suspended si3n4 beams: Topics by WorldWideScience.org

Sample records for suspended si3n4 beams

Germanium growth on electron beam lithography patterned Si3N4/Si(001) substrate using molecular beam epitaxy

Science.gov (United States)

Sarkar, Subhendu Sinha; Katiyar, Ajit K.; Sarkar, Arijit; Dhar, Achintya; Rudra, Arun; Khatri, Ravinder K.; Ray, Samit Kumar

2018-04-01

It is important to investigate the growth dynamics of Ge adatoms under different surface stress regimes of the patterned dielectric to control the selective growth of self-assembled Ge nanostructures on silicon. In the present work, we have studied the growth of Ge by molecular beam epitaxy on nanometer scale patterned Si3N4/Si(001) substrates generated using electron beam lithography. The pitch of the patterns has been varied to investigate its effect on the growth of Ge in comparison to un-patterned Si3N4. For the patterned Si3N4 film, Ge did not desorbed completely from the Si3N4 film and hence no site selective growth pattern is observed. Instead, depending upon the pitch, Ge growth has occurred in different growth modes around the openings in the Si3N4. For the un-patterned substrate, the morphology exhibits the occurrence of uniform 3D clustering of Ge adatoms on Si3N4 film. This variation in the growth modes of Ge is attributed to the variation of residual stress in the Si3N4 film for different pitch of holes, which has been confirmed theoretically through Comsol Multiphysics simulation. The variation in stress for different pitches resulted in modulation of surface energy of the Si3N4 film leading to the different growth modes of Ge.
Investigation based on nano-electromechanical system double Si3N4 resonant beam pressure sensor.

Science.gov (United States)

Yang, Chuan; Guo, Can; Yuan, Xiaowei

2011-12-01

This paper presents a type of NEMS (Nano-Electromechanical System) double Si3N4 resonant beams pressure sensor. The mathematical models are established in allusion to the Si3N4 resonant beams and pressure sensitive diaphragm. The distribution state of stress has been analyzed theoretically based on the mathematical model of pressure sensitive diaphragm; from the analysis result, the position of the Si3N4 resonant beams above the pressure sensitive diaphragm was optimized and then the dominance observed after the double resonant beams are adopted is illustrated. From the analysis result, the position of the Si3N4 resonant beams above the pressure sensitive diaphragm is optimized, illustrating advantages in the adoption of double resonant beams. The capability of the optimized sensor was generally analyzed using the ANSYS software of finite element analysis. The range of measured pressure is 0-400 Kpa, the coefficient of linearity correlation is 0.99346, and the sensitivity of the sensor is 498.24 Hz/Kpa, higher than the traditional sensors. Finally the processing techniques of the sensor chip have been designed with sample being successfully processed.
Pressureless sintering of dense Si3N4 and Si3N4/SiC composites with nitrate additives

International Nuclear Information System (INIS)

Kim, J.Y.; Iseki, Takayoshi; Yano, Toyohiko

1996-01-01

The effect of aluminum and yttrium nitrate additives on the densification of monolithic Si 3 N 4 and a Si 3 N 4 /SiC composite by pressureless sintering was compared with that of oxide additives. The surfaces of Si 3 N 4 particles milled with aluminum and yttrium nitrates, which were added as methanol solutions, were coated with a different layer containing Al and Y from that of Si 3 N 4 particles milled with oxide additives. Monolithic Si 3 N 4 could be sintered to 94% of theoretical density (TD) at 1,500 C with nitrate additives. The sintering temperature was about 100 C lower than the case with oxide additives. After pressureless sintering at 1,750 C for 2 h in N 2 , the bulk density of a Si 3 N 4 /20 wt% SiC composite reached 95% TD with nitrate additives
The effect of Si content on the fracture toughness of CrAlN/Si3N4 coatings

International Nuclear Information System (INIS)

Liu, S.; Wheeler, J. M.; Davis, C. E.; Clegg, W. J.; Zeng, X. T.

2016-01-01

CrAlN/Si 3 N 4 nanocomposite coatings with different Si contents were deposited to understand how Si influences the microstructure and mechanical behaviour of the coatings, in particular, the fracture toughness. The coating composition, chemical bonding, microstructure, and mechanical properties were studied by energy dispersive spectroscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and nanoindentation, respectively. Using a micro double cantilever beam sample, it was found that the fracture toughness of CrAlN/Si 3 N 4 coatings was higher than that of both the CrN and CrAlN coatings and increased with increasing Si content. Cross-sectional transmission electron microscopy suggested that this was caused by the suppression of cracking at columnar boundaries
Fluorocarbon based atomic layer etching of Si_3N_4 and etching selectivity of SiO_2 over Si_3N_4

International Nuclear Information System (INIS)

Li, Chen; Metzler, Dominik; Oehrlein, Gottlieb S.; Lai, Chiukin Steven; Hudson, Eric A.

2016-01-01

Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO_2 ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar"+ ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO_2 from the surface. In the present article, the authors describe controlled etching of Si_3N_4 and SiO_2 layers of one to several Angstroms using this cyclic ALE approach. Si_3N_4 etching and etching selectivity of SiO_2 over Si_3N_4 were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si_3N_4 were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si_3N_4 has a lower physical sputtering energy threshold than SiO_2, Si_3N_4 physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si_3N_4 to SiO_2 ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO_2 to Si_3N_4 etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si_3N_4 surfaces. This highly selective etching is explained by a lower carbon consumption of Si_3N_4 as compared to SiO_2. The comparison of C_4F_8 and CHF_3 only showed a difference in etching selectivity for FC depleted conditions. For FC accumulation conditions
The effect of Si content on the fracture toughness of CrAlN/Si{sub 3}N{sub 4} coatings

Energy Technology Data Exchange (ETDEWEB)

Liu, S. [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075 (Singapore); Gordon Laboratory, Department of Materials Science and Metallurgy, 27 Charles Babbage Rd., Cambridge CB3 0FS (United Kingdom); Wheeler, J. M. [Laboratory for Nanometallurgy, ETH Zürich, Vladimir-Prelog-Weg 5, 8093 Zurich (Switzerland); Davis, C. E.; Clegg, W. J. [Gordon Laboratory, Department of Materials Science and Metallurgy, 27 Charles Babbage Rd., Cambridge CB3 0FS (United Kingdom); Zeng, X. T. [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075 (Singapore)

2016-01-14

CrAlN/Si{sub 3}N{sub 4} nanocomposite coatings with different Si contents were deposited to understand how Si influences the microstructure and mechanical behaviour of the coatings, in particular, the fracture toughness. The coating composition, chemical bonding, microstructure, and mechanical properties were studied by energy dispersive spectroscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and nanoindentation, respectively. Using a micro double cantilever beam sample, it was found that the fracture toughness of CrAlN/Si{sub 3}N{sub 4} coatings was higher than that of both the CrN and CrAlN coatings and increased with increasing Si content. Cross-sectional transmission electron microscopy suggested that this was caused by the suppression of cracking at columnar boundaries.
On a two-layer Si_3N_4/SiO_2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

International Nuclear Information System (INIS)

Arutyunyan, S. S.; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V.

2016-01-01

The fabrication of a two-layer Si_3N_4/SiO_2 dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si_3N_4/SiO_2 mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.
Suspended HfO2 photonic crystal slab on III-nitride/Si platform

International Nuclear Information System (INIS)

Wang, Yongjin; Feng, Jiao; Cao, Ziping; Zhu, Hongbo

2014-01-01

We present here the fabrication of suspended hafnium oxide (HfO 2 ) photonic crystal slab on a III-nitride/Si platform. The calculations are performed to model the suspended HfO 2 photonic crystal slab. Aluminum nitride (AlN) film is employed as the sacrificial layer to form air gap. Photonic crystal patterns are defined by electron beam lithography and transferred into HfO 2 film, and suspended HfO 2 photonic crystal slab is achieved on a III-nitride/Si platform through wet-etching of AlN layer in the alkaline solution. The method is promising for the fabrication of suspended HfO 2 nanostructures incorporating into a III-nitride/Si platform, or acting as the template for epitaxial growth of III-nitride materials. (orig.)
Interfacial microstructure of Si{sub 3}N{sub 4}/Si{sub 3}N{sub 4} brazing joint with Cu-Zn-Ti filler alloy

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Zhang, J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)], E-mail: hitzhangjie@hit.edu.cn; Zhang, X.M.; Zhou, Y. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Naka, M. [Joining and Welding Research Institute, Osaka University, Ibaraki, Osaka 567-0047 (Japan); Svetlana, Atroshenko [Faculty of Mathematics and Mechanics, Saint-Petersburg State University (Russian Federation)

2008-11-15

In this study, Si{sub 3}N{sub 4} ceramic was jointed by a brazing technique with a Cu-Zn-Ti filler alloy. The interfacial microstructure between Si{sub 3}N{sub 4} ceramic and filler alloy in the Si{sub 3}N{sub 4}/Si{sub 3}N{sub 4} joint was observed and analyzed by using electron-probe microanalysis, X-ray diffraction and transmission electron microscopy. The results indicate that there are two reaction layers at the ceramic/filler interface in the joint, which was obtained by brazing at a temperature and holding time of 1223 K and 15 min, respectively. The layer nearby the Si{sub 3}N{sub 4} ceramic is a TiN layer with an average grain size of 100 nm, and the layer nearby the filler alloy is a Ti{sub 5}Si{sub 3}N{sub x} layer with an average grain size of 1-2 {mu}m. Thickness of the TiN and Ti{sub 5}Si{sub 3}N{sub x} layers is about 1 {mu}m and 10 {mu}m, respectively. The formation mechanism of the reaction layers was discussed. A model showing the microstructure from Si{sub 3}N{sub 4} ceramic to filler alloy in the Si{sub 3}N{sub 4}/Si{sub 3}N{sub 4} joint was provided as: Si{sub 3}N{sub 4} ceramic/TiN reaction layer/Ti{sub 5}Si{sub 3}N{sub x} reaction layer/Cu-Zn solution.
Microstructure and Properties of Porous Si3N4/Dense Si3N4 Joints Bonded Using RE–Si–Al–O–N (RE = Y or Yb Glasses

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Ling Li

2017-11-01

Full Text Available The joining of porous Si3N4 to dense Si3N4 ceramics has been successfully performed using mixed RE2O3 (RE = Y or Yb, Al2O3, SiO2, and α-Si3N4 powders. The results suggested that the α-Si3N4 powders partly transformed into β-SiAlON and partly dissolved into oxide glass to form oxynitride glass. Thus, composites of glass/β-SiAlON-ceramic formed in the seam of joints. Due to the capillary action of the porous Si3N4 ceramic, the molten glass solder infiltrated into the porous Si3N4 ceramic side during the joining process and formed the “infiltration zone” with a thickness of about 400 μm, which contributed to the heterogeneous distribution of the RE–Si–Al–O–N glasses in the porous Si3N4 substrate. In-situ formation of β-SiAlON in the seam resulted in a high bonding strength. The maximum bending strength of 103 MPa and 88 MPa was reached for the porous Si3N4/dense Si3N4 joints using Y–Si–Al–O–N and Yb–Si–Al–O–N glass solders, respectively.
On a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

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Arutyunyan, S. S., E-mail: spartakmain@gmail.com; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)

2016-08-15

The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si{sub 3}N{sub 4}/SiO{sub 2} mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.
Sintering behaviour and phase relationships of Si[sub 3]N[sub 4] ceramics in the Si[sub 3]N[sub 4]-SiO[sub 2]-MgO-Y[sub 2]O[sub 3] system. Sinterverhalten und Phasenbeziehungen von Si[sub 3]N[sub 4]-Keramiken im System Si[sub 3]N[sub 4]-SiO[sub 2]-MgO-Y[sub 2]O[sub 3

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Mahoney, F.M.

1992-10-12

The aim of this work is the investigation of the sintering or crystallisation behaviour of Si[sub 3]N[sub 4] ceramics depending on the additive composition in the Si[sub 3]N[sub 4]-SiO[sub 2]-MgO-Y[sub 2]O[sub 3] system. With regard to the complicated manufacturing process of sintered and heat-treated Si[sub 3]N[sub 4] ceramics, one should first determine which additive compositions make complete compression possible. The effect of the composition on the volume and the viscosity of the melting phase should be cleared up, where determining the Si[sub 3]N[sub 4] solubility relative to the additive composition is of special importance. The phase relationships between Si[sub 3]N[sub 4] and the possible crystalline secondary phases should be determined for the crystallisation behaviour. Due to the very fine distribution of only a 5-15% proportion of additive in conventional Si[sub 3]N[sub 4] samples, a characterisation of the secondary phases is difficult to carry out with X-ray or REM/EDX analysis. Therefore, experiments with oxy-nitridic model samples were carried out in this work, which have the same phase relationships as conventional Si[sub 3]N[sub 4] compositions, but with an appreciably higher proportion of additive. The possibility of transferring the results of the model samples were tested on examples of three Si[sub 3]N[sub 4] ceramics. (orig.)
Fluorocarbon based atomic layer etching of Si{sub 3}N{sub 4} and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Li, Chen [Department of Physics, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu [Department of Materials Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Lai, Chiukin Steven; Hudson, Eric A. [Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538 (United States)

2016-07-15

Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO{sub 2} ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar{sup +} ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO{sub 2} from the surface. In the present article, the authors describe controlled etching of Si{sub 3}N{sub 4} and SiO{sub 2} layers of one to several Angstroms using this cyclic ALE approach. Si{sub 3}N{sub 4} etching and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4} were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si{sub 3}N{sub 4} were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si{sub 3}N{sub 4} has a lower physical sputtering energy threshold than SiO{sub 2}, Si{sub 3}N{sub 4} physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si{sub 3}N{sub 4} to SiO{sub 2} ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO{sub 2} to Si{sub 3}N{sub 4} etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si{sub 3}N{sub 4} surfaces. This highly selective etching is explained by a lower carbon consumption of Si{sub 3}N{sub 4} as compared to Si
Ion Beam Analysis, structure and corrosion studies of nc-TiN/a-Si{sub 3}N{sub 4} nanocomposite coatings deposited by sputtering on AISI 316L

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García, J. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Canto, C.E. [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, México, D.F. 04510 (Mexico); Flores, M. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Andrade, E., E-mail: andrade@fisica.unam.mx [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, México, D.F. 04510 (Mexico); Rodríguez, E.; Jiménez, O. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Solis, C.; Lucio, O.G. de [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, México, D.F. 04510 (Mexico); Rocha, M.F. [ESIME-Z, Instituto Politécnico Nacional, ALM Zacatenco, México, D.F. 07738 (Mexico)

2014-07-15

In this work, nanocomposite coatings of nc-TiN/a-Si{sub 3}N{sub 4}, were deposited on AISI 316L stainless steel substrate by a DC and RF reactive magnetron co-sputtering technique using an Ar–N{sub 2} plasma. The structure of the coatings was characterized by means of XRD (X-ray Diffraction). The substrate and coating corrosion resistance were evaluated by potentiodynamic polarization using a Ringer solution as electrolyte. Corrosion tests were conducted with the purpose to evaluate the potential of this coating to be used on biomedical alloys. IBA (Ion Beam Analysis) techniques were applied to measure the elemental composition profiles of the films and, XPS (X-ray Photoelectron Spectroscopy) were used as a complementary technique to obtain information about the compounds present in the films. The nanocomposite coatings of nc-TiN/a-Si{sub 3}N{sub 4} show crystalline (TiN) and amorphous (Si{sub 3}N{sub 4}) phases which confer a better protection against the corrosion effects compared with that of the AISI 316L.
Influence of Si ion implantation on structure and morphology of g-C{sub 3}N{sub 4}

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Varalakshmi, B.; Sreenivasulu, K.V. [School of Engineering Sciences and Technology (SEST), University of Hyderabad, Hyderabad 500046 (India); Asokan, K. [Inter University Accelerator Centre (IUAC), Aruna Asaf Ali Marg, Near Vasant Kunj, New Delhi 110067 (India); Srikanth, V.V.S.S., E-mail: vvsssse@uohyd.ernet.in [School of Engineering Sciences and Technology (SEST), University of Hyderabad, Hyderabad 500046 (India)

2016-07-15

Effect of Si ion implantation on structural and morphological features of graphite-like carbon nitride (g-C{sub 3}N{sub 4}) was investigated. g-C{sub 3}N{sub 4} was prepared by using a simple atmospheric thermal decomposition process. The g-C{sub 3}N{sub 4} pellets were irradiated with a Si ion beam of energy 200 keV with different fluencies. Structural, morphological and elemental, and phase analysis of the implanted samples in comparison with the pristine samples was carried out by using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) with energy dispersive spectroscopy (EDS) and Fourier transform infrared spectroscopy (FTIR) techniques, respectively. The observations revealed that Si ion implantation results in a negligible change in the crystallite size and alteration of the network-like to the sheet-like morphology of g-C{sub 3}N{sub 4} and Si ions in the g-C{sub 3}N{sub 4} network.
Integrated mechano-optical hydrogen gas sensor using cantilever bending readout with a Si3N4 grated waveguide.

NARCIS (Netherlands)

Pham Van So, P.V.S.; Dijkstra, Mindert; van Wolferen, Hendricus A.G.M.; Pollnau, Markus; Krijnen, Gijsbertus J.M.; Hoekstra, Hugo

We demonstrate a proof of concept of a novel and compact integrated mechano-optical sensor for H2 detection based on a microcantilever suspended above a Si3N4 grated waveguide. The fabricated devices are mechanically and optically modeled and characterized. Sensing operation of the sensor is
Design and Development of an Array of Dielectric Suspended Membranes for Microhotplate Applications

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Mahanth Prasad

2014-05-01

Full Text Available The paper presents the design, fabrication and characterization of an array of suspended dielectric suspended membranes for microhotplate applications. A single cell membrane (100 µm ´ 100 µm made of two different dielectric layers: SiO2 and Si3N4 separately, was designed and simulated using ANSYS 10.0. The simulation of stress generated in different dielectric membranes as a function of temperature is reported. The thickness of both layers was taken as 0.3 µm. The membranes of both SiO2 and Si3N4 dielectrics were fabricated on silicon substrate by bulk micromachining technique using TMAH solution. The buckling of the beam and breakage of membranes made of high-stress Si3N4 film are reported. The simulated results were verified by experiments. The membrane made of SiO2 layer was found to be more suitable in comparison to high-stress Si3N4 layer for microhotplate applications. The present approach provides high yield at low cost for fabrication of microhotplates for gas sensing applications.
Non-condensed (oxo)nitridosilicates: La{sub 3}-[SiN{sub 4}]F and the polymorph o-La{sub 3}-[SiN{sub 3}O]O

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Durach, Dajana; Schnick, Wolfgang [Department of Chemistry, Chair in Inorganic Solid-State Chemistry, University of Munich (LMU) (Germany)

2015-08-15

The isotypic compounds La{sub 3}[SiN{sub 4}]F and La{sub 3}[SiN{sub 3}O]O were synthesized in a radio-frequency furnace at 1600 C. The crystal structures [Pnma (no. 62), Z = 4; La{sub 3}(SiN{sub 4})F: a = 9.970(3), b = 7.697(2), c = 6.897(2) Aa, V = 529.3(3) Aa{sup 3}; La{sub 3}(SiON{sub 3})O: a = 9.950(2), b = 7.6160(15), c = 6.9080(14) Aa, V = 523.48(18) Aa{sup 3}] were elucidated from single-crystal X-ray diffraction data and corroborated by Rietveld refinement, lattice-energy calculations (Madelung part of lattice energy, MAPLE) and Raman/FTIR spectroscopy. Both compounds are homeotypic with Na{sub 2}Pr[GeO{sub 4}]OH forming a network of vertex-sharing FLa{sub 6}/OLa{sub 6} octahedra, whose voids are filled with non-condensed SiN{sub 4}/SiN{sub 3}O tetrahedra. o-La{sub 3}[SiON{sub 3}]O is the orthorhombic polymorph of this compound, which probably represents the high-temperature modification, whereas the tetragonal polymorph t-La{sub 3}[SiON{sub 3}]O represents the low-temperature modification. While the space group of the t-polymorph [I4/mcm (no. 140)] differs from the new La{sub 3}[SiN{sub 4}]F and o-La{sub 3}[SiN{sub 3}O]O, the crystal structure contains the same linking pattern. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Coating of Si3N4 fine particles with AlN by fluidized bed-CVD; Ryudoso CVD ho ni yoru Si3N4 biryushi no AlN hifuku

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Chiba, S.; Oyama, Y. [Hokkaido National Industrial Research Institute, Sapporo (Japan); Harima, K.; Kondo, K.; Shinohara, K. [Hokkaido University, Sapporo (Japan)

1996-03-10

Agglomerates of 100-250 {mu}m consisting of Si3N4 primary particles of 0.76 {mu}m were made with a rotary vibrating sieve. Si3N4 fine particles were coated with AlN by gas phase reaction with AlCl3 and NH3 in some fluidized beds of the agglomerates. The cross sectional distribution of AlN in the agglomerate was measured by EPMA analysis. As a result, uniform deposition of AlN was obtained at a relatively low reaction temperature and low gas velocity. 4 refs., 3 figs.
Angular dependence of Si3N4 etch rates and the etch selectivity of SiO2 to Si3N4 at different bias voltages in a high-density C4F8 plasma

International Nuclear Information System (INIS)

Lee, Jin-Kwan; Lee, Gyeo-Re; Min, Jae-Ho; Moon, Sang Heup

2007-01-01

The dependence of Si 3 N 4 etch rates and the etch selectivity of SiO 2 to Si 3 N 4 on ion-incident angles was studied for different bias voltages in a high-density C 4 F 8 plasma. A Faraday cage and specially designed substrate holders were used to accurately control the angles of incident ions on the substrate surface. The normalized etch yield (NEY), defined as the etch yield obtained at a given ion-incident angle normalized to that obtained on a horizontal surface, was unaffected by the bias voltage in Si 3 N 4 etching, but it increased with the bias voltage in SiO 2 etching in the range of -100 to -300 V. The NEY changed showing a maximum with an increase in the ion-incident angle in the etching of both substrates. In the Si 3 N 4 etching, a maximum NEY of 1.7 was obtained at 70 deg. in the above bias voltage range. However, an increase in the NEY at high ion-incident angles was smaller for SiO 2 than for Si 3 N 4 and, consequently, the etch selectivity of SiO 2 to Si 3 N 4 decreased with an increase in the ion-incident angle. The etch selectivity decreased to a smaller extent at high bias voltage because the NEY of SiO 2 had increased. The characteristic changes in the NEY for different substrates could be correlated with the thickness of a steady-state fluorocarbon (CF x ) film formed on the substrates

Air-stable n-type doping of graphene from overlying Si3N4 film

International Nuclear Information System (INIS)

Wang, Zegao; Li, Pingjian; Chen, Yuanfu; Liu, Jingbo; Qi, Fei; Tian, Hongjun; Zheng, Binjie; Zhou, Jinhao

2014-01-01

In this study, we report a facile method to obtain air-stable n-type graphene by plasma-enhanced chemical vapor depositing Si 3 N 4 film on the surface of graphene. We have demonstrated that the overlying Si 3 N 4 film can not only act as the penetration-barrier against H 2 O and O 2 adsorbed on the graphene surface, but also cause an effective n-type doping due to the amine groups at the interface of graphene/Si 3 N 4 . Furthermore, the studies reveal that the Dirac point of graphene can be modulated by the thickness of Si 3 N 4 film, which is due to competing effects of Si 3 N 4 -induced doping (n-type) and penetrating H 2 O (O 2 )-induced doping (p-type). We expect this method to be used for obtaining stable n-type graphene field-effect transistors in air, which will be widely used in graphene electronic devices.
Thermal expansion of spinel-type Si3N4

DEFF Research Database (Denmark)

Paszkowics, W.; Minkikayev, R.; Piszora, P.

2004-01-01

The lattice parameter and thermal expansion coefficient (TEC) for the spinel-type Si3N4 phase prepared under high-pressure and high-temperature conditions are determined for 14 K......The lattice parameter and thermal expansion coefficient (TEC) for the spinel-type Si3N4 phase prepared under high-pressure and high-temperature conditions are determined for 14 K...
Efecto de la microestructura en el comportamiento tribológico de materiales monolíticos de Si3N4 y de compuestos Si3N4–SiC

Directory of Open Access Journals (Sweden)

Silva, R. F.

2000-06-01

Full Text Available The tribological behaviour of various Si3N4 based materials, including Si3N4/SiC composites, has been analysed from room temperature up to 700ºC, and for sliding speeds between 0.5 and 2 m/s. Materials have been prepared by hot pressing at 1750ºC in nitrogen atmosphere, varying α-Si3N4 phase content, microstructure coarseness and shape and size of the SiC particles. Wear tests were performed in self-mated pairs using a pin on disc tribometer, without lubrication and at a fixed load of 5 N. Pin and disc worn surfaces were observed by scanning electron microscopy (SEM-EDS. Debris generated during tests was analysed by SEM-EDS and X-ray diffraction (XRD. Results showed friction, f, and wear coefficients, K, above 0.3 y 10-6 mm3N-1m-1, respectively. Wear mechanism depended on the microstructure and the mechanical properties of the materials.Se ha analizado el comportamiento tribológico de materiales de Si3N4 y de compuestos Si3N4/SiC, desde temperatura ambiente hasta 700ºC y en el rango de velocidades 0.5-2 m/s. Los materiales se han preparado mediante prensado en caliente a 1750ºC en atmósfera de nitrógeno, variando el contenido en fase α-Si3N4, el tamaño medio de grano, y la morfología de las partículas de SiC adicionadas. Los ensayos se han realizado en pares homólogos utilizando un tribómetro del tipo punta sobre disco, sin lubricación y a una carga constante de 5 N. Las superficies de desgaste de las puntas y los discos se observaron en un microscopio electrónico de barrido con capacidad analítica (MEB-EDX. Los residuos generados durante los ensayos se analizaron mediante MEB-EDX y difracción de rayos X (DRX. Los resultados obtenidos en los ensayos daban valores de coeficiente de fricción, f, y de desgaste, K, superiores a 0.3 y 10-6 mm3N-1m-1, respectivamente. El mecanismo de desgaste predominante dependía de la microestructura y de las propiedades mecánicas del material ensayado.
Prediction of novel hard phases of Si{sub 3}N{sub 4}: First-principles calculations

Energy Technology Data Exchange (ETDEWEB)

Cui, Lin; Hu, Meng; Wang, Qianqian; Xu, Bo; Yu, Dongli; Liu, Zhongyuan; He, Julong, E-mail: hjl@ysu.edu.cn

2015-08-15

Exploration of novel hard metastable phases of silicon nitride was performed using a recently developed particle-swarm optimization method within the CALYPSO software package. Three potential hard metastable phases of t-Si{sub 3}N{sub 4}, m-Si{sub 3}N{sub 4}, and o-Si{sub 3}N{sub 4} were predicted. These phases are mechanically and dynamically stable at ambient pressure based on their elastic constants and phonon dispersions. t-Si{sub 3}N{sub 4} and m-Si{sub 3}N{sub 4} exhibit lower energies than γ-Si{sub 3}N{sub 4} at pressures below 2.5 GPa and 2.9 GPa, respectively, which promise that the formers could be obtained by quenching from γ-Si{sub 3}N{sub 4}. o-Si{sub 3}N{sub 4} is a better high-pressure metastable phase than CaTi{sub 2}O{sub 4}-type Si{sub 3}N{sub 4} proposed by Tatsumi et al. and it can come from the transition of γ-Si{sub 3}N{sub 4} under 198 GPa. The theoretical band gaps of t-Si{sub 3}N{sub 4}, m-Si{sub 3}N{sub 4}, and o-Si{sub 3}N{sub 4} at ambient pressure were 3.15 eV, 3.90 eV, and 3.36 eV, respectively. At ambient pressure, the Vickers hardness values of t-Si{sub 3}N{sub 4} (32.6 GPa), m-Si{sub 3}N{sub 4} (31.5 GPa), and o-Si{sub 3}N{sub 4} (36.1 GPa) are comparable to β-Si{sub 3}N{sub 4} and γ-Si{sub 3}N{sub 4}. With the pressure increasing, t-Si{sub 3}N{sub 4}, m-Si{sub 3}N{sub 4}, and o-Si{sub 3}N{sub 4} will change from the brittle to ductile state at about 15.7 GPa, 7.3 GPa and 28.9 GPa, respectively. - Graphical abstract: This figure shows the crystal structures of three Si{sub 3}N{sub 4} predicted in this manuscript, and left to right: t-Si{sub 3}N{sub 4}, m-Si{sub 3}N{sub 4} and o-Si{sub 3}N{sub 4}. - Highlights: • We explored three metastable phases of Si{sub 3}N{sub 4} — t-Si{sub 3}N{sub 4}, m-Si{sub 3}N{sub 4}, and o-Si{sub 3}N{sub 4}. • The enthalpies of t and m- are much lower than that of γ at ambient pressure. • ois one further high pressure phase than γ. • o-Si{sub 3}N{sub 4} is the most hardest phase in Si
Plastic Deformation Induced by Nanoindentation Test Applied on ZrN/Si3N4 Multilayer Coatings

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Zhengtao Wu

2017-12-01

Full Text Available ZrN/Si3N4 multilayer coating that alternates with either nanocrystalline ZrN or amorphous Si3N4 interlayers was fabricated by reactively magnetron sputtering in an Ar-N2 mixture atmosphere. The thicknesses of the nanocrystalline ZrN and the amorphous Si3N4 interlayers are ~12.5 and 2.5 nm, respectively. The ZrN/Si3N4 coating exhibits a promoted hardness of 28.6 ± 1.2 GPa when compared to the binary ZrN. Microstructure evolution just underneath the nanoindentation impression of the ZrN/Si3N4 multilayer coating has been investigated. The result indicates that both ZrN nanograin rotations and plastic flow of the Si3N4 interlayers contribute to the permanent deformation of the multilayer coating induced by the nanoindentation. In addition, the introduction of the a-Si3N4 interlayers hinders both the initiation and propagation of microcracks when the multilayer coating was applied to the scratch test. The propagation deflection of the microcracks was observed attributed to the heterogenous interface, which produces the hardness promotion of the multilayer coating eventually.
Si{sub 3}N{sub 4} materials and applications; Si{sub 3}N{sub 4}-Werkstoffe und deren Anwendung

Energy Technology Data Exchange (ETDEWEB)

Woetting, G.; Leimer, G.; Gugel, E. [Cremer Forschungsinstitut GmbH und Co. KG, Roedental (Germany)

2000-07-01

Silicon nitrides, or silicon nitride-based materials, offer a very wide range of high-duty applications due to their high mechanical strength and good resistance to thermal, corrosive, and/or abrasive wear. Variation and optimization of their properties in response to intended applications is described in detail, also referring to potential new applications. (orig./CB) [German] Siliciumnitrid(Si3N4)- bzw. SN-Werkstoffe finden aufgrund ihrer hohen mechanischen Festigkeit sowie guten thermischen, korrosiven und/oder abrasiven Bestaendigkeit bereits vielfaeltige Anwendungen als hochbelastete Bauteile. Um fuer die jeweiligen Einsatzbedingungen optimale Werkstoffe einzusetzen, sind spezifische Modifizierungen moeglich und sinnvoll. Diesbezueglich kommerziell verfuegbare Si3N4-Werkstoffqualitaeten werden vorgestellt und derzeitige sowie potentielle Anwendungen ausgefuehrt. Die haeufig als Hemmnis fuer einen breiten Einsatz angefuehrten Bauteilkosten werden diskutiert. (orig.)
Characterization of rare-earth doped Si 3 N4 /SiC micro/nanocomposites

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Peter Tatarko

2010-03-01

Full Text Available Influence of various rare-earth oxide additives (La2O3, Nd2O3, Sm2O3, Y2O3, Yb2O3 and Lu2O3 on the mechanical properties of hot-pressed silicon nitride and silicon nitride/silicon carbide micro/nano-composites has been investigated. The bimodal character of microstructures was observed in all studied materials where elongated β-Si3N4 grains were embedded in the matrix of much finer Si3N4 grains. The fracture toughness values increased with decreasing ionic radius of rare-earth elements. The fracture toughness of composites was always lower than that of monoliths due to their finer Si3N4/SiC microstructures. Similarly, the hardness and bending strength values increased with decreasing ionic radius of rare-earth elements either in monoliths or composites. On the other hand, the positive influence of finer microstructure of the composites on strength was not observed due to the present defects in the form of SiC clusters and non-reacted carbon zones. Wear resistance at room temperature also increased with decreasing ionic radius of rare-earth element. Significantly improved creep resistance was observed in case either of composite materials or materials with smaller radius of RE3+.
Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy

International Nuclear Information System (INIS)

Yaguchi, Hiroyuki; Hijikata, Yasuto; Yoshida, Sadafumi; Kitamura, Yoshihiro; Nishida, Kenji; Iwahashi, Yohei

2005-01-01

We have grown hexagonal InN (h-InN) films on 3C-SiC (001) substrates by RF-N 2 plasma molecular beam epitaxy taking account of small lattice mismatch between h-InN (10-10) and 3C-SiC (110). It was found from X-ray diffraction (XRD) measurements that h-InN grows with h-InN (0001) vertical stroke vertical stroke 3C-SiC (001) and h-InN (1-100) vertical stroke vertical stroke 3C-SiC (110). XRD measurements also revealed that the h-InN epitaxial layers grown on 3C-SiC (001) are composed of single domain. Strong and sharp photoluminescence from the h-InN was clearly observed at around 0.69 eV. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Effects of Si content on microstructure and mechanical properties of TiAlN/Si3N4-Cu nanocomposite coatings

Science.gov (United States)

Feng, Changjie; Hu, Shuilian; Jiang, Yuanfei; Wu, Namei; Li, Mingsheng; Xin, Li; Zhu, Shenglong; Wang, Fuhui

2014-11-01

TiAlN/Si3N4-Cu nanocomposite coatings of various Si content (0-5.09 at.%) were deposited on AISI-304 stainless steel by DC reactive magnetron sputtering technique. The chemical composition, microstructure, mechanical and tribological properties of these coatings were systematically investigated by means of X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), nanoindentation tester, a home-made indentation system, a scratch tester and a wear tester. Results indicated that with increasing Si content in these coatings, a reduction of grain size and surface roughness, a transformation of the (1 1 1) preferred orientation was detected by XRD and FESEM. Furthermore the hardness of these coatings increase from 9.672 GPa to 18.628 GPa, and the elastic modulus reveal the rising trend that increase from 224.654 GPa to 251.933 GPa. However, the elastic modulus of TiAlN/Si3N4-Cu coating containing 3.39 at.% Si content dropped rapidly and changed to about 180.775 GPa. The H3/E2 ratio is proportional to the film resistance to plastic deformation. The H3/E2 ratio of the TiAlN/Si3N4-Cu coating containing 3.39 at.% Si content possess of the maximum of 0.11 GPa, and the indentation test indicate that few and fine cracks were observed from its indentation morphologies. The growth pattern of cracks is mainly bending growing. The present results show that the best toughness is obtained for TiAlN/Si3N4-Cu nanocomposite coating containing 3.39 at.% Si content. In addition, the TiAlN/Si3N4-Cu coating containing 3.39 at.% Si content also has good adhesion property and superior wear resistance, and the wear mechanism is mainly adhesion wear.
Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers; Las tensiones residuales y las propiedades mecánicas de compuestos multicapa de Si3N4/SiC con diferentes capas de SiC

Energy Technology Data Exchange (ETDEWEB)

Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

2017-11-01

The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [Spanish] Se ha investigado el efecto de las tensiones residuales en la resistencia, dureza y trabajo de fractura de los compuestos multicapa de Si3N4/SiC con diferentes capas de SiC. Puede ser una manera eficaz de diseñar y optimizar las propiedades mecánicas de los compuestos multicapa de Si3N4/SiC mediante el control de las propiedades de las capas de SiC. Los compuestos multicapa de Si3N4/SiC con diferentes capas de SiC se fabricaron por medio de colado en cinta en medio acuoso y sinterización sin presión. Las tensiones residuales se calcularon mediante el uso de la simulación ANSYS, los valores máximos de las fuerzas de tracción y compresión fueron 553,2 MPa y −552,1 MPa, respectivamente. Se observó una fractura escalonada a partir de las superficies de fractura. La fracción de capas de deslaminación aumenta con la tensión residual, lo que puede mejorar la fiabilidad de los materiales. La fuerza de tracción residual era beneficiosa para la mejora de la dureza y el trabajo de fractura, pero la resistencia de los compuestos disminuyó.
Development and characterization of HIP joining techniques for Si3N4 materials

International Nuclear Information System (INIS)

Sun Woo, J.

1991-09-01

The report deals with the development and optimization of reproducible techniques for joining Si 3 N 4 with Si 3 N 4 without interlayers consisting of other materials, applying hot isostatic pressing and vacuum plasma spraying. Furthermore, experiments are reported that have been performed in addition to the above-mentioned, for preparing Si 3 N 4 sintered specimens without sintering additives, applying the HIP technique. The resulting specimens have been tested for their joining characteristics, which are reported. All reported experiments have been performed varying essential parameters such as HIP temperature, pressure, holding time, surface roughness, and heat treatment. Every parameter has been examined individually for its effect on the bonding strength of the prepared Si 3 N 4 -Si 3 N 4 joint, applying 4P bending tests at room temperature and at 1200deg C. (orig./MM) [de
Fundamentals of Passive Oxidation In SiC and Si3N4

Science.gov (United States)

Thomas-Ogbuji, Linus U.

1998-01-01

The very slow oxidation kinetics of silicon carbide and silicon nitride, which derive from their adherent and passivating oxide films, has been explored at length in a broad series of studies utilizing thermogravimetric analysis, electron and optical micrography, energy dispersive spectrometry, x-ray diffractometry, micro-analytical depth profiling, etc. Some interesting microstructural phenomena accompanying the process of oxidation in the two materials will be presented. In Si3N4 the oxide is stratified, with an SiO2 topscale (which is relatively impervious to O2)underlain by a coherent subscale of silicon oxynitride which is even less permeable to O2- Such "defence in depth" endows Si3N4 with what is perhaps the highest oxidation resistance of any material, and results in a unique set of oxidation processes. In SiC the oxidation reactions are much simpler, yet new issues still emerge; for instance, studies involving controlled devitrification of the amorphous silica scale confirmed that the oxidation rate of SiC drops by more than an order of magnitude when the oxide scale fully crystallizes.
Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers

International Nuclear Information System (INIS)

Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

2017-01-01

The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [es
Microstructure evolution of the Si{sub 3}N{sub 4}/Si{sub 3}N{sub 4} joints brazed using Au-Ni-V filler alloys with different V content

Energy Technology Data Exchange (ETDEWEB)

Sun, Y. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Zhang, J., E-mail: hitzhangjie@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Zhang, H.W.; Fan, G.H.; He, Y.M. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

2011-08-18

Highlights: > Si{sub 3}N{sub 4} ceramic was brazed using Au-Ni-V filler alloy with different V content. > The microstructure evolution of the joint was study in detail in the paper. > The polygonal Ni{sub 2}SiV{sub 3} and Ni{sub 3}V phase in the joint were investigated by TEM. > The formation of different compounds and alloys in joint was detailed discussed. - Abstract: Au-Ni-V filler alloys with different vanadium contents were designed to braze Si{sub 3}N{sub 4} ceramic at 1373 K for 30 min, and the microstructures of brazing seams were investigated by SEM and TEM. When the Au-Ni-V filler alloy contains 5 at.% V, round-like Ni[Si, V, Au] precipitates form in the Au[Ni] solid solution matrix and a VN reaction layer with 0.5 {mu}m thickness appears on Si{sub 3}N{sub 4} interface. When the V content increases to 10 at.%, a new polygonal Ni{sub 2}SiV{sub 3} phase occurs in the seam, and the Ni[Si, V, Au] precipitate coarsens and VN layer thickens. With increase of V contents to 15 and 20 at.%, laminar Ni[Au] and polygonal Ni{sub 3}V precipitates form. With 25 at.% V content in the filler alloy, the Ni{sub 2}SiV{sub 3} and Ni{sub 3}V precipitates distribute homogenously in the brazing seam. These microstructure evolutions were attributed to the reaction between Si{sub 3}N{sub 4} and vanadium, which forms VN reaction layer and releases Si into the molten alloy.
Characterization of Si3N4-Al interface after corrosion tests Caracterização da interface Si3N4-Al após testes de corrosão

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C. dos Santos

2003-12-01

Full Text Available Silicon nitride is a covalent ceramic material of high corrosion resistance and mechanical stability at elevated temperatures. Due to these properties, its use in metallurgical processes, such as the casting of alloys, is increasing. Therefore, the characterization of the interface between Si3N4 and the casted metal is of great importance to investigate possible interactions, which might deteriorate the ceramic mould or contaminate the metal. In this work, the use of Si3N4 as crucible material for Al-casting has been studied, by investigating the corrosion attack of liquid Al at a temperature of 1150 ºC during 30 days in air. The interface was characterized by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. It has been found that due to superficial oxidation two oxide layers form - SiO2 on Si3N4 and Al2O3 on Al - which effectively hinder further reactions under the conditions studied, confering high corrosion resistance to the Si3N4 crucible.Nitreto de silício (Si3N4 é um material cerâmico covalente de elevada resistência à corrosão e estabilidade mecânica em temperaturas elevadas. Devido a essas propriedades, sua utilização em processos metalúrgicos, tais como em fundição de ligas metálicas, é crescente. Desta forma, a caracterização da interface entre Si3N4 e metais fundidos é de grande interesse para investigar possíveis interações as quais poderão deteriorar o material cerâmico e/ou contaminar o metal. Nesse trabalho o uso de Si3N4 como material base de cadinhos para fundição de alumínio foi estudado, pela investigação do ataque corrosivo de Al líquido a 1150 ºC durante 30 dias, ao ar. A interface foi caracterizada por difração de raios X, microscopia eletrônica de varredura e espectroscopia de energia dispersiva. É encontrado que devido à oxidação superficial dois óxidos se formam - SiO2 no Si3N4 e Al2O3 no Al - os quais evitam possíveis reações sob as condi
Improvement of photoluminescence from Ge layer with patterned Si3N4 stressors

International Nuclear Information System (INIS)

Oda, Katsuya; Okumura, Tadashi; Tani, Kazuki; Saito, Shin-ichi; Ido, Tatemi

2014-01-01

Lattice strain applied by patterned Si 3 N 4 stressors in order to improve the optical properties of Ge layers directly grown on a Si substrate was investigated. Patterned Si 3 N 4 stressors were fabricated by various methods and their effects on the strain and photoluminescence were studied. Although we found that when the stressor was fabricated by thermal chemical vapor deposition (CVD), the Ge waveguide was tensilely and compressively strained in the edge and center positions, respectively, and photoluminescence (PL) could be improved by decreasing the width of the waveguide, the crystallinity of the Ge waveguide was degraded by the thermal impact of the deposition process. Low-temperature methods were therefore used to make the patterned stressors. The tensile strain of the Ge layer increased from 0.14% to 0.2% when the stressor was grown by plasma enhanced CVD at 350 °C, but the effects of the increased tensile strain could not be confirmed because the Si 3 N 4 layer was unstable when irradiated with the excitation light used in photoluminescence measurements. Si 3 N 4 stressors grown by inductively coupled plasma CVD at room temperature increased the tensile strain of the Ge layer up to 0.4%, thus red-shifting the PL peak and obviously increasing the PL intensity. These results indicate that the Si 3 N 4 stressors fabricated by the room-temperature process efficiently improve the performance of Ge light-emitting devices. - Highlights: • Ge layers were directly grown on a Si substrate by low-temperature epitaxial growth. • Si 3 N 4 stressors were fabricated on the Ge layers by various methods. • Tensile strain of the Ge layers was improved by the Si 3 N 4 stressors. • Photoluminescence (PL) intensity was increased with the Si 3 N 4 stressors. • Red-shift of the PL spectra was observed from the tensile strained Ge layers
Evaluation excitation functions for "2"8Si(n,p)"2"8Al, "3"1P(n,p)"3"1Si, and "1"1"3In(n,γ)"1"1"4"mIn reactions

International Nuclear Information System (INIS)

Zolotarev, K.I.

2014-10-01

Cross section data for "2"8Si(n,p)"2"8Al, "3"1P(n,p)"3"1Si and "1"1"3In(n,γ)"1"1"4"mIn reactions are needed for solving a wide spectrum of scientific and technical tasks. The excitation function of "2"8Si(n,p)"2"8Al reaction refers to the nuclear data involved in fusion reactor design calculations. The "2"8Si(n,p)"2"8Al reaction is interesting also as the monitor reaction for measurements at fusion facilities. Activation detectors on the basis of the 31P(n,p)31Si reaction are commonly used in the reactor dosimetry. The "1"1"3In(n,γ)"1"1"4"mIn reaction is promising regarding reactor dosimetry application for two reasons. First, due to the "1"1"4"mIn decay parameters which are rather suitable for activation measurements. Half-life of "1"1"4"mIn is equal to T_1/_2 = (49.51 ± 0.01) days and gamma spectrum accompanying decay has only one line with energy 190.27 keV and intensity (15.56 ± 0.15)%. Second, the "1"1"3In(n,γ)"1"1"4"mIn reaction rate may be measured by using one activation detector simultaneously with the "1"1"5In(n,γ)"1"1"6"mIn reaction. Preliminary analysis of existing evaluated excitation functions for "2"8Si(n,p)"2"8Al, "3"1P(n,p)"3"1Si and "1"1"3In(n,γ)"1"1"4"mIn reactions show that new evaluations are needed for all above mentioned reactions. This report is devoted to the preparation of the new evaluations of cross sections data and related covariance matrixes of uncertainties for the "2"8Si(n,p)"2"8Al, "3"1P(n,p)"3"1Si and "1"1"3In(n,γ)"1"1"4"mIn reactions.
Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Directory of Open Access Journals (Sweden)

Jiongjiong Mo

2017-01-01

Full Text Available The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different VTH shift for different gate dielectrics. Single SiO2 layer shows the worst negative VTH at VG=0 V, while double Si3N4/SiO2 shows negative VTH shift at VG=-5 V, positive VTH shift at VG=10 V, and negligible VTH shift at VG=0 V.
Tribological characteristics of Si3N4-based composites in unlubricated sliding against steel ball

International Nuclear Information System (INIS)

Liu, C.-C.; Huang, J.-L.

2004-01-01

The dry-sliding wear mechanism of Si 3 N 4 -based composites against AISI-52100 steel ball was studied using a ball-on-disc mode in a reciprocation motion. The addition of TiN particles can increase the fracture toughness of Si 3 N 4 -based composites. The fracture toughness of Si 3 N 4 -based composites played an important role for wear behavior. The Si 3 N 4 -based composites exhibits a small friction and wear coefficient compared to monolithic Si 3 N 4 . Atomic force microscopy (AFM) studies displayed fine wear grooves along the sliding traces. The subsurface deformation shows that the microcrack propagation extends along the TiN/Si 3 N 4 grain interface. The wear mechanisms were determined with scanning electron microscopy, transmission electron microscopy, X-ray diffraction and atomic force microscopy
Tribological Behavior of Si3N4/Ti3SiC2 Contacts Lubricated by Lithium-Based Ionic Liquids

Directory of Open Access Journals (Sweden)

Haizhong Wang

2014-01-01

Full Text Available The tribological performance of Si3N4 ball sliding against Ti3SiC2 disc lubricated by lithium-based ionic liquids (ILs was investigated using an Optimol SRV-IV oscillating reciprocating friction and wear tester at room temperature (RT and elevated temperature (100°C. Glycerol and the conventional imidazolium-based IL 1-hexyl-3-methylimidazolium bis(trifluoromethylsulfonylimide (L-F106 were used as references under the same experimental conditions. The results show that the lithium-based ILs had higher thermal stabilities than glycerol and lower costs associated with IL preparation than L-F106. The tribotest results show that the lithium-based ILs were effective in reducing the friction and wear of Si3N4/Ti3SiC2 contacts. [Li(urea]TFSI even produced better tribological properties than glycerol and L-F106 both at RT and 100°C. The SEM/EDS and XPS results reveal that the excellent tribological endurance of Si3N4/Ti3SiC2 contacts lubricated by lithium-based ILs was mainly attributed to the formation of surface protective films composed of various tribochemical products.

Process control & monitoring for laser micromaching of Si3N4 ceramics

CSIR Research Space (South Africa)

Tshabalala, L

2012-09-01

Full Text Available Laser machining which is a non-contact process that offers the advantage of machining advanced ceramics. In laser machining Si3N4, surface temperature is increased and controlled to evaporate the YSiAlON glassy phase of the Si3N4. However...
The temperature dependence of the Young's modulus of MgSiN2, AlN and Si3N4

NARCIS (Netherlands)

Bruls, R.J.; Hintzen, H.T.J.M.; With, de G.; Metselaar, R.

2001-01-01

The temperature dependence of the Young's modulus of MgSiN2 and AlN was measured between 293 and 973 K using the impulse excitation method and compared with literature data reported for Si3N4. The data could be fitted with . The values of the fitting parameters E0 and T0 are related to the Debye
Preparation of rod-like β-Si3N4 single crystal particles

International Nuclear Information System (INIS)

Hirao, K.; Tsuge, A.; Brito, M.E.; Kanzaki, S.

1994-01-01

The use of β-Si 3 N 4 particles as a seed material has been demonstrated to be effective for development of a self-reinforcing microstructure in sintered silicon nitride ceramics. We have confirmed the seeding effect and arrived at a concept that seed particles should consist of rod-like single crystals free from defects and with a large diameter. The present work describes our attempts to produce such particles with a controlled morphology and in high amount. β-Si 3 N 4 particles with a diameter of 1μm and length of 5μm were obtained by heating a mixture of α-Si 3 N 4 , SiO 2 and Y 2 O 3 , followed by acid rinse treatments to remove residual glassy phase. (orig.)
Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells

International Nuclear Information System (INIS)

Kim, Hee-Dong; An, Ho-Myoung; Kim, Kyoung Chan; Seo, Yujeong; Kim, Tae Geun; Nam, Ki-Hyun; Chung, Hong-Bay; Lee, Eui Bok

2010-01-01

An effective resistive-switching effect has been observed in silicon nitride (Si 3 N 4 ) dielectrics in Ag/Si 3 N 4 /Al memory cells. The ratio of the low resistance to high resistance state was larger than 10 7 at ±1.2 V for a 10 nm thick Si 3 N 4 layer. This switching behavior is attributed to a change in the conductivity of the Si 3 N 4 dielectrics, depending on whether nitride-related traps are filled with electrons under positive biases or unfilled under negative biases. This assertion is experimentally confirmed from the relationship between the amount of charges trapped in the Si 3 N 4 layer and the corresponding changes in its resistance with respect to bias voltages. In addition, the formation or dissolution of the conductive path is confirmed by conductive atomic force microscopy current images
DSC法研究MMA／纳米Si3N4体系的聚合过程%STUDY ON POLYMERIZATION PROCESS OF MMA/NANO-SI3N4 BY DSC

Institute of Scientific and Technical Information of China (English)

王小东

2011-01-01

Polymerization process of MMA/nano-Si3N4 was studied by DSC. Effects of polymerization temperature, nano-Si3N4 amount and initator concentration of AIBN on polymerization rate were investigated in this article. The results showed that with the polymerization temperature rising,the rate of polymerization increased;the initiatior concentration could effectually improve the polymerization rate; but with the increasing of nano-Si3N4 amount, the polymerization rate was decreased.%利用差示扫描量热仪（DSC）对MMA／纳米Si3N4体系的聚合过程进行研究，着重考察了聚合温度，纳米Si2N4粉体加入量及引发剂AIBN用量对体系聚合速率的影响．结果表明：升高聚合反应温度，增大引发剂用量，均可使体系的凝胶效应提前出现，聚合速率增大；而纳米Si3N4粉体的加入对体系的聚合起到延缓的作用，且随着加入量的增加，聚合速率逐渐降低．
Processing, Microstructure, and Mechanical Properties of Si3N4/SiC Nanocomposites from Precursor Derived Ceramics

Science.gov (United States)

Strong, Kevin Thomas, Jr.

Polymer-derived ceramics (PDCs) provides a unique processing route to create Si3N4/SiC composites. Silazane precursor polyureasilazane (Ceraset PURS20) produce's an amorphous SiCN ceramic at temperatures of ~800 -- 1200 °C and crystallizes to a Si3N4/SiC nanocomposite at temperatures >1500 °C. A novel processing technique was developed where crosslinked polymers were heat-treated in a reactive NH3 atmosphere to control the stoichiometry of the pyrolyzed SiCN ceramic. Using this technique processing parameters were established to produce SiCN powders that resulted in nanocomposites with approximately 0, 5, 10, 20 and 30 vol. % SiC. Lu2O3 was added to these powders as a sintering aid and were densified using Hot Pressing and Field Assisted Sintering. The sintered nanocomposites resulted in microstructures with multiple-length scales. These length-scales included Si3N4 (0.1 -- 5 microm), SiC (10 -- 100 nm) and the intergranular grain boundary phase (<1 nm). Using a combination of SEM and TEM it was possible to quantify some of these microstructural features such as the size and location of the SiC. Hardness and fracture toughness testing was conducted to compared the room temperature mechanical properties of these resultant microstructures. This research was intended to develop robust processing approaches that can be used to control the nanostructures of Si3N4/SiC composites with significant structural features at multiple length scales. The control of their features and the investigation of their affect on the properties of composites can be used to simulate the affect of the structure on properties. These models can then be used to design optimal microstructures for specific applications.
Highly selective SiO2 etching over Si3N4 using a cyclic process with BCl3 and fluorocarbon gas chemistries

Science.gov (United States)

Matsui, Miyako; Kuwahara, Kenichi

2018-06-01

A cyclic process for highly selective SiO2 etching with atomic-scale precision over Si3N4 was developed by using BCl3 and fluorocarbon gas chemistries. This process consists of two alternately performed steps: a deposition step using BCl3 mixed-gas plasma and an etching step using CF4/Ar mixed-gas plasma. The mechanism of the cyclic process was investigated by analyzing the surface chemistry at each step. BCl x layers formed on both SiO2 and Si3N4 surfaces in the deposition step. Early in the etching step, the deposited BCl x layers reacted with CF x radicals by forming CCl x and BF x . Then, fluorocarbon films were deposited on both surfaces in the etching step. We found that the BCl x layers formed in the deposition step enhanced the formation of the fluorocarbon films in the CF4 plasma etching step. In addition, because F radicals that radiated from the CF4 plasma reacted with B atoms while passing through the BCl x layers, the BCl x layers protected the Si3N4 surface from F-radical etching. The deposited layers, which contained the BCl x , CCl x , and CF x components, became thinner on SiO2 than on Si3N4, which promoted the ion-assisted etching of SiO2. This is because the BCl x component had a high reactivity with SiO2, and the CF x component was consumed by the etching reaction with SiO2.
Lattice dynamics of a- Si3N4

International Nuclear Information System (INIS)

Schulz, P.A.B.; Silva, C.E.T.G. da

1984-01-01

We introduce a model for the lattice dynamics of SI 3 N 4 in its amorphous phase. This model is based on a Born hamiltonian, solved in the Bethe lattice approximation. We included the local vicinity until third nearest neighbours, building up the central cluster. (M.W.O.) [pt
Preparation of Si3N4 Form Diatomite via a Carbothermal Reduction-Nitridation Process

Science.gov (United States)

Ma, Bin; Huang, Zhaohui; Mei, Lefu; Fang, Minghao; Liu, Yangai; Wu, Xiaowen; Hu, Xiaozhi

2016-05-01

Si3N4 was produced using diatomite and sucrose as silicon and carbon sources, respectively. The effect of the C/SiO2 molar ratio, heating temperature and soaking time on the morphology and phase compositions of the final products was investigated by scanning electron microscopy, x-ray diffraction analysis and energy dispersive spectroscopy. The phase equilibrium relationships of the system at different heating temperatures were also investigated based on the thermodynamic analysis. The results indicate that the phase compositions depended on the C/SiO2 molar ratio, heating temperature and soaking time. Fabrication of Si3N4 from the precursor via carbothermal reduction nitridation was achieved at 1550°C for 1-8 h using a C/SiO2 molar ratio of 3.0. The as-prepared Si3N4 contained a low amount of Fe3Si (<1 wt.%).
Electronic and optical properties of Y-doped Si{sub 3}N{sub 4} by density functional theory

Energy Technology Data Exchange (ETDEWEB)

Huang, Zhifeng [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Chen, Fei, E-mail: chenfei027@gmail.com [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Key Laboratory of Advanced Technology for Specially Functional Materials, Ministry of Education, Wuhan University of Technology, Wuhan 430070 (China); Su, Rui; Wang, Zhihao; Li, Junyang; Shen, Qiang [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Zhang, Lianmeng [State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Key Laboratory of Advanced Technology for Specially Functional Materials, Ministry of Education, Wuhan University of Technology, Wuhan 430070 (China)

2015-07-15

Highlights: • Y-doped α-Si{sub 3}N{sub 4} and β-Si{sub 3}N{sub 4} are systematically investigated by DFT. • Impacts of local structure and bond character on electronic property are studied. • Static dielectric constants and optical absorption properties are investigated. - Abstract: Geometry structures, formation energies, electronic and optical properties of Y-doped α-Si{sub 3}N{sub 4} and β-Si{sub 3}N{sub 4} are investigated based on the density functional theory (DFT). The low values of formation energies indicate both Y-doped Si{sub 3}N{sub 4} models can be easily synthesized. Besides, the negative formation energies of α-Y{sub i}-Si{sub 3}N{sub 4} demonstrate that interstitial Y-doped α-Si{sub 3}N{sub 4} has an excellent stability. The energies of impurity levels are different resulting from the different chemical environment around Y atoms. The impurity levels localized in the band gap reduces the maximum energy gaps, which enhances the optical properties of Si{sub 3}N{sub 4}. The static dielectric constants become larger and the optical absorption spectra show the red-shift phenomena for all Y-doped Si{sub 3}N{sub 4} models.
Enhancement of photoluminescence properties and modification of crystal structures of Si3N4 doping Li2Sr0.995SiO4:0.005Eu2+ phosphors

International Nuclear Information System (INIS)

Song, Kaixin; Zhang, Fangfang; Chen, Daqin; Wu, Song; Zheng, Peng; Huang, Qingming; Jiang, Jun; Xu, Junming; Qin, Huibin

2015-01-01

Highlights: • Si 3 N 4 modified Li 2 Sr 0.995 SiO 4 :0.005Eu 2+ phosphors were prepared. • The luminescence intensity of Li 2 Sr 0.995 SiO 4 :Eu 2+ was enhanced by doping Si 3 N 4 . • The fluorescence decay times and thermal stability were enhanced by doping Si 3 N 4 . - Abstract: Si 3 N 4 modified Li 2 Sr 0.995 SiO 4 :0.005Eu 2+ (Li 2 Sr 0.995 SiO 4−3x/2 N x :0.005Eu 2+ ) phosphors were synthesized with the conventional solid-state reaction in the reduced atmosphere. The crystal structure and vibrational modes were analyzed by X-ray diffraction, Raman scattering spectroscopy and Rietveld crystal structure refinement. Photoluminescence (PL) and photoluminescence excitation (PLE) spectra showed that Li 2 Sr 0.995 SiO 4−3x/2 N x :0.005Eu 2+ powder exhibited a broad yellow emission band centered at 560 nm under the excitation of 460 nm visible light, due to the 4f 6 5d 1 → 4f 7 transition of Eu 2+ . The partial nitridation of Li 2 Sr 0.995 SiO 4−3x/2 N x :0.005Eu 2+ (x = 0.01) phosphors led to a large enhancement in the luminescence intensity, as much as 190%. At the same time, the fluorescence decay behavior curves further showed that the photoluminescence efficiencies of Li 2 Sr 0.995 SiO 4−3x/2 N x :0.005Eu 2+ phosphors were enhanced by addition of Si 3 N 4 . The temperature quenching characteristics confirmed that the oxynitride based Li 2 Sr 0.995 SiO 4−3x/2 N x :0.005Eu 2+ showed slightly higher stability. It is implied that Li 2 Sr 0.995 SiO 4−3x/2 N x :0.005Eu 2+ phosphors had a possible potential application on white LEDs to match blue light chips
Improvement of photoluminescence from Ge layer with patterned Si{sub 3}N{sub 4} stressors

Energy Technology Data Exchange (ETDEWEB)

Oda, Katsuya, E-mail: Katsuya.Oda.cb@hitachi.com; Okumura, Tadashi; Tani, Kazuki; Saito, Shin-ichi; Ido, Tatemi

2014-04-30

Lattice strain applied by patterned Si{sub 3}N{sub 4} stressors in order to improve the optical properties of Ge layers directly grown on a Si substrate was investigated. Patterned Si{sub 3}N{sub 4} stressors were fabricated by various methods and their effects on the strain and photoluminescence were studied. Although we found that when the stressor was fabricated by thermal chemical vapor deposition (CVD), the Ge waveguide was tensilely and compressively strained in the edge and center positions, respectively, and photoluminescence (PL) could be improved by decreasing the width of the waveguide, the crystallinity of the Ge waveguide was degraded by the thermal impact of the deposition process. Low-temperature methods were therefore used to make the patterned stressors. The tensile strain of the Ge layer increased from 0.14% to 0.2% when the stressor was grown by plasma enhanced CVD at 350 °C, but the effects of the increased tensile strain could not be confirmed because the Si{sub 3}N{sub 4} layer was unstable when irradiated with the excitation light used in photoluminescence measurements. Si{sub 3}N{sub 4} stressors grown by inductively coupled plasma CVD at room temperature increased the tensile strain of the Ge layer up to 0.4%, thus red-shifting the PL peak and obviously increasing the PL intensity. These results indicate that the Si{sub 3}N{sub 4} stressors fabricated by the room-temperature process efficiently improve the performance of Ge light-emitting devices. - Highlights: • Ge layers were directly grown on a Si substrate by low-temperature epitaxial growth. • Si{sub 3}N{sub 4} stressors were fabricated on the Ge layers by various methods. • Tensile strain of the Ge layers was improved by the Si{sub 3}N{sub 4} stressors. • Photoluminescence (PL) intensity was increased with the Si{sub 3}N{sub 4} stressors. • Red-shift of the PL spectra was observed from the tensile strained Ge layers.
Colloidal processing and rapid prototyping of Si{sub 3}N{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Liwu Wang

1998-12-01

Some progresses have been made in the wet shaping of Si{sub 3}N{sub 4} based on a better understanding of the colloidal behavior of suspensions and by improved pressure casting with porous polystyrene (PS) molds. This work illustrated that the combination of proper colloidal processing and rapid prototyping is an effective way to fabricate high-performance ceramics with complex shapes. In colloidal processing the packing density and microstructure of green bodies can be controlled if the interaction between ceramic particles in suspensions and the conditions under which the suspensions are consolidated are understood. Therefore, detailed studies on the surface chemistry of the Si{sub 3}N{sub 4} powder, the dispersing behavior of Si{sub 3}N{sub 4} suspensions, the influence of dispersants and the mechanism during powder consolidation into complex-shaped green bodies are performed. (orig.)
Fatigue strength of Al2O3 and Si3N4 ceramics

International Nuclear Information System (INIS)

Sonsino, C.M.

1992-01-01

Various Al 2 O 3 ceramics and random samples of two Si 3 N 4 ceramics were examined, with all specimens differing in terms of material and manufacturing parameters. Of the Al 2 O 3 ceramics, randomly selected specimens were tested for their banding strength at room temperature, and three specifically selected specimens were tested for their compressive strength at room temperature, at 800 C and at 1200 C. A number of specimen variants were examined by cyclic fatigue tests at room temperature and 800 C, and at 1200 C in one case, the specimens used being slightly notched specimens (α n = 1,02 and 1,08), or more heavily notched speciments (α n = 1.77, 1.90 and 2.24), with bending loads being either cyclic or growing. The Si 3 N 4 specimens were randomly chosen for bending tests and cyclic fatigue tests, at room temperature. (orig./MM) [de
Interaction of silicene with β-Si3N4(0001)/Si(111) substrate; energetics and electronic properties

International Nuclear Information System (INIS)

Filippone, Francesco

2014-01-01

The free-standing, quasi-2D layer of Si is known as silicene, in analogy with graphene. Much effort is devoted in the study of silicene, since, similarly to graphene, it shows a very high electron mobility. The interaction of silicene with a hybrid substrate, β-Si 3 N 4 (0001)/Si(111), exposing the β-Si 3 N 4 (0001) surface, has been studied by means of Density Functional calculations, with van der Waals interactions included. Once deepened the most important structural and electronic features of the hybrid substrate, we demonstrated that an electron transfer occurs from the substrate to the silicene layer. In turn, such an electron transfer can be modulated by the doping of the substrate. The β-Si 3 N 4 /silicene interaction appears to be strong enough to ensure adequate adsorption stability. It is also shown that electronic states of substrate and adsorbate still remain decoupled, paving the way for the exploitation of the peculiar electron mobility properties of the silicene layer. A detailed analysis in both direct and reciprocal space is reported. (paper)
Investigation of the fabrication processes of AlGaN/AlN/GaN HEMTs with in situ Si3N4 passivation

International Nuclear Information System (INIS)

Tomosh, K. N.; Pavlov, A. Yu.; Pavlov, V. Yu.; Khabibullin, R. A.; Arutyunyan, S. S.; Maltsev, P. P.

2016-01-01

The optimum mode of the in situ plasma-chemical etching of a Si 3 N 4 passivating layer in C 3 F 8 /O 2 medium is chosen for the case of fabricating AlGaN/AlN/GaN HEMTs. It is found that a bias of 40–50 V at a high-frequency electrode provides anisotropic etching of the insulator through a resist mask and introduces no appreciable radiation-induced defects upon overetching of the insulator films in the region of gate-metallization formation. To estimate the effect of in situ Si 3 N 4 growth together with the heterostructure in one process on the AlGaN/AlN/GaN HEMT characteristics, transistors with gates without the insulator and with gates through Si 3 N 4 slits are fabricated. The highest drain current of the AlGaN/AlN/GaN HEMT at 0 V at the gate is shown to be 1.5 times higher in the presence of Si 3 N 4 than without it.
Interfacial microstructure of partial transient liquid phase bonded Si3N4-to-Inconel 718 joints

International Nuclear Information System (INIS)

Kim, Jae Joong; Park, Jin-Woo; Eagar, Thomas W.

2003-01-01

This work presents transmission electron microscopy (TEM) analysis of the interfacial microstructure in Si 3 N 4 -to-Inconel 718 joints with Ni interlayers produced by partial transient liquid phase bonding (PTLPB). Ti and Cu microfoils have been inserted between Si 3 N 4 and the Ni interlayer and joining has been performed at lower temperatures than previous PTLPBs of Si 3 N 4 with the same insert metals. The TEM work is focused on phase identification of the reaction layers between the Si 3 N 4 and the Ni interlayer. According to the TEM analysis, most of the Cu precipitates without reacting with Ti and Ni. Si diffused in the filler metal and thin reaction layer formed at the interface between Si 3 N 4 and the filler metal producing good bond-formation and hence, high interfacial strength. No interfacial fractures occurred after cooling from the bonding temperature of 900 deg. C, which supports the results observed in the TEM analysis. This work confirms that this joining process can produce a more heat resistant Si 3 N 4 -to-Inconel 718 joint than active brazing using Ag-Cu-Ti alloys
Friction and wear study of NR/SBR blends with Si3N4Filler

Science.gov (United States)

GaneshKumar, A.; Balaganesan, G.; Sivakumar, M. S.

2018-04-01

The aim of this paper is to investigate mechanical and frictional properties of natural rubber/styrene butadiene rubber (NR/SBR) blends with and without silicon nitride (Si3N4) filler. The rubber is surface modified by silane coupling agent (Si-69) for enhancing hydrophobic property. The Si3N4of percentage 0 1, 3, 5 and 7, is incorporated into NR/SBR rubber compounds with 20% precipitated silica. The specimens with and without fillers are prepared as per standard for tensile and friction testing. Fourier transform infrared (FTIR) spectroscopy test is conducted and it is inferred that the coupling agent is covalently bonded on the surface of Si3N4 particles and an organic coating layer is formed. The co-efficient of friction and specific wear rate of NR/SBR blends are examined using an in-house built friction tester in a disc-on-plate (DOP) configuration. The specimens are tested to find coefficient of friction (COF) against steel grip antiskid plate under dry, mud, wet and oil environmental conditions. It is found that the increase in tensile strength and modulus at low percentage of Si3N4 dispersion. It is also observed that increase in sliding friction co-efficient and decrease in wear rate for 1% of Si3N4 dispersion in NR/SBR blends. The friction tested surfaces are inspected using Scanning Electron Microscope (SEM) and 3D non contact surface profiler.
Corrosion resistant coatings for SiC and Si{sub 3}N{sub 4} ceramics

Energy Technology Data Exchange (ETDEWEB)

Nguyen Thierry; Shaokai Yang; J.J. Brown

1998-09-01

It is the goal of this program to (1) develop coatings for SiC and Si{sub 3}N{sub 4} that will enhance their performance as heat exchangers under coal combustion conditions and (2) to conduct an in-depth evaluation of the cause and severity of ceramic heat exchanger deterioration and failure under coal combustion conditions.
Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si3N4/DLC substrate

International Nuclear Information System (INIS)

Roman, W S; Riascos, H; Caicedo, J C; Ospina, R; Tirado-MejIa, L

2009-01-01

Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si 3 N 4 substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm -2 , 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm -1 for B - N bonding and bands around 1700 cm -1 associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), α-Si 3 N 4 (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si 3 N 4 /DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

Joining of Si3N4 ceramic using PdCo(NiSiB–V system brazing filler alloy and interfacial reactions

Directory of Open Access Journals (Sweden)

Huaping Xiong

2014-02-01

Full Text Available The wettability of V-active PdCo-based alloys on Si3N4 ceramic was studied with the sessile drop method. And the alloy of Pd50.0–Co33.7–Ni4.0–Si2.0–B0.7–V9.6 (wt%, was developed for Si3N4 ceramic joining in the present investigation. The rapidly-solidified brazing foils were fabricated by the alloy Pd50.0–Co33.7–Ni4.0–Si2.0–B0.7–V9.6. The average room-temperature three-point bend strength of the Si3N4/Si3N4 joints brazed at 1453 K for 10 min was 205.6 MPa, and the newly developed braze gives joint strengths of 210.9 MPa, 206.6 MPa and 80.2 MPa at high temperatures of 973 K, 1073 K and 1173 K respectively. The interfacial reaction products in the Si3N4/Si3N4 joint brazed at 1453 K for 10 min were identified to be VN and Pd2Si by XRD analysis. Based on the XEDS analysis result, the residual brazing alloy existing at the central part of the joint was verified as Co-rich phases, in which the concentration of element Pd was high up to 18.0–19.1 at%. The mechanism of the interfacial reactions was discussed. Pd should be a good choice as useful alloying element in newer high-temperature braze candidates for the joining of Si-based ceramics.
Characterization of a n+3C/n−4H SiC heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Minamisawa, R. A.; Mihaila, A. [Department of Power Electronics, ABB Corporate Research Center, CH-5405 Baden-Dättwil (Switzerland); Farkas, I.; Hsu, C.-W.; Janzén, E. [Semiconductor Materials, IFM, Linköping University, SE-58183 Linköping (Sweden); Teodorescu, V. S. [National Institute of Material Physics, R-077125 Bucharest-Măgurele (Romania); Afanas' ev, V. V. [Semiconductor Physics Laboratory, KU Leuven, 3001 Leuven (Belgium); Rahimo, M. [ABB Semiconductors, Fabrikstrasse 3, CH-5600 Lenzburg (Switzerland)

2016-04-04

We report on the fabrication of n + 3C/n-4H SiC heterojunction diodes (HJDs) potentially promising the ultimate thermal stability of the junction. The diodes were systematically analyzed by TEM, X-ray diffraction, AFM, and secondary ion mass spectroscopy, indicating the formation of epitaxial 3C-SiC crystal on top of 4H-SiC substrate with continuous interface, low surface roughness, and up to ∼7 × 10{sup 17 }cm{sup −3} dopant impurity concentration. The conduction band off-set is about 1 V as extracted from CV measurements, while the valence bands of both SiC polytypes are aligned. The HJDs feature opening voltage of 1.65 V, consistent with the barrier height of about 1.5 eV extracted from CV measurement. We finally compare the electrical results of the n + 3C/n-4H SiC heterojunction diodes with those featuring Si and Ge doped anodes in order to evaluate current challenges involved in the fabrication of such devices.
Morphology and surface-plasmon resonance of silver nanoparticles sandwiched between Si3N4 and BN layers

International Nuclear Information System (INIS)

Toudert, J.; Camelio, S.; Babonneau, D.; Denanot, M.-F.; Girardeau, T.; Espinos, J.P.; Yubero, F.; Gonzalez-Elipe, A.R.

2005-01-01

Nanocermet trilayered thin films consisting of silver nanoclusters sandwiched between two dielectric layers (the buffer and the cap) have been synthesized by ion-beam sputtering with an alternate deposition of the metal and the dielectric species. The influence of the amount of silver, the nature of the buffer and the cap (BN or Si 3 N 4 ), and a time delay before the cap deposition on clusters morphology and repartition have been investigated by transmission electron microscopy. It has been observed that the clusters display truncated ellipsoidal shapes in which the height to diameter ratio H/D decreases as the amount of deposited silver increases. For a given amount of silver, this ratio is lower in the case of a Si 3 N 4 cap, whatever the nature of the buffer. Two explanations are proposed to account for this 'cap effect' on clusters morphology: the first one is based on a calculation of the H/D minimizing the surface free energy of the clusters embedded between the buffer and the cap; the second one holds on the shape relaxation of the coalesced nonequilibrium clusters towards their equilibrium shape with the buffer, this process occurring until clusters are fully covered with the cap. Because of the higher deposition rate of Si 3 N 4 compared to BN, a Si 3 N 4 cap would allow a less efficient reshaping and consequently lead to flatter clusters. This explanation is supported by the temporal evolution of clusters morphology and repartition observed during the time delay before deposition of the cap. The evolution of the spectral position of the surface-plasmon resonance (SPR) of the trilayers as a function of their structure has also been investigated by optical transmittance measurements. The influence of cluster morphology, as well as the nature of the buffer and the cap on the SPR spectral position are discussed
Nanowires and nanotubes of BN, GaN and Si3N4

International Nuclear Information System (INIS)

Deepak, F.L.; Gundiah, G.; Govindaraj, A.; Rao, C.N.

2002-01-01

Simple methods of synthesizing nanotubes and nanowires of boron nitride, gallium nitride and silicon nitride have been investigated. The nanotubes and nanowires have been examined by electron microscopy and other techniques. In the case of BN, activated carbon or multi-walled carbon nanotubes (MWNTs) was heated with boric acid in the presence of NH 3 . With activated carbon, BN nanowires constitute the primary products, but good yields of BN nanotubes are obtained with MWNTs. Aligned BN nanotubes are obtained when aligned MWNTs are employed as the starting material suggesting templating role of carbon nanotubes. Single crystal gallium nitride nanowires have been obtained by heating carbon nanotubes coated with gallium acetylacetonate in NH 3 vapor at 910 o C. Single walled carbon nanotubes were used as templated to reduce the diameter of the GaN nanowires. The growth direction of the GaN nanowires is nearly perpendicular to the [100] planes and the nanowires exhibit satisfactory photoluminescence spectra. Si 3 N 4 nanowires have been synthesized by heating multi-walled carbon nanotubes with silica gel at 1360 o C in an atmosphere of NH 3 . Si 3 N 4 nanotubes are found occasionally when aligned multi-walled nanotubes are employed as templates. (author)
Electrical properties of MBE grown Si{sub 3}N{sub 4}-cubic GaN MIS structures

Energy Technology Data Exchange (ETDEWEB)

Zado, A.; Lischka, K.; As, D.J. [University of Paderborn, Faculty of Science, Department of Physics, Warburger Str. 100, 33098 Paderborn (Germany)

2012-03-15

In this work we report on the electrical characterization of non-polar cubic GaN metal-insulator-semiconductor (MIS) structures. Si{sub 3}N{sub 4} layers were deposited in-situ on top of cubic GaN grown on 3C-SiC (001) substrates. The electric characteristics of the MIS structures are measured by capacitance and admittance spectroscopy techniques. From the hysteresis in the capacitance-voltage curves and the peak height of the conductance G{sub p} -{omega} frequency curves the interface state densities are calculated. We find interface traps about 0.3 eV below the conduction band. The density of these traps is D{sub it} = 2.5x10{sup 11} cm{sup -2}eV{sup -1}. This is one order of magnitude lower than in MIS structures with a Si{sub 3}N{sub 4} insulator produced by plasma enhanced vapour deposition and two orders of magnitude lower than in MIS structures on c-GaN with SiO{sub 2} as insulator (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
High-temperature elastic properties of in situ-reinforced Si3N4

International Nuclear Information System (INIS)

Swift, Geoffrey A.; Uestuendag, Ersan; Clausen, Bjoern; Bourke, Mark A.M.; Lin, H.-T.

2003-01-01

A high-temperature tensile stress study of a monolithic silicon nitride (Si 3 N 4 ) was performed with time-of-flight neutron diffraction. A dedicated engineering diffractometer was employed at temperatures reaching 1375 deg. C. Rietveld refinements of diffraction spectra allowed the determination of (1) the coefficient of thermal expansion tensor during heating and (2) lattice strains during loading. The stress-strain response of individual lattice reflections was used to calculate the single-crystal elastic stiffness tensor of Si 3 N 4 at 1375 deg. C via a self-consistent model
Incorporating Si3 N4 into PEEK to Produce Antibacterial, Osteocondutive, and Radiolucent Spinal Implants.

Science.gov (United States)

Pezzotti, Giuseppe; Marin, Elia; Adachi, Tetsuya; Lerussi, Federica; Rondinella, Alfredo; Boschetto, Francesco; Zhu, Wenliang; Kitajima, Takashi; Inada, Kosuke; McEntire, Bryan J; Bock, Ryan M; Bal, B Sonny; Mazda, Osam

2018-04-24

Polyetheretherketone (PEEK) is a popular polymeric biomaterial which is primarily used as an intervertebral spacer in spinal fusion surgery; but it is developed for trauma, prosthodontics, maxillofacial, and cranial implants. It has the purported advantages of an elastic modulus which is similar to native bone and it can be easily formed into custom 3D shapes. Nevertheless, PEEK's disadvantages include its poor antibacterial resistance, lack of bioactivity, and radiographic transparency. This study presents a simple approach to correcting these three shortcomings while preserving the base polymer's biocompatibility, chemical stability, and elastic modulus. The proposed strategy consists of preparing a PEEK composite by dispersing a minor fraction (i.e., 15 vol%) of a silicon nitride (Si 3 N 4 ) powder within its matrix. In vitro tests of PEEK composites with three Si 3 N 4 variants-β-Si 3 N 4 , α-Si 3 N 4 , and β-SiYAlON-demonstrate significant improvements in the polymer's osteoconductive versus SaOS-2 cells and bacteriostatic properties versus gram-positive Staphylococcus epidermidis bacteria. These properties are clearly a consequence of adding the bioceramic dispersoids, according to chemistry similar to that previously demonstrated for bulk Si 3 N 4 ceramics in terms of osteogenic behavior (vs both osteosarcoma and mesenchymal progenitor cells) and antibacterial properties (vs both gram-positive and gram-negative bacteria). © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Whispering Gallery Mode Resonances from Ge Micro-Disks on Suspended Beams

Directory of Open Access Journals (Sweden)

Abdelrahman Zaher Al-Attili

2015-05-01

Full Text Available Ge is considered to be one of the most promising materials for realizing full monolithic integration of a light source on a silicon (Si photonic chip. Tensile-strain is required to convert Ge into an optical gain material and to reduce the pumping required for population inversion. Several methods of strain application to Ge are proposed in literature, of which the use of free-standing beams fabricated by micro-electro-mechanical systems (MEMS processes are capable of delivering very high strain values. However, it is challenging to make an optical cavity within free-standing Ge beams, and here, we demonstrate the fabrication of a simple cavity while imposing tensile strain by suspension using Ge-On-Insulator (GOI wafers. Ge micro-disks are made on top of suspended SiO$_{2}$ beams by partially removing the supporting Si substrate. According to Raman spectroscopy, a slight tensile strain was applied to the Ge disks through the bending of the SiO2 beams. Whispering-Gallery-Mode (WGM resonances were observed from a disk with a diameter of 3um, consistent with the finite-domain time-difference simulations. The quality (Q factor was 192, and upon increasing the pumping power, the Q-factor was degraded due to the red-shift of Ge direct-gap absorption edge caused by heating.
Effect of Si3N4 Addition on Oxidation Resistance of ZrB2-SiC Composites

Directory of Open Access Journals (Sweden)

Manab Mallik

2017-06-01

Full Text Available The oxidation behavior of ZrB2-20 vol % SiC and ZrB2-20 vol % SiC-5 vol % Si3N4 composites prepared by hot-pressing and subjected to isothermal exposure at 1200 or 1300 °C for durations of 24 or 100 h in air, as well as cyclic exposure at 1300 °C for 24 h, have been investigated. The oxidation resistance of the ZrB2-20 vol % SiC composite has been found to improve by around 20%–25% with addition of 5 vol % Si3N4 during isothermal or cyclic exposures at 1200 or 1300 °C. This improvement in oxidation resistance has been attributed to the formation of higher amounts of SiO2 and Si2N2O, as well as a greater amount of continuity in the oxide scale, because these phases assist in closing the pores and lower the severity of cracking by exhibiting self-healing type behavior. For both the composites, the mass changes are found to be higher during cyclic exposure at 1300 °C by about 2 times compared to that under isothermal conditions.
A comparative study on microstructure and tribological properties of Si3N4 and TiN thin films produced by IBED method

International Nuclear Information System (INIS)

Zhuang Daming; Liu Jiajun; Zhu Baoliang; Li Wenzhi; Zhang Xushou; Yang Shengrong

1995-01-01

In this paper, the tribological properties of Si 3 N 4 and TiN thin films produced by ion beam enhanced deposition (IBED) method were compared on an SRV friction and wear testing machine. In order to understand the reasons of their excellent properties the microstructure, microhardness and bonding strength with the substrate were analysed by SEM, X-ray diffraction, Knoop hardness test and scratching test methods separately. The results show that the TiN(1) films exhibits the best tribological properties, which are closely related with its higher hardness and bonding strength. (author)
Preparation and luminescence properties of Ce3+ and Ce3+/Tb(3+)-activated Y4Si2O7N2 phosphors.

Science.gov (United States)

Xia, Zhiguo; Wu, Weiwei

2013-09-28

Ce(3+) and Ce(3+)/Tb(3+)-activated Y4Si2O7N2 phosphors are synthesized by the solid-state method, which can be efficiently excited by near ultraviolet (UV) light emitting diode (LED) chips. The PL spectrum of Y4Si2O7N2:Ce(3+) shows a broad hump between 380 and 650 nm, assigned to the electron transition from the 4f energy level to different 5d sub levels of the Ce(3+) ions at different Y(3+) sites. The color of the Y4Si2O7N2:Ce(3+) phosphor can shift from blue to green by introducing Tb(3+). In addition, the energy transfer process from Ce(3+) to Tb(3+) in the Y4Si2O7N2 host was investigated and discussed in terms of both the luminescence spectra and decay curves. The energy transfer critical distance has been calculated and evaluated by the concentration quenching method. Therefore, the Ce(3+) and Ce(3+)/Tb(3+)-activated Y4Si2O7N2 phosphors can serve as key materials for phosphor-converted white-light UV-LEDs.
Growth of high mobility GaN and AlGaN/GaN high electron mobility transistor structures on 4H-SiC by ammonia molecular-beam epitaxy

International Nuclear Information System (INIS)

Webb, James B.; Tang, H.; Bardwell, J. A.; Coleridge, P.

2001-01-01

Ammonia molecular-beam epitaxy has been used to grow high-quality epilayers of GaN and AlGaN/GaN heterostructure field-effect transistor (HFET) structures on insulating 4H-SiC. The growth process, which used a magnetron sputter epitaxy deposited buffer layer of AlN, has been described previously. Ex situ pretreatment of the SiC substrate was found to be unnecessary. For a single 2.0 μm thick silicon doped epilayer, a room temperature (RT) electron mobility of 500 cm2/Vs was measured at a carrier density of 6.6x10 16 cm -3 . For the HFET structure, a room temperature mobility of 1300 cm2/Vs at a sheet carrier density of 3.3x10 12 cm -2 was observed, increasing to 11000 cm2/Vs at 77 K. The surface morphology of the layers indicated a coalesced mesa structure similar to what we observed for growth on sapphire, but with a lower overall defect density and correspondingly larger grain size. The observation of well-resolved Shubnikov de Haas oscillations at fields as low as 3 T indicated a relatively smooth interface. [copyright] 2001 American Institute of Physics
Low-temperature conducting channel switching in hybrid Fe{sub 3}O{sub 4}/SiO{sub 2}/n-Si structures

Energy Technology Data Exchange (ETDEWEB)

Vikulov, V.A., E-mail: vikulov@iacp.dvo.ru [Institute of Automation and Control Processes, FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Dimitriev, A.A.; Balashev, V.V.; Pisarenko, T.A.; Korobtsov, V.V. [Institute of Automation and Control Processes, FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation)

2016-09-15

Highlights: • Conducting channel switching between the polycrystalline Fe{sub 3}O{sub 4} film and the n-Si substrate takes place in the Fe{sub 3}O{sub 4}/SiO{sub 2}/n-Si structure at temperature below 125 K. • This effect occurs via the field-assisted tunneling through the composite insulating layer that consists of the highly resistive Fe{sub 3}O{sub 4} and the tunnel SiO{sub 2}. • The switching is attended by a change in the shape of the current-voltage characteristics from the linear at 300 K to the S-type at 80 K. - Abstract: The carrier transport properties of the polycrystalline magnetite (Fe{sub 3}O{sub 4}) films grown on an n-type Si substrate with 5 nm-thick SiO{sub 2} have been investigated between 80 and 300 K in current-in-plane geometry. It was established that at temperature decrease to about 120 K, the resistivity of thin Fe{sub 3}O{sub 4} films increases up to a peak value and then abruptly drops. This process is attended by a change in the shape of the current-voltage characteristics from the linear at 300 K to the S-type at 80 K. The observed peculiarities are explained by conducting channel switching from the Fe{sub 3}O{sub 4} film to the Si substrate via the field-assisted tunneling of carriers through the composite insulating layer consisting of highly resistive Fe{sub 3}O{sub 4} and tunnel SiO{sub 2}.
The evolution of amorphous grain boundaries during in-situ heating experiments in Lu-Mg doped Si3N4

International Nuclear Information System (INIS)

Bhattacharyya, Somnath; Subramaniam, Anandh; Koch, Christoph T.; Cannon, Rowland M.; Ruehle, Manfred

2006-01-01

The presence of 1-2 nm wide intergranular glassy films (IGFs) found in ceramics such as Si 3 N 4 and SiC strongly influences the properties of the material, including its fracture and creep behaviour. It is therefore important to know the evolution of the film as a function of temperature. Experiments, wherein liquid phase sintered Si 3 N 4 samples were quenched from high temperatures, have been carried out before and shown intriguing results. In the current investigation, in-situ heating experiments have been conducted in 120 kV and 400 kV microscopes, in order to separate beam irradiation from temperature effects. Based on the literature, it was expected that no changes would occur to the IGF below 1000 deg. C. However, it was surprising to note that the thickness measured at 950 deg. C was higher than that at room temperature. The correlation in trends observed in both microscopes shows that electron radiation has a minimal contribution to the change in IGF width at 950 deg. C. No change to the thickness was observed when heating up to 650 deg. C. After cooling back to room temperature there is a reduction in the thickness and thus a tendency to regain the original value of the thickness before heating. We conclude from these observations that certain material transport processes could be active at rather low temperatures (for Si 3 N 4 ). Possible mechanisms and sources of artifacts are also discussed
Silicon-incorporated diamond-like coatings for Si3N4 mechanical seals

International Nuclear Information System (INIS)

Camargo, S.S.; Gomes, J.R.; Carrapichano, J.M.; Silva, R.F.; Achete, C.A.

2005-01-01

Amorphous silicon carbide (a-SiC) and silicon-incorporated diamond-like carbon films (DLC-Si) were evaluated as protective and friction reduction coatings onto Si 3 N 4 rings. Unlubricated tribological tests were performed with a pin-on-disk apparatus against stainless steel pins with loads ranging from 3 to 55 N and sliding velocities from 0.2 to 1.0 m/s under ambient air and 50-60% relative humidity. At the lowest loads, a-SiC coatings present a considerable improvement with respect to the behavior of uncoated disks since the friction coefficient is reduced to about 0.2 and the system is able to run stably for thousands of meters. At higher loads, however, a-SiC coatings fail. DLC-Si-coated rings, on the other hand, presented for loads up to 10 N a steady-state friction coefficient below 0.1 and very low wear rates. The lowest steady-state mean friction coefficient value of only 0.055 was obtained with a sliding velocity of 0.5 m/s. For higher loads in the range of 20 N, the friction coefficient drops to values around 0.1 but no steady state is reached. For the highest loads of over 50 N, a catastrophic behavior is observed. Typically, wear rates below 5x10 -6 and 2x10 -7 mm 3 /N m were obtained for the ceramic rings and pins, respectively, with a load of 10 N and a sliding velocity of 0.5 m/s. Analysis of the steel pin contact surface by scanning electron microscopy (SEM)-energy dispersive X-ray spectrometry (EDS) and Auger spectroscopy revealed the formation of an adherent tribo-layer mainly composed by Si, C and O. The unique structure of DLC-Si films is thought to be responsible for the formation of the tribo-layer
Plasma spray formed near-net-shape MoSi2-Si3N4 bulk nanocomposites-structure property evaluation

International Nuclear Information System (INIS)

Hong, S.J.; Viswanathan, V.; Rea, K.; Patil, S.; Deshpande, S.; Georgieva, P.; McKechnie, T.; Seal, S.

2005-01-01

This article, for the first time, presents the challenges toward the successful consolidation of near-net-shape bulk MoSi 2 -Si 3 N 4 -SiC nanocomposite using plasma spray forming. A detailed characterization of the spray formed bulk nanocomponent has been performed using optical microscopy (OM), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and Vickers hardness testing. Vickers hardness (900 Hv) and fracture toughness (∼>5 MPa m 1/2 ) of the nanocomposite showed a little deviation from the expected, which might be due to the difference in the particle (Si 3 N 4 ) size and their distribution in the MoSi 2 matrix as a function of component thickness. Relatively higher hardness is attributed to the retention of the nanostructure in the composite. In addition, the as fabricated bulk nanocomposite showed enhanced oxidation resistance
Investigation of the fabrication processes of AlGaN/AlN/GaN HEMTs with in situ Si{sub 3}N{sub 4} passivation

Energy Technology Data Exchange (ETDEWEB)

Tomosh, K. N., E-mail: sky77781@mail.ru; Pavlov, A. Yu.; Pavlov, V. Yu.; Khabibullin, R. A.; Arutyunyan, S. S.; Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultra-High-Frequency Semiconductor Electronics (Russian Federation)

2016-10-15

The optimum mode of the in situ plasma-chemical etching of a Si{sub 3}N{sub 4} passivating layer in C{sub 3}F{sub 8}/O{sub 2} medium is chosen for the case of fabricating AlGaN/AlN/GaN HEMTs. It is found that a bias of 40–50 V at a high-frequency electrode provides anisotropic etching of the insulator through a resist mask and introduces no appreciable radiation-induced defects upon overetching of the insulator films in the region of gate-metallization formation. To estimate the effect of in situ Si{sub 3}N{sub 4} growth together with the heterostructure in one process on the AlGaN/AlN/GaN HEMT characteristics, transistors with gates without the insulator and with gates through Si{sub 3}N{sub 4} slits are fabricated. The highest drain current of the AlGaN/AlN/GaN HEMT at 0 V at the gate is shown to be 1.5 times higher in the presence of Si{sub 3}N{sub 4} than without it.
Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si{sub 3}N{sub 4}/DLC substrate

Energy Technology Data Exchange (ETDEWEB)

Roman, W S; Riascos, H [Grupo Plasma, Laser y Aplicaciones, Universidad Tecnologica de Pereira (Colombia); Caicedo, J C [Grupo de PelIculas Delgadas, Universidad del Valle, Cali (Colombia); Ospina, R [Laboratorio de Plasma, Universidad Nacional de Colombia, sede Manizales (Colombia); Tirado-MejIa, L, E-mail: hriascos@utp.edu.c [Laboratorio de Optoelectronica, Universidad del Quindio (Colombia)

2009-05-01

Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si{sub 3}N{sub 4} substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm{sup -2}, 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm{sup -1} for B - N bonding and bands around 1700 cm{sup -1} associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), alpha-Si{sub 3}N{sub 4} (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si{sub 3}N{sub 4}/DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.
Corrosion behavior of nanostructured Ni-Si{sub 3}N{sub 4} composite films: A study of electrochemical impedance spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Li, J.M.; Cai, C.; Xue, M.Z.; Liu, Y.G. [School of Chemistry and Chemical Technology, Shanghai Jiao Tong University, Shanghai (China); Yin, J.Y.; Zhang, Z. [Department of Chemistry, Zhejiang University, Hangzhou (China); Key Laboratory for Light Alloy Materials Technology, JiaXing (China); Li, J.F. [School of Materials Science and Engineering, Central South University, Changsha (China); Yang, J.F. [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University (China)

2012-07-15

Ni-Si{sub 3}N{sub 4} nanocomposite films with both the consecutive Ni crystallites and dispersed Si{sub 3}N{sub 4} particles in the nanometer range have been fabricated using DC electroplating technique, and characterized by scanning electron microscopy (SEM), transmission electron microscope (TEM), and X-ray diffraction (XRD). The corrosion resistance of the Ni-Si{sub 3}N{sub 4} nanocomposite film has been compared to that of pure Ni coating through polarization. Meanwhile, the corrosion process of Ni-Si{sub 3}N{sub 4} nanocomposite film in neutral 3.5% NaCl solution has been investigated using electrochemical impedance spectroscopy (EIS). The results show that the Ni-Si{sub 3}N{sub 4} nanocomposite film is more resistant to corrosion than the pure Ni coating. The corrosion of Ni-Si{sub 3}N{sub 4} nanocomposite film is controlled by electrochemical step, and the whole corrosion process is divided into two sequential stages. The main corrosion type of Ni-Si{sub 3}N{sub 4} nanocomposite films in neutral 3.5% NaCl solution is pitting. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Fabrication of Si3N4 thin films on phynox alloy substrates for electronic applications

Science.gov (United States)

Shankernath, V.; Naidu, K. Lakshun; Krishna, M. Ghanashyam; Padmanabhan, K. A.

2018-04-01

Thin films of Si3N4 are deposited on Phynox alloy substrates using radio frequency magnetron sputtering. The thickness of the films was varied between 80-150 nm by increasing the duration of deposition from 1 to 3 h at a fixed power density and working pressure. X-ray diffraction patterns reveal that the Si3N4 films had crystallized inspite of the substrates not being heated during deposition. This was confirmed using selected area electron diffraction and high resolution transmission electron microscopy also. It is postulated that a low lattice misfit between Si3N4 and Phynox provides energetically favourable conditions for ambient temperature crystallization. The hardness of the films is of the order of 6 to 9 GPa.

Decreased bacteria activity on Si3N4 surfaces compared with PEEK or titanium

Directory of Open Access Journals (Sweden)

Puckett S

2012-09-01

Full Text Available Deborah Gorth,1 Sabrina Puckett,1 Batur Ercan,1 Thomas J Webster,1 Mohamed Rahaman,2 B Sonny Bal31School of Engineering and Department of Orthopaedics, Brown University, Providence, RI, 2Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO, 3Department of Orthopaedic Surgery, School of Medicine, University of Missouri, Columbia, MO, USAAbstract: A significant need exists for orthopedic implants that can intrinsically resist bacterial colonization. In this study, three biomaterials that are used in spinal implants – titanium (Ti, poly-ether-ether-ketone (PEEK, and silicon nitride (Si3N4 – were tested to understand their respective susceptibility to bacterial infection with Staphylococcus epidermidis, Staphlococcus aureus, Pseudomonas aeruginosa, Escherichia coli and Enterococcus. Specifically, the surface chemistry, wettability, and nanostructured topography of respective biomaterials, and the effects on bacterial biofilm formation, colonization, and growth were investigated. Ti and PEEK were received with as-machined surfaces; both materials are hydrophobic, with net negative surface charges. Two surface finishes of Si3N4 were examined: as-fired and polished. In contrast to Ti and PEEK, the surface of Si3N4 is hydrophilic, with a net positive charge. A decreased biofilm formation was found, as well as fewer live bacteria on both the as-fired and polished Si3N4. These differences may reflect differential surface chemistry and surface nanostructure properties between the biomaterials tested. Because protein adsorption on material surfaces affects bacterial adhesion, the adsorption of fibronectin, vitronectin, and laminin on Ti, PEEK, and Si3N4 were also examined. Significantly greater amounts of these proteins adhered to Si3N4 than to Ti or PEEK. The findings of this study suggest that surface properties of biomaterials lead to differential adsorption of physiologic proteins, and that this
Microstructure and properties of thick nanocomposite TiN/Si{sub 3}N{sub 4} coatings on Vanadis 23 HS steel

Energy Technology Data Exchange (ETDEWEB)

Moskalewicz, Tomasz; Czyrska-Filemonowicz, Aleksandra [AGH Univ. of Science and Technology, Faculty of Metals Engineering and Industrial Computer Science, Krakow (Poland); Zimowski, Slawomir [AGH Univ. of Science and Technology, Faculty of Mechanical Engineering and Robotics, Krakow (Poland); Wendler, Bogdan; Progalskiy, Ivan [Lodz Univ. of Technology (Poland). Inst. of Materials Science and Engineering

2015-07-15

The microstructure and selected micro-mechanical properties of a 13.4 μm thick nanocomposite TiN/Si{sub 3}N{sub 4} coating deposited onto Vanadis 23 HS steel by a new gas pulsed magnetron sputtering technique were investigated. Scanning and transmission electron microscopy were employed to investigate the detailed microstructure of the coating. It was found that the coating exhibited a fully nanocrystalline structure and was composed of two zones: the outer zone with columnar structure and the inner one with equiaxed, fine columnar structure. Both zones consisted mainly of the δ-TiN nanocrystallites with a small amount of α-Si{sub 3}N{sub 4} and β-Si{sub 3}N{sub 4}. In order to increase coating adhesion to the substrate, a graded intermediate layer consisting of three different phases (pure Cr, CrN and Cr2N) was applied. The hardness of the as-deposited TiN/Si{sub 3}N{sub 4} coating was equal to 48 GPa, whereas it was equal to 40 GPa after annealing. The coatings exhibited very good adhesion to the underlying steel substrate.
Structural and electrical characterization of ion beam synthesized and n-doped SiC layers

Energy Technology Data Exchange (ETDEWEB)

Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J.R. [Barcelona Univ. (Spain). Dept. Electronica; Panknin, D.; Koegler, R.; Skorupa, W. [Forschungszentrum Rossendorf, Dresden (Germany); Esteve, J.; Acero, M.C. [CSIC, Bellaterra (Spain). Centre Nacional de Microelectronica

2001-07-01

This work reports preliminary data on the ion beam synthesis of n-doped SiC layers. For this, two approaches have been studied: (i) doping by ion implantation (with N{sup +}) of ion beam synthesized SiC layers and (ii) ion beam synthesis of SiC in previously doped (with P) Si wafers. In the first case, the electrical data show a p-type overcompensation of the SiC layer in the range of temperatures between -50 C and 125 C. The structural (XRD) and in-depth (SIMS, Spreading Resistance) analysis of the samples suggest this overcompensation to be induced by p-type active defects related to the N{sup +} ion implantation damage, and therefore the need for further optimization their thermal processing. In contrast, the P-doped SiC layers always show n-type doping. This is also accompanied by a higher structural quality, being the spectral features of the layers similar to those from the not doped material. Electrical activation of P in the SiC lattice is about one order of magnitude lower than in Si. These data constitute, to our knowledge, the first results reported on the doping of ion beam synthesized SiC layers. (orig.)
Threshold stoichiometry for beam induced nitrogen depletion of SiN

International Nuclear Information System (INIS)

Timmers, H.; Weijers, T.D.M.; Elliman, R.G.; Uribasterra, J.; Whitlow, H.J.; Sarwe, E.-L.

2002-01-01

Measurements of the stoichiometry of silicon nitride films as a function of the number of incident ions using heavy ion elastic recoil detection (ERD) show that beam-induced nitrogen depletion depends on the projectile species, the beam energy, and the initial stoichiometry. A threshold stoichiometry exists in the range 1.3>N/Si≥1, below which the films are stable against nitrogen depletion. Above this threshold, depletion is essentially linear with incident fluence. The depletion rate correlates non-linearly with the electronic energy loss of the projectile ion in the film. Sufficiently long exposure of nitrogen-rich films renders the mechanism, which prevents depletion of nitrogen-poor films, ineffective. Compromising depth-resolution, nitrogen depletion from SiN films during ERD analysis can be reduced significantly by using projectile beams with low atomic numbers
Mechanical Properties and Thermal Shock Resistance Analysis of BNNT/Si3N4 Composites

Science.gov (United States)

Wang, Shouren; Wang, Gaoqi; Wen, Daosheng; Yang, Xuefeng; Yang, Liying; Guo, Peiquan

2018-04-01

BNNT/Si3N4 ceramic composites with different weight amount of BNNT fabricated by hot isostatic pressing were introduced. The mechanical properties and thermal shock resistance of the composites were investigated. The results showed that BNNT-added ceramic composites have a finer and more uniform microstructure than that of BNNT-free Si3N4 ceramic because of the retarding effect of BNNT on Si3N4 grain growth. The addition of 1.5 wt.% BNNT results in simultaneous increase in flexural strength, fracture toughness, and thermal shock resistance. The analysis of the results indicates that BNNT brings many thermal transport channels in the microstructure, increasing the efficiency of thermal transport, therefore results in increase of thermal shock resistance. In addition, BNNT improves the residual flexural strength of composites by crack deflection, bridging, branching and pinning, which increase the crack propagation resistance.
Gold-coated iron nanoparticles in transparent Si3N4 matrix thin films

Science.gov (United States)

Sánchez-Marcos, J.; Céspedes, E.; Jiménez-Villacorta, F.; Muñoz-Martín, A.; Prieto, C.

2013-06-01

A new method to prepare thin films containing gold-coated iron nanoparticles is presented. The ternary Fe-Au-Si3N4 system prepared by sequential sputtering has revealed a progressive variation of microstructures from Au/Fe/Au/Si3N4 multilayers to iron nanoparticles. Microstructural characterization by transmission electron microscopy, analysis of the magnetic properties and probing of the iron short-range order by X-ray absorption spectroscopy confirm the existence of a gold-coated iron nanoparticles of 1-2 nm typical size for a specific range of iron and gold contents per layer in the transparent silicon nitride ceramic matrix.
Microstructure, mechanical and tribological performance of hybrid A359/(SiC + Si3N4) composites for automotive applications

Science.gov (United States)

Shalaby, Essam A. M.; Churyumov, Alexander Yu

2017-11-01

In this study, microstructure analysis, yield strength at high temperatures and wear rate of hybrid A359/(SiC + Si3N4) composites were investigated. Different weight percent of (SiC + Si3N4) particles were introduced to synthesis the composites using stir/squeeze process. XRD, SEM, TEM and EDS were utilized to investigate the distribution of particles throughout the matrix, and the interfacial reaction at matrix/particle interface. It confirmed the existence of MgAl2O4 which enhances the wettability between the particles and the matrix, and the absence of particle agglomeration. The (SiC + Si3N4) addition not only enhances the hardness measurements but also leads to a reduction in the dendritic arm spacing (DAS). Moreover, it develops the wear performance and the yield strength at high temperatures. The developed composites provide a promising material suitable for automotive industries.
LiCa{sub 4}Si{sub 4}N{sub 8}F and LiSr{sub 4}Si{sub 4}N{sub 8}F. Nitridosilicate fluorides with a BCT-zeolite-type network structure

Energy Technology Data Exchange (ETDEWEB)

Horky, Katrin; Schnick, Wolfgang [Department of Chemistry, Inorganic Solid-State, Chemistry, University of Munich (LMU), Butenandtstrasse 5-13, 81377, Munich (Germany)

2017-02-17

LiCa{sub 4}Si{sub 4}N{sub 8}F and LiSr{sub 4}Si{sub 4}N{sub 8}F were synthesized from Si{sub 3}N{sub 4}, LiNH{sub 2}, CaH{sub 2}/SrH{sub 2}, and LiF through a metathesis reaction in a radiofrequency furnace. The crystal structures of both compounds were solved and refined on the basis of single-crystal X-ray diffraction data [LiCa{sub 4}Si{sub 4}N{sub 8}F: P2{sub 1}/c (no. 14), a = 10.5108(3), b = 9.0217(3), c = 10.3574(3) Aa, β = 117.0152(10) , R{sub 1} = 0.0422, wR{sub 2} = 0.0724, Z = 4; LiSr{sub 4}Si{sub 4}N{sub 8}F: P4nc (no. 104), a = 9.3118(4), b = 9.3118(4), c = 5.5216(2) Aa, R{sub 1} = 0.0160, wR{sub 2} = 0.0388, Z = 2]. The silicate substructure of both compounds is built up of vertex-sharing SiN{sub 4} tetrahedra, thereby forming a structure analogous to the BCT zeolite with Ca{sup 2+}/Sr{sup 2+}, Li{sup +}, and F{sup -} ions filling the voids. The crystal structure of LiSr{sub 4}Si{sub 4}N{sub 8}F is homeotypic with that of Li{sub 2}Sr{sub 4}Si{sub 4}N{sub 8}O as it exhibits the same zeolite-type [SiN{sub 2}]{sup 2-} framework, but incorporates LiF instead of Li{sub 2}O. In contrast to the respective Sr compound, LiCa{sub 4}Si{sub 4}N{sub 8}F shows a distortion of the BCT-zeolite-type network as well as an additional site for F. Both F sites in LiCa{sub 4}Si{sub 4}N{sub 8}F exhibit different coordination spheres to LiSr{sub 4}Si{sub 4}N{sub 8}F. The title compounds are the first reported lithium alkaline-earth nitridosilicates containing fluorine. The crystal structures were confirmed by lattice-energy calculations (MAPLE), energy-dispersive X-ray spectroscopy (EDX) measurements, and powder X-ray diffraction. IR spectra confirmed the absence of N-H bonds. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
In situ synthesis and properties of self-reinforced Si3N4–SiO2 ...

Indian Academy of Sciences (India)

reinforced glass–ceramic composites were obtained without any β -Si 3 N 4 seed crystal. These composites with different compositions were prepared in a nitrogenatmosphere for comparison of phase transformation and mechanical properties.
The Growth of GaN on Si by the Beam Flux Modulation

International Nuclear Information System (INIS)

Roh, C. H.; Ha, M. W.; Song, H. J.; Choi, H. G.; Lee, J. H.; Ra, Y. W.; Hahn, C. K.

2011-01-01

AlGaN/GaN HEMT structure was grown on Si (111) substrate by plasma-assisted molecular beam epitaxy (PA-MBE) using a beam flux modulation methods. In this result, it was verified that the propagation of treading dislocation (TD) due to N-rich GaN layer was effectively suppressed.
Surface texturing of Si3N4–SiC ceramic tool components by pulsed laser machining

CSIR Research Space (South Africa)

Tshabalala, LC

2016-03-01

Full Text Available texturing of Si(sub3)N(sub4)–SiC composites in the fabrication of machining tool inserts for various tribological applications. The samples were machined at varied laser energy (0.1–0.6 mJ) and lateral pulse overlap (50–88%) in order to generate a sequence...
Development and characterisation of Ni-Si3N4 nanocomposites

International Nuclear Information System (INIS)

R, Mohan Reddy; M, Praveen B.; M, Praveen C.; V, Venkatesha T.; Kumar N B, Rithin

2015-01-01

Nickel–Si 3 N 4 composites were generated by means of pulse-reverse (PR) electrodeposition technique. The corrosion rate was calculated for the composites by electrochemical methods such as polarisation and impedance methods. Composites were characterised by scanning electron microscope (SEM) and X-ray diffractometer (XRD) to evaluate their microstructures. Coatings obtained by PR method shows more corrosion resistance than DC generated coatings
Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode

Science.gov (United States)

Yigiterol, F.; Güllü, H. H.; Bayraklı, Ö.; Yıldız, D. E.

2018-03-01

Electrical characteristics of the Au/Si3N4/4H n-SiC metal-insulator-semiconductor (MIS) diode were investigated under the temperature, T , interval of 160-400 K using current-voltage (I-V), capacitance-voltage ( C {-} V ) and conductance-voltage ( G/ω {-} V ) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height ( Φ_{B0} ) and ideality factor ( n ) were calculated according to the thermionic emission (TE) from forward bias I-V analysis in the whole working T . Experimental results showed that the values of Φ_{B0} were in increasing behavior with increasing T while n values decreased with inverse proportionality in n versus Φ_{{{{B}}0}} plot. Therefore, the non-ideal I-V behavior with inhomogeneous barrier height (BH) formation has been discussed under the assumption of Gaussian distribution (GD). From the GD of BHs, the mean BH was found to be about 1.40 eV with 0.1697 standard deviation and the modified Richardson constant A^{*} of this diode was obtained as 141.65 A/cm2 K2 in good agreement with the literature (the theoretical value of A^{*} is 137.21 A/cm2 K2). The relationship between Φ_{B0} and n showed an abnormal I-V behavior depending on T , and it was modeled by TE theory with GD of BH due to the effect in inhomogeneous BH at the interface. Secondly, according to Cheung's model, series resistance, R_{{S}} values were calculated in the T range of 160-400 K and these values were found to decrease with increasing T . Finally, the density of interface states, D_{{it}} was calculated and the T dependence of energy distribution of D_{{it}} profiles determined the forward I {-} V measurements by taking into account the bias dependence of the effective BH, Φ_{{e}} and n . D_{{it}} were also calculated according to the Hill-Coleman method from C {-} V and G/ω {-} V analysis. Furthermore, the variation of D_{{it}} as a function of frequency, f and T were determined.
Development and characterization of Si3N4 coated AlCrN ceramic cutting tool

International Nuclear Information System (INIS)

Souza, J.V.C.; Nono, M.C.A.; Martins, G.V.; Machado, J.P.B.; Silva, O.M.M.

2009-01-01

Nowadays, silicon nitride based cutting tools are used to machine cast iron from the automotive industry and nickel superalloys from the aero industries. Advances in manufacturing technologies (increased cutting speeds, dry machining, etc.) induced the fast commercial growth of physical vapor deposition (PVD) coatings for cutting tools, in order to increase their life time. In this work, a new composition of the Si 3 N 4 ceramic cutting tool was developed, characterized and subsequently coated, using a PVD process, with aluminum chromium nitride (AlCrN). The Si 3 N 4 substrate properties were analyzed by XRD, AFM, hardness and fracture toughness. The AlCrN coating was analyzed by AFM, grazing incidence X-ray diffraction (GIXRD) and hardness. The results showed that this PVD coating could be formed homogeneously, without cracks and promoted a higher surface hardness to the insert and consequently it can produce a better wear resistance during its application on high speed machining. (author)
Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers

Science.gov (United States)

Bahariqushchi, R.; Gundogdu, Sinan; Aydinli, A.

2017-04-01

Multilayers of germanium nanocrystals (NCs) embedded in thin films of silicon nitride matrix separated with SiO2 barriers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). SiGeN/SiO2 alternating bilayers have been grown on quartz and Si substrates followed by post annealing in Ar ambient from 600 to 900 °C. High resolution transmission electron microscopy (HRTEM) as well as Raman spectroscopy show good crystallinity of Ge confined to SiGeN layers in samples annealed at 900 °C. Strong compressive stress for SiGeN/SiO2 structures were observed through Raman spectroscopy. Size, as well as NC-NC distance were controlled along the growth direction for multilayer samples by varying the thickness of bilayers. Visible photoluminescence (PL) at 2.3 and 3.1 eV with NC size dependent intensity is observed and possible origin of PL is discussed.
Rare-earth element doped Si3N4/SiC micro/nano-composites-RT and HT mechanical properties

Czech Academy of Sciences Publication Activity Database

Lojanová, Š.; Tatarko, P.; Chlup, Zdeněk; Hnatko, M.; Dusza, J.; Lenčéš, Z.; Šajgalík, P.

2010-01-01

Roč. 30, č. 9 (2010), s. 1931-1944 ISSN 0955-2219 Institutional research plan: CEZ:AV0Z20410507 Keywords : Si3N4 * SiC * Nano-composites * Fracture toughness * Hardness * Strength * Creep Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass Impact factor: 2.574, year: 2010
Intergranular phase of the Si3 N4 hot pressed with Mg O/Y2 O3

International Nuclear Information System (INIS)

Costa, Celio A.; Todd, Judith A.

1997-01-01

Monolithic and composite Si 3 N 4 hot-pressed with 3% Mgo or 6% Y 2 O 3 were analyzed with X-ray diffraction and transmission electron microscopy. The results showed materials to be composed of β-Si 3 N 4 grains and an intergranular phase which was partially crystalline and partially amorphous. For the materials sintered with Mg O, the identification of the intergranular phase was not conclusive. For the materials sintered with Y 2 O 3 . It was observed that the amount of intergranular crystalline phase decreased as whiskers were added to the material and the intergranular crystalline part had a crystallographic structure similar to yttrium-silicon-oxide-nitride family. (author)
Enhancement of photoluminescence properties and modification of crystal structures of Si{sub 3}N{sub 4} doping Li{sub 2}Sr{sub 0.995}SiO{sub 4}:0.005Eu{sup 2+} phosphors

Energy Technology Data Exchange (ETDEWEB)

Song, Kaixin, E-mail: kxsong@hdu.edu.cn [College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Zhang, Fangfang [College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Chen, Daqin [College of Materials Sciences and Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Wu, Song; Zheng, Peng [College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Huang, Qingming [Instrument Analysis and Testing Center, Fuzhou University, Fuzhou 350002 (China); Jiang, Jun [Ningbo Institute of Materials Technologies and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Xu, Junming; Qin, Huibin [College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China)

2015-10-15

Highlights: • Si{sub 3}N{sub 4} modified Li{sub 2}Sr{sub 0.995}SiO{sub 4}:0.005Eu{sup 2+} phosphors were prepared. • The luminescence intensity of Li{sub 2}Sr{sub 0.995}SiO{sub 4}:Eu{sup 2+} was enhanced by doping Si{sub 3}N{sub 4}. • The fluorescence decay times and thermal stability were enhanced by doping Si{sub 3}N{sub 4}. - Abstract: Si{sub 3}N{sub 4} modified Li{sub 2}Sr{sub 0.995}SiO{sub 4}:0.005Eu{sup 2+} (Li{sub 2}Sr{sub 0.995}SiO{sub 4−3x/2}N{sub x}:0.005Eu{sup 2+}) phosphors were synthesized with the conventional solid-state reaction in the reduced atmosphere. The crystal structure and vibrational modes were analyzed by X-ray diffraction, Raman scattering spectroscopy and Rietveld crystal structure refinement. Photoluminescence (PL) and photoluminescence excitation (PLE) spectra showed that Li{sub 2}Sr{sub 0.995}SiO{sub 4−3x/2}N{sub x}:0.005Eu{sup 2+} powder exhibited a broad yellow emission band centered at 560 nm under the excitation of 460 nm visible light, due to the 4f{sup 6}5d{sup 1} → 4f{sup 7} transition of Eu{sup 2+}. The partial nitridation of Li{sub 2}Sr{sub 0.995}SiO{sub 4−3x/2}N{sub x}:0.005Eu{sup 2+} (x = 0.01) phosphors led to a large enhancement in the luminescence intensity, as much as 190%. At the same time, the fluorescence decay behavior curves further showed that the photoluminescence efficiencies of Li{sub 2}Sr{sub 0.995}SiO{sub 4−3x/2}N{sub x}:0.005Eu{sup 2+} phosphors were enhanced by addition of Si{sub 3}N{sub 4}. The temperature quenching characteristics confirmed that the oxynitride based Li{sub 2}Sr{sub 0.995}SiO{sub 4−3x/2}N{sub x}:0.005Eu{sup 2+} showed slightly higher stability. It is implied that Li{sub 2}Sr{sub 0.995}SiO{sub 4−3x/2}N{sub x}:0.005Eu{sup 2+} phosphors had a possible potential application on white LEDs to match blue light chips.
Influence of carbon on structure stability, mechanical and tribological properties of β-Si3(Cx,N1‑x)4 silicon carbonitride

Science.gov (United States)

Zhong, Jing; Hua, Guomin; Chen, Linbo; Li, Changsheng; Yang, Jianhong; Cheng, Xiaonong

2018-05-01

In this study, β-Si3(Cx,N1‑x)4 Silicon Carbonitride was prepared by Self-Propagation High-Temperature Synthesis (SHS). And the influence of carbon on structure stability, mechanical and tribological properties of β-Si3(Cx,N1‑x)4 were investigated. The results showed that the solubility of carbon in β-Si3(Cx,N1‑x)4 was about 10 wt%, beyond which cubic-SiC segregated out of β-Si3(Cx,N1‑x)4 to form β-Si3N4/cubic-SiC composite. Regarding influences of carbon concentration on mechanical properties, the hardness of β-Si3(Cx,N1‑x)4 decreased from 1400 Hv to 1200 Hv with the increase of carbon concentration. Whereas, the fracture toughness of β-Si3(Cx,N1‑x)4 increased from 6.5 MPa · m0.5 to 7.6 MPa · m0.5 with the increase of carbon concentration. The tribological property studies revealed the anti-wear performance of β-Si3(Cx,N1‑x)4 was enhanced by the increase of carbon concentration. The dominated wear mechanism could be attributed to the abrasive wear by fracture.
Light coupling and distribution for Si3N4/SiO2 integrated multichannel single-mode sensing system

Science.gov (United States)

Kaźmierczak, Andrzej; Dortu, Fabian; Schrevens, Olivier; Giannone, Domenico; Bouville, David; Cassan, Eric; Gylfason, Kristinn B.; Sohlström, Hans; Sanchez, Benito; Griol, Amadeu; Hill, Daniel

2009-01-01

We present an efficient and highly alignment-tolerant light coupling and distribution system for a multichannel Si3N4/SiO2 single-mode photonics sensing chip. The design of the input and output couplers and the distribution splitters is discussed. Examples of multichannel data obtained with the system are given.

Modified Wagner model for the active-to-passive transition in the oxidation of Si3N4

International Nuclear Information System (INIS)

Wang Junjie; Zhang Litong; Zeng Qingfeng; Cheng Laifei; Xu Yongdong

2008-01-01

Si 3 N 4 is used as the coating material of space shuttle structures which receive very high thermal fluxes during the atmospheric re-entry phase. Two main regimes govern the oxidation of Si 3 N 4 : the passive oxidation, with the formation of a protective silica layer leading generally to a mass gain, and the active oxidation, with vaporization of SiO leading to a mass loss of the sample. To ensure that silicon nitride will efficiently protect a material in given oxidizing environments, its own oxidation behaviour must be previously known. Therefore, the active-to-passive transition of Si 3 N 4 oxidation is a problem of deep scientific importance and of wide technological relevance. In this paper, a modified Wager model for the active-to-passive transition in the oxidation of Si 3 N 4 is presented, which includes the non-equilibrium effects caused by the mass transfer. The present theoretical calculations satisfactorily explained the reported experimental and theoretical data. The influence of flow rate on the active-to-passive transition boundary has been explained using our model. The rate controlling mechanism of the oxidation at the active-to-passive transition point is proposed
Effects of surface passivation on α-Si_3N_4 nanobelts: A first-principles study

International Nuclear Information System (INIS)

Xiong, Li; Dai, Jianhong; Song, Yan; Wen, Guangwu; Qin, Chunlin

2016-01-01

Highlights: • The stability and electronic properties of α-Si_3N_4 nanobelts are theoretically studied. • The surface of α-Si_3N_4 nanobelts are passivated with H, OH, F and Cl atoms. • The structural stability of nanobelts decreases in the order of OH, F, Cl, and H passivations. • The surface passivation greatly changes the electronic structures of α-Si_3N_4 nanobelts. - Abstract: The energetic stability and electronic structures of H, OH, F, or Cl passivated α-Si_3N_4 nanobelts orientating along various directions are systematically investigated via first-principles calculations. The results show that the stability of nanobelts is more sensitive to the surface passivation than growth direction. It decreases in the order of (100% OH), (50% H, 50% OH), (50% H, 50% F), (100% F), (50% H, 50% Cl), (100% Cl), (100% H), and unpassivation. H atoms prefer to bond with surface N atoms of nanobelts, while OH, F and Cl prefer to bond with Si atoms of nanobelts. In addition, the surface passivation greatly changes the electronic structures of nanobelts. The OH and F passivations result in the larger band gaps than the Cl passivation. While the coverage of OH, F or Cl increases to 100%, their band gaps decrease significantly, indicating an improvement of electrical properties, which is good agreement with the experimental findings. The 100% Cl-passivated nanobelt orientating along the [011] direction possesses the smallest band gap of 1.038 eV. The band gaps are found to be affected by a competition between quantum confinement effect and the role of the surface passivated groups or atoms at the band-gap edges.
Functionalization of Fe3O4/SiO2 with N-(2-Aminoethyl-3-aminopropyl for Sorption of [AuCl4]-

Directory of Open Access Journals (Sweden)

Nuryono Nuryono

2016-08-01

Full Text Available Synthesis of Fe3O4/SiO2 modified with N-(2-aminoethyl-3-aminopropyl group (Fe3O4/SiO2/ED via coating method and its application for adsorption-desorption of anionic gold in aqueous solution have been conducted. The synthesized product was characterized with an X-ray diffractometer (XRD, a Fourier transform infrared (FT-IR spectrophotometer and a transmission electron microscopy (TEM. Adsorption of Au(III was conducted in a batch system and the variables included pH, contact time, and initial concentration were investigated. Results showed that magnetite/silica has been successfully functionalized with N-(2-aminoethyl-3-aminopropyl in a homogeneous system. Kinetics study showed that adsorption of Au(III followed the pseudo-second order model with rate constant of 0.710 g mmol L-1min-1. Furthermore, the experimental data fitted well with the Langmuir isotherm model with the maximum adsorption capacity for Au(III of 142.9 mg g-1 and the energy of 25.0 kJ mol-1. Gold loaded on the Fe3O4/SiO2/ED could be easily desorbed with 0.2 mol L-1 HCl containing 2 wt.% of thiourea with recovery of 99.8%. Fe3O4/SiO2/ED was reusable and stable in 5 cycles of adsorption-desorption with recovery more than 90%. Fe3O4/SiO2/ED showed high selectivity towards Au(III in the multimetal system Au(III/Cu(II/Cr(VI with the coefficient selectivity for αAu-Cu of 227.5and for αAu-Cr of 12.3.
A novel yellow-emitting SrAlSi4N7:Ce3+ phosphor for solid state lighting: Synthesis, electronic structure and photoluminescence properties

Science.gov (United States)

Ruan, Jian; Xie, Rong-Jun; Funahashi, Shiro; Tanaka, Yoshinori; Takeda, Takashi; Suehiro, Takayuki; Hirosaki, Naoto; Li, Yuan-Qiang

2013-12-01

Ce3+-doped and Ce3+/Li+-codoped SrAlSi4N7 phosphors were synthesized by gas pressure sintering of powder mixtures of Sr3N2, AlN, α-Si3N4, CeN and Li3N. The phase purity, electronic crystal structure, photoluminescence properties of SrAlSi4N7:Ce3+(Ce3+/Li+) were investigated in this work. The band structure calculated by the DMol3 code shows that SrAlSi4N7 has a direct band gap of 3.87 eV. The single crystal analysis of Ce3+-doped SrAlSi4N7 indicates a disordered Si/Al distribution and nitrogen vacnacy defects. SrAlSi4N7 was identified as a major phase of the fired powders, and Sr5Al5Si21N35O2 and AlN as minor phases. Both Ce3+ and Ce3+/Li+ doped SrAlSi4N7 phosphors can be efficiently excited by near-UV or blue light and show a broadband yellow emission peaking around 565 nm. A highest external quantum efficiency of 38.3% under the 450 nm excitation was observed for the Ce3+/Li+-doped SrAlSi4N7 (5 mol%). A white light LED lamp with color temperature of 6300 K and color rendering index of Ra=78 was achieved by combining Sr0.97Al1.03Si3.997N\\94\\maccounttest14=t0005_18193 7:Ce3+0.03 with a commercial blue InGaN chip. It indicates that SrAlSi4N7:Ce3+ is a promising yellow emitting down-conversion phosphor for white LEDs.
Enhanced visible light photocatalytic H{sub 2} evolution of metal-free g-C{sub 3}N{sub 4}/SiC heterostructured photocatalysts

Energy Technology Data Exchange (ETDEWEB)

Wang, Biao, E-mail: wangbiao@fjirsm.ac.cn [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); University of the Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Jingtao, E-mail: zhangjtao@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510006 (China); Huang, Feng, E-mail: huangfeng@mail.sysu.edu.cn [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510006 (China)

2017-01-01

Highlights: • Novel g-C{sub 3}N{sub 4}/SiC composite was prepared by synthesizing g-C{sub 3}N{sub 4} on the surface of SiC. • g-C{sub 3}N{sub 4}/SiC composites exhibit much higher H{sub 2} production activity than pure g-C{sub 3}N{sub 4}. • The g-C{sub 3}N{sub 4}/SiC heterojunction mainly accounts for improved photocatalytic activity. - Abstract: g-C{sub 3}N{sub 4} has been attracting much attention for application in visible light photocatalytic water splitting due to its suitable band structure, and high thermal and chemical stability. However, the rapid recombination of photogenerated carriers has inhibited its wide use. For this reason, novel g-C{sub 3}N{sub 4}/SiC composites were prepared via in situ synthesis of g-C{sub 3}N{sub 4} on the surface of SiC, with which g-C{sub 3}N{sub 4} shows tight interaction (chemical bonding). The g-C{sub 3}N{sub 4}/SiC composites exhibit high stability in H{sub 2} production under irradiation with visible light (λ ≥ 420 nm), demonstrating a maximum of 182 μmol g{sup −1} h{sup −1}, being 3.4 times higher than that of pure g-C{sub 3}N{sub 4}. The enhanced photocatalytic H{sub 2} production ability for g-C{sub 3}N{sub 4}/SiC photocatalysts is primarily ascribed to the combined effects of enhanced separation of photogenerated carriers through efficient migration of electron and enlarged surface areas, in addition to the possible contributions of increased hydrophilicity of SiC and polymerization degree of g-C{sub 3}N{sub 4}. This study may provide new insights into the development of g-C{sub 3}N{sub 4}-based composites as stable and efficient photocatalysts for H{sub 2} production from water splitting.
A novel yellow-emitting SrAlSi4N7:Ce3+ phosphor for solid state lighting: Synthesis, electronic structure and photoluminescence properties

International Nuclear Information System (INIS)

Ruan, Jian; Xie, Rong-Jun; Funahashi, Shiro; Tanaka, Yoshinori; Takeda, Takashi; Suehiro, Takayuki; Hirosaki, Naoto; Li, Yuan-Qiang

2013-01-01

Ce 3+ -doped and Ce 3+ /Li + -codoped SrAlSi 4 N 7 phosphors were synthesized by gas pressure sintering of powder mixtures of Sr 3 N 2 , AlN, α-Si 3 N 4 , CeN and Li 3 N. The phase purity, electronic crystal structure, photoluminescence properties of SrAlSi 4 N 7 :Ce 3+ (Ce 3+ /Li + ) were investigated in this work. The band structure calculated by the DMol 3 code shows that SrAlSi 4 N 7 has a direct band gap of 3.87 eV. The single crystal analysis of Ce 3+ -doped SrAlSi 4 N 7 indicates a disordered Si/Al distribution and nitrogen vacnacy defects. SrAlSi 4 N 7 was identified as a major phase of the fired powders, and Sr 5 Al 5 Si 21 N 35 O 2 and AlN as minor phases. Both Ce 3+ and Ce 3+ /Li + doped SrAlSi 4 N 7 phosphors can be efficiently excited by near-UV or blue light and show a broadband yellow emission peaking around 565 nm. A highest external quantum efficiency of 38.3% under the 450 nm excitation was observed for the Ce 3+ /Li + -doped SrAlSi 4 N 7 (5 mol%). A white light LED lamp with color temperature of 6300 K and color rendering index of Ra=78 was achieved by combining Sr 0.97 Al 1.03 Si 3.997 N/94/maccounttest14=t0005 1 8193 7 :Ce 3+ 0.03 with a commercial blue InGaN chip. It indicates that SrAlSi 4 N 7 :Ce 3+ is a promising yellow emitting down-conversion phosphor for white LEDs. - Graphical abstract: One-phosphor converted white light-emitting diode (LED) was fabricated by combining a blue LED chip and a yellow-emitting SrAlSi4N7:Ce 3+ phosphor (see inset), which has the color rendering index of 78 and color temperature of 6300 K. - Highlights: • We reported a new yellow nitride phosphor suitable for solid state lighting. • We solved the crystal structure and evidenced a disordered Si/Al distribution. • We fabricated a high color rendering white LEDs by using a single SrAlSi4N7:Ce
The role of Si as surfactant and donor in molecular-beam epitaxy of AlN

International Nuclear Information System (INIS)

Lebedev, V.; Morales, F.M.; Romanus, H.; Krischok, S.; Ecke, G.; Cimalla, V.; Himmerlich, M.; Stauden, T.; Cengher, D.; Ambacher, O.

2005-01-01

The growth of Si-doped AlN(0001) thin films on Al 2 O 3 (0001) substrates by plasma-induced molecular-beam epitaxy is reported. We have found that Si positively affects the epitaxy being an effective surfactant for AlN growth with a remarkable impact on the crystal quality. It was proven that the characteristic surface reconstruction sequences frequently related to the Al adatoms are obviously Si induced on AlN(0001) surfaces. It was also observed that heavy doping conditions result in volume segregation of Si on the threading dislocation network and in the formation of an amorphous (AlO)(SiO)N cap layer caused by surface oxidation of the accumulated Al and segregated Si. The electron affinity was measured to be smaller than 0.5 eV on the clean AlN surface after removing of the cap layer using Ar + sputtering
Surface texturing of Si3N4–SiC ceramic tool components by pulsed laser machining

CSIR Research Space (South Africa)

Tshabalala, LC

2016-03-01

Full Text Available Traditional abrasive techniques such as grinding and lapping have long been used in the surface conditioning of engineering materials. However, in the processing of hard and brittle materials like silicon nitride (Si(sub3)N(sub4)), machining...
Computer Aided Multi-scale Design of SiC-Si3N4 Nanoceramic Composites for High-Temperature Structural Applications

Energy Technology Data Exchange (ETDEWEB)

Vikas Tomer; John Renaud

2010-08-31

It is estimated that by using better and improved high temperature structural materials, the power generation efficiency of the power plants can be increased by 15% resulting in significant cost savings. One such promising material system for future high-temperature structural applications in power plants is Silicon Carbide-Silicon Nitride (SiC-Si{sub 3}N{sub 4}) nanoceramic matrix composites. The described research work focuses on multiscale simulation-based design of these SiC-Si{sub 3}N{sub 4} nanoceramic matrix composites. There were two primary objectives of the research: (1) Development of a multiscale simulation tool and corresponding multiscale analyses of the high-temperature creep and fracture resistance properties of the SiC-Si{sub 3}N{sub 4} nanocomposites at nano-, meso- and continuum length- and timescales; and (2) Development of a simulation-based robust design optimization methodology for application to the multiscale simulations to predict the range of the most suitable phase morphologies for the desired high-temperature properties of the SiC-Si{sub 3}N{sub 4} nanocomposites. The multiscale simulation tool is based on a combination of molecular dynamics (MD), cohesive finite element method (CFEM), and continuum level modeling for characterizing time-dependent material deformation behavior. The material simulation tool is incorporated in a variable fidelity model management based design optimization framework. Material modeling includes development of an experimental verification framework. Using material models based on multiscaling, it was found using molecular simulations that clustering of the SiC particles near Si{sub 3}N{sub 4} grain boundaries leads to significant nanocomposite strengthening and significant rise in fracture resistance. It was found that a control of grain boundary thicknesses by dispersing non-stoichiometric carbide or nitride phases can lead to reduction in strength however significant rise in fracture strength. The
Improvement of photoluminescence intensity of Ce-doped Y{sub 3}Al{sub 5}O{sub 12} phosphor by Si{sub 3}N{sub 4} addition

Energy Technology Data Exchange (ETDEWEB)

Shyu, Jiin-Jyh, E-mail: jjshyu@ttu.edu.tw; Yang, Chia-Wei

2017-06-01

Yttrium aluminum garnet (Y{sub 3}Al{sub 5}O{sub 12}, YAG) has been widely used as a host for luminescent ions. The present paper describes the effects of Si{sub 3}N{sub 4} addition on the formation and photoluminescence properties of the Ce-doped YAG yellow phosphors. Phosphor powders with the nominal compositions of Y{sub 2.95}Ce{sub 0.05}Al{sub 5-m}Si{sub m}O{sub 12-m}N{sub m} (m = 0–0.6) were prepared by calcining the mixed raw materials at 1500 °C in nitrogen atmosphere. X-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscope, and transmission electron microscopy equipped with an energy dispersive x-ray spectrometer were used to characterize the structure of the calcined powders. The photoluminescence properties were measured with fluorescence spectrophotometry. It was found that in the range of m = 0–0.27, single phase YAG solid solution (s.s.) in which the Y, Al, and O sites are partially occupied by Ce, Si, and N ions, respectively. The nitrogen ions do not distribute homogeneously over the YAG lattice. The tendency to bond with nitrogen ion for the cations is (Y, Ce) > Si > Al. With the increase in the Si{sub 3}N{sub 4} content, the increase in both the Ce{sup 3+}/(Ce{sup 3+} + Ce{sup 4+}) ratio and the Ce-N bonds improve the intensity of the photoluminescent emission. At m = 0.27, the emission intensity reaches a maximum which is about 2.5 and 1.6 times of that for the Si{sub 3}N{sub 4}-free composition (m = 0) calcined in air and nitrogen, respectively. When the Si{sub 3}N{sub 4} content (m) is higher than 0.27, the emission intensity decreases due to the existence of residual Si{sub 3}N{sub 4} phase. - Highlights: • Addition of Si{sub 3}N{sub 4} can increase the emission intensity of YAG:Ce up to 2.5 times. • Increase in the Ce{sup 3+}/Ce{sup 4+} ratio and the number of Ce-N bonds improve the emission. • The tendency to bond with nitrogen ion for cations in YAG:Ce is (Y, Ce) > Si > Al. • The incomplete dissolution
Wear Characteristics According of Heat Treatment of Si3N4 with Different Amounts of SiO2 Nano-Colloid

International Nuclear Information System (INIS)

Ahn, Seok Hwan; Nam, Ki Woo

2014-01-01

This study sintered Si 3 N 4 with different amounts of SiO 2 nano-colloid. The surface of a mirror-polished specimen was coated with SiO 2 nano-colloid, and cracks were healed when the specimen was treated at a temperature of 1273 K for 1 h in air. Wear specimen experiments were conducted after heat treatments for 10 min at 1073, 1273, and 1573 K. The heat-treated surface that was coated with the SiO 2 nano-colloid was slightly rougher than the noncoated surface. The oxidation state of the surface according to the heat treatment temperature showed no correlation with the surface roughness. Moreover, the friction coefficient, wear loss, and bending strength were not related to the surface roughness. Si 3 N 4 exhibited an abrasive wear behavior when SKD11 was used as an opponent material. The friction coefficient was proportional to the wear loss, and the bending strength was inversely proportional to the friction coefficient and wear loss. The friction coefficient and wear loss increased with increasing amounts of the SiO 2 nanocolloid. In addition, the friction coefficient was slightly increased by increasing the heat treatment temperature
Synthesis and mechanical characterization of PZT/Sr based composite ceramics with addition of Si{sub 3}N{sub 4}; Sintese e caracterizacao mecanica de ceramicas compositas a base de PZT/Sr com adicoes de Si{sub 3}N{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Santos, M.A.P.; Santos, R.C.P.; Santos, M.C.C.; Rocha, C.D.G.; Silva, M., E-mail: cida@ipqm.mar.mil.b [Instituto de Pesquisas da Marinha (IPqM), Ilha do Governador, RJ (Brazil). Grupo de Materiais

2010-07-01

In the Underwater Acoustics field, piezoelectric ceramics are the most usually employed materials for the conversion of mechanical energy (acoustic signal) into electric energy (electric signal) and vice-versa, in sensors (hydrophones) or hydroacoustic projectors. In the development of new compositions for these applications, piezoelectric performance is generally prioritized, to the expense of its mechanical properties. With this in mind, the object of this work was to study the effects of the addition of Si{sub 3}N{sub 4} in the mechanical properties of PZT-Sr based electronic ceramics. Thus, a novel piezoelectric ceramic with the addition of small percentages in weight (0;0.1;1;3 and 5) of the structural ceramic Si{sub 3}N{sub 4} was successfully processed by the oxide mixing route ; the compounds were sintered in a conventional at 1200 deg C for 2h. The densities of the compounds thus obtained for the different percentages of Si{sub 3}N{sub 4} ranged from 55 to 97% and decreased with the increase of the content of Si{sub 3}N{sub 4}. Presence of equiaxial grains with normal growth was observed in all samples. MEV/EDS analysis of the micro-structures of the compositions detected the presence of a second phase rich in Zr, confirmed by DRX, which is a result of large quantities of volatilized PbO; the sintered pieces had their mechanical properties investigated by ultra-sonic inspection. It was observed that, among the sintered compositions, the PZT-Sr ceramic with 0.1% Si{sub 3}N{sub 4} presented the smallest value for Young's Modulus E and Shear Modulus G, 75 Gpa and 28 Gpa, respectively. The Poisson's Coefficients {nu} tended to decrease with the increase of Si{sub 3}N{sub 4} added to the PZT-Sr ceramic, indicating, thus, that the added compound may be used to adjust the mechanical properties of the material. (author)
Stress in ion-implanted CVD Si3N4 films

International Nuclear Information System (INIS)

EerNisse, E.P.

1977-01-01

The compressive stress buildup caused in chemical-vapor-deposited (CVD) Si 3 N 4 films by ion implantation is shown to be caused entirely by atomic collision effects, ionization effects being unimportant. The stress introduction rate is shown to be independent of CVD processing variables and O content of the film. The maximum attainable compressive stress change is 3.5 x 10 10 dyn/cm 2 , resulting in a maximum net compressive stress of 2 x 10 10 dyn/cm 2 for films on Si where the as-deposited films inherently have 1.5 x 10 10 dyn/cm 2 tensile stress before ion implantation. Results are presented which show that O in the films inhibits thermal annealing of the ion-implantation-induced compressive stress. Results for introduction rate and annealing effects are presented in normalized form so that workers can use the effects for intentional stress level adjustment in the films to reduce probability of cracking and detachment
Si{sub 3}N{sub 4} optomechanical crystals in the resolved-sideband regime

Energy Technology Data Exchange (ETDEWEB)

Davanço, M., E-mail: mdavanco@nist.gov [Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Department of Applied Physics, California Institute of Technology, Pasadena, California 91125 (United States); Ates, S.; Liu, Y. [Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Maryland NanoCenter, University of Maryland, College Park, Maryland 20742 (United States); Srinivasan, K. [Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)

2014-01-27

We demonstrate sideband-resolved Si{sub 3}N{sub 4} optomechanical crystals supporting 10{sup 5} quality factor optical modes at 980 nm, coupled to ≈4 GHz frequency mechanical modes with quality factors of ≈3000. Optomechanical electromagnetically induced transparency and absorption are observed at room temperature and in atmosphere with intracavity photon numbers in excess of 10{sup 4}.
Gold-coated iron nanoparticles in transparent Si{sub 3}N{sub 4} matrix thin films

Energy Technology Data Exchange (ETDEWEB)

Sanchez-Marcos, J. [Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Madrid (Spain); Cespedes, E. [Keele University, Institute for Science and Technology in Medicine, Guy Hilton Research Centre (United Kingdom); Jimenez-Villacorta, F. [Northeastern University, Department of Chemical Engineering (United States); Munoz-Martin, A. [Universidad Autonoma de Madrid, Centro de Microanalisis de Materiales (Spain); Prieto, C., E-mail: cprieto@icmm.csic.es [Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Madrid (Spain)

2013-06-15

A new method to prepare thin films containing gold-coated iron nanoparticles is presented. The ternary Fe-Au-Si{sub 3}N{sub 4} system prepared by sequential sputtering has revealed a progressive variation of microstructures from Au/Fe/Au/Si{sub 3}N{sub 4} multilayers to iron nanoparticles. Microstructural characterization by transmission electron microscopy, analysis of the magnetic properties and probing of the iron short-range order by X-ray absorption spectroscopy confirm the existence of a gold-coated iron nanoparticles of 1-2 nm typical size for a specific range of iron and gold contents per layer in the transparent silicon nitride ceramic matrix.
Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology

Energy Technology Data Exchange (ETDEWEB)

Bantaculo, Rolando, E-mail: rolandobantaculo@yahoo.com; Saitoh, Eiji; Miyamoto, Yu; Handa, Hiroyuki; Suemitsu, Maki

2011-11-01

A method to realize a novel hybrid orientations of Si surfaces, Si(111) on Si(110), has been developed by use of a Si(111)/3C-SiC(111)/Si(110) trilayer structure. This technology allows us to use the Si(111) portion for the n-type and the Si(110) portion for the p-type channels, providing a solution to the current drive imbalance between the two channels confronted in Si(100)-based complementary metal oxide semiconductor (CMOS) technology. The central idea is to use a rotated heteroepitaxy of 3C-SiC(111) on Si(110) substrate, which occurs when a 3C-SiC film is grown under certain growth conditions. Monomethylsilane (SiH{sub 3}-CH{sub 3}) gas-source molecular beam epitaxy (GSMBE) is used for this 3C-SiC interlayer formation while disilane (Si{sub 2}H{sub 6}) is used for the top Si(111) layer formation. Though the film quality of the Si epilayer leaves a lot of room for betterment, the present results may suffice to prove its potential as a new technology to be used in the next generation CMOS devices.
Electrochemical behavior of low phosphorus electroless Ni-P-Si3N4 composite coatings

International Nuclear Information System (INIS)

Balaraju, J.N.; Ezhil Selvi, V.; Rajam, K.S.

2010-01-01

In the present investigation the electroless Ni-P-Si 3 N 4 composite coatings were prepared by using a low phosphorus bath containing submicron size silicon nitride particles. Plain Ni-P deposits were also prepared for comparison. The phosphorus contents present in electroless plain Ni-P and Ni-P-Si 3 N 4 coatings are 3.7 and 3.4 wt.%, respectively. Scanning electron microscope (SEM) images obtained for composite coatings (cross-sections) showed that the second phase particles are uniformly distributed throughout the thickness of the deposits. It was found that nodularity increased with particle codeposition in Ni-P matrix. To find out the electrochemical behavior of plain Ni-P and composite coatings, potentiodynamic polarization and electrochemical impedance (EIS) studies were carried out in 3.5 wt.% sodium chloride solution in non-deaerated condition. Second phase particle incorporation in Ni-P matrix indicated a marginal decrease in corrosion current density compared to the plain Ni-P deposits. This was further confirmed by EIS studies and SEM analysis of the corroded samples.
Tuning of Schottky barrier height of Al/n-Si by electron beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Vali, Indudhar Panduranga [Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Shetty, Pramoda Kumara, E-mail: pramod.shetty@manipal.edu [Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Mahesha, M.G. [Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Petwal, V.C.; Dwivedi, Jishnu [Raja Ramanna Centre for Advanced Technology, Department of Atomic Energy, Government of India, Indore 452012 (India); Choudhary, R.J. [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452017 (India)

2017-06-15

Highlights: • Tuning of Schottky barrier height has been achieved by electron beam irradiation at different doses on n-Si wafer prior to the fabrication of Schottky contact. • The XPS analyses have shown irradiation induced defects and the formation of several localized chemical states in Si/SiOx interface that influences the Schottky barrier height. • High ideality factor indicates metal-insulator-semiconductor configuration of the Schottky diode and the inhomogeneous nature of the Schottky barrier height. • The modifications in I–V characteristics have been observed as a function of electron dose. This is caused due to changes in the Schottky diode parameters and different transport mechanisms. - Abstract: The effect of electron beam irradiation (EBI) on Al/n-Si Schottky diode has been studied by I–V characterization at room temperature. The behavior of the metal-semiconductor (MS) interface is analyzed by means of variations in the MS contact parameters such as, Schottky barrier height (Φ{sub B}), ideality factor (n) and series resistance (R{sub s}). These parameters were found to depend on the EBI dose having a fixed incident beam of energy 7.5 MeV. At different doses (500, 1000, 1500 kGy) of EBI, the Schottky contacts were prepared and extracted their contact parameters by applying thermionic emission and Cheung models. Remarkably, the tuning of Φ{sub B} was observed as a function of EBI dose. The improved n with increased Φ{sub B} is seen for all the EBI doses. As a consequence of which the thermionic emission is more favored. However, the competing transport mechanisms such as space charge limited emission, tunneling and tunneling through the trap states were ascribed due to n > 1. The analysis of XPS spectra have shown the presence of native oxide and increased radiation induced defect states. The thickness variation in the MS interface contributing to Schottky contact behavior is discussed. This study explains a new technique to tune
Ab-initio electronic structure calculations and properties of [Si{sub x}Sn{sub 1−x}]{sub 3}N{sub 4} ternary nitrides

Energy Technology Data Exchange (ETDEWEB)

Pavloudis, Th. [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Zervos, M. [Nanostructured Materials and Devices Laboratory, Department of Mechanical and Manufacturing Engineering, PO Box 20537, Nicosia 1678 (Cyprus); Komninou, Ph. [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Kioseoglou, J., E-mail: sifisl@auth.gr [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece)

2016-08-31

We carry out ab initio electronic structure calculations of (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} using density functional theory with projector augmented-wave potentials under the generalized gradient approximation. We find that the energetically favorable structure of Sn{sub 3}N{sub 4} is the face-centered cubic spinel structure, followed by the hexagonal structure which has energy band gaps of 1.85 eV and 1.44 eV respectively. The (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} ternary compound can exhibit both cubic and hexagonal crystal structures over the full range of x. However, the cubic structure is found to be energetically favorable for x < 0.3 above which the hexagonal structure of (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} dominates. The energy band gap can be tuned continuously from 1.44 eV up to 5.8 eV in the case of the hexagonal crystal structure of (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} and from 1.85 eV to 4.82 eV in the case of cubic (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4}. Nevertheless the energy gap of (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} is direct only for x < 0.3 when it is cubic and for x < 0.5 when hexagonal. - Highlights: • (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} exhibits both cubic and hexagonal crystal structures. • The cubic structure is favorable for x < 0.3 and the hexagonal structure for x > 0.3. • The bandgap of hexagonal (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} may be tuned from 1.44 eV up to 5.8 eV. • The bandgap may be tuned from 1.85 eV to 4.82 eV for the cubic (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4}. • Bandgaps are direct for x < 0.3 (cubic) and for x < 0.5 3 (hexagonal (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4}).
Development and characterisation of Ni-Si{sub 3}N{sub 4} nanocomposites

Energy Technology Data Exchange (ETDEWEB)

R, Mohan Reddy; M, Praveen B., E-mail: bm.praveen@yahoo.co.in [Dept of Chemistry, Srinivas School of Engineering, Mukka, Mangalore - 574146, Karnataka (India); M, Praveen C. [Dept. of Chemistry, PESITM, Shimoga – 577204 (India); V, Venkatesha T. [Dept. of Studies in Chemistry, School of Chemical Sciences, Kuvempu University, Shankaraghatta - 577451, Karnataka (India); Kumar N B, Rithin [Dept of Physics, Srinivas School of Engineering, Mukka, Mangalore-574 146, Karnataka (India)

2015-06-24

Nickel–Si{sub 3}N{sub 4} composites were generated by means of pulse-reverse (PR) electrodeposition technique. The corrosion rate was calculated for the composites by electrochemical methods such as polarisation and impedance methods. Composites were characterised by scanning electron microscope (SEM) and X-ray diffractometer (XRD) to evaluate their microstructures. Coatings obtained by PR method shows more corrosion resistance than DC generated coatings.

m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates

International Nuclear Information System (INIS)

Armitage, R.; Horita, M.; Suda, J.; Kimoto, T.

2007-01-01

A series of m-plane GaN layers with the Ga beam-equivalent pressure (BEP) as the only varied parameter was grown by rf-plasma assisted molecular beam epitaxy on m-plane 4H-SiC substrates using AlN buffer layers. The smoothest growth surfaces and most complete film coalescence were found for the highest Ga BEP corresponding to the Ga droplet accumulation regime. However, better structural quality as assessed by x-ray rocking curves was observed for growth at a lower Ga BEP value below the droplet limit. The variation of rocking curve widths for planes inclined with respect to the epilayer c axis followed a different trend with Ga BEP than those of reflections parallel to the c axis. The GaN layers were found to exhibit a large residual compressive strain along the a axis
Molecular beam epitaxy of InN nanowires on Si

Science.gov (United States)

Golam Sarwar, A. T. M.; Carnevale, Santino D.; Kent, Thomas F.; Laskar, Masihhur R.; May, Brelon J.; Myers, Roberto C.

2015-10-01

We report on a systematic growth study of the nucleation process of InN nanowires on Si(1 1 1) substrates using plasma assisted molecular beam epitaxy (PAMBE). Samples are grown with various substrate temperatures and III/V ratios. Scanning electron microscopy, X-ray diffraction spectroscopy, energy dispersive X-ray spectroscopy, and photoluminescence are carried out to map out the variation in structural and optical properties versus growth conditions. Statistical averages of areal density, height, and radius are mapped as a function of substrate temperature and III/V ratio. Three different morphological phases are identified on the growth surface: InN, α-In and β-In. Based on SEM image analysis of samples grown at different conditions, the formation mechanism of these phases is proposed. Finally, the growth phase diagram of PAMBE grown InN on Si under N-rich condition is presented, and tapered versus non-tapered growth conditions are identified. It is found that high growth temperature and low III/V ratio plays a critical role in the growth of non-tapered InN nanowires.
Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Sugawara, Yoshihiro; Ishikawa, Yukari, E-mail: yukari@jfcc.or.jp [Japan Fine Ceramics Center, Atsuta, Nagoya, 456-8587 (Japan); Watanabe, Arata [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya, 466-8555 (Japan); Miyoshi, Makoto; Egawa, Takashi [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya, 466-8555 (Japan); Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technoloy, Nagoya, 466-8555 (Japan)

2016-04-15

The behavior of dislocations in a GaN layer grown on a 4-inch Si(111) substrate with an AlGaN/AlN strained layer superlattice using horizontal metal-organic chemical vapor deposition was observed by transmission electron microscopy. Cross-sectional observation indicated that a drastic decrease in the dislocation density occurred in the GaN layer. The reaction of a dislocation (b=1/3[-211-3]) and anothor dislocation (b =1/3[-2113]) to form one dislocation (b =2/3[-2110]) in the GaN layer was clarified by plan-view observation using weak-beam dark-field and large-angle convergent-beam diffraction methods.
Synthesis and reactivity of bis(tetramethylcyclopentadienyl) yttrium metallocenes including the reduction of Me(3)SiN(3) to [(Me(3)Si)(2)N](-) with [(C(5)Me(4)H)(2)Y(THF)](2)(mu-eta(2):eta(2)-N(2)).

Science.gov (United States)

Lorenz, Sara E; Schmiege, Benjamin M; Lee, David S; Ziller, Joseph W; Evans, William J

2010-07-19

The metallocene precursors needed to provide the tetramethylcyclopentadienyl yttrium complexes (C(5)Me(4)H)(3)Y, [(C(5)Me(4)H)(2)Y(THF)](2)(mu-eta(2):eta(2)-N(2)), and [(C(5)Me(4)H)(2)Y(mu-H)](2) for reactivity studies have been synthesized and fully characterized, and their reaction chemistry has led to an unexpected conversion of an azide to an amide. (C(5)Me(4)H)(2)Y(mu-Cl)(2)K(THF)(x), 1, synthesized from YCl(3) and KC(5)Me(4)H reacts with allylmagnesium chloride to make (C(5)Me(4)H)(2)Y(eta(3)-C(3)H(5)), 2, which is converted to [(C(5)Me(4)H)(2)Y][(mu-Ph)(2)BPh(2)], 3, with [Et(3)NH][BPh(4)]. Complex 3 reacts with KC(5)Me(4)H to form (C(5)Me(4)H)(3)Y, 4. The reduced dinitrogen complex, [(C(5)Me(4)H)(2)Y(THF)](2)(mu-eta(2):eta(2)-N(2)), 5, can be synthesized from either [(C(5)Me(4)H)(2)Y](2)[(mu-Ph)(2)BPh(2)], 3, or (C(5)Me(4)H)(3)Y, 4, with potassium graphite under a dinitrogen atmosphere. The (15)N labeled analogue, [(C(5)Me(4)H)(2)Y(THF)](2)(mu-eta(2):eta(2)-(15)N(2)), 5-(15)N, has also been prepared, and the (15)N NMR data have been compared to previously characterized reduced dinitrogen complexes. Complex 2 reacts with H(2) to form the corresponding hydride, [(C(5)Me(4)H)(2)Y(mu-H)](2), 6. Complex 5 displays similar reactivity to that of the analogous [(C(5)Me(4)H)(2)Ln(THF)](2)(mu-eta(2):eta(2)-N(2)) complexes (Ln = La, Lu), with substrates such as phenazine, anthracene, and CO(2). In addition, 5 reduces Me(3)SiN(3) to form (C(5)Me(4)H)(2)Y[N(SiMe(3))(2)], 7.
In-beam γ-ray spectroscopy of the neutron rich 39Si

International Nuclear Information System (INIS)

Sohler, D.; Dombradi, Zs.; Achouri, N.L.; Angelique, J.C.; Bastin, B.; Azaiez, F.; Baiborodin, D.; Borcea, R.

2009-01-01

Complete text of publication follows. In order to clarify the role of proton excitations across the Z = 14 subshell closure in neutron-rich Si isotopes, we investigated the structure of the 14 39 Si 25 isotope, having three neutron-hole configurations with respect to an N = 28 core. The excited states of 39 Si were studied by in-beam γ-ray spectroscopy trough fragmentation of radioactive beams. The experiment was performed at the GANIL facility in France. The radioactive beams were produced by the fragmentation of the stable 48 Ca beam of 60 MeV/u energy and 4μA intensity on a 12 C target in the SISSI device. The cocktail beam produced was impinged onto a 9 Be target. The nuclei produced in the secondary fragmentation reaction were selected and unambiguously identified by the SPEG spectrometer. In the performed experiment the 39 Si nuclei were obtained via 1p, 1p1n, 2p1n and 2p2n knockout reactions from the 40,41 P and 42,43 S secondary beams. To measure the γ rays emitted from the excited states, the secondary target was surrounded by the 4π 'Chateau de Crystal' array consisting of 74 BaF 2 scintillators. The γ-ray spectra were generated by gating event-by-event on the incoming secondary beam particles and the ejectiles after the secondary target. For the γ rays emitted by the fast moving fragments accurate Doppler correction was performed. From the obtained γ spectra of 39 Si displayed in Figure 1, two strong γ transitions at 163 and 397 keV as well as weaker ones at 303, 657, 906, 1143 and 1551 keV have been identified. γγ coincidences were obtained in 39 Si after having added all data from the various reaction channels giving rise to 39 Si. Analysing these data the 163 keV transition was found to be in coincidence with the 657, 1143 and 1551 keV ones, but not with the 397 keV transition. The two lines of the 303+397 keV doublet are in mutual coincidence, and one or both of them are found in coincidence with the 906 keV transition.
Material development in the SI sub 3 N sub 4 system using glass encapsulated Hip'ing

Energy Technology Data Exchange (ETDEWEB)

Corbin, N.D.; Sundberg, G.J.; Siebein, K.N.; Willkens, C.A.; Pujari, V.K.; Rossi, G.A.; Hansen, J.S.; Chang, C.L.; Hammarstrom, J.L.

1992-04-01

This report covers a two-year program to develop fully dense Si{sub 3}N{sub 4} matrix SiC whisker composites with enhanced properties over monolithic Si{sub 3}N{sub 4} materials. The primary goal was to develop a composite with a fracture toughness > 10 MPa{radical}m, capable of using high pressure glass encapsulated HIP'ing. Coating methods were developed to apply thin (<150nm) stoichiometric BN layers to SiC whiskers and also to apply a dual coating of SiC over carbon to the whiskers. Fracture toughness of the composites was determined to increase as the quantity of whiskers (or elongated grains) with their axis perpendicular to the crack plane increased. Of the interface compositions evaluated in this effort, carbon was determined to be the most effective for increasing toughness. The highest toughnesses (6.8--7.0 MPa{radical}m) were obtained with uniaxially aligned carbon coated whiskers. There was no evidence of the carbon coating compromising the oxidation resistance of the composites at 1370{degree}C.
Design of a crystalline undulator based on patterning by tensile Si3N4 strips on a Si crystal

International Nuclear Information System (INIS)

Guidi, V.; Lanzoni, L.; Mazzolari, A.; Martinelli, G.; Tralli, A.

2007-01-01

A crystalline undulator consists of a crystal with a periodic deformation in which channeled particles undergo oscillations and emit coherent undulator radiation. Patterning by an alternate series of tensile Si 3 N 4 strips on a Si crystal is shown to be a tractable method to construct a crystalline undulator. The method allows periodic deformation of the crystal with the parameters suitable for implementation of a crystalline undulator. The resulting periodic deformation is present in the bulk of the Si crystal with an essentially uniform amplitude, making the entire volume of the crystal available for channeling and in turn for emission of undulator radiation
Molecular beam electric deflection of the tetrahalides CF4, CCl4, SiF4, SiCl4, GeCl4, TiF4, TiCl4, VF4, and VCl4

International Nuclear Information System (INIS)

Muenter, A.A.; Dyke, T.R.; Falconer, W.E.; Klemperer, W.

1975-01-01

Using molecular beam electric deflection, the temperature dependence of polar behavior has been studied for the molecules CF 4 , CCl 4 , SiF 4 , SiCl 4 , GeCl 4 , TiF 4 TiCl 4 , VF 4 , VF 4 , and VCl 4 . A number of these molecules show polar behavior consistent with a vibrationally induced dipole moment for states with one or both of the triply degenerate vibrations excited. In four of the tetrachloride species, the presence of a vibrationally induced dipole moment was confirmed by the change in polar behavior with isotopic substituion of the Cl atoms. The deflection behavior of the transition metal tetrahalides varied from nonpolar in VCl 4 to very polar in TiF 4
Spark plasma sintering of α-Si3N4 ceramics with Al2O3 and Y2O3 as additives and its morphology transformation

International Nuclear Information System (INIS)

Ceja-Cardenas, L.; Lemus-Ruiz, J.; Jaramillo-Vigueras, D.; Torre, S.D. de la

2010-01-01

The spark plasma sintering SPS technique has been used to densify pure α-Si 3 N 4 commercial powder, having Y 2 O 3 and Al 2 O 3 additions; from 0, 2.5 and 5.0 wt% to 0, 1.5 and 3 wt%, respectively. Such powder admixtures were previously spray-dried at 160 o C in such a way that powder was thoroughly homogenized. Set sintering treatment included: 0-20 min holding time and 38 MPa axial load, sintering temperature of 1500 o C and heating rate of 300 o C/min. The maximum relative density developed on studied specimens ranged from 99.4 to 99.8% and could only be attained once the β-phase nucleated from the α-silicon nitride matrix. Obtained Si 3 N 4 composites combine both α- and β-phases. The later phase becomes evident trough the rod-like geometry, which forms throughout the presence of a liquid face. The largest hardness value developed (1588 Hv (20kgf) ) on studied ceramics (3M-series - 3 min) matched close to the corresponding counterpart found in literature (1600 Hv), the former developed in much shorter sintering times. Using X-ray diffraction XRD and scanning electron microscope SEM analyses, the two major phases of Si 3 N 4 were identified in the resultant microstructures. The morphology evolution of Si 3 N 4 particles as occurred upon SPS-sintering is analyzed.
In-situ SiN{sub x}/InN structures for InN field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Zervos, Ch., E-mail: hzervos@physics.uoc.gr; Georgakilas, A. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Beleniotis, P. [Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece)

2016-04-04

Critical aspects of InN channel field-effect transistors (FETs) have been investigated. SiN{sub x} dielectric layers were deposited in-situ, in the molecular beam epitaxy system, on the surface of 2 nm InN layers grown on GaN (0001) buffer layers. Metal-insulator-semiconductor Ni/SiN{sub x}/InN capacitors were analyzed by capacitance-voltage (C-V) and current-voltage measurements and were used as gates in InN FET transistors (MISFETs). Comparison of the experimental C-V results with self-consistent Schrödinger-Poisson calculations indicates the presence of a positive charge at the SiN{sub x}/InN interface of Q{sub if} ≈ 4.4 – 4.8 × 10{sup 13 }cm{sup −2}, assuming complete InN strain relaxation. Operation of InN MISFETs was demonstrated, but their performance was limited by a catastrophic breakdown at drain-source voltages above 2.5–3.0 V, the low electron mobility, and high series resistances of the structures.
Fabrication of FeSi and Fe{sub 3}Si compounds by electron beam induced mixing of [Fe/Si]{sub 2} and [Fe{sub 3}/Si]{sub 2} multilayers grown by focused electron beam induced deposition

Energy Technology Data Exchange (ETDEWEB)

Porrati, F.; Sachser, R.; Huth, M. [Physikalisches Institut, Goethe-Universität, Max-von-Laue-Str. 1, D-60438 Frankfurt am Main (Germany); Gazzadi, G. C. [S3 Center, Nanoscience Institute-CNR, Via Campi 213/a, 41125 Modena (Italy); Frabboni, S. [S3 Center, Nanoscience Institute-CNR, Via Campi 213/a, 41125 Modena (Italy); FIM Department, University of Modena and Reggio Emilia, Via G. Campi 213/a, 41125 Modena (Italy)

2016-06-21

Fe-Si binary compounds have been fabricated by focused electron beam induced deposition by the alternating use of iron pentacarbonyl, Fe(CO){sub 5}, and neopentasilane, Si{sub 5}H{sub 12} as precursor gases. The fabrication procedure consisted in preparing multilayer structures which were treated by low-energy electron irradiation and annealing to induce atomic species intermixing. In this way, we are able to fabricate FeSi and Fe{sub 3}Si binary compounds from [Fe/Si]{sub 2} and [Fe{sub 3}/Si]{sub 2} multilayers, as shown by transmission electron microscopy investigations. This fabrication procedure is useful to obtain nanostructured binary alloys from precursors which compete for adsorption sites during growth and, therefore, cannot be used simultaneously.
Multi-stage En/decoders integrated in low loss Si3N4-SiO2 for incoherent spectral amplitude OCDMA on PON

NARCIS (Netherlands)

Huiszoon, B.; Leinse, Arne; Geuzebroek, D.H.; Augustin, L.M.; Klein, E.J.; de Waardt, H.; Khoe, G.D.; Koonen, A.M.J.; Emplit, Ph.; Delqué, M.; Gorza, S.-P.; Kockaert, P.; Leijtens, X

2007-01-01

In this paper, we show and analyze, for the first time, the static performance of integrated multi-stage cascade and tree spectral amplitude OCDMA en/decoders (E/Ds) which are fabricated in the low loss Si3N4–SiO2 material system. Combined with incoherent broad spectral sources these E/Ds enable
Tribological properties of SiC-based MCD films synthesized using different carbon sources when sliding against Si3N4

Science.gov (United States)

Wang, Xinchang; Shen, Xiaotian; Zhao, Tianqi; Sun, Fanghong; Shen, Bin

2016-04-01

Micro-crystalline diamond (MCD) films are deposited on reactive sintering SiC substrates by the bias enhanced hot filament chemical vapor deposition (BE-HFCVD) method, respectively using the methane, acetone, methanol and ethanol as the carbon source. Two sets of standard tribotests are conducted, adopting Si3N4 balls as the counterpart balls, respectively with the purpose of clarifying differences among tribological properties of different MCD films, and studying detailed effects of the carbon source C, normal load Fn and sliding velocity v based on orthogonal analyses. It is clarified that the methane-MCD film presents the lowest growth rate, the highest film quality, the highest hardness and the best adhesion, in consequence, it also performs the best tribological properties, including the lowest coefficient of friction (COF) and wear rate Id, while the opposite is the methanol-MCD film. Under a normal load Fn of 7 N and at a sliding velocity v of 0.4183 m/s, for the methane-MCD film, the maximum COF (MCOF) is 0.524, the average COF during the relatively steady-state regime (ACOF) is 0.144, and the Id is about 1.016 × 10-7 mm3/N m; and for the methanol-MCD film, the MCOF is 0.667, the ACOF is 0.151, and the Id is 1.448 × 10-7 mm3/N m. Moreover, the MCOF, ACOF, Id and the wear rate of the Si3N4 ball Ib will all increase with the Fn, while the v only has significant effect on the ACOF, which shows a monotone increasing trend with the v.
Perspectives of the Si3N4-TiN ceramic composite as a biomaterial and manufacturing of complex-shaped implantable devices by electrical discharge machining (EDM).

Science.gov (United States)

Bucciotti, Francesco; Mazzocchi, Mauro; Bellosi, Alida

2010-01-01

In this work we investigated the suitability of electroconductive silicon nitride/titanium nitride composite for biomedical implantable devices with particular attention on the processing route that allows the net-shaping of complex components by electrical discharge machining (EDM). The composite, constituted mainly of a beta-Si3N4, dispersed TiN grains and a glassy grain boundary phase, exhibited a low density and high hardness, strength and toughness. Bulk, surface characteristics and properties of the Si3N4-TiN composite were analyzed. After the EDM process, the microstructure of the machined surface was examined. The obtained results showed that the Si3N4-TiN ceramic composite together with the EDM manufacturing process might potentially play a key role in implantable load-bearing prosthesis applications.
Surface damage versus defect microstructures in He and H ion co-implanted Si{sub 3}N{sub 4}/Si

Energy Technology Data Exchange (ETDEWEB)

Zhu, F. [School of Science, Tianjin University, Tianjin 300072 (China); Liu, C.L., E-mail: liuchanglong@tju.edu.cn [School of Science, Tianjin University, Tianjin 300072 (China); Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics Faculty of Science, Tianjin 300072 (China); Gao, Y.J.; Wang, Z.; Wang, J. [School of Science, Tianjin University, Tianjin 300072 (China)

2012-09-01

Cz n-type Si (1 0 0) wafers with a top Si{sub 3}N{sub 4} layer of about 170 nm in thickness were sequentially implanted with 40 keV He ions at a fluence of 5 Multiplication-Sign 10{sup 16}/cm{sup 2} and 35 keV H ions at fluences of 1 Multiplication-Sign 10{sup 15}, 5 Multiplication-Sign 10{sup 15} and 1 Multiplication-Sign 10{sup 16}/cm{sup 2}, respectively. Creation and evolution of surface damage as well as micro-defects have been studied. Our results clearly show that production of surface damage depends strongly on both the H implant fluence and annealing temperature. Only blistering or localized exfoliation of the top Si{sub 3}N{sub 4} layer has been observed for post H implantation at fluences of 1 Multiplication-Sign 10{sup 15} and 5 Multiplication-Sign 10{sup 15}/cm{sup 2} upon 800 Degree-Sign C annealing. However, serious surface exfoliation has been found for the 1 Multiplication-Sign 10{sup 16}/cm{sup 2} H co-implanted samples after annealing at 450 Degree-Sign C and above. The exfoliation occurs at a depth of about 360 nm from the surface, which is obviously larger than the He or H ion range. Moreover, the exfoliated craters show clear two-step structures. Cross-sectional transmission electron microscopy (XTEM) observations reveal formation of micro-cracks in Si bulk and along the original interface, which is mainly responsible for the observed surface phenomena. The formation mechanism of micro-cracks has been discussed in combination of He and H implant-induced defects, impurities as well as their interactions upon annealing.
The experimental exploration of nano-Si{sub 3}N{sub 4}/paraffin on thermal behavior of phase change materials

Energy Technology Data Exchange (ETDEWEB)

Yang, Yanyang [Advanced Materials Institute and Clearer Production Key Laboratory, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Haidian District, Beijing 100084 (China); Luo, Jie; Song, Guolin; Liu, Yuan [Advanced Materials Institute and Clearer Production Key Laboratory, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Tang, Guoyi, E-mail: tanggy@tsinghua.edu.cn [Advanced Materials Institute and Clearer Production Key Laboratory, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Haidian District, Beijing 100084 (China)

2014-12-10

Highlights: • A new high thermal conductivity phase change materials. • Experimental study of strengthening thermal conductivity of phase change materials. • Theoretical analyses of thermal conductivity and crystallization. • Increased latent heat of phase change materials. - Abstract: In this study, nano-Si3N4 was employed to enhance thermal performance of phase change materials (PCMs), and a new formula was proposed to explain the relationship between the thermal conductivity and the latent heat. Ultrasonically stirred, the composite PCMs were prepared at 80 °C with different additional rate (1, 2, 3, 4, 5, 10wt%). The experimental results showed that the thermal conductivity of composite PCMs increased with the increasing Si3N4 loading contents, and the thermal conductivity increased by 35% while the thermal diffusivity increased by 47% at 10wt% Si{sub 3}N{sub 4} additional fraction. Additionally, there was an interesting phenomenon. The latent heat of the composite PCMs at 1wt% addition rate was 3.4% higher than that of paraffin, that has been rarely reported in articles. An explanation was provided from crystallography and thermodynamic. A calculation method was also performed with relative errors in the range of 5.68%.
Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology

Science.gov (United States)

Llobet, J.; Rius, G.; Chuquitarqui, A.; Borrisé, X.; Koops, R.; van Veghel, M.; Perez-Murano, F.

2018-04-01

We present the fabrication, operation, and CMOS integration of arrays of suspended silicon nanowires (SiNWs). The functional structures are obtained by a top-down fabrication approach consisting in a resistless process based on focused ion beam irradiation, causing local gallium implantation and silicon amorphization, plus selective silicon etching by tetramethylammonium hydroxide, and a thermal annealing process in a boron rich atmosphere. The last step enables the electrical functionality of the irradiated material. Doubly clamped silicon beams are fabricated by this method. The electrical readout of their mechanical response can be addressed by a frequency down-mixing detection technique thanks to an enhanced piezoresistive transduction mechanism. Three specific aspects are discussed: (i) the engineering of mechanically coupled SiNWs, by making use of the nanometer scale overhang that it is inherently-generated with this fabrication process, (ii) the statistical distribution of patterned lateral dimensions when fabricating large arrays of identical devices, and (iii) the compatibility of the patterning methodology with CMOS circuits. Our results suggest that the application of this method to the integration of large arrays of suspended SiNWs with CMOS circuitry is interesting in view of applications such as advanced radio frequency band pass filters and ultra-high-sensitivity mass sensors.
Piezoresistance of top-down suspended Si nanowires

International Nuclear Information System (INIS)

Koumela, A; Mercier, D; Dupre, C; Jourdan, G; Marcoux, C; Ollier, E; Duraffourg, L; Purcell, S T

2011-01-01

Measurements of the gauge factor of suspended, top-down silicon nanowires are presented. The nanowires are fabricated with a CMOS compatible process and with doping concentrations ranging from 2 x 10 20 down to 5 x 10 17 cm -3 . The extracted gauge factors are compared with results on identical non-suspended nanowires and with state-of-the-art results. An increase of the gauge factor after suspension is demonstrated. For the low doped nanowires a value of 235 is measured. Particular attention was paid throughout the experiments to distinguishing real resistance change due to strain modulation from resistance fluctuations due to charge trapping. Furthermore, a numerical model correlating surface charge density with the gauge factor is presented. Comparison of the simulations with experimental measurements shows the validity of this approach. These results contribute to a deeper understanding of the piezoresistive effect in Si nanowires.
Airworthiness Certification of Fe-Si3N4-graphite Brake Composites for Military Aircraft

Directory of Open Access Journals (Sweden)

T.R. Prabhu

2015-12-01

Full Text Available Metal matrix hybrid composites are usually preferred for high energy aircraft (1-10 MJ brake pads (HEABP applications. The report focuses mainly on the evaluation of the wear and braking performance of the composite for the military aircraft applications. In this paper, the design and processing of a typical HEABP composite have been discussed in detail. The airworthiness qualification tests for the HEABP and the brake units are outlined with details. Also, brake testing parameters calculations derived from the typical aircraft data are presented for both the laboratory and full scale dynamometer tests. A case study of Fe-Si3N4- graphite composite pads is presented to exemplify the steps involved in the design, development, and airworthiness certification of HEABPs for the 8 MJ energy military aircraft. From the microstructure and wear surface morphology analysis and the results of brake performance parameters, functional tests and aircraft trials, it is concluded that the Fe-Si3N4- graphite composite has a minimum life of 200 normal energy landings with excellent braking performances.
The Li–Si–(O)–N system revisited: Structural characterization of Li{sub 21}Si{sub 3}N{sub 11} and Li{sub 7}SiN{sub 3}O

Energy Technology Data Exchange (ETDEWEB)

Casas-Cabanas, M. [CIC energiGUNE, Parque Tecnológico de Álava, Albert Einstein 48, ED.CIC, 01510 Miñano (Spain); Santner, H. [Institut de Ciència de Materials de Barcelona (CSIC) Campus UAB, 08193 Bellaterra, Catalonia (Spain); Palacín, M.R., E-mail: rosa.palacin@icmab.es [Institut de Ciència de Materials de Barcelona (CSIC) Campus UAB, 08193 Bellaterra, Catalonia (Spain)

2014-05-01

A systematic study of the Li–Si–(O)–N system is presented. The synthetic conditions to prepare Li{sub 2}SiN{sub 2}, Li{sub 5}SiN{sub 3}, Li{sub 18}Si{sub 3}N{sub 10}, Li{sub 21}Si{sub 3}N{sub 11} and Li{sub 7}SiN{sub 3}O are described and the structure of the last two compounds has been solved for the first time. While Li{sub 21}Si{sub 3}N{sub 11} crystallizes as a superstructure of the anti-fluorite structure with Li and Si ordering, Li{sub 7}SiN{sub 3}O exhibits the anti-fluorite structure with both anion and cation disorder. - Graphical abstract: A systematic study of the Li–Si–(O)–N system is presented. Li{sub 21}Si{sub 3}N{sub 11} crystallizes as a superstructure of the anti-fluorite structure with Li and Si ordering, Li{sub 7}SiN{sub 3}O exhibits the anti-fluorite structure with both anion and cation disorder. - Highlights: • Li{sub 2}SiN{sub 2}, Li{sub 5}SiN{sub 3}, Li{sub 18}Si{sub 3}N{sub 10}, Li{sub 21}Si{sub 3}N{sub 11} and Li{sub 7}SiN{sub 3}O are prepared. • The structures of Li{sub 21}Si{sub 3}N{sub 11} and Li{sub 7}SiN{sub 3}O are presented. • Li{sub 21}Si{sub 3}N{sub 11} exhibits an anti-fluorite superstructure with Li and Si ordering.

Tribological Behavior of Babbitt Alloy Rubbing Against Si3N4 and Steel Under Dry Friction Condition

Science.gov (United States)

Ji, Xianbing; Chen, Yinxia

2016-03-01

The tribological behavior of Babbitt alloy rubbing with Si3N4 ball and steel ball with various sliding speeds at dry friction condition was investigated. It was found that B88 alloy rubbing with Si3N4 ball and steel ball possesses a low sliding wear resistance at dry friction. The wear rate is above 10-4 mm3/Nm, and the friction coefficient is from 0.2 to 0.4. At low sliding speed of 0.05-0.1 m/s, the mainly wear mechanisms are microgroove and fatigue wear, while at high sliding speed of 0.5 m/s, the wear mechanisms depend on plastic deformation and delamination. The high wear rate indicates that it is needed to prevent Babbitt alloy from working at dry friction conditions, while the low friction coefficient suggests that it is not easy to the occurrence of cold weld.
Decrease in electrical contact resistance of Sb-doped n+-BaSi2 layers and spectral response of an Sb-doped n+-BaSi2/undoped BaSi2 structure for solar cells

Science.gov (United States)

Kodama, Komomo; Takabe, Ryota; Yachi, Suguru; Toko, Kaoru; Suemasu, Takashi

2018-03-01

We investigated how the electron concentration n in a 300-nm-thick Sb-doped n+-BaSi2 layer grown by molecular beam epitaxy affected the contact resistance R C to surface electrodes (Al, indium-tin-oxide). As the n of n-BaSi2 increased, R C decreased and reached a minimum of 0.019 Ω cm2 at n = 2.4 × 1018 cm-3 for the Al electrodes. This value was more than 1 order of magnitude smaller than that obtained for Al/B-doped p-BaSi2. We believe that this significant decrease in R C came from Sb segregation. Furthermore, the internal quantum efficiency (IQE) spectrum was evaluated for an Sb-doped n+-BaSi2 (20 nm)/undoped BaSi2 (500 nm)/n+-Si(111) structure. Its IQE reached as high as ˜50% over a wide wavelength range under a small bias voltage of 0.1 V applied between the top and bottom electrodes.
Molecular Dynamics Study of Superelastic Performance of a β-Si3N4 Nanohelical Coil

NARCIS (Netherlands)

Lu, X.; Gao, X.; Guo, X.; La, P.; Dong, Q.; Zhang, X.

2016-01-01

Superealsticity behavior has been discovered for the β-Si3N4 nanohelical coil. By a series of cyclic loading and unloading simulation tests, the nanohelical coil could elastically recover its original shape after a relatively long axial tension far beyond the elastic limit, accompanying little
pH controlled dispersion and slip casting of Si3N4 in aqueous media

Indian Academy of Sciences (India)

Unknown

The optimum dispersion was found to be in the pH region 9–11 wherein the slurry dis- played minimum .... presence of high levels of agglomeration of fine particles since the ... to the difference in surface chemistry of the powders. The Si3N4 ...
Structural, Electronic, and Thermodynamic Properties of Tetragonal t-SixGe3−xN4

Directory of Open Access Journals (Sweden)

Chenxi Han

2018-03-01

Full Text Available The structural, mechanical, anisotropic, electronic, and thermal properties of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4 in the tetragonal phase are systematically investigated in the present work. The mechanical stability is proved by the elastic constants of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4. Moreover, they all demonstrate brittleness, because B/G < 1.75, and v < 0.26. The elastic anisotropy of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4 is characterized by Poisson’s ratio, Young’s modulus, the percentage of elastic anisotropy for bulk modulus AB, the percentage of elastic anisotropy for shear modulus AG, and the universal anisotropic index AU. The electronic structures of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4 are all wide band gap semiconductor materials, with band gaps of 4.26 eV, 3.94 eV, 3.83 eV, and 3.25 eV, respectively, when using the Heyd-Scuseria-Ernzerhof (HSE06 hybrid functional. Moreover, t-Ge3N4 is a quasi-direct gap semiconductor material. The thermodynamic properties of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4 are investigated utilizing the quasi-harmonic Debye model. The effects of temperature and pressure on the thermal expansion coefficient, heat capacity, Debye temperature, and Grüneisen parameters are discussed in detail.
Design-dependent gauge factors of highly doped n-type 4H-SiC piezoresistors

International Nuclear Information System (INIS)

Akiyama, T; Briand, D; De Rooij, N F

2012-01-01

This paper presents the experimentally obtained gauge factor (GF) of 4H-SiC piezoresistors, fabricated out of the n-type epitaxial layer and characterized on millimeter-size SiC cantilever beams at room temperature. It was found that the GF is dependent on the piezoresistor's length and width. Piezoresistors narrower than approximately 30 µm showed a width-dependent GF. The highest GF of 20.8 was obtained with a single element piezoresistor in transverse orientation. In longitudinal orientation, the highest GF was −10, which was obtained with a clustered piezoresistor with plural identical elements. Essential factors to consider for the design of optimum 4H-SiC piezoresistors for a Wheatstone bridge configuration are presented. (paper)
In situ study of interface reactions of ion beam sputter deposited (Ba0.5Sr0.5)TiO3 films on Si, SiO2, and Ir

International Nuclear Information System (INIS)

Gao, Y.; Mueller, A.H.; Irene, E.A.; Auciello, O.; Krauss, A.; Schultz, J.A.

1999-01-01

(Ba 0.5 ,Sr 0.5 )TiO 3 (BST) thin films were deposited on MgO, Si, SiO 2 and Ir surfaces by ion beam sputter deposition in oxygen at 700 degree C. In situ spectroscopic ellipsometry (SE) has been used to investigate the evolution of the BST films on different surfaces during both deposition and postannealing processes. First, the optical constants of the BST films in the photon energy range of 1.5 - 4.5 eV were determined by SE analysis on crystallized BST films deposited on MgO single crystal substrates. The interfaces in BST/Si and BST/SiO 2 /Si structure were examined by SE and Auger electron spectroscopy depth profiles. Subcutaneous oxidation in the BST/Ir structure was observed by in situ SE during both ion beam sputter deposition and postdeposition annealing in oxygen at 700 degree C. A study of the thermal stability of the Ir/TiN/SiO 2 /Si structure in oxygen at 700 degree C was carried out using in situ SE. The oxidation of Ir was confirmed by x-ray diffraction. The surface composition and morphology evolution after oxidation were investigated by time of flight mass spectroscopy of recoiled ions (TOF-MSRI) and atomic force microscopy. It has been found that Ti from the underlying TiN barrier layer diffused through the Ir layer onto the surface and thereupon became oxidized. It was also shown that the surface roughness increases with increasing oxidation time. The implications of the instability of Ir/TiN/SiO 2 /Si structure on the performance of capacitor devices based on this substrate are discussed. It has been shown that a combination of in situ SE and TOF-MSRI provides a powerful methodology for in situ monitoring of complex oxide film growth and postannealing processes. copyright 1999 American Vacuum Society
Ion beam synthesis and characterization of large area 3C-SiC pseudo substrates for homo- and heteroepitaxy

International Nuclear Information System (INIS)

Haeberlen, Maik

2006-12-01

In this work, large area epitaxial 3C-SiC films on Si(100) and Si(111) were formed by ion beam synthesis and subsequently characterized for their structural and crystalline properties. These SiC/Si structures are meant to be used as SiC pseudosubstrates for the homo- and heteroepitaxial growth of other compound semiconductors. The suitability of these pseudosubstrates for this purpose was tested using various epitaxial systems and thin film growth methods. For this the homoepitaxial growth of 3C-SiC employing C 60 -MBE and the heteroepitaxial growth of hexagonal GaN films grown by MOCVD and IBAMBA was studied in detail. The comparison of the structural and crystalline properties with data from literature enabled a qualified judgement of the potential of the 3C-SiC pseudosubstrates as an alternative substrate for the epitaxial growth of such films. These new 3C-SiC pseudosubstrates also enabled studies of other little known epitaxial systems: For the first time hexagonal ZnO films on (111) oriented pseudosubstrates were grown using PLD. The method if IBAMBE enabled the growth of cubic GaN layers on (100)-oriented pseudosubstrates. (orig.)
Electron excitations in BeAl2O4, Be2SiO4 and Be3Al2Si6O18 crystals

International Nuclear Information System (INIS)

Ivanov, V.Yu.; Pustovarov, V.A.; Shlygin, E.S.; Korotaev, A.V.; Kruzhalov, A.V.

2005-01-01

Low-temperature (T = 7 K) time-resolved selectively photoexcited luminescence spectra (2-6 eV) and luminescence excitation spectra (8-35 eV) of wide-bandgap chrysoberyl BeAl 2 O 4 , phenacite Be 2 SiO 4 , and beryl Be 3 Al 2 Si 6 O 18 crystals have been studied using time-resolved VUV spectroscopy. Both the intrinsic luminescence of the crystals and the luminescence associated with structural defects were assigned. Energy transfer to impurity luminescence centers in alexandrite and emerald was investigated. Luminescence characteristics of stable crystal lattice defects were probed by 3.6-MeV accelerated helium ion beams [ru
Self-assembly and electrical characteristics of 4-pentynoic acid functionalized Fe3O4-γ-Fe2O3 nanoparticles on SiO2/n-Si

Science.gov (United States)

Baharuddin, Aainaa Aqilah; Ang, Bee Chin; Wong, Yew Hoong

2017-11-01

A novel investigation on a relationship between temperature-influential self-assembly (70-300 °C) of 4-pentynoic acid functionalized Fe3O4-γ-Fe2O3 nanoparticles (NPs) on SiO2/n-Si with electrical properties was reported with the interests for metal-oxide-semiconductor applications. X-ray diffractometer (XRD) analysis conveyed that 8 ± 1 nm of the NPs were assembled. Increasing heating temperature induced growth of native oxide (SiO2). Raman analysis confirmed the coexistence of Fe3O4-γ-Fe2O3. Attenuated Total Reflectance Infrared (ATR-IR) spectra showed that self-assembly occurred via Sisbnd Osbnd C linkages. While Sisbnd Osbnd C linkages were broken down at elevated temperatures, formations of Si-OH defects were amplified; a consequence of physisorbed surfactants disintegration. Atomic force microscopy (AFM) showed that sample with more physisorbed surfactants exhibited the highest root-mean-square (RMS) roughness (18.12 ± 7.13 nm) whereas sample with lesser physisorbed surfactants displayed otherwise (12.99 ± 4.39 nm RMS roughness). Field Emission Scanning Electron Microscope (FE-SEM) analysis showed non-uniform aggregation of the NPs, deposited as film (12.6 μm thickness). The increased saturation magnetization (71.527 A m2/kg) and coercivity (929.942 A/m) acquired by vibrating sample magnetometer (VSM) of the sample heated at 300 °C verified the surfactants' disintegration. Leakage current density-electric field (J-E) characteristics showed that sample heated at 150 °C with the most aggregated NPs as well as the most developed Sisbnd Osbnd C linkages demonstrated the highest breakdown field and barrier height at 2.58 × 10-3 MV/cm and 0.38 eV respectively. Whereas sample heated at 300 °C with the least Sisbnd Osbnd C linkages as well as lesser aggregated NPs showed the lowest breakdown field and barrier height at 1.08 × 10-3 MV/cm and 0.19 eV respectively. This study opens up better understandings on how formation and breaking down of covalent
Electron density distribution and disordered crystal structure of 15R-SiAlON, SiAl4O2N4

International Nuclear Information System (INIS)

Banno, Hiroki; Hanai, Takaaki; Asaka, Toru; Kimoto, Koji; Fukuda, Koichiro

2014-01-01

The crystal structure of SiAl 4 O 2 N 4 was characterized by laboratory X-ray powder diffraction (CuKα 1 ). The title compound is trigonal with space group R3-bar m. The hexagonal unit-cell dimensions (Z=3) are a=0.301332(3) nm, c=4.18616(4) nm and V=0.3291825(5) nm 3 . The initial structural model was successfully derived by the charge-flipping method and further refined by the Rietveld method. The final structural model showed the positional disordering of one of the three (Si,Al) sites. The maximum-entropy method-based pattern fitting (MPF) method was used to confirm the validity of the split-atom model, in which conventional structure bias caused by assuming intensity partitioning was minimized. The reliability indices calculated from the MPF were R wp =5.05%, S (=R wp /R e )=1.21, R p =3.77%, R B =1.29% and R F =1.01%. The disordered crystal structure was successfully described by overlapping three types of domains with ordered atom arrangements. The distribution of atomic positions in one of the three types of domains can be achieved in the space group R3-bar m. The atom arrangements in the other two types of domains are noncentrosymmetrical with the space group R3m. These two structural configurations are related by the pseudo-symmetry inversion. -- Graphical abstract: A bird's eye view of electron densities up to 75.3% (0.133 nm −3 ) of the maximum on the plane parallel to (110) with the corresponding atomic arrangements of SiAl 4 O 2 N 4 . Highlights: • Crystal structure of SiAl 4 O 2 N 4 is determined by laboratory X-ray powder diffraction. • The atom arrangements are represented by the split-atom model. • The maximum-entropy method-based pattern fitting method is used to confirm the validity of the model. • The disordered structure is described by overlapping three types of domains with ordered atom arrangements
Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions

International Nuclear Information System (INIS)

Lindner, J.K.N.; Wenzel, S.; Stritzker, B.

2001-01-01

The formation of metal silicide layers contacting an ion beam synthesized buried 3C-SiC layer in silicon by means of high-dose titanium and molybdenum implantations is reported. Two different strategies to form such contact layers are explored. The titanium implantation aims to convert the Si top layer of an epitaxial Si/SiC/Si layer sequence into TiSi 2 , while Mo implantations were performed directly into the SiC layer after selectively etching off all capping layers. Textured and high-temperature stable C54-TiSi 2 layers with small additions of more metal-rich silicides are obtained in the case of the Ti implantations. Mo implantations result in the formation of the high-temperature phase β-MoSi 2 , which also grows textured on the substrate. The formation of cavities in the silicon substrate at the lower SiC/Si interface due to the Si consumption by the growing silicide phase is observed in both cases. It probably constitutes a problem, occurring whenever thin SiC films on silicon have to be contacted by silicide forming metals independent of the deposition technique used. It is shown that this problem can be solved with ion beam synthesized contact layers by proper adjustment of the metal ion dose
Uso da técnica de dilatometria no estudo do efeito de diferentes aditivos na sinterização de Si3N4 Use of dilatometry to study the effect of different additives on the sintering of Si3N4

Directory of Open Access Journals (Sweden)

S. Ribeiro

2000-03-01

Full Text Available Nos últimos anos vem sendo testados óxidos de terras raras pesadas como aditivos de sinterização, via fase líquida, do nitreto de silício (Si3N4. Este trabalho visou o estudo do comportamento da sinterização do Si3N4 aditivado com um concentrado de óxidos de ítrio e terras raras pesadas e sílica, nas quantidades de 14 e 21%. Os resultados obtidos foram comparados com os apresentados quando do uso de óxido de ítrio e sílica, amplamente conhecidos como aditivos de sinterização de cerâmicas covalentes. Foi comparada também a influência da forma em que os aditivos foram usados, óxidos e dissilicatos. As experiências foram realizadas num dilatômetro e os resultados da sinterização são dados em termos de retração linear e velocidade de retração. Verificou-se que as amostras com maior quantidade de aditivos apresentaram maiores retrações, bem como velocidades de retração superiores. Para as amostras aditivadas com 14 e 21% de Y2O3/SiO2, os resultados foram de 13,1 e 15,5%, respectivamente, e para as aditivadas com concentrado/SiO2, 13,7 e 15,7%, respectivamente. Além disso, maiores retrações e razão de retração foram observadas para amostras com dissilicatos como aditivos, em comparação às amostras com a correspondente mistura de óxidos. Em todos os casos, as amostras aditivadas com o concentrado/SiO2, apresentaram retrações e velocidades de retração superiores às apresentadas pelas aditivadas com Y2O3/SiO2, mostrando ser mais eficiente como aditivo de sinterização do Si3N4.In recent years heavy rare earth oxides have been investigated as sinter additives in the liquid phase sintering of silicon nitride, Si3N4. This work reports on comparative sintering experiments of Si3N4 with yttria/silica and rare earth oxide concentrate/silica additions. The additive contents used were 14 and 21 vol%. The influence of pure oxide additions was compared to that of pre-reacted disilicates. The experiments were
Designing an Epithermal Neutron Beam for Boron Neutron Capture Therapy for the Fusion Reactions 2H(d,n)3He and 3H(d,n)4He1

International Nuclear Information System (INIS)

Verbeke, J.M.; Costes, S.V.; Bleuel, D.; Vujic, J.; Leung, K.N.

1998-01-01

A beam shaping assembly has been designed to moderate high energy neutrons from the fusion reactions 2 H(d,N) 3 He and 3 H(d,n) 4 He for use fin boron neutron capture therapy. The low neutron yield of the 2 H(d,n) 3 He reaction led to unacceptably long treatment times. However, a 160 mA deuteron beam of energy 400 keV led to a treatment time of 120 minutes with the reaction 3 H(d,n) 4 He. Equivalent doses of 9.6 Gy-Eq and 21.9 Gy-Eq to the skin and to a 8 cm deep tumor respectively have been computed
Ion beam synthesis and characterization of large area 3C-SiC pseudo substrates for homo- and heteroepitaxy; Ionenstrahlsynthese und Charakterisierung grossflaechiger 3C-SiC-Pseudosubstrate fuer die Homo- und Heteroepitaxie

Energy Technology Data Exchange (ETDEWEB)

Haeberlen, Maik

2006-12-15

In this work, large area epitaxial 3C-SiC films on Si(100) and Si(111) were formed by ion beam synthesis and subsequently characterized for their structural and crystalline properties. These SiC/Si structures are meant to be used as SiC pseudosubstrates for the homo- and heteroepitaxial growth of other compound semiconductors. The suitability of these pseudosubstrates for this purpose was tested using various epitaxial systems and thin film growth methods. For this the homoepitaxial growth of 3C-SiC employing C{sub 60}-MBE and the heteroepitaxial growth of hexagonal GaN films grown by MOCVD and IBAMBA was studied in detail. The comparison of the structural and crystalline properties with data from literature enabled a qualified judgement of the potential of the 3C-SiC pseudosubstrates as an alternative substrate for the epitaxial growth of such films. These new 3C-SiC pseudosubstrates also enabled studies of other little known epitaxial systems: For the first time hexagonal ZnO films on (111) oriented pseudosubstrates were grown using PLD. The method if IBAMBE enabled the growth of cubic GaN layers on (100)-oriented pseudosubstrates. (orig.)
Micro/nanoscale mechanical characterization and in situ observation of cracking of laminated Si3N4/BN composites

International Nuclear Information System (INIS)

Li Xiaodong; Zou Linhua; Ni Hai; Reynolds, Anthony P.; Wang Changan; Huang Yong

2008-01-01

Micro/nanoscale mechanical characterization of laminated Si 3 N 4 /BN composites was carried out by nanoindentation techniques. A custom-designed micro mechanical tester was integrated with an optical microscope and an atomic force microscope to perform in situ three-point bending tests on notched Si 3 N 4 /BN composite bend specimens where the crack initiation and propagation were imaged simultaneously with the optical microscope and atomic force microscope during bending loading. The whole fracture process was in situ captured. It was found that crack deflection was initiated/induced by the pre-existing microvoids and microcracks in BN interfacial layers. New fracture mechanisms were proposed to provide guidelines for the design of biomimetic nacre-like composites
Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching

International Nuclear Information System (INIS)

Onojima, Norio; Suda, Jun; Matsunami, Hiroyuki

2002-01-01

Insulating AlN layers were grown on surface-controlled 6H-SiC subtrates by molecular-beam epitaxy (MBE) using elemental Al and rf plasma-excited nitrogen (N*). HCl gas etching was introduced as an effective pretreatment method of substrate for MBE growth of AlN. 6H-SiC substrates pretreated by HCl gas etching had no surface polishing scratches and an atomically flat surface. In addition, evident ( 3 √x 3 √)R30 deg. surface reconstruction was observed even before thermal cleaning. AlN layers grown on this substrate had no defects related to surface polishing scratches and excellent insulating characteristics
Fast reactor irradiation effects on fracture toughness of Si_3N_4 in comparison with MgAl_2O_4 and yttria stabilized ZrO_2

International Nuclear Information System (INIS)

Tada, K.; Watanabe, M.; Tachi, Y.; Kurishita, H.; Nagata, S.; Shikama, T.

2016-01-01

Fracture toughness of silicon nitride (Si_3N_4), magnesia-alumina spinel (MgAl_2O_4) and yttria stabilized zirconia (8 mol%Y_2O_3–ZrO_2) was evaluated by the Vickers-indentation technique after the fast reactor irradiation up to 55 dpa (displacement per atom) at about 700 °C in the Joyo. The change of the fracture toughness by the irradiation was correlated with nanostructural evolution by the irradiation, which was examined by transmission electron microscopy. The observed degradation of fracture toughness in Si_3N_4 is thought to be due to the relatively high density of small-sized of the irradiation induced defects, which should be resulted from a large amount of transmutation gases of hydrogen and helium. Observed improvement of fracture toughness in MgAl_2O_4 was due to the blocking of crack propagation by the antiphase boundaries. The radiation effects affected the fracture toughness of yttria stabilized zirconia at 55 dpa, suggesting that the generated high density voids would affect the propagation of cracks. - Highlights: • Si_3N_4, MgAl_2O_4 and YSZ were neutron irradiated up to 55dpa around 700 °C in the Joyo. • They are candidate ceramics for the inert matrices of nuclear fuels in the fast reactors. • The irradiation enhanced the fracture toughness of MgAl_2O_4 and YSZ, while degraded that of Si_3N_4. • The toughness changes were correlated with radiation induced defects and transmutation gases.
Key technology for (V)HTR: laser beam joining of SiC

International Nuclear Information System (INIS)

Knorr, J.; Lippmann, W.; Reinecke, A.M.; Wolf, R.; Rasper, R.; Kerber, A.; Wolter, A.

2005-01-01

Laser beam joining has numerous advantages over other methods presently known. After having been developed successful for brazing silicon carbide for high temperature applications, this technology is now also available for silicon nitride. Thus the field of application of SiC and Si 3 N 4 which are very interesting materials for the nuclear sector is considerably extended thanks to this new technology. Ceramic encapsulation of fuel and absorber increases the margins for operation at very high temperatures. Additionally, without ceramic encapsulation of the main core components, it will be difficult to continue claiming non-catastrophic behaviour for the (V)HTR. (orig.)
Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures

International Nuclear Information System (INIS)

Lin, Chih-Ming; Lien, Wei-Cheng; Riekkinen, Tommi; Senesky, Debbie G; Pisano, Albert P; Chen, Yung-Yu; Felmetsger, Valery V

2013-01-01

Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s −1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments. (paper)

High-energy electron beams for ceramic joining

Science.gov (United States)

Turman, Bob N.; Glass, S. J.; Halbleib, J. A.; Helmich, D. R.; Loehman, Ron E.; Clifford, Jerome R.

1995-03-01

Joining of structural ceramics is possible using high melting point metals such as Mo and Pt that are heated with a high energy electron beam, with the potential for high temperature joining. A 10 MeV electron beam can penetrate through 1 cm of ceramic, offering the possibility of buried interface joining. Because of transient heating and the lower heat capacity of the metal relative to the ceramic, a pulsed high power beam has the potential for melting the metal without decomposing or melting the ceramic. We have demonstrated the feasibility of the process with a series of 10 MeV, 1 kW electron beam experiments. Shear strengths up to 28 MPa have been measured. This strength is comparable to that reported in the literature for bonding silicon nitride (Si3N4) to molybdenum with copper-silver-titanium braze, but weaker than that reported for Si3N4 - Si3N4 with gold-nickel braze. The bonding mechanism appears to be formation of a thin silicide layer. Beam damage to the Si3N4 was also assessed.
Ab initio chemical kinetics for SiH3 reactions with Si(x)H2x+2 (x = 1-4).

Science.gov (United States)

Raghunath, P; Lin, M C

2010-12-30

Gas-phase kinetics and mechanisms of SiH(3) reactions with SiH(4), Si(2)H(6), Si(3)H(8), and Si(4)H(10), processes of relevance to a-Si thin-film deposition, have been investigated by ab initio molecular orbital and transition-state theory (TST) calculations. Geometric parameters of all the species involved in the title reactions were optimized by density functional theory at the B3LYP and BH&HLYP levels with the 6-311++G(3df,2p) basis set. The potential energy surface of each reaction was refined at the CCSD(T)/6-311++G(3df,2p) level of theory. The results show that the most favorable low energy pathways in the SiH(3) reactions with these silanes occur by H abstraction, leading to the formation of SiH(4) + Si(x)H(2x+1) (silanyl) radicals. For both Si(3)H(8) and n-Si(4)H(10) reactions, the lowest energy barrier channels take place by secondary Si-H abstraction, yielding SiH(4) + s-Si(3)H(7) and SiH(4) + s-Si(4)H(9), respectively. In the i-Si(4)H(10) reaction, tertiary Si-H abstraction has the lowest barrier producing SiH(4) + t-Si(4)H(9). In addition, direct SiH(3)-for-X substitution reactions forming Si(2)H(6) + X (X = H or silanyls) can also occur, but with significantly higher reaction barriers. A comparison of the SiH(3) reactions with the analogous CH(3) reactions with alkanes has been made. The rate constants for low-energy product channels have been calculated for the temperature range 300-2500 K by TST with Eckart tunneling corrections. These results, together with predicted heats of formation of various silanyl radicals and Si(4)H(10) isomers, have been tabulated for modeling of a-Si:H film growth by chemical vapor deposition.
A Thermally Tunable 1 × 4 Channel Wavelength Demultiplexer Designed on a Low-Loss Si3N4 Waveguide Platform

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Mohammed Shafiqul Hai

2015-11-01

Full Text Available A thermally tunable 1 × 4 channel optical demultiplexer was designed using an ultra low-loss Si3N4 (propagation loss ~3.1 dB/m waveguide. The demultiplexer has three 2 × 2 Mach-Zehnder interferometers (MZI, where each of the MZI contains two 2 × 2 general interference based multimode interference (MMI couplers. The MMI couplers exhibit −3.3 dB to −3.7 dB power division ratios over a 50 nm wavelength range from 1530 nm to 1580 nm. The chrome-based (Cr heaters placed on the delay arms of the MZI filters enable thermal tuning to control the optical phase shift in the MZI delay arms. This facilitates achieving moderately low crosstalk (14.5 dB between the adjacent channels. The optical insertion loss of the demultiplexer per channel is between 1.5 dB to 2.2 dB over the 1550 nm to 1565 nm wavelength range. Error free performance (BER of 10−12 is obtained for all four 40 Gb/s data rate channels. The optical demultiplexer is an important tool towards building photonic integrated circuits with complex optical signal processing functionalities in the low-loss Si3N4 waveguide platform.
A note on the Sumerian expression SI-ge4-de3/dam

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Widell, Magnus

2002-12-01

Full Text Available The expression SI-ge4-dam/de3 appears in some of the loan documents of the Ur III period where it was used to establish the interest rate or the loan fee. In addition, it is sometimes preceded by ki-ba 'in its/this place/ground' or, in some cases, ma2 -a 'in the boat'. The regular verb SI.g was closely related, perhaps even synonymous with, the reduplication verb ḡar/ḡa2-ḡa2 'to put' or 'to place'. While it may be concluded that SI-ge4-dam/de3 had nothing to do with the verb si 'to fill' or gi4 'to return', the correct analysis of the expression remains somewhat uncertain. The article proposes that the SI should be read se and understood as a phonetic writing for the regular verb se3.g 'to put', 'to place'. The combination of the verb with the ki-ba may suggest that a more parochial form of keeping products existed side by side with the large centralized granaries and storehouses of the city.La expresión SI-ge4-dam/de3 aparece en algunos contratos de préstamo del período de Ur III, donde se empleaba para determinar el interés de dicho préstamo. Por otra parte, este término se hallaba a veces precedido de ki-ba 'en su/este lugar/suelo', y en algunos casos por ma2 -a 'en la barca'. El verbo regular SI.g está muy relacionado (quizás es incluso sinónimo con el verbo de la clase de la reduplicación ḡar/ḡa2-ḡa2 'poner' o 'colocar'. Mientras que puede concluirse que SI-ge4-dam/de3 no tiene nada que ver con el verbo si 'llenar', ni con gi4 'regresar, devolver', el análisis correcto de la expresión sigue siendo, de algún modo, incierto. En el artículo se propone que SI puede leerse como se , entendiéndolo como una escritura fonética del verbo regular se3.g 'poner', 'colocar'. La combinación del verbo con ki-ba podría indicar que, junto a los grandes graneros y almacenes centrales de la ciudad, había un modo distinto y más modesto de conservar los productos.
Characterization of GaN P-N Junction Grown on Si (111) Substrate by Plasma-assisted Molecular Beam Epitaxy

International Nuclear Information System (INIS)

Rosfariza Radzali; Rosfariza Radzali; Mohd Anas Ahmad; Zainuriah Hassan; Norzaini Zainal; Kwong, Y.F.; Woei, C.C.; Mohd Zaki Mohd Yusoff; Mohd Zaki Mohd Yusoff

2011-01-01

In this report, the growth of GaN pn junction on Si (111) substrate by plasma assisted molecular beam epitaxy (PAMBE) is presented. Doping of GaN p-n junction has been carried out using Si and Mg as n-type dopant and p-type dopants, respectively. The sample had been characterized by PL, Raman spectroscopy, HR-XRD and SEM. PL spectrum showed strong band edge emission of GaN at ∼364 nm, indicating good quality of the sample. The image of SEM cross section of the sample showed sharp interfaces. The presence of peak ∼657 cm -1 in Raman measurement exhibited successful doping of Mg in the sample. (author)
Atomic structure and potential energy of β-Si3N4/diamond interface in the process of detachment: A first-principles study

Science.gov (United States)

Chen, Naichao; Chen, Yingchao; Ai, Jun; Li, Cheng; He, Ping; Ren, Jianxing; Zhu, Quanjun

2018-03-01

Peeling is regarded as a main technique barrier for the application of coating. Many factors affects the peeling of coating. Among them, the interfacial properties between coating and substrate plays a vital role. In this work, the β-Si3N4/diamond interface is conducted as the sample to study the changes in atomic structure and potential energy in the process of detachment by the first-principles calculations. The β-Si3N4/diamond (2 × 2) crystal unit is used as the calculated model. The detachment is simulated by moving up β-Si3N4 far from diamond by the 0.1 Å of each step. The results show that in the beginning of detachment, the bonds in the interface keep a constant length, rather than extension like spring. When the distance between β-Si3N4 and diamond reaches a certain distance, the interfacial bonds would suddenly break, and the elongated β-Si3N4 resumes its original statues indicating that the interface between two surfaces may exist a threshold value to control the peeling. When the external force is less than this threshold value, the peeling of coating would not occur. However, once the external force is greater than this one, the peeling would immediately present. The interface presents the brittle failure in the process of detachment, which is in good agreement with the experimental observation. Meanwhile, the different physical properties between van der Waals and quantum effects lead to the transient status in the process of detachment, where although the interfacial bonds are broken, the adhesive strength is still strong due to its low negative adsorption energy.
Crystal structure refinement of α-Si3N4 using synchrotron radiation powder diffraction data: unbiased refinement strategy

International Nuclear Information System (INIS)

Toraya, H.

2000-01-01

The crystal structure of α-silicon nitride (Si 3 N 4 ) was refined by the Rietveld method using synchrotron radiation powder diffraction data (wavelength = 1.2 A) collected at station BL-4B2 in the photon factory. A refinement procedure that adopted a new weight function, w = 1/Y o e (Y o is the observed profile intensity and e ≅ 2), for the least-squares fitting [Toraya (1998). J. Appl. Cryst. 31, 333-343] was studied. The most reasonable structural parameters were obtained with e = 1.7. Crystal data of α-Si 3 N 4 : trigonal, P31c, a = 7.75193 (3), c = 5.61949 (4) A, V = 292.447 (3) A 3 , Z = 4; R p = 5.08, R wp = 6.50, R B = 3.36, R F = 2.26%. The following five factors are considered equally important for deriving accurate structural parameters from powder diffraction data: (i) sufficiently large sin θ/λ range of >0.8 A -1 ; (ii) adequate counting statistics; (iii) correct profile model; (iv) proper weighting on observations to give a uniform distribution of the mean weighted squared residuals; (v) high-angular-resolution powder diffraction data. (orig.)
Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Morita, K.; Inomata, Y.; Suemasu, T.

2006-01-01

The electrical properties and optical absorption (OA) spectra of undoped BaSi 2 films grown by molecular beam epitaxy were investigated The electron density and mobility of BaSi 2 grown epitaxially on Si(111) were 5 x 10 15 cm -3 and 820 cm 2 /V.s at room temperature, respectively. The conduction-band discontinuity at the BaSi 2 /Si heterojunction was estimated to be 0.7 eV from the current-voltage characteristics of n-BaSi 2 /n-Si isotype diodes. OA spectra were measured on polycrystalline BaSi 2 films grown on transparent fused silica substrates with predeposited polycrystalline Si layer. The indirect absorption edge was derived to be 1.3 eV, and the optical absorption coefficient reached 10 5 cm -1 at 1.5 eV
New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications

Science.gov (United States)

Razavi, S. M.; Tahmasb Pour, S.; Najari, P.

2018-06-01

New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT) and lower region is AlGaN with heavier doping compared to barrier layer. Upper region in SI-HEMT and UN-HEMT reduces peak electric field in the channel and then improves breakdown voltage considerably. Lower region increases electron density in the two dimensional electron gas (2-DEG) and enhances drain current significantly. For instance, saturated drain current in SI-HEMT is about 100% larger than that in the conventional one. Moreover, the maximum breakdown voltage in the proposed structures is 65 V. This value is about 30% larger than that in the conventional transistor (50 V). Also, suggested structure reduces short channel effect such as DIBL. The maximum gm is obtained in UN-HEMT and conventional devices. Proposed structures improve breakdown voltage and saturated drain current and then enhance maximum output power density. Maximum output power density in the new structures is about 150% higher than that in the conventional.
Ellipsometric study of GaN/AIN/Si(111) heterostructures grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Nabi, M. A. U.; Ashfaq, A.; Arshad, M. I.; Ali, A.; Mahmood, K.; Hasan, M. A.; Asghar, M.

2013-01-01

GaN and related structures attracted a great interest in the recent years for electronic and optoelectronic applications due to their promising properties. GaN is grown popularly on foreign substrates like sapphire and SiC. However, silicon due to its favourable properties attended the great attention of material scientists and researchers to utilize as substrate for heteroepitaxy of GaN based structures and devices. Silicon substrates are low cost, available in large diameters and have well characterized thermal and electrical properties. In this study, GaN/AlN/Si(111) heterostructures were grown by molecular beam epitaxy. We performed x-ray diffraction spectroscopy and spectroscopic ellipsometry on these samples to study their structural and optical properties. XRD measurements performed on these samples revealed the presence of high quality GaN films as well as the presence of AlN buffer layer with the following miller indices: GaN (002), GaN (004), GaN (006) and GaN (110) along with Si peak of phase (111). The ellipsometric data obtained were used to characterize the GaN/Si samples as a function of film thickness. Refractive index, extinction coefficient and dielectric constant were calculated by the measured data. (author)
In-beam γ-ray spectroscopy of 38,40,42Si

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Matsushita M.

2014-03-01

Full Text Available Excited states in the nuclei 38,40,42 Si have been studied using in-beam Γ-ray spectroscopy following multi-nucleon removal reactions to investigate the systematics of excitation energies along the Z=14 isotopic chain. The most probable candidates for the transition from the yrast 4+ state were tentatively assigned among several γ lines newly observed in the present study. The energy ratios between the 21+ and 41+ states were obtained to be 2.09(5, 2.56(5 and 2.93(5 for 38,40,42Si, respectively, indicating a rapid development of deformation in Si isotopes from N=24 to, at least, N=28.
AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

International Nuclear Information System (INIS)

Kipshidze, G.; Kuryatkov, V.; Borisov, B.; Holtz, M.; Nikishin, S.; Temkin, H.

2002-01-01

Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4x10 17 cm -3 , with a mobility of 8 cm2/Vs, is measured in Al 0.4 Ga 0.6 N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm
Synthesis of the (N2)3- radical from Y2+ and its protonolysis reactivity to form (N2H2)2- via the Y[N(SiMe3)2]3/KC8 reduction system.

Science.gov (United States)

Fang, Ming; Lee, David S; Ziller, Joseph W; Doedens, Robert J; Bates, Jefferson E; Furche, Filipp; Evans, William J

2011-03-23

Examination of the Y[N(SiMe(3))(2)](3)/KC(8) reduction system that allowed isolation of the (N(2))(3-) radical has led to the first evidence of Y(2+) in solution. The deep-blue solutions obtained from Y[N(SiMe(3))(2)](3) and KC(8) in THF at -35 °C under argon have EPR spectra containing a doublet at g(iso) = 1.976 with a 110 G hyperfine coupling constant. The solutions react with N(2) to generate (N(2))(2-) and (N(2))(3-) complexes {[(Me(3)Si)(2)N](2)(THF)Y}(2)(μ-η(2):η(2)-N(2)) (1) and {[(Me(3)Si)(2)N](2)(THF)Y}(2)(μ-η(2):η(2)-N(2))[K(THF)(6)] (2), respectively, and demonstrate that the Y[N(SiMe(3))(2)](3)/KC(8) reaction can proceed through an Y(2+) intermediate. The reactivity of (N(2))(3-) radical with proton sources was probed for the first time for comparison with the (N(2))(2-) and (N(2))(4-) chemistry. Complex 2 reacts with [Et(3)NH][BPh(4)] to form {[(Me(3)Si)(2)N](2)(THF)Y}(2)(μ-N(2)H(2)), the first lanthanide (N(2)H(2))(2-) complex derived from dinitrogen, as well as 1 as a byproduct, consistent with radical disproportionation reactivity.
Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures

Science.gov (United States)

Colston, Gerard; Myronov, Maksym

2017-11-01

Cubic silicon carbide (3C-SiC) offers an alternative wide bandgap semiconductor to conventional materials such as hexagonal silicon carbide (4H-SiC) or gallium nitride (GaN) for the detection of UV light and can offer a closely lattice matched virtual substrate for subsequent GaN heteroepitaxy. As 3C-SiC can be heteroepitaxially grown on silicon (Si) substrates its optical properties can be manipulated by controlling the thickness and doping concentrations. The optical properties of 3C-SiC epilayers have been characterized by measuring the transmission of light through suspended membranes. Decreasing the thickness of the 3C-SiC epilayers is shown to shift the absorbance edge to lower wavelengths, a result of the indirect bandgap nature of silicon carbide. This property, among others, can be exploited to fabricate very low-cost, tuneable 3C-SiC based UV photodetectors. This study investigates the effect of thickness and doping concentration on the optical properties of 3C-SiC epilayers grown at low temperatures by a standard Si based growth process. The results demonstrate the potential photonic applications of 3C-SiC and its heterogeneous integration into the Si industry.
Sequence of phase transitions in (NH4)3SiF7.

Science.gov (United States)

Mel'nikova, S V; Molokeev, M S; Laptash, N M; Pogoreltsev, E I; Misyul, S V; Flerov, I N

2017-02-21

Single crystals of silicon double salt (NH 4 ) 3 SiF 7 = (NH 4 ) 2 SiF 6 ·NH 4 F = (NH 4 ) 3 [SiF 6 ]F were grown and studied by the methods of polarization optics, X-ray diffraction and calorimetry. A sequence of symmetry transformations with the temperature change was established: P4/mbm (Z = 2) (G 1 ) ↔ Pbam (Z = 4) (G 2 ) ↔ P2 1 /c (Z = 4) (G 3 ) ↔ P1[combining macron] (Z = 4) (G 4 ) ↔ P2 1 /c (Z = 8) (G 5 ). Crystal structures of different phases were determined. The experimental data were also interpreted by a group-theoretical analysis of the complete condensate of order parameters taking into account critical and noncritical atomic displacements. Strengthening of the N-HF hydrogen bonds can be a driving force of the observed phase transitions.
Development and characterization of AlCrN coated Si3N4 ceramic cutting tool

International Nuclear Information System (INIS)

Souza, J.V.C.; Nono, M.C.A.; Machado, J.P.B.; Silva, O.M.M.; Sa, F.C.L.

2010-01-01

Ceramic cutting tools are showing a growing market perspective in terms of application on machining operations due to their high hardness, wear resistance, and machining without a cutting fluid, therefore are good candidates for cast iron and Nickel superalloys machining. The objective of the present paper was the development of Si 3 N 4 based ceramic cutting insert, characterization of its physical and mechanical properties, and subsequent coating with AlCrN using a PVD method. The characterization of the coating was made using an optical profiler, XRD, AFM and microhardness tester. The results showed that the tool presented a fracture toughness of 6,43 MPa.m 1/2 and hardness of 16 GPa. The hardness reached 31 GPa after coating. The machining tests showed an improvement on work piece roughness when machining with coated insert, in comparison with the uncoated cutting tool. Probably this fact is related to hardness, roughness and topography of AlCrN. (author)
Feasibility of ceramic joining with high energy electron beams

International Nuclear Information System (INIS)

Turman, B.N.; Glass, S.J.; Halbleib, J.A.; Helmich, D.R.; Loehman, R.E.; Clifford, J.R.

1995-01-01

Joining structural ceramics is possible using high melting point metals such as Mo and Pt that are heated with a high energy electron beam, with the potential for producing joints with high temperature capability. A 10 MeV electron beam can penetrate through 1 cm of ceramic, offering the possibility of buried interface joining. Because of transient heating and the lower heat capacity of the metal relative to the ceramic, a pulsed high power beam has the potential for melting the metal without decomposing or melting the adjacent ceramic. The authors have demonstrated the feasibility of the process with a series of 10 MeV, 1 kW electron beam experiments. Shear strengths up to 28 NTa have been measured for Si 3 N 4 -Mo-Si 3 N 4 . These modest strengths are due to beam non-uniformity and the limited area of bonding. The bonding mechanism appears to be a thin silicide reaction layer. Si 3 N 4 -Si 3 N 4 joints with no metal layer were also produced, apparently bonded an yttrium apatite grain boundary phase
Large scale synthesis of α-Si3N4 nanowires through a kinetically favored chemical vapour deposition process

Science.gov (United States)

Liu, Haitao; Huang, Zhaohui; Zhang, Xiaoguang; Fang, Minghao; Liu, Yan-gai; Wu, Xiaowen; Min, Xin

2018-01-01

Understanding the kinetic barrier and driving force for crystal nucleation and growth is decisive for the synthesis of nanowires with controllable yield and morphology. In this research, we developed an effective reaction system to synthesize very large scale α-Si3N4 nanowires (hundreds of milligrams) and carried out a comparative study to characterize the kinetic influence of gas precursor supersaturation and liquid metal catalyst. The phase composition, morphology, microstructure and photoluminescence properties of the as-synthesized products were characterized by X-ray diffraction, fourier-transform infrared spectroscopy, field emission scanning electron microscopy, transmission electron microscopy and room temperature photoluminescence measurement. The yield of the products not only relates to the reaction temperature (thermodynamic condition) but also to the distribution of gas precursors (kinetic condition). As revealed in this research, by controlling the gas diffusion process, the yield of the nanowire products could be greatly improved. The experimental results indicate that the supersaturation is the dominant factor in the as-designed system rather than the catalyst. With excellent non-flammability and high thermal stability, the large scale α-Si3N4 products would have potential applications to the improvement of strength of high temperature ceramic composites. The photoluminescence spectrum of the α-Si3N4 shows a blue shift which could be valued for future applications in blue-green emitting devices. There is no doubt that the large scale products are the base of these applications.
Development and characterization of AlCrN coated Si{sub 3}N{sub 4} ceramic cutting tool; Desenvolvimento e caracterizacao de ferramentas ceramicas de Si{sub 3}N{sub 4} revestidas com AlCrN

Energy Technology Data Exchange (ETDEWEB)

Souza, J.V.C.; Nono, M.C.A.; Machado, J.P.B., E-mail: vitor@las.inpe.b [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil); Silva, O.M.M. [Centro Tecnico de Aeronautica (CTA-IAE/AMR), Sao Jose dos Campos, SP (Brazil). Inst. de Aeronautica e Espaco. Div. de Materiais; Pimenta, M. [Balzers, Jundiai, SP (Brazil); Sa, F.C.L. [Centro Universitario de Volta Redonda (UNIFOA), RJ (Brazil)

2010-07-01

Ceramic cutting tools are showing a growing market perspective in terms of application on machining operations due to their high hardness, wear resistance, and machining without a cutting fluid, therefore are good candidates for cast iron and Nickel superalloys machining. The objective of the present paper was the development of Si{sub 3}N{sub 4} based ceramic cutting insert, characterization of its physical and mechanical properties, and subsequent coating with AlCrN using a PVD method. The characterization of the coating was made using an optical profiler, XRD, AFM and microhardness tester. The results showed that the tool presented a fracture toughness of 6,43 MPa.m{sup 1/2} and hardness of 16 GPa. The hardness reached 31 GPa after coating. The machining tests showed an improvement on work piece roughness when machining with coated insert, in comparison with the uncoated cutting tool. Probably this fact is related to hardness, roughness and topography of AlCrN. (author)
Study of gaseous interactions in carbon nanotube field-effect transistors through selective Si3N4 passivation

International Nuclear Information System (INIS)

Peng Ning; Zhang Qing; Tan, O K; Marzari, Nicola

2008-01-01

Carbon nanotube field-effect transistors with Si 3 N 4 passivated source and drain contacts and exposed carbon nanotube channel show n-type characteristics in air. In contrast, by passivating only the source contact, a diode-like behavior with a maximum current rectification ratio of 4.6 x 10 3 is observed. The rectifying characteristic vanishes in a vacuum but recovers once the devices are exposed to air. From our experiments, key parameters, such as critical gas pressure, adsorption energy of oxygen molecules and the contact barrier height modulation, can be obtained for studying the gaseous interaction in the carbon nanotube devices.

Improvement of photoluminescence properties and thermal stability of Y{sub 2.9}Ce{sub 0.1}Al{sub 5−x}Si{sub x}O{sub 12} phosphors with Si{sub 3}N{sub 4} addition

Energy Technology Data Exchange (ETDEWEB)

Zhang, Fangfang [College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Song, Kaixin, E-mail: kxsong@hdu.edu.cn [College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Jiang, Jun [Ningbo Institute of Materials Technologies and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Wu, Song; Zheng, Peng [College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Huang, Qingming [Instrument Analysis and Testing Center, Fuzhou University, Fuzhou 350002 (China); Xu, Junming; Qin, Huibin [College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China)

2014-12-05

Highlights: • Y{sub 2.9}Ce{sub 0.1}Al{sub 5−x}Si{sub x}O{sub 12} phosphors were prepared by solid-state reaction in reduced air ambience. • Si{sup 4+} could be incorporated into the host lattice of Y{sub 3}Al{sub 5}O{sub 12} through partial occupation of the Al{sup 3+} sites. • Si{sub 3}N{sub 4} addition can improve photoluminescence efficiency and thermal stability of Y{sub 3}Al{sub 5}O{sub 12}:Ce. - Abstract: A series of Si{sub 3}N{sub 4} doping Y{sub 2.9}Ce{sub 0.1}Al{sub 5−x}Si{sub x}O{sub 12−3x/2}N{sub 4x/3} phosphors were prepared by solid-state reaction in 95%N{sub 2}–5%H{sub 2} reduced air ambience. The XRD characteristics plus Rietveld refinement results shows that the as-sintered powders are unique crystal phase with the same crystal structure of Y{sub 3}Al{sub 5}O{sub 12} (PDF No. 79-1891). The N element was not detected by the analysis of X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray spectrum (EDS). The photoluminescence spectra (PL and PLE) tests show that the exciting and emitting intensity of PLE and PL gradually increase due to the increase of Si{sub 3}N{sub 4} concentration. Meanwhile, the phosphorescence decay times are prolonged from 45 ns (x = 0) to 78 ns (x = 0.3), under the monitor of 530 nm wavelength. The thermoluminescence tests (TL) confirm the thermal stability of as-phosphors with Si{sub 3}N{sub 4} addition is much better than that of the pristine Y{sub 2.9}Ce{sub 0.1}Al{sub 5}O{sub 12} phosphors.
Improvement of photoluminescence properties and thermal stability of Y2.9Ce0.1Al5−xSixO12 phosphors with Si3N4 addition

International Nuclear Information System (INIS)

Zhang, Fangfang; Song, Kaixin; Jiang, Jun; Wu, Song; Zheng, Peng; Huang, Qingming; Xu, Junming; Qin, Huibin

2014-01-01

Highlights: • Y 2.9 Ce 0.1 Al 5−x Si x O 12 phosphors were prepared by solid-state reaction in reduced air ambience. • Si 4+ could be incorporated into the host lattice of Y 3 Al 5 O 12 through partial occupation of the Al 3+ sites. • Si 3 N 4 addition can improve photoluminescence efficiency and thermal stability of Y 3 Al 5 O 12 :Ce. - Abstract: A series of Si 3 N 4 doping Y 2.9 Ce 0.1 Al 5−x Si x O 12−3x/2 N 4x/3 phosphors were prepared by solid-state reaction in 95%N 2 –5%H 2 reduced air ambience. The XRD characteristics plus Rietveld refinement results shows that the as-sintered powders are unique crystal phase with the same crystal structure of Y 3 Al 5 O 12 (PDF No. 79-1891). The N element was not detected by the analysis of X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray spectrum (EDS). The photoluminescence spectra (PL and PLE) tests show that the exciting and emitting intensity of PLE and PL gradually increase due to the increase of Si 3 N 4 concentration. Meanwhile, the phosphorescence decay times are prolonged from 45 ns (x = 0) to 78 ns (x = 0.3), under the monitor of 530 nm wavelength. The thermoluminescence tests (TL) confirm the thermal stability of as-phosphors with Si 3 N 4 addition is much better than that of the pristine Y 2.9 Ce 0.1 Al 5 O 12 phosphors
Study of SiNx:Hy passivant layers for AlGaN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Redondo-Cubero, A.; Gago, R.; Romero, M.F.; Gonzalez-Posada, F.; Brana, A.F.; Munoz, E.; Jimenez, A.

2008-01-01

In this work, hydrogenated silicon nitride (SiN x :H y ) grown by chemical vapour deposition as passivant layers for high electron mobility transistors (HEMT) have been studied. The film composition and bonding structure were determined by ion beam analysis and X-ray absorption spectroscopy techniques, respectively. The effects of gas precursors (SiH 4 /N 2 and SiH 4 /NH 3 ) and film/substrate interface on the film growth have been addressed. The growth on different substrates (Si, GaN, AlGaN), and the effects of plasma pre-treatments have been studied before the growth and the film growth evolution. Results yield no significant differences in all the analysed samples. This points out the relevant role of SiHn radicals as growth precursor species and that intrinsic characteristics of the SiNx:Hy layers are not affected by the film/substrate interface. Hence, improved performance of HEMT with surface plasma pre-treatments before passivation should be related to extrinsic mechanisms (such as creation of defects in AlGaN surface, removal of the surface contamination or ion-induced roughness). (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

International Nuclear Information System (INIS)

Mizerov, A. M.; Kladko, P. N.; Nikitina, E. V.; Egorov, A. Yu.

2015-01-01

The results of studies of the growth kinetics of AlN layers during molecular beam epitaxy with the plasma activation of nitrogen using Si (111) substrates are presented. The possibility of the growth of individual AlN/Si (111) nanocolumns using growth conditions with enrichment of the surface with metal near the formation mode of Al drops, at a substrate temperature close to maximal, during molecular beam epitaxy with the plasma activation of nitrogen (T s ≈ 850°C) is shown. The possibility of growing smooth AlN layers on a nanocolumnar AlN/Si (111) buffer with the use of T s ≈ 750°C and growth conditions providing enrichment with metal is shown
Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

Energy Technology Data Exchange (ETDEWEB)

Mizerov, A. M., E-mail: mizerov@beam.ioffe.ru; Kladko, P. N.; Nikitina, E. V.; Egorov, A. Yu. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Centre (Russian Federation)

2015-02-15

The results of studies of the growth kinetics of AlN layers during molecular beam epitaxy with the plasma activation of nitrogen using Si (111) substrates are presented. The possibility of the growth of individual AlN/Si (111) nanocolumns using growth conditions with enrichment of the surface with metal near the formation mode of Al drops, at a substrate temperature close to maximal, during molecular beam epitaxy with the plasma activation of nitrogen (T{sub s} ≈ 850°C) is shown. The possibility of growing smooth AlN layers on a nanocolumnar AlN/Si (111) buffer with the use of T{sub s} ≈ 750°C and growth conditions providing enrichment with metal is shown.
Blue-emitting LaSi3N5:Ce3+ fine powder phosphor for UV-converting white light-emitting diodes

Science.gov (United States)

Suehiro, Takayuki; Hirosaki, Naoto; Xie, Rong-Jun; Sato, Tsugio

2009-08-01

We have synthesized the pure ternary nitride phosphor, LaSi3N5:Ce3+ from the multicomponent oxide system La2O3-CeO2-SiO2, by using the gas-reduction-nitridation method. Highly pure, single-phase LaSi3N5:Ce3+ powders possessing particle sizes of ˜0.4-0.6 μm were obtained with the processing temperature ≤1500 °C. The synthesized LaSi3N5:Ce3+ exhibits tunable blue broadband emission with the dominant wavelength of 464-475 nm and the external quantum efficiency of ˜34%-67% under excitation of 355-380 nm. A high thermal stability of LaSi3N5:Ce3+ compared to the existing La-Si-O-N hosts was demonstrated, indicating the promising applicability as a blue-emitting phosphor for UV-converting white light-emitting diodes.
3Y-TZP/Si2N2O composite obtained by pressureless sintering

International Nuclear Information System (INIS)

Santos, Carlos Augusto Xavier

2006-01-01

Zirconia 3YTZP presents excellent properties at room temperature. These properties decrease as the temperature increases because high temperature acts negatively over the stress induced transformation toughening in the matrix. The addition of Si 3 N 4 and SiC in a Y-TZP matrix is very interesting because leads to formation of silicon oxynitride and it increases the mechanical properties like toughness and hardness. Certainly the mechanical properties increment is limited by several difficulties which have appeared during processing and heating of these materials. This paper studies the Y-TZP/Si 2 N 2 0 pressureless sintered composite, under different temperatures, showing the behavior of 20 vol %Si 3 N 4 -SiC when added in YTZP matrix and heated under no pressure system. Al 2 O 3 and Y 2 O 3 were used as sintering aids. The mixture was milled and molded by cold isostatic pressure. Samples were heated at 1500 deg, 1600 deg and 17000 deg C x 2h without pressure under atmospheric conditions using Si 3 N 4 bed-powder. Samples were characterized by XRD and density, hardness, toughness, bending strength were measured. The structure of the material was observed in SEMITEM/EPMA to verify the distribution and composition of the materials in the composite and the contact between filler surface and the matrix. The formation of SiON 2 was observed in the sintered material due to reaction between both nitride and carbide with Y - TZP matrix. Furthermore the material showed an increment of both hardness and toughness as temperature increases. The samples presented considerable resistance to oxidation below 1000 deg C. (author)
Dislocation core structures in Si-doped GaN

International Nuclear Information System (INIS)

Rhode, S. L.; Fu, W. Y.; Sahonta, S.-L.; Kappers, M. J.; Humphreys, C. J.; Horton, M. K.; Pennycook, T. J.; Dusane, R. O.; Moram, M. A.

2015-01-01

Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10 8 and (10 ± 1) × 10 9 cm −2 . All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN
Dislocation core structures in Si-doped GaN

Energy Technology Data Exchange (ETDEWEB)

Rhode, S. L., E-mail: srhode@imperial.ac.uk; Fu, W. Y.; Sahonta, S.-L.; Kappers, M. J.; Humphreys, C. J. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Horton, M. K. [Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Pennycook, T. J. [SuperSTEM, STFC Daresbury Laboratories, Warrington WA4 4AD (United Kingdom); Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Dusane, R. O. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076 (India); Moram, M. A. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom)

2015-12-14

Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10{sup 8} and (10 ± 1) × 10{sup 9} cm{sup −2}. All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN.
Chemical vapor deposition of NiSi using Ni(PF3)4 and Si3H8

International Nuclear Information System (INIS)

Ishikawa, M.; Muramoto, I.; Machida, H.; Imai, S.; Ogura, A.; Ohshita, Y.

2007-01-01

NiSi x films were deposited using chemical vapor deposition (CVD) with a Ni(PF 3 ) 4 and Si 3 H 8 /H 2 gas system. The step coverage quality of deposited NiSi x was investigated using a horizontal type of hot-wall low pressure CVD reactor, which maintained a constant temperature throughout the deposition area. The step coverage quality improved as a function of the position of the gas flow direction, where PF 3 gas from decomposition of Ni(PF 3 ) 4 increased. By injecting PF 3 gas into the Ni(PF 3 ) 4 and Si 3 H 8 /H 2 gas system, the step coverage quality markedly improved. This improvement in step coverage quality naturally occurred when PF 3 gas was present, indicating a strong relationship. The Si/Ni deposit ratio at 250 deg. C is larger than at 180 deg. C. It caused a decreasing relative deposition rate of Ni to Si. PF 3 molecules appear to be adsorbed on the surface of the deposited film and interfere with faster deposition of active Ni deposition species
Photoluminescence analysis of Ce3+:Zn2SiO4 & Li++ Ce3+:Zn2SiO4: phosphors by a sol-gel method

Science.gov (United States)

Babu, B. Chandra; Vandana, C. Sai; Guravamma, J.; Rudramadevi, B. Hemalatha; Buddhudu, S.

2015-06-01

Here, we report on the development and photoluminescence analysis of Zn2SiO4, Ce3+:Zn2SiO4 & Li+ + Ce3+: Zn2SiO4 novel powder phosphors prepared by a sol-gel technique. The total amount of Ce3+ ions was kept constant in this experiment at 0.05 mol% total doping. The excitation and emission spectra of undoped (Zn2SiO4) and Ce3+ doped Zn2SiO4 and 0.05 mol% Li+ co-doped samples have been investigated. Cerium doped Zn2SiO4 powder phosphors had broad blue emission corresponding to the 2D3/2→2FJ transition at 443nm. Stable green-yellow-red emission has been observed from Zn2SiO4 host matrix and also we have been observed the enhanced luminescence of Li+ co-doped Zn2SiO4:Ce3+. Excitation and emission spectra of these blue luminescent phosphors have been analyzed in evaluating their potential as luminescent screen coating phosphors.
LiCa{sub 3}Si{sub 2}N{sub 5} - A Lithium nitridosilicate with a [Si{sub 2}N{sub 5}]{sup 7-} double-chain

Energy Technology Data Exchange (ETDEWEB)

Lupart, Saskia; Schnick, Wolfgang [Department Chemie, Lehrstuhl fuer Anorganische Festkoerperchemie, Ludwig-Maximilians-Universitaet Muenchen (Germany)

2012-10-15

The lithium nitridosilicate LiCa{sub 3}Si{sub 2}N{sub 5} was synthesized by the reaction of calcium with Si(NH){sub 2} and Li{sub 3}N in weld shut tantalum ampoules at 900 C. The structure of LiCa{sub 3}Si{sub 2}N{sub 5} [space group C2/c, no. 15, a = 5.1454(10), b = 20.380(4), c = 10.357(2) Aa, β = 91.24(3) , wR{sub 2} = 0.1084, 863 data, 102 parameters] consists of [Si{sub 2}N{sub 5}]{sup 7-} double-chains including edge-sharing tetrahedra. The lithium atoms in the crystal structure are situated in strands along the crystallographic b axis. Lattice energy calculations (MAPLE) and EDX measurements confirmed the electrostatic bonding interactions and the chemical composition. The {sup 29}Si and {sup 7}Li solid-state MAS NMR spectroscopic investigations are reported. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Theoretical investigation on structural stability of InN thin films on 3C-SiC(0 0 1)

International Nuclear Information System (INIS)

Ito, Takumi; Akiyama, Toru; Nakamura, Kohji; Ito, Tomonori

2008-01-01

The structural stability of InN thin films on 3C-SiC(0 0 1) substrate is systematically investigated based on an empirical interatomic potential, which incorporates electrostatic energy due to covalent bond charges and ionic charges. The calculated energy differences among coherently grown 3C-InN(0 0 1), 3C-InN(0 0 1) with misfit dislocations (MDs), and 2H-InN(0 0 0 1) imply that the coherently grown 3C-InN(0 0 1) is stable when the film thickness is less than 7 monolayers (MLs) while 2H-InN(0 0 0 1) is stabilized for the thickness beyond 8 MLs. This is because InN layers in 2H-InN(0 0 0 1) are fully relaxed by one MD. The analysis of atomic configuration at the 3C-InN(0 0 1)/3C-SiC(0 0 1) interfaces reveals that the coordination number of interfacial atoms is quite different from that in the bulk region. Thus, 3C-InN(0 0 1) with MDs on 3C-SiC(0 0 1) is always metastable over entire range of film thickness, consistent with the successful fabrication of 2H-InN(0 0 0 1) on 3C-SiC(0 0 1) by the molecular beam epitaxy. These results suggest that the mismatch in atomic arrangements at the interface crucially affects the structural stability of InN thin films on 3C-SiC(0 0 1) substrate
Luminescent Properties of Sr4Si3O8Cl4:Eu2+, Bi3+ Phosphors for Near UV InGaN-Based Light-Emitting-Diodes

Directory of Open Access Journals (Sweden)

Wangqing Shen

2015-12-01

Full Text Available Sr4Si3O8Cl4 co-doped with Eu2+, Bi3+ were prepared by the high temperature reaction. The structure and luminescent properties of Sr4Si3O8Cl4:Eu2+, Bi3+ were investigated. With the introduction of Bi3+, luminescent properties of these phosphors have been optimized. Compared with Sr3.90Si3O8Cl4:0.10Eu2+, the blue-green phosphor Sr3.50Si3O8Cl4:0.10Eu2+, 0.40Bi3+ shows stronger blue-green emission with broader excitation in near-UV range. Bright blue-green light from the LED means this phosphor can be observed by the naked eye. Hence, it may have an application in near UV LED chips.
Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Brown, April S.; Kim, Tong-Ho; Choi, Soojeong; Wu, Pae; Morse, Michael [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Moto, Akihiro [Innovation Core SEI, Inc., 3235 Kifer Road, Santa Clara, CA 95051 (United States)

2006-06-15

We have investigated the growth of InN films by plasma assisted molecular beam epitaxy on the Si-face of 6H-SiC(0001). Growth is performed under In-rich conditions using a two-step process consisting of the deposition of a thin, low-temperature 350 C InN buffer layer, followed by the subsequent deposition of the InN epitaxial layer at 450 C. The effect of buffer annealing is investigated. The structural and optical evolution of the growing layer has been monitored in real time using RHEED and spectroscopic ellipsometry. Structural, morphological, electrical and optic properties are discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Mechanical response of cross-ply Si3N4/BN fibrous monoliths under uniaxial and biaxial loading

International Nuclear Information System (INIS)

Singh, D.; Cruse, T. A.; Hermanson, D. J.; Goretta, K. C.; Zok, F. W.; McNulty, J. C.

2000-01-01

Mechanical properties of hot-pressed Si 3 N 4 /BN fibrous monoliths (FMs) were evaluated under ambient conditions in four-point and biaxial flexure modes. Effects of cell orientation, 0degree/90degree and ±45degree, on elastic modulus and fracture strength of the FMs were investigated. Fracture surfaces were examined by scanning electron microscopy
Ytterbium doped silicon clusters YbSi{sub n} (n = 4–10) and their anions: Structures, thermochemistry, and electron affinities

Energy Technology Data Exchange (ETDEWEB)

Xie, Xiaohong [School of Chemical Engineering, Inner Mongolia University of Technology, Hohhot 010051 (China); Hao, Dongsheng [School of Chemical Engineering, Inner Mongolia University of Technology, Hohhot 010051 (China); School of Mining and Technology, Inner Mongolia University of Technology, Hohhot 010051 (China); Yang, Jucai, E-mail: yangjc@imut.edu.cn [School of Chemical Engineering, Inner Mongolia University of Technology, Hohhot 010051 (China); School of Energy and Power Engineering, Inner Mongolia University of Technology, Hohhot 010051 (China)

2015-11-05

Highlights: • The ground-state structure of YbSi{sub n} and its anion is substitutional structure. • The four DFT AEAs are in excellent agreement with the experimental data. • Theoretical AEA of 2.33 eV of YbSi{sub 9} is more reasonable than the experimental 2.60 eV. • Hardness analysis reveals that doping Yb to Si{sub n} raises photochemical sensitivity. • Relative stabilities of YbSi{sub n} and their anions are examined. - Abstract: The structures, electron affinities, dissociation energies, hardness, and dipole moments of YbSi{sub n} (n = 4–10) and their anions were examined using B3LYP, TPSSh, PBE and wB97X methods. The lowest-energy structures can be regarded as replacing a Si of the ground-state structure of Si{sub n+1} with a Yb atom. The theoretical adiabatic electron affinities (AEAs) of YbSi{sub n} are in excellent agreement with experimental data. The average absolute errors from experiment are by 0.08, 0.07, 0.05 and 0.08 eV at the B3LYP, the TPSSh, the PBE and the wB97X levels, respectively. Theoretical AEAs of 2.33 ± 0.05 eV for YbSi{sub 9} are more reliable than the experimental value of 2.60 ± 0.05 eV. The hardness analysis reveals that doping Yb atom to Si{sub n} (n = 4–10) clusters raises the photochemical sensitivity. The dissociation energies of Yb atom from YbSi{sub n} and their anions were calculated to examine relative stabilities.
Epitaxial Gd2O3 on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power application

Science.gov (United States)

Ghosh, Kankat; Das, S.; Khiangte, K. R.; Choudhury, N.; Laha, Apurba

2017-11-01

We report structural and electrical properties of hexagonal Gd2O3 grown epitaxially on GaN/Si (1 1 1) and AlGaN/GaN/Si(1 1 1) virtual substrates. GaN and AlGaN/GaN heterostructures were grown on Si(1 1 1) substrates by plasma assisted molecular beam epitaxy (PA-MBE), whereas the Gd2O3 layer was grown by the pulsed laser ablation (PLA) technique. Initial structural characterizations show that Gd2O3 grown on III-nitride layers by PLA, exhibit a hexagonal structure with an epitaxial relationship as {{≤ft[ 0 0 0 1 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 0 0 0 1 \\right]}GaN} and {{≤ft[ 1 \\bar{1} 0 0 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 1 \\bar{1} 0 0 \\right]}GaN} . X-ray photoelectron measurements of the valence bands revealed that Gd2O3 exhibits band offsets of 0.97 eV and 0.4 eV, for GaN and Al0.3Ga0.7N, respectively. Electrical measurements such as capacitance-voltage and leakage current characteristics further confirm that epi-Gd2O3 on III-nitrides could be a potential candidate for future metal-oxide-semiconductor (MOS)-based transistors also for high power applications in radio frequency range.
pVT-Second Virial Coefficients B(T ), Viscosity η(T ), and Self-Diffusion ρD(T) of the Gases: BF3, CF4, SiF4, CCl4, SiCl4, SF6, MoF6, WF6, UF6, C(CH3)4, and Si(CH3)4 Determined by Means of an Isotropic Temperature-Dependent Potential

Science.gov (United States)

Zarkova, L.; Hohm, U.

2002-03-01

We present results on self-consistent calculations of second pVT-virial coefficients B(T), viscosity data η(T), and diffusion coefficients ρD(T) for eleven heavy globular gases: boron trifluoride (BF3), carbon tetrafluoride (CF4), silicon tetrafluoride (SiF4), carbon tetrachloride (CCl4), silicon tetrachloride (SiCl4), sulfur hexafluoride (SF6), molybdenum hexafluoride (MoF6), tungsten hexafluoride (WF6), uranium hexafluoride (UF6), tetramethyl methane (C(CH3)4, TMM), and tetramethyl silane (Si(CH3)4, TMS). The calculations are performed mainly in the temperature range between 200 and 900 K by means of isotropic n-6 potentials with temperature-dependent separation rm(T) and potential well depth ɛ(T). The potential parameters at T=0 K (ɛ, rm, n) and the enlargement of the first level radii δ are obtained solving an ill-posed problem of minimizing the squared deviations between experimental and calculated values normalized to their relative experimental error. The temperature dependence of the potential is obtained as a result of the influence of vibrational excitation on binary interactions. This concept of the isotropic temperature-dependent potential (ITDP) is presented in detail where gaseous SF6 will serve as an example. The ITDP is subsequently applied to all other gases. This approach and the main part of the results presented here have already been published during 1996-2000. However, in some cases the data are upgraded due to the recently improved software (CF4, SF6) and newly found experimental data (CF4, SiF4, CCl4, SF6).
UV and IR laser induced ablation of Al2O3/SiN:H and a-Si:H/SiN:H

Directory of Open Access Journals (Sweden)

Schutz-Kuchly T.

2014-01-01

Full Text Available Experimental work on laser induced ablation of thin Al2O3(20 nm/SiN:H (70 nm and a-Si:H (20 nm/SiN:H (70 nm stacks acting, respectively, as p-type and n-type silicon surface passivation layers is reported. Results obtained using two different laser sources are compared. The stacks are efficiently removed using a femtosecond infra-red laser (1030 nm wavelength, 300 fs pulse duration but the underlying silicon surface is highly damaged in a ripple-like pattern. This collateral effect is almost completely avoided using a nanosecond ultra-violet laser (248 nm wavelength, 50 ns pulse duration, however a-Si:H flakes and Al2O3 lace remain after ablation process.

Low-temperature amorphous boron nitride on Si0.7Ge0.3(001), Cu, and HOPG from sequential exposures of N2H4 and BCl3

Science.gov (United States)

Wolf, Steven; Edmonds, Mary; Sardashti, Kasra; Clemons, Max; Park, Jun Hong; Yoshida, Naomi; Dong, Lin; Nemani, Srinivas; Yieh, Ellie; Holmes, Russell; Alvarez, Daniel; Kummel, Andrew C.

2018-05-01

Low-temperature sequential exposures of N2H4 and BCl3 have been performed on Si0.3Ge0.7(001), Cu, and HOPG surfaces at 350 °C. A novel BN ALD process has been achieved on Si0.3Ge0.7(001) with 60 cycles of BN ALD producing a uniform, pinhole-free thin film with low contamination, as characterized with XPS and AFM. On Cu and Si0.3Ge0.7(001), XPS spectra indicated a near stoichiometric BN film. While AFM imaging indicated the deposition on Cu yielded nanometer-scale etching, conformal deposition was observed on Si0.3Ge0.7(001). The BN ALD also nucleated on inert HOPG via step edges. In situ STM imaging showed that cyclic exposures at 350 °C were able to decorate step edges with features ∼2 nm tall and ∼200 nm wide, indicating the propensity for BN to grow in the planar direction. The N2H4 and BCl3 ALD allows for the deposition of low oxygen, low carbon films, but to avoid etching, the growth should be nucleated by N2H4, since exposure to BCl3 can result in the formation of volatile Cl-containing surface species on many substrates. Therefore, the formation of a stable surface nitride prior to BCl3 exposure is necessary to prevent formation and desorption of volatile species from the substrate.
Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites.

Science.gov (United States)

Shevlyagin, A V; Goroshko, D L; Chusovitin, E A; Galkin, K N; Galkin, N G; Gutakovskii, A K

2015-10-05

By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p(+)-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 10(9) cm × Hz(1/2)/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.
First-principles quantum molecular calculations of structural and mechanical properties of TiN/SiN{sub x} heterostructures, and the achievable hardness of the nc-TiN/SiN{sub x} nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Ivashchenko, V.I., E-mail: ivash@ipms.kiev.ua [Institute of Problems of Material Science, National Academy of Science of Ukraine, Krzhyzhanosky Str. 3, 03142 Kyiv (Ukraine); Veprek, S., E-mail: stan.veprek@lrz.tum.de [Department of Chemistry, Technical University Munich, Lichtenbergstrasse 4, D-85747 Garching (Germany); Argon, A.S. [Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States); Turchi, P.E.A. [Lawrence Livermore National Laboratory (L-352), P.O. Box 808, Livermore, CA 94551 (United States); Gorb, L. [Badger Technical Services, LLC, Vicksburg, MS 39180 (United States); U.S. Army ERDC, Vicksburg, MS 39180 (United States); Hill, F. [U.S. Army ERDC, Vicksburg, MS 39180 (United States); Leszczynski, J. [Department of Chemistry and Biochemistry, Interdisciplinary Center for Nanotoxicity, Jackson State University, Jackson, MS 39217 (United States)

2015-03-02

TiN/SiN{sub x} heterostructures with one monolayer of the interfacial SiN{sub x} have been investigated in the framework of first-principles molecular dynamics calculations in the temperature range of 0 to 1400 K with subsequent static relaxation. The atomic configurations, thermal stability and stress–strain relations have been calculated. Among the heterostructures studied, only the TiN(111)/SiN/TiN(111) and TiN(111)/Si{sub 2}N{sub 3}/TiN(111) ones are thermally stable. Upon tensile load, decohesion occurs between the Ti−N bonds adjacent to the SiN{sub x} interfacial layer for TiN(001)/SiN/TiN(001) and TiN(111)/Si{sub 2}N{sub 3}/TiN(111) heterostructures, and inside the TiN slab for TiN(001)/Si{sub 3}N{sub 4}/TiN(001) and TiN(110)/SiN/TiN(110) ones. Upon shear, failure occurs in TiN near the interfaces in all the heterostructures, except for the TiN(001)/Si{sub 3}N{sub 4}/TiN(001) one, for which the plastic flow occurs inside the TiN slab. Based on these results we estimate the maximum achievable hardness of nc-TiN/Si{sub 3}N{sub 4} nanocomposites free of impurities to be about 170 GPa. - Highlights: • Interface stability in TiN/SiN{sub x} heterostructures at T ≤ 1400 K is studied by quantum molecular dynamics. • Ideal decohesion and shear strengths of the heterostructures have been calculated. • Achievable hardness of nc-TiN/Si{sub 3}N{sub 4}-like nanocomposites of about 170 GPa is calculated. • Experimentally achieved lower hardness is limited by flaws, such as oxygen impurities.
Study of SiN{sub x}:H{sub y} passivant layers for AlGaN/GaN high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Redondo-Cubero, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia and Dpto. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, 28040 Madrid (Spain); Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Gago, R. [Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Romero, M.F.; Gonzalez-Posada, F.; Brana, A.F.; Munoz, E. [Instituto de Sistemas Optoelectronicos y Microtecnologia and Dpto. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, 28040 Madrid (Spain); Jimenez, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia and Dpto. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, 28040 Madrid (Spain); Dpto. Electronica, Escuela Politecnica, Universidad de Alcala, 28805 Alcala de Henares (Spain)

2008-07-01

In this work, hydrogenated silicon nitride (SiN{sub x}:H{sub y}) grown by chemical vapour deposition as passivant layers for high electron mobility transistors (HEMT) have been studied. The film composition and bonding structure were determined by ion beam analysis and X-ray absorption spectroscopy techniques, respectively. The effects of gas precursors (SiH{sub 4}/N{sub 2} and SiH{sub 4}/NH{sub 3}) and film/substrate interface on the film growth have been addressed. The growth on different substrates (Si, GaN, AlGaN), and the effects of plasma pre-treatments have been studied before the growth and the film growth evolution. Results yield no significant differences in all the analysed samples. This points out the relevant role of SiHn radicals as growth precursor species and that intrinsic characteristics of the SiNx:Hy layers are not affected by the film/substrate interface. Hence, improved performance of HEMT with surface plasma pre-treatments before passivation should be related to extrinsic mechanisms (such as creation of defects in AlGaN surface, removal of the surface contamination or ion-induced roughness). (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy

Science.gov (United States)

Agrawal, M.; Ravikiran, L.; Dharmarasu, N.; Radhakrishnan, K.; Karthikeyan, G. S.; Zheng, Y.

2017-01-01

The stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy (PA-MBE) has been studied. AlN nucleation layer and GaN layer were grown as a function of III/V ratio. GaN/AlN structure is found to form buried cracks when AlN is grown in the intermediate growth regime(III/V˜1)and GaN is grown under N-rich growth regime (III/VHEMT) heterostructure was demonstrated on 2-inch SiC that showed good two dimensional electron gas (2DEG) properties with a sheet resistance of 480 Ω/sq, mobility of 1280 cm2/V.s and sheet carrier density of 1×1013 cm-2.
TM grating coupler on low-loss LPCVD based Si3N4 waveguide platform

Science.gov (United States)

Dabos, G.; Manolis, A.; Giesecke, A. L.; Porschatis, C.; Chmielak, B.; Wahlbrink, T.; Pleros, N.; Tsiokos, D.

2017-12-01

We demonstrate, for the first time to our knowledge, a fully etched TM grating coupler for low-loss Low-Pressure-Chemical-Vapor-Deposition (LPCVD) based silicon nitride platform with a coupling loss of 6.5 dB at 1541 nm and a 1 dB bandwidth of 55 nm, addressing applications where TM polarization is a pre-requisite. The proposed GC and the 360 nm × 800 nm strip based Si3N4 waveguides have been fabricated by optical projection lithography using an i-line stepper tool enabling low-cost and mass manufacturing of photonic-integrated-circuits.
Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers

Science.gov (United States)

Prieto, Pilar; Marco, José F.; Prieto, José E.; Ruiz-Gomez, Sandra; Perez, Lucas; del Real, Rafael P.; Vázquez, Manuel; de la Figuera, Juan

2018-04-01

Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe2, or ceramic, CoFe2O4, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe2O4 [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe2O4 and TiN, which is larger for CoFe2O4 thin films grown on the reactive sputtering process with ceramic targets.
Discovery of novel solid solution Ca3Si3-x O3+x N4-2x : Eu2+ phosphors: structural evolution and photoluminescence tuning.

Science.gov (United States)

Wang, Baochen; Liu, Yan-Gai; Huang, Zhaohui; Fang, Minghao; Wu, Xiaowen

2017-12-22

Discovery of novel phosphors is one of the main issues for improving the color rendering index (CRI) and correlated color temperature (CCT) of white light-emitting diodes (w-LEDs). This study mainly presents a systematic research on the synthesis, crystal structure variation and photoluminescence tuning of novel (oxy)nitride solid solution Ca 3 Si 3-x O 3+x N 4-2x : Eu 2+ phosphors. XRD refinements show that lattice distortion occurs when x value diverges the optimum one (x = 1). The lattice distortion causes a widening of emission spectrum and an increase of Stokes shift (ΔSS), which leads to a bigger thermal quenching. With decrease of x value, the emission spectrum shows an obvious red-shift from 505.2 to 540.8 nm, which is attributed to the crystal field splitting. The enhanced crystal field splitting also broadens the excitation spectrum, making it possible to serve as the phosphor for near ultraviolet (n-UV) LEDs. A 3-phosphor-conversion w-LED lamp was fabricated with the as-prepared phosphor, which exhibits high CRI (Ra = 85.29) and suitable CCT (4903.35 K). All these results indicate that the Ca 3 Si 3-x O 3+x N 4-2x : Eu 2+ phosphor can serve as the green phosphor for n-UV w-LEDs, with a tunable spectrum by controlling the crystal structure and morphology.
Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications

International Nuclear Information System (INIS)

Dochev, D; Desmaris, V; Pavolotsky, A; Meledin, D; Belitsky, V; Lai, Z; Henry, A; Janzen, E; Pippel, E; Woltersdorf, J

2011-01-01

We report on electrical properties and microstructure of epitaxial thin NbN films grown on 3C-SiC/Si substrates by means of reactive magnetron sputtering. A complete epitaxial growth at the NbN/3C-SiC interface has been confirmed by means of high resolution transmission electron microscopy (HRTEM) along with x-ray diffractometry (XRD). Resistivity measurements of the films have shown that the superconducting transition onset temperature (T C ) for the best specimen is 11.8 K. Using these epitaxial NbN films, we have fabricated submicron-size hot-electron bolometer (HEB) devices on 3C-SiC/Si substrate and performed their complete DC characterization. The observed critical temperature T C = 11.3 K and critical current density of about 2.5 MA cm -2 at 4.2 K of the submicron-size bridges were uniform across the sample. This suggests that the deposited NbN films possess the necessary homogeneity to sustain reliable hot-electron bolometer device fabrication for THz mixer applications.
Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications

Energy Technology Data Exchange (ETDEWEB)

Dochev, D; Desmaris, V; Pavolotsky, A; Meledin, D; Belitsky, V [Group for Advanced Receiver Development, Department of Earth and Space Sciences, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Lai, Z [Nanofabrication Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Henry, A; Janzen, E [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Pippel, E; Woltersdorf, J, E-mail: dimitar.dochev@chalmers.se [Max-Planck-Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Germany)

2011-03-15

We report on electrical properties and microstructure of epitaxial thin NbN films grown on 3C-SiC/Si substrates by means of reactive magnetron sputtering. A complete epitaxial growth at the NbN/3C-SiC interface has been confirmed by means of high resolution transmission electron microscopy (HRTEM) along with x-ray diffractometry (XRD). Resistivity measurements of the films have shown that the superconducting transition onset temperature (T{sub C}) for the best specimen is 11.8 K. Using these epitaxial NbN films, we have fabricated submicron-size hot-electron bolometer (HEB) devices on 3C-SiC/Si substrate and performed their complete DC characterization. The observed critical temperature T{sub C} = 11.3 K and critical current density of about 2.5 MA cm{sup -2} at 4.2 K of the submicron-size bridges were uniform across the sample. This suggests that the deposited NbN films possess the necessary homogeneity to sustain reliable hot-electron bolometer device fabrication for THz mixer applications.
Multichannel detection of ionic currents through two nanopores fabricated on integrated Si3N4 membranes.

Science.gov (United States)

Yanagi, Itaru; Akahori, Rena; Aoki, Mayu; Harada, Kunio; Takeda, Ken-Ichi

2016-08-16

Integration of solid-state nanopores and multichannel detection of signals from each nanopore are effective measures for realizing high-throughput nanopore sensors. In the present study, we demonstrated fabrication of Si3N4 membrane arrays and the simultaneous measurement of ionic currents through two nanopores formed in two adjacent membranes. Membranes with thicknesses as low as 6.4 nm and small nanopores with diameters of less than 2 nm could be fabricated using the poly-Si sacrificial-layer process and multilevel pulse-voltage injection. Using the fabricated nanopore membranes, we successfully achieved simultaneous detection of clear ionic-current blockades when single-stranded short homopolymers (poly(dA)60) passed through two nanopores. In addition, we investigated the signal crosstalk and leakage current among separated chambers. When two nanopores were isolated on the front surface of the membrane, there was no signal crosstalk or leakage current between the chambers. However, when two nanopores were isolated on the backside of the Si substrate, signal crosstalk and leakage current were observed owing to high-capacitance coupling between the chambers and electrolysis of water on the surface of the Si substrate. The signal crosstalk and leakage current could be suppressed by oxidizing the exposed Si surface in the membrane chip. Finally, the observed ionic-current blockade when poly(dA)60 passed through the nanopore in the oxidized chip was approximately half of that observed in the non-oxidized chip.
Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode

Science.gov (United States)

Taşçıoğlu, İ.; Tüzün Özmen, Ö.; Şağban, H. M.; Yağlıoğlu, E.; Altındal, Ş.

2017-04-01

In this study, poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester: 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (P3HT:PCBM:F4-TCNQ) organic film was deposited on n-type silicon (n-Si) substrate by spin coating method. The electrical and dielectric analysis of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky barrier diode was conducted by means of capacitance-voltage ( C- V) and conductance-voltage ( G/ ω- V) measurements in the frequency range of 10 kHz-2 MHz. The C- V- f plots exhibit fairly large frequency dispersion due to excess capacitance caused by the presence of interface states ( N ss). The values of N ss located in semiconductor bandgap at the organic film/semiconductor interface were calculated by Hill-Coleman method. Experimental results show that dielectric constant ( ɛ') and dielectric loss ( ɛ″) decrease with increasing frequency, whereas loss tangent (tan δ) remains nearly the same. The decrease in ɛ' and ɛ″ was interpreted by the theory of dielectric relaxation due to interfacial polarization. It is also observed that ac electrical conductivity ( σ ac) and electric modulus ( M' and M″) increase with increasing frequency.
A Three-Step Atomic Layer Deposition Process for SiN x Using Si2Cl6, CH3NH2, and N2 Plasma.

Science.gov (United States)

Ovanesyan, Rafaiel A; Hausmann, Dennis M; Agarwal, Sumit

2018-06-06

We report a novel three-step SiN x atomic layer deposition (ALD) process using Si 2 Cl 6 , CH 3 NH 2 , and N 2 plasma. In a two-step process, nonhydrogenated chlorosilanes such as Si 2 Cl 6 with N 2 plasmas lead to poor-quality SiN x films that oxidize rapidly. The intermediate CH 3 NH 2 step was therefore introduced in the ALD cycle to replace the NH 3 plasma step with a N 2 plasma, while using Si 2 Cl 6 as the Si precursor. This three-step process lowers the atomic H content and improves the film conformality on high-aspect-ratio nanostructures as Si-N-Si bonds are formed during a thermal CH 3 NH 2 step in addition to the N 2 plasma step. During ALD, the reactive surface sites were monitored using in situ surface infrared spectroscopy. Our infrared spectra show that, on the post-N 2 plasma-treated SiN x surface, Si 2 Cl 6 reacts primarily with the surface -NH 2 species to form surface -SiCl x ( x = 1, 2, or 3) bonds, which are the reactive sites during the CH 3 NH 2 cycle. In the N 2 plasma step, reactive -NH 2 surface species are created because of the surface H available from the -CH 3 groups. At 400 °C, the SiN x films have a growth per cycle of ∼0.9 Å with ∼12 atomic percent H. The films grown on high-aspect-ratio nanostructures have a conformality of ∼90%.
Magnetic SiO2/Fe3O4 colloidal crystals

International Nuclear Information System (INIS)

Huang, C-K; Hou, C-H; Chen, C-C; Tsai, Y-L; Chang, L-M; Wei, H-S; Hsieh, K-H; Chan, C-H

2008-01-01

We proposed a novel technique to fabricate colloidal crystals by using monodisperse SiO 2 coated magnetic Fe 3 O 4 (SiO 2 /Fe 3 O 4 ) microspheres. The magnetic SiO 2 /Fe 3 O 4 microspheres with a diameter of 700 nm were synthesized in the basic condition with ferric sulfate, ferrous sulfate, tartaric acid and tetraethyl orthosilicate (TEOS) in the reaction system. Monodisperse SiO 2 /Fe 3 O 4 superparamagnetic microspheres have been successfully used to fabricate colloidal crystals under the existing magnetic field
Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Yodo, Tokuo; Yona, Hiroaki; Ando, Hironori; Nosei, Daiki; Harada, Yoshiyuki

2002-01-01

We observed strong band edge luminescence at 8.5-200 K from 200-880 nm thick InN films grown on 10 nm thick InN buffer layers on Si(001) and Si(111) substrates by electron cyclotron resonance-assisted molecular beam epitaxy. The InN film on the Si(001) substrate exhibited strong band edge photoluminescence (PL) emission at 1.814 eV at 8.5 K, tentatively assigned as donor to acceptor pair [DAP (α-InN)] emission from wurtzite-InN (α-InN) crystal grains, while those on Si(111) showed other stronger band edge PL emissions at 1.880, 2.081 and 2.156 eV, tentatively assigned as donor bound exciton [D 0 X(α-InN)] from α-InN grains, DAP (β-InN) and D 0 X (β-InN) emissions from zinc blende-InN (β-InN) grains, respectively
Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

Energy Technology Data Exchange (ETDEWEB)

Hamad, H.; Raynaud, C.; Bevilacqua, P.; Tournier, D.; Planson, D. [Ampère Laboratory - UMR 5005, 21, Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Vergne, B. [Franco-Allemand Institute of Saint-Louis ISL, 5, Rue du Général Cassagnou, 68300 Saint-Louis (France)

2014-02-24

Using a pulsed green laser with a wavelength of 532 nm, a duration pulse of ∼1 ns, and a mean power varying between 1 and 100 mW, induced photocurrents have been measured in 4H-SiC bipolar diodes. Considering the photon energy (2.33 eV) and the bandgap of 4H-SiC (3.2 eV), the generation of electron-hole pair by the conventional single photon absorption process should be negligible. The intensity of the measured photocurrents depends quadratically on the power beam intensity. This clearly shows that they are generated using two-photon absorption process. As in conventional OBIC (Optical Beam Induced Current), the measurements give an image of the electric field distribution in the structure under test, and the minority carrier lifetime can be extracted from the decrease of the photocurrent at the edge of the structure. The extracted minority carrier lifetime of 210 ns is consistent with results obtained in case of single photon absorption.
Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

International Nuclear Information System (INIS)

Hamad, H.; Raynaud, C.; Bevilacqua, P.; Tournier, D.; Planson, D.; Vergne, B.

2014-01-01

Using a pulsed green laser with a wavelength of 532 nm, a duration pulse of ∼1 ns, and a mean power varying between 1 and 100 mW, induced photocurrents have been measured in 4H-SiC bipolar diodes. Considering the photon energy (2.33 eV) and the bandgap of 4H-SiC (3.2 eV), the generation of electron-hole pair by the conventional single photon absorption process should be negligible. The intensity of the measured photocurrents depends quadratically on the power beam intensity. This clearly shows that they are generated using two-photon absorption process. As in conventional OBIC (Optical Beam Induced Current), the measurements give an image of the electric field distribution in the structure under test, and the minority carrier lifetime can be extracted from the decrease of the photocurrent at the edge of the structure. The extracted minority carrier lifetime of 210 ns is consistent with results obtained in case of single photon absorption
Fabrication and photoelectrochemical properties of silicon nanowires/g-C{sub 3}N{sub 4} core/shell arrays

Energy Technology Data Exchange (ETDEWEB)

Chen, Zhen [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Institute of Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Ma, Ge [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Chen, Zhihong, E-mail: chenzhihong1227@sina.com [Shenyang Institute of Automation, Guangzhou, Chinese Academy of Sciences, Guangzhou 511458 (China); Zhang, Yongguang [Research Institute for Energy Equipment Materials, Tianjin Key Laboratory of Materials Laminating Fabrication and Interface Control Technology, Hebei University of Technology, Tianjin 300130 (China); Zhang, Zhe [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Gao, Jinwei [Institute of Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Meng, Qingguo; Yuan, Mingzhe [Shenyang Institute of Automation, Guangzhou, Chinese Academy of Sciences, Guangzhou 511458 (China); Wang, Xin, E-mail: wangxin@scnu.edu.cn [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Liu, Jun-ming [Institute of Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China); Zhou, Guofu [Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province (China)

2017-02-28

Highlights: • A novel Silicon Nanowires/g-C{sub 3}N{sub 4} core/shell arrays photoanode prepared by a mild and inexpensive metal-catalyzed electroless etching (MCEE) process followed by liquid atomic layer deposition (LALD), wiich is a facile and low-cost method. • In comparison with FTO/g-C{sub 3}N{sub 4} and Si NWs samples, the Si NWs/g-C{sub 3}N{sub 4} samples showed significantly enhanced photocurrent which could be attributed to the SiNWs-based core/shell structure. • A systematical PEC mechanism of the Si NWs/g-C{sub 3}N{sub 4} was proposed is this manuscript. - Abstract: A photoelectrochemical (PEC) cell made of metal-free carbon nitride (g-C{sub 3}N{sub 4}) @siliconnanowire(Si NW) arrays (denoted as Si NWs/g-C{sub 3}N{sub 4}) is presented in this work. The as-prepared photoelectrodes with different mass contents of g-C{sub 3}N{sub 4} have been synthesized via a metal-catalyzed electroless etching (MCEE), liquid atomic layer deposition (LALD) and annealing methods. The amount of g-C{sub 3}N{sub 4} on the Si NW arrays can be controlled by tuning the concentration of the cyanamide solution used in the LALD procedure. The dense and vertically aligned Si NWs/g-C{sub 3}N{sub 4} core/shell nanostructures were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). In comparison with FTO/g-C{sub 3}N{sub 4} and Si NW samples, the Si NWs/g-C{sub 3}N{sub 4} samples showed significantly enhanced photocurrents over the entire potential sweep range. Electrochemical impedance spectroscopy (EIS) was conducted to investigate the properties of the charge transfer process, and the results indicated that the enhanced PEC performance may be due to the increased photo-generated interfacial charge transfer between the Si NWs and g-C{sub 3}N{sub 4}. The photocurrent density reached 45 μA/cm{sup 2} under 100 mW/cm{sup 2} (AM 1.5 G) illumination at 0 V (vs. Pt) in neutral Na{sub 2}SO{sub 4} solution (pH ∼ 7
Heteroepitaxy of zinc-blende SiC nano-dots on Si substrate by organometallic ion beam

International Nuclear Information System (INIS)

Matsumoto, T.; Kiuchi, M.; Sugimoto, S.; Goto, S.

2006-01-01

The self-assembled SiC nano-dots were fabricated on Si(111) substrate at low-temperatures using the organometallic ion beam deposition technique. The single precursor of methylsilicenium ions (SiCH 3 + ) with the energy of 100 eV was deposited on Si(111) substrate at 500, 550 and 600 deg. C. The characteristics of the self-assembled SiC nano-dots were analyzed by reflection high-energy electron diffraction (RHEED), Raman spectroscopy and atomic force microscope (AFM). The RHEED patterns showed that the crystal structure of the SiC nano-dots formed on Si(111) substrate was zinc-blende SiC (3C-SiC) and it was heteroepitaxy. The self-assembled SiC nano-dots were like a dome in shape, and their sizes were the length of 200-300 nm and the height of 10-15 nm. Despite the low-temperature of 500 deg. C as SiC crystallization the heteroepitaxial SiC nano-dots were fabricated on Si(111) substrate using the organometallic ion beam
Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

Energy Technology Data Exchange (ETDEWEB)

Llobet, Jordi; Pérez-Murano, Francesc, E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Institut de Microelectrònica de Barcelona (IMB-CNM CSIC), Campus UAB, E-08193 Bellaterra, Catalonia (Spain); Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K., E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ (United Kingdom); Arbiol, Jordi [Institució Catalana de Recerca i Estudis Avançats (ICREA) and Institut Català de Nanociència i Nanotecnologia (ICN2), Campus UAB, 08193 Bellaterra, Catalonia (Spain); CELLS-ALBA Synchrotron Light Facility, 08290 Cerdanyola, Catalonia (Spain)

2015-11-30

Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.

Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

International Nuclear Information System (INIS)

Llobet, Jordi; Pérez-Murano, Francesc; Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K.; Arbiol, Jordi

2015-01-01

Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations
Effects of UV light intensity on electrochemical wet etching of SiC for the fabrication of suspended graphene

Science.gov (United States)

O, Ryong-Sok; Takamura, Makoto; Furukawa, Kazuaki; Nagase, Masao; Hibino, Hiroki

2015-03-01

We report on the effects of UV light intensity on the photo assisted electrochemical wet etching of SiC(0001) underneath an epitaxially grown graphene for the fabrication of suspended structures. The maximum etching rate of SiC(0001) was 2.5 µm/h under UV light irradiation in 1 wt % KOH at a constant current of 0.5 mA/cm2. The successful formation of suspended structures depended on the etching rate of SiC. In the Raman spectra of the suspended structures, we did not observe a significant increase in the intensity of the D peak, which originates from defects in graphene sheets. This is most likely explained by the high quality of the single-crystalline graphene epitaxially grown on SiC.
Strong white and blue photoluminescence from silicon nanocrystals in SiNx grown by remote PECVD using SiCl4/NH3

International Nuclear Information System (INIS)

Benami, A; Santana, G; Ortiz, A; Ponce, A; Romeu, D; Aguilar-Hernandez, J; Contreras-Puente, G; Alonso, J C

2007-01-01

Strong white and blue photoluminescence (PL) from as-grown silicon nanocrystals (nc-Si) in SiN x films prepared by remote plasma enhanced chemical vapour deposition using SiCl 4 /NH 3 mixtures is reported. The colour and intensity of the PL could be controlled by adjusting the NH 3 flow rate. Samples with white emission were annealed at 1000 deg. C, obtaining a strong improvement of the PL intensity with a blue colour. The PL can be attributed to quantum confinement effect in nc-Si embedded in SiN x matrix, which is improved when a better passivation of nc-Si surface with chlorine and nitrogen atoms is obtained. The size, density and structure of the nc-Si in the as-grown and annealed films were confirmed and measured by high-resolution transmission electron microscopy
Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates

Energy Technology Data Exchange (ETDEWEB)

Kryzhanovskaya, N. V., E-mail: NataliaKryzh@gmail.com; Polubavkina, Yu. S. [Russian Academy of Sciences, St. Petersburg National Research Academic University–Nanotechnology Research and Education Center (Russian Federation); Nevedomskiy, V. N. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Nikitina, E. V.; Lazarenko, A. A. [Russian Academy of Sciences, St. Petersburg National Research Academic University–Nanotechnology Research and Education Center (Russian Federation); Egorov, A. Yu. [St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (Russian Federation); Maximov, M. V.; Moiseev, E. I.; Zhukov, A. E. [Russian Academy of Sciences, St. Petersburg National Research Academic University–Nanotechnology Research and Education Center (Russian Federation)

2017-02-15

The structural and optical properties of GaP and GaPN layers synthesized by molecular-beam epitaxy on Si(100) substrates misoriented by 4° are studied. The possibility of producing GaP buffer layers that exhibit a high degree of heterointerface planarity and an outcropping dislocation density of no higher than ~2 × 10{sup 8} cm{sup –2} is shown. Emission from the Si/GaP/GaPN structure in the spectral range of 630–640 nm at room temperature is observed. Annealing during growth of the Si/GaP/GaPN structure makes it possible to enhance the room-temperature photoluminescence intensity by a factor of 2.6, with no shift of the maximum of the emission line.
Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates

International Nuclear Information System (INIS)

Kryzhanovskaya, N. V.; Polubavkina, Yu. S.; Nevedomskiy, V. N.; Nikitina, E. V.; Lazarenko, A. A.; Egorov, A. Yu.; Maximov, M. V.; Moiseev, E. I.; Zhukov, A. E.

2017-01-01

The structural and optical properties of GaP and GaPN layers synthesized by molecular-beam epitaxy on Si(100) substrates misoriented by 4° are studied. The possibility of producing GaP buffer layers that exhibit a high degree of heterointerface planarity and an outcropping dislocation density of no higher than ~2 × 10"8 cm"–"2 is shown. Emission from the Si/GaP/GaPN structure in the spectral range of 630–640 nm at room temperature is observed. Annealing during growth of the Si/GaP/GaPN structure makes it possible to enhance the room-temperature photoluminescence intensity by a factor of 2.6, with no shift of the maximum of the emission line.
Effect of surface reactions on steel, Al{sub 2}O{sub 3} and Si{sub 3}N{sub 4} counterparts on their tribological performance with polytetrafluoroethylene filled composites

Energy Technology Data Exchange (ETDEWEB)

Shen, J.T.; Top, M. [Materials Innovation Institute M2i, Department of Applied Physics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen (Netherlands); Ivashenko, O.; Rudolf, P. [Department of Surfaces and Thin Films, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen (Netherlands); Pei, Y.T., E-mail: y.pei@rug.nl [Materials Innovation Institute M2i, Department of Applied Physics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen (Netherlands); Department of Advanced Production Engineering, Engineering and Technology Institute Groningen, University of Groningen, Nijenborgh 4, 9747 AG Groningen (Netherlands); De Hosson, J.Th.M., E-mail: j.t.m.de.hosson@rug.nl [Materials Innovation Institute M2i, Department of Applied Physics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen (Netherlands)

2015-03-15

Highlights: • The influence of surface reactions with PTFE on the tribo-performance of different counterparts is revealed. • Experiments confirm that friction can be greatly reduced by two F-terminated surfaces sliding over each other. • Al−F and Fe−F chemical bonding form on the surface of alumina and steel counterpart balls during sliding against PTFE-containing composite. • No Si−F bonding formed on Si{sub 3}N{sub 4} ball under the same condition, leading to higher friction and wear. - Abstract: The influence of surface reactions on the tribo-performance of steel, Al{sub 2}O{sub 3} and Si{sub 3}N{sub 4} balls sliding against polytetrafluoroethylene/SiO{sub 2}/epoxy composites was investigated. Al{sub 2}O{sub 3} ball were found to exhibit the best tribo-performance, namely a low coefficient of friction and the lowest wear rates of both the composites and the counterpart ball, when sliding against the PTFE filled composites. The difference in the tribo-performance of the Al{sub 2}O{sub 3} ball and the Si{sub 3}N{sub 4} ball can neither be attributed to the different morphology of the worn composite surfaces nor to the amount of PTFE transferred onto the wear surfaces. Instead we found that the friction is greatly reduced in the case of the Al{sub 2}O{sub 3} ball because two fluoro-terminated surfaces are sliding over each other; in fact, the formation of Al−F bonding was confirmed by X-ray photoelectron spectroscopy.
Suspended mid-infrared fiber-to-chip grating couplers for SiGe waveguides

Science.gov (United States)

Favreau, Julien; Durantin, Cédric; Fédéli, Jean-Marc; Boutami, Salim; Duan, Guang-Hua

2016-03-01

Silicon photonics has taken great importance owing to the applications in optical communications, ranging from short reach to long haul. Originally dedicated to telecom wavelengths, silicon photonics is heading toward circuits handling with a broader spectrum, especially in the short and mid-infrared (MIR) range. This trend is due to potential applications in chemical sensing, spectroscopy and defense in the 2-10 μm range. We previously reported the development of a MIR photonic platform based on buried SiGe/Si waveguide with propagation losses between 1 and 2 dB/cm. However the low index contrast of the platform makes the design of efficient grating couplers very challenging. In order to achieve a high fiber-to-chip efficiency, we propose a novel grating coupler structure, in which the grating is locally suspended in air. The grating has been designed with a FDTD software. To achieve high efficiency, suspended structure thicknesses have been jointly optimized with the grating parameters, namely the fill factor, the period and the grating etch depth. Using the Efficient Global Optimization (EGO) method we obtained a configuration where the fiber-to-waveguide efficiency is above 57 %. Moreover the optical transition between the suspended and the buried SiGe waveguide has been carefully designed by using an Eigenmode Expansion software. Transition efficiency as high as 86 % is achieved.
Thermal conductivity of M-Si-N (M = Mg, Ca, Sr, Ba) compounds with varying M/Si ratio

NARCIS (Netherlands)

Hintzen, H.T.J.M.; Bruls, R.J.; Delsing, A.C.A.; Itatani, K.; Tanaka, S.; With, de G.; Metselaar, R.

2002-01-01

The thermal cond. of M-Si-N (M = Mg, Ca, Sr, Ba) compds. was examd. The emphasis is on MgSiN2 (a material which can be derived from AlN by replacing systematically 2Al3+ by Mg2+/Si4+), and Si3N4 (the well known b-modification as well as the recently discovered cubic modification with the spinel
Protein surface labeling reactivity of N-hydroxysuccinimide esters conjugated to Fe{sub 3}O{sub 4}@SiO{sub 2} magnetic nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Pirani, Parisa; Patil, Ujwal S.; Apsunde, Tushar Dattu; Trudell, Mark L.; Cai, Yang, E-mail: ycai@chnola-research.org; Tarr, Matthew A., E-mail: mtarr@uno.edu [University of New Orleans, Department of Chemistry (United States)

2015-09-15

The N-hydroxysuccinimide (NHS) ester moiety is one of the most widely used amine reactive groups for covalent conjugation of proteins/peptides to other functional targets. In this study, a cleave-analyze approach was developed to quantify NHS ester groups conjugated to silica-coated iron oxide magnetic nanoparticles (Fe{sub 3}O{sub 4}@SiO{sub 2} MNPs). The fluorophore dansylcadaverine was attached to Fe{sub 3}O{sub 4}@SiO{sub 2} magnetic nanoparticles (MNPs) via reaction with NHS ester groups, and then released from the MNPs by cleavage of the disulfide bond in the linker between the fluorophore and the MNPs moiety. The fluorophore released from Fe{sub 3}O{sub 4}@SiO{sub 2} MNPs was fluorometrically measured, and the amount of fluorophore should be equivalent to the quantity of the NHS ester groups on the surface of Fe{sub 3}O{sub 4}@SiO{sub 2} MNPs that participated in the fluorophore conjugation reaction. Another sensitive and semiquantitative fluorescence microscopic test was also developed to confirm the presence of NHS ester groups on the surface of Fe{sub 3}O{sub 4}@SiO{sub 2} MNPs. Surface-conjugated NHS ester group measurements were primarily performed on Fe{sub 3}O{sub 4}@SiO{sub 2} MNPs of 100–150 nm in diameter and also on 20-nm nanoparticles of the same type but prepared by a different method. The efficiency of labeling native proteins by NHS ester-coated Fe{sub 3}O{sub 4}@SiO{sub 2} MNPs was explored in terms of maximizing the number of MNPs conjugated per BSA molecule or maximizing the number of BSA molecules conjugated per each nanoparticle. Maintaining the amount of fresh NHS ester moieties in the labeling reaction system was essential especially when maximizing the number of MNPs conjugated per protein molecule. The methodology demonstrated in this study can serve as a guide in labeling the exposed portions of proteins by bulky multivalent labeling reagents.
SiC substrate defects and III-N heteroepitaxy

Energy Technology Data Exchange (ETDEWEB)

Poust, B D [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Koga, T S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Sandhu, R [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Heying, B [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Hsing, R [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Wojtowicz, M [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Khan, A [Department of Electrical Engineering, University of South Carolina, Columbia, SC (United States); Goorsky, M S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States)

2003-05-21

This study addressed how defects in SiC substrates influence the crystallographic properties of AlGaN/GaN layers deposited by metallorganic vapour phase epitaxy and by molecular beam epitaxy. We employed double crystal reflection x-ray topography using symmetric (0008) and (00012) reflections with CuK{alpha} radiation ({lambda} = 1.54 A) to image dislocations, micropipes, and low angle boundaries in SiC substrates. Lattice strain near the core of a micropipe defect was estimated to be of the order of 10{sup -7}. The substrates investigated exhibited radial patterns of strain and, primarily, of tilt of the order of tens of arcsec. After deposition of the AlGaN and GaN layers, DCXRT images were generated from the substrate (0008) or (00012) and GaN epitaxial layer (0004) reflections. Full-width at half-maximum values ranging from {approx}100 to 300 arcsec were typical of the GaN reflections, while those of the 4H-SiC reflections were {approx}20-70 arcsec. Micropipes, tilt boundaries, and inclusions in the SiC were shown to produce structural defects in the GaN layers. A clear correlation between SiC substrate defects and GaN defects has been established.
SiC substrate defects and III-N heteroepitaxy

International Nuclear Information System (INIS)

Poust, B D; Koga, T S; Sandhu, R; Heying, B; Hsing, R; Wojtowicz, M; Khan, A; Goorsky, M S

2003-01-01

This study addressed how defects in SiC substrates influence the crystallographic properties of AlGaN/GaN layers deposited by metallorganic vapour phase epitaxy and by molecular beam epitaxy. We employed double crystal reflection x-ray topography using symmetric (0008) and (00012) reflections with CuKα radiation (λ = 1.54 A) to image dislocations, micropipes, and low angle boundaries in SiC substrates. Lattice strain near the core of a micropipe defect was estimated to be of the order of 10 -7 . The substrates investigated exhibited radial patterns of strain and, primarily, of tilt of the order of tens of arcsec. After deposition of the AlGaN and GaN layers, DCXRT images were generated from the substrate (0008) or (00012) and GaN epitaxial layer (0004) reflections. Full-width at half-maximum values ranging from ∼100 to 300 arcsec were typical of the GaN reflections, while those of the 4H-SiC reflections were ∼20-70 arcsec. Micropipes, tilt boundaries, and inclusions in the SiC were shown to produce structural defects in the GaN layers. A clear correlation between SiC substrate defects and GaN defects has been established
Uptake properties of Ni2+ by nCaO.Al2O3.2SiO2 (n=1-4) prepared from solid-state reaction of kaolinite and calcite.

Science.gov (United States)

Jha, Vinay Kumar; Kameshima, Yoshikazu; Nakajima, Akira; Okada, Kiyoshi; MacKenzie, Kenneth J D

2005-08-31

A series of nCaO.Al2O3.2SiO2 samples (n=1-4) were prepared by solid-state reaction of mechanochemically treated mixtures of kaolinite and calcite fired at 600-1000 degrees C for 24 h. All the samples were X-ray amorphous after firing at 600-800 degrees C but had crystallized by 900 degrees C. The main crystalline phases were anorthite (n=1), gehlenite (n=2 and 3) and larnite (n=4). The uptake of Ni2+ by nCaO.Al2O3.2SiO2 samples fired at 800 and 900 degrees C was investigated at room temperature using solutions with initial Ni2+ concentrations of 0.1-50 mmol/l. Amorphous samples (fired at 800 degrees C) showed a higher Ni2+ uptake capacity than crystalline samples (fired at 900 degrees C). Ni2+ uptake was found to increase with increasing of CaO content. Amorphous 4CaO.Al2O3.2SiO2 showed the highest Ni2+ uptake capacity (about 9 mmol/g). The Ni2+ uptake abilities of the present samples are higher than those of other materials reported in the literature. Since the sorbed Ni2+/released Ca2+ ratios of these samples are close to unity, ion replacement of Ni2+ for Ca2+ is thought to be the principal mechanism of Ni2+ uptake by the present samples.
Relaxation of a strained 3C-SiC(1 1 1) thin film on silicon by He+ and O+ ion beam defect engineering

International Nuclear Information System (INIS)

Häberlen, M.; Murphy, B.; Stritzker, B.; Lindner, J.K.N.

2012-01-01

In this paper we report on the successful reduction of tensile strain in a thin strained ion-beam synthesized 3C-SiC(1 1 1) layer on silicon. The creation of a near-interface defect structure consisting of nanometric voids and stacking fault type defects by He ion implantation and subsequent annealing yields significant relaxation in the top SiC film. The microstructure of the defect layer is studied by transmission electron microscopy, and the strain state of the 3C-SiC layer was studied by high-resolution X-ray diffraction in a parallel beam configuration. Typical process conditions for the growth of GaN films on the SiC layer were emulated by high temperature treatments in a rapid thermal annealer or a quartz tube furnace. It is found that prolonged annealing at high temperatures leads to ripening of the voids and to a weaker reduction of the tensile strain. It is shown that this problem can be overcome by the co-implantation of oxygen ions to form highly thermally stable void/extended defect structures.
Si etching with reactive neutral beams of very low energy

Energy Technology Data Exchange (ETDEWEB)

Hara, Yasuhiro [Organization for Research and Development of Innovative Science and Technology, Kansai University, 3-3-35 Yamate-chou, Suita, Osaka 565-0871 (Japan); Hamagaki, Manabu; Mise, Takaya [RIKEN, 2-1, Hirosawa, Wako, Saitama 351-0198 (Japan); Iwata, Naotaka; Hara, Tamio [Toyota Technological Institute, 2-12-1 Hisakata, Tenpaku-ku, Nagoya 468-8511 (Japan)

2014-12-14

A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF{sub 4} and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si–Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching.
Verification of Fowler–Nordheim electron tunneling mechanism in Ni/SiO{sub 2}/n-4H SiC and n{sup +} poly-Si/SiO{sub 2}/n-4H SiC MOS devices by different models

Energy Technology Data Exchange (ETDEWEB)

Kodigala, Subba Ramaiah, E-mail: kodigala@gmail.com [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Department of Physics and Astronomy, Department of Electrical and Computer Engineering, California State University, Northridge, CA 91330 (United States)

2016-11-01

This article emphasizes verification of Fowler–Nordheim electron tunneling mechanism in the Ni/SiO{sub 2}/n-4H SiC MOS devices by developing three different kinds of models. The standard semiconductor equations are categorically solved to obtain the change in Fermi energy level of semiconductor with effect of temperature and field that extend support to determine sustainable and accurate tunneling current through the oxide layer. The forward and reverse bias currents with variation of electric field are simulated with help of different models developed by us for MOS devices by applying adequate conditions. The latter is quite different from former in terms of tunneling mechanism in the MOS devices. The variation of barrier height with effect of quantum mechanical, temperature, and fields is considered as effective barrier height for the generation of current–field (J–F) curves under forward and reverse biases but quantum mechanical effect is void in the latter. In addition, the J–F curves are also simulated with variation of carrier concentration in the n-type 4H SiC semiconductor of MOS devices and the relation between them is established.
First-principles quantum molecular calculations of structural and mechanical properties of TiN/SiNx heterostructures, and the achievable hardness of the nc-TiN/SiNx nanocomposites

International Nuclear Information System (INIS)

Ivashchenko, V.I.; Veprek, S.; Argon, A.S.; Turchi, P.E.A.; Gorb, L.; Hill, F.; Leszczynski, J.

2015-01-01

TiN/SiN x heterostructures with one monolayer of the interfacial SiN x have been investigated in the framework of first-principles molecular dynamics calculations in the temperature range of 0 to 1400 K with subsequent static relaxation. The atomic configurations, thermal stability and stress–strain relations have been calculated. Among the heterostructures studied, only the TiN(111)/SiN/TiN(111) and TiN(111)/Si 2 N 3 /TiN(111) ones are thermally stable. Upon tensile load, decohesion occurs between the Ti−N bonds adjacent to the SiN x interfacial layer for TiN(001)/SiN/TiN(001) and TiN(111)/Si 2 N 3 /TiN(111) heterostructures, and inside the TiN slab for TiN(001)/Si 3 N 4 /TiN(001) and TiN(110)/SiN/TiN(110) ones. Upon shear, failure occurs in TiN near the interfaces in all the heterostructures, except for the TiN(001)/Si 3 N 4 /TiN(001) one, for which the plastic flow occurs inside the TiN slab. Based on these results we estimate the maximum achievable hardness of nc-TiN/Si 3 N 4 nanocomposites free of impurities to be about 170 GPa. - Highlights: • Interface stability in TiN/SiN x heterostructures at T ≤ 1400 K is studied by quantum molecular dynamics. • Ideal decohesion and shear strengths of the heterostructures have been calculated. • Achievable hardness of nc-TiN/Si 3 N 4 -like nanocomposites of about 170 GPa is calculated. • Experimentally achieved lower hardness is limited by flaws, such as oxygen impurities
Lu{sub 3}(Al,Si){sub 5}(O,N){sub 12}:Ce{sup 3+} phosphors with broad emission band and high thermal stability for white LEDs

Energy Technology Data Exchange (ETDEWEB)

Liu, Jiaqing; Wang, Xiaojun; Xuan, Tongtong; Wang, Chunbo; Li, Huili, E-mail: hlli@phy.ecnu.edu.cn; Sun, Zhuo

2015-02-15

A yellow-orange emitting Lu{sub 3}Al{sub 5−x}Si{sub x}O{sub 12−x}N{sub x}:Ce{sup 3+} phosphor with excellent color rendering, high luminescent efficiency and high thermal stability was reported in this paper. It was synthesized by a conventional solid-state reaction method. The effect of Si{sup 4+}–N{sup 3−} incorporation on the optical properties of Lu{sub 3}Al{sub 5}O{sub 12}:Ce{sup 3+} phosphor was investigated and compared to YAG:Ce{sup 3+} with the same compositions. Similarly, the addition of α-Si{sub 3}N{sub 4} leads to a distinct redshift and broadening of photoluminescent spectrum, which is assigned to the increased covalency and crystal field strength caused by N{sup 3−}. Nevertheless, an excellent thermal stability and a higher integrated intensity presented by α-Si{sub 3}N{sub 4}-doped LuAG:Ce{sup 3+} are distinctive. Further, the emission intensity can be greatly enhanced by adding NaF flux. Finally, the white LED flat lamp with a CRI as high as 83 and a luminous efficiency of 85 lm/W is successfully realized by using a single LuAG-based oxynitride phosphor combined with a blue LED chip, which is completely feasible for general indoor illuminations to replace the traditional fluorescent or incandescent lamps. - Highlights: • Si{sub 3}N{sub 4}-doped LuAG:Ce{sup 3+} oxynitride phosphors were synthesized by a solid-state reaction. • The effect of Si{sup 4+}–N{sup 3−} incorporation on the optical properties was investigated. • The addition of Si{sub 3}N{sub 4} leads to an obvious redshift of the emission spectra. • Lu{sub 3}Al{sub 5−x}Si{sub x}O{sub 12−x}N{sub x}:Ce{sup 3+} shows an excellent thermal stability and a higher intensity. • A warm white LED with CRI=83 is achieved by a single oxynitride phosphor.
Epitaxial growth of SrTiO3 thin film on Si by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Zhou, X. Y.; Miao, J.; Dai, J. Y.; Chan, H. L. W.; Choy, C. L.; Wang, Y.; Li, Q.

2007-01-01

SrTiO 3 thin films have been deposited on Si (001) wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTiO 3 was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTiO 3 /Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTiO 3 and the interfacial structure. Electrical measurements revealed that the SrTiO 3 film was highly resistive
Linear dose dependence of ion beam mixing of metals on Si

International Nuclear Information System (INIS)

Poker, D.B.; Appleton, B.R.

1985-01-01

These experiments were conducted to determine the dose dependences of ion beam mixing of various metal-silicon couples. V/Si and Cr/Si were included because these couples were previously suspected of exhibiting a linear dose dependence. Pd/Si was chosen because it had been reported as exhibiting only the square root dependence. Samples were cut from wafers of (100) n-type Si. The samples were cleaned in organic solvents, etched in hydrofluoric acid, and rinsed with methanol before mounting in an oil-free vacuum system for thin-film deposition. Films of Au, V, Cr, or Pd were evaporated onto the Si samples with a nominal deposition rate of 10 A/s. The thicknesses were large compared with those usually used to measure ion beam mixing and were used to ensure that conditions of unlimited supply were met. Samples were mixed with Si ions ranging in energy from 300 to 375 keV, chosen to produce ion ranges that significantly exceeded the metal film depth. Si was used as the mixing ion to prevent impurity doping of the Si substrate and to exclude a background signal from the Rutherford backscattering (RBS) spectra. Samples were mixed at room temperature, with the exception of the Au/Si samples, which were mixed at liquid nitrogen temperature. The samples were alternately mixed and analyzed in situ without exposure to atmosphere between mixing doses. The compositional distributions after mixing were measured using RBS of 2.5-MeV 4 He atoms
CVD of SiC and AlN using cyclic organometallic precursors

Science.gov (United States)

Interrante, L. V.; Larkin, D. J.; Amato, C.

1992-01-01

The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application

Energy Technology Data Exchange (ETDEWEB)

Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl; Wośko, Mateusz; Paszkiewicz, Bogdan; Paszkiewicz, Regina [The Faculty of Microsystem Electronics and Photonics, Wrocaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Drzik, Milan [International Laser Center, Ilkovicova 3, 841-04 Bratislava 4 (Slovakia)

2015-07-15

GaN layers without and with an in-situ SiN mask were grown by using metal organic vapor phase epitaxy for three different approaches used in GaN on silicon(111) growth, and the physical and optical properties of the GaN layers were studied. For each approach applied, GaN layers of 1.4 μm total thickness were grown, using silan SiH{sub 4} as Si source in order to grow Si{sub x}N{sub x} masking layer. The optical micrographs, scanning electron microscope images, and atomic force microscope images of the grown samples revealed cracks for samples without SiN mask, and micropits, which were characteristic for the samples grown with SiN mask. In situ reflectance signal traces were studied showing a decrease of layer coalescence time and higher degree of 3D growth mode for samples with SiN masking layer. Stress measurements were conducted by two methods—by recording micro-Raman spectra and ex-situ curvature radius measurement—additionally PLs spectra were obtained revealing blueshift of PL peak positions with increasing stress. The authors have shown that a SiN mask significantly improves physical and optical properties of GaN multilayer systems reducing stress in comparison to samples grown applying the same approaches but without SiN masking layer.
Conduction mechanism in electron beam irradiated Al/n-Si Schottky diode

International Nuclear Information System (INIS)

Vali, Indudhar Panduranga; Shetty, Pramoda Kumara; Mahesha, M.G.; Petwal, V.C.

2016-01-01

In the high energy physics experiments, silicon based diodes are used to fabricate radiation detector to detect the charged particles. The Schottky barrier diodes have been studied extensively to understand the behavior of metal semiconductor interface, since such interfaces have been utilized as typical contacts in silicon devices. Because of surface states, interfacial layer, microscopic clusters of metal-semiconductor phases and other effects, it is difficult to fabricate junctions with barriers near the ideal values predicted from the work functions of the two isolated materials, therefore measured barrier heights are used in the device design. In this work, the Al/n-Si Schottky contacts are employed to study the diode parameters (Schottky barrier height and ideality factor), where the Schottky contacts were fabricated on electron beam irradiated silicon wafers. The interface behavior between electron irradiated Si wafer and post metal deposition is so far not reported. This method could be an alternative way to tailor the Schottky barrier height (SBH) without subjecting semiconductor sample to pre chemical and/or post heat treatments during fabrication
Silicon nitride and silicon etching by CH{sub 3}F/O{sub 2} and CH{sub 3}F/CO{sub 2} plasma beams

Energy Technology Data Exchange (ETDEWEB)

Kaler, Sanbir S.; Lou, Qiaowei; Donnelly, Vincent M., E-mail: vmdonnelly@uh.edu; Economou, Demetre J., E-mail: economou@uh.edu [Department of Chemical and Biomolecular Engineering, Plasma Processing Laboratory, University of Houston, Houston, Texas 77204 (United States)

2016-07-15

Silicon nitride (SiN, where Si:N ≠ 1:1) films low pressure-chemical vapor deposited on Si substrates, Si films on Ge on Si substrates, and p-Si samples were exposed to plasma beams emanating from CH{sub 3}F/O{sub 2} or CH{sub 3}F/CO{sub 2} inductively coupled plasmas. Conditions within the plasma beam source were maintained at power of 300 W (1.9 W/cm{sup 3}), pressure of 10 mTorr, and total gas flow rate of 10 sccm. X-ray photoelectron spectroscopy was used to determine the thicknesses of Si/Ge in addition to hydrofluorocarbon polymer films formed at low %O{sub 2} or %CO{sub 2} addition on p-Si and SiN. Polymer film thickness decreased sharply as a function of increasing %O{sub 2} or %CO{sub 2} addition and dropped to monolayer thickness above the transition point (∼48% O{sub 2} or ∼75% CO{sub 2}) at which the polymer etchants (O and F) number densities in the plasma increased abruptly. The C(1s) spectra for the polymer films deposited on p-Si substrates appeared similar to those on SiN. Spectroscopic ellipsometry was used to measure the thickness of SiN films etched using the CH{sub 3}F/O{sub 2} and CH{sub 3}F/CO{sub 2} plasma beams. SiN etching rates peaked near 50% O{sub 2} addition and 73% CO{sub 2} addition. Faster etching rates were measured in CH{sub 3}F/CO{sub 2} than CH{sub 3}F/O{sub 2} plasmas above 70% O{sub 2} or CO{sub 2} addition. The etching of Si stopped after a loss of ∼3 nm, regardless of beam exposure time and %O{sub 2} or %CO{sub 2} addition, apparently due to plasma assisted oxidation of Si. An additional GeO{sub x}F{sub y} peak was observed at 32.5 eV in the Ge(3d) region, suggesting deep penetration of F into Si, under the conditions investigated.
Thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap semiconductors SiC, GaN, and ZnO

Directory of Open Access Journals (Sweden)

Zheng Huang

2015-09-01

Full Text Available We have investigated the thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap(n-type semiconductors SiC, GaN, and ZnO based on first-principles calculations and Boltzmann transport theory. Our results show that the thermoelectric performance increases from 3C to 6H, 4H, and 2H structures with an increase of hexagonality for SiC. However, for GaN and ZnO, their power factors show a very weak dependence on the polytype. Detailed analysis of the thermoelectric properties with respect to temperature and carrier concentration of 4H-SiC, 2H-GaN, and 2H-ZnO shows that the figure of merit of these three compounds increases with temperature, indicating the promising potential applications of these thermoelectric materials at high temperature. The significant difference of the polytype-dependent thermoelectric properties among SiC, GaN, and ZnO might be related to the competition between covalency and ionicity in these semiconductors. Our calculations may provide a new way to enhance the thermoelectric properties of wide-band-gap semiconductors through atomic structure design, especially hexagonality design for SiC.
Preparation and characterization of hybrid A359/(SiC+Si{sub 3}N{sub 4}) composites synthesized by stir/squeeze casting techniques

Energy Technology Data Exchange (ETDEWEB)

Shalaby, Essam A.M.; Churyumov, Alexander Yu., E-mail: churyumov@misis.ru; Solonin, Alexey N.; Lotfy, A.

2016-09-30

Stir followed by squeeze casting techniques were used to produce A359 composites containing different weight percentage of (SiC+Si{sub 3}N{sub 4}) particles. Microstructures of the composites showed a homogeneous and even distribution of hybrid reinforcements within the matrix. Moreover, particles agglomerations, residual porosity, and other casting problems were not noticed. Interfacial reactions between the particles and the matrix were investigated using X-ray diffraction and energy dispersive X-ray analyses. The presence of particles in squeezed composites did not only increase the peak hardness of the composites, but also accelerated the aging kinetics. As compared with the A359 matrix alloy, a compression test of the hybrid composites exhibited a significant increase in the yield and the ultimate compressive strengths with a relative reduction in the failure strain. Finite element modeling of the composite compression showed that strain concentration near large SiC particles is the main reason for low ductility of the composite. The development of those lightweight hybrid composites with high mechanical properties has a high potential to be used for automotive and aerospace applications.
Analysis of the properties of silicon nitride based ceramic (Si_3N_4) cutting tool using different addictive

International Nuclear Information System (INIS)

Pereira, Joaquim Lopes; Souza, Jose Vitor Candido de; Raymundo, Emerson Augusto; Silva, Oliverio Macedo Moreira

2013-01-01

The constant search for new materials is part of the scientific and technological development of the industries. Ceramic been presenting important developments in terms of scientific and technological development, highlighting the predominance of covalent ceramics, which has important applications where abrasion resistance and hardness are required. Between covalent materials, several research papers in search of property improvements and cost reduction. However the production of ceramics of silicon nitride (Si_3N_4) with a reduced cost is possible only if used methods and different additives. The aim of this work is the development of compositions based on silicon nitride (Si_3N_4) using different additives such as Y_2O_3, CeO_2, Al_2O_3 , and CTR_2O_3 in varying amounts. For the development of ceramics, the mixtures were homogenized, dried, compacted and sintered using the sintering process of 1850°C for 1 hour, with a heating rate of 25°C/min. The characterizations were performed as a function of relative density by Archimedes method, the mass loss measured before and after sintering, phase analysis by X-ray diffraction, microstructure by scanning electron microscopy (SEM), and hardness and fracture toughness indentation method. The results showed relative density 97-98, Vickers hardness 17-19 GPa, fracture toughness from 5.6 to 6.8 MPa.m"1"/"2. The different phases were obtained depending on the types of additives used. The obtained results are promising for tribological applications. (author)
Effect of SiC buffer layer on GaN growth on Si via PA-MBE

Science.gov (United States)

Kukushkin, S. A.; Mizerov, A. M.; Osipov, A. V.; Redkov, A. V.; Telyatnik, R. S.; Timoshnev, S. N.

2017-11-01

The study is devoted to comparison of GaN thin films grown on SiC/Si substrates made by the method of atoms substitution with the films grown directly on Si substrates. The growth was performed in a single process via plasma assisted molecular beam epitaxy. The samples were studied via optical microscopy, Raman spectroscopy, ellipsometry, and a comparison of their characteristics was made. Using chemical etching in KOH, the polarity of GaN films grown on SiC/Si and Si substrates was determined.
Electrical isolation of dislocations in Ge layers on Si(001 substrates through CMOS-compatible suspended structures

Directory of Open Access Journals (Sweden)

Vishal Ajit Shah, Maksym Myronov, Chalermwat Wongwanitwatana, Lewis Bawden, Martin J Prest, James S Richardson-Bullock, Stephen Rhead, Evan H C Parker, Terrance E Whall and David R Leadley

2012-01-01

Full Text Available Suspended crystalline Ge semiconductor structures are created on a Si(001 substrate by a combination of epitaxial growth and simple patterning from the front surface using anisotropic underetching. Geometric definition of the surface Ge layer gives access to a range of crystalline planes that have different etch resistance. The structures are aligned to avoid etch-resistive planes in making the suspended regions and to take advantage of these planes to retain the underlying Si to support the structures. The technique is demonstrated by forming suspended microwires, spiderwebs and van der Pauw cross structures. We finally report on the low-temperature electrical isolation of the undoped Ge layers. This novel isolation method increases the Ge resistivity to 280 Ω cm at 10 K, over two orders of magnitude above that of a bulk Ge on Si(001 layer, by removing material containing the underlying misfit dislocation network that otherwise provides the main source of electrical conduction.
Material development in the SI{sub 3}N{sub 4} system using glass encapsulated Hip`ing. Final report, Phase 2: DOE/ORNL Ceramic Technology Project

Energy Technology Data Exchange (ETDEWEB)

Corbin, N.D.; Sundberg, G.J.; Siebein, K.N.; Willkens, C.A.; Pujari, V.K.; Rossi, G.A.; Hansen, J.S.; Chang, C.L.; Hammarstrom, J.L.

1992-04-01

This report covers a two-year program to develop fully dense Si{sub 3}N{sub 4} matrix SiC whisker composites with enhanced properties over monolithic Si{sub 3}N{sub 4} materials. The primary goal was to develop a composite with a fracture toughness > 10 MPa{radical}m, capable of using high pressure glass encapsulated HIP`ing. Coating methods were developed to apply thin (<150nm) stoichiometric BN layers to SiC whiskers and also to apply a dual coating of SiC over carbon to the whiskers. Fracture toughness of the composites was determined to increase as the quantity of whiskers (or elongated grains) with their axis perpendicular to the crack plane increased. Of the interface compositions evaluated in this effort, carbon was determined to be the most effective for increasing toughness. The highest toughnesses (6.8--7.0 MPa{radical}m) were obtained with uniaxially aligned carbon coated whiskers. There was no evidence of the carbon coating compromising the oxidation resistance of the composites at 1370{degree}C.
Analysis of the properties of silicon nitride based ceramic (Si{sub 3}N{sub 4}) cutting tool using different addictive; Analise das propriedades de ferramenta de corte ceramicas de nitreto de silicio (Si{sub 3}N{sub 4}) usando diferentes aditivos

Energy Technology Data Exchange (ETDEWEB)

Pereira, Joaquim Lopes; Souza, Jose Vitor Candido de; Raymundo, Emerson Augusto [Centro Universitario de Volta Redonda (UNIFOA), Volta Redonda, RJ (Brazil); Silva, Oliverio Macedo Moreira [Centro Tecnico Aeroespacial (CTA), Sao Jose dos Campos, SP (Brazil)

2013-06-15

The constant search for new materials is part of the scientific and technological development of the industries. Ceramic been presenting important developments in terms of scientific and technological development, highlighting the predominance of covalent ceramics, which has important applications where abrasion resistance and hardness are required. Between covalent materials, several research papers in search of property improvements and cost reduction. However the production of ceramics of silicon nitride (Si{sub 3}N{sub 4}) with a reduced cost is possible only if used methods and different additives. The aim of this work is the development of compositions based on silicon nitride (Si{sub 3}N{sub 4}) using different additives such as Y{sub 2}O{sub 3}, CeO{sub 2}, Al{sub 2}O{sub 3} , and CTR{sub 2}O{sub 3} in varying amounts. For the development of ceramics, the mixtures were homogenized, dried, compacted and sintered using the sintering process of 1850°C for 1 hour, with a heating rate of 25°C/min. The characterizations were performed as a function of relative density by Archimedes method, the mass loss measured before and after sintering, phase analysis by X-ray diffraction, microstructure by scanning electron microscopy (SEM), and hardness and fracture toughness indentation method. The results showed relative density 97-98, Vickers hardness 17-19 GPa, fracture toughness from 5.6 to 6.8 MPa.m{sup 1/2}. The different phases were obtained depending on the types of additives used. The obtained results are promising for tribological applications. (author)
Strain distribution in freestanding Si/Si{sub x}N{sub y} membranes studied by transmission electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Gao, Hongye, E-mail: hongye18@mm.kyushu-u.ac.j [Faculty of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Ikeda, Ken-ichi; Hata, Satoshi; Nakashima, Hideharu [Faculty of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Wang, Dong; Nakashima, Hiroshi [Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

2010-09-30

Strain was induced in a bridge-shaped freestanding Si membrane (FSSM) by depositing an amorphous Si{sub x}N{sub y} layer to surround the Si membrane. Convergent beam electron diffraction revealed that compressive strain is distributed uniformly along the horizontal direction in Si{sub x}N{sub y}-deposited FSSM. On the other hand, strain decreases to almost zero at the ends of the FSSM, where the Si{sub x}N{sub y} layer beneath the Si layer is replaced by a SiO{sub 2} buried oxide layer.
Ultra-thin g-C{sub 3}N{sub 4} nanosheets wrapped silicon nanowire array for improved chemical stability and enhanced photoresponse

Energy Technology Data Exchange (ETDEWEB)

Wang, Beibei; Yu, Hongtao; Quan, Xie, E-mail: quanxie@dlut.edu.cn; Chen, Shuo

2014-11-15

Highlights: • g-C{sub 3}N{sub 4}, as an oxygen free and metal free protective material for Si, was proposed. • g-C{sub 3}N{sub 4} nanosheets wrapped Si nanowire array was synthesized. • SiNW/g-C{sub 3}N{sub 4} exhibited enhancement of photoelectrochemical stability and photocurrent. - Abstract: In order to inhibit the oxidation of Si materials in aqueous solution, Si nanowire array was wrapped by ultra-thin g-C{sub 3}N{sub 4} nanosheets via an electrophoresis process. Scanning electron microscopy and transmission electron microscopy images showed that g-C{sub 3}N{sub 4} nanosheets were evenly distributed on the surface of Si nanowire array. X-ray diffraction patterns indicated that Si nanowire array/g-C{sub 3}N{sub 4} nanosheets were composed of Si (4 0 0 crystal plane) and g-C{sub 3}N{sub 4} (0 0 2 and 1 0 0 crystal planes). The cyclic voltammetry curves revealed that the corrosion of Si nanowire array was restrained under the protection of g-C{sub 3}N{sub 4} nanosheets. Furthermore, the photocurrent density of Si nanowire array/g-C{sub 3}N{sub 4} nanosheets increased by nearly 3 times compared to that of bare Si nanowire array due to the effective charge separation caused by the built-in electric field at the interface. This work will facilitate the applications of Si materials in aqueous solution, such as solar energy harvest and photocatalytic pollution control.
Vacancy-related defect distributions in 11B-, 14N-, and 27Al-implanted 4H-SiC: Role of channeling

International Nuclear Information System (INIS)

Janson, M.S.; Slotte, J.; Kuznetsov, A.Yu.; Saarinen, K.; Hallen, A.

2004-01-01

The defect distributions in 11 B-, 14 N-, and 27 Al-implanted epitaxial 4H-SiC are studied using monoenergetic positron beams. At least three types of defects are needed to account for the Doppler broadening annihilation spectra and two of the defects are tentatively identified as V Si , and V Si V C . By comparing the defect profiles extracted from the annihilation spectra to the chemical profiles determined by secondary ion mass spectrometry, and to the primary defect profiles obtained from binary collision approximation simulations, it is concluded that the defects found at depths considerably deeper than the projected range of the implanted ions mainly originate from deeply channeled ions
Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Corrion, A. L.; Poblenz, C.; Wu, F.; Speck, J. S.

2008-01-01

The impact of growth conditions on the surface morphology and structural properties of ammonia molecular beam epitaxy GaN buffers layers on SiC substrates was investigated. The threading dislocation (TD) density was found to decrease with decreasing NH 3 :Ga flux ratio, which corresponded to an increase in surface roughness and reduction in residual compressive lattice mismatch stress. Furthermore, the dislocation density and compressive stress decreased for increasing buffer thickness. TD inclination was proposed to account for these observations. Optimized surface morphologies were realized at high NH 3 :Ga flux ratios and were characterized by monolayer-high steps, spiral hillocks, and pyramidal mounds, with rms roughness of ∼1.0 nm over 2x2 μm 2 atomic force microscopy images. Smooth surface morphologies were realized over a large range of growth temperatures and fluxes, and growth rates of up to 1 μm/h were achieved. TD densities in the buffers as low as 3x10 9 cm -2 were demonstrated. These buffers were highly insulating and were used in recently reported AlGaN/GaN HEMTs with power densities of >11 W/mm at 4 and 10 GHz
Structural studies of n-type nc-Si-QD thin films for nc-Si solar cells

Science.gov (United States)

Das, Debajyoti; Kar, Debjit

2017-12-01

A wide optical gap nanocrystalline silicon (nc-Si) dielectric material is a basic requirement at the n-type window layer of nc-Si solar cells in thin film n-i-p structure on glass substrates. Taking advantage of the high atomic-H density inherent to the planar inductively coupled low-pressure (SiH4 + CH4)-plasma, development of an analogous material in P-doped nc-Si-QD/a-SiC:H network has been tried. Incorporation of C in the Si-network extracted from the CH4 widens the optical band gap; however, at enhanced PH3-dilution of the plasma spontaneous miniaturization of the nc-Si-QDs below the dimension of Bohr radius (∼4.5 nm) further enhances the band gap by virtue of the quantum size effect. At increased flow rate of PH3, dopant induced continuous amorphization of the intrinsic crystalline network is counterbalanced by the further crystallization promoted by the supplementary atomic-H extracted from PH3 (1% in H2) in the plasma, eventually holding a moderately high degree of crystallinity. The n-type wide band gap (∼1.93 eV) window layer with nc-Si-QDs in adequate volume fraction (∼52%) could furthermore be instrumental as an effective seed layer for advancing sequential crystallization in the i-layer of nc-Si solar cells with n-i-p structure in superstrate configuration.
Geometric structure of thin SiO xN y films on Si(100)

Science.gov (United States)

Behrens, K.-M.; Klinkenberg, E.-D.; Finster, J.; Meiwes-Broer, K.-H.

1998-05-01

Thin films of amorphous stoichometric SiO xN y are deposited on radiation-heated Si(100) by rapid thermal low-pressure chemical vapour deposition. We studied the whole range of possible compositions. In order to determine the geometric structure, we used EXAFS and photoelectron spectroscopy. Tetrahedrons constitute the short-range units with a central Si atom connected to N and O. The distribution of the possible tetrahedrons can be described by a mixture of the Random Bonding Model and the Random Mixture Model. For low oxygen contents x/( x+ y)≤0.3, the geometric structure of the film is almost the structure of a-Si 3N 4, with the oxygen preferably on top of Si-N 3 triangles. Higher oxygen contents induce changes in the bond lengths, bond angles and coordination numbers.
Electron radiation damages to dicalcium (Ca{sub 2}SiO{sub 4}) and tricalcium (Ca{sub 3}SiO{sub 5}) orthosilicates

Energy Technology Data Exchange (ETDEWEB)

Noirfontaine, Marie-Noëlle de; Dunstetter, Frédéric [Laboratoire des Solides Irradiés, UMR CNRS 7642, Ecole Polytechnique, Université Paris-Saclay, F-91128 Palaiseau Cedex (France); Courtial, Mireille [Laboratoire des Solides Irradiés, UMR CNRS 7642, Ecole Polytechnique, Université Paris-Saclay, F-91128 Palaiseau Cedex (France); Université d’Artois, 1230 Rue de l’Université, CS 20819, F-62408 Béthune (France); Signes-Frehel, Marcel [Laboratoire des Solides Irradiés, UMR CNRS 7642, Ecole Polytechnique, Université Paris-Saclay, F-91128 Palaiseau Cedex (France); Wang, Guillaume [Laboratoire Matériaux et Phénomènes Quantiques, UMR CNRS 7162, Université Paris Diderot, F-75205 Paris Cedex 13 (France); Gorse - Pomonti, Dominique [Laboratoire des Solides Irradiés, UMR CNRS 7642, Ecole Polytechnique, Université Paris-Saclay, F-91128 Palaiseau Cedex (France)

2016-05-01

Electron radiation damages to dicalcium silicate (Ca{sub 2}SiO{sub 4}) and tricalcium silicate (Ca{sub 3}SiO{sub 5}) are reported for the first time in this paper. With increasing flux, between 2.7 × 10{sup 17} and 2.2 × 10{sup 22} e{sup −} cm{sup −2} s{sup −1}, decomposition into nanodomains of crystalline CaO plus an amorphous silica rich phase is first observed for both silicates, then amorphization at higher flux always for both silicates, and finally hole drilling but only for Ca{sub 3}SiO{sub 5}. These structural modifications are accompanied by a net reduction of Ca content under the electron beam depending on the silicate species. These radiation effects occur for values of flux and dose larger than in previously studied orthosilicates (like olivines), and much larger than in all tectosilicates.
One-Step Preparation of Blue-Emitting (La,Ca)Si3(O,N)5:Ce3+ Phosphors for High-Color Rendering White Light-Emitting Diodes

Science.gov (United States)

Yaguchi, Atsuro; Suehiro, Takayuki; Sato, Tsugio; Hirosaki, Naoto

2011-02-01

Highly phase-pure (La,Ca)Si3(O,N)5:Ce3+ blue-emitting phosphors were successfully synthesized via the one-step solid-state reaction from the system La2O3-CaO-CeO2-Si3N4. The synthesized (La,Ca)Si3(O,N)5:Ce3+ exhibits tunable blue broadband emission with the dominant wavelength of 466-479 nm and the external quantum efficiency up to ˜45% under 380 nm near-UV (NUV) excitation. Spectral simulations of the trichromatic white light-emitting diodes (LEDs) using (La,Ca)Si3(O,N)5:Ce3+ demonstrated markedly higher color rendering index Ra values of 93-95, compared to 76-90 attained by the systems using a conventional BAM:Eu2+ phosphor or InGaN blue LED. The present achievement indicates the promising applicability of (La,Ca)Si3(O,N)5:Ce3+ as a blue luminescent source for NUV-converting high-color rendering white LEDs.
Progress on Background-Limited Membrane-Isolated TES Bolometers for Far-IR/Submillimeter Spectroscopy

Science.gov (United States)

Kenyon, M.; Day, P. K.; Bradford, C. M.; Bock, J. J.; Leduc, H. G.

2006-01-01

To determine the lowest attainable phonon noise equivalent power (NEP) for membrane-isolation bolometers, we fabricated and measured the thermal conductance of suspended Si3N4 beams with different geometries via a noise thermometry technique. We measured beam cross-sectional areas ranging from 0.35 x 0.5 (micro)m(sup 2) to 135 x 1.0 (micro)m(sup 2) and beam lengths ranging from (micro)m to 8300 (micro)m. The measurements directly imply that membrane-isolation bolometers are capable of reaching a phonon noise equivalent power (NEP) of 4 x 10(sup -20)W/Hz(sup 1)/O . This NEP adequate for the Background-Limited Infrared-Submillimeter Spectrograph (BLISS) proposed for the Japanese SPICA observatory, and adequate for NASA's SAFIR observatory, a 10-meter, 4 K telescope to be deployed at L2. Further, we measured the heat capacity of a suspended Si3N4 membrane and show how this result implies that one can make membrane-isolation bolometers with a response time which is fast enough for BLISS.
Energetic prediction on the stability of A2Mg12Si7, A2Mg4Si3, and AMgSi in the A2Si–Mg2Si system (A = Ca, Sr and Ba) and their calculated electronic structures

International Nuclear Information System (INIS)

Imai, Yoji; Mori, Yoshihisa; Nakamura, Shigeyuki; Takarabe, Ken-ichi

2014-01-01

Highlights: • Formation energies of A 2 Mg 4 Si 3 , A 2 Mg 12 Si 7 , and AMgSi (A = Ca,Sr,Ba) were calculated. • All AMgSi are quite stable compared to mixture of A 2 Si and Mg 2 Si. • Ba 2 Mg 4 Si 3 and Sr 2 Mg 4 Si 3 are predicted to be stable, but Ca 2 Mg 4 Si 3 is not. • Ca 2 Mg 12 Si 7 and Sr 2 Mg 12 Si 7 are energetically unstable. • Stability of Ba 2 Mg 12 Si 7 is a tender subject. -- Abstract: In order to evaluate the relative stability of A 2 Mg 4 Si 3 , A 2 Mg 12 Si 7 , and AMgSi (A = Ca, Sr, and Ba) in the A 2 Si–Mg 2 Si system, electronic energy changes in the formation of these compounds were calculated using a density-functional theory with the Perdew–Wang generalized gradient approximations. It was found that (1) AMgSi’s are quite stable compared to equi-molar mixture of A 2 Si and Mg 2 Si, (2) Ba 2 Mg 4 Si 3 and Sr 2 Mg 4 Si 3 are also stable, (3) Ca 2 Mg 4 Si 3 and Ca 2 Mg 12 Si 7 are less stable than the mixture of CaMgSi and Mg 2 Si, and (4) Stability of Ba 2 Mg 12 Si 7 is a tender subject and Sr 2 Mg 12 Si 7 is energetically unstable compared to the mixture of Sr 2 Mg 4 Si 3 (or, SrMgSi) and Mg 2 Si. The presence of Sr 2 Mg 12 Si 7 may be due to the vibrational and/or configurational entropy, which are not treated in the present study. From the calculated electronic densities of state, complex compounds of SrMgSi and Mg 2 Si have both p-type and n-type character, depending on the ratio of SrMgSi and Mg 2 Si in that compound

Role of N-methyl-2-pyrrolidone for preparation of Fe{sub 3}O{sub 4}@SiO{sub 2} controlled the shell thickness

Energy Technology Data Exchange (ETDEWEB)

Wee, Sung-Bok [Hanyang University, Division of Materials Science and Engineering (Korea, Republic of); Oh, Hyeon-Cheol [Korea Nano Plus, Inc. (Korea, Republic of); Kim, Tae-Gyun; An, Gye-Seok; Choi, Sung-Churl, E-mail: choi0505@hanyang.ac.kr [Hanyang University, Division of Materials Science and Engineering (Korea, Republic of)

2017-04-15

We developed a simple and novel approach for the synthesis of Fe{sub 3}O{sub 4}@SiO{sub 2} nanoparticles with controlled shell thickness, and studied the mechanism. The introduction of N-methyl-2-pyrrolidone (NMP) led to trapping of monomer nuclei in single shell and controlled the shell thickness. Fe{sub 3}O{sub 4}@SiO{sub 2} controlled the shell thickness, showing a high magnetization value (64.47 emu/g). Our results reveal the role and change in the chemical structure of NMP during the core-shell synthesis process. NMP decomposed to 4-aminobutanoic acid in alkaline condition and decreased the hydrolysis rate of the silica coating process.
(Phosphinoalkyl)silanes. 4.(1) Hydrozirconation as a Non-Photochemical Route to (Phosphinopropyl)silanes: Facile Assembly of the Bis(3-(diphenylphosphino)propyl)silyl ("biPSi") Ligand Framework. Access to the Related Poly(3-(dimethylsilyl)propyl)phosphines R(n)()P(CH(2)CH(2)CH(2)SiMe(2)H)(3)(-)(n)() (n = 1, R = Ph; n = 0).

Science.gov (United States)

Zhou, Xiaobing; Stobart, Stephen R.; Gossage, Robert A.

1997-08-13

Treatment of SiEt(3)(CH=CH(2)) with ZrCp(2)HCl (Schwartz's reagent) followed by reaction with PPh(2)Cl provides a high-yield (75%) route to Ph(2)PCH(2)CH(2)SiEt(3), and accordingly hydrozirconation of CH(2)=CHCH(2)SiHMe(2) affords the intermediate ZrCp(2)(CH(2)CH(2)CH(2)SiHMe(2))Cl (2). The latter, which is very sensitive to hydrolysis and reacts with HCl forming SiHMe(2)Pr(n)() and with NBS or I(2) affording SiHMe(2)CH(2)CH(2)CH(2)X (X = Br (3), I (4)), behaves similarly with PPh(2)Cl, PPhCl(2), or PBr(3) undergoing cleavage to the known Ph(2)PCH(2)CH(2)CH(2)SiMe(2)H (i.e. chelH, A) and the novel bis- and tris(silylpropyl)phosphines PhP(CH(2)CH(2)CH(2)SiMe(2)H)(2) (5) and P(CH(2)CH(2)CH(2)SiMe(2)H)(3) (6), respectively, with concomitant formation of ZrCp(2)Cl(2). Corresponding hydroboration of allylsilanes is facile, but subsequent phosphine halide cleavage yields (phosphinoalkyl)silanes only as constituents of intractable mixtures. Hydrozirconation followed by phosphination with PPh(2)Cl also converts SiHMe(CH(2)CH=CH(2))(2) to SiHMe(CH(2)CH(2)CH(2)PPh(2))(2) (i.e. biPSiH, B) together with a propyl analogue Ph(2)PCH(2)CH(2)CH(2)SiMe(Pr(n)())H (7) of A (ca. 2:1 ratio), as well as SiH(CH(2)CH=CH(2))(3) to a mixture (ca. 5:2:1 ratio) of SiH(CH(2)CH(2)CH(2)PPh(2))(3) (i.e. triPSiH, C), a new analogue SiH(Pr(n)())(CH(2)CH(2)CH(2)PPh(2))(2) (8) of B, and a further analogue Ph(2)PCH(2)CH(2)CH(2)SiHPr(n)()(2) (9) of A. A further analogue SiH(2)(CH(2)CH(2)CH(2)PPh(2))(2) (10) of biPSiH (B) is obtained similarly starting from SiH(2)(CH(2)CH=CH(2))(2). Steric control of silylalkyl cleavage from 2 is indicated by the fact that, like PPh(2)Cl (which forms B), two further biPSiH analogues SiH(Me)[CH(2)CH(2)CH(2)P(n-hex)(2)](2) (11) and SiH(Me)(CH(2)CH(2)CH(2)PPhBz)(2) (12) were obtained using P(n-hex)(2)Cl (i.e. n-hex = CH(3)(CH(2))(4)CH(2)-) or PPhBzCl (i.e. Bz = -CH(2)C(6)H(5)), respectively, whereas neither PPr(i)(2)Cl nor PBu(t)(2)Cl led to (phosphinoalkyl)silane formation
Si3N4 ceramic cutting tool sintered with CeO2 and Al2O3 additives with AlCrN coating

Directory of Open Access Journals (Sweden)

José Vitor Candido Souza

2011-12-01

Full Text Available Ceramic cutting tools are showing a growing market perspective in terms of application on machining operations due to their high hardness, wear resistance, and machining without a cutting fluid, therefore are good candidates for cast iron and Nickel superalloys machining. The objective of the present paper was the development of Si3N4 based ceramic cutting insert, characterization of its physical and mechanical properties, and subsequent coating with AlCrN using a PVD method. The characterization of the coating was made using an optical profiler, XRD, AFM and microhardness tester. The results showed that the tool presented a fracture toughness of 6.43 MPa.m½ and hardness of 16 GPa. The hardness reached 31 GPa after coating. The machining tests showed a decrease on workpiece roughness when machining with coated insert, in comparison with the uncoated cutting tool. Probably this fact is related to hardness, roughness and topography of AlCrN.
Reduction in interface defect density in p-BaSi2/n-Si heterojunction solar cells by a modified pretreatment of the Si substrate

Science.gov (United States)

Yamashita, Yudai; Yachi, Suguru; Takabe, Ryota; Sato, Takuma; Emha Bayu, Miftahullatif; Toko, Kaoru; Suemasu, Takashi

2018-02-01

We have investigated defects that occurred at the interface of p-BaSi2/n-Si heterojunction solar cells that were fabricated by molecular beam epitaxy. X-ray diffraction measurements indicated that BaSi2 (a-axis-oriented) was subjected to in-plane compressive strain, which relaxed when the thickness of the p-BaSi2 layer exceeded 50 nm. Additionally, transmission electron microscopy revealed defects in the Si layer near steps that were present on the Si(111) substrate. Deep level transient spectroscopy revealed two different electron traps in the n-Si layer that were located at 0.33 eV (E1) and 0.19 eV (E2) below the conduction band edge. The densities of E1 and E2 levels in the region close to the heterointerface were approximately 1014 cm-3. The density of these electron traps decreased below the limits of detection following Si pretreatment to remove the oxide layers from the n-Si substrate, which involved heating the substrate to 800 °C for 30 min under ultrahigh vacuum while depositing a layer of Si (1 nm). The remaining traps in the n-Si layer were hole traps located at 0.65 eV (H1) and 0.38 eV (H2) above the valence band edge. Their densities were as low as 1010 cm-3. Following pretreatment, the current versus voltage characteristics of the p-BaSi2/n-Si solar cells under AM1.5 illumination were reproducible with conversion efficiencies beyond 5% when using a p-BaSi2 layer thickness of 100 nm. The origin of the H2 level is discussed.
Electron-impact ionization of SiCl{sub 3} using an improved crossed fast-neutral-beam - electron-beam apparatus

Energy Technology Data Exchange (ETDEWEB)

Mahoney, J M; Gutkin, M V; Tarnovsky, V; Becker, K [Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, NJ 07030 (United States)], E-mail: kbecker@poly.edu

2008-05-15

The fast-neutral-beam technique is a versatile approach to the determination of absolute cross sections for electron-impact ionization of atoms, stable molecules as well as free radicals and metastable species. A fast neutral beam of the species under study is prepared by charge-transfer neutralization of a mass-selected ion beam and the species are subsequently ionized by an electron beam. Mass- and energy-dispersive selection separates singly from multiply charged ions and parent from fragment ions and allows the determination of partial ionization cross sections. Here we describe some major improvements that were made recently to the fast-beam apparatus that has been used extensively for ionization cross section measurements for the past 15 years in our group. Experiments using well-established ionization cross sections in conjunction with extensive ion trajectory simulations were carried out to test the satisfactory performance of the modified fast-neutral-beam apparatus. We also report absolute partial cross sections for the formation of various singly charged positive ions produced by electron impact on SiCl{sub 3} for impact energies from threshold to 200 eV in the modified fast-beam apparatus.
(Zn-doped PVA)/n-4H-SiC (MPS)

Indian Academy of Sciences (India)

2018-05-23

May 23, 2018 ... A comparative study on dielectric behaviours of Au/(Zn-doped. PVA)/n-4H-SiC .... To form MPS structures, the prepared PVA (Zn nanoparticle- doped) ..... 95 2885. [26] MacCallum J R and Vincent C A 1989 Polymer electrolyte.
Microstructure and strain distribution in freestanding Si membrane strained by Si{sub x}N{sub y} deposition

Energy Technology Data Exchange (ETDEWEB)

Gao Hongye, E-mail: qgaohongye@msn.com [Faculty of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Ikeda, Ken-ichi; Hata, Satoshi; Nakashima, Hideharu [Faculty of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Wang Dong; Nakashima, Hiroshi [Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

2010-09-25

Research highlights: {yields} Strain is introduced by deposition of amorphous Si{sub x}N{sub y} to improve the carrier mobility for a relatively large-size freestanding semiconductor film, which can be used for the fabrication of relatively large devices such like a bipolar junction transistor. However, standard Raman spectroscopy and X-ray diffraction cannot provide sufficient lateral resolution to the strain in a relatively long (x {mu}m in length) and thin (x nm in thickness) freestanding semiconductor film. {yields} In present research, strain in a bridge-shaped freestanding Si membrane (FSSM) was measured by convergent-beam electron diffraction (CBED) and finite element method (FEM). Compressive strain distribution was shown in three dimensions (3D) in FSSM, where no threading dislocation or stacking fault was found. Relaxation of the strain in FSSM in 3D was discussed based on a comparison of the strain magnitudes in FSSM as measured by CBED and FEM. - Abstract: Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous Si{sub x}N{sub y} layer was measured by convergent-beam electron diffraction (CBED). CBED results show that the strain magnitude depends negatively on the FSSM thickness. FEM is a supplement of the result of CBED due to the relaxation of TEM samples during fabricating. The FEM analysis results ascertain the strain property in three dimensions, and show that the strain magnitude depends negatively on the length of FSSM, and the magnitude of the compressive strain in FSSM increases as the position is closer to the upper Si/Si{sub x}N{sub y} interface.
Al2O3 Disk Supported Si3N4 Hydrogen Purification Membrane for Low Temperature Polymer Electrolyte Membrane Fuel Cells.

Science.gov (United States)

Liu, Xiaoteng; Christensen, Paul A; Kelly, Stephen M; Rocher, Vincent; Scott, Keith

2013-12-05

Reformate gas, a commonly employed fuel for polymer electrolyte membrane fuel cells (PEMFCs), contains carbon monoxide, which poisons Pt-containing anodes in such devices. A novel, low-cost mesoporous Si3N4 selective gas separation material was tested as a hydrogen clean-up membrane to remove CO from simulated feed gas to single-cell PEMFC, employing Nafion as the polymer electrolyte membrane. Polarization and power density measurements and gas chromatography showed a clear effect of separating the CO from the gas mixture; the performance and durability of the fuel cell was thereby significantly improved.
Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

Energy Technology Data Exchange (ETDEWEB)

Kumar, Praveen; Tuteja, Mohit; Kesaria, Manoj; Waghmare, U. V.; Shivaprasad, S. M. [Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560 064 (India)

2012-09-24

We present here the spontaneous formation of catalyst-free, self-aligned crystalline (wurtzite) nanorods on Si(111) surfaces modified by surface nitridation. Nanorods grown by molecular beam epitaxy on bare Si(111) and non-stoichiometric silicon nitride interface are found to be single crystalline but disoriented. Those grown on single crystalline Si{sub 3}N{sub 4} intermediate layer are highly dense c-oriented hexagonal shaped nanorods. The morphology and the self-assembly of the nanorods shows an ordered epitaxial hexagonal superstructure, suggesting that they are nucleated at screw dislocations at the interface and grow spirally in the c-direction. The aligned nanorod assembly shows high-quality structural and optical emission properties.
Optical properties of SrAl{sub 2−x}Si{sub x}O{sub 4−x}N{sub x}:Eu{sup 2+}, Dy{sup 3+} phosphors for AC-LEDs

Energy Technology Data Exchange (ETDEWEB)

Li, Bowen; Xie, Qidi; Qin, Huanhui [School of Applied Physics and Materials, Wuyi University, Jiangmen, Guangdong 529020 (China); Zhang, Mei, E-mail: zmjenny@163.com [School of Applied Physics and Materials, Wuyi University, Jiangmen, Guangdong 529020 (China); He, Xin; Long, Yongbing [School of Applied Physics and Materials, Wuyi University, Jiangmen, Guangdong 529020 (China); Xing, Lusheng [LED Institute, Wuyi University, Jiangmen, Guangdong 529020 (China)

2016-09-15

Series of green emitting SrAl{sub 2−x}Si{sub x}O{sub 4−x}N{sub x}:Eu{sup 2+}, Dy{sup 3+} phosphors have been synthesized via a high temperature solid-state method. The effects of (SiN){sup +} on phase structural, emission and excitation spectra and decay curves were investigated systematically. The X-ray diffraction (XRD) patterns show that the maximum amount of solubility is about x = 0.10. The emission wavelength can be red-shifted from 509 to 515 nm with increasing (SiN){sup +} concentration. Meanwhile, the average lifetime of samples are shortened from 845.86 to 765.34 ms, which can appropriately compensate for the AC time gap and the emission color of AC-LEDs will be improved. Finally, we use these phosphors and near UV-chips to fabricate LEDs, which show more stable luminescence properties accompanying with the decrease of the luminous efficiency as the (SiN){sup +} content increases. - Highlights: • The incorporation of (SiN){sup +} can shift the emission spectra to a long wavelength. • The color purity of SrAl{sub 2−x}Si{sub x}O{sub 4−x}N{sub x}:Eu{sup 2+}, Dy{sup 3+} phosphor can be improved to 48.65%. • The performance of pc-LEDs confirms (SiN){sup +} can improve the stable of phosphors.
A promising tritium breeding material: Nanostructured 2Li2TiO3-Li4SiO4 biphasic ceramic pebbles

Science.gov (United States)

Dang, Chen; Yang, Mao; Gong, Yichao; Feng, Lan; Wang, Hailiang; Shi, Yanli; Shi, Qiwu; Qi, Jianqi; Lu, Tiecheng

2018-03-01

As an advanced tritium breeder material for the fusion reactor blanket of the International Thermonuclear Experimental Reactor (ITER), Li2TiO3-Li4SiO4 biphasic ceramic has attracted widely attention due to its merits. In this paper, the uniform precursor powders were prepared by hydrothermal method, and nanostructured 2Li2TiO3-Li4SiO4 biphasic ceramic pebbles were fabricated by an indirect wet method at the first time. In addition, the composition dependence (x/y) of their microstructure characteristics and mechanical properties were investigated. The results indicated that the crush load of biphasic ceramic pebbles was better than that of single phase ceramic pebbles under identical conditions. The 2Li2TiO3-Li4SiO4 ceramic pebbles have good morphology, small grain size (90 nm), satisfactory crush load (37.8 N) and relative density (81.8 %T.D.), which could be a promising breeding material in the future fusion reactor.
Electrical characterization of defects introduced in n-Si during electron beam deposition of Pt

Energy Technology Data Exchange (ETDEWEB)

Auret, F.D.; Coelho, S.M.M.; Nel, J.M.; Meyer, W.E. [Physics Department, University of Pretoria, Pretoria (South Africa)

2012-10-15

We have used deep level transient spectroscopy (DLTS) and high resolution DLTS to characterize the defects introduced in epitaxially grown n-type, P-doped, Si during electron beam deposition (EBD) of Pt for Schottky contact formation. The identity of some of these defects could be established by comparing their properties to those of well-known defects introduced by high energy electron irradiation of the same material. The most prominent EBD-induced defects thus identified were the E-center (VP center), the A-center (VO center), interstitial carbon (C{sub i}), and the interstitial carbon-substitutional carbon (C{sub i}C{sub s}) pair. EBD also introduced some defects that were not observed after high energy electron irradiation. DLTS depth profiling revealed that the main defects, VO and VP, could be detected up to 0.5 {mu}m below the metal-Si interface. Shielding the sample from particles originating in the region of the electron beam significantly reduced defect introduction and resulted in Schottky contacts with improved rectification properties. Finally, we have found that exposing the sample to EBD conditions, without actually depositing metal, introduced a different set of electron traps, not introduced by the EBD process. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Selective-area growth of GaN nanowires on SiO{sub 2}-masked Si (111) substrates by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Kruse, J. E.; Doundoulakis, G. [Department of Physics, University of Crete, P. O. Box 2208, 71003 Heraklion (Greece); Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, N. Plastira 100, 70013 Heraklion (Greece); Lymperakis, L. [Max-Planck-Institut für Eisenforschung, Max-Planck-Straße 1, 40237 Düsseldorf (Germany); Eftychis, S.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Department of Physics, University of Crete, P. O. Box 2208, 71003 Heraklion (Greece); Adikimenakis, A.; Tsagaraki, K.; Androulidaki, M.; Konstantinidis, G. [Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, N. Plastira 100, 70013 Heraklion (Greece); Olziersky, A.; Dimitrakis, P.; Ioannou-Sougleridis, V.; Normand, P. [Institute of Nanoscience and Nanotechnology, NCSR Demokritos, Patriarchou Grigoriou and Neapoleos 27, 15310 Aghia Paraskevi, Athens (Greece); Koukoula, T.; Kehagias, Th.; Komninou, Ph. [Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)

2016-06-14

We analyze a method to selectively grow straight, vertical gallium nitride nanowires by plasma-assisted molecular beam epitaxy (MBE) at sites specified by a silicon oxide mask, which is thermally grown on silicon (111) substrates and patterned by electron-beam lithography and reactive-ion etching. The investigated method requires only one single molecular beam epitaxy MBE growth process, i.e., the SiO{sub 2} mask is formed on silicon instead of on a previously grown GaN or AlN buffer layer. We present a systematic and analytical study involving various mask patterns, characterization by scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy, as well as numerical simulations, to evaluate how the dimensions (window diameter and spacing) of the mask affect the distribution of the nanowires, their morphology, and alignment, as well as their photonic properties. Capabilities and limitations for this method of selective-area growth of nanowires have been identified. A window diameter less than 50 nm and a window spacing larger than 500 nm can provide single nanowire nucleation in nearly all mask windows. The results are consistent with a Ga diffusion length on the silicon dioxide surface in the order of approximately 1 μm.
Actinide-carbon bonds: insertion reactions of carbon monoxide, tert-butyl isocyanide, and tert-butyl cyanide into [(Me3Si)2N]2MCH2Si(Me)2NSiMe3

International Nuclear Information System (INIS)

Simpson, S.J.; Andersen, R.A.

1981-01-01

The thorium or uranium metallacycles [(Me 2 Si) 2 N] 2 MCH 2 Si(Me) 2 NSiMe 3 (I) react with tert-butyl cyanide to give the six-membered ring compounds [(Me 3 Si) 2 N] 2 MN = C(t-Bu)CH 2 Si(Me) 2 NSiMe 3 . The metallacycles (I) also react with the isoelectronic molecules tert-butyl isocyanide and carbon monoxide to give the unique five-membered ring compounds with exocyclic carbon-carbon double bonds, [(Me 3 Si) 2 N] 2 MXC(=CH 2 )Si(Me) 2 NSiMe 3 , where X is t-BuN or oxygen. The four-membered ring metallacycles (I) give simple coordination complexes of the type [(Me 3 Si) 2 N] 2 MCH 2 Si-(Me) 2 NSiMe 3 (N 3 SiMe 3 ) with trimethylsilyl azide
Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

Science.gov (United States)

Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

2012-11-01

We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.
High energy electron beam inactivation of lactate dehydrogenase suspended in different aqueous media

International Nuclear Information System (INIS)

Hategan, A.; Popescu, A.; Butan, C.; Oproiu, C.; Hategan, D.; Morariu, V.V.

1999-01-01

The direct and indirect effects of 5 MeV electron beam irradiation in the range (0-400 Gy) at 20 degC, 0 degC, -3 degC and -196 degC, as well as the influence of the aqueous suspending medium (ultrapure water and heavy water) on the total enzymatic activity of lactate dehydrogenase (LDH) have been studied. Our results showed an exponential decrease on the enzymatic activity of irradiated LDH, at all irradiation temperatures, independently of the direct or indirect action of radiation. The temperature gradient used to lower the temperature of the samples to -196 degC drastically influences the results. Freeze-thawing in two steps down to -196 degC protects LDH to radiation, in the dose range used. The data obtained here inform on the high energy electrons effects on the enzymatic activity loss during irradiation and during thawing, when the subsequent growth of the water crystals influences the three dimensional structure of the enzyme. A 99.98% concentration of D 2 O in the suspending medium of the enzyme decreases the global enzymatic activity, but reduces the rate of radiation inactivation of the enzyme. The rate of radiation inactivation of the enzyme suspended in ultrapure water is reduced when compared to the enzyme suspended in bidistilled water, but compared to the D 2 O suspended enzyme is lightly increased. (author)
Hydrothermal synthesis, characterization, and thermal properties of alumino silicate azide sodalite, Na8[AlSiO4]6(N3)2

Science.gov (United States)

Borhade, A. V.; Wakchaure, S. G.; Dholi, A. G.; Kshirsagar, T. A.

2017-07-01

First time we report the synthesis, structural characterization and thermal behavior of an unusual N3 - containing alumino-silicate sodalite mineral. Azide sodalite, Na8[AlSiO4]6(N3)2 has been synthesized under hydrothermal conditions at 433 K in steel lined Teflon autoclave. The structural and microstructural properties of azide sodalite mineral was characterized by various methods including FT-IR, XRD, SEM, TGA, and MAS NMR. Crystal structure have been refined by Rietveld method in P\\bar 43n space group, indicating that the N3 - sodalite has cubic in lattice. High temperature study was carried out to see the effect of thermal expansion on cell dimension ( a o) of azide sodalite. Thermal behavior of sodalite was also assessed by thermogravimetric method.
Photoluminescence and Energy Transfer Properties with Y+SiO4 Substituting Ba+PO4 in Ba3Y(PO4)3:Ce(3+)/Tb(3+), Tb(3+)/Eu(3+) Phosphors for w-LEDs.

Science.gov (United States)

Li, Kai; Liang, Sisi; Shang, Mengmeng; Lian, Hongzhou; Lin, Jun

2016-08-01

A series of Ce(3+), Tb(3+), Eu(3+) doped Ba2Y2(PO4)2(SiO4) (BYSPO) phosphors were synthesized via the high-temperature solid-state reaction route. X-ray diffraction, high-resolution transmission electron microscopy, Fourier transform infrared, solid-state NMR, photoluminescence (PL) including temperature-dependent PL, and fluorescent decay measurements were conducted to characterize and analyze as-prepared samples. BYSPO was obtained by the substitution of Y+SiO4 for Ba+PO4 in Ba3Y(PO4)3 (BYPO). The red shift of PL emission from 375 to 401 nm occurs by comparing BYSPO:0.14Ce(3+) with BYPO:0.14Ce(3+) under 323 nm UV excitation. More importantly, the excitation edge can be extended from 350 to 400 nm, which makes it be excited by UV/n-UV chips (330-410 nm). Tunable emission color from blue to green can be observed under 365 nm UV excitation based on the energy transfer from Ce(3+) to Tb(3+) ions after codoping Tb(3+) into BYSPO:0.14Ce(3+). Moreover, energy transfer from Tb(3+) to Eu(3+) ions also can be found in BYSPO:Tb(3+),Eu(3+) phosphors, resulting in the tunable color from green to orange red upon 377 nm UV excitation. Energy transfer properties were demonstrated by overlap of excitation spectra, variations of emission spectra, and decay times. In addition, energy transfer mechanisms from Ce(3+) to Tb(3+) and Tb(3+) to Eu(3+) in BYSPO were also discussed in detail. Quantum yields and CIE chromatic coordinates were also presented. Generally, the results suggest their potential applications in UV/n-UV pumped LEDs.
GaN-based integrated photonics chip with suspended LED and waveguide

Science.gov (United States)

Li, Xin; Wang, Yongjin; Hane, Kazuhiro; Shi, Zheng; Yan, Jiang

2018-05-01

We propose a GaN-based integrated photonics chip with suspended LED and straight waveguide with different geometric parameters. The integrated photonics chip is prepared by double-side process. Light transmission performance of the integrated chip verse current is quantitatively analyzed by capturing light transmitted to waveguide tip and BPM (beam propagation method) simulation. Reduction of the waveguide width from 8 μm to 4 μm results in an over linear reduction of the light output power while a doubling of the length from 250 μm to 500 μm only results in under linear decrease of the output power. Free-space data transmission with 80 Mbps random binary sequence of the integrated chip is capable of achieving high speed data transmission via visible light. This study provides a potential approach for GaN-based integrated photonics chip as micro light source and passive optical device in VLC (visible light communication).
The adhesion and tribology analysis of polycrystalline diamond coated on Si3N4 substrate

International Nuclear Information System (INIS)

Hamzah, E.; Purniawan, A.

2007-01-01

Cauliflower and octahedral structure of polycrystalline diamond was deposited on silicon nitride (Si 3 N 4 ) substrate by microwave plasma assisted chemical vapor deposition (MPACVD). In our earlier work, the effects of deposition parameters namely, % Methane (CH 4 ) diluted in hydrogen (H 2 ), microwave power and chamber pressure on surface morphology were studied. In the present work the polycrystalline diamond coating adhesion and tribology behaviour were investigated. Rockwell C hardness tester and pin-on-disk tribometer were used to determine the adhesion and tribology properties on diamond coating, respectively. The morphology of the diamond before and after indentation was observed using field emission scanning electron microscopy (FESEM). Based on the adhesion analysis results, it was found that octahedral morphology has better adhesion than cauliflower structure. It was indicated by few cracks and less peel-off than cauliflower structure of polycrystalline diamond after indentation. Based on tribology analysis, polycrystalline diamond coated on substrate has better tribology properties than uncoated substrate. (author)

Growth orientation dependence of Si doping in GaAsN

Energy Technology Data Exchange (ETDEWEB)

Han, Xiuxun, E-mail: xxhan@semi.ac.cn [Laboratory of Clean Energy Chemistry and Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); Dong, Chen [Laboratory of Clean Energy Chemistry and Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); Feng, Qiang [Optoelectronic Department, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China); Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511 (Japan)

2015-02-07

The incorporation of Si in GaAsN alloys grown simultaneously on (100), (311)A, (311)B, and (211)B GaAs substrates by the chemical beam epitaxy has been investigated. The decrease in electron concentration with the increasing N composition suggests the occurrence of N and Si interaction, whereas the interaction exhibits evidently different extent depending on the growth orientation. Combined with the secondary ion mass spectrometry and photoluminescence measurements, it is revealed that (311)B and (211)B are the promising substrate orientations to reduce the N-Si passivation and improve n-type Si doping in GaAsN over a wider N composition range. A surface bonding model is utilized to explain the plane polarity dependent incorporation behaviors of Si and N.
Al2O3 Disk Supported Si3N4 Hydrogen Purification Membrane for Low Temperature Polymer Electrolyte Membrane Fuel Cells

Directory of Open Access Journals (Sweden)

Xiaoteng Liu

2013-12-01

Full Text Available Reformate gas, a commonly employed fuel for polymer electrolyte membrane fuel cells (PEMFCs, contains carbon monoxide, which poisons Pt-containing anodes in such devices. A novel, low-cost mesoporous Si3N4 selective gas separation material was tested as a hydrogen clean-up membrane to remove CO from simulated feed gas to single-cell PEMFC, employing Nafion as the polymer electrolyte membrane. Polarization and power density measurements and gas chromatography showed a clear effect of separating the CO from the gas mixture; the performance and durability of the fuel cell was thereby significantly improved.
Si3N4/Si/In0.05Ga0.95As/n endash GaAs metal endash insulator endash semiconductor devices

International Nuclear Information System (INIS)

Park, D.; Li, D.; Tao, M.; Fan, Z.; Botchkarev, A.E.; Mohammad, S.N.; Morkoc, H.

1997-01-01

We report a novel metal endash insulator endash semiconductor (MIS) structure exhibiting a pseudomorphic In 0.05 Ga 0.95 As layer on GaAs with interface state densities in the low 10 11 eV -1 cm -2 . The structure was grown by a combination of molecular beam epitaxy and chemical vapor deposition methods. The hysteresis and frequency dispersion of the MIS capacitor were lower than 100 mV, some of them as low as 30 mV under a field swing of about ±1.3 MV/cm. The 150-Angstrom-thick In 0.05 Ga 0.95 As channel between Si and GaAs is found to bring about a change in the minority carrier recombination behavior of the GaAs channel, in the same way as done by In 0.53 Ga 0.47 As channel MIS structures. Self-aligned gate depletion mode In 0.05 Ga 0.95 As metal endash insulator endash semiconductor field-effect transistors having 3 μm gate lengths exhibited field-effect bulk mobility of 1400 cm 2 /Vs and transconductances of about 170 mS/mm. copyright 1997 American Institute of Physics
In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC

Energy Technology Data Exchange (ETDEWEB)

Chen, Bin, E-mail: chenbinmse@gmail.com; Chen, Jun; Yao, Yuanzhao; Sekiguchi, Takashi [National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Matsuhata, Hirofumi; Okumura, Hajime [National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

2014-07-28

Using the fine control of an electron beam (e-beam) in scanning electron microscopy with the capabilities of both electrical and optical imaging, the stacking fault (SF) formation together with its tuning of carrier lifetime was in situ monitored and investigated in p-type 4H-SiC homoepitaxial films. The SFs were formed through engineering basal plane dislocations with the energy supplied by the e-beam. The e-beam intensity required for the SF formation in the p-type films was ∼100 times higher than that in the n-type ones. The SFs reduced the minority-carrier lifetime in the p-type films, which was opposite to that observed in the n-type case. The reason for the peculiar SF behavior in the p-type 4H-SiC is discussed with the cathodoluminescence results.
Are Nonadiabatic Reaction Dynamics the Key to Novel Organosilicon Molecules? The Silicon (Si(3P))-Dimethylacetylene (C4H6(X1A1g)) System as a Case Study.

Science.gov (United States)

Thomas, Aaron M; Dangi, Beni B; Yang, Tao; Kaiser, Ralf I; Lin, Lin; Chou, Tzu-Jung; Chang, Agnes H H

2018-06-06

The bimolecular gas phase reaction of ground-state silicon (Si; 3 P) with dimethylacetylene (C 4 H 6 ; X 1 A 1g ) was investigated under single collision conditions in a crossed molecular beams machine. Merged with electronic structure calculations, the data propose nonadiabatic reaction dynamics leading to the formation of singlet SiC 4 H 4 isomer(s) and molecular hydrogen (H 2 ) via indirect scattering dynamics along with intersystem crossing (ISC) from the triplet to the singlet surface. The reaction may lead to distinct energetically accessible singlet SiC 4 H 4 isomers ( 1 p8- 1 p24) in overall exoergic reaction(s) (-107 -20 +12 kJ mol -1 ). All feasible reaction products are either cyclic, carry carbene analogous silylene moieties, or carry C-Si-H or C-Si-C bonds that would require extensive isomerization from the initial collision complex(es) to the fragmenting singlet intermediate(s). The present study demonstrates the first successful crossed beams study of an exoergic reaction channel arising from bimolecular collisions of silicon, Si( 3 P), with a hydrocarbon molecule.
Transfer-free synthesis of graphene-like atomically thin carbon films on SiC by ion beam mixing technique

Science.gov (United States)

Zhang, Rui; Chen, Fenghua; Wang, Jinbin; Fu, Dejun

2018-03-01

Here we demonstrate the synthesis of graphene directly on SiC substrates at 900 °C using ion beam mixing technique with energetic carbon cluster ions on Ni/SiC structures. The thickness of 7-8 nm Ni films was evaporated on the SiC substrates, followed by C cluster ion bombarding. Carbon cluster ions C4 were bombarded at 16 keV with the dosage of 4 × 1016 atoms/cm2. After thermal annealing process Ni silicides were formed, whereas C atoms either from the decomposition of the SiC substrates or the implanted contributes to the graphene synthesis by segregating and precipitating process. The limited solubility of carbon atoms in silicides, involving SiC, Ni2Si, Ni5Si2, Ni3Si, resulted in diffusion and precipitation of carbon atoms to form graphene on top of Ni and the interface of Ni/SiC. The ion beam mixing technique provides an attractive production method of a transfer-free graphene growth on SiC and be compatible with current device fabrication.
Influence of PECVD deposited SiNx passivation layer thickness on In0.18Al0.82N/GaN/Si HEMT

International Nuclear Information System (INIS)

Singh, Sarab Preet; Liu, Yi; Ngoo, Yi Jie; Kyaw, Lwin Min; Bera, Milan Kumar; Chor, Eng Fong; Dolmanan, S B; Tripathy, Sudhiranjan

2015-01-01

The influence of plasma enhanced chemical vapour deposited (PECVD) silicon nitride (SiN x ) passivation film thickness on In 0.18 Al 0.82 N/GaN/Si heterostructures and HEMTs has been investigated. The formation of Si 3 N 4 was confirmed by x-ray photoelectron spectroscopy (XPS) measurements. X-ray reflectivity (XRR) measurements reveal that both the density and roughness of the SiN x film increase with increasing film thickness. With an increase in SiN x film thickness, a significant increase in two-dimensional electron gas (2DEG) density, drain current, extrinsic transconductance and negative threshold voltage shift of the In 0.18 Al 0.82 /GaN/Si HEMTs are observed. An optimal thickness of SiN x is ∼100 nm and it yields a substantial increase in 2DEG density (∼30%) with a minimum sheet resistance for In 0.18 Al 0.82 N/GaN/Si heterostructures. Furthermore, we correlate the observed SiN x film thickness-dependent electrical characteristics of In 0.18 Al 0.82 /GaN/Si HEMTs with the density of the SiN x film. (paper)
Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer

Science.gov (United States)

Xu, X.; Armitage, R.; Shinkai, Satoko; Sasaki, Katsutaka; Kisielowski, C.; Weber, E. R.

2005-05-01

Single-crystal GaN thin films have been deposited epitaxially on a HfN-buffered Si(111) substrates by molecular-beam epitaxy. The microstructural and compositional characteristics of the films were studied in detail by transmission electron microscopy (TEMs). Cross-sectional TEM investigations have revealed the crystallographic orientation relationship in different GaN /HfN/Si layers. GaN film polarity is studied by conventional TEM and convergent beam electron diffraction simulations, and the results show that the GaN film has a Ga polarity with relatively high density of inversion domains. Based on our observations, growth mechanisms related to the structural properties are discussed.
Novel oxide buffer approach for GaN integration on Si(111) platform through Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} bi-layer

Energy Technology Data Exchange (ETDEWEB)

Tarnawska, Lidia

2012-12-19

Motivation: Preparation of GaN virtual substrates on large-scale Si wafers is intensively pursued as a cost-effective approach for high power/high frequency electronics (HEMT's etc.) and optoelectronic applications (LED, LASER). However, the growth of high quality GaN layers on Si is hampered by several difficulties mainly related to a large lattice mismatch (-17%) and a huge difference in the thermal expansion coefficient (56%). As a consequence, GaN epitaxial layers grown on Si substrates show a high number of defects (threading dislocations etc.), which severely deteriorate the overall quality of the GaN films. Additionally, due to the different thermal expansion coefficients of the substrate and the film, um-thick GaN layers crack during post-growth cooling. To solve these integration problems, different semiconducting (e.g. AlN, GaAs, ZnO, HfN) and insulating (e.g. Al{sub 2}O{sub 3}, MgO, LiGaO{sub 2}) buffer layers, separating the Si substrate from the GaN film, are applied. Goal: In this thesis, a novel buffer approach for the integration of GaN on Si is proposed and investigated. The new approach employs Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} bilayer templates as a step-graded buffer to reduce the lattice mismatch between GaN and the Si(111) substrate. According to the bulk crystal lattices, since the Y{sub 2}O{sub 3} has an in-plane lattice misfit of -2% to Si, Sc{sub 2}O{sub 3} -7% to Y{sub 2}O{sub 3}, the lattice misfit between GaN and the substrate can be theoretically reduced by about 50% from -17% (GaN/Si) to -8% (GaN/Sc{sub 2}O{sub 3}). Experimental: The GaN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) heterostructures are prepared in a multichamber molecular beam epitaxy system on 4 inch Si(111) wafers. In order to obtain complete information on the structural quality of the oxide buffer as well as the GaN layer, synchrotron- and laboratory-based X-ray diffraction, transmission electron microscopy and photoluminescence measurements are performed. The
Synthesis and Luminescence Properties of Novel Ce(3+)- and Eu(2+)-Doped Lanthanum Bromothiosilicate La3Br(SiS4)2 Phosphors for White LEDs.

Science.gov (United States)

Lee, Szu-Ping; Liu, Shuang-De; Chan, Ting-Shan; Chen, Teng-Ming

2016-04-13

Novel Ce(3+)- and Eu(2+)-doped lanthanum bromothiosilicate La3Br(SiS4)2:Ce(3+)and La3Br(SiS4)2:Eu(2+) phosphors were prepared by solid-state reaction in an evacuated and sealed quartz glass ampule. The La3Br(SiS4)2:Ce(3+) phosphor generates a cyan emission upon excitation at 375 nm, whereas the La3Br(SiS4)2:Eu(2+) phosphor could be excited with extremely broad range from UV to blue region (300 to 600 nm) and generates a reddish-orange broadband emission centered at 640 nm. In addition, thermal luminescence properties of La3Br(SiS4)2:Ce(3+)and La3Br(SiS4)2:Eu(2+) phosphors from 20 to 200 °C were investigated. The combination of a 450 nm blue InGaN-based LED chip with the red-emitting La3Br(SiS4)2:Eu(2+) phosphor, and green-emitting BOSE:Eu(2+) commercial phosphor produced a warm-white light with the CRI value of ∼95 and the CCT of 5,120 K. Overall, these results show that the prepared phosphors may have potential applications in pc-WLED.
The uranium(VI) oxoazides [UO{sub 2}(N{sub 3}){sub 2}.CH{sub 3}CN], [(bipy){sub 2}(UO{sub 2}){sub 2}(N{sub 3}){sub 4}], [(bipy)UO{sub 2}(N{sub 3}){sub 3}]{sup -}, [UO{sub 2}(N{sub 3}){sub 4}]{sup 2-}, and [(UO{sub 2}){sub 2}(N{sub 3}){sub 8}]{sup 4-}

Energy Technology Data Exchange (ETDEWEB)

Haiges, Ralf; Christe, Karl O. [Loker Hydrocarbon Research Institute and Department of Chemistry, University of Southern California, Los Angeles, CA (United States); Vasiliu, Monica; Dixon, David A. [Department of Chemistry, The University of Alabama, Tuscaloosa, AL (United States)

2017-01-12

The reaction between [UO{sub 2}F{sub 2}] and an excess of Me{sub 3}SiN{sub 3} in acetonitrile solution results in fluoride-azide exchange and the uranium(VI) dioxodiazide adduct [UO{sub 2}(N{sub 3}){sub 2}.CH{sub 3}CN] was isolated in quantitative yield. The subsequent reaction of [UO{sub 2}(N{sub 3}){sub 2}.CH{sub 3}CN] with 2,2{sup '}-bipyridine (bipy) resulted in the formation of the azido-bridged binuclear complex [(bipy){sub 2}(UO{sub 2}){sub 2}(N{sub 3}){sub 4}]. The triazido anion [(bipy)UO{sub 2}(N{sub 3}){sub 3}]{sup -} was obtained by the reaction of [UO{sub 2}(N{sub 3}){sub 2}.CH{sub 3}CN] with stoichiometric amounts of bipy and the ionic azide [PPh{sub 4}][N{sub 3}]. The reaction of [UO{sub 2}(N{sub 3}){sub 2}] with two equivalents of the [PPh{sub 4}][N{sub 3}] resulted in the formation of the mononuclear tetraazido anion [UO{sub 2}(N{sub 3}){sub 4}]{sup 2-} as well as the azido-bridged binuclear anion [(UO{sub 2}){sub 2}(N{sub 3}){sub 8}]{sup 4-}. The novel uranium oxoazides were characterized by their vibrational spectra and in the case of [(bipy){sub 2}(UO{sub 2}){sub 2}(N{sub 3}){sub 4}].CH{sub 3}CN, [PPh{sub 4}][(bipy)UO{sub 2}(N{sub 3}){sub 3}], [PPh{sub 4}]{sub 2}[UO{sub 2}(N{sub 3}){sub 4}], [PPh{sub 4}]{sub 2}[UO{sub 2}(N{sub 3}){sub 4}].2CH{sub 3}CN, and [PPh{sub 4}]{sub 4}[(UO{sub 2}){sub 2}(N{sub 3}){sub 8}].4CH{sub 3}CN by their X-ray crystal structures. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)
Irradiation damage of SiC semiconductor device (I)

International Nuclear Information System (INIS)

Park, Ji Yeon; Kim, Weon Ju

2000-09-01

This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10 16 N + ions/cm 2 and 3.6 x 10 17 e/cm 2 and 1.08 x 10 18 e/cm 2 , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix
Irradiation damage of SiC semiconductor device (I)

Energy Technology Data Exchange (ETDEWEB)

Park, Ji Yeon; Kim, Weon Ju

2000-09-01

This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10{sup 16} N{sup +} ions/cm{sup 2} and 3.6 x 10{sup 17} e/cm{sup 2} and 1.08 x 10{sup 18} e/cm{sup 2} , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix.
Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy

Directory of Open Access Journals (Sweden)

M. Agrawal

2017-01-01

Full Text Available The stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy (PA-MBE has been studied. AlN nucleation layer and GaN layer were grown as a function of III/V ratio. GaN/AlN structure is found to form buried cracks when AlN is grown in the intermediate growth regime(III/V∼1and GaN is grown under N-rich growth regime (III/V<1. The III/V ratio determines the growth mode of the layers that influences the lattice mismatch at the GaN/AlN interface. The lattice mismatch induced interfacial stress at the GaN/AlN interface relaxes by the formation of buried cracks in the structure. Additionally, the stress also relaxes by misorienting the AlN resulting in two misorientations with different tilts. Crack-free layers were obtained when AlN and GaN were grown in the N-rich growth regime (III/V<1 and metal rich growth regime (III/V≥1, respectively. AlGaN/GaN high electron mobility transistor (HEMT heterostructure was demonstrated on 2-inch SiC that showed good two dimensional electron gas (2DEG properties with a sheet resistance of 480 Ω/sq, mobility of 1280 cm2/V.s and sheet carrier density of 1×1013 cm−2.
Ion beam synthesis of IrSi3 by implantation of 2 MeV Ir ions

International Nuclear Information System (INIS)

Sjoreen, T.P.; Chisholm, M.F.; Hinneberg, H.J.

1992-11-01

Formation of a buried IrSi 3 layer in (111) oriented Si by ion implantation and annealing has been studied at an implantation energy of 2 MeV for substrate temperatures of 450--550C. Rutherford backscattering (RBS), ion channeling and cross-sectional transmission electron microscopy showed that a buried epitaxial IrSi 3 layer is produced at 550C by implanting ≥ 3.4 x 10 17 Ir/cm 2 and subsequently annealing for 1 h at 1000C plus 5 h at 1100C. At a dose of 3.4 x 10 17 Ir/cm 2 , the thickness of the layer varied between 120 and 190 nm and many large IrSi 3 precipitates were present above and below the film. Increasing the dose to 4.4 x 10 17 Ir/cm 2 improved the layer uniformity at the expense of increased lattice damage in the overlying Si. RBS analysis of layer formation as a function of substrate temperature revealed the competition between the mechanisms for optimizing surface crystallinity vs. IrSi 3 layer formation. Little apparent substrate temperature dependence was evident in the as-implanted state but after annealing the crystallinity of the top Si layer was observed to deteriorate with increasing substrate temperature while the precipitate coarsening and coalescence improved
On the knowledge of the (NH4)3SiF7 type of structure

International Nuclear Information System (INIS)

Hofmann, B.; Hoppe, R.

1979-01-01

New obtained are Rb 3 SiF 7 (a = 7.95 9 ; c = 5.82 3 A), Cs 3 SiF 7 (a = 8.30 6 ; c = 6.17 0 A), Rb 3 TiF 7 (a = 8.20 2 ; c = 5.97 9 A), Cs 3 TiF 7 (a = 8.47 3 ; c = 6.31 3 A). and Cs 2 RbSiF 7 (a = 8.19 8 ; c = 6.01 9 A); Cs 2 KSiF 7 (a = 8.11 5 , c = 5.97 2 A), Rb 2 CsSiF 7 (a = 8.09 9 ; c = 5.89 9 A), Rb 2 KSiF 7 (a = 7.88 3 ; c = 5.72 4 A), all colourless, Rb 3 CrF 7 (a = 8.08 4 ; c = 5.90 2 A), Cs 3 CrF 7 (a 8.39 0 ; c = 6.24 7 A), both pink, K 3 MnF 7 (a = 11.14 6 ; b = 11.00 5 ; c = 5.63 1 A), Rb 3 MnF 7 (a = 8.05 0 ; c = 5.89 0 A), Cs 3 MnF 7 (a 8.36 9 ; c = 6.23 3 A), each lemon yellow, and Rb 3 NiF 7 (a = 7.97 8 ; c = 5.85 7 A) and Cs 3 NiF 7 (a = 8.30 7 ; c = 6.19 2 A), both bright carmine red. Proposals for structure, due to Guinier-Simon powder datas (Cu-Kα), are based on the assumption that these fluorides (K 3 MnF 7 exception) are isotypic with K 3 SiF 7 , P4/mbm. Calculations of the Madelung Part of Lattice Energy, MAPLE, confirm the adopted parameters of position. Effective Coordination Numbers, ECoN, calculated by use of Mean Fictive Ionic Radii, MEFIR, are calculated and discussed. Raman spectra indicate the presence of octahedral groups [MF 6 ] in case of Rb 3 SiF 7 , and Cs 3 TiF 7 . The magnetic behaviour of A 3 MnF 7 is measured (70-293 K). (author)
Keggin type polyoxometalate H4[αSiW12O40].nH2O as intercalant for hydrotalcite

Directory of Open Access Journals (Sweden)

Neza Rahayu Palapa

2017-06-01

Full Text Available The synthesis of hydrotalcite and polyoxometalate H4[αSiW12O40].nH2O with the ratio (2:1, (1:1, (1:2 and (1:3 has been done. The product of intercalation was characterized using FT-IR spectrophotometer, XRD, and TG-DTA. Polyoxometalate H4[αSiW12O40].nH2O intercalated layered double hydroxide was optimised to use as adsorbent Congo red dye. Characterization using FT-IR was not showing the optimal insertion process. The result using XRD characterization was showed successful of polyoxometalate H4[αSiW12O40].nH2O inserted layered double hydroxide with a ratio (1:1 which the basal spacing was expanded from 7,8 Ȧ to 9,81 Ȧ. Furthermore, the thermal analysis was performed using TG-DTA. The result show that the decomposition of polyoxometalate H4[αSiW12O40].nH2O intercalated hydrotalcite with ratio (1:1 was occured at 80oC to 400oC with a loss of OH in the layer at 150oC to 220oC, and then the decomposition of the compound polyoxometalate H4[αSiW12O40].nH2O at 350oC to 420oC. Keywords: Hydrotalcite, Layered Double Hydroxide, Polyoxometalate, Intercalation
XPS and EELS characterization of Mn{sub 2}SiO{sub 4}, MnSiO{sub 3} and MnAl{sub 2}O{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Grosvenor, A.P., E-mail: andrew.grosvenor@usask.ca [Department of Chemistry, University of Saskatchewan, Saskatoon, SK S7N 5C9 (Canada); Bellhouse, E.M., E-mail: erika.bellhouse@arcelormittal.com [Global R & D—Hamilton, ArcelorMittal Dofasco, 1330 Burlington St. E, Hamilton, ON L8N 3J5 (Canada); Korinek, A., E-mail: korinek@mcmaster.ca [Canadian Centre for Electron Microscopy, Brockhouse Institute for Materials Research, McMaster University, 1280 Main St. W., Hamilton, ON L8S 4M1 (Canada); Bugnet, M., E-mail: bugnetm@mcmaster.ca [Canadian Centre for Electron Microscopy, Brockhouse Institute for Materials Research, McMaster University, 1280 Main St. W., Hamilton, ON L8S 4M1 (Canada); McDermid, J.R., E-mail: mcdermid@mcmaster.ca [Steel Research Centre, McMaster University, 1280 Main St. W., Hamilton, ON L8S 4M1 (Canada)

2016-08-30

Graphical abstract: XPS and EELS spectra were acquired from Mn2Al2O4, MnSiO3 and Mn2SiO4 standards and unique features identified that will allow unambiguous identification of these compounds when studying the selective oxidation of advanced steels. - Highlights: • Mn2Al2O4, MnSiO3 and Mn2SiO4 standards were synthesized and characterized using both XPS and EELS. • Unique features in both the XPS high resolution and EELS spectra were identified for all compounds. • The spectra can be used to identify these compounds when studying the selective oxidation of steels. - Abstract: X-ray Photoelectron Spectroscopy (XPS) and Electron Energy Loss Spectroscopy (EELS) are strong candidate techniques for characterizing steel surfaces and substrate-coating interfaces when investigating the selective oxidation and reactive wetting of advanced high strength steels (AHSS) during the continuous galvanizing process. However, unambiguous identification of ternary oxides such as Mn{sub 2}SiO{sub 4}, MnSiO{sub 3}, and MnAl{sub 2}O{sub 4} by XPS or EELS, which can play a significant role in substrate reactive wetting, is difficult due to the lack of fully characterized standards in the literature. To resolve this issue, samples of Mn{sub 2}SiO{sub 4}, MnSiO{sub 3} and MnAl{sub 2}O{sub 4} were synthesized and characterized by XPS and EELS. The unique features of the XPS and EELS spectra for the Mn{sub 2}SiO{sub 4}, MnSiO{sub 3} and MnAl{sub 2}O{sub 4} standards were successfully derived, thereby allowing investigators to fully differentiate and identify these oxides at the surface and subsurface of Mn, Si and Al alloyed AHSS using these techniques.
Tunable emission in Ln3+ (Ce3+/Dy3+, Ce3+/Tb3+) doped KNa3Al4Si4O16 phosphor synthesized by combustion method

Science.gov (United States)

Kolte, M. M.; Pawade, V. B.; Bhattacharya, A. B.; Dhoble, S. J.

2018-05-01

Ln3+ (Ln = Ce3+/Dy3+, Ce3+/Tb3+) doped KNa3Al4Si4O16 phosphor has been synthesized by Combustion method (CS) at 550° C successfully. Ln3+ (Ln = Ce3+, Dy3+, Tb3+) ions when doped in KNa3Al4Si4O16 host lattice, it shows blue and green emission band under the near Ultraviolet (NUV) excitation wavelength. The Photoluminescence excitation (PLE) and emission spectra are observed due to f-f and d-f transition of rare earth ions. Also, an effective energy transfer (ET) study from Ce3+ → Dy3+ and Ce3+ → Tb3+ ions has been studied and confirmed on the basis of Dexter-Foster theory. Further synthesized phosphor is well characterized by XRD, SEM, TEM and decay time measurement. However, the analysis of crystallite size, lattice strain has been studied by using theoretical as well as experimental techniques. Hence, the observed tunable emission in Ln3+ doped KNa3Al4Si4O16 phosphor may be applicable for solid state lighting technology.
Efecto del dopado con Si sobre la estructura de defectos en sistemas heteroepitaxiales GaN/AlN/Si(111

Directory of Open Access Journals (Sweden)

Sánchez, A. M.

2000-08-01

Full Text Available The Si doping effect on the defect structure in GaN epilayers grown by molecular beam epitaxy on Si(111 substrates using AlN buffer layers has been studied. Transmission electron microscopy and related techniques have been used to carry out the structural characterization. The Si doping affects both the subgrain size and misorientation in GaN epilayer mosaic structure. The Si doping also leads to an increase of the planar defect density, as well as a decrease of the threading dislocation density. The enlargement of the subgrain tilt and the planar defect density explain the reduction of the dislocation density reaching the GaN free surface.

En el presente artículo se lleva a cabo el análisis del efecto que el dopado con Si tiene sobre la estructura de defectos en epicapas de GaN crecidas por epitaxia de haces moleculares sobre sustratos de Si (111 utilizando capas amortiguadoras de AlN. La caracterización estructural se llevó a cabo mediante microscopía electrónica de transmisión convencional y de alta resolución. El dopado con Si afecta a la desorientación y tamaño de los subgranos que constituyen la estructura mosaico de la epicapa de GaN. El dopado con Si provoca un aumento en la densidad de defectos planares, así como una disminución en la densidad de dislocaciones de propagación. El incremento en el grado de desorientación de inclinación, así como en la densidad de defectos planares que se produce conforme aumenta el dopado con Si explican la disminución en la densidad de dislocaciones que alcanzan la superficie libre de GaN.

High Al-content AlxGa1-xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Hussein, A.SH.; Thahab, S.M.; Hassan, Z.; Chin, C.W.; Abu Hassan, H.; Ng, S.S.

2009-01-01

The microstructure and optical properties of Al x Ga 1-x N/GaN/AlN films on Si (1 1 1) substrate grown by plasma-assisted molecular beam epitaxy (MBE) have been studied and investigated. Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), high-resolution X-ray diffraction (HR-XRD), energy dispersive X-ray spectroscopy (EDS) line analysis and photoluminescence (PL) were used to investigate a reconstruction pattern, cross-section, mole fraction and crystalline quality of the heterostructure. By applying the Vegard's law, a high Al-mole fraction of Al x Ga 1-x N sample with value of 0.43 has been obtained and compared with EDS line analysis measurement value. PL spectrum has exhibited a sharp and intense band edge emission of GaN with the absence of yellow emission band, indicating good crystal quality of the Al x Ga 1-x N has been successfully grown on Si substrate.
Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p-n diodes and InGaN LEDs

Science.gov (United States)

Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

2017-12-01

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal-organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p-n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm-3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10-3-3.4 × 10-3 Ω·cm2, and the turn-on voltages of the diodes.
Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs

KAUST Repository

Mughal, Asad J.

2017-11-27

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal–organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p–n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm−3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10−3–3.4 × 10−3 Ωcenterdotcm2, and the turn-on voltages of the diodes.
Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs

KAUST Repository

Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

2017-01-01

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal–organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p–n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm−3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10−3–3.4 × 10−3 Ωcenterdotcm2, and the turn-on voltages of the diodes.
Structure, mechanical and tribological properties of self-toughening TiSiN/Ag multilayer coatings on Ti6Al4V prepared by arc ion plating

Energy Technology Data Exchange (ETDEWEB)

Dang, Chaoqun [School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Li, Jinlong, E-mail: lijinlong11@126.com [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Wang, Yue; Chen, Jianmin [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

2016-11-15

Graphical abstract: Hardness and elastic modulus of TiSiN coating (C1) and TiSiN/Ag multilayer coatings with different thickness of individual Ag layers of 33.87 nm (C2), 30.01 nm (C3), 26.67 nm (C4), 22.22 nm (C5) and 10.67 nm (C6), together with SEM micrographs of indention morphologies after Vickers indentation tests. Display Omitted - Highlights: • TiSiN/Ag multilayer coatings design for microstructure was shown by cross-sectional SEM micrographs. • The TiSiN/Ag multilayer coatings showed a significantly improved toughness compared with the TiSiN coating. • The individual Ag layers as a self-lubricating. • TiSiN/Ag multilayer coating (individual Ag layers of 22.22 nm) exhibits high hardness, H/E and H{sup 3}/E{sup *2} values and excellent wear resistance. - Abstract: The TiSiN/Ag multilayer coatings deposited on Ti6Al4V alloy substrate using the multi-arc ion plating system. All multilayer coatings had a same total thickness of about 2.5 μm, and the TiSiN layer had a fixed thickness and the Ag layer had different thicknesses. Evidence concluded from X-ray diffraction, scanning electron microcopies, X-ray photoelectron spectroscopy revealed that nanocrystallites and amorphous microstructure of nc-TiN and amorphous Si{sub 3}N{sub 4} for individual TiSiN layers, where amorphous Si{sub 3}N{sub 4} around nanocrystallites TiN boundaries, and ductile nanocrystallites silver clusters and metallic silver for individual Ag layers which can limit continuous growth of single (200) preferential orientation coarse columnar TiN crystal. In addition, the TiN grain size presented a decreasing trend with the decrease of the thickness of Ag layers. The TiSiN/Ag multilayer coatings showed a significantly improved toughness compared with the TiSiN coating. The individual Ag layers of nano-multilayer coatings, not only as a self-lubricating but also as a barrier which inhibited micro cracks propagation, the formation of threading defects throughout all coatings, cause
Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC

Energy Technology Data Exchange (ETDEWEB)

Carlsson, P; Rabia, K; Son, N T; Janzen, E [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Ohshima, T; Morishita, N; Itoh, H [Japan Atomic Energy Research Institute, Takasaki 370-1292 (Japan); Isoya, J [University of Tsukuba, Tsukuba 305-8550 (Japan)], E-mail: paca@ifm.liu.se

2008-03-15

Electron Paramagnetic Resonance (EPR) was used to study defects in n-type 3C-SiC films irradiated by 3-MeV electrons at room temperature with a dose of 2x10{sup 18} cm{sup -2}. After electron irradiation, two new EPR spectra with an effective spin S = 1, labeled L5 and L6, were observed. The L5 center has C{sub 3v} symmetry with g = 2.004 and a fine-structure parameter D = 436.5x10{sup -4} cm{sup -1}. The L5 spectrum was only detected under light illumination and it could not be detected after annealing at {approx}550{sup 0}C. The principal z-axis of the D tensor is parallel to the <111>-directions, indicating the location of spins along the Si-C bonds. Judging from the symmetry and the fact that the signal was detected under illumination in n-type material, the L5 center may be related to the divacancy in the neutral charge state. The L6 center has a C{sub 2v}-symmetry with an isotropic g-value of g = 2.003 and the fine structure parameters D = 547.7x10{sup -4} cm{sup -1} and E = 56.2x10{sup -4} cm{sup -1}. The L6 center disappeared after annealing at a rather low temperature ({approx}200 deg. C), which is substantially lower than the known annealing temperatures for vacancy-related defects in 3C-SiC. This highly mobile defect may be related to carbon interstitials.
Low Temperature Growth of In2O3and InN Nanocrystals on Si(111 via Chemical Vapour Deposition Based on the Sublimation of NH4Cl in In

Directory of Open Access Journals (Sweden)

Tsokkou Demetra

2009-01-01

Full Text Available Abstract Indium oxide (In2O3 nanocrystals (NCs have been obtained via atmospheric pressure, chemical vapour deposition (APCVD on Si(111 via the direct oxidation of In with Ar:10% O2at 1000 °C but also at temperatures as low as 500 °C by the sublimation of ammonium chloride (NH4Cl which is incorporated into the In under a gas flow of nitrogen (N2. Similarly InN NCs have also been obtained using sublimation of NH4Cl in a gas flow of NH3. During oxidation of In under a flow of O2the transfer of In into the gas stream is inhibited by the formation of In2O3around the In powder which breaks up only at high temperatures, i.e.T > 900 °C, thereby releasing In into the gas stream which can then react with O2leading to a high yield formation of isolated 500 nm In2O3octahedrons but also chains of these nanostructures. No such NCs were obtained by direct oxidation forT G < 900 °C. The incorporation of NH4Cl in the In leads to the sublimation of NH4Cl into NH3and HCl at around 338 °C which in turn produces an efficient dispersion and transfer of the whole In into the gas stream of N2where it reacts with HCl forming primarily InCl. The latter adsorbs onto the Si(111 where it reacts with H2O and O2leading to the formation of In2O3nanopyramids on Si(111. The rest of the InCl is carried downstream, where it solidifies at lower temperatures, and rapidly breaks down into metallic In upon exposure to H2O in the air. Upon carrying out the reaction of In with NH4Cl at 600 °C under NH3as opposed to N2, we obtain InN nanoparticles on Si(111 with an average diameter of 300 nm.
The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy

International Nuclear Information System (INIS)

Anyebe, E A; Zhuang, Q; Kesaria, M; Krier, A

2014-01-01

We report the catalyst free growth of wurtzite InN nanorods (NRs) and microislands on bare Si (111) by plasma-assisted molecular beam epitaxy at various temperatures. The morphological evolution from NRs to three dimensional (3D) islands as a function of growth temperature is investigated. A combination of tapered, non-tapered, and pyramidal InN NRs are observed at 490 °C, whereas the InN evolves to faceted microislands with an increase in growth temperature to 540 °C and further developed to indented and smooth hemispherical structures at extremely high temperatures (630 °C). The evolution from NRs to microislands with increase in growth temperature is attributed to the lowering of the surface free energy of the growing crystals with disproportionate growth velocities along different growth fronts. The preferential adsorption of In atoms on the (0001) c-plane and (10-10) m-plane promotes the growth of NRs at relatively low growth temperature and 3D microislands at higher temperatures. The growth rate imbalance along different planes facilitates the development of facets on 3D microislands. A strong correlation between the morphological and structural properties of the 3D films is established. XRD studies reveal that the NRs and the faceted microislands are crystalline, whereas the hemispherical microislands grown at extremely high growth temperature contain In adlayers. Finally, photoluminescent emissions were observed at ∼0.75 eV from the InN NRs. (paper)
Luminescence and Morphological Properties of GaN Layers Grown on SiC/Si(111) Substrates

Energy Technology Data Exchange (ETDEWEB)

Sanchez-Garcia, M.A.; Ristic, J.; Calleja, E. [ISOM and Dpto. Ing. Electronica, ETSI Telecomunicacion, Univ. Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Perez-Rodriguez, A.; Serre, C.; Romano-Rodriguez, A.; Morante, J.R. [EME - Electronic Materials and Engineering, Department of Electronics, Universidad de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Koegler, R.; Skorupa, W. [Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf e.V., 01314 Dresden (Germany); Trampert, A.; Ploog, K.H. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2002-08-16

This article describes the fabrication of SiC thin films on top of Si(111) substrates by means of a multiple C-ion implantation and the subsequent growth by plasma-assisted molecular beam epitaxy of GaN layers. The stoichiometry of the top SiC layer is controlled by reactive ion etching. Photoluminescence spectra reveal that all GaN layers are under biaxial tensile strain of thermal origin. The photoluminescence efficiency clearly depends on the stoichiometry of the initial SiC layer and on whether AlN buffer layers are used or not. GaN layers grown directly on bare non-stoichiometric SiC layers exhibit the best photoluminescence efficiency but also a high degree of mosaicity, as measured by X-ray diffraction techniques. The nucleation process involved in the initial stages of the growth leads to the formation of large dislocation-free grains with a high PL efficiency and with a higher tensile strain character. Despite the lack of a perfect monocrystalline SiC substrate lattice, high quality GaN microcrystals are obtained. (Abstract Copyright[2002], Wiley Periodicals, Inc.)
Pitting Corrosion of Ni3(Si,Ti+4Al Intermetallic Compound at Various Chloride Concentrations

Directory of Open Access Journals (Sweden)

Gadang Priyotomo

2014-04-01

Full Text Available The pitting corrosion of Ni3(Si,Ti with 4 at% Al consisting of two regions of a Ni3(Si,Ti single-phase of L12 structure and two phases of L12 and fcc Niss was investigated as function of chloride concentrations by using electrochemical method, scanning electron microscope and energy dispersive X-Ray spectroscopy in neutral sodium chloride solutions at 293 K. In addition, the pitting corrosion of Ni3(Si,Ti and type C276 alloy were also studied under the same experimental condition for comparison. The pitting potential obtained for the Ni3(Si,Ti with 4 at%Al decreased with increasing chloride concentration. The specific pitting potential and pitting potential of Ni3(Si,Ti with 4at%, Ni3(Si,Ti and C276 were the lowest, the moderate and the highest, respectively, which means that the pitting corrosion resistance of Ni3(Si,Ti was higher than Ni3(Si,Ti with 4at% Al, but lower than that of C276. A critical chloride concentration of Ni3(Si,Ti with 4at% Al was found to be lower than that of Ni3(Si,Ti. The Pitting corrosion of Ni3(Si,Ti with 4at% Al occurred in the two phase mixture (L12 + Niss.
Chalcogenidosilicates: Ba/sub 2/SiTe/sub 4/ and Ba/sub 2/SiSe/sub 4/

Energy Technology Data Exchange (ETDEWEB)

Brinkmann, C; Eisenmann, B; Schaefer, H [Technische Hochschule Darmstadt (Germany, F.R.). Fachbereich Anorganische Chemie und Kernchemie

1985-05-01

The new compounds Ba/sub 2/SiSe/sub 4/ and Ba/sub 2/SiTe/sub 4/ crystallize in the monoclinic system, space group: P2/sub 1//m (No. 11) with the lattice constants Ba/sub 2/SiSe/sub 4/: a = 918.4(5) pm, b = 703.3(3) pm, c = 687.2(3) pm, ..beta.. = 109.2(1)/sup 0/, Ba/sub 2/SiTe/sub 4/: a = 965.0(5) pm, b = 762.6(3) pm, c = 746.6(3) pm, ..beta.. = 108.9(1)/sup 0/. Both compounds are isotypic to the Sr/sub 2/GeS/sub 4/ structure. Ba/sub 2/SiTe/sub 4/ is the first o-telluridosilicate with discrete SiTe/sub 4//sup 4 -/ anions.
Optical investigation of strain in Si-doped GaN films

International Nuclear Information System (INIS)

Sanchez-Paramo, J.; Calleja, J. M.; Sanchez-Garcia, M. A.; Calleja, E.

2001-01-01

The effects of Si doping on the growth mode and residual strain of GaN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy are studied by Raman scattering and photoluminescence. As the Si concentration increases a progressive decrease of the high-energy E 2 mode frequency is observed, together with a redshift of the excitonic emission. Both effects indicate an enhancement of the biaxial tensile strain of thermal origin for increasing doping level, which is confirmed by x-ray diffraction measurements. Beyond Si concentrations of 5x10 18 cm -3 both the phonon frequency and the exciton emission energy increase again. This change indicates a partial strain relaxation due to a change in the growth mode. [copyright] 2001 American Institute of Physics
Reciprocating sliding behaviour of self-mated amorphous diamond-like carbon coatings on Si3N4 ceramics under tribological stress

International Nuclear Information System (INIS)

Vila, M.; Abreu, C.S.; Salgueiredo, E.; Almeida, F.A.; Fernandes, A.J.S.; Costa, F.M.; Gomes, J.R.; Silva, R.F.

2006-01-01

Amorphous diamond-like carbon films grown by magnetron sputtering have been deposited on silicon nitride based substrates for tribological purposes. A conductive Si 3 N 4 /30% vol.TiN composite was produced for bias substrate application. Friction and wear properties of carbon coated self-mated pairs were assessed using a reciprocal motion ball-on-flat setup in unlubricated conditions with applied normal loads of 3 N and 5 N. The worn surfaces were studied by Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) in order to identify the prevalent wear mechanism. Unbiased and biased substrates behaved differently, the former undergoing premature delamination while the latter endured the tribological test conditions (3 N, ∼ 43 m). Very low friction coefficient values of ∼ 0.015 were sustained assuring remarkable wear behaviour. Surface grooving and wear debris accumulation in the sliding track lead to a roughness increase from the nominal rms value of ∼ 12 nm to ∼ 97 nm, although no weight loss and surface profile modification was quantifiable
Color-tunable and luminescence properties of phosphors of Ce{sup 3+} and Tb{sup 3+} co-doped La{sub 5}Si{sub 3}O{sub 12}N for UV w-LEDs

Energy Technology Data Exchange (ETDEWEB)

Deng, Junru; Chen, Jian; Liu, Yangai, E-mail: liuyang@cugb.edu.cn

2016-02-15

A series of Ce{sup 3+}, Tb{sup 3+} and Ce{sup 3+}/Tb{sup 3+} co-doped in La{sub 5}Si{sub 3}O{sub 12}N phosphors were synthesized by conventional high temperature solid state reaction method. With the increase of Tb{sup 3+}, the green emission was realized in (La{sub 0.94−y}Ce{sub 0.06}Tb{sub y}){sub 5}Si{sub 3}O{sub 12}N phosphors on the basis of the efficient energy transfer from Ce{sup 3+} to Tb{sup 3+} with an efficiency (η{sub T}) over 58.72%. The room temperature PL decay curves of the Ce{sup 3+} ions in (La{sub 0.94−y}Ce{sub 0.06}Tb{sub y}){sub 5}Si{sub 3}O{sub 12}N phosphors monitored at 460 nm with an excitation at 365 nm indicated that the energy transfer process between Ce{sup 3+} and Tb{sup 3+} indeed took place. The CIE chromaticity diagrams for (La{sub 0.94−y}Ce{sub 0.06}Tb{sub y}){sub 5}Si{sub 3}O{sub 12}N phosphors were also observed, which shows the color tuned from blue to blue-greenish to green with the increase of Tb{sup 3+} concentration from 0.01 to 0.08. These results demonstrated that Tb{sup 3+} ion with low 4f–4f absorption efficiency in near UV region can play the role of an activator in narrow green-emitting phosphor through efficient energy feeding by allowing 4f–5d absorption of Ce{sup 3+} with high oscillator strength. All the results indicated that the Ce{sup 3+} and Tb{sup 3+} activated La{sub 5}Si{sub 3}O{sub 12}N phosphor may be good candidates for blue-green components in n-UV white LEDs. - Highlights: • A series of Ce{sup 3+}, Tb{sup 3+} and Ce{sup 3+}/Tb{sup 3+} co-doped in La{sub 5}Si{sub 3}O{sub 12}N phosphors were synthesized by high temperature solid state reaction method. • The green emission was realized in (La{sub 0.94−y}Ce{sub 0.06}Tb{sub y})Si{sub 3}O{sub 12}N phosphors on the basis of the highly efficient energy transfer. • The Ce{sup 3+} and Tb{sup 3+} activated La{sub 5}Si{sub 3}O{sub 12}N phosphor may be good candidates for blue-green components in n-UV white LEDs.
Nitridation effects of Si(1 1 1) substrate surface on InN nanorods grown by plasma-assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Feng, Shan [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Tan, Jin, E-mail: jintan_cug@163.com [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Engineering Research Center of Nano-Geomaterials of Ministry of Education, China University of Geosciences, Wuhan 430074 (China); Li, Bin; Song, Hao; Wu, Zhengbo; Chen, Xin [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China)

2015-02-05

Graphical abstract: The morphology evolution of InN nanorods in samples (g)–(i). The alignment of InN nanorods is improved and the deviation angle distribution narrows down with increase in nitriding time. It suggests that extending the nitriding time can enhance the vertical orientation of InN nanorods. - Highlights: • InN nanorods were grown on surface nitrided Si(1 1 1) substrate using PAMBE system. • Nitridation of substrate surface has a strong effect on morphology of InN nanorods. • InN nanorods cannot be formed with 1 min nitridation of Si(1 1 1) substrate. • Increasing nitriding time will increase optimum growth temperature of InN nanorods. • Increasing nitriding time can enhance vertical orientation of InN nanorods. - Abstract: The InN nanorods were grown on Si(1 1 1) substrate by plasma-assisted molecular beam epitaxy (PAMBE) system, with a substrate nitridation process. The effect of nitriding time of Si(1 1 1) substrate on morphology, orientation and growth temperature of InN nanorods was characterized via scanning electron microscopy (SEM) and X-ray diffraction (XRD). The deviation angle of InN nanorods was measured to evaluate the alignment of arrays. The results showed that InN nanorods could not be formed with 1 min nitridation of Si(1 1 1) substrate, but they could be obtained again when the nitriding time was increased to more than 10 min. In order to get aligned InN nanorods, the growth temperature needed to increase with longer nitriding time. The vertical orientation of InN nanorods could be enhanced with increase in nitriding time. The influence of the substrate nitridation on the photoluminescence (PL) spectra of InN nanorods has been investigated.
Cross sections and reaction rates for 23Na(p,n) 23Mg, 27Al(p,n) 27Si, 27Al(α,n) 30P, 29Si(α,n) 32S, and 30Si(α,n) 33S

International Nuclear Information System (INIS)

Flynn, D.S.; Sekharan, K.K.; Hiller, B.A.; Laumer, H.; Weil, J.L.; Gabbard, F.

1978-01-01

The total neutron production cross sections for the 23 Na(p,n) 23 Mg, 27 Al(p,n) 27 Si, 27 Al(α,n) 30 P, 29 Si(α,n) 32 S, and 30 Si(α,n) 33 S reactions have been measured for bombarding energies from threshold to 6.3 MeV. The neutron detector was a 60-cm diameter sphere of polyethylene with eight 10 BF 3 counters and was insensitive to the angle and energy of the emitted neutrons. Cross sections for inverse reactions have been obtained using the principle of detailed balance. The data have been used to determine parameters for statistical model calculations to facilitate extrapolation of cross sections to higher bombarding energies. These reactions are relevant to problems of nucleosynthesis and stellar evolution and to studies of radiation damage. Nucleosynthesis reaction rates, N/sub A/(sigmav), were determined for the reactions studied and are tabulated for temperatures ranging from 0.4 x 10 9 to 10.0 x 10 9 K
Concentration effect of Tm3+ on cathodoluminescence properties of SiO2: Tm3+ and SiO2:Ho3+, Tm3+ systems

CSIR Research Space (South Africa)

Dhlamini, MS

2012-05-01

Full Text Available .physb.2011.09.091 Concentration effect of Tm3+ on cathodoluminescence properties of SiO2: Tm 3+ and SiO2:Ho 3+, Tm3+ systems M.S. Dhlamini, G.H. Mhlongo, H.C. Swart, O.M. Ntwaeaborwa, K.T. Hillie ABSTRACT: Cathodoluminescence (CL) properties of Si...O2 powders activated with thulium (Tm3+) and holmium (Ho3+) ions prepared by a sol–gel process were investigated. Different molar concentrations of Tm3+ co-doped with Ho3+ were studied. The 460 nm peak was monitored and the influence of the beam...
Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

International Nuclear Information System (INIS)

Khamsuwan, J.; Intarasiri, S.; Kirkby, K.; Chu, P.K.; Singkarat, S.; Yu, L.D.

2012-01-01

This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 10 13 and 1 × 10 14 ions/cm 2 at elevated temperatures for annealing. X-ray diffraction, Raman scattering, infrared spectroscopy and transmission electron microscopy were used to characterize the formation of nanocrystalline SiC. Photoluminescence was measured from the samples. The results demonstrated that MeV-heavy-ion-beam annealing could indeed induce crystallization of SiC nanocrystals and enhance emission of photoluminescence with violet bands dominance due to the quantum confinement effect.
Effect of hydrogen ion beam treatment on Si nanocrystal/SiO_2 superlattice-based memory devices

International Nuclear Information System (INIS)

Fu, Sheng-Wen; Chen, Hui-Ju; Wu, Hsuan-Ta; Chuang, Bing-Ru; Shih, Chuan-Feng

2016-01-01

Graphical abstract: - Highlights: • Memory window and retention properties are improved employing HIBAS technique. • The O/Si ratio and radiative recombination are changed by HIBAS. • Memory properties are affected not only by Si NCs and O/Si ratio but also the RDCs. • The mechanism of hydrogen ion beam alters the memory properties is investigated. - Abstract: This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO_2 superlattice-based memory devices with an improved memory window and retention properties. The SiO_2 and SRO superlattices are deposited by reactive sputtering. Specifically, the hydrogen ion beam is used to irradiate the SRO layer immediately after its deposition in the vacuum chamber. The use of the hydrogen ion beam was determined to increase oxygen content and the density of the Si nanocrystals. The memory window increased from 16 to 25.6 V, and the leakage current decreased significantly by two orders, to under ±20 V, for the hydrogen ion beam-prepared devices. This study investigates the mechanism into how hydrogen ion beam treatment alters SRO films and influences memory properties.
In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth

Science.gov (United States)

Suzuki, Akira; Bungi, Yu; Araki, Tsutomu; Nanishi, Yasushi; Mori, Yasuaki; Yamamoto, Hiroaki; Harima, Hiroshi

2009-05-01

To improve crystal quality of InN, an in-situ cyclic rapid pulse annealing during growth was carried out using infrared-lamp-heated molecular beam epitaxy. A cycle of 4 min growth of InN at 400 °C and 3 s pulse annealing at a higher temperature was repeated 15 times on AlN on Si substrate. Annealing temperatures were 550, 590, 620, and 660 °C. The back of Si was directly heated by lamp irradiation through a quartz rod. A total InN film thickness was about 200 nm. With increasing annealing temperature up to 620 °C, crystal grain size by scanning electron microscope showed a tendency to increase, while widths of X-ray diffraction rocking curve of (0 0 0 2) reflection and E 2 (high) mode peak of Raman scattering spectra decreased. A peak of In (1 0 1) appeared in X-ray diffraction by annealing higher than 590 °C, and In droplets were found on the surface by annealing at 660 °C.

Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate

Science.gov (United States)

Zhang, Zhili; Song, Liang; Li, Weiyi; Fu, Kai; Yu, Guohao; Zhang, Xiaodong; Fan, Yaming; Deng, Xuguang; Li, Shuiming; Sun, Shichuang; Li, Xiajun; Yuan, Jie; Sun, Qian; Dong, Zhihua; Cai, Yong; Zhang, Baoshun

2017-08-01

In this paper, we systematically investigated the leakage mechanism of the ion-implantation isolated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrate. By means of combined DC tests at different temperatures and electric field dependence, we demonstrated the following original results: (1) It is proved that gate leakage is the main contribution to OFF-state leakage of ion-implantation isolated AlGaN/GaN MIS-HEMTs, and the gate leakage path is a series connection of the gate dielectric Si3N4 and Si3N4-GaN interface. (2) The dominant mechanisms of the leakage current through LPCVD-Si3N4 gate dielectric and Si3N4-GaN interface are identified to be Frenkel-Poole emission and two-dimensional variable range hopping (2D-VRH), respectively. (3) A certain temperature annealing could reduce the density of the interface state that produced by ion implantation, and consequently suppress the interface leakage transport, which results in a decrease in OFF-state leakage current of ion-implantation isolated AlGaN/GaN MIS-HEMTs.
Effect of BaSi2 template growth duration on the generation of defects and performance of p-BaSi2/n-Si heterojunction solar cells

Science.gov (United States)

Yachi, Suguru; Takabe, Ryota; Deng, Tianguo; Toko, Kaoru; Suemasu, Takashi

2018-04-01

We investigated the effect of BaSi2 template growth duration (t RDE = 0-20 min) on the defect generation and performance of p-BaSi2/n-Si heterojunction solar cells. The p-BaSi2 layer grown by molecular beam epitaxy (MBE) was 15 nm thick with a hole concentration of 2 × 1018 cm-3. The conversion efficiency η increased for films grown at long t RDE, owing to improvements of the open-circuit voltage (V OC) and fill factor (FF), reaching a maximum of η = 8.9% at t RDE = 7.5 min. However, η decreased at longer and shorter t RDE owing to lower V OC and FF. Using deep-level transient spectroscopy, we detected a hole trap level 190 meV above the valence band maximum for the sample grown without the template (t RDE = 0 min). An electron trap level 106 meV below the conduction band minimum was detected for a sample grown with t RDE = 20 min. The trap densities for both films were (1-2) × 1013 cm-3. The former originated from the diffusion of Ba into the n-Si region; the latter originated from defects in the template layer. The crystalline qualities of the template and MBE-grown layers were discussed. The root-mean-square surface roughness of the template reached a minimum of 0.51 nm at t RDE = 7.5 min. The a-axis orientation of p-BaSi2 thin films degraded as t RDE exceeded 10 min. In terms of p-BaSi2 crystalline quality and solar cell performance, the optimum t RDE was determined to be 7.5 min, corresponding to approximately 4 nm in thickness.
Substrate temperature effects on reactively sputtered Cr2O3/n-Si heterojunctions

International Nuclear Information System (INIS)

Ocak, Yusuf Selim; Genisel, Mustafa Fatih; Issa, Ali Ahmed; Tombak, Ahmet; Kilicoglu, Tahsin

2016-01-01

To see the effects of substrate temperature on Cr 2 O 3 /n-Si heterojunctions, Cr 2 O 3 thin films were formed on n-Si and glass substrates at 40, 150 and 250 °C by radio frequency (RF) reactive sputtering technique. High purity Cr was used as target and oxygen was used as reactive gas. Optical properties of Cr 2 O 3 /n-Si thin films were analyzed using UV-vis data. The band gaps of the films were compared. The electrical properties of Cr 2 O 3 /n-Si heterojunction were tested by their current voltage ( I-V ) measurements in dark. It was observed that the heterojunction which was fabricated by forming Cr 2 O 3 thin film at 250 °C gave better rectification. The characteristic electrical parameters such as barrier height, ideality factor and series resistance were calculated by using its I-V data. The influence of light intensity on photovoltaic effect behavior of the device was also calculated, finally the barrier height value of the structure obtained from capacitance-voltage ( C-V ) data were compared with the one calculated from I-V measurements. (paper)
Fabrication and tritium release property of Li2TiO3-Li4SiO4 biphasic ceramics

Science.gov (United States)

Yang, Mao; Ran, Guangming; Wang, Hailiang; Dang, Chen; Huang, Zhangyi; Chen, Xiaojun; Lu, Tiecheng; Xiao, Chengjian

2018-05-01

Li2TiO3-Li4SiO4 biphasic ceramic pebbles have been developed as an advanced tritium breeder due to the potential to combine the advantages of both Li2TiO3 and Li4SiO4. Wet method was developed for the pebble fabrication and Li2TiO3-Li4SiO4 biphasic ceramic pebbles were successfully prepared by wet method using the powders synthesized by hydrothermal method. The tritium release properties of the Li2TiO3-Li4SiO4 biphasic ceramic pebbles were evaluated. The biphasic pebbles exhibited good tritium release property at low temperatures and the tritium release temperature was around 470 °C. Because of the isotope exchange reaction between H2 and tritium, the addition of 0.1%H2 to purge gas He could significantly enhance the tritium gas release and the fraction of molecular form of tritium increased from 28% to 55%. The results indicate that the Li2TiO3-Li4SiO4 biphasic ceramic pebbles fabricated by wet method exhibit good tritium release property and hold promising potential as advanced breeder pebbles.
Effect of Passivation on Microwave Power Performances of AlGaN/GaN/Si HEMTs

Directory of Open Access Journals (Sweden)

H. MOSBAHI

2014-05-01

Full Text Available This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs grown on silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using SiO2/SiN dielectric layers grown by plasma enhanced chemical vapor deposition. The direct current measurement, pulsed characteristics and microwave small-signal characteristics were studied before and after passivation. An improvement of drain-source current density and the extrinsic transconductance was observed on the passivated HEMTs when compared with the unpassivated HEMTs. An enhancement of cut-off frequency (ft and maximum power gain (fmax was also observed for the devices with full SiO2/SiN passivation. A good correlation is found between pulsed and power measurements.
Estudo da viabilidade de obtenção de cerâmicas de SiC por infiltração espontânea de misturas eutéticas de Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN Study of the viability to produce SiC ceramics by Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN spontaneous infiltration

Directory of Open Access Journals (Sweden)

G. C. R. Garcia

2008-06-01

Full Text Available As cerâmicas de carbeto de silício, SiC, apresentam excelentes propriedades quando obtidas por infiltração de determinados líquidos. Na infiltração o tempo de contato entre o líquido e o SiC a temperaturas elevadas é muito curto, diminuindo a probabilidade de formação dos produtos gasosos que interferem negativamente na resistência da peça final, como ocorre na sinterização via fase líquida. O objetivo deste trabalho é mostrar uma correlação entre molhabilidade e capacidade de infiltração de alguns aditivos em compactos de SiC. Foram preparados compactos de SiC por prensagem isostática a frio e posterior pré-sinterização via fase sólida. Nesses compactos foram infiltradas misturas de Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN, nas composições eutéticas, 10 ºC acima da temperatura de fusão das respectivas misturas por 4, 8 e 12 min. Após infiltração, as amostras foram analisadas quanto à densidade aparente e real, fases cristalinas, microestrutura e grau de infiltração, sendo que as amostras infiltradas com Y2O3-AlN apresentaram melhores resultados.Silicon carbide ceramics, SiC, obtained by liquid infiltration have shown excellent properties. In infiltration process the contact time of the liquid with SiC at elevated temperature is short, decreasing the probability to form gaseous products that contribute negatively in the final product properties. This phenomenon occurs during SiC liquid phase sintering. The purpose of the present study was to investigate the correlation between wettability and infiltration tendency of some additives in SiC compacts. SiC compacts were prepared by cold isostatic pressing followed by solid phase pre-sintering. Into the compacts were introduced Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN liquids with eutectic compositions at a temperature 10 ºC higher than the melting point of each mixture for 4, 8 and 12 min. Before infiltration, the samples were analyzed by determining densities, crystalline phases
Positron annihilation in SiO 2-Si studied by a pulsed slow positron beam

Science.gov (United States)

Suzuki, R.; Ohdaira, T.; Uedono, A.; Kobayashi, Y.

2002-06-01

Positron and positronium (Ps) behavior in SiO 2-Si have been studied by means of positron annihilation lifetime spectroscopy (PALS) and age-momentum correlation (AMOC) spectroscopy with a pulsed slow positron beam. The PALS study of SiO 2-Si samples, which were prepared by a dry-oxygen thermal process, revealed that the positrons implanted in the Si substrate and diffused back to the interface do not contribute to the ortho-Ps long-lived component, and the lifetime spectrum of the interface has at least two components. From the AMOC study, the momentum distribution of the ortho-Ps pick-off annihilation in SiO 2, which shows broader momentum distribution than that of crystalline Si, was found to be almost the same as that of free positron annihilation in SiO 2. A varied interface model was proposed to interpret the results of the metal-oxide-semiconductor (MOS) experiments. The narrow momentum distribution found in the n-type MOS with a negative gate bias voltage could be attributed to Ps formation and rapid spin exchange in the SiO 2-Si interface. We have developed a two-dimensional positron lifetime technique, which measures annihilation time and pulse height of the scintillation gamma-ray detector for each event. Using this technique, the positronium behavior in a porous SiO 2 film, grown by a sputtering method, has been studied.
Optical investigation of strain in Si-doped GaN films

Energy Technology Data Exchange (ETDEWEB)

Sanchez-Paramo, J.; Calleja, J. M.; Sanchez-Garcia, M. A.; Calleja, E.

2001-06-25

The effects of Si doping on the growth mode and residual strain of GaN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy are studied by Raman scattering and photoluminescence. As the Si concentration increases a progressive decrease of the high-energy E{sub 2} mode frequency is observed, together with a redshift of the excitonic emission. Both effects indicate an enhancement of the biaxial tensile strain of thermal origin for increasing doping level, which is confirmed by x-ray diffraction measurements. Beyond Si concentrations of 5{times}10{sup 18}cm{sup {minus}3} both the phonon frequency and the exciton emission energy increase again. This change indicates a partial strain relaxation due to a change in the growth mode. {copyright} 2001 American Institute of Physics.
Characterization and properties Ti-Al-Si-N nanocomposite coatings prepared by middle frequency magnetron sputtering

Science.gov (United States)

Zou, C. W.; Zhang, J.; Xie, W.; Shao, L. X.; Guo, L. P.; Fu, D. J.

2011-10-01

TiN-containing amorphous Ti-Al-Si-N (nc-TiN/a-Si 3N 4 or a-AlN) nanocomposite coatings were deposited by using a modified closed field twin unbalanced magnetron sputtering system which is arc assisted and consists of two circles of targets, at a substrate temperature of 300 °C. XRD, XPS and High-resolution TEM experiments showed that the coatings contain TiN nanocrystals embedded in the amorphous Si 3N 4 or AlN matrix. The coatings exhibit good mechanical properties that are greatly influenced by the Si contents. The hardness of the Ti-Al-Si-N coatings deposited at Si targets currents of 5, 8, 10, and 12 A were 45, 47, 54 and 46 GPa, respectively. The high hardness of the deposited Ti-Al-Si-N coatings may be own to the plastic distortion and dislocation blocking by the nanocrystalline structure. On the other hand, the friction coefficient decreases monotonously with increasing Si contents. This result would be caused by tribo-chemical reactions, which often take place in many ceramics, e.g. Si 3N 4 reacts with H 2O to produce SiO 2 or Si(OH) 2 tribolay-layer.
Interface plasmon-phonons modes in ion-beam synthesized Mg2Si nanolayers

International Nuclear Information System (INIS)

Baleva, M.; Zlateva, G.

2009-01-01

Raman scattering of samples, representing n- and p-type Si matrix with unburied Mg 2 Si nanolayers, formed by ion-beam synthesis, are studied. Despite the features in the Raman spectra attributed to the polariton modes with frequencies between those of the TO and LO phonons, additional features outside this interval are detected. The frequencies of these features are very sensitive to the plasma frequency, being different in the n- and p-type Si matrix and to the annealing time. The latter implies the generation of interface plasmonphonons modes. The frequencies of the interface plasmon-phonon modes are calculated and compared with the experimental results. The order of the carrier concentration in Mg 2 Si, the data of which are not available in the literature, is evaluated. (authors)
Density-functional study of the structures and properties of holmium-doped silicon clusters HoSi n (n = 3-9) and their anions.

Science.gov (United States)

Hou, Liyuan; Yang, Jucai; Liu, Yuming

2017-04-01

The structures and properties of Ho-doped Si clusters, including their adiabatic electron affinities (AEAs), simulated photoelectron spectra (PESs), stabilities, magnetic moments, and charge-transfer characteristics, were systematically investigated using four density-functional methods. The results show that the double-hybrid functional (which includes an MP2 correlation component) can accurately predict the ground-state structure and properties of Ho-doped Si clusters. The ground-state structures of HoSi n (n = 3-9) are sextuplet electronic states. The structures of these Ho-doped Si clusters (aside from HoSi 7 ) are substitutional. The ground-state structures of HoSi n - are quintuplet electronic states. Their predicted AEAs are in excellent agreement with the experimental ones. The mean absolute error in the theoretical AEAs of HoSi n (n = 4-9) is only 0.04 eV. The simulated PESs for HoSi n - (n = 5-9) are in good agreement with the experimental PESs. Based on its simulated PES and theoretical AEA, we reassigned the experimental PES of HoSi 4 - and obtained an experimental AEA of 2.2 ± 0.1 eV. The dissociation energies of Ho from HoSi n and HoSi n - (n = 3-9) were evaluated to test the relative stabilities of the clusters. HOMO-LUMO gap analysis indicated that doping the Si clusters with the rare-earth metal atom significantly increases their photochemical reactivity. Natural population analysis showed that the magnetic moments of HoSi n (n = 3-9) and their anions derive mainly from the Ho atom. It was also found that the magnetic moments of Ho in the HoSi n clusters are larger than the magnetic moment of an isolated Ho atom.
Initial stages of the ion-beam assisted epitaxial GaN film growth on 6H-SiC(0001)

International Nuclear Information System (INIS)

Neumann, L.; Gerlach, J.W.; Rauschenbach, B.

2012-01-01

Ultra-thin gallium nitride (GaN) films were deposited using the ion-beam assisted molecular-beam epitaxy technique. The influence of the nitrogen ion to gallium atom flux ratio (I/A ratio) during the early stages of GaN nucleation and thin film growth directly, without a buffer layer on super-polished 6H-SiC(0001) substrates was studied. The deposition process was performed at a constant substrate temperature of 700 °C by evaporation of Ga and irradiation with hyperthermal nitrogen ions from a constricted glow-discharge ion source. The hyperthermal nitrogen ion flux was kept constant and the kinetic energy of the ions did not exceed 25 eV. The selection of different I/A ratios in the range from 0.8 to 3.2 was done by varying the Ga deposition rate between 5 × 10 13 and 2 × 10 14 at. cm −2 s −1 . The crystalline surface structure during the GaN growth was monitored in situ by reflection high-energy electron diffraction. The surface topography of the films as well as the morphology of separated GaN islands on the substrate surface was examined after film growth using a scanning tunneling microscope without interruption of ultra-high vacuum. The results show, that the I/A ratio has a major impact on the properties of the resulting ultra-thin GaN films. The growth mode, the surface roughness, the degree of GaN coverage of the substrate and the polytype mixture depend notably on the I/A ratio. - Highlights: ► Ultra-thin epitaxial GaN films prepared by hyperthermal ion-beam assisted deposition. ► Surface structure and topography studied during and after initial growth stages. ► Growth mode dependent on nitrogen ion to gallium atom flux ratio. ► Change from three-dimensional to two-dimensional growth for Ga-rich growth conditions.
$^{31}$Si Self-Diffusion in Si-Ge Alloys and Si-(B-)C-N Ceramics and Diffusion Studies for Al and Si Beam Developments

CERN Multimedia

Nylandsted larsen, A; Voss, T L; Strohm, A

2002-01-01

An invaluable method for studying diffusion in solids is the radiotracer technique. However, its applicability had been restricted to radiotracer atoms with half-lives $t_{1/2}$ of about 1~d or longer. Within the framework of IS372 a facility was developed in which short-lived radiotracer atoms ( 5min $\\scriptstyle{\\lesssim}$ $t_{1/2}\\scriptstyle{\\lesssim}$1 d ) can be used. For the implantation of the short-lived tracers the facility is flanged to the ISOLDE beamline, and all post-implantation steps required in the radiotracer technique are done in situ.\\\\ After successful application of this novel technique in diffusion studies of $^{11}$C ($t_{1/2}$ = 20.3 min), this experiment aims at performing self-diffusion studies of $^{31}$Si ($t_{1/2}$ = 2.6~h) in Si--Ge alloys and in amorphous Si--(B--)C--N ceramics.\\\\ Our motivation for measuring diffusion in Si--Ge alloys is their recent technological renaissance as well as the purpose to test the prediction that in these alloys the self-diffusion mechanism chang...
Unidirectional solidification of a Nbss/Nb5Si3 in-situ composite

International Nuclear Information System (INIS)

Guo, X.P.; Ding, X.; Zhang, J.; Fu, H.Z.; Guan, P.; Kusabiraki, K.

2005-01-01

The directionally solidified specimens of Nb-13.52 Si-22.60 Ti-6.88 Hf-2.54 Cr-2.24 Al alloy were prepared in an electron beam floating zone melting furnace at the withdrawing rate of 0.1, 0.3, 0.6, 1.0, 2.4 and 6.0 mm/min. All the primary Nb solid solution (Nb ss ) columns, Nb ss + (Nb) 3 Si/(Nb) 5 Si 3 eutectic colonies and divorced (Nb) 3 Si/(Nb) 5 Si 3 plates or chains align well along the longitudinal axis of the specimens. With increasing of the withdrawing rate, the microstructure is gradually refined, and the amount of Nb ss + (Nb) 3 Si/(Nb) 5 Si 3 eutectic colonies increases. Both the room temperature ultimate tensile strength σ b and fracture toughness K Q are improved for the directionally solidified specimens. The tensile fracture occurs in a cleavage way. (orig.)
Theoretical study of the elasticity, mechanical behavior, electronic structure, interatomic bonding, and dielectric function of an intergranular glassy film model in prismatic β-Si3N4

International Nuclear Information System (INIS)

Ching, W. Y.; Rulis, Paul; Aryal, Sitaram; Ouyang, Lizhi; Misra, Anil

2010-01-01

Microstructures such as intergranular glassy films (IGFs) are ubiquitous in many structural ceramics. They control many of the important physical properties of polycrystalline ceramics and can be influenced during processing to modify the performance of devices that contain them. In recent years, there has been intense research, both experimentally and computationally, on the structure and properties of IGFs. Unlike grain boundaries or dislocations with well-defined crystalline planes, the atomic scale structure of IGFs, their fundamental electronic interactions, and their bonding characteristics are far more complicated and not well known. In this paper, we present the results of theoretical simulations using ab initio methods on an IGF model in β-Si 3 N 4 with prismatic crystalline planes. The 907-atom model has a dimension of 14.533 A x 15.225 A x 47.420 A . The IGF layer is perpendicular to the z axis, 16.4 A wide, and contains 72 Si, 32 N, and 124 O atoms. Based on this model, the mechanical and elastic properties, the electronic structure, the interatomic bonding, the localization of defective states, the distribution of electrostatic potential, and the optical dielectric function are evaluated and compared with crystalline β-Si 3 N 4 . We have also performed a theoretical tensile experiment on this model by incrementally extending the structure in the direction perpendicular to the IGF plane until the model fully separated. It is shown that fracture occurs at a strain of 9.42% with a maximum stress of 13.9 GPa. The fractured segments show plastic behavior and the formation of surfacial films on the β-Si 3 N 4 . These results are very different from those of a previously studied basal plane model [J. Chen et al., Phys. Rev. Lett. 95, 256103 (2005)] and add insights to the structure and behavior of IGFs in polycrystalline ceramics. The implications of these results and the need for further investigations are discussed.
Crystal structure of the Hg4SiS6 and Hg4SiSe6 compounds

International Nuclear Information System (INIS)

Gulay, L.D.; Olekseyuk, I.D.; Parasyuk, O.V.

2002-01-01

The crystal structures of Hg 4 SiS 6 and Hg 4 SiSe 6 compounds were investigated using X-ray powder diffraction. These compounds crystallize in the monoclinic Cc space group with the lattice parameters a=1.23020(5), b=0.71031(4), c=1.22791(4) nm, β=109.721(3) deg. for Hg 4 SiS 6 and a=1.28110(4), b=0.74034(4), c=1.27471(1) nm, β=109.605(3) deg. for Hg 4 SiSe 6 . Atomic parameters were refined in the isotropic approximation (R I =0.0571 and R I =0.0555 for the Hg 4 SiS 6 and Hg 4 SiSe 6 , respectively)
Ab initio calculation of the electronic structure and spectroscopic properties of spinel γ-Sn3N4

International Nuclear Information System (INIS)

Ching, W. Y.; Rulis, Paul

2006-01-01

The electronic structure and physical properties of γ-Sn 3 N 4 in the spinel structure are investigated by first-principles calculations. The calculated band structure, electronic bonding, and optical properties are compared with two well-studied spinel nitrides γ-Si 3 N 4 and γ-Ge 3 N 4 . γ-Sn 3 N 4 is a semiconductor with a direct band gap of 1.40 eV and an attractive small electron effective mass of 0.17. Its optical properties are different from that of γ-Si 3 N 4 and γ-Ge 3 N 4 because of the difference in the conduction band minimum. The Sn K, Sn L 3 , Sn M 5 , and N K edges of the x-ray-absorption near-edge structure spectra in γ-Sn 3 N 4 are calculated using a supercell approach and are found to be rich in structures. These spectra are discussed in the context of the electronic structure of the unoccupied conduction band in the presence of the electron core-hole interaction. These calculated spectra can be used for the characterization of this novel compound
Magnetic order of Y{sub 3}NiSi{sub 3}-type R{sub 3}NiSi{sub 3} (R=Gd–DY) compounds

Energy Technology Data Exchange (ETDEWEB)

Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Yapaskurt, V.O. [Department of Petrology, Faculty of Geology, Moscow State University, Leninskie Gory, Moscow 119992 (Russian Federation); Nirmala, R. [Indian Institute of Technology Madras, Chennai 600036 (India); Malik, S.K.; Quezado, S. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59082-970 (Brazil); Yao, Jinlei; Mozharivskyj, Y. [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4M1 (Canada); Nigam, A.K. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Isnard, O. [Université Grenoble Alpes, Inst NEEL, BP166, F-38042 Grenoble (France); CNRS, Institut NEEL, 25 rue des martyrs, F-38042 Grenoble (France)

2016-01-15

Magnetic measurements and neutron powder diffraction investigations on the Y{sub 3}NiSi{sub 3}-type R{sub 3}NiSi{sub 3} compounds (R=Gd, Tb, Dy) reveal their complex antiferromagnetic ordering. Magnetic measurements on Gd{sub 3}NiSi{sub 3}, Tb{sub 3}NiSi{sub 3} and Dy{sub 3}NiSi{sub 3} indicate antiferromagnetic-like transition at temperatures 260 K, 202 K and 140 K, respectively. Also, the Tb{sub 3}NiSi{sub 3} and Dy{sub 3}NiSi{sub 3} compounds show spin-reorientation transition at 132 K and 99 K, respectively. Below the spin-reorientation transition, the isothermal magnetization curves indicate the metamagnetic-like behavior of Tb{sub 3}NiSi{sub 3} and Dy{sub 3}NiSi{sub 3}. The magnetocaloric effect of Dy{sub 3}NiSi{sub 3} is calculated in terms of isothermal magnetic entropy change and it reaches a maximum value of −1.2 J/kg K and −1.1 J/kg K for a field change of 50 kOe near 146 K and 92 K, respectively. The neutron diffraction studies of Tb{sub 3}NiSi{sub 3} suggest the magnetic ordering of the Tb2 4j sublattice and no magnetic ordering of the Tb1 2a sublattice. Tb{sub 3}NiSi{sub 3} transforms from the high temperature paramagnetic state to the commensurate high-temperature a- and c-axis antiferromagnet of I′2/m magnetic space group below 250 K. Below 150 K, the high-temperature antiferromagnet transforms into the low-temperature a-, b- and c-axis antiferromagnet of I′i magnetic space group. At 1.5 K, the terbium magnetic moment in Tb2 sublattice and its a-, b- and c-axis components reach the values of M{sub Tb2}=8.2(1) μ{sub B}, M{sub aTb2}=5.9(1) μ{sub B}, M{sub bTb2}=4.3(2) μ{sub B} and M{sub cTb2}=3.7(2) μ{sub B}, respectively. - Highlights: • Gd{sub 3}NiSi{sub 3}, Tb{sub 3}NiSi{sub 3} and Dy{sub 3}NiSi{sub 3} have Neel points of 260. 202 and 140 K. • Tb{sub 3}NiSi{sub 3} and Dy{sub 3}NiSi{sub 3} show spin-reorientation transition at 132 and 99 K. • Tb{sub 3}NiSi{sub 3} exhibits the commensurate magnetic ordering of Tb2 4j sublattice
Sensitivity Enhancement in Si Nanophotonic Waveguides Used for Refractive Index Sensing

Directory of Open Access Journals (Sweden)

Yaocheng Shi

2016-03-01

Full Text Available A comparative study is given for the sensitivity of several typical Si nanophotonic waveguides, including SOI (silicon-on-insulator nanowires, nanoslot waveguides, suspended Si nanowires, and nanofibers. The cases for gas sensing (ncl ~ 1.0 and liquid sensing (ncl ~ 1.33 are considered. When using SOI nanowires (with a SiO2 buffer layer, the sensitivity for liquid sensing (S ~ 0.55 is higher than that for gas sensing (S ~ 0.35 due to lower asymmetry in the vertical direction. By using SOI nanoslot waveguides, suspended Si nanowires, and Si nanofibers, one could achieve a higher sensitivity compared to sensing with a free-space beam (S = 1.0. The sensitivity for gas sensing is higher than that for liquid sensing due to the higher index-contrast. The waveguide sensitivity of an optimized suspended Si nanowire for gas sensing is as high as 1.5, which is much higher than that of a SOI nanoslot waveguide. Furthermore, the optimal design has very large tolerance to the core width variation due to the fabrication error (∆w ~ ±50 nm. In contrast, a Si nanofiber could also give a very high sensitivity (e.g., ~1.43 while the fabrication tolerance is very small (i.e., ∆w < ±5 nm. The comparative study shows that suspended Si nanowire is a good choice to achieve ultra-high waveguide sensitivity.
Epitaxial Fe3Si/Ge/Fe3Si thin film multilayers grown on GaAs(001)

International Nuclear Information System (INIS)

Jenichen, B.; Herfort, J.; Jahn, U.; Trampert, A.; Riechert, H.

2014-01-01

We demonstrate Fe 3 Si/Ge/Fe 3 Si/GaAs(001) structures grown by molecular-beam epitaxy and characterized by transmission electron microscopy, electron backscattered diffraction, and X-ray diffraction. The bottom Fe 3 Si epitaxial film on GaAs is always single crystalline. The structural properties of the Ge film and the top Fe 3 Si layer depend on the substrate temperature during Ge deposition. Different orientation distributions of the grains in the Ge and the upper Fe 3 Si film were found. The low substrate temperature T s of 150 °C during Ge deposition ensures sharp interfaces, however, results in predominantly amorphous films. We find that the intermediate T s (225 °C) leads to a largely [111] oriented upper Fe 3 Si layer and polycrystal films. The high T s of 325 °C stabilizes the [001] oriented epitaxial layer structure, i.e., delivers smooth interfaces and single crystal films over as much as 80% of the surface area. - Highlights: • Fe 3 Si/Ge/Fe 3 Si/GaAs(001) structures are grown by MBE. • The bottom Fe 3 Si film is always single crystalline. • The properties of the Ge film depend on the substrate temperature during deposition. • Optimum growth conditions lead to almost perfect epitaxy of Ge on Fe 3 Si

Broad and focused ion beams Ga+ implantation damage in the fabrication of p+-n Si shallow junctions

International Nuclear Information System (INIS)

Steckl, A.J.; Lin, C.M.; Patrizio, D.; Rai, A.K.; Pronko, P.P.

1989-01-01

The use of focused and broad beam Ga + implantation for the fabrication of p + -n Si shallow junctions is explored. In particular, the issue of ion induced damage and its effect on diode electrical properties is explored. FIB-fabricated junctions exhibit a deeper junction with lower sheet resistance and higher leakage current than the BB-implanted diodes. TEM analysis exhibits similar amorphization and recrystallization behavior for both implantation techniques with the BB case generating a higher dislocation loop density after a 900 degree C anneal. 6 refs., 5 figs., 1 tab
Electrical properties of reactive-ion-sputtered Al{sub 2}O{sub 3} on 4H-SiC

Energy Technology Data Exchange (ETDEWEB)

Shukla, Madhup, E-mail: madhup.iit@gmail.com [Microelectronics and MEMS Laboratory, Electrical Engineering Department, Indian Institute of Technology Madras, Chennai 600036 (India); Dutta, Gourab [Microelectronics and MEMS Laboratory, Electrical Engineering Department, Indian Institute of Technology Madras, Chennai 600036 (India); Mannam, Ramanjaneyulu [Department of Physics and Nano Functional Materials Technology Centre, Indian Institute of Technology Madras, Chennai 600036 (India); DasGupta, Nandita [Microelectronics and MEMS Laboratory, Electrical Engineering Department, Indian Institute of Technology Madras, Chennai 600036 (India)

2016-05-31

Al{sub 2}O{sub 3} was deposited on n-type 4H-SiC by reactive-ion-sputtering (RIS) at room temperature using aluminum target and oxygen as a reactant gas. Post deposition oxygen annealing was carried out at a temperature of 1100 °C. Metal-oxide-semiconductor (MOS) test structures were fabricated on 4H-SiC using RIS-Al{sub 2}O{sub 3} as gate dielectric. The C-V characteristics reveal a significant reduction in flat band voltage for oxygen annealed RIS-Al{sub 2}O{sub 3} samples (V{sub fb} = 1.95 V) compared to as-deposited Al{sub 2}O{sub 3} samples (V{sub fb} > 10 V), suggesting a reduction in negative oxide charge after oxygen annealing. Oxygen annealed RIS-Al{sub 2}O{sub 3} samples also showed significant improvement in I-V characteristics compared to as-deposited RIS-Al{sub 2}O{sub 3} samples. A systematic analysis was carried out to investigate the leakage current mechanisms present in oxygen annealed RIS-Al{sub 2}O{sub 3} on 4H-SiC at higher gate electric field and at different operating temperature. For measurement temperature (T) < 303 K, Fowler–Nordheim (FN) tunneling was found to be the dominant leakage mechanism and for higher temperature (T ≥ 303 K), a combination of FN tunneling and Poole-Frenkel (PF) emission was confirmed. The improvement in I-V characteristics of oxygen annealed RIS-Al{sub 2}O{sub 3}/4H-SiC MOS devices is attributed to large effective barrier height (Φ{sub B} = 2.53 eV) at Al{sub 2}O{sub 3}/SiC interface, due to the formation of an interfacial SiO{sub 2} layer during oxygen annealing, as confirmed from X-ray Photoelectron Spectroscopy results. Further improvement in C-V characteristics for oxygen annealed RIS-Al{sub 2}O{sub 3}/4H-SiC MOS devices was observed after forming gas annealing at 400 °C. - Highlights: • O{sub 2} annealed RIS-Al{sub 2}O{sub 3} on 4H-SiC showed better performance than other reported result. • FN, FN + PF tunneling was found in O{sub 2} annealed RIS-Al{sub 2}O{sub 3} for different temp. ranges. • Al
Underling modification in ion beam induced Si wafers

International Nuclear Information System (INIS)

Hazra, S.; Chini, T.K.; Sanyal, M.K.; Grenzer, J.; Pietsch, U.

2005-01-01

Subsurface (amorphous-crystalline interface) structure of keV ion beam modified Si(001) wafers was studied for the first time using non-destructive technique and compared with that of the top one. Ion-beam modifications of the Si samples were done using state-of-art high-current ion implanter facility at Saha Institute of Nuclear Physics by changing energy, dose and angle of incidence of the Ar + ion beam. To bring out the underlying modification depth-resolved x-ray grazing incidence diffraction has been carried out using synchrotron radiation facility, while the structure of the top surface was studied through atomic force microscopy
Magnetic order and crystal structure study of YNi{sub 4}Si-type NdNi{sub 4}Si

Energy Technology Data Exchange (ETDEWEB)

Yao, Jinlei [Research Center for Solid State Physics and Materials, School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009 (China); Isnard, O. [Université Grenoble Alpes, Inst NEEL, BP166, Grenoble F-38042 (France); CNRS, Institut NEEL, 25 rue des martyrs, Grenoble F-38042 (France); Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Ivanova, T.I. [Physics Department, Moscow State University, Moscow 119992 (Russian Federation); Koshkid' ko, Yu.S. [International Laboratory of High Magnetic Fields and Low Temperatures, Wrocław (Poland); VSB-Technical University of Ostrava, Ostrava-Poruba 70833 (Czech Republic); Bogdanov, A.E.; Nikitin, S.A. [Physics Department, Moscow State University, Moscow 119992 (Russian Federation); Suski, W. [International Laboratory of High Magnetic Fields and Low Temperatures, Wrocław (Poland); Polish Academy of Sciences, Trzebiatowski Institute of Low Temperatures and Structure Research, P.O. Box 1410, 50-950 Wrocław 2 (Poland)

2015-02-15

Magnetic measurements and neutron powder diffraction investigation of the magnetic structure of the orthorhombic YNi{sub 4}Si-type (space group Cmmm) NdNi{sub 4}Si compound are presented. The magnetocaloric effect of NdNi{sub 4}Si is calculated in terms of the isothermal magnetic entropy change and it reaches the maximum value of –3.3 J/kg K for a field change of 50 kOe near T{sub C}=12 K. Below ∼12 K, NdNi{sub 4}Si exhibits a commensurate b-axis collinear ferromagnetic ordering with the Cmm′m magnetic space group in a zero magnetic field. At 1.5 K, the neodymium atoms have the magnetic moment of 2.37(5) μ{sub B}. The orthorhombic crystal structure and its thermal evolution are discussed in comparison with the CaCu{sub 5}-type compound. - Graphical abstract: The NdNi{sub 4}Si supplement the series of the orthorhombic derivative of the CaCu{sub 5}-type, namely the YNi{sub 4}Si-type, RNi{sub 4}Si compounds (R=Y, La, Ce, Sm, Gd–Ho). Below ∼12 K in a zero applied magnetic field, NdNi{sub 4}Si exhibits a commensurate b-axis collinear ferromagnetic ordering with the Cmm′m magnetic space group. Compared to the CaCu{sub 5}-type NdNi{sub 4}Si compound, the YNi{sub 4}Si-type counterpart has the relatively high ferromagnetic ordering temperature (9.2 K vs. 12 K), the small magnetocaloric effect (–7.3 J/kg K vs. –3.3 J/kg K for ∆H=50 kOe), and the large magnetic anisotropy at low temperatures. In contrast with CaCu{sub 5}-type NdNi{sub 4}Si, YNi{sub 4}Si-type NdNi{sub 4}Si shows distinct hysteresis loop at 2 K.We suggest that orthorhombic distortion may be used as a prospective route for optimization of permanent magnetic properties in the family of CaCu{sub 5}-type rare earth materials. - Highlights: • Below ∼12 K the YNi{sub 4}Si-type NdNi{sub 4}Si shows a ferromagnetic ordering. • MCE of NdNi{sub 4}Si reaches value of –3.3 J/kg K in 0–50 kOe near Curie point. • NdNi{sub 4}Si exhibits b-axis ferromagnetic order with the Cmm′m magnetic space
Ga induced superstructures as templates for lattice matched hetroepitaxial growth of GaN on Si(111) substrate

International Nuclear Information System (INIS)

Kumar, Praveen; Kuyyalil, Jithesh; Shivaprasad, S. M.

2010-01-01

High quality GaN is grown by plasma assisted molecular beam epitaxy on Ga induced superstructural phases of Si(111)7x7. Three stable surface phases induced by Ga adsorption, viz., (1x1), (6.3x6.3), and (√3x√3)R30 deg., are employed as templates to grow epitaxial (0001) GaN thin films. GaN grown on Si(√3x√3)R30 deg. -Ga is found to be highly crystalline with intense (0002) x-ray diffraction and photoluminescence peaks with low full width at half maximum, low surface roughness, and stoichiometric surface composition. The high quality of these GaN films formed at a low temperature of 400 deg. C is explained by the integral (x2) lattice matching between the unit cell of GaN and the (√3x√3) phase. The experiments demonstrate a plausible approach of adsorbate induced surface modifications as templates for III-V hetroepitaxy on Si surfaces.
Calibration of a turbidity meter for making estimates of total suspended solids concentrations and beam attenuation coefficients in field experiments

Science.gov (United States)

Usry, J. W.; Whitlock, C. H.

1981-01-01

Management of water resources such as a reservoir requires using analytical models which describe such parameters as the suspended sediment field. To select or develop an appropriate model requires making many measurements to describe the distribution of this parameter in the water column. One potential method for making those measurements expeditiously is to measure light transmission or turbidity and relate that parameter to total suspended solids concentrations. An instrument which may be used for this purpose was calibrated by generating curves of transmission measurements plotted against measured values of total suspended solids concentrations and beam attenuation coefficients. Results of these experiments indicate that field measurements made with this instrument using curves generated in this study should correlate with total suspended solids concentrations and beam attenuation coefficients in the water column within 20 percent.
Hot filament-dissociation of (CH3)3SiH and (CH3)4Si, probed by vacuum ultra violet laser time of flight mass spectroscopy.

Science.gov (United States)

Sharma, Ramesh C; Koshi, Mitsuo

2006-11-01

The decomposition of trimethylsilane and tetramethylsilane has been investigated for the first time, using hot wire (catalytic) at various temperatures. Trimethylsilane is catalytic-dissociated in these species SiH(2), CH(3)SiH, CH(3), CH(2)Si. Time of flight mass spectroscopy signal of these species are linearly increasing with increasing catalytic-temperature. Time of flight mass spectroscopy (TOFMS) signals of (CH(3))(3)SiH and photodissociated into (CH(3))(2)SiH are decreasing with increasing hot filament temperature. TOFMS signal of (CH(3))(4)Si is decreasing with increasing hot wire temperature, but (CH(3))(3)Si signal is almost constant with increasing the temperature. We calculated activation energies of dissociated species of the parental molecules for fundamental information of reaction kinetics for the first time. Catalytic-dissociation of trimethylsilane, and tetramethylsilane single source time of flight coupled single photon VUV (118 nm) photoionization collisionless radicals at temperature range of tungsten filament 800-2360 K. The study is focused to understand the fundamental information on reaction kinetics of these molecules at hot wire temperature, and processes of catalytic-chemical vapour deposition (Cat-CVD) technique which could be implemented in amorphous and crystalline SiC semiconductors thin films.
Effect of atmosphere on the fabrication of Si2N2O matrix composites

Directory of Open Access Journals (Sweden)

Wei Li

2018-03-01

Full Text Available Si2N2O matrix composites were fabricated by solid/gas reaction in air or N2 atmosphere. The effects of atmosphere on the phase and microstructure of the composites were investigated. The reaction mechanism of Si2N2O system was discussed by analysing the variation of the Gibbs free energy with temperature. The effect of N2 and air on sintering of Si2N2O matrix composites was discussed in relation to observed kinetics and thermodynamic calculations. The results showed that gradient structure of Si2N2O matrix composites were obtained in N2 atmosphere. While high N2 concentration was useful for the formation of the pure β-Si3N4 ceramics, low N2 concentration was proposed to form the pure Si2N2O ceramics. However, in the air atmosphere, structure of the Si3N4/SiO2 composites is homogeneous without the gradient structure appearing. Its composition is a little different as the O2 concentration changes.
Probing structure, thermochemistry, electron affinity, and magnetic moment of thulium-doped silicon clusters TmSi n (n = 3-10) and their anions with density functional theory.

Science.gov (United States)

Huang, Xintao; Yang, Jucai

2017-12-26

The most stable structures and electronic properties of TmSi n (n = 3-10) clusters and their anions have been probed by using the ABCluster global search technique combined with the PBE, TPSSh, and B3LYP density functional methods. The results revealed that the most stable structures of neutral TmSi n and their anions can be regarded as substituting a Si atom of the ground state structure of Si n + 1 with a Tm atom. The reliable AEAs, VDEs and simulated PES of TmSi n (n = 3-10) are presented. Calculations of HOMO-LUMO gap revealed that introducing Tm atom to Si cluster can improve photochemical reactivity of the cluster. The NPA analyses indicated that the 4f electron of Tm atom in TmSi n (n = 3-10) and their anions do not participate in bonding. The total magnetic moments of TmSi n are mainly provided by the 4f electrons of Tm atom. The dissociation energy of Tm atom from the most stable structure of TmSi n and their anions has been calculated to examine relative stability.
Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes

Science.gov (United States)

Aydin, H.; Bacaksiz, C.; Yagmurcukardes, N.; Karakaya, C.; Mermer, O.; Can, M.; Senger, R. T.; Sahin, H.; Selamet, Y.

2018-01-01

We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1‧:3″-terphenyl-5‧ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1‧:3‧1‧-terphenyl-5‧ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current-voltage (I-V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)-V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (Rs) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π-π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.
Onset temperature for Si nanostructure growth on Si substrate during high vacuum electron beam annealing.

Science.gov (United States)

Fang, F; Markwitz, A

2009-05-01

Silicon nanostructures, called Si nanowhiskers, are successfully synthesized on Si(100) substrate by high vacuum electron beam annealing. The onset temperature and duration needed for the Si nanowhiskers to grow was investigated. It was found that the onset and growth morphology of Si nanowhiskers strongly depend on the annealing temperature and duration applied in the annealing cycle. The onset temperature for nanowhisker growth was determined as 680 degrees C using an annealing duration of 90 min and temperature ramps of +5 degrees C s(-1) for heating and -100 degrees C s(-1) for cooling. Decreasing the annealing time at peak temperature to 5 min required an increase in peak temperature to 800 degrees C to initiate the nanowhisker growth. At 900 degrees C the duration for annealing at peak temperature can be set to 0 s to grow silicon nanowhiskers. A correlation was found between the variation in annealing temperature and duration and the nanowhisker height and density. Annealing at 900 degrees C for 0 s, only 2-3 nanowhiskers (average height 2.4 nm) grow on a surface area of 5 x 5 microm, whereas more than 500 nanowhiskers with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 degrees C for 0 s. Selected results are presented showing the possibility of controlling the density and height of Si nanowhisker growth for field emission applications by applying different annealing temperature and duration.
Additive manufacturing of Ti-Si-N ceramic coatings on titanium

International Nuclear Information System (INIS)

Zhang, Yanning; Sahasrabudhe, Himanshu; Bandyopadhyay, Amit

2015-01-01

Highlights: • 3D Printing or additive manufacturing of hard Ti-Si-N based ceramics coating on Ti metal substrate. • Understanding of phase transformation as a function of compositional variation. • Evaluation of influence of processing parameters and composition on wear resistance. - Abstract: In this study, Laser Engineered Net Shaping (LENS TM ) was employed towards Additive Manufacturing/3D Printing of Ti-Si-N coatings with three different Ti-Si ratios on commercially pure titanium (cp-Ti) substrate. Microstructural analysis, phase analysis using X-ray diffraction, wear resistance and hardness measurements were done on LENS™ processed 3D printed coatings. Coatings showed graded microstructures and in situ formed phases. Results showed that microstructural variations and phase changes influence coating's hardness and wear resistance directly. High hardness values were obtained from all samples’ top surface where the hardness of coatings can be ranked as 90% Ti-10% Si-N coating (2093.67 ± 144 HV 0.2 ) > 100% Ti-N coating (1846 ± 68.5 HV 0.2 ) > 75% Ti-25% Si-N coating (1375.3 ± 61.4 HV 0.2 ). However, wear resistance was more dependent on inherent Si content, and samples with higher Si content showed better wear resistance
Additive manufacturing of Ti-Si-N ceramic coatings on titanium

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yanning; Sahasrabudhe, Himanshu; Bandyopadhyay, Amit, E-mail: amitband@wsu.edu

2015-08-15

Highlights: • 3D Printing or additive manufacturing of hard Ti-Si-N based ceramics coating on Ti metal substrate. • Understanding of phase transformation as a function of compositional variation. • Evaluation of influence of processing parameters and composition on wear resistance. - Abstract: In this study, Laser Engineered Net Shaping (LENS{sup TM}) was employed towards Additive Manufacturing/3D Printing of Ti-Si-N coatings with three different Ti-Si ratios on commercially pure titanium (cp-Ti) substrate. Microstructural analysis, phase analysis using X-ray diffraction, wear resistance and hardness measurements were done on LENS™ processed 3D printed coatings. Coatings showed graded microstructures and in situ formed phases. Results showed that microstructural variations and phase changes influence coating's hardness and wear resistance directly. High hardness values were obtained from all samples’ top surface where the hardness of coatings can be ranked as 90% Ti-10% Si-N coating (2093.67 ± 144 HV{sub 0.2}) > 100% Ti-N coating (1846 ± 68.5 HV{sub 0.2}) > 75% Ti-25% Si-N coating (1375.3 ± 61.4 HV{sub 0.2}). However, wear resistance was more dependent on inherent Si content, and samples with higher Si content showed better wear resistance.
In vivo behaviors of Ca(OH){sub 2} activated nano SiO{sub 2} (n{sub Ca}/n{sub Si} = 3) cement in rabbit model

Energy Technology Data Exchange (ETDEWEB)

Lin, Qing, E-mail: lnqing@yahoo.com [School of Material Engineering, Jinling Institute of Technology, Nanjing 211169 (China); Zhang, Xiaojuan [School of Material Engineering, Jinling Institute of Technology, Nanjing 211169 (China); Lu, Chunhua; Lan, Xianghui [State Key Laboratory of Materials-Oriented Chemical Engineering, Nanjing University of Technology, Nanjing 210009 (China); Hou, Guihua [Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology, Yancheng 224051 (China); Xu, Zhongzi [State Key Laboratory of Materials-Oriented Chemical Engineering, Nanjing University of Technology, Nanjing 210009 (China)

2016-01-01

In vivo behaviors of Ca(OH){sub 2} activated nano SiO{sub 2} (n{sub Ca}/n{sub Si} = 3, TCS) cement were investigated in the rabbit femoral defects using the poly(methyl methacrylate) (PMMA) as control. The deposited apatite and CaCO{sub 3} layers round TCS paste surfaces were completely used to construct the new bone tissue. TCS paste could stimulate the formation of new bone tissue in marrow tissue. The osteostimulation was mainly attributed to the proliferation and differentiation effects of Ca and Si ions released from TCS paste on the osteoprogenitor cells. However, Calcium–Silicate–Hydrate (C–S–H) gel in TCS paste was harder to degradate than Ca(OH){sub 2}. TCS paste kept the original shape during implantation, and could not provide the pores or spaces for further formation of bone tissue. Osteolytic defects induced by wear particles from TCS paste surface could not be completely avoided, because of the interfacial strain and the extensive micromotion between TCS paste surface and new bone tissue. Overall, our results indicated that Ca(OH){sub 2} activated nano SiO{sub 2} cement was bioactivity and osteostimulation. The further improvements of Ca(OH){sub 2} activated nano SiO{sub 2} cement should be done by achieving a balance between biological properties and mechanical performances. - Highlights: • Ca(OH){sub 2} activated nano SiO{sub 2} (n{sub Ca}/n{sub Si} = 3, TCS) cement was in vivo bioactivity. • Deposited apatite and CaCO{sub 3} particles round TCS paste were utilized to restructure new bone tissue. • TCS paste was able to induce osteogenesis in marrow tissue. • Wear particle could induced osteolytic defect between TCS paste and bone tissue.
Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

International Nuclear Information System (INIS)

Tamura, Kazuyuki; Kuroki, Yuichiro; Yasui, Kanji; Suemitsu, Maki; Ito, Takashi; Endou, Tetsuro; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

2008-01-01

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH 3 ) and trimetylgallium (TMG) under low V/III source gas ratio (NH 3 /TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C 3 H 8 ). The AlN layer was deposited as a buffer layer using NH 3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH x radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer
EM study of crystallography and phase relationships in the Be/sub 3/N/sub 2/--BeSiN/sub 2/ system

Energy Technology Data Exchange (ETDEWEB)

Shaw, T.M.

1977-12-01

Transmission electron microscopy and diffraction have been used to examine structural aspects of phases along the BeSiN/sub 2/-Be/sub 3/N/sub 2/ tie line of the Be-Si-O-N system. Electron diffraction experiments are found to substantiate previous x-ray evidence for the derived structures of BeSiN/sub 2/, ..beta.. Be/sub 3/N/sub 2/, ..cap alpha.. Be/sub 3/N/sub 2/ and the presence of a number of long period superstructures at intermediate compositions. Real space observations using direct fringe and structure imaging techniques have been made and are in agreement with the 15R polytype structure derived from x-ray diffraction data. In addition, these observations indicate that beryllium atoms are preferentially sited in cubic stacked layers, allowing the polytype structures to be described as a coherent intergrowth of layers of the BeSiN/sub 2/ and ..beta.. Be/sub 3/N/sub 2/ structure. Further observations made on a non stoichiometric BeSiN/sub 2/ sample suggests that alternatively the polytypes may be described in terms of a regularly faulted BeSiN/sub 2/ structure. Each fault changes the coordination of tetrahedral sites from base sharing to edge sharing in the fault, allowing excess beryllium atoms to be accommodated in the close packed nitrogen lattice. For larger deviations from the BeSiN/sub 2/ stoichiometric composition a higher density of faults occur which interact to form ordered arrangements and the observed polytype structures. The present observations establish that polytypism in the Be-Si-N system is related to the general phenomenon of crystallographic shear as observed in other complex oxide and ceramic systems. It is suggested that similar faulting may account for the polytype structures in other Sialon systems.
Dissociative multiple photoionization of SiBr4 and GeBr4 in the VUV and X-ray regions: a comparative study of inner-shell processes involving Si(2p, 2s), Ge(3d, 3p, 3s), and Br(3d, 3p, 3s)

International Nuclear Information System (INIS)

Boo, Bong Hyun; Saito, Norio

2003-01-01

Dissociative multiple photoionization of MBr 4 (M=Si, Ge) in the Si(2p, 2s), Ge(3d, 3s, 3p), and Br(3d, 3p, 3s) inner-shell regions has been studied by using time-of-flight (TOF) mass spectrometry coupled to synchrotron radiation in the ranges of 50∼944 eV for SiBr 4 and 50∼467 eV for GeBr 4 . Total photoion and photoion-photoion coincidence (PIPICO) yields have been measured as functions of the photon energy. Here, giant shape resonances have been observed beyond the thresholds of the 3d shells owing to the Br(3d 10 )→Br(3d 9 -f) excitation, showing the similar patterns for both of the systems. The ranges and the intensities of the shape resonances are found to be tremendously broad and enhanced, respectively, by the tetrahedral arrangement of the bromine ligands. In addition to the giant resonances, we have observed discrete features corresponding to the Br(3d), Si(2p), and Si(2s) in SiBr 4 and to the Br(3d), Ge(3p), and Ge(3s) in GeBr 4 . The dissociation processes of multiply charged parent ions have also been evaluated from the variations of photoelectron-photoion coincidence (PEPICO) and PIPICO yields with the photon energy. Over the entire energies examined, most efficient PIPICO channels involve Br + -Br + , Br + -MBr + , and M + -Br + (M=Si, Ge), the formation of which indicates that the total destruction of the molecules is a dominant process in the dissociative photoionization of the molecules
Bonding Characteristics and Chemical Inertness of Zr–Si–N Coatings with a High Si Content in Glass Molding

Directory of Open Access Journals (Sweden)

Li-Chun Chang

2018-05-01

Full Text Available High-Si-content transition metal nitride coatings, which exhibited an X-ray amorphous phase, were proposed as protective coatings on glass molding dies. In a previous study, the Zr–Si–N coatings with Si contents of 24–30 at.% exhibited the hardness of Si3N4, which was higher than those of the middle-Si-content (19 at.% coatings. In this study, the bonding characteristics of the constituent elements of Zr–Si–N coatings were evaluated through X-ray photoelectron spectroscopy. Results indicated that the Zr 3d5/2 levels were 179.14–180.22 and 180.75–181.61 eV for the Zr–N bonds in ZrN and Zr3N4 compounds, respectively. Moreover, the percentage of Zr–N bond in the Zr3N4 compound increased with increasing Si content in the Zr–Si–N coatings. The Zr–N bond of Zr3N4 dominated when the Si content was >24 at.%. Therefore, high Si content can stabilize the Zr–N compound in the M3N4 bonding structure. Furthermore, the thermal stability and chemical inertness of Zr–Si–N coatings were evaluated by conducting thermal cycle annealing at 270 °C and 600 °C in a 15-ppm O2–N2 atmosphere. The results indicated that a Zr22Si29N49/Ti/WC assembly was suitable as a protective coating against SiO2–B2O3–BaO-based glass for 450 thermal cycles.
A transmission electron microscopy study of radiation damages to β-dicalcium (Ca{sub 2}SiO{sub 4}) and M3-tricalcium (Ca{sub 3}SiO{sub 5}) orthosilicates

Energy Technology Data Exchange (ETDEWEB)

Noirfontaine, Marie-Noëlle de; Dunstetter, Frédéric [Laboratoire des Solides Irradiés, Ecole Polytechnique, CNRS UMR 7642, CEA-DSM-IRAMIS, Université Paris Saclay, F-91128 Palaiseau Cedex (France); Courtial, Mireille [Laboratoire des Solides Irradiés, Ecole Polytechnique, CNRS UMR 7642, CEA-DSM-IRAMIS, Université Paris Saclay, F-91128 Palaiseau Cedex (France); Université d' Artois, 1230 Rue de l' Université, CS 20819, F-62408 Béthune (France); Signes-Frehel, Marcel [Laboratoire des Solides Irradiés, Ecole Polytechnique, CNRS UMR 7642, CEA-DSM-IRAMIS, Université Paris Saclay, F-91128 Palaiseau Cedex (France); Wang, Guillaume [Laboratoire Matériaux et Phénomènes Quantiques, CNRS UMR 7162, Université Paris Diderot, F-75205 Paris Cedex 13 (France); Gorse-Pomonti, Dominique, E-mail: dominique.gorse-pomonti@polytechnique.edu [Laboratoire des Solides Irradiés, Ecole Polytechnique, CNRS UMR 7642, CEA-DSM-IRAMIS, Université Paris Saclay, F-91128 Palaiseau Cedex (France)

2016-01-15

In this paper, we present results of a first study of electron radiation damages to β-dicalcium silicate (Ca{sub 2}SiO{sub 4}:C{sub 2}S) and M3-tricalcium silicate (Ca{sub 3}SiO{sub 5}:C{sub 3}S) in a Transmission Electron Microscope. Electron irradiation is used here as a means to bring to light a difference of reactivity under the electron beam between these two complex ceramic oxides, keeping in mind that C{sub 3}S reacts faster with water than C{sub 2}S and that this property remains unexplained, owing to the complex structural characteristics of these ceramics which have not yet been fully elucidated. The following results were obtained by coupling TEM imaging and EDS analysis: i) Rapid decomposition of both silicate particles into CaO nano-crystals separated by (presumably SiO{sub 2}-rich) amorphous areas at low flux for both silicates; ii) once reached a threshold electron flux, formation of an amorphous crater in both silicates, fully calcium-depleted in C{sub 3}S but never in C{sub 2}S; iii) significant post-mortem structural evolution of the craters that at least partially recrystallize in C{sub 2}S, to be compared to the quasi frozen damaged area in C{sub 3}S; iv) hole drilling at high flux but only in C{sub 3}S once reached a threshold flux, ϕ{sub th} ∼ 7.9 × 10{sup 21} e{sup −} cm{sup −2} s{sup −1}, of the same order of magnitude than previously estimated in a number of ceramic materials, whereas C{sub 2}S still amorphizes under the electron beam for a flux as high as 2.2 × 10{sup 22} e{sup −} cm{sup −2} s{sup −1}. The radiation damages and their post–mortem evolution differ largely between C{sub 2}S and C{sub 3}S. We attempted to relate the obtained results, and especially the evolution of the Ca content in the damaged areas under the electron beam to the available structural characteristics of these two orthosilicates. - Highlights: • TEM study of electron damages in β-dicalcium (C{sub 2}S), M3-tricalcium silicates
Assembly of Fe3O4 nanoparticles on SiO2 monodisperse spheres

Indian Academy of Sciences (India)

Assembly of Fe3O4 nanoparticles on SiO2 monodisperse spheres. K C BARICK and D BAHADUR*. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay,. Mumbai 400 076, India. Abstract. The assembly of superparamagnetic Fe3O4 nanoparticles on submicroscopic SiO2 ...

Effects of B4C Addition on the Laser Beam Welding Characteristics of Al/SiC MMCs Produced By P/M

Directory of Open Access Journals (Sweden)

Serdar KARAOĞLU

2011-01-01

Full Text Available Fusion weldability characteristics of metal matrix composites (MMC produced by powder metallurgy (P/M are usually insufficient due to unwanted micro-structural changes that occur during welding. This study aims to investigate the effects of B4C addition as reinforcement on the weld quality of Al/SiC MMCs. After the production of Al/SiC MMCs by P/M with or without the addition of B4C, laser beam welding (LBW characteristics of the materials were investigated by focusing on the integrity of the welds. Optical microscopy (OM, scanning electron microscopy (SEM, and energy dispersive X-ray analysis (EDX were utilized for the characterization of the welds. Results show that Al/SiC MMCs produced by P/M can not be easily welded by LBW, but weldability characteristics of the material can be improved by the addition of B4C.
Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

Energy Technology Data Exchange (ETDEWEB)

Tamura, Kazuyuki [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)], E-mail: kazuyuki@stn.nagaokaut.ac.jp; Kuroki, Yuichiro; Yasui, Kanji [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Suemitsu, Maki; Ito, Takashi [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Endou, Tetsuro [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Nakazawa, Hideki [Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8561 (Japan); Narita, Yuzuru [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Takata, Masasuke; Akahane, Tadashi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

2008-01-15

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH{sub 3}) and trimetylgallium (TMG) under low V/III source gas ratio (NH{sub 3}/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C{sub 3}H{sub 8}). The AlN layer was deposited as a buffer layer using NH{sub 3} and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH{sub x} radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.
Grain growth behavior of Li{sub 4}SiO{sub 4} pebbles fabricated by agar method for tritium breeder

Energy Technology Data Exchange (ETDEWEB)

Xiang, Maoqiao [School of Materials Science and Engineering, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083 (China); Zhang, Yingchun, E-mail: zycustb@126.com [School of Materials Science and Engineering, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083 (China); Zhang, Yun; Wang, Chaofu; Liu, Wei [School of Materials Science and Engineering, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083 (China); Yu, Yonghong [Department of Physics, Renmin University of China, Beijing, 100872 (China)

2016-11-15

Highlights: • Grain sizes of Li{sub 4}SiO{sub 4} were adjusted by different silicon sources. • Grain growth exponent of Li{sub 4}SiO{sub 4} was about 3. • Grain growth activation energy of Li{sub 4}SiO{sub 4} was about 125.54 kJ/mol. • Grain growth of Li{sub 4}SiO{sub 4} pebble was controlled by vapor transport. - Abstract: The Li{sub 4}SiO{sub 4} tritium breeding pebbles will be filled in the blanket and used for 2 years or more at high temperatures, which would increase the grain size and affect tritium release. Hence, grain sizes of the Li{sub 4}SiO{sub 4} pebbles fabricated by agar method were investigated, and two kinds of different silicon sources (crystal and amorphous SiO{sub 2}) with different particle sizes were used. The particle size of SiO{sub 2} could affect grain size and density of the Li{sub 4}SiO{sub 4} pebble. And the isothermal sintering was carried out to study the grain growth kinetics of Li{sub 4}SiO{sub 4}. The grain growth exponent (n) and the activation energy (Q) were calculated by the phenomenological kinetic equation. The calculated n values were 4.10, 3.98, 3.34 and 2.96, and corresponding Q values were 152.15, 147.99, 125.54 and 110.58 kJ/mol, respectively. At the higher sintering temperatures (950 and 1000 °C), the grain growth of Li{sub 4}SiO{sub 4} was controlled by vapor transport.
Band alignment of atomic layer deposited SiO2 and HfSiO4 with (\\bar{2}01) β-Ga2O3

Science.gov (United States)

Carey, Patrick H., IV; Ren, Fan; Hays, David C.; Gila, Brent P.; Pearton, Stephen J.; Jang, Soohwan; Kuramata, Akito

2017-07-01

The valence band offset at both SiO2/β-Ga2O3 and HfSiO4/β-Ga2O3 heterointerfaces was measured using X-ray photoelectron spectroscopy. Both dielectrics were deposited by atomic layer deposition (ALD) onto single-crystal β-Ga2O3. The bandgaps of the materials were determined by reflection electron energy loss spectroscopy as 4.6 eV for Ga2O3, 8.7 eV for Al2O3 and 7.0 eV for HfSiO4. The valence band offset was determined to be 1.23 ± 0.20 eV (straddling gap, type I alignment) for ALD SiO2 on β-Ga2O3 and 0.02 ± 0.003 eV (also type I alignment) for HfSiO4. The respective conduction band offsets were 2.87 ± 0.70 eV for ALD SiO2 and 2.38 ± 0.50 eV for HfSiO4, respectively.
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars.

Science.gov (United States)

Skibitzki, Oliver; Capellini, Giovanni; Yamamoto, Yuji; Zaumseil, Peter; Schubert, Markus Andreas; Schroeder, Thomas; Ballabio, Andrea; Bergamaschini, Roberto; Salvalaglio, Marco; Miglio, Leo; Montalenti, Francesco

2016-10-05

In this work, we demonstrate the growth of Ge crystals and suspended continuous layers on Si(001) substrates deeply patterned in high aspect-ratio pillars. The material deposition was carried out in a commercial reduced-pressure chemical vapor deposition reactor, thus extending the "vertical-heteroepitaxy" technique developed by using the peculiar low-energy plasma-enhanced chemical vapor deposition reactor, to widely available epitaxial tools. The growth process was thoroughly analyzed, from the formation of small initial seeds to the final coalescence into a continuous suspended layer, by means of scanning and transmission electron microscopy, X-ray diffraction, and μ-Raman spectroscopy. The preoxidation of the Si pillar sidewalls and the addition of hydrochloric gas in the reactants proved to be key to achieve highly selective Ge growth on the pillars top only, which, in turn, is needed to promote the formation of a continuous Ge layer. Thanks to continuum growth models, we were able to single out the different roles played by thermodynamics and kinetics in the deposition dynamics. We believe that our findings will open the way to the low-cost realization of tens of micrometers thick heteroepitaxial layer (e.g., Ge, SiC, and GaAs) on Si having high crystal quality.
On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

International Nuclear Information System (INIS)

Wang, Yongjin; Zhu, Guixia; Gao, Xumin; Yang, Yongchao; Yuan, Jialei; Shi, Zheng; Zhu, Hongbo; Cai, Wei

2016-01-01

We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.
nGEM fast neutron detectors for beam diagnostics

International Nuclear Information System (INIS)

Croci, G.; Claps, G.; Cavenago, M.; Dalla Palma, M.; Grosso, G.; Murtas, F.; Pasqualotto, R.; Perelli Cippo, E.; Pietropaolo, A.; Rebai, M.; Tardocchi, M.; Tollin, M.; Gorini, G.

2013-01-01

Fast neutron detectors with a sub-millimetric space resolution are required in order to qualify neutron beams in applications related to magnetically-controlled nuclear fusion plasmas and to spallation sources. A nGEM detector has been developed for the CNESM diagnostic system of the SPIDER NBI prototype for ITER and as beam monitor for fast neutrons lines at spallation sources. The nGEM is a triple GEM gaseous detector equipped with polypropylene and polyethylene layers used to convert fast neutrons into recoil protons through the elastic scattering process. This paper describes the results obtained by testing a nGEM detector at the ISIS spallation source on the VESUVIO beam line. Beam profiles (σ x =14.35 mm, σ y =15.75 mm), nGEM counting efficiency (around 10 -4 for 3 MeV n <15 MeV), detector stability (≈4.5%) and the effect of filtering the beam with different type of materials were successfully measured. The x beam profile was compared to the one measured by a single crystal diamond detector. Finally, the efficiency of the detector was simulated exploiting the GEANT4 tool
Polarized infrared reflectance studies for wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy

International Nuclear Information System (INIS)

Ooi, P.K.; Lee, S.C.; Ng, S.S.; Hassan, Z.; Abu Hassan, H.; Chen, W.L.

2011-01-01

Room temperature polarized infrared reflectance technique is employed to study the optical properties of wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy. The reflection spectra are compared to the calculated spectra generated based on the anisotropic dielectric function model. Good agreement between the measured and calculated spectra is obtained. From the fit of the experimental curve, the reststrahlen parameters at the center of Brillouin zone, the carrier concentration and mobility as well as the epilayers thicknesses are determined. The values of the carrier concentration and mobility are in good agreement with the results obtained from the Hall effects measurements.
Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks

KAUST Repository

Mitrovic, Ivona Z.

2011-07-01

TiN/LaLuO3 (LLO) gate stacks formed by molecular beam deposition have been investigated by X-ray photoelectron spectroscopy, medium energy ion scattering, spectroscopic ellipsometry, scanning transmission electron microscopy, electron energy loss spectroscopy and atomic force microscopy. The results indicate an amorphous structure for deposited LLO films. The band offset between the Fermi level of TiN and valence band of LLO is estimated to be 2.65 ± 0.05 eV. A weaker La-O-Lu bond and a prominent Ti2p sub-peak which relates to Ti bond to interstitial oxygen have been identified for an ultra-thin 1.7 nm TiN/3 nm LLO gate stack. The angle-dependent XPS analysis of Si2s spectra as well as shifts of La4d, La3d and Lu4d core levels suggests a silicate-type with Si-rich SiOx LLO/Si interface. Symmetrical valence and conduction band offsets for LLO to Si of 2.2 eV and the bandgap of 5.5 ± 0.1 eV have been derived from the measurements. The band alignment for ultra-thin TiN/LLO gate stack is affected by structural changes. Copyright © 2011 Published by Elsevier B.V. All rights reserved.
U(SMes*)n, (n = 3, 4) and Ln(SMes*)3 (Ln = La, Ce, Pr, Nd): lanthanide(III)/actinide(III) differentiation in agostic interactions and an unprecedented eta3 ligation mode of the arylthiolate ligand, from X-ray diffraction and DFT analysis.

Science.gov (United States)

Roger, Mathieu; Barros, Noémi; Arliguie, Thérèse; Thuéry, Pierre; Maron, Laurent; Ephritikhine, Michel

2006-07-12

Reaction of U(NEt(2))(4) with HS-2,4,6-(t)Bu(3)C(6)H(2) (HSMes) gave U(SMes)(3)(NEt(2))(py) (1), whereas similar treatment of U[N(SiMe(3))SiMe(2)CH(2)][N(SiMe(3))(2)](2) afforded U(SMes)[N(SiMe(3))(2)](3) (2) and U(SMes)(3)[N(SiMe(3))(2)]. The first neutral homoleptic uranium(IV) thiolate to have been crystallographically characterized, U(SMes)(4) (4), was isolated from the reaction of U(BH(4))(4) and KSMes. The first homoleptic thiolate complex of uranium(III), U(SMes)(3) (5), was synthesized by protonolysis of U[N(SiMe(3))(2)](3) with HSMes in cyclohexane. The crystal structure of 5 exhibits the novel eta(3) ligation mode for the arylthiolate ligand. Comparison of the crystal structure of 5 with those of the isomorphous lanthanide congeners Ln(SMes)(3) (Ln = La, Ce, Pr, and Nd) indicates that the U-S, U-C(ipso)(), and U-C(ortho)() bond lengths are shorter than the corresponding ones in the 4f-element analogues, when taking into account the variation in the ionic radii of the metals. The distance between the uranium and the carbon atoms involved in the U...H-C epsilon agostic interaction of each thiolate ligand is shorter, by approximately 0.05 A, than that expected from a purely ionic bonding model. The lanthanide(III)/actinide(III) differentiation was analyzed by density functional theory (DFT). The nature of the M-S bond is shown to be ionic strongly polarized at the sulfur for M = U and iono-covalent (i.e. strongly ionic with low orbital interaction), for M = Ln. The strength of the U...H-C epsilon agostic interaction is proposed to be controlled by the maximization of the interaction between U(+) and S(-) under steric constraints. The eta(3) ligation mode of the arylthiolate ligand is also obtained from DFT.
Photoelectron and Auger-electron spectra of Cl{sub 3}SiSi(CH{sub 3}){sub 3} obtained by using monochromatized synchrotron radiation

Energy Technology Data Exchange (ETDEWEB)

Nagaoka, Shin-ichi, E-mail: nagaoka@ehime-u.ac.jp [Department of Chemistry, Faculty of Science and Graduate School of Science and Engineering, Ehime University, Matsuyama 790-8577 (Japan); Endo, Hikaru; Nagai, Kanae [Department of Chemistry, Faculty of Science and Graduate School of Science and Engineering, Ehime University, Matsuyama 790-8577 (Japan); Takahashi, Osamu [Institute for Sustainable Sciences and Development, Hiroshima University, Higashi-Hiroshima 739-8511 (Japan); Tamenori, Yusuke [Synchrotron Radiation Research Institute/SPring-8, 1-1-1 Kouto, Sayo-cho, Sayo-gun 679-5198 (Japan); Suzuki, Isao H. [Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba 305-0801 (Japan); Advanced Institute of Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba 305-8568 (Japan)

2014-08-15

Highlights: • Various photo- and Auger-electron spectra of Cl{sub 3}SiSi(CH{sub 3}){sub 3} vapor were measured. • The measured spectra were interpreted with the aid of some calculations. • The spectra showed profiles close to those expected from SiCl{sub 4} and Si(CH{sub 3}){sub 4}. • These results were discussed in conjunction with site-specific fragmentation. - Abstract: A variety of photoelectron and Auger-electron spectra of 1,1,1-trimethyltrichlorodisilane vapor (Cl{sub 3}SiSi(CH{sub 3}){sub 3}) were measured by using monochromatized synchrotron radiation and a hemispherical electron energy analyzer. The measured spectra were interpreted with the aid of some calculations by means of the outer valence Green's function (OVGF) method or the density-functional-theory (DFT) method. Since Cl{sub 3}SiSi(CH{sub 3}){sub 3} consists of -SiCl{sub 3} and -Si(CH{sub 3}){sub 3} moieties, the experimental core-electron binding-energies were compared with those of tetrachlorosilane and tetramethylsilane (SiCl{sub 4} and Si(CH{sub 3}){sub 4}, respectively). This comparison showed that electronic properties of Cl{sub 3}SiSi(CH{sub 3}){sub 3} hold a close correlation with those of SiCl{sub 4} and Si(CH{sub 3}){sub 4}. Si:L{sub 23}VV, Cl:L{sub 23}VV and C:KVV Auger-electron spectra of Cl{sub 3}SiSi(CH{sub 3}){sub 3} also showed profiles close to those expected from the spectra of SiCl{sub 4} and Si(CH{sub 3}){sub 4}. The results obtained here were discussed in conjunction with electronic relaxation leading to site-specific fragmentation.
Modeling amorphous Si3B3N7: Structure and elastic properties

International Nuclear Information System (INIS)

Hannemann, A.; Schoen, J.C.; Jansen, M.; Putz, H.; Lengauer, T.

2004-01-01

We investigate the structure and elastic properties of the amorphous high-temperature ceramic a-Si 3 B 3 N 7 . Several different structural models are generated and their properties such as the radial and angular distribution functions, the degree of local order, the density, the bulk modulus and the phonon spectrum, are calculated and compared with the experiment. The best structural agreement between model and experimental observations is found for models exhibiting a certain degree of local ( 3 B 3 N 7 has not been synthesized by cooling from the melt but via the polymerization and subsequent pyrolysis of molecular precursors. Furthermore, we suggest that, due to the synthesis process, stable nanoscale cavities (diameter 3 )
Structure and wear behavior of AlCrSiN-based coatings

Energy Technology Data Exchange (ETDEWEB)

Chen, Yun [School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Chengdu Tool Research Institute Co., Ltd., Chengdu 610500 (China); Du, Hao [School of Manufacturing Science and Engineering, Sichuan University, Chengdu 610065 (China); Chen, Ming, E-mail: mchen@sjtu.edu.cn [School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Yang, Jun [Chengdu Tool Research Institute Co., Ltd., Chengdu 610500 (China); Xiong, Ji [School of Manufacturing Science and Engineering, Sichuan University, Chengdu 610065 (China); Zhao, Haibo [The Analysis and Testing Centre, Sichuan University, Chengdu 610065 (China)

2016-05-01

Graphical abstract: - Highlights: • AlCrSiN based coating showed amorphous structure. • AlCrSiN/Me{sub x}N coatings obtained better wear resistance. • Molybdenum and niobium increased the coating hardness and wear resistance. - Abstract: AlCrN, AlCrSiCN, AlCrSiN/MoN, and AlCrSiN/NbN coatings have been deposited on high-polished WC–Co cemented carbide substrate and tools by mid-frequency magnetron sputtering in Ar/N{sub 2} mixtures. Al{sub 0.6}Cr{sub 0.4}, Al{sub 0.6}Cr{sub 0.3}Si{sub 0.1}, and C/Mo/Nb targets were used during the deposition. The microstructure and mechanical properties of as-deposited coatings were investigated. Investigations of the wear behaviors of coated tools were also performed. The results showed that cubic structure was formed in the coatings. Broader CrAlN (1 1 1) and (2 0 0) peaks without SiN{sub x} peak were formed in the AlCrSiN/Me{sub x}N coatings, which showed a nanocomposited structure. Meanwhile, according to SEM micrographs, AlCrN exhibited a columnar structure, while, AlCrSiCN, AlCrSiN/MoN, and AlCrSiN/NbN coatings showed nanocrystalline morphology. The nano-multilayered coatings performed higher hardness, H/E, and H{sup 3}/E{sup 2} ratios compared with AlCrN coating. Through the Rockwell adhesion test, all the coatings exhibited adhesion strength quality HF1. After turning Inconel 718 under dry condition, the nano-multilyered coatings showed better wear resistance than AlCrN coating. Due to the molybdenum and niobium in the coating, AlCrSiN/MoN and AlCrSiN/NbN coatings showed the best wear resistance.
Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates

Science.gov (United States)

Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Varavin, V. S.; Dvoretskii, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Sidorov, G. Yu.

2017-12-01

Metal-insulator-semiconductor (MIS) structures based on n(p)-Hg1-xCdxTe (x = 0.22-0.40) with near-surface variable-gap layers were grown by the molecular-beam epitaxy (MBE) technique on the Si (0 1 3) substrates. Electrical properties of MIS structures were investigated experimentally at various temperatures (9-77 K) and directions of voltage sweep. The ;narrow swing; technique was used to determine the spectra of fast surface states with the exception of hysteresis effects. It is established that the density of fast surface states at the MCT/Al2O3 interface at a minimum does not exceed 3 × 1010 eV-1 × cm-2. For MIS structures based on n-MCT/Si(0 1 3), the differential resistance of the space-charge region in strong inversion mode in the temperature range 50-90 K is limited by the Shockley-Read-Hall generation in the space-charge region.
Enhancement of CdSiO3: Tb3+ green long-lasting phosphors by co-doping with Re3+ (Re3+=Gd3+, Y3+, La3+) ions

International Nuclear Information System (INIS)

Zeng, Wei; Wang, Yuhua; Han, Shaochun; Chen, Wenbo; Li, Gen

2014-01-01

CdSiO 3 : Tb 3+ , Re 3+ long-lasting phosphors were synthesized by the conventional high temperature solid-state method. A green-light phosphorescence phenomenon, which was associated with the 5 D 4 → 7 F J (J=6, 5, 4, 3) transitions of the Tb 3+ ion, was observed. Introduction of Re 3+ (Re 3+ =Gd 3+ , Y 3+ , La 3+ ) ions, which deepens the depth (E t ) or/and increases the density (n 0 ) of traps, greatly improved the afterglow properties of CdSiO 3 : Tb 3+ . Possible mechanism of CdSiO 3 : Tb 3+ , Re 3+ was discussed in this work. - Highlights: • CdSiO 3 : Tb 3+ , Re 3+ samples enrich the color of long-lasting afterglow phosphors in CdSiO 3 host. • Both the afterglow intensity and the lasting time are greatly enhanced for the co-doped samples, especially for Cd 0.96 SiO 3 : Tb 0.03 3+ , La 0.01 3+ . • Introduction of Re 3+ (Re 3+ =Gd 3+ , Y 3+ , La 3+ ) ions, which deepens the depth (E t ) or increase density(n 0 ) of traps, greatly improved the afterglow properties of CdSiO 3 : Tb 3+
Synthesis, luminescence, and energy-transfer properties of β-Na2Ca4(PO4)2(SiO4):A (A = Eu(2+), Dy(3+), Ce(3+)/Tb(3+)) phosphors.

Science.gov (United States)

Li, Kai; Shang, Mengmeng; Geng, Dongling; Lian, Hongzhou; Zhang, Yang; Fan, Jian; Lin, Jun

2014-07-07

A series of β-Na2Ca4(PO4)2(SiO4) (β-NCPS):A (A = Eu(2+), Dy(3+), Ce(3+)/Tb(3+)) phosphors were prepared via a high-temperature solid-state reaction route. The X-ray diffraction, Fourier transform infrared, photoluminescence (PL), cathodoluminescence (CL) properties, fluorescent lifetimes, and absolute quantum yield were exploited to characterize the samples. Under UV radiation, the β-NCPS:Eu(2+) phosphors present bright green emissions, and the β-NCPS:Ce(3+) phosphors show strong blue emissions, which are attributed to their 4f(6)5d(1) → 4f(7) and 5d-4f allowed transitions, respectively. The β-NCPS:Ce(3+), Tb(3+) phosphors display intense tunable color from blue to green and high absolute quantum yields (81% for β-NCPS:0.12Ce(3+) and 83% for β-NCPS:0.12Ce(3+), 0.08Tb(3+)) when excited at 365 nm. Simultaneously, the energy transfer from Ce(3+) to Tb(3+) ions is deduced from the spectral overlap between Ce(3+) emission and Tb(3+) excitation spectra and demonstrated by the change of emission spectra and decay lifetimes. Moreover, the energy-transfer mechanism from Ce(3+) to Tb(3+) ions is confirmed to be exchange interaction according to the discussion of expression from Dexter and Reisfeld. Under a low-voltage electron-beam excitation, the β-NCPS:A (A = Eu(2+), Dy(3+), Ce(3+)/Tb(3+)) phosphors exhibit their characteristic emissions, and the emission profiles of β-NCPS:Ce(3+),Tb(3+) phosphors are obviously different from those of the PL spectra; this difference might be ascribed to their different luminescence mechanisms. These results in PL and CL properties suggest that β-NCPS:A (A = Eu(2+), Dy(3+), Ce(3+)/Tb(3+)) phosphors are potential candidates for solid-state lighting and field-emission displays.
Synthesis of Bi4Si3O12 powders by a sol–gel method

International Nuclear Information System (INIS)

Xie Huidong; Jia Caixia; Jiang Yuanru; Wang Xiaochang

2012-01-01

Highlights: ► Bi 4 Si 3 O 12 were synthesized by a sol–gel method, using stoichiometric materials. ► The calcining process of the as-dried gel was studied by different analyses. ► Phase separation in the sol–gel process was found during the calcination. - Abstract: Micro-crystals of bismuth orthosilicate (Bi 4 Si 3 O 12 ) were synthesized by a sol–gel method, using stoichiometric Si(OC 2 H 5 ) 4 , Bi(NO 3 ) 3 ·5H 2 O as the precursors and acetic acid as the solvent. The calcining process of the as-dried gel was studied by total gravity/differential scanning calory (TG/DSC), X-ray diffraction (XRD) and infrared (IR) spectra. Experiments showed that single phase of Bi 4 Si 3 O 12 could be obtained by sol–gel method at a calcining temperature of 900 °C. Phase separation in the sol–gel process was found during the calcination.
The impact of SiC substrate treatment on the heteroepitaxial growth of GaN by plasma assisted MBE

Energy Technology Data Exchange (ETDEWEB)

Brown, A.S.; Kim, T.H.; Choi, S.; Morse, M.; Wu, P. [Department of Electrical and Computer Engineering, Duke University, Durham, NC 27709 (United States); Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM via Orabona 4 -70126, Bari (Italy)

2005-11-01

We report on the impact of the preparation of the Si-face 4H-SiC(0001){sub Si} substrate using a Ga flash-off process on the epitaxial growth of GaN by plasma-assisted molecular beam epitaxy. The nucleation, as well as the resultant structural and morphological properties of GaN grown directly on 4H-SiC(0001){sub Si} are strongly influenced by the chemical and morphological modifications of the SiC surface induced by the Ga flash-off process. Herein we describe the impact of the specific concentration of Ga incident on the surface (quantified in terms of monolayer (ML) coverage): of 0.5 ML, 1ML and 2ML. The residual oxygen at the SiC surface, unintentional SiC nitridation and the formation of cubic GaN grains during the initial nucleation stage, are all reduced when a 2 ML Ga flash is used. All of the above factors result in structural improvement of the GaN epitaxial layers. The correlation between the SiC surface modification, the initial nucleation stage, and the GaN epitaxial layer structural quality has been articulated using x-ray photoelectron spectroscopy, X-ray diffraction, atomic force microscopy and spectroscopic ellipsometry data. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Li4SrCa(SiO4)2:Ce3+, a highly efficient near-UV and blue emitting orthosilicate phosphor

International Nuclear Information System (INIS)

Zhang, Jilin; Zhang, Weilu; Qiu, Zhongxian; Zhou, Wenli; Yu, Liping; Li, Zhiqiang; Lian, Shixun

2015-01-01

High quantum efficiency is a vital parameter of phosphors for practical application. An efficient near-UV and blue emitting phosphor Li 4 SrCa(SiO 4 ) 2 :Ce 3+ was synthesized by a traditional solid-state reaction, and luminescent properties were studied in detail. The Ce 3+ -activated phosphor can emit both a near-UV light centred at 345 nm and a blue light peaking at 420 nm when Ce 3+ occupies the Sr and Ca site, respectively. The internal quantum efficiency (IQE) of Li 4 SrCa(SiO 4 ) 2 :0.03Ce 3+ is as high as 97% under the excitation at 288 nm, while the external quantum efficiency (EQE) is 66%. The IQE and EQE values of Li 4 SrCa(SiO 4 ) 2 :0.03Ce 3+ under the excitation at 360 nm are 82% and 31%, respectively. - Highlights: • Phosphor Li 4 SrCa(SiO 4 ) 2 :Ce 3+ emits a near-UV (345 nm) and a blue light (420 nm). • Emission band at 345 nm originates from Ce 3+ on Sr site. • Emission band at 420 nm belongs to Ce 3+ on Ca site. • Internal quantum efficiency is 97% for Li 4 SrCa(SiO 4 ) 2 :0.03Ce 3+ excited at 288 nm
Accompanying growth and room-temperature ferromagnetism of η-Mn3N2 thin films by molecular beam epitaxy

International Nuclear Information System (INIS)

Yu, Fengmei; Liu, Yajing; Yang, Mei; Wu, Shuxiang; Zhou, Wenqi; Li, Shuwei

2013-01-01

η-phase manganese nitride films have been grown on LaAlO 3 (100) and LaSrAlO 4 (001) substrates by using plasma-assisted molecular beam epitaxy. On the basis of reflective high energy electron diffraction, X-ray diffraction, and X-ray photoemission spectroscopy, it is confirmed that two types of η-Mn 3 N 2 with different lattice constants coexist in the films due to the lattice mismatches between the Mn 3 N 2 films and the substrates. Magnetic properties of the films were characterized by a superconducting quantum interference device magnetometer at room temperature. The Mn 3 N 2 films on LaAlO 3 substrate were found to have room-temperature ferromagnetism. Two potential interaction mechanisms are proposed regarding the origin of the observed ferromagnetism. - Highlights: ► The films of two types of η-Mn 3 N 2 have been grown by molecular beam epitaxy. ► Mn 3 N 2 A and Mn 3 N 2 B coexisted in the films on LaAlO 3 and LaSrAlO 4 . ► The room-temperature ferromagnetism of the Mn 3 N 2 films on LaAlO 3 was obtained

Suspended tungsten-based nanowires with enhanced mechanical properties grown by focused ion beam induced deposition

Science.gov (United States)

Córdoba, Rosa; Lorenzoni, Matteo; Pablo-Navarro, Javier; Magén, César; Pérez-Murano, Francesc; María De Teresa, José

2017-11-01

The implementation of three-dimensional (3D) nano-objects as building blocks for the next generation of electro-mechanical, memory and sensing nano-devices is at the forefront of technology. The direct writing of functional 3D nanostructures is made feasible by using a method based on focused ion beam induced deposition (FIBID). We use this technique to grow horizontally suspended tungsten nanowires and then study their nano-mechanical properties by three-point bending method with atomic force microscopy. These measurements reveal that these nanowires exhibit a yield strength up to 12 times higher than that of the bulk tungsten, and near the theoretical value of 0.1 times the Young’s modulus (E). We find a size dependence of E that is adequately described by a core-shell model, which has been confirmed by transmission electron microscopy and compositional analysis at the nanoscale. Additionally, we show that experimental resonance frequencies of suspended nanowires (in the MHz range) are in good agreement with theoretical values. These extraordinary mechanical properties are key to designing electro-mechanically robust nanodevices based on FIBID tungsten nanowires.
Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs

International Nuclear Information System (INIS)

Usman, Muhammad; Hallen, Anders; Ghandi, Reza; Domeij, Martin

2010-01-01

Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10 10 -10 11 cm -2 . The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.
AlGaN nanocolumns and AlGaN/GaN/AlGaN nanostructures grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Ristic, J.; Sanchez-Garcia, M.A.; Ulloa, J.M.; Calleja, E. [Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid (Spain); Sanchez-Paramo, J.; Calleja, J.M. [Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Jahn, U.; Trampert, A.; Ploog, K.H. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2002-12-01

This work reports on the characterization of hexagonal, single crystal AlGaN nanocolumns with diameters in the range of 30 to 100 nm grown by molecular beam epitaxy on Si(111) substrates. The change of the flux ratio between the Al and the total III-element controls the alloy composition. The Al composition trend versus the Al flux is consistent both with the E{sub 2} phonon energy values measured by inelastic light scattering and the luminescence emission peaks position. High quality low dimensional AlGaN/GaN/AlGaN heterostructures with five GaN quantum discs, 2 and 4 nm thick, embedded into the AlGaN columns, were designed in order to study the quantum confinement effects. (Abstract Copyright [2002], Wiley Periodicals, Inc.)
Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

Energy Technology Data Exchange (ETDEWEB)

Soto Rodriguez, Paul E. D., E-mail: p.soto@isom.upm.es; Aseev, Pavel; Gómez, Victor J.; Kumar, Praveen; Ul Hassan Alvi, Naveed; Calleja, Enrique [Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Mánuel, José M.; Jiménez, Juan J.; García, Rafael [Dep. Ciencia de los Materiales e IM y QI., F. Ciencias, Universidad de Cádiz, 11510-Puerto Real, Cádiz (Spain); Morales, Francisco M. [Dep. Ciencia de los Materiales e IM y QI., F. Ciencias, Universidad de Cádiz, 11510-Puerto Real, Cádiz (Spain); IMEYMAT: Institute of Research on Electron Microscopy and Materials of the University of Cádiz, Cádiz (Spain); Senichev, Alexander [Max Planck Institute of Microstructure Physics, Weinberg 2, Halle 06120 (Germany); Lienau, Christoph [Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26129 Oldenburg (Germany); Nötzel, Richard, E-mail: noetzel500@gmail.com [L-NESS and Dipartimento di Scienza dei Materiali, Universitá di Milano-Bicocca, Via Cozzi 53, 20125 Milano (Italy)

2015-01-12

The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In{sub 0.73}Ga{sub 0.27}N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10–40 nm, heights of 2–4 nm, and a relatively low density of ∼7 × 10{sup 9} cm{sup −2}. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.
Dielectronic and radiative recombination of Si- to N-like tungsten ions

International Nuclear Information System (INIS)

Biedermann, C; Radtke, R; Seidel, R; Behar, E

2009-01-01

We have performed x-ray spectroscopic measurements of the dielectronic recombination resonance strength for the LMn (n = 3, ..., 10) series of Si-like W 60+ to N-like W 67+ tungsten ions. Highly charged tungsten ions were produced, stored and excited with the Berlin electron beam ion trap and the emitted radiation was analyzed with a solid state detector. Information on the charge state abundance in the trap was extracted from a fit of the theoretical radiative recombination intensity to measured values. The fit procedure was only feasible when the fine structure, angular momentum of the recombination channels is taken into account. Our measurement of x-rays from n = 2-3, 2-4 and higher DR resonance transitions was compared to relativistic calculations of the DR cross sections and rate coefficients calculated with the Hebrew University Lawrence Livermore Atomic Code (HULLAC). The previous theoretical predictions for Ne-like tungsten (W 64+ ) were extended with calculations for ions in adjacent charge states and compare well with the observed DR resonance structure.
Blue to bluish-green tunable phosphor Sr2LiSiO4F:Ce3+,Tb3+ and efficient energy transfer for near-ultraviolet light-emitting diodes

International Nuclear Information System (INIS)

Xie, Mubiao; Zeng, Lihua; Ye, TingLi; Yang, Xi; Zhu, Xianmei; Peng, Siyun; Lei, Lei

2014-01-01

Ce 3+ and Tb 3+ activated Sr 2 LiSiO 4 F phosphors were prepared by a solid state reaction technique at high temperature, and their ultraviolet (UV)-visible spectroscopic properties were investigated. Under ultraviolet light excitation, Ce 3+ -doped Sr 2 LiSiO 4 F phosphors emit blue light (420 nm), while Tb 3+ -doped phosphors show yellowish green emission. Efficient energy transfer from Ce 3+ to Tb 3+ ions in co-doped samples was confirmed in terms of corresponding excitation and emission spectra. The energy transfer mechanism between Ce 3+ and Tb 3+ was discussed and demonstrated to be dipole–dipole interaction in Sr 2 LiSiO 4 F:Ce 3+ ,Tb 3+ phosphors. Due to energy transfer from Ce 3+ to Tb 3+ , Ce 3+ and Tb 3+ co-doped Sr 2 LiSiO 4 F phosphors show intense absorption in near-UV region, and present tunable emission from blue to bluish green under 360 nm light excitation. The results indicate that these phosphors can be considered as candidates for white LEDs pumped by n-UV chips. (paper)
Site-specific forest-assembly of single-wall carbon nanotubes on electron-beam patterned SiOx/Si substrates

International Nuclear Information System (INIS)

Wei Haoyan; Kim, Sang Nyon; Kim, Sejong; Huey, Bryan D.; Papadimitrakopoulos, Fotios; Marcus, Harris L.

2008-01-01

Based on electron-beam direct writing on the SiO x /Si substrates, favorable absorption sites for ferric cations (Fe 3+ ions) were created on the surface oxide layer. This allowed Fe 3+ -assisted self-assembled arrays of single-wall carbon nanotube (SWNT) probes to be produced. Auger investigation indicated that the incident energetic electrons depleted oxygen, creating more dangling bonds around Si atoms at the surface of the SiO x layer. This resulted in a distinct difference in the friction forces from unexposed regions as measured by lateral force microscopy (LFM). Atomic force microscopy (AFM) affirmed that the irradiated domains absorbed considerably more Fe 3+ ions upon immersion into pH 2.2 aqueous FeCl 3 solution. This rendered a greater yield of FeO(OH)/FeOCl precipitates, primarily FeO(OH), upon subsequent washing with lightly basic dimethylformamide (DMF) solution. Such selective metal-functionalization established the basis for the subsequent patterned forest-assembly of SWNTs as demonstrated by resonance Raman spectroscopy
Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range

Energy Technology Data Exchange (ETDEWEB)

Aseev, Pavel, E-mail: pavel.aseev@upm.es; Rodriguez, Paul E. D. Soto; Gómez, Víctor J.; Alvi, Naveed ul Hassan; Calleja, Enrique [Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Mánuel, José M.; Jiménez, Juan J.; García, Rafael [Departamente Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica, Facultad de Ciencias, Universidad de Cádiz, Puerto Real, 11510 Cádiz (Spain); Morales, Francisco M. [Departamente Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica, Facultad de Ciencias, Universidad de Cádiz, Puerto Real, 11510 Cádiz (Spain); IMEYMAT: Institute of Research on Electron Microscopy and Materials of the University of Cádiz, 11510 Cádiz (Spain); Senichev, Alexander [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany); Lienau, Christoph [Institute of Physics and Center of Interface Science, Carl von Ossietzky Universität Oldenburg, Ammerländer Heerstr. 114-118, 26129 Oldenburg (Germany); and others

2015-02-16

The authors report compact and chemically homogeneous In-rich InGaN layers directly grown on Si (111) by plasma-assisted molecular beam epitaxy. High structural and optical quality is evidenced by transmission electron microscopy, near-field scanning optical microscopy, and X-ray diffraction. Photoluminescence emission in the near-infrared is observed up to room temperature covering the important 1.3 and 1.55 μm telecom wavelength bands. The n-InGaN/p-Si interface is ohmic due to the absence of any insulating buffer layers. This qualitatively extends the application fields of III-nitrides and allows their integration with established Si technology.
Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range

International Nuclear Information System (INIS)

Aseev, Pavel; Rodriguez, Paul E. D. Soto; Gómez, Víctor J.; Alvi, Naveed ul Hassan; Calleja, Enrique; Mánuel, José M.; Jiménez, Juan J.; García, Rafael; Morales, Francisco M.; Senichev, Alexander; Lienau, Christoph

2015-01-01

The authors report compact and chemically homogeneous In-rich InGaN layers directly grown on Si (111) by plasma-assisted molecular beam epitaxy. High structural and optical quality is evidenced by transmission electron microscopy, near-field scanning optical microscopy, and X-ray diffraction. Photoluminescence emission in the near-infrared is observed up to room temperature covering the important 1.3 and 1.55 μm telecom wavelength bands. The n-InGaN/p-Si interface is ohmic due to the absence of any insulating buffer layers. This qualitatively extends the application fields of III-nitrides and allows their integration with established Si technology
Preparation of SiC thin films by ion beam technology and PECVD

International Nuclear Information System (INIS)

Chen Changqing; Ren Congxin; Yang Lixin; Yan Jinlong; Zheng Zhihong; Zhou Zuyao; Chen Ping; Liu Xianghuai; Chen Xueliang

1998-01-01

The formation of β-SiC buried layers in p-type Si by ion beam methods is reported and a comparison of the results obtained under different experimental conditions is made. The preparation of amorphous SiC thin films by IBED is presented and the enhanced deposition of Xe + is found superior to that of Ar + . The work of synthesizing hydrogenated amorphous SiC films by RIBS and RIBAD is described with a discussion on the dependence of some physical parameters on the partial pressure ratio pCH 4 /pAr. Finally given is a brief introduction to a high quality α-SiC:H film which is prepared by PECVD and can exhibit green luminescence at room temperature
U(SMes*)n, (n=3, 4) and Ln(SMes*)3 (Ln = La, Ce, Pr, Nd): Lanthanide(III)/actinide(III) differentiation in agostic interactions and an unprecedented eta(3) Ligation mode of the aryl-thiolate ligand, from X-ray diffraction and DFT analysis

International Nuclear Information System (INIS)

Roger, Mathieu; Barros, Noemi; Arliguie, Therese; Thuery, Pierre; Maron, Laurent; Ephritikhine, Michel

2006-01-01

Reaction of U(NEt 2 ) 4 with HS-2,4,6- t Bu 3 C 6 H 2 (HSMes*) gave U(SMes*) 3 (NEt 2 )(py) (1), whereas similar treatment of U[N(SiMe 3 )SiMe 2 CH 2 ][N(SiMe 3 ) 2 ] 2 afforded U(SMes*)[N(SiMe 3 ) 2 ] 3 (2) and U(SMes*) 3 [N(SiMe 3 ) 2 ]. The first neutral homoleptic uranium(IV) thiolate to have been crystallographically characterized, U(SMes*) 4 (4), was isolated from the reaction of U(BH 4 ) 4 and KSMes*. The first homoleptic thiolate complex of uranium(III), U(SMes*) 3 (5), was synthesized by proton-lysis of U[N(SiMe 3 ) 2 ] 3 with HSMes* in cyclohexane. The crystal structure of 5 exhibits the novel η 3 ligation mode for the aryl-thiolate ligand. Comparison of the crystal structure of 5 with those of the isomorphous lanthanide congeners Ln(SMes*) 3 (Ln) La, Ce, Pr, and Nd) indicates that the U-S, U-C ipso , and U-C ortho bond lengths are shorter than the corresponding ones in the 4f-element analogues, when taking into account the variation in the ionic radii of the metals. The distance between the uranium and the carbon atoms involved in the U center dot center dot center dot H-C ε agostic interaction of each thiolate ligand is shorter, by ∼ 0.05 angstrom, than that expected from a purely ionic bonding model. The lanthanide( III)/actinide(III) differentiation was analyzed by density functional theory (DFT). The nature of the M-S bond is shown to be ionic strongly polarized at the sulfur for M) U and ion-covalent (i.e. strongly ionic with low orbital interaction), for M) Ln. The strength of the U center dot center dot center dot H-C ε agostic interaction is proposed to be controlled by the maximization of the interaction between U + and S - under steric constraints. The η 3 ligation mode of the aryl-thiolate ligand is also obtained from DFT. (authors)
Magnetic properties of two new compounds: Pr2Ni3Si5 and Ho2Ni3Si5

International Nuclear Information System (INIS)

Mazumdar, C.; Padalia, B.D.; Godart, C.

1994-01-01

Formation of two more new materials, Pr 2 Ni 3 Si 5 and Ho 2 Ni 3 Si 5 , of the series, R 2 Ni 3 Si 5 (R = rare earth and Y) and their magnetic properties are reported here. These materials crystallize in the orthorhombic U 2 Co 3 Si 5 -type structure (space group Ibam). Magnetic susceptibility measurement in the temperature range 5 K--300 K show that the compound Pr 2 Ni 3 Si 5 order antiferromagnetically at T N ∼ 8.5 K and Ho 2 Ni 3 Si 5 at ∼ 6 K. Considering T N (Gd 2 Ni 3 Si 5 ) ∼ 15 K, T N (Pr 2 Ni 3 Si 5 ) ∼ 8.5 K is rather high. The magnetic susceptibility of both of the materials, in the paramagnetic state, follows a Curie-Weiss law with effective moment close to that of the corresponding free trivalent rare earth ion
Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon

Science.gov (United States)

Han, Jianqiang; Yin, Yi Jun; Han, Dong; Dong, LiZhen

2017-09-01

Although plasma enhanced chemical vapor deposition (PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. The deposition temperature and RF power were fixed at 400 °C and 20 W, respectively. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 °C. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution.
Growth of BaSi2 continuous films on Ge(111) by molecular beam epitaxy and fabrication of p-BaSi2/n-Ge heterojunction solar cells

Science.gov (United States)

Takabe, Ryota; Yachi, Suguru; Tsukahara, Daichi; Toko, Kaoru; Suemasu, Takashi

2017-05-01

We grew BaSi2 films on Ge(111) substrates by various growth methods based on molecular beam epitaxy (MBE). First, we attempted to form BaSi2 films directly on Ge(111) by MBE without templates. We next formed BaSi2 films using BaGe2 templates as commonly used for MBE growth of BaSi2 on Si substrates. Contrary to our prediction, the lateral growth of BaSi2 was not promoted by these two methods; BaSi2 formed not into a continuous film but into islands. Although streaky patterns of reflection high-energy electron diffraction were observed inside the growth chamber, no X-ray diffraction lines of BaSi2 were observed in samples taken out from the growth chamber. Such BaSi2 islands were easily to get oxidized. We finally attempted to form a continuous BaSi2 template layer on Ge(111) by solid phase epitaxy, that is, the deposition of amorphous Ba-Si layers onto MBE-grown BaSi2 epitaxial islands, followed by post annealing. We achieved the formation of an approximately 5-nm-thick BaSi2 continuous layer by this method. Using this BaSi2 layer as a template, we succeeded in forming a-axis-oriented 520-nm-thick BaSi2 epitaxial films on Ge substrates, although (111)-oriented Si grains were included in the grown layer. We next formed a B-doped p-BaSi2(20 nm)/n-Ge(111) heterojunction solar cell. A wide-spectrum response from 400 to 2000 nm was achieved. At an external bias voltage of 1 V, the external quantum efficiency reached as high as 60%, demonstrating the great potential of BaSi2/Ge combination. However, the efficiency of a solar cell under AM1.5 illumination was quite low (0.1%). The origin of such a low efficiency was examined.
RBS using {sup 28}Si beams

Energy Technology Data Exchange (ETDEWEB)

Ophel, T.R. [Australian National Univ., Canberra, ACT (Australia); Mitchell, I.V. [University of Western Ontario, London, ON (Canada). Dept. of Physics

1996-12-31

Measurements of RBS using {sup 28}Si beams have been made to evaluate the enhancement of sensitivity that should obtain from kinematic suppression of silicon substrate scattering. Two detection methods were tried. Aside from a surface barrier detector, a magnetic spectrometer, instrumented with a multi-electrode gas focal plane detector, was used to indicate the resolution attainable with low energy {sup 28}Si ions. The results confirm that kinematically suppressed RBS does provide greatly improved sensitivity. 5 refs., 2 figs.
RBS using {sup 28}Si beams

Energy Technology Data Exchange (ETDEWEB)

Ophel, T R [Australian National Univ., Canberra, ACT (Australia); Mitchell, I V [University of Western Ontario, London, ON (Canada). Dept. of Physics

1997-12-31

Measurements of RBS using {sup 28}Si beams have been made to evaluate the enhancement of sensitivity that should obtain from kinematic suppression of silicon substrate scattering. Two detection methods were tried. Aside from a surface barrier detector, a magnetic spectrometer, instrumented with a multi-electrode gas focal plane detector, was used to indicate the resolution attainable with low energy {sup 28}Si ions. The results confirm that kinematically suppressed RBS does provide greatly improved sensitivity. 5 refs., 2 figs.
Synthesizing single-phase β-FeSi2 via ion beam irradiations of Fe/Si bilayers

International Nuclear Information System (INIS)

Milosavljevic, M.; Dhar, S.; Schaaf, P.; Bibic, N.; Lieb, K.P.

2001-01-01

This paper presents results on the direct synthesis of the β-FeSi 2 phase by ion beam mixing of Fe/Si bilayers with Xe ions. The influence of the substrate temperature, ion fluence and energy on the growth of this phase was investigated using Rutherford backscattering (RBS), X-ray diffraction (XRD) and conversion electron Moessbauer spectroscopy (CEMS). Complete growth of single-phase β-FeSi 2 was achieved by 205 keV Xe ion irradiation to a fluence of 2x10 16 ions/cm 2 at 600 deg. C. We propose a two-step reaction mechanism involving thermal and ion beam energy deposition
Fracture and subcritical crack-growth behavior of Y-Si-Al-O-N glasses and Si3N4 ceramics

International Nuclear Information System (INIS)

Bhatnagar, A.; Hoffman, M.J.; Dauskardt, R.H.

2000-01-01

Fracture and environmentally assisted subcritical crack-growth processes are examined in bulk Y-Si-Al-O-N oxynitride glasses with compositions typical of the grain boundary phase of silicon nitride ceramics. Both long-crack (in compact tension specimens) as well as short-crack behavior (using indentation techniques) were investigated to establish a reliable fracture toughness and to elucidate the anomalous densification behavior of the oxynitride glass. Environmentally assisted subcritical crack-growth processes were studied in inert, moist, and wet environments under both cyclic and static loading conditions. Behavior is discussed in terms of the interaction of the environment with the crack tip. Likely mechanisms for environmentally assisted crack growth are discussed and related to the subcritical crack-growth behavior of silicon nitride ceramics
Subsolidus phase relationships of the {beta}-sialon solid solution in the oxygen-rich part of the Nd-Si-Al-O-N system

Energy Technology Data Exchange (ETDEWEB)

Kaiser, A.; Telle, R. [Rheinisch Westfaelische Technische Hochschule Aachen (Germany). Inst. fuer Gesteinshuettenkunde; Herrmann, M.; Richter, H.J.; Hermel, W. [Fraunhofer Inst. Keramische Technologien und Sinterwerkstoffe, Dresden (Germany)

2001-10-01

The subsolidus phase relationships in the Nd{sub 2}O{sub 3}-Al{sub 2}O{sub 3}-SiO{sub 2} system and in the Si{sub 6-z}Al{sub z}O{sub z}N{sub 8-z} (0 {<=} z {<=} 4)-''Al{sub 2}O{sub 3}:AlN''-Al{sub 2}O{sub 3}-Nd{sub 2}O{sub 3}-SiO{sub 2}-range of the Nd-Si-Al-O-N system have been determined. 50 three- and four-phase equilibria were established in this phase region. The phase equilibria define the regions of stable coexistence between {beta}-sialon Si{sub 6-z}Al{sub z}O{sub z}N{sub 8-z} (0 {<=} z {<=} 4) and oxide or oxynitride compounds, which are potential grain boundary phases for silicon nitride ceramics. {beta}-Si{sub 3}N{sub 4} coexists with N-melilite (Nd{sub 2}Si{sub 3-x}Al{sub x}N{sub 4-x} (0 {<=} x {<=} 1)), N-{alpha}-wollastonite NdSi{sub 2}ON, a nitrogen-rich (Al, N)-apatite solid solution and Nd{sub 2}Si{sub 2}O{sub 7}. Between 0 {<=} z {<=} 0.8 {beta}-sialon (Si{sub 6-z}Al{sub z}O{sub z}N{sub 8-z}) is compatible with N-melilite (Nd{sub 2}Si{sub 3-x}Al{sub x}N{sub 4-x} (x = 1)), an (Al,N)-apatite of intermediate composition and Nd{sub 2}Si{sub 2}O{sub 7}. The equilibrium phases between z = 0.8 to z = 4 are NdAlO{sub 3} and the U-phase (Nd{sub 3}Si{sub 3-x}Al{sub 3+x}O{sub 12+x}N{sub 2-x}) as well as NdAl{sub 11+x}O{sub 18}N{sub x} (x = 1) and corundum at the Al-rich terminal composition (z = 4). (orig.)
Pinning-free GaAs MIS structures with Si interface control layers formed on (4 x 6) reconstructed (0 0 1) surface

Energy Technology Data Exchange (ETDEWEB)

Anantathanasarn, Sanguan; Hasegawa, Hideki

2003-06-30

(0 0 1)-Oriented GaAs metal-insulator-semiconductor (MIS) structures having a silicon interface control layer (Si ICL) were fabricated on surfaces having Ga-rich (4x6) reconstructions. Si ICL was grown by molecular beam epitaxy. MIS structures were fabricated by partially converting Si ICL to SiN{sub x} by direct nitridation, and further depositing a thick SiO{sub 2} layer on top as the main passivation dielectric by plasma-assisted chemical vapor deposition. Reflection high-energy electron diffraction, in situ X-ray photoelectron spectroscopy and MIS capacitance-voltage (C-V) techniques were used for characterization. The initial surface reconstruction was found to have a surprisingly strong effect on the degree of Fermi level pinning at the MIS interface. In contrast to the standard As-rich (2x4) surface, which results in strongly pinned MIS interfaces, the novel SiO{sub 2}/SiN{sub x}/Si ICL/GaAs MIS structures formed on ''genuine'' (4x6) surface realized complete unpinning of Fermi level over the entire band gap with a minimum interface state density of 4x10{sup 10} cm{sup -2} eV{sup -1} range.

Effect of template-induced surface species on electronic structure and photocatalytic activity of g-C{sub 3}N{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Shen, Yu; Guo, Xiaojuan; Bo, Xiangkun; Wang, Yongzheng [Key Lab of Mesoscopic Chemistry MOE, School of Chemistry & Chemical Engineering, Nanjing University, Nanjing 210023 (China); Guo, Xiangke [Key Lab of Mesoscopic Chemistry MOE, School of Chemistry & Chemical Engineering, Nanjing University, Nanjing 210023 (China); Hubei Key Laboratory for Processing and Application of Catalytic Materials, Huanggang Normal University, Huanggang 438000 (China); Xie, Mingjiang, E-mail: xiemingjiang@hotmail.com [Key Lab of Mesoscopic Chemistry MOE, School of Chemistry & Chemical Engineering, Nanjing University, Nanjing 210023 (China); Guo, Xuefeng, E-mail: guoxf@nju.edu.cn [Key Lab of Mesoscopic Chemistry MOE, School of Chemistry & Chemical Engineering, Nanjing University, Nanjing 210023 (China); Hubei Key Laboratory for Processing and Application of Catalytic Materials, Huanggang Normal University, Huanggang 438000 (China)

2017-02-28

Highlights: • The effect of template on the surface chemistry of g-C{sub 3}N{sub 4} were investigated. • Template induces more non-graphitic species (sp{sup 3}−C−C− and −NH{sub x}) on g-C{sub 3}N{sub 4}. • Non-graphitic species influence electronic structure and performance of g-C{sub 3}N{sub 4}. - Abstract: In view of the fact that the photocatalytic activity of graphitic carbon nitride (g-C{sub 3}N{sub 4}) is greatly influenced by its electronic structure, herein, effect of templates induced surface species variation on the electronic structure and photocatalytic activity of the templated g-C{sub 3}N{sub 4} was investigated. By mixing the precursor of cyanamide with different templates (SiO{sub 2}, Al{sub 2}O{sub 3} and template-free) in the preparation of graphitic carbon nitride (g-C{sub 3}N{sub 4}), carbon nitrides with different surface species were obtained. The obtained carbon nitride (g-C{sub 3}N{sub 4}-Si) templated by SiO{sub 2} nanoparticles exhibits enlarged band gap (3.26 eV) and enhanced photo-degradation ability towards Methyl Orange (MO) compared to that of bulk g-C{sub 3}N{sub 4} (2.67 eV) synthesized from direct condensation/carbonization of melamine and Al{sub 2}O{sub 3}-templated g-C{sub 3}N{sub 4}-Al (2.76 eV). Detailed characterizations confirm that the introduction of templates in the synthesis process resulted in more non-graphitic species (sp{sup 3}−C−C− and −NH{sub x}) on the surface of the derived carbon nitrides, exerting remarkable effect on the electronic structure and photocatalytic performance.
Vertical dynamics of a single-span beam subjected to moving mass-suspended payload system with variable speeds

Science.gov (United States)

He, Wei

2018-03-01

This paper presents the vertical dynamics of a simply supported Euler-Bernoulli beam subjected to a moving mass-suspended payload system of variable velocities. A planar theoretical model of the moving mass-suspended payload system of variable speeds is developed based on several assumptions: the rope is massless and rigid, and its length keeps constant; the stiffness of the gantry beam is much greater than the supporting beam, and the gantry beam can be treated as a mass particle traveling along the supporting beam; the supporting beam is assumed as a simply supported Bernoulli-Euler beam. The model can be degenerated to consider two classical cases-the moving mass case and the moving payload case. The proposed model is verified using both numerical and experimental methods. To further investigate the effect of possible influential factors, numerical examples are conducted covering a range of parameters, such as variable speeds (acceleration or deceleration), mass ratios of the payload to the total moving load, and the pendulum lengths. The effect of beam flexibility on swing response of the payload is also investigated. It is shown that the effect of a variable speed is significant for the deflections of the beam. The accelerating movement tends to induce larger beam deflections, while the decelerating movement smaller ones. For accelerating or decelerating movements, the moving mass model may underestimate the deflections of the beam compared with the presented model; while for uniform motion, both the moving mass model and the moving mass-payload model lead to same beam responses. Furthermore, it is observed that the swing response of the payload is not sensitive to the stiffness of the beam for operational cases of a moving crane, thus a simple moving payload model can be employed in the swing control of the payload.
Modeling of InGaN/Si tandem cells: comparison between 2-contacts/4-contacts

Directory of Open Access Journals (Sweden)

El-Huni Walid

2017-01-01

Full Text Available Due to its electrical and optical interesting properties, InGaN alloy is being intensively studied to be combined with silicon in order to achieve low-cost high-efficiency solar cell. However, a relatively thick monophasic layer of InGaN is difficult to grow due to the relaxation issue in material. This issue can be avoided by semibulk structure. In this work, we present an InGaN/Si double-junction solar cell modeled using Silvaco-ATLAS TCAD software. We have taken into account polarization effect in III-N materials. We have shown that 50% of indium is needed to ensure the current matching between the top cell and the bottom cell in 2-terminal configuration. Such high indium composition is technologically challenging to grow. Thus, we have modeled a 4-terminals solar cell with relatively low indium composition (In = 25% where current matching is not needed. With technologically feasible structural parameters, we have shown that an efficiency near to 30% can be achieved with InGaN/Si 4-contact tandem cell.
Modeling of InGaN/Si tandem cells: comparison between 2-contacts/4-contacts

Science.gov (United States)

El-Huni, Walid; Migan, Anne; Alamarguy, David; Djebbour, Zakaria

2017-03-01

Due to its electrical and optical interesting properties, InGaN alloy is being intensively studied to be combined with silicon in order to achieve low-cost high-efficiency solar cell. However, a relatively thick monophasic layer of InGaN is difficult to grow due to the relaxation issue in material. This issue can be avoided by semibulk structure. In this work, we present an InGaN/Si double-junction solar cell modeled using Silvaco-ATLAS TCAD software. We have taken into account polarization effect in III-N materials. We have shown that 50% of indium is needed to ensure the current matching between the top cell and the bottom cell in 2-terminal configuration. Such high indium composition is technologically challenging to grow. Thus, we have modeled a 4-terminals solar cell with relatively low indium composition (In = 25%) where current matching is not needed. With technologically feasible structural parameters, we have shown that an efficiency near to 30% can be achieved with InGaN/Si 4-contact tandem cell.
Fabrication of graphene oxide decorated with Fe3O4@SiO2 for immobilization of cellulase

Science.gov (United States)

Li, Yue; Wang, Xiang-Yu; Jiang, Xiao-Ping; Ye, Jing-Jing; Zhang, Ye-Wang; Zhang, Xiao-Yun

2015-01-01

Fe3O4@SiO2-graphene oxide (GO) composites were successfully fabricated by chemical binding of functional Fe3O4@SiO2 and GO and applied to immobilization of cellulase via covalent attachment. The prepared composites were further characterized by transmission electron microscopy and Fourier transform infrared spectroscopy. Fe3O4 nanoparticles (NPs) were monodisperse spheres with a mean diameter of 17 ± 0.2 nm. The thickness of SiO2 layer was calculated as being 6.5 ± 0.2 nm. The size of Fe3O4@SiO2 NPs was 24 ± 0.3 nm, similar to that of Fe3O4@SiO2-NH2. Fe3O4@SiO2-GO composites were synthesized by linking of Fe3O4@SiO2-NH2 NPs to GO with the catalysis of EDC and NHS. The prepared composites were used for immobilization of cellulase. A high immobilization yield and efficiency of above 90 % were obtained after the optimization. The half-life of immobilized cellulase (722 min) was 3.34-fold higher than that of free enzyme (216 min) at 50 °C. Compared with the free cellulase, the optimal temperature of the immobilized enzyme was not changed; but the optimal pH was shifted from 5.0 to 4.0, and the thermal stability was enhanced. The immobilized cellulase could be easily separated and reused under magnetic field. These results strongly indicate that the cellulase immobilized onto the Fe3O4@SiO2-GO composite has potential applications in the production of bioethanol.
Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters

DEFF Research Database (Denmark)

Gurpinar, Emre; Yang, Yongheng; Iannuzzo, Francesco

2016-01-01

In this paper, thermal loading of the state-of-the-art GaN HEMTs and traditional Si IGBTs in 3L-ANPC PV inverters is presented considering real-field long-term mission profiles (i.e., ambient temperature and solar irradiance). A comparison of Si IGBT against GaN HEMT with three different possibil......In this paper, thermal loading of the state-of-the-art GaN HEMTs and traditional Si IGBTs in 3L-ANPC PV inverters is presented considering real-field long-term mission profiles (i.e., ambient temperature and solar irradiance). A comparison of Si IGBT against GaN HEMT with three different...... be achieved without compromise of operating efficiency with GaN HEMTs. Both simulations and experimental tests are provided to demonstrate the thermal loading analysis approach. More important, the proposed analysis and comparison approach can be used for lifetime and reliability analysis of wide...
Preliminary Characterization of the O4+ Beam in Linac 3

CERN Document Server

Dumas, L; Scrivens, R; CERN. Geneva. AB Department

2007-01-01

The new GTS-LHC ECR ion source was installed in 2005. An oxygen 4+ beam was delivered to LEIR both for injection line (June 2005) and for the ring commissioning (September to December 2005). During these runs, studies were made of the beam transport in the Linac and towards LEIR. Some of the most significant results concerning the Linac are presented in this report. From 2006 the ECR source and the Linac3 delivered a lead beam for the LEIR commissioning, leaving some questions open for the oxygen beam transport. This report serves as a summary of the status of the investigations on the oxygen beam.
Roymillerite, Pb24Mg9(Si9AlO28)(SiO4)(BO3)(CO3)10(OH)14O4, a new mineral: mineralogical characterization and crystal chemistry

Science.gov (United States)

Chukanov, Nikita V.; Jonsson, Erik; Aksenov, Sergey M.; Britvin, Sergey N.; Rastsvetaeva, Ramiza K.; Belakovskiy, Dmitriy I.; Van, Konstantin V.

2017-11-01

The new mineral roymillerite Pb24Mg9(Si9AlO28)(SiO4)(BO3)(CO3)10(OH)14O4, related to britvinite and molybdophyllite, was discovered in a Pb-rich assemblage from the Kombat Mine, Grootfontein district, Otjozondjupa region, Namibia, which includes also jacobsite, cerussite, hausmannite, sahlinite, rhodochrosite, barite, grootfonteinite, Mn-Fe oxides, and melanotekite. Roymillerite forms platy single-crystal grains up to 1.5 mm across and up to 0.3 mm thick. The new mineral is transparent, colorless to light pink, with a strong vitreous lustre. Cleavage is perfect on (001). Density calculated using the empirical formula is equal to 5.973 g/cm3. Roymillerite is optically biaxial, negative, α = 1.86(1), β ≈ γ = 1.94(1), 2 V (meas.) = 5(5)°. The IR spectrum shows the presence of britvinite-type tetrahedral sheets, {CO}3^{2 - }, {BO}3^{3 - }, and OH- groups. The chemical composition is (wt%; electron microprobe, H2O and CO2 determined by gas chromatography, the content of B2O3 derived from structural data): MgO 4.93, MnO 1.24, FeO 0.95, PbO 75.38, B2O3 0.50, Al2O3 0.74, CO2 5.83, SiO2 7.90, H2O 1.8, total 99.27. The empirical formula based on 83 O atoms pfu (i.e. Z = 1) is Pb24.12Mg8.74Mn1.25Fe0.94B1.03Al1.04C9.46Si9.39H14.27O83. The crystal structure was determined using single-crystal X-ray diffraction data. The new mineral is triclinic, space group P \\bar{1}, with a = 9.315(1), b = 9.316(1), c = 26.463(4) Å, α = 83.295(3)°, β = 83.308(3)°, γ = 60.023(2)°, V = 1971.2(6) Å3. The crystal structure of roymillerite is based built by alternating pyrophyllite-type TOT-modules Mg9(OH)8[(Si,Al)10O28] and I-blocks Pb24(OH)6O4(CO3)10(BO3,SiO4). The strongest lines of the powder X-ray diffraction pattern [ d, Å (I, %) ( hkl)] are: 25.9 (100) (001), 13.1 (11) (002), 3.480 (12) (017, 107, -115, 1-15), 3.378 (14) (126, 216), 3.282 (16) (-2-15, -1-25), 3.185 (12) (-116, 1-16), 2.684 (16) (031, 301, 030, 300, 332, -109, 0-19, 1-18), 2.382 (11) (0.0.-11). Roymillerite is
Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs

Energy Technology Data Exchange (ETDEWEB)

Usman, Muhammad; Hallen, Anders; Ghandi, Reza; Domeij, Martin, E-mail: musman@kth.s [Microelectronics and Applied Physics, School of Communication and Information Technology, Royal Institute of Technology (KTH), Electrum 229, 16440 Kista (Sweden)

2010-11-01

Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10{sup 10}-10{sup 11} cm{sup -2}. The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.
Swift heavy-ion induced trap generation and mixing at Si/SiO{sub 2} interface in depletion n-MOS

Energy Technology Data Exchange (ETDEWEB)

Shinde, N. [Ecotopia Science Institute, Division of Energy Science, Nagoya University, Nagoya 464-8603 (Japan) and Department of Physics, University of Pune, Pune 411 007 (India)]. E-mail: nss@nucl.nagoya-u.ac.jp; Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411 007 (India); Dhole, S.D. [Department of Physics, University of Pune, Pune 411 007 (India)

2006-01-15

Large channel depletion n-channel MOSFET (Metal oxide semiconductor field effect transistor) is a basic Si-SiO{sub 2} structure to understand irradiation-induced modifications. The contribution of interface and oxide states denoted as {delta}N {sub IT} and {delta}N {sub OT}, respectively, was separated out by using I {sub D}-V {sub DS}, I {sub D}-V {sub GS} measurements. The threshold voltage shift {delta}V {sub T} (V {sub T-irrad} - V {sub T-virgin}) increased for all ions (50 MeV Li, B, F, P and Ni) over the fluence of 2 x 10{sup 11}-2 x 10{sup 13} ions/cm{sup 2}. The increase in {delta}N {sub IT} was associated to trap generation at Si-SiO{sub 2} interface, but a small change in {delta}N {sub OT} indicate less charge trapping in oxide. The electronic energy loss S {sub e} induced increase in {delta}N {sub IT} is not adequate to explain the large shift in threshold voltage. A rough estimate shows that the channel width, W should decrease by 40% for a large increase in {delta}N {sub IT}. Thus, the possible factor affecting reduction of W may be ion beam mixing induced broadening of Si-SiO{sub 2} interface.
Facile synthesis of graphitic C3N4 nanoporous-tube with high enhancement of visible-light photocatalytic activity

Science.gov (United States)

Zhao, Ruiru; Gao, Jianping; Mei, Shunkang; Wu, Yongli; Wang, Xiaoxue; Zhai, Xiangang; Yang, Jiangbing; Hao, Chaoyue; Yan, Jing

2017-12-01

A simple and convenient method was used to synthesize a graphitic carbon nitride (g-C3N4) nanoporous-tube by using SiO2 nanoparticles as pore formers. The structure of the g-C3N4 nanoporous-tube was characterized by the SEM and TEM images. Taking photodegradation of RhB as an example, the photocatalytic activity of the as-prepared g-C3N4 nanoporous-tube was investigated. It can photodegrade 90% RhB in 40 min under visible-light irradiation and obtain a k value of 0.04491 min-1, which is 8.16 times that of bulk g-C3N4, 3.09 times that of tubular g-C3N4 and 1.48 times that of tubular g-C3N4-SiO2. The significant enhancement in photocatalytic efficiency is due to the edge effect of the pores and the special structure of the tubes. In addition, the possible mechanism of photocatalytic degradation of RhB was also proposed based on the trapping experiment of active species, which indicated that the superoxide radicals ({{{{O}}}2}\\bullet -) and the holes (h +) were the main reactive species in this photocatalyst. This work may open up a new idea of innovation in g-C3N4 structure and inspire its follow-up study.
Gold Nanoparticles on Mesoporous SiO2-Coated Magnetic Fe3O4 Spheres: A Magnetically Separatable Catalyst with Good Thermal Stability

Directory of Open Access Journals (Sweden)

Huan Liu

2013-11-01

Full Text Available Fe3O4 spheres with an average size of 273 nm were prepared in the presence of CTAB by a solvothermal method. The spheres were modified by a thin layer of SiO2, and then coated by mesoporous SiO2 (m-SiO2 films, by using TEOS as a precursor and CTAB as a soft template. The resulting m-SiO2/Fe3O4 spheres, with an average particle size of 320 nm, a high surface area (656 m2/g, and ordered nanopores (average pore size 2.5 nm, were loaded with gold nanoparticles (average size 3.3 nm. The presence of m-SiO2 coating could stabilize gold nanoparticles against sintering at 500 °C. The material showed better performance than a conventional Au/SiO2 catalyst in catalytic reduction of p-nitrophenol with NaBH4. It can be separated from the reaction mixture by a magnet and be recycled without obvious loss of catalytic activity. Relevant characterization by XRD, TEM, N2 adsorption-desorption, and magnetic measurements were conducted.
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture

Science.gov (United States)

Albani, Marco; Marzegalli, Anna; Bergamaschini, Roberto; Mauceri, Marco; Crippa, Danilo; La Via, Francesco; von Känel, Hans; Miglio, Leo

2018-05-01

The exceptionally large thermal strain in few-micrometers-thick 3C-SiC films on Si(111), causing severe wafer bending and cracking, is demonstrated to be elastically quenched by substrate patterning in finite arrays of Si micro-pillars, sufficiently large in aspect ratio to allow for lateral pillar tilting, both by simulations and by preliminary experiments. In suspended SiC patches, the mechanical problem is addressed by finite element method: both the strain relaxation and the wafer curvature are calculated at different pillar height, array size, and film thickness. Patches as large as required by power electronic devices (500-1000 μm in size) show a remarkable residual strain in the central area, unless the pillar aspect ratio is made sufficiently large to allow peripheral pillars to accommodate the full film retraction. A sublinear relationship between the pillar aspect ratio and the patch size, guaranteeing a minimal curvature radius, as required for wafer processing and micro-crack prevention, is shown to be valid for any heteroepitaxial system.
Thermodynamic study on co-deposition of ZrB2–SiC from ZrCl4–BCl3–CH3SiCl3–H2–Ar system

International Nuclear Information System (INIS)

Deng, Juanli; Cheng, Laifei; Zheng, Guopeng; Su, Kehe; Zhang, Litong

2012-01-01

Thermodynamics phase diagram of ZrB 2 –SiC co-deposited from precursors of ZrCl 4 –BCl 3 –CH 3 SiCl 3 (methyltrichlorosilane, MTS)–H 2 –Ar has been investigated in detail by using the FactSage code and its embedded database (130 species being involved). The yields of condensed phases in the co-deposition process have been examined as the functions of the inject reactant ratios of BCl 3 / (BCl 3 + MTS) and H 2 / (ZrCl 4 + BCl 3 + MTS), and the temperature at a fixed pressure of 5 kPa. The results show that their yields strongly depend on the molar ratios of the inject reactants and the temperature. Consequently, the pure ZrB 2 –SiC composite without free C, B 4 C, ZrC and ZrSi can be co-deposited under the ideal condition by adjusting the reactant ratios and the temperature. The gas-phase equilibrium concentration distribution shows that the high input amount of H 2 is favorable for the co-deposition of ZrB 2 and SiC at a fixed ratio of ZrCl 4 :BCl 3 :MTS:Ar. In the end, the theoretical results can lay down guidelines for increasing the experimental yields of ZrB 2 and SiC. - Highlights: ► The exact ratio of ZrB 2 and SiC could be obtained by adjusting input gas ratios. ► The other condensed phase species could appear under some suitable conditions ► The H 2 acting as reaction species directly influences the deposition process. ► The high H 2 input amount is favorable for the co-deposition of ZrB 2 and SiC. ► The flow rate range of the H 2 pump should be increased in the experimental study.
[Effect of charge compensation on emission spectrum of Sr2SiO4 : Dy3+ phosphor].

Science.gov (United States)

Li, Pan-Lai; Wang, Zhi-Jun; Yang, Zhi-Ping; Guo, Qing-Lin

2009-01-01

The Sr2SiO4 : Dy3+ phosphor was synthesized by the high temperature solid-state reaction method in air. Dy2O3 (99.9%), SiO2 (99.9%), SrCO3 (99.9%), Li2CO3 (99.9%), Na2CO3 (99.9%) and K2CO3 (99.9%) were used as starting materials, and the Dy3+ doping concentration was 2 mol%. The emission spectrum was measured by a SPEX1404 spectrophotometer, and all the characterization of the phosphors was conducted at room temperature. The emission spectrum of Sr2 SiO4 : Dy3+ phosphor showed several bands centered at 486, 575 and 665 nm under the 365 nm excitation. The effect of Li+, Na+ and K+ on the emission spectra of Sr2SiO4 : Dy3+ phosphor was studied. The results show that the location of the emission spectrum of Sr2SiO4 : Dy3+ phosphor was not influenced by Li+, Na+ and K+. However, the emission spectrum intensity was greatly influenced by Li+, Na+ and K+, and the evolvement trend was monotone with different charge compensation, i. e. the emission spectrum intensity of Sr2SiO4 : Dy3+ phosphor firstly increased with increasing Li+ concentration, then decreased. However the charge compensation concentration corresponding to the maximum emission intensity was different with different charge compensation, and the concentration is 4, 3 and 3 mol% corresponding to Li+, Na+ and K+, respectively. And the theoretical reason for the above results was analyzed.
C and Si delta doping in Ge by CH_3SiH_3 using reduced pressure chemical vapor deposition

International Nuclear Information System (INIS)

Yamamoto, Yuji; Ueno, Naofumi; Sakuraba, Masao; Murota, Junichi; Mai, Andreas; Tillack, Bernd

2016-01-01

C and Si delta doping in Ge are investigated using a reduced pressure chemical vapor deposition system to establish atomic-order controlled processes. CH_3SiH_3 is exposed at 250 °C to 500 °C to a Ge on Si (100) substrate using H_2 or N_2 carrier gas followed by a Ge cap layer deposition. At 350 °C, C and Si are uniformly adsorbed on the Ge surface and the incorporated C and Si form steep delta profiles below detection limit of SIMS measurement. By using N_2 as carrier gas, the incorporated C and Si doses in Ge are saturated at one mono-layer below 350 °C. At this temperature range, the incorporated C and Si doses are nearly the same, indicating CH_3SiH_3 is adsorbed on the Ge surface without decomposing the C−Si bond. On the other hand, by using H_2 as carrier gas, lower incorporated C is observed in comparison to Si. CH_3SiH_3 injected with H_2 carrier gas is adsorbed on Ge without decomposing the C−Si bond and the adsorbed C is reduced by dissociation of the C−Si bond during temperature ramp up to 550 °C. The adsorbed C is maintained on the Ge surface in N_2 at 550 °C. - Highlights: • C and Si delta doping in Ge is investigated using RPCVD system by CH_3SiH_3 exposure. • Atomically flat C and Si delta layers are fabricated at 350 °C. • Incorporated C and Si doses are saturated at one mono-layer below 350 °C. • CH_3SiH_3 adsorption occurred without decomposing C−Si bond. • Adsorbed C is desorbed due to dissociation by hydrogen during postannealing at 550 °C.
Growth and Device Performance of AlGaN/GaN Heterostructure with AlSiC Precoverage on Silicon Substrate

Directory of Open Access Journals (Sweden)

Jae-Hoon Lee

2014-01-01

Full Text Available A crack-free AlGaN/GaN heterostructure was grown on 4-inch Si (111 substrate with initial dot-like AlSiC precoverage layer. It is believed that introducing the AlSiC layer between AlN wetting layer and Si substrate is more effective in obtaining a compressively stressed film growth than conventional Al precoverage on Si surface. The metal semiconductor field effect transistor (MESFET, fabricated on the AlGaN/GaN heterostructure grown with the AlSiC layer, exhibited normally on characteristics, such as threshold voltage of −2.3 V, maximum drain current of 370 mA/mm, and transconductance of 124 mS/mm.
Interfacial reaction in SiC_f/Ti-6Al-4V composite by using transmission electron microscopy

International Nuclear Information System (INIS)

Huang, Bin; Li, Maohua; Chen, Yanxia; Luo, Xian; Yang, Yanqing

2015-01-01

The interfacial reactions of continuous SiC fiber reinforced Ti-6Al-4V matrix composite (SiC_f/Ti-6Al-4V composite) and continuous SiC fiber coated by C reinforced Ti-6Al-4V matrix composite (SiC_f/C/Ti-6Al-4V composite) were investigated by using micro-beam electron diffraction (MBED) and energy disperse spectroscopy (EDS) on transmission electron microscopy (TEM). The sequence of the interfacial reactions in the as-processed and exposed at 900°C for 50h SiC_f/Ti-6Al-4V composites can be described as SiC||TiC||Ti_5Si_3 + TiC||Ti-6Al-4V and SiC||TiC||Ti_5Si_3||TiC||Ti_5Si_3||TiC||Ti_5Si_3||Ti-6Al-4V, respectively. Additionally, both in as-processed and exposed composites, Ti_3SiC_2 and Ti_3Si are absent at the interfaces. For the SiC_f/C/Ti-6Al-4V composite exposed at 900 °C for 50 h, the sequence of the interfacial reaction can be described as SiC||C||TiC_F||TiC_C||Ti-6Al-4V before C coating is completely consumed by interfacial reaction. When interfacial reaction consumes C coating completely, the sequence of the interfacial reaction can be described as SiC||TiC||Ti_5Si_3||TiC||Ti-6Al-4V. Furthermore, in SiC_f/C/Ti-6Al-4V composite, C coating can absolutely prevent Si diffusion from SiC fiber to matrix. Basing on these results, the model of formation process of the interfacial reaction products in the composites was proposed. - Highlights: • We obtained the sequence of the interfacial reactions in the as-processed and exposed at 900 °C for 50 h SiC_f/Ti-6Al-4 V composites as well as in the SiC_f/C/Ti-6Al-4 V composite exposed at 900 °C for 50 h. • We verified that both in as-processed and exposed SiC_f/Ti-6Al-4 V composites, Ti_3SiC_2 and Ti_3Si are absent at the interfaces. • Carbon coating can absolutely prevent silicon diffusion from SiC fiber to matrix. • Basing on these results, the model of formation process of the interfacial reaction products in the composites was proposed.
Fabrication of graphene oxide decorated with Fe3O4@SiO2 for immobilization of cellulase

International Nuclear Information System (INIS)

Li, Yue; Wang, Xiang-Yu; Jiang, Xiao-Ping; Ye, Jing-Jing; Zhang, Ye-Wang; Zhang, Xiao-Yun

2015-01-01

Fe 3 O 4 @SiO 2 –graphene oxide (GO) composites were successfully fabricated by chemical binding of functional Fe 3 O 4 @SiO 2 and GO and applied to immobilization of cellulase via covalent attachment. The prepared composites were further characterized by transmission electron microscopy and Fourier transform infrared spectroscopy. Fe 3 O 4 nanoparticles (NPs) were monodisperse spheres with a mean diameter of 17 ± 0.2 nm. The thickness of SiO 2 layer was calculated as being 6.5 ± 0.2 nm. The size of Fe 3 O 4 @SiO 2 NPs was 24 ± 0.3 nm, similar to that of Fe 3 O 4 @SiO 2 –NH 2 . Fe 3 O 4 @SiO 2 –GO composites were synthesized by linking of Fe 3 O 4 @SiO 2 –NH 2 NPs to GO with the catalysis of EDC and NHS. The prepared composites were used for immobilization of cellulase. A high immobilization yield and efficiency of above 90 % were obtained after the optimization. The half-life of immobilized cellulase (722 min) was 3.34-fold higher than that of free enzyme (216 min) at 50 °C. Compared with the free cellulase, the optimal temperature of the immobilized enzyme was not changed; but the optimal pH was shifted from 5.0 to 4.0, and the thermal stability was enhanced. The immobilized cellulase could be easily separated and reused under magnetic field. These results strongly indicate that the cellulase immobilized onto the Fe 3 O 4 @SiO 2 –GO composite has potential applications in the production of bioethanol
Cube-like Fe3O4@SiO2@Au@Ag magnetic nanoparticles: a highly efficient SERS substrate for pesticide detection

Science.gov (United States)

Sun, Mei; Zhao, Aiwu; Wang, Dapeng; Wang, Jin; Chen, Ping; Sun, Henghui

2018-04-01

As a novel surface-enhanced Raman spectroscopic (SERS) nanocomposite, cube-like Fe3O4@SiO2@Au@Ag magnetic nanoparticles (NPs) were synthesized for the first time. Cube-like α-Fe2O3 NPs with uniform size were achieved by optimizing reaction temperature and time. Firstly, the cube-like Fe3O4@SiO2 with good dispersity was achieved by calcining α-Fe2O3@SiO2 NPs in hydrogen atmosphere at 360 °C for 2.5 h, followed by self-assembling a PEI shell via sonication. Furthermore, the Au@Ag particles were densely assembled on the Fe3O4@SiO2 NPs to form the Fe3O4@SiO2@Au@Ag composite structure via strong Ag-N interaction. The obtained nanocomposites exhibited an excellent SERS behavior, reflected by the low detection of limit (p-ATP) at the 5 × 10-14 M level. Moreover, these nanocubes were used for the detection of thiram, and the detection limit can reach 5 × 10-11 M. Meanwhile, the U.S. Environmental Protection Agency specifies that the residue in fruit must be lower than 7 ppm. Hence, the resulting substrate with high SERS activity has great practical potential applications in the rapid detection of chemical, biological, and environment pollutants with a simple portable Raman instrument at trace level.

Tailoring of SiC nanoprecipitates formed in Si

Energy Technology Data Exchange (ETDEWEB)

Velisa, G., E-mail: gihan.velisa@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, 077125 Magurele (Romania); Trocellier, P. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Thomé, L. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Vaubaillon, S. [CEA, INSTN, UEPTN, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Miro, S.; Serruys, Y.; Bordas, É. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Meslin, E. [CEA, DEN, Service de Recherches de Métallurgie Physique, F-91191 Gif-sur-Yvette (France); Mylonas, S. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Coulon, P.E. [Ecole Polytechnique, Laboratoire des Solides Irradiés, CEA/DSM/IRAMIS-CNRS, 91128 Palaiseau Cedex (France); Leprêtre, F.; Pilz, A.; Beck, L. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

2013-07-15

The SiC synthesis through single-beam of C{sup +}, and simultaneous-dual-beam of C{sup +} and Si{sup +} ion implantations into a Si substrate heated at 550 °C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C{sup +} and 890-keV Si{sup +}) and single-beam (520-keV C{sup +}) ion implantations. Their shape appear as spherical (average size ∼4–5 nm) and they are in epitaxial relationship with the silicon matrix.
Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Rolland, Chloe; Coinon, Christophe; Wallart, Xavier; Leturcq, Renaud [Institute of Electronics Microelectronics and Nanotechnology, UMR CNRS 8520, ISEN Department, Avenue Poincare, CS60069, 59652 Villeneuve d' Ascq Cedex (France); Caroff, Philippe [Institute of Electronics Microelectronics and Nanotechnology, UMR CNRS 8520, ISEN Department, Avenue Poincare, CS60069, 59652 Villeneuve d' Ascq Cedex (France); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)

2013-06-03

We have investigated in situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire facets whereas no detectable incorporation occurs through the seed. Furthermore, the Si incorporation strongly influences the lateral growth of the nanowires without giving rise to significant tapering, revealing the complex interplay between axial and lateral growth.
PENGUJIAN AKTIVITAS KOMPOSIT Fe2O3-SiO2 SEBAGAI FOTOKATALIS PADA FOTODEGRADASI 4-KLOROFENOL (The Activity Test of Fe2O3-SiO2 Composite As Photocatalyst on 4-Chlorophenol Photodegradation

Directory of Open Access Journals (Sweden)

Eko Sri Kunarti

2009-03-01

Full Text Available ABSTRAK Pada penelitian ini telah dilakukan pengujian aktivitas komposit Fe2O3-SiO2 sebagai fotokatalis pada fotodegradasi 4-klorofenol. Penelitian diawali dengan preparasi dan karakterisasi fotokatalis Fe2O3-SiO2. Preparasi dilakukan dengan metode sol-gel pada temperatur kamar menggunakan tetraetil ortosilikat (TEOS dan besi (III nitrat sebagai prekursor diikuti dengan perlakuan termal pada temperature 500 oC. Karakterisasi dilakukan dengan metode spektrometri inframerah, difraksi sinar-X dan spektrometri fluoresensi sinar-X. Uji aktivitas komposit untuk fotodegradasi 4-klorofenol dilakukan dalam reaktor tertutup yang dilengkapi dengan lampu UV. Pada uji ini telah dipelajari pengaruh waktu penyinaran dan pH larutan terhadap efektivitas fotodegradasi 4-klorofenol. Hasil penelitian menunjukkan bahwa komposit Fe2O3-SiO2 dapat dipreparasi dengan metode sol-gel pada temperatur kamar diikuti perlakuan termal. Komposit Fe2O3-SiO2 dapat meningkatkan efektivitas fotodegradasi 4-klorofenol dari 11,86 % menjadi 55,38 %. Efektivitas fotodegradasi 4- klorofenol dipengaruhi waktu penyinaran dan pH larutan yang semakin lama waktu penyinaran efektifitas fotodegradasi semakin tinggi, namun waktu penyinaran yang lebih lama dari 4 jam dapat menurunkan efektivitasnya. pH larutan memberikan pengaruh yang berbeda-beda pada efektivitas fotodegradasi 4-klorofenol. ABSTRACT The activity test of Fe2O3-SiO2 composite as photocatalyst on 4-chlorophenol photodegradation has been studied. The research was initiated by preparation of Fe2O3-SiO2 photocatalyst and followed by characterization. The preparation was conducted by sol-gel method at room temperature using tetraethylorthosilicate (TEOS and iron (III nitrate as precursors followed by thermal treatment at a temperature of 500oC. The characterizations were performed by X-ray Diffraction (XRD, Infrared and X-ray Fluorescence Spectrophotometry. The photocatalytic activity test of composites for 4 chlorophenol
Electronic structures and thermochemical properties of the small silicon-doped boron clusters B(n)Si (n=1-7) and their anions.

Science.gov (United States)

Tai, Truong Ba; Kadłubański, Paweł; Roszak, Szczepan; Majumdar, Devashis; Leszczynski, Jerzy; Nguyen, Minh Tho

2011-11-18

We perform a systematic investigation on small silicon-doped boron clusters B(n)Si (n=1-7) in both neutral and anionic states using density functional (DFT) and coupled-cluster (CCSD(T)) theories. The global minima of these B(n)Si(0/-) clusters are characterized together with their growth mechanisms. The planar structures are dominant for small B(n)Si clusters with n≤5. The B(6)Si molecule represents a geometrical transition with a quasi-planar geometry, and the first 3D global minimum is found for the B(7)Si cluster. The small neutral B(n)Si clusters can be formed by substituting the single boron atom of B(n+1) by silicon. The Si atom prefers the external position of the skeleton and tends to form bonds with its two neighboring B atoms. The larger B(7)Si cluster is constructed by doping Si-atoms on the symmetry axis of the B(n) host, which leads to the bonding of the silicon to the ring boron atoms through a number of hyper-coordination. Calculations of the thermochemical properties of B(n)Si(0/-) clusters, such as binding energies (BE), heats of formation at 0 K (ΔH(f)(0)) and 298 K (ΔH(f)([298])), adiabatic (ADE) and vertical (VDE) detachment energies, and dissociation energies (D(e)), are performed using the high accuracy G4 and complete basis-set extrapolation (CCSD(T)/CBS) approaches. The differences of heats of formation (at 0 K) between the G4 and CBS approaches for the B(n)Si clusters vary in the range of 0.0-4.6 kcal mol(-1). The largest difference between two approaches for ADE values is 0.15 eV. Our theoretical predictions also indicate that the species B(2)Si, B(4)Si, B(3)Si(-) and B(7)Si(-) are systems with enhanced stability, exhibiting each a double (σ and π) aromaticity. B(5)Si(-) and B(6)Si are doubly antiaromatic (σ and π) with lower stability. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
High-rate deposition of SI absorber layers by electron beam evaporation and first electron beam crystallization tests

OpenAIRE

Saager, Stefan; Ben Yaala, Marwa; Heinß, Jens-Peter; Temmler, Dietmar; Pfefferling, Bert; Metzner, Christoph

2014-01-01

In earlier electron beam physical vapor deposition tests (EB-PVD), using a conventional copper crucible (A), high Si deposition rates at relatively high EB power together with a contamination level of 1016 cm-3 are demonstrated. To improve the rate vs. EB power relation as well as the Si layer purity, two alternative high rate EBPVD methods are investigated and reported here - a contact-less crucible setup (B) and a crucible-free setup (C).In these experiments comparable deposition rates of ~...
Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.

Science.gov (United States)

Zhao, Sheng-Xun; Liu, Xiao-Yong; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Wang, Peng-Fei

2016-12-01

Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.
Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

Science.gov (United States)

Sangeetha, P.; Jeganathan, K.; Ramakrishnan, V.

2013-06-01

The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE) on Si (111) substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E2 (high) and A1 (LO) phonon mode of InN core at 490 and 590 cm-1 respectively and E2 (high) phonon mode of GaN shell at 573 cm-1. The free carrier concentration of InN core is found to be low in the order ˜ 1016 cm-3 due to the screening of charge carriers by thin GaN shell. Diameter of InN core evaluated using the spatial correlation model is consistent with the transmission electron microscopic measurement of ˜15 nm. The phonon-life time of core-shell nanowire structure is estimated to be ˜0.4 ps. The micro-Raman mapping and its corresponding localised spectra for 325 nm excitation exhibit intense E2 (high) phonon mode of GaN shell at 573 cm-1 as the decrease of laser interaction length and the signal intensity is quenched at the voids due to high spacing of NWs.
Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111 substrate

Directory of Open Access Journals (Sweden)

P. Sangeetha

2013-06-01

Full Text Available The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE on Si (111 substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E2 (high and A1 (LO phonon mode of InN core at 490 and 590 cm−1 respectively and E2 (high phonon mode of GaN shell at 573 cm−1. The free carrier concentration of InN core is found to be low in the order ∼ 1016 cm−3 due to the screening of charge carriers by thin GaN shell. Diameter of InN core evaluated using the spatial correlation model is consistent with the transmission electron microscopic measurement of ∼15 nm. The phonon-life time of core-shell nanowire structure is estimated to be ∼0.4 ps. The micro-Raman mapping and its corresponding localised spectra for 325 nm excitation exhibit intense E2 (high phonon mode of GaN shell at 573 cm−1 as the decrease of laser interaction length and the signal intensity is quenched at the voids due to high spacing of NWs.
Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

International Nuclear Information System (INIS)

Sangeetha, P.; Ramakrishnan, V.; Jeganathan, K.

2013-01-01

The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE) on Si (111) substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E 2 (high) and A 1 (LO) phonon mode of InN core at 490 and 590 cm −1 respectively and E 2 (high) phonon mode of GaN shell at 573 cm −1 . The free carrier concentration of InN core is found to be low in the order ∼ 10 16 cm −3 due to the screening of charge carriers by thin GaN shell. Diameter of InN core evaluated using the spatial correlation model is consistent with the transmission electron microscopic measurement of ∼15 nm. The phonon-life time of core-shell nanowire structure is estimated to be ∼0.4 ps. The micro-Raman mapping and its corresponding localised spectra for 325 nm excitation exhibit intense E 2 (high) phonon mode of GaN shell at 573 cm −1 as the decrease of laser interaction length and the signal intensity is quenched at the voids due to high spacing of NWs.
Ion beam processes in Si

International Nuclear Information System (INIS)

Holland, O.W.; Narayan, J.; Fathy, D.

1984-07-01

Observation of the effects of implants of energetic ions at high dose rates into Si have produced some exciting and interesting results. The mechanism whereby displacement damage produced by ions self-anneals during high dose rate implantation is discussed. It is shown that ion beam annealing (IBA) offers in certain situations unique possibilities for damage annealing. Annealing results of the near surface in Si with a buried oxide layer, formed by high dose implantation, are presented in order to illustrate the advantages offered by IBA. It is also shown that ion irradiation can stimulate the epitaxial recrystallization of amorphous overlayers in Si. The nonequilibrium alloying which results from such epitaxial processes is discussed as well as mechanisms which limit the solid solubility during irradiation. Finally, a dose rate dependency for the production of stable damage by ion irradiation at a constant fluence has been observed. For low fluence implants, the amount of damage is substantially greater in the case of high flux rather than low flux implantation
Thermal Conductivity and High-Frequency Dielectric Properties of Pressureless Sintered SiC-AlN Multiphase Ceramics

Directory of Open Access Journals (Sweden)

Jialin Gu

2018-06-01

Full Text Available SiC-AlN multiphase ceramics with 10 wt. %Y2O3-BaO-SiO2 additives were fabricated by pressureless sintering in a nitrogen atmosphere. The effects of SiC contents and sintering temperatures on the sinterability, microstructure, thermal conductivity and high-frequency dielectric properties were characterized. In addition to 6H-SiC and AlN, the samples also contained Y3Al5O12 and Y4Al2O9. SiC-AlN ceramics sintered with 50 wt. % SiC at 2173 K exhibited the best thermal diffusivity and thermal conductivity (26.21 mm2·s−1 and 61.02 W·m−1·K−1, respectively. The dielectric constant and dielectric loss of the sample sintered with 50 wt. % SiC and 2123 K were 33–37 and 0.4–0.5 at 12.4–18 GHz. The dielectric constant and dielectric loss of the samples decreased as the frequency of electromagnetic waves increased from 12.4–18 GHz. The dielectric thermal conductivity properties of the SiC-AlN samples are discussed.
Fe{sub 3}O{sub 4}@SiO{sub 2}–SO{sub 3}H@PPy@Au spheres: Fabrication, characterization and application in SERS

Energy Technology Data Exchange (ETDEWEB)

Ren, Guohong; Shang, Mengying; Zou, Hanzhi; Wang, Wenqin, E-mail: wangwenqin@nbu.edu.cn

2016-04-15

In this work, the sulfonic acid (–SO{sub 3}H) group terminated Fe{sub 3}O{sub 4}@SiO{sub 2} magnetic spheres were prepared. Polypyrrole (PPy) was in-situ polymerized on Fe{sub 3}O{sub 4}@SiO{sub 2}–SO{sub 3}H spheres due to the dual roles of the –SO{sub 3}H groups: acting as both “anchoring sites” for adsorbing of pyrrole monomer and dopant agent in PPy. By adsorbing gold nanoseeds on the as-prepared Fe{sub 3}O{sub 4}@SiO{sub 2}–SO{sub 3}H@PPy spheres followed the seed-mediated growth method, the multifunctional Fe{sub 3}O{sub 4}@SiO{sub 2}–SO{sub 3}H@PPy@Au spheres were obtained. The application of Fe{sub 3}O{sub 4}@SiO{sub 2}–SO{sub 3}H@PPy@Au spheres in surface-enhanced Raman scattering (SERS) was investigated, and the results exhibited the enhancement in the order of 10{sup 4} using 4-aminothiophenol as the probe molecule. - Highlights: • The sulfonic acid-terminated Fe{sub 3}O{sub 4}@SiO{sub 2} (Fe{sub 3}O{sub 4}@SiO{sub 2}–SO{sub 3}H) spheres were prepared. • The –SO{sub 3}H groups of Fe{sub 3}O{sub 4}@SiO{sub 2}–SO{sub 3}H spheres played dual roles in adsorbing pyrrole and protonating polypyrrole. • Fe{sub 3}O{sub 4}@SiO{sub 2}–SO{sub 3}H@PPy core/gold shell composites can act as SERS substrate for detecting 4-ATP molecule.
Energy and time of flight measurements of REX-ISOLDE stable beams using Si detectors

CERN Document Server

Cantero, E D; Fraser, M A; Lanaia, D; Sosa, A; Voulot, D; Zocca, F

2014-01-01

In this paper we present energy and time spectroscopy measurements for the stable beams of REX-ISOLDE obtained using Si detectors. By using an alpha source as a calibration reference, the absolute energy E of stable beam particles (A/q = 4) was determined in spectroscopy mode in the energy range 1 MeV < E < 8 MeV (0.30 MeV/u < E/A < 1.87 MeV/u). The time of flight of the beam particles (2.18 MeV/u < E/A < 2.27 MeV/u) was determined by installing identical Si detectors in two diagnostic boxes separated by 7.7 m. The results obtained with these two techniques are compared with the values obtained by dipole scans using a bending magnet. The measurements took place between January and February of 2013.
Electron-beam-induced structure transformation of the quasicrystalline phases of the Al 62Cu 20Co 15Si 3 alloy

Science.gov (United States)

Reyes-Gasga, J.; R. Garcia, G.; Jose-Yacaman, M.

1995-02-01

Some details on the phase transformation experienced by the quasicrystalline phases of the Al 62Cu 20Co 15Si 3 alloy under a 400 kV electron beam are given. The transition is observed in situ with a high resolution electron microscope and recorded on video tape. The results show that the electron beam radiation produces a sequence of changes similar to the ones observed in an ion-beam-induced amorphization process. Considering electron radiation damage analysis, the results agree well with the "flip-flop" model [Coddens, Bellisent, Calvayrac and Ambroise (1991) Europhys. Lett.16, 271] where the transition from a quasicrystalline phase to a crystalline phase is produced by atomic displacements but not in a cascade way.
Experimental investigation of slow-positron emission from 4H-SiC and 6H-SiC surfaces

International Nuclear Information System (INIS)

Ling, C.C.; Beling, C.D.; Fung, S.; Weng, H.M.

2002-01-01

Slow-positron emission from the surfaces of as-grown n-type 4H-SiC and 6H-SiC (silicon carbide) with a conversion efficiency of ∼10 -4 has been observed. After 30 min of 1000 deg. C annealing in forming gas, the conversion efficiency of the n-type 6H-SiC sample was observed to be enhanced by 75% to 1.9x10 -4 , but it then dropped to ∼10 -5 upon a further 30 min annealing at 1400 deg. C. The positron work function of the n-type 6H-SiC was found to increase by 29% upon 1000 deg. C annealing. For both p-type 4H-SiC and p-type 6H-SiC materials, the conversion efficiency was of the order of ∼10 -5 , some ten times lower than that for the n-type materials. This was attributed to the band bending at the p-type material surface which caused positrons to drift away from the positron emitting surface. (author)
Forbidden energy band gap in diluted a-Ge{sub 1-x}Si{sub x}:N films

Energy Technology Data Exchange (ETDEWEB)

Guarneros, C.; Rebollo-Plata, B. [Posgrado en Fisica Aplicada, Facultad de Ciencias Fisico-Matematicas, Benemerita Universidad Autonoma de Puebla, Blvd. 14 Sur 6301, Col. San Manuel, 72570, Puebla (Mexico); Lozada-Morales, R., E-mail: rlozada@fcfm.buap.mx [Posgrado en Fisica Aplicada, Facultad de Ciencias Fisico-Matematicas, Benemerita Universidad Autonoma de Puebla, Blvd. 14 Sur 6301, Col. San Manuel, 72570, Puebla (Mexico); Espinosa-Rosales, J.E. [Posgrado en Fisica Aplicada, Facultad de Ciencias Fisico-Matematicas, Benemerita Universidad Autonoma de Puebla, Blvd. 14 Sur 6301, Col. San Manuel, 72570, Puebla (Mexico); Portillo-Moreno, J. [Facultad de Ciencias Quimicas, Benemerita Universidad Autonoma de Puebla, Blvd. 14 Sur 6301, Col. San Manuel, 72570, Puebla (Mexico); Zelaya-Angel, O. [Departamento de Fisica, Centro de Investigacion y de Estudios Avanzados del IPN, PO Box 14-740, Mexico 07360 D.F. (Mexico)

2012-06-01

By means of electron gun evaporation Ge{sub 1-x}Si{sub x}:N thin films, in the entire range 0 {<=} x {<=} 1, were prepared on Si (100) and glass substrates. The initial vacuum reached was 6.6 Multiplication-Sign 10{sup -4} Pa, then a pressure of 2.7 Multiplication-Sign 10{sup -2} Pa of high purity N{sub 2} was introduced into the chamber. The deposition time was 4 min. Crucible-substrate distance was 18 cm. X-ray diffraction patterns indicate that all the films were amorphous (a-Ge{sub 1-x}Si{sub x}:N). The nitrogen concentration was of the order of 1 at% for all the films. From optical absorption spectra data and by using the Tauc method the energy band gap (E{sub g}) was calculated. The Raman spectra only reveal the presence of Si-Si, Ge-Ge, and Si-Ge bonds. Nevertheless, infrared spectra demonstrate the existence of Si-N and Ge-N bonds. The forbidden energy band gap (E{sub g}) as a function of x in the entire range 0 {<=} x {<=} 1 shows two well defined regions: 0 {<=} x {<=} 0.67 and 0.67 {<=} x {<=} 1, due to two different behaviors of the band gap, where for x > 0.67 exists an abruptly change of E{sub g}(x). In this case E{sub g}(x) versus x is different to the variation of E{sub g} in a-Ge{sub 1-x}Si{sub x} and a-Ge{sub 1-x}Si{sub x}:H. This fact can be related to the formation of Ge{sub 3}N{sub 4} and GeSi{sub 2}N{sub 4} when x {<=} 0.67, and to the formation of Si{sub 3}N{sub 4} and GeSi{sub 2}N{sub 4} for 0.67 {<=} x. - Highlights: Black-Right-Pointing-Pointer Nitrogen doped amorphous Ge{sub 1-x}Si{sub x} thin films are grown by electron gun technique. Black-Right-Pointing-Pointer Nitrogen atoms on E{sub g} of the a-Ge{sub 1-x}Si{sub x} films in the 0 Pound-Sign x Pound-Sign 1 range are analyzed. Black-Right-Pointing-Pointer Variation in 0 Pound-Sign x Pound-Sign 1 range shows a warped change of E{sub g} in 1.0 - 3.6 eV range. Black-Right-Pointing-Pointer The change in E{sub g}(x) behavior when x {approx} 0.67 was associated with Ge{sub 2}SiN{sub 4
Influence of LaSiOx passivation interlayer on band alignment between PEALD-Al2O3 and 4H-SiC determined by X-ray photoelectron spectroscopy

Science.gov (United States)

Wang, Qian; Cheng, Xinhong; Zheng, Li; Shen, Lingyan; Zhang, Dongliang; Gu, Ziyue; Qian, Ru; Cao, Duo; Yu, Yuehui

2018-01-01

The influence of lanthanum silicate (LaSiOx) passivation interlayer on the band alignment between plasma enhanced atomic layer deposition (PEALD)-Al2O3 films and 4H-SiC was investigated by high resolution X-ray photoelectron spectroscopy (XPS). An ultrathin in situ LaSiOx interfacial passivation layer (IPL) was introduced between the Al2O3 gate dielectric and the 4H-SiC substrate to enhance the interfacial characteristics. The valence band offset (VBO) and corresponding conduction band offset (CBO) for the Al2O3/4H-SiC interface without any passivation were extracted to be 2.16 eV and 1.49 eV, respectively. With a LaSiOx IPL, a VBO of 1.79 eV and a CBO of 1.86 eV could be obtained across the Al2O3/4H-SiC interface. The difference in the band alignments was dominated by the band bending or band shift in the 4H-SiC substrate as a result of different interfacial layers (ILs) formed at the interface. This understanding of the physical details of the band alignment could be a good foundation for Al2O3/LaSiOx/4H-SiC heterojunctions applied in the 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs).
Compatibility of hydrogarnet, Ca3Al2(SiO4)x(OH)4(3−x), with sulfate and carbonate-bearing cement phases: 5–85 °C

International Nuclear Information System (INIS)

Okoronkwo, Monday Uchenna; Glasser, Fredrik Paul

2016-01-01

The stable existence of hydrogarnet in Portland cement compositions cured at temperatures below 55 °C has long been predicted from application of equilibrium thermodynamics. However hydrogarnet is not often reported in hydrated commercial Portland cements. The substitutions (SO 4 –CO 3 –OH) in AFm have previously been shown to stabilise AFm to higher temperatures and raise the temperature at which AFm converts to Si-free hydrogarnet, C 3 AH 6 . But unanswered question remains about the compatibility of AFm and AFm solid solutions with Si-substituted hydrogarnet, Ca 3 Al 2 (SiO 4 ) x (OH) 4(3 − x) . Phase relations of C 3 AH 6 and Ca 3 Al 2 (SiO 4 ) x (OH) 4(3 − x) at sulfate and carbonate activities conditioned respectively by (gypsum and SO 4 -AFt) and (calcite and CO 3 -AFt) have been determined experimentally in the range 5–85 °C. The results confirm the instability of Si-free hydrogarnet with carbonate and sulfate-bearing cement phases, but do indicate that a range of silica-substituted hydrogarnet solid solutions are stable under conditions likely to be encountered in blended cement systems.
Study of epitaxial lateral overgrowth of semipolar (1 1 − 2 2) GaN by using different SiO2 pattern sizes

International Nuclear Information System (INIS)

Song, Ki-Ryong; Lee, Jae-Hwan; Han, Sang-Hyun; Yi, Hye-Rin; Lee, Sung-Nam

2013-01-01

Graphical abstract: - Highlights: • We examine comparative studies of semipolar ELO-GaN film. • Semipolar ELO-GaN film was grown by three step growth method. • The achievement of smooth surface morphology of semipolar ELO-GaN. • The crystal and optical properties was significantly improved by ELO process. - Abstract: We investigated the growth mode and the crystal properties of lateral epitaxial overgrowth (LEO) semipolar (1 1 − 2 2) GaN by using the various SiO 2 pattern sizes of 6, 8, 10 and 12 μm with the window width of 4.0 μm. By using three-step growth technique, we successfully obtained the fully-coalescenced semipolar (1 1 − 2 2) LEO-GaN films regardless of the SiO 2 pattern sizes. However, the coalescence thickness of LEO-GaN film was decreased with decreasing SiO 2 pattern size, indicating that the coalescence of semipolar (1 1 − 2 2) GaN was easily formed by decreasing the pattern size of SiO 2 mask. The full width at half maximums (FWHMs) of X-ray rocking curves (XRCs) of LEO-GaN films decreased with increasing SiO 2 pattern size. In the pattern size of 4 × 10 μm, we achieved the minimum XRCs FWHM of 537 and 368 arc s with two different X-ray incident beam directions of [1 1 − 2 − 3] and [1 − 1 0 0], respectively. Moreover, the photoluminescence bandedge emission of semipolar (1 1 − 2 2) GaN was 45 times increased by LEO process. Based on these results, we concluded that the LEO pattern size of 4 × 10 μm would effectively decrease crystal defects of semipolar (1 1 − 2 2) GaN epilayer, resulting in an improvement of the optical properties
Photoluminescence studies of cubic phase GaN grown by molecular beam epitaxy on (001) silicon covered with SiC layer

International Nuclear Information System (INIS)

Godlewski, M.; Ivanov, V.Yu.; Bergman, J.P.; Monemar, B.; Barski, A.; Langer, R.

1997-01-01

In this work we evaluate optical properties of cubic phase GaN epilayers grown on top of (001) silicon substrate prepared by new process. Prior to the growth Si substrate was annealed at 1300-1400 o C in propane. The so-prepared substrate is covered within a thin (∼ 4 nm) SiC wafer, which allowed a successful growth of good morphological quality cubic phase GaN epilayers. The present results confirm recent suggestion on smaller ionization energies of acceptors in cubic phase GaN epilayers. (author)

Production of Al2O3–SiC nano-composites by spark plasma sintering; Producción de nano-composites – SiC–Al2O3 por spark plasma sinterizado

Energy Technology Data Exchange (ETDEWEB)

Mansour Razavi; Ali Reza Farajipour; Mohammad Zakeri; Mohammad Reza Rahimipour; Ali Reza Firouzbakht

2017-11-01

In this paper, Al2O3–SiC composites were produced by SPS at temperatures of 1600°C for 10min under vacuum atmosphere. For preparing samples, Al2O3 with the second phase including of micro and nano-sized SiC powder were milled for 5h. The milled powders were sintered in a SPS machine. After sintering process, phase studies, densification and mechanical properties of Al2O3–SiC composites were examined. Results showed that the specimens containing micro-sized SiC have an important effect on bulk density, hardness and strength. The highest relative density, hardness and strength were 99.7%, 324.6 HV and 2329MPa, respectively, in Al2O3–20wt% SiCmicro composite. Due to short time sintering, the growth was limited and grains still remained in nano-meter scale. [Spanish] En este trabajo se muestran compuestos de Al2O3-SiC producidos por SPS, en vacío, a 1.600 °C durante 10 min. Para la preparación de muestras, se molieron polvos de Al2O3 durante 5 h con la segunda fase de micro-y-nano polvo de SiC. Posteriormente, estos polvos molidos se sinterizaron mediante SPS. Después del proceso de sinterización, se realizaron estudios de fase, densificación y propiedades mecánicas de los compuestos de Al2O3-SiC obtenidos. Los resultados mostraron que micro-SiC en las muestras tiene un efecto importante en su densidad aparente, dureza y resistencia. La mayor densidad relativa, dureza y resistencia fueron respectivamente del 99,7%, 324,6 HV y 2.329 MPa para Al2O3 con un 20% en peso micro-SiC. Debido al corto tiempo de sinterización, el crecimiento los granos fue limitado y se mantuvieron en escala nanométrica.
Ba{sub 1.63}La{sub 7.39}Si{sub 11}N{sub 23}Cl{sub 0.42}:Ce{sup 3+} - a nitridosilicate chloride with a zeolite-like structure

Energy Technology Data Exchange (ETDEWEB)

Schultz, Peter; Oeckler, Oliver [Institute of Mineralogy, Crystallography and Materials Science, Faculty of Chemistry and Mineralogy, Leipzig University, Scharnhorststrasse 20, 04275 Leipzig (Germany); Durach, Dajana; Schnick, Wolfgang [Department of Chemistry, University of Munich (LMU), Butenandtstrasse 5-13, 81377 Munich (Germany)

2016-05-15

The nitridosilicate chloride Ba{sub 1.63}La{sub 7.39}Si{sub 11}N{sub 23}Cl{sub 0.42}:Ce{sup 3+} was synthesized by metathesis reaction starting from LaCl{sub 3}, BaH{sub 2}, CeF{sub 3} and the product of the ammonolysis of Si{sub 2}Cl{sub 6}. The title compound is stable towards air and moisture. Diffraction data of a microcrystal were recorded using microfocused synchrotron radiation. X-ray spectroscopy confirms the chemical composition of the crystal. IR spectra corroborate absence of N-H bonds. The compound is homeotypic to Ba{sub 2}Nd{sub 7}Si{sub 11}N{sub 23} and crystallizes in space group Cmmm with a = 11.009(3), b = 23.243(8), c = 9.706(4) Aa and Z = 4, R{sub 1}(all) = 0.0174. According to bond valence sum calculations, some crystallographic positions show complete occupancy by Ba or La whereas others contain significant amounts of both elements. In contrast to the structure prototype Ba{sub 2}Nd{sub 7}Si{sub 11}N{sub 23}, Ba{sub 1.63}La{sub 7.39}Si{sub 11}N{sub 23}Cl{sub 0.42}:Ce{sup 3+} contains chloride ions in channels of the SiN{sub 4} tetrahedra network, hinting at various substitution possibilities of the complex zeolite-like structure. (Copyright copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Surface passivation by Al2O3 and a-SiNx: H films deposited on wet-chemically conditioned Si surfaces

NARCIS (Netherlands)

Bordihn, S.; Mertens, V.; Engelhart, P.; Kersten, K.; Mandoc, M.M.; Müller, J.W.; Kessels, W.M.M.

2012-01-01

The surface passivation of p- and n-type silicon by different chemically grown SiO2 films (prepared by HNO3, H2SO4/H2O2 and HCl/H2O2 treatments) was investigated after PECVD of a-SiNx:H and ALD of Al2O3 capping films. The wet chemically grown SiO2 films were compared to thermally grown SiO2 and the
Formation of InN atomic-size wires by simple N adsorption on the In/Si(111)–(4 × 1) surface

International Nuclear Information System (INIS)

Guerrero-Sánchez, J.; Takeuchi, Noboru

2016-01-01

Highlights: • N atoms on the surface form bonds with two In atoms and one Si atom. • Surface formation energy calculations show two stable structures with formation of InN atomic-size wires. • Projected density of states shows a tendency to form In−N and Si−N bonds on the surface. • Charge density corroborates the covalent character of the In−N bonds. - Abstract: We have carried out first principles total energy calculations to study the formation of InN atomic-size wires on the In/Si(111)–(4 × 1) surface. In its most favorable adsorption site, a single N atom forms InN arrangements. The deposit of 0.25 monolayers (MLs) of N atoms, result in the breaking of one of the original In chains and the formation of an InN atomic size wire. Increasing the coverage up to 0.5 ML of N atoms results in the formation of two of those wires. Calculated surface formation energies show that for N-poor conditions the most stable configuration is the original In/Si(111)–(4 × 1) surface with no N atoms. Increasing the N content, and in a reduced range of chemical potential, the formation of an InN wire is energetically favorable. Instead, from intermediate to N-rich conditions, two InN atomic wires are more stable. Projected density of states calculations have shown a trend to form covalent bonds between the In−p and N−p orbitals in these stable models.
AlGaN/GaN-based HEMT on SiC substrate for microwave ...

Indian Academy of Sciences (India)

strength and good thermal stability [1–8]. Apart from this ... In this work, we have considered. Si3N4 and ... of the maximum power by a factor of 3 [12,13]. According ... of the passivation layer might influence device performance [13]. This type of ...
Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

Energy Technology Data Exchange (ETDEWEB)

Sun, Rui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Makise, Kazumasa; Terai, Hirotaka [Advanced ICT Research Institute, National Institute of Information and Communications Technology (Japan); Zhang, Lu [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Wang, Zhen, E-mail: zwang@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Shanghai Tech University, Shanghai 201210 (China)

2016-06-15

We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100) substrates with a TiN buffer layer. A 50-nm-thick (200)-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large I{sub c}R{sub N} product of 3.8 mV, a sharp quasiparticle current rise with a ΔV{sub g} of 0.4 mV, and a small subgap leakage current. The junction quality factor R{sub sg}/R{sub N} was about 23 for the junction with a J{sub c} of 47 A/cm{sup 2} and was about 6 for the junction with a J{sub c} of 3.0 kA/cm{sup 2}. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200)-orientated TiN buffer layer and had a highly crystalline structure with the (200) orientation.
Synthesis and tunable luminescent properties of Eu-doped Ca2NaSiO4F – Coexistence of the Eu2+ and Eu3+ centers

Directory of Open Access Journals (Sweden)

Mubiao Xie

Full Text Available Novel phosphors Ca2NaSiO4F:Eu were synthesized successfully by the conventional solid-state method in CO atmosphere, and their spectroscopic properties in UV−vis region were investigated. The photoluminescence properties show that Eu3+ ions were partially reduced to Eu2+ in Ca2NaSiO4F. As a result of radiation and re-absorption energy transfer from Eu2+ to Eu3+, both Eu2+ bluish-green emission at around 520 nm and Eu3+ red emission are observed in the emission spectra under the n-UV light excitation. Furthermore, the ratio between Eu2+ and Eu3+ emissions varies with increasing content of overall Eu. Because relative intensity of the red component from Eu3+ became systematically stronger, white light emission can be realized by combining the emission of Eu2+ and Eu3+ in a single host lattice under n-UV light excitation. These results indicate that the Ca2NaSiO4F:Eu phosphors have potential applications as a n-UV convertible phosphor for light-emitting diodes. Keywords: Phosphors, Luminescence, White LED, Optical materials
Reactively sputtered Ti-Si-N films for application as heating layers for low-current phase-change memory

International Nuclear Information System (INIS)

Yin, You; Noguchi, Tomoyuki; Ota, Kazuhiro; Higano, Naoya; Sone, Hayato; Hosaka, Sumio

2009-01-01

In this study, we investigate the properties of Ti-Si-N films for the application as the heating layers in phase-change memory (PCM). The experimental results show that the resistivity of Ti-Si-N films can be varied by over six orders of magnitude from 2.18 x 10 4 to 3.9x10 2 Ω-cm by increasing the flow rate ratio [N 2 /(N 2 +Ar)] from 0 to 10%. The controllability of resistivity might result from the concentration change from Ti-Si to mixture of TiN and Si 3 N 4 . Reversible switching was also successfully demonstrated by using a lateral PCM with these heating layers. The stability of the Ti-Si-N films at high temperatures implies that they can be used as the heating layers in the conventional vertical PCMs for current reduction.
Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

Directory of Open Access Journals (Sweden)

Rui Sun

2016-06-01

Full Text Available We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100 substrates with a TiN buffer layer. A 50-nm-thick (200-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large IcRN product of 3.8 mV, a sharp quasiparticle current rise with a ΔVg of 0.4 mV, and a small subgap leakage current. The junction quality factor Rsg/RN was about 23 for the junction with a Jc of 47 A/cm2 and was about 6 for the junction with a Jc of 3.0 kA/cm2. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200-orientated TiN buffer layer and had a highly crystalline structure with the (200 orientation.
A ROIC for Mn(TPP)Cl-DOP-THF-Polyhema PVC membrane modified n-channel Si3N4 ISFET sensitive to histamine.

Science.gov (United States)

Samah, N L M A; Lee, Khuan Y; Sulaiman, S A; Jarmin, R

2017-07-01

Intolerance of histamine could lead to scombroid poisoning with fatal consequences. Current detection methods for histamine are wet laboratory techniques which employ expensive equipment that depends on skills of seasoned technicians and produces delayed test analysis result. Previous works from our group has established that ISFETs can be adapted for detecting histamine with the use of a novel membrane. However, work to integrate ISFETs with a readout interfacing circuit (ROIC) circuit to display the histamine concentration has not been reported so far. This paper concerns the development of a ROIC specifically to integrate with a Mn(TPP)Cl-DOP-THF-Polyhema PVC membrane modified n-channel Si3N4 ISFET to display the histamine concentration. It embodies the design of constant voltage constant current (CVCC) circuit, amplification circuit and micro-controller based display circuit. A DC millivolt source is used to substitute the membrane modified ISFET as preliminary work. Input is histamine concentration corresponding to the safety level designated by the Food and Drugs Administration (FDA). Results show the CVCC circuit makes the output follows the input and keeps VDS constant. The amplification circuit amplifies the output from the CVCC circuit to the range 2.406-4.888V to integrate with the microcontroller, which is programmed to classify and display the histamine safety level and its corresponding voltage on a LCD panel. The ROIC could be used to produce direct output voltages corresponding to histamine concentrations, for in-situ applications.
Self-aligned indium–gallium–zinc oxide thin-film transistors with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers

Energy Technology Data Exchange (ETDEWEB)

Chen, Rongsheng, E-mail: rschen@ust.hk; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

2014-08-01

Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm{sup 2}/Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10{sup 6}. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress.
Ion beam sputter deposited TiAlN films for metal-insulator-metal (Ba,Sr)TiO3 capacitor application

International Nuclear Information System (INIS)

Lee, S.-Y.; Wang, S.-C.; Chen, J.-S.; Huang, J.-L.

2008-01-01

The present study evaluated the feasibility of TiAlN films deposited using the ion beam sputter deposition (IBSD) method for metal-insulator-metal (MIM) (Ba,Sr)TiO 3 (BST) capacitors. The BST films were crystallized at temperatures above 650 deg. C. TiAlN films deposited using the IBSD method were found having smooth surface and low electrical resistivity at high temperature conditions. TiAlN films showed a good diffusion barrier property against BST components. The J-E (current density-electric field) characteristics of Al/BST/TiAlN capacitors were good, with a high break down electric field of ± 2.5 MV/cm and a leakage current density of about 1 x 10 -5 A/cm 2 at an applied field of ± 0.5 MV/cm. Thermal stress and lateral oxidation that occurred at the interface damaged the capacitor stacking structure. Macro holes that dispersed on the films resulted in higher leakage current and inconsistent J-E characteristics. Vacuum annealing with lower heating rate and furnace cooling, and a Ti-Al adhesion layer between TiAlN and the SiO 2 /Si substrate can effectively minimize the stress effect. TiAlN film deposited using IBSD can be considered as a potential electrode and diffusion barrier material for MIM BST capacitors
Trap suppression by isoelectronic In or Sb doping in Si-doped n-GaAs grown by molecular-beam epitaxy

International Nuclear Information System (INIS)

Li, A.Z.; Kim, H.K.; Jeong, J.C.; Wong, D.; Schlesinger, T.E.; Milnes, A.G.

1988-01-01

The effects of isoelectronic doping of GaAs by In or Sb on the electron deep levels in n-GaAs grown by molecular-beam epitaxy have been investigated in the growth temperature range 500--600 0 C for Si doping levels of 4--7 x 10 16 cm -3 and As-stabilized conditions. The two dominant traps M3 and M6 are drastically reduced in concentration by up to three orders of magnitude for M3 (from 10 15 cm -3 down to 12 cm -3 ) and two and a half orders of magnitude for M6 by introducing 0.2--1 at.% In or Sb and increasing growth temperatures from 500 to 550 0 C. The trap concentrations of M3 and M6 were also significantly reduced by increasing the growth temperature to 600 0 C without In or Sb doping and by decreasing the growth rate from 1.0 to 0.3 μm/h. The incorporation coefficients of In and Sb have been measured and are found to decrease with increasing growth temperature. The growths with high M3 and M6 trap densities are shown to have short minority-carrier diffusion lengths. Indium isoelectronic doping, which is presumed to take place on a gallium sublattice site, and Sb doping, which is expected to take place on an arsenic sublattice site, appear to have rather similar effects in suppressing the concentration of the M3 and M6 electron traps. This suggest that both of these traps are in some way related to (V/sub As/V/sub Ga/) complexes or (V/sub As/XV/sub Ga/) complexes where X is different for M3 and M6 and might be interstitial or impurity related
Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

Energy Technology Data Exchange (ETDEWEB)

Romero, M F; Sanz, M M; Munoz, E [ISOM-Universidad Politecnica de Madrid (UPM). ETSIT, Madrid (Spain); Tanarro, I [Instituto de Estructura de la Materia, CSIC, Madrid (Spain); Jimenez, A, E-mail: itanarro@iem.cfmac.csic.e [Departamento Electronica, Escuela Politecnica Superior, Universidad de Alcala, Alcala de Henares, Madrid (Spain)

2010-12-15

In this work, silicon nitride thin films have been deposited by plasma enhanced chemical vapour deposition on both silicon samples and AlGaN/GaN high electron mobility transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH{sub 4} and NH{sub 3} precursors and the formation of H{sub 2} and N{sub 2} have been analysed by mass spectrometry as a function of the NH{sub 3}/SiH{sub 4} flow ratio and the RF power applied to the plasma reactor. Afterwards, the properties of the films and the HEMT electrical characteristics have been studied. Plasma composition has been correlated with the SiN deposition rate, refractive index, H content and the final electric characteristics of the passivated transistors.
Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

Science.gov (United States)

van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

2017-06-01

Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.
Facile and efficient synthesis of the surface tantalum hydride (≡SiO)2TaIIIH and tris-siloxy tantalum (≡SiO)3TaIII starting from novel tantalum surface species (≡SiO)TaMe4 and (≡SiO)2TaMe 3

KAUST Repository

Chen, Yin

2014-03-10

By grafting of TaMe5 (1) on the surface of silica partially dehydroxylated at 500 C (silica500), a mixture of (≡SiO)TaMe4 (2a; major, 65 ± 5%) and (≡SiO) 2TaMe3 (2b; minor, 35 ± 5%) was produced, which has been characterized by microanalysis, IR, and SS NMR (1H, 13C, 1H-13C HETCOR, proton double and triple quantum). After grafting, these surface organometallic compounds are more stable than the precursor TaMe5. Treatment of 2a,b with water and H 2 resulted in the formation of methane in amount of 3.6 ± 0.2 and 3.4 ± 0.2 mol/grafted Ta, respectively. 2a,b react with H2 (800 mbar) to form (≡SiO)2TaH. After (≡SiO) 2TaH was heated to 500 C under hydrogen or vacuum, [(≡SiO) 3Ta][≡SiH] was produced, and the structure was confirmed by IR, NMR, and EXAFS. Considering the difficulty of the previous preparation method, these syntheses represent a facile and convenient way to prepare tantalum surface species (≡SiO)2TaH and (≡SiO)3Ta via the intermediate of the new surface organometallic precursors: (≡SiO)TaMe4/(≡SiO)2TaMe3. (≡SiO)2TaH and (≡SiO)3Ta exhibit equal reactivities in alkane metathesis and ethylene polymerization in comparison to those in previous reports. © 2014 American Chemical Society.
Facile and efficient synthesis of the surface tantalum hydride (≡SiO)2TaIIIH and tris-siloxy tantalum (≡SiO)3TaIII starting from novel tantalum surface species (≡SiO)TaMe4 and (≡SiO)2TaMe 3

KAUST Repository

Chen, Yin; Ould-Chikh, Samy; Abou-Hamad, Edy; Callens, Emmanuel; Mohandas, Janet Chakkamadathil; Khalid, Syed M.; Basset, Jean-Marie

2014-01-01

By grafting of TaMe5 (1) on the surface of silica partially dehydroxylated at 500 C (silica500), a mixture of (≡SiO)TaMe4 (2a; major, 65 ± 5%) and (≡SiO) 2TaMe3 (2b; minor, 35 ± 5%) was produced, which has been characterized by microanalysis, IR, and SS NMR (1H, 13C, 1H-13C HETCOR, proton double and triple quantum). After grafting, these surface organometallic compounds are more stable than the precursor TaMe5. Treatment of 2a,b with water and H 2 resulted in the formation of methane in amount of 3.6 ± 0.2 and 3.4 ± 0.2 mol/grafted Ta, respectively. 2a,b react with H2 (800 mbar) to form (≡SiO)2TaH. After (≡SiO) 2TaH was heated to 500 C under hydrogen or vacuum, [(≡SiO) 3Ta][≡SiH] was produced, and the structure was confirmed by IR, NMR, and EXAFS. Considering the difficulty of the previous preparation method, these syntheses represent a facile and convenient way to prepare tantalum surface species (≡SiO)2TaH and (≡SiO)3Ta via the intermediate of the new surface organometallic precursors: (≡SiO)TaMe4/(≡SiO)2TaMe3. (≡SiO)2TaH and (≡SiO)3Ta exhibit equal reactivities in alkane metathesis and ethylene polymerization in comparison to those in previous reports. © 2014 American Chemical Society.
Photon counting with a FDIRC Cherenkov prototype readout by SiPM arrays

Energy Technology Data Exchange (ETDEWEB)

Marrocchesi, P.S., E-mail: marrocchesi@pi.infn.it [Department of Physical Sciences, Earth and Environment, Via Roma 56, I-53100 Siena (Italy); INFN Sezione di Pisa, Largo Bruno Pontecorvo 3, I-56127 Pisa (Italy); Bagliesi, M.G. [Department of Physical Sciences, Earth and Environment, Via Roma 56, I-53100 Siena (Italy); Basti, A. [Department of Physics, University of Pisa, Largo Bruno Pontecorvo 3, I-56127 Pisa (Italy); INFN Sezione di Pisa, Largo Bruno Pontecorvo 3, I-56127 Pisa (Italy); Bigongiari, G.; Bonechi, S.; Brogi, P. [Department of Physical Sciences, Earth and Environment, Via Roma 56, I-53100 Siena (Italy); INFN Sezione di Pisa, Largo Bruno Pontecorvo 3, I-56127 Pisa (Italy); Checchia, C.; Collazuol, G. [Department of Physics and Astronomy, University of Padova, Padova, Italy, and INFN-Padova, 35131 Padova (Italy); Maestro, P. [Department of Physical Sciences, Earth and Environment, Via Roma 56, I-53100 Siena (Italy); INFN Sezione di Pisa, Largo Bruno Pontecorvo 3, I-56127 Pisa (Italy); Morsani, F. [INFN Sezione di Pisa, Largo Bruno Pontecorvo 3, I-56127 Pisa (Italy); Piemonte, C. [Fondazione Bruno Kessler (FBK), I-38122 Trento (Italy); Stolzi, F.; Suh, J.E; Sulaj, A. [Department of Physical Sciences, Earth and Environment, Via Roma 56, I-53100 Siena (Italy); INFN Sezione di Pisa, Largo Bruno Pontecorvo 3, I-56127 Pisa (Italy)

2017-02-11

A prototype of a Focused Internal Reflection Cherenkov, equipped with 16 arrays of NUV-SiPM, was tested at CERN SPS in March 2015 with beams of relativistic ions at 13, 19 and 30 GeV/n obtained from fragmentation of an Ar primary beam. The detector, designed to identify cosmic nuclei, features a Fused Silica radiator bar optically connected to a cylindrical mirror of the same material and an imaging focal plane of dimensions ∼4 cm×3 cm covered with a total of 1024 SiPM photosensors. Thanks to the outstanding performance of the SiPM arrays, the detector could be operated in photon counting mode as a fully digital device. The Cherenkov pattern was recorded together with the total number of detected photoelectrons increasing as Z{sup 2} as a function of the atomic number Z of the beam particle. In this paper, we report on the characterization and test of the SiPM arrays and the performance of the Cherenkov prototype for the charge identification of the beam particles.
Ca8Mg(SiO4)4Cl2:Ce3+, Tb3+: A potential single-phased phosphor for white-light-emitting diodes

International Nuclear Information System (INIS)

Zhu Ge; Wang Yuhua; Ci Zhipeng; Liu Bitao; Shi Yurong; Xin Shuangyu

2012-01-01

A single-phased white-light-emitting phosphor Ca 8 Mg(SiO 4 ) 4 Cl 2 :Ce 3+ , Tb 3+ (CMSC:Ce 3+ , Tb 3+ ) is synthesized by a high temperature solid-state reaction method, and its photoluminescence properties are investigated. The obtained phosphor exhibits a strong excitation band between 250 and 410 nm, matching well with the dominant emission band of a UV light-emitting-diode (LED) chip. Energy transfer from Ce 3+ to Tb 3+ ions has been investigated and demonstrated to be a resonant type via a dipole–dipole mechanism. The energy transfer efficiency as well as the critical distance is also estimated. Furthermore, the phosphors can generate light from yellow-green through white and eventually to blue by properly tuning the relative ratio of Ce 3+ to Tb 3+ ions grounded on the principle of energy transfer. The results show that this phosphor has potential applications as a single-phased phosphor for UV white-light LEDs. - Highlights: ► The luminescence properties of Ca 8 Mg(SiO 4 ) 4 Cl 2 :Ce 3+ , Tb 3+ were investigated for the first time. ► The strong absorption of phosphors matches well with the emission band of UV LED chips. ► The energy transfer from Ce 3+ to Tb 3+ in Ca 8 Mg(SiO 4 ) 4 Cl 2 was investigated in detail. ► The white light (CIE=(0.29, 0.34)) is generated by tuning the relative ratio of Ce 3+ to Tb 3+ .
Fabrication of the multilayer beam splitters with large area for soft X-ray laser interferometer

International Nuclear Information System (INIS)

Wang Zhanshan; Zhang Zhong; Wang Fengli; Wu Wenjuan; Wang Hongchang; Qin Shuji; Chen Lingyan

2004-01-01

The soft X-ray laser Mach-Zehnder interferometer is an important tool to measure the electron densities of a laser-produced plasma near the critical surface. The design of a multilayer beam splitter at 13.9 nm for soft X-ray laser Mach-Zehnder interferometer is completed based on the standard of maximizing product of reflectivity and transmission of the beam splitter. The beam splitters which is Mo/Si multilayers on 10 mm x 10 mm area Si 3 N 4 membrane are fabricated using the magnetron sputtering. The figure error of the beam splitter has reached the deep nanometer magnitude by using optical profiler and the product of reflectivity and transmission measured by synchrotron radiation is up to to 4%. (authors)

Structure and stability of M6N8 clusters (M = Si, Ge, Sn, Ti).

Science.gov (United States)

Davydova, Elena I; Timoshkin, Alexey Y; Frenking, Gernot

2010-06-10

The structures and stabilities of the M(6)N(8) clusters (M = Si, Ge, Sn, Ti) have been theoretically studied at DFT and ab initio levels of theory. Two new isomers have been considered: cage-like molecules and propeller-like molecules. It is shown that only for M = Si are both isomers true minima on the potential energy surface. The thermodynamics of the dissociation process (1/6)M(6)N(8) --> (1/3)M(3)N(4) is discussed. For each M(3)N(4) molecule, four structures with different multiplicity are considered. The thermodynamic analysis shows that independently of the multiplicity of M(3)N(4) nitrides all M(6)N(8) clusters are stable in the gas phase in a wide temperature range and could be potential intermediates in chemical vapor deposition of the nitride materials.
A superconducting magnet: Tb2Mo3Si4

International Nuclear Information System (INIS)

Aliev, F.G.; Pryadun, V.V.; Vieira, S.; Villar, R.; Paredes, J.; Levanyuk, A.P.; Yarovets, V.I.

1994-01-01

Measurements of transport properties (resistivity, Seebeck coefficient, thermal conductivity), thermal expansion, heat capacity and magnetic susceptibility of Tb 2 Mo 3 Si 4 samples with different annealing conditions show that in this superconductor (with T c between 0.5 and 1.2 K) a complex magnetic structure exists in the normal state, characterized by transitions at 2.3 K and 19 K. The expected magnetic structures are discussed taking into account the absence of experimental evidence of spontaneous magnetization and the possibility of an antiferromagnetic-structure formation without change of translational geometry. (orig.)
Electron density distribution and disordered crystal structure of 8H-SiAlON, Si3−xAl1+xOxN5−x (x∼2.2)

International Nuclear Information System (INIS)

Banno, Hiroki; Asaka, Toru; Fukuda, Koichiro

2014-01-01

The 8H-SiAlON crystal with general formula Si 3−x Al 1+x O x N 5−x was characterized using laboratory X-ray powder diffraction (CuKα 1 ), transmission electron microscopy and energy dispersive X-ray spectroscopy. The [Si: Al] molar ratios were determined to be [0.21(1): 0.79(1)], corresponding to x=2.2(1). The Si 0.8(1) Al 3.2(1) O 2.2(1) N 2.8(1) compound is hexagonal with space group P6 3 /mmc (Z=2). The unit-cell dimensions are a=0.298877(8) nm, c=2.30872(5) nm and V=0.178602(8) nm 3 . The initial structural model was successfully derived by the charge-flipping method and further refined by the Rietveld method. The final structural model showed the positional disordering of two of the three (Si,Al) sites. The maximum-entropy method-based pattern fitting (MPF) method was used to confirm the validity of the split-atom model, in which conventional structure bias caused by assuming intensity partitioning was minimized. The reliability indices calculated from the MPF were R wp =4.74%, S (=R wp /R e )=1.30, R p =3.40%, R B =1.04% and R F =0.74%. The disordered crystal structure was successfully described by overlapping four types of domains with ordered atom arrangements. The distribution of atomic positions in each of the domains can be achieved in the space group P6 3 mc. Two of the four types of domains are related by a pseudo-symmetry inversion, and the two remaining domains also have each other the inversion pseudo-symmetry. - Graphical abstract: Bird's eye view of electron densities up to 49.3% (0.071 nm −3 ) of the maximum on the plane parallel to (110) with the corresponding atomic arrangements of Si 0.8 Al 3.2 O 2.2 N 2.8 . - Highlights: • Crystal structure of Si 0.8 Al 3.2 O 2.2 N 2.8 is determined by laboratory X-ray powder diffraction. • The atom arrangements are represented by the split-atom model. • The maximum-entropy method-based pattern fitting method is used to confirm the validity of the model. • The disordered structure is described
H2 dilution effect in the Cat-CVD processes of the SiH4/NH3 system

International Nuclear Information System (INIS)

Ansari, S.G.; Umemoto, Hironobu; Morimoto, Takashi; Yoneyama, Koji; Izumi, Akira; Masuda, Atsushi; Matsumura, Hideki

2006-01-01

Gas-phase diagnostics in the catalytic chemical vapor deposition processes of the SiH 4 /NH 3 /H 2 system were carried out to examine the effect of H 2 dilution. The decomposition efficiency of NH 3 showed a sharp decrease with the introduction of a small amount of SiH 4 , but this decrease was recovered by the addition of H 2 when the NH 3 pressure was low. On the other hand, at higher NH 3 pressures, the decomposition efficiency showed a minor dependence on the H 2 partial pressure. The addition of SiH 4 to the NH 3 system decreases the H-atom density by one order of magnitude, but this decrease is also recovered by H 2 addition. H atoms produced from H 2 must re-activate the catalyzer surfaces poisoned by SiH 4 when the NH 3 pressure is low
Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si(111) by plasma assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Agrawal, Manvi; Dharmarasu, Nethaji; Radhakrishnan, K.; Pramana, Stevin Snellius

2015-01-01

Wet chemical etching, reflection high energy electron diffraction, scanning electron microscope and convergent beam electron diffraction have been employed to study the polarities of AlN and the subsequently grown GaN as a function of metal flux in the metal rich growth regime. Both AlN and GaN exhibited metal polarity in the intermediate growth conditions. However, in the droplet growth regime, the polarity of AlN and GaN were N polar and Ga polar, respectively. It was observed that Ga polar GaN could be obtained on both Al and N polar AlN. AlGaN/GaN high electron mobility transistor (HEMT) heterostructure exhibiting hall mobility of 900 cm 2 V -1 s -1 and sheet carrier density of 1.2 × 10 13 cm -2 was demonstrated using N polar AlN which confirmed Ga polarity of GaN. Al metal flux was likely to play an important role in controlling the polarity of AlN and determining the polarity of the subsequent GaN grown on Si(111) by plasma assisted molecular beam epitaxy (PA-MBE). (author)
The in-beam tracking detectors for R3B

Energy Technology Data Exchange (ETDEWEB)

Paschalis, Stefanos; Johansen, Jacob; Scheit, Heiko [Institut fuer Kernphysik, Technische Universitaet, D 64289 Darmstadt (Germany); Heil, Michael [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, D-64291 Darmstadt (Germany); Aumann, Thomas [Institut fuer Kernphysik, Technische Universitaet, D 64289 Darmstadt (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, D-64291 Darmstadt (Germany); Krivshich, Anatoly [PNPI St. Petersburg, 188300 Gatchina (Russian Federation); Collaboration: R3B-Collaboration

2015-07-01

The R3B experiment is part of the NUSTAR pillar at FAIR. One of the great strengths of the R3B experiment is the kinematically complete measurement of reactions with exotic ions with energies of up to 1 AGeV. Key components of the R3B experiment are the neutron detector NeuLAND, the γ and charge-particle calorimeter CALIFA, the Si Tracker and the in-beam tracking detectors. A cornerstone instrument of the setup is the new dipole magnet (GLAD) which bends and momentum analyses the high-rigidity beams. A precise tracking of the charged particles through the magnetic field is crucial to resolve the masses of heavy ions and measure the momentum of the fragments with high resolution. In this contribution we present the technical design details of the in-beam tracking detectors that will be used in the R3B experiment together with recent results obtained from in-beam prototype testing. In particular, we discuss Si detectors, detectors based on plastic-scintillator fibers and paddles, straw-tube gas detectors and the overall performance of the system.
Measurement of strain and strain relaxation in free-standing Si membranes by convergent beam electron diffraction and finite element method

International Nuclear Information System (INIS)

Gao, H.; Ikeda, K.; Hata, S.; Nakashima, H.; Wang, D.; Nakashima, H.

2011-01-01

Bridge-shaped free-standing Si membranes (FSSM), strained by low-pressure (LP) Si x N y , plasma-enhanced (PE) Si x N y and Si x Ge 1-x stressors, were measured by convergent beam electron diffraction (CBED) and the finite element method (FEM). The results of CBED show that, while the strain along the length of the FSSM is compressive in an LPSi x N y /Si sample, those along the length of the FSSM are tensile in PESi x N y /Si and Si x Ge 1-x /Si samples. The average absolute values of strains are different in FSSM with LPSi x N y , PESi x N y and Si x Ge 1-x as stressors. The FEM was used to compensate the results of CBED taking into account the strain relaxation in transmission electron microscopy (TEM) sample preparation. The FEM results give the strain properties in three dimensions, and are in good agreement with the results of CBED. There is approximately no strain relaxation along the length of FSSM, and the elastic strains along the other two axes in FSSM are partially relaxed by thinning down for the preparation of TEM samples.
Corrosion behavior of TiN, TiAlN, TiAlSiN thin films deposited on tool steel in the 3.5 wt.% NaCl solution

International Nuclear Information System (INIS)

Yoo, Yun Ha; Le, Diem Phuong; Kim, Jung Gu; Kim, Sun Kyu; Vinh, Pham Van

2008-01-01

TiN, TiAlN and TiAlSiN hard coatings were deposited onto AISI H13 tool steel by cathodic arc plasma method. X-ray diffraction (XRD) analysis confirmed that incorporation of Al and Si into TiN led to refinement of microstructure. From the results of potentiodynamic polarization test and electrochemical impedance spectroscopy (EIS) test conducted in an aerated 3.5% NaCl solution, the TiAlSiN film showed the best corrosion resistance with the lowest corrosion current density and porosity, the highest protective efficiency and total resistance (pore resistance plus charge transfer resistance)
Study of ion beam sputtered Fe/Si interfaces as a function of Si layer thickness

Science.gov (United States)

Kumar, Anil; Brajpuriya, Ranjeet; Singh, Priti

2018-01-01

The exchange interaction in metal/semiconductor interfaces is far from being completely understood. Therefore, in this paper, we have investigated the nature of silicon on the Fe interface in the ion beam deposited Fe/Si/Fe trilayers keeping the thickness of the Fe layers fixed at 3 nm and varying the thickness of the silicon sandwich layer from 1.5 nm to 4 nm. Grazing incidence x-ray diffraction and atomic force microscopy techniques were used, respectively, to study the structural and morphological changes in the deposited films as a function of layer thickness. The structural studies show silicide formation at the interfaces during deposition and better crystalline structure of Fe layers at a lower spacer layer thickness. The magnetization behavior was investigated using magneto-optical Kerr effect, which clearly shows that coupling between the ferromagnetic layers is highly influenced by the semiconductor spacer layer thickness. A strong antiferromagnetic coupling was observed for a value of tSi = 2.5 nm but above this value an unexpected behavior of hysteresis loop (step like) with two coercivity values is recorded. For spacer layer thickness greater than 2.5 nm, an elemental amorphous Si layer starts to appear in the spacer layer in addition to the silicide layer at the interfaces. It is observed that in the trilayer structure, Fe layers consist of various stacks, viz., Si doped Fe layers, ferromagnetic silicide layer, and nonmagnetic silicide layer at the interfaces. The two phase hysteresis loop is explained on the basis of magnetization reversal of two ferromagnetic layers, independent of each other, with different coercivities. X-ray photo electron spectroscopy technique was also used to study interfaces characteristics as a function of tSi.
Preparation and luminescence properties of Eu2+-doped CaSi2O2-dN2+2/3d phosphors

International Nuclear Information System (INIS)

Gu Yunxin; Zhang Qinghong; Wang Hongzhi; Li Yaogang

2009-01-01

Eu 2+ -doped CaSi 2 O 2-d N 2+2/3d phosphors for white LED lamps were prepared by solid-state reaction, and the effects of heat-treatment conditions and the overall composition of host lattice on the optical properties have been discussed. Eu 2+ -doped CaSi 2 O 2-d N 2+2/3d displayed a single broad emission band peak at 540 nm, which could be assigned to the allowed transition of Eu 2+ from the lowest crystal field component of 4f 6 5d to 4f 7 ground-state level. The excitation band of samples, extending from UV to blue, is extremely wide, so the phosphors are suitable for white LED lamps in combination with a UV or blue LED dies. The highest PL intensity is found for the sample sintered at 1400 0 C. Moreover, the emission intensity decreases when N partially replaces O. A red shift of emission wavelength did not occur with increasing of the N content.
Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

Energy Technology Data Exchange (ETDEWEB)

Sangeetha, P.; Ramakrishnan, V. [Department of Laser Studies, School of Physics, Madurai Kamaraj University, Madurai-625 021 (India); Jeganathan, K. [Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli-620 024 (India)

2013-06-15

The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE) on Si (111) substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E{sub 2} (high) and A{sub 1} (LO) phonon mode of InN core at 490 and 590 cm{sup -1} respectively and E{sub 2} (high) phonon mode of GaN shell at 573 cm{sup -1}. The free carrier concentration of InN core is found to be low in the order {approx} 10{sup 16} cm{sup -3} due to the screening of charge carriers by thin GaN shell. Diameter of InN core evaluated using the spatial correlation model is consistent with the transmission electron microscopic measurement of {approx}15 nm. The phonon-life time of core-shell nanowire structure is estimated to be {approx}0.4 ps. The micro-Raman mapping and its corresponding localised spectra for 325 nm excitation exhibit intense E{sub 2} (high) phonon mode of GaN shell at 573 cm{sup -1} as the decrease of laser interaction length and the signal intensity is quenched at the voids due to high spacing of NWs.
Production and characterization of Si-N films obtained by r.f. magnetron sputtering

International Nuclear Information System (INIS)

Oliveira, A.; Cavaleiro, A.; Vieira, M.T.

1993-01-01

Si-N films were deposited by sputtering from an Si 3 N 4 target with different deposition pressures and negative substrate bias. The films were amorphous and showed a ''featureless'' morphology. A high oxygen content was detected in unbiased films. For these films the Si/N ratio was very high compared with the target composition, whereas for biased films the opposite was observed. Si-N films presented cohesive failures for loads as high as 21 N and adhesive failure at 45 N when they were analysed by scratch test. Very high hardness (45 GPa) was obtained, particularly for biased films. Unbiased films were softer, which is attributed to the formation of silicon oxide and/or to a lower compressive stress level. (orig.)
Sol–gel assisted synthesis and photoluminescence property of Sr{sub 2}Si{sub 5}N{sub 8}:Eu{sup 2+}, Dy{sup 3+} red phosphor for white light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Zhang, Wentao, E-mail: zhangwentao2005@163.com [College of Materials and Chemistry & Chemical Engineering, Chengdu University of Technology, Chengdu 610059 (China); Mineral Resources Chemistry Key Laboratory of Sichuan Higher Education Institutions, Chengdu 610059 (China); Wang, Yulong; Gao, Yang [College of Materials and Chemistry & Chemical Engineering, Chengdu University of Technology, Chengdu 610059 (China); Long, Jianping [College of Materials and Chemistry & Chemical Engineering, Chengdu University of Technology, Chengdu 610059 (China); Mineral Resources Chemistry Key Laboratory of Sichuan Higher Education Institutions, Chengdu 610059 (China); Li, Junfeng [College of Materials and Chemistry & Chemical Engineering, Chengdu University of Technology, Chengdu 610059 (China)

2016-05-15

Eu{sup 2+}, Dy{sup 3+} co-doped Sr{sub 2}Si{sub 5}N{sub 8} red phosphors were prepared using a sol–gel-nitridation method at a lower temperature comparing with traditional solid state reaction. Effects of synthesis process, Eu{sup 2+} and Dy{sup 3+} doping concentration on the crystal structure and luminescence property of as-prepared phosphors were investigated. X-ray diffraction patterns indicated that all Sr{sub 2}Si{sub 5}N{sub 8}:Eu{sup 2+}, Dy{sup 3+} phosphors have the standard phase of Sr{sub 2}Si{sub 5}N{sub 8} structure. With a broad excitation from UV to blue light, a strong emission of Sr{sub 2}Si{sub 5}N{sub 8}:Eu{sup 2+}, Dy{sup 3+} with 4f{sup 6}5d{sup 1}→4f{sup 7} transition of Eu{sup 2+} ions was obtained at red region in photoluminescence spectra. Emission peaks in spectra were red-shifted from 611 to 632 nm for all Sr{sub 2}Si{sub 5}N{sub 8}:xEu{sup 2+} as Eu{sup 2+} ion concentrations increased, which due to Eu{sup 2+} ions occupying from the tenfold coordinated site (Sr1) to the eightfold coordinated site (Sr2). These Sr{sub 2}Si{sub 5}N{sub 8}:Eu{sup 2+} phosphors with Dy{sup 3+} co-doping showed excellent luminescence properties, included emission intensity and luminescence quenching. It is potential that Sr{sub 2}Si{sub 5}N{sub 8}:Eu{sup 2+}, Dy{sup 3+} phosphors can be applied in white LEDs combining with blue InGaN LEDs. - Highlights: • Eu{sup 2+}/Dy{sup 3+} co-doped Sr{sub 2}Si{sub 5}N{sub 8} red phosphor were prepared by sol–gel-nitridation. • Sol–gel-nitridation method decreased the crystallization temperature of Sr{sub 2}Si{sub 5}N{sub 8}:Eu{sup 2+}, Dy{sup 3+} effectively. • Luminescence properties of Sr{sub 2}Si{sub 5}N{sub 8}:Eu{sup 2+} were improved obviously by Dy{sup 3+} co-doping. • Luminescence properties of Sr{sub 2}Si{sub 5}N{sub 8}:Eu{sup 2+}, Dy{sup 3+} phosphors are superior to commercial Y{sub 2}O{sub 2}S:Eu{sup 3+}.
Role of yttria-stabilized zirconia produced by ion-beam-assisted deposition on the properties of RuO2 on SiO2/Si

International Nuclear Information System (INIS)

Jia, Q.X.; Arendt, P.; Groves, J.R.; Fan, Y.; Roper, J.M.; Foltyn, S.R.

1998-01-01

Highly conductive biaxially textured RuO 2 thin films were deposited on technically important SiO 2 /Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO 2 on SiO 2 /Si. The biaxially oriented RuO 2 had a room-temperature resistivity of 37 μΩ-cm and residual resistivity ratio above 2. We then deposited Ba 0.5 Sr 0.5 TiO 3 thin films on RuO 2 /IBAD-YSZ/SiO 2 /Si. The Ba 0.5 Sr 0.5 TiO 3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz. copyright 1998 Materials Research Society
Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering

Energy Technology Data Exchange (ETDEWEB)

Nishiwaki, M.; Ueda, K., E-mail: k-ueda@numse.nagoya-u.ac.jp; Asano, H. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2015-05-07

High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.
Synthesis of magnetically recyclable ZIF-8@SiO{sub 2}@Fe{sub 3}O{sub 4} catalysts and their catalytic performance for Knoevenagel reaction

Energy Technology Data Exchange (ETDEWEB)

Li, Qingyuan; Jiang, Sai; Ji, Shengfu, E-mail: jisf@mail.buct.edu.cn; Ammar, Muhammad; Zhang, Qingmin; Yan, Junlei

2015-03-15

Novel magnetic ZIF-8@SiO{sub 2}@Fe{sub 3}O{sub 4} catalysts were synthesized by encapsulating magnetic SiO{sub 2}@Fe{sub 3}O{sub 4} nanoparticles into ZIF-8 through in situ method. The structures of the catalysts were characterized by TEM, SEM, XRD, FT-IR, VSM, N{sub 2} adsorption/desorption and CO{sub 2}-TPD technology. The catalytic activity and recovery properties of the catalysts for the Knoevenagel reaction of p-chlorobenzaldehyde with malononitrile were evaluated. The results showed that the magnetic ZIF-8@SiO{sub 2}@Fe{sub 3}O{sub 4} catalysts had the larger surface areas, the suitable superparamagnetism, and good catalytic activity for Knoevenagel reaction. The conversion of p-chlorobenzaldehyde can reach ~98% and the selectivity of the production can reach ~99% over35.8%ZIF-8@SiO{sub 2}@Fe{sub 3}O{sub 4} (MZC-5) catalyst under the reaction condition of 25 °C and 4 h. The magnetic ZIF-8@SiO{sub 2}@Fe{sub 3}O{sub 4} catalysts also had good substrates adaptation. After reaction, the catalyst can be easily separated from the reaction mixture by an external magnet. The recovery catalyst can be reused five times and the conversion of p-chlorobenzaldehyde can be kept over 90%. - Graphical abstract: Novel magnetically recyclable ZIF-8@SiO{sub 2}@Fe{sub 3}O{sub 4} catalysts were synthesized by encapsulating magnetic SiO{sub 2}@Fe{sub 3}O{sub 4} nanoparticles into ZIF-8 and the as-synthesized catalysts exhibited a good catalytic activity for the Knoevenagel reaction. - Highlights: • A series of novel magnetic ZIF-8@SiO{sub 2}@Fe{sub 3}O{sub 4} catalysts were synthesized. • The catalysts had the larger surface areas and the suitable superparamagnetism. • The catalysts exhibited good catalytic activity for the Knoevenagel reaction. • After reaction the catalyst can be easily separated by an external magnet. • The recovery catalyst can be reused five times and can keep its catalytic activity.
Synthesis of suspended carbon nanotubes on silicon inverse-opal structures by laser-assisted chemical vapour deposition

International Nuclear Information System (INIS)

Shi, J; Lu, Y F; Wang, H; Yi, K J; Lin, Y S; Zhang, R; Liou, S H

2006-01-01

Suspended single-walled carbon nanotubes (SWNTs) have been synthesized on Si inverse-opal structures by laser-assisted chemical vapour deposition (LCVD). A CW CO 2 laser at 10.6 μm was used to directly irradiate the substrates during the LCVD process. At a laser power density of 14.3 MW m -2 , suspended SWNT networks were found predominantly rooted at the sharp edges in the Si inverse-opal structures. Raman spectroscopy indicated that the SWNT networks were composed of high-quality defect-free SWNTs with an average diameter of 1.3 nm. At a lower laser power density (6.4 MW m -2 ), multi-walled carbon nanotubes (MWNTs) were grown on the entire surface of the substrates. The preference for the synthesis of SWNTs or MWNTs was attributed to the difference in the catalyst sizes as well as the growth temperature in the LCVD process
Photoluminescence of the Mg2Al4Si5O18-Al2O3-MgAl2O4-SiO2 ceramic system containing Fe3+ and Cr3+ as impurity ions

Science.gov (United States)

Sosman, L. P.; López, A.; Pedro, S. S.; Papa, A. R. R.

2018-02-01

This work presents the results of photoluminescence, excitation and radiative decay time for a ceramic system containing Mg2Al4Si5O18-Al2O3-MgAl2O4-SiO2 with Fe3+ and Cr3+ as impurity ions. Emission data were obtained using several excitation wavelengths and the excitation data were acquired for the most intense emission bands. The optical results were analyzed according to the Tanabe-Sugano (TS) theory from which the crystalline field parameter Dq and Racah parameters B and C were obtained for the Fe3+ and Cr3+ sites. The results indicate that the Fe3+ and Cr3+ ions occupy tetrahedral and octahedral sites, respectively. The emission from Fe3+ and Cr3+ ions causes an intense and broad band ranging between 350 nm and 850 nm, showing that this material is a potential tunable radiation source at room temperature.
Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF{sup +}, CF{sub 2}{sup +}, CHF{sub 2}{sup +}, and CH{sub 2}F{sup +} ions

Energy Technology Data Exchange (ETDEWEB)

Ito, Tomoko; Karahashi, Kazuhiro; Fukasawa, Masanaga; Tatsumi, Tetsuya; Hamaguchi, Satoshi [Center for Atomic and Molecular Technologies, Osaka University, Osaka 565-0871 (Japan); Semiconductor Technology Development Division, SBG, CPDG, Sony Corporation, Atsugi, Kanagawa 243-0014 (Japan); Center for Atomic and Molecular Technologies, Osaka University, Osaka 565-0871 (Japan)

2011-09-15

Hydrogen in hydrofluorocarbon plasmas plays an important role in silicon nitride (Si{sub 3}N{sub 4}) reactive ion etching. This study focuses on the elementary reactions of energetic CHF{sub 2}{sup +} and CH{sub 2}F{sup +} ions with Si{sub 3}N{sub 4} surfaces. In the experiments, Si{sub 3}N{sub 4} surfaces were irradiated by monoenergetic (500-1500 eV) beams of CHF{sub 2}{sup +} and CH{sub 2}F{sup +} ions as well as hydrogen-free CF{sub 2}{sup +} and CF{sup +} ions generated by a mass-selected ion beam system and their etching yields and surface properties were examined. It has been found that, when etching takes place, the etching rates of Si{sub 3}N{sub 4} by hydrofluorocarbon ions, i.e., CHF{sub 2}{sup +} and CH{sub 2}F{sup +}, are higher than those by the corresponding fluorocarbon ions, i.e., CF{sub 2}{sup +} and CF{sup +}, respectively. When carbon film deposition takes place, it has been found that hydrogen of incident hydrofluorocarbon ions tends to scavenge fluorine of the deposited film, reducing its fluorine content.
Enhancement of optical absorption of Si (100) surfaces by low energy N+ ion beam irradiation

Science.gov (United States)

Bhowmik, Dipak; Karmakar, Prasanta

2018-05-01

The increase of optical absorption efficiency of Si (100) surface by 7 keV and 8 keV N+ ions bombardment has been reported here. A periodic ripple pattern on surface has been observed as well as silicon nitride is formed at the ion impact zones by these low energy N+ ion bombardment [P. Karmakar et al., J. Appl. Phys. 120, 025301 (2016)]. The light absorption efficiency increases due to the presence of silicon nitride compound as well as surface nanopatterns. The Atomic Force Microscopy (AFM) study shows the formation of periodic ripple pattern and increase of surface roughness with N+ ion energy. The enhancement of optical absorption by the ion bombarded Si, compared to the bare Si have been measured by UV - visible spectrophotometer.

Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

OpenAIRE

P. Sangeetha; K. Jeganathan; V. Ramakrishnan

2013-01-01

The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE) on Si (111) substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E2 (high) and A1 (LO) phonon mode of InN core at 490 and 590 cm−1 respectively and E2 (high) phonon mode of GaN shell at 573 cm−1. The free carrier concentration of InN core is foun...
Gamma and electron beam irradiation effects on SiR-EPDM blends

Directory of Open Access Journals (Sweden)

R. Deepalaxmi

2014-07-01

Full Text Available Ethylene Propylene Diene Monomer (EPDM is widely used as Cable Insulation Material (CIM due to its good mechanical strength. Silicone Rubber (SiR is used in high temperature environments due to its good di-electric properties/hydrophobicity. The blending of SiR-EPDM may result in the improvement in their specific properties. The SiR-EPDM blend of equal composition (50:50 was prepared. When such blends are used as Cable Insulation Materials (CIM, they should perform their safety functions throughout their installed life in Nuclear Power Plants (NPP. The CIM will be exposed to Gamma irradiation at the installed locations. The short time accelerated testing was carried out, in order to forecast long-term performance of CIM. Electron beam irradiation is widely used in cable manufacturing industries to improve the performance of the polymeric materials. In the current study, on the purpose to investigate the effect of gamma/electron beam irradiation on the 50–50 composition of SiR-EPDM blend, blend was exposed to 25 Mrad dose of gamma/electron beam irradiation. The electrical and mechanical parameters like Volume Resistivity (VRY, Surface Resistivity (SRY, Tensile Strength (TS, Elongation at Break (EB, Hardness (H of the virgin, gamma/electron beam irradiated blends were determined as per ASTM/IEC standards. The nature of degradation was investigated using Fourier Transform Infrared Spectroscopy (FTIR. To determine the elemental composition of the materials at the surface, Energy Dispersive X-ray Analysis (EDAX has been done. Scanning Electron Microscopy (SEM analysis has been done to study the morphological changes. The occurrence of cross-linking is found to be the mechanism for ageing in gamma/electron beam irradiated SiR-EPDM blends.
C and Si delta doping in Ge by CH{sub 3}SiH{sub 3} using reduced pressure chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, Yuji, E-mail: yamamoto@ihp-microelectronics.com [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Ueno, Naofumi; Sakuraba, Masao [Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1, Katahira, Aoba-Ku, Sendai 980-8577 (Japan); Murota, Junichi [Micro System Integration Center, Tohoku University, 519-1176, Aramaki aza Aoba, Aoba-ku, Sendai 980-0845 (Japan); Mai, Andreas [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Tillack, Bernd [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Technische Universität Berlin, HFT4, Einsteinufer 25, 10587 Berlin (Germany)

2016-03-01

C and Si delta doping in Ge are investigated using a reduced pressure chemical vapor deposition system to establish atomic-order controlled processes. CH{sub 3}SiH{sub 3} is exposed at 250 °C to 500 °C to a Ge on Si (100) substrate using H{sub 2} or N{sub 2} carrier gas followed by a Ge cap layer deposition. At 350 °C, C and Si are uniformly adsorbed on the Ge surface and the incorporated C and Si form steep delta profiles below detection limit of SIMS measurement. By using N{sub 2} as carrier gas, the incorporated C and Si doses in Ge are saturated at one mono-layer below 350 °C. At this temperature range, the incorporated C and Si doses are nearly the same, indicating CH{sub 3}SiH{sub 3} is adsorbed on the Ge surface without decomposing the C−Si bond. On the other hand, by using H{sub 2} as carrier gas, lower incorporated C is observed in comparison to Si. CH{sub 3}SiH{sub 3} injected with H{sub 2} carrier gas is adsorbed on Ge without decomposing the C−Si bond and the adsorbed C is reduced by dissociation of the C−Si bond during temperature ramp up to 550 °C. The adsorbed C is maintained on the Ge surface in N{sub 2} at 550 °C. - Highlights: • C and Si delta doping in Ge is investigated using RPCVD system by CH{sub 3}SiH{sub 3} exposure. • Atomically flat C and Si delta layers are fabricated at 350 °C. • Incorporated C and Si doses are saturated at one mono-layer below 350 °C. • CH{sub 3}SiH{sub 3} adsorption occurred without decomposing C−Si bond. • Adsorbed C is desorbed due to dissociation by hydrogen during postannealing at 550 °C.
Ion beam sputter deposited TiAlN films for metal-insulator-metal (Ba,Sr)TiO{sub 3} capacitor application

Energy Technology Data Exchange (ETDEWEB)

Lee, S.-Y. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China); Wang, S.-C. [Department of Mechanical Engineering, Southern Taiwan University of Technology, No. 1, Nantai St, Yung-Kang City, Tainan, Taiwan (China); Chen, J.-S. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China); Huang, J.-L. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China)], E-mail: jlh888@mail.ncku.edu.tw

2008-09-01

The present study evaluated the feasibility of TiAlN films deposited using the ion beam sputter deposition (IBSD) method for metal-insulator-metal (MIM) (Ba,Sr)TiO{sub 3} (BST) capacitors. The BST films were crystallized at temperatures above 650 deg. C. TiAlN films deposited using the IBSD method were found having smooth surface and low electrical resistivity at high temperature conditions. TiAlN films showed a good diffusion barrier property against BST components. The J-E (current density-electric field) characteristics of Al/BST/TiAlN capacitors were good, with a high break down electric field of {+-} 2.5 MV/cm and a leakage current density of about 1 x 10{sup -5} A/cm{sup 2} at an applied field of {+-} 0.5 MV/cm. Thermal stress and lateral oxidation that occurred at the interface damaged the capacitor stacking structure. Macro holes that dispersed on the films resulted in higher leakage current and inconsistent J-E characteristics. Vacuum annealing with lower heating rate and furnace cooling, and a Ti-Al adhesion layer between TiAlN and the SiO{sub 2}/Si substrate can effectively minimize the stress effect. TiAlN film deposited using IBSD can be considered as a potential electrode and diffusion barrier material for MIM BST capacitors.
Comparative study on stress in AlGaN/GaN HEMT structures grown on 6H-SiC, Si and on composite substrates of the 6H-SiC/poly-SiC and Si/poly-SiC

International Nuclear Information System (INIS)

Guziewicz, M; Kaminska, E; Piotrowska, A; Golaszewska, K; Domagala, J Z; Poisson, M-A; Lahreche, H; Langer, R; Bove, P

2008-01-01

The stresses in GaN-based HEMT structures grown on both single crystal 6H SiC(0001) and Si(111) have been compared to these in the HEMT structures grown on new composite substrates engendered as a thin monocrystalline film attached to polycrystalline 3C-SiC substrate. By using HRXRD technique and wafer curvature method we show that stress of monocrystalline layer in composite substrates of the type mono-Si/poly-SiC is lower than 100 MPa and residual stress of epitaxial GaN buffer grown on the composite substrate does not exceed 0.31 GPa, but in the cases of single crystal SiC or Si substrates the GaN buffer stress is compressive in the range of -0.5 to -0.75 GPa. The total stress of the HEMT structure calculated from strains is consistent with the averaged stress of the multilayers stack measured by wafer curvature method. The averaged stress of HEMT structure grown on single crystals is higher than those in structures grown on composites substrates
Folate conjugated Mn{sub 3}O{sub 4}@SiO{sub 2} nanoparticles for targeted magnetic resonance imaging in vivo

Energy Technology Data Exchange (ETDEWEB)

Yang, Xinyi [The Education Ministry Key Lab of Resource Chemistry and Shanghai Key Laboratory of Rare Earth Functional Materials, Shanghai Normal University, Shanghai 200234 (China); Zhou, Zhiguo, E-mail: zgzhou@shnu.edu.cn [The Education Ministry Key Lab of Resource Chemistry and Shanghai Key Laboratory of Rare Earth Functional Materials, Shanghai Normal University, Shanghai 200234 (China); Wang, Li; Tang, Caizhi; Yang, Hong [The Education Ministry Key Lab of Resource Chemistry and Shanghai Key Laboratory of Rare Earth Functional Materials, Shanghai Normal University, Shanghai 200234 (China); Yang, Shiping, E-mail: shipingy@shnu.edu.cn [The Education Ministry Key Lab of Resource Chemistry and Shanghai Key Laboratory of Rare Earth Functional Materials, Shanghai Normal University, Shanghai 200234 (China); The Education Ministry Key Lab of Pesticide and Chemical Biology, South China Agricultural University, Guangzhou 510641 (China)

2014-09-15

Graphical abstract: The Mn{sub 3}O{sub 4}@SiO{sub 2}(PEG)–FA has been used as a T{sub 1}-MRI probe for in vivo. - Highlights: • The PEG and FA modified Mn{sub 3}O{sub 4}@SiO{sub 2} nanoparticles (Mn{sub 3}O{sub 4}@SiO{sub 2}–FA) were prepared. • Mn{sub 3}O{sub 4}@SiO{sub 2}–FA exhibited the good colloidal stability in the simulated biological medium. • Mn{sub 3}O{sub 4}@SiO{sub 2}–FA showed the targeting ability to HeLa cells overexpressed the FA receptor. • The T{sub 1}-weighted magnetic resonance (MR) imaging demonstrated the targeting ability of Mn{sub 3}O{sub 4}@SiO{sub 2}–FA in vivo tumor. - Abstract: The monodisperse silica-coated manganese oxide nanoparticles (Mn{sub 3}O{sub 4}@SiO{sub 2} NPs) were synthesized via the high temperature pyrolysis approach and were aminated through silanization. The amine-functionalized Mn{sub 3}O{sub 4} NPs enabled the covalent conjugation of hydrophilic methoxypoly(ethylene glycol) (PEG) and the targeting ligand of folate (FA) onto their surface. The formed PEG and FA modified Mn{sub 3}O{sub 4} NPs (Mn{sub 3}O{sub 4}@SiO{sub 2}(PEG)–FA) exhibited the good colloidal stability in the simulated biological medium and the targeting ability to HeLa cells overexpressed the FA receptor. The T{sub 1}-weighted magnetic resonance (MR) imaging and inductively coupled plasma atomic emission spectroscopy (ICP-AES) analysis of Mn{sub 3}O{sub 4}@SiO{sub 2}(PEG)–FA NPs further demonstrated their targeting ability in tumor.
Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors

Energy Technology Data Exchange (ETDEWEB)

Jia, Yifan; Lv, Hongliang [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Song, Qingwen, E-mail: qwsong@xidian.edu.cn [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071 (China); Tang, Xiaoyan, E-mail: xytang@xidian.edu.cn [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Xiao, Li; Wang, Liangyong; Tang, Guangming [Zhongxing Telecommunication Equipment Corporation, Shenzhen 518057 (China); Zhang, Yimen; Zhang, Yuming [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China)

2017-03-01

Highlights: • Effect of oxidation temperature on interfacial properties of SiO{sub 2}/SiC is investigated. • Raising the oxidation temperature effectively decreases the density of NITs and N{sub eff}. • The higher oxidation temperature reduces the surface RMS roughness of the grow SiO{sub 2}. • SIMS and XPS results reveal the improvement mechanism of high temperature oxidation. - Abstract: The effect of oxidation temperature on interfacial properties of n-type 4H-SiC metal-oxide-semiconductor capacitors has been systematically investigated. Thermal dry oxidation process with three different oxidation temperatures 1200 °C, 1300 °C and 1350 °C were employed to grow SiO{sub 2} dielectric, following by the standard post-oxidation annealing (POA) in NO ambience at 1175 °C for 2 h. The root mean square (RMS) roughness measured by Atomic Force Microscopy for the thermally grown SiO{sub 2} before POA process is reduced with increasing the oxidation temperature, obtaining an atomically flat surface with a RMS of 0.157 nm from the sample oxidized at 1350 °C. Several kinds of electrical measurements were used to evaluate the densities of near interface traps and effective fixed dielectric charge for the samples, exhibiting a trend reduced with increasing the oxidation temperature. The interface state density of 3 × 10{sup 11} cm{sup −2}eV{sup −1} at 0.2 eV from the conduction band edge was achieved from conductance method measurement for the sample oxidized at 1350 °C. The results from Secondary Ion Mass Spectroscopy and X-ray Photoelectron Spectroscopy demonstrate that high oxidation temperature can reduce the width of transition layer, the excess Si and silicon suboxide compositions near the interface, leading to effective improvement of the interfacial properties.
Thermal expansion of lanthanum silicate oxyapatite (La9.33+2x(SiO4)6O2+3x), lanthanum oxyorthosilicate (La2SiO5) and lanthanum sorosilicate (La2Si2O7)

International Nuclear Information System (INIS)

Fukuda, Koichiro; Asaka, Toru; Uchida, Tomohiro

2012-01-01

Four types of powder specimens of La 9.33 (SiO 4 ) 6 O 2 (space group P6 3 /m and Z=1), La 9.33+2x (SiO 4 ) 6 O 2+3x with 0.06≤x≤0.13 (P6 3 /m and Z=1), La 2 SiO 5 (P2 1 /c and Z=4) and La 2 Si 2 O 7 (P2 1 /c and Z=4) were examined by high-temperature X-ray powder diffractometry to determine the changes in unit-cell dimensions up to 1473 K. The anisotropy of thermal expansion was demonstrated for the former two crystals to clarify the thermal behaviors of the highly c-axis-oriented polycrystals. With La 9.33 (SiO 4 ) 6 O 2 , the linear expansion coefficient of the a-axis (α a ) was 4.8×10 −6 K −1 and that of the c-axis (α c ) was 1.8×10 −6 K −1 in the temperature range from 298 to 1473 K. The α a - and α c -values of La 9.33+2x (SiO 4 ) 6 O 2+3x (0.06≤x≤0.13) were, respectively, 5.9×10 −6 K −1 and 2.3×10 −6 K −1 . The coefficients of mean linear thermal expansion were 4.9×10 −6 K −1 for La 2 SiO 5 and 6.0×10 −6 K −1 for La 2 Si 2 O 7 , which describe the thermal expansion behaviors of the randomly grain-oriented polycrystalline materials. - Graphical abstarct: Temperature dependence of the coefficients of thermal expansion (CTE). The linear CTE along the a-axes for La 9.33 (SiO 4 ) 6 O 2 and La 9.33+2x (SiO 4 ) 6 O 2+3x with 0.06≤x≤0.13. The mean linear CTE for La 2 SiO 5 and La 2 Si 2 O 7 . Highlights: ► We examined the thermal expansion of La 9.33+2x (SiO 4 ) 6 O 2+3x (x=0 and 0.06≤x≤0.13), La 2 SiO 5 and La 2 Si 2 O 7 ► Unit-cell dimensions were determined up to 1473 K by high-temperature X-ray diffraction ► Anisotropic expansion was clarified for La 9.33+2x (SiO 4 ) 6 O 2+3x (x=0 and 0.06≤x≤0.13) ► Mean linear thermal expansion was determined for La 2 SiO 5 and La 2 Si 2 O 7.
Recovery effects due to the interaction between nuclear and electronic energy losses in SiC irradiated with a dual-ion beam

Energy Technology Data Exchange (ETDEWEB)

Thomé, Lionel, E-mail: thome@csnsm.in2p3.fr; Debelle, Aurélien; Garrido, Frédérico; Sattonnay, Gaël; Mylonas, Stamatis [Centre de Sciences Nucléaires et de Sciences de la Matière, CNRS-IN2P3-Université Paris-Sud, Bât. 108, F-91405 Orsay (France); Velisa, Gihan [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O.B. MG-6, 077125 Magurele (Romania); Miro, Sandrine; Trocellier, Patrick; Serruys, Yves [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

2015-03-14

Single and dual-beam ion irradiations of silicon carbide (SiC) were performed to study possible Synergetic effects between Nuclear (S{sub n}) and Electronic (S{sub e}) Energy Losses. Results obtained combining Rutherford backscattering in channeling conditions, Raman spectroscopy, and transmission electron microscopy techniques show that dual-beam irradiation of SiC induces a dramatic change in the final sample microstructure with a substantial decrease of radiation damage as compared to single-beam irradiation. Actually, a defective layer containing dislocations is formed upon dual-beam irradiation (S{sub n} and S{sub e}), whereas single low-energy irradiation (S{sub n} alone) or even sequential (S{sub n} + S{sub e}) irradiations lead to full amorphization. The healing process is ascribed to the electronic excitation arising from the electronic energy loss of swift ions. These results shed new light on the long-standing puzzling problem of the existence of a possible synergy between S{sub n} and S{sub e} in ion-irradiation experiments. This work is interesting for both fundamental understanding of the ion-solid interactions and technological applications in the nuclear industry where recovery S{sub n}/S{sub e} effects may preserve the integrity of nuclear devices.
Q(n) species distribution in K2O.2SiO2 glass by 29Si magic angle flipping NMR.

Science.gov (United States)

Davis, Michael C; Kaseman, Derrick C; Parvani, Sahar M; Sanders, Kevin J; Grandinetti, Philip J; Massiot, Dominique; Florian, Pierre

2010-05-06

Two-dimensional magic angle flipping (MAF) was employed to measure the Q((n)) distribution in a (29)Si-enriched potassium disilicate glass (K(2)O.2SiO(2)). Relative concentrations of [Q((4))] = 7.2 +/- 0.3%, [Q((3))] = 82.9 +/- 0.1%, and [Q((2))] = 9.8 +/- 0.6% were obtained. Using the thermodynamic model for Q((n)) species disproportionation, these relative concentrations yield an equilibrium constant k(3) = 0.0103 +/- 0.0008, indicating, as expected, that the Q((n)) species distribution is close to binary in the potassium disilicate glass. A Gaussian distribution of isotropic chemical shifts was observed for each Q((n)) species with mean values of -82.74 +/- 0.03, -91.32 +/- 0.01, and -101.67 +/- 0.02 ppm and standard deviations of 3.27 +/- 0.03, 4.19 +/- 0.01, and 5.09 +/- 0.03 ppm for Q((2)), Q((3)), and Q((4)), respectively. Additionally, nuclear shielding anisotropy values of zeta =-85.0 +/- 1.3 ppm, eta = 0.48 +/- 0.02 for Q((2)) and zeta = -74.9 +/- 0.2 ppm, eta = 0.03 +/- 0.01 for Q((3)) were observed in the potassium disilicate glass.
Dispersing Si{sub 3}N{sub 4} at high solids loading - applied to protein forming

Energy Technology Data Exchange (ETDEWEB)

Lyckfeldt, O.; Palmqvist, L. [Swedish Ceramic Inst., Goeteborg (Sweden); Poeydemenge, F. [ENSCI, Limoges (France)

2002-07-01

The dispersing of a Si{sub 3}N{sub 4} powder (UBE SN-E10) at high solids loading in aqueous media was investigated. The powder was used in the as-received (raw) state, after thermal (calcinations) and/or mechanical pre-treatments (ball milling{yields}freeze granulation{yields}freeze-drying). Slips were prepared using pH adjustment with NH{sub 4}OH or an addition of Tiron (low-M{sub w} sulphonic acid). Zeta potential measurements of diluted systems and rheological evaluations of concentrated suspensions were conducted. The effect of adding whey protein concentrate (WPC) was also studied. Zeta potential measurements showed a clear decrease in pH{sub iep} by calcination, whereas Tiron slightly increased the pH{sub iep} of calcined powder and decreased the pH{sub iep} of the as-received powder. Rheological data showed that pH adjustment to 10 was more efficient in stabilising the as-received powder than the calcined powder. pH adjustment was also considered to be the most important effect of adding small amounts of Tiron (0.08 wt%). However, for calcined powder, Tiron was shown to be equally efficient as pH adjustment. Pre-milling followed by freeze granulation/freeze-drying resulted in de-agglomerated powders with improved ability to rapidly disperse and, hence, extend the possibility of achieving extreme solids loadings. When approaching the practical limits in solids loading of these pre-milled powders, slips with 49.5 vol% of as-received and 46.6 vol% of calcined powders displayed clear shear thickening behaviour. However, addition of WPC (12 wt% based on water) significantly decreased the degree of shear thickening although the viscosity at lower shear rates increased. The gelling of WPC was distinct and rapid in suspensions with the two pre-milled powders, as-received stabilised at pH 10 and calcined stabilised with Tiron. (orig.)
Fluorcanasite, K3Na3Ca5Si12O30(F,OH)4 · H2O, a new mineral species from the Khibiny alkaline pluton, Kola Peninsula, Russia, and new data on canasite

Science.gov (United States)

Khomyakov, A. P.; Nechelyustov, G. N.; Krivokoneva, G. K.; Rastsvetaeva, R. K.; Rozenberg, K. A.; Rozhdestvenskaya, I. V.

2009-12-01

Fluorcanasite is described, a new mineral species found in dumps of the Kirovsk apatite mine, Mt. Kukisvumchorr, Khibiny alkaline pluton, Kola Peninsula, Russia. The new mineral is associated with microcline, nepheline, aegirine, scherbakovite, lamprophyllite, pectolite, mosandrite, villiaumite, rasvumite, and molybdenite. It occurs as prismatic crystals up to 0.2-0.3 × 1-2 mm in size extending along [010]. Fluorcanasite is purple, transparent, with white streak and vitreous luster. The fracture is hackly along the extension and stepped in other directions. The mineral is brittle. The cleavage is eminent parallel to {100} and {201} and perfect parallel to {001}. D(meas) = 2.68(2) g/cm3 (volumetric method); D(calc) = 2.69 g/cm3. Fluorcanasite is biaxial, negative, n α = 1.538(1), n β = 1.546(1), n γ = 1.549(1), 2 V(meas) = 60(2)°, 2 V(calc) = 63°. Dispersion r > v. The new mineral is pleochroic according to the scheme N β > N γ > N α; N β is purple, N γ is lilac, and N α is amber-yellow. Orientation is as follows: b = N β, a∧ N γ = 3°, c∧ N α = 19°. Fluorcanasite is not luminescent in UV light and slowly decomposes in acid. The new mineral is monoclinic, space group Cm, a = 18.846(4), b = 7.242(1), c = 12.650(2) Å, β = 111.84(2)°, V = 1602.6(4) Å3, Z = 2. The strongest reflections [ d, Å( I)] in the X-ray powder pattern of a grainoriented sample are 2.915(100), 4.204(40), 5.872(36), 4.712(36), 2.358(32), 3.012(24), 2.310(24), 3.082(24) and the same reflections in a randomly oriented sample are 3.082(100), 2.915(85), 4.712(46), 4.204(41), 3.340(35), 5.872(33), 2.658(30). The chemical composition, determined with an electron microprobe, is as follows, wt %: 7.19 Na2O, 10.91 K2O, 19.55 CaO, 0.27 FeO, 2.08 MnO, 55.84 SiO2, 4.10 F, 2.22 H2O (determined on the basis of structural data), 1.73-O = F2; the total is 100.43. The empirical formula, calculated on the basis of Si = 12, is K2.99Na3.00(Ca4.50Mn0.38·Fe{0.05/2+})Σ4.93Si12O29.93(F2.79OH1
High performance Si immersion gratings patterned with electron beam lithography

Science.gov (United States)

Gully-Santiago, Michael A.; Jaffe, Daniel T.; Brooks, Cynthia B.; Wilson, Daniel W.; Muller, Richard E.

2014-07-01

by a factor of 5. (3) The serial write process for typical gratings yields write times of about 24 hours- this makes prototyping costly. We discuss work with negative e-beam resist to reduce the fill factor of exposure, and therefore limit the exposure time. We also discuss the tradeoffs of long write-time serial write processes like e-beam with UV photomask lithography. We show the results of experiments on small pattern size prototypes on silicon wafers. Current prototypes now exceed 30 dB of suppression on spectral and spatial dimension ghosts compared to monochromatic spectral purity measurements of the backside of Si echelle gratings in reflection at 632 nm. We perform interferometry at 632 nm in reflection with a 25 mm circular beam on a grating with a blaze angle of 71.6°. The measured wavefront error is 0.09 waves peak to valley.
A dominant electron trap in molecular beam epitaxial InAlN lattice-matched to GaN

Science.gov (United States)

Pandey, Ayush; Bhattacharya, Aniruddha; Cheng, Shaobo; Botton, Gianluigi A.; Mi, Zetian; Bhattacharya, Pallab

2018-04-01

Deep levels in lattice-matched undoped and Si-doped InAlN/GaN grown by plasma-assisted molecular beam epitaxy have been identified and characterized by capacitance and photocapacitance measurements. From x-ray diffraction, reflectance measurements, electron energy loss spectroscopy and high-resolution transmission electron microscopy it is evident that the material has two distinct phases with different compositions. These correspond to In compositions of 18.1% and 25.8%, with corresponding bandgaps of 4.6 eV and 4.1 eV, respectively. The lower bandgap material is present as columnar microstructures in the form of quantum wires. A dominant electron trap with an activation energy of 0.293 ± 0.01 eV, a small capture cross-section of (1.54 ± 0.25) × 10-18 cm2, and density increasing linearly with Si doping density is identified in all the samples. The characteristics of the electron trap and variation of diode capacitance are discussed in the context of carrier dynamics involving the dominant trap level and the quantum wires.
Measurement of strain and strain relaxation in free-standing Si membranes by convergent beam electron diffraction and finite element method

Energy Technology Data Exchange (ETDEWEB)

Gao, H., E-mail: hongye18@mm.kyushu-u.ac.jp [Faculty of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Ikeda, K.; Hata, S.; Nakashima, H. [Faculty of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Wang, D.; Nakashima, H. [Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

2011-04-15

Bridge-shaped free-standing Si membranes (FSSM), strained by low-pressure (LP) Si{sub x}N{sub y}, plasma-enhanced (PE) Si{sub x}N{sub y} and Si{sub x}Ge{sub 1-x} stressors, were measured by convergent beam electron diffraction (CBED) and the finite element method (FEM). The results of CBED show that, while the strain along the length of the FSSM is compressive in an LPSi{sub x}N{sub y}/Si sample, those along the length of the FSSM are tensile in PESi{sub x}N{sub y}/Si and Si{sub x}Ge{sub 1-x}/Si samples. The average absolute values of strains are different in FSSM with LPSi{sub x}N{sub y}, PESi{sub x}N{sub y} and Si{sub x}Ge{sub 1-x} as stressors. The FEM was used to compensate the results of CBED taking into account the strain relaxation in transmission electron microscopy (TEM) sample preparation. The FEM results give the strain properties in three dimensions, and are in good agreement with the results of CBED. There is approximately no strain relaxation along the length of FSSM, and the elastic strains along the other two axes in FSSM are partially relaxed by thinning down for the preparation of TEM samples.
Varying the Lewis base coordination of the Y2N2 core in the reduced dinitrogen complexes {[(Me3Si)2N]2(L)Y}2(μ-η2:η2-N2) (L = benzonitrile, pyridines, triphenylphosphine oxide, and trimethylamine N-oxide).

Science.gov (United States)

Corbey, Jordan F; Farnaby, Joy H; Bates, Jefferson E; Ziller, Joseph W; Furche, Filipp; Evans, William J

2012-07-16

The effect of the neutral donor ligand, L, on the Ln(2)N(2) core in the (N═N)(2-) complexes, [A(2)(L)Ln](2)(μ-η(2):η(2)-N(2)) (Ln = Sc, Y, lanthanide; A = monoanion; L = neutral ligand), is unknown since all of the crystallographically characterized examples were obtained with L = tetrahydrofuran (THF). To explore variation in L, displacement reactions between {[(Me(3)Si)(2)N](2)(THF)Y}(2)(μ-η(2):η(2)-N(2)), 1, and benzonitrile, pyridine (py), 4-dimethylaminopyridine (DMAP), triphenylphosphine oxide, and trimethylamine N-oxide were investigated. THF is displaced by all of these ligands to form {[(Me(3)Si)(2)N](2)(L)Y}(2)(μ-η(2):η(2)-N(2)) complexes (L = PhCN, 2; py, 3; DMAP, 4; Ph(3)PO, 5; Me(3)NO, 6) that were fully characterized by analytical, spectroscopic, density functional theory, and X-ray crystallographic methods. The crystal structures of the Y(2)N(2) cores in 2-5 are similar to that in 1 with N-N bond distances between 1.255(3) Å and 1.274(3) Å, but X-ray analysis of the N-N distance in 6 shows it to be shorter: 1.198(3) Å.
Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Belyaev, K. G., E-mail: belyaev.kirill@mail.ioffe.ru; Usikova, A. A.; Jmerik, V. N.; Kop’ev, P. S.; Ivanov, S. V.; Toropov, A. A.; Brunkov, P. N. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2015-02-15

A significant (by up to a factor of 7) increase in the internal quantum efficiency of luminescence is achieved at room temperature in semiconductor-metal-insulator hybrid structures fabricated by the successive deposition of gold and Si{sub 3}N{sub 4} over an array of InGaN nanoblocks, grown by molecular-beam epitaxy. The observed effect can be accounted for by the resonant interaction of excitons localized in InGaN nanoblocks with localized surface-plasmon modes in gold intrusions embedded into InGaN and Si{sub 3}N{sub 4}.
Nano-crystalline p-ZnGa{sub 2}Te{sub 4}/n-Si as a new heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Sakr, G.B. [Nano-Science Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Fouad, S.S. [Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Yahia, I.S., E-mail: dr_isyahia@yahoo.com [Nano-Science Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Semicondcutor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Abdel Basset, D.M. [Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Yakuphanoglu, F. [Physics Department, Faculty of Science and Arts, Firat University, Elazig (Turkey)

2013-02-15

Graphical abstract: Display Omitted Highlights: ► ZnGa{sub 2}Te{sub 4}/Si thin film was prepared by thermal evaporation technique. ► XRD and AFM graphs support the nano-crystalline of the studied device. ► Dark current–voltage characteristics of the heterojunction diode were investigated. ► Electrical parameters and conduction mechanism were determined. ► Conduction mechanisms were controlled by TE, SCLC and TCLC. -- Abstract: In this communication, ZnGa{sub 2}Te{sub 4} thin film was prepared by thermal evaporation technique on n-Si substrate. P-ZnGa{sub 2}Te{sub 4}/n-Si heterojunction diode was fabricated. The structure of ZnGa{sub 2}Te{sub 4} thin film was checked by XRD pattern and confirmed by AFM micrographs. The dark current–voltage characteristics of the heterojunction diode were investigated to determine the electrical parameters and conduction mechanism as a function of forward and reverse biasing conditions in the range (−10 V to 10 V) at temperature interval (303–423 K). The conduction mechanism was controlled by thermionic emission, space charge limited (SCLC) and trap-charge limited current (TCLC) mechanisms. The basic parameters such as the series resistance R{sub s}, the shunt resistance R{sub sh}, the ideality factor n and the barrier height φ{sub b} of the diode, the total density of trap states N{sub 0} and the exponential trapping distribution P{sub o} were determined. The obtained results showed that ZnGa{sub 2}Te{sub 4} is a good candidate for the applications of electronic devices.
Influence of Preparation Conditions on Electrical Properties of the Al/Alq3/Si Diode Structures

Directory of Open Access Journals (Sweden)

Irina ČERNIUKĖ

2013-12-01

Full Text Available Hybrid organic-inorganic diode structures, Al/Alq3/n-Si and Al/Alq3/p-Si based on thin films of tris(8-hydroxyquinoline aluminum (Alq3 have been investigated. The Alq3 films were evaporated in vacuum and spin coated onto patterned areas of crystalline n- and p-type Si substrates with chemically removed native SiO2 layer. Current-voltage characteristics of the diode structures demonstrated improved rectification property compared to similar Al/n-Si and Al/p-Si device structures. Increased barrier height values (0.90 eV ÷ 1.1 eV and 0.77 eV ÷ 0.91 eV for the Al/Alq3/n-Si and Al/Alq3/p-Si device structures, respectively certified presence of an interface dipole induced by the organic interlayer. Non-ideal behavior of forward current-voltage characteristics has been explained assuming non-uniformity of barrier height, presence of interface states, and influence of the organic film on diode series resistance and space charge limited current. DOI: http://dx.doi.org/10.5755/j01.ms.19.4.2733
Parametric investigation of the formation of epitaxial Ti{sub 3}SiC{sub 2} on 4H-SiC from Al-Ti annealing

Energy Technology Data Exchange (ETDEWEB)

Abi-Tannous, T., E-mail: tony.abi-tannous@insa-lyon.fr [Université de Lyon, CNRS, Laboratoire Ampère, INSA-Lyon, UMR 5005, F-69621 (France); Soueidan, M. [Université de Lyon, CNRS, Laboratoire Ampère, INSA-Lyon, UMR 5005, F-69621 (France); Ferro, G. [Université de Lyon, CNRS, Laboratoire des Multimatériaux et Interfaces, UMR 5615, F-69622 (France); Lazar, M. [Université de Lyon, CNRS, Laboratoire Ampère, INSA-Lyon, UMR 5005, F-69621 (France); Toury, B. [Université de Lyon, CNRS, Laboratoire des Multimatériaux et Interfaces, UMR 5615, F-69622 (France); Beaufort, M.F.; Barbot, J.F. [Institut Pprime CNRS - Université de Poitiers - ENSMA - UPR 3346 Département Physique et Mécanique des Matériaux SP2MI 86962 Futuroscope Chasseneuil Cedex (France); Penuelas, J. [Université de Lyon, Institut des Nanotechnologies de Lyon, UMR CNRS 5270, 69134 ECULLY Cedex (France); Planson, D. [Université de Lyon, CNRS, Laboratoire Ampère, INSA-Lyon, UMR 5005, F-69621 (France)

2015-08-30

Highlights: • Growth of Ti{sub 3}SiC{sub 2} thin films onto 4H-SiC (0 0 0 1) 8° and 4°-off substrates. • High temperature application for SiC ohmic contact. • Thermal annealing of Ti{sub -}Al layers. • Influence of the composition in the Ti{sub x}Al{sub 1−x} alloy was investigated. • Influence of the annealing temperature (900–1200 °C) after deposition was investigated. • The structural investigations were mainly performed by using X-ray diffraction (XRD), and transmission electron microscopy (TEM). • Elementary and profile characterization were performed using X-Ray photoelectron spectroscopy (XPS). - Abstract: The growth of Ti{sub 3}SiC{sub 2} thin films was studied onto 4H-SiC (0 0 0 1) 8° and 4°-off substrates by thermal annealing of Ti{sub x}Al{sub 1−x} (0.5 ≤ x ≤ 1) layers. The annealing time was fixed at 10 min under Argon atmosphere. The synthesis conditions were also investigated according to the annealing temperature (900–1200 °C) after deposition. X-Ray Diffraction (XRD) and Transmission Electron Microscope (TEM) show that the layer of Ti{sub 3}SiC{sub 2} is epitaxially grown on the 4H-SiC substrate. In addition the interface looks sharp and smooth with evidence of interfacial ordering. Moreover, during the annealing procedure, the formation of unwanted aluminum oxide was detected by using X-Ray Photoelectron Spectroscopy (XPS); this layer can be removed by using a specific annealing procedure.

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