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Sample records for svojstva plenok cdte

  1. Utjecaj recikliranog punila na svojstva asfaltnih mješavina

    OpenAIRE

    Androjić, Ivica; Kaluđer, Gordana

    2017-01-01

    U radu se daje prikaz provedenih dosadašnjih istraživanja s primjenom različitih recikliranih materijala koji se koriste kao zamjena za kameno punilo u asfaltnim mješavinama. Rad obuhvaća prikaz provedenih istraživanja o utjecaju otpadnog stakla, otpada cementne industrije, betona, opeke, keramike, letećeg pepela i drugih na fizikalno mehanička svojstva bitumenskih mješavina. Kao konačan rezultat donose se zaključci o mogućoj primjeni pojedinih recikliranih materijala kao zamjeni za standardn...

  2. Biohemijska i funkcionalna svojstva piva sa dodatkom gljive Ganoderma lucidum

    OpenAIRE

    Despotović, Saša M.

    2017-01-01

    Pivo možda nije najstarije alkoholno piće, ali je definitivno među najpopularnijim napitcima današnjice. Svoju ogromnu popularnost sticalo je vekovima, služeći ne samo kao osvežavajući napitak već i kao fiziološki značajna namirnica. Poslednjih decenija, vršena su brojna istraživanja koja su se bavila zdravstvenim aspektima piva. Istraživanja potvrđuju da pivo u umerenim količinama ima blagotvorna svojstva poput: smanjenja rizika od kardiovaskularnih bolesti, snižavanja holesterola u krvi, re...

  3. Utjecaj ultrazvuka visokog intenziteta na reološka i pastozna svojstva škroba pšenice

    Directory of Open Access Journals (Sweden)

    Ivana Ljubić Herceg

    2010-01-01

    Full Text Available Svrha ovog rada je ispitati utjecaj ultrazvuka visokog i niskog intenziteta na reološka i pastozna svojstva suspenzija škroba pšenice. Ispitivane suspenzije sadrže 10 % pšeničnog škroba te su neposredno nakon pripreme procesirane ultrazvukom. Sva ispitivanja provedena su prije i nakon ultrazvučne obrade u ultrazvučnoj kupelji frekvencije 22 kHz, nominalne snage 150 W te ultrazvučnom sondom frekvencije 24 kHz, nominalne snage 100, 300 i 400 W. Vrijeme ultrazvučne obrade svih uzoraka bilo je 15 i 30 minuta. Reološka svojstva određena su primjenom rotacionog reometra Rheometric Scientific RM-180 pri temperaturi od 20 ˚C, a pastozna svojstva škrobnih suspenzija određena su primjenom Micro Visco-Amylo-Graph, Brabender Ohg Duisburg, Njemačka po metodi ICC Standard 126/1. Ultrazvučna obrada uzrokuje mehaničko oštećenje škrobne granule čime njena unutrašnjost postaje dostupnija vodi tijekom zagrijavanja što ima za posljedicu značajne promjene reoloških i pastoznih svojstava škrobnih suspenzija. Reološki parametri pokazuju da sve suspenzije imaju ne-Newtonski karakter, a ultrazvučni tretmen uzrokovao je značajno povećanje koeficijenta konzistencije svih ispitivanih sustava. Ultrazvučnim procesiranjem došlo je do značajnog sniženja temperature želatinizacije kod svih škrobnih suspenzija. Značajno smanjenje početnih temperatura želatinizacije upućuje na raniji stupanj bubrenja granule tijekom zagrijavanja.

  4. Surface passivation for CdTe devices

    Energy Technology Data Exchange (ETDEWEB)

    Reese, Matthew O.; Perkins, Craig L.; Burst, James M.; Gessert, Timothy A.; Barnes, Teresa M.; Metzger, Wyatt K.

    2017-08-01

    In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

  5. Self-Catalyzed CdTe Wires

    Directory of Open Access Journals (Sweden)

    Tom Baines

    2018-04-01

    Full Text Available CdTe wires have been fabricated via a catalyst free method using the industrially scalable physical vapor deposition technique close space sublimation. Wire growth was shown to be highly dependent on surface roughness and deposition pressure, with only low roughness surfaces being capable of producing wires. Growth of wires is highly (111 oriented and is inferred to occur via a vapor-solid-solid growth mechanism, wherein a CdTe seed particle acts to template the growth. Such seed particles are visible as wire caps and have been characterized via energy dispersive X-ray analysis to establish they are single phase CdTe, hence validating the self-catalysation route. Cathodoluminescence analysis demonstrates that CdTe wires exhibited a much lower level of recombination when compared to a planar CdTe film, which is highly beneficial for semiconductor applications.

  6. Antioksidacijska svojstva i stabilnost boje crvenog piva, ružičastog vina i ružičastog pjenušca

    OpenAIRE

    Šipalo, Toni

    2016-01-01

    Biološki aktivne supstancije u pivu i vinu, posebice fenoli, zbog antioksidacijske aktivnosti smanjuju rizik za oboljenje od sve učestalijih kroničnih bolesti. Udjel fenolnih spojeva jedan je od najvažnijih parametara sastava, kako piva, tako i vina, budući da doprinose njihovim organoleptičkim svojstvima, kao što su boja, trpkost i gorčina. U ovom su radu uspoređena antioksidacijska svojstva Istarskog crvenog piva, ružičastog vina i ružičastog pjenušca primjenom različitih testova: određivan...

  7. Review of CdTe medical applications

    Energy Technology Data Exchange (ETDEWEB)

    Entine, G; Garcia, D A; Tow, D E

    1977-02-01

    CdTe sensors are now being used in several areas of nuclear medicine. CdTe probe technics, originally developed to study dental pathology in dog models, are being used clinically to diagnose venous thrombosis of the legs and to detect occult dental infections in patients scheduled for prosthetic cardiovascular and orthopedic surgery. Similar instrumentation is in use in animal research of myocardial infarction and synthetic tooth substitutes. Transmission technics have also been developed to diagnose pulmonary edema and to measure bone mineral changes in space flight. Investigations are also underway in the use of linear or two-dimensional arrays of CdTe gamma sensors for medical imaging. Economic considerations have slowed this work, but the technology appears to be available. Development of photoconductive CdTe X-ray detectors for scintigraphic scanners has also begun. Rapid detector improvement will be needed for success in this field, but the potential usefulness is very great. Together, the present application results are encouraging and wide use of CdTe detectors should occur within only a few years.

  8. Svojstva i struktura wolframkarbid-kobalt prevlake deponovane plazma-sprej postupkom

    Directory of Open Access Journals (Sweden)

    Mihailo Rade Mrdak

    2013-10-01

    radu predstavljeni su rezultati eksperimentalnih istraživanja uticaja protoka plazma gasa (He na mehanička svojstva i mikrostrukturu slojeva WC17Co. Glavni cilj je bio da se stara tehnologija cementacije  rukavaca vratila zameni deponovanjem WC17Co prevlake plazma-sprej tehnologijom. Analizirane su mehaničke karakteristike i mikrostrukture prevlaka da bi se odabrala prevlaka najboljih karakteristika. Prevlaka sa najboljim mehaničkim i strukturnim karakteristikama je testirana i homologovana na rukavcu vratila glavnog rotora helikoptera "gazela H42" letnim ispitivanjem u trajanju od 50 časova u VZ „Moma Stanojlović" u Batajnici. Materijali za ispitivanje i uzorci Za izradu prevlaka upotrebljen je prah firme „Sulzer Metco” sa oznakom Metco 73F-NS-1. Za izradu praha korišćena je tehnika suvo  raspršavanje/sinterovanje sa sadržajem od 83 tež.%WC i 17 tež.%Co. Prah koji se koristio u eksperimentu imao je raspon granulacije od 11 µm do 53 µm (Material Product Data Sheet, 2011. Čestice praha su porozne  i sfernog oblika. Osnove na koje su deponovane prevlake za procenu strukture i za ispitivanje mikrotvrdoće izrađene su od čelika Č.4171 (X15Cr13 EN10027 u termički neobrađenom stanju dimenzija 70x20x1,5mm . Osnove za ispitivanje čvrstoće spoja takođe su izrađene od čelika Č.4171(X15Cr13EN10027 u termički neobrađenom stanju dimenzija Ø25x50 mm (Turbojet engine-standard practices manuel TURBOMECA. Mehaničke karakterizacije prevlaka WC17Co urađene su prema standardu TURBOMECA (Turbojet engine-standard practices manuel TURBOMECA. Za merenje mikrotvrdoće i metalografska ispitivanja korišćeni su uzorci dimanzija 70 × 20 x 1,5 mm, dok su za ispitivanje zatezne čvrstoće korišćeni uzorci  Ø25 x 50 mm. Merenja mikrotvrdoća izvršena su korišćenjem Vikers dijamant piramide indenter i 300 grama opterećenje (HV0.3. Merenje je urađeno u pravcu duž lamela, u sredini i na krajevima uzorka. Na tri mesta sprovedeno je pet očitavanja, a

  9. Characterization and photoluminescence studies of CdTe ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. The major objective of this work was to detect the change of photoluminescence (PL) intensity of. CdTe nanoparticles (NPs) before and after transfer from liquid phase to polystyrene (PS) matrix by electro- spinning technique. Thio-stabilized CdTe NPs were first synthesized in aqueous, then enwrapped by cetyl-.

  10. Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

    2015-01-15

    The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

  11. CdTe ambulatory ventricular function monitor

    International Nuclear Information System (INIS)

    Lazewatsky, J.L.; Alpert, N.M.; Moore, R.H.; Boucher, C.A.; Strauss, H.W.

    1979-01-01

    A prototype device consisting of two arrays of CdTe detectors, ECG amplifiers and gate, microprocessor, and tape recorder was devised to record simultaneous ECG and radionuclide blood pool data from the left ventricle for extended periods during normal activity. The device is intended to record information concerning both normal and abnormal physiology of the heart and to permit the evaluation of new pharmaceuticals under everyday conditions. Preliminary results indicate that the device is capable of recording and reading out data from both phantoms and patients

  12. Spin dynamics in bulk CdTe at room temperature

    International Nuclear Information System (INIS)

    Nahalkova, P.; Nemec, P.; Sprinzl, D.; Belas, E.; Horodysky, P.; Franc, J.; Hlidek, P.; Maly, P.

    2006-01-01

    In this paper, we report on the room temperature dynamics of spin-polarized carriers in undoped bulk CdTe. Platelets of CdTe with different concentration of preparation-induced dislocations were prepared by combining the mechanical polishing and chemical etching. Using the polarization-resolved pump-probe experiment in transmission geometry, we have observed a systematic decrease of both the signal polarization and the electron spin dephasing time (from 52 to 36 ps) with the increased concentration of defects. We have suggested that the Elliot-Yafet mechanism might be the dominant spin dephasing mechanism in platelets of CdTe at room temperature

  13. Growth of CdTe: Al films; Crecimiento de peliculas de CdTe: Al

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez A, M.; Zapata T, M. [CICATA-IPN, 89600 Altamira, Tamaulipas (Mexico); Melendez L, M. [CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico); Pena, J.L. [CINVESTAV-IPN, A.P. 73 Cordemex, 97310 Merida, Yucatan (Mexico)

    2006-07-01

    CdTe: AI films were grown by the close space vapor transport technique combined with free evaporation (CSVT-FE). The Aluminum (Al) evaporation was made by two kinds of sources: one made of graphite and the other of tantalum. The films were deposited on glass substrates. The Al source temperature was varied maintaining the CdTe source temperature fixed as well as the substrate temperature. The films were characterized by x-ray energy dispersive analysis (EDAX), x-ray diffraction and optical transmission. The results showed for the films grown with the graphite source for Al evaporation, the Al did not incorporate in the CdTe matrix, at least to the level of EDAX sensitivity; they maintained the same crystal structure and band gap. For the samples grown with the tantalum source, we were able to incorporate the Al. The x-ray diffraction patterns show that the films have a crystal structure that depends on Al concentration. They were cubic up to 2.16 at. % Al concentration; for 19.65 at. % we found a mixed phase; for Al concentration higher than 21 at. % the films were amorphous. For samples with cubic structure it was found that the lattice parameter decreases and the band gap increases with Al concentration. (Author)

  14. Interaction of porphyrins with CdTe quantum dots

    International Nuclear Information System (INIS)

    Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei

    2011-01-01

    Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

  15. The effect of excitons on CdTe solar cells

    International Nuclear Information System (INIS)

    Karazhanov, S. Zh.; Zhang, Y.; Mascarenhas, A.; Deb, S.

    2000-01-01

    Temperature and doping-level dependence of CdTe solar cells is investigated, taking into account the involvement of excitons on photocurrent transport. We show that the density of excitons in CdTe is comparable with that of minority carriers at doping levels ≥10 15 cm -3 . From the investigation of the dark-saturation current, we show that the product of electron and hole concentrations at equilibrium is several orders of magnitude more than the square of the intrinsic carrier concentration. With this assumption, we have studied the effect of excitons on CdTe solar cells, and the effect is negative. CdTe solar cell performance with excitons included agrees well with existing experimental results. (c) 2000 American Institute of Physics

  16. CdTe Photovoltaics for Sustainable Electricity Generation

    Science.gov (United States)

    Munshi, Amit; Sampath, Walajabad

    2016-09-01

    Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1- x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

  17. High-quality CdTe films from nanoparticle precursors

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, D.L.; Pehnt, M.; Urgiles, E. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    In this paper the authors demonstrate that nanoparticulate precursors coupled with spray deposition offers an attractive route into electronic materials with improved smoothness, density, and lower processing temperatures. Employing a metathesis approach, cadmium iodide was reacted with sodium telluride in methanol solvent, resulting in the formation of soluble NaI and insoluble CdTe nanoparticles. After appropriate chemical workup, methanol-capped CdTe colloids were isolated. CdTe thin film formation was achieved by spray depositing the nanoparticle colloids (25-75 {Angstrom} diameter) onto substrates at elevated temperatures (T = 280-440{degrees}C) with no further thermal treatment. These films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Cubic CdTe phase formation was observed by XRD, with a contaminant oxide phase also detected. XPS analysis showed that CdTe films produced by this one-step method contained no Na or C and substantial O. AFM gave CdTe grain sizes of {approx}0.1-0.3 {mu}m for film sprayed at 400{degrees}C. A layer-by-layer film growth mechanism proposed for the one-step spray deposition of nanoparticle precursors will be discussed.

  18. CdTe aggregates in KBr crystalline matrix

    International Nuclear Information System (INIS)

    Bensouici, A.; Plaza, J.L.; Dieguez, E.; Halimi, O.; Boudine, B.; Addala, S.; Guerbous, L.; Sebais, M.

    2009-01-01

    In this work, we report the experimental results on the fabrication and optical characterization of Czochralski (Cz) grown KBr single crystals doped with CdTe crystallites. The results of the optical absorption have shown two bands, the first one located at 250 nm demonstrates the incorporation of cadmium atoms in the KBr host followed by a partial chemical decomposition of CdTe, the second band located at 585 nm shows an optical response of CdTe aggregates. Photoluminescence spectra at room temperature before annealing showed a band located at 520 nm (2.38 eV), with a blue shift from the bulk gap of 0.82 eV (E g (CdTe)=1.56 eV). While the photoluminescence spectra after annealing at 600 deg. C showed a band situated at 640 nm (1.93 eV), these bands are due to band-to-band transitions of CdTe nanocrystals with a blue shift from the bulk gap at 0.38 eV. Blue shift in optical absorption and photoluminescence spectra confirm nanometric size of dopant. X-ray diffraction (XRD) spectra have shown the incorporation of CdTe aggregates in KBr.

  19. CdTe aggregates in KBr crystalline matrix

    Energy Technology Data Exchange (ETDEWEB)

    Bensouici, A., E-mail: bensouicia@yahoo.f [Laboratory of Crystallography, Department of Physics, Mentouri-Constantine University, Constantine 25000 (Algeria); Plaza, J.L., E-mail: joseluis.plaza@uam.e [Crystal Growth Laboratory (CGL), Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid (Spain); Dieguez, E. [Crystal Growth Laboratory (CGL), Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid (Spain); Halimi, O.; Boudine, B.; Addala, S. [Laboratory of Crystallography, Department of Physics, Mentouri-Constantine University, Constantine 25000 (Algeria); Guerbous, L. [Centre de recherche nucleaire d' Alger (CRNA), Alger 16000 (Algeria); Sebais, M. [Laboratory of Crystallography, Department of Physics, Mentouri-Constantine University, Constantine 25000 (Algeria)

    2009-09-15

    In this work, we report the experimental results on the fabrication and optical characterization of Czochralski (Cz) grown KBr single crystals doped with CdTe crystallites. The results of the optical absorption have shown two bands, the first one located at 250 nm demonstrates the incorporation of cadmium atoms in the KBr host followed by a partial chemical decomposition of CdTe, the second band located at 585 nm shows an optical response of CdTe aggregates. Photoluminescence spectra at room temperature before annealing showed a band located at 520 nm (2.38 eV), with a blue shift from the bulk gap of 0.82 eV (E{sub g} (CdTe)=1.56 eV). While the photoluminescence spectra after annealing at 600 deg. C showed a band situated at 640 nm (1.93 eV), these bands are due to band-to-band transitions of CdTe nanocrystals with a blue shift from the bulk gap at 0.38 eV. Blue shift in optical absorption and photoluminescence spectra confirm nanometric size of dopant. X-ray diffraction (XRD) spectra have shown the incorporation of CdTe aggregates in KBr.

  20. Study on response function of CdTe detector

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyunduk; Cho, Gyuseong [Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of); Kang, Bo-Sun [Department of Radiological Science, Catholic University of Daegu, Kyoungsan, Kyoungbuk 712-702 (Korea, Republic of)], E-mail: bskang@cu.ac.kr

    2009-10-21

    So far the origin of the mechanism of light emission in the sonoluminescence has not elucidated whether it is due to blackbody radiation or bremsstrahlung. The final goal of our study is measuring X-ray energy spectrum using high-sensitivity cadmium telluride (CdTe) detector in order to obtain information for understanding sonoluminescence phenomena. However, the scope of this report is the measurement of X-ray spectrum using a high-resolution CdTe detector and determination of CdTe detector response function to obtain the corrected spectrum from measured soft X-ray source spectrum. In general, the measured spectrum was distorted by the characteristics of CdTe detector. Monte Carlo simulation code, MCNP, was used to obtain the reference response function of the CdTe detector. The X-ray spectra of {sup 57}Co, {sup 133}Ba, and {sup 241}Am were obtained by a 4x4x1.0(t) mm{sup 3} CdTe detector at room temperature.

  1. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    Directory of Open Access Journals (Sweden)

    Wagner Anacleto Pinheiro

    2006-03-01

    Full Text Available Unlike other thin film deposition techniques, close spaced sublimation (CSS requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate and a sintered CdTe powder. In this work, CdTe thin films were deposited by CSS technique from different CdTe sources: particles, powder, compact powder, a paste made of CdTe and propylene glycol and source-plates (CdTe/Mo and CdTe/glass. The largest deposition rate was achieved when a paste made of CdTe and propylene glycol was used as the source. CdTe source-plates led to lower rates, probably due to the poor heat transmission, caused by the introduction of the plate substrate. The results also showed that compacting the powder the deposition rate increases due to the better thermal contact between powder particles.

  2. A facile route to shape controlled CdTe nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Mntungwa, Nhlakanipho; Rajasekhar, Pullabhotla V.S.R. [Department of Chemistry, University of Zululand, Private Bag X1001, KwaDlangezwa 3886, Empangeni, KZN (South Africa); Revaprasadu, Neerish, E-mail: nrevapra@pan.uzulu.ac.za [Department of Chemistry, University of Zululand, Private Bag X1001, KwaDlangezwa 3886, Empangeni, KZN (South Africa)

    2011-04-15

    Research highlights: {yields} A facile hybrid solution based/thermolysis route has been used for the synthesis of hexadecylamine capped CdTe nanoparticles. {yields} This method involves the reaction by the addition of an aqueous suspension of a cadmium salt to a freshly prepared NaHTe solution. {yields} The cadmium salt plays an important role in the growth mechanism of the particles and hence its final morphology. - Abstract: Hexadecylamine (HDA) capped CdTe nanoparticles have been synthesized using a facile hybrid solution based/thermolysis route. This method involves the reaction by the addition of an aqueous suspension or solution of a cadmium salt (chloride, acetate, nitrate or carbonate) to a freshly prepared NaHTe solution. The isolated CdTe was then dispersed in tri-octylphosphine (TOP) and injected into pre-heated HDA at temperatures of 190, 230 and 270 deg. C for 2 h. The particle growth and size distribution of the CdTe particles synthesized using cadmium chloride as the cadmium source were monitored using absorption and photoluminescence spectroscopy. The final morphology of the CdTe nanoparticles synthesized from the various cadmium sources was studied by transmission electron microscopy (TEM) and high resolution TEM. The cadmium source has an influence on the final morphology of the particles.

  3. A facile route to shape controlled CdTe nanoparticles

    International Nuclear Information System (INIS)

    Mntungwa, Nhlakanipho; Rajasekhar, Pullabhotla V.S.R.; Revaprasadu, Neerish

    2011-01-01

    Research highlights: → A facile hybrid solution based/thermolysis route has been used for the synthesis of hexadecylamine capped CdTe nanoparticles. → This method involves the reaction by the addition of an aqueous suspension of a cadmium salt to a freshly prepared NaHTe solution. → The cadmium salt plays an important role in the growth mechanism of the particles and hence its final morphology. - Abstract: Hexadecylamine (HDA) capped CdTe nanoparticles have been synthesized using a facile hybrid solution based/thermolysis route. This method involves the reaction by the addition of an aqueous suspension or solution of a cadmium salt (chloride, acetate, nitrate or carbonate) to a freshly prepared NaHTe solution. The isolated CdTe was then dispersed in tri-octylphosphine (TOP) and injected into pre-heated HDA at temperatures of 190, 230 and 270 deg. C for 2 h. The particle growth and size distribution of the CdTe particles synthesized using cadmium chloride as the cadmium source were monitored using absorption and photoluminescence spectroscopy. The final morphology of the CdTe nanoparticles synthesized from the various cadmium sources was studied by transmission electron microscopy (TEM) and high resolution TEM. The cadmium source has an influence on the final morphology of the particles.

  4. Photostimulated changes of properties of CdTe films

    Energy Technology Data Exchange (ETDEWEB)

    Dzhafarov, T.D. [Institute of Physics, Azerbaijan National Academy of Sciences, AZ-1143 Baku (Azerbaijan); Yesilkaya, S.S. [Department of Physics, Yildiz Technical University, 34210 Esenler/Istanbul (Turkey)

    2007-08-15

    The effect of illumination during the close-spaced sublimation (CSS) growth on composition, structural, electrical, optical and photovoltaic properties of CdTe films and CdTe/CdS solar cells were investigated. Data on comparative study by using X-ray diffraction (XRD), scanning electron microscopy (SEM), absorption spectra and conductivity-temperature measurements of CdTe films prepared by CSS method in dark (CSSD) and under illumination (CSSI) were presented. It is shown that the growth rate and the grain size of CdTe films grown under illumination is higher (by factor about of 1.5 and 3 respectively) than those for films prepared without illumination. The energy band gap of CdTe films fabricated by both technology, determined from absorption spectra, is same (about of 1.50 eV), however conductivity of the CdTe films produced by CSSI is considerably greater (by factor of 10{sup 7}) than that of films prepared by CSSD. The photovoltaic parameters of pCdTe/nCdS solar cells fabricated by photostimulated CSSI technology (J{sub sc}=28 mA/cm{sup 2}, V{sub oc}=0.63 V) are considerably larger than those for cells prepared by CSSD method (J{sub sc}=22 mA/cm{sup 2}, V{sub oc}=0.52 V). A mechanism of photostimulated changes of properties of CdTe films and improvement of photovoltaic parameters of CdTe/CdS solar cells is suggested. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Applications of CdTe to nuclear medicine. Final report

    International Nuclear Information System (INIS)

    Entine, G.

    1985-01-01

    Uses of cadmium telluride (CdTe) nuclear detectors in medicine are briefly described. They include surgical probes and a system for measuring cerebral blood flow in the intensive care unit. Other uses include nuclear dentistry, x-ray exposure control, cardiology, diabetes, and the testing of new pharmaceuticals

  6. Radiative and interfacial recombination in CdTe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Swartz, C. H., E-mail: craig.swartz@txstate.edu; Edirisooriya, M.; LeBlanc, E. G.; Noriega, O. C.; Jayathilaka, P. A. R. D.; Ogedengbe, O. S.; Hancock, B. L.; Holtz, M.; Myers, T. H. [Materials Science, Engineering, and Commercialization Program, Texas State University, 601 University Dr., San Marcos, Texas 78666 (United States); Zaunbrecher, K. N. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Mississippi RSF200, Golden, Colorado 80401 (United States)

    2014-12-01

    Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 10{sup 10 }cm{sup −2} and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10{sup −10} cm{sup 3}s{sup −1}. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.

  7. Thermal stability of substitutional ag in CdTe

    NARCIS (Netherlands)

    Jahn, SG; Hofsass, H; Restle, M; Ronning, C; Quintel, H; BharuthRam, K; Wahl, U

    The thermal stability of substitutional Ag in CdTe was deduced from lattice location measurements at different temperatures. Substitutional Ag probe atoms were generated via transmutation doping from radioactive Cd isotopes. The lattice sites of Ag isotopes were determined by measuring the

  8. SYNTHESIS AND CHARACTERIZATION OF CdTe QUANTUM ...

    African Journals Online (AJOL)

    Preferred Customer

    variables, including pH values, Cd/Te and Cd/Cys molar ratios, on the ... QDs requires nitrogen as the protective gas at the initial stage. ... three-fold volume isopropyl alcohol, and the sediment was collected after centrifugation at 4000.

  9. Band structure of CdTe under high pressure

    International Nuclear Information System (INIS)

    Jayam, Sr. Gerardin; Nirmala Louis, C.; Amalraj, A.

    2005-01-01

    The band structures and density of states of cadmium telluride (CdTe) under various pressures ranging from normal to 4.5 Mbar are obtained. The electronic band structure at normal pressure of CdTe (ZnS structure) is analyzed and the direct band gap value is found to be 1.654 eV. CdTe becomes metal and superconductor under high pressure but before that it undergoes structural phase transition from ZnS phase to NaCl phase. The equilibrium lattice constant, bulk modulus and the phase transition pressure at which the compounds undergo structural phase transition from ZnS to NaCl are predicted from the total energy calculations. The density of states at the Fermi level (N(E F )) gets enhanced after metallization, which leads to the superconductivity in CdTe. In our calculation, the metallization pressure (P M = 1.935 Mbar) and the corresponding reduced volume ((V/V 0 ) M = 0.458) are estimated. Metallization occurs via direct closing of band gap at Γ point. (author)

  10. Fractal features of CdTe thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hosseinpanahi, Fayegh, E-mail: f.hosseinpanahi@yahoo.com [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Raoufi, Davood [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of); Ranjbarghanei, Khadijeh [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Karimi, Bayan [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Babaei, Reza [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Hasani, Ebrahim [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of)

    2015-12-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  11. Fractal features of CdTe thin films grown by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

    2015-01-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  12. CdTe polycrystalline films on Ni foil substrates by screen printing and their photoelectric performance

    International Nuclear Information System (INIS)

    Yao, Huizhen; Ma, Jinwen; Mu, Yannan; Su, Shi; Lv, Pin; Zhang, Xiaoling; Zhou, Liying; Li, Xue; Liu, Li; Fu, Wuyou; Yang, Haibin

    2015-01-01

    Highlights: • The sintered CdTe polycrystalline films by a simple screen printing. • The flexible Ni foil was chose as substrates to reduce the weight of the electrode. • The compact CdTe film was obtained at 550 °C sintering temperature. • The photoelectric activity of the CdTe polycrystalline films was excellent. - Abstract: CdTe polycrystalline films were prepared on flexible Ni foil substrates by sequential screen printing and sintering in a nitrogen atmosphere for the first time. The effect of temperature on the quality of the screen-printed film was investigated in our work. The high-quality CdTe films were obtained after sintering at 550 °C for 2 h. The properties of the sintered CdTe films were characterized by scanning electron microscopy, X-ray diffraction pattern and UV–visible spectroscopy. The high-quality CdTe films have the photocurrent was 2.04 mA/cm 2 , which is higher than that of samples prepared at other temperatures. Furthermore, CdCl 2 treatment reduced the band gap of the CdTe film due to the larger grain size. The photocurrent of photoelectrode based on high crystalline CdTe polycrystalline films after CdCl 2 treatment improved to 2.97 mA/cm 2 , indicating a potential application in photovoltaic devices

  13. Current simulation of symmetric contacts on CdTe

    International Nuclear Information System (INIS)

    Ruzin, A.

    2011-01-01

    This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

  14. Current simulation of symmetric contacts on CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Ruzin, A., E-mail: aruzin@post.tau.ac.il [School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, 69978 Tel Aviv (Israel)

    2011-12-01

    This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

  15. A 90 element CdTe array detector

    Energy Technology Data Exchange (ETDEWEB)

    Iwase, Y.; Onozuka, A.; Ohmori, M. (Nippon Mining Co. Ltd., Toda, Saitama (Japan). Electronic Material and Components Labs.); Funaki, M. (Nippon Mining Co. Ltd., Toda, Saitama (Japan). Materials Development Research Labs.)

    1992-11-15

    The fabrication of a CdTe array radiation detector and its radiation detection characteristics are described. In order to obtain high efficiency of charge collection and realize uniform detection sensitivity, current-voltage characteristics with the combination of large and small barrier height contacts and three kinds of CdTe crystals have been investigated. It was found that the Schottky barrier height of electroless Pt deposition was 0.97 eV, which effectively suppressed electron injection. By using the crystal grown by the travelling heater method with a Cl concentration of 2 ppm, carrier lifetimes for electrons and holes of 1.0 and 0.5 [mu]s, respectively, were achieved. A 90 element array detector exhibited an energy resolution as low as 4.5 keV and a count rate variation of less than 5% for 60 keV [gamma]-rays. (orig.).

  16. A 90 element CdTe array detector

    Science.gov (United States)

    Iwase, Y.; Funaki, M.; Onozuka, A.; Ohmori, M.

    1992-11-01

    The fabrication of a CdTe array radiation detector and its radiation detection characteristics are described. In order to obtain high efficiency of charge collection and realize uniform detection sensitivity, current-voltage characteristics with the combination of large and small barrier height contacts and three kinds of CdTe crystals have been investigated. It was found that the Schottky barrier height of electroless Pt deposition was 0.97 eV, which effectively suppressed electron injection. By using the crystal grown by the travelling heater method with a Cl concentration of 2 ppm, carrier lifetimes for electrons and holes of 1.0 and 0.5 μs, respectively, were achieved. A 90 element array detector exhibited an energy resolution as low as 4.5 keV and a count rate variation of less than 5% for 60 keV γ-rays.

  17. Metastability and reliability of CdTe solar cells

    Science.gov (United States)

    Guo, Da; Brinkman, Daniel; Shaik, Abdul R.; Ringhofer, Christian; Vasileska, Dragica

    2018-04-01

    Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers devote significant empirical efforts to study these phenomena and to improve semiconductor device stability. Still, understanding the underlying reasons of these instabilities remains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most commonly alleged causes of metastability in CdTe devices, such as ‘migration of Cu’, have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses suggesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe provide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic defects; for example, changing the state of an impurity from an interstitial donor to a substitutional acceptor often is accompanied by generation of a compensating intrinsic interstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the electrical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of temporal

  18. Advanced processing of CdTe pixel radiation detectors

    Science.gov (United States)

    Gädda, A.; Winkler, A.; Ott, J.; Härkönen, J.; Karadzhinova-Ferrer, A.; Koponen, P.; Luukka, P.; Tikkanen, J.; Vähänen, S.

    2017-12-01

    We report a fabrication process of pixel detectors made of bulk cadmium telluride (CdTe) crystals. Prior to processing, the quality and defect density in CdTe material was characterized by infrared (IR) spectroscopy. The semiconductor detector and Flip-Chip (FC) interconnection processing was carried out in the clean room premises of Micronova Nanofabrication Centre in Espoo, Finland. The chip scale processes consist of the aluminum oxide (Al2O3) low temperature thermal Atomic Layer Deposition (ALD), titanium tungsten (TiW) metal sputtering depositions and an electroless Nickel growth. CdTe crystals with the size of 10×10×0.5 mm3 were patterned with several photo-lithography techniques. In this study, gold (Au) was chosen as the material for the wettable Under Bump Metalization (UBM) pads. Indium (In) based solder bumps were grown on PSI46dig read out chips (ROC) having 4160 pixels within an area of 1 cm2. CdTe sensor and ROC were hybridized using a low temperature flip-chip (FC) interconnection technique. The In-Au cold weld bonding connections were successfully connecting both elements. After the processing the detector packages were wire bonded into associated read out electronics. The pixel detectors were tested at the premises of Finnish Radiation Safety Authority (STUK). During the measurement campaign, the modules were tested by exposure to a 137Cs source of 1.5 TBq for 8 minutes. We detected at the room temperature a photopeak at 662 keV with about 2 % energy resolution.

  19. CDTE alloys and their application for increasing solar cell performance

    Science.gov (United States)

    Swanson, Drew E.

    Cadmium Telluride (CdTe) thin film solar is the largest manufactured solar cell technology in the United States and is responsible for one of the lowest costs of utility scale solar electricity at a purchase agreement of $0.0387/kWh. However, this cost could be further reduced by increasing the cell efficiency. To bridge the gap between the high efficiency technology and low cost manufacturing, a research and development tool and process was built and tested. This fully automated single vacuum PV manufacturing tool utilizes multiple inline close space sublimation (CSS) sources with automated substrate control. This maintains the proven scalability of the CSS technology and CSS source design but with the added versatility of independent substrate motion. This combination of a scalable deposition technology with increased cell fabrication flexibility has allowed for high efficiency cells to be manufactured and studied. The record efficiency of CdTe solar cells is lower than fundamental limitations due to a significant deficit in voltage. It has been modeled that there are two potential methods of decreasing this voltage deficiency. The first method is the incorporation of a high band gap film at the back contact to induce a conduction-band barrier that can reduce recombination by reflecting electrons from the back surface. The addition of a Cd1-x MgxTe (CMT) layer at the back of a CdTe solar cell should induce this desired offset and reflect both photoelectrons and forward-current electrons away from the rear surface. Higher collection of photoelectrons will increase the cells current and the reduction of forward current will increase the cells voltage. To have the optimal effect, CdTe must have reasonable carrier lifetimes and be fully depleted. To achieve this experimentally, CdTe layers have been grown sufficiently thin to help produce a fully depleted cell. A variety of measurements including performance curves, transmission electron microscopy, x

  20. Translocation and neurotoxicity of CdTe quantum dots in RMEs motor neurons in nematode Caenorhabditis elegans

    International Nuclear Information System (INIS)

    Zhao, Yunli; Wang, Xiong; Wu, Qiuli; Li, Yiping; Wang, Dayong

    2015-01-01

    Graphical abstract: - Highlights: • We investigated in vivo neurotoxicity of CdTe QDs on RMEs motor neurons in C. elegans. • CdTe QDs in the range of μg/L caused neurotoxicity on RMEs motor neurons. • Bioavailability of CdTe QDs may be the primary inducer for CdTe QDs neurotoxicity. • Both oxidative stress and cell identity regulate the CdTe QDs neurotoxicity. • CdTe QDs were translocated and deposited into RMEs motor neurons. - Abstract: We employed Caenorhabditis elegans assay system to investigate in vivo neurotoxicity of CdTe quantum dots (QDs) on RMEs motor neurons, which are involved in controlling foraging behavior, and the underlying mechanism of such neurotoxicity. After prolonged exposure to 0.1–1 μg/L of CdTe QDs, abnormal foraging behavior and deficits in development of RMEs motor neurons were observed. The observed neurotoxicity from CdTe QDs on RMEs motor neurons might be not due to released Cd 2+ . Overexpression of genes encoding Mn-SODs or unc-30 gene controlling cell identity of RMEs neurons prevented neurotoxic effects of CdTe QDs on RMEs motor neurons, suggesting the crucial roles of oxidative stress and cell identity in regulating CdTe QDs neurotoxicity. In nematodes, CdTe QDs could be translocated through intestinal barrier and be deposited in RMEs motor neurons. In contrast, CdTe@ZnS QDs could not be translocated into RMEs motor neurons and therefore, could only moderately accumulated in intestinal cells, suggesting that ZnS coating might reduce neurotoxicity of CdTe QDs on RMEs motor neurons. Therefore, the combinational effects of oxidative stress, cell identity, and bioavailability may contribute greatly to the mechanism of CdTe QDs neurotoxicity on RMEs motor neurons. Our results provide insights into understanding the potential risks of CdTe QDs on the development and function of nervous systems in animals

  1. Translocation and neurotoxicity of CdTe quantum dots in RMEs motor neurons in nematode Caenorhabditis elegans

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yunli; Wang, Xiong; Wu, Qiuli; Li, Yiping; Wang, Dayong, E-mail: dayongw@seu.edu.cn

    2015-02-11

    Graphical abstract: - Highlights: • We investigated in vivo neurotoxicity of CdTe QDs on RMEs motor neurons in C. elegans. • CdTe QDs in the range of μg/L caused neurotoxicity on RMEs motor neurons. • Bioavailability of CdTe QDs may be the primary inducer for CdTe QDs neurotoxicity. • Both oxidative stress and cell identity regulate the CdTe QDs neurotoxicity. • CdTe QDs were translocated and deposited into RMEs motor neurons. - Abstract: We employed Caenorhabditis elegans assay system to investigate in vivo neurotoxicity of CdTe quantum dots (QDs) on RMEs motor neurons, which are involved in controlling foraging behavior, and the underlying mechanism of such neurotoxicity. After prolonged exposure to 0.1–1 μg/L of CdTe QDs, abnormal foraging behavior and deficits in development of RMEs motor neurons were observed. The observed neurotoxicity from CdTe QDs on RMEs motor neurons might be not due to released Cd{sup 2+}. Overexpression of genes encoding Mn-SODs or unc-30 gene controlling cell identity of RMEs neurons prevented neurotoxic effects of CdTe QDs on RMEs motor neurons, suggesting the crucial roles of oxidative stress and cell identity in regulating CdTe QDs neurotoxicity. In nematodes, CdTe QDs could be translocated through intestinal barrier and be deposited in RMEs motor neurons. In contrast, CdTe@ZnS QDs could not be translocated into RMEs motor neurons and therefore, could only moderately accumulated in intestinal cells, suggesting that ZnS coating might reduce neurotoxicity of CdTe QDs on RMEs motor neurons. Therefore, the combinational effects of oxidative stress, cell identity, and bioavailability may contribute greatly to the mechanism of CdTe QDs neurotoxicity on RMEs motor neurons. Our results provide insights into understanding the potential risks of CdTe QDs on the development and function of nervous systems in animals.

  2. Influence of EDTA2− on the hydrothermal synthesis of CdTe nanocrystallites

    International Nuclear Information System (INIS)

    Gong Haibo; Hao Xiaopeng; Wu Yongzhong; Cao Bingqiang; Xu Hongyan; Xu Xiangang

    2011-01-01

    Transformation from Te nanorods to CdTe nanoparticles was achieved with the assistance of EDTA as a ligand under hydrothermal conditions. Experimental results showed that at the beginning of reaction Te nucleated and grew into nanorods. With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Finally, nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were obtained. The effects of EDTA on the morphology and formation of CdTe nanoparticles were discussed in consideration of the strong ligand-effect of EDTA, which greatly decreased the concentration of Cd 2+ . Furthermore, the possible formation process of CdTe nanoparticles from Te nanorods was further proposed. The crystal structure and morphology of the products were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). - Graphical Abstract: Firstly, Te nucleated and grew into nanorods in the presence of EDTA 2− . Then CdTe nucleus began to emerge on Te nanorods and finally monodispersed CdTe nanoparticles were obtained. Highlights: ► EDTA serves as a strong ligand with Cd 2+ . ► The existence of EDTA constrains the nucleation of CdTe and promotes the formation of Te nanorods. ► With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. ► Nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were finally obtained.

  3. Dewetted growth of CdTe in microgravity (STS-95)

    International Nuclear Information System (INIS)

    Fiederle, M.; Babentsov, V.; Benz, K.W.; Duffar, T.; Dusserre, P.; Corregidor, V.; Dieguez, E.; Delaye, P.; Roosen, G.; Chevrier, V.; Launay, J.C.

    2004-01-01

    Two CdTe crystals had been grown in microgravity during the STS-95 mission. The growth configuration was dedicated to obtain dewetting of the crystals and to achieve high quality material. Background for the performed experiments was based on the theory of the dewetting and previous experience. The after flight characterization of the crystals has demonstrated existence of the dewetting areas of the crystals and their improved quality regarding the earth grown reference sample. The samples had been characterized by EDAX, Synchrotron X-ray topography, Photoluminescence and Optical and IR microscopy. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. High-Efficiency, Commercial Ready CdTe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Sites, James R. [Colorado State Univ., Fort Collins, CO (United States)

    2015-11-19

    Colorado State’s F-PACE project explored several ways to increase the efficiency of CdTe solar cells and to better understand the device physics of those cells under study. Increases in voltage, current, and fill factor resulted in efficiencies above 17%. The three project tasks and additional studies are described in detail in the final report. Most cells studied were fabricated at Colorado State using an industry-compatible single-vacuum closed-space-sublimation (CSS) chamber for deposition of the key semiconductor layers. Additionally, some cells were supplied by First Solar for comparison purposes, and a small number of modules were supplied by Abound Solar.

  5. Structure of CdTe nanoparticles in glass

    Science.gov (United States)

    Hayes, T. M.; Nagpal, Swati; Persans, P. D.

    2000-03-01

    Optical long-pass wavelength filters are generally made by growing small crystallites of appropriate semiconductors in a transparent glass matrix. Depending on the semiconductor, these systems are candidates for interesting and important nonlinear optical switching applications. The structure of these nanocrystals has been shown to be a valuable indicator of the chemical and thermodynamic processes during crystallite growth and dissolution. We have used x-ray absorption spectroscopy to study the structure of the crystallites produced during heat treatment of filter glasses containing Cd and Te and producing optical absorption edges at the band gap of bulk CdTe. The results will be discussed.

  6. Magnetic circular dichroism of CdTe nanoparticles

    Science.gov (United States)

    Malakhovskii, A. V.; Sokolov, A. E.; Tsipotan, A. S.; Zharkov, S. M.; Zabluda, V. N.

    2018-04-01

    Magnetic circular dichroism (MCD) of water-soluble CdTe nanoparticles was observed in the visible spectral range for the first time. Diameter of nanoparticles varied from 2.3 to 4.5 nm. Absorption and photoluminescence spectra were also recorded. Absorption line at 19400 cm-1 and luminescent line at 18200 cm-1 were observed. Splitting of value 960 cm-1 was revealed in the MCD spectrum. Approximately the same splitting was extracted from the absorption spectrum. The MCD was identified as the temperature independent paramagnetic mixing effect. Nature of the absorption line and of its splitting are discussed.

  7. Synthesis and characterization of TGA-capped CdTe nanoparticles embedded in PVA matrix

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, S.K.; Kaur, Ramneek; Sharma, Mamta [Panjab University, Department of Physics, Center of Advanced Study in Physics, Chandigarh (India)

    2014-10-25

    This paper reports the synthesis and characterization of TGA-capped CdTe nanoparticles and its nanocomposite in a PVA matrix prepared by ex situ technique. The crystallite sizes of the CdTe nanoparticles and nanocomposite calculated from X-ray diffraction patterns are 6.07 and 7.75 nm with hexagonal structure, respectively. The spherical nature of the CdTe nanoparticles is confirmed from transmission electron microscopy measurements. Fourier transform infrared spectroscopy shows good interaction between the CdTe nanoparticles and PVA matrix. The absorption and emission spectra have also been studied. The stability of the TGA-capped CdTe nanoparticles increases after dispersion in a PVA matrix. In electrical measurements, the dark conductivity and the steady-state photoconductivity of CdTe nanocomposite thin films have been studied. The effect of temperature and intensity on the transient photoconductivity of CdTe nanocomposite is also studied. The values of differential life time have been calculated from the decay of photocurrent with time. The non-exponential decay of photoconductivity is observed indicating that the traps exist at all the energies in the band gap, making these materials suitable for various optoelectronic devices. (orig.)

  8. Synthesis and characterization of TGA-capped CdTe nanoparticles embedded in PVA matrix

    International Nuclear Information System (INIS)

    Tripathi, S.K.; Kaur, Ramneek; Sharma, Mamta

    2015-01-01

    This paper reports the synthesis and characterization of TGA-capped CdTe nanoparticles and its nanocomposite in a PVA matrix prepared by ex situ technique. The crystallite sizes of the CdTe nanoparticles and nanocomposite calculated from X-ray diffraction patterns are 6.07 and 7.75 nm with hexagonal structure, respectively. The spherical nature of the CdTe nanoparticles is confirmed from transmission electron microscopy measurements. Fourier transform infrared spectroscopy shows good interaction between the CdTe nanoparticles and PVA matrix. The absorption and emission spectra have also been studied. The stability of the TGA-capped CdTe nanoparticles increases after dispersion in a PVA matrix. In electrical measurements, the dark conductivity and the steady-state photoconductivity of CdTe nanocomposite thin films have been studied. The effect of temperature and intensity on the transient photoconductivity of CdTe nanocomposite is also studied. The values of differential life time have been calculated from the decay of photocurrent with time. The non-exponential decay of photoconductivity is observed indicating that the traps exist at all the energies in the band gap, making these materials suitable for various optoelectronic devices. (orig.)

  9. Doping of polycrystalline CdTe for high-efficiency solar cells on flexible metal foil.

    Science.gov (United States)

    Kranz, Lukas; Gretener, Christina; Perrenoud, Julian; Schmitt, Rafael; Pianezzi, Fabian; La Mattina, Fabio; Blösch, Patrick; Cheah, Erik; Chirilă, Adrian; Fella, Carolin M; Hagendorfer, Harald; Jäger, Timo; Nishiwaki, Shiro; Uhl, Alexander R; Buecheler, Stephan; Tiwari, Ayodhya N

    2013-01-01

    Roll-to-roll manufacturing of CdTe solar cells on flexible metal foil substrates is one of the most attractive options for low-cost photovoltaic module production. However, various efforts to grow CdTe solar cells on metal foil have resulted in low efficiencies. This is caused by the fact that the conventional device structure must be inverted, which imposes severe restrictions on device processing and consequently limits the electronic quality of the CdTe layer. Here we introduce an innovative concept for the controlled doping of the CdTe layer in the inverted device structure by means of evaporation of sub-monolayer amounts of Cu and subsequent annealing, which enables breakthrough efficiencies up to 13.6%. For the first time, CdTe solar cells on metal foil exceed the 10% efficiency threshold for industrialization. The controlled doping of CdTe with Cu leads to increased hole density, enhanced carrier lifetime and improved carrier collection in the solar cell. Our results offer new research directions for solving persistent challenges of CdTe photovoltaics.

  10. Performance characteristics of CdTe drift ring detector

    Science.gov (United States)

    Alruhaili, A.; Sellin, P. J.; Lohstroh, A.; Veeramani, P.; Kazemi, S.; Veale, M. C.; Sawhney, K. J. S.; Kachkanov, V.

    2014-03-01

    CdTe and CdZnTe material is an excellent candidate for the fabrication of high energy X-ray spectroscopic detectors due to their good quantum efficiency and room temperature operation. The main material limitation is associated with the poor charge transport properties of holes. The motivation of this work is to investigate the performance characteristics of a detector fabricated with a drift ring geometry that is insensitive to the transport of holes. The performance of a prototype Ohmic CdTe drift ring detector fabricated by Acrorad with 3 drift rings is reported; measurements include room temperature current voltage characteristics (IV) and spectroscopic performance. The data shows that the energy resolution of the detector is limited by leakage current which is a combination of bulk and surface leakage currents. The energy resolution was studied as a function of incident X-ray position with an X-ray microbeam at the Diamond Light Source. Different ring biasing schemes were investigated and the results show that by increasing the lateral field (i.e. the bias gradient across the rings) the active area, evaluated by the detected count rate, increased significantly.

  11. Thrombus detection using 125I-fibrinogen and a CdTe probe

    International Nuclear Information System (INIS)

    Garcia, D.A.; Frisbie, J.H.; Tow, D.E.; Sasahara, A.A.; Entine, G.

    1976-01-01

    A compact CdTe detector system was developed for use in a clinical screening test for venous thrombosis of the legs. Patients given intravenously administered autologous 125 I-fibrinogen were probed externally at selected points on the thighs and calves for abnormal accumulations of radioactivity. Measurements made with the CdTe probe were compared to those obtained with a standard portable NaI detector system. The CdTe probe was the equal of the NaI detector in diagnostic capability. The compact design of the semiconductor system considerably eased the probing procedure, especially in bedridden patients with limited mobility of the extremities

  12. Interaction and energy transfer studies between bovine serum albumin and CdTe quantum dots conjugates: CdTe QDs as energy acceptor probes.

    Science.gov (United States)

    Kotresh, M G; Inamdar, L S; Shivkumar, M A; Adarsh, K S; Jagatap, B N; Mulimani, B G; Advirao, G M; Inamdar, S R

    2017-06-01

    In this paper, a systematic investigation of the interaction of bovine serum albumin (BSA) with water-soluble CdTe quantum dots (QDs) of two different sizes capped with carboxylic thiols is presented based on steady-state and time-resolved fluorescence measurements. Efficient Förster resonance energy transfer (FRET) was observed to occur from BSA donor to CdTe acceptor as noted from reduction in the fluorescence of BSA and enhanced fluorescence from CdTe QDs. FRET parameters such as Förster distance, spectral overlap integral, FRET rate constant and efficiency were determined. The quenching of BSA fluorescence in aqueous solution observed in the presence of CdTe QDs infers that fluorescence resonance energy transfer is primarily responsible for the quenching phenomenon. Bimolecular quenching constant (k q ) determined at different temperatures and the time-resolved fluorescence data provide additional evidence for this. The binding stoichiometry and various thermodynamic parameters are evaluated by using the van 't Hoff equation. The analysis of the results suggests that the interaction between BSA and CdTe QDs is entropy driven and hydrophobic forces play a key role in the interaction. Binding of QDs significantly shortened the fluorescence lifetime of BSA which is one of the hallmarks of FRET. The effect of size of the QDs on the FRET parameters are discussed in the light of FRET parameters obtained. Copyright © 2016 John Wiley & Sons, Ltd.

  13. Se-Se isoelectronic centers in high purity CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Najjar, Rita; Andre, Regis; Mariette, Henri [CEA-CNRS, Nanophysique et Semiconducteurs, Institut Neel, 25 rue des martyrs, 38042 Grenoble (France); Golnik, Andrzej; Kossacki, Piotr; Gaj, Jan A. [Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw (Poland)

    2010-06-15

    We evidence zero-dimensional exciton states trapped on isoelectronic Se centers in CdTe quantum wells, {delta}-doped with Se. Thanks to special precautions taken to have very high purity CdTe heterostructures, it is possible to observe, in photoluminescence spectra, sharp discrete lines arising from individual centers related to the Se doping. These emission lines appear at about 40 meV below the CdTe band gap energy. The most prominent lines are attributed to the recombination of excitons bound to nearest-neighbor selenium pairs in a tetrahedral CdTe environment. This assignment is confirmed by a common linear polarization direction of the emitted light, parallel to <110>. These excitons localized on individual isoelectronic traps are good candidates as single photon emitters (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Defect complexes formed with Ag atoms in CDTE, ZnTe, and ZnSe

    CERN Document Server

    Wolf, H; Ostheimer, V; Hamann, J; Lany, S; Wichert, T

    2000-01-01

    Using the radioactive acceptor $^{111}\\!$Ag for perturbed $\\gamma$-$\\gamma$-angular correlation (PAC) spectroscopy for the first time, defect complexes formed with Ag are investigated in the II-VI semiconductors CdTe, ZnTe and ZnSe. The donors In, Br and the Te-vacancy were found to passivate Ag acceptors in CdTe via pair formation, which was also observed in In-doped ZnTe. In undoped or Sb-doped CdTe and in undoped ZnSe, the PAC experiments indicate the compensation of Ag acceptors by the formation of double broken bond centres, which are characterised by an electric field gradient with an asymmetry parameter close to h = 1. Additionally, a very large electric field gradient was observed in CdTe, which is possibly connected with residual impurities.

  15. Investigation of the chlorine A-Center in polycrystalline CdTe layers by photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kraft, Christian; Metzner, Heiner; Haedrich, Mathias [Institut fuer Festkoerperphysik, Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Schley, Pascal [Institut fuer Physik, Technische Universitaet Ilmenau, 98684 Ilmenau (Germany); Goldhahn, Ruediger [Institut fuer Experimentelle Physik, Universitaet Magdeburg, 39016 Magdeburg (Germany)

    2012-07-01

    Polycrystalline CdTe is a well known absorber material for thin film solar cells. However, the improvement of CdTe-based solar cells for industrial application is mainly based on empirical enhancements of certain process steps which are not concerning the absorber itself. Hence, the defect structure of CdTe is still not understood in detail. One of the most discussed defects in CdTe is the so called chlorine A-center. In general, the A-Center describes a defect complex of the intrinsic cadmium vacancy defect and an extrinsic impurity. By means of photoluminescence spectroscopy at temperatures of 5 K we investigated the behavior of the chlorine A-center under different CdTe activation techniques. Therefore, we were able to determine the electronic level of that defect and to analyze its influence on the crystal quality and the functionality of solar cells that were prepared of the corresponding samples.

  16. Design Strategies for High-Efficiency CdTe Solar Cells

    Science.gov (United States)

    Song, Tao

    With continuous technology advances over the past years, CdTe solar cells have surged to be a leading contributor in thin-film photovoltaic (PV) field. While empirical material and device optimization has led to considerable progress, further device optimization requires accurate device models that are able to provide an in-depth understanding of CdTe device physics. Consequently, this thesis is intended to develop a comprehensive model system for high-efficiency CdTe devices through applying basic design principles of solar cells with numerical modeling and comparing results with experimental CdTe devices. The CdTe absorber is central to cell performance. Numerical simulation has shown the feasibility of high energy-conversion efficiency, which requires both high carrier density and long minority carrier lifetime. As the minority carrier lifetime increases, the carrier recombination at the back surface becomes a limitation for cell performance with absorber thickness cell performance, since it can induce a large valence-band bending which suppresses the hole injection near the interface for the electron-hole recombination, but too large a spike is detrimental to photocurrent transport. In a heterojunction device with many defects at the emitter/absorber interface (high SIF), a thin and highly-doped emitter can induce strong absorber inversion and hence help maintain good cell performance. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. In terms of specific emitter materials, the calculations suggest that the (Mg,Zn)O alloy with 20% Mg, or a similar type-I heterojunction partner with moderate DeltaE C (e.g., Cd(S,O) or (Cd,Mg)Te with appropriate oxygen or magnesium ratios) should yield higher voltages and would therefore be better candidates for the CdTe-cell emitter. The CdTe/substrate interface is also of great importance, particularly in the growth of epitaxial

  17. RHEED studies of MBE growth mechanisms of CdTe and CdMnTe

    Energy Technology Data Exchange (ETDEWEB)

    Waag, A.; Behr, T.; Litz, T.; Kuhn-Heinrich, B.; Hommel, D.; Landwehr, G. (Physikalisches Inst., Univ. Wuerzburg (Germany))

    1993-01-30

    We report on reflection high energy electron diffraction (RHEED) studies of molecular beam epitaxy (MBE) growth of CdTe and CdMnTe on (100) oriented CdTe substrates. RHEED oscillations were measured for both the growth and desorption of CdTe and CdMnTe as a function of flux and temperature. For the first time, the influence of laser and electron irradiation on the growth rate, as well as desorption, of CdTe is studied in detail using RHEED oscillations. We found a very small effect on the growth rate as well as on the CdTe desorption rate. The growth rate of CdTe was determined for different temperatures and CdTe flux ratios. The obtained experimental results are compared with a kinetic growth model to get information on the underlying growth processes, taking into account the influence of a precursor by including surface diffusion. From the comparison between model and experimental results the sticking coefficients of Cd and Te are determined. The growth rate of CdMnTe increases with Mn flux. This dependence can be used to calibrate the Mn content during growth by comparing the growth rate of CdTe with the growth rate of CdMnTe. The change in growth rate has been correlated with Mn content via photoluminescence measurements. In addition, the sticking coefficient of Mn is derived by comparing experimental results with a kinetic growth model. For high manganese content a transition to three-dimensional growth occurs. (orig.).

  18. Identification of a type of defects in CdTe crystals by the piezo spectroscopic method

    International Nuclear Information System (INIS)

    Tarbajev, M.Yi.

    1999-01-01

    The dependence of line shifts and the photoluminescence line intensity of bound exciton complexes on the direction of elastic deformation are studied for CdTe crystals at 4.2 K. On the basis of the found differences in piezo optic behavior of excitons bound to neutral donors and acceptors, the method of identification of a type of defects in CdTe crystals is proposed

  19. On the doping problem of CdTe films: The bismuth case

    Energy Technology Data Exchange (ETDEWEB)

    Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Brown, M. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Ruiz, C.M. [Depto. Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Vidal-Borbolla, M.A. [Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Lomas 4a. Secc., 78210 San Luis Potosi, SLP (Mexico); Ramirez-Bon, R. [CINVESTAV-IPN, U. Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico); Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)], E-mail: mtufinovel@yahoo.com.mx; Calixto, M. Estela [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Compaan, A.D. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)

    2008-08-30

    The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10{sup 13} cm{sup -3}, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10{sup 15} cm{sup -3}. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.

  20. Synthesis and characterization of CdTe quantum dots by one-step method

    Directory of Open Access Journals (Sweden)

    H. Li

    2013-09-01

    Full Text Available L-Cysteine (Cys-capped CdTe quantum dots (QDs were prepared when sodium tellurite worked as a tellurium source and sodium borohydride acted as a reductant. The influences of various experimental variables, including pH values, Cd/Te and Cd/Cys molar ratios, on the photoluminescence (PL quantum yield (QY of the obtained CdTe QDs have been systematically investigated. Experimental results indicated that green to red emitting CdTe QDs with maximum quantum yield of 19.4% can be prepared at pH 11.5 and n(Cd2+:n(Te2−:n(Cys = 1:0.07:2.0. X-Ray powder diffraction (XRD and transmission electron microscopy (TEM were used to characterize the crystal structure and shape of CdTe QDs. The results showed that the prepared CdTe QDs were of cubic zinc blend crystal structure in a sphere-like shape.DOI: http://dx.doi.org/10.4314/bcse.v27i3.7

  1. On the doping problem of CdTe films: The bismuth case

    International Nuclear Information System (INIS)

    Vigil-Galan, O.; Brown, M.; Ruiz, C.M.; Vidal-Borbolla, M.A.; Ramirez-Bon, R.; Sanchez-Meza, E.; Tufino-Velazquez, M.; Calixto, M. Estela; Compaan, A.D.; Contreras-Puente, G.

    2008-01-01

    The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10 13 cm -3 , depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10 15 cm -3 . Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented

  2. Physical vapor deposition of CdTe thin films at low temperature for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Heisler, Christoph; Brueckner, Michael; Lind, Felix; Kraft, Christian; Reisloehner, Udo; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, University of Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

    2012-07-01

    Cadmium telluride is successfully utilized as an absorber material for thin film solar cells. Industrial production makes use of high substrate temperatures for the deposition of CdTe absorber layers. However, in order to exploit flexible substrates and to simplify the manufacturing process, lower deposition temperatures are beneficial. Based on the phase diagram of CdTe, predictions on the stoichiometry of CdTe thin films grown at low substrate temperatures are made in this work. These predictions were verified experimentally using additional sources of Cd and Te during the deposition of the CdTe thin films at different substrate temperatures. The deposited layers were analyzed with energy-dispersive X-ray spectroscopy. In case of CdTe layers which were deposited at substrate temperatures lower than 200 C without usage of additional sources we found a non-stoichiometric growth of the CdTe layers. The application of the additional sources leads to a stoichiometric growth for substrate temperatures down to 100 C which is a significant reduction of the substrate temperature during deposition.

  3. Glutathione-capped CdTe nanocrystals as probe for the determination of fenbendazole

    Science.gov (United States)

    Li, Qin; Tan, Xuanping; Li, Jin; Pan, Li; Liu, Xiaorong

    2015-04-01

    Water-soluble glutathione (GSH)-capped CdTe quantum dots (QDs) were synthesized. In pH 7.1 PBS buffer solution, the interaction between GSH-capped CdTe QDs and fenbendazole (FBZ) was investigated by spectroscopic methods, including fluorescence spectroscopy, ultraviolet-visible absorption spectroscopy, and resonance Rayleigh scattering (RRS) spectroscopy. In GSH-capped CdTe QDs solution, the addition of FBZ results in the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs. And the quenching intensity (enhanced RRS intensity) was proportional to the concentration of FBZ in a certain range. Investigation of the interaction mechanism, proved that the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs by FBZ is the result of electrostatic attraction. Based on the quenching of fluorescence (enhancement of RRS) of GSH-capped CdTe QDs by FBZ, a novel, simple, rapid and specific method for FBZ determination was proposed. The detection limit for FBZ was 42 ng mL-1 (3.4 ng mL-1) and the quantitative determination range was 0-2.8 μg mL-1 with a correlation of 0.9985 (0.9979). The method has been applied to detect FBZ in real simples and with satisfactory results.

  4. Defect creation rates in CdTe irradiated by electrons

    International Nuclear Information System (INIS)

    Caillot, M.

    1978-01-01

    Up to now, the defect creation rates in CdTe irradiated by electrons were unknown. They have been calculated for different electron kinetic energies. As the samples studied are thick, the energy loss when the electrons penetrate the material has been taken into account. The cross-sections of Cd and Te displacements vs the depth of electron penetration were determined for different electron kinetic energies, and the defect creation rates obtained for each sublattice. These creation rates have been compared with those deduced from experiments and it was found that the experimental creation rates were lower than the calculated ones. This discrepancy can be explained in terms of creation of neutral Frenkel pairs. (Auth.)

  5. Emitter/absorber interface of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Song, Tao, E-mail: tsong241@gmail.com; Sites, James R. [Physics Department, Colorado State University, Fort Collins, Colorado 80523 (United States); Kanevce, Ana [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2016-06-21

    The performance of CdTe solar cells can be very sensitive to the emitter/absorber interface, especially for high-efficiency cells with high bulk lifetime. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e., defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV ≤ ΔE{sub C} ≤ 0.3 eV) can help maintain good cell efficiency in spite of high interface defect density, much like with Cu(In,Ga)Se{sub 2} (CIGS) cells. The basic principle is that positive ΔE{sub C}, often referred to as a “spike,” creates an absorber inversion and hence a large hole barrier adjacent to the interface. As a result, the electron-hole recombination is suppressed due to an insufficient hole supply at the interface. A large spike (ΔE{sub C} ≥ 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a “cliff” (ΔE{sub C} < 0 eV) allows high hole concentration in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. Another way to mitigate performance losses due to interface defects is to use a thin and highly doped emitter, which can invert the absorber and form a large hole barrier at the interface. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. The ΔE{sub C} of other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ΔE{sub C}. These

  6. Recent Developments of Flexible CdTe Solar Cells on Metallic Substrates: Issues and Prospects

    Directory of Open Access Journals (Sweden)

    M. M. Aliyu

    2012-01-01

    Full Text Available This study investigates the key issues in the fabrication of CdTe solar cells on metallic substrates, their trends, and characteristics as well as effects on solar cell performance. Previous research works are reviewed while the successes, potentials, and problems of such technology are highlighted. Flexible solar cells offer several advantages in terms of production, cost, and application over glass-based types. Of all the metals studied as substrates for CdTe solar cells, molybdenum appears the most favorable candidate, while close spaced sublimation (CSS, electrodeposition (ED, magnetic sputtering (MS, and high vacuum thermal evaporation (HVE have been found to be most common deposition technologies used for CdTe on metal foils. The advantages of these techniques include large grain size (CSS, ease of constituent control (ED, high material incorporation (MS, and low temperature process (MS, HVE, ED. These invert-structured thin film CdTe solar cells, like their superstrate counterparts, suffer from problems of poor ohmic contact at the back electrode. Thus similar strategies are applied to minimize this problem. Despite the challenges faced by flexible structures, efficiencies of up to 13.8% and 7.8% have been achieved in superstrate and substrate cell, respectively. Based on these analyses, new strategies have been proposed for obtaining cheaper, more efficient, and viable flexible CdTe solar cells of the future.

  7. Studying nanotoxic effects of CdTe quantum dots in Trypanosoma cruzi

    Directory of Open Access Journals (Sweden)

    Cecilia Stahl Vieira

    2011-03-01

    Full Text Available Semiconductor nanoparticles, such as quantum dots (QDs, were used to carry out experiments in vivo and ex vivo with Trypanosoma cruzi. However, questions have been raised regarding the nanotoxicity of QDs in living cells, microorganisms, tissues and whole animals. The objective of this paper was to conduct a QD nanotoxicity study on living T. cruzi protozoa using analytical methods. This was accomplished using in vitro experiments to test the interference of the QDs on parasite development, morphology and viability. Our results show that after 72 h, a 200 μM cadmium telluride (CdTe QD solution induced important morphological alterations in T. cruzi, such as DNA damage, plasma membrane blebbing and mitochondrial swelling. Flow cytometry assays showed no damage to the plasma membrane when incubated with 200 μM CdTe QDs for up to 72 h (propidium iodide cells, giving no evidence of classical necrosis. Parasites incubated with 2 μM CdTe QDs still proliferated after seven days. In summary, a low concentration of CdTe QDs (2 μM is optimal for bioimaging, whereas a high concentration (200 μM CdTe could be toxic to cells. Taken together, our data indicate that 2 μM QD can be used for the successful long-term study of the parasite-vector interaction in real time.

  8. [Oxidative damage effects induced by CdTe quantum dots in mice].

    Science.gov (United States)

    Xie, G Y; Chen, W; Wang, Q K; Cheng, X R; Xu, J N; Huang, P L

    2017-07-20

    Objective: To investigate Oxidative damage effects induced by CdTe Quantum Dots (QDs) in mice. Methods: 40 ICR mice were randomly divided into 5 groups: one control group (normal saline) ; four CdTe QDs (exposed by intravenous injection of 0.2 ml of CdTe QDs at the concentration of 0、0.5、5.0、50.0 and 500.0 nmol/ml respectively) . After 24 h, the mice were decapitated and the blood was collected for serum biochemically indexes、hematology indexes, the activities of SOD、GSH-Px and the concentration of MDA were all detected. Results: The results showed in the four CdTe QDs exposure groups, the level of CRE、PLT and the concentration of MDA were all significantly lower than those of the control group ( P control group ( P <0.01) . Conclusion: It was suggested that CdTe QDs at 0.5 nmol/ml could induce Oxidative damage effects in mice.

  9. Influence of the layer parameters on the performance of the CdTe solar cells

    Science.gov (United States)

    Haddout, Assiya; Raidou, Abderrahim; Fahoume, Mounir

    2018-03-01

    Influence of the layer parameters on the performances of the CdTe solar cells is analyzed by SCAPS-1D. The ZnO: Al film shows a high efficiency than SnO2:F. Moreover, the thinner window layer and lower defect density of CdS films are the factor in the enhancement of the short-circuit current density. As well, to increase the open-circuit voltage, the responsible factors are low defect density of the absorbing layer CdTe and high metal work function. For the low cost of cell production, ultrathin film CdTe cells are used with a back surface field (BSF) between CdTe and back contact, such as PbTe. Further, the simulation results show that the conversion efficiency of 19.28% can be obtained for the cell with 1-μm-thick CdTe, 0.1-μm-thick PbTe and 30-nm-thick CdS.

  10. Photoluminescence of CdTe nanocrystals grown by pulsed laser ablation on a template of Si nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Guillen-Cervantes, A.; Silva-Lopez, H.; Becerril-Silva, M.; Arias-Ceron, J.S.; Campos-Gonzalez, E.; Zelaya-Angel, O. [CINVESTAV-IPN, Physics Department, Apdo. Postal 14-740, Mexico (Mexico); Medina-Torres, A.C. [Escuela Superior de Fisica y Matematicas del IPN, Mexico (Mexico)

    2014-11-12

    CdTe nanocrystals were grown on eroded Si (111) substrates at room temperature by pulsed laser ablation. Before growth, Si substrates were subjected to different erosion time in order to investigate the effect on the CdTe samples. The erosion process consists of exposition to a pulsed high-voltage electric arc. The surface consequence of the erosion process consists of Si nanoparticles which acted as a template for the growth of CdTe nanocrystals. CdTe samples were studied by X-ray diffraction (XRD), room temperature photoluminescence (RT PL) and high-resolution transmission electron microscopy (HRTEM). CdTe nanocrystals grew in the stable cubic phase, according to XRD spectra. A strong visible emission was detected in photoluminescence (PL) experiments. The PL signal was centered at 540 nm (∝2.34 eV). With the effective mass approximation, the size of the CdTe crystals was estimated around 3.5 nm. HRTEM images corroborated the physical characteristics of CdTe nanocrystals. These results could be useful for the development of CdTe optoelectronic devices. (orig.)

  11. Photoluminescence properties of a novel conjugate of water-soluble CdTe quantum dots to guanine

    Energy Technology Data Exchange (ETDEWEB)

    Feng Xuejiao [North-East Normal University, Changchun 130024 (China); Shang, Qingkun, E-mail: shangqk995@nenu.edu.c [North-East Normal University, Changchun 130024 (China); Liu Hongjian [Relia Diagnostic Systems, Burlingame, CA 94010 (United States); Wang Wenlan; Wang Zhidan; Liu Junyu [North-East Normal University, Changchun 130024 (China)

    2010-04-15

    A novel conjugate of water-soluble CdTe quantum dots to a small biomolecule guanine has been obtained in aqueous phase. The photoluminescence property and the stability of the conjugate increased comparing to CdTe QDs. The interaction between CdTe QDs and guanine was studied by TEM, fluorescence microscope and photoluminescence (PL), IR, UV-Vis spectra. The effects of reflux time, pH value, ionic strength, and the ratio of CdTe QDs to guanine on the photoluminescence properties of conjugate were investigated in detail. The results show that guanine has a great influence on both the photoluminescence property and stability of thioglycolic acid-stabilized CdTe QDs. The formation of coordination and hydrogen bond between guanine molecules and CdTe including thioglycolic acid on its surface may effectively enhance the PL intensity and stability of CdTe QDs. The maximum PL intensity of the conjugate was obtained on the condition with lower ionic strength, less than 30 min reflux time, neutral pH value and 6/1 as molar ratio of guanine to CdTe.

  12. A computational study on the energy bandgap engineering in performance enhancement of CdTe thin film solar cells

    Directory of Open Access Journals (Sweden)

    Ameen M. Ali

    Full Text Available In this study, photovoltaic properties of CdTe thin film in the configuration of n-SnO2/n-CdS/p-CdTe/p-CdTe:Te/metal have been studied by numerical simulation software named “Analysis of Microelectronic and Photonic Structure” (AMPS-1D. A modified structure for CdTe thin film solar cell has been proposed by numerical analysis with the insertion of a back contact buffer layer (CdTe:Te. This layer can serve as a barrier that will decelerate the copper diffusion in CdTe solar cell. Four estimated energy bandgap relations versus the Tellurium (Te concentrations and the (CdTe:Te layer thickness have been examined thoroughly during simulation. Correlation between energy bandgap with the CdTe thin film solar cell performance has also been established. Keywords: Numerical modelling, CdTe thin film, Solar cell, AMPS-1D, Bandgap

  13. CdTe detector based PIXE mapping of geological samples

    Energy Technology Data Exchange (ETDEWEB)

    Chaves, P.C., E-mail: cchaves@ctn.ist.utl.pt [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Taborda, A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Oliveira, D.P.S. de [Laboratório Nacional de Energia e Geologia (LNEG), Apartado 7586, 2611-901 Alfragide (Portugal); Reis, M.A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal)

    2014-01-01

    A sample collected from a borehole drilled approximately 10 km ESE of Bragança, Trás-os-Montes, was analysed by standard and high energy PIXE at both CTN (previous ITN) PIXE setups. The sample is a fine-grained metapyroxenite grading to coarse-grained in the base with disseminated sulphides and fine veinlets of pyrrhotite and pyrite. Matrix composition was obtained at the standard PIXE setup using a 1.25 MeV H{sup +} beam at three different spots. Medium and high Z elemental concentrations were then determined using the DT2fit and DT2simul codes (Reis et al., 2008, 2013 [1,2]), on the spectra obtained in the High Resolution and High Energy (HRHE)-PIXE setup (Chaves et al., 2013 [3]) by irradiation of the sample with a 3.8 MeV proton beam provided by the CTN 3 MV Tandetron accelerator. In this paper we present results, discuss detection limits of the method and the added value of the use of the CdTe detector in this context.

  14. Medipix2 based CdTe microprobe for dental imaging

    International Nuclear Information System (INIS)

    Vykydal, Z; Jakubek, J; Fauler, A; Fiederle, M; Zwerger, A; Svestkova, M

    2011-01-01

    Medical imaging devices and techniques are demanded to provide high resolution and low dose images of samples or patients. Hybrid semiconductor single photon counting devices together with suitable sensor materials and advanced techniques of image reconstruction fulfil these requirements. In particular cases such as the direct observation of dental implants also the size of the imaging device itself plays a critical role. This work presents the comparison of 2D radiographs of tooth provided by a standard commercial dental imaging system (Gendex 765DC X-ray tube with VisualiX scintillation detector) and two Medipix2 USB Lite detectors one equipped with a Si sensor (300 μm thick) and one with a CdTe sensor (1 mm thick). Single photon counting capability of the Medipix2 device allows virtually unlimited dynamic range of the images and thus increases the contrast significantly. The dimensions of the whole USB Lite device are only 15 mm × 60 mm of which 25% consists of the sensitive area. Detector of this compact size can be used directly inside the patients' mouth.

  15. Band-edge photoluminescence in CdTe

    International Nuclear Information System (INIS)

    Horodysky, P.; Grill, R.; Hlidek, P.

    2006-01-01

    Near band-gap photoluminescence (PL) and absorption of bulk crystals of CdTe were measured over a wide range of temperatures (4-500 K). It is demonstrated that the high-temperature (above 150 K) PL intensity correlates with a lower quality of the samples and quasiparticle localization induced by the crystal potential fluctuations. The influence of the high absorption coefficient at the free-exciton resonance energy on the PL spectra is analytically studied by solving the diffusion-recombination equation. We show that the reabsorption of the radiation by the free-exciton states creates two illusory PL maxima. No dead surface layer is needed to explain reabsorption effects. The room-temperature PL maximum matches neither the free-exciton resonance nor the band-gap energy. The high temperature PL is explained by the recombination of electrons and holes localized on potential fluctuations. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. CdTe reflection anisotropy line shape fitting

    International Nuclear Information System (INIS)

    Molina-Contreras, J.R.

    2010-01-01

    In this paper, an empirical novel plane-wave time dependent ensemble is introduced to fit the RA, the reflectance (R) and the imaginary part of the dielectric function oscillation measured around the E 1 and E 1 + Δ 1 transition region in II-VI semiconductors. By applying the new plane-wave time dependent ensemble to the measured spectrum for a (0 0 1) oriented CdTe undoped commercial wafer, crystallized in a zinc-blende structure, a very good agreement was found between the measured spectrum and the fitting. In addition to this, the reliability of the plane-wave time dependent ensemble was probed, by comparing the results with the calculated fitting in terms of a Fourier series and in terms of a six-order polynomial fit. Our analysis suggests, that the experimental oscillation in the line shape of the RA cannot be fitted with a Fourier series using harmonics multiples of the number which dominates the measured RA spectra in the argument of the plane-wave ensemble.

  17. Ion implantation of CdTe single crystals

    International Nuclear Information System (INIS)

    Wiecek, Tomasz; Popovich, Volodymir; Bester, Mariusz; Kuzma, Marian

    2017-01-01

    Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic devices production. For other semiconductor materials this technique is still at an early stage. In this paper based on literature data we present the main features of the implantation of CdTe single crystals as well as some of the major problems which are likely to occur when dealing with them. The most unexpected feature is the high resistance of these crystals against the amorphization caused by ion implantation even at high doses (10"1"7 1/cm"2). The second property is the disposal of defects much deeper in the sample then it follows from the modeling calculations. The outline of principles of the ion implantation is included in the paper. The data based on RBS measurements and modeling results obtained by using SRIM software were taken into account.

  18. Impedance spectroscopy of CdTe thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Weiss, Charlotte; Heisler, Christoph; Reisloehner, Udo; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, University of Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

    2012-07-01

    Impedance Spectroscopy (IS) is a widely used method to analyze dielectric properties of specimen as a function of frequency. Typically this characterization method delivers an equivalent circuit diagram of the device under examination to describe its electrical properties. Traditionally IS is used in coating evaluation, corrosion monitoring and in electrochemistry. During the last years the method became more important also in the field of electrical characterization of solar cells. In our work we use IS for the electrical characterization of thin film CdTe solar cells. The measurement is done at room temperature without illumination in a frequency domain from 20 Hz to 2 MHz. The samples are measured under variable forward bias. The results match insufficiently with the model of two resistor-capacitor circuits in series which is commonly used to describe the p-n junction and the blocking back contact. For better consistency, other models from the literature are used and discussed. From the results a conclusion is drawn about the properties of the solar cell such as the nature of the p-n junction or the performance of the back contact.

  19. Heavy doping of CdTe single crystals by Cr ion implantation

    Science.gov (United States)

    Popovych, Volodymyr D.; Böttger, Roman; Heller, Rene; Zhou, Shengqiang; Bester, Mariusz; Cieniek, Bogumil; Mroczka, Robert; Lopucki, Rafal; Sagan, Piotr; Kuzma, Marian

    2018-03-01

    Implantation of bulk CdTe single crystals with high fluences of 500 keV Cr+ ions was performed to achieve Cr concentration above the equilibrium solubility limit of this element in CdTe lattice. The structure and composition of the implanted samples were studied using secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) to characterize the incorporation of chromium into the host lattice and to investigate irradiation-induced damage build-up. It was found that out-diffusion of Cr atoms and sputtering of the targets alter the depth distribution and limit concentration of the projectile ions in the as-implanted samples. Appearance of crystallographically oriented, metallic α-Cr nanoparticles inside CdTe matrix was found after implantation, as well as a strong disorder at the depth far beyond the projected range of the implanted ions.

  20. The next generation CdTe technology- Substrate foil based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ferekides, Chris [Univ. of South Florida, Tampa, FL (United States)

    2017-03-22

    The main objective of this project was the development of one of the most promising Photovoltaic (PV) materials CdTe into a versatile, cost effective, and high throughput technology, by demonstrating substrate devices on foil substrates using high throughput fabrication conditions. The typical CdTe cell is of the superstrate configuration where the solar cell is fabricated on a glass superstrate by the sequential deposition of a TCO, n-type heterojunction partner, p-CdTe absorber, and back contact. Large glass modules are heavy and present significant challenges during manufacturing (uniform heating, etc.). If a substrate CdTe cell could be developed (the main goal of this project) a roll-to-toll high throughput technology could be developed.

  1. Optimization of material/device parameters of CdTe photovoltaic for solar cells applications

    Science.gov (United States)

    Wijewarnasuriya, Priyalal S.

    2016-05-01

    Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ~1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).

  2. Growth and optical characterization of colloidal CdTe nanoparticles capped by a bifunctional molecule

    Energy Technology Data Exchange (ETDEWEB)

    Abd El-sadek, M.S., E-mail: el_sadek_99@email.co [Nanomaterial Laboratory, Physics Department, Faculty of Science, South Valley University, Qena-83523 (Egypt); Crystal Growth Centre, Anna University Chennai, Chennai-600025 (India); Moorthy Babu, S. [Crystal Growth Centre, Anna University Chennai, Chennai-600025 (India)

    2010-08-15

    Thiol-capped CdTe nanoparticles were synthesized in aqueous solution by wet chemical route. CdTe nanoparticles with bifunctional molecule mercaptoacetic acid as a stabilizer were synthesized at pH{approx}11.2 and using potassium tellurite as tellurium source. The effect of refluxing time on the preparation of these samples was measured using UV-vis absorption and photoluminescence analysis. By increasing the refluxing time the UV-vis absorption and photoluminescence results show that the band edge emission is redshifted. The synthesized thiol-capped CdTe were characterized with FT-IR, TEM and TG-DTA. The particle size was calculated by the effective mass approximation (EMA). The role of precursors, their composition, pH and reaction procedure on the development of nanoparticles are analyzed.

  3. Physical and optical properties of size-selective CdTe nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Fok, Alice [Department of Chemistry, The City College of New York, CUNY New York, NY 10031 (United States); Morales, Jorge [Department of Biology, City College of New York, CUNY New York, NY 10031 (United States); Sohel, Mohammad [Natural Sciences Department, Hostos College, CUNY Bronx, NY 10451 (United States)

    2010-06-15

    Physical and optical properties of colloidal cadmium telluride nanocrystals (CdTe NCs) were investigated. The CdTe NCs were synthesized by reacting elemental tellurium dissolved in tributylphosphine with a mixture of cadmium oxide, octadecene, and oleic acid. These NCs, which were characterized by transmission electron microscopy (TEM) are spherical and ranged from 5 to 7 nm in diameter. The identity of the compound post-synthesis was confirmed by X-Ray diffraction (XRD) patterns. UV-Vis and photoluminescence (PL) properties as grown and pure CdTe samples were investigated. Bright excitonic photoluminescence emission was observed (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. One-step synthesis of CdTe branched nanowires and nanorod arrays

    International Nuclear Information System (INIS)

    Hou Junwei; Yang Xiuchun; Lv Xiaoyi; Peng Dengfeng; Huang Min; Wang Qingyao

    2011-01-01

    Single crystalline CdTe branched nanowires and well-aligned nanorod arrays were simultaneously synthesized by a simple chemical vapor deposition (CVD) technique. X-ray diffraction (XRD), scanning electronic microscopy (SEM), transmission electronic microscopy (TEM) and selected area electronic diffraction (SAED) were used to study the crystalline structure, composition and morphology of different samples. Vapor-liquid-solid (VLS) and vapor-solid (VS) processes were proposed for the formation of the CdTe branched nanowires and nanorod arrays, respectively. As-grown CdTe nanorod arrays show a strong red emission band centered at about 620 nm, which can be well fitted by two Gaussian curves centered at 610 nm and 635 nm, respectively.

  5. Electrochemical Determination of Uric Acid at CdTe Quantum Dot Modified Glassy Carbon Electrodes.

    Science.gov (United States)

    Pan, Deng; Rong, Shengzhong; Zhang, Guangteng; Zhang, Yannan; Zhou, Qiang; Liu, Fenghai; Li, Miaojing; Chang, Dong; Pan, Hongzhi

    2015-01-01

    Cyclic voltammetry and differential pulse voltammetry were used to investigate the electrochemical behavior of uric acid (UA) at a CdTe quantum dot (QD) modified the glassy carbon electrode (GCE). CdTe QDs, as new semiconductor nanocrystals, can greatly improve the peak current of UA. The anodic peak current of UA was linear with its concentration between 1.0×10(-6) and 4.0×10(-4) M in 0.1 M pH 5.0 phosphate buffer solution. The LOD for UA at the CdTe electrode (1.0×10(-7) M) was superior to that of the GCE. In addition, we also determined the effects of scan rate, pH, and interferences of UA for the voltammetric behavior and detection. The results indicated that modified electrode possessed excellent reproducibility and stability. Finally, a new and efficient electrochemical sensor for detecting UA was developed.

  6. Microstructural, optical and electrical properties of Cl-doped CdTe single crystals

    Directory of Open Access Journals (Sweden)

    Choi Hyojeong

    2016-09-01

    Full Text Available Microstructural, optical and electrical properties of Cl-doped CdTe crystals grown by the low pressure Bridgman (LPB method were investigated for four different doping concentrations (unintentionally doped, 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3 and three different locations within the ingots (namely, samples from top, middle and bottom positions in the order of the distance from the tip of the ingot. It was shown that Cl dopant suppressed the unwanted secondary (5 1 1 crystalline orientation. Also, the average size and surface coverage of Te inclusions decreased with an increase in Cl doping concentration. Spectroscopic ellipsometry measurements showed that the optical quality of the Cl-doped CdTe single crystals was enhanced. The resistivity of the CdTe sample doped with Cl at the 1.99 × 1020 cm−3 was above 1010 Ω.cm.

  7. CdTe Quantum Dots Embedded in Multidentate Biopolymer Based on Salep: Characterization and Optical Properties

    Directory of Open Access Journals (Sweden)

    Ghasem Rezanejade Bardajee

    2013-01-01

    Full Text Available This paper describes a novel method for surface modification of water soluble CdTe quantum dots (QDs by using poly(acrylic acid grafted onto salep (salep-g-PAA as a biopolymer. As-prepared CdTe-salep-g-PAA QDs were characterized by Fourier transform infrared (FT-IR spectrum, thermogravimetric (TG analysis, and transmission electron microscopy (TEM. The absorption and fluorescence emission spectra were measured to investigate the effect of salep-g-PAA biopolymer on the optical properties of CdTe QDs. The results showed that the optical properties of CdTe QDs were significantly enhanced by using salep-g-PAA-based biopolymer.

  8. Tests of UFXC32k chip with CdTe pixel detector

    Science.gov (United States)

    Maj, P.; Taguchi, T.; Nakaye, Y.

    2018-02-01

    The paper presents the performance of the UFXC32K—a hybrid pixel detector readout chip working with CdTe detectors. The UFXC32K has a pixel pitch of 75 μm and can cope with both input signal polarities. This functionality allows operating with widely used silicon sensors collecting holes and CdTe sensors collecting electrons. This article describes the chip focusing on solving the issues connected to high-Z sensor material, namely high leakage currents, slow charge collection time and thick material resulting in increased charge-sharring effects. The measurements were conducted with higher X-ray energies including 17.4 keV from molybdenum. Conclusions drawn inside the paper show the UFXC32K's usability for CdTe sensors in high X-ray energy applications.

  9. A new MBE CdTe photoconductor array detector for X-ray applications

    International Nuclear Information System (INIS)

    Yoo, S.S.; Sivananthan, S.; Faurie, J.P.; Rodricks, B.; Bai, J.; Montano, P.A.; Argonne National Lab., IL

    1994-10-01

    A CdTe photoconductor array x-ray detector was grown using Molecular Beam Epitaxially (MBE) on a Si (100) substrate. The temporal response of the photoconductor arrays is as fast as 21 psec risetime and 38 psec Full Width Half Maximum (FWHM). Spatial and energy responses were obtained using x-rays from a rotating anode and synchrotron radiation source. The spatial resolution of the photoconductor was good enough to provide 75 microm FWHM using a 50 microm synchrotron x-ray beam. A substantial number of x-ray photons are absorbed effectively within the MBE CdTe layer as observed from the linear response up to 15 keV. These results demonstrate that MBE grown CdTe is a suitable choice of the detector materials to meet the requirements for x-ray detectors in particular for the new high brightness synchrotron sources

  10. Electrodeposition of CdTe thin film from acetate-based ionic liquid bath

    Science.gov (United States)

    Waldiya, Manmohansingh; Bhagat, Dharini; Mukhopadhyay, Indrajit

    2018-05-01

    CdTe being a direct band gap semiconductor, is mostly used in photovoltaics. Here we present, the synthesis of CdTe thin film on fluorine doped tin oxide (FTO) substrate potentiostatically using 1-butyl-3-methylimidazolium acetate ([Bmim][Ac]) ionic liquid (IL) bath at 90 °C. Major advantages of using electrodeposition involves process simplicity, large scalability & economic viability. Some of the benefits offered by IL electrolytic bath are low vapour pressure, wide electrochemical window, and good ionic mobility. Cd(CH3COO)2 (anhydrous) and TeO2 were used as the source precursors. The IL electrolytic bath temperature was kept at 90 °C for deposition, owing to the limited solubility of TeO2 in [Bmim][Ac] IL at room temperature. Cathodic electrodeposition was carried out using a three electrode cell setup at a constant potential of -1.20 V vs. platinum (Pt) wire. The CdTe/FTO thin film were annealed in argon (Ar) atmosphere. Optical study of nanostructured CdTe film were done using UV-Vis-IR and Raman spectroscopy. Raman analysis confirms the formation of CdTe having surface optics (SO) mode at 160.6 cm-1 and transverse optics (TO) mode at 140.5 cm-1. Elemental Te peaks at 123, 140.5 and 268 cm-1 were also observed. The optical band gap of Ar annealed CdTe thin film were found to be 1.47 eV (absorbance band edge ˜ 846 nm). The optimization of deposition parameters using acetate-based IL electrolytic bath to get nearly stoichiometric CdTe thin film is currently being explored.

  11. Numerical Analysis of Novel Back Surface Field for High Efficiency Ultrathin CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    M. A. Matin

    2013-01-01

    Full Text Available This paper numerically explores the possibility of high efficiency, ultrathin, and stable CdTe cells with different back surface field (BSF using well accepted simulator AMPS-1D (analysis of microelectronics and photonic structures. A modified structure of CdTe based PV cell SnO2/Zn2SnO4/CdS/CdTe/BSF/BC has been proposed over reference structure SnO2/Zn2SnO4/CdS/CdTe/Cu. Both higher bandgap materials like ZnTe and Cu2Te and low bandgap materials like As2Te3 and Sb2Te3 have been used as BSF to reduce minority carrier recombination loss at the back contact in ultra-thin CdTe cells. In this analysis the highest conversion efficiency of CdTe based PV cell without BSF has been found to be around 17% using CdTe absorber thickness of 5 μm. However, the proposed structures with different BSF have shown acceptable efficiencies with an ultra-thin CdTe absorber of only 0.6 μm. The proposed structure with As2Te3 BSF showed the highest conversion efficiency of 20.8% ( V,  mA/cm2, and . Moreover, the proposed structures have shown improved stability in most extents, as it was found that the cells have relatively lower negative temperature coefficient. However, the cell with ZnTe BSF has shown better overall stability than other proposed cells with temperature coefficient (TC of −0.3%/°C.

  12. Effect of shells on photoluminescence of aqueous CdTe quantum dots

    International Nuclear Information System (INIS)

    Yuan, Zhimin; Yang, Ping

    2013-01-01

    Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: • CdTe quantum dots were fabricated using an aqueous synthesis. • CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. • Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. • Inside CdS shells can reduce the strain on the QDs. • Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS core–shell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling

  13. Facile aqueous synthesis and growth mechanism of CdTe nanorods

    International Nuclear Information System (INIS)

    Gong Haibo; Hao Xiaopeng; Gao Chang; Wu Yongzhong; Du Jie; Xu Xiangang; Jiang Minhua

    2008-01-01

    Single-crystal CdTe nanorods with diameters of 50-100 nm were synthesized under a surfactant-assisted hydrothermal condition. The experimental results indicated that with a temporal dependence the morphologies of CdTe nanocrystallites changed from nanoparticles to smooth surface nanorods. The crystal structure, morphology and optical properties of the products were investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM) and fluorescence spectrophotometer. Furthermore, the formation mechanisms of the nanorods were investigated and discussed on the basis of the experimental results.

  14. Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

    International Nuclear Information System (INIS)

    Mayo, B.

    1998-01-01

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl2 treatment at 350C and completely recrystallized after the same treatment at 400C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl2 are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures

  15. Characterization of point defects in CdTe by positron annihilation spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Elsharkawy, M. R. M. [Carnegie Laboratory of Physics, SUPA, School of Science and Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Physics Department, Faculty of Science, Minia University, P.O. Box 61519, Minia (Egypt); Kanda, G. S.; Keeble, D. J., E-mail: d.j.keeble@dundee.ac.uk [Carnegie Laboratory of Physics, SUPA, School of Science and Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Abdel-Hady, E. E. [Physics Department, Faculty of Science, Minia University, P.O. Box 61519, Minia (Egypt)

    2016-06-13

    Positron lifetime measurements on CdTe 0.15% Zn-doped by weight are presented, trapping to monovacancy defects is observed. At low temperatures, localization at shallow binding energy positron traps dominates. To aid defect identification density functional theory, calculated positron lifetimes and momentum distributions are obtained using relaxed geometry configurations of the monovacancy defects and the Te antisite. These calculations provide evidence that combined positron lifetime and coincidence Doppler spectroscopy measurements have the capability to identify neutral or negative charge states of the monovacancies, the Te antisite, A-centers, and divacancy defects in CdTe.

  16. Design considerations for CdTe Nanotetrapods as electronic devices. krogstrup@fys.ku.dk.

    Science.gov (United States)

    Teich-McGoldrick, S L; Bellanger, M; Caussanel, M; Tsetseris, L; Pantelides, S T; Glotzer, S C; Schrimpf, R D

    2009-11-01

    We investigate the feasibility of using CdTe nanotetrapods as circuit elements using models and simulation at multiple scales. Technology computer-aided design tools are used to simulate the electrical behavior for both metal-semiconductor field-effect transistors and junction field-effect transistors. Our results show that by varying the doping concentrations and material composition, CdTe nanotetrapods have the potential to be useful circuit elements. Monte Carlo simulations provide insight into how control over interparticle and particle-substrate interactions can lead to the directed assembly of ordered arrays of electrically gated nanotetrapods.

  17. Formation of self assembled PbTe quantum dots in CdTe on Si(111)

    Science.gov (United States)

    Felder, F.; Fognini, A.; Rahim, M.; Fill, M.; Müller, E.; Zogg, H.

    2010-01-01

    We describe the growth and formation of self assembled PbTe quantum dots in a CdTe host on a silicon (111) substrate. Annealing yields different photoluminescence spectra depending on initial PbTe layer thickness, thickness of the CdTe cap layer and annealing temperature. Generally two distinct emission peaks at ˜0.3 eV and ˜0.45 eV are visible. Model calculations explaining their temperature dependence are performed. The dot size corresponds well with the estimated sizes from electron microscopy images. The quantum dots may be used as absorber within a mid-infrared detector.

  18. CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina [CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, 38054, Grenoble (France); Levy-Clement, Claude [CNRS, Institut de Chimie et des Materiaux de Paris-Est, 94320, Thiais (France)

    2014-09-15

    In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl{sub 2} to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl{sub 2} treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

    International Nuclear Information System (INIS)

    Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina; Levy-Clement, Claude

    2014-01-01

    In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl 2 to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl 2 treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Preparation of bioconjugates of CdTe nanocrystals for cancer marker detection

    International Nuclear Information System (INIS)

    Hu Fengqin; Ran Yuliang; Zhou Zhuan; Gao Mingyuan

    2006-01-01

    Highly fluorescent CdTe quantum dots (Q-dots) stabilized by 3-mercaptopropionic acid (MPA) were prepared by an aqueous solution approach and used as fluorescent labels in detecting a cancer marker, carcinoembryonic antigen (CEA), expressed on human colon carcinoma cell line LS 180. Nonspecific adsorptions of CdTe Q-dots on carcinoma cells were observed and effectively eliminated by replacing MPA with a thiolated PEG (poly(ethylene glycol), Mn = 750) synthesized according to literature. It was unexpectedly found out that the PEG-coated CdTe Q-dots exhibited very strong and specific affinity to anti-CEA monoclonal antibody rch 24 (rch 24 mAb). The resultant CdTe-(rch 24 mAb) conjugates were successfully used in detections of CEA expressed on the surface of cell line LS 180. Further experiments demonstrated that the fluorescent CdTe Q-dots exhibited much better photostability and a brighter fluorescence than FITC, which consequently led to a higher efficiency in the cancer marker detection

  1. First ever full size CdTE luminescent down-shifting module

    NARCIS (Netherlands)

    Ross, D.; Alonso-Alvarez, D.; Fritsche, J.; Bauer, M.; Debije, M.G.; Fifield, R.M.; Richards, B.S.

    2012-01-01

    For the first time a luminescent down-shifting (LDS) layer has been applied to a full size PV module to improve its short-wavelength response. An average 4.3% relative increase in the short-circuit current density (JSC) was recorded for the Calyxo cadmium telluride (CdTe) modules after the best LDS

  2. Hydrothermal synthesis of thiol-capped CdTe nanoparticles and their optical properties.

    Science.gov (United States)

    Bu, Hang-Beom; Kikunaga, Hayato; Shimura, Kunio; Takahasi, Kohji; Taniguchi, Taichi; Kim, DaeGwi

    2013-02-28

    Water soluble nanoparticles (NPs) with a high emission property were synthesized via hydrothermal routes. In this report, we chose thiol ligand N-acetyl-L-cysteine as the ideal stabilizer and have successfully employed it to synthesize readily size-controllable CdTe NPs in a reaction of only one step. Hydrothermal synthesis of CdTe NPs has been carried out in neutral or basic conditions so far. We found out that the pH value of precursor solutions plays an important role in the uniformity of the particle size. Actually, high quality CdTe NPs were synthesized under mild acidic conditions of pH 5. The resultant NPs indicated good visible light-emitting properties and stability. Further, the experimental results showed that the reaction temperature influenced significantly the growth rate and the maximum size of the NPs. The CdTe NPs with a high photoluminescence quantum yield (the highest value: 57%) and narrower half width at half maximum (the narrowest value: 33 nm) were attained in very short time, within 40 minutes, reaching diameters of 2.3 to 4.3 nm. The PL intensity was increased with an increase in the reaction time, reflecting the suppression of nonradiative recombination processes. Furthermore, the formation of CdTe/CdS core-shell structures was discussed from the viewpoint of PL dynamics and X-ray diffraction studies.

  3. CdTe quantum dots for an application in the life sciences

    International Nuclear Information System (INIS)

    Thuy, Ung Thi Dieu; Toan, Pham Song; Chi, Tran Thi Kim; Liem, Nguyen Quang; Khang, Dinh Duy

    2010-01-01

    This report highlights the results of the preparation of semiconductor CdTe quantum dots (QDs) in the aqueous phase. The small size of a few nm and a very high luminescence quantum yield exceeding 60% of these materials make them promisingly applicable to bio-medicine labeling. Their strong, two-photon excitation luminescence is also a good characteristic for biolabeling without interference with the cell fluorescence. The primary results for the pH-sensitive CdTe QDs are presented in that fluorescence of CdTe QDs was used as a proton sensor to detect proton flux driven by adenosine triphosphate (ATP) synthesis in chromatophores. In other words, these QDs could work as pH-sensitive detectors. Therefore, the system of CdTe QDs on chromatophores prepared from the cells of Rhodospirillum rubrum and the antibodies against the beta-subunit of F0F1–ATPase could be a sensitive detector for the avian influenza virus subtype A/H5N1

  4. Time resolution improvement of Schottky CdTe PET detectors using digital signal processing

    International Nuclear Information System (INIS)

    Nakhostin, M.; Ishii, K.; Kikuchi, Y.; Matsuyama, S.; Yamazaki, H.; Torshabi, A. Esmaili

    2009-01-01

    We present the results of our study on the timing performance of Schottky CdTe PET detectors using the technique of digital signal processing. The coincidence signals between a CdTe detector (15x15x1 mm 3 ) and a fast liquid scintillator detector were digitized by a fast digital oscilloscope and analyzed. In the analysis, digital versions of the elements of timing circuits, including pulse shaper and time discriminator, were created and a digital implementation of the Amplitude and Rise-time Compensation (ARC) mode of timing was performed. Owing to a very fine adjustment of the parameters of timing measurement, a good time resolution of less than 9.9 ns (FWHM) at an energy threshold of 150 keV was achieved. In the next step, a new method of time pickoff for improvement of timing resolution without loss in the detection efficiency of CdTe detectors was examined. In the method, signals from a CdTe detector are grouped by their rise-times and different procedures of time pickoff are applied to the signals of each group. Then, the time pickoffs are synchronized by compensating the fixed time offset, caused by the different time pickoff procedures. This method leads to an improved time resolution of ∼7.2 ns (FWHM) at an energy threshold of as low as 150 keV. The methods presented in this work are computationally fast enough to be used for online processing of data in an actual PET system.

  5. The role of substrate surface alteration in the fabrication of vertically aligned CdTe nanowires

    International Nuclear Information System (INIS)

    Neretina, S; Devenyi, G A; Preston, J S; Mascher, P; Hughes, R A; Sochinskii, N V

    2008-01-01

    Previously we have described the deposition of vertically aligned wurtzite CdTe nanowires derived from an unusual catalytically driven growth mode. This growth mode could only proceed when the surface of the substrate was corrupted with an alcohol layer, although the role of the corruption was not fully understood. Here, we present a study detailing the remarkable role that this substrate surface alteration plays in the development of CdTe nanowires; it dramatically improves the size uniformity and largely eliminates lateral growth. These effects are demonstrated to arise from the altered surface's ability to limit Ostwald ripening of the catalytic seed material and by providing a surface unable to promote the epitaxial relationship needed to sustain a lateral growth mode. The axial growth of the CdTe nanowires is found to be exclusively driven through the direct impingement of adatoms onto the catalytic seeds leading to a self-limiting wire height associated with the sublimation of material from the sidewall facets. The work presented furthers the development of the mechanisms needed to promote high quality substrate-based vertically aligned CdTe nanowires. With our present understanding of the growth mechanism being a combination of selective area epitaxy and a catalytically driven vapour-liquid-solid growth mode, these results also raise the intriguing possibility of employing this growth mode in other material systems in an effort to produce superior nanowires

  6. Novel Approach to Front Contact Passivation for CdTe Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Kephart, Jason

    2018-02-18

    The goal of this project was to study the use of sputter-deposited oxide materials for interface passivation of CdTe-based photovoltaics. Several candidate materials were chosen based on their promise in passivating the CdTe and CdSeTe semiconductor interface, chemical and thermal stability to device processing, and ability to be deposited by sputter deposition.

  7. Comparative study on toxicity of extracellularly biosynthesized and laboratory synthesized CdTe quantum dots

    Czech Academy of Sciences Publication Activity Database

    Komínková, M.; Milosavljevic, V.; Vítek, Petr; Polanská, H.; Číhalová, K.; Dostálová, S.; Hynstová, V.; Guran, R.; Kopel, P.; Richtera, L.; Masarik, M.; Brtnický, M.; Kynický, J.; Zítka, O.; Adam, V.

    2017-01-01

    Roč. 241, JAN (2017), s. 193-200 ISSN 0168-1656 R&D Projects: GA MŠk(CZ) LO1415 Institutional support: RVO:67179843 Keywords : Quantum dots * Biosynthesis * Escherichia coli (E. coli) * CdTe * Toxicity Subject RIV: EI - Biotechnology ; Bionics OBOR OECD: Environmental biotechnology Impact factor: 2.599, year: 2016

  8. Characterization of a pixelated CdTe Timepix detector operated in ToT mode

    International Nuclear Information System (INIS)

    Billoud, T.; Leroy, C.; Papadatos, C.; Roux, J.S.; Pichotka, M.; Pospisil, S.

    2017-01-01

    A 1 mm thick CdTe sensor bump-bonded to a Timepix readout chip operating in Time-over-Threshold (ToT) mode has been characterized in view of possible applications in particle and medical physics. The CdTe sensor layer was segmented into 256 × 256 pixels, with a pixel pitch of 55  μm. This CdTe Timepix device, of ohmic contact type, has been exposed to alpha-particles and photons from an 241 Am source, photons from a 137 Cs source, and protons of different energies (0.8–10 MeV) delivered by the University of Montreal Tandem Accelerator. The device was irradiated on the negatively biased backside electrode. An X-ray per-pixel calibration commonly used for this type of detector was done and its accuracy and resolution were assessed and compared to those of a 300  μm thick silicon Timepix device. The electron mobility-lifetime product (μ e τ e ) of CdTe for protons of low energy has been obtained from the Hecht equation. Possible polarization effects have been also investigated. Finally, information about the homogeneity of the detector was obtained from X-ray irradiation.

  9. Studies on interaction between CdTe quantum dots and α ...

    Indian Academy of Sciences (India)

    Administrator

    ence of CdTe QDs were also studied. α-Chy can maintain its high activity and stability under different. pH conditions ... creasing attention in the past decade. 1. Because of ... divided into 'poor' and 'good' substrate, depending on their kinetic ...

  10. Photoluminescence measurement of polycrystalline CdTe made of high purity source material

    Energy Technology Data Exchange (ETDEWEB)

    Hempel, Hannes; Kraft, Christian; Heisler, Christoph; Geburt, Sebastian; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, Friedrich Schiller Universitaet Jena, Helmholtzweg 3, 07743 Jena (Germany)

    2012-07-01

    CdTe is a common material for thin film solar cells. However, the mainly used CdTe source material is known to contain a high number of intrinsic defects and impurities. In this work we investigate the defect structure of high purity CdTe by means of Photoluminescence, which is a common method to detect the energy levels of defects in the band gap of semiconductors. We used a 633 nm HeNe-Laser at sample temperatures of 8 K. The examined samples were processed in a new vacuum system based on the PVD method. They yield significantly different spectra on as-grown samples compared to those measured on samples which are grown by the standard process, since the double peak at 1.55 eV was hardly detectable and the A-center correlated transition vanished. Instead a peak at 1.50 eV with pronounced phonon coupling was observed. The 1.50 eV peak is known from other measurements but has not been characterized so far. The intention of this work is to characterize this new feature and the influence of post deposition treatments of the CdTe layers on the PL spectra.

  11. Quantitative analysis of polarization phenomena in CdTe radiation detectors

    International Nuclear Information System (INIS)

    Toyama, Hiroyuki; Higa, Akira; Yamazato, Masaaki; Maehama, Takehiro; Toguchi, Minoru; Ohno, Ryoichi

    2006-01-01

    Polarization phenomena in a Schottky-type CdTe radiation detector were studied. We evaluated the distribution of electric field in a biased CdTe detector by measuring the progressive change of Schottky barrier lowering with time. The parameters of deep acceptors such as detrapping time, concentration, and the depth of the energy level were quantitatively evaluated. In the case of applying the conventional model of charge accumulation, the obtained result shows that the CdTe bulk is never undepleted. We modified the charge accumulation model by taking account of the occupation state of the deep acceptor level. When a modified model is applied, the time that the depletion width in the bulk begins to diminish closely fits the time that the photopeak position begins to shift in radiation measurements. In this paper, we present a distribution of electric field during biasing and a simple method for the evaluation of the parameters of deep acceptors in CdTe bulk. (author)

  12. Vapor transport deposition of large-area polycrystalline CdTe for radiation image sensor application

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Keedong; Cha, Bokyung; Heo, Duchang; Jeon, Sungchae [Korea Electrotechnology Research Institute, 111 Hanggaul-ro, Ansan-si, Gyeonggi-do 426-170 (Korea, Republic of)

    2014-07-15

    Vapor transport deposition (VTD) process delivers saturated vapor to substrate, resulting in high-throughput and scalable process. In addition, VTD can maintain lower substrate temperature than close-spaced sublimation (CSS). The motivation of this work is to adopt several advantages of VTD for radiation image sensor application. Polycrystalline CdTe films were obtained on 300 mm x 300 mm indium tin oxide (ITO) coated glass. The polycrystalline CdTe film has columnar structure with average grain size of 3 μm ∝ 9 μm, which can be controlled by changing the substrate temperature. In order to analyze electrical and X-ray characteristics, ITO-CdTe-Al sandwich structured device was fabricated. Effective resistivity of the polycrystalline CdTe film was ∝1.4 x 10{sup 9}Ωcm. The device was operated under hole-collection mode. The responsivity and the μτ product estimated to be 6.8 μC/cm{sup 2}R and 5.5 x 10{sup -7} cm{sup 2}/V. The VTD can be a process of choice for monolithic integration of CdTe thick film for radiation image sensor and CMOS/TFT circuitry. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Excitons in tunnel coupled CdTe and (Cd,Mn)Te quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Terletskii, Oleg; Ryabchenko, Sergiy; Tereshchenko, Oleksandr [Institute of Physics NASU, pr. Nauki 46, 03680 Kyiv (Ukraine); Sugakov, Volodymyr; Vertsimakha, Ganna [Institute for Nuclear Research NASU, pr. Nauki 47, 03680 Kyiv (Ukraine); Karczewski, Grzegorz [Institute of Physics PAS, Al. Lotnikow 32/46, PL-02-668 Warsaw (Poland)

    2017-05-15

    The photoluminescence (PL) from structures containing Cd{sub 0.95}Mn{sub 0.05}Te and CdTe quantum wells (QWs) separated by a narrow (1.94 nm) barrier was studied. The PL lines of comparable intensities from several possible exciton states were observed simultaneously at energy distances substantially exceeding kT. This means that the energy transfer in the studied systems is slower than the radiative recombination of the confined excitons. For the CdTe QW width of about 8.7-9 nm, indirect excitons with the electron and heavy hole chiefly localized in the CdTe and Cd{sub 1-x}Mn{sub x}Te QWs, respectively, were detected in the magnetic field. These indirect excitons have PL energy of about 10-20 meV above the PL line of the direct excitons in the CdTe QW. The observation of the PL from the indirect excitons which are not the lowest excitations in the structure is a distinctive feature of the system. Photoluminescence intensity dependence on the energy and the magnetic field. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Thin film CdTe solar cells by close spaced sublimation: Recent results from pilot line

    International Nuclear Information System (INIS)

    Siepchen, B.; Drost, C.; Späth, B.; Krishnakumar, V.; Richter, H.; Harr, M.; Bossert, S.; Grimm, M.; Häfner, K.; Modes, T.; Zywitzki, O.; Morgner, H.

    2013-01-01

    CdTe is an attractive material to produce high efficient and low cost thin film solar cells. The semiconducting layers of this kind of solar cell can be deposited by the Close Spaced Sublimation (CSS) process. The advantages of this technique are high deposition rates and an excellent utilization of the raw material, leading to low production costs and competitive module prices. CTF Solar GmbH is offering equipment and process knowhow for the production of CdTe solar modules. For further improvement of the technology, research is done at a pilot line, which covers all relevant process steps for manufacture of CdTe solar cells. Herein, we present the latest results from the process development and our research activities on single functional layers as well as for complete solar cell devices. Efficiencies above 13% have already been obtained with Cu-free back contacts. An additional focus is set on different transparent conducting oxide materials for the front contact and a Sb 2 Te 3 based back contact. - Highlights: ► Laboratory established on industrial level for CdTe solar cell research ► 13.0% cell efficiency with our standard front contact and Cu-free back contact ► Research on ZnO-based transparent conducting oxide and Sb 2 Te 3 back contacts ► High resolution scanning electron microscopy analysis of ion polished cross section

  15. Quantitative analysis of impurities present in the trace state in CdTe

    International Nuclear Information System (INIS)

    Al-Neami, A.

    1988-01-01

    Impurities in CdTe have been analyzed by PIXE using 3 MeV protons and by 1 MeV Ar ion induced X-ray emission. In the case of PIXE elements with Z > 25 are detected whereas with Ar ions only elements with 13 [fr

  16. Growth and analysis of micro and nano CdTe arrays for solar cell applications

    Science.gov (United States)

    Aguirre, Brandon Adrian

    CdTe is an excellent material for infrared detectors and photovoltaic applications. The efficiency of CdTe/CdS solar cells has increased very rapidly in the last 3 years to ˜20% but is still below the maximum theoretical value of 30%. Although the short-circuit current density is close to its maximum of 30 mA/cm2, the open circuit voltage has potential to be increased further to over 1 Volt. The main limitation that prevents further increase in the open-circuit voltage and therefore efficiency is the high defect density in the CdTe absorber layer. Reducing the defect density will increase the open-circuit voltage above 1 V through an increase in the carrier lifetime and concentration to tau >10 ns and p > 10 16 cm-3, respectively. However, the large lattice mismatch (10%) between CdTe and CdS and the polycrystalline nature of the CdTe film are the fundamental reasons for the high defect density and pose a difficult challenge to solve. In this work, a method to physically and electrically isolate the different kinds of defects at the nanoscale and understand their effect on the electrical performance of CdTe is presented. A SiO2 template with arrays of window openings was deposited between the CdTe and CdS to achieve selective-area growth of the CdTe via close-space sublimation. The diameter of the window openings was varied from the micro to the nanoscale to study the effect of size on nucleation, grain growth, and defect density. The resulting structures enabled the possibility to electrically isolate and individually probe micrometer and nanoscale sized CdTe/CdS cells. Electron back-scattered diffraction was used to observe grain orientation and defects in the miniature cells. Scanning and transmission electron microscopy was used to study the morphology, grain boundaries, grain orientation, defect structure, and strain in the layers. Finally, conducting atomic force microscopy was used to study the current-voltage characteristics of the solar cells. An

  17. Emissions and encapsulation of cadmium in CdTe PV modules during fires

    Energy Technology Data Exchange (ETDEWEB)

    Fthenakis, V.M.; Fuhrmann, M.; Heiser, J.; Fitts, J.; Wang, W. [Brookhaven National Laboratory, Upton, NY (United States). Environmental Sciences Dept.; Lanzirotti, A. [University of Chicago, Chicago, IL (United States). Consortium for Advanced Radiation Resources

    2005-12-15

    Fires in residential and commercial properties are not uncommon. If such fires involve the roof, photovoltaic arrays mounted on the roof will be exposed to the flames. The amount of cadmium that can be released in fires involving CdTe PV and the magnitude of associated health risks has been debated. The current study aims in delineating this issue. Previous thermogravimetric studies of CdTe, involved pure CdTe and single-glass PV modules. The current study is based on glass-glass CdTe PV modules which are the only ones in the market. Pieces of commercial CdTe photovoltaic (PV) modules, sizes 25x3 cm, were heated to temperatures up to 1100{sup o}C to simulate exposure to residential and commercial building fires. The temperature rate and duration in these experiments were defined according to standard protocols. Four different types of analysis were performed to investigate emissions and redistribution of elements in the matrix of heated CdTe PV modules: (1) measurements of sample weight loss as a function of temperature; (2) analyses of Cd and Te in the gaseous emissions; (3) Cd distribution in the heated glass using synchrotron X-ray fluorescence microprobe analysis; and (4) chemical analysis for Cd and Te in the acid-digested glass. These experiments showed that almost all (i.e., 99.5%) of the cadmium content of CdTe PV modules was encapsulated in the molten glass matrix; a small amount of Cd escaped from the perimeter of the samples before the two sheets of glass melted together. Adjusting for this loss in full-size modules, results in 99.96% retention of Cd. Multiplying this with the probability of occurrence for residential fires in wood-frame houses in the US (e.g., 10{sup -4}), results in emissions of 0.06 mg/GWh; the probability of sustained fires and subsequent emissions in adequately designed and maintained utility systems appears to be zero. (Author)

  18. Growth of CdTe on Si(100) surface by ionized cluster beam technique: Experimental and molecular dynamics simulation

    Energy Technology Data Exchange (ETDEWEB)

    Araghi, Houshang, E-mail: araghi@aut.ac.ir [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Zabihi, Zabiholah [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Nayebi, Payman [Department of Physics, College of Technical and Engineering, Saveh Branch, Islamic Azad University, Saveh (Iran, Islamic Republic of); Ehsani, Mohammad Mahdi [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of)

    2016-10-15

    II–VI semiconductor CdTe was grown on the Si(100) substrate surface by the ionized cluster beam (ICB) technique. In the ICB method, when vapors of solid materials such as CdTe were ejected through a nozzle of a heated crucible into a vacuum region, nanoclusters were created by an adiabatic expansion phenomenon. The clusters thus obtained were partially ionized by electron bombardment and then accelerated onto the silicon substrate at 473 K by high potentials. The cluster size was determined using a retarding field energy analyzer. The results of X-ray diffraction measurements indicate the cubic zinc blende (ZB) crystalline structure of the CdTe thin film on the silicon substrate. The CdTe thin film prepared by the ICB method had high crystalline quality. The microscopic processes involved in the ICB deposition technique, such as impact and coalescence processes, have been studied in detail by molecular dynamics (MD) simulation.

  19. Mechanism of charge transport in ligand-capped crystalline CdTe nanoparticles according to surface photovoltaic and photoacoustic results

    Energy Technology Data Exchange (ETDEWEB)

    Li Kuiying, E-mail: kuiyingli@ysu.edu.cn [National Laboratory of Metastable Materials Manufacture Technology and Science, Yanshan University, Hebei Str. 438, Qinhuangdao, Hebei Province 066004 (China); Zhang Hao [Key Laboratory for Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012 (China); Yang Weiyong; Wei Sailing [National Laboratory of Metastable Materials Manufacture Technology and Science, Yanshan University, Hebei Str. 438, Qinhuangdao, Hebei Province 066004 (China); Wang Dayang, E-mail: dayang@mpikg-golm.mpg.de [Max Planck Institute of Colloids and Interfaces, Potsdam 14424 (Germany)

    2010-09-01

    By combining surface photovoltaic and photoacoustic techniques, we probed the photogenerated charge transport channels of 3-mercaptopropionic acid (MPA)- and 2-mercaptoethylamine (MA)-capped crystalline CdTe nanoparticles on illumination with UV-near IR light. The results experimentally confirmed the presence of a CdS shell outside the CdTe core that formed through the self-assembly and decomposition of mercapto ligands during CdTe preparation. The data revealed that the CdS layer was partly responsible for the deexcitation behavior of the photogenerated carriers, which is related to the quantum tunnel effect. Experiments demonstrated that two quantum wells were located at wavelengths of 440 and 500 nm in buried interfacial space-charge regions, whereas the formation of a ligand layer obstructed charge transfer transitions of the core CdTe nanoparticles to a certain extent.

  20. A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Liu Yan [Jilin Province Research Center for Engineering and Technology of Spectral Analytical Instruments, Jilin University, Changchun 130023 (China); Shen Qihui; Shi Weiguang; Li Jixue; Liu Xiaoyang [State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012 (China); Yu Dongdong [1st Hopstail affiliated to Jilin University, Jilin University, Changchun 130023 (China); Zhou Jianguang [Research Center for Analytical Instrumentation, Zhejiang University, Hangzhou 310058 (China)], E-mail: liuxy@jlu.edu.cn, E-mail: jgzhou70@126.com

    2008-06-18

    One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

  1. A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

    International Nuclear Information System (INIS)

    Liu Yan; Shen Qihui; Shi Weiguang; Li Jixue; Liu Xiaoyang; Yu Dongdong; Zhou Jianguang

    2008-01-01

    One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals

  2. Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

    International Nuclear Information System (INIS)

    Ananthakumar, S.; Jayabalan, J.; Singh, Asha; Khan, Salahuddin; Babu, S. Moorthy; Chari, Rama

    2016-01-01

    The photoluminescence (PL) from semiconductor quantum dots can show a “PL bright point”, that is the PL from as prepared quantum dots is maximum at a particular size. In this work we show that, for CdTe quantum dots, upconversion photoluminescence (UCPL) originating from nonlinear absorption shows a similar “UCPL bright point”. The PL and UCPL bright points occur at nearly the same size. The existence of a UCPL bright point has important implications for upconversion microscopy applications. - Highlights: • The size dependence of the upconversion photoluminescence (UCPL) spectrum of CdTe quantum dots has been reported. • We show that the UCPL from the CdTe quantum dots is highest at a particular size. • Thus the occurrence of a "UCPL bright point" in CdTe quantum dots has been demonstrated. • It has been shown that the UCPL bright point occurs at nearly the same size as a normal bright point.

  3. Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

    Science.gov (United States)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2016-09-01

    Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

  4. Enhanced glutathione content allows the in vivo synthesis of fluorescent CdTe nanoparticles by Escherichia coli.

    Directory of Open Access Journals (Sweden)

    Juan P Monrás

    Full Text Available The vast application of fluorescent semiconductor nanoparticles (NPs or quantum dots (QDs has prompted the development of new, cheap and safer methods that allow generating QDs with improved biocompatibility. In this context, green or biological QDs production represents a still unexplored area. This work reports the intracellular CdTe QDs biosynthesis in bacteria. Escherichia coli overexpressing the gshA gene, involved in glutathione (GSH biosynthesis, was used to produce CdTe QDs. Cells exhibited higher reduced thiols, GSH and Cd/Te contents that allow generating fluorescent intracellular NP-like structures when exposed to CdCl(2 and K(2TeO(3. Fluorescence microscopy revealed that QDs-producing cells accumulate defined structures of various colors, suggesting the production of differently-sized NPs. Purified fluorescent NPs exhibited structural and spectroscopic properties characteristic of CdTe QDs, as size and absorption/emission spectra. Elemental analysis confirmed that biosynthesized QDs were formed by Cd and Te with Cd/Te ratios expected for CdTe QDs. Finally, fluorescent properties of QDs-producing cells, such as color and intensity, were improved by temperature control and the use of reducing buffers.

  5. Matrix-Assisted Laser Desorption Ionization Mass Spectrometry of Compounds Containing Carboxyl Groups Using CdTe and CuO Nanoparticles

    OpenAIRE

    Megumi Sakurai; Taro Sato; Jiawei Xu; Soichi Sato; Tatsuya Fujino

    2018-01-01

    Matrix-assisted laser desorption ionization mass spectrometry of compounds containing carboxyl groups was carried out by using semiconductor nanoparticles (CdTe and CuO) as the matrix. Salicylic acid (Sal), glucuronic acid (Glu), ibuprofen (Ibu), and tyrosine (Tyr) were ionized as deprotonated species (carboxylate anions) by using electrons ejected from CdTe after the photoexcitation. When CuO was used as the matrix, the peak intensity of Tyr became high compared with that obtained with CdTe....

  6. Novel Contact Materials for Improved Performance CdTe Solar Cells Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Rockett, Angus [Colorado School of Mines, Golden, CO (United States); Marsillac, Sylvain [Old Dominion Univ., Norfolk, VA (United States); Collins, Robert [Univesity of Toledo

    2018-04-15

    This program has explored a number of novel materials for contacts to CdTe solar cells in order to reduce the back contact Schottky barrier to zero and produce an ohmic contact. The project tested a wide range of potential contact materials including TiN, ZrN, CuInSe2:N, a-Si:H and alloys with C, and FeS2. Improved contacts were achieved with FeS2. As part of understanding the operation of the devices and controlling the deposition processes, a number of other important results were obtained. In the process of this project and following its conclusion it led to research that resulted in seven journal articles, nine conference publications, 13 talks presented at conferences, and training of eight graduate students. The seven journal articles were published in 2015, 2016, and 2017 and have been cited, as of March 2018, 52 times (one cited 19 times and two cited 11 times). We demonstrated high levels of doping of CIS with N but electrical activity of the resulting N was not high and the results were difficult to reproduce. Furthermore, even with high doping the contacts were not good. Annealing did not improve the contacts. A-Si:H was found to produce acceptable but unstable contacts, degrading even over a day or two, apparently due to H incorporation into the CdTe. Alloying with C did not improve the contacts or stability. The transition metal nitrides produced Schottky type contacts for all materials tested. While these contacts were found to be unsatisfactory, we investigated FeS2 and found this material to be effective and comparable to the best contacts currently available. The contacts were found to be chemically stable under heat treatment and preferable to Cu doped contacts. Thus, we demonstrated an improved contact material in the course of this project. In addition, we developed new ways of controlling the deposition of CdTe and other materials, demonstrated the nature of defects in CdTe, and studied the distribution of conductivity and carrier type in CdTe

  7. CdTe quantum dots with daunorubicin induce apoptosis of multidrug-resistant human hepatoma HepG2/ADM cells: in vitro and in vivo evaluation

    Directory of Open Access Journals (Sweden)

    Shi Lixin

    2011-01-01

    Full Text Available Abstract Cadmium telluride quantum dots (Cdte QDs have received significant attention in biomedical research because of their potential in disease diagnosis and drug delivery. In this study, we have investigated the interaction mechanism and synergistic effect of 3-mercaptopropionic acid-capped Cdte QDs with the anti-cancer drug daunorubicin (DNR on the induction of apoptosis using drug-resistant human hepatoma HepG2/ADM cells. Electrochemical assay revealed that Cdte QDs readily facilitated the uptake of the DNR into HepG2/ADM cells. Apoptotic staining, DNA fragmentation, and flow cytometry analysis further demonstrated that compared with Cdte QDs or DNR treatment alone, the apoptosis rate increased after the treatment of Cdte QDs together with DNR in HepG2/ADM cells. We observed that Cdte QDs treatment could reduce the effect of P-glycoprotein while the treatment of Cdte QDs together with DNR can clearly activate apoptosis-related caspases protein expression in HepG2/ADM cells. Moreover, our in vivo study indicated that the treatment of Cdte QDs together with DNR effectively inhibited the human hepatoma HepG2/ADM nude mice tumor growth. The increased cell apoptosis rate was closely correlated with the enhanced inhibition of tumor growth in the studied animals. Thus, Cdte QDs combined with DNR may serve as a possible alternative for targeted therapeutic approaches for some cancer treatments.

  8. High performance p-i-n CdTe and CdZnTe detectors

    CERN Document Server

    Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

    1999-01-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  9. Synthesis and transport characterization of electrochemically deposited CdTe nanowires

    Science.gov (United States)

    Kaur, Jaskiran; Kaur, Harmanmeet; Singh, R. C.

    2018-04-01

    This paper reports the synthesis and characterization of CdTe nanowires. A thin polymeric films were irradiated with 80MeV Ag ions at a fluence of 8E7 ions/cm2, followed by UV irradiation and chemically etching in aqueous NaOH. Nanosizes go-through pores so formed were filled using a specially designed cell via electrodeposition. Nanowires so formed were further studied using SEM, I-V, UV and XRD analysis. SEM images show very smooth and uniform CdTe nanowires freely standing on the substrate. The in-situ I-V characteristics of nano-/micro structures was carried out at room temperature by leaving the structures embedded in the insulating template membrane itself.

  10. Pressure-induced drastic structural change in liquid CdTe

    International Nuclear Information System (INIS)

    Kinoshita, T.; Hattori, T.; Narushima, T.; Tsuji, K.

    2005-01-01

    We investigate the structure of liquid CdTe at pressures up to 6 GPa by synchrotron x-ray diffraction. The structure factor, S(Q), and the pair distribution function, g(r), change drastically within a small pressure interval of about 1 GPa (between 1.8 and 3 GPa). The S(Q),g(r), and other structural parameters, such as the average coordination number, CN, and the ratios of peak positions in S(Q) or g(r), reveal that the change originates from the pressure-induced modification in the local structure from the zinc-blende-like form into the rocksaltlike one. The liquid CdTe shows a high-pressure behavior similar to that in the crystalline counterpart in terms of the sharpness of the structural change and the high-pressure sequence in the local structure

  11. Understanding arsenic incorporation in CdTe with atom probe tomography

    Energy Technology Data Exchange (ETDEWEB)

    Burton, G. L.; Diercks, D. R.; Ogedengbe, O. S.; Jayathilaka, P. A. R. D.; Edirisooriya, M.; Myers, T. H.; Zaunbrecher, K. N.; Moseley, J.; Barnes, T. M.; Gorman, B. P.

    2018-08-01

    Overcoming the open circuit voltage deficiency in Cadmium Telluride (CdTe) photovoltaics may be achieved by increasing p-type doping while maintaining or increasing minority carrier lifetimes. Here, routes to higher doping efficiency using arsenic are explored through an atomic scale understanding of dopant incorporation limits and activation in molecular beam epitaxy grown CdTe layers. Atom probe tomography reveals spatial segregation into nanometer scale clusters containing > 60 at% As for samples with arsenic incorporation levels greater than 7-8 x 10^17 cm-3. The presence of arsenic clusters was accompanied by crystal quality degradation, particularly the introduction of arsenic-enriched extended defects. Post-growth annealing treatments are shown to increase the size of the As precipitates and the amount of As within the precipitates.

  12. Improvement of radiation response characteristic on CdTe detectors using fast neutron irradiation

    International Nuclear Information System (INIS)

    Miyamaru, Hiroyuki; Takahashi, Akito; Iida, Toshiyuki

    1999-01-01

    The treatment of fast neutron pre-irradiation was applied to a CdTe radiation detector in order to improve radiation response characteristic. Electron transport property of the detector was changed by the irradiation effect to suppress pulse amplitude fluctuation in risetime. Spectroscopic performance of the pre-irradiated detector was compared with the original. Additionally, the pre-irradiated detector was employed with a detection system using electrical signal processing of risetime discrimination (RTD). Pulse height spectra of 241 Am, 133 Ba, and 137 Cs gamma rays were measured to examine the change of the detector performance. The experimental results indicated that response characteristic for high-energy photons was improved by the pre-irradiation. The combination of the pre-irradiated detector and the RTD processing was found to provide further enhancement of the energy resolution. Application of fast neutron irradiation effect to the CdTe detector was demonstrated. (author)

  13. CdTe in photoconductive applications. Fast detector for metrology and X-ray imaging

    International Nuclear Information System (INIS)

    Cuzin, M.

    1991-01-01

    Operating as a photoconductor, the sensitivity and the impulse response of semi-insulating materials greatly depend on the excitation duration compared to electron and hole lifetimes. The requirement of ohmic contact is shortly discussed. Before developing picosecond measurements with integrated autocorrelation system, this paper explains high energy industrial tomographic application with large CdTe detectors (25x15x0.9 mm 3 ). The excitation is typically μs range. X-ray flash radiography, with 10 ns burst, is in an intermediate time domain where excitation is similar to electron life-time. In laser fusion experiment excitation is in the range of 50 ps and we develop photoconductive devices able to study very high speed X-ray emission time behaviour. Thin polycristalline MOCVD CdTe films with picosecond response are suitable to perform optical correlation measurements of single shot pulses with a very large bandwidth (- 50 GHz)

  14. Unusual strain in homoepitaxial CdTe(001) layers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Heinke, H.; Waag, A.; Moeller, M.O.; Regnet, M.M.; Landwehr, G. [Physikalisches Institut, Univ. Wuerzburg (Germany)

    1994-01-01

    For homoepitaxial CdTe(001) films grown by molecular beam epitaxy onto CdTe(001) substrates, a difference between the lattice constants of the substrate and the layer was systematically observed using high resolution X-ray diffraction. Reciprocal space maps point out an unusual strain state of such layers which is indicated by the position of their reciprocal lattice points. They lie in a section of reciprocal space which is usually forbidden by elasticity theory. The strain is laterally anisotropic leading to a monoclinic symmetry of the thin films. The lateral strain is depth dependent. Possible reasons for the formation of the unusual strain are discussed, and a correlation of the unusual strain with the growth conditions is attempted

  15. Photovoltaic properties of in-doped CDTE thin films deposited on metallic substrates

    International Nuclear Information System (INIS)

    Wagah F Mohamad; Khalid K Mohammed

    2006-01-01

    CDTE is a promising photovoltaic material due to its nearly optimum band gap and high optical absorption coefficient. This study looks into the effect of indium doping of the CdTe thin film deposited on stainless steel substrate. The conventional cells are usually manufactured on glass substrate and offer no weight advantage over single crystal cells. Since the metal foil support can be as thin as (40-60) μm and the weight saving is significant. The spectral response of the photo current with and without indium doping was studied in detail and compared with theory. The sub gap response of the resulted structure is particularly strong and extends to wavelengths up to 1000 nm

  16. CdTe and Cd1-xZnxTe for nuclear detectors: facts and fictions

    International Nuclear Information System (INIS)

    Fougeres, P.; Siffert, P.; Hageali, M.; Koebel, J.M.; Regal, R.

    1999-01-01

    Both CdTe and Cd 1-x Zn x Te (CZT) can be considered from their physical properties as very good materials for room temperature X- and γ-rays detection. However, despite years of intense material research, no significant advance has been made to help one to choose between both semiconductors. This paper reviews a few facts about CdTe and CZT to attempt to draw a real comparison between both. THM-CdTe and HPB-CZT have been grown and characterized in Strasbourg. Crystal growth, alloying effects, transport properties and defects are reviewed on the basis of our results and the published ones. The results show that it is still very difficult to claim which one is the best

  17. In situ observation of morphological change in CdTe nano- and submicron wires

    Energy Technology Data Exchange (ETDEWEB)

    Davami, Keivan; Lee, Jeong-Soo; Meyyappan, M [Division of IT Convergence Engineering, Pohang University of Science and Technology, Pohang (Korea, Republic of); Ghassemi, Hessam M; Yassar, Reza S [Department of Mechanical Engineering, Michigan Technological University, Houghton, MI 49931 (United States); Sun, Xuhui, E-mail: ljs6951@postech.ac.kr, E-mail: m.meyyappan@nasa.gov [Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

    2011-10-28

    We report growth and characterization of CdTe wires 30-400 nm in diameter by the vapor-liquid-solid technique. Individual nanowires were placed on a movable piezotube, which allowed three-dimensional motion toward a scanning tunneling microscope (STM). A bias was applied to the STM tip in contact with the nanowire, and the morphological changes due to Joule heating were observed in situ using a transmission electron microscope (TEM) in real time. For thick CdTe wires (d > {approx} 150 nm), the process results in the growth of superfine nanowires (SFNWs) of 2-4 nm diameter on the surface of the wire. Smaller diameter nanowires, in contrast, disintegrate under the applied bias before the complete evolution of SFNWs on the surface.

  18. Improvement of the sensitivity of CdTe detectors in the high energy regions

    Energy Technology Data Exchange (ETDEWEB)

    Nishizawa, Hiroshi; Ikegami, Kazunori; Takashima, Kazuo; Usami, Teruo [Mitsubishi Electric Corp., Tokyo (Japan); Yamamoto, Takayoshi

    1996-07-01

    In order to improve the efficiency of the full energy peak in the high energy regions, we had previously suggested a multi-layered structure of CdTe elements and have since confirmed the sensitivity improvement of the full energy peak. And furthermore, we have suggested a new type structure of multi-layered elements in this paper and we confirmed that the efficiency of the full energy peak became higher and that more proper energy spectra were obtained by our current experiment than by the detector with the conventional structure. This paper describes a simulation and experiment to improve the efficiency of the full energy peak and to obtain the more proper energy spectra of {sup 137}Cs (662keV) and {sup 60}Co (1.17 and 1.33MeV) using the new structure of CdTe detector. (J.P.N.)

  19. Local polarization phenomena in In-doped CdTe x-ray detector arrays

    International Nuclear Information System (INIS)

    Sato, Toshiyuki; Sato, Kenji; Ishida, Shinichiro; Kiri, Motosada; Hirooka, Megumi; Yamada, Masayoshi; Kanamori, Hitoshi

    1995-01-01

    Local polarization phenomena have been studied in detector arrays with the detector element size of 500 microm x 500 microm, which are fabricated from high-resistivity In-doped CdTe crystals grown by the vertical Bridgman technique. It has been found for the first time that a polarization effect, which is characterized by a progressive decrease of the pulse counting rate with increasing photon fluence, strongly depends on the detector elements, that is, the portion of crystals used. The influence of several parameters, such as the applied electric field strength, time, and temperature, on this local polarization effect is also investigated. From the photoluminescence measurements of the inhomogeneity of In dopant, it is concluded that the local polarization effect observed here originates from a deep level associated with In dopant in CdTe crystals

  20. Study of polarization phenomena in Schottky CdTe diodes using infrared light illumination

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Goro, E-mail: gsato@astro.isas.jaxa.jp [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Fukuyama, Taro [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-0033 (Japan); Watanabe, Shin; Ikeda, Hirokazu; Ohta, Masayuki; Ishikawa, Shin' nosuke [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Takahashi, Tadayuki [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-0033 (Japan); Shiraki, Hiroyuki; Ohno, Ryoichi [ACRORAD Co., Ltd., 13-23 Suzaki, Uruma, Okinawa 904-2234 (Japan)

    2011-10-01

    Schottky CdTe diode detectors suffer from a polarization phenomenon, which is characterized by degradation of the spectral properties over time following exposure to high bias voltage. This is considered attributable to charge accumulation at deep acceptor levels. A Schottky CdTe diode was illuminated with an infrared light for a certain period during a bias operation, and two opposite behaviors emerged. The detector showed a recovery when illuminated after the bias-induced polarization had completely progressed. Conversely, when the detector was illuminated before the emergence of bias-induced polarization, the degradation of the spectral properties was accelerated. Interpretation of these effects and discussion on the energy level of deep acceptors are presented.

  1. Growth and optical properties of CdTe quantum dots in ZnTe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wojnar, Piotr; Janik, Elzbieta; Baczewski, Lech T.; Kret, Slawomir; Karczewski, G.; Wojtowicz, Tomasz [Institute of Physics, Polish Academy of Sciences, Al Lotnikow 32/46, 02-668 Warsaw (Poland); Goryca, Mateusz; Kazimierczuk, Tomasz; Kossacki, Piotr [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland)

    2011-09-12

    We report on the formation of optically active CdTe quantum dots in ZnTe nanowires. The CdTe/ZnTe nanostructures have been grown by a gold nanocatalyst assisted molecular beam epitaxy in a vapor-liquid solid growth process. The presence of CdTe insertions in ZnTe nanowire results in the appearance of a strong photoluminescence band in the 2.0 eV-2.25 eV energy range. Spatially resolved photoluminescence measurements reveal that this broad emission consists of several sharp lines with the spectral width of about 2 meV. The large degree of linear polarization of these individual emission lines confirms their nanowire origin, whereas the zero-dimensional confinement is proved by photon correlation spectroscopy.

  2. Photoinduced interaction between MPA capped CdTe QDs and certain anthraquinone dyes

    Energy Technology Data Exchange (ETDEWEB)

    Jagadeeswari, S.; Asha Jhonsi, M.; Kathiravan, A. [School of Chemistry, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India); Renganathan, R., E-mail: rrengas@gmail.co [School of Chemistry, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India)

    2011-04-15

    Photoinduced interaction of mercapto propionic acid (MPA) capped CdTe quantum dots (QDs) with certain anthraquinone dyes namely alizarin, alizarin red S, acid blue 129 and uniblue has been studied by steady state and time resolved fluorescence measurements. Addition of anthraquinone dyes to CdTe QDs results in the reduction of electron hole recombination has been observed (i.e., fluorescence quenching). The Stern-Volmer constant (K{sub SV}), quenching rate constant (k{sub q}) and association constants (K) were obtained from fluorescence quenching data. The interaction of anthraquinone dyes with QDs occurs through static quenching was confirmed by unaltered fluorescence lifetime. The occurrence of electron transfer quenching mechanism has been proved by the negative free energy change ({Delta}G{sub et}) obtained as per the Rehm-Weller equation.

  3. Optical Properties of Al- and Sb-Doped CdTe Thin Films

    Directory of Open Access Journals (Sweden)

    A. A. J. Al-Douri

    2010-01-01

    Full Text Available Nondoped and (Al, Sb-doped CdTe thin films with 0.5, 1.5, and 2.5  wt.%, respectively, were deposited by thermal evaporation technique under vacuum onto Corning 7059 glass at substrate temperatures ( of room temperature (RT and 423 K. The optical properties of deposited CdTe films such as band gap, refractive index (n, extinction coefficient (, and dielectric coefficients were investigated as function of Al and Sb wt.% doping, respectively. The results showed that films have direct optical transition. Increasing and the wt.% of both types of dopant, the band gap decrease but the optical is constant as n, and real and imaginary parts of the dielectric coefficient increase.

  4. Fabrication of fluorescent composite with ultrafast aqueous synthesized high luminescent CdTe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Lei, E-mail: mejswu@ust.hk; Chen, Haibin, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk; Wu, Jingshen, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk [Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Hong Kong and Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong); Bi, Xianghong, E-mail: takubatch@gmail.com [Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong)

    2014-05-15

    Without precursor preparation, inert gas protection and enormous amount of additives and reductants, CdTe quantum dots (QDs) can be rapidly synthesized with high quality. A 600 nm photoluminescence peak wavelength could be obtained within 1 hour's refluxing through minimal addition of 1,2-diaminoethane (DAE). The theoretical design for the experiments are illustrated and further proved by the characterization results with different concentrations and reagents. On the other hand, generation of CdTe QDs was found even under room temperature by applying droplet quantity of DAE. This indicates that QDs can be synthesized with simply a bottle and no enormous additives required. The QDs were mixed into the epoxy matrix through solution casting method with cetyltrimethylammonium (CTA) capping for phase transfer. The acquired epoxy based nanocomposite exhibits good transparency, compatibility and fluorescence.

  5. Applications of CdTe to nuclear medicine. Annual report, February 1, 1979-January 31, 1980

    International Nuclear Information System (INIS)

    Entine, G.

    1980-01-01

    The application of CdTe gamma detectors in nuclear medicine is reported on. An internal probe was developed which can be inserted into the heart to measure the efficiency of various radiopharmaceuticals in the treatment of heart attacks. A second application is an array of detectors which is light enough to be worn by ambulatory patients and can measure the change in cardiac output over an eight hour period during heart attack treatment. The instrument includes an on board tape recorder

  6. Edge effects in a small pixel CdTe for X-ray imaging

    Science.gov (United States)

    Duarte, D. D.; Bell, S. J.; Lipp, J.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.; Kachkanov, V.; Sawhney, K. J. S.

    2013-10-01

    Large area detectors capable of operating with high detection efficiency at energies above 30 keV are required in many contemporary X-ray imaging applications. The properties of high Z compound semiconductors, such as CdTe, make them ideally suitable to these applications. The STFC Rutherford Appleton Laboratory has developed a small pixel CdTe detector with 80 × 80 pixels on a 250 μm pitch. Historically, these detectors have included a 200 μm wide guard band around the pixelated anode to reduce the effect of defects in the crystal edge. The latest version of the detector ASIC is capable of four-side butting that allows the tiling of N × N flat panel arrays. To limit the dead space between modules to the width of one pixel, edgeless detector geometries have been developed where the active volume of the detector extends to the physical edge of the crystal. The spectroscopic performance of an edgeless CdTe detector bump bonded to the HEXITEC ASIC was tested with sealed radiation sources and compared with a monochromatic X-ray micro-beam mapping measurements made at the Diamond Light Source, U.K. The average energy resolution at 59.54 keV of bulk and edge pixels was 1.23 keV and 1.58 keV, respectively. 87% of the edge pixels present fully spectroscopic performance demonstrating that edgeless CdTe detectors are a promising technology for the production of large panel radiation detectors for X-ray imaging.

  7. High luminescent L-cysteine capped CdTe quantum dots prepared at different reaction times

    Science.gov (United States)

    Kiprotich, Sharon; Onani, Martin O.; Dejene, Francis B.

    2018-04-01

    This paper reports a facile synthesis route of high luminescent L-cysteine capped CdTe quantum dots (QDs). The effect of reaction time on the growth mechanism, optical and physical properties of the CdTe QDs was investigated in order to find the suitability of them towards optical and medical applications. The representative high-resolution transmission microscopy (HRTEM) analysis showed that the as-obtained CdTe QDs appeared as spherical particles with excellent monodispersity. The images exhibited clear lattice fringes which are indicative of good crystallinity. The X-ray diffraction (XRD) pattern displayed polycrystalline nature of the QDs which correspond well to zinc blende phase of bulk CdTe. The crystallite sizes calculated from the Scherrer equation were less than 10 nm for different reaction times which were in close agreement with the values estimated from HRTEM. An increase in reaction time improved crystallinity of the sample as explained by highest peak intensity of the XRD supported by the photoluminescence emission spectra which showed high intensity at a longer growth time. It was observed that for prolonged growth time the emission bands were red shifted from about 517-557 nm for 5-180 min of reaction time due to increase in particle sizes. Ultraviolet and visible analysis displayed well-resolved absorption bands which were red shifted upon an increase in reaction time. There was an inverse relation between the band gap and reaction time. Optical band gap decreases from 3.98 to 2.59 eV with the increase in reaction time from 15 to 180 min.

  8. Application of CdTe for the NeXT mission

    International Nuclear Information System (INIS)

    Takahashi, Tadayuki; Nakazawa, Kazuhiro; Watanabe, Shin; Sato, Goro; Mitani, Takefumi; Tanaka, Takaaki; Oonuki, Kousuke; Tamura, Ken'ichi; Tajima, Hiroyasu; Kamae, Tuneyoshi; Madejski, Greg; Nomachi, Masaharu; Fukazawa, Yasushi; Makishima, Kazuo; Kokubun, Motohide; Terada, Yukikatsu; Kataoka, Jun; Tashiro, Makoto

    2005-01-01

    Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and γ-ray detection. The high-atomic number of the materials (Z Cd =48,Z Te =52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (E g =1.5eV) allows to operate the detector at room temperature. Based on recent achievements in high-resolution CdTe detectors, in the technology of ASICs and in bump-bonding, we have proposed the novel hard X-ray and γ-ray detectors for the NeXT mission in Japan. The high-energy response of the super mirror onboard NeXT will enable us to perform the first sensitive imaging observations up to 80keV. The focal plane detector, which combines a fully depleted X-ray CCD and a pixellated CdTe detector, will provide spectra and images in the wide energy range from 0.5 to 80keV. In the soft γ-ray band up to ∼ 1MeV, a narrow field-of-view Compton γ-ray telescope utilizing several tens of layers of thin Si or CdTe detector will provide precise spectra with much higher sensitivity than present instruments. The continuum sensitivity will reach several x10 -8 photons -1 keV -1 cm -2 in the hard X-ray region and a few x10 -7 photons -1 keV -1 cm -2 in the soft γ-ray region

  9. Performance and Metastability of CdTe Solar Cells with a Te Back-Contact Buffer Layer

    Science.gov (United States)

    Moore, Andrew

    Thin-film CdTe photovoltaics are quickly maturing into a viable clean-energy solution through demonstration of competitive costs and performance stability with existing energy sources. Over the last half decade, CdTe solar technology has achieved major gains in performance; however, there are still aspects that can be improved to progress toward their theoretical maximum efficiency. Perhaps equally valuable as high photovoltaic efficiency and a low levelized cost of energy, is device reliability. Understanding the root causes for changes in performance is essential for accomplishing long-term stability. One area for potential performance enhancement is the back contact of the CdTe device. This research incorporated a thin-film Te-buffer layer into the contact structure, between the CdTe and contact metal. The device performance and characteristics of many different back contact configurations were rigorously studied. CdTe solar cells fabricated with the Te-buffer contact showed short-circuit current densities and open-circuit voltages that were on par with the traditional back-contacts used at CSU. However, the Te-buffer contact typically produced 2% larger fill-factors on average, leading to greater conversation efficiency. Furthermore, using the Te buffer allowed for incorporation of 50% less Cu, which is used for p-type doping but is also known to decrease lifetime and stability. This resulted in an additional 3% fill-factor gain with no change in other parameters compared to the standard-Cu treated device. In order to better understand the physical mechanisms of the Te-buffer contact, electrical and material properties of the Te layer were extracted and used to construct a simple energy band diagram. The Te layer was found to be highly p-type (>1018 cm-3) and possess a positive valence-band offset of 0.35-0.40 eV with CdTe. An existing simulation model incorporating the Te-layer properties was implemented and validated by comparing simulated results of CdTe

  10. Strain relaxation of CdTe on Ge studied by medium energy ion scattering

    Energy Technology Data Exchange (ETDEWEB)

    Pillet, J.C., E-mail: jean-christophe.pillet@cea.fr [Univ. Grenoble Alpes, CEA, LETI, MINATEC campus, F38000 Grenoble (France); CEA, LETI, Département Optique et Photonique, F38054 Grenoble (France); Pierre, F. [Univ. Grenoble Alpes, CEA, LETI, MINATEC campus, F38000 Grenoble (France); CEA, LETI, Service de Caractérisation des Matériaux et Composants, F38054 Grenoble (France); Jalabert, D. [Univ. Grenoble Alpes, CEA, LETI, MINATEC campus, F38000 Grenoble (France); CEA-INAC/UJF-Grenoble 1 UMR-E, SP2M, LEMMA, Minatec Grenoble F-38054 (France)

    2016-10-01

    We have used the medium energy ion scattering (MEIS) technique to assess the strain relaxation in molecular-beam epitaxial (MBE) grown CdTe (2 1 1)/Ge (2 1 1) system. A previous X-ray diffraction study, on 10 samples of the same heterostructure having thicknesses ranging from 25 nm to 10 μm has allowed the measurement of the strain relaxation on a large scale. However, the X-ray diffraction measurements cannot achieve a stress measurement in close proximity to the CdTe/Ge interface at the nanometer scale. Due to the huge lattice misfit between the CdTe and Ge, a high degree of disorder is expected at the interface. The MEIS in channeling mode is a good alternative in order to profile defects with a high depth resolution. For a 21 nm thick CdTe layer, we observed, at the interface, a high density of Cd and/or Te atoms moved from their expected crystallographic positions followed by a rapid recombination of defects. Strain relaxation mechanisms in the vicinity of the interface are discussed.

  11. Synthesis and characterization of CdTe nanostructures grown by RF magnetron sputtering method

    Science.gov (United States)

    Akbarnejad, Elaheh; Ghoranneviss, Mahmood; Hantehzadeh, Mohammad Reza

    2017-08-01

    In this paper, we synthesize Cadmium Telluride nanostructures by radio frequency (RF) magnetron sputtering system on soda lime glass at various thicknesses. The effect of CdTe nanostructures thickness on crystalline, optical and morphological properties has been studied by means of X-ray diffraction (XRD), UV-VIS-NIR spectrophotometry, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. The XRD parameters of CdTe nanostructures such as microstrain, dislocation density, and crystal size have been examined. From XRD analysis, it could be assumed that increasing deposition time caused the formation of the wurtzite hexagonal structure of the sputtered films. Optical properties of the grown nanostructures as a function of film thickness have been observed. All the films indicate more than 60% transmission over a wide range of wavelengths. The optical band gap values of the films have obtained in the range of 1.62-1.45 eV. The results indicate that an RF sputtering method succeeded in depositing of CdTe nanostructures with high purity and controllable physical properties, which is appropriate for photovoltaic and nuclear detector applications.

  12. Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Simonds, Brian J. [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Kheraj, Vipul [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Department of Applied Physics, S. V. National Institute of Technology, Surat 395 007 (India); Palekis, Vasilios; Ferekides, Christos [Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States); Scarpulla, Michael A., E-mail: scarpulla@eng.utah.edu [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)

    2015-06-14

    Laser processing of polycrystalline CdTe is a promising approach that could potentially increase module manufacturing throughput while reducing capital expenditure costs. For these benefits to be realized, the basic effects of laser irradiation on CdTe must be ascertained. In this study, we utilize surface photovoltage spectroscopy (SPS) to investigate the changes to the electronic properties of the surface of polycrystalline CdTe solar cell stacks induced by continuous-wave laser annealing. The experimental data explained within a model consisting of two space charge regions, one at the CdTe/air interface and one at the CdTe/CdS junction, are used to interpret our SPS results. The frequency dependence and phase spectra of the SPS signal are also discussed. To support the SPS findings, low-temperature spectrally-resolved photoluminescence and time-resolved photoluminescence were also measured. The data show that a modest laser treatment of 250 W/cm{sup 2} with a dwell time of 20 s is sufficient to reduce the effects of Fermi level pinning at the surface due to surface defects.

  13. Structural and luminescent properties of Fe3+ doped PVA capped CdTe nanoparticles

    Directory of Open Access Journals (Sweden)

    Ravindranadh K.

    2017-07-01

    Full Text Available During recent decades, magnetic and semiconductor nanoparticles have attracted significant attention of scientists in various fields of engineering, physics, chemistry, biology and medicine. Fe3+ doped PVA capped CdTe nanoparticles were prepared by co-precipitation method and characterized by powder X-ray diffraction, SEM, TEM, FT-IR, optical, EPR and PL techniques to collect the information about the crystal structure, coordination/local site symmetry of doped Fe3+ ions in the host lattice and the luminescent properties of prepared sample. Powder XRD data revealed that the crystal structure belongs to a cubic system and its lattice cell parameters were evaluated. The average crystallite size was estimated to be 8 nm. The morphology of prepared samples was analyzed by using SEM and TEM investigations. Functional groups of the prepared sample were observed in FT-IR spectra. Optical absorption and EPR studies have shown that on doping, Fe3+ ions enter the host lattice in octahedral site symmetry. PL studies of Fe3+ doped PVA capped CdTe nanoparticles revealed UV and blue emission bands. CIE chromaticity coordinates were also calculated from the emission spectrum of Fe3+ doped PVA capped CdTe nanoparticles.

  14. Excimer laser doping technique for application in an integrated CdTe imaging device

    CERN Document Server

    Mochizuki, D; Aoki, T; Tomita, Y; Nihashi, T; Hatanaka, Y

    1999-01-01

    CdTe is an attractive semiconductor material for applications in solid-state high-energy X-ray and gamma-ray imaging systems because of its high absorption coefficient, large band gap, good mobility lifetime product of holes and stability at normal atmospheric conditions. We propose a new concept for fabricating an integrated CdTe with monolithic circuit configuration for two-dimensional imaging systems suitable for medical, research or industrial applications and operation at room temperature. A new doping technique has been recently developed that employs excimer laser radiation to diffuse impurity atoms into the semiconductor. Accordingly, heavily doped n- and p-type layers with resistivities less than 1 OMEGA cm can be formed on the high resistive CdTe crystals. We have further extended this technique for doping with spatial pattern. We will present the laser doping technique and various results thus obtained. Spatially patterned doping is demonstrated and we propose the use of these doping techniques for...

  15. Segmented-spectrum detection mechanism for medical x-ray in CdTe

    Science.gov (United States)

    Shi, Zaifeng; Meng, Qingzhen; Cao, Qingjie; Yao, Suying

    2016-01-01

    This paper presents a segmented X-ray spectrum detection method based on a layered X-ray detector in Cadmium Telluride (CdTe) substrate. We describe the three-dimensional structure of proposed detector pixel and investigate the matched spectrum-resolving method. Polychromatic X-ray beam enter the CdTe substrate edge on and will be absorbed completely in different thickness varying with photon energy. Discrete potential wells are formed under external controlling voltage to collect the photo-electrons generated in different layers, and segmented X-ray spectrum can be deduced from the quantity of photo-electrons. In this work, we verify the feasibility of the segmented-spectrum detection mechanism by simulating the absorption of monochromatic X-ray in a CdTe substrate. Experiments in simulation show that the number of photo-electrons grow exponentially with the increase of incident thickness, and photons with different energy will be absorbed in various thickness. The charges generated in different layers are collected into adjacent potential wells, and collection efficiency is estimated to be about 87% for different incident intensity under the 40000V/cm electric field. Errors caused by charge sharing between neighboring layers are also analyzed, and it can be considered negligible by setting appropriate size of electrodes.

  16. Molecular beam epitaxy of iodine-doped CdTe and (CdMg)Te

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, F.; Waag, A.; Litz, Th.; Scholl, S.; Schmitt, M.; Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstofforschung, Stuttgart (Germany))

    1994-08-01

    The n-type doping of CdTe and (CdMg)Te by the use of the solid dopant source material ZnI[sub 2] is reported. Doping levels as high as 7x10[sup 18] cm[sup -3] have been obtained in CdTe with carrier mobilities around 500 cm[sup 2]/V[center dot]s at room temperature. For a dopant incorporation higher than 1x10[sup 19] cm[sup -3] the free carrier concentration decreases, indicating the onset of a compensation mechanism, which is observed in the case of chlorine and bromine doping, too. Preliminary experiments show that with increasing Mg concentration the free carrier concentration decreases. Nevertheless, CdMgTe with a magnesium concentration x=0.37 (band gap 2.2 eV at room temperature) can be doped up to 2x10[sup 17] cm[sup -3]. The existence of deep donor levels in this CdTe based ternary is not supposed to be the only reason for the reduction of the free carrier concentration. For high Mg support during molecular beam epitaxial (MBE) growth of wide gap (CdMg)Te layers, the ZnI[sub 2] incorporation is reduced, leading to low doping levels, too

  17. Comparison of structural properties of thermally evaporated CdTe thin films on different substrates

    International Nuclear Information System (INIS)

    Tariq, G.H.; Anis-ur-Rehman, M.

    2011-01-01

    The direct energy band gap in the range of 1.5 eV and the high absorption coefficient (105 cm/sup -1/) makes Cadmium Telluride (CdTe) a suitable material for fabrication of thin film solar cells. Thin film solar cells based on CdTe (1 cm area) achieved efficiency of 15.6% on a laboratory scale. CdTe thin films were deposited by thermal evaporation technique under vacuum 2 X 10/sup -5/mbar on glass and stainless steel (SS) substrates. During deposition substrates temperature was kept same at 200 deg. C for all samples. The structural properties were determined by the X-ray Diffraction (XRD) patterns. All samples exhibit polycrystalline nature. Dependence of different structural parameters such as lattice parameter, micro strain, and grain size and dislocation density on thickness was studied. Also the influence of the different substrates on these parameters was investigated. The analysis showed that the preferential orientation of films was dependent on the substrate type. (author)

  18. Prototype of high resolution PET using resistive electrode position sensitive CdTe detectors

    International Nuclear Information System (INIS)

    Kikuchi, Yohei; Ishii, Keizo; Matsuyama, Shigeo; Yamazaki, Hiromichi

    2008-01-01

    Downsizing detector elements makes it possible that spatial resolutions of positron emission tomography (PET) cameras are improved very much. From this point of view, semiconductor detectors are preferable. To obtain high resolution, the pixel type or the multi strip type of semiconductor detectors can be used. However, in this case, there is a low packing ratio problem, because a dead area between detector arrays cannot be neglected. Here, we propose the use of position sensitive semiconductor detectors with resistive electrode. The CdTe detector is promising as a detector for PET camera because of its high sensitivity. In this paper, we report development of prototype of high resolution PET using resistive electrode position sensitive CdTe detectors. We made 1-dimensional position sensitive CdTe detectors experimentally by changing the electrode thickness. We obtained 750 A as an appropriate thickness of position sensitive detectors, and evaluated the performance of the detector using a collimated 241 Am source. A good position resolution of 1.2 mm full width half maximum (FWHM) was obtained. On the basis of the fundamental development of resistive electrode position sensitive detectors, we constructed a prototype of high resolution PET which was a dual head type and was consisted of thirty-two 1-dimensional position sensitive detectors. In conclusion, we obtained high resolutions which are 0.75 mm (FWHM) in transaxial, and 1.5 mm (FWHM) in axial. (author)

  19. Photosensitive space charge limited current in screen printed CdTe thin films

    Science.gov (United States)

    Vyas, C. U.; Pataniya, Pratik; Zankat, Chetan K.; Patel, Alkesh B.; Pathak, V. M.; Patel, K. D.; Solanki, G. K.

    2018-05-01

    Group II-VI Compounds have emerged out as most suitable in the class of photo sensitive material. They represent a strong position in terms of their applications in the field of detectors as well as photo voltaic devices. Cadmium telluride is the prime member of this Group, because of high acceptance of this material as active component in opto-electronic devices. In this paper we report preparation and characterization of CdTe thin films by using a most economical screen printing technique in association with sintering at 510°C temperature. Surface morphology and smoothness are prime parameters of any deposited to be used as an active region of devices. Thus, we studied of the screen printed thin film by means of atomic force microscopy (AFM) and scanning electron microscopy (SEM) for this purpose. However, growth processes induced intrinsic defects in fabricated films work as charge traps and affect the conduction process significantly. So the conduction mechanism of deposited CdTe thin film is studied under dark as well as illuminated conditions. It is found that the deposited films showed the space charge limited conduction (SCLC) mechanism and hence various parameters of space charge limited conduction (SCLC) of CdTe film were evaluated and discussed and the photo responsive resistance is also presented in this paper.

  20. Defect characterization of CdTe thin films using a slow positron beam

    International Nuclear Information System (INIS)

    Neretina, S.; Grebennikov, D.; Mascher, P.; Hughes, R.A.; Weber, M.; Lynn, K.G.; Simpson, P.J.; Preston, J.S.

    2007-01-01

    Cadmium Telluride (CdTe) is the most well established II-VI compound largely due to its use as a photonic material. Existing applications, as well as those under consideration, are demanding increasingly stringent control of the material properties. The deposition of high quality thin films is of the utmost importance to such applications. In this regard, we present a report detailing the role of lattice mismatch in determining the film quality. Thin films were deposited on a wide variety of substrate materials using the pulsed laser deposition technique. Common to all substrates was the strong tendency towards the preferential alignment of CdTe's (111) planes parallel to the substrate's surface. X-ray diffraction analysis, however, revealed that the crystalline quality varied dramatically depending upon the substrate used with the best results yielding a single crystal film. This tendency also manifested itself in the surface morphology with higher structural perfection yielding smoother surfaces. Slow positron beam techniques revealed a strong correlation between the defect concentration and the degree of structural perfection. Simulations of the data using the POSTRAP 5 program were used to calculate the defect concentration in relative (atom -1 ) and absolute units and to determine the diffusion lengths of the positrons in the film. All of these characterization techniques point towards lattice mismatch as being the dominant mechanism in determining the quality of CdTe films. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. An optimized multilayer structure of CdS layer for CdTe solar cells application

    International Nuclear Information System (INIS)

    Han Junfeng; Liao Cheng; Jiang Tao; Spanheimer, C.; Haindl, G.; Fu, Ganhua; Krishnakumar, V.; Zhao Kui; Klein, A.; Jaegermann, W.

    2011-01-01

    Research highlights: → Two different methods to prepare CdS films for CdTe solar cells. → A new multilayer structure of window layer for the CdTe solar cell. → Thinner CdS window layer for the solar cell than the standard CdS layer. → Higher performance of solar cells based on the new multilayer structure. - Abstract: CdS layers grown by 'dry' (close space sublimation) and 'wet' (chemical bath deposition) methods are deposited and analyzed. CdS prepared with close space sublimation (CSS) has better crystal quality, electrical and optical properties than that prepared with chemical bath deposition (CBD). The performance of CdTe solar cell based on the CSS CdS layer has higher efficiency than that based on CBD CdS layer. However, the CSS CdS suffers from the pinholes. And consequently it is necessary to prepare a 150 nm thin film for CdTe/CdS solar cell. To improve the performance of CdS/CdTe solar cells, a thin multilayer structure of CdS layer (∼80 nm) is applied, which is composed of a bottom layer (CSS CdS) and a top layer (CBD CdS). That bi-layer film can allow more photons to pass through it and significantly improve the short circuit current of the CdS/CdTe solar cells.

  2. Pixelized M-pi-n CdTe detector coupled to Medipix2 readout chip

    CERN Document Server

    Kalliopuska, J; Penttila, R; Andersson, H; Nenonen, S; Gadda, A; Pohjonen, H; Vanttajac, I; Laaksoc, P; Likonen, J

    2011-01-01

    We have realized a simple method for patterning an M-pi-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration. The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. Th...

  3. First-principles-based analysis of the influence of Cu on CdTe electronic properties

    International Nuclear Information System (INIS)

    Krasikov, D.; Knizhnik, A.; Potapkin, B.; Selezneva, S.; Sommerer, T.

    2013-01-01

    The maximum voltage of CdTe solar cells is limited by low majority carrier concentration and doping difficulty. Copper that enters from the back contact can form both donors and acceptors in CdTe. It is empirically known that the free carrier concentration is several orders lower than the total Cu concentration. Simplified thermodynamic models of defect compensation after Cu introduction can be found in literature. We present a first-principles-based analysis of kinetics of defect formation upon Cu introduction, and show that Cu i is mobile at room temperature. Calculations of properties of Cu i –V Cd and Cu i –Cu Cd complexes show that the neutral Cu i –Cu Cd complex is mobile at elevated temperatures, while formation of the V Cd –Cu i complex is unlikely because it transforms into the Cu Cd defect. - Highlights: ► First-principles calculations of copper defects in CdTe are performed. ► Formation of Cd vacancy + Cu interstitial(Cu i ) complex is unlikely. ► Cu i defect is mobile at room temperature. ► Cu i + Cu on Cd-site (Cu Cd ) complex is mobile at elevated temperature. ► Cu Cd defect forms by kicking-out of the regular lattice Cd by Cu i

  4. Fast polycrystalline CdTe detectors for bunch-by-bunch luminosity monitoring in the LHC

    CERN Document Server

    Brambilla, A; Jolliot, M; Bravin, E

    2008-01-01

    The luminosity at the four interaction points of the Large Hadron Collider (LHC) must be continuously monitored in order to provide an adequate tool for the control and optimisation of beam parameters. Polycrystalline cadmium telluride (CdTe) detectors have previously been tested, showing their high potential to fulfil the requirements of luminosity measurement in the severe environment of the LHC interaction regions. Further, the large signal yield and the fast response time should allow bunch-by-bunch measurement of the luminosity at 40 MHz with high accuracy. Four luminosity monitors with two rows of five polycrystalline CdTe detectors each have been fabricated and will be installed at both sides of the low-luminosity interaction points ALICE and LHC-b. A detector housing was specially designed to meet the mechanical constraints in the LHC. A series of elementary CdTe detectors were fabricated and tested, of which 40 were selected for the luminosity monitors. A sensitivity of 104 electrons per minimum ioni...

  5. A stacked CdTe pixel detector for a compton camera

    International Nuclear Information System (INIS)

    Oonuki, Kousuke; Tanaka, Takaaki; Watanabe, Shin; Takeda, Shin'ichiro; Nakazawa, Kazuhiro; Ushio, Masayoshi; Mitani, Takefumi; Takahashi, Tadayuki; Tajima, Hiroyasu

    2007-01-01

    We are developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. A detector material of combined Si strip and CdTe pixel is used to cover the energy range around 60keV. For energies above several hundred keV, in contrast, the higher detection efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as both an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton camera, we developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton kinematics within the energy band from 122 to 662keV. The energy resolution (FWHM) of reconstructed spectra is 7.3keV at 511keV. The angular resolution obtained at 511keV is measured to be 12.2 deg. (FWHM)

  6. Compton profiles and band structure calculations of CdS and CdTe

    International Nuclear Information System (INIS)

    Heda, N.L.; Mathur, S.; Ahuja, B.L.; Sharma, B.K.

    2007-01-01

    In this paper we present the isotropic Compton profiles of zinc-blende CdS and CdTe measured at an intermediate resolution of 0.39 a.u. using our 20 Ci 137 Cs Compton spectrometer. The electronic band structure calculations for both the zinc-blende structure compounds and also wurtzite CdS have been undertaken using various schemes of ab-initio linear combination of atomic orbitals calculations implemented in CRYSTAL03 code. The band structure and Mulliken's populations are reported using density functional scheme. In case of wurtzite CdS, our theoretical anisotropies in directional Compton profiles are compared with available experimental data. In case of both the zinc-blende compounds, the isotropic experimental profiles are found to be in better agreement with the present Hartree-Fock calculations. A study of the equal-valence-electron-density experimental profiles of zinc-blende CdS and CdTe shows that the CdS is more ionic than CdTe. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Preparation of High Purity CdTe for Nuclear Detector: Electrical and Nuclear Characterization

    Science.gov (United States)

    Zaiour, A.; Ayoub, M.; Hamié, A.; Fawaz, A.; Hage-ali, M.

    High purity crystal with controllable electrical properties, however, control of the electrical properties of CdTe has not yet been fully achieved. Using the refined Cd and Te as starting materials, extremely high-purity CdTe single crystals were prepared by the traditional vertical THM. The nature of the defects involved in the transitions was studied by analyzing the position of the energy levels by TSC method. The resolution of 4.2 keV (FWHM) confirms the high quality and stability of the detectors: TSC spectrum was in coherence with detectors spectrum with a horizontal plate between 0.2 and 0.6 eV. The enhancement in resolution of detectors with a full width at half- maximum (less than 0.31 meV), lead to confirm that the combination of vacuum distillation and zone refining was very effective to obtain more purified CdTe single crystals for photovoltaic or nuclear detectors with better physical properties.

  8. Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Marwoto, Putut; Made, D. P. Ngurah; Sugianto [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Othaman, Zulkafli [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)

    2013-09-03

    Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

  9. Electro-Plating and Characterisation of CdTe Thin Films Using CdCl2 as the Cadmium Source

    Directory of Open Access Journals (Sweden)

    Nor A. Abdul-Manaf

    2015-09-01

    Full Text Available Cadmium telluride (CdTe thin films have been successfully prepared from an aqueous electrolyte bath containing cadmium chloride (CdCl2·H2O and tellurium dioxide (TeO2 using an electrodeposition technique. The structural, electrical, morphological and optical properties of these thin films have been characterised using X-ray diffraction (XRD, Raman spectroscopy, optical profilometry, DC current-voltage (I-V measurements, photoelectrochemical (PEC cell measurement, scanning electron microscopy (SEM, atomic force microscopy (AFM and UV-Vis spectrophotometry. It is observed that the best cathodic potential is 698 mV with respect to standard calomel electrode (SCE in a three electrode system. Structural analysis using XRD shows polycrystalline crystal structure in the as-deposited CdTe thin films and the peaks intensity increase after CdCl2 treatment. PEC cell measurements show the possibility of growing p-, i- and n-type CdTe layers by varying the growth potential during electrodeposition. The electrical resistivity of the as-deposited layers are in the order of 104 Ω·cm. SEM and AFM show that the CdCl2 treated samples are more roughness and have larger grain size when compared to CdTe grown by CdSO4 precursor. Results obtained from the optical absorption reveal that the bandgap of as-deposited CdTe (1.48–1.52 eV reduce to (1.45–1.49 eV after CdCl2 treatment. Full characterisation of this material is providing new information on crucial CdCl2 treatment of CdTe thin films due to its built-in CdCl2 treatment during the material growth. The work is progressing to fabricate solar cells with this material and compare with CdTe thin films grown by conventional sulphate precursors.

  10. Ecotoxicity of CdTe quantum dots to freshwater mussels: Impacts on immune system, oxidative stress and genotoxicity

    International Nuclear Information System (INIS)

    Gagne, F.; Auclair, J.; Turcotte, P.; Fournier, M.; Gagnon, C.; Sauve, S.; Blaise, C.

    2008-01-01

    The purpose of this study was to examine the toxic effects of cadmium-telluride (CdTe) quantum dots on freshwater mussels. Elliption complanata mussels were exposed to increasing concentrations of CdTe (0, 1.6, 4 and 8 mg/L) and cadmium sulfate (CdSO 4 , 0.5 mg/L) for 24 h at 15 o C. After the exposure period, they were removed for assessments of immunocompetence, oxidative stress (lipid peroxidation) and genotoxicity (DNA strand breaks). Preliminary experiments revealed that CdTe dissolved in aquarium water tended to aggregate in the particulate phase (85%) while 15% of CdTe was found in the dissolved phase. Immunotoxicity was characterized by a significant decrease in the number of hemocytes capable of ingesting fluorescent beads, and hemocyte viability. The cytotoxic capacity of hemocytes to lyse mammalian K-562 cells was significantly increased, but the number of circulating hemocytes remained unchanged. Lipid peroxidation was significantly increased at a threshold concentration of 5.6 mg/L in gills and significantly reduced in digestive glands at a threshold concentration <1.6 mg/L CdTe. The levels of DNA strand breaks were significantly reduced in gills at <1.6 mg/L CdTe. In digestive glands, a transient but marginal increase in DNA strand breaks occurred at the lowest concentration and dropped significantly at the higher concentrations. A multivariate analysis revealed that the various response patterns differed based on the concentration of CdTe, thus permitting the identification of biomarkers associated with the form (colloidal vs. molecular) of cadmium

  11. Ecotoxicity of CdTe quantum dots to freshwater mussels: Impacts on immune system, oxidative stress and genotoxicity

    Energy Technology Data Exchange (ETDEWEB)

    Gagne, F. [Fluvial Ecosystem Research, Environment Canada, 105 McGill Street, Montreal, Quebec, H2Y 2E7 (Canada)], E-mail: francois.gagne@ec.gc.ca; Auclair, J.; Turcotte, P. [Fluvial Ecosystem Research, Environment Canada, 105 McGill Street, Montreal, Quebec, H2Y 2E7 (Canada); Fournier, M. [INRS-Institut Armand-Frappier, 245 Hymus, Pointe-Claire, Quebec, H9R 3G6 (Canada); Gagnon, C. [Fluvial Ecosystem Research, Environment Canada, 105 McGill Street, Montreal, Quebec, H2Y 2E7 (Canada); Sauve, S. [Departement de Chimie, Universite de Montreal, C.P. 6128, Succursale Centre-ville, Montreal, Quebec, H3C 3J7 (Canada); Blaise, C. [Fluvial Ecosystem Research, Environment Canada, 105 McGill Street, Montreal, Quebec, H2Y 2E7 (Canada)

    2008-02-18

    The purpose of this study was to examine the toxic effects of cadmium-telluride (CdTe) quantum dots on freshwater mussels. Elliption complanata mussels were exposed to increasing concentrations of CdTe (0, 1.6, 4 and 8 mg/L) and cadmium sulfate (CdSO{sub 4}, 0.5 mg/L) for 24 h at 15 {sup o}C. After the exposure period, they were removed for assessments of immunocompetence, oxidative stress (lipid peroxidation) and genotoxicity (DNA strand breaks). Preliminary experiments revealed that CdTe dissolved in aquarium water tended to aggregate in the particulate phase (85%) while 15% of CdTe was found in the dissolved phase. Immunotoxicity was characterized by a significant decrease in the number of hemocytes capable of ingesting fluorescent beads, and hemocyte viability. The cytotoxic capacity of hemocytes to lyse mammalian K-562 cells was significantly increased, but the number of circulating hemocytes remained unchanged. Lipid peroxidation was significantly increased at a threshold concentration of 5.6 mg/L in gills and significantly reduced in digestive glands at a threshold concentration <1.6 mg/L CdTe. The levels of DNA strand breaks were significantly reduced in gills at <1.6 mg/L CdTe. In digestive glands, a transient but marginal increase in DNA strand breaks occurred at the lowest concentration and dropped significantly at the higher concentrations. A multivariate analysis revealed that the various response patterns differed based on the concentration of CdTe, thus permitting the identification of biomarkers associated with the form (colloidal vs. molecular) of cadmium.

  12. Investigation of Processing, Microstructures and Efficiencies of Polycrystalline CdTe Photovoltaic Films and Devices

    Science.gov (United States)

    Munshi, Amit Harenkumar

    CdTe based photovoltaics have been commercialized at multiple GWs/year level. The performance of CdTe thin film photovoltaic devices is sensitive to process conditions. Variations in deposition temperatures as well as other treatment parameters have a significant impact on film microstructure and device performance. In this work, extensive investigations are carried out using advanced microstructural characterization techniques in an attempt to relate microstructural changes due to varying deposition parameters and their effects on device performance for cadmium telluride based photovoltaic cells deposited using close space sublimation (CSS). The goal of this investigation is to apply advanced material characterization techniques to aid process development for higher efficiency CdTe based photovoltaic devices. Several techniques have been used to observe the morphological changes to the microstructure along with materials and crystallographic changes as a function of deposition temperature and treatment times. Traditional device structures as well as advanced structures with electron reflector and films deposited on Mg1-xZnxO instead of conventional CdS window layer are investigated. These techniques include Scanning Electron Microscopy (SEM) with Electron Back Scattered Diffraction (EBSD) and Energy dispersive X-ray spectroscopy (EDS) to study grain structure and High Resolution Transmission Electron Microscopy (TEM) with electron diffraction and EDS. These investigations have provided insights into the mechanisms that lead to change in film structure and device performance with change in deposition conditions. Energy dispersive X-ray spectroscopy (EDS) is used for chemical mapping of the films as well as to understand interlayer material diffusion between subsequent layers. Electrical performance of these devices has been studied using current density vs voltage plots. Devices with efficiency over 18% have been fabricated on low cost commercial glass substrates

  13. A computational ab initio study of surface diffusion of sulfur on the CdTe (111) surface

    Energy Technology Data Exchange (ETDEWEB)

    Naderi, Ebadollah, E-mail: enaderi42@gmail.com [Department of Physics, Savitribai Phule Pune University (SPPU), Pune-411007 (India); Ghaisas, S. V. [Department of Electronic Science, Savitribai Phule Pune University (SPPU), Pune-411007 (India)

    2016-08-15

    In order to discern the formation of epitaxial growth of CdS shell over CdTe nanocrystals, kinetics related to the initial stages of the growth of CdS on CdTe is investigated using ab-initio methods. We report diffusion of sulfur adatom on the CdTe (111) A-type (Cd-terminated) and B-type (Te-terminated) surfaces within the density functional theory (DFT). The barriers are computed by applying the climbing Nudge Elastic Band (c-NEB) method. From the results surface hopping emerges as the major mode of diffusion. In addition, there is a distinct contribution from kick-out type diffusion in which a CdTe surface atom is kicked out from its position and is replaced by the diffusing sulfur atom. Also, surface vacancy substitution contributes to the concomitant dynamics. There are sites on the B- type surface that are competitively close in terms of the binding energy to the lowest energy site of epitaxy on the surface. The kick-out process is more likely for B-type surface where a Te atom of the surface is displaced by a sulfur adatom. Further, on the B-type surface, subsurface migration of sulfur is indicated. Furthermore, the binding energies of S on CdTe reveal that on the A-type surface, epitaxial sites provide relatively higher binding energies and barriers than on B-type.

  14. A computational ab initio study of surface diffusion of sulfur on the CdTe (111) surface

    Science.gov (United States)

    Naderi, Ebadollah; Ghaisas, S. V.

    2016-08-01

    In order to discern the formation of epitaxial growth of CdS shell over CdTe nanocrystals, kinetics related to the initial stages of the growth of CdS on CdTe is investigated using ab-initio methods. We report diffusion of sulfur adatom on the CdTe (111) A-type (Cd-terminated) and B-type (Te-terminated) surfaces within the density functional theory (DFT). The barriers are computed by applying the climbing Nudge Elastic Band (c-NEB) method. From the results surface hopping emerges as the major mode of diffusion. In addition, there is a distinct contribution from kick-out type diffusion in which a CdTe surface atom is kicked out from its position and is replaced by the diffusing sulfur atom. Also, surface vacancy substitution contributes to the concomitant dynamics. There are sites on the B- type surface that are competitively close in terms of the binding energy to the lowest energy site of epitaxy on the surface. The kick-out process is more likely for B-type surface where a Te atom of the surface is displaced by a sulfur adatom. Further, on the B-type surface, subsurface migration of sulfur is indicated. Furthermore, the binding energies of S on CdTe reveal that on the A-type surface, epitaxial sites provide relatively higher binding energies and barriers than on B-type.

  15. A computational ab initio study of surface diffusion of sulfur on the CdTe (111) surface

    International Nuclear Information System (INIS)

    Naderi, Ebadollah; Ghaisas, S. V.

    2016-01-01

    In order to discern the formation of epitaxial growth of CdS shell over CdTe nanocrystals, kinetics related to the initial stages of the growth of CdS on CdTe is investigated using ab-initio methods. We report diffusion of sulfur adatom on the CdTe (111) A-type (Cd-terminated) and B-type (Te-terminated) surfaces within the density functional theory (DFT). The barriers are computed by applying the climbing Nudge Elastic Band (c-NEB) method. From the results surface hopping emerges as the major mode of diffusion. In addition, there is a distinct contribution from kick-out type diffusion in which a CdTe surface atom is kicked out from its position and is replaced by the diffusing sulfur atom. Also, surface vacancy substitution contributes to the concomitant dynamics. There are sites on the B- type surface that are competitively close in terms of the binding energy to the lowest energy site of epitaxy on the surface. The kick-out process is more likely for B-type surface where a Te atom of the surface is displaced by a sulfur adatom. Further, on the B-type surface, subsurface migration of sulfur is indicated. Furthermore, the binding energies of S on CdTe reveal that on the A-type surface, epitaxial sites provide relatively higher binding energies and barriers than on B-type.

  16. The effects of anode material type on the optoelectronic properties of electroplated CdTe thin films and the implications for photovoltaic application

    Science.gov (United States)

    Echendu, O. K.; Dejene, B. F.; Dharmadasa, I. M.

    2018-03-01

    The effects of the type of anode material on the properties of electrodeposited CdTe thin films for photovoltaic application have been studied. Cathodic electrodeposition of two sets of CdTe thin films on glass/fluorine-doped tin oxide (FTO) was carried out in two-electrode configuration using graphite and platinum anodes. Optical absorption spectra of films grown with graphite anode displayed significant spread across the deposition potentials compared to those grown with platinum anode. Photoelectrochemical cell result shows that the CdTe grown with graphite anode became p-type after post-deposition annealing with prior CdCl2 treatment, as a result of carbon incorporation into the films, while those grown with platinum anode remained n-type after annealing. A review of recent photoluminescence characterization of some of these CdTe films reveals the persistence of a defect level at (0.97-0.99) eV below the conduction band in the bandgap of CdTe grown with graphite anode after annealing while films grown with platinum anode showed the absence of this defect level. This confirms the impact of carbon incorporation into CdTe. Solar cell made with CdTe grown with platinum anode produced better conversion efficiency compared to that made with CdTe grown using graphite anode, underlining the impact of anode type in electrodeposition.

  17. Atmospheric Pressure Chemical Vapor Deposition of CdTe for High-Efficiency Thin-Film PV Devices; Annual Report, 26 January 1998-25 January 1999

    Energy Technology Data Exchange (ETDEWEB)

    Meyers, P. V. [ITN Energy Systems, Wheat Ridge, Colorado (US); Kee, R.; Wolden, C.; Raja, L.; Kaydanov, V.; Ohno, T.; Collins, R.; Aire, M.; Kestner, J. [Colorado School of Mines, Golden, Colorado (US); Fahrenbruch, A. [ALF, Inc., Stanford, California (US)

    1999-09-30

    ITN's 3-year project, titled ''Atmospheric Pressure Chemical Vapor Deposition (APCVD) of CdTe for High-Efficiency Thin-Film Photovoltaic (PV) Devices,'' has the overall objectives of improving thin-film CdTe PV manufacturing technology and increasing CdTe PV device power conversion efficiency. CdTe deposition by APCVD employs the same reaction chemistry as has been used to deposit 16%-efficient CdTe PV films, i.e., close-spaced sublimation, but employs forced convection rather than diffusion as a mechanism of mass transport. Tasks of the APCVD program center on demonstrating APCVD of CdTe films, discovering fundamental mass-transport parameters, applying established engineering principles to the deposition of CdTe films, and verifying reactor design principles that could be used to design high-throughput, high-yield manufacturing equipment. Additional tasks relate to improved device measurement and characterization procedures that can lead to a more fundamental understanding of CdTe PV device operation, and ultimately, to higher device conversion efficiency and greater stability. Specifically, under the APCVD program, device analysis goes beyond conventional one-dimensional device characterization and analysis toward two-dimension measurements and modeling. Accomplishments of the first year of the APCVD subcontract include: selection of the Stagnant Flow Reactor design concept for the APCVD reactor, development of a detailed reactor design, performance of detailed numerical calculations simulating reactor performance, fabrication and installation of an APCVD reactor, performance of dry runs to verify reactor performance, performance of one-dimensional modeling of CdTe PV device performance, and development of a detailed plan for quantification of grain-boundary effects in polycrystalline CdTe devices.

  18. Correction of diagnostic x-ray spectra measured with CdTe and CdZnTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, M [Osaka Univ., Suita (Japan). Medical School; Kanamori, H; Toragaito, T; Taniguchi, A

    1996-07-01

    We modified the formula of stripping procedure presented by E. Di. Castor et al. We added the Compton scattering and separated K{sub {alpha}} radiation of Cd and Te (23 and 27keV, respectively). Using the new stripping procedure diagnostic x-ray spectra (object 4mm-Al) of tube voltage 50kV to 100kV for CdTe and CdZnTe detectors are corrected with comparison of those spectra for the Ge detector. The corrected spectra for CdTe and CdZnTe detectors coincide with those for Ge detector at lower tube voltage than 70kV. But the corrected spectra at higher tube voltage than 70kV do not coincide with those for Ge detector. The reason is incomplete correction for full energy peak efficiencies of real CdTe and CdZnTe detectors. (J.P.N.)

  19. CdTe QDs-based prostate-specific antigen probe for human prostate cancer cell imaging

    International Nuclear Information System (INIS)

    Dong Wei; Guo Li; Wang Meng; Xu Shukun

    2009-01-01

    L-glutathione (GSH) stabilized CdTe quantum dots (QDs) were directly prepared in aqueous solution. The as-prepared QDs were linked to prostate-specific antigen (PSA) for the direct labeling and linked to immunoglobulin G (IgG) for the indirect labeling of fixed prostate cancer cells. The results indicated that QD-based probes were ideal fluorescent markers with excellent spectral properties and photostability and much better than organic dyes making them very suitable in target detection. Meanwhile, the indirect labeling showed much better specificity than the direct labeling. Furthermore, the prepared CdTe QDs did not show detectable effect on cell growth after having cultured for three days, which suggested that the L-glutathione capped CdTe had scarcely cytotoxicity.

  20. Direct Analysis of JV-Curves Applied to an Outdoor-Degrading CdTe Module (Presentation)

    Energy Technology Data Exchange (ETDEWEB)

    Jordan, D; Kurtz, S.; Ulbrich, C.; Gerber, A.; Rau, U.

    2014-03-01

    We present the application of a phenomenological four parameter equation to fit and analyze regularly measured current density-voltage JV curves of a CdTe module during 2.5 years of outdoor operation. The parameters are physically meaningful, i.e. the short circuit current density Jsc, open circuit voltage Voc and differential resistances Rsc, and Roc. For the chosen module, the fill factor FF degradation overweighs the degradation of Jsc and Voc. Interestingly, with outdoor exposure, not only the conductance at short circuit, Gsc, increases but also the Gsc(Jsc)-dependence. This is well explained with an increase in voltage dependent charge carrier collection in CdTe.

  1. About the use of photoacoustic spectroscopy for the optical characterization of semiconductor thin films: CdTe

    International Nuclear Information System (INIS)

    Marin, E.; Calderon, A.; Vigil G, O.; Sastre, J.; Contreras P, G.; Aguilar H, J.; Saucedo, E.; Ruiz, C.M.

    2006-01-01

    CdTe has been used satisfactorily in multiple and diverse technological applications such as detectors of X and gamma rays that operate at room temperature, for digital imagenology of X rays with medical and industrial applications and as active part in CdTe/CdS solar cells. In form of films, CdTe is generally grown with thicknesses ranging between 3 and 15 μm, for which it is difficult to measure, by means of optical techniques, absorption coefficients greater than 10 3 cm -1 because nearly full absorption of light should occur below 800 nm. The exact determination of the optical absorption coefficient in detectors on the basis of CdTe is very important since this parameter determines the absorption length at which 90% of the photons with energies over the forbidden zone of the CdTe will be absorbed by this. In CdS/CdTe polycrystalline solar cells the greater efficiency of conversion have been reported for film thicknesses of 10 mm, however, the optimal value of this parameter depends strongly on the method and the variables of growth. The optical absorption coefficient spectrum can be determined by several methods, often involving several approximations and the knowledge of some minority carrier related electronic parameters that reduce their application in general way. In this work we propose to determine the absorption coefficient in CdTe thin films by photoacoustic spectroscopy (PAS), because this technique allow us to obtain the optical absorption spectra in thicker layers and therefore the study of the influence of the several growth and post-growth processes in the optical properties of this thin films. We measure by PAS the optical-absorption coefficients of CdTe thin films in the spectral region near the fundamental absorption edge ranging from 1.0 to 2.4 eV using an open cell in the transmission configuration. The films were deposited on different substrates by the CSVT-HW (hot wall) technique. In order to study the influence of several growth

  2. About the use of photoacoustic spectroscopy for the optical characterization of semiconductor thin films: CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Marin, E.; Calderon, A. [CICATA-IPN, Av. Legaria 694, 11500 Mexico D.F. (Mexico); Vigil G, O.; Sastre, J.; Contreras P, G.; Aguilar H, J. [ESFM-IPN, 07738 Mexico D.F. (Mexico); Saucedo, E.; Ruiz, C.M. [Departamento de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, 28049 Madrid (Spain)

    2006-07-01

    CdTe has been used satisfactorily in multiple and diverse technological applications such as detectors of X and gamma rays that operate at room temperature, for digital imagenology of X rays with medical and industrial applications and as active part in CdTe/CdS solar cells. In form of films, CdTe is generally grown with thicknesses ranging between 3 and 15 {mu}m, for which it is difficult to measure, by means of optical techniques, absorption coefficients greater than 10{sup 3} cm{sup -1} because nearly full absorption of light should occur below 800 nm. The exact determination of the optical absorption coefficient in detectors on the basis of CdTe is very important since this parameter determines the absorption length at which 90% of the photons with energies over the forbidden zone of the CdTe will be absorbed by this. In CdS/CdTe polycrystalline solar cells the greater efficiency of conversion have been reported for film thicknesses of 10 mm, however, the optimal value of this parameter depends strongly on the method and the variables of growth. The optical absorption coefficient spectrum can be determined by several methods, often involving several approximations and the knowledge of some minority carrier related electronic parameters that reduce their application in general way. In this work we propose to determine the absorption coefficient in CdTe thin films by photoacoustic spectroscopy (PAS), because this technique allow us to obtain the optical absorption spectra in thicker layers and therefore the study of the influence of the several growth and post-growth processes in the optical properties of this thin films. We measure by PAS the optical-absorption coefficients of CdTe thin films in the spectral region near the fundamental absorption edge ranging from 1.0 to 2.4 eV using an open cell in the transmission configuration. The films were deposited on different substrates by the CSVT-HW (hot wall) technique. In order to study the influence of several

  3. Density functional theory calculations establish the experimental evidence of the DX center atomic structure in CdTe.

    Science.gov (United States)

    Lany, Stephan; Wolf, Herbert; Wichert, Thomas

    2004-06-04

    The In DX center and the DX-like configuration of the Cd host atom in CdTe are investigated using density functional theory. The simultaneous calculation of the atomic structure and the electric field gradient (EFG) allows one to correlate the theoretically predicted structure of the DX center with an experimental observable, namely, the EFG obtained from radioactive 111In/111Cd probe atoms in In doped CdTe. In this way, the experimental identification of the DX center structure is established.

  4. Preparation and characterization of pulsed laser deposited CdTe thin films at higher FTO substrate temperature and in Ar + O{sub 2} atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Chao; Ming, Zhenxun [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Li, Bing, E-mail: libing70@126.com [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Feng, Lianghuan [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Wu, Judy [Department of Physics and Astronomy, Kansas University, Lawrence 66045 (United States)

    2013-06-20

    Highlights: • CdTe films were deposited by PLD at high substrate temperatures (400 °C, 550 °C). • CdTe films were achieved under the atmosphere (1.2 Torr) of Ar mixed with O{sub 2}. • Deposited CdTe films were cubic phase and had strong (1 0 0) preferred orientation. • Scanning electron microscope (SEM) showed an average grain size of 0.3–0.6 μm. • The ultra-thin film (CdS/PLD-CdTe) solar cell with efficiency of 6.68% was made. -- Abstract: Pulsed laser deposition (PLD) is one of the promising techniques for depositing cadmium telluride (CdTe) thin films. It has been reported that PLD CdTe thin films were almost deposited at the lower substrate temperatures (<300 °C) under vacuum conditions. However, the poor crystallinity of CdTe films prepared in this way renders them not conducive to the preparation of high-efficiency CdTe solar cells. To obtain high-efficiency solar cell devices, better crystallinity and more suitable grain size are needed, which requires the CdTe layer to be deposited by PLD at high substrate temperatures (>400 °C). In this paper, CdTe layers were deposited by PLD (KrF, λ = 248 nm, 10 Hz) at different higher substrate temperatures (T{sub s}). Excellent performance of CdTe films was achieved at higher substrate temperatures (400 °C, 550 °C) under an atmosphere of Ar mixed with O{sub 2} (1.2 Torr). X-ray diffraction analysis confirmed the formation of CdTe cubic phase with a strong (1 0 0) preferential orientation at all substrates temperatures on 60 mJ laser energy. The optical properties of CdTe were investigated, and the band gaps of CdTe films were 1.51 eV and 1.49 eV at substrate temperatures of 400 °C and 550 °C, respectively. Scanning electron microscopy (SEM) showed an average grain size of 0.3–0.6 μm. Thus, under these conditions of the atmosphere of Ar + O{sub 2} (15 Torr) and at the relatively high T{sub s} (500 °C), an thin-film (FTO/PLD-CdS (100 nm)/PLD-CdTe (∼1.5 μm)/HgTe: Cu/Ag) solar cell with an

  5. Basic performance and stability of a CdTe solid-state detector panel.

    Science.gov (United States)

    Tsuchiya, Katsutoshi; Takahashi, Isao; Kawaguchi, Tsuneaki; Yokoi, Kazuma; Morimoto, Yuuichi; Ishitsu, Takafumi; Suzuki, Atsurou; Ueno, Yuuichirou; Kobashi, Keiji

    2010-05-01

    We have developed a prototype gamma camera system (R1-M) using a cadmium telluride (CdTe) detector panel and evaluated the basic performance and the spectral stability. The CdTe panel consists of 5-mm-thick crystals. The field of view is 134 x 268 mm comprising 18,432 pixels with a pixel pitch of 1.4 mm. Replaceable small CdTe modules are mounted on to the circuit board by dedicated zero insertion force connectors. To make the readout circuit compact, the matrix read out is processed by dedicated ASICs. The panel is equipped with a cold-air cooling system. The temperature and humidity in the panel were kept at 20 degrees C and below 70% relative humidity. CdTe polarization was suppressed by the bias refresh technique to stabilize the detector. We also produced three dedicated square pixel-matched collimators: LEGP (20 mm-thick), LEHR (27 mm-thick), and LEUHR (35 mm-thick). We evaluated their basic performance (energy resolution, system resolution, and sensitivity) and the spectral stability in terms of short-term (several hours of continuous acquisition) and long-term (infrequent measurements over more than a year) activity. The intrinsic energy resolution (FWHM) acquired with Tc-99m (140.5 keV) was 6.6%. The spatial resolutions (FWHM at a distance of 100 mm) with LEGP, LEHR, and LEUHR collimators were 5.7, 4.9, and 4.2 mm, and the sensitivities were 71, 39, and 23 cps/MBq, respectively. The energy peak position and the intrinsic energy resolution after several hours of operation were nearly the same as the values a few minutes after the system was powered on; the variation of the peak position was <0.2%, and that of the resolution was about 0.3%. Infrequent measurements conducted over a year showed that the variations of the energy peak position and the intrinsic energy resolution of the system were at a similar level to those described above. The basic performance of the CdTe-gamma camera system was evaluated, and its stability was verified. It was shown that the

  6. Study of CdTe surface by SIMS and RBS ellipsometry

    International Nuclear Information System (INIS)

    Stuck, R.; Hage-Ali, M.; Grob, A.; Siffert, P.

    1978-01-01

    For a better understanding of the mechanisms involved in the rectification of metal-cadmium telluride contacts, the surface of bromine-methanol etched CdTe crystals by means of ellipsometry, secondary ions mass spectroscopy (SIMS) and Rutherford backscattering of charged particles (RBS) has been investigated. The results show that these surfaces are contaminated with bromine and that a tellurium surface oxide layer grows, its thickness increasing with time. This surface layer composition has been analyzed at different steps of its evolution [fr

  7. Photoresponse of hybrids made of carbon nanotubes and CdTe nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Zebli, Bernd; Vieyra, Hugo A.; Kotthaus, Joerg P. [Department fuer Physik and Center for NanoScience (CeNS), Ludwig-Maximilians-Universitaet Muenchen, Geschwister-Scholl-Platz 1, 80539 Munich (Germany); Carmeli, Itai [Department of Chemistry and Biochemistry, Tel-Aviv University, Tel-Aviv 69978 (Israel); Hartschuh, Achim [Department fuer Chemie, Physikalische Chemie, Butenandtstr. 5-13 E, 81377 Munich (Germany); Holleitner, Alexander W. [Walter-Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching (Germany)

    2008-07-01

    We observe that the photoresponse of single-walled carbon nanotubes can be adjusted by the absorption characteristics of colloidal CdTe nanocrystals, which are bound to the side-walls of the carbon nanotubes via molecular recognition. To this end, the hybrid systems are characterized using charge transport measurements under resonant optical excitation of the carbon nanotubes and nanocrystals, respectively. We investigate the photoresponse of both ensembles of hybrid systems and single carbon-nanotube-nanocrystal-hybrids. The data suggest a bolometrically induced increase of the current in the carbon nanotubes, which is due to photon absorption in the nanocrystals.

  8. Thick epitaxial CdTe films grown by close space sublimation on Ge substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Q; Haliday, D P; Tanner, B K; Brinkman, A W [Department of Physics, University of Durham. Science Site, Durham, DH1 3LE (United Kingdom); Cantwell, B J; Mullins, J T; Basu, A [Durham Scientific Crystals Ltd., NetPark, Thomas Wright Way, Sedgefield, County Durham, TS21 3FD (United Kingdom)], E-mail: Q.Z.Jiang@durham.ac.uk

    2009-01-07

    This paper reports, for the first time, the successful growth of 200 {mu}m thick CdTe films on mis-oriented Ge(1 0 0) substrates by a cost-effective optimized close space sublimation method. It is found that, as the thickness increases to a few hundred micrometres, subgrains are formed probably as a result of the large density of dislocations and strain within the initial interfacial layers. The films are of high quality (x-ray rocking curve width {approx}100 arcsec) and high resistance ({approx}10{sup 9} {omega} cm), and are thus candidates for x-ray and {gamma}-ray detectors. (fast track communication)

  9. Qualification of a new defect revealing etch for CdTe using cathodoluminescence microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Watson, C.C.R.; Durose, K. (Dept. of Physics, Univ. of Durham (United Kingdom)); Banister, A.J. (Dept. of Chemistry, Univ. of Durham (United Kingdom)); O' Keefe, E.; Bains, S.K. (Philips Infrared Defence Components, Southampton (United Kingdom))

    1993-01-30

    The action of a new defect revealing etch comprising a saturated FeCl[sub 3] solution has been investigated. The etch was found suitable for use on (111)A, (anti 1anti 1anti 1)B and other surface orientations of CdTe, and (111)A and (anti 1anti 1anti 1)B surfaces of Cd[sub 0.96]Zn[sub 0.04] Te. Direct correlations with cathodoluminescence and infra-red microscopy have shown the etch to successfully reveal twin boundaries, precipitates and dislocations. A background etch rate of approximately 2 [mu]m min[sup -1] has been measured. (orig.).

  10. Digital signal processing for CdTe detectors using VXIbus data collection systems

    Energy Technology Data Exchange (ETDEWEB)

    Fukuda, Daiji; Takahashi, Hiroyuki; Kurahashi, Tomohiko; Iguchi, Tetsuo; Nakazawa, Masaharu

    1996-07-01

    Recently fast signal digitizing technique has been developed, and signal waveforms with very short time periods can be obtained. In this paper, we analyzed each measured pulse which was digitized by an apparatus of this kind, and tried to improve an energy resolution of a CdTe semiconductor detector. The result of the energy resolution for {sup 137}Cs 662 keV photopeak was 13 keV. Also, we developed a fast data collection system based on VXIbus standard, and the counting rate on this system was obtained about 50 counts per second. (author)

  11. Study of CdTe quantum dots grown using a two-step annealing method

    Science.gov (United States)

    Sharma, Kriti; Pandey, Praveen K.; Nagpal, Swati; Bhatnagar, P. K.; Mathur, P. C.

    2006-02-01

    High size dispersion, large average radius of quantum dot and low-volume ratio has been a major hurdle in the development of quantum dot based devices. In the present paper, we have grown CdTe quantum dots in a borosilicate glass matrix using a two-step annealing method. Results of optical characterization and the theoretical model of absorption spectra have shown that quantum dots grown using two-step annealing have lower average radius, lesser size dispersion, higher volume ratio and higher decrease in bulk free energy as compared to quantum dots grown conventionally.

  12. Evaluation of XRI-UNO CdTe detector for nuclear medical imaging

    International Nuclear Information System (INIS)

    Jambi, L.K.; Lees, J.E.; Bugby, S.L.; Alqahtani, M.S.; Tipper, S.; Perkins, A.C.

    2015-01-01

    Over the last two decades advances in semiconductor detector technology have reached the point where they are sufficiently sensitive to become an alternative to scintillators for high energy gamma ray detection for application in fields such as medical imaging. This paper assessed the Cadmium-Telluride (CdTe) XRI-UNO semiconductor detector produced by X-RAY Imatek for photon energies of interest in nuclear imaging. The XRI-UNO detector was found to have an intrinsic spatial resolution of <0.5mm and a high incident count rate capability up to at least 1680cps. The system spatial resolution, uniformity and sensitivity characteristics are also reported

  13. Unified Numerical Solver for Device Metastabilities in CdTe Thin-Film PV

    Energy Technology Data Exchange (ETDEWEB)

    Vasileska, Dragica [Arizona State Univ., Tempe, AZ (United States)

    2017-08-17

    Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers de-vote significant empirical efforts to study these phenomena and to improve semiconduc-tor device stability. Still, understanding the underlying reasons of these instabilities re-mains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most com-monly alleged causes of metastability in CdTe device, such as “migration of Cu,” have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses sug-gesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe pro-vide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic de-fects; for example, changing the state of an impurity from an interstitial donor to a sub-stitutional acceptor often is accompanied by generation of a compensating intrinsic in-terstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the elec-trical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of

  14. Technical evaluation of Solar Cells, Inc., CdTe module and array at NREL

    Energy Technology Data Exchange (ETDEWEB)

    Kroposki, B.; Strand, T.; Hansen, R. [National Renewable Energy Lab., Golden, CO (United States); Powell, R.; Sasala, R. [Solar Cells, Inc., Toledo, OH (United States)

    1996-05-01

    The Engineering and Technology Validation Team at the National Renewable Energy Laboratory (NREL) conducts in-situ technical evaluations of polycrystalline thin-film photovoltaic (PV) modules and arrays. This paper focuses on the technical evaluation of Solar Cells, Inc., (SCI) cadmium telluride (CdTe) module and array performance by attempting to correlate individual module and array performance. This is done by examining the performance and stability of the modules and array over a period of more than one year. Temperature coefficients for module and array parameters (P{sub max}, V{sub oc}, V{sub max}, I{sub sc}, I{sub max}) are also calculated.

  15. Deposition of CdTe films under microgravity: Foton M3 mission

    Energy Technology Data Exchange (ETDEWEB)

    Benz, K.W.; Croell, A. [Freiburger Materialforschungszentrum FMF, Albert-Ludwigs-Universitaet Freiburg (Germany); Zappettini, A.; Calestani, D. [CNR Parma, Instituto Materiali Speciali per Elettronica e Magnetismo IMEM, Fontani Parma (Italy); Dieguez, E. [Universidad Autonoma de Madrid (Spain). Departamento de Fisica de Materiales; Carotenuto, L.; Bassano, E. [Telespazio Napoli, Via Gianturco 31, 80146 Napoli (Italy); Fiederle, M.

    2009-10-15

    Experiments of deposition of CdTe films have been carried out under microgravity in the Russian Foton M3 mission. The influence of gravity has been studied with these experiments and compared to the results of simulations. The measured deposition rate could be confirmed by the theoretical results for lower temperatures. For higher temperatures the measured thickness of the deposited films was larger compared to the theoretical data. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. A basic component for ISGRI, the CdTe gamma camera on board the INTEGRAL satellite

    International Nuclear Information System (INIS)

    Arques, M.; Baffert, N.; Lattard, D.

    1999-01-01

    A basic component, called Polycell, has been developed for the ISGRI (INTEGRAL Soft Gamma Ray Imager) CdTe camera on board the INTEGRAL (INTErnational Gamma-Ray Astrophysics Laboratory) satellite. Operating at room temperature, it covers the 20 keV--1 MeV energy range. It features a sub-ensemble of 16 CdTe detectors and their associated front end electronics. This electronics is based on 4-channel analog-digital ASICs. Their analog part features a low noise preamplifier, allowing a threshold below 20 keV and a pulse rise-time measurement which permits a charge loss correction. The digital part ensures the internal acquisition timing sequence as well as the dialogue with external electronics. Two versions of the ISGRI ASIC have been developed in a collaboration of two CEA microelectronics teams from CEA/DTA/LETI/DSYS and CEA/DSM/DAPNIA/SEI, respectively on a standard CMOS AMS process hardened against radiation by lay-out, and on a Silicon On Insulator process (DMILL MHS), the latter being latch-up free. This paper presents the ASIC and polycell architecture as well as experimental results obtained with polycells equipped with AMS ASICs

  17. A pixellated gamma-camera based on CdTe detectors clinical interests and performances

    CERN Document Server

    Chambron, J; Eclancher, B; Scheiber, C; Siffert, P; Hage-Ali, M; Regal, R; Kazandjian, A; Prat, V; Thomas, S; Warren, S; Matz, R; Jahnke, A; Karman, M; Pszota, A; Németh, L

    2000-01-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cmx15 cm detection matrix of 2304 CdTe detector elements, 2.83 mmx2.83 mmx2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the gamma-camera performances. But their use as gamma detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed ...

  18. Polycrystalline CdTe detectors: A luminosity monitor for the LHC

    International Nuclear Information System (INIS)

    Gschwendtner, E.; Placidia, M.; Schmicklera, H.

    2003-01-01

    The luminosity at the four interaction points of the Large Hadron Collider must be continuously monitored in order to provide an adequate tool for the control and optimization of the collision parameters and the beam optics. At both sides of the interaction points absorbers are installed to protect the super-conducting accelerator elements from quenches caused by the deposited energy of collision products. The luminosity detectors will be installed in the copper core of these absorbers to measure the electromagnetic and hadronic showers caused by neutral particles that are produced at the proton-proton collision in the interaction points. The detectors have to withstand extreme radiation levels (108 Gy/yr at the design luminosity) and their long-term operation has to be assured without requiring human intervention. In addition the demand for bunch-by-bunch luminosity measurements, i.e. 40 MHz detection speed, puts severe constraints on the detectors. Polycrystalline CdTe detectors have a high potential to fulfill the requirements and are considered as LHC luminosity monitors. In this paper the interaction region is shown and the characteristics of the CdTe detectors are presented

  19. Effect of visible and UV irradiation on the aggregation stability of CdTe quantum dots

    International Nuclear Information System (INIS)

    Tsipotan, Aleksei S.; Gerasimova, Marina A.; Aleksandrovsky, Aleksandr S.; Zharkov, Sergey M.; Slabko, Vitaliy V.

    2016-01-01

    The possibility of controlling the aggregation stability of CdTe quantum dots (QDs) stabilized by thioglycolic acid (TGA) is important for implementation of quasi-resonant laser-induced self-assembly. This study examines the influence of irradiation by the UV as well as by the visible light on the photostimulated aggregation of QDs. Different photochemical mechanisms are identified, depending on whether light wavelength falls into an interband transition or the first exciton transition. Irradiation by visible light does not lead to changes in the absorption spectra but decreases luminescence intensity through the detachment of TGA and the formation of dangling bonds, leading to the creation of radiativeless relaxation centers. UV irradiation (in the 300–370 nm range), at an intensity of 0.4 W/cm"2, initially (during the first 75 min) leads to the degradation of the stabilizer and QDs’ surface. After 75 min of combined UV and visible light irradiation, a gradual increase in spontaneous aggregation takes place, testifying excessive decrease in stabilizing potential barrier height. Hence, the laser-induced self-assembly of CdTe QDs is recommended to be performed over a time period of between 80 and 100 min after the beginning of low-intensity UV irradiation under conditions equivalent to those applied in this study.

  20. Interaction of different thiol-capped CdTe quantum dots with bovine serum albumin

    International Nuclear Information System (INIS)

    Wang Qisui; Zhang Xiaolei; Zhou Xiaolan; Fang Tingting; Liu Pengfei; Liu Peng; Min Xinmin; Li, Xi

    2012-01-01

    Due to their unique optical properties, quantum dots (QDs) are rapidly revolutionizing many areas of medicine and biology. Despite the remarkable speed of development of nanoscience, relatively little is known about the interaction of nanoscale objects with organism. In this work, interaction of CdTe QDs coated with mercaptopropanoic acid (MPA), L-cysteine (L-cys), and glutathione (GSH) with bovine serum albumin (BSA) was investigated. Fluorescence (FL), UV–vis absorption, and circular dichroism (CD) spectra methods were used. The Stern-Volmer quenching constant (K sv ) at different temperatures, corresponding thermodynamic parameters (ΔH, ΔG and ΔS), and information of the structural features of BSA were gained. We found that QDs can effectively quench the FL of BSA in a ligand-dependent manner, electrostatic interactions play a major role in the binding reaction, and the nature of quenching is static, resulting in forming QDs-BSA complexes. The CD spectra showed that the secondary and tertiary structure of BSA was changed. This study contributes to a better understanding of the ligand effects on QDs-proteins interactions, which is a critical issue for the applications in vivo. - Highlights: ► The interaction between three thiol-capped QDs and BSA by UV–vis, FL, and CD spectra. ► The bio-effect of CdTe QDs on BSA was a ligand-dependent manner. ► The thermodynamic parameters and the structural features of BSA were gained.

  1. Study of the effect of the stress on CdTe nuclear detectors

    Energy Technology Data Exchange (ETDEWEB)

    Ayoub, M.; Radley, I.; Mullins, J. T. [Kromek, Thomas Wright way, TS21 3FD, Sedgefield, County Durham (United Kingdom); Hage-Ali, M. [CLEA, Airport road, Beirut (Lebanon)

    2013-09-14

    CdTe detectors are commonly used for X and γ ray applications. The performance of these detectors is strongly affected by different types of mechanical stress; such as that caused by differential expansion between the semiconductor and its intimate metallic contacts and that caused by applied pressure during the bonding process. The aim of this work was to study the effects of stress on the performance of CdTe detectors. A difference in expansion coefficients induces transverse stress under the metallic contact, while contact pressure induces longitudinal stress. These stresses have been simulated by applying known static pressures. For the longitudinal case, the pressure was applied directly to the metallic contact; while in the transverse case, it was applied to the side. We have studied the effect of longitudinal and transverse stresses on the electrical characteristics including leakage current measurements and γ-ray detection performance. We have also investigated induced defects, their nature, activation energies, cross sections, and concentrations under the applied stress by using photo-induced current transient spectroscopy and thermoelectric effect spectroscopy techniques. The operational stress limit is also given.

  2. Polycrystalline CdTe detectors: A luminosity monitor for the LHC

    Science.gov (United States)

    Gschwendtner, E.; Placidia, M.; Schmicklera, H.

    2003-09-01

    The luminosity at the four interaction points of the Large Hadron Collider must be continuously monitored in order to provide an adequate tool for the control and optimization of the collision parameters and the beam optics. At both sides of the interaction points absorbers are installed to protect the super-conducting accelerator elements from quenches caused by the deposited energy of collision products. The luminosity detectors will be installed in the copper core of these absorbers to measure the electromagnetic and hadronic showers caused by neutral particles that are produced at the proton-proton collision in the interaction points. The detectors have to withstand extreme radiation levels (108 Gy/yr at the design luminosity) and their long-term operation has to be assured without requiring human intervention. In addition the demand for bunch-by-bunch luminosity measurements, i.e. 40 MHz detection speed, puts severe constraints on the detectors. Polycrystalline CdTe detectors have a high potential to fulfill the requirements and are considered as LHC luminosity monitors. In this paper the interaction region is shown and the characteristics of the CdTe detectors are presented.

  3. Highly fluorescent CdTe quantum dots with reduced cytotoxicity-A Robust biomarker

    Directory of Open Access Journals (Sweden)

    Jandi Kim

    2015-03-01

    Full Text Available l-Cysteine (Cys capped CdTe quantum dots (CdTe@Cys QDs were successfully synthesized in an aqueous medium. The synthesized CdTe@Cys samples were analyzed using Fourier transform infrared (FT-IR spectroscopy, fluorescence (FL spectroscopy, transmission electron microscopy (TEM, confocal microscopy and subsequently subjected to the antibacterial test. Systematic investigations were carried out for the determination of optimal conditions namely the ratios of Cd:Te, CdTe:Cys, pH value and the chemical stability of CdTe@Cys. Moreover, the reactivation of FL intensity in the CdTe@Cys sample was done easily by the addendum of Cys. The introduction of additional cysteine to the CdTe@Cys QDs sample showed an enhancement in terms of the FL intensity and stability along with the reduced antibacterial activity. This was further confirmed through Thiazolyl blue tetrazolium bromide (MTT assays. Both the result of the bio-stability tests namely the antibacterial test and MTT assay displayed similarities between the externally added Cys and cytotoxicity of the bacteria and human HeLa cancer cell lines. Confocal microscopic images were captured for the CdTe@Cys conjugated Escherichia coli.

  4. Effect of visible and UV irradiation on the aggregation stability of CdTe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Tsipotan, Aleksei S.; Gerasimova, Marina A.; Aleksandrovsky, Aleksandr S., E-mail: aleksandrovsky@kirensky.ru; Zharkov, Sergey M.; Slabko, Vitaliy V. [Siberian Federal University (Russian Federation)

    2016-11-15

    The possibility of controlling the aggregation stability of CdTe quantum dots (QDs) stabilized by thioglycolic acid (TGA) is important for implementation of quasi-resonant laser-induced self-assembly. This study examines the influence of irradiation by the UV as well as by the visible light on the photostimulated aggregation of QDs. Different photochemical mechanisms are identified, depending on whether light wavelength falls into an interband transition or the first exciton transition. Irradiation by visible light does not lead to changes in the absorption spectra but decreases luminescence intensity through the detachment of TGA and the formation of dangling bonds, leading to the creation of radiativeless relaxation centers. UV irradiation (in the 300–370 nm range), at an intensity of 0.4 W/cm{sup 2}, initially (during the first 75 min) leads to the degradation of the stabilizer and QDs’ surface. After 75 min of combined UV and visible light irradiation, a gradual increase in spontaneous aggregation takes place, testifying excessive decrease in stabilizing potential barrier height. Hence, the laser-induced self-assembly of CdTe QDs is recommended to be performed over a time period of between 80 and 100 min after the beginning of low-intensity UV irradiation under conditions equivalent to those applied in this study.

  5. Caliste 64, an innovative CdTe hard X-ray micro-camera

    International Nuclear Information System (INIS)

    Meuris, A.; Limousin, O.; Pinsard, F.; Le Mer, I.; Lugiez, F.; Gevin, O.; Delagnes, E.; Vassal, M.C.; Soufflet, F.; Bocage, R.

    2008-01-01

    A prototype 64 pixel miniature camera has been designed and tested for the Simbol-X hard X-ray observatory to be flown on the joint CNES-ASI space mission in 2014. This device is called Caliste 64. It is a high performance spectro-imager with event time-tagging capability, able to detect photons between 2 keV and 250 keV. Caliste 64 is the assembly of a 1 or 2 min thick CdTe detector mounted on top of a readout module. CdTe detectors equipped with Aluminum Schottky barrier contacts are used because of their very low dark current and excellent spectroscopic performance. Front-end electronics is a stack of four IDeF-X V1.1 ASICs, arranged perpendicular to the detection plane, to read out each pixel independently. The whole camera fits in a 10 * 10 * 20 mm 3 volume and is juxtaposable on its four sides. This allows the device to be used as an elementary unit in a larger array of Caliste 64 cameras. Noise performance resulted in an ENC better than 60 electrons rms in average. The first prototype camera is tested at -10 degrees C with a bias of -400 V. The spectrum summed across the 64 pixels results in a resolution of 697 eV FWHM at 13.9 keV and 808 eV FWFM at 59.54 keV. (authors)

  6. CdTe Based Hard X-ray Imager Technology For Space Borne Missions

    Science.gov (United States)

    Limousin, Olivier; Delagnes, E.; Laurent, P.; Lugiez, F.; Gevin, O.; Meuris, A.

    2009-01-01

    CEA Saclay has recently developed an innovative technology for CdTe based Pixelated Hard X-Ray Imagers with high spectral performance and high timing resolution for efficient background rejection when the camera is coupled to an active veto shield. This development has been done in a R&D program supported by CNES (French National Space Agency) and has been optimized towards the Simbol-X mission requirements. In the latter telescope, the hard X-Ray imager is 64 cm² and is equipped with 625µm pitch pixels (16384 independent channels) operating at -40°C in the range of 4 to 80 keV. The camera we demonstrate in this paper consists of a mosaic of 64 independent cameras, divided in 8 independent sectors. Each elementary detection unit, called Caliste, is the hybridization of a 256-pixel Cadmium Telluride (CdTe) detector with full custom front-end electronics into a unique 1 cm² component, juxtaposable on its four sides. Recently, promising results have been obtained from the first micro-camera prototypes called Caliste 64 and will be presented to illustrate the capabilities of the device as well as the expected performance of an instrument based on it. The modular design of Caliste enables to consider extended developments toward IXO type mission, according to its specific scientific requirements.

  7. Caliste 64, an innovative CdTe hard X-ray micro-camera

    Energy Technology Data Exchange (ETDEWEB)

    Meuris, A.; Limousin, O.; Pinsard, F.; Le Mer, I. [CEA Saclay, DSM, DAPNIA, Serv. Astrophys., F-91191 Gif sur Yvette (France); Lugiez, F.; Gevin, O.; Delagnes, E. [CEA Saclay, DSM, DAPNIA, Serv. Electron., F-91191 Gif sur Yvette (France); Vassal, M.C.; Soufflet, F.; Bocage, R. [3D-plus Company, F-78532 Buc (France)

    2008-07-01

    A prototype 64 pixel miniature camera has been designed and tested for the Simbol-X hard X-ray observatory to be flown on the joint CNES-ASI space mission in 2014. This device is called Caliste 64. It is a high performance spectro-imager with event time-tagging capability, able to detect photons between 2 keV and 250 keV. Caliste 64 is the assembly of a 1 or 2 min thick CdTe detector mounted on top of a readout module. CdTe detectors equipped with Aluminum Schottky barrier contacts are used because of their very low dark current and excellent spectroscopic performance. Front-end electronics is a stack of four IDeF-X V1.1 ASICs, arranged perpendicular to the detection plane, to read out each pixel independently. The whole camera fits in a 10 * 10 * 20 mm{sup 3} volume and is juxtaposable on its four sides. This allows the device to be used as an elementary unit in a larger array of Caliste 64 cameras. Noise performance resulted in an ENC better than 60 electrons rms in average. The first prototype camera is tested at -10 degrees C with a bias of -400 V. The spectrum summed across the 64 pixels results in a resolution of 697 eV FWHM at 13.9 keV and 808 eV FWFM at 59.54 keV. (authors)

  8. Characterization inconsistencies in CdTe and CZT gamma-ray detectors

    International Nuclear Information System (INIS)

    Lavietes, A.D.; McQuaid, J.H.

    1994-10-01

    In the past few years, significant developments in cadmium telluride (CdTe) and cadmium zinc telluride (CZT) semiconductor materials have taken place with respect to both quality and yield. Many of the more recent developments have occurred in the area of CZT crystal growth. This has resulted in an explosion of interest in the use of these materials in ambient temperature gamma-ray detectors. Most, if not all, of the manufacturers of CdTe and CZT have acquired government funding to continue research in development and applications, indicating the importance of these improvements in material quality. We have examined many detectors, along with the accompanying manufacturer's data, and it has become apparent that a clear standard does not exist by which each manufacturer characterizes the performance of their material. Result is a wide variety of performance claims that have no basis for comparison and normally cannot be readily reproduced. This paper first supports our observations and then proposes a standard that all manufacturers and users of these materials may use for characterization

  9. Study of the effect of the stress on CdTe nuclear detectors

    International Nuclear Information System (INIS)

    Ayoub, M.; Radley, I.; Mullins, J. T.; Hage-Ali, M.

    2013-01-01

    CdTe detectors are commonly used for X and γ ray applications. The performance of these detectors is strongly affected by different types of mechanical stress; such as that caused by differential expansion between the semiconductor and its intimate metallic contacts and that caused by applied pressure during the bonding process. The aim of this work was to study the effects of stress on the performance of CdTe detectors. A difference in expansion coefficients induces transverse stress under the metallic contact, while contact pressure induces longitudinal stress. These stresses have been simulated by applying known static pressures. For the longitudinal case, the pressure was applied directly to the metallic contact; while in the transverse case, it was applied to the side. We have studied the effect of longitudinal and transverse stresses on the electrical characteristics including leakage current measurements and γ-ray detection performance. We have also investigated induced defects, their nature, activation energies, cross sections, and concentrations under the applied stress by using photo-induced current transient spectroscopy and thermoelectric effect spectroscopy techniques. The operational stress limit is also given

  10. Study of CdTe and HgCdTe thin films obtained by electrochemical methods

    International Nuclear Information System (INIS)

    Guillen, C.

    1990-01-01

    Cadmium telluride polycrystalline thin films were fabricated on SnO 2 -coated glass substrates by potentiostatic electrodeposition and characterized by X-ray diffraction, energy dispersive X-ray analyses (EDAX), optical and electrical measurements. The films dseposited at potentials more positive than -0.65 V vs.SCE were p-type but those deposited at more negative potentials were n-type. All CdTe thin films showed a band-gap energy about 1.45 eV and a large absorption coeffici-ent (a=10 5 cm -1 ) above de band edge. The addition of even small amounts of mercury to the CdTe produces higuer conductivity values and lower band-gap energies. We have prepared HgCdTe thin films where the band-gap energies ranged between 0.93 and 0.88 eV depending on the ratio of mercury to cadmium. Heat treatment at 300 0 C increases the crystalline diameter and alter the composition of the electrodeposited films, a decrease of the resistivity values was also observed. (Author)

  11. New developments in clinical applications of CdTe and CdZnTe detectors

    International Nuclear Information System (INIS)

    Scheiber, C.

    1996-01-01

    This review about the medical applications of CdTe and CdZnTe is an update on the 1992 paper (1992). This new paper is legitimized by the recent progress which has been made in this field. First of all, the usefulness of a new material, i.e. CdZnTe, has been demonstrated. While the two materials are still being improved, it seems as yet too early to debate which of CdTe:Cl or CdZnTe will be the best choice. Historical applications span over the past 18 years, involving devices like miniature probes for per-operative scintigraphy or the monitoring of physiological functions and, closer to us, appliances dedicated to bone densitometry, and have been expanding as such devices have become commercially available, for many years now. Newly available microelectronic circuitry allows 2D-arrays to be built for digital quantitative X-ray (chest, dental..) and for high-resolution gamma cameras. The clinical demand is very high, especially in the field of nuclear medicine. Although there already exist clinical demonstrators, the future of such CdTe applications depends on further reduction in material and device mounting costs. New perspectives concern XCT applications, but the data resulting from research work are kept for restricted use within industrial R and D laboratories. (orig.)

  12. p-type doping efficiency in CdTe: Influence of second phase formation

    Science.gov (United States)

    McCoy, Jedidiah J.; Swain, Santosh K.; Sieber, John R.; Diercks, David R.; Gorman, Brian P.; Lynn, Kelvin G.

    2018-04-01

    Cadmium telluride (CdTe) high purity, bulk, crystal ingots doped with phosphorus were grown by the vertical Bridgman melt growth technique to understand and improve dopant solubility and activation. Large net carrier densities have been reproducibly obtained from as-grown ingots, indicating successful incorporation of dopants into the lattice. However, net carrier density values are orders of magnitude lower than the solubility of P in CdTe as reported in literature, 1018/cm3 to 1019/cm3 [J. H. Greenberg, J. Cryst. Growth 161, 1-11 (1996) and R. B. Hall and H. H. Woodbury, J. Appl. Phys. 39(12), 5361-5365 (1968)], despite comparable starting charge dopant densities. Growth conditions, such as melt stoichiometry and post growth cooling, are shown to have significant impacts on dopant solubility. This study demonstrates that a significant portion of the dopant becomes incorporated into second phase defects as compounds of cadmium and phosphorous, such as cadmium phosphide, which inhibits dopant incorporation into the lattice and limits maximum attainable net carrier density in bulk crystals. Here, we present an extensive study on the characteristics of these second phase defects in relation to their composition and formation kinetics while providing a pathway to minimize their formation and enhance solubility.

  13. Charge-carrier transport and recombination in heteroepitaxial CdTe

    International Nuclear Information System (INIS)

    Kuciauskas, Darius; Farrell, Stuart; Dippo, Pat; Moseley, John; Moutinho, Helio; Li, Jian V.; Allende Motz, A. M.; Kanevce, Ana; Zaunbrecher, Katherine; Gessert, Timothy A.; Levi, Dean H.; Metzger, Wyatt K.; Colegrove, Eric; Sivananthan, S.

    2014-01-01

    We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and nonlinear two-photon excitation, we assess surface, interface, and bulk recombination. Two-photon excitation with a focused laser beam enables characterization of recombination velocity at the buried epilayer/substrate interface, 17.5 μm from the sample surface. Measurements with a focused two-photon excitation beam also indicate a fast diffusion component, from which we estimate an electron mobility of 650 cm 2 (Vs) −1 and diffusion coefficient D of 17 cm 2  s −1 . We find limiting recombination at the epitaxial film surface (surface recombination velocity S surface  = (2.8 ± 0.3) × 10 5  cm s −1 ) and at the heteroepitaxial interface (interface recombination velocity S interface  = (4.8 ± 0.5) × 10 5  cm s −1 ). The results demonstrate that reducing surface and interface recombination velocity is critical for photovoltaic solar cells and electronic devices that employ epitaxial CdTe.

  14. Enhancement in microstructural and optoelectrical properties of thermally evaporated CdTe films for solar cells

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2018-03-01

    The optimization of microstructural and optoelectrical properties of a thin layer is an important step prior device fabrication process, so an enhancement in these properties of thermally evaporated CdTe thin films is reported in this communication. The films having thickness 450 nm and 850 nm were deposited on thoroughly cleaned glass and indium tin oxide (ITO) substrates followed by annealing at 450 °C in air atmosphere. These films were characterized for microstructural and optoelectrical properties employing X-ray diffraction, scanning electron microscopy coupled with energy-dispersive spectroscopy, UV-Vis spectrophotometer and source meter. The films found to be have zinc-blende cubic structure with preferred reflection (111) while the crystallographic parameters and direct energy band gap are strongly influenced by the film thickness. The surface morphology studies show that the films are uniform, smooth, homogeneous and nearly dense-packed as well as free from voids and pitfalls as where elemental analysis revealed the presence of Cd and Te element in the deposited films. The electrical analysis showed linear behavior of current with voltage while conductivity is decreased for higher thickness. The results show that the microstructural and optoelectrical properties of CdTe thin layer could be enhanced by varying thickness and films having higher thickness might be processed as promising absorber thin layer to the CdTe-based solar cells.

  15. Effects of CdCl2 on the growth of CdTe on CdS films for solar cells by isothermal close-spaced vapor transport

    International Nuclear Information System (INIS)

    Vaccaro, P.O.; Meyer, G.O.; Saura, J.

    1991-01-01

    CdS/CdTe solar cells were made by depositing CdTe films by an isothermal close-spaced vapor transport method on sintered CdS/glass substrates. The influence of amounts of CdCl2 ranging from 0 wt% to 8 wt% in the CdTe source on the solar cells performance was studied. Increasing the CdCl2 content enhances the CdTe grainsize but degrades the spectral response and increases the reverse saturation current. An optimal CdCl2 concentration of 1 wt% was found for a growth temperature of 620 deg C. (Author)

  16. A novel strategy to evaluate the degradation of quantum dots: identification and quantification of CdTe quantum dots and corresponding ionic species by CZE-ICP-MS.

    Science.gov (United States)

    Meng, Peijun; Xiong, Yamin; Wu, Yingting; Hu, Yue; Wang, Hui; Pang, Yuanfeng; Jiang, Shuqing; Han, Sihai; Huang, Peili

    2018-05-09

    In view of the significance and urgency of the speciation analysis of quantum dots (QDs) and their degradation products for clarifying their degradation rules and toxicity mechanisms, a method for the identification and quantification of CdTe QDs and corresponding ionic species in complex matrices was developed using capillary zone electrophoresis (CZE) coupled to inductively coupled plasma-mass spectrometry (ICP-MS). The quality assessment of commercial CdTe QDs and serum pharmacokinetics of synthesized CdTe QDs in rats were successfully undertaken using the developed CZE-ICP-MS method.

  17. CdTe magic-sized clusters and the use as building blocks for assembling two-dimensional nanoplatelets

    Science.gov (United States)

    Xu, Hu; Hou, Yumei; Zhang, Hua

    2017-06-01

    A facile one-pot noninjection synthesis of CdTe magic-sized clusters (MSCs) and their use as building blocks for assembling two-dimensional (2D) quantum confined nanoplatelets (NPLs) are reported. Four distinct MSC families, with the first exciton absorption peaks at 447 nm (F447), 485 nm (F485), 535 nm (F535), and 555 nm (F555), are synthesized by the reaction between cadmium oleate and trioctylphosphine tellurium (TOP-Te) in octadecene media containing primary amine and TOP at appropriate intermediate temperatures. Especially, F447 is obtained in pure form and can self-assemble in situ into 2D NPLs in the reaction solution. The formation, growth, and transformation of CdTe MSCs are monitored mainly by UV-Vis absorption spectroscopy. The pure F447 and its assembled 2D NPLs are further characterized using transmission electron microscopy. The influence of various experimental variables, including reaction temperature, the nature, and amount of capping ligands, on the stability and growth kinetics of the obtained MSC families has been systematically investigated. Experimental results indicate that the appropriate reaction temperature and the presence of long hydrocarbon chain primary amines play a crucial role in the formation of MSCs and the subsequent assembly into 2D NPLs. Primary amines can also promote ultra-small sized CdTe regular nanocrystals to transform into MSCs, and therefore, CdTe MSCs can be obtained indirectly from regularly sized nanocrystals. [Figure not available: see fulltext.

  18. Growth and characterization of CdTe absorbers on GaAs by MBE for high concentration PV solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ari, Ozan; Polat, Mustafa; Selamet, Yusuf [Department of Physics, Izmir Institute of Technology, Izmir 35430 (Turkey); Karakaya, Merve [Department of Material Science and Engineering, Izmir Institute of Technology, Izmir 35430 (Turkey)

    2015-11-15

    CdTe based II-VI absorbers are promising candidates for high concentration PV solar cells with an ideal band gap for AM1.5 solar radiation. In this study, we propose single crystal CdTe absorbers grown on GaAs substrates with a molecular beam epitaxy (MBE) which is a clean deposition technology. We show that high quality CdTe absorber layers can be grown with full width half maximum of X-ray diffraction rocking curves (XRD RC) as low as 227 arc-seconds with 0.5% thickness uniformity that a 2 μm layer is capable of absorbing 99% of AM1.5 solar radiation. Bandgap of the CdTe absorber is found as 1.483 eV from spetroscopic ellipsometry (SE) measurements. Also, high absorption coefficient is calculated from the results, which is ∝5 x 10{sup 5}cm{sup -1} in solar radiation spectrum. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Synthesis of CdTe QDs/single-walled aluminosilicate nanotubes hybrid compound and their antimicrobial activity on bacteria

    Science.gov (United States)

    Geraldo, Daniela A.; Arancibia-Miranda, Nicolás; Villagra, Nicolás A.; Mora, Guido C.; Arratia-Perez, Ramiro

    2012-12-01

    The use of molecular conjugates of quantum dots (nanocrystalline fluorophores) for biological purposes have received much attention due to their improved biological activity. However, relatively, little is known about the synthesis and application of aluminosilicate nanotubes decorated with quantum dots (QDs) for imaging and treatment of pathogenic bacteria. This paper describes for a first time, the use of single-walled aluminosilicate nanotubes (SWNT) (imogolite) as a one-dimensional template for the in situ growth of mercaptopropionic acid-capped CdTe QDs. This new nanohybrid hydrogel was synthesized by a simple reaction pathway and their enhanced optical properties were monitored by fluorescence and UV-Vis spectroscopy, confirming that the use of these nanotubes favors the confinement effects of net CdTe QDs. In addition, studies of FT-IR spectroscopy and transmission electron microscopy confirmed the non-covalent functionalization of SWNT. Finally, the antimicrobial activity of SWNT coated with CdTe QDs toward three opportunistic multi-resistant pathogens such as Salmonella typhimurium, Acinetobacter baumannii, and Pseudomonas aeruginosa were tested. Growth inhibition tests were conducted by exposing growing bacteria to CdTe QDs/SWNT hybrid compound showing that the new nano-structured composite is a potential antimicrobial agent for heavy metal-resistant bacteria.

  20. A facile single injection Hydrothermal method for the synthesis of thiol capped CdTe Quantum dots as light harvesters

    Energy Technology Data Exchange (ETDEWEB)

    Jai Kumar, B.; Sumanth Kumar, D.; Mahesh, H.M., E-mail: hm_mahesh@rediffmail.com

    2016-10-15

    A facile, Single Injection Hydrothermal (SIH) method has been developed to synthesize high quality 3-Mercaptopropionic Acid (MPA) stabilized aqueous CdTe QDs, entirely in ambient environment. The synthesis protocol eliminates the use of inert atmosphere for reducing elemental Tellurium powder to Te precursor avoiding the oxidation of Te powder. The XRD result revealed that the synthesized QDs are in cubic zincblende type crystalline structure, without signature of Te oxidation. FTIR spectra have confirmed the attachment of short chained organic compound MPA to the surface of QDs by covalent bond. The Quantum confinement effect was clearly evident by shift in Longitudinal Optic (LO) peak of Raman spectra and absorption peak wavelength with respect to bulk CdTe materials. The optical direct band gap energy of CdTe QDs is between 3.63 eV to 1.96 eV and QDs size below 6 nm, confirm the QDs are well under strong Quantum confinement regime. Also, photoluminescence spectra depict a stable and high luminescence emission from green to dark red color. All these results corroborate that the synthesis of CdTe QDs procedure is very advantageous and present a simple, economical and easily up scalable method for large scale production.

  1. Development of MoOx thin films as back contact buffer for CdTe solar cells in substrate configuration

    International Nuclear Information System (INIS)

    Gretener, C.; Perrenoud, J.; Kranz, L.; Baechler, C.; Yoon, S.; Romanyuk, Y.E.; Buecheler, S.; Tiwari, A.N.

    2013-01-01

    Molybdenum oxide compounds exhibit unique electrical and optical properties depending on oxygen vacancy concentration and composition and therefore, have recently attracted a lot of attention as a hole transport layer in various devices. In this work CdTe solar cells in substrate configuration were grown with evaporated MoO x back contact buffer layers and efficiencies of up to 10% could be achieved without using Cu in the back contact processing. The buffer layer – at the CdTe/back contact interface – in the finished cell was found to consist of MoO 2 phase instead of the expected MoO 3 phase as observed in as-deposited or annealed MoO x layers without CdTe deposition. In order to obtain MoO x buffer layers with desired stoichiometry, MoO x thin films were deposited by radio-frequency sputtering under different growth conditions. The chemical phase, composition, microstructure and optical properties of such layers were studied for their possible use in CdTe solar cells. - Highlights: ► MoO x is used as a back contact buffer in CdTe solar cells in substrate configuration. ► Efficiency of 10.0% was achieved without the addition of Cu. ► The back contact buffer in the finished device consists only of MoO 2 . ► Phases and microstructure of MoO x can be controlled by sputtering conditions

  2. Synthesis of CdTe QDs/single-walled aluminosilicate nanotubes hybrid compound and their antimicrobial activity on bacteria

    Energy Technology Data Exchange (ETDEWEB)

    Geraldo, Daniela A., E-mail: daniela.geraldo@unab.cl [Universidad Andres Bello, Departamento de Ciencias Quimicas (Chile); Arancibia-Miranda, Nicolas [CEDENNA, Center for the Development of Nanoscience and Nanotechnology (Chile); Villagra, Nicolas A. [Universidad Andres Bello, Laboratorio de Microbiologia, Facultad de Ciencias Biologicas (Chile); Mora, Guido C. [Universidad Andres Bello, Unidad de Microbiologia, Facultad de Medicina (Chile); Arratia-Perez, Ramiro [Universidad Andres Bello, Departamento de Ciencias Quimicas (Chile)

    2012-12-15

    The use of molecular conjugates of quantum dots (nanocrystalline fluorophores) for biological purposes have received much attention due to their improved biological activity. However, relatively, little is known about the synthesis and application of aluminosilicate nanotubes decorated with quantum dots (QDs) for imaging and treatment of pathogenic bacteria. This paper describes for a first time, the use of single-walled aluminosilicate nanotubes (SWNT) (imogolite) as a one-dimensional template for the in situ growth of mercaptopropionic acid-capped CdTe QDs. This new nanohybrid hydrogel was synthesized by a simple reaction pathway and their enhanced optical properties were monitored by fluorescence and UV-Vis spectroscopy, confirming that the use of these nanotubes favors the confinement effects of net CdTe QDs. In addition, studies of FT-IR spectroscopy and transmission electron microscopy confirmed the non-covalent functionalization of SWNT. Finally, the antimicrobial activity of SWNT coated with CdTe QDs toward three opportunistic multi-resistant pathogens such as Salmonella typhimurium, Acinetobacter baumannii, and Pseudomonas aeruginosa were tested. Growth inhibition tests were conducted by exposing growing bacteria to CdTe QDs/SWNT hybrid compound showing that the new nano-structured composite is a potential antimicrobial agent for heavy metal-resistant bacteria.

  3. Synthesis of CdTe QDs/single-walled aluminosilicate nanotubes hybrid compound and their antimicrobial activity on bacteria

    International Nuclear Information System (INIS)

    Geraldo, Daniela A.; Arancibia-Miranda, Nicolás; Villagra, Nicolás A.; Mora, Guido C.; Arratia-Perez, Ramiro

    2012-01-01

    The use of molecular conjugates of quantum dots (nanocrystalline fluorophores) for biological purposes have received much attention due to their improved biological activity. However, relatively, little is known about the synthesis and application of aluminosilicate nanotubes decorated with quantum dots (QDs) for imaging and treatment of pathogenic bacteria. This paper describes for a first time, the use of single-walled aluminosilicate nanotubes (SWNT) (imogolite) as a one-dimensional template for the in situ growth of mercaptopropionic acid-capped CdTe QDs. This new nanohybrid hydrogel was synthesized by a simple reaction pathway and their enhanced optical properties were monitored by fluorescence and UV–Vis spectroscopy, confirming that the use of these nanotubes favors the confinement effects of net CdTe QDs. In addition, studies of FT-IR spectroscopy and transmission electron microscopy confirmed the non-covalent functionalization of SWNT. Finally, the antimicrobial activity of SWNT coated with CdTe QDs toward three opportunistic multi-resistant pathogens such as Salmonella typhimurium, Acinetobacter baumannii, and Pseudomonas aeruginosa were tested. Growth inhibition tests were conducted by exposing growing bacteria to CdTe QDs/SWNT hybrid compound showing that the new nano-structured composite is a potential antimicrobial agent for heavy metal-resistant bacteria.

  4. Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

    Energy Technology Data Exchange (ETDEWEB)

    Ananthakumar, S. [Crystal Growth Centre, Anna University, Chennai 600025 (India); Jayabalan, J., E-mail: jjaya@rrcat.gov.in [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Singh, Asha; Khan, Salahuddin [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Babu, S. Moorthy [Crystal Growth Centre, Anna University, Chennai 600025 (India); Chari, Rama [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2016-01-15

    The photoluminescence (PL) from semiconductor quantum dots can show a “PL bright point”, that is the PL from as prepared quantum dots is maximum at a particular size. In this work we show that, for CdTe quantum dots, upconversion photoluminescence (UCPL) originating from nonlinear absorption shows a similar “UCPL bright point”. The PL and UCPL bright points occur at nearly the same size. The existence of a UCPL bright point has important implications for upconversion microscopy applications. - Highlights: • The size dependence of the upconversion photoluminescence (UCPL) spectrum of CdTe quantum dots has been reported. • We show that the UCPL from the CdTe quantum dots is highest at a particular size. • Thus the occurrence of a 'UCPL bright point' in CdTe quantum dots has been demonstrated. • It has been shown that the UCPL bright point occurs at nearly the same size as a normal bright point.

  5. Fluorescence-tagged metallothionein with CdTe quantum dots analyzed by the chip-CE technique

    Energy Technology Data Exchange (ETDEWEB)

    Guszpit, Ewelina, E-mail: ewelina.guszpit@gmail.com [Wroclaw Medical University, Department of Biomedical and Environmental Analysis, Faculty of Pharmacy (Poland); Krizkova, Sona [Mendel University in Brno, Department of Chemistry and Biochemistry, Faculty of Agronomy (Czech Republic); Kepinska, Marta [Wroclaw Medical University, Department of Biomedical and Environmental Analysis, Faculty of Pharmacy (Poland); Rodrigo, Miguel Angel Merlos [Mendel University in Brno, Department of Chemistry and Biochemistry, Faculty of Agronomy (Czech Republic); Milnerowicz, Halina [Wroclaw Medical University, Department of Biomedical and Environmental Analysis, Faculty of Pharmacy (Poland); Kopel, Pavel; Kizek, Rene [Mendel University in Brno, Department of Chemistry and Biochemistry, Faculty of Agronomy (Czech Republic)

    2015-11-15

    Quantum dots (QDs) are fluorescence nanoparticles (NPs) with unique optic properties which allow their use as probes in chemical, biological, immunological, and molecular imaging. QDs linked with target ligands such as peptides or small molecules can be used as tumor biomarkers. These particles are a promising tool for selective, fast, and sensitive tagging and imaging in medicine. In this study, an attempt was made to use QDs as a marker for human metallothionein (MT) isoforms 1 and 2. Four kinds of CdTe QDs of different sizes bioconjugated with MT were analyzed using the chip-CE technique. Based on the results, it can be concluded that MT is willing to interact with QDs, and the chip-CE technique enables the observation of their complexes. It was also observed that changes ranging roughly 6–7 kDa, a value corresponding to the MT monomer, depend on the hydrodynamic diameters of QDs; also, the MT sample without cadmium interacted stronger with QDs than MT saturated with cadmium. Results show that MT is willing to interact with smaller QDs (blue CdTe) rather than larger ones QDs (red CdTe). To our knowledge, chip-CE has not previously been applied in the study of CdTe QDs interaction with MT.Graphical Abstract.

  6. Fluorescence-tagged metallothionein with CdTe quantum dots analyzed by the chip-CE technique

    International Nuclear Information System (INIS)

    Guszpit, Ewelina; Krizkova, Sona; Kepinska, Marta; Rodrigo, Miguel Angel Merlos; Milnerowicz, Halina; Kopel, Pavel; Kizek, Rene

    2015-01-01

    Quantum dots (QDs) are fluorescence nanoparticles (NPs) with unique optic properties which allow their use as probes in chemical, biological, immunological, and molecular imaging. QDs linked with target ligands such as peptides or small molecules can be used as tumor biomarkers. These particles are a promising tool for selective, fast, and sensitive tagging and imaging in medicine. In this study, an attempt was made to use QDs as a marker for human metallothionein (MT) isoforms 1 and 2. Four kinds of CdTe QDs of different sizes bioconjugated with MT were analyzed using the chip-CE technique. Based on the results, it can be concluded that MT is willing to interact with QDs, and the chip-CE technique enables the observation of their complexes. It was also observed that changes ranging roughly 6–7 kDa, a value corresponding to the MT monomer, depend on the hydrodynamic diameters of QDs; also, the MT sample without cadmium interacted stronger with QDs than MT saturated with cadmium. Results show that MT is willing to interact with smaller QDs (blue CdTe) rather than larger ones QDs (red CdTe). To our knowledge, chip-CE has not previously been applied in the study of CdTe QDs interaction with MT.Graphical Abstract

  7. Applicability of a portable CdTe and NaI (Tl) spectrometer for activity measure

    International Nuclear Information System (INIS)

    Fernandes, Jaquiel Salvi

    2005-02-01

    In this work it was studied the application of an in situ gamma spectrometer (ROVER) of Amptek Inc., composed by a Cadmium Telluride detector (CdTe) of 3 mm x 3 mm x 1 mm and a 30 mm x 30 mm Sodium Iodide detector doped with Thallium [NaI (Tl)). The radioactive sources used were type pastille, sealed in aluminum and polyethylene, of 241 Am, 133 Ba, 152 Eu, 3 sources of 137 Cs and soil samples contaminated with 137 Cs. It was performed a factorial planning 2 3 to optimize the in situ spectrometry system. This way it was determined that the best temperature for CdTe crystal operation is -22, deg C, with Shaping Time of 3 μS and Rise Time Discrimination (RTD) with value 3. With the help of the certified radioactive sources, we determined the efficiency curve of the two detectors. The CdTe detector was positioned at the standard distance of 1 meter of the sources and also at 4.15 cm. The NaI (Tl) detector was also positioned at the standard distance of 1 meter of the sources and at 2.8 cm. Measures were performed to determine the Minimum Detectable Activity (MDA) for both detectors. For the pastille type sources, the 137 Cs MDA for the CdTe detector at 4.15 cm, analyzing the energy line of 32 keV, was 6 kBq and at 1 meter of the 137 Cs source, analyzing the line of 661.65 keV, the MDA was 67 kBq. For soil samples, CdTe detector at 4.15 cm presented a MDA of 693 kBq.kg-l for the line of 32 keV, and for the soil sample 7 Be content the MDA found was 2867 Bq.kg -1 at 4.15 cm. For the NaI (Tl) detector, analyzing the line of 661.65 keV, the 137 Cs MDA for pastille type source at 1 meter of distance was 7 kBq, and for soil sample at 2.8 cm the measured 137 Cs MDA was 71 Bq.kg -1 . For the soil sample 7 Be content, at 2.8 cm of the Nal (Tl) detector, the obtained MDA was 91 Bq.kg -1 . Due to the minimum detectable activities found for the two detectors, we concluded that the employed in situ gamma ray spectrometer system allows the quantification of 137 Cs and 7 Be

  8. Diffusion and influence of Cu on properties of CdTe thin films and CdTe/CdS cells

    Energy Technology Data Exchange (ETDEWEB)

    Dzhafarov, T.D.; Yesilkaya, S.S.; Yilmaz Canli, N.; Caliskan, M. [Department of Physics, Yildiz Technical University, Davutpasa, 34210 Istanbul (Turkey)

    2005-01-31

    The effective diffusion coefficients of Cu for thermal and photodiffusion in the CdTe films have been estimated from resistivity versus duration of thermal or photoannealing curves. In the temperature range 60-200{sup o}C the effective coefficient of thermal diffusion (D{sub t}) and photodiffusion (D{sub ph}) are described as D{sub t}=7.3x10{sup -7}exp(-0.33/kT) and D{sub ph}=4.7x10{sup -8}exp(-0.20/kT). It is found that the diffusion doping of CdTe thin films by Cu at 400{sup o}C results in a sharp decrease of resistivity up to 7 orders of magnitude of p-type material, depending on thickness of Cu film. The comparative study of performance of CdTe(Cu)/CdS and CdTe/CdS cells has been studied. It is shown that the diffusion doping of CdTe film by Cu increases efficiency of CdTe(Cu)/CdS cells from 0.9% to 6.8%. The degradation of photovoltaic parameters of CdTe(Cu)/CdS cell, during testing under forward and reverse bias at room temperature, proceeds at a larger rate than those of CdTe/CdS cell without Cu. The degradation of performance of CdTe(Cu)/CdS cells is tentatively assigned to electrodiffusion of Cu in CdTe, resulting in redistribution of concentration of Cu-related centers in CdTe film and heterojunction region.

  9. Ablation of CdTe with 100 μs Nd:YAG laser pulses: dependence on target preparation method

    International Nuclear Information System (INIS)

    Rzeszutek, J.; Savchuk, V.; Oszwaldowski, M.

    2008-01-01

    The results of experimental studies of the ablation of CdTe with a pulsed Nd:YAG laser (wavelength 1064 nm) performed with 100 μs pulses and repetition time of 35 Hz are presented for the pulse energy range from 0.13 to 0.25 J. The main goal is to elucidate the dependence of the ablation process on the target preparation method. The investigation of the vapour stream intensity and chemical composition and their evolution with time are performed with a quadrupole mass spectrometer synchronized with the laser pulses. These studies are performed for three kinds of targets: a target made of CdTe bulk crystal (BC target), a target made of CdTe fine powder pressed under the pressure of 700 atm (PP target), and a target made of loose CdTe powder (N-PP target). The applicability of these targets for obtaining high quality CdTe thin films is determined. The best chemical composition of the vapour stream can be obtained with the BC target. A major drawback of this target is the energetic threshold for ablation with Nd:YAG laser and resulting delay in the ablation process above the threshold. The advantage of powder targets over BC target is the lack of any ablation threshold or delay. Weaker angular dependence of the particle emission (associated with the surface roughness), if confirmed in further experiments, can be the most important advantage of PP and N-PP targets. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Study and development of new CdTe and CdZnTe detection structures for X and γ imagery

    International Nuclear Information System (INIS)

    Rosaz, M.

    1997-01-01

    The aim of this study is to show the interest of applying cadmium telluride (CdTe) for X- and γ- ray imaging applications, with specific technological (via contact nature) and geometric (via Frisch grids) structures suited for each application. This work is divided into three different but complementary parts: the first part describes a simulation model which allows a better understanding of CdTe based γ- ray detectors. The new feature of this model compared to previous ones, is that it is able to take into account the electric field's non uniform spatial distribution inside the detector s. The results enable us to de-convolute the influence of material and contact parameters on the spectrometric performances (energy resolution and peak/valley ratio) of CdTe based detectors; the second part presents different technological structures deposited upon CdTe, (grown by two different methods, i.e Bridgman and High Pressure Bridgman). These structures were characterised in X- and γ- ray detection; theoretical models are developed which allow a certain insight into the detection properties of each couple (material + contact); the third part deals with new contact geometries which allow a screening effect of the bulk (analogous to the Frisch grid effect in gaseous detectors) resulting in improved energy resolution and peak/valley ratios; encouraging first results on prototypes are presented and discussed. This work has allowed a better understanding of physical behaviour of CdTe based detectors, coupled with advances in technological issues to upgrade the overall performances of these detectors for application in X- and γ- ray imaging. (author)

  11. Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties

    International Nuclear Information System (INIS)

    Vigil-Galan, O.; Sanchez-Meza, E.; Ruiz, C.M.; Sastre-Hernandez, J.; Morales-Acevedo, A.; Cruz-Gandarilla, F.; Aguilar-Hernandez, J.; Saucedo, E.; Contreras-Puente, G.; Bermudez, V.

    2007-01-01

    The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are presented. The CdTe:Bi films were characterized using Photoluminescence, Hall effect, X-Ray diffraction, SEM and Photoconductivity measurements. Moreover, CdS/CdTe:Bi solar cells were made and their characteristics like short circuit current density (J sc ), open circuit voltage (V OC ), fill factor (FF) and efficiency (η) were determined. These devices were fabricated from Bi doped CdTe layers deposited on CdS with the same growth conditions than those used for the single CdTe:Bi layers. A correlation between the CdS/CdTe:Bi solar cell characteristics and the physical properties of the Bi doped CdTe thin films are presented and discussed

  12. The impact of electrostatic interactions on ultrafast charge transfer at Ag 29 nanoclusters–fullerene and CdTe quantum dots–fullerene interfaces

    KAUST Repository

    Ahmed, Ghada H.; Parida, Manas R.; Tosato, Alberto; AbdulHalim, Lina G.; Usman, Anwar; Alsulami, Qana; Banavoth, Murali; Alarousu, Erkki; Bakr, Osman; Mohammed, Omar F.

    2015-01-01

    investigate the electrostatic interactions between the positively charged fullerene derivative C60-(N,N dimethylpyrrolidinium iodide) (CF) employed as an efficient molecular acceptor and two different donor molecules: Ag29 nanoclusters (NCs) and CdTe quantum

  13. ASTRO-H CdTe detectors proton irradiation at PIF

    International Nuclear Information System (INIS)

    Limousin, O.; Renaud, D.; Horeau, B.; Dubos, S.; Laurent, P.; Lebrun, F.; Chipaux, R.; Boatella Polo, C.; Marcinkowski, R.; Kawaharada, M.; Watanabe, S.; Ohta, M.; Sato, G.; Takahashi, T.

    2015-01-01

    Asbstract: The French Atomic Energy Commission (CEA), with the support of the European Space Agency (ESA), is partner of the Soft Gamma-Ray Detector (SGD) and the Hard X-ray Imager (HXI) onboard the 6th Japanese X-ray scientific satellite ASTRO-H (JAXA) initiated by the Institute of Space and Astronautical Science (ISAS). Both scientific instruments, one hosting a series of Compton Gamma Cameras and the other being a focal plane of a grazing incidence mirror telescope in the hard X-ray domain, are equipped with Cadmium Telluride based detectors. ASTRO-H will be operated in a Low Earth Orbit with a 31° inclination at ~550 km altitude, thus passing daily through the South Atlantic Anomaly radiation belt, a specially harsh environment where the detectors are suffering the effect of the interaction with trapped high energy protons. As CdTe detector performance might be affected by the irradiation, we investigate the effect of the accumulated proton fluence on their spectral response. To do so, we have characterized and irradiated representative samples of SGD and HXI detector under different conditions. The detectors in question, from ACRORAD, are single-pixels having a size of 2 mm by 2 mm and 750 µm thick. The Schottky contact is either made of an Indium or Aluminum for SGD and HXI respectively. We ran the irradiation test campaign at the Proton Irradiation Facility (PIF) at PSI, and ESA approved equipment to evaluate the radiation hardness of flight hardware. We simulated the proton flux expected on the sensors over the entire mission, and secondary neutrons flux due to primary proton interactions into the surrounding BGO active shielding. We eventually characterized the detector response evolution, emphasizing each detector spectral response as well as its stability by studying the so-called Polarization effect. The latter is provoking a spectral response degradation against time as a charge accumulation process occurs in Schottky type CdTe sensors. In this paper

  14. Supply risks associated with CdTe and CIGS thin-film photovoltaics

    International Nuclear Information System (INIS)

    Helbig, Christoph; Bradshaw, Alex M.; Kolotzek, Christoph; Thorenz, Andrea; Tuma, Axel

    2016-01-01

    Highlights: • Supply risks associated with thin film photovoltaic technologies are considered. • Eleven supply risk indicators are used to evaluate Cd, Te, Cu, In, Ga, Se and Mo. • Indicator weighting based on peer assessment and an Analytic Hierarchy Process. • Various possibilities for the aggregation of elemental supply risks discussed. • Aggregated results show a marginally lower supply risk for CdTe than for CIGS. - Abstract: As a result of the global warming potential of fossil fuels there has been a rapid growth in the installation of photovoltaic generating capacity in the last decade. While this market is dominated by crystalline silicon, thin-film photovoltaics are still expected to make a substantial contribution to global electricity supply in future, due both to lower production costs and to recent increases in conversion efficiency. At present, cadmium telluride (CdTe) and copper-indium-gallium diselenide (CuIn_xGa_1_−_xSe_2) seem to be the most promising materials and currently have a share of ≈9% of the photovoltaic market. An expected stronger market penetration by these thin-film technologies raises the question as to the supply risks associated with the constituent elements. Against this background, we report here a semi-quantitative, relative assessment of mid- to long-term supply risk associated with the elements Cd, Te, Cu, In, Ga, Se and Mo. In this approach, the supply risk is measured using 11 indicators in the four categories “Risk of Supply Reduction”, “Risk of Demand Increase”, “Concentration Risk” and “Political Risk”. In a second step, the single indicator values, which are derived from publicly accessible databases, are weighted relative to each other specifically for the case of thin film photovoltaics. For this purpose, a survey among colleagues and an Analytic Hierarchy Process (AHP) approach are used, in order to obtain a relative, element-specific value for the supply risk. The aggregation of these

  15. The large-area CdTe thin film for CdS/CdTe solar cell prepared by physical vapor deposition in medium pressure

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Run; Liu, Bo; Yang, Xiaoyan; Bao, Zheng; Li, Bing, E-mail: libing70@126.com; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

    2016-01-01

    Graphical abstract: - Highlights: • The large-area CdTe film has been prepared by PVD under the pressure of 0.9 kPa. • The as-prepared CdTe thin film processes excellent photovoltaic properties. • This technique is suitable for depositing large-area CdTe thin film. • The 14.6% champion efficiency CdS/CdTe cell has been achieved. - Abstract: The Cadmium telluride (CdTe) thin film has been prepared by physical vapor deposition (PVD), the Ar + O{sub 2} pressure is about 0.9 kPa. This method is a newer technique to deposit CdTe thin film in large area, and the size of the film is 30 × 40 cm{sup 2}. This method is much different from the close-spaced sublimation (CSS), as the relevance between the source temperature and the substrate temperature is weak, and the gas phase of CdTe is transferred to the substrate by Ar + O{sub 2} flow. Through this method, the compact and uniform CdTe film (30 × 40 cm{sup 2}) has been achieved, and the performances of the CdTe thin film have been determined by transmission spectrum, SEM and XRD. The film is observed to be compact with a good crystallinity, the CdTe is polycrystalline with a cubic structure and a strongly preferred (1 1 1) orientation. Using the CdTe thin film (3 × 5 cm{sup 2}) which is taken from the deposited large-area film, the 14.6% efficiency CdS/CdTe thin film solar cell has been prepared successfully. The structure of the cell is glass/FTO/CdS/CdTe/graphite slurry/Au, short circuit current density (J{sub sc}) of the cell is 26.9 mA/cm{sup 2}, open circuit voltage (V{sub oc}) is 823 mV, and filling factor (FF) is 66.05%. This technique can be a quite promising method to apply in the industrial production, as it has great prospects in the fabricating of large-area CdTe film.

  16. A novel ascorbic acid sensor based on the Fe3+/Fe2+ modulated photoluminescence of CdTe quantum dots@SiO2 nanobeads.

    Science.gov (United States)

    Ma, Qiang; Li, Yang; Lin, Zi-Han; Tang, Guangchao; Su, Xing-Guang

    2013-10-21

    In this paper, CdTe quantum dot (QD)@silica nanobeads were used as modulated photoluminescence (PL) sensors for the sensing of ascorbic acid in aqueous solution for the first time. The sensor was developed based on the different quenching effects of Fe(2+) and Fe(3+) on the PL intensity of the CdTe QD@ silica nanobeads. Firstly, the PL intensity of the CdTe QDs was quenched in the presence of Fe(3+). Although both Fe(2+) and Fe(3+) could quench the PL intensity of the CdTe QDs, the quenching efficiency were quite different for Fe(2+) and Fe(3+). The PL intensity of the CdTe QD@silica nanobeads can be quenched by about 15% after the addition of Fe(3+) (60 μmol L(-1)), while the PL intensity of the CdTe QD@silica nanobeads can be quenched about 49% after the addition of Fe(2+) (60 μmol L(-1)). Therefore, the PL intensity of the CdTe QD@silica nanobeads decreased significantly when Fe(3+) was reduced to Fe(2+) by ascorbic acid. To confirm the strategy of PL modulation in this sensing system, trace H2O2 was introduced to oxidize Fe(2+) to Fe(3+). As a result, the PL intensity of the CdTe QD@silica nanobeads was partly recovered. The proposed sensor could be used for ascorbic acid sensing in the concentration range of 3.33-400 μmol L(-1), with a detection limit (3σ) of 1.25 μmol L(-1) The feasibility of the proposed sensor for ascorbic acid determination in tablet samples was also studied, and satisfactory results were obtained.

  17. Detection of malachite green in fish based on magnetic fluorescent probe of CdTe QDs/nano-Fe3O4@MIPs

    Science.gov (United States)

    Wu, Le; Lin, Zheng-Zhong; Zeng, Jun; Zhong, Hui-Ping; Chen, Xiao-Mei; Huang, Zhi-Yong

    2018-05-01

    A magnetic fluorescent probe of CdTe QDs/nano-Fe3O4@MIPs was prepared using CdTe QDs and Fe3O4 nanoparticles as co-nucleus and molecularly imprinted polymers (MIPs) as specific recognition sites based on a reverse microemulsion method. With the specific enrichment and magnetic separation properties, the probe of CdTe QDs/nano-Fe3O4@MIPs was used to detect malachite green (MG) in fish samples. The TEM analysis showed that the particles of CdTe QDs/nano-Fe3O4@MIPs were spherical with average diameter around 53 nm, and a core-shell structure was well-shaped with several Fe3O4 nanoparticles and CdTe QDs embedded in each of the microsphere. Quick separation of the probes from solutions could be realized with a magnet, indicating the excellent magnetic property of CdTe QDs/nano-Fe3O4@MIPs. The probe exhibited high specific adsorption towards MG and excellent fluorescence emission at λem 598 nm. The fluorescence of CdTe QDs/nano-Fe3O4@MIPs could be linearly quenched by MG at the concentrations from 0.025 to 1.5 μmol L-1. The detection limit was 0.014 μmol L-1. The average recovery of spiked MG in fish samples was 105.2%. The result demonstrated that the as-prepared CdTe QDs/nano-Fe3O4@MIPs could be used as a probe to the detection of trace MG in fish samples.

  18. Spectroscopic study on the doping of polycrystalline CdTe layers for solar cells; Spektroskopische Untersuchungen zur Dotierung von polykristallinen CdTe-Schichten fuer Solarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Kraft, Christian

    2011-11-29

    First in the present thesis the fundamental properties of CdTe are described. In the following it is discussed, how a CdTe solar cell is generally constructed, which specialities are to be regarded, and how an improvement of the actually reachable data of such a solar cell in view of the efficiency can be reached fundamentally and in then practical realization. In the third chapter the physical foundations of the most important methods are discussed, which are applied in the framework of this thesis for the analysis of the CdTe layers. The fourth chapter describes the details of the experiments of this thesis. The fifth chapter deals with the analysis of the photoluminescence of CdTe layers. Special attention is put on the analysis of the excitonic luminescence. The sixth chapter treats the implantation of CdTe layers with phosphor. The influence of phosphorus as dopant on the PL spectra of CdTe and the correponding characteristics of implanted solar cells are presented. Also the influence of radiation damages as consequence of the ion implantation is studied in this chapter by means of the analysis of differently thick absorber layers. In the seventh chapter finally a new procedure for the fabrication of solar cells on the base of CdTe as absorber material is introduced, which shall make possible to change the stoichiometry of cadmium mand tellurium specifically and to present additionally a suited material, in order to form the doping of CdTE a solar-cell material variably. The fundamental properties of the new facility are experimentally determined, and first solar cells are fabricated with this facility and analyzed. Also an in-situ doping with phosphorus is thereby performed and the result studied.

  19. Charge separation and transfer in hybrid type II tunneling structures of CdTe and CdSe nanocrystals

    International Nuclear Information System (INIS)

    Gross, Dieter Konrad Michael

    2013-01-01

    Closely packed nanocrystal systems have been investigated in this thesis with respect to charge separation by charge carrier tunneling. Clustered and layered samples have been analyzed using PL-measurements and SPV-methods. The most important findings are reviewed in the following. A short outlook is also provided for potential further aspects and application of the presented results. The main purpose of this thesis was to find and quantify electronic tunneling transfer in closely packed self-assembled nanocrystal structures presenting quantum mechanical barriers of about 1 nm width. We successfully used hybrid assemblies of CdTe and CdSe nanocrystals where the expected type II alignment between CdTe and CdSe typically leads to a concentration of electrons in CdSe and holes in CdTe nanocrystals. We were able to prove the charge selectivity of the CdTe-CdSe nanocrystal interface which induces charge separation. We mainly investigated the effects related to the electron transfer from CdTe to CdSe nanocrystals. Closely packing was achieved by two independent methods: the disordered colloidal clustering in solution and the layered assembly on dry glass substrates. Both methods lead to an inter-particle distance of about 1 nm of mainly organic material which acts as a tunneling barrier. PL-spectroscopy was applied. The PL-quenching of the CdTe nanocrystals in hybrid assemblies indicates charge separation by electron transfer from CdTe to CdSe nanocrystals. A maximum quenching rate of up to 1/100 ps was measured leading to a significant global PL-quenching of up to about 70 % for the CdTe nanocrystals. It was shown that charge separation dynamics compete with energy transfer dynamics and that charge separation typically dominates. The quantum confinement effect was used to tune the energetic offset between the CdTe and CdSe nanocrystals. We thus observe a correlation of PL-quenching and offset of the energy states for the electron transfer. The investigated PL

  20. Charge separation and transfer in hybrid type II tunneling structures of CdTe and CdSe nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Gross, Dieter Konrad Michael

    2013-11-08

    Closely packed nanocrystal systems have been investigated in this thesis with respect to charge separation by charge carrier tunneling. Clustered and layered samples have been analyzed using PL-measurements and SPV-methods. The most important findings are reviewed in the following. A short outlook is also provided for potential further aspects and application of the presented results. The main purpose of this thesis was to find and quantify electronic tunneling transfer in closely packed self-assembled nanocrystal structures presenting quantum mechanical barriers of about 1 nm width. We successfully used hybrid assemblies of CdTe and CdSe nanocrystals where the expected type II alignment between CdTe and CdSe typically leads to a concentration of electrons in CdSe and holes in CdTe nanocrystals. We were able to prove the charge selectivity of the CdTe-CdSe nanocrystal interface which induces charge separation. We mainly investigated the effects related to the electron transfer from CdTe to CdSe nanocrystals. Closely packing was achieved by two independent methods: the disordered colloidal clustering in solution and the layered assembly on dry glass substrates. Both methods lead to an inter-particle distance of about 1 nm of mainly organic material which acts as a tunneling barrier. PL-spectroscopy was applied. The PL-quenching of the CdTe nanocrystals in hybrid assemblies indicates charge separation by electron transfer from CdTe to CdSe nanocrystals. A maximum quenching rate of up to 1/100 ps was measured leading to a significant global PL-quenching of up to about 70 % for the CdTe nanocrystals. It was shown that charge separation dynamics compete with energy transfer dynamics and that charge separation typically dominates. The quantum confinement effect was used to tune the energetic offset between the CdTe and CdSe nanocrystals. We thus observe a correlation of PL-quenching and offset of the energy states for the electron transfer. The investigated PL

  1. Charge separation and transfer in hybrid type II tunneling structures of CdTe and CdSe nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Gross, Dieter Konrad Michael

    2013-11-08

    Closely packed nanocrystal systems have been investigated in this thesis with respect to charge separation by charge carrier tunneling. Clustered and layered samples have been analyzed using PL-measurements and SPV-methods. The most important findings are reviewed in the following. A short outlook is also provided for potential further aspects and application of the presented results. The main purpose of this thesis was to find and quantify electronic tunneling transfer in closely packed self-assembled nanocrystal structures presenting quantum mechanical barriers of about 1 nm width. We successfully used hybrid assemblies of CdTe and CdSe nanocrystals where the expected type II alignment between CdTe and CdSe typically leads to a concentration of electrons in CdSe and holes in CdTe nanocrystals. We were able to prove the charge selectivity of the CdTe-CdSe nanocrystal interface which induces charge separation. We mainly investigated the effects related to the electron transfer from CdTe to CdSe nanocrystals. Closely packing was achieved by two independent methods: the disordered colloidal clustering in solution and the layered assembly on dry glass substrates. Both methods lead to an inter-particle distance of about 1 nm of mainly organic material which acts as a tunneling barrier. PL-spectroscopy was applied. The PL-quenching of the CdTe nanocrystals in hybrid assemblies indicates charge separation by electron transfer from CdTe to CdSe nanocrystals. A maximum quenching rate of up to 1/100 ps was measured leading to a significant global PL-quenching of up to about 70 % for the CdTe nanocrystals. It was shown that charge separation dynamics compete with energy transfer dynamics and that charge separation typically dominates. The quantum confinement effect was used to tune the energetic offset between the CdTe and CdSe nanocrystals. We thus observe a correlation of PL-quenching and offset of the energy states for the electron transfer. The investigated PL

  2. Effect of capping agent on selectivity and sensitivity of CdTe quantum dots optical sensor for detection of mercury ions

    Science.gov (United States)

    Labeb, Mohmed; Sakr, Abdel-Hamed; Soliman, Moataz; Abdel-Fettah, Tarek M.; Ebrahim, Shaker

    2018-05-01

    Cadmium telluride (CdTe) quantum dots (QDs) were prepared from an aqueous solution containing CdCl2 and Te precursor in the presence of thioglycolic acid (TGA) or L-cysteine as capping agents. Two optical sensors have been developed for Hg2+ ions with very low concentration in the range of nanomolar (nM) or picomolar (pM) depending on the type of capping agents and based on photoluminescence (PL) quenching of CdTe QDs. It was observed that low concentrations of Hg2+ ions quench the fluorescence spectra of CdTe QDs and TGA capped CdTe QDs exhibited a linear response to Hg2+ ions in the concentration range from 1.25 to 10 nM. Moreover, it was found that L-cysteine capped CdTe QDs optical sensor with a sensitivity of 6 × 109 M-1, exhibited a linear coefficient of 0.99 and showed a detection limit of 2.7 pM in range from 5 to 25 pM of Hg2+ ions was achieved. In contrast to the significant response that was observed for Hg2+, a weak signal response was noted upon the addition of other metal ions indicating an excellent selectivity of CdTe QDs towards Hg2+.

  3. CdTe as a passivating layer in CdTe/HgCdTe heterostructures

    International Nuclear Information System (INIS)

    Virt, I. S.; Kurilo, I. V.; Rudyi, I. A.; Sizov, F. F.; Mikhailov, N. N.; Smirnov, R. N.

    2008-01-01

    CdTe/Hg 1-x Cd x Te heterostructures are studied. In the structures, CdTe is used as a passivating layer deposited as a polycrystal or single crystal on a single-crystal Hg 1-x Cd x Te film. The film and a passivating layer were obtained in a single technological process of molecular beam epitaxy. The structure of passivating layers was studied by reflection high-energy electron diffraction, and the effect of the structure of the passivating layer on the properties of the active layer was studied by X-ray diffractometry. Mechanical properties of heterostructures were studied by the microhardness method. Electrical and photoelectrical parameters of the Hg 1-x Cd x Te films are reported.

  4. Production of CdTe Semiconductor Thin Films by Electrodeposition Technique for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Ahmet PEKSÖZ

    2016-08-01

    Full Text Available Electro-deposited cadmium tellurite (CuTe thin film was grown onto ITO-coated glass substrate for 120 seconds at the room temperature and a constant cathodic potential of -0.85 V. Deposition solution was prepared from cadmium chloride (CdCl2, sodium tellurite (Na2TeO3 and pure water. The pH value of the deposition solution was adjusted to 2.0 by adding HCl. The EDX analysis shows that the film has 52% Cd and 48% Te elemental compositions. Film thickness was found to be 140 nm. The CdTe thin film exhibits p-type semiconductor character, and has an energy bandgap of 1.47 eV. 

  5. X-ray micro-beam characterization of a small pixel spectroscopic CdTe detector

    Science.gov (United States)

    Veale, M. C.; Bell, S. J.; Seller, P.; Wilson, M. D.; Kachkanov, V.

    2012-07-01

    A small pixel, spectroscopic, CdTe detector has been developed at the Rutherford Appleton Laboratory (RAL) for X-ray imaging applications. The detector consists of 80 × 80 pixels on a 250 μm pitch with 50 μm inter-pixel spacing. Measurements with an 241Am γ-source demonstrated that 96% of all pixels have a FWHM of better than 1 keV while the majority of the remaining pixels have FWHM of less than 4 keV. Using the Diamond Light Source synchrotron, a 10 μm collimated beam of monochromatic 20 keV X-rays has been used to map the spatial variation in the detector response and the effects of charge sharing corrections on detector efficiency and resolution. The mapping measurements revealed the presence of inclusions in the detector and quantified their effect on the spectroscopic resolution of pixels.

  6. Durch intrinsische defekte induzierte uphill-diffusion von Ag und Cu in CdTe

    CERN Document Server

    Wagner, Frank

    In the framework of the present thesis, the diffusion of Ag in CdTe was investigated by the radiotracer $^{111}$Ag. Thereby the focus was on the possibility to create a Ag flux from regions of low Ag concentration to regions of high Ag concentration (uphill diffusion). The experimentally observed diffusion profiles are explained in the framework of a thermodynamic diffusion model, taking into account the defect charge state and the defect interaction. The distribution of the charged defects produces a electric field, which leads to a drift of the charged defects. The experimental data are well explained assuming that Ag is incorporated interstitially and ionized (Agi$^{+}$). The Agi$^{+}$ concentration then reflects the profile of the Fermi level, which again is determined by the intrinsic defect distribution or, more precisely, the deviation from stoichiometry. On the basis of the experimental data it is possible to gather information on the thermodynamic properties of extrinsic as well as intrinsic defects....

  7. The interactions between CdTe quantum dots and proteins: understanding nano-bio interface

    Directory of Open Access Journals (Sweden)

    Shreeram S. Joglekar

    2017-01-01

    Full Text Available Despite remarkable developments in the nanoscience, relatively little is known about the physical (electrostatic interactions of nanoparticles with bio macromolecules. These interactions can influence the properties of both nanoparticles and the bio-macromolecules. Understanding this bio-interface is a prerequisite to utilize both nanoparticles and biomolecules for bioengineering. In this study, luminescent, water soluble CdTe quantum dots (QDs capped with mercaptopropionic acid (MPA were synthesized by organometallic method and then interaction between nanoparticles (QDs and three different types of proteins (BSA, Lysozyme and Hemoglobin were investigated by fluorescence spectroscopy at pH= 7.4. Based on fluorescence quenching results, Stern-Volmer quenching constant (Ksv, binding constant (Kq and binding sites (n for proteins were calculated. The results show that protein structure (e.g.,globular, metalloprotein, etc. has a significant role in Protein-Quantum dots interactions and each type of protein influence physicochemical properties of Quantum dots differently.

  8. Efficient optical trapping of CdTe quantum dots by femtosecond laser pulses

    KAUST Repository

    Chiang, Weiyi

    2014-12-11

    The development in optical trapping and manipulation has been showing rapid progress, most of it is in the small particle sizes in nanometer scales, substituting the conventional continuous-wave lasers with high-repetition-rate ultrashort laser pulse train and nonlinear optical effects. Here, we evaluate two-photon absorption in optical trapping of 2.7 nm-sized CdTe quantum dots (QDs) with high-repetition-rate femtosecond pulse train by probing laser intensity dependence of both Rayleigh scattering image and the two-photon-induced luminescence spectrum of the optically trapped QDs. The Rayleigh scattering imaging indicates that the two-photon absorption (TPA) process enhances trapping ability of the QDs. Similarly, a nonlinear increase of the two-photon-induced luminescence with the incident laser intensity fairly indicates the existence of the TPA process.

  9. Highly sensitive detection of lead(II) ion using multicolor CdTe quantum dots

    International Nuclear Information System (INIS)

    Zhong, W.; Zhang, C.; Gao, Q.; Li, H.

    2012-01-01

    Multicolor and water-soluble CdTe quantum dots (QDs) were synthesized with thioglycolic acid (TGA) as stabilizer. These QDs have a good size distribution, display high fluorescence quantum yield, and can be applied to the ultrasensitive detection of Pb(II) ion by virtue of their quenching effect. The size of the QDs exerts a strong effect on sensitivity, and quenching of luminescence is most effective for the smallest particles. The quenching mechanism is discussed. Fairly selective detection was accomplished by utilizing QDs with a diameter of 1. 6 nm which resulted in a detection limit of 4. 7 nmol L -1 concentration of Pb(II). The method was successfully applied to the determination of Pb(II) in spinach and citrus leaves, and the results are in good agreement with those obtained with atomic absorption spectrometry. (author)

  10. Performance optimization of CdTe and CdZnTe detectors for γ-spectrometry

    International Nuclear Information System (INIS)

    Montemont, Guillaume

    2000-01-01

    This study deals with room-temperature gamma spectrometry with CdTe and CdZnTe semiconductor detectors. The aim was the improvement of energy resolution and detection efficiency. Some different phenomena have been investigated. Electronic noise knowledge has enabled us to optimize the design of filtering. Charge transport induces signal shape uncertainty and the processing circuit has been adapted in order to account for these variations. Study and simulation of electrical current induction process has permitted the development of a new Frisch-grid based detection structure. We have reached 3% energy resolutions at 122 keV without detection efficiency loss. Finally, the remaining limits of detector performances have been estimated by focusing on gamma interaction phenomena and material non-uniformity problems. (author) [fr

  11. Interaction of Water-Soluble CdTe Quantum Dots with Bovine Serum Albumin

    Science.gov (United States)

    2011-01-01

    Semiconductor nanoparticles (quantum dots) are promising fluorescent markers, but it is very little known about interaction of quantum dots with biological molecules. In this study, interaction of CdTe quantum dots coated with thioglycolic acid (TGA) with bovine serum albumin was investigated. Steady state spectroscopy, atomic force microscopy, electron microscopy and dynamic light scattering methods were used. It was explored how bovine serum albumin affects stability and spectral properties of quantum dots in aqueous media. CdTe–TGA quantum dots in aqueous solution appeared to be not stable and precipitated. Interaction with bovine serum albumin significantly enhanced stability and photoluminescence quantum yield of quantum dots and prevented quantum dots from aggregating. PMID:27502633

  12. Measurements of low noise 64 channel counting ASIC for Si and CdTe strip detectors

    International Nuclear Information System (INIS)

    Kachel, M; Grybos, P; Szczygiel, R; Takeyoshi, T

    2011-01-01

    We present the design and performance of a 64-channel ASIC called SXDR64. The circuit is intended to work with DC coupled CdTe detectors as well as with standard AC coupled Si detectors. A single channel of the ASIC consists of a charge sensitive amplifier with a pole-zero cancellation circuit, a 4 th order programmable shaper, a base-line restorer and two independent discriminators with 20-bit counters equipped with RAM. The circuit is able to operate correctly with both polarities of the input signal and the detectors leakage current in a few nA range, with the average rate of input pulses up to 1 Mcps.

  13. Performance Stabilization of CdTe PV Modules using Bias and Light

    Energy Technology Data Exchange (ETDEWEB)

    Silverman, T. J.; Deceglie, M. G.; Marion, B.; Kurtz, S. R.

    2014-07-01

    Reversible performance changes due to light exposure frustrate repeatable performance measurements on CdTe PV modules. It is common to use extended light-exposure to ensure that measurements are representative of outdoor performance. We quantify the extent to which such a light-exposed state depends on module temperature and consider bias in the dark to aid in stabilization. We evaluate the use of dark forward bias to bring about a performance state equivalent to that obtained with light exposure, and to maintain a light-exposed state prior to STC performance measurement. Our results indicate that the most promising method for measuring a light-exposed state is to use light exposure at controlled temperature followed by prompt STC measurement with a repeatable time interval between exposure and the STC measurement.

  14. Multidirectional channeling analysis of epitaxial CdTe layers using an automatic RBS/channeling system

    Energy Technology Data Exchange (ETDEWEB)

    Wielunski, L S; Kenny, M J [CSIRO, Lindfield, NSW (Australia). Applied Physics Div.

    1994-12-31

    Rutherford Backscattering Spectrometry (RBS) is an ion beam analysis technique used in many fields. The high depth and mass resolution of RBS make this technique very useful in semiconductor material analysis [1]. The use of ion channeling in combination with RBS creates a powerful technique which can provide information about crystal quality and structure in addition to mass and depth resolution [2]. The presence of crystal defects such as interstitial atoms, dislocations or dislocation loops can be detected and profiled [3,4]. Semiconductor materials such as CdTe, HgTe and Hg+xCd{sub 1-x}Te generate considerable interest due to applications as infrared detectors in many technological areas. The present paper demonstrates how automatic RBS and multidirectional channeling analysis can be used to evaluate crystal quality and near surface defects. 6 refs., 1 fig.

  15. A pixel design for X-ray imaging with CdTe sensors

    Energy Technology Data Exchange (ETDEWEB)

    Lambropoulos, C.P.; Zervakis, E.G. [Technological Educational Institute of Halkis, Psahna - Evia (Greece); Loukas, D. [Institute of Nuclear Physics, NCSR Demokritos, Agia Paraskevi - Attiki (Greece)

    2008-07-01

    A readout architecture appropriate for X-ray Imaging using charge integration has been designed. Each pixel consists of a capacitive transimpedance amplifier, a sample and hold circuit a comparator and an 8 bit DRAM. Pixel level A/D conversion and local storage of the digitized signal is performed. The target sensors are 100{mu}m x 100 {mu}m CdTe pixel detectors and integration time of 1ms or less can be achieved. Special measures have been taken to minimize the gain fixed pattern noise and the reset noise, while purely digital correlation double sampling can be performed. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. A pixel design for X-ray imaging with CdTe sensors

    International Nuclear Information System (INIS)

    Lambropoulos, C.P.; Zervakis, E.G.; Loukas, D.

    2008-01-01

    A readout architecture appropriate for X-ray Imaging using charge integration has been designed. Each pixel consists of a capacitive transimpedance amplifier, a sample and hold circuit a comparator and an 8 bit DRAM. Pixel level A/D conversion and local storage of the digitized signal is performed. The target sensors are 100μm x 100 μm CdTe pixel detectors and integration time of 1ms or less can be achieved. Special measures have been taken to minimize the gain fixed pattern noise and the reset noise, while purely digital correlation double sampling can be performed. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Type conversion, contacts, and surface effects in electroplated CdTe films

    International Nuclear Information System (INIS)

    Basol, B.M.; Ou, S.S.; Stafsudd, O.M.

    1985-01-01

    Efficient electroplated CdS/CdTe solar cells can be fabricated by heat treating and type-converting the n-CdTe films deposited on CdS layers. In this paper, various mechanisms which may give rise to the conversion of electroplated CdTe films from n to p type are investigated. It is concluded that Cd-vacancy generation is the main mechanism of type conversion. Possible effects of oxygen on this mechanism are also discussed. Evaporated Au contacts to electroplated p-CdTe films were studied. It was found that the Au contacts depleted the excess Te present on the surface of Br 2 -methanol etched p-CdTe films. Oxygen was found to affect the electrical characteristics of such contacts

  18. The injection spectroscopy method for the study of deep traps in CdTe films

    International Nuclear Information System (INIS)

    Lyubchak, V.O.; Opanasyuk, A.S.; Tirkusova, N.V.; Kharchenko, V.Yi.

    1999-01-01

    A simple highly informative method is presented, which enables to precisely identify the mechanism of charge transfer in the investigated structures and to extract a correct information about the parameters of local states in the energy gap band of the material via space-change-limited current-voltage characteristics. The modelling shows a good coincidence of the parameters, reconstructed with the help of this method, of the distribution of traps with the input parameters of deep traps. Some modification of the differential method are tested on high-ohm med CdTe films. Four groups of monoenergetic deep traps are found. The obtained results evidence the perspectives of the injection spectroscopy method for the research of deep traps in semiconducting and dielectric materials

  19. Multidirectional channeling analysis of epitaxial CdTe layers using an automatic RBS/channeling system

    Energy Technology Data Exchange (ETDEWEB)

    Wielunski, L.S.; Kenny, M.J. [CSIRO, Lindfield, NSW (Australia). Applied Physics Div.

    1993-12-31

    Rutherford Backscattering Spectrometry (RBS) is an ion beam analysis technique used in many fields. The high depth and mass resolution of RBS make this technique very useful in semiconductor material analysis [1]. The use of ion channeling in combination with RBS creates a powerful technique which can provide information about crystal quality and structure in addition to mass and depth resolution [2]. The presence of crystal defects such as interstitial atoms, dislocations or dislocation loops can be detected and profiled [3,4]. Semiconductor materials such as CdTe, HgTe and Hg+xCd{sub 1-x}Te generate considerable interest due to applications as infrared detectors in many technological areas. The present paper demonstrates how automatic RBS and multidirectional channeling analysis can be used to evaluate crystal quality and near surface defects. 6 refs., 1 fig.

  20. Spectral resolution and high-flux capability tradeoffs in CdTe detectors for clinical CT.

    Science.gov (United States)

    Hsieh, Scott S; Rajbhandary, Paurakh L; Pelc, Norbert J

    2018-04-01

    Photon-counting detectors using CdTe or CZT substrates are promising candidates for future CT systems but suffer from a number of nonidealities, including charge sharing and pulse pileup. By increasing the pixel size of the detector, the system can improve charge sharing characteristics at the expense of increasing pileup. The purpose of this work is to describe these considerations in the optimization of the detector pixel pitch. The transport of x rays through the CdTe substrate was simulated in a Monte Carlo fashion using GEANT4. Deposited energy was converted into charges distributed as a Gaussian function with size dependent on interaction depth to capture spreading from diffusion and Coulomb repulsion. The charges were then collected in a pixelated fashion. Pulse pileup was incorporated separately with Monte Carlo simulation. The Cramér-Rao lower bound (CRLB) of the measurement variance was numerically estimated for the basis material projections. Noise in these estimates was propagated into CT images. We simulated pixel pitches of 250, 350, and 450 microns and compared the results to a photon counting detector with pileup but otherwise ideal energy response and an ideal dual-energy system (80/140 kVp with tin filtration). The modeled CdTe thickness was 2 mm, the incident spectrum was 140 kVp and 500 mA, and the effective dead time was 67 ns. Charge summing circuitry was not modeled. We restricted our simulations to objects of uniform thickness and did not consider the potential advantage of smaller pixels at high spatial frequencies. At very high x-ray flux, pulse pileup dominates and small pixel sizes perform best. At low flux or for thick objects, charge sharing dominates and large pixel sizes perform best. At low flux and depending on the beam hardness, the CRLB of variance in basis material projections tasks can be 32%-55% higher with a 250 micron pixel pitch compared to a 450 micron pixel pitch. However, both are about four times worse in variance

  1. Magnetic properties of vanadium doped CdTe: Ab initio calculations

    Energy Technology Data Exchange (ETDEWEB)

    Goumrhar, F. [Laboratory of Physics of High Energy, Modeling & Simulations (LPHE-MS), Faculty of Sciences, Mohammed V University of Rabat, Av. Ibn Batouta, B.P. 1014 Rabat (Morocco); Bahmad, L., E-mail: bahmad@fsr.ac.ma [Laboratory of Magnetism and High Energy Physics (LMPHE-URAC12), Faculty of Sciences, Mohammed V University of Rabat, Av. Ibn Batouta, B.P. 1014 Rabat (Morocco); Mounkachi, O. [Material and Nanomaterial Center, MAScIR Fondation, Rabat (Morocco); Benyoussef, A. [Laboratory of Magnetism and High Energy Physics (LMPHE-URAC12), Faculty of Sciences, Mohammed V University of Rabat, Av. Ibn Batouta, B.P. 1014 Rabat (Morocco); Material and Nanomaterial Center, MAScIR Fondation, Rabat (Morocco); Hassan II Academy of Sciences and Technology, Rabat (Morocco)

    2017-04-15

    In this paper, we are applying the ab initio calculations to study the magnetic properties of vanadium doped CdTe. This study is based on the Korringa–Kohn–Rostoker method (KKR) combined with the coherent potential approximation (CPA), within the local density approximation (LDA). This method is called KKR-CPA-LDA. We have calculated and plotted the density of states (DOS) in the energy diagram for different concentrations of dopants. We have also investigated the magnetic and half-metallic properties of this compound and shown the mechanism of exchange interaction. Moreover, we have estimated the Curie temperature T{sub c} for different concentrations. Finally, we have shown how the crystal field and the exchange splittings vary as a function of the concentrations.

  2. Commercial production of thin-film CdTe photovoltaic modules. 1995 annual report

    Energy Technology Data Exchange (ETDEWEB)

    Brog, T.K. [Golden Photon, Inc., CO (United States)

    1997-02-01

    This report presents a general overview of progress made in Golden Photon Inc.`s commercial production of thin-film CdTe photovoltaic modules. It describes the improvement in the number of batch runs processed through substrate deposition, all inter-connection, and encapsulation process steps; a progressive increase in the total number of panels processed each month; an improvement in cumulative process yields; and the continual attention given to modifying operating parameters of each major process step. The report also describes manpower status and staffing issues. The description of the status of subcontract progress includes engineering design; process improvement and development; cost improvement and raw materials; environment, safety, and health; and manufacturing cost and productivity optimization. Milestones and deliverables are also described.

  3. Surface analysis of CdTe after various pre-contact treatments

    Energy Technology Data Exchange (ETDEWEB)

    Waters, D.M. [Univ. of California, Santa Cruz, CA (United States). Dept. of Physics; Niles, D.; Gessert, T.A.; Albin, D.; Rose, D.H.; Sheldon, P. [National Renewable Energy Lab., Golden, CO (United States)

    1998-09-01

    The authors present surface analysis of close-spaced sublimated (CSS) CdTe after various pre-contact treatments. Methods include Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), and grazing-incidence x-ray diffraction (GI-XRD). XPS and GI-XRD analyses of the surface residue left by the solution-based CdCl{sub 2} treatment do not indicate the presence of a significant amount of CdCl{sub 2}. In addition, the solubility properties and relatively high thermal stability of the residue suggest the presence of the oxychloride Cd{sub 3}Cl{sub 2}O{sub 2} rather than CdCl{sub 2} as the major chlorine-containing component. Of the methods tested for their effectiveness in removing the residue, only HNO{sub 3} etches removed all detectable traces of chlorine from the surface.

  4. Toxicity assessment of zebrafish following exposure to CdTe QDs

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wei, E-mail: wzhang@ecust.edu.cn [State Environmental Protection Key Laboratory of Environmental Risk Assessment and Control on Chemical Process, East China University of Science and Technology, Shanghai 200237 (China); Shanghai Key Laboratory of Functional Materials Chemistry, East China University of Science and Technology, Shanghai 200237 (China); School of Resource and Environmental Engineering, East China University of Science and Technology, Shanghai 200237 (China); Lin, Kuangfei, E-mail: kflin@ecust.edu.cn [State Environmental Protection Key Laboratory of Environmental Risk Assessment and Control on Chemical Process, East China University of Science and Technology, Shanghai 200237 (China); Shanghai Key Laboratory of Functional Materials Chemistry, East China University of Science and Technology, Shanghai 200237 (China); School of Resource and Environmental Engineering, East China University of Science and Technology, Shanghai 200237 (China); Miao, Youna [State Environmental Protection Key Laboratory of Environmental Risk Assessment and Control on Chemical Process, East China University of Science and Technology, Shanghai 200237 (China); Shanghai Key Laboratory of Functional Materials Chemistry, East China University of Science and Technology, Shanghai 200237 (China); School of Resource and Environmental Engineering, East China University of Science and Technology, Shanghai 200237 (China); Dong, Qiaoxiang; Huang, Changjiang; Wang, Huili [Zhejiang Provincial Key Lab for Technology and Application of Model Organisms, Wenzhou Medical College, Wenzhou 325035 (China); Guo, Meijin [State Key Laboratory of Bioreactor Engineering, East China University of Science and Technology, Shanghai 200237 (China); Cui, Xinhong [Shanghai Institute of Landscape Gardening, Shanghai 200233 (China)

    2012-04-30

    Highlights: Black-Right-Pointing-Pointer The LC{sub 50} of TGA-CdTe for zebrafish at 120 hpf was 185.9 nM. Black-Right-Pointing-Pointer Zebrafish exposed to TGA-CdTe resulted in lower hatch rate and more malformation. Black-Right-Pointing-Pointer Body length and heart beat of zebrafish declined after exposure to TGA-CdTe. Black-Right-Pointing-Pointer Larvae exposure to TGA-CdTe elicited a higher basal swimming rate. Black-Right-Pointing-Pointer Abnormal vascular of FLI-1 transgenic zebrafish larvae exposed to TGA-CdTe occurred. - Abstract: CdTe quantum dots (QDs) are nanocrystals of unique composition and properties that have found many new commercial applications; therefore, their potential toxicity to aquatic organisms has become a hot research topic. The lab study was performed to determine the developmental and behavioral toxicities to zebrafish under continuous exposure to low concentrations of CdTe QDs (1-400 nM) coated with thioglycolic acid (TGA). The results show: (1) the 120 h LC{sub 50} of 185.9 nM, (2) the lower hatch rate and body length, more malformations, and less heart beat and swimming speed of the exposed zebrafish, (3) the brief burst and a higher basal swimming rate of the exposed zebrafish larvae during a rapid transition from light-to-dark, and (4) the vascular hyperplasia, vascular bifurcation, vascular crossing and turbulence of the exposed FLI-1 transgenic zebrafish larvae.

  5. Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zaunbrecher, Katherine N. [Department of Physics, Colorado State University, Fort Collins, Colorado 80523 (United States); National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Kuciauskas, Darius; Dippo, Pat; Barnes, Teresa M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Swartz, Craig H.; Edirisooriya, Madhavie; Ogedengbe, Olanrewaju S.; Sohal, Sandeep; Hancock, Bobby L.; LeBlanc, Elizabeth G.; Jayathilaka, Pathiraja A. R. D.; Myers, Thomas H. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666 (United States)

    2016-08-29

    Heterostructures with CdTe and CdTe{sub 1-x}Se{sub x} (x ∼ 0.01) absorbers between two wider-band-gap Cd{sub 1-x}Mg{sub x}Te barriers (x ∼ 0.25–0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. The dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects have a zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ∼6 μm, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 μs with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 μs.

  6. Feasibility study on BNCT-SPECT using a CdTe detector

    International Nuclear Information System (INIS)

    Murata, Isao; Mukai, Taiki; Ito, Masao; Miyamaru, Hiroyuki; Yoshida, Shigeo

    2011-01-01

    There is no doubt that boron neutron capture therapy (BNCT) is a promising cancer therapy in the near future. At present, one of the severest problems to solve is monitoring of the treatment effect during neutron irradiation. It is known to be difficult in real time. So far, activation foils, small detectors and so on were used to measure the thermal neutron fluence in a certain place of the tumor. The dose distribution is thus estimated from the measured result and prediction with a transport code. In the present study, 478 keV gamma-rays emitted from the excited state of 7 Li produced by 10 B(n,α) 7 Li reaction are directly measured to realize real time monitoring of the treatment effect of BNCT. In this paper, the result of the feasibility study carried out using a Monte Carlo transport code is summarized. We used CdTe detectors with a quite narrow collimator to obtain a BNCT image keeping good spatial resolution. The intensity of capture gamma-rays of 2223 keV produced by 1 H(n,γ) 2 H reaction is very much higher than that of 478 keV. We thus adjusted the detector efficiency by selecting an appropriate thickness so as to optimize the efficiency ratio between 478 and 2223 keV. From the result of the detector response calculation, in case of 20 mm thick CdTe detector with the collimator of 2 mm in diameter, sufficient net count of ∼1000 for 478 keV in 30 min. was realized. It means an efficient and high-resolution BNCT-SPECT image could be obtained. (author)

  7. Thin-film-based CdTe photovoltaic module characterization: measurements and energy prediction improvement.

    Science.gov (United States)

    Lay-Ekuakille, A; Arnesano, A; Vergallo, P

    2013-01-01

    Photovoltaic characterization is a topic of major interest in the field of renewable energy. Monocrystalline and polycrystalline modules are mostly used and, hence characterized since many laboratories have data of them. Conversely, cadmium telluride (CdTe), as thin-film module are, in some circumstances, difficult to be used for energy prediction. This work covers outdoor testing of photovoltaic modules, in particular that regarding CdTe ones. The scope is to obtain temperature coefficients that best predict the energy production. A First Solar (K-275) module has been used for the purposes of this research. Outdoor characterizations were performed at Department of Innovation Engineering, University of Salento, Lecce, Italy. The location of Lecce city represents a typical site in the South Italy. The module was exposed outdoor and tested under clear sky conditions as well as under cloudy sky ones. During testing, the global-inclined irradiance varied between 0 and 1500 W/m(2). About 37,000 I-V characteristics were acquired, allowing to process temperature coefficients as a function of irradiance and ambient temperature. The module was characterized by measuring the full temperature-irradiance matrix in the range from 50 to 1300 W/m(2) and from -1 to 40 W/m(2) from October 2011 to February 2012. Afterwards, the module energy output, under real conditions, was calculated with the "matrix method" of SUPSI-ISAAC and the results were compared with the five months energy output data of the same module measured with the outdoor energy yield facility in Lecce.

  8. Emission switching in carbon dots coated CdTe quantum dots driving by pH dependent hetero-interactions

    Energy Technology Data Exchange (ETDEWEB)

    Dai, Xiao; Wang, Hao; Yi, Qinghua; Wang, Yun; Cong, Shan; Zhao, Jie; Sun, Yinghui; Zou, Guifu, E-mail: zouguifu@suda.edu.cn, E-mail: jiexiong@uestc.edu.cn [College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China); Qian, Zhicheng [School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Huang, Jianwen; Xiong, Jie, E-mail: zouguifu@suda.edu.cn, E-mail: jiexiong@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Luo, Hongmei [Department of Chemical and Materials Engineering, New Mexico State University, Las Cruces, New Mexico 88003 (United States)

    2015-11-16

    Due to the different emission mechanism between fluorescent carbon dots and semiconductor quantum dots (QDs), it is of interest to explore the potential emission in hetero-structured carbon dots/semiconducting QDs. Herein, we design carbon dots coated CdTe QDs (CDQDs) and investigate their inherent emission. We demonstrate switchable emission for the hetero-interactions of the CDQDs. Optical analyses indicate electron transfer between the carbon dots and the CdTe QDs. A heterojunction electron process is proposed as the driving mechanism based on N atom protonation of the carbon dots. This work advances our understanding of the interaction mechanism of the heterostructured CDQDs and benefits the future development of optoelectronic nanodevices with new functionalities.

  9. Possible use of CdTe detectors in kVp monitoring of diagnostic X-ray tubes

    International Nuclear Information System (INIS)

    Krmar, M.; Bucalovic, N.; Baucal, M.; Jovancevic, N.

    2010-01-01

    It has been suggested that kVp of diagnostic X-ray devices (or maximal energy of X-ray photon spectra) should be monitored routinely; however a standardized non-invasive technique has yet to be developed and proposed. It is well known that the integral number of Compton scattered photons and the intensities of fluorescent X-ray lines registered after irradiation of some material by an X-ray beam are a function of the maximal beam energy. CdTe detectors have sufficient energy resolution to distinguish individual X-ray fluorescence lines and high efficiency for the photon energies in the diagnostic region. Our initial measurements have demonstrated that the different ratios of the integral number of Compton scattered photons and intensities of K and L fluorescent lines detected by CdTe detector are sensitive function of maximal photon energy and could be successfully applied for kVp monitoring.

  10. Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions

    Science.gov (United States)

    Ramos-Ruiz, Adriana; Wilkening, Jean V.; Field, James A.; Sierra-Alvarez, Reyes

    2017-01-01

    A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. PMID:28472709

  11. CdTe and Cd sub 1 sub - sub x Zn sub x Te for nuclear detectors: facts and fictions

    CERN Document Server

    Fougeres, P; Hageali, M; Koebel, J M; Regal, R

    1999-01-01

    Both CdTe and Cd sub 1 sub - sub x Zn sub x Te (CZT) can be considered from their physical properties as very good materials for room temperature X- and gamma-rays detection. However, despite years of intense material research, no significant advance has been made to help one to choose between both semiconductors. This paper reviews a few facts about CdTe and CZT to attempt to draw a real comparison between both. THM-CdTe and HPB-CZT have been grown and characterized in Strasbourg. Crystal growth, alloying effects, transport properties and defects are reviewed on the basis of our results and the published ones. The results show that it is still very difficult to claim which one is the best.

  12. Fluorescence Determination of Warfarin Using TGA-capped CdTe Quantum Dots in Human Plasma Samples.

    Science.gov (United States)

    Dehbozorgi, A; Tashkhourian, J; Zare, S

    2015-11-01

    In this study, some effort has been performed to provide low temperature, less time consuming and facile routes for the synthesis of CdTe quantum dots using ultrasound and water soluble capping agent thioglycolic acid. TGA-capped CdTe quantum dots were characterized through x-ray diffraction, transmission electron microscopy, Fourier transform infrared, ultraviolet-visible and fluorescence spectroscopy. The prepared quantum dots were used for warfarin determination based on the quenching of the fluorescence intensity in aqueous solution. Under the optimized conditions, the linear range of quantum dots fluorescence intensity versus the concentration of warfarin was 0.1-160.0 μM, with the correlation coefficient of 0.9996 and a limit of detection of 77.5 nM. There was no interference to coexisting foreign substances. The selectivity of the sensor was also tested and the results show that the developed method possesses a high selectivity for warfarin.

  13. Enhanced electrochemiluminescence of CdTe quantum dots with carbon nanotube film and its sensing of methimazole

    International Nuclear Information System (INIS)

    Hua Lijuan; Han Heyou; Chen Haibo

    2009-01-01

    A novel analytical method was reported based on electrochemiluminescence (ECL) of CdTe quantum dots (QDs) using carbon nanotube (CNT) modified glass carbon (GC) electrode. It was found that the CNT film on the GC electrode could greatly enhance the ECL intensity of CdTe QDs dispersed in aqueous solution, and the ECL peak potential and ECL onset potential both shifted positively. Influences of some factors on the ECL intensity were investigated using CNT modified GC electrode, and a high sensitive method for the determination of methimazole was developed under the optimal conditions. The ECL intensity decreased linearly in the concentration range of 1.0 x 10 -9 to 4.0 x 10 -7 M for methimazole with the relative coefficient of 0.995, which showed finer sensitivity than that at bare electrode. Thus, CNT modified electrode would have a great merit to expand the application of QD ECL

  14. Semiconductor interfaces of polycrystalline CdTe thin-film solar cells. Characterization and modification of electronic properties

    International Nuclear Information System (INIS)

    Fritsche, J.

    2003-01-01

    In this thesis for the first time the electronic properties of the semiconductor interfaces in polycrystalline CdTe thin-film solar cells, as well as the morphological and electronic properties of the single semiconductor surfaces were systematically characterized by surface-sensitive measuring methods. The morphological surface properties were analyzed by scanning force microscopy. As substrate materials with SnO 2 /ITO covered glass was applied, where the CdS and CdTe layers were deposited. Furthermore the electronic and morphological material properties of differently treated SnO 2 surfaces were characterized. Beside the studies with scanning force microscopy sputtering depth profiles and X-ray photoelectron spectroscopy were measured

  15. Comparative study for small computer supported clearance determination with 131iodine hippuran using CdTe detectors

    International Nuclear Information System (INIS)

    Duerr, G.

    1986-01-01

    With the goal to work out a simple, non-invasive method for the total clearance determination also for immobile patients, we carried out this clearance study with CdTe semi-conductor detectors. The 131 iodine hippuran clearance determination was carried out on 69 patients in the nuclear medicine department of the Radiological Policlinic in the framework of a routine diagnosis with ambulant and stationary patients with a gamma camera and a connecting evaluation system. At the same time we recorded the shoulder curves using two CdTe semi-conductor detectors and deposited the data in a portable semi-conductor memory. Next the hypotheses for the routine use with the inclusion of commercially common small computers was worked out. The plasma disappearance curves which were recorded over the shoulder region were evaluated with a small computer according to the method of the modified Oberhausen tables and the Oberhausen formula. (orig./DG) [de

  16. High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals

    Science.gov (United States)

    Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah; Scarpulla, Michael A.

    2018-05-01

    Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 1016 and 1020 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 1017 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 1017/cm3 range is observed for samples quenched at 200-300 °C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 1016 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 1018 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

  17. Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior

    Science.gov (United States)

    Nagaoka, Akira; Kuciauskas, Darius; Scarpulla, Michael A.

    2017-12-01

    Cd-rich composition and group-V element doping are of interest for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe, but the critical details concerning point defects are not yet fully established. Herein, we report on the properties of arsenic doped CdTe single crystals grown from Cd solvent by the travelling heater method. The photoluminescence spectra and activation energy of 74 ± 2 meV derived from the temperature-dependent Hall effect are consistent with AsTe as the dominant acceptor. Doping in the 1016 to 1017/cm3 range is achieved for measured As concentrations between 1016 and 1020/cm3 with the highest doping efficiency of 40% occurring near 1017 As/cm3. We observe persistent photoconductivity, a hallmark of light-induced metastable configuration changes consistent with AX behavior. Additionally, quenching experiments reveal at least two mechanisms of increased p-type doping in the dark, one decaying over 2-3 weeks and the other persisting for at least 2 months. These results provide essential insights for the application of As-doped CdTe in thin film solar cells.

  18. Size-controlled sensitivity and selectivity for the fluorometric detection of Ag+ by homocysteine capped CdTe quantum dots

    International Nuclear Information System (INIS)

    Jiao, Hangzhou; Liang, Zhenhua; Peng, Guihua; Zhang, Ling; Lin, Hengwei

    2014-01-01

    We have synthesized water dispersible CdTe quantum dots (QDs) in different sizes and with various capping reagents, and have studied the effects of their size on the sensitivity and selectivity in the fluorometric determination of metal ions, particularly of silver(I). It is found that an increase in the particle size of homocysteine-capped CdTe QDs from 1.7 nm to 3.3 nm and to 3.7 nm enhances both the sensitivity and selectivity of the determination of Ag(I) to give an ultimate limit of detection as low as 8.3 nM. This effect can partially be explained by the better passivation of surface traps on smaller sized QDs via adsorption of Ag(I), thereby decreasing the apparent detection efficiency. In addition, the presence of CdS in the CdTe QDs is likely to play a role. The study demonstrates that an improvement in sensing performance is accomplished by using QDs of fine-tuned particle sizes. Such effects are likely also to occur with other QD-based optical probes. (author)

  19. Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

  20. Environmental, health and safety issues related to the production and use of CdTe photovoltaic modules

    International Nuclear Information System (INIS)

    Moskowitz, P.D.

    1992-01-01

    This paper examines environmental, health and safety issues associated with the production and use of CdTe photovoltaic modules. Handling of Cd and Te in photovoltaic production can present hazards to health, safety and the environment. Prior recognition of these hazards can allow device manufacturers time to implement appropriate hazard management strategies. The most important health hazards are probably related to chronic low-level exposures to Cd, especially to workers in manufacturing facilities. Because of the long latency period associated with the development of health effects arising from such exposures, and the availability of environmental and biomonitoring protocols, such hazards can be monitored and controlled. The true hazard presented by CdTe is very uncertain because characterizations of its inherent biological toxicity are based on extrapolation of data from other Cd compounds. Technical and institutional mechanisms for the recycling of spent CdTe modules may be needed to ensure public acceptance of this material option and to eliminate expensive disposal costs. (author)

  1. Evaluation of K x-ray escape and crosstalk in CdTe detectors and multi-channel detectors

    International Nuclear Information System (INIS)

    Ohtsuchi, Tetsuro; Ohmori, Koichi; Tsutsui, Hiroshi; Baba, Sueki

    1995-01-01

    The simple structure of CdTe semiconductor detectors facilitates their downsizing, and their possible application to radiographic sensors has been studied. The escape of K X-rays from these detectors increases with reduction of their dimensions and affects the measurements of X- and gamma-ray spectra. K X-rays also produce crosstalk in multi-channel detectors with adjacent channels. Therefore, K X-rays which escape from the detector elements degrade both the precision of energy spectra and spatial resolution. The ratios of escape peak integrated counts to total photon counts for various sizes of CdTe single detectors were calculated for gamma rays using the Monte Carlo method. Also, escape and crosstalk ratios were simulated for the CdTe multi-channel detectors. The theoretical results were tested experimentally for 59.54-keV gamma rays from a 241 Am radioactive source. Results showed that escape ratios for single detectors were strongly dependent on element size and thickness. The escape and crosstalk ratios increased with closer channel pitch. The calculated results showed a good agreement with the experimental data. The calculations made it clear that K X-rays which escaped to neighboring channels induced crosstalk more frequently at smaller channel pitch in multichannel detectors. A radiation shielding grid which blocked incident photons between the boundary channels was also tested by experiment and by calculation. It was effective in reducing the probability of escape and crosstalk

  2. Health, safety and environmental risks from the operation of CdTe and CIS thin-film modules

    International Nuclear Information System (INIS)

    Steinberger, Hartmut

    1998-01-01

    This paper identifies the materials embedded in on a type of CIS (Copper indium diselenide) and four different types of CdTe (cadmium telluride) thin-film modules. It refers to the results of our outdoor leaching experiments on photovoltaic (PV) samples broken into small fragments. Estimations for modules accidents on the roof or in the garden of a residential house, e.g. leaching of hazardous materials into water or soil, are given. The outcomes of our estimations show some module materials released into water or oil during leaching accidents. In a worst-case scenario for CdTe modules the leached cadmium concentration in the collected water is estimated to be no higher than the German drinking water limit concentration. For the CIS module scenario the estimated leached element concentrations are about one to two orders of magnitude below the German drinking water limit concentration. For broken CIS and CdTe modules on the ground no critical increase of the natural element concentration is observed after leaching into the soil for 1 year. (Author)

  3. Development of a Schottky CdTe Medipix3RX hybrid photon counting detector with spatial and energy resolving capabilities

    Energy Technology Data Exchange (ETDEWEB)

    Gimenez, E.N., E-mail: Eva.Gimenez@diamond.ac.uk [Diamond Light Source, Harwell Campus, Oxforshire OX11 0DE (United Kingdom); Astromskas, V. [University of Surrey (United Kingdom); Horswell, I.; Omar, D.; Spiers, J.; Tartoni, N. [Diamond Light Source, Harwell Campus, Oxforshire OX11 0DE (United Kingdom)

    2016-07-11

    A multichip CdTe-Medipix3RX detector system was developed in order to bring the advantages of photon-counting detectors to applications in the hard X-ray range of energies. The detector head consisted of 2×2 Medipix3RX ASICs bump-bonded to a 28 mm×28 mm e{sup −} collection Schottky contact CdTe sensor. Schottky CdTe sensors undergo performance degrading polarization which increases with temperature, flux and the longer the HV is applied. Keeping the temperature stable and periodically refreshing the high voltage bias supply was used to minimize the polarization and achieve a stable and reproducible detector response. This leads to good quality images and successful results on the energy resolving capabilities of the system. - Highlights: • A high atomic number (CdTe sensor based) photon-counting detector was developed. • Polarization effects affected the image were minimized by regularly refreshing the bias voltage and stabilizing the temperature. • Good spatial resolution and image quality was achieved following this procedure.

  4. Interactions between N-acetyl-L-cysteine protected CdTe quantum dots and doxorubicin through spectroscopic method

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Xiupei, E-mail: xiupeiyang@163.com [Chemical Synthesis and Pollution Control Key Laboratory of Sichuan Province, Nanchong 637000 (China); College of Chemistry and Chemical Engineering, China West Normal University, Nanchong 637000 (China); Lin, Jia; Liao, Xiulin; Zong, Yingying; Gao, Huanhuan [College of Chemistry and Chemical Engineering, China West Normal University, Nanchong 637000 (China)

    2015-06-15

    Highlights: • CdTe quantum dots with the diameter of 3–5 nm were synthesized in aqueous solution. • The modified CdTe quantum dots showed well fluorescence properties. • The interaction between the CdTe quantum dots and doxorubicin (DR) was investigated. - Abstract: N-acetyl-L-cysteine protected cadmium telluride quantum dots with a diameter of 3–5 nm were synthesized in aqueous solution. The interaction between N-acetyl-L-cysteine/cadmium telluride quantum dots and doxorubicin was investigated by ultraviolet–visible absorption and fluorescence spectroscopy at physiological conditions (pH 7.2, 37 °C). The results indicate that electron transfer has occurred between N-acetyl-L-cysteine/cadmium telluride quantum dots and doxorubicin under light illumination. The quantum dots react readily with doxorubicin to form a N-acetyl-L-cysteine/cadmium telluride-quantum dots/doxorubicin complex via electrostatic attraction between the −NH{sub 3}{sup +} moiety of doxorubicin and the −COO{sup −} moiety of N-acetyl-L-cysteine/cadmium telluride quantum dots. The interaction of N-acetyl-L-cysteine/cadmium telluride-quantum dots/doxorubicin complex with bovine serum albumin was studied as well, showing that the complex might induce the conformation change of bovine serum due to changes in microenvironment of bovine serum.

  5. Interactions between N-acetyl-L-cysteine protected CdTe quantum dots and doxorubicin through spectroscopic method

    International Nuclear Information System (INIS)

    Yang, Xiupei; Lin, Jia; Liao, Xiulin; Zong, Yingying; Gao, Huanhuan

    2015-01-01

    Highlights: • CdTe quantum dots with the diameter of 3–5 nm were synthesized in aqueous solution. • The modified CdTe quantum dots showed well fluorescence properties. • The interaction between the CdTe quantum dots and doxorubicin (DR) was investigated. - Abstract: N-acetyl-L-cysteine protected cadmium telluride quantum dots with a diameter of 3–5 nm were synthesized in aqueous solution. The interaction between N-acetyl-L-cysteine/cadmium telluride quantum dots and doxorubicin was investigated by ultraviolet–visible absorption and fluorescence spectroscopy at physiological conditions (pH 7.2, 37 °C). The results indicate that electron transfer has occurred between N-acetyl-L-cysteine/cadmium telluride quantum dots and doxorubicin under light illumination. The quantum dots react readily with doxorubicin to form a N-acetyl-L-cysteine/cadmium telluride-quantum dots/doxorubicin complex via electrostatic attraction between the −NH 3 + moiety of doxorubicin and the −COO − moiety of N-acetyl-L-cysteine/cadmium telluride quantum dots. The interaction of N-acetyl-L-cysteine/cadmium telluride-quantum dots/doxorubicin complex with bovine serum albumin was studied as well, showing that the complex might induce the conformation change of bovine serum due to changes in microenvironment of bovine serum

  6. Extracellular biosynthesis of CdTe quantum dots by the fungus Fusarium oxysporum and their anti-bacterial activity

    Science.gov (United States)

    Syed, Asad; Ahmad, Absar

    2013-04-01

    The growing demand for semiconductor [quantum dots (Q-dots)] nanoparticles has fuelled significant research in developing strategies for their synthesis and characterization. They are extensively investigated by the chemical route; on the other hand, use of microbial sources for biosynthesis witnessed the highly stable, water dispersible nanoparticles formation. Here we report, for the first time, an efficient fungal-mediated synthesis of highly fluorescent CdTe quantum dots at ambient conditions by the fungus Fusarium oxysporum when reacted with a mixture of CdCl2 and TeCl4. Characterization of these biosynthesized nanoparticles was carried out by different techniques such as Ultraviolet-visible (UV-Vis) spectroscopy, Photoluminescence (PL), X-ray Diffraction (XRD), X-ray Photoelectron spectroscopy (XPS), Transmission Electron Microscopy (TEM) and Fourier Transformed Infrared Spectroscopy (FTIR) analysis. CdTe nanoparticles shows antibacterial activity against Gram positive and Gram negative bacteria. The fungal based fabrication provides an economical, green chemistry approach for production of highly fluorescent CdTe quantum dots.

  7. Identification of Ag-acceptors in $^{111}Ag^{111}Cd$ doped ZnTe and CdTe

    CERN Document Server

    Hamann, J; Deicher, M; Filz, T; Lany, S; Ostheimer, V; Strasser, F; Wolf, H; Wichert, T

    2000-01-01

    Nominally undoped ZnTe and CdTe crystals were implanted with radioactive /sup 111/Ag, which decays to /sup 111/Cd, and investigated by photoluminescence spectroscopy (PL). In ZnTe, the PL lines caused by an acceptor level at 121 meV are observed: the principal bound exciton (PBE) line, the donor-acceptor pair (DAP) band, and the two-hole transition lines. In CdTe, the PBE line and the DAP band that correspond to an acceptor level at 108 meV appear. Since the intensities of all these PL lines decrease in good agreement with the half-life of /sup 111/Ag of 178.8 h, both acceptor levels are concluded to be associated with defects containing a single Ag atom. Therefore, the earlier assignments to substitutional Ag on Zn- and Cd-lattice sites in the respective II-VI semiconductors are confirmed. The assignments in the literature of the S/sub 1/, S /sub 2/, and S/sub 3/ lines in ZnTe and the X/sub 1//sup Ag/, X/sub 2 //sup Ag//C/sub 1//sup Ag/, and C/sub 2//sup Ag/ lines in CdTe to Ag- related defect complexes are ...

  8. Observation of Hg-diffusion in CdTe using heavy ion (40MeV-O5+) backscattering

    International Nuclear Information System (INIS)

    Otake, H.; Takita, K.; Murakami, K.; Masuda, K.; Kudo, H.; Seki, S.

    1984-01-01

    Diffusion of Hg in the near-surface region of CdTe crystals was observed by means of 40MeV-O 5+ ion backscattering. CdTe crystals immersed in Hg were kept in furnace at 280 -- 340 0 C for 2 -- 240hours. The backscattering spectra of these crystals were measured. The concentration of the diffused Hg atoms in the surface reached to 4 x 10 20 cm -3 , and Hg distribution was observed up to 1.4 μm from surface. Temperature dependence of the diffusion coefficients was determined as D = 5 x 10 3 exp (-2.0 +- 0.3eV/kT) cm 2 /sec. Hg-diffusion was not observed in the case of CdTe kept in Hg with a small amount of Cd. These facts suggest that Hg diffusion is controlled by the diffusion of Cd-vacancy. A method of observing the Hg-atoms profile in the near-surface region of the semiconductor was established. (author)

  9. Investigation of bearing inner ring-cage thermal characteristics based on CdTe quantum dots fluorescence thermometry

    International Nuclear Information System (INIS)

    Yan, Ke; Yan, Bei; Li, Ben Q.; Hong, Jun

    2017-01-01

    Highlights: • A novel method for bearing inner ring/cage thermal monitoring was first presented. • Temperature rise of bearing inner ring in real work condition was obtained. • The rotation speed (6000 r/min) measured here is much higher than all the existing methods. - Abstract: A novel wireless temperature sensor and non-intrusive temperature measurement method for bearing monitoring were proposed in this paper, based on spectrum parameter analysis of CdTe quantum dots films. The CdTe QDs were synthesized and were used in constructing of a sensor film by means of Layer-by-layer Electrostatic Self-assembly method. The fluorescence spectrum properties of the sensor were characterized. At rotation speed 5000–6000 r/min, bearing cage and inner ring temperature were presented first in this paper by the CdTe QDs sensor. The results were verified by theoretical analysis and by thermocouples, with an error typically below 10% or smaller. Compared to the traditional outer ring monitoring, the measurement and monitoring of bearing rolling elements is of very importance, especially at high rotation speed.

  10. Electrical characterization of CdTe grain-boundary properties from as processed CdTe/CdS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Woods, L.M.; Robinson, G.Y. [Colorado State Univ., Fort Collins, CO (United States); Levi, D.H.; Ahrenkiel, R.K. [National Renewable Energy Lab., Golden, CO (United States); Kaydanov, V. [Colorado School of Mines, Golden, CO (United States)

    1998-09-01

    An ability to liftoff or separate the thin-film polycrystalline CdTe from the CdS, without the use of chemical etches, has enabled direct electrical characterization of the as-processed CdTe near the CdTe/CdS heterointerface. The authors use this ability to understand how a back-contact, nitric-phosphoric (NP) etch affects the grain boundaries throughout the film. Quantitative determination of the grain-boundary barrier potentials and estimates of doping density near the grain perimeter are determined from theoretical fits to measurements of the current vs. temperature. Estimates of the bulk doping are determined from high-frequency resistivity measurements. The light and dark barrier potentials change after the NP etch, and the origin of this change is postulated. Also, a variable doping density within the grains of non-etched material has been determined. These results allow a semi-quantitative grain-boundary band diagram to be drawn that should aid in determining more accurate two-dimensional models for polycrystalline CdTe solar cells.

  11. Distributed Bragg reflectors obtained by combining Se and Te compounds: Influence on the luminescence from CdTe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Rousset, J.-G., E-mail: j-g.rousset@fuw.edu.pl; Kobak, J.; Janik, E.; Slupinski, T.; Golnik, A.; Kossacki, P.; Nawrocki, M.; Pacuski, W. [Faculty of Physics, Institute of Experimental Physics, University of Warsaw, ul. Pasteura 5, PL-02-093 Warszawa (Poland); Parlinska-Wojtan, M. [Institute of Nuclear Physics, Polish Academy of Sciences, PL-31342 Krakow (Poland)

    2016-05-14

    We report on the optical properties of structures containing self assembled CdTe quantum dots (QDs) combined with Te and Se based distributed Bragg reflectors either in a half cavity geometry with a relatively broad cavity mode or in a full cavity geometry where the cavity mode is much narrower. We show that for both structures the extraction coefficient of the light emitted from the QDs ensemble is enhanced by more than one order of magnitude with respect to the QDs grown on a ZnTe buffer. However, a single QD line broadening is observed and attributed to an unintentional incorporation of Se in the vicinity of the CdTe QDs. We show that postponing the QDs growth for 24 h after the distributed Bragg reflector deposition allows recovering sharp emission lines from individual QDs. This two step growth method is proven to be efficient also for the structures with CdTe QDs containing a single Mn{sup 2+} ion.

  12. Luminous composite ultrathin films of CdTe quantum dots/silk fibroin co-assembled with layered doubled hydroxide: Enhanced photoluminescence and biosensor application

    Directory of Open Access Journals (Sweden)

    Muhammad Sohail Haroone

    2018-06-01

    Full Text Available Quantum dots (QDs luminescent films are extensively applied to optoelectronics and optical devices. However, QDs aggregation results in the quenching of their fluorescence property which limits their practical applications to a greater extent. In order to resolve this issue, 3-mercaptopropionic acid (3-MPA functionalized Cadmium Tellurium (CdTe QDs were stabilized by silk fibroin (SB and co-assembled with layered doubled hydroxide (LDH to form (QDs@SF/LDHn ultrathin films (UTFs via the layer-by-layer (LBL technique. UV–Vis absorption and fluorescence spectroscopy showed a stepwise and normal growth of the films upon increasing the number of deposition cycles. XRD and AFM studies confirmed the formation of a periodic layered structure and regular surface morphology of the thin films. As compared to (CdTe QDs/LDHnUTFs, the (CdTe QDs@SF/LDHnUTFs displayed fluorescence enhancement and longer fluorescent lifetime, both in solid states and aqueous solutions. Furthermore compared with the solution state, the fluorescence enhancement of SF-RC and SF-β are, respectively, 7 times and 17 times in the (CdTe QDs@SF/LDHn UTFs, indicating that the LDH nanosheets favor the fluorescence enhancement effect on the CdTe QDs@SF. The fabricated materials displayed fluorescence response to a biological molecule such as immune globulin, lgG. Thus, the (CdTe QDs@SF/LDHn UTFs has a potential to be used as biosensor. Keywords: CdTe quantum dots, Silk fibroin, Layered doubled hydroxide, Co-assembly, Fluorescence enhancement

  13. Reassignment of oxygen-related defects in CdTe and CdSe

    Energy Technology Data Exchange (ETDEWEB)

    Bastin, Dirk

    2015-05-22

    This thesis reassigns the O{sub Te}-V{sub Cd} complex in CdTe and the O{sub Se}-V{sub Cd} complex in CdSe to a sulfur-dioxygen complex SO{sub 2}*, and the O{sub Cd} defect in CdSe to a V{sub Cd}H{sub 2} complex using Fourier transformed infrared absorption spectroscopy. The publications of the previous complexes were investigated by theoreticians who performed first-principle calculations of theses complexes. The theoreticians ruled out the assignments and proposed alternative defects, instead. The discrepancy between the experimentally obtained and theoretically proposed defects was the motivation of this work. Two local vibrational modes located at 1096.8 (ν{sub 1}) and 1108.3 cm{sup -1} (ν{sub 2}) previously assigned to an O{sub Te}-V{sub Cd} complex are detected in CdTe single crystals doped with CdSO{sub 4} powder. Five weaker additional absorption lines accompanying ν{sub 1} and ν{sub 2} could be detected. The relative intensities of the absorption lines match a sulfur-dioxygen complex SO{sub 2}* having two configurations labeled ν{sub 1} and ν{sub 2}. A binding energy difference of 0.5±0.1 meV between the two configurations and an energy barrier of 53±4 meV separating the two configurations are determined. Uniaxial stress applied to the crystal leads to a splitting of the absorption lines which corresponds to an orthorhombic and monoclinic symmetry for ν{sub 1} and ν{sub 2}, respectively. In virgin and oxygen-doped CdSe single crystals, three local vibrational modes located at 1094.1 (γ{sub 1}), 1107.5 (γ{sub 2}), and 1126.3 cm{sup -1} (γ{sub 3}) previously attributed to an O{sub Se}-V{sub Cd} complex could be observed. The signals are accompanied by five weaker additional absorption features in their vicinity. The additional absorption lines are identified as isotope satellites of a sulfur-dioxygen complex SO{sub 2}* having three configurations γ{sub 1}, γ{sub 2}, and γ{sub 3}. IR absorption measurements with uniaxial stress applied to the

  14. Research and development of CdTe based thin film PV solar cells

    Science.gov (United States)

    Diso, Dahiru Garba

    The motivation behind this research is to bring cheap, low-cost and clean energy technologies to the society. Colossal use of fossil fuel has created noticeable pollution problems contributing to climate change and health hazards. Silicon based solar cells have dominated the market but it is cost is high due to the manufacturing process. Therefore, the way forward is to develop thin films solar cells using low-cost attractive materials, grown by cheaper, scalable and manufacturable techniques.The aim and objectives of this work is to develop low-cost, high efficiency solar cell using electrodeposition (ED) technique. The material layers include CdS and ZnTe as the window materials, while the absorber material is CdTe. Fabricating a suitable devices for solar energy conversion (i.e. glass/conducting glass/window material/absorber material/metal) structure. Traditional way of fabricating this structure is to grow window material (CdS) using chemical bath deposition (CBD) and absorber material (CdTe) using electrodeposition. However, CBD is a batch process and therefore creates large volumes of Cd-containing waste solutions each time adding high cost in manufacturing process. This research programme is therefore on development of an "All ED-solar cells" structure.Material studies were carried out using photoelectrochemical (PEC) studies, UV-Vis spectrophotometry, X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Furthermore, the electrical characterisation of fully fabricated devices was performed using current-voltage (I-V) and capacitance-voltage (C-V) measurements.This research programme has demonstrated that CdS and ZnTe window materials can be electrodeposited and used in thin film solar cell devices. The CdS electrolytic bath can be used for a period of 7 months without discarding it like in the CBD process which usually has life

  15. Reassignment of oxygen-related defects in CdTe and CdSe

    International Nuclear Information System (INIS)

    Bastin, Dirk

    2015-01-01

    This thesis reassigns the O_T_e-V_C_d complex in CdTe and the O_S_e-V_C_d complex in CdSe to a sulfur-dioxygen complex SO_2*, and the O_C_d defect in CdSe to a V_C_dH_2 complex using Fourier transformed infrared absorption spectroscopy. The publications of the previous complexes were investigated by theoreticians who performed first-principle calculations of theses complexes. The theoreticians ruled out the assignments and proposed alternative defects, instead. The discrepancy between the experimentally obtained and theoretically proposed defects was the motivation of this work. Two local vibrational modes located at 1096.8 (ν_1) and 1108.3 cm"-"1 (ν_2) previously assigned to an O_T_e-V_C_d complex are detected in CdTe single crystals doped with CdSO_4 powder. Five weaker additional absorption lines accompanying ν_1 and ν_2 could be detected. The relative intensities of the absorption lines match a sulfur-dioxygen complex SO_2* having two configurations labeled ν_1 and ν_2. A binding energy difference of 0.5±0.1 meV between the two configurations and an energy barrier of 53±4 meV separating the two configurations are determined. Uniaxial stress applied to the crystal leads to a splitting of the absorption lines which corresponds to an orthorhombic and monoclinic symmetry for ν_1 and ν_2, respectively. In virgin and oxygen-doped CdSe single crystals, three local vibrational modes located at 1094.1 (γ_1), 1107.5 (γ_2), and 1126.3 cm"-"1 (γ_3) previously attributed to an O_S_e-V_C_d complex could be observed. The signals are accompanied by five weaker additional absorption features in their vicinity. The additional absorption lines are identified as isotope satellites of a sulfur-dioxygen complex SO_2* having three configurations γ_1, γ_2, and γ_3. IR absorption measurements with uniaxial stress applied to the CdSe crystal yield a monoclinic C_1_h symmetry for γ_1 and γ_2. The SO_2* complex is stable up to 600 C. This thesis assigns the ν-lines in

  16. Studies and development of a readout ASIC for pixelated CdTe detectors for space applications

    International Nuclear Information System (INIS)

    Michalowska, A.

    2013-01-01

    The work presented in this thesis is part of a project where a new instrument is developed: a camera for hard X-rays imaging spectroscopy. It is dedicated to fundamental research for observations in astrophysics, at wavelengths which can only be observed using space-borne instruments. In this domain the spectroscopic accuracy as well as the imaging details are of high importance. This work has been realized at CEA/IRFU (Institut de Recherche sur les lois Fondamentales de l'Univers), which has a long-standing and successful experience in instruments for high energy physics and space physics instrumentation. The objective of this thesis is the design of the readout electronics for a pixelated CdTe detector, suitable for a stacked assembly. The principal parameters of this integrated circuit are a very low noise for reaching a good accuracy in X-ray energy measurement, very low power consumption, a critical parameter in space-borne applications, and a small dead area for the full system combining the detector and the readout electronics. In this work I have studied the limits of these three parameters in order to optimize the circuit. In terms of the spectral resolution, two categories of noise had to be distinguished to determine the final performance. The first is the Fano noise limit, related to detector interaction statistics, which cannot be eliminated. The second is the electronic noise, also unavoidable; however it can be minimized through optimization of the detection chain. Within the detector, establishing a small pixel pitch of 300 μm reduces the input capacitance and the dark current. This limits the effects of the electronic noise. Also in order to limit the input capacitance the future camera is designed as a stacked assembly of the detector with the readout ASIC. This allows to reach extremely good input parameters seen by the readout electronics: a capacitance in range of 0.3 pF-1 pF and a dark current below 5 pA. In the frame of this thesis I have

  17. A low-cost non-toxic post-growth activation step for CdTe solar cells

    Science.gov (United States)

    Major, J. D.; Treharne, R. E.; Phillips, L. J.; Durose, K.

    2014-07-01

    Cadmium telluride, CdTe, is now firmly established as the basis for the market-leading thin-film solar-cell technology. With laboratory efficiencies approaching 20 per cent, the research and development targets for CdTe are to reduce the cost of power generation further to less than half a US dollar per watt (ref. 2) and to minimize the environmental impact. A central part of the manufacturing process involves doping the polycrystalline thin-film CdTe with CdCl2. This acts to form the photovoltaic junction at the CdTe/CdS interface and to passivate the grain boundaries, making it essential in achieving high device efficiencies. However, although such doping has been almost ubiquitous since the development of this processing route over 25 years ago, CdCl2 has two severe disadvantages; it is both expensive (about 30 cents per gram) and a water-soluble source of toxic cadmium ions, presenting a risk to both operators and the environment during manufacture. Here we demonstrate that solar cells prepared using MgCl2, which is non-toxic and costs less than a cent per gram, have efficiencies (around 13%) identical to those of a CdCl2-processed control group. They have similar hole densities in the active layer (9 × 1014 cm-3) and comparable impurity profiles for Cl and O, these elements being important p-type dopants for CdTe thin films. Contrary to expectation, CdCl2-processed and MgCl2-processed solar cells contain similar concentrations of Mg; this is because of Mg out-diffusion from the soda-lime glass substrates and is not disadvantageous to device performance. However, treatment with other low-cost chlorides such as NaCl, KCl and MnCl2 leads to the introduction of electrically active impurities that do compromise device performance. Our results demonstrate that CdCl2 may simply be replaced directly with MgCl2 in the existing fabrication process, thus both minimizing the environmental risk and reducing the cost of CdTe solar-cell production.

  18. ABC transporters affect the elimination and toxicity of CdTe quantum dots in liver and kidney cells

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Mingli; Yin, Huancai; Bai, Pengli [CAS Key Lab of Bio-Medical Diagnostics, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences, Suzhou, Jiangsu 215163 (China); Miao, Peng [CAS Key Lab of Bio-Medical Diagnostics, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences, Suzhou, Jiangsu 215163 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Deng, Xudong [Department of Chemical Engineering, McMaster University, Hamilton, Ontario, L8S 4L7 (Canada); Xu, Yingxue [CAS Key Lab of Bio-Medical Diagnostics, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences, Suzhou, Jiangsu 215163 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Hu, Jun [CAS Key Lab of Bio-Medical Diagnostics, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences, Suzhou, Jiangsu 215163 (China); Yin, Jian, E-mail: yinj@sibet.ac.cn [CAS Key Lab of Bio-Medical Diagnostics, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences, Suzhou, Jiangsu 215163 (China)

    2016-07-15

    This paper aimed to investigate the role of adenosine triphosphate-binding cassette (ABC) transporters on the efflux and the toxicity of nanoparticles in liver and kidney cells. In this study, we synthesized CdTe quantum dots (QDs) that were monodispersed and emitted green fluorescence (maximum peak at 530 nm). Such QDs tended to accumulate in human hepatocellular carcinoma cells (HepG2), human kidney cells 2 (HK-2), and Madin-Darby canine kidney (MDCK) cells, and cause significant toxicity in all the three cell lines. Using specific inhibitors and inducers of P-glycoprotein (Pgp) and multidrug resistance associated proteins (Mrps), the cellular accumulation and subsequent toxicity of QDs in HepG2 and HK-2 cells were significantly affected, while only slight changes appeared in MDCK cells, corresponding well with the functional expressions of ABC transporters in cells. Moreover, treatment of QDs caused concentration- and time- dependent induction of ABC transporters in HepG2 and HK-2 cells, but such phenomenon was barely found in MDCK cells. Furthermore, the effects of CdTe QDs on ABC transporters were found to be greater than those of CdCl{sub 2} at equivalent concentrations of cadmium, indicating that the effects of QDs should be a combination of free Cd{sup 2+} and specific properties of QDs. Overall, these results indicated a strong dependence between the functional expressions of ABC transporters and the efflux of QDs, which could be an important reason for the modulation of QDs toxicity by ABC transporters. - Highlights: • ABC transporters contributed actively to the cellular efflux of CdTe quantum dots. • ABC transporters affected the cellular toxicity of CdTe quantum dots. • Treatment of CdTe quantum dots induced the gene expression of ABC transporters. • Free Cd{sup 2+} should be partially involved in the effects of QDs on ABC transporters. • Cellular efflux of quantum dots could be an important modulator for its toxicity.

  19. Hydrophilic ionic liquid-passivated CdTe quantum dots for mercury ion detection.

    Science.gov (United States)

    Chao, Mu-Rong; Chang, Yan-Zin; Chen, Jian-Lian

    2013-04-15

    A hydrophilic ionic liquid, 1-ethyl-3-methylimidazolium dicyanamide (EMIDCA), was used as a medium for the synthesis of highly luminescent CdTe nanocrystals (NCs) capped with thioglycolic acid (TGA). The synthesis was performed for 8 h at 130 °C, was similar to nanocrystal preparation in an aqueous medium, and used safe, low-cost inorganic salts as precursors. After the reaction, the photoluminescence quantum yield of the CdTe NCs (NC(IL-130)) prepared in EMIDCA was significantly higher than that of the nanocrystals prepared in water (NC(w)) at 100 °C (86% vs. 35%). Moreover, the emission wavelength and particle size of NC(IL-130) were smaller than NC(w) (450 nm vs. 540 nm and 4.0 nm vs. 5.2 nm, respectively). The activation of NC(IL-130) was successful due to the coordinated action of two ligands, EMIDCA and TGA, in the primary steps of the NC formation pathway. An increase or decrease in the synthesis temperature, to 160 °C or 100 °C, respectively, was detrimental to the luminescence quality. However, the quenching effect of Hg²⁺ on the fluorescence signals of the NC(IL-130) was distinctively unique, whereas certain interfering ions, such as Pb²⁺, Fe³⁺, Co²⁺, Ni²⁺, Ag⁺, and Cu²⁺, could also quench the emission of the NC(w). Based on the Perrin model, the quenching signals of NC(w) and NC(IL-130) were well correlated with the Hg²⁺ concentrations in the phosphate buffer (pH 7.5, 50 mM). In comparison with the NC(w), the NC(IL-130) had a high tolerance of the interfering ions coexisting with the Hg²⁺ analyte, high recovery of Hg²⁺ spiked in the BSA- or FBS-containing medium, and high stability of fluorescence quenching signals between trials and days. The NC(IL-130) nanocrystals can potentially be used to develop a probe system for the determination of Hg²⁺ in physiological samples. Copyright © 2012 Elsevier B.V. All rights reserved.

  20. Low energy characterization of Caliste HD, a CdTe based imaging spectrometer

    International Nuclear Information System (INIS)

    Dubos, S.; Limousin, O.; Blondel, C.; Chipaux, R.; Menesguen, Y.; Meuris, A.; Orduna, T.; Tourette, T.; Sauvageon, A.

    2012-01-01

    Caliste HD is a recently developed micro-camera designed for X and gamma-rays astronomy, based on a 1*1 cm 2 CdTe Schottky pixelated detector. Its entire surface is composed of 256 pixels, disposed on a 16*16 pixels matrix with 625 micrometers pitch. This spectrometer is buttable on its 4 sides and can be used to create a large focal plane. Caliste HD is designed for space environment and its front-end electronic has a low power consumption and excellent noise performances which can provide an extended dynamic range, from 2 keV to 1 MeV as well as excellent energy resolutions. This large spectroscopic window is suited to observe astrophysical sources for a wide range of wavelengths. Moreover, electronic noise performances of this instrument were designed to set the low level-threshold lower than 2 keV; these continuous improvements now allow studying detailed spectroscopic performances at very low energies. For this purpose, we have exposed the Caliste HD module to a mono-energetic X-rays beam, and set energies between 2 and 12 keV emphasizing the 2 to 6 keV band. We could measure accurately detections efficiencies for the lowest energies and found it to be from 43% to 75% at 2.1 keV and 11.6 keV respectively, considering only particles detected in photopeak for single events, ignoring events impinging between two adjacent pixels. Absorption edges due to the Platinum (Pt) entrance electrode have been detected, as well as other characteristics absorption edges on the efficiency curve caused by Cd and Te elements. This efficiency detection profile thereby highlights crucial effects of the Pt electrode opacity on Caliste HD low energy response, and suggests the presence of absorption zones at the interface between CdTe crystal and Platinum. Besides, using a mono-energetic beam allows fine energy resolution measurement. It has been found to be ranging from 560 and 760 eV FWHM between 2 and 12 keV. In the same way, another crucial parameter - the linearity of the

  1. A pixellated γ-camera based on CdTe detectors clinical interests and performances

    International Nuclear Information System (INIS)

    Chambron, J.; Arntz, Y.; Eclancher, B.; Scheiber, Ch.; Siffert, P.; Hage Hali, M.; Regal, R.; Kazandjian, A.; Prat, V.; Thomas, S.; Warren, S.; Matz, R.; Jahnke, A.; Karman, M.; Pszota, A.; Nemeth, L.

    2000-01-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cmx15 cm detection matrix of 2304 CdTe detector elements, 2.83 mmx2.83 mmx2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the γ-camera performances. But their use as γ detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed of 256 detectors shared in 16 modules. Each module consists in a thin ceramic plate holding a line of 16 detectors, in four groups of four for an easy replacement, and holding a special 16 channels integrated circuit designed by CLRC (UK). A detection and acquisition logic based on a DSP card and a PC has been programmed by Eurorad for spectral and counting acquisition modes. Collimators LEAP and LEHR from commercial design, mobile gantry and clinical software were provided by Siemens (Germany). The γ-camera head housing, its general mounting and the electric connections were performed by Phase Laboratory (CNRS, France). The compactness of the γ-camera head, thin detectors matrix, electronic readout and collimator, facilitates the detection of close γ sources with the advantage of a high spatial resolution. Such an equipment is intended to bedside explorations. There is a growing clinical requirement in nuclear cardiology to early assess the extent of an infarct

  2. Growth of wurtzite CdTe nanowires on fluorine-doped tin oxide glass substrates and room-temperature bandgap parameter determination

    Science.gov (United States)

    Choi, Seon Bin; Song, Man Suk; Kim, Yong

    2018-04-01

    The growth of CdTe nanowires, catalyzed by Sn, was achieved on fluorine-doped tin oxide glass by physical vapor transport. CdTe nanowires grew along the 〈0001〉 direction, with a very rare and phase-pure wurtzite structure, at 290 °C. CdTe nanowires grew under Te-limited conditions by forming SnTe nanostructures in the catalysts and the wurtzite structure was energetically favored. By polarization-dependent and power-dependent micro-photoluminescence measurements of individual nanowires, heavy and light hole-related transitions could be differentiated, and the fundamental bandgap of wurtzite CdTe at room temperature was determined to be 1.562 eV, which was 52 meV higher than that of zinc-blende CdTe. From the analysis of doublet photoluminescence spectra, the valence band splitting energy between heavy hole and light hole bands was estimated to be 43 meV.

  3. Removal of CdTe in acidic media by magnetic ion-exchange resin: A potential recycling methodology for cadmium telluride photovoltaic waste

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Teng, E-mail: zhangteng@mail.iee.ac.cn; Dong, Zebin; Qu, Fei; Ding, Fazhu; Peng, Xingyu; Wang, Hongyan; Gu, Hongwei

    2014-08-30

    Highlights: • Sulfonated magnetic microsphere was prepared as one strong acid cation-exchange resin. • Cd and Te can be removed directly from the highly acidic leaching solution of CdTe. • Good chemical stability, fast adsorbing rate and quick magnetic separation in strong acidic media. • A potential path for recycling CdTe photovoltaic waste. - Abstract: Sulfonated magnetic microspheres (PSt-DVB-SNa MPs) have been successfully prepared as adsorbents via an aqueous suspension polymerization of styrene-divinylbenzene and a sulfonation reaction successively. The resulting adsorbents were confirmed by means of Fourier transform infrared spectra (FT-IR), X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope equipped with an energy dispersive spectrometer (SEM-EDS) and vibrating sample magnetometer (VSM). The leaching process of CdTe was optimized, and the removal efficiency of Cd and Te from the leaching solution was investigated. The adsorbents could directly remove all cations of Cd and Te from a highly acidic leaching solution of CdTe. The adsorption process for Cd and Te reached equilibrium in a few minutes and this process highly depended on the dosage of adsorbents and the affinity of sulfonate groups with cations. Because of its good adsorption capacity in strong acidic media, high adsorbing rate, and efficient magnetic separation from the solution, PSt-DVB-SNa MPs is expected to be an ideal material for the recycling of CdTe photovoltaic waste.

  4. Current state-of-the-art industrial and research applications using room-temperature CdTe and CdZnTe solid state detectors

    International Nuclear Information System (INIS)

    Eisen, Y.

    1996-01-01

    Improvements of CdTe crystal quality and significant progress in the growth of large ingots of high resistivity CdZnTe material enable the fabrication of larger area detectors in single element form or monolithic arrays. These advances allow for the development of imaging devices of improved spatial resolution for industrial, research and medical applications. CdTe and CdZnTe detectors operate in single photon counting mode or in current mode (charge integrating mode). The paper presents advantages of CdTe and CdZnTe over common scintillator type detectors, but also presents the shortcomings of the former detectors with respect to charge collection which limit the yields of good spectrometers. The paper reviews industrial and research applications utilizing these detectors and in particular describes in detail two imaging systems for security screening and custom inspection. These systems are characterized by large dynamic range and good spatial resolution and are composed of large arrays of CdTe spectrometers and discriminator grade detectors. A wide energy range detector assembly, for astrophysical research of gamma ray bursts composed of CdTe, HgI 2 and CdZnTe spectrometers in two dimensional arrays is also presented. (orig.)

  5. Improved electron density through hetero-junction binary sensitized TiO2/ CdTe / D719 system as photoanode for dye sensitized solar cell

    Science.gov (United States)

    Pandey, A. K.; Ahmad, Muhammad Shakeel; Alizadeh, Mahdi; Rahim, Nasrudin Abd

    2018-07-01

    The combined effect of dual sensitization and hetero-junction symmetry has been investigated on the performance of TiO2 based dye sensitized solar cell. CdTe nanoparticles have been introduced in TiO2 matrix to function as sensitizer as well as act as hetero-junction between D719 dye and TiO2 nanoarchitecture. Four concentrations of CdTe i.e. 0.5 wt%, 2 wt%, 5 wt% and 8 wt% have been investigated. Morphological and compositional studies have been conducted using scanning electron microscope (SEM) and X-ray diffraction (XRD) respectively. Light absorption characteristics have been investigated by employing Uv-vis spectroscopy and the overall performance has been studied using solar simulator and electrochemical impedance spectroscopy (EIS). Performance has been found to be increased with the addition of CdTe due to high electron density and reduction in recombination reactions. An increase of 41.73% in incident photo conversion efficiency (IPCE) and 75.57% in short circuit current density (Jsc) have been recorded for the specimens containing 5 wt% CdTe compared to bare TiO2 based DSSCs. Further addition of CdTe leads to reduction in overall performance of DSSCs.

  6. Electroplating of CdTe Thin Films from Cadmium Sulphate Precursor and Comparison of Layers Grown by 3-Electrode and 2-Electrode Systems

    Directory of Open Access Journals (Sweden)

    Imyhamy M. Dharmadasa

    2017-01-01

    Full Text Available Electrodeposition of CdTe thin films was carried out from the late 1970s using the cadmium sulphate precursor. The solar energy group at Sheffield Hallam University has carried out a comprehensive study of CdTe thin films electroplated using cadmium sulfate, cadmium nitrate and cadmium chloride precursors, in order to select the best electrolyte. Some of these results have been published elsewhere, and this manuscript presents the summary of the results obtained on CdTe layers grown from cadmium sulphate precursor. In addition, this research program has been exploring the ways of eliminating the reference electrode, since this is a possible source of detrimental impurities, such as K+ and Ag+ for CdS/CdTe solar cells. This paper compares the results obtained from CdTe layers grown by three-electrode (3E and two-electrode (2E systems for their material properties and performance in CdS/CdTe devices. Thin films were characterized using a wide range of analytical techniques for their structural, morphological, optical and electrical properties. These layers have also been used in device structures; glass/FTO/CdS/CdTe/Au and CdTe from both methods have produced solar cells to date with efficiencies in the region of 5%–13%. Comprehensive work carried out to date produced comparable and superior devices fabricated from materials grown using 2E system.

  7. CdTe layer structures for X-ray and gamma-ray detection directly grown on the Medipix readout-chip by MBE

    Science.gov (United States)

    Vogt, A.; Schütt, S.; Frei, K.; Fiederle, M.

    2017-11-01

    This work investigates the potential of CdTe semiconducting layers used for radiation detection directly deposited on the Medipix readout-chip by MBE. Due to the high Z-number of CdTe and the low electron-hole pair creation energy a thin layer suffices for satisfying photon absorption. The deposition takes place in a modified MBE system enabling growth rates up to 10 μm/h while the UHV conditions allow the required high purity for detector applications. CdTe sensor layers deposited on silicon substrates show resistivities up to 5.8 × 108 Ω cm and a preferred (1 1 1) orientation. However, the resistivity increases with higher growth temperature and the orientation gets more random. Additionally, the deposition of a back contact layer sequence in one process simplifies the complex production of an efficient contact on CdTe with aligned work functions. UPS measurements verify a decrease of the work function of 0.62 eV induced by Te doping of the CdTe.

  8. Comparative Health Risk Assessment of CdTe Solar PV System and Nuclear Power Plant

    International Nuclear Information System (INIS)

    Lee, Sang Hun; Kang, Hyun Gook

    2014-01-01

    In terms of national energy policy decision-making process, several key factors, including low production cost, negligible risk or impact to environment and population around the facility, must be considered. The purpose of this paper is to assess the public health risk in case of postulated nuclear power plant and CdTe solar PV system accident and compare the estimated public health risk. Both systems release toxic materials to the environment which adversely affect nearby population by exposure from the inhalation and ingestion of the toxic material transported via air. By simulating the airborne transport of released toxic material using Gaussian plume model and modeling exposure pathways to nearby population, average individual health risk is assessed and public health risk per power capacity of each system is compared. The result shows that the average public health risk per power capacity of NPP is less than the case of solar PV system. This implies that NPP has lower risk in terms of public health risk in case of severe accident while it can be used as more reliable energy source than renewable energy source so that NPP would take priority over other renewable energy sources in terms of national energy policy

  9. Spectral response characterization of CdTe sensors of different pixel size with the IBEX ASIC

    Science.gov (United States)

    Zambon, P.; Radicci, V.; Trueb, P.; Disch, C.; Rissi, M.; Sakhelashvili, T.; Schneebeli, M.; Broennimann, C.

    2018-06-01

    We characterized the spectral response of CdTe sensors with different pixel sizes - namely 75, 150 and 300 μm - bonded to the latest generation IBEX single photon counting ASIC developed at DECTRIS, to detect monochromatic X-ray energy in the range 10-60 keV. We present a comparison of pulse height spectra recorded for several energies, showing the dependence on the pixel size of the non-trivial atomic fluorescence and charge sharing effects that affect the detector response. The extracted energy resolution, in terms of full width at half maximum or FWHM, ranges from 1.5 to 4 keV according to the pixel size and chip configuration. We devoted a careful analysis to the Quantum Efficiency and to the Spectral Efficiency - a newly-introduced measure that quantifies the impact of fluorescence and escape phenomena on the spectrum integrity in high- Z material based detectors. We then investigated the influence of the photon flux on the aforementioned quantities up to 180 ṡ 106 cts/s/mm2 and 50 ṡ 106 cts/s/mm2 for the 150 μm and 300 μm pixel case, respectively. Finally, we complemented the experimental data with analytical and with Monte Carlo simulations - taking into account the stochastic nature of atomic fluorescence - with an excellent agreement.

  10. Developmental toxicity of CdTe QDs in zebrafish embryos and larvae

    Energy Technology Data Exchange (ETDEWEB)

    Duan, Junchao; Yu, Yongbo [School of Public Health, Capital Medical University (China); Li, Yang [School of Public Health, Jilin University (China); Yu, Yang; Li, Yanbo; Huang, Peili; Zhou, Xianqing [School of Public Health, Capital Medical University (China); Peng, Shuangqing, E-mail: pengsq@hotmail.com [Institute of Disease Control and Prevention, Academy of Military Medical Sciences, Evaluation and Research Centre for Toxicology (China); Sun, Zhiwei, E-mail: zwsun@ccmu.edu.cn [School of Public Health, Capital Medical University (China)

    2013-07-15

    Quantum dots (QDs) have widely been used in biomedical and biotechnological applications. However, few studies focus on the assessing toxicity of QDs exposure in vivo. In this study, zebrafish embryos were treated with CdTe QDs (4 nm) during 4-96 h post-fertilization (hpf). Mortality, hatching rate, malformation, heart rate, and QDs uptake were detected. We also measured the larval behavior to analyze whether QDs had persistent effects on larvae locomotor activity at 144 hpf. The results showed that as the exposure dosages increased, the hatching rate and heart rate of zebrafish embryos were decreased, while the mortality increased. Exposure to QDs caused embryonic malformations, including head malformation, pericardial edema, yolk sac edema, bent spine, and yolk not depleted. QDs fluorescence was mainly localized in the intestines region. The larval behavior testing showed that the total swimming distance was decreased in a dose-dependent manner. The lowest dose (2.5 nM QDs) produced substantial hyperactivity while the higher doses groups (5, 10, and 20 nM QDs) elicited remarkably hypoactivity in dark periods. In summary, the data of this article indicated that QDs caused embryonic developmental toxicity, resulted in persistent effects on larval behavior.

  11. Polycrystalline CdTe Detectors A Luminosity Monitor for the LHC

    CERN Document Server

    Gschwendtner, E; Schmickler, Hermann

    2003-01-01

    The luminosity at the four interaction points of the Large Hadron Collider must be continuously monitored in order to provide an adequate tool for the control and optimization of the collision parameters and the beam optics. At both sides of the interaction points absorbers are installed to protect the super-conducting accelerator elements from quenches causes by the deposited energy of collision products. The luminosity detectors will be installed in the copper core of these absorbers to measure the electromagnetic and hadronic showers caused by neutral particles that are produced at the proton-proton collision in the interaction points. The detectors have to withstand extreme radiation levels (10^8 Gy/yr at the design luminosity) and their long-term operation has to be assured without requiring humain intervention. In addition the demand for bunch-by-bunch luminosity measurements, i.e. 40MHz detection speed, puts severe constraints on the detectors. Polycrystalline CdTe detectors have a high potential to fu...

  12. Tuning optical properties of water-soluble CdTe quantum dots for biological applications

    Energy Technology Data Exchange (ETDEWEB)

    Schulze, Anne S.; Tavernaro, Isabella; Machka, Friederike [Justus-Liebig-University Giessen, Institute of Inorganic and Analytical Chemistry (Germany); Dakischew, Olga; Lips, Katrin S. [Justus-Liebig-University Giessen, Laboratory of Experimental Trauma Surgery (Germany); Wickleder, Mathias S., E-mail: mathias.wickleder@anorg.chemie.uni-giessen.de [Justus-Liebig-University Giessen, Institute of Inorganic and Analytical Chemistry (Germany)

    2017-02-15

    In this study, two different synthetic methods in aqueous solution are presented to tune the optical properties of CdTe and CdSe semiconductor nanoparticles. Additionally, the influence of different temperatures, pressures, precursor ratios, surface ligands, bases, and core components in the synthesis was investigated with regard to the particle sizes and optical properties. As a result, a red shift of the emission and absorption maxima with increasing reaction temperature (100 to 220°C), pressure (1 to 25 bar), and different ratios of core components of alloyed semiconductor nanoparticles could be observed without a change of the particle size. An increase in particle size from 2.5 to 5 nm was only achieved by variation of the mercaptocarboxylic acid ligands in combination with the reaction time and used base. To get a first hint on the cytotoxic effects and cell uptake of the synthesized quantum dots, in vitro tests mesenchymal stem cells (MSCs) were carried out.

  13. X-ray spectroscopy and dosimetry with a portable CdTe device

    International Nuclear Information System (INIS)

    Abbene, Leonardo; La Manna, Angelo; Fauci, Francesco; Gerardi, Gaetano; Stumbo, Simone; Raso, Giuseppe

    2007-01-01

    X-ray spectra and dosimetry information are very important for quality assurance (QA) and quality control (QC) in medical diagnostic X-ray systems. An accurate knowledge of the diagnostic X-ray spectra would improve the patient dose optimization, without compromising image information. In this work, we performed direct diagnostic X-ray spectra measurements with a portable device, based on a CdTe solid-state detector. The portable device is able to directly measure X-ray spectra at high photon fluence rates, as typical of clinical radiography. We investigated on the spectral performances of the system in the mammographic energy range (up to ∼40 keV). Good system response to monoenergetic photons was measured (energy resolution of 5% FWHM at 22.1 keV). We measured the molybdenum X-ray spectra produced by a mammographic X-ray unit (GE Senographe DMR) at 28 kV and 30 kV under clinical conditions. The results showed the good reproducibility of the system and low pile-up distortions. Preliminary dosimetric measurements have been regarded as exposure and half value layer (HVL) values obtained from direct measurements and from measured X-ray spectral data, and a good agreement between exposure attenuation curves and the HVL values was obtained. The results indicated that the portable device is suitable for mammographic X-ray spectroscopy under clinical conditions

  14. Synthesis and characterization of electrochemically deposited nanocrystalline CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Ragini Raj, E-mail: raginirajsingh@gmail.com [Department of Physics, Bhopal University, Bhopal-462026 (India); Department of Physical Electronics, Iby and Aladar Fleishman Faculty of Engineering, Tel-Aviv University, Tel-Aviv-69978 (Israel); Painuly, Diksha [Centre for Nanoscience and Nanotechnology, University of Kerala, Thiruanantpuram, Kerala (India); Pandey, R.K. [Department of Physics, Bhopal University, Bhopal-462026 (India)

    2009-07-15

    Electrodeposition is emerging as a method for the synthesis of semiconductor thin films and nanostructures. In this work we prepared the nanocrystalline CdTe thin films on indium tin oxide coated glass substrate from aqueous acidic bath at the deposition temperature 50 {+-} 1 deg. C. The films were grown potentiostatically from -0.60 V to -0.82 V with respect to saturated calomel reference electrode. The structural, compositional, morphological and optical properties were investigated using X-ray diffraction (XRD), energy dispersive analysis by X-rays (EDAX), atomic force microscopy (AFM), and UV-vis spectroscopy respectively and cyclic voltammetery. The structural and optical studies revealed that films are nanocrystalline in nature and possess cubic phase, also the films are preferentially oriented along the cubic (1 1 1) plane. The effect of cadmium composition on the deposited morphology was also investigated. The size dependent blue shift in the experimentally determined absorption edge has been compared with the theoretical predictions based on the effective mass approximation and tight binding approximation. It is shown that the experimentally determined absorption edges depart from the theoretically calculated values.

  15. Developmental toxicity of CdTe QDs in zebrafish embryos and larvae

    International Nuclear Information System (INIS)

    Duan, Junchao; Yu, Yongbo; Li, Yang; Yu, Yang; Li, Yanbo; Huang, Peili; Zhou, Xianqing; Peng, Shuangqing; Sun, Zhiwei

    2013-01-01

    Quantum dots (QDs) have widely been used in biomedical and biotechnological applications. However, few studies focus on the assessing toxicity of QDs exposure in vivo. In this study, zebrafish embryos were treated with CdTe QDs (4 nm) during 4–96 h post-fertilization (hpf). Mortality, hatching rate, malformation, heart rate, and QDs uptake were detected. We also measured the larval behavior to analyze whether QDs had persistent effects on larvae locomotor activity at 144 hpf. The results showed that as the exposure dosages increased, the hatching rate and heart rate of zebrafish embryos were decreased, while the mortality increased. Exposure to QDs caused embryonic malformations, including head malformation, pericardial edema, yolk sac edema, bent spine, and yolk not depleted. QDs fluorescence was mainly localized in the intestines region. The larval behavior testing showed that the total swimming distance was decreased in a dose-dependent manner. The lowest dose (2.5 nM QDs) produced substantial hyperactivity while the higher doses groups (5, 10, and 20 nM QDs) elicited remarkably hypoactivity in dark periods. In summary, the data of this article indicated that QDs caused embryonic developmental toxicity, resulted in persistent effects on larval behavior

  16. Developmental toxicity of CdTe QDs in zebrafish embryos and larvae

    Science.gov (United States)

    Duan, Junchao; Yu, Yongbo; Li, Yang; Yu, Yang; Li, Yanbo; Huang, Peili; Zhou, Xianqing; Peng, Shuangqing; Sun, Zhiwei

    2013-07-01

    Quantum dots (QDs) have widely been used in biomedical and biotechnological applications. However, few studies focus on the assessing toxicity of QDs exposure in vivo. In this study, zebrafish embryos were treated with CdTe QDs (4 nm) during 4-96 h post-fertilization (hpf). Mortality, hatching rate, malformation, heart rate, and QDs uptake were detected. We also measured the larval behavior to analyze whether QDs had persistent effects on larvae locomotor activity at 144 hpf. The results showed that as the exposure dosages increased, the hatching rate and heart rate of zebrafish embryos were decreased, while the mortality increased. Exposure to QDs caused embryonic malformations, including head malformation, pericardial edema, yolk sac edema, bent spine, and yolk not depleted. QDs fluorescence was mainly localized in the intestines region. The larval behavior testing showed that the total swimming distance was decreased in a dose-dependent manner. The lowest dose (2.5 nM QDs) produced substantial hyperactivity while the higher doses groups (5, 10, and 20 nM QDs) elicited remarkably hypoactivity in dark periods. In summary, the data of this article indicated that QDs caused embryonic developmental toxicity, resulted in persistent effects on larval behavior.

  17. Theoretical and experimental study of α-Sn deposited on CdTe(001)

    International Nuclear Information System (INIS)

    Gomez, J.A.; Guenzburger, D.; Ellis, D.E.; Hu, M.Y.; Baggio-Saitovitc, E.M.; Passamani, E.C.; Alp, E.E.

    2003-01-01

    Gray tin films enriched by over 95% 119 Sn and grown by molecular beam epitaxy on CdTe(001) wafers are characterized by inelastic nuclear resonance spectroscopy and investigated theoretically by embedded-cluster density-functional theory methods. Experimental tin phonon densities of states are obtained via analysis of resonant scattering of the 23.88-keV nuclear transition, making use of a high-resolution spectrometer at the Advanced Photon Source. Conventional Moessbauer spectroscopy is used in the scattering mode to determine hyperfine parameters of the α-Sn phase and, after thermal treatment, the β phase. Electronic structure in the vicinity of Sn-Cd and Sn-Te interfaces is calculated in order to determine local charge transfer and changes in hyperfine parameters for 119 Sn atoms in the interface region. Although, due to sample thickness, both experiments reveal properties essentially of the bulk, the calculations allow investigation of surface and interface regions at an atomic level, thus providing complementary information. Effects of interlayer relaxation are explored.

  18. Optical properties and surface topography of CdCl2 activated CdTe thin films

    Science.gov (United States)

    Patel, S. L.; Purohit, A.; Chander, S.; Dhaka, M. S.

    2018-05-01

    The effect of post-CdCl2 heat treatment on optical properties and surface topography of evaporated CdTe thin films is investigated. The pristine and thermally annealed films were subjected to UV-Vis spectrophotometer and atomic force microscopy (AFM) to investigate the optical properties and surface topography, respectively. The absorbance is found to be maximum (˜90%) at 320°C temperature and transmittance found to be minimum and almost constant in ultraviolet and visible regions. The direct band gap is increased from 1.42 eV to 2.12 eV with post-CdCl2 annealing temperature. The surface topography revealed that the uniformity is improved with annealing temperature and average surface roughness is found in the range of 83.3-144.3 nm as well as grains have cylindrical hill-like shapes. The investigated results indicate that the post-CdCl2 treated films annealed at 320°C may be well-suitable for thin film solar cells as an absorber layer.

  19. Midgap traps related to compensation processes in CdTe alloys

    International Nuclear Information System (INIS)

    Castaldini, A.; Cavallini, A.; Fraboni, B.; Fernandez, P.; Piqueras, J.

    1997-01-01

    We study, by cathodoluminescence and junction spectroscopy methods, the deep traps located near midgap in semiconducting and semi-insulating II-VI compounds, namely, undoped CdTe, CdTe:Cl, and Cd 0.8 Zn 0.2 Te. In order to understand the role such deep levels play in the control of the electrical properties of the material, it appears necessary to determine their character, donor, or acceptor, in addition to their activation energy and capture cross section. Photoinduced-current transient spectroscopy and photo deep-level transient spectroscopy are used to investigate the semi-insulating (SI) samples, and a comparison of the complementary results obtained allows us to identify an acceptor trap, labeled H, and an electron trap, labeled E. Level H is common to all investigated compounds, while E is present only in CdTe:Cl samples. This provides clear experimental evidence of the presence of a deep trap in CdTe:Cl, which could be a good candidate for the deep donor level needed to explain the compensation process of SI CdTe:Cl. copyright 1997 The American Physical Society

  20. Evaluation of Biological Toxicity of CdTe Quantum Dots with Different Coating Reagents according to Protein Expression of Engineering Escherichia coli

    Directory of Open Access Journals (Sweden)

    Wei Xu

    2015-01-01

    Full Text Available The results obtained from toxicity assessment of quantum dots (QDs can be used to establish guidelines for the application of QDs in bioimaging. This paper focused on the design of a novel method to evaluate the toxicity of CdTe QDs using engineering Escherichia coli as a model. The toxicity of mercaptoacetic acid (MPA, glutathione (GSH, and L-cysteine (Cys capped CdTe QDs was analyzed according to the heterologous protein expression in BL21/DE3, engineering Escherichia coli extensively used for protein expression. The results showed that the MPA-CdTe QDs had more serious toxicity than the other two kinds of CdTe QDs. The microscopic images and SEM micrographs further proved that both the proliferation and the protein expression of engineering Escherichia coli were inhibited after treatment with MPA-CdTe QDs. The proposed method is important to evaluate biological toxicity of both QDs and other nanoparticles.

  1. Atomic-resolution characterization of the effects of CdCl2 treatment on poly-crystalline CdTe thin films

    Science.gov (United States)

    Paulauskas, T.; Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Chan, M. K. Y.; Klie, R. F.

    2014-08-01

    Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl2 environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl2, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

  2. Theoretical studies of the pressure-induced zinc-blende to cinnabar phase transition in CdTe and thermodynamical properties of each phase

    International Nuclear Information System (INIS)

    Brik, M.G.; Łach, P.; Karczewski, G.; Wojtowicz, T.; Kamińska, A.; Suchocki, A.

    2013-01-01

    Luminescence of CdTe quantum dots embedded in ZnTe is quenched at pressure of about 4.5 GPa in the high-pressure experiments. This pressure-induced quenching is attributed to the “zinc-blende–cinnabar” phase transition in CdTe, which was confirmed by the first-principles calculations. Theoretical analysis of the pressure at which the phase transition occurs for CdTe was performed using the CASTEP module of Materials Studio package with both generalized gradient approximation (GGA) and local density approximation (LDA). The calculated phase transition pressures are equal to about 4.4 GPa and 2.6 GPa, according to the GGA and LDA calculations, respectively, which is in a good agreement with the experimental value. Theoretically estimated value of the pressure coefficient of the band-gap luminescence in zinc-blende structure is in very good agreement with that recently measured in the QDs structures. The calculated Debye temperature, elastic constants and specific heat capacity for the zinc-blend structure agree well with the experimental data; the data for the cinnabar phase are reported here for the first time to the best of the authors' knowledge. - Highlights: • Quenching of luminescence of CdTe quantum dots embedded in ZnTe is theoretically explained. • The theoretical calculation of elastic and thermodynamic properties of CdTe by two types of ab-initio methods. • Theoretical calculations of some optical properties of CdTe under pressure in zinc-blende and cinnabar phases

  3. Ultrasensitive fluorescence immunoassay for detection of ochratoxin A using catalase-mediated fluorescence quenching of CdTe QDs

    Science.gov (United States)

    Huang, Xiaolin; Zhan, Shengnan; Xu, Hengyi; Meng, Xianwei; Xiong, Yonghua; Chen, Xiaoyuan

    2016-04-01

    Herein, for the first time we report an improved competitive fluorescent enzyme linked immunosorbent assay (ELISA) for the ultrasensitive detection of ochratoxin A (OTA) by using hydrogen peroxide (H2O2)-induced fluorescence quenching of mercaptopropionic acid-modified CdTe quantum dots (QDs). In this immunoassay, catalase (CAT) was labeled with OTA as a competitive antigen to connect the fluorescence signals of the QDs with the concentration of the target. Through the combinatorial use of H2O2-induced fluorescence quenching of CdTe QDs as a fluorescence signal output and the ultrahigh catalytic activity of CAT to H2O2, our proposed method could be used to perform a dynamic linear detection of OTA ranging from 0.05 pg mL-1 to 10 pg mL-1. The half maximal inhibitory concentration was 0.53 pg mL-1 and the limit of detection was 0.05 pg mL-1. These values were approximately 283- and 300-folds lower than those of horseradish peroxidase (HRP)-based conventional ELISA, respectively. The reported method is accurate, highly reproducible, and specific against other mycotoxins in agricultural products as well. In summary, the developed fluorescence immunoassay based on H2O2-induced fluorescence quenching of CdTe QDs can be used for the rapid and highly sensitive detection of mycotoxins or haptens in food safety monitoring.Herein, for the first time we report an improved competitive fluorescent enzyme linked immunosorbent assay (ELISA) for the ultrasensitive detection of ochratoxin A (OTA) by using hydrogen peroxide (H2O2)-induced fluorescence quenching of mercaptopropionic acid-modified CdTe quantum dots (QDs). In this immunoassay, catalase (CAT) was labeled with OTA as a competitive antigen to connect the fluorescence signals of the QDs with the concentration of the target. Through the combinatorial use of H2O2-induced fluorescence quenching of CdTe QDs as a fluorescence signal output and the ultrahigh catalytic activity of CAT to H2O2, our proposed method could be used to

  4. Spectroscopic Imaging Using Ge and CdTe Based Detector Systems for Hard X-ray Applications

    Science.gov (United States)

    Astromskas, Vytautas

    Third generation synchrotron facilities such as the Diamond Light Source (DLS) have a wide range of experiments performed for a wide range of science fields. The DLS operates at energies up to 150 keV which introduces great challenges to radiation detector technology. This work focuses on the requirements that the detector technology faces for X-ray Absorption Fine Structure (XAFS) and powder diffraction experiments in I12 and I15 beam lines, respectively. A segmented HPGe demonstrator detector with in-built charge sensitive CUBE preamplifiers and a Schottky e- collection CdTe Medipix3RX detector systems were investigated to understand the underlying mechanisms that limit spectroscopic, imaging performances and stability and to find ways to overcome or minimise those limitations. The energy resolution and stability of the Ge demonstrator detector was found to have the required characteristics for XAFS measurements. Charge sharing was identified as a limiting factor to the resolution which is going to be addressed in the future development of a full detector system as well as reductions in electronic noise and cross-talk effects. The stability study of the Schottky CdTe Medipix3RX detector showed that polarization is highly dependent on temperature, irradiation duration and incoming flux. A new pixel behaviour called tri-phase (3-P) pixel was identified and a novel method for determining optimum operational conditions was developed. The use of the 3-P pixels as a criterion for depolarization resulted in a stable performance of the detector. Furthermore, the detector was applied in powder diffraction measurement at the I15 beam line and resulted in the detector diffraction pattern matching the simulated data. CdTe Medipix3RX and HEXITEC spectroscopic imaging detectors were applied in identification and discrimination of transitional metals for security application and K-edge subtraction for medical applications. The results showed that both detectors have potential

  5. Evolution of oxygenated cadmium sulfide (CdS:O) during high-temperature CdTe solar cell fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Meysing, Daniel M.; Reese, Matthew O.; Warren, Charles W.; Abbas, Ali; Burst, James M.; Mahabaduge, Hasitha P.; Metzger, Wyatt K.; Walls, John M.; Lonergan, Mark C.; Barnes, Teresa M.; Wolden, Colin A.

    2016-12-01

    Oxygenated cadmium sulfide (CdS:O) produced by reactive sputtering has emerged as a promising alternative to conventional CdS for use as the n-type window layer in CdTe solar cells. Here, complementary techniques are used to expose the window layer (CdS or CdS:O) in completed superstrate devices and combined with a suite of materials characterization to elucidate its evolution during high temperature device processing. During device fabrication amorphous CdS:O undergoes significant interdiffusion with CdTe and recrystallization, forming CdS1-yTey nanocrystals whose Te fraction approaches solubility limits. Significant oxygen remains after processing, concentrated in sulfate clusters dispersed among the CdS1-yTey alloy phase, accounting for ~30% of the post-processed window layer based on cross-sectional microscopy. Interdiffusion and recrystallization are observed in devices with un-oxygenated CdS, but to a much lesser extent. Etching experiments suggest that the CdS thickness is minimally changed during processing, but the CdS:O window layer is reduced from 100 nm to 60-80 nm, which is confirmed by microscopy. Alloying reduces the band gap of the CdS:O window layer to 2.15 eV, but reductions in thickness and areal density improve its transmission spectrum, which is well matched to device quantum efficiency. The changes to the window layer in the reactive environments of device fabrication are profoundly different than what occurs by thermal annealing in an inert environment, which produced films with a band gap of 2.4 eV for both CdS and CdS:O. These results illustrate for the first time the significant changes that occur to the window layer during processing that are critical to the performance of CdTe solar cells.

  6. High p-Type Doping, Mobility, and Photocarrier Lifetime in Arsenic-Doped CdTe Single Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kuciauskas, Darius [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Nagaoka, Akira [Kyoto University; University of Utah; McCoy, Jedidiah [Washington State University; Scarpulla, Michael A. [University of Utah

    2018-05-08

    Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 10^16 and 10^20 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 10^17 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 10^17/cm3 range is observed for samples quenched at 200-300 degrees C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 10^16 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 10^18 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

  7. CdTe and related compounds: physics, defects, hetero- and nano-structures, crystal growth, surfaces and applications

    CERN Document Server

    Triboulet, Robert

    Almost thirty years after the remarkable monograph of K. Zanio and the numerous conferences and articles dedicated since that time to CdTe and CdZnTe, after all the significant progresses in that field and the increasing interest in these materials for several extremely attractive industrial applications, such as nuclear detectors and solar cells, the edition of a new enriched and updated monograph dedicated to these two very topical II-VI semiconductor compounds, covering all their most prominent, modern and fundamental aspects, seemed very relevant and useful.

  8. Effect of the electronic structure of the etched CdTe single crystals on the exciton radiation processes

    International Nuclear Information System (INIS)

    Tkachuk, P.M.; Tkachuk, V.Yi.; Mel'nichuk, S.V.; Kurik, M.V.

    2005-01-01

    Under optical excitation the structure of the radiation beyond fundamental absorption of the orientated CdTe single crystals caused by LO-phonon scattering processes of the electron-hole states is observed. Crystals have been doped with impurity of Cl as a result of the surface preparing by etching in Br-methanol. Electronic structure of the single crystals surface layer is identified on the basis of two-phonon radiation absorption investigation. Taking into account the modes selection rules the one and two phonon scattering mechanisms for two crystals surface orientations are determined

  9. Solar-energy conversion by combined photovoltaic converters with CdTe and CuInSe2 base layers

    International Nuclear Information System (INIS)

    Khrypunov, G. S.; Sokol, E. I.; Yakimenko, Yu. I.; Meriuts, A. V.; Ivashuk, A. V.; Shelest, T. N.

    2014-01-01

    The possibility of the combined use of bifacial thin-film solar cells based on CdTe and frontal solar cells with a CuInSe 2 base layer in tandem structures is experimentally confirmed. It is found that, for the use of bifacial solar cells based on cadmium telluride in a tandem structure, the optimal thickness of their base layer should be 1 μm. The gain in the efficiency of the tandem structure, compared with an individual CuInSe 2 -based solar cell, is 1.8% in the case of series-connected solar cells and 1.3%, for parallel-connected

  10. High short-circuit current density CdTe solar cells using all-electrodeposited semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Echendu, O.K., E-mail: oechendu@yahoo.com; Fauzi, F.; Weerasinghe, A.R.; Dharmadasa, I.M.

    2014-04-01

    CdS/CdTe and ZnS/CdTe n–n heterojunction solar cells have been fabricated using all-electrodeposited semiconductors. The best devices show remarkable high short-circuit current densities of 38.5 mAcm{sup −2} and 47.8 mAcm{sup −2}, open-circuit voltages of 630 mV and 646 mV and conversion efficiencies of 8.0% and 12.0% respectively. The major strength of these device structures lies in the combination of n–n heterojunction with a large Schottky barrier at the n-CdTe/metal back contact which provides the required band bending for the separation of photo-generated charge carriers. This is in addition to the use of a high quality n-type CdTe absorber layer with high electron mobility. The potential barrier heights estimated for these devices from the current–voltage characteristics exceed 1.09 eV and 1.13 eV for CdS/CdTe and ZnS/CdTe cells respectively. The diode rectification factors of both devices are in excess of four orders of magnitude with reverse saturation current densities of 1.0 × 10{sup −7} Acm{sup −2} and 4.0 × 10{sup −7} Acm{sup −2} respectively. These all-electrodeposited solar cell device structures are currently being studied and developed as an alternative to the well-known p–n junction structures which utilise chemical bath-deposited CdS. The preliminary material growth, device fabrication and assessment results are presented in this paper. - Highlights: • Two-electrode deposition. • High J{sub sc} Schottky barrier solar cells. • CdCl{sub 2} + CdF{sub 2} treatment.

  11. CdTe quantum dots linked to Glutathione as a bridge for protein crosslinking

    International Nuclear Information System (INIS)

    Beato-López, J.J.; Espinazo, M.L.; Fernández-Ponce, C.; Blanco, E.; Ramírez-del-Solar, M.; Domínguez, M.; García-Cózar, F.; Litrán, R.

    2017-01-01

    We have optimized a synthetic method for the preparation of water soluble CdTe quantum dots (QDs), capped with glutathione (GSH) molecules, chemically bound to the nanoparticle surface (GSH-CdTe QDs). These QDs have been prepared by a co-precipitation reaction, in the presence of GSH. Modulating the temperature (from 90 to 145 °C) and the heating time (from 1 to 9 hours) we have obtained QDs of different sizes with a narrow size distribution, high water solubility and a fluorescent emission of a relatively high quantum yield (QY). Absorption and position of the fluorescent emission band show a strong dependence on QD size. The percentage of GSH linked to the QD surface has been estimated from chemical analysis and confirmed by thermogravimetry. The capping using this peptide, via the thiol group, converts these QDs in powerful tools as biomarkers for selective, fast and sensitive imaging in Biomedicine. The ability of these QDs to be biofunctionalized with a protein (a fundamental step for their use as biological probes) has been demonstrated. Surface functionalization of QDs is the fundamental aspect in the design of QDs for biomedical applications. In this work, the GSH-CdTe QDs have been efficiently bioconjugated with a protein extract from Dermatophagoides pteronyssinus. We have demonstrated that the GSH capping is a valuable means for subsequent protein crosslinking. Based on our results, we can conclude that proteins from Dermatophagoides pteronyssinus can be linked to GSH-CdTe QDs terminal groups. These results reveal that these GSH-capped QD probes, with high fluorescent intensity and a well functionalized surface that can be crosslinked to proteins, can have potential applications in targeted cell imaging.

  12. The improvement of near-term CdTe processing and product capabilities and establishment of next-generation CdTe technology. Annual technical progress report, September 1, 1995--August 31, 1996

    Energy Technology Data Exchange (ETDEWEB)

    Kester, J.; Albright, S. [Golden Photon, Inc., CO (United States)

    1997-07-01

    The potential of photovoltaics to become a major global business enterprise still lingers outside the limits of industrial capabilities. For the Cadmium Sulfide/Cadmium Telluride (CdS/CdTe) system this potential has continued to focus on improvements in efficiency, stability, and cost reduction. This triad is the primary objective of the present subcontract with NREL entitled {open_quotes}The Improvement of Near-term CdTe Processing and Product Capabilities & Establishment of Next Generation CdTe Technology{close_quotes}. This subcontract represents an intermediate stage of NREL`s plan to assist the growth of the photovoltaic industry in overcoming the scientific and technical barriers to commercialization. This report outlines the progress that has been made during the period of August 1995 through August 1996. The objectives of this subcontract are to improve processing methods, quantify and understand efficiency improvement mechanisms, meet life-testing goals, and address cadmium safety concerns. Task and subtask goals are defined to meet these objectives in specific areas. The approach to fulfilling the subcontract goals is through a balanced plan of process improvement and mechanism identification. These are carried out and continued through monitoring under various long term and accelerated stress conditions. GPI maintains an on-going awareness of all safety related issues, can in particular, those involving cadmium.

  13. New Sunshine Program for fiscal 2000. Development of photovoltaic system commercialization technology - Development of thin-film solar cell manufacturing technology - Development of low-cost/large area module manufacturing technology (Development of high-reliability CdTe solar cell module manufacturing technology); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu, Hakumaku taiyodenchi no seizo gijutsu kaihatsu, Tei cost dai menseki mojuru seizo gijutsu kaihatsu (Koshinraisei CdTe taiyo denchi mojuru no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    Research and development was conducted for reliable CdTe solar cell modules, large in area and high in efficiency. In the study of large-area CdS thin film fabrication, a conversion efficiency of 12.5-14.2% was achieved in a cell in a large-area substrate using a mist method-aided process of continuous CdS film fabrication. In the study of large-area CdTe thin film fabrication, the optimization was studied of the base-forming CdS film fabrication conditions and of the CdTe film fabrication conditions in a method using a CdTe powder processed by dry kneading, and a conversion efficiency peak was found to exist when the CdS film thickness was in the range of 700-900 angstrom. In the fabrication of large-area submodules, a large-area substrate was taken up, and TCO (transparent conducting oxide) film was fabricated by the mist method, CdTe film by the normal pressure CSS method, electrodes by the screen printing method, and CdTe film patterns by the blast method. As the result, a conversion efficiency of 11.0% was achieved. In a cost estimation for large-area CdTe solar cell modules, 140 yen/Wp (conversion efficiency: 11.0%, annual production: 100 MW) was obtained. (NEDO)

  14. Novel patterning of CdS / CdTe thin film with back contacts for photovoltaic application

    Science.gov (United States)

    Ilango, Murugaiya Sridar; Ramasesha, Sheela K.

    2018-04-01

    The heterostructure of patterned CdS / CdTe thin films with back contact have been devised with electron beam lithography and fabricated using sputter deposition technique. The metallic contacts for n-CdS and p-CdTe are patterned such that both are placed at the bottom of the cell. This avoids losses due to contact shading and increases absorption in the window layer. Patterning of the device surface helps in increasing the junction area which can modulate the absorption of more number of photons due to total internal reflection. Computing the surface area between a planar and a patterned device has revealed 133% increase in the junction area. The physical and optical properties of the sputter-deposited CdS / CdTe layers are also presented. J- V characteristics of the solar cell showed the fill factor to be 25.9%, open circuit voltage to be 17 mV and short-circuit current density to be 113.68 A/m2. The increase in surface area is directly related to the increase in the short circuit current of the photovoltaic cell, which is observed from the results of simulated model in Atlas / Silvaco.

  15. Delayed electron relaxation in CdTe nanorods studied by spectral analysis of the ultrafast transient absorption

    Energy Technology Data Exchange (ETDEWEB)

    Kriegel, I., E-mail: ilka.kriegel@iit.it [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Scotognella, F. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); CNST of IIT@POLIMI, Via Pascoli 70/3, 20133 Milano (Italy); Soavi, G. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Brescia, R. [Department of Nanochemistry, Istituto Italiano di Tecnologia (IIT), via Morego 30, 16163 Genova (Italy); Rodríguez-Fernández, J.; Feldmann, J. [Photonics and Optoelectronics Group, Department of Physics and CeNS, Ludwig-Maximilians-Universität München, Amalienstr. 54, 80799 Munich (Germany); Nanosystems Initiative Munich (NIM), Schellingstr. 4, 80799 Munich (Germany); Lanzani, G., E-mail: guglielmo.lanzani@iit.it [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); CNST of IIT@POLIMI, Via Pascoli 70/3, 20133 Milano (Italy); Tassone, F. [CNST of IIT@POLIMI, Via Pascoli 70/3, 20133 Milano (Italy)

    2016-06-01

    Highlights: • We study the photophysics of CdTe nanorods by ultrafast absorption spectroscopy. • We fit photobleaching and photoinduced absorption features at all time delays. • Dynamics are extracted from superpositions of bleaches (Gaussians) and derivatives. • Fast non-radiative recombination and slower hole trapping processes are extracted. • A potential approach to unveil ultrafast non-radiative recombination processes. - Abstract: In transient absorption (TA) spectra, the bleach features originating from state filling are overlapped by their energy-shifted derivatives, arising from excited state energy level shifts. This makes the direct extraction of carrier dynamics from a single-wavelength time-trace misleading. Fitting TA spectra in time, as Gaussian functions and their derivative-like shifted Gaussians, allows to individually extract the real dynamics of both photobleached transitions, and their energy shifts. In CdTe nanorods (NRs) we found a delayed heating of holes due to the release of the large excess energy in the electron relaxation process. The slow hole-trapping process is consistent with a high number of surface trap states in these model NRs. Our results show that only a correct disentanglement of bleaching and energy shift contributions provides a reliable framework to extract the underlying carrier relaxation dynamics, including trapping, non-radiative recombination, and eventually carrier multiplication.

  16. Fabrication of fluorescence-based biosensors from functionalized CdSe and CdTe quantum dots for pesticide detection

    International Nuclear Information System (INIS)

    Chi Tran, Thi Kim; Vu, Duc Chinh; Thuy Ung, Thi Dieu; Nguyen, Hai Yen; Nguyen, Ngoc Hai; Dao, Tran Cao; Pham, Thu Nga; Nguyen, Quang Liem

    2012-01-01

    This paper presents the results on the fabrication of highly sensitive fluorescence biosensors for pesticide detection. The biosensors are actually constructed from the complex of quantum dots (QDs), acetylcholinesterase (AChE) and acetylthiocholine (ATCh). The biosensor activity is based on the change of luminescence from CdSe and CdTe QDs with pH, while the pH is changed with the hydrolysis rate of ATCh catalyzed by the enzyme AChE, whose activity is specifically inhibited by pesticides. Two kinds of QDs were used to fabricate our biosensors: (i) CdSe QDs synthesized in high-boiling non-polar organic solvent and then functionalized by shelling with two monolayers (2-ML) of ZnSe and eight monolayers (8-ML) of ZnS and finally capped with 3-mercaptopropionic acid (MPA) to become water soluble; and (ii) CdTe QDs synthesized in aqueous phase then shelled with CdS. For normal checks the fabricated biosensors could detect parathion methyl (PM) pesticide at very low contents of ppm with the threshold as low as 0.05 ppm. The dynamic range from 0.05 ppm to 1 ppm for the pesticide detection could be expandable by increasing the AChE amount in the biosensor. (paper)

  17. Bromine doping of CdTe and CdMnTe epitaxial layers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Waag, A. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Scholl, S. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Schierstedt, K. von (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Hommel, D. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstoff-Forschung, Stuttgart (Germany))

    1993-03-01

    We report on the n-type doping of CdTe and CdMnTe with bormine as a novel dopant material. /the thin films were grown by molecular beam epitaxy. ZnBr[sub 2] was used as a source material for the n-type doping. Free carrier concentrations at room temperature of up to 2.8x10[sup 18] cm[sup -3] could be readily obtained for both CdTe as well as CdMnTe thin films with Mn concentrations below 10%. This is to our knowledge the highest value ever obtained for the dilute magnetic semiconductor CdMnTe. For ZnBr[sub 2] source temperatures up to 60 C - corresponding to a free carrier concentration of (2-3)x10[sup 18] cm[sup -3] - the free carrier concentration of the epitaxial film increases with ZnBr[sub 2] source temperature. For higher ZnBr[sub 2] source temperatures compensation becomes dominant, which is indicated by a steep decrease of the free carrier concentration with increasing ZnBr[sub 2] source temperature. In addition the carrier mobility decreases drastically for such high dopant fluxes. A model of bromine incorporation is proposed. (orig.)

  18. Delayed electron relaxation in CdTe nanorods studied by spectral analysis of the ultrafast transient absorption

    International Nuclear Information System (INIS)

    Kriegel, I.; Scotognella, F.; Soavi, G.; Brescia, R.; Rodríguez-Fernández, J.; Feldmann, J.; Lanzani, G.; Tassone, F.

    2016-01-01

    Highlights: • We study the photophysics of CdTe nanorods by ultrafast absorption spectroscopy. • We fit photobleaching and photoinduced absorption features at all time delays. • Dynamics are extracted from superpositions of bleaches (Gaussians) and derivatives. • Fast non-radiative recombination and slower hole trapping processes are extracted. • A potential approach to unveil ultrafast non-radiative recombination processes. - Abstract: In transient absorption (TA) spectra, the bleach features originating from state filling are overlapped by their energy-shifted derivatives, arising from excited state energy level shifts. This makes the direct extraction of carrier dynamics from a single-wavelength time-trace misleading. Fitting TA spectra in time, as Gaussian functions and their derivative-like shifted Gaussians, allows to individually extract the real dynamics of both photobleached transitions, and their energy shifts. In CdTe nanorods (NRs) we found a delayed heating of holes due to the release of the large excess energy in the electron relaxation process. The slow hole-trapping process is consistent with a high number of surface trap states in these model NRs. Our results show that only a correct disentanglement of bleaching and energy shift contributions provides a reliable framework to extract the underlying carrier relaxation dynamics, including trapping, non-radiative recombination, and eventually carrier multiplication.

  19. A comparative study on fluorescence quenching of CdTe nanocrystals with a serial of polycyclic aromatic hydrocarbons

    Energy Technology Data Exchange (ETDEWEB)

    Baslak, Canan, E-mail: cananbaslak@gmail.com [Advanced Technology Research and Application Center, Selcuk University, 42075 Konya (Turkey); Department of Chemistry, Faculty of Science, Selcuk University, 42075 Konya (Turkey); Kus, Mahmut, E-mail: mahmutkus1@gmail.com [Advanced Technology Research and Application Center, Selcuk University, 42075 Konya (Turkey); Department of Chemical Engineering, Faculty of Engineering, Selcuk University, 42075 Konya (Turkey); Cengeloglu, Yunus [Department of Chemistry, Faculty of Science, Selcuk University, 42075 Konya (Turkey); Ersoz, Mustafa [Advanced Technology Research and Application Center, Selcuk University, 42075 Konya (Turkey); Department of Chemistry, Faculty of Science, Selcuk University, 42075 Konya (Turkey)

    2014-09-15

    We report sensing different polycyclic aromatic hydrocarbons (PAHs) with colloidal CdTe nanocrystals. The effect of molecular structure on quenching rate for 2-hyroxy-1-naphthaldehyde (2H–1N), 9,10-phenanthraquinone (PQ), 9-anthracenecarboxaldehyde (9-AC) and quinoline (Q) is presented. The quenching rate constants are observed to be strongly dependent on the molecular structure. PQ, consisting of two carbonyl groups, shows the highest rate constant while Q shows the worst one. Both static and dynamic quenching are simultaneously observed for PQ and 2H–1N. Therefore extended Stern–Volmer equations are used to calculate rate constants. Results showed that dynamic quenching is a dominant process. The rate constants for PQ, 2H–1N, 9-AC and Q are calculated to be 64.84, 10.73, 10.66 and 1.85 respectively. - Highlights: • We report the fluorescence quenching of colloidal CdTe nanocrystals with different polycyclic aromatic hydrocarbons. • The quenching rate constants are observed to be strongly dependent on the molecular structure. • Static and dynamic quenching are simultaneously observed. • The best quenching was observed for 9,10-phenanthraquinone.

  20. New imaging spectrometer CdTe very high spatial and spectral resolution for X and gamma astronomy

    International Nuclear Information System (INIS)

    Dubos, Sebastien

    2015-01-01

    The thesis work presented in this manuscript corresponds to the first development phase of the MC2 project, an ambitious R and D effort to realize a new type of cadmium telluride (CdTe) -based imaging spectrometer for future hard X- and gamma-rays astronomy missions. The final goal is to achieve a 300 micron-pitch pixelated detector plane hybridized with a very low noise front-end electronics for a total pixel density multiplied by 4 compared to the most advanced System recently available in the laboratory, the Caliste HD imaging spectrometer. Moreover, thanks to the joint development of readout circuits adapted to the interconnection of pixelated detectors with low capacitance and low leakage current, spectroscopic performances of such system are assumed to approach inherent limitations of the CdTe detector, especially for the lowest energies. The work was organized in parallel and complementary areas: evaluation of current Systems, feedback and identification of issues associated with the development of highly-resolved detection planes, implementation and complete characterization of a new two-dimensional ASIC specifically developed for this application, and modeling and study of the associated sensor to optimize the design of the detector pattern. Finally, a first hybrid prototype was completed and first experimental tests thereby conducted. (author) [fr

  1. Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing

    Directory of Open Access Journals (Sweden)

    Claudio Davet Gutiérrez-Lazos

    2014-06-01

    Full Text Available This work presents results of the optical and structural characterization of oleic acid-stabilized cadmium telluride nanocrystals (CdTe-NC synthesized by an organometallic route. After being cleaned, the CdTe-NC were dispersed in toluene to obtain an ink-like dispersion, which was drop-cast on glass substrate to deposit a thin film. The CdTe-NC colloidal dispersion as well as the CdTe drop-cast thin films were characterized with regard to the optical and structural properties. TEM analysis indicates that the CdTe-NC have a nearly spherical shape (3.5 nm as mean size. Electron diffraction and XRD diffraction analyses indicated the bulk-CdTe face-centered cubic structure for CdTe-NC. An additional diffraction line corresponding to the octahedral Cd3P2 was also detected as a secondary phase, which probably originates by reacting free cadmium ions with trioctylphosphine (the tellurium reducing agent. The Raman spectrum exhibits two broad bands centered at 141.6 and 162.3 cm−1, which could be associated to the TO and LO modes of cubic CdTe nanocrystals, respectively. Additional peaks located in the 222 to 324 cm−1 range, agree fairly well with the wavenumbers reported for TO modes of octahedral Cd3P2.

  2. A sensitive fluorescent nanosensor for chloramphenicol based on molecularly imprinted polymer-capped CdTe quantum dots.

    Science.gov (United States)

    Amjadi, Mohammad; Jalili, Roghayeh; Manzoori, Jamshid L

    2016-05-01

    A novel fluorescent nanosensor using molecularly imprinted silica nanospheres embedded CdTe quantum dots (CdTe@SiO2 @MIP) was developed for detection and quantification of chloramphenicol (CAP). The imprinted sensor was prepared by synthesis of molecularly imprinting polymer (MIP) on the hydrophilic CdTe quantum dots via reverse microemulsion method using small amounts of solvents. The resulting CdTe@SiO2 @MIP nanoparticles were characterized by fluorescence, UV-vis absorption and FT-IR spectroscopy and transmission electron microscopy. They preserved 48% of fluorescence quantum yield of the parent quantum dots. CAP remarkably quenched the fluorescence of prepared CdTe@SiO2 @MIP, probably via electron transfer mechanism. Under the optimal conditions, the relative fluorescence intensity of CdTe@SiO2 @MIP decreased with increasing CAP by a Stern-Volmer type equation in the concentration range of 40-500 µg L(-1). The corresponding detection limit was 5.0 µg L(-1). The intra-day and inter-day values for the precision of the proposed method were all <4%. The developed sensor had a good selectivity and was applied to determine CAP in spiked human and bovine serum and milk samples with satisfactory results. Copyright © 2015 John Wiley & Sons, Ltd.

  3. Phonon Raman spectra of colloidal CdTe nanocrystals: effect of size, non-stoichiometry and ligand exchange

    Directory of Open Access Journals (Sweden)

    Lokteva Irina

    2011-01-01

    Full Text Available Abstract Resonant Raman study reveals the noticeable effect of the ligand exchange on the nanocrystal (NC surface onto the phonon spectra of colloidal CdTe NC of different size and composition. The oleic acid ligand exchange for pyridine ones was found to change noticeably the position and width of the longitudinal optical (LO phonon mode, as well as its intensity ratio to overtones. The broad shoulder above the LO peak frequency was enhanced and sharpened after pyridine treatment, as well as with decreasing NC size. The low-frequency mode around 100 cm-1 which is commonly related with the disorder-activated acoustical phonons appears in smaller NCs but is not enhanced after pyridine treatment. Surprisingly, the feature at low-frequency shoulder of the LO peak, commonly assigned to the surface optical phonon mode, was not sensitive to ligand exchange and concomitant close packing of the NCs. An increased structural disorder on the NC surface, strain and modified electron-phonon coupling is discussed as the possible reason of the observed changes in the phonon spectrum of ligand-exchanged CdTe NCs. PACS: 63.20.-e, 78.30.-j, 78.67.-n, 78.67.Bf

  4. Ellipsometry of rough CdTe(211)B-Ge(211) surfaces grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Badano, Giacomo; Ballet, Philippe; Zanatta, Jean-Paul; Baudry, Xavier; Million, Alain; Garland, James W.

    2006-01-01

    The effect of surface roughness on the ellipsometric response of semiconductor surfaces is investigated. CdTe(211)B layers were grown on Ge(211) by molecular beam epitaxy using less than optimal growth conditions to enhance the formation of surface roughness. Their optical properties, measured by rotating-compensator ellipsometry, showed small but significant sample-to-sample differences not explainable in terms of nanometer-scale roughness. A critical-point analysis established that the critical-point structure of the dielectric function was the same for all samples. This result suggested that the observed sample-to-sample variations were due to macroscopic roughness, which scatters off-specular light into the detector, thereby causing errors. We introduced tentative corrections for off-specular reflection that fitted the observed differences and thus supported the idea that off-specular reflection was responsible for the observed differences. These results were obtained using CdTe but are easily extensible to other rough opaque materials

  5. Simple and sensitive detection method for diprophylline using glutathione-capped CdTe quantum dots as fluorescence probes

    Energy Technology Data Exchange (ETDEWEB)

    Ying, Suyan; Cui, Shumin [College of Chemistry and Life Science, Zhejiang Normal University, Jinhua 321004 (China); Wang, Weiping, E-mail: wangwp@zjnu.edu.cn [College of Chemistry and Life Science, Zhejiang Normal University, Jinhua 321004 (China); Feng, Jiuju [College of Chemistry and Life Science, Zhejiang Normal University, Jinhua 321004 (China); Chen, Jianrong [College of Geography and Environmental Science, Zhejiang Normal University, Jinhua 321004 (China)

    2014-01-15

    A simple and sensitive method for detecting diprophylline (DPP) was developed based on the fluorescence quenching of glutathione-capped CdTe quantum dots (GSH–CdTe QDs) by using diprophylline in a KH{sub 2}PO{sub 4}–Na{sub 2}HPO{sub 4} medium. Parameters affecting the quenching efficiency, including types and pH of buffer solutions as well as temperature, reaction time, adding sequence, and interfering substances, were investigated and optimized. In optimum conditions, the calibration plot of the quenched fluorescence intensity F{sub 0}/F with a DPP concentration range of 1.67×10{sup –6} mol L{sup −1} to 1.33×10{sup –5} mol L{sup −1} was linear. The detection limit (with signal to noise ratio of 3) for DPP was 2.24×10{sup –7} mol L{sup −1}. The proposed method was successfully applied for detecting DPP in human serum. The recovery of the method was in the range of 87.41% to 117.94%. Finally, the possible quenching mechanism of GSH–CdTe QDs and DPP was also discussed. -- Highlights: • Fluorescence of GSH/CdTe QDs was quenched by diprophylline in phosphate medium. • A simple and sensitive detection method for diprophylline based on fluorescence quenching was developed. • Quenching mechanism of GSH-capped CdTe QDs with diprophylline was discussed.

  6. Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions.

    Science.gov (United States)

    Ramos-Ruiz, Adriana; Wilkening, Jean V; Field, James A; Sierra-Alvarez, Reyes

    2017-08-15

    A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (<8.2% and <3.6% of added Cd and Te, respectively). On the other hand, over the course of 30days, 73% of the Cd and 21% of the Te were released to the synthetic leachate of a continuous-flow column simulating the acidic landfill phase. The dissolved Cd concentration was 3.24-fold higher than the TCLP limit (1mgL -1 ), and 650-fold higher than the maximum contaminant level established by the US-EPA for this metal in drinking water (0.005mgL -1 ). In contrast, the release of Cd and Te to the effluent of the continuous-flow column simulating the methanogenic phase of a landfill was negligible. The remarkable difference in the leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. Copyright © 2017 Elsevier B.V. All rights reserved.

  7. Synthesis of molecularly imprinted silica nanospheres embedded mercaptosuccinic acid-coated CdTe quantum dots for selective recognition of λ-cyhalothrin

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Xiao [School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013 (China); Meng, Minjia; Song, Zhilong; Gao, Lin; Li, Hongji [School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013 (China); Dai, Jiangdong; Zhou, Zhiping [School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Li, Chunxiang, E-mail: weixiaokeyan@163.com [School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013 (China); Pan, Jianming; Yu, Ping; Yan, Yongsheng [School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013 (China)

    2014-09-15

    In this study, a simple procedure for the determination of λ-cyhalothrin was reported. CdTe quantum dots (QDs) capped by molecularly imprinted polymers (MIPs) were prepared and characterized by spectrofluorometer, Fourier transform infrared spectroscopy (FTIR), transmission electron microscope (TEM) and scanning electron microscope (SEM). Mercaptosuccinic acid (MSA) was chosen as a stabilizer for CdTe QDs synthesis. The MSA stabilizer which comprises both thioglycolic acid (TGA)-like and 3-mercaptopropionic acid (MPA)-like moieties could accelerate the whole growth process of CdTe QDs comparing with TGA-like or MPA-like stabilizer. Meanwhile, the spectrofluorometer was used to evaluate the optical stability, effect of pH, and selective and sensitive determination of λ-cyhalothrin (LC). Moreover, LC could quench the fluorescence of the molecularly imprinted silica nanospheres (CdTe@SiO{sub 2}@MIPs) in a concentration-dependent manner, which was best described by a Stern–Volmer-type equation. - Highlights: • We choose Mercaptosuccinic acid (MSA) as the stabilizer for CdTe QDs synthesis. • The composite materials were prepared by the reverse microemulsion method. • The composite materials can be used for the direct analysis of relevant real samples.

  8. Elucidating PID Degradation Mechanisms and In Situ Dark I-V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules

    DEFF Research Database (Denmark)

    Hacke, Peter; Spataru, Sergiu; Johnston, Steve

    2016-01-01

    A progression of potential-induced degradation (PID) mechanisms are observed in CdTe modules, including shunting/junction degradation and two different manifestations of series resistance depending on the stress level and water ingress. The dark I-V method for in-situ characterization of Pmax bas...

  9. Improving surface smoothness and photoluminescence of CdTe(1 1 1)A on Si(1 1 1) substrates grown by molecular beam epitaxy using Mn atoms

    International Nuclear Information System (INIS)

    Wang, Jyh-Shyang; Tsai, Yu-Hsuan; Chen, Chang-Wei; Dai, Zi-Yuan; Tong, Shih-Chang; Yang, Chu-Shou; Wu, Chih-Hung; Yuan, Chi-Tsu; Shen, Ji-Lin

    2014-01-01

    Highlights: • CdTe(1 1 1)A epilayers were grown on Si(1 1 1) substrates by molecular beam epitaxy. • We report an enhanced growth using Mn atoms. • The significant improvements in surface quality and optical properties were found. - Abstract: This work demonstrates an improvement of the molecular beam epitaxial growth of CdTe(1 1 1)A epilayer on Si(1 1 1) substrates using Mn atoms. The reflection high-energy electron diffraction patterns show that the involvement of some Mn atoms in the growth of CdTe(1 1 1)A is even more effective than the use of a buffer layer with a smooth surface for forming good CdTe(1 1 1)A epilayers. 10 K Photoluminescence spectra show that the incorporation of only 2% Mn significantly reduced the intensity of defect-related emissions and considerably increased the integral intensity of exciton-related emissions by a large factor of about 400

  10. Effect of the value of bond energy on the defect formation in the samples of CdTe - HqTe system under the influence of irradiation

    International Nuclear Information System (INIS)

    Kramchenko, O.A.; Pashkovskij, N.V.

    1984-01-01

    The bonds break energy in solid solutions of the CdTe-HgTe system is calculated. The correctness of the statement that bonds strength in a chemical compound, particularly for the CdTe-HgTe system with decreases with the increase of atomic number. It is shown that in the process of transition from CdTe binary compound to solid solutions of the CdTe-HgTe system a part of Cd atoms is substituted by Hg atoms, which causes relative decrease of the number Cd-Te bonds. At the same time increased is the number of Cd-Te bonds which during irradiation break more probably than the Cd-Te bonds forming however only Frenkel close vapours annihilating during irradiation. During the experiment these defects lead to temperature region washout in which properties reconstruction at isochronous annealing begins. The beginning of annealing is shifted towards higher temperatures which has been observed in the course of investigation. X decrease for the Cdsub(x)Hgsub(1-x)Te solid solution increases the annealing temperature of radiation defects The results of theoretical calculations coincide with the experimental data and permit to confirm that the properties changes arising during irradiation of matters with weak chemical bonds can be conserved only at very low temperatures

  11. Advanced Processing of CdTe- and CuInxGa1-xSe2-Based Solar Cells: Final Report: 18 April 1995 - 31 May 1998

    International Nuclear Information System (INIS)

    Jayapalan, A.; Tetali, B.; Ferekides, C.S.; Marinskiy, D.; Morel, D.L.; Lin, H.; Sankaranarayanan, H.; Bhatt, R.; Narayanaswamy, R.; Prabhakaran, R.; Marinskaya, S.; Zafar, S.

    1999-01-01

    This report summarizes work performed by the University of South Florida Department of Electrical Engineering under this subcontract. The Cadmium telluride(CdTe) portion of this project deals with the development of high-efficiency thin-filmed CdTe solar cells using fabrication techniques that are suitable for manufacturing environments

  12. High Flux Energy-Resolved Photon-Counting X-Ray Imaging Arrays with CdTe and CdZnTe for Clinical CT

    International Nuclear Information System (INIS)

    Barber, William C.; Hartsough, Neal E.; Gandhi, Thulasidharan; Iwanczyk, Jan S.; Wessel, Jan C.; Nygard, Einar; Malakhov, Nail; Wawrzyniak, Gregor; Dorholt, Ole; Danielsen, Roar

    2013-06-01

    We have fabricated fast room-temperature energy dispersive photon counting x-ray imaging arrays using pixellated cadmium zinc (CdTe) and cadmium zinc telluride (CdZnTe) semiconductors. We have also fabricated fast application specific integrated circuits (ASICs) with a two dimensional (2D) array of inputs for readout from the CdZnTe sensors. The new CdTe and CdZnTe sensors have a 2D array of pixels with a 0.5 mm pitch and can be tiled in 2D. The new 2D ASICs have four energy discriminators per pixel with a linear energy response across the entire dynamic range for clinical CT. The ASICs can also be tiled in 2D and are designed to fit within the active area of the 2D sensors. We have measured several important performance parameters including; an output count rate (OCR) in excess of 20 million counts per second per square mm, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor less than 20 keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdTE and CdZnTe sensors incurring very little additional capacitance. We present a comparison of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, and noise floor. (authors)

  13. Preparation and characterization of bifunctional dendrimer modified Fe{sub 3}O{sub 4}/CdTe nanoparticles with both luminescent and superparamagnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xiuling, E-mail: wxling_self@163.com [Department of Chemical and Biological Engineering, Suzhou University of Science and Technology, Suzhou 215009 (China); Gu, Yinjun; Dong, Shuling [Department of Chemical and Biological Engineering, Suzhou University of Science and Technology, Suzhou 215009 (China); Zhao, Qin [School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu 226019 (China); Liu, Yongjian [Department of Chemical and Biological Engineering, Suzhou University of Science and Technology, Suzhou 215009 (China)

    2015-10-15

    Highlights: • The fluorescent superparamagnetic dendrimeric Fe{sub 3}O{sub 4}/CdTe nanoparticles are synthesized in this paper. • The synthesized nanocomposites maintain excellent magnetic properties. • The synthesized nanocomposites maintain highly luminescent markers with narrow emission bands. - Abstract: Magnetic nanoparticles Fe{sub 3}O{sub 4} were prepared by hydrothermal coprecipitation of ferric and ferrous ions using NaOH. The surface modification of Fe{sub 3}O{sub 4} nanoparticle by dendrimers has rendered the nanoparticle surface with enriched amine groups which facilitated the adsorption and conjugation of thioglycolic acid (TGA) modified CdTe quantum dots to form a stable hybrid nanostructure. Three generations (first generation: G0F, second generation: G1F, third generation: G3F) of bifunctional dendrimeric Fe{sub 3}O{sub 4}/CdTe nanoparticles were successfully prepared using this technique and characterized by microscopy. The optical and magnetic properties of the dendrimeric Fe{sub 3}O{sub 4}/CdTe nanoparticle were also investigated. The microscopic study reveals 3 different sizes for 3 generations, 16 nm (G0F), 31 nm (G1F) and 47 nm (G3F). Among three generations of nanoparticles, the G1F has the best optical property with a luminescent quantum yield of 25.6% and the G0F has the best magnetic property with a saturation magnetization of 19.3 emμ/g.

  14. Energy Band Gap, Intrinsic Carrier Concentration and Fermi Level of CdTe Bulk Crystal between 304 K and 1067 K

    Science.gov (United States)

    Su, Ching-Hua

    2007-01-01

    Optical transmission measurements were performed on CdTe bulk single crystal. It was found that when a sliced and polished CdTe wafer was used, a white film started to develop when the sample was heated above 530 K and the sample became opaque. Therefore, a bulk crystal of CdTe was first grown in the window area by physical vapor transport; the optical transmission was then measured and from which the energy band gap was derived between 304 and 1067 K. The band gaps of CdTe can be fit well as a function of temperature using the Varshini expression: Eg (e V) = 1.5860 - 5.9117xl0(exp -4) T(sup 2)/(T + 160). Using the band gap data, the high temperature electron-hole equilibrium was calculated numerically by assuming the Kane's conduction band structure and a heavy-hole parabolic valance band. The calculated intrinsic carrier concentrations agree well with the experimental data reported previously. The calculated intrinsic Fermi levels between 270 and 1200 K were also presented.

  15. Linear and mass attenuation coefficient for CdTe compound of X-rays from 10 to 100 keV energy range in different phases

    Energy Technology Data Exchange (ETDEWEB)

    Saim, A., E-mail: saim1989asma@gmail.com; Tebboune, A.; Berkok, H.; Belameiri, N.; Belbachir, A.H.

    2014-07-25

    The Full Potential Linear Muffin Tin Orbitals method within the density functional theory has been utilized to calculate structural and electronic properties of the CdTe compound. We have checked that the CdTe has two phase-transitions from zinc-blend to cinnabar and from cinnabar to rocksalt. We have found that the rigidity, the energy and the nature of the gap change according to the phase change, so we can predict that a CdTe detector may have different behaviors in different phase conditions. In order to investigate this behavior change, the linear and the mass attenuation coefficients of X-ray in rocksalt, zinc-blend and cinnabar structures are calculated from 10 keV to100 keV, using the XCOM data. We have found that when CdTe undergoes a phase transition from zinc-blend to cinnabar, its linear attenuation coefficient decreases down to a value of about 100 times smaller than its initial one, and when it undergoes a transition from cinnabar to rocksalt it increases up to a value about 90 times larger than its initial one.

  16. Cytotoxicity of CdTe quantum dots in human umbilical vein endothelial cells: the involvement of cellular uptake and induction of pro-apoptotic endoplasmic reticulum stress

    Directory of Open Access Journals (Sweden)

    Yan M

    2016-02-01

    Full Text Available Ming Yan,1,* Yun Zhang,2,* Haiyan Qin,3 Kezhou Liu,1 Miao Guo,1 Yakun Ge,1 Mingen Xu,1 Yonghong Sun,4 Xiaoxiang Zheng4 1Department of Biomedical Engineering, College of Life Information Science and Instrument Engineering, Hangzhou Dianzi University, Hangzhou, 2Basic Medical Sciences, College of Medicine, Shaoxing University, Shaoxing, 3Department of Chemistry, Zhejiang University, 4Zhejiang Provincial Key Laboratory of Cardio-Cerebral Vascular Detection Technology and Medicinal Effectiveness Appraisal, Department of Biomedical Engineering, Zhejiang University, Hangzhou, People’s Republic of China *These authors contributed equally to this work Abstract: Cadmium telluride quantum dots (CdTe QDs have been proposed to induce oxidative stress, which plays a crucial role in CdTe QDs-mediated mitochondrial-dependent apoptosis in human umbilical vein endothelial cells (HUVECs. However, the direct interactions of CdTe QDs with HUVECs and their potential impairment of other organelles like endoplasmic reticulum (ER in HUVECs are poorly understood. In this study, we reported that the negatively charged CdTe QDs (–21.63±0.91 mV, with good dispersity and fluorescence stability, were rapidly internalized via endocytosis by HUVECs, as the notable internalization could be inhibited up to 95.52% by energy depletion (NaN3/deoxyglucose or low temperature. The endocytosis inhibitors (methyl-β-cyclodextrin, genistein, sucrose, chlorpromazine, and colchicine dramatically decreased the uptake of CdTe QDs by HUVECs, suggesting that both caveolae/raft- and clathrin-mediated endocytosis were involved in the endothelial uptake of CdTe QDs. Using immunocytochemistry, a striking overlap of the internalized CdTe QDs and ER marker was observed, which indicates that QDs may be transported to ER. The CdTe QDs also caused remarkable ER stress responses in HUVECs, confirmed by significant dilatation of ER cisternae, upregulation of ER stress markers GRP78/GRP94, and

  17. Effects of CdCl2 treatment on the recrystallization and electro-optical properties of CdTe thin films

    International Nuclear Information System (INIS)

    Moutinho, H.R.; Al-Jassim, M.M.; Levi, D.H.; Dippo, P.C.; Kazmerski, L.L.

    1998-01-01

    The effects of CdCl 2 processing on the physical and electro-optical properties of CdTe were evaluated for thin films produced by physical vapor deposition and close-spaced sublimation (CSS). Two substrates (CdS and Indium - tin - oxide) were used with the physical vapor deposition (PVD) films specifically to isolate the effects of the Cd(S x Te 1-x ) alloy formed during the treatment of films deposited on CdS. The samples were analyzed by x-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence. The observed changes in microstructure were caused by recrystallization, which consisted of the nucleation and development of a new CdTe structure and subsequent grain growth. Nevertheless, for these processes to take place, it was necessary that enough lattice-strain energy was available in the films. For this reason, PVD films did recrystallize, while CSS films did not. For the first time, recrystallization was observed directly in AFM images of CdTe films and confirmed by XRD analysis, which indicated the existence of two lattice parameters in PVD samples treated at 350 degree C. For samples treated at 400 degree C, the CdCl 2 treatment improved the minority-carrier lifetime of the films by more than one order of magnitude. This improvement was attributed to the elimination of deep defect levels within the band gap of the CdTe films as a result of the treatment. The sulfur diffusion into CdTe films deposited on CdS, during the CdCl 2 treatment at 400 degree C, strongly affected the defect structure

  18. Synthesis of surface molecular imprinting polymer on SiO{sub 2}-coated CdTe quantum dots as sensor for selective detection of sulfadimidine

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Zhiping; Ying, Haiqin; Liu, Yanyan [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Xu, Wanzhen, E-mail: xwz09@ujs.edu.cn [School of the Environment and Safety Engineering, Jiangsu University, Zhenjiang 212013 (China); Yang, Yanfei; Luan, Yu [Zhenjiang Institute for Drug Control of Jiangsu Province, Zhenjiang 212003 (China); Lu, Yi; Liu, Tianshu [Zhenjiang Entry-Exit Inspection Quarantine Bureau, Zhenjiang 212008 (China); Yu, Shui [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Yang, Wenming, E-mail: ywm@ujs.edu.cn [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China)

    2017-05-15

    Highlights: • Surface molecular imprinting technology and SiO{sub 2}-coated CdTe QDs were combined to prepare a novel fluorescent sensor for selective detection of sulfadimidine. • The relative fluorescent intensity weakened in a linear way with the increasing concentration of sulfadimidine in the range of 10–60 μmol L{sup −1}. • The practical application of the fluorescent MIP sensor was evaluated by means of analyzing sulfadimidine in the real milk samples. The recoveries were at the range of 90.3–99.6% and the relative standard deviation ranged from 1.9 to 3.1%. - Abstract: This paper demonstrates a facile method to synthesize surface molecular imprinting polymer (MIP) on SiO{sub 2}-coated CdTe QDs for selective detection of sulfadimidine (SM{sub 2}). The fluorescent MIP sensor was prepared using cadmium telluride quantum dots (CdTe QDs) as the material of fluorescent signal readout, sulfadimidine as template molecule, 3-aminopropyltriethoxysilane (APTES) as functional monomer and tetraethyloxysilane (TEOS) as cross-linking agent. The CdTe cores were embed in the silicon shells by a sol-gel reaction and then the molecular imprinting layers were immobilized on the surface of the SiO{sub 2}-coated CdTe QDs. Under the optimized conditions, the relative fluorescent intensity weakened in a linear way with the increasing concentration of sulfadimidine in the range of 10–60 μmol L{sup −1}. The practical application of the fluorescent MIP sensor was evaluated by means of analyzing sulfadimidine in the real milk samples. The recoveries were at the range of 90.3–99.6% and the relative standard deviation (RSD) ranged from 1.9 to 3.1%, which indicates the successful synthesis of the fluorescent MIP sensor. This sensor provides an alternative solution for selective determination of sulfadimidine from real milk samples.

  19. A prototype small CdTe gamma camera for radioguided surgery and other imaging applications.

    Science.gov (United States)

    Tsuchimochi, Makoto; Sakahara, Harumi; Hayama, Kazuhide; Funaki, Minoru; Ohno, Ryoichi; Shirahata, Takashi; Orskaug, Terje; Maehlum, Gunnar; Yoshioka, Koki; Nygard, Einar

    2003-12-01

    Gamma probes have been used for sentinel lymph node biopsy in melanoma and breast cancer. However, these probes can provide only radioactivity counts and variable pitch audio output based on the intensity of the detected radioactivity. We have developed a small semiconductor gamma camera (SSGC) that allows visualisation of the size, shape and location of the target tissues. This study is designed to characterise the performance of the SSGC for radioguided surgery of metastatic lesions and for other imaging applications amenable to the smaller format of this prototype imaging system. The detector head had 32 cadmium telluride semiconductor arrays with a total of 1,024 pixels, and with application-specific integrated circuits (ASICs) and a tungsten collimator. The entire assembly was encased in a lead housing measuring 152 mmx166 mmx65 mm. The effective visual field was 44.8 mmx44.8 mm. The energy resolution and imaging aspects were tested. Two spherical 5-mm- and 15-mm-diameter technetium-99m radioactive sources that had activities of 0.15 MBq and 100 MBq, respectively, were used to simulate a sentinel lymph node and an injection site. The relative detectability of these foci by the new detector and a conventional scintillation camera was studied. The prototype was also examined in a variety of clinical applications. Energy resolution [full-width at half-maximum (FWHM)] for a single element at the centre of the field of view was 4.2% at 140 keV (99mTc), and the mean energy resolution of the CdTe detector arrays was approximately 7.8%. The spatial resolution, represented by FWHM, had a mean value of 1.56 +/- 0.05 mm. Simulated node foci could be visualised clearly by the SSGC using a 15-s acquisition time. In preliminary clinical tests, the SSGC successfully imaged diseases in a variety of tissues, including salivary and thyroid glands, temporomandibular joints and sentinel lymph nodes. The SSGC has significant potential for diagnosing diseases and facilitating

  20. A prototype small CdTe gamma camera for radioguided surgery and other imaging applications

    Energy Technology Data Exchange (ETDEWEB)

    Tsuchimochi, Makoto; Hayama, Kazuhide [Department of Oral and Maxillofacial Radiology, The Nippon Dental University School of Dentistry at Niigata, 1-8 Hamaura-cho, 951-8580, Niigata (Japan); Sakahara, Harumi [Department of Radiology, Hamamatsu University School of Medicine, Hamamatsu (Japan); Funaki, Minoru; Ohno, Ryoichi; Shirahata, Takashi [Acrorad Co. Ltd., Tokyo (Japan); Orskaug, Terje; Maehlum, Gunnar; Yoshioka, Koki; Nygard, Einar [Integrated Detector and Electronics A.S (IDE AS), Hovik (Norway)

    2003-12-01

    Gamma probes have been used for sentinel lymph node biopsy in melanoma and breast cancer. However, these probes can provide only radioactivity counts and variable pitch audio output based on the intensity of the detected radioactivity. We have developed a small semiconductor gamma camera (SSGC) that allows visualisation of the size, shape and location of the target tissues. This study is designed to characterise the performance of the SSGC for radioguided surgery of metastatic lesions and for other imaging applications amenable to the smaller format of this prototype imaging system. The detector head had 32 cadmium telluride semiconductor arrays with a total of 1,024 pixels, and with application-specific integrated circuits (ASICs) and a tungsten collimator. The entire assembly was encased in a lead housing measuring 152 mm x 166 mm x 65 mm. The effective visual field was 44.8 mm x 44.8 mm. The energy resolution and imaging aspects were tested. Two spherical 5-mm- and 15-mm-diameter technetium-99m radioactive sources that had activities of 0.15 MBq and 100 MBq, respectively, were used to simulate a sentinel lymph node and an injection site. The relative detectability of these foci by the new detector and a conventional scintillation camera was studied. The prototype was also examined in a variety of clinical applications. Energy resolution [full-width at half-maximum (FWHM)] for a single element at the centre of the field of view was 4.2% at 140 keV ({sup 99m}Tc), and the mean energy resolution of the CdTe detector arrays was approximately 7.8%. The spatial resolution, represented by FWHM, had a mean value of 1.56{+-}0.05 mm. Simulated node foci could be visualised clearly by the SSGC using a 15-s acquisition time. In preliminary clinical tests, the SSGC successfully imaged diseases in a variety of tissues, including salivary and thyroid glands, temporomandibular joints and sentinel lymph nodes. The SSGC has significant potential for diagnosing diseases and

  1. A prototype small CdTe gamma camera for radioguided surgery and other imaging applications

    International Nuclear Information System (INIS)

    Tsuchimochi, Makoto; Hayama, Kazuhide; Sakahara, Harumi; Funaki, Minoru; Ohno, Ryoichi; Shirahata, Takashi; Orskaug, Terje; Maehlum, Gunnar; Yoshioka, Koki; Nygard, Einar

    2003-01-01

    Gamma probes have been used for sentinel lymph node biopsy in melanoma and breast cancer. However, these probes can provide only radioactivity counts and variable pitch audio output based on the intensity of the detected radioactivity. We have developed a small semiconductor gamma camera (SSGC) that allows visualisation of the size, shape and location of the target tissues. This study is designed to characterise the performance of the SSGC for radioguided surgery of metastatic lesions and for other imaging applications amenable to the smaller format of this prototype imaging system. The detector head had 32 cadmium telluride semiconductor arrays with a total of 1,024 pixels, and with application-specific integrated circuits (ASICs) and a tungsten collimator. The entire assembly was encased in a lead housing measuring 152 mm x 166 mm x 65 mm. The effective visual field was 44.8 mm x 44.8 mm. The energy resolution and imaging aspects were tested. Two spherical 5-mm- and 15-mm-diameter technetium-99m radioactive sources that had activities of 0.15 MBq and 100 MBq, respectively, were used to simulate a sentinel lymph node and an injection site. The relative detectability of these foci by the new detector and a conventional scintillation camera was studied. The prototype was also examined in a variety of clinical applications. Energy resolution [full-width at half-maximum (FWHM)] for a single element at the centre of the field of view was 4.2% at 140 keV ( 99m Tc), and the mean energy resolution of the CdTe detector arrays was approximately 7.8%. The spatial resolution, represented by FWHM, had a mean value of 1.56±0.05 mm. Simulated node foci could be visualised clearly by the SSGC using a 15-s acquisition time. In preliminary clinical tests, the SSGC successfully imaged diseases in a variety of tissues, including salivary and thyroid glands, temporomandibular joints and sentinel lymph nodes. The SSGC has significant potential for diagnosing diseases and facilitating

  2. Blood group antigen studies using CdTe quantum dots and flow cytometry

    Directory of Open Access Journals (Sweden)

    Cabral Filho PE

    2015-07-01

    Full Text Available Paulo E Cabral Filho,1 Maria IA Pereira,1 Heloise P Fernandes,2 Andre A de Thomaz,3 Carlos L Cesar,3 Beate S Santos,4 Maria L Barjas-Castro,2 Adriana Fontes1 1Departamento de Biofísica e Radiobiologia, Universidade Federal de Pernambuco, Recife, Pernambuco, 2Centro de Hematologia e Hemoterapia, Universidade Estadual de Campinas, Instituto Nacional de Ciência e Tecnologia do Sangue, Campinas, São Paulo, 3Departamento de Eletrônica Quântica, Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, Campinas, São Paulo, 4Departamento de Ciências Farmacêuticas, Universidade Federal de Pernambuco, Recife, PE, Brazil Abstract: New methods of analysis involving semiconductor nanocrystals (quantum dots [QDs] as fluorescent probes have been highlighted in life science. QDs present some advantages when compared to organic dyes, such as size-tunable emission spectra, broad absorption bands, and principally exceptional resistance to photobleaching. Methods applying QDs can be simple, not laborious, and can present high sensibility, allowing biomolecule identification and quantification with high specificity. In this context, the aim of this work was to apply dual-color CdTe QDs to quantify red blood cell (RBC antigen expression on cell surface by flow cytometric analysis. QDs were conjugated to anti-A or anti-B monoclonal antibodies, as well as to the anti-H (Ulex europaeus I lectin, to investigate RBCs of A1, B, A1B, O, A2, and Aweak donors. Bioconjugates were capable of distinguishing the different expressions of RBC antigens, both by labeling efficiency and by flow cytometry histogram profile. Furthermore, results showed that RBCs from Aweak donors present fewer amounts of A antigens and higher amounts of H, when compared to A1 RBCs. In the A group, the amount of A antigens decreased as A1 > A3 > AX = Ael, while H antigens were AX = Ael > A1. Bioconjugates presented stability and remained active for at least 6 months. In conclusion

  3. CdTe and CdSe quantum dots: synthesis, characterizations and applications in agriculture

    International Nuclear Information System (INIS)

    Ung, Thi Dieu Thuy; Tran, Thi Kim Chi; Pham, Thu Nga; Nguyen, Quang Liem; Nguyen, Duc Nghia; Dinh, Duy Khang

    2012-01-01

    This paper highlights the results of the whole work including the synthesis of highly luminescent quantum dots (QDs), characterizations and testing applications of them in different kinds of sensors. Concretely, it presents: (i) the successful synthesis of colloidal CdTe and CdSe QDs, their core/shell structures with single- and/or double-shell made by CdS, ZnS or ZnSe/ZnS; (ii) morphology, structural and optical characterizations of the synthesized QDs; and (iii) testing examples of QDs as the fluorescence labels for agricultural-bio-medical objects (for tracing residual pesticide in agricultural products, residual clenbuterol in meat/milk and for detection of H5N1 avian influenza virus in breeding farms). Overall, the results show that the synthesized QDs have very good crystallinity, spherical shape and strongly emit at the desired wavelengths between ∼500 and 700 nm with the luminescence quantum yield (LQY) of 30–85%. These synthesized QDs were used in fabrication of the three testing fluorescence QD-based sensors for the detection of residual pesticides, clenbuterol and H5N1 avian influenza virus. The specific detection of parathion methyl (PM) pesticide at a content as low as 0.05 ppm has been realized with the biosensors made from CdTe/CdS and CdSe/ZnSe/ZnS QDs and the acetylcholinesterase (AChE) enzymes. Fluorescence resonance energy transfer (FRET)-based nanosensors using CdTe/CdS QDs conjugated with 2-amino-8-naphthol-6-sulfonic acid were fabricated that enable detection of diazotized clenbuterol at a content as low as 10 pg ml −1 . For detection of H5N1 avian influenza virus, fluorescence biosensors using CdTe/CdS QDs bound on the surface of chromatophores extracted and purified from bacteria Rhodospirillum rubrum were prepared and characterized. The specific detection of H5N1 avian influenza virus in the range of 3–50 ng μl −1 with a detection limit of 3 ng μL −1 has been performed based on the antibody-antigen recognition. (review)

  4. X-ray diffraction study of epitaxial heterostructures of II-VI CdTe and ZnTe semiconductors; Etude par diffraction de rayons X d`heterostructures epitaxiees a base des semi-conducteurs II-VI CdTe et ZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Bouchet-Boudet, N.

    1996-10-07

    This work deals with the structural study of II-VI semiconductor (CdTe and ZnTe) heterostructures by X-ray diffraction and reflectivity. These heterostructures have a high lattice parameter misfit and are grown by Molecular Beam Epitaxy. Two main subjects are developed: the characterization of ZnTe wires, grown by step propagation on a CdTe (001) vicinal surface, and the study of the vertical correlations in Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattices and superlattices made of ZnTe fractional layers spaced by CdTe. The growth of organised system is up to date; its aim is to realize quantum boxes (or wires) superlattices which are laterally and vertically ordered. The deformation along the growth axis induced by a ZnTe fractional layer inserted in a CdTe matrix is modelled, in the kinematical approximation, to reproduce the reflectivity measured around the substrate (004) Bragg peak. The lateral periodicity of the wires, deposited on a vicinal surface is a new and difficult subject. Some results are obtained on a vertical superlattice grown on a 1 deg. mis-cut surface. The in-plane and out-of-plane correlation lengths of a Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattice are deduced from the diffused scattered intensity measured at grazing incidence. The calculations are made within the `distorted Wave Born Approximation`. The vertical correlation in ZnTe boxes (or wines) superlattices can be measured around Bragg peaks. It is twice bigger in a superlattice grown on a 2 deg. mis-cut substrate than a nominal one. (author). 74 refs.

  5. Size-selective precipitation in colloidal semiconductor nanocrystals of CdTe and CdSe: a study by UV-VIS spectroscopy; Precipitacao seletiva de tamanhos em nanoparticulas semicondutoras coloidais de CdTe e CdSe: um estudo por espectroscopia UV-VIS

    Energy Technology Data Exchange (ETDEWEB)

    Viol, Livia Cristina de Souza; Silva, Fernanda Oliveira; Ferreira, Diego Lourenconi; Alves, Jose Luiz Aarestrup; Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.b [Universidade Federal de Sao Joao del Rei, MG (Brazil). Dept. de Ciencias Naturais

    2011-07-01

    The post-preparative size-selective precipitation technique was applied in CdTe and CdSe semiconductor nanocrystals prepared via colloidal route in water. The synthesis of CdTe and CdSe nanoparticles and the effect of the post-preparative size-selective precipitation have been characterized mainly by mean of ultraviolet and visible absorption spectroscopy (UV-Vis). It was demonstrated that the size-selective precipitation are able to isolate particles of different sizes and purify the nanoparticles as well. (author)

  6. Dose and time effect of CdTe quantum dots on antioxidant capacities of the liver and kidneys in mice

    Directory of Open Access Journals (Sweden)

    Wang J

    2017-09-01

    Full Text Available Jilong Wang,1,2,* Hubo Sun,1,2,* Peijun Meng,1,2 Mengmeng Wang,1,2 Mi Tian,3 Yamin Xiong,1,2 Xueying Zhang,1,2 Peili Huang1,2 1School of Public Health, Capital Medical University, 2Beijing Key Laboratory of Environmental Toxicology, 3Medical Experiment and Test Center, Capital Medical University, Beijing, People’s Republic of China *These authors contributed equally to this work Abstract: Although quantum dot (QD-induced toxicity occurs due to free radicals, generation of oxidative stress mediated by reactive oxygen species (ROS formation is considered an important mechanism. However, free radical mechanisms are essentially difficult to elucidate at the molecular level because most biologically relevant free radicals are highly reactive and short-lived, making them difficult to directly detect, especially in vivo. Antioxidants play an important role in preventing or, in most cases, limiting the damage caused by ROS. Healthy people and animals possess many endogenous antioxidative substances that scavenge free radicals in vivo to maintain the redox balance and genome integrity. The antioxidant capacity of an organism is highly important but seldom studied. In this study, the dose and time effects of CdTe QDs on the antioxidant capacities of the liver and kidneys were investigated in mice using the electron paramagnetic resonance (EPR spin-trapping technique. We found that the liver and kidneys of healthy mice contain specific antioxidant capacities that scavenge ·OH and ·O2-. Furthermore, oxidative stress markers (superoxide dismutase [SOD], catalase [CAT], glutathione peroxidase [GPx], glutathione [GSH] and malondialdehyde [MDA] were examined. In dose course studies, the free radical scavenging efficiencies of the liver and kidneys were found to gradually decrease with increasing concentration of CdTe QD exposure. The activities and levels of SOD, CAT, GPx and MDA were observed to increase in treated groups, whereas those of GSH were reduced

  7. A framework for technological learning in the supply chain: A case study on CdTe photovoltaics

    International Nuclear Information System (INIS)

    Bergesen, Joseph D.; Suh, Sangwon

    2016-01-01

    Highlights: • A framework for technological learning in the supply chain is proposed. • This framework separates learning effects on value added and intermediate inputs. • Supply-chain learning can project both changing environmental impacts and costs. • Learning upstream in the supply chain can influence observed learning rates. • An example for CdTe photovoltaics illustrates how this framework can be implemented. - Abstract: Accounting for technological changes and innovation is important when assessing the implications of rapidly-developing greenhouse gas (GHG) mitigation technologies. Technological learning curves have been commonly used as a tool to understand technological change as a function of cumulative production. Traditional learning curve approaches, however, do not distinguish the direct and upstream, supply chain technological changes by which cost reductions are achieved. While recent advances in learning curves have focused on distinguishing the different physical and economic drivers of learning, forecasted technological changes have not been applied to estimate the potential changes in the environmental performance of a technology. This article illustrates how distinguishing the different effects of technological learning throughout the supply chain can help assess the changing costs, environmental impacts and natural resource implications of technologies as they develop. We propose a mathematical framework to distinguish the effects of learning on the direct inputs to a technology from the effects of learning on value added, and we incorporate those effects throughout the supply chain of a technology using a life cycle assessment (LCA) framework. An example for cadmium telluride (CdTe) photovoltaics (PV) illustrates how the proposed framework can be implemented. Results show that that life cycle GHG emissions can decrease at least 40% and costs can decrease at least 50% as cumulative production of CdTe reaches 100 GW. Technological

  8. Preparation of Films and Sources for 4{pi} Counting; Prigotovlenie dlya 4{pi}-scheta plenok i istochnikov

    Energy Technology Data Exchange (ETDEWEB)

    Konstantinov, A. A.; Sazonova, T. E. [Vsesojuznyj Nauchno - Isledovatel' skij Institut Im. D.I. Mendeleeva, Leningrad, SSSR (Russian Federation)

    1967-03-15

    To obtain a high degree of accuracy in determining the specific activity of sources by the absolute counting of particles with a 4{pi} counter, attention must be paid to the preparation of the radioactive sources. At the Mendeleev Institute of Metrology, celluloid films (surface density 8-10 {mu}/cm{sup 2}) coated on both sides with gold (10-15 {mu}g/cm{sup 2} ) or palladium (5-6 {mu}g/cm{sup 2}) are used as the bases of the radioactive sources. In order to reduce the correction for absorption of beta particles in the radioactive deposit, the base is specially treated with insulin. The authors present an extremely sensitive and effective method, employing the electron-capture nuclide {sup 54}Mn ({sup 54}Cr), for determining the uniform distribution of the active layer over the entire insulintreated surface. A solution of {sup 54}Mn ({sup 54}Cr) salt was applied to the insulin-tteated film, and the source of {sup 54}Cr ({sup 54}Mn) Auger K electrons thus obtained was investigated with the help of a proportional 4{pi} counter. The total number of {sup 54}Cr ({sup 54}Mn) Auger K electrons from the source was 8-12% less than the fluorescence coefficient (calculated from the number of {sup 54}Cr ({sup 54}Mn) K X-quanta emitted by the source) and the number of K electrons absorbed in the film (determined by the 'sandwich' method). From the differences, for insulintreated and untreated {sup 54}Mn ({sup 54}Cr) sources, between the calculated and recorded number of Auger electrons it is possible to reach a definite conclusion regarding the quality of the insulin treatment. (author) [Russian] Dlja poluchenija vysokoj tochnosti izmerenij pri opredelenii udel'noj aktivnosti istochnikov metodom absoljutnogo scheta chastic s pomoshh'ju 4{pi}- schetchika, bol'shoe vnimanie dolzhno byt' udeleno prigotovleniju radioaktivnyh istochnikov. Vo VNIIM v kachestve podlozhek radioaktivnyh istochnikov ispol'zujutsja celluloidnye plenki (poverhnostnaja plot- nost' 8-10 mkg/sm{sup 2} ) , metallizirovannye s obeih storon zolotom (10 - 15 mkg/sm{sup 2}) ili palladiem (5 - 6 mkg/sm2 ) . Dlja umen'shenija popravki na pogloshhenie 8-chastic v sloe radioaktivnogo osadka primenjaetsja special'naja obrabotka podlozhki insulinom. Predlozhen ochen' chuvstvitel'nyj i jeffektivnyj metod dlja opredelenija ravno- mernosti nanesenija aktivnogo osadka po vsej obrabotannoj insulinom ploshhadi istoch- nika s ispol'zovaniem jelektronno-zahvatnogo nuklida marganec-54 (hrom-54). Na plenku, obrabotannuju insulinom, nanosilsja rastvor soli marganec-54 (hrom-54); poluchennyj istochnik K-jelektronov Ozhe hrom-54 (marganec-54) issledovalsja v proporcional'nom 4l- schetchike. Obshhee chislo K-jelektronov Ozhe hrom-54 (marganec-54), kotorye vyhodili iz istochnika, bylo men'she na 8-12% znachenija, rasschitannogo na osnovanii chisla KH-kvantov hroma-54 (marganec-54), ispuskaemyh istochnikom, kojef- ficienta fluorescencii i chisla K-jelektronov, pogloshhennyh v plenke, kotoroe oprede- ljalos' metodom {sup s}jendvicha{sup .} Ishodja iz raznostej mezhdu raschetnym i zaregistriro- vannym chislo'm jelektronov Ozhe dlja istochnikov marganec-54 (hrom-54), obrabotannyh in- sulinom i neobrabotannyh, mozhno odnoznachno sudit' o kachestve obrabotki insulinom istochnikov. (author)

  9. Thin film CdTe based neutron detectors with high thermal neutron efficiency and gamma rejection for security applications

    Energy Technology Data Exchange (ETDEWEB)

    Smith, L.; Murphy, J.W. [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Kim, J. [Korean Research Institute of Standards and Science, Daejeon 305-600 (Korea, Republic of); Rozhdestvenskyy, S.; Mejia, I. [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Park, H. [Korean Research Institute of Standards and Science, Daejeon 305-600 (Korea, Republic of); Allee, D.R. [Flexible Display Center, Arizona State University, Phoenix, AZ 85284 (United States); Quevedo-Lopez, M. [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Gnade, B., E-mail: beg031000@utdallas.edu [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States)

    2016-12-01

    Solid-state neutron detectors offer an alternative to {sup 3}He based detectors, but suffer from limited neutron efficiencies that make their use in security applications impractical. Solid-state neutron detectors based on single crystal silicon also have relatively high gamma-ray efficiencies that lead to false positives. Thin film polycrystalline CdTe based detectors require less complex processing with significantly lower gamma-ray efficiencies. Advanced geometries can also be implemented to achieve high thermal neutron efficiencies competitive with silicon based technology. This study evaluates these strategies by simulation and experimentation and demonstrates an approach to achieve >10% intrinsic efficiency with <10{sup −6} gamma-ray efficiency.

  10. Water-Soluble N-Acetyl-L-cysteine-Capped CdTe Quantum Dots Application for Hg(II Detection

    Directory of Open Access Journals (Sweden)

    Tianming Yang

    2013-01-01

    Full Text Available A simple, rapid, and specific method for Hg(II detection has been proposed based on the fluorescence change of N-acetyl-L-cysteine-capped CdTe quantum dots (QDs. The presence of Hg(II ions could quench the fluorescence of QDs at 565 nm and meanwhile produce new peak in 700–860 nm wavelength range. The linear response range is 20–430 nM with the detection limit at 8.0 nM Hg(II. It was found that the position of the new peak was irrelevant to the size of QDs. Furthermore, the mechanism of the quenching of QDs fluorescence by Hg(II and the appearance of new peak in near-infrared area were also discussed and deduced through ultraviolet absorption spectrum, fluorescence spectrum, and X-ray photoelectron spectrum.

  11. Biocompatible fluorescence-enhanced ZrO2-CdTe quantum dot nanocomposite for in vitro cell imaging

    Science.gov (United States)

    Lu, Zhisong; Zhu, Zhihong; Zheng, Xinting; Qiao, Yan; Guo, Jun; Li, Chang Ming

    2011-04-01

    With advances of quantum dots (QDs) in bioimaging applications, various materials have been used to coat QDs to reduce their nanotoxicity; however, the coating could introduce new toxic sources and quench the fluorescence in bioimaging applications. In this work, ZrO2, an excellent ceramic material with low extinction coefficient and good biocompatibility, is utilized to coat CdTe QDs for the first time. Experimental results show that ZrO2-QD nanocomposites with the size of ~ 30 nm possess enhanced fluorescence emission, lower nanotoxicity and gradually increased fluorescence under 350 nm light illumination. After functionalization with folic acid, they were applied to label cultured HeLa cells effectively. Therefore, the ZrO2-QD nanocomposites could be promising biocompatible nanomaterials with strong fluorescence emission to replace or complement QDs in biomedical applications.

  12. Biocompatible fluorescence-enhanced ZrO2-CdTe quantum dot nanocomposite for in vitro cell imaging

    International Nuclear Information System (INIS)

    Lu Zhisong; Zhu Zhihong; Zheng Xinting; Qiao Yan; Li Changming; Guo Jun

    2011-01-01

    With advances of quantum dots (QDs) in bioimaging applications, various materials have been used to coat QDs to reduce their nanotoxicity; however, the coating could introduce new toxic sources and quench the fluorescence in bioimaging applications. In this work, ZrO 2 , an excellent ceramic material with low extinction coefficient and good biocompatibility, is utilized to coat CdTe QDs for the first time. Experimental results show that ZrO 2 -QD nanocomposites with the size of ∼ 30 nm possess enhanced fluorescence emission, lower nanotoxicity and gradually increased fluorescence under 350 nm light illumination. After functionalization with folic acid, they were applied to label cultured HeLa cells effectively. Therefore, the ZrO 2 -QD nanocomposites could be promising biocompatible nanomaterials with strong fluorescence emission to replace or complement QDs in biomedical applications.

  13. Effect of deviation from stoichiometry on the nature of shallow acceptor states in CdTe crystals

    International Nuclear Information System (INIS)

    Agrinskaya, N.V.; Shashkova, V.V.

    1988-01-01

    Photoconductivity and photoluminescence spectra in the region of donor-acceptor recombination of pure CdTe crystals, grown under conditions of different deviations from stoichiometry are investigated. It is shown that the predominant type of minor acceptors in n-type crystals (with Cd excess) differs from acceptors in p-type crystals (with Te excess). Residual acceptors replacing Te(P, As) prevail in n-type crystals and acceptors replacing Cd(Li, Na) prevail in p-type crystals. As a result of p-type crystal annealing a change of the type of prevailing aceptors accurs in Cd pairs (bands linked with P, As prevail) which testifies to the residual impurity reconstruction in Cd and Te sublattices

  14. A pH dependence study of CdTe quantum dots fluorescence quantum yields using eclipsing thermal lens spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Estupiñán-López, C. [Laboratory of Biomedical Optics and Imaging, Federal University of Pernambuco, Recife, PE (Brazil); Dominguez, C. Tolentino [Laboratory of Biomedical Optics and Imaging, Federal University of Pernambuco, Recife, PE (Brazil); Centre for Telecommunication Studies, Pontifical Catholic University of Rio de Janeiro, Rio de Janeiro, RJ (Brazil); Filho, P.E. Cabral [Laboratory of Biomedical Optics and Imaging, Federal University of Pernambuco, Recife, PE (Brazil); Biophysics and Radiobiology Department, Federal University of Pernambuco, Recife, PE (Brazil); Santos, B.S. [Laboratory of Biomedical Optics and Imaging, Federal University of Pernambuco, Recife, PE (Brazil); Pharmaceutical Sciences Department, Federal University of Pernambuco, Recife, PE (Brazil); Fontes, A., E-mail: adriana.fontes.biofisica@gmail.com [Laboratory of Biomedical Optics and Imaging, Federal University of Pernambuco, Recife, PE (Brazil); Biophysics and Radiobiology Department, Federal University of Pernambuco, Recife, PE (Brazil); Araujo, R.E. de, E-mail: renato.earaujo@ufpe.br [Laboratory of Biomedical Optics and Imaging, Federal University of Pernambuco, Recife, PE (Brazil)

    2016-06-15

    In this study we evaluated the absolute fluorescence quantum yield (Φ) of hydrophilic CdTe QDs in function of different pHs, modified from the alkaline to acid, by using two different chemicals compounds, the mercaptosuccinic acid (MSA-the stabilizing agent of the QDs synthesis) or hydrochloric acid (HCl). The pH control of QDs suspensions is essential for the use of fluorescent nanoparticles in biological systems. We used the eclipsing thermal lens spectroscopy technique to determine the absolute fluorescence quantum yield values. The results showed variations on the Φ values as a function of the pH, which allowed a better understanding of QDs emission characteristics, establishing parameters for their use in biomedical applications such as optical images of biological systems, immunoassays, flow cytometry, biosensors and others.

  15. L-cysteine-capped CdTe QD-based sensor for simple and selective detection of trinitrotoluene

    International Nuclear Information System (INIS)

    Chen Yufang; Chen Zhang; He Yejuan; Lin Hailan; Sheng Pengtao; Liu Chengbin; Luo Shenglian; Cai Qingyun

    2010-01-01

    Trinitrotoluene, usually known as TNT, is a kind of chemical explosive with hazardous and toxic effects on the environment and human health. National and societal security concerns have dictated an increasing need for the analytical detection of TNT with rapidity, high sensitivity and low cost. This work demonstrates a novel method using L-cysteine-capped CdTe quantum dots (QDs) to assay TNT, based on the formation of a Meisenheimer complex between TNT and cysteine. The fluorescence (FL) of quantum dots quench because electrons of the QDs transfer to the TNT molecules via the formation of a Meisenheimer complex. TNT can be detected with a low detection limit of 1.1 nM. Studies on the selectivity of this method show that only TNT can generate an intense signal response. The synthesized QDs are excellent nanomaterials for TNT detection. In addition, TNT in soil samples is also analyzed by the proposed method.

  16. Atomic and electronic structure of the CdTe(111)B–(2√3 × 4) orthogonal surface

    Energy Technology Data Exchange (ETDEWEB)

    Bekenev, V. L., E-mail: bekenev@ipms.kiev.ua; Zubkova, S. M. [National Academy of Sciences of Ukraine, Frantsevych Institute for Problems of Materials Science (Ukraine)

    2017-01-15

    The atomic and electronic structure of four variants of Te-terminated CdTe(111)B–(2√3 × 4) orthogonal polar surface (ideal, relaxed, reconstructed, and reconstructed with subsequent relaxation) are calculated ab initio for the first time. The surface is modeled by a film composed of 12 atomic layers with a vacuum gap of ~16 Å in the layered superlattice approximation. To close Cd dangling bonds on the opposite side of the film, 24 fictitious hydrogen atoms with a charge of 1.5 electrons each are added. Ab initio calculations are performed using the Quantum Espresso program based on density functional theory. It is demonstrated that relaxation leads to splitting of the four upper layers. The band energy structures and total and layer-by-layer densities of electronic states for the four surface variants are calculated and analyzed.

  17. Synthesis and Properties of Water-Soluble Blue-Emitting Mn-Alloyed CdTe Quantum Dots

    Science.gov (United States)

    Tynkevych, Olena; Karavan, Volodymyr; Vorona, Igor; Filonenko, Svitlana; Khalavka, Yuriy

    2018-05-01

    In this work, we prepared CdTe quantum dots, and series of Cd1-xMnxTe-alloyed quantum dots with narrow size distribution by an ion-exchange reaction in water solution. We found that the photoluminescence peaks are shifted to higher energies with the increasing Mn2+ content. So far, this is the first report of blue-emitting CdTe-based quantum dots. By means of cyclic voltammetry, we detected features of electrochemical activity of manganese energy levels formed inside the Cd1-xMnxTe-alloyed quantum dot band gap. This allowed us to estimate their energy position. We also demonstrate paramagnetic behavior for Cd1-xMnxTe-alloyed quantum dots which confirmed the successful ion-exchange reaction.

  18. Determination of a natural valence-band offset - The case of HgTe and CdTe

    Science.gov (United States)

    Shih, C. K.; Spicer, W. E.

    1987-01-01

    A method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structures of semiconductors is proposed. The HgTe-CdTe system is used as an example in which it is found that the valence-band maximum of HgTe lies 0.35 + or - 0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the X-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication on the heterojunction band lineup and the electronic structures of semiconductor alloys, are discussed.

  19. Fluorescence biosensor based on CdTe quantum dots for specific detection of H5N1 avian influenza virus

    Science.gov (United States)

    Hoa Nguyen, Thi; Dieu Thuy Ung, Thi; Hien Vu, Thi; Tran, Thi Kim Chi; Quyen Dong, Van; Khang Dinh, Duy; Liem Nguyen, Quang

    2012-09-01

    This report highlights the fabrication of fluorescence biosensors based on CdTe quantum dots (QDs) for specific detection of H5N1 avian influenza virus. The core biosensor was composed of (i) the highly luminescent CdTe/CdS QDs, (ii) chromatophores extracted from bacteria Rhodospirillum rubrum, and (iii) the antibody of β-subunit. This core part was linked to the peripheral part of the biosensor via a biotin-streptavidin-biotin bridge and finally connected to the H5N1 antibody to make it ready for detecting H5N1 avian influenza virus. Detailed studies of each constituent were performed showing the image of QDs-labeled chromatophores under optical microscope, proper photoluminescence (PL) spectra of CdTe/CdS QDs, chromatophores and the H5N1 avian influenza viruses.

  20. Synthesis and Properties of Water-Soluble Blue-Emitting Mn-Alloyed CdTe Quantum Dots.

    Science.gov (United States)

    Tynkevych, Olena; Karavan, Volodymyr; Vorona, Igor; Filonenko, Svitlana; Khalavka, Yuriy

    2018-05-02

    In this work, we prepared CdTe quantum dots, and series of Cd 1-x Mn x Te-alloyed quantum dots with narrow size distribution by an ion-exchange reaction in water solution. We found that the photoluminescence peaks are shifted to higher energies with the increasing Mn 2+ content. So far, this is the first report of blue-emitting CdTe-based quantum dots. By means of cyclic voltammetry, we detected features of electrochemical activity of manganese energy levels formed inside the Cd 1-x Mn x Te-alloyed quantum dot band gap. This allowed us to estimate their energy position. We also demonstrate paramagnetic behavior for Cd 1-x Mn x Te-alloyed quantum dots which confirmed the successful ion-exchange reaction.

  1. Biocompatible fluorescence-enhanced ZrO{sub 2}-CdTe quantum dot nanocomposite for in vitro cell imaging

    Energy Technology Data Exchange (ETDEWEB)

    Lu Zhisong; Zhu Zhihong; Zheng Xinting; Qiao Yan; Li Changming [School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, 637457 (Singapore); Guo Jun, E-mail: ecmli@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, 639798 (Singapore)

    2011-04-15

    With advances of quantum dots (QDs) in bioimaging applications, various materials have been used to coat QDs to reduce their nanotoxicity; however, the coating could introduce new toxic sources and quench the fluorescence in bioimaging applications. In this work, ZrO{sub 2}, an excellent ceramic material with low extinction coefficient and good biocompatibility, is utilized to coat CdTe QDs for the first time. Experimental results show that ZrO{sub 2}-QD nanocomposites with the size of {approx} 30 nm possess enhanced fluorescence emission, lower nanotoxicity and gradually increased fluorescence under 350 nm light illumination. After functionalization with folic acid, they were applied to label cultured HeLa cells effectively. Therefore, the ZrO{sub 2}-QD nanocomposites could be promising biocompatible nanomaterials with strong fluorescence emission to replace or complement QDs in biomedical applications.

  2. Numerical dataset for analyzing the performance of a highly efficient ultrathin film CdTe solar cell

    Directory of Open Access Journals (Sweden)

    Rucksana Safa Sultana

    2017-06-01

    Full Text Available The article comprises numerical data of distinct semiconductor materials applied in the sketch of a CdTe absorber based ultrathin film solar cell. Additionally, the contact layer parametric values of the cell have been described also. Therefore, the simulation has been conducted with data related to the hetero-structured (n-ZnO/n-CdS/p-CdTe/p-ZnTe semiconductor device and a J–V characteristics curve was obtained. The operating conditions have also been recorded. Afterward, the solar cell performance parameters such as open circuit voltage (Voc, short circuit current density (Jsc, fill factor (FF, and efficiency (η have been investigated and compared with reference cell.

  3. Diffusion of Cd and Te adatoms on CdTe(111) surfaces: A computational study using density functional theory

    Energy Technology Data Exchange (ETDEWEB)

    Naderi, Ebadollah, E-mail: enaderi42@gmail.com [Department of Physics, Savitribai Phule Pune University (SPPU), Pune-411007 (India); Nanavati, Sachin [Center for Development of Advanced Computing (C-DAC), SPPU campus, Pune 411007 (India); Majumder, Chiranjib [Chemistry Division, Bhabha Atomic Research Center, Mumbai, 400085 (India); Ghaisas, S. V. [Department of Electronic Science, Savitribai Phule Pune University (SPPU), Pune-411007 (India); Department of Physics, Savitribai Phule Pune University (SPPU), Pune-411007 (India)

    2015-01-15

    CdTe is one of the most promising semiconductor for thin-film based solar cells. Here we report a computational study of Cd and Te adatom diffusion on the CdTe (111) A-type (Cd terminated) and B-type (Te terminated) surfaces and their migration paths. The atomic and electronic structure calculations are performed under the DFT formalism and climbing Nudge Elastic Band (cNEB) method has been applied to evaluate the potential barrier of the Te and Cd diffusion. In general the minimum energy site on the surface is labeled as A{sub a} site. In case of Te and Cd on B-type surface, the sub-surface site (a site just below the top surface) is very close in energy to the A site. This is responsible for the subsurface accumulation of adatoms and therefore, expected to influence the defect formation during growth. The diffusion process of adatoms is considered from A{sub a} (occupied) to A{sub a} (empty) site at the nearest distance. We have explored three possible migration paths for the adatom diffusion. The adatom surface interaction is highly dependent on the type of the surface. Typically, Te interaction with both type (5.2 eV for A-type and 3.8 eV for B-type) is stronger than Cd interactions(2.4 eV for B-type and 0.39 eV for A-type). Cd interaction with the A-type surface is very weak. The distinct behavior of the A-type and B-type surfaces perceived in our study explain the need of maintaining the A-type surface during growth for smooth and stoichiometric growth.

  4. Diffusion of Cd and Te adatoms on CdTe(111) surfaces: A computational study using density functional theory

    Science.gov (United States)

    Naderi, Ebadollah; Nanavati, Sachin; Majumder, Chiranjib; Ghaisas, S. V.

    2015-01-01

    CdTe is one of the most promising semiconductor for thin-film based solar cells. Here we report a computational study of Cd and Te adatom diffusion on the CdTe (111) A-type (Cd terminated) and B-type (Te terminated) surfaces and their migration paths. The atomic and electronic structure calculations are performed under the DFT formalism and climbing Nudge Elastic Band (cNEB) method has been applied to evaluate the potential barrier of the Te and Cd diffusion. In general the minimum energy site on the surface is labeled as Aa site. In case of Te and Cd on B-type surface, the sub-surface site (a site just below the top surface) is very close in energy to the A site. This is responsible for the subsurface accumulation of adatoms and therefore, expected to influence the defect formation during growth. The diffusion process of adatoms is considered from Aa (occupied) to Aa (empty) site at the nearest distance. We have explored three possible migration paths for the adatom diffusion. The adatom surface interaction is highly dependent on the type of the surface. Typically, Te interaction with both type (5.2 eV for A-type and 3.8 eV for B-type) is stronger than Cd interactions(2.4 eV for B-type and 0.39 eV for A-type). Cd interaction with the A-type surface is very weak. The distinct behavior of the A-type and B-type surfaces perceived in our study explain the need of maintaining the A-type surface during growth for smooth and stoichiometric growth.

  5. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

    International Nuclear Information System (INIS)

    Eisen, Y.; Shor, A.; Mardor, I.

    1999-01-01

    CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used planar detectors. The following review paper is divided into three parts: The first part discusses detector contact configurations for enhancing photopeak efficiencies and the single carrier collection approach which leads to improved energy resolutions and photopeak efficiencies at high gamma ray energies. The second part demonstrates excellent spectroscopic results using thick CdZnTe segmented monolithic pad and strip detectors showing energy resolutions less than 2% FWHM at 356 keV gamma rays. The third part discusses advantages and disadvantages of CdTe and CdZnTe detectors in imaging systems and describes new developments for medical diagnostics imaging systems

  6. Development of a 32-detector CdTe matrix for the SVOM ECLAIRs X/Gamma camera: Preliminary results

    Energy Technology Data Exchange (ETDEWEB)

    Lacombe, K., E-mail: karine.lacombe@irap.omp.eu [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Nasser, G.; Amoros, C.; Atteia, J.-L.; Barret, D. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Billot, M. [CNES, 18 Av. Edouard Belin, 31 401 Toulouse Cedex 9 (France); Cordier, B.; Gevin, O. [CEA, IRFU, 91191 Gif-sur-Yvette (France); Godet, O. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Gonzalez, F. [CNES, 18 Av. Edouard Belin, 31 401 Toulouse Cedex 9 (France); Houret, B.; Landé, J. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Lugiez, F. [CEA, IRFU, 91191 Gif-sur-Yvette (France); Mandrou, P.; Martin, J.-A.; Marty, W. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Mercier, K. [CNES, 18 Av. Edouard Belin, 31 401 Toulouse Cedex 9 (France); Pons, R.; Rambaud, D.; Ramon, P. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); and others

    2013-12-21

    ECLAIRs, a 2D coded-mask imaging telescope on the Sino-French SVOM space mission, will detect and locate gamma-ray bursts (GRBs) between 4 and 150 keV. The detector array is an assembly of 6400 Schottky CdTe detectors of size 4×4×1 mm{sup 3}, biased from −100 V to −600 V and operated at −20 °C to minimize the leakage current and maximize the polarization time. The remarkable low-energy threshold is achieved through various steps: an extensive detectors selection, a low-noise 32 channels ASIC study, and the design of an innovative detection module called XRDPIX formed by a thick film ceramic holding 32 detectors, a high voltage grid and an HTCC substrate housing the ASIC within a hermetic cavity. In this paper, we describe the XRDPIX module and explain the results of first tests to measure the linearity and compare the sources of noise, such as leakage currents and the Equivalent Noise Charge (ENC) measured on ASIC Ceramics. We confront these values with the energy threshold and spectral resolution made with dedicated test benches. Finally, we present the superposition of 32 calibrated spectra of one XRDPIX module, showing the excellent homogeneity of the 32 detectors and the achievement of a detection threshold at 4 keV over the entire module. -- Highlights: •We develop X and gamma rays detection modules to shape a space telescope. •The main goal of 4 keV threshold is reached thanks to a new hybrid based on CdTe. •Great spectral performance depends on low equivalent noise charge of ASIC on ceramics. •We study the good linearity of the calibration curve below the 16 keV energy. •An outgassing stage will decrease the leakage current of detectors glued on ceramics.

  7. Novel {beta}-cyclodextrin modified CdTe quantum dots as fluorescence nanosensor for acetylsalicylic acid and metabolites

    Energy Technology Data Exchange (ETDEWEB)

    Algarra, M. [Centro de Geologia do Porto, Faculdade de Ciencias, Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto (Portugal); Campos, B.B.; Aguiar, F.R.; Rodriguez-Borges, J.E. [Centro de Investigacao em Quimica (CIQ-UP), Faculdade de Ciencias da Universidade do Porto, Rua do Campo Alegre 687, 169-007 Porto (Portugal); Esteves da Silva, J.C.G., E-mail: jcsilva@fc.up.pt [Centro de Investigacao em Quimica (CIQ-UP), Faculdade de Ciencias da Universidade do Porto, Rua do Campo Alegre 687, 169-007 Porto (Portugal)

    2012-05-01

    {beta}-Cyclodextrin was modified with 11-[(ethoxycarbonyl)thio]undecanoic acid and used as a capping agent, together with mercaptosuccinic acid, to prepare water-stable CdTe quantum dots. The water soluble quantum dot obtained displays fluorescence with a maximum emission at 425 nm (under excitation at 300 nm) with lifetimes of 0.53, 4.8, 181, and 44.1 ns, respectively. The S-{beta}CD-MSA-CdTe can act as a nanoprobe that is due to the affinity of the cyclodextrin moiety for selected substances such as acetylsalicylic acid (ASA) and its metabolites as foreign species. The fluorescence of the S-{beta}CD-MSA-CdTe is enhanced on addition of ASA. Linear calibration plots are observed with ASA in concentrations between 0 and 1 mg/l, with a limit of detection at 8.5 Multiplication-Sign 10{sup -9} mol/l (1.5 ng/ml) and a precision as relative standard deviation of 1% (0.05 mg/l). The interference effect of certain compounds as ascorbic acid and its main metabolites such as salicylic, gentisic and salicyluric acid upon the obtained procedure was studied. Highlights: Black-Right-Pointing-Pointer Nanosensors constituted by CdTe quantum dots capped with modified cyclodextrin. Black-Right-Pointing-Pointer This nanomaterial shows fluorescence properties compatible with a semiconductor quantum dot. Black-Right-Pointing-Pointer The nanosensor shows fluorescence enhancement when inclusion complexes are formed with acetylsalicylic acid. Black-Right-Pointing-Pointer This nanomaterial has nanosensor potential taking into consideration the formation stability of the inclusion complex.

  8. Diffusion of Cd and Te adatoms on CdTe(111) surfaces: A computational study using density functional theory

    International Nuclear Information System (INIS)

    Naderi, Ebadollah; Nanavati, Sachin; Majumder, Chiranjib; Ghaisas, S. V.

    2015-01-01

    CdTe is one of the most promising semiconductor for thin-film based solar cells. Here we report a computational study of Cd and Te adatom diffusion on the CdTe (111) A-type (Cd terminated) and B-type (Te terminated) surfaces and their migration paths. The atomic and electronic structure calculations are performed under the DFT formalism and climbing Nudge Elastic Band (cNEB) method has been applied to evaluate the potential barrier of the Te and Cd diffusion. In general the minimum energy site on the surface is labeled as A a site. In case of Te and Cd on B-type surface, the sub-surface site (a site just below the top surface) is very close in energy to the A site. This is responsible for the subsurface accumulation of adatoms and therefore, expected to influence the defect formation during growth. The diffusion process of adatoms is considered from A a (occupied) to A a (empty) site at the nearest distance. We have explored three possible migration paths for the adatom diffusion. The adatom surface interaction is highly dependent on the type of the surface. Typically, Te interaction with both type (5.2 eV for A-type and 3.8 eV for B-type) is stronger than Cd interactions(2.4 eV for B-type and 0.39 eV for A-type). Cd interaction with the A-type surface is very weak. The distinct behavior of the A-type and B-type surfaces perceived in our study explain the need of maintaining the A-type surface during growth for smooth and stoichiometric growth

  9. Characterization of paraffin based breast tissue equivalent phantom using a CdTe detector pulse height analysis.

    Science.gov (United States)

    Cubukcu, Solen; Yücel, Haluk

    2016-12-01

    In this study, paraffin was selected as a base material and mixed with different amounts of CaSO 4 ·2H 2 O and H 3 BO 3 compounds in order to mimic breast tissue. Slab phantoms were produced with suitable mixture ratios of the additives in the melted paraffin. Subsequently, these were characterized in terms of first half-value layer (HVL) in the mammographic X-ray range using a pulse-height spectroscopic analysis with a CdTe detector. Irradiations were performed in the energy range of 23-35 kV p under broad beam conditions from Mo/Mo and Mo/Rh target/filter combinations. X-ray spectra were acquired with a CdTe detector without and with phantom material interposition in increments of 1 cm thickness and then evaluated to obtain the transmission data. The net integral areas of the spectra for the slabs were used to plot the transmission curves and these curves were fitted to the Archer model function. The results obtained for the slabs were compared with those of standard mammographic phantoms such as CIRS BR series phantoms and polymethylmethacrylate plates (PMMA). From the evaluated transmission curves, the mass attenuation coefficients and HVLs of some mixtures are close to those of the commercially available standard mammography phantoms. Results indicated that when a suitable proportion of H 3 BO 3 and CaSO 4 ·2H 2 O is added to the paraffin, the resulting material may be a good candidate for a breast tissue equivalent phantom.

  10. Determination of hyperin in seed of Cuscuta chinensis Lam. by enhanced chemiluminescence of CdTe quantum dots on calcein/K3Fe(CN)6 system.

    Science.gov (United States)

    Kang, Jing; Li, Xuwen; Geng, Jiayang; Han, Lu; Tang, Jieli; Jin, Yongri; Zhang, Yihua

    2012-10-15

    In this paper, 3-mercaptocarboxylic acid (MPA) modified CdTe quantum dots (QDs) were used as sensitizers, to enhance the chemiluminescence (CL) of the calcein/K(3)Fe(CN)(6) system. A new CL system of CdTe/calcein/K(3)Fe(CN)(6) was developed. The effects of reactant concentrations and the particle sizes of CdTe QDs on the CL emission were investigated in detail. The possible enhancement mechanism of the CL was also further investigated based on the photoluminescence (PL) and CL spectra. Polyphenols such as chlorogenic acid, quercetin, hyperin, catechin and kaempferol, were observed to inhibit the CL signal of the CdTe/calcein/K(3)Fe(CN)(6) system and determined by the proposed method. The proposed method was applied to the determination of hyperin in seed of Cuscuta chinensis Lam. and the results obtained were satisfactory. Copyright © 2012 Elsevier Ltd. All rights reserved.

  11. Electrochemical Deposition of CdTe Semiconductor Thin Films for Solar Cell Application Using Two-Electrode and Three-Electrode Configurations: A Comparative Study

    Directory of Open Access Journals (Sweden)

    O. K. Echendu

    2016-01-01

    Full Text Available Thin films of CdTe semiconductor were electrochemically deposited using two-electrode and three-electrode configurations in potentiostatic mode for comparison. Cadmium sulphate and tellurium dioxide were used as cadmium and tellurium sources, respectively. The layers obtained using both configurations exhibit similar structural, optical, and electrical properties with no specific dependence on any particular electrode configuration used. These results indicate that electrochemical deposition (electrodeposition of CdTe and semiconductors in general can equally be carried out using two-electrode system as well as the conventional three-electrode system without compromising the essential qualities of the materials produced. The results also highlight the advantages of the two-electrode configuration in process simplification, cost reduction, and removal of a possible impurity source in the growth system, especially as the reference electrode ages.

  12. Preparation and purification of L-cysteine capped CdTe quantum dots and its self-recovery of degenerate fluorescence

    International Nuclear Information System (INIS)

    Li Mengying; Zhou Huameng; Zhang Hongyan; Sun Pan; Yi Kuiyu; Wang Meng; Dong Zaizheng; Xu Shukun

    2010-01-01

    L-cysteine capped CdTe quantum dots (QDs) were prepared in aqueous solution by a simple and efficient method, showing many advantages such as short synthesis period, the broaden range of starting pH value and the wide fluorescence emission wavelength range. A novel purification process was designed to remove excess Cd 2+ which has potential cytotoxicity for bio-analysis. Three-dimensional fluorescence charts of pre- and post-purification showed that the purified QDs were of better luminescent performance. The prepared QDs were of cubic crystal structure with an average size of 2-6 nm, which were characterized by XRD and HRTEM. It is confirmed by IR spectra that the L-cysteine ligands were conjugated with CdTe cores via covalent bond. The degenerate fluorescence of QDs can be self-recovered in the presence of L-cysteine without other processing steps.

  13. DFT-derived reactive potentials for the simulation of activated processes: the case of CdTe and CdTe:S.

    Science.gov (United States)

    Hu, Xiao Liang; Ciaglia, Riccardo; Pietrucci, Fabio; Gallet, Grégoire A; Andreoni, Wanda

    2014-06-19

    We introduce a new ab initio derived reactive potential for the simulation of CdTe within density functional theory (DFT) and apply it to calculate both static and dynamical properties of a number of systems (bulk solid, defective structures, liquid, surfaces) at finite temperature. In particular, we also consider cases with low sulfur concentration (CdTe:S). The analysis of DFT and classical molecular dynamics (MD) simulations performed with the same protocol leads to stringent performance tests and to a detailed comparison of the two schemes. Metadynamics techniques are used to empower both Car-Parrinello and classical molecular dynamics for the simulation of activated processes. For the latter, we consider surface reconstruction and sulfur diffusion in the bulk. The same procedures are applied using previously proposed force fields for CdTe and CdTeS materials, thus allowing for a detailed comparison of the various schemes.

  14. Enhanced electrochemiluminescence quenching of CdS:Mn nanocrystals by CdTe QDs-doped silica nanoparticles for ultrasensitive detection of thrombin

    Science.gov (United States)

    Shan, Yun; Xu, Jing-Juan; Chen, Hong-Yuan

    2011-07-01

    This work reports an aptasensor for ultrasensitive detection of thrombin based on remarkably efficient energy-transfer induced electrochemiluminescence (ECL) quenching from CdS:Mn nanocrystals (NCs) film to CdTe QDs-doped silica nanoparticles (CdTe/SiO2 NPs). CdTe/SiO2 NPs were synthesized via the Stöber method and showed black bodies' strong absorption in a wide spectral range without excitonic emission, which made them excellent ECL quenchers. Within the effective distance of energy scavenging, the ECL quenching efficiency was dependent on the number of CdTe QDs doped into the silica NPs. Using ca. 200 CdTe QDs doped silica NPs on average of 40 nm in diameter as ECL quenching labels, attomolar detection of thrombin was successfully realized. The protein detection involves a competition binding event, based on thrombin replacing CdTe/SiO2 NPs labeled probing DNA which is hybridized with capturing aptamer immobilized on a CdS:Mn NCs film modified glassy carbon electrode surface by specific aptamer-protein affinity interactions. It results in the displacement of ECL quenching labels from CdS:Mn NCs film and concomitant ECL signal recovery. Owing to the high-content CdTe QDs in silica NP, the increment of ECL intensity (ΔIECL) and the concentration of thrombin showed a double logarithmic linear correlation in the range of 5.0 aM~5.0 fM with a detection limit of 1aM. And, the aptasensor hardly responded to antibody, bovine serum albumin (BSA), haemoglobin (Hb) and lysozyme, showing good detection selectivity for thrombin. This long-distance energy scavenging could have a promising application perspective in the detection of biological recognition events on a molecular level.This work reports an aptasensor for ultrasensitive detection of thrombin based on remarkably efficient energy-transfer induced electrochemiluminescence (ECL) quenching from CdS:Mn nanocrystals (NCs) film to CdTe QDs-doped silica nanoparticles (CdTe/SiO2 NPs). CdTe/SiO2 NPs were synthesized via

  15. Increased short circuit current in organic photovoltaic using high-surface area electrode based on ZnO nanowires decorated with CdTe quantum dots.

    Science.gov (United States)

    Aga, R S; Gunther, D; Ueda, A; Pan, Z; Collins, W E; Mu, R; Singer, K D

    2009-11-18

    A photosensitized high-surface area transparent electrode has been employed to increase the short circuit current of a photovoltaic device with a blend of poly(3-hexylthiophene) (P3HT) and (6,6)-phenyl C61 butyric acid methyl ester (PCBM) as the active layer. This is achieved by directly growing ZnO nanowires on indium tin oxide (ITO) film via a physical vapor method. The nanowire surface is then decorated with CdTe quantum dots by pulsed electron-beam deposition (PED). The nanowires alone provided a 20-fold increase in the short circuit current under visible light illumination. This was further increased by a factor of approximately 1.5 by the photosensitization effect of CdTe, which has an optical absorption of up to 820 nm.

  16. Development of a two-dimensional ASIC for hard X-ray spectroscopy and imaging with a CdTe pixel detector

    International Nuclear Information System (INIS)

    Hiruta, Tatsuro; Tamura, K.; Ikeda, H.; Nakazawa, K.; Takasima, T.; Takahashi, T.

    2006-01-01

    We are developing a two-dimensional analog ASIC for the readout of pixel sensors based on silicon (Si) or cadmium telluride (CdTe) for spectroscopic imaging observations in the X-ray and gamma-ray regions. The aim for the ASIC is to obtain a low-noise performance better than 100 electrons (rms) with self-triggering capabilities. As the first step of prototyping, we have fabricated several ASICs. We obtained an energy resolution of 5.4 keV (FWHM) for 81 keV gamma-rays from 133 Ba with a one-dimensional ASIC connected to a CdTe diode and also verified a readout architecture via a two-dimensional ASIC with 144 pixel channels. Based on the results obtained and experience gained through prototype ASICs, we are developing a 4096-channel two-dimensional analog ASIC

  17. Study and development of new CdTe and CdZnTe detection structures for X and {gamma} imagery; Etude et realisation de nouvelles structures de detection a base de CdTe et CdZnTe pour l`imagerie X et {gamma}

    Energy Technology Data Exchange (ETDEWEB)

    Rosaz, M

    1997-10-24

    The aim of this study is to show the interest of applying cadmium telluride (CdTe) for X- and {gamma}- ray imaging applications, with specific technological (via contact nature) and geometric (via Frisch grids) structures suited for each application. This work is divided into three different but complementary parts: the first part describes a simulation model which allows a better understanding of CdTe based {gamma}- ray detectors. The new feature of this model compared to previous ones, is that it is able to take into account the electric field`s non uniform spatial distribution inside the detector s. The results enable us to de-convolute the influence of material and contact parameters on the spectrometric performances (energy resolution and peak/valley ratio) of CdTe based detectors; the second part presents different technological structures deposited upon CdTe, (grown by two different methods, i.e Bridgman and High Pressure Bridgman). These structures were characterised in X- and {gamma}- ray detection; theoretical models are developed which allow a certain insight into the detection properties of each couple (material + contact); the third part deals with new contact geometries which allow a screening effect of the bulk (analogous to the Frisch grid effect in gaseous detectors) resulting in improved energy resolution and peak/valley ratios; encouraging first results on prototypes are presented and discussed. This work has allowed a better understanding of physical behaviour of CdTe based detectors, coupled with advances in technological issues to upgrade the overall performances of these detectors for application in X- and {gamma}- ray imaging. (author) 93 refs.

  18. Development of MoO{sub x} thin films as back contact buffer for CdTe solar cells in substrate configuration

    Energy Technology Data Exchange (ETDEWEB)

    Gretener, C., E-mail: christina.gretener@empa.ch [Laboratory for Thin Films and Photovoltaics, Empa — Swiss Federal Laboratories for Materials Science and Technology, Überlandstr. 129, 8600 Dübendorf (Switzerland); Perrenoud, J.; Kranz, L.; Baechler, C. [Laboratory for Thin Films and Photovoltaics, Empa — Swiss Federal Laboratories for Materials Science and Technology, Überlandstr. 129, 8600 Dübendorf (Switzerland); Yoon, S. [Laboratory for Solid State Chemistry and Catalysis, Empa — Swiss Federal Laboratories for Materials Science and Technology, Überlandstr. 129, 8600 Dübendorf (Switzerland); Romanyuk, Y.E.; Buecheler, S.; Tiwari, A.N. [Laboratory for Thin Films and Photovoltaics, Empa — Swiss Federal Laboratories for Materials Science and Technology, Überlandstr. 129, 8600 Dübendorf (Switzerland)

    2013-05-01

    Molybdenum oxide compounds exhibit unique electrical and optical properties depending on oxygen vacancy concentration and composition and therefore, have recently attracted a lot of attention as a hole transport layer in various devices. In this work CdTe solar cells in substrate configuration were grown with evaporated MoO{sub x} back contact buffer layers and efficiencies of up to 10% could be achieved without using Cu in the back contact processing. The buffer layer – at the CdTe/back contact interface – in the finished cell was found to consist of MoO{sub 2} phase instead of the expected MoO{sub 3} phase as observed in as-deposited or annealed MoO{sub x} layers without CdTe deposition. In order to obtain MoO{sub x} buffer layers with desired stoichiometry, MoO{sub x} thin films were deposited by radio-frequency sputtering under different growth conditions. The chemical phase, composition, microstructure and optical properties of such layers were studied for their possible use in CdTe solar cells. - Highlights: ► MoO{sub x} is used as a back contact buffer in CdTe solar cells in substrate configuration. ► Efficiency of 10.0% was achieved without the addition of Cu. ► The back contact buffer in the finished device consists only of MoO{sub 2}. ► Phases and microstructure of MoO{sub x} can be controlled by sputtering conditions.

  19. Enhanced electrochemiluminescence quenching of CdS:Mn nanocrystals by CdTe QDs-doped silica nanoparticles for ultrasensitive detection of thrombin.

    Science.gov (United States)

    Shan, Yun; Xu, Jing-Juan; Chen, Hong-Yuan

    2011-07-01

    This work reports an aptasensor for ultrasensitive detection of thrombin based on remarkably efficient energy-transfer induced electrochemiluminescence (ECL) quenching from CdS:Mn nanocrystals (NCs) film to CdTe QDs-doped silica nanoparticles (CdTe/SiO(2) NPs). CdTe/SiO(2) NPs were synthesized via the Stöber method and showed black bodies' strong absorption in a wide spectral range without excitonic emission, which made them excellent ECL quenchers. Within the effective distance of energy scavenging, the ECL quenching efficiency was dependent on the number of CdTe QDs doped into the silica NPs. Using ca. 200 CdTe QDs doped silica NPs on average of 40 nm in diameter as ECL quenching labels, attomolar detection of thrombin was successfully realized. The protein detection involves a competition binding event, based on thrombin replacing CdTe/SiO(2) NPs labeled probing DNA which is hybridized with capturing aptamer immobilized on a CdS:Mn NCs film modified glassy carbon electrode surface by specific aptamer-protein affinity interactions. It results in the displacement of ECL quenching labels from CdS:Mn NCs film and concomitant ECL signal recovery. Owing to the high-content CdTe QDs in silica NP, the increment of ECL intensity (ΔI(ECL)) and the concentration of thrombin showed a double logarithmic linear correlation in the range of 5.0 aM∼5.0 fM with a detection limit of 1aM. And, the aptasensor hardly responded to antibody, bovine serum albumin (BSA), haemoglobin (Hb) and lysozyme, showing good detection selectivity for thrombin. This long-distance energy scavenging could have a promising application perspective in the detection of biological recognition events on a molecular level.

  20. Various types of semiconductor photocatalysts modified by CdTe QDs and Pt NPs for toluene photooxidation in the gas phase under visible light

    Energy Technology Data Exchange (ETDEWEB)

    Marchelek, M. [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland); Grabowska, E., E-mail: ewelina.grabowska@ug.edu.pl [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland); Klimczuk, T. [Department of Solid State Physics, Faculty of Applied Physics and Mathematics, Gdansk University of Technology, G. Narutowicza 11/12, 80-233 Gdansk (Poland); Lisowski, W. [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44-52, 01-224 Warsaw (Poland); Zaleska-Medynska, A. [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland)

    2017-01-30

    Highlights: • Novel semiconductors decorated by CdTe QDs and/or Pt NPs were synthesized. • Photodeposition and radiolysis is an effective method to obtaining Pt NPs. • CdTe decorated samples were prepared by absorption of QDs on matrix surface. • KTaO{sub 3}/CdTe-Pt{sub (R)} showed highest photocatalytic performance. • The enhanced performance was associated with electron trap mechanism. - Abstract: A novel synthesis process was used to prepare TiO{sub 2} microspheres, TiO{sub 2} P-25, SrTiO{sub 3} and KTaO{sub 3} decorated by CdTe QDs and/or Pt NPs. The effect of semiconductor matrix, presence of CdTe QDs and/or Pt NPs on the semiconductor surface as well as deposition technique of Pt NPs (photodeposition or radiolysis) on the photocatalytic activity were investigated. The as-prepared samples were characterized by X-ray powder diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) with energy-dispersive X-ray (EDX) spectroscopy, scanning electron microscopy (SEM), photoluminescence spectrometry (PL), Fourier transform infrared (FT-IR) and Raman spectra, diffuse reflectance spectroscopy (DRS) and BET surface area analysis. The photocatalytic decomposition of toluene in gas phase, activated by light-emitting diodes (LEDs), with the CdTe/Pt nanoparticles-modified TiO{sub 2} microspheres, P25, SrTiO{sub 3} and KTaO{sub 3} semiconductors was investigated under UV–vis and visible irradiation.The results showed that the photoactivity depends on semiconductor matrix. The highest photoactivity under Vis light was observed for KTaO{sub 3}/CdTe-Pt{sub (R)} sample (56% of toluene was decompose after 30 min of irradiation). The efficiency of the most active sample was 3 times higher than result for P25 and two times higher than for unmodified KTaO{sub 3}.

  1. Characterization of L-cysteine capped CdTe quantum dots and application to test Cu(II) deficiency in biological samples from critically ill patients

    Energy Technology Data Exchange (ETDEWEB)

    Sáez, Laura; Molina, Jorge; Florea, Daniela I.; Planells, Elena M. [Institute of Nutrition and Food Technology and Department of Physiology, Faculty of Pharmacy, Campus Cartuja, University of Granada, E-18071 Granada (Spain); Cabeza, M. Carmen [Department of Physical Chemistry, Faculty of Pharmacy, University of Granada, E-18071 Granada (Spain); Quintero, Bartolomé, E-mail: bqosso@ugr.es [Department of Physical Chemistry, Faculty of Pharmacy, University of Granada, E-18071 Granada (Spain)

    2013-06-27

    Graphical abstract: -- Highlights: •We examinate stability of L-cysteine capped CdTe QD. •Factors influence QD fluorescence response are controlled. •Application in copper deficiency analysis is made. •We report comparison with other techniques. -- Abstract: The catalytic activity of copper ion gives, from the physiological point of view, a central role in many biological processes. Variations in the composition and location of cellular copper have been addressed given their physiological and pathological consequences. In this paper L-cysteine capped CdTe quantum dots is used for the fluorimetric determination of Cu(II) in biological samples from healthy individuals and patients admitted to the Intensive Care Units (ICU). An acceptable homogeneity in the CdTe QDs size has been obtained with an average value of 3 nm. No significant alterations in the spectral properties were observed for 2 months when stored in vacutainers at 6 °C and a concentration of approximately 2 μM. Data from oxidative stress markers such superoxide dismutase, total antioxidant capacity and DNA damage can be correlated with a Cu(II) deficiency for the ICU patients as measured by flame-atomic absorption spectroscopy (FAAS) and inductively coupled plasma source mass spectrometry (ICP-MS). Aqueous solutions 0.3 μM of L-cysteine capped CdTe QDs in MOPS buffer (6 mM, pH 7.4) used at 21 °C in the range 15–60 min after preparation of the sample for the measurements of fluorescence gives contents in Cu(II) for erythrocytes in good agreement with those obtained in FAAS and ICP-MS but the comparative ease of use makes the fluorimetric technique more suitable than the other two techniques for routine analysis.

  2. Enhancement of open-circuit voltage and the fill factor in CdTe nanocrystal solar cells by using interface materials

    International Nuclear Information System (INIS)

    Zhu, Jiaoyan; Yang, Yuehua; Gao, Yuping; Qin, Donghuan; Wu, Hongbin; Huang, Wenbo; Hou, Lintao

    2014-01-01

    Interface states influence the operation of nanocrystal (NC) solar cell carrier transport, recombination and energetic mechanisms. In a typical CdTe NC solar cell with a normal structure of a ITO/p-CdTe NCs/n-acceptor (or without)/Al configuration, the contact between the ITO and CdTe is a non-ohm contact due to a different work function (for an ITO, the value is ∼4.7 eV, while for CdTe NCs, the value is ∼5.3 eV), which results in an energetic barrier at the ITO/CdTe interface and decreases the performance of the NC solar cells. This work investigates how interface materials (including Au, MoO x and C 60 ) affect the performance of NC solar cells. It is found that devices with interface materials have shown higher V oc than those without interface materials. For the case in which we used Au as an interface, we obtained a high open-circuit voltage of 0.65 V, coupled with a high fill factor (62%); this resulted in a higher energy conversion efficiency (ECE) of 5.3%, which showed a 30% increase in the ECE compared with those without the interlayer. The capacitance measurements indicate that the increased V oc in the case in which Au was used as the interface is likely due to good ohm contact between the Au’s and the CdTe NCs’ thin film, which decreases the energetic barrier at the ITO/CdTe interface. (paper)

  3. Impairments of spatial learning and memory following intrahippocampal injection in rats of 3-mercaptopropionic acid-modified CdTe quantum dots and molecular mechanisms.

    Science.gov (United States)

    Wu, Tianshu; He, Keyu; Ang, Shengjun; Ying, Jiali; Zhang, Shihan; Zhang, Ting; Xue, Yuying; Tang, Meng

    2016-01-01

    With the rapid development of nanotechnology, quantum dots (QDs) as advanced nanotechnology products have been widely used in neuroscience, including basic neurological studies and diagnosis or therapy for neurological disorders, due to their superior optical properties. In recent years, there has been intense concern regarding the toxicity of QDs, with a growing number of studies. However, knowledge of neurotoxic consequences of QDs applied in living organisms is lagging behind their development, even if several studies have attempted to evaluate the toxicity of QDs on neural cells. The aim of this study was to evaluate the adverse effects of intrahippocampal injection in rats of 3-mercaptopropionic acid (MPA)-modified CdTe QDs and underlying mechanisms. First of all, we observed impairments in learning efficiency and spatial memory in the MPA-modified CdTe QD-treated rats by using open-field and Y-maze tests, which could be attributed to pathological changes and disruption of ultrastructure of neurons and synapses in the hippocampus. In order to find the mechanisms causing these effects, transcriptome sequencing (RNA-seq), an advanced technology, was used to gain the potentially molecular targets of MPA-modified CdTe QDs. According to ample data from RNA-seq, we chose the signaling pathways of PI3K-Akt and MPAK-ERK to do a thorough investigation, because they play important roles in synaptic plasticity, long-term potentiation, and spatial memory. The data demonstrated that phosphorylated Akt (p-Akt), p-ERK1/2, and c-FOS signal transductions in the hippocampus of rats were involved in the mechanism underlying spatial learning and memory impairments caused by 3.5 nm MPA-modified CdTe QDs.

  4. The influence of capping thioalkyl acid on the growth and photoluminescence efficiency of CdTe and CdSe quantum dots

    International Nuclear Information System (INIS)

    Aldeek, Fadi; Lambert, Jacques; Balan, Lavinia; Schneider, Raphael

    2008-01-01

    The influence of thioalkyl acid ligand was evaluated during aqueous synthesis at 100 deg. C and under hydrothermal conditions (150 deg. C) of CdTe and CdSe quantum dots (QDs). Experiments performed with 3-mercaptopropionic acid (MPA), 6-mercaptohexanoic acid (MHA) and 11-mercaptoundecanoic acid (MUA) demonstrated that the use of MHA and MUA allowed for the preparation of very small nanoparticles (0.6-2.5 nm) in carrying out the reaction under atmospheric pressure or in an autoclave and that the photophysical properties of QDs were dependent on the ligand and on the synthesis conditions. The influence of various experimental conditions, including the Te-to-Cd ratio, temperature, and precursor concentration, on the growth rate of CdTe or CdSe QDs has been systematically investigated. The fluorescence intensities of CdTe QDs capped with MPA, MHA, or MUA versus pH were also found to be related to the surface coverage of the nanoparticles.

  5. Chiral recognition of phenylglycinol enantiomers based on N-acetyl-L-cysteine capped CdTe quantum dots in the presence of Ag+

    Science.gov (United States)

    Guo, Yuan; Zeng, Xiaoqing; Yuan, Haiyan; Huang, Yunmei; Zhao, Yanmei; Wu, Huan; Yang, Jidong

    2017-08-01

    In this study, a novel method for chiral recognition of phenylglycinol (PG) enantiomers was proposed. Firstly, water-soluble N-acetyl-L-cysteine (NALC)-capped CdTe quantum dots (QDs) were synthesized and experiment showed that the fluorescence intensity of the reaction system slightly enhancement when added PG enantiomers to NALC-capped CdTe quantum dots (QDs), but the R-PG and S-PG could not be distinguished. Secondly, when there was Ag+ presence in the reaction system, the experiment result was extremely interesting, the PG enantiomers cloud make NALC-capped CdTe QDs produce different fluorescence signal, in which the fluorescence of S-PG + Ag+ + NALC-CdTe system was significantly enhanced, and the fluorescence of R-PG + Ag+ + NALC-CdTe system was markedly decreased. Thirdly, all the enhanced and decreased of the fluorescence intensity were directly proportional to the concentration of R-PG and S-PG in the linearly range 10- 5-10- 7 mol·L- 1, respectively. So, the new method for simultaneous determination of the PG enantiomers was built too. The experiment result of the method was satisfactory with the detection limit of PG can reached 10- 7 mol·L- 1 and the related coefficient of S-PG and R-PG are 0.995 and 0.980, respectively. The method was highly sensitive, selective and had wider detection range compared with other methods.

  6. Understanding and managing health and environmental risks of CIS, CGS, and CdTe photovoltaic module production and use: A workshop

    Energy Technology Data Exchange (ETDEWEB)

    Moskowitz, P.D.; Zweibel, K.; DePhillips, M.P. [eds.

    1994-04-28

    Environmental, health and safety (EH&S) risks presented by CIS, CGS and CdTe photovoltaic module production, use and decommissioning have been reviewed and discussed by several authors. Several EH&S concerns exit. The estimated EH&S risks are based on extrapolations of toxicity, environmental mobility, and bioavailability data for other related inorganic compounds. Sparse data, however, are available for CIS, CGS or CdTe. In response to the increased interest in these materials, Brookhaven National Laboratory (BNL) has been engaged in a cooperative research program with the National Renewable Energy Laboratory (NREL), the Fraunhofer Institute for Solid State Technology (IFT), the Institute of Ecotoxicity of the GSF Forschungszentrum fair Umwelt und Gesundheit, and the National Institute of Environmental Health Sciences (NIEHS) to develop fundamental toxicological and environmental data for these three compounds. This workshop report describes the results of these studies and describes their potential implications with respect to the EH&S risks presented by CIS, CGS, and CdTe module production, use and decommissioning.

  7. Imaging performance comparison between a LaBr3: Ce scintillator based and a CdTe semiconductor based photon counting compact gamma camera.

    Science.gov (United States)

    Russo, P; Mettivier, G; Pani, R; Pellegrini, R; Cinti, M N; Bennati, P

    2009-04-01

    The authors report on the performance of two small field of view, compact gamma cameras working in single photon counting in planar imaging tests at 122 and 140 keV. The first camera is based on a LaBr3: Ce scintillator continuous crystal (49 x 49 x 5 mm3) assembled with a flat panel multianode photomultiplier tube with parallel readout. The second one belongs to the class of semiconductor hybrid pixel detectors, specifically, a CdTe pixel detector (14 x 14 x 1 mm3) with 256 x 256 square pixels and a pitch of 55 microm, read out by a CMOS single photon counting integrated circuit of the Medipix2 series. The scintillation camera was operated with selectable energy window while the CdTe camera was operated with a single low-energy detection threshold of about 20 keV, i.e., without energy discrimination. The detectors were coupled to pinhole or parallel-hole high-resolution collimators. The evaluation of their overall performance in basic imaging tasks is presented through measurements of their detection efficiency, intrinsic spatial resolution, noise, image SNR, and contrast recovery. The scintillation and CdTe cameras showed, respectively, detection efficiencies at 122 keV of 83% and 45%, intrinsic spatial resolutions of 0.9 mm and 75 microm, and total background noises of 40.5 and 1.6 cps. Imaging tests with high-resolution parallel-hole and pinhole collimators are also reported.

  8. IDeF-X ECLAIRs: A CMOS ASIC for the Readout of CdTe and CdZnTe Detectors for High Resolution Spectroscopy

    International Nuclear Information System (INIS)

    Gevin, O.; Baron, P.; Coppolani, X.; Delagnes, E.; Lugiez, F.; Daly, F.; Limousin, O.; Meuris, A.; Pinsard, F.; Renaud, D.

    2009-01-01

    The very last member of the IDeF-X ASIC family is presented: IDeF-X ECLAIRs is a 32-channel front end ASIC designed for the readout of Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) Detectors. Thanks to its noise performance (Equivalent Noise Charge floor of 33 e - rms) and to its radiation hardened design (Single Event Latch-up Linear Energy Transfer threshold of 56 MeV.cm 2 .mg -1 ), the chip is well suited for soft X-rays energy discrimination and high energy resolution, 'space proof', hard X-ray spectroscopy. We measured an energy low threshold of less than 4 keV with a 10 pF input capacitor and a minimal reachable sensitivity of the Equivalent Noise Charge (ENC) to input capacitance of less than 7e - /pF obtained with a 6 μs peak time. IDeF-X ECLAIRs will be used for the readout of 6400 CdTe Schottky mono-pixel detectors of the 2D coded mask imaging telescope ECLAIRs aboard the SVOM satellite. IDeF-X ECLAIRs (or IDeF-X V2) has also been designed for the readout of a pixelated CdTe detector in the miniature spectro-imager prototype Caliste 256 that is currently foreseen for the high energy detector module of the Simbol-X mission. (authors)

  9. IDeF-X ECLAIRs: A CMOS ASIC for the Readout of CdTe and CdZnTe Detectors for High Resolution Spectroscopy

    Science.gov (United States)

    Gevin, Olivier; Baron, Pascal; Coppolani, Xavier; Daly, FranÇois; Delagnes, Eric; Limousin, Olivier; Lugiez, Francis; Meuris, Aline; Pinsard, FrÉdÉric; Renaud, Diana

    2009-08-01

    The very last member of the IDeF-X ASIC family is presented: IDeF-X ECLAIRs is a 32-channel front end ASIC designed for the readout of Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) Detectors. Thanks to its noise performance (Equivalent Noise Charge floor of 33 e- rms) and to its radiation hardened design (Single Event Latchup Linear Energy Transfer threshold of 56 MeV.cm2.mg-1), the chip is well suited for soft X-rays energy discrimination and high energy resolution, ldquospace proof,rdquo hard X-ray spectroscopy. We measured an energy low threshold of less than 4 keV with a 10 pF input capacitor and a minimal reachable sensitivity of the Equivalent Noise Charge (ENC) to input capacitance of less than 7 e-/pF obtained with a 6 mus peak time. IDeF-X ECLAIRs will be used for the readout of 6400 CdTe Schottky monopixel detectors of the 2D coded mask imaging telescope ECLAIRs aboard the SVOM satellite. IDeF-X ECLAIRs (or IDeF-X V2) has also been designed for the readout of a pixelated CdTe detector in the miniature spectro-imager prototype Caliste 256 that is currently foreseen for the high energy detector module of the Simbol-X mission.

  10. A novel microfluidic origami photoelectrochemical sensor based on CdTe quantum dots modified molecularly imprinted polymer and its highly selective detection of S-fenvalerate

    International Nuclear Information System (INIS)

    Wang, Yanhu; Zang, Dejin; Ge, Shenguang; Ge, Lei; Yu, Jinghua; Yan, Mei

    2013-01-01

    Driven by the urgent demand of high-selectively point-of-care testing device for pesticide, molecular imprinting-photoelectrochemistry (MI-PEC) was introduced into microfluidic paper-based analytical strategy to design a novel paper-based photoelectrochemical (paper-based PEC) protocol. The MI-PEC strategy was constructed based on CdTe quantum dots dotted molecular imprinted polymers (CdTe QDs@MIPs), and triggered by a common ultraviolet lamp (∼365 nm, 50$). The paper-based PEC sensor was fabricated by immobilizing CdTe QDs@MIPs on paper-based screen-printed working electrodes (WEs) via gold nanoparticles (Au NPs), which was electrodeposited on the surface of WE to improve the electron transfer efficiency for high sensitivity. Using S-fenvalerate as model analyte, the produced photocurrent from the proposed paper-based MI-PEC sensor upon ultraviolet radiation decreased with the increasing concentrations of S-fenvalerate solution, and the quenched paper-based MI-PEC showed a low detection limit of 3.2 × 10 −9 mol L −1 . This study has made a successful attempt in the development of highly selective and sensitive photoelectrochemical sensor for S-fenvalerate monitoring

  11. Characterization of core/shell structures based on CdTe and GaAs nanocrystalline layers deposited on SnO2 microwires

    Science.gov (United States)

    Ghimpu, L.; Ursaki, V. V.; Pantazi, A.; Mesterca, R.; Brâncoveanu, O.; Shree, Sindu; Adelung, R.; Tiginyanu, I. M.; Enachescu, M.

    2018-04-01

    We report the fabrication and characterization of SnO2/CdTe and SnO2/GaAs core/shell microstructures. CdTe or GaAs shell layers were deposited by radio-frequency (RF) magnetron sputtering on core SnO2 microwires synthesized by a flame-based thermal oxidation method. The produced structures were characterized by scanning electron microscopy (SEM), high-resolution scanning transmission electron microscope (HR-STEM), X-ray diffraction (XRD), Raman scattering and FTIR spectroscopy. It was found that the SnO2 core is of the rutile type, while the shells are composed of CdTe or GaAs nanocrystallites of zincblende structure with the dimensions of crystallites in the range of 10-20 nm. The Raman scattering investigations demonstrated that the quality of the porous nanostructured shell is improved by annealing at temperatures of 420-450 °C. The prospects of implementing these microstructures in intrinsic type fiber optic sensors are discussed.

  12. Rational design of tetraphenylethylene-based luminescent down-shifting molecules: photophysical studies and photovoltaic applications in a CdTe solar cell from small to large units.

    Science.gov (United States)

    Li, Yilin; Li, Zhipeng; Ablekim, Tursunjan; Ren, Tianhui; Dong, Wen-Ji

    2014-12-21

    A rational design strategy of novel fluorophores for luminescent down-shifting (LDS) application was proposed and tested in this paper. Three new fluorophores (1a-c) with specific intramolecular charge transfer (ICT) and aggregation-induced emission (AIE) characteristics were synthesized as LDS molecules for increasing the output short circuit current density (Jsc) of a CdTe solar cell. Photophysical studies of their solution and solid states, and photovoltaic measurements of their PMMA solid films applied on a CdTe solar cell suggested that the specific spectroscopic properties and Jsc enhancement effects of these molecules were highly related to their chemical structures. The Jsc enhancement effects of these fluorophores were measured on both a CdTe small cell and a large panel. An increase in the output Jsc by as high as 5.69% for a small cell and 8.88% for a large panel was observed. Compared to a traditional LDS molecule, Y083, these fluorophores exhibited more superior capabilities of LDS.

  13. Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

    International Nuclear Information System (INIS)

    Fedorenko, Y. G.; Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K.

    2015-01-01

    By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe

  14. Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Fedorenko, Y. G., E-mail: y.fedorenko@liverpool.ac.uk; Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K. [Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, Chadwick Building, University of Liverpool, Liverpool L69 7ZF (United Kingdom)

    2015-10-28

    By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe.

  15. Optical characterization of epitaxial single crystal CdTe thin films on Al{sub 2}O{sub 3} (0001) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jovanovic, S.M.; Devenyi, G.A., E-mail: devenyga@mcmaster.ca; Jarvis, V.M.; Meinander, K.; Haapamaki, C.M.; Kuyanov, P.; Gerber, M.; LaPierre, R.R.; Preston, J.S.

    2014-11-03

    The optoelectronic properties of single crystal CdTe thin films were investigated by photoluminescence spectroscopy, photoreflectance spectroscopy and variable angle spectroscopic ellipsometry. The room temperature bandgap was measured to be 1.51 eV and was consistent between spectroscopic measurements and previously reported values. Breadth of bandgap emission was consistent with high quality material. Low temperature photoluminescence spectra indicated a dominant emission consistent with bound excitons. Emissions corresponding to self-compensation defects, doping and contaminants were not found. Variable angle spectroscopic ellipsometry measurements over the near-UV to infrared range demonstrated sharp resonance peaks. All spectroscopic measurements indicate high quality thin film material of comparable or better quality than bulk CdTe. - Highlights: • High quality epitaxial CdTe thin films were grown. • Two dimensional X-ray diffraction characterization confirmed single crystal material. • Photoluminescence indicated low defect density when compared to bulk single crystals. • Optical characterization indicated the presence of room temperature excitons.

  16. CdTe quantum dots functionalized with 4-amino-2,2,6,6-tetramethylpiperidine-N-oxide as luminescent nanoprobe for the sensitive recognition of bromide ion

    International Nuclear Information System (INIS)

    Adegoke, Oluwasesan; Hosten, Eric; McCleland, Cedric; Nyokong, Tebello

    2012-01-01

    Graphical abstract: A bromide ion-selective modified nanoprobe sensor based on 4-amino-2,2,6,6-tetramethylpiperidine-N-oxide (4AT)-functionalized CdTe quantum dots (QDs-4AT) showed a high selectivity and sensitivity for the determination of bromide ion using fluorescence recovery. Highlights: ► Water soluble CdTe quantum dots interact with tetramethylpiperidine-N-oxide. ► Quantum dots fluorescence is quenched by the radical. ► In the presence of bromide ions the fluorescence is restored. ► The sensor is more selective to bromine ions than other common ions. - Abstract: A novel bromide ion-selective modified nanoprobe sensor based on 4-amino-2,2,6,6-tetramethylpiperidine-N-oxide (4AT)-functionalized CdTe quantum dots (QDs-4AT) has been developed. Fluorescence quenching of the QDs by 4AT was observed. The functionalized QDs-4AT nanoprobe allowed a highly sensitive determination of bromide ion via analyte-induced change in the photoluminescence (fluorescence recovery) of the modified QDs. A detection limit of 0.6 nM of bromide ion was obtained, while the interfering effect of other inorganic cations and anions was investigated to examine the selectivity of the nanoprobe. The linear range was between 0.01 and 0.13 μM. Combined fluorescence lifetime and electron paramagnetic resonance measurements confirmed electron transfer processes between bromide ion and QDs-4AT.

  17. Landfill waste and recycling: Use of a screening-level risk assessment tool for end-of-life cadmium telluride (CdTe) thin-film photovoltaic (PV) panels

    International Nuclear Information System (INIS)

    Cyrs, William D.; Avens, Heather J.; Capshaw, Zachary A.; Kingsbury, Robert A.; Sahmel, Jennifer; Tvermoes, Brooke E.

    2014-01-01

    Grid-connected solar photovoltaic (PV) power is currently one of the fastest growing power-generation technologies in the world. While PV technologies provide the environmental benefit of zero emissions during use, the use of heavy metals in thin-film PV cells raises important health and environmental concerns regarding the end-of-life disposal of PV panels. To date, there is no published quantitative assessment of the potential human health risk due to cadmium leaching from cadmium telluride (CdTe) PV panels disposed in a landfill. Thus, we used a screening-level risk assessment tool to estimate possible human health risk associated with disposal of CdTe panels into landfills. In addition, we conducted a literature review of potential cadmium release from the recycling process in order to contrast the potential health risks from PV panel disposal in landfills to those from PV panel recycling. Based on the results of our literature review, a meaningful risk comparison cannot be performed at this time. Based on the human health risk estimates generated for PV panel disposal, our assessment indicated that landfill disposal of CdTe panels does not pose a human health hazard at current production volumes, although our results pointed to the importance of CdTe PV panel end-of-life management. - Highlights: • Analysis of possible human health risk posed by disposal of CdTe panels into landfills. • Qualitative comparison of risks associated with landfill disposal and recycling of CdTe panels. • Landfill disposal of CdTe panels does not pose a human health hazard at current production volumes. • There could be potential risks associated with recycling if not properly managed. • Factors other than concerns over toxic substances will likely drive the decisions of how to manage end-of-life PV panels

  18. Photon-counting hexagonal pixel array CdTe detector: Spatial resolution characteristics for image-guided interventional applications.

    Science.gov (United States)

    Vedantham, Srinivasan; Shrestha, Suman; Karellas, Andrew; Shi, Linxi; Gounis, Matthew J; Bellazzini, Ronaldo; Spandre, Gloria; Brez, Alessandro; Minuti, Massimo

    2016-05-01

    High-resolution, photon-counting, energy-resolved detector with fast-framing capability can facilitate simultaneous acquisition of precontrast and postcontrast images for subtraction angiography without pixel registration artifacts and can facilitate high-resolution real-time imaging during image-guided interventions. Hence, this study was conducted to determine the spatial resolution characteristics of a hexagonal pixel array photon-counting cadmium telluride (CdTe) detector. A 650 μm thick CdTe Schottky photon-counting detector capable of concurrently acquiring up to two energy-windowed images was operated in a single energy-window mode to include photons of 10 keV or higher. The detector had hexagonal pixels with apothem of 30 μm resulting in pixel pitch of 60 and 51.96 μm along the two orthogonal directions. The detector was characterized at IEC-RQA5 spectral conditions. Linear response of the detector was determined over the air kerma rate relevant to image-guided interventional procedures ranging from 1.3 nGy/frame to 91.4 μGy/frame. Presampled modulation transfer was determined using a tungsten edge test device. The edge-spread function and the finely sampled line spread function accounted for hexagonal sampling, from which the presampled modulation transfer function (MTF) was determined. Since detectors with hexagonal pixels require resampling to square pixels for distortion-free display, the optimal square pixel size was determined by minimizing the root-mean-squared-error of the aperture functions for the square and hexagonal pixels up to the Nyquist limit. At Nyquist frequencies of 8.33 and 9.62 cycles/mm along the apothem and orthogonal to the apothem directions, the modulation factors were 0.397 and 0.228, respectively. For the corresponding axis, the limiting resolution defined as 10% MTF occurred at 13.3 and 12 cycles/mm, respectively. Evaluation of the aperture functions yielded an optimal square pixel size of 54 μm. After resampling to 54

  19. Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

    Energy Technology Data Exchange (ETDEWEB)

    Barber, W.C., E-mail: william.barber@dxray.com [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Wessel, J.C. [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Nygard, E. [Interon AS, Asker (Norway); Iwanczyk, J.S. [DxRay, Inc., Northridge, CA (United States)

    2015-06-01

    We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

  20. Photon-counting hexagonal pixel array CdTe detector: Spatial resolution characteristics for image-guided interventional applications

    Energy Technology Data Exchange (ETDEWEB)

    Vedantham, Srinivasan; Shrestha, Suman; Karellas, Andrew, E-mail: andrew.karellas@umassmed.edu; Shi, Linxi; Gounis, Matthew J. [Department of Radiology, University of Massachusetts Medical School, Worcester, Massachusetts 01655 (United States); Bellazzini, Ronaldo; Spandre, Gloria; Brez, Alessandro; Minuti, Massimo [Istituto Nazionale di Fisica Nucleare (INFN), Pisa 56127, Italy and Pixirad Imaging Counters s.r.l., L. Pontecorvo 3, Pisa 56127 (Italy)

    2016-05-15

    Purpose: High-resolution, photon-counting, energy-resolved detector with fast-framing capability can facilitate simultaneous acquisition of precontrast and postcontrast images for subtraction angiography without pixel registration artifacts and can facilitate high-resolution real-time imaging during image-guided interventions. Hence, this study was conducted to determine the spatial resolution characteristics of a hexagonal pixel array photon-counting cadmium telluride (CdTe) detector. Methods: A 650 μm thick CdTe Schottky photon-counting detector capable of concurrently acquiring up to two energy-windowed images was operated in a single energy-window mode to include photons of 10 keV or higher. The detector had hexagonal pixels with apothem of 30 μm resulting in pixel pitch of 60 and 51.96 μm along the two orthogonal directions. The detector was characterized at IEC-RQA5 spectral conditions. Linear response of the detector was determined over the air kerma rate relevant to image-guided interventional procedures ranging from 1.3 nGy/frame to 91.4 μGy/frame. Presampled modulation transfer was determined using a tungsten edge test device. The edge-spread function and the finely sampled line spread function accounted for hexagonal sampling, from which the presampled modulation transfer function (MTF) was determined. Since detectors with hexagonal pixels require resampling to square pixels for distortion-free display, the optimal square pixel size was determined by minimizing the root-mean-squared-error of the aperture functions for the square and hexagonal pixels up to the Nyquist limit. Results: At Nyquist frequencies of 8.33 and 9.62 cycles/mm along the apothem and orthogonal to the apothem directions, the modulation factors were 0.397 and 0.228, respectively. For the corresponding axis, the limiting resolution defined as 10% MTF occurred at 13.3 and 12 cycles/mm, respectively. Evaluation of the aperture functions yielded an optimal square pixel size of 54

  1. Research into the electrical property variation of undoped CdTe and ZnTe crystals grown under Te-rich conditions

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Yadong, E-mail: xyd220@nwpu.edu.cn; Liu, Hang; He, Yihui; Yang, Rui; Luo, Lin; Jie, Wanqi

    2014-11-05

    Highlights: • Conductivity type and resistivity of undoped Te-rich ZnTe and CdTe are different. • Te{sub i} and V{sub Zn} as the dominant defects account for the p-type low resistivity ZnTe. • Te{sub Cd} as the principle defect leading to the light n-type high resistivity CdTe. • DAP and eA peaks dominate the luminescence with their intensities anti-correlated. - Abstract: Both undoped ZnTe and CdTe bulk single crystals are grown under Te-saturated conditions from the solution and melt, respectively. To give an insight into the variation of the electrical properties, the defects structures in both tellurides are discussed. According to the actual growth velocities and the entire cooling history, tellurium interstitials (Te{sub i}) and Zinc vacancies (V{sub Zn}) are proposed as the dominant grown-in defects, account for the low resistivity of p-type ZnTe. However, relatively high pulling rates and slow cooling-down processes result in tellurium anti-sites (Te{sub Cd}) as the principle grown-in defects, leading to the high resistivity of light n-type CdTe. Further low-temperature (8.6 K) photoluminescence spectra of both tellurides are obtained. The donor–acceptor pair (DAP) and recombination of free electron to neutral acceptor (eA) dominate the luminescence, however, with their intensities are anti-correlated. eA is superior to DAP in undoped Te-rich ZnTe, suggests a high concentration of Te{sub i} or V{sub Zn}. On the contrary, DAP is the principal emission for undoped Te-rich CdTe. In addition, V-line is clearly identified in undoped Te-rich ZnTe, which possibly associated with V{sub Zn} or close Frenkel pair V{sub Zn}–Zn{sub i}.

  2. High luminescent fibers with hybrid SiO2-coated CdTe nanocrystals fabricated by electrospinning technique

    International Nuclear Information System (INIS)

    Cao, Yongqiang; Liu, Ning; Yang, Ping; Shi, Ruixia; Ma, Qian; Zhang, Aiyu; Zhu, Yuanna; Wang, Junpeng; Wang, Jianrong

    2015-01-01

    The polyvinylpyrrolidone (PVP) hybrid luminescent micro-/nanofibers doped with the novel hybrid SiO 2 -coated CdTe nanocrystals (HS-CdTe NCs) have been fabricated for the first time via the electrospinning technique. The morphologies and photoluminescence (PL) emissions of HS-CdTe/PVP micro-/nanofibers prepared by doping the HS-CdTe NCs with the different PL peak wavelength (571, 616, and 643 nm) in PVP fibers were investigated by optical and PL microscope. The results revealed that all the HS-CdTe/PVP hybrid fibers showed an ultralong length for several hundreds of micrometers and a relatively uniform diameter of 1000 ∼ 1200 nm. The hybrid fibers displayed a wavelength-tunable PL emission, determining by the PL of doped HS-CdTe NCs. Moreover, similar to the original PL properties of HS-CdTe NCs before the electrospinning, the HS-CdTe/PVP fibers also showed a series of superior PL properties, such as narrow and symmetry PL spectrum, high, and uniform brightness. For comparison purpose, we also prepared three CdTe/PVP hybrid fibers by doping the 553 nm, 600 nm, and 633 nm PL-emitting CdTe NCs respectively in PVP electrospinning fibers. The characterization results showed that, the obtained three CdTe/PVP hybrid fibers had a basically satisfactory micro-/nanofiber morphology with a long length and relatively uniform diameter, but all the fibers exhibited very weak PL emissions. The enormous contrast in PL properties between HS-CdTe/PVP and CdTe/PVP fibers should mainly be ascribed to the different connection modes of ligands with the NCs and the passivation effect of inert hybrid silica shell on HS-CdTe. It is hopeful that the high luminescent HS-CdTe/PVP micro-/nanofibers with the tunable PL peak wavelength would be a good candidate in the optical sensor, light-emitting devices (LEDs), nanometer-scale waveguides, and the other related photonic materials. - Highlights: • The HS-CdTe/PVP electrospun hybrid fibers were fabricated for the first time. • The

  3. A 2D 4×4 Channel Readout ASIC for Pixelated CdTe Detectors for Medical Imaging Applications.

    Science.gov (United States)

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Martínez, Ricardo; Puigdengoles, Carles

    2015-10-01

    We present a 16-channel readout integrated circuit (ROIC) with nanosecond-resolution time to digital converter (TDC) for pixelated Cadmium Telluride (CdTe) gamma-ray detectors. The 4 × 4 pixel array ROIC is the proof of concept of the 10 × 10 pixel array readout ASIC for positron-emission tomography (PET) scanner, positron-emission mammography (PEM) scanner, and Compton gamma camera. The electronics of each individual pixel integrates an analog front-end with switchable gain, an analog to digital converter (ADC), configuration registers, and a 4-state digital controller. For every detected photon, the pixel electronics provides the energy deposited in the detector with 10-bit resolution, and a fast trigger signal for time stamp. The ASIC contains the 16-pixel matrix electronics, a digital controller, five global voltage references, a TDC, a temperature sensor, and a band-gap based current reference. The ASIC has been fabricated with TSMC 0.25 μ m mixed-signal CMOS technology and occupies an area of 5.3 mm × 6.8 mm. The TDC shows a resolution of 95.5 ps, a precision of 600 ps at full width half maximum (FWHM), and a power consumption of 130 μ W. In acquisition mode, the total power consumption of every pixel is 200 μ W. An equivalent noise charge (ENC) of 160 e - RMS at maximum gain and negative polarity conditions has been measured at room temperature.

  4. Portable gamma- and X-ray analyzers based on CdTe p-i-n detectors

    CERN Document Server

    Khusainov, A K; Bahlanov, S V; Derbin, A V; Ivanov, V V; Lysenko, V V; Morozov, F; Mouratov, V G; Muratova, V N; Petukhov, Y A; Pirogov, A M; Polytsia, O P; Saveliev, V D; Solovei, V A; Yegorov, K A; Zhucov, M P

    1999-01-01

    Several portable instruments are designed using previously reported CdTe detector technology. These can be divided into three groups according to their energy ranges: (1) 3-30 keV XRF analyzers, (2) 5-120 keV wide range XRF analyzers and (3) gamma-ray spectrometers for operation up to 1500 keV. These instruments are used to inspect several hundreds of samples in situ during a working day in applications such as a metal alloy verification at customs control. Heavy metals are identified through a 3-100 mm thick package with these instruments. Surface contamination by heavy metals (for example toxins such as Hg, Th and Pb in housing environmental control), the determination of Pb concentration in gasoline, geophysical control in mining, or nuclear material control are other applications. The weight of these XRF probes is about 1 kg and two electronic designs are used: one with embedded computer and another based on a standard portable PC. The instruments have good precision and high productivity for measurements...

  5. Probing Defects in a Small Pixellated CdTe Sensor Using an Inclined Mono Energetic X-Ray Micro Beam

    Science.gov (United States)

    Fröjdh, Erik; Fröjdh, C.; Gimenez, E. N.; Krapohl, D.; Maneuski, D.; Norlin, B.; O'Shea, V.; Wilhelm, H.; Tartoni, N.; Thungström, G.; Zain, R. M.

    2013-08-01

    High quantum efficiency is important in X-ray imaging applications. This means using high-Z sensor materials. Unfortunately many of these materials suffer from defects that cause non-ideal charge transport. In order to increase the understanding of these defects, we have mapped the 3D response of a number of defects in two 1 mm thick CdTe sensors with different pixel sizes (55 μm and 110 μm) using a monoenergetic microbeam at 79 keV. The sensors were bump bonded to Timepix read out chips. Data was collected in photon counting as well as time-over-threshold mode. The time-over-threshold mode is a very powerful tool to investigate charge transport properties and fluorescence in pixellated detectors since the signal from the charge that each photon deposits in each pixel can be analyzed. Results show distorted electrical field around the defects, indications of excess leakage current and large differences in behavior between electron collection and hole collection mode. The experiments were carried out on the Extreme Conditions Beamline I15 at Diamond Light Source.

  6. Caliste-SO, a CdTe based spectrometer for bright solar event observations in hard X-rays

    Energy Technology Data Exchange (ETDEWEB)

    Meuris, A., E-mail: aline.meuris@cea.fr [CEA-Irfu – CEA Saclay, F-91191 Gif-sur-Yvette Cedex (France); Limousin, O.; Gevin, O.; Blondel, C.; Martignac, J. [CEA-Irfu – CEA Saclay, F-91191 Gif-sur-Yvette Cedex (France); Vassal, M.-C.; Soufflet, F.; Fiant, N. [3D Plus – 408 rue Hélène Boucher, F-78532 Buc Cedex (France); Bednarzik, M.; Stutz, S. [Paul Scherrer Institute (PSI), Laboratory for Micro- and Nanotechnology, 5232 Villigen (Switzerland); Grimm, O.; Commichau, V. [ETH Zurich, Institute for Particle Physics, Schafmattstrasse 20, 8093 Zurich (Switzerland)

    2015-07-01

    Caliste-SO is a CdTe hybrid detector designed to be used as a spectrometer for a hard X-ray Fourier telescope. The imaging technique was implemented in the Yohkoh satellite in 1991 and the RHESSI satellite in 2002 to achieve arc-second angular resolution images of solar flares with spectroscopic capabilities. The next generation of such instruments will be the Spectrometer Telescope Imaging X-rays (STIX) on-board the Solar Orbiter mission adopted by the European Space Agency in 2011 for launch in 2017. The design and performance of Caliste-SO allows both high spectral resolution and high count rate measurements from 4 to 150 keV with limited demands on spacecraft resources such as mass, power and volume (critical for interplanetary missions). The paper reports on the flight production of the Caliste-SO devices for STIX, describing the test facilities built-up in Switzerland and France. It illustrates some results obtained with the first production samples that will be mounted in the STIX engineering model.

  7. Biaxially oriented CdTe films on glass substrate through nanostructured Ge/CaF2 buffer layers

    Science.gov (United States)

    Lord, R. J.; Su, P.-Y.; Bhat, I.; Zhang, S. B.; Lu, T.-M.; Wang, G.-C.

    2015-09-01

    Heteroepitaxial CdTe films were grown by metal organic chemical vapor deposition on glass substrates through nanostructured Ge/CaF2 buffer layers which were biaxially oriented. It allows us to explore the structural properties of multilayer biaxial semiconductor films which possess small angle grain boundaries and to test the principle of a solar cell made of such low-cost, low-growth-temperature semiconductor films. Through the x-ray diffraction and x-ray pole figure analysis, the heteroepitaxial relationships of the mutilayered films are determined as [111] in the out-of-plane direction and CdTe//Ge//{ }{{{CaF}}2} in the in-plane direction. The I-V curves measured from an ITO/CdS/CdTe/Ge/CaF2/glass solar cell test structure shows a power conversion efficiency of ˜η = 1.26%, illustrating the initial success of such an approach. The observed non-ideal efficiency is believed to be due to a low shunt resistance and high series resistance as well as some residual large-angle grain boundary effects, leaving room for significant further improvement.

  8. Electrodeposition of CdTe thin films onto n-Si(1 0 0): nucleation and growth mechanisms

    International Nuclear Information System (INIS)

    Gomez, H.; Henriquez, R.; Schrebler, R.; Cordova, R.; Ramirez, D.; Riveros, G.; Dalchiele, E.A.

    2005-01-01

    The mechanisms related to the initial stages of the nucleation and growth of cadmium telluride (CdTe) thin films on the rough face side of a (1 0 0) monocrystalline n-type silicon have been studied as a function of different potential steps that varied from an initial value of -0.200 V to values comprised between -0.515 and -0.600 V versus saturated calomel electrode (SCE). The analysis of the corresponding potentiostatic j/t transients suggests that the main phenomena involved at short times is the formation of a Te-Cd bi-layer (BL). For potentials below -0.540 V, the formation of this bi-layer can be considered independent of potential. At greater times, the mechanisms is controlled by two process: (i) progressive nucleation three dimensional charge transfer controlled growth (PN-3D) ct and (ii) progressive nucleation three dimensional diffusion controlled growth (PN-3D) diff , both giving account for the formation of conical and hemispherical nuclei, respectively. Ex situ AFM images of the surface seem to support these assumptions

  9. All-inorganic perovskite nanocrystal assisted extraction of hot electrons and biexcitons from photoexcited CdTe quantum dots.

    Science.gov (United States)

    Mondal, Navendu; De, Apurba; Samanta, Anunay

    2018-01-03

    Excitation of semiconductor quantum dots (QDs) by photons possessing energy higher than the band-gap creates a hot electron-hole pair, which releases its excess energy as waste heat or under certain conditions (when hν > 2E g ) produces multiple excitons. Extraction of these hot carriers and multiple excitons is one of the key strategies for enhancing the efficiency of QD-based photovoltaic devices. However, this is a difficult task as competing carrier cooling and relaxation of multiple excitons (through Auger recombination) are ultrafast processes. Herein, we study the potential of all-inorganic perovskite nanocrystals (NCs) of CsPbX 3 (X = Cl, Br) as harvesters of these short-lived species from photo-excited CdTe QDs. The femtosecond transient absorption measurements show CsPbX 3 mediated extraction of both hot and thermalized electrons of the QDs (under a low pump power) and (under a high pump fluence) extraction of multiple excitons prior to their Auger assisted recombination. A faster timescale of thermalized electron transfer (∼2 ps) and a higher extraction efficiency of hot electrons (∼60%) are observed in the presence of CsPbBr 3 . These observations demonstrate the potential of all-inorganic perovskite NCs in the extraction of these short-lived energy rich species implying that complexes of the QDs and perovskite NCs are better suited for improving the efficiency of QD-sensitized solar cells.

  10. Fluorescence enhancement of CdTe MPA-capped quantum dots by glutathione for hydrogen peroxide determination.

    Science.gov (United States)

    Rodrigues, S Sofia M; Ribeiro, David S M; Molina-Garcia, L; Ruiz Medina, A; Prior, João A V; Santos, João L M

    2014-05-01

    The manipulation of the surface chemistry of semiconductor nanocrystals has been exploited to implement distinct sensing strategies in many analytical applications. In this work, reduced glutathione (GSH) was added at reaction time, as an electron-donor ligand, to markedly increase the quantum yield and the emission efficiency of MPA-capped CdTe quantum dots. The developed approach was employed in the implementation of an automated flow methodology for hydrogen peroxide determination, as this can oxidize GSH preventing its surface passivating effect and producing a manifest fluorescence quenching. After optimization, linear working calibration curve for hydrogen peroxide concentrations between 0.0025% and 0.040% were obtained (n=6), with a correlation coefficient of 0.9975. The detection limit was approximately 0.0012%. The developed approach was employed in the determination of H₂O₂ in contact lens preservation solutions and the obtained results complied with those furnished by the reference method, with relative deviations comprised between -1.18 and 4.81%. Copyright © 2014 Elsevier B.V. All rights reserved.

  11. Effect of thickness and cold substrate on transport properties of thermally evaporated CdTe thin films

    International Nuclear Information System (INIS)

    El-Mongy, A.Abd; Hashem, H.M.; Ramadan, A.A.

    2005-01-01

    The correlation between the structural characteristics (stoichiometry and crystallite size) of CdTe films and their electronic transport properties were the aims of the present study to bring attention to the dual importance of grain size and conversion of the semiconductivity type with changing film thickness. Two main parameters were considered: the substrate temperature and film thickness. Transport properties were influenced by grain boundaries as well as by native doping. Optical measurements showed two main direct transitions at energies: E 1 ∼1.55 eV (fundamental gap) and E 2 ∼2.49 eV (due to valence band splitting). Both transitions were found to be thickness dependent with a marked change at a film thickness of about 300 nm. In the case of low substrate temperature, the scaling relation between resistivity and grain size showed a deviation from linear behavior at a size of 20 nm and the transmission coefficient is reduced. Also, the deposition on cold substrate enhanced both dark and photoconductivity for films of thickness ≥300 nm. It is also proved that the carrier transport was affected by the transmission coef-ficient for carriers to pass a single grain boundary as well as the number of grain boundaries per mean free path. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Effect of thickness and cold substrate on transport properties of thermally evaporated CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    El-Mongy, A.Abd; Hashem, H.M.; Ramadan, A.A. [Physics Department, Faculty of Science, Helwan University, Helwan, Cairo (Egypt)

    2005-08-01

    The correlation between the structural characteristics (stoichiometry and crystallite size) of CdTe films and their electronic transport properties were the aims of the present study to bring attention to the dual importance of grain size and conversion of the semiconductivity type with changing film thickness. Two main parameters were considered: the substrate temperature and film thickness. Transport properties were influenced by grain boundaries as well as by native doping. Optical measurements showed two main direct transitions at energies: E{sub 1} {approx}1.55 eV (fundamental gap) and E{sub 2}{approx}2.49 eV (due to valence band splitting). Both transitions were found to be thickness dependent with a marked change at a film thickness of about 300 nm. In the case of low substrate temperature, the scaling relation between resistivity and grain size showed a deviation from linear behavior at a size of 20 nm and the transmission coefficient is reduced. Also, the deposition on cold substrate enhanced both dark and photoconductivity for films of thickness {>=}300 nm. It is also proved that the carrier transport was affected by the transmission coef-ficient for carriers to pass a single grain boundary as well as the number of grain boundaries per mean free path. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Specific recognition and fluorescent determination of aspirin by using core-shell CdTe quantum dot-imprinted polymers

    International Nuclear Information System (INIS)

    Wei, Xiao; Zhou, Zhiping; Hao, Tongfan; Lu, Kai; Dai, Jiangdong; Xu, Yeqing; Li, Hongji; Zheng, Xudong; Gao, Lin; Wang, Jixiang; Yan, Yongsheng; Zhu, Yanzhuo

    2015-01-01

    A molecularly imprinted polymer (MIP) was deposited on the surface of CdTe quantum dots (QDs) to act as a recognition element for aspirin. The MIP was synthesized from 3-aminopropyltriethoxysilane as the functional monomer, aspirin as the template, and tetraethoxysilane as the cross-linker via a sol–gel process that leads to surface imprinting. It is shown that the fraction of QDs and the polymerization process affect size and morphology of the MIP-coated QDs. The optical stability, effects of pH, detection time and selective determination of aspirin were optimized. The fluorescence intensity of the particles (photoexcited at 400 nm and measured at 628 nm) decreases linearly with increasing concentration of aspirin in the 2.0–50 μmol L −1 range. The limit of detection (at an S/N of 3) is 0.25 μmol L −1 . The method was successfully applied to the determination of aspirin in human urine and saliva. (author)

  14. Bridgman growth and assessment of CdTe and CdZnTe using the accelerated crucible rotation technique

    Energy Technology Data Exchange (ETDEWEB)

    Capper, P.; Harris, J.E.; O' Keefe, E.; Jones, C.L.; Ard, C.K.; Mackett, P.; Dutton, D. (Philips Infrared Defence Components, Southampton (United Kingdom))

    1993-01-30

    The Bridgman growth process for CdTe has been extended by applying the accelerated crucible rotation technique (ACRT). Modelling using ACRT has been extended to the 50 mm diameter required to produce grains large enough to yield CdTe(and Cd[sub 0.96]Zn[sub 0.04]Te) slices suitable for use in liquid phase epitaxy of Cd[sub x]Hg[sub 1-x]Te (CMT) layers. Two regimes are identified: ACRT parameter combinations which give maximum fluid velocities and that which maintains stable Ekman flow. Growth of crystals shows that larger single crystal regions are obtained when the Ekman flow is stable. Effects of changing the ampoule base shape have also been investigated. Techniques have been developed to produce 20 mm x 30 mm substrates oriented oriented close to the (111) direction. Assessment of these samples has included IR transmission, IR microscopy, defect etching, X-ray topography and X-ray diffraction curve width measurements. Chemical analyses have been carried out to determine impurity levels and matrix element distributions. Good quality CMT epitaxial layers, as demonstrated by good surface topography, electrical data and chemical analyses, have been grown onto material produced in this study. (orig.).

  15. 3D non-destructive fluorescent X-ray computed tomography (FXCT) with a CdTe array

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Chang Yeon; Lee, Won Ho; Kim, Young Hak [Dept. of Bio-convergence Engineering, Korea University Graduate School, Seoul (Korea, Republic of)

    2015-10-15

    In our research, the material was exposed to an X-ray and not only the conventional transmission image but also 3D images based on the information of characteristic X-ray detected by a 2D CdTe planar detector array were reconstructed. Since atoms have their own characteristic X-ray energy, our system was able to discriminate materials of even a same density if the materials were composed of different atomic numbers. We applied FXCT to distinguish various unknown materials with similar densities. The materials with similar densities were clearly distinguished in the 3D reconstructed images based on the information of the detected characteristic X-ray, while they were not discriminated from each other in the images based on the information of the detected transmission X-ray. In the fused images consisting of 3D transmitted and characteristic X-ray images, all of the positions, densities and atomic numbers of materials enclosed in plastic phantom or pipe were clearly identified by analyzing energy, position and amount of detected radiation.

  16. Rapid detection of malachite green in fish based on CdTe quantum dots coated with molecularly imprinted silica.

    Science.gov (United States)

    Wu, Le; Lin, Zheng-Zhong; Zhong, Hui-Ping; Peng, Ai-Hong; Chen, Xiao-Mei; Huang, Zhi-Yong

    2017-08-15

    A sensitive fluorescence sensor for the detection of malachite green (MG) was fabricated by grafting molecularly imprinted polymers (MIPs) onto the surface of CdTe quantum dots (QDs). The MIP-coated QDs were synthesized via a reverse microemulsion method using (3-aminopropyl)triethoxysilane (APTES) and tetraethyl orthosilicate (TEOS) as functional monomer and cross-linker, respectively. The optimum molar ratio of MG, functional monomer and cross-linker was 1:3:10. The MIP-coated QDs exhibited uniform spheres with diameter around 49nm and excellent fluorescence emission at λ ex 370nm. A linear relationship with two segments between the relative fluorescence intensities and the MG concentrations ranging from 0.08 to 20μmol·L -1 could be obtained with a detection limit of 12μg·kg -1 . The fluorescent probe was successfully applied to the determination of MG in fish samples with the spiked recoveries ranging from 94.3% to 109.5% which were in accordance with those of the measurement by HPLC-UV. Copyright © 2017 Elsevier Ltd. All rights reserved.

  17. Permethylated-β-Cyclodextrin Capped CdTe Quantum Dot and its Sensitive Fluorescence Analysis of Malachite Green.

    Science.gov (United States)

    Cao, Yujuan; Wei, Jiongling; Wu, Wei; Wang, Song; Hu, Xiaogang; Yu, Ying

    2015-09-01

    In the present work, the CdTe quantum dots were covalently conjugated with permethylated-β-cyclodextrin (OMe-β-CD) using 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide hydrochloride as cross-linking reagent. The obtained functional quantum dots (OMe-β-CD/QDs) showed highly luminescent, water solubility and photostability as well as good inclusion ability to malachite green. A sensitive fluorescence method was developed for the analysis of malachite green in different samples. The good linearity was 2.0 × 10(-7)-1.0 × 10(-5) mol/L and the limit of detect was 1.7 × 10(-8) mol/L. The recoveries for three environmental water samples were 92.0-108.2 % with relative standard deviation (RSD) of 0.24-1.87 %, while the recovery for the fish sample was 94.3 % with RSD of 1.04 %. The results showed that the present method was sensitive and convenient to determine malachite green in complex samples. Graphical Abstract The analytical mechanism of OMe-β-CD/QDs and its linear response to MG.

  18. CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications

    International Nuclear Information System (INIS)

    Szeles, Csaba

    2004-01-01

    Good detection efficiency and high energy-resolution make Cadmium Zinc Telluride (CdZnTe) and Cadmium Telluride (CdTe) detectors attractive in many room temperature X-ray and gamma-ray detection applications such as medical and industrial imaging, industrial gauging and non-destructive testing, security and monitoring, nuclear safeguards and non-proliferation, and astrophysics. Advancement of the crystal growth and device fabrication technologies and the reduction of bulk, interface and surface defects in the devices are crucial for the widespread practical deployment of Cd 1-x Zn x Te-based detector technology. Here we review the effects of bulk, interface and surface defects on charge transport, charge transport uniformity and device performance and the progress in the crystal growth and device fabrication technologies aiming at reducing the concentration of harmful defects and improving Cd 1-x Zn x Te detector performance. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. CdTe and CdZnTe detectors behavior in X-ray computed tomography conditions

    CERN Document Server

    Ricq, S; Garcin, M

    2000-01-01

    The application of CdTe and CdZnTe 2D array detectors for medical X-ray Computed Tomography (XCT) is investigated. Different metallic electrodes have been deposited on High-Pressure Bridgman Method CdZnTe and on Traveling Heater Method CdTe:Cl. These detectors are exposed to X-rays in the CT irradiation conditions and are characterized experimentally in current mode. Detectors performances such as sensitivity and response speed are studied. They are correlated with charge trapping and de-trapping. The trapped carrier space charges may influence the injection from the electrodes. This enables one to get information on the nature of the predominant levels involved. The performances achieved are encouraging: dynamic ranges higher than 4 decades and current decreases of 3 decades in 4 ms after X-ray beam cut-off are obtained. Nevertheless, these detectors are still limited by high trap densities responsible for the memory effect that makes them unsuitable for XCT.

  20. CdTe amplification nanoplatforms capped with thioglycolic acid for electrochemical aptasensing of ultra-traces of ATP

    Energy Technology Data Exchange (ETDEWEB)

    Shamsipur, Mojtaba, E-mail: mshamsipur@yahoo.com [Department of Chemistry, Razi University, P.O. Box 67149-67346, Kermanshah (Iran, Islamic Republic of); Farzin, Leila [Department of Analytical Chemistry, School of Chemistry, College of Science, University of Tehran, P.O. Box 14174-66191, Tehran (Iran, Islamic Republic of); Tabrizi, Mahmoud Amouzadeh [Research Center for Science and Technology in Medicine,Tehran University of Medical Sciences, P.O. Box 14197-33131, Tehran (Iran, Islamic Republic of); Shanehsaz, Maryam [Analytical Chemistry Research Laboratory, Mobin Shimi Azma Company, P.O. Box 14768-44949, Tehran (Iran, Islamic Republic of)

    2016-12-01

    A “signal off” voltammetric aptasensor was developed for the sensitive and selective detection of ultra-low levels of adenosine triphosphate (ATP). For this purpose, a new strategy based on the principle of recognition-induced switching of aptamers from DNA/DNA duplex to DNA/target complex was designed using thioglycolic acid (TGA)-capped CdTe quantum dots (QDs) as the signal amplifying nano-platforms. Owing to the small size, high surface-to-volume ratio and good conductivity, quantum dots were immobilized on the electrode surface for signal amplification. In this work, methylene blue (MB) adsorbed to DNA was used as a sensitive redox reporter. The intensity of voltammetric signal of MB was found to decrease linearly upon ATP addition over a concentration range of 0.1 nM to 1.6 μM with a correlation coefficient of 0.9924. Under optimized conditions, the aptasensor was able to selectively detect ATP with a limit of detection of 45 pM at 3σ. The results also demonstrated that the QDs-based amplification strategy could be feasible for ATP assay and presented a potential universal method for other small biomolecular aptasensors. - Highlights: • A “signal off” voltammetric aptasensor has been reported. • The DPV technique was used for the determination of ATP. • The determination of ATP up to 1.6 μM with a detection limit 45 pM, respectively.

  1. Caliste 64, a new CdTe micro-camera for hard X-ray spectro-imaging

    Science.gov (United States)

    Meuris, A.; Limousin, O.; Lugiez, F.; Gevin, O.; Blondel, C.; Pinsard, F.; Vassal, M. C.; Soufflet, F.; Le Mer, I.

    2009-10-01

    In the frame of the Simbol-X mission of hard X-ray astrophysics, a prototype of micro-camera with 64 pixels called Caliste 64 has been designed and several samples have been tested. The device integrates ultra-low-noise IDeF-X V1.1 ASICs from CEA and a 1 cm 2 Al Schottky CdTe detector from Acrorad because of its high uniformity and spectroscopic performance. The process of hybridization, mastered by the 3D Plus company, respects space applications standards. The camera is a spectro-imager with time-tagging capability. Each photon interacting in the semiconductor is tagged with a time, a position and an energy. Time resolution is better than 100 ns rms for energy deposits greater than 20 keV, taking into account electronic noise and technological dispersal of the front-end electronics. The spectrum summed across the 64 pixels results in an energy resolution of 664 eV fwhm at 13.94 keV and 842 eV fwhm at 59.54 keV, when the detector is cooled down to -10 °C and biased at -500 V.

  2. Caliste 64, a new CdTe micro-camera for hard X-ray spectro-imaging

    International Nuclear Information System (INIS)

    Meuris, A.; Limousin, O.; Lugiez, F.; Gevin, O.; Blondel, C.; Pinsard, F.; Vassal, M.C.; Soufflet, F.; Le Mer, I.

    2009-01-01

    In the frame of the Simbol-X mission of hard X-ray astrophysics, a prototype of micro-camera with 64 pixels called Caliste 64 has been designed and several samples have been tested. The device integrates ultra-low-noise IDeF-X V1.1 ASICs from CEA and a 1 cm 2 Al Schottky CdTe detector from Acrorad because of its high uniformity and spectroscopic performance. The process of hybridization, mastered by the 3D Plus company, respects space applications standards. The camera is a spectro-imager with time-tagging capability. Each photon interacting in the semiconductor is tagged with a time, a position and an energy. Time resolution is better than 100 ns rms for energy deposits greater than 20 keV, taking into account electronic noise and technological dispersal of the front-end electronics. The spectrum summed across the 64 pixels results in an energy resolution of 664 eV fwhm at 13.94 keV and 842 eV fwhm at 59.54 keV, when the detector is cooled down to -10 deg. C and biased at -500 V.

  3. Caliste 64, a new CdTe micro-camera for hard X-ray spectro-imaging

    Energy Technology Data Exchange (ETDEWEB)

    Meuris, A. [CEA, Irfu, Service d' Astrophysique, Bat. 709, Orme des Merisiers, F-91191 Gif-sur-Yvette (France)], E-mail: aline.meuris@cea.fr; Limousin, O. [CEA, Irfu, Service d' Astrophysique, Bat. 709, Orme des Merisiers, F-91191 Gif-sur-Yvette (France); Lugiez, F.; Gevin, O. [CEA, Irfu, Service d' Electronique, de Detecteurs et d' Informatique, F-91191 Gif-sur-Yvette (France); Blondel, C.; Pinsard, F. [CEA, Irfu, Service d' Astrophysique, Bat. 709, Orme des Merisiers, F-91191 Gif-sur-Yvette (France); Vassal, M.C.; Soufflet, F. [3D Plus, 641 rue Helene Boucher, F-78532 Buc (France); Le Mer, I. [CEA, Irfu, Service d' Astrophysique, Bat. 709, Orme des Merisiers, F-91191 Gif-sur-Yvette (France)

    2009-10-21

    In the frame of the Simbol-X mission of hard X-ray astrophysics, a prototype of micro-camera with 64 pixels called Caliste 64 has been designed and several samples have been tested. The device integrates ultra-low-noise IDeF-X V1.1 ASICs from CEA and a 1 cm{sup 2} Al Schottky CdTe detector from Acrorad because of its high uniformity and spectroscopic performance. The process of hybridization, mastered by the 3D Plus company, respects space applications standards. The camera is a spectro-imager with time-tagging capability. Each photon interacting in the semiconductor is tagged with a time, a position and an energy. Time resolution is better than 100 ns rms for energy deposits greater than 20 keV, taking into account electronic noise and technological dispersal of the front-end electronics. The spectrum summed across the 64 pixels results in an energy resolution of 664 eV fwhm at 13.94 keV and 842 eV fwhm at 59.54 keV, when the detector is cooled down to -10 deg. C and biased at -500 V.

  4. Spectroscopic investigations on the effect of N-Acetyl-L-cysteine-Capped CdTe Quantum Dots on catalase

    Science.gov (United States)

    Sun, Haoyu; Yang, Bingjun; Cui, Erqian; Liu, Rutao

    2014-11-01

    Quantum dots (QDs) are recognized as some of the most promising semiconductor nanocrystals in biomedical applications. However, the potential toxicity of QDs has aroused wide public concern. Catalase (CAT) is a common enzyme in animal and plant tissues. For the potential application of QDs in vivo, it is important to investigate the interaction of QDs with CAT. In this work, the effect of N-Acetyl-L-cysteine-Capped CdTe Quantum Dots with fluorescence emission peak at 612 nm (QDs-612) on CAT was investigated by fluorescence, synchronous fluorescence, fluorescence lifetime, ultraviolet-visible (UV-vis) absorption and circular dichroism (CD) techniques. Binding of QDs-612 to CAT caused static quenching of the fluorescence, the change of the secondary structure of CAT and the alteration of the microenvironment of tryptophan residues. The association constants K were determined to be K288K = 7.98 × 105 L mol-1 and K298K = 7.21 × 105 L mol-1. The interaction between QDs-612 and CAT was spontaneous with 1:1 stoichiometry approximately. The CAT activity was also inhibited for the bound QDs-612. This work provides direct evidence about enzyme toxicity of QDs-612 to CAT in vitro and establishes a new strategy to investigate the interaction between enzyme and QDs at a molecular level, which is helpful for clarifying the bioactivities of QDs in vivo.

  5. Capillary electrophoresis-driven synthesis of water-soluble CdTe quantum dots in nanoliter scale

    Science.gov (United States)

    Nejdl, Lukas; Hynek, David; Adam, Vojtech; Vaculovicova, Marketa

    2018-04-01

    ‘Green nanotechnology’ is a term used for the design of nanomaterials and processes that reduce or eliminate the use and/or generation of hazardous substances. In this paper, a capillary electrophoresis (CE)-driven synthesis of CdTe quantum dots (QDs) and their subsequent conjugation with a metal-binding protein metallothionein (isofom MT1) is reported. Even though the toxic materials (cadmium and potassium borohydride) were used for synthesis, the proposed method can be labeled as ‘environmentally friendly’ because the whole process (synthesis of QDs and MT1 conjugation) was carried out under mild conditions: ultra-low volume (nanoliter scale), relatively low temperature (50 °C), atmospheric pressure, and completed in a short time (under 90 s). Prepared QDs were also characterized by classical fluorescence spectroscopy and transmission electron microscopy. This study opens up new possibilities for the utilization of classical CE in the synthesis of nanoparticles and on-line labeling of biomolecules in the nanoliter scale in short period of time.

  6. Laser-excited optical emission response of CdTe quantum dot/polymer nanocomposite under shock compression

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Pan [LNM, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States); Kang, Zhitao; Summers, Christopher J. [Phosphor Technology Center of Excellence, Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia 30332-0826 (United States); Bansihev, Alexandr A.; Christensen, James M.; Dlott, Dana D. [School of Chemical Sciences and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Breidenich, Jennifer; Scripka, David A.; Thadhani, Naresh N. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States); Zhou, Min, E-mail: min.zhou@gatech.edu [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States)

    2016-01-04

    Laser-driven shock compression experiments and corresponding finite element method simulations are carried out to investigate the blueshift in the optical emission spectra under continuous laser excitation of a dilute composite consisting of 0.15% CdTe quantum dots by weight embedded in polyvinyl alcohol polymer. This material is a potential candidate for use as internal stress sensors. The analyses focus on the time histories of the wavelength blue-shift for shock loading with pressures up to 7.3 GPa. The combined measurements and calculations allow a relation between the wavelength blueshift and pressure for the loading conditions to be extracted. It is found that the blueshift first increases with pressure to a maximum and subsequently decreases with pressure. This trend is different from the monotonic increase of blueshift with pressure observed under conditions of quasistatic hydrostatic compression. Additionally, the blueshift in the shock experiments is much smaller than that in hydrostatic experiments at the same pressure levels. The differences in responses are attributed to the different stress states achieved in the shock and hydrostatic experiments and the time dependence of the mechanical response of the polymer in the composite. The findings offer a potential guide for the design and development of materials for internal stress sensors for shock conditions.

  7. Cd-Te-In oxide thin films as possible transparent buffer layer in CdTe based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Castro-Rodriguez, R; Camacho, J M; Pena, J L [Applied Physics Department, CINVESTAV-IPN Merida, C.P. 97310, Merida, Yucatan (Mexico); Martel, A; Mendez-Gamboa, J, E-mail: romano@mda.cinvestav.m [Facultad de Ingenieria, Universidad Autonoma de Yucatan. AP 150 Cordemex, 97310 Merida, Yucatan (Mexico)

    2009-05-01

    Cd-Te-In-oxide thin films were grown by Pulsed Laser Deposition (PLD) technique using CdTe powder embedded in a matrix of indium metallic as target. The films were deposited at different oxygen pressures (P{sub o2}) from 15 to 50 mTorr at substrate temperature of 420{sup 0}C. Sheet resistance (R{sub sheet}) and transmission spectrum were measured as a function of P{sub o2}. From measurements of optical transmission, the Photonic Flux Density (PFD) spectrum were obtained and the integral of these PFD for each film were evaluated between energy range of 1.5 eV and 2.4 eV for obtain the amount of photons that can be transferred across the film in this range of solar energy spectrum. These values were evaluated over the R{sub sheet} to be used as a figure of merit. The best choice in our conditions was the films with P{sub o2} =28.5 mTorr, where the figure of merit reaches the maximum value.

  8. Influences of the CdS nanoparticles grown strategies on CdTe nanorods array films: A comparison between successive ionic layer absorption and reaction and chemical bath deposition

    International Nuclear Information System (INIS)

    Wang, Jun; Zhou, Xiaoming; Lv, Pin; Yang, Lihua; Ding, Dong; Niu, Jiasheng; Liu, Li; Li, Xue; Fu, Wuyou; Yang, Haibin

    2016-01-01

    The cadmium sulfide (CdS) film is deposited on the surface of cadmium telluride (CdTe) nanorods (NRs) by two different methods, successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) techniques. The influence of the deposition parameters on the properties of the films is investigated. Compared to SILAR, CBD is a simple and time saving technique, which can ensure full coverage and better growth of CdS on the surface of CdTe NRs. The photovoltaic characteristics of CdS sensitized CdTe films are also investigated. It is found that the CdTe/CBD-CdS thin film demonstrates excellent photoelectrical properties, which is ascribed to the large absorption coefficient of the material, indicating the potential applications in solar cells.

  9. Study of the Mg incorporation in CdTe for developing wide band gap Cd1−xMgxTe thin films for possible use as top-cell absorber in a tandem solar cell

    International Nuclear Information System (INIS)

    Martínez, Omar S.; Millán, Aduljay Remolina; Huerta, L.; Santana, G.; Mathews, N.R.; Ramon-Garcia, M.L.; Morales, Erik R.; Mathew, X.

    2012-01-01

    Highlights: ► Thin films of Cd 1−x Mg x Te with high spatial uniformity and band gap in the range of 1.6–1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg. ► Obtained Cd 1−x Mg x Te films have the structural characteristics of the CdTe, evidence of the change in atomic scattering due to incorporation of Mg was observed. ► XRD and XPS data confirmed the incorporation of Mg in the lattice of CdTe. ► SEM images revealed the impact of Mg incorporation on the morphology of the films, the changes in grain size and grain morphology are noticeable. - Abstract: Thin films of Cd 1−x Mg x Te with band gap in the range of 1.6–1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg on glass substrates heated at 300 °C. Different experimental techniques such as XRD, UV–vis spectroscopy, SEM, and XPS were used to study the effect of Mg incorporation into the lattice of CdTe. The band gap of the films showed a clear tendency to increase as the Mg content in the film is increased. The Cd 1−x Mg x Te films maintain all the structural characteristics of the CdTe, however, diminishing of intensity for the XRD patterns is observed due to both change in preferential orientation and change in atomic scattering due to the incorporation of Mg. SEM images showed significant evidences of morphological changes due to the presence of Mg. XRD, UV–vis spectroscopy, and XPS data confirmed the incorporation of Mg in the lattice of CdTe. The significant increase in band gap of CdTe due to incorporation of Mg suggests that the Cd 1−x Mg x Te thin film is a candidate material to use as absorber layer in the top-cell of a tandem solar cell.

  10. Study of the Mg incorporation in CdTe for developing wide band gap Cd{sub 1-x}Mg{sub x}Te thin films for possible use as top-cell absorber in a tandem solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, Omar S. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Universidad Politecnica del Estado de Guerrero, Comunidad de Puente Campuzano, C.P. 40325 Taxco de Alarcon, Guerrero (Mexico); Millan, Aduljay Remolina [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Huerta, L.; Santana, G. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico. C.P 04510 Mexico D.F. (Mexico); Mathews, N.R.; Ramon-Garcia, M.L.; Morales, Erik R. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Mathew, X., E-mail: xm@cie.unam.mx [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Thin films of Cd{sub 1-x}Mg{sub x}Te with high spatial uniformity and band gap in the range of 1.6-1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg. Black-Right-Pointing-Pointer Obtained Cd{sub 1-x}Mg{sub x}Te films have the structural characteristics of the CdTe, evidence of the change in atomic scattering due to incorporation of Mg was observed. Black-Right-Pointing-Pointer XRD and XPS data confirmed the incorporation of Mg in the lattice of CdTe. Black-Right-Pointing-Pointer SEM images revealed the impact of Mg incorporation on the morphology of the films, the changes in grain size and grain morphology are noticeable. - Abstract: Thin films of Cd{sub 1-x}Mg{sub x}Te with band gap in the range of 1.6-1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg on glass substrates heated at 300 Degree-Sign C. Different experimental techniques such as XRD, UV-vis spectroscopy, SEM, and XPS were used to study the effect of Mg incorporation into the lattice of CdTe. The band gap of the films showed a clear tendency to increase as the Mg content in the film is increased. The Cd{sub 1-x}Mg{sub x}Te films maintain all the structural characteristics of the CdTe, however, diminishing of intensity for the XRD patterns is observed due to both change in preferential orientation and change in atomic scattering due to the incorporation of Mg. SEM images showed significant evidences of morphological changes due to the presence of Mg. XRD, UV-vis spectroscopy, and XPS data confirmed the incorporation of Mg in the lattice of CdTe. The significant increase in band gap of CdTe due to incorporation of Mg suggests that the Cd{sub 1-x}Mg{sub x}Te thin film is a candidate material to use as absorber layer in the top-cell of a tandem solar cell.

  11. Precipitação seletiva de tamanhos em nanopartículas semicondutoras coloidais de CdTe e CdSe: um estudo por espectroscopia UV-VIS

    Directory of Open Access Journals (Sweden)

    Lívia Cristina de Souza Viol

    2011-01-01

    Full Text Available The post-preparative size-selective precipitation technique was applied in CdTe and CdSe semiconductor nanocrystals prepared via colloidal route in water. The synthesis of CdTe and CdSe nanoparticles and the effect of the post-preparative size-selective precipitation have been characterized mainly by mean of ultraviolet and visible absorption spectroscopy (UV-Vis. It was demonstrated that the size-selective precipitation are able to isolate particles of different sizes and purify the nanoparticles as well.

  12. Red-shift of the photoluminescent emission peaks of CdTe quantum dots due to the synergistic interaction with carbon quantum dot mixtures

    International Nuclear Information System (INIS)

    Pelayo, E; Zazueta, A; López-Delgado, R; Ayón, A; Saucedo, E; Ruelas, R

    2016-01-01

    We report the relatively large red-shift effect observed in down-shifting carbon quantum dots (CQDs) that is anticipated to have a positive impact on the power conversion efficiency of solar cells. Specifically, with an excitation wavelength of 390 nm, CQDs of different sizes, exhibited down-shifted emission peaks centered around 425 nm. However, a solution comprised of a mixture of CQDs of different sizes, was observed to have an emission peak red-shifted to 515 nm. The effect could arise when larger carbon quantum dots capture the photons emitted by their smaller counterparts followed by the subsequent re-emission at longer wavelengths. Furthermore, the red-shift effect was also observed in CdTe QDs when added to a solution with the aforementioned mixture of Carbon QDs. Thus, whereas a solution solely comprised of a collection of CdTe QDs of different sizes, exhibited a down-shifted photoluminescence centered around 555 nm, the peak was observed to be further red-shifted to 580 nm when combined with the solution of CQDs of different sizes. The quantum dot characterization included crystal structure analysis as well as photon absorption and photoluminescence wavelengths. Subsequently, the synthesized QDs were dispersed in a polymeric layer of poly-methyl-methacrylate (PMMA) and incorporated on functional and previously characterized solar cells, to quantify their influence in the electrical performance of the photovoltaic structures. We discuss the synthesis and characterization of the produced Carbon and CdTe QDs, as well as the observed improvement in the power conversion efficiency of the fabricated photovoltaic devices. (paper)

  13. Fine-Pitch CdTe Detector for Hard X-Ray Imaging and Spectroscopy of the Sun with the FOXSI Rocket Experiment

    Science.gov (United States)

    Ishikawa, Shin-nosuke; Katsuragawa, Miho; Watanabe, Shin; Uchida, Yuusuke; Takeda, Shin'lchiro; Takahashi, Tadayuki; Saito, Shinya; Glesener, Lindsay; Bultrago-Casas, Juan Camilo; Krucker, Sam; hide

    2016-01-01

    We have developed a fine-pitch hard X-ray (HXR) detector using a cadmium telluride (CdTe) semiconductor for imaging and spectroscopy for the second launch of the Focusing Optics Solar X-ray Imager (FOXSI). FOXSI is a rocket experiment to perform high sensitivity HXR observations from 4 to 15 keV using the new technique of HXR focusing optics. The focal plane detector requires less than 100 micrometers position resolution (to take advantage of the angular resolution of the optics) and approximately equals 1 keV energy resolution (full width at half maximum (FWHM)) for spectroscopy down to 4 keV, with moderate cooling (greater than -30 C). Double-sided silicon strip detectors were used for the first FOXSI flight in 2012 to meet these criteria. To improve the detectors' efficiency (66% at 15 keV for the silicon detectors) and position resolution of 75 micrometers for the second launch, we fabricated double-sided CdTe strip detectors with a position resolution of 60 micrometers and almost 100% efficiency for the FOXSI energy range. The sensitive area is 7.67 mm x 7.67 mm, corresponding to the field of view of 791'' x 791''. An energy resolution of 1 keV (FWHM) and low-energy threshold of approximately equals 4 keV were achieved in laboratory calibrations. The second launch of FOXSI was performed on 11 December 2014, and images from the Sun were successfully obtained with the CdTe detector. Therefore, we successfully demonstrated the detector concept and the usefulness of this technique for future HXR observations of the Sun.

  14. CdTe quantum dots functionalized with 4-amino-2,2,6,6-tetramethylpiperidine-N-oxide as luminescent nanoprobe for the sensitive recognition of bromide ion

    Energy Technology Data Exchange (ETDEWEB)

    Adegoke, Oluwasesan [Department of Chemistry, Rhodes University, Grahamstown 6140 (South Africa); Hosten, Eric; McCleland, Cedric [Department of Chemistry, Nelson Mandela Metropolitan University (South Campus), Port Elizabeth 6031 (South Africa); Nyokong, Tebello, E-mail: t.nyokong@ru.ac.za [Department of Chemistry, Rhodes University, Grahamstown 6140 (South Africa)

    2012-04-06

    Graphical abstract: A bromide ion-selective modified nanoprobe sensor based on 4-amino-2,2,6,6-tetramethylpiperidine-N-oxide (4AT)-functionalized CdTe quantum dots (QDs-4AT) showed a high selectivity and sensitivity for the determination of bromide ion using fluorescence recovery. Highlights: Black-Right-Pointing-Pointer Water soluble CdTe quantum dots interact with tetramethylpiperidine-N-oxide. Black-Right-Pointing-Pointer Quantum dots fluorescence is quenched by the radical. Black-Right-Pointing-Pointer In the presence of bromide ions the fluorescence is restored. Black-Right-Pointing-Pointer The sensor is more selective to bromine ions than other common ions. - Abstract: A novel bromide ion-selective modified nanoprobe sensor based on 4-amino-2,2,6,6-tetramethylpiperidine-N-oxide (4AT)-functionalized CdTe quantum dots (QDs-4AT) has been developed. Fluorescence quenching of the QDs by 4AT was observed. The functionalized QDs-4AT nanoprobe allowed a highly sensitive determination of bromide ion via analyte-induced change in the photoluminescence (fluorescence recovery) of the modified QDs. A detection limit of 0.6 nM of bromide ion was obtained, while the interfering effect of other inorganic cations and anions was investigated to examine the selectivity of the nanoprobe. The linear range was between 0.01 and 0.13 {mu}M. Combined fluorescence lifetime and electron paramagnetic resonance measurements confirmed electron transfer processes between bromide ion and QDs-4AT.

  15. Interface Study of ITO/ZnO and ITO/SnO2 Complex Transparent Conductive Layers and Their Effect on CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    Tingliang Liu

    2013-01-01

    Full Text Available Transparent ITO/ZnO and ITO/SnO2 complex conductive layers were prepared by DC- and RF-magnetron sputtering. Their structure and optical and electronic performances were studied by XRD, UV/Vis Spectroscopy, and four-probe technology. The interface characteristic and band offset of the ITO/ZnO, ITO/SnO2, and ITO/CdS were investigated by Ultraviolet Photoelectron Spectroscopy (UPS and X-ray Photoelectron Spectroscopy (XPS, and the energy band diagrams have also been determined. The results show that ITO/ZnO and ITO/SnO2 films have good optical and electrical properties. The energy barrier those at the interface of ITO/ZnO and ITO/SnO2 layers are almost 0.4 and 0.44 eV, which are lower than in ITO/CdS heterojunctions (0.9 eV, which is beneficial for the transfer and collection of electrons in CdTe solar cells and reduces the minority carrier recombination at the interface, compared to CdS/ITO. The effects of their use in CdTe solar cells were studied by AMPS-1D software simulation using experiment values obtained from ZnO, ITO, and SnO2. From the simulation, we confirmed the increase of Eff, FF, Voc, and Isc by the introduction of ITO/ZnO and ITO/SnO2 layers in CdTe solar cells.

  16. Physical properties of the heterojunction MoOx/n-CdTe as a function of the parameters of CdTe crystals

    Science.gov (United States)

    Mostovyi, Andrii I.; Solovan, Mykhailo M.; Brus, Viktor V.; Pullerits, Toǧnu; Maryanchuk, Pavlo D.

    2018-01-01

    MoOx/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto three different n-type CdTe substrates (ρ1=0.4 Ωṡcm, ρ2=10 Ωṡcm, ρ3=40 Ωṡcm) by DC reactive magnetron sputtering. The height of the potential barrier and series resistance of the MoOx/CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases.

  17. Electrodeposición de películas delgadas de CdTe sobre electrodo de oro en soluciones acuosas de EDTA-Amonio

    OpenAIRE

    Montilla, Milagro; Alarcón, Domingo; Ortiz, Reynaldo

    2007-01-01

    En este trabajo se muestran los resultados obtenidos del estudio del crecimiento electroquímico y caracterización de películas delgadas del semiconductor CdTe. El crecimiento se realizó mediante la electrodeposición catódica a potencial constante a partir de soluciones acuosas alcalinas de las especies precursoras TeO3(2-) y Cd2+ y EDTA como agente acomplejante para el Cd2+. La composición de las películas se determinó por espectroscopía de emisión atómica con plasma inductivamente acoplado (...

  18. Improvements in CdTe- and CIGS-based thin-film solar cells and investigation on new materials for photovoltaic applications.

    OpenAIRE

    Rosa, Greta

    2018-01-01

    Currently, thin-film solar cells are one of the most promising technologies for low-cost renewable energy production. CdTe- and CuInGaSe2-based cells, which achieved record efficiencies of 22.1% and 22.6% respectively, are the most attractive among thin-film solar cells. These high efficiencies have had a huge influence in making them highly competitive in the photovoltaic market, with an estimated final cost per module lower than US $ 0.50 per peak-watt. At the Thin Film Laboratory of the...

  19. Switch-on fluorescent strategy based on crystal violet-functionalized CdTe quantum dots for detecting L-cysteine and glutathione in water and urine.

    Science.gov (United States)

    Sheng, Zhen; Chen, Ligang

    2017-10-01

    The concentration of L-cysteine (Cys) and glutathione (GSH) is closely related to the critical risk of various diseases. In our study, a new rapid method for the determination of Cys and GSH in water and urine samples has been developed using a fluorescent probe technique, which was based on crystal violet (CV)-functionalized CdTe quantum dots (QDs). The original QDs emitted fluorescence light, which was turned off upon adding CV. This conjugation of CV and QDs could be attributed to electrostatic interaction between COO - of mercaptopropionic acid (MPA) on the surface of QDs and N + of CV in aqueous solution. In addition, Förster resonance energy transfer (FRET) also occurred between CdTe QDs and CV. After adding Cys or GSH to the solution, Cys or GSH exhibited a stronger binding preference toward Cd 2+ than Cd 2+ -MPA, which disturbed the interaction between MPA and QDs. Thus, most MPA was able to be separated from the surface of QDs because of the participation of Cys or GSH. Then, the fluorescence intensity of the CdTe QDs was enhanced. Good linear relationships were obtained in the range of 0.02-40 μg mL -1 and 0.02-50 μg mL -1 , and the detection limits were calculated as 10.5 ng mL -1 and 8.2 ng mL -1 , for Cys and GSH, respectively. In addition, the concentrations of biological thiols in water and urine samples were determined by the standard addition method using Cys as the standard; the quantitative recoveries were in the range of 97.3-105.8%, and relative standard deviations (RSDs) ranged from 2.5 to 3.7%. The method had several unique properties, such as simplicity, lower cost, high sensitivity, and environmental acceptability. Graphical abstract Crystal violet-functionalized CdTe quantum dots for detecting L-cysteine and glutathione with switch-on fluorescent strategy.

  20. Comparison of three types of XPAD3.2/CdTe single chip hybrids for hard X-ray applications in material science and biomedical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Buton, C., E-mail: clement.buton@synchrotron-soleil.fr [Synchrotron SOLEIL, L´Orme des Merisiers, Saint-Aubin — BP 48 91192, Gif-sur-Yvette Cedex (France); Dawiec, A. [Synchrotron SOLEIL, L´Orme des Merisiers, Saint-Aubin — BP 48 91192, Gif-sur-Yvette Cedex (France); Graber-Bolis, J.; Arnaud, K. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Bérar, J.F.; Blanc, N.; Boudet, N. [Université Grenoble Alpes, Institut NÉEL, F-38042 Grenoble (France); CNRS, Institut NÉEL, F-38042 Grenoble (France); Clémens, J.C.; Debarbieux, F. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Delpierre, P.; Dinkespiler, B. [imXPAD SAS — Espace Mistral, Athélia IV, 297 avenue du Mistral, 13600 La Ciotat (France); Gastaldi, T. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Hustache, S. [Synchrotron SOLEIL, L´Orme des Merisiers, Saint-Aubin — BP 48 91192, Gif-sur-Yvette Cedex (France); Morel, C.; Pangaud, P. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Perez-Ponce, H. [imXPAD SAS — Espace Mistral, Athélia IV, 297 avenue du Mistral, 13600 La Ciotat (France); Vigeolas, E. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France)

    2014-09-11

    The CHIPSPECT consortium aims at building a large multi-modules CdTe based photon counting detector for hard X-ray applications. For this purpose, we tested nine XPAD3.2 single chip hybrids in various configurations (i.e. Ohmic vs. Schottky contacts or electrons vs. holes collection mode) in order to select the most performing and best suited configuration for our experimental requirements. Measurements have been done using both X-ray synchrotron beams and {sup 241}Am source. Preliminary results on the image quality, calibration, stability, homogeneity and linearity of the different types of detectors are presented.

  1. Properties of Hg1-xCdxTe epitaxial films grown on (211)CdTe and (211)CdZnTe

    International Nuclear Information System (INIS)

    Di Stefano, M.C.; Gilabert, U.; Heredia, E.; Trigubo, A.B.

    2004-01-01

    Hg 1-x Cd x Te (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd 0.96 Zn 0.04 Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure has been used for the epitaxial growth. Substrates and films were characterized by optical microscopy, chemical etching and X ray diffraction (Laue technique). The electrical properties were determined by Hall effect measurements. The characterization results allowed to evaluate the crystalline quality of MCT films. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Characterization of p-Type CdTe Electrodes in Acetonitrile/Electrolyte Solutions. Nearly Ideal Behavior from Reductive Surface Pretreatments.

    Science.gov (United States)

    1983-06-30

    using Ag conductive palnt and the entire assembly was mounted in glass tubing with ordinary epoxy leaving only the front crystal face, ...energy set, several eV higher than either Te2- or Teo (as measured for sputtered CdTe and Te, respectively) is assigned to TeO2 , the lowest stable...binding energy reported for TeO2 (575.9 eV). 33 The lower binding energy set of bands, lying midway between Teo and Te2 - , results from both Teo and

  3. Characterization of electroless Au, Pt and Pd contacts on CdTe and ZnTe by RBS and SIMS techniques

    Energy Technology Data Exchange (ETDEWEB)

    Roumie, M. E-mail: mroumie@cnrs.edu.lb; Hageali, M.; Zahraman, K.; Nsouli, B.; Younes, G

    2004-06-01

    Rutherford backscattering spectrometry (RBS) was applied to characterize Au, Pt and Pd contacts on II-VI semiconductor materials, CdTe and ZnTe, used as nuclear detectors. Electroless thin film depositions were prepared by changing the concentration of the reaction solution. Contrary to the deposition reaction time, it was observed that the amount of solution dilution degree had a considerable effect on increasing the thickness of the metal layer. Furthermore, PICTS electrical measurements confirmed the depth profile analysis performed by RBS and SIMS.

  4. Synthesis of cysteamine-coated CdTe quantum dots and its application in mercury (II) detection

    Energy Technology Data Exchange (ETDEWEB)

    Pei Jiying [State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Department of Chemistry, University of Science and Technology of China (USTC), Hefei 230026 (China); Zhu Hui; Wang Xiaolei [State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zhang Hanchang [Department of Chemistry, University of Science and Technology of China (USTC), Hefei 230026 (China); Yang Xiurong, E-mail: xryang@ciac.jl.cn [State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

    2012-12-13

    Highlights: Black-Right-Pointing-Pointer High-quality CA-CdTe QDs were synthesized with a kinetic-growth strategy. Black-Right-Pointing-Pointer The synthesis procedures were very simple. Black-Right-Pointing-Pointer The obtained QDs were used to detect Hg{sup 2+} without the interference of Cu{sup 2+}. - Abstract: High-quality cysteamine-coated CdTe quantum dots (CA-CdTe QDs) were successfully synthesized in aqueous phase by a facile one-pot method. Through hydroxylamine hydrochloride-promoted kinetic growth strategy, water-soluble CA-CdTe QDs could be obtained conveniently in a conical flask by a stepwise addition of raw materials. The photoluminescence quantum yield (PL QY) of the obtained QDs reached 9.2% at the emission peak of 520 nm. The optical property and the morphology of the QDs were characterized by UV-vis absorption spectra, photoluminescence spectra (PL) and transmission electron microscopy (TEM) respectively. Furthermore, the fluorescence of the resultant QDs was quenched by copper (II) (Cu{sup 2+}) and mercury (II) (Hg{sup 2+}) meanwhile. It is worthy of note that to separately detect Hg{sup 2+}, cyanide ion could be used to eliminate the interference of Cu{sup 2+}. Under the optimal conditions, the response was linearly proportional to the logarithm of Hg{sup 2+} concentration over the range of 0.08-3.33 {mu}M with a limit of detection (LOD) of 0.07 {mu}M.

  5. CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor

    International Nuclear Information System (INIS)

    Sedova, I. V.; Lyublinskaya, O. G.; Sorokin, S. V.; Sitnikova, A. A.; Toropov, A. A.; Donatini, F.; Dang, Si Le; Ivanov, S. V.

    2007-01-01

    A procedure for formation of CdSe quantum dots (QDs) in a ZnSe matrix is suggested. The procedure is based on the introduction of a CdTe submonolayer stressor deposited on the matrix surface just before deposition of the material of the QDs. (For CdTe/ZnSe structure, the relative lattice mismatch is Δa/a ∼ 14%.) The stressor forms small strained islands at the ZnSe surface, thus producing local fields of high elastic stresses controlling the process of the self-assembling of the QDs. According to the data of transmission electron microscopy, this procedure allows a considerable increase in the surface density of QDs, with a certain decrease in their lateral dimensions (down to 4.5 ± 1.5 nm). In the photoluminescence spectra, a noticeable (∼150 meV) shift of the peak to longer wavelengths from the position of the reference CdSe/ZnSe QD structure is observed. The shift is due to some transformation of the morphology of the QDs and an increase in the Cd content in the QDs. Comprehensive studies of the nanostructures by recording and analyzing the excitation spectra of photoluminescence, the time-resolved photoluminescence spectra, and the cathodoluminescence spectra show that the emission spectra involve two types of optical transitions, namely, the type-I transitions in the CdSeTe/ZnSe QDs and the type-II transitions caused mainly by the low cadmium content (Zn,Cd)(Se,Te)/ZnSe layer formed between the QDs

  6. Electronic stopping power of slow H{sup +} and He{sup 2+} ions in CdTe from first principle

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chang-kai [The Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875 (China); Beijing Radiation Center, Beijing 100875 (China); Mao, Fei [School of Nuclear Science and Technology, University of South China, Hengyang 421001 (China); Fu, Yan-long; Liao, Bin [The Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875 (China); Beijing Radiation Center, Beijing 100875 (China); Ouyang, Xiao-ping [Northwest Institute of Nuclear Technology, Xi’an 710024 (China); Zhang, Feng-Shou, E-mail: fszhang@bnu.edu.cn [The Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875 (China); Beijing Radiation Center, Beijing 100875 (China); Center of Theoretical Nuclear Physics, National Laboratory of Heavy Ion Accelerator of Lanzhou, Lanzhou 730000 (China)

    2017-02-01

    We study through time-dependent density-functional theory (TDDFT) method the electronic stopping power of low-energy protons and helium ions moving through CdTe under the condition of channeling. The agreement between our calculated results and SRIM data roughly up to the stopping maximum for the proton along the 〈1 0 0〉 and 〈1 1 1〉 crystalline axes and for helium ions along 〈1 0 0〉 crystalline axis is satisfactory, which can be explained by the energy transfer mechanism that electron–hole excitation caused by ions in the solid. However, in the channel of 〈1 1 1〉 for helium ions, a transition between two velocities regimes is observed at about v = 0.4 a.u. This may be an indication of extra energy loss channel beyond the electron–hole excitation. To analyze it, we calculate the amount of electrons captured by the moving projectiles in real time. It is found that the soft transition between two velocities regimes can be attributed to the charge transfer and charge resonance between helium ion and host atoms of CdTe crystal, which are considered as additional energy loss channels.

  7. Preparation of p-type NiO films by reactive sputtering and their application to CdTe solar cells

    Science.gov (United States)

    Ishikawa, Ryousuke; Furuya, Yasuaki; Araki, Ryouichi; Nomoto, Takahiro; Ogawa, Yohei; Hosono, Aikyo; Okamoto, Tamotsu; Tsuboi, Nozomu

    2016-02-01

    Transparent p-type NiO films were prepared by reactive sputtering using the facing-target system under Ar-diluted O2 gas at Tsub of 30 and 200 °C. The increasing intensity of dominant X-ray diffraction (XRD) peaks indicates improvements in the crystallinity of NiO films upon Cu doping. In spite of the crystallographic and optical changes after Cu-doping, the electrical properties of Cu-doped NiO films were slightly improved. Upon Ag-doping at 30 °C under low O2 concentration, on the other hand, the intensity of the dominant (111) XRD peaks was suppressed and p-type conductivity increased from ˜10-3 to ˜10-1 S cm-1. Finally, our Ag-doped NiO films were applied as the back contact of CdTe solar cells. CdTe solar cells with a glass/ITO/CdS/CdTe/NiO structure exhibited an efficiency of 6.4%, suggesting the high potential of using p-type NiO for the back-contact film in thin-film solar cells.

  8. Exploration of CdTe quantum dots as mesoscale pressure sensors via time-resolved shock-compression photoluminescent emission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Zhitao [Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia 30332-0826 (United States); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States); Banishev, Alexandr A.; Christensen, James; Dlott, Dana D. [School of Chemical Sciences and Fredrick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Lee, Gyuhyon; Scripka, David A.; Breidenich, Jennifer; Summers, Christopher J.; Thadhani, Naresh N., E-mail: naresh.thadhani@mse.gatech.edu [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States); Xiao, Pan [LNM, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States); Zhou, Min [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States)

    2016-07-28

    The nanometer size of CdTe quantum dots (QDs) and their unique optical properties, including size-tunable narrow photoluminescent emission, broad absorption, fast photoluminescence decay, and negligible light scattering, are ideal features for spectrally tagging the shock response of localized regions in highly heterogeneous materials such as particulate media. In this work, the time-resolved laser-excited photoluminescence response of QDs to shock-compression was investigated to explore their utilization as mesoscale sensors for pressure measurements and in situ diagnostics during shock loading experiments. Laser-driven shock-compression experiments with steady-state shock pressures ranging from 2.0 to 13 GPa were performed on nanocomposite films of CdTe QDs dispersed in a soft polyvinyl alcohol polymer matrix and in a hard inorganic sodium silicate glass matrix. Time-resolved photoluminescent emission spectroscopy was used to correlate photoluminescence changes with the history of shock pressure and the dynamics of the matrix material surrounding the QDs. The results revealed pressure-induced blueshifts in emitted wavelength, decreases in photoluminescent emission intensity, reductions in peak width, and matrix-dependent response times. Data obtained for these QD response characteristics serve as indicators for their use as possible time-resolved diagnostics of the dynamic shock-compression response of matrix materials in which such QDs are embedded as in situ sensors.

  9. Diodes based on semi-insulating CdTe crystals with Mo/MoO{sub x} contacts for X- and γ-ray detectors

    Energy Technology Data Exchange (ETDEWEB)

    Maslyanchuk, O.; Kulchynsky, V.; Solovan, M. [Chernivtsi National University, Chernivtsi (Ukraine); Gnatyuk, V. [Institute of Semiconductor Physics, NAS of Ukraine, Kyiv (Ukraine); Potiriadis, C. [Greek Atomic Energy Commission, Attiki (Greece); Kaissas, I. [Greek Atomic Energy Commission, Attiki (Greece); Department of Electrical and Computer Engineering, Aristotle University of Thessaloniki (Greece); Brus, V. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany)

    2017-03-15

    This paper reports on the possible applications of molybdenum oxide (Mo/MoO{sub x}) contacts in combination with semi-insulating CdTe crystals. The electrical contacts to p-type Cl-doped CdTe crystals were formed by the deposition of molybdenum oxide and pure molybdenum thin films by the DC reactive magnetron sputtering. Electrical properties of the prepared Mo-MoO{sub x}/p-CdTe/MoO{sub x}-Mo surface-barrier structures were investigated at different temperatures. It is shown that the rapid growth of the reverse current with increasing bias voltage higher than 10 V is caused by the space-charge limited currents. Spectrometric properties of the Mo-MoO{sub x}/p-CdTe/MoO{sub x}-Mo structures have been also analyzed. It is revealed that the developed heterojunction has shown promising characteristics for its practical application in X- and γ-ray radiation detector fabrication. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Kinetic barriers for Cd and Te adatoms on Cd and Te terminated CdTe (111) surface using ab initio simulations

    Science.gov (United States)

    Naderi, Ebadollah; Nanavati, Sachin P.; Majumder, Chiranjib; Ghaisas, S. V.

    2014-03-01

    In the present work we have calculated using density functional theory (DFT), diffusion barrier potentials on both the CdTe (111) surfaces, Cd terminated (A-type) & Te terminated (B-type). We employ nudge elastic band method (NEB) for obtaining the barrier potentials. The barrier is computed for Cd and for Te adatoms on both A-type and B-type surfaces. We report two energetically favourable positions along the normal to the surface, one above and other below the surface. The one above the surface has binding energy slightly more the one below. According to the results of this work, binding energy (in all cases) for adatoms are reasonable and close to experimental data. The barrier potential for hopping adatoms (Cd and Te) on both the surfaces is less than 0.35 eV. Apart from these most probable sites, there are other at least two sites on both the types of surfaces which are meta stable. We have also computed barriers for hopping to and from these meta stable positions. The present results can shade light on the defect formation mechanism in CdTe thin films during growth. The authors would like to thank C-DAC for the computing time on its PARAM series of supercomputers and DST Govt. of India, for partial funding.

  11. Ultrafast spin injection from Cd1-x Mn x Te magnetic barriers into a CdTe quantum well studied by pump-probe spectroscopy

    International Nuclear Information System (INIS)

    Aoshima, I.; Nishibayashi, K.; Souma, I.; Murayama, A.; Oka, Y.

    2006-01-01

    Spin injection from diluted magnetic semiconductor (DMS) barriers of Cd 1- x Mn x Te into a quantum well (QW) of CdTe is studied, by means of pump-probe absorption spectroscopy in magnetic fields. Fast decay characteristics of circularly polarized differential absorbances of spin-polarized excitons in the DMS barrier show the exciton injection time of 6 ps from the barriers into the QW. In accordance with the fast relaxation of the spin-polarized excitons from the barrier, we observe the rise of circular polarization degree for the differential absorption of the CdTe QW in magnetic fields, evidently indicating the spin injection. In addition, the circular polarization degree up to 0.3 is developed in the well immediately after pumping, originating from the fast relaxation of a heavy hole (hh) spin less than 0.2 ps, due to the giant Zeeman effect caused by the penetration of the hh wave function into the DMS barriers

  12. Life cycle assessment and energy pay-back time of advanced photovoltaic modules: CdTe and CIS compared to poly-Si

    International Nuclear Information System (INIS)

    Raugei, Marco; Bargigli, Silvia; Ulgiati, Sergio

    2007-01-01

    The paper is concerned with the results of a thorough energy and life cycle assessment (LIA) of CdTe and CIS photovoltaic modules. The analysis is based on actual production data, making it one of the very first of its kind to be presented to the scientific community, and therefore especially worthy of attention as a preliminary indication of the future environmental impact that the up-scaling of thin film module production may entail. The analysis is consistent with the recommendations provided by ISO norms 14040 and updates, and makes use of an in-house developed multi-method impact assessment method named SUMMA, which includes resource demand indicators, energy efficiency indicators, and 'downstream' environmental impact indicators. A comparative framework is also provided, wherein electricity produced by thin film systems such as the ones under study is set up against electricity from poly-Si systems and the average European electricity mix. Results clearly show an overall very promising picture for thin film technologies, which are found to be characterised by favourable environmental impact indicators (with special reference to CdTe systems), in spite of their still comparatively lower efficiencies

  13. Efficient n-type doping of CdTe epitaxial layers grown by photo-assisted molecular beam epitaxy with the use of chlorine

    Energy Technology Data Exchange (ETDEWEB)

    Hommel, D.; Scholl, S.; Kuhn, T.A.; Ossau, W.; Waag, A.; Landwehr, G. (Univ. Wuerzburg, Physikalisches Inst. (Germany)); Bilger, G. (Univ. Stuttgart, Inst. fuer Physikalische Elektronik (Germany))

    1993-01-30

    Chlorine has been used successfully for the first time for n-type doping of CdTe epitaxial layers (epilayers) grown by photo-assisted molecular beam epitaxy. Similar to n-type doping of ZnSe layers, ZnCl[sub 2] has been used as source material. The free-carrier concentration can be varied over more than three orders of magnitude by changing the ZnCl[sub 2] oven temperature. Peak mobilities are 4700 cm[sup 2] V[sup -1] s[sup -1] for an electron concentration of 2x10[sup 16] cm[sup -3] and 525 cm[sup 2] V[sup -1] s[sup -1] for 2x10[sup 18] cm[sup -3]. The electrical transport data obtained by Van der Pauw configuration and Hall structure measurements are consistent with each other, indicating a good uniformity of the epilayers. In photoluminescence the donor-bound-exciton emission dominates for all chlorine concentrations. This contasts significantly with results obtained for indium doping, commonly used for obtaining n-type CdTe epilayers. The superiority of chlorine over indium doping and the influence of growth parameters on the behaviour of CdTe:Cl layers will be discussed on the basis of transport, luminescence, secondary ion mass spectroscopy and X-ray photoelectron spectroscopy data. (orig.).

  14. Enhancement effect of CdTe quantum dots-IgG bioconjugates on chemiluminescence of luminol-H2O2 system

    International Nuclear Information System (INIS)

    Kanwal, Shamsa; Traore, Zoumana; Zhao Chunfang; Su Xingguang

    2010-01-01

    In this paper we developed an entirely new and highly sensitive luminol-H 2 O 2 flow injection chemiluminescence system using the enhancement effect of CdTe quantum dots-IgG bioconjugates. Immunoglobulin G (IgG) as a kind of bio-molecule was conjugated to different sized CdTe semiconductor quantum dots (QDs). Using PL spectra and CL intensity profiles, it was found that chemiluminescence resonance energy transfer (CRET) was possibly occurring between CdTe-IgG bioconjugate and luminol. Under optimum conditions, increase of IgG concentration in CdTe-IgG bioconjugate resulted enhancing effect on CL intensity of luminol-H 2 O 2 system. Moreover quenching effects on CL intensity by addition of different proteases can construct turn off biosensor for these proteases with low detection limits and wide linear range. Furthermore, the effects of various organic and inorganic species on CdTe-IgG bioconjugates enhanced luminol-H 2 O 2 CL system were also studied in this paper.

  15. Intensely emitting CdTe nanocrystals retained initial photoluminescence efficiency in sol-gel derived Si1-xZrxO2 glass

    International Nuclear Information System (INIS)

    Yang, P.; Murase, N.

    2007-01-01

    Emitting CdTe nanocrystals (NCs) were embedded in pure glass matrices (Si 1-x Zr x O 2 , x≤0.15) using a controlled sol-gel method, where the pre-hydrolyzed condition, the molar ratio of Zr/Si, the gelation time, the pH, and the amount of alcohol were judiciously optimized considering the surface condition of the NCs and the mechanism of the glass formation. As a result, the prepared glass phosphor exhibited high photoluminescence efficiencies (40% for green and 60% for red when Zr/Si was 5-10%) by retaining their initial values as in CdTe colloidal solution. To our knowledge, these values are the highest among those ever obtained for any solid matrices containing NCs. Because of the existence of Zr, the prepared glasses exhibit much better resistance against the ambient atmosphere, heat-treatment, and boiling water compared with pure silica glass (x=0) or the glass prepared from our other methods using a silane coupling agent. Thus, the obtained glass is promising for applications such as optical devices. (orig.)

  16. Design and fabrication of an aptasensor for chloramphenicol based on energy transfer of CdTe quantum dots to graphene oxide sheet.

    Science.gov (United States)

    Alibolandi, Mona; Hadizadeh, Farzin; Vajhedin, Fereshteh; Abnous, Khalil; Ramezani, Mohammad

    2015-03-01

    Detection and quantification of chloramphenicol have played essential roles in the effort to minimize food safety risk. Herein, a sophisticated "turn on" aptasensor based on aptamer-CdTe quantum dots (Apt-QDs) and graphene oxide (GO) was developed for chloramphenicol sensing. In this assay, the fluorescence of CdTe QDs-Apt was efficiently quenched through energy transfer from QDs-Apt to GO, and chloramphenicol was detected by recovering the quenched fluorescence due to specific binding between aptamer and chloramphenicol. The results indicated that the addition of a CdTe QDs-labeled aptamer to a GO solution (250μg/mL) led to a high quenching efficiency, yielding over 90% fluorescence quenching. Using a series of chloramphenicol concentrations (0.1 to 10nM) aptasensor provides a limit of detection and limit of quantification at 98pM and 987pM, respectively. Linearity of response over chloramphenicol was demonstrated (r>0.99). Furthermore, the GO-based aptasensor exhibited excellent selectivity toward chloramphenicol compared to other synthetic drugs with similar structures such as thiamphenicol, metronidazole and nitrofurantoin. Good reproducibility and precision (RSD 4.73%, n=10) of the assay indicates the ability of the aptasensor for routine quantitative trace analysis of chloramphenicol. Our results suggested that the prepared aptasensor was also well qualified for the detection of chloramphenicol in milk with a limit of detection of 0.2ppb. Copyright © 2014 Elsevier B.V. All rights reserved.

  17. CdTe and graphene co-sensitized TiO2 nanotube array photoanodes for protection of 304SS under visible light

    International Nuclear Information System (INIS)

    Li, Hong; Wang, Xiutong; Hou, Baorong; Zhang, Liang

    2015-01-01

    CdTe/graphene/TiO 2 films that served as photoanodes for cathodic protection application were prepared by an electrochemical deposition method. The deposition of graphene and CdTe nanoparticles (NPs) on the surface of the TiO 2 nanotubes was confirmed by scanning electron microscope and transmission electron microscopy. The composites exhibited high light absorption in both the UV and visible light region. The results indicated that TiO 2 nanotube photoelectrodes sensitized by 20-cycle graphene and 30-cycle CdTe NPs exhibited effective photocathodic protection properties for 304 stainless steel (304SS) under the visible-light illumination, with an photopotential of −750 mV versus saturated calomel electrode and a current density of 560 μA cm −2 . Due to the efficient photogenerated charge separation, the three-component CdTe/graphene/TiO 2 showed stronger photoresponse than pure TiO 2 under visible-light illumination. In summary, the CdTe/graphene could improve the photocathodic protection properties of TiO 2 films. (paper)

  18. Plasma kinetics and biodistribution of water-soluble CdTe quantum dots in mice: a comparison between Cd and Te

    International Nuclear Information System (INIS)

    Han Ying; Xie Guangyun; Sun Zhiwei; Mu Ying; Han Sihai; Xiao Yang; Liu Na; Wang Hui; Guo Caixia; Shi Zhixiong; Li Yanbo; Huang Peili

    2011-01-01

    Water-soluble quantum dots (QDs) have shown potential as tumor diagnostic agents. However, little is known about their biological behaviors in vivo. Male ICR mice were intravenously given a single dose (2.5 μmol kg −1 body weight) of water-soluble cadmium–telluride (CdTe) QDs (the QDs are approximately 4 nm in diameter and have maximal emission at 630 nm). Inductively coupled plasma mass spectrometry (ICP-MS) was used for measuring the kinetic action of 111 Cd and 125 Te for 7 days. The plasma kinetics of Cd and Te followed a two-compartment model, in which Cd exhibited greater apparent volume of distribution, greater clearance, faster distribution half-life, and significantly slower elimination half-life compared to Te. Contrary to its relatively transient fate in the plasma, high levels of Cd persisted in the liver and kidneys. Te accumulated primarily in the spleen. The different plasma kinetics and distribution patterns of Cd and Te imply that CdTe QDs have been part of the degradation or aggregation in vivo.

  19. Exploration of CdTe quantum dots as mesoscale pressure sensors via time-resolved shock-compression photoluminescent emission spectroscopy

    International Nuclear Information System (INIS)

    Kang, Zhitao; Banishev, Alexandr A.; Christensen, James; Dlott, Dana D.; Lee, Gyuhyon; Scripka, David A.; Breidenich, Jennifer; Summers, Christopher J.; Thadhani, Naresh N.; Xiao, Pan; Zhou, Min

    2016-01-01

    The nanometer size of CdTe quantum dots (QDs) and their unique optical properties, including size-tunable narrow photoluminescent emission, broad absorption, fast photoluminescence decay, and negligible light scattering, are ideal features for spectrally tagging the shock response of localized regions in highly heterogeneous materials such as particulate media. In this work, the time-resolved laser-excited photoluminescence response of QDs to shock-compression was investigated to explore their utilization as mesoscale sensors for pressure measurements and in situ diagnostics during shock loading experiments. Laser-driven shock-compression experiments with steady-state shock pressures ranging from 2.0 to 13 GPa were performed on nanocomposite films of CdTe QDs dispersed in a soft polyvinyl alcohol polymer matrix and in a hard inorganic sodium silicate glass matrix. Time-resolved photoluminescent emission spectroscopy was used to correlate photoluminescence changes with the history of shock pressure and the dynamics of the matrix material surrounding the QDs. The results revealed pressure-induced blueshifts in emitted wavelength, decreases in photoluminescent emission intensity, reductions in peak width, and matrix-dependent response times. Data obtained for these QD response characteristics serve as indicators for their use as possible time-resolved diagnostics of the dynamic shock-compression response of matrix materials in which such QDs are embedded as in situ sensors.

  20. Design of a hybrid gas proportional counter with CdTe guard counters for sup 1 sup 4 C dating system

    CERN Document Server

    Zhang, L; Hinamoto, N; Nakazawa, M; Yoshida, K

    2002-01-01

    Nowadays uniform, low-cost and large-size compound semiconductor detectors are available up to several square centimeters. We are trying to combine this technology with conventional gas detectors to upgrade an anticoincidence type proportional counter, Oeschger-type thin wall counter of 2.2 l, used for a sup 1 sup 4 C dating facility at the University of Tokyo. In order to increase the ratio of the signal to the background for smaller quantity of samples less than 1 g, an effective approach is to minimize the detector volume at higher gas pressure. However, the anticoincidence function suffers from such a small volume. Therefore we designed a new active wall gas counter of 0.13 l counting volume using CdTe compound semiconductor detectors as the wall of the gas proportional counter to perform anticoincidence. Simulation study showed that at noise thresholds less than 70 keV, the wall counters can reject above 99.8% of events arising from outer gamma rays. Measured noise levels of CdTe detectors were smaller t...

  1. MPA-capped CdTe quantum dots exposure causes neurotoxic effects in nematode Caenorhabditis elegans by affecting the transporters and receptors of glutamate, serotonin and dopamine at the genetic level, or by increasing ROS, or both

    Science.gov (United States)

    Wu, Tianshu; He, Keyu; Zhan, Qinglin; Ang, Shengjun; Ying, Jiali; Zhang, Shihan; Zhang, Ting; Xue, Yuying; Tang, Meng

    2015-12-01

    As quantum dots (QDs) are widely used in biomedical applications, the number of studies focusing on their biological properties is increasing. While several studies have attempted to evaluate the toxicity of QDs towards neural cells, the in vivo toxic effects on the nervous system and the molecular mechanisms are unclear. The aim of the present study was to investigate the neurotoxic effects and the underlying mechanisms of water-soluble cadmium telluride (CdTe) QDs capped with 3-mercaptopropionic acid (MPA) in Caenorhabditis elegans (C. elegans). Our results showed that exposure to MPA-capped CdTe QDs induced behavioral defects, including alterations to body bending, head thrashing, pharyngeal pumping and defecation intervals, as well as impaired learning and memory behavior plasticity, based on chemotaxis or thermotaxis, in a dose-, time- and size-dependent manner. Further investigations suggested that MPA-capped CdTe QDs exposure inhibited the transporters and receptors of glutamate, serotonin and dopamine in C. elegans at the genetic level within 24 h, while opposite results were observed after 72 h. Additionally, excessive reactive oxygen species (ROS) generation was observed in the CdTe QD-treated worms, which confirmed the common nanotoxicity mechanism of oxidative stress damage, and might overcome the increased gene expression of neurotransmitter transporters and receptors in C. elegans induced by long-term QD exposure, resulting in more severe behavioral impairments.

  2. FY 1999 research and development of technologies for commercialization of photovoltaic power generation systems. Development of technologies for production of thin-film solar cells and low-cost, large-area modules (Development of technologies for high-reliability CdTe solar cell modules); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu (koshinraisei CdTe taiyo denchi module no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The research and development project is implemented for production of low-cost, large-area modules of CdTe solar cells by the high-quality film-making process and high-function patterning, and the FY 1999 results are reported. The research program for the large-area TCO film-making technologies involves investigations on improvement of SnO{sub 2} film quality by the mist method and continuous film-making, which lead to continuous, stable production of 34 substrates of low resistance of 9.7{omega} on the average. The program for production of the large-area, thin-film CdS/CdTe solar cells involves production of TCO and CdS by the mist method, and patterning of the laminated TCO/CdS film by laser scribing. The CdTe film is formed by the atmospheric pressure CSS method, and treated with CdCl{sub 2} to improve its crystallinity. The CdTe film is patterned by sand blasting, and provided with the carbon and silver electrodes by screen printing, to complete the cell. The process is totally effected at the atmospheric pressure, needing no vacuum device. The CdTe solar cell assembly (130 cells connected in series, opening area: 5,413cm{sup 2}), fabricated on a trial basis, achieves a conversion efficiency of 10%. (NEDO)

  3. Probing the interaction of a new synthesized CdTe quantum dots with human serum albumin and bovine serum albumin by spectroscopic methods

    Energy Technology Data Exchange (ETDEWEB)

    Bardajee, Ghasem Rezanejade, E-mail: rezanejad@pnu.ac.ir; Hooshyar, Zari

    2016-05-01

    A novel CdTe quantum dots (QDs) were prepared in aqueous phase via a facile method. At first, poly (acrylic amide) grafted onto sodium alginate (PAAm-g-SA) were successfully synthesized and then TGA capped CdTe QDs (CdTe-TGA QDs) were embed into it. The prepared CdTe-PAAm-g-SA QDs were optimized and characterized by transmission electron microscopy (TEM), thermo-gravimetric (TG) analysis, Fourier transform infrared (FT-IR), UV–vis and fluorescence spectroscopy. The characterization results indicated that CdTe-TGA QDs, with particles size of 2.90 nm, were uniformly dispersed on the chains of PAAm-g-SA biopolymer. CdTe-PAAm-g-SA QDs also exhibited excellent UV–vis absorption and high fluorescence intensity. To explore biological behavior of CdTe-PAAm-g-SA QDs, the interactions between CdTe-PAAm-g-SA QDs and human serum albumin (HSA) (or bovine serum albumin (BSA)) were investigated by cyclic voltammetry, FT-IR, UV–vis, and fluorescence spectroscopic. The results confirmed the formation of CdTe-PAAm-g-SA QDs-HSA (or BSA) complex with high binding affinities. The thermodynamic parameters (ΔG < 0, ΔH < 0 and ΔS < 0) were indicated that binding reaction was spontaneous and van der Waals interactions and hydrogen-bond interactions played a major role in stabilizing the CdTe-PAAm-g-SA QDs-HSA (or BSA) complexes. The binding distance between CdTe-PAAm-g-SA QDs and HSA (or BSA)) was calculated about 1.37 nm and 1.27 nm, respectively, according to Forster non-radiative energy transfer theory (FRET). Analyzing FT-IR spectra showed that the formation of QDs-HSA and QDs-BSA complexes led to conformational changes of the HSA and BSA proteins. All these experimental results clarified the effective transportation and elimination of CdTe-PAAm-g-SA QDs in the body by binding to HSA and BSA, which could be a useful guideline for the estimation of QDs as a drug carrier. - Highlights: • The CdTe quantum dots coated with polyacrylamide grafted onto sodium alginate. • The

  4. Physical Properties of P.V.C. Attenuated Network Copolymers Produced by Ionizing Radiation; Proprietes physiques des copolymeres obtenus sous l'action de rayonnements ionisants et dont le reseau est attenue par l'effet du chlorure de polyvinyle; Fizicheskie svojstva polivinilkhloridnykh obednennykh tsepej sopolimerov, poluchennykh v rezul'tate vozdejstviya ioniziruyushchej radiatsii; Propiedades fisicas de los copolimeros de redes atenuadas por cloruro de polivinilo obtenidos por irradiacion

    Energy Technology Data Exchange (ETDEWEB)

    Pinner, S H [Tube Investments Research Laboratories, Hinxton Hall, Cambridge (United Kingdom)

    1960-07-15

    perekrestnykh svyazej v polivinilkhloride s pomoshch'yu ioniziruyushchej radiatsii stavit osobye problemy. V svyazi s neblagopriyatnym obrazovaniem poperechnykh svyazej i parametrami razrusheniya svyazej dlya dannogo polimera dozy radiatsii, neobkhodimye dlya obrazovaniya prochnykh tsoperechnykh plotnostej soedinenij, yavlyayutsya slishkom bol'shimi i parallel'no s ehtim proiskhodit protsess obestsvechivaniya i degidrogalogenirovaniya. EHti trudnosti udalos' preodolet' putem vvedeniya diallilovykh i triallilovykh ehfirov v polivinilkhlorid eshche do oblucheniya. Takim obrazom udalos' poluchit' produkty s prochnymi poperechnymi svyazyami pri otnositel'no malykh dozakh ioniziruyushchej radiatsii. Proverka fizicheskikh svojstv dannykh produktov pokazyvaet, chto oni yavlyayutsya ne prostymi graft-sopolimerami, chto obychno svyazano s prisutstviem dlinnykh razvetvlennykh tsepej, a obednennymi allilovymi polimernymi svyazyami. V ehtikh materialakh sochetayutsya svojstva iskhodnogo polimera i allilovoj svyazi. V doklade govoritsya o prochnosti na razryv, module i rastyazhenii oslablennoj svyazi sopolimerov, kotorye rassmatrivayutsya v zavisimosti ot temperatury, kontsentratsii i roli allilovogo ehfira. Takzhe privodyatsya zamechaniya po stojkosti poluchennykh produktov k razbukhaniyu i k khimicheskomu vozdejstviyu. (author)

  5. Effect of the grain sizes on the photovoltaic parameters of CdTe solar cells prepared by close space sublimation method

    International Nuclear Information System (INIS)

    Potlog, T.

    2007-01-01

    Thin Film CdS/CdTe solar cells were fabricated by Close Space Sublimation at the substrate temperature ranging from 300 degrees ± 5 degrees to 340 degrees ± degrees. The best photovoltaic parameters were achieved at substrate temperature 320 degrees and source temperature 610 degrees. The open circuit voltage and current density changes significantly with the substrate temperature and depends on the dimension of the grain sizes. Grain size is an efficiency limiting parameter for CdTe layers with large grains. The open circuit voltage and current density are the best for the cells having dimension of grains between 1.0 μm and ∼ 5.0 μm. CdS/CdTe solar cells with an efficiency of ∼ 10% were obtained. (author)

  6. Stability issues of high-energy resolution diode type CdTe nuclear radiation detectors in a long-term operation

    CERN Document Server

    Niraula, M; Aoki, T; Tomita, Y; Hatanaka, Y

    2002-01-01

    High-energy resolution diode type CdTe detectors were fabricated by growing an n-type epitaxial layer on high resistivity p-like crystal wafers, and their stability issues during a long-term operation were studied. Room temperature stability of the detectors was not good at low operating biases of around 200 V. However, it could be improved significantly by operating them at higher biases under full depletion conditions. On the other hand, detectors exhibited excellent stability by cooling them slightly below room temperature down to 0 deg. C. The effect of this low level of cooling on detector stability was found to be more significant than that of applying high biases at room temperature. By using the detector type presented here, stable operation could be obtained at moderate operating voltages of around 400 V and with a modest degree of cooling.

  7. Microwave studies on the dielectric properties of Sm3+ and Sm3+/CdTe doped sol-gel silica glasses

    International Nuclear Information System (INIS)

    Mathew, Siby; Rejikumar, P.R.; Yohannan, Jaimon; Mathew, K.T.; Unnikrishnan, N.V.

    2008-01-01

    Complex permittivity and conductivity studies of Samarium and Samarium/semiconductor cadmium telluride sol-gel silica glass samples were done. We use cavity perturbation technique at S band frequencies using TE 10p Mode. Structural evolution of the matrix on annealing is discussed based on FTIR analysis/XRD power diffraction. In cavity perturbation technique dielectric parameters like complex permittivity and conductivity are determined by measuring changes in resonant frequency due to small perturbation inside the cavity produced by the introduction of the samples. The addition of the semiconductor along with the samarium was found to lower the permittivity, loss factor and conductivity. Variations of permittivity values with annealing temperature find applications in IC Technology, optic fibre communication, etc. The Sm 3+ /CdTe doped glasses can also be used in the fabrication of new and improved materials for microwave electronic circuits and in electromagnetic shielding devices

  8. Alternative collimator for CdTe (model XR-100T), when it is used for a direct measurements of radiodiagnostic spectra

    International Nuclear Information System (INIS)

    Soares, C.; Guevara, M.V. Manso; Milian, F. Mas; Garcia, F.

    2014-01-01

    The spectrum simulation is a powerful instrument of great practical and pedagogical usefulness, because it helps to understand the technical and the instrumental limits of parameters in optimized measurements of magnitudes of interest in physics. Monte Carlo models, based on particle and radiation transport, provide easy and flexible tools for simulating complex geometries and materials. Particularly, MCNPX code is used to compare, manipulate, and quantify simulated and measured spectra. The purpose of this work is to use this tool set to estimate the characteristics of a collimation device, avoiding permanent and temporary damages into the diode-pin detector, during direct measurements of the Bremsstrahlung's spectrum, which was generated from diagnosis tubes with medical purpose. The simulations were made with a maximum voltage of 150 kVp, and typical charges used in radiological protocols in the medical area. Also, differential high pulse spectra, simulated and measured with a CdTe Detector, are reported. (author)

  9. Influence of CdTe sub-monolayer stressor on CdSe quantum dot self-assembling in ZnSe

    International Nuclear Information System (INIS)

    Sedova, I.V.; Lyublinskaya, O.G.; Sorokin, S.V.; Sitnikova, A.A.; Solnyshkov, D.D.; Rykhova, O.V.; Toropov, A.A.; Ivanov, S.V.

    2006-01-01

    This paper reports on the attempt to apply the stressor-controlled quantum dot (QD) fabrication technique to the conventional CdSe/ZnSe nanostructures. Super-strained CdTe fractional monolayer (Δa/a∝14% for CdTe/ZnSe) grown on top of the Te-stabilized ZnSe surface prior to deposition of the QD material (CdSe) has been used as a stressor which is expected to affect size, composition and density of CdSe QDs. The grown structures are studied by X-ray diffraction, transmission-electron microscopy, photoluminescence (PL) and PL excitation in comparison with conventional CdSe/ZnSe QDs obtained by a modified migration enhanced epitaxy technique. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. MOCVD growth of CdTe and HgTe on GaAs in a vertical, high-speed, rotating-disc reactor

    International Nuclear Information System (INIS)

    Tompa, G.S.; Nelson, C.R.; Reinert, P.D.; Saracino, M.A.; Terrill, L.A.; Colter, P.C.

    1989-01-01

    The metalorganic chemical vapor deposition (MOCVD) growth of CdTe and HgTe on GaAs (111) and (100) substrates in a vertical, high-speed, rotating-disc reactor was investigated. A range of total reactor pressure, carrier gas flow rate, chemical concentrations, deposition temperature, and rotation rate have been investigated in an attempt to optimize growth conditions. Diisopropyltelluride (DIPTe) and Dimethylcadmium (DMCd) were used as growth precursors. Thickness uniformity varies less than +/- 1.5% over 50 mm diameter wafers. Films having FWHM X-ray rocking curves less than 90 arcsec were obtained on GaAs (111) substrates. The films have excellent surface morpho