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Sample records for sus opciones si

  1. Brasil, opciones estratégicas de una potencia emergente para afirmar su liderazgo mundial

    Directory of Open Access Journals (Sweden)

    Gisela da Silva Guevara

    2011-11-01

    Full Text Available Desde el siglo XIX Brasil fue adaptando sus estrategias de soft power (poder blando con la meta de afirmar su poderío político y económico en América Latina y en el mundo, en contraposición a otros poderes hegemónicos regionales y mundiales. Sin embargo, sus rivalidades con potencias regionales, como Argentina o Venezuela y, con Estados Unidos, a nivel regional y mundial, nunca llevaron al coloso suramericano a optar por confrontaciones bélicas. Sus estrategias y opciones de política exterior tuvieron siempre en mira la consolidación del país por vía no violenta y a largo plazo. El presente artículo debate la pregunta-problema de si la nación suramericana podrá seguir la línea de poder blando que ha respetado, por siglos, desde su independencia, o será tentada a privilegiar el hard power para lograr, finalmente, ser reconocida como gran potencia en el siglo XXI.

  2. PARA MEDIR LA FLEXIBILIDAD SE DEBEN USAR OPCIONES REALES: UNA VISIÓN GLOBAL

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    Oscar Daniel Mejía Carvajal

    2003-01-01

    Full Text Available Recientemente se ha sentido que los modelos tradicionales de flujo de caja discontinuo (DCF no explican completamente las opciones administrativas de la firma, así como tampoco la flexibilidad y las posibles variantes en sus operaciones. Actualmente la teoría y el desarrollo del modelo de opciones están siendo aplicados para la valoración de derechos de conversión y de suscripción de bonos y acciones, contratos de colocación de valores, seguros, deuda y patrimonio de una firma, hipotecas, deudas subordinadas, contratos de exploración petrolera, etc. Una opción provee al tenedor el derecho de comprar o vender una cantidad fijada de un activo subyacente a un precio fijado de antemano (llamado strike o precio de ejercicio, antes o en la fecha de expiración de la opción. Los árboles de decisión (teoría de juegos constituyen una alternativa para evaluar la flexibilidad asociada con las decisiones de inversión. No obstante, la metodología de opciones reales es rigurosamente más correcta; tanto las opciones reales como los árboles de decisión capturan la flexibilidad, sin embargo las opciones reales son ajustadas por el riesgo.

  3. OPCIONES ESTRATÉGICAS DE DESARROLLO ORGANIZACIONAL HACIA LA SOSTENIBILIDAD

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    Patricia Ingrid,Keller

    2012-06-01

    Full Text Available La implementación de estrategias empresariales que construyen valor a lo largo de la cadena productiva de bienes y servicios y simultáneamente contribuyen a la sostenibilidad es uno de los temas más difíciles de abordar en la práctica. Por eso, para el presente trabajo se investigaron las estrategias posibles, identificando aquellas opciones que permiten lograr integrar las dimensiones de la sostenibilidad al desarrollo organizacional desde una perspectiva sistémica, así como sus posibilidades y limitaciones. Las actividades características de las cinco opciones posibles – control de riesgos, construcción de imagen y reputación, productividad y eficiencia, innovación y desarrollo de mercados – pueden implementarse de forma pura, combinada o sucesiva. De esta manera se pueden construir ventajas competitivas en el marco de la sostenibilidad, lo cual permite a la empresa lograr mayores posibilidades de éxito, no solo en el corto, sino también a mediano y largo plazo.

  4. Diferencias cualitativas entre experiencias tutoriales para opciones de aprendizaje universitario

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    Ángel J. LÁZARO MARTÍNEZ

    2008-01-01

    Full Text Available Se analiza la tutoría como elemento básico de la excelencia educativa, resaltando su carácter nuclear en todo proceso formativo institucionalizado. Se constata la relación entre los procesos educativos, la orientación y la tutoría, desde el nuevo enfoque de la auténtica orientación. En el contexto universitario se debaten sus competencias, destacando que, desde sus orígenes, la tutoría ha constituido el sentido de la función y el quehacer de la finalidad y optimización de la formación universitaria, tanto en la búsqueda del saber como en la pretensión de aplicación social. Esta situación aboca en el análisis de las opciones de la acción tutorial en la Universidad, sus modalidades y sus posibilidades de intervención, y se plantean, de forma más concreta, recogiendo las experiencias destacables en el ámbito universitario, las estrategias organizativas y de desarrollo en aulas y situaciones individualizadas.

  5. Aplicación de las opciones reales en la toma de decisiones en los mercados de electricidad

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    Felipe Isaza Cuervo

    2014-01-01

    Full Text Available Las decisiones estratégicas en los mercados de electricidad están sujetas a un alto riesgo e incertidumbre; en consecuencia, las opciones reales aparecen como una alternativa para la toma de decisiones en dichos mercados. En el presente artículo se realiza una revisión de literatura analizando y clasificando aplicacio- nes de opciones reales sobre decisiones de inversión, operación, y de políticas y programas energéticos. Además se presenta un ejemplo sintético de aplicación teórico utilizando un modelo binomial para incor- porar energía eólica en vez de térmica de acuerdo con la volatilidad de los precios del carbón. Se concluye que las opciones reales permiten tomar mejores decisiones que los métodos tradicionales, pues capturan a través de sus múltiples modelos las diferentes incertidumbres propias de estos mercados.

  6. Aplicación de las opciones reales en la toma de decisiones en los mercados de electricidad

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    Felipe Isaza Cuervo

    2014-10-01

    Full Text Available Las decisiones estratégicas en los mercados de electricidad están sujetas a un alto riesgo e incertidumbre; en consecuencia, las opciones reales aparecen como una alternativa para la toma de decisiones en dichos mercados. En el presente artículo se realiza una revisión de literatura analizando y clasificando aplicaciones de opciones reales sobre decisiones de inversión, operación, y de políticas y programas energéticos. Además se presenta un ejemplo sintético de aplicación teórico utilizando un modelo binomial para incorporar energía eólica en vez de térmica de acuerdo con la volatilidad de los precios del carbón. Se concluye que las opciones reales permiten tomar mejores decisiones que los métodos tradicionales, pues capturan a través de sus múltiples modelos las diferentes incertidumbres propias de estos mercados.

  7. Evaluación socioeconómica de proyectos con el método de opciones reales

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    Martin Guajardo Thomas

    2008-07-01

    Full Text Available Este trabajo de investigación analiza la aplicación de la teoría de Opciones Reales en la evaluación socioeconómica de proyectos de inversión pública en Chile, de manera de poder determinar sus condiciones de aplicación y limitaciones. Las técnicas tradicionales para evaluar alternativas de inversión, debido a su carácter estático, no capturan apropiadamente la incertidumbre inherente al proyecto, así como tampoco toman en consideración la capacidad que tiene un proyecto para adaptarse a escenarios futuros, es decir, su flexibilidad operativa.  Para corregir estas falencias surge una metodología complementaria llamada Opciones Reales, la cual es una analogía a las opciones financieras que permite reflejar numéricamente el valor de la flexibilidad de un proyecto bajo condiciones de incertidumbre; de esta manera, el método de opciones reales logra fundir la teoría financiera y la gestión estratégica de un proyecto, permitiendo mejores aproximaciones con respecto al valor real del proyecto. La aplicación del método de opciones reales en alternativas de inversión privada ha sido tema de numerosos trabajos e investigaciones, teniéndose un amplio conocimiento en relación a sus limitaciones y consideraciones; sin embargo, no existe claridad en cuanto a su aplicación en alternativas de inversión del sector público. Para llevar adelante esta investigación se desarrollaron, en una primera etapa, los conceptos básicos de la teoría de opciones reales y la evaluación socioeconómica de proyectos; posteriormente se presentan cuatro casos reales de estudio, previamente evaluados con el método tradicional del VAN, para posteriormente evaluarlos con el método de opciones reales según el método binomial con transformada logarítmica. Al comparar los resultados obtenidos con el método de opciones reales y los métodos tradicionales, se pudo comprobar que para todos los casos de estudio el valor arrojado por el método de

  8. El uso de opciones reales para la valuación de proyectos innovadores

    OpenAIRE

    Grassetti, Virginia; García Fronti, Javier

    2012-01-01

    El análisis se divide en tres secciones, en la primera se abordan los métodos de valuación de proyectos de inversión propuestos por la Teoría Neoclasista, reflejando sus limitaciones para adaptarse al mercado de tecnologías innovadoras. Luego, se presenta un enfoque de las Opciones Reales como la alternativa que mejor se adapta a las características propias de este nuevo mercado. Por último, se plantea un modelo sencillo que permite analizar las cuestiones más fundamentales de estas metodolog...

  9. Opciones reales, valuación financiera de proyectos y estrategias de negocios. Aplicaciones al caso mexicano

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    Francisco Venegas Martínez

    2006-01-01

    Full Text Available En este trabajo la metodología de opciones reales se presenta como un instrumento indispensable para que los consejos de administración de las empresas tomen decisiones respecto a proyectos de inversión o estrategias de negocios cuando existe la flexibilidad (opcionalidad de tomar en el futuro nuevas decisiones relacionadas con extender, contraer, posponer, enmendar o abandonar un proyecto o estrategia. Al respecto, el presente trabajo realiza una revisión de las diferentes fórmulas analíticas que aparecen en la bibliografía para valuar la opcionalidad de estrategias en el supuesto de que el valor presente de los flujos de efectivo esperados sigue una distribución log normal o bien mediante el uso de métodos de árboles binomiales. En particular, se trata el caso de la toma de decisiones de venta o cierre de una empresa cuando el valor de mercado de sus títulos (de capital y deuda excede el valor presente de los flujos de efectivo esperados o el valor presente de estos flujos es menor que cierto valor de recuperación. En este contexto se analiza el caso de una empresa mexicana de servicios satelitales de comunicación. Asimismo, se aplica la metodología de opciones reales a proyectos carreteros de inversión; específicamente se examina el caso del proyecto de construcción del primer tramo de la autopista Toluca-Atlacomulco según los supuestos de volatilidad constante y estocástica. Es también importante destacar que esta investigación se centra en: i la valuación de opciones reales americanas de abandono; ii valuación de opciones reales compuestas; iii valuación de opciones reales con volatilidad extendiendo el modelo de Hull y White (1987.

  10. El arrendamiento financiero y valuación de opciones reales

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    Gastón Silverio Milanesi

    2016-01-01

    Full Text Available El trabajo estudia diferentes opciones reales simples y compuestas contenidas en los contratos de leasing, bajo una metodología que combina el método de préstamo equivalente (MPE y opciones reales. Primero se presenta formalmente el MPE y el modelo binomial para valorar las opciones del contrato. Seguida- mente se analiza el valor al vencimiento de las opciones del leasing clasificadas en: a simple: de compra, de cancelar anticipadamente, de renovación y excluyente de renovación-compra, y b compuesta: a riesgo (venture ; canon atado a intensidad de uso (percentage y de pago diferido. Utilizando diferentes casos son valuadas las opciones combinando el modelo binomial y el MPE, estimando valor expandido y valor el valor de la opción sobre el valor. Finalmente se presentan las principales conclusiones.

  11. Opciones socio técnicas en la formación de campus virtuales en universidades argentinas

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    Luciana Guido

    2010-09-01

    Full Text Available Hoy en día, aproximadamente 65% de las universidades argentinas cuentan con un campus virtual. Este trabajoanaliza las estrategias desplegadas en los procesos de selección de diferentes opciones tecnológicas para la construcciónde campus virtuales en universidades nacionales argentinas. Se presenta la heterogeneidad de elementosoperantes a la hora de tomar decisiones acerca del tipo de plataforma utilizada (distribución “libre”, “propietaria” odesarrollo propio en función de los diferentes “modelos” de universidades y las definiciones sobre la innovación educativasustentada en la “virtualidad”. Se seleccionaron ocho casos de universidades nacionales basados en una muestrarepresentativa, en relación con el tipo de tecnología utilizada y con las características propias de cada universidad encuanto a sus proyectos fundacionales y sus propuestas “virtuales”. El estudio se centra en el análisis de fuentes deinformación secundaria (documentos institucionales de archivo, prensa nacional y local, resoluciones y normativa,sitios Web de las universidades y 30 entrevistas realizadas durante el periodo 2006-2008 a los gestores universitariosy empresas que prestan servicios a las iniciativas analizadas. La selección de las plataformas adoptadas muestra quelas opciones tecnológicas no se fundan solamente en cuestiones “estrictamente técnicas”, sino que también involucranaspectos organizacionales, cognitivos y culturales de las universidades analizadas.

  12. Influence of Si content on the intergranular corrosion of SUS 309L stainless steels

    International Nuclear Information System (INIS)

    Lin, D.-Y.; Chang, T.-C.

    2003-01-01

    The effect of Si content on the intergranular corrosion resistance of SUS 309L stainless steels was investigated by 10 wt.% oxalic acid test, 65 wt.% boiling nitric acid test, double loop electrochemical potential reactivation (DLEPR) method, optical microscope (OM) and scanning electronic microscope (SEM). A maximum corrosion rate, weight loss of 2.80 g m -1 h, was obtained when SUS 309L stainless steel containing 0.73 wt.% Si was subjected to heat treatment at 800 deg. C for 1 h. It shows that the Cr depletion zone formed due to σ phase precipitation. The same result is obtained in DLEPR test and the ditch microstructure after oxalic test was found in samples that showed the minimum corrosion rate

  13. Valuación de opciones simples y complejas contenidas en arrendamientos financieros

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    Gastón Silverio Milanesi

    2016-01-01

    Full Text Available El valor de los contratos de arrendamiento es una función del valor presente de los cánones más las opciones reales operativas. Sin embargo, el método del préstamo equivalente (MPE, con amplia aplicación en la valuación de arrendamientos, falla porque no incorpora las opciones contenidas en el contrato. De esta forma, el presente trabajo propone un modelo de valuación combinando el MPE y el enfoque binomial para valuar opciones reales. Para lograr lo anterior, se realiza el planteamiento matemático y su aplicación para opciones simples (compra, cancelación anticipada, renovación y compuestas (venture leasing, leasing a porcentaje, pago diferido, pago diferido y compra, demostrando la habilidad del modelo para calcular el valor actual expandido del contrato, como la suma del valor actual de pagos y opciones operativas.

  14. Valuación de opciones de tipo de cambio asumiendo distribuciones a-estables

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    Román Rodríguez Aguilar

    2013-01-01

    Full Text Available Este trabajo tiene por objetivo presentar la valuación de opciones europeas a través del método probabilista utilizando distribuciones α-estables como una alternativa de valuación de opciones en el mercado mexicano. El uso de estas distribuciones para la modelación de series financieras permite superar la principal debilidad de la valuación clásica que supone normalidad al captar los efectos de las colas pesadas y la asimetría propias de las series financieras. Uno de los principales resultados que se encontró se refiere a los diferenciales en la valuación de opciones entre ambos modelos y el efecto de los parámetros de la distribución en los precios; para mostrar esta diferencia, se realiza la valuación de una opción de compra y una opción de venta sobre el tipo de cambio peso-dólar. De igual forma se calcularon las medidas de sensibilidad básicas de las opciones (delta, gama y rho y se analizó el efecto del parámetro de estabilidad α en la volatilidad implícita de las opciones al asumir la valuación α-estable como el precio de mercado.

  15. EL MÉTODO DE DIFERENCIAS FINITAS EN EVALUACIÓN DE OPCIONES REALES THE FINITE DIFFERENCE METHOD IN REAL OPTIONS VALUATION

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    Sebastián Otero G

    2008-06-01

    Full Text Available Una respuesta a las falencias de los métodos tradicionales de evaluación de proyectos de inversión corresponde a la metodología de "Opciones Reales" que proviene del análisis de opciones sobre instrumentos financieros desarrollado en la década de los 70. Esta técnica, aplicada inicialmente a activos no financieros o reales, ha sido aplicada con singular éxito en la evaluación de proyectos de inversión y se presenta como una alternativa a los métodos de evaluación tradicionales, pues incluye tanto los aspectos estratégicos como de la teoría financiera. La variación fundamental que experimenta la evaluación de proyectos de inversión mediante opciones reales con respecto a la realizada mediante los métodos tradicionales es la incorporación de la incertidumbre y la flexibilidad como elementos que agregan valor al proyecto. En el presente este trabajo se realiza un recorrido del estado del arte en lo que respecta a la teoría de opciones reales para la evaluación de proyectos de inversión mediante diferencias finitas. Se describe la importancia de los componentes económicos y estratégicos a la hora de evaluar proyectos de inversión ante escenarios de incertidumbre, analizando las características de esta metodología, destacando sus virtudes y defectos e identificándose su aplicabilidad en la evaluación de proyectos de inversión. Finalmente se realiza una implementación del método de diferencias finitas implícitas (DFI para la evaluación de un caso real que cuenta con las opciones de esperar, abandonar, contraer, expandir y cambiar a mejor uso alternativo, evaluándose para todas las opciones y combinaciones de opciones posibles. Los resultados fueron comparados con la metodología tradicional (VAN y el árbol binomial con transformada logarítmica (ABTL. Ambas metodologías (DFI y ABTL entregan valores equivalentes, siendo ambos superiores a los obtenidos mediante la metodología tradicional (VAN, diferencia que

  16. Las pedagogías críticas: un lenguaje de la posibilidad para la universidad y sus maestros

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    Piedad Ramírez-Pardo

    2012-01-01

    Full Text Available El ensayo destaca los aportes de las pedagogías críticas para repensar el papel de la universidad y sus maestros en la sociedad. Reivindica la autonomía, la crítica, la libertad académica y la recuperación del maestro como intelectual transformativo, con capacidad para pensar la sociedad y construir un discurso que conjugue el lenguaje de la crítica con el de la posibilidad; maestros que se perciban a sí mismos con capacidad y opciones para enfrentar constructivamente la complejidad del mundo social y potenciar desde su rol, con sus estudiantes la transformación del orden establecido.

  17. Contabilización de Contratos de Futuros, Opciones, Forwards y Swaps (Accounting treatment for future, options, forwards and swap contracts

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    Vernor Mesén Figueroa

    2012-12-01

    Full Text Available Un entorno cada vez más dinámico y evolutivo ha dado paso al surgimiento y, por ende, al uso cada vez más frecuente de instrumentos financieros cuya flexibilidad y capacidad de ajuste a las condiciones de mercado permitan a las personas y empresas lograr sus objetivos de operación, inversión y financiamiento. En el contexto antes descrito, los contratos de futuros, opciones, forwards y swaps representan mecanismos cuyas características operativas permiten a sus tenedores el logro de objetivos alternativos tales como la cobertura eficaz de diferentes tipos de riesgos o la obtención de ganancias o pérdidas derivadas de la especulación. El presente artículo pretende reseñar, en forma breve, los mecanismos de operación de los contratos de futuros, opciones, forwards y swaps, para luego enfatizar en los criterios de contabilización que toda entidad o intermediario financiero debe seguir para reconocer los efectos que dichos tipos de contratos tienen sobre su posición financiera, resultados de operación y flujos de efectivo.   ABSTRACT A rapidly changing and evolving environment has given rise and increased the use of financial tools whose flexibility and adjusting capabilities to variable market conditions allow individuals and companies to achieve their operating, investment and financial goals. Within this framework, contracts for futures, options, forwards and swaps provide mechanisms with operating characteristics that allow their tenants to achieve alternative objectives such as the effective coverage of different risks or the attaining of profits or losses as a result of speculation. This article attempts to resume the operating mechanisms of futures, options, forwards and swap contracts and then concentrates into the accounting criteria that must be followed by financial intermediaries or entities to recognize the effects such contracts have on their financial position, operational results and cash flow.

  18. Opciones reales como respuesta ante la valoración con flujo de caja libre en situaciones de incertidumbre: Caso de la compra de maquinaria en una empresa colombiana de consumo masivo

    OpenAIRE

    Donato Valdés, Nathalie; Forero Díaz, Nicolás

    2017-01-01

    El alto grado de incertidumbre de la economía actual impone retos y riesgos a las finanzas corporativas de cualquier compañía -- Encontrar alternativas que permitan la flexibilización de los modelos de evaluación de proyectos empresariales se constituye, en este sentido, en una de sus máximas tareas -- Una de estas alternativas es el método de valoración por Opciones Reales -- El presente estudio aplica dicho método a un proyecto de inversión en innovación tomando el caso de la compra de una ...

  19. Real options as an alternative methodology to assess investment projects Las opciones reales como metodología alternativa en la evaluación de proyectos de inversión

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    Raúl Enrique Aristizábal Velásquez

    2012-12-01

    Full Text Available This paper aims to broaden the applicability of the assessment methodology of investment projects through real options as a key element for investment decision making. Traditional project valuation methodologies are described and their gaps, which special characteristic is uncertainty, are presented. A parallel between financial and real options that could be used for valuation is made, using the binomial tree method. Finally, a case study in the construction sector shows a project valuation using expand and waiting options.Este trabajo busca ampliar la aplicabilidad de la metodología de valoración de proyectos de inversión por medio de opciones reales como un elemento fundamental al momento de tomar una decisión de si se debe invertir o no. Se hace un recorrido por las técnicas tradicionales para valorar un proyecto de inversión y se plantean los vacíos que estos dejan, con respecto a proyectos en los que su principal característica es la incertidumbre. Se realiza un paralelo entre las opciones financieras y las opciones reales que per- mita valorar, utilizando la metodología de los árboles binomiales. Por último, se elabora un caso del que se plantea valorar una opción de espera y una opción de expandir de manera conjunta en el sector de la construcción.

  20. Opciones tipo barrera sobre la tasa de cambio Peso/Dólar

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    Ángela María Pérez Muñoz

    2007-12-01

    Full Text Available Este artículo es derivado de la investigación titulada Opciones tipo barrera sobretasa de cambio. Se realizó un examen de diversas metodologías existentes parala valoración y medición de los riesgos de las opciones tipo barrera europeas. Larevisión se centró, principalmente, en los métodos numéricos. Las SimulacionesMontecarlo constituyen una metodología para valorar y calcular las coberturas deopciones que dependen de la ruta seguida por los precios del activo subyacentedurante su vida útil. Los resultados generados corroboran que ellas convergensatisfactoriamente en la formulación analítica cuando ésta se ajusta a unaobservación discreta de los precios del activo subyacente. Tales resultados seajustan más cuando se aplica el Método de Control de Varianza de Variables Antitéticas a las Simulaciones Montecarlo. 

  1. Opciones reales aplicadas en redes integradas de servicios de salud empleando diferentes métodos de estimación de la volatilidad

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    Germán González-Echeverri

    2015-07-01

    Full Text Available El objetivo de este artículo es evaluar la posibilidad de expansión de una red integrada de servicios de salud mediante el uso de valoración por opciones reales. Para estimar el parámetro de volatilidad se estudian cuatro metodologías, dos de ellas son usadas en opciones reales las cuales se refieren a: Market Asset Disclaimer y Market Approach. Adicionalmente, las otras dos metodologías propuestas son empleadas en opciones financieras, las cuales son: volatilidad implícita del modelo de Merton y volatilidad implícita mediante Newton-Raphson. Los resultados muestran que la volatilidad estimada mediante las metodologías propuestas es similar a la obtenida por la metodología tradicional de Market Asset Disclaimer. La principal contribución de este artículo consiste en la construcción de la sonrisa de la volatilidad para opciones reales, que es fácil de implementar.

  2. Opciones reales aplicadas en redes integradas de servicios de salud empleando diferentes métodos de estimación de la volatilidad

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    Germán González-Echeverri

    2015-01-01

    Full Text Available El objetivo de este artículo es evaluar la posibilidad de expansión de una red integrada de servicios de salud mediante el uso de valoración por opciones reales. Para estimar el parámetro de volatilidad se estu- dian cuatro metodologías, dos de ellas son usadas en opciones reales las cuales se refieren a: Market Asset Disclaimer y Market Approach . Adicionalmente, las otras dos metodologías propuestas son empleadas en opciones financieras, las cuales son: volatilidad implícita del modelo de Merton y volatilidad implícita mediante Newton-Raphson. Los resultados muestran que la volatilidad estimada mediante las metodo- logías propuestas es similar a la obtenida por la metodología tradicional de Market Asset Disclaimer . La principal contribución de este artículo consiste en la construcción de la sonrisa de la volatilidad para opciones reales, que es fácil de implementar.

  3. El rol estratégico de las opciones reales

    OpenAIRE

    Orellana Villeda, José Giovanni

    2011-01-01

    El análisis del Real Options Approach o ROA como también serán llamadas adelante, establece, una forma de cómo determinar el valor de la flexibilidad en las decisiones futuras. Está herramienta sofisticada constituye, un soporte al presupuesto de capital la cual no ha sido completamente explotada, por los gerentes, debido, a diversos aspectos pedagógicos. Las opciones reales permiten estructurar el pensamiento de manera estratégica. Y es precisamente, este argumento que ha motivado el desarro...

  4. Ensayos sobre la sonrisa de volatilidad en mercados de opciones

    OpenAIRE

    Serna Calvo, Gregorio

    2011-01-01

    La tesis comienza analizando los determinantes de la "sonrisa de volatilidad" en el mercado de opciones sobre el indice IBEX-35,obteniendose evidencia de causalidad lineal en el sentido de Granger de los costes de transacción, representados por el diferencial "bid-ask" relativo, ala forma de la sonrisa. A continuación, se propone un modelo de Black-Scholes ampliando donde la volatilidad depende del precio de ejercicio y del diferencial "bid-ask" relativo, obteniendose que dicho modelo no mejo...

  5. Estratégias de produção de si e a humanização no SUS

    Directory of Open Access Journals (Sweden)

    Anita Guazzelli Bernardes

    Full Text Available O artigo visa a problematizar a relação entre as estratégias de produção de si e a Política Nacional de Humanização como um dos princípios do SUS no campo da saúde pública, assim como busca refletir a condição de existência da Humanização no campo da saúde coletiva. Para tanto, discutem-se as maneiras como essa política articula produções discursivas sobre o modo de subjetivação do indivíduo, os mecanismos de controle que intentam forjar modos que transcendem uma condição humana. Para produzir tal discussão, utiliza-se uma abordagem fundamentada em teóricos contemporâneos, principalmente os conceitos foucaultianos de tecnologias de si e modos de subjetivação, que entendem o discurso de forma a enaltecer não o que significa um conceito, mas sim, o que se produz a partir deste.

  6. Opciones vacunales contra los virus patógenos de porcinos PRRS y PCV2, un binomio frecuente

    Directory of Open Access Journals (Sweden)

    Marcos Cajero-Juárez

    2017-01-01

    Full Text Available En la última década, el síndrome reproductivo y respiratorio porcino (PRRS, por sus siglas en inglés y las enfermedades asociadas al circovirus porcino tipo 2 (PCV2, por sus siglas en inglés, representan una gran preocupación para la industria porcícola, debido a la afectación de los índices productivos. En consecuencia, su presencia va acompañada de cuantiosas pérdidas económicas. Actualmente, en la mayoría de los centros de producción, se utilizan vacunas clásicas, es decir, elaboradas a partir del virus completo viable ó atenuado. En relación al PCV2, se dispone de pocas vacunas de nueva generación, referidas como aquellas obtenidas a través de la tecnología del ADN recombinante, mientras que, únicamente vacunas clásicas están disponibles contra el virus PRRSV. En este manuscrito, revisamos la naturaleza de los virus PRRSV y PCV2, así también, resaltamos la importancia económica, de acuerdo a los datos de prevalencia nacional e internacional. Además, se incluyen datos de nuevas opciones vacunales, en relación con las vacunas comerciales que, en algunos casos, se ha documentado una baja protección contra cepas heterólogas y cepas de reciente aparición. Por un lado, la investigación en vacunas de nueva generación, ha tenido buena aceptación, debido a la posibilidad de seleccionar la información genética del virus para estimular la respuesta inmune protectora del hospedero y, por otro, porque se acelera el desarrollo de vacunas, e incluso, es posible evitar las infecciones de las cuales es responsable el virus vacunal.

  7. El enfoque de las opciones estratégicas de los actores en el estudio de las relaciones laborales

    Directory of Open Access Journals (Sweden)

    Carmen Marina López Pino

    2003-06-01

    Full Text Available El interés fundamental de este artículo es esclarecer la propuesta analítica desarrollada por el MIT (Massachussetts Institute of Technology, inspirada en el concepto de "opciones estratégicas" para el estudio de las relaciones laborales. De manera introductoria se plantea la problemática de las relaciones laborales actuales y los hallazgos fundamentales de las diferentes investigaciones del equipo del MIT. En segunda instancia se realiza una breve presentación del enfoque de sistemas de Dunlop que este equipo de investigadores busca superar. Seguidamente se exponen los principales conceptos y premisas del enfoque de las opciones estratégicas de los actores. Y, por último, se presentan brevemente algunas de las debilidades de dicha propuesta.

  8. Valuación financiera de proyectos de inversión en nuevas tecnologías con opciones reales

    Directory of Open Access Journals (Sweden)

    Francisco Antonio Álvarez Echeverría

    2012-01-01

    Full Text Available La valuación financiera de proyectos de inversión que involucran nuevas tecnologías requiere de cierto grado de flexibilidad en la implementación de estrategias futuras de negocio como son la expansión, contracción, posposición y abandono del proyecto; asimismo, incorporar la creciente incertidumbre que presentan las nuevas tecnologías a través de tasas de descuento que tengan una dinámica estocástica y que pueden ser simuladas con diversos modelos de tasas de interés como el de Vasicek y CIR que permiten hacer escenarios alternos para evaluar un proyecto de inversión. En este trabajo se desarrolla y aplica la metodología de opciones reales para la adopción de una tecnología del tipo Wi-Fi; para ello se considera una opción real de expansión con el objeto de estimar los flujos de efectivo esperados, así como la rentabilidad del proyecto dentro de un intervalo de tiempo determinado en comparación con la técnica tradicional del valor presente neto (VPN. La tasa de descuento utilizada en la valuación se desprende de la estructura de plazos estimada mediante los modelos Vasicek (1977 y CIR (1985. Los resultados de la valuación reflejan que desde el tercer periodo los flujos de efectivo con opciones reales son positivos, mientras que el VPN lo hace hasta el séptimo periodo, situación que incrementa la probabilidad de tener un VPN negativo que rechace el proyecto, a pesar de que éste tiene viabilidad financiera, si incorporamos el valor de la flexibilidad en el proyecto, el cual no es cuantificado por las técnicas tradicional como el VPN; por lo tanto, se debe complementar el análisis incluyendo una opción real.

  9. La Eutonía-Sus Principios

    OpenAIRE

    Rovella, Adriana

    2008-01-01

    El presente trabajo pretende dar cuenta de la Eutonía como práctica corporal dando cuenta de sus objetivos y principios La Eutonía fue creada por Gerda Alexander.El término, del griego, Eu: bueno, óptimo-Tonus: tensión; expresa la idea de una tonicidad armoniosamente equilibrada en adaptación constante al estado o actividad del momento. Es una disciplina basada en la experiencia del propio cuerpo, que conduce a la persona hacia una toma de conciencia de si misma y propone un aprendizaje para ...

  10. El Método de Elementos Finitos en la Valoración de Opciones

    OpenAIRE

    Sanz Herranz, Héctor

    2016-01-01

    En este trabajo se expone una introducción a los conceptos propios de la teoría de valoración de derivados financieros prestando especial atención a las opciones. Asimismo, se presenta el método de los elementos finitos para la resolución de ecuaciones en derivadas parciales justificando su uso desde el marco teórico. Finalmente, se muestran sendos algoritmos del método en algunos problemas de valoración de derivados financieros. Grado en Matemáticas

  11. Modelos de valorización de opciones europeas en tiempo continuo

    Directory of Open Access Journals (Sweden)

    Villamil Jaime

    2006-08-01

    Full Text Available El clásico modelo de valoración de opciones europeas de Black y Scholes (1973 supone que los retornos logarítmicos de un activo financiero se distribuyen normalmente, no obstante varios estudios empíricos muestran, primero, que esta distribución puede ser asimétrica y tener “colas pesadas” y, segundo, que la varianza del precio del activo no es finita. Este artículo presenta la implementación numérica de tres modelos alternativos: elasticidad constante de la varianza (1976, jump-diffusion (1976 y volatilidad estocástica (1987.

  12. Improvement in the efficiency of amorphous silicon solar cells utilizing the optical confinement effect by means of a TiO2/Ag/SUS back-surface reflector

    Energy Technology Data Exchange (ETDEWEB)

    Okamoto, H; Hamakawa, Y

    1984-05-01

    A trial to improve the conversion efficiency of amorphous silicon (a-Si) solar cells was carried out utilizing the optical confinement effect for low energy photons near the optical band edge. For this purpose a TiO2/Ag/SUS (where SUS represents high grade mirror etched stainless steel) highly reflective semitextured substrate acting as a light scatterer was developed. Inverted-type a-Si solar cells fabricated on this substrate exhibit a remarkable increase in the carrier collection efficiency in the spectral region just above the optical energy gap of a-Si. The increase in J(sc) was about 20 percent compared with that of a cell on a conventional SUS substrate. Using this substrate, a conversion efficiency of more than 9 percent was attained. 16 references.

  13. Options for rural electrification in Mexico; Opcion para la electrificacion de pequenas comunidades rurales en Mexico

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez Vera, Jorge [Luz y Fuerza del Centro, S. A., Mexico, D. F. (Mexico)

    1994-12-31

    The paper summarizes the results obtained in the study carried out in communities of the Hidalgo State, localized in remote and of difficult access sites. In the study 19 different options, which are technically and economically feasible, from the stand point of commercialization and electrification of the same. The performance of these systems was evaluated with respect to their capability to satisfy 12 technical goals and 5 social-economical, as well as their environmental impact. An hybrid system based on photovoltaic cells, diesel or gasoline generator and a wind-power generator, we think is the recommended option for this type of communities. [Espanol] Este trabajo sintetiza los resultados de un estudio llevado a cabo en comunidades del estado de Hidalgo, localizadas en lugares remotos y de dificil acceso. En el estudio se analizaron 19 diferentes opciones que son factibles tecnica y comercialmente hablando para la electrificacion de las mismas. El comportamiento de estos sistemas fue evaluado con respecto a su capacidad para satisfacer 12 objetivos tecnicos y 5 socioeconomicos, asi como su impacto ambiental. Un sistema hibrido a base de celdas fotovoltaicas, generador a diesel o gasolina y generador eolico, creemos que es la opcion recomendada para este tipo de comunidades.

  14. Options for rural electrification in Mexico; Opcion para la electrificacion de pequenas comunidades rurales en Mexico

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez Vera, Jorge [Luz y Fuerza del Centro, S. A., Mexico, D. F. (Mexico)

    1993-12-31

    The paper summarizes the results obtained in the study carried out in communities of the Hidalgo State, localized in remote and of difficult access sites. In the study 19 different options, which are technically and economically feasible, from the stand point of commercialization and electrification of the same. The performance of these systems was evaluated with respect to their capability to satisfy 12 technical goals and 5 social-economical, as well as their environmental impact. An hybrid system based on photovoltaic cells, diesel or gasoline generator and a wind-power generator, we think is the recommended option for this type of communities. [Espanol] Este trabajo sintetiza los resultados de un estudio llevado a cabo en comunidades del estado de Hidalgo, localizadas en lugares remotos y de dificil acceso. En el estudio se analizaron 19 diferentes opciones que son factibles tecnica y comercialmente hablando para la electrificacion de las mismas. El comportamiento de estos sistemas fue evaluado con respecto a su capacidad para satisfacer 12 objetivos tecnicos y 5 socioeconomicos, asi como su impacto ambiental. Un sistema hibrido a base de celdas fotovoltaicas, generador a diesel o gasolina y generador eolico, creemos que es la opcion recomendada para este tipo de comunidades.

  15. EVALUACIÓN DEL MERCADO DE OPCIONES SOBRE TASAS DE CAMBIO: PERSPECTIVAS PARA UNA MEJOR UTILIZACIÓN

    Directory of Open Access Journals (Sweden)

    Iván Darío Ochoa

    2007-06-01

    Full Text Available Colombia debe contar con un mercado financiero acorde con las necesidades de la internacionaliza-ción de su economía. Para esto requiere desarrollar un mercado de derivados, y entre ellos el de opciones sobre la tasa de cambio peso/dólar, de modo que se aprovechen las ventajas de este instrumento, entre otros fines, para la cobertura del riesgo cambiario, cada vez más latente en un mundo globalizado. Las opciones financieras son poco conocidas en Colombia y sobre ellas se tiene muy poca información. Puesto que no hay un mercado organizado, se transan sólo en el mercado extrabursátil (OTC, el cual, si bien es cierto que implica mayor riesgo de contraparte, también permite el diseño de coberturas a la medida de las necesidades del cliente. Con la globalización de la economía y el paso a un régimen de tasa de cambio flotante, se han presentado apreciaciones del peso frente al dólar en los últimos años que alcanzan el 25%, lo que ha implicado grandes pérdidas para el sector exportador colombiano. Estos hechos deberían impulsar a quienes participan en el mercado externo, en cualquier modalidad, a desarrollar una cultura de gestión del riesgo cambiario para prevenir pérdidas futuras por exposición a la volatilidad de la tasa de cambio. No obstante, se evidencia que, por diversos motivos, no se ha dado un amplio desarrollo de esa cultura, y son precisamente esos motivos los que se investigaron con las mayores empresas exportadoras/importadoras del país y se analizan en este artículo. Las investigaciones sobre los aspectos mencionados complementadas con el estudio de las variables que afectan la valoración de las opciones en el mercado financiero permiten formular algunas conclusiones sobre las principales razones para que no exista una fuerte cultura de cobertura del riesgo cambiario, a pesar de que la amenaza de este riesgo es creciente, de por qué el mercado de las opciones sobre tasa de cambio es de tan poca profundidad hoy

  16. Calculo y comparacion de la prima de un reaseguro de salud usando el modelo de opciones de Black-Scholes y el modelo actuarial

    Directory of Open Access Journals (Sweden)

    Luis Eduardo Giron

    2015-12-01

    Full Text Available La presente investigación pretende calcular y comparar la prima de un reaseguro  usando el modelo de opciones de Black-Scholes y el modelo clásico actuarial tradicional. El período de análisis va desde enero de 2011 hasta diciembre de 2012. Los resultados obtenidos muestran que el modelo de Black-Scholes, que se utiliza normalmente para valorar opciones financieras, puede ser también usado para la estimación de primas de reaseguros de salud; y que la prima neta estimada a partir de este modelo se aproxima a las establecidas por el método actuarial, excepto cuando el deducible del reaseguro es muy alto (por encima de $200.000.000.

  17. Hijos adultos mayores al cuidado de sus padres, un fenómeno reciente

    Directory of Open Access Journals (Sweden)

    P. Beatriz Zegers, PS.

    2012-01-01

    Full Text Available Es un hecho inédito en la historia de la humanidad que hijos que han llegado a la ancianidad cuiden de sus padres. Se mostrarán las particulares vicisitudes y desafíos que se plantean en el seno de la familia extensa cuando se trata de hijos adultos mayores quienes asumen la tarea de cuidar a sus padres, ya que éstas difieren de aquellas que se formulan cuando los hijos se encuentran en la adultez media. Si bien muchas familias se adaptan sin grandes sobresaltos a esta transición biográfica, otras se enfrentan a auténticas crisis. Distinguirlas puede ayudar a los profesionales de salud a manejar de mejor modo a sus pacientes y también ayudar a quienes se encuentran abocados a esta tarea.

  18. Representaciones y sus impactos: el caso de los lacandones en la Selva Lacandona

    Directory of Open Access Journals (Sweden)

    Tim Trench

    2005-02-01

    Full Text Available Las representaciones “positivas” de los lacandones les ofrecen ventajas claras a corto plazo, confiriendo cierto capital simbólico y político en sus relaciones con foráneos y en sus diversas luchas, además de variados beneficios económicos. Pero, a final de cuentas, es cuestionable si su imagen como pueblo “originario” y conservacionista “innato” les ayude en el largo plazo, ya que forma parte de un discurso fundamentalmente colonialista y puede limitar las oportunidades de las comunidades lacandonas a decidir su futuro y definir el carácter de su inserción en la sociedad nacional.

  19. Milpa y capitalismo: opciones para los campesinos mayas yucatecos contemporáneos

    Directory of Open Access Journals (Sweden)

    Manuel Martín Castillo

    2016-07-01

    Full Text Available La mayoría de los mayas yucatecos contemporáneos vive en la pobreza. El eje de su economía y cultura es la agricultura de milpa, que los jóvenes no encuentran atractiva como opción económica. La teoría económica convencional explica la pobreza por la escasez de capital, el uso de tecnologías obsoletas y la baja productividad. Aunque se concibe como un sistema productivo arcaico, la milpa tiene características para explorar opciones de vinculación entre las economías campesina y capitalista, para mejorar las condiciones de vida de los campesinos y contribuir al desarrollo de su cultura en el actual contexto de globalización económica.

  20. Evaluación económica de proyectos de inversión basada en la teoría de opciones reales

    Directory of Open Access Journals (Sweden)

    Ignacio Andres Garrido Concha

    2003-07-01

    Full Text Available En la presente investigación se analiza un nuevo enfoque, basado en la aplicación de la Teoría de Opciones Reales para realizar la evaluación económica de proyectos de inversión. El mismo, posee el potencial de entregar una aproximación del valor de la flexibilidad que posee un proyecto, permitiendo al evaluador capturar numéricamente el valor de la estrategia. El objetivo fundamental de la presente investigación fue proponer una “Metodología de Evaluación Económica de proyectos de inversión a partir de la Teoría de Opciones Reales”, con el fin de presentarla como una herramienta de evaluación alternativa a los métodos tradicionales. A modo de aplicación de esta metodología, basada en el Método Binomial con Transformada Logarítmica, se realizó la evaluación económica de distintos proyectos reales los cuales corresponden a distintas variaciones del proyecto “Implementación de un Sistema de Información Geográfica (SIG para controlar la cartografía de las plantaciones pertenecientes a Forestal Mininco S.A” estudiadas previamente por Julio Becker.  

  1. Pagos basados en acciones: concepto, ámbito de ap licación y metodologías de valoración

    Directory of Open Access Journals (Sweden)

    Vernor Mesén Figueroa

    2010-01-01

    Full Text Available La constante evolución de las prácticas empresariales ha hecho que los gerentes y administradores de las empresas, hayan optado por crear novedosas opciones por medio de las cuales puedan interactuar con terceras partes, es así como surgen los pagos basados en acciones, mecanismo que resulta ser una interesante opción por medio de la cual las entidades logran no sólo remunerar de forma atractiva y competitiva a sus empleados y proveedores, sino que también les permiten la oportunidad de establecer vínculos de largo plazo con estos, condición que finalmente resulta ser uno de sus factores claves para el éxito empresarial. En la práctica, los pagos basados en acciones pueden ser realizados por una empresa entregando de forma directa a sus colaboradores y suplidores de bienes y servicios acciones u opciones para la adquisición futura de acciones, lo anterior a cambio del logro de los objetivos propuestos por la empresa. Como es de suponer los objetivos cuyo cumplimiento da origen a los pagos basados en acciones son tan diversos como los son la naturaleza de cada entidad y por ende las condiciones específicas pactadas en cada uno de los acuerdos suscritos entre esta y sus empleados y proveedores. Considerando lo expuesto en los párrafos precedentes, el presente artículo tiene como objetivo abordar las generalidades del concepto de pagos basados en acciones así como el reseñar cuáles son los ámbitos en que dicho instrumento financiero es más comúnmente utilizado por los altos mandos empresariales. Como complemento de lo anterior, este artículo estudia los diferentes modelos que una entidad puede utilizar para determinar el costo financiero en que ésta debe incurrir cuando promueve un programa de pagos basados en acciones a favor de sus empleados, sus proveedores o ambos. Es así como mi estudio abarca el análisis de los diferentes métodos que existen para la valoración tanto de acciones como de las opciones que una entidad

  2. Gestión Integral en los Procesos Administrativos y Financieros de la Escuela Particular Nuestro Mundo Eco Rio de la Ciudad de Riobamba y su Incidencia en la Calidad de Prestación de Servicios Educativos Periodo 2013

    OpenAIRE

    Torres Peñafiel, Marinella Monserrath

    2015-01-01

    La Sección Quinta de la Constitución del Estado, en el artículo 29 establece. Las madres y padres o sus representantes tendrán la libertad de escoger para sus hijas e hijos una educación acorde con sus principios, creencias y opciones pedagógicas. Garantizando como alternativa la educación particular. Artículo 56. Las instituciones educativas particulares están constituidas y administradas por personas naturales o jurídicas de derecho privado, podrán impartir educación en todas las modalidad...

  3. La Educación Social en las políticas públicas de bienestar: programas, experiencias e iniciativas pedagógico-sociales en los servicios sociales comunitarios

    OpenAIRE

    Varela Crespo, Laura

    2013-01-01

    La Tesis responde a un propósito fundamental: describir y valorar el quehacer socioeducativo de los servicios sociales comunitarios en tres municipios de Andalucía (San Juan de Alfarache), Cataluña (San Adriá de Besós) y Galicia (Culleredo), analizando los programas que promueven y el perfil profesional de los/as educadores/as sociales, tanto en sus planteamientos teóricos como en sus opciones metodológicas.

  4. Dolarización, caja de conversión o tipo de cambio flexible. ¿Opciones para América Latina hoy?

    Directory of Open Access Journals (Sweden)

    Esmeralda Villegas

    2002-01-01

    Full Text Available El objetivo del presente artículo es el de describir las diferentes opciones de regímenes cambiarios para los mercados emergentes de América Latina; que van desde el tipo de cambio fijo, al flexible; con sus variantes como son la Caja de Conversión y la dolarización de la economía, en el contexto actual caracterizado por situaciones de persistente volatilidad de capital y crisis cambiaria. Se concluye que existen hoy más argumentos en contra de establecer durante mucho tiempo regímenes de tipo de cambio fijo, no solamente debido a las distorsiones y costos de la sobrevaluación de la moneda nacional, sino también por los costos que entraña su abandono, asimismo habría que sopesar los argumentos en contra de una excesiva flexibilidad que devendría en volatilidad del tipo de cambio; para ello cabe dar un espacio a que la autoridad pública intervenga, dando con su intervención una señal del tipo de cambio real que se considera conveniente, y reafirmar la importancia de desalentar los flujos de capitales externos especulativos. Se destaca con respecto a la proposición de la Caja de Conversión o de la Dolarización que son alternativas que privilegian la estabilidad monetaria, sacrificando otros objetivos macroeconómicos como el de la producción, el comercio, el empleo. Por lo cual es necesario actuar sobre determinantes fundamentales como son la disciplina fiscal, el avance en las reformas económicas; impulsando el progreso tecnológico que consiste en hacer más eficiente los procesos productivos a través de la inversión en tecnologías de punta.

  5. Valor en riesgo para un portafolio con opciones financieras Value at risk for a financial portfolio with options

    Directory of Open Access Journals (Sweden)

    Carlos Alexánder Grajales Correa

    2010-07-01

    Full Text Available En este artículo se presentan y aplican diferentes formulaciones matemáticas, exactas y aproximadas, para el cálculo del valor en riesgo (VaR de algunos portafolios con activos financieros, haciendo especial énfasis en aquellos que contienen opciones financieras. El uso y pertinencia de tales formulaciones es analizado según las características e hipótesis que se tengan de los portafolios construidos, para lo cual se analizan en detalle la volatilidad y el percentil de la distribución de los cambios en el valor del portafolio, al igual que la volatilidad estocástica en un horizonte de tiempo dado. Para éste fin, se consideran los métodos de varianzas y covarianzas, simulación histórica y simulación Monte Carlo, desde una perspectiva formal y ampliada a portafolios que contienen opciones financieras, estableciendo algoritmos alternativos de cálculo y comparaciones entre los resultados.This article presents and applies different mathematical, exact and approximated formulations to estimate value at risk of some portfolios with financial assets, emphasizing on those which contain financial options. The use and appropriateness of such formulations is analyzed base don characteristics and hypothesis of constructed portfolios. With this purpose, volatility and distribution percentile of changes in the value of the portfolio are analyzed. Stochastic volatity at a given time is also analyzed. With this purpose, variances, and co-variance methods. Historic simulation and Monte Carlo simulation from a formal and extended perspective to portfolios containing financial options are taken into consideration, establishing alternative of calculation and comparison between the results.

  6. Study for obtaining a suppressor device of transients using the Al/SRO/Si structure; Estudio para la obtencion de un dispositivo supresor de transitorios utilizando la estructura Al/SRO/Si

    Energy Technology Data Exchange (ETDEWEB)

    Marin Ramos, Heriberto

    1999-06-01

    transitorios de voltaje. En este trabajo se presenta la estructura Aluminio/Oxido rico en Silicio/Silicio como otra opcion en el campo de los dispositivos supresores de transitorios. Algunos dispositivos utilizados en la supresion de transitorios de voltaje son: varistores de oxido de zinc, varistores de carburo de silicio, celdas de selenio, diodos zener, etcetera. La estructura AI/SRO/Si presenta propiedades conductoras debido a la presencia de exceso de silicio en la pelicula de SRO. Variando la razon de gases reaccionantes (Ro=N{sub 2}O/SiH{sub 4}) durante el crecimiento de la pelicula de Oxido Rico en Silicio (SRO, por sus siglas en ingles), se puede variar la conductividad del material. El SRO resulta de mucha importancia para el dispositivo supresor de transitorios que se pretende obtener en el presente trabajo debido a su comportamiento no-ohmico. El dispositivo AI/SRO/Si se comporta de varias maneras dependiendo de las caracteristicas del SRO y del sustrato de silicio. Se ha encontrado que uno de estos comportamientos es como un supresor de transitorios de voltaje. Verificando su comportamiento como supresor de transitorios, se estudiaron los efectos del espesor de la pelicula, del area y del exceso de silicio del dispositivo, para lo cual se obtuvo la caracteristica I-V, y la obtencion de algunos parametros en c.d. En el presente trabajo el SRO se obtuvo mediante LPCVD (Low Pressure Chemical Vapor Deposition), inicialmente se realizo una caracterizacion C-V para obtener parametros indicativos del exceso de silicio, tales como: permitividad de la pelicula de SRO. Tambien se obtuvo el indice de refraccion, el cual es un parametro indicativo de la presencia de exceso de silicio. Una vez teniendo la certeza de la presencia de exceso de silicio se procedio a obtener la caracteristica I-V de la estructura AI/SRO/Si como dispositivo. Se analizo el comportamiento de la estructura AI/SRO/Si con diferentes parametros, tales como: Ro, espesor de SOR, areas.

  7. Retribución de directivos basada en opciones y comportamiento frente al riesgo =Option-based executive compensation and risk-taking behavior

    OpenAIRE

    Belda Ruiz, María

    2015-01-01

    La retribución de directivos basada en opciones, comúnmente conocidas como stock options, proporciona incentivos para modificar el perfil de riesgo de la empresa a través de la sensibilidad de la riqueza del directivo a las variaciones en el precio de las acciones de la empresa (delta) y a la volatilidad implícita negociada en el mercado (vega). El objetivo de esta Tesis Doctoral es analizar en detalle estos niveles de incentivos, delta y vega, a través de modelos de valoración que se adaptan...

  8. Modelo para la selección de opciones estratégicas en el sector de textiles de uso técnico

    OpenAIRE

    Detrell Domingo, Ariadna

    2007-01-01

    El objeto de la tesis es establecer una sistemática para la detección de oportunidades estratégicas dentro del sector de textiles de uso técnico. Desde esta perspectiva, se analizan diversos modelos conceptuales para la selección de opciones estratégicas, para definir uno de nuevo adecuado a la idiosincrasia del sector industrial textil. El modelo conceptual a definir es ecléctico porqué utilizará algunas de las herramientas habitualmente empleadas para el análisis estratégico interno y exter...

  9. Implementación de un EVEA institucional para enriquecer la enseñanza de pregrado, grado y posgrado de la UNTDF

    OpenAIRE

    Depetris, Beatriz O.; Zangara, María Alejandra; Feierherd, Guillermo Eugenio; Pendenti, Horacio; Rodríguez, Juan Manuel; Romano, Lucas; Blanco, Claudio; Rojas, Sergio

    2017-01-01

    Los Sistemas de Administración del Aprendizaje (LMS, por sus siglas en inglés) o EVEAs (Entornos Virtuales de Enseñanza y de Aprendizaje) utilizados en sus inicios para resolver los problemas que planteaba la Educación a Distancia, fueron rápidamente adoptados para complementar la Educación Presencial, dando origen a diferentes modalidades que extienden las posibilidades del aula presencial, incorporando opciones de enseñanza mediadas por las herramientas ofrecidas en estos entornos. En es...

  10. Alcoholic fermentation: an option for renewable energy production from agricultural residues; Fermentacion alcoholica: una opcion para la produccion de energia renovable a partir de desechos agricolas

    Energy Technology Data Exchange (ETDEWEB)

    Vazquez, H. J [Universidad Autonoma Metropolitana (Mexico)]. E-mail: hjv@correo.azc.uam.mx; Dacosta, O [Oficina de Consejo, Desarrollo y Transferencia Tecnologica, Dijon (Francia)]. E-mail: statfor@yahoo.com

    2007-10-15

    Biotechnology offers several options for generating renewable energy. One of these technologies consists on producing bioethanol by fermentation. Bioethanol is mainly used to prepare fuel for motor vehicles. This paper presents a proposal to produce such as fuels with a hundred liters experimental fermentation pilot unit. Results derived from essays are similar, in terms of yield and productivity, to those presented by other systems, if we take into account that our unit works under non sterile conditions, which represents significant energy savings. This technology does not require specialized knowledge for its construction and it would accessible to groups of Mexican farmers. [Spanish] La biotecnologia ofrece diversas opciones para la generacion de energias renovables. Una de ellas es la produccion de bioetanol, el cual se obtiene mediante fermentacion. El bioetanol se usa en la preparacion de carburantes para vehiculos automotores. En este articulo se presenta una propuesta para la obtencion de este combustible mediante una unidad de fermentacion piloto experimental de 100 litros. Los resultados de nuestros ensayos, en rendimiento y productividad, son similares a los de otros laboratorios si se considera que esta unidad piloto funciona en condiciones no esteriles, lo que representa como ventaja un ahorro de energia no despreciable. Ademas, la tecnologia no requiere conocimientos especializados para su realizacion y estaria al alcance de grupos campesinos mexicanos.

  11. Las relaciones especiales de sujeción entre el Estado y sus funcionarios

    Directory of Open Access Journals (Sweden)

    Luis Eduardo Ardila Quiroz

    2012-01-01

    Full Text Available Este escrito hace alusión a relaciones que existe entre el Estado y sus funcionarios, desde la obediencia en Grecia, hasta la connotación que adquiere el servidor público en el Estado Social de Derecho; y a su vez, las de estos para con sus asociados, pues bien sabido es que quienes sostienen al Estado y a todo el personal necesario para la exteriorización de aquel, son quienes pagan impuestos y contribuyen para que el presupuesto de gastos en bienes y servicios lleguen a buen puerto.Así como existen obligaciones por parte del Estado, también existen deberes que cumplir por parte de quienes lo habitan, por eso es de obligatorio cumplimiento, so pena de incurrir en un delito, el pago de contribuciones a favor del Estado, pero para que las erogaciones por parte del Estado hacia su población tengan la teleología o el fin propuesto, es necesario de una buena administración, si ello no acontece, se pierde la filosofía de las buenas maneras.

  12. Negativismo mediático y campaña electoral en las Elecciones Generales de 2008

    Directory of Open Access Journals (Sweden)

    Antón R. Castromil

    2012-01-01

    Full Text Available Este trabajo pretende entender el modo de actuar de la prensa de referencia española en el contexto de unas elecciones muy concretas: Las Elecciones Generales de 2008. Para ello, hemos analizado la cobertura de parte de la prensa de referencia (El País, El Mundo y Abc para comprobar si la selección de temas (agenda setting y su encuadre (framing tuvo una intención política y estratégica, además de meramente informativa. La prensa dispone, por lo menos, de dos opciones en el contexto de unas elecciones: presentar a sus lectores una cobertura más bien neutral o, por el contrario, teñirla de un claro partidismo. Nuestros datos indican que ha sido esta última la opción mayoritaria, tomando, además, la vía del ataque al adversario.

  13. La producción social de los hábitos alimenticios. Una aproximación desde la sociología del consumo

    Directory of Open Access Journals (Sweden)

    Entrena-Durán Francisco

    2013-01-01

    Full Text Available Los seres humanos producen socialmente sus hábitos alimenticios, los cuales, por lo tanto, como cualquier otra producción humana, están sujetos al cambio social. El objetivo prioritario de este artículo es aproximarse, desde la sociología del consumo, a las cambiantes circunstancias sociales en las que acontece la producción de tales hábitos a medida que las sociedades se modernizan y globalizan. Particularmente, se muestra como, en las actuales circunstancias de creciente influencia de los medios mundiales de comunicación, las prácticas de producción y las opciones de consumo alimenticio experimentan tendencias hacia su masificación y estandarización planetarias. Sin embargo, se observan diferentes percepciones sociales sobre la alimentación y las opciones con respecto a ella, tal y como corresponde a la diversidad de ideas acerca de la salud y del cuerpo ideal que tienen las personas en función de sus distintas posiciones socioeconómicas y trayectorias de socialización alimentaria.

  14. Escolhas Contábeis: reflexões para a pesquisa

    Directory of Open Access Journals (Sweden)

    Denise Mendes da Silva

    2016-01-01

    Full Text Available En este ensayo se promueve una discusión crítica de las teorías y de las principales obras que tratan el estudio de opciones de contabilidad, con el fin de generar provocaciones y reflexiones para el desarrollo de la investigación sobre este tema. La literatura de la zona ofrecieron contribuciones en los últimos años, sin embargo, cuestiones como la existencia de una teoría consolidada de opciones de contabilidad y determinantes de múltiples opciones de contabilidad aún no están claras. Las principales aportaciones de este estudio son: proporcionar una triangulación teórica de las discusiones sobre la base de la Teoría de los contratos de la empresa en las teorías económicas que sustentan la llamada ‘Teoría positiva de la contabilidad’ y la Teoría Institucional; y proponer reflexiones para el estudio de los múltiples factores determinantes y las consecuencias económicas de las opciones de contabilidad, utilizando diferentes enfoques metodológicos. Se cree que los amarres teóricas e hipotéticas (así como sus limitaciones derivados de la interacción entre las teorías aquí criticadas puede despertar la necesidad de reestructuración de la investigación sobre las opciones de contabilidad, tanto en términos teóricos y metodológicos.

  15. La valoración de proyectos de energía eólica en Colombia bajo el enfoque de opciones reales.

    OpenAIRE

    Maya Ochoa, Cecilia; Hernández Betancur, Juan David; Gallego Múnera, Óscar Mauricio

    2012-01-01

    Este estudio explora diferentes metodologías de valoración de proyectos de generación de energía eólica en Colombia. Inicialmente se valora con base en flujos de caja descontados, luego se aplica el enfoque de opciones reales, estimando su valor extendido, incluida una opción real de expansión. Para estimar la volatilidad, parámetro fundamental de la valoración de la opción real, se simulan los procesos que siguen las variables con alta incidencia en ella, como el precio de la energía y los v...

  16. Asimetría y curtosis en el modelo binomial para valorar opciones reales: caso de aplicación para empresas de base tecnológica

    OpenAIRE

    Gastón Silverio Milanesi

    2013-01-01

    El trabajo propone un modelo de valoración de opciones reales con base en el modelo binomial utilizando la transformación de Edgeworth (Rubinstein, 1998) para incorporar momentos estocásticos de orden supe- rior, especialmente para ciertos tipos de organizaciones, como empresas de base tecnológica, donde no se dispone de cartera de activos financieros gemelos, comparables de mercado y procesos estocásticos no gaussianos. Primero, se presenta el desarrollo formal del modelo, luego su aplicació...

  17. Dramas coreanos en Colombia: una reflexión desde sus contenidos y otras formas de narrativas

    OpenAIRE

    Zarco Quintero, Liz Andrea

    2016-01-01

    Este artículo propone una reflexión teórica a partir de la descripción de las características que definen la popularidad de los dramas coreanos en Colombia, en relación con sus contenidos y narrativas. Se plantea que para entender su popularidad, es necesario analizar su discurso televisivo a la luz de las culturas mediáticas, las lógicas del entretenimiento, y de la disyuntiva entre su género y formato. A su vez, se concluye que no son telenovelas en el sentido estricto de esta categoría, si...

  18. La expansión de la ciudad de Mexicali: una aproximación desde la visión de sus habitantes

    Directory of Open Access Journals (Sweden)

    Judith Ley García

    2011-01-01

    Full Text Available En el presente artículo se muestra la expansión urbana, como producto de los flujos de capital que arriban a los lugares, y modifican el territorio y la cotidianidad de quienes los habitan. El caso de estudio es la ciudad de Mexicali, cuya colindancia con Estados Unidos ha marcado una dinámica local y estructura espacial particulares. Si bien los registros sucesivos del crecimiento urbano son marcas legibles en el espacio físico, también forman parte de la memoria de los residentes quienes, desde su mirada, a través de la narración de sus experiencias y vivencias, permiten conocer los cambios en la ciudad, y además ofrecen la oportunidad de analizar la pertenencia e identificación de sus habitantes, en un sentido relacional e histórico.

  19. El sistema familiar mesoamericano y sus consecuencias demográficas

    Directory of Open Access Journals (Sweden)

    David Robichaux

    2002-01-01

    Full Text Available Los estudiosos de la familia residencial de las distintas disciplinas sociales en México no han tomado en cuenta las diferentes tradiciones culturales del país y han partido de un modelo de familia, como si México fuera un país homogéneo. El presente trabajo plantea el concepto de “sistema familiar mesoamericano”, que permite aprehender un tipo específico de ciclo de desarrollo de los grupos domésticos, característico de amplios sectores de la población rural de México. Uno de sus rasgos es la residencia virilocal, que favorece la formación de nuevas parejas sin necesidad de contar con vivienda propia. La consecuencia es una baja edad en el momento del matrimonio y el rápido crecimiento de la población, por lo que se puede hablar de un régimen demográfico asociado con este sistema familiar.

  20. Proteja a sus seres queridos de las quemaduras

    Centers for Disease Control (CDC) Podcasts

    Este podcast, que forma parte de la iniciativa Proteja a sus seres queridos, aborda las medidas que pueden tomar los padres para ayudar a proteger a sus niños de las quemaduras, una de las principales causas de lesiones infantiles.

  1. Microbiota intestinal en la enfermedad renal crónica

    Directory of Open Access Journals (Sweden)

    Secundino Cigarran Guldris

    2017-01-01

    En este artículo se revisan la situación de la microflora intestinal en la ERC, la alteración de la barrera intestinal y sus consecuencias clínicas, los efectos deletéreos de las toxinas urémicas derivadas de la microflora intestinal, así como las posibles opciones terapéuticas para mejorar esta disbiosis y reducir las complicaciones de la ERC.

  2. La restauración de la arquitectura: cómo y por qué

    Directory of Open Access Journals (Sweden)

    Paolo B. Torsello

    2005-12-01

    Full Text Available En un alarde de extraordinaria claridad mental, el autor analiza el concepto de restauración desde sus presupuestos de partida, entendiendo la arquitectura concebida como artificio creado por el hombre, portadora de memoria y sujeta al paso del tiempo. El proyecto de restauración implica la introducción de un acto de voluntad entre muchas opciones posibles que debe velar por la pervivencia, la integridad y la refuncionalización de la obra, una triada en un comprometido ejercicio de equilibrio que implica el cumplimiento conjunto y equilibrado de sus tres componentes.

  3. El folklore y sus paradojas

    Directory of Open Access Journals (Sweden)

    HONORIO M. VELASCO MAILLO

    1990-01-01

    Full Text Available Uno de los rasgos más sobresalientes de la historia del folklore en España y otras naciones europeas son sus paradojas. Propuesto primero como ciencia ha llegado a ser claramente rechazado por posteriores ambientes científicos. Tendría interés hacer una historia social del folklore. Este artículo sugiere que tales paradojas y contradicciones están relacionadas con el paradigma científico que asumieron sus promotores, el evolucionismo cultural y con un concepto idealizado de "pueblo", que ayudaron a construir presentando colecciones de materiales. También analiza las diferentes funciones sociales que ha cumplido el discurso folklórico.

  4. Proteja a sus seres queridos de un ahogamiento

    Centers for Disease Control (CDC) Podcasts

    Este podcast, que forma parte de la iniciativa Proteja a sus seres queridos, aborda las medidas que pueden tomar los padres de familia para ayudar a proteger a sus niños de un ahogamiento, una de las principales causas de lesiones infantiles.

  5. Uso de las TIC en estudiantes de quinto y sexto grado de educación primaria

    Directory of Open Access Journals (Sweden)

    Marisol Villegas Pérez

    2017-03-01

    Full Text Available El propósito de este estudio es identificar la percepción de los alumnos de quinto y sexto de educación primaria, en escuelas públicas, sobre sus competencias en el uso de las tecnologías de la información y la comunicación (TIC e indagar si existen diferencias en cuanto al sexo y a tener computadora y acceso a internet en casa. La metodología fue cuantitativa no experimental transeccional y la muestra se conformó de 201 estudiantes de escuelas primarias públicas: 51.6% corresponde a alumnos de quinto y 48.4, de sexto; de estos, 52.6 eran niños y 47.4, niñas. Los instrumentos empleados fueron dos encuestas con escala tipo Likert con cinco opciones de respuesta. La primera encuesta midió el uso de las TIC en la vida diaria y la segunda, el uso de las TIC en la escuela. Los resultados muestran que los estudiantes hacen uso moderado de las TIC y no hay diferencias significativas en cuanto al sexo y a tener computadora en casa, o no, pero sí en el acceso a internet. El estudio concluye que los alumnos utilizan las TIC más para actividades de esparcimiento que para labores escolares y que sus competencias al respecto son limitadas.

  6. Proteja a sus seres queridos de las intoxicaciones

    Centers for Disease Control (CDC) Podcasts

    Este podcast, que forma parte de la iniciativa Proteja a sus seres queridos, aborda las medidas que pueden tomar los padres de familia para ayudar a proteger a sus niños de una intoxicación, una de las principales causas de lesiones infantiles.

  7. La estructura del fullereno C60 y sus aplicaciones

    OpenAIRE

    Vasilievna Kharissova, Oxana; Ortiz Méndez, Ubaldo

    2002-01-01

    Se revisan los datos reportados de una nueva clase de materiales basados en los fullerenos. Se explica la estructura del fullereno C60 y sus compuestos con metales alcalinos, sus propiedades y aplicaciones. Se señala que estos compuestos tienen propiedades de superconducción comparable con la de los tradicionales cupratos. Se indica que esta modificación del carbono puede formar nanotubos que tienen varias aplicaciones prácticas debido a sus propiedades.

  8. Las leyes especiales en la legislación mexicana, desde el respeto a los derechos humanos y sus garantías.

    OpenAIRE

    Valles Ruiz, Orietta

    2013-01-01

    La existencia en la legislación mexicana de dos leyes denominadas: Ley Federal Contra la Delincuencia Organizada y Ley Federal de Extinción de Dominio, constituyen el objetivo general de investigación de tesis, cuyos ordenamientos son violatorios de los derechos humanos y sus garantías. Si bien es cierto, que se establecieron en la Legislación mexicana, por considerarlas necesarias, para el combate a los delitos de delincuencia organizada, también es cierto que violan los derechos humanos, s...

  9. Los adolescentes latinos son más felices y saludables si sus familias adoptan ambas culturas (Latino teens happier, healthier)

    Centers for Disease Control (CDC) Podcasts

    2009-08-19

    Podcast para los padres latinos: Este podcast proporciona sugerencias a los padres de adolescentes latinos sobre lo que pueden hacer para ayudar a sus hijos a tener una vida más feliz y saludable.  Created: 8/19/2009 by Centro Coordinador de Salud Ambiental y Prevención de Lesiones (CCEHIP).   Date Released: 8/19/2009.

  10. Las flores del desierto. Opciones de vida en pueblos de la región central de Sonora

    Directory of Open Access Journals (Sweden)

    Ma. Amalia Gracia

    2014-01-01

    Full Text Available Aunque la búsqueda de las localidades rurales por generar opciones de vida se observa en el esfuerzo de algunos pobladores, en México la política pública se restringe a ofrecer garantías sociales; le deja al mercado la creación de alternativas económicas, que no alcanzan para producir desarrollo local y regional. El presente artículo reflexiona sobre esto, a partir de una iniciativa de trabajo asociativo surgida hace más de seis años en pueblos de la región central del norte de Sonora, y muestra cómo se resuelven temporal y dinámicamente las tensiones entre prácticas de cooperación y reciprocidad y las de intercambio con el mercado utilizando postulados teóricos de distintas disciplinas, retomadas por las propuestas de economía solidaria. El caso ilustra las dificultades, riqueza y potencialidad de iniciativas como ésta, y la importancia del apoyo gubernamental en localidades a las que la baja capacidad económica y la generalización del narcotráfico las vuelve frágiles para contrarrestar procesos profundos de despoblamiento.

  11. Strategies for sustainable households. The SusHouse project

    International Nuclear Information System (INIS)

    Vergragt, Ph.J.; Knot, J.M.C.

    2001-01-01

    The international SusHouse project has developed a strategy design approach that can contribute to major (factor 20) efficiency improvements in household activities. Stakeholder workshops have been held to develop scenarios for a sustainable future (2050). These scenarios were evaluated on their economic consequences, environmental impacts and consumer acceptance. the results were then used as the input for a second round of stakeholder workshops, which aimed at developing short-term strategies and implementation plans. This Research Note reviews the SusHouse approach and its results. It ends with suggestions for further steps to be taken. A SusHouse CD-ROM is available, containing all final project reports as well as a scenario presentation in the form of images and short texts. 22 refs

  12. Proteja a sus seres queridos de las lesiones viales

    Centers for Disease Control (CDC) Podcasts

    Este podcast, que forma parte de la iniciativa Proteja a sus seres queridos, aborda las medidas que pueden tomar los padres de familia para ayudar a proteger a sus niños de las lesiones viales, una de las principales causas de lesiones infantiles.

  13. Proteja a sus seres queridos de las quemaduras

    Centers for Disease Control (CDC) Podcasts

    2008-12-10

    Este podcast, que forma parte de la iniciativa Proteja a sus seres queridos, aborda las medidas que pueden tomar los padres para ayudar a proteger a sus niños de las quemaduras, una de las principales causas de lesiones infantiles.  Created: 12/10/2008 by National Center for Injury Prevention and Control (NCIPC).   Date Released: 4/1/2009.

  14. Proteja a sus seres queridos de un ahogamiento

    Centers for Disease Control (CDC) Podcasts

    2008-12-10

    Este podcast, que forma parte de la iniciativa Proteja a sus seres queridos, aborda las medidas que pueden tomar los padres de familia para ayudar a proteger a sus niños de un ahogamiento, una de las principales causas de lesiones infantiles.  Created: 12/10/2008 by National Center for Injury Prevention and Control (NCIPC).   Date Released: 4/1/2009.

  15. Proteja a sus seres queridos de las intoxicaciones

    Centers for Disease Control (CDC) Podcasts

    2008-12-10

    Este podcast, que forma parte de la iniciativa Proteja a sus seres queridos, aborda las medidas que pueden tomar los padres de familia para ayudar a proteger a sus niños de una intoxicación, una de las principales causas de lesiones infantiles.  Created: 12/10/2008 by National Center for Injury Prevention and Control (NCIPC).   Date Released: 4/1/2009.

  16. Eje Cafetero: fortaleza minero-industrial y posibilidades agropecuarias

    OpenAIRE

    Duque Escobar, Gonzalo

    2012-01-01

    Fortalezas del Eje Cafetero relacionadas con sus potencialidades agropecuario y valioso inventario minero, que le dan soporte a los elementos fundamenbtales del Plan Industrial Minero y a nuevas opciones de clústeres regionales agropecuarios, en momentos en los que se perfila un crecimiento de la oferta energética local en el oriente caldense y la implementación de modos de transporte más eficientes como la navegación por el río Magdalena.

  17. Machos a la media luz: miradas de una antropología impropia

    Directory of Open Access Journals (Sweden)

    Camilo Albuquerque de Braz

    2009-09-01

    Full Text Available La propuesta de este artículo es analizar, a partir del registro de datos de campo etnográfico, cómo operan de manera interseccionada los distintos marcadores de diferencia en clubes y bares de sexo para hombres en la ciudad de São Paulo, Brasil, y también en la producción de sus cuerpos como deseables y sujetos inteligibles. Estos lugares son ubicados, también, en un mercado más amplio de locales comerciales para encuentros sexuales entre hombres de la ciudad. Me interesa destacar las convenciones sociales que impregnan las prácticas corporales, sexuales y las opciones eróticas vividas en esos sitios, teniendo como punto de partida el cuestionamiento de las formas por las cuales ciertos estereotipos de lo que sería “la masculinidad” son dichos, significados, apropiados, corporeizados y se llevan a cabo en ellos. También propongo al final una reflexión sobre las opciones eróticas y las prácticas sexuales mencionadas aquí, lo que exige el cuestionamiento de la idea de erotismo expresada como concepto por teóricos/as como Georges Bataille. En esa tradición, el género es fijo y cristalizado, vinculado al dimorfismo sexual y a la asociación entre sexo/género y posiciones sexuales. El cuerpo "violado", el pasivo y penetrado, es "femenino" -al contrario de los "varones", "violadores", que penetran. Este diseño sustancializa lo erótico dentro de la matriz heterosexual, lo que impide pensar más allá o por fuera de los límites de sus normas. A la luz de algunas ideas post-estructuralistas sobre el género y la sexualidad, así como de la teoría queer, me pregunto si podríamos intentar deconstruir lo erótico en esos términos con el fin de interpretar, antropológicamente, las prácticas y los discursos aquí examinados como potencialmente transgresores.

  18. Re-evaluation of SiC permeation coefficients at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, Yasushi, E-mail: yama3707@kansai-u.ac.jp [Faculty of Engineering Science, Kansai Univ., Yamate-cho, Suita, Osaka 564-8680 (Japan); Murakami, Yuichiro; Yamaguchi, Hirosato; Yamamoto, Takehiro; Yonetsu, Daigo [Faculty of Engineering Science, Kansai Univ., Yamate-cho, Suita, Osaka 564-8680 (Japan); Noborio, Kazuyuki [Hydrogen Isotope Research Center, Univ. of Toyama, Toyama, Toyama 930-8555 (Japan); Konishi, Satoshi [Institute of Advanced Energy, Kyoto Univ., Gokasho, Uji, Kyoto 611-0011 (Japan)

    2016-11-01

    Highlights: • The deuterium permeation coefficients of CVD-SiC at 600–950 °C were evaluated. • The wraparound flow was reduced to less than 1/100th of the permeation flow. • CVD-SiC materials are very effective as hydrogen isotope permeation barriers. - Abstract: Since 2007, our group has studied the deuterium permeation and diffusion coefficients for SiC materials at temperatures above 600 °C as a means of evaluating the tritium inventory and permeation in fusion blankets. During such measurements, control and evaluation of the wraparound flow through the sample holder are important, and so the heated sample holder is enclosed by a glass tube and kept under vacuum during experimental trials. However, detailed studies regarding the required degree of vacuum based on model calculations have shown that the wraparound flow is much larger than expected, and so can affect measurements at high temperatures. We therefore modified the measurement apparatus based on calculations involving reduced pressure in the glass tube, and are now confident that the measurement error is only several percent, even at 950 °C. In this paper, recent experimental results obtained with a chemical vapor deposition (CVD)-SiC sample over the temperature range of 600–950 °C are presented, showing that the permeation coefficient for CVD-SiC is more than three orders of magnitude smaller than that for stainless steel (SS316) at 600 °C, and that at 950 °C, the coefficient for CVD-SiC is almost equal to that for SUS316 at 550 °C.

  19. Uma análise da progressividade do financiamento do Sistema Único de Saúde (SUS Analysis of the progressivity of Brazilian Unified National Health System (SUS financing

    Directory of Open Access Journals (Sweden)

    Maria Alicia Domínguez Ugá

    2006-08-01

    Full Text Available Este artigo analisa o grau de progressividade dos tributos que financiam o Sistema Único de Saúde (SUS. Nele são identificados os principais tributos que financiam o SUS e, com base nos microdados da Pesquisa de Orçamentos Familiares 2002-2003, é inferida a distribuição do ônus do pagamento dos tributos diretos e indiretos que financiam o SUS e analisado o grau de progressividade dos mesmos. Foi, ainda, calculado o índice de Kakwani do financiamento do SUS, que sintetiza o grau de progressividade de um sistema tributário. Os dados mostraram que o índice de Kakwani do financiamento público é de ­0,008 e que, portanto, o financiamento do SUS corresponde a um sistema quase proporcional, que onera proporcionalmente à renda. Em uma sociedade com o grau de desigualdade da brasileira, que exibe um índice de Gini de 0,57, ter um financiamento do SUS proporcional é fortemente questionável sob a ótica da justiça social: ao contrário, seria desejável construir bases de financiamento do SUS francamente progressivas, de forma a contra-restar a fortíssima concentração de renda da nossa sociedade.This article analyzes the level of progressivity in taxes financing the Brazilian Unified National Health System (SUS. Distribution of the tax burden financing the SUS was calculated using micro-data from the Household Budgets Survey, 2002-2003. The Kakwani index, which shows a tax system's level of progressivity, was calculated. The Kakwani index of public financing was -0.008, and SUS financing was nearly proportional to income. From a social justice perspective this is highly undesirable in a society like Brazil, with a Gini index of 0.57. The system should be clearly progressive in order to counterbalance the country's extreme income concentration.

  20. Estudio Cinemático Comparativo de Tres Opciones de Tratamiento Conservador en el Manejo de los Trastornos de la Marcha de Niños con Equinismo Idiopático

    OpenAIRE

    Lerma Lara, Sergio

    2016-01-01

    Tesis Doctoral leída en la Universidad Rey Juan Carlos de Madrid en 2016. Directores de la Tesis: Carlos Goicoechea García y Tomás Epeldegui Torre El equinismo idiopático es una alteración de la marcha pediátrica caracterizada por la realización de una excesiva flexión plantar del tobillo durante la marcha. No hay consenso en la literatura acerca de la mejor oferta terapéutica, coexistiendo opciones conservadoras y quirúrgicas en la práctica clínica. El objetivo de este t...

  1. El Estado sin territorio: La desaparición del territorio debido al cambio climático

    Directory of Open Access Journals (Sweden)

    Mariano J. Aznar Gómez

    2013-12-01

    Full Text Available Diversos y fundados análisis científicos demuestran que una de las derivadas del denominado “cambio climático” es el calentamiento global del planeta y, con él, la posible elevación significativa de los niveles de mares y océanos en el planeta. Ello podría suponer, en determinados casos, la desaparición bajo las aguas de amplias porciones del territorio de diversos Estados, muy particularmente de ciertos Estados archipelágicos del Pacífico que podrían ver, incluso, la total desaparición de sus espacios terrestres. Con ello desaparecería uno de los elementos constitutivos del Estado, cuestionándose entonces sus efectos en la soberanía e, incluso, en la propia existencia de dicho Estado. Quedaría igualmente afectado otro elemento de la estatalidad: la población, que podría verse desplazada conformando una nueva tipología de “desplazados climáticos”. El Derecho internacional actual ofrece diversas soluciones a dichos problemas, si bien parte de la adopción de esas soluciones implicarían la asunción de opciones políticas de cierta envergadura con efectos jurídicos reseñables. Este trabajo analiza parte de estas cuestiones, proponiendo algunas de las mismas como posibles soluciones a la posible alteración territorial o la desaparición de ciertos Estados debida al cambio climático.

  2. ElecSus: Extension to arbitrary geometry magneto-optics

    Science.gov (United States)

    Keaveney, James; Adams, Charles S.; Hughes, Ifan G.

    2018-03-01

    We present a major update to ElecSus, a computer program and underlying model to calculate the electric susceptibility of an alkali-metal atomic vapour. Knowledge of the electric susceptibility of a medium is essential to predict its absorptive and dispersive properties. In this version we implement several changes which significantly extend the range of applications of ElecSus, the most important of which is support for non-axial magnetic fields (i.e. fields which are not aligned with the light propagation axis). Supporting this change requires a much more general approach to light propagation in the system, which we have now implemented. We exemplify many of these new applications by comparing ElecSus to experimental data. In addition, we have developed a graphical user interface front-end which makes the program much more accessible, and have improved on several other minor areas of the program structure.

  3. Nuclear Power and Sustainable Development (Spanish Edition); Energia Nucleoelectrica y Desarrollo Sostenible

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2008-02-15

    crecientes de energia sin generar efectos colaterales negativos que amenacen el entorno vital de las generaciones futuras? La energia nucleoelectrica no es una panacea: es una opcion que se combina con otras para dar respuesta a los problemas energeticos. Las expectativas acerca de la expansion del uso de la energia nucleoelectrica estan creciendo. Ademas del aumento de la demanda, estas expectativas tambien obedecen a la preocupacion por la seguridad energetica, asi como a la baja emision de gases de efecto invernadero en la generacion de energia nucleoelectrica y al solido historial de las centrales nucleares. Cada pais debe hacer sus propias opciones energeticas: no hay una medida que valga para todos. Pero para los paises interesados en incorporar la energia nucleoelectrica en sus estrategias de desarrollo sostenible es importante mantener abierta y accesible esa opcion energetica.

  4. El profesor universitario en Ciencias de la Información (Periodismo y sus actitudes

    Directory of Open Access Journals (Sweden)

    Dra. Pastora Moreno

    2000-01-01

    Full Text Available La autora parte de la base de que el profesor universitario es un profesional que realiza un servicio a la sociedad a través de la universidad, con su investigación y su docencia. Si el protagonista del proceso educativo es el educando, el mejor profesor no es el que mejor explica, sino el que, además, hace trabajar más a sus alumnos, el que mejor los estimula y orienta en su actividad. Su valor estriba en que a través de él, con su modo de ejercer la docencia, llegan al estudiante los estímulos adecuados para su mejor educación. Por tanto, debe ser competente en el ámbito de su disciplina, reflexivo, crítico, y realizar actividades de investigación que fomenten la creación y desarrollo del conocimiento.

  5. Quantitative détermination of aluminium and silicon in SiO2 and Al2O3 by X ray fluorescence

    Directory of Open Access Journals (Sweden)

    Sagrera, José Luis

    1966-09-01

    Full Text Available Not availableEn el presente trabajo, se describe la influencia de estos dos elementos entre si cuando se determinan sus contenidos en muestras binarias de Si02 y Al203. por fluorescencia de rayos X. En este mismo artículo se explica la corrección de estas influencias utilizando una fusión con tetraborato sódico, así como el procedimiento práctico para realizarla. Se detalla el procedimiento mediante fotografías tomadas en los momentos más interesantes del proceso de fusión.

  6. Manguito rotador

    OpenAIRE

    Llinás Hernández, Paulo José; Fundación Valle de Lili

    2004-01-01

    ¿Qué es el manguito rotador y cuáles son sus funciones?/ ¿Cuáles son las causas de lesiones del manguito rotador?/ ¿Cuáles son los síntomas de lesión del MR?/ ¿Cómo se realiza el diagnóstico?/ ¿Cuales son las opciones de tratamiento?/ ¿Cómo es la cirugía del MR?/ ¿Qué tan exitosa es la cirugía del MR?/Rehabilitación.

  7. Capítulo 12. Dispositivos de asistencia ventricular: una realidad en Colombia

    OpenAIRE

    Echeverría, Luis E.; Salazar, Leonardo; Torres, Ángela; Figueredo, Antonio

    2016-01-01

    Introducción: La insuficiencia cardiaca es una de las causas prevalentes de morbimortalidad en el mundo. A pesar de la mejoría en la terapia médica y los dispositivos de estimulación cardiaca, existe un porcentaje de pacientes que progresan a falla cardiaca refractaria y sus opciones se reducen a inotrópicos, trasplante cardiaco y dispositivos de asistencia ventricular. Objetivo: Presentar las alternativas actuales de asistencia ventricular disponibles para los pacientes con falla cardiaca...

  8. Thermo-mechanical treatment for improvement of superplasticity of SUS304; SUS304 no chososei kyodo kaizen no tame no kako netsu shori

    Energy Technology Data Exchange (ETDEWEB)

    Kato, M.; Torisaka, Y. [Mechanical Engineering Lab., Tokyo (Japan)

    1998-01-25

    Thermo-mechanical treatment was given to improve further the superplastic behavior of SUS 304 stainless steel. In the SUS 304, martensite phase produced by the processing induced transformation may be reversely transformed to the primary austenite phase by high-temperature heating. Crystal grain size is micronized to 1 {mu} m by combining this reverse transformation and recrystallization of the austenite phase. However, the straining rate at that time is as extremely low as 1 times 10 {sup -4}/s or lower, which is insufficient for an industrial material. Therefore, the SUS 304 processed as described above was given again a series of thermo-mechanical treatment of the similar forced cold processing and annealing to ultra-micronize the crystalline particles. Majority of the crystalline particles have come to have a grain size of several hundred nm. This test piece showed a total elongation of 400% or more at a test temperature of 973 K and a straining rate of 1.8 times 10 {sup -3}/s or lower. In addition, the straining rate sensitivity index `m` at that time was 0.45 or higher. The superplastic deformation of the SUS 304 has a high possibility of being governed by dynamic recrystallization. 4 refs., 7 figs., 1 tab.

  9. Proteja a sus seres queridos de las lesiones viales

    Centers for Disease Control (CDC) Podcasts

    2008-12-10

    Este podcast, que forma parte de la iniciativa Proteja a sus seres queridos, aborda las medidas que pueden tomar los padres de familia para ayudar a proteger a sus niños de las lesiones viales, una de las principales causas de lesiones infantiles.  Created: 12/10/2008 by National Center for Injury Prevention and Control (NCIPC).   Date Released: 4/1/2009.

  10. Antecedentes de violencia en la infancia y repercusión psicopatológica en mujeres que han vivido violencia por sus parejas. Estudio exploratorio

    OpenAIRE

    Martínez Sanz, Alicia; Mañas-Viejo, Carmen; Iniesta Martínez, Almudena

    2014-01-01

    Las situaciones traumáticas vividas en la infancia pueden tener una gran repercusión psicopatológica en la vida adulta. Otros estudios han mostrado que haber vivido abuso físico o sexual en la infancia puede estar relacionado con vivir una situación de maltrato por la pareja. El objetivo principal de esta investigación fue comprobar si vivir algún tipo de violencia en la infancia puede aumentar la sintomatología de las mujeres que han sufrido violencia por sus parejas en la vida adulta. Ademá...

  11. Energetic sustainability: Challenges and options in Mexico; Sustentabilidad energetica: Retos y opciones en Mexico

    Energy Technology Data Exchange (ETDEWEB)

    Rosas Flores, Dionicio; Sheinbaum Pardo, Claudia [Universidad Nacional Autonoma de Mexico, Mexico, D.F. (Mexico)

    2000-07-01

    In this report present a general overview of energy trends and objectives of policy for Mexico, in the context of sustainable development. The work is divided in two main parts: the first one presents trends in energy use and potential, energy sector reform, social and economics indicators and revision of efficiency and renewable energy. The second part discusses options and instruments of energy politics for the country in regard of the sustainable development. The energy is central to concerns of sustainable development, affecting economic; the local and global environment, and social problems as poverty, population, health and education. Mexico should promote political energy that permit the fulfillment the energy requirements while developing strategies that help to alleviate the social problems and productivity, based on lesser environmental impacts. [Spanish] Este reporte presenta una vision sobre las tendencias energeticas de Mexico y plantea prioridades y objetivos de politica para el pais, en el contexto de desarrollo sustentable. El trabajo muestra dos partes principales: la primera seccion presenta tendencias en el uso de energia, potenciales energeticos e indicadores economicos y sociales, ademas de una revision de eficiencias y politicas de energias renovables. La segunda parte discute opciones, instrumentos y restricciones en el contexto del desarrollo energetico sustentable en el pais. La energia es un elemento central en el desarrollo ya que esta relacionado con la economia, el ambiente local y global y aspectos sociales como pobreza, poblacion, salud y educacion. Esto obliga en Mexico a promover politicas que permitan la cobertura de los requerimientos energeticos, las cuales deben desarrollarse de manera conjunta con estrategias, para ayudar a disminuir los problemas, productivos y sociales con menores impactos ambientales.

  12. Genetic Variation of the SusC/SusD Homologs from a Polysaccharide Utilization Locus Underlies Divergent Fructan Specificities and Functional Adaptation in Bacteroides thetaiotaomicron Strains.

    Science.gov (United States)

    Joglekar, Payal; Sonnenburg, Erica D; Higginbottom, Steven K; Earle, Kristen A; Morland, Carl; Shapiro-Ward, Sarah; Bolam, David N; Sonnenburg, Justin L

    2018-01-01

    Genomic differences between gut-resident bacterial strains likely underlie significant interindividual variation in microbiome function. Traditional methods of determining community composition, such as 16S rRNA gene amplicon sequencing, fail to capture this functional diversity. Metagenomic approaches are a significant step forward in identifying strain-level sequence variants; however, given the current paucity of biochemical information, they too are limited to mainly low-resolution and incomplete functional predictions. Using genomic, biochemical, and molecular approaches, we identified differences in the fructan utilization profiles of two closely related Bacteroides thetaiotaomicron strains. B. thetaiotaomicron 8736 ( Bt-8736 ) contains a fructan polysaccharide utilization locus (PUL) with a divergent susC / susD homolog gene pair that enables it to utilize inulin, differentiating this strain from other characterized Bt strains. Transfer of the distinct pair of susC / susD genes from Bt-8736 into the noninulin using type strain B. thetaiotaomicron VPI-5482 resulted in inulin use by the recipient strain, Bt ( 8736-2 ). The presence of the divergent susC / susD gene pair alone enabled the hybrid Bt ( 8736-2 ) strain to outcompete the wild-type strain in vivo in mice fed an inulin diet. Further, we discovered that the susC / susD homolog gene pair facilitated import of inulin into the periplasm without surface predigestion by an endo-acting enzyme, possibly due to the short average chain length of inulin compared to many other polysaccharides. Our data builds upon recent reports of dietary polysaccharide utilization mechanisms found in members of the Bacteroides genus and demonstrates how the acquisition of two genes can alter the functionality and success of a strain within the gut. IMPORTANCE Dietary polysaccharides play a dominant role in shaping the composition and functionality of our gut microbiota. Dietary interventions using these m icrobiota- a

  13. Opciones no protésicas en el tratamiento de la artrosis de tobillo

    Directory of Open Access Journals (Sweden)

    DR. U. Giovanni Carcuro

    2014-09-01

    Full Text Available La artrosis de tobillo es una patología poco frecuente, tiene una incidencia nueve veces menor que la rodilla o la cadera a pesar de relación entre mayor carga y menor superficie de esta. La mayor parte son de causa secundaria, posterior a un trauma o a cambios en la biomecánica de la misma a diferencia de otras articulaciones como cadera o rodilla que su principal causa es idiopática o primaria. Causas menos frecuentes son las artropatías inflamatorias, hemocromatosis o artropatía neuropática. Es un problema creciente en la atención de salud en todo el mundo, con un 1% de prevalencia de artrosis sintomática en población adulta. El tobillo es la articulación que mayor carga recibe en cuanto a superficie se refiere, aproximadamente 500 N. La superficie articular mide 350 mm2 aproximadamente, mientras que la cadera 1100 mm2 y la rodilla 1120 mm2. Soporta hasta 5 veces el peso corporal durante la marcha. Cambios en la distribución de la carga durante la marcha podrían tener un efecto beneficioso en la lubricación y nutrición del cartílago. El cartílago articular es de 1a 1,7 mm comparado con el grosor de cartílago de la rodilla es de 1 a 6 mm. El tobillo con una gran congruencia articular presenta un cartílago más fino que es capaz de equilibrar mejor las cargas. Para el tratamiento de esta patología existen diferentes alternativas, tanto no quirúrgicas como quirúrgicas, y estas últimas se dividen en aquellas que preservan la articulación y las que no. Entre las alternativas no quirúrgicas esta la modificación de estilos de vida. Pacientes con IMC > 25 tienen un riesgo 1,5 veces mayor para el desarrollo de artrosis de pie y tobillo, siendo factor potencialmente mo-dificable, mejorando la eficacia de todas las otras opciones terapéuticas, conservadoras y quirúrgicas. Las actividades de la vida diaria que aumentan el estrés en la articulación del tobillo, así como los deportes de impacto, deben evitarse y

  14. Análisis exploratorio de la percepción en niños preescolares sobre la interacción recíproca con sus madres

    Directory of Open Access Journals (Sweden)

    Pedro Solís-Cámara R.

    2014-01-01

    Full Text Available Aunque los avances conceptuales y las evidencias empíricas con niños en edad escolar y adolescentes sugieren que las percepciones de los niños son relevantes para comprender las interacciones recíprocas padres - hijos, el estado de conocimiento es prácticamente nulo en niños preescolares. El principal objetivo de este estudio buscó explorar la percepción de niños preescolares sobre las relaciones con sus madres y analizar si los puntajes diferenciales de la percepción de los niños indican diferencias en la competencia parental, así como en otros factores que tienen relación con su crianza. Método. La muestra estuvo conformada por 50 mamás que contestaron los autorreportes y sus niños (n = 50 que contestaron una prueba pictórica de percepción de las relaciones con sus madres. Resultados. Los resultados indicaron que las percepciones de los niños sobre las interacciones adecuadas o inadecuadas fueron congruentes con los puntajes de los cuestionarios, en particular, con la competencia parental, el estrés y el bienestar subjetivo maternos y con la adaptación psicosocial, el estrés y los problemas de comportamiento de los niños, así como con el temperamento de ambos. Conclusión. Se discuten los resultados y sus implicaciones para establecer congruencia entre el avance conceptual y las evidencias empíricas sobre las interacciones recíprocas.

  15. Santa Teresa y sus cartas, historia de los sentimientos

    Directory of Open Access Journals (Sweden)

    Egido, Teófanes

    2015-12-01

    Full Text Available Historical reflection on a peculiar dimension of St. Teresa of Jesus: the expression of her feelings in her writings, particularly in her abundant letters. The article focuses on the sense of humor, the joyfulness, and the importance of laughter in St. Teresa language, and also on the feeling of endearment with her family, with her order, with fray Juan de la Cruz. Ample space is dedicated to the tenderness towards girls in her convents. St. Teresa of Jesus appears as transgressor of 16th century social behaviours.Reflexión histórica sobre una dimensión peculiar de santa Teresa de Jesús: la expresión de sus sentimientos en sus escritos, de forma más especial en sus cartas abundantes. El artículo se centra en el sentido del humor, de la alegría, en la importancia de la risa en el lenguaje de santa Teresa y en el sentimiento de ternura con su familia, con su orden, con fray Juan de la Cruz. Se dedica un espacio amplio a la ternura hacia las niñas en sus conventos. Aparece santa Teresa de Jesús como trasgresora de los comportamientos sociales del siglo XVI.

  16. El nuevo periodo de la Normalizacion Internacional Contable y sus implicaciones en Colombia

    Directory of Open Access Journals (Sweden)

    Ernesto Sierra González

    2002-06-01

    Full Text Available La preponderancia de la vertiente financiera del capital en la actual dinámica de la globalización se viene caracterizando por una profunda desregulación de los mercados de capitales con el objeto de garantizar su libre movilidad. Para conseguir que los recursos financieros circulen se requiere de información transparente y homogénea. En tal sentido, la actual discusión internacional sobre las Normas Internacionales de Contabilidad y la tendencia mundial de su incorporación, son necesarias en el contexto colombiano, a fin de discernir la conveniencia -o no- de dicha decisión, y el marco de cosas en el que, eventualmente, debería acogerse tal normativa; tales opciones son abordadas en el presente artículo.

  17. Análisis exploratorio de la percepción en niños preescolares sobre la interacción recíproca con sus madres

    OpenAIRE

    Pedro Solís-Cámara R.; Yolanda Medina Cuevas

    2014-01-01

    Aunque los avances conceptuales y las evidencias empíricas con niños en edad escolar y adolescentes sugieren que las percepciones de los niños son relevantes para comprender las interacciones recíprocas padres - hijos, el estado de conocimiento es prácticamente nulo en niños preescolares. El principal objetivo de este estudio buscó explorar la percepción de niños preescolares sobre las relaciones con sus madres y analizar si los puntajes diferenciales de la percepción de los niños indican dif...

  18. Importancia de la «voz del alumno» para descubrir sus necesidades

    Directory of Open Access Journals (Sweden)

    Elena María DÍAZ PAREJA

    2009-11-01

    Full Text Available RESUMEN: Construir una escuela inclusiva, que atienda las necesidades de todos los alumnos, se ha convertido en nuestros días en un objetivo primordial de la educación comprensiva. Muchos son los estudios que se han centrado en comprobar los resultados de este proceso de inclusión y en la figura de los alumnos con necesidades educativas especiales, considerando los elementos necesarios para conseguir su integración, su rendimiento, su adaptación social, sus interacciones con los compañeros, etc. Sin embargo, muchas veces se ha olvidado contar con la opinión de los propios «afectados»: los alumnos. Si realmente se quiere atender las necesidades de éstos, lo más lógico es recurrir a ellos para conocer cómo perciben la situación y descubrir cuáles son sus verdaderas necesidades. Este artículo presenta la visión que tiene el alumno sobre su propia realidad.ABSTRACT: Inclusive schools meeting the needs of all students are a primary goal of all general education. Much research has been done on the results of inclusión, on students with special needs, and on what is necessary for their integration, adequate performance, social adaptation, peer interaction, etc. However, their own view has often been ignored: if the aim is to meet these student's needs, their perceptions should be taken into account for a more accurate assessment of what their needs really are. This paper shows the student's view of their reality.RÉSUMÉ: Construiré une école inclusif exige qu'elle préte attention aux nécessités de tout les eleves, c'est devenu de nos jours un objectif fondamental de l'éducation. Beaucoup sont les travails qu'on centré á confirmer les résultats de ce proces et dans la figure des eleves avec nécessités éducatifs spéciaux, ayant consideré les ressources nécessaires pour obtenir leur integration, leur rendement, leur adaptation sociale, leurs interactions avec leurs compagnons... Mais quelques fois on a pas pris en compte

  19. Control y presión al comer en madres de preescolares costarricenses, y su relación con la clase social, la escolaridad, las prácticas de alimentación temprana y el índice de masa corporal de sus hijos e hijas

    Directory of Open Access Journals (Sweden)

    Alejandro Chacón-Villalobos

    2011-01-01

    Full Text Available El objetivo planteado en este trabajo fue el de caracterizar la presion y el control al comer que ejercen madres de preescolares costarricenses de clase alta y baja, evaluando relaciones con el IMC de sus hijos, el tipo de lactancia, la ablactacion, la escolaridad de la madre y su dedicacion al hogar. Para ello se solicito a 102 madres de clase alta y 121 de clase baja completar una encuesta validada (alpha de Cronbach de 0,7 basada en escalas de Likert, para cuantificar, ademas de la informacion general requerida, los niveles de control y presion. Adicionalmente, se determino el IMC segun genero de sus hijos preescolares (102 ninos de clase alta y 103 de clase baja. Para el estudio de los datos se utilizaron pruebas de t-Student y analisis de varianza, asi como correlaciones y evaluaciones de chi cuadrado. Se establecio una tendencia al sobrepeso en ambos sexos en la clase alta, la cual contrasta con las ninas pobres quienes tienden al bajo peso. Se evidencio una mayor frecuencia de trabajo fuera del hogar en la clase baja (p=0,008, siendo la introduccion de alimentos solidos mas temprana (p=0,04. La leche materna fue la opcion mas empleada en ambas clases sociales para el neonato. Ambas clases mostraron "control" y "presión" altas, especialmente entre las madres de clase social baja que trabajan fuera del hogar (p=0,0001. Ambos parametros correlacionan de manera positiva moderada (r=0,44; alpha=0,05. La correlación es mas fuerte entre la clase alta (r=0,54, sobre todo en las niñas (r=0,6.

  20. Medio ambiente, desarrollo sostenible y escalas de sustentabilidad

    Directory of Open Access Journals (Sweden)

    ÁNGEL PANIAGUA

    1998-01-01

    Full Text Available El presente artículo tiene dos partes. En la primera se analiza la complejidad y las múltiples dimensiones de concepto de sustentabilidad. La perspectiva que se adopta se fundamenta en que no existe una opinión clara y universalmente admitida sobre el concepto y, en consecuencia, una de sus principales características es su vaguedad. En la segunda parte se estudian las diferentes opciones de desarrollo rural sustentable desde una perspectiva global y se proponen diferentes escalas de sustentabilidad rural.

  1. Artrosis de muñeca, estudio y opciones de tratamiento

    Directory of Open Access Journals (Sweden)

    Dr. G. Francisco Andrade

    2014-09-01

    Full Text Available La artrosis de muñeca es una patología que se origina generalmente tras una lesión ligamentosa intraósea del carpo, debido a una no unión de fractura de escafoides o después de una fractura articular del radio. Se sabe que la artrosis no mejora ni retrocede, por lo que se debe tener el tratamiento ideal para cada paciente según sus propias necesidades, que van desde el manejo médico (cambios de actividad, inmovilización, AINES o infiltración con corticoides. Cuando falla el tratamiento médico, se pueden realizar procedimientos poco invasivos como la denervación, carpectomía proximal o una artrodesis de cuatro esquinas. En estadios avanzados, sólo se puede proponer una artroplastia o artrodesis total de la muñeca.

  2. Violencia laboral contra jornaleras agrícolas en tres comunidades del noroeste de México

    Directory of Open Access Journals (Sweden)

    Ma. del Carmen Arellano Gálvez

    2014-01-01

    Full Text Available El objetivo de este artículo es analizar las formas de violencia laboral contra mujeres jornaleras agrícolas en tres comunidades de Sinaloa, Sonora y Baja California, para lo que se utilizó una metodología cualitativa, a través de entrevistas grupales que se les hicieron a ellas. Los resultados señalan que las trabajadoras reconocen la violación a sus derechos laborales, como no contar con servicios médicos para ellas y sus hijos, ni ingresos por faltar al trabajo cuando éstos enferman y menos opciones laborales durante el embarazo. A diario viven el acoso y el hostigamiento ejercido por hombres posicionados en distintas jerarquías laborales, pero no son pasivas ante la violencia, ya que diseñan estrategias de autocuidado. Otras se organizan para brindar asesoría a mujeres sobre sus derechos laborales y las acompañan en los procesos de denuncia y búsqueda de justicia.

  3. Aplicación de Opciones Reales a la Valuación de Proyectos en Empresas Pequeñas y Medianas y su Estructura de Capital-Edición Única

    OpenAIRE

    Sara Barajas Cortés

    2006-01-01

    En este trabajo de investigación se desarrolla la valuación de un proyecto de inversión de una Pyme mexicana, dicho proyecto consiste en el diseño, comercialización e implantación de soluciones especializadas de tecnología de información en el sector de seguridad pública. Para llevar a cabo la aplicación de la metodología de opciones reales en este caso real, sirvió de guía el método del caso, ya que la mayor parte de la investigación fue de campo. El proyecto fue evaluad...

  4. Ordering at Si(111)/o-Si and Si(111)/SiO2 Interfaces

    DEFF Research Database (Denmark)

    Robinson, I. K.; Waskiewicz, W. K.; Tung, R. T.

    1986-01-01

    X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expec...... are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction....

  5. Proteja a sus seres queridos de las caídas

    Centers for Disease Control (CDC) Podcasts

    Este podcast, que forma parte de la iniciativa Proteja a sus seres queridos, aborda las medidas que pueden tomar los padres de familia para ayudar a proteger a sus niños de las caídas, una de las principales causas de lesiones infantiles.

  6. Interiores y Hannah y sus hermanas: artistas y creadores en el cine de Woody Allen

    Directory of Open Access Journals (Sweden)

    Francisco Casado Pérez

    2015-01-01

    Full Text Available Las reflexiones acerca del arte y las que tienen a los artistas que producen las obras como protagonistas son ejes fundamen- tales en la obra del cineasta neoyorquino Woody Allen. Mediante el estudio de dos de sus películas, Interiores y Hannah y sus hermanas, se analizan las diferentes actitudes de sus personajes al hacer frente a sus pulsiones creativas y cómo estas afectan a sus comportamientos en sociedad. En la primera, prácticamente todos los personajes proyectan en sus vidas sus insatisfacciones a la hora de desarrollar su arte, ya sea la escritura, la fotografía, la decoración, el cine o la interpretación. En la segunda, dos personajes, un pintor y un guionista televisivo, ofrecen más claves para dilucidar el amargo valor que da Allen a la labor artística.

  7. Altavoces y Sus Caracter?sticas.

    OpenAIRE

    Cabrera Ortiz, Juan Gabriel

    2015-01-01

    El contenido de aprendizaje aborda la definici?n de los altavoces desde el campo electroac?stico relacionando su principio de funcionamiento mec?nico el?ctrico y sus caracter?sticas mas importantes como lo son su tipo, respuesta en frecuencia, impedancia, sensibilidad y patr?n polar. Contenido realizado por el docente de la Escuela de Ciencias B?sicas Tecnolog?a e Ingenier?a Ing. Juan G. Cabrera O.

  8. Tendências curriculares nas escola de formação técnica para o SUS Curricular trends in the schools providing technical training for the SUS

    Directory of Open Access Journals (Sweden)

    Isabel Brasil Pereira

    2004-03-01

    Full Text Available Este artigo mapeia e analisa tendências curriculares das escolas de educação profissional em nível técnico para o Sistema Único de Saúde (SUS. Trata-se de, mediante resgate da literatura sobre currículo, analisar a organização, a seleção e a hierarquização de conhecimentos, fatores que estão articulados às lutas entre projetos educacionais. É significativo para o estudo o fato de que a educação profissional é chamada a responder às questões advindas do mundo do trabalho. Neste sentido, recuperam-se contradições existentes no campo educacional, como a idéia de que, por um lado, é verdade que 'a experiência ensina', consistindo em ponto significativo para a aprendizagem, mas que, por outro, é necessário fazer a crítica na fé incomensurável na experiência cotidiana como um processo que, por si só, garante a aprendizagem qualificada.This article outlines and analyses the curricular trends in the schools providing professional technical education for the Brazilian Health System's workers (Sistema Único de Saúde - SUS. With the help of a close survey of the literature on curricula, it analyses the organization, selection and hierarchical gradation of knowledge, all of which are connected with the struggle between educational projects. For the study, the fact that professional education is called to respond to the issues originating in the labour world is highly significant. In this sense, we attempted to rescue the contradictions existing in the educational field, such as, for instance, the idea that, even if it is true that "experience is the best teacher" and an important stage in the learning process, it is also important to criticize an exaggerated faith on the everyday experience and the presumption that experience can, by itself, provide qualified learning.

  9. Low temperature grain boundary diffusion of chromium in SUS316 and 316L stainless steels

    International Nuclear Information System (INIS)

    Mizouchi, Masaki; Yamazaki, Yoshihiro; Iijima, Yoshiaki; Arioka, Koji

    2004-01-01

    Grain boundary diffusivity of chromium is SUS316 and 316L stainless steels has been determined in the temperature range between 518 and 1173 K. The magnitudes of the grain boundary diffusivities in four kinds of specimens are in the order of the cold-worked SUS316, the solution-treated SUS316L, the solution-treated SUS316 and the sensitized SUS316. The grain boundary diffusivities in these specimens are remarkably higher than those of previous works. The activation energies for the former are 85-91 kJmol -1 , whereas those for the latter are 151-234 kJmol -1 . (author)

  10. Éxito o fracaso: los servicios de marketing relacional de las cadenas hoteleras. Una aproximación al caso AC

    OpenAIRE

    Hernández Mogollón, José Manuel; Folgado Fernández, José Antonio; Jiménez Caballero, José Luis (Coordinador)

    2009-01-01

    Durante muchos años atrás, la actividad del sector hotelero vivía de espaldas al conocimiento proactivo de sus clientes. En medio de crecientes opciones hoteleras donde no siempre prima la fidelidad hacia una marca, se busca por parte de las enseñas ejercer acciones muy sofisticadas de retención para influir en su decisión final de compra. El objetivo que es entablar contacto directo con el cliente para profundizar en su conocimiento y así poder facilitarle ofertas persona...

  11. LOGÍSTICA ESBELTA APLICADA AL TRANSPORTE EN EL SECTOR MINERO

    OpenAIRE

    ARANGO SERNA, MARTÍN D.; GIL GOMEZ, HERMENEGILDO; ZAPATA CORTÉS, JULIÁN A.

    2009-01-01

    Este trabajo ha sido elaborado con el objetivo de plantear la logística esbelta como una de las soluciones actuales como factor de competitividad y reducción de costos en las empresas del sector minero. Aquí se expresa la necesidad de que las redes de transporte tengan opciones de mejorar su gestión logística manejando sus recursos de manera adecuada, reduciendo costos y usando herramientas de nueva generación, de modo que mejore sustancialmente su estrategia competitiva, con el fin de lograr...

  12. Logística esbelta aplicada al transporte en el sector minero

    OpenAIRE

    ARANGO SERNA, MARTÍN D.; GIL GOMEZ, HERMENEGILDO; ZAPATA CORTÉS, JULIÁN A.

    2009-01-01

    Este trabajo  ha sido elaborado con el objetivo de plantear la logística esbelta como una de las soluciones actuales como factor de competitividad y reducción de costos en las empresas del sector minero. Aquí se expresa la necesidad de que las  redes de transporte tengan opciones de mejorar su gestión logística manejando sus recursos de manera adecuada, reduciendo costos y usando herramientas de nueva generación, de modo que mejore sustancialmente su estrategia competitiva, con el fin de logr...

  13. Liderazgo de una empresa familiar que influye en el clima laboral de los trabajadores de la empresa SEDEMI S.C.C

    OpenAIRE

    Rodríguez Valenzuela, Darwin Fausto

    2015-01-01

    El presente trabajo detalla el estudio del liderazgo y su influencia en el clima organizacional de los trabajadores de la empresa familiar Sedemi S.C.C., con la fin de proponer opciones de mejora, que coadyuven al directorio de la empresa, para fomentar un ambiente laboral agradable y motivador para sus empleados, y de esta manera incrementar su desempeño laboral. La investigación se realizó en la empresa SEDEMI S.C.C. La población objetivo está conformada por los empleados administrativos y ...

  14. Experiencia con la dieta cetogénica como tratamiento en la epilepsia refractaria

    OpenAIRE

    Ramírez Camacho, Alia; Meavilla, Silvia; Catalán, Natalia; Gutiérrez, Alejandra; Campistol Plana, Jaume

    2011-01-01

    Introducción: La epilepsia es una enfermedad neurológica que se controla con fármacos antiepilépticos en la mayoría de casos. Sin embargo, aproximadamente un 25% de epilepsias son refractarias al tratamiento farmacológico. La dieta cetogénica es una de las opciones terapéuticas para este tipo de epilepsia. A pesar del aumento en los últimos años de la popularidad de ésta como tratamiento anticonvulsivo, no se ha establecido un consenso internacional para sus indicaciones y manejo. Objetivo: E...

  15. Condiciones alimentarias de los mayas macehuales de Quintana Roo

    Directory of Open Access Journals (Sweden)

    Virginia Ivonne Sánchez Vázquez

    2011-07-01

    Full Text Available Las políticas alimentarias ofrecen una visión oficial sobre las condiciones de la alimentación en México, y específicamente en el México rural indígena, pero a partir de un estudio de caso con los grupos mayas macehuales de Quintana Roo, se muestra el contexto de confrontación donde las comunidades despliegan sus pautas de reproducción social, ciertamente en desventaja estructural, pero no de manera pasiva, sino creando y recreando opciones bajo su marco cultural situado.

  16. El grafeno y sus propiedades especiales

    OpenAIRE

    F. Guinea

    2011-01-01

    El grafeno, formado por una capa de átomos de carbono, es un nuevo material con interesantes propiedades, desde un punto de vista fundamental, y también por sus posibles aplicaciones. Se describen algunas de estas propiedades, y se discuten algunos avances recientes en la investigación en este material.

  17. Study of Si/Si, Si/SiO2, and metal-oxide-semiconductor (MOS) using positrons

    International Nuclear Information System (INIS)

    Leung, To Chi.

    1991-01-01

    A variable-energy positron beam is used to study Si/Si, Si/SiO 2 , and metal-oxide-semiconductor (MOS) structures. The capability of depth resolution and the remarkable sensitivity to defects have made the positron annihilation technique a unique tool in detecting open-volume defects in the newly innovated low temperature (300C) molecular-beam-epitaxy (MBE) Si/Si. These two features of the positron beam have further shown its potential role in the study of the Si/SiO 2 . Distinct annihilation characteristics has been observed at the interface and has been studied as a function of the sample growth conditions, annealing (in vacuum), and hydrogen exposure. The MOS structure provides an effective way to study the electrical properties of the Si/SiO 2 interface as a function of applied bias voltage. The annihilation characteristics show a large change as the device condition is changed from accumulation to inversion. The effect of forming gas (FG) anneal is studied using positron annihilation and the result is compared with capacitance-voltage (C-V) measurements. The reduction in the number of interface states is found correlated with the changes in the positron spectra. The present study shows the importance of the positron annihilation technique as a non-contact, non-destructive, and depth-sensitive characterization tool to study the Si-related systems, in particular, the Si/SiO 2 interface which is of crucial importance in semiconductor technology, and fundamental understanding of the defects responsible for degradation of the electrical properties

  18. Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films

    International Nuclear Information System (INIS)

    Rozo, C.; Fonseca, L.F.; Jaque, D.; Sole, J.Garcia

    2008-01-01

    Er-doped Si-SiO 2 and Al-Si-SiO 2 films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er 3+ : 4 I 13/2 → 4 I 15/2 emission of Er-doped Si-SiO 2 yields a maximum intensity for annealing at 700-800 deg. C. 4 I 13/2 → 4 I 15/2 peak emission for Er-doped Al-Si-SiO 2 at 1525 nm is shifted from that for Er-doped Si-SiO 2 at 1530 nm and the bandwidth increases from 29 to 42 nm. 4 I 13/2 → 4 I 15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the 4 I 13/2 → 4 I 15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the 4 I 11/2 level in Er-doped Si-SiO 2 involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions

  19. La Gran Guerra y sus impactos locales. Rosario, Argentina 1914-1920

    Directory of Open Access Journals (Sweden)

    Cecilia M. Pascual

    2015-07-01

    Full Text Available Este artículo aborda el impacto de la Gran Guerra en la ciudad de Rosario, Argentina. Releva sus impactos económicos y los significados que se les asignaron. Analiza las formas en que los actores sociales intentaron hacer frente a los efectos críticos del conflicto mundial: encarecimiento de los productos primarios, desabastecimiento y desocupación. En este campo resultan importantes la producción de ferias francas, la construcción de mercados municipales y el abasto directo de productos primarios por parte del municipio. Ante la dimensión y duración del paro, las autoridades comenzaron a tejer nuevas estrategias para intervenir sobre este fenómeno. Se observa una transición de unas estrategias gubernamentales basadas en la represión y la segregación a otras emparentadas con la asistencia y la ayuda social. Si bien estas nuevas herramientas de intervención no tendieron a perdurar y manifestaron su carácter coyuntural y paliativo, una vez superada la crisis, hacia mediados de los años 1920, organizaron el debate sobre la producción de nuevas políticas municipales y del reformismo local.

  20. Tratamiento contable de las stock options según la normativa contable internacional

    Directory of Open Access Journals (Sweden)

    Elena Merino Madrid

    2010-01-01

    Full Text Available La retribución que hacen las empresas a sus directivos y empleados mediante la entrega de opciones sobre acciones (stock options se ha convertido en una práctica habitual en muchos países del mundo. Hasta fechas recientes no existía un consenso sobre el tratamiento contable que se debía dar a este tipo de transacciones; sin embargo, en la actualidad parece que tal consenso se ha alcanzado al exigir tanto el International Accounting Standards Board (iasb como el Financial Accounting Standards Board (fasb, en la International Financial Reporting Standard, ifrs 2 (niif 2, Norma Internacional de Información Financiera y Statement of Financial Accounting Standards (sfas 123 (R respectivamente, que se reconozca la remuneración basada en la entrega de opciones sobre acciones como un gasto en los estados financieros. El objetivo de este trabajo es analizar el tratamiento contable aplicable de acuerdo con la normativa contable internacional o de información financiera (nic/niif.

  1. A veces también llueve para arriba: de travestis, sus amores y desamores

    Directory of Open Access Journals (Sweden)

    Luz Mary López Murcia

    2010-10-01

    estas, por un lado, se ubican en un orden heteronormativo del género y, por otro, legitiman y problematizan esta normatividad en sus modos de relacionarse consigo mismas y con los otros. En este texto se exponen algunos de los elementos que atraviesan la realidad de los travestis que ejercen la prostitución, a saber: la manera de construir sus identidades de género, sus nociones de la feminidad y la masculinidad, su cuerpo, sus concepciones sobre el amor y los roles que asumen y vivencian en las relaciones erótico-afectivas

  2. Asimetría y curtosis en el modelo binomial para valorar opciones reales: caso de aplicación para empresas de base tecnológica

    Directory of Open Access Journals (Sweden)

    Gastón Silverio Milanesi

    2013-01-01

    Full Text Available El trabajo propone un modelo de valoración de opciones reales con base en el modelo binomial utilizando la transformación de Edgeworth (Rubinstein, 1998 para incorporar momentos estocásticos de orden superior, especialmente para ciertos tipos de organizaciones, como empresas de base tecnológica, donde no se dispone de cartera de activos financieros gemelos, comparables de mercado y procesos estocásticos no gaussianos. Primero, se presenta el desarrollo formal del modelo, luego su aplicación sobre la valuación de spin-off tecnológico universitario, sensibilizando asimetría-curtosis y exponiendo el impacto en el valor del proyecto. Finalmente, se concluye sobre limitaciones y ventajas de la propuesta de valoración que resume la simplicidad del modelo binomial e incorporando momentos de orden superior en subyacentes con procesos no normales.

  3. Asimetría y curtosis en el modelo binomial para valorar opciones reales: caso de aplicación para empresas de base tecnológica

    Directory of Open Access Journals (Sweden)

    Gastón Silverio Milanesi

    2013-07-01

    Full Text Available El trabajo propone un modelo de valoración de opciones reales con base en el modelo binomial utilizando la transformación de Edgeworth (Rubinstein, 1998 para incorporar momentos estocásticos de orden supe- rior, especialmente para ciertos tipos de organizaciones, como empresas de base tecnológica, donde no se dispone de cartera de activos financieros gemelos, comparables de mercado y procesos estocásticos no gaussianos. Primero, se presenta el desarrollo formal del modelo, luego su aplicación sobre la valuación de spin-off tecnológico universitario, sensibilizando asimetría-curtosis y exponiendo el impacto en el valor del proyecto. Finalmente, se concluye sobre limitaciones y ventajas de la propuesta de valoración que resume la simplicidad del modelo binomial e incorporando momentos de orden superior en subyacentes con pro- cesos no normales.

  4. An evaluation of designed Start-up System (SUS) for once-through steam generators

    International Nuclear Information System (INIS)

    Yu, Dali; Peng, Minjun; Xia, Genglei; Mao, Wanchao; Yang, Yang

    2014-01-01

    Highlights: • Four SUS solutions are established to help reactors complete the start-up process. • Solutions C and D lead to superior behaved than Solutions A and B. • Solution C is fit for propulsion reactors and Solution D for nuclear power reactors. - Abstract: In this paper, we report on research that has been carried out both on the comparison and evaluation of four designed Start-up Systems (SUSs), which are proposed to improve reliability and economy during the reactor start-up process. Firstly, four SUS solutions are established to satisfy demands and detailed descriptions are introduced. Then, four reactor systems, which include SUS, are modeled by the estimate code JTopmeret. Furthermore besides, the JTopmeret code is validated for the once-through steam generators (OTSG). Finally, the behaviors of SUS and the steady and transient performance of OTSG are investigated. The results show that the designed SUS can successfully improve the economy and the OTSG operational safety. Suggestion is made in this paper to apply Solution C in propulsion-purposed reactors, and Solution D in nuclear power reactors

  5. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

    International Nuclear Information System (INIS)

    Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-01-01

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN x /SiN y multilayers with high on/off ratio of 10 9 . High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  6. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

    Science.gov (United States)

    Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-09-01

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  7. Electronic states at Si-SiO2 interface introduced by implantation of Si in thermal SiO2

    International Nuclear Information System (INIS)

    Kalnitsky, A.; Poindexter, E.H.; Caplan, P.J.

    1990-01-01

    Interface traps due to excess Si introduced into the Si-SiO 2 system by ion implantation are investigated. Implanted oxides are shown to have interface traps at or slightly above the Si conduction band edge with densities proportional to the density of off-stoichiometric Si at the Si-SiO 2 interface. Diluted oxygen annealing is shown to result in physical separation of interface traps and equilibrium substrate electrons, demonstrating that ''interface'' states are located within a 0.5 nm thick layer of SiO 2 . Possible charge trapping mechanisms are discussed and the effect of these traps on MOS transistor characteristics is described using a sheet charge model. (author)

  8. Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

    1997-01-01

    Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

  9. LAS MUJERES EN LA HISTORIA DE COLOMBIA, SUS DERECHOS, SUS DEBERES

    Directory of Open Access Journals (Sweden)

    Jacqueline Blanco Blanco

    2009-01-01

    Full Text Available La igualdad de géneros ha estado sujeta a un largo proceso religioso, político, económico y social, en razón a los intereses que mueven a la sociedad masculina frente a la femenina. Lasmujeres, al principio de su historia, permanecieron sujetas a un código moral que no reconocía más que un incontable número de deberes, sin embargo, movida por sus razones de madre y esposa, principalmente, logró involucrarse en la toma de decisiones familiares, de donde pudo proyectarse hacia la participación y construcción de su núcleo familiar, de ahí contribuyó a labrar un camino en lo político y laboral que no le pudo ser indiferente por mucho tiempo.

  10. Proteja a sus seres queridos de las caídas

    Centers for Disease Control (CDC) Podcasts

    2008-12-10

    Este podcast, que forma parte de la iniciativa Proteja a sus seres queridos, aborda las medidas que pueden tomar los padres de familia para ayudar a proteger a sus niños de las caídas, una de las principales causas de lesiones infantiles.  Created: 12/10/2008 by National Center for Injury Prevention and Control (NCIPC).   Date Released: 4/1/2009.

  11. Morte neonatal precoce segundo complexidade hospitalar e rede SUS e não-SUS na Região Metropolitana de São Paulo, Brasil Early neonatal mortality according to level of hospital complexity in Greater Metropolitan São Paulo, Brazil

    Directory of Open Access Journals (Sweden)

    Zilda Pereira da Silva

    2010-01-01

    Full Text Available O objetivo foi analisar o perfil dos recém-nascidos, mães e mortalidade neonatal precoce, segundo complexidade do hospital e vínculo com o Sistema Único de Saúde (SUS, na Região Metropolitana de São Paulo, Brasil. Estudo baseado em dados de nascidos vivos, óbitos e cadastro de hospitais. Para obter a tipologia de complexidade e o perfil da clientela, empregaram-se análise fatorial e de clusters. O SUS atende mais recém-nascidos de risco e mães com baixa escolaridade, pré-natal insuficiente e adolescentes. A probabilidade de morte neonatal precoce foi 5,6‰ nascidos vivos (65% maior no SUS, sem diferenças por nível de complexidade do hospital, exceto nos de altíssima (SUS e média (não-SUS complexidade. O diferencial de mortalidade neonatal precoce entre as duas redes é menor no grupo de recém-nascidos 2.500g. Há uma concentração de nascimentos de alto risco na rede SUS, contudo a diferença de mortalidade neonatal precoce entre a rede SUS e não-SUS é menor nesse grupo de recém-nascidos. Novos estudos são necessários para compreender melhor a elevada mortalidade de recém-nascidos > 2.500g no SUS.The aim of this study was to analyze the profile of newborns, mothers, and early neonatal mortality according to the hospital's complexity and affiliation (or lack thereof with the Unified National Health System (SUS in Greater Metropolitan São Paulo, Brazil. The study was based on data for live births, deaths, and hospital registries. Factor and cluster analysis were used to obtain the typology of hospital complexity and user profile. The SUS treats more high-risk newborns and mothers with low schooling, insufficient prenatal care, and teenage mothers. The probability of early neonatal death was 5.6‰ live births (65% higher in the SUS, with no significant differences by level of hospital complexity, except those with extremely high (SUS and medium (non-SUS complexity. The difference in early neonatal mortality between the

  12. Reiterables y prescindibles en: Efecto Invernadero/Y si la belleza corrompe la muerte de Mario Bellatin : Instancias de un abordaje crítico-genético

    OpenAIRE

    Torres Reca, Guillermina

    2012-01-01

    Este trabajo aborda dos textos de Mario Bellatin, Efecto Invernadero y su pre-texto Y si la belleza corrompe la muerte, a partir de dos declaraciones del autor, referidas al proceso creativo y de producción. El autor habla de su propia obra y su palabra no se esfuma, trabaja sobre sus textos todo el tiempo. De este modo, la propuesta es hacer funcionar sus declaraciones en conjunto; porque sirven, porque fueron dichas y están ahí y, al mismo tiempo, complejizar por qué, en qué medida y cómo s...

  13. Sub-barrier fusion of Si+Si systems

    Science.gov (United States)

    Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Bourgin, D.; Čolović, P.; Corradi, L.; Courtin, S.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Urbani, M.; Szilner, S.; Zhang, G. L.

    2017-11-01

    The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC) calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3- excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  14. Sub-barrier fusion of Si+Si systems

    Directory of Open Access Journals (Sweden)

    Colucci G.

    2017-01-01

    Full Text Available The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3− excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  15. Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO{sub 2}/Si and SiO{sub 2}/SiC structures

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, H., E-mail: koba771@ybb.ne.jp [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Imamura, K.; Kim, W.-B.; Im, S.-S.; Asuha [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

    2010-07-15

    We have developed low temperature formation methods of SiO{sub 2}/Si and SiO{sub 2}/SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO{sub 3} aqueous solutions at 120 deg. C), an ultrathin (i.e., 1.3-1.4 nm) SiO{sub 2} layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 deg. C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 deg. C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO{sub 2} gap-state density, and (iii) high band discontinuity energy at the SiO{sub 2}/Si interface arising from the high atomic density of the NAOS SiO{sub 2} layer. For the formation of a relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in {approx}40 wt% HNO{sub 3} and azeotropic HNO{sub 3} aqueous solutions, respectively. In this case, the SiO{sub 2} formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO{sub 2} layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO{sub 2} layer is slightly higher than that for thermal oxide. When PMA at 250 deg. C in hydrogen is performed on the two-step NAOS SiO{sub 2} layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 deg. C. A relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer can also be formed on SiC at 120 deg. C by use of the two-step NAOS method. With no treatment before the NAOS method

  16. Virulencia de cepas de Listeria monocytogenes procedentes de cabras y sus derivados

    Directory of Open Access Journals (Sweden)

    Guicela Ramírez Bernal

    2014-01-01

    Full Text Available Se evaluó la virulencia de cepas de Listeria monocytogenes todas de serotipo 4b procedentes de cabras y sus derivados. Se observaron niveles de virulencia variables cuando se comparó la virulencia relativa (porcentaje de letalidad en ratones BALB/c inoculados vía intravenosa o intragástrica y su capacidad para infectar macrófagos J774A.1, y células epiteliales Caco-2. Dos cepas obtenidas de alimento de cabras produjeron 100 % de letalidad por ambas vías de inoculación y no mostraron diferencia significativa con la cepa testigo (P>0.05 respecto al porcentaje de invasión y a los parámetros de la cinética de crecimiento cuadrática observada en ambas líneas celulares. Si bien todas las cepas lograron invadir las células Caco-2, solamente algunas consiguieron invadir el bazo después de la inoculación por vía intragástrica. Las dos cepas provenientes de alimento de cabras fueron las más virulentas, representando un riesgo para la salud humana y animal, ya que pueden ser diseminadas en el hato y de este a otras explotaciones o a las instalaciones donde se elaboran alimentos.

  17. Joining of SiC ceramics and SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

    1996-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method will permit the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent emphasis has been given to technology transfer activities, and several collaborative research efforts are in progress. Investigations are focusing on applying the joining method to sintered {alpha}-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  18. REFORMAS COMERCIALES (APERTURA EN AMERICA LATINA: REVISANDO SUS IMPACTOS EN EL CRECIMIENTO Y EL DESARROLLO

    Directory of Open Access Journals (Sweden)

    RICARDO E. BUITRAGO R.

    2009-01-01

    Full Text Available Los programas de la liberalización económica tienen muchas características comunes en todo el mundo, pero no tienen necesariamente las mismas consecuencias. Las diferencias en sus efectos reflejan las diferencias en los países mismos junto con factores accidentales de sincronización y otros acontecimientos externos. La liberalización comercial y la apertura al comercio se ven generalmente como elementos claves para unas exitosas estrategias de crecimiento y desarrollo, sin embargo, la política comercial puede inducir fuerzas antagónicas en la distribución de ingresos y el alivio de la pobreza. Este parece ser el caso de Latinoamérica, el uso de la palabra apertura encubre un deseo, si no una obligación bajo el Consenso de Washington, de los países para seguir una política de libre comercio y debido a las diferencias mencionadas anteriormente los impactos en el desarrollo y el alivio de la pobreza son fundamentalmente diferentes.

  19. Percepción de los jugadores de fútbol, de distinto nivel, sobre sus entrenadores

    Directory of Open Access Journals (Sweden)

    Antonio Rosado

    2007-01-01

    Full Text Available El conocimiento de la percepción que los deportistas tienen de su entrenador, y de los rasgos valorados por los mismos, supone un paso importante para la optimización de la relación entrenador-jugador. El objetivo de la presente investigación es caracterizar la percepción que los jugadores de fútbol senior de distinto nivel (amateurs y Liga Portuguesa de fútbol poseen de sus entrenadores. La versión portuguesa del Player Coach Interaction Inventory, de Medford (Medford y Thorpe, 1986 fue aplicada a un total de 195 futbolistas. Los resultados muestran una imagen positiva de los entrenadores, no existiendo diferencias significativas entre los grupos en función del nivel de práctica, excepto en la característica "con capacidad constante". Las características más valoradas son las asociadas al factor cualidades personales (sincero, seguro de si, honesto, inteligente y motivador, y las menos valoradas las asociadas al factor liderazgo (experto, dinámico, experimentado, ejemplar y con capacidades variadas.

  20. Internal Stress Distribution Measurement of TIG Welded SUS304 Samples Using Neutron Diffraction Technique

    Science.gov (United States)

    Muslih, M. Refai; Sumirat, I.; Sairun; Purwanta

    2008-03-01

    The distribution of residual stress of SUS304 samples that were undergone TIG welding process with four different electric currents has been measured. The welding has been done in the middle part of the samples that was previously grooved by milling machine. Before they were welded the samples were annealed at 650 degree Celsius for one hour. The annealing process was done to eliminate residual stress generated by grooving process so that the residual stress within the samples was merely produced from welding process. The calculation of distribution of residual stress was carried out by measuring the strains within crystal planes of Fe(220) SUS304. Strain, Young modulus, and Poisson ratio of Fe(220) SUS304 were measured using DN1-M neutron diffractometer. Young modulus and Poisson ratio of Fe(220) SUS304 sample were measured in-situ. The result of calculations showed that distribution of residual stress of SUS304 in the vicinity of welded area is influenced both by treatments given at the samples-making process and by the electric current used during welding process.

  1. Characteristics of SUS-MI cables and it's application to wiring in nuclear power facilities

    International Nuclear Information System (INIS)

    Okuno, Michio; Sato, Toshio; Handa, Katsue; Ohya, Shingo; Ioroi, Masaya

    1984-01-01

    SUS-MI cables are the inorganic insulation cables using austenitic stainless steel SUS 321 as the sheath, oxygen-free copper as the conductor and high purity magnesium oxide as the insulatingmaterial. Because of the excellent characteristics of the composing materials, the properties withstanding radiation, fire and heat, and sodium of the cables are superior. In the nuclear power facilities being developed such as fast breeder reactors and nuclear fusion reactors, there is the environment the cables with organic materials as the components cannot meet. As the cables to be applied to such places, the SUS-MI cables are most suitable. In this report, the electric properties and the mechanical strength of the cables and the examples of practical use are described. The highest temperature of using the SUS-MI cables is 800 deg C. The form and the composing materials of the SUS-MI cables, the characteristics and the cable laying are reported. Ceramic connectors and heat-resistant wall penetration parts were developed. The characteristics of the cables for the preheaters of fast breeder reactors are compared. (Kako, I.)

  2. Les fictions du féminin dans l’œuvre de María Rosa de Gálvez (1768-1806)

    OpenAIRE

    Flepp, Catherine

    2017-01-01

    Estudio que procura definir las constantes de lo femenino en el teatro de María Rosa de Gálvez. Casi siempre víctimas, son las mujeres las que encarnan el modelo que seguir y ponen en tela de juicio el poder masculino. Se han destacado las estrategias discursivas y las opciones vitales –entre las cuales prevalece el sacrificio femenino que hacen posible tal denuncia, así como sus límites. Parece fundamental la cuestión del saber y del poder femenino, así como el sitio otorgado al amor y al ma...

  3. Microstructure and Mechanical Property of SiCf/SiC and Cf/SiC Composites

    International Nuclear Information System (INIS)

    Lee, S P; Cho, K S; Lee, H U; Lee, J K; Bae, D S; Byun, J H

    2011-01-01

    The mechanical properties of SiC based composites reinforced with different types of fabrics have been investigated, in conjunction with the detailed analyses of their microstructures. The thermal shock properties of SiC f /SiC composites were also examined. All composites showed a dense morphology in the matrix region. Carbon coated PW-SiC f /SiC composites had a good fracture energy, even if their strength was lower than that of PW-C f /SiC composites. SiC f /SiC composites represented a great reduction of flexural strength at the thermal shock temperature difference of 300 deg. C.

  4. Magnetron-sputter epitaxy of β-FeSi2(220)/Si(111) and β-FeSi2(431)/Si(001) thin films at elevated temperatures

    International Nuclear Information System (INIS)

    Liu Hongfei; Tan Chengcheh; Chi Dongzhi

    2012-01-01

    β-FeSi 2 thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 °C. On Si(111), the growth is consistent with the commonly observed orientation of [001]β-FeSi 2 (220)//[1-10]Si(111) having three variants, in-plane rotated 120° with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]β-FeSi 2 (431)//[110]Si(001) with four variants, which is hitherto unknown for growing β-FeSi 2 . Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between β-FeSi 2 grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of β-FeSi 2 /Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of β-FeSi 2 (431)/Si(001) is larger than that on the surface of β-FeSi 2 (220)/Si(111).

  5. SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

    Science.gov (United States)

    Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

    2017-05-01

    A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

  6. Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

    1994-01-01

    High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

  7. La industria francesa del cemento su evolución, sus tendencias

    Directory of Open Access Journals (Sweden)

    Coiffu, Pierre

    1961-06-01

    Full Text Available Not availableSeñores: Habiéndome pedido mi querido amigo don Julián Rezola les expusiera a ustedes la evolución de la industria del cemento en la Franela Metropolitana, desde unos años acá, así como sus tendencias actuales, voy a tratar de corresponder de la mejor manera a esta invitación, que tanto me satisface como me honra. Empezaré por situar la industria francesa del cemento, indicando sus características principales, así como los factores que han influido en su evolución, para luego explicarles la manera de cómo los fabricantes han ido resolviendo los problemas que se les han presentado, y examinar sucesivamente la evolución de las diferentes secciones y servicios de una fábrica de cemento. Finalmente, voy a precisarles los resultados de conjunto obtenidos por nuestra industria, y trataré de darles algunas indicaciones sobre sus previsiones futuras.

  8. Fabrication and Mechanical Properties of SiCw(p/SiC-Si Composites by Liquid Si Infiltration using Pyrolysed Rice Husks and SiC Powders as Precursors

    Directory of Open Access Journals (Sweden)

    Dan Zhu

    2014-03-01

    Full Text Available Dense silicon carbide (SiC matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w, and then decreased to 17.3 GPa with the increase of SiC added in the preforms up to 80% (w/w. The values of flexural strength of the composites initially decreased when 20% (w/w SiC was added in the preform and then increased to 587 MPa when the SiC concentration reached 80% (w/w. The refinement of SiC particle sizes and the improvement of the microstructure in particle distribution of the composites due to the addition of external SiC played an effective role in improving the mechanical properties of the composites.

  9. Maltrato infantil y sus consecuencias a largo plazo

    Directory of Open Access Journals (Sweden)

    Laura Carolina Alarcón Forero

    2010-01-01

    Full Text Available La violencia intrafamiliar constituye una de las formas más frecuentes de violencia encontradas tanto a nivel nacional como internacional y dentro de estas el maltrato infantil presenta cifras alarmantes, y es el objeto de nuestra revisión. Los efectos de este problema repercuten notablemente en aquellos que sobreviven, ya que las consecuencias a largo plazo del maltrato infantil son más perjudiciales para lasvíctimas y sus familias, y más costoso para la sociedad, que las lesiones agudas inmediatas que puedan producir. Las consecuencias a largo plazo para estos niños varían desde efectos nocivos en su desarrollo hasta trastornos psicológicos, psiquiátricos y orgánicos. Es importante resaltar que aún con muy buenas intervenciones no todas tienen el éxito esperado si no se hacen de manera correcta. Esindispensable contar con estrategias de prevención que incluyan personal bien entrenado, una supervisión adecuada, los recursos necesarios, y un tiempo mínimo óptimo para enfrentar el problema y obtener los mejores resultados. ______________________________________________________________________Domestic violence is one of the most common forms of violence found both domestically and internationally. Within these, child abuse has alarming figures. This is the subject of this review. The effects of this problem significantly impact on those who survive; their long-term consequences are most severe and expensive for victimized child and his/her family than associated primary physical injuries. Thelong-term consequences for these children range from adverse effects on its psycholigical development to psychological, psychiatric organic disoders. It is important to note that good speeches are not enough to achieve success if any intervention are not done correctly. All prevention strategies include well-trained staff, appropriate supervision, resources, and a optimal time for addressing this problem to get the best results.

  10. Oscillations in the fusion of the Si + Si systems; Oscilaciones en la fusion de sistemas de Si + Si

    Energy Technology Data Exchange (ETDEWEB)

    Aguilera R, E F; Kolata, J J; DeYoung, P A; Vega, J J [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico)

    1986-02-15

    Excitation functions for the yields of all the residual nuclei from the {sup 28} Si + {sup 28,30} and {sup 30} Si + {sup 30} Si reactions have been measured via the {gamma}-ray technique for center of mass energies in the region within one and two times the Coulomb barrier.Thirteen elements were identified for the first reaction and ten for the other two. While no structure is shown by the data for the {sup 28} + {sup 28} Si reaction, we have found evidence for intermediate width structure in the 2{alpha} and the {alpha}pn channels in {sup 28} Si + {sup 30} Si and for broad structure in the total fusion cross sections for {sup 30} Si + {sup 30} Si. Calculations using a barrier penetration model with one free parameter reproduce the experimental results quite well. Evaporation model calculations indicate that the individual structure of the nuclei involved in the respective decay chains might have an important influence upon the deexcitation process at the energies relevant to our experiments. (Author)

  11. Censo estadounidense 2010: cifras e implicaciones de la mayor presencia de Centroamericanos en Estados Unidos

    Directory of Open Access Journals (Sweden)

    José Luis Rocha

    2011-12-01

    Full Text Available Con el tic-tac del reloj del censo estadounidense, este texto da cuenta de las cifras de migrantes centroamericanos en Estados Unidos: cuántos son, a qué ritmo crecen, dónde se ubican. Posteriormente, con base en el procesamiento de las estadísticas del Census Bureau 2010, muestra algunas características de los centroamericanos: son los más rezagados -en educación, arraigo, ingresos, obtención de ciudadanía, y de empleos estables y bien remunerados- entre los inmigrantes latinos. Sus patrones de asentamiento pueden repercutir negativamente sobre su futuro porque sus opciones geográficas son un voto político de los sin voto: contribuyen al crecimiento demográfico y de sillas en el congreso de los estados sureños, proverbial plaza de republicanos que han promovido leyes y operativos anti-inmigrantes.

  12. Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ruffino, Francesco; Miritello, Maria [CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Tomasello, Mario Vincenzo [Scuola Superiore di Catania, via San Nullo 5/i, 95123 Catania (Italy); De Bastiani, Riccardo; Grimaldi, Maria Grazia [Dipartimento di Fisica ed Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy); CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Nicotra, Giuseppe; Spinella, Corrado [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, 95121 Catania (Italy)

    2011-03-15

    We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO{sub 2}(70nm)/Si(30nm)/SiO{sub 2}(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO{sub 2} interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO{sub 2}/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO{sub 2} interfaces was estimated in 10{sup 14} traps/cm{sup 2}. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xiaofan; Ma, Zhongyuan, E-mail: zyma@nju.edu.cn; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan [National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory of Photonic Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2014-09-28

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  14. Daniel Solano: "Me matan si no trabajo, y si trabajo me matan"

    Directory of Open Access Journals (Sweden)

    Jessica Visotsky

    2015-01-01

    Full Text Available Existe una creencia en el noroeste argentino que es la Leyenda del Familiar, esta leyenda que al parecer surgiría ligada al desarrollo industrial, nace y se desarrolla ligada a la instalación de los ingenios azucareros a fines del siglo XIX y principios del XX. En los mismos se llevó a cabo la explotación de miles y miles de trabajadores bajo condiciones inhumanas de trabajo y salarios miserables. El familiar era el perro del diablo o el diablo mismo, podía también adoptar formas de viborón, toro, burro, por lo general era un perro, negro, desprendía llamaradas de fuego por los ojos, tenía una fuerza descomunal en sus garras, con quién el patrón del ingenio o capataz había hecho un pacto: que saciaría su hambre con la entrega de un obrero por año, y éste le aseguraría prosperidad. En distintas situaciones un obrero podía encontrar la muerte, sea por accidentes, sea cayendo a una caldera, atrapado en una cinta trituradora de la caña, o si un trabajador desaparecía se decía que era obra “del familiar”.

  15. Age-hardening susceptibility of high-Cr ODS ferritic steels and SUS430 ferritic steel

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Dongsheng, E-mail: chen.dongsheng85@gmail.com [Graduate School of Energy Science, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); Kimura, Akihiko; Han, Wentuo; Je, Hwanil [Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)

    2015-10-15

    Highlights: • The role of oxide particles in α/α′ phase decomposition behavior; microstructure of phase decomposition observed by TEM. • The characteristics of ductility loss caused by age-hardening. • Correlation of phase decomposition and age-hardening explained by dispersion strengthened models. • Age-hardening susceptibility of ODS steels and SUS430 steel. - Abstract: The effect of aging on high-Cr ferritic steels was investigated with focusing on the role of oxide particles in α/α′ phase decomposition behavior. 12Cr-oxide dispersion strengthened (ODS) steel, 15Cr-ODS steel and commercial SUS430 steel were isothermally aged at 475 °C for up to 10,000 h. Thermal aging caused a larger hardening in SUS430 than 15Cr-ODS, while 12Cr-ODS showed almost no hardening. A characteristic of the ODS steels is that the hardening was not accompanied by the significant loss of ductility that was observed in SUS430 steel. After aging for 2000 h, SUS430 steel shows a larger ductile–brittle transition temperature (DBTT) shift than 15Cr-ODS steel, which suggests that the age-hardening susceptibility is lower in 15Cr-ODS steel than in conventional SUS430 steel. Thermal aging leaded to a large number of Cr-rich α′ precipitates, which were confirmed by transmission electron microscopy (TEM). Correlation of age-hardening and phase decomposition was interpreted by Orowan type strengthening model. Results indicate that oxide particles cannot only suppress ductility loss, but also may influence α/α′ phase decomposition kinetics.

  16. El perfil del consumidor de hostel en Brasil y sus motivaciones

    OpenAIRE

    Mané, Alexandra; Ferreira, Lissa

    2017-01-01

    El creciente número de hostels en Brasil ha atraído cada vez más brasileños que buscan este tipo de establecimiento para hospedarse. No obstante, vale destacar que deben realizarse más estudios que aborden la importancia de los hostels y sus consumidores en el mercado de turismo. Podrán contribuir al conocimiento teórico y práctico posibilitando un mejor entendimiento sobre este segmento. El objetivo de este artículo es identificar y describir el perfil del consumidor de hostel, sus motivacio...

  17. NETWORKS OF HEALTH CARE: A CHALLENGE TO SUS MANAGEMENT

    Directory of Open Access Journals (Sweden)

    Camila Dubow

    2013-09-01

    Full Text Available The article proposes a critical reflection, based on national law, scholarly, scientific, on the current development of Networks of Health Care, as a strategy for strengthening the Single Health System (SUS. Are weighted inefficiency of traditional ways of organizing care and management, the challenge of Network Health Care for comprehensive care and management mechanisms used in this process. The work provides subsidies for the care practices and health management are reflected, pointing strategies that result in disruptions of paradigms through a refocusing of attention in existing models. For networks of health care can be consolidated, is fundamental to political sensitivity of health managers with a commitment to build a new model of care, through the struggle to consolidate the SUS and the realization of the principles of universality, comprehensiveness and equity.

  18. Strained Si/SiGe MOS transistor model

    Directory of Open Access Journals (Sweden)

    Tatjana Pešić-Brđanin

    2009-06-01

    Full Text Available In this paper we describe a new model of surfacechannel strained-Si/SiGe MOSFET based on the extension of non-quasi-static (NQS circuit model previously derived for bulk-Si devices. Basic equations of the NQS model have been modified to account for the new physical parameters of strained-Si and relaxed-SiGe layers. From the comparisons with measurements, it is shown that a modified NQS MOS including steady-state self heating can accurately predict DC characteristics of Strained Silicon MOSFETs.

  19. Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

    International Nuclear Information System (INIS)

    Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2015-01-01

    We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN x /Si-rich SiN x stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10 12 cm −2 , which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN x films deposited with H 2 dilution show better passivation quality of SiN x /Si-rich SiN x stacked layers than those prepared without H 2 dilution. Effective minority carrier lifetime (τ eff ) in c-Si passivated by SiN x /Si-rich SiN x stacked layers is as high as 5.1 ms when H 2 is added during Si-rich SiN x deposition, which is much higher than the case of using Si-rich SiN x films prepared without H 2 dilution showing τ eff of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN x /SiN x stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H 2 gas during Si-rich SiN x film deposition greatly enhances effective minority carrier lifetime (τ eff ). • For a Si-rich SiN x film with refractive index of 2.92, τ eff improves from 3.3 to 5.1 ms by H 2 addition

  20. U-Mo/Al-Si interaction: Influence of Si concentration

    International Nuclear Information System (INIS)

    Allenou, J.; Palancher, H.; Iltis, X.; Cornen, M.; Tougait, O.; Tucoulou, R.; Welcomme, E.; Martin, Ph.; Valot, C.; Charollais, F.; Anselmet, M.C.; Lemoine, P.

    2010-01-01

    Within the framework of the development of low enriched nuclear fuels for research reactors, U-Mo/Al is the most promising option that has however to be optimised. Indeed at the U-Mo/Al interfaces between U-Mo particles and the Al matrix, an interaction layer grows under irradiation inducing an unacceptable fuel swelling. Adding silicon in limited content into the Al matrix has clearly improved the in-pile fuel behaviour. This breakthrough is attributed to an U-Mo/Al-Si protective layer around U-Mo particles appeared during fuel manufacturing. In this work, the evolution of the microstructure and composition of this protective layer with increasing Si concentrations in the Al matrix has been investigated. Conclusions are based on the characterization at the micrometer scale (X-ray diffraction and energy dispersive spectroscopy) of U-Mo7/Al-Si diffusion couples obtained by thermal annealing at 450 deg. C. Two types of interaction layers have been evidenced depending on the Si content in the Al-Si alloy: the threshold value is found at about 5 wt.% but obviously evolves with temperature. It has been shown that for Si concentrations ranging from 2 to 10 wt.%, the U-Mo7/Al-Si interaction is bi-layered and the Si-rich part is located close to the Al-Si for low Si concentrations (below 5 wt.%) and close to the U-Mo for higher Si concentrations. For Si weight fraction in the Al alloy lower than 5 wt.%, the Si-rich sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 , when the other sub-layer (close to U-Mo) is silicon free and made of UAl 3 and U 6 Mo 4 Al 43 . For Si weight concentrations above 5 wt.%, the Si-rich part becomes U 3 (Si, Al) 5 + U(Al, Si) 3 (close to U-Mo) and the other sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 . On the basis of these results and of a literature survey, a scheme is proposed to explain the formation of different types of ILs between U-Mo and Al-Si alloys (i.e. different protective layers).

  1. Porous SiC/SiC composites development for industrial application

    International Nuclear Information System (INIS)

    Maeta, S.; Hinoki, T.

    2014-01-01

    Silicon carbide (SiC) is promising structural materials in nuclear fields due to an excellent irradiation resistance and low activation characteristics. Conventional SiC fibers reinforced SiC matrix (SiC/SiC composites) fabricated by liquid phase sintering (LPS-SiC/SiC composites) have been required high cost and long processing time. And microstructure and mechanical property data of finally obtained LPS-SiC/SiC composites are easily scattered, because quality of the composites depend on personal skill. Thus, conventional LPS-SiC/SiC composites are inadequate for industrial use. In order to overcome these issues, the novel “porous SiC/SiC composites” have been developed by means of liquid phase sintering fabrication process. The composites consist of porous SiC matrix and SiC fibers without conventional carbon interfacial layer. The composites don’t have concerns of the degradation interfacial layer at the severe accident. Porous SiC/SiC composites preform was prepared with a thin sheet shape of SiC, sintering additives and carbon powder mixture by tape casting process which was adopted because of productive and high yielding rate fabrication process. The preform was stacked with SiC fibers and sintered in hot-press at the high temperature in argon environment. The sintered preform was decarburized obtain porous matrix structure by heat-treatment in air. Moreover, mechanical property data scattering of the obtained porous SiC/SiC composites decreased. In the flexural test, the porous SiC/SiC composites showed pseudo-ductile behavior with sufficient strength even after heat treatment at high temperature in air. From these conclusions, it was proven that porous SiC/SiC composites were reliable material at severe environment such as high temperature in air, by introducing tape casting fabrication process that could produce reproducible materials with low cost and simple way. Therefore development of porous SiC/SiC composites for industrial application was

  2. El lenguaje oficial en las instancias de participación local y algunas de sus implicaciones en la legitimación de la desigualdad política

    Directory of Open Access Journals (Sweden)

    César Augusto González Vélez

    2017-01-01

    En este panorama, la pregunta central es ¿qué implicaciones tiene la interiorización del lenguaje oficial en el mantenimiento de unas relaciones asimétricas entre los agentes de la participación política y las instituciones públicas?, este uno de los cuestionamientos que impulsó la investigación: “Organizaciones comunitarias e instancias de participación política de Engativá”, proyecto financiado en el 2014 por la III Convocatoria Interna de Investigación de la Universidad Minuto de Dios, sede principal y del cual se publicó el libro Los convidados de piedra de la participación local. En suma, la tesis que se defiende a lo largo del artículo es que si bien los agentes de la participación (especialmente los representantes populares conciben la interiorización del lenguaje oficial como una “ganancia”, en su proceso de reivindicación ante el Gobierno local, este mismo lenguaje limita la posibilidad instituyente de sus agencias y termina desvirtuando sus saberes, metodologías, intenciones y prácticas.

  3. Biomorphous SiSiC/Al-Si ceramic composites manufactured by squeeze casting: microstructure and mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Zollfrank, C.; Travitzky, N.; Sieber, H.; Greil, P. [Department of Materials Science, Glass and Ceramics, University of Erlangen-Nuernberg (Germany); Selchert, T. [Advanced Ceramics Group, Technical University of Hamburg-Harburg (Germany)

    2005-08-01

    SiSiC/Al-Si composites were fabricated by pressure-assisted infiltration of an Al-Si alloy into porous biocarbon preforms derived from the rattan palm. Al-Si alloy was found in the pore channels of the biomorphous SiSiC preform, whereas SiC and carbon were present in the struts. The formation of a detrimental Al{sub 4}C{sub 3}-phase was not observed in the composites. A bending strength of 200 MPa was measured. The fractured surfaces showed pull-out of the Al-alloy. (Abstract Copyright [2005], Wiley Periodicals, Inc.)

  4. Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

    Science.gov (United States)

    Akiyama, Toru; Hori, Shinsuke; Nakamura, Kohji; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

    2018-04-01

    The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO2 interfaces with various orientations demonstrate characteristic features of the reaction depending on the crystal orientation of SiC: On the Si-face, the H2O molecule is stable in SiO2 and hardly reacts with the SiC substrate, while the O atom of H2O can form Si-O bonds at the C-face interface. Two OH groups are found to be at least necessary for forming new Si-O bonds at the Si-face interface, indicating that the oxidation rate on the Si-face is very low compared with that on the C-face. On the other hand, both the H2O molecule and the OH group are incorporated into the C-face interface, and the energy barrier for OH is similar to that for H2O. By comparing the calculated energy barriers for these reactants with the activation energies of oxide growth rate, we suggest the orientation-dependent rate-limiting processes during wet SiC oxidation.

  5. Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

    Directory of Open Access Journals (Sweden)

    Jiongjiong Mo

    2017-01-01

    Full Text Available The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different VTH shift for different gate dielectrics. Single SiO2 layer shows the worst negative VTH at VG=0 V, while double Si3N4/SiO2 shows negative VTH shift at VG=-5 V, positive VTH shift at VG=10 V, and negligible VTH shift at VG=0 V.

  6. ¿Planifican los tutores la formación de sus residentes?: Investigación realizada en la especialidad de Medicina Familiar y Comunitaria

    Directory of Open Access Journals (Sweden)

    Eduardo Romero-Sánchez

    Full Text Available Introducción. ¿Planifican los tutores la formación de sus residentes? Si es así, ¿cómo lo hacen?, ¿existen diferencias entre lo explicitado en los programas formativos de las distintas especialidades y lo que ocurre realmente en la práctica diaria?, ¿están formados los tutores para planificar su docencia desde el punto de vista pedagógico? Sujetos y métodos. Para dar respuesta a estos interrogantes se ha llevado a cabo un estudio exploratorio de corte descriptivo. En él se ha diseñado, validado y presentado un cuestionario que recoge la opinión contrastada tanto de tutores como de sus respectivos residentes. La población la componen el total de los médicos residentes R1 (promoción 2006-2010; n = 57 y R3 (promoción 2004-2007; n = 58 de Medicina Familiar y Comunitaria de la Región de Murcia, y el total de la población de sus respectivos tutores: tutores de R1 (n = 57 y tutores de R3 (n = 58. Han participado 26 centros de salud que gestionan las tres unidades docentes de la región. Los datos se han analizado mediante el programa SPSS v. 14.0. Resultados y conclusiones. Aunque en la actividad docente de los tutores está muy presente la espontaneidad y la improvisación, existen importantes elementos de programación que hay que saber extraer e identificar porque son propios de un contexto práctico de formación. Se reconoce una mayor satisfacción de los implicados cuando el proceso formativo está más planificado.

  7. Nanocatalytic growth of Si nanowires from Ni silicate coated SiC nanoparticles on Si solar cell.

    Science.gov (United States)

    Parida, Bhaskar; Choi, Jaeho; Ji, Hyung Yong; Park, Seungil; Lim, Gyoungho; Kim, Keunjoo

    2013-09-01

    We investigated the nanocatalytic growth of Si nanowires on the microtextured surface of crystalline Si solar cell. 3C-SiC nanoparticles have been used as the base for formation of Ni silicate layer in a catalytic reaction with the Si melt under H2 atmosphere at an annealing temperature of 1100 degrees C. The 10-nm thick Ni film was deposited after the SiC nanoparticles were coated on the microtextured surface of the Si solar cell by electron-beam evaporation. SiC nanoparticles form a eutectic alloy surface of Ni silicate and provide the base for Si supersaturation as well as the Ni-Si alloy layer on Si substrate surface. This bottom reaction mode for the solid-liquid-solid growth mechanism using a SiC nanoparticle base provides more stable growth of nanowires than the top reaction mode growth mechanism in the absence of SiC nanoparticles. Thermally excited Ni nanoparticle forms the eutectic alloy and provides collectively excited electrons at the alloy surface, which reduces the activation energy of the nanocatalytic reaction for formation of nanowires.

  8. Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

    Science.gov (United States)

    Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

    2012-11-01

    We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

  9. Interfacial characterization of CVI-SiC/SiC composites

    International Nuclear Information System (INIS)

    Yang, W.; Kohyama, A.; Noda, T.; Katoh, Y.; Hinoki, T.; Araki, H.; Yu, J.

    2002-01-01

    The mechanical properties of the interfaces of two families of chemical vapor infiltration SiC/SiC composites, advanced Tyranno-SA and Hi-Nicalon fibers reinforced SiC/SiC composites with various carbon and SiC/C interlayers, were investigated by single fiber push-out/push-back tests. Interfacial debonding and fibers sliding mainly occurred adjacent to the first carbon layer on the fibers. The interfacial debonding strengths and frictional stresses for both Tyranno-SA/SiC and Hi-Nicalon/SiC composites were correlated with the first carbon layer thickness. Tyranno-SA/SiC composites exhibited much larger interfacial frictional stresses compared to Hi-Nicalon/SiC composites. This was assumed to be mainly contributed by the rather rough surface of the Tyranno-SA fiber

  10. Research on a Micro-Nano Si/SiGe/Si Double Heterojunction Electro-Optic Modulation Structure

    Directory of Open Access Journals (Sweden)

    Song Feng

    2018-01-01

    Full Text Available The electro-optic modulator is a very important device in silicon photonics, which is responsible for the conversion of optical signals and electrical signals. For the electro-optic modulator, the carrier density of waveguide region is one of the key parameters. The traditional method of increasing carrier density is to increase the external modulation voltage, but this way will increase the modulation loss and also is not conducive to photonics integration. This paper presents a micro-nano Si/SiGe/Si double heterojunction electro-optic modulation structure. Based on the band theory of single heterojunction, the barrier heights are quantitatively calculated, and the carrier concentrations of heterojunction barrier are analyzed. The band and carrier injection characteristics of the double heterostructure structure are simulated, respectively, and the correctness of the theoretical analysis is demonstrated. The micro-nano Si/SiGe/Si double heterojunction electro-optic modulation is designed and tested, and comparison of testing results between the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation and the micro-nano Silicon-On-Insulator (SOI micro-ring electro-optic modulation, Free Spectrum Range, 3 dB Bandwidth, Q value, extinction ratio, and other parameters of the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation are better than others, and the modulation voltage and the modulation loss are lower.

  11. Development of nanostructured SUS316L-2%TiC with superior tensile properties

    Science.gov (United States)

    Sakamoto, T.; Kurishita, H.; Matsuo, S.; Arakawa, H.; Takahashi, S.; Tsuchida, M.; Kobayashi, S.; Nakai, K.; Terasawa, M.; Yamasaki, T.; Kawai, M.

    2015-11-01

    Structural materials used in radiation environments require radiation tolerance and sufficient mechanical properties in the controlled state. In order to offer SUS316L austenitic stainless steel with the assumed requirements, nanostructured SUS316L with TiC addition of 2% (SUS316L-2TiC) that is capable of exhibiting enhanced tensile ductility and flow strength sufficient for structural applications was fabricated by advanced powder metallurgical methods. The methods include MA (Mechanical Alloying), HIP (Hot Isostatic Pressing), GSMM (Grain boundary Sliding Microstructural Modification) for ductility enhancement, cold rolling at temperatures below Md (the temperature where the martensite phase occurs by plastic deformation) for phase transformation from austenite to martensite and heat treatment for reverse transformation from martensite to austenite. It is shown that the developed SUS316L-2TiC exhibits ultrafine grains with sizes of 90-270 nm, accompanied by TiC precipitates with 20-50 nm in grain interior and 70-110 nm at grain boundaries, yield strengths of 1850 to 900 MPa, tensile strengths of 1920 to 1100 MPa and uniform elongations of 0.6-21%, respectively, depending on the heat treatment temperature after rolling at -196 °C.

  12. Low dose irradiation performance of SiC interphase SiC/SiC composites

    International Nuclear Information System (INIS)

    Snead, L.L.; Lowden, R.A.; Strizak, J.; More, K.L.; Eatherly, W.S.; Bailey, J.; Williams, A.M.; Osborne, M.C.; Shinavski, R.J.

    1998-01-01

    Reduced oxygen Hi-Nicalon fiber reinforced composite SiC materials were densified with a chemically vapor infiltrated (CVI) silicon carbide (SiC) matrix and interphases of either 'porous' SiC or multilayer SiC and irradiated to a neutron fluence of 1.1 x 10 25 n m -2 (E>0.1 MeV) in the temperature range of 260 to 1060 C. The unirradiated properties of these composites are superior to previously studied ceramic grade Nicalon fiber reinforced/carbon interphase materials. Negligible reduction in the macroscopic matrix microcracking stress was observed after irradiation for the multilayer SiC interphase material and a slight reduction in matrix microcracking stress was observed for the composite with porous SiC interphase. The reduction in strength for the porous SiC interfacial material is greatest for the highest irradiation temperature. The ultimate fracture stress (in four point bending) following irradiation for the multilayer SiC and porous SiC interphase materials was reduced by 15% and 30%, respectively, which is an improvement over the 40% reduction suffered by irradiated ceramic grade Nicalon fiber materials fabricated in a similar fashion, though with a carbon interphase. The degradation of the mechanical properties of these composites is analyzed by comparison with the irradiation behavior of bare Hi-Nicalon fiber and Morton chemically vapor deposited (CVD) SiC. It is concluded that the degradation of these composites, as with the previous generation ceramic grade Nicalon fiber materials, is dominated by interfacial effects, though the overall degradation of fiber and hence composite is reduced for the newer low-oxygen fiber. (orig.)

  13. Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

    DEFF Research Database (Denmark)

    Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

    2014-01-01

    Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects.......Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects....

  14. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

    Science.gov (United States)

    Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

    2018-03-01

    The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

  15. Applications of Si/SiGe heterostructures to CMOS devices

    International Nuclear Information System (INIS)

    Sidek, R.M.

    1999-03-01

    For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

  16. Irradiation effect on Nite-SiC/SiC composites

    International Nuclear Information System (INIS)

    Hinoki, T.; Choi, Y.B.; Kohyama, A.; Ozawa, K.

    2007-01-01

    Full text of publication follows: Silicon carbide (SiC) and SiC composites are significantly attractive materials for nuclear application in particular due to exceptional low radioactivity, excellent high temperature mechanical properties and chemical stability. Despite of the excellent potential of SiC/SiC composites, the prospect of industrialization has not been clear mainly due to the low productivity and the high material cost. Chemical vapor infiltration (CVI) method can produce the excellent SiC/SiC composites with highly crystalline and excellent mechanical properties. It has been reported that the high purity SiC/SiC composites reinforced with highly crystalline fibers and fabricated by CVI method is very stable to neutron irradiation. However the production cost is high and it is difficult to fabricate thick and dense composites by CVI method. The novel processing called Nano-powder Infiltration and Transient Eutectic Phase (NITE) Processing has been developed based on the liquid phase sintering (LPS) process modification. The NITE processing can achieve both the excellent material quality and the low processing cost. The productivity of the processing is also excellent, and various kinds of shape and size of SiC/SiC composites can be produced by the NITE processing. The NITE processing can form highly crystalline matrix, which is requirement for nuclear application. The objective of this work is to understand irradiation effect of the NITESiC/SiC composites. The SiC/SiC composites used were reinforced with high purity SiC fibers, Tyranno TM SA and fabricated by the NITE method. The NITE-SiC/SiC composite bars and reference monolithic SiC bars fabricated by CVI and NITE were irradiated at up to 1.0 dpa and 600-1000 deg. C at JMTR, Japan. Mechanical properties of non-irradiated and irradiated NITESiC/ SiC composites bars were evaluated by tensile tests. Monolithic SiC bars were evaluated by flexural tests. The fracture surface was examined by SEM. Ultimate

  17. Stability analysis of SiO2/SiC multilayer coatings

    International Nuclear Information System (INIS)

    Fu Zhiqiang; Jean-Charles, R.

    2006-01-01

    The stability behaviours of SiC coatings and SiO 2 /SiC coatings in helium with little impurities are studied by HSC Chemistry 4.1, the software for analysis of Chemical reaction and equilibrium in multi-component complex system. It is found that in helium with a low partial pressure of oxidative impurities under different total pressure, the key influence factor controlling T cp of SiC depends is the partial pressure of oxidative impurities; T cp of SiC increases with the partial pressure of oxidative impurities. In helium with a low partial pressure of different impurities, the key influence factor of T cs of SiO 2 are both the partial pressure of impurities and the amount of impurities for l mol SiO 2 ; T cs of SiO 2 increases with the partial pressure of oxidative impurities at the same amount of the impurities for 1 mol SiO 2 while it decreases with the amount of the impurities for 1 mm SiO 2 at the same partial pressure of the impurities. The influence of other impurities on T cp of SiC in He-O 2 is studied and it is found that CO 2 , H 2 O and N-2 increase T cp of SiC in He-O 2 while H 2 , CO and CH 4 decrease T cp of SiC He-O 2 . When there exist both oxidative impurities and reductive impurities, their effect on T cs of SiO 2 can be suppressed by the other. In HTR-10 operation atmosphere, SiO 2 /SiC coatings can keep stable status at higher temperature than SiC coatings, so SiO 2 /SiC coatings is more suitable to improve the oxidation resistance of graphite in HTR-10 operation atmosphere compared with SiC coatings. (authors)

  18. Si-O-Si bond-angle distribution in vitreous silica from first-principles 29Si NMR analysis

    International Nuclear Information System (INIS)

    Mauri, Francesco; Pasquarello, Alfredo; Pfrommer, Bernd G.; Yoon, Young-Gui; Louie, Steven G.

    2000-01-01

    The correlation between 29 Si chemical shifts and Si-O-Si bond angles in SiO 2 is determined within density-functional theory for the full range of angles present in vitreous silica. This relation closely reproduces measured shifts of crystalline polymorphs. The knowledge of the correlation allows us to reliably extract from the experimental NMR spectrum the mean (151 degree sign ) and the standard deviation (11 degree sign ) of the Si-O-Si angular distribution of vitreous silica. In particular, we show that the Mozzi-Warren Si-O-Si angular distribution is not consistent with the NMR data. This analysis illustrates the potential of our approach for structural determinations of silicate glasses. (c) 2000 The American Physical Society

  19. Evaluación de un proyecto estratégico de administración de capacidad considerando flexibilidad operativa y opciones reales

    Directory of Open Access Journals (Sweden)

    Camilo Andrés Micán-Rincón

    2015-01-01

    Full Text Available El desarrollo competitivo empresarial se basa en la satisfacción de las necesidades cambiantes de los clientes, por lo cual las empresas deben integrar la flexibilidad en la toma de decisiones para adaptar rápidamente su sistema productivo a dichos cambios. Las decisiones estratégicas de inversión en administración de la capacidad son de gran importancia en este proceso, debido a su carácter financiero y de largo plazo, por consiguiente, es necesario que estas sean evaluadas con precisión. Este documento plantea la evaluación de estas decisiones involucrando la valoración de la flexibilidad, tanto operativa como financiera, en una empresa del sector papel en el Valle del Cauca. En relación con esto, se caracterizaron las decisiones y los criterios a tener en cuenta al momento de evaluarlas usando como base la revisión de bibliografía especializada y el juicio de expertos. Por último, mediante un caso de estudio se ejemplificó el modelo propuesto. Siguiendo esta metodología se deben tener en cuenta tanto los criterios cuantitativos como los cualitativos para la evaluación de proyectos estratégicos de administración de la capacidad, siendo al análisis de opciones reales un elemento fundamental para evaluar la flexibilidad de la decisión.

  20. Interfacial microstructure of NiSi x/HfO2/SiO x/Si gate stacks

    International Nuclear Information System (INIS)

    Gribelyuk, M.A.; Cabral, C.; Gusev, E.P.; Narayanan, V.

    2007-01-01

    Integration of NiSi x based fully silicided metal gates with HfO 2 high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi x film. Ni content varies near the NiSi/HfO x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi x /HfO 2 interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi x /HfO x was found higher than that of poly-Si/HfO 2 , likely due to compositional non-uniformity of NiSi x . No intermixing between Hf, Ni and Si beyond interfacial roughness was observed

  1. La educación secundaria en Perú y sus profesores: cambios y continuidades

    Directory of Open Access Journals (Sweden)

    Jerson Chuquilin Cubas

    2011-01-01

    Full Text Available Desde el momento en el que se constituyó el nuevo Estado peruano independiente del poder político español, el poder estatal se encargó de fundar y normar la organización y funcionamiento de las instituciones que conforman lo que hoy se conoce como sistema educativo. Dentro de este proceso, la educación secundaria ha experimentado desarrollos peculiares que la diferencian de los otros niveles educativos en lo que se refiere a las instituciones en las que se imparte, sus propósitos, la formación de sus profesores, las posiciones instituidas y el sentido asignado al quehacer docente y directivo. Así, la educación secundaria nació ligada a la educación superior universitaria y al servicio de una minoría privilegiada. Sus profesores, de una élite privilegiada al servicio del proyecto homogeneizador del Estado, han transitado hacia una situación de deterioro de sus condiciones de vida y desvalorización de su trabajo.

  2. José Manuel Esteve : sus contribuciones al estudio de la profesión docente

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    Julio Vera

    2013-07-01

    Full Text Available Este artículo es un análisis de las contribuciones del profesor Esteve al estudio de la profesión docente. Para ello se hace un repaso a sus rasgos de personalidad, a los hitos más relevantes de su vida profesional y a algunas de sus publicaciones desde sus comienzos como profesor universitario en 1973 hasta su fallecimiento en el año 2010.This article analyzes the contributions of Professor Esteve around the teaching profession. His personality traits, the highlights of his career and some of his publications from his beginnings as a university professor in 1973 until his death in 2010 are the core of this study.

  3. Luminescence properties of Si-capped β-FeSi{sub 2} nanodots epitaxially grown on Si(001) and (111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Amari, Shogo; Ichikawa, Masakazu [Department of Applied Physics, Graduate School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan); Nakamura, Yoshiaki, E-mail: nakamura@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan); PRESTO, JST, 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan)

    2014-02-28

    We studied the luminescence properties of Si-capped β-FeSi{sub 2} nanodots (NDs) epitaxially grown on Si substrates by using photoluminescence (PL) and electroluminescence (EL) spectroscopies. Codepositing Fe and Si on ultrathin SiO{sub 2} films induced the self-assembly of epitaxial β-FeSi{sub 2} NDs. The PL spectra of the Si/β-FeSi{sub 2} NDs/Si structure depended on the crystal orientation of the Si substrate. These structures exhibited a broad PL peak near 0.8 eV on both Si(001) and (111) substrates. The PL intensity depended on the shape of the β-FeSi{sub 2} NDs. For the flat NDs, which exhibited higher PL intensity, we also recorded EL spectra. We explained the luminescence properties of these structures by the presence of nanostructured Si offering radiative electronic states in the Si cap layers, generated by nano-stressors for upper Si layer: the strain-relaxed β-FeSi{sub 2} NDs.

  4. Structure of BT-3984, a member of the SusD/RagB family of nutrient-binding molecules

    International Nuclear Information System (INIS)

    Bakolitsa, Constantina; Xu, Qingping; Rife, Christopher L.; Abdubek, Polat; Astakhova, Tamara; Axelrod, Herbert L.; Carlton, Dennis; Chen, Connie; Chiu, Hsiu-Ju; Clayton, Thomas; Das, Debanu; Deller, Marc C.; Duan, Lian; Ellrott, Kyle; Farr, Carol L.; Feuerhelm, Julie; Grant, Joanna C.; Grzechnik, Anna; Han, Gye Won; Jaroszewski, Lukasz; Jin, Kevin K.; Klock, Heath E.; Knuth, Mark W.; Kozbial, Piotr; Krishna, S. Sri; Kumar, Abhinav; Lam, Winnie W.; Marciano, David; McMullan, Daniel; Miller, Mitchell D.; Morse, Andrew T.; Nigoghossian, Edward; Nopakun, Amanda; Okach, Linda; Puckett, Christina; Reyes, Ron; Tien, Henry J.; Trame, Christine B.; Bedem, Henry van den; Weekes, Dana; Hodgson, Keith O.; Wooley, John; Elsliger, Marc-André; Deacon, Ashley M.; Godzik, Adam; Lesley, Scott A.; Wilson, Ian A.

    2010-01-01

    The crystal structure of BT-3984, a SusD-family protein, reveals a TPR N-terminal region providing support for a loop-rich C-terminal subdomain and suggests possible interfaces involved in sus complex formation. The crystal structure of the Bacteroides thetaiotaomicron protein BT-3984 was determined to a resolution of 1.7 Å and was the first structure to be determined from the extensive SusD family of polysaccharide-binding proteins. SusD is an essential component of the sus operon that defines the paradigm for glycan utilization in dominant members of the human gut microbiota. Structural analysis of BT-3984 revealed an N-terminal region containing several tetratricopeptide repeats (TPRs), while the signature C-terminal region is less structured and contains extensive loop regions. Sequence and structure analysis of BT-3984 suggests the presence of binding interfaces for other proteins from the polysaccharide-utilization complex

  5. Conceptos Basicos Sobre el Gas Natural

    Energy Technology Data Exchange (ETDEWEB)

    2016-08-01

    El gas natural abastece cerca de 150.000 vehiculos en los Estados Unidos y aproximadamente 22 millones de vehiculos en todo el mundo. Los vehiculos de gas natural (NGV, por sus siglas en ingles) son una buena opcion para las flotas de vehiculos de alto kilometraje, tales como autobuses, taxis, vehiculos de recoleccion de basura, los cuales son alimentados centralmente u operan dentro de un area limitada o a lo largo de una ruta con estaciones de servicio de gas natural. Las ventajas del gas natural como combustible alternativo incluyen su disponibilidad interna, la red de distribucion establecida, un costo relativamente bajo, y los beneficios de las emisiones.

  6. América Latina a inicios de la segunda década del siglo XXI: entre el regionalismo estratégico y la regionalización fragmentada

    Directory of Open Access Journals (Sweden)

    Lincoln Bizzozero

    2011-01-01

    Full Text Available El artículo analiza la evolución del regionalismo en América Latina desde los años noventa. Expone las opciones que se plantean a los países en sus políticas exteriores frente a las iniciativas de Estados Unidos y los cambios en el sistema internacional. Se expone la importancia funcional de las potencias emergentes (PEMS y las regiones en la fase actual del capitalismo. Finalmente el artículo analiza las perspectivas del regionalismo en América Latina tanto en el sistema internacional como en la construcción de un modelo de gobernanza regional.

  7. Thermal shock properties of 2D-SiCf/SiC composites

    International Nuclear Information System (INIS)

    Lee, Sang Pill; Lee, Jin Kyung; Son, In Soo; Bae, Dong Su; Kohyama, Akira

    2012-01-01

    This paper dealt with the thermal shock properties of SiC f /SiC composites reinforced with two dimensional SiC fabrics. SiC f /SiC composites were fabricated by a liquid phase sintering process, using a commercial nano-size SiC powder and oxide additive materials. An Al 2 O 3 –Y 2 O 3 –SiO 2 powder mixture was used as a sintering additive for the consolidation of SiC matrix region. In this composite system, Tyranno SA SiC fabrics were also utilized as a reinforcing material. The thermal shock test for SiC f /SiC composites was carried out at the elevated temperature. Both mechanical strength and microstructure of SiC f /SiC composites were investigated by means of optical microscopy, SEM and three point bending test. SiC f /SiC composites represented a dense morphology with a porosity of about 8.2% and a flexural strength of about 160 MPs. The characterization of SiC f /SiC composites was greatly affected by the history of cyclic thermal shock. Especially, SiC f /SiC composites represented a reduction of flexural strength at the thermal shock temperature difference higher than 800 °C.

  8. SiC/SiC Cladding Materials Properties Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Snead, Mary A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Singh, Gyanender P. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-08-01

    When a new class of material is considered for a nuclear core structure, the in-pile performance is usually assessed based on multi-physics modeling in coordination with experiments. This report aims to provide data for the mechanical and physical properties and environmental resistance of silicon carbide (SiC) fiber–reinforced SiC matrix (SiC/SiC) composites for use in modeling for their application as accidenttolerant fuel cladding for light water reactors (LWRs). The properties are specific for tube geometry, although many properties can be predicted from planar specimen data. This report presents various properties, including mechanical properties, thermal properties, chemical stability under normal and offnormal operation conditions, hermeticity, and irradiation resistance. Table S.1 summarizes those properties mainly for nuclear-grade SiC/SiC composites fabricated via chemical vapor infiltration (CVI). While most of the important properties are available, this work found that data for the in-pile hydrothermal corrosion resistance of SiC materials and for thermal properties of tube materials are lacking for evaluation of SiC-based cladding for LWR applications.

  9. Biochemical and Molecular Characterization of RcSUS1, a Cytosolic Sucrose Synthase Phosphorylated in Vivo at Serine 11 in Developing Castor Oil Seeds*

    Science.gov (United States)

    Fedosejevs, Eric T.; Ying, Sheng; Park, Joonho; Anderson, Erin M.; Mullen, Robert T.; She, Yi-Min; Plaxton, William C.

    2014-01-01

    Sucrose synthase (SUS) catalyzes the UDP-dependent cleavage of sucrose into UDP-glucose and fructose and has become an important target for improving seed crops via metabolic engineering. A UDP-specific SUS homotetramer composed of 93-kDa subunits was purified to homogeneity from the triacylglyceride-rich endosperm of developing castor oil seeds (COS) and identified as RcSUS1 by mass spectrometry. RcSUS1 transcripts peaked during early development, whereas levels of SUS activity and immunoreactive 93-kDa SUS polypeptides maximized during mid-development, becoming undetectable in fully mature COS. The cytosolic location of the enzyme was established following transient expression of RcSUS1-enhanced YFP in tobacco suspension cells and fluorescence microscopy. Immunological studies using anti-phosphosite-specific antibodies revealed dynamic and high stoichiometric in vivo phosphorylation of RcSUS1 at its conserved Ser-11 residue during COS development. Incorporation of 32Pi from [γ-32P]ATP into a RcSUS1 peptide substrate, alongside a phosphosite-specific ELISA assay, established the presence of calcium-dependent RcSUS1 (Ser-11) kinase activity. Approximately 10% of RcSUS1 was associated with COS microsomal membranes and was hypophosphorylated relative to the remainder of RcSUS1 that partitioned into the soluble, cytosolic fraction. Elimination of sucrose supply caused by excision of intact pods of developing COS abolished RcSUS1 transcription while triggering the progressive dephosphorylation of RcSUS1 in planta. This did not influence the proportion of RcSUS1 associated with microsomal membranes but instead correlated with a subsequent marked decline in SUS activity and immunoreactive RcSUS1 polypeptides. Phosphorylation at Ser-11 appears to protect RcSUS1 from proteolysis, rather than influence its kinetic properties or partitioning between the soluble cytosol and microsomal membranes. PMID:25313400

  10. Resultados electorales y orientación del voto en los comicios municipales de 1995

    Directory of Open Access Journals (Sweden)

    IRENE DELGADO SOTILLOS

    1999-01-01

    Full Text Available El presente artículo pretende hacer un balance de las elecciones municipales de 1995 examinando desde dos perspectivas analíticas sus principales elementos. Se organiza el trabajo partiendo de un análisis agregado que explora los niveles de movilización, orientación del voto municipal y preferencias de los electores. Posteriormente, mediante técnicas multivariables, se determinan los elementos más influyentes en las opciones de voto a los dos partidos mayoritarios. La nacionalización de la convocatoria municipal y la fuerte partidificación son elementos que confirman la hipótesis de la peculiaridad de estas elecciones municipales con un alto contenido de "primarias". Ello condiciona sus resultados, que además han estado influidos por su ubicación en el calendario electoral, el clima de descontento político nacional y las posibilidades de alternancia política.

  11. Exceptional cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si heterostructures

    Science.gov (United States)

    Chen, Da; Wang, Dadi; Chang, Yongwei; Li, Ya; Ding, Rui; Li, Jiurong; Chen, Xiao; Wang, Gang; Guo, Qinglei

    2018-01-01

    The cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si structures after thermal annealing was investigated. The crack formation position is found to closely correlate with the thickness of the buried Si0.70Ge0.30 layer. For H-implanted Si containing a buried 3-nm-thick B-doped Si0.70Ge0.30 layer, localized continuous cracking occurs at the interfaces on both sides of the Si0.70Ge0.30 interlayer. Once the thickness of the buried Si0.70Ge0.30 layer increases to 15 and 70 nm, however, a continuous sharp crack is individually observed along the interface between the Si substrate and the B-doped Si0.70Ge0.30 interlayer. We attribute this exceptional cracking behavior to the existence of shear stress on both sides of the buried Si0.70Ge0.30 layer and the subsequent trapping of hydrogen, which leads to a crack in a well-controlled manner. This work may pave the way for high-quality Si or SiGe membrane transfer in a feasible manner, thus expediting its potential applications to ultrathin silicon-on-insulator (SOI) or silicon-germanium-on-insulator (SGOI) production.

  12. Effects of the Buffer Layers on the Adhesion and Antimicrobial Properties of the Amorphous ZrAlNiCuSi Films

    Science.gov (United States)

    Chiang, Pai-Tsung; Chen, Guo-Ju; Jian, Sheng-Rui; Shih, Yung-Hui

    2011-06-01

    To extend the practical applications of the bulk metallic glasses (BMGs), the preparation of the metallic glass coatings on various substrates becomes an important research issue. Among the interfacial properties of the coatings, the adhesion between films and substrates is the most crucial. In this study, amorphous Zr61Al7.5Ni10Cu17.5Si4 (ZrAlNiCuSi) thin films were deposited on SUS304 stainless steel at various sputtering powers by DC sputtering. According to the scratch tests, the introduction of the Cr and Ti buffer layers effectively improves the adhesion between the amorphous thin films and substrate without changing the surface properties, such as roughness and morphology. The antimicrobial results show that the biological activities of these microbes, except Acinetobacter baumannii, are effectively suppressed during the test period.

  13. Microstructures and Mechanical Properties of Austempering SUS440 Steel Thin Plates

    Directory of Open Access Journals (Sweden)

    Cheng-Yi Chen

    2016-02-01

    Full Text Available SUS440 is a high-carbon stainless steel, and its martensite matrix has high heat resistance, high corrosion resistance, and high pressure resistance. It has been widely used in mechanical parts and critical materials. However, the SUS440 martempered matrix has reliability problems in thin plate applications and thus research uses different austempering heat treatments (tempering temperature: 200 °C–400 °C to obtain a matrix containing bainite, retained austenite, martensite, and the M7C3 phase to investigate the relationships between the resulting microstructure and tensile mechanical properties. Experimental data showed that the austempering conditions of the specimen affected the volume fraction of phases and distribution of carbides. After austenitizing heat treatment (1080 °C for 30 min, the austempering of the SUS440 thin plates was carried out at a salt-bath temperature 300 °C for 120 min and water quenching was then used to obtain the bainite matrix with fine carbides, with the resulting material having a higher tensile fracture strength and average hardness (HRA 76 makes it suitable for use as a high-strength thin plate for industrial applications.

  14. EL FACTOR DE SOSTENIBILIDAD: DISEÑOS ALTERNATIVOS Y VALORACIÓN FINANCIERO - ACTUARIAL DE SUS EFECTOS SOBRE LOS PARÁMETROS DEL SISTEMA

    Directory of Open Access Journals (Sweden)

    Robert Meneu Gaya

    2013-05-01

    Full Text Available La Ley 27/2011, que reforma el sistema de pensiones español, introduce el factor de sostenibilidad, un instrumento que ajusta automáticamente los parámetros del sistema a la evolución de la esperanza de vida a partir del año 2027 y con revisiones cada 5 años, aunque la reciente Ley Orgánica 2/2012 de Estabilidad Presupuestaria y Sostenibilidad Financiera abre la posibilidad de que se anticipe su entrada en vigor si se proyecta un déficit a largo plazo en el sistema de pensiones. Dado que el diseño concreto del factor de sostenibilidad está pendiente, resulta relevante analizar cómo otros países de la Unión Europea han incorporado instrumentos similares en sus sistemas de pensiones y, desde esas experiencias, ofrecer diseños alternativos para el caso español, valorando los efectos de cada uno de ellos sobre los parámetros del sistema, utilizando para ello las recientes proyecciones de esperanza de vida del Instituto Nacional de Estadística. La Ley 27/2011, que reforma el sistema de pensiones español, introduce el factor de sostenibilidad, un instrumento que ajusta automáticamente los parámetros del sistema a la evolución de la esperanza de vida a partir del año 2027 y con revisiones cada 5 años, aunque la reciente Ley Orgánica 2/2012 de Estabilidad Presupuestaria y Sostenibilidad Financiera abre la posibilidad de que se anticipe su entrada en vigor si se proyecta un déficit a largo plazo en el sistema de pensiones. Dado que el diseño concreto del factor de sostenibilidad está pendiente, resulta relevante analizar cómo otros países de la Unión Europea han incorporado instrumentos similares en sus sistemas de pensiones y, desde esas experiencias, ofrecer diseños alternativos para el caso español, valorando los efectos de cada uno de ellos sobre los parámetros del sistema, utilizando para ello las recientes proyecciones de esperanza de vida del Instituto Nacional de Estadística.

  15. A dimensão política do processo de formação de pessoal auxiliar: a enfermagem rumo ao SUS La dimensión política del proceso de formación del personal auxiliar: la enfermeria rumbo al SUS (Sistema Único de Salud The political dimension of auxiliary personnel education: nursing and the Unified Health System (SUS

    Directory of Open Access Journals (Sweden)

    Alva Helena de Almeida

    2002-10-01

    Full Text Available A mudança de administração no município de São Paulo em 1989 inovou a gestão dos serviços de saúde, objetivando a implementação do Sistema Único de Saúde (SUS e tendo como uma estratégia fundamental a qualificação dos trabalhadores. Este artigo objetiva analisar a incorporação dos princípios do SUS aos cursos de formação de auxiliares de enfermagem. Partindo dos conceitos que nutriram a Reforma Sanitária e a construção dos princípios do SUS, o caminho metodológico empreendido utilizou entrevistas com os coordenadores do programa. A análise permitiu reconhecer que a política e as práticas da gestão municipal estavam comprometidas com o SUS; priorizou-se a qualificação dos trabalhadores da saúde que não haviam tido oportunidade; adotou-se uma pedagogia voltada à "transformação" dos agentes; os coordenadores motivaram-se a desenvolver a qualificação, reconhecendo o processo como uma ferramenta de implementação do SUS; os coordenadores do nível regional apreenderam a dimensão técnica do processo, isolada da política.El cambio de administración en el Municipio de São Paulo, en 1989, innovó la gestión de los servicios de salud, buscando la implementación del Sistema Único de Salud, (SUS teniendo como estrategia fundamental la cualificación de los trabajadores. Este artículo analizó la incorporación de los principios del SUS en la formación de auxiliares de enfermería. Se realizaron entrevistas con los coordinadores del programa y su análisis permitió reconocer que: las políticas y prácticas de la gestión municipal estaban comprometidas con el SUS; se priorizó la cualificación de los trabajadores de la salud que no habían tenido oportunidad; fue adoptada una pedagogía orientada hacia la "transformación" de los agentes; los coordinadores se motivaron para desarrollar esa cualificación, reconociendo el proceso como una herramienta para implementar el SUS; los coordinadores regionales

  16. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process

    Science.gov (United States)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-01

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  17. A novel link between Sus1 and the cytoplasmic mRNA decay machinery suggests a broad role in mRNA metabolism

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    Llopis Ana

    2010-03-01

    Full Text Available Abstract Background Gene expression is achieved by the coordinated action of multiple factors to ensure a perfect synchrony from chromatin epigenetic regulation through to mRNA export. Sus1 is a conserved mRNA export/transcription factor and is a key player in coupling transcription initiation, elongation and mRNA export. In the nucleus, Sus1 is associated to the transcriptional co-activator SAGA and to the NPC associated complex termed TREX2/THSC. Through these associations, Sus1 mediates the nuclear dynamics of different gene loci and facilitate the export of the new transcripts. Results In this study, we have investigated whether the yeast Sus1 protein is linked to factors involved in mRNA degradation pathways. We provide evidence for genetic interactions between SUS1 and genes coding for components of P-bodies such as PAT1, LSM1, LSM6 and DHH1. We demonstrate that SUS1 deletion is synthetic lethal with 5'→3' decay machinery components LSM1 and PAT1 and has a strong genetic interaction with LSM6 and DHH1. Interestingly, Sus1 overexpression led to an accumulation of Sus1 in cytoplasmic granules, which can co-localise with components of P-bodies and stress granules. In addition, we have identified novel physical interactions between Sus1 and factors associated to P-bodies/stress granules. Finally, absence of LSM1 and PAT1 slightly promotes the Sus1-TREX2 association. Conclusions In this study, we found genetic and biochemical association between Sus1 and components responsible for cytoplasmic mRNA metabolism. Moreover, Sus1 accumulates in discrete cytoplasmic granules, which partially co-localise with P-bodies and stress granules under specific conditions. These interactions suggest a role for Sus1 in gene expression during cytoplasmic mRNA metabolism in addition to its nuclear function.

  18. Effect of pH on the corrosion behaviour of SUS321 in the ammonia aqueous solution

    International Nuclear Information System (INIS)

    Park, Sang Yoon; Jeong, Y. H.; Baek, J. H.; Choi, B. K.; Lee, M. H.; Choi, B. S.; Yoon, J. H.; Lee, D. J.

    2003-02-01

    The corrosion characteristics of SUS321 for pressure vessel of SMART in pure water, ammonia aqueous solutions of pH 8.5 ∼ 11.5 at 300 .deg. C were evaluated by using static autoclaves. SUS321 specimen in the high temperature ammonia aqueous solution has weight gain or loss by the 4 reactions. And it depends on the refreshing period of the aqueous solution. So additional experiments by recirculating loop system were required to evaluate the corrosion behaviour of SUS321 in the ammonia aqueous solution

  19. Electrical properties of Si/Si1-xGex/Si inverted modulation doped structures

    International Nuclear Information System (INIS)

    Sadeghzadeh, M.A.

    1998-12-01

    This thesis is a report of experimental investigations of growth strategy and electrical properties of Si/Si 1-x Ge x /Si inverted Modulation Doped (MD) structures grown by solid source Molecular Beam Epitaxy (MBE). If the grown Si layer is B-doped at some distance (as spacer) before or after the alloy layer, this remote doping induces the formation of a quasi Two Dimensional Hole Gas (2-DHG) near to the inverted (SiGe on Si) or normal (Si on SiGe) heterointerfaces of the Si/Si 1-x Ge x /Si quantum well, respectively. The latter arrangement is the well known 'normal' MD structure but the former one is the so-called 'inverted' MD structure which is of great interest for Field Effect Transistor (FET) applications. A reproducible growth strategy was employed by the use of a thick (400nm) Si cap for inverted MD structures with Ge composition in the range of 16-23%. Boron segregation and cap surface charges are significant in these inverted structures with small ( 20nm) spacer layers, respectively. It was demonstrated by secondary ion mass spectroscopy (SIMS) that boron segregation, which causes a reduction in the effective spacer dimension, can be suppressed by growth interruption after boron doping. The enhancement in hole sheet density with increasing Si cap layer thickness, is attributed to a reduction in the influence of positive surface charges in these structures. Top-gated devices were fabricated using these structures and the hole sheet density could be varied by applying a voltage to the metal-semiconductor gate, and the maximum Hall mobility of 5550 cm 2 V -1 s -1 with 4.2x10 11 cm -2 was measured (at 1.6K) in these structures. Comparison of measured Hall mobility (at 4.2K) as a function of hole sheet density in normal and inverted MD structures implies that both 2-DHG confined at normal and/or inverted structures are subjected to very similar interface charge, roughness, and alloy scattering potentials. Low temperatures magnetotransport measurements (down to

  20. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    Energy Technology Data Exchange (ETDEWEB)

    Ping Wang, Y., E-mail: yanping.wang@insa-rennes.fr; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O. [UMR FOTON, CNRS, INSA Rennes, Rennes F-35708 (France); Stodolna, J.; Ponchet, A. [CEMES-CNRS, Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, 31055 Toulouse Cedex 04 (France); Bahri, M.; Largeau, L.; Patriarche, G. [Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis 91460 (France); Magen, C. [LMA, INA-ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain)

    2015-11-09

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

  1. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    International Nuclear Information System (INIS)

    Ping Wang, Y.; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O.; Stodolna, J.; Ponchet, A.; Bahri, M.; Largeau, L.; Patriarche, G.; Magen, C.

    2015-01-01

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth

  2. Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl{sub 2}/Si powder source

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Erchao [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Ueki, Akiko [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Meng, Xiang [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Suzuki, Hiroaki [Graduate School of Engineering, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Itahara, Hiroshi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Tatsuoka, Hirokazu, E-mail: tatsuoka.hirokazu@shizuoka.ac.jp [Graduate School of Integrated Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan)

    2016-08-15

    Graphical abstract: Si nanosheets connected to Si nanowires synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst avoid the use of air-sensitive SiH{sub 4} or SiCl{sub 4}. It was evident from these structural features of the nanosheets (leaf blade) with nanowires (petiole) that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes of the Si(111) nanosheets was clearly explained by the interference with the extra diffraction spots that arose due to the reciprocal lattice streaking effect. - Highlights: • New Si nanosheets connected to Si nanowires were synthesized using MnCl{sub 2}/Si powders. • The synthesis method has benefits in terms of avoiding air sensitive SiH{sub 4} or SiCl{sub 4}. • Structural property and electron diffraction of the Si nanosheets were clarified. • Odd lattice fringes of the Si nanosheets observed by HRTEM were clearly explained. - Abstract: Si nanosheets connected to Si nanowires were synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst. The synthesis method has benefits in terms of avoiding conventionally used air-sensitive SiH{sub 4} or SiCl{sub 4}. The existence of the Si nanosheets connected to the Si<111> nanowires, like sprouts or leaves with petioles, was observed, and the surface of the nanosheets was Si{111}. The nanosheets were grown in the growth direction of <211> perpendicular to that of the Si nanowires. It was evident from these structural features of the nanosheets that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes, which do not appear for Si bulk crystals, of the Si(111) nanosheets obtained by high resolution transmission electron microscopy was clearly explained due to the extra diffraction spots that arose by the reciprocal lattice streaking effect.

  3. Deliverable D4.5. Failure Mode and Effect Analysis for 100% waste concrete. SUS-CON

    NARCIS (Netherlands)

    Visser, J.H.M.

    2014-01-01

    On January 1st 2012, the European project SUS-CON has been started: “SUStainable, innovative and energy efficient CONcrete, based on the integration of all waste materials” (grant agreement no: 285463). The SUS-CON project aims at developing new technology routes to integrate waste materials in the

  4. Caratterizzazione genetica di alcune popolazioni di cinghiale (Sus scrofa dell'Italia meridionale

    Directory of Open Access Journals (Sweden)

    M.F. Caliendo

    2003-10-01

    Full Text Available In Italia il Cinghiale ha subito varie oscillazioni numeriche per immissioni d?esemplari provenienti soprattutto dall'est europeo o da paesi vicini (Massei & Toso, 1993 e incrocio con esemplari di maiale domestico, allevato allo stato brado o semi brado in molte zone d'Italia (Apollonio et al., 1988. Questi fattori sono stati responsabili anche di un impoverimento genetico della forma autoctona italiana Sus scrofa meridionalis e majori che sembrano persistere solo in Sardegna e Maremma (Apollonio et al., 1988. Tra le riserve in cui si ritiene possano trovarsi popolazioni ancora integre, figura la tenuta presidenziale di Castelporziano (Roma. Prendendo spunto da questo lavoro, con il nostro contributo riportiamo i risultati, a livello genetico, della ibridazione con il maiale da parte di cinghiali della Campania, basato sul DNA microsatellite di 4 loci polimorfi. Sono state studiate 9 popolazioni (allevate e libere, usando per riferimenti maiali allo stato brado e cinghiali di Castelporziano. Dall?analisi delle frequenze alleliche è stato eseguito il test di assignment (implementato in una sub routine del software Arlequin 2.0 che individua la possibile origine di un individuo, rispetto ad una rosa di probabili popolazioni di riferimento (Paetkau et al., 1998. Con i risultati del test di assignment si è costruito il grafico log-log genotype, rappresentato da un piano individuato dalle due variabili di riferimento (cinghiale e maiale brado. Le popolazioni esaminate evidenziano una generalizzata distribuzione a cavallo tra i due riferimenti con individui geneticamente simili al cinghiale ed altri al maiale. Questa ripartizione simmetrica è molto evidente nel caso dei cinghiali catturati a Punta Licosa e in quelli dell?allevamento di Polla. La distribuzione dei genotipi sul piano è spesso dispersa, ad eccezione dei cinghiali della Valle del Vento e quelli di Monteverde (individui

  5. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process.

    Science.gov (United States)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-25

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  6. Formation, structure, and phonon confinement effect of nanocrystalline Si1-xGex in SiO2-Si-Ge cosputtered films

    International Nuclear Information System (INIS)

    Yang, Y.M.; Wu, X.L.; Siu, G.G.; Huang, G.S.; Shen, J.C.; Hu, D.S.

    2004-01-01

    Using magnetron cosputtering of SiO 2 , Ge, and Si targets, Si-based SiO 2 :Ge:Si films were fabricated for exploring the influence of Si target proportion (P Si ) and annealing temperature (Ta) on formation, local structure, and phonon properties of nanocrystalline Si 1-x Ge x (nc-Si 1-x Ge x ). At low P Si and Ta higher than 800 deg. C, no nc-Si 1-x Ge x but a kind of composite nanocrystal consisting of a Ge core, GeSi shell, and amorphous Si outer shell is formed in the SiO 2 matrix. At moderate P Si , nc-Si 1-x Ge x begins to be formed at Ta=800 deg. C and coexists with nc-Ge at Ta=1100 deg. C. At high P Si , it was disclosed that both optical phonon frequency and lattice spacing of nc-Si 1-x Ge x increase with raising Ta. The possible origin of this phenomenon is discussed by considering three factors, the phonon confinement, strain effect, and composition variation of nc-Si 1-x Ge x . This work will be helpful in understanding the growth process of ternary GeSiO films and beneficial to further investigations on optical properties of nc-Ge 1-x Si x in the ternary matrix

  7. Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

    Science.gov (United States)

    Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

    2016-03-01

    Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 - 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 - 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy

  8. Experimental and thermodynamic assessments of substitutions in the AlFeSi, FeMnSi, FeSiZr and AlCaFeSi systems (65 wt % Si) - solidification simulation

    International Nuclear Information System (INIS)

    Gueneau, C.; Ansara, I.

    1994-01-01

    The substitutions of Al Si, Fe Mn and Fe Zr in some intermetallic compounds of the Al-Fe-Si, Fe-Mn-Si and Fe-Si-Zr systems are modelled in the Si-rich corner using a two sublattice model. The solidification paths of the studied alloys are determined at equilibrium. The ascalculated phase volume fractions of the alloys are compared to the experimental ones. Finally, a solidification simulation using the Gulliver-Scheil's model is performed in order to explain the formation of some precipitates experimentally observed. (authors). 14 figs., 19 refs

  9. Ultrathin SiO{sub 2} layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO{sub 2}/Si interface for crystalline Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, Taketoshi; Nakajima, Hiroki; Irishika, Daichi; Nonaka, Takaaki; Imamura, Kentaro; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

    2017-02-15

    Highlights: • The density of interface states at the SiO{sub 2}/Si interface is decreased by NAOS. • The minority carrier lifetime is increased by the NAOS treatment. • Great interfacial properties of the NAOS layer are kept after thermal oxidation. - Abstract: A combination of the nitric acid oxidation of Si (NAOS) method and post-thermal oxidation is found to efficiently passivate the SiO{sub 2}/n-Si(100) interface. Thermal oxidation at 925 °C and annealing at 450 °C in pure hydrogen atmosphere increases the minority carrier lifetime by three orders of magnitude, and it is attributed to elimination of Si dangling bond interface states. Fabrication of an ultrathin, i.e., 1.1 nm, NAOS SiO{sub 2} layer before thermal oxidation and H{sub 2} annealing further increases the minority carrier lifetime by 30% from 8.6 to 11.1 ms, and decreased the interface state density by 10% from 6.9 × 10{sup 9} to 6.3 × 10{sup 9}eV{sup −1} cm{sup −2}. After thermal oxidation at 800 °C, the SiO{sub 2} layer on the NAOS-SiO{sub 2}/Si(100) structure is 2.26 nm thick, i.e., 0.24 nm thicker than that on the Si(100) surface, while after thermal oxidation at 925 °C, it is 4.2 nm thick, i.e., 0.4 nm thinner than that on Si(100). The chemical stability results from the higher atomic density of a NAOS SiO{sub 2} layer than that of a thermal oxide layer as reported in Ref. [28] (Asuha et al., 2002). Higher minority carrier lifetime in the presence of the NAOS layer indicates that the NAOS-SiO{sub 2}/Si interface with a low interface state density is preserved after thermal oxidation, which supports out-diffusion oxidation mechanism, by which a thermal oxide layer is formed on the NAOS SiO{sub 2} layer.

  10. Weldability of dissimilar joint between F82H and SUS316L under fiber laser welding

    Energy Technology Data Exchange (ETDEWEB)

    Serizawa, Hisashi [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Mori, Daiki; Shirai, Yuma; Ogiwara, Hiroyuki; Mori, Hiroaki [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2013-10-15

    Highlights: • The microstructure of F82H/SUS316L dissimilar joint can be divided into four regions. • In the case without beam position shift, hardness of WM cannot be reduced by PWHT. • The fiber laser welding would be applicable for constructing the dissimilar joint. -- Abstract: As one of the high beam quality heat sources, 4 kW fiber laser was applied for joining between reduced activation ferritic/martensitic steel, F82H and SUS316L austenitic stainless steel, and the microstructural analyses and Vickers hardness measurements were carried out before and after post-weld heat treatment (PWHT). The microstructure of joint can be divided into four regions which are base metal of F82H, heat affected zone (HAZ) in F82H, weld metal (WM) and base metal of SUS316L. Also, it is revealed that the high-power fiber laser can be employed for constructing butt joint between F82H and SUS316L by applying PWHT and shifting the laser beam position to SUS316L, where the distance between the contact face and beam should be set as a range from radius to diameter of laser beam.

  11. Weldability of dissimilar joint between F82H and SUS316L under fiber laser welding

    International Nuclear Information System (INIS)

    Serizawa, Hisashi; Mori, Daiki; Shirai, Yuma; Ogiwara, Hiroyuki; Mori, Hiroaki

    2013-01-01

    Highlights: • The microstructure of F82H/SUS316L dissimilar joint can be divided into four regions. • In the case without beam position shift, hardness of WM cannot be reduced by PWHT. • The fiber laser welding would be applicable for constructing the dissimilar joint. -- Abstract: As one of the high beam quality heat sources, 4 kW fiber laser was applied for joining between reduced activation ferritic/martensitic steel, F82H and SUS316L austenitic stainless steel, and the microstructural analyses and Vickers hardness measurements were carried out before and after post-weld heat treatment (PWHT). The microstructure of joint can be divided into four regions which are base metal of F82H, heat affected zone (HAZ) in F82H, weld metal (WM) and base metal of SUS316L. Also, it is revealed that the high-power fiber laser can be employed for constructing butt joint between F82H and SUS316L by applying PWHT and shifting the laser beam position to SUS316L, where the distance between the contact face and beam should be set as a range from radius to diameter of laser beam

  12. Jogo (indica-sus: estratégia lúdica na aprendizagem sobre o sistema único de saude

    Directory of Open Access Journals (Sweden)

    Maria Raquel Gomes Maia Pires

    2013-01-01

    Full Text Available Es cuestionable que tecnología lúdico-educativa en el aprendizaje acerca de SUS favorece la imaginación, relajación, espontaneidad y reflexión en la formación de los profesionales de la salud. Los objetivos fueram desarrollar el juego (INDICA-SUS centrado en diálogo sobre políticas de salud con los juguetones; analizar componentes de relajación, placer, aspectos formativos, emociones y tácticas del desarrollo del (INDICA-SUS; identificar las variables indicativas de lo lúdico en tecnologías educativas para la salud. Enfoque exploratorio, descriptivo, cuantitativo y cualitativo, estudio de caso. Las pruebas se realizaron con partidas testes de 180 participantes, cuestionarios, observación participante, análisis de contenido y prueba estadística de Pearson. Las variables indicativas de ludicidad de tecnologías de educación para la salud incluyen placer y tensión en el juego. El (INDICA-SUS integra carácter inventivo, imaginativo e de intercambio como potencial para la formación; contemplase aprendizaje múltiple y el enseño del SUS, a partir de él.

  13. Comparison of interfaces for (Ba,Sr)TiO3 films deposited on Si and SiO2/Si substrates

    International Nuclear Information System (INIS)

    Suvorova, N.A.; Lopez, C.M.; Irene, E.A.; Suvorova, A.A.; Saunders, M.

    2004-01-01

    (Ba,Sr)TiO 3 (BST) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO 2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO 2 on Si or 3.5 nm SiO 2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO 2 . Using the conductance method, capacitance-voltage measurements show a decrease in the interface trap density D it of an order of magnitude for oxidized Si substrates with a thicker SiO 2 underlayer. Further reduction of D it was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization

  14. Comparison of interfaces for (Ba,Sr)TiO3 films deposited on Si and SiO2/Si substrates

    Science.gov (United States)

    Suvorova, N. A.; Lopez, C. M.; Irene, E. A.; Suvorova, A. A.; Saunders, M.

    2004-03-01

    (Ba,Sr)TiO3(BST) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO2 on Si or 3.5 nm SiO2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. Using the conductance method, capacitance-voltage measurements show a decrease in the interface trap density Dit of an order of magnitude for oxidized Si substrates with a thicker SiO2 underlayer. Further reduction of Dit was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization.

  15. Jorge Santayana y sus vínculos humanos en Avila. Breve recopilación epistolar

    Directory of Open Access Journals (Sweden)

    Pedro GARCÍA MARTÍN

    2009-11-01

    Full Text Available Es, hasta cierto punto, conocida la vinculación abulense de Santayana. Se sabe que aquí pasó su infancia a partir de los dos años; se conocen también, en etapas posteriores, sus frecuentes escapadas veraniegas para ver a su padre primero y a sus hermanas después, especialmente a su hermana Susana que aquí casó y proporcionó finalmente al filósofo una verdadera familia hasta el final de sus días. Poco se ha profundizado, sin embargo, sobre el alcance real de esta influyente vinculación y sobre la cualidad particular de este sustrato abulense.

  16. Mechanical behavior of SiCf/SiC composites with alternating PyC/SiC multilayer interphases

    International Nuclear Information System (INIS)

    Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

    2013-01-01

    Highlights: ► Superior combination of flexural strength and fracture toughness of the 3D SiC/SiC composite was achieved by interface tailoring. ► Resulted composite possesses a much higher flexural strength and fracture toughness than its counterparts in literatures. ► Mechanisms that PyC/SiC multilayer coatings improve the mechanical properties were illustrated. -- Abstract: In order to tailor the fiber–matrix interface of continuous silicon carbide fiber reinforced silicon carbide (SiC f /SiC) composites for improved fracture toughness, alternating pyrolytic carbon/silicon carbide (PyC/SiC) multilayer coatings were applied to the KD-I SiC fibers using chemical vapor deposition (CVD) method. Three dimensional (3D) KD-I SiC f /SiC composites reinforced by these coated fibers were fabricated using a precursor infiltration and pyrolysis (PIP) process. The interfacial characteristics were determined by the fiber push-out test and microstructural examination using scanning electron microscopy (SEM). The effect of interface coatings on composite mechanical properties was evaluated by single-edge notched beam (SENB) test and three-point bending test. The results indicate that the PyC/SiC multilayer coatings led to an optimum interfacial bonding between fibers and matrix and greatly improved the fracture toughness of the composites.

  17. Oscillations in the fusion of the Si + Si systems

    International Nuclear Information System (INIS)

    Aguilera R, E.F.; Kolata, J.J.; DeYoung, P.A.; Vega, J.J.

    1986-02-01

    Excitation functions for the yields of all the residual nuclei from the 28 Si + 28,30 and 30 Si + 30 Si reactions have been measured via the γ-ray technique for center of mass energies in the region within one and two times the Coulomb barrier.Thirteen elements were identified for the first reaction and ten for the other two. While no structure is shown by the data for the 28 + 28 Si reaction, we have found evidence for intermediate width structure in the 2α and the αpn channels in 28 Si + 30 Si and for broad structure in the total fusion cross sections for 30 Si + 30 Si. Calculations using a barrier penetration model with one free parameter reproduce the experimental results quite well. Evaporation model calculations indicate that the individual structure of the nuclei involved in the respective decay chains might have an important influence upon the deexcitation process at the energies relevant to our experiments. (Author)

  18. Development of nanostructured SUS316L-2%TiC with superior tensile properties

    Energy Technology Data Exchange (ETDEWEB)

    Sakamoto, T., E-mail: sakamoto.tatsuaki.mm@ehime-u.ac.jp [Department of Materials Science and Biotechnology, Ehime University, Matsuyama 790-8577 (Japan); Kurishita, H.; Matsuo, S.; Arakawa, H. [International Research Center for Nuclear Materials Science, IMR, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Takahashi, S.; Tsuchida, M. [Ehime University, Matsuyama 790-8577 (Japan); Kobayashi, S.; Nakai, K. [Department of Materials Science and Biotechnology, Ehime University, Matsuyama 790-8577 (Japan); Terasawa, M. [Laboratory of Advanced Science & Technology for Industry, University of Hyogo, 3-1-2 Koto, Kamigori-cho, Hyogo 678-1205 (Japan); Yamasaki, T. [Department of Materials Science & Chemistry, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2201 (Japan); Kawai, M. [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki-ken 305-0801 (Japan)

    2015-11-15

    Structural materials used in radiation environments require radiation tolerance and sufficient mechanical properties in the controlled state. In order to offer SUS316L austenitic stainless steel with the assumed requirements, nanostructured SUS316L with TiC addition of 2% (SUS316L-2TiC) that is capable of exhibiting enhanced tensile ductility and flow strength sufficient for structural applications was fabricated by advanced powder metallurgical methods. The methods include MA (Mechanical Alloying), HIP (Hot Isostatic Pressing), GSMM (Grain boundary Sliding Microstructural Modification) for ductility enhancement, cold rolling at temperatures below M{sub d} (the temperature where the martensite phase occurs by plastic deformation) for phase transformation from austenite to martensite and heat treatment for reverse transformation from martensite to austenite. It is shown that the developed SUS316L-2TiC exhibits ultrafine grains with sizes of 90–270 nm, accompanied by TiC precipitates with 20–50 nm in grain interior and 70–110 nm at grain boundaries, yield strengths of 1850 to 900 MPa, tensile strengths of 1920 to 1100 MPa and uniform elongations of 0.6–21%, respectively, depending on the heat treatment temperature after rolling at −196 °C. - Highlights: • Nanostructured SUS316L-2%TiC exhibiting sufficient tensile ductility and strength is developed. • The development requires an advanced powder metallurgical route. • The route includes MA, HIP, GSMM and thermo-mechanical treatments for phase transformation. • The austenite grain sizes are 90–270 nm and TiC precipitates 20–50 nm in grain interior. • The tensile strength are 1100–1920 MPa and uniform elongation 0.6–21%.

  19. Development of nanostructured SUS316L-2%TiC with superior tensile properties

    International Nuclear Information System (INIS)

    Sakamoto, T.; Kurishita, H.; Matsuo, S.; Arakawa, H.; Takahashi, S.; Tsuchida, M.; Kobayashi, S.; Nakai, K.; Terasawa, M.; Yamasaki, T.; Kawai, M.

    2015-01-01

    Structural materials used in radiation environments require radiation tolerance and sufficient mechanical properties in the controlled state. In order to offer SUS316L austenitic stainless steel with the assumed requirements, nanostructured SUS316L with TiC addition of 2% (SUS316L-2TiC) that is capable of exhibiting enhanced tensile ductility and flow strength sufficient for structural applications was fabricated by advanced powder metallurgical methods. The methods include MA (Mechanical Alloying), HIP (Hot Isostatic Pressing), GSMM (Grain boundary Sliding Microstructural Modification) for ductility enhancement, cold rolling at temperatures below M_d (the temperature where the martensite phase occurs by plastic deformation) for phase transformation from austenite to martensite and heat treatment for reverse transformation from martensite to austenite. It is shown that the developed SUS316L-2TiC exhibits ultrafine grains with sizes of 90–270 nm, accompanied by TiC precipitates with 20–50 nm in grain interior and 70–110 nm at grain boundaries, yield strengths of 1850 to 900 MPa, tensile strengths of 1920 to 1100 MPa and uniform elongations of 0.6–21%, respectively, depending on the heat treatment temperature after rolling at −196 °C. - Highlights: • Nanostructured SUS316L-2%TiC exhibiting sufficient tensile ductility and strength is developed. • The development requires an advanced powder metallurgical route. • The route includes MA, HIP, GSMM and thermo-mechanical treatments for phase transformation. • The austenite grain sizes are 90–270 nm and TiC precipitates 20–50 nm in grain interior. • The tensile strength are 1100–1920 MPa and uniform elongation 0.6–21%.

  20. Healthcare regions and their care networks: an organizational-systemic model for SUS.

    Science.gov (United States)

    Santos, Lenir

    2017-04-01

    This paper describes a comprehensive effort to develop studies regarding Brazil's Unified Healthcare System (SUS), as a result of the combination of public services in a network that follows a region-based rationale (tripartite organization). The SUS emerges from such an integration and should be organized as such. The intention is to demonstrate that this type of organization is essential, given that Brazil is organized as a Federation, and all three governmental levels are, in a broad sense, equally responsible for healthcare. Healthcare services and actions are a complex set of activities that are interconnected on behalf of citizen health, which is a global concept that cannot be split up. Services must follow this rationale and be organized as such. Thus, healthcare services must be systematically organized to serve everyone equally, regardless of where a citizen lives. This systemic organization requires permanent interaction between federative units to discuss and operationalize reference services, funding and other technical and administrative aspects. These are the essential elements that make the SUS so complex and demand it be organized regionally, as a network of healthcare services.

  1. Structure of MnSi on SiC(0001)

    Science.gov (United States)

    Meynell, S. A.; Spitzig, A.; Edwards, B.; Robertson, M. D.; Kalliecharan, D.; Kreplak, L.; Monchesky, T. L.

    2016-11-01

    We report on the growth and magnetoresistance of MnSi films grown on SiC(0001) by molecular beam epitaxy. The growth resulted in a textured MnSi(111) film with a predominantly [1 1 ¯0 ] MnSi (111 )∥[11 2 ¯0 ] SiC(0001) epitaxial relationship, as demonstrated by transmission electron microscopy, reflection high energy electron diffraction, and atomic force microscopy. The 500 ∘C temperature required to crystallize the film leads to a dewetting of the MnSi layer. Although the sign of the lattice mismatch suggested the films would be under compressive stress, the films acquire an in-plane tensile strain likely driven by the difference in thermal expansion coefficients between the film and substrate during annealing. As a result, the magnetoresistive response demonstrates that the films possess a hard-axis out-of-plane magnetocrystalline anisotropy.

  2. Mitochondrial genome of Taiwan pig ( Sus Scrofa ) | Chen | African ...

    African Journals Online (AJOL)

    The purpose of this study is to investigate the complete nucleotide sequence of the mitochondrial genome of the Taiwan Lanyu pig (Sus scrofa) and its phylogenetic relationships with other pig breeds. Thirty-four forward and reverse primers were designed. Sequencing was performed in both directions. The results showed ...

  3. ENFOQUE MULTIMODAL PARA MEJORAR LA CALIDAD DE VIDA

    Directory of Open Access Journals (Sweden)

    Gerardo Godoy Echiburú

    2015-01-01

    Full Text Available En el ámbito pedagógico, los aportes de la Semiótica Social, la Lingüística Sistémico Funcional y la Multimodalidad se presentan como herramientas teórico-metodológicas para analizar las interacciones comunicativas en contexto escolar. Dentro de la diversidad de experiencias y modos de comunicación que se presentan en la escuela existen unos muy particulares, el de las personas del espectro autista. Este estudio aborda la comunicación en la escuela desde el paradigma de la educación inclusiva y tiene como objetivo describir los recursos semióticos utilizados por un joven del espectro autista de una escuela especial de la comuna de Viña del Mar, Chile. Para esto se realiza un estudio de caso en el cual se registra de manera audiovisual la interacción escolar en un momento del día, durante cuatro semanas continuas. Para el análisis multimodal, se consideran las nociones de campo, tenor y modo junto con el intercambio de significados (metafunción interpersonal, enfocándose principalmente en el recurso “tirarse al suelo”, siendo éste el más frecuente y cuyas funciones se presentan mayormente diferenciadas. Se identifican los recursos empleados para las dos opciones básicas del intercambio: oferta y/o demanda, ya sea de bienes y servicios o información, en los cuales el joven hace un uso consistente en diversos contextos escolares. Entre las proyecciones destaca que, a partir de la interpretación de sus interacciones, se puede mejorar la Calidad de Vida del estudiante propiciando un clima de aula favorable para el aprendizaje, validando sus interacciones no como conductas disruptivas si no como recursos comunicativos reconocidos por su entorno inmediato.

  4. Recursos comunicativos de un joven con autismo: enfoque multimodal para mejorar la calidad de la vida

    Directory of Open Access Journals (Sweden)

    Echiburú Godoy, Gerardo

    2015-04-01

    Full Text Available En el ámbito pedagógico, los aportes de la Semiótica Social, la Lingüística Sistémico Funcional y la Multimodalidad se presentan como herramientas teórico-metodológicas para analizar las interacciones comunicativas en contexto escolar. Dentro de la diversidad de experiencias y modos de comunicación que se presentan en la escuela existen unos muy particulares, el de las personas del espectro autista. Este estudio aborda la comunicación en la escuela desde el paradigma de la educación inclusiva y tiene como objetivo describir los recursos semióticos utilizados por un joven del espectro autista de una escuela especial de la comuna de Viña del Mar, Chile. Para esto se realiza un estudio de caso en el cual se registra de manera audiovisual la interacción escolar en un momento del día, durante cuatro semanas continuas. Para el análisis multimodal, se consideran las nociones de campo, tenor y modo junto con el intercambio de significados (metafunción interpersonal, enfocándose principalmente en el recurso “tirarse al suelo”, siendo éste el más frecuente y cuyas funciones se presentan mayormente diferenciadas. Se identifican los recursos empleados para las dos opciones básicas del intercambio: oferta y/o demanda, ya sea de bienes y servicios o información, en los cuales el joven hace un uso consistente en diversos contextos escolares. Entre las proyecciones destaca que, a partir de la interpretación de sus interacciones, se puede mejorar la Calidad de Vida del estudiante propiciando un clima de aula favorable para el aprendizaje, validando sus interacciones no como conductas disruptivas si no como recursos comunicativos reconocidos por su entorno inmediato

  5. Comportamiento a tracción a temperaturas ambiente y elevadas de nuevos composites basados en aleaciones hipereutécticas de Al-Si

    Directory of Open Access Journals (Sweden)

    Valer, J.

    1997-02-01

    Full Text Available This work shows the improvement obtained on tensile stress at room and high temperatures of hypereutectic Al-Si alloys. These alloys are produced by a combination of spray-forming, extrusión and thixoforming process, in comparison with conventional casting alloys. Al-25%Si-5%Cu, Al- 25%Si-5%Cu-2%Mg and Al-30%Si-5%Cu alloys have been studied relating their microstructural parameters with tensile stress obtained and comparing them with conventional Al-20%Si, Al-36%Si and Al-50%Si alloys. Al-25%Si-5%Cu alloy was tested before and after semi-solid forming, in order to distinguish the different behaviour of this alloy due to the different microstructure. The properties obtained with these alloys were also related to Al-SiC composites formed by similar processes.

    En este trabajo se muestra la mejora obtenida en la resistencia a la tracción a temperatura ambiente y a elevadas temperaturas de aleaciones hipereutécticas de Al-Si producidas por una combinación de un proceso de solidificación rápida y del conformado en estado semisólido, en comparación con aleaciones obtenidas por procedimientos convencionales de inyección en estado líquido. Se han estudiado las aleaciones Al-25%Si-5%Cu, Al-25%Si-5%Cu-2%Mg y Al-30%Si-5%Cu, relacionando sus parámetros microestructurales con las resistencias a tracción obtenidas, y se han comparado con las aleaciones binarias Al-20%Si, Al-36%Si y Al-50%Si. La aleación Al-25%Si-5%Cu se ha ensayado antes y después del conformado en estado semisólido, lo que ha permitido conocer la diferencia en el comportamiento de la aleación como consecuencia de la distinta microestructura. También se comparan las propiedades obtenidas en estas aleaciones con las que presentan composites de aleaciones de aluminio reforzados con partículas de SiC y procesados por métodos similares.

  6. Laser-controlled stress of Si nanocrystals in a free-standing Si /SiO2 superlattice

    Science.gov (United States)

    Khriachtchev, Leonid; Räsänen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar+ laser radiation melts Si nanocrystals in a free-standing Si /SiO2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means.

  7. Laser-controlled stress of Si nanocrystals in a free-standing Si/SiO2 superlattice

    International Nuclear Information System (INIS)

    Khriachtchev, Leonid; Raesaenen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar + laser radiation melts Si nanocrystals in a free-standing Si/SiO 2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3 GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means

  8. Isotopic effects in sub-barrier fusion of Si + Si systems

    Science.gov (United States)

    Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Esbensen, H.; Bourgin, D.; Čolović, P.; Corradi, L.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Grebosz, J.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Szilner, S.; Urbani, M.; Zhang, G. L.

    2018-04-01

    Background: Recent measurements of fusion cross sections for the 28Si+28Si system revealed a rather unsystematic behavior; i.e., they drop faster near the barrier than at lower energies. This was tentatively attributed to the large oblate deformation of 28Si because coupled-channels (CC) calculations largely underestimate the 28Si+28Si cross sections at low energies, unless a weak imaginary potential is applied, probably simulating the deformation. 30Si has no permanent deformation and its low-energy excitations are of a vibrational nature. Previous measurements of this system reached only 4 mb, which is not sufficient to obtain information on effects that should show up at lower energies. Purpose: The aim of the present experiment was twofold: (i) to clarify the underlying fusion dynamics by measuring the symmetric case 30Si+30Si in an energy range from around the Coulomb barrier to deep sub-barrier energies, and (ii) to compare the results with the behavior of 28Si+28Si involving two deformed nuclei. Methods: 30Si beams from the XTU tandem accelerator of the Laboratori Nazionali di Legnaro of the Istituto Nazionale di Fisica Nucleare were used, bombarding thin metallic 30Si targets (50 μ g /cm2) enriched to 99.64 % in mass 30. An electrostatic beam deflector allowed the detection of fusion evaporation residues (ERs) at very forward angles, and angular distributions of ERs were measured. Results: The excitation function of 30Si+30Si was measured down to the level of a few microbarns. It has a regular shape, at variance with the unusual trend of 28Si+28Si . The extracted logarithmic derivative does not reach the LCS limit at low energies, so that no maximum of the S factor shows up. CC calculations were performed including the low-lying 2+ and 3- excitations. Conclusions: Using a Woods-Saxon potential the experimental cross sections at low energies are overpredicted, and this is a clear sign of hindrance, while the calculations performed with a M3Y + repulsion

  9. Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

    International Nuclear Information System (INIS)

    Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

    2014-01-01

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm 2 /Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10 6 . With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress

  10. Synthesis and characterization of laminated Si/SiC composites

    Science.gov (United States)

    Naga, Salma M.; Kenawy, Sayed H.; Awaad, Mohamed; Abd El-Wahab, Hamada S.; Greil, Peter; Abadir, Magdi F.

    2012-01-01

    Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results. PMID:25685404

  11. Synthesis and characterization of laminated Si/SiC composites

    Directory of Open Access Journals (Sweden)

    Salma M. Naga

    2013-01-01

    Full Text Available Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results.

  12. Propagation of misfit dislocations from buffer/Si interface into Si

    Science.gov (United States)

    Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  13. Propósitos de la comunicación entre empresas y sus seguidores en Facebook

    Directory of Open Access Journals (Sweden)

    G Valerio Ureña

    2015-02-01

    Full Text Available Introducción: La investigación del comportamiento del consumidor en las redes sociales en línea está despertando un creciente interés entre la comunidad empresarial debido a las nuevas e inexploradas oportunidades y amenazas que trae consigo, incluyendo la vasta cantidad de datos generados día con día. El propósito de este estudio es explorar el uso de Facebook como fuente valiosa de información para identificar la naturaleza y el contenido de las conversaciones de las empresas de telecomunicaciones mexicanas y sus seguidores. Metodología: a través de una metodología cualitativa se analizaron 2,000 publicaciones (1000 realizadas por las empresas y 1,000 publicaciones realizadas por sus seguidores. Resultados y conclusiones: los resultados sugieren que las compañías de telecomunicaciones utilizan Facebook primordialmente para sus relaciones públicas, publicidad y promoción; mientras que sus usuarios las utilizan primordialmente para reportar incidentes y problemas, formular quejas y solucionar dudas.

  14. Tailoring of SiC nanoprecipitates formed in Si

    Energy Technology Data Exchange (ETDEWEB)

    Velisa, G., E-mail: gihan.velisa@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, 077125 Magurele (Romania); Trocellier, P. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Thomé, L. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Vaubaillon, S. [CEA, INSTN, UEPTN, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Miro, S.; Serruys, Y.; Bordas, É. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Meslin, E. [CEA, DEN, Service de Recherches de Métallurgie Physique, F-91191 Gif-sur-Yvette (France); Mylonas, S. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Coulon, P.E. [Ecole Polytechnique, Laboratoire des Solides Irradiés, CEA/DSM/IRAMIS-CNRS, 91128 Palaiseau Cedex (France); Leprêtre, F.; Pilz, A.; Beck, L. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

    2013-07-15

    The SiC synthesis through single-beam of C{sup +}, and simultaneous-dual-beam of C{sup +} and Si{sup +} ion implantations into a Si substrate heated at 550 °C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C{sup +} and 890-keV Si{sup +}) and single-beam (520-keV C{sup +}) ion implantations. Their shape appear as spherical (average size ∼4–5 nm) and they are in epitaxial relationship with the silicon matrix.

  15. Material test data of SUS304 welded joints

    Energy Technology Data Exchange (ETDEWEB)

    Asayama, Tai [Japan Nuclear Cycle Development Inst., Oarai, Ibaraki (Japan). Oarai Engineering Center; Kawakami, Tomohiro [Nuclear Energy System Incorporation, Tokyo (Japan)

    1999-10-01

    This report summarizes the material test data of SUS304 welded joints. Numbers of the data are as follows: Tensile tests 71 (Post-irradiation: 39, Others: 32), Creep tests 77 (Post-irradiation: 20, Others: 57), Fatigue tests 50 (Post-irradiation: 0), Creep-fatigue tests 14 (Post-irradiation: 0). This report consists of the printouts from 'the structural material data processing system'. (author)

  16. Inmigrantes andinos en Madrid: Sus danzas y sus músicas tradicionales

    Directory of Open Access Journals (Sweden)

    Lourdes Morales

    2007-01-01

    Full Text Available In our urban context we get in touch with people that have been forced to leave their countries under different circumstances in order to live in Spain. This article analyses their wish to maintain a group identity and how this identity is materialized by some individuals through traditional dance and music. The study is intended as a framework for subsequent educational investigations that relate that cultural reality with the situation in secondary schools where children of Latin American immigrants study.Nuestro entorno ciudadano inmediato nos pone en contacto diario con personas que por diferentes razones se han visto obligadas a dejar sus países de origen para instalarse en España. Este artículo analiza el deseo que surge en ellas de mantener una identidad de grupo, y cómo ésta se concreta en ciertos individuos mediante manifestaciones de danza y música popular tradicional. El estudio pretende servir de marco para ulteriores investigaciones educativas que vinculen esa realidad cultural con la situación de institutos de enseñanza secundaria en los que estudian hijos de inmigrantes latinoamericanos.

  17. Uniform Si nano-dot fabrication using reconstructed structure of Si(110)

    Science.gov (United States)

    Yano, Masahiro; Uozumi, Yuki; Yasuda, Satoshi; Asaoka, Hidehito

    2018-06-01

    Si nano-dot (ND) formation on Si(110) is observed by means of a scanning tunneling microscope (STM). The initial Si-NDs are Si crystals that are continuous from the substrate and grow during the oxide layer desorption. The NDs fabricated on the flat surface of Si(110)-1 × 1 are surrounded by four types of facets with almost identical appearance probabilities. An increase in the size of the NDs increases the variety of its morphology. In contrast, most Si-NDs fabricated on straight-stepped surface of Si(110)-16 × 2 reconstructed structure are surrounded by only a single type of facet, namely the \\text{Si}(17,15,1)-2 × 1 plane. An appearance probability of the facet in which the base line is along the step of Si(110)-16 × 2 exceeds 75%. This finding provides a fabrication technique of uniformed structural Si-NDs by using the reconstructed structure of Si(110).

  18. Neutron tolerance of advanced SiC-fiber/CVI-SiC composites

    International Nuclear Information System (INIS)

    Katoh, Y.; Kohyama, A.; Snead, L.L.; Hinoki, T.; Hasegawa, A.

    2003-01-01

    Fusion blankets employing a silicon carbide (SiC) fiber-reinforced SiC matrix composite (SiC/SiC composite) as the structural material provide attractive features represented by high cycle efficiency and extremely low induced radioactivity. Recent advancement in processing and utilization techniques and application studies in ceramic gas turbine and advanced transportation systems, SiC/SiC composites are steadily getting matured as industrial materials. Reference SiC/SiC composites for fusion structural applications have been produced by a forced-flow chemical vapor infiltration (FCVI) method using conventional and advanced near-stoichiometric SiC fibers and extensively evaluated primarily in Japan-US collaborative JUPITER program. In this work, effect of neutron irradiation at elevated temperatures on mechanical property of these composites is characterized. Unlike in conventional SiC/SiC composites, practically no property degradation was identified in advanced composites with a thin carbon interphase by a neutron fluence level of approximately 8dpa at 800C. (author)

  19. High thermal conductivity SiC/SiC composites for fusion applications -- 2

    International Nuclear Information System (INIS)

    Kowbel, W.; Tsou, K.T.; Withers, J.C.; Youngblood, G.E.

    1998-01-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion Structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. An unirradiated SiC/SiC composite made with MER-developed CVR SiC fiber and a hybrid PIP/CVI SiC matrix exhibited room temperature transverse thermal conductivity of 45 W/mK. An unirradiated SiC/SiC composite made from C/C composite totally CVR-converted to a SiC/SiC composite exhibited transverse thermal conductivity values of 75 and 35 W/mK at 25 and 1000 C, respectively. Both types of SiC/SiC composites exhibited non-brittle failure in flexure testing

  20. Revisión del concepto de calidad del servicio y sus modelos de medición

    OpenAIRE

    Edison Jair Duque Oliva

    2005-01-01

    En este trabajo se revisan las diferentes conceptualizaciones sobre el servicio y los modelos más reconocidos para la evaluación de la percepción de la calidad del servicio aparecidos en los últimos años. Se ofrece una breve descripción de dichos modelos, sus características más significativas, sus objetivos y sus diferencias. Los estudios sobre la evolución histórica de la gestión, la calidad y el marketing de servicios, ya enfocados en la evaluación de la calidad del servicio, se agru...

  1. Passivation of defect states in Si and Si/SiO2 interface states by cyanide treatment: improvement of characteristics of pin-junction amorphous Si and crystalline Si-based metal-oxide-semiconductor junction solar cells

    International Nuclear Information System (INIS)

    Fujiwara, N.; Fujinaga, T.; Niinobe, D.; Maida, O.; Takahashi, M.; Kobayashi, H.

    2003-01-01

    Defect states in Si can be passivated by cyanide treatment which simply involves immersion of Si materials in KCN solutions, followed by rinse. When the cyanide treatment is applied to pin-junction amorphous Si [a-Si] solar cells, the initial conversion efficiency increases. When the crown-ether cyanide treatment using a KCN solution of xylene containing 18-crown-6 is performed on i-a-Si films, decreases in the photo- and dark current densities with the irradiation time are prevented. The cyanide treatment can also passivate interface states present at Si/SiO 2 interfaces, leading to an increase in the conversion efficiency of 2 / Si (100)> solar cells.. Si-CN bonds formed by the reaction of defect states with cyanide ions have a high bond energy of about 4.5 eV and hence heat treatment at 800 0 C does not rupture the bonds, making thermal stability of the cyanide treatment.. When the cyanide treatment is applied to ultrathin SiO 2 /Si structure, the leakage current density is markedly decreased (Authors)

  2. Enfoque de opciones reales para la valoración financiera de marcas Real Options Approach to Financial Valuation of Brands

    Directory of Open Access Journals (Sweden)

    Yessica González Londoño

    2012-12-01

    Full Text Available Los activos intangibles, especialmente las marcas, son parte fundamental del valor de mercado de las compañías, pues representan su ventaja competitiva; sin embargo, la Contabilidad y las Finanzas se enfrentan ante un reto difícil al momento de valorarlos. Los métodos de medición de intangibles en la literatura revisada se caracterizan por ser limitados y subjetivos, e incluso presentan algunos errores conceptuales, encontrándose su utilidad principal en el campo de la gestión. Este artículo propone una metodología para la valoración financiera de marcas a partir de una extensión de la aplicación de opciones reales compuestas de las patentes, aprovechando las similitudes en su construcción. Su aplicación se ilustra mediante la valoración de la marca de una compañía aseguradora.Intangible assets are an important component of the market value of a company, particularly in brands which represent the competitive advantage of the company; however, both Accounting and Finance face a great challenge when trying to value them. The methods which have been proposed by the literature appear to be subjective, limited, and based on some theoretical errors. Their use is mainly circumscribed to the management of intangibles. This paper proposes a methodology for the financial valuation of brands based on the application of a compound real option model to a patent valuation, acknowledging the similarities in their construction. Later, an application to an insurance company is presented.

  3. The dependence of the interface and shape on the constrained growth of nc-Si in a-SiN sub x /a-Si:H/a-SiN sub x structures

    CERN Document Server

    Zhang Li; Wang Li; Li Wei; Xu Jun; Huang Xin Fan; Chen Kun Ji

    2002-01-01

    Size-controlled nanocrystalline silicon (nc-Si) has been prepared from a-SiN sub x /a-Si:H/a-SiN sub x ('a' standing for amorphous) structures by thermal annealing. Transmission electron microscope analyses show that the lateral size of the nc-Si is controlled by the annealing conditions and the a-Si sublayer thickness. The deviation of the nc-Si grain size distribution decreases with the a-Si sublayer thickness, so thinner a-Si sublayers are favourable for obtaining uniform nc-Si grains. In the a-Si:H (10 nm) sample annealed at 1000 deg. C for 30 min, an obvious bi-modal size distribution of nc-Si grains appears, but no obvious bi-modal size distribution is found in other samples with thinner a-Si:H sublayers. On the basis of the experimental results, we discuss the process of transition from the sphere-like shape to the disc-like shape in the growth model of the nc-Si crystallization. The critical thickness of the a-Si sublayer for the constrained crystallization can be determined by the present model. More...

  4. Role of the mRNA export factor Sus1 in oxidative stress tolerance in Candida albicans.

    Science.gov (United States)

    Xiao, Chenpeng; Yu, Qilin; Zhang, Bing; Li, Jianrong; Zhang, Dan; Li, Mingchun

    2018-02-05

    In eukaryotes, the nuclear export of mRNAs is essential for gene expression. However, little is known about the role of mRNA nuclear export in the important fungal pathogen, Candida albicans. In this study, we identified C. albicans Sus1, a nucleus-localized protein that is required for mRNA export. Interestingly, the sus1Δ/Δ displayed hyper-sensitivity to extracellular oxidative stress, enhanced ROS accumulation and severe oxidative stress-related cell death. More strikingly, although the mutant exhibited normal activation of the expression of oxidative stress response (OSR) genes, it had attenuated activity of ROS scavenging system, which may be attributed to the defect in OSR mRNA export in this mutant. In addition, the virulence of the sus1Δ/Δ was seriously attenuated. Taken together, our findings provide evidence that the mRNA export factor Sus1 plays an important role in oxidative stress tolerance and pathogenesis. Copyright © 2018 Elsevier Inc. All rights reserved.

  5. Gas leak tightness of SiC/SiC composites at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hayasaka, Daisuke, E-mail: hayasaka@oasis.muroran-it.ac.jp [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Park, Joon-Soo. [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE-SiC/SiC has extremely densified microstructure compared with other SiC/SiC composite like CVI. • Excellent helium and hydrogen gas-leak tightness of SiC/SiC composites by DEMO-NITE method from prototype industrialization production line was presented. • The excellence against stainless steel and Zircaloy at elevated temperature, together with generic excellent properties of SiC will be inevitable for innovative blanket and divertors for DEMO- and power- fusion reactors. - Abstract: SiC/SiC composite materials are attractive candidates for high heat flux components and blanket of fusion reactor, mainly due to their high temperature properties, radiation damage tolerance and low induced radioactivity. One of the challenges for SiC/SiC application in fusion reactors is to satisfy sufficient gas leak tightness of hydrogen and helium isotopes. Although many efforts have been carried-out, SiC/SiC composites by conventional processes have not been successful to satisfy the requirements, except SiC/SiC composites by NITE-methods. Toward the early realization of SiC/SiC components into fusion reactor systems process development of NITE-process has been continued. Followed to the brief introduction of recently developed DEMO-NITE process, baseline properties and hydrogen and helium gas leak tightness is presented. SiC/SiC claddings with 10 mm in diameter and 1 mm in wall thickness are tested by gas leak tightness system developed. The leak tightness measurements are done room temperature to 400 °C. Excellent gas leak tightness equivalent or superior to Zircaloy claddings for light water fission reactors is confirmed. The excellent gas leak tightness suggests nearly perfect suppression of large gas leak path in DEMO-NITE SiC/SiC.

  6. Advanced Optoelectronic Devices based on Si Quantum Dots/Si Nanowires Hetero-structures

    International Nuclear Information System (INIS)

    Xu, J; Zhai, Y Y; Cao, Y Q; Chen, K J

    2017-01-01

    Si quantum dots are currently extensively studied since they can be used to develop many kinds of optoelectronic devices. In this report, we review the fabrication of Si quantum dots (Si QD) /Si nanowires (Si NWs) hetero-structures by deposition of Si QDs/SiO 2 or Si QDs/SiC multilayers on Si NWs arrays. The electroluminescence and photovoltaic devices based on the formed hetero-structures have been prepared and the improved performance is confirmed. It is also found that the surface recombination via the surface defects states on the Si NWs, especially the ones obtained by the long-time etching, may deteriorate the device properties though they exhibit the better anti-reflection characteristics. The possible surface passivation approaches are briefly discussed. (paper)

  7. Low-temperature magnetotransport in Si/SiGe heterostructures on 300 mm Si wafers

    Science.gov (United States)

    Scappucci, Giordano; Yeoh, L.; Sabbagh, D.; Sammak, A.; Boter, J.; Droulers, G.; Kalhor, N.; Brousse, D.; Veldhorst, M.; Vandersypen, L. M. K.; Thomas, N.; Roberts, J.; Pillarisetty, R.; Amin, P.; George, H. C.; Singh, K. J.; Clarke, J. S.

    Undoped Si/SiGe heterostructures are a promising material stack for the development of spin qubits in silicon. To deploy a qubit into high volume manufacturing in a quantum computer requires stringent control over substrate uniformity and quality. Electron mobility and valley splitting are two key electrical metrics of substrate quality relevant for qubits. Here we present low-temperature magnetotransport measurements of strained Si quantum wells with mobilities in excess of 100000 cm2/Vs fabricated on 300 mm wafers within the framework of advanced semiconductor manufacturing. These results are benchmarked against the results obtained in Si quantum wells deposited on 100 mm Si wafers in an academic research environment. To ensure rapid progress in quantum wells quality we have implemented fast feedback loops from materials growth, to heterostructure FET fabrication, and low temperature characterisation. On this topic we will present recent progress in developing a cryogenic platform for high-throughput magnetotransport measurements.

  8. Financiando o SUS: algumas questões para o debate Funding the Brazilian National Health Service (SUS: some issues for the debate

    Directory of Open Access Journals (Sweden)

    Ruben Araujo de Mattos

    2003-09-01

    Full Text Available Este debate discute questões relacionadas ao financiamento do Sistema Único de Saúde (SUS. Na primeira parte, Ruben de Mattos defende a criação de dispositivos para a elevação progressiva dos gastos públicos em saúde. Segundo o debatedor, o maior desafio do governo será viabilizar - e sustentar - um sistema que garanta, de fato, o acesso universal e igualitário. Mattos também destaca a importância dos repasses federais entre os níveis de governos, por vê-los como instrumentos capazes de reduzir as desigualdades entre as regiões e incentivar políticas que contribuam para a consolidação do SUS. Na segunda parte, Nilson do Rosário afirma que o ajuste fiscal da década de 1990, conseqüência da política de estabilização monetária, limitou a capacidade de financiamento governamental na atenção à saúde, gerando efeitos perversos devido à ampliação da desigualdade social. A seguir, explica como o setor saúde respondeu às exigências de ajuste macroeconômico nas despesas públicas através de estratégias substitutivas, contexto em que o Programa de Saúde da Família (PSF se expandiu rapidamente, tornando-se estratégico na agenda da ampliação da atenção ambulatorial básica do país.This work discusses some of the issues related to the funding of the Brazilian National Health Service (SUS. In the first part of the paper, Ruben de Mattos advocates the creation of devices to guarantee a progressive increase in the public health budget. In the debater's view, the greatest challenge facing the government is the development - and the maintenance - of a system that can de facto guarantee universal and equalitarian access. Mattos also emphasizes the importance of the federal government's transfers of funds to local governments since the latter are seen as instrumental in the attempts to reduce inequality between regions and to encourage policies that will contribute to the SUS' consolidation. In the second part, Nilson

  9. UN PRIVILEGIO PARA EL ESTADO DE MICHOACÁN: SUS PUEBLOS MÁGICOS

    Directory of Open Access Journals (Sweden)

    Horacio Mercado Vargas

    2013-06-01

    Full Text Available El Estado de Michoacán, que se ubica en la parte del extremo sur occidental de México, posee paisajes muy hermosos: de bosques, praderas y lagunas de gran belleza, montañas y volcanes que descienden hacia el mar. Es uno de los más ricos en recursos naturales. La Secretaría de Turismo, diversas entidades del gobierno federal y gobiernos estatales y municipales desarrollaron el Programa de Pueblos Mágicos, para darle un valor a ciertas poblaciones del país que tienen características culturales y que llaman la atención de los visitantes mexicanos y extranjeros. Michoacán es una entidad que por sus características culturales, se distingue del resto de las entidades, y por ello es el estado con mayor número de Pueblos Mágicos en todo el país. La belleza y cultura de Michoacán se puede constatar en sus Pueblos Mágicos, que siempre recordarán los visitantes. Sus formas, colores y tradiciones son expresiones de un pasado lleno de gloria que se manifiesta en el presente.

  10. Valoración de la conservación biológica en Tunja, Boyacá

    Directory of Open Access Journals (Sweden)

    Aracely Burgos

    2010-10-01

    Full Text Available La biodiversidad brinda servicios ecológicos, económicos y sociales, entre otros, aún así el común de la población ignora sus bondades y beneficios, aunque ella misma es la principal causa de su actual grado de amenaza y extinción. Boyacá es uno de los departamentos con mayor biodiversidad en Colombia y la conservación de las especies presentes en su territorio requiere de conocimiento y esfuerzos conjuntos por parte de sus habitantes. El presente estudio evalúa: la percepción de la ciudadanía frente a la importancia, el compromiso económico, las prioridades, las opciones y el grado de conocimiento, de 7 especies animales y vegetales presentes en la región, nativas y exóticas. Se realizaron 130 encuestas en diferentes zonas de la ciudad. Se encontró que la población tunjana: 1- le da gran importancia a todas las especies de gran tamaño, aunque no sean nativas, 2- estaría dispuesta a pagar por conservar las especies que considera muy importantes; 3- apoyaría el desarrollo de proyectos de producción agropecuaria y generación hidroeléctrica, aun cuando esto signifique la extinción de las especies; 4- opina que las mejores opciones de protección son: aportes internacionales y fondos provenientes del estado y, 5- desconoce las causas y los problemas de conservación de variedades nativas. Hacer efectiva la protección de la biodiversidad en Boyacá requiere, por una parte, un mayor conocimiento biológico y por otra, elaborar políticas y estrategias que tomen en cuenta la opinión del público, por ser ellos quienes realizan la actividad de “conservar”.

  11. Si-to-Si wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Reus, Roger De; Lindahl, M.

    1997-01-01

    Anodic bonding of Si to Si four inch wafers using evaporated glass was performed in air at temperatures ranging from 300°C to 450°C. Although annealing of Si/glass structures around 340°C for 15 minutes eliminates stress, the bonded wafer pairs exhibit compressive stress. Pull testing revealed...

  12. Las comunidades y sus revistas científicas

    Directory of Open Access Journals (Sweden)

    Leonardo Romero

    2014-03-01

    Full Text Available Las investigaciones realizadas y expuestas ante las sociedades científicas, tuvieron en las revistas científicas un medio ex professode comunicación y diseminación de sus memorias y descubrimientos. Sin embargo en el escenario actual los investigadores y las revistas científicas adoptan nuevas características y se ven influenciadas por diferentes tendencias que requieren una estrategia de desarrollo editorial adecuada.

  13. Centrifugally cast Zn-27Al-xMg-ySi alloys and their in situ (Mg2Si + Si)/ZA27 composites

    International Nuclear Information System (INIS)

    Wang Qudong; Chen Yongjun; Chen Wenzhou; Wei Yinhong; Zhai Chunquan; Ding Wenjiang

    2005-01-01

    Effects of composition, mold temperature, rotating rate and modification on microstructure of centrifugally cast Zn-27Al-xMg-ySi alloys have been investigated. In situ composites of Zn-27Al-6.3Mg-3.7Si and Zn-27Al-9.8Mg-5.2Si alloys were fabricated by centrifugal casting using heated permanent mold. These composites consist of three layers: inner layer segregates lots of blocky primary Mg 2 Si and a litter blocky primary Si, middle layer contains without primary Mg 2 Si and primary Si, outer layer contains primary Mg 2 Si and primary Si. The position, quantity and distribution of primary Mg 2 Si and primary Si in the composites are determined jointly by alloy composition, solidification velocity under the effect of centrifugal force and their floating velocity inward. Na salt modifier can refine grain and primary Mg 2 Si and make primary Mg 2 Si distribute more evenly and make primary Si nodular. For centrifugally cast Zn-27Al-3.2Mg-1.8Si alloy, the microstructures of inner layer, middle layer and outer layer are almost similar, single layer materials without primary Mg 2 Si and primary Si are obtained, and their grain sizes increased with the mold temperature increasing

  14. siRNAmod: A database of experimentally validated chemically modified siRNAs.

    Science.gov (United States)

    Dar, Showkat Ahmad; Thakur, Anamika; Qureshi, Abid; Kumar, Manoj

    2016-01-28

    Small interfering RNA (siRNA) technology has vast potential for functional genomics and development of therapeutics. However, it faces many obstacles predominantly instability of siRNAs due to nuclease digestion and subsequently biologically short half-life. Chemical modifications in siRNAs provide means to overcome these shortcomings and improve their stability and potency. Despite enormous utility bioinformatics resource of these chemically modified siRNAs (cm-siRNAs) is lacking. Therefore, we have developed siRNAmod, a specialized databank for chemically modified siRNAs. Currently, our repository contains a total of 4894 chemically modified-siRNA sequences, comprising 128 unique chemical modifications on different positions with various permutations and combinations. It incorporates important information on siRNA sequence, chemical modification, their number and respective position, structure, simplified molecular input line entry system canonical (SMILES), efficacy of modified siRNA, target gene, cell line, experimental methods, reference etc. It is developed and hosted using Linux Apache MySQL PHP (LAMP) software bundle. Standard user-friendly browse, search facility and analysis tools are also integrated. It would assist in understanding the effect of chemical modifications and further development of stable and efficacious siRNAs for research as well as therapeutics. siRNAmod is freely available at: http://crdd.osdd.net/servers/sirnamod.

  15. Development of SiC/SiC composite for fusion application

    International Nuclear Information System (INIS)

    Kohyama, A.; Katoh, Y.; Snead, L.L.; Jones, R.H.

    2001-01-01

    The recent efforts to develop SiC/SiC composite materials for fusion application under the collaboration with Japan and the USA are provided, where material performance with and without radiation damage has been greatly improved. One of the accomplishments is development of the high performance reaction sintering process. Mechanical and thermal conductivity are improved extensively by process modification and optimization with inexpensive fabrication process. The major efforts to make SiC matrix by CVI, PIP and RS methods are introduced together with the representing baseline properties. The resent results on mechanical properties of SiC/SiC under neutron irradiation are quite positive. The composites with new SiC fibers, Hi-Nicalon Type-S, did not exhibit mechanical property degradation up to 10 dpa. Based on the materials data recently obtained, a very preliminary design window is provided and the future prospects of SiC/SiC technology integration is provided. (author)

  16. Growth of CoSi2 on Si(001) by reactive deposition epitaxy

    International Nuclear Information System (INIS)

    Lim, C.W.; Shin, C.-S.; Gall, D.; Zuo, J.M.; Petrov, I.; Greene, J.E.

    2005-01-01

    CaF 2 -structure CoSi 2 layers were formed on Si(001) by reactive deposition epitaxy (RDE) and compared with CoSi 2 layers obtained by conventional solid phase growth (SPG). In both sets of experiments, Co was deposited by ultrahigh-vacuum magnetron sputtering and CoSi 2 formed at 600 deg. C. However, in the case of RDE, CoSi 2 formation occurred during Co deposition while for SPG, Co was deposited at 25 deg. C and silicidation took place during subsequent annealing. X-ray diffraction pole figures and transmission electron microscopy results demonstrate that RDE CoSi 2 layers are epitaxial with a cube-on-cube relationship (001) CoSi 2 parallel (001) Si and [100] CoSi 2 parallel[100] Si . In contrast, SPG films are polycrystalline with an average grain size of ≅1000 A and a mixed 111/002/022/112 orientation. We attribute the striking difference to rapid Co diffusion into the Si(001) substrate during RDE for which the high Co/Si reactivity gives rise to a flux-limited reaction resulting in the direct formation of the disilicide phase. In contrast, sequential nucleation and transformation among increasingly Si-rich phases--from orthorhombic Co 2 Si to cubic CoSi to CoSi 2 --during SPG results in polycrystalline layers with a complex texture

  17. Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures

    International Nuclear Information System (INIS)

    Xu, Jie; Xu, Jun; Wang, Yuefei; Cao, Yunqing; Li, Wei; Yu, Linwei; Chen, Kunji

    2014-01-01

    Microscopic charge injection into the SiC/Si nanocrystals/SiC sandwiched structures through a biased conductive AFM tip is subsequently characterized by both electrostatic force microscopy and Kelvin probe force microscopy (KPFM). The charge injection and retention characteristics are found to be affected by not only the band offset at the Si nanocrystals/SiC interface but also the doping type of the Si substrate. On the other hand, capacitance–voltage (C–V) measurements investigate the macroscopic charging effect of the sandwiched structures with a thicker SiC capping layer, where the charges are injected from the Si substrates. The calculated macroscopic charging density is 3–4 times that of the microscopic one, and the possible reason is the underestimation of the microscopic charging density caused by the averaging effect and detection delay in the KPFM measurements. (paper)

  18. Comparative study of SiC- and Si-based photovoltaic inverters

    Science.gov (United States)

    Ando, Yuji; Oku, Takeo; Yasuda, Masashi; Shirahata, Yasuhiro; Ushijima, Kazufumi; Murozono, Mikio

    2017-01-01

    This article reports comparative study of 150-300 W class photovoltaic inverters (Si inverter, SiC inverter 1, and SiC inverter 2). In these sub-kW class inverters, the ON-resistance was considered to have little influence on the efficiency. The developed SiC inverters, however, have exhibited an approximately 3% higher direct current (DC)-alternating current (AC) conversion efficiency as compared to the Si inverter. Power loss analysis indicated a reduction in the switching and reverse recovery losses of SiC metal-oxide-semiconductor field-effect transistors used for the DC-AC converter is responsible for this improvement. In the SiC inverter 2, an increase of the switching frequency up to 100 kHz achieved a state-of-the-art combination of the weight (1.25 kg) and the volume (1260 cm3) as a 150-250 W class inverter. Even though the increased switching frequency should cause the increase of the switching losses, the SiC inverter 2 exhibited an efficiency comparable to the SiC inverter 1 with a switching frequency of 20 kHz. The power loss analysis also indicated a decreased loss of the DC-DC converter built with SiC Schottky barrier diodes led to the high efficiency for its increased switching frequency. These results clearly indicated feasibility of SiC devices even for sub-kW photovoltaic inverters, which will be available for the applications where compactness and efficiency are of tremendous importance.

  19. Influence of SiC coating thickness on mechanical properties of SiCf/SiC composite

    Science.gov (United States)

    Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

    2013-11-01

    Silicon carbide (SiC) coatings with varying thickness (ranging from 0.14 μm to 2.67 μm) were deposited onto the surfaces of Type KD-I SiC fibres with native carbonaceous surface using chemical vapour deposition (CVD) process. Then, two dimensional SiC fibre reinforced SiC matrix (2D SiCf/SiC) composites were fabricated using polymer infiltration and pyrolysis (PIP) process. Influences of the fibre coating thickness on mechanical properties of SiC fibre and SiCf/SiC composite were investigated using single-filament test and three-point bending test. The results indicated that flexural strength of the composites initially increased with the increasing CVD SiC coating thickness and reached a peak value of 363 MPa at the coating thickness of 0.34 μm. Further increase in the coating thickness led to a rapid decrease in the flexural strength of the composites. The bending modulus of composites showed a monotonic increase with increasing coating thickness. A chemical attack of hydrogen or other ions (e.g. a C-H group) on the surface of SiC fibres during the coating process, owing to the formation of volatile hydrogen, lead to an increment of the surface defects of the fibres. This was confirmed by Wang et al. [35] in their work on the SiC coating of the carbon fibre. In the present study, the existing ˜30 nm carbon on the surface of KD-I fibre [36] made the fibre easy to be attacked. Deposition of non-stoichiometric SiC, causing a decrease in strength. During the CVD process, a small amount of free silicon or carbon always existed [35]. The existence of free silicon, either disordered the structure of SiC and formed a new source of cracks or attacked the carbon on fibre surface resulting in properties degeneration of the KD-I fibre. The effect of residual stress. The different thermal expansion coefficient between KD-I SiC fibre and CVD SiC coating, which are 3 × 10-6 K-1 (RT ˜ 1000 °C) and 4.6 × 10-6 K-1 (RT ˜ 1000 °C), respectively, could cause residual stress

  20. Conversion of wood flour/SiO2/phenolic composite to porous SiC ceramic containing SiC whiskers

    Directory of Open Access Journals (Sweden)

    Li Zhong

    2013-01-01

    Full Text Available A novel wood flour/SiO2/phenolic composite was chosen to be converted into porous SiC ceramic containing SiC whiskers via carbothermal reduction. At 1550°C the composite is converted into porous SiC ceramic with pore diameters of 10~40μm, and consisting of β-SiC located at the position of former wood cell walls. β-SiC wire-like whiskers of less than 50 nm in diameter and several tens to over 100 μm in length form within the pores. The surface of the resulting ceramic is coated with β-SiC necklace-like whiskers with diameters of 1~2μm.

  1. Tunable Synthesis of SiC/SiO2 Heterojunctions via Temperature Modulation

    Directory of Open Access Journals (Sweden)

    Wei Li

    2018-05-01

    Full Text Available A large-scale production of necklace-like SiC/SiO2 heterojunctions was obtained by a molten salt-mediated chemical vapor reaction technique without a metallic catalyst or flowing gas. The effect of the firing temperature on the evolution of the phase composition, microstructure, and morphology of the SiC/SiO2 heterojunctions was studied. The necklace-like SiC/SiO2 nanochains, several centimeters in length, were composed of SiC/SiO2 core-shell chains and amorphous SiO2 beans. The morphologies of the as-prepared products could be tuned by adjusting the firing temperature. In fact, the diameter of the SiO2 beans decreased, whereas the diameter of the SiC fibers and the thickness of the SiO2 shell increased as the temperature increased. The growth mechanism of the necklace-like structure was controlled by the vapor-solid growth procedure and the modulation procedure via a molten salt-mediated chemical vapor reaction process.

  2. El cáncer colorrectal en España. Costes por incapacidad temporal y opciones preventivas desde las empresas

    Directory of Open Access Journals (Sweden)

    M.T. Vicente-Herrero

    2013-04-01

    Conclusiones: Sirvan los resultados para valorar la utilidad de la implantación de estrategias de apoyo a la sanidad pública para una mayor reducción de la prevalencia, mortalidad y mejora de la calidad de vida de los afectados y sus familias, junto con un ahorro económico derivado de la reducción de la IT derivada del cáncer colorrectal.

  3. (113) Facets of Si-Ge/Si Islands; Atomic Scale Simulation

    Science.gov (United States)

    Kassem, Hassan

    We have studied, by computer simulation, some static and vibrationnal proprieties of SiGe/Si islands. We have used a Valence Force Field combined to Monte Carlo technique to study the growth of Ge and SiGe on (001)Si substrates. We have focalised on the case of large pyramidal islands presenting (113) facets on the free (001)Si surface with various non uniform composition inside the islands. The deformation inside the islands and Raman spectroscopy are discussed.

  4. Evaluación de un proyecto de inversión usando opciones reales para diferenciar el aguacate

    OpenAIRE

    Karina Valencia Sandoval

    2016-01-01

    El estudio se centra en la comparación de las ganancias obtenidas en el cultivo de aguacate (Persea americana Mill.) cuando se le añade mayor valor agregado: destacando sus propiedades funcionales, se integra a esta comparación la volatilidad de los precios del fruto. Se centra en las entidades de mayor producción: Michoacán, Morelos, Nayarit, México, Jalisco, Puebla y Yucatán. La metodología se fundamenta tanto en evaluaciones tradicionales (VAN) como en el uso de árboles binomiales y fórmul...

  5. Effect of laser beam position on mechanical properties of F82H/SUS316L butt-joint welded by fiber laser

    Energy Technology Data Exchange (ETDEWEB)

    Serizawa, Hisashi, E-mail: serizawa@jwri.osaka-u.ac.jp [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Mori, Daiki; Ogiwara, Hiroyuki; Mori, Hiroaki [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2014-10-15

    Highlights: • The micro hardness of weld metal in F82H/SUS316L joint partially decreases after PWHT by shifting beam position to SUS316L. • Charpy impact energy of F82H/SUS316L joint obviously increases after PWHT due to the release of residual stress. • The tensile strength of weld metal in F82H/SUS316L joint is higher than that of SUS316L. • The fiber laser welding seems to be one of the most candidate methods to join between F82H and SUS316L pipes practically. - Abstract: A dissimilar butt-joint between reduced activation ferritic/martensitic steel F82H and SUS316L austenitic stainless steel was made by 4 kW fiber laser and the influence of laser beam position on its mechanical properties before and after post-weld heat treatment (PWHT) was examined at room temperature. From the nano-indentation measurements and the microstructural observations, it is found that the micro hardness of weld metal partially decreases after PWHT by shifting beam position to SUS316L because its phase seems to move from only the martensitic phase to the mixture of austenitic and martensitic phases. In addition, Charpy impact test suggests that the impact energy slightly increases by shifting beam position before PWHT and obviously increases after PWHT due to the release of residual stress. Moreover, the tensile test indicates that the tensile strength of weld metal is higher than that of SUS316L and the fracture occurs at the base metal of SUS316L regardless of laser beam position.

  6. Organizative structure of the System for Integral Management of Archive Documents (SiGeID 1.0

    Directory of Open Access Journals (Sweden)

    Irima Campillo Torres

    2012-04-01

    Full Text Available El nuevo contexto impone a las organizaciones la necesidad vital de disponer de adecuadas infraestructuras de comunicación, que les permitan conseguir un conocimiento real y suficiente del entorno. El presente artículo pretende mostrar la estructura organizativa del Sistema de Gestión Integral de Documentos de archivo SiGeID (1.0, como una herramienta informática que ayuda a las organizaciones empresariales al perfeccionamiento de la gestión de documentos. Dividido en tres módulos: Gestión y Seguridad Documental, Gestión de Archivo y Administración y Configuración, se tienen en cuenta además sus requerimientos funcionales y no funcionales

  7. Photoemission study on electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces

    International Nuclear Information System (INIS)

    Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2017-01-01

    Electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces have been investigated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. From the analysis of the cut-off energy for secondary photoelectrons measured at each thinning step of a dielectric layer by wet-chemical etching, an abrupt potential change caused by electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces has been clearly detected. Al-gate MOS capacitors with thermally-grown SiO_2 and a HfO_2/SiO_2 dielectric stack were fabricated to evaluate the Al work function from the flat band voltage shift of capacitance-voltage (C-V) characteristics. Comparing the results of XPS and C-V measurements, we have verified that electrical dipole formed at the interface can be directly measured by photoemission measurements. (author)

  8. IDENTIFICATION AND CHARACTERIZATION OF THE SUCROSE SYNTHASE 2 GENE (Sus2 IN DURUM WHEAT

    Directory of Open Access Journals (Sweden)

    Mariateresa eVolpicella

    2016-03-01

    Full Text Available Sucrose transport is the central system for the allocation of carbon resources in vascular plants. Sucrose synthase, which reversibly catalyzes sucrose synthesis and cleavage, represents a key enzyme in the control of the flow of carbon into starch biosynthesis. In the present study the genomic identification and characterization of the Sus2-2A and Sus2-2B genes coding for sucrose synthase in durum wheat (cultivars Ciccio and Svevo is reported. The genes were analyzed for their expression in different tissues and at different seed maturation stages, in four tetraploid wheat genotypes (Svevo, Ciccio, Primadur and 5-BIL42. The activity of the encoded proteins was evaluated by specific activity assays on endosperm extracts and their structure established by modelling approaches. The combined results of SUS2 expression and activity levels were then considered in the light of their possible involvement in starch yield.

  9. Compositional and optical properties of SiO x films and (SiO x /SiO y ) junctions deposited by HFCVD

    Science.gov (United States)

    2014-01-01

    In this work, non-stoichiometric silicon oxide (SiO x ) films and (SiO x /SiO y ) junctions, as-grown and after further annealing, are characterized by different techniques. The SiO x films and (SiO x /SiO y ) junctions are obtained by hot filament chemical vapor deposition technique in the range of temperatures from 900°C to 1,150°C. Transmittance spectra of the SiO x films showed a wavelength shift of the absorption edge thus indicating an increase in the optical energy band gap, when the growth temperature decreases; a similar behavior is observed in the (SiO x /SiO y ) structures, which in turn indicates a decrease in the Si excess, as Fourier transform infrared spectroscopy (FTIR) reveals, so that, the film and junction composition changes with the growth temperature. The analysis of the photoluminescence (PL) results using the quantum confinement model suggests the presence of silicon nanocrystal (Si-nc) embedded in a SiO x matrix. For the case of the as-grown SiO x films, the absorption and emission properties are correlated with quantum effects in Si-nc and defects. For the case of the as-grown (SiO x /SiO y ) junctions, only the emission mechanism related to some kinds of defects was considered, but silicon nanocrystal embedded in a SiO x matrix is present. After thermal annealing, a phase separation into Si and SiO2 occurs, as the FTIR spectra illustrates, which has repercussions in the absorption and emission properties of the films and junctions, as shown by the change in the A and B band positions on the PL spectra. These results lead to good possibilities for proposed novel applications in optoelectronic devices. PACS 61.05.-a; 68.37.Og; 61.05.cp; 78.55.-m; 68.37.Ps; 81.15.Gh PMID:25342935

  10. Thermal Stability of siRNA Modulates Aptamer- conjugated siRNA Inhibition

    Directory of Open Access Journals (Sweden)

    Alexey Berezhnoy

    2012-01-01

    Full Text Available Oligonucleotide aptamer-mediated in vivo cell targeting of small interfering RNAs (siRNAs is emerging as a useful approach to enhance the efficacy and reduce the adverse effects resulting from siRNA-mediated genetic interference. A current main impediment in aptamer-mediated siRNA targeting is that the activity of the siRNA is often compromised when conjugated to an aptamer, often requiring labor intensive and time consuming design and testing of multiple configurations to identify a conjugate in which the siRNA activity has not been significantly reduced. Here, we show that the thermal stability of the siRNA is an important parameter of siRNA activity in its conjugated form, and that siRNAs with lower melting temperature (Tm are not or are minimally affected when conjugated to the 3′ end of 2′F-pyrimidine-modified aptamers. In addition, the configuration of the aptamer-siRNA conjugate retains activity comparable with the free siRNA duplex when the passenger strand is co-transcribed with the aptamer and 3′ overhangs on the passenger strand are removed. The approach described in this paper significantly reduces the time and effort necessary to screening siRNA sequences that retain biological activity upon aptamer conjugation, facilitating the process of identifying candidate aptamer-siRNA conjugates suitable for in vivo testing.

  11. An Isotope Study of Hydrogenation of poly-Si/SiOx Passivated Contacts for Si Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel; Nemeth, William; van de Loo, Bas, W.H.; Macco, Bart; Kessels, Wilhelmus, M.M.; Stradins, Paul; Young, David, L.

    2017-06-26

    For many years, the record Si solar cell efficiency stood at 25.0%. Only recently have several companies and institutes managed to produce more efficient cells, using passivated contacts of made doped poly-Si or a-Si:H and a passivating intrinsic interlayer in all cases. Common to these designs is the need to passivate the layer stack with hydrogen. In this contribution, we perform a systematic study of passivated contact passivation by hydrogen, using poly-Si/SiOx passivated contacts on n-Cz-Si, and ALD Al2O3 followed by a forming gas anneal (FGA) as the hydrogen source. We study p-type and n-type passivated contacts with implied Voc exceeding 690 and 720 mV, respectively, and perform either the ALD step or the FGA with deuterium instead of hydrogen in order to separate the two processes via SIMS. By examining the deuterium concentration at the SiOx in both types of samples, we demonstrate that the FGA supplies negligible hydrogen species to the SiOx, regardless of whether the FGA is hydrogenated or deuterated. Instead, it supplies the thermal energy needed for hydrogen species in the Al2O3 to diffuse there. Furthermore, the concentration of hydrogen species at the SiOx can saturate while implied Voc continues to increase, showing that the energy from the FGA is also required for hydrogen species already at the SiOx to find recombination-active defects to passivate.

  12. Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

    Science.gov (United States)

    Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

    2018-04-01

    The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

  13. Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers

    Science.gov (United States)

    Chagarov, Evgueni A.; Kavrik, Mahmut S.; Fang, Ziwei; Tsai, Wilman; Kummel, Andrew C.

    2018-06-01

    Comprehensive Density-Functional Theory (DFT) Molecular Dynamics (MD) simulations were performed to investigate interfaces between a-HfO2 and SiGe or Ge semiconductors with fully-stoichiometric a-SiO2 or sub-oxide SiO interlayers. The electronic structure of the selected stacks was calculated with a HSE06 hybrid functional. Simulations were performed before and after hydrogen passivation of residual interlayer defects. For the SiGe substrate with Ge termination prior to H passivation, the stacks with a-SiO suboxide interlayer (a-HfO2/a-SiO/SiGe) demonstrate superior electronic properties and wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/SiGe). After H passivation, most of the a-HfO2/a-SiO2/SiGe defects are passivated. To investigate effect of random placement of Si and Ge atoms additional simulations with a randomized SiGe slab were performed demonstrating improvement of electronic structure. For Ge substrates, before H passivation, the stacks with a SiO suboxide interlayer (a-HfO2/a-SiO/Ge) also demonstrate wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/Ge). However, even for a-HfO2/a-SiO/Ge, the Fermi level is shifted close to the conduction band edge (CBM) consistent with Fermi level pinning. Again, after H passivation, most of the a-HfO2/a-SiO2/Ge defects are passivated. The stacks with fully coordinated a-SiO2 interlayers have much stronger deformation and irregularity in the semiconductor (SiGe or Ge) upper layers leading to multiple under-coordinated atoms which create band-edge states and decrease the band-gap prior to H passivation.

  14. TELEVISIÓN EDUCATIVA Y DESASTRES NATURALES: ESCOLARES CHILENOS Y SUS PROFESORAS VALORAN USO DEL VIDEO EDUCATIVO EN EL AULA

    Directory of Open Access Journals (Sweden)

    Carolina Rodríguez Malebrán

    2016-01-01

    Full Text Available El uso del video educativo como recurso didáctico ha permitido complementar el aprendizaje del estudiantado y apoyar el trabajo de los y las docentes. Si bien, en internet existen numerosos sitios especializados con videos educativos que pueden ser utilizados por los profesores y las profesoras en sus clases, la gran mayoría de estos recursos no han sido valorados por su principal público: estudiantes y docentes. El presente artículo describe la valoración que estudiantes de sexto año básico de la escuela pública David León Tapia, de la localidad de Tongoy en Chile, realizaron del video educativo “Benvoy y las hormigas”, que busca apoyar el aprendizaje del alumnado sobre los desastres naturales, sus causas, consecuencias y prevención. Para ello se solicitó a 27 alumnos y alumnas que contestaran una encuesta, luego de haber observado el video educativo dentro de su sala de clases, posteriormente se aplicaron entrevistas semiestructuradas a las docentes del curso. Se les consultó por preferencias de contenidos, tipos de recursos para el aprendizaje y relación con su entorno. Podemos concluir que la mayoría de los y las estudiantes que participaron en la encuesta indicaron que el video “Benvoy y las hormigas” les había ayudado a comprender los desastres naturales, calificándolo positivamente. Sobre los contenidos, los y las escolares mostraron preferencia por los capítulos sobre la prevención y normas de seguridad que se deben tomar ante desastres naturales y, en segundo lugar, las causas y consecuencias de los tsunamis. Las docentes, por su parte, destacaron la trama y la relación de los personajes con la vida cotidiana de los estudiantes.

  15. Gd-Ni-Si system

    International Nuclear Information System (INIS)

    Bodak, O.I.; Shvets, A.F.

    1983-01-01

    By X-ray phase analysis method isothermal cross section of phase diagram of the Gd-Ni-Si system at 870 K is studied. The existence of nine previously known compounds (GdNisub(6.72)Sisub(6.28), GdNi 10 Si 2 , GdNi 5 Si 3 , GdNi 4 Si, GdNi 2 Si 2 , GdNiSi 3 , GdNiSi 2 , Gd 3 Ni 6 Si 2 and GdNiSi) is confirmed and three new compounds (GdNisub(0.2)Sisub(1.8), Gdsub(2)Nisub(1-0.8)Sisub(1-1.2), Gd 5 NiSi 4 ) are found. On the base of Gd 2 Si 3 compound up to 0.15 at. Ni fractions, an interstitial solid solution is formed up to 0.25 at Ni fractions dissolution continues of substitution type. The Gd-Ni-Si system is similar to the Y-Ni-Si system

  16. Comparative study on stress in AlGaN/GaN HEMT structures grown on 6H-SiC, Si and on composite substrates of the 6H-SiC/poly-SiC and Si/poly-SiC

    International Nuclear Information System (INIS)

    Guziewicz, M; Kaminska, E; Piotrowska, A; Golaszewska, K; Domagala, J Z; Poisson, M-A; Lahreche, H; Langer, R; Bove, P

    2008-01-01

    The stresses in GaN-based HEMT structures grown on both single crystal 6H SiC(0001) and Si(111) have been compared to these in the HEMT structures grown on new composite substrates engendered as a thin monocrystalline film attached to polycrystalline 3C-SiC substrate. By using HRXRD technique and wafer curvature method we show that stress of monocrystalline layer in composite substrates of the type mono-Si/poly-SiC is lower than 100 MPa and residual stress of epitaxial GaN buffer grown on the composite substrate does not exceed 0.31 GPa, but in the cases of single crystal SiC or Si substrates the GaN buffer stress is compressive in the range of -0.5 to -0.75 GPa. The total stress of the HEMT structure calculated from strains is consistent with the averaged stress of the multilayers stack measured by wafer curvature method. The averaged stress of HEMT structure grown on single crystals is higher than those in structures grown on composites substrates

  17. 3C-SiC nanocrystal growth on 10° miscut Si(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Deokar, Geetanjali, E-mail: gitudeo@gmail.com [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); D' Angelo, Marie; Demaille, Dominique [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Cavellin, Catherine Deville [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil F-94010 (France)

    2014-04-01

    The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO{sub 2} thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO{sub 2} atmosphere. The influence of the atomic steps at the vicinal SiO{sub 2}/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO{sub 2} pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth. - Highlights: • Synthesis of 3C-SiC nanocrystals epitaxied on miscut-Si using a simple technique • Evidence of domain matching epitaxy at the SiC/Si interface • SiC growth proceeds along the (001) plane of host Si. • Substantial enhancement of the SiC nanocrystal density due to the miscut • Effect of the process parameters (CO{sub 2} pressure and annealing duration)

  18. SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

    Science.gov (United States)

    Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

    2017-08-01

    In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

  19. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    International Nuclear Information System (INIS)

    Wu Yuying; Liu Xiangfa; Jiang Binggang; Huang Chuanzhen

    2009-01-01

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  20. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    Energy Technology Data Exchange (ETDEWEB)

    Wu Yuying [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China)], E-mail: wyy532001@163.com; Liu Xiangfa [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Shandong Binzhou Bohai Piston Co., Ltd., Binzhou 256602, Shandong (China); Jiang Binggang [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Huang Chuanzhen [School of Mechanical Engineering, Shandong University, Jinan 250061 (China)

    2009-05-27

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  1. Effect of irradiation on thermal expansion of SiCf/SiC composites

    International Nuclear Information System (INIS)

    Senor, D.J.; Trimble, D.J.; Woods, J.J.

    1996-06-01

    Linear thermal expansion was measured on five different SiC-fiber-reinforced/SiC-matrix (SiC f /SiC) composite types in the unirradiated and irradiated conditions. Two matrices were studied in combination with Nicalon CG reinforcement and a 150 nm PyC fiber/matrix interface: chemical vapor infiltrated (CVI) SiC and liquid-phase polymer impregnated precursor (PIP) SiC. Composites of PIP SiC with Tyranno and HPZ fiber reinforcement and a 150 nm PyC interface were also tested, as were PIP SiC composites with Nicalon CG reinforcement and a 150 nm BN fiber/matrix interface. The irradiation was conducted in the Experimental Breeder Reactor-II at a nominal temperature of 1,000 C to doses of either 33 or 43 dpa-SiC. Irradiation caused complete fiber/matrix debonding in the CVI SiC composites due to a dimensional stability mismatch between fiber and matrix, while the PIP SiC composites partially retained their fiber/matrix interface after irradiation. However, the thermal expansion of all the materials tested was found to be primarily dependent on the matrix and independent of either the fiber or the fiber/matrix interface. Further, irradiation had no significant effect on thermal expansion for either the CVI SiC or PIP SiC composites. In general, the thermal expansion of the CVI SiC composites exceeded that of the PIP SiC composites, particularly at elevated temperatures, but the expansion of both matrix types was less than chemical vapor deposited (CVD) β-SiC at all temperatures

  2. Sustainability of public health in diadema, 2000 - 2011: a picture of SUS building limits

    Directory of Open Access Journals (Sweden)

    Mariana Alves Melo

    2015-12-01

    Full Text Available Introduction: between 2000 to 2011, Diadema paulista municipality has faced many obstacles in health management, struggling to ensure the sustainability of its health system. Objective: to contribute to the discussion of the Unified Health System (SUS and its foreseable turbulent future, based on the analysis of the municipal point of view, identifying the limits of its building in Diadema. Methods: Diadema is characterized as one of the first municipalities that adhered to the principles of the SUS, since its implementation, allowing an analysis as a case study in view of the system's sustainability at the local level. The term sustainability used was addressed in two dimensions: the structure of this system and its process. Results: in SUS implementation period, Diadema stood out by increasing investment in health, reaching an average allocation of about 30% of its tax revenues, including constitutional transfers. Results diagnosed by observing the structure of dimensions and the process indicate that the sustainability of the municipal health system is threatened, as the significant expansion of the range of services and health actions was not followed by sufficient resources to its health maintenance. Conclusions: the existence of obstacles justified and formed the basis for the diagnosis of the main limits on SUS conformation, in health policy and management of resources, funding and budgetary impacts.

  3. Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers

    International Nuclear Information System (INIS)

    Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

    2017-01-01

    The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [es

  4. Sindicalismo, SUS e planos de saúde Trade unionism, Unified Health System (SUS and private health insurance

    Directory of Open Access Journals (Sweden)

    José Augusto Pina

    2006-09-01

    Full Text Available Este artigo discute a interlocução do sindicalismo brasileiro com o Sistema Único de Saúde (SUS e os planos e seguros privados de saúde. São ponderadas algumas teses na Saúde Coletiva à luz de estudos mais recentes nas Ciências Sociais sobre o sindicalismo e realizada análise documental para o caso da Central Única dos Trabalhadores (CUT, tomado aqui como referência. Aponta-se a necessidade de considerar os pesos relativos que a ação sindical atribuiu a cada um dos aspectos da relação, SUS e planos privados de saúde, pelas distintas conjunturas do país. O conflito entre trabalhadores e empresas somado ao desemprego e à precarização do trabalho expõe os limites das coberturas assistenciais privadas e impele a representação sindical a pleitear a intervenção estatal. O trabalho refletiu sobre as distintas modalidades de ação sindical na empresa e no Estado. A complexidade dessa dinâmica fez emergir um setor sindical interessado na gestão da previdência complementar e dos planos de saúde e, ao mesmo tempo, recria as circunstâncias e traz novas possibilidades de as organizações sindicais se colocarem na cena política e aglutinar os interesses de amplos segmentos dos trabalhadores para pressionar o Estado na defesa da melhoria do sistema público de saúde.The article intends to discuss the patterns of interlocution between the Brazilian trade unionism, the public health system (SUS and the private health insurance sector. Some thesis originated in the Public Health area about the subject are debated, in the light of more recent Social Science's studies concerned the Brazilian unionism. It presents a documentary analysis for the case of the largest National Workers Organization, named CUT. The need to discuss the problem in distinct political and economic conjunctures of the country is pointed out. The conflicts between the workers and the companies, added to the unemployment and deregulation of the labor markets

  5. Effect of germanium concentrations on tunnelling current calculation of Si/Si1-xGex/Si heterojunction bipolar transistor

    Science.gov (United States)

    Hasanah, L.; Suhendi, E.; Khairrurijal

    2018-05-01

    Tunelling current calculation on Si/Si1-xGex/Si heterojunction bipolar transistor was carried out by including the coupling between transversal and longitudinal components of electron motion. The calculation results indicated that the coupling between kinetic energy in parallel and perpendicular to S1-xGex barrier surface affected tunneling current significantly when electron velocity was faster than 1x105 m/s. This analytical tunneling current model was then used to study how the germanium concentration in base to Si/Si1-xGex/Si heterojunction bipolar transistor influenced the tunneling current. It is obtained that tunneling current increased as the germanium concentration given in base decreased.

  6. Thermochemical instability effects in SiC-based fibers and SiC{sub f}/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Henager, C.H.; Jones, R.H. [Pacific Northwest National Laboratory, Richland, WA (United States)

    1997-08-01

    Thermochemical instability in irradiated SiC-based fibers with an amorphous silicon oxycarbide phase leads to shrinkage and mass loss. SiC{sub f}/SiC composites made with these fibers also exhibit mass loss as well as severe mechanical property degradation when irradiated at 800{degrees}C, a temperature much below the generally accepted 1100{degrees}C threshold for thermomechanical degradation alone. The mass loss is due to an internal oxidation mechanism within these fibers which likely degrades the carbon interphase as well as the fibers in SiC{sub f}/SiC composites even in so-called {open_quotes}inert{close_quotes} gas environments. Furthermore, the mechanism must be accelerated by the irradiation environment.

  7. Determination of optimum Si excess concentration in Er-doped Si-rich SiO2 for optical amplification at 1.54 μm

    International Nuclear Information System (INIS)

    Savchyn, Oleksandr; Coffey, Kevin R.; Kik, Pieter G.

    2010-01-01

    The presence of indirect Er 3+ excitation in Si-rich SiO 2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er 3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be ∼14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and ∼11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 μm in devices based on Er-doped Si-rich SiO 2 .

  8. Oxidation protection of multilayer CVD SiC/B/SiC coatings for 3D C/SiC composite

    International Nuclear Information System (INIS)

    Liu Yongsheng; Cheng Laifei; Zhang Litong; Wu Shoujun; Li Duo; Xu Yongdong

    2007-01-01

    A CVD boron coating was introduced between two CVD SiC coating layers. EDS and XRD results showed that the CVD B coating was a boron crystal without other impurity elements. SEM results indicated that the CVD B coating was a flake-like or column-like crystal with a compact cross-section. The crack width in the CVD SiC coating deposited on CVD B is smaller than that in a CVD SiC coating deposited on CVD SiC coating. After oxidation at 700 deg. C and 1000 deg. C, XRD results indicated that the coating was covered by product B 2 O 3 or B 2 O 3 .xSiO 2 film. The cracks were sealed as observed by SEM. There was a large amount of flake-like material on hybrid coating surface after oxidation at 1300 deg. C. Oxidation weight loss and residual flexural strength results showed that hybrid SiC/B/SiC multilayer coating provided better oxidation protection for C/SiC composite than a three layer CVD SiC coating at temperatures from 700 deg. C to 1000 deg. C for 600 min, but worse oxidation protection above 1000 deg. C due to the large amount of volatilization of B 2 O 3 or B 2 O 3 .xSiO 2

  9. Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers; Las tensiones residuales y las propiedades mecánicas de compuestos multicapa de Si3N4/SiC con diferentes capas de SiC

    Energy Technology Data Exchange (ETDEWEB)

    Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

    2017-11-01

    The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [Spanish] Se ha investigado el efecto de las tensiones residuales en la resistencia, dureza y trabajo de fractura de los compuestos multicapa de Si3N4/SiC con diferentes capas de SiC. Puede ser una manera eficaz de diseñar y optimizar las propiedades mecánicas de los compuestos multicapa de Si3N4/SiC mediante el control de las propiedades de las capas de SiC. Los compuestos multicapa de Si3N4/SiC con diferentes capas de SiC se fabricaron por medio de colado en cinta en medio acuoso y sinterización sin presión. Las tensiones residuales se calcularon mediante el uso de la simulación ANSYS, los valores máximos de las fuerzas de tracción y compresión fueron 553,2 MPa y −552,1 MPa, respectivamente. Se observó una fractura escalonada a partir de las superficies de fractura. La fracción de capas de deslaminación aumenta con la tensión residual, lo que puede mejorar la fiabilidad de los materiales. La fuerza de tracción residual era beneficiosa para la mejora de la dureza y el trabajo de fractura, pero la resistencia de los compuestos disminuyó.

  10. Circumferential tensile test method for mechanical property evaluation of SiC/SiC tube

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Ju-Hyeon, E-mail: 15096018@mmm.muroran-it.ac.jp [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Park, Joon-soo [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Nakazato, Naofumi [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE SiC/SiC cooling channel system to be a candidate of divertor system in future. • Hoop strength is one of the important factors for a tube. • This research studies the relationship between deformation and strain of SiC/SiC tube. - Abstract: SiC fiber reinforced/SiC matrix (SiC/SiC) composite is expected to be a candidate material for the first-wall, components in the blanket and divertor of fusion reactors in future. In such components, SiC/SiC composites need to be formed to be various shapes. SiC/SiC tubes has been expected to be employed for blanket and divertor after DEMO reactor, but there is not established mechanical investigation technique. Recent progress of SiC/SiC processing techniques is likely to realize strong, having gas tightness SiC/SiC tubes which will contribute for the development of fusion reactors. This research studies the relationship between deformation and strain of SiC/SiC tube using a circumferential tensile test method to establish a mechanical property investigation method of SiC/SiC tubes.

  11. La creación del mundo supralunar según Abraham Ibn Ezra: un estudio comparativo de sus dos comentarios a Génesis 1,14

    Directory of Open Access Journals (Sweden)

    Sela, Shlomo

    2003-06-01

    Full Text Available This article aims at elucidating Abraham Ibn Ezra's (ca. 1089 - ca. 1167 opinion about the creation of the supra-lunar world. A major and striking feature of Ibn Ezra's approach is that he did not find it convenient to address this issue, intimately related to the nature of the celestial bodies, in his astronomical or astrological treatises, but rather in his biblical commentaries. Therefore, we propose to concentrate our efforts on the meticulous study of the two commentaries which Ibn Ezra wrote on Genesis 1,14. As this verse focuses on the account of the creation of the heavenly bodies, we have assumed that the elusive Ibn Ezra could not have avoided revealing his view, or, at least, that we should have left some significant hints from which we may uncover his genuine opinion about the creation of the supra-lunar world.

    El propósito de este artículo es averiguar la opinión de Abraham Ibn Ezra (ca. 1089 - ca. 1167 sobre lo relacionado con la creación del mundo supralunar. Una característica fundamental dei modus operandi de Ibn Ezra es que, si buscamos información acerca de su opinión sobre la creación del mundo, tanto sublunar como supralunar, no la hallaremos en sus tratados científicos astronómicos o astrológicos, sino precisamente en sus comentarios bíblicos. Por lo tanto, la metodología más adecuada consistirá en concentrar nuestros esfuerzos en el estudio meticuloso de sus dos comentarios a Génesis 1,14. Dado que este verso bíblico tiene como objetivo principal el relato y la descripción de la creación de las luminarias, pensamos que en ambos comentarios Ibn Ezra no pudo haber eludido dar su verdadera opinión -o al menos dejar alguna pista significativa- sobre la creación del mundo supralunar.

  12. Aspectos fisiológicos del catión cinc y sus implicaciones cardiovasculares

    OpenAIRE

    Díaz García, Carlos Manlio; Álvarez González, Julio L.

    2009-01-01

    Introducción La versatilidad del catión cinc en la fisiología de diversos tipos celulares ha conllevado a una creciente atención de la comunidad científica sobre sus roles funcionales y la regulación a la que se encuentran sus niveles. Objetivos Presentar una revisión bibliográfica sobre el tema, con énfasis en las implicaciones cardiovasculares de este catión. Fuente de Datos El buscador Pubmed del Servicio Central de Información Biotecnológica de los Institutos Nacionales para la Ciencia, c...

  13. Dielectric Properties of SiCf/PyC/SiC Composites After Oxidation

    Institute of Scientific and Technical Information of China (English)

    SONG Huihui; ZHOU Wancheng; LUO Fa; QING Yuchang; CHEN Malin; LI Zhimin

    2016-01-01

    In this paper, the SiC fiber-reinforced SiC matrix composites with a 0.15mm thick pyrocarbon interphase (notedas SiCf/PyC/SiC) were prepared by chemical vapor infiltration (CVI). The SiCf/PyC/SiC were oxidized in air at 950℃ for 50h. The dielectric properties after this high temperature oxidation were investigated in X-band from room temperature (RT) to 700℃. Results suggested that:e' of the SiCf/PyC/SiC after oxidation increased at first then de-creased with temperature elevating;e" increased with temperature raising in the temperature range studied.

  14. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001).

    Science.gov (United States)

    Li, Lianbi; Zang, Yuan; Hu, Jichao; Lin, Shenghuang; Chen, Zhiming

    2017-05-25

    The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm², the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm². Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  15. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001

    Directory of Open Access Journals (Sweden)

    Lianbi Li

    2017-05-01

    Full Text Available The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001 Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 <21-1> at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm2, the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm2. Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  16. C-H and C-C activation of n -butane with zirconium hydrides supported on SBA15 containing N-donor ligands: [(≡SiNH-)(≡SiX-)ZrH2], [(≡SiNH-)(≡SiX-)2ZrH], and[(≡SiN=)(≡SiX-)ZrH] (X = -NH-, -O-). A DFT study

    KAUST Repository

    Pasha, Farhan Ahmad; Bendjeriou-Sedjerari, Anissa; Huang, Kuo-Wei; Basset, Jean-Marie

    2014-01-01

    : [(≡SiNH-)(≡SiO-)ZrH2] (A), [(≡SiNH-)2ZrH2] (B), [(≡SiNH-)(≡SiO-) 2ZrH] (C), [(≡SiNH-)2(≡SiO-)ZrH] (D), [(≡SiN=)(≡Si-O-)ZrH] (E), and [(≡SiN=)(≡SiNH-)ZrH] (F). The roles of these hydrides have been investigated in C-H/C-C bond activation and cleavage

  17. Role of the SiO2 buffer layer thickness in the formation of Si/SiO2/nc-Ge/SiO2 structures by dry oxidation

    International Nuclear Information System (INIS)

    Kling, A.; Ortiz, M.I.; Prieto, A.C.; Rodriguez, A.; Rodriguez, T.; Jimenez, J.; Ballesteros, C.; Soares, J.C.

    2006-01-01

    Nanomemories, containing Ge-nanoparticles in a SiO 2 matrix, can be produced by dry thermal oxidation of a SiGe layer deposited onto a Si-wafer with a barrier SiO 2 layer on its top. Rutherford backscattering spectrometry has been used to characterize the kinetics of the oxidation process, the composition profile of the growing oxide, the Ge-segregation and its diffusion into the barrier oxide in samples with thin and thick barrier oxide layers. The Ge segregated during the oxidation of the SiGe layer diffuses into the barrier oxide. In the first case the diffusion through the thin oxide is enhanced by the proximity of the substrate that acts as a sink for the Ge, resulting in the formation of a low Ge concentration SiGe layer in the surface of the Si-wafer. In the second case, the Ge-diffusion progresses as slowly as in bulk SiO 2 . Since barrier oxide layers as thin as possible are favoured for device fabrication, the structures should be oxidized at lower temperatures and the initial SiGe layer thickness reduced to minimize the Ge-diffusion

  18. Microstructure and properties of MoSi2-MoB and MoSi2-Mo5Si3 molybdenum silicides

    International Nuclear Information System (INIS)

    Schneibel, J.H.; Sekhar, J.A.

    2003-01-01

    MoSi 2 -based intermetallics containing different volume fractions of MoB or Mo 5 Si 3 were fabricated by hot-pressing MoSi 2 , MoB, and Mo 5 Si 3 powders in vacuum. Both classes of alloys contained approximately 5 vol.% of dispersed silica phase. Additions of MoB or Mo 5 Si 3 caused the average grain size to decrease. The decrease in the grain size was typically accompanied by an increase in flexure strength, a decrease in the room temperature fracture toughness, and a decrease in the hot strength (compressive creep strength) measured around 1200 deg. C, except when the Mo 5 Si 3 effectively became the major phase. Oxidation measurements on the two classes of alloys were carried out in air. Both classes of alloys were protected from oxidation by an in-situ adherent scale that formed on exposure to high temperature. The scale, although not analyzed in detail, is commonly recognized in MoSi 2 containing materials as consisting mostly of SiO 2 . The MoB containing materials showed an increase in the scale thickness and the cyclic oxidation rate at 1400 deg. C when compared with pure MoSi 2 . However, in contrast with the pure MoSi 2 material, oxidation at 1400 deg. C began with a weight loss followed by a weight gain and the formation of the protective silica layer. The Mo 5 Si 3 containing materials experienced substantial initial weight losses followed by regions of small weight changes. Overall, the MoB and Mo 5 Si 3 additions to MoSi 2 tended to be detrimental for the mechanical and oxidative properties

  19. Rediseño curricular con un enfoque basado en competencias de los planes y programas de estudio de los cursos de ascenso para tripulantes de la especialidad Electricidad y sus experiencias de la escuela de superficie de la Fuerza Naval del Ecuador

    OpenAIRE

    Cestonaro Salazar, Blanca María

    2010-01-01

    TEXTO COMPLETO La vida del militar le impone una dualidad, ya que debe estar eficientemente preparado para cumplir con sus funciones tanto en época de paz como en situaciones de guerra. Para estar acorde con las demandas de la tecnología debe capacitarse constantemente y una manera de lograr uniformidad en el conocimiento se obtiene en la certificación de competencias. Si deseamos llegar a una gestión por competencias a nivel de Fuerza Naval, es aconsejable establecer un sistema educati...

  20. Evolution of a novel Si-18Mn-16Ti-11P alloy in Al-Si melt and its influence on microstructure and properties of high-Si Al-Si alloy

    Directory of Open Access Journals (Sweden)

    Xiao-Lu Zhou

    Full Text Available A novel Si-18Mn-16Ti-11P master alloy has been developed to refine primary Si to 14.7 ± 1.3 μm, distributed uniformly in Al-27Si alloy. Comparing with traditional Cu-14P and Al-3P, Si-18Mn-16Ti-11P provided a much better refining effect, with in-situ highly active AlP. The refined Al-27Si alloy exhibited a CTE of 16.25 × 10−6/K which is slightly higher than that of Sip/Al composites fabricated by spray deposition. The UTS and elongation of refined Al-27Si alloy were increased by 106% and 235% comparing with those of unrefined alloy. It indicates that the novel Si-18Mn-16Ti-11P alloy is more suitable for high-Si Al-Si alloys and may be a candidate for refining hypereutectic Al-Si alloy for electronic packaging applications. Moreover, studies showed that TiP is the only P-containing phase in Si-18Mn-16Ti-11P master alloy. A core-shell reaction model was established to reveal mechanism of the transformation of TiP to AlP in Al-Si melts. The transformation is a liquid-solid diffusion reaction driven by chemical potential difference and the reaction rate is controlled by diffusion. It means sufficient holding time is necessary for Si-18Mn-16Ti-11P master alloy to achieve better refining effect. Keywords: Hypereutectic Al-Si alloy, Primary Si, Refinement, AlP, Thermal expansion behavior, Si-18Mn-16Ti-11P master alloy

  1. Oblique roughness replication in strained SiGe/Si multilayers

    NARCIS (Netherlands)

    Holy, V.; Darhuber, A.A.; Stangl, J.; Bauer, G.; Nützel, J.-F.; Abstreiter, G.

    1998-01-01

    The replication of the interface roughness in SiGe/Si multilayers grown on miscut Si(001) substrates has been studied by means of x-ray reflectivity reciprocal space mapping. The interface profiles were found to be highly correlated and the direction of the maximal replication was inclined with

  2. Transformation mechanism of n-butyl terminated Si nanoparticles embedded into Si1-xCx nanocomposites mixed with Si nanoparticles and C atoms

    International Nuclear Information System (INIS)

    Shin, J.W.; Oh, D.H.; Kim, T.W.; Cho, W.J.

    2009-01-01

    Bright-field transmission electron microscopy (TEM) images, high-resolution TEM (HRTEM) images, and fast-Fourier transformed electron-diffraction patterns showed that n-butyl terminated Si nanoparticles were aggregated. The formation of Si 1-x C x nanocomposites was mixed with Si nanoparticles and C atoms embedded in a SiO 2 layer due to the diffusion of C atoms from n-butyl termination shells into aggregated Si nanoparticles. Atomic force microscopy (AFM) images showed that the Si 1-x C x nanocomposites mixed with Si nanoparticles and C atoms existed in almost all regions of the SiO 2 layer. The formation mechanism of Si nanoparticles and the transformation mechanism of n-butyl terminated Si nanoparticles embedded into Si 1-x C x nanocomposites mixed with Si nanoparticles and C atoms are described on the basis of the TEM, HRTEM, and AFM results. These results can help to improve the understanding of the formation mechanism of Si nanoparticles.

  3. Positron annihilation at the Si/SiO2 interface

    International Nuclear Information System (INIS)

    Leung, T.C.; Weinberg, Z.A.; Asoka-Kumar, P.; Nielsen, B.; Rubloff, G.W.; Lynn, K.G.

    1992-01-01

    Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO 2 interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (S int ) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that S int depends directly on holes at interface states or traps at the Si/SiO 2 interface

  4. Pressureless sintering of dense Si3N4 and Si3N4/SiC composites with nitrate additives

    International Nuclear Information System (INIS)

    Kim, J.Y.; Iseki, Takayoshi; Yano, Toyohiko

    1996-01-01

    The effect of aluminum and yttrium nitrate additives on the densification of monolithic Si 3 N 4 and a Si 3 N 4 /SiC composite by pressureless sintering was compared with that of oxide additives. The surfaces of Si 3 N 4 particles milled with aluminum and yttrium nitrates, which were added as methanol solutions, were coated with a different layer containing Al and Y from that of Si 3 N 4 particles milled with oxide additives. Monolithic Si 3 N 4 could be sintered to 94% of theoretical density (TD) at 1,500 C with nitrate additives. The sintering temperature was about 100 C lower than the case with oxide additives. After pressureless sintering at 1,750 C for 2 h in N 2 , the bulk density of a Si 3 N 4 /20 wt% SiC composite reached 95% TD with nitrate additives

  5. Computed tomography in Brazil: frequency and pattern of usage among inpatients of the Unified Health System (SUS); Tomografia computadorizada no Brasil: frequencia e padrao de uso em pacientes internados no Sistema Unico de Saude (SUS)

    Energy Technology Data Exchange (ETDEWEB)

    Dovales, Ana Cristina M.; Souza, Andressa A. de; Veiga, Lene H.S., E-mail: adovales@ird.gov.br [Instituto de Radioprotecao e Dosimetria (IRD/CNEN-RJ), Rio de Janeiro, RJ (Brazil)

    2015-04-15

    This paper shows the frequency, pattern and trend of computed tomography use in inpatients of the Brazilian public health care system (SUS), from 2008 to 2011. Data were extracted from an Internet database provided by SUS. Head/neck examinations were the most frequent type of CT over the study period. The use of CT increased over time, with the greatest increase being observed for CT of extremities. (author)

  6. VISIÓN ESTRATÉGICA DE LA INDUSTRIA MINERA DE HIERRO Y EL ACERO DE VENEZUELA

    Directory of Open Access Journals (Sweden)

    Juan Enrique Villalva A.

    2016-04-01

    Full Text Available El propósito de este estudio fue primero, determinar el resultado de la visión estratégica aplicada a industria minera de hierro y el acero de Venezuela y segundo, la construcción de la visión estratégica de estas industrias de acuerdo a las actuales realidades. Para ello, primero se revisó la evolución de la visión estratégica de ambas industrias y sus resultados. Segundo, se revisó la situación actual, identificando las principales características del entorno externo e interno, sus capacidades, limitaciones y situación económico – financiera, que afectan sus opciones y oportunidades estratégicas. El estudio concluye que ambas industrias han presentado resultados precarios desde 2006, en cuanto a producción, productividad, tasa de uso de la capacidad instalada y margen de utilidad, producto de un cambio radical en la visión estratégica. Finalmente se obtienen los lineamientos de la visión estratégica, como imagen a futuro de ambas industrias, como un aporte para mejorar estas importantes industrias.

  7. Chemical vapor deposition of Si/SiC nano-multilayer thin films

    International Nuclear Information System (INIS)

    Weber, A.; Remfort, R.; Woehrl, N.; Assenmacher, W.; Schulz, S.

    2015-01-01

    Stoichiometric SiC films were deposited with the commercially available single source precursor Et_3SiH by classical thermal chemical vapor deposition (CVD) as well as plasma-enhanced CVD at low temperatures in the absence of any other reactive gases. Temperature-variable deposition studies revealed that polycrystalline films containing different SiC polytypes with a Si to carbon ratio of close to 1:1 are formed at 1000 °C in thermal CVD process and below 100 °C in the plasma-enhanced CVD process. The plasma enhanced CVD process enables the reduction of residual stress in the deposited films and offers the deposition on temperature sensitive substrates in the future. In both deposition processes the film thickness can be controlled by variation of the process parameters such as the substrate temperature and the deposition time. The resulting material films were characterized with respect to their chemical composition and their crystallinity using scanning electron microscope, energy dispersive X-ray spectroscopy (XRD), atomic force microscopy, X-ray diffraction, grazing incidence X-ray diffraction, secondary ion mass spectrometry and Raman spectroscopy. Finally, Si/SiC multilayers of up to 10 individual layers of equal thickness (about 450 nm) were deposited at 1000 °C using Et_3SiH and SiH_4. The resulting multilayers features amorphous SiC films alternating with Si films, which feature larger crystals up to 300 nm size as measured by transmission electron microscopy as well as by XRD. XRD features three distinct peaks for Si(111), Si(220) and Si(311). - Highlights: • Stoichiometric silicon carbide films were deposited from a single source precursor. • Thermal as well as plasma-enhanced chemical vapor deposition was used. • Films morphology, crystallinity and chemical composition were characterized. • Silicon/silicon carbide multilayers of up to 10 individual nano-layers were deposited.

  8. Formation of metallic Si and SiC nanoparticles from SiO2 particles by plasma-induced cathodic discharge electrolysis in chloride melt

    International Nuclear Information System (INIS)

    Tokushige, M.; Tsujimura, H.; Nishikiori, T.; Ito, Y.

    2013-01-01

    Silicon nanoparticles are formed from SiO 2 particles by conducting plasma-induced cathodic discharge electrolysis. In a LiCl–KCl melt in which SiO 2 particles were suspended at 450 °C, we obtained Si nanoparticles with diameters around 20 nm. During the electrolysis period, SiO 2 particles are directly reduced by discharge electrons on the surface of the melt just under the discharge, and the deposited Si atom clusters form Si nanoparticles, which leave the surface of the original SiO 2 particle due to free spaces caused by a molar volume difference between SiO 2 and Si. We also found that SiC nanoparticles can be obtained using carbon anode. Based on Faraday's law, the current efficiency for the formation of Si nanoparticles is 70%

  9. Formation of Si/Ge/Si heterostructures with quantum dots

    International Nuclear Information System (INIS)

    Zinov'ev, V.A.; Dvurechenskij, A.V.; Novikov, P.L.

    2003-01-01

    It is present the Monte Carlo simulation of epitaxial embedding of faceted three-dimensional Ge islands (quantum dots) in a Si matrix. Under a Si flux these islands expand and undergo a shape change (from pyramidal to drop-like shape). The main expansion occurs at initial stage of embedding in Si (deposition of 1-2 monolayers). This change is controlled by surface diffusion. The shape of island can be preserved when one uses the higher Si fluxes. The reason of island conservation lies in blocking of Ge surface diffusion [ru

  10. Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions

    International Nuclear Information System (INIS)

    Lindner, J.K.N.; Wenzel, S.; Stritzker, B.

    2001-01-01

    The formation of metal silicide layers contacting an ion beam synthesized buried 3C-SiC layer in silicon by means of high-dose titanium and molybdenum implantations is reported. Two different strategies to form such contact layers are explored. The titanium implantation aims to convert the Si top layer of an epitaxial Si/SiC/Si layer sequence into TiSi 2 , while Mo implantations were performed directly into the SiC layer after selectively etching off all capping layers. Textured and high-temperature stable C54-TiSi 2 layers with small additions of more metal-rich silicides are obtained in the case of the Ti implantations. Mo implantations result in the formation of the high-temperature phase β-MoSi 2 , which also grows textured on the substrate. The formation of cavities in the silicon substrate at the lower SiC/Si interface due to the Si consumption by the growing silicide phase is observed in both cases. It probably constitutes a problem, occurring whenever thin SiC films on silicon have to be contacted by silicide forming metals independent of the deposition technique used. It is shown that this problem can be solved with ion beam synthesized contact layers by proper adjustment of the metal ion dose

  11. Effects of atomic hydrogen on the selective area growth of Si and Si1-xGex thin films on Si and SiO2 surfaces: Inhibition, nucleation, and growth

    International Nuclear Information System (INIS)

    Schroeder, T.W.; Lam, A.M.; Ma, P.F.; Engstrom, J.R.

    2004-01-01

    Supersonic molecular beam techniques have been used to study the nucleation of Si and Si 1-x Ge x thin films on Si and SiO 2 surfaces, where Si 2 H 6 and GeH 4 have been used as sources. A particular emphasis of this study has been an examination of the effects of a coincident flux of atomic hydrogen. The time associated with formation of stable islands of Si or Si 1-x Ge x on SiO 2 surfaces--the incubation time--has been found to depend strongly on the kinetic energy of the incident molecular precursors (Si 2 H 6 and GeH 4 ) and the substrate temperature. After coalescence, thin film morphology has been found to depend primarily on substrate temperature, with smoother films being grown at substrate temperatures below 600 deg. C. Introduction of a coincident flux of atomic hydrogen has a large effect on the nucleation and growth process. First, the incubation time in the presence of atomic hydrogen has been found to increase, especially at substrate temperatures below 630 deg. C, suggesting that hydrogen atoms adsorbed on Si-like sites on SiO 2 can effectively block nucleation of Si. Unfortunately, in terms of promoting selective area growth, coincident atomic hydrogen also decreases the rate of epitaxial growth rate, essentially offsetting any increase in the incubation time for growth on SiO 2 . Concerning Si 1-x Ge x growth, the introduction of GeH 4 produces substantial changes in both thin film morphology and the rate nucleation of poly-Si 1-x Ge x on SiO 2 . Briefly, the addition of Ge increases the incubation time, while it lessens the effect of coincident hydrogen on the incubation time. Finally, a comparison of the maximum island density, the time to reach this density, and the steady-state polycrystalline growth rate strongly suggests that all thin films [Si, Si 1-x Ge x , both with and without H(g)] nucleate at special sites on the SiO 2 surface, and grow primarily via direct deposition of adatoms on pre-existing islands

  12. Anomalous defect processes in Si implanted amorphous SiO2, II

    International Nuclear Information System (INIS)

    Fujita, Tetsuo; Fukui, Minoru; Okada, Syunji; Shimizu-Iwayama, Tsutomu; Hioki, Tatsumi; Itoh, Noriaki

    1994-01-01

    Aanomalous features of the defects in Si implanted amorphous SiO 2 are reported. The numbers of E 1 prime centers and B 2 centers are found to increase monotonically with implanted Si dose, in contrast to the saturating feature of these numbers in Ar implanted samples. Moreover, when H ions are implanted in amorphous SiO 2 predamaged by Si implantation, both of the density and the number of E 1 prime centers increase and they reach a constant value at a small H dose. We point out that these anomalies can be explained in terms of the difference in the cross-section for defect annihilation in the specimens implanted with Si ions and other ions, in accordance with the homogeneous model proposed by Devine and Golanski. We consider that the main mechanism of defect annihilation is the recombination of an E 1 prime center and an interstitial O, which is stabilized by an implanted Si, reducing the cross-section in Si-implanted specimens. ((orig.))

  13. Structural and electrical evaluation for strained Si/SiGe on insulator

    International Nuclear Information System (INIS)

    Wang Dong; Ii, Seiichiro; Ikeda, Ken-ichi; Nakashima, Hideharu; Ninomiya, Masaharu; Nakamae, Masahiko; Nakashima, Hiroshi

    2006-01-01

    Three strained Si/SiGe on insulator wafers having different Ge fractions were evaluated using dual-metal-oxide-semiconductor (dual-MOS) deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) methods. The interface of SiGe/buried oxide (BOX) shows roughness less than 1 nm by high resolution TEM observation. The interface states densities (D it ) of SiGe/BOX are approximately 1 x 10 12 cm -2 eV -1 , which is approximately one order of magnitude higher than that of Si/BOX in a Si on insulator wafer measured as reference by the same method of dual-MOS DLTS. The high D it of SiGe/BOX is not due to interface roughness but due to Ge atoms. The threading dislocations were also clearly observed by TEM and were analyzed

  14. Docentes de inglés de primaria, secundaria y terciaria: Sus creencias pedagógicas sobre sus estudiantes

    Directory of Open Access Journals (Sweden)

    Claudio Díaz-Larenas

    2015-01-01

    Full Text Available Como agente reflexivo de su propia práctica, el profesorado construye creencias pedagógicas sobre el proceso de enseñanza y aprendizaje y, en particular, sobre el rol que sus estudiantes deben asumir en el aprendizaje de un idioma. Este estudio tiene como objetivo identificar las creencias pedagógicas de treinta docentes de inglés de primaria, secundaria y terciaria, en Chile, sobre el rol estudiantil en el proceso didáctico. Un cuestionario, una entrevista semi-estructurada, un diario auto-biográfico y cinco diarios de observación no-participante fueron utilizados para revelar las creencias pedagógicas de sus informantes. Los datos arrojados por los instrumentos fueron analizados con el programa cualitativo ATLASTI, que permitió el levantamiento de tres dimensiones y diez categorías, mediante el uso de la técnica del análisis de contenido semántico. Los resultados muestran que los tres grupos de profesorado declaran que estudiantes que aprenden una lengua extranjera deben tener características personales y académicas relacionadas con la motivación, la participación, la autonomía, entre otras; sin embargo, al interior del aula asumen un rol pasivo y reactivo frente al ambiente de enseñanza altamente estructurado que genera el personal docente. En conclusión, las creencias que cada docente sostiene se alimentan de la teoría y se corroboran o cuestionan en la práctica de aula, a modo de una relación bidireccional entre teoría y práctica, y viceversa.

  15. Escolhas Associadas ao Automóvel por Homens e por Mulheres: confluência ou divergência? Choices associated with automobiles for Men and Women: convergence or divergence? Opciones relacionadas con el Automóvil por Hombres y por Mujeres: ¿convergencia o divergencia?

    Directory of Open Access Journals (Sweden)

    LICHT, René Henrique Götz

    2009-03-01

    revealed there are more similarities than differences between choices associated to the automobile by men and choices associated to the automobile by women. The similarity between the choices suggests that the representations, the meanings and values assigned to the car by men and women are similar and thus the strategy of product differentiation does not apply to the automotive industry.RESUMENEl aumento del poder de compra de las mujeres llevó a las empresas a adoptar estrategias de diferenciación de los productos y a producir productos específicos para el público femenino. La industria automovilística no es inmune a este fenómeno, pues las mujeres concentran aproximadamente la mitad de las ventas de automóviles en el país. Considerando las diferencias de consumo e de comportamiento entre mujeres y hombres se plantea la siguiente cuestión: ¿hay diferencias en las opciones relacionadas con el automóvil entre hombres y mujeres? Se presentaron ante los participantes algunos ítems que forman parte de la vida diaria de las personas y que ellas valorizan; se solicitó a los participantes que escogiesen y asociasen estos ítems al automóvil. El análisis de los resultados reveló que había más similitudes que diferencias entre las opciones relacionadas con el automóvil por parte de los hombres y las opciones relacionadas al automóvil por parte de las mujeres. La similitud entre las opciones indica que las representaciones, los significados y valores atribuidos al automóvil por hombres y mujeres son similares y por lo tanto, la estrategia de diferenciación de productos no se aplica a la industria automovilística.

  16. Effect of Ti and Si interlayer materials on the joining of SiC ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Yang Il; Park, Jung Hwan; Kim, Hyun Gil; Park, Dong Jun; Park, Jeong Yong; Kim, Weon Ju [LWR Fuel Technology Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-08-15

    SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ∼0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ∼100 MPa. The joint interface consisted of TiSi{sub 2}, Ti{sub 3}SiC{sub 2}, and SiC phases formed by a diffusion reaction of Ti and Si.

  17. On the line intensity ratios of prominent Si II, Si III, and Si IV multiplets

    International Nuclear Information System (INIS)

    Djenize, S.; Sreckovic, A.; Bukvic, S.

    2010-01-01

    Line intensities of singly, doubly and triply ionized silicon (Si II, Si III, and Si IV, respectively) belonging to the prominent higher multiplets, are of interest in laboratory and astrophysical plasma diagnostics. We measured these line intensities in the emission spectra of pulsed helium discharge. The Si II line intensity ratios in the 3s3p 22 D-3s 2 4p 2 P o , 3s 2 3d 2 D-3s 2 4f 2 F o , and 3s 2 4p 2 P o -3s 2 4d 2 D transitions, the Si III line intensity ratios in the 3s3d 3 D-3s4p 3 P o , 3s4p 3 P o -3s4d 3 D, 3s4p 3 P o -3s5s 3 S, 3s4s 3 S-3s4p 3 P o , and 3s4f 3 F o -3s5g 3 G transitions, and the Si IV line intensity ratios in the 4p 2 P o -4d 2 D and 4p 2 P o -5s 2 S transitions were obtained in a helium plasma at an electron temperature of about 17,000 ± 2000 K. Line shapes were recorded using a spectrograph and an ICCD camera as a highly-sensitive detection system. The silicon atoms were evaporated from a Pyrex discharge tube designed for the purpose. They represent impurities in the optically thin helium plasma at the silicon ionic wavelengths investigated. The line intensity ratios obtained were compared with those available in the literature, and with values calculated on the basis of available transition probabilities. The experimental data corresponded well with line intensity ratios calculated using the transition probabilities obtained from a Multi Configuration Hartree-Fock approximation for Si III and Si IV spectra. We recommend corrections of some Si II transition probabilities.

  18. Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

    Science.gov (United States)

    Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

    2013-05-01

    We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

  19. El olivar andaluz y sus transformaciones recientes

    Directory of Open Access Journals (Sweden)

    Sánchez Martínez, José Domingo

    2011-06-01

    Full Text Available The olive grove in Andalusia suffered critical moments during the 20th century, and it was considered like a «culture problem» in the decades preceding the incorporation of Spain in the current European Union. Since then olive grove has known an exceptional economic conjuncture, like express his enormous superficial expansion or his notable productivity. In this work we approach the reasons that explain the consolidation of one of the most typical monocultures of southern Spain, indicating the diversity of situations that coexist under a seemingly monotonous landscape and analyzing some cases that can well illustrate the set of changes experienced since 1986.

    El olivar andaluz sufrió momentos críticos a lo largo del siglo XX, hasta el punto de ser considerado como un «cultivo problema» durante las décadas que precedieron a la incorporación de España en la actual Unión Europea. Desde entonces ha conocido una coyuntura económica excepcional, como atestiguan su enorme expansión superficial y el notable incremento de sus rendimientos. En este trabajo nos acercamos a las causas que explican la consolidación de uno de los monocultivos más característicos del sur peninsular, señalando la diversidad de situaciones que conviven bajo un paisaje aparentemente monótono y analizando algunos casos que pueden ilustrar bien el conjunto de cambios experimentados desde 1986. [fr] La culture de l’olivier andalou a connu des moments critiques tout au long du XXème siècle, au point d’être considérée comme une «culture problème» pendant les décennies qui ont précédé l’entrée de l’Espagne dans l’Union européenne. Dès lors, l’oliveraie a vécu une conjoncture économique exceptionnelle, sa forte expansion superficielle et l’augmentation remarquable de ses rendements en sont témoins. Cet article explique les causes de la consolidation d’une des monocultures les plus caractéristiques du sud de la péninsule Ib

  20. Televisión educativa y desastres naturales: estudiantes chilenos y sus profesoras valoran uso del video educativo en el aula

    Directory of Open Access Journals (Sweden)

    Rodríguez Malebrán, Carolina

    2016-05-01

    Full Text Available El uso del video educativo como recurso didáctico ha permitido complementar el aprendizaje del estudiantado y apoyar el trabajo de los y las docentes. Si bien, en internet existen numerosos sitios especializados con videos educativos que pueden ser utilizados por los profesores y las profesoras en sus clases, la gran mayoría de estos recursos no han sido valorados por su principal público: estudiantes y docentes. El presente artículo describe la valoración que estudiantes de sexto año básico de la escuela pública David León Tapia, de la localidad de Tongoy en Chile, realizaron del video educativo “Benvoy y las hormigas”, que busca apoyar el aprendizaje del alumnado sobre los desastres naturales, sus causas, consecuencias y prevención. Para ello se solicitó a 27 alumnos y alumnas que contestaran una encuesta, luego de haber observado el video educativo dentro de su sala de clases, posteriormente se aplicaron entrevistas semiestructuradas a las docentes del curso. Se les consultó por preferencias de contenidos, tipos de recursos para el aprendizaje y relación con su entorno. Podemos concluir que la mayoría de los y las estudiantes que participaron en la encuesta indicaron que el video “Benvoy y las hormigas” les había ayudado a comprender los desastres naturales, calificándolo positivamente. Sobre los contenidos, los y las escolares mostraron preferencia por los capítulos sobre la prevención y normas de seguridad que se deben tomar ante desastres naturales y, en segundo lugar, las causas y consecuencias de los tsunamis. Las docentes, por su parte, destacaron la trama y la relación de los personajes con la vida cotidiana de los estudiantes.

  1. Ni-Si oxide as an inducing crystallization source for making poly-Si

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Zhiguo; Liu, Zhaojun; Li, Juan; Wu, Chunya; Xiong, Shaozhen [Institute of Photo-electronics, Nankai University, Tianjin (China); Zhao, Shuyun; Wong, Man; Kwok, Hoi Sing [Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong (China)

    2010-04-15

    Nickel silicon oxide mixture was sputtered on a-Si with Ni-Si alloy target with Ni:Si weight ratio of 1:9 and used as a new inducing source for metal induced lateral crystallization (MILC). The characteristics of the resulted poly-Si materials induced by Ni-Si oxide with different thickness were nearly the same. This means the metal induced crystallization with this new inducing source has wide processing tolerance to make MILC poly-Si. Besides, it reduced the residual Ni content in the resulted poly-Si film. The transfer characteristic curve of poly-Si TFT and a TFT-OLED display demo made with this kind of new inducing source were also presented in this paper. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Alpha-particle irradiation induced defects in SiO2 films of Si-SiO2 structures

    International Nuclear Information System (INIS)

    Koman, B.P.; Gal'chynskyy, O.V.; Kovalyuk, R.O.; Shkol'nyy, A.K.

    1996-01-01

    The aim of the work was to investigate alpha-particle irradiation induced defects in Si-SiO 2 structures by means of the thermostimulated discharge currents (TSDC) analysis. The object of investigation were (p-Si)-SiO 2 structures formed by a combined oxidation of the industrial p-Si wafers in dry and wet oxygen at temperature of 1150 C. The TSD currents were investigated in the temperature range between 90 and 500 K under linear heating rate. Pu 238 isotopes were the source of alpha-particles with an energy of 4-5 MeV and a density of 5.10 7 s -1 cm -2 . The TSD current curves show two peculiar maxima at about 370 and 480 K. Alpha-particle irradiation doesn't affect the general shape of the TSDC curves but leads to a shift of the maximum at 370 K and reduces the total electret charge which is accumulated in the Si-SiO 2 structures during polarization. The energy distribution function of the defects which are involved in SiO 2 polarization has been calculated. It showes that defects with activation energies of about 0.8 and 1.0 eV take part in forming the electret state, and these activation energies have certain energy distributions. It has been found that the TSDC maximum at 370 K has space charge nature and is caused by migration of hydrogen ions. In irradiated samples hydrogen and natrium ions localize on deeper trapping centres induced by alpha-particle irradiation. (orig.)

  3. La violencia de hijos adolescentes contra sus progenitores La violencia de hijos adolescentes contra sus progenitores

    Directory of Open Access Journals (Sweden)

    Concepción Aroca Montolío

    2013-10-01

    Full Text Available According to Prosecutor’s Office of the Minor, the accusation interposed by mothers and/or fathers victims by theirs children, along 2007 were 2603, in 2008 amounted 4.211, in 2009 there were 5.209 and in 2010 there were 8.000 accusations. Suede this worrying increase, the principal aim of our article is to check the scientific international and national documentation, from 1957 until the year 2010 that analyses the phenomenon of the adolescent violence against parents, to achieve an approximation to its keys that there allows us the comprehension and analysis of this serious familiar problem. For it we will analyse: (a the importance of this crime by means of criminological mediators: prevalence and incidence; (b the age and sex variables’ aggressors to be able to establish a basic profile about theirs and, (c the violence types that the teenagers wield to damage, prejudice and suffering against their progenitors, with the aim to obtain what they want. The information obtained in this research review and qualitative analysis, change in base to the methodology used and the type of sample under study to obtain conclusions. Even though, we wantto do research into needs to investigate this type of familiar violence, and from there, to do researches with rigorous scientific methodologies, unifying criteria and variables to be investigating, to be able to anticipate in this increasing problem that the parents have. Según la Fiscalía del Menor en el año 2007, las denuncias interpuestas por madres y/o padres, víctimas de malos tratos por sus hijos e hijas menores de edad, fueron 2.683. En 2008 ascendieron a 4.211, en 2009 se presentaron 5.209 y en el año 2010 se registraron 8.000 denuncias. Ante éste preocupante incremento, el objetivo principal de nuestro artículo es revisar la documentación científica que analiza la violencia filio-parental,  desde 1957 hasta el año 2011, para lograr una aproximación a sus claves que nos permita la

  4. Software efical para la gestión eficiente de motores en la industria; Software Efical for Efficient Management of Motors in the Industry

    Directory of Open Access Journals (Sweden)

    Elías V de la Rosa Masdueño

    2011-02-01

    Full Text Available En este trabajo se explica el diseño, e implementación de una herramienta capaz de controlar y gestionareficientemente los motores eléctricos de una industria. Para ello se elaboró un software de fácil manejoque resolviera el problema y que además brindara otras opciones a los usuarios que hicieran uso delmismo. EFICAL®, controla el inventario de los motores y sus equipos accionados, sus parámetrosnominales, mantenimientos y ensayos, permite calcular la eficiencia por distintos métodos y brinda ademásdatos de catálogos de diversos fabricantes.  This work explains the developing and application of a software tool for efficient management of electricmotors in the industry. For this it was develop friendly software that solve the problem and more over givesanother option to users. EFICAL®, controls the motor inventory and the equipment that they drive, theirnominal parameters, maintenance, and testing; also allow the efficiency calculations by various methodsand gives the catalog data of some manufacturers.

  5. Análisis de la información que publica la Bolsa Mexicana de Valores: el caso de las empresas listadas en el mercado mexicano de derivados

    Directory of Open Access Journals (Sweden)

    Juan Fernando Guerrero Herrera

    2016-02-01

    Full Text Available Este trabajo presenta un análisis de la información publicada por la Bolsa Mexicana de valores (bmv respecto de las principales empresas listadas, así como de la información publicada por las propias empresas en sus respectivas páginas Web. El estudio incluye a las diez empresas más importantes que cotizan en la bmv. Entre dichas empresas se encuentran las que están listadas en el Mercado Mexicano de derivados (Mexder, es decir, empresas cuyas acciones son activos subyacentes para contratos de instrumentos financieros derivados. La información proporcionada es importante y de gran utilidad para inversionistas, analistas financieros y público en general, ya que contribuye al proceso de fijación de precios de activos financieros que son subyacentes en el Mexder. el presente análisis incluye cuadros con los contratos listados en el Mexder, tanto de futuros como de opciones, así como sus características principales. Asimismo, incluye tablas que muestran los volúmenes que actualmente operan los contratos e instrumentos referidos.

  6. Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

    Science.gov (United States)

    George, T.; Fathauer, R. W.

    1992-01-01

    The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

  7. Hybrid Integrated Si/SiN Platforms for Wideband Optical Processing

    Science.gov (United States)

    2017-05-08

    annealing process, makes the process prone to dopant redistribution, that hinderers the SiN deposition after full Si device fabrication. To resolve...with 220 nm of crystalline Si. In parallel, a Si die goes through a wet oxidation process to grow 5 μm of thermal oxide. In the next step, 400 nm of... annealing methods. As a figure of merit in hydrophilic bonding, we monitored the surface roughness and bonding strength of a thin oxide layer to

  8. Los consejos escolares de los colegios de educación primaria analizados por sus miembros

    Directory of Open Access Journals (Sweden)

    José Fernando González Granda

    2004-01-01

    Full Text Available En este trabajo presentamos la valoración que de los consejos escolares de los colegios de educación primaria de la Comunidad Autónoma de Asturias realizan sus miembros. Se analizan las principales características de los consejeros así como la información y atención que éstos prestan a sus representados. Se valora el funcionamiento de los consejos y cómo cumplen éstos las competencias que tienen asignadas. También recogemos la valoración que los consejeros realizan de los problemas que tienen en el cumplimiento de sus tareas. Los consejeros valoran cómo los consejos mejoran el funcionamiento de los colegios y diversos aspectos relacionados con la participación, asi como la satisfacción de los distintos miembros de la comunidad escolar respecto al funcionamiento de los consejos escolares.

  9. [Methodology for construction of a panel of indicators for monitoring and evaluation of unified health system (SUS) management].

    Science.gov (United States)

    Tamaki, Edson Mamoru; Tanaka, Oswaldo Yoshimi; Felisberto, Eronildo; Alves, Cinthia Kalyne de Almeida; Drumond Junior, Marcos; Bezerra, Luciana Caroline de Albuquerque; Calvo, Maria Cristina Marino; Miranda, Alcides Silva de

    2012-04-01

    This study sought to develop methodology for the construction of a Panel for the Monitoring and Evaluation of Management of the Unified Health System (SUS). The participative process used in addition to the systematization conducted made it possible to identify an effective strategy for building management tools in partnership with researchers, academic institutions and managers of the SUS. The final systematization of the Panel selected indicators for the management of the SUS in terms of Demand, Inputs, Processes, Outputs and Outcomes in order to provide a simple, versatile and useful tool for evaluation at any level of management and more transparent and easier communication with all stakeholders in decision-making. Taking the management of the SUS as the scope of these processes and practices in all normative aspects enabled dialog between systemic theories and those which consider the centrality of the social actor in the decision-making process.

  10. Sucesos estresantes y sus impactos en mujeres y jóvenes de la comunidad de cuitzeo, Michoacán: El ciclo de la migración México-EUA en sus familias

    Directory of Open Access Journals (Sweden)

    Nydia Obregón-Velasco

    Full Text Available El presente trabajo describe algunos sucesos de vida estresantes y los impactos que tienen en la salud de las mujeres y sus hijos jóvenes, a partir de la migración hacia EUA de algunos de sus familiares directos, lo cual favorece el ciclo de migración en la familia. Se utilizó la metodología cualitativa con un enfoque de participación-acción, aplicando grupos focales, entrevistas y observación participante durante diferentes actividades realizadas en la comunidad de Cuitzeo, Michoacán, tales como conferencias y talleres.

  11. Formation mechanism of SiC in C-Si system by ion irradiation

    International Nuclear Information System (INIS)

    Hishita, Shunichi; Aizawa, Takashi; Suehara, Shigeru; Haneda, Hajime

    2003-01-01

    The irradiation effects of 2 MeV He + , Ne + , and Ar + ions on the film structure of the C-Si system were investigated with RHEED and XPS. The ion dose dependence of the SiC formation was kinetically analyzed. The SiC formation at moderate temperature was achieved by 2 MeV ion irradiation when the thickness of the initial carbon films was appropriate. The evolution process of the SiC film thickness consisted of the 3 stages. The first stage was the steep increase of the SiC, and was governed by the inelastic collision. The second was the gentle increase of the SiC, and was governed by the diffusion. The last was the decrease of the SiC, and was caused by the sputtering. The formation mechanism of the SiC was discussed. (author)

  12. Silicon Effects on Properties of Melt Infiltrated SiC/SiC Composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Gyekenyesi, John Z.; Hurst, Janet B.

    2000-01-01

    Silicon effects on tensile and creep properties, and thermal conductivity of Hi-Nicalon SiC/SiC composites have been investigated. The composites consist of 8 layers of 5HS 2-D woven preforms of BN/SiC coated Hi-Nicalon fiber mats and a silicon matrix, or a mixture of silicon matrix and SiC particles. The Hi-Nicalon SiC/silicon and Hi-Nicalon SiC/SiC composites contained about 24 and 13 vol% silicon, respectively. Results indicate residual silicon up to 24 vol% has no significant effect on creep and thermal conductivity, but does decrease the primary elastic modulus and stress corresponding to deviation from linear stress-strain behavior.

  13. Simulation of electron transmittance and tunnel current in n{sup +} Poly-Si/HfSiO{sub x}N/Trap/SiO{sub 2}/Si(100) capacitors using analytical and numerical approaches

    Energy Technology Data Exchange (ETDEWEB)

    Noor, Fatimah A., E-mail: fatimah@fi.itb.ac.id; Iskandar, Ferry; Abdullah, Mikrajuddin; Khairurrijal [Physics of Electronic Materials Research Division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jalan Ganesa 10, Bandung 40132 (Indonesia)

    2015-04-16

    In this paper, we discuss the electron transmittance and tunneling current in high-k-based-MOS capacitors with trapping charge by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies represented by an electron velocity in the gate. The HfSiO{sub x}N/SiO{sub 2} dual ultrathin layer is used as the gate oxide in an n{sup +} poly- Si/oxide/Si capacitor to replace SiO{sub 2}. The main problem of using HfSiO{sub x}N is the charge trapping formed at the HfSiO{sub x}N/SiO{sub 2} interface that can influence the performance of the device. Therefore, it is important to develop a model taking into account the presence of electron traps at the HfSiO{sub x}N/SiO{sub 2} interface in the electron transmittance and tunneling current. The transmittance and tunneling current in n{sup +} poly- Si/HfSiO{sub x}N/trap/SiO2/Si(100) capacitors are calculated by using Airy wavefunctions and a transfer matrix method (TMM) as analytical and numerical approaches, respectively. The transmittance and tunneling current obtained from the Airy wavefunction are compared to those computed by the TMM. The effects of the electron velocity on the transmittance and tunneling current are also discussed.

  14. Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results...... of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations...

  15. Effect of PECVD SiNx/SiOy Nx –Si interface property on surface passivation of silicon wafer

    International Nuclear Information System (INIS)

    Jia Xiao-Jie; Zhou Chun-Lan; Zhou Su; Wang Wen-Jing; Zhu Jun-Jie

    2016-01-01

    It is studied in this paper that the electrical characteristics of the interface between SiO y N x /SiN x stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiO y N x layer on interface parameters, such as interface state density Di t and fixed charge Q f , and the surface passivation quality of silicon are observed. Capacitance–voltage measurements reveal that inserting a thin SiO y N x layer between the SiN x and the silicon wafer can suppress Q f in the film and D it at the interface. The positive Q f and D it and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiO y N x film increasing. Prepared by deposition at a low temperature and a low ratio of N 2 O/SiH 4 flow rate, the SiO y N x /SiN x stacks result in a low effective surface recombination velocity (S eff ) of 6 cm/s on a p-type 1 Ω·cm–5 Ω·cm FZ silicon wafer. The positive relationship between S eff and D it suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. (paper)

  16. Adolescentes consumidores de televisión: autopercepciones sobre sus derechos

    Directory of Open Access Journals (Sweden)

    María Ángeles Espinosa Bayal

    2014-07-01

    Full Text Available El artículo analiza la percepción que tiene una muestra representativa de la población española de entre 12 y 18 años sobre la protección de sus derechos en las cadenas de televisión. Para conseguir este objetivo, se aplicó un cuestionario de 59 preguntas diseñado para una investigación más amplia en la que se analizaba la opinión de los menores sobre la protección de sus derechos en la televisión y en Internet. Ninguna pregunta del cuestionario se refería a cadenas o programas concretos identificados por los investigadores y la información sobre estos partía de la propia opinión de los adolescentes. Los resultados que se presentan se refieren a los datos sobre televisión y, más concretamente, al respeto por los derechos fundamentales de los telespectadores en general, y de los de los menores en particular. De estos resultados se concluye que los adolescentes perciben claramente la vulneración de los derechos de igualdad, dignidad e intimidad, a la información objetiva veraz y plural y a la libre expresión y opinión –especialmente cuando ésta se refiere a los niños–. Igualmente muestran una postura crítica y de rechazo hacia los tipos de programas que no respetan sus derechos. Se propone utilizar esta capacidad crítica de los telespectadores desde una doble perspectiva: por una parte para crear escuela de ciudadanía y, por otra, para generar una sociedad más justa y equitativa.

  17. Preparation and Characterization of SiO2/SiCN Core-shell Ceramic Microspheres

    Directory of Open Access Journals (Sweden)

    ZHANG Hai-yuan

    2017-05-01

    Full Text Available The SiO2/PSN core-shell microspheres were prepared via an emulsion reaction combined with the polymer-derived ceramics (PDCs method using polysilazane (PSN in situ polymerization on the surface of SiO2 modified by silane coupling agents MPS, followed by pyrolysis process to obtain SiO2/SiCN core-shell ceramic microspheres. The effects of raw mass ratio, curing time and pyrolysis temperature on the formation and the morphology of core-shell microspheres were studied. The morphology, chemical composition and phase transformation were characterized by SEM, EDS, TEM, FT-IR and XRD. The results show that after reaction for 4h at 200℃, SiO2 completely coated PSN forms a core-shell microsphere with rough surface when the mass ratio of SiO2 and PSN is 1:4; when pyrolysis temperature is at 800-1200℃, amorphous SiO2/SiCN core-shell ceramic microspheres are prepared; at 1400℃, the amorphous phase partially crystallizes to produce SiO2, SiC and Si3N4 phase.

  18. The Effect of Si Morphology on Machinability of Al-Si Alloys

    Directory of Open Access Journals (Sweden)

    Muhammet Uludağ

    2015-12-01

    Full Text Available Many of the cast parts require some sort of machining like milling, drilling to be used as a finished product. In order to improve the wear properties of Al alloys, Si is added. The solubility of Si in Al is quite low and it has a crystallite type structure. It behaves as particulate metal matrix composite which makes it an attractive element. Thus, the wear and machinability properties of these type of alloys depend on the morphology of Si in the matrix. In this work, Sr was added to alter the morphology of Si in Al-7Si and Al-12Si. Cylindrical shaped samples were cast and machinability characteristics of Sr addition was studied. The relationship between microstructure and machinability was evaluated.

  19. Diámetro del conducto cístico y coledocolitiasis secundaria Hospital Nacional Arzobispo Loayza 2015

    OpenAIRE

    Oré de la Cruz, Ronald Arnaldo

    2015-01-01

    Introducción: en pacientes con sospecha de colédocolitiasis secundaria entre otras opciones se puede plantear la realización de colangiografía intraoperatoria transcístico para hacer el diagnóstico. Algunos cirujanos optan por no hacer efectivo este procedimiento si consideran que el conducto cístico no está dilatado Objetivo: Conocer la relación entre el diámetro del conducto cístico y la colédocolitiasis secundaria en los pacientes intervenidos quirúrgicamente en el hospital nacional Arz...

  20. ¿Son realmente eficaces los programas de detección de talentos deportivos? Nuevos horizontes para su diseño

    OpenAIRE

    Lorenzo Calvo, Alberto; Jiménez Sáiz, Sergio Lorenzo; Lorenzo Calvo, Jorge

    2014-01-01

    Conseguir la excelencia en el deporte requiere grandes esfuerzos, recursos y tiempo. Cualquier pequeño avance que ayude a mejorar dicho proceso, que aumente las opciones de éxito de los distintos programas formativos, será de gran valor. ¿Qué es lo que provoca que un deportista si alcance los resultados esperados y otros no? ¿Qué factores favorecen el desarrollo del deportista? ¿Cómo diseñar el proceso de detección y desarrollo del talento? El presente artículo tiene como objetivo presentar e...

  1. Comparative study of anisotropic superconductivity in CaAlSi and CaGaSi

    International Nuclear Information System (INIS)

    Tamegai, T.; Uozato, K.; Kasahara, S.; Nakagawa, T.; Tokunaga, M.

    2005-01-01

    In order to get some insight into the origin of the anomalous angular dependence of H c2 in a layered intermetallic compound CaAlSi, electronic, superconducting, and structural properties are compared between CaAlSi and CaGaSi. The angular dependence of H c2 in CaGaSi is well described by the anisotropic GL model. Parallel to this finding, the pronounced lattice modulation accompanying the superstructure along the c-axis in CaAlSi is absent in CaGaSi. A relatively large specific heat jump at the superconducting transition in CaAlSi compared with CaGaSi indicates the presence of strong electron-phonon coupling in CaAlSi, which may cause the superstructure and the anomalous angular dependence of H c2

  2. SUS Brasil: a região de saúde como caminho

    Directory of Open Access Journals (Sweden)

    Lenir Santos

    2015-06-01

    Full Text Available O presente artigo desenvolve o tema da necessidade de se regionalizar a descentralização no sentido de aglutinar o que esta supostamente poderia ter fracionado. Ao revisitar a diretriz constitucional da descentralização os autores propõem medidas que visem sua garantia ao lado de ferramentas administrativas que permitam a formação de regiões de saúde resolutivas em pelo menos 95% das necessidades de saúde do território regional, para garantir autonomia sanitária. Os autores propõem soluções que passam pela criação de pessoas jurídicas associativas regionais, resultantes da aglutinação dos entes federativos em região de saúde. Apontam ainda o que não deu certo no Sistema Único de Saúde - SUS Brasil em razão tanto de equívocos originados nas melhores intenções, quanto do oportunismo que esses equívocos geraram. Advogam os autores a necessidade de respostas jurídico-administrativas para um SUS de caráter interfederativo tanto na sua gestão, que exige compartilhamentos, quanto no seu financiamento, que se mantém interdependente também. Concluem que o único caminho para o SUS ser nacional, é regionalizá-lo e dotar a região de saúde de todo o instrumental necessário à gestão compartilhada, interfederativa e responsável.

  3. Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

    Science.gov (United States)

    Tarasov, I. A.; Visotin, M. A.; Aleksandrovsky, A. S.; Kosyrev, N. N.; Yakovlev, I. A.; Molokeev, M. S.; Lukyanenko, A. V.; Krylov, A. S.; Fedorov, A. S.; Varnakov, S. N.; Ovchinnikov, S. G.

    2017-10-01

    This work investigates the Si/Fe flux ratio (2 and 0.34) influence on the growth of β-FeSi2 polycrystalline thin films on Si(100) substrate at 630 °C. Lattice deformations for the films obtained are confirmed by X-ray diffraction analysis (XRD). The volume unit cell deviation from that of β-FeSi2 single crystal are 1.99% and 1.1% for Si/Fe =2 and Si/Fe =0.34, respectively. Absorption measurements show that the indirect transition ( 0.704 eV) of the Si/Fe =0.34 sample changes to the direct transition with a bandgap value of 0.816 eV for the sample prepared at Si/Fe =2. The absorption spectrum of the Si/Fe =0.34 sample exhibits an additional peak located below the bandgap energy value with the absorption maximum of 0.36 eV. Surface magneto-optic Kerr effect (SMOKE) measurements detect the ferromagnetic behavior of the β-FeSi2 polycrystalline films grown at Si/Fe =0.34 at T=10 K, but no ferromagnetism was observed in the samples grown at Si/Fe =2. Theoretical calculations refute that the cell deformation can cause the emergence of magnetization and argue that the origin of the ferromagnetism, as well as the lower absorption peak, is β-FeSi2 stoichiometry deviations. Raman spectroscopy measurements evidence that the film obtained at Si/Fe flux ratio equal to 0.34 has the better crystallinity than the Si/Fe =2 sample.

  4. Improved thermal stability and hole mobilities in a strained-Si/strained-Si1-yGe y/strained-Si heterostructure grown on a relaxed Si1-xGe x buffer

    International Nuclear Information System (INIS)

    Gupta, Saurabh; Lee, Minjoo L.; Isaacson, David M.; Fitzgerald, Eugene A.

    2005-01-01

    A dual channel heterostructure consisting of strained-Si/strained-Si 1-y Ge y on relaxed Si 1-x Ge x (y > x), provides a platform for fabricating metal-oxide-semiconductor field-effect transistors (MOSFETs) with high hole mobilities (μ eff ) which depend directly on Ge concentration and strain in the strained-Si 1-y Ge y layer. Ge out-diffuses from the strained-Si 1-y Ge y layer into relaxed Si 1-x Ge x during high temperature processing, reducing peak Ge concentration and strain in the strained-Si 1-y Ge y layer and degrades hole μ eff in these dual channel heterostructures. A heterostructure consisting of strained-Si/strained-Si 1-y Ge y /strained-Si, referred to as a trilayer heterostructure, grown on relaxed Si 1-x Ge x has much reduced Ge out-flux from the strained-Si 1-y Ge y layer and retains higher μ eff after thermal processing. Improved hole μ eff over similar dual channel heterostructures is also observed in this heterostructure. This could be a result of preventing the hole wavefunction tunneling into the low μ eff relaxed Si 1-x Ge x layer due to the additional valence band offset provided by the underlying strained-Si layer. A diffusion coefficient has been formulated and implemented in a finite difference scheme for predicting the thermal budget of the strained SiGe heterostructures. It shows that the trilayer heterostructures have superior thermal budgets at higher Ge concentrations. Ring-shaped MOSFETs were fabricated on both platforms and subjected to various processing temperatures in order to compare the extent of μ eff reduction with thermal budget. Hole μ eff enhancements are retained to a much higher extent in a trilayer heterostructure after high temperature processing as compared to a dual channel heterostructure. The improved thermal stability and hole μ eff of a trilayer heterostructure makes it an ideal platform for fabricating high μ eff MOSFETs that can be processed over higher temperatures without significant losses in hole

  5. Rod-like β-FeSi2 phase grown on Si (111) substrate

    International Nuclear Information System (INIS)

    Han Ming; Tanaka, Miyoko; Takeguchi, Masaki; Furuya, Kazuo

    2004-01-01

    Pure Fe with coverage of 0.5-2.0 nm was deposited on Si (111) 7x7 surfaces by reactive deposition epitaxy (RDE) in an integrated ultrahigh vacuum (UHV) system. Transmission electron microscopy (TEM) confirmed that the as-deposited epitaxial phase exhibits rod-like and equilateral triangular morphology. The as-deposited phase was identified as c-FeSi 2 by electron diffraction and high-resolution transmission electron microscopy. It was found that there exists lattice distortion in epitaxial c-FeSi 2 phase. Upon annealing at 1073 K, the metastable c-FeSi 2 transforms into equilibrium β-FeSi 2 phase, the latter inherits completely the morphology of c-FeSi 2 phase. Based on RDE and subsequent annealing, a new fabrication technique to grow rod-like semiconducting β-FeSi 2 on a Si substrate has been proposed in the present work

  6. Sistema de Informação em Saúde do Trabalhador: desafios e perspectivas para o SUS Occupational Health Information System: challenges and perspectives in the Brazilian Unified Health System (SUS

    Directory of Open Access Journals (Sweden)

    Luiz Augusto Facchini

    2005-12-01

    Full Text Available O presente artigo identifica e discute alguns desafios e perspectivas relativos à implantação de um Sistema de Informações em Saúde do Trabalhador (SIST no âmbito do Sistema Único de Saúde (SUS. Os desafios para a coleta, produção e a análise de dados e a disseminação continuada de informações sobre o estado de saúde dos trabalhadores e seus determinantes são revisados. Há destaque para a necessidade de investimentos em capacitação de recursos humanos, articulação e harmonização das bases de dados de interesse à saúde do trabalhador, implantação de infra-estrutura de informática nos níveis locais e da coleta das informações na rede de serviços do SUS, e integração e articulação interministerial. A realização da 3ª Conferência Nacional de Saúde do Trabalhador e a recém aprovada Política Nacional de Segurança e Saúde do Trabalhador representam reforços importantes para o debate sobre a implantação do SIST e sua prioridade na agenda do SUS. A relativa sintonia entre as agendas de técnicos, pesquisadores, trabalhadores e lideranças sindicais na defesa comum de um sistema de informações também é vista como um apoio à implantação do SIST e seu efetivo controle social.This paper presents a review of challenges and perspectives regarding the development of an occupational health information system in the Brazilian Unified Health System (SUS. It stress the need to set up a process of continuous data collection, processing, analyzing and communication of information on worker’s health and its determinants, emphasizing occupational risks. The paper also address the need to support the training of health workers. It is also recommended to take into consideration the feasibility of database standardization that allows linkage and, improvement in the information technologies utilized in health services, especially in community health centers, following a coordinated state action. Both, the 3rd

  7. Las pseudociencias como problema social en la era tecnocientífica. Un recorrido por la ciencia y sus enemigos dentro y fuera

    Directory of Open Access Journals (Sweden)

    Jesús A. Valero-Matas

    2017-10-01

    Full Text Available El presente artículo se ocupa del tema de las pseudociencias como un problema social de la actualidad que es necesario analizar desde sus bases teóricas, sus antecedentes históricos y sus nuevos espacios de disputa. En este recorrido por la ciencia y sus enemigos, se evidencia que la proliferación de estos movimientos no puede entenderse sin tomar en consideración diversos actores, entre los que destacan los medios de comunicación, mediante su tarea de divulgación científica; las grandes empresas, especialmente las corporaciones farmacéuticas; los intelectuales, como inspiradores de esos grupos anticiencia; y por supuesto, los gobiernos y sus políticas.

  8. Passivation of surface-nanostructured f-SiC and porous SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang; Ou, Yiyu

    The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

  9. Reduced Pressure-Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

    International Nuclear Information System (INIS)

    Hartmann, J.M.; Andrieu, F.; Lafond, D.; Ernst, T.; Bogumilowicz, Y.; Delaye, V.; Weber, O.; Rouchon, D.; Papon, A.M.; Cherkashin, N.

    2008-01-01

    We have first of all quantified the impact of pressure on Si and SiGe growth kinetics. Definite growth rate and Ge concentration increases with the pressure have been evidenced at low temperatures (650-750 deg. C). By contrast, the high temperature (950-1050 deg. C) Si growth rate either increases or decreases with pressure (gaseous precursor depending). We have then described the selective epitaxial growth process we use to form Si or Si 0.7 Ge 0.3 :B raised sources and drains on ultra-thin patterned Silicon-On-Insulator (SOI) substrates. We have afterwards presented the specifics of SiGe virtual substrates and of the tensile-strained Si layers grown on top (used as templates for the elaboration of tensily strained-SOI wafers). The tensile strain, which can be tailored from 1.3 up to 3 GPa, leads to an electron mobility gain by a factor of 2 in n-Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) built on top. High Ge content SiGe virtual substrates can also be used for the elaboration of compressively strained Ge channels, with impressive hole mobility gains (x9) compared to bulk Si. After that, we have described the main structural features of thick Ge layers grown directly on Si (that can be used as donor wafers for the elaboration of GeOI wafers or as the active medium of near infrared photo-detectors). Finally, we have shown how Si/SiGe multilayers can be used for the formation of high performance 3D devices such as multi-bridge channel or nano-beam gate-all-around FETs, the SiGe sacrificial layers being removed thanks to plasma dry etching, wet etching or in situ gaseous HCl etching

  10. Plasticity-induced martensitic transformation in austenitic stainless steels SUS 304 and SUS 316 L at room and liquid nitrogen temperatures. Quantitative measurement using X-ray diffraction method

    International Nuclear Information System (INIS)

    Iwasaki, Yoshifumi; Nakasone, Yuji; Shimizu, Tetsu; Kobayashi, Noboru

    2006-01-01

    The present study investigates plasticity-induced martensitic transformation in two types of austenitic stainless steels SUS 304 and 316 L subjected to uniform tensile stresses at room and liquid nitrogen temperatures. The X-ray diffraction method was used in order to measure volume fractions of transformed α' and ε' martensitic phases and to obtain the dependence of the volume fractions of these phases on the applied strain level ε. The difficulty in the measurement of the martensitic phases by the X-ray diffraction method caused by the preferred orientation which had been introduced during the rolling process and during the tensile tests was overcome by the help of Arnell's Method. Two types of target materials, i.e. Cu and Mo for the X-ray source were used to verify the accuracy and reproducibility of the present X-ray diffraction analyses. The results were also compared with those obtained by the saturation magnetization method using VSM, or vibrating-sample magnetometer reported elsewhere. It was revealed that α' was transformed in SUS 304 both at 297 and 77 K whereas in SUS 316L only at 77 K. Another type of martensitic phase, i.e., ε was transformed in the both steels only at 77 K. Almost the same values of the volume fractions of α' and ε' phases were obtained by the two types of target materials. The plots of α' volume fraction obtained by the X-ray diffraction methods vs. that by VSM showed a good linear correlation. (author)

  11. Si/SiC heterojunction optically controlled transistor with charge compensation layer

    Directory of Open Access Journals (Sweden)

    Pu Hongbin

    2016-01-01

    Full Text Available A novel n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has been studied in the paper. The performance of the device is simulated using Silvaco Atlas tools, which indicates excellent performances of the device in both blocking state and conducting state. The device also has a good switching characteristic with 0.54μs as rising time and 0.66μs as falling time. With the charge compensation layer, the breakdown voltage and the spectral response intensity of the device are improved by 90V and 33A/W respectively. Compared with optically controlled transistor without charge compensation layer, the n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has a better performance.

  12. Characterization of SiC–SiC composites for accident tolerant fuel cladding

    Energy Technology Data Exchange (ETDEWEB)

    Deck, C.P., E-mail: Christian.Deck@ga.com; Jacobsen, G.M.; Sheeder, J.; Gutierrez, O.; Zhang, J.; Stone, J.; Khalifa, H.E.; Back, C.A.

    2015-11-15

    Silicon carbide (SiC) is being investigated for accident tolerant fuel cladding applications due to its high temperature strength, exceptional stability under irradiation, and reduced oxidation compared to Zircaloy under accident conditions. An engineered cladding design combining monolithic SiC and SiC–SiC composite layers could offer a tough, hermetic structure to provide improved performance and safety, with a failure rate comparable to current Zircaloy cladding. Modeling and design efforts require a thorough understanding of the properties and structure of SiC-based cladding. Furthermore, both fabrication and characterization of long, thin-walled SiC–SiC tubes to meet application requirements are challenging. In this work, mechanical and thermal properties of unirradiated, as-fabricated SiC-based cladding structures were measured, and permeability and dimensional control were assessed. In order to account for the tubular geometry of the cladding designs, development and modification of several characterization methods were required.

  13. EFFECT OF THE Si POWDER ADDITIONS ON THE PROPERTIES OF SiC COMPOSITES

    Directory of Open Access Journals (Sweden)

    GUOGANG XU

    2012-09-01

    Full Text Available By means of transient plastic phase process, the SiC silicon carbide kiln furniture materials were produced through adding Si powder to SiC materials. At the condition of the same additions of SiO2 powder, the effect of the Si powder additions on properties of silicon carbide materials after sintered at 1450°C for 3 h in air atmosphere was studied by means of SEM and other analysis methods. The results showed that silicon powder contributes to both sintering by liquid state and plastic phase combination to improve the strength of samples. When the Si powder additions is lower than 3.5 %, the density and strength of samples increase and porosity decrease with increasing Si powder additions. However when the Si powder additions is higher than 3.5 %, the density and strength of samples decrease and porosity increase with increasing Si powder additions. With increasing of Si additions, the residual strength of sample after thermal shocked increased and linear change rate decreased, and get to boundary value when Si additions is 4.5 %. The results also indicated that at the same sintering temperature, the sample with 3.5 % silicon powder has maximum strength.

  14. Aplicaciones del SiC biomórfico como reforzante estructural en hormigones refractarios

    Directory of Open Access Journals (Sweden)

    Sepúlveda, R.

    2005-10-01

    Full Text Available This work is devoted to the study of the time and temperature dependence of the static grain growth in YTZP 4 mol %, with an average grain size within the submicrometric range (> 0.1 μm. Also, the mechanical response in the temperature interval between 1200 ºC and 1500 ºC is analysed. The grain growth is controlled by the yttria segregation at the grain boundaries, which plays a key role in the cationic diffusion processes. Microstructural characterization of both as-received and deformed samples allows to conclude that plastic deformation is due to grain boundary sliding (GBS, with stress exponents increasing with the flow stress, but in all cases they are lower than n = 2.

    Una posible aplicación del SiC biomórfico (bioSiC son los reforzante estructural en hormigones refractarios. En este caso se han fabricado piezas de bioSiC con forma de cilindros alargados, 3-4 mm de diámetro y 30-35 mm de longitud, mediante infiltración reactiva de Si líquido en piezas de carbón obtenidas por pirolización de madera de haya de calidad comercial. Hemos estudiado las características microestructurales y las propiedades mecánicas de los reforzantes, como paso previo al estudio de la aplicación mencionada, de la que se ofrece un avance en este trabajo. Para caracterizar la calidad del material y del proceso de fabricación, la microestructura de las piezas se ha estudiado mediante microscopía electrónica de barrido. Los reforzantes de bioSiC fueron ensayados a compresión uniaxial y flexión en cuatro puntos a temperatura ambiente y a alta temperatura (1250-1400ºC para la determinación de sus propiedades mecánicas, y se realizaron estudios fractográficos en el segundo tipo de ensayos. Subsecuentemente, se prepararon ladrillos refractarios con un 3% en peso de reforzantes de bioSiC, que fueron curados a diferentes temperaturas (máx. 1600ºC. Estos ladrillos se han ensayado en compresión y flexión en tres puntos, a temperatura ambiente

  15. LA CONCILIACIÓN PREPROCESAL EN EL SISTEMA PENAL ACUSATORIO Y SUS PRINCIPALES APORTES

    Directory of Open Access Journals (Sweden)

    Dayana Becerra

    2009-01-01

    Full Text Available La aproximación que se efectúa en el presente estudio, inicia con un acercamiento al concepto de conciliación como mecanismo alternativo de resolución de conflictos, estableciendo los rasgos generales de esta figura; para posteriormente analizar el antecedente inmediato de la conciliación preprocesal en la ley 600 de 2.000, que abrió camino para concederle en materia penal a este mecanismo mayor importancia. Subsiguientemente se profundiza en la conciliación preprocesal consagrada expresamente en la ley 906 de 2004, y se analizan los cambios generados, para así conocer sus características, y determinar sus principales aportes, en el marco del sistema penal acusatorio.

  16. Irradiation project of SiC/SiC fuel pin 'INSPIRE': Status and future plan

    International Nuclear Information System (INIS)

    Kohyama, Akira; Kishimoto, Hirotatsu

    2015-01-01

    After the March 11 Disaster in East-Japan, Research and Development towards Ensuring Nuclear Safety Enhancement for LWR becomes a top priority R and D in nuclear energy policy of Japan. The role of high temperature non-metallic materials, such as SiC/SiC, is becoming important for the advanced nuclear reactor systems. SiC fibre reinforced SiC composite has been recognised to be the most attractive option for the future, now, METI fund based project, INSPIRE, has been launched as 5-year termed project at OASIS in Muroran Institute of Technology aiming at early realisation of this system. INSPIRE is the irradiation project of SiC/SiC fuel pins aiming to accumulate material, thermal, irradiation effect data of NITE-SiC/SiC in BWR environment. Nuclear fuel inserted SiC/SiC fuel pins are planned to be installed in the Halden reactor. The project includes preparing the NITE-SiC/SiC tubes, joining of end caps, preparation of rigs to control the irradiation environment to BWR condition and the instruments to measure the condition of rigs and pins in operation. Also, basic neutron irradiation data will be accumulated by SiC/SiC coupon samples currently under irradiation in BR2. The output from this project may present the potentiality of NITE-SiC/SiC fuel cladding with the first stage fuel-cladding interaction. (authors)

  17. Entusiastas, aficionados y espectadores: sus valores, motivaciones y compromiso

    Directory of Open Access Journals (Sweden)

    Miquel Torregrosa

    2009-01-01

    Full Text Available El interés de las ciencias aplicadas al deporte en los espectadores y el espectáculo deportivo ha sido más bien escaso y en muchos casos sobrecentrado en la violencia. El objetivo de este trabajo es proponer una clasificación alternativa de los aficionados al fútbol a partir del tipo de contacto que tienen con el espectáculo y describir sus valores, motivaciones y compromiso. Mil setecientas diecinueve personas asistentes a partidos de fútbol organizados por la Liga de Fútbol Profesional contestaron cuestionarios sobre sus valores, motivaciones y relación con el fútbol. Los resultados muestranque los entusiastas son los aficionados más motivados y comprometidos con el fútbol al mismo tiempo que participan significativamente más de valores relacionados con el conservadurismo y la autopromoción que las otras tres categorías (espectadores, aficionados presenciales y aficionados virtuales. La clasificaciónpropuesta en base al tipo de contacto con el fútbol permite conceptualizar el fútbol como algo más que lo que ocurre en los estadios y abre las puertas a intervencionesdesde lo positivo para promover el fair play y la deportividad en los aficionados.

  18. Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

    International Nuclear Information System (INIS)

    Varzgar, John B.; Kanoun, Mehdi; Uppal, Suresh; Chattopadhyay, Sanatan; Tsang, Yuk Lun; Escobedo-Cousins, Enrique; Olsen, Sarah H.; O'Neill, Anthony; Hellstroem, Per-Erik; Edholm, Jonas; Ostling, Mikael; Lyutovich, Klara; Oehme, Michael; Kasper, Erich

    2006-01-01

    The reliability of gate oxides on bulk Si and strained Si (s-Si) has been evaluated using constant voltage stressing (CVS) to investigate their breakdown characteristics. The s-Si architectures exhibit a shorter life time compared to that of bulk Si, which is attributed to higher bulk oxide charges (Q ox ) and increased surface roughness in the s-Si structures. The gate oxide in the s-Si structure exhibits a hard breakdown (HBD) at 1.9 x 10 4 s, whereas HBD is not observed in bulk Si up to a measurement period of 1.44 x 10 5 s. The shorter lifetime of the s-Si gate oxide is attributed to a larger injected charge (Q inj ) compared to Q inj in bulk Si. Current-voltage (I-V) measurements for bulk Si samples at different stress intervals show an increase in stress induced leakage current (SILC) of two orders in the low voltage regime from zero stress time to up to 5 x 10 4 s. In contrast, superior performance enhancements in terms of drain current, maximum transconductance and effective channel mobility are observed in s-Si MOSFET devices compared to bulk Si. The results from this study indicate that further improvement in gate oxide reliability is needed to exploit the sustained performance enhancement of s-Si devices over bulk Si

  19. Electrochemical characteristics of nc-Si/SiC composite for anode electrode of lithium ion batteries

    International Nuclear Information System (INIS)

    Jeon, Bup Ju; Lee, Joong Kee

    2014-01-01

    Graphical abstract: Cycling performances and coulombic efficiencies of the nc-Si/SiC composite anodes at different CH 4 /SiH 4 mole ratios. -- Highlights: • Our work has focused on irreversible discharge capacity and capacity retention of nc-Si/SiC composite particles. • Particles comprised a mixed construction of nc-Si/SiC structure with dual phases. • The SiC phase acted as retarding media, leading to enhanced cycle stability. -- Abstract: nc-Si/SiC composite particles were prepared as an anode material for lithium ion batteries using a plasma jet with DC arc discharge. The composition of the nc-Si/SiC composite particles was controlled by setting the mole ratio of CH 4 and SiH 4 precursor gases. X-ray diffraction, TEM images, and Raman shift analyses revealed that the synthesized nc-Si/SiC composite particles comprised a construction of nano-nocaled structure with crystalline phases of active silicon, highly disordered amorphous carbon of graphite and crystalline phases of β-SiC. In the experimental range examined, the nc-Si/SiC composite particles showed good coulombic efficiency in comparison with particles high Si–Si bonding content due to the interplay of particles with a small proportion of carbon and the buffering effect against volume expansion by structural stabilization, and played a role as retarding media for the rapid electrochemical reactions of the SiC crystal against lithium

  20. Electrochemical characteristics of nc-Si/SiC composite for anode electrode of lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Bup Ju [Department of Energy Resources, Shinhan University, 233-1, Sangpae-dong, Dongducheon, Gyeonggi-do, 483-777 (Korea, Republic of); Lee, Joong Kee, E-mail: leejk@kist.re.kr [Advanced Energy Materials Processing Laboratory, Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)

    2014-03-25

    Graphical abstract: Cycling performances and coulombic efficiencies of the nc-Si/SiC composite anodes at different CH{sub 4}/SiH{sub 4} mole ratios. -- Highlights: • Our work has focused on irreversible discharge capacity and capacity retention of nc-Si/SiC composite particles. • Particles comprised a mixed construction of nc-Si/SiC structure with dual phases. • The SiC phase acted as retarding media, leading to enhanced cycle stability. -- Abstract: nc-Si/SiC composite particles were prepared as an anode material for lithium ion batteries using a plasma jet with DC arc discharge. The composition of the nc-Si/SiC composite particles was controlled by setting the mole ratio of CH{sub 4} and SiH{sub 4} precursor gases. X-ray diffraction, TEM images, and Raman shift analyses revealed that the synthesized nc-Si/SiC composite particles comprised a construction of nano-nocaled structure with crystalline phases of active silicon, highly disordered amorphous carbon of graphite and crystalline phases of β-SiC. In the experimental range examined, the nc-Si/SiC composite particles showed good coulombic efficiency in comparison with particles high Si–Si bonding content due to the interplay of particles with a small proportion of carbon and the buffering effect against volume expansion by structural stabilization, and played a role as retarding media for the rapid electrochemical reactions of the SiC crystal against lithium.

  1. Synthesis of SiC decorated carbonaceous nanorods and its hierarchical composites Si@SiC@C for high-performance lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chundong [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Li, Yi, E-mail: liyi@suda.edu.cn [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Ostrikov, Kostya [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane, Queensland 4000 (Australia); Plasma Nanoscience, Industrial Innovation Program, CSIRO Manufacturing Flagship, Lindfield, New South Wales 2070 (Australia); Yang, Yonggang [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Zhang, Wenjun, E-mail: apwjzh@cityu.edu.hk [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China)

    2015-10-15

    SiC- based nanomaterials possess superior electric, thermal and mechanical properties. However, due to the tricky synthesis process, which needs to be carried out under high temperature with multi-step reaction procedures, the further application is dramatically limited. Herein, a simple as well as a controllable approach is proposed for synthesis of SiC- based nanostructures under low temperature. Phenyl-bridged polysilsesquioxane was chosen as the starting material to react with magnesium at 650 °C, following which SiC@C nanocomposites were finally obtained, and it maintains the original bent rod-like architecture of polysilsesquioxanes. The possible formation process for the nanocomposites can proposed as well. The electrochemical behaviour of nanocomposites was accessed, verifying that the synthesized SiC@C nanocomposites deliver good electrochemical performance. Moreover, SiC@C also shows to be a promising scaffold in supporting Si thin film electrode in achieving stable cycling performance in lithium ion batteries. - Highlights: • SiC@C bent nanorods were synthesized with a magnesium reaction approach. • Carbon nanorod spines studded with ultrafine β-SiC nanocrystallines was realized. • The synthesized SiC@C keeps the original rod-like structure of polysilsesquioxanes. • The possible formation process for the nanocomposites was analysed and proposed. • Si@SiC@C nanocomposites reveal good electrochemical performance in LIBs.

  2. Progress in blanket designs using SiCf/SiC composites

    International Nuclear Information System (INIS)

    Giancarli, L.; Golfier, H.; Nishio, S.; Raffray, R.; Wong, C.; Yamada, R.

    2002-01-01

    This paper summarizes the most recent design activities concerning the use of SiC f /SiC composite as structural material for fusion power reactor breeding blanket. Several studies have been performed in the past. The most recent proposals are the TAURO blanket concept in the European Union, the ARIES-AT concept in the US, and DREAM concept in Japan. The first two concepts are self-cooled lithium-lead blankets, while DREAM is an helium-cooled beryllium/ceramic blanket. Both TAURO and ARIES-AT blankets are essentially formed by a SiC f /SiC box acting as a container for the lithium-lead which has the simultaneous functions of coolant, tritium breeder, neutron multiplier and, finally, tritium carrier. The DREAM blanket is characterized by small modules using pebble beds of Be as neutron multiplier material, of Li 2 O (or other lithium ceramics) as breeder material and of SiC as shielding material. The He coolant path includes a flow through the pebble beds and a porous partition wall. For each blanket, this paper describes the main design features and performances, the most recent design improvements, and the proposed manufacturing routes in order to identify specific issues and requirements for the future R and D on SiC f /SiC

  3. Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology

    Energy Technology Data Exchange (ETDEWEB)

    Bantaculo, Rolando, E-mail: rolandobantaculo@yahoo.com; Saitoh, Eiji; Miyamoto, Yu; Handa, Hiroyuki; Suemitsu, Maki

    2011-11-01

    A method to realize a novel hybrid orientations of Si surfaces, Si(111) on Si(110), has been developed by use of a Si(111)/3C-SiC(111)/Si(110) trilayer structure. This technology allows us to use the Si(111) portion for the n-type and the Si(110) portion for the p-type channels, providing a solution to the current drive imbalance between the two channels confronted in Si(100)-based complementary metal oxide semiconductor (CMOS) technology. The central idea is to use a rotated heteroepitaxy of 3C-SiC(111) on Si(110) substrate, which occurs when a 3C-SiC film is grown under certain growth conditions. Monomethylsilane (SiH{sub 3}-CH{sub 3}) gas-source molecular beam epitaxy (GSMBE) is used for this 3C-SiC interlayer formation while disilane (Si{sub 2}H{sub 6}) is used for the top Si(111) layer formation. Though the film quality of the Si epilayer leaves a lot of room for betterment, the present results may suffice to prove its potential as a new technology to be used in the next generation CMOS devices.

  4. Magnetic ordering of YPd{sub 2}Si-type HoNi{sub 2}Si and ErNi{sub 2}Si compounds

    Energy Technology Data Exchange (ETDEWEB)

    Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow, 119992 (Russian Federation); Isnard, O. [CNRS, Insitut. Néel, 25 Rue Des Martyrs BP166 x, F-38042 Grenoble (France); Université Grenoble Alpes, Inst. Néel, F-38042 Grenoble (France); Nirmala, R. [Indian Institute of Technology Madras, Chennai 600 036 (India); Quezado, S.; Malik, S.K. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59082-970 (Brazil)

    2016-12-01

    Magnetic properties of YPd{sub 2}Si-type HoNi{sub 2}Si and ErNi{sub 2}Si were investigated via neutron diffraction and magnetisation measurements. HoNi{sub 2}Si and ErNi{sub 2}Si show ferromagnetic-like ordering at T{sub C} of 9 K and 7 K, respectively. The paramagnetic Weiss temperatures are 9 K and 11 K and the effective magnetic moments are 10.76 μ{sub B}/fu and 9.79 μ{sub B}/fu for HoNi{sub 2}Si and ErNi{sub 2}Si compounds, respectively. The HoNi{sub 2}Si and ErNi{sub 2}Si are soft ferromagnets with saturation magnetization of 8.1 μ{sub B}/fu and 7.5 μ{sub B}/fu, respectively at 2 K and in field of 140 kOe. The isothermal magnetic entropy change, ΔS{sub m}, has a maximum value of −15.6 J/kg·K at 10 K for HoNi{sub 2}Si and −13.9 J/kg·K at 6 K for ErNi{sub 2}Si for a field change of 50 kOe. Neutron diffraction study in zero applied field shows mixed ferromagnetic-antiferromagnetic ordering of HoNi{sub 2}Si at ~9 K and its magnetic structure is a sum of a-axis ferromagnetic F{sub a}, b-axis antiferromagnetic AF{sub b} and c-axis antiferrromagnetic AF{sub c} components of Pn′a2{sub 1}′={1, m_x′/[1/2, 1/2, 1/2], 2_y′/[0, 1/2, 0], m_z/[1/2, 0, 1/2]} magnetic space group and propagation vector K{sub 0}=[0, 0, 0]. The holmium magnetic moment reaches a value of 9.23(9) μ{sub B} at 1.5 K and the unit cell of HoNi{sub 2}Si undergoes isotropic contraction around the temperature of magnetic transition. - Graphical abstract: HoNi{sub 2}Si: mixed ferro-antiferromagnet (F{sub a}+AF{sub b}+AF{sub c}){sup K0} with Pn′a2{sub 1}′ magnetic space group and K{sub 0}=[0, 0, 0] propagation vector below 10 K. - Highlights: • Ferro-antiferromagnetic ordering is observed in HoNi{sub 2}Si at 9 K and in ErNi{sub 2}Si at 7 K. • HoNi{sub 2}Si is soft ferromagnet with ΔS{sub m} of −15.6 J/kg·K at 10 K in field of 0–50 kOe. • ErNi{sub 2}Si is soft ferromagnet with ΔS{sub m} of −13.9 J/kg·K at 6 K in field of 0–50 kOe. • HoNi{sub 2}Si shows mixed F

  5. Compósitos SiCf /SiC utilizados em sistemas de proteção térmica SiCf /SiC composites for thermal protection systems

    Directory of Open Access Journals (Sweden)

    M. Florian

    2005-09-01

    Full Text Available Compósitos de carbeto de silício (SiC reforçado com fibras de carbeto de silício (SiCf são materiais candidatos em potencial para utilização em sistemas de proteção térmica em altas temperaturas devido principalmente à boa condutividade térmica na direção da fibra e muito baixa condutividade térmica na direção transversal à fibra, alta dureza, estabilidade térmica e à corrosão por oxidação. O compósito SiCf/SiC possui uma matriz de SiC reforçada com fibras contínuas policristalinas de SiC e é obtido por reações de conversão em altas temperaturas e atmosfera controlada, utilizando o compósito carbono/carbono como precursor. O processo de Reação Química em Vapor (CVR foi utilizado para a fabricação de compósitos SiCf/SiC com alta pureza na fase de SiC-beta. O compósito precursor de carbono/carbono foi fabricado com fibra de carbono não estabilizada e matriz carbonosa derivada da resina fenólica na forma de carbono isotrópico. O compósito convertido exibiu uma densidade de 1,75 g/cm³, com 40% de porosidade aberta e resistência à flexão de 80 MPa medida por ensaio flexão em 4 pontos. A área especifica medida pela técnica de BET é dependente da temperatura de conversão e das condições inicias do precursor de carbono, podendo chegar a 18 m²/g.Composites based on silicon carbide are potential candidate materials for thermal protection systems mainly due to its good thermal conductivity in fiber direction and very low transversal thermal conductivity, high hardness, corrosion and thermal resistance. SiCf/SiC composite presents a SiC matrix reinforced with SiC polycrystalline continuous fibers. The composite was obtained by conversion reactions at high temperature and controlled atmosphere from a carbon/carbon composite precursor. The CVR process was used to fabricate SiC /SiC composite with crystalline high-purity beta-SiC from a carbon-carbon precursor fabricated with non-stabilized carbon fiber and

  6. The Leakage Current Improvement of a Ni-Silicided SiGe/Si Junction Using a Si Cap Layer and the PAI Technique

    International Nuclear Information System (INIS)

    Chang Jian-Guang; Wu Chun-Bo; Ji Xiao-Li; Ma Hao-Wen; Yan Feng; Shi Yi; Zhang Rong

    2012-01-01

    We investigate the leakage current of ultra-shallow Ni-silicided SiGe/Si junctions for 45 nm CMOS technology using a Si cap layer and the pre-amorphization implantation (PAI) process. It is found that with the conventional Ni silicide method, the leakage current of a p + (SiGe)—n(Si) junction is large and attributed to band-to-band tunneling and the generation-recombination process. The two leakage contributors can be suppressed quite effectively when a Si cap layer is added in the Ni silicide method. The leakage reduction is about one order of magnitude and could be associated with the suppression of the agglomeration of the Ni germano-silicide film. In addition, the PAI process after the application of a Si cap layer has little effect on improving the junction leakage but reduces the sheet resistance of the silicide film. As a result, the novel Ni silicide method using a Si cap combined with PAI is a promising choice for SiGe junctions in advanced technology. (cross-disciplinary physics and related areas of science and technology)

  7. Narrow photoluminescence peak from Ge(Si) islands embedded between tensile-strained Si layers

    Energy Technology Data Exchange (ETDEWEB)

    Shaleev, Mikhail; Novikov, Alexey; Baydakova, Nataliya; Yablonskiy, Artem; Drozdov, Yuriy; Lobanov, Dmitriy; Krasilnik, Zakhary [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Kuznetsov, Oleg [Physical-Technical Research Institute, Nizhny Novgorod State University, pr. Gagarina 23, 603950 Nizhny Novgorod (Russian Federation)

    2011-03-15

    The influence of thickness of the strained Si layers, measurement temperature and optical pumping power on width of the photoluminescence line from Ge(Si) self-assembled nanoislands grown on relaxed SiGe/Si(001) buffer layers and embedded between tensile-stained Si layers was studied. This line appears due to the II-type optical transition between the holes localized in islands and the electrons confined in tensile-strained Si layers under and above the islands. The possibility of tuning the photoluminescence line width by changing the strained Si layer thicknesses under and above the islands is showed. The decrease of the photoluminescence line width from Ge(Si) islands down to values comparable with width of the PL line from InAs/GaAs quantum dots was achieved due to the quantum confinement of electrons in thin strained Si layers and taking into account of the higher diffusion-induced smearing of strained Si layer above the islands. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. The structure modification of Si-SiO2 irradiated by Fe+ ion

    International Nuclear Information System (INIS)

    Jin Tao; Ma Zhongquan; Guo Qi

    1992-01-01

    The effect of the iron ion implantation on the oxide surface and SiO 2 -Si interface of MOS structure was studied by X-ray photo-electron spectroscopy (XPS), and the chemical states of compounds formed were examined. The results obtained show that in the surface layers of SiO 2 the pure Si micro-regions are formed under the implantation and the interface layers of SiO 2 the pure Si micro-regions are formed under the implantation and the interface thickness is almost doubled that leads to failure of MOS capacitors. The physical and chemical mechanisms of MOS structure change by Fe + ion implantation are also discussed and analyzed

  9. Memórias e representações acerca do SUS para técnicos e auxiliares de enfermagem

    Directory of Open Access Journals (Sweden)

    Caren Camargo Espírito Santo

    2010-12-01

    Full Text Available As memórias e representações dos SUS influenciam saberes e práticas profissionais. Assim, este estudo tem o objetivo de analisar as memórias e as representações de profissionais de enfermagem acerca do SUS. Trata-se de uma pesquisa qualitativa baseada nas Representações Sociais e desenvolvida com 26 profissionais de enfermagem de nível fundamental e médio. Os dados foram coletados em 2005 por entrevistas e analisados pelo software ALCESTE 4.7. Os resultados foram organizados em dois grupos: o bloco temático 1 que engloba a classe 1 (Imagens e definições do SUS e do INAMPS e a classe 4 (As transformações ocorridas no sistema de saúde; e o bloco temático 2, com a classe 2 (Representações e memórias da rede básica de saúde e classe 3 (As interrelações da equipe de enfermagem: o médico e os usuários no contexto do SUS. Conclui-se que ainda não está clara para os profissionais a condição de acesso aos serviços públicos de saúde sobrepondo o SUS ao sistema antigo de saúde, o INAMPS, e que as dificuldades encontradas pelos sujeitos nas questões concernentes ao acesso aos serviços de saúde, às relações interpessoais e às condições de trabalho apontam para o SUS como um sistema ainda em processo de implementação.

  10. Electroplating chromium on CVD SiC and SiCf-SiC advanced cladding via PyC compatibility coating

    Science.gov (United States)

    Ang, Caen; Kemery, Craig; Katoh, Yutai

    2018-05-01

    Electroplating Cr on SiC using a pyrolytic carbon (PyC) bond coat is demonstrated as an innovative concept for coating of advanced fuel cladding. The quantification of coating stress, SEM morphology, XRD phase analysis, and debonding test of the coating on CVD SiC and SiCf-SiC is shown. The residual tensile stress (by ASTM B975) of electroplated Cr is > 1 GPa prior to stress relaxation by microcracking. The stress can remove the PyC/Cr layer from SiC. Surface etching of ∼20 μm and roughening to Ra > 2 μm (by SEM observation) was necessary for successful adhesion. The debonding strength (by ASTM D4541) of the coating on SiC slightly improved from 3.6 ± 1.4 MPa to 5.9 ± 0.8 MPa after surface etching or machining. However, this improvement is limited due to the absence of an interphase, and integrated CVI processing may be required for further advancement.

  11. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping; Sun, Ke; Noh, Sun Young; Kargar, Alireza; Tsai, Meng Lin; Huang, Ming Yi; Wang, Deli; He, Jr-Hau

    2015-01-01

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages

  12. Luminescence of solar cells with a-Si:H/c-Si heterojunctions

    Science.gov (United States)

    Zhigunov, D. M.; Il'in, A. S.; Forsh, P. A.; Bobyl', A. V.; Verbitskii, V. N.; Terukov, E. I.; Kashkarov, P. K.

    2017-05-01

    We have studied the electroluminescence (EL) and photoluminescence (PL) of solar cells containing a-Si:H/c-Si heterojunctions. It is established that both the EL and PL properties of these cells are determined by the radiative recombination of nonequilibrium carriers in crystalline silicon (c-Si). The external EL energy yield (efficiency) of solar cells with a-Si:H/c-Si heterojunctions at room temperature amounts to 2.1% and exceeds the value reached in silicon diode structures. This large EL efficiency can be explained by good passivation of the surface of crystalline silicon and the corresponding increase in lifetime of minority carrier s in these solar cells.

  13. Thermogravimetric and microscopic analysis of SiC/SiC materials with advanced interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Windisch, C.F. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Snead, L.L. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    The chemical stability of SiC/SiC composites with fiber/matrix interfaces consisting of multilayers of SiC/SiC and porous SiC have been evaluated using a thermal gravimetric analyzer (TGA). Previous evaluations of SiC/SiC composites with carbon interfacial layers demonstrated the layers are not chemically stable at goal use temperatures of 800-1100{degrees}C and O{sub 2} concentrations greater than about 1 ppm. No measureable mass change was observed for multilayer and porous SiC interfaces at 800-1100{degrees}C and O{sub 2} concentrations of 100 ppm to air; however, the total amount of oxidizable carbon is on the order of the sensitivity of the TGA. Further studies are in progress to evaluate the stability of these materials.

  14. Fermi surfaces of YRu2Si2 and LaRu2Si2

    International Nuclear Information System (INIS)

    Settai, R.; Ikezawa, H.; Toshima, H.; Takashita, M.; Ebihara, T.; Sugawara, H.; Kimura, T.; Motoki, K.; Onuki, Y.

    1995-01-01

    We have measured the de Haas-van Alphen effect of YRu 2 Si 2 and LaRu 2 Si 2 to clarify the Fermi surfaces and cyclotron masses. Main hole-Fermi surfaces of both compounds with a distorted ellipsoid shape are similar, occupying about half of the Brillouin zone. The small hole-Fermi surfaces with the shape of a rugby ball are three in number for LaRu 2 Si 2 , and one for YRu 2 Si 2 . An electron-Fermi surface consists of a doughnut like shape for LaRu 2 Si 2 , while a cylinder along the [001] direction and a multiply-connected shape exist for YRu 2 Si 2 . The cyclotron masses of YRu 2 Si 2 are a little larger than those of LaRu 2 Si 2 . ((orig.))

  15. Thickness dependent formation and properties of GdSi2/Si(100) interfaces

    International Nuclear Information System (INIS)

    Peto, G.; Molnar, G.; Dozsa, L.; Horvath, Z.E.; Horvath, Zs.J.; Zsoldos, E.; Dimitriadis, C.A.; Papadimitriou, L.

    2005-01-01

    Epitaxial and polycrystalline orthorhombic GdSi 2 films were grown on Si(100) substrates by solid phase reaction between Si and Gd films at different thicknesses of the Gd film. The most important property of these GdSi 2 /Si interfaces was defect formation. This was investigated by studying the properties of the Schottky barriers by means of current voltage and capacitance-voltage characteristics, deep level transient spectroscopy by double crystal X-ray diffractometry, and transmission electron microscopy. Epitaxial growth of the silicide layer ensured a relatively low interface defect density (about 10 10 cm -2 ), while the non-epitaxial growth induced defects of a much higher density (about 10 12 cm -2 ). The defects generated during the silicide formation are located within a depth of about 10 nm from the GdSi 2 /Si interface. (orig.)

  16. EL TRABAJO INVISIBLE DE MENORES DE BAZURTO. MERCADO CENTRAL DE CARTAGENA DE INDIAS

    Directory of Open Access Journals (Sweden)

    Hortensia Naizarra Rodriguez

    2000-08-01

    Full Text Available A un cuando la motivación principal del trabajo infanto juvenil sigue siendo la ayuda a la familia, hay factores de orden cultural que 10 propician. Para las familias de origen rural el trabajo infantil está relacionado con la imagen del menor como símbolo y unidad económica de producción ya que existe la creencia entre los padres que los niños son veloces, ágiles, tienen mucha destreza y voluntad para cierto tipo de trabajo, y por tanto se convierten en una ayuda; pero tras esta denominada ayuda lo que se observa es una carga de responsabilidades que deterioran física, social y emocionalmente al menor y disminuyen ostensiblemente sus opciones de desarrollo humano.

  17. On formation of silicon nanocrystals under annealing SiO2 layers implanted with Si ions

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Yanovskaya, S.G.; Volodin, V.A.; Kesler, V.G.; Lejer, A.F.; Ruault, M.-O.

    2002-01-01

    Raman scattering, X-ray photoelectron spectroscopy, and photoluminescence have been used to study the formation of silicon nanocrystals in SiO 2 implanted with Si ions. Si clusters have been formed at once in the postimplanted layers, providing the excessive Si concentration more ∼ 3 at. %. Si segregation with Si-Si 4 bonds formation is enhanced as following annealing temperature increase, however, the Raman scattering by Si clusters diminishes. The effect is explained by a transformation of the chain-like Si clusters into compact phase nondimensional structures. Segregation of Si nanoprecipitates had ended about 1000 deg C, but the strong photoluminescence typical for Si nanocrystals manifested itself only after 1100 deg C [ru

  18. Implantation of P ions in SiO2 layers with embedded Si nanocrystals

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I.

    2004-01-01

    The effect of 10 13 -10 16 cm -2 P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO 2 layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10 14 cm -2 , thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs

  19. Incidencia de la ley orgánica del sistema nacional de contratación pública desde su promulgación en la optimización del gasto de los recursos del Estado Ecuatoriano y en la estructura social y administrativa de sus entidades

    OpenAIRE

    Obando Torresano, Susana del Rocío

    2011-01-01

    El presente trabajo de tesis cuyo tema es la “Incidencia de la ley orgánica del sistema nacional de contratación pública desde su promulgación en la optimización del gasto de los recursos del estado ecuatoriano y en la estructura social y administrativa de sus entidades” se fundamenta en la verificación del cumplimiento de los objetivos planteados por el Gobierno con este nuevo sistema de contratación pública, si se ha logrado optimizar los procesos de compras del sector públic...

  20. Investigation into solubility and diffusion in SiC-NbC, SiC-TiC, SiC-ZrC systems

    International Nuclear Information System (INIS)

    Safaraliev, G.K.; Tairov, Yu.M.; Tsvetkov, V.F.; Shabanov, Sh.Sh.

    1991-01-01

    An investigation is carried out which demonstrates solid-phase interaction between SiC and NbC, TiC and ZrC monocrystals. The monocrystals are subjected to hot pressing in SiC powder with dispersity of 5x10 -6 m. The pressing temperature is 2270-2570 K and pressure is varied in the range of 20-40 MPa. Element composition and the distribution profile in a thin layer near the boundary of SiC-NbC, SiC-TiC and SiC-ZrC are investigated by the Anger spectroscopy method. The obtained results permit to make the conclusion in the possibility of solid solution formation in investigated systems

  1. Materials and devices for quantum information processing in Si/SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Sailer, Juergen

    2010-12-15

    In this thesis, we cover and discuss the complete way from material science, the fabrication of two-dimensional electron systems (2DES) in Si/SiGe heterostructures in molecular beam epitaxy (MBE), to quantum effects in few-electron devices based on these samples. We applied and compared two different approaches for the creation of pseudo-substrates that are as smooth, relaxed and defect free as possible. In the 'graded buffer' concept, starting from pure Si, the Ge content of the SiGe alloy is slowly and linearly increased until the desired Ge content is reached. In contrast, in the so-called 'low-temperature Si' concept, the SiGe alloy is deposited directly with the final Ge content, but onto a layer of highly defective Si. In terms of crystal defects, the 'graded buffer' turned out to be superior in comparison to the 'low-temperature Si' concept at the expense of a significantly higher material consumption. By continued optimization of the growth process, aiming at reducing the influence of the impurity, it nevertheless became possible to improve the charge carrier mobility from a mere 2000 cm{sup 2}/(Vs) to a record mobility exceeding 100 000 cm{sup 2}/(Vs). Within this work, we extended our MBE system with an electron beam evaporator for nuclear spin free {sup 28}Si. Together with the already existing effusion cell for {sup 70}Ge we were able to realize first 2DES in a nuclear spin free environment after successfully putting it to operation. The highest mobility 2DES in a nuclear spin free environment which have been realized in this thesis exhibited electron mobilities of up to 55 000 cm{sup 2}/(Vs). Quantum effects in Si/SiGe have been investigated in two- and zero-dimensional nanostructures. A remarkable phenomenon in the regime of the integer quantum Hall effect in Si/SiGe 2DES has been discovered and researched. For applications in quantum information processing and for the creation of qubits it is mandatory to

  2. Structure and chemistry of passivated SiC/SiO{sub 2} interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Houston Dycus, J.; Xu, Weizong; LeBeau, James M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907 (United States); Lichtenwalner, Daniel J.; Hull, Brett; Palmour, John W. [Power Devices R& D, Wolfspeed, A Cree Company, Research Triangle Park, North Carolina 27709 (United States)

    2016-05-16

    Here, we report on the chemistry and structure of 4H-SiC/SiO{sub 2} interfaces passivated either by nitric oxide annealing or Ba deposition. Using aberration corrected scanning transmission electron microscopy and spectroscopy, we find that Ba and N remain localized at SiC/SiO{sub 2} interface after processing. Further, we find that the passivating species can introduce significant changes to the near-interface atomic structure of SiC. Specifically, we quantify significant strain for nitric oxide annealed sample where Si dangling bonds are capped by N. In contrast, strain is not observed at the interface of the Ba treated samples. Finally, we place these results in the context of field effect mobility.

  3. Self-aligned indium–gallium–zinc oxide thin-film transistors with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Rongsheng, E-mail: rschen@ust.hk; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

    2014-08-01

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm{sup 2}/Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10{sup 6}. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress.

  4. Chemical compatibility issues associated with use of SiC/SiC in advanced reactor concepts

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, Dane F. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-09-01

    Silicon carbide/silicon carbide (SiC/SiC) composites are of interest for components that will experience high radiation fields in the High Temperature Gas Cooled Reactor (HTGR), the Very High Temperature Reactor (VHTR), the Sodium Fast Reactor (SFR), or the Fluoride-cooled High-temperature Reactor (FHR). In all of the reactor systems considered, reactions of SiC/SiC composites with the constituents of the coolant determine suitability of materials of construction. The material of interest is nuclear grade SiC/SiC composites, which consist of a SiC matrix [high-purity, chemical vapor deposition (CVD) SiC or liquid phase-sintered SiC that is crystalline beta-phase SiC containing small amounts of alumina-yttria impurity], a pyrolytic carbon interphase, and somewhat impure yet crystalline beta-phase SiC fibers. The interphase and fiber components may or may not be exposed, at least initially, to the reactor coolant. The chemical compatibility of SiC/SiC composites in the three reactor environments is highly dependent on thermodynamic stability with the pure coolant, and on reactions with impurities present in the environment including any ingress of oxygen and moisture. In general, there is a dearth of information on the performance of SiC in these environments. While there is little to no excess Si present in the new SiC/SiC composites, the reaction of Si with O2 cannot be ignored, especially for the FHR, in which environment the product, SiO2, can be readily removed by the fluoride salt. In all systems, reaction of the carbon interphase layer with oxygen is possible especially under abnormal conditions such as loss of coolant (resulting in increased temperature), and air and/ or steam ingress. A global outline of an approach to resolving SiC/SiC chemical compatibility concerns with the environments of the three reactors is presented along with ideas to quickly determine the baseline compatibility performance of SiC/SiC.

  5. Comunidad cannábica distrital Bogotá: prácticas del uso de la marihuana en tres de sus colectivos (Fincainteracviva, Surcultiva y Si a la dosis personal)

    OpenAIRE

    Borda Leal, Nelson Efren

    2017-01-01

    Esta investigación es el recorrido por una observación que aporta a la comprensión de prácticas relacionadas con el uso de la marihuana, tomando como base la Comunidad Cannábica Distrital Bogotá, describiendo tres de sus colectivos que exponen prácticas específicas del rol que juegan en dicha comunidad, influidos por el espacio, el significado que tienen de la planta, y finalmente la adecuación a la normatividad vigente, haciendo que surjan una serie de prácticas y problemáticas que son discu...

  6. Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si

    Directory of Open Access Journals (Sweden)

    Goloudina S.I.

    2017-01-01

    Full Text Available High quality single crystal SiC films were prepared by carbonization of polyimide Langmuir-Blodgett films on Si substrate. The films formed after annealing of the polyimide films at 1000°C, 1100°C, 1200°C were studied by Fourier transform-infrared (FTIR spectroscopy, X-ray diffraction (XRD, Raman spectroscopy, transmission electon microscopy (TEM, transmission electron diffraction (TED, and scanning electron microscopy (SEM. XRD study and HRTEM cross-section revealed that the crystalline SiC film begins to grow on Si (111 substrate at 1000°C. According to the HRTEM cross-section image five planes in 3C-SiC (111 film are aligned with four Si(111 planes at the SiC/Si interface. It was shown the SiC films (35 nm grown on Si(111 at 1200°C have mainly cubic 3C-SiC structure with a little presence of hexagonal polytypes. Only 3C-SiC films (30 nm were formed on Si (100 substrate at the same temperature. It was shown the SiC films (30-35 nm are able to cover the voids in Si substrate with size up to 10 μm.

  7. Purity and radioactive decay behaviour of industrial 2D-reinforced SiCf/SiC composites

    International Nuclear Information System (INIS)

    Scholz, H.W.; Zucchetti, M.; Casteleyn, K.; Adelhelm, C.

    1994-01-01

    Ceramic matrix composites based on SiC with continuous fibres (SiC f /SiC) are considered promising structural materials for future fusion devices. It was still to clarify, whether impurities in industrial SiC f /SiC could jeopardise radiological advantages. Experimental impurity analyses revealed a two-dimensionally reinforced SiC f /SiC with the matrix produced by CVI as very pure. Chemo-spectrometric methods were combined with radioactivation methods (CPAA, NAA). A quantification of the main constituents Si, C and O was added. Calculations with the FISPACT-2.4 code and EAF-2 library identified elements detrimental for different low-activation criteria. For the neutron exposure, EEF reactor-study first wall and blanket conditions were simulated. The calculated SiC f /SiC included 48 trace elements. Even under conservative assumptions, all low-activation limits of European interest are fulfilled. Exclusively the hands-on recycling limit for the First Wall can intrinsically not be satisfied with SiC. The theoretical goal of a SiC f /SiC depleted of 28 Si (isotopic tailoring) is critically discussed. ((orig.))

  8. Transformation of sludge Si to nano-Si/SiOx structure by oxygen inward diffusion as precursor for high performance anodes in lithium ion batteries

    Science.gov (United States)

    Hua, Qiqi; Dai, Dongyang; Zhang, Chengzhi; Han, Fei; Lv, Tiezheng; Li, Xiaoshan; Wang, Shijie; Zhu, Rui; Liao, Haojie; Zhang, Shiguo

    2018-05-01

    Although several Si/C composite structures have been proposed for high-performance lithium-ion batteries (LIBs), they have still suffered from expensive and complex processes of nano-Si production. Herein, a simple, controllable oxygen inward diffusion was utilized to transform Si sludge obtained from the photovoltaic (PV) industry into the nano-Si/SiOx structure as a result of the high diffusion efficiency of O inside Si and high surface area of the sludge. After further process, a yolk/shell Si/C structure was obtained as an anode material for LIBs. This composite demonstrated an excellent cycling stability, with a high reversible capacity (˜ 1250 mAh/g for 500 cycles), by void space originally left by the SiOx accommodate inner Si expansion. We believe this is a rather simple way to convert the waste Si into a valuable nano-Si for LIB applications.

  9. Carrier recombination in tailored multilayer Si/Si{sub 1−x}Ge{sub x} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Mala, S.A. [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102 (United States); Tsybeskov, L., E-mail: tsybesko@njit.edu [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102 (United States); Lockwood, D.J.; Wu, X.; Baribeau, J.-M. [National Research Council, Ottawa, ON, Canada KIA 0R6 (Canada)

    2014-11-15

    Photoluminescence (PL) measurements were performed in Si/Si{sub 1−x}Ge{sub x} nanostructures with a single Si{sub 0.92}Ge{sub 0.08} nanometer-thick layer incorporated into Si/Si{sub 0.6}Ge{sub 0.4} cluster multilayers. Under pulsed laser excitation, the PL decay associated with the Si{sub 0.92}Ge{sub 0.08} nano-layer is found to be nearly a 1000 times faster compared to that in Si/Si{sub 0.6}Ge{sub 0.4} cluster multilayers. A model considering Si/SiGe hetero-interface composition and explaining the fast and slow time-dependent recombination rates is proposed.

  10. Structural and photoluminescence properties of Si-based nanosheet bundles rooted on Si substrates

    Science.gov (United States)

    Yuan, Peiling; Tamaki, Ryo; Kusazaki, Shinya; Atsumi, Nanae; Saito, Yuya; Kumazawa, Yuki; Ahsan, Nazmul; Okada, Yoshitaka; Ishida, Akihiro; Tatsuoka, Hirokazu

    2018-04-01

    Si-based nanosheet bundles were synthesized by the extraction of Ca atoms from CaSi2 microwalls grown on Si substrates by inositol hexakisphosphate solution or thermal treatment in FeCl2 vapor. The structural and photoluminescence properties of the Si-based nanosheet bundles were examined. The photoluminescence emissions in the visible region were clearly observed, and the temperature and excitation intensity dependences of the emissions were characterized. The observed Si-based nanosheets consist of thin Si layers, and a superlattice-like layered structural model is proposed to describe the Si-based nanosheet bundle structures and their photoluminescence property. The photoluminescence property of the nanosheets significantly depends on their treatment process. The luminescence mechanism of the nanosheets was discussed.

  11. Pharmaceutical assistance within the SUS: the experience of students in Rural Internship from a Pharmacy Course

    Directory of Open Access Journals (Sweden)

    Luciana Tarbes Mattana Saturnino

    2009-12-01

    Full Text Available The 2002 Brazilian Curricular Lines established a new curriculum for Pharmacy Programs, including amplified information about the Unified Health System (SUS. Following this, some Colleges have implemented a Rural Internship (RI discipline, as a way to promote: a adequate information on the SUS, and b students' interaction with pharmaceutical assistance. In this study we analyzed the perceptions of students enrolled in the Rural Internship program of the undergraduate Pharmacy Program at the Federal University of Minas Gerais. Eight students participated in this study and their perceptions and ideas were obtained by focus groups, both before and after the RI. This information was analyzed by content analysis. The students had a fragmented, distorted view on assistance, before as well as after taking the RI. Nevertheless, the RI provided students with a view of the professional realities and difficulties routinely faced by pharmacists in the public health system. The RI course of the Pharmacy Programs was viewed as an opportunity to improve the professional work within the SUS.As Diretrizes Curriculares de 2002 implantaram um novo currículo para o Curso de Farmácia, trazendo como propósito a aprendizagem para o Sistema Único de Saúde (SUS. Para atender a esta demanda, algumas Faculdades têm implantado a disciplina de Internato Rural (IR como forma de viabilizar o ensino para o SUS e a interação do aluno com a assistência farmacêutica. Este trabalho analisa a concepção de alunos do IR do Curso de Farmácia da Universidade Federal de Minas Gerais sobre a assistência farmacêutica e sobre a atividade do profissional farmacêutico no SUS. A coleta das informações foi realizada por meio da técnica do grupo focal antes e após o IR. Para a análise dos discursos foi utilizada a técnica da análise de conteúdo. Participaram do estudo oito estudantes. Observou-se que os alunos apresentavam uma visão fragmentada sobre a assist

  12. SusG: A Unique Cell-Membrane-Associated [alpha]-Amylase from a Prominent Human Gut Symbiont Targets Complex Starch Molecules

    Energy Technology Data Exchange (ETDEWEB)

    Koropatkin, Nicole M.; Smith, Thomas J. (Danforth)

    2010-09-21

    SusG is an {alpha}-amylase and part of a large protein complex on the outer surface of the bacterial cell and plays a major role in carbohydrate acquisition by the animal gut microbiota. Presented here, the atomic structure of SusG has an unusual extended, bilobed structure composed of amylase at one end and an unprecedented internal carbohydrate-binding motif at the other. Structural studies further demonstrate that the carbohydrate-binding motif binds maltooligosaccharide distal to, and on the opposite side of, the amylase catalytic site. SusG has an additional starch-binding site on the amylase domain immediately adjacent to the active cleft. Mutagenesis analysis demonstrates that these two additional starch-binding sites appear to play a role in catabolism of insoluble starch. However, elimination of these sites has only a limited effect, suggesting that they may have a more important role in product exchange with other Sus components.

  13. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    International Nuclear Information System (INIS)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong

    2010-01-01

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  14. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    Energy Technology Data Exchange (ETDEWEB)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong, E-mail: puhongbin@xaut.edu.c [Xi' an University of Technology, Xi' an 710048 (China)

    2010-04-15

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 {mu}m and 0.7 {mu}m are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  15. Parents' social representations about adolescents' leisure

    Directory of Open Access Journals (Sweden)

    Antonino Manuel de Almeida Pereira

    2011-01-01

    Full Text Available En los Estados Unidos de América hay tres posiciones filosóficas antes de la recreación de los adolescentes (Larson y Seepersad, 2003: las actividades no estructuradas, las actividades estructuradas y la combinación de estas dos. Teniendo en cuenta la realidad de la sociedad que es la posición adoptada por los padres en Portugal para el ocio de sus hijos adolescentes? La presente investigación trató de identificar las representaciones que los padres tienen sobre el ocio de sus hijos. El estudio incidió sobre 70 padres de adolescentes que frecuentaban el 3er Curso de ESO en escuelas públicas de las ciudades portuguesas de Coimbra y de Santarém, a los cuales fueron realizadas entrevistas semiestructuradas. La técnica de tratamiento de la información utilizada fue el ¿análisis de contenido¿ (Bardin, 2008. Para la mayoría de los padres el ocio de sus hijos tiene un significado connotado con el desarrollo. Representan tiempos en los cuales los adolescentes deben experimentar un vasto abanico de experiencias orientadas por un conjunto de principios de modo a contribuir para su formación. Los entrevistados entienden, sobre todo, que deben ejercer un papel de modelación junto a sus hijos debiendo desarrollar conductas capaces de influenciar sus opciones y comportamientos. En términos de actividades a desarrollar durante el ocio de sus hijos, los encuestados privilegian, principalmente, el deporte, por razones de salud y por el hecho de tal práctica ser desarrollada en presencia de adultos que las coordinan u orientan. En resumen, podemos decir que los puntos de vista mencionados por los padres parecen ir un poco en el sentido de defensa de las actividades estructuradas.

  16. Realidades de mujeres que promueven organización y participación desde sus territorios, en una sociedad que intenta terminar con el conflicto armado

    Directory of Open Access Journals (Sweden)

    Martha Elena Saboya Ramírez

    2017-08-01

    Full Text Available Hoy en día en Colombia, mujeres residentes en María la Baja, municipio del departamento de Bolívar, persisten en sus procesos organizativos para atender al desarrollo de objetivos reivindicatorios con ocasión de las consecuencias y secuelas generadas por el conflicto armado. Sus interacciones, gestiones y movilizaciones ante el Estado, centran su atención en la búsqueda de la restauración de sus derechos y los de sus familias debido al desplazamiento. Pretenden lograr el retorno a sus tierras, contar con vivienda segura y servicios públicos, trabajar de manera digna y honrada, como siempre fue y ha sido su aspiración. En estos procesos identifican y vivencias nuevas formas de entender y comprender los fenómenos sociales, en consecuencia direccionan sus apuestas sociales e introducen cambios en sus entornos familiares y en su diario vivir.

  17. Declive de la función paterna y sus efectos en las dificultades de aprendizaje.

    OpenAIRE

    Alvarado Hermida, Carola Yolanda

    2015-01-01

    El presente estudio intenta lograr un entendimiento desde la perspectiva psicoanalítica y sus conceptos fundamentales, de las denominadas dificultades de aprendizaje, abordado desde los cambios sociales actuales específicamente el declive de la función paterna y sus efectos en el proceso de aprendizaje. Para esto iniciaremos en el capítulo I revisando el origen del concepto teórico de la función paterna desde el psicoanálisis en Freud y Lacan. Luego, en el capítulo II, realizaremos una ...

  18. La Asociación Latinoamericana de Sociología: una historia de sus primeros congresos

    Directory of Open Access Journals (Sweden)

    Blanco Alejandro

    2005-01-01

    Full Text Available El examen de las asociaciones nacionales y regionales de sociología de América Latina, de su estructura y composición como de sus transformaciones es, todavía hoy, una asignatura pendiente en la historia de la disciplina. Este trabajo reconstruye la historia de los primeros años de la Asociación Latinoamericana de Sociología, intentando caracterizar su contexto de emergencia, sus principales rasgos y su papel en la formación de la sociología de la región.

  19. Si/C and H coadsorption at 4H-SiC{0001} surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wachowicz, E., E-mail: elwira@ifd.uni.wroc.pl [Institute of Experimental Physics, University of Wrocław, Plac M. Borna 9, PL-50-204 Wrocław (Poland); Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawińskiego 5a, PL-02-106 Warsaw (Poland)

    2016-06-15

    Highlights: • Si on C-terminated and C on Si-terminated surface adsorb in the H{sub 3} hollow site. • The preferred adsorption site is in contrary to the stacking order of bulk crystal. • The presence of hydrogen increases the adsorption energy of Si/C. • Hydrogen weakens the bonds between the adsorbed Si or C and the surface. • Carbon adsorbs on top of the surface carbon on the C-terminated surface. • With both C and H on Si-terminated surface the surface state vanishes. - Abstract: Density functional theory (DFT) study of adsorption of 0.25 monolayer of either Si or C on 4H-SiC{0001} surfaces is presented. The adsorption in high-symmetry sites on both Si- and C-terminated surfaces was examined and the influence of the preadsorbed 0.25 ML of hydrogen on the Si/C adsorption was considered. It was found out that for Si on C-terminated surface and C on Si-terminated the most favourable is threefolded adsorption site on both clean and H-precovered surface. This is contrary to the bulk crystal stacking order which would require adsorption on top of the topmost surface atom. In those cases, the presence of hydrogen weakens the bonding of the adsorbate. Carbon on the C-terminated surface, only binds on-top of the surface atom. The C−C bond-length is almost the same for the clean surface and for one with H and equals to ∼1.33 Å which is shorter by ∼0.2 than in diamond. The analysis of the electronic structure changes under adsorption is also presented.

  20. Fluorocarbon based atomic layer etching of Si_3N_4 and etching selectivity of SiO_2 over Si_3N_4

    International Nuclear Information System (INIS)

    Li, Chen; Metzler, Dominik; Oehrlein, Gottlieb S.; Lai, Chiukin Steven; Hudson, Eric A.

    2016-01-01

    Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO_2 ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar"+ ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO_2 from the surface. In the present article, the authors describe controlled etching of Si_3N_4 and SiO_2 layers of one to several Angstroms using this cyclic ALE approach. Si_3N_4 etching and etching selectivity of SiO_2 over Si_3N_4 were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si_3N_4 were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si_3N_4 has a lower physical sputtering energy threshold than SiO_2, Si_3N_4 physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si_3N_4 to SiO_2 ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO_2 to Si_3N_4 etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si_3N_4 surfaces. This highly selective etching is explained by a lower carbon consumption of Si_3N_4 as compared to SiO_2. The comparison of C_4F_8 and CHF_3 only showed a difference in etching selectivity for FC depleted conditions. For FC accumulation conditions

  1. THE POLYMORPHISM OF THE SUS4 SUCROSE SYNTHASE DOMAIN SEQUENCES IN RUSSIAN, BELORUSSIAN AND KAZAKH POTATO CULTIVARS

    Directory of Open Access Journals (Sweden)

    M. A. Slugina

    2016-01-01

    Full Text Available The potato is one of the main strategic crops in the Russian Federation, Belarus and Kazakhstan. Currently, we have achieved significant advances in the understanding of metabolic mechanism of carbohydrate and interconversion «sucrose – starch» in potato tubers. Sucrose synthase (Sus is a key enzyme in the breakdown of sucrose. Sucrose synthase (Sus is catalyzing a reversible reaction of conversion sucrose and UDP into fructose and UDP-glucose. The identification and subsequent characterization of the genes encoding plant sucrose synthase is the first step towards understanding their physiological roles and metabolic mechanism involved in carbohydrate accumulation in potato tubers. In the present work the nucleotide and amino acid polymorphism of the Sus4 gene fragments containing sequences of the sucrose synthase domain were analyzed. Sus4 gene fragments (intron III – exon VI in 9 potato cultivars of Russian, Kazakh and Belarusian breeding were analyzed. The polymorphism of the Sus4 sucrose synthase domain sequences was first examined. The length of analyzed fragment varied from 977 b.p. (cultivars Favorit, Karasaiskii, Miras to 1013 b.p. (cultivars Zorochka, Manifest, Elisaveta, Bashkirskii. It was demonstrated that the examined sequences contained point mutations, as well as insertions and deletions. The common polymorphism level was 5.82%. It was shown that the examined sequences contained 58 SNPs and 4 indels. The most variable were introns IV (12.4% and V (9.18%. The most variable was exon IV. 7 allelic variants were detected. 6 different amino acid sequences specific to different varieties were also identified.

  2. Electrical properties of SiO{sub 2}/SiC interfaces on 2°-off axis 4H-SiC epilayers

    Energy Technology Data Exchange (ETDEWEB)

    Vivona, M., E-mail: marilena.vivona@imm.cnr.it [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy); Fiorenza, P. [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy); Sledziewski, T.; Krieger, M. [Friedrich-Alexander-University (FAU) Erlangen-Nuremberg, Department of Physics, Staudtstrasse 7/Bld. A3, D-91058 Erlangen (Germany); Chassagne, T.; Zielinski, M. [NOVASiC, Savoie Technolac, BP267, F-73375 Le Bourget-du-Lac Cedex (France); Roccaforte, F. [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy)

    2016-02-28

    Graphical abstract: - Highlights: • Processing and electrical characterization of MOS capacitors fabricated on 4H-SiC epilayers grown on 2°-off axis heavily doped substrates. • Excellent characteristics of the SiO{sub 2}/4H-SiC interface in terms of flatness, interface state density and oxide reliability. • Electrical behavior of the MOS devices comparable with that obtained for the state-of-the-art of 4°-off axis 4H-SiC material. • Demonstration of the maturity of the 2°-off axis material for application in 4H-SiC MOSFET device technology. - Abstract: In this paper, the electrical properties of the SiO{sub 2}/SiC interface on silicon carbide (4H-SiC) epilayers grown on 2°-off axis substrates were studied. After epilayer growth, chemical mechanical polishing (CMP) allowed to obtain an atomically flat surface with a roughness of 0.14 nm. Metal-oxide-semiconductor (MOS) capacitors, fabricated on this surface, showed an interface state density of ∼1 × 10{sup 12} eV{sup −1} cm{sup −2} below the conduction band, a value which is comparable to the standard 4°-off-axis material commonly used for 4H-SiC MOS-based device fabrication. Moreover, the Fowler–Nordheim and time-zero-dielectric breakdown analyses confirmed an almost ideal behavior of the interface. The results demonstrate the maturity of the 2°-off axis material for 4H-SiC MOSFET device fabrication.

  3. Unraveling the role of SiC or Si substrates in water vapor incorporation in SiO 2 films thermally grown using ion beam analyses

    Science.gov (United States)

    Corrêa, S. A.; Soares, G. V.; Radtke, C.; Stedile, F. C.

    2012-02-01

    The incorporation of water vapor in SiO 2 films thermally grown on 6H-SiC(0 0 0 1) and on Si (0 0 1) was investigated using nuclear reaction analyses. Water isotopically enriched in deuterium ( 2H or D) and in 18O was used. The dependence of incorporated D with the water annealing temperature and initial oxide thickness were inspected. The D amount in SiO 2/SiC structures increases continuously with temperature and with initial oxide thickness, being incorporated in the surface, bulk, and interface regions of SiO 2 films. However, in SiO 2/Si, D is observed mostly in near-surface regions of the oxide and no remarkable dependence with temperature or initial oxide thickness was observed. At any annealing temperature, oxygen from water vapor was incorporated in all depths of the oxide films grown on SiC, in contrast with the SiO 2/Si.

  4. Sensing performance of plasma-enhanced chemical vapor deposition SiC-SiO2-SiC horizontal slot waveguides

    NARCIS (Netherlands)

    Pandraud, G.; Margallo-Balbas, E.; Sarro, P.M.

    2012-01-01

    We have studied, for the first time, the sensing capabilities of plasma-enhanced chemical vapor deposition (PECVD) SiC-SiO2-SiC horizontal slot waveguides. Optical propagation losses were measured to be 23.9 dB?cm for the quasi-transverse magnetic mode. To assess the potential of this device as a

  5. High resolution investigation of the 30Si(þ, þ)30Si reaction

    NARCIS (Netherlands)

    Walinga, J.; Rinsvelt, H.A. van; Endt, P.M.

    The differential cross section for elastic scattering of protons on 30Si was measured with surface barrier counters at four angles. Thirty-six 30Si(þ, γ)31P resonances are known in the Ep=1–2MeV region. Fifteen of these were also observed in the 30Si(þ, þ)30Si reaction, with natural widths varying

  6. El médico auditor: Nueva especialidad y práctica profesional

    Directory of Open Access Journals (Sweden)

    Facultad de Medicina Revista

    1997-07-01

    Full Text Available Con la puesta en marcha de la ley 100 Y su implementación mediante decretos reglamentarios, ha irrumpido en la práctica médica una nueva modalidad de ejercicio médico. No se sorprenda de encontrar hurgando en sus historias clínicas a nuevas profesionales de la salud, quienes estarán investigando, diferentes pormenores sobre los casos clínicos manejados por Ud., con la acuciosidad, que envidiaría hasta un Sherlock Holmes, estarán tratando de encontrar justificación a sus decisiones científicas en términos de la pertinencia o no, de sus diagnósticos y exámenes paraclínicos, esquemas de tratamiento, si aplica normas institucionales de manejo clínico; adicionalmente, cruzaran sus datos de evolución y formulación, con los registros de enfermería. La revisaran las facturas de cobros y determinaran, si estas se ajustan a las decisiones médicas y observaran, si los costes son racionales o por el contrario, desbordados. Solicitarán algunos informes clínicos para respaldar decisiones especializadas o de alto costo, pero no se preocupe, jamás entraran en choque o exigencias con Ud., ni interferirán sus decisiones o sus esquemas de manejo. Finalmente, harán un informe a su respectiva EPS, o si encontraron irregularidades, dialogaran o informaran al director de la respectiva IPS.

  7. Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

    Science.gov (United States)

    Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2015-02-01

    Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

  8. LAS CREENCIAS SOBRE OBESIDAD DE NIÑOS Y NIÑAS EN EDAD ESCOLAR Y LAS DE SUS PROGENITORES

    Directory of Open Access Journals (Sweden)

    Hilda Patricia Núñez Rivas

    2013-01-01

    Full Text Available El propósito de este artículo es evidenciar, mediante el método etnográfico, las creencias sobre la obesidad de niños y niñas en edad escolar y las de sus progenitores, pertenecientes a una escuela urbana y pública de San José, Costa Rica. Los resultados apuntan hacia las creencias negativas de la niñez respecto a sus pares con obesidad y sus implicaciones psicosociales y afectivas. En relación con los progenitores se señalan las causas y estrategias de control, las implicaciones de la obesidad, referente a enfermedades físicas y emocionales; el papel del hogar y de la escuela en su prevención. Se concluye que los niños y las niñas creen que la obesidad no es una enfermedad, sino u na expresión fenotípica, a la cual le dan grado de relatividad o de escala y la consideran no deseable, resultado que concuerda con la de sus progenitores. Las niñas participantes con obesidad expresaron sus posiciones de defensa y molestia, en relación con experiencias burlescas. Al contrario de sus hijos e hijas, la mayoría de los progenitores sí cree que la obesidad es una enfermedad o un problema de salud o de estética. Además, estiman que esta se controla utilizando una dieta saludable y equilibrada, dando consejos sobre las consecuencias físicas y emocionales de la obesidad y ofreciendo modelos de personas saludables. Por lo tanto, los progenitores y el personal docente creen que la escuela poco puede hacer respecto a la alimentación saludable del alumnado, pues el hogar es el lugar que tiene un papel primordial.

  9. Actitud del estudiante de ingeniería hacia sus errores en el aprendizaje de la matemática

    Directory of Open Access Journals (Sweden)

    Lissette Franchi Boscán

    2011-09-01

    Full Text Available Bajo cualquier esquema de enseñanza-aprendizaje de la matemática, cuando al alumno se le señalan errores en su trabajo, puede, en general, adoptar tres tipos de actitud: una actitud negativa, bajo la cual el alumno considera que sus errores son sencillamente un síntoma de su fracaso; una actitud neutra o indiferente ante sus errores; o una actitud positiva, considerándolos como un medio para aprender y planteándose como reto el superarlos. Este artículo muestra una investigación que abordó el estudio de actitudes vinculadas al proceso de aprendizaje de la matemática. Su objetivo fue describir la actitud que el estudiante de ingeniería de la Uni- versidad del Zulia exhibe frente a sus errores cuando aprende matemática. La sus tentación teórica se baso en Brousseau (2001, Briñol et al. (2007 y los autores Pallí y Martínez (2004. Se utilizó una escala AEAM (Actitud hacia el Error del Alumno de Matemática, tipo Likert con 6 alternativas de respuesta que consta de 36 ítems, en su segunda versión, actualizada por los autores. El instrumento fue validado mediante juicio de expertos y se determinó que era de alta confiabilidad, con un alpha de Cronbach de 0.9073. Se concluyó que los participantes, en su mayoría, mostraron una actitud moderadamente positiva hacia sus errores, que al no estar ubicada en el extremo positivo deseable refleja una actitud débil que no garantiza una conducta adecuada hacia los errores, pero que sin embargo es sus ceptible de ser mejorada hacia una actitud francamente positiva.

  10. Las redes del narcotráfico y sus interacciones: un modelo teórico

    Directory of Open Access Journals (Sweden)

    Leonardo Raffo López

    2015-06-01

    Full Text Available En este artículo se propone un modelo teórico que ayuda a entender el funcionamiento de las redes de defensa y corrupción del narcotráfico. Con base en las teorías de juegos y de redes se analizan las interacciones estratégicas entre los narcotraficantes y sus agentes. Se prueba que la densidad de las redes es un determinante fundamental de la probabilidad de supervivencia de los narcotraficantes y de los salarios que pagan a sus hombres; y que la eficacia de las políticas de represión de la oferta depende de la densidad de las redes.

  11. La política nacional del Ecuador para la Antártica y sus mecanismos de aplicación

    OpenAIRE

    Moreano, H.R.

    1989-01-01

    La Primera Expedición Ecuatoriana a la Antártica condujo una serie de observaciones científicas en el Paso Drake y Estrecho Bransfield durante el verano austral 1987-88, cuyos resultados se prublicaron en el "Acta Antártica Ecuatoriana" en marzo 89, de esta manera el Ecuador hacía realidad sus intereses en la Antártica. Se propone un concepto de la Política Nacional para la Antártica, basada en los lineamientos y consideraciones del Tratado Antártico y sus convenciones, así como también sus m...

  12. Removal of C and SiC from Si and FeSi during ladle refining and solidification

    Energy Technology Data Exchange (ETDEWEB)

    Klevan, Ole Svein

    1997-12-31

    The utilization of solar energy by means of solar cells requires the Si to be very pure. The purity of Si is important for other applications as well. This thesis mainly studies the total removal of carbon from silicon and ferrosilicon. The decarburization includes removal of SiC particles by stirring and during casting in addition to reduction of dissolved carbon by gas purging. It was found that for three commercial qualities of FeSi75, Refined, Gransil, and Standard lumpy, the refined quality is lowest in carbon, followed by Gransil and Standard. A decarburization model was developed that shows the carbon removal by oxidation of dissolved carbon to be a slow process at atmospheric pressure. Gas stirring experiments have shown that silicon carbide particles are removed by transfer to the ladle wall. The casting method of ferrosilicon has a strong influence on the final total carbon content in the commercial alloy. Shipped refined FeSi contains about 100 ppm total carbon, while the molten alloy contains roughly 200 ppm. The total carbon out of the FeSi-furnace is about 1000 ppm. It is suggested that low values of carbon could be obtained on an industrial scale by injection of silica combined with the use of vacuum. Also, the casting system could be designed to give low carbon in part of the product. 122 refs., 50 figs., 24 tabs.

  13. Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

    International Nuclear Information System (INIS)

    Pi, X.D.; Coleman, P.G.; Harding, R.; Davies, G.; Gwilliam, R.M.; Sealy, B.J.

    2003-01-01

    Positron annihilation spectroscopy has been employed to study changes in the interface region between nanocrystalline Si and SiO 2 , following annealing between 400 deg. C and 900 deg. C in nitrogen or oxygen. With the support of photoluminescence spectroscopy we find that nitrogen and oxygen are trapped in voids at the interface at low temperatures. At temperatures above 700 deg. C both nitrogen and oxygen react with Si nanocrystals, and the resulting volume increase introduces stress in the SiO 2 matrix which is relaxed by the shrinkage of its intrinsic open volume. Oxygen appears to enhance Si diffusion in SiO 2 so that the agglomeration of Si nanocrystals occurs more readily during annealing in oxygen than in nitrogen

  14. Heteroepitaxy of zinc-blende SiC nano-dots on Si substrate by organometallic ion beam

    International Nuclear Information System (INIS)

    Matsumoto, T.; Kiuchi, M.; Sugimoto, S.; Goto, S.

    2006-01-01

    The self-assembled SiC nano-dots were fabricated on Si(111) substrate at low-temperatures using the organometallic ion beam deposition technique. The single precursor of methylsilicenium ions (SiCH 3 + ) with the energy of 100 eV was deposited on Si(111) substrate at 500, 550 and 600 deg. C. The characteristics of the self-assembled SiC nano-dots were analyzed by reflection high-energy electron diffraction (RHEED), Raman spectroscopy and atomic force microscope (AFM). The RHEED patterns showed that the crystal structure of the SiC nano-dots formed on Si(111) substrate was zinc-blende SiC (3C-SiC) and it was heteroepitaxy. The self-assembled SiC nano-dots were like a dome in shape, and their sizes were the length of 200-300 nm and the height of 10-15 nm. Despite the low-temperature of 500 deg. C as SiC crystallization the heteroepitaxial SiC nano-dots were fabricated on Si(111) substrate using the organometallic ion beam

  15. Electrical resistivity and thermal conductivity of SiC/Si ecoceramics prepared from sapele wood biocarbon

    Science.gov (United States)

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Gutierrez-Pardo, A.; Ramirez-Rico, J.

    2012-10-01

    Samples of β-SiC/Si ecoceramics with a silicon concentration of ˜21 vol % have been prepared using a series of consecutive procedures (carbonization of sapele wood biocarbon, synthesis of high-porosity biocarbon with channel-type pores, infiltration of molten silicon into empty channels of the biocarbon, formation of β-SiC, and retention of residual silicon in channels of β-SiC). The electrical resistivity ρ and thermal conductivity κ of the β-SiC/Si ecoceramic samples have been measured in the temperature range 5-300 K. The values of ρ{Si/chan}( T) and κ{Si/chan}( T) have been determined for silicon Sichan located in β-SiC channels of the synthesized β-SiC/Si ecoceramics. Based on the performed analysis of the obtained results, the concentration of charge carriers (holes) in Sichan has been estimated as p ˜ 1019 cm-3. The factors that can be responsible for such a high value of p have been discussed. The prospects for practical application of β-SiC/Si ecoceramics have been considered.

  16. Toxicity of herbal medicines with interest to SUS: a review

    Directory of Open Access Journals (Sweden)

    Ciciane Pereira Marten Fernandes

    2016-11-01

    Full Text Available Abstract: In Brazil, ever since colonization plants have been used as natural products; thus, the National Health Surveillance Agency has been establishing rules for herbal medicine regulation; in this light, 71 plant species were chosen and empirically used in the country to investigate their medicinal properties. Currently, 12 of these 71 plants have been approved to be used in SUS (Public Health System, the remaining species still need further research. Thusly, this review aimed to seek information from toxicological studies on the plants that have not yet been officially approved, to stimulate new research in the field, promoting an economical and functional impact. In order to obtain the information, the keywords plant name + toxicity and/or toxicological studies were searched in the most prominent databases, both in English and in Portuguese. The ten plants with the most references were included in this review. Among the ten plants assessed, three have all the required studies required by the National Health Surveillance Agency, two of which we recommend the immediate adoption by SUS. In general, three plants have a determined LD50, nine have reproductive toxicity data, and five have not yet shown any sign of toxicity.

  17. Ordered GeSi nanorings grown on patterned Si (001 substrates

    Directory of Open Access Journals (Sweden)

    Ma Yingjie

    2011-01-01

    Full Text Available Abstract An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated. Long-range ordered GeSi nanorings with 430 nm period were grown on patterned Si (001 substrates by molecular beam epitaxy. The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes. Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings. PACS code1·PACS code2·more Mathematics Subject Classification (2000 MSC code1·MSC code2·more

  18. White photoluminescence from Si/SiO{sub 2} nanostructured film

    Energy Technology Data Exchange (ETDEWEB)

    Duong, P.H.; Ngan, N.T.T.; Tuan, C.A. [Institute of Materials Science, Vietnamese Academy of Science and Technology, 18 Hoang Quoc Viet, Hanoi (Viet Nam); Huy, P.T. [International Training Institute of Materials Science, Hanoi University of Technology, 1 Dai Co Viet, Hanoi (Viet Nam); Itoh, T. [Graduate School of Engineering Science, Osaka University, Toyonaka (Japan)

    2008-12-15

    We present in this work the results of PL measurement of Si-NC embedded in Si/SiO{sub 2} multilayer system. A very intense broad luminescence band was observed in the sample under illumination in vacuum by UV laser line. The PL intensity enhancement and quenching effect observed in different ambients can be attributed to the energy exchange from NC to MO. The storage of the annealed sample in vacuum for a long time drastically changed the PL properties of Si-NC. The origin of these phenomena will be discussed. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Status and prospects for SiC-SiC composite materials development for fusion applications

    International Nuclear Information System (INIS)

    Sharafat, S.; Jones, R.H.; Kohyama, A.; Fenici, P.

    1995-01-01

    Silicon carbide (SiC) composites are very attractive for fusion applications because of their low afterheat and low activation characteristics coupled with excellent high temperature properties. These composites are relatively new materials that will require material development as well as evaluation of hermiticity, thermal conductivity, radiation stability, high temperature strength, fatigue, thermal shock, and joining techniques. The radiation stability of SiC-SiC composites is a critical aspect of their application as fusion components and recent results will be reported. Many of the non-fusion specific issues are under evaluation by other ceramic composite development programs, such as the US national continuous fiber ceramic composites.The current development status of various SiC-SiC composites research and development efforts is given. Effect of neutron irradiation on the properties of SiC-SiC composite between 500 and 1200 C are reported. Novel high temperature properties specific to ceramic matrix composite (CMC) materials are discussed. The chemical stability of SiC is reviewed briefly. Ongoing research and development efforts for joining CMC materials including SiC-SiC composites are described. In conclusion, ongoing research and development efforts show extremely promising properties and behavior for SiC-SiC composites for fusion applications. (orig.)

  20. Si K-edge XANES study of SiOxCyHz amorphous polymeric materials

    International Nuclear Information System (INIS)

    Chaboy, J.; Barranco, A.; Yanguas-Gil, A.; Yubero, F.; Gonzalez-Elipe, A. R.

    2007-01-01

    This work reports on x-ray absorption spectroscopy study at the Si K edge of several amorphous SiO x C y H z polymers prepared by plasma-enhanced chemical-vapor deposition with different C/O ratios. SiO 2 and SiC have been used as reference materials. The comparison of the experimental Si K-edge x-ray absorption near-edge structure spectra with theoretical computations based on multiple scattering theory has allowed us to monitor the modification of the local coordination around Si as a function of the overall C/O ratio in this kind of materials

  1. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping

    2015-05-13

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages. The SiHJ was designed and fabricated into both photoanode and photocathode with high oxygen and hydrogen evolution efficiency, respectively, by simply coating of a thin layer of catalytic materials. The SiHJ photoanode with sol-gel NiOx as the catalyst shows a current density of 21.48 mA/cm2 at the equilibrium water oxidation potential. The SiHJ photocathode with 2 nm sputter-coated Pt catalyst displays excellent hydrogen evolution performance with an onset potential of 0.640 V and a solar to hydrogen conversion efficiency of 13.26%, which is the highest ever reported for Si-based photocathodes. © 2015 American Chemical Society.

  2. Microstructural optimization of high temperature SiC/SiC composites by nite process

    International Nuclear Information System (INIS)

    Shimoda, K.; Park, J.S.; Hinoki, T.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites are one of the promising structural materials for future fusion reactor because of the excellent potentiality in thermal and mechanical properties under very severe environment including high temperature and high energy neutron bombardment. For fusion-grade SiC/SiC composites, high-crystallinity and near-stoichiometric characteristic are required to keep excellent stability against neutron irradiation. The realization of the reactor will be strongly depend on optimization of SiC/SiC composites microstructure, particularly in regard to the materials and processes used for the fiber, interphase and matrix constituents. One of the important accomplishments is the new process, called nano-particle infiltration and transient eutectic phase (NITE) process developed in our group. The microstructure of NITE-SiC/SiC composites, such as fiber volume fraction, porosity and type of pores, can be controlled precisely by the selection of sintering temperature/applied stress history. The objective of this study is to investigate thermal stability and mechanical properties of NITE-SiC/SiC composites at high-temperature. Two kinds of highly-densified SiC/SiC composites with the difference of fiber volume fraction were prepared, and were subjected to exposure tests from 1000 deg. C to 1500 deg. C in an argon-oxygen gas mixture with an oxygen partial pressure of 0.1 Pa. The thermal stability of the composites was characterized through mass change and TEM/SEM observation. The in-situ tensile tests at 1300 deg. C and 1500 deg. C were carried out in the same atmosphere. Most of SiC/SiC composites, even for the advanced CVI-SiC/SiC composites with multi-layered SiC/C inter-phases, underwent reduction in the maximum strength by about 20% at 1300 deg. C. In particular, this reduction was attributed to a slight burnout of the carbon interphase due to oxygen impurities in test atmosphere. However, there was no significant degradation for

  3. Microstructural optimization of high temperature SiC/SiC composites by nite process

    Energy Technology Data Exchange (ETDEWEB)

    Shimoda, K. [Kyoto Univ., Graduate School of Energy Science (Japan); Park, J.S. [Kyoto Univ., Institute of Advanced Energy (Japan); Hinoki, T.; Kohyama, A. [Kyoto Univ., lnstitute of Advanced Energy, Gokasho, Uji (Japan)

    2007-07-01

    Full text of publication follows: SiC/SiC composites are one of the promising structural materials for future fusion reactor because of the excellent potentiality in thermal and mechanical properties under very severe environment including high temperature and high energy neutron bombardment. For fusion-grade SiC/SiC composites, high-crystallinity and near-stoichiometric characteristic are required to keep excellent stability against neutron irradiation. The realization of the reactor will be strongly depend on optimization of SiC/SiC composites microstructure, particularly in regard to the materials and processes used for the fiber, interphase and matrix constituents. One of the important accomplishments is the new process, called nano-particle infiltration and transient eutectic phase (NITE) process developed in our group. The microstructure of NITE-SiC/SiC composites, such as fiber volume fraction, porosity and type of pores, can be controlled precisely by the selection of sintering temperature/applied stress history. The objective of this study is to investigate thermal stability and mechanical properties of NITE-SiC/SiC composites at high-temperature. Two kinds of highly-densified SiC/SiC composites with the difference of fiber volume fraction were prepared, and were subjected to exposure tests from 1000 deg. C to 1500 deg. C in an argon-oxygen gas mixture with an oxygen partial pressure of 0.1 Pa. The thermal stability of the composites was characterized through mass change and TEM/SEM observation. The in-situ tensile tests at 1300 deg. C and 1500 deg. C were carried out in the same atmosphere. Most of SiC/SiC composites, even for the advanced CVI-SiC/SiC composites with multi-layered SiC/C inter-phases, underwent reduction in the maximum strength by about 20% at 1300 deg. C. In particular, this reduction was attributed to a slight burnout of the carbon interphase due to oxygen impurities in test atmosphere. However, there was no significant degradation for

  4. Growth of CNTs on Fe-Si catalyst prepared on Si and Al coated Si substrates

    International Nuclear Information System (INIS)

    Teng, F-Y; Ting, J-M; Sharma, Sahendra P; Liao, Kun-Hou

    2008-01-01

    In this paper we report the effect of Al interlayers on the growth characteristics of carbon nanotubes (CNTs) using as-deposited and plasma etched Fe-Si catalyst films as the catalysts. Al interlayers having various thicknesses ranging from 2 to 42 nm were deposited on Si substrates prior to the deposition of Fe-Si catalysts. It was found that the Al interlayer diffuses into the Fe-Si catalyst during the plasma etching prior to the CNT growth, leading to the swelling and amorphization of the catalyst. This allows enhanced carbon diffusion in the catalyst and therefore a faster growth rate of the resulting CNTs. It was also found that use of an Al interlayer having a thickness of ∼3 ± 1 nm is most effective. Due to the effectiveness of this, the normally required catalyst etching is no longer needed for the growth of CNTs

  5. Growth of CNTs on Fe-Si catalyst prepared on Si and Al coated Si substrates.

    Science.gov (United States)

    Teng, F-Y; Ting, Jyh-Ming; Sharma, Sahendra P; Liao, Kun-Hou

    2008-03-05

    In this paper we report the effect of Al interlayers on the growth characteristics of carbon nanotubes (CNTs) using as-deposited and plasma etched Fe-Si catalyst films as the catalysts. Al interlayers having various thicknesses ranging from 2 to 42 nm were deposited on Si substrates prior to the deposition of Fe-Si catalysts. It was found that the Al interlayer diffuses into the Fe-Si catalyst during the plasma etching prior to the CNT growth, leading to the swelling and amorphization of the catalyst. This allows enhanced carbon diffusion in the catalyst and therefore a faster growth rate of the resulting CNTs. It was also found that use of an Al interlayer having a thickness of ∼3 ± 1 nm is most effective. Due to the effectiveness of this, the normally required catalyst etching is no longer needed for the growth of CNTs.

  6. Wafer-scale high-throughput ordered arrays of Si and coaxial Si/Si(1-x)Ge(x) wires: fabrication, characterization, and photovoltaic application.

    Science.gov (United States)

    Pan, Caofeng; Luo, Zhixiang; Xu, Chen; Luo, Jun; Liang, Renrong; Zhu, Guang; Wu, Wenzhuo; Guo, Wenxi; Yan, Xingxu; Xu, Jun; Wang, Zhong Lin; Zhu, Jing

    2011-08-23

    We have developed a method combining lithography and catalytic etching to fabricate large-area (uniform coverage over an entire 5-in. wafer) arrays of vertically aligned single-crystal Si nanowires with high throughput. Coaxial n-Si/p-SiGe wire arrays are also fabricated by further coating single-crystal epitaxial SiGe layers on the Si wires using ultrahigh vacuum chemical vapor deposition (UHVCVD). This method allows precise control over the diameter, length, density, spacing, orientation, shape, pattern and location of the Si and Si/SiGe nanowire arrays, making it possible to fabricate an array of devices based on rationally designed nanowire arrays. A proposed fabrication mechanism of the etching process is presented. Inspired by the excellent antireflection properties of the Si/SiGe wire arrays, we built solar cells based on the arrays of these wires containing radial junctions, an example of which exhibits an open circuit voltage (V(oc)) of 650 mV, a short-circuit current density (J(sc)) of 8.38 mA/cm(2), a fill factor of 0.60, and an energy conversion efficiency (η) of 3.26%. Such a p-n radial structure will have a great potential application for cost-efficient photovoltaic (PV) solar energy conversion. © 2011 American Chemical Society

  7. Reduction in interface defect density in p-BaSi2/n-Si heterojunction solar cells by a modified pretreatment of the Si substrate

    Science.gov (United States)

    Yamashita, Yudai; Yachi, Suguru; Takabe, Ryota; Sato, Takuma; Emha Bayu, Miftahullatif; Toko, Kaoru; Suemasu, Takashi

    2018-02-01

    We have investigated defects that occurred at the interface of p-BaSi2/n-Si heterojunction solar cells that were fabricated by molecular beam epitaxy. X-ray diffraction measurements indicated that BaSi2 (a-axis-oriented) was subjected to in-plane compressive strain, which relaxed when the thickness of the p-BaSi2 layer exceeded 50 nm. Additionally, transmission electron microscopy revealed defects in the Si layer near steps that were present on the Si(111) substrate. Deep level transient spectroscopy revealed two different electron traps in the n-Si layer that were located at 0.33 eV (E1) and 0.19 eV (E2) below the conduction band edge. The densities of E1 and E2 levels in the region close to the heterointerface were approximately 1014 cm-3. The density of these electron traps decreased below the limits of detection following Si pretreatment to remove the oxide layers from the n-Si substrate, which involved heating the substrate to 800 °C for 30 min under ultrahigh vacuum while depositing a layer of Si (1 nm). The remaining traps in the n-Si layer were hole traps located at 0.65 eV (H1) and 0.38 eV (H2) above the valence band edge. Their densities were as low as 1010 cm-3. Following pretreatment, the current versus voltage characteristics of the p-BaSi2/n-Si solar cells under AM1.5 illumination were reproducible with conversion efficiencies beyond 5% when using a p-BaSi2 layer thickness of 100 nm. The origin of the H2 level is discussed.

  8. Las actividades físico recreativas como vía para favorecer la integración del adulto mayor a la comunidad

    Directory of Open Access Journals (Sweden)

    Isaac Elizardo Crespo Cruz

    2011-06-01

    Full Text Available Por medio de las actividades físico recreativas el hombre tiene la posibilidad de expresar espontáneamente sus emociones, romper con la rutina, reducir estrés, integrarse socialmente, descubrir sus aptitudes, ejercitar sus habilidades, desarrollar su capacidad creadora, contrarrestar hábitos antisociales y nocivos para su salud física y mental. Las actividades físico recreativas como opciones recreativas brindan un arma adecuada para los que de una forma u otra están inmersos en buscar las vías que propicien el incremento de la participación del adulto mayor en las actividades de la comunidad. La poca asistencia del adulto mayor a las actividades deportivas y recreativas que se realizan en las comunidades es algo muy generalizado en el panorama venezolano, específicamente, municipio de Piar, Estado Monagas. Para darle solución a esta situación, se realizó un estudio exploratorio de los motivos por los cuales el adulto mayor no participa en las actividades recreativas en la comunidad El Crucero de Aparicio perteneciente al municipio Piar, Estado Monagas, donde se obtuvo como resultado fundamentalmente, el no sentirse estimulado por las mismas, planteando que no existían actividades que se correspondieran con sus gustos y preferencias. El contenido de las actividades físico recreativas aquí recogidas permitieron que los adultos mayores residentes en el Crucero de Aparicio comenzaran a participar en ellas y de esta forma elevaron su calidad de vida al sentirse atendidos y tenidos en cuenta pues las mismas están acordes con sus intereses y edad.

  9. Formation of AlFeSi phase in AlSi12 alloy with Ce addition

    Directory of Open Access Journals (Sweden)

    S. Kores

    2012-04-01

    Full Text Available The influence of cerium addition on the solidification sequence and microstructure constituents of the Al-Si alloys with 12,6 mass % Si was examined. The solidification was analyzed by a simple thermal analysis. The microstructures were examined with conventional light and scanning electron microscopy. Ternary AlSiCe phase was formed in the Al-Si alloys with added cerium during the solidification process. AlSiCe and β-AlFeSi phases solidified together in the region that solidified the last. Cerium addition influenced on the morphology of the α-AlFeSi phase solidification.

  10. Crystallization behavior of Li2O-SiO2, Na2O-SiO2 and Na2O-CaO-SiO2 glasses; Li2O-SiO2, Na2O-SiO2, Na2O-CaO-SiO2 kei glass no kessho sekishutsu kyodo

    Energy Technology Data Exchange (ETDEWEB)

    Tsutsumi, K.; Otake, J.; Nagasaka, T.; Hino, M. [Tohoku University, Sendai (Japan)

    1998-06-01

    It has been known that crystallization of mold powder is effective on the disturbance of heat transfer between mold and solidified shell in production of middle carbon steel slabs in continuous casting process. But it has not yet been made clear which composition of mold powder is the most suitable for crystallization. The crystallization behavior of Li2O-SiO2, Na2O-SiO2 and Na2O-CaO-SiO2 glasses was observed by differential thermal analysis (DTA) and hot-thermocouple methods with DTA in the present work. As a result, addition of alkaline metal and alkaline earth metal oxides to SiO2 increased the critical cooling rate for glass formation in binary system of Li2O-SiO2 and Na2O-SiO2 and Li2O-SiO2 system crystallized easier than Na2O-SiO2 system. In ternary system of Na2O-CaO-SiO2, addition of Na2O hurried the critical cooling rate at CaO/SiO2=0.93 mass ratio, but the rate was almost constant in the composition range of more than 15 mass% Na2O. The slag of CaO/SiO2=0.93 made the rate faster than the slag of CaO/SiO2=0.47 at constant content of 10mass% Na2O. 17 refs., 10 figs., 3 tabs.

  11. Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

    Directory of Open Access Journals (Sweden)

    Wei-Ting eLai

    2016-02-01

    Full Text Available We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90 nm, the SiO2 thickness (3−4 nm, and as well the SiGe-shell thickness (2−15 nm has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5 in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge MOS nanoelectronic and nanophotonic applications.

  12. Thermally induced formation of SiC nanoparticles from Si/C/Si multilayers deposited by ultra-high-vacuum ion beam sputtering

    International Nuclear Information System (INIS)

    Chung, C-K; Wu, B-H

    2006-01-01

    A novel approach for the formation of SiC nanoparticles (np-SiC) is reported. Deposition of Si/C/Si multilayers on Si(100) wafers by ultra-high-vacuum ion beam sputtering was followed by thermal annealing in vacuum for conversion into SiC nanoparticles. The annealing temperature significantly affected the size, density, and distribution of np-SiC. No nanoparticles were formed for multilayers annealed at 500 0 C, while a few particles started to appear when the annealing temperature was increased to 700 0 C. At an annealing temperature of 900 0 C, many small SiC nanoparticles, of several tens of nanometres, surrounding larger submicron ones appeared with a particle density approximately 16 times higher than that observed at 700 0 C. The higher the annealing temperature was, the larger the nanoparticle size, and the higher the density. The higher superheating at 900 0 C increased the amount of stable nuclei, and resulted in a higher particle density compared to that at 700 0 C. These particles grew larger at 900 0 C to reduce the total surface energy of smaller particles due to the higher atomic mobility and growth rate. The increased free energy of stacking defects during particle growth will limit the size of large particles, leaving many smaller particles surrounding the large ones. A mechanism for the np-SiC formation is proposed in this paper

  13. Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC.

    Science.gov (United States)

    Jia, Yuping; Sun, Xiaojuan; Shi, Zhiming; Jiang, Ke; Liu, Henan; Ben, Jianwei; Li, Dabing

    2018-05-28

    Silicon carbide (SiC) with epitaxial graphene (EG/SiC) shows a great potential in the applications of electronic and photoelectric devices. The performance of devices is primarily dependent on the interfacial heterojunction between graphene and SiC. Here, the band structure of the EG/SiC heterojunction is experimentally investigated by Kelvin probe force microscopy. The dependence of the barrier height at the EG/SiC heterojunction to the initial surface state of SiC is revealed. Both the barrier height and band bending tendency of the heterojunction can be modulated by controlling the surface state of SiC, leading to the tuned carrier transport behavior at the EG/SiC interface. The barrier height at the EG/SiC(000-1) interface is almost ten times that of the EG/SiC(0001) interface. As a result, the amount of carrier transport at the EG/SiC(000-1) interface is about ten times that of the EG/SiC(0001) interface. These results offer insights into the carrier transport behavior at the EG/SiC heterojunction by controlling the initial surface state of SiC, and this strategy can be extended in all devices with graphene as the top layer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. NIMROD Simulations of the HIT-SI and HIT-SI3 Devices

    Science.gov (United States)

    Morgan, Kyle; Jarboe, Tom; Hossack, Aaron; Chandra, Rian; Everson, Chris

    2017-10-01

    The Helicity Injected Torus with Steady Inductive helicity injection (HIT-SI) experiment uses a set of inductively driven helicity injectors to apply non-axisymmetric current drive on the edge of the plasma, driving an axisymmetric spheromak equilibrium in a central confinement volume. Significant improvements have been made to extended MHD modeling of HIT-SI, with both the resolution of disagreement at high injector frequencies in HIT-SI in addition to successes with the new upgraded HIT-SI3 device. Previous numerical studies of HIT-SI, using a zero-beta eMHD model, focused on operations with a drive frequency of 14.5 kHz, and found reduced agreement with both the magnetic profile and current amplification at higher frequencies (30-70 kHz). HIT-SI3 has three helicity injectors which are able to operate with different mode structures of perturbations through the different relative temporal phasing of the injectors. Simulations that allow for pressure gradients have been performed in the parameter regimes of both devices using the NIMROD code and show improved agreement with experimental results, most notably capturing the observed Shafranov-shift due to increased beta observed at higher finj in HIT-SI and the variety of toroidal perturbation spectra available in HIT-SI3. This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Fusion Energy Sciences under Award Number DE-FG02- 96ER54361.

  15. Non-switching to switching transferring mechanism investigation for Ag/SiO x /p-Si structure with SiO x deposited by HWCVD

    Science.gov (United States)

    Liu, Yanhong; Wang, Ruoying; Li, Zhongyue; Wang, Song; Huang, Yang; Peng, Wei

    2018-04-01

    We proposed and fabricated an Ag/SiO x /p-Si sandwich structure, in which amorphous SiO x films were deposited through hot wire chemical vapor deposition (HWCVD) using tetraethylorthosilicate (TEOS) as Si and O precursor. Experimental results indicate that the I–V properties of this structure transfer from non-switching to switching operation as the SiO x deposition temperature increased. The device with SiO x deposited at high deposition temperature exhibits typical bipolar switching properties, which can be potentially used in resistive switching random accessible memory (RRAM). The transferring mechanism from non-switching to switching can be ascribed to the change of structural and electronic properties of SiO x active layer deposited at different temperatures, as evidenced by analyzing FTIR spectrum and fitting its I–V characteristics curves. This work demonstrates a safe and practicable low-temperature device-grade SiO x film deposition technology by conducting HWCVD from TEOS.

  16. SI Notes.

    Science.gov (United States)

    Nelson, Robert A.

    1983-01-01

    Discusses legislation related to SI (International Systems of Units) in the United States. Indicates that although SI metric units have been officially recognized by law in the United States, U.S. Customary Units have never received a statutory basis. (JN)

  17. Polarized luminescence of nc-Si-SiO x nanostructures on silicon substrates with patterned surface

    Science.gov (United States)

    Michailovska, Katerina; Mynko, Viktor; Indutnyi, Ivan; Shepeliavyi, Petro

    2018-05-01

    Polarization characteristics and spectra of photoluminescence (PL) of nc-Si-SiO x structures formed on the patterned and plane c-Si substrates are studied. The interference lithography with vacuum chalcogenide photoresist and anisotropic wet etching are used to form a periodic relief (diffraction grating) on the surface of the substrates. The studied nc-Si-SiO x structures were produced by oblique-angle deposition of Si monoxide in vacuum and the subsequent high-temperature annealing. The linear polarization memory (PM) effect in PL of studied structure on plane substrate is manifested only after the treatment of the structures in HF and is explained by the presence of elongated Si nanoparticles in the SiO x nanocolumns. But the PL output from the nc-Si-SiO x structure on the patterned substrate depends on how this radiation is polarized with respect to the grating grooves and is much less dependent on the polarization of the exciting light. The measured reflection spectra of nc-Si-SiO x structure on the patterned c-Si substrate confirmed the influence of pattern on the extraction of polarized PL.

  18. The Degradation Behavior of SiCf/SiO2 Composites in High-Temperature Environment

    Science.gov (United States)

    Yang, Xiang; Cao, Feng; Qing, Wang; Peng, Zhi-hang; Wang, Yi

    2018-04-01

    SiCf/SiO2 composites had been fabricated efficiently by Sol-Gel method. The oxidation behavior, thermal shock property and ablation behavior of SiCf/SiO2 composites was investigated. SiCf/SiO2 composites showed higher oxidation resistance in oxidation atmosphere, the flexural strength retention ratio was larger than 90.00%. After 1300 °C thermal shock, the mass retention ratio was 97.00%, and the flexural strength retention ratio was 92.60%, while after 1500 °C thermal shock, the mass retention ratio was 95.37%, and the flexural strength retention ratio was 83.34%. After 15 s ablation, the mass loss rate was 0.049 g/s and recession loss rate was 0.067 mm/s. The SiO2 matrix was melted in priority and becomes loosen and porous. With the ablation going on, the oxides were washed away by the shearing action of the oxyacetylene flame. The evaporation of SiO2 took away large amount of heat, which is also beneficial to the protection for SiCf/SiO2 composites.

  19. Computed tomography in Brazil: frequency and pattern of usage among inpatients of the Unified Health System (SUS)

    International Nuclear Information System (INIS)

    Dovales, Ana Cristina M.; Souza, Andressa A. de; Veiga, Lene H.S.

    2015-01-01

    This paper shows the frequency, pattern and trend of computed tomography use in inpatients of the Brazilian public health care system (SUS), from 2008 to 2011. Data were extracted from an Internet database provided by SUS. Head/neck examinations were the most frequent type of CT over the study period. The use of CT increased over time, with the greatest increase being observed for CT of extremities. (author)

  20. Metodologia de construção de um painel de indicadores para o monitoramento e a avaliação da gestão do SUS Methodology for construction of a panel of indicators for monitoring and evaluation of unified health system (SUS management

    Directory of Open Access Journals (Sweden)

    Edson Mamoru Tamaki

    2012-04-01

    Full Text Available Este estudo teve como objetivo desenvolver uma metodologia de construção de um Painel de Monitoramento e Avaliação da Gestão do Sistema Único de Saúde (SUS. O processo participativo utilizado e a sistematização realizada permitiram identificar uma estratégia efetiva para a construção de instrumentos de gestão em parceria entre pesquisadores, instituições acadêmicas e gestores do SUS. A sistematização final do Painel selecionou indicadores da gestão do SUS em termos de Demandas, Insumos, Processos, Produtos e Resultados de forma a disponibilizar um instrumento simples, ágil e útil para a avaliação em qualquer instância de gestão e mais transparente e de mais fácil comunicação com todos os interessados na tomada de decisão. Tomar a gestão do SUS como objeto destes processos e práticas em seus aspectos normativos possibilitou o diálogo entre teorias sistêmicas e aquelas que consideram a centralidade do ator social no processo de tomada de decisão.This study sought to develop methodology for the construction of a Panel for the Monitoring and Evaluation of Management of the Unified Health System (SUS. The participative process used in addition to the systematization conducted made it possible to identify an effective strategy for building management tools in partnership with researchers, academic institutions and managers of the SUS. The final systematization of the Panel selected indicators for the management of the SUS in terms of Demand, Inputs, Processes, Outputs and Outcomes in order to provide a simple, versatile and useful tool for evaluation at any level of management and more transparent and easier communication with all stakeholders in decision-making. Taking the management of the SUS as the scope of these processes and practices in all normative aspects enabled dialog between systemic theories and those which consider the centrality of the social actor in the decision-making process.

  1. Effect of Si implantation on the microstructure of silicon nanocrystals and surrounding SiO2 layer

    International Nuclear Information System (INIS)

    Ross, G.G.; Smirani, R.; Levitcharsky, V.; Wang, Y.Q.; Veilleux, G.; Saint-Jacques, R.G.

    2005-01-01

    Si nanocrystals (Si-nc) embedded in a SiO 2 layer have been characterized by means of transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). For local Si concentration in excess 8 x 10 21 Si + /cm 3 , the size of the Si-nc was found to be ∼3 nm and comparatively homogeneous throughout the whole implanted layer. For local Si concentration in excess of ∼2.4 x 10 22 Si + /cm 3 , the Si-nc diameter ranges from ∼2 to ∼12 nm in the sample, the Si-nc in the middle region of the implanted layer being bigger than those near the surface and the bottom of the layer. Also, Si-nc are visible deeper than the implanted depth. Characterization by XPS shows that a large quantity of oxygen was depleted from the first ∼25 nm in this sample (also visible on TEM image) and most of the SiO 2 bonds have been replaced by Si-O bonds. Experimental and simulation results suggest that a local Si concentration in excess of ∼3 x 10 21 Si/cm 3 is required for the production of Si-nc

  2. Chemically activated graphene/porous Si@SiO{sub x} composite as anode for lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Hua-Chao [College of Materials and Chemical Engineering, China Three Gorges University, 8 Daxue Road, Yichang, Hubei 443002 (China); Collaborative Innovation Center for Microgrid of New Energy, Hubei Province (China); Yang, Xue-Lin, E-mail: xlyang@ctgu.edu.cn [College of Materials and Chemical Engineering, China Three Gorges University, 8 Daxue Road, Yichang, Hubei 443002 (China); Collaborative Innovation Center for Microgrid of New Energy, Hubei Province (China); Zhang, Lu-Lu; Ni, Shi-Bing [College of Materials and Chemical Engineering, China Three Gorges University, 8 Daxue Road, Yichang, Hubei 443002 (China); Collaborative Innovation Center for Microgrid of New Energy, Hubei Province (China)

    2014-10-15

    Chemically activated graphene/porous Si@SiO{sub x} (CAG/Si@SiO{sub x}) composite has been synthesized via magnesiothemic reduction of mesoporous SiO{sub 2} (MCM-48) to porous Si@SiO{sub x} and dispersing in the suspension of chemically activated graphene oxide (CAGO) followed by thermal reduction. The porous Si@SiO{sub x} particles are well encapsulated in chemically activated graphene (CAG) matrix. The resulting CAG/Si@SiO{sub x} composite exhibits a high reversible capacity and excellent cycling stability up to 763 mAh g{sup −1} at a current density of 100 mA g{sup −1} after 50 cycles. The porous structure of CAG layer and Si@SiO{sub x} is beneficial to accommodate volume expansion of Si during discharge and charge process and the interconnected CAG improves the electronic conductivity of composite. - Highlights: • Chemically activated graphene encapsulated porous Si composite was prepared. • The graphene offers a continuous electrically conductive network. • The porous structure can accommodate volume expansion of Si-based materials. • The composite exhibits excellent lithium storage performance.

  3. Dinosaurios saurópodos de la Formación Los Llanos (Cretácico, La Rioja, Argentina): ocurrencia, caracterización sistemática y tafonómica, bioestratigrafía, análisis paleoambientales y sus implicancias geológico-regionales

    OpenAIRE

    Hechenleitner, Esteban Martín

    2017-01-01

    Los saurópodos titanosaurios fueron dinosaurios saurísquios que habitaron todos los continentes, entre el Jurásico Tardío y el Cretácico. Fueron cuadrúpedos amniotas caracterizados típicamente por poseer cuello y cola largos y cabeza proporcionalmente pequeña. Si bien sus restos óseos han sido hallados en todos los continentes, sólo se conocen sitios de nidificación en Asia, Europa, África y Sudamérica. Durante el Cretácico Tardío los Titanosauria experimentaron una gran radiación sudamerican...

  4. Preparation and Oxidation Resistance of Mo-Si-B Coating on Nb-Si Based Alloy Surface

    Directory of Open Access Journals (Sweden)

    PANG Jie

    2018-02-01

    Full Text Available Mo-Si-B coating was prepared on Nb-Si alloys to improve the high-temperature oxidation. The influence of the halide activators (NaF and AlF3 on Si-B co-depositing to obtain Mo-Si-B coating on Nb-Si alloys was analyzed by thermochemical calculations. The results show that NaF proves to be more suitable than AlF3 to co-deposit Si and B. Then Mo-Si-B can be coated on Nb-Si based alloys using detonation gun spraying of Mo followed by Si and B co-deposition. The fabricated coatings consist of outer MoSi2 layer with fine boride phase and inner unreacted Mo layer. The mass gain of the Mo-Si-B coating is 1.52mg/cm2 after oxidation at 1250℃ for 100h. The good oxidation resistance results in a protective borosilicate scale formed on the coating.

  5. The effect of SiC particle size on the properties of Cu–SiC composites

    International Nuclear Information System (INIS)

    Celebi Efe, G.; Zeytin, S.; Bindal, C.

    2012-01-01

    Graphical abstract: The relative densities of Cu–SiC composites sintered at 700 °C for 2 h are ranged from 97.3% to 91.8% for SiC with 1 μm particle size and 97.5% to 95.2% for SiC with 5 μm particle size, microhardness of composites ranged from 143 to 167 HV for SiC having 1 μm particle size and 156–182 HVN for SiC having 5 μm particle size and the electrical conductivity of composites changed between 85.9% IACS and 55.7% IACS for SiC with 1 μm particle size, 87.9% IACS and 65.2%IACS for SiC with 5 μm particle size. It was found that electrical conductivity of composites containing SiC with 5 μm particle size is better than that of Cu–SiC composites containing SiC with particle size of 1 μm. Highlights: ► In this research, the effect of SiC particle size on some properties of Cu–SiC composites were investigated. ► The mechanical properties were improved. ► The electrical properties were obtained at desirable level. -- Abstract: SiC particulate-reinforced copper composites were prepared by powder metallurgy (PM) method and conventional atmospheric sintering. Scanning electron microscope (SEM), X-ray diffraction (XRD) techniques were used to characterize the sintered composites. The effect of SiC content and particle size on the relative density, hardness and electrical conductivity of composites were investigated. The relative densities of Cu–SiC composites sintered at 700 °C for 2 h are ranged from 97.3% to 91.8% for SiC with 1 μm particle size and from 97.5% to 95.2% for SiC with 5 μm particle size. Microhardness of composites ranged from 143 to 167 HV for SiC having 1 μm particle size and from 156 to 182 HV for SiC having 5 μm particle size. The electrical conductivity of composites changed between 85.9% IACS and 55.7% IACS for SiC with 1 μm particle size, between 87.9% IACS and 65.2% IACS for SiC with 5 μm particle size.

  6. Structural and electronic properties of Si/SiO2 MOS structures with aligned 3C-SiC nanocrystals in the oxide

    International Nuclear Information System (INIS)

    Pongracz, A.; Battistig, G.; Duecso, Cs.; Josepovits, K.V.; Deak, P.

    2007-01-01

    Our group previously proved that a simple reactive annealing in CO containing gas produces 3C-SiC nanocrystals, which are epitaxially and void-free aligned in the Si substrate. By a further thermal oxidation step, these nanocrystals can be lifted from the Si and incorporated into the SiO 2 matrix, thereby creating a promising structure for charge storage. In this work the structural and electrical properties of such systems with nanocrystalline SiC will be presented. Prototype MOS structures with 3C-SiC nanocrystals were produced for current-voltage and capacitance-voltage measurements. The results indicate that the high-temperature annealing did not damage the MOS structure, despite the fact that the CO annealing changed the electrical properties of the system. There was a positive charge accumulation and a reversible carrier injection observed in the structure. We assume that the positive charges originated from oxygen vacancies and the charge injection is related to the presence of SiC nanocrystals

  7. Amorphization threshold in Si-implanted strained SiGe alloy layers

    International Nuclear Information System (INIS)

    Simpson, T.W.; Love, D.; Endisch, E.; Goldberg, R.D.; Mitchell, I.V.; Haynes, T.E.; Baribeau, J.M.

    1994-12-01

    The authors have examined the damage produced by Si-ion implantation into strained Si 1-x Ge x epilayers. Damage accumulation in the implanted layers was monitored in situ by time-resolved reflectivity and measured by ion channeling techniques to determine the amorphization threshold in strained Si 1-x Ge x (x = 0.16 and 0.29) over the temperature range 30--110 C. The results are compared with previously reported measurements on unstrained Si 1-x Ge x , and with the simple model used to describe those results. They report here data which lend support to this model and which indicate that pre-existing strain does not enhance damage accumulation in the alloy layer

  8. Elevated Temperature Properties of Commercially Available NITE-SiC/SiC Composites

    International Nuclear Information System (INIS)

    Choi, Y.B.; Hinoki, T.; Kohyama, A.

    2007-01-01

    Full text of publication follows: Continuous fiber-reinforced ceramic matrix composites (CMCs) have been expected as a new type of material having high fracture resistance up to a high temperature. In recent years, there have been extensive efforts in our research group to develop high performance SiC/SiC composites for energy applications, where improvements in mechanical properties and damage resistance by innovative new fabrication process with emphasis on interface improvement have been greatly accomplished. One of the most outstanding accomplishments is the Nano-powder Infiltration and Transient Eutectic (NITE) process using PyC coated Tyranno-SA fibers. For making SiC/SiC composites more attractive and competitive for high temperature structural components and for other industrial applications, one of the key issues is to demonstrate its reliability and safety under severe environments. Also to demonstrate the potential to produce SiC/SiC by NITE process from large scale production line at industries is very important. This paper provides fundamental database of mechanical properties and microstructure of Cera-NITE, the trade name of NITE-SiC/SiC composites. The mechanical properties were evaluated by uni-axial tensile test from room temperature to high temperatures. The tensile properties, including elastic modulus, PLS and ultimate tensile strength, are superior to those of other conventional SiC/SiC composites. The macroscopic observation of Cera-NITE indicated high density as planned with almost no-porosity and cracks. Furthermore, Cera-NITE showed outstanding microstructural uniformity. The characteristic variation coming from the sampling location was hardly observed.. Further information about database of properties and microstructure at evaluated temperature will be provided. (authors)

  9. Regionalização e novos rumos para o SUS: a experiência de um colegiado regional Regionalization and new courses to SUS: the experience of a regional college

    Directory of Open Access Journals (Sweden)

    Emerson Assis

    2009-03-01

    Full Text Available Em que pese todos os avanços no Sistema Único de Saúde (SUS desde a sua implantação, são também notórias as suas fragilidades e seus limites. Um deles, não obstante a diretriz constitucional de regionalização, é que até recentemente não havia uma política concreta de estímulo de integração entre os municípios e, consequentemente, de regiões de saúde, tão necessárias à garantia da integralidade da atenção. Nos últimos três anos, entretanto, o Ministério da Saúde, com a implementação do Pacto pela Saúde, na sua dimensão da gestão, iniciou esse processo, que tem se mostrado promissor para o desenvolvimento e crescimento do SUS nacional. Este trabalho apresenta a experiência positiva de implantação de um Colegiado Regional no Estado de São Paulo, na região de Campinas, através da qual gestores e técnicos das secretarias de saúde estão se tornando sujeitos mais "empoderados" da construção da Saúde na região.Despite all the advances that have occurred in Sistema Único de Saúde (SUS - National Health System since its implementation, its weaknesses and limits are also remarkable. One of them, in spite of the constitutional guideline for regionalization, is that, until recently, there had been no concrete policy to stimulate integration between municipalities and, consequently, between health regions, which are necessary to ensure integral care. In the last three years, however, the Ministry of Health, with the implementation of the Health Pact in its management dimension, started this process, which has been promising to the development and growth of the national SUS. This study presents the positive experience of implementation of a Regional College in the State of São Paulo, in the region of Campinas, through which managers and technicians of the health departments are becoming empowered subjects of the construction of Health in the region.

  10. Mechanics of patterned helical Si springs on Si substrate.

    Science.gov (United States)

    Liu, D L; Ye, D X; Khan, F; Tang, F; Lim, B K; Picu, R C; Wang, G C; Lu, T M

    2003-12-01

    The elastic response, including the spring constant, of individual Si helical-shape submicron springs, was measured using a tip-cantilever assembly attached to a conventional atomic force microscope. The isolated, four-turn Si springs were fabricated using oblique angle deposition with substrate rotation, also known as the glancing angle deposition, on a templated Si substrate. The response of the structures was modeled using finite elements, and it was shown that the conventional formulae for the spring constant required modifications before they could be used for the loading scheme used in the present experiment.

  11. LA INSEGURIDAD LABORAL Y SUS CONSECUENCIAS EN UN CONTEXTO DE CRISIS ECONÓMICA

    Directory of Open Access Journals (Sweden)

    Beatriz Sora

    2014-01-01

    Full Text Available La inseguridad laboral se ha convertido en la actualidad en una de las fuentes de estrés más significativas para muchos trabajadores, siendo especialmente grave en España por las elevadas tasas de desempleo en este periodo de crisis económica. Una prolífera investigación se ha desarrollado al respecto en un intento por alcanzar un conocimiento más completo de este fenómeno. El Instituto de Psicología de los Recursos Humanos, Desarrollo Organizacional y Calidad de Vida Laboral (IDOCAL ha contribuido a esta investigación en los últimos años en varias de sus facetas más significativas. En el ámbito de sus factores determinantes se ha identificado un papel significativo de la antigüedad laboral, la empleabilidad en el mercado laboral, el subempleo, y la autoeficacia laboral. Además se han realizado hallazgos de interés en relación con la diversidad de los tipos de contrato, la inseguridad laboral y sus efectos en los trabajadores. Son de especial interés los estudios que analizan el papel interviniente de distintas variables. En este contexto, nuestros estudios han puesto de manifiesto la relevancia de variables como la justicia organizacional, el clima de justicia organizacional, el apoyo organizacional, la empleabilidad, la dependencia laboral y el distanciamiento psicológico a la hora de predecir la variabilidad en la inseguridad laboral. Por último, las aportaciones del IDOCAL han sido especialmente relevantes al plantear el análisis de la inseguridad laboral como fenómeno colectivo y mostrar cómo la experiencia colectiva de la inseguridad tenía repercusiones sobre el bienestar de los trabajadores más allá de las producidas por sus percepciones individuales. En base a esta investigación se han propuesto en el presente artículo una serie de implicaciones para la práctica profesional.

  12. Helminth parasites of wild boar, Sus scrofa, in Iran.

    Science.gov (United States)

    Eslami, A; Farsad-Hamdi, S

    1992-04-01

    Fifty-seven wild boars (Sus scrofa) from protected regions of Iran were examined for helminths. Sixteen species of helminths were collected; there were ten nematodes, one acanthocephalan, two trematodes and three larval cestodes. New host and distribution records were established for all helminths except of Taenia solium cysticerci. Wild boar shared nine of these helminths with domestic pigs, six with ruminants and three with human beings in Iran. Metastrongylus pudendotectus and M. salmi are reported for the first time from Iran.

  13. Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs

    International Nuclear Information System (INIS)

    Olsen, S.H.; Dobrosz, P.; Escobedo-Cousin, E.; Bull, S.J.; O'Neill, A.G.

    2005-01-01

    Dual channel strained Si/SiGe CMOS architectures currently receive great attention due to maximum performance benefits being predicted for both n- and p-channel MOSFETs. Epitaxial growth of a compressively strained SiGe layer followed by tensile strained Si can create a high mobility buried hole channel and a high mobility surface electron channel on a single relaxed SiGe virtual substrate. However, dual channel n-MOSFETs fabricated using a high thermal budget exhibit compromised mobility enhancements compared with single channel devices, in which both electron and hole channels form in strained Si. This paper investigates the mobility-limiting mechanisms of dual channel structures. The first evidence of increased interface roughness due to the introduction of compressively strained SiGe below the tensile strained Si channel is presented. Interface corrugations degrade electron mobility in the strained Si. Roughness measurements have been carried out using AFM and TEM. Filtering AFM images allowed roughness at wavelengths pertinent to carrier transport to be studied and the results are in agreement with electrical data. Furthermore, the first comparison of strain measurements in the surface channels of single and dual channel architectures is presented. Raman spectroscopy has been used to study channel strain both before and after processing and indicates that there is no impact of the buried SiGe layer on surface macrostrain. The results provide further evidence that the improved performance of the single channel devices fabricated using a high thermal budget arises from improved surface roughness and reduced Ge diffusion into the Si channel

  14. Implantation of P ions in SiO{sub 2} layers with embedded Si nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Kachurin, G.A. E-mail: kachurin@isp.nsc.ru; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I

    2004-08-01

    The effect of 10{sup 13}-10{sup 16} cm{sup -2} P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO{sub 2} layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10{sup 14} cm{sup -2}, thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs.

  15. EL MAESTRO ORLANDO FALS BORDA SUS IDEAS EDUCATIVAS Y SOCIALES PARA EL CAMBIO EN LA SOCIEDAD COLOMBIANA

    Directory of Open Access Journals (Sweden)

    Javier Ocampo López

    2009-01-01

    Full Text Available Este trabajo de investigación de HISULA en la serie de Educadores Latinoamericanos tiene por objeto el estudio de las ideas educativas y la metodología científica de la Investigación-Acción Participativa del educador Dr. Orlando Fals Borda, uno de los grandes ideólogos de la educación universitaria en Colombia. Se preocupa por el análisis de sus principales obras relacionadas con el estudio sociológico de los campesinos de los Andes y el Hombre y la Tierra en la región cundiboyacense del Altiplano Andino. Este ilustre educador barranquillero hizo sus trabajos de investigación sociológica del pueblo colombiano y defendió el papel de la educación en el cambio social. Con su metodología de la investigación-acción participativa señaló los nuevos rumbos de la educación colombiana centrada en el alumno y en la filosofía del "aprender haciendo". En sus actividades docentes formó una generación de sociólogos dedicados a la investigación social en una época de crisis y de cambios. Por ello su acción se realizó en la Facultad de Sociología de la Universidad Nacional y en sus investigaciones científicas y educativas, destacando su metodología de "La investigación-Acción Participativa". Su actuación fue definitiva como ideólogo de la Constitución Nacional de 1991, en la cual se plasmaron algunas de sus ideas.

  16. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, Andrey; Tichelaar, F.D.; Verhoeven, J.; Louis, Eric; Bijkerk, Frederik

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10–20 nm were produced by sequential deposition of Si and implantation of 1 keV View the MathML source ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5–1 nm, buried SiC layer being

  17. Effects of MeV Si ions bombardment on the thermoelectric generator from SiO{sub 2}/SiO{sub 2} + Cu and SiO{sub 2}/SiO{sub 2} + Au nanolayered multilayer films

    Energy Technology Data Exchange (ETDEWEB)

    Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Chacha, J., E-mail: chacha_john79@hotmail.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Smith, C., E-mail: cydale@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States); Pugh, M., E-mail: marcuspughp@yahoo.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Colon, T. [Department of Mechanical Engineering, Alabama A and M University, Normal, AL (United States); Heidary, K., E-mail: kaveh.heidary@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Johnson, R.B., E-mail: barry@w4wb.com [Department of Physics, Alabama A and M University, Normal, AL (United States); Ila, D., E-mail: ila@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States)

    2011-12-15

    The defects and disorder in the thin films caused by MeV ions bombardment and the grain boundaries of these nanoscale clusters increase phonon scattering and increase the chance of an inelastic interaction and phonon annihilation. We prepared the thermoelectric generator devices from 100 alternating layers of SiO{sub 2}/SiO{sub 2} + Cu multi-nano layered superlattice films at the total thickness of 382 nm and 50 alternating layers of SiO{sub 2}/SiO{sub 2} + Au multi-nano layered superlattice films at the total thickness of 147 nm using the physical vapor deposition (PVD). Rutherford Backscattering Spectrometry (RBS) and RUMP simulation have been used to determine the stoichiometry of the elements of SiO{sub 2}, Cu and Au in the multilayer films and the thickness of the grown multi-layer films. The 5 MeV Si ions bombardments have been performed using the AAMU-Center for Irradiation of Materials (CIM) Pelletron ion beam accelerator to make quantum (nano) dots and/or quantum (quantum) clusters in the multilayered superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. To characterize the thermoelectric generator devices before and after Si ion bombardments we have measured Seebeck coefficient, cross-plane electrical conductivity, and thermal conductivity in the cross-plane geometry for different fluences.

  18. Antioxidant migration resistance of SiOx layer in SiOx/PLA coated film.

    Science.gov (United States)

    Huang, Chongxing; Zhao, Yuan; Su, Hongxia; Bei, Ronghua

    2018-02-01

    As novel materials for food contact packaging, inorganic silicon oxide (SiO x ) films are high barrier property materials that have been developed rapidly and have attracted the attention of many manufacturers. For the safe use of SiO x films for food packaging it is vital to study the interaction between SiO x layers and food contaminants, as well as the function of a SiO x barrier layer in antioxidant migration resistance. In this study, we deposited a SiO x layer on polylactic acid (PLA)-based films to prepare SiO x /PLA coated films by plasma-enhanced chemical vapour deposition. Additionally, we compared PLA-based films and SiO x /PLA coated films in terms of the migration of different antioxidants (e.g. t-butylhydroquinone [TBHQ], butylated hydroxyanisole [BHA], and butylated hydroxytoluene [BHT]) via specific migration experiments and then investigated the effects of a SiO x layer on antioxidant migration under different conditions. The results indicate that antioxidant migration from SiO x /PLA coated films is similar to that for PLA-based films: with increase of temperature, decrease of food simulant polarity, and increase of single-sided contact time, the antioxidant migration rate and amount in SiO x /PLA coated films increase. The SiO x barrier layer significantly reduced the amount of migration of antioxidants with small and similar molecular weights and similar physical and chemical properties, while the degree of migration blocking was not significantly different among the studied antioxidants. However, the migration was affected by temperature and food simulant. Depending on the food simulants considered, the migration amount in SiO x /PLA coated films was reduced compared with that in PLA-based films by 42-46%, 44-47%, and 44-46% for TBHQ, BHA, and BHT, respectively.

  19. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    International Nuclear Information System (INIS)

    Onojima, Norio; Kasamatsu, Akihumi; Hirose, Nobumitsu; Mimura, Takashi; Matsui, Toshiaki

    2008-01-01

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g m ) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f T compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel

  20. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    Energy Technology Data Exchange (ETDEWEB)

    Onojima, Norio [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)], E-mail: nonojima@nict.go.jp; Kasamatsu, Akihumi; Hirose, Nobumitsu [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Mimura, Takashi [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Matsui, Toshiaki [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)

    2008-07-30

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g{sub m}) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f{sub T} compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel.

  1. Tenacidad a la fractura de compuestos cermets 3Al2O3*2SiO2/Ag manufacturados por molienda de alta energía

    OpenAIRE

    Hernández,José G. Miranda; Bustamante,Miriam Vázquez; Hernández,Héctor Herrera; Morán,Carlos O. González; Rangel,Enrique Rocha; García,Elizabeth Refugio

    2016-01-01

    La fabricación de materiales compuestos de matriz cerámica reforzados con partículas metálicas han propiciado la formación de nuevos materiales conocidos como compuestos CERMETS, materiales que debido a sus elementos precursores poseen propiedades distintas a las de los materiales convencionales. En este trabajo se establece la ruta de fabricación de materiales compuestos cermets base 3Al2O3*2SiO2 reforzados con partículas metálicas de Ag a partir de la formación de la composición química en ...

  2. Energetic prediction on the stability of A2Mg12Si7, A2Mg4Si3, and AMgSi in the A2Si–Mg2Si system (A = Ca, Sr and Ba) and their calculated electronic structures

    International Nuclear Information System (INIS)

    Imai, Yoji; Mori, Yoshihisa; Nakamura, Shigeyuki; Takarabe, Ken-ichi

    2014-01-01

    Highlights: • Formation energies of A 2 Mg 4 Si 3 , A 2 Mg 12 Si 7 , and AMgSi (A = Ca,Sr,Ba) were calculated. • All AMgSi are quite stable compared to mixture of A 2 Si and Mg 2 Si. • Ba 2 Mg 4 Si 3 and Sr 2 Mg 4 Si 3 are predicted to be stable, but Ca 2 Mg 4 Si 3 is not. • Ca 2 Mg 12 Si 7 and Sr 2 Mg 12 Si 7 are energetically unstable. • Stability of Ba 2 Mg 12 Si 7 is a tender subject. -- Abstract: In order to evaluate the relative stability of A 2 Mg 4 Si 3 , A 2 Mg 12 Si 7 , and AMgSi (A = Ca, Sr, and Ba) in the A 2 Si–Mg 2 Si system, electronic energy changes in the formation of these compounds were calculated using a density-functional theory with the Perdew–Wang generalized gradient approximations. It was found that (1) AMgSi’s are quite stable compared to equi-molar mixture of A 2 Si and Mg 2 Si, (2) Ba 2 Mg 4 Si 3 and Sr 2 Mg 4 Si 3 are also stable, (3) Ca 2 Mg 4 Si 3 and Ca 2 Mg 12 Si 7 are less stable than the mixture of CaMgSi and Mg 2 Si, and (4) Stability of Ba 2 Mg 12 Si 7 is a tender subject and Sr 2 Mg 12 Si 7 is energetically unstable compared to the mixture of Sr 2 Mg 4 Si 3 (or, SrMgSi) and Mg 2 Si. The presence of Sr 2 Mg 12 Si 7 may be due to the vibrational and/or configurational entropy, which are not treated in the present study. From the calculated electronic densities of state, complex compounds of SrMgSi and Mg 2 Si have both p-type and n-type character, depending on the ratio of SrMgSi and Mg 2 Si in that compound

  3. Palladium transport in SiC

    International Nuclear Information System (INIS)

    Olivier, E.J.; Neethling, J.H.

    2012-01-01

    Highlights: ► We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. ► The high temperature mobility of palladium silicides within polycrystalline SiC was studied. ► Corrosion of SiC by Pd was seen in all cases. ► The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. ► The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd 2 Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  4. Marker experiments in growth studies of Ni2Si, Pd2Si, and CrSi2 formed both by thermal annealing and by ion mixing

    International Nuclear Information System (INIS)

    Hung, L.S.; Mayer, J.W.; Pai, C.S.; Lau, S.S.

    1985-01-01

    Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni 2 Si, while Si is the diffusing species in CrSi 2 . In Pd 2 Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems

  5. Marbled texture of sputtered Al/Si alloy thin film on Si

    Energy Technology Data Exchange (ETDEWEB)

    Gentile, M.G. [Physics Department and NIS Interdepartmental Center, University of Torino, via P. Giuria 1, 10125 Torino (Italy); Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Muñoz-Tabares, J.A.; Chiodoni, A. [Istituto Italiano di Tecnologia, Center for Space Human Robotics, Corso Trento 21, 10129 Torino (Italy); Sgorlon, C. [Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Para, I. [Department of Applied Science and Technology (DISAT), Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino (Italy); Carta, R.; Richieri, G. [Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Bejtka, K. [Istituto Italiano di Tecnologia, Center for Space Human Robotics, Corso Trento 21, 10129 Torino (Italy); Merlin, L. [Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Vittone, E. [Physics Department and NIS Interdepartmental Center, University of Torino, via P. Giuria 1, 10125 Torino (Italy)

    2016-08-01

    DC magnetron sputtering is a commonly used technique for the fabrication of silicon based electronic devices, since it provides high deposition rates and uniform large area metallization. However, in addition to the thickness uniformity, coating optical uniformity is a crucial need for semiconductor industrial processes, due to the wide use of optical recognition tools. In the silicon-based technology, aluminum is one of the most used materials for the metal contact. Both the pre-deposition substrate cleaning and the sputtering conditions determine the quality and the crystalline properties of the final Al deposited film. In this paper is shown that not all the mentioned conditions lead to good quality and uniform Al films. In particular, it is shown that under certain standard process conditions, Al/Si alloy (1% Si) metallization on a [100] Si presents a non-uniform reflectivity, with a marbled texture caused by flakes with milky appearance. This optical inhomogeneity is found to be caused by the coexistence of randomly orient Al/Si crystal, with heteroepitaxial Al/Si crystals, both grown on Si substrate. Based on the microstructural analysis, some strategies to mitigate or suppress this marbled texture of the Al thin film are proposed and discussed. - Highlights: • Sputtered Al/Si layers deposited on Si present evident optical non-uniformity • It could be an issue for optical recognition tools used in semiconductor industries • Optical non-uniformity is due to randomly oriented growth of Al grains. • Substrate misorientation and process temperature can mitigate the problem.

  6. Analysis of Si/SiGe Heterostructure Solar Cell

    Directory of Open Access Journals (Sweden)

    Ashish Kumar Singh

    2014-01-01

    Full Text Available Sunlight is the largest source of carbon-neutral energy. Large amount of energy, about 4.3 × 1020 J/hr (Lewis, 2005, is radiated because of nuclear fusion reaction by sun, but it is unfortunate that it is not exploited to its maximum level. Various photovoltaic researches are ongoing to find low cost, and highly efficient solar cell to fulfil looming energy crisis around the globe. Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1-xGex heterostructure solar cell. The research has investigated characteristics such as short circuit current density (Jsc, generation rate (G, absorption coefficient (α, and open circuit voltage (Voc with optimal Ge concentration. The addition of Ge content to Si layer will affect the property of material and can be calculated with the use of Vegard’s law. Due to this, short circuit current density increases.

  7. C-H and C-C activation of n -butane with zirconium hydrides supported on SBA15 containing N-donor ligands: [(≡SiNH-)(≡SiX-)ZrH2], [(≡SiNH-)(≡SiX-)2ZrH], and[(≡SiN=)(≡SiX-)ZrH] (X = -NH-, -O-). A DFT study

    KAUST Repository

    Pasha, Farhan Ahmad

    2014-07-01

    Density functional theory (DFT) was used to elucidate the mechanism of n-butane hydrogenolysis (into propane, ethane, and methane) on well-defined zirconium hydrides supported on SBA15 coordinated to the surface via N-donor surface pincer ligands: [(≡SiNH-)(≡SiO-)ZrH2] (A), [(≡SiNH-)2ZrH2] (B), [(≡SiNH-)(≡SiO-) 2ZrH] (C), [(≡SiNH-)2(≡SiO-)ZrH] (D), [(≡SiN=)(≡Si-O-)ZrH] (E), and [(≡SiN=)(≡SiNH-)ZrH] (F). The roles of these hydrides have been investigated in C-H/C-C bond activation and cleavage. The dihydride A linked via a chelating [N,O] surface ligand was found to be more active than B, linked to the chelating [N,N] surface ligand. Moreover, the dihydride zirconium complexes are also more active than their corresponding monohydrides C-F. The C-C cleavage step occurs preferentially via β-alkyl transfer, which is the rate-limiting step in the alkane hydrogenolysis. The energetics of the comparative pathways over the potential energy surface diagram (PES) reveals the hydrogenolysis of n-butane into propane and ethane. © 2014 American Chemical Society.

  8. Sr-Al-Si co-segregated regions in eutectic Si phase of Sr-modified Al-10Si alloy.

    Science.gov (United States)

    Timpel, M; Wanderka, N; Schlesiger, R; Yamamoto, T; Isheim, D; Schmitz, G; Matsumura, S; Banhart, J

    2013-09-01

    The addition of 200 ppm strontium to an Al-10 wt% Si casting alloy changes the morphology of the eutectic silicon phase from coarse plate-like to fine fibrous networks. In order to clarify this modification mechanism the location of Sr within the eutectic Si phase has been investigated by a combination of high-resolution methods. Whereas three-dimensional atom probe tomography allows us to visualise the distribution of Sr on the atomic scale and to analyse its local enrichment, transmission electron microscopy yields information about the crystallographic nature of segregated regions. Segregations with two kinds of morphologies were found at the intersections of Si twin lamellae: Sr-Al-Si co-segregations of rod-like morphology and Al-rich regions of spherical morphology. Both are responsible for the formation of a high density of multiple twins and promote the anisotropic growth of the eutectic Si phase in specific crystallographic directions during solidification. The experimental findings are related to the previously postulated mechanism of "impurity induced twinning". Copyright © 2012 Elsevier B.V. All rights reserved.

  9. Desprendimiento seroso macular asociado a foseta papilar congénita y coloboma de papila: ¿Qué opciones terapéuticas tenemos?

    Directory of Open Access Journals (Sweden)

    Caridad Chiang Rodríguez

    Full Text Available La foseta papilar es una rara anomalía congénita que forma parte del espectro de las anormalidades congénitas del disco óptico. Se trata de invaginaciones intrapapilares que suelen localizarse en el margen del disco óptico. La mayoría se localiza a nivel temporal; en torno al 20 % son de localización central seguidas por las fosetas superiores, inferiores o nasales. La bilateralidad se estima en un 10-15 % y su incidencia se ha establecido en torno al 0,19 %. Suelen ser asintomáticas, aunque en aproximadamente el 50 % de los casos se produce afectación macular por el paso de fluido procedente desde la foseta papilar hacia las diferentes capas retinianas, lo que afecta secundariamente la agudeza visual y es, por tanto, el motivo de consulta. Hasta el momento se han descrito múltiples alternativas terapéuticas para el tratamiento de los desprendimientos de retina serosos asociados a foseta de papila, pero ninguna de estas alternativas se ha impuesto sobre el resto. El tratamiento de esta enfermedad consiste en cerrar la comunicación entre la foseta y el espacio subretiniano con diversas opciones terapéuticas como: la fotocoagulación láser, la neumoretinopexia, la indentación escleral posterior, la fenestración del nervio óptico, la vitrectomía o alguna combinación de las anteriores. La actual revisión bibliográfica se propone profundizar en el tema, sobre la base de pacientes en consulta con dicha afección retiniana.

  10. El desarrollo psicomotor y sus alteraciones: entre lo normal y lo patológico

    Directory of Open Access Journals (Sweden)

    Agustina Vericat

    2013-10-01

    Full Text Available El siguiente artículo discute aspectos propios del desarrollo psicomotor (DPM y sus alteraciones, con especial énfasis en el retraso psicomotor. Se hace referencia a las clasificaciones diagnósticas para los problemas del desarrollo como el DSMIV y el CIE 10, y se analizan sus ventajas y desventajas. También se problematiza el concepto de normalidad en tanto sinónimo de promedio estadístico en el contexto de los problemas del DPM, para considerar su dinámica y variabilidad, evitando la oposición normalidad/patología, y valorando aspectos como el sociocultural que permiten repensar la universalidad y la relatividad del DPM.

  11. Formation of ultra-fine grained SUS316L steels by ball-milling and their mechanical properties after neutron irradiation

    International Nuclear Information System (INIS)

    Zheng, Y.J.; Yamasaki, T.; Fukami, T.; Terasawa, M.; Mitamura, T.

    2003-01-01

    In order to overcome the irradiation embrittlement in austenitic stainless steels, ultra-fine grained SUS316L steels with very fine TiC particles have been developed. The SUS316L-TiC nanocomposite powders having 1.0 to 2.0 mass% TiC were prepared by ball-milling SUS316L-TiC powder mixtures for 125 h in an argon gas atmosphere. The milled powders were consolidated by hot isostatic pressing (HIP) under a pressure of 200 MPa at temperatures between 700 and 1000 C, and the bulk materials with grain sizes between 100 and 400 nm have been produced. The possibility of using fine-grained TiC particles to pin grain boundaries and thereby maintain the ultra-fine grained structures has been discussed. In order to clarify the effects of the neutron irradiation on mechanical properties of the ultra-fine grained SUS316L steels, Vickers microhardness measurements were performed before and after the irradiation of 1.14 x 10 23 n/m 2 and 1.14 x 10 24 n/m 2 . The hardness increased with increasing the dose of the irradiation. However, these increasing rates of the ultra-fine grained steels were much smaller than those of the coarse-grained SUS316L steels having grain sizes between 13 and 50 μm. (orig.)

  12. SHS synthesis of Si-SiC composite powders using Mg and reactants from industrial waste

    Science.gov (United States)

    Chanadee, Tawat

    2017-11-01

    Si-SiC composite powders were synthesized by self-propagating high-temperature synthesis (SHS) using reactants of fly ash-based silica, sawdust-based activated carbon, and magnesium. Fly ash-based silica and sawdust-based activated carbon were prepared from coal mining fly ash and Para rubber-wood sawdust, respectively. The work investigated the effects of the synthesis atmosphere (air and Ar) on the phase and morphology of the SHS products. The SHS product was leached by a two-step acid leaching processes, to obtain the Si-SiC composite powder. The SHS product and SHS product after leaching were characterized by X-ray diffractometry, scanning electron microscopy and energy dispersive X-ray spectrometry. The results indicated that the SHS product synthesized in air consisted of Si, SiC, MgO, and intermediate phases (SiO2, Mg, Mg2SiO4, Mg2Si), whereas the SHS product synthesized in Ar consisted of Si, SiC, MgO and a little Mg2SiO4. The SiC content in the leached-SHS product was higher when Ar was used as the synthesis atmosphere. As well as affecting the purity, the synthesis atmospheres also affected the average crystalline sizes of the products. The crystalline size of the product synthesized in Ar was smaller than that of the product synthesized in air. All of the results showed that fly ash and sawdust could be effective waste-material reactants for the synthesis of Si-SiC composite powders.

  13. First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model

    Science.gov (United States)

    Nagura, Takuya; Kawachi, Shingo; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Kageshima, Hiroyuki; Endoh, Tetsuo; Shiraishi, Kenji

    2018-04-01

    It is expected that the off-state leakage current of MOSFETs can be reduced by employing vertical body channel MOSFETs (V-MOSFETs). However, in fabricating these devices, the structure of the Si pillars sometimes cannot be maintained during oxidation, since Si atoms sometimes disappear from the Si/oxide interface (Si missing). Thus, in this study, we used first-principles calculations based on the density functional theory, and investigated the Si emission behavior at the various interfaces on the basis of the Si emission model including its atomistic structure and dependence on Si crystal orientation. The results show that the order in which Si atoms are more likely to be emitted during thermal oxidation is (111) > (110) > (310) > (100). Moreover, the emission of Si atoms is enhanced as the compressive strain increases. Therefore, the emission of Si atoms occurs more easily in V-MOSFETs than in planar MOSFETs. To reduce Si missing in V-MOSFETs, oxidation processes that induce less strain, such as wet or pyrogenic oxidation, are necessary.

  14. Solid-state 27Al and 29Si NMR investigations on Si-substituted hydrogarnets

    International Nuclear Information System (INIS)

    Rivas Mercury, J.M.; Pena, P.; Aza, A.H. de; Turrillas, X.; Sobrados, I.; Sanz, J.

    2007-01-01

    Partially deuterated Ca 3 Al 2 (SiO 4 ) 3-x (OH) 4x hydrates prepared by a reaction in the presence of D 2 O of synthetic tricalcium aluminate with different amounts of amorphous silica were characterized by 29 Si and 27 Al magic-angle spinning nuclear magnetic resonance (NMR) spectroscopy. The 29 Si NMR spectroscopy was used for quantifying the non-reacted silica and the resulting hydrated products. The incorporation of Si into Ca 3 Al 2 (SiO 4 ) 3-x (OH) 4x was followed by 27 Al NMR spectroscopy: Si:OH ratios were determined quantitatively from octahedral Al signals ascribed to Al(OH) 6 and Al(OSi)(OH) 5 environments. The NMR data obtained were consistent with the concentrations of the Al and Si species deduced from transmission electron microscopy energy-dispersive spectrometry and Rietveld analysis of both X-ray and neutron diffraction data

  15. Mechanical properties of MeV ion-irradiated SiC/SiC composites characterized by indentation technique

    International Nuclear Information System (INIS)

    Park, J.Y.; Park, K.H.; Kim, W.; Kishimoto, H.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites have been considered as a structural material for advanced fusion concepts. In the core of fusion reactor, those SiC/SiC composites are experienced the complex attacks such as strong neutron, high temperature and transmuted gases. One of the vital data for designing the SiC/SiC composites to the fusion reactor is mechanical properties under the severe neutron irradiation. In this work, various SiC/SiC composites were prepared by the different fabrication processes like CVI (chemical vapor infiltration), WA-CVI (SiC whisker assisted CVI) and hot-pressed method. The expected neutron irradiation was simulated by a silicon self-ion irradiation at a DuET facility; Dual-beam for Energy Technologies, Kyoto University. The irradiation temperature were 600 deg. C and 1200 deg. C, and the irradiation does were 5 dpa and 20 dpa, respectively. The 5.1 MeV Si ions were irradiated to the intrinsic CVI-SiC, SiC whisker reinforced SiC and SiC composites produced by hot-press method. The mechanical properties like hardness, elastic modulus and fracture toughness were characterized by an indentation technique. The ion irradiation caused the increase of the hardness and fracture toughness, which was dependent on the irradiation temperature. SiC whisker reinforcement in the SiC matrix accelerated the increase of the fracture toughness by the ion irradiation. For SiC/SiC composites after the ion irradiation, this work will provide the additional data for the mechanical properties as well as the effect of SiC whisker reinforcement. (authors)

  16. Silicon electrodeposition from chloride-fluoride melts containing K2SiF6 and SiO2

    Directory of Open Access Journals (Sweden)

    Zhuk Sergey I.

    2017-01-01

    Full Text Available Silicon electrodeposition on glassy carbon from the KF-KCl-K2SiF6, KF-KCl-K2SiF6-KOH and KF-KCl-K2SiF6-SiO2 melts was studied by the cyclic voltammetry. Тhe electroreduction of Si(IV to metallic Si was observed as a single 4-electron wave under all considered conditions. The reactions of cathode reduction of silicon from fluoride and oxyfluoride complexes were suggested. It was shown that the process can be controlled by the preliminary transformation of SiO44- to SiF62- and SiOxFyz-. The influence of the current density on structure and morphology of silicon deposits obtained during galvanostatic electrolysis of the KF-KCl-K2SiF6-SiO2 melt was studied.

  17. Formation of permeation barriers on ceramic SiC/SiC composites

    International Nuclear Information System (INIS)

    Racault, C.; Fenici, P.

    1996-01-01

    The effectiveness as permeation barriers of the following CVD and PVD (sputtering) coatings has been investigated: TiC+Al 2 O 3 (CVD), SiC(CVD), SiO 2 (CVD), TiN(CVD), TiN(CVD)+TiN(PVD) and SiC(CVD)+Al 2 O 3 (PVD). The substrate material was a SiC/SiC composite, proposed as low activation structural material for fusion applications. Permeation measurements were performed in the temperature range 300-750 K using deuterium at pressures in the range 0.5-150 kPa. A linear dependence of permeation rate on pressure was measured. The efficiency of the coatings as deuterium permeation barriers is discussed in terms of coating microstructure. The best result was obtained with a bilayer of TiN(CVD) (15 μm) +TiN(PVD) (8 μm). (orig.)

  18. Physical studies of strained Si/SiGe heterostructures. From virtual substrates to nanodevices

    Energy Technology Data Exchange (ETDEWEB)

    Minamisawa, Renato Amaral

    2011-10-21

    During the past two decades, the decrease in intrinsic delay of MOSFETs has been driven by the scaling of the device dimensions. The performance improvement has relied mostly in the increase of source velocity with gate scaling, while the transport properties of the channel have remained constant, i.e., those of conventional Si. Starting at the 90 nm node, uniaxial strain has been introduced in the transistor channel in order to further increase the source velocity. Beyond the 32 nm node, novel channel materials, with superior carrier velocities, and novel device architectures are required in order to continue the performance enhancement of MOSFETs while preserving the electrostatic control. In this Thesis, different physical aspects of strained Si and SiGe materials are investigated as a mean to increase carrier velocity in MOSFET channels. Novel approaches for the fabrication of strained Si based on ion implantation and anneal induced relaxation of virtual substrates are developed. The strain relaxation of SiGe layers is improved using a buried thin Si:C layer in the Si(100) substrate. Further, a Si{sup +} ion implantation and annealing method is investigated for relaxing virtual substrates using lower implantation dose. Finally, the uniaxial relaxation of {l_brace}110{r_brace} surface oriented substrates is demonstrated using a He ion implantation and anneal technique. Apart of channel material studies, the fundamental and technological challenges involved in the integration of strained Si and SiGe into MOSFETs are assessed. The impact of source and drain formation on the elastic strain and electrical properties of strained Si layers and nanowires is examined. Also, the formation of ultra-shallow junction in strained Si/strained Si{sub 0.5}Ge{sub 0.5}/SSOI heterostructures is investigated using different types of ion implanted specie and annealing. The results show that BF{sup +}{sub 2} implantation and low temperature annealing are suitable approaches for

  19. A TEM study of strained SiGe/Si and related heteroepitaxial structures

    International Nuclear Information System (INIS)

    Benedetti, Alessandro

    2002-01-01

    The role of SiGe/Si heterostructures and related materials has become increasingly important within the last few decades. In order to increase the scale of integration, however, devices with active elements not larger than few tens of nanometer have been recently introduced. There is, therefore, a strong need for an analytical technique capable of giving information about submicron-sized components. An investigation on a nanometre scale can be performed by the combination of a fully equipped Transmission Electron Microscope (TEM) with a Field Emission Gun (PEG) electron source, which enables one to use a wide range of analytical techniques with an electron probe as small as 0.5 nm. In this work, two different types of SiGe/Si-based devices were investigated. Strained-Si n-channel MOSFETs. The use of Strained-Si n-channel grown on SiGe should improve both carrier mobility and transconductance with respect to conventional MOSFETs. Materials analysed in this work showed an extremely high transconductance but a rather low mobility. In order to relate their microstructural properties to their electrical performance, as well as to improve the device design, a full quantitative and qualitative structural characterisation was performed. SiGe Multiple Quantum Wells (MQW) IR detectors Light detection is achieved by collecting the photogenerated carriers, injected from the SiGe QWs layers into the Si substrate. A key factor is the Ge profile across a single QW, since it governs the band structure and therefore the device performances. Four different TEM techniques were used to determine the Ge distribution across a single well, showing an overall good agreement among the results. The Ge profiles broadening, consistent with data available in literature, was successfully explained and theoretically predicted by the combined effect of Ge segregation and gas dwell times within the reactor. (author)

  20. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    Science.gov (United States)

    Budak, S.; Heidary, K.; Johnson, R. B.; Colon, T.; Muntele, C.; Ila, D.

    2014-08-01

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S2σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  1. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    Energy Technology Data Exchange (ETDEWEB)

    Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Heidary, K. [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Johnson, R.B.; Colon, T. [Department of Physics, Alabama A and M University, Huntsville, AL (United States); Muntele, C. [Cygnus Scientific Services, Huntsville, AL (United States); Ila, D. [Department of Physics, Fayetteville St. University, Fayetteville, NC (United States)

    2014-08-15

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S{sup 2}σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  2. Microstructure and mechanical properties of annealed SUS 304H austenitic stainless steel with copper

    Energy Technology Data Exchange (ETDEWEB)

    Sen, Indrani [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India); Amankwah, E. [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India); Department of Materials Science, African University of Science and Technology, Abuja (Nigeria); Kumar, N.S. [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India); Fleury, E. [Center for High Temperature Energy Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Oh-ishi, K.; Hono, K. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Ramamurty, U., E-mail: ramu@materials.iisc.ernet.in [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India)

    2011-05-25

    Research highlights: {yields} SUS 304H austenitic stainless steel containing 3 wt.% Cu was annealed at 700 deg. C for up to 100 h. {yields} Microstructure and mechanical properties of annealed alloys are examined. {yields} Nano-sized Cu-rich precipitation upon annealing. {yields} Strength of the alloy remains invariant with annealing whereas ductility improves. {yields} Fatigue crack growth threshold of 3 wt.% Cu added alloy increases with annealing. - Abstract: An experimental investigation into the effect of Cu on the mechanical properties of 0 and 3 wt.% Cu added SUS 304H austenitic stainless steel upon annealing at 700 deg. C for up to 100 h was conducted. Optical microscopy reveals grain coarsening in both the alloys upon annealing. Observations by transmission electron microscopy revealed the precipitation of nanometer-sized spherical Cu particles distributed within the austenitic grains and the presence of carbides at the dislocations. Both the yield and ultimate tensile strengths of the alloys were found to remain invariant with annealing. Tensile ductility and the threshold stress intensity factor range for fatigue crack growth for 3 wt.% Cu added alloy increase with annealing. These are attributed to the grain coarsening with annealing. In all, the addition of Cu to SUS 304H does not affect the mechanical performance adversely while improving creep resistance.

  3. Mass Spectrometric Investigation of Silicon Extremely Enriched in (28)Si: From (28)SiF4 (Gas Phase IRMS) to (28)Si Crystals (MC-ICP-MS).

    Science.gov (United States)

    Pramann, Axel; Rienitz, Olaf

    2016-06-07

    A new generation of silicon crystals even further enriched in (28)Si (x((28)Si) > 0.999 98 mol/mol), recently produced by companies and institutes in Russia within the framework of a project initiated by PTB, were investigated with respect to their isotopic composition and molar mass M(Si). A modified isotope dilution mass spectrometric (IDMS) method treating the silicon as the matrix containing a so-called virtual element (VE) existing of the isotopes (29)Si and (30)Si solely and high resolution multicollector inductively coupled plasma mass spectrometry (MC-ICP-MS) were applied in combination. This method succeeds also when examining the new materials holding merely trace amounts of (29)Si (x((29)Si) ≈ 5 × 10(-6) mol/mol) and (30)Si (x((30)Si) ≈ 7 × 10(-7) mol/mol) extremely difficult to detect with lowest uncertainty. However, there is a need for validating the enrichment in (28)Si already in the precursor material of the final crystals, silicon tetrafluoride (SiF4) gas prior to crystal production. For that purpose, the isotopic composition of selected SiF4 samples was determined using a multicollector magnetic sector field gas-phase isotope ratio mass spectrometer. Contaminations of SiF4 by natural silicon due to storing and during the isotope ratio mass spectrometry (IRMS) measurements were observed and quantified. The respective MC-ICP-MS measurements of the corresponding crystal samples show-in contrast-several advantages compared to gas phase IRMS. M(Si) of the new crystals were determined to some extent with uncertainties urel(M) < 1 × 10(-9). This study presents a clear dependence of the uncertainty urel(M(Si)) on the degree of enrichment in (28)Si. This leads to a reduction of urel(M(Si)) during the past decade by almost 3 orders of magnitude and thus further reduces the uncertainty of the Avogadro constant NA which is one of the preconditions for the redefinition of the SI unit kilogram.

  4. Positron annihilation in SiO 2-Si studied by a pulsed slow positron beam

    Science.gov (United States)

    Suzuki, R.; Ohdaira, T.; Uedono, A.; Kobayashi, Y.

    2002-06-01

    Positron and positronium (Ps) behavior in SiO 2-Si have been studied by means of positron annihilation lifetime spectroscopy (PALS) and age-momentum correlation (AMOC) spectroscopy with a pulsed slow positron beam. The PALS study of SiO 2-Si samples, which were prepared by a dry-oxygen thermal process, revealed that the positrons implanted in the Si substrate and diffused back to the interface do not contribute to the ortho-Ps long-lived component, and the lifetime spectrum of the interface has at least two components. From the AMOC study, the momentum distribution of the ortho-Ps pick-off annihilation in SiO 2, which shows broader momentum distribution than that of crystalline Si, was found to be almost the same as that of free positron annihilation in SiO 2. A varied interface model was proposed to interpret the results of the metal-oxide-semiconductor (MOS) experiments. The narrow momentum distribution found in the n-type MOS with a negative gate bias voltage could be attributed to Ps formation and rapid spin exchange in the SiO 2-Si interface. We have developed a two-dimensional positron lifetime technique, which measures annihilation time and pulse height of the scintillation gamma-ray detector for each event. Using this technique, the positronium behavior in a porous SiO 2 film, grown by a sputtering method, has been studied.

  5. SiC/SiC composite fabricated with carbon nanotube interface layer and a novel precursor LPVCS

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Shuang, E-mail: zhsh6007@126.com [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073 (China); School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Zhou, Xingui; Yu, Jinshan [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073 (China); Mummery, Paul [School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2014-02-15

    Highlights: • The CNTs were distributed uniformly on the SiC fibers in the fabric by CVD process. • The microstructural evolution of the CNTs interface coating was studied. • The closed porosity was investigated by X-ray tomography. • The liquid precursor LPVCS exhibited high densification efficiency. - Abstract: Continuous SiC fiber reinforced SiC matrix composites (SiC/SiC) have been studied as promising candidate materials for nuclear applications. Three-dimensional SiC/SiC composite was fabricated via polymer impregnation and pyrolysis (PIP) process using carbon nanotubes (CNTs) as the interface layer and LPVCS as the polymer precursor. The microstructural evolution of the fiber/matrix interface was studied. The porosity, mechanical properties, thermal and electrical conductivities of the SiC/SiC composite were investigated. The results indicated that the high densification efficiency of the liquid precursor LPVCS resulted in a low porosity of the SiC/SiC composite. The SiC/SiC composite exhibited non-brittle fracture behavior, however, bending strength and fracture toughness of the composite were relatively low because of the absence of CNTs as the interface layer. The thermal and electrical conductivities of the SiC/SiC composite were low enough to meet the requirements desired for flow channel insert (FCI) applications.

  6. The Osteometrical Characteristics of Mandibles of Sus Scrofa Population in the Czech Republic (České Budějovice) in Comparison with Sus Scrofa Population in Chile and Japan

    Czech Academy of Sciences Publication Activity Database

    Dvořáková-Líšková, Zuzana; Hanzal, V.; Janiszewski, P.

    3/13, č. 3 (2007), s. 42-51 ISSN 0909-6396 R&D Projects: GA MŠk(CZ) 1P05OC060 Institutional research plan: CEZ:AV0Z60870520 Keywords : Sus Scrofa * osteometry Subject RIV: EG - Zoology Impact factor: 0.894, year: 2007

  7. Influence of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi2/n-Si heterojunction solar cells

    Directory of Open Access Journals (Sweden)

    Ryota Takabe

    2016-08-01

    Full Text Available Fabrication of p-BaSi2(20nm/n-Si heterojunction solar cells was performed with different a-Si capping layer thicknesses (da-Si and varying air exposure durations (tair prior to the formation of a 70-nm-thick indium-tin-oxide electrode. The conversion efficiencies (η reached approximately 4.7% regardless of tair (varying from 12–150 h for solar cells with da-Si = 5 nm. In contrast, η increased from 5.3 to 6.6% with increasing tair for those with da-Si = 2 nm, in contrast to our prediction. For this sample, the reverse saturation current density (J0 and diode ideality factor decreased with tair, resulting in the enhancement of η. The effects of the variation of da-Si (0.7, 2, 3, and 5 nm upon the solar cell performance were examined while keeping tair = 150 h. The η reached a maximum of 9.0% when da-Si was 3 nm, wherein the open-circuit voltage and fill factor also reached a maximum. The series resistance, shunt resistance, and J0 exhibited a tendency to decrease as da-Si increased. These results demonstrate that a moderate oxidation of BaSi2 is a very effective means to enhance the η of BaSi2 solar cells.

  8. Palladium transport in SiC

    Energy Technology Data Exchange (ETDEWEB)

    Olivier, E.J., E-mail: jolivier@nmmu.ac.za [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. Black-Right-Pointing-Pointer The high temperature mobility of palladium silicides within polycrystalline SiC was studied. Black-Right-Pointing-Pointer Corrosion of SiC by Pd was seen in all cases. Black-Right-Pointing-Pointer The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. Black-Right-Pointing-Pointer The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd{sub 2}Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  9. Los padres como observadores de la calidad de vida de sus hijos implantados cocleares

    Directory of Open Access Journals (Sweden)

    Silvia Andrea BORKOSKI-BARREIRO

    2017-06-01

    Full Text Available Introducción y objetivo: El concepto de calidad de vida ha comenzado a utilizarse cada vez más en el campo de las evaluaciones en salud. Se ha empezado a investigar los efectos de la implantación a nivel del desarrollo social y emocional del niño. El objetivo es examinar los resultados de la salud relacionados con la calidad de vida en niños sordos implantados cocleares de entre 11 y 12 años de edad y sus padres. Método: Estudio observacional, descriptivo transversal en 24 niños prelocutivos implantados unilaterales o bilaterales sucesivos de 11 y 12 años de edad y sus padres. Utilizando el cuestionario de calidad de vida pediátrica PedsQL™ (Versión 4.0, español para España, para medir la salud relacionados con la calidad de vida, completado de forma independiente por niños y padres respectivamente. Resultados: Mediante la T-Student los resultados de niños y padres en las diferentes escalas evaluadas observamos que en las escalas de funcionamiento emocional y académica es donde se obtienen resultados estadísticamente significativos (p <0,05. Al comparar el resultado total del cuestionario con las diferentes escalas evaluadas, en todas ellas se obtienen resultados estadísticamente significativos (p <0,05. Discusión: Probado el éxito del implante coclear en las áreas del habla y del lenguaje, esto nos lleva actualmente a preguntas más allá de estas áreas; el rendimiento en el hogar, en la escuela y en diferentes contextos sociales. Pocos estudios exploran a través de entrevistas o cuestionarios las expectativas de los padres y la percepción de la calidad de vida de sus hijos usuarios de implantes coclear. Conclusiones: Los resultados del estudio muestran que los niños disfrutan de los beneficios del uso de su implante coclear. Ellos reportan beneficios en todas las áreas estudiadas (física, emocional, social y académica. Los padres son periodistas válidos sobre el estado de la calidad de vida global de sus hijos ya

  10. Moessbauer and channeling experiments on TeSi and SmSi

    International Nuclear Information System (INIS)

    Kemerink, G.J.; Boerma, D.O.; Waard, H. de; Wit, J.C. de; Drentje, S.A.

    1980-01-01

    Considerable effort is made to obtain an insight in the structural and electronic properties of ion implanted elemental semiconductors. This research is strongly stimulated by the many applications of semi-conductor devices. We report here on Moessbauer studies of 129 TeSi and 153 SmSi, using the 27.8 keV transition in 129 I and the 103.2 keV transition in 153 Eu, respectively, and on channeling experiments on 128 TeSi and 152 SmSi with a 2 MeV α-beam from the Groningen Van de Graaff generator. In the Moessbauer experiments we used Cu 129 I and EuF 3 .1/2H 2 O as absorber materials. Source and absorber were held at 4.2 K. The implantations were generally done at room temperature with an implantation energy of 100-115 keV. For the Moessbauer and channeling measurements we applied similar Si single crystals and the same implantation and annealing conditions. Crystals with low doses could only be investigated with the Moessbauer effect

  11. Light emissions from LiNbO sub 3 /SiO sub 2 /Si structures

    CERN Document Server

    Wu, X L; Tang, N; Deng, S S; Bao, X M

    2003-01-01

    LiNbO sub 3 (LN) films with a high degree of (006) texture were deposited on Si-based dense SiO sub 2 layers by pulsed laser deposition. After annealing, the LN/SiO sub 2 /Si structures were revealed to have ultraviolet-, green-, and red-emitting properties related to self-trapped excitons and E' defect pairs in the SiO sub 2 surface, which are induced by the photorefractive effect of the LN films. The emission wavelength can be tuned by introducing different dopants into the LN films. Waveguiding properties of the structures were demonstrated. The results obtained indicate that the LN/SiO sub 2 /Si structures could be expected to have important applications in modern optoelectronic integration. (letter to the editor)

  12. Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures

    International Nuclear Information System (INIS)

    Lin, Chih-Ming; Lien, Wei-Cheng; Riekkinen, Tommi; Senesky, Debbie G; Pisano, Albert P; Chen, Yung-Yu; Felmetsger, Valery V

    2013-01-01

    Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s −1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments. (paper)

  13. β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering

    Science.gov (United States)

    Hong, Li; Hongbin, Pu; Chunlei, Zheng; Zhiming, Chen

    2015-06-01

    β-FeSi2 thin films have been successfully prepared by magnetron sputtering and post rapid thermal annealing method on 6H-SiC (0001) substrates using a FeSi2 target and a Si target. X-ray diffraction (XRD) and Raman spectroscopy are applied to analyze the formation of β-FeSi2 films. XRD spectra reveal that the amorphous FeSi2 films are transformed to β-FeSi2 phase as the annealing temperature is increased from 500 to 900 °C for 5 min and the optimal annealing temperature is 900 °C. The formation of β-FeSi2 is also confirmed by Raman spectroscopy. Scanning electron microscope (SEM) observations indicate that the film is flat, relatively compact and the interface between β-FeSi2 and 6H-SiC is clear. Atomic force microscope (AFM) measurements demonstrate that the surface roughness confirmed by the root mean square (RMS) of the β-FeSi2 film is 0.87 nm. Near-infrared spectrophotometer observation shows that the absorption coefficient is of the order of 105 cm-1 and the optical band-gap of the β-FeSi2 film is 0.88 eV. The β-FeSi2 film with high crystal quality is fabricated by co-sputtering a FeSi2 target and a Si target for 60 min and annealing at 900 °C for 5 min. Project supported by the National Natural Science Foundation of China (No. 51177134) and the Natural Science Basic Research Plan in Shaanxi Province of China (No. 2015JM6286).

  14. Specimen size effect considerations for irradiation studies of SiC/SiC

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Henager, C.H. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

    1996-10-01

    For characterization of the irradiation performance of SiC/SiC, limited available irradiation volume generally dictates that tests be conducted on a small number of relatively small specimens. Flexure testing of two groups of bars with different sizes cut from the same SiC/SiC plate suggested the following lower limits for flexure specimen number and size: Six samples at a minimum for each condition and a minimum bar size of 30 x 6.0 x 2.0 mm{sup 3}.

  15. Las familias homoparentales y sus redes de apoyo social

    OpenAIRE

    González Rodríguez, María del Mar; Sánchez, M. Ángeles

    2003-01-01

    Este trabajo tiene como objetivo avanzar en conocimiento con respecto a las familias homoparentales, estudiando sus redes de apoyo social, aspecto crucial en cualquier contexto familiar. Se estudiaron 28 familias homoparentales con hijos o hijas entre los 3 y los 16 años. De ellas, 15 provenían de la Comunidad Andaluza y 13 de la Comunidad de Madrid. Los resultados indican que estas familias disponen de una red amplia de figuras de apoyo, que incluye tanto a familiares como a amistades, así c...

  16. Analysis on the sequence of formation of Ti{sub 3}SiC{sub 2} and Ti{sub 3}SiC{sub 2}/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Radhakrishnan, R.; Bhaduri, S.B. [Idaho Univ., Moscow, ID (United States). Dept. of Mining and Metallurgy; Henager, C.H. Jr. [Pacific Northwest Lab., Richland, WA (United States)

    1995-05-01

    Ti{sub 3}SiC{sub 2}, a compound in the ternary Ti-Si-C system, is reported to be ductile. This paper reports the sequence of formation of Ti{sub 3}SiC{sub 2} and Ti{sub 3}SiC{sub 2}/SiC composites involving either combustion synthesis or by displacement reaction, respectively. Onset of exothermic reaction temperatures were determined using Differential Thermal Analysis (DTA). Phases present after the exothermic temperatures were analyzed by X-Ray diffraction. Based on these observations, a route to formation of Ti{sub 3}SiC{sub 2} and Ti{sub 3}SiC{sub 2}/SiC composites is proposed for the two`s thesis methods.

  17. X-ray absorption spectroscopy study on SiC-side interface structure of SiO2–SiC formed by thermal oxidation in dry oxygen

    Science.gov (United States)

    Isomura, Noritake; Kosaka, Satoru; Kataoka, Keita; Watanabe, Yukihiko; Kimoto, Yasuji

    2018-06-01

    Extended X-ray absorption fine structure (EXAFS) spectroscopy is demonstrated to measure the fine atomic structure of SiO2–SiC interfaces. The SiC-side of the interface can be measured by fabricating thin SiO2 films and using SiC-selective EXAFS measurements. Fourier transforms of the oscillations of the EXAFS spectra correspond to radial-structure functions and reveal a new peak of the first nearest neighbor of Si for m-face SiC, which does not appear in measurements of the Si-face. This finding suggests that the m-face interface could include a structure with shorter Si–C distances. Numerical calculations provide additional support for this finding.

  18. Investigation on fabrication of SiC/SiC composite as a candidate material for fuel sub-assembly

    International Nuclear Information System (INIS)

    Lee, Jae-Kwang; Naganuma, Masayuki; Park, Joon-Soo; Kohyama, Akira

    2005-01-01

    The possibility of SiC/SiC (Silicon carbide fiber reinforced Silicon carbide) composites application for fuel sub-assembly of Fast Breeder Reactor was investigated. To select a raw material of SiC/SiC composites, a few kinds of SiC nano powder was estimated by SEM observation and XRD analysis. Furthermore, SiC monolithic was sintered from them and estimated by flexural test. SiC nano-powder which showed good sinterability, it was used for fabrication of SiC/SiC composites by Hot Pressing method. From the sintering condition of 1800, 1820degC temperature and 15, 20 MPa pressure, SiC/SiC composite was fabricated and then estimated by tensile test. SiC/SiC composite, which made by 1820degC and 20 MPa condition, showed the highest mechanical strength by the monotonic tensile test. SiC/SiC composite, which made by 1800degC and 15 MPa condition, showed a stable fracture behavior at the monotonic and cyclic tensile test. And then, the hoop stress of ideal model of SiC/SiC composites was discussed. It was confirmed that applicability of SiC/SiC composites by Hot Pressing method for fuel sub-assembly structural material. To make it real attractive one, to maintain the reliability and safety as a high temperature structural material, the design and process study on SiC/Sic composites material will be continued. (author)

  19. Phenomenological inelastic constitutive equations for SiC and SiC fibers under irradiation

    International Nuclear Information System (INIS)

    El-Azab, A.; Ghoniem, N.M.

    1994-01-01

    Experimental data on irradiation-induced dimensional changes and creep in β-SiC and SiC fibers is analyzed, with the objective of studying the constitutive behavior of these materials under high-temperature irradiation. The data analysis includes empirical representation of irradiation-induced dimensional changes in SiC matrix and SiC fibers as function of time and irradiation temperature. The analysis also includes formulation of simple scaling laws to extrapolate the existing data to fusion conditions on the basis of the physical mechanisms of radiation effects on crystalline solids. Inelastic constitutive equations are then developed for SCS-6 SiC fibers, Nicalon fibers and CVD SiC. The effects of applied stress, temperature, and irradiation fields on the deformation behavior of this class of materials are simultaneously represented. Numerical results are presented for the relevant creep functions under the conditions of the fusion reactor (ARIES IV) first wall. The developed equations can be used in estimating the macro mechanical properties of SiC-SiC composite systems as well as in performing time-dependent micro mechanical analysis that is relevant to slow crack growth and fiber pull-out under fusion conditions

  20. Si cycling in a forest biogeosystem - the importance of transient state biogenic Si pools

    Science.gov (United States)

    Sommer, M.; Jochheim, H.; Höhn, A.; Breuer, J.; Zagorski, Z.; Busse, J.; Barkusky, D.; Meier, K.; Puppe, D.; Wanner, M.; Kaczorek, D.

    2013-07-01

    The relevance of biological Si cycling for dissolved silica (DSi) export from terrestrial biogeosystems is still in debate. Even in systems showing a high content of weatherable minerals, like Cambisols on volcanic tuff, biogenic Si (BSi) might contribute > 50% to DSi (Gerard et al., 2008). However, the number of biogeosystem studies is rather limited for generalized conclusions. To cover one end of controlling factors on DSi, i.e., weatherable minerals content, we studied a forested site with absolute quartz dominance (> 95%). Here we hypothesise minimal effects of chemical weathering of silicates on DSi. During a four year observation period (05/2007-04/2011), we quantified (i) internal and external Si fluxes of a temperate-humid biogeosystem (beech, 120 yr) by BIOME-BGC (version ZALF), (ii) related Si budgets, and (iii) Si pools in soil and beech, chemically as well as by SEM-EDX. For the first time two compartments of biogenic Si in soils were analysed, i.e., phytogenic and zoogenic Si pool (testate amoebae). We quantified an average Si plant uptake of 35 kg Si ha-1 yr-1 - most of which is recycled to the soil by litterfall - and calculated an annual biosilicification from idiosomic testate amoebae of 17 kg Si ha-1. The comparatively high DSi concentrations (6 mg L-1) and DSi exports (12 kg Si ha-1 yr-1) could not be explained by chemical weathering of feldspars or quartz dissolution. Instead, dissolution of a relictic, phytogenic Si pool seems to be the main process for the DSi observed. We identified canopy closure accompanied by a disappearance of grasses as well as the selective extraction of pine trees 30 yr ago as the most probable control for the phenomena observed. From our results we concluded the biogeosystem to be in a transient state in terms of Si cycling.

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