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Sample records for svojstva plenok cdte

  1. Utjecaj veličine čestica na svojstva tečenja granulata

    OpenAIRE

    Posavec, Jelena

    2017-01-01

    U farmaceutskoj industriji veliki udio sirovina je u obliku smjese prašaka različitih veličina i oblika te gustoće čestica. Ova svojstva prvenstveno utječu na pakiranje čestica, poroznost, homogenost, nasipnu gustoću i raslojavanje smjese prašaka te određuju reologiju praškastih smjesa. Reološka svojstva su ključna za većinu procesa u proizvodnji čvrstih ljekovitih oblika. Veličina čestica je svojstvo koje utječe na tečenje zbog pojave adhezivnosti/kohezivnosti, osim toga utječe na kemijska i...

  2. Utjecaj različitih vrsta soli na proizvodni kalo i fizikalno-kemijska svojstva Slavonske šunke

    OpenAIRE

    Kovačević, Dragan; Mastanjević, Krešimir; Kušurin, Iva

    2017-01-01

    Cilj rada je bio istražiti utjecaj različitih vrsta soli (sitne kamene i krupne morske) na proizvodni kalo i fizikalno-kemijska svojstva (masene udjele vode, masti, proteina, soli te pH vrijednost i aw) Slavonske šunke tijekom 238 dana proizvodnje. Tijekom tradicionalnog postupka proizvodnje, kontinuirano je svakih 7 dana praćen proizvodni kalo, dok su fizikalno-kemijska svojstva određena na početku proizvodnje (1. dan), na kraju procesa soljenja (28. dan) te na kraju proizvodnje (238. dan). ...

  3. Struktura i svojstva plazma sprej Aps - Nikal - Aluminid prevlake

    Directory of Open Access Journals (Sweden)

    Mihailo Rade Mrdak

    2013-06-01

    ženi povišenim i visokim temperaturama (Liu, White, 1985, pp.365-371, (Cahn, 1991, pp.18-25, (Chen, et al., 1993, pp.357-363, (Liu, Sikka, 1986, pp.13-16. Konkretno, ove prevlake imaju potencijalnu tražnju u avio-industriji i drugim industrijskim granama visokih performansi (Chen, et al., 1993, pp.357-363, (Liu, Sikka, 1986, pp.13-16. Ni20Al prevlaka tipično se koristi kao vezni sloj da poboljša adheziju naknadno deponovanog gornjeg sloja, kao srednji sloj za ublažavanje neusklađenosti materijala sa različitim koeficijentima termičkog širenja, kao oksidaciono otporan vezni sloj za radne temperature do 650°C, za zaštitu i revitalizaciju delova uzrokovanih habanjem, oksidacijom i vibracijama. Da bi se dobio funkcionalni sloj neophodno je pažljivo odabrati kombinaciju plazma sprej parametara. Jedan od bitnih atmosferski plazma sprej parametara je plazma sprej odstojanje koje znatno utiče na oksidaciju istopljenih čestica u toku deponovanja na podlogu i na veličinu i sadržaj pora. Prevlake deponovane sa optimalnim parametrima su guste sa metalurškom vezom na interfejsu sa osnovnim materijalom. Prah Ni20Al deponovan plazma sprej postupkom na atmosferskom pritisku proizvodi lamelarne prevlake, koje se sastoje od čvrstog rastvora  α-Ni u kojem se nalaze faze γ'-Ni3Al i u tragovima faza NiAl (Knotek, Lugscheider, 1976, pp.244-251, (Knotek, et al., 1980, pp. 282-286. Po dvojnom dijagramu Ni-Al, faza γ'-Ni3Al  se gradi sa  sadržajem aluminijuma od 12,5-14 tež.%Al, a faza NiAl sa  sadržajem aluminijuma preko 17 tež.%Al (ASM Handbook, 1992. Između lamela osnove na međugranicama se nalaze oksidi  NiO i γ -Al2O3 i pore. U ovom radu prikazani su rezultati eksperimentalnih istraživanja uticaja plazma sprej odstojanja (PS na mikrostrukturu i mehanička svojstva slojeva prevlake Ni20Al. Glavni cilj je bio da se prevlaka primeni na utvrđivaču  turbo- gasnog  motora GTD 2PV8 na radarskoj stanici. Urađene su tri grupe uzoraka sa tri različita plazma sprej

  4. Svojstva i struktura wolframkarbid-kobalt prevlake deponovane plazma-sprej postupkom

    Directory of Open Access Journals (Sweden)

    Mihailo Rade Mrdak

    2013-10-01

    radu predstavljeni su rezultati eksperimentalnih istraživanja uticaja protoka plazma gasa (He na mehanička svojstva i mikrostrukturu slojeva WC17Co. Glavni cilj je bio da se stara tehnologija cementacije  rukavaca vratila zameni deponovanjem WC17Co prevlake plazma-sprej tehnologijom. Analizirane su mehaničke karakteristike i mikrostrukture prevlaka da bi se odabrala prevlaka najboljih karakteristika. Prevlaka sa najboljim mehaničkim i strukturnim karakteristikama je testirana i homologovana na rukavcu vratila glavnog rotora helikoptera "gazela H42" letnim ispitivanjem u trajanju od 50 časova u VZ „Moma Stanojlović" u Batajnici. Materijali za ispitivanje i uzorci Za izradu prevlaka upotrebljen je prah firme „Sulzer Metco” sa oznakom Metco 73F-NS-1. Za izradu praha korišćena je tehnika suvo  raspršavanje/sinterovanje sa sadržajem od 83 tež.%WC i 17 tež.%Co. Prah koji se koristio u eksperimentu imao je raspon granulacije od 11 µm do 53 µm (Material Product Data Sheet, 2011. Čestice praha su porozne  i sfernog oblika. Osnove na koje su deponovane prevlake za procenu strukture i za ispitivanje mikrotvrdoće izrađene su od čelika Č.4171 (X15Cr13 EN10027 u termički neobrađenom stanju dimenzija 70x20x1,5mm . Osnove za ispitivanje čvrstoće spoja takođe su izrađene od čelika Č.4171(X15Cr13EN10027 u termički neobrađenom stanju dimenzija Ø25x50 mm (Turbojet engine-standard practices manuel TURBOMECA. Mehaničke karakterizacije prevlaka WC17Co urađene su prema standardu TURBOMECA (Turbojet engine-standard practices manuel TURBOMECA. Za merenje mikrotvrdoće i metalografska ispitivanja korišćeni su uzorci dimanzija 70 × 20 x 1,5 mm, dok su za ispitivanje zatezne čvrstoće korišćeni uzorci  Ø25 x 50 mm. Merenja mikrotvrdoća izvršena su korišćenjem Vikers dijamant piramide indenter i 300 grama opterećenje (HV0.3. Merenje je urađeno u pravcu duž lamela, u sredini i na krajevima uzorka. Na tri mesta sprovedeno je pet očitavanja, a

  5. CdTe devices and method of manufacturing same

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, Timothy A.; Noufi, Rommel; Dhere, Ramesh G.; Albin, David S.; Barnes, Teresa; Burst, James; Duenow, Joel N.; Reese, Matthew

    2015-09-29

    A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

  6. Surface passivation for CdTe devices

    Energy Technology Data Exchange (ETDEWEB)

    Reese, Matthew O.; Perkins, Craig L.; Burst, James M.; Gessert, Timothy A.; Barnes, Teresa M.; Metzger, Wyatt K.

    2017-08-01

    In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

  7. Recycling of CdTe photovoltaic waste

    Science.gov (United States)

    Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

    1999-01-01

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate and electrolyzing the leachate to separate Cd from Te, wherein the Te is deposits onto a cathode while the Cd remains in solution.

  8. Characterization and photoluminescence studies of CdTe ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. The major objective of this work was to detect the change of photoluminescence (PL) intensity of. CdTe nanoparticles (NPs) before and after transfer from liquid phase to polystyrene (PS) matrix by electro- spinning technique. Thio-stabilized CdTe NPs were first synthesized in aqueous, then enwrapped by cetyl-.

  9. Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

    2015-01-15

    The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

  10. SYNTHESIS AND CHARACTERIZATION OF CdTe QUANTUM ...

    African Journals Online (AJOL)

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    ABSTRACT. L-Cysteine (Cys)-capped CdTe quantum dots (QDs) were prepared when sodium tellurite worked as a tellurium source and sodium borohydride acted as a reductant. The influences of various experimental variables, including pH values, Cd/Te and Cd/Cys molar ratios, on the photoluminescence (PL) quantum ...

  11. CdTe ambulatory ventricular function monitor

    International Nuclear Information System (INIS)

    Lazewatsky, J.L.; Alpert, N.M.; Moore, R.H.; Boucher, C.A.; Strauss, H.W.

    1979-01-01

    A prototype device consisting of two arrays of CdTe detectors, ECG amplifiers and gate, microprocessor, and tape recorder was devised to record simultaneous ECG and radionuclide blood pool data from the left ventricle for extended periods during normal activity. The device is intended to record information concerning both normal and abnormal physiology of the heart and to permit the evaluation of new pharmaceuticals under everyday conditions. Preliminary results indicate that the device is capable of recording and reading out data from both phantoms and patients

  12. Process Development for High Voc CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, C. S.; Morel, D. L.

    2011-05-01

    This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

  13. Growth of CdTe: Al films; Crecimiento de peliculas de CdTe: Al

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez A, M.; Zapata T, M. [CICATA-IPN, 89600 Altamira, Tamaulipas (Mexico); Melendez L, M. [CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico); Pena, J.L. [CINVESTAV-IPN, A.P. 73 Cordemex, 97310 Merida, Yucatan (Mexico)

    2006-07-01

    CdTe: AI films were grown by the close space vapor transport technique combined with free evaporation (CSVT-FE). The Aluminum (Al) evaporation was made by two kinds of sources: one made of graphite and the other of tantalum. The films were deposited on glass substrates. The Al source temperature was varied maintaining the CdTe source temperature fixed as well as the substrate temperature. The films were characterized by x-ray energy dispersive analysis (EDAX), x-ray diffraction and optical transmission. The results showed for the films grown with the graphite source for Al evaporation, the Al did not incorporate in the CdTe matrix, at least to the level of EDAX sensitivity; they maintained the same crystal structure and band gap. For the samples grown with the tantalum source, we were able to incorporate the Al. The x-ray diffraction patterns show that the films have a crystal structure that depends on Al concentration. They were cubic up to 2.16 at. % Al concentration; for 19.65 at. % we found a mixed phase; for Al concentration higher than 21 at. % the films were amorphous. For samples with cubic structure it was found that the lattice parameter decreases and the band gap increases with Al concentration. (Author)

  14. Characterization and photoluminescence studies of CdTe ...

    Indian Academy of Sciences (India)

    SEM) and transmission electron microscope (TEM) to observe their morphology and distribution, respectively. The selective area electronic diffraction (SAED) pattern proved that the CdTe NPs were cubic lattice. The PL spectrum indicated that ...

  15. Interaction of porphyrins with CdTe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei, E-mail: weichen@uta.edu [Department of Physics, University of Texas at Arlington, Box 19059 Arlington, TX 76019 (United States)

    2011-05-13

    Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

  16. Interaction of porphyrins with CdTe quantum dots

    International Nuclear Information System (INIS)

    Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei

    2011-01-01

    Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

  17. CdTe Photovoltaics for Sustainable Electricity Generation

    Science.gov (United States)

    Munshi, Amit; Sampath, Walajabad

    2016-09-01

    Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1- x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

  18. Multisegment CdTe nanowire homojunction photodiode

    International Nuclear Information System (INIS)

    Matei, Elena; Enculescu, Ionut; Ion, Lucian; Antohe, Stefan; Neumann, Reinhard

    2010-01-01

    Electrochemical deposition in nanoporous ion track membranes is used for the preparation of multisegment CdTe-homojunction diode nanowires. Our study is based on the fact that the deposition overpotential strongly influences the composition of the compound semiconductor nanowires. Therefore, the transport behavior of the nanowire devices can be tailored by appropriately choosing a certain sequence of electrodeposition potentials. The wires were characterized using scanning electron microscopy, energy dispersive x-ray analysis, optical spectroscopy and x-ray diffraction. The current-voltage characteristics measured prove that, by appropriately choosing the voltage pulse pattern, one can fabricate nanowires with ohmic or rectifying behavior. The semiconducting nanowires are sensitive to light, their spectral sensitivity being characteristic of CdTe. The preparation of functional nanostructures in such a simple approach provides, as a major advantage, an increase in the process reproducibility and opens a wide field of potential optoelectronic applications.

  19. Aqueous synthesis of CdTe at FeOOH and CdTe at Ni(OH)2 composited nanoparticles

    International Nuclear Information System (INIS)

    Li Liang; Ren Jicun

    2006-01-01

    Two kinds of bi-functional nanomaterials, CdTe at FeOOH and CdTe at Ni(OH) 2 , were synthesized in water phase. In the synthesis, using the luminescent CdTe nanocrystals (NCs) as a core, Fe 3+ (Ni 2+ ) was added to CdTe NCs aqueous solution and slowly hydrolyzed to deposit a layer of hydroxide onto the luminescent CdTe NCs in the presence of stabilizer. TEM, XRD, XPS, UV, fluorescence spectrometer and physical property measurement system (PPMS) were used to characterize the final products, and the results showed that the as-prepared nanoparticles with core/shell structure exhibited certain magnetic properties and fluorescence. - Graphical abstract: Fluorescent and magnetic bi-functional CdTe at FeOOH and CdTe at Ni(OH) 2 nanoparticles were prepared by seed-mediated approach in water phase

  20. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    Directory of Open Access Journals (Sweden)

    Wagner Anacleto Pinheiro

    2006-03-01

    Full Text Available Unlike other thin film deposition techniques, close spaced sublimation (CSS requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate and a sintered CdTe powder. In this work, CdTe thin films were deposited by CSS technique from different CdTe sources: particles, powder, compact powder, a paste made of CdTe and propylene glycol and source-plates (CdTe/Mo and CdTe/glass. The largest deposition rate was achieved when a paste made of CdTe and propylene glycol was used as the source. CdTe source-plates led to lower rates, probably due to the poor heat transmission, caused by the introduction of the plate substrate. The results also showed that compacting the powder the deposition rate increases due to the better thermal contact between powder particles.

  1. A facile route to shape controlled CdTe nanoparticles

    International Nuclear Information System (INIS)

    Mntungwa, Nhlakanipho; Rajasekhar, Pullabhotla V.S.R.; Revaprasadu, Neerish

    2011-01-01

    Research highlights: → A facile hybrid solution based/thermolysis route has been used for the synthesis of hexadecylamine capped CdTe nanoparticles. → This method involves the reaction by the addition of an aqueous suspension of a cadmium salt to a freshly prepared NaHTe solution. → The cadmium salt plays an important role in the growth mechanism of the particles and hence its final morphology. - Abstract: Hexadecylamine (HDA) capped CdTe nanoparticles have been synthesized using a facile hybrid solution based/thermolysis route. This method involves the reaction by the addition of an aqueous suspension or solution of a cadmium salt (chloride, acetate, nitrate or carbonate) to a freshly prepared NaHTe solution. The isolated CdTe was then dispersed in tri-octylphosphine (TOP) and injected into pre-heated HDA at temperatures of 190, 230 and 270 deg. C for 2 h. The particle growth and size distribution of the CdTe particles synthesized using cadmium chloride as the cadmium source were monitored using absorption and photoluminescence spectroscopy. The final morphology of the CdTe nanoparticles synthesized from the various cadmium sources was studied by transmission electron microscopy (TEM) and high resolution TEM. The cadmium source has an influence on the final morphology of the particles.

  2. Advances in CdTe R&D at NREL

    Energy Technology Data Exchange (ETDEWEB)

    Wu, X.; Zhou, J.; Keane, J. C.; Dhere, R. G.; Albin, D. S.; Gessert, T. A.; DeHart, C.; Duda, A.; Ward, J. J.; Yan, Y.; Teeter, G.; Levi, D. H.; Asher, S.; Perkins, C.; Moutinho, H. R.; To, B.

    2005-11-01

    This paper summarizes the following R&D accomplishments at National Renewable Energy Laboratory (NREL): (1) Developed several novel materials and world-record high-efficiency CdTe solar cell, (2) Developed "one heat-up step" manufacturing processes, and (3) Demonstrated 13.9% transparent CdTe cell and 15.3% CdTe/CIS polycrystalline tandem solar cell. Cadmium telluride has been well recognized as a promising photovoltaic material for thin-film solar cells because of its near-optimum bandgap of ~1.5 eV and its high absorption coefficient. Impressive results have been achieved in the past few years for polycrystalline CdTe thin-film solar cells at NREL. In this paper, we summarize some recent R&D activities at NREL.

  3. Applications of CdTe to nuclear medicine. Final report

    International Nuclear Information System (INIS)

    Entine, G.

    1985-01-01

    Uses of cadmium telluride (CdTe) nuclear detectors in medicine are briefly described. They include surgical probes and a system for measuring cerebral blood flow in the intensive care unit. Other uses include nuclear dentistry, x-ray exposure control, cardiology, diabetes, and the testing of new pharmaceuticals

  4. Fractal features of CdTe thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hosseinpanahi, Fayegh, E-mail: f.hosseinpanahi@yahoo.com [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Raoufi, Davood [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of); Ranjbarghanei, Khadijeh [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Karimi, Bayan [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Babaei, Reza [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Hasani, Ebrahim [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of)

    2015-12-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  5. Fractal features of CdTe thin films grown by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

    2015-01-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  6. Characterization of CdTe Films Deposited at Various Bath Temperatures and Concentrations Using Electrophoretic Deposition

    Directory of Open Access Journals (Sweden)

    Zulkarnain Zainal

    2012-05-01

    Full Text Available CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111 orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the CdTe film increased with the increase of CdTe concentration. The optical energy band gap of film decreased with the increase of CdTe concentration, and with the increase of isothermal bath temperature. The film thickness increased with respect to the increase of CdTe concentration and bath temperature, and following, the numerical expression for the film thickness with respect to these two variables has been established.

  7. Fabrication of CdTe quantum dots-apoferritin arrays for detection of dopamine

    Science.gov (United States)

    Le, Thi Hoa; Kim, Ji Hyeon; Park, Sang Joon

    2017-06-01

    A method was proposed for detecting dopamine using a two-dimensional CdTe quantum dots (QDs)-apoferritin array fabricated on a modified silicon (Si) surface. First, CdTe QDs were synthesized in the cavity of horse spleen apoferritin (HsAFr). Then, the characterization of CdTe QDs in apoferritin was performed using photoluminescence (PL) spectroscopy. Transmission electron microscopy was used to analyze the size and structure of CdTe QDs. An atomic force microscopy image was obtained to evaluate the topography of the Si surface. In addition, the PL change resulting from the conjugation reaction of the CdTe QDs-apoferritin array with dopamine was investigated. When the array was linked to dopamine, a significant quenching of fluorescence was observed. Accordingly, the CdTe QDs-apoferritin arrays could be employed as useful sensing media for dopamine detection.

  8. Luminescence effects of ion-beam bombardment of CdTe surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Olvera, J., E-mail: javier.olvera@uam.e [Laboratorio de Crecimiento de Cristales, Dpto. de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Martinez, O. [Optronlab Group, Dpto. Fisica Materia Condensada, Edificio I-D, Universidad de Valladolid, Paseo de Belen 1, 47011 Valladolid (Spain); Plaza, J.L.; Dieguez, E. [Laboratorio de Crecimiento de Cristales, Dpto. de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain)

    2009-09-15

    In the present work, we report the effect of low-energy ion bombardment on CdTe surfaces. The effect is revealed by FESEM images and photoluminescence (PL) measurements carried out before and after irradiation of CdTe polycrystals by means of an ion-beam sputtering (IBS) system. An important improvement in the luminescence of CdTe was observed in the irradiated areas, related to defect-free surfaces.

  9. CdTe polycrystalline films on Ni foil substrates by screen printing and their photoelectric performance

    International Nuclear Information System (INIS)

    Yao, Huizhen; Ma, Jinwen; Mu, Yannan; Su, Shi; Lv, Pin; Zhang, Xiaoling; Zhou, Liying; Li, Xue; Liu, Li; Fu, Wuyou; Yang, Haibin

    2015-01-01

    Highlights: • The sintered CdTe polycrystalline films by a simple screen printing. • The flexible Ni foil was chose as substrates to reduce the weight of the electrode. • The compact CdTe film was obtained at 550 °C sintering temperature. • The photoelectric activity of the CdTe polycrystalline films was excellent. - Abstract: CdTe polycrystalline films were prepared on flexible Ni foil substrates by sequential screen printing and sintering in a nitrogen atmosphere for the first time. The effect of temperature on the quality of the screen-printed film was investigated in our work. The high-quality CdTe films were obtained after sintering at 550 °C for 2 h. The properties of the sintered CdTe films were characterized by scanning electron microscopy, X-ray diffraction pattern and UV–visible spectroscopy. The high-quality CdTe films have the photocurrent was 2.04 mA/cm 2 , which is higher than that of samples prepared at other temperatures. Furthermore, CdCl 2 treatment reduced the band gap of the CdTe film due to the larger grain size. The photocurrent of photoelectrode based on high crystalline CdTe polycrystalline films after CdCl 2 treatment improved to 2.97 mA/cm 2 , indicating a potential application in photovoltaic devices

  10. Advanced processing of CdTe pixel radiation detectors

    Science.gov (United States)

    Gädda, A.; Winkler, A.; Ott, J.; Härkönen, J.; Karadzhinova-Ferrer, A.; Koponen, P.; Luukka, P.; Tikkanen, J.; Vähänen, S.

    2017-12-01

    We report a fabrication process of pixel detectors made of bulk cadmium telluride (CdTe) crystals. Prior to processing, the quality and defect density in CdTe material was characterized by infrared (IR) spectroscopy. The semiconductor detector and Flip-Chip (FC) interconnection processing was carried out in the clean room premises of Micronova Nanofabrication Centre in Espoo, Finland. The chip scale processes consist of the aluminum oxide (Al2O3) low temperature thermal Atomic Layer Deposition (ALD), titanium tungsten (TiW) metal sputtering depositions and an electroless Nickel growth. CdTe crystals with the size of 10×10×0.5 mm3 were patterned with several photo-lithography techniques. In this study, gold (Au) was chosen as the material for the wettable Under Bump Metalization (UBM) pads. Indium (In) based solder bumps were grown on PSI46dig read out chips (ROC) having 4160 pixels within an area of 1 cm2. CdTe sensor and ROC were hybridized using a low temperature flip-chip (FC) interconnection technique. The In-Au cold weld bonding connections were successfully connecting both elements. After the processing the detector packages were wire bonded into associated read out electronics. The pixel detectors were tested at the premises of Finnish Radiation Safety Authority (STUK). During the measurement campaign, the modules were tested by exposure to a 137Cs source of 1.5 TBq for 8 minutes. We detected at the room temperature a photopeak at 662 keV with about 2 % energy resolution.

  11. Optimizing timing performance of CdTe detectors for PET

    Science.gov (United States)

    Nakhostin, M.

    2017-10-01

    Despite several attractive properties, the poor timing performance of compound semiconductor detectors such as CdTe and CdZnTe has hindered their use in commercial PET imaging systems. The standard method of pulse timing with such detectors is to employ a constant-fraction discriminator at the output of a timing filter which is fed by the pulses from a charge-sensitive preamplifier. The method has led to a time resolution of about 10 ns at full-width at half-maximum (FWHM) with 1 mm thick CdTe detectors. This paper presents a detailed investigation on the parameters limiting the timing performance of Ohmic contact planar CdTe detectors with the standard pulse timing method. The jitter and time-walk errors are studied through simulation and experimental measurements and it is revealed that the best timing results obtained with the standard timing method suffer from a significant loss of coincidence events (~50%). In order to improve the performance of the detectors with full detection efficiency, a new digital pulse timing method based on a simple pattern recognition technique was developed. A time resolution of 3.29  ±  0.10 ns (FWHM) in the energy range of 300-650 keV was achieved with an Ohmic contact planar CdTe detector (5  ×  5  ×  1 mm3). The digital pulse processing method was also used to correct for the charge-trapping effect and an improvement in the energy resolution from 4.83  ±  0.66% to 2.780  ±  0.002% (FWHM) at 511 keV was achieved. Further improvement of time resolution through a moderate cooling of the detector and the application of the method to other detector structures are also discussed.

  12. Characterization and photoluminescence studies of CdTe ...

    Indian Academy of Sciences (India)

    Administrator

    (PS), an inert polymer, is utilized in many research works. Then, it may be an attractive topic to disperse. CdTe NPs into PS matrix in order to generate a novel ... The CdTe/PS mixture was filled to an acutilingual glass tube wrapped with copper wire, which was con- nected with a 12 kV positive d.c. A grounded aluminum.

  13. Metastability and reliability of CdTe solar cells

    Science.gov (United States)

    Guo, Da; Brinkman, Daniel; Shaik, Abdul R.; Ringhofer, Christian; Vasileska, Dragica

    2018-04-01

    Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers devote significant empirical efforts to study these phenomena and to improve semiconductor device stability. Still, understanding the underlying reasons of these instabilities remains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most commonly alleged causes of metastability in CdTe devices, such as ‘migration of Cu’, have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses suggesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe provide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic defects; for example, changing the state of an impurity from an interstitial donor to a substitutional acceptor often is accompanied by generation of a compensating intrinsic interstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the electrical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of temporal

  14. Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Gaire, C.; Rao, S.; Riley, M.; Chen, L.; Goyal, A.; Lee, S.; Bhat, I.; Lu, T.-M.; Wang, G.-C.

    2012-01-01

    Single crystal-like CdTe thin film has been grown by metalorganic chemical vapor deposition on cube-textured Ni(100) substrate. Using X-ray pole figure measurements we observed the epitaxial relationship of {111} CdTe //{001} Ni with [11 ¯ 0] CdTe //[010] Ni and [112 ¯ ] CdTe //[100] Ni . The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 1.6% in the [11 ¯ 0] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction images show that the CdTe domains are 30° oriented from each other. These high structural quality films may find applications in low cost optoelectronic devices.

  15. Approaches to improve the Voc of CDTE devices: Device modeling and thinner devices, alternative back contacts

    Science.gov (United States)

    Walkons, Curtis J.

    An existing commercial process to develop thin film CdTe superstrate cells with a lifetime tau=1-3 ns results in Voc= 810-850 mV which is 350 mV lower than expected for CdTe with a bandgap EG = 1.5 eV. Voc is limited by 1.) SRH recombination in the space charge region; and 2.) the Cu2Te back contact to CdTe, which, assuming a 0.3 eV CdTe/Cu2Te barrier, exhibits a work function of phi Cu2Te= 5.5 eV compared to the CdTe valence band of Ev,CdTe=5.8 eV. Proposed solutions to develop CdTe devices with increased Voc are: 1.) reduce SRH recombination by thinning the CdTe layer to ≤ 1 mum; and 2.) develop an ohmic contact back contact using a material with phi BC≥5.8 eV. This is consistent with simulations using 1DSCAPS modeling of CdTe/CdS superstrate cells under AM 1.5 conditions. Two types of CdTe devices are presented. The first type of CdTe device utilizes a window/CdTe stack device with an initial 3-9 mum CdTe layer which is then chemically thinned resulting in regions of the CdTe film with thickness less than 1 mum. The CdTe surface was contacted with a liquid junction quinhydrone-Pt (QH-Pt) probe which enables rapid repeatable Voc measurements on CdTe before and after thinning. In four separate experiments, the window/CdTe stack devices with thinned CdTe exhibited a Voc increase of 30-170 mV, which if implemented using a solid state contact could cut the Voc deficit in half. The second type of CdTe device utilizes C61 PCBM as a back contact to the CdTe, selected since PCBM has a valence band maximum energy (VBM) of 5.8 eV. The PCBM films were grown by two different chemistries and the characterization of the film properties and device results are discussed. The device results show that PCBM exhibits a blocking contact with a 0.6 eV Schottky barrier and possible work function of phiPCBM = 5.2 eV.

  16. Modeling of Copper Migration In CdTe Photovoltaic Devices

    Science.gov (United States)

    Guo, Da

    Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. The most commonly alleged causes of instability in CdTe device, such as "migration of Cu," have been investigated rigorously over the past fifteen years. As all defects, intrinsic or extrinsic, interact with the electrical potential and free carriers so that charged defects may drift in the electric field and changing ionization state with excess free carriers. Such complexity of interactions in CdTe makes understanding of temporal changes in device performance even more challenging. The goal of the work in this dissertation is, thus, to eliminate the ambiguity between the observed performance changes under stress and their physical root cause by enabling a depth of modeling that takes account of diffusion and drift at the atomistic level coupled to the electronic subsystem responsible for a PV device's function. The 1D Unified Solver, developed as part of this effort, enables us to analyze PV devices at a greater depth. In this dissertation, the implementation of a drift-diffusion model defect migration simulator, development of an implicit reaction scheme for total mass conservation, and a couple of other numerical schemes to improve the overall flexibility and robustness of this coupled Unified Solver is discussed. Preliminary results on Cu (with or without Cl-treatment) annealing simulations in both single-crystal CdTe wafer and poly-crystalline CdTe devices show promising agreement to experimental findings, providing a new perspective in the research of improving doping concentration hence the open-circuit voltage of CdTe technology. Furthermore, on the reliability side, in agreement of previous experimental reports, simulation results suggest possibility of Cu depletion in short-circuited cells stressed at elevated temperature

  17. CDTE alloys and their application for increasing solar cell performance

    Science.gov (United States)

    Swanson, Drew E.

    Cadmium Telluride (CdTe) thin film solar is the largest manufactured solar cell technology in the United States and is responsible for one of the lowest costs of utility scale solar electricity at a purchase agreement of $0.0387/kWh. However, this cost could be further reduced by increasing the cell efficiency. To bridge the gap between the high efficiency technology and low cost manufacturing, a research and development tool and process was built and tested. This fully automated single vacuum PV manufacturing tool utilizes multiple inline close space sublimation (CSS) sources with automated substrate control. This maintains the proven scalability of the CSS technology and CSS source design but with the added versatility of independent substrate motion. This combination of a scalable deposition technology with increased cell fabrication flexibility has allowed for high efficiency cells to be manufactured and studied. The record efficiency of CdTe solar cells is lower than fundamental limitations due to a significant deficit in voltage. It has been modeled that there are two potential methods of decreasing this voltage deficiency. The first method is the incorporation of a high band gap film at the back contact to induce a conduction-band barrier that can reduce recombination by reflecting electrons from the back surface. The addition of a Cd1-x MgxTe (CMT) layer at the back of a CdTe solar cell should induce this desired offset and reflect both photoelectrons and forward-current electrons away from the rear surface. Higher collection of photoelectrons will increase the cells current and the reduction of forward current will increase the cells voltage. To have the optimal effect, CdTe must have reasonable carrier lifetimes and be fully depleted. To achieve this experimentally, CdTe layers have been grown sufficiently thin to help produce a fully depleted cell. A variety of measurements including performance curves, transmission electron microscopy, x

  18. Narrowing the size distribution of CdTe nanocrystals using digestive ...

    Indian Academy of Sciences (India)

    2015-06-02

    Jun 2, 2015 ... 2.2 Synthesis of CdTe NCs. CdTe NCs were ... Asymmetric. 2.4 Effect of refluxing time on digestive ripening. To get the control on NCs size and size distribution, digestive ripening is performed using the ... 2 h, distribution of luminescence spectrum become asymmetrical and FWHM increases which limits ...

  19. Evaluation of a miniature CdTe detector for monitoring left ventricular function.

    Science.gov (United States)

    Harrison, K S; Liu, X; Han, S T; Camargo, E E; Wagner, H N

    1982-01-01

    A miniature CdTe probe interfaced to a microcomputer was used to measure left ventricular ejection fraction (LVEF) in 25 patients. LVEF obtained with the CdTe module, in the beat-to-beat mode, or the integrated gated mode agreed well with LVEF obtained with a gamma camera (r = 0.80; r = 0.82 respectively). Similarly, LVEF by CdTe probe agreed with LVEF obtained by gated equilibrium studies performed with a computerized NaI probe. The CdTe probe can provide comparable measurement of LVEF at a fraction of the cost of a camera-computer system and, being small and lightweight, the CdTe probe is adaptable for monitoring patients in intensive care facilities.

  20. Applications of CdTe to nuclear medicine. Annual report, February 1, 1978-January 31, 1979

    International Nuclear Information System (INIS)

    Entine, G.

    1979-01-01

    The use of CdTe radiation detectors in medical applications continues to become more widespread. During this contract period a CdTe detector as small as 1 mm 3 was inserted into a bronchoscope while a CdTe array as large as 4200 mm 3 was used as a prototype gamma camera. Portable battery powered instrumentation was also developed to further enhance the versatility of the CdTe concept. One of these electronic packages which is used in several hospitals is illustrated. The unit provides an LED digital readout and timing circuits to vary the measuring time between 1 and 500 seconds. The total weight is below 0.6 g. The units have been used with several specialized CdTe probes including a plutonium wound probe, a nuclear dentistry probe, an implantible heart probe and an I-125 Fibrinigen sensor. These special probes are also illustrated

  1. Design Strategies for High-Efficiency CdTe Solar Cells

    Science.gov (United States)

    Song, Tao

    With continuous technology advances over the past years, CdTe solar cells have surged to be a leading contributor in thin-film photovoltaic (PV) field. While empirical material and device optimization has led to considerable progress, further device optimization requires accurate device models that are able to provide an in-depth understanding of CdTe device physics. Consequently, this thesis is intended to develop a comprehensive model system for high-efficiency CdTe devices through applying basic design principles of solar cells with numerical modeling and comparing results with experimental CdTe devices. The CdTe absorber is central to cell performance. Numerical simulation has shown the feasibility of high energy-conversion efficiency, which requires both high carrier density and long minority carrier lifetime. As the minority carrier lifetime increases, the carrier recombination at the back surface becomes a limitation for cell performance with absorber thickness concentration. (Abstract shortened by ProQuest.).

  2. Synthesis and characterization of high-ordered CdTe nanorods

    Science.gov (United States)

    Ma, Ligang; Wei, Zelu; Zhang, Fengming; Wu, Xiaoshan

    2015-12-01

    Cadmium telluride (CdTe) materials are an important absorbed layer and development solar energy conversion devices based on nano-fabrication techniques have attracted considerable interest in fabricating optoelectronic devices. Herein, through close-space sublimation method, vertically high-aligned CdTe nanorods are successfully obtained for the first time, with the help of Anodic Aluminum Oxide (AAO) template, which can perfectly control the morphology, diameter, and spacing among the CdTe nanorods. Its the crystal structure and optical properties are characterized by X-ray diffraction, X-ray photoelectron spectroscopy, Raman scattering, and photoluminescence. The results indicate that CdTe nanorods are textured polycrystalline with the cubic phase and bear good crystallinity. In addition, this deposition technique is a clean, inexpensive, high-throughput, versatile and reproducible for obtaining vertically aligned CdTe nanorod, which shows the potential applications in the future for the preparation of CdTe-based nanostructure solar cells.

  3. Translocation and neurotoxicity of CdTe quantum dots in RMEs motor neurons in nematode Caenorhabditis elegans

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yunli; Wang, Xiong; Wu, Qiuli; Li, Yiping; Wang, Dayong, E-mail: dayongw@seu.edu.cn

    2015-02-11

    Graphical abstract: - Highlights: • We investigated in vivo neurotoxicity of CdTe QDs on RMEs motor neurons in C. elegans. • CdTe QDs in the range of μg/L caused neurotoxicity on RMEs motor neurons. • Bioavailability of CdTe QDs may be the primary inducer for CdTe QDs neurotoxicity. • Both oxidative stress and cell identity regulate the CdTe QDs neurotoxicity. • CdTe QDs were translocated and deposited into RMEs motor neurons. - Abstract: We employed Caenorhabditis elegans assay system to investigate in vivo neurotoxicity of CdTe quantum dots (QDs) on RMEs motor neurons, which are involved in controlling foraging behavior, and the underlying mechanism of such neurotoxicity. After prolonged exposure to 0.1–1 μg/L of CdTe QDs, abnormal foraging behavior and deficits in development of RMEs motor neurons were observed. The observed neurotoxicity from CdTe QDs on RMEs motor neurons might be not due to released Cd{sup 2+}. Overexpression of genes encoding Mn-SODs or unc-30 gene controlling cell identity of RMEs neurons prevented neurotoxic effects of CdTe QDs on RMEs motor neurons, suggesting the crucial roles of oxidative stress and cell identity in regulating CdTe QDs neurotoxicity. In nematodes, CdTe QDs could be translocated through intestinal barrier and be deposited in RMEs motor neurons. In contrast, CdTe@ZnS QDs could not be translocated into RMEs motor neurons and therefore, could only moderately accumulated in intestinal cells, suggesting that ZnS coating might reduce neurotoxicity of CdTe QDs on RMEs motor neurons. Therefore, the combinational effects of oxidative stress, cell identity, and bioavailability may contribute greatly to the mechanism of CdTe QDs neurotoxicity on RMEs motor neurons. Our results provide insights into understanding the potential risks of CdTe QDs on the development and function of nervous systems in animals.

  4. Magnetic circular dichroism of CdTe nanoparticles

    Science.gov (United States)

    Malakhovskii, A. V.; Sokolov, A. E.; Tsipotan, A. S.; Zharkov, S. M.; Zabluda, V. N.

    2018-04-01

    Magnetic circular dichroism (MCD) of water-soluble CdTe nanoparticles was observed in the visible spectral range for the first time. Diameter of nanoparticles varied from 2.3 to 4.5 nm. Absorption and photoluminescence spectra were also recorded. Absorption line at 19400 cm-1 and luminescent line at 18200 cm-1 were observed. Splitting of value 960 cm-1 was revealed in the MCD spectrum. Approximately the same splitting was extracted from the absorption spectrum. The MCD was identified as the temperature independent paramagnetic mixing effect. Nature of the absorption line and of its splitting are discussed.

  5. High-Efficiency, Commercial Ready CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Sites, James R. [Colorado State Univ., Fort Collins, CO (United States)

    2015-11-19

    Colorado State’s F-PACE project explored several ways to increase the efficiency of CdTe solar cells and to better understand the device physics of those cells under study. Increases in voltage, current, and fill factor resulted in efficiencies above 17%. The three project tasks and additional studies are described in detail in the final report. Most cells studied were fabricated at Colorado State using an industry-compatible single-vacuum closed-space-sublimation (CSS) chamber for deposition of the key semiconductor layers. Additionally, some cells were supplied by First Solar for comparison purposes, and a small number of modules were supplied by Abound Solar.

  6. Doping of polycrystalline CdTe for high-efficiency solar cells on flexible metal foil

    Science.gov (United States)

    Kranz, Lukas; Gretener, Christina; Perrenoud, Julian; Schmitt, Rafael; Pianezzi, Fabian; La Mattina, Fabio; Blösch, Patrick; Cheah, Erik; Chirilă, Adrian; Fella, Carolin M.; Hagendorfer, Harald; Jäger, Timo; Nishiwaki, Shiro; Uhl, Alexander R.; Buecheler, Stephan; Tiwari, Ayodhya N.

    2013-08-01

    Roll-to-roll manufacturing of CdTe solar cells on flexible metal foil substrates is one of the most attractive options for low-cost photovoltaic module production. However, various efforts to grow CdTe solar cells on metal foil have resulted in low efficiencies. This is caused by the fact that the conventional device structure must be inverted, which imposes severe restrictions on device processing and consequently limits the electronic quality of the CdTe layer. Here we introduce an innovative concept for the controlled doping of the CdTe layer in the inverted device structure by means of evaporation of sub-monolayer amounts of Cu and subsequent annealing, which enables breakthrough efficiencies up to 13.6%. For the first time, CdTe solar cells on metal foil exceed the 10% efficiency threshold for industrialization. The controlled doping of CdTe with Cu leads to increased hole density, enhanced carrier lifetime and improved carrier collection in the solar cell. Our results offer new research directions for solving persistent challenges of CdTe photovoltaics.

  7. Synthesis and characterization of TGA-capped CdTe nanoparticles embedded in PVA matrix

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, S.K.; Kaur, Ramneek; Sharma, Mamta [Panjab University, Department of Physics, Center of Advanced Study in Physics, Chandigarh (India)

    2014-10-25

    This paper reports the synthesis and characterization of TGA-capped CdTe nanoparticles and its nanocomposite in a PVA matrix prepared by ex situ technique. The crystallite sizes of the CdTe nanoparticles and nanocomposite calculated from X-ray diffraction patterns are 6.07 and 7.75 nm with hexagonal structure, respectively. The spherical nature of the CdTe nanoparticles is confirmed from transmission electron microscopy measurements. Fourier transform infrared spectroscopy shows good interaction between the CdTe nanoparticles and PVA matrix. The absorption and emission spectra have also been studied. The stability of the TGA-capped CdTe nanoparticles increases after dispersion in a PVA matrix. In electrical measurements, the dark conductivity and the steady-state photoconductivity of CdTe nanocomposite thin films have been studied. The effect of temperature and intensity on the transient photoconductivity of CdTe nanocomposite is also studied. The values of differential life time have been calculated from the decay of photocurrent with time. The non-exponential decay of photoconductivity is observed indicating that the traps exist at all the energies in the band gap, making these materials suitable for various optoelectronic devices. (orig.)

  8. Synthesis and characterization of TGA-capped CdTe nanoparticles embedded in PVA matrix

    International Nuclear Information System (INIS)

    Tripathi, S.K.; Kaur, Ramneek; Sharma, Mamta

    2015-01-01

    This paper reports the synthesis and characterization of TGA-capped CdTe nanoparticles and its nanocomposite in a PVA matrix prepared by ex situ technique. The crystallite sizes of the CdTe nanoparticles and nanocomposite calculated from X-ray diffraction patterns are 6.07 and 7.75 nm with hexagonal structure, respectively. The spherical nature of the CdTe nanoparticles is confirmed from transmission electron microscopy measurements. Fourier transform infrared spectroscopy shows good interaction between the CdTe nanoparticles and PVA matrix. The absorption and emission spectra have also been studied. The stability of the TGA-capped CdTe nanoparticles increases after dispersion in a PVA matrix. In electrical measurements, the dark conductivity and the steady-state photoconductivity of CdTe nanocomposite thin films have been studied. The effect of temperature and intensity on the transient photoconductivity of CdTe nanocomposite is also studied. The values of differential life time have been calculated from the decay of photocurrent with time. The non-exponential decay of photoconductivity is observed indicating that the traps exist at all the energies in the band gap, making these materials suitable for various optoelectronic devices. (orig.)

  9. Nanoparticle precursor route to low-temperature spray deposition of CdTe thin films

    International Nuclear Information System (INIS)

    Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Jones, K.M.; Ginley, D.S.

    1995-01-01

    In this letter we report a nanoparticle-derived route to CdTe thin films. CdTe nanoparticles 39±8 A in diameter, prepared by an organometallic route, were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, and energy dispersive x-ray spectroscopy. CdTe thin-film deposition was realized by spraying a nanoparticle/butanol colloid onto SnO 2 -coated glass substrates at variable susceptor temperatures. The resultant CdTe films were characterized by atomic force microscopy, x-ray diffraction, and UV-Vis spectroscopy. Smooth and dense CdTe thin films were obtained using growth temperatures ∼200 degree C less than conventional spray pyrolysis. A growth temperature dependence upon CdTe grain size formation and crystallinity was observed by atomic force microscopy and x-ray diffraction. UV-Vis characterization revealed a transformation in the optical properties of the CdTe thin films as a function of growth temperature. copyright 1995 American Institute of Physics

  10. Nonstoichiometric composition shift in physical vapor deposition of CdTe thin films

    Science.gov (United States)

    Chin, Ken K.; Cheng, Zimeng; Delahoy, Alan E.

    2015-05-01

    While it is being debated whether Cd vacancy is an effective p-dopant in CdTe, and whether CdTe thin film in solar energy application should be Cd-deficient or Cd-rich, in the theory of CdTe physical vapor deposition (PVD) it has been assumed that both the source material and the thin film product is stoichiometric. To remediate the lack of effective theory, a new PVD model for CdTe photovoltaic (PV) modules is presented in this work, in which the composition of the CdTe thin film under growth is a parameter determined by the source CdTe composition as well as the growth condition. The solid phase Cd1-δTe1+δ compound under deposition temperature is treated as a solid solution with a mole of excess pure Te or Cd as solute and one mole of congruently grown CdTe as solvent. Assuming that the vapor pressure of Te2 can be calculated by using the law of solid solution PTe=H0+aH1+a2H2 round the congruent composition, where the molar number a and the constants H0, H1 and H2 as functions of temperature T are extracted from the experimental data. Thus, the mole fraction of solute in the grown CdTe thin film as well as the growth rate, as a function of the solute mole fraction in the source CdTe can be determined.

  11. Advanced CdTe Photovoltaic Technology: September 2007 - March 2009

    Energy Technology Data Exchange (ETDEWEB)

    Barth, K.

    2011-05-01

    During the last eighteen months, Abound Solar (formerly AVA Solar) has enjoyed significant success under the SAI program. During this time, a fully automated manufacturing line has been developed, fabricated and commissioned in Longmont, Colorado. The facility is fully integrated, converting glass and semiconductor materials into complete modules beneath its roof. At capacity, a glass panel will enter the factory every 10 seconds and emerge as a completed module two hours later. This facility is currently undergoing trials in preparation for large volume production of 120 x 60 cm thin film CdTe modules. Preceding the development of the large volume manufacturing capability, Abound Solar demonstrated long duration processing with excellent materials utilization for the manufacture of high efficiency 42 cm square modules. Abound Solar prototype modules have been measured with over 9% aperture area efficiency by NREL. Abound Solar demonstrated the ability to produce modules at industry leading low costs to NREL representatives. Costing models show manufacturing costs below $1/Watt and capital equipment costs below $1.50 per watt of annual manufacturing capacity. Under this SAI program, Abound Solar supported a significant research and development program at Colorado State University. The CSU team continues to make progress on device and materials analysis. Modeling for increased device performance and the effects of processing conditions on properties of CdTe PV were investigated.

  12. Performance characteristics of CdTe drift ring detector

    Science.gov (United States)

    Alruhaili, A.; Sellin, P. J.; Lohstroh, A.; Veeramani, P.; Kazemi, S.; Veale, M. C.; Sawhney, K. J. S.; Kachkanov, V.

    2014-03-01

    CdTe and CdZnTe material is an excellent candidate for the fabrication of high energy X-ray spectroscopic detectors due to their good quantum efficiency and room temperature operation. The main material limitation is associated with the poor charge transport properties of holes. The motivation of this work is to investigate the performance characteristics of a detector fabricated with a drift ring geometry that is insensitive to the transport of holes. The performance of a prototype Ohmic CdTe drift ring detector fabricated by Acrorad with 3 drift rings is reported; measurements include room temperature current voltage characteristics (IV) and spectroscopic performance. The data shows that the energy resolution of the detector is limited by leakage current which is a combination of bulk and surface leakage currents. The energy resolution was studied as a function of incident X-ray position with an X-ray microbeam at the Diamond Light Source. Different ring biasing schemes were investigated and the results show that by increasing the lateral field (i.e. the bias gradient across the rings) the active area, evaluated by the detected count rate, increased significantly.

  13. Patterning thick diffused junctions on CdTe

    CERN Document Server

    Kalliopuska, Juha; Sipilä, Heikki; Andersson, Hans; Vähänen, Sami; Eränen, Simo; Tlustos, Lukas

    2009-01-01

    Dividing the detector crystal into discrete pixels enables making an imaging detector, in which the charge collected by each pixel can be read separately. Even if the detector is not meant for imaging, patterns on the crystal surface may be used as guard structures that control and limit the flow of charges in the crystal. This has been exceedingly hard for the detector crystals having thick diffused layers. The paper reports a patterning method of the thick diffused junctions on CdTe. The patterning method of In-diffused pn-junction on CdTe chip is demonstrated by using a diamond blade. The patterning is done by removing material from the pn-junction side of the chip, so that the trenches penetrate the diffused layer. As the trenches extend deeper into the bulk than the junction, the regions separated by the trench are electrically isolated. Electrical characterization results are reported for the strips separated by trenches with various depths. The strip isolation is clearly seen in both measured leakage c...

  14. Doping of polycrystalline CdTe for high-efficiency solar cells on flexible metal foil

    OpenAIRE

    Kranz Lukas; Gretener Christina; Perrenoud Julian; Schmitt Rafael; Pianezzi Fabian; La Mattina Fabio; Blösch Patrick; Cheah Erik; Chirila Adrian; Fella Carolin M.; Hagendorfer Harald; Jäger Timo; Nishiwaki Shiro; Uhl Alexander R.; Buecheler S.

    2013-01-01

    Roll to roll manufacturing of CdTe solar cells on flexible metal foil substrates is one of the most attractive options for low cost photovoltaic module production. However various efforts to grow CdTe solar cells on metal foil have resulted in low efficiencies. This is caused by the fact that the conventional device structure must be inverted which imposes severe restrictions on device processing and consequently limits the electronic quality of the CdTe layer. Here we introduce an innovative...

  15. Characteristics of CdTe nanocrystals synthesized by a Na2TeO3 source

    International Nuclear Information System (INIS)

    Wang Meiping; Fu Kai; Lin Jinhui

    2011-01-01

    Water-soluble cadmium telluride (CdTe) nanocrystals were synthesized in aqueous solution with thioglycolic acid (TGA) molecules as a stabilizer. A series of TGA-stabilized CdTe nanocrystals were prepared using sodium tellurite as a tellurium source, which avoids the cumbersome processes associated with H 2 Te or NaHTe sources. The synthesized TGA-stabilized CdTe were characterized with X-ray diffraction, TEM and fluorescence spectrophotometer. The particles crystallized predominantly in cubic phase with narrow photoluminescence emission. The effects of reaction time, pH value, and precursor concentration on the photoluminescence properties were investigated in detail. (semiconductor materials)

  16. Structural and optical characterization of CdTe quantum dots thin films

    International Nuclear Information System (INIS)

    El-Nahass, M.M.; Youssef, G.M.; Noby, Sohaila Z.

    2014-01-01

    Highlights: • CdTe QDs are prepared by hot injection method. • Thermally evaporated CdTeQDs thin films were prepared. • Structural characterization and analysis were done. • Optical parameters were studied. - Abstract: Cadmium telluride quantum dots (CdTe QDs) have been synthesized using hot-injection chemical technique. The CdTe QDs thin films were deposited onto optical flat fused quartz substrates using thermal evaporation technique. The CdTe QDs powder and the as deposited films were characterized using X-ray diffraction and high resolution transmission electron microscope (HRTEM). The X-ray analysis shows that both CdTe QDs powder and the as deposited films crystallize in cubic zinc-blende type structure with lattice parameter 6.46 Å and 6.45 Å, respectively. The X-ray calculation shows that the average crystallite size of the as deposited CdTe QDs films varied from 1.1 nm for the powder to 2.3 nm for the thin film. The HRTEM examination of the as deposited films shows that the average particle size vary from 2.5 nm for the powder to 2.7 nm for the thin film. For the as deposited films, the dependence of (αhν) 2 on the incident photon energy indicates that the optical transitions within the film are allowed direct with energies observed at E g1 ≅2eV and E g2 ≅2.3eV which attributed to quantum confinement effect. The optical band gap increases from 1.5 eV for microstructure CdTe to 2 eV for nanostructure quantum dots which corresponding to wavelength(620 nm) so it is a great benefit to use CdTe quantum dots as solar harvesting devices application in solar spectrum region (400–800 nm). Urbach energy is calculated and found to be 360 meV which is higher than microstructure CdTe. The refractive index and refractive index dispersion of the as deposited CdTe QDs film has been calculated from transmission and reflection spectra. It has been found that the refractive index is reduced from (2.66) for microstructure CdTe to be (1.7) for CdTe quantum

  17. Pre-transition phenomena in CdTe near the melting point

    Science.gov (United States)

    Shcherbak, L.

    1999-02-01

    The influence of slight (up to 2 mol%) CdTe doping by In or Ge on the post-melting effect in CdTe as well as the correlation between the melt's superheating and supercooling has been studied by the DTA method. Some additional endothermic effects above the melting point or liquidus temperature were observed in all the investigated melts. A high degree of structural ordering both in the pure and doped melts was concluded. The structure of the molten state is determined by the thermal pre-history of the solid one. The possibility of a high-temperature CdTe polymorphic modification is discussed.

  18. APT mass spectrometry and SEM data for CdTe solar cells

    Directory of Open Access Journals (Sweden)

    Jonathan D. Poplawsky

    2016-06-01

    Full Text Available Atom probe tomography (APT data acquired from a CAMECA LEAP 4000 XHR for the CdS/CdTe interface for a non-CdCl2 treated CdTe solar cell as well as the mass spectrum of an APT data set including a GB in a CdCl2-treated CdTe solar cell are presented. Scanning electron microscopy (SEM data showing the evolution of sample preparation for APT and scanning transmission electron microscopy (STEM electron beam induced current (EBIC are also presented. These data show mass spectrometry peak decomposition of Cu and Te within an APT dataset, the CdS/CdTe interface of an untreated CdTe solar cell, preparation of APT needles from the CdS/CdTe interface in superstrate grown CdTe solar cells, and the preparation of a cross-sectional STEM EBIC sample.

  19. Properties of CdTe nanocrystalline thin films grown on different substrates by low temperature sputtering

    International Nuclear Information System (INIS)

    Chen Huimin; Guo Fuqiang; Zhang Baohua

    2009-01-01

    CdTe nanocrystalline thin films have been prepared on glass, Si and Al 2 O 3 substrates by radio-frequency magnetron sputtering at liquid nitrogen temperature. The crystal structure and morphology of the films were characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). The XRD examinations revealed that CdTe films on glass and Si had a better crystal quality and higher preferential orientation along the (111) plane than the Al 2 O 3 . FESEM observations revealed a continuous and dense morphology of CdTe films on glass and Si substrates. Optical properties of nanocrystalline CdTe films deposited on glass substrates for different deposited times were studied.

  20. Recent Developments of Flexible CdTe Solar Cells on Metallic Substrates: Issues and Prospects

    OpenAIRE

    M. M. Aliyu; M. A. Islam; N. R. Hamzah; M. R. Karim; M. A. Matin; K. Sopian; N. Amin

    2012-01-01

    This study investigates the key issues in the fabrication of CdTe solar cells on metallic substrates, their trends, and characteristics as well as effects on solar cell performance. Previous research works are reviewed while the successes, potentials, and problems of such technology are highlighted. Flexible solar cells offer several advantages in terms of production, cost, and application over glass-based types. Of all the metals studied as substrates for CdTe solar cells, molybdenum appears...

  1. Degradation processes occur on the CdTe thin films solar elements

    CERN Document Server

    Mirsagatov, S A; Makhmudov, M; Muzapharova, S A

    1999-01-01

    It is shown the Cu in CdTe polycristalline films is diffusing on the complex mechanism. By bringing of W atoms in thin CdTe layers it is possible to operate diffusion's speed of Cu atoms. Initiation of the (Cu sup + W sub C sub d sup -) complexes under the conditions N(W sub C sub d sup -)>=N(Cu sub i sup +) hardly reduce the diffusion velocity of Cu atoms.

  2. On the doping problem of CdTe films: The bismuth case

    Energy Technology Data Exchange (ETDEWEB)

    Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Brown, M. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Ruiz, C.M. [Depto. Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Vidal-Borbolla, M.A. [Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Lomas 4a. Secc., 78210 San Luis Potosi, SLP (Mexico); Ramirez-Bon, R. [CINVESTAV-IPN, U. Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico); Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)], E-mail: mtufinovel@yahoo.com.mx; Calixto, M. Estela [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Compaan, A.D. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)

    2008-08-30

    The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10{sup 13} cm{sup -3}, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10{sup 15} cm{sup -3}. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.

  3. Iodine Doping of CdTe and CdMgTe for Photovoltaic Applications

    Science.gov (United States)

    Ogedengbe, O. S.; Swartz, C. H.; Jayathilaka, P. A. R. D.; Petersen, J. E.; Sohal, S.; LeBlanc, E. G.; Edirisooriya, M.; Zaunbrecher, K. N.; Wang, A.; Barnes, T. M.; Myers, T. H.

    2017-09-01

    Iodine-doped CdTe and Cd1- x Mg x Te layers were grown by molecular beam epitaxy. Secondary ion mass spectrometry characterization was used to measure dopant concentration, while Hall measurement was used for determining carrier concentration. Photoluminescence intensity and time-resolved photoluminescence techniques were used for optical characterization. Maximum n-typ e carrier concentrations of 7.4 × 1018 cm-3 for CdTe and 3 × 1017 cm-3 for Cd0.65Mg0.35Te were achieved. Studies suggest that electrically active doping with iodine is limited with dopant concentration much above these values. Dopant activation of about 80% was observed in most of the CdTe samples. The estimated activation energy is about 6 meV for CdTe and the value for Cd0.65Mg0.35Te is about 58 meV. Iodine-doped samples exhibit long lifetimes with no evidence of photoluminescence degradation with doping as high as 2 × 1018 cm-3, while indium shows substantial non-radiative recombination at carrier concentrations above 5 × 1016 cm-3. Iodine was shown to be thermally stable in CdTe at temperatures up to 600°C. Results suggest iodine may be a preferred n-type dopant compared to indium in achieving heavily doped n-type CdTe.

  4. Oxygen Incorporation During Fabrication of Substrate CdTe Photovoltaic Devices: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Duenow, J. N.; Dhere, R. G.; Kuciauskas, D.; Li, J. V.; Pankow, J. W.; DeHart, C. M.; Gessert, T. A.

    2012-06-01

    Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower ({approx}6%-8%) than those of high-performance superstrate devices ({approx}17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.

  5. On the doping problem of CdTe films: The bismuth case

    International Nuclear Information System (INIS)

    Vigil-Galan, O.; Brown, M.; Ruiz, C.M.; Vidal-Borbolla, M.A.; Ramirez-Bon, R.; Sanchez-Meza, E.; Tufino-Velazquez, M.; Calixto, M. Estela; Compaan, A.D.; Contreras-Puente, G.

    2008-01-01

    The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10 13 cm -3 , depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10 15 cm -3 . Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented

  6. The CdTe detector module and its imaging performance.

    Science.gov (United States)

    Mori, I; Takayama, T; Motomura, N

    2001-12-01

    In recent years investigations into the application of semiconductor detector technology in gamma cameras have become active world-wide. The reason for this burst of activity is the expectation that the semiconductor-based gamma camera would outperform the conventional Anger-type gamma camera with a large scintillator and photomultipliers. Nevertheless, to date, it cannot be said that this expectation has been met. While most of the studies have used CZT (Cadmium Zinc Telluride) as the semiconductor material, we designed and fabricated an experimental detector module of CdTe (Cadmium Telluride). The module consists of 512 elements and its pixel pitch is 1.6 mm. We have evaluated its energy resolution, planar image performance, single photon emission computed tomography (SPECT) image performance and time resolution for coincidence detection. The average energy resolution was 5.5% FWHM at 140 keV. The intrinsic spatial resolution was 1.6 mm. The quality of the phantom images, both planar and SPECT, was visually superior to that of the Anger-type gamma camera. The quantitative assessment of SPECT images showed accuracy far better than that of the Anger-type camera. The coincidence time resolution was 8.6 ns. All measurements were done at room temperature, and the polarization effect that had been the biggest concern for CdTe was not significant. The results indicated that the semiconductor-based gamma camera is superior in performance to the Anger-type and has the possibility of being used as a positron emission computed tomography (PET) scanner.

  7. Influence of CdTe Deposition Temperature and Window Thickness on CdTe Grain Size and Lifetime After CdCl2 Recrystallization

    Energy Technology Data Exchange (ETDEWEB)

    Amarasinghe, Mahisha; Colegrove, Eric; Moutinho, Helio; Albin, David; Duenow, Joel; Johnston, Steve; Kephart, Jason; Sampath, Walajabad; Al-Jassim, Mowafak; Sivananthan, Siva; Metzger, Wyatt K.

    2018-03-01

    Grain structure influences both transport and recombination in CdTe solar cells. Larger grains generally are obtained with higher deposition temperatures, but commercially it is important to avoid softening soda-lime glass. Furthermore, depositing at lower temperatures can enable different substrates and reduced cost in the future. We examine how initial deposition temperatures and morphology influence grain size and lifetime after CdCl2 recrystallization. Techniques are developed to estimate grain distribution quickly with low-cost optical microscopy, which compares well with electron backscatter diffraction data providing corroborative assessments of exposed CdTe grain structures. Average grain size increases as a function of CdCl2 temperature. For lower temperature close-spaced sublimation CdTe depositions, there can be more stress and grain segregation during recrystallization. However, the resulting lifetimes and grain sizes are similar to high-temperature CdTe depositions. The grain structures and lifetimes are largely independent of the presence and/or interdiffusion of Se at the interface, before and after the CdCl2 treatment.

  8. PENINGKATAN KUALITAS FILM TIPIS CdTe SEBAGAI ABSORBER SEL SURYA DENGAN MENGGUNAKAN DOPING TEMBAGA (Cu

    Directory of Open Access Journals (Sweden)

    P. Marwoto

    2012-07-01

    Full Text Available Film tipis CdTe dengan doping tembaga (Cu berkonsenterasi 2% telah berhasil ditumbuhkan di atas substrat Indium Tin Oxide (ITO dengan metode dc magnetron sputtering. Penelitian ini dilakukan untuk mengetahui pengaruh doping Cu(2% terhadap struktur morfologi, struktur kristal, fotoluminisensi dan resistivitas listrik film CdTe. Citra morfologi Scanning Electron Microscopy (SEM dan hasil analisis struktur dengan X-Ray Diffraction (XRD menunjukkan bahwa film CdTe:Cu(2% mempunyai citra permukaan dan struktur kristal yang lebih sempurna dibandingkan film CdTe tanpa doping. Hasil analisis spektrometer fotoluminisensi menunjukkan bahwa film CdTe dan CdTe(2% mempunyai puncak fotoluminisensi pada tiga panjang gelombang yang identik yaitu 685 nm (1,81 eV, 725 nm (1,71 eV dan 740 nm (1,67 eV. Film CdTe dengan doping Cu(2% memiliki intensitas puncak fotoluminisensi yang lebih tajam pada pita energi 1,81 eV dibandingkan dengan film CdTe tanpa doping. Pengukuran arus dan tegangan (I-V menunjukkan bahwa pemberian doping Cu(2% dapat menurunkan resistivitas film dari 8,40x109 Ωcm menjadi 6,92x105 Ωcm. Sebagai absorber sel surya, kualitas film tipis CdTe telah berhasil ditingkatkan dengan pemberian doping Cu(2%.CdTe:Cu(2% thin film has been successfully grown on Indium Tin Oxide (ITO substrates by using dc magnetron sputtering. This study was carried out in order to investigate the effect of Cu(2% doping on the morphologycal structure, crystal structure, photoluminesence, and resistivity of CdTe thin film. Scanning Electron Microscopy (SEM  images and X-Ray Diffraction (XRD results showed that CdTe:Cu(2% thin film has morphologycal and crystal structures more perfect than undoped CdTe film. Photoluminesence spectroscopy results showed that CdTe and CdTe:Cu(2% thin films have luminesence peak at three identical wevelength regions i.e. 685 nm (1.81 eV, 725 nm (1.71 eV and 740 nm (1.67 eV however CdTe:Cu(2% film shows sharper photoluminescence peak at band

  9. Growth of cubic and hexagonal CdTe thin films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Pandey, S.K. [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054 (India)]. E-mail: 628@ssplnet.org; Tiwari, Umesh [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054 (India); Raman, R. [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054 (India); Prakash, Chandra [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110 054 (India); Krishna, Vamsi [Centre for Energy Studies, Indian Institute of Technology, New Delhi 110 016 (India); Dutta, Viresh [Centre for Energy Studies, Indian Institute of Technology, New Delhi 110 016 (India); Zimik, K. [Laser Science and Technology Centre, Metcalfe House, Delhi 110 054 (India)

    2005-02-01

    The paper reports the growth of cadmium telluride (CdTe) thin films by pulsed laser deposition (PLD) using excimer laser (KrF, {lambda}=248 nm, 10 Hz) on corning 7059 glass and SnO{sub 2}-coated glass (SnO{sub 2}/glass) substrates at different substrate temperatures (T{sub s}) and at different laser energy pulses. Single crystal target CdTe was used for deposition of thin films. With 30 min deposition time, 1.8- to {approx}3-{mu}m-thick films were obtained up to 200 deg. C substrate temperature. However, the film re-evaporates from the substrate surface at temperatures >275 deg. C. Atomic force microscopy (AFM) shows an average grain size {approx}0.3 {mu}m. X-ray diffraction analysis confirms the formation of CdTe cubic phase at all pulse energies except at 200 mJ. At 200 mJ laser energy, the films show hexagonal phase. Optical properties of CdTe were also investigated and the band gap of CdTe films were found as 1.54 eV for hexagonal phase and {approx}1.6 eV for cubic phase.

  10. Radiative recombination mechanisms in CdTe thin films deposited by elemental vapor transport

    Energy Technology Data Exchange (ETDEWEB)

    Collins, Shamara [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States); Vatavu, Sergiu, E-mail: svatavu@usm.md [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States); Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., Chisinau, MD-2009, Republic of Moldova (Moldova, Republic of); Evani, Vamsi; Khan, Md; Bakhshi, Sara; Palekis, Vasilios [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States); Rotaru, Corneliu [Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str., Chisinau, MD-2009, Republic of Moldova (Moldova, Republic of); Ferekides, Chris [Department of Electrical Engineering, University of South Florida, 4202 East Fowler Ave, Tampa, FL 33620 (United States)

    2015-05-01

    A photoluminesence (PL) study of the radiative recombination mechanisms for CdTe films deposited under different Cd and Te overpressure by elemental vapor transport is presented. The experiment and analysis have been carried out in the temperature range of 12-130 K. The intensity of the PL laser excitation beam was varied by two orders of magnitude. It has been established that the bands in the 1.47-1.50 eV are determined by transitions involving shallow D and A states and the 1.36x-1.37x eV band is due to band to level transitions. Deep transitions at 1.042 eV and 1.129 eV are due to radiative transitions to levels determined by CdTe native defects. - Highlights: • Photoluminescense (PL) of CdTe thin films is present in the 0.8-1.6 eV spectral region. • High intensity excitonic peaks are among the main radiative paths. • Radiative transitions at 1.36x eV are assisted by dislocations caused levels. • Extremal Cd/Te overpressure ratios enhance PL for 1.497 eV, 1.486 eV, 1.474 eV bands. • PL intensity reaches its max value for the 0.45 and 1.25 Cd/Te overpressure ratios.

  11. Influence of Au diffusion on structural, electrical and optical characteristics of CdTe thin films

    International Nuclear Information System (INIS)

    Dzhafarov, T D; Caliskan, M

    2007-01-01

    Diffusion of Au and its effects on structural, electrical and optical properties of CdTe films fabricated by the close-spaced sublimation technique have been investigated. Diffusion of Au was studied in the range 400-550 deg. C using energy dispersive x-ray fluorescence analysis. Au-doped and un-doped CdTe films were characterized by x-ray diffraction (XRD), electrical and optical absorption measurements. The temperature dependence of the diffusion coefficient of Au in CdTe films is described as D = 4.4 x 10 -7 exp(-0.54 eV/kT). The mechanism of Au diffusion in polycrystalline CdTe films is attributed to the fast migration of Au along grain boundaries with simultaneous penetration into grains and settling on Cd-vacancies. It is supposed that the weak influence of Au diffusion on XRD patterns of CdTe films can be explained by dispersal of Au atoms preferentially on Cd-vacancies owing to proximity of the covalent radius of Au and Cd. Au atoms, placed on Cd-vacancies (Au Cd ) during fast cooling from diffusion temperature to room temperature, show an acceptor behaviour with an energy level about of E v + 0.2 eV. The nature of this level is discussed

  12. Luminescent behavior of CdTe quantum dots: Neodymium(III) complex-capped nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Miranda, Margarida S. [Centro de Geologia do Porto, Faculdade de Ciencias, Universidade do Porto, Rua do Campo Alegre s/n, 4169-007 Porto (Portugal); Algarra, Manuel, E-mail: magonzal@fc.up.pt [Centro de Geologia do Porto, Faculdade de Ciencias, Universidade do Porto, Rua do Campo Alegre s/n, 4169-007 Porto (Portugal); Jimenez-Jimenez, Jose; Rodriguez-Castellon, Enrique [Departamento de Quimica Inorganica, Facultad de Ciencias, Universidad de Malaga, Campus de Teatinos s/n 29071, Malaga (Spain); Campos, Bruno B.; Esteves da Silva, Joaquim C.G. [Centro de Investigacao em Quimica (CIQ-UP), Faculdade de Ciencias, Universidade do Porto, Rua do Campo Alegre s/n, 4169-007 Porto (Portugal)

    2013-02-15

    A water soluble complex of neodymium(III) with CdTe quantum dots nanoparticles was synthesized. The obtained homogeneous solutions were characterized by fluorescence, X-ray photoelectron and energy dispersive X-ray spectroscopies. The effect of the refluxing time of the reaction on the fluorescence intensity and emission wavelength has been studied. It was found that the emission wavelength of the solutions of neodymium(III) complex capped CdTe QDs nanoparticles shifted from about 540 to 735 nm. For an emission wavelength of 668 nm, the most reproducible nanoparticles obtained, the pH effect over the fluorescence emission and its intensity were studied. The purified and lyophilized solid obtained was morphologically characterized by transmission electron microscopy (TEM). The quantitative composition was determined by fluorescence X-ray spectroscopy (EDAX) and the X-ray photoelectron analysis (XPS) confirmed the presence of neodymium(III) at the surface of the CdTe nanoparticles forming a complex with the carboxylate groups from 3-mercaptopropanoic acid of the CdTe QDs. Due to the optical behavior of this complex, it could be of potential interest as a light source in optical devices. - Highlights: Black-Right-Pointing-Pointer CdTe quantum dots nanoparticles. Black-Right-Pointing-Pointer Neodymium(III) complexed quantum dots. Black-Right-Pointing-Pointer Strong red fluorescent emission nanomaterial soluble in water.

  13. Studying nanotoxic effects of CdTe quantum dots in Trypanosoma cruzi

    Directory of Open Access Journals (Sweden)

    Cecilia Stahl Vieira

    2011-03-01

    Full Text Available Semiconductor nanoparticles, such as quantum dots (QDs, were used to carry out experiments in vivo and ex vivo with Trypanosoma cruzi. However, questions have been raised regarding the nanotoxicity of QDs in living cells, microorganisms, tissues and whole animals. The objective of this paper was to conduct a QD nanotoxicity study on living T. cruzi protozoa using analytical methods. This was accomplished using in vitro experiments to test the interference of the QDs on parasite development, morphology and viability. Our results show that after 72 h, a 200 μM cadmium telluride (CdTe QD solution induced important morphological alterations in T. cruzi, such as DNA damage, plasma membrane blebbing and mitochondrial swelling. Flow cytometry assays showed no damage to the plasma membrane when incubated with 200 μM CdTe QDs for up to 72 h (propidium iodide cells, giving no evidence of classical necrosis. Parasites incubated with 2 μM CdTe QDs still proliferated after seven days. In summary, a low concentration of CdTe QDs (2 μM is optimal for bioimaging, whereas a high concentration (200 μM CdTe could be toxic to cells. Taken together, our data indicate that 2 μM QD can be used for the successful long-term study of the parasite-vector interaction in real time.

  14. CuTe Nanoparticles/Carbon Nanotubes as Back Contact for CdTe Solar Cells

    Science.gov (United States)

    Li, Chunxiu; Xu, Hang; Li, Kang; Ma, Xiao; Wu, Lili; Wang, Wenwu; Zhang, Jingquan; Li, Wei; Li, Bing; Feng, Lianghuan

    2018-02-01

    The Schottky barrier between the CdTe layer and metal electrode has opposite polarity to the CdS/CdTe cell junction, which can greatly degrade cell performance. Adding a back contact (BC) layer can reduce the Schottky barrier at metal/ p-CdTe interfaces. Paste including CuTe nanoparticles and carbon nanotubes (CuTe NPs/CNTs) was used as a BC in thin-film CdTe solar cells. The effect of the mass of carbon nanotubes (CNTs) in the paste and the BC annealing temperature on cell performance was explored. Cu film and paste including Cu nanoparticles and carbon nanotubes (Cu NPs/CNTs) were fabricated as the BC for CdTe solar cells. The performance of CdTe solar cells based on different kinds of Cu-containing BCs studied. The fill factor and open-circuit voltage ( V OC) of devices with CuTe NPs/CNTs BC were greatly improved by optimizing the mass of CNTs in the paste and the annealing temperature. The carrier concentration in the CdTe layer was improved by one order of magnitude. The CuTe NPs/CNTs BC showed the best effect on cell efficiency for the Cu-containing BC.

  15. Recent Developments of Flexible CdTe Solar Cells on Metallic Substrates: Issues and Prospects

    Directory of Open Access Journals (Sweden)

    M. M. Aliyu

    2012-01-01

    Full Text Available This study investigates the key issues in the fabrication of CdTe solar cells on metallic substrates, their trends, and characteristics as well as effects on solar cell performance. Previous research works are reviewed while the successes, potentials, and problems of such technology are highlighted. Flexible solar cells offer several advantages in terms of production, cost, and application over glass-based types. Of all the metals studied as substrates for CdTe solar cells, molybdenum appears the most favorable candidate, while close spaced sublimation (CSS, electrodeposition (ED, magnetic sputtering (MS, and high vacuum thermal evaporation (HVE have been found to be most common deposition technologies used for CdTe on metal foils. The advantages of these techniques include large grain size (CSS, ease of constituent control (ED, high material incorporation (MS, and low temperature process (MS, HVE, ED. These invert-structured thin film CdTe solar cells, like their superstrate counterparts, suffer from problems of poor ohmic contact at the back electrode. Thus similar strategies are applied to minimize this problem. Despite the challenges faced by flexible structures, efficiencies of up to 13.8% and 7.8% have been achieved in superstrate and substrate cell, respectively. Based on these analyses, new strategies have been proposed for obtaining cheaper, more efficient, and viable flexible CdTe solar cells of the future.

  16. Photoluminescence of CdTe nanocrystals grown by pulsed laser ablation on a template of Si nanoparticles

    International Nuclear Information System (INIS)

    Guillen-Cervantes, A.; Silva-Lopez, H.; Becerril-Silva, M.; Arias-Ceron, J.S.; Campos-Gonzalez, E.; Zelaya-Angel, O.; Medina-Torres, A.C.

    2015-01-01

    CdTe nanocrystals were grown on eroded Si (111) substrates at room temperature by pulsed laser ablation. Before growth, Si substrates were subjected to different erosion time in order to investigate the effect on the CdTe samples. The erosion process consists of exposition to a pulsed high-voltage electric arc. The surface consequence of the erosion process consists of Si nanoparticles which acted as a template for the growth of CdTe nanocrystals. CdTe samples were studied by X-ray diffraction (XRD), room temperature photoluminescence (RT PL) and high-resolution transmission electron microscopy (HRTEM). CdTe nanocrystals grew in the stable cubic phase, according to XRD spectra. A strong visible emission was detected in photoluminescence (PL) experiments. The PL signal was centered at 540 nm (∝2.34 eV). With the effective mass approximation, the size of the CdTe crystals was estimated around 3.5 nm. HRTEM images corroborated the physical characteristics of CdTe nanocrystals. These results could be useful for the development of CdTe optoelectronic devices. (orig.)

  17. X-ray photoelectron spectroscopy studies of the surface composition of highly luminescent CdTe nanoparticles in multilayer films

    International Nuclear Information System (INIS)

    Zhang Hao; Yang Bai

    2002-01-01

    3-Mercaptopropionic acid-stabilized CdTe nanoparticles were prepared and assembled layer-by-layer with poly(diallyldimethylammonium chloride) (PDAC) to form a polymer-supported ultrathin film by virtue of the Coulombic interaction between negatively charged CdTe and positively charged PDAC. The composition of the CdTe nanoparticle multilayer films was analyzed by X-ray photoelectron spectroscopy (XPS) combined with optical absorbance and luminescence measurements. It was experimentally observed that Cd-thiol complexes on the surface of the CdTe nanoparticles provide the crucial chemical passivation responsible for the high photoluminescence (PL) efficiency of the CdTe particles. The high PL efficiency and high stability of CdTe particles corresponded to the particles with the high surface coverage with Cd-thiol complexes. Moreover, XPS data indicated the surface coverage with Cd-thiol complexes could be increased around the CdTe particle by either reflux or adjusting the pH of resulted CdTe colloidal suspension, which was consistent with the results from optical absorbance and luminescence spectra. It appeared that the popular method of constructing multilayer films could be used as a tool to characterize the surface composition of nanometer-sized particles

  18. Photoluminescence of CdTe nanocrystals grown by pulsed laser ablation on a template of Si nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Guillen-Cervantes, A.; Silva-Lopez, H.; Becerril-Silva, M.; Arias-Ceron, J.S.; Campos-Gonzalez, E.; Zelaya-Angel, O. [CINVESTAV-IPN, Physics Department, Apdo. Postal 14-740, Mexico (Mexico); Medina-Torres, A.C. [Escuela Superior de Fisica y Matematicas del IPN, Mexico (Mexico)

    2014-11-12

    CdTe nanocrystals were grown on eroded Si (111) substrates at room temperature by pulsed laser ablation. Before growth, Si substrates were subjected to different erosion time in order to investigate the effect on the CdTe samples. The erosion process consists of exposition to a pulsed high-voltage electric arc. The surface consequence of the erosion process consists of Si nanoparticles which acted as a template for the growth of CdTe nanocrystals. CdTe samples were studied by X-ray diffraction (XRD), room temperature photoluminescence (RT PL) and high-resolution transmission electron microscopy (HRTEM). CdTe nanocrystals grew in the stable cubic phase, according to XRD spectra. A strong visible emission was detected in photoluminescence (PL) experiments. The PL signal was centered at 540 nm (∝2.34 eV). With the effective mass approximation, the size of the CdTe crystals was estimated around 3.5 nm. HRTEM images corroborated the physical characteristics of CdTe nanocrystals. These results could be useful for the development of CdTe optoelectronic devices. (orig.)

  19. X ray spectra measurement using a CdTe detector

    International Nuclear Information System (INIS)

    Kurkova, D.; Judas, L.

    2014-01-01

    X ray spectra were measured using a CdTe XR-100T detector (Amptek). Spectra of N series were measured (according to ISO 4037-1:1996): from N60 to N150 for anode voltage of the tube 60-150 kV, realised by x ray tubeIsovolt Titan in dosimetric laboratory SURO, v.v.i.. Two sets of spectra were measured - first without using the tungsten collimator kit of the spectrometer, in a distance of 7 m from x ray tube and low tube current and second using a tungsten collimator kit measured in a distance 1 m from x ray tube focus and low tube current. Elimination of random coincidences was achieved by reduction of counting rates on the detection system. Further artefacts in measured spectra were compensated using an analytic response matrix. Response matrix was computed and subsequently applied in a program made in MATLAB. We demonstrate a function of response matrix on both model physical spectra and measured spectra. In consequence of mainly continuous character of measured spectra more parameters are needed for its description compared to the line spectra. Therefore we came up with additional parameters for characterization and mutual comparison of x ray spectra. (authors)

  20. CdTe detector based PIXE mapping of geological samples

    Energy Technology Data Exchange (ETDEWEB)

    Chaves, P.C., E-mail: cchaves@ctn.ist.utl.pt [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Taborda, A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Oliveira, D.P.S. de [Laboratório Nacional de Energia e Geologia (LNEG), Apartado 7586, 2611-901 Alfragide (Portugal); Reis, M.A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal)

    2014-01-01

    A sample collected from a borehole drilled approximately 10 km ESE of Bragança, Trás-os-Montes, was analysed by standard and high energy PIXE at both CTN (previous ITN) PIXE setups. The sample is a fine-grained metapyroxenite grading to coarse-grained in the base with disseminated sulphides and fine veinlets of pyrrhotite and pyrite. Matrix composition was obtained at the standard PIXE setup using a 1.25 MeV H{sup +} beam at three different spots. Medium and high Z elemental concentrations were then determined using the DT2fit and DT2simul codes (Reis et al., 2008, 2013 [1,2]), on the spectra obtained in the High Resolution and High Energy (HRHE)-PIXE setup (Chaves et al., 2013 [3]) by irradiation of the sample with a 3.8 MeV proton beam provided by the CTN 3 MV Tandetron accelerator. In this paper we present results, discuss detection limits of the method and the added value of the use of the CdTe detector in this context.

  1. CdTe reflection anisotropy line shape fitting

    International Nuclear Information System (INIS)

    Molina-Contreras, J.R.

    2010-01-01

    In this paper, an empirical novel plane-wave time dependent ensemble is introduced to fit the RA, the reflectance (R) and the imaginary part of the dielectric function oscillation measured around the E 1 and E 1 + Δ 1 transition region in II-VI semiconductors. By applying the new plane-wave time dependent ensemble to the measured spectrum for a (0 0 1) oriented CdTe undoped commercial wafer, crystallized in a zinc-blende structure, a very good agreement was found between the measured spectrum and the fitting. In addition to this, the reliability of the plane-wave time dependent ensemble was probed, by comparing the results with the calculated fitting in terms of a Fourier series and in terms of a six-order polynomial fit. Our analysis suggests, that the experimental oscillation in the line shape of the RA cannot be fitted with a Fourier series using harmonics multiples of the number which dominates the measured RA spectra in the argument of the plane-wave ensemble.

  2. Characterization of a pixel CdTe detector for nuclearv medicine imaging

    OpenAIRE

    Ariño Estrada, Gerard

    2015-01-01

    Aquesta tesi presenta la caracterització d'un disseny de detector pxel de CdTe per aplicació en imatge en medicina nuclear. El treball d'aquesta tesi s'ha portat a terme en el marc del projecte Voxel Imaging PET (VIP) Pathnder. El projecte VIP es un projecte ambiciós que pretén provar la viabilitat d'utilitzar detectors pixel·lats de CdTe en imatge en medicina nuclear. El disseny proposat és el mòdul VIP, que consta de blocs de CdTe de 10 mm 10 mm de superfcie i 2 mm de gruix, que estan segme...

  3. Microstructural, optical and electrical properties of Cl-doped CdTe single crystals

    Directory of Open Access Journals (Sweden)

    Choi Hyojeong

    2016-09-01

    Full Text Available Microstructural, optical and electrical properties of Cl-doped CdTe crystals grown by the low pressure Bridgman (LPB method were investigated for four different doping concentrations (unintentionally doped, 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3 and three different locations within the ingots (namely, samples from top, middle and bottom positions in the order of the distance from the tip of the ingot. It was shown that Cl dopant suppressed the unwanted secondary (5 1 1 crystalline orientation. Also, the average size and surface coverage of Te inclusions decreased with an increase in Cl doping concentration. Spectroscopic ellipsometry measurements showed that the optical quality of the Cl-doped CdTe single crystals was enhanced. The resistivity of the CdTe sample doped with Cl at the 1.99 × 1020 cm−3 was above 1010 Ω.cm.

  4. Electrochemical Determination of Uric Acid at CdTe Quantum Dot Modified Glassy Carbon Electrodes.

    Science.gov (United States)

    Pan, Deng; Rong, Shengzhong; Zhang, Guangteng; Zhang, Yannan; Zhou, Qiang; Liu, Fenghai; Li, Miaojing; Chang, Dong; Pan, Hongzhi

    2015-01-01

    Cyclic voltammetry and differential pulse voltammetry were used to investigate the electrochemical behavior of uric acid (UA) at a CdTe quantum dot (QD) modified the glassy carbon electrode (GCE). CdTe QDs, as new semiconductor nanocrystals, can greatly improve the peak current of UA. The anodic peak current of UA was linear with its concentration between 1.0×10(-6) and 4.0×10(-4) M in 0.1 M pH 5.0 phosphate buffer solution. The LOD for UA at the CdTe electrode (1.0×10(-7) M) was superior to that of the GCE. In addition, we also determined the effects of scan rate, pH, and interferences of UA for the voltammetric behavior and detection. The results indicated that modified electrode possessed excellent reproducibility and stability. Finally, a new and efficient electrochemical sensor for detecting UA was developed.

  5. CdTe Quantum Dots Embedded in Multidentate Biopolymer Based on Salep: Characterization and Optical Properties

    Directory of Open Access Journals (Sweden)

    Ghasem Rezanejade Bardajee

    2013-01-01

    Full Text Available This paper describes a novel method for surface modification of water soluble CdTe quantum dots (QDs by using poly(acrylic acid grafted onto salep (salep-g-PAA as a biopolymer. As-prepared CdTe-salep-g-PAA QDs were characterized by Fourier transform infrared (FT-IR spectrum, thermogravimetric (TG analysis, and transmission electron microscopy (TEM. The absorption and fluorescence emission spectra were measured to investigate the effect of salep-g-PAA biopolymer on the optical properties of CdTe QDs. The results showed that the optical properties of CdTe QDs were significantly enhanced by using salep-g-PAA-based biopolymer.

  6. Cadmium flows and emissions from CdTe PV: future expectations

    International Nuclear Information System (INIS)

    Cadmium telluride photovoltaic (CdTe PV) technology is growing rapidly, and already represents the largest contributor to non-silicon based photovoltaics worldwide. We assessed the extent to which CdTe PV will play a notable role in the Cd use and emission flows in the future, and whether it will be environmentally beneficial or detrimental. Our results show that while CdTe PV may account for a large percentage of future global Cd demand, its role in terms of Cd sequestration may be beneficial. We calculated that its potential contribution to yearly global Cd emissions to air and water may well be orders-of-magnitude lower than the respective current Cd emissions rates in Europe.

  7. Spectrum-per-Pixel Cathodoluminescence Imaging of CdTe Thin-Film Bevels

    Energy Technology Data Exchange (ETDEWEB)

    Moseley, John; Al-Jassim, Mowafak M.; Burst, James; Guthrey, Harvey L.; Metzger, Wyatt K.

    2016-11-21

    We conduct T=6 K cathodoluminescence (CL) spectrum imaging with a nano-scale electron beam on beveled surfaces of CdTe thin-films at different critical stages of standard CdTe device fabrication. The through-thickness total CL intensity profiles are consistent with a reduction in grain boundary recombination due to the CdCl2 treatment. Color-coded maps of the low-temperature luminescence transition energies reveal that CdTe thin films have remarkably non-uniform opto-electronic properties, which depend strongly on sample processing history. The grain-to-grain S content in the interdiffused CdTe/CdS region is estimated from a sample size of thirty-five grains, and the S content in adjacent grains varies significantly in CdCl2-treated samples. A low-temperature luminescence model is developed to interpret spectral behavior at grain boundaries and grain interiors.

  8. The next generation CdTe technology- Substrate foil based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, Chris [Univ. of South Florida, Tampa, FL (United States)

    2017-03-22

    The main objective of this project was the development of one of the most promising Photovoltaic (PV) materials CdTe into a versatile, cost effective, and high throughput technology, by demonstrating substrate devices on foil substrates using high throughput fabrication conditions. The typical CdTe cell is of the superstrate configuration where the solar cell is fabricated on a glass superstrate by the sequential deposition of a TCO, n-type heterojunction partner, p-CdTe absorber, and back contact. Large glass modules are heavy and present significant challenges during manufacturing (uniform heating, etc.). If a substrate CdTe cell could be developed (the main goal of this project) a roll-to-toll high throughput technology could be developed.

  9. Recent Progress on Solution-Processed CdTe Nanocrystals Solar Cells

    Directory of Open Access Journals (Sweden)

    Hao Xue

    2016-07-01

    Full Text Available Solution-processed CdTe nanocrystals (NCs photovoltaic devices have many advantages, both in commercial manufacture and daily operation, due to the low-cost fabrication process, which becomes a competitive candidate for next-generation solar cells. All solution-processed CdTe NCs solar cells were first reported in 2005. In recent years, they have increased over four-fold in power conversion efficiency. The latest devices achieve AM 1.5 G power conversion efficiency up to 12.0%, values comparable to those of commercial thin film CdTe/CdS solar cells fabricated by the close-space sublimation (CSS method. Here we review the progress and prospects in this field, focusing on new insights into CdTe NCs synthesized, device fabrication, NC solar cell operation, and how these findings give guidance on optimizing solar cell performance.

  10. A new MBE CdTe photoconductor array detector for X-ray applications

    International Nuclear Information System (INIS)

    Yoo, S.S.; Sivananthan, S.; Faurie, J.P.; Rodricks, B.; Bai, J.; Montano, P.A.; Argonne National Lab., IL

    1994-10-01

    A CdTe photoconductor array x-ray detector was grown using Molecular Beam Epitaxially (MBE) on a Si (100) substrate. The temporal response of the photoconductor arrays is as fast as 21 psec risetime and 38 psec Full Width Half Maximum (FWHM). Spatial and energy responses were obtained using x-rays from a rotating anode and synchrotron radiation source. The spatial resolution of the photoconductor was good enough to provide 75 microm FWHM using a 50 microm synchrotron x-ray beam. A substantial number of x-ray photons are absorbed effectively within the MBE CdTe layer as observed from the linear response up to 15 keV. These results demonstrate that MBE grown CdTe is a suitable choice of the detector materials to meet the requirements for x-ray detectors in particular for the new high brightness synchrotron sources

  11. Heavy doping of CdTe single crystals by Cr ion implantation

    Science.gov (United States)

    Popovych, Volodymyr D.; Böttger, Roman; Heller, Rene; Zhou, Shengqiang; Bester, Mariusz; Cieniek, Bogumil; Mroczka, Robert; Lopucki, Rafal; Sagan, Piotr; Kuzma, Marian

    2018-03-01

    Implantation of bulk CdTe single crystals with high fluences of 500 keV Cr+ ions was performed to achieve Cr concentration above the equilibrium solubility limit of this element in CdTe lattice. The structure and composition of the implanted samples were studied using secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) to characterize the incorporation of chromium into the host lattice and to investigate irradiation-induced damage build-up. It was found that out-diffusion of Cr atoms and sputtering of the targets alter the depth distribution and limit concentration of the projectile ions in the as-implanted samples. Appearance of crystallographically oriented, metallic α-Cr nanoparticles inside CdTe matrix was found after implantation, as well as a strong disorder at the depth far beyond the projected range of the implanted ions.

  12. High-resolution CdTe detectors with application to various fields (Conference Presentation)

    Science.gov (United States)

    Takeda, Shin'ichiro; Orita, Tadashi; Arai, Yasuo; Sugawara, Hirotaka; Tomaru, Ryota; Katsuragawa, Miho; Sato, Goro; Watanabe, Shin; Ikeda, Hirokazu; Takahashi, Tadayuki; Furenlid, Lars R.; Barber, H. Bradford

    2016-10-01

    High-quality CdTe semiconductor detectors with both fine position resolution and high energy resolution hold great promise to improve measurement in various hard X-ray and gamma-ray imaging fields. ISAS/JAXA has been developing CdTe imaging detectors to meet scientific demands in latest celestial observation and severe environmental limitation (power consumption, vibration, radiation) in space for over 15 years. The energy resolution of imaging detectors with a CdTe Schottky diode of In/CdTe/Pt or Al/CdTe/Pt contact is a highlight of our development. We can extremely reduce a leakage current of devises, meaning it allows us to supply higher bias voltage to collect charges. The 3.2cm-wide and 0.75mm-thick CdTe double-sided strip detector with a strip pitch of 250 µm has been successfully established and was mounted in the latest Japanese X-ray satellite. The energy resolution measured in the test on ground was 2.1 keV (FWHM) at 59.5 keV. The detector with much finer resolution of 60 µm is ready, and it was actually used in the FOXSI rocket mission to observe hard X-ray from the sun. In this talk, we will focus on our research activities to apply space sensor technologies to such various imaging fields as medical imaging. Recent development of CdTe detectors, imaging module with pinhole and coded-mask collimators, and experimental study of response to hard X-rays and gamma-rays are presented. The talk also includes research of the Compton camera which has a configuration of accumulated Si and CdTe imaging detectors.

  13. Development of Substrate Structure CdTe Photovoltaic Devices with Performance Exceeding 10%: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, R. G.; Duenow, J. N.; DeHart, C. M.; Li, J. V.; Kuciauskas, D.; Gessert, T. A.

    2012-08-01

    Most work on CdTe-based solar cells has focused on devices with a superstrate structure. This focus is due to the early success of the superstrate structure in producing high-efficiency cells, problems of suitable ohmic contacts for lightly doped CdTe, and the simplicity of the structure for manufacturing. The development of the CdCl2 heat treatment boosted CdTe technology and perpetuated the use of the superstrate structure. However, despite the beneficial attributes of the superstrate structure, devices with a substrate structure are attractive both commercially and scientifically. The substrate structure eliminates the need for transparent superstrates and thus allows the use of flexible metal and possibly plastic substrates. From a scientific perspective, it allows better control in forming the junction and direct access to the junction for detailed analysis. Research on such devices has been limited. The efficiency of these devices has been limited to around 8% due to low open-circuit voltage (Voc) and fill factor. In this paper, we present our recent device development efforts at NREL on substrate-structure CdTe devices. We have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. We have worked on a variety of contact materials including Cu-doped ZnTe and CuxTe. We will present a comparative analysis of the performance of these contacts. In addition, we have studied the influence of fabrication parameters on junction properties. We will present an overview of our development work, which has led to CdTe devices with Voc values of more than 860 mV and NREL-confirmed efficiencies approaching 11%.

  14. NUMERICAL SIMULATION AND OPTIMIZATION OF PERFORMANCES OF A SOLAR CELL BASED ON CdTe

    OpenAIRE

    A. M. Ferouani; M. R. Merad Boudia; K. Rahmoun

    2015-01-01

    This article has as an aim the study and the simulation of the photovoltaic cells containing CdTe materials, contributing to the development of renewable energies, and able to feed from the houses, the shelters as well as photovoltaic stations… etc. CdTe is a semiconductor having a structure of bands with an indirect gap of a value of 1,5 eV at ambient temperature what means that photon wavelength of approximately 1200 nm will be able to generate an electron-hole pair. One speaks about photog...

  15. Determination of dispersion parameters of thermally deposited CdTe thin film

    Science.gov (United States)

    Dhimmar, J. M.; Desai, H. N.; Modi, B. P.

    2016-05-01

    Cadmium Telluride (CdTe) thin film was deposited onto glass substrates under a vacuum of 5 × 10-6 torr by using thermal evaporation technique. The prepared film was characterized for dispersion analysis from reflectance spectra within the wavelength range of 300 nm - 1100 nm which was recorded by using UV-Visible spectrophotometer. The dispersion parameters (oscillator strength, oscillator wavelength, high frequency dielectric constant, long wavelength refractive index, lattice dielectric constant and plasma resonance frequency) of CdTe thin film were investigated using single sellimeir oscillator model.

  16. Determination of dispersion parameters of thermally deposited CdTe thin film

    Energy Technology Data Exchange (ETDEWEB)

    Dhimmar, J. M., E-mail: bharatpmodi@gmail.com; Desai, H. N.; Modi, B. P. [Department of Physics, Veer Narmad South Gujarat University, Surat, Gujarat (India)

    2016-05-23

    Cadmium Telluride (CdTe) thin film was deposited onto glass substrates under a vacuum of 5 × 10{sup −6} torr by using thermal evaporation technique. The prepared film was characterized for dispersion analysis from reflectance spectra within the wavelength range of 300 nm – 1100 nm which was recorded by using UV-Visible spectrophotometer. The dispersion parameters (oscillator strength, oscillator wavelength, high frequency dielectric constant, long wavelength refractive index, lattice dielectric constant and plasma resonance frequency) of CdTe thin film were investigated using single sellimeir oscillator model.

  17. Facile aqueous synthesis and growth mechanism of CdTe nanorods

    International Nuclear Information System (INIS)

    Gong Haibo; Hao Xiaopeng; Gao Chang; Wu Yongzhong; Du Jie; Xu Xiangang; Jiang Minhua

    2008-01-01

    Single-crystal CdTe nanorods with diameters of 50-100 nm were synthesized under a surfactant-assisted hydrothermal condition. The experimental results indicated that with a temporal dependence the morphologies of CdTe nanocrystallites changed from nanoparticles to smooth surface nanorods. The crystal structure, morphology and optical properties of the products were investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM) and fluorescence spectrophotometer. Furthermore, the formation mechanisms of the nanorods were investigated and discussed on the basis of the experimental results.

  18. Determination of dispersion parameters of thermally deposited CdTe thin film

    International Nuclear Information System (INIS)

    Dhimmar, J. M.; Desai, H. N.; Modi, B. P.

    2016-01-01

    Cadmium Telluride (CdTe) thin film was deposited onto glass substrates under a vacuum of 5 × 10 −6 torr by using thermal evaporation technique. The prepared film was characterized for dispersion analysis from reflectance spectra within the wavelength range of 300 nm – 1100 nm which was recorded by using UV-Visible spectrophotometer. The dispersion parameters (oscillator strength, oscillator wavelength, high frequency dielectric constant, long wavelength refractive index, lattice dielectric constant and plasma resonance frequency) of CdTe thin film were investigated using single sellimeir oscillator model.

  19. Recent Progress on Solution-Processed CdTe Nanocrystals Solar Cells

    OpenAIRE

    Hao Xue; Rongfang Wu; Ya Xie; Qiongxuan Tan; Donghuan Qin; Hongbin Wu; Wenbo Huang

    2016-01-01

    Solution-processed CdTe nanocrystals (NCs) photovoltaic devices have many advantages, both in commercial manufacture and daily operation, due to the low-cost fabrication process, which becomes a competitive candidate for next-generation solar cells. All solution-processed CdTe NCs solar cells were first reported in 2005. In recent years, they have increased over four-fold in power conversion efficiency. The latest devices achieve AM 1.5 G power conversion efficiency up to 12.0%, values compar...

  20. Compensation models in chlorine doped CdTe based on positron annihilation and photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Stadler, W.; Hofman, D.M.; Meyer, B.K. [Technische Universitaet Muenchen, Garching (Germany); Krause-Rehberg, R.; Polity, A.; Abgarjan, Th. [Martin-Luther Universitaet Halle-Wittenberg, FB Physik, Halle (Germany); Salk, M.; Benz, K.W. [Kristallographisches Institut, Universitaet Freiburg, Freiburg (Germany); Azoulay, M. [Soreq, Nuclear Research Centre, Yavne (Israel)

    1995-12-31

    In this investigation positron annihilation, photoluminescence and electron paramagnetic resonance techniques are employed to gain insight in the compensation of CdTe doped with the halogen Cl. We will demonstrate that the high resistivity of CdTe:Cl cannot be explain by the interaction between the shallow effective mass type donor Cl on Te site and the doping induced shallow acceptor complex, a Cd vacancy paired off with a nearest-neighbour Cl atom (A centre). From electron paramagnetic resonance investigations we conclude that the mid gap trap, often detected by electrical methods in CdTe, is not the isolated Cd vacancy. (author). 9 refs, 2 figs, 1 tab.

  1. Formation of self assembled PbTe quantum dots in CdTe on Si(111)

    Science.gov (United States)

    Felder, F.; Fognini, A.; Rahim, M.; Fill, M.; Müller, E.; Zogg, H.

    2010-01-01

    We describe the growth and formation of self assembled PbTe quantum dots in a CdTe host on a silicon (111) substrate. Annealing yields different photoluminescence spectra depending on initial PbTe layer thickness, thickness of the CdTe cap layer and annealing temperature. Generally two distinct emission peaks at ˜0.3 eV and ˜0.45 eV are visible. Model calculations explaining their temperature dependence are performed. The dot size corresponds well with the estimated sizes from electron microscopy images. The quantum dots may be used as absorber within a mid-infrared detector.

  2. Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gaire, C. [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Rao, S. [Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Riley, M. [Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Chen, L. [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Goyal, A. [Oak Ridge National Lab, Oak ridge, TN, 37831-6116 (United States); Lee, S. [US Army ARDEC Benet Labs, Watervliet, NY, 12189-4050 (United States); Bhat, I. [Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Lu, T.-M. [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States); Wang, G.-C., E-mail: wangg@rpi.edu [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180-3590 (United States)

    2012-01-01

    Single crystal-like CdTe thin film has been grown by metalorganic chemical vapor deposition on cube-textured Ni(100) substrate. Using X-ray pole figure measurements we observed the epitaxial relationship of {l_brace}111{r_brace}{sub CdTe}//{l_brace}001{r_brace}{sub Ni} with [11{sup Macron }0]{sub CdTe}//[010]{sub Ni} and [112{sup Macron }] {sub CdTe}//[100]{sub Ni}. The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 1.6% in the [11{sup Macron }0] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction images show that the CdTe domains are 30 Degree-Sign oriented from each other. These high structural quality films may find applications in low cost optoelectronic devices.

  3. Characterization and photoluminescence studies of CdTe nanoparticles before and after transfer from liquid phase to polystyrene

    International Nuclear Information System (INIS)

    Wang, Shugang; Li, Yaoxian; Bai, Jie; Yang, Qingbiao; Song, Yan; Zhang, Chaoqun

    2009-01-01

    The major objective of this work was to detect the change of photoluminescence (PL) intensity of CdTe nanoparticles (NPs) before and after transfer from liquid phase to polystyrene (PS) matrix by electrospinning technique. Thio-stabilized CdTe NPs were first synthesized in aqueous, then enwrapped by cetyl-trimethylammonium bromide (CTAB), and finally, transferred into PS matrix to form CdTe/PS nanofibres by electrospinning. Then, CdTe/PS nanofibres were characterized by scanning electron microscope (SEM) and transmission electron microscope (TEM) to observe their morphology and distribution, respectively. The selective area electronic diffraction (SAED) pattern proved that the CdTe NPs were cubic lattice. The PL spectrum indicated that CdTe NPs have been transferred into PS nanofibres, and the PL intensity of CdTe NPs in the nanofibres was even higher than that before CdTe NPs were introduced into PS nanofibres. Moreover, X-ray photoelectron spectra (XPS) revealed that thiol-stabilized CdTe NPs were enwrapped by CTAB, and PS acted as a dispersant in the process of electrospinning. (author)

  4. Evaluation of Polarization Effects of e(-) Collection Schottky CdTe Medipix3RX Hybrid Pixel Detector

    OpenAIRE

    Astromskas, V; Gimenez, EN; Lohstroh, A; Tartoni, N

    2016-01-01

    This paper focuses on the evaluation of operational conditions such as temperature, exposure time and flux on the polarization of a Schottky electron collection CdTe detector. A Schottky e- collection CdTe Medipix3RX hybrid pixel detector was developed as a part of the CALIPSO-HIZPAD2 EU project. The 128 ×128 pixel matrix and 0.75 mm thick CdTe sensor bump-bonded to Medipix3RX readout chips enabled the study of the polarization effects. Single and quad module Medipix3RX chips were used which ...

  5. Preparation and performance of thin film CdTe mini-module

    Energy Technology Data Exchange (ETDEWEB)

    Jingquan, Zhang; Lianghuan, Feng; Zhi, Lei; Yaping, Cai; Wei, Li; Lili, Wu; Bing, Li; Wei, Cai; Jiagui, Zheng [College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610064 (China)

    2009-06-15

    The film deposition process and integrated technology of the CdTe mini-module with high efficiency are key steps to manufacture large-area modules. In this paper, CdS, CdTe and ZnTe:Cu films with a substrate area of 7 x 10 cm{sup 2} were deposited by chemical bath deposition, close-spaced sublimation and vacuum co-evaporation, respectively. The uniform films were prepared after their thicknesses, structures and electronic characteristics were studied as the function of deposition parameters. The films of SnO{sub 2}:F, CdTe, etc, were scribed by Kr-lamp-pumped Q-switch YAG:Nd laser. The pumped lamp current, Q-switch frequency and scribing rate were optimized. The scribing efficiency of the base frequency light was compared with that of doubled frequency light. The integrated structure design was optimized after simulating. Then the CdTe mini-module of 7.03% efficiency was gained with a total area of 54 cm{sup 2} and nine integrated elementary cells. (author)

  6. Temperature dependence of dc photoconductivity in CdTe thin films

    Indian Academy of Sciences (India)

    Therefore, it clearly supports the non-existence of physical barrier at CdTe ... presence of potential surface barrier at the electrode–film interface. ... Pradip Kumar Kalita clearly indicates the increase in density of grain boundary states as reported in earlier communication [12]. In these smaller grained films, therefore, the ...

  7. The role of substrate surface alteration in the fabrication of vertically aligned CdTe nanowires

    International Nuclear Information System (INIS)

    Neretina, S; Devenyi, G A; Preston, J S; Mascher, P; Hughes, R A; Sochinskii, N V

    2008-01-01

    Previously we have described the deposition of vertically aligned wurtzite CdTe nanowires derived from an unusual catalytically driven growth mode. This growth mode could only proceed when the surface of the substrate was corrupted with an alcohol layer, although the role of the corruption was not fully understood. Here, we present a study detailing the remarkable role that this substrate surface alteration plays in the development of CdTe nanowires; it dramatically improves the size uniformity and largely eliminates lateral growth. These effects are demonstrated to arise from the altered surface's ability to limit Ostwald ripening of the catalytic seed material and by providing a surface unable to promote the epitaxial relationship needed to sustain a lateral growth mode. The axial growth of the CdTe nanowires is found to be exclusively driven through the direct impingement of adatoms onto the catalytic seeds leading to a self-limiting wire height associated with the sublimation of material from the sidewall facets. The work presented furthers the development of the mechanisms needed to promote high quality substrate-based vertically aligned CdTe nanowires. With our present understanding of the growth mechanism being a combination of selective area epitaxy and a catalytically driven vapour-liquid-solid growth mode, these results also raise the intriguing possibility of employing this growth mode in other material systems in an effort to produce superior nanowires

  8. Investigation of deep level defects in CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Shankar, H.; Castaldini, A. [Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy); Dieguez, E.; Rubio, S. [Crystal Growth Lab, Department of Materials Physics, Faculty of Science, University Autonoma of Madrid, Ciudad Universitaria de Cantoblanco, 28049, Madrid (Spain); Dauksta, E.; Medvid, A. [Institute of Technical Physics, Riga Technical University, 14 Azenes Str, Riga, Latvia, Department of Materials (Latvia); Cavallini, A. [Department of Physics and Astronomy,University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy)

    2014-02-21

    In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 °C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

  9. Studies on interaction between CdTe quantum dots and α ...

    Indian Academy of Sciences (India)

    Administrator

    Fluorescence spectra were measured with a LS-55 (Perkin-Elmer,. USA) spectrofluorimeter equipped with a xenon .... Stern–Volmer dynamic quenching constant and the concentration of quencher CdTe, respectively, kq is ... again that the quenching is not caused by dynamic collision but from the formation of a complex.

  10. Preparation of bioconjugates of CdTe nanocrystals for cancer marker detection

    Energy Technology Data Exchange (ETDEWEB)

    Hu Fengqin [Key Laboratory of Colloid, Interface Science and Chemical Thermodynamics, Molecular Science Center, Institute of Chemistry, Chinese Academy of Sciences, Zhong Guan Cun, Bei Yi Jie 2, Beijing 100080 (China); Ran Yuliang [Department of Cell and Molecular Biology, Cancer Institute, Chinese Academy of Medical Sciences and Peking Union Medical College, Pan Jia Yuan, Chao Yang Qu, Beijing 100021 (China); Zhou Zhuan [Department of Cell and Molecular Biology, Cancer Institute, Chinese Academy of Medical Sciences and Peking Union Medical College, Pan Jia Yuan, Chao Yang Qu, Beijing 100021 (China); Gao Mingyuan [Key Laboratory of Colloid, Interface Science and Chemical Thermodynamics, Molecular Science Center, Institute of Chemistry, Chinese Academy of Sciences, Zhong Guan Cun, Bei Yi Jie 2, Beijing 100080 (China)

    2006-06-28

    Highly fluorescent CdTe quantum dots (Q-dots) stabilized by 3-mercaptopropionic acid (MPA) were prepared by an aqueous solution approach and used as fluorescent labels in detecting a cancer marker, carcinoembryonic antigen (CEA), expressed on human colon carcinoma cell line LS 180. Nonspecific adsorptions of CdTe Q-dots on carcinoma cells were observed and effectively eliminated by replacing MPA with a thiolated PEG (poly(ethylene glycol), Mn = 750) synthesized according to literature. It was unexpectedly found out that the PEG-coated CdTe Q-dots exhibited very strong and specific affinity to anti-CEA monoclonal antibody rch 24 (rch 24 mAb). The resultant CdTe-(rch 24 mAb) conjugates were successfully used in detections of CEA expressed on the surface of cell line LS 180. Further experiments demonstrated that the fluorescent CdTe Q-dots exhibited much better photostability and a brighter fluorescence than FITC, which consequently led to a higher efficiency in the cancer marker detection.

  11. Production and characterization of CdTe films for CdS/CdTe solar cells

    International Nuclear Information System (INIS)

    Pal, A.K.; Chaudhuri, S.

    1988-01-01

    Cadmium telluride is considered as one of the most promising materials in the field of semiconductor devices due to its near ideal band gap for most efficient conversion of solar energy. It can also be prepared in both n and p type forms so that solar cell with homojunction or heterojunction configurations can be obtained. Earlier CdTe was mostly used in single crystal form for device fabrication. But the devices produced were not cost effective. The obvious answer to this problem is to opt for thin film technology for preparing device grade CdTe films. The fundamental problem of producing device grade CdTe films is associated with inherent high resistivity and a low carrier life time. The authors report, in this paper, studies on the CdTe films produced by hot wall vacuum evaporation. The films were deposited onto glass, molybdenum and single crystal NaCl substrates under various experimental conditions. The optimum values of the deposition parameters were uniquely determined to obtain best quality film for the fabrication of the solar cell. The stoichiometry of the film was tested

  12. Three-dimensional defects in CdTe films obtained by pulsed laser deposition

    NARCIS (Netherlands)

    Sagan, P; Virt, IS; Zawislak, J; Rudyj, IO; Kuzma, M

    2004-01-01

    The quality of Cd chalcodenides epitaxial films can be enhanced seriously by applying a pulsed (electron beam or laser beam) method for ablation of targets. The structure of laser deposited CdTe layers was investigated by transmission high energy electron diffraction. This method is very useful for

  13. Studies on interaction between CdTe quantum dots and α ...

    Indian Academy of Sciences (India)

    Administrator

    Studies on interaction between CdTe quantum dots and α-chymotrypsin by molecular spectroscopy. JIANNIAO TIAN. 1. , SHENGZHI WEI. 1. , YANCHUN ZHAO. 1. , RONGJUN LIU. 1 and. SHULIN ZHAO. 2. 1. Key Laboratory for the Chemistry and Molecular Engineering of Medicinal Resources. (Guangxi Normal University) ...

  14. Time resolution improvement of Schottky CdTe PET detectors using digital signal processing

    International Nuclear Information System (INIS)

    Nakhostin, M.; Ishii, K.; Kikuchi, Y.; Matsuyama, S.; Yamazaki, H.; Torshabi, A. Esmaili

    2009-01-01

    We present the results of our study on the timing performance of Schottky CdTe PET detectors using the technique of digital signal processing. The coincidence signals between a CdTe detector (15x15x1 mm 3 ) and a fast liquid scintillator detector were digitized by a fast digital oscilloscope and analyzed. In the analysis, digital versions of the elements of timing circuits, including pulse shaper and time discriminator, were created and a digital implementation of the Amplitude and Rise-time Compensation (ARC) mode of timing was performed. Owing to a very fine adjustment of the parameters of timing measurement, a good time resolution of less than 9.9 ns (FWHM) at an energy threshold of 150 keV was achieved. In the next step, a new method of time pickoff for improvement of timing resolution without loss in the detection efficiency of CdTe detectors was examined. In the method, signals from a CdTe detector are grouped by their rise-times and different procedures of time pickoff are applied to the signals of each group. Then, the time pickoffs are synchronized by compensating the fixed time offset, caused by the different time pickoff procedures. This method leads to an improved time resolution of ∼7.2 ns (FWHM) at an energy threshold of as low as 150 keV. The methods presented in this work are computationally fast enough to be used for online processing of data in an actual PET system.

  15. Comparative study on toxicity of extracellularly biosynthesized and laboratory synthesized CdTe quantum dots

    Czech Academy of Sciences Publication Activity Database

    Komínková, M.; Milosavljevic, V.; Vítek, Petr; Polanská, H.; Číhalová, K.; Dostálová, S.; Hynstová, V.; Guran, R.; Kopel, P.; Richtera, L.; Masarik, M.; Brtnický, M.; Kynický, J.; Zítka, O.; Adam, V.

    2017-01-01

    Roč. 241, JAN (2017), s. 193-200 ISSN 0168-1656 R&D Projects: GA MŠk(CZ) LO1415 Institutional support: RVO:67179843 Keywords : Quantum dots * Biosynthesis * Escherichia coli (E. coli) * CdTe * Toxicity Subject RIV: EI - Biotechnology ; Bionics OBOR OECD: Environmental biotechnology Impact factor: 2.599, year: 2016

  16. Novel Approach to Front Contact Passivation for CdTe Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Kephart, Jason

    2018-02-18

    The goal of this project was to study the use of sputter-deposited oxide materials for interface passivation of CdTe-based photovoltaics. Several candidate materials were chosen based on their promise in passivating the CdTe and CdSeTe semiconductor interface, chemical and thermal stability to device processing, and ability to be deposited by sputter deposition.

  17. Surface plasmon polariton enhanced ultrathin nano-structured CdTe solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Luk, Ting S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Fofang, Nche T. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Cruz-Campa, Jose L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Frank, Ian [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Campione, Salvatore [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies

    2014-08-21

    Here, we demonstrate numerically that two-dimensional arrays of ultrathin CdTe nano-cylinders on Ag can serve as an effective broadband anti-reflection structure for solar cell applications. Such devices exhibit strong absorption properties, mainly in the CdTe semiconductor regions, and can produce short-circuit current densities of 23.4 mA/cm2, a remarkable number in the context of solar cells given the ultrathin dimensions of our nano-cylinders. The strong absorption is enabled via excitation of surface plasmon polaritons (SPPs) under plane wave incidence. In particular, we identified the key absorption mechanism as enhanced fields of the SPP standing waves residing at the interface of CdTe nano-cylinders and Ag. We compare the performance of Ag, Au, and Al substrates, and observe significant improvement when using Ag, highlighting the importance of using low-loss metals. Although we use CdTe here, the proposed approach is applicable to other solar cell materials with similar absorption properties.

  18. Temperature dependence of dc photoconductivity in CdTe thin films

    Indian Academy of Sciences (India)

    Keeping the above aspects in mind, an experimental study on pho- toconductivity processes in pure CdTe thin films ... form of a Faraday caze to keep undesirable noise at minimum. 3. Results and discussion ..... represented in table 1 which show a decreasing trend with increasing ambient temperature. Howeverγ < 1 at any ...

  19. The influence of series resistance on the I-V characteristics of CdTe ...

    African Journals Online (AJOL)

    The influence of series resistance (Rs) on the current (I) – voltage(V) characteristics of evaporated cadmium telluride(CdTe) thin films has been investigated. CdTe films of thickness 1000Å were deposited by thermal evaporation in a vacuum of about 10-5torr. For the I – V measurements, the two point probe configuration ...

  20. Growth techniques used to develop CDS/CDTE thin film solar cells ...

    African Journals Online (AJOL)

    Growth techniques used to develop CDS/CDTE thin film solar cells: a review. ... Techniques such as molecular beam epitaxy (MBE), metal organic chemical vapour deposition (MOCVD) called melt growth or Bridgman are well known as high quality semiconductor growth techniques. One of the limitations of these ...

  1. Synthesis and optical characterization of nanocrystalline CdTe thin films

    Science.gov (United States)

    Al-Ghamdi, A. A.; Khan, Shamshad A.; Nagat, A.; Abd El-Sadek, M. S.

    2010-11-01

    From several years the study of binary compounds has been intensified in order to find new materials for solar photocells. The development of thin film solar cells is an active area of research at this time. Much attention has been paid to the development of low cost, high efficiency thin film solar cells. CdTe is one of the suitable candidates for the production of thin film solar cells due to its ideal band gap, high absorption coefficient. The present work deals with thickness dependent study of CdTe thin films. Nanocrystalline CdTe bulk powder was synthesized by wet chemical route at pH≈11.2 using cadmium chloride and potassium telluride as starting materials. The product sample was characterized by transmission electron microscope, X-ray diffraction and scanning electron microscope. The structural characteristics studied by X-ray diffraction showed that the films are polycrystalline in nature. CdTe thin films with thickness 40, 60, 80 and 100 nm were prepared on glass substrates by using thermal evaporation onto glass substrate under a vacuum of 10 -6 Torr. The optical constants (absorption coefficient, optical band gap, refractive index, extinction coefficient, real and imaginary part of dielectric constant) of CdTe thin films was studied as a function of photon energy in the wavelength region 400-2000 nm. Analysis of the optical absorption data shows that the rule of direct transitions predominates. It has been found that the absorption coefficient, refractive index ( n) and extinction coefficient ( k) decreases while the values of optical band gap increase with an increase in thickness from 40 to 100 nm, which can be explained qualitatively by a thickness dependence of the grain size through decrease in grain boundary barrier height with grain size.

  2. Growth of CdTe on Si(100) surface by ionized cluster beam technique: Experimental and molecular dynamics simulation

    Energy Technology Data Exchange (ETDEWEB)

    Araghi, Houshang, E-mail: araghi@aut.ac.ir [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Zabihi, Zabiholah [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Nayebi, Payman [Department of Physics, College of Technical and Engineering, Saveh Branch, Islamic Azad University, Saveh (Iran, Islamic Republic of); Ehsani, Mohammad Mahdi [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of)

    2016-10-15

    II–VI semiconductor CdTe was grown on the Si(100) substrate surface by the ionized cluster beam (ICB) technique. In the ICB method, when vapors of solid materials such as CdTe were ejected through a nozzle of a heated crucible into a vacuum region, nanoclusters were created by an adiabatic expansion phenomenon. The clusters thus obtained were partially ionized by electron bombardment and then accelerated onto the silicon substrate at 473 K by high potentials. The cluster size was determined using a retarding field energy analyzer. The results of X-ray diffraction measurements indicate the cubic zinc blende (ZB) crystalline structure of the CdTe thin film on the silicon substrate. The CdTe thin film prepared by the ICB method had high crystalline quality. The microscopic processes involved in the ICB deposition technique, such as impact and coalescence processes, have been studied in detail by molecular dynamics (MD) simulation.

  3. A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Liu Yan [Jilin Province Research Center for Engineering and Technology of Spectral Analytical Instruments, Jilin University, Changchun 130023 (China); Shen Qihui; Shi Weiguang; Li Jixue; Liu Xiaoyang [State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012 (China); Yu Dongdong [1st Hopstail affiliated to Jilin University, Jilin University, Changchun 130023 (China); Zhou Jianguang [Research Center for Analytical Instrumentation, Zhejiang University, Hangzhou 310058 (China)], E-mail: liuxy@jlu.edu.cn, E-mail: jgzhou70@126.com

    2008-06-18

    One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

  4. Characterization of the α-SN/CDTE(110) interface by angle-resolved X-ray photoemission

    International Nuclear Information System (INIS)

    Lin, T.S.; Partin, W.J.; Chung, Y.W.

    1987-01-01

    Stoichiometric and atomically clean CdTe(110) surfaces have been prepared by suitable chemical etching, followed by argon sputtering, and sample annealing in ultra-high vacuum. Cubic (α) -tin was grown on CdTe(110) by tin evaporation from a tungsten filament at a substrate temperature of 30 0 C. Angle-resolved X-ray photoelectron spectroscopy (ARXPS) was used to determine the α-Sn growth mechanism and the composition profile of this semiconductor heterostructure nondestructively. From their analyses, the authors conclude that α-Sn grows on CdTe(110) at 30 0 C by a layer by layer mechanism and forms an abrupt junction with CdTe(110)

  5. Hydrothermal synthesis of CdTe QDs: Their luminescence quenching in the presence of bio-molecules and observation of bistable memory effect in CdTe QD/PEDOT:PSS heterostructure

    International Nuclear Information System (INIS)

    Khatei, Jayakrishna; Koteswara Rao, K.S.R.

    2011-01-01

    Highlights: · CdTe QD has been prepared by modified hydrothermal method in room ambient. · Luminescence quenching of CdTe QDs in the presence of bio-molecules demonstrated. · The CdTe QDs shows memory effect (electrical bistability). - Abstract: We report one-pot hydrothermal synthesis of nearly mono-disperse 3-mercaptopropionic acid capped water-soluble cadmium telluride (CdTe) quantum dots (QDs) using an air stable Te source. The optical and electrical characteristics were also studied here. It was shown that the hydrothermal synthesis could be tuned to synthesize nano structures of uniform size close to nanometers. The emissions of the CdTe QDs thus synthesized were in the range of 500-700 nm by varying the duration of synthesis. The full width at half maximum (FWHM) of the emission peaks is relatively narrow (40-90 nm), which indicates a nearly uniform distribution of QD size. The structural and optical properties of the QDs were characterized by transmission electron microscopy (TEM), photoluminescence (PL) and Ultraviolet-visible (UV-Vis) spectroscopy. The photoluminescence quenching of CdTe QDs in the presence of L-cysteine and DNA confirms its biocompatibility and its utility for biosensing applications. The room temperature current-voltage characteristics of QD film on ITO coated glass substrate show an electrically induced switching between states with high and low conductivities. The phenomenon is explained on the basis of charge confinement in quantum dots.

  6. Electrochemical preparation of CdTe semiconductor films from ammoniac-chloride solutions containing 2,2'-dipyridyl

    International Nuclear Information System (INIS)

    Dergacheva, M.B.; Statsyuk, V.N.; Fogel', L.A.

    2007-01-01

    Electrodeposition of CdTe films from ammoniac-chloride buffer electrolytes with 2,2'-dipyridyl additions is studied. Effect of film grains size on light volt-ampere characteristics of CdTe semiconductor compound is studied. Samples prepared from ammoniac-chloride buffer electrolytes with pH 9.2 in the presence of 1· -3 m. 2,2'-dipyridyl demonstrates the best characteristic [ru

  7. Coexistence of optically active radial and axial CdTe insertions in single ZnTe nanowire

    Science.gov (United States)

    Wojnar, P.; Płachta, J.; Zaleszczyk, W.; Kret, S.; Sanchez, Ana M.; Rudniewski, R.; Raczkowska, K.; Szymura, M.; Karczewski, G.; Baczewski, L. T.; Pietruczik, A.; Wojtowicz, T.; Kossut, J.

    2016-03-01

    We report on the growth, cathodoluminescence and micro-photoluminescence of individual radial and axial CdTe insertions in ZnTe nanowires. In particular, the cathodoluminescence technique is used to determine the position of each emitting object inside the nanowire. It is demonstrated that depending on the CdTe deposition temperature, one can obtain an emission either from axial CdTe insertions only, or from both, radial and axial heterostructures, simultaneously. At 350 °C CdTe grows only axially, whereas at 310 °C and 290 °C, there is also significant deposition on the nanowire sidewalls resulting in radial core/shell heterostructures. The presence of Cd atoms on the sidewalls is confirmed by energy dispersive X-ray spectroscopy. Micro-photoluminescence study reveals a strong linear polarization of the emission from both types of heterostructures in the direction along the nanowire axis.We report on the growth, cathodoluminescence and micro-photoluminescence of individual radial and axial CdTe insertions in ZnTe nanowires. In particular, the cathodoluminescence technique is used to determine the position of each emitting object inside the nanowire. It is demonstrated that depending on the CdTe deposition temperature, one can obtain an emission either from axial CdTe insertions only, or from both, radial and axial heterostructures, simultaneously. At 350 °C CdTe grows only axially, whereas at 310 °C and 290 °C, there is also significant deposition on the nanowire sidewalls resulting in radial core/shell heterostructures. The presence of Cd atoms on the sidewalls is confirmed by energy dispersive X-ray spectroscopy. Micro-photoluminescence study reveals a strong linear polarization of the emission from both types of heterostructures in the direction along the nanowire axis. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr08806b

  8. Gamma radiation detectors on the base CdTe for environmental monitoring

    International Nuclear Information System (INIS)

    Bayramov, A.A.; Safarov, N.A.

    2006-01-01

    Full text: The purpose of the given work is development of small - sized dosimeters of gamma - radiation on basis CdTe for definition of a radiations level in an environment and for the control over the illegal moving of radioactive substances. It is supposed, that these dosimeters will replace devices in which as Geiger counters are used. Cadmium telluride (CdTe) is the first material to have been developed as a room-temperature semiconductor detector. Its E g ap of 1,45 eV gives a high enough resistively for room temperature operation, and Z of 48 and 52 gives a higher gamma radiation detection efficiency that either Si (E g ap=1,12 and Z=14) or Ge (E g ap=0,66 and Z=32). Gamma rays and charged particles interact with a solid by converting most of their energy into electron-hole pairs. In scintillators like NaI (Tl) the intensity of the fluorescence arising from these charge carriers is observed with a photomultiplier tube and is proportional to the radiation energy. Semiconductor detectors instead use an electric field to collect the charge carriers and the resulting current pulse is amplified and is proportional to the radiation energy. Polarization effects, which are temporary decrease in either the depleted thickness or the charge collection properties. The primary limitation on increasing E for CdTe detectors is the requirement to avoid excessive noise due to a high leakage current. Low resistively n-type CdTe has resistively between 10 :104 cm, which limits both E and depleted thickness. High resistively CdTe has between 10 6 : 10 1 0 cm. CdTe detectors with between 10 6 : 10 7 cm have been operated at 0 degrees Celcium which reduces the leakage current and allows E to be increased. However, a major disadvantage is the lack of room-temperature operation. High-Z room-temperature detectors have a number of different applications as spectrometers, radiation counters. CdTe provides improved energy-resolution compared to NaI without the need for bulky cooling

  9. Enhanced glutathione content allows the in vivo synthesis of fluorescent CdTe nanoparticles by Escherichia coli.

    Directory of Open Access Journals (Sweden)

    Juan P Monrás

    Full Text Available The vast application of fluorescent semiconductor nanoparticles (NPs or quantum dots (QDs has prompted the development of new, cheap and safer methods that allow generating QDs with improved biocompatibility. In this context, green or biological QDs production represents a still unexplored area. This work reports the intracellular CdTe QDs biosynthesis in bacteria. Escherichia coli overexpressing the gshA gene, involved in glutathione (GSH biosynthesis, was used to produce CdTe QDs. Cells exhibited higher reduced thiols, GSH and Cd/Te contents that allow generating fluorescent intracellular NP-like structures when exposed to CdCl(2 and K(2TeO(3. Fluorescence microscopy revealed that QDs-producing cells accumulate defined structures of various colors, suggesting the production of differently-sized NPs. Purified fluorescent NPs exhibited structural and spectroscopic properties characteristic of CdTe QDs, as size and absorption/emission spectra. Elemental analysis confirmed that biosynthesized QDs were formed by Cd and Te with Cd/Te ratios expected for CdTe QDs. Finally, fluorescent properties of QDs-producing cells, such as color and intensity, were improved by temperature control and the use of reducing buffers.

  10. Matrix-Assisted Laser Desorption Ionization Mass Spectrometry of Compounds Containing Carboxyl Groups Using CdTe and CuO Nanoparticles

    OpenAIRE

    Megumi Sakurai; Taro Sato; Jiawei Xu; Soichi Sato; Tatsuya Fujino

    2018-01-01

    Matrix-assisted laser desorption ionization mass spectrometry of compounds containing carboxyl groups was carried out by using semiconductor nanoparticles (CdTe and CuO) as the matrix. Salicylic acid (Sal), glucuronic acid (Glu), ibuprofen (Ibu), and tyrosine (Tyr) were ionized as deprotonated species (carboxylate anions) by using electrons ejected from CdTe after the photoexcitation. When CuO was used as the matrix, the peak intensity of Tyr became high compared with that obtained with CdTe....

  11. Novel Contact Materials for Improved Performance CdTe Solar Cells Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Rockett, Angus [Colorado School of Mines, Golden, CO (United States); Marsillac, Sylvain [Old Dominion Univ., Norfolk, VA (United States); Collins, Robert [Univesity of Toledo

    2018-04-15

    This program has explored a number of novel materials for contacts to CdTe solar cells in order to reduce the back contact Schottky barrier to zero and produce an ohmic contact. The project tested a wide range of potential contact materials including TiN, ZrN, CuInSe2:N, a-Si:H and alloys with C, and FeS2. Improved contacts were achieved with FeS2. As part of understanding the operation of the devices and controlling the deposition processes, a number of other important results were obtained. In the process of this project and following its conclusion it led to research that resulted in seven journal articles, nine conference publications, 13 talks presented at conferences, and training of eight graduate students. The seven journal articles were published in 2015, 2016, and 2017 and have been cited, as of March 2018, 52 times (one cited 19 times and two cited 11 times). We demonstrated high levels of doping of CIS with N but electrical activity of the resulting N was not high and the results were difficult to reproduce. Furthermore, even with high doping the contacts were not good. Annealing did not improve the contacts. A-Si:H was found to produce acceptable but unstable contacts, degrading even over a day or two, apparently due to H incorporation into the CdTe. Alloying with C did not improve the contacts or stability. The transition metal nitrides produced Schottky type contacts for all materials tested. While these contacts were found to be unsatisfactory, we investigated FeS2 and found this material to be effective and comparable to the best contacts currently available. The contacts were found to be chemically stable under heat treatment and preferable to Cu doped contacts. Thus, we demonstrated an improved contact material in the course of this project. In addition, we developed new ways of controlling the deposition of CdTe and other materials, demonstrated the nature of defects in CdTe, and studied the distribution of conductivity and carrier type in CdTe

  12. CdTe quantum dots with daunorubicin induce apoptosis of multidrug-resistant human hepatoma HepG2/ADM cells: in vitro and in vivo evaluation

    Directory of Open Access Journals (Sweden)

    Shi Lixin

    2011-01-01

    Full Text Available Abstract Cadmium telluride quantum dots (Cdte QDs have received significant attention in biomedical research because of their potential in disease diagnosis and drug delivery. In this study, we have investigated the interaction mechanism and synergistic effect of 3-mercaptopropionic acid-capped Cdte QDs with the anti-cancer drug daunorubicin (DNR on the induction of apoptosis using drug-resistant human hepatoma HepG2/ADM cells. Electrochemical assay revealed that Cdte QDs readily facilitated the uptake of the DNR into HepG2/ADM cells. Apoptotic staining, DNA fragmentation, and flow cytometry analysis further demonstrated that compared with Cdte QDs or DNR treatment alone, the apoptosis rate increased after the treatment of Cdte QDs together with DNR in HepG2/ADM cells. We observed that Cdte QDs treatment could reduce the effect of P-glycoprotein while the treatment of Cdte QDs together with DNR can clearly activate apoptosis-related caspases protein expression in HepG2/ADM cells. Moreover, our in vivo study indicated that the treatment of Cdte QDs together with DNR effectively inhibited the human hepatoma HepG2/ADM nude mice tumor growth. The increased cell apoptosis rate was closely correlated with the enhanced inhibition of tumor growth in the studied animals. Thus, Cdte QDs combined with DNR may serve as a possible alternative for targeted therapeutic approaches for some cancer treatments.

  13. Improvement of the sensitivity of CdTe detectors in the high energy regions

    Energy Technology Data Exchange (ETDEWEB)

    Nishizawa, Hiroshi; Ikegami, Kazunori; Takashima, Kazuo; Usami, Teruo [Mitsubishi Electric Corp., Tokyo (Japan); Yamamoto, Takayoshi

    1996-07-01

    In order to improve the efficiency of the full energy peak in the high energy regions, we had previously suggested a multi-layered structure of CdTe elements and have since confirmed the sensitivity improvement of the full energy peak. And furthermore, we have suggested a new type structure of multi-layered elements in this paper and we confirmed that the efficiency of the full energy peak became higher and that more proper energy spectra were obtained by our current experiment than by the detector with the conventional structure. This paper describes a simulation and experiment to improve the efficiency of the full energy peak and to obtain the more proper energy spectra of {sup 137}Cs (662keV) and {sup 60}Co (1.17 and 1.33MeV) using the new structure of CdTe detector. (J.P.N.)

  14. CdTe quantum dot as a fluorescence probe for vitamin B12 in dosage form

    Science.gov (United States)

    Vaishnavi, E.; Renganathan, R.

    2013-11-01

    We here report the CdTe quantum dot (CdTe QDs)-based sensor for probing vitamin B12 derivatives in aqueous solution. In this paper, simple and sensitive fluorescence quenching measurements has been employed. The Stern-Volmer constant (KSV), quenching rate constant (kq) and binding constant (K) were rationalized from fluorescence quenching measurement. Furthermore, the fluorescence resonance energy transfer (FRET) mechanism was discussed. This method was applicable over the concentration ranging from 1 to 14 μg/mL (VB12) with correlation coefficient of 0.993. The limit of detection (LOD) of VB12 was found to be 0.15 μg/mL. Moreover, the present approach opens a simple pathway for developing cost-effective, sensitive and selective QD-based fluorescence sensors/probes for biologically significant VB12 in pharmaceutical sample with mean recoveries in the range of 100-102.1%.

  15. CdTe and Cd1-xZnxTe for nuclear detectors: facts and fictions

    International Nuclear Information System (INIS)

    Fougeres, P.; Siffert, P.; Hageali, M.; Koebel, J.M.; Regal, R.

    1999-01-01

    Both CdTe and Cd 1-x Zn x Te (CZT) can be considered from their physical properties as very good materials for room temperature X- and γ-rays detection. However, despite years of intense material research, no significant advance has been made to help one to choose between both semiconductors. This paper reviews a few facts about CdTe and CZT to attempt to draw a real comparison between both. THM-CdTe and HPB-CZT have been grown and characterized in Strasbourg. Crystal growth, alloying effects, transport properties and defects are reviewed on the basis of our results and the published ones. The results show that it is still very difficult to claim which one is the best

  16. High performance p-i-n CdTe and CdZnTe detectors

    CERN Document Server

    Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

    1999-01-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  17. Deposition and properties of CdTe nanowires prepared by template replication

    International Nuclear Information System (INIS)

    Enculescu, Ionut; Sima, Marian; Enculescu, Monica; Enache, Mihaela; Ion, Lucian; Antohe, Stefan; Neumann, Reinhard

    2007-01-01

    We used the template method to prepare CdTe wires with diameters ranging from 80 nm to 1 μm. As templates we used polycarbonate and polyethilene terephtalate ion track membranes and as the method of filling the pores of such membranes we employed electrochemical deposition. The conditions (i.e. bath composition and deposition potential) necessary to obtain the stoichiometric composition of the semiconductor were found. Scanning and transmission electron microscopy were employed for morphological characterization of the nano and microwires. Energy dispersive X-ray analysis was employed for determining the Cd/Te ratio. Selected area electron diffraction was employed for structural measurements. Reflection spectroscopy measurements were performed on nanowire arrays for determining the band gap of the deposited nanostructures. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Photoluminescence Imaging of Large-Grain CdTe for Grain Boundary Characterization

    Energy Technology Data Exchange (ETDEWEB)

    Johnston, Steve; Allende Motz, Alyssa; Reese, Matthew O.; Burst, James M.; Metzger, Wyatt K.

    2015-06-14

    In this work, we use photoluminescence (PL) imaging to characterize CdTe grain boundary recombination. We use a silicon megapixel camera and green (532 nm) laser diodes for excitation. A microscope objective lens system is used for high spatial resolution and a field of view down to 190 um x 190 um. PL images of large-grain (5 to 50 um) CdTe samples show grain boundary and grain interior features that vary with processing conditions. PL images of samples in the as-deposited state show distinct dark grain boundaries that suggest high excess carrier recombination. A CdCl2 treatment leads to PL images with very little distinction at the grain boundaries, which illustrates the grain boundary passivation properties. Other process conditions are also shown, along with comparisons of PL images to high spatial resolution time-resolved PL carrier lifetime maps.

  19. Photoinduced interaction between MPA capped CdTe QDs and certain anthraquinone dyes

    Energy Technology Data Exchange (ETDEWEB)

    Jagadeeswari, S.; Asha Jhonsi, M.; Kathiravan, A. [School of Chemistry, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India); Renganathan, R., E-mail: rrengas@gmail.co [School of Chemistry, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India)

    2011-04-15

    Photoinduced interaction of mercapto propionic acid (MPA) capped CdTe quantum dots (QDs) with certain anthraquinone dyes namely alizarin, alizarin red S, acid blue 129 and uniblue has been studied by steady state and time resolved fluorescence measurements. Addition of anthraquinone dyes to CdTe QDs results in the reduction of electron hole recombination has been observed (i.e., fluorescence quenching). The Stern-Volmer constant (K{sub SV}), quenching rate constant (k{sub q}) and association constants (K) were obtained from fluorescence quenching data. The interaction of anthraquinone dyes with QDs occurs through static quenching was confirmed by unaltered fluorescence lifetime. The occurrence of electron transfer quenching mechanism has been proved by the negative free energy change ({Delta}G{sub et}) obtained as per the Rehm-Weller equation.

  20. Growth and optical properties of CdTe quantum dots in ZnTe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wojnar, Piotr; Janik, Elzbieta; Baczewski, Lech T.; Kret, Slawomir; Karczewski, G.; Wojtowicz, Tomasz [Institute of Physics, Polish Academy of Sciences, Al Lotnikow 32/46, 02-668 Warsaw (Poland); Goryca, Mateusz; Kazimierczuk, Tomasz; Kossacki, Piotr [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland)

    2011-09-12

    We report on the formation of optically active CdTe quantum dots in ZnTe nanowires. The CdTe/ZnTe nanostructures have been grown by a gold nanocatalyst assisted molecular beam epitaxy in a vapor-liquid solid growth process. The presence of CdTe insertions in ZnTe nanowire results in the appearance of a strong photoluminescence band in the 2.0 eV-2.25 eV energy range. Spatially resolved photoluminescence measurements reveal that this broad emission consists of several sharp lines with the spectral width of about 2 meV. The large degree of linear polarization of these individual emission lines confirms their nanowire origin, whereas the zero-dimensional confinement is proved by photon correlation spectroscopy.

  1. Optical Properties of Al- and Sb-Doped CdTe Thin Films

    Directory of Open Access Journals (Sweden)

    A. A. J. Al-Douri

    2010-01-01

    Full Text Available Nondoped and (Al, Sb-doped CdTe thin films with 0.5, 1.5, and 2.5  wt.%, respectively, were deposited by thermal evaporation technique under vacuum onto Corning 7059 glass at substrate temperatures ( of room temperature (RT and 423 K. The optical properties of deposited CdTe films such as band gap, refractive index (n, extinction coefficient (, and dielectric coefficients were investigated as function of Al and Sb wt.% doping, respectively. The results showed that films have direct optical transition. Increasing and the wt.% of both types of dopant, the band gap decrease but the optical is constant as n, and real and imaginary parts of the dielectric coefficient increase.

  2. Sputter-Deposited Oxides for Interface Passivation of CdTe Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Kephart, Jason M.; Kindvall, Anna; Williams, Desiree; Kuciauskas, Darius; Dippo, Pat; Munshi, Amit; Sampath, W. S.

    2018-03-01

    Commercial CdTe PV modules have polycrystalline thin films deposited on glass, and devices made in this format have exceeded 22% efficiency. Devices made by the authors with a magnesium zinc oxide window layer and tellurium back contact have achieved efficiency over 18%, but these cells still suffer from an open-circuit voltage far below ideal values. Oxide passivation layers made by sputter deposition have the potential to increase voltage by reducing interface recombination. CdTe devices with these passivation layers were studied with photoluminescence (PL) emission spectroscopy and time-resolved photoluminescence (TRPL) to detect an increase in minority carrier lifetime. Because these oxide materials exhibit barriers to carrier collection, micropatterning was used to expose small point contacts while still allowing interface passivation. TRPL decay lifetimes have been greatly enhanced for thin polycrystalline absorber films with interface passivation. Device performance was measured and current collection was mapped spatially by light-beam-induced current.

  3. Fabrication of fluorescent composite with ultrafast aqueous synthesized high luminescent CdTe quantum dots

    International Nuclear Information System (INIS)

    Zhang, Lei; Chen, Haibin; Wu, Jingshen; Bi, Xianghong

    2014-01-01

    Without precursor preparation, inert gas protection and enormous amount of additives and reductants, CdTe quantum dots (QDs) can be rapidly synthesized with high quality. A 600 nm photoluminescence peak wavelength could be obtained within 1 hour's refluxing through minimal addition of 1,2-diaminoethane (DAE). The theoretical design for the experiments are illustrated and further proved by the characterization results with different concentrations and reagents. On the other hand, generation of CdTe QDs was found even under room temperature by applying droplet quantity of DAE. This indicates that QDs can be synthesized with simply a bottle and no enormous additives required. The QDs were mixed into the epoxy matrix through solution casting method with cetyltrimethylammonium (CTA) capping for phase transfer. The acquired epoxy based nanocomposite exhibits good transparency, compatibility and fluorescence

  4. Understanding arsenic incorporation in CdTe with atom probe tomography

    Energy Technology Data Exchange (ETDEWEB)

    Burton, G. L.; Diercks, D. R.; Ogedengbe, O. S.; Jayathilaka, P. A. R. D.; Edirisooriya, M.; Myers, T. H.; Zaunbrecher, K. N.; Moseley, J.; Barnes, T. M.; Gorman, B. P.

    2018-08-01

    Overcoming the open circuit voltage deficiency in Cadmium Telluride (CdTe) photovoltaics may be achieved by increasing p-type doping while maintaining or increasing minority carrier lifetimes. Here, routes to higher doping efficiency using arsenic are explored through an atomic scale understanding of dopant incorporation limits and activation in molecular beam epitaxy grown CdTe layers. Atom probe tomography reveals spatial segregation into nanometer scale clusters containing > 60 at% As for samples with arsenic incorporation levels greater than 7-8 x 10^17 cm-3. The presence of arsenic clusters was accompanied by crystal quality degradation, particularly the introduction of arsenic-enriched extended defects. Post-growth annealing treatments are shown to increase the size of the As precipitates and the amount of As within the precipitates.

  5. Applications of CdTe to nuclear medicine. Annual report, February 1, 1979-January 31, 1980

    International Nuclear Information System (INIS)

    Entine, G.

    1980-01-01

    The application of CdTe gamma detectors in nuclear medicine is reported on. An internal probe was developed which can be inserted into the heart to measure the efficiency of various radiopharmaceuticals in the treatment of heart attacks. A second application is an array of detectors which is light enough to be worn by ambulatory patients and can measure the change in cardiac output over an eight hour period during heart attack treatment. The instrument includes an on board tape recorder

  6. Edge effects in a small pixel CdTe for X-ray imaging

    Science.gov (United States)

    Duarte, D. D.; Bell, S. J.; Lipp, J.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.; Kachkanov, V.; Sawhney, K. J. S.

    2013-10-01

    Large area detectors capable of operating with high detection efficiency at energies above 30 keV are required in many contemporary X-ray imaging applications. The properties of high Z compound semiconductors, such as CdTe, make them ideally suitable to these applications. The STFC Rutherford Appleton Laboratory has developed a small pixel CdTe detector with 80 × 80 pixels on a 250 μm pitch. Historically, these detectors have included a 200 μm wide guard band around the pixelated anode to reduce the effect of defects in the crystal edge. The latest version of the detector ASIC is capable of four-side butting that allows the tiling of N × N flat panel arrays. To limit the dead space between modules to the width of one pixel, edgeless detector geometries have been developed where the active volume of the detector extends to the physical edge of the crystal. The spectroscopic performance of an edgeless CdTe detector bump bonded to the HEXITEC ASIC was tested with sealed radiation sources and compared with a monochromatic X-ray micro-beam mapping measurements made at the Diamond Light Source, U.K. The average energy resolution at 59.54 keV of bulk and edge pixels was 1.23 keV and 1.58 keV, respectively. 87% of the edge pixels present fully spectroscopic performance demonstrating that edgeless CdTe detectors are a promising technology for the production of large panel radiation detectors for X-ray imaging.

  7. Applications of CdTe to nuclear medicine. Annual report, February 1, 1979-January 31, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Entine, G

    1980-01-01

    The application of CdTe gamma detectors in nuclear medicine is reported on. An internal probe was developed which can be inserted into the heart to measure the efficiency of various radiopharmaceuticals in the treatment of heart attacks. A second application is an array of detectors which is light enough to be worn by ambulatory patients and can measure the change in cardiac output over an eight hour period during heart attack treatment. The instrument includes an on board tape recorder. (ACR)

  8. High luminescent L-cysteine capped CdTe quantum dots prepared at different reaction times

    Science.gov (United States)

    Kiprotich, Sharon; Onani, Martin O.; Dejene, Francis B.

    2018-04-01

    This paper reports a facile synthesis route of high luminescent L-cysteine capped CdTe quantum dots (QDs). The effect of reaction time on the growth mechanism, optical and physical properties of the CdTe QDs was investigated in order to find the suitability of them towards optical and medical applications. The representative high-resolution transmission microscopy (HRTEM) analysis showed that the as-obtained CdTe QDs appeared as spherical particles with excellent monodispersity. The images exhibited clear lattice fringes which are indicative of good crystallinity. The X-ray diffraction (XRD) pattern displayed polycrystalline nature of the QDs which correspond well to zinc blende phase of bulk CdTe. The crystallite sizes calculated from the Scherrer equation were less than 10 nm for different reaction times which were in close agreement with the values estimated from HRTEM. An increase in reaction time improved crystallinity of the sample as explained by highest peak intensity of the XRD supported by the photoluminescence emission spectra which showed high intensity at a longer growth time. It was observed that for prolonged growth time the emission bands were red shifted from about 517-557 nm for 5-180 min of reaction time due to increase in particle sizes. Ultraviolet and visible analysis displayed well-resolved absorption bands which were red shifted upon an increase in reaction time. There was an inverse relation between the band gap and reaction time. Optical band gap decreases from 3.98 to 2.59 eV with the increase in reaction time from 15 to 180 min.

  9. Switchable photoluminescence of CdTe nanocrystals by temperature-responsive microgels

    Czech Academy of Sciences Publication Activity Database

    Agrawal, M.; Rubio-Retama, J.; Zafeiropoulos, N. E.; Gaponik, N.; Gupta, S.; Cimrová, Věra; Lesnyak, V.; López-Cabarcos, E.; Tzavalas, S.; Rojas-Reyna, R.; Eychmuller, A.; Stamm, M.

    2008-01-01

    Roč. 24, č. 17 (2008), s. 9820-9824 ISSN 0743-7463 R&D Projects: GA AV ČR IAA4050409; GA MŠk(CZ) 1M06031 Institutional research plan: CEZ:AV0Z40500505 Keywords : switchable photoluminescence * temperature-responsive microgels * CdTe nanocrystals Subject RIV: CD - Macromolecular Chemistry Impact factor: 4.097, year: 2008

  10. Performance and Metastability of CdTe Solar Cells with a Te Back-Contact Buffer Layer

    Science.gov (United States)

    Moore, Andrew

    Thin-film CdTe photovoltaics are quickly maturing into a viable clean-energy solution through demonstration of competitive costs and performance stability with existing energy sources. Over the last half decade, CdTe solar technology has achieved major gains in performance; however, there are still aspects that can be improved to progress toward their theoretical maximum efficiency. Perhaps equally valuable as high photovoltaic efficiency and a low levelized cost of energy, is device reliability. Understanding the root causes for changes in performance is essential for accomplishing long-term stability. One area for potential performance enhancement is the back contact of the CdTe device. This research incorporated a thin-film Te-buffer layer into the contact structure, between the CdTe and contact metal. The device performance and characteristics of many different back contact configurations were rigorously studied. CdTe solar cells fabricated with the Te-buffer contact showed short-circuit current densities and open-circuit voltages that were on par with the traditional back-contacts used at CSU. However, the Te-buffer contact typically produced 2% larger fill-factors on average, leading to greater conversation efficiency. Furthermore, using the Te buffer allowed for incorporation of 50% less Cu, which is used for p-type doping but is also known to decrease lifetime and stability. This resulted in an additional 3% fill-factor gain with no change in other parameters compared to the standard-Cu treated device. In order to better understand the physical mechanisms of the Te-buffer contact, electrical and material properties of the Te layer were extracted and used to construct a simple energy band diagram. The Te layer was found to be highly p-type (>1018 cm-3) and possess a positive valence-band offset of 0.35-0.40 eV with CdTe. An existing simulation model incorporating the Te-layer properties was implemented and validated by comparing simulated results of CdTe

  11. Synthesis and characterization of CdTe nanostructures grown by RF magnetron sputtering method

    Science.gov (United States)

    Akbarnejad, Elaheh; Ghoranneviss, Mahmood; Hantehzadeh, Mohammad Reza

    2017-08-01

    In this paper, we synthesize Cadmium Telluride nanostructures by radio frequency (RF) magnetron sputtering system on soda lime glass at various thicknesses. The effect of CdTe nanostructures thickness on crystalline, optical and morphological properties has been studied by means of X-ray diffraction (XRD), UV-VIS-NIR spectrophotometry, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. The XRD parameters of CdTe nanostructures such as microstrain, dislocation density, and crystal size have been examined. From XRD analysis, it could be assumed that increasing deposition time caused the formation of the wurtzite hexagonal structure of the sputtered films. Optical properties of the grown nanostructures as a function of film thickness have been observed. All the films indicate more than 60% transmission over a wide range of wavelengths. The optical band gap values of the films have obtained in the range of 1.62-1.45 eV. The results indicate that an RF sputtering method succeeded in depositing of CdTe nanostructures with high purity and controllable physical properties, which is appropriate for photovoltaic and nuclear detector applications.

  12. Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation

    Science.gov (United States)

    Simonds, Brian J.; Kheraj, Vipul; Palekis, Vasilios; Ferekides, Christos; Scarpulla, Michael A.

    2015-06-01

    Laser processing of polycrystalline CdTe is a promising approach that could potentially increase module manufacturing throughput while reducing capital expenditure costs. For these benefits to be realized, the basic effects of laser irradiation on CdTe must be ascertained. In this study, we utilize surface photovoltage spectroscopy (SPS) to investigate the changes to the electronic properties of the surface of polycrystalline CdTe solar cell stacks induced by continuous-wave laser annealing. The experimental data explained within a model consisting of two space charge regions, one at the CdTe/air interface and one at the CdTe/CdS junction, are used to interpret our SPS results. The frequency dependence and phase spectra of the SPS signal are also discussed. To support the SPS findings, low-temperature spectrally-resolved photoluminescence and time-resolved photoluminescence were also measured. The data show that a modest laser treatment of 250 W/cm2 with a dwell time of 20 s is sufficient to reduce the effects of Fermi level pinning at the surface due to surface defects.

  13. Strain relaxation of CdTe on Ge studied by medium energy ion scattering

    Energy Technology Data Exchange (ETDEWEB)

    Pillet, J.C., E-mail: jean-christophe.pillet@cea.fr [Univ. Grenoble Alpes, CEA, LETI, MINATEC campus, F38000 Grenoble (France); CEA, LETI, Département Optique et Photonique, F38054 Grenoble (France); Pierre, F. [Univ. Grenoble Alpes, CEA, LETI, MINATEC campus, F38000 Grenoble (France); CEA, LETI, Service de Caractérisation des Matériaux et Composants, F38054 Grenoble (France); Jalabert, D. [Univ. Grenoble Alpes, CEA, LETI, MINATEC campus, F38000 Grenoble (France); CEA-INAC/UJF-Grenoble 1 UMR-E, SP2M, LEMMA, Minatec Grenoble F-38054 (France)

    2016-10-01

    We have used the medium energy ion scattering (MEIS) technique to assess the strain relaxation in molecular-beam epitaxial (MBE) grown CdTe (2 1 1)/Ge (2 1 1) system. A previous X-ray diffraction study, on 10 samples of the same heterostructure having thicknesses ranging from 25 nm to 10 μm has allowed the measurement of the strain relaxation on a large scale. However, the X-ray diffraction measurements cannot achieve a stress measurement in close proximity to the CdTe/Ge interface at the nanometer scale. Due to the huge lattice misfit between the CdTe and Ge, a high degree of disorder is expected at the interface. The MEIS in channeling mode is a good alternative in order to profile defects with a high depth resolution. For a 21 nm thick CdTe layer, we observed, at the interface, a high density of Cd and/or Te atoms moved from their expected crystallographic positions followed by a rapid recombination of defects. Strain relaxation mechanisms in the vicinity of the interface are discussed.

  14. ZnS shell growth on thiol capped CdTe quantum dots using gamma irradiation

    Science.gov (United States)

    Raju, S. P.; Hareesh, K.; Pai, S. Chethan; Dhole, S. D.; Sanjeev, Ganesh

    2017-05-01

    The formation of ZnS shell on 3-Mercaptopropionic acid (MPA) capped CdTe quantum dots (QDs) using gamma radiation has been reported in this study. Hydrothermally synthesized CdTe QDs were exposed to gamma radiation before and after introducing shell source materials (Zn+MPA complex). The gamma rays exposed samples were characterized using UV-Vis spectroscopy, Photoluminescence spectroscopy (PL) and X-Ray Diffraction (XRD) techniques. The redshift in absorption spectra for gamma irradiated samples indicates the formation of bigger nanoparticles as the shell stretched the core size. The shift in the XRD peaks (cubic zinc blade structure) towards higher angle reveals the formation of MPA capped CdTe/ZnS core/shell QDs against gamma radiation. The variation in PL spectra also followed the same redshift corroborating the UV-Vis and XRD results. The increase in PL intensity only after introducing shell source material against gamma radiation clearly confirms ZnS shell saturated the surface dangling bonds by increasing radiative decay mechanism over CdTe core surface.

  15. Fabrication and performance of p-i-n CdTe radiation detectors

    CERN Document Server

    Niraula, M; Aoki, T; Tomita, Y; Nihashi, T; Hatanaka, Y

    1999-01-01

    We report on the fabrication and performance of CdTe radiation detectors in a new p-i-n structure which helps to reduce the leakage current to a minimum level. Chlorine-doped single-crystal CdTe substrates having resistivity in the order of 10 sup 9 OMEGA cm were used in this study. Iodine-doped n-type CdTe layers were grown homoepitaxially on one face of each crystals using the hydrogen plasma-radical-assisted metalorganic chemical vapor deposition technique at low substrate temperature of 150 deg. C. Indium electrode was evaporated on the n-CdTe side while a gold electrode on the opposite side acted as a p-type contact. Detectors thus fabricated exhibited low leakage current (below 0.4 nA/mm sup 2 at 250 V applied reverse bias for the best one) and good performance at room temperature. Spectral response of the detectors showed improved energy resolution for Am-241, Co-57, and Cs-137 radioisotopes. Detectors were further tested with X-ray photons of different intensities for their potential application in im...

  16. Comparison of structural properties of thermally evaporated CdTe thin films on different substrates

    International Nuclear Information System (INIS)

    Tariq, G.H.; Anis-ur-Rehman, M.

    2011-01-01

    The direct energy band gap in the range of 1.5 eV and the high absorption coefficient (105 cm/sup -1/) makes Cadmium Telluride (CdTe) a suitable material for fabrication of thin film solar cells. Thin film solar cells based on CdTe (1 cm area) achieved efficiency of 15.6% on a laboratory scale. CdTe thin films were deposited by thermal evaporation technique under vacuum 2 X 10/sup -5/mbar on glass and stainless steel (SS) substrates. During deposition substrates temperature was kept same at 200 deg. C for all samples. The structural properties were determined by the X-ray Diffraction (XRD) patterns. All samples exhibit polycrystalline nature. Dependence of different structural parameters such as lattice parameter, micro strain, and grain size and dislocation density on thickness was studied. Also the influence of the different substrates on these parameters was investigated. The analysis showed that the preferential orientation of films was dependent on the substrate type. (author)

  17. Enhancement in microstructural and optoelectrical properties of thermally evaporated CdTe films for solar cells

    Directory of Open Access Journals (Sweden)

    Subhash Chander

    2018-03-01

    Full Text Available The optimization of microstructural and optoelectrical properties of a thin layer is an important step prior device fabrication process, so an enhancement in these properties of thermally evaporated CdTe thin films is reported in this communication. The films having thickness 450 nm and 850 nm were deposited on thoroughly cleaned glass and indium tin oxide (ITO substrates followed by annealing at 450 °C in air atmosphere. These films were characterized for microstructural and optoelectrical properties employing X-ray diffraction, scanning electron microscopy coupled with energy-dispersive spectroscopy, UV-Vis spectrophotometer and source meter. The films found to be have zinc-blende cubic structure with preferred reflection (111 while the crystallographic parameters and direct energy band gap are strongly influenced by the film thickness. The surface morphology studies show that the films are uniform, smooth, homogeneous and nearly dense-packed as well as free from voids and pitfalls as where elemental analysis revealed the presence of Cd and Te element in the deposited films. The electrical analysis showed linear behavior of current with voltage while conductivity is decreased for higher thickness. The results show that the microstructural and optoelectrical properties of CdTe thin layer could be enhanced by varying thickness and films having higher thickness might be processed as promising absorber thin layer to the CdTe-based solar cells. Keywords: CdTe thin film, Microstructural, Optoelectrical, Thermal evaporation

  18. Prototype of high resolution PET using resistive electrode position sensitive CdTe detectors

    International Nuclear Information System (INIS)

    Kikuchi, Yohei; Ishii, Keizo; Matsuyama, Shigeo; Yamazaki, Hiromichi

    2008-01-01

    Downsizing detector elements makes it possible that spatial resolutions of positron emission tomography (PET) cameras are improved very much. From this point of view, semiconductor detectors are preferable. To obtain high resolution, the pixel type or the multi strip type of semiconductor detectors can be used. However, in this case, there is a low packing ratio problem, because a dead area between detector arrays cannot be neglected. Here, we propose the use of position sensitive semiconductor detectors with resistive electrode. The CdTe detector is promising as a detector for PET camera because of its high sensitivity. In this paper, we report development of prototype of high resolution PET using resistive electrode position sensitive CdTe detectors. We made 1-dimensional position sensitive CdTe detectors experimentally by changing the electrode thickness. We obtained 750 A as an appropriate thickness of position sensitive detectors, and evaluated the performance of the detector using a collimated 241 Am source. A good position resolution of 1.2 mm full width half maximum (FWHM) was obtained. On the basis of the fundamental development of resistive electrode position sensitive detectors, we constructed a prototype of high resolution PET which was a dual head type and was consisted of thirty-two 1-dimensional position sensitive detectors. In conclusion, we obtained high resolutions which are 0.75 mm (FWHM) in transaxial, and 1.5 mm (FWHM) in axial. (author)

  19. Spectral correction algorithm for multispectral CdTe x-ray detectors

    Science.gov (United States)

    Christensen, Erik D.; Kehres, Jan; Gu, Yun; Feidenhans'l, Robert; Olsen, Ulrik L.

    2017-09-01

    Compared to the dual energy scintillator detectors widely used today, pixelated multispectral X-ray detectors show the potential to improve material identification in various radiography and tomography applications used for industrial and security purposes. However, detector effects, such as charge sharing and photon pileup, distort the measured spectra in high flux pixelated multispectral detectors. These effects significantly reduce the detectors' capabilities to be used for material identification, which requires accurate spectral measurements. We have developed a semi analytical computational algorithm for multispectral CdTe X-ray detectors which corrects the measured spectra for severe spectral distortions caused by the detector. The algorithm is developed for the Multix ME100 CdTe X-ray detector, but could potentially be adapted for any pixelated multispectral CdTe detector. The calibration of the algorithm is based on simple attenuation measurements of commercially available materials using standard laboratory sources, making the algorithm applicable in any X-ray setup. The validation of the algorithm has been done using experimental data acquired with both standard lab equipment and synchrotron radiation. The experiments show that the algorithm is fast, reliable even at X-ray flux up to 5 Mph/s/mm2, and greatly improves the accuracy of the measured X-ray spectra, making the algorithm very useful for both security and industrial applications where multispectral detectors are used.

  20. Impacts of Temperature on the Performance of Cdte Based Thin-Film Solar Cell

    Science.gov (United States)

    Asaduzzaman, Md.; Newaz Bahar, Ali; Maksudur Rahman Bhuiyan, Mohammad; Habib, Md. Ahsan

    2017-08-01

    In this investigation, the effect of temperature on the performance of CdTe based thin film solar cells has been studied. The parameters such as open circuit voltage (Voc ), short circuit current density (Jsc ), fill factor and efficiency η determines the performance of solar cell. And an important diode parameter, reverse saturation current density, J 0 controls the impacts of temperature on the performance parameters. The reverse saturation current density of the CdTe photovoltaic cell, J 0 = CT 3exp(-qEg /kT) was determinedas optimum for C = 17.90 mAcm -2 K 3 yields CT 3 = 4.74 × 108 mAcm -2. In this case, 298 K is considered to be more suitable temperature to achieve optimized Voc, Jsc, FF, and η calculated for AM1.5G illumination spectra. The maximum attained values of performance parameters are compared with the experimental and theoretical results in the literature of CdTe solar cells. Moreover, the rate of change in performance parameters due to temperature are also measured and compared with the results available in the earlier published works.

  1. Preparation of ultra-high purity CdTe single crystals

    International Nuclear Information System (INIS)

    Wang, J.F.; Song, S.H.; Ishikawa, Y.; Isshiki, M.

    2005-01-01

    High-purity and quality CdTe single crystals are very important for their basic study, as well as practical applications. For this reason, Cd was purified by vacuum distillation (VD) and overlap zone-melting (OZM) method, and Te was purified by normal freezing method. Refined Cd was evaluated by glow discharge mass spectroscopy (GDMS) and residual resistivity ratio (RRR) measurement and Te was evaluated by low-temperature photoluminescence (PL) spectra. Results showed that refined Cd and Te have the purity of 6N-up. Using the refined Cd and Te as starting materials, extremely high-purity CdTe single crystals were prepared by the traditional vertical Bridgman technique. The crystals were characterized by low temperature high-resolution PL spectroscopy. Only a sharp peak at 1.5896 eV was detected in exciton emission region. The full width at half-maximum (FWHM) is less than 0.31 meV. These results indicate that the CdTe crystals are of extremely high-purity and quality

  2. Spatially Resolved Cathodoluminescence of CdTe Thin Films and Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Romero, M. J.; Metzger, W.; Gessert, T. A.; Albin, D. S.; Al-Jassim, M. M.

    2003-05-01

    We have investigated the spatial distribution of different transitions identified in the emission spectra of CdTe thin films and solar cells by cathodoluminescence spectroscopic imaging (CLSI). Prior to back-contact deposition, the spectra are dominated by excitons (X) and donor-to-acceptor (DAP) transitions. After contacting, Cu acceptor states are found in addition to the X and DAP recombination processes. A very systematic behavior found in CdTe is that DAP transitions occur preferentially at grain boundaries (GBs). The distribution of these states responsible for the passivation of GBs is not affected by further processing, although additional levels participate in the recombination process. We believe that this stability is one of the reasons for the success of thin-film CdTe solar cells. Estimates of the densities of different donors and acceptors participating in the recombination process are possible from the analysis of the evolution of the emission spectra with the excitation level. It is found that the back contact suppresses some intrinsic acceptors (associated with the A center) near the back-contact interface and, therefore, Cu acceptor states should be responsible for the p-typeness of the back surface more than a reduction of compensation. CLSI measurements are shown to be helpful in understanding the physics of back-contact formation.

  3. Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films

    Science.gov (United States)

    Punitha, K.; Sivakumar, R.; Sanjeeviraja, C.; Sathe, Vasant; Ganesan, V.

    2014-12-01

    In this paper, we report on physical properties of pure and Cu doped cadmium telluride (CdTe) films deposited onto corning 7059 microscopic glass substrates by electron beam evaporation technique. X-ray diffraction study showed that all the deposited films belong to amorphous nature. The average transmittance of the films is varied between 77% and 90%. The optical energy band gap of pure CdTe film is 1.57 eV and it decreased to 1.47 eV upon 4 wt. % of Cu addition, which may be due to the extension of localized states in the band structure. The refractive index of the films was calculated using Swanepoel method. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (Ed) parameters, dielectric constants, plasma frequency, and oscillator energy (Eo) of CdTe and CdTe:Cu films were calculated and discussed in detail with the light of possible mechanisms underlying the phenomena. The variation in intensity of photoluminescence band edge emission peak observed at 820 nm with Cu dopant is due to the change in surface state density. The observed trigonal lattice of Te peaks in the micro-Raman spectra confirms the p-type conductive nature of films, which was further corroborated by the Hall effect measurement. The lowest resistivity of 6.61 × 104 Ω cm was obtained for the CdTe:Cu (3 wt. %) film.

  4. Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Simonds, Brian J. [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Kheraj, Vipul [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Department of Applied Physics, S. V. National Institute of Technology, Surat 395 007 (India); Palekis, Vasilios; Ferekides, Christos [Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States); Scarpulla, Michael A., E-mail: scarpulla@eng.utah.edu [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)

    2015-06-14

    Laser processing of polycrystalline CdTe is a promising approach that could potentially increase module manufacturing throughput while reducing capital expenditure costs. For these benefits to be realized, the basic effects of laser irradiation on CdTe must be ascertained. In this study, we utilize surface photovoltage spectroscopy (SPS) to investigate the changes to the electronic properties of the surface of polycrystalline CdTe solar cell stacks induced by continuous-wave laser annealing. The experimental data explained within a model consisting of two space charge regions, one at the CdTe/air interface and one at the CdTe/CdS junction, are used to interpret our SPS results. The frequency dependence and phase spectra of the SPS signal are also discussed. To support the SPS findings, low-temperature spectrally-resolved photoluminescence and time-resolved photoluminescence were also measured. The data show that a modest laser treatment of 250 W/cm{sup 2} with a dwell time of 20 s is sufficient to reduce the effects of Fermi level pinning at the surface due to surface defects.

  5. Structural and luminescent properties of Fe3+ doped PVA capped CdTe nanoparticles

    Directory of Open Access Journals (Sweden)

    Ravindranadh K.

    2017-07-01

    Full Text Available During recent decades, magnetic and semiconductor nanoparticles have attracted significant attention of scientists in various fields of engineering, physics, chemistry, biology and medicine. Fe3+ doped PVA capped CdTe nanoparticles were prepared by co-precipitation method and characterized by powder X-ray diffraction, SEM, TEM, FT-IR, optical, EPR and PL techniques to collect the information about the crystal structure, coordination/local site symmetry of doped Fe3+ ions in the host lattice and the luminescent properties of prepared sample. Powder XRD data revealed that the crystal structure belongs to a cubic system and its lattice cell parameters were evaluated. The average crystallite size was estimated to be 8 nm. The morphology of prepared samples was analyzed by using SEM and TEM investigations. Functional groups of the prepared sample were observed in FT-IR spectra. Optical absorption and EPR studies have shown that on doping, Fe3+ ions enter the host lattice in octahedral site symmetry. PL studies of Fe3+ doped PVA capped CdTe nanoparticles revealed UV and blue emission bands. CIE chromaticity coordinates were also calculated from the emission spectrum of Fe3+ doped PVA capped CdTe nanoparticles.

  6. Signal-on electrochemiluminescence of biofunctional CdTe quantum dots for biosensing of organophosphate pesticides.

    Science.gov (United States)

    Liang, Han; Song, Dandan; Gong, Jingming

    2014-03-15

    A new, highly sensitive and selective ECL assay biosensor based on target induced signal on has been developed for the detection of organophosphate pesticides (OPs), whereby the smart integration of graphene nanosheets (GNs), CdTe quantum dots (CdTe QDs), and acetylcholinesterase (AChE) enzymatic reaction yields a biofunctional AChE-GNs-QDs hybrid as cathodic ECL emitters for OPs sensing. The electrochemically synthesized GNs were selected as a supporting material to anchor CdTe QDs, exhibiting a significantly amplified ECL signal of QDs. On the basis of the effect of OPs on the ECL signal of AChE-QDs-GNs modified glassy carbon electrode (GCE), a highly sensitive GNs-anchored-QDs-based signal-on ECL biosensor was developed for sensing OPs, combined with the enzymatic reactions and the dissolved oxygen as coreactant. The conditions for OPs detection were optimized by using methyl parathion (MP) as a model OP compound. Under the optimized experimental conditions, such a newly designed system shows remarkably improved sensitivity and selectivity for the sensing of OPs. The detection limit was found to be as low as about 0.06 ng mL(-1) (S/N=3). Toward the goal for practical applications, the resulting sensor was further evaluated by monitoring MP in spiked vegetable samples, showing fine applicability for the detection of MP in real samples. © 2013 Elsevier B.V. All rights reserved.

  7. Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, T. A.; Dhere, R. G.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Bergeson, J. D.

    2011-07-01

    We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t1) have provided insightful correlation with broad device functionality. However, we have more recently found that t1 does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t1 and the slower TRPL decay (t2) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t2. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t2. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t2, and therefore t2 data may demonstrate significant scatter when correlated with performance parameters.

  8. An optimized multilayer structure of CdS layer for CdTe solar cells application

    International Nuclear Information System (INIS)

    Han Junfeng; Liao Cheng; Jiang Tao; Spanheimer, C.; Haindl, G.; Fu, Ganhua; Krishnakumar, V.; Zhao Kui; Klein, A.; Jaegermann, W.

    2011-01-01

    Research highlights: → Two different methods to prepare CdS films for CdTe solar cells. → A new multilayer structure of window layer for the CdTe solar cell. → Thinner CdS window layer for the solar cell than the standard CdS layer. → Higher performance of solar cells based on the new multilayer structure. - Abstract: CdS layers grown by 'dry' (close space sublimation) and 'wet' (chemical bath deposition) methods are deposited and analyzed. CdS prepared with close space sublimation (CSS) has better crystal quality, electrical and optical properties than that prepared with chemical bath deposition (CBD). The performance of CdTe solar cell based on the CSS CdS layer has higher efficiency than that based on CBD CdS layer. However, the CSS CdS suffers from the pinholes. And consequently it is necessary to prepare a 150 nm thin film for CdTe/CdS solar cell. To improve the performance of CdS/CdTe solar cells, a thin multilayer structure of CdS layer (∼80 nm) is applied, which is composed of a bottom layer (CSS CdS) and a top layer (CBD CdS). That bi-layer film can allow more photons to pass through it and significantly improve the short circuit current of the CdS/CdTe solar cells.

  9. Preparation of High Purity CdTe for Nuclear Detector: Electrical and Nuclear Characterization

    Science.gov (United States)

    Zaiour, A.; Ayoub, M.; Hamié, A.; Fawaz, A.; Hage-ali, M.

    High purity crystal with controllable electrical properties, however, control of the electrical properties of CdTe has not yet been fully achieved. Using the refined Cd and Te as starting materials, extremely high-purity CdTe single crystals were prepared by the traditional vertical THM. The nature of the defects involved in the transitions was studied by analyzing the position of the energy levels by TSC method. The resolution of 4.2 keV (FWHM) confirms the high quality and stability of the detectors: TSC spectrum was in coherence with detectors spectrum with a horizontal plate between 0.2 and 0.6 eV. The enhancement in resolution of detectors with a full width at half- maximum (less than 0.31 meV), lead to confirm that the combination of vacuum distillation and zone refining was very effective to obtain more purified CdTe single crystals for photovoltaic or nuclear detectors with better physical properties.

  10. Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Marwoto, Putut; Made, D. P. Ngurah; Sugianto [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Othaman, Zulkafli [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)

    2013-09-03

    Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

  11. Ecotoxicity of CdTe quantum dots to freshwater mussels: Impacts on immune system, oxidative stress and genotoxicity

    International Nuclear Information System (INIS)

    Gagne, F.; Auclair, J.; Turcotte, P.; Fournier, M.; Gagnon, C.; Sauve, S.; Blaise, C.

    2008-01-01

    The purpose of this study was to examine the toxic effects of cadmium-telluride (CdTe) quantum dots on freshwater mussels. Elliption complanata mussels were exposed to increasing concentrations of CdTe (0, 1.6, 4 and 8 mg/L) and cadmium sulfate (CdSO 4 , 0.5 mg/L) for 24 h at 15 o C. After the exposure period, they were removed for assessments of immunocompetence, oxidative stress (lipid peroxidation) and genotoxicity (DNA strand breaks). Preliminary experiments revealed that CdTe dissolved in aquarium water tended to aggregate in the particulate phase (85%) while 15% of CdTe was found in the dissolved phase. Immunotoxicity was characterized by a significant decrease in the number of hemocytes capable of ingesting fluorescent beads, and hemocyte viability. The cytotoxic capacity of hemocytes to lyse mammalian K-562 cells was significantly increased, but the number of circulating hemocytes remained unchanged. Lipid peroxidation was significantly increased at a threshold concentration of 5.6 mg/L in gills and significantly reduced in digestive glands at a threshold concentration <1.6 mg/L CdTe. The levels of DNA strand breaks were significantly reduced in gills at <1.6 mg/L CdTe. In digestive glands, a transient but marginal increase in DNA strand breaks occurred at the lowest concentration and dropped significantly at the higher concentrations. A multivariate analysis revealed that the various response patterns differed based on the concentration of CdTe, thus permitting the identification of biomarkers associated with the form (colloidal vs. molecular) of cadmium

  12. Ecotoxicity of CdTe quantum dots to freshwater mussels: Impacts on immune system, oxidative stress and genotoxicity

    Energy Technology Data Exchange (ETDEWEB)

    Gagne, F. [Fluvial Ecosystem Research, Environment Canada, 105 McGill Street, Montreal, Quebec, H2Y 2E7 (Canada)], E-mail: francois.gagne@ec.gc.ca; Auclair, J.; Turcotte, P. [Fluvial Ecosystem Research, Environment Canada, 105 McGill Street, Montreal, Quebec, H2Y 2E7 (Canada); Fournier, M. [INRS-Institut Armand-Frappier, 245 Hymus, Pointe-Claire, Quebec, H9R 3G6 (Canada); Gagnon, C. [Fluvial Ecosystem Research, Environment Canada, 105 McGill Street, Montreal, Quebec, H2Y 2E7 (Canada); Sauve, S. [Departement de Chimie, Universite de Montreal, C.P. 6128, Succursale Centre-ville, Montreal, Quebec, H3C 3J7 (Canada); Blaise, C. [Fluvial Ecosystem Research, Environment Canada, 105 McGill Street, Montreal, Quebec, H2Y 2E7 (Canada)

    2008-02-18

    The purpose of this study was to examine the toxic effects of cadmium-telluride (CdTe) quantum dots on freshwater mussels. Elliption complanata mussels were exposed to increasing concentrations of CdTe (0, 1.6, 4 and 8 mg/L) and cadmium sulfate (CdSO{sub 4}, 0.5 mg/L) for 24 h at 15 {sup o}C. After the exposure period, they were removed for assessments of immunocompetence, oxidative stress (lipid peroxidation) and genotoxicity (DNA strand breaks). Preliminary experiments revealed that CdTe dissolved in aquarium water tended to aggregate in the particulate phase (85%) while 15% of CdTe was found in the dissolved phase. Immunotoxicity was characterized by a significant decrease in the number of hemocytes capable of ingesting fluorescent beads, and hemocyte viability. The cytotoxic capacity of hemocytes to lyse mammalian K-562 cells was significantly increased, but the number of circulating hemocytes remained unchanged. Lipid peroxidation was significantly increased at a threshold concentration of 5.6 mg/L in gills and significantly reduced in digestive glands at a threshold concentration <1.6 mg/L CdTe. The levels of DNA strand breaks were significantly reduced in gills at <1.6 mg/L CdTe. In digestive glands, a transient but marginal increase in DNA strand breaks occurred at the lowest concentration and dropped significantly at the higher concentrations. A multivariate analysis revealed that the various response patterns differed based on the concentration of CdTe, thus permitting the identification of biomarkers associated with the form (colloidal vs. molecular) of cadmium.

  13. Characteristic evaluation of a novel CdTe photon counting detector for X-ray imaging

    Science.gov (United States)

    Cho, Hyo-Min; Kim, Hee-Joung; Ryu, Hyun-Ju; Choi, Yu-Na

    2013-07-01

    The purpose of this paper is to investigate the characteristics of a novel cadmium-telluride (CdTe) photon counting detector optimized for X-ray imaging applications. CdTe was studied as a potential detector material for hard X-ray and gamma-ray detection. In this study, we used a CdTe photon counting detector manufactured by AJAT Ltd. (PID 350, Finland) for the purposes of both X-ray and gamma-ray detection. However, it is noted that X-ray detection can be limited by the characteristics of gamma-ray detectors. For the investigation of the characteristics of a detector for X-ray imaging, the detector has been studied in terms of detector calibration, count rate, and pixel sensitivity variation by using a poly-energetic X-ray. The detector calibration was evaluated to determine the effects of offset, gain, and energy. An optimal calibration increases the accuracy of the output energy spectrum. The pixel sensitivity variation was evaluated using profiles of various rows and columns from white (with X-ray) and dark (without X-ray) images. The specific trend of each image was observed around the edges of the hybrids. These pixel variations of the CdTe sensor were corrected. The image quality was improved by using the optimal correction method based on an understanding of the pixel sensitivity variation. The maximum recorded count rate of the detector was measured in all pixels. The count rate was measured by setting the energy windows from just above the noise level to the maximum energy. The average count rate was fairly linear up to 1.6 × 106 cps/8 modules and saturated at about 2.2 × 106 cps/8 modules. In this paper, we present several characteristics of the detector and demonstrate the improved spectrum and image obtained after calibration and correction. These results show that the novel CdTe photon counting detector can be used in conventional X-ray imaging, but exhibits limitations when applied to spectral X-ray imaging.

  14. Investigation of Processing, Microstructures and Efficiencies of Polycrystalline CdTe Photovoltaic Films and Devices

    Science.gov (United States)

    Munshi, Amit Harenkumar

    CdTe based photovoltaics have been commercialized at multiple GWs/year level. The performance of CdTe thin film photovoltaic devices is sensitive to process conditions. Variations in deposition temperatures as well as other treatment parameters have a significant impact on film microstructure and device performance. In this work, extensive investigations are carried out using advanced microstructural characterization techniques in an attempt to relate microstructural changes due to varying deposition parameters and their effects on device performance for cadmium telluride based photovoltaic cells deposited using close space sublimation (CSS). The goal of this investigation is to apply advanced material characterization techniques to aid process development for higher efficiency CdTe based photovoltaic devices. Several techniques have been used to observe the morphological changes to the microstructure along with materials and crystallographic changes as a function of deposition temperature and treatment times. Traditional device structures as well as advanced structures with electron reflector and films deposited on Mg1-xZnxO instead of conventional CdS window layer are investigated. These techniques include Scanning Electron Microscopy (SEM) with Electron Back Scattered Diffraction (EBSD) and Energy dispersive X-ray spectroscopy (EDS) to study grain structure and High Resolution Transmission Electron Microscopy (TEM) with electron diffraction and EDS. These investigations have provided insights into the mechanisms that lead to change in film structure and device performance with change in deposition conditions. Energy dispersive X-ray spectroscopy (EDS) is used for chemical mapping of the films as well as to understand interlayer material diffusion between subsequent layers. Electrical performance of these devices has been studied using current density vs voltage plots. Devices with efficiency over 18% have been fabricated on low cost commercial glass substrates

  15. Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe

    Science.gov (United States)

    Colegrove, E.; Yang, J.-H.; Harvey, S. P.; Young, M. R.; Burst, J. M.; Duenow, J. N.; Albin, D. S.; Wei, S.-H.; Metzger, W. K.

    2018-02-01

    Fundamental material doping challenges have limited CdTe electro-optical applications. In this work, the As atomistic diffusion mechanisms in CdTe are examined by spatially resolving dopant incorporation in both single-crystalline and polycrystalline CdTe over a range of experimental conditions. Density-functional theory calculations predict experimental activation energies and indicate that As diffuses slowly through the Te sublattice and quickly along GBs similar to Sb. Because of its atomic size and associated defect chemistry, As does not have a fast interstitial diffusion component similar to P. Experiments to incorporate and activate P, As, and Sb in polycrystalline CdTe are conducted to examine if ex situ Group V doping can overcome historic polycrystalline doping limits. The distinct P, As, and Sb diffusion characteristics create different strategies for increasing hole density. Because fast interstitial diffusion is prominent for P, less aggressive diffusion conditions followed by Cd overpressure to relocate the Group V element to the Te lattice site is effective. For larger atoms, slower diffusion through the Te sublattice requires more aggressive diffusion, however further activation is not always necessary. Based on the new physical understanding, we have obtained greater than 1016 cm‑3 hole density in polycrystalline CdTe films by As and P diffusion.

  16. Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Colegrove, Eric; Yang, Ji-Hui; Harvey, Steven P.; Young, Matthew; Burst, James M.; Duenow, Joel N.; Albin, David S.; Wei, Su-Huai; Metzger, Wyatt

    2018-01-10

    Fundamental material doping challenges have limited CdTe electro-optical applications. In this work, the As atomistic diffusion mechanisms in CdTe are examined by spatially resolving dopant incorporation in both single-crystalline and polycrystalline CdTe over a range of experimental conditions. Density-functional theory calculations predict experimental activation energies and indicate As diffuses slowly through the Te sublattice and quickly along GBs similar to Sb. Because of its atomic size and associated defect chemistry, As does not have a fast interstitial diffusion component similar to P. Experiments to incorporate and activate P, As, and Sb in polycrystalline CdTe are conducted to examine if ex-situ Group V doping can overcome historic polycrystalline doping limits. The distinct P, As, and Sb diffusion characteristics create different strategies for increasing hole density. Because fast interstitial diffusion is prominent for P, less aggressive diffusion conditions followed by Cd overpressure to relocate the Group V element to the Te lattice site is effective. For larger atoms, slower diffusion through the Te sublattice requires more aggressive diffusion, however further activation is not always necessary. Based on the new physical understanding, we have obtained greater than 10^16 cm^-3 hole density in polycrystalline CdTe films by As and P diffusion.

  17. 13.9%-efficient CdTe polycrystalline thin-film solar cells with an infrared transmission of {approx} 50%

    Energy Technology Data Exchange (ETDEWEB)

    Wu, X.; Zhou, J.; Duda, A.; Keane, J.C.; Gessert, T.A.; Yan, Y.; Noufi, R. [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2005-07-01

    To fabricate a high-efficiency polycrystalline thin-film tandem cell, the most critical work is to make a high-efficiency top cell ( > 15%) with high bandgap (E{sub g} = 1.5-1.8 eV) and high transmission (T > 70%) in the near-infrared (NIR) wavelength region. The CdTe cell is one of the candidates for the top cell, because CdTe state-of-the-art single-junction devices with efficiencies of more than 16% are available, although its bandgap (1.48 eV) is slightly lower for a top cell in a current-matched dual-junction device. In this paper, we focus on the development of a: (1) thin, low-bandgap Cu{sub x}Te transparent back-contact; and (2) modified CdTe device structure, including three novel materials: cadmium stannate transparent conducting oxide (TCO), ZnSnO{sub x} buffer layer, and nanocrystalline CdS:O window layer developed at NREL, as well as the high-quality CdTe film, to improve transmission in the NIR region while maintaining high device efficiency. We have achieved an NREL-confirmed 13.9%-efficient CdTe transparent solar cell with an infrared transmission of {approx}50% and a CdTe/CIS polycrystalline mechanically stacked thin-film tandem cell with an NREL-confirmed efficiency of 15.3%. (Author)

  18. The effects of anode material type on the optoelectronic properties of electroplated CdTe thin films and the implications for photovoltaic application

    Science.gov (United States)

    Echendu, O. K.; Dejene, B. F.; Dharmadasa, I. M.

    2018-03-01

    The effects of the type of anode material on the properties of electrodeposited CdTe thin films for photovoltaic application have been studied. Cathodic electrodeposition of two sets of CdTe thin films on glass/fluorine-doped tin oxide (FTO) was carried out in two-electrode configuration using graphite and platinum anodes. Optical absorption spectra of films grown with graphite anode displayed significant spread across the deposition potentials compared to those grown with platinum anode. Photoelectrochemical cell result shows that the CdTe grown with graphite anode became p-type after post-deposition annealing with prior CdCl2 treatment, as a result of carbon incorporation into the films, while those grown with platinum anode remained n-type after annealing. A review of recent photoluminescence characterization of some of these CdTe films reveals the persistence of a defect level at (0.97-0.99) eV below the conduction band in the bandgap of CdTe grown with graphite anode after annealing while films grown with platinum anode showed the absence of this defect level. This confirms the impact of carbon incorporation into CdTe. Solar cell made with CdTe grown with platinum anode produced better conversion efficiency compared to that made with CdTe grown using graphite anode, underlining the impact of anode type in electrodeposition.

  19. Multilayer solar cells based on CdTe grown from nitrate precursor

    Science.gov (United States)

    Salim, Hussein I.

    This thesis presents the research and development of low-cost multilayer graded-bandgap solar cells based on electrodeposited CdTe. The electronic quality layers used in this research are electrodeposited CdS and CdTe and chemical bath deposited (CBD) CdS. In the literature, the electrodeposition of CdS layers has been mainly reported using sodium thiosulphate (Na2S2O3), ammonium thiosulphate (NH4)2S2O3 and thioacetamide (C2H5NS) as the precursor for sulphur ions. The major disadvantages of these precursors are the precipitation of elemental S and CdS particles in the solution during growth which can affect the quality of the deposited thin films. Electrodeposition of the CdS from acidic and aqueous solutions using thiourea (SC(NH2)2) precursor has been able to overcome this disadvantage. No visible precipitations of elemental S or CdS particles were observed in the deposition electrolyte showing a stable bath during the growth.Also, in the literature, the CdTe thin films have been mainly electrodeposited using CdSO4 as the precursor for Cd ions whereas in this thesis the electrodeposition of the CdTe thin films were carried out comprehensively using cadmium nitrate Cd(NO3)2 as the precursor for Cd ions. Reports are scarce on the electrodeposition of CdS and CdTe thin films history using thiourea and nitrate precursors. Using these precursors, the CdS and CdTe have been successfully electrodeposited from aqueous solution on glass/fluorine-doped tin oxide (FTO) substrates, using simplified two-electrode system instead of the conventional three-electrode system. Also, the CBD-CdS thin films have been successfully grown from aqueous solution on glass/FTO substrates.The electrodeposited and chemical bath deposited materials were characterised for their structural, compositional, morphological, optical, electrical and defect properties using X-ray diffraction (XRD), Raman spectroscopy, energy dispersive X-ray diffraction (EDX), scanning electron microscopy (SEM), atomic

  20. Atmospheric Pressure Chemical Vapor Deposition of CdTe for High-Efficiency Thin-Film PV Devices; Annual Report, 26 January 1998-25 January 1999

    Energy Technology Data Exchange (ETDEWEB)

    Meyers, P. V. [ITN Energy Systems, Wheat Ridge, Colorado (US); Kee, R.; Wolden, C.; Raja, L.; Kaydanov, V.; Ohno, T.; Collins, R.; Aire, M.; Kestner, J. [Colorado School of Mines, Golden, Colorado (US); Fahrenbruch, A. [ALF, Inc., Stanford, California (US)

    1999-09-30

    ITN's 3-year project, titled ''Atmospheric Pressure Chemical Vapor Deposition (APCVD) of CdTe for High-Efficiency Thin-Film Photovoltaic (PV) Devices,'' has the overall objectives of improving thin-film CdTe PV manufacturing technology and increasing CdTe PV device power conversion efficiency. CdTe deposition by APCVD employs the same reaction chemistry as has been used to deposit 16%-efficient CdTe PV films, i.e., close-spaced sublimation, but employs forced convection rather than diffusion as a mechanism of mass transport. Tasks of the APCVD program center on demonstrating APCVD of CdTe films, discovering fundamental mass-transport parameters, applying established engineering principles to the deposition of CdTe films, and verifying reactor design principles that could be used to design high-throughput, high-yield manufacturing equipment. Additional tasks relate to improved device measurement and characterization procedures that can lead to a more fundamental understanding of CdTe PV device operation, and ultimately, to higher device conversion efficiency and greater stability. Specifically, under the APCVD program, device analysis goes beyond conventional one-dimensional device characterization and analysis toward two-dimension measurements and modeling. Accomplishments of the first year of the APCVD subcontract include: selection of the Stagnant Flow Reactor design concept for the APCVD reactor, development of a detailed reactor design, performance of detailed numerical calculations simulating reactor performance, fabrication and installation of an APCVD reactor, performance of dry runs to verify reactor performance, performance of one-dimensional modeling of CdTe PV device performance, and development of a detailed plan for quantification of grain-boundary effects in polycrystalline CdTe devices.

  1. Correction of diagnostic x-ray spectra measured with CdTe and CdZnTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, M. [Osaka Univ., Suita (Japan). Medical School; Kanamori, H.; Toragaito, T.; Taniguchi, A.

    1996-07-01

    We modified the formula of stripping procedure presented by E. Di. Castor et al. We added the Compton scattering and separated K{sub {alpha}} radiation of Cd and Te (23 and 27keV, respectively). Using the new stripping procedure diagnostic x-ray spectra (object 4mm-Al) of tube voltage 50kV to 100kV for CdTe and CdZnTe detectors are corrected with comparison of those spectra for the Ge detector. The corrected spectra for CdTe and CdZnTe detectors coincide with those for Ge detector at lower tube voltage than 70kV. But the corrected spectra at higher tube voltage than 70kV do not coincide with those for Ge detector. The reason is incomplete correction for full energy peak efficiencies of real CdTe and CdZnTe detectors. (J.P.N.)

  2. Characterization of Cu-doped CdTe thin films prepared by closed space sublimation (css) techniques

    International Nuclear Information System (INIS)

    Abbas, N.; Shah, N.; Ali, A.; Maqsood, A.

    2005-01-01

    Cadmium telluride (CdTe) thin films of different thickness are deposited on the microscopic slides of water-white glass substrates using the close spaced sublimation (CSS) method. The films are doped with Cu by immersion in Cu (NO/sub 3/)2-H/sub 2/O solution for different times and the effect of immersion time and subsequent heating in vacuum on the electrical, structural and optical properties are presented. The XRD and SEM results show that appropriate Cu doping would be favorable to the growth of CdTe crystallite. The Hall Effect measurements indicate that the conductivity of the films could be improved by Cu doping. (author)

  3. Direct Analysis of JV-Curves Applied to an Outdoor-Degrading CdTe Module (Presentation)

    Energy Technology Data Exchange (ETDEWEB)

    Jordan, D; Kurtz, S.; Ulbrich, C.; Gerber, A.; Rau, U.

    2014-03-01

    We present the application of a phenomenological four parameter equation to fit and analyze regularly measured current density-voltage JV curves of a CdTe module during 2.5 years of outdoor operation. The parameters are physically meaningful, i.e. the short circuit current density Jsc, open circuit voltage Voc and differential resistances Rsc, and Roc. For the chosen module, the fill factor FF degradation overweighs the degradation of Jsc and Voc. Interestingly, with outdoor exposure, not only the conductance at short circuit, Gsc, increases but also the Gsc(Jsc)-dependence. This is well explained with an increase in voltage dependent charge carrier collection in CdTe.

  4. First results of a highly granulated 3D CdTe detector module for PET

    Science.gov (United States)

    Chmeissani, Mokhtar; Kolstein, Machiel; Macias-Montero, José Gabriel; Puigdengoles, Carles; García, Jorge; Prats, Xavier; Martínez, Ricardo

    2018-01-01

    We present the performance of a highly granulated 3D detector module for PET, consisting of a stack of pixelated CdTe detectors. Each detector module has 2 cm  ×  2 cm  ×  2 cm of CdTe material, subdivided into 4000 voxels, where each voxel has size 1 mm  ×  1 mm  ×  2 mm and is connected to its own read-out electronics via a BiSn solder ball. Each read-out channel consists of a preamp, a discriminator, a shaper, a peak-and-hold circuit and a 10 bits SAR ADC. The preamp has variable gain where at the maximum gain the ADC resolution is equivalent to 0.7 keV. Each ASIC chip reads 100 CdTe pixel channels and has one TDC to measure the time stamp of the triggered events, with a time resolution of less than 1 ns. With the bias voltage set at  ‑250 V mm‑1 and for 17838 working channels out of a total of 20 000, we have obtained an average energy resolution of 2.2% FWHM for 511 keV photons. For 511 keV photons that have undergone Compton scattering, we measured an energy resolution of 3.2% FWHM. A timing resolution for PET coincidence events of 60 ns FWHM was found.

  5. Digital signal processing for CdTe detectors using VXIbus data collection systems

    Energy Technology Data Exchange (ETDEWEB)

    Fukuda, Daiji; Takahashi, Hiroyuki; Kurahashi, Tomohiko; Iguchi, Tetsuo; Nakazawa, Masaharu

    1996-07-01

    Recently fast signal digitizing technique has been developed, and signal waveforms with very short time periods can be obtained. In this paper, we analyzed each measured pulse which was digitized by an apparatus of this kind, and tried to improve an energy resolution of a CdTe semiconductor detector. The result of the energy resolution for {sup 137}Cs 662 keV photopeak was 13 keV. Also, we developed a fast data collection system based on VXIbus standard, and the counting rate on this system was obtained about 50 counts per second. (author)

  6. Evaluation of XRI-UNO CdTe detector for nuclear medical imaging

    International Nuclear Information System (INIS)

    Jambi, L.K.; Lees, J.E.; Bugby, S.L.; Alqahtani, M.S.; Tipper, S.; Perkins, A.C.

    2015-01-01

    Over the last two decades advances in semiconductor detector technology have reached the point where they are sufficiently sensitive to become an alternative to scintillators for high energy gamma ray detection for application in fields such as medical imaging. This paper assessed the Cadmium-Telluride (CdTe) XRI-UNO semiconductor detector produced by X-RAY Imatek for photon energies of interest in nuclear imaging. The XRI-UNO detector was found to have an intrinsic spatial resolution of <0.5mm and a high incident count rate capability up to at least 1680cps. The system spatial resolution, uniformity and sensitivity characteristics are also reported

  7. Thin-Film Solar Cells Based on the Polycrystalline Compound Semiconductors CIS and CdTe

    OpenAIRE

    Powalla, Michael; Bonnet, Dieter

    2007-01-01

    Thin-film photovoltaic modules based on Cu-In-Ga-Se-S (CIS) and CdTe are already being produced with high-quality and solar conversion efficiencies of around 10%, with values up to 14% expected in the near future. The integrated interconnection of single cells into large-area modules of 0.6×1.2m2 enables low-cost mass production, so that thin-film modules will soon be able to compete with conventional silicon-wafer-based modules...

  8. Thin-Film Solar Cells Based on the Polycrystalline Compound Semiconductors CIS and CdTe

    Directory of Open Access Journals (Sweden)

    Michael Powalla

    2007-01-01

    14% expected in the near future. The integrated interconnection of single cells into large-area modules of 0.6×1.2m2 enables low-cost mass production, so that thin-film modules will soon be able to compete with conventional silicon-wafer-based modules. This contribution provides an overview of the basic technologies for CdTe and CIS modules, the research and development (R&D issues, production technology and capacities, the module performance in long-term outdoor testing, and their use in installations.

  9. Dewetted growth and characterisation of high-resistivity CdTe

    Science.gov (United States)

    Fiederle, M.; Duffar, T.; Garandet, J. P.; Babentsov, V.; Fauler, A.; Benz, K. W.; Dusserre, P.; Corregidor, V.; Dieguez, E.; Delaye, P.; Roosen, G.; Chevrier, V.; Launay, J. C.

    2004-07-01

    Undoped and Ge-doped CdTe crystals have been grown using the dewetting phenomenon on the earth. A gap effected by the dewetting between the crystal and ampoule was created with a thickness up to 60 μm, but it was not stable for the complete growth process. The dewetting was stable for the first 25 mm of the growth, but than it got unstable. The main deteriorating factor was a change of a liquid-solid interface shape from the convex to concave. Structural, electrical, photoelectrical and optical characteristics of the studied samples showed better material quality in dewetted areas.

  10. Basic performance and stability of a CdTe solid-state detector panel.

    Science.gov (United States)

    Tsuchiya, Katsutoshi; Takahashi, Isao; Kawaguchi, Tsuneaki; Yokoi, Kazuma; Morimoto, Yuuichi; Ishitsu, Takafumi; Suzuki, Atsurou; Ueno, Yuuichirou; Kobashi, Keiji

    2010-05-01

    We have developed a prototype gamma camera system (R1-M) using a cadmium telluride (CdTe) detector panel and evaluated the basic performance and the spectral stability. The CdTe panel consists of 5-mm-thick crystals. The field of view is 134 x 268 mm comprising 18,432 pixels with a pixel pitch of 1.4 mm. Replaceable small CdTe modules are mounted on to the circuit board by dedicated zero insertion force connectors. To make the readout circuit compact, the matrix read out is processed by dedicated ASICs. The panel is equipped with a cold-air cooling system. The temperature and humidity in the panel were kept at 20 degrees C and below 70% relative humidity. CdTe polarization was suppressed by the bias refresh technique to stabilize the detector. We also produced three dedicated square pixel-matched collimators: LEGP (20 mm-thick), LEHR (27 mm-thick), and LEUHR (35 mm-thick). We evaluated their basic performance (energy resolution, system resolution, and sensitivity) and the spectral stability in terms of short-term (several hours of continuous acquisition) and long-term (infrequent measurements over more than a year) activity. The intrinsic energy resolution (FWHM) acquired with Tc-99m (140.5 keV) was 6.6%. The spatial resolutions (FWHM at a distance of 100 mm) with LEGP, LEHR, and LEUHR collimators were 5.7, 4.9, and 4.2 mm, and the sensitivities were 71, 39, and 23 cps/MBq, respectively. The energy peak position and the intrinsic energy resolution after several hours of operation were nearly the same as the values a few minutes after the system was powered on; the variation of the peak position was <0.2%, and that of the resolution was about 0.3%. Infrequent measurements conducted over a year showed that the variations of the energy peak position and the intrinsic energy resolution of the system were at a similar level to those described above. The basic performance of the CdTe-gamma camera system was evaluated, and its stability was verified. It was shown that the

  11. Study of CdTe surface by SIMS and RBS ellipsometry

    International Nuclear Information System (INIS)

    Stuck, R.; Hage-Ali, M.; Grob, A.; Siffert, P.

    1978-01-01

    For a better understanding of the mechanisms involved in the rectification of metal-cadmium telluride contacts, the surface of bromine-methanol etched CdTe crystals by means of ellipsometry, secondary ions mass spectroscopy (SIMS) and Rutherford backscattering of charged particles (RBS) has been investigated. The results show that these surfaces are contaminated with bromine and that a tellurium surface oxide layer grows, its thickness increasing with time. This surface layer composition has been analyzed at different steps of its evolution [fr

  12. Subcellular Localization of Thiol-Capped CdTe Quantum Dots in Living Cells

    Directory of Open Access Journals (Sweden)

    Chen Ji-Yao

    2009-01-01

    Full Text Available Abstract Internalization and dynamic subcellular distribution of thiol-capped CdTe quantum dots (QDs in living cells were studied by means of laser scanning confocal microscopy. These unfunctionalized QDs were well internalized into human hepatocellular carcinoma and rat basophilic leukemia cells in vitro. Co-localizations of QDs with lysosomes and Golgi complexes were observed, indicating that in addition to the well-known endosome-lysosome endocytosis pathway, the Golgi complex is also a main destination of the endocytosed QDs. The movement of the endocytosed QDs toward the Golgi complex in the perinuclear region of the cell was demonstrated.

  13. 3d-impurity levels in CdTe and ZnSe

    International Nuclear Information System (INIS)

    Tovstyuk, K.D.; Deybuk, V.G.; Melnichuk, S.V.; Tovstyuk, N.K.

    1985-01-01

    Energy level calculations of deep levels of 3d impurities (Cr, Mn, Fe, Co, Ni, Sc, Ti, V) in CdTe and ZnSe were made using the molecular cluster method and the MO LCAO method solving the secular equation. A 17-atom cluster consisting of a central atom and two coordination spheres were employed. The depth of the impurity levels in the energy gap increases with the atomic number of the impurity atom. Sc, Ti, and V impurities do not give impurity levels in the energy gap. The change in the lattice constant due to doping of AIIBVI crystals has been evaluated

  14. New Architecture towards Ultrathin CdTe Solar Cells for High Conversion Efficiency

    OpenAIRE

    Teyou Ngoupo, A.; Ouédraogo, S.; Zougmoré, F.; Ndjaka, J. M. B.

    2015-01-01

    Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-1D) is used to investigate the possibility of realizing ultrathin CdTe based solar cells with high and stable conversion efficiency. In the first step, we modified the conventional cell structure by substituting the CdS window layer with a CdS:O film having a wide band gap ranging from 2.42 to 3.17 eV. Thereafter, we simulated the quantum efficiency, as well as the parameters of J-V characteristics, and showed how the thickness of CdS:O l...

  15. SEM, EDS, PL and absorbance study of CdTe thin films grown by CSS method

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Torres, M.E.; Silva-Gonzalez, R.; Gracia-Jimenez, J.M. [Instituto de Fisica, BUAP, Apdo. Postal J-48, San Manuel, 72570 Puebla, Pue. (Mexico); Casarrubias-Segura, G. [CIE- UNAM, 62580 Temixco, Morelos (Mexico)

    2006-09-22

    Oxygen-doped CdTe films were grown on conducting glass substrates by the close spaced sublimation (CSS) method and characterized using SEM, EDS, photoluminescence (PL) and absorbance. A significant change in the polycrystalline morphology is observed when the oxygen proportion is increased in the deposition atmosphere. The EDS analysis showed that all samples are nonstoichiometric with excess Te. The PL spectra show emission bands associated with Te vacancies (V{sub Te}), whose intensities decrease as the oxygen proportion in the CSS chamber is increased. The oxygen impurities occupy Te vacancies and modify the surfaces states, improving the nonradiative process. (author)

  16. Deposition of CdTe films under microgravity: Foton M3 mission

    Energy Technology Data Exchange (ETDEWEB)

    Benz, K.W.; Croell, A. [Freiburger Materialforschungszentrum FMF, Albert-Ludwigs-Universitaet Freiburg (Germany); Zappettini, A.; Calestani, D. [CNR Parma, Instituto Materiali Speciali per Elettronica e Magnetismo IMEM, Fontani Parma (Italy); Dieguez, E. [Universidad Autonoma de Madrid (Spain). Departamento de Fisica de Materiales; Carotenuto, L.; Bassano, E. [Telespazio Napoli, Via Gianturco 31, 80146 Napoli (Italy); Fiederle, M.

    2009-10-15

    Experiments of deposition of CdTe films have been carried out under microgravity in the Russian Foton M3 mission. The influence of gravity has been studied with these experiments and compared to the results of simulations. The measured deposition rate could be confirmed by the theoretical results for lower temperatures. For higher temperatures the measured thickness of the deposited films was larger compared to the theoretical data. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Unified Numerical Solver for Device Metastabilities in CdTe Thin-Film PV

    Energy Technology Data Exchange (ETDEWEB)

    Vasileska, Dragica [Arizona State Univ., Tempe, AZ (United States)

    2017-08-17

    Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers de-vote significant empirical efforts to study these phenomena and to improve semiconduc-tor device stability. Still, understanding the underlying reasons of these instabilities re-mains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most com-monly alleged causes of metastability in CdTe device, such as “migration of Cu,” have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses sug-gesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe pro-vide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic de-fects; for example, changing the state of an impurity from an interstitial donor to a sub-stitutional acceptor often is accompanied by generation of a compensating intrinsic in-terstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the elec-trical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of

  18. Effect of electric field on spray deposited CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Vamsi Krishna, K.; Dutta, V.; Paulson, P.D

    2003-11-01

    CdTe thin films have been deposited using spray pyrolysis with and without electric field. The improvement in the film properties with the electric field is observed which is mainly due to the reduction of droplet size. The presence of CdTeO{sub 3} peaks in the X-ray diffraction pattern for films deposited without electric field at 350 deg. C is attributed to the slow dissociation of complexes containing Cd and Te ions on the substrate. The reduction in the droplet size under the influence of electric field and faster dissociation of droplets at high temperature leads to complete pyrolytic reaction for a nearly oxide free CdTe film formation. Energy dispersive X-ray analysis indicates stoichiometric Cd and Te atomic concentrations, with oxygen and chlorine impurities in varying amount for different substrate temperatures, with and without electric field. The presence of chlorine gives rise to an intense photoluminescence peak at 1.40 eV along with a weak peak at 0.84 eV. The intensities of both peaks diminish when the films are prepared with the electric field, due to reduction of chlorine concentration and morphological changes in the films.

  19. Polycrystalline CdTe thin film mini-modules monolithically integrated by fiber laser

    Energy Technology Data Exchange (ETDEWEB)

    Bosio, A., E-mail: alessio.bosio@unipr.it [Department of Physics and Earth Sciences, University of Parma, via G.P. Usberti 7/A, 43124 Parma (Italy); Sozzi, M. [Department of Information Engineering, University of Parma, via G.P. Usberti 181/A, 43124 Parma (Italy); Menossi, D. [Department of Physics and Earth Sciences, University of Parma, via G.P. Usberti 7/A, 43124 Parma (Italy); Selleri, S.; Cucinotta, A. [Department of Information Engineering, University of Parma, via G.P. Usberti 181/A, 43124 Parma (Italy); Romeo, N. [Department of Physics and Earth Sciences, University of Parma, via G.P. Usberti 7/A, 43124 Parma (Italy)

    2014-07-01

    The CdTe thin film technology for photovoltaics (PV) is attractive because of its potential low cost and good performance. In thin film technology the efficiency of large area cells can be maintained if small segments are interconnected in series to reduce the photocurrent and resistance losses. In respect to this, the scribing process is critical for the performance of the device. Today, fiber lasers represent the most advanced and cheap technology that can be used in PV industry to carry out the cuts, needed for the monolithic integration, at different deposition stages. We will present our results on the scribing of CdTe thin film solar cells by means of fiber lasers, with pulse duration of a few nanoseconds and solid state lasers in the picosecond regime. The quality of the scribing was evaluated by optical and scanning electron microscopy. Finally, mini-modules with a total area of 10 × 10 cm{sup 2} were fabricated, in which the cells were interconnected in series by means of a scribing system, equipped with a fiber laser with the same characteristics of the system mounted on production lines. The mini-modules were characterized by photovoltaic and electrical measurements. - Highlights: • Study of laser scribing of CdTe-based mini-modules • Comparison between different lasers working in nanosecond and picosecond regimes • The laser scribing process was transferred to industrial production.

  20. Overcoming degradation mechanisms in CdTe solar cells: First annual report, August 1998--August 1999

    Energy Technology Data Exchange (ETDEWEB)

    Cahen, D.; Gartsman, K.; Hodes, G.; Rotlevy, O.; Visoly-Fisher, I,; Dobson, K.

    2000-02-28

    The authors have studied the importance of chemical processes for the stability of CdTe solar cells, in particular, diffusion in the ohmic contact/absorber junction regions. Both whole cells and test systems containing only the ohmic contact and the absorber are used. They found several experimental methods to be useable tools to follow the effects of impurity diffusion on the CdTe grain boundaries, grain bulk, and surface. In addition, they have explored alternative contacting schemes. The first year of activities led to the following tentative conclusions: Grain boundaries in CdTe/CdS cells are NOT fully passivated and are expected to be electrically active; There appears to be fast ionic diffusion in the vicinity of the Cu/HgTe/graphite back-contact, possibly enhanced by grain boundary diffusion; The macroscopic response to stress is different for cells with identical back-contact, but from different manufacturers. Different factors and/or different reactions to identical factors are possibly at work here; and Ni-P appears to be a promising back-contact material.

  1. NUMERICAL SIMULATION AND OPTIMIZATION OF PERFORMANCES OF A SOLAR CELL BASED ON CdTe

    Directory of Open Access Journals (Sweden)

    A. M. Ferouani

    2015-07-01

    Full Text Available This article has as an aim the study and the simulation of the photovoltaic cells containing CdTe materials, contributing to the development of renewable energies, and able to feed from the houses, the shelters as well as photovoltaic stations… etc. CdTe is a semiconductor having a structure of bands with an indirect gap of a value of 1,5 eV at ambient temperature what means that photon wavelength of approximately 1200 nm will be able to generate an electron-hole pair. One speaks about photogeneration. We will lay the stress, initially, on the essential design features of a photovoltaic module (the open-circuit tension, the short-circuit current, the fill factor, and the output of the cell, our results was simulated with the SCAPS computer code in one dimension which uses electrical characteristics DC and AC of the thin layers heterojunctions. The results obtained after optimization are: VCO = 0.632V, Jsc = 39.1 mA/cm2, FF=82.98 % and the output energy of conversion is 18.26%.Optimization is made according to the temperature and the wavelength.

  2. Evaluation of Compton gamma camera prototype based on pixelated CdTe detectors.

    Science.gov (United States)

    Calderón, Y; Chmeissani, M; Kolstein, M; De Lorenzo, G

    2014-06-01

    A proposed Compton camera prototype based on pixelated CdTe is simulated and evaluated in order to establish its feasibility and expected performance in real laboratory tests. The system is based on module units containing a 2×4 array of square CdTe detectors of 10×10 mm 2 area and 2 mm thickness. The detectors are pixelated and stacked forming a 3D detector with voxel sizes of 2 × 1 × 2 mm 3 . The camera performance is simulated with Geant4-based Architecture for Medicine-Oriented Simulations(GAMOS) and the Origin Ensemble(OE) algorithm is used for the image reconstruction. The simulation shows that the camera can operate with up to 10 4 Bq source activities with equal efficiency and is completely saturated at 10 9 Bq. The efficiency of the system is evaluated using a simulated 18 F point source phantom in the center of the Field-of-View (FOV) achieving an intrinsic efficiency of 0.4 counts per second per kilobecquerel. The spatial resolution measured from the point spread function (PSF) shows a FWHM of 1.5 mm along the direction perpendicular to the scatterer, making it possible to distinguish two points at 3 mm separation with a peak-to-valley ratio of 8.

  3. Study of the effect of the stress on CdTe nuclear detectors

    International Nuclear Information System (INIS)

    Ayoub, M.; Radley, I.; Mullins, J. T.; Hage-Ali, M.

    2013-01-01

    CdTe detectors are commonly used for X and γ ray applications. The performance of these detectors is strongly affected by different types of mechanical stress; such as that caused by differential expansion between the semiconductor and its intimate metallic contacts and that caused by applied pressure during the bonding process. The aim of this work was to study the effects of stress on the performance of CdTe detectors. A difference in expansion coefficients induces transverse stress under the metallic contact, while contact pressure induces longitudinal stress. These stresses have been simulated by applying known static pressures. For the longitudinal case, the pressure was applied directly to the metallic contact; while in the transverse case, it was applied to the side. We have studied the effect of longitudinal and transverse stresses on the electrical characteristics including leakage current measurements and γ-ray detection performance. We have also investigated induced defects, their nature, activation energies, cross sections, and concentrations under the applied stress by using photo-induced current transient spectroscopy and thermoelectric effect spectroscopy techniques. The operational stress limit is also given

  4. A pixellated gamma-camera based on CdTe detectors clinical interests and performances

    CERN Document Server

    Chambron, J; Eclancher, B; Scheiber, C; Siffert, P; Hage-Ali, M; Regal, R; Kazandjian, A; Prat, V; Thomas, S; Warren, S; Matz, R; Jahnke, A; Karman, M; Pszota, A; Németh, L

    2000-01-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cmx15 cm detection matrix of 2304 CdTe detector elements, 2.83 mmx2.83 mmx2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the gamma-camera performances. But their use as gamma detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed ...

  5. Enhancement in microstructural and optoelectrical properties of thermally evaporated CdTe films for solar cells

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2018-03-01

    The optimization of microstructural and optoelectrical properties of a thin layer is an important step prior device fabrication process, so an enhancement in these properties of thermally evaporated CdTe thin films is reported in this communication. The films having thickness 450 nm and 850 nm were deposited on thoroughly cleaned glass and indium tin oxide (ITO) substrates followed by annealing at 450 °C in air atmosphere. These films were characterized for microstructural and optoelectrical properties employing X-ray diffraction, scanning electron microscopy coupled with energy-dispersive spectroscopy, UV-Vis spectrophotometer and source meter. The films found to be have zinc-blende cubic structure with preferred reflection (111) while the crystallographic parameters and direct energy band gap are strongly influenced by the film thickness. The surface morphology studies show that the films are uniform, smooth, homogeneous and nearly dense-packed as well as free from voids and pitfalls as where elemental analysis revealed the presence of Cd and Te element in the deposited films. The electrical analysis showed linear behavior of current with voltage while conductivity is decreased for higher thickness. The results show that the microstructural and optoelectrical properties of CdTe thin layer could be enhanced by varying thickness and films having higher thickness might be processed as promising absorber thin layer to the CdTe-based solar cells.

  6. Charge-carrier transport and recombination in heteroepitaxial CdTe

    International Nuclear Information System (INIS)

    Kuciauskas, Darius; Farrell, Stuart; Dippo, Pat; Moseley, John; Moutinho, Helio; Li, Jian V.; Allende Motz, A. M.; Kanevce, Ana; Zaunbrecher, Katherine; Gessert, Timothy A.; Levi, Dean H.; Metzger, Wyatt K.; Colegrove, Eric; Sivananthan, S.

    2014-01-01

    We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and nonlinear two-photon excitation, we assess surface, interface, and bulk recombination. Two-photon excitation with a focused laser beam enables characterization of recombination velocity at the buried epilayer/substrate interface, 17.5 μm from the sample surface. Measurements with a focused two-photon excitation beam also indicate a fast diffusion component, from which we estimate an electron mobility of 650 cm 2 (Vs) −1 and diffusion coefficient D of 17 cm 2  s −1 . We find limiting recombination at the epitaxial film surface (surface recombination velocity S surface  = (2.8 ± 0.3) × 10 5  cm s −1 ) and at the heteroepitaxial interface (interface recombination velocity S interface  = (4.8 ± 0.5) × 10 5  cm s −1 ). The results demonstrate that reducing surface and interface recombination velocity is critical for photovoltaic solar cells and electronic devices that employ epitaxial CdTe.

  7. Highly fluorescent CdTe quantum dots with reduced cytotoxicity-A Robust biomarker

    Directory of Open Access Journals (Sweden)

    Jandi Kim

    2015-03-01

    Full Text Available l-Cysteine (Cys capped CdTe quantum dots (CdTe@Cys QDs were successfully synthesized in an aqueous medium. The synthesized CdTe@Cys samples were analyzed using Fourier transform infrared (FT-IR spectroscopy, fluorescence (FL spectroscopy, transmission electron microscopy (TEM, confocal microscopy and subsequently subjected to the antibacterial test. Systematic investigations were carried out for the determination of optimal conditions namely the ratios of Cd:Te, CdTe:Cys, pH value and the chemical stability of CdTe@Cys. Moreover, the reactivation of FL intensity in the CdTe@Cys sample was done easily by the addendum of Cys. The introduction of additional cysteine to the CdTe@Cys QDs sample showed an enhancement in terms of the FL intensity and stability along with the reduced antibacterial activity. This was further confirmed through Thiazolyl blue tetrazolium bromide (MTT assays. Both the result of the bio-stability tests namely the antibacterial test and MTT assay displayed similarities between the externally added Cys and cytotoxicity of the bacteria and human HeLa cancer cell lines. Confocal microscopic images were captured for the CdTe@Cys conjugated Escherichia coli.

  8. Study of CdTe and HgCdTe thin films obtained by electrochemical methods

    International Nuclear Information System (INIS)

    Guillen, C.

    1990-01-01

    Cadmium telluride polycrystalline thin films were fabricated on SnO 2 -coated glass substrates by potentiostatic electrodeposition and characterized by X-ray diffraction, energy dispersive X-ray analyses (EDAX), optical and electrical measurements. The films dseposited at potentials more positive than -0.65 V vs.SCE were p-type but those deposited at more negative potentials were n-type. All CdTe thin films showed a band-gap energy about 1.45 eV and a large absorption coeffici-ent (a=10 5 cm -1 ) above de band edge. The addition of even small amounts of mercury to the CdTe produces higuer conductivity values and lower band-gap energies. We have prepared HgCdTe thin films where the band-gap energies ranged between 0.93 and 0.88 eV depending on the ratio of mercury to cadmium. Heat treatment at 300 0 C increases the crystalline diameter and alter the composition of the electrodeposited films, a decrease of the resistivity values was also observed. (Author)

  9. Green light-emitting CdTe nanocrystals: synthesis and optical characterizations

    Energy Technology Data Exchange (ETDEWEB)

    Algieri, Luciana; Rosato, Roberta; Mosca, Maria Elena; Protopapa, Maria Lucia; Scalone, Anna Grazia; Di Benedetto, Francesca; Bucci, Luigi; Tapfer, Leander [ENEA, Technical Unit for Materials Technologies, Brindisi Research Centre, Brindisi (Italy)

    2015-01-01

    In this work, we report on the synthesis of CdTe nanocrystals (NCs) by using of two different saturated long-chain capping ligands, oleic (OA) and myristic acids (MA), and investigate their influence on the nanocrystals optical properties. The main goal of our study is to identify the ligand that allows slowing down the growth rate of the NCs after nucleation, in order to obtain small enough nanocrystals emitting in the blue-green part of the optical spectrum. Our results show clearly that oleic acid allows a good control on the CdTe NCs growth, finally leading to a fine-tuning of the NCs size-dependent emission from the green to the yellow part of the spectrum. Instead, a faster reaction kinetics, which arises in a lower possibility to produce small NCs emitting in the green part of the spectrum, was noticed using myristic acid. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. p-type doping efficiency in CdTe: Influence of second phase formation

    Science.gov (United States)

    McCoy, Jedidiah J.; Swain, Santosh K.; Sieber, John R.; Diercks, David R.; Gorman, Brian P.; Lynn, Kelvin G.

    2018-04-01

    Cadmium telluride (CdTe) high purity, bulk, crystal ingots doped with phosphorus were grown by the vertical Bridgman melt growth technique to understand and improve dopant solubility and activation. Large net carrier densities have been reproducibly obtained from as-grown ingots, indicating successful incorporation of dopants into the lattice. However, net carrier density values are orders of magnitude lower than the solubility of P in CdTe as reported in literature, 1018/cm3 to 1019/cm3 [J. H. Greenberg, J. Cryst. Growth 161, 1-11 (1996) and R. B. Hall and H. H. Woodbury, J. Appl. Phys. 39(12), 5361-5365 (1968)], despite comparable starting charge dopant densities. Growth conditions, such as melt stoichiometry and post growth cooling, are shown to have significant impacts on dopant solubility. This study demonstrates that a significant portion of the dopant becomes incorporated into second phase defects as compounds of cadmium and phosphorous, such as cadmium phosphide, which inhibits dopant incorporation into the lattice and limits maximum attainable net carrier density in bulk crystals. Here, we present an extensive study on the characteristics of these second phase defects in relation to their composition and formation kinetics while providing a pathway to minimize their formation and enhance solubility.

  11. Interaction of different thiol-capped CdTe quantum dots with bovine serum albumin

    International Nuclear Information System (INIS)

    Wang Qisui; Zhang Xiaolei; Zhou Xiaolan; Fang Tingting; Liu Pengfei; Liu Peng; Min Xinmin; Li, Xi

    2012-01-01

    Due to their unique optical properties, quantum dots (QDs) are rapidly revolutionizing many areas of medicine and biology. Despite the remarkable speed of development of nanoscience, relatively little is known about the interaction of nanoscale objects with organism. In this work, interaction of CdTe QDs coated with mercaptopropanoic acid (MPA), L-cysteine (L-cys), and glutathione (GSH) with bovine serum albumin (BSA) was investigated. Fluorescence (FL), UV–vis absorption, and circular dichroism (CD) spectra methods were used. The Stern-Volmer quenching constant (K sv ) at different temperatures, corresponding thermodynamic parameters (ΔH, ΔG and ΔS), and information of the structural features of BSA were gained. We found that QDs can effectively quench the FL of BSA in a ligand-dependent manner, electrostatic interactions play a major role in the binding reaction, and the nature of quenching is static, resulting in forming QDs-BSA complexes. The CD spectra showed that the secondary and tertiary structure of BSA was changed. This study contributes to a better understanding of the ligand effects on QDs-proteins interactions, which is a critical issue for the applications in vivo. - Highlights: ► The interaction between three thiol-capped QDs and BSA by UV–vis, FL, and CD spectra. ► The bio-effect of CdTe QDs on BSA was a ligand-dependent manner. ► The thermodynamic parameters and the structural features of BSA were gained.

  12. A basic component for ISGRI, the CdTe gamma camera on board the INTEGRAL satellite

    International Nuclear Information System (INIS)

    Arques, M.; Baffert, N.; Lattard, D.

    1999-01-01

    A basic component, called Polycell, has been developed for the ISGRI (INTEGRAL Soft Gamma Ray Imager) CdTe camera on board the INTEGRAL (INTErnational Gamma-Ray Astrophysics Laboratory) satellite. Operating at room temperature, it covers the 20 keV--1 MeV energy range. It features a sub-ensemble of 16 CdTe detectors and their associated front end electronics. This electronics is based on 4-channel analog-digital ASICs. Their analog part features a low noise preamplifier, allowing a threshold below 20 keV and a pulse rise-time measurement which permits a charge loss correction. The digital part ensures the internal acquisition timing sequence as well as the dialogue with external electronics. Two versions of the ISGRI ASIC have been developed in a collaboration of two CEA microelectronics teams from CEA/DTA/LETI/DSYS and CEA/DSM/DAPNIA/SEI, respectively on a standard CMOS AMS process hardened against radiation by lay-out, and on a Silicon On Insulator process (DMILL MHS), the latter being latch-up free. This paper presents the ASIC and polycell architecture as well as experimental results obtained with polycells equipped with AMS ASICs

  13. Characterization of CdTe nuclear detectors for gamma radiation spectrometry

    International Nuclear Information System (INIS)

    Rebondy, Jacques.

    1977-01-01

    The crystallography of CdTe is presented. The characterization of CdTe crystals manufactured at LETI was studied using a spectrometry unit, and an experimental study of surface states and contacts was simultaneously undertaken. A manufacturing process was perfected for the detectors: hand polishing and deposit of a drop of conducting lac. Measurements mode on a great number of materials revealed the interest of chlore doping, the polarization phenomenon associated (the polarization is equivalent to a voltage drop and depends on temperature), the effect of surface states and contacts. It was shown that magnesium doping is a failure and the polarization time constant has a value of about 1 msec. An electron time-of-flight experiment was performed in order to measure the mobilities in the sample at normal temperature: the values obtained are: 70-90 cm 2 /v.sec for holes and 800-1000 cm 2 /v.sec for electrons. A trapping level was observed at 0.14eV in a Cl - doped sample; trapping parameters were estimated for a few samples [fr

  14. Characterization inconsistencies in CdTe and CZT gamma-ray detectors

    International Nuclear Information System (INIS)

    Lavietes, A.D.; McQuaid, J.H.

    1994-10-01

    In the past few years, significant developments in cadmium telluride (CdTe) and cadmium zinc telluride (CZT) semiconductor materials have taken place with respect to both quality and yield. Many of the more recent developments have occurred in the area of CZT crystal growth. This has resulted in an explosion of interest in the use of these materials in ambient temperature gamma-ray detectors. Most, if not all, of the manufacturers of CdTe and CZT have acquired government funding to continue research in development and applications, indicating the importance of these improvements in material quality. We have examined many detectors, along with the accompanying manufacturer's data, and it has become apparent that a clear standard does not exist by which each manufacturer characterizes the performance of their material. Result is a wide variety of performance claims that have no basis for comparison and normally cannot be readily reproduced. This paper first supports our observations and then proposes a standard that all manufacturers and users of these materials may use for characterization

  15. Effect of visible and UV irradiation on the aggregation stability of CdTe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Tsipotan, Aleksei S.; Gerasimova, Marina A.; Aleksandrovsky, Aleksandr S., E-mail: aleksandrovsky@kirensky.ru; Zharkov, Sergey M.; Slabko, Vitaliy V. [Siberian Federal University (Russian Federation)

    2016-11-15

    The possibility of controlling the aggregation stability of CdTe quantum dots (QDs) stabilized by thioglycolic acid (TGA) is important for implementation of quasi-resonant laser-induced self-assembly. This study examines the influence of irradiation by the UV as well as by the visible light on the photostimulated aggregation of QDs. Different photochemical mechanisms are identified, depending on whether light wavelength falls into an interband transition or the first exciton transition. Irradiation by visible light does not lead to changes in the absorption spectra but decreases luminescence intensity through the detachment of TGA and the formation of dangling bonds, leading to the creation of radiativeless relaxation centers. UV irradiation (in the 300–370 nm range), at an intensity of 0.4 W/cm{sup 2}, initially (during the first 75 min) leads to the degradation of the stabilizer and QDs’ surface. After 75 min of combined UV and visible light irradiation, a gradual increase in spontaneous aggregation takes place, testifying excessive decrease in stabilizing potential barrier height. Hence, the laser-induced self-assembly of CdTe QDs is recommended to be performed over a time period of between 80 and 100 min after the beginning of low-intensity UV irradiation under conditions equivalent to those applied in this study.

  16. Optical Absorption Enhancement in CdTe Thin Films by Microstructuration of the Silicon Substrate

    Directory of Open Access Journals (Sweden)

    Jesús Rangel-Cárdenas

    2017-06-01

    Full Text Available In this work, the reflectance, optical absorption, and band gap have been determined for CdTe thin films grown on planar and microstructured substrates. The treated surface was prepared by laser ablation of a silicon wafer, forming holes in a periodic arrangement. Thin films were grown by pulsed laser ablation on silicon samples kept at 200 °C inside a vacuum chamber. The presence of CdTe was verified with X-ray diffraction and Raman spectroscopy indicating a nanocrystalline zinc blended structure. The optical absorption of thin films was calculated by using the Fresnel laws and the experimental reflectance spectrum. Results show that reflectance of 245 nm films deposited on modified substrates is reduced by up to a factor of two than the obtained on unchanged silicon and the optical absorption is 16% higher at ~456 nm. Additionally, it was determined that the band gap energy for planar and microstructured films is about 1.44 eV for both cases.

  17. Investigation of MBE grown polycrystalline CdTe films on the Medipix readout chip

    Science.gov (United States)

    Schütt, S.; Vogt, A.; Frei, K.; Fischer, F.; Fiederle, M.

    2017-06-01

    Cadmium Telluride (CdTe) films are directly deposited on a CMOS (complementary metal-oxide-semiconductor) based readout chip as sensor layer for X-ray detection. This is performed by using a modified Molecular Beam Epitaxy (MBE) setup with a carbon collimator enabling growth rates up to 10 μm/h. To obtain a good contacting behaviour of the 25-50 μm thick CdTe films, Te and Sb2Te3 are additionally evaporated during the process. The investigation of polycrystalline sensor layers deposited at 400 °C with SEM (scanning electron microscopy) and XRD (X-ray diffraction) reveals a columnar growth of the individual grains oriented predominantly in (111). By PES (photoelectron spectroscopy) measurements the chemical composition of the different layers is identified in a depth profile and changes in work function along the contact structure are observed. Detector properties reveal a linear behaviour of the count rate with increasing radiation intensity as well as sensibility to holes and electrons. Spatial resolution measurements result in a resolution of 5 lp/mm, which is a mandatory requirement for medical applications.

  18. Studying nanotoxic effects of CdTe quantum dots in Trypanosoma cruzi

    Science.gov (United States)

    Stahl, C. V.; Almeida, D. B.; de Thomaz, A. A.; Fontes, A.; Menna-Barreto, R. F. S.; Santos-Mallet, J. R.; Cesar, C. L.; Gomes, S. A. O.; Feder, D.

    2010-02-01

    Many studies have been done in order to verify the possible nanotoxicity of quantum dots in some cellular types. Protozoan pathogens as Trypanosoma cruzi, etiologic agent of Chagas1 disease is transmitted to humans either by blood-sucking triatomine vectors, blood transfusion, organs transplantation or congenital transmission. The study of the life cycle, biochemical, genetics, morphology and others aspects of the T. cruzi is very important to better understand the interactions with its hosts and the disease evolution on humans. Quantum dot, nanocrystals, highly luminescent has been used as tool for experiments in in vitro and in vivo T. cruzi life cycle development in real time. We are now investigating the quantum dots toxicity on T. cruzi parasite cells using analytical methods. In vitro experiments were been done in order to test the interference of this nanoparticle on parasite development, morphology and viability (live-death). Ours previous results demonstrated that 72 hours after parasite incubation with 200 μM of CdTe altered the development of T. cruzi and induced cell death by necrosis in a rate of 34%. QDs labeling did not effect: (i) on parasite integrity, at least until 7 days; (ii) parasite cell dividing and (iii) parasite motility at a concentration of 2 μM CdTe. This fact confirms the low level of cytotoxicity of these QDs on this parasite cell. In summary our results is showing T. cruzi QDs labeling could be used for in vivo cellular studies in Chagas disease.

  19. Fabrication of stable large-area thin-film CdTe photovoltaic modules

    Science.gov (United States)

    Nolan, J. F.; Meyers, P. V.

    1993-08-01

    This report highlights the progress made by Solar Cells, Inc. (SCI), in its program to produce 60-cm x 120-cm solar modules based on CdTe films. During the past year, confirmed efficiency has increased to 10.4% (active area) on a 1 sq cm cell, 9.8% (aperture area) on a 64 sq cm 8-cell submodule, and 6.6% (total area) on a 7200 sq cm module. A module measured in-house had a power output of 53 W, for a total-area efficiency of 7.4%. Average efficiency of modules produced is steadily increasing and standard deviation is decreasing; in a limited run of 12 modules, results were 6.3% +/- 0.2%. Field testing has begun; a nominal 1-kW array of 24 modules was set up adjacent to SCI's facilities. Analysis indicates that present modules are limited in efficiency by shunt resistance and optical absorption losses in the glass superstrate. Loss analysis of present devices allows us to project a module efficiency of 11.8%. A third generation deposition method, atmospheric pressure elemental vapor deposition (APEVD), has been brought on-line and has produced good quality CdTe. In addition, SCI is expanding its pro-active safety, health, environmental, and disposal program dealing with issues surrounding cadmium.

  20. Growth and characterization of CdTe single crystals for radiation detectors

    CERN Document Server

    Funaki, M; Satoh, K; Ohno, R

    1999-01-01

    To improve the productivity of CdTe radiation detectors, the crystal growth by traveling heater method (THM) as well as the quality of the fabricated detectors were investigated. In the THM growth, optimization of the solvent volume was found to be essential because it affects the shape of the growth interface. The use of the slightly tilted seed from B was also effective to limit the generation of twins having different directions. Single-crystal (1 1 1) wafers, larger than 30x30 mm sup 2 were successfully obtained from a grown crystal of 50 mm diameter. Pt/CdTe/Pt detectors of dimensions 4x4x2 mm sup 3 , fabricated from the whole crystal ingot, showed an energy resolution (FWHM of 122 keV peak from a sup 5 sup 7 Co source) between 6% and 8%. Similarly, Pt/CdTe/In detectors of dimensions 2x2x0.5 mm sup 3 showed a resolution better than 3%. These characteristics encourage the practical applications of various types of CdTe detectors.

  1. Fluorescence-tagged metallothionein with CdTe quantum dots analyzed by the chip-CE technique

    Energy Technology Data Exchange (ETDEWEB)

    Guszpit, Ewelina, E-mail: ewelina.guszpit@gmail.com [Wroclaw Medical University, Department of Biomedical and Environmental Analysis, Faculty of Pharmacy (Poland); Krizkova, Sona [Mendel University in Brno, Department of Chemistry and Biochemistry, Faculty of Agronomy (Czech Republic); Kepinska, Marta [Wroclaw Medical University, Department of Biomedical and Environmental Analysis, Faculty of Pharmacy (Poland); Rodrigo, Miguel Angel Merlos [Mendel University in Brno, Department of Chemistry and Biochemistry, Faculty of Agronomy (Czech Republic); Milnerowicz, Halina [Wroclaw Medical University, Department of Biomedical and Environmental Analysis, Faculty of Pharmacy (Poland); Kopel, Pavel; Kizek, Rene [Mendel University in Brno, Department of Chemistry and Biochemistry, Faculty of Agronomy (Czech Republic)

    2015-11-15

    Quantum dots (QDs) are fluorescence nanoparticles (NPs) with unique optic properties which allow their use as probes in chemical, biological, immunological, and molecular imaging. QDs linked with target ligands such as peptides or small molecules can be used as tumor biomarkers. These particles are a promising tool for selective, fast, and sensitive tagging and imaging in medicine. In this study, an attempt was made to use QDs as a marker for human metallothionein (MT) isoforms 1 and 2. Four kinds of CdTe QDs of different sizes bioconjugated with MT were analyzed using the chip-CE technique. Based on the results, it can be concluded that MT is willing to interact with QDs, and the chip-CE technique enables the observation of their complexes. It was also observed that changes ranging roughly 6–7 kDa, a value corresponding to the MT monomer, depend on the hydrodynamic diameters of QDs; also, the MT sample without cadmium interacted stronger with QDs than MT saturated with cadmium. Results show that MT is willing to interact with smaller QDs (blue CdTe) rather than larger ones QDs (red CdTe). To our knowledge, chip-CE has not previously been applied in the study of CdTe QDs interaction with MT.Graphical Abstract.

  2. Cu-doped CdS and its application in CdTe thin film solar cell

    Directory of Open Access Journals (Sweden)

    Yi Deng

    2016-01-01

    Full Text Available Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd− and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

  3. CdTe magic-sized clusters and the use as building blocks for assembling two-dimensional nanoplatelets

    Science.gov (United States)

    Xu, Hu; Hou, Yumei; Zhang, Hua

    2017-06-01

    A facile one-pot noninjection synthesis of CdTe magic-sized clusters (MSCs) and their use as building blocks for assembling two-dimensional (2D) quantum confined nanoplatelets (NPLs) are reported. Four distinct MSC families, with the first exciton absorption peaks at 447 nm (F447), 485 nm (F485), 535 nm (F535), and 555 nm (F555), are synthesized by the reaction between cadmium oleate and trioctylphosphine tellurium (TOP-Te) in octadecene media containing primary amine and TOP at appropriate intermediate temperatures. Especially, F447 is obtained in pure form and can self-assemble in situ into 2D NPLs in the reaction solution. The formation, growth, and transformation of CdTe MSCs are monitored mainly by UV-Vis absorption spectroscopy. The pure F447 and its assembled 2D NPLs are further characterized using transmission electron microscopy. The influence of various experimental variables, including reaction temperature, the nature, and amount of capping ligands, on the stability and growth kinetics of the obtained MSC families has been systematically investigated. Experimental results indicate that the appropriate reaction temperature and the presence of long hydrocarbon chain primary amines play a crucial role in the formation of MSCs and the subsequent assembly into 2D NPLs. Primary amines can also promote ultra-small sized CdTe regular nanocrystals to transform into MSCs, and therefore, CdTe MSCs can be obtained indirectly from regularly sized nanocrystals. [Figure not available: see fulltext.

  4. Synthesis of CdTe QDs/single-walled aluminosilicate nanotubes hybrid compound and their antimicrobial activity on bacteria

    Science.gov (United States)

    Geraldo, Daniela A.; Arancibia-Miranda, Nicolás; Villagra, Nicolás A.; Mora, Guido C.; Arratia-Perez, Ramiro

    2012-12-01

    The use of molecular conjugates of quantum dots (nanocrystalline fluorophores) for biological purposes have received much attention due to their improved biological activity. However, relatively, little is known about the synthesis and application of aluminosilicate nanotubes decorated with quantum dots (QDs) for imaging and treatment of pathogenic bacteria. This paper describes for a first time, the use of single-walled aluminosilicate nanotubes (SWNT) (imogolite) as a one-dimensional template for the in situ growth of mercaptopropionic acid-capped CdTe QDs. This new nanohybrid hydrogel was synthesized by a simple reaction pathway and their enhanced optical properties were monitored by fluorescence and UV-Vis spectroscopy, confirming that the use of these nanotubes favors the confinement effects of net CdTe QDs. In addition, studies of FT-IR spectroscopy and transmission electron microscopy confirmed the non-covalent functionalization of SWNT. Finally, the antimicrobial activity of SWNT coated with CdTe QDs toward three opportunistic multi-resistant pathogens such as Salmonella typhimurium, Acinetobacter baumannii, and Pseudomonas aeruginosa were tested. Growth inhibition tests were conducted by exposing growing bacteria to CdTe QDs/SWNT hybrid compound showing that the new nano-structured composite is a potential antimicrobial agent for heavy metal-resistant bacteria.

  5. Investigation of ultrafast dynamics of CdTe quantum dots by femtosecond fluorescence up-conversion spectroscopy

    NARCIS (Netherlands)

    Yao, G.-X.; Lü, L.-H.; Gui, M.-F.; Zhang, X.-Y.; Zheng, X.-F.; Ji, X.-H.; Zhang, H.; Cui, Z.-F.

    2012-01-01

    The ultrafast carrier relaxation processes in CdTe quantum dots are investigated by femtosecond fluorescence up-conversion spectroscopy. Photo-excited hole relaxing to the edge of the forbidden gap takes a maximal time of ~ 1.6 ps with exciting at 400 nm, depending on the state of the photo-excited

  6. Synthesis of CdTe QDs/single-walled aluminosilicate nanotubes hybrid compound and their antimicrobial activity on bacteria

    Energy Technology Data Exchange (ETDEWEB)

    Geraldo, Daniela A., E-mail: daniela.geraldo@unab.cl [Universidad Andres Bello, Departamento de Ciencias Quimicas (Chile); Arancibia-Miranda, Nicolas [CEDENNA, Center for the Development of Nanoscience and Nanotechnology (Chile); Villagra, Nicolas A. [Universidad Andres Bello, Laboratorio de Microbiologia, Facultad de Ciencias Biologicas (Chile); Mora, Guido C. [Universidad Andres Bello, Unidad de Microbiologia, Facultad de Medicina (Chile); Arratia-Perez, Ramiro [Universidad Andres Bello, Departamento de Ciencias Quimicas (Chile)

    2012-12-15

    The use of molecular conjugates of quantum dots (nanocrystalline fluorophores) for biological purposes have received much attention due to their improved biological activity. However, relatively, little is known about the synthesis and application of aluminosilicate nanotubes decorated with quantum dots (QDs) for imaging and treatment of pathogenic bacteria. This paper describes for a first time, the use of single-walled aluminosilicate nanotubes (SWNT) (imogolite) as a one-dimensional template for the in situ growth of mercaptopropionic acid-capped CdTe QDs. This new nanohybrid hydrogel was synthesized by a simple reaction pathway and their enhanced optical properties were monitored by fluorescence and UV-Vis spectroscopy, confirming that the use of these nanotubes favors the confinement effects of net CdTe QDs. In addition, studies of FT-IR spectroscopy and transmission electron microscopy confirmed the non-covalent functionalization of SWNT. Finally, the antimicrobial activity of SWNT coated with CdTe QDs toward three opportunistic multi-resistant pathogens such as Salmonella typhimurium, Acinetobacter baumannii, and Pseudomonas aeruginosa were tested. Growth inhibition tests were conducted by exposing growing bacteria to CdTe QDs/SWNT hybrid compound showing that the new nano-structured composite is a potential antimicrobial agent for heavy metal-resistant bacteria.

  7. Simple synthesis of thioglycolic acid-coated CdTe quantum dots as probes for Norfloxacin lactate detection

    International Nuclear Information System (INIS)

    Wei, Xiao; Zhou, Zhiping; Hao, Tongfan; Li, Hongji; Dai, Jiangdong; Gao, Lin; Zheng, Xudong; Wang, Jixiang; Yan, Yongsheng

    2015-01-01

    In this study, a simple and effective fluorometry method has been developed and used for the determination of Norfloxacin lactate (NOR-L) by the fluorescence quenching of thioglycolic acid (TGA)-coated CdTe quantum dots (QDs). The TGA-CdTe QDs were obtained in a simple way without precursor preparation, heating, pH adjustment and N 2 protection. The CdTe QDs were characterized by TEM, UV–vis spectrophotometer and spectrofluorometer. Meanwhile, spectrofluorometer was used to evaluation of simple, convenient and highly sensitive determination of NOR-L. After the experimental conditions were optimized, a good linear relationship was obtained from 0.1–100 μg/mL with the coefficient of determination (0.99342) and the limit of detection (LOD) was 0.031 μg/mL. Moreover, a possible quenching mechanism was investigated and the CdTe QDs were also successfully used to confirm the NOR-L in pharmaceutical formations. The proposed method is rapid, simple, and applied. - Highlights: • The synthesis procedures were very simple. • The CdTe QDs were used to detect Norfloxacin lactate. • The mechanism of the proposed reaction was discussed

  8. Synthesis and surface physicochemical properties of (CdTe)0.03(ZnSe)0.97 solid solution

    Science.gov (United States)

    Podgornyi, S. O.; Podgornaya, O. T.; Skutin, E. D.; Demesko, I. P.; Lukoyanova, O. V.; Muromtsev, I. V.

    2018-01-01

    The research is centered on (CdTe)0.03(ZnSe)0.97 solid solutions. The article is aimed at developing innovative primary transducer material for semi-conductor sensors, investigating their surface physicochemical properties and evaluation their applicability in carbon monoxide diagnostics. Powders and nanofilms of (CdTe)0.03(ZnSe)0.97 solid solutions were obtained by isothermal diffusion and discrete thermal evaporation in vacuum. (CdTe)0.03(ZnSe)0.97 applicability in gas analysis was investigated. IR spectroscopy of multiple disturbed complete internal reflections and hydrolytic adsorption were used to study chemical composition and acid-base properties of (CdTe)0.03(ZnSe)0.97. Adsorption properties of the given material for carbon oxide (II) and oxygen were studied by the piezoquartz microweighing and volumetrically. The principles of adsorption, depending on the process conditions, were established. Based on the obtained experimental data, CO micro-impurities sensors were developed, the laboratory tests passed successfully

  9. Synthesis of CdTe QDs/single-walled aluminosilicate nanotubes hybrid compound and their antimicrobial activity on bacteria

    International Nuclear Information System (INIS)

    Geraldo, Daniela A.; Arancibia-Miranda, Nicolás; Villagra, Nicolás A.; Mora, Guido C.; Arratia-Perez, Ramiro

    2012-01-01

    The use of molecular conjugates of quantum dots (nanocrystalline fluorophores) for biological purposes have received much attention due to their improved biological activity. However, relatively, little is known about the synthesis and application of aluminosilicate nanotubes decorated with quantum dots (QDs) for imaging and treatment of pathogenic bacteria. This paper describes for a first time, the use of single-walled aluminosilicate nanotubes (SWNT) (imogolite) as a one-dimensional template for the in situ growth of mercaptopropionic acid-capped CdTe QDs. This new nanohybrid hydrogel was synthesized by a simple reaction pathway and their enhanced optical properties were monitored by fluorescence and UV–Vis spectroscopy, confirming that the use of these nanotubes favors the confinement effects of net CdTe QDs. In addition, studies of FT-IR spectroscopy and transmission electron microscopy confirmed the non-covalent functionalization of SWNT. Finally, the antimicrobial activity of SWNT coated with CdTe QDs toward three opportunistic multi-resistant pathogens such as Salmonella typhimurium, Acinetobacter baumannii, and Pseudomonas aeruginosa were tested. Growth inhibition tests were conducted by exposing growing bacteria to CdTe QDs/SWNT hybrid compound showing that the new nano-structured composite is a potential antimicrobial agent for heavy metal-resistant bacteria.

  10. Applicability of a portable CdTe and NaI (Tl) spectrometer for activity measure

    International Nuclear Information System (INIS)

    Fernandes, Jaquiel Salvi

    2005-02-01

    In this work it was studied the application of an in situ gamma spectrometer (ROVER) of Amptek Inc., composed by a Cadmium Telluride detector (CdTe) of 3 mm x 3 mm x 1 mm and a 30 mm x 30 mm Sodium Iodide detector doped with Thallium [NaI (Tl)). The radioactive sources used were type pastille, sealed in aluminum and polyethylene, of 241 Am, 133 Ba, 152 Eu, 3 sources of 137 Cs and soil samples contaminated with 137 Cs. It was performed a factorial planning 2 3 to optimize the in situ spectrometry system. This way it was determined that the best temperature for CdTe crystal operation is -22, deg C, with Shaping Time of 3 μS and Rise Time Discrimination (RTD) with value 3. With the help of the certified radioactive sources, we determined the efficiency curve of the two detectors. The CdTe detector was positioned at the standard distance of 1 meter of the sources and also at 4.15 cm. The NaI (Tl) detector was also positioned at the standard distance of 1 meter of the sources and at 2.8 cm. Measures were performed to determine the Minimum Detectable Activity (MDA) for both detectors. For the pastille type sources, the 137 Cs MDA for the CdTe detector at 4.15 cm, analyzing the energy line of 32 keV, was 6 kBq and at 1 meter of the 137 Cs source, analyzing the line of 661.65 keV, the MDA was 67 kBq. For soil samples, CdTe detector at 4.15 cm presented a MDA of 693 kBq.kg-l for the line of 32 keV, and for the soil sample 7 Be content the MDA found was 2867 Bq.kg -1 at 4.15 cm. For the NaI (Tl) detector, analyzing the line of 661.65 keV, the 137 Cs MDA for pastille type source at 1 meter of distance was 7 kBq, and for soil sample at 2.8 cm the measured 137 Cs MDA was 71 Bq.kg -1 . For the soil sample 7 Be content, at 2.8 cm of the Nal (Tl) detector, the obtained MDA was 91 Bq.kg -1 . Due to the minimum detectable activities found for the two detectors, we concluded that the employed in situ gamma ray spectrometer system allows the quantification of 137 Cs and 7 Be

  11. Study and development of new CdTe and CdZnTe detection structures for X and γ imagery

    International Nuclear Information System (INIS)

    Rosaz, M.

    1997-01-01

    The aim of this study is to show the interest of applying cadmium telluride (CdTe) for X- and γ- ray imaging applications, with specific technological (via contact nature) and geometric (via Frisch grids) structures suited for each application. This work is divided into three different but complementary parts: the first part describes a simulation model which allows a better understanding of CdTe based γ- ray detectors. The new feature of this model compared to previous ones, is that it is able to take into account the electric field's non uniform spatial distribution inside the detector s. The results enable us to de-convolute the influence of material and contact parameters on the spectrometric performances (energy resolution and peak/valley ratio) of CdTe based detectors; the second part presents different technological structures deposited upon CdTe, (grown by two different methods, i.e Bridgman and High Pressure Bridgman). These structures were characterised in X- and γ- ray detection; theoretical models are developed which allow a certain insight into the detection properties of each couple (material + contact); the third part deals with new contact geometries which allow a screening effect of the bulk (analogous to the Frisch grid effect in gaseous detectors) resulting in improved energy resolution and peak/valley ratios; encouraging first results on prototypes are presented and discussed. This work has allowed a better understanding of physical behaviour of CdTe based detectors, coupled with advances in technological issues to upgrade the overall performances of these detectors for application in X- and γ- ray imaging. (author)

  12. In-situ CdCl{sub 2}-treated CdTe film surface analysis by X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Vamsi Krishna, K.; Dutta, V. [Centre for Energy Studies, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 100 016 (India)

    2004-07-01

    CdTe thin films are deposited using a spray pyrolysis technique without and with in-situ CdCl{sub 2} treatment. An X-ray photoelectron spectroscopy technique is used to study the Cd, Te, O and Cl chemical environments and the valence-band spectra of the CdTe film surface. A shift in the Fermi-level position of {proportional_to}200 meV towards the valence-band maximum is observed in the CdTe film after the in-situ CdCl{sub 2} treatment, which is attributed to the increment of the Cl concentration and the improvement in the grain growth of the CdTe film. In addition to the increment of the Cl concentration, less surface oxidation is observed compared to that for ex-situ treatment. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Matrix-Assisted Laser Desorption Ionization Mass Spectrometry of Compounds Containing Carboxyl Groups Using CdTe and CuO Nanoparticles

    Directory of Open Access Journals (Sweden)

    Megumi Sakurai

    2018-03-01

    Full Text Available Matrix-assisted laser desorption ionization mass spectrometry of compounds containing carboxyl groups was carried out by using semiconductor nanoparticles (CdTe and CuO as the matrix. Salicylic acid (Sal, glucuronic acid (Glu, ibuprofen (Ibu, and tyrosine (Tyr were ionized as deprotonated species (carboxylate anions by using electrons ejected from CdTe after the photoexcitation. When CuO was used as the matrix, the peak intensity of Tyr became high compared with that obtained with CdTe. Measurements of model peptides, angiotensin II (AngII and substance P (SubP, were also carried out but the obtained peak intensities were very low. In order to explain this result, the interaction between CdTe and AngII was confirmed by diffuse reflectance spectroscopy. The results suggest that electrostatic binding between semiconductor nanoparticles and AngII prevented the efficient desorption of AngII into the gas phase.

  14. Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties

    International Nuclear Information System (INIS)

    Vigil-Galan, O.; Sanchez-Meza, E.; Ruiz, C.M.; Sastre-Hernandez, J.; Morales-Acevedo, A.; Cruz-Gandarilla, F.; Aguilar-Hernandez, J.; Saucedo, E.; Contreras-Puente, G.; Bermudez, V.

    2007-01-01

    The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are presented. The CdTe:Bi films were characterized using Photoluminescence, Hall effect, X-Ray diffraction, SEM and Photoconductivity measurements. Moreover, CdS/CdTe:Bi solar cells were made and their characteristics like short circuit current density (J sc ), open circuit voltage (V OC ), fill factor (FF) and efficiency (η) were determined. These devices were fabricated from Bi doped CdTe layers deposited on CdS with the same growth conditions than those used for the single CdTe:Bi layers. A correlation between the CdS/CdTe:Bi solar cell characteristics and the physical properties of the Bi doped CdTe thin films are presented and discussed

  15. Supply risks associated with CdTe and CIGS thin-film photovoltaics

    International Nuclear Information System (INIS)

    Helbig, Christoph; Bradshaw, Alex M.; Kolotzek, Christoph; Thorenz, Andrea; Tuma, Axel

    2016-01-01

    Highlights: • Supply risks associated with thin film photovoltaic technologies are considered. • Eleven supply risk indicators are used to evaluate Cd, Te, Cu, In, Ga, Se and Mo. • Indicator weighting based on peer assessment and an Analytic Hierarchy Process. • Various possibilities for the aggregation of elemental supply risks discussed. • Aggregated results show a marginally lower supply risk for CdTe than for CIGS. - Abstract: As a result of the global warming potential of fossil fuels there has been a rapid growth in the installation of photovoltaic generating capacity in the last decade. While this market is dominated by crystalline silicon, thin-film photovoltaics are still expected to make a substantial contribution to global electricity supply in future, due both to lower production costs and to recent increases in conversion efficiency. At present, cadmium telluride (CdTe) and copper-indium-gallium diselenide (CuIn x Ga 1−x Se 2 ) seem to be the most promising materials and currently have a share of ≈9% of the photovoltaic market. An expected stronger market penetration by these thin-film technologies raises the question as to the supply risks associated with the constituent elements. Against this background, we report here a semi-quantitative, relative assessment of mid- to long-term supply risk associated with the elements Cd, Te, Cu, In, Ga, Se and Mo. In this approach, the supply risk is measured using 11 indicators in the four categories “Risk of Supply Reduction”, “Risk of Demand Increase”, “Concentration Risk” and “Political Risk”. In a second step, the single indicator values, which are derived from publicly accessible databases, are weighted relative to each other specifically for the case of thin film photovoltaics. For this purpose, a survey among colleagues and an Analytic Hierarchy Process (AHP) approach are used, in order to obtain a relative, element-specific value for the supply risk. The aggregation of these

  16. ASTRO-H CdTe detectors proton irradiation at PIF

    International Nuclear Information System (INIS)

    Limousin, O.; Renaud, D.; Horeau, B.; Dubos, S.; Laurent, P.; Lebrun, F.; Chipaux, R.; Boatella Polo, C.; Marcinkowski, R.; Kawaharada, M.; Watanabe, S.; Ohta, M.; Sato, G.; Takahashi, T.

    2015-01-01

    Asbstract: The French Atomic Energy Commission (CEA), with the support of the European Space Agency (ESA), is partner of the Soft Gamma-Ray Detector (SGD) and the Hard X-ray Imager (HXI) onboard the 6th Japanese X-ray scientific satellite ASTRO-H (JAXA) initiated by the Institute of Space and Astronautical Science (ISAS). Both scientific instruments, one hosting a series of Compton Gamma Cameras and the other being a focal plane of a grazing incidence mirror telescope in the hard X-ray domain, are equipped with Cadmium Telluride based detectors. ASTRO-H will be operated in a Low Earth Orbit with a 31° inclination at ~550 km altitude, thus passing daily through the South Atlantic Anomaly radiation belt, a specially harsh environment where the detectors are suffering the effect of the interaction with trapped high energy protons. As CdTe detector performance might be affected by the irradiation, we investigate the effect of the accumulated proton fluence on their spectral response. To do so, we have characterized and irradiated representative samples of SGD and HXI detector under different conditions. The detectors in question, from ACRORAD, are single-pixels having a size of 2 mm by 2 mm and 750 µm thick. The Schottky contact is either made of an Indium or Aluminum for SGD and HXI respectively. We ran the irradiation test campaign at the Proton Irradiation Facility (PIF) at PSI, and ESA approved equipment to evaluate the radiation hardness of flight hardware. We simulated the proton flux expected on the sensors over the entire mission, and secondary neutrons flux due to primary proton interactions into the surrounding BGO active shielding. We eventually characterized the detector response evolution, emphasizing each detector spectral response as well as its stability by studying the so-called Polarization effect. The latter is provoking a spectral response degradation against time as a charge accumulation process occurs in Schottky type CdTe sensors. In this paper

  17. [The impact of ZnS/CdS composite window layer on the quantun efficiency of CdTe solar cell in short wavelength].

    Science.gov (United States)

    Zhang, Li-xiang; Feng, Liang-huan; Wang, Wen-wu; Xu, Hang; Wu, Li-li; Zhang, Jing-quan; Li, Wei; Zeng, Guang-gen

    2015-02-01

    ZnS/CdS composite window layer was prepared by magnetron sputtering method and then applied to CdTe solar cell. The morphology and structure of films were measured. The data of I-V in light and the quantum efficiency of CdTe solar cells with different window layers were also measured. The effect of ZnS films prepared in different conditions on the performance of CdTe solar cells was researched. The effects of both CdS thickness and ZnS/CdS composite layer on the transmission in short wavelength were studied. Particularly, the quantum efficiency of CdTe solar cells with ZnS/CdS window layer was measured. The results show as follows. With the thickness of CdS window layer reducing from 100 to 50 nm, the transmission increase 18.3% averagely in short wavelength and the quantum efficiency of CdTe solar cells increase 27.6% averagely. The grain size of ZnS prepared in 250 degrees C is smaller than prepared at room temperature. The performance of CdTe solar cells with ZnS/CdS window layer is much better if ZnS deposited at 250 degrees C. This indicates grain size has some effect on the electron transportation. When the CdS holds the same thickness, the transmission of ZnS/CdS window layer was improved about 2% in short wavelength compared with CdS window layer. The quantum efficiency of CdTe solar cells with ZnS/CdS window layer was also improved about 2% in short wavelength compared with that based on CdS window layer. These indicate ZnS/CdS composite window layer can increase the photon transmission in short wavelength so that more photons can be absorbed by the absorbent layer of CdTe solar cells.

  18. Spectroscopic study on the doping of polycrystalline CdTe layers for solar cells; Spektroskopische Untersuchungen zur Dotierung von polykristallinen CdTe-Schichten fuer Solarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Kraft, Christian

    2011-11-29

    First in the present thesis the fundamental properties of CdTe are described. In the following it is discussed, how a CdTe solar cell is generally constructed, which specialities are to be regarded, and how an improvement of the actually reachable data of such a solar cell in view of the efficiency can be reached fundamentally and in then practical realization. In the third chapter the physical foundations of the most important methods are discussed, which are applied in the framework of this thesis for the analysis of the CdTe layers. The fourth chapter describes the details of the experiments of this thesis. The fifth chapter deals with the analysis of the photoluminescence of CdTe layers. Special attention is put on the analysis of the excitonic luminescence. The sixth chapter treats the implantation of CdTe layers with phosphor. The influence of phosphorus as dopant on the PL spectra of CdTe and the correponding characteristics of implanted solar cells are presented. Also the influence of radiation damages as consequence of the ion implantation is studied in this chapter by means of the analysis of differently thick absorber layers. In the seventh chapter finally a new procedure for the fabrication of solar cells on the base of CdTe as absorber material is introduced, which shall make possible to change the stoichiometry of cadmium mand tellurium specifically and to present additionally a suited material, in order to form the doping of CdTE a solar-cell material variably. The fundamental properties of the new facility are experimentally determined, and first solar cells are fabricated with this facility and analyzed. Also an in-situ doping with phosphorus is thereby performed and the result studied.

  19. Charge separation and transfer in hybrid type II tunneling structures of CdTe and CdSe nanocrystals

    International Nuclear Information System (INIS)

    Gross, Dieter Konrad Michael

    2013-01-01

    Closely packed nanocrystal systems have been investigated in this thesis with respect to charge separation by charge carrier tunneling. Clustered and layered samples have been analyzed using PL-measurements and SPV-methods. The most important findings are reviewed in the following. A short outlook is also provided for potential further aspects and application of the presented results. The main purpose of this thesis was to find and quantify electronic tunneling transfer in closely packed self-assembled nanocrystal structures presenting quantum mechanical barriers of about 1 nm width. We successfully used hybrid assemblies of CdTe and CdSe nanocrystals where the expected type II alignment between CdTe and CdSe typically leads to a concentration of electrons in CdSe and holes in CdTe nanocrystals. We were able to prove the charge selectivity of the CdTe-CdSe nanocrystal interface which induces charge separation. We mainly investigated the effects related to the electron transfer from CdTe to CdSe nanocrystals. Closely packing was achieved by two independent methods: the disordered colloidal clustering in solution and the layered assembly on dry glass substrates. Both methods lead to an inter-particle distance of about 1 nm of mainly organic material which acts as a tunneling barrier. PL-spectroscopy was applied. The PL-quenching of the CdTe nanocrystals in hybrid assemblies indicates charge separation by electron transfer from CdTe to CdSe nanocrystals. A maximum quenching rate of up to 1/100 ps was measured leading to a significant global PL-quenching of up to about 70 % for the CdTe nanocrystals. It was shown that charge separation dynamics compete with energy transfer dynamics and that charge separation typically dominates. The quantum confinement effect was used to tune the energetic offset between the CdTe and CdSe nanocrystals. We thus observe a correlation of PL-quenching and offset of the energy states for the electron transfer. The investigated PL

  20. Charge separation and transfer in hybrid type II tunneling structures of CdTe and CdSe nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Gross, Dieter Konrad Michael

    2013-11-08

    Closely packed nanocrystal systems have been investigated in this thesis with respect to charge separation by charge carrier tunneling. Clustered and layered samples have been analyzed using PL-measurements and SPV-methods. The most important findings are reviewed in the following. A short outlook is also provided for potential further aspects and application of the presented results. The main purpose of this thesis was to find and quantify electronic tunneling transfer in closely packed self-assembled nanocrystal structures presenting quantum mechanical barriers of about 1 nm width. We successfully used hybrid assemblies of CdTe and CdSe nanocrystals where the expected type II alignment between CdTe and CdSe typically leads to a concentration of electrons in CdSe and holes in CdTe nanocrystals. We were able to prove the charge selectivity of the CdTe-CdSe nanocrystal interface which induces charge separation. We mainly investigated the effects related to the electron transfer from CdTe to CdSe nanocrystals. Closely packing was achieved by two independent methods: the disordered colloidal clustering in solution and the layered assembly on dry glass substrates. Both methods lead to an inter-particle distance of about 1 nm of mainly organic material which acts as a tunneling barrier. PL-spectroscopy was applied. The PL-quenching of the CdTe nanocrystals in hybrid assemblies indicates charge separation by electron transfer from CdTe to CdSe nanocrystals. A maximum quenching rate of up to 1/100 ps was measured leading to a significant global PL-quenching of up to about 70 % for the CdTe nanocrystals. It was shown that charge separation dynamics compete with energy transfer dynamics and that charge separation typically dominates. The quantum confinement effect was used to tune the energetic offset between the CdTe and CdSe nanocrystals. We thus observe a correlation of PL-quenching and offset of the energy states for the electron transfer. The investigated PL

  1. Electroluminescence of thin-film CdTe solar cells and modules

    Science.gov (United States)

    Raguse, John Michael

    Thin-film photovoltaics has the potential to be a major source of world electricity. Mitigation of non-uniformities in thin-film solar cells and modules may help improve photovoltaic conversion efficiencies. In this manuscript, a measurement technique is discussed in detail which has the capability of detecting such non-uniformities in a form useful for analysis. Thin-film solar cells emit radiation while operating at forward electrical bias, analogous to an LED, a phenomena known as electroluminescence (EL). This process relatively is inefficient for polycrystalline CdTe devices, on the order of 10-4%, as most of the energy is converted into heat, but still strong enough for many valuable measurements. A EL system was built at the Colorado State University Photovoltaics Laboratory to measure EL from CdTe cells and modules. EL intensity normalized to exposure time and injection current density has been found to correlate very well with the difference between ideal and measured open-circuit voltage from devices that include a GaAs cell, an AlGaAs LED, and several CdTe cells with variations in manufacturing. Furthermore, these data points were found to be in good agreement when overlaid with calibrated data from two additional sources. The magnitude of the inverse slope of the fit is in agreement with the thermal voltage and the intercept was found to have a value near unity, in agreement with theory. The expanded data set consists of devices made from one of seven different band gaps and spans eight decades of EQELED efficiencies. As expected, cells which exhibit major failure of light-dark J-V superposition did not follow trend of well-behaved cells. EL images of selected defects from CdTe cells and modules are discussed and images are shown to be highly sensitive to defects in devices, since the intensity depends exponentially on the cells' voltages. The EL technique has proven to be a useful high-throughput tool for screening of cells. In addition to EL images

  2. Imaging, microscopic analysis, and modeling of a CdTe module degraded by heat and light

    Energy Technology Data Exchange (ETDEWEB)

    Johnston, Steve; Albin, David; Hacke, Peter; Harvey, Steven P.; Moutinho, Helio; Jiang, Chun-Sheng; Xiao, Chuanxiao; Parikh, Anuja; Nardone, Marco; Al-Jassim, Mowafak; Metzger, Wyatt K.

    2018-05-01

    Photoluminescence (PL), electroluminescence (EL), and dark lock-in thermography are collected during stressing of a CdTe module under one-Sun light at an elevated temperature of 100 degrees C. The PL imaging system is simple and economical. The PL images show differing degrees of degradation across the module and are less sensitive to effects of shunting and resistance that appear on the EL images. Regions of varying degradation are chosen based on avoiding pre-existing shunt defects. These regions are evaluated using time-of-flight secondary ion-mass spectrometry and Kelvin probe force microscopy. Reduced PL intensity correlates to increased Cu concentration at the front interface. Numerical modeling and measurements agree that the increased Cu concentration at the junction also correlates to a reduced space charge region.

  3. Determination of captopril using selective photoluminescence enhancement of 2-mercaptopropionic modified CdTe quantum dots

    Science.gov (United States)

    Khan, Sarzamin; Lima, Alex A.; Larrudé, Dunieskys G.; Romani, Eric C.; Aucelio, Ricardo Q.

    2014-04-01

    A photoluminescent probe for the determination of captopril is proposed based on the enhancement of luminescence from 2-mercaptopropionic modified CdTe quantum dots (2-MPA-CdTe QDs). Under optimum conditions, the calibration model (the Langmuir binding isotherm) was linear up to 4.8 × 10-4 mol L-1 with equilibrium binding constant of 3.2 × 104 L mol-1 and limit of detection (xb + 3 sb) of 2.7 × 10-7 mol L-1 (59 ng mL-1). The approach was tested in the determination of captopril in pharmaceutical formulations and the results were in agreement with the ones obtained using reference method. The possible mechanism of interaction is also investigated by Raman and electronic absorption spectroscopy and dynamic light scattering.

  4. Prompt gamma and neutron detection in BNCT utilizing a CdTe detector.

    Science.gov (United States)

    Winkler, Alexander; Koivunoro, Hanna; Reijonen, Vappu; Auterinen, Iiro; Savolainen, Sauli

    2015-12-01

    In this work, a novel sensor technology based on CdTe detectors was tested for prompt gamma and neutron detection using boronated targets in (epi)thermal neutron beam at FiR1 research reactor in Espoo, Finland. Dedicated neutron filter structures were omitted to enable simultaneous measurement of both gamma and neutron radiation at low reactor power (2.5 kW). Spectra were collected and analyzed in four different setups in order to study the feasibility of the detector to measure 478 keV prompt gamma photons released from the neutron capture reaction of boron-10. The detector proved to have the required sensitivity to detect and separate the signals from both boron neutron and cadmium neutron capture reactions, which makes it a promising candidate for monitoring the spatial and temporal development of in vivo boron distribution in boron neutron capture therapy. Copyright © 2015 Elsevier Ltd. All rights reserved.

  5. X-ray micro-beam characterization of a small pixel spectroscopic CdTe detector

    Science.gov (United States)

    Veale, M. C.; Bell, S. J.; Seller, P.; Wilson, M. D.; Kachkanov, V.

    2012-07-01

    A small pixel, spectroscopic, CdTe detector has been developed at the Rutherford Appleton Laboratory (RAL) for X-ray imaging applications. The detector consists of 80 × 80 pixels on a 250 μm pitch with 50 μm inter-pixel spacing. Measurements with an 241Am γ-source demonstrated that 96% of all pixels have a FWHM of better than 1 keV while the majority of the remaining pixels have FWHM of less than 4 keV. Using the Diamond Light Source synchrotron, a 10 μm collimated beam of monochromatic 20 keV X-rays has been used to map the spatial variation in the detector response and the effects of charge sharing corrections on detector efficiency and resolution. The mapping measurements revealed the presence of inclusions in the detector and quantified their effect on the spectroscopic resolution of pixels.

  6. Magnetic properties of vanadium doped CdTe: Ab initio calculations

    Energy Technology Data Exchange (ETDEWEB)

    Goumrhar, F. [Laboratory of Physics of High Energy, Modeling & Simulations (LPHE-MS), Faculty of Sciences, Mohammed V University of Rabat, Av. Ibn Batouta, B.P. 1014 Rabat (Morocco); Bahmad, L., E-mail: bahmad@fsr.ac.ma [Laboratory of Magnetism and High Energy Physics (LMPHE-URAC12), Faculty of Sciences, Mohammed V University of Rabat, Av. Ibn Batouta, B.P. 1014 Rabat (Morocco); Mounkachi, O. [Material and Nanomaterial Center, MAScIR Fondation, Rabat (Morocco); Benyoussef, A. [Laboratory of Magnetism and High Energy Physics (LMPHE-URAC12), Faculty of Sciences, Mohammed V University of Rabat, Av. Ibn Batouta, B.P. 1014 Rabat (Morocco); Material and Nanomaterial Center, MAScIR Fondation, Rabat (Morocco); Hassan II Academy of Sciences and Technology, Rabat (Morocco)

    2017-04-15

    In this paper, we are applying the ab initio calculations to study the magnetic properties of vanadium doped CdTe. This study is based on the Korringa–Kohn–Rostoker method (KKR) combined with the coherent potential approximation (CPA), within the local density approximation (LDA). This method is called KKR-CPA-LDA. We have calculated and plotted the density of states (DOS) in the energy diagram for different concentrations of dopants. We have also investigated the magnetic and half-metallic properties of this compound and shown the mechanism of exchange interaction. Moreover, we have estimated the Curie temperature T{sub c} for different concentrations. Finally, we have shown how the crystal field and the exchange splittings vary as a function of the concentrations.

  7. Defects subsystem and homogeneity region of ZnTe and CdTe crystals

    Science.gov (United States)

    Horichok, Ihor; Parashchuk, Taras; Pylyponiuk, Mariia; Soroka, Oksana; Voloshynovych, Marian

    2018-03-01

    Based on the comparison of theoretical calculations of the point defects formation energy by ab initio method and their concentration by the thermodynamic potentials method with the experimental data of the Hall effect study and the homogeneity region width of zinc and cadmium tellurides, it was shown that in the ZnTe crystals, as in the CdTe crystals, at the chalcogen saturation the dominant defects are cationic vacancies and antistructural chalcogen atoms, whose point symmetry corresponds to the Td group. When both zinc and cadmium tellurides are saturated with the metal, the most probable type of the dominant point defects is the electroneutral chalcogen vacancy, the formation of which is accompanied by the significant relaxation of the nearest atoms and loss of initial symmetry.

  8. Surface defect states in MBE-grown CdTe layers

    Energy Technology Data Exchange (ETDEWEB)

    Olender, Karolina; Wosinski, Tadeusz; Fronc, Krzysztof; Tkaczyk, Zbigniew; Chusnutdinow, Sergij; Karczewski, Grzegorz [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland)

    2014-02-21

    Semiconductor surface plays an important role in the technology of semiconductor devices. In the present work we report results of our deep-level transient spectroscopy (DLTS) investigations of surface defect states in nitrogen doped p-type CdTe layers grown by the molecular-beam epitaxy technique. We observed a deep-level trap associated with surface states, with the activation energy for hole emission of 0.33 eV. DLTS peak position in the spectra for this trap, and its ionization energy, strongly depend on the electric field. Our measurements allow to determine a mechanism responsible for the enhancement of hole emission rate from the traps as the phonon-assisted tunnel effect. Density of surface defect states significantly decreased as a result of passivation in ammonium sulfide. Capacitance-voltage measurements confirmed the results obtained by the DLTS technique.

  9. Production of CdTe Semiconductor Thin Films by Electrodeposition Technique for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Ahmet PEKSÖZ

    2016-08-01

    Full Text Available Electro-deposited cadmium tellurite (CuTe thin film was grown onto ITO-coated glass substrate for 120 seconds at the room temperature and a constant cathodic potential of -0.85 V. Deposition solution was prepared from cadmium chloride (CdCl2, sodium tellurite (Na2TeO3 and pure water. The pH value of the deposition solution was adjusted to 2.0 by adding HCl. The EDX analysis shows that the film has 52% Cd and 48% Te elemental compositions. Film thickness was found to be 140 nm. The CdTe thin film exhibits p-type semiconductor character, and has an energy bandgap of 1.47 eV. 

  10. Performance optimization of CdTe and CdZnTe detectors for γ-spectrometry

    International Nuclear Information System (INIS)

    Montemont, Guillaume

    2000-01-01

    This study deals with room-temperature gamma spectrometry with CdTe and CdZnTe semiconductor detectors. The aim was the improvement of energy resolution and detection efficiency. Some different phenomena have been investigated. Electronic noise knowledge has enabled us to optimize the design of filtering. Charge transport induces signal shape uncertainty and the processing circuit has been adapted in order to account for these variations. Study and simulation of electrical current induction process has permitted the development of a new Frisch-grid based detection structure. We have reached 3% energy resolutions at 122 keV without detection efficiency loss. Finally, the remaining limits of detector performances have been estimated by focusing on gamma interaction phenomena and material non-uniformity problems. (author) [fr

  11. Electrical activity of In and Ga impurities in CdTe

    International Nuclear Information System (INIS)

    Fochuk, P.; Panchuk, O.; Korovyanko, O.

    2004-01-01

    The issue of modelling of point defect structure in In(Ga)-doped CdTe crystals has been analyzed. Contrary to previous papers, it has been shown that high-temperature point defect equilibrium modelling can be successfully achieved if sufficient experimental data are available and appropriate calculation methods are used. Room temperature free electron densities were computed for CdTe:In crystals and compared with experimental data. Since the density of point defects changes during cooling from the preparation to operational temperatures, it cannot be estimated. Therefore, a new approach, including calculation of a certain fitting Δ parameter, is proposed. Its determination allows preparation/cooling conditions necessary to prepare material with the desired electric properties to be defined

  12. Dephasing of free carriers and excitons in bulk CdTe

    International Nuclear Information System (INIS)

    Sprinzl, D.; Kunc, J.; Ostatnicky, T.; Horodysky, P.; Grill, R.; Franc, J.; Maly, P.; Nemec, P.

    2007-01-01

    In this paper we report on the measurements of the dephasing of free carriers and excitons using a self-diffraction technique in thin platelets of CdTe with different concentration of preparation-induced dislocations. We show that in a high-quality sample at low temperature the characteristic dephasing time constant is 1 ps and 2 ps for free carriers and excitons, respectively. The increased concentration of preparation-induced dislocations leads to much stronger acceleration of the dephasing for free carriers than for excitons. We also discuss the intensity and temperature dependence of the dephasing. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Pulse electron beam-induced synthesis of CdTe printed films

    International Nuclear Information System (INIS)

    Houng, M.P.; Fu, S.L.; Wu, T.S.; Leu, J.T.; Cheng, K.Y.

    1987-01-01

    In an attempt to produce a high quality single crystal CdTe film with enhanced electrical properties, screen printed Cd + Te films were prepared on an aluminium oxide substrate and then irradiated with a pulsed electron beam over the energy range 12-15 KeV. Some samples were also vacuum annealed from 410-620 0 C after irradiation. The films were characterized by x-ray diffraction, scanning electron microscopy and photoluminescence. This showed that film quality and uniformity were limited by electron beam heating, although improvements can be made by vacuum annealing. Furthermore, only polycrystalline films were produced, possibly due to a too short pulse duration and the use of a polycrystalline substrate. (U.K.)

  14. Hydrothermal synthesis of CdTe quantum dots–TiO2–graphene hybrid

    International Nuclear Information System (INIS)

    Liu, Jinghua; Li, Xin

    2014-01-01

    CdTe–TiO 2 –graphene nanocomposites were successfully synthesized via a simple and relatively general hydrothermal method. During the hydrothermal environment, GO was reduced to reduced graphene oxide (RGO), accompanying with the anchoring of TiO 2 nanoparticles on the surface of RGO. In the following process, CdTe quantum dots (QDs) were then in situ grown on the carbon basal planes. The morphologies and structural properties of the as-prepared composites were characterized by X-ray diffraction, Raman spectroscopy, transmission electron microscopy and fluorescent spectroscopy. It is hoped that our current work could pave a way towards the fabrication of QDs–TiO 2 –RGO hybrid materials.

  15. Efficient optical trapping of CdTe quantum dots by femtosecond laser pulses

    KAUST Repository

    Chiang, Weiyi

    2014-12-11

    The development in optical trapping and manipulation has been showing rapid progress, most of it is in the small particle sizes in nanometer scales, substituting the conventional continuous-wave lasers with high-repetition-rate ultrashort laser pulse train and nonlinear optical effects. Here, we evaluate two-photon absorption in optical trapping of 2.7 nm-sized CdTe quantum dots (QDs) with high-repetition-rate femtosecond pulse train by probing laser intensity dependence of both Rayleigh scattering image and the two-photon-induced luminescence spectrum of the optically trapped QDs. The Rayleigh scattering imaging indicates that the two-photon absorption (TPA) process enhances trapping ability of the QDs. Similarly, a nonlinear increase of the two-photon-induced luminescence with the incident laser intensity fairly indicates the existence of the TPA process.

  16. Spectral resolution and high-flux capability tradeoffs in CdTe detectors for clinical CT.

    Science.gov (United States)

    Hsieh, Scott S; Rajbhandary, Paurakh L; Pelc, Norbert J

    2018-04-01

    Photon-counting detectors using CdTe or CZT substrates are promising candidates for future CT systems but suffer from a number of nonidealities, including charge sharing and pulse pileup. By increasing the pixel size of the detector, the system can improve charge sharing characteristics at the expense of increasing pileup. The purpose of this work is to describe these considerations in the optimization of the detector pixel pitch. The transport of x rays through the CdTe substrate was simulated in a Monte Carlo fashion using GEANT4. Deposited energy was converted into charges distributed as a Gaussian function with size dependent on interaction depth to capture spreading from diffusion and Coulomb repulsion. The charges were then collected in a pixelated fashion. Pulse pileup was incorporated separately with Monte Carlo simulation. The Cramér-Rao lower bound (CRLB) of the measurement variance was numerically estimated for the basis material projections. Noise in these estimates was propagated into CT images. We simulated pixel pitches of 250, 350, and 450 microns and compared the results to a photon counting detector with pileup but otherwise ideal energy response and an ideal dual-energy system (80/140 kVp with tin filtration). The modeled CdTe thickness was 2 mm, the incident spectrum was 140 kVp and 500 mA, and the effective dead time was 67 ns. Charge summing circuitry was not modeled. We restricted our simulations to objects of uniform thickness and did not consider the potential advantage of smaller pixels at high spatial frequencies. At very high x-ray flux, pulse pileup dominates and small pixel sizes perform best. At low flux or for thick objects, charge sharing dominates and large pixel sizes perform best. At low flux and depending on the beam hardness, the CRLB of variance in basis material projections tasks can be 32%-55% higher with a 250 micron pixel pitch compared to a 450 micron pixel pitch. However, both are about four times worse in variance

  17. Commercial production of thin-film CdTe photovoltaic modules. 1995 annual report

    Energy Technology Data Exchange (ETDEWEB)

    Brog, T.K. [Golden Photon, Inc., CO (United States)

    1997-02-01

    This report presents a general overview of progress made in Golden Photon Inc.`s commercial production of thin-film CdTe photovoltaic modules. It describes the improvement in the number of batch runs processed through substrate deposition, all inter-connection, and encapsulation process steps; a progressive increase in the total number of panels processed each month; an improvement in cumulative process yields; and the continual attention given to modifying operating parameters of each major process step. The report also describes manpower status and staffing issues. The description of the status of subcontract progress includes engineering design; process improvement and development; cost improvement and raw materials; environment, safety, and health; and manufacturing cost and productivity optimization. Milestones and deliverables are also described.

  18. Thermodynamic properties of defects in CdTe as derived by diffusion experiments

    CERN Document Server

    Wagner, F; Kronenberg, J; Wichert, Th; Grill, R; Belas, E

    2007-01-01

    The shape of Ag profiles obtained in CdTe after 111Ag implantation and subsequent annealing strongly depends on the external conditions during the annealing procedure, yielding quite different types of diffusion profiles. By simulating these data quantitative information on different thermodynamical parameters is obtained. At the temperature of 828 K, it turns out that the experimental Ag profiles reflect the distribution of the intrinsic defects after the diffusion anneal. In this way, information on the diffusivity of the intrinsic defects, Cd interstitial and Cd vacancy, is obtained whereas for the Ag impurity only limiting values regarding ionization energy, the diffusivity of interstitially incorporated and the thermal stability of substitutionally incorporated Ag are obtained.

  19. Multidirectional channeling analysis of epitaxial CdTe layers using an automatic RBS/channeling system

    Energy Technology Data Exchange (ETDEWEB)

    Wielunski, L.S.; Kenny, M.J. [CSIRO, Lindfield, NSW (Australia). Applied Physics Div.

    1993-12-31

    Rutherford Backscattering Spectrometry (RBS) is an ion beam analysis technique used in many fields. The high depth and mass resolution of RBS make this technique very useful in semiconductor material analysis [1]. The use of ion channeling in combination with RBS creates a powerful technique which can provide information about crystal quality and structure in addition to mass and depth resolution [2]. The presence of crystal defects such as interstitial atoms, dislocations or dislocation loops can be detected and profiled [3,4]. Semiconductor materials such as CdTe, HgTe and Hg+xCd{sub 1-x}Te generate considerable interest due to applications as infrared detectors in many technological areas. The present paper demonstrates how automatic RBS and multidirectional channeling analysis can be used to evaluate crystal quality and near surface defects. 6 refs., 1 fig.

  20. Modelisation of the growth of extended defects created by electron irradiation in CdTe

    International Nuclear Information System (INIS)

    Gue, A.M.; Esteve, D.; Mazel, A.

    1989-01-01

    After a brief review of the experimental features of dislocation loops created in cadmium telluride by high energy electron irradiation, we present a theoretical modelisation of the growth of extended defects. The basic method of the Chemical Reaction Rate Theory has been modified in order to take into account: the instability of small clusters, the effects of surfaces, the fact that CdTe is a binary compound. The comparison between theoretical and experimental results leads us to conclude that the vacancy-interstitial recombination energy (E v ) is different from the diinterstitial formation energy (E i ). The values of these energies have been determined: E i =.35eV, E v =.25eV, E d =1.1eV (small clusters dissociation energy). This work has also shown that the lake of dislocation loops at high irradiation temperature (T>480K) is not only a thin film effect but is due to clusters instability [fr

  1. Study of dislocation loops growth in CdTe under high voltage electron irradiation

    International Nuclear Information System (INIS)

    Gue, A.M.; Mazel, A.

    1988-01-01

    Some results of the study of extended defects observed in CdTe after irradiation with electrons of energy considerably higher than the threshold values for displacement of cadmium and tellurium are reported in this paper. During irradiation, the displaced atoms cluster and interstitial dislocation loops appear. This effect seems to be particularly sensitive to three experimental parameters: the accelerating voltage, the dose and the specimen temperature. It is shown that the density of defects becomes greater when the accelerating voltage is raised. Due to thermal effects, the size of the loops increases and their number decreases when the specimen temperature is increased. When the irradiation time is long enough, another kind of defects due to vacancies can be observed [fr

  2. Interaction of Water-Soluble CdTe Quantum Dots with Bovine Serum Albumin

    Science.gov (United States)

    2011-01-01

    Semiconductor nanoparticles (quantum dots) are promising fluorescent markers, but it is very little known about interaction of quantum dots with biological molecules. In this study, interaction of CdTe quantum dots coated with thioglycolic acid (TGA) with bovine serum albumin was investigated. Steady state spectroscopy, atomic force microscopy, electron microscopy and dynamic light scattering methods were used. It was explored how bovine serum albumin affects stability and spectral properties of quantum dots in aqueous media. CdTe–TGA quantum dots in aqueous solution appeared to be not stable and precipitated. Interaction with bovine serum albumin significantly enhanced stability and photoluminescence quantum yield of quantum dots and prevented quantum dots from aggregating. PMID:27502633

  3. The interactions between CdTe quantum dots and proteins: understanding nano-bio interface

    Directory of Open Access Journals (Sweden)

    Shreeram S. Joglekar

    2017-01-01

    Full Text Available Despite remarkable developments in the nanoscience, relatively little is known about the physical (electrostatic interactions of nanoparticles with bio macromolecules. These interactions can influence the properties of both nanoparticles and the bio-macromolecules. Understanding this bio-interface is a prerequisite to utilize both nanoparticles and biomolecules for bioengineering. In this study, luminescent, water soluble CdTe quantum dots (QDs capped with mercaptopropionic acid (MPA were synthesized by organometallic method and then interaction between nanoparticles (QDs and three different types of proteins (BSA, Lysozyme and Hemoglobin were investigated by fluorescence spectroscopy at pH= 7.4. Based on fluorescence quenching results, Stern-Volmer quenching constant (Ksv, binding constant (Kq and binding sites (n for proteins were calculated. The results show that protein structure (e.g.,globular, metalloprotein, etc. has a significant role in Protein-Quantum dots interactions and each type of protein influence physicochemical properties of Quantum dots differently.

  4. Thin-film-based CdTe photovoltaic module characterization: Measurements and energy prediction improvement

    Science.gov (United States)

    Lay-Ekuakille, A.; Arnesano, A.; Vergallo, P.

    2013-01-01

    Photovoltaic characterization is a topic of major interest in the field of renewable energy. Monocrystalline and polycrystalline modules are mostly used and, hence characterized since many laboratories have data of them. Conversely, cadmium telluride (CdTe), as thin-film module are, in some circumstances, difficult to be used for energy prediction. This work covers outdoor testing of photovoltaic modules, in particular that regarding CdTe ones. The scope is to obtain temperature coefficients that best predict the energy production. A First Solar (K-275) module has been used for the purposes of this research. Outdoor characterizations were performed at Department of Innovation Engineering, University of Salento, Lecce, Italy. The location of Lecce city represents a typical site in the South Italy. The module was exposed outdoor and tested under clear sky conditions as well as under cloudy sky ones. During testing, the global-inclined irradiance varied between 0 and 1500 W/m2. About 37 000 I-V characteristics were acquired, allowing to process temperature coefficients as a function of irradiance and ambient temperature. The module was characterized by measuring the full temperature-irradiance matrix in the range from 50 to 1300 W/m2 and from -1 to 40 W/m2 from October 2011 to February 2012. Afterwards, the module energy output, under real conditions, was calculated with the "matrix method" of SUPSI-ISAAC and the results were compared with the five months energy output data of the same module measured with the outdoor energy yield facility in Lecce.

  5. Thin-film-based CdTe photovoltaic module characterization: measurements and energy prediction improvement.

    Science.gov (United States)

    Lay-Ekuakille, A; Arnesano, A; Vergallo, P

    2013-01-01

    Photovoltaic characterization is a topic of major interest in the field of renewable energy. Monocrystalline and polycrystalline modules are mostly used and, hence characterized since many laboratories have data of them. Conversely, cadmium telluride (CdTe), as thin-film module are, in some circumstances, difficult to be used for energy prediction. This work covers outdoor testing of photovoltaic modules, in particular that regarding CdTe ones. The scope is to obtain temperature coefficients that best predict the energy production. A First Solar (K-275) module has been used for the purposes of this research. Outdoor characterizations were performed at Department of Innovation Engineering, University of Salento, Lecce, Italy. The location of Lecce city represents a typical site in the South Italy. The module was exposed outdoor and tested under clear sky conditions as well as under cloudy sky ones. During testing, the global-inclined irradiance varied between 0 and 1500 W/m(2). About 37,000 I-V characteristics were acquired, allowing to process temperature coefficients as a function of irradiance and ambient temperature. The module was characterized by measuring the full temperature-irradiance matrix in the range from 50 to 1300 W/m(2) and from -1 to 40 W/m(2) from October 2011 to February 2012. Afterwards, the module energy output, under real conditions, was calculated with the "matrix method" of SUPSI-ISAAC and the results were compared with the five months energy output data of the same module measured with the outdoor energy yield facility in Lecce.

  6. Inflight proton activation and damage on a CdTe detection plane

    Science.gov (United States)

    Simões, N.; Maia, J. M.; Curado da Silva, R. M.; Ghithan, S.; Crespo, P.; do Carmo, S. J. C.; Alves, Francisco; Moita, M.; Auricchio, N.; Caroli, E.

    2018-01-01

    Future high-energy space telescope missions require further analysis of orbital environment induced activation and radiation damage on main instruments. A scientific satellite is exposed to the charged particles harsh environment, mainly geomagnetically trapped protons (up to ∼300 MeV) that interact with the payload materials, generating nuclear activation background noise within instruments' operational energy range and causing radiation damage in detector material. As a consequence, instruments' performances deteriorate during the mission time-frame. In order to optimize inflight operational performances of future CdTe high-energy telescope detection planes under orbital radiation environment, we measured and analyzed the effects generated by protons on CdTe ACRORAD detectors with 2.56 cm2 sensitive area and 2 mm thickness. To carry-out this study, several sets of measurements were performed under a ∼14 MeV cyclotron proton beam. Nuclear activation radionuclides' identification was performed. Estimation of activation background generated by short-lived radioisotopes during one day was less than ∼1.3 ×10-5 counts cm-2 s-1 keV-1 up to 800 keV. A noticeable gamma-rays energy resolution degradation was registered (∼60% @ 122 keV, ∼14% @ 511 and ∼2.2% @ 1275 keV) after an accumulated proton fluence of 4.5 ×1010 protons cm-2, equivalent to ∼22 years in-orbit fluence. One year later, the energy resolution of the irradiated prototype showed a good level of performancerecovery.

  7. Direct measurement of clinical mammographic x-ray spectra using a CdTe spectrometer.

    Science.gov (United States)

    Santos, Josilene C; Tomal, Alessandra; Furquim, Tânia A; Fausto, Agnes M F; Nogueira, Maria S; Costa, Paulo R

    2017-07-01

    To introduce and evaluate a method developed for the direct measurement of mammographic x-ray spectra using a CdTe spectrometer. The assembly of a positioning system and the design of a simple and customized alignment device for this application is described. A positioning system was developed to easily and accurately locate the CdTe detector in the x-ray beam. Additionally, an alignment device to line up the detector with the central axis of the radiation beam was designed. Direct x-ray spectra measurements were performed in two different clinical mammography units and the measured x-ray spectra were compared with computer-generated spectra. In addition, the spectrometer misalignment effect was evaluated by comparing the measured spectra when this device is aligned relatively to when it is misaligned. The positioning and alignment of the spectrometer have allowed the measurements of direct mammographic x-ray spectra in agreement with computer-generated spectra. The most accurate x-ray spectral shape, related with the minimal HVL value, and high photon fluence for measured spectra was found with the spectrometer aligned according to the proposed method. The HVL values derived from both simulated and measured x-ray spectra differ at most 1.3 and 4.5% for two mammography devices evaluated in this study. The experimental method developed in this work allows simple positioning and alignment of a spectrometer for x-ray spectra measurements given the geometrical constraints and maintenance of the original configurations of mammography machines. © 2017 American Association of Physicists in Medicine.

  8. Preparation and characterization of pulsed laser deposited CdTe thin films at higher FTO substrate temperature and in Ar + O2 atmosphere

    International Nuclear Information System (INIS)

    Ding, Chao; Ming, Zhenxun; Li, Bing; Feng, Lianghuan; Wu, Judy

    2013-01-01

    Highlights: • CdTe films were deposited by PLD at high substrate temperatures (400 °C, 550 °C). • CdTe films were achieved under the atmosphere (1.2 Torr) of Ar mixed with O 2 . • Deposited CdTe films were cubic phase and had strong (1 0 0) preferred orientation. • Scanning electron microscope (SEM) showed an average grain size of 0.3–0.6 μm. • The ultra-thin film (CdS/PLD-CdTe) solar cell with efficiency of 6.68% was made. -- Abstract: Pulsed laser deposition (PLD) is one of the promising techniques for depositing cadmium telluride (CdTe) thin films. It has been reported that PLD CdTe thin films were almost deposited at the lower substrate temperatures ( 400 °C). In this paper, CdTe layers were deposited by PLD (KrF, λ = 248 nm, 10 Hz) at different higher substrate temperatures (T s ). Excellent performance of CdTe films was achieved at higher substrate temperatures (400 °C, 550 °C) under an atmosphere of Ar mixed with O 2 (1.2 Torr). X-ray diffraction analysis confirmed the formation of CdTe cubic phase with a strong (1 0 0) preferential orientation at all substrates temperatures on 60 mJ laser energy. The optical properties of CdTe were investigated, and the band gaps of CdTe films were 1.51 eV and 1.49 eV at substrate temperatures of 400 °C and 550 °C, respectively. Scanning electron microscopy (SEM) showed an average grain size of 0.3–0.6 μm. Thus, under these conditions of the atmosphere of Ar + O 2 (15 Torr) and at the relatively high T s (500 °C), an thin-film (FTO/PLD-CdS (100 nm)/PLD-CdTe (∼1.5 μm)/HgTe: Cu/Ag) solar cell with an efficiency of 6.68% was fabricated

  9. Electrical properties of various aggregate states of matter / Электрические свойства разных агрегатных состояний вещества / Električna svojstva različitih agregatnih stanja materije

    Directory of Open Access Journals (Sweden)

    Leonid I. Gretchikhin

    2017-01-01

    Full Text Available Electrical properties of solids are caused by elastic polarization of clusters in case of metals while those of dielectrics result from the orientation polarization of induced and built-in electric dipoles. Orientation polarization stems from the interaction of free built-in electric dipoles with an external electric field. A physical model of the dielectric permittivity formation of metals, electrolytes, plasma, ferrites, and ferroelectrics has been developed. Theoretical calculations of the dielectric permittivity of a number of ferrites and barium titanate have been performed in particular. / Электрические свойства твердых тел обусловлены упругой поляризацией кластеров в металлах, а в диэлектриках - ориентационной поляризацией наведенных и встроенных электрических диполей. Ориентационная поляризация обусловлена взаимодействием свободных встроенных электрических диполей с внешним электрическим полем. Разработана физическая модель формирования диэлектрической проницаемости металлов, электролитов, плазмы, ферритов и сегнетоэлектриков. Конкретно выполнен теоретический расчет диэлектрической проницаемости ряда ферритов и титаната бария. / Električna svojstva čvrstih tela prouzrokovana su elastičnom polarizacijom klastera u slučaju metala, dok su dielektrična svojstva rezultat orijentacijske polarizacije indukovanih i ugrađenih električnih dipolova. Orijentacijska polarizacija proizlazi iz interakcije slobodnih ugrađenih električnih dipolova sa spolja

  10. Structural and optical properties of Cu-doped CdTe films with hexagonal phase grown by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    F. de Moure-Flores

    2012-06-01

    Full Text Available Cu-doped CdTe thin films were prepared by pulsed laser deposition on Corning glass substrates using powders as target. Films were deposited at substrate temperatures ranging from 100 to 300 °C. The X-ray diffraction shows that both the Cu-doping and the increase in the substrate temperature promote the presence of the hexagonal CdTe phase. For a substrate temperature of 300 °C a CdTe:Cu film with hexagonal phase was obtained. Raman and EDS analysis indicate that the films grew with an excess of Te, which indicates that CdTe:Cu films have p-type conductivity.

  11. CdTe and Cd sub 1 sub - sub x Zn sub x Te for nuclear detectors: facts and fictions

    CERN Document Server

    Fougeres, P; Hageali, M; Koebel, J M; Regal, R

    1999-01-01

    Both CdTe and Cd sub 1 sub - sub x Zn sub x Te (CZT) can be considered from their physical properties as very good materials for room temperature X- and gamma-rays detection. However, despite years of intense material research, no significant advance has been made to help one to choose between both semiconductors. This paper reviews a few facts about CdTe and CZT to attempt to draw a real comparison between both. THM-CdTe and HPB-CZT have been grown and characterized in Strasbourg. Crystal growth, alloying effects, transport properties and defects are reviewed on the basis of our results and the published ones. The results show that it is still very difficult to claim which one is the best.

  12. Comparative study for small computer supported clearance determination with 131iodine hippuran using CdTe detectors

    International Nuclear Information System (INIS)

    Duerr, G.

    1986-01-01

    With the goal to work out a simple, non-invasive method for the total clearance determination also for immobile patients, we carried out this clearance study with CdTe semi-conductor detectors. The 131 iodine hippuran clearance determination was carried out on 69 patients in the nuclear medicine department of the Radiological Policlinic in the framework of a routine diagnosis with ambulant and stationary patients with a gamma camera and a connecting evaluation system. At the same time we recorded the shoulder curves using two CdTe semi-conductor detectors and deposited the data in a portable semi-conductor memory. Next the hypotheses for the routine use with the inclusion of commercially common small computers was worked out. The plasma disappearance curves which were recorded over the shoulder region were evaluated with a small computer according to the method of the modified Oberhausen tables and the Oberhausen formula. (orig./DG) [de

  13. Investigation of CIS/CIGS and CdTe solar cells scribing with high-power fibre short pulse lasers

    Science.gov (United States)

    Hernandez, Yves; Lotter, Erwin; Bermudez, Veronica; Bosio, Alessio; Salin, François; Hueske, Marc; Selleri, Stefano; Bertrand, Anthony; Duterte, Charles

    2012-06-01

    We present here some of the last results of the EUROPEAN project ALPINE. We present both the development of an adjustable fibre laser pulse source and scribing results on CdTe and CIGS solar cells. The scribing tests were performed at three different pulse durations: 400 fs, 8 ps and 250 ps. The results obtained with 250 ps are already very promising for P3 steps in both CdTe and CIGS solar cells. In both cases the results were validated electrically. In the case of P3 scribing for CIGS solar cells, shunt resistances as high as 125 kΩ.cm were obtained. Isolation resistances were higher than 1 MΩ.cm. The processing speed was 2 m/s.

  14. Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions

    Science.gov (United States)

    Ramos-Ruiz, Adriana; Wilkening, Jean V.; Field, James A.; Sierra-Alvarez, Reyes

    2017-01-01

    A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. PMID:28472709

  15. Development of a novel deltamethrin sensor based on molecularly imprinted silica nanospheres embedded CdTe quantum dots

    Science.gov (United States)

    Ge, Shenguang; Lu, Juanjuan; Ge, Lei; Yan, Mei; Yu, Jinghua

    2011-09-01

    A novel procedure for the determination of deltmethrin (DM) is reported. The water-soluble CdTe quantum dots (QDs) and highly fluorescent silica molecularly imprinted nanospheres embedded CdTe QDs (CdTe-SiO 2-MIPs) were prepared and characterized by fluorescence spectroscopy, UV-vis spectroscopy, TEM and IR. The fluorescence nanosensor based CdTe-SiO 2-MIPs is developed. The possible quenching mechanism is discussed by DM. Under optimal conditions, the relative fluorescence intensity of CdTe-SiO 2-MIPs decreased with increasing DM by a Stern-Volmer type equation in the concentration range of 0.5-35.0 μg mL -1, the corresponding detection limit is 0.16 μg mL -1. The developed sensor based on CdTe-SiO 2-MIPs was applied to determine DM in fruit and vegetable samples.

  16. Application of the regular associated solution model to the Cd-Te and Hg-Te binary systems

    Science.gov (United States)

    Kelley, J. D.; Martin, B. G.; Szofran, F. R.; Lehoczky, S. L.

    1982-01-01

    The regular associated solution model is used to treat the phase diagrams of the binary II-VI semiconductor alloy systems Hg-Te and Cd-Te. The equations for the species activity coefficients are used without approximations regarding the magnitudes of the various binary interchange energies or the functional dependence on component mol fraction. The values of the four-adjustable parameters required for description of each system are fixed by fitting liquidus data, and the resulting activity coefficients are used to calculate component partial pressures, which are compared with experimental values as an indpendent check of the validity of the model. The results show that the regular associated solution model provides a usefully accurate, but not complete, description for both the Hg-Te and Cd-Te systems. The relationship of this work to previous investigations is discussed.

  17. Fluorescence Determination of Warfarin Using TGA-capped CdTe Quantum Dots in Human Plasma Samples.

    Science.gov (United States)

    Dehbozorgi, A; Tashkhourian, J; Zare, S

    2015-11-01

    In this study, some effort has been performed to provide low temperature, less time consuming and facile routes for the synthesis of CdTe quantum dots using ultrasound and water soluble capping agent thioglycolic acid. TGA-capped CdTe quantum dots were characterized through x-ray diffraction, transmission electron microscopy, Fourier transform infrared, ultraviolet-visible and fluorescence spectroscopy. The prepared quantum dots were used for warfarin determination based on the quenching of the fluorescence intensity in aqueous solution. Under the optimized conditions, the linear range of quantum dots fluorescence intensity versus the concentration of warfarin was 0.1-160.0 μM, with the correlation coefficient of 0.9996 and a limit of detection of 77.5 nM. There was no interference to coexisting foreign substances. The selectivity of the sensor was also tested and the results show that the developed method possesses a high selectivity for warfarin.

  18. Flexible CdTe Solar Cells and Modules: Cooperative Research and Development Final Report, CRADA Number CRD-14-548

    Energy Technology Data Exchange (ETDEWEB)

    Barnes, Teresa [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2016-05-01

    Lucintech and NREL will collaborate to develop flexible CdTe solar cells on flexible glass using sputtering and other deposition technologies. This initial work will be conducted under the DOE funded Foundational Program to Advance Cell Efficiency (FPACE) 1 project, and the interaction with Lucintech will focus on scaling up and transferring the high efficiency cell processes to module production on a pilot line.

  19. Solution-Processed Efficient Nanocrystal Solar Cells Based on CdTe and CdS Nanocrystals

    Directory of Open Access Journals (Sweden)

    Songwei Liu

    2018-01-01

    Full Text Available Solution-processed CdTe nanocrystals solar cells have attracted much attention due to their low cost, low material consumption, and potential for roll-to-roll production. Among all kinds of semiconductor materials, CdS exhibits the lowest lattice mismatch with CdTe, which permits high junction quality and high device performance. In this study, high quality CdS nanocrystals were prepared by a non-injection technique with tetraethylthiuram disufide and 2,2′-dithiobisbenzothiazole as the stabilizers. Based on the CdTe and CdS nanocrystals, devices with the architecture of ITO/ZnO/CdS/CdTe/MoOx/Au were fabricated successfully by a solution process under ambient condition. The effects of annealing conditions, film thickness, and detailed device structure on the CdTe/CdS nanocrystal solar cells were investigated and discussed in detail. We demonstrate that high junction quality can be obtained by using CdS nanocrystal thin film compared to traditional CdS film via chemical bath deposition (CBD. The best device had short circuit current density (Jsc, open circuit voltage (Voc and fill factor (FF of 17.26 mA/cm2, 0.56 V, and 52.84%, respectively, resulting in a power conversion efficiency (PCE of 5.14%, which is significantly higher than that reported using CBD CdS as the window layer. This work provides important suggestions for the further improvement of efficiency in CdTe nanocrystal solar cells.

  20. Use of photoluminescence spectroscopy to characterize the crystalline quality of CdTe films grown by a modified CSVT technique

    International Nuclear Information System (INIS)

    Mendoza-Alvarez, J.G.; Sanchez-Sinencio, F.; Zelaya, O.; Gonzalez-Hernandez, Y.J.; Cardenas, M.; Chao, S.S.

    1987-01-01

    The authors have employed photoluminescence measurements at 10-300 0 K to study the effects of deposition parameters, surface preparation and heat treatment on the properties of CdTe polycrystalline thin films. The films were grown using a modified hot wall close spaced vapor transport system. The authors found strong differences in the photoluminescence spectra of samples grown under different conditions. Heat treatments in the as-grown samples increase the average particle size and reduce the native defect density

  1. Design of a hybrid gas proportional counter with CdTe guard counters for 14C dating system

    International Nuclear Information System (INIS)

    Zhang, L.; Takahashi, H.; Hinamoto, N.; Nakazawa, M.; Yoshida, K.

    2002-01-01

    Nowadays uniform, low-cost and large-size compound semiconductor detectors are available up to several square centimeters. We are trying to combine this technology with conventional gas detectors to upgrade an anticoincidence type proportional counter, Oeschger-type thin wall counter of 2.2 l, used for a 14 C dating facility at the University of Tokyo. In order to increase the ratio of the signal to the background for smaller quantity of samples less than 1 g, an effective approach is to minimize the detector volume at higher gas pressure. However, the anticoincidence function suffers from such a small volume. Therefore we designed a new active wall gas counter of 0.13 l counting volume using CdTe compound semiconductor detectors as the wall of the gas proportional counter to perform anticoincidence. Simulation study showed that at noise thresholds less than 70 keV, the wall counters can reject above 99.8% of events arising from outer gamma rays. Measured noise levels of CdTe detectors were smaller than 24 keV which is low enough for 99.8% anticoincidence efficiency. The experiment showed an anticoincidence efficiency for outer gamma rays from 70% to 80%, similar to that of the old 14 C counter. The lost anticoincidence efficiency results from the area of 21.74% which was not covered with CdTe due to two holes for the path of the center anode wire and slots between every two sides of CdTe detectors

  2. Development of a Schottky CdTe Medipix3RX hybrid photon counting detector with spatial and energy resolving capabilities

    Energy Technology Data Exchange (ETDEWEB)

    Gimenez, E.N., E-mail: Eva.Gimenez@diamond.ac.uk [Diamond Light Source, Harwell Campus, Oxforshire OX11 0DE (United Kingdom); Astromskas, V. [University of Surrey (United Kingdom); Horswell, I.; Omar, D.; Spiers, J.; Tartoni, N. [Diamond Light Source, Harwell Campus, Oxforshire OX11 0DE (United Kingdom)

    2016-07-11

    A multichip CdTe-Medipix3RX detector system was developed in order to bring the advantages of photon-counting detectors to applications in the hard X-ray range of energies. The detector head consisted of 2×2 Medipix3RX ASICs bump-bonded to a 28 mm×28 mm e{sup −} collection Schottky contact CdTe sensor. Schottky CdTe sensors undergo performance degrading polarization which increases with temperature, flux and the longer the HV is applied. Keeping the temperature stable and periodically refreshing the high voltage bias supply was used to minimize the polarization and achieve a stable and reproducible detector response. This leads to good quality images and successful results on the energy resolving capabilities of the system. - Highlights: • A high atomic number (CdTe sensor based) photon-counting detector was developed. • Polarization effects affected the image were minimized by regularly refreshing the bias voltage and stabilizing the temperature. • Good spatial resolution and image quality was achieved following this procedure.

  3. Investigation of bearing inner ring-cage thermal characteristics based on CdTe quantum dots fluorescence thermometry

    International Nuclear Information System (INIS)

    Yan, Ke; Yan, Bei; Li, Ben Q.; Hong, Jun

    2017-01-01

    Highlights: • A novel method for bearing inner ring/cage thermal monitoring was first presented. • Temperature rise of bearing inner ring in real work condition was obtained. • The rotation speed (6000 r/min) measured here is much higher than all the existing methods. - Abstract: A novel wireless temperature sensor and non-intrusive temperature measurement method for bearing monitoring were proposed in this paper, based on spectrum parameter analysis of CdTe quantum dots films. The CdTe QDs were synthesized and were used in constructing of a sensor film by means of Layer-by-layer Electrostatic Self-assembly method. The fluorescence spectrum properties of the sensor were characterized. At rotation speed 5000–6000 r/min, bearing cage and inner ring temperature were presented first in this paper by the CdTe QDs sensor. The results were verified by theoretical analysis and by thermocouples, with an error typically below 10% or smaller. Compared to the traditional outer ring monitoring, the measurement and monitoring of bearing rolling elements is of very importance, especially at high rotation speed.

  4. Health, safety and environmental risks from the operation of CdTe and CIS thin-film modules

    International Nuclear Information System (INIS)

    Steinberger, Hartmut

    1998-01-01

    This paper identifies the materials embedded in on a type of CIS (Copper indium diselenide) and four different types of CdTe (cadmium telluride) thin-film modules. It refers to the results of our outdoor leaching experiments on photovoltaic (PV) samples broken into small fragments. Estimations for modules accidents on the roof or in the garden of a residential house, e.g. leaching of hazardous materials into water or soil, are given. The outcomes of our estimations show some module materials released into water or oil during leaching accidents. In a worst-case scenario for CdTe modules the leached cadmium concentration in the collected water is estimated to be no higher than the German drinking water limit concentration. For the CIS module scenario the estimated leached element concentrations are about one to two orders of magnitude below the German drinking water limit concentration. For broken CIS and CdTe modules on the ground no critical increase of the natural element concentration is observed after leaching into the soil for 1 year. (Author)

  5. Distributed Bragg reflectors obtained by combining Se and Te compounds: Influence on the luminescence from CdTe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Rousset, J.-G., E-mail: j-g.rousset@fuw.edu.pl; Kobak, J.; Janik, E.; Slupinski, T.; Golnik, A.; Kossacki, P.; Nawrocki, M.; Pacuski, W. [Faculty of Physics, Institute of Experimental Physics, University of Warsaw, ul. Pasteura 5, PL-02-093 Warszawa (Poland); Parlinska-Wojtan, M. [Institute of Nuclear Physics, Polish Academy of Sciences, PL-31342 Krakow (Poland)

    2016-05-14

    We report on the optical properties of structures containing self assembled CdTe quantum dots (QDs) combined with Te and Se based distributed Bragg reflectors either in a half cavity geometry with a relatively broad cavity mode or in a full cavity geometry where the cavity mode is much narrower. We show that for both structures the extraction coefficient of the light emitted from the QDs ensemble is enhanced by more than one order of magnitude with respect to the QDs grown on a ZnTe buffer. However, a single QD line broadening is observed and attributed to an unintentional incorporation of Se in the vicinity of the CdTe QDs. We show that postponing the QDs growth for 24 h after the distributed Bragg reflector deposition allows recovering sharp emission lines from individual QDs. This two step growth method is proven to be efficient also for the structures with CdTe QDs containing a single Mn{sup 2+} ion.

  6. Interactions between N-acetyl-L-cysteine protected CdTe quantum dots and doxorubicin through spectroscopic method

    International Nuclear Information System (INIS)

    Yang, Xiupei; Lin, Jia; Liao, Xiulin; Zong, Yingying; Gao, Huanhuan

    2015-01-01

    Highlights: • CdTe quantum dots with the diameter of 3–5 nm were synthesized in aqueous solution. • The modified CdTe quantum dots showed well fluorescence properties. • The interaction between the CdTe quantum dots and doxorubicin (DR) was investigated. - Abstract: N-acetyl-L-cysteine protected cadmium telluride quantum dots with a diameter of 3–5 nm were synthesized in aqueous solution. The interaction between N-acetyl-L-cysteine/cadmium telluride quantum dots and doxorubicin was investigated by ultraviolet–visible absorption and fluorescence spectroscopy at physiological conditions (pH 7.2, 37 °C). The results indicate that electron transfer has occurred between N-acetyl-L-cysteine/cadmium telluride quantum dots and doxorubicin under light illumination. The quantum dots react readily with doxorubicin to form a N-acetyl-L-cysteine/cadmium telluride-quantum dots/doxorubicin complex via electrostatic attraction between the −NH 3 + moiety of doxorubicin and the −COO − moiety of N-acetyl-L-cysteine/cadmium telluride quantum dots. The interaction of N-acetyl-L-cysteine/cadmium telluride-quantum dots/doxorubicin complex with bovine serum albumin was studied as well, showing that the complex might induce the conformation change of bovine serum due to changes in microenvironment of bovine serum

  7. Observation of Hg-diffusion in CdTe using heavy ion (40MeV-O5+) backscattering

    International Nuclear Information System (INIS)

    Otake, H.; Takita, K.; Murakami, K.; Masuda, K.; Kudo, H.; Seki, S.

    1984-01-01

    Diffusion of Hg in the near-surface region of CdTe crystals was observed by means of 40MeV-O 5+ ion backscattering. CdTe crystals immersed in Hg were kept in furnace at 280 -- 340 0 C for 2 -- 240hours. The backscattering spectra of these crystals were measured. The concentration of the diffused Hg atoms in the surface reached to 4 x 10 20 cm -3 , and Hg distribution was observed up to 1.4 μm from surface. Temperature dependence of the diffusion coefficients was determined as D = 5 x 10 3 exp (-2.0 +- 0.3eV/kT) cm 2 /sec. Hg-diffusion was not observed in the case of CdTe kept in Hg with a small amount of Cd. These facts suggest that Hg diffusion is controlled by the diffusion of Cd-vacancy. A method of observing the Hg-atoms profile in the near-surface region of the semiconductor was established. (author)

  8. Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

  9. Design and optimization of large area thin-film CdTe detector for radiation therapy imaging applications.

    Science.gov (United States)

    Parsai, E Ishmael; Shvydka, Diana; Kang, Jun

    2010-08-01

    The authors investigate performance of thin-film cadmium telluride (CdTe) in detecting high-energy (6 MV) x rays. The utilization of this material has become technologically feasible only in recent years due to significant development in large area photovoltaic applications. The CdTe film is combined with a metal plate, facilitating conversion of incoming photons into secondary electrons. The system modeling is based on the Monte Carlo simulations performed to determine the optimized CdTe layer thickness in combination with various converter materials. The authors establish a range of optimal parameters producing the highest DQE due to energy absorption, as well as signal and noise spatial spreading. The authors also analyze the influence of the patient scatter on image formation for a set of detector configurations. The results of absorbed energy simulation are used in device operation modeling to predict the detector output signal. Finally, the authors verify modeling results experimentally for the lowest considered device thickness. The proposed CdTe-based large area thin-film detector has a potential of becoming an efficient low-cost electronic portal imaging device for radiation therapy applications.

  10. Effect of CdCl{sub 2} treatment on structural and electronic property of CdTe thin films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Islam, M.A. [Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Hossain, M.S.; Aliyu, M.M. [Department of Electrical, Electronic and Systems Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Karim, M.R. [Center of Excellence for Research in Engineering Materials (CEREM) College of Engineering, King Saud University, Riyadh, 11421 (Saudi Arabia); Razykov, T.; Sopian, K. [Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Amin, N., E-mail: nowshad@eng.ukm.my [Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Department of Electrical, Electronic and Systems Engineering, Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Center of Excellence for Research in Engineering Materials (CEREM) College of Engineering, King Saud University, Riyadh, 11421 (Saudi Arabia)

    2013-11-01

    The structural and electrical properties of the magnetron sputtered CdTe thin films with subsequent CdCl{sub 2} solution treatment have been studied with a major focus on the influence of CdCl{sub 2} treatment to achieve high quality thin films. In this study, CdTe films with a thickness of 1.5 to 2 μm have been grown using the magnetron sputtering technique on top of glass substrate at an optimized substrate temperature of 250 °C. Aqueous CdCl{sub 2} concentration varied from 0.3 mol to 1.2 mol with the annealing temperature from 360 °C to 450 °C. The surface roughness of the films increases with the increase of solution concentration, while it fluctuates with the increase of annealing temperature. The density of nucleation centers and the strain increases for the films treated at 360 °C with 0.3 M to1.2 M while the grain growth of the films reduces. However, these strains are released at higher annealing temperatures, resulting in reduced dislocation densities, structural defects as well as increased crystalline property and grain size. The carrier concentration increases with the increase of treated CdCl{sub 2} concentration and subsequent annealing temperature. The highest carrier concentration of 1.05 × 10{sup 14}/cm{sup 3} was found for the CdTe thin films treated with 0.3 M CdCl{sub 2} solution followed by an annealing treatment at 420 °C for 20 min. - Highlights: • CdTe thin films are grown as absorption layers in CdTe solar cells by sputtering. • CdTe film quality in terms of structural and electronic properties is examined. • All growth parameters are optimized in the range of 1.5 to 2 μm CdTe films.

  11. Reassignment of oxygen-related defects in CdTe and CdSe

    Energy Technology Data Exchange (ETDEWEB)

    Bastin, Dirk

    2015-05-22

    This thesis reassigns the O{sub Te}-V{sub Cd} complex in CdTe and the O{sub Se}-V{sub Cd} complex in CdSe to a sulfur-dioxygen complex SO{sub 2}*, and the O{sub Cd} defect in CdSe to a V{sub Cd}H{sub 2} complex using Fourier transformed infrared absorption spectroscopy. The publications of the previous complexes were investigated by theoreticians who performed first-principle calculations of theses complexes. The theoreticians ruled out the assignments and proposed alternative defects, instead. The discrepancy between the experimentally obtained and theoretically proposed defects was the motivation of this work. Two local vibrational modes located at 1096.8 (ν{sub 1}) and 1108.3 cm{sup -1} (ν{sub 2}) previously assigned to an O{sub Te}-V{sub Cd} complex are detected in CdTe single crystals doped with CdSO{sub 4} powder. Five weaker additional absorption lines accompanying ν{sub 1} and ν{sub 2} could be detected. The relative intensities of the absorption lines match a sulfur-dioxygen complex SO{sub 2}* having two configurations labeled ν{sub 1} and ν{sub 2}. A binding energy difference of 0.5±0.1 meV between the two configurations and an energy barrier of 53±4 meV separating the two configurations are determined. Uniaxial stress applied to the crystal leads to a splitting of the absorption lines which corresponds to an orthorhombic and monoclinic symmetry for ν{sub 1} and ν{sub 2}, respectively. In virgin and oxygen-doped CdSe single crystals, three local vibrational modes located at 1094.1 (γ{sub 1}), 1107.5 (γ{sub 2}), and 1126.3 cm{sup -1} (γ{sub 3}) previously attributed to an O{sub Se}-V{sub Cd} complex could be observed. The signals are accompanied by five weaker additional absorption features in their vicinity. The additional absorption lines are identified as isotope satellites of a sulfur-dioxygen complex SO{sub 2}* having three configurations γ{sub 1}, γ{sub 2}, and γ{sub 3}. IR absorption measurements with uniaxial stress applied to the

  12. Studies and development of a readout ASIC for pixelated CdTe detectors for space applications

    International Nuclear Information System (INIS)

    Michalowska, A.

    2013-01-01

    The work presented in this thesis is part of a project where a new instrument is developed: a camera for hard X-rays imaging spectroscopy. It is dedicated to fundamental research for observations in astrophysics, at wavelengths which can only be observed using space-borne instruments. In this domain the spectroscopic accuracy as well as the imaging details are of high importance. This work has been realized at CEA/IRFU (Institut de Recherche sur les lois Fondamentales de l'Univers), which has a long-standing and successful experience in instruments for high energy physics and space physics instrumentation. The objective of this thesis is the design of the readout electronics for a pixelated CdTe detector, suitable for a stacked assembly. The principal parameters of this integrated circuit are a very low noise for reaching a good accuracy in X-ray energy measurement, very low power consumption, a critical parameter in space-borne applications, and a small dead area for the full system combining the detector and the readout electronics. In this work I have studied the limits of these three parameters in order to optimize the circuit. In terms of the spectral resolution, two categories of noise had to be distinguished to determine the final performance. The first is the Fano noise limit, related to detector interaction statistics, which cannot be eliminated. The second is the electronic noise, also unavoidable; however it can be minimized through optimization of the detection chain. Within the detector, establishing a small pixel pitch of 300 μm reduces the input capacitance and the dark current. This limits the effects of the electronic noise. Also in order to limit the input capacitance the future camera is designed as a stacked assembly of the detector with the readout ASIC. This allows to reach extremely good input parameters seen by the readout electronics: a capacitance in range of 0.3 pF-1 pF and a dark current below 5 pA. In the frame of this thesis I have

  13. Research and development of CdTe based thin film PV solar cells

    Science.gov (United States)

    Diso, Dahiru Garba

    The motivation behind this research is to bring cheap, low-cost and clean energy technologies to the society. Colossal use of fossil fuel has created noticeable pollution problems contributing to climate change and health hazards. Silicon based solar cells have dominated the market but it is cost is high due to the manufacturing process. Therefore, the way forward is to develop thin films solar cells using low-cost attractive materials, grown by cheaper, scalable and manufacturable techniques.The aim and objectives of this work is to develop low-cost, high efficiency solar cell using electrodeposition (ED) technique. The material layers include CdS and ZnTe as the window materials, while the absorber material is CdTe. Fabricating a suitable devices for solar energy conversion (i.e. glass/conducting glass/window material/absorber material/metal) structure. Traditional way of fabricating this structure is to grow window material (CdS) using chemical bath deposition (CBD) and absorber material (CdTe) using electrodeposition. However, CBD is a batch process and therefore creates large volumes of Cd-containing waste solutions each time adding high cost in manufacturing process. This research programme is therefore on development of an "All ED-solar cells" structure.Material studies were carried out using photoelectrochemical (PEC) studies, UV-Vis spectrophotometry, X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Furthermore, the electrical characterisation of fully fabricated devices was performed using current-voltage (I-V) and capacitance-voltage (C-V) measurements.This research programme has demonstrated that CdS and ZnTe window materials can be electrodeposited and used in thin film solar cell devices. The CdS electrolytic bath can be used for a period of 7 months without discarding it like in the CBD process which usually has life

  14. A low-cost non-toxic post-growth activation step for CdTe solar cells

    Science.gov (United States)

    Major, J. D.; Treharne, R. E.; Phillips, L. J.; Durose, K.

    2014-07-01

    Cadmium telluride, CdTe, is now firmly established as the basis for the market-leading thin-film solar-cell technology. With laboratory efficiencies approaching 20 per cent, the research and development targets for CdTe are to reduce the cost of power generation further to less than half a US dollar per watt (ref. 2) and to minimize the environmental impact. A central part of the manufacturing process involves doping the polycrystalline thin-film CdTe with CdCl2. This acts to form the photovoltaic junction at the CdTe/CdS interface and to passivate the grain boundaries, making it essential in achieving high device efficiencies. However, although such doping has been almost ubiquitous since the development of this processing route over 25 years ago, CdCl2 has two severe disadvantages; it is both expensive (about 30 cents per gram) and a water-soluble source of toxic cadmium ions, presenting a risk to both operators and the environment during manufacture. Here we demonstrate that solar cells prepared using MgCl2, which is non-toxic and costs less than a cent per gram, have efficiencies (around 13%) identical to those of a CdCl2-processed control group. They have similar hole densities in the active layer (9 × 1014 cm-3) and comparable impurity profiles for Cl and O, these elements being important p-type dopants for CdTe thin films. Contrary to expectation, CdCl2-processed and MgCl2-processed solar cells contain similar concentrations of Mg; this is because of Mg out-diffusion from the soda-lime glass substrates and is not disadvantageous to device performance. However, treatment with other low-cost chlorides such as NaCl, KCl and MnCl2 leads to the introduction of electrically active impurities that do compromise device performance. Our results demonstrate that CdCl2 may simply be replaced directly with MgCl2 in the existing fabrication process, thus both minimizing the environmental risk and reducing the cost of CdTe solar-cell production.

  15. High efficiency thin film CdTe and a-Si based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2000-01-04

    This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10

  16. Hard X-ray polarimetry with Caliste, a high performance CdTe based imaging spectrometer

    Science.gov (United States)

    Antier, S.; Ferrando, P.; Limousin, O.; Caroli, E.; Curado da Silva, R. M.; Blondel, C.; Chipaux, R.; Honkimaki, V.; Horeau, B.; Laurent, P.; Maia, J. M.; Meuris, A.; Del Sordo, S.; Stephen, J. B.

    2015-06-01

    Since the initial exploration of the X- and soft γ-ray sky in the 60's, high-energy celestial sources have been mainly characterized through imaging, spectroscopy and timing analysis. Despite tremendous progress in the field, the radiation mechanisms at work in sources such as neutrons stars, black holes, and Active Galactic Nuclei are still unclear. The polarization state of the radiation is an observational parameter which brings key additional information about the physical processes in these high energy sources, allowing the discrimination between competing models which may otherwise all be consistent with other types of measurement. This is why most of the projects for the next generation of space missions covering the few tens of keV to the MeV region require a polarization measurement capability. A key element enabling this capability, in this energy range, is a detector system allowing the identification and characterization of Compton interactions as they are the main process at play. The compact hard X-ray imaging spectrometer module, developed in CEA with the generic name of "Caliste" module, is such a detector. In this paper, we present experimental results for two types of Caliste-256 modules, one based on a CdTe crystal, the other one on a CdZnTe crystal, which have been exposed to linearly polarized beams at the European Synchrotron Radiation Facility (ESRF). These results, obtained at 200 and 300 keV, demonstrate the capability of these modules to detect Compton events and to give an accurate determination of the polarization parameters (polarization angle and fraction) of the incoming beam. For example, applying an optimized selection to our data set, equivalent to select 90° Compton scattered interactions in the detector plane, we find a modulation factor Q of 0.78 ± 0.06 in the 200-300 keV range. The polarization angle and fraction are derived with accuracies of approximately 1° and 5 % respectively for both CdZnTe and CdTe crystals. The

  17. A pixellated γ-camera based on CdTe detectors clinical interests and performances

    Science.gov (United States)

    Chambron, J.; Arntz, Y.; Eclancher, B.; Scheiber, Ch; Siffert, P.; Hage Hali, M.; Regal, R.; Kazandjian, A.; Prat, V.; Thomas, S.; Warren, S.; Matz, R.; Jahnke, A.; Karman, M.; Pszota, A.; Nemeth, L.

    2000-07-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cm×15 cm detection matrix of 2304 CdTe detector elements, 2.83 mm×2.83 mm×2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the γ-camera performances. But their use as γ detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed of 256 detectors shared in 16 modules. Each module consists in a thin ceramic plate holding a line of 16 detectors, in four groups of four for an easy replacement, and holding a special 16 channels integrated circuit designed by CLRC (UK). A detection and acquisition logic based on a DSP card and a PC has been programmed by Eurorad for spectral and counting acquisition modes. Collimators LEAP and LEHR from commercial design, mobile gantry and clinical software were provided by Siemens (Germany). The γ-camera head housing, its general mounting and the electric connections were performed by Phase Laboratory (CNRS, France). The compactness of the γ-camera head, thin detectors matrix, electronic readout and collimator, facilitates the detection of close γ sources with the advantage of a high spatial resolution. Such an equipment is intended to bedside explorations. There is a growing clinical requirement in nuclear cardiology to early assess the extent of an

  18. A pixellated {gamma}-camera based on CdTe detectors clinical interests and performances

    Energy Technology Data Exchange (ETDEWEB)

    Chambron, J. E-mail: chambron@alsace.u-strasbg.fr; Arntz, Y.; Eclancher, B.; Scheiber, Ch.; Siffert, P.; Hage Hali, M.; Regal, R.; Kazandjian, A.; Prat, V.; Thomas, S.; Warren, S.; Matz, R.; Jahnke, A.; Karman, M.; Pszota, A.; Nemeth, L

    2000-07-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cmx15 cm detection matrix of 2304 CdTe detector elements, 2.83 mmx2.83 mmx2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the {gamma}-camera performances. But their use as {gamma} detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed of 256 detectors shared in 16 modules. Each module consists in a thin ceramic plate holding a line of 16 detectors, in four groups of four for an easy replacement, and holding a special 16 channels integrated circuit designed by CLRC (UK). A detection and acquisition logic based on a DSP card and a PC has been programmed by Eurorad for spectral and counting acquisition modes. Collimators LEAP and LEHR from commercial design, mobile gantry and clinical software were provided by Siemens (Germany). The {gamma}-camera head housing, its general mounting and the electric connections were performed by Phase Laboratory (CNRS, France). The compactness of the {gamma}-camera head, thin detectors matrix, electronic readout and collimator, facilitates the detection of close {gamma} sources with the advantage of a high spatial resolution. Such an equipment is intended to bedside explorations. There is a growing clinical requirement in nuclear cardiology to early assess

  19. Current state-of-the-art industrial and research applications using room-temperature CdTe and CdZnTe solid state detectors

    International Nuclear Information System (INIS)

    Eisen, Y.

    1996-01-01

    Improvements of CdTe crystal quality and significant progress in the growth of large ingots of high resistivity CdZnTe material enable the fabrication of larger area detectors in single element form or monolithic arrays. These advances allow for the development of imaging devices of improved spatial resolution for industrial, research and medical applications. CdTe and CdZnTe detectors operate in single photon counting mode or in current mode (charge integrating mode). The paper presents advantages of CdTe and CdZnTe over common scintillator type detectors, but also presents the shortcomings of the former detectors with respect to charge collection which limit the yields of good spectrometers. The paper reviews industrial and research applications utilizing these detectors and in particular describes in detail two imaging systems for security screening and custom inspection. These systems are characterized by large dynamic range and good spatial resolution and are composed of large arrays of CdTe spectrometers and discriminator grade detectors. A wide energy range detector assembly, for astrophysical research of gamma ray bursts composed of CdTe, HgI 2 and CdZnTe spectrometers in two dimensional arrays is also presented. (orig.)

  20. Growth of wurtzite CdTe nanowires on fluorine-doped tin oxide glass substrates and room-temperature bandgap parameter determination

    Science.gov (United States)

    Choi, Seon Bin; Song, Man Suk; Kim, Yong

    2018-04-01

    The growth of CdTe nanowires, catalyzed by Sn, was achieved on fluorine-doped tin oxide glass by physical vapor transport. CdTe nanowires grew along the 〈0001〉 direction, with a very rare and phase-pure wurtzite structure, at 290 °C. CdTe nanowires grew under Te-limited conditions by forming SnTe nanostructures in the catalysts and the wurtzite structure was energetically favored. By polarization-dependent and power-dependent micro-photoluminescence measurements of individual nanowires, heavy and light hole-related transitions could be differentiated, and the fundamental bandgap of wurtzite CdTe at room temperature was determined to be 1.562 eV, which was 52 meV higher than that of zinc-blende CdTe. From the analysis of doublet photoluminescence spectra, the valence band splitting energy between heavy hole and light hole bands was estimated to be 43 meV.

  1. Removal of CdTe in acidic media by magnetic ion-exchange resin: A potential recycling methodology for cadmium telluride photovoltaic waste

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Teng, E-mail: zhangteng@mail.iee.ac.cn; Dong, Zebin; Qu, Fei; Ding, Fazhu; Peng, Xingyu; Wang, Hongyan; Gu, Hongwei

    2014-08-30

    Highlights: • Sulfonated magnetic microsphere was prepared as one strong acid cation-exchange resin. • Cd and Te can be removed directly from the highly acidic leaching solution of CdTe. • Good chemical stability, fast adsorbing rate and quick magnetic separation in strong acidic media. • A potential path for recycling CdTe photovoltaic waste. - Abstract: Sulfonated magnetic microspheres (PSt-DVB-SNa MPs) have been successfully prepared as adsorbents via an aqueous suspension polymerization of styrene-divinylbenzene and a sulfonation reaction successively. The resulting adsorbents were confirmed by means of Fourier transform infrared spectra (FT-IR), X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope equipped with an energy dispersive spectrometer (SEM-EDS) and vibrating sample magnetometer (VSM). The leaching process of CdTe was optimized, and the removal efficiency of Cd and Te from the leaching solution was investigated. The adsorbents could directly remove all cations of Cd and Te from a highly acidic leaching solution of CdTe. The adsorption process for Cd and Te reached equilibrium in a few minutes and this process highly depended on the dosage of adsorbents and the affinity of sulfonate groups with cations. Because of its good adsorption capacity in strong acidic media, high adsorbing rate, and efficient magnetic separation from the solution, PSt-DVB-SNa MPs is expected to be an ideal material for the recycling of CdTe photovoltaic waste.

  2. Electroplating of CdTe Thin Films from Cadmium Sulphate Precursor and Comparison of Layers Grown by 3-Electrode and 2-Electrode Systems

    Directory of Open Access Journals (Sweden)

    Imyhamy M. Dharmadasa

    2017-01-01

    Full Text Available Electrodeposition of CdTe thin films was carried out from the late 1970s using the cadmium sulphate precursor. The solar energy group at Sheffield Hallam University has carried out a comprehensive study of CdTe thin films electroplated using cadmium sulfate, cadmium nitrate and cadmium chloride precursors, in order to select the best electrolyte. Some of these results have been published elsewhere, and this manuscript presents the summary of the results obtained on CdTe layers grown from cadmium sulphate precursor. In addition, this research program has been exploring the ways of eliminating the reference electrode, since this is a possible source of detrimental impurities, such as K+ and Ag+ for CdS/CdTe solar cells. This paper compares the results obtained from CdTe layers grown by three-electrode (3E and two-electrode (2E systems for their material properties and performance in CdS/CdTe devices. Thin films were characterized using a wide range of analytical techniques for their structural, morphological, optical and electrical properties. These layers have also been used in device structures; glass/FTO/CdS/CdTe/Au and CdTe from both methods have produced solar cells to date with efficiencies in the region of 5%–13%. Comprehensive work carried out to date produced comparable and superior devices fabricated from materials grown using 2E system.

  3. The ISGRI CdTe gamma-ray camera: first steps

    CERN Document Server

    Limousin, O; Cretolle, J; Dzitko, H; Laurent, P; Lebrun, F; Leray, J P; Arques, M; Baffert, N; Mathy, F; Noca, A; Trystram, P; Villard, P; Baron, P; Delagnes, E; Rouger, M

    2000-01-01

    The gamma-ray telescope IBIS, on board the INTEGRAL satellite, features a coded-mask aperture, active and passive shields and two detector arrays. The first one (ISGRI) is an assembly of 16384 CdTe detectors (4x4 mm large, 2 mm thick) operating at room temperature. ISGRI covers the lower part (15 keV-1 MeV) of the IBIS energy range (15 keV-10 MeV). Detectors are arranged on polycells, each including 16 crystals, connected to their front-end electronics (ASICs). Each of the eight independent ISGRI modules are made of 128 polycells. The ASICs contain a low noise charge-sensitive preamplifier and feature pulse rise-time measurement in addition to the standard pulse height measurement. This permits to compute a charge loss correction based on the charge drift time. After application of this correction, a spectral resolution around 7.5% at 122 keV is obtained with the ASICs. Today, 16 polycells have been mounted on the first representative ISGRI module. This module has been interfaced with the entire ISGRI data-pr...

  4. [Feasibility study of CdTe Semiconductor detector for gamma camera--evaluation of planar images].

    Science.gov (United States)

    Takayama, T; Nakamura, N; Motomura, N; Mori, I; Ozaki, T; Ohno, R

    2000-05-01

    To evaluate the performance of a semiconductor detector for use in a gammacamera system, we assembled a detector with a small field of view--1 inch x 1 inch and 1 inch x 2 inch--made from CdTe (Cadmium telluride). We then compared the planar images and energy resolution of the resulting detectors against those of a conventional gammacamera. Pixel pitch of the detector was 1.6 mm x 1.6 mm, and was manufactured by Acrorad Corporation. Average FWHM of the energy spectrum for the semiconductor detector was 5.11% (SD: 0.80%, Best: 3.26%, Worst: 6.68%). The planar images obtained were of a letter phantom made from pieces of lead and of an IMP brain phantom. Since the field of view of the semiconductor detector was small, the image of the IMP brain phantom was acquired by moving the semiconductor over the collimated detector module until the area of the entire phantom was covered. The images from the semiconductor assembly were compared with those from a conventional gammacamera using the same conditions, and it was found that visual image quality was superior to those of the conventional camera system.

  5. Automatic Control System for the High Pressure CdTe Crystal Growth Furnace

    Directory of Open Access Journals (Sweden)

    Petr Praus

    2006-08-01

    Full Text Available CdTe and (CdZnTe bulk single crystals have been widely used as substrates for MBE and LPE epitaxy of infrared (HgCdTe as well as gamma- and X-ray detectors. The Cd1-xZnxTe (x = 0.04-0.1 single crystals with diameter up to 100 mm and height at most 40 mm were prepared in our laboratory in a vertical arrangement by gradual cooling of the melt (the Vertical Gradient Freezing method. Achievement of excellent crystal quality required full control of Cd pressure during the growth process and application of high Cd pressures (up to 4 bar at growth temperature. An electronic control system was designed to control both temperature and internal pressure of two zones CZT crystal growth furnace by using two high performance PID controllers/setpoint programmers. Two wire current loop serial communication bus was used for the data exchange and computer control of the furnace electronics setup. Control software was written to supervise the crystal growth process and to collect all important data and parameters.

  6. Theoretical and experimental study of α-Sn deposited on CdTe(001)

    International Nuclear Information System (INIS)

    Gomez, J.A.; Guenzburger, D.; Ellis, D.E.; Hu, M.Y.; Baggio-Saitovitc, E.M.; Passamani, E.C.; Alp, E.E.

    2003-01-01

    Gray tin films enriched by over 95% 119 Sn and grown by molecular beam epitaxy on CdTe(001) wafers are characterized by inelastic nuclear resonance spectroscopy and investigated theoretically by embedded-cluster density-functional theory methods. Experimental tin phonon densities of states are obtained via analysis of resonant scattering of the 23.88-keV nuclear transition, making use of a high-resolution spectrometer at the Advanced Photon Source. Conventional Moessbauer spectroscopy is used in the scattering mode to determine hyperfine parameters of the α-Sn phase and, after thermal treatment, the β phase. Electronic structure in the vicinity of Sn-Cd and Sn-Te interfaces is calculated in order to determine local charge transfer and changes in hyperfine parameters for 119 Sn atoms in the interface region. Although, due to sample thickness, both experiments reveal properties essentially of the bulk, the calculations allow investigation of surface and interface regions at an atomic level, thus providing complementary information. Effects of interlayer relaxation are explored.

  7. Synthesis and characterization of electrochemically deposited nanocrystalline CdTe thin films

    International Nuclear Information System (INIS)

    Singh, Ragini Raj; Painuly, Diksha; Pandey, R.K.

    2009-01-01

    Electrodeposition is emerging as a method for the synthesis of semiconductor thin films and nanostructures. In this work we prepared the nanocrystalline CdTe thin films on indium tin oxide coated glass substrate from aqueous acidic bath at the deposition temperature 50 ± 1 deg. C. The films were grown potentiostatically from -0.60 V to -0.82 V with respect to saturated calomel reference electrode. The structural, compositional, morphological and optical properties were investigated using X-ray diffraction (XRD), energy dispersive analysis by X-rays (EDAX), atomic force microscopy (AFM), and UV-vis spectroscopy respectively and cyclic voltammetery. The structural and optical studies revealed that films are nanocrystalline in nature and possess cubic phase, also the films are preferentially oriented along the cubic (1 1 1) plane. The effect of cadmium composition on the deposited morphology was also investigated. The size dependent blue shift in the experimentally determined absorption edge has been compared with the theoretical predictions based on the effective mass approximation and tight binding approximation. It is shown that the experimentally determined absorption edges depart from the theoretically calculated values.

  8. Physical properties of spray deposited CdTe thin films: PEC performance

    International Nuclear Information System (INIS)

    Nikale, V. M.; Shinde, S. S.; Bhosale, C. H.; Rajpure, K.Y.

    2011-01-01

    p-CdTe thin films were prepared by spray pyrolysis under different ambient conditions and characterized using photoelectrochemical (PEC), X-ray diffraction (XRD), scanning electron microscopy, energy-dispersive analysis by X-ray (EDAX), and optical transmission studies. The different preparative parameters viz solution pH, solution quantity, substrate temperature and solution concentration have been optimized by the PEC technique in order to get good-quality photosensitive material. XRD analysis shows the polycrystalline nature of the film, having cubic structure with strong (111) orientation. Micrographs reveal that grains are uniformly distributed over the surface of the substrate indicating the well-defined growth of polycrystalline CdTe thin film. The EDAX study for the sample deposited at optimized preparative parameters shows the nearly stoichiometric Cd : Te ratio. Optical absorption shows the presence of direct transition with band gap energy of 1.5 eV Deposited films exhibit the highest photocurrent of 2.3 mA, a photovoltage of 462 mV, a 0.48 fill factor and 3.4% efficiency for the optimized preparative parameters. (semiconductor materials)

  9. Comparative Health Risk Assessment of CdTe Solar PV System and Nuclear Power Plant

    International Nuclear Information System (INIS)

    Lee, Sang Hun; Kang, Hyun Gook

    2014-01-01

    In terms of national energy policy decision-making process, several key factors, including low production cost, negligible risk or impact to environment and population around the facility, must be considered. The purpose of this paper is to assess the public health risk in case of postulated nuclear power plant and CdTe solar PV system accident and compare the estimated public health risk. Both systems release toxic materials to the environment which adversely affect nearby population by exposure from the inhalation and ingestion of the toxic material transported via air. By simulating the airborne transport of released toxic material using Gaussian plume model and modeling exposure pathways to nearby population, average individual health risk is assessed and public health risk per power capacity of each system is compared. The result shows that the average public health risk per power capacity of NPP is less than the case of solar PV system. This implies that NPP has lower risk in terms of public health risk in case of severe accident while it can be used as more reliable energy source than renewable energy source so that NPP would take priority over other renewable energy sources in terms of national energy policy

  10. High-efficiency, flexible CdTe solar cells on ultra-thin glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Mahabaduge, H. P.; Rance, W. L.; Burst, J. M.; Reese, M. O.; Gessert, T. A.; Metzger, W. K.; Barnes, T. M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Meysing, D. M.; Wolden, C. A.; Li, J.; Beach, J. D. [Colorado School of Mines, Golden, Colorado 80401 (United States); Garner, S. [Corning, Inc., Corning, New York 14831 (United States)

    2015-03-30

    Flexible, high-efficiency, low-cost solar cells can enable applications that take advantage of high specific power, flexible form factors, lower installation and transportation costs. Here, we report a certified record efficiency of 16.4% for a flexible CdTe solar cell that is a marked improvement over the previous standard (14.05%). The improvement was achieved by replacing chemical-bath-deposited CdS with sputtered CdS:O and also replacing the high-temperature sputtered ZnTe:Cu back contact layer with co-evaporated and rapidly annealed ZnTe:Cu. We use quantum efficiency and capacitance-voltage measurements combined with device simulations to identify the reasons for the increase in efficiency. Both device simulations and experimental results show that higher carrier density can quantitatively account for the increased open circuit voltage (V{sub OC}) and Fill Factor (FF), and likewise, the increase in short circuit current density (J{sub SC}) can be attributed to the more transparent CdS:O.

  11. Development of Coring Procedures Applied to Si, CdTe, and CIGS Solar Panels

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, Helio R [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Johnston, Steven [National Renewable Energy Laboratory (NREL), Golden, CO (United States); To, Bobby [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Jiang, Chun Sheng [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Xiao, Chuanxiao [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Hacke, Peter L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Moseley, John [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Tynan, Gerald D [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Al-Jassim, Mowafak M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Dhere, N. G. [Florida Solar Energy Center

    2018-01-04

    Most of the research on the performance and degradation of photovoltaic modules is based on macroscale measurements of device parameters such as efficiency, fill factor, open-circuit voltage, and short-circuit current. Our goal is to develop the capabilities to allow us to study the degradation of these parameters in the micro- and nanometer scale and to relate our results to performance parameters. To achieve this objective, the first step is to be able to access small samples from specific areas of the solar panels without changing the properties of the material. In this paper, we describe two coring procedures that we developed and applied to Si, CIGS, and CdTe solar panels. In the first procedure, we cored full samples, whereas in the second we performed a partial coring that keeps the tempered glass intact. The cored samples were analyzed by different analytical techniques before and after coring, at the same locations, and no damage during the coring procedure was observed.

  12. Structure and dynamics of CdTe studied by X-ray and neutron scattering

    Science.gov (United States)

    Stone, Matthew; Niedziela, Jennifer

    2015-03-01

    We present x-ray diffraction and inelastic neutron scattering studies of the structure and lattice dynamics of commercially available cadmium telluride. We also present complementary density functional theory calculations. The x-ray data show a subtle structural transition is present near 80 K, which manifests also in the measured phonon density of states. Refinement of the structure above and below the transition temperature shows no change to the long-range ordered structure. The inelastic neutron scattering studies were performed using an isotopically un-enriched sample of CdTe, which possesses a high cross section for thermal neutron absorption. The neutron portion of the study was performed with a thin-plate geometry in the reflection condition at the ARCS instrument at the SNS, showing the high flux of the instrument makes possible lattice dynamics studies of materials with high thermal neutron absorption. Single crystal and powder inelastic neutron scattering measurements will be presented. Current interpretation of the nature of the transition and future studies will be discussed. This research at ORNL's Spallation Neutron Source was sponsored by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy.

  13. Tuning optical properties of water-soluble CdTe quantum dots for biological applications

    Energy Technology Data Exchange (ETDEWEB)

    Schulze, Anne S.; Tavernaro, Isabella; Machka, Friederike [Justus-Liebig-University Giessen, Institute of Inorganic and Analytical Chemistry (Germany); Dakischew, Olga; Lips, Katrin S. [Justus-Liebig-University Giessen, Laboratory of Experimental Trauma Surgery (Germany); Wickleder, Mathias S., E-mail: mathias.wickleder@anorg.chemie.uni-giessen.de [Justus-Liebig-University Giessen, Institute of Inorganic and Analytical Chemistry (Germany)

    2017-02-15

    In this study, two different synthetic methods in aqueous solution are presented to tune the optical properties of CdTe and CdSe semiconductor nanoparticles. Additionally, the influence of different temperatures, pressures, precursor ratios, surface ligands, bases, and core components in the synthesis was investigated with regard to the particle sizes and optical properties. As a result, a red shift of the emission and absorption maxima with increasing reaction temperature (100 to 220°C), pressure (1 to 25 bar), and different ratios of core components of alloyed semiconductor nanoparticles could be observed without a change of the particle size. An increase in particle size from 2.5 to 5 nm was only achieved by variation of the mercaptocarboxylic acid ligands in combination with the reaction time and used base. To get a first hint on the cytotoxic effects and cell uptake of the synthesized quantum dots, in vitro tests mesenchymal stem cells (MSCs) were carried out.

  14. Evaluation of Biological Toxicity of CdTe Quantum Dots with Different Coating Reagents according to Protein Expression of Engineering Escherichia coli

    Directory of Open Access Journals (Sweden)

    Wei Xu

    2015-01-01

    Full Text Available The results obtained from toxicity assessment of quantum dots (QDs can be used to establish guidelines for the application of QDs in bioimaging. This paper focused on the design of a novel method to evaluate the toxicity of CdTe QDs using engineering Escherichia coli as a model. The toxicity of mercaptoacetic acid (MPA, glutathione (GSH, and L-cysteine (Cys capped CdTe QDs was analyzed according to the heterologous protein expression in BL21/DE3, engineering Escherichia coli extensively used for protein expression. The results showed that the MPA-CdTe QDs had more serious toxicity than the other two kinds of CdTe QDs. The microscopic images and SEM micrographs further proved that both the proliferation and the protein expression of engineering Escherichia coli were inhibited after treatment with MPA-CdTe QDs. The proposed method is important to evaluate biological toxicity of both QDs and other nanoparticles.

  15. Atomic-resolution characterization of the effects of CdCl2 treatment on poly-crystalline CdTe thin films

    Science.gov (United States)

    Paulauskas, T.; Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Chan, M. K. Y.; Klie, R. F.

    2014-08-01

    Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl2 environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl2, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

  16. Ultrasensitive fluorescence immunoassay for detection of ochratoxin A using catalase-mediated fluorescence quenching of CdTe QDs

    Science.gov (United States)

    Huang, Xiaolin; Zhan, Shengnan; Xu, Hengyi; Meng, Xianwei; Xiong, Yonghua; Chen, Xiaoyuan

    2016-04-01

    Herein, for the first time we report an improved competitive fluorescent enzyme linked immunosorbent assay (ELISA) for the ultrasensitive detection of ochratoxin A (OTA) by using hydrogen peroxide (H2O2)-induced fluorescence quenching of mercaptopropionic acid-modified CdTe quantum dots (QDs). In this immunoassay, catalase (CAT) was labeled with OTA as a competitive antigen to connect the fluorescence signals of the QDs with the concentration of the target. Through the combinatorial use of H2O2-induced fluorescence quenching of CdTe QDs as a fluorescence signal output and the ultrahigh catalytic activity of CAT to H2O2, our proposed method could be used to perform a dynamic linear detection of OTA ranging from 0.05 pg mL-1 to 10 pg mL-1. The half maximal inhibitory concentration was 0.53 pg mL-1 and the limit of detection was 0.05 pg mL-1. These values were approximately 283- and 300-folds lower than those of horseradish peroxidase (HRP)-based conventional ELISA, respectively. The reported method is accurate, highly reproducible, and specific against other mycotoxins in agricultural products as well. In summary, the developed fluorescence immunoassay based on H2O2-induced fluorescence quenching of CdTe QDs can be used for the rapid and highly sensitive detection of mycotoxins or haptens in food safety monitoring.Herein, for the first time we report an improved competitive fluorescent enzyme linked immunosorbent assay (ELISA) for the ultrasensitive detection of ochratoxin A (OTA) by using hydrogen peroxide (H2O2)-induced fluorescence quenching of mercaptopropionic acid-modified CdTe quantum dots (QDs). In this immunoassay, catalase (CAT) was labeled with OTA as a competitive antigen to connect the fluorescence signals of the QDs with the concentration of the target. Through the combinatorial use of H2O2-induced fluorescence quenching of CdTe QDs as a fluorescence signal output and the ultrahigh catalytic activity of CAT to H2O2, our proposed method could be used to

  17. Preparation and photoluminescence characterization of high-purity CdTe single crystals: purification effect of normal freezing on tellurium and cadmium telluride

    Science.gov (United States)

    Song, S. H.; Wang, J.; Isshiki, M.

    2002-03-01

    Extremely high-purity CdTe single crystals have been obtained by the traditional vertical Bridgman technique, beginning with the refining of tellurium material by the normal freezing method. The purification effect of normal freezing on tellurium has been confirmed to be very effective. This effect was also used to prepare extremely high-purity CdTe single crystals. The crystals were characterized by low temperature high-resolution photoluminescence (PL) spectroscopy. Only a sharp peak at 1.5896 eV was detected in the PL spectrum. The full-width at half-maximum is prepared by the Bridgman method.

  18. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    OpenAIRE

    Del Sordo, S.; Abbene, L.; Caroli, E.; Mancini, A.; Zappettini, A.; Ubertini, P.

    2009-01-01

    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status...

  19. Pixel CdTe semiconductor module to implement a sub-MeV imaging detector for astrophysics

    Science.gov (United States)

    Gálvez, J.-L.; Hernanz, M.; Álvarez, L.; Artigues, B.; Álvarez, J.-M.; Ullán, M.; Pellegrini, G.; Lozano, M.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.

    2017-03-01

    Stellar explosions are relevant and interesting astrophysical phenomena. Since long ago we have been working on the characterization of nova and supernova explosions in X and gamma rays, with the use of space missions such as INTEGRAL, XMM-Newton and Swift. We have been also involved in feasibility studies of future instruments in the energy range from several keV up to a few MeV, in collaboration with other research institutes, such as GRI, DUAL and e-ASTROGAM. High sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators, e.g., Supernovae, Classical Novae, Supernova Remnants (SNRs), Gamma-Ray Bursts (GRBs). In order to fulfil the combined requirement of high detection efficiency with good spatial and energy resolution, an initial module prototype based on CdTe pixel detectors is being developed. The detector dimensions are 12.5mm x 12.5mm x 2mm, with a pixel pitch of 1mm x 1mm. Each pixel is bump bonded to a fanout board made of Sapphire substrate and routed to the corresponding input channel of the readout ASIC, to measure pixel position and pulse height for each incident gamma-ray photon. An ohmic CdTe pixel detector has been characterised by means of 57Co, 133Ba and 22Na sources. Based on this, its spectroscopic performance and the influence of charge sharing is reported here. The pixel study is complemented by the simulation of the CdTe module performance using the GEANT 4 and MEGALIB tools, which will help us to optimise the pixel size selection.

  20. Evaluation of Polarization Effects of e- Collection Schottky CdTe Medipix3RX Hybrid Pixel Detector

    Science.gov (United States)

    Astromskas, Vytautas; Gimenez, Eva N.; Lohstroh, Annika; Tartoni, Nicola

    2016-02-01

    This paper focuses on the evaluation of operational conditions such as temperature, exposure time and flux on the polarization of a Schottky electron collection CdTe detector. A Schottky e- collection CdTe Medipix3RX hybrid pixel detector was developed as a part of the CALIPSO-HIZPAD2 EU project. The 128 ×128 pixel matrix and 0.75 mm thick CdTe sensor bump-bonded to Medipix3RX readout chips enabled the study of the polarization effects. Single and quad module Medipix3RX chips were used which had 128 ×128 and 256 ×256 pixel matrices, respectively. This study reports the sensor-level and pixel-level polarization effects of the detector obtained from a laboratory X-ray source. We report that the sensor-level polarization is highly dependent on temperature, flux and exposure time. Furthermore, the study of pixel-level polarization effects led to identification of a new type of pixel behaviour that is characterised by three distinct phases and, thus, named “tri-phase” (3-P) pixels. The 3-P pixels were the dominant cause of degradation of the flat-field image uniformity under high flux operation. A new method of identifying the optimum operational conditions that utilises a criterion related to the 3-P pixels is proposed. A generated optimum operational conditions chart under the new method is reported. The criterion is used for bias voltage reset depolarization of the detector. The method successfully represented the dependency of polarization on temperature, flux and exposure time and was reproducible for multiple sensors. Operating the detector under the 3-P pixel criterion resulted in the total efficiency not falling below 95%.

  1. Spectroscopic Imaging Using Ge and CdTe Based Detector Systems for Hard X-ray Applications

    Science.gov (United States)

    Astromskas, Vytautas

    Third generation synchrotron facilities such as the Diamond Light Source (DLS) have a wide range of experiments performed for a wide range of science fields. The DLS operates at energies up to 150 keV which introduces great challenges to radiation detector technology. This work focuses on the requirements that the detector technology faces for X-ray Absorption Fine Structure (XAFS) and powder diffraction experiments in I12 and I15 beam lines, respectively. A segmented HPGe demonstrator detector with in-built charge sensitive CUBE preamplifiers and a Schottky e- collection CdTe Medipix3RX detector systems were investigated to understand the underlying mechanisms that limit spectroscopic, imaging performances and stability and to find ways to overcome or minimise those limitations. The energy resolution and stability of the Ge demonstrator detector was found to have the required characteristics for XAFS measurements. Charge sharing was identified as a limiting factor to the resolution which is going to be addressed in the future development of a full detector system as well as reductions in electronic noise and cross-talk effects. The stability study of the Schottky CdTe Medipix3RX detector showed that polarization is highly dependent on temperature, irradiation duration and incoming flux. A new pixel behaviour called tri-phase (3-P) pixel was identified and a novel method for determining optimum operational conditions was developed. The use of the 3-P pixels as a criterion for depolarization resulted in a stable performance of the detector. Furthermore, the detector was applied in powder diffraction measurement at the I15 beam line and resulted in the detector diffraction pattern matching the simulated data. CdTe Medipix3RX and HEXITEC spectroscopic imaging detectors were applied in identification and discrimination of transitional metals for security application and K-edge subtraction for medical applications. The results showed that both detectors have potential

  2. Charge collection efficiency and space charge formation in CdTe gamma and X-ray detectors

    International Nuclear Information System (INIS)

    Matz, R.; Weidner, M.

    1998-01-01

    A new extended model for the charge collection efficiency in CdTe gamma and X ray detectors is presented which allows to derive from apparent experimental gamma spectra of a quasi-monochromatic source, an 241 Am source in the present case, not only the μτ products of electrons and holes individually but also the sign, spatial distribution, and temporal evolution of the net space charge accumulated in the detector. Resistive CdTe and CdZnTe as well as CdTe Schottky detectors are studied. While the resistive type is stable in time and exhibits higher μτ products, the Schottky type shows space charge accumulation which approaches saturation after about 1 h at several 10 11 cm -3 . This is attributed to efficient majority carrier depletion, Fermi level shift, and trap filling. Resistive detectors thus appear optimized to the needs of gamma spectroscopy even at low bias voltage, while Schottky types need higher bias to overcome the space charge. They are suited to both, gamma spectroscopy and X-ray detection in analog current mode, where they operate more stably due to the higher bias. From the point of view of materials characterization, gamma spectroscopy with Schottky detectors probes and reveals the trap density near the Fermi level (several 10 12 cm -3 eV -1 ). We find a basically homogeneous spatial distribution suggesting the trap origin being in crystal growth rather than surface processing. Capture of photogenerated charges in traps is detrimental for current-mode operation under high X-ray flux because delayed emission from traps limits the detector''s ability to respond to fast signal changes. (orig.)

  3. Evolution of oxygenated cadmium sulfide (CdS:O) during high-temperature CdTe solar cell fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Meysing, Daniel M.; Reese, Matthew O.; Warren, Charles W.; Abbas, Ali; Burst, James M.; Mahabaduge, Hasitha P.; Metzger, Wyatt K.; Walls, John M.; Lonergan, Mark C.; Barnes, Teresa M.; Wolden, Colin A.

    2016-12-01

    Oxygenated cadmium sulfide (CdS:O) produced by reactive sputtering has emerged as a promising alternative to conventional CdS for use as the n-type window layer in CdTe solar cells. Here, complementary techniques are used to expose the window layer (CdS or CdS:O) in completed superstrate devices and combined with a suite of materials characterization to elucidate its evolution during high temperature device processing. During device fabrication amorphous CdS:O undergoes significant interdiffusion with CdTe and recrystallization, forming CdS1-yTey nanocrystals whose Te fraction approaches solubility limits. Significant oxygen remains after processing, concentrated in sulfate clusters dispersed among the CdS1-yTey alloy phase, accounting for ~30% of the post-processed window layer based on cross-sectional microscopy. Interdiffusion and recrystallization are observed in devices with un-oxygenated CdS, but to a much lesser extent. Etching experiments suggest that the CdS thickness is minimally changed during processing, but the CdS:O window layer is reduced from 100 nm to 60-80 nm, which is confirmed by microscopy. Alloying reduces the band gap of the CdS:O window layer to 2.15 eV, but reductions in thickness and areal density improve its transmission spectrum, which is well matched to device quantum efficiency. The changes to the window layer in the reactive environments of device fabrication are profoundly different than what occurs by thermal annealing in an inert environment, which produced films with a band gap of 2.4 eV for both CdS and CdS:O. These results illustrate for the first time the significant changes that occur to the window layer during processing that are critical to the performance of CdTe solar cells.

  4. Cross talk experiment with two-element CdTe detector and collimator for BNCT-SPECT

    Energy Technology Data Exchange (ETDEWEB)

    Manabe, Masanobu; Ohya, Ryosuke; Saraue, Nobuhide; Sato, Fuminobu; Murata, Isao [Osaka University, Osaka (Japan)

    2016-12-15

    Boron Neutron Capture Therapy (BNCT) is a new radiation therapy. In BNCT, there exists some very critical problems that should be solved. One of the severest problems is that the treatment effect cannot be known during BNCT in real time. We are now developing a SPECT (single photon emission computed tomography) system (BNCT-SPECT), with a cadmium telluride (CdTe) semiconductor detector. BNCT-SPECT can obtain the BNCT treatment effect by measuring 478 keV gamma-rays emitted from the excited state of 7Li nucleus created by 10B(n,α) 7Li reaction. In the previous studies, we investigated the feasibility of the BNCT-SPECT system. As a result, the S/N ratio did not meet the criterion of S/N >1 because deterioration of the S/N ratio occurred caused by the influence of Compton scattering especially due to capture gamma-rays of hydrogen. We thus produced an arrayed detector with two CdTe crystals to test cross talk phenomenon and to examine an anti-coincidence detection possibility. For more precise analysis for the anti-coincidence detection, we designed and made a collimator having a similar performance to the real BNCT-SPECT. We carried out experiments with the collimator to examine the effect of cross talk of scattering gamma-rays between CdTe elements more practically. As a result of measurement the coincidence events were successfully extracted. We are now planning to carry out evaluation of coincidence rate from the measurement and comparison of it with the numerical calculations.

  5. A 10 cm × 10 cm CdTe Spectroscopic Imaging Detector based on the HEXITEC ASIC

    Science.gov (United States)

    Wilson, M. D.; Dummott, L.; Duarte, D. D.; Green, F. H.; Pani, S.; Schneider, A.; Scuffham, J. W.; Seller, P.; Veale, M. C.

    2015-10-01

    The 250 μ m pitch 80x80 pixel HEXITEC detector systems have shown that spectroscopic imaging with an energy resolution of CdTe biased to -500 V. This level of spectroscopic imaging has a variety of applications but the ability to produce large area detectors remains a barrier to the adoption of this technology. The limited size of ASICs and defect free CdTe wafers dictates that building large area monolithic detectors is not presently a viable option. A 3-side buttable detector module has been developed to cover large areas with arrays of smaller detectors. The detector modules are 20.35 × 20.45 mm with CdTe bump bonded to the HEXITEC ASIC with coverage up to the edge of the module on three sides. The fourth side has a space of 3 mm to allow I/O wire bonds to be made between the ASIC and the edge of a PCB that routes the signals to a connector underneath the active area of the module. The detector modules have been assembled in rows of five modules with a dead space of 170 μ m between each module. Five rows of modules have been assembled in a staggered height array where the wire bonds of one row of modules are covered by the active detector area of a neighboring row. A data acquisition system has been developed to digitise, store and output the 24 Gbit/s data that is generated by the array. The maximum bias magnitude that could be applied to the CdTe detectors from the common voltage source was limited by the worst performing detector module. In this array of detectors a bias of -400 V was used and the detector modules had 93 % of pixels with better than 1.2 keV FWHM at 59.5 keV. An example of K-edge enhanced imaging for mammography was demonstrated. Subtracting images from the events directly above and below the K-edge of the Iodine contrast agent was able to extract the Iodine information from the image of a breast phantom and improve the contrast of the images. This is just one example where the energy spectrum per pixel can be used to develop new and

  6. Solar-energy conversion by combined photovoltaic converters with CdTe and CuInSe2 base layers

    International Nuclear Information System (INIS)

    Khrypunov, G. S.; Sokol, E. I.; Yakimenko, Yu. I.; Meriuts, A. V.; Ivashuk, A. V.; Shelest, T. N.

    2014-01-01

    The possibility of the combined use of bifacial thin-film solar cells based on CdTe and frontal solar cells with a CuInSe 2 base layer in tandem structures is experimentally confirmed. It is found that, for the use of bifacial solar cells based on cadmium telluride in a tandem structure, the optimal thickness of their base layer should be 1 μm. The gain in the efficiency of the tandem structure, compared with an individual CuInSe 2 -based solar cell, is 1.8% in the case of series-connected solar cells and 1.3%, for parallel-connected

  7. Biocompatibility of hydrophilic silica-coated CdTe quantum dots and magnetic nanoparticles

    Directory of Open Access Journals (Sweden)

    Ruan Jing

    2011-01-01

    Full Text Available Abstract Fluorescent magnetic nanoparticles exhibit great application prospects in biomedical engineering. Herein, we reported the effects of hydrophilic silica-coated CdTe quantum dots and magnetic nanoparticles (FMNPs on human embryonic kidney 293 (HEK293 cells and mice with the aim of investigating their biocompatibility. FMNPs with 150 nm in diameter were prepared, and characterized by high-resolution transmission electron microscopy and photoluminescence (PL spectra and magnetometer. HEK293 cells were cultured with different doses of FMNPs (20, 50, and 100μ g/ml for 1-4 days. Cell viability and adhesion ability were analyzed by CCK8 method and Western blotting. 30 mice were randomly divided into three groups, and were, respectively, injected via tail vein with 20, 60, and 100 μg FMNPs, and then were, respectively, raised for 1, 7, and 30 days, then their lifespan, important organs, and blood biochemical parameters were analyzed. Results show that the prepared water-soluble FMNPs had high fluorescent and magnetic properties, less than 50 μg/ml of FMNPs exhibited good biocompatibility to HEK293 cells, the cell viability, and adhesion ability were similar to the control HEK293 cells. FMNPs primarily accumulated in those organs such as lung, liver, and spleen. Lung exposed to FMNPs displayed a dose-dependent inflammatory response, blood biochemical parameters such as white blood cell count (WBC, alanine aminotransferase (ALT, and aspartate aminotransferase (AST, displayed significant increase when the FMNPs were injected into mice at dose of 100μg. In conclusion, FMNPs exhibit good biocompatibility to cells under the dose of less than 50 μg/ml, and to mice under the dose of less than 2mg/kg body weight. The FMNPs' biocompatibility must be considered when FMNPs are used for in vivo diagnosis and therapy.

  8. CdTe Focal Plane Detector for Hard X-Ray Focusing Optics

    Science.gov (United States)

    Seller, Paul; Wilson, Matthew D.; Veale, Matthew C.; Schneider, Andreas; Gaskin, Jessica; Wilson-Hodge, Colleen; Christe, Steven; Shih, Albert Y.; Inglis, Andrew; Panessa, Marco

    2015-01-01

    The demand for higher resolution x-ray optics (a few arcseconds or better) in the areas of astrophysics and solar science has, in turn, driven the development of complementary detectors. These detectors should have fine pixels, necessary to appropriately oversample the optics at a given focal length, and an energy response also matched to that of the optics. Rutherford Appleton Laboratory have developed a 3-side buttable, 20 millimeter x 20 millimeter CdTe-based detector with 250 micrometer square pixels (80 x 80 pixels) which achieves 1 kiloelectronvolt FWHM (Full-Width Half-Maximum) @ 60 kiloelectronvolts and gives full spectroscopy between 5 kiloelectronvolts and 200 kiloelectronvolts. An added advantage of these detectors is that they have a full-frame readout rate of 10 kilohertz. Working with NASA Goddard Space Flight Center and Marshall Space Flight Center, 4 of these 1 millimeter-thick CdTe detectors are tiled into a 2 x 2 array for use at the focal plane of a balloon-borne hard-x-ray telescope, and a similar configuration could be suitable for astrophysics and solar space-based missions. This effort encompasses the fabrication and testing of flight-suitable front-end electronics and calibration of the assembled detector arrays. We explain the operation of the pixelated ASIC readout and measurements, front-end electronics development, preliminary X-ray imaging and spectral performance, and plans for full calibration of the detector assemblies. Work done in conjunction with the NASA Centers is funded through the NASA Science Mission Directorate Astrophysics Research and Analysis Program.

  9. Characterization of a module with pixelated CdTe detectors for possible PET, PEM and compton camera applications

    Science.gov (United States)

    Ariño-Estrada, G.; Chmeissani, M.; de Lorenzo, G.; Puigdengoles, C.; Martínez, R.; Cabruja, E.

    2014-05-01

    We present the measurement of the energy resolution and the impact of charge sharing for a pixel CdTe detector. This detector will be used in a novel conceptual design for diagnostic systems in the field of nuclear medicine such as positron emission tomography (PET), positron emission mammography (PEM) and Compton camera. The detector dimensions are 10 mm × 10 mm × 2 mm and with a pixel pitch of 1 mm × 1 mm. The pixel CdTe detector is a Schottky diode and it was tested at a bias of -1000 V. The VATAGP7.1 frontend ASIC was used for the readout of the pixel detector and the corresponding single channel electronic noise was found to be σ < 2 keV for all the pixels. We have achieved an energy resolution, FWHM/Epeak, of 7.1%, 4.5% and 0.98% for 59.5, 122 and 511 keV respectively. The study of the charge sharing shows that 16% of the events deposit part of their energy in the adjacent pixel.

  10. Hard-X and gamma-ray imaging detector for astrophysics based on pixelated CdTe semiconductors

    Science.gov (United States)

    Gálvez, J.-L.; Hernanz, M.; Álvarez, L.; Artigues, B.; Ullán, M.; Lozano, M.; Pellegrini, G.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.

    2016-01-01

    Stellar explosions are astrophysical phenomena of great importance and interest. Instruments with high sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators. In order to achieve the needed performance, a hard-X and gamma-ray imaging detector with mm spatial resolution and large enough efficiency is required. We present a detector module which consists of a single CdTe crystal of 12.5 × 12.5mm 2 and 2mm thick with a planar cathode and with the anode segmented in an 11x11 pixel array with a pixel pitch of 1 mm attached to the readout chip. Two possible detector module configurations are considered: the so-called Planar Transverse Field (PTF) and the Parallel Planar Field (PPF). The combination of several modules in PTF or PPF configuration will achieve the desired performance of the imaging detector. The sum energy resolution of all pixels of the CdTe module measured at 122 keV and 356 keV is 3.8% and 2% respectively, in the following operating conditions: PPF irradiation, bias voltage -500 V and temperature -10̂ C.

  11. Delayed electron relaxation in CdTe nanorods studied by spectral analysis of the ultrafast transient absorption

    Energy Technology Data Exchange (ETDEWEB)

    Kriegel, I., E-mail: ilka.kriegel@iit.it [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Scotognella, F. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); CNST of IIT@POLIMI, Via Pascoli 70/3, 20133 Milano (Italy); Soavi, G. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Brescia, R. [Department of Nanochemistry, Istituto Italiano di Tecnologia (IIT), via Morego 30, 16163 Genova (Italy); Rodríguez-Fernández, J.; Feldmann, J. [Photonics and Optoelectronics Group, Department of Physics and CeNS, Ludwig-Maximilians-Universität München, Amalienstr. 54, 80799 Munich (Germany); Nanosystems Initiative Munich (NIM), Schellingstr. 4, 80799 Munich (Germany); Lanzani, G., E-mail: guglielmo.lanzani@iit.it [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); CNST of IIT@POLIMI, Via Pascoli 70/3, 20133 Milano (Italy); Tassone, F. [CNST of IIT@POLIMI, Via Pascoli 70/3, 20133 Milano (Italy)

    2016-06-01

    Highlights: • We study the photophysics of CdTe nanorods by ultrafast absorption spectroscopy. • We fit photobleaching and photoinduced absorption features at all time delays. • Dynamics are extracted from superpositions of bleaches (Gaussians) and derivatives. • Fast non-radiative recombination and slower hole trapping processes are extracted. • A potential approach to unveil ultrafast non-radiative recombination processes. - Abstract: In transient absorption (TA) spectra, the bleach features originating from state filling are overlapped by their energy-shifted derivatives, arising from excited state energy level shifts. This makes the direct extraction of carrier dynamics from a single-wavelength time-trace misleading. Fitting TA spectra in time, as Gaussian functions and their derivative-like shifted Gaussians, allows to individually extract the real dynamics of both photobleached transitions, and their energy shifts. In CdTe nanorods (NRs) we found a delayed heating of holes due to the release of the large excess energy in the electron relaxation process. The slow hole-trapping process is consistent with a high number of surface trap states in these model NRs. Our results show that only a correct disentanglement of bleaching and energy shift contributions provides a reliable framework to extract the underlying carrier relaxation dynamics, including trapping, non-radiative recombination, and eventually carrier multiplication.

  12. A comparative study on fluorescence quenching of CdTe nanocrystals with a serial of polycyclic aromatic hydrocarbons

    Energy Technology Data Exchange (ETDEWEB)

    Baslak, Canan, E-mail: cananbaslak@gmail.com [Advanced Technology Research and Application Center, Selcuk University, 42075 Konya (Turkey); Department of Chemistry, Faculty of Science, Selcuk University, 42075 Konya (Turkey); Kus, Mahmut, E-mail: mahmutkus1@gmail.com [Advanced Technology Research and Application Center, Selcuk University, 42075 Konya (Turkey); Department of Chemical Engineering, Faculty of Engineering, Selcuk University, 42075 Konya (Turkey); Cengeloglu, Yunus [Department of Chemistry, Faculty of Science, Selcuk University, 42075 Konya (Turkey); Ersoz, Mustafa [Advanced Technology Research and Application Center, Selcuk University, 42075 Konya (Turkey); Department of Chemistry, Faculty of Science, Selcuk University, 42075 Konya (Turkey)

    2014-09-15

    We report sensing different polycyclic aromatic hydrocarbons (PAHs) with colloidal CdTe nanocrystals. The effect of molecular structure on quenching rate for 2-hyroxy-1-naphthaldehyde (2H–1N), 9,10-phenanthraquinone (PQ), 9-anthracenecarboxaldehyde (9-AC) and quinoline (Q) is presented. The quenching rate constants are observed to be strongly dependent on the molecular structure. PQ, consisting of two carbonyl groups, shows the highest rate constant while Q shows the worst one. Both static and dynamic quenching are simultaneously observed for PQ and 2H–1N. Therefore extended Stern–Volmer equations are used to calculate rate constants. Results showed that dynamic quenching is a dominant process. The rate constants for PQ, 2H–1N, 9-AC and Q are calculated to be 64.84, 10.73, 10.66 and 1.85 respectively. - Highlights: • We report the fluorescence quenching of colloidal CdTe nanocrystals with different polycyclic aromatic hydrocarbons. • The quenching rate constants are observed to be strongly dependent on the molecular structure. • Static and dynamic quenching are simultaneously observed. • The best quenching was observed for 9,10-phenanthraquinone.

  13. Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing

    Directory of Open Access Journals (Sweden)

    Claudio Davet Gutiérrez-Lazos

    2014-06-01

    Full Text Available This work presents results of the optical and structural characterization of oleic acid-stabilized cadmium telluride nanocrystals (CdTe-NC synthesized by an organometallic route. After being cleaned, the CdTe-NC were dispersed in toluene to obtain an ink-like dispersion, which was drop-cast on glass substrate to deposit a thin film. The CdTe-NC colloidal dispersion as well as the CdTe drop-cast thin films were characterized with regard to the optical and structural properties. TEM analysis indicates that the CdTe-NC have a nearly spherical shape (3.5 nm as mean size. Electron diffraction and XRD diffraction analyses indicated the bulk-CdTe face-centered cubic structure for CdTe-NC. An additional diffraction line corresponding to the octahedral Cd3P2 was also detected as a secondary phase, which probably originates by reacting free cadmium ions with trioctylphosphine (the tellurium reducing agent. The Raman spectrum exhibits two broad bands centered at 141.6 and 162.3 cm−1, which could be associated to the TO and LO modes of cubic CdTe nanocrystals, respectively. Additional peaks located in the 222 to 324 cm−1 range, agree fairly well with the wavenumbers reported for TO modes of octahedral Cd3P2.

  14. New imaging spectrometer CdTe very high spatial and spectral resolution for X and gamma astronomy

    International Nuclear Information System (INIS)

    Dubos, Sebastien

    2015-01-01

    The thesis work presented in this manuscript corresponds to the first development phase of the MC2 project, an ambitious R and D effort to realize a new type of cadmium telluride (CdTe) -based imaging spectrometer for future hard X- and gamma-rays astronomy missions. The final goal is to achieve a 300 micron-pitch pixelated detector plane hybridized with a very low noise front-end electronics for a total pixel density multiplied by 4 compared to the most advanced System recently available in the laboratory, the Caliste HD imaging spectrometer. Moreover, thanks to the joint development of readout circuits adapted to the interconnection of pixelated detectors with low capacitance and low leakage current, spectroscopic performances of such system are assumed to approach inherent limitations of the CdTe detector, especially for the lowest energies. The work was organized in parallel and complementary areas: evaluation of current Systems, feedback and identification of issues associated with the development of highly-resolved detection planes, implementation and complete characterization of a new two-dimensional ASIC specifically developed for this application, and modeling and study of the associated sensor to optimize the design of the detector pattern. Finally, a first hybrid prototype was completed and first experimental tests thereby conducted. (author) [fr

  15. Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions.

    Science.gov (United States)

    Ramos-Ruiz, Adriana; Wilkening, Jean V; Field, James A; Sierra-Alvarez, Reyes

    2017-08-15

    A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (<8.2% and <3.6% of added Cd and Te, respectively). On the other hand, over the course of 30days, 73% of the Cd and 21% of the Te were released to the synthetic leachate of a continuous-flow column simulating the acidic landfill phase. The dissolved Cd concentration was 3.24-fold higher than the TCLP limit (1mgL -1 ), and 650-fold higher than the maximum contaminant level established by the US-EPA for this metal in drinking water (0.005mgL -1 ). In contrast, the release of Cd and Te to the effluent of the continuous-flow column simulating the methanogenic phase of a landfill was negligible. The remarkable difference in the leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. Copyright © 2017 Elsevier B.V. All rights reserved.

  16. The synthesis of newly modified CdTe quantum dots and their application for improvement of latent fingerprint detection

    International Nuclear Information System (INIS)

    Gao Feng; Han Jiaxing; Zhang Jun; Liu Zhiliang; Li Qun; Sun Xiufeng; Zheng Jincheng; Bao Liru; Li Xin

    2011-01-01

    Motivated by the urgent demand for the detection of latent fingerprints using fluorescence-based nanotechnology, this work was devoted to developing a simple synthetic approach to obtain positively charged CdTe QDs with enhanced fluorescence and affinity for the improvement of latent fingerprint detection. Through this synthetic method, the positively charged CdTe-COONH 3 NH 3 + QDs were successfully achieved by using hydrazine hydrate as both the surface stabilizer and pH adjuster during the preparation process. In comparison to the negatively charged CdTe-COO - QDs prepared by using sodium hydroxide as the pH adjuster, the CdTe-COONH 3 NH 3 + QDs showed enhanced fluorescence. The effectiveness of CdTe-COO - and CdTe-COONH 3 NH 3 + QDs for detection of latent fingerprints present on a large variety of smooth objects was systematically and comparatively studied. The results indicate that the detection of latent fingerprints by using CdTe-COONH 3 NH 3 + QDs as fluorescent labeling marks was greatly enhanced, and more characteristic finger ridge details were detected and identified due to their enhanced affinity with latent fingerprints, in comparison to the detection by using CdTe-COO - QDs as fluorescent labeling marks. The CdTe-COONH 3 NH 3 + QDs show superior detection capability than the CdTe-COO - QDs, which greatly improves the applicability of CdTe QDs for practical application in latent fingerprint detection.

  17. Ellipsometry of rough CdTe(211)B-Ge(211) surfaces grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Badano, Giacomo; Ballet, Philippe; Zanatta, Jean-Paul; Baudry, Xavier; Million, Alain; Garland, James W.

    2006-01-01

    The effect of surface roughness on the ellipsometric response of semiconductor surfaces is investigated. CdTe(211)B layers were grown on Ge(211) by molecular beam epitaxy using less than optimal growth conditions to enhance the formation of surface roughness. Their optical properties, measured by rotating-compensator ellipsometry, showed small but significant sample-to-sample differences not explainable in terms of nanometer-scale roughness. A critical-point analysis established that the critical-point structure of the dielectric function was the same for all samples. This result suggested that the observed sample-to-sample variations were due to macroscopic roughness, which scatters off-specular light into the detector, thereby causing errors. We introduced tentative corrections for off-specular reflection that fitted the observed differences and thus supported the idea that off-specular reflection was responsible for the observed differences. These results were obtained using CdTe but are easily extensible to other rough opaque materials

  18. Phonon Raman spectra of colloidal CdTe nanocrystals: effect of size, non-stoichiometry and ligand exchange

    Directory of Open Access Journals (Sweden)

    Lokteva Irina

    2011-01-01

    Full Text Available Abstract Resonant Raman study reveals the noticeable effect of the ligand exchange on the nanocrystal (NC surface onto the phonon spectra of colloidal CdTe NC of different size and composition. The oleic acid ligand exchange for pyridine ones was found to change noticeably the position and width of the longitudinal optical (LO phonon mode, as well as its intensity ratio to overtones. The broad shoulder above the LO peak frequency was enhanced and sharpened after pyridine treatment, as well as with decreasing NC size. The low-frequency mode around 100 cm-1 which is commonly related with the disorder-activated acoustical phonons appears in smaller NCs but is not enhanced after pyridine treatment. Surprisingly, the feature at low-frequency shoulder of the LO peak, commonly assigned to the surface optical phonon mode, was not sensitive to ligand exchange and concomitant close packing of the NCs. An increased structural disorder on the NC surface, strain and modified electron-phonon coupling is discussed as the possible reason of the observed changes in the phonon spectrum of ligand-exchanged CdTe NCs. PACS: 63.20.-e, 78.30.-j, 78.67.-n, 78.67.Bf

  19. Novel patterning of CdS / CdTe thin film with back contacts for photovoltaic application

    Science.gov (United States)

    Ilango, Murugaiya Sridar; Ramasesha, Sheela K.

    2018-04-01

    The heterostructure of patterned CdS / CdTe thin films with back contact have been devised with electron beam lithography and fabricated using sputter deposition technique. The metallic contacts for n-CdS and p-CdTe are patterned such that both are placed at the bottom of the cell. This avoids losses due to contact shading and increases absorption in the window layer. Patterning of the device surface helps in increasing the junction area which can modulate the absorption of more number of photons due to total internal reflection. Computing the surface area between a planar and a patterned device has revealed 133% increase in the junction area. The physical and optical properties of the sputter-deposited CdS / CdTe layers are also presented. J- V characteristics of the solar cell showed the fill factor to be 25.9%, open circuit voltage to be 17 mV and short-circuit current density to be 113.68 A/m2. The increase in surface area is directly related to the increase in the short circuit current of the photovoltaic cell, which is observed from the results of simulated model in Atlas / Silvaco.

  20. Selective optosensing of clenbuterol and melamine using molecularly imprinted polymer-capped CdTe quantum dots.

    Science.gov (United States)

    The Huy, Bui; Seo, Min-Ho; Zhang, Xinfeng; Lee, Yong-Ill

    2014-07-15

    A novel procedure for the optosensing of clenbuterol and melamine was developed using molecularly imprinted polymer-capped CdTe quantum dots (MIP-CdTe QDs). The MIP-CdTe QDs were synthesized by a radical polymerization process among CdTe QDs, a template, 3-aminopropyltriethoxysilane (APTES) and tetraethoxysilane (TEOS). The sizes of the MIP-CdTe particles were controlled by the speed of polymerization, concentration of the template, concentration of the quantum dots, and the ratio of template, monomer and cross-linker. Excellent selectivity and high sensitivity of MIP-CdTe QDs toward clenbuterol/melamine molecules were observed based on the fluorescence quenching of QDs. Experimental results showed that the optimum molar ratios of template, monomer, and cross-linker were 1:8:20 and 1:4:20 for analyzing clenbuterol and melamine, respectively. Under optimum conditions, these MIP-CdTe QDs showed a limit of detection of 0.4 μM (120 ng/mL) for clenbuterol and 0.6 μM (75 ng/mL) for melamine. The feasibility of the developed method in real samples was successfully evaluated through the analysis of clenbuterol and melamine in milk and liver samples with satisfactory recoveries of 92-97%. The MIP-CdTe QDs could be easily regenerated for subsequent sample analysis with water. Copyright © 2014 Elsevier B.V. All rights reserved.

  1. Growth of ZnO nanowires through thermal oxidation of metallic zinc films on CdTe substrates

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, O., E-mail: oscar@fmc.uva.es [Optronlab Group, Dpto. Fisica Materia Condensada, Edificio I-D, Universidad de Valladolid, Paseo de Belen 1, 47011, Valladolid (Spain); Hortelano, V.; Jimenez, J. [Optronlab Group, Dpto. Fisica Materia Condensada, Edificio I-D, Universidad de Valladolid, Paseo de Belen 1, 47011, Valladolid (Spain); Plaza, J.L.; Dios, S. de; Olvera, J.; Dieguez, E. [Laboratorio de Crecimiento de Cristales, Departamento de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Fath, R.; Lozano, J.G.; Ben, T.; Gonzalez, D. [Dpto. Ciencia de los Materiales e Ingenieria Metalurgica y Q.I., Facultad de Ciencias, Apdo. 40, 11510 Puerto Real, Cadiz (Spain); Mass, J. [Dpto. de Fisica, Universidad del Norte, Km.5 Via Puerto Colombia, Barranquilla (Colombia)

    2011-04-28

    Research highlights: > ZnO nanowires grown from thermal Zn oxidation. > TEM reveals high quality thin nanowires several microns long. > New phase formation at long oxidation time. > Good spectroscopic properties measured by Raman, Photo and Cathodoluminsecence spectroscopies. - Abstract: <112-bar 0> wurtzite ZnO nanowires (NWs) have been obtained by oxidizing in air at 500 deg. C thermally evaporated Zn metal films deposited onto CdTe substrates. The presence of Cd atoms from the substrate on the ZnO seeding layer and NWs seems to affect the growth of the NWs. The effects of the oxidation time on the structural and optical properties of the NWs are described in detail. It is shown that the NWs density decreases and their length increases when increasing the oxidation time. Thicker Zn layers result in thinner and longer ZnO NWs. Very long oxidation times also lead to the formation of a new CdO phase which is related to the partial destruction and quality reduction of the NWs. The possible process for ZnO NW formation on CdTe substrates is discussed.

  2. Development of a pixelated CdTe detector module for a hard-x and gamma-ray imaging spectrometer application

    Science.gov (United States)

    Galvèz, J.-L.; Hernanz, M.; Álvarez, L.; Artigues, B.; Álvarez, J.-M.; Ullán, M.; Lozano, M.; Pellegrini, G.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.

    2016-07-01

    Stellar explosions are relevant and interesting astrophysical phenomena. Since long ago we have been working on the characterization of novae and supernovae in X and gamma-rays, with the use of space missions. We have also been involved in feasibility studies of future instruments in the energy range from several keV up to a few MeV, in collaboration with other research institutes. High sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators, e.g., Supernovae and Classical Novae. In order to fulfil the combined requirement of high detection efficiency with good spatial and energy resolution, an initial module prototype based on CdTe pixel detectors is being developed. The detector dimensions are 12.5mm x 12.5mm x 2mm with a pixel pitch of 1mm x 1mm. Two kinds of CdTe pixel detectors with different contacts have been tested: ohmic and Schottky. Each pixel is bump bonded to a fanout board made of Sapphire substrate and routed to the corresponding input channel of the readout VATAGP7.1 ASIC, to measure pixel position and pulse height for each incident gamma-ray photon. The study is complemented by the simulation of the CdTe module performance using the GEANT 4 and MEGALIB tools, which will help us to optimise the detector design. We will report on the spectroscopy characterisation of the CdTe detector module as well as the study of charge sharing.

  3. Atomic-resolution study of dislocation structures and interfaces in poly-crystalline thin film CdTe using aberration-corrected STEM

    Science.gov (United States)

    Paulauskas, Tadas; Colegrove, Eric; Buurma, Chris; Kim, Moon; Klie, Robert

    2014-03-01

    Commercial success of CdTe-based thin film photovoltaic devices stems from its nearly ideal direct band gap which very effectively couples to Sun's light spectrum as well as ease of manufacturing and low cost of these modules. However, to further improve the conversion efficiency beyond 20 percent, it is important to minimize the harmful effects of grain boundaries and lattice defects in CdTe. Direct atomic-scale characterization is needed in order identify the carrier recombination centers. Likewise, it is necessary to confirm that passivants in CdTe, such as Cl, are able to diffuse and bind to the target defects. In this study, we characterize dislocation structures and grain boundaries in poly-crystalline CdTe using aberration-corrected cold-field emission scanning transmission electron microscopy (STEM). The chemical composition of Shockley partial, Frank and Lomer-Cottrell dislocations is examined via atomic column-resolved X-ray energy dispersive (XEDS) and electron energy-loss spectroscopies (EELS). Segregation of Cl towards dislocation cores and grain boundaries is shown in CdCl2 treated samples. We also investigate interfaces in ultra-high-vacuum bonded CdTe bi-crystals with pre-defined misorientation angles which are intended to mimic grain boundaries. Funded by: DOE EERE Sunshot Award EE0005956.

  4. Energy Band Gap, Intrinsic Carrier Concentration and Fermi Level of CdTe Bulk Crystal between 304 K and 1067 K

    Science.gov (United States)

    Su, Ching-Hua

    2007-01-01

    Optical transmission measurements were performed on CdTe bulk single crystal. It was found that when a sliced and polished CdTe wafer was used, a white film started to develop when the sample was heated above 530 K and the sample became opaque. Therefore, a bulk crystal of CdTe was first grown in the window area by physical vapor transport; the optical transmission was then measured and from which the energy band gap was derived between 304 and 1067 K. The band gaps of CdTe can be fit well as a function of temperature using the Varshini expression: Eg (e V) = 1.5860 - 5.9117xl0(exp -4) T(sup 2)/(T + 160). Using the band gap data, the high temperature electron-hole equilibrium was calculated numerically by assuming the Kane's conduction band structure and a heavy-hole parabolic valance band. The calculated intrinsic carrier concentrations agree well with the experimental data reported previously. The calculated intrinsic Fermi levels between 270 and 1200 K were also presented.

  5. Advanced Processing of CdTe- and CuInxGa1-xSe2-Based Solar Cells: Final Report: 18 April 1995 - 31 May 1998

    International Nuclear Information System (INIS)

    Jayapalan, A.; Tetali, B.; Ferekides, C.S.; Marinskiy, D.; Morel, D.L.; Lin, H.; Sankaranarayanan, H.; Bhatt, R.; Narayanaswamy, R.; Prabhakaran, R.; Marinskaya, S.; Zafar, S.

    1999-01-01

    This report summarizes work performed by the University of South Florida Department of Electrical Engineering under this subcontract. The Cadmium telluride(CdTe) portion of this project deals with the development of high-efficiency thin-filmed CdTe solar cells using fabrication techniques that are suitable for manufacturing environments

  6. Improving surface smoothness and photoluminescence of CdTe(1 1 1)A on Si(1 1 1) substrates grown by molecular beam epitaxy using Mn atoms

    International Nuclear Information System (INIS)

    Wang, Jyh-Shyang; Tsai, Yu-Hsuan; Chen, Chang-Wei; Dai, Zi-Yuan; Tong, Shih-Chang; Yang, Chu-Shou; Wu, Chih-Hung; Yuan, Chi-Tsu; Shen, Ji-Lin

    2014-01-01

    Highlights: • CdTe(1 1 1)A epilayers were grown on Si(1 1 1) substrates by molecular beam epitaxy. • We report an enhanced growth using Mn atoms. • The significant improvements in surface quality and optical properties were found. - Abstract: This work demonstrates an improvement of the molecular beam epitaxial growth of CdTe(1 1 1)A epilayer on Si(1 1 1) substrates using Mn atoms. The reflection high-energy electron diffraction patterns show that the involvement of some Mn atoms in the growth of CdTe(1 1 1)A is even more effective than the use of a buffer layer with a smooth surface for forming good CdTe(1 1 1)A epilayers. 10 K Photoluminescence spectra show that the incorporation of only 2% Mn significantly reduced the intensity of defect-related emissions and considerably increased the integral intensity of exciton-related emissions by a large factor of about 400

  7. One-Pot Aqueous Phase Synthesis of CdTe and CdTe/ZnS Core/Shell Quantum Dots.

    Science.gov (United States)

    Zhou, Beiying; Yang, Fengjiu; Zhang, Xin; Cheng, Wenyan; Luo, Wei; Wang, Lianjun; Jiang, Wan

    2016-06-01

    A facile and economical one-pot strategy has been developed for the synthesis of water-solute CdTe and CdTe/ZnS core/shell quantum dots (QDs) using tellurium dioxide (TeO2) as a tellurium precursor and thioglycolic acid (TGA) as stabilizer without any pre-treatment and inert atmosphere protection. As-synthesized QDs were characterized by transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), electron diffraction spectroscopy (EDS), X-ray powder diffraction (XRD), UV-vis and photoluminescence (PL). The spherical particles were uniformly distributed with the average diameters of 3.2 nm (CdTe QDs) and -5 nm (CdTe/ZnS QDs). By altering the reaction conditions, the emission wavelengths of the CdTe core QDs and CdTe/ZnS core/shell QDs could be tuned from 508 to 574 nm and 526 to 600 nm with narrow full widths at half maximum (FWHM) of 33 to 58 nm, respectively. Meanwhile, on the optimum condition, the luminescence efficiency of CdTe/ZnS QDs can achieve to 74%, which was higher than that of CdTe core QDs (24%).

  8. High Flux Energy-Resolved Photon-Counting X-Ray Imaging Arrays with CdTe and CdZnTe for Clinical CT

    International Nuclear Information System (INIS)

    Barber, William C.; Hartsough, Neal E.; Gandhi, Thulasidharan; Iwanczyk, Jan S.; Wessel, Jan C.; Nygard, Einar; Malakhov, Nail; Wawrzyniak, Gregor; Dorholt, Ole; Danielsen, Roar

    2013-06-01

    We have fabricated fast room-temperature energy dispersive photon counting x-ray imaging arrays using pixellated cadmium zinc (CdTe) and cadmium zinc telluride (CdZnTe) semiconductors. We have also fabricated fast application specific integrated circuits (ASICs) with a two dimensional (2D) array of inputs for readout from the CdZnTe sensors. The new CdTe and CdZnTe sensors have a 2D array of pixels with a 0.5 mm pitch and can be tiled in 2D. The new 2D ASICs have four energy discriminators per pixel with a linear energy response across the entire dynamic range for clinical CT. The ASICs can also be tiled in 2D and are designed to fit within the active area of the 2D sensors. We have measured several important performance parameters including; an output count rate (OCR) in excess of 20 million counts per second per square mm, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor less than 20 keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdTE and CdZnTe sensors incurring very little additional capacitance. We present a comparison of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, and noise floor. (authors)

  9. Preparation and characterization of bifunctional dendrimer modified Fe3O4/CdTe nanoparticles with both luminescent and superparamagnetic properties

    International Nuclear Information System (INIS)

    Wang, Xiuling; Gu, Yinjun; Dong, Shuling; Zhao, Qin; Liu, Yongjian

    2015-01-01

    Highlights: • The fluorescent superparamagnetic dendrimeric Fe 3 O 4 /CdTe nanoparticles are synthesized in this paper. • The synthesized nanocomposites maintain excellent magnetic properties. • The synthesized nanocomposites maintain highly luminescent markers with narrow emission bands. - Abstract: Magnetic nanoparticles Fe 3 O 4 were prepared by hydrothermal coprecipitation of ferric and ferrous ions using NaOH. The surface modification of Fe 3 O 4 nanoparticle by dendrimers has rendered the nanoparticle surface with enriched amine groups which facilitated the adsorption and conjugation of thioglycolic acid (TGA) modified CdTe quantum dots to form a stable hybrid nanostructure. Three generations (first generation: G0F, second generation: G1F, third generation: G3F) of bifunctional dendrimeric Fe 3 O 4 /CdTe nanoparticles were successfully prepared using this technique and characterized by microscopy. The optical and magnetic properties of the dendrimeric Fe 3 O 4 /CdTe nanoparticle were also investigated. The microscopic study reveals 3 different sizes for 3 generations, 16 nm (G0F), 31 nm (G1F) and 47 nm (G3F). Among three generations of nanoparticles, the G1F has the best optical property with a luminescent quantum yield of 25.6% and the G0F has the best magnetic property with a saturation magnetization of 19.3 emμ/g

  10. Near infrared laser annealing of CdTe and in-situ measurement of the evolution of structural and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Simonds, Brian J.; Misra, Sudhajit [Materials Science and Engineering, University of Utah, 50 S. Central Campus Drive, Salt Lake City, Utah 84122 (United States); Paudel, Naba [Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States); Vandewal, Koen; Salleo, Alberto [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Ferekides, Christos [Department of Electrical Engineering, University of South Florida, 4202 E. Fowler Ave., Tampa, Florida 33620 (United States); Scarpulla, Michael A. [Materials Science and Engineering, University of Utah, 50 S. Central Campus Drive, Salt Lake City, Utah 84122 (United States); Electrical and Computer Engineering, University of Utah, 50 S. Central Campus Drive, Salt Lake City, Utah 84122 (United States)

    2016-04-28

    The high performance of polycrystalline CdTe thin film solar cells is enabled by annealing in the presence of Cl. This process is typically carried out for tens of minutes resulting in reduction of defect states within the bandgap among other beneficial effects. In this work, we investigate laser annealing as a means of rapidly annealing CdTe using a continuous wave sub-bandgap 1064 nm laser. The partial transmission of the beam allows us to monitor the annealing process in-situ and in real time. We find that optoelectronic and structural changes occur through two distinct kinetic processes resulting in the removal of deep defects and twinned regions, respectively. A multilayer optical model including surface roughness is used to interpret both the in-situ transmission as well as ex-situ reflectivity measurements. These experiments demonstrate beneficial material changes resulting from sub-bandgap laser-driven CdCl{sub 2} treatment of CdTe in minutes, which is an important step towards accelerating the processing of the CdTe absorber layer.

  11. Copper ion-induced fluorescence band shift of CdTe quantum dots: a highly specific strategy for visual detection of Cu(2+) with a portable UV lamp.

    Science.gov (United States)

    Lu, Xiaohui; Zhao, Yunjie; Zhang, Jinjun; Lu, Xiaozhen; Wang, Yucong; Liu, Chenghui

    2015-12-07

    We have developed a new colorimetric strategy that allows visual detection of Cu(2+) under the irradiation of a UV lamp with high specificity based on the phenomenon that copper ions may lead to a fluorescence band shift of CdTe quantum dots (QDs) while other concomitant ions will not.

  12. Elucidating PID Degradation Mechanisms and In Situ Dark I-V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules

    DEFF Research Database (Denmark)

    Hacke, Peter; Spataru, Sergiu; Johnston, Steve

    2016-01-01

    A progression of potential-induced degradation (PID) mechanisms are observed in CdTe modules, including shunting/junction degradation and two different manifestations of series resistance depending on the stress level and water ingress. The dark I-V method for in-situ characterization of Pmax bas...

  13. Significant enhancement of the quantum yield of CdTe nanocrystals synthesized in aqueous phase by controlling the pH and concentrations of precursor solutions

    International Nuclear Information System (INIS)

    Li Liang; Qian Huifeng; Fang Nenghu; Ren Jicun

    2006-01-01

    In this paper, we systematically investigated the aqueous synthesis conditions of CdTe nanocrystals (QDs), and found that the pH value and the concentrations of precursors significantly affected the photoluminescence quantum yield (QY) of CdTe QDs. When the concentration of precursors (Cd) was 1.25 mM, and the pH of Cd precursors solution was about 8.0, CdTe QDs with high QY up to 40-67% were successfully prepared in aqueous phase. Moreover, these high luminescent QDs showed excellent stabilities in aqueous phases, and their luminescence was nearly independent of the pH of the colloid solution. The XPS and XRD characterizations implied that the high luminescence of the QDs synthesized at lower pH was possibly attributed to the formation of the thicker shell (cadmium-3-mercaptopropionic acid complexes) on particles surface, which not only decreased the traps on QDs surface, but also acted as a steric barrier to control the kinetics of QDs growth and led to the formation of a better surface structure. Our modification of conventional aqueous synthesis dramatically improved the QY of the prepared CdTe QDs, and it will become an attractive alternative to the synthesis of QDs in organic phase

  14. Cytotoxicity of CdTe quantum dots in human umbilical vein endothelial cells: the involvement of cellular uptake and induction of pro-apoptotic endoplasmic reticulum stress

    Directory of Open Access Journals (Sweden)

    Yan M

    2016-02-01

    Full Text Available Ming Yan,1,* Yun Zhang,2,* Haiyan Qin,3 Kezhou Liu,1 Miao Guo,1 Yakun Ge,1 Mingen Xu,1 Yonghong Sun,4 Xiaoxiang Zheng4 1Department of Biomedical Engineering, College of Life Information Science and Instrument Engineering, Hangzhou Dianzi University, Hangzhou, 2Basic Medical Sciences, College of Medicine, Shaoxing University, Shaoxing, 3Department of Chemistry, Zhejiang University, 4Zhejiang Provincial Key Laboratory of Cardio-Cerebral Vascular Detection Technology and Medicinal Effectiveness Appraisal, Department of Biomedical Engineering, Zhejiang University, Hangzhou, People’s Republic of China *These authors contributed equally to this work Abstract: Cadmium telluride quantum dots (CdTe QDs have been proposed to induce oxidative stress, which plays a crucial role in CdTe QDs-mediated mitochondrial-dependent apoptosis in human umbilical vein endothelial cells (HUVECs. However, the direct interactions of CdTe QDs with HUVECs and their potential impairment of other organelles like endoplasmic reticulum (ER in HUVECs are poorly understood. In this study, we reported that the negatively charged CdTe QDs (–21.63±0.91 mV, with good dispersity and fluorescence stability, were rapidly internalized via endocytosis by HUVECs, as the notable internalization could be inhibited up to 95.52% by energy depletion (NaN3/deoxyglucose or low temperature. The endocytosis inhibitors (methyl-β-cyclodextrin, genistein, sucrose, chlorpromazine, and colchicine dramatically decreased the uptake of CdTe QDs by HUVECs, suggesting that both caveolae/raft- and clathrin-mediated endocytosis were involved in the endothelial uptake of CdTe QDs. Using immunocytochemistry, a striking overlap of the internalized CdTe QDs and ER marker was observed, which indicates that QDs may be transported to ER. The CdTe QDs also caused remarkable ER stress responses in HUVECs, confirmed by significant dilatation of ER cisternae, upregulation of ER stress markers GRP78/GRP94, and

  15. Synthesis of surface molecular imprinting polymer on SiO{sub 2}-coated CdTe quantum dots as sensor for selective detection of sulfadimidine

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Zhiping; Ying, Haiqin; Liu, Yanyan [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Xu, Wanzhen, E-mail: xwz09@ujs.edu.cn [School of the Environment and Safety Engineering, Jiangsu University, Zhenjiang 212013 (China); Yang, Yanfei; Luan, Yu [Zhenjiang Institute for Drug Control of Jiangsu Province, Zhenjiang 212003 (China); Lu, Yi; Liu, Tianshu [Zhenjiang Entry-Exit Inspection Quarantine Bureau, Zhenjiang 212008 (China); Yu, Shui [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Yang, Wenming, E-mail: ywm@ujs.edu.cn [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China)

    2017-05-15

    Highlights: • Surface molecular imprinting technology and SiO{sub 2}-coated CdTe QDs were combined to prepare a novel fluorescent sensor for selective detection of sulfadimidine. • The relative fluorescent intensity weakened in a linear way with the increasing concentration of sulfadimidine in the range of 10–60 μmol L{sup −1}. • The practical application of the fluorescent MIP sensor was evaluated by means of analyzing sulfadimidine in the real milk samples. The recoveries were at the range of 90.3–99.6% and the relative standard deviation ranged from 1.9 to 3.1%. - Abstract: This paper demonstrates a facile method to synthesize surface molecular imprinting polymer (MIP) on SiO{sub 2}-coated CdTe QDs for selective detection of sulfadimidine (SM{sub 2}). The fluorescent MIP sensor was prepared using cadmium telluride quantum dots (CdTe QDs) as the material of fluorescent signal readout, sulfadimidine as template molecule, 3-aminopropyltriethoxysilane (APTES) as functional monomer and tetraethyloxysilane (TEOS) as cross-linking agent. The CdTe cores were embed in the silicon shells by a sol-gel reaction and then the molecular imprinting layers were immobilized on the surface of the SiO{sub 2}-coated CdTe QDs. Under the optimized conditions, the relative fluorescent intensity weakened in a linear way with the increasing concentration of sulfadimidine in the range of 10–60 μmol L{sup −1}. The practical application of the fluorescent MIP sensor was evaluated by means of analyzing sulfadimidine in the real milk samples. The recoveries were at the range of 90.3–99.6% and the relative standard deviation (RSD) ranged from 1.9 to 3.1%, which indicates the successful synthesis of the fluorescent MIP sensor. This sensor provides an alternative solution for selective determination of sulfadimidine from real milk samples.

  16. Characterization of the native defects in HgTe, CdTe, Hg1-x, CdxTe by positron annihilation: evidence of native vacancies

    International Nuclear Information System (INIS)

    Geffroy, B.

    1987-12-01

    Direct evidence of native vacancies is found in as-grown Cd x Hg 1-x Te single crystals prepared by the travelling heating method (THM). The vacancies have characteristics depending on the annealing undergone by the crystals after their growth and on the conduction type in the crystals. In as-grown CdTe and Cd 0.7 Hg 0.3 Te (THM), native vacancies are found in n-type materials. In as-grown HgTe and Cd 0.2 Hg 0.8 Te (THM), native vacancies are found in p materials. They disappear after stoechiometric annealings in which the crystals are converted n-type. From the positron lifetime at the vacancies, 320±4 ps, one can show that the native vacancies are metallic vacancies V Cd in CdTe, V Hg in HgTe, V Hg or/and V Cd in Cd x Hg 1-x Te alloys. The concentration of the metallic vacancies is estimated in as-grown crystals. In as-grown p-type CdTe and Cd 0.7 Hg 0.3 Te (THM), in as-grown then subsequently p-type annealed HgTe and Cd 0.2 Hg 0.8 Te (THM), vacancy type defects are also found giving rise to lifetime of about 290 ps. These defects are also found in crystals grown by Bridgman method. The nature of these defects is discussed. The In doping effects on the metallic vacancies have been studied. It is shown that In addition increases the concentration of metallic vacancies in CdTe (In) (THM). Vacancy-In complexes appear for In concentrations of the order or above 10 17 cm -3 . These complexes disappear after decompensating annealings and only the metallic vacancies survive. Small vacancies clusters of two or three vacancies are found after deformation at room temperature in CdTe (Mn) (THM) [fr

  17. Structural and chemical evolution of the CdS:O window layer during individual CdTe solar cell processing steps

    Energy Technology Data Exchange (ETDEWEB)

    Abbas, A.; Meysing, D. M.; Reese, M. O.; Barnes, T. M.; Walls, J. M.; Wolden, C. A.

    2018-01-01

    Oxygenated cadmium sulfide (CdS:O) is often used as the n-type window layer in high-performance CdTe heterojunction solar cells. The as-deposited layer prepared by reactive sputtering is XRD amorphous, with a bulk composition of CdS0.8O1.2. Recently it was shown that this layer undergoes significant transformation during device fabrication, but the roles of the individual high temperature processing steps was unclear. In this work high resolution transmission electron microscopy coupled to elemental analysis was used to understand the evolution of the heterojunction region through the individual high temperature fabrication steps of CdTe deposition, CdCl2 activation, and back contact activation. It is found that during CdTe deposition by close spaced sublimation at 600 degrees C the CdS:O film undergoes recrystallization, accompanied by a significant (~30%) reduction in thickness. It is observed that oxygen segregates during this step, forming a bi-layer morphology consisting of nanocrystalline CdS adjacent to the tin oxide contact and an oxygen-rich layer adjacent to the CdTe absorber. This bilayer structure is then lost during the 400 degrees C CdCl2 treatment where the film transforms into a heterogeneous structure with cadmium sulfate clusters distributed randomly throughout the window layer. The thickness of window layer remains essentially unchanged after CdCl2 treatment, but a ~25 nm graded interfacial layer between CdTe and the window region is formed. Finally, the rapid thermal processing step used to activate the back contact was found to have a negligible impact on the structure or composition of the heterojunction region.

  18. The influence of physical and technological magnetron sputtering modes on the structure and optical properties of CdS and CdTe films

    Directory of Open Access Journals (Sweden)

    G.S. Khrypunov

    2017-07-01

    Full Text Available To create technology for preparation of CdS and CdTe thin films by direct current magnetron sputtering, the influence of physical and technological condensation modes on the crystal structure and optical properties of these films were investigated. The laboratory method of DC magnetron sputtering with preheating of the target for the mentioned films on glass substrates was developed. We obtained the CdS layers with hexagonal structure 150…200 nm thick under conditions when the plasma discharge current density was 1.1 mA/cm2 and the deposition rate – 30…40 nm/min. The bandgap in the obtained CdS films is Eg = 2.38…2.41 eV. After annealing in vacuum, the optical transparence of CdS films reaches 80…90%, which allows to use these films as a transparent window layer in solar cells based on heterojunctions of CdS/CdTe. When the plasma discharge current density is 2.2…5.4 mA/cm2 and the deposition rate is 200 nm/min, we obtained CdTe layers with hexagonal structure up to 5 µm thick. The transmittance of CdTe films with hexagonal structure in the wavelength range of the visible spectrum is up to 5%, and in the infrared spectral range is about 60%. The bandgap in the obtained CdTe layers of different thickness is 1.52…1.54 eV. After chloride treatment as a result of the phase transition wurtzite–sphalerite, the investigated CdTe films contain only the stable cubic structure and can be used as a base layer of solar cells.

  19. Fluorescence enhancement of CdTe quantum dots by HBcAb-HRP for sensitive detection of H2O2in human serum.

    Science.gov (United States)

    Gong, Tingting; Liu, Junfeng; Wu, Yiwei; Xiao, Yao; Wang, Xuehan; Yuan, Siqi

    2017-06-15

    A simple, high selective, ultra-sensitive and stable biosensor based on hepatitis B core antibody labeled with horseradish peroxidase (HBcAb-HRP) induced fluorescent enhancement of CdTe QDs for recognition of H 2 O 2 have been constructed. In this assay, sulfurs in HBcAb-HRP, which possess a strong affinity towards Cd 2+ , can improve greatly the recombination fluorescence of CdTe QDs by creating more radiative centers at CdTe/Cd-SR complex. Then, H 2 O 2 oxidizes Cd-S bonds in CdTe QDs to organic disulfide product (RS-SR), causing thioglycolic acid (TGA) and HBcAb-HRP detach from surface of CdTe QDs and thus leading to fluorescence quenching. Just with the addition of HBcAb-HRP, sensitivity of the new biosensor has been improved by near one order of magnitude as compared with CdTe QDs probe. Detection limit of HBcAb-HRP-CdTe QDs biosensor for determination of H 2 O 2 was 6.9×10 -8 mol L -1 (3σ/slope), and the excellent linear range was 1.0×10 -7 ~1.5×10 -4 molL -1 . By using sodium diethyldithiocarbamate (DDTC) and NH 4 OH as masking agents of Ag + , Hg 2+ and Cu 2+ , H 2 O 2 can be selectively detected in coexistence with Ag + , Hg 2+ and Cu 2+ , and the biosensor has been used to detect H 2 O 2 in human serum with satisfactory results. The superior properties of this biosensor showed great potential usage in more chemical and biological researches. Copyright © 2017 Elsevier B.V. All rights reserved.

  20. CdTe and CdSe quantum dots: synthesis, characterizations and applications in agriculture

    International Nuclear Information System (INIS)

    Ung, Thi Dieu Thuy; Tran, Thi Kim Chi; Pham, Thu Nga; Nguyen, Quang Liem; Nguyen, Duc Nghia; Dinh, Duy Khang

    2012-01-01

    This paper highlights the results of the whole work including the synthesis of highly luminescent quantum dots (QDs), characterizations and testing applications of them in different kinds of sensors. Concretely, it presents: (i) the successful synthesis of colloidal CdTe and CdSe QDs, their core/shell structures with single- and/or double-shell made by CdS, ZnS or ZnSe/ZnS; (ii) morphology, structural and optical characterizations of the synthesized QDs; and (iii) testing examples of QDs as the fluorescence labels for agricultural-bio-medical objects (for tracing residual pesticide in agricultural products, residual clenbuterol in meat/milk and for detection of H5N1 avian influenza virus in breeding farms). Overall, the results show that the synthesized QDs have very good crystallinity, spherical shape and strongly emit at the desired wavelengths between ∼500 and 700 nm with the luminescence quantum yield (LQY) of 30–85%. These synthesized QDs were used in fabrication of the three testing fluorescence QD-based sensors for the detection of residual pesticides, clenbuterol and H5N1 avian influenza virus. The specific detection of parathion methyl (PM) pesticide at a content as low as 0.05 ppm has been realized with the biosensors made from CdTe/CdS and CdSe/ZnSe/ZnS QDs and the acetylcholinesterase (AChE) enzymes. Fluorescence resonance energy transfer (FRET)-based nanosensors using CdTe/CdS QDs conjugated with 2-amino-8-naphthol-6-sulfonic acid were fabricated that enable detection of diazotized clenbuterol at a content as low as 10 pg ml −1 . For detection of H5N1 avian influenza virus, fluorescence biosensors using CdTe/CdS QDs bound on the surface of chromatophores extracted and purified from bacteria Rhodospirillum rubrum were prepared and characterized. The specific detection of H5N1 avian influenza virus in the range of 3–50 ng μl −1 with a detection limit of 3 ng μL −1 has been performed based on the antibody-antigen recognition. (review)

  1. CdTe and CdSe quantum dots: synthesis, characterizations and applications in agriculture

    Science.gov (United States)

    Dieu Thuy Ung, Thi; Tran, Thi Kim Chi; Nga Pham, Thu; Nghia Nguyen, Duc; Khang Dinh, Duy; Liem Nguyen, Quang

    2012-12-01

    This paper highlights the results of the whole work including the synthesis of highly luminescent quantum dots (QDs), characterizations and testing applications of them in different kinds of sensors. Concretely, it presents: (i) the successful synthesis of colloidal CdTe and CdSe QDs, their core/shell structures with single- and/or double-shell made by CdS, ZnS or ZnSe/ZnS; (ii) morphology, structural and optical characterizations of the synthesized QDs; and (iii) testing examples of QDs as the fluorescence labels for agricultural-bio-medical objects (for tracing residual pesticide in agricultural products, residual clenbuterol in meat/milk and for detection of H5N1 avian influenza virus in breeding farms). Overall, the results show that the synthesized QDs have very good crystallinity, spherical shape and strongly emit at the desired wavelengths between ˜500 and 700 nm with the luminescence quantum yield (LQY) of 30-85%. These synthesized QDs were used in fabrication of the three testing fluorescence QD-based sensors for the detection of residual pesticides, clenbuterol and H5N1 avian influenza virus. The specific detection of parathion methyl (PM) pesticide at a content as low as 0.05 ppm has been realized with the biosensors made from CdTe/CdS and CdSe/ZnSe/ZnS QDs and the acetylcholinesterase (AChE) enzymes. Fluorescence resonance energy transfer (FRET)-based nanosensors using CdTe/CdS QDs conjugated with 2-amino-8-naphthol-6-sulfonic acid were fabricated that enable detection of diazotized clenbuterol at a content as low as 10 pg ml-1. For detection of H5N1 avian influenza virus, fluorescence biosensors using CdTe/CdS QDs bound on the surface of chromatophores extracted and purified from bacteria Rhodospirillum rubrum were prepared and characterized. The specific detection of H5N1 avian influenza virus in the range of 3-50 ng μl-1 with a detection limit of 3 ng μL-1 has been performed based on the antibody-antigen recognition.

  2. Multichannel Spectroscopic Ellipsometry for CdTe Photovoltaics: from Materials and Interfaces to Solar Cells

    Science.gov (United States)

    Koirala, Prakash

    Spectroscopic ellipsometry (SE) in the mid-infrared to ultraviolet range has been implemented in order to develop and evaluate optimization procedures for CdTe solar cells at the different stages of fabrication. In this dissertation research, real time SE (RT-SE) has been applied during the fabrication of the as-deposited CdS/CdTe solar cell. Two areas of background research were addressed before undertaking the challenging RT-SE analysis procedures. First, optical functions were parameterized versus temperature for the glass substrate and its overlayers, including three different SnO2 layers. This database has applications not only for RT-SE analysis but also for on-line monitoring of the coated glass itself at elevated temperature. Second, post-deposition modifications of substrate have been studied by infrared spectroscopic ellipsometry (IR-SE) prior to the RT-SE analysis in order to evaluate the need for such modification in the analysis. With support from these background studies, RT-SE has been implemented in analyses of the evolution of the thin film structural properties during sputter deposition of polycrystalline CdS/CdTe solar cells on the transparent conducting oxide (TCO) coated glass substrates. The real time optical spectra collected during CdS/CdTe deposition were analyzed using the optical property database for all substrate components as a function of measurement temperature. RT-SE enables characterization of the filling process of the surface roughness modulations on the top-most SnO2 substrate layer, commonly referred to as the high resistivity transparent (HRT) layer. In this filling process, the optical properties of this surface layer are modified in accordance with an effective medium theory. In addition to providing information on interface formation to the substrate during film growth, RT-SE also provides information on the bulk layer CdS growth, its surface roughness evolution, as well as overlying CdTe interface formation and bulk layer

  3. A framework for technological learning in the supply chain: A case study on CdTe photovoltaics

    International Nuclear Information System (INIS)

    Bergesen, Joseph D.; Suh, Sangwon

    2016-01-01

    Highlights: • A framework for technological learning in the supply chain is proposed. • This framework separates learning effects on value added and intermediate inputs. • Supply-chain learning can project both changing environmental impacts and costs. • Learning upstream in the supply chain can influence observed learning rates. • An example for CdTe photovoltaics illustrates how this framework can be implemented. - Abstract: Accounting for technological changes and innovation is important when assessing the implications of rapidly-developing greenhouse gas (GHG) mitigation technologies. Technological learning curves have been commonly used as a tool to understand technological change as a function of cumulative production. Traditional learning curve approaches, however, do not distinguish the direct and upstream, supply chain technological changes by which cost reductions are achieved. While recent advances in learning curves have focused on distinguishing the different physical and economic drivers of learning, forecasted technological changes have not been applied to estimate the potential changes in the environmental performance of a technology. This article illustrates how distinguishing the different effects of technological learning throughout the supply chain can help assess the changing costs, environmental impacts and natural resource implications of technologies as they develop. We propose a mathematical framework to distinguish the effects of learning on the direct inputs to a technology from the effects of learning on value added, and we incorporate those effects throughout the supply chain of a technology using a life cycle assessment (LCA) framework. An example for cadmium telluride (CdTe) photovoltaics (PV) illustrates how the proposed framework can be implemented. Results show that that life cycle GHG emissions can decrease at least 40% and costs can decrease at least 50% as cumulative production of CdTe reaches 100 GW. Technological

  4. Dose and time effect of CdTe quantum dots on antioxidant capacities of the liver and kidneys in mice

    Directory of Open Access Journals (Sweden)

    Wang J

    2017-09-01

    Full Text Available Jilong Wang,1,2,* Hubo Sun,1,2,* Peijun Meng,1,2 Mengmeng Wang,1,2 Mi Tian,3 Yamin Xiong,1,2 Xueying Zhang,1,2 Peili Huang1,2 1School of Public Health, Capital Medical University, 2Beijing Key Laboratory of Environmental Toxicology, 3Medical Experiment and Test Center, Capital Medical University, Beijing, People’s Republic of China *These authors contributed equally to this work Abstract: Although quantum dot (QD-induced toxicity occurs due to free radicals, generation of oxidative stress mediated by reactive oxygen species (ROS formation is considered an important mechanism. However, free radical mechanisms are essentially difficult to elucidate at the molecular level because most biologically relevant free radicals are highly reactive and short-lived, making them difficult to directly detect, especially in vivo. Antioxidants play an important role in preventing or, in most cases, limiting the damage caused by ROS. Healthy people and animals possess many endogenous antioxidative substances that scavenge free radicals in vivo to maintain the redox balance and genome integrity. The antioxidant capacity of an organism is highly important but seldom studied. In this study, the dose and time effects of CdTe QDs on the antioxidant capacities of the liver and kidneys were investigated in mice using the electron paramagnetic resonance (EPR spin-trapping technique. We found that the liver and kidneys of healthy mice contain specific antioxidant capacities that scavenge ·OH and ·O2-. Furthermore, oxidative stress markers (superoxide dismutase [SOD], catalase [CAT], glutathione peroxidase [GPx], glutathione [GSH] and malondialdehyde [MDA] were examined. In dose course studies, the free radical scavenging efficiencies of the liver and kidneys were found to gradually decrease with increasing concentration of CdTe QD exposure. The activities and levels of SOD, CAT, GPx and MDA were observed to increase in treated groups, whereas those of GSH were reduced

  5. Study of unfolding methods for X-ray spectra obtained with CDTE detectors in the mammography energy range

    Energy Technology Data Exchange (ETDEWEB)

    Querol, A.; Gallardo, S.; Rodenas, J.; Verdu, G.; Barrachina, T. [Departamento de Ingenieria Quimica y Nuclear, Universidad Politecnica de Valencia, Cami de Vera, s/n 46022 Valencia (Spain)

    2010-07-01

    Quality control parameters for an X-ray tube strongly depend on the accurate knowledge of the primary spectrum, but it is difficult to obtain it experimentally by direct measurements. Indirect spectrometry techniques such as Compton scattering can be used in X-ray spectrum assessment avoiding the pile-up effect in detectors. However, an unfolding method is required for this kind of measurements. In previous works, a methodology to assess primary X-ray spectra in the diagnostic energy range by means of the Compton scattering technique has been analysed. This methodology included a Monte Carlo simulation model, using the MCNP5 code, of the actual experimental set-up providing a Pulse Height Distribution (PHD) for a given primary spectrum. It reproduced the interaction of photons and electrons with the Compton spectrometer and with a High Purity Germanium detector. In this work, a CdTe detector is proposed instead of the HP Germanium. CdTe detector does not require a liquid nitrogen cooling system, but its resolution is poor for the same energy range and its efficiency comes down for energies greater than 55 keV being 70% at 90 keV. In despite of these disadvantages, CdTe detector has been considered due to its low cost and easy handling and portability. The model can provide a PHD and a Response Matrix, for different X-ray spectra, taken from the IPEM 78 catalogue. The primary spectrum can be estimated applying the MTSVD (Modified Truncated Singular Value Decomposition) and the Tikhonov unfolding method. Both unfolding methods cause some loss of information on the reconstructed primary spectra. In this paper, a comparison of the ability to obtain primary spectra using both MTSVD and Tikhonov unfolding methods has been done. As well a sensitivity analysis in order to test the proposed unfolding methods when they are applied to PHDs obtained with the MCNP model has been developed. A variation on parameters such as target materials and voltages over the mammography

  6. Size and density repartition of dislocation loops created by electron irradiation in CdTe. Sur l'origine des inhomogeneites de taille et de concentration des boucles de dislocation creees par irradiation electronique dans le CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Gue, A.M.; Esteve, D.; Idrissi-Saba, H. (L.A.A.S., 31 Toulouse (FR)); Djafari-Rouhani, M. (Toulouse-3 Univ., 31 (FR))

    1991-01-01

    The chemical reaction rate theory has been developed in order to describe the dynamics of electron irradiation damage in CdTe. The surface effects have been taken into account through the diffusion of interstitials towards the surfaces. This model shows that, due to the surface effects, interstitial, vacancy and dislocation loop concentrations exhibit a gradient normal to the foil. For the same reason, the loop size is distributed around a mean value. The interstitial recombination rate on dislocation loops has been calculated and it has been shown that interstitial diffusion towards the loops is likely to occur. As a consequence, a density gradient is generated around the loop and modifies the growth dynamics.

  7. Processing of CdTe thin films by the stacked elemental layer method. Compound formation and physical properties

    Energy Technology Data Exchange (ETDEWEB)

    Cruz, L.R. [Departamento de Engenharia, Macanica e de Materiais, Instituto Militar de Engenharia, Praca General Tiburcio, 80, Urca, 22290-270 RJ Rio de Janeiro (Brazil); Matson, R. [National Renewable Energy Laboratory, 1617 Cole Boulevard, 80401 Golden, CO (United States); De Avillez, R.R. [Pontificia Universidade Catolica, Rua Marques de Sao Vicente, 225, Gavea, 22543-900 RJ Rio de Janeiro (Brazil)

    2001-01-01

    Cadmium telluride (CdTe) thin films have been deposited using the stacked elemental layer (SEL) technique. This process consists of sequentially depositing tellurium and cadmium layers and then annealing the stacks in order to synthesize the compound. The films were characterized using X-ray diffraction (XRD), optical transmittance and reflectance, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The evolution of the thin film reaction and compound formation were studied using X-ray data. The results show that the growth is diffusion-controlled and the activation energy is (82{+-}2) kJ/mol. The effect of the conventional post-synthesis CdCl{sub 2} heat treatment on the physical properties of the films produced is also reported.

  8. Simultaneous shunt protection and back contact formation for CdTe solar cells with single wall carbon nanotube layers

    Science.gov (United States)

    Phillips, Adam B.; Khanal, Rajendra R.; Song, Zhaoning; Watthage, Suneth C.; Kormanyos, Kenneth R.; Heben, Michael J.

    2015-12-01

    Thin film photovoltaic (PV) devices and modules prepared by commercial processes can be severely compromised by through-device low resistance electrical pathways. The defects can be due to thin or missing semiconductor material, metal diffusion along grain boundaries, or areas containing diodes with low turn-on potentials. We report the use of single wall carbon nanotube (SWCNT) layers to enable both protection against these defects and back contact formation for CdTe PV devices. Samples prepared with a SWCNT back contact exhibited good efficiency and did not require shunt protection, while devices prepared without shunt protection using a standard metal back contact performed poorly. We describe the mechanism by which the SWCNT layer functions. In addition to avoiding the need for shunt protection by other means, the SWCNT film also provides a route to higher short circuit currents.

  9. A pH dependence study of CdTe quantum dots fluorescence quantum yields using eclipsing thermal lens spectroscopy

    International Nuclear Information System (INIS)

    Estupiñán-López, C.; Dominguez, C. Tolentino; Filho, P.E. Cabral; Santos, B.S.; Fontes, A.; Araujo, R.E. de

    2016-01-01

    In this study we evaluated the absolute fluorescence quantum yield (Φ) of hydrophilic CdTe QDs in function of different pHs, modified from the alkaline to acid, by using two different chemicals compounds, the mercaptosuccinic acid (MSA-the stabilizing agent of the QDs synthesis) or hydrochloric acid (HCl). The pH control of QDs suspensions is essential for the use of fluorescent nanoparticles in biological systems. We used the eclipsing thermal lens spectroscopy technique to determine the absolute fluorescence quantum yield values. The results showed variations on the Φ values as a function of the pH, which allowed a better understanding of QDs emission characteristics, establishing parameters for their use in biomedical applications such as optical images of biological systems, immunoassays, flow cytometry, biosensors and others.

  10. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

    CERN Document Server

    Eisen, Y; Mardor, I

    1999-01-01

    CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used pla...

  11. Controlling of hydrogen and oxygen atoms in CdTe by means of far-infrared spectroscopy using synchrotron radiation

    International Nuclear Information System (INIS)

    Cebulski, J.; Sheregii, E.M.; Polit, J.; Marcelli, A.; Robouch, B.; Castelli Gudi, M.; Piccinini, M.; Kisiel, A.

    2007-01-01

    The work presents far-and middle-infrared reflectivity spectra collected with synchrotron radiation on specially prepared CdTe-monocrystals in the temperature region of 30-300 K. The investigated samples were of three different types characterized by the three different levels of hydrogenation - strong, middle and the low ones. In order to interpret the experimental data, the imaginary part of the dielectric function was evaluated by means of Kramers-Kronig transformation. To determine quantitatively the influence of hydrogen atoms on the phonon and vibrational spectra of hydrogenated CdTe crystals we used the special statistical model proposed in this paper. This model takes into account the tetrahedron as the basic structural unit and distinguishes the contribution of the hydrogen bearing tetrahedra from the contribution of the hydrogen free ones to the crystal phonon spectra. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Biocompatible fluorescence-enhanced ZrO2-CdTe quantum dot nanocomposite for in vitro cell imaging

    Science.gov (United States)

    Lu, Zhisong; Zhu, Zhihong; Zheng, Xinting; Qiao, Yan; Guo, Jun; Li, Chang Ming

    2011-04-01

    With advances of quantum dots (QDs) in bioimaging applications, various materials have been used to coat QDs to reduce their nanotoxicity; however, the coating could introduce new toxic sources and quench the fluorescence in bioimaging applications. In this work, ZrO2, an excellent ceramic material with low extinction coefficient and good biocompatibility, is utilized to coat CdTe QDs for the first time. Experimental results show that ZrO2-QD nanocomposites with the size of ~ 30 nm possess enhanced fluorescence emission, lower nanotoxicity and gradually increased fluorescence under 350 nm light illumination. After functionalization with folic acid, they were applied to label cultured HeLa cells effectively. Therefore, the ZrO2-QD nanocomposites could be promising biocompatible nanomaterials with strong fluorescence emission to replace or complement QDs in biomedical applications.

  13. Biocompatible fluorescence-enhanced ZrO2-CdTe quantum dot nanocomposite for in vitro cell imaging

    International Nuclear Information System (INIS)

    Lu Zhisong; Zhu Zhihong; Zheng Xinting; Qiao Yan; Li Changming; Guo Jun

    2011-01-01

    With advances of quantum dots (QDs) in bioimaging applications, various materials have been used to coat QDs to reduce their nanotoxicity; however, the coating could introduce new toxic sources and quench the fluorescence in bioimaging applications. In this work, ZrO 2 , an excellent ceramic material with low extinction coefficient and good biocompatibility, is utilized to coat CdTe QDs for the first time. Experimental results show that ZrO 2 -QD nanocomposites with the size of ∼ 30 nm possess enhanced fluorescence emission, lower nanotoxicity and gradually increased fluorescence under 350 nm light illumination. After functionalization with folic acid, they were applied to label cultured HeLa cells effectively. Therefore, the ZrO 2 -QD nanocomposites could be promising biocompatible nanomaterials with strong fluorescence emission to replace or complement QDs in biomedical applications.

  14. Biocompatible fluorescence-enhanced ZrO{sub 2}-CdTe quantum dot nanocomposite for in vitro cell imaging

    Energy Technology Data Exchange (ETDEWEB)

    Lu Zhisong; Zhu Zhihong; Zheng Xinting; Qiao Yan; Li Changming [School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, 637457 (Singapore); Guo Jun, E-mail: ecmli@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, 639798 (Singapore)

    2011-04-15

    With advances of quantum dots (QDs) in bioimaging applications, various materials have been used to coat QDs to reduce their nanotoxicity; however, the coating could introduce new toxic sources and quench the fluorescence in bioimaging applications. In this work, ZrO{sub 2}, an excellent ceramic material with low extinction coefficient and good biocompatibility, is utilized to coat CdTe QDs for the first time. Experimental results show that ZrO{sub 2}-QD nanocomposites with the size of {approx} 30 nm possess enhanced fluorescence emission, lower nanotoxicity and gradually increased fluorescence under 350 nm light illumination. After functionalization with folic acid, they were applied to label cultured HeLa cells effectively. Therefore, the ZrO{sub 2}-QD nanocomposites could be promising biocompatible nanomaterials with strong fluorescence emission to replace or complement QDs in biomedical applications.

  15. Comparison of CdS films deposited by different techniques: Effects on CdTe solar cell

    International Nuclear Information System (INIS)

    Lee, Jaehyeong

    2005-01-01

    Polycrystalline cadmium sulfide (CdS) thin-films were deposited on glass substrate by chemical bath deposition (CBD) and vacuum evaporation (VE) techniques. VE-CdS films consisted primarily of hexagonal phase, whereas CBD CdS films containing primarily the cubic form. VE-grown films were shown to have better crystallinity than CBD-grown films. The grain size of the CBD films is smaller than the ones of VE films. VE-CdS films exhibited relatively high transmittance in the above-gap region and band gap compared with CBD films. However, CdTe solar cells with these low quality CBD-CdS layers yield higher and more stable characteristics. Current-voltage-temperature measurements showed that the current transport for both cells was controlled by both tunneling and interface recombination but the cells with CBD-CdS displayed less tunneling

  16. High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Annual Technical Report, 4 March 1999 - 3 March 2000

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A. D.; Deng, X.; Bohn, R. G. (The University of Toledo)

    2001-08-29

    This report describes the research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Implemented a diode-array spectrograph system and used optical emission spectroscopy to help optimize the reactive sputtering of N-doped ZnTe for CdTe back-contact structures. Identified the photoluminescence signatures of various defect states in CdTe related to Cd vacancies, CuCd acceptors, Cu-VCd complexes, and donor-acceptor pairs, and related these states to instabilities in the hole concentration at room temperature. Showed that Cu is an important non-radiative center in CdS, reducing the PL efficiency. Studied band tailing in CdS weakly alloyed with CdTe and CdTe weakly alloyed with CdS. Fabricated superstrate ITO/CdS/CdTe cells on Mo substrates with efficiencies above 7.5%. Collaborated in studies of EXAFS of Cu in CdTe which indicate a Cu-Te bond length of 2.62 {angstrom} or 6.7% shorter than the CdTe, bond in agreement with calculations of Wei et al. Provided assistance to two groups on laser scribing. Comparatively studied the performance of a-SiGe solar cells and properties of a-SiGe single-layer films deposited using a wide range of H dilution, observed transition from a-SiGe to {mu}c-SiGe at high H dilution and the impact on cell performances. Comparatively studied the performance of a-SiGe solar cells and properties of a-SiGe single-layer films with different Ge contents, suitable for use as component cells of triple-junction devices. Fabricated a-Si-based solar cells on ultra-thin stainless-steel substrate (7.5 micron) and obtained equivalent performance and yield as on the regular SS substrates (127 microns). Comparatively studied the performance of a-Si-based solar cells on SS substrates and on SnO2-coated glass substrates. Studied the performance of p-layers deposited under various deposition conditions for n-i-p type solar cells. Performed an analysis for the component cell current-matching within a

  17. High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Annual Technical Report, 4 March 1999 - 3 March 2000; ANNUAL

    International Nuclear Information System (INIS)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2001-01-01

    This report describes the research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Implemented a diode-array spectrograph system and used optical emission spectroscopy to help optimize the reactive sputtering of N-doped ZnTe for CdTe back-contact structures. Identified the photoluminescence signatures of various defect states in CdTe related to Cd vacancies, CuCd acceptors, Cu-VCd complexes, and donor-acceptor pairs, and related these states to instabilities in the hole concentration at room temperature. Showed that Cu is an important non-radiative center in CdS, reducing the PL efficiency. Studied band tailing in CdS weakly alloyed with CdTe and CdTe weakly alloyed with CdS. Fabricated superstrate ITO/CdS/CdTe cells on Mo substrates with efficiencies above 7.5%. Collaborated in studies of EXAFS of Cu in CdTe which indicate a Cu-Te bond length of 2.62(angstrom) or 6.7% shorter than the CdTe, bond in agreement with calculations of Wei et al. Provided assistance to two groups on laser scribing. Comparatively studied the performance of a-SiGe solar cells and properties of a-SiGe single-layer films deposited using a wide range of H dilution, observed transition from a-SiGe to(mu)c-SiGe at high H dilution and the impact on cell performances. Comparatively studied the performance of a-SiGe solar cells and properties of a-SiGe single-layer films with different Ge contents, suitable for use as component cells of triple-junction devices. Fabricated a-Si-based solar cells on ultra-thin stainless-steel substrate (7.5 micron) and obtained equivalent performance and yield as on the regular SS substrates (127 microns). Comparatively studied the performance of a-Si-based solar cells on SS substrates and on SnO2-coated glass substrates. Studied the performance of p-layers deposited under various deposition conditions for n-i-p type solar cells. Performed an analysis for the component cell current-matching within a triple

  18. Preparation and characterization of pulsed laser deposited a novel CdS/CdSe composite window layer for CdTe thin film solar cell

    International Nuclear Information System (INIS)

    Yang, Xiaoyan; Liu, Bo; Li, Bing; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

    2016-01-01

    Highlights: • Novel CdS/CdSe composite windows for CdTe cell were prepared by pulsed laser deposition. • SEM images show that CdS/CdSe composite windows are stacking together as the design. • CdTe cells with CdS/CdSe composite windows improved the blue response. • CdTe cells with composite windows show an obvious red shift in the absorption edge. • The volume proportion of CdSe affects the performance of CdTe solar cell. - Abstract: A novel CdS/CdSe composite window structure was designed and then the corresponding films were prepared by pulsed laser deposition as an improved window layer for CdTe-based solar cells. Two types of this composite window structure with 5 cycles and 10 cycles CdS/CdSe respectively both combined with CdS layers were prepared at 200 °C compared with pure CdS window layer and finally were applied into CdTe thin film solar cells. The cross section and surface morphology of the two composite window layers were monitored by using scanning electron microscopy and the result shows that the pulsed laser deposited composite window layers with good crystallinity are stacking together as the design. The devices based on CdS/CdSe composite window layers have demonstrated the enhanced photocurrent collection from both short and long wavelength regions compared to CdS/CdTe solar cell. The efficiency of the best reference CdS/CdTe solar cell was 10.72%. And the device with 5 cycles CdS/CdSe composite window showed efficiency of 12.61% with V OC of 772.92 mV, J SC of 25.11 mA/cm 2 and FF of 64.95%. In addition, there are some differences which exist within the optical transmittance spectra and QE curves between the two CdS/CdSe composite window samples, indicating that the volume proportion of CdSe may influence the performance of CdTe thin film solar cell.

  19. Preparation and characterization of pulsed laser deposited a novel CdS/CdSe composite window layer for CdTe thin film solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Xiaoyan; Liu, Bo; Li, Bing, E-mail: libing70@126.com; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

    2016-03-30

    Highlights: • Novel CdS/CdSe composite windows for CdTe cell were prepared by pulsed laser deposition. • SEM images show that CdS/CdSe composite windows are stacking together as the design. • CdTe cells with CdS/CdSe composite windows improved the blue response. • CdTe cells with composite windows show an obvious red shift in the absorption edge. • The volume proportion of CdSe affects the performance of CdTe solar cell. - Abstract: A novel CdS/CdSe composite window structure was designed and then the corresponding films were prepared by pulsed laser deposition as an improved window layer for CdTe-based solar cells. Two types of this composite window structure with 5 cycles and 10 cycles CdS/CdSe respectively both combined with CdS layers were prepared at 200 °C compared with pure CdS window layer and finally were applied into CdTe thin film solar cells. The cross section and surface morphology of the two composite window layers were monitored by using scanning electron microscopy and the result shows that the pulsed laser deposited composite window layers with good crystallinity are stacking together as the design. The devices based on CdS/CdSe composite window layers have demonstrated the enhanced photocurrent collection from both short and long wavelength regions compared to CdS/CdTe solar cell. The efficiency of the best reference CdS/CdTe solar cell was 10.72%. And the device with 5 cycles CdS/CdSe composite window showed efficiency of 12.61% with V{sub OC} of 772.92 mV, J{sub SC} of 25.11 mA/cm{sup 2} and FF of 64.95%. In addition, there are some differences which exist within the optical transmittance spectra and QE curves between the two CdS/CdSe composite window samples, indicating that the volume proportion of CdSe may influence the performance of CdTe thin film solar cell.

  20. Characterization of paraffin based breast tissue equivalent phantom using a CdTe detector pulse height analysis.

    Science.gov (United States)

    Cubukcu, Solen; Yücel, Haluk

    2016-12-01

    In this study, paraffin was selected as a base material and mixed with different amounts of CaSO 4 ·2H 2 O and H 3 BO 3 compounds in order to mimic breast tissue. Slab phantoms were produced with suitable mixture ratios of the additives in the melted paraffin. Subsequently, these were characterized in terms of first half-value layer (HVL) in the mammographic X-ray range using a pulse-height spectroscopic analysis with a CdTe detector. Irradiations were performed in the energy range of 23-35 kV p under broad beam conditions from Mo/Mo and Mo/Rh target/filter combinations. X-ray spectra were acquired with a CdTe detector without and with phantom material interposition in increments of 1 cm thickness and then evaluated to obtain the transmission data. The net integral areas of the spectra for the slabs were used to plot the transmission curves and these curves were fitted to the Archer model function. The results obtained for the slabs were compared with those of standard mammographic phantoms such as CIRS BR series phantoms and polymethylmethacrylate plates (PMMA). From the evaluated transmission curves, the mass attenuation coefficients and HVLs of some mixtures are close to those of the commercially available standard mammography phantoms. Results indicated that when a suitable proportion of H 3 BO 3 and CaSO 4 ·2H 2 O is added to the paraffin, the resulting material may be a good candidate for a breast tissue equivalent phantom.

  1. Diffusion of Cd and Te adatoms on CdTe(111 surfaces: A computational study using density functional theory

    Directory of Open Access Journals (Sweden)

    Ebadollah Naderi

    2015-01-01

    Full Text Available CdTe is one of the most promising semiconductor for thin-film based solar cells. Here we report a computational study of Cd and Te adatom diffusion on the CdTe (111 A-type (Cd terminated and B-type (Te terminated surfaces and their migration paths. The atomic and electronic structure calculations are performed under the DFT formalism and climbing Nudge Elastic Band (cNEB method has been applied to evaluate the potential barrier of the Te and Cd diffusion. In general the minimum energy site on the surface is labeled as Aa site. In case of Te and Cd on B-type surface, the sub-surface site (a site just below the top surface is very close in energy to the A site. This is responsible for the subsurface accumulation of adatoms and therefore, expected to influence the defect formation during growth. The diffusion process of adatoms is considered from Aa (occupied to Aa (empty site at the nearest distance. We have explored three possible migration paths for the adatom diffusion. The adatom surface interaction is highly dependent on the type of the surface. Typically, Te interaction with both type (5.2 eV for A-type and 3.8 eV for B-type is stronger than Cd interactions(2.4 eV for B-type and 0.39 eV for A-type. Cd interaction with the A-type surface is very weak. The distinct behavior of the A-type and B-type surfaces perceived in our study explain the need of maintaining the A-type surface during growth for smooth and stoichiometric growth.

  2. Novel {beta}-cyclodextrin modified CdTe quantum dots as fluorescence nanosensor for acetylsalicylic acid and metabolites

    Energy Technology Data Exchange (ETDEWEB)

    Algarra, M. [Centro de Geologia do Porto, Faculdade de Ciencias, Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto (Portugal); Campos, B.B.; Aguiar, F.R.; Rodriguez-Borges, J.E. [Centro de Investigacao em Quimica (CIQ-UP), Faculdade de Ciencias da Universidade do Porto, Rua do Campo Alegre 687, 169-007 Porto (Portugal); Esteves da Silva, J.C.G., E-mail: jcsilva@fc.up.pt [Centro de Investigacao em Quimica (CIQ-UP), Faculdade de Ciencias da Universidade do Porto, Rua do Campo Alegre 687, 169-007 Porto (Portugal)

    2012-05-01

    {beta}-Cyclodextrin was modified with 11-[(ethoxycarbonyl)thio]undecanoic acid and used as a capping agent, together with mercaptosuccinic acid, to prepare water-stable CdTe quantum dots. The water soluble quantum dot obtained displays fluorescence with a maximum emission at 425 nm (under excitation at 300 nm) with lifetimes of 0.53, 4.8, 181, and 44.1 ns, respectively. The S-{beta}CD-MSA-CdTe can act as a nanoprobe that is due to the affinity of the cyclodextrin moiety for selected substances such as acetylsalicylic acid (ASA) and its metabolites as foreign species. The fluorescence of the S-{beta}CD-MSA-CdTe is enhanced on addition of ASA. Linear calibration plots are observed with ASA in concentrations between 0 and 1 mg/l, with a limit of detection at 8.5 Multiplication-Sign 10{sup -9} mol/l (1.5 ng/ml) and a precision as relative standard deviation of 1% (0.05 mg/l). The interference effect of certain compounds as ascorbic acid and its main metabolites such as salicylic, gentisic and salicyluric acid upon the obtained procedure was studied. Highlights: Black-Right-Pointing-Pointer Nanosensors constituted by CdTe quantum dots capped with modified cyclodextrin. Black-Right-Pointing-Pointer This nanomaterial shows fluorescence properties compatible with a semiconductor quantum dot. Black-Right-Pointing-Pointer The nanosensor shows fluorescence enhancement when inclusion complexes are formed with acetylsalicylic acid. Black-Right-Pointing-Pointer This nanomaterial has nanosensor potential taking into consideration the formation stability of the inclusion complex.

  3. Electrochemical Deposition of CdTe Semiconductor Thin Films for Solar Cell Application Using Two-Electrode and Three-Electrode Configurations: A Comparative Study

    Directory of Open Access Journals (Sweden)

    O. K. Echendu

    2016-01-01

    Full Text Available Thin films of CdTe semiconductor were electrochemically deposited using two-electrode and three-electrode configurations in potentiostatic mode for comparison. Cadmium sulphate and tellurium dioxide were used as cadmium and tellurium sources, respectively. The layers obtained using both configurations exhibit similar structural, optical, and electrical properties with no specific dependence on any particular electrode configuration used. These results indicate that electrochemical deposition (electrodeposition of CdTe and semiconductors in general can equally be carried out using two-electrode system as well as the conventional three-electrode system without compromising the essential qualities of the materials produced. The results also highlight the advantages of the two-electrode configuration in process simplification, cost reduction, and removal of a possible impurity source in the growth system, especially as the reference electrode ages.

  4. Development of a two-dimensional ASIC for hard X-ray spectroscopy and imaging with a CdTe pixel detector

    International Nuclear Information System (INIS)

    Hiruta, Tatsuro; Tamura, K.; Ikeda, H.; Nakazawa, K.; Takasima, T.; Takahashi, T.

    2006-01-01

    We are developing a two-dimensional analog ASIC for the readout of pixel sensors based on silicon (Si) or cadmium telluride (CdTe) for spectroscopic imaging observations in the X-ray and gamma-ray regions. The aim for the ASIC is to obtain a low-noise performance better than 100 electrons (rms) with self-triggering capabilities. As the first step of prototyping, we have fabricated several ASICs. We obtained an energy resolution of 5.4 keV (FWHM) for 81 keV gamma-rays from 133 Ba with a one-dimensional ASIC connected to a CdTe diode and also verified a readout architecture via a two-dimensional ASIC with 144 pixel channels. Based on the results obtained and experience gained through prototype ASICs, we are developing a 4096-channel two-dimensional analog ASIC

  5. Preparation and purification of L-cysteine capped CdTe quantum dots and its self-recovery of degenerate fluorescence

    International Nuclear Information System (INIS)

    Li Mengying; Zhou Huameng; Zhang Hongyan; Sun Pan; Yi Kuiyu; Wang Meng; Dong Zaizheng; Xu Shukun

    2010-01-01

    L-cysteine capped CdTe quantum dots (QDs) were prepared in aqueous solution by a simple and efficient method, showing many advantages such as short synthesis period, the broaden range of starting pH value and the wide fluorescence emission wavelength range. A novel purification process was designed to remove excess Cd 2+ which has potential cytotoxicity for bio-analysis. Three-dimensional fluorescence charts of pre- and post-purification showed that the purified QDs were of better luminescent performance. The prepared QDs were of cubic crystal structure with an average size of 2-6 nm, which were characterized by XRD and HRTEM. It is confirmed by IR spectra that the L-cysteine ligands were conjugated with CdTe cores via covalent bond. The degenerate fluorescence of QDs can be self-recovered in the presence of L-cysteine without other processing steps.

  6. Concentration-dependent optical properties of TGA stabilized CdTe Quantum dots synthesized via the single injection hydrothermal method in the ambient environment

    Science.gov (United States)

    Jai Kumar, B.; Mahesh, H. M.

    2017-04-01

    Thioglycolic acid (TGA) stabilized aqueous CdTe Quantum dots (QDs) were synthesized using a facile, cost efficient Single Injection Hydrothermal (SIH) method. The complete preparation of precursors and growth of QDs was carried out in the ambient environment without inter gas protection. The Cadmium and Tellurium precursors were prepared from cadmium nitrate and elemental tellurium powder with sodium borohydride as reducing agent respectively. A systematic investigation was carried out in order to study the effect of 0.04M and 0.08M TGA concentration on ease synthesis, stability and size-tunable optical absorbance, bandgap, photoluminescence (PL) and Quantum yield (QY) of CdTe QDs. The Structure of QDs was verified by XRD and optical properties by absorbance and PL spectra. Experimental results revealed that the 0.08M TGA QDs possess good chemical and optical stability with high luminescence and decent QY, ready to use in optoelectronics, photovoltaic and biological application.

  7. Exploring the influence of MPA-capped CdTe quantum dots on the structure and function of lysozyme probing by spectroscopic and calorimetric methods.

    Science.gov (United States)

    Zhao, Lining; Sun, Tao; Zhang, Xun; Song, Wei; Liu, Rutao

    2017-07-01

    The effect of 3-mercaptopropionic acid (MPA)-capped CdTe quantum dots (QDs) on lysozyme was systematically investigated by spectroscopic methods, enzyme activity assay, and calorimetry techniques. Results show that the MPA-capped CdTe QDs binded to lysozyme through van der Walls forces and hydrogen bondings, causing the decrement of α-helical content (∼7%) and increment of β-sheet content (∼11%) of lysozyme. The binding caused static quenching of the fluorescence, while the microenvironment of aromatic amino acid residues did not show any significant alteration. The lysozyme activity was affected by the increasing exposure of QDs, it was inhibited to 53.77% under a 6 × 10 -7  M exposure compared with the control group. This work will provide direct evidence about enzyme toxicity of QDs to lysozyme in vitro. © 2017 Wiley Periodicals, Inc.

  8. Study and development of new CdTe and CdZnTe detection structures for X and {gamma} imagery; Etude et realisation de nouvelles structures de detection a base de CdTe et CdZnTe pour l`imagerie X et {gamma}

    Energy Technology Data Exchange (ETDEWEB)

    Rosaz, M

    1997-10-24

    The aim of this study is to show the interest of applying cadmium telluride (CdTe) for X- and {gamma}- ray imaging applications, with specific technological (via contact nature) and geometric (via Frisch grids) structures suited for each application. This work is divided into three different but complementary parts: the first part describes a simulation model which allows a better understanding of CdTe based {gamma}- ray detectors. The new feature of this model compared to previous ones, is that it is able to take into account the electric field`s non uniform spatial distribution inside the detector s. The results enable us to de-convolute the influence of material and contact parameters on the spectrometric performances (energy resolution and peak/valley ratio) of CdTe based detectors; the second part presents different technological structures deposited upon CdTe, (grown by two different methods, i.e Bridgman and High Pressure Bridgman). These structures were characterised in X- and {gamma}- ray detection; theoretical models are developed which allow a certain insight into the detection properties of each couple (material + contact); the third part deals with new contact geometries which allow a screening effect of the bulk (analogous to the Frisch grid effect in gaseous detectors) resulting in improved energy resolution and peak/valley ratios; encouraging first results on prototypes are presented and discussed. This work has allowed a better understanding of physical behaviour of CdTe based detectors, coupled with advances in technological issues to upgrade the overall performances of these detectors for application in X- and {gamma}- ray imaging. (author) 93 refs.

  9. Various types of semiconductor photocatalysts modified by CdTe QDs and Pt NPs for toluene photooxidation in the gas phase under visible light

    Energy Technology Data Exchange (ETDEWEB)

    Marchelek, M. [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland); Grabowska, E., E-mail: ewelina.grabowska@ug.edu.pl [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland); Klimczuk, T. [Department of Solid State Physics, Faculty of Applied Physics and Mathematics, Gdansk University of Technology, G. Narutowicza 11/12, 80-233 Gdansk (Poland); Lisowski, W. [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44-52, 01-224 Warsaw (Poland); Zaleska-Medynska, A. [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland)

    2017-01-30

    Highlights: • Novel semiconductors decorated by CdTe QDs and/or Pt NPs were synthesized. • Photodeposition and radiolysis is an effective method to obtaining Pt NPs. • CdTe decorated samples were prepared by absorption of QDs on matrix surface. • KTaO{sub 3}/CdTe-Pt{sub (R)} showed highest photocatalytic performance. • The enhanced performance was associated with electron trap mechanism. - Abstract: A novel synthesis process was used to prepare TiO{sub 2} microspheres, TiO{sub 2} P-25, SrTiO{sub 3} and KTaO{sub 3} decorated by CdTe QDs and/or Pt NPs. The effect of semiconductor matrix, presence of CdTe QDs and/or Pt NPs on the semiconductor surface as well as deposition technique of Pt NPs (photodeposition or radiolysis) on the photocatalytic activity were investigated. The as-prepared samples were characterized by X-ray powder diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) with energy-dispersive X-ray (EDX) spectroscopy, scanning electron microscopy (SEM), photoluminescence spectrometry (PL), Fourier transform infrared (FT-IR) and Raman spectra, diffuse reflectance spectroscopy (DRS) and BET surface area analysis. The photocatalytic decomposition of toluene in gas phase, activated by light-emitting diodes (LEDs), with the CdTe/Pt nanoparticles-modified TiO{sub 2} microspheres, P25, SrTiO{sub 3} and KTaO{sub 3} semiconductors was investigated under UV–vis and visible irradiation.The results showed that the photoactivity depends on semiconductor matrix. The highest photoactivity under Vis light was observed for KTaO{sub 3}/CdTe-Pt{sub (R)} sample (56% of toluene was decompose after 30 min of irradiation). The efficiency of the most active sample was 3 times higher than result for P25 and two times higher than for unmodified KTaO{sub 3}.

  10. High-efficiency aqueous-solution-processed hybrid solar cells based on P3HT dots and CdTe nanocrystals.

    Science.gov (United States)

    Yao, Shiyu; Chen, Zhaolai; Li, Fenghong; Xu, Bin; Song, Jiaxing; Yan, Lulin; Jin, Gan; Wen, Shanpeng; Wang, Chen; Yang, Bai; Tian, Wenjing

    2015-04-08

    Without using any environmentally hazardous organic solution, we fabricated hybrid solar cells (HSCs) based on the aqueous-solution-processed poly(3-hexylthiophene) (P3HT) dots and CdTe nanocrystals (NCs). As a novel aqueous donor material, the P3HT dots are prepared through a reprecipitation method and present an average diameter of 2.09 nm. When the P3HT dots are mixed with the aqueous CdTe NCs, the dependence of the device performance on the donor-acceptor ratio shows that the optimized ratio is 1:24. Specifically, the dependence of the device performance on the active-layer thermal annealing conditions is investigated. As a result, the optimized annealing temperature is 265 °C, and the incorporation of P3HT dots as donor materials successfully reduced the annealing time from 1 h to 10 min. In addition, the transmission electron microscopy and atomic force microscopy measurements demonstrate that the size of the CdTe NCs increased as the annealing time increased, and the annealing process facilitates the formation of a smoother interpenetrating network in the active layer. Therefore, charge separation and transport in the P3HT dots:CdTe NCs layer are more efficient. Eventually, the P3HT dots:CdTe NCs solar cells achieved 4.32% power conversion efficiency. The polymer dots and CdTe NCs based aqueous-solution-processed HSCs provide an effective way to avoid a long-time thermal annealing process of the P3HT dots:CdTe NCs layer and largely broaden the donor materials for aqueous HSCs.

  11. Characterization of L-cysteine capped CdTe quantum dots and application to test Cu(II) deficiency in biological samples from critically ill patients

    International Nuclear Information System (INIS)

    Sáez, Laura; Molina, Jorge; Florea, Daniela I.; Planells, Elena M.; Cabeza, M. Carmen; Quintero, Bartolomé

    2013-01-01

    Graphical abstract: -- Highlights: •We examinate stability of L-cysteine capped CdTe QD. •Factors influence QD fluorescence response are controlled. •Application in copper deficiency analysis is made. •We report comparison with other techniques. -- Abstract: The catalytic activity of copper ion gives, from the physiological point of view, a central role in many biological processes. Variations in the composition and location of cellular copper have been addressed given their physiological and pathological consequences. In this paper L-cysteine capped CdTe quantum dots is used for the fluorimetric determination of Cu(II) in biological samples from healthy individuals and patients admitted to the Intensive Care Units (ICU). An acceptable homogeneity in the CdTe QDs size has been obtained with an average value of 3 nm. No significant alterations in the spectral properties were observed for 2 months when stored in vacutainers at 6 °C and a concentration of approximately 2 μM. Data from oxidative stress markers such superoxide dismutase, total antioxidant capacity and DNA damage can be correlated with a Cu(II) deficiency for the ICU patients as measured by flame-atomic absorption spectroscopy (FAAS) and inductively coupled plasma source mass spectrometry (ICP-MS). Aqueous solutions 0.3 μM of L-cysteine capped CdTe QDs in MOPS buffer (6 mM, pH 7.4) used at 21 °C in the range 15–60 min after preparation of the sample for the measurements of fluorescence gives contents in Cu(II) for erythrocytes in good agreement with those obtained in FAAS and ICP-MS but the comparative ease of use makes the fluorimetric technique more suitable than the other two techniques for routine analysis

  12. Characterization of L-cysteine capped CdTe quantum dots and application to test Cu(II) deficiency in biological samples from critically ill patients

    Energy Technology Data Exchange (ETDEWEB)

    Sáez, Laura; Molina, Jorge; Florea, Daniela I.; Planells, Elena M. [Institute of Nutrition and Food Technology and Department of Physiology, Faculty of Pharmacy, Campus Cartuja, University of Granada, E-18071 Granada (Spain); Cabeza, M. Carmen [Department of Physical Chemistry, Faculty of Pharmacy, University of Granada, E-18071 Granada (Spain); Quintero, Bartolomé, E-mail: bqosso@ugr.es [Department of Physical Chemistry, Faculty of Pharmacy, University of Granada, E-18071 Granada (Spain)

    2013-06-27

    Graphical abstract: -- Highlights: •We examinate stability of L-cysteine capped CdTe QD. •Factors influence QD fluorescence response are controlled. •Application in copper deficiency analysis is made. •We report comparison with other techniques. -- Abstract: The catalytic activity of copper ion gives, from the physiological point of view, a central role in many biological processes. Variations in the composition and location of cellular copper have been addressed given their physiological and pathological consequences. In this paper L-cysteine capped CdTe quantum dots is used for the fluorimetric determination of Cu(II) in biological samples from healthy individuals and patients admitted to the Intensive Care Units (ICU). An acceptable homogeneity in the CdTe QDs size has been obtained with an average value of 3 nm. No significant alterations in the spectral properties were observed for 2 months when stored in vacutainers at 6 °C and a concentration of approximately 2 μM. Data from oxidative stress markers such superoxide dismutase, total antioxidant capacity and DNA damage can be correlated with a Cu(II) deficiency for the ICU patients as measured by flame-atomic absorption spectroscopy (FAAS) and inductively coupled plasma source mass spectrometry (ICP-MS). Aqueous solutions 0.3 μM of L-cysteine capped CdTe QDs in MOPS buffer (6 mM, pH 7.4) used at 21 °C in the range 15–60 min after preparation of the sample for the measurements of fluorescence gives contents in Cu(II) for erythrocytes in good agreement with those obtained in FAAS and ICP-MS but the comparative ease of use makes the fluorimetric technique more suitable than the other two techniques for routine analysis.

  13. The effects of high temperature processing on the structural and optical properties of oxygenated CdS window layers in CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Paudel, Naba R.; Grice, Corey R.; Xiao, Chuanxiao; Yan, Yanfa [Department of Physics and Astronomy, and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606 (United States)

    2014-07-28

    High efficiency CdTe solar cells typically use oxygenated CdS (CdS:O) window layers. We synthesize CdS:O window layers at room temperature (RT) and 270 °C using reactive sputtering. The band gaps of CdS:O layers deposited at RT increase when O{sub 2}/(O{sub 2} + Ar) ratios in the deposition chamber increase. On the other hand, the band gaps of CdS:O layers deposited at 270 °C decrease as the O{sub 2}/(O{sub 2} + Ar) ratios increase. Interestingly, however, our high temperature closed-space sublimation (CSS) processed CdTe solar cells using CdS:O window layers deposited at RT and 270 °C exhibit very similar cell performance, including similar short-circuit current densities. To understand the underlying reasons, CdS:O thin films deposited at RT and 270 °C are annealed at temperatures that simulate the CSS process of CdTe deposition. X-ray diffraction, atomic force microscopy, and UV-visible light absorption spectroscopy characterization of the annealed films reveals that the CdS:O films deposited at RT undergo grain regrowth and/or crystallization and exhibit reduced band gaps after the annealing. Our results suggest that CdS:O thin films deposited at RT and 270 °C should exhibit similar optical properties after the deposition of CdTe layers, explaining the similar cell performance.

  14. Impairments of spatial learning and memory following intrahippocampal injection in rats of 3-mercaptopropionic acid-modified CdTe quantum dots and molecular mechanisms.

    Science.gov (United States)

    Wu, Tianshu; He, Keyu; Ang, Shengjun; Ying, Jiali; Zhang, Shihan; Zhang, Ting; Xue, Yuying; Tang, Meng

    2016-01-01

    With the rapid development of nanotechnology, quantum dots (QDs) as advanced nanotechnology products have been widely used in neuroscience, including basic neurological studies and diagnosis or therapy for neurological disorders, due to their superior optical properties. In recent years, there has been intense concern regarding the toxicity of QDs, with a growing number of studies. However, knowledge of neurotoxic consequences of QDs applied in living organisms is lagging behind their development, even if several studies have attempted to evaluate the toxicity of QDs on neural cells. The aim of this study was to evaluate the adverse effects of intrahippocampal injection in rats of 3-mercaptopropionic acid (MPA)-modified CdTe QDs and underlying mechanisms. First of all, we observed impairments in learning efficiency and spatial memory in the MPA-modified CdTe QD-treated rats by using open-field and Y-maze tests, which could be attributed to pathological changes and disruption of ultrastructure of neurons and synapses in the hippocampus. In order to find the mechanisms causing these effects, transcriptome sequencing (RNA-seq), an advanced technology, was used to gain the potentially molecular targets of MPA-modified CdTe QDs. According to ample data from RNA-seq, we chose the signaling pathways of PI3K-Akt and MPAK-ERK to do a thorough investigation, because they play important roles in synaptic plasticity, long-term potentiation, and spatial memory. The data demonstrated that phosphorylated Akt (p-Akt), p-ERK1/2, and c-FOS signal transductions in the hippocampus of rats were involved in the mechanism underlying spatial learning and memory impairments caused by 3.5 nm MPA-modified CdTe QDs.

  15. CdTe and CdZnTe room-temperature X-ray and gamma ray detectors and imaging systems

    International Nuclear Information System (INIS)

    Eisen, Y.; Shor, A.

    1998-01-01

    CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as monolithic segmented arrays have been shown to be useful in imaging systems utilized in medical, research or industrial applications. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and they may lead to compact imaging systems or to imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by relatively low hole mobility-lifetime product and therefore continuing efforts are still underway to improve the characteristics of both CdTe and CdZnTe materials in order to achieve reproducible detectors with higher photopeak efficiencies for either low or high energy gamma rays. The paper is divided into three parts. The first part compares the characteristics of planar CdTe and CdZnTe single elements nuclear detectors containing metal contacts. Characteristics include: Charge collection efficiencies for both electrons and holes indicated by the mobility-lifetime product, energy resolutions, leakage currents and robustness in field use. The second part describes excellent spectroscopic results using a 1cm thick CdZnTe monolithic segmented pad detector array. This part also compares spectra for various gamma energies obtained by this segmented detector to that of a 1cm 3 detector acting as a single element planar detector. The third part discusses the characteristics of a new generation nuclear gamma camera for medical diagnostics based on room-temperature CdTe and CdZnTe spectrometers and its advantages over an Anger type scintillating nuclear camera

  16. CdTe Nanocrystal Hetero-Junction Solar Cells with High Open Circuit Voltage Based on Sb-doped TiO₂ Electron Acceptor Materials.

    Science.gov (United States)

    Li, Miaozi; Liu, Xinyan; Wen, Shiya; Liu, Songwei; Heng, Jingxuan; Qin, Donghuan; Hou, Lintao; Wu, Hongbin; Xu, Wei; Huang, Wenbo

    2017-05-03

    We propose Sb-doped TiO₂ as electron acceptor material for depleted CdTe nanocrystal (NC) hetero-junction solar cells. Novel devices with the architecture of FTO/ZnO/Sb:TiO₂/CdTe/Au based on CdTe NC and TiO₂ precursor are fabricated by rational ambient solution process. By introducing TiO₂ with dopant concentration, we are able to tailor the optoelectronic properties of NC solar cells. Our novel devices demonstrate a very high open circuit voltage of 0.74 V, which is the highest V oc reported for any CdTe NC based solar cells. The power conversion efficiency (PCE) of solar cells increases with the increase of Sb-doped content from 1% to 3%, then decreases almost linearly with further increase of Sb content due to the recombination effect. The champion device shows J sc , V oc , FF, and PCE of 14.65 mA/cm², 0.70 V, 34.44, and 3.53% respectively, which is prospective for solution processed NC solar cells with high V oc .

  17. Imaging performance comparison between a LaBr3: Ce scintillator based and a CdTe semiconductor based photon counting compact gamma camera.

    Science.gov (United States)

    Russo, P; Mettivier, G; Pani, R; Pellegrini, R; Cinti, M N; Bennati, P

    2009-04-01

    The authors report on the performance of two small field of view, compact gamma cameras working in single photon counting in planar imaging tests at 122 and 140 keV. The first camera is based on a LaBr3: Ce scintillator continuous crystal (49 x 49 x 5 mm3) assembled with a flat panel multianode photomultiplier tube with parallel readout. The second one belongs to the class of semiconductor hybrid pixel detectors, specifically, a CdTe pixel detector (14 x 14 x 1 mm3) with 256 x 256 square pixels and a pitch of 55 microm, read out by a CMOS single photon counting integrated circuit of the Medipix2 series. The scintillation camera was operated with selectable energy window while the CdTe camera was operated with a single low-energy detection threshold of about 20 keV, i.e., without energy discrimination. The detectors were coupled to pinhole or parallel-hole high-resolution collimators. The evaluation of their overall performance in basic imaging tasks is presented through measurements of their detection efficiency, intrinsic spatial resolution, noise, image SNR, and contrast recovery. The scintillation and CdTe cameras showed, respectively, detection efficiencies at 122 keV of 83% and 45%, intrinsic spatial resolutions of 0.9 mm and 75 microm, and total background noises of 40.5 and 1.6 cps. Imaging tests with high-resolution parallel-hole and pinhole collimators are also reported.

  18. CdTe quantum dots functionalized with 4-amino-2,2,6,6-tetramethylpiperidine-N-oxide as luminescent nanoprobe for the sensitive recognition of bromide ion

    International Nuclear Information System (INIS)

    Adegoke, Oluwasesan; Hosten, Eric; McCleland, Cedric; Nyokong, Tebello

    2012-01-01

    Graphical abstract: A bromide ion-selective modified nanoprobe sensor based on 4-amino-2,2,6,6-tetramethylpiperidine-N-oxide (4AT)-functionalized CdTe quantum dots (QDs-4AT) showed a high selectivity and sensitivity for the determination of bromide ion using fluorescence recovery. Highlights: ► Water soluble CdTe quantum dots interact with tetramethylpiperidine-N-oxide. ► Quantum dots fluorescence is quenched by the radical. ► In the presence of bromide ions the fluorescence is restored. ► The sensor is more selective to bromine ions than other common ions. - Abstract: A novel bromide ion-selective modified nanoprobe sensor based on 4-amino-2,2,6,6-tetramethylpiperidine-N-oxide (4AT)-functionalized CdTe quantum dots (QDs-4AT) has been developed. Fluorescence quenching of the QDs by 4AT was observed. The functionalized QDs-4AT nanoprobe allowed a highly sensitive determination of bromide ion via analyte-induced change in the photoluminescence (fluorescence recovery) of the modified QDs. A detection limit of 0.6 nM of bromide ion was obtained, while the interfering effect of other inorganic cations and anions was investigated to examine the selectivity of the nanoprobe. The linear range was between 0.01 and 0.13 μM. Combined fluorescence lifetime and electron paramagnetic resonance measurements confirmed electron transfer processes between bromide ion and QDs-4AT.

  19. Spectroscopic and microscopic investigation of MBE-grown CdTe (211)B epitaxial thin films on GaAs (211)B substrates

    Science.gov (United States)

    Özden, Selin; Koc, Mumin Mehmet

    2018-03-01

    CdTe epitaxial thin films, for use as a buffer layer for HgCdTe defectors, were grown on GaAs (211)B using the molecular beam epitaxy method. Wet chemical etching (Everson method) was applied to the epitaxial films using various concentrations and application times to quantify the crystal quality and dislocation density. Surface characterization of the epitaxial films was achieved using Atomic force microscopy and Scanning electron microscopy (SEM) before and after each treatment. The Energy Dispersive X-Ray apparatus of SEM was used to characterize the chemical composition. Untreated CdTe films show smooth surface characteristics with root mean square (RMS) roughnesses of 1.18-3.89 nm. The thicknesses of the CdTe layers formed were calculated via FTIR spectrometry and obtained by ex situ spectroscopic ellipsometry. Raman spectra were obtained for various temperatures. Etch pit densities (EPD) were measured, from which it could be seen that EPD changes between 1.7 × 108 and 9.2 × 108 cm-2 depending on the concentration of the Everson etch solution and treatment time. Structure, shape and depth of pits resulting from each etch pit implementation were also evaluated. Pit widths varying between 0.15 and 0.71 µm with heights varying between 2 and 80 nm were observed. RMS roughness was found to vary by anything from 1.56 to 26 nm.

  20. Understanding and managing health and environmental risks of CIS, CGS, and CdTe photovoltaic module production and use: A workshop

    Energy Technology Data Exchange (ETDEWEB)

    Moskowitz, P.D.; Zweibel, K.; DePhillips, M.P. [eds.

    1994-04-28

    Environmental, health and safety (EH&S) risks presented by CIS, CGS and CdTe photovoltaic module production, use and decommissioning have been reviewed and discussed by several authors. Several EH&S concerns exit. The estimated EH&S risks are based on extrapolations of toxicity, environmental mobility, and bioavailability data for other related inorganic compounds. Sparse data, however, are available for CIS, CGS or CdTe. In response to the increased interest in these materials, Brookhaven National Laboratory (BNL) has been engaged in a cooperative research program with the National Renewable Energy Laboratory (NREL), the Fraunhofer Institute for Solid State Technology (IFT), the Institute of Ecotoxicity of the GSF Forschungszentrum fair Umwelt und Gesundheit, and the National Institute of Environmental Health Sciences (NIEHS) to develop fundamental toxicological and environmental data for these three compounds. This workshop report describes the results of these studies and describes their potential implications with respect to the EH&S risks presented by CIS, CGS, and CdTe module production, use and decommissioning.

  1. Characterization of core/shell structures based on CdTe and GaAs nanocrystalline layers deposited on SnO2 microwires

    Science.gov (United States)

    Ghimpu, L.; Ursaki, V. V.; Pantazi, A.; Mesterca, R.; Brâncoveanu, O.; Shree, Sindu; Adelung, R.; Tiginyanu, I. M.; Enachescu, M.

    2018-04-01

    We report the fabrication and characterization of SnO2/CdTe and SnO2/GaAs core/shell microstructures. CdTe or GaAs shell layers were deposited by radio-frequency (RF) magnetron sputtering on core SnO2 microwires synthesized by a flame-based thermal oxidation method. The produced structures were characterized by scanning electron microscopy (SEM), high-resolution scanning transmission electron microscope (HR-STEM), X-ray diffraction (XRD), Raman scattering and FTIR spectroscopy. It was found that the SnO2 core is of the rutile type, while the shells are composed of CdTe or GaAs nanocrystallites of zincblende structure with the dimensions of crystallites in the range of 10-20 nm. The Raman scattering investigations demonstrated that the quality of the porous nanostructured shell is improved by annealing at temperatures of 420-450 °C. The prospects of implementing these microstructures in intrinsic type fiber optic sensors are discussed.

  2. Rational design of tetraphenylethylene-based luminescent down-shifting molecules: photophysical studies and photovoltaic applications in a CdTe solar cell from small to large units.

    Science.gov (United States)

    Li, Yilin; Li, Zhipeng; Ablekim, Tursunjan; Ren, Tianhui; Dong, Wen-Ji

    2014-12-21

    A rational design strategy of novel fluorophores for luminescent down-shifting (LDS) application was proposed and tested in this paper. Three new fluorophores (1a-c) with specific intramolecular charge transfer (ICT) and aggregation-induced emission (AIE) characteristics were synthesized as LDS molecules for increasing the output short circuit current density (Jsc) of a CdTe solar cell. Photophysical studies of their solution and solid states, and photovoltaic measurements of their PMMA solid films applied on a CdTe solar cell suggested that the specific spectroscopic properties and Jsc enhancement effects of these molecules were highly related to their chemical structures. The Jsc enhancement effects of these fluorophores were measured on both a CdTe small cell and a large panel. An increase in the output Jsc by as high as 5.69% for a small cell and 8.88% for a large panel was observed. Compared to a traditional LDS molecule, Y083, these fluorophores exhibited more superior capabilities of LDS.

  3. A new fluorimetric method for determination of valproic acid using TGA-capped CdTe quantum dots as proton sensor

    International Nuclear Information System (INIS)

    Sorouraddin, Mohammad-Hossein; Imani-Nabiyyi, Amin; Najibi-Gehraz, Seyed Ali; Rashidi, Mohammad-Reza

    2014-01-01

    Valproic acid (VA) is an acidic anticonvulsant and mood stabilizing drug with very weak fluorescence and absorption properties. A simple, inexpensive and sensitive method was established for determination of VA using thiogycolic acid (TGA)-capped CdTe quantum dots (QDs) based on pH-dependent fluorescence of the prepared QDs. The TGA-capped CdTe QDs of various sizes were successfully synthesized in aqueous medium and characterized by fluorescence spectroscopy, UV–vis absorption spectra, infrared spectroscopy and transmission electron microscopy (TEM). Under the optimal conditions, plotting ln(F 0 /F) versus concentration of VA showed a linear relationship in the range of 0.3–7.5 mg/L with correlation coefficient of 0.998. The limit of detection (LOD) was 0.24 µg mL −1 . The proposed method was successfully applied for determination of VA in commercial tablets, human serum, and urine samples satisfactorily. -- Highlights: • Development of a new simple and sensitive method for determination of valproic acid. • Based on pH-dependent fluorescence of thiogycolic acid-capped CdTe of the prepared quantum dots. • The first report of direct spectroscopic determination of VA with high sensitivity. • Capable of measuring VA in pharmaceutical and biological samples

  4. High-Efficiency Polycrystalline CdTe Thin-Film Solar Cells with an Oxygenated Amorphous CdS (a-CdS:O) Window Layer: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Wu, X.; Dhere, R. G.; Yan, Y.; Romero, M. J.; Zhang, Y.; Zhou, J.; DeHart, C.; Duda, A.; Perkins, C.; To, B.

    2002-05-01

    In the conventional CdS/CdTe device structure, the poly-CdS window layer has a bandgap of {approx}2.4 eV, which causes absorption in the short-wavelength region. Higher short-circuit current densities (Jsc) can be achieved by reducing the CdS thickness, but this can adversely impact device open-circuit voltage (Voc) and fill factor (FF). Also, poly-CdS film has about 10% lattice mismatch related to the CdTe film, which limits the improvement of device Voc and FF. In this paper, we report a novel window material: oxygenated amorphous CdS film (a-CdS:O) prepared at room temperature by rf sputtering. The a-CdS:O film has a higher optical bandgap (2.5-3.1 eV) than the poly-CdS film and an amorphous structure. The preliminary device results have demonstrated that Jsc of the CdTe device can be greatly improved while maintaining higher Voc and FF. We have fabricated a CdTe cell demonstrating an NREL-confirmed Jsc of 25.85 mA/cm2 and a total-area efficiency of 15.4%.

  5. Landfill waste and recycling: Use of a screening-level risk assessment tool for end-of-life cadmium telluride (CdTe) thin-film photovoltaic (PV) panels

    International Nuclear Information System (INIS)

    Cyrs, William D.; Avens, Heather J.; Capshaw, Zachary A.; Kingsbury, Robert A.; Sahmel, Jennifer; Tvermoes, Brooke E.

    2014-01-01

    Grid-connected solar photovoltaic (PV) power is currently one of the fastest growing power-generation technologies in the world. While PV technologies provide the environmental benefit of zero emissions during use, the use of heavy metals in thin-film PV cells raises important health and environmental concerns regarding the end-of-life disposal of PV panels. To date, there is no published quantitative assessment of the potential human health risk due to cadmium leaching from cadmium telluride (CdTe) PV panels disposed in a landfill. Thus, we used a screening-level risk assessment tool to estimate possible human health risk associated with disposal of CdTe panels into landfills. In addition, we conducted a literature review of potential cadmium release from the recycling process in order to contrast the potential health risks from PV panel disposal in landfills to those from PV panel recycling. Based on the results of our literature review, a meaningful risk comparison cannot be performed at this time. Based on the human health risk estimates generated for PV panel disposal, our assessment indicated that landfill disposal of CdTe panels does not pose a human health hazard at current production volumes, although our results pointed to the importance of CdTe PV panel end-of-life management. - Highlights: • Analysis of possible human health risk posed by disposal of CdTe panels into landfills. • Qualitative comparison of risks associated with landfill disposal and recycling of CdTe panels. • Landfill disposal of CdTe panels does not pose a human health hazard at current production volumes. • There could be potential risks associated with recycling if not properly managed. • Factors other than concerns over toxic substances will likely drive the decisions of how to manage end-of-life PV panels

  6. Photon-counting hexagonal pixel array CdTe detector: Spatial resolution characteristics for image-guided interventional applications

    Science.gov (United States)

    Shrestha, Suman; Karellas, Andrew; Shi, Linxi; Gounis, Matthew J.; Bellazzini, Ronaldo; Spandre, Gloria; Brez, Alessandro; Minuti, Massimo

    2016-01-01

    Purpose: High-resolution, photon-counting, energy-resolved detector with fast-framing capability can facilitate simultaneous acquisition of precontrast and postcontrast images for subtraction angiography without pixel registration artifacts and can facilitate high-resolution real-time imaging during image-guided interventions. Hence, this study was conducted to determine the spatial resolution characteristics of a hexagonal pixel array photon-counting cadmium telluride (CdTe) detector. Methods: A 650 μm thick CdTe Schottky photon-counting detector capable of concurrently acquiring up to two energy-windowed images was operated in a single energy-window mode to include photons of 10 keV or higher. The detector had hexagonal pixels with apothem of 30 μm resulting in pixel pitch of 60 and 51.96 μm along the two orthogonal directions. The detector was characterized at IEC-RQA5 spectral conditions. Linear response of the detector was determined over the air kerma rate relevant to image-guided interventional procedures ranging from 1.3 nGy/frame to 91.4 μGy/frame. Presampled modulation transfer was determined using a tungsten edge test device. The edge-spread function and the finely sampled line spread function accounted for hexagonal sampling, from which the presampled modulation transfer function (MTF) was determined. Since detectors with hexagonal pixels require resampling to square pixels for distortion-free display, the optimal square pixel size was determined by minimizing the root-mean-squared-error of the aperture functions for the square and hexagonal pixels up to the Nyquist limit. Results: At Nyquist frequencies of 8.33 and 9.62 cycles/mm along the apothem and orthogonal to the apothem directions, the modulation factors were 0.397 and 0.228, respectively. For the corresponding axis, the limiting resolution defined as 10% MTF occurred at 13.3 and 12 cycles/mm, respectively. Evaluation of the aperture functions yielded an optimal square pixel size of 54

  7. Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

    Energy Technology Data Exchange (ETDEWEB)

    Barber, W.C., E-mail: william.barber@dxray.com [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Wessel, J.C. [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Nygard, E. [Interon AS, Asker (Norway); Iwanczyk, J.S. [DxRay, Inc., Northridge, CA (United States)

    2015-06-01

    We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

  8. Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

    International Nuclear Information System (INIS)

    Barber, W.C.; Wessel, J.C.; Nygard, E.; Iwanczyk, J.S.

    2015-01-01

    We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

  9. Detective quantum efficiency, modulation transfer function and energy resolution comparison between CdTe and silicon sensors bump-bonded to XPAD3S.

    Science.gov (United States)

    Medjoubi, Kadda; Bucaille, Thierry; Hustache, Stéphanie; Bérar, Jean François; Boudet, Nathalie; Clemens, Jean Claude; Delpierre, Pierre; Dinkespiler, Bernard

    2010-07-01

    XPAD3S is a single-photon-counting chip developed in collaboration by SOLEIL Synchrotron, the Institut Louis Néel and the Centre de Physique de Particules de Marseille. The circuit, designed in the 0.25 microm IBM technology, contains 9600 square pixels with 130 microm side giving a total size of 1 cm x 1.5 cm. The main features of each pixel are: single threshold adjustable from 4.5 keV up to 35 keV, 2 ms frame rate, 10(7) photons s(-1) mm(-2) maximum local count rate, and a 12-bit internal counter with overflow allowing a full 27-bit dynamic range to be reached. The XPAD3S was hybridized using the flip-chip technology with both a 500 microm silicon sensor and a 700 microm CdTe sensor with Schottky contacts. Imaging performances of both detectors were evaluated using X-rays from 6 keV up to 35 keV. The detective quantum efficiency at zero line-pairs mm(-1) for a silicon sensor follows the absorption law whereas for CdTe a strong deficit at low photon energy, produced by an inefficient entrance layer, is measured. The modulation transfer function was evaluated and it was shown that both detectors present an ideal modulation transfer function at 26 keV, limited only by the pixel size. The influence of the Cd and Te K-edges of the CdTe sensor was measured and simulated, establishing that fluorescence photons reduce the contrast transfer at the Nyquist frequency from 60% to 40% which remains acceptable. The energy resolution was evaluated at 6% with silicon using 16 keV X-rays, and 8% with CdTe using 35 keV X-rays. A 7 cm x 12 cm XPAD3 imager, built with eight silicon modules (seven circuits per module) tiled together, was successfully used for X-ray diffraction experiments. A first result recently obtained with a new 2 cm x 3 cm CdTe imager is also presented.

  10. Impairments of spatial learning and memory following intrahippocampal injection in rats of 3-mercaptopropionic acid-modified CdTe quantum dots and molecular mechanisms

    Directory of Open Access Journals (Sweden)

    Wu T

    2016-06-01

    Full Text Available Tianshu Wu,1,2 Keyu He,1,2 Shengjun Ang,1,2 Jiali Ying,1,2 Shihan Zhang,1,2 Ting Zhang,1,2 Yuying Xue,1,2 Meng Tang1,2 1Key Laboratory of Environmental Medicine and Engineering, Ministry of Education, School of Public Health, Collaborative Innovation Center of Suzhou Nano Science and Technology, 2Jiangsu Key Laboratory for Biomaterials and Devices, Southeast University, Nanjing, People’s Republic of China Abstract: With the rapid development of nanotechnology, quantum dots (QDs as advanced nanotechnology products have been widely used in neuroscience, including basic neurological studies and diagnosis or therapy for neurological disorders, due to their superior optical properties. In recent years, there has been intense concern regarding the toxicity of QDs, with a growing number of studies. However, knowledge of neurotoxic consequences of QDs applied in living organisms is lagging behind their development, even if several studies have attempted to evaluate the toxicity of QDs on neural cells. The aim of this study was to evaluate the adverse effects of intrahippocampal injection in rats of 3-mercaptopropionic acid (MPA-modified CdTe QDs and underlying mechanisms. First of all, we observed impairments in learning efficiency and spatial memory in the MPA-modified CdTe QD-treated rats by using open-field and Y-maze tests, which could be attributed to pathological changes and disruption of ultrastructure of neurons and synapses in the hippocampus. In order to find the mechanisms causing these effects, transcriptome sequencing (RNA-seq, an advanced technology, was used to gain the potentially molecular targets of MPA-modified CdTe QDs. According to ample data from RNA-seq, we chose the signaling pathways of PI3K–Akt and MPAK–ERK to do a thorough investigation, because they play important roles in synaptic plasticity, long-term potentiation, and spatial memory. The data demonstrated that phosphorylated Akt (p-Akt, p-ERK1/2, and c-FOS signal

  11. High luminescent fibers with hybrid SiO2-coated CdTe nanocrystals fabricated by electrospinning technique

    International Nuclear Information System (INIS)

    Cao, Yongqiang; Liu, Ning; Yang, Ping; Shi, Ruixia; Ma, Qian; Zhang, Aiyu; Zhu, Yuanna; Wang, Junpeng; Wang, Jianrong

    2015-01-01

    The polyvinylpyrrolidone (PVP) hybrid luminescent micro-/nanofibers doped with the novel hybrid SiO 2 -coated CdTe nanocrystals (HS-CdTe NCs) have been fabricated for the first time via the electrospinning technique. The morphologies and photoluminescence (PL) emissions of HS-CdTe/PVP micro-/nanofibers prepared by doping the HS-CdTe NCs with the different PL peak wavelength (571, 616, and 643 nm) in PVP fibers were investigated by optical and PL microscope. The results revealed that all the HS-CdTe/PVP hybrid fibers showed an ultralong length for several hundreds of micrometers and a relatively uniform diameter of 1000 ∼ 1200 nm. The hybrid fibers displayed a wavelength-tunable PL emission, determining by the PL of doped HS-CdTe NCs. Moreover, similar to the original PL properties of HS-CdTe NCs before the electrospinning, the HS-CdTe/PVP fibers also showed a series of superior PL properties, such as narrow and symmetry PL spectrum, high, and uniform brightness. For comparison purpose, we also prepared three CdTe/PVP hybrid fibers by doping the 553 nm, 600 nm, and 633 nm PL-emitting CdTe NCs respectively in PVP electrospinning fibers. The characterization results showed that, the obtained three CdTe/PVP hybrid fibers had a basically satisfactory micro-/nanofiber morphology with a long length and relatively uniform diameter, but all the fibers exhibited very weak PL emissions. The enormous contrast in PL properties between HS-CdTe/PVP and CdTe/PVP fibers should mainly be ascribed to the different connection modes of ligands with the NCs and the passivation effect of inert hybrid silica shell on HS-CdTe. It is hopeful that the high luminescent HS-CdTe/PVP micro-/nanofibers with the tunable PL peak wavelength would be a good candidate in the optical sensor, light-emitting devices (LEDs), nanometer-scale waveguides, and the other related photonic materials. - Highlights: • The HS-CdTe/PVP electrospun hybrid fibers were fabricated for the first time. • The

  12. Capillary electrophoresis-driven synthesis of water-soluble CdTe quantum dots in nanoliter scale

    Science.gov (United States)

    Nejdl, Lukas; Hynek, David; Adam, Vojtech; Vaculovicova, Marketa

    2018-04-01

    ‘Green nanotechnology’ is a term used for the design of nanomaterials and processes that reduce or eliminate the use and/or generation of hazardous substances. In this paper, a capillary electrophoresis (CE)-driven synthesis of CdTe quantum dots (QDs) and their subsequent conjugation with a metal-binding protein metallothionein (isofom MT1) is reported. Even though the toxic materials (cadmium and potassium borohydride) were used for synthesis, the proposed method can be labeled as ‘environmentally friendly’ because the whole process (synthesis of QDs and MT1 conjugation) was carried out under mild conditions: ultra-low volume (nanoliter scale), relatively low temperature (50 °C), atmospheric pressure, and completed in a short time (under 90 s). Prepared QDs were also characterized by classical fluorescence spectroscopy and transmission electron microscopy. This study opens up new possibilities for the utilization of classical CE in the synthesis of nanoparticles and on-line labeling of biomolecules in the nanoliter scale in short period of time.

  13. Development of a 32-detector CdTe matrix for the SVOM ECLAIRs X/Gamma camera: Preliminary results

    Science.gov (United States)

    Lacombe, K.; Nasser, G.; Amoros, C.; Atteia, J.-L.; Barret, D.; Billot, M.; Cordier, B.; Gevin, O.; Godet, O.; Gonzalez, F.; Houret, B.; Landé, J.; Lugiez, F.; Mandrou, P.; Martin, J.-A.; Marty, W.; Mercier, K.; Pons, R.; Rambaud, D.; Ramon, P.; Rouaix, G.; Waegebaert, V.

    2013-12-01

    ECLAIRs, a 2D coded-mask imaging telescope on the Sino-French SVOM space mission, will detect and locate gamma-ray bursts (GRBs) between 4 and 150 keV. The detector array is an assembly of 6400 Schottky CdTe detectors of size 4×4×1 mm3, biased from -100 V to -600 V and operated at -20 °C to minimize the leakage current and maximize the polarization time. The remarkable low-energy threshold is achieved through various steps: an extensive detectors selection, a low-noise 32 channels ASIC study, and the design of an innovative detection module called XRDPIX formed by a thick film ceramic holding 32 detectors, a high voltage grid and an HTCC substrate housing the ASIC within a hermetic cavity. In this paper, we describe the XRDPIX module and explain the results of first tests to measure the linearity and compare the sources of noise, such as leakage currents and the Equivalent Noise Charge (ENC) measured on ASIC Ceramics. We confront these values with the energy threshold and spectral resolution made with dedicated test benches. Finally, we present the superposition of 32 calibrated spectra of one XRDPIX module, showing the excellent homogeneity of the 32 detectors and the achievement of a detection threshold at 4 keV over the entire module.

  14. Specific recognition and fluorescent determination of aspirin by using core-shell CdTe quantum dot-imprinted polymers

    International Nuclear Information System (INIS)

    Wei, Xiao; Zhou, Zhiping; Hao, Tongfan; Lu, Kai; Dai, Jiangdong; Xu, Yeqing; Li, Hongji; Zheng, Xudong; Gao, Lin; Wang, Jixiang; Yan, Yongsheng; Zhu, Yanzhuo

    2015-01-01

    A molecularly imprinted polymer (MIP) was deposited on the surface of CdTe quantum dots (QDs) to act as a recognition element for aspirin. The MIP was synthesized from 3-aminopropyltriethoxysilane as the functional monomer, aspirin as the template, and tetraethoxysilane as the cross-linker via a sol–gel process that leads to surface imprinting. It is shown that the fraction of QDs and the polymerization process affect size and morphology of the MIP-coated QDs. The optical stability, effects of pH, detection time and selective determination of aspirin were optimized. The fluorescence intensity of the particles (photoexcited at 400 nm and measured at 628 nm) decreases linearly with increasing concentration of aspirin in the 2.0–50 μmol L −1 range. The limit of detection (at an S/N of 3) is 0.25 μmol L −1 . The method was successfully applied to the determination of aspirin in human urine and saliva. (author)

  15. Probing Defects in a Small Pixellated CdTe Sensor Using an Inclined Mono Energetic X-Ray Micro Beam

    Science.gov (United States)

    Fröjdh, Erik; Fröjdh, C.; Gimenez, E. N.; Krapohl, D.; Maneuski, D.; Norlin, B.; O'Shea, V.; Wilhelm, H.; Tartoni, N.; Thungström, G.; Zain, R. M.

    2013-08-01

    High quantum efficiency is important in X-ray imaging applications. This means using high-Z sensor materials. Unfortunately many of these materials suffer from defects that cause non-ideal charge transport. In order to increase the understanding of these defects, we have mapped the 3D response of a number of defects in two 1 mm thick CdTe sensors with different pixel sizes (55 μm and 110 μm) using a monoenergetic microbeam at 79 keV. The sensors were bump bonded to Timepix read out chips. Data was collected in photon counting as well as time-over-threshold mode. The time-over-threshold mode is a very powerful tool to investigate charge transport properties and fluorescence in pixellated detectors since the signal from the charge that each photon deposits in each pixel can be analyzed. Results show distorted electrical field around the defects, indications of excess leakage current and large differences in behavior between electron collection and hole collection mode. The experiments were carried out on the Extreme Conditions Beamline I15 at Diamond Light Source.

  16. Spectroscopic investigations on the effect of N-Acetyl-L-cysteine-Capped CdTe Quantum Dots on catalase

    Science.gov (United States)

    Sun, Haoyu; Yang, Bingjun; Cui, Erqian; Liu, Rutao

    2014-11-01

    Quantum dots (QDs) are recognized as some of the most promising semiconductor nanocrystals in biomedical applications. However, the potential toxicity of QDs has aroused wide public concern. Catalase (CAT) is a common enzyme in animal and plant tissues. For the potential application of QDs in vivo, it is important to investigate the interaction of QDs with CAT. In this work, the effect of N-Acetyl-L-cysteine-Capped CdTe Quantum Dots with fluorescence emission peak at 612 nm (QDs-612) on CAT was investigated by fluorescence, synchronous fluorescence, fluorescence lifetime, ultraviolet-visible (UV-vis) absorption and circular dichroism (CD) techniques. Binding of QDs-612 to CAT caused static quenching of the fluorescence, the change of the secondary structure of CAT and the alteration of the microenvironment of tryptophan residues. The association constants K were determined to be K288K = 7.98 × 105 L mol-1 and K298K = 7.21 × 105 L mol-1. The interaction between QDs-612 and CAT was spontaneous with 1:1 stoichiometry approximately. The CAT activity was also inhibited for the bound QDs-612. This work provides direct evidence about enzyme toxicity of QDs-612 to CAT in vitro and establishes a new strategy to investigate the interaction between enzyme and QDs at a molecular level, which is helpful for clarifying the bioactivities of QDs in vivo.

  17. Portable gamma- and X-ray analyzers based on CdTe p-i-n detectors

    CERN Document Server

    Khusainov, A K; Bahlanov, S V; Derbin, A V; Ivanov, V V; Lysenko, V V; Morozov, F; Mouratov, V G; Muratova, V N; Petukhov, Y A; Pirogov, A M; Polytsia, O P; Saveliev, V D; Solovei, V A; Yegorov, K A; Zhucov, M P

    1999-01-01

    Several portable instruments are designed using previously reported CdTe detector technology. These can be divided into three groups according to their energy ranges: (1) 3-30 keV XRF analyzers, (2) 5-120 keV wide range XRF analyzers and (3) gamma-ray spectrometers for operation up to 1500 keV. These instruments are used to inspect several hundreds of samples in situ during a working day in applications such as a metal alloy verification at customs control. Heavy metals are identified through a 3-100 mm thick package with these instruments. Surface contamination by heavy metals (for example toxins such as Hg, Th and Pb in housing environmental control), the determination of Pb concentration in gasoline, geophysical control in mining, or nuclear material control are other applications. The weight of these XRF probes is about 1 kg and two electronic designs are used: one with embedded computer and another based on a standard portable PC. The instruments have good precision and high productivity for measurements...

  18. Development of FRET-Based Assays in the Far-Red Using CdTe Quantum Dots

    Directory of Open Access Journals (Sweden)

    E. Z. Chong

    2007-01-01

    Full Text Available Colloidal quantum dots (QDs are now commercially available in a biofunctionalized form, and Förster resonance energy transfer (FRET between bioconjugated dots and fluorophores within the visible range has been observed. We are particularly interested in the far-red region, as from a biological perspective there are benefits in pushing to ∼700 nm to minimize optical absorption (ABS within tissue and to avoid cell autofluorescence. We report on FRET between streptavidin- (STV- conjugated CdTe quantum dots, Qdot705-STV, with biotinylated DY731-Bio fluorophores in a donor-acceptor assay. We also highlight the changes in DY731-Bio absorptivity during the streptavidin-biotin binding process which can be attributed to the structural reorientation. For fluorescence beyond 700 nm, different alloy compositions are required for the QD core and these changes directly affect the fluorescence decay dynamics producing a marked biexponential decay with a long-lifetime component in excess of 100 nanoseconds. We compare the influence of the two QD relaxation routes upon FRET dynamics in the presence of DY731-Bio.

  19. Fluorescence enhancement of CdTe MPA-capped quantum dots by glutathione for hydrogen peroxide determination.

    Science.gov (United States)

    Rodrigues, S Sofia M; Ribeiro, David S M; Molina-Garcia, L; Ruiz Medina, A; Prior, João A V; Santos, João L M

    2014-05-01

    The manipulation of the surface chemistry of semiconductor nanocrystals has been exploited to implement distinct sensing strategies in many analytical applications. In this work, reduced glutathione (GSH) was added at reaction time, as an electron-donor ligand, to markedly increase the quantum yield and the emission efficiency of MPA-capped CdTe quantum dots. The developed approach was employed in the implementation of an automated flow methodology for hydrogen peroxide determination, as this can oxidize GSH preventing its surface passivating effect and producing a manifest fluorescence quenching. After optimization, linear working calibration curve for hydrogen peroxide concentrations between 0.0025% and 0.040% were obtained (n=6), with a correlation coefficient of 0.9975. The detection limit was approximately 0.0012%. The developed approach was employed in the determination of H₂O₂ in contact lens preservation solutions and the obtained results complied with those furnished by the reference method, with relative deviations comprised between -1.18 and 4.81%. Copyright © 2014 Elsevier B.V. All rights reserved.

  20. A 2D 4×4 Channel Readout ASIC for Pixelated CdTe Detectors for Medical Imaging Applications.

    Science.gov (United States)

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Martínez, Ricardo; Puigdengoles, Carles

    2015-10-01

    We present a 16-channel readout integrated circuit (ROIC) with nanosecond-resolution time to digital converter (TDC) for pixelated Cadmium Telluride (CdTe) gamma-ray detectors. The 4 × 4 pixel array ROIC is the proof of concept of the 10 × 10 pixel array readout ASIC for positron-emission tomography (PET) scanner, positron-emission mammography (PEM) scanner, and Compton gamma camera. The electronics of each individual pixel integrates an analog front-end with switchable gain, an analog to digital converter (ADC), configuration registers, and a 4-state digital controller. For every detected photon, the pixel electronics provides the energy deposited in the detector with 10-bit resolution, and a fast trigger signal for time stamp. The ASIC contains the 16-pixel matrix electronics, a digital controller, five global voltage references, a TDC, a temperature sensor, and a band-gap based current reference. The ASIC has been fabricated with TSMC 0.25 μ m mixed-signal CMOS technology and occupies an area of 5.3 mm × 6.8 mm. The TDC shows a resolution of 95.5 ps, a precision of 600 ps at full width half maximum (FWHM), and a power consumption of 130 μ W. In acquisition mode, the total power consumption of every pixel is 200 μ W. An equivalent noise charge (ENC) of 160 e - RMS at maximum gain and negative polarity conditions has been measured at room temperature.

  1. Laser-excited optical emission response of CdTe quantum dot/polymer nanocomposite under shock compression

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Pan [LNM, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States); Kang, Zhitao; Summers, Christopher J. [Phosphor Technology Center of Excellence, Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia 30332-0826 (United States); Bansihev, Alexandr A.; Christensen, James M.; Dlott, Dana D. [School of Chemical Sciences and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Breidenich, Jennifer; Scripka, David A.; Thadhani, Naresh N. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States); Zhou, Min, E-mail: min.zhou@gatech.edu [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States)

    2016-01-04

    Laser-driven shock compression experiments and corresponding finite element method simulations are carried out to investigate the blueshift in the optical emission spectra under continuous laser excitation of a dilute composite consisting of 0.15% CdTe quantum dots by weight embedded in polyvinyl alcohol polymer. This material is a potential candidate for use as internal stress sensors. The analyses focus on the time histories of the wavelength blue-shift for shock loading with pressures up to 7.3 GPa. The combined measurements and calculations allow a relation between the wavelength blueshift and pressure for the loading conditions to be extracted. It is found that the blueshift first increases with pressure to a maximum and subsequently decreases with pressure. This trend is different from the monotonic increase of blueshift with pressure observed under conditions of quasistatic hydrostatic compression. Additionally, the blueshift in the shock experiments is much smaller than that in hydrostatic experiments at the same pressure levels. The differences in responses are attributed to the different stress states achieved in the shock and hydrostatic experiments and the time dependence of the mechanical response of the polymer in the composite. The findings offer a potential guide for the design and development of materials for internal stress sensors for shock conditions.

  2. Caliste 256: A CdTe imaging spectrometer for space science with a 580 {mu}m pixel pitch

    Energy Technology Data Exchange (ETDEWEB)

    Limousin, O., E-mail: olimousin@cea.fr [CEA/Saclay, DSM/Irfu/Service d' Astrophysique, F-91191 Gif-sur-Yvette (France); Lugiez, F.; Gevin, O. [CEA/Saclay, DSM/Irfu/Service d' Electronique Detecteurs et Informatique, F-91191 Gif-sur-Yvette (France); Meuris, A.; Blondel, C. [CEA/Saclay, DSM/Irfu/Service d' Astrophysique, F-91191 Gif-sur-Yvette (France); Delagnes, E. [CEA/Saclay, DSM/Irfu/Service d' Electronique Detecteurs et Informatique, F-91191 Gif-sur-Yvette (France); Donati, M.; Le Mer, I.; Martignac, J.; Pinsard, F. [CEA/Saclay, DSM/Irfu/Service d' Astrophysique, F-91191 Gif-sur-Yvette (France); Vassal, M.C.; Bocage, R.; Soufflet, F. [3D Plus, 641 rue Helene Boucher, F-78532 Buc (France)

    2011-08-11

    Caliste project aims at hybridizing 1 cm{sup 2} CdTe or CdZnTe pixel detectors with low-noise full custom front-end electronics, in a single component standing in a 1x1x2 cm{sup 3} volume. Caliste device is 4-side buttable and can be used as elementary detection unit of a large mosaic to form a hard X-ray focal plane of any size and shape. Caliste is especially designed to match astronomical space mission requirements and its design takes into account environmental constraints, radiation environment in particular. This new imaging spectrometer for hard X-rays detection offers high spectral and spatial resolution together with accurate time-tagging capability and low dead time. Caliste concept relies on a 3D hybridization technology that consists in stacking full custom ASICs perpendicular to the detection surface into a single component. This technique simultaneously permits to realize a buttable imager and to enhance performance and uniformity response. Our last prototype is called Caliste 256 and integrates 16x16 pixels array, 580 {mu}m pitch and 256 corresponding independent spectroscopy channels. This paper presents Caliste 256 design and properties. We emphasize spectral performance and demonstrate spectral resolution capabilities better than 1 keV FWHM at 60 keV.

  3. Long-Term Stable Surface Treatments on CdTe and CdZnTe Radiation Detectors

    Science.gov (United States)

    Pekarek, Jakub; Belas, Eduard; Zazvorka, Jakub

    2017-04-01

    The spectral resolution and charge collection efficiency (CCE) of cadmium telluride (CdTe) and cadmium zinc telluride (CZT) room-temperature x-ray and gamma-ray detectors are often limited by high surface leakage current due to conducting surface species created during detector fabrication. Surface treatments play a major role in reduction of this surface leakage current. The effect of various types of surface etching and passivation on the leakage current and thereby the spectral energy resolution, CCE, and internal electric field profile of CdTe/CZT detectors has been studied. The main aim of this work is preparation of long-term stable detectors with strongly reduced leakage current. The time stability of the current-voltage characteristic and spectral resolution was investigated during 21 days and 1 year, respectively, after performing surface treatments. Our results suggest that the optimal detector preparation method is chemomechanical polishing in bromine-ethylene glycol solution followed by chemical etching in bromine-methanol solution then surface passivation in potassium hydroxide or ammonium fluoride (NH4F/H2O2). Detectors prepared using this optimal treatment exhibited low leakage current, high spectral resolution, and long-term stability compared with those subjected to other surface preparation methods.

  4. Facile synthesis of Gd-doped CdTe quantum dots with optimized properties for optical/MR multimodal imaging.

    Science.gov (United States)

    Li, Zizhen; Dergham, Ali; McCulloch, Holly; Qin, Yubo; Yang, Xiuying; Zhang, Jingchang; Cao, Xudong

    2017-12-01

    Each imaging modality has its own merits and intrinsic limitations; therefore, combining two or more complementary imaging modalities has become an interesting area of research. Recently, magnetic ion-doped quantum dots have become an increasingly promising class of optical/magnetic resonance multimodal imaging probes due to their excellent physical and chemical properties. In this work, Gd-doped CdTe quantum dots (QDs) were successfully synthesized via a facile one-step refluxing route,and their optimal synthesis conditions were investigated. The prepared CdTe:Gd QDs were shown to exhibit good optical properties with high quantum yields up to 69%, high longitudinal relaxivity (r 1  = 3.8 mM -1  s -1 ), and good crystalline structures. In addition, after further QD surface modification with dextran amine (DA), the resulting DA-modified QDs (i.e. DA-CdTe:Gd QDs) showed strong magnetic resonance imaging contrast (r 1  = 3.5 mM -1  s -1 ) and improved biocompatibility when tested with cell cultures in vitro. Taken together, this new material demonstrated promising performances for both optical and magnetic resonance imaging modalities, suggesting its promising potential applications in non-invasive imaging, particularly in neuronal tracing.

  5. Electrodeposition of CdTe thin films onto n-Si(1 0 0): nucleation and growth mechanisms

    International Nuclear Information System (INIS)

    Gomez, H.; Henriquez, R.; Schrebler, R.; Cordova, R.; Ramirez, D.; Riveros, G.; Dalchiele, E.A.

    2005-01-01

    The mechanisms related to the initial stages of the nucleation and growth of cadmium telluride (CdTe) thin films on the rough face side of a (1 0 0) monocrystalline n-type silicon have been studied as a function of different potential steps that varied from an initial value of -0.200 V to values comprised between -0.515 and -0.600 V versus saturated calomel electrode (SCE). The analysis of the corresponding potentiostatic j/t transients suggests that the main phenomena involved at short times is the formation of a Te-Cd bi-layer (BL). For potentials below -0.540 V, the formation of this bi-layer can be considered independent of potential. At greater times, the mechanisms is controlled by two process: (i) progressive nucleation three dimensional charge transfer controlled growth (PN-3D) ct and (ii) progressive nucleation three dimensional diffusion controlled growth (PN-3D) diff , both giving account for the formation of conical and hemispherical nuclei, respectively. Ex situ AFM images of the surface seem to support these assumptions

  6. Coreactant enhanced anodic electrochemiluminescence of CdTe quantum dots at low potential for sensitive biosensing amplified by enzymatic cycle.

    Science.gov (United States)

    Liu, Xuan; Ju, Huangxian

    2008-07-15

    This work used sulfite as a coreactant to enhance the anodic electrochemiluminescence (ECL) of mercaptopropionic acid modified CdTe quantum dots (QDs). This strategy proposed the first coreactant anodic ECL of QDs and led to a sensitive ECL emission of QDs in aqueous solution at relatively low potential. In the presence of dissolved oxygen, the stable ECL emission resulted from the excited QDs. Thus, an ECL detection method was proposed at +0.90 V (vs Ag/AgCl) based on the quenching of excited QDs by the analyte. Using tyrosine as a model compound, whose electrooxidized product could quench the excited QDs and thus the ECL emission, an analytical method for detection of tyrosine in a wide concentration range was developed. Furthermore, by combining an enzymatic cycle of trace tyrosinase to produce the oxidized product with an energy-transfer process, an extremely sensitive method for ECL detection of tyrosine with a subpicomolar limit of detection was developed. The sulfite-enhanced anodic ECL emission provided an alternative for traditional ECL light emitters and a new methodology for extremely sensitive ECL detection of mono- and dihydroxybenzenes at relatively low anodic potential. This strategy could be easily realized and opened new avenues for the applications of QDs in ECL biosensing.

  7. Influences of the CdS nanoparticles grown strategies on CdTe nanorods array films: A comparison between successive ionic layer absorption and reaction and chemical bath deposition

    International Nuclear Information System (INIS)

    Wang, Jun; Zhou, Xiaoming; Lv, Pin; Yang, Lihua; Ding, Dong; Niu, Jiasheng; Liu, Li; Li, Xue; Fu, Wuyou; Yang, Haibin

    2016-01-01

    The cadmium sulfide (CdS) film is deposited on the surface of cadmium telluride (CdTe) nanorods (NRs) by two different methods, successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) techniques. The influence of the deposition parameters on the properties of the films is investigated. Compared to SILAR, CBD is a simple and time saving technique, which can ensure full coverage and better growth of CdS on the surface of CdTe NRs. The photovoltaic characteristics of CdS sensitized CdTe films are also investigated. It is found that the CdTe/CBD-CdS thin film demonstrates excellent photoelectrical properties, which is ascribed to the large absorption coefficient of the material, indicating the potential applications in solar cells.

  8. Study of the Mg incorporation in CdTe for developing wide band gap Cd1−xMgxTe thin films for possible use as top-cell absorber in a tandem solar cell

    International Nuclear Information System (INIS)

    Martínez, Omar S.; Millán, Aduljay Remolina; Huerta, L.; Santana, G.; Mathews, N.R.; Ramon-Garcia, M.L.; Morales, Erik R.; Mathew, X.

    2012-01-01

    Highlights: ► Thin films of Cd 1−x Mg x Te with high spatial uniformity and band gap in the range of 1.6–1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg. ► Obtained Cd 1−x Mg x Te films have the structural characteristics of the CdTe, evidence of the change in atomic scattering due to incorporation of Mg was observed. ► XRD and XPS data confirmed the incorporation of Mg in the lattice of CdTe. ► SEM images revealed the impact of Mg incorporation on the morphology of the films, the changes in grain size and grain morphology are noticeable. - Abstract: Thin films of Cd 1−x Mg x Te with band gap in the range of 1.6–1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg on glass substrates heated at 300 °C. Different experimental techniques such as XRD, UV–vis spectroscopy, SEM, and XPS were used to study the effect of Mg incorporation into the lattice of CdTe. The band gap of the films showed a clear tendency to increase as the Mg content in the film is increased. The Cd 1−x Mg x Te films maintain all the structural characteristics of the CdTe, however, diminishing of intensity for the XRD patterns is observed due to both change in preferential orientation and change in atomic scattering due to the incorporation of Mg. SEM images showed significant evidences of morphological changes due to the presence of Mg. XRD, UV–vis spectroscopy, and XPS data confirmed the incorporation of Mg in the lattice of CdTe. The significant increase in band gap of CdTe due to incorporation of Mg suggests that the Cd 1−x Mg x Te thin film is a candidate material to use as absorber layer in the top-cell of a tandem solar cell.

  9. CdTe quantum dots functionalized with 4-amino-2,2,6,6-tetramethylpiperidine-N-oxide as luminescent nanoprobe for the sensitive recognition of bromide ion

    Energy Technology Data Exchange (ETDEWEB)

    Adegoke, Oluwasesan [Department of Chemistry, Rhodes University, Grahamstown 6140 (South Africa); Hosten, Eric; McCleland, Cedric [Department of Chemistry, Nelson Mandela Metropolitan University (South Campus), Port Elizabeth 6031 (South Africa); Nyokong, Tebello, E-mail: t.nyokong@ru.ac.za [Department of Chemistry, Rhodes University, Grahamstown 6140 (South Africa)

    2012-04-06

    Graphical abstract: A bromide ion-selective modified nanoprobe sensor based on 4-amino-2,2,6,6-tetramethylpiperidine-N-oxide (4AT)-functionalized CdTe quantum dots (QDs-4AT) showed a high selectivity and sensitivity for the determination of bromide ion using fluorescence recovery. Highlights: Black-Right-Pointing-Pointer Water soluble CdTe quantum dots interact with tetramethylpiperidine-N-oxide. Black-Right-Pointing-Pointer Quantum dots fluorescence is quenched by the radical. Black-Right-Pointing-Pointer In the presence of bromide ions the fluorescence is restored. Black-Right-Pointing-Pointer The sensor is more selective to bromine ions than other common ions. - Abstract: A novel bromide ion-selective modified nanoprobe sensor based on 4-amino-2,2,6,6-tetramethylpiperidine-N-oxide (4AT)-functionalized CdTe quantum dots (QDs-4AT) has been developed. Fluorescence quenching of the QDs by 4AT was observed. The functionalized QDs-4AT nanoprobe allowed a highly sensitive determination of bromide ion via analyte-induced change in the photoluminescence (fluorescence recovery) of the modified QDs. A detection limit of 0.6 nM of bromide ion was obtained, while the interfering effect of other inorganic cations and anions was investigated to examine the selectivity of the nanoprobe. The linear range was between 0.01 and 0.13 {mu}M. Combined fluorescence lifetime and electron paramagnetic resonance measurements confirmed electron transfer processes between bromide ion and QDs-4AT.

  10. Technology Support for High-Throughput Processing of Thin-Film CdTe PV Modules: Final Technical Report, April 1998 - October 2001

    Energy Technology Data Exchange (ETDEWEB)

    Rose, D. H.; Powell, R. C.

    2002-04-01

    This report describes the significant progress made in four areas of this subcontract: process and equipment development; efficiency improvement; characterization and analysis; and environmental, health, and safety. As part of the process and equipment development effort, vapor-transport deposition (VTD) was implemented first on a 60-cm-web pilot-production system, then on a 120-cm-web high-throughput coater. Deposition of CdS and CdTe films at a throughput of 3 m2/min was demonstrated, and more than 56,000 plates (each 0.72 m2) were coated -- 16 times the total number coated prior to the start of the contract. Progress was also made in the conversion efficiency and yield of both standard and next-generation modules, with data from more than 3000 sequentially deposited modules having an average total-area conversion efficiency of 7% and next-generation modules produced with efficiency as high as 9.3% (10.15% aperture-area efficiency as measured by NREL). Successful implementation o f in-situ CdS thickness measurements was important to progress in thickness uniformity and control. Net CdTe material utilization of 82% was demonstrated. The ability to raise the utilization further was shown with the demonstration of inherent CdS and CdTe material utilizations of over 90%. Post-CdTe-deposition process development, which included process space exploration and problem diagnosis, was an important part of advances in efficiency and yield. As part of the efficiency-improvement task, research was done on cells and modules with reduced CdS thickness to increase photocurrent.

  11. Fine-Pitch CdTe Detector for Hard X-Ray Imaging and Spectroscopy of the Sun with the FOXSI Rocket Experiment

    Science.gov (United States)

    Ishikawa, Shin-nosuke; Katsuragawa, Miho; Watanabe, Shin; Uchida, Yuusuke; Takeda, Shin'lchiro; Takahashi, Tadayuki; Saito, Shinya; Glesener, Lindsay; Bultrago-Casas, Juan Camilo; Krucker, Sam; hide

    2016-01-01

    We have developed a fine-pitch hard X-ray (HXR) detector using a cadmium telluride (CdTe) semiconductor for imaging and spectroscopy for the second launch of the Focusing Optics Solar X-ray Imager (FOXSI). FOXSI is a rocket experiment to perform high sensitivity HXR observations from 4 to 15 keV using the new technique of HXR focusing optics. The focal plane detector requires less than 100 micrometers position resolution (to take advantage of the angular resolution of the optics) and approximately equals 1 keV energy resolution (full width at half maximum (FWHM)) for spectroscopy down to 4 keV, with moderate cooling (greater than -30 C). Double-sided silicon strip detectors were used for the first FOXSI flight in 2012 to meet these criteria. To improve the detectors' efficiency (66% at 15 keV for the silicon detectors) and position resolution of 75 micrometers for the second launch, we fabricated double-sided CdTe strip detectors with a position resolution of 60 micrometers and almost 100% efficiency for the FOXSI energy range. The sensitive area is 7.67 mm x 7.67 mm, corresponding to the field of view of 791'' x 791''. An energy resolution of 1 keV (FWHM) and low-energy threshold of approximately equals 4 keV were achieved in laboratory calibrations. The second launch of FOXSI was performed on 11 December 2014, and images from the Sun were successfully obtained with the CdTe detector. Therefore, we successfully demonstrated the detector concept and the usefulness of this technique for future HXR observations of the Sun.

  12. Comparison of three types of XPAD3.2/CdTe single chip hybrids for hard X-ray applications in material science and biomedical imaging

    Science.gov (United States)

    Buton, C.; Dawiec, A.; Graber-Bolis, J.; Arnaud, K.; Bérar, J. F.; Blanc, N.; Boudet, N.; Clémens, J. C.; Debarbieux, F.; Delpierre, P.; Dinkespiler, B.; Gastaldi, T.; Hustache, S.; Morel, C.; Pangaud, P.; Perez-Ponce, H.; Vigeolas, E.

    2014-09-01

    The CHIPSPECT consortium aims at building a large multi-modules CdTe based photon counting detector for hard X-ray applications. For this purpose, we tested nine XPAD3.2 single chip hybrids in various configurations (i.e. Ohmic vs. Schottky contacts or electrons vs. holes collection mode) in order to select the most performing and best suited configuration for our experimental requirements. Measurements have been done using both X-ray synchrotron beams and 241Am source. Preliminary results on the image quality, calibration, stability, homogeneity and linearity of the different types of detectors are presented.

  13. Elucidating PID Degradation Mechanisms and In Situ Dark I–V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules

    Energy Technology Data Exchange (ETDEWEB)

    Hacke, Peter; Spataru, Sergiu; Johnston, Steve; Terwilliger, Kent; VanSant, Kaitlyn; Kempe, Michael; Wohlgemuth, John; Kurtz, Sarah; Olsson, Anders; Propst, Michelle

    2016-11-01

    A progression of potential-induced degradation (PID) mechanisms are observed in CdTe modules, including shunting/junction degradation and two different manifestations of series resistance depending on the stress level and water ingress. The dark I-V method for in-situ characterization of Pmax based on superposition was adapted for the thin-film modules undergoing PID in view of the degradation mechanisms observed. An exponential model based on module temperature and relative humidity was fit to the PID rate for multiple stress levels in chamber tests and validated by predicting the observed degradation of the module type in the field.

  14. Photoluminescence spectra of CdTe epitaxial layers prepared by chemical vapor deposition from organometallic compounds on GaAs substrate

    International Nuclear Information System (INIS)

    Batmanov, S.M.; Liverko, V.N.; Moiseev, A.N.; Sennikov, P.G.; Shakarov, M.A.

    1989-01-01

    Spectra of low-temperature photoluminescence (LTP) of CdTe epitaxial layers on GaAs, prepared according to reaction between dimethyl cadmium and diethyl tellurium of different degrees of purity, have been investigated. It is shown that LPT spectra are guite sensitive to the degree of purity of the organometallic compounds (OMC), hence, when passing to less pure OMC in LTP spectra of the layers free exciton recombination lines are not resolved, recombination lines of bound excitons are broadened, and in the long-wave region a band of ''self-activated'' luminescence due to recombination of the complex donor-cadmium vacancy is recorded

  15. Properties of Hg1-xCdxTe epitaxial films grown on (211)CdTe and (211)CdZnTe

    International Nuclear Information System (INIS)

    Di Stefano, M.C.; Gilabert, U.; Heredia, E.; Trigubo, A.B.

    2004-01-01

    Hg 1-x Cd x Te (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd 0.96 Zn 0.04 Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure has been used for the epitaxial growth. Substrates and films were characterized by optical microscopy, chemical etching and X ray diffraction (Laue technique). The electrical properties were determined by Hall effect measurements. The characterization results allowed to evaluate the crystalline quality of MCT films. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Influence of plasma parameters and substrate temperature on the structural and optical properties of CdTe thin films deposited on glass by laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Quiñones-Galván, J. G.; Santana-Aranda, M. A.; Pérez-Centeno, A. [Departamento de Física, Centro Universitario de Ciencias Exactas e Ingenierías, Universidad de Guadalajara, Boulevard Marcelino García Barragán 1421, Guadalajara, Jalisco C.P. 44430 (Mexico); Camps, Enrique [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027, D.F., C.P. 11801 (Mexico); Campos-González, E.; Guillén-Cervantes, A.; Santoyo-Salazar, J.; Zelaya-Angel, O. [Departamento de Física, CINVESTAV-IPN, Apartado Postal 14-740, D. F. C.P. 07360 (Mexico); Hernández-Hernández, A. [Escuela Superior de Apan, Universidad Autónoma del Estado de Hidalgo, Calle Ejido de Chimalpa Tlalayote s/n Colonia Chimalpa, Apan Hidalgo (Mexico); Moure-Flores, F. de [Facultad de Química, Materiales, Universidad Autónoma de Querétaro, Querétaro C.P. 76010 (Mexico)

    2015-09-28

    In the pulsed laser deposition of thin films, plasma parameters such as energy and density of ions play an important role in the properties of materials. In the present work, cadmium telluride thin films were obtained by laser ablation of a stoichiometric CdTe target in vacuum, using two different values for: substrate temperature (RT and 200 °C) and plasma energy (120 and 200 eV). Structural characterization revealed that the crystalline phase can be changed by controlling both plasma energy and substrate temperature; which affects the corresponding band gap energy. All the thin films showed smooth surfaces and a Te rich composition.

  17. Probing the sensitive and selective luminescent detection of peroxynitrite using thiol-capped CdTe and CdTe-ZnS quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Adegoke, Oluwasesan [Department of Chemistry, Rhodes University, Grahamstown 6140 (South Africa); Nyokong, Tebello, E-mail: t.nyokong@ru.ac.za [Department of Chemistry, Rhodes University, Grahamstown 6140 (South Africa)

    2013-02-15

    CdTe and CdTe-ZnS quantum dots (QDs) capped with 3-mercaptopropionic acid (MPA), thioglycolic acid (TGA), or glutathione (GSH) have been employed for the first time as luminescent probes for the sensitive and selective detection of peroxynitrite (ONOO{sup -}) in aqueous solution. The sensitivity of the proposed probe followed the order: MPA-{sub TGA}-CdTe-ZnS>GSH-{sub TGA}-CdTe-ZnS>MPA-CdTe QDs. The varying degree of quenching is elucidated based on the QD-thiolate bond of CdTe-ZnS being more sensitive to oxidation from ONOO{sup -} than CdTe. The selectivity of the probe in the presence of co-existing species followed the order: GSH-{sub TGA}-CdTe-ZnS>MPA-{sub TGA}-CdTe-ZnS>MPA-CdTe QDs. QDs capped with MPA showed less selectivity for ONOO{sup -} than GSH. The best limit of detection (LOD) of 12.6 nM was obtained for MPA-{sub TGA}-CdTe-ZnS QDs. Time-resolved fluorescence measurements indicated that the interaction between ONOO{sup -} and the QDs is static in nature. - Graphical abstract: CdTe and CdTe-ZnS quantum dots capped with 3-mercaptopropionic acid or glutathione are employed for the detection of peroxynitrite in aqueous solution, with glutathione capped quantum dots showing the best selectivity and core-shell quantum dots showing better sensitivity than core quantum dots. Highlights: Black-Right-Pointing-Pointer CdTe and CdTe-ZnS quantum dots were employed for the detection of peroxynitrite. Black-Right-Pointing-Pointer The best limit of detection of 12.6 nM was obtained. Black-Right-Pointing-Pointer Quantum dots capped with mercaptopropionic acid were less selective for ONOO{sup -} than glutathione. Black-Right-Pointing-Pointer Interaction between peroxynitrite and the quantum dots is static in nature.

  18. Characterization of electroless Au, Pt and Pd contacts on CdTe and ZnTe by RBS and SIMS techniques

    International Nuclear Information System (INIS)

    Roumie, M.; Hageali, M.; Zahraman, K.; Nsouli, B.; Younes, G.

    2004-01-01

    Rutherford backscattering spectrometry (RBS) was applied to characterize Au, Pt and Pd contacts on II-VI semiconductor materials, CdTe and ZnTe, used as nuclear detectors. Electroless thin film depositions were prepared by changing the concentration of the reaction solution. Contrary to the deposition reaction time, it was observed that the amount of solution dilution degree had a considerable effect on increasing the thickness of the metal layer. Furthermore, PICTS electrical measurements confirmed the depth profile analysis performed by RBS and SIMS

  19. Research Leading to High Throughput Manufacturing of Thin-Film CdTe PV Modules: Annual Subcontract Report, September 2004--September 2005

    Energy Technology Data Exchange (ETDEWEB)

    Powell, R. C.

    2006-04-01

    Specific overall objectives of this subcontract are improvement in baseline field performance of manufactured CdTe PV modules while reducing environmental, health and safety risk in the manufacturing environment. Project objectives focus on four broad categories: (1) development of advanced front-contact window layers, (2) improved semiconductor film deposition, (3) development of improved accelerated life test procedures that indicate baseline field performance, and (4) reduction of cadmium-related environmental, health and safety risks. First Solar has significantly increased manufacturing capacity from less than 2 MW/yr to more than 20 MW/yr, while increasing the average module total-area power conversion efficiency from 7% to >9%. First Solar currently manufactures and sells 50-65-W thin-film CdTe PV modules at a rate of about 1.9 MW/month. Sales backlog (booked sales less current inventory divided by production rate) is more than a year. First Solar is currently building new facilities and installing additional equipment to increase production capacity by 50 MW/yr; the additional capacity is expected to come on line in the third quarter of 2006.

  20. Exploration of CdTe quantum dots as mesoscale pressure sensors via time-resolved shock-compression photoluminescent emission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Zhitao [Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia 30332-0826 (United States); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States); Banishev, Alexandr A.; Christensen, James; Dlott, Dana D. [School of Chemical Sciences and Fredrick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Lee, Gyuhyon; Scripka, David A.; Breidenich, Jennifer; Summers, Christopher J.; Thadhani, Naresh N., E-mail: naresh.thadhani@mse.gatech.edu [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States); Xiao, Pan [LNM, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States); Zhou, Min [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States)

    2016-07-28

    The nanometer size of CdTe quantum dots (QDs) and their unique optical properties, including size-tunable narrow photoluminescent emission, broad absorption, fast photoluminescence decay, and negligible light scattering, are ideal features for spectrally tagging the shock response of localized regions in highly heterogeneous materials such as particulate media. In this work, the time-resolved laser-excited photoluminescence response of QDs to shock-compression was investigated to explore their utilization as mesoscale sensors for pressure measurements and in situ diagnostics during shock loading experiments. Laser-driven shock-compression experiments with steady-state shock pressures ranging from 2.0 to 13 GPa were performed on nanocomposite films of CdTe QDs dispersed in a soft polyvinyl alcohol polymer matrix and in a hard inorganic sodium silicate glass matrix. Time-resolved photoluminescent emission spectroscopy was used to correlate photoluminescence changes with the history of shock pressure and the dynamics of the matrix material surrounding the QDs. The results revealed pressure-induced blueshifts in emitted wavelength, decreases in photoluminescent emission intensity, reductions in peak width, and matrix-dependent response times. Data obtained for these QD response characteristics serve as indicators for their use as possible time-resolved diagnostics of the dynamic shock-compression response of matrix materials in which such QDs are embedded as in situ sensors.

  1. Diodes based on semi-insulating CdTe crystals with Mo/MoO{sub x} contacts for X- and γ-ray detectors

    Energy Technology Data Exchange (ETDEWEB)

    Maslyanchuk, O.; Kulchynsky, V.; Solovan, M. [Chernivtsi National University, Chernivtsi (Ukraine); Gnatyuk, V. [Institute of Semiconductor Physics, NAS of Ukraine, Kyiv (Ukraine); Potiriadis, C. [Greek Atomic Energy Commission, Attiki (Greece); Kaissas, I. [Greek Atomic Energy Commission, Attiki (Greece); Department of Electrical and Computer Engineering, Aristotle University of Thessaloniki (Greece); Brus, V. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany)

    2017-03-15

    This paper reports on the possible applications of molybdenum oxide (Mo/MoO{sub x}) contacts in combination with semi-insulating CdTe crystals. The electrical contacts to p-type Cl-doped CdTe crystals were formed by the deposition of molybdenum oxide and pure molybdenum thin films by the DC reactive magnetron sputtering. Electrical properties of the prepared Mo-MoO{sub x}/p-CdTe/MoO{sub x}-Mo surface-barrier structures were investigated at different temperatures. It is shown that the rapid growth of the reverse current with increasing bias voltage higher than 10 V is caused by the space-charge limited currents. Spectrometric properties of the Mo-MoO{sub x}/p-CdTe/MoO{sub x}-Mo structures have been also analyzed. It is revealed that the developed heterojunction has shown promising characteristics for its practical application in X- and γ-ray radiation detector fabrication. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Rectification and tunneling effects enabled by Al2O3 atomic layer deposited on back contact of CdTe solar cells

    Science.gov (United States)

    Liang, Jun; Lin, Qinxian; Li, Hao; Su, Yantao; Yang, Xiaoyang; Wu, Zhongzhen; Zheng, Jiaxin; Wang, Xinwei; Lin, Yuan; Pan, Feng

    2015-07-01

    Atomic layer deposition (ALD) of Aluminum oxide (Al2O3) is employed to optimize the back contact of thin film CdTe solar cells. Al2O3 layers with a thickness of 0.5 nm to 5 nm are tested, and an improved efficiency, up to 12.1%, is found with the 1 nm Al2O3 deposition, compared with the efficiency of 10.7% without Al2O3 modification. The performance improvement stems from the surface modification that optimizes the rectification and tunneling of back contact. The current-voltage analysis indicates that the back contact with 1 nm Al2O3 maintains large tunneling leakage current and improves the filled factor of CdTe cells through the rectification effect. XPS and capacitance-voltage electrical measurement analysis show that the ALD-Al2O3 modification layer features a desired low-density of interface state of 8 × 1010 cm-2 by estimation.

  3. Electronic stopping power of slow H{sup +} and He{sup 2+} ions in CdTe from first principle

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chang-kai [The Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875 (China); Beijing Radiation Center, Beijing 100875 (China); Mao, Fei [School of Nuclear Science and Technology, University of South China, Hengyang 421001 (China); Fu, Yan-long; Liao, Bin [The Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875 (China); Beijing Radiation Center, Beijing 100875 (China); Ouyang, Xiao-ping [Northwest Institute of Nuclear Technology, Xi’an 710024 (China); Zhang, Feng-Shou, E-mail: fszhang@bnu.edu.cn [The Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875 (China); Beijing Radiation Center, Beijing 100875 (China); Center of Theoretical Nuclear Physics, National Laboratory of Heavy Ion Accelerator of Lanzhou, Lanzhou 730000 (China)

    2017-02-01

    We study through time-dependent density-functional theory (TDDFT) method the electronic stopping power of low-energy protons and helium ions moving through CdTe under the condition of channeling. The agreement between our calculated results and SRIM data roughly up to the stopping maximum for the proton along the 〈1 0 0〉 and 〈1 1 1〉 crystalline axes and for helium ions along 〈1 0 0〉 crystalline axis is satisfactory, which can be explained by the energy transfer mechanism that electron–hole excitation caused by ions in the solid. However, in the channel of 〈1 1 1〉 for helium ions, a transition between two velocities regimes is observed at about v = 0.4 a.u. This may be an indication of extra energy loss channel beyond the electron–hole excitation. To analyze it, we calculate the amount of electrons captured by the moving projectiles in real time. It is found that the soft transition between two velocities regimes can be attributed to the charge transfer and charge resonance between helium ion and host atoms of CdTe crystal, which are considered as additional energy loss channels.

  4. Growth and characterization of Hg/sub 1-x/Cd/sub x/Te on CdTe substrates, prepared by organometallic epitaxy

    International Nuclear Information System (INIS)

    Bhat, I.B.; Ghandhi, S.K.

    1986-01-01

    Hg/sub 1-x/Cd/sub x/Te layers have been grown on CdTe substrates using dimethylcadmium, diethyltelluride and mercury in a horizontal reactor. Details of conditions for growth of these layers are presented in this paper. Specular surfaces of Hg/sub 1-x/Cd/sub x/Te with x ≥ 0.15 were obtained on (100) 3 0 → (110) oriented CdTe substrates. Both n-type and rho-type layers could be obtained. The mobility of these layers was measured over the temperature range of 10 K to 300 K. The mobility of n-type Hg/sub .81/Cd/sub .19/Te layers, measured at 2.1 kG, was 3.0 x 10/sup 5/ cm/sup 2//V-sec at 60 K, falling to 2 x 10/sup 5/ cm/sup 2//V-sec at 10 K. P-type layers were also grown, and are described in this paper

  5. Properties of reactively sputtered oxygenated cadmium sulfide (CdS:O) and their impact on CdTe solar cell performance

    Energy Technology Data Exchange (ETDEWEB)

    Meysing, Daniel M., E-mail: dmeysing@mines.edu; Wolden, Colin A. [Chemical and Biological Engineering Department, Colorado School of Mines, 1613 Illinois St., Golden, Colorado 80401 (United States); Griffith, Michelle M. [Department of Physics, Colorado School of Mines, 1523 Illinois St., Golden, Colorado 80401 (United States); Mahabaduge, Hasitha; Pankow, Joel; Reese, Matthew O.; Burst, James M.; Rance, William L.; Barnes, Teresa M. [National Renewable Energy Laboratory, 15013 Denver West Pkwy., Golden, Colorado 80401 (United States)

    2015-03-15

    Oxygenated cadmium sulfide (CdS:O) is commonly used as the n-type window layer in high-performance CdTe heterojunction solar cells. This layer is deposited by reactive sputtering, but the optimal amount of oxygen in the sputtering ambient is highly dependent on the specific system and process employed. In this work, the intrinsic properties of CdS:O were measured as a function of the oxygen content (0%–10%) in the sputtering ambient and correlated to device performance with the goal of better defining optimal CdS:O properties for CdTe solar cells. Optimal performance was found using CdS:O films that contained ∼40 at. % oxygen as measured by Rutherford backscattering spectrometry. X-ray photoelectron spectroscopy confirmed these results and showed that oxygen is incorporated primarily as oxygenated sulfur compounds (SO{sub x}). Device efficiency improved from 10.5% using CdS to >14% with CdS:O due largely to increases in short-circuit current density as well as a modest improvement in open-circuit voltage. The transparency of the CdS:O films was well correlated with observed improvements in blue quantum efficiency with increasing oxygen content. The optical bandgap of as-deposited CdS:O was identified as a simple metric for process optimization and transfer, with 2.8 eV being ideal for the device architecture employed.

  6. Plasma kinetics and biodistribution of water-soluble CdTe quantum dots in mice: a comparison between Cd and Te

    International Nuclear Information System (INIS)

    Han Ying; Xie Guangyun; Sun Zhiwei; Mu Ying; Han Sihai; Xiao Yang; Liu Na; Wang Hui; Guo Caixia; Shi Zhixiong; Li Yanbo; Huang Peili

    2011-01-01

    Water-soluble quantum dots (QDs) have shown potential as tumor diagnostic agents. However, little is known about their biological behaviors in vivo. Male ICR mice were intravenously given a single dose (2.5 μmol kg −1 body weight) of water-soluble cadmium–telluride (CdTe) QDs (the QDs are approximately 4 nm in diameter and have maximal emission at 630 nm). Inductively coupled plasma mass spectrometry (ICP-MS) was used for measuring the kinetic action of 111 Cd and 125 Te for 7 days. The plasma kinetics of Cd and Te followed a two-compartment model, in which Cd exhibited greater apparent volume of distribution, greater clearance, faster distribution half-life, and significantly slower elimination half-life compared to Te. Contrary to its relatively transient fate in the plasma, high levels of Cd persisted in the liver and kidneys. Te accumulated primarily in the spleen. The different plasma kinetics and distribution patterns of Cd and Te imply that CdTe QDs have been part of the degradation or aggregation in vivo.

  7. MPA-capped CdTe quantum dots exposure causes neurotoxic effects in nematode Caenorhabditis elegans by affecting the transporters and receptors of glutamate, serotonin and dopamine at the genetic level, or by increasing ROS, or both

    Science.gov (United States)

    Wu, Tianshu; He, Keyu; Zhan, Qinglin; Ang, Shengjun; Ying, Jiali; Zhang, Shihan; Zhang, Ting; Xue, Yuying; Tang, Meng

    2015-12-01

    As quantum dots (QDs) are widely used in biomedical applications, the number of studies focusing on their biological properties is increasing. While several studies have attempted to evaluate the toxicity of QDs towards neural cells, the in vivo toxic effects on the nervous system and the molecular mechanisms are unclear. The aim of the present study was to investigate the neurotoxic effects and the underlying mechanisms of water-soluble cadmium telluride (CdTe) QDs capped with 3-mercaptopropionic acid (MPA) in Caenorhabditis elegans (C. elegans). Our results showed that exposure to MPA-capped CdTe QDs induced behavioral defects, including alterations to body bending, head thrashing, pharyngeal pumping and defecation intervals, as well as impaired learning and memory behavior plasticity, based on chemotaxis or thermotaxis, in a dose-, time- and size-dependent manner. Further investigations suggested that MPA-capped CdTe QDs exposure inhibited the transporters and receptors of glutamate, serotonin and dopamine in C. elegans at the genetic level within 24 h, while opposite results were observed after 72 h. Additionally, excessive reactive oxygen species (ROS) generation was observed in the CdTe QD-treated worms, which confirmed the common nanotoxicity mechanism of oxidative stress damage, and might overcome the increased gene expression of neurotransmitter transporters and receptors in C. elegans induced by long-term QD exposure, resulting in more severe behavioral impairments.

  8. Optimization of the front contact to minimize short-circuit current losses in CdTe thin-film solar cells

    Science.gov (United States)

    Kephart, Jason Michael

    With a growing population and rising standard of living, the world is in need of clean sources of energy at low cost in order to meet both economic and environmental needs. Solar energy is an abundant resource which is fundamentally adequate to meet all human energy needs. Photovoltaics are an attractive way to safely convert this energy to electricity with little to no noise, moving parts, water, or arable land. Currently, thin-film photovoltaic modules based on cadmium telluride are a low-cost solution with multiple GW/year commercial production, but have lower conversion efficiency than the dominant technology, crystalline silicon. Increasing the conversion efficiency of these panels through optimization of the electronic and optical structure of the cell can further lower the cost of these modules. The front contact of the CdTe thin-film solar cell is critical to device efficiency for three important reasons: it must transmit light to the CdTe absorber to be collected, it must form a reasonably passive interface and serve as a growth template for the CdTe, and it must allow electrons to be extracted from the CdTe. The current standard window layer material, cadmium sulfide, has a low bandgap of 2.4 eV which can block over 20% of available light from being converted to mobile charge carriers. Reducing the thickness of this layer or replacing it with a higher-bandgap material can provide a commensurate increase in device efficiency. When the CdS window is made thinner, a degradation in electronic quality of the device is observed with a reduction in open-circuit voltage and fill factor. One commonly used method to enable a thinner optimum CdS thickness is a high-resistance transparent (HRT) layer between the transparent conducting oxide electrode and window layer. The function of this layer has not been fully explained in the literature, and existing hypotheses center on the existence of pinholes in the window layer which are not consistent with observed results

  9. FY 1999 research and development of technologies for commercialization of photovoltaic power generation systems. Development of technologies for production of thin-film solar cells and low-cost, large-area modules (Development of technologies for high-reliability CdTe solar cell modules); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu (koshinraisei CdTe taiyo denchi module no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The research and development project is implemented for production of low-cost, large-area modules of CdTe solar cells by the high-quality film-making process and high-function patterning, and the FY 1999 results are reported. The research program for the large-area TCO film-making technologies involves investigations on improvement of SnO{sub 2} film quality by the mist method and continuous film-making, which lead to continuous, stable production of 34 substrates of low resistance of 9.7{omega} on the average. The program for production of the large-area, thin-film CdS/CdTe solar cells involves production of TCO and CdS by the mist method, and patterning of the laminated TCO/CdS film by laser scribing. The CdTe film is formed by the atmospheric pressure CSS method, and treated with CdCl{sub 2} to improve its crystallinity. The CdTe film is patterned by sand blasting, and provided with the carbon and silver electrodes by screen printing, to complete the cell. The process is totally effected at the atmospheric pressure, needing no vacuum device. The CdTe solar cell assembly (130 cells connected in series, opening area: 5,413cm{sup 2}), fabricated on a trial basis, achieves a conversion efficiency of 10%. (NEDO)

  10. Probing the interaction of a new synthesized CdTe quantum dots with human serum albumin and bovine serum albumin by spectroscopic methods

    International Nuclear Information System (INIS)

    Bardajee, Ghasem Rezanejade; Hooshyar, Zari

    2016-01-01

    A novel CdTe quantum dots (QDs) were prepared in aqueous phase via a facile method. At first, poly (acrylic amide) grafted onto sodium alginate (PAAm-g-SA) were successfully synthesized and then TGA capped CdTe QDs (CdTe-TGA QDs) were embed into it. The prepared CdTe-PAAm-g-SA QDs were optimized and characterized by transmission electron microscopy (TEM), thermo-gravimetric (TG) analysis, Fourier transform infrared (FT-IR), UV–vis and fluorescence spectroscopy. The characterization results indicated that CdTe-TGA QDs, with particles size of 2.90 nm, were uniformly dispersed on the chains of PAAm-g-SA biopolymer. CdTe-PAAm-g-SA QDs also exhibited excellent UV–vis absorption and high fluorescence intensity. To explore biological behavior of CdTe-PAAm-g-SA QDs, the interactions between CdTe-PAAm-g-SA QDs and human serum albumin (HSA) (or bovine serum albumin (BSA)) were investigated by cyclic voltammetry, FT-IR, UV–vis, and fluorescence spectroscopic. The results confirmed the formation of CdTe-PAAm-g-SA QDs-HSA (or BSA) complex with high binding affinities. The thermodynamic parameters (ΔG < 0, ΔH < 0 and ΔS < 0) were indicated that binding reaction was spontaneous and van der Waals interactions and hydrogen-bond interactions played a major role in stabilizing the CdTe-PAAm-g-SA QDs-HSA (or BSA) complexes. The binding distance between CdTe-PAAm-g-SA QDs and HSA (or BSA)) was calculated about 1.37 nm and 1.27 nm, respectively, according to Forster non-radiative energy transfer theory (FRET). Analyzing FT-IR spectra showed that the formation of QDs-HSA and QDs-BSA complexes led to conformational changes of the HSA and BSA proteins. All these experimental results clarified the effective transportation and elimination of CdTe-PAAm-g-SA QDs in the body by binding to HSA and BSA, which could be a useful guideline for the estimation of QDs as a drug carrier. - Highlights: • The CdTe quantum dots coated with polyacrylamide grafted onto sodium alginate. • The

  11. Probing the interaction of a new synthesized CdTe quantum dots with human serum albumin and bovine serum albumin by spectroscopic methods

    Energy Technology Data Exchange (ETDEWEB)

    Bardajee, Ghasem Rezanejade, E-mail: rezanejad@pnu.ac.ir; Hooshyar, Zari

    2016-05-01

    A novel CdTe quantum dots (QDs) were prepared in aqueous phase via a facile method. At first, poly (acrylic amide) grafted onto sodium alginate (PAAm-g-SA) were successfully synthesized and then TGA capped CdTe QDs (CdTe-TGA QDs) were embed into it. The prepared CdTe-PAAm-g-SA QDs were optimized and characterized by transmission electron microscopy (TEM), thermo-gravimetric (TG) analysis, Fourier transform infrared (FT-IR), UV–vis and fluorescence spectroscopy. The characterization results indicated that CdTe-TGA QDs, with particles size of 2.90 nm, were uniformly dispersed on the chains of PAAm-g-SA biopolymer. CdTe-PAAm-g-SA QDs also exhibited excellent UV–vis absorption and high fluorescence intensity. To explore biological behavior of CdTe-PAAm-g-SA QDs, the interactions between CdTe-PAAm-g-SA QDs and human serum albumin (HSA) (or bovine serum albumin (BSA)) were investigated by cyclic voltammetry, FT-IR, UV–vis, and fluorescence spectroscopic. The results confirmed the formation of CdTe-PAAm-g-SA QDs-HSA (or BSA) complex with high binding affinities. The thermodynamic parameters (ΔG < 0, ΔH < 0 and ΔS < 0) were indicated that binding reaction was spontaneous and van der Waals interactions and hydrogen-bond interactions played a major role in stabilizing the CdTe-PAAm-g-SA QDs-HSA (or BSA) complexes. The binding distance between CdTe-PAAm-g-SA QDs and HSA (or BSA)) was calculated about 1.37 nm and 1.27 nm, respectively, according to Forster non-radiative energy transfer theory (FRET). Analyzing FT-IR spectra showed that the formation of QDs-HSA and QDs-BSA complexes led to conformational changes of the HSA and BSA proteins. All these experimental results clarified the effective transportation and elimination of CdTe-PAAm-g-SA QDs in the body by binding to HSA and BSA, which could be a useful guideline for the estimation of QDs as a drug carrier. - Highlights: • The CdTe quantum dots coated with polyacrylamide grafted onto sodium alginate. • The

  12. Scale-Up of World Record 16.5% CdTe Cell Design for a 50 MWp Production Facility: September 27, 2007 - March 26, 2009

    Energy Technology Data Exchange (ETDEWEB)

    Seymour, F. H.

    2011-05-01

    This final report covers progress made on subcontract NAT-7-77015-07 by PrimeStar Solar Inc. for the 18 month period from September 27, 2007 through March 26, 2009. The project objectives were to accelerate the commercialization of the world record 16.5% efficiency cadmium telluride photovoltaic technology. This was done by developing high performance 6"x6" prototype mini-modules and by designing and commissioning a pilot line for manufacturing of commercial sized 60cmx120cm modules. This subcontract aligns with the SAI program by accelerating the development of high efficiency low cost CdTe solar PV module manufacturing. This will contribute to the goal of PV grid parity by 2015. Progress with the deliverables and milestones in this subcontract constitutes progress towards the KPP and milestone objectives for the SAI program.

  13. Chromatic X-ray imaging with a fine pitch CdTe sensor coupled to a large area photon counting pixel ASIC

    Science.gov (United States)

    Bellazzini, R.; Spandre, G.; Brez, A.; Minuti, M.; Pinchera, M.; Mozzo, P.

    2013-02-01

    An innovative X-ray imaging sensor based on Chromatic Photon Counting technology with intrinsic digital characteristics is presented. The system counts individually the incident X-ray photons and selects them according to their energy to produce two color images per exposure. The energy selection occurs in real time and at radiographic imaging speed (GHz global counting rate). Photon counting, color mode and a very fine spatial resolution (more than 10 LP/mm at MTF50) allow to obtain a high ratio between image quality and absorbed dose. The individual building block of the imaging system is a two-side buttable semiconductor radiation detector made of a thin pixellated CdTe crystal coupled to a large area VLSI CMOS pixel ASIC. Modules with 1, 2, 4, and 8 block units have been built. The largest module has 25 × 2.5 cm2 sensitive area. Results and images obtained from testing different modules are presented.

  14. Determination of Captopril Based on the Photoluminescence Quenching of the pH Sensitive Mercaptopropanoic Acid Capped CdTe Quantum Dots

    Science.gov (United States)

    Khan, S.; Lima, A. A.; Aucelio, R. Q.

    2017-01-01

    The determination of captopril was performed by measuring the photoluminescence quenching of pH sensitive mercaptopropanoic acid capped CdTe quantum dots. Under optimum conditions, the calibration model (log F0/F as a function of the concentration of captopril) was linear up to 8 × 10-6 mol/L (1.7 μg/mL) and the limit of detection (xb - 3sb) was 2.7 × 10-7 mol/L (18 ng/mL). A possible mechanism for quenching is proposed. The method was applied in the determination of captopril in two commercial pharmaceutical formulations, indicating that it can be used for simple and fast quantitative control of commercial medicines or pharmaceutical preparations.

  15. Physics-Based Compact Model for CIGS and CdTe Solar Cells: From Voltage-Dependent Carrier Collection to Light-Enhanced Reverse Breakdown: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Xingshu; Alam, Muhammad Ashraful; Raguse, John; Garris, Rebekah; Deline, Chris; Silverman, Timothy

    2015-10-15

    In this paper, we develop a physics-based compact model for copper indium gallium diselenide (CIGS) and cadmium telluride (CdTe) heterojunction solar cells that attributes the failure of superposition to voltage-dependent carrier collection in the absorber layer, and interprets light-enhanced reverse breakdown as a consequence of tunneling-assisted Poole-Frenkel conduction. The temperature dependence of the model is validated against both simulation and experimental data for the entire range of bias conditions. The model can be used to characterize device parameters, optimize new designs, and most importantly, predict performance and reliability of solar panels including the effects of self-heating and reverse breakdown due to partial-shading degradation.

  16. Stability issues of high-energy resolution diode type CdTe nuclear radiation detectors in a long-term operation

    CERN Document Server

    Niraula, M; Aoki, T; Tomita, Y; Hatanaka, Y

    2002-01-01

    High-energy resolution diode type CdTe detectors were fabricated by growing an n-type epitaxial layer on high resistivity p-like crystal wafers, and their stability issues during a long-term operation were studied. Room temperature stability of the detectors was not good at low operating biases of around 200 V. However, it could be improved significantly by operating them at higher biases under full depletion conditions. On the other hand, detectors exhibited excellent stability by cooling them slightly below room temperature down to 0 deg. C. The effect of this low level of cooling on detector stability was found to be more significant than that of applying high biases at room temperature. By using the detector type presented here, stable operation could be obtained at moderate operating voltages of around 400 V and with a modest degree of cooling.

  17. Band Alignment for Rectification and Tunneling Effects in Al2O3Atomic-Layer-Deposited on Back Contact for CdTe Solar Cell.

    Science.gov (United States)

    Su, Yantao; Xin, Chao; Feng, Yancong; Lin, Qinxian; Wang, Xinwei; Liang, Jun; Zheng, Jiaxin; Lin, Yuan; Pan, Feng

    2016-10-11

    The present work intends to explain why ultrathin Al 2 O 3 atomic-layer-deposited (ALD) on the back contact with rectification and tunneling effects can significantly improve the performance of CdTe solar cells in our previous work [ Liang , J. ; et al. Appl. Phys. Lett. 2015 , 107 , 013907 ]. Herein, we further study the mechanism through establishing the interfacial energy band diagram configuration of the ALD Al 2 O 3 /Cu x Te by experiment of X-ray photoelectron spectroscopy and first-principles calculations and conclude to find the band alignment with optimized layer thickness (about 1 nm ALD Al 2 O 3 ) as the key factor for rectification and tunneling effects.

  18. Co-assembly of CdTe and Fe3O4 with molecularly imprinted polymer for recognition and separation of endocrine disrupting chemicals

    International Nuclear Information System (INIS)

    Chang, Limin; Chen, Shaona; Chu, Jia; Li, Xin

    2013-01-01

    In this study, we present a general protocol to fabricate imprinting matrix co-loaded with CdTe quantum dots and Fe 3 O 4 nanoparticles for the recognition of endocrine disrupting chemicals (EDCs). The resultant composites were characterized by transmission electron microscopy, fluorescence spectroscopy, and energy dispersive spectroscopy. The materials have been demonstrated to be characterized with spherical shape with a saturation magnetization value of 1.7 emu g −1 . Furthermore, the rebinding experiments show that the resultant materials have greater affinity and selectivity towards p-nitrophenol (model EDCs) over structurally related compounds. We believe that the effective method proposed in this work might provide a platform to prepare magnetic and fluorescent molecularly imprinted polymers for the recognition and separation of EDCs.

  19. Fluorometric immunoassay for detecting the plant virus Citrus tristeza using carbon nanoparticles acting as quenchers and antibodies labeled with CdTe quantum dots

    International Nuclear Information System (INIS)

    Shojaei, Taha R.; Salleh, Mohamad A. Mohd; Sijam, Kamaruzaman; Rahim, Raha A.; Mohsenifar, Afshin; Safarnejad, Reza; Tabatabaei, Meisam

    2016-01-01

    Cadmium-telluride quantum dots (QDs) were conjugated to an antibody (Ab) against Citrus tristeza virus (CTV), while the coat protein (CP) of the CTV was immobilized on the surface of carbon nanoparticles (CNPs). Following immuno binding of the QD-Ab and the CP-loaded CNPs, the fluorescence of the CdTe QDs was quenched by the CNPs. This effect was exploited to design a detection assay for the CTV which was found more sensitive and specific than the existing enzyme linked immunosorbent assay (ELISA). The limit of detection was measured at about 220 ng⋅ mL -1 of CTV. The Stern-Volmer plot of the CNPs-QD quencher pair showed a positive deviation from linearity which was ascribed to the presence of both static and dynamic quenching. (author)

  20. The rapid prototyping of textured amorphous surfaces for the graphoepitaxial deposition of CdTe films using focused ion beam lithography

    Energy Technology Data Exchange (ETDEWEB)

    Neretina, S. [McMaster University, Department of Engineering Physics and Centre for Emerging Device Technologies, Hamilton, Ontario (Canada); Temple University, Department of Mechanical Engineering, Philadelphia, PA (United States); Hughes, R.A. [McMaster University, Brockhouse Institute for Materials Research, Hamilton, Ontario (Canada); Temple University, Department of Mechanical Engineering, Philadelphia, PA (United States); Stortz, G.; Mascher, P. [McMaster University, Department of Engineering Physics and Centre for Emerging Device Technologies, Hamilton, Ontario (Canada); Preston, J.S. [McMaster University, Department of Engineering Physics and Centre for Emerging Device Technologies, Hamilton, Ontario (Canada); McMaster University, Brockhouse Institute for Materials Research, Hamilton, Ontario (Canada)

    2011-02-15

    Cadmium telluride films deposited on amorphous substrates exhibit a grain structure characterized by [111]-oriented grains, but where the in-plane grain orientation is randomized due to the absence of epitaxy. Here, we explore the viability of promoting an in-plane grain alignment through graphoepitaxy. Fifteen different substrate surface textures were fabricated using focused ion beam lithography. This approach allows for the side-by-side deposition of surface textures where both the areal extent and depth of the surface features are varied in a systematic manner. CdTe films deposited overtop these textures show grain structures with dramatic variations, revealing that particular length scales have the most pronounced effect on the grain structure. (orig.)

  1. FTIR Spectroscopic Study of Mn(II) Oxidizing Pseudomonas putida GB1 Biofilms on ZnSe, Ge, and CdTe Crystal Surfaces

    Science.gov (United States)

    Parikh, S. J.; Gilbert, H. L.; Conklin, M. H.; Chorover, J.

    2003-12-01

    Pseudomonas putida strain GB1 is an aerobic, gram-negative bacterium capable of gaining energy from the biological oxidation of Mn(II). The increased kinetics of Mn(II) oxidation resulting from this microbial catalysis is known to contribute to the formation of Mn(IV) oxides in natural waters. Environmental conditions, including aqueous and surface chemistry, greatly affect the macromolecular composition and surface adhesion behavior of bacteria. For example, the chemistry of GB1 biofilms forming on crystal surfaces is expected to vary with Mn(II) concentration in solution. We used Fourier transform infrared (FTIR) spectroscopy to probe the formation of GB1 biofilms on the surfaces of negatively-charged IR transparent ZnSe, Ge, and CdTe crystal windows. Bacterial adhesion experiments were carried out both in the presence and absence of Mn(II)(aq) with FTIR windows suspended in a bioreactor comprising GB1 cells in a mineral growth medium at pH 7.6 and 30° C. After 85 h, windows were removed from the reactor and IR spectra were collected. Oxidation of Mn(II) was confirmed via leucoberbelin blue (LBB) indicator and the appearance of Mn-O stretches in biofilm IR spectra. Transmission FTIR spectra do not reveal detectable effects of crystal type on biofilm composition, but do indicate changes in chemistry resulting from introduction of Mn(II). In the presence of Mn(II), spectra of biofilms show higher relative intensity in the carbohydrate region (specifically 1160, 1052 cm-1). A down frequency shift in the P=O absorbance was also observed (1240 to 1222 cm-1). These results indicate a modification of bacterial cell/biofilm composition resulting during biological oxidation of Mn(II). The CdTe transmission window permits measurements to low wavenumbers (treatment. Transmission electron microscopy (TEM) of the bioreactor suspension revealed needle-like clusters of Mn oxide crystals in association with GB1 biomass and extracellular materials.

  2. Photoactivation by visible light of CdTe quantum dots for inline generation of reactive oxygen species in an automated multipumping flow system

    Energy Technology Data Exchange (ETDEWEB)

    Ribeiro, David S.M.; Frigerio, Christian; Santos, Joao L.M. [Requimte, Department of Chemical Sciences, Laboratory of Applied Chemistry, Faculty of Pharmacy, University of Porto, Rua de Jorge Viterbo Ferreira no. 228, 4050-313 Porto (Portugal); Prior, Joao A.V., E-mail: joaoavp@ff.up.pt [Requimte, Department of Chemical Sciences, Laboratory of Applied Chemistry, Faculty of Pharmacy, University of Porto, Rua de Jorge Viterbo Ferreira no. 228, 4050-313 Porto (Portugal)

    2012-07-20

    Highlights: Black-Right-Pointing-Pointer CdTe quantum dots generate free radical species upon exposure to visible radiation. Black-Right-Pointing-Pointer A high power visible LED lamp was used as photoirradiation element. Black-Right-Pointing-Pointer The laboratory-made LED photocatalytic unit was implemented inline in a MPFS. Black-Right-Pointing-Pointer Free radical species oxidize luminol producing a strong chemiluminescence emission. Black-Right-Pointing-Pointer Epinephrine scavenges free radical species quenching chemiluminescence emission. - Abstract: Quantum dots (QD) are semiconductor nanocrystals able to generate free radical species upon exposure to an electromagnetic radiation, usually in the ultraviolet wavelength range. In this work, CdTe QD were used as highly reactive oxygen species (ROS) generators for the control of pharmaceutical formulations containing epinephrine. The developed approach was based on the chemiluminometric monitoring of the quenching effect of epinephrine on the oxidation of luminol by the produced ROS. Due to the relatively low energy band-gap of this chalcogenide a high power visible light emitting diode (LED) lamp was used as photoirradiation element and assembled in a laboratory-made photocatalytic unit. Owing to the very short lifetime of ROS and to ensure both reproducible generation and time-controlled reaction implementation and development, all reactional processes were implemented inline by using an automated multipumping micro-flow system. A linear working range for epinephrine concentration of up to 2.28 Multiplication-Sign 10{sup -6} mol L{sup -1} (r = 0.9953; n = 5) was verified. The determination rate was about 79 determinations per hour and the detection limit was about 8.69 Multiplication-Sign 10{sup -8} mol L{sup -1}. The results obtained in the analysis of epinephrine pharmaceutical formulations by using the proposed methodology were in good agreement with those furnished by the reference procedure, with

  3. Fluorescence ELISA for sensitive detection of ochratoxin A based on glucose oxidase-mediated fluorescence quenching of CdTe QDs

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Yi [State Key Laboratory of Food Science and Technology, Nanchang University, Nanchang, 330047 (China); Jiangxi-OAI Joint Research Institute, Nanchang University, Nanchang 330047 (China); Huang, Xiaolin [State Key Laboratory of Food Science and Technology, Nanchang University, Nanchang, 330047 (China); Yu, Ruijin [College of Science, Northwest A& F University, Yangling, Shaanxi 712100 (China); Zhou, Yaofeng [State Key Laboratory of Food Science and Technology, Nanchang University, Nanchang, 330047 (China); Xiong, Yonghua, E-mail: yhxiongchen@163.com [State Key Laboratory of Food Science and Technology, Nanchang University, Nanchang, 330047 (China); Jiangxi-OAI Joint Research Institute, Nanchang University, Nanchang 330047 (China)

    2016-09-14

    The present study described a novel fluorescence enzyme-linked immunosorbent assay (ELISA) used to detect ochratoxin A (OTA) by using the glucose oxidase (GOx)-mediated fluorescence quenching of mercaptopropionic acid-capped CdTe quantum dots (MPA-QDs), in which GOx was used as an alternative to horseradish peroxidase (HRP) for the oxidization of glucose into hydrogen peroxide (H{sub 2}O{sub 2}) and gluconic acid. The MPA-QDs were used as a fluorescent signal output, whose fluorescence variation was extremely sensitive to the presence of H{sub 2}O{sub 2} or hydrogen ions in the solution. Under the optimized conditions, the proposed fluorescence ELISA demonstrated a good linear detection of OTA in corn extract from 2.4 pg mL{sup −1} to 625 pg mL{sup −1} with a limit of detection of 2.2 pg mL{sup −1}, which was approximately 15-fold lower than that of conventional HRP-based ELISA. Our developed fluorescence immunoassay was also similar to HRP-based ELISA in terms of selectivity, accuracy, and reproducibility. In summary, this study was the first to use the GOx-mediated fluorescence quenching of QDs in immunoassay to detect OTA, offering a new possibility for the analysis of other mycotoxins and biomolecules. - Highlights: • A novel fluorescence ELISA was first developed for the detection of OTA by using GOx-mediated fluorescence quenching of QDs. • The pH- and H{sub 2}O{sub 2}-sensitive MPA-capped CdTe QDs were used as a fluorescent signal output to improve the detection sensitivity. • This novel method open up a different vision to detect other mycotoxins and biomolecules.

  4. Development of a 32-detector CdTe matrix for the SVOM ECLAIRs x/gamma camera: tests results of first flight models

    Science.gov (United States)

    Lacombe, K.; Dezalay, J.-P.; Houret, B.; Amoros, C.; Atteia, J.-L.; Aubaret, K.; Billot, M.; Bordon, S.; Cordier, B.; Delaigue, S.; Galliano, M.; Gevin, O.; Godet, O.; Gonzalez, F.; Guillemot, Ph.; Limousin, O.; Mercier, K.; Nasser, G.; Pons, R.; Rambaud, D.; Ramon, P.; Waegebaert, V.

    2016-07-01

    ECLAIRs, a 2-D coded-mask imaging camera on-board the Sino-French SVOM space mission, will detect and locate gamma-ray bursts in near real time in the 4 - 150 keV energy band in a large field of view. The design of ECLAIRs has been driven by the objective to reach an unprecedented low-energy threshold of 4 keV. The detection plane is an assembly of 6400 Schottky CdTe detectors of size 4x4x1 mm3, biased from -200V to -500V and operated at -20°C. The low-energy threshold is achieved thanks to an innovative hybrid module composed of a thick film ceramic holding 32 CdTe detectors ("Detectors Ceramics"), associated to an HTCC ceramic housing a low-noise 32-channel ASIC ("ASIC Ceramics"). We manage the coupling between Detectors Ceramics and ASIC Ceramics in order to achieve the best performance and ensure the uniformity of the detection plane. In this paper, we describe the complete hybrid XRDPIX, of which 50 flight models have been manufactured by the SAGEM company. Afterwards, we show test results obtained on Detectors Ceramics, on ASIC Ceramics and on the modules once assembled. Then, we compare and confront detectors leakage currents and ASIC ENC with the energy threshold values and FWHM measured on XRDPIX modules at the temperature of -20°C by using a calibrated radioactive source of 241Am. Finally, we study the homogeneity of the spectral properties of the 32-detector hybrid matrices and we conclude on general performance of more than 1000 detection channels which may reach the lowenergy threshold of 4 keV required for the future ECLAIRs space camera.

  5. CdTe quantum dots-sensitized solar cells featuring PCBM/P3HT as hole transport material and assistant sensitizer provide 3.40% efficiency

    International Nuclear Information System (INIS)

    Yue Gentian; Wu Jihuai; Xiao Yaoming; Lin Jianming; Huang Miaoliang; Lan Zhang; Fan Leqing

    2012-01-01

    Highlights: ► A CdTe QD-sensitized solar cell was fabricated by using PCBM/P3HT heterojunction. ► The QDSSC shows a light-to-electric energy conversion efficiency of 3.40%. ► Microporous Pt/C 60 film is better than Pt film as counter electrode for the QDSSC. ► PCBM/P3HT is better than I − /I 3 − and S 2− /S x as transferring medium for the QDSSC. - Abstract: A heterojunction consisted of [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) and poly(3-hexylthiophene) (P3HT) was employed as hole transporter and light absorber assistant, a microporous platinum/fullerenes (Pt/C 60 ) counter electrode was prepared by using a facile thermal decomposition method, and a polydimethyldiallyl ammonium–cadmium telluride [(PDDA)–CdTe] quantum dots photoanode was prepared by using chemical bath deposition method. Based on above components, a CdTe quantum dot-sensitized solar cell (QDSSC) was fabricated. The QDSSC shows a light-to-electric energy conversion efficiency of 3.40% under a simulated solar light irradiation with an intensity of 100 mW cm −2 . The electrochemical and photovoltaic measurements indicate that microporous Pt/C 60 film is better than Pt film as counter electrode material for the QDSSCs, and PCBM/P3HT is better than iodide/triiodide and sulfide/polysulfide as transferring medium for QDSSCs.

  6. Comparison of efficiency degradation in polycrystalline-Si and CdTe thin-film PV modules via accelerated lifecycle testing

    Science.gov (United States)

    Lai, T.; Potter, B. G.; Simmons-Potter, K.

    2017-08-01

    Thin-film solar cells normally have the shortest energy payback time due to their simpler mass-production process compared to polycrystalline-Si photovoltaic (PV) modules, despite the fact that crystalline-Si-based technology typically has a longer total lifetime and a higher initial power conversion efficiency. For both types of modules, significant aging occurs during the first two years of usage with slower long-term aging over the module lifetime. The PV lifetime and the return-on-investment for local PV system installations rely on long-term device performance. Understanding the efficiency degradation behavior under a given set of environmental conditions is, therefore, a primary goal for experimental research and economic analysis. In the present work, in-situ measurements of key electrical characteristics (J, V, Pmax, etc.) in polycrystalline-Si and CdTe thin-film PV modules have been analyzed. The modules were subjected to identical environmental conditions, representative of southern Arizona, in a full-scale, industrial-standard, environmental degradation chamber, equipped with a single-sun irradiance source, temperature, and humidity controls, and operating an accelerated lifecycle test (ALT) sequence. Initial results highlight differences in module performance with environmental conditions, including temperature de-rating effects, for the two technologies. Notably, the thin-film CdTe PV module was shown to be approximately 15% less sensitive to ambient temperature variation. After exposure to a seven-month equivalent compressed night-day weather cycling regimen the efficiency degradation rates of both PV technology types were obtained and will be discussed.

  7. Insights into the effect of N-acetyl-L-cysteine-capped CdTe quantum dots on the structure and activity of human serum albumin by spectroscopic techniques

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Haoyu; Yang, Xudan; Li, Meng; Han, Songlin; Liu, Yingxue [School of Environmental Science and Engineering, Shandong University, China-America CRC for Environment & Health, Shandong Province, 27# Shanda South Road, Jinan 250100 (China); Tan, Xuejie [School of Chemistry and Pharmaceutical Engineering, Qilu University of Technology, Jinan, Shandong Province 250353 (China); Liu, Chunguang, E-mail: chunguangliu2013@sdu.edu.cn [School of Environmental Science and Engineering, Shandong University, China-America CRC for Environment & Health, Shandong Province, 27# Shanda South Road, Jinan 250100 (China); Liu, Rutao [School of Environmental Science and Engineering, Shandong University, China-America CRC for Environment & Health, Shandong Province, 27# Shanda South Road, Jinan 250100 (China)

    2015-11-15

    Quantum dots (QDs) are a kind of nanostructured semiconductor crystals with the size range of 1–10 nm. Their unique photophysical properties and potential toxicity to human health have aroused wide concern of scientists and general public. However, the interaction mechanism of QDs on human serum albumin (HSA, the vital protein in human blood) from both structural and functional perspectives is rarely reported. In the present work, effects of N-acetyl-L-cysteine-capped CdTe quantum dots with fluorescence emission peak at 612 nm (QDs-612) on the conformation and function of HSA were investigated by spectroscopic methods, molecular docking study and esterase activity assay. The hydrophobic interaction between HSA and QDs-612 was spontaneous with the binding constants calculated to be 6.85×10{sup 5} L mol{sup −1} (298 K) and 8.89×10{sup 5} L mol{sup −1} (308 K). The binding of QDs-612 to HSA induced the static quenching of fluorescence and the changes of secondary structure and microenvironment of Tyr-411 residue, which resulted in serious decrease on the hydrolysis of substrate p-nitrophenylacetate in esterase activity assay of HSA. This work confirms the possibility on direct interaction of QDs-612 with HSA and obtains a possible mechanism of relationship between conformation and function of HSA. - Highlights: • The interaction between CdTe QDs (QDs-612) and HSA is spontaneous. • The predominant force of the binding is hydrophobic interaction. • The interaction changes the secondary structure of HSA. • Tyr-411 residue of HSA expose to a hydrophilic environment. • The esterase activity of HSA decreases by adding QDs-612.

  8. High Throughput Manufacturing of Thin-Film CdTe Photovoltaic Materials; Final Subcontract Report, 16 November 1993-31 December 1998

    International Nuclear Information System (INIS)

    Sandwisch, D.W.

    1999-01-01

    This report describes work performed by Solar Cells, Inc. (SCI), during this Photovoltaic Manufacturing Technology (PVMaT) subcontract. Cadmium telluride (CdTe) is recognized as one of the leading materials for low-cost photovoltaic modules. SCI has developed this technology and is preparing to scale its pilot production capabilities to a multi-megawatt level. This four-phase PVMaT subcontract supports these efforts. The work was related to product definition, process definition, equipment engineering, and support programs development. In the area of product definition and demonstration, two products were specified and demonstrated-a grid-connected, frameless, high-voltage product that incorporates a pigtail potting design and a remote low-voltage product that may be framed and may incorporate a junction box. SCI produced a 60.3-W thin-film CdTe module with total-area efficiency of 8.4%; SCI also improved module pass rate on the interim qualification test protocol from less than 20% to 100% as a result of work related to the subcontract. In the manufacturing process definition area, the multi-megawatt manufacturing process was defined, several of the key processes were demonstrated, and the process was refined and proven on a 100-kW pilot line that now operates as a 250-kW line. In the area of multi-megawatt manufacturing-line conceptual design review, SCI completed a conceptual layout of the multi-megawatt lines. The layout models the manufacturing line and predicts manufacturing costs. SCI projected an optimized capacity, two-shift/day operation of greater than 25 MW at a manufacturing cost of below$1.00/W

  9. Applicability of a portable CdTe and NaI (Tl) spectrometer for activity measure; Aplicabilidade de um espectrometro portatil de CdTe e NaI (Tl) para a medida da atividade de Cesio-137 ({sup 137}Cs) e Berilio-7 ({sup 7}Be)

    Energy Technology Data Exchange (ETDEWEB)

    Fernandes, Jaquiel Salvi

    2005-02-15

    In this work it was studied the application of an in situ gamma spectrometer (ROVER) of Amptek Inc., composed by a Cadmium Telluride detector (CdTe) of 3 mm x 3 mm x 1 mm and a 30 mm x 30 mm Sodium Iodide detector doped with Thallium [NaI (Tl)). The radioactive sources used were type pastille, sealed in aluminum and polyethylene, of {sup 241}Am, {sup 133}Ba, {sup 152}Eu, 3 sources of {sup 137}Cs and soil samples contaminated with {sup 137}Cs. It was performed a factorial planning 2{sup 3} to optimize the in situ spectrometry system. This way it was determined that the best temperature for CdTe crystal operation is -22, deg C, with Shaping Time of 3 {mu}S and Rise Time Discrimination (RTD) with value 3. With the help of the certified radioactive sources, we determined the efficiency curve of the two detectors. The CdTe detector was positioned at the standard distance of 1 meter of the sources and also at 4.15 cm. The NaI (Tl) detector was also positioned at the standard distance of 1 meter of the sources and at 2.8 cm. Measures were performed to determine the Minimum Detectable Activity (MDA) for both detectors. For the pastille type sources, the {sup 137}Cs MDA for the CdTe detector at 4.15 cm, analyzing the energy line of 32 keV, was 6 kBq and at 1 meter of the {sup 137}Cs source, analyzing the line of 661.65 keV, the MDA was 67 kBq. For soil samples, CdTe detector at 4.15 cm presented a MDA of 693 kBq.kg-l for the line of 32 keV, and for the soil sample {sup 7}Be content the MDA found was 2867 Bq.kg{sup -1} at 4.15 cm. For the NaI (Tl) detector, analyzing the line of 661.65 keV, the {sup 137}Cs MDA for pastille type source at 1 meter of distance was 7 kBq, and for soil sample at 2.8 cm the measured {sup 137}Cs MDA was 71 Bq.kg{sup -1}. For the soil sample {sup 7}Be content, at 2.8 cm of the Nal (Tl) detector, the obtained MDA was 91 Bq.kg{sup -1}. Due to the minimum detectable activities found for the two detectors, we concluded that the employed in situ gamma

  10. Enhancing the output current of a CdTe solar cell via a CN-free hydrocarbon luminescent down-shifting fluorophore with intramolecular energy transfer and restricted internal rotation characteristics.

    Science.gov (United States)

    Li, Yilin; Olsen, Joseph; Dong, Wen-Ji

    2015-04-01

    A CN-free hydrocarbon fluorophore (Perylene-TPE) was synthesized as a new luminescent down-shifting (LDS) material. Its photophysical properties in both the solution state and the solid state were studied. The unity fluorescence quantum yield of Perylene-TPE observed in its solid state is considered to be from the characteristics of intramolecular energy transfer (IET) and restricted internal rotation (RIR). This is supported by the results from theoretical calculations and spectroscopic measurements. For the photovoltaic application of Perylene-TPE, a theoretical modeling study suggests that using the LDS film of Perylene-TPE may increase the output short circuit current density (Jsc) of a CdTe solar cell by 2.95%, enhance the spectral response of a CdTe solar cell at 400 nm by 41%, and shift the incident solar photon distribution from short-wavelength (500 nm). Experimentally, placing a LDS film of Perylene-TPE on a CdTe solar cell can enhance its output Jsc by as high as 3.30 ± 0.31%, which is comparable to the current commercially available LDS material – Y083 (3.28% ± 0.37%).

  11. How grain boundaries affect the efficiency of poly-CdTe solar-cells: A fundamental atomic-scale study of grain boundary dislocation cores using CdTe bi-crystal thin films.

    Energy Technology Data Exchange (ETDEWEB)

    Klie, Robert [Univ. of Illinois, Chicago, IL (United States)

    2016-10-25

    It is now widely accepted that grain boundaries in poly-crystalline CdTe thin film devices have a detrimental effect on the minority carrier lifetimes, the open circuit voltage and therefore the overall solar-cell performance. The goal of this project was to develop a fundamental understanding of the role of grain boundaries in CdTe on the carrier life-time, open-circuit voltage, Voc, and the diffusion of impurities. To achieve this goal, i) CdTe bi-crystals were fabricated with various misorientation angels, ii) the atomic- and electronic structures of the grain boundaries were characterized using scanning transmission electron microscopy (STEM), and iii) first-principles density functional theory modeling was performed on the structures determined by STEM to predict the grain boundary potential. The transport properties and minority carrier lifetimes of the bi-crystal grain boundaries were measured using a variety of approaches, including TRPL, and provided feedback to the characterization and modeling effort about the effectiveness of the proposed models.

  12. Achievement report for fiscal 1997 on development of technologies for practical photovoltaic system under New Sunshine Program. Manufacture of thin-film solar cell and of low-cost/large-area module (Manufacture of high-reliability CdTe solar module); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module seizo gijutsu kaihatsu (koshinraisei CdTe taiyo denchi module no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    The target is a low-cost CdS/CdTe solar cell of a large area (60cm times 90cm), the establishment of mass-production technologies for the cell, and the enhancement of production efficiency. A thin film formation technology of subjecting CdS film organic metal to pyrolysis is established, which reduces photoabsorption loss in the shortwave domain of wavelength of not longer than 500nm, reduces reflection loss in the film, and improves on short-circuit current density. Improvement is also achieved on CdTe film quality and junction quality by use of a proximity sublimation method in a vacuum, when a conversion rate of 16.0% (1cm{sup 2}) is attained which is the highest in the world. Based on the results of the above-said efforts, a 3.3mm-thick glass substrate is employed for CdTe film to develop into a 30cm times 60cm-large size, with the film thereon uniformly thick over a large area thanks to a normal pressure proximity sublimation method. Studies are made toward a process nearer to the ultimate product and, using the patterning technique, a 30cm times 60cm-large CdTe solar cell is tentatively built realizing a conversion rate of 9.8%. (NEDO)

  13. Fabrication of L-cysteine-capped CdTe quantum dots based ratiometric fluorescence nanosensor for onsite visual determination of trace TNT explosive

    Energy Technology Data Exchange (ETDEWEB)

    Qian, Jing; Hua, Mengjuan [School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013 (China); Wang, Chengquan [Changzhou College of Information Technology, Changzhou 213164 (China); Wang, Kan; Liu, Qian; Hao, Nan [School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013 (China); Wang, Kun, E-mail: wangkun@ujs.edu.cn [School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013 (China)

    2016-11-23

    New strategies for onsite determination of trace 2,4,6-trinitrotoluene (TNT) explosives have become a research hotspot for homeland security needs against terrorism and environmental concerns. Herein, we designed a ratiometric fluorescence nanohybrid comprising 3-mercaptopropionic acid-capped green-emitting CdTe quantum dots (gQDs) encapsulated into SiO{sub 2} sphere and L-cysteine (Lcys)-capped red-emitting CdTe QDs (rQDs) conjugated onto SiO{sub 2} surface. The surface Lcys can be used as not only the stabilizer of the rQDs but also the primary amine provider which can react with TNT to form Meisenheimer complexes. Without any additional surface modification procedure, the fluorescence of rQDs equipped with Lcys was selectively quenched by TNT because electrons of the rQDs transferred to TNT molecules due to the formation of Meisenheimer complexes. Meanwhile, the embedded gQDs always remained constant. Upon exposure to increasing amounts of TNT, the fluorescence of rQDs could be gradually quenched and consequently the logarithm of the dual emission intensity ratios exhibited a good linear negative correlation with TNT concentration over a range of 10 nM–8 μM with a low detection limit of 3.3 nM. One can perform onsite visual determination of TNT with high resolution because the ratiometric fluorescence nanosensing system exhibited obvious fluorescence color changes. This sensing strategy has been successfully applied in real samples and already integrated in a filter paper-based assay, which enables potential fields use application featuring easy handling and cost-effectiveness. - Highlights: • A facile strategy for preparing Lcys-capped rQDs based hybrid spheres was reported. • Lcys serves as the stabilizer of rQDs and primary amine provider to react with TNT. • One can perform onsite visual determination of TNT by using such probe. • The nanosensor exhibited a wide linear range and a low detection limit. • This sensing strategy can be fully

  14. A Monte Carlo simulation study of an improved K-edge log-subtraction X-ray imaging using a photon counting CdTe detector

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Youngjin, E-mail: radioyoungj@gmail.com [Department of Radiological Science, Eulji University, 553, Sanseong-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do (Korea, Republic of); Lee, Amy Candy [Department of Mathematics and Statistics, McGill University (Canada); Kim, Hee-Joung [Department of Radiological Science and Radiation Convergence Engineering, Yonsei University (Korea, Republic of)

    2016-09-11

    Recently, significant effort has been spent on the development of photons counting detector (PCD) based on a CdTe for applications in X-ray imaging system. The motivation of developing PCDs is higher image quality. Especially, the K-edge subtraction (KES) imaging technique using a PCD is able to improve image quality and useful for increasing the contrast resolution of a target material by utilizing contrast agent. Based on above-mentioned technique, we presented an idea for an improved K-edge log-subtraction (KELS) imaging technique. The KELS imaging technique based on the PCDs can be realized by using different subtraction energy width of the energy window. In this study, the effects of the KELS imaging technique and subtraction energy width of the energy window was investigated with respect to the contrast, standard deviation, and CNR with a Monte Carlo simulation. We simulated the PCD X-ray imaging system based on a CdTe and polymethylmethacrylate (PMMA) phantom which consists of the various iodine contrast agents. To acquired KELS images, images of the phantom using above and below the iodine contrast agent K-edge absorption energy (33.2 keV) have been acquired at different energy range. According to the results, the contrast and standard deviation were decreased, when subtraction energy width of the energy window is increased. Also, the CNR using a KELS imaging technique is higher than that of the images acquired by using whole energy range. Especially, the maximum differences of CNR between whole energy range and KELS images using a 1, 2, and 3 mm diameter iodine contrast agent were acquired 11.33, 8.73, and 8.29 times, respectively. Additionally, the optimum subtraction energy width of the energy window can be acquired at 5, 4, and 3 keV for the 1, 2, and 3 mm diameter iodine contrast agent, respectively. In conclusion, we successfully established an improved KELS imaging technique and optimized subtraction energy width of the energy window, and based on

  15. Study of the interaction of flavonoids with 3-mercaptopropionic acid modified CdTe quantum dots mediated by cetyltrimethyl ammonium bromide in aqueous medium

    Science.gov (United States)

    Aucelio, Ricardo Q.; Carvalho, Juliana M.; Real, Juliana T.; Maqueira-Espinosa, Luis; Pérez-Gramatges, Aurora; da Silva, Andrea R.

    2017-02-01

    Flavonoids are polyphenols that help the maintenance of health, aiding the prevention of diseases. In this work, CdTe QDs coated with 3-mercaptopropionic acid (3MPA), with an average size of 2.7 nm, were used as photoluminescence probe for flavonoids in different conditions. The interaction between 14 flavonoids and QDs was evaluated in aqueous dispersions in the absence and in the presence of cetyltrimethylammonium bromide (CTAB). To establish a relationship between photoluminescence quenching and the concentration of flavonoids, the Stern-Volmer model was used. In the absence of CTAB, the linear ranges for quercetin, morin and rutin were from 5.0 × 10- 6 mol L- 1 to 6.0 × 10- 5 mol L- 1 and from 1.0 × 10- 5 mol L- 1 to 6.0 × 10- 4 mol L- 1 for kaempferol. The sensibility of the Stern-Volmer curves (Ks) indicated that quercetin interacts more strongly with the probe: Ks quercetin > Ks kaempferol > Ks rutin > Ks morin. The conjugation extension in the 3 rings, and the acidic hydroxyl groups (positions 3ʹand 4ʹ) in the B-ring enhanced the interaction with 3MPA-CdTe QDs. The other flavonoids do not interact with the probe at 10- 5 mol L- 1 level. In CTAB organized dispersions, Ks 3-hydroxyflavone > Ks 7-hydroxyflavone > Ks flavona > Ks rutin in the range from 1.0 × 10- 6 mol L- 1 to 1.2 × 10- 5 mol L- 1 for flavones and of 1.0 × 10- 6 mol L- 1 to 1.0 × 10- 5 mol L- 1 for rutin. Dynamic light scattering, conductometric measurements and microenvironment polarity studies were employed to elucidate the QDs-flavonoids interaction in systems containing CTAB. The quenching can be attributed to the preferential solubility of hydrophobic flavonoid in the palisade layer of the CTAB aggregates adsorbed on the surface of the 3MPA CdTe QDs.

  16. An analytical X-ray CdTe detector response matrix for incomplete charge collection correction for photon energies up to 300 keV

    Science.gov (United States)

    Kurková, Dana; Judas, Libor

    2018-05-01

    Gamma and X-ray energy spectra measured with semiconductor detectors suffer from various distortions, one of them being so-called "tailing" caused by an incomplete charge collection. Using the Hecht equation, a response matrix of size 321 × 321 was constructed which was used to correct the effect of incomplete charge collection. The correction matrix was constructed analytically for an arbitrary energy bin and the size of the energy bin thus defines the width of the spectral window. The correction matrix can be applied separately from other possible spectral corrections or it can be incorporated into an already existing response matrix of the detector. The correction was tested and its adjustable parameters were optimized on the line spectra of 57Co measured with a cadmium telluride (CdTe) detector in a spectral range from 0 up to 160 keV. The best results were obtained when the values of the free path of holes were spread over a range from 0.4 to 1.0 cm and weighted by a Gauss function. The model with the optimized parameter values was then used to correct the line spectra of 152Eu in a spectral range from 0 up to 530 keV. An improvement in the energy resolution at full width at half maximum from 2.40 % ± 0.28 % to 0.96 % ± 0.28 % was achieved at 344.27 keV. Spectra of "narrow spectrum series" beams, N120, N150, N200, N250 and N300, generated with tube voltages of 120 kV, 150 kV, 200 kV, 250 kV and 300 kV respectively, and measured with the CdTe detector, were corrected in the spectral range from 0 to 160 keV (N120 and N150) and from 0 to 530 keV (N200, N250, N300). All the measured spectra correspond both qualitatively and quantitatively to the available reference data after the correction. To obtain better correspondence between N150, N200, N250 and N300 spectra and the reference data, lower values of the free paths of holes (range from 0.16 to 0.65 cm) were used for X-ray spectra correction, which suggests energy dependence of the phenomenon.

  17. A Monte Carlo simulation study of an improved K-edge log-subtraction X-ray imaging using a photon counting CdTe detector

    International Nuclear Information System (INIS)

    Lee, Youngjin; Lee, Amy Candy; Kim, Hee-Joung

    2016-01-01

    Recently, significant effort has been spent on the development of photons counting detector (PCD) based on a CdTe for applications in X-ray imaging system. The motivation of developing PCDs is higher image quality. Especially, the K-edge subtraction (KES) imaging technique using a PCD is able to improve image quality and useful for increasing the contrast resolution of a target material by utilizing contrast agent. Based on above-mentioned technique, we presented an idea for an improved K-edge log-subtraction (KELS) imaging technique. The KELS imaging technique based on the PCDs can be realized by using different subtraction energy width of the energy window. In this study, the effects of the KELS imaging technique and subtraction energy width of the energy window was investigated with respect to the contrast, standard deviation, and CNR with a Monte Carlo simulation. We simulated the PCD X-ray imaging system based on a CdTe and polymethylmethacrylate (PMMA) phantom which consists of the various iodine contrast agents. To acquired KELS images, images of the phantom using above and below the iodine contrast agent K-edge absorption energy (33.2 keV) have been acquired at different energy range. According to the results, the contrast and standard deviation were decreased, when subtraction energy width of the energy window is increased. Also, the CNR using a KELS imaging technique is higher than that of the images acquired by using whole energy range. Especially, the maximum differences of CNR between whole energy range and KELS images using a 1, 2, and 3 mm diameter iodine contrast agent were acquired 11.33, 8.73, and 8.29 times, respectively. Additionally, the optimum subtraction energy width of the energy window can be acquired at 5, 4, and 3 keV for the 1, 2, and 3 mm diameter iodine contrast agent, respectively. In conclusion, we successfully established an improved KELS imaging technique and optimized subtraction energy width of the energy window, and based on

  18. Long-term exposure of CdTe quantum dots on PC12 cellular activity and the determination of optimum non-toxic concentrations for biological use

    Directory of Open Access Journals (Sweden)

    Gérard Valérie A

    2010-03-01

    Full Text Available Abstract Background The unique and tuneable photonic properties of Quantum Dots (QDs have made them potentially useful tools for imaging biological entities. However, QDs though attractive diagnostic and therapeutic tools, have a major disadvantage due to their inherent cytotoxic nature. The cellular interaction, uptake and resultant toxic influence of CdTe QDs (gelatinised and non-gelatinised Thioglycolic acid (TGA capped have been investigated with pheochromocytoma 12 (PC12 cells. In conjunction to their analysis by confocal microscopy, the QD - cell interplay was explored as the QD concentrations were varied over extended (up to 72 hours co-incubation times. Coupled to this investigation, cell viability, DNA quantification and cell proliferation assays were also performed to compare and contrast the various factors leading to cell stress and ultimately death. Results Thioglycolic acid (TGA stabilised CdTe QDs (gel and non - gel were co-incubated with PC12 cells and investigated as to how their presence influenced cell behaviour and function. Cell morphology was analysed as the QD concentrations were varied over co-incubations up to 72 hours. The QDs were found to be excellent fluorophores, illuminating the cytoplasm of the cells and no deleterious effects were witnessed at concentrations of ~10-9 M. Three assays were utilised to probe how individual cell functions (viability, DNA quantification and proliferation were affected by the presence of the QDs at various concentrations and incubation times. Cell response was found to not only be concentration dependant but also influenced by the surface environment of the QDs. Gelatine capping on the surface acts as a barrier towards the leaking of toxic atoms, thus reducing the negative impact of the QDs. Conclusion This study has shown that under the correct conditions, QDs can be routinely used for the imaging of PC12 cells with minimal adverse effects. We have found that PC12 cells are highly

  19. Long-term exposure of CdTe quantum dots on PC12 cellular activity and the determination of optimum non-toxic concentrations for biological use

    LENUS (Irish Health Repository)

    Prasad, Babu R

    2010-03-25

    Abstract Background The unique and tuneable photonic properties of Quantum Dots (QDs) have made them potentially useful tools for imaging biological entities. However, QDs though attractive diagnostic and therapeutic tools, have a major disadvantage due to their inherent cytotoxic nature. The cellular interaction, uptake and resultant toxic influence of CdTe QDs (gelatinised and non-gelatinised Thioglycolic acid (TGA) capped) have been investigated with pheochromocytoma 12 (PC12) cells. In conjunction to their analysis by confocal microscopy, the QD - cell interplay was explored as the QD concentrations were varied over extended (up to 72 hours) co-incubation times. Coupled to this investigation, cell viability, DNA quantification and cell proliferation assays were also performed to compare and contrast the various factors leading to cell stress and ultimately death. Results Thioglycolic acid (TGA) stabilised CdTe QDs (gel and non - gel) were co-incubated with PC12 cells and investigated as to how their presence influenced cell behaviour and function. Cell morphology was analysed as the QD concentrations were varied over co-incubations up to 72 hours. The QDs were found to be excellent fluorophores, illuminating the cytoplasm of the cells and no deleterious effects were witnessed at concentrations of ~10-9 M. Three assays were utilised to probe how individual cell functions (viability, DNA quantification and proliferation) were affected by the presence of the QDs at various concentrations and incubation times. Cell response was found to not only be concentration dependant but also influenced by the surface environment of the QDs. Gelatine capping on the surface acts as a barrier towards the leaking of toxic atoms, thus reducing the negative impact of the QDs. Conclusion This study has shown that under the correct conditions, QDs can be routinely used for the imaging of PC12 cells with minimal adverse effects. We have found that PC12 cells are highly susceptible to

  20. Alternative collimator for CdTe (model XR-100T), when it is used for a direct measurements of radiodiagnostic spectra; Colimador alternativo para um detector de CdTe (modelo XR-100T), usado em medidas diretas de espectros de radiodiagnostico

    Energy Technology Data Exchange (ETDEWEB)

    Soares, C.; Guevara, M.V. Manso; Milian, F. Mas; Garcia, F., E-mail: mvictoria.mansoguevara@gmail.com [Universidade Estadual de Santa Cruz (CPqCTR/UESC), Ilheus, BA (Brazil). Departamento de Ciencias Exatas; Nieto, L. [Universidade Estadual do Sudoeste da Bahia (UESB), Itapetinga, BA (Brazil)

    2014-01-15

    The spectrum simulation is a powerful instrument of great practical and pedagogical usefulness, because it helps to understand the technical and the instrumental limits of parameters in optimized measurements of magnitudes of interest in physics. Monte Carlo models, based on particle and radiation transport, provide easy and flexible tools for simulating complex geometries and materials. Particularly, MCNPX code is used to compare, manipulate, and quantify simulated and measured spectra. The purpose of this work is to use this tool set to estimate the characteristics of a collimation device, avoiding permanent and temporary damages into the diode-pin detector, during direct measurements of the Bremsstrahlung's spectrum, which was generated from diagnosis tubes with medical purpose. The simulations were made with a maximum voltage of 150 kVp, and typical charges used in radiological protocols in the medical area. Also, differential high pulse spectra, simulated and measured with a CdTe Detector, are reported. (author)

  1. CdTe and EDS HR-PIXE Ta L and M spectra induced by duoplasmatron generated proton and oxygen ion beams

    Science.gov (United States)

    Reis, M. A.; Chaves, P. C.

    2018-02-01

    Particle induced X-ray emission (PIXE) is a powerful technique for quantitative analysis because it is non-destructive, multi-elemental (from Na to U), highly sensitive and requires no special sample preparation. Heavy Ions PIXE (HI-PIXE), may represent a further step in versatility but it comes with added complexity of the physical processes involved in X-ray production, which require among other things new software capabilities. In this work, the specific capacities of the DT2 code are used to simulate and fit Ta L- and M-shell spectra obtained during the irradiation of a Ta2O5 thin film deposited upon a polished vitreous graphite substrate, produced in the frame of the Heavy Ions PIXE workpakage of the IAEA Coordinated Research Project F11019 on analytical uses of MeV focused ion beams. Proton and oxygen beams from a duoplasmatron ion source were used, and spectra were collected using both the CdTe and the X-ray Microcalorimeter Spectrometer detectors of the High Resolution High X-ray Energy PIXE (HRHE-PIXE) facility of C2TN. Results obtained from the simulation and the fitting of these spectra are presented and discussed.

  2. Research Leading to High Throughput Manufacturing of Thin-Film CdTe PV Modules: Annual Technical Report, September 2003-September 2004

    Energy Technology Data Exchange (ETDEWEB)

    Powell, R. C.

    2004-12-01

    First Solar is actively commercializing CdTe-based thin-film photovoltaics. During the past year, major additions of production capability have been completed, as well as process improvements to achieve higher throughput and efficiency and greater durability. This report presents the results of Phase II of the subcontract, entitled ''Research Leading to High Throughput Manufacturing of Thin-Film CdTe PV Modules.'' The subcontract supports several important aspects needed for high-volume manufacturing of high-efficiency modules, including exploration of large-area advanced front-contact window layers, improvements of the semiconductor deposition system, advancement in understanding of post-deposition processing steps and accelerated life testing methods, and progress in the environmental, health and safety programs. Work under this subcontract contributes to the overall manufacturing operation. During Phase II, average module efficiency (total area) on the production line was improved from 7.9% to 8.6% due primarily to process optimization. At the same, time production volume for commercial sales increased from 2.5 MW in 2003 to an estimated 6 MW in 2004. Much of the new 25 MW/yr production line has been qualified, and production volume is steadily increasing.

  3. High-speed imaging at high x-ray energy: CdTe sensors coupled to charge-integrating pixel array detectors

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Julian; Tate, Mark W.; Shanks, Katherine S.; Philipp, Hugh T.; Weiss, Joel T.; Purohit, Prafull [Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Chamberlain, Darol [Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY 14853 (United States); Gruner, Sol M., E-mail: smg26@cornell.edu [Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY 14853 (United States)

    2016-07-27

    Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we describe the hybridization of CdTe sensors to two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame, in-pixel storage elements with framing periods <150 ns. The second detector, the MM-PAD, has an extended dynamic range by utilizing an in-pixel overflow counter coupled with charge removal circuitry activated at each overflow. This allows the recording of signals from the single-photon level to tens of millions of x-rays/pixel/frame while framing at 1 kHz. Both detector chips consist of a 128×128 pixel array with (150 µm){sup 2} pixels.

  4. A global method for handling fluorescence spectra at high concentration derived from the competition between emission and absorption of colloidal CdTe quantum dots.

    Science.gov (United States)

    Noblet, Thomas; Dreesen, Laurent; Hottechamps, Julie; Humbert, Christophe

    2017-10-11

    We investigate the effects of the concentration of CdTe quantum dots (QDs) on their fluorescence in water. The emission spectra, acquired in right angle geometry, exhibit highly variable shapes. The measurements evidence a critical value of the concentration beyond which the intensity and the spectral bandwidth decrease and the fluorescence maximum is redshifted. To account for these observations, we develop a model based on the primary and secondary inner filter effects. The accuracy of the model ensures that the concentration dependent behaviour of QD fluorescence is completely due to inner filter effects. This result is all the more interesting because it precludes the assumption of dynamic quenching. As a matter of fact, the decrease of the emission intensity is not a consequence of collisional quenching but an effect of competition between fluorescence and absorption. We even show that this phenomenon is linked not only to the QD concentration but also to the geometric configuration of the setup. Hence, our analytical model can be easily adapted to every fluorescence spectroscopy configuration to quantitatively predict or correct inner filter effects in the case of QDs or any fluorophore, and thus improve the handling of fluorescence spectroscopy for highly concentrated solutions.

  5. Using silicon-coated gold nanoparticles to enhance the fluorescence of CdTe quantum dot and improve the sensing ability of mercury (II)

    Science.gov (United States)

    Zhu, Jian; Chang, Hui; Li, Jian-Jun; Li, Xin; Zhao, Jun-Wu

    2018-01-01

    The effect of silicon-coated gold nanoparticles with different gold core diameter and silica shell thickness on the fluorescence emission of CdTe quantum dots (QDs) was investigated. For gold nanoparticles with a diameter of 15 nm, silica coating can only results in fluorescence recover of the bare gold nanoparticle-induced quenching of QDs. However, when the size of gold nanoparticle is increased to 60 nm, fluorescence enhancement of the QDs could be obtained by silica coating. Because of the isolation of the silica shell-reduced quenching effect and local electric field effect, the fluorescence of QDs gets intense firstly and then decreases. The maximum fluorescence enhancement takes place as the silica shell has a thickness of 30 nm. This enhanced fluorescence from silicon-coated gold nanoparticles is demonstrated for sensing of Hg2 +. Under optimal conditions, the enhanced fluorescence intensity decreases linearly with the concentration of Hg2 + ranging from 0 to 200 ng/mL. The limit of detection for Hg2 + is 1.25 ng/mL. Interference test and real samples detection indicate that the influence from other metal ions could be neglected, and the Hg2 + could be specifically detected.

  6. Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners.

    Science.gov (United States)

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

    2013-08-01

    VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event's time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μ m mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μ W from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e - RMS at room temperature.

  7. Photoactivation by visible light of CdTe quantum dots for inline generation of reactive oxygen species in an automated multipumping flow system.

    Science.gov (United States)

    Ribeiro, David S M; Frigerio, Christian; Santos, João L M; Prior, João A V

    2012-07-20

    Quantum dots (QD) are semiconductor nanocrystals able to generate free radical species upon exposure to an electromagnetic radiation, usually in the ultraviolet wavelength range. In this work, CdTe QD were used as highly reactive oxygen species (ROS) generators for the control of pharmaceutical formulations containing epinephrine. The developed approach was based on the chemiluminometric monitoring of the quenching effect of epinephrine on the oxidation of luminol by the produced ROS. Due to the relatively low energy band-gap of this chalcogenide a high power visible light emitting diode (LED) lamp was used as photoirradiation element and assembled in a laboratory-made photocatalytic unit. Owing to the very short lifetime of ROS and to ensure both reproducible generation and time-controlled reaction implementation and development, all reactional processes were implemented inline by using an automated multipumping micro-flow system. A linear working range for epinephrine concentration of up to 2.28×10(-6) mol L(-1) (r=0.9953; n=5) was verified. The determination rate was about 79 determinations per hour and the detection limit was about 8.69×10(-8) mol L(-1). The results obtained in the analysis of epinephrine pharmaceutical formulations by using the proposed methodology were in good agreement with those furnished by the reference procedure, with relative deviations lower than 4.80%. Copyright © 2012 Elsevier B.V. All rights reserved.

  8. Graded-Bandgap Solar Cells Using All-Electrodeposited ZnS, CdS and CdTe Thin-Films

    Directory of Open Access Journals (Sweden)

    Obi K. Echendu

    2015-05-01

    Full Text Available A 3-layer graded-bandgap solar cell with glass/FTO/ZnS/CdS/CdTe/Au structure has been fabricated using all-electrodeposited ZnS, CdS and CdTe thin layers. The three semiconductor layers were electrodeposited using a two-electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form glass/FTO/ZnS/CdS/CdTe/Au solar cell resulted in the formation of this 3-layer graded-bandgap device structure. This has yielded corresponding improvement in all the solar cell parameters resulting in a conversion efficiency >10% under AM1.5 illumination conditions at room temperature, compared to the 8.0% efficiency of a 2-layer glass/FTO/CdS/CdTe/Au reference solar cell structure. These results demonstrate the advantages of the multi-layer graded-bandgap device architecture over the conventional 2-layer structure. In addition, they demonstrate the effective application of the two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors with the elimination of the reference electrode as a possible impurity source.

  9. Technology Support for High-Throughput Processing of Thin-Film CdTe PV Modules Annual Technical Report, Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Rose, D.H.; Powell, R.C.; Karpov, V.; Grecu, D.; Jayamaha, U.; Dorer, G.L. (First Solar, L.L.C.)

    2001-02-05

    Results and conclusions from Phase II of a three-year subcontract are presented. The subcontract, entitled Technology Support for High-Throughput Processing of Thin-Film CdTe PV Modules, is First Solar's portion of the Thin-Film Photovoltaic Partnership Program. The research effort of this subcontract is divided into four areas of effort: (1) process and equipment development, (2) efficiency improvement, (3) characterization and analysis, and (4) environmental, health, and safety. As part of the process and equipment development effort, a new semiconductor deposition system with a throughput of 3 m2/min was completed, and a production line in a new 75,000 ft2 facility was started and is near completion. As part of the efficiency-improvement task, research was done on cells and modules with thin CdS and buffer layers as way to increase photocurrent with no loss in the other photovoltaic characteristics. A number of activities were part of the characterization and analysis task, including developing a new admittance spectroscopy system, with a range of 0.001 Hz to 100 kHz, to characterize cells. As part of the environmental, health, and safety task, the methanol-based CdCl2 process was replaced with aqueous-CdCl2. This change enabled the retention of a De Minimus level of emissions for the manufacturing plant, so no permitting is required.

  10. Development of a computer model for polycrystalline thin-film CuInSe sub 2 and CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gray, J.L.; Schwartz, R.J.; Lee, Y.J. (Purdue Univ., Lafayette, IN (United States))

    1992-09-01

    This report describes work to develop an accurate numerical model for CuInSe{sub 2} (CIS) and CdTe-based solar cells capable of running on a personal computer. Such a model will aid researchers in designing and analyzing CIS- and CdTe-based solar cells. ADEPT (A Device Emulation Pregrain and Tool) was used as the basis for this model. An additional objective of this research was to use the models developed to analyze the performance of existing and proposed CIS- and CdTe-based solar cells. The development of accurate numerical models for CIS- and CdTe-based solar cells required the compilation of cell performance data (for use in model verification) and the compilation of measurements of material parameters. The development of the numerical models involved implementing the various physical models appropriate to CIS and CdTe, as well as some common window. A version of the model capable of running on an IBM-comparable personal computer was developed (primary code development is on a SUN workstation). A user-friendly interface with pop-up menus is continuing to be developed for release with the IBM-compatible model.

  11. High-speed imaging at high x-ray energy: CdTe sensors coupled to charge-integrating pixel array detectors

    International Nuclear Information System (INIS)

    Becker, Julian; Tate, Mark W.; Shanks, Katherine S.; Philipp, Hugh T.; Weiss, Joel T.; Purohit, Prafull; Chamberlain, Darol; Gruner, Sol M.

    2016-01-01

    Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we describe the hybridization of CdTe sensors to two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame, in-pixel storage elements with framing periods <150 ns. The second detector, the MM-PAD, has an extended dynamic range by utilizing an in-pixel overflow counter coupled with charge removal circuitry activated at each overflow. This allows the recording of signals from the single-photon level to tens of millions of x-rays/pixel/frame while framing at 1 kHz. Both detector chips consist of a 128×128 pixel array with (150 µm) 2 pixels.

  12. High Resolution 125I Pinhole SPECT Imaging of the Mouse Thyroid With the MediSPECT Small Animal CdTe Scanner

    Science.gov (United States)

    Mettivier, Giovanni; Montesi, Maria Cristina; Curion, Assunta Simona; Lauria, Adele; Marotta, Marcello; Russo, Paolo

    2010-06-01

    The first in vivo tomographic 125I imaging of the mouse thyroid carried out with the new MediSPECT small animal SPECT scanner is presented. The scanner is based on a fine pitch CdTe semiconductor pixel detector (14 × 14 mm2, 256 × 256 square pixel with a 55 m side) and equipped with a set of high resolution collimators. The collimation and detection units of the scanner are mounted on a gantry, rotating around a horizontal axis, along which is placed the small animal housing. In an in vivo test, the mouse was injected with a Na125 I solution having a total activity of 31.8 MBq. The planar projections for SPECT reconstruction were acquired with a 300 m pinhole (magnification 1.47 and field of view of 9.6 × 9.6 mm2). The projections were captured in a step-and-shoot fashion and were processed with an Ordered Subsets-Expectation Maximization reconstruction algorithm in order to obtain the SPECT images. Several 125I imaging tests have been made by using phantoms to assess the detector spatial resolution. The measured spatial resolution with a 300 m pinhole is about 0.5 mm in planar imaging and better than 1 mm in tomographic imaging.

  13. Excitation-Dependent Carrier lifetime and Diffusion Length in Bulk