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Sample records for surface-emitting laser vcsel

  1. VCSELs Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers

    CERN Document Server

    2013-01-01

    The huge progress which has been achieved in the field is covered here, in the first comprehensive monograph on vertical-cavity surface-emitting lasers (VCSELs) since eight years. Apart from chapters reviewing the research field and the laser fundamentals, there are comprehensive updates on red and blue emitting VCSELs, telecommunication VCSELs, optical transceivers, and parallel-optical links for computer interconnects. Entirely new contributions are made to the fields of vectorial three-dimensional optical modeling, single-mode VCSELs, polarization control, polarization dynamics, very-high-speed design, high-power emission, use of high-contrast gratings, GaInNAsSb long-wavelength VCSELs, optical video links, VCSELs for optical mice and sensing, as well as VCSEL-based laser printing. The book appeals to researchers, optical engineers and graduate students.

  2. Proton irradiation effects in oxide-confined vertical cavity surface emitting laser (VCSEL) diodes

    International Nuclear Information System (INIS)

    Barnes, C.E.; Swift, G.M.; Guertin, S.; Schwank, J.R.; Armendariz, M.G.; Hash, G.L.; Choquette, K.D.

    1999-01-01

    Vertical cavity surface emitting laser (VCSEL) diodes are employed as the emitter portion of opto-couplers that are used in space applications. Proton irradiation studies on VCSELs were performed at the Indiana University cyclotron facility. The beam energy was set at 192 MeV, the beam current was 200 nA that is equivalent to a flux of approximately 1*10 11 protons/cm 2 .s. We conclude that the oxide confined VCSELs examined in this study show more than sufficient radiation hardness for nearly all space applications. The observed proton-induced decreases in light output and the corresponding increases in laser threshold current can be explained in terms of proton-induced displacement damage which introduces non-radiative recombination centers in the active region of the lasers and causes a decrease in laser efficiency. These radiation effects accentuate the detrimental thermal effects observed at high currents. We also note that forward bias annealing is effective in these devices in producing at least partial recovery of the light output, and that this may be a viable hardness assurance technique during a flight mission. (A.C.)

  3. Proton Irradiation Effects in Oxide-Confined Vertical Cavity Surface Emitting Laser (VCSEL) Diodes

    International Nuclear Information System (INIS)

    Armendariz, M.G.; Barnes, C.E.; Choquette, K.D.; Guertin, S.; Hash, G.L.; Schwank, J.R.; Swift, G.M.

    1999-01-01

    Recent space experience has shown that the use of commercial optocouplers can be problematic in spacecraft, such as TOPEX/Poseidon, that must operate in significant radiation environments. Radiation--induced failures of these devices have been observed in space and have been further documented at similar radiation doses in the laboratory. The ubiquitous use of optocouplers in spacecraft systems for a variety of applications, such as electrical isolation, switching and power transfer, is indicative of the need for optocouplers that can withstand the space radiation environment. In addition, the distributed nature of their use implies that it is not particularly desirable to shield optocouplers for use in radiation environments. Thus, it will be important for the space community to have access to radiation hardened/tolerant optocouplers. For many microelectronic and photonic devices, it is difficult to achieve radiation hardness without sacrificing performance. However, in the case of optocouplers, one should be able to achieve both superior radiation hardness and performance for such characteristics as switching speed, current transfer ratio (CTR), minimum power usage and array power transfer, if standard light emitting diodes (LEDs), such as those in the commercial optocouplers mentioned above, are avoided, and VCSELs are employed as the emitter portion of the optocoupler. The physical configuration of VCSELs allows one to achieve parallel use of an array of devices and construct a multichannel optocoupler in the standard fashion with the emitters and detectors looking at each other. In addition, detectors similar in structure to the VCSELs can be fabricated which allows bidirectional functionality of the optocoupler. Recent discussions suggest that VCSELs will enjoy widespread applications in the telecommunications and data transfer fields

  4. An iterative model for the steady state current distribution in oxide-confined vertical-cavity surface-emitting lasers (VCSELs)

    Science.gov (United States)

    Chuang, Hsueh-Hua

    The purpose of this dissertation is to develop an iterative model for the analysis of the current distribution in vertical-cavity surface-emitting lasers (VCSELs) using a circuit network modeling approach. This iterative model divides the VCSEL structure into numerous annular elements and uses a circuit network consisting of resistors and diodes. The measured sheet resistance of the p-distributed Bragg reflector (DBR), the measured sheet resistance of the layers under the oxide layer, and two empirical adjustable parameters are used as inputs to the iterative model to determine the resistance of each resistor. The two empirical values are related to the anisotropy of the resistivity of the p-DBR structure. The spontaneous current, stimulated current, and surface recombination current are accounted for by the diodes. The lateral carrier transport in the quantum well region is analyzed using drift and diffusion currents. The optical gain is calculated as a function of wavelength and carrier density from fundamental principles. The predicted threshold current densities for these VCSELs match the experimentally measured current densities over the wavelength range of 0.83 mum to 0.86 mum with an error of less than 5%. This model includes the effects of the resistance of the p-DBR mirrors, the oxide current-confining layer and spatial hole burning. Our model shows that higher sheet resistance under the oxide layer reduces the threshold current, but also reduces the current range over which single transverse mode operation occurs. The spatial hole burning profile depends on the lateral drift and diffusion of carriers in the quantum wells but is dominated by the voltage drop across the p-DBR region. To my knowledge, for the first time, the drift current and the diffusion current are treated separately. Previous work uses an ambipolar approach, which underestimates the total charge transferred in the quantum well region, especially under the oxide region. However, the total

  5. Vertical-cavity surface-emitting lasers for medical diagnosis

    DEFF Research Database (Denmark)

    Ansbæk, Thor

    This thesis deals with the design and fabrication of tunable Vertical-Cavity Surface-Emitting Lasers (VCSELs). The focus has been the application of tunable VCSELs in medical diagnostics, specifically OCT. VCSELs are candidates as light sources for swept-source OCT where their high sweep rate, wide...

  6. Systematic characterization of a 1550 nm microelectromechanical (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) with 7.92 THz tuning range for terahertz photomixing systems

    Science.gov (United States)

    Haidar, M. T.; Preu, S.; Cesar, J.; Paul, S.; Hajo, A. S.; Neumeyr, C.; Maune, H.; Küppers, F.

    2018-01-01

    Continuous-wave (CW) terahertz (THz) photomixing requires compact, widely tunable, mode-hop-free driving lasers. We present a single-mode microelectromechanical system (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) featuring an electrothermal tuning range of 64 nm (7.92 THz) that exceeds the tuning range of commercially available distributed-feedback laser (DFB) diodes (˜4.8 nm) by a factor of about 13. We first review the underlying theory and perform a systematic characterization of the MEMS-VCSEL, with particular focus on the parameters relevant for THz photomixing. These parameters include mode-hop-free CW tuning with a side-mode-suppression-ratio >50 dB, a linewidth as narrow as 46.1 MHz, and wavelength and polarization stability. We conclude with a demonstration of a CW THz photomixing setup by subjecting the MEMS-VCSEL to optical beating with a DFB diode driving commercial photomixers. The achievable THz bandwidth is limited only by the employed photomixers. Once improved photomixers become available, electrothermally actuated MEMS-VCSELs should allow for a tuning range covering almost the whole THz domain with a single system.

  7. Emerging applications for vertical cavity surface emitting lasers

    International Nuclear Information System (INIS)

    Harris, J S; O'sullivan, T; Sarmiento, T; Lee, M M; Vo, S

    2011-01-01

    Vertical cavity surface emitting lasers (VCSELs) emitting at 850 nm have experienced explosive growth in the past decade because of their many attractive optical features and incredibly low-cost manufacturability. This review reviews the foundations for GaAs-based VCSEL technology as well as the materials and device challenges to extend the operating wavelength to both shorter and longer wavelengths. We discuss some of the applications that are enabled by the integration of VCSELs with both active and passive semiconductor elements for telecommunications, both in vivo and in vitro biosensing, high-density optical storage and imaging at wavelengths much less than the diffraction limit of light

  8. 20 Gbit/s error free transmission with ~850 nm GaAs-based vertical cavity surface emitting lasers (VCSELs) containing InAs-GaAs submonolayer quantum dot insertions

    Science.gov (United States)

    Lott, J. A.; Shchukin, V. A.; Ledentsov, N. N.; Stinz, A.; Hopfer, F.; Mutig, A.; Fiol, G.; Bimberg, D.; Blokhin, S. A.; Karachinsky, L. Y.; Novikov, I. I.; Maximov, M. V.; Zakharov, N. D.; Werner, P.

    2009-02-01

    We report on the modeling, epitaxial growth, fabrication, and characterization of 830-845 nm vertical cavity surface emitting lasers (VCSELs) that employ InAs-GaAs quantum dot (QD) gain elements. The GaAs-based VCSELs are essentially conventional in design, grown by solid-source molecular beam epitaxy, and include top and bottom gradedheterointerface AlGaAs distributed Bragg reflectors, a single selectively-oxidized AlAs waveguiding/current funneling aperture layer, and a quasi-antiwaveguiding microcavity. The active region consists of three sheets of InAs-GaAs submonolayer insertions separated by AlGaAs matrix layers. Compared to QWs the InAs-GaAs insertions are expected to offer higher exciton-dominated modal gain and improved carrier capture and retention, thus resulting in superior temperature stability and resilience to degradation caused by operating at the larger switching currents commonly employed to increase the data rates of modern optical communication systems. We investigate the robustness and temperature performance of our QD VCSEL design by fabricating prototype devices in a high-frequency ground-sourceground contact pad configuration suitable for on-wafer probing. Arrays of VCSELs are produced with precise variations in top mesa diameter from 24 to 36 μm and oxide aperture diameter from 1 to 12 μm resulting in VCSELs that operate in full single-mode, single-mode to multi-mode, and full multi-mode regimes. The single-mode QD VCSELs have room temperature threshold currents below 0.5 mA and peak output powers near 1 mW, whereas the corresponding values for full multi-mode devices range from about 0.5 to 1.5 mA and 2.5 to 5 mW. At 20°C we observe optical transmission at 20 Gb/s through 150 m of OM3 fiber with a bit error ratio better than 10-12, thus demonstrating the great potential of our QD VCSELs for applications in next-generation short-distance optical data communications and interconnect systems.

  9. Ring cavity surface emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Mujagic, E.

    2010-01-01

    Quantum cascade lasers (QCLs) are electrically driven semiconductor lasers, which have undergone a steady improvement since the first demonstration in 1994. These are now well established as reliable sources of coherent light in the mid-infrared (MIR) and terahertz (THz)range of the electromagnetic spectrum (3-300 μm). The rapid progress of this type of lasers is based on a high degree of freedom in tailoring the emission wavelength within a large variety of semiconductor heterostructure designs and materials. These properties have attracted the attention of various applications such as gas analysis, chemical sensing, spectral imaging and free-space telecommunication. In order to improve the selectivity, sensitivity and efficiency of today's sensor systems, high optical power, continuous wave and room temperature performance, single-mode operation and low divergence optical beams, are highly desirable qualities of a compact laser source in this field of research. Since all of these features cannot be provided by a conventional edge-emitting device at the same time, research has put focus on the development of surface emitting devices. Nowadays, the vertical cavity surface emitting lasers (VCSELs) are the most prominent representative for this type of light emitters. With its capability of producing narrow circular beams, the feasibility of two-dimensional arrays and on-wafer testing, such a coherent light source results in a reduction of the fabrication effort and production costs. Since the radiation in QCLs is strictly polarized normal to the epitaxial layer plane, fabrication of VCSELs based on QC structures is not viable. The subject of this work is the design and realization of 'ring cavity surface emitting lasers' (ring-CSELs). This type of lasers employs a circular ring cavity and a resonant distributed feedback (DFB) surface grating. Ring-CSELs were fabricated on the basis of MIR and THz QC structures, which cover a wavelength range from 4 μm to 93

  10. Vertical-cavity surface-emitting laser vapor sensor using swelling polymer reflection modulation

    DEFF Research Database (Denmark)

    Ansbæk, Thor; Nielsen, Claus Højgård; Dohn, Søren

    2012-01-01

    Vapor detection using a low-refractive index polymer for reflection modulation of the top mirror in a vertical-cavity surface-emitting laser (VCSEL) is demonstrated. The VCSEL sensor concept presents a simple method to detect the response of a sensor polymer in the presence of volatile organic...

  11. Polymer-coated vertical-cavity surface-emitting laser diode vapor sensor

    DEFF Research Database (Denmark)

    Ansbæk, Thor; Nielsen, Claus Højgaard; Larsen, Niels Bent

    2010-01-01

    We report a new method for monitoring vapor concentration of volatile organic compounds using a vertical-cavity surface-emitting laser (VCSEL). The VCSEL is coated with a polymer thin film on the top distributed Bragg reflector (DBR). The analyte absorption is transduced to the electrical domain ...

  12. Submonolayer Quantum Dots for High Speed Surface Emitting Lasers

    Directory of Open Access Journals (Sweden)

    Zakharov ND

    2007-01-01

    Full Text Available AbstractWe report on progress in growth and applications of submonolayer (SML quantum dots (QDs in high-speed vertical-cavity surface-emitting lasers (VCSELs. SML deposition enables controlled formation of high density QD arrays with good size and shape uniformity. Further increase in excitonic absorption and gain is possible with vertical stacking of SML QDs using ultrathin spacer layers. Vertically correlated, tilted or anticorrelated arrangements of the SML islands are realized and allow QD strain and wavefunction engineering. Respectively, both TE and TM polarizations of the luminescence can be achieved in the edge-emission using the same constituting materials. SML QDs provide ultrahigh modal gain, reduced temperature depletion and gain saturation effects when used in active media in laser diodes. Temperature robustness up to 100 °C for 0.98 μm range vertical-cavity surface-emitting lasers (VCSELs is realized in the continuous wave regime. An open eye 20 Gb/s operation with bit error rates better than 10−12has been achieved in a temperature range 25–85 °Cwithout current adjustment. Relaxation oscillations up to ∼30 GHz have been realized indicating feasibility of 40 Gb/s signal transmission.

  13. Ultrafast directional beam switching in coupled vertical-cavity surface-emitting lasers

    International Nuclear Information System (INIS)

    Ning, C. Z.; Goorjian, P.

    2001-01-01

    We propose a strategy to performing ultrafast directional beam switching using two coupled vertical-cavity surface-emitting lasers (VCSELs). The proposed strategy is demonstrated for two VCSELs of 5.6 μm in diameter placed about 1 μm apart from the edges, showing a switching speed of 42 GHz with a maximum far-field angle span of about 10 degree. [copyright] 2001 American Institute of Physics

  14. Sub-monolayer dot vertical-cavity surface-emitting lasers

    International Nuclear Information System (INIS)

    Blokhin, S.A.; Maleev, N.A.; Kuz'menkov, A.G.

    2006-01-01

    Vertical-cavity surface-emitting lasers (VCSELs) based on submonolayer InGaAs quantum-dot active region and doped with AlGaAs/GaAs distributed Bragg reflectors were grown by molecular beam epitaxy. 3 μm aperture single-mode VCSELs demonstrate lasing at 980 nm with threshold current of 0.6 mA, maximum output power of 4 mW and external differential efficiency as high as 68%. Ultimately low internal optical losses were measured for these multimode sub-monolayer quantum dot VCSELs [ru

  15. Acetone vapor sensing using a vertical cavity surface emitting laser diode coated with polystyrene

    DEFF Research Database (Denmark)

    Ansbæk, Thor; Nielsen, Claus Højgaard; Larsen, Niels Bent

    2009-01-01

    We report theoretical and experimental on a new vapor sensor, using a single-mode vertical-cavity surface-emitting laser (VCSEL) coated with a polymer sensor coating, which can detect acetone vapor at a volume fraction of 2.5%. The sensor provides the advantage of standard packaging, small form...

  16. High-power, format-flexible, 885-nm vertical-cavity surface-emitting laser arrays

    Science.gov (United States)

    Wang, Chad; Talantov, Fedor; Garrett, Henry; Berdin, Glen; Cardellino, Terri; Millenheft, David; Geske, Jonathan

    2013-03-01

    High-power, format flexible, 885 nm vertical-cavity surface-emitting laser (VCSEL) arrays have been developed for solid-state pumping and illumination applications. In this approach, a common VCSEL size format was designed to enable tiling into flexible formats and operating configurations. The fabrication of a common chip size on ceramic submount enables low-cost volume manufacturing of high-power VCSEL arrays. This base VCSEL chip was designed to be 5x3.33 mm2, and produced up to 50 Watts of peak continuous wave (CW) power. To scale to higher powers, multiple chips can be tiled into a combination of series or parallel configurations tailored to the application driver conditions. In actively cooled CW operation, the VCSEL array chips were packaged onto a single water channel cooler, and we have demonstrated 0.5x1, 1x1, and 1x3 cm2 formats, producing 150, 250, and 500 Watts of peak power, respectively, in under 130 A operating current. In QCW operation, the 1x3 cm2 VCSEL module, which contains 18 VCSEL array chips packaged on a single water cooler, produced over 1.3 kW of peak power. In passively cooled packages, multiple chip configurations have been developed for illumination applications, producing over 300 Watts of peak power in QCW operating conditions. These VCSEL chips use a substrate-removed structure to allow for efficient thermal heatsinking to enable high-power operation. This scalable, format flexible VCSEL architecture can be applied to wavelengths ranging from 800 to 1100 nm, and can be used to tailor emission spectral widths and build high-power hyperspectral sources.

  17. Exploiting broad-area surface emitting lasers to manifest the path-length distributions of finite-potential quantum billiards.

    Science.gov (United States)

    Yu, Y T; Tuan, P H; Chang, K C; Hsieh, Y H; Huang, K F; Chen, Y F

    2016-01-11

    Broad-area vertical-cavity surface-emitting lasers (VCSELs) with different cavity sizes are experimentally exploited to manifest the influence of the finite confinement strength on the path-length distribution of quantum billiards. The subthreshold emission spectra of VCSELs are measured to obtain the path-length distributions by using the Fourier transform. It is verified that the number of the resonant peaks in the path-length distribution decreases with decreasing the confinement strength. Theoretical analyses for finite-potential quantum billiards are numerically performed to confirm that the mesoscopic phenomena of quantum billiards with finite confinement strength can be analogously revealed by using broad-area VCSELs.

  18. Vertical cavity surface emitting lasers from all-inorganic perovskite quantum dots

    Science.gov (United States)

    Sun, Handong; Wang, Yue; Li, Xiaoming; Zeng, Haibo

    We report the breakthrough in realizing the challenging while practically desirable vertical cavity surface emitting lasers (VCSELs) based on the CsPbX3 inorganic perovskite nanocrystals (IPNCs). These laser devices feature record low threshold (9 µJ/cm2), unidirectional output (beam divergence of 3.6º) and superb stability. We show that both single-mode and multimode lasing operation are achievable in the device. In contrast to traditional metal chacogenide colloidal quantum dots based lasers where the pump thresholds for the green and blue wavelengths are typically much higher than that of the red, these CsPbX3 IPNC-VCSEL devices are able to lase with comparable thresholds across the whole visible spectral range, which is appealing for achieving single source-pumped full-color lasers. We further reveal that these lasers can operate in quasi-steady state regime, which is very practical and cost-effective. Given the facile solution processibility, our CsPbX3 IPNC-VCSEL devices may hold great potential in developing low-cost yet high-performance lasers, promising in revolutionizing the vacuum-based epitaxial semiconductor lasers.

  19. VCSEL proliferation

    Science.gov (United States)

    Tatum, Jim

    2007-02-01

    Since the commercialization of Vertical Cavity Surface Emitting Lasers (VCSELs) in 1996, Finisar's Advanced Optical Components Division has shipped well over 50 Million VCSELs. The vast majority of these were shipped into the data communications industry, which was essentially the only volume application until 2005. The driver for VCSEL manufacturing might well shift to the increasingly popular laser based optical mouse. The advantages of the laser based mouse over traditional LED mice include operation on a wider range of surfaces, higher resolution, and increased battery lifetime. What is the next application that will drive growth in VCSELs? This paper will offer a historical perspective on the emergence of VCSELs from the laboratory to reality, and the companies that have played key roles in VCSEL commercialization. Furthermore, a perspective on the market needs of future VCSEL development and applications is described.

  20. Spin-controlled ultrafast vertical-cavity surface-emitting lasers

    Science.gov (United States)

    Höpfner, Henning; Lindemann, Markus; Gerhardt, Nils C.; Hofmann, Martin R.

    2014-05-01

    Spin-controlled semiconductor lasers are highly attractive spintronic devices providing characteristics superior to their conventional purely charge-based counterparts. In particular, spin-controlled vertical-cavity surface emitting lasers (spin-VCSELs) promise to offer lower thresholds, enhanced emission intensity, spin amplification, full polarization control, chirp control and ultrafast dynamics. Most important, the ability to control and modulate the polarization state of the laser emission with extraordinarily high frequencies is very attractive for many applications like broadband optical communication and ultrafast optical switches. We present a novel concept for ultrafast spin-VCSELs which has the potential to overcome the conventional speed limitation for directly modulated lasers by the relaxation oscillation frequency and to reach modulation frequencies significantly above 100 GHz. The concept is based on the coupled spin-photon dynamics in birefringent micro-cavity lasers. By injecting spin-polarized carriers in the VCSEL, oscillations of the coupled spin-photon system can by induced which lead to oscillations of the polarization state of the laser emission. These oscillations are decoupled from conventional relaxation oscillations of the carrier-photon system and can be much faster than these. Utilizing these polarization oscillations is thus a very promising approach to develop ultrafast spin-VCSELs for high speed optical data communication in the near future. Different aspects of the spin and polarization dynamics, its connection to birefringence and bistability in the cavity, controlled switching of the oscillations, and the limitations of this novel approach will be analysed theoretically and experimentally for spin-polarized VCSELs at room temperature.

  1. Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

    KAUST Repository

    Leonard, J. T.

    2016-03-01

    We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

  2. Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

    KAUST Repository

    Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Shen, Chao; Margalith, T.; Ng, Tien Khee; Denbaars, S. P.; Ooi, Boon S.; Speck, J. S.; Nakamura, S.

    2016-01-01

    We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

  3. Surface emitting ring quantum cascade lasers for chemical sensing

    Science.gov (United States)

    Szedlak, Rolf; Hayden, Jakob; Martín-Mateos, Pedro; Holzbauer, Martin; Harrer, Andreas; Schwarz, Benedikt; Hinkov, Borislav; MacFarland, Donald; Zederbauer, Tobias; Detz, Hermann; Andrews, Aaron Maxwell; Schrenk, Werner; Acedo, Pablo; Lendl, Bernhard; Strasser, Gottfried

    2018-01-01

    We review recent advances in chemical sensing applications based on surface emitting ring quantum cascade lasers (QCLs). Such lasers can be implemented in monolithically integrated on-chip laser/detector devices forming compact gas sensors, which are based on direct absorption spectroscopy according to the Beer-Lambert law. Furthermore, we present experimental results on radio frequency modulation up to 150 MHz of surface emitting ring QCLs. This technique provides detailed insight into the modulation characteristics of such lasers. The gained knowledge facilitates the utilization of ring QCLs in combination with spectroscopic techniques, such as heterodyne phase-sensitive dispersion spectroscopy for gas detection and analysis.

  4. Vertical Cavity Surface Emitting Laser for Operation at 1.5 µm with Integral AlGaInAs/InP Bragg mirrors

    OpenAIRE

    Linnik, M.; Christou, A.

    2001-01-01

    The design and performance of a low threshold selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) fabricated for operation at a wavelength of 1.55 µm is based on III-V quaternary semiconductor alloys and is grown by Molecular Beam Epitaxy technique. The theoretical investigation of the optical properties of the compound semiconductor alloys allows one to select the optimum materials for highly reflective Bragg mirrors. The simulation of the designed VCSEL performance has been ...

  5. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

    International Nuclear Information System (INIS)

    Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

    2015-01-01

    We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J th ) of ∼3.5 kA/cm 2 , compared to the ITO VCSEL J th of 8 kA/cm 2 . The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL

  6. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

    Energy Technology Data Exchange (ETDEWEB)

    Leonard, J. T., E-mail: jtleona01@gmail.com; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2015-08-31

    We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J{sub th}) of ∼3.5 kA/cm{sup 2}, compared to the ITO VCSEL J{sub th} of 8 kA/cm{sup 2}. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.

  7. 1.3 μm wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: A prospect for polarization control

    Science.gov (United States)

    Okuno, Yae L.; Geske, Jon; Gan, Kian-Giap; Chiu, Yi-Jen; DenBaars, Steven P.; Bowers, John E.

    2003-04-01

    We propose and demonstrate a long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of a (311)B InP-based active region and (100) GaAs-based distributed Bragg reflectors (DBRs), with an aim to control the in-plane polarization of output power. Crystal growth on (311)B InP substrates was performed under low-migration conditions to achieve good crystalline quality. The VCSEL was fabricated by wafer bonding, which enables us to combine different materials regardless of their lattice and orientation mismatch without degrading their quality. The VCSEL was polarized with a power extinction ratio of 31 dB.

  8. Optical Injection Locking of Vertical Cavity Surface-Emitting Lasers: Digital and Analog Applications

    Science.gov (United States)

    Parekh, Devang

    With the rise of mobile (cellphones, tablets, notebooks, etc.) and broadband wireline communications (Fiber to the Home), there are increasing demands being placed on transmitters for moving data from device to device and around the world. Digital and analog fiber-optic communications have been the key technology to meet this challenge, ushering in ubiquitous Internet and cable TV over the past 20 years. At the physical layer, high-volume low-cost manufacturing of semiconductor optoelectronic devices has played an integral role in allowing for deployment of high-speed communication links. In particular, vertical cavity surface emitting lasers (VCSEL) have revolutionized short reach communications and are poised to enter more markets due to their low cost, small size, and performance. However, VCSELs have disadvantages such as limited modulation performance and large frequency chirp which limits fiber transmission speed and distance, key parameters for many fiber-optic communication systems. Optical injection locking is one method to overcome these limitations without re-engineering the VCSEL at the device level. By locking the frequency and phase of the VCSEL by the direct injection of light from another laser oscillator, improved device performance is achieved in a post-fabrication method. In this dissertation, optical injection locking of VCSELs is investigated from an applications perspective. Optical injection locking of VCSELs can be used as a pathway to reduce complexity, cost, and size of both digital and analog fiber-optic communications. On the digital front, reduction of frequency chirp via bit pattern inversion for large-signal modulation is experimentally demonstrated showing up to 10 times reduction in frequency chirp and over 90 times increase in fiber transmission distance. Based on these results, a new reflection-based interferometric model for optical injection locking was established to explain this phenomenon. On the analog side, the resonance

  9. Development of a compact vertical-cavity surface-emitting laser end-pumped actively Q-switched laser for laser-induced breakdown spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shuo; Chen, Rongzhang; Nelsen, Bryan; Chen, Kevin, E-mail: pec9@pitt.edu [Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15260 (United States); Liu, Lei; Huang, Xi; Lu, Yongfeng [Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States)

    2016-03-15

    This paper reports the development of a compact and portable actively Q-switched Nd:YAG laser and its applications in laser-induced breakdown spectroscopy (LIBS). The laser was end-pumped by a vertical-cavity surface-emitting laser (VCSEL). The cavity lases at a wavelength of 1064 nm and produced pulses of 16 ns with a maximum pulse energy of 12.9 mJ. The laser exhibits a reliable performance in terms of pulse-to-pulse stability and timing jitter. The LIBS experiments were carried out using this laser on NIST standard alloy samples. Shot-to-shot LIBS signal stability, crater profile, time evolution of emission spectra, plasma electron density and temperature, and limits of detection were studied and reported in this paper. The test results demonstrate that the VCSEL-pumped solid-state laser is an effective and compact laser tool for laser remote sensing applications.

  10. Single-mode temperature and polarisation-stable high-speed 850nm vertical cavity surface emitting lasers

    International Nuclear Information System (INIS)

    Nazaruk, D E; Blokhin, S A; Maleev, N A; Bobrov, M A; Pavlov, M M; Kulagina, M M; Vashanova, K A; Zadiranov, Yu M; Ustinov, V M; Kuzmenkov, A G; Vasil'ev, A P; Gladyshev, A G; Blokhin, A A; Salut, 7 Larina Str, N Novgorod, 603950 (Russian Federation))" data-affiliation=" (JSV Salut, 7 Larina Str, N Novgorod, 603950 (Russian Federation))" >Fefelov, A G

    2014-01-01

    A new intracavity-contacted design to realize temperature and polarization-stable high-speed single-mode 850 nm vertical cavity surface emitting lasers (VCSELs) grown by molecular-beam epitaxy is proposed. Temperature dependences of static and dynamic characteristics of the 4.5 pm oxide aperture InGaAlAs VCSEL were investigated in detail. Due to optimal gain-cavity detuning and enhanced carrier localization in the active region the threshold current remains below 0.75 mA for the temperature range within 20-90°C, while the output power exceeds 1 mW up to 90°C. Single-mode operation with side-mode suppression ratio higher than 30 dB and orthogonal polarization suppression ratio more than 18 dB was obtained in the whole current and temperature operation range. Device demonstrates serial resistance less than 250 Ohm, which is rather low for any type of single-mode short- wavelength VCSELs. VCSEL demonstrates temperature robust high-speed operation with modulation bandwidth higher than 13 GHz in the entire temperature range of 20-90°C. Despite high resonance frequency the high-speed performance of developed VCSELs was limited by the cut-off frequency of the parasitic low pass filter created by device resistances and capacitances. The proposed design is promising for single-mode high-speed VCSEL applications in a wide spectral range

  11. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

    KAUST Repository

    Leonard, J. T.; Cohen, D. A.; Yonkee, B. P.; Farrell, R. M.; Margalith, T.; Lee, S.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

    2015-01-01

    © 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm2), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

  12. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

    KAUST Repository

    Leonard, J. T.

    2015-07-06

    © 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm2), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

  13. Transverse and polarization effects in index-guided vertical-cavity surface-emitting lasers

    International Nuclear Information System (INIS)

    Torre, M. S.; Masoller, C.; Mandel, Paul

    2006-01-01

    We study numerically the polarization dynamics of vertical-cavity surface-emitting lasers (VCSEL's) operating in the fundamental transverse mode. We use an extension of the spin-flip model that not only accounts for the vector nature of the laser field, but also considers spatial transverse effects. The model assumes two orthogonal, linearly polarized fields, which are coupled to two carrier populations, associated with different spin sublevels of the conduction and valence bands in the quantum-well active region. Spatial effects are taken into account by considering transverse profiles for the two polarizations, for the two carrier populations, and for the carrier diffusion. The optical profile is the LP 01 mode, suitable for describing index-guided VCSEL's with cylindrical symmetry emitting on the fundamental transverse mode for both polarizations. We find that in small-active-region VCSEL's, fast carrier diffusion induces self-sustained oscillations of the total laser output, which are not present in larger-area devices or with slow carrier diffusion. These self-pulsations appear close to threshold, and, as the injection current increases, they grow in amplitude; however, there is saturation and the self-pulsations disappear at higher injection levels. The dependence of the oscillation amplitude on various laser parameters is investigated, and the results are found to be in good qualitative agreement with those reported by Van der Sande et al. [Opt. Lett. 29, 53 (2004)], based on a rate-equation model that takes into account transverse inhomogeneities through an intensity-dependent confinement factor

  14. The simulation of thermal characteristics of 980 nm vertical cavity surface emitting lasers

    Science.gov (United States)

    Fang, Tianxiao; Cui, Bifeng; Hao, Shuai; Wang, Yang

    2018-02-01

    In order to design a single mode 980 nm vertical cavity surface emitting laser (VCSEL), a 2 μm output aperture is designed to guarantee the single mode output. The effects of different mesa sizes on the lattice temperature, the output power and the voltage are simulated under the condition of continuous working at room temperature, to obtain the optimum process parameters of mesa. It is obtained by results of the crosslight simulation software that the sizes of mesa radius are between 9.5 to 12.5 μm, which cannot only obtain the maximum output power, but also improve the heat dissipation of the device. Project supported by the Beijing Municipal Eduaction Commission (No. PXM2016_014204_500018) and the Construction of Scientific and Technological Innovation Service Ability in 2017 (No. PXM2017_014204_500034).

  15. A UWOC system based on a 6 m/5.2 Gbps 680 nm vertical-cavity surface-emitting laser

    Science.gov (United States)

    Li, Chung-Yi; Tsai, Wen-Shing

    2018-02-01

    This study proves that an underwater wireless optical communication (UWOC) based on a 6 m/5.2 Gbps 68 nm vertical-cavity surface-emitting laser (VCSEL)-based system is superior to a 405 nm UWOC system. This UWOC application is the first to use a VCSEL at approximately 680 nm. The experiment also proved that a 680 nm VCSEL has the same transmission distance as that of an approximately 405 nm laser diode. The 680 nm VCSEL has a 5.2 Gbps high transmission rate and can transmit up to 6 m. Thus, the setup is the best alternative solution for high-speed UWOC applications.

  16. VCSEL Based Coherent PONs

    DEFF Research Database (Denmark)

    Jensen, Jesper Bevensee; Rodes, Roberto; Caballero Jambrina, Antonio

    2014-01-01

    We present a review of research performed in the area of coherent access technologies employing vertical cavity surface emitting lasers (VCSELs). Experimental demonstrations of optical transmission over a passive fiber link with coherent detection using VCSEL local oscillators and directly modula...

  17. Operation of a novel hot-electron vertical-cavity surface-emitting laser

    Science.gov (United States)

    Balkan, Naci; O'Brien-Davies, Angela; Thoms, A. B.; Potter, Richard J.; Poolton, Nigel; Adams, Michael J.; Masum, J.; Bek, Alpan; Serpenguzel, Ali; Aydinli, Atilla; Roberts, John S.

    1998-07-01

    The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga1-xAlxAs p- n junction. It utilizes hot electron transport parallel to the layers and injection of hot electron hole pairs into the quantum well through a combination of mechanisms including tunnelling, thermionic emission and diffusion of `lucky' carriers. Super Radiant HELLISH-1 is an advanced structure incorporating a lower distributed Bragg reflector (DBR). Combined with the finite reflectivity of the upper semiconductor-air interface reflectivity it defines a quasi- resonant cavity enabling emission output from the top surface with a higher spectral purity. The output power has increased by two orders of magnitude and reduced the full width at half maximum (FWHM) to 20 nm. An upper DBR added to the structure defines HELLISH-VCSEL which is currently the first operational hot electron surface emitting laser and lases at room temperature with a 1.5 nm FWHM. In this work we demonstrate and compare the operation of UB-HELLISH-1 and HELLISH-VCSEL using experimental and theoretical reflectivity spectra over an extensive temperature range.

  18. Impact of optical feedback on current-induced polarization behavior of 1550 nm vertical-cavity surface-emitting lasers.

    Science.gov (United States)

    Deng, Tao; Wu, Zheng-Mao; Xie, Yi-Yuan; Wu, Jia-Gui; Tang, Xi; Fan, Li; Panajotov, Krassimir; Xia, Guang-Qiong

    2013-06-01

    Polarization switching (PS) between two orthogonal linearly polarized fundamental modes is experimentally observed in commercial free-running 1550 nm vertical-cavity surface-emitting lasers (VCSELs) (Raycan). The characteristics of this PS are strongly modified after introducing a polarization-preserved (PP) or polarization-orthogonal (PO) optical feedback. Under the case that the external cavity is approximately 30 cm, the PP optical feedback results in the PS point shifting toward a lower injection current, and the region within which the two polarization modes coexist is enlarged with the increase of the PP feedback strength. Under too-strong PP feedback levels, the PS disappears. The impact of PO optical feedback on VCSEL polarization behavior is quite similar to that of PP optical feedback, but larger feedback strength is needed to obtain similar results.

  19. Chaos synchronization in vertical-cavity surface-emitting laser based on rotated polarization-preserved optical feedback.

    Science.gov (United States)

    Nazhan, Salam; Ghassemlooy, Zabih; Busawon, Krishna

    2016-01-01

    In this paper, the influence of the rotating polarization-preserved optical feedback on the chaos synchronization of a vertical-cavity surface-emitting laser (VCSEL) is investigated experimentally. Two VCSELs' polarization modes (XP) and (YP) are gradually rotated and re-injected back into the VCSEL. The anti-phase dynamics synchronization of the two polarization modes is evaluated using the cross-correlation function. For a fixed optical feedback, a clear relationship is found between the cross-correlation coefficient and the polarization angle θp. It is shown that high-quality anti-phase polarization-resolved chaos synchronization is achieved at higher values of θp. The maximum value of the cross-correlation coefficient achieved is -0.99 with a zero time delay over a wide range of θp beyond 65° with a poor synchronization dynamic at θp less than 65°. Furthermore, it is observed that the antiphase irregular oscillation of the XP and YP modes changes with θp. VCSEL under the rotating polarization optical feedback can be a good candidate as a chaotic synchronization source for a secure communication system.

  20. Complex-enhanced chaotic signals with time-delay signature suppression based on vertical-cavity surface-emitting lasers subject to chaotic optical injection

    Science.gov (United States)

    Chen, Jianjun; Duan, Yingni; Zhong, Zhuqiang

    2018-03-01

    A chaotic system is constructed on the basis of vertical-cavity surface-emitting lasers (VCSELs), where a slave VCSEL subject to chaotic optical injection (COI) from a master VCSEL with the external feedback. The complex degree (CD) and time-delay signature (TDS) of chaotic signals generated by this chaotic system are investigated numerically via permutation entropy (PE) and self-correlation function (SF) methods, respectively. The results show that, compared with master VCSEL subject to optical feedback, complex-enhanced chaotic signals with TDS suppression can be achieved for S-VCSEL subject to COI. Meanwhile, the influences of several controllable parameters on the evolution maps of CD of chaotic signals are carefully considered. It is shown that the CD of chaotic signals for S-VCSEL is always higher than that for M-VCSEL due to the CIO effect. The TDS of chaotic signals can be significantly suppressed by choosing the reasonable parameters in this system. Furthermore, TDS suppression and high CD chaos can be obtained simultaneously in the specific parameter ranges. The results confirm that this chaotic system may effectively improve the security of a chaos-based communication scheme.

  1. Nonlinear dynamic behaviors of an optically injected vertical-cavity surface-emitting laser

    International Nuclear Information System (INIS)

    Li Xiaofeng; Pan Wei; Luo Bin; Ma Dong; Wang Yong; Li Nuohan

    2006-01-01

    Nonlinear dynamics of a vertical-cavity surface-emitting laser (VCSEL) with external optical injection are studied numerically. We consider a master-slave configuration where the dynamic characteristics of the slave are affected by the optical injection from the master, and we also establish the corresponding Simulink model. The period-doubling route as well as the period-halving route is observed, where the regular, double-periodic, and chaotic pulsings are found. By adjusting the injection strength properly, the laser can be controlled to work at a given state. The effects of frequency detuning on the nonlinear behaviors are also investigated in terms of the bifurcation diagrams of photon density with the frequency detuning. For weak injection case, the nonlinear dynamics shown by the laser are quite different when the value of frequency detuning varies contrarily (positive and negative direction). If the optical injection is strong enough, the slave can be locked by the master even though the frequency detuning is relatively large

  2. High power VCSELs for miniature optical sensors

    Science.gov (United States)

    Geske, Jon; Wang, Chad; MacDougal, Michael; Stahl, Ron; Follman, David; Garrett, Henry; Meyrath, Todd; Snyder, Don; Golden, Eric; Wagener, Jeff; Foley, Jason

    2010-02-01

    Recent advances in Vertical-cavity Surface-emitting Laser (VCSEL) efficiency and packaging have opened up alternative applications for VCSELs that leverage their inherent advantages over light emitting diodes and edge-emitting lasers (EELs), such as low-divergence symmetric emission, wavelength stability, and inherent 2-D array fabrication. Improvements in reproducible highly efficient VCSELs have allowed VCSELs to be considered for high power and high brightness applications. In this talk, Aerius will discuss recent advances with Aerius' VCSELs and application of these VCSELs to miniature optical sensors such as rangefinders and illuminators.

  3. Modeling of circular-grating surface-emitting lasers

    Science.gov (United States)

    Shams-Zadeh-Amiri, Ali M.

    Grating-coupled surface-emitting lasers became an area of growing interest due to their salient features. Emission from a broad area normal to the wafer surface, makes them very well suited in high power applications and two- dimensional laser arrays. These new possibilities have caused an interest in different geometries to fully develop their potential. Among them, circular-grating lasers have the additional advantage of producing a narrow beam with a circular cross section. This special feature makes them ideal for coupling to optical fibers. All existing theoretical models dealing with circular- grating lasers only consider first-order gratings, or second-order gratings, neglecting surface emission. In this thesis, the emphasis is to develop accurate models describing the laser performance by considering the radiation field. Toward this aim, and due to the importance of the radiation modes in surface-emitting structures, a theoretical study of these modes in multilayer planar structures has been done in a rigorous and systematic fashion. Problems like orthogonality of the radiation modes have been treated very accurately. We have considered the inner product of radiation modes using the distribution theory. Orthogonality of degenerate radiation modes is an important issue. We have examined its validity using the transfer matrix method. It has been shown that orthogonality of degenerate radiation modes in a very special case leads to the Brewster theorem. In addition, simple analytical formulas for the normalization of radiation modes have been derived. We have shown that radiation modes can be handled in a much easier way than has been thought before. A closed-form spectral dyadic Green's function formulation of multilayer planar structures has been developed. In this formulation, both rectangular and cylindrical structures can be treated within the same mathematical framework. The Hankel transform of some auxiliary functions defined on a circular aperture has

  4. Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance

    Energy Technology Data Exchange (ETDEWEB)

    Chai, G. M. T. [Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia); Hosea, T. J. C., E-mail: j.hosea@surrey.ac.uk [Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia); Advanced Technology Institute and Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Fox, N. E.; Hild, K.; Ikyo, A. B.; Marko, I. P.; Sweeney, S. J. [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Bachmann, A.; Arafin, S.; Amann, M.-C. [Walter Schottky Institut, Technische Universität Munchen, Am Coulombwall 4, D-85748 Garching (Germany)

    2014-01-07

    We report angle dependent and temperature dependent (9 K–300 K) photo-modulated reflectance (PR) studies on vertical-cavity surface-emitting laser (VCSEL) structures, designed for 2.3 μm mid-infrared gas sensing applications. Changing the temperature allows us to tune the energies of the quantum well (QW) transitions relative to the VCSEL cavity mode (CM) energy. These studies show that this VCSEL structure has a QW-CM offset of 21 meV at room temperature. Consequently the QW ground-state transition comes into resonance with the CM at 220 ± 2 K. The results from these PR studies are closely compared with those obtained in a separate study of actual operating devices and show how the PR technique may be useful for device optimisation without the necessity of having first to process the wafers into working devices.

  5. Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance

    International Nuclear Information System (INIS)

    Chai, G. M. T.; Hosea, T. J. C.; Fox, N. E.; Hild, K.; Ikyo, A. B.; Marko, I. P.; Sweeney, S. J.; Bachmann, A.; Arafin, S.; Amann, M.-C.

    2014-01-01

    We report angle dependent and temperature dependent (9 K–300 K) photo-modulated reflectance (PR) studies on vertical-cavity surface-emitting laser (VCSEL) structures, designed for 2.3 μm mid-infrared gas sensing applications. Changing the temperature allows us to tune the energies of the quantum well (QW) transitions relative to the VCSEL cavity mode (CM) energy. These studies show that this VCSEL structure has a QW-CM offset of 21 meV at room temperature. Consequently the QW ground-state transition comes into resonance with the CM at 220 ± 2 K. The results from these PR studies are closely compared with those obtained in a separate study of actual operating devices and show how the PR technique may be useful for device optimisation without the necessity of having first to process the wafers into working devices

  6. Control of emitted light polarization in a 1310 nm dilute nitride spin-vertical cavity surface emitting laser subject to circularly polarized optical injection

    Energy Technology Data Exchange (ETDEWEB)

    Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Hurtado, A.; Al Seyab, R. K.; Henning, I. D.; Adams, M. J. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Korpijarvi, V.-M.; Guina, M. [Optoelectronics Research Centre (ORC), Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)

    2014-11-03

    We experimentally demonstrate the control of the light polarization emitted by a 1310 nm dilute nitride spin-Vertical Cavity Surface Emitting Laser (VCSEL) at room temperature. This is achieved by means of a combination of polarized optical pumping and polarized optical injection. Without external injection, the polarization of the optical pump controls that of the spin-VCSEL. However, the addition of the externally injected signal polarized with either left- (LCP) or right-circular polarization (RCP) is able to control the polarization of the spin-VCSEL switching it at will to left- or right-circular polarization. A numerical model has been developed showing a very high degree of agreement with the experimental findings.

  7. The vertical-cavity surface-emitting laser incorporating a high contrast grating mirror as a sensing device

    Science.gov (United States)

    Marciniak, Magdalena; Gebski, Marcin; Piskorski, Łukasz; Dems, Maciej; Wasiak, M.; Panajotov, Krassimir; Lott, James A.; Czyszanowski, Tomasz

    2018-02-01

    We propose a novel optical sensing system based on one device that both emits and detects light consisting of a verticalcavity surface-emitting laser (VCSEL) incorporating an high contrast grating (HCG) as a top mirror. Since HCGs can be very sensitive to the optical properties of surrounding media, they can be used to detect gases and liquid. The presence of a gas or a liquid around an HCG mirror causes changes of the power reflectance of the mirror, which corresponds to changes of the VCSEL's cavity quality factor and current-voltage characteristic. By observation of the current-voltage characteristic we can collect information about the medium around the HCG. In this paper we investigate how the properties of the HCG mirror depend on the refractive index of the HCG surroundings. We present results of a computer simulation performed with a three-dimensional fully vectorial model. We consider silicon HCGs on silica and designed for a 1300 nm VCSEL emission wavelength. We demonstrate that our approach can be applied to other wavelengths and material systems.

  8. Upstream vertical cavity surface-emitting lasers for fault monitoring and localization in WDM passive optical networks

    Science.gov (United States)

    Wong, Elaine; Zhao, Xiaoxue; Chang-Hasnain, Connie J.

    2008-04-01

    As wavelength division multiplexed passive optical networks (WDM-PONs) are expected to be first deployed to transport high capacity services to business customers, real-time knowledge of fiber/device faults and the location of such faults will be a necessity to guarantee reliability. Nonetheless, the added benefit of implementing fault monitoring capability should only incur minimal cost associated with upgrades to the network. In this work, we propose and experimentally demonstrate a fault monitoring and localization scheme based on a highly-sensitive and potentially low-cost monitor in conjunction with vertical cavity surface-emitting lasers (VCSELs). The VCSELs are used as upstream transmitters in the WDM-PON. The proposed scheme benefits from the high reflectivity of the top distributed Bragg reflector (DBR) mirror of optical injection-locked (OIL) VCSELs to reflect monitoring channels back to the central office for monitoring. Characterization of the fault monitor demonstrates high sensitivity, low bandwidth requirements, and potentially low output power. The added advantage of the proposed fault monitoring scheme incurs only a 0.5 dB penalty on the upstream transmissions on the existing infrastructure.

  9. Attractor hopping between polarization dynamical states in a vertical-cavity surface-emitting laser subject to parallel optical injection

    Science.gov (United States)

    Denis-le Coarer, Florian; Quirce, Ana; Valle, Angel; Pesquera, Luis; Rodríguez, Miguel A.; Panajotov, Krassimir; Sciamanna, Marc

    2018-03-01

    We present experimental and theoretical results of noise-induced attractor hopping between dynamical states found in a single transverse mode vertical-cavity surface-emitting laser (VCSEL) subject to parallel optical injection. These transitions involve dynamical states with different polarizations of the light emitted by the VCSEL. We report an experimental map identifying, in the injected power-frequency detuning plane, regions where attractor hopping between two, or even three, different states occur. The transition between these behaviors is characterized by using residence time distributions. We find multistability regions that are characterized by heavy-tailed residence time distributions. These distributions are characterized by a -1.83 ±0.17 power law. Between these regions we find coherence enhancement of noise-induced attractor hopping in which transitions between states occur regularly. Simulation results show that frequency detuning variations and spontaneous emission noise play a role in causing switching between attractors. We also find attractor hopping between chaotic states with different polarization properties. In this case, simulation results show that spontaneous emission noise inherent to the VCSEL is enough to induce this hopping.

  10. Recent Advances of VCSEL Photonics

    Science.gov (United States)

    Koyama, Fumio

    2006-12-01

    A vertical-cavity surface emitting laser (VCSEL) was invented 30 years ago. A lot of unique features can be expected, such as low-power consumption, wafer-level testing, small packaging capability, and so on. The market of VCSELs has been growing up rapidly in recent years, and they are now key devices in local area networks using multimode optical fibers. Also, long wavelength VCSELs are currently attracting much interest for use in single-mode fiber metropolitan area and wide area network applications. In addition, a VCSEL-based disruptive technology enables various consumer applications such as a laser mouse and laser printers. In this paper, the recent advance of VCSEL photonics will be reviewed, which include the wavelength extension of single-mode VCSELs and their wavelength integration/control. Also, this paper explores the potential and challenges for new functions of VCSELs toward optical signal processing.

  11. Theory and Modeling of Lasing Modes in Vertical Cavity Surface Emitting Lasers

    Directory of Open Access Journals (Sweden)

    Benjamin Klein

    1998-01-01

    modes that the VCSEL can support are then determined by matching the gain necessary for the optical system in both magnitude and phase to the gain available from the laser's electronic system. Examples are provided.

  12. An efficient approach to characterizing and calculating carrier loss due to heating and barrier height variation in vertical-cavity surface-emitting lasers

    International Nuclear Information System (INIS)

    Jian, Wu; Summers, H. D.

    2010-01-01

    It is important to determine quantitatively the internal carrier loss arising from heating and barrier height variation in a vertical-cavity surface-emitting quantum well laser (VCSEL). However, it is generally difficult to realize this goal using purely theoretical formulas due to difficulty in deriving the parameters relating to the quantum well structure. In this paper, we describe an efficient approach to characterizing and calculating the carrier loss due to the heating and the barrier height change in the VCSEL. In the method, the thermal carrier loss mechanism is combined with gain measurement and calculation. The carrier loss is re-characterized in a calculable form by constructing the threshold current and gain detuning-related loss current using the measured gain data and then substituting them for the quantum well-related parameters in the formula. The result can be expressed as a product of an exponential weight factor linked to the barrier height change and the difference between the threshold current and gain detuning-related loss current. The gain variation at cavity frequency due to thermal carrier loss and gain detuning processes is measured by using an AlInGaAs–AlGaAs VCSEL structure. This work provides a useful approach to analysing threshold and loss properties of the VCSEL, particularly, gain offset design for high temperature operation of VCSELs. (classical areas of phenomenology)

  13. Comparison of Mesa and Device Diameter Variation in Double Wafer-Fused Multi Quantum-Well, Long-Wavelength, Vertical Cavity Surface Emitting Lasers

    International Nuclear Information System (INIS)

    Menon, P.S.; Kandiah, K.; Burhanuddin Yeop Majlis; Shaari, S.

    2011-01-01

    Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) have profound advantages compared to traditional edge-emitting lasers offering improved properties with respect to mode selectivity, fibre coupling, threshold currents and integration into 2D arrays or with other electronic devices. Its commercialization is gaining momentum as the local and access network in optical communication system expand. Numerical modeling of LW-VCSEL utilizing wafer-fused InP-based multi-quantum wells (MQW) and GaAs-based distributed Bragg reflectors (DBRs) is presented in this paper. Emphasis is on the device and mesa/pillar diameter design parameter comparison and its effect on the device characteristics. (author)

  14. Laser self-mixing interferometry in VCSELs - an ultra-compact and massproduceable deflection detection system for nanomechanical polymer cantilever sensors

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Hvam, Jørn Märcher

    2008-01-01

    We have realised an ultra-compact deflection detection system based on laser self-mixing interferometry in a Vertical-Cavity Surface-Emitting Laser (VCSEL). The system can be used together with polymer nanomechanical cantilevers to form chemical sensors capable of detecting less than 1nm deflection....

  15. Direct visualization of the in-plane leakage of high-order transverse modes in vertical-cavity surface-emitting lasers mediated by oxide-aperture engineering

    Science.gov (United States)

    Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Burger, S.; Schmidt, F.; Ledentsov, N. N.

    2016-03-01

    Oxide-confined apertures in vertical cavity surface emitting laser (VCSEL) can be engineered such that they promote leakage of the transverse optical modes from the non- oxidized core region to the selectively oxidized periphery of the device. The reason of the leakage is that the VCSEL modes in the core can be coupled to tilted modes in the periphery if the orthogonality between the core mode and the modes at the periphery is broken by the oxidation-induced optical field redistribution. Three-dimensional modeling of a practical VCSEL design reveals i) significantly stronger leakage losses for high-order transverse modes than that of the fundamental one as high-order modes have a higher field intensity close to the oxide layers and ii) narrow peaks in the far-field profile generated by the leaky component of the optical modes. Experimental 850-nm GaAlAs leaky VCSELs produced in the modeled design demonstrate i) single-mode lasing with the aperture diameters up to 5μm with side mode suppression ratio >20dB at the current density of 10kA/cm2; and ii) narrow peaks tilted at 37 degrees with respect to the vertical axis in excellent agreement with the modeling data and confirming the leaky nature of the modes and the proposed mechanism of mode selection. The results indicate that in- plane coupling of VCSELs, VCSELs and p-i-n photodiodes, VCSEL and delay lines is possible allowing novel photonic integrated circuits. We show that the approach enables design of oxide apertures, air-gap apertures, devices created by impurity-induced intermixing or any combinations of such designs through quantitative evaluation of the leaky emission.

  16. A GaInAsP/InP Vertical Cavity Surface Emitting Laser for 1.5 m m operation

    Science.gov (United States)

    Sceats, R.; Balkan, N.; Adams, M. J.; Masum, J.; Dann, A. J.; Perrin, S. D.; Reid, I.; Reed, J.; Cannard, P.; Fisher, M. A.; Elton, D. J.; Harlow, M. J.

    1999-04-01

    We present the results of our studies concerning the pulsed operation of a bulk GaInAsP/InP vertical cavity surface emitting laser (VCSEL). The device is tailored to emit at around 1.5 m m at room temperature. The structure has a 45 period n-doped GaInAsP/InP bottom distributed Bragg reflector (DBR), and a 4 period Si/Al2O3 dielectric top reflector defining a 3-l cavity. Electroluminescence from a 16 m m diameter top window was measured in the pulsed injection mode. Spectral measurements were recorded in the temperature range between 125K and 240K. Polarisation, lasing threshold current and linewidth measurements were also carried out at the same temperatures. The threshold current density has a broad minimum at temperatures between 170K and 190K, (Jth=13.2 kA/cm2), indicating a good match between the gain and the cavity resonance in this temperature range. Maximum emitted power from the VCSEL is 0.18 mW at 180K.

  17. Integration of electro-absorption modulator in a vertical-cavity surface-emitting laser

    Science.gov (United States)

    Marigo-Lombart, L.; Calvez, S.; Arnoult, A.; Rumeau, A.; Viallon, C.; Thienpont, H.; Panajotov, K.; Almuneau, G.

    2018-02-01

    VCSELs became dominant laser sources in many short optical link applications such as datacenter, active cables, etc. Actual standards and commercialized VCSEL are providing 25 Gb/s data rates, but new solutions are expected to settle the next device generation enabling 100 Gb/s. Directly modulated VCSEL have been extensively studied and improved to reach bandwidths in the range of 26-32 GHz [Chalmers, TU Berlin], however at the price of increased applied current and thus reduced device lifetime. Furthermore, the relaxation oscillation limit still subsists with this solution. Thus, splitting the emission and the modulation functions as done with DFB lasers is a very promising alternative [TI-Tech, TU Berlin]. Here, we study the vertical integration of an ElectroAbsorption Modulator (EAM) within a VCSEL, where the output light of the VCSEL is modulated through the EAM section. In our original design, we finely optimized the EAM design to maximize the modulation depth by implementing perturbative Quantum Confined Stark Effect (QCSE) calculations, while designing the vertical integration of the EAM without penalty on the VCSEL static performances. We will present the different fabricated vertical structures, as well as the experimental electrical and optical static measurements for those configurations demonstrating a very good agreement with the reflectivity and absorption simulations obtained for both the VCSEL and the EAM-VCSEL structures. Finally, to reach very high frequency modulation we studied the BCB electrical properties up to 110 GHz and investigated coplanar and microstrip lines access to decrease both the parasitic capacitance and the influence of the substrate.

  18. Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

    Energy Technology Data Exchange (ETDEWEB)

    Leonard, J. T., E-mail: jtleona01@gmail.com; Yonkee, B. P.; Cohen, D. A.; Megalini, L.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Lee, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2016-01-18

    We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to selectively remove the multi-quantum well (MQW) region outside the aperture area, defined by an opaque metal mask. This PEC aperture (PECA) creates an air-gap in the passive area of the device, allowing one to achieve efficient electrical confinement within the aperture, while simultaneously achieving a large index contrast between core of the device (the MQW within the aperture) and the lateral cladding of the device (the air-gap formed by the PEC etch), leading to strong lateral confinement. Scanning electron microscopy and focused ion-beam analysis is used to investigate the precision of the PEC etch technique in defining the aperture. The fabricated single mode PECA VCSEL shows a threshold current density of ∼22 kA/cm{sup 2} (25 mA), with a peak output power of ∼180 μW, at an emission wavelength of 417 nm. The near-field emission profile shows a clearly defined single linearly polarized (LP) mode profile (LP{sub 12,1}), which is in contrast to the filamentary lasing that is often observed in III-nitride VCSELs. 2D mode profile simulations, carried out using COMSOL, give insight into the different mode profiles that one would expect to be displayed in such a device. The experimentally observed single mode operation is proposed to be predominantly a result of poor current spreading in the device. This non-uniform current spreading results in a higher injected current at the periphery of the aperture, which favors LP modes with high intensities near the edge of the aperture.

  19. GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Lee, SeungGeun; Forman, Charles A.; Lee, Changmin; Kearns, Jared; Young, Erin C.; Leonard, John T.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

    2018-06-01

    We report the first demonstration of III–nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal–organic chemical vapor deposition (MOCVD). For the TJs, n++-GaN was grown on in-situ activated p++-GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of ∼15 mA (10 kA/cm2), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.

  20. Transverse-mode-selectable microlens vertical-cavity surface-emitting laser

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Debernardi, Pierluigi; Lee, Yong Tak

    2010-01-01

    A new vertical-cavity surface-emitting laser structure employing a thin microlens is suggested and numerically investigated. The laser can be made to emit in either a high-power Gaussian-shaped single-fundamental mode or a high-power doughnut-shaped higher-order mode. The physical origin...

  1. A Study of the interaction of radiation and semiconductor lasers: an analysis of transient and permanent effects induced on edge emitting and vertical cavity surface emitting laser diodes

    International Nuclear Information System (INIS)

    Pailharey, Eric

    2000-01-01

    The behavior of laser diodes under transient environment is presented in this work. The first section describes the basic phenomena of radiation interaction with matter. The radiative environments, the main characteristics of laser diodes and the research undertaken on the subject are presented and discussed. The tests on 1300 nm edge emitting laser diode are presented in the second section. The response to a transient ionizing excitation is explored using a 532 nm laser beam. The time of return to steady state after the perturbation is decomposed into several steps: decrease of the optical power during excitation, turn-on delay, relaxation oscillations and optical power offset. Their origins are analyzed using the device structure. To include all the phenomena in a numerical simulation of the device, an individual study of low conductivity materials used for the lateral confinement of the current density is undertaken. The effects of a single particle traversing the optical cavity and an analysis of permanent damages induced by neutrons are also determined. In the last section, 850 nm vertical cavity surface emitting laser diodes (VCSEL) are studied. The behavior of these devices which performances are in constant evolution, is investigated as a function of both temperature and polarization. Then VCSEL are submitted to transient ionizing irradiation and their responses are compared to those of edge emitting diodes. When proton implantation is used in the process, we observe the same behavior for both technologies. VCSEL were submitted to neutron fluence and we have studied the influence of the damages on threshold current, emission patterns and maximum of optical power. (author) [fr

  2. Commercial mode-locked vertical external cavity surface emitting lasers

    Science.gov (United States)

    Head, C. Robin; Paboeuf, David; Ortega, Tiago; Lubeigt, Walter; Bialkowski, Bartlomiej; Lin, Jipeng; Hempler, Nils; Maker, Gareth T.; Malcolm, Graeme P. A.

    2018-02-01

    This paper presents the latest efforts in the development of commercial optically-pumped semiconductor disk lasers (SDLs) at M Squared Lasers. Two types of SDLs are currently being developed: an ultrafast system and a continuous wave single frequency system under the names of Dragonfly and Infinite, respectively. Both offer a compact, low-cost, easy-to-use and maintenance-free tool for a range of growing markets including nonlinear microscopy and quantum technology. To facilitate consumer uptake of the SDL technology, the performance specifications aim to closely match the currently employed systems. An extended Dragonfly system is being developed targeting the nonlinear microscopy market, which typically requires 1-W average power pulse trains with pulse durations below 200 fs. The pulse repetition frequency (PRF) of the commonly used laser systems, typically Titanium-sapphire lasers, is 80 MHz. This property is particularly challenging for mode-locked SDLs which tend to operate at GHz repetition rates, due to their short upper state carrier lifetime. Dragonfly has found a compromise at 200 MHz to balance mode-locking instabilities with a low PRF. In the ongoing development of Dragonfly, additional pulse compression and nonlinear spectral broadening stages are used to obtain pulse durations as short as 130 fs with an average power of 0.85 W, approaching the required performance. A variant of the Infinite system was adapted to provide a laser source suitable for the first stage of Sr atom cooling at 461 nm. Such a source requires average powers of approximately 1 W with a sub-MHz linewidth. As direct emission in the blue is not a viable approach at this stage, an SDL emitting at 922 nm followed by an M Squared Lasers SolTiS ECD-X doubler is currently under development. The SDL oscillator delivered >1 W of single frequency (RMS frequency noise <150kHz) light at 922 nm.

  3. Dilute nitride vertical-cavity surface-emitting lasers

    International Nuclear Information System (INIS)

    Jouhti, T; Okhotnikov, O; Konttinen, J; Gomes, L A; Peng, C S; Karirinne, S; Pavelescu, E-M; Pessa, M

    2003-01-01

    A novel quaternary compound semiconductor material, Ga 1-x In x N y As 1-y (0 0.65 In 0.35 N 0.014 As 0.986 /GaAs quantum wells with special strain-mediating layers. The laser characterization was carried out by using a fibre pigtailed 980 nm pump laser diode, 980/1300 nm wavelength division multiplexer and an optical spectrum analyser. A high optical output power of 3.5 mW was coupled lenslessly into a standard single-mode fibre

  4. Transverse mode selection in vertical-cavity surface-emitting lasers via deep impurity-induced disordering

    Science.gov (United States)

    O'Brien, Thomas R.; Kesler, Benjamin; Dallesasse, John M.

    2017-02-01

    Top emission 850-nm vertical-cavity surface-emitting lasers (VCSELs) demonstrating transverse mode selection via impurity-induced disordering (IID) are presented. The IID apertures are fabricated via closed ampoule zinc diffusion. A simple 1-D plane wave model based on the intermixing of Group III atoms during IID is presented to optimize the mirror loss of higher-order modes as a function of IID strength and depth. In addition, the impact of impurity diffusion into the cap layer of the lasers is shown to improve contact resistance. Further investigation of the mode-dependent characteristics of the device imply an increase in the thermal impedance associated with the fraction of IID contained within the oxide aperture. The optimization of the ratio of the IID aperture to oxide aperture is experimentally determined. Single fundamental mode output of 1.6 mW with 30 dBm side mode suppression ratio is achieved by a 3.0 μm oxide-confined device with an IID aperture of 1.3 μm indicating an optimal IID aperture size of 43% of the oxide aperture.

  5. Swept-source optical coherence tomography powered by a 1.3-μm vertical cavity surface emitting laser enables 2.3-mm-deep brain imaging in mice in vivo

    Science.gov (United States)

    Choi, Woo June; Wang, Ruikang K.

    2015-10-01

    We report noninvasive, in vivo optical imaging deep within a mouse brain by swept-source optical coherence tomography (SS-OCT), enabled by a 1.3-μm vertical cavity surface emitting laser (VCSEL). VCSEL SS-OCT offers a constant signal sensitivity of 105 dB throughout an entire depth of 4.25 mm in air, ensuring an extended usable imaging depth range of more than 2 mm in turbid biological tissue. Using this approach, we show deep brain imaging in mice with an open-skull cranial window preparation, revealing intact mouse brain anatomy from the superficial cerebral cortex to the deep hippocampus. VCSEL SS-OCT would be applicable to small animal studies for the investigation of deep tissue compartments in living brains where diseases such as dementia and tumor can take their toll.

  6. Large-area high-power VCSEL pump arrays optimized for high-energy lasers

    Science.gov (United States)

    Wang, Chad; Geske, Jonathan; Garrett, Henry; Cardellino, Terri; Talantov, Fedor; Berdin, Glen; Millenheft, David; Renner, Daniel; Klemer, Daniel

    2012-06-01

    Practical, large-area, high-power diode pumps for one micron (Nd, Yb) as well as eye-safer wavelengths (Er, Tm, Ho) are critical to the success of any high energy diode pumped solid state laser. Diode efficiency, brightness, availability and cost will determine how realizable a fielded high energy diode pumped solid state laser will be. 2-D Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays are uniquely positioned to meet these requirements because of their unique properties, such as low divergence circular output beams, reduced wavelength drift with temperature, scalability to large 2-D arrays through low-cost and high-volume semiconductor photolithographic processes, high reliability, no catastrophic optical damage failure, and radiation and vacuum operation tolerance. Data will be presented on the status of FLIR-EOC's VCSEL pump arrays. Analysis of the key aspects of electrical, thermal and mechanical design that are critical to the design of a VCSEL pump array to achieve high power efficient array performance will be presented.

  7. Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy

    Science.gov (United States)

    Wistey, Mark Allan

    Fiber optics has revolutionized long distance communication and long haul networks, allowing unimaginable data speeds and noise-free telephone calls around the world for mere pennies per hour at the trunk level. But the high speeds of optical fiber generally do not extend to individual workstations or to the home, in large part because it has been difficult and expensive to produce lasers which emitted light at wavelengths which could take advantage of optical fiber. One of the most promising solutions to this problem is the development of a new class of semiconductors known as dilute nitrides. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows well-established processing techniques. More important, gallium arsenide allows the growth of vertical-cavity surface-emitting lasers (VCSELs), which can be grown in dense, 2D arrays on each wafer, providing tremendous economies of scale for manufacturing, testing, and packaging. Unfortunately, GaInNAs lasers have suffered from what has been dubbed the "nitrogen penalty," with high thresholds and low efficiency as the fraction of nitrogen in the semiconductor was increased. This thesis describes the steps taken to identify and essentially eliminate the nitrogen penalty. Protecting the wafer surface from plasma ignition, using an arsenic cap, greatly improved material quality. Using a Langmuir probe, we further found that the nitrogen plasma source produced a large number of ions which damaged the wafer during growth. The ions were dramatically reduced using deflection plates. Low voltage deflection plates were found to be preferable to high voltages, and simulations showed low voltages to be adequate for ion removal. The long wavelengths from dilute nitrides can be partly explained by wafer damage during growth. As a result of these studies, we demonstrated the first CW, room temperature lasers at wavelengths beyond 1.5mum on gallium arsenide, and the first GaInNAs(Sb) VCSELs beyond 1

  8. 2 W high efficiency PbS mid-infrared surface emitting laser

    Science.gov (United States)

    Ishida, A.; Sugiyama, Y.; Isaji, Y.; Kodama, K.; Takano, Y.; Sakata, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Zogg, H.

    2011-09-01

    High efficiency laser operation with output power exceeding 2 W was obtained for vertical external-cavity PbS based IV-VI compound surface emitting quantum-well structures. The laser showed external quantum efficiency as high as 16%. Generally, mid-infrared III-V or II-VI semiconductor laser operation utilizing interband electron transitions are restricted by Auger recombination and free carrier absorption. Auger recombination is much lower in the IV-VI semiconductors, and the free-carrier absorption is significantly reduced by an optically pumped laser structure including multi-step optical excitation layers.

  9. Spectral-Modulation Characteristics of Vertical-Cavity Surface-Emitting Lasers

    Science.gov (United States)

    Vas'kovskaya, M. I.; Vasil'ev, V. V.; Zibrov, S. A.; Yakovlev, V. P.; Velichanskii, V. L.

    2018-01-01

    The requirements imposed on vertical-cavity surface-emitting lasers in a number of metrological problems in which optical pumping of alkali atoms is used are considered. For lasers produced by different manufacturers, these requirements are compared with the experimentally observed spectral characteristics at a constant pump current and in the microwave modulation mode. It is shown that a comparatively small number of lasers in the microwave modulation mode make it possible to obtain the spectrum required for atomic clocks based on the coherent population-trapping effect.

  10. Self-mixing interferometry in vertical-cavity surface-emitting lasers for nanomechanical cantilever sensing

    Science.gov (United States)

    Larsson, David; Greve, Anders; Hvam, Jørn M.; Boisen, Anja; Yvind, Kresten

    2009-03-01

    We have experimentally investigated self-mixing interference produced by the feedback of light from a polymer micrometer-sized cantilever into a vertical-cavity surface-emitting laser for sensing applications. In particular we have investigated how the visibility of the optical output power and the junction voltage depends on the laser injection current and the distance to the cantilever. The highest power visibility obtained from cantilevers without reflective coatings was ˜60%, resulting in a very high sensitivity of 45 mV/nm with a noise floor below 1.2 mV. Different detection schemes are discussed.

  11. Self-mixing interferometry in vertical-cavity surface-emitting lasers for nanomechanical cantilever sensing

    DEFF Research Database (Denmark)

    Larsson, David; Greve, Anders; Hvam, Jørn Märcher

    2009-01-01

    We have experimentally investigated self-mixing interference produced by the feedback of light from a polymer micrometer-sized cantilever into a vertical-cavity surface-emitting laser for sensing applications. In particular we have investigated how the visibility of the optical output power...... and the junction voltage depends on the laser injection current and the distance to the cantilever. The highest power visibility obtained from cantilevers without reflective coatings was 60%, resulting in a very high sensitivity of 45 mV/nm with a noise floor below 1.2 mV. Different detection schemes are discussed....

  12. InAs quantum wires on InP substrate for VCSEL applications

    OpenAIRE

    Lamy , Jean-Michel; Paranthoën , Cyril; Levallois , Christophe; Nakkar , Abdulhadi; Folliot , Hervé; Dehaese , Olivier; Le Corre , Alain; Loualiche , Slimane; Castany , Olivier; Dupont , Laurent

    2008-01-01

    International audience; Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 µm photoluminescence along the [1-10] crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL lase...

  13. Design and Fabrication of 850 and 980 nm Vertical Cavity Surface Emitting Laser

    National Research Council Canada - National Science Library

    Das, N

    2004-01-01

    .... VCSELs on GaAs substrates were grown by the molecular beam epitaxy technique. In this report we present detailed procedures to design and fabricate 850-nm top-emitting and 980-nm bottom-emitting VCSELs...

  14. Continuous wave vertical cavity surface emitting lasers at 2.5 μm with InP-based type-II quantum wells

    International Nuclear Information System (INIS)

    Sprengel, S.; Andrejew, A.; Federer, F.; Veerabathran, G. K.; Boehm, G.; Amann, M.-C.

    2015-01-01

    A concept for electrically pumped vertical cavity surface emitting lasers (VCSEL) for emission wavelength beyond 2 μm is presented. This concept integrates type-II quantum wells into InP-based VCSELs with a buried tunnel junction as current aperture. The W-shaped quantum wells are based on the type-II band alignment between GaInAs and GaAsSb. The structure includes an epitaxial GaInAs/InP and an amorphous AlF 3 /ZnS distributed Bragg reflector as bottom and top (outcoupling) mirror, respectively. Continuous-wave operation up to 10 °C at a wavelength of 2.49 μm and a peak output power of 400 μW at −18 °C has been achieved. Single-mode emission with a side-mode suppression ratio of 30 dB for mesa diameters up to 14 μm is presented. The long emission wavelength and current tunability over a wavelength range of more than 5 nm combined with its single-mode operation makes this device ideally suited for spectroscopy applications

  15. Compact electro-absorption modulator integrated with vertical-cavity surface-emitting laser for highly efficient millimeter-wave modulation

    International Nuclear Information System (INIS)

    Dalir, Hamed; Ahmed, Moustafa; Bakry, Ahmed; Koyama, Fumio

    2014-01-01

    We demonstrate a compact electro-absorption slow-light modulator laterally-integrated with an 850 nm vertical-cavity surface-emitting laser (VCSEL), which enables highly efficient millimeter-wave modulation. We found a strong leaky travelling wave in the lateral direction between the two cavities via widening the waveguide width with a taper shape. The small signal response of the fabricated device shows a large enhancement of over 55 dB in the modulation amplitude at frequencies beyond 35 GHz; thanks to the photon-photon resonance. A large group index of over 150 in a Bragg reflector waveguide enables the resonance at millimeter wave frequencies for 25 μm long compact modulator. Based on the modeling, we expect a resonant modulation at a higher frequency of 70 GHz. The resonant modulation in a compact slow-light modulator plays a significant key role for high efficient narrow-band modulation in the millimeter wave range far beyond the intrinsic modulation bandwidth of VCSELs.

  16. Characteristics of VCSELs and VCSEL arrays for optical data links

    Science.gov (United States)

    Gaw, Craig A.; Jiang, Wenbin; Lebby, Michael S.; Kiely, Philip A.; Claisse, Paul R.

    1997-05-01

    High performance, low cost, and highly reliable vertical cavity surface emitting lasers (VCSELs) have been developed and are currently being used in both parallel and serial optical interconnect applications. For example, Motorola's OPTOBUSTM parallel optical interconnect relies heavily on the unique characteristics of arrays of GaAs based VCSELs emitting at 850 nm to achieve its stringent performance goals at low cost. Representative parametric results of discrete VCSELs and VCSEL arrays will be compared, including `optical power output-current' and `current-voltage' curves, optical wall plug efficiencies, and modulation characteristics. The use of statistical parameter analysis across a wafer and subsequent parametric wafer maps has proven to be a valuable tool for maintaining control of the fabrication process. The consistency of VCSEL parameters across individual VCSEL arrays will be discussed. VCSELs are very robust devices. Life times at room ambient in excess of 3E6 hours have been reported by several groups. Degradation behavior of selected device parameters will be discussed. Failure analysis demonstrating the effect of proton implant depth on reliability will be presented. ESD damage at forward bias is shown to be process related, while ESD damage at reverse bias is shown to be material related. These VCSELs are ESD Class 1 devices.

  17. VCSEL Scaling, Laser Integration on Silicon, and Bit Energy

    Science.gov (United States)

    2017-03-01

    especially the laser. Highly compact directly modulated lasers ( DMLs ) have been researched to meet this goal. The most favored technology will likely be...question of which achieves lower bit energy, a DML or a continuous-wave (CW) laser coupled to an integrated modulator. Transceiver suppliers are also...development that can utilize high efficiency DMLs that reach very high modulation speed. Oxide-VCSELs [1] do not yet take full advantage of the

  18. All-VCSEL Transmitters With Remote Optical Injection for WDM-OFDM-PON

    DEFF Research Database (Denmark)

    Deng, Lei; Zhao, Ying; Pang, Xiaodan

    2014-01-01

    We report on a novel scheme that uses vertical cavity surface emitting lasers (VCSELs) and remote optical injection technique in the hybrid wavelength division multiplexing orthogonal frequency division multiplexing (OFDM) passive optical network. In the proposed scheme, 1.55-$\\mu{\\rm m}$ VCSELs ...

  19. Enhancement of slope efficiency and output power in GaN-based vertical-cavity surface-emitting lasers with a SiO2-buried lateral index guide

    Science.gov (United States)

    Kuramoto, Masaru; Kobayashi, Seiichiro; Akagi, Takanobu; Tazawa, Komei; Tanaka, Kazufumi; Saito, Tatsuma; Takeuchi, Tetsuya

    2018-03-01

    We have achieved a high output power of 6 mW from a 441 nm GaN-based vertical-cavity surface-emitting laser (VCSEL) under continuous wave (CW) operation, by reducing both the internal loss and the reflectivity of the front cavity mirror. A preliminary analysis of the internal loss revealed an enormously high transverse radiation loss in a conventional GaN-based VCSEL without lateral optical confinement (LOC). Introducing an LOC structure enhanced the slope efficiency by a factor of 4.7, with a further improvement to a factor of 6.7 upon reducing the front mirror reflectivity. The result was a slope efficiency of 0.87 W/A and an external differential quantum efficiency of 32% under pulsed operation. A flip-chip-bonded VCSEL also exhibited a high slope efficiency of 0.64 W/A and an external differential quantum efficiency of 23% for the front-side output under CW operation. The reflectivity of the cavity mirror was adjusted by varying the number of AlInN/GaN distributed Bragg reflector pairs from 46 to 42, corresponding to reflectivity values from 99.8% to 99.5%. These results demonstrate that a combination of internal loss reduction and cavity mirror control is a very effective way of obtaining a high output GaN-based VCSEL.

  20. 850-nm Zn-diffusion vertical-cavity surface-emitting lasers with with oxide-relief structure for high-speed and energy-efficient optical interconnects from very-short to medium (2km) reaches

    Science.gov (United States)

    Shi, Jin-Wei; Wei, Chia-Chien; Chen, Jason (Jyehong); Yang, Ying-Jay

    2015-03-01

    High-speed and "green" ~850 nm vertical-cavity surface-emitting lasers (VCSELs) have lately attracted lots of attention due to their suitability for applications in optical interconnects (OIs). To further enhance the speed and its maximum allowable linking distance of VCSELs are two major trends to meet the requirement of OI in next generation data centers. Recently, by use of the advanced 850 nm VCSEL technique, data rate as high as 64 Gbit/sec over 57m and 20 Gbit/sec over 2km MMF transmission have been demonstrated, respectively. Here, we will review our recent work about 850 nm Zn-diffusion VCSELs with oxide-relief apertures to further enhance the above-mentioned performances. By using Zn-diffusion, we can not only reduce the device resistance but also manipulate the number of optical modes to benefit transmission. Combing such device, which has excellent single-mode (SMSR >30 dB) and high-power (~7mW) performance, with advanced modulation format (OFDM), record-high bit-rate-distance-product through MMF (2.3 km×28 Gbit/sec) has been demonstrated. Furthermore, by selective etching away the oxide aperture inside Zn-diffusion VCSEL, significant enhancement of device speed, D-factor, and reliability can be observed. With such unique VCSEL structure, >40 Gbit/sec energy-efficient transmission over 100m MMF under extremely low-driving current density (<10kA/cm2) has been successfully demonstrated.

  1. Continuously tunable monomode mid-infrared vertical external cavity surface emitting laser on Si

    Science.gov (United States)

    Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Hobrecker, F.; Zogg, H.

    2010-10-01

    A tunable PbTe based mid-infrared vertical external cavity surface emitting laser is described. The active part is a ˜1 μm thick PbTe layer grown epitaxially on a Bragg mirror on the Si-substrate. The cavity is terminated with a curved Si/SiO Bragg top mirror and pumped optically with a 1.55 μm laser. Cavity length is <100 μm in order that only one longitudinal mode is supported. By changing the cavity length, up to 5% wavelength continuous and mode-hop free tuning is achieved at fixed temperature. The total tuning extends from 5.6 to 4.7 μm at 100-170 K operation temperature.

  2. Modal loss mechanism of micro-structured VCSELs studied using full vector FDTD method.

    Science.gov (United States)

    Jo, Du-Ho; Vu, Ngoc Hai; Kim, Jin-Tae; Hwang, In-Kag

    2011-09-12

    Modal properties of vertical cavity surface-emitting lasers (VCSELs) with holey structures are studied using a finite difference time domain (FDTD) method. We investigate loss behavior with respect to the variation of structural parameters, and explain the loss mechanism of VCSELs. We also propose an effective method to estimate the modal loss based on mode profiles obtained using FDTD simulation. Our results could provide an important guideline for optimization of the microstructures of high-power single-mode VCSELs.

  3. Optoelectronic integrated circuits utilising vertical-cavity surface-emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Zakharov, S D; Fyodorov, V B; Tsvetkov, V V

    1999-01-01

    Optoelectronic integrated circuits with additional optical inputs/outputs, in which vertical-cavity surface-emitting (VCSE) lasers perform the data transfer functions, are considered. The mutual relationship and the 'affinity' between optical means for data transfer and processing, on the one hand, and the traditional electronic component base, on the other, are demonstrated in the case of implementation of three-dimensional interconnects with a high transmission capacity. Attention is drawn to the problems encountered when semiconductor injection lasers are used in communication lines. It is shown what role can be played by VCSE lasers in solving these problems. A detailed analysis is made of the topics relating to possible structural and technological solutions in the fabrication of single lasers and of their arrays, and also of the problems hindering integrating of lasers into emitter arrays. Considerable attention is given to integrated circuits with optoelectronic smart pixels. Various technological methods for vertical integration of GaAs VCSE lasers with the silicon substrate of a microcircuit (chip) are discussed. (review)

  4. Photodegradation and polarization properties of vertical external surface-emitting organic laser

    International Nuclear Information System (INIS)

    Leang, Tatiana

    2014-01-01

    Although organic solid-state dye lasers can provide wavelength tunability in the whole visible spectrum and offers perspectives of low-cost compact lasers, they are still limited by several drawbacks, especially photodegradation. The geometry of a Vertical External Cavity Surface-emitting Organic Laser (VECSOL) enables organic lasers to reach high energies, excellent conversion efficiencies and good beam quality, it also enables an external control on many parameters, a feature that we have used here to study the photodegradation phenomenon as well as some polarization properties of organic solid-state lasers. In the first part of this thesis, we studied the lifetime of the laser upon varying several parameters (pump pulse-width, repetition rate, output coupling,...) and we found that the intracavity laser intensity, independently of the pump intensity, had a major on photodegradation rate. Moreover, we observed that the profile of the laser beam was also degrading with time: while it is Gaussian in the beginning it gradually shifts to an annular shape. In the second part, we investigated the polarization properties of VECSOLs, with a special emphasis on fluorescence properties of some typical dyes used in lasers. The crucial role played by resonant non-radiative energy transfers between dye molecules (HOMO-FRET) is evidenced and enables explaining the observed fluorescence depolarization, compared to the expected limiting fluorescence anisotropy. Energy transfers happen to play a negligible role above laser threshold, as the organic laser beam is shown to be linearly polarized in a wide range of experimental conditions when excitation occurs in the first singlet state. (author) [fr

  5. Reactive ion beam etching for microcavity surface emitting laser fabrication: technology and damage characterization

    International Nuclear Information System (INIS)

    Matsutani, A.; Tadokoro, T.; Koyama, F.; Iga, K.

    1993-01-01

    Reactive ion beam etching (RIBE) is an effective dry etching technique for the fabrication of micro-sized surface emitting (SE) lasers and optoelectronic devices. In this chapter, some etching characteristics for GaAs, InP and GaInAsP with a Cl 2 gas using an RIBE system are discussed. Micro-sized circular mesas including GaInAsP/InP multilayers with vertical sidewalls were fabricated. RIBE-induced damage in InP substrates was estimated by C-V and PL measurement. In addition, the removal of the induced damage by the second RIBE with different conditions for the InP wafer was proposed. The sidewall damage is characterized by photoluminescence emitted from the etched sidewall of a GaInAsP/InP DH wafer. (orig.)

  6. Design of photonic crystal surface emitting lasers with indium-tin-oxide top claddings

    Science.gov (United States)

    Huang, Shen-Che; Hong, Kuo-Bin; Chiu, Han-Lun; Lan, Shao-Wun; Chang, Tsu-Chi; Li, Heng; Lu, Tien-Chang

    2018-02-01

    Electrically pumped GaAs-based photonic crystal surface emitting lasers were fabricated using a simple fabrication process by directly capping the indium-tin-oxide transparent conducting thin film as the top cladding layer upon a photonic crystal layer. Optimization of the separate-confinement heterostructures of a laser structure is crucial to improving characteristics by providing advantageous optical confinements. The turn-on voltage, series resistance, threshold current, and slope efficiency of the laser with a 100 × 100 μm2 photonic crystal area operated at room temperature were 1.3 V, 1.5 Ω, 121 mA, and 0.2 W/A, respectively. Furthermore, we demonstrated a single-lobed lasing wavelength of 928.6 nm at 200 mA and a wavelength redshift rate of 0.05 nm/K in temperature-dependent measurements. The device exhibited the maximum output power of approximately 400 mW at an injection current of 2 A; moreover, divergence angles of less than 1° for the unpolarized circular-shaped laser beam were measured at various injection currents. Overall, the low threshold current, excellent beam quality, small divergence, high output power, and high-operating-temperature (up to 343 K) of our devices indicate that they can potentially fill the requirements for next-generation light sources and optoelectronic devices.

  7. Real-time multi-target ranging based on chaotic polarization laser radars in the drive-response VCSELs.

    Science.gov (United States)

    Zhong, Dongzhou; Xu, Geliang; Luo, Wei; Xiao, Zhenzhen

    2017-09-04

    According to the principle of complete chaos synchronization and the theory of Hilbert phase transformation, we propose a novel real-time multi-target ranging scheme by using chaotic polarization laser radar in the drive-response vertical-cavity surface-emitting lasers (VCSELs). In the scheme, to ensure each polarization component (PC) of the master VCSEL (MVCSEL) to be synchronized steadily with that of the slave VCSEL, the output x-PC and y-PC from the MVCSEL in the drive system and those in the response system are modulated by the linear electro-optic effect simultaneously. Under this condition, by simulating the influences of some key parameters of the system on the synchronization quality and the relative errors of the two-target ranging, related operating parameters can be optimized. The x-PC and the y-PC, as two chaotic radar sources, are used to implement the real-time ranging for two targets. It is found that the measured distances of the two targets at arbitrary position exhibit strong real-time stability and only slight jitter. Their resolutions are up to millimeters, and their relative errors are very small and less than 2.7%.

  8. Vertical-Cavity Surface-Emitting Lasers: Advanced Modulation Formats and Coherent Detection

    DEFF Research Database (Denmark)

    Rodes Lopez, Roberto

    transmission link with real-time demodulation. Furthermore, advanced modulation formats are considered in this thesis to expand the state-of-the-art in high-speed short-range data transmission system based on VCSELs. First, directly modulation of a VCSEL with a 4-level pulse amplitude modulation (PAM-4) signal...... at 50 Gb/s is achieved. This is the highest data rate ever transmitted with a single VCSEL at the time of this thesis work. The capacity of this system is increased to 100 Gb/s by using polarization multiplexing emulation and forward error correction techniques. Compared to a non return-to-zero on-off...

  9. Advanced vectorial simulation of VCSELs with nano structures invited paper

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2009-01-01

    The single-mode properties and design issues of three vertical-cavity surface-emitting laser (VCSEL) structures incorporating nano structures are rigorously investigated. Nano structuring enables to deliver selective pumping or loss to the fundamental mode as well as stabilizing the output...... polarization state. Comparison of three vectorial simulation methods reveals that the modal expansion method is suitable for treating the nano structured VCSEL designs....

  10. Surface-Emitting Distributed Feedback Terahertz Quantum-Cascade Lasers in Metal-Metal Waveguides

    Science.gov (United States)

    Kumar, Sushil; Williams, Benjamin S.; Qin, Qi; Lee, Alan W. M.; Hu, Qing; Reno, John L.

    2007-01-01

    Single-mode surface-emitting distributed feedback terahertz quantumcascade lasers operating around 2.9 THz are developed in metal-metal waveguides. A combination of techniques including precise control of phase of reflection at the facets, and u e of metal on the sidewalls to eliminate higher-order lateral modes allow robust single-mode operation over a range of approximately 0.35 THz. Single-lobed far-field radiation pattern is obtained using a pi phase-shift in center of the second-order Bragg grating. A grating device operating at 2.93 THz lased up to 149 K in pulsed mode and a temperature tuning of 19 .7 GHz was observed from 5 K to 147 K. The same device lased up to 78 K in continuous-wave (cw) mode emitting more than 6 m W of cw power at 5 K. ln general, maximum temperature of pulsed operation for grating devices was within a few Kelvin of that of multi-mode Fabry-Perot ridge lasers

  11. 5-μm vertical external-cavity surface-emitting laser (VECSEL) for spectroscopic applications

    Science.gov (United States)

    Rahim, M.; Khiar, A.; Felder, F.; Fill, M.; Zogg, H.; Sigrist, M. W.

    2010-08-01

    Mid-IR tunable VECSELs (Vertical External-Cavity Surface-Emitting Lasers) emitting at 4-7 μm wavelengths and suitable for spectroscopic sensing applications are described. They are realized with lead-chalcogenide (IV-VI) narrow band gap materials. The active part, a single 0.6-2-μm thick PbTe or PbSe gain layer, is grown onto an epitaxial Bragg mirror consisting of two or three Pb1- y Eu y Te/BaF2 quarter-wavelength layer pairs. All layers are deposited by MBE in a single run employing a BaF2 or Si substrate, no further processing is needed. The cavity is completed with an external curved top mirror, which is again realized with an epitaxial Bragg structure. Pumping is performed optically with a 1.5-μm laser. Maximum output power for pulsed operation is currently up to >1 Wp at -173°C and >10 mW at 10°C. In continuous wave (CW) operation, 18 mW at 100 K are reached. Still higher operating temperatures and/or powers are expected with better heat-removal structures and better designs employing QW (Quantum-Wells). Advantages of mid-IR VECSELs compared to edge-emitting lasers are their very good beam quality (circular beam with 15 μm are accessible with Pb1- y X y Z (X=Sr, Eu, Sn, Z=Se, Te) and/or including QW.

  12. High-speed VCSEL-based optical interconnects

    Science.gov (United States)

    Ishak, Waguih S.

    2001-11-01

    Vertical Cavity Surface Emitting Lasers (VCSEL) have made significant inroads into commercial realization especially in the area of data communications. Single VCSEL devices are key components in Gb Ethernet Transceivers. A multi-element VCSEL array is the key enabling technology for high-speed multi Gb/s parallel optical interconnect modules. In 1996, several companies introduced a new generation of fiber optic products based VCSEL technology such as multimode fiber transceivers for the ANSI Fiber Channel and Gigabit Ethernet IEEE 802.3 standards. VCSELs offer unique advantages over its edge-emitting counterparts in several areas. These include low-cost (LED-like) manufacturability, low current operation and array integrability. As data rates continue to increase, VCSELs offer the advantage of being able to provide the highest modulation bandwidth per milliamp of modulation current. Currently, most of the VCSEL-based products use short (780 - 980 nm) wavelength lasers. However, significant research efforts are taking place at universities and industrial research labs around the world to develop reliable, manufacturable and high-power long (1300 - 1550 nm) wavelength VCSELs. These lasers will allow longer (several km) transmission distances and will help alleviate some of the eye-safety issues. Perhaps, the most important advantage of VCSELs is the ability to form two-dimensional arrays much easier than in the case of edge-emitting lasers. These arrays (single and two-dimensional) will allow a whole new family of applications, specifically in very high-speed computer and switch interconnects.

  13. 1060-nm Tunable Monolithic High Index Contrast Subwavelength Grating VCSEL

    DEFF Research Database (Denmark)

    Ansbæk, Thor; Chung, Il-Sug; Semenova, Elizaveta

    2013-01-01

    We present the first tunable vertical-cavity surface-emitting laser (VCSEL) where the top distributed Bragg reflector has been completely substituted by an air-cladded high-index-contrast subwavelength grating (HCG) mirror. In this way, an extended cavity design can be realized by reducing...

  14. Optimization of VCSELs for Self-Mixing Sensing

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Chung, Il-Sug

    2010-01-01

    We have simulated the variations in optical output power from a vertical-cavity surface-emitting laser (VCSEL) subject to self-mixing feedback, which is very important for applications in sensing. In order to maximize the self-mixing signal for a given feedback we have optimized the epitaxial...

  15. Commercialized VCSEL components fabricated at TrueLight Corporation

    Science.gov (United States)

    Pan, Jin-Shan; Lin, Yung-Sen; Li, Chao-Fang A.; Chang, C. H.; Wu, Jack; Lee, Bor-Lin; Chuang, Y. H.; Tu, S. L.; Wu, Calvin; Huang, Kai-Feng

    2001-05-01

    TrueLight Corporation was found in 1997 and it is the pioneer of VCSEL components supplier in Taiwan. We specialize in the production and distribution of VCSEL (Vertical Cavity Surface Emitting Laser) and other high-speed PIN-detector devices and components. Our core technology is developed to meet blooming demand of fiber optic transmission. Our intention is to diverse the device application into data communication, telecommunication and industrial markets. One mission is to provide the high performance, highly reliable and low-cost VCSEL components for data communication and sensing applications. For the past three years, TrueLight Corporation has entered successfully into the Gigabit Ethernet and the Fiber Channel data communication area. In this paper, we will focus on the fabrication of VCSEL components. We will present you the evolution of implanted and oxide-confined VCSEL process, device characterization, also performance in Gigabit data communication and the most important reliability issue

  16. High-power VCSELs for smart munitions

    Science.gov (United States)

    Geske, Jon; MacDougal, Michael; Cole, Garrett; Snyder, Donald

    2006-08-01

    The next generation of low-cost smart munitions will be capable of autonomously detecting and identifying targets aided partly by the ability to image targets with compact and robust scanning rangefinder and LADAR capabilities. These imaging systems will utilize arrays of high performance, low-cost semiconductor diode lasers capable of achieving high peak powers in pulses ranging from 5 to 25 nanoseconds in duration. Aerius Photonics is developing high-power Vertical-Cavity Surface-Emitting Lasers (VCSELs) to meet the needs of these smart munitions applications. The authors will report the results of Aerius' development program in which peak pulsed powers exceeding 60 Watts were demonstrated from single VCSEL emitters. These compact packaged emitters achieved pulse energies in excess of 1.5 micro-joules with multi kilo-hertz pulse repetition frequencies. The progress of the ongoing effort toward extending this performance to arrays of VCSEL emitters and toward further improving laser slope efficiency will be reported.

  17. Few-mode vertical-cavity surface-emitting laser: Optional emission of transverse modes with different polarizations

    Science.gov (United States)

    Zhong, Chuyu; Zhang, Xing; Hofmann, Werner; Yu, Lijuan; Liu, Jianguo; Ning, Yongqiang; Wang, Lijun

    2018-05-01

    Few-mode vertical-cavity surface-emitting lasers that can be controlled to emit certain modes and polarization states simply by changing the biased contacts are proposed and fabricated. By directly etching trenches in the p-doped distributed Bragg reflector, the upper mesa is separated into several submesas above the oxide layer. Individual contacts are then deposited. Each contact is used to control certain transverse modes with different polarization directions emitted from the corresponding submesa. These new devices can be seen as a prototype of compact laser sources in mode division multiplexing communications systems.

  18. Highly Selective Volatile Organic Compounds Breath Analysis Using a Broadly-Tunable Vertical-External-Cavity Surface-Emitting Laser.

    Science.gov (United States)

    Tuzson, Béla; Jágerská, Jana; Looser, Herbert; Graf, Manuel; Felder, Ferdinand; Fill, Matthias; Tappy, Luc; Emmenegger, Lukas

    2017-06-20

    A broadly tunable mid-infrared vertical-external-cavity surface-emitting laser (VECSEL) is employed in a direct absorption laser spectroscopic setup to measure breath acetone. The large wavelength coverage of more than 30 cm -1 at 3.38 μm allows, in addition to acetone, the simultaneous measurement of isoprene, ethanol, methanol, methane, and water. Despite the severe spectral interferences from water and alcohols, an unambiguous determination of acetone is demonstrated with a precision of 13 ppbv that is achieved after 5 min averaging at typical breath mean acetone levels in synthetic gas samples mimicking human breath.

  19. 4.5 μm wavelength vertical external cavity surface emitting laser operating above room temperature

    Science.gov (United States)

    Rahim, M.; Khiar, A.; Felder, F.; Fill, M.; Zogg, H.

    2009-05-01

    A midinfrared vertical external cavity surface emitting laser with 4.5 μm emission wavelength and operating above room temperature has been realized. The active part consists of a single 850 nm thick epitaxial PbSe gain layer. It is followed by a 2 1/2 pair Pb1-yEuyTe/BaF2 Bragg mirror. No microstructural processing is needed. Excitation is done optically with a 1.5 μm wavelength laser. The device operates up to 45 °C with 100 ns pulses and delivers 6 mW output power at 27 °C heat-sink temperature.

  20. MBE growth of VCSELs for high volume applications

    Science.gov (United States)

    Jäger, Roland; Riedl, Michael C.

    2011-05-01

    Mass market applications like laser computer mouse or optical data transmission based on vertical-cavity surface-emitting laser (VCSEL) chips need a high over all yield including epitaxy, processing, dicing, mounting and testing. One yield limitation for VCSEL structures is the emission wavelength variation of the substrate surface area leading to the fraction on laser chips which are below or above the specification limits. For most 850 nm VCSEL products a resonator wavelength variation of ±2 nm is common. This represents an average resonator thickness variation of much less than 1% which is quite challenging to be fulfilled on the entire processed wafer surface area. A high over all yield is demonstrated on MBE grown VCSEL structures.

  1. Real time algorithm temperature compensation in tunable laser / VCSEL based WDM-PON system

    DEFF Research Database (Denmark)

    Iglesias Olmedo, Miguel; Rodes Lopez, Roberto; Pham, Tien Thang

    2012-01-01

    We report on a real time experimental validation of a centralized algorithm for temperature compensation of tunable laser/VCSEL at ONU and OLT, respectively. Locking to a chosen WDM channel is shown for temperature changes over 40°C.......We report on a real time experimental validation of a centralized algorithm for temperature compensation of tunable laser/VCSEL at ONU and OLT, respectively. Locking to a chosen WDM channel is shown for temperature changes over 40°C....

  2. High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

    Science.gov (United States)

    Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.

    2018-01-01

    The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

  3. Single-mode 850-nm vertical-cavity surface-emitting lasers with Zn-diffusion and oxide-relief apertures for > 50 Gbit/sec OOK and 4-PAM transmission

    Science.gov (United States)

    Shi, Jin-Wei; Wei, Chia-Chien; Chen, Jyehong; Ledentsov, N. N.; Yang, Ying-Jay

    2017-02-01

    Vertical-cavity surface-emitting lasers (VCSELs) has become the most important light source in the booming market of short-reach (targeted at 56 Gbit/sec data rate per channel (CEI-56G) with the total data rate up to 400 Gbit/sec. However, the serious modal dispersion of multi-mode fiber (MMF), limited speed of VCSEL, and its high resistance (> 150 Ω) seriously limits the >50 Gbit/sec linking distance (50 Gbit/sec transmission due to that it can save one-half of the required bandwidth. Nevertheless, a 4.7 dB optical power penalty and the linearity of transmitter would become issues in the 4-PAM linking performance. Besides, in the modern OI system, the optics transreceiver module must be packaged as close as possible with the integrated circuits (ICs). The heat generated from ICs will become an issue in speed of VSCEL. Here, we review our recent work about 850 nm VCSEL, which has unique Zn-diffusion/oxide-relief apertures and special p- doping active layer with strong wavelength detuning to further enhance its modulation speed and high-temperature (85°C) performances. Single-mode (SM) devices with high-speed ( 26 GHz), reasonable resistance ( 70 Ω) and moderate output power ( 1.5 mW) can be achieved. Error-free 54 Gbit/sec OOK transmission through 1km MMF has been realized by using such SM device with signal processing techniques. Besides, the volterra nonlinear equalizer has been applied in our 4-PAM 64 Gbit/sec transmission through 2-km OM4 MMF, which significantly enhance the linearity of device and outperforms fed forward equalization (FFE) technique. Record high bit-rate distance product of 128.km is confirmed for optical-interconnect applications.

  4. Fast pulsing dynamics of a vertical-cavity surface-emitting laser operating in the low-frequency fluctuation regime

    International Nuclear Information System (INIS)

    Sciamanna, M.; Rogister, F.; Megret, P.; Blondel, M.; Masoller, C.; Abraham, N. B.

    2003-01-01

    We analyze the dynamics of a vertical-cavity surface-emitting laser with optical feedback operating in the low-frequency fluctuation regime. By focusing on the fast pulsing dynamics, we show that the two linearly polarized modes of the laser exhibit two qualitatively different behaviors: they emit pulses in phase just after a power dropout and they emit pulses out of phase after the recovery process of the output power. As a consequence, two distinct statistical distributions of the fast pulsating total intensity are observed, either monotonically decaying from the noise level or peaked around the mean intensity value. We further show that gain self-saturation of the lasing transition strongly modifies the shape of the intensity distribution

  5. Modular PbSrS/PbS mid-infrared vertical external cavity surface emitting laser on Si

    Science.gov (United States)

    Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Zogg, H.; Cao, D.; Kobayashi, S.; Yokoyama, T.; Ishida, A.

    2011-07-01

    A mid-infrared vertical external cavity surface emitting laser (VECSEL) based on undoped PbS is described herein. A 200 nm-thick PbS active layer embedded between PbSrS cladding layers forms a double heterostructure. The layers are grown on a lattice and thermal expansion mismatched Si-substrate. The substrate is placed onto a flat bottom Bragg mirror again grown on a Si substrate, and the VECSEL is completed with a curved top mirror. Pumping is done optically with a 1.55 μm laser diode. This leads to an extremely simple modular fabrication process. Lasing wavelengths range from 3-3.8 μm at 100-260 K heat sink temperature. The lowest threshold power is ˜210 mWp and highest output power is ˜250 mWp. The influence of the different recombination mechanism as well as free carrier absorption on the threshold power is modeled.

  6. Final report on LDRD project : narrow-linewidth VCSELs for atomic microsystems.

    Energy Technology Data Exchange (ETDEWEB)

    Chow, Weng Wah; Geib, Kent Martin; Peake, Gregory Merwin; Serkland, Darwin Keith

    2011-09-01

    Vertical-cavity surface-emitting lasers (VCSELs) are well suited for emerging photonic microsystems due to their low power consumption, ease of integration with other optical components, and single frequency operation. However, the typical VCSEL linewidth of 100 MHz is approximately ten times wider than the natural linewidth of atoms used in atomic beam clocks and trapped atom research, which degrades or completely destroys performance in those systems. This report documents our efforts to reduce VCSEL linewidths below 10 MHz to meet the needs of advanced sub-Doppler atomic microsystems, such as cold-atom traps. We have investigated two complementary approaches to reduce VCSEL linewidth: (A) increasing the laser-cavity quality factor, and (B) decreasing the linewidth enhancement factor (alpha) of the optical gain medium. We have developed two new VCSEL devices that achieved increased cavity quality factors: (1) all-semiconductor extended-cavity VCSELs, and (2) micro-external-cavity surface-emitting lasers (MECSELs). These new VCSEL devices have demonstrated linewidths below 10 MHz, and linewidths below 1 MHz seem feasible with further optimization.

  7. Advances and new functions of VCSEL photonics

    Science.gov (United States)

    Koyama, Fumio

    2014-11-01

    A vertical cavity surface emitting laser (VCSEL) was born in Japan. The 37 years' research and developments opened up various applications including datacom, sensors, optical interconnects, spectroscopy, optical storages, printers, laser displays, laser radar, atomic clock and high power sources. A lot of unique features have been already proven, such as low power consumption, a wafer level testing and so on. The market of VCSELs has been growing up rapidly and they are now key devices in local area networks based on multi-mode optical fibers. Optical interconnections in data centers and supercomputers are attracting much interest. In this paper, the advances on VCSEL photonics will be reviewed. We present the high-speed modulation of VCSELs based on a coupled cavity structure. For further increase in transmission capacity per fiber, the wavelength engineering of VCSEL arrays is discussed, which includes the wavelength stabilization and wavelength tuning based on a micro-machined cantilever structure. We also address a lateral integration platform and new functions, including high-resolution beam scanner, vortex beam creation and large-port free space wavelength selective switch with a Bragg reflector waveguide.

  8. Compliant heterogeneous assemblies of micro-VCSELs as a new materials platform for integrated optoelectronics

    Science.gov (United States)

    Kang, Dongseok; Lee, Sung-Min; Kwong, Anthony; Yoon, Jongseung

    2015-03-01

    Despite many unique advantages, vertical cavity surface emitting lasers (VCSELs) have been available mostly on rigid, planar wafers over restricted areas, thereby limiting their usage for applications that can benefit from large-scale, programmable assemblies, hybrid integration with dissimilar materials and devices, or mechanically flexible constructions. Here, materials design and fabrication strategies that address these limitations of conventional VCSELs are presented. Specialized design of epitaxial materials and etching processes, together with printing-based deterministic assemblies and substrate thermal engineering, enabled defect-free release of microscale VCSELs and their device- and circuit-level implementation on non-native, flexible substrates with performance comparable to devices on the growth substrate.

  9. Reach Extension and Capacity Enhancement of VCSEL-Based Transmission Over Single-Lane MMF Links

    DEFF Research Database (Denmark)

    Tatarczak, Anna; Motaghiannezam, S. M. Reza; Kocot, Chris

    2017-01-01

    This paper reviews and examines several techniques for expanding the carrying capacity of multimode fiber (MMF) using vertical cavity surface emitting lasers (VCSELs). The first approach utilizes short wavelength division multiplexing in combination with MMF optimized for operation between 850 an...

  10. Single-exposure two-dimensional superresolution in digital holography using a vertical cavity surface-emitting laser source array.

    Science.gov (United States)

    Granero, Luis; Zalevsky, Zeev; Micó, Vicente

    2011-04-01

    We present a new implementation capable of producing two-dimensional (2D) superresolution (SR) imaging in a single exposure by aperture synthesis in digital lensless Fourier holography when using angular multiplexing provided by a vertical cavity surface-emitting laser source array. The system performs the recording in a single CCD snapshot of a multiplexed hologram coming from the incoherent addition of multiple subholograms, where each contains information about a different 2D spatial frequency band of the object's spectrum. Thus, a set of nonoverlapping bandpass images of the input object can be recovered by Fourier transformation (FT) of the multiplexed hologram. The SR is obtained by coherent addition of the information contained in each bandpass image while generating an enlarged synthetic aperture. Experimental results demonstrate improvement in resolution and image quality.

  11. Steady-state characteristics of lateral p-n junction vertical-cavity surface-emitting lasers

    Science.gov (United States)

    Ryzhii, V.; Tsutsui, N.; Khmyrova, I.; Ikegami, T.; Vaccaro, P. O.; Taniyama, H.; Aida, T.

    2001-09-01

    We developed an analytical device model for lateral p-n junction vertical-cavity surface-emitting lasers (LJVCSELs) with a quantum well active region. The model takes into account the features of the carrier injection, transport, and recombination in LJVCSELs as well as the features of the photon propagation in the cavity. This model is used for the calculation and analysis of the LJVCSEL steady-state characteristics. It is shown that the localization of the injected electrons primarily near the p-n junction and the reabsorption of lateral propagating photons significantly effects the LJVCSELs performance, in particular, the LJVCSEL threshold current and power-current characteristics. The reincarnation of electrons and holes due to the reabsorption of lateral propagating photons can substantially decrease the threshold current.

  12. Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

    Science.gov (United States)

    Fill, Matthias; Debernardi, Pierluigi; Felder, Ferdinand; Zogg, Hans

    2013-11-01

    Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

  13. Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Fill, Matthias [ETH Zurich, Laser Spectroscopy and Sensing Lab, 8093 Zurich (Switzerland); Phocone AG, 8005 Zurich (Switzerland); Debernardi, Pierluigi [IEIIT-CNR, Torino 10129 (Italy); Felder, Ferdinand [Phocone AG, 8005 Zurich (Switzerland); Zogg, Hans [ETH Zurich (Switzerland)

    2013-11-11

    Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

  14. PbSe quantum well mid-infrared vertical external cavity surface emitting laser on Si-substrates

    Science.gov (United States)

    Fill, M.; Khiar, A.; Rahim, M.; Felder, F.; Zogg, H.

    2011-05-01

    Mid-infrared vertical external cavity surface emitting lasers based on PbSe/PbSrSe multi-quantum-well structures on Si-substrates are realized. A modular design allows growing the active region and the bottom Bragg mirror on two different Si-substrates, thus facilitating comparison between different structures. Lasing is observed from 3.3 to 5.1 μm wavelength and up to 52 °C heat sink temperature with 1.55 μm optical pumping. Simulations show that threshold powers are limited by Shockley-Read recombination with lifetimes as short as 0.1 ns. At higher temperatures, an additional threshold power increase occurs probably due to limited carrier diffusion length and carrier leakage, caused by an unfavorable band alignment.

  15. Study on VCSEL laser heating chip in nuclear magnetic resonance gyroscope

    Science.gov (United States)

    Liang, Xiaoyang; Zhou, Binquan; Wu, Wenfeng; Jia, Yuchen; Wang, Jing

    2017-10-01

    In recent years, atomic gyroscope has become an important direction of inertial navigation. Nuclear magnetic resonance gyroscope has a stronger advantage in the miniaturization of the size. In atomic gyroscope, the lasers are indispensable devices which has an important effect on the improvement of the gyroscope performance. The frequency stability of the VCSEL lasers requires high precision control of temperature. However, the heating current of the laser will definitely bring in the magnetic field, and the sensitive device, alkali vapor cell, is very sensitive to the magnetic field, so that the metal pattern of the heating chip should be designed ingeniously to eliminate the magnetic field introduced by the heating current. In this paper, a heating chip was fabricated by MEMS process, i.e. depositing platinum on semiconductor substrates. Platinum has long been considered as a good resistance material used for measuring temperature The VCSEL laser chip is fixed in the center of the heating chip. The thermometer resistor measures the temperature of the heating chip, which can be considered as the same temperature of the VCSEL laser chip, by turning the temperature signal into voltage signal. The FPGA chip is used as a micro controller, and combined with PID control algorithm constitute a closed loop control circuit. The voltage applied to the heating resistor wire is modified to achieve the temperature control of the VCSEL laser. In this way, the laser frequency can be controlled stably and easily. Ultimately, the temperature stability can be achieved better than 100mK.

  16. Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection

    Czech Academy of Sciences Publication Activity Database

    Civiš, Svatopluk; Zelinger, Zdeněk; Nevrlý, V.; Dorogan, A.; Ferus, Martin; Iakovlev, V.; Sirbu, A.; Mereuta, A.; Caliman, A.; Suruceanu, G.; Kapon, E.

    2014-01-01

    Roč. 147, NOV 2014 (2014), s. 53-59 ISSN 0022-4073 R&D Projects: GA MŠk(CZ) LD14022 Grant - others:Ministerstvo financí, Centrum zahraniční pomoci(CZ) PF049 Institutional support: RVO:61388955 ; RVO:68081707 Keywords : High resolution absorption spectroscopy * Monitoring of hydrogen fluoride, methane, and ammonia * Tunable diode laser spectroscopy (TDLS) Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.645, year: 2014

  17. Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

    Science.gov (United States)

    McInerney, John G.

    2016-03-01

    Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

  18. Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers

    Energy Technology Data Exchange (ETDEWEB)

    Böttge, C. N., E-mail: boettge@optics.arizona.edu; Hader, J.; Kilen, I.; Moloney, J. V. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Koch, S. W. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)

    2014-12-29

    A fully microscopic many-body Maxwell–semiconductor Bloch model is used to investigate the influence of the non-equilibrium carrier dynamics on the short-pulse amplification in mode-locked semiconductor microlaser systems. The numerical solution of the coupled equations allows for a self-consistent investigation of the light–matter coupling dynamics, the carrier kinetics in the saturable absorber and the multiple-quantum-well gain medium, as well as the modification of the light field through the pulse-induced optical polarization. The influence of the pulse-induced non-equilibrium modifications of the carrier distributions in the gain medium and the saturable absorber on the single-pulse amplification in the laser cavity is identified. It is shown that for the same structure, quantum wells, and gain bandwidth the non-equilibrium carrier dynamics lead to two preferred operation regimes: one with pulses in the (sub-)100 fs-regime and one with multi-picosecond pulses. The recovery time of the saturable absorber determines in which regime the device operates.

  19. Amplification of an Autodyne Signal in a Bistable Vertical-Cavity Surface-Emitting Laser with the Use of a Vibrational Resonance

    Science.gov (United States)

    Chizhevsky, V. N.

    2018-01-01

    For the first time, it is demonstrated experimentally that a vibrational resonance in a polarization-bistable vertical-cavity surface-emitting laser can be used to increase the laser response in autodyne detection of microvibrations from reflecting surfaces. In this case, more than 25-fold signal amplification is achieved. The influence of the asymmetry of the bistable potential on the microvibration-detection efficiency is studied.

  20. Demonstration of Raman-based, dispersion-managed VCSEL technology for fibre-to-the-hut application

    Science.gov (United States)

    Rotich Kipnoo, E. K.; Kiboi Boiyo, D.; Isoe, G. M.; Chabata, T. V.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

    2017-03-01

    For the first time, we experimentally investigate the use of vertical cavity surface emitting lasers (VCSELs) in the fibre-to-the-home (FTTH) flavour for Africa, known as fibre-to-the-hut. Fibre-to-the-hut is a VCSEL based passive optical network technology designed and optimized for African continent. VCSELs have attracted attention in optical communication due to its vast advantages; low power consumption, relatively cheap costs among others. A 4.25 Gb/s uncooled VCSEL is used in a dispersion managed, Raman assisted network achieving beyond 100 km of error free transmission suited for FTTHut scenario. Energy-efficient high performance VCSEL is modulated using a 27-1 PRBS pattern and the signal transmitted on a G.655 fibre utilizing the minimum attenuation window.

  1. Grüne oberflächenemittierende Halbleiterlaser (VCSEL) auf Basis von II-VI-Verbindungen

    OpenAIRE

    Kruse, Carsten

    2004-01-01

    Semiconductor-based laser diodes represent a key technology, which is used e.g. for optical data storage, data transmission and metrology purposes. However, the usual edge-emitting device design has some drawbacks concerning the properties of the emitted laser beam. This can be overcome by a more sophisticated approach called vertical-cavity surface emitting laser (VCSEL). The aim of the research within this thesis was the realization of a green fully-epitaxial VCSEL based on the II-VI materi...

  2. Self-sustained pulsation in the oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

    International Nuclear Information System (INIS)

    Kuzmenkov, A. G.; Ustinov, V. M.; Sokolovskii, G. S.; Maleev, N. A.; Blokhin, S. A.; Deryagin, A. G.; Chumak, S. V.; Shulenkov, A. S.; Mikhrin, S. S.; Kovsh, A. R.; McRobbie, A. D.; Sibbett, W.; Cataluna, M. A.; Rafailov, E. U.

    2007-01-01

    The authors report the observation of strong self-pulsations in molecular-beam epitaxy-grown oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots. At continuous-wave operation, self-pulsations with pulse durations of 100-300 ps and repetition rates of 0.2-0.6 GHz were measured. The average optical power of the pulsations was 0.5-1.0 mW at the laser continuous-wave current values of 1.5-2.5 mA

  3. Modal gain and confinement factors in top- and bottom-emitting photonic-crystal VCSEL

    International Nuclear Information System (INIS)

    Czyszanowski, T; Thienpont, H; Panajotov, K; Dems, M

    2008-01-01

    We investigate the modal characteristics of a phosphide photonic-crystal vertical-cavity surface-emitting diode laser (VCSEL) by using the three-dimensional, full vectorial plane wave admittance method. A single-defect, photonic crystal is defined as a regular, hexagonal net of holes with varying depths. The modal gain and confinement factors are compared for two VCSEL structures: with emission either through the DBR with the photonic crystal or through the DBR free of photonic crystal. Significant improvement in the beam quality is demonstrated for the second design

  4. VCSELs based on arrays of sub-monolayer InGaAs quantum dots

    International Nuclear Information System (INIS)

    Blokhin, S. A.; Maleev, N. A.; Kuz'menkov, A. G.; Shernyakov, Yu. M.; Novikov, I. I.; Gordeev, N. Yu.; Dyudelev, V. V.; Sokolovskii, G. S.; Kuchinskii, V. I.; Kulagina, M. M.; Maximov, M. V.; Ustinov, V. M.; Kovsh, A. R.; Mikhrin, S. S.; Ledentsov, N. N.

    2006-01-01

    Vertical-cavity surface-emitting lasers (VCSELs) with an active region based on sub-monolayer InGaAs quantum dots and doped AlGaAs/GaAs distributed Bragg reflectors were grown by MBE. VCSELs with current aperture of 3 μm in diameter demonstrate single-mode lasing in 980-nm range with the threshold current of 0.6 mA, maximum output power up to 4 mW, and external differential efficiency of 68%. Multimode VCSELs with a (10-12)-μm aperture demonstrate ultralow internal optical loss of 0.09% per pass, which compares favorably with the best results obtained in similar lasers with undoped distributed Bragg reflectors

  5. Direct high-frequency modulation of VCSELs and applications in fibre optic RF and microwave links

    International Nuclear Information System (INIS)

    Larsson, Anders; Carlsson, Christina; Gustavsson, Johan; Haglund, Asa; Modh, Peter; Bengtsson, Joergen

    2004-01-01

    With the rapid development of wireless communication networks there is an increasing demand for efficient and cost-effective transmission and distribution of RF signals. Fibre optic RF links, employing directly modulated semiconductor lasers, provide many of the desired characteristics for such distribution systems and in the search for cost-effective solutions, the vertical cavity surface emitting laser (VCSEL) is of interest. It has therefore been the purpose of this work to investigate whether 850 nm VCSELs fulfil basic performance requirements for fibre optic RF links operating in the low-GHz range. The performance of single- and multimode oxide confined VCSELs has been compared, in order to pin-point limitations and to find the optimum design. Fibre optic RF links using VCSELs and multimode fibres have been assembled and evaluated with respect to performance characteristics of importance for wireless communication systems. We have found that optimized single-mode VCSELs provide the highest performance and that links using such VCSELs and high-bandwidth multimode fibres satisfy the requirements in a number of applications, including cellular systems for mobile communication and wireless local area networks

  6. Mid-infrared PbTe vertical external cavity surface emitting laser on Si-substrate with above 1 W output power

    Science.gov (United States)

    Rahim, M.; Fill, M.; Felder, F.; Chappuis, D.; Corda, M.; Zogg, H.

    2009-12-01

    Mid-infrared vertical external cavity surface emitting lasers (VECSELs) emitting above 1 W output power in pulsed mode and up to 17 mW in continuous mode at -172 °C were realized. Emission wavelength changes from 5 μm at -172 °C to 3.6 μm at 20 °C heat sink temperature. The active medium is a one wavelength thick PbTe layer grown by molecular beam epitaxy on a Si-substrate. It is followed by a 2.5 pair Pb1-yEuyTe/EuTe epitaxial Bragg mirror. The cavity is completed with an external curved Pb1-yEuyTe/BaF2 mirror. The VECSEL is optically pumped with 1.55 μm wavelength laser and In-soldered to Cu heat sink. No microstructural processing is needed.

  7. Compactly packaged monolithic four-wavelength VCSEL array with 100-GHz wavelength spacing for future-proof mobile fronthaul transport.

    Science.gov (United States)

    Lee, Eun-Gu; Mun, Sil-Gu; Lee, Sang Soo; Lee, Jyung Chan; Lee, Jong Hyun

    2015-01-12

    We report a cost-effective transmitter optical sub-assembly using a monolithic four-wavelength vertical-cavity surface-emitting laser (VCSEL) array with 100-GHz wavelength spacing for future-proof mobile fronthaul transport using the data rate of common public radio interface option 6. The wavelength spacing is achieved using selectively etched cavity control layers and fine current adjustment. The differences in operating current and output power for maintaining the wavelength spacing of four VCSELs are fiber without any dispersion-compensation techniques.

  8. A 1550-nm all-optical VCSEL-to-VCSEL wavelength conversion of a 8.5-Gb/s data signal and transmission over a 24.7-km fibre

    Science.gov (United States)

    Boiyo, D. Kiboi; Isoe, G. M.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

    2016-02-01

    For the first time, we demonstrate, VCSEL-to-VCSEL wavelength conversion within the low attenuation 1550 nm window, including transmission over fibre and bit error rate (BER) performance characterization. We experimentally demonstrate a low injection power optical wavelength conversion by injecting an optical beam from a signal carrier master vertical cavity surface-emitting laser (VCSEL) into the side-mode of the slave VCSEL. This technique solves the challenge of wavelength collisions and also provides wavelength re-use in typical wavelength division multiplexed (WDM) systems. This paper, for the first time, uses two 1550 nm VCSELs with tunability range of 3 nm for a 5-9.8 mA bias current. The master VCSEL is modulated with a non-return-to-zero (NRZ) pseudo-random binary sequence (PRBS_27-1) 8.5 Gb/s data. A data conversion penalty of 1.1 dB is realized when a 15 dBm injection beam is used. The transmission performance of the converted wavelength from the slave VCSEL is evaluated using BER measurement at a 10-9 threshold. A 0.5 dB transmission penalty of the converted wavelength data is realized in an 8.5 Gb/s transmission over 24.7 km. This work is vital for optical fibre systems that may require wavelength switching for transmission of data signals.

  9. Study of the Radiation-Hardness of VCSEL and PIN

    CERN Document Server

    Gan, K K; Fernando, W; Kagan, H P; Kass, R D; Lebbai, M R M; Merritt, H; Moore, J R; Nagarkar, A; Rizatdinova, F; Skubic, P L; Smith, D S; Strang, M

    2009-01-01

    The silicon trackers of the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Geneva) use optical links for data transmission. An upgrade of the trackers is planned for the Super LHC (SLHC), an upgraded LHC with ten times higher luminosity. We study the radiation-hardness of VCSELs (Vertical-Cavity Surface-Emitting Laser) and GaAs and silicon PINs using 24 GeV/c protons at CERN for possible application in the data transmission upgrade. The optical power of VCSEL arrays decreases significantly after the irradiation but can be partially annealed with high drive currents. The responsivities of the PIN diodes also decrease significantly after irradiation, but can be recovered by operating at higher bias voltage. This provides a simple mechanism to recover from the radiation damage.

  10. Free-Space Optical Interconnect Employing VCSEL Diodes

    Science.gov (United States)

    Simons, Rainee N.; Savich, Gregory R.; Torres, Heidi

    2009-01-01

    Sensor signal processing is widely used on aircraft and spacecraft. The scheme employs multiple input/output nodes for data acquisition and CPU (central processing unit) nodes for data processing. To connect 110 nodes and CPU nodes, scalable interconnections such as backplanes are desired because the number of nodes depends on requirements of each mission. An optical backplane consisting of vertical-cavity surface-emitting lasers (VCSELs), VCSEL drivers, photodetectors, and transimpedance amplifiers is the preferred approach since it can handle several hundred megabits per second data throughput.The next generation of satellite-borne systems will require transceivers and processors that can handle several Gb/s of data. Optical interconnects have been praised for both their speed and functionality with hopes that light can relieve the electrical bottleneck predicted for the near future. Optoelectronic interconnects provide a factor of ten improvement over electrical interconnects.

  11. InGaN multiple-quantum-well epifilms on GaN-sillicon substrates for microcavities and surface-emitting lasers

    International Nuclear Information System (INIS)

    Lee, June Key; Cho, Hoon; Kim, Bok Hee; Park, Si Hyun; Gu, Erdan; Watson, Ian; Dawson, Martin

    2006-01-01

    We report the processing of InGaN/GaN epifilms on GaN-silicon substrates. High-quality InGaN/GaN multi-quantum wells (MQWs) were grown on GaN-silicon substrates, and their membranes were successfully fabricated using a selective wet etching of silicon followed by a dry etching of the AlGaN buffer layer. With atomic force microscope (AFM) measurements and photoluminescence (PL) measurements, we investigated the physical and the optical properties of the InGaN/GaN MQWs membranes. On the InGaN/GaN MQW membranes, dielectric distributed Bragg reflector (DBRs) were successfully deposited, which give, new possibilities for use in GaN microcavity and surface-emitting laser fabrication.

  12. Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm

    International Nuclear Information System (INIS)

    Chang, S.J.; Yu, H.C.; Su, Y.K.; Chen, I.L.; Lee, T.D.; Lu, C.M.; Chiou, C.H.; Lee, Z.H.; Yang, H.P.; Sung, C.P.

    2005-01-01

    Highly strained GaAs-based all-epitaxial oxide confined vertical cavity surface emitting lasers (VCSELs) emitting in 1.25 μm were fabricated. Compared with the designed cavity resonance, it was found that lasing wavelength blue shifted by 29 nm when the driving current was small. The observation of such oxide mode is attributed to the effective optical thickness shrinkage of the oxide layer, and large detuning between the gain peak and cavity resonance

  13. Growth of GaAs-based VCSEL/RCE Structures for Optoelectronic Applications via Molecular Beam Epitaxy

    OpenAIRE

    A. S. Somintac; E. Estacio,; M. F. Bailon; A. A. Salvador

    2003-01-01

    High intensity and sharp emission peaks, at light-hole (842 nm) and heavy-hole (857 nm) excitonic transitionsfor a 90 Å GaAs quantum well (QW) were observed for vertical-cavity surface-emitting laser (VCSEL)structure. Excellent wavelength selectivity and sensitivity were demonstrated by resonant cavity enhanced(RCE) photodetector at 859 nm, corresponding to the energy level of a 95 Å GaAs quantum well.

  14. Visible laser and superluminescent diode based free space and underwater communications

    KAUST Repository

    Ooi, Boon S.

    2017-01-30

    We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.

  15. Visible laser and superluminescent diode based free space and underwater communications

    KAUST Repository

    Ooi, Boon S.

    2017-01-01

    We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.

  16. High-efficiency VCSEL arrays for illumination and sensing in consumer applications

    Science.gov (United States)

    Seurin, Jean-Francois; Zhou, Delai; Xu, Guoyang; Miglo, Alexander; Li, Daizong; Chen, Tong; Guo, Baiming; Ghosh, Chuni

    2016-03-01

    There has been increased interest in vertical-cavity surface-emitting lasers (VCSELs) for illumination and sensing in the consumer market, especially for 3D sensing ("gesture recognition") and 3D image capture. For these applications, the typical wavelength range of interest is 830~950nm and power levels vary from a few milli-Watts to several Watts. The devices are operated in short pulse mode (a few nano-seconds) with fast rise and fall times for time-of-flight applications (ToF), or in CW/quasi-CW for structured light applications. In VCSELs, the narrow spectrum and its low temperature dependence allows the use of narrower filters and therefore better signal-to-noise performance, especially for outdoor applications. In portable devices (mobile devices, wearable devices, laptops etc.) the size of the illumination module (VCSEL and optics) is a primary consideration. VCSELs offer a unique benefit compared to other laser sources in that they are "surface-mountable" and can be easily integrated along with other electronics components on a printed circuit board (PCB). A critical concern is the power-conversion efficiency (PCE) of the illumination source operating at high temperatures (>50 deg C). We report on various VCSEL based devices and diffuser-integrated modules with high efficiency at high temperatures. Over 40% PCE was achieved in broad temperature range of 0-70 °C for either low power single devices or high power VCSEL arrays, with sub- nano-second rise and fall time. These high power VCSEL arrays show excellent reliability, with extracted mean-time-to-failure (MTTF) of over 500 years at 60 °C ambient temperature and 8W peak output.

  17. Reconfigurable high-speed optical fibre networks: Optical wavelength conversion and switching using VCSELs to eliminate channel collisions

    Science.gov (United States)

    Boiyo, Duncan Kiboi; Chabata, T. V.; Kipnoo, E. K. Rotich; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

    2017-01-01

    We experimentally provide an alternative solution to channel collisions through up-wavelength conversion and switching by using vertical cavity surface-emitting lasers (VCSELs). This has been achieved by utilizing purely optical wavelength conversion on VCSELs at the low attenuation, 1550 nm transmission window. The corresponding transmission and bit error-rate (BER) performance evaluation is also presented. In this paper, two 1550 nm VCSELs with 50-150 GHz channel spacing are modulated with a 10 Gb/s NRZ PRBS 27-1 data and their interferences investigated. A channel interference penalty range of 0.15-1.63 dB is incurred for 150-50 GHz channel spacing without transmission. To avoid channel collisions and to minimize high interference penalties, the transmitting VCSEL with data is injected into the side-mode of a slave VCSEL to obtain a new up converted wavelength. A 16 dB extinction ratio of the incoming wavelength is achieved when a 15 dBm transmitting beam is injected into the side-mode of a -4.5 dBm slave VCSEL. At 8.5 Gb/s, a 1.1 dB conversion and a 0.5 dB transmission penalties are realized when the converted wavelength is transmitted over a 24.7 km G.655 fibre. This work offers a low-cost, effective wavelength conversion and channel switching to reduce channel collision probability by reconfiguring channels at the node of networks.

  18. High-speed highly temperature stable 980 nm VCSELs operating at 25 Gb/s at up to 85 °C for short reach optical interconnects

    Science.gov (United States)

    Mutig, Alex; Lott, James A.; Blokhin, Sergey A.; Moser, Philip; Wolf, Philip; Hofmann, Werner; Nadtochiy, Alexey M.; Bimberg, Dieter

    2011-03-01

    The progressive penetration of optical communication links into traditional copper interconnect markets greatly expands the applications of vertical cavity surface emitting lasers (VCSELs) for the next-generation of board-to-board, moduleto- module, chip-to-chip, and on-chip optical interconnects. Stability of the VCSEL parameters at high temperatures is indispensable for such applications, since these lasers typically reside directly on or near integrated circuit chips. Here we present 980 nm oxide-confined VCSELs operating error-free at bit rates up to 25 Gbit/s at temperatures as high as 85 °C without adjustment of the drive current and peak-to-peak modulation voltage. The driver design is therefore simplified and the power consumption of the driver electronics is lowered, reducing the production and operational costs. Small and large signal modulation experiments at various temperatures from 20 up to 85 °C for lasers with different oxide aperture diameters are presented in order to analyze the physical processes controlling the performance of the VCSELs. Temperature insensitive maximum -3 dB bandwidths of around 13-15 GHz for VCSELs with aperture diameters of 10 μm and corresponding parasitic cut-off frequencies exceeding 22 GHz are observed. Presented results demonstrate the suitability of our VCSELs for practical high speed and high temperature stable short-reach optical links.

  19. Modeling and characterization of VCSEL-based avionics full-duplex ethernet (AFDX) gigabit links

    Science.gov (United States)

    Ly, Khadijetou S.; Rissons, A.; Gambardella, E.; Bajon, D.; Mollier, J.-C.

    2008-02-01

    Low cost and intrinsic performances of 850 nm Vertical Cavity Surface Emitting Lasers (VCSELs) compared to Light Emitting Diodes make them very attractive for high speed and short distances data communication links through optical fibers. Weight saving and Electromagnetic Interference withstanding requirements have led to the need of a reliable solution to improve existing avionics high speed buses (e.g. AFDX) up to 1Gbps over 100m. To predict and optimize the performance of the link, the physical behavior of the VCSEL must be well understood. First, a theoretical study is performed through the rate equations adapted to VCSEL in large signal modulation. Averaged turn-on delays and oscillation effects are analytically computed and analyzed for different values of the on- and off state currents. This will affect the eye pattern, timing jitter and Bit Error Rate (BER) of the signal that must remain within IEEE 802.3 standard limits. In particular, the off-state current is minimized below the threshold to allow the highest possible Extinction Ratio. At this level, the spontaneous emission is dominating and leads to significant turn-on delay, turn-on jitter and bit pattern effects. Also, the transverse multimode behavior of VCSELs, caused by Spatial Hole Burning leads to some dispersion in the fiber and degradation of BER. VCSEL to Multimode Fiber coupling model is provided for prediction and optimization of modal dispersion. Lastly, turn-on delay measurements are performed on a real mock-up and results are compared with calculations.

  20. Novel Cavities in Vertical External Cavity Surface Emitting Lasers for Emission in Broad Spectral Region by Means of Nonlinear Frequency Conversion

    Science.gov (United States)

    Lukowski, Michal L.

    Optically pumped semiconductor vertical external cavity surface emitting lasers (VECSEL) were first demonstrated in the mid 1990's. Due to the unique design properties of extended cavity lasers VECSELs have been able to provide tunable, high-output powers while maintaining excellent beam quality. These features offer a wide range of possible applications in areas such as medicine, spectroscopy, defense, imaging, communications and entertainment. Nowadays, newly developed VECSELs, cover the spectral regions from red (600 nm) to around 5 microm. By taking the advantage of the open cavity design, the emission can be further expanded to UV or THz regions by the means of intracavity nonlinear frequency generation. The objective of this dissertation is to investigate and extend the capabilities of high-power VECSELs by utilizing novel nonlinear conversion techniques. Optically pumped VECSELs based on GaAs semiconductor heterostructures have been demonstrated to provide exceptionally high output powers covering the 900 to 1200 nm spectral region with diffraction limited beam quality. The free space cavity design allows for access to the high intracavity circulating powers where high efficiency nonlinear frequency conversions and wavelength tuning can be obtained. As an introduction, this dissertation consists of a brief history of the development of VECSELs as well as wafer design, chip fabrication and resonator cavity design for optimal frequency conversion. Specifically, the different types of laser cavities such as: linear cavity, V-shaped cavity and patented T-shaped cavity are described, since their optimization is crucial for transverse mode quality, stability, tunability and efficient frequency conversion. All types of nonlinear conversions such as second harmonic, sum frequency and difference frequency generation are discussed in extensive detail. The theoretical simulation and the development of the high-power, tunable blue and green VECSEL by the means of type I

  1. Room temperature continuous wave mid-infrared VCSEL operating at 3.35 μm

    Science.gov (United States)

    Jayaraman, V.; Segal, S.; Lascola, K.; Burgner, C.; Towner, F.; Cazabat, A.; Cole, G. D.; Follman, D.; Heu, P.; Deutsch, C.

    2018-02-01

    Tunable vertical cavity surface emitting lasers (VCSELs) offer a potentially low cost tunable optical source in the 3-5 μm range that will enable commercial spectroscopic sensing of numerous environmentally and industrially important gases including methane, ethane, nitrous oxide, and carbon monoxide. Thus far, achieving room temperature continuous wave (RTCW) VCSEL operation at wavelengths beyond 3 μm has remained an elusive goal. In this paper, we introduce a new device structure that has enabled RTCW VCSEL operation near the methane absorption lines at 3.35 μm. This device structure employs two GaAs/AlGaAs mirrors wafer-bonded to an optically pumped active region comprising compressively strained type-I InGaAsSb quantum wells grown on a GaSb substrate. This substrate is removed in processing, as is one of the GaAs mirror substrates. The VCSEL structure is optically pumped at room temperature with a CW 1550 nm laser through the GaAs substrate, while the emitted 3.3 μm light is captured out of the top of the device. Power and spectrum shape measured as a function of pump power exhibit clear threshold behavior and robust singlemode spectra.

  2. Near Field and Far Field Effects in the Taguchi-Optimized Design of AN InP/GaAs-BASED Double Wafer-Fused Mqw Long-Wavelength Vertical-Cavity Surface-Emitting Laser

    Science.gov (United States)

    Menon, P. S.; Kandiah, K.; Mandeep, J. S.; Shaari, S.; Apte, P. R.

    Long-wavelength VCSELs (LW-VCSEL) operating in the 1.55 μm wavelength regime offer the advantages of low dispersion and optical loss in fiber optic transmission systems which are crucial in increasing data transmission speed and reducing implementation cost of fiber-to-the-home (FTTH) access networks. LW-VCSELs are attractive light sources because they offer unique features such as low power consumption, narrow beam divergence and ease of fabrication for two-dimensional arrays. This paper compares the near field and far field effects of the numerically investigated LW-VCSEL for various design parameters of the device. The optical intensity profile far from the device surface, in the Fraunhofer region, is important for the optical coupling of the laser with other optical components. The near field pattern is obtained from the structure output whereas the far-field pattern is essentially a two-dimensional fast Fourier Transform (FFT) of the near-field pattern. Design parameters such as the number of wells in the multi-quantum-well (MQW) region, the thickness of the MQW and the effect of using Taguchi's orthogonal array method to optimize the device design parameters on the near/far field patterns are evaluated in this paper. We have successfully increased the peak lasing power from an initial 4.84 mW to 12.38 mW at a bias voltage of 2 V and optical wavelength of 1.55 μm using Taguchi's orthogonal array. As a result of the Taguchi optimization and fine tuning, the device threshold current is found to increase along with a slight decrease in the modulation speed due to increased device widths.

  3. Resonant MEMS tunable VCSEL

    DEFF Research Database (Denmark)

    Ansbæk, Thor; Chung, Il-Sug; Semenova, Elizaveta

    2013-01-01

    We demonstrate how resonant excitation of a microelectro-mechanical system can be used to increase the tuning range of a vertical-cavity surface-emitting laser two-fold by enabling both blue- and red-shifting of the wavelength. In this way a short-cavity design enabling wide tuning range can...... be realized. A high-index-contrast subwavelength grating verticalcavity surface-emitting laser with a monolithically integrated anti-reflection coating is presented. By incorporating an antireflection coating into the air cavity, higher tuning efficiency can be achieved at low threshold current. The first...

  4. Optical Characterizations of VCSEL for Emission at 850 nm with Al Oxide Confinement Layers

    Science.gov (United States)

    Mokhtari, Merwan; Pagnod-Rossiaux, Philippe; Laruelle, Francois; Landesman, Jean-Pierre; Moreac, Alain; Levallois, Christophe; Cassidy, Daniel T.

    2018-03-01

    In-plane micro-photoluminescence (μ-PL) and micro-reflectivity measurements have been performed at room temperature by optical excitation perpendicular to the surface of two different structures: a complete vertical surface-emitting laser (VCSEL) structure and a VCSEL without the upper p-type distributed Bragg reflector (P-DBR). The two structures were both laterally oxidized and measurements were made on the top of oxidized and unoxidized regions. We show that, since the photoluminescence (PL) spectra consist of the cumulative effect of InGaAs/AlGaAs multi-quantum wells (MQWs) luminescence and interferences in the DBR, the presence or not of the P-DBR and oxide layers can significantly modify the spectrum. μ-PL mapping performed on full VCSEL structures clearly shows oxidized and unoxidized regions that are not resolved with visible light optical microscopy. Finally, preliminary measurements of the degree of polarization (DOP) of the PL have been made on a complete VCSEL structure before and after an oxidation process. We obtain an image of DOP measured by polarization-resolved μ-PL. These measurements allow us to evaluate the main components of strain.

  5. Comparison of single-/few-/multi-mode 850 nm VCSELs for optical OFDM transmission.

    Science.gov (United States)

    Kao, Hsuan-Yun; Tsai, Cheng-Ting; Leong, Shan-Fong; Peng, Chun-Yen; Chi, Yu-Chieh; Huang, Jian Jang; Kuo, Hao-Chung; Shih, Tien-Tsorng; Jou, Jau-Ji; Cheng, Wood-Hi; Wu, Chao-Hsin; Lin, Gong-Ru

    2017-07-10

    For high-speed optical OFDM transmission applications, a comprehensive comparison of the homemade multi-/few-/single-transverse mode (MM/FM/SM) vertical cavity surface emitting laser (VCSEL) chips is performed. With microwave probe, the direct encoding of pre-leveled 16-QAM OFDM data and transmission over 100-m-long OM4 multi-mode-fiber (MMF) are demonstrated for intra-datacenter applications. The MM VCSEL chip with the largest emission aperture of 11 μm reveals the highest differential quantum efficiency which provides the highest optical power of 8.67 mW but exhibits the lowest encodable bandwidth of 21 GHz. In contrast, the SM VCSEL chip fabricated with the smallest emission aperture of only 3 μm provides the highest 3-dB encoding bandwidth up to 23 GHz at a cost of slight heat accumulation. After optimization, with the trade-off set between the receiving signal-to-noise ratio (SNR) and bandwidth, the FM VCSEL chip guarantees the highest optical OFDM transmission bit rate of 96 Gbit/s under back-to-back case with its strongest throughput. Among three VCSEL chips, the SM VCSEL chip with nearly modal-dispersion free feature is treated as the best candidate for carrying the pre-leveled 16-QAM OFDM data over 100-m OM4-MMF with same material structure but exhibits different oxide-layer confined gain cross-sections with one another at 80-Gbit/s with the smallest receiving power penalty of 1.77 dB.

  6. Ultra-wideband WDM VCSEL arrays by lateral heterogeneous integration

    Science.gov (United States)

    Geske, Jon

    Advancements in heterogeneous integration are a driving factor in the development of evermore sophisticated and functional electronic and photonic devices. Such advancements will merge the optical and electronic capabilities of different material systems onto a common integrated device platform. This thesis presents a new lateral heterogeneous integration technology called nonplanar wafer bonding. The technique is capable of integrating multiple dissimilar semiconductor device structures on the surface of a substrate in a single wafer bond step, leaving different integrated device structures adjacent to each other on the wafer surface. Material characterization and numerical simulations confirm that the material quality is not compromised during the process. Nonplanar wafer bonding is used to fabricate ultra-wideband wavelength division multiplexed (WDM) vertical-cavity surface-emitting laser (VCSEL) arrays. The optically-pumped VCSEL arrays span 140 nm from 1470 to 1610 nm, a record wavelength span for devices operating in this wavelength range. The array uses eight wavelength channels to span the 140 nm with all channels separated by precisely 20 nm. All channels in the array operate single mode to at least 65°C with output power uniformity of +/- 1 dB. The ultra-wideband WDM VCSEL arrays are a significant first step toward the development of a single-chip source for optical networks based on coarse WDM (CWDM), a low-cost alternative to traditional dense WDM. The CWDM VCSEL arrays make use of fully-oxidized distributed Bragg reflectors (DBRs) to provide the wideband reflectivity required for optical feedback and lasing across 140 rim. In addition, a novel optically-pumped active region design is presented. It is demonstrated, with an analytical model and experimental results, that the new active-region design significantly improves the carrier uniformity in the quantum wells and results in a 50% lasing threshold reduction and a 20°C improvement in the peak

  7. Optical power of VCSELs stabilized to 35 ppm/°C without a TEC

    Science.gov (United States)

    Downing, John

    2015-03-01

    This paper reports a method and system comprising a light source, an electronic method, and a calibration procedure for stabilizing the optical power of vertical-cavity surface-emitting lasers (VCSELs) and laser diodes (LDs) without the use thermoelectric coolers (TECs). The system eliminates the needs for custom interference coatings, polarization adjustments, and the exact alignment required by the optical method reported in 2013 [1]. It can precisely compensate for the effects of temperature and wavelength drift on photodiode responsivity as well as changes in VCSEL beam quality and polarization angle over a 50°C temperature range. Data obtained from light sources built with single-mode polarization-locked VCSELs demonstrate that 30 ppm/°C stability can be readily obtained. The system has advantages over TECstabilized laser modules that include: 1) 90% lower relative RMS optical power and temperature sensitivity, 2) a five-fold enhancement of wall-plug efficiency, 3) less component testing and sorting, 4) lower manufacturing costs, and 5) automated calibration in batches at time of manufacture is practical. The system is ideally suited for battery-powered environmental and in-home medical monitoring applications.

  8. Comparative study on stained InGaAs quantum wells for high-speed optical-interconnect VCSELs

    Science.gov (United States)

    Li, Hui; Jia, Xiaowei

    2018-05-01

    The gain-carrier characteristics of InGaAs quantum well for 980 nm high-speed, energy-efficient vertical-cavity surface-emitting lasers are investigated. We specially studied the potentially InGaAs quantum well designs can be used for the active region of energy-efficient, temperature-stable 980-nm VCSEL, which introduced a quantum well gain peak wavelength-to-cavity resonance wavelength offset to improve the dynamic performance at high operation temperature. Several candidate quantum wells are being compared in theory and measurement. We found that ∼5 nm InGaAs QW with ∼6 nm barrier thickness is suitable for the active region of high-speed optical interconnect 980 nm VCSELs, and no significant improvement in the 20% range of In content of InGaAs QWs. The results are useful for next generation green photonic device design.

  9. Simultaneous 10 Gbps data and polarization-based pulse-per-second clock transmission using a single VCSEL for high-speed optical fibre access networks

    Science.gov (United States)

    Isoe, G. M.; Wassin, S.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

    2017-01-01

    Access networks based on vertical cavity surface emitting laser (VCSEL) transmitters offer alternative solution in delivering different high bandwidth, cost effective services to the customer premises. Clock and reference frequency distribution is critical for applications such as Coordinated Universal Time (UTC), GPS, banking and big data science projects. Simultaneous distribution of both data and timing signals over shared infrastructure is thus desirable. In this paper, we propose and experimentally demonstrate a novel, cost-effective technique for multi-signal modulation on a single VCSEL transmitter. Two signal types, an intensity modulated 10 Gbps data signal and a polarization-based pulse per second (PPS) clock signal are directly modulated onto a single VCSEL carrier at 1310 nm. Spectral efficiency is maximized by exploiting inherent orthogonal polarization switching of the VCSEL with changing bias in transmission of the PPS signal. A 10 Gbps VCSEL transmission with PPS over 11 km of G.652 fibre introduced a transmission penalty of 0.52 dB. The contribution of PPS to this penalty was found to be 0.08 dB.

  10. Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization

    Energy Technology Data Exchange (ETDEWEB)

    Lamy, J.M.; Levallois, C.; Nakhar, A.; Caroff, P.; Paranthoen, C.; Piron, R.; Le Corre, A.; Loualiche, S. [UMR C6082 FOTON - INSA de Rennes, 20 Avenue des Buttes de Coesmes, 35043 Rennes (France); Ramdane, A. [Laboratoire de Photonique et Nanostructures, CNRS UPR20, Route de Nozay, 91460 Marcoussis (France)

    2007-06-15

    We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is measured. The optically pumped VCSEL is fabricated by metallic bonding, which allows the deposition of two dielectrics Bragg mirrors. The VCSEL with an active region based on InGaAs/InGaAsP quantum wells exhibits a lasing emission at 1.578 {mu}m at room temperature under continuous wave operation. The VCSEL with an active region based on quantum wires shows a luminescence at 1.53 {mu}m strongly polarized along the direction [1 anti 10] which is promising for the stabilization of in plane polarization of VCSEL emission. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization

    International Nuclear Information System (INIS)

    Lamy, J.M.; Levallois, C.; Nakhar, A.; Caroff, P.; Paranthoen, C.; Piron, R.; Le Corre, A.; Loualiche, S.; Ramdane, A.

    2007-01-01

    We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is measured. The optically pumped VCSEL is fabricated by metallic bonding, which allows the deposition of two dielectrics Bragg mirrors. The VCSEL with an active region based on InGaAs/InGaAsP quantum wells exhibits a lasing emission at 1.578 μm at room temperature under continuous wave operation. The VCSEL with an active region based on quantum wires shows a luminescence at 1.53 μm strongly polarized along the direction [1 anti 10] which is promising for the stabilization of in plane polarization of VCSEL emission. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. New VCSEL technology with scalability for single mode operation and densely integrated arrays

    Science.gov (United States)

    Zhao, Guowei; Demir, Abdullah; Freisem, Sabine; Zhang, Yu; Liu, Xiaohang; Deppe, Dennis G.

    2011-06-01

    Data are presented demonstrating a new lithographic vertical-cavity surface-emitting laser (VCSEL) technology, which produces simultaneous mode- and current-confinement only by lithography and epitaxial crystal growth. The devices are grown by solid source molecular beam epitaxy, and have lithographically defined sizes that vary from 3 μm to 20 μm. The lithographic process allows the devices to have high uniformity throughout the wafer and scalability to very small size. The 3 μm device shows a threshold current of 310 μA, the slope efficiency of 0.81 W/A, and the maximum output power of more than 5 mW. The 3 μm device also shows single-mode single-polarization operation without the use of surface grating, and has over 25 dB side-mode-suppression-ratio up to 1 mW of output power. The devices have low thermal resistance due to the elimination of oxide aperture. High reliability is achieved by removal of internal strain caused by the oxide, stress test shows no degradation for the 3 μm device operating at very high injection current level of 142 kA/cm2 for 1000 hours, while at this dive level commercial VCSELs fail rapidly. The lithographic VCSEL technology can lead to manufacture of reliable small size laser diode, which will have application in large area 2-D arrays and low power sensors.

  13. Transverse mode control in proton-implanted and oxide-confined VCSELs via patterned dielectric anti-phase filters

    Science.gov (United States)

    Kesler, Benjamin; O'Brien, Thomas; Dallesasse, John M.

    2017-02-01

    A novel method for controlling the transverse lasing modes in both proton implanted and oxide-confined vertical- cavity surface-emitting lasers (VCSELs) with a multi-layer, patterned, dielectric anti-phase (DAP) filter is pre- sented. Using a simple photolithographic liftoff process, dielectric layers are deposited and patterned on individual VCSELs to modify (increase or decrease) the mirror reflectivity across the emission aperture via anti-phase reflections, creating spatially-dependent threshold material gain. The shape of the dielectric pattern can be tailored to overlap with specific transverse VCSEL modes or subsets of transverse modes to either facilitate or inhibit lasing by decreasing or increasing, respectively, the threshold modal gain. A silicon dioxide (SiO2) and titanium dioxide (TiO2) anti-phase filter is used to achieve a single-fundamental-mode, continuous-wave output power greater than 4.0 mW in an oxide-confined VCSEL at a lasing wavelength of 850 nm. A filter consisting of SiO2 and TiO2 is used to facilitate injection-current-insensitive fundamental mode and lower order mode lasing in proton implanted VCSELs at a lasing wavelength of 850 nm. Higher refractive index dielectric materials such as amorphous silicon (a-Si) can be used to increase the effectiveness of the anti-phase filter on proton implanted devices by reducing the threshold modal gain of any spatially overlapping modes. This additive, non-destructive method allows for mode selection at any lasing wavelength and for any VCSEL layer structure without the need for semiconductor etching or epitaxial regrowth. It also offers the capability of designing a filter based upon available optical coating materials.

  14. Self-aligned BCB planarization method for high-frequency signal injection in a VCSEL with an integrated modulator

    Science.gov (United States)

    Marigo-Lombart, Ludovic; Doucet, Jean-Baptiste; Lecestre, Aurélie; Reig, Benjamin; Rousset, Bernard; Thienpont, Hugo; Panajotov, Krassimir; Almuneau, Guilhem

    2016-04-01

    The huge increase of datacom capacities requires lasers sources with more and more bandwidth performances. Vertical-Cavity Surface-Emitting Lasers (VCSEL) in direct modulation is a good candidate, already widely used for short communication links such as in datacenters. Recently several different approaches have been proposed to further extend the direct modulation bandwidth of these devices, by improving the VCSEL structure, or by combining the VCSEL with another high speed element such as lateral slow light modulator or transistor/laser based structure (TVCSEL). We propose to increase the modulation bandwidth by vertically integrating a continuous-wave VCSEL with a high-speed electro-modulator. This vertical structure implies multiple electrodes with sufficiently good electrical separation between the different input electrical signals. This high frequency modulation requires both good electrical insulation between metal electrodes and an optimized design of the coplanar lines. BenzoCyclobutene (BCB) thanks to its low dielectric constant, low losses, low moisture absorption and good thermal stability, is often used as insulating layer. Also, BCB planarization offers the advantages of simpler and more reliable technological process flow in such integrated VCSEL/modulator structures with important reliefs. As described by Burdeaux et al. a degree of planarization (DOP) of about 95% can be achieved by simple spin coating whatever the device thickness. In most of the cases, the BCB planarization process requires an additional photolithography step in order to open an access to the mesa surface, thus involving a tight mask alignment and resulting in a degraded planarization. In this paper, we propose a self-aligned process with improved BCB planarization by combining a hot isostatic pressing derived from nanoimprint techniques with a dry plasma etching step.

  15. Optical interconnects based on VCSELs and low-loss silicon photonics

    Science.gov (United States)

    Aalto, Timo; Harjanne, Mikko; Karppinen, Mikko; Cherchi, Matteo; Sitomaniemi, Aila; Ollila, Jyrki; Malacarne, Antonio; Neumeyr, Christian

    2018-02-01

    Silicon photonics with micron-scale Si waveguides offers most of the benefits of submicron SOI technology while avoiding most of its limitations. In particular, thick silicon-on-insulator (SOI) waveguides offer 0.1 dB/cm propagation loss, polarization independency, broadband single-mode (SM) operation from 1.2 to >4 µm wavelength and ability to transmit high optical powers (>1 W). Here we describe the feasibility of Thick-SOI technology for advanced optical interconnects. With 12 μm SOI waveguides we demonstrate efficient coupling between standard single-mode fibers, vertical-cavity surface-emitting lasers (VCSELs) and photodetectors (PDs), as well as wavelength multiplexing in small footprint. Discrete VCSELs and PDs already support 28 Gb/s on-off keying (OOK), which shows a path towards 50-100 Gb/s bandwidth per wavelength by using more advanced modulation formats like PAM4. Directly modulated VCSELs enable very power-efficient optical interconnects for up to 40 km distance. Furthermore, with 3 μm SOI waveguides we demonstrate extremely dense and low-loss integration of numerous optical functions, such as multiplexers, filters, switches and delay lines. Also polarization independent and athermal operation is demonstrated. The latter is achieved by using short polymer waveguides to compensate for the thermo-optic effect in silicon. New concepts for isolator integration and polarization rotation are also explained.

  16. Characterization of InAs quantum wires on (001) InP: toward the realization of VCSEL structures with a stabilized polarization

    OpenAIRE

    Lamy , Jean-Michel; Levallois , Christophe; Nakkar , Abdulhadi; Caroff , Philippe; Paranthoen , Cyril; Dehaese , Olivier; Le Corre , Alain; Ramdane , Abderrahim; Loualiche , Slimane

    2006-01-01

    International audience; We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is...

  17. Semiconductor lasers driven by self-sustained chaotic electronic oscillators and applications to optical chaos cryptography.

    Science.gov (United States)

    Kingni, Sifeu Takougang; Mbé, Jimmi Hervé Talla; Woafo, Paul

    2012-09-01

    In this work, we numerically study the dynamics of vertical cavity surface emitting laser (VCSEL) firstly when it is driven by Chua's oscillator, secondly in case where it is driven by a broad frequency spectral bandwidth chaotic oscillator developed by Nana et al. [Commun. Nonlinear Sci. Numer. Simul. 14, 2266 (2009)]. We demonstrated that the VCSEL generated robust chaotic dynamics compared to the ones found in VCSEL subject to a sinusoidally modulated current and therefore it is more suitable for chaos encryption techniques. The synchronization characteristics and the communication performances of unidirectional coupled VCSEL driven by the broad frequency spectral bandwidth chaotic oscillators are investigated numerically. The results show that high-quality synchronization and transmission of messages can be realized for suitable system parameters. Chaos shift keying method is successfully applied to encrypt a message at a high bitrate.

  18. Printed Large-Area Single-Mode Photonic Crystal Bandedge Surface-Emitting Lasers on Silicon (Open Access Publisher’s Version)

    Science.gov (United States)

    2016-01-04

    TM, p) polarizations, for PCSEL-I and -II respectively. One can see that all of these bands are very flat at the edges close to Γ point, which... organised In0. 5Ga0. 5As quantum dot laser on silicon. Electron. Lett. 41, 742–744 (2005). 7. Balakrishnan, G. et al. Room-Temperature Optically Pumped

  19. Single-photon emission at a rate of 143 MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser

    Energy Technology Data Exchange (ETDEWEB)

    Schlehahn, A.; Gschrey, M.; Schnauber, P.; Schulze, J.-H.; Rodt, S.; Strittmatter, A.; Heindel, T., E-mail: tobias.heindel@tu-berlin.de; Reitzenstein, S. [Institut für Festkörperphysik, Technische Universität Berlin, Berlin 10623 (Germany); Gaafar, M.; Vaupel, M.; Stolz, W.; Rahimi-Iman, A.; Koch, M. [Department of Physics and Materials Science Center, Philipps-Universität Marburg, 35032 Marburg (Germany)

    2015-07-27

    We report on the realization of a quantum dot (QD) based single-photon source with a record-high single-photon emission rate. The quantum light source consists of an InGaAs QD which is deterministically integrated within a monolithic microlens with a distributed Bragg reflector as back-side mirror, which is triggered using the frequency-doubled emission of a mode-locked vertical-external-cavity surface-emitting laser (ML-VECSEL). The utilized compact and stable laser system allows us to excite the single-QD microlens at a wavelength of 508 nm with a pulse repetition rate close to 500 MHz at a pulse width of 4.2 ps. Probing the photon statistics of the emission from a single QD state at saturation, we demonstrate single-photon emission of the QD-microlens chip with g{sup (2)}(0) < 0.03 at a record-high single-photon flux of (143 ± 16) MHz collected by the first lens of the detection system. Our approach is fully compatible with resonant excitation schemes using wavelength tunable ML-VECSELs, which will optimize the quantum optical properties of the single-photon emission in terms of photon indistinguishability.

  20. Capacity upgrade in short-reach optical fibre networks: simultaneous 4-PAM 20 Gbps data and polarization-modulated PPS clock signal using a single VCSEL carrier

    Science.gov (United States)

    Isoe, G. M.; Wassin, S.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

    2017-11-01

    In this work, a four-level pulse amplitude modulation (4-PAM) format with a polarization-modulated pulse per second (PPS) clock signal using a single vertical cavity surface emitting laser (VCSEL) carrier is for the first time experimentally demonstrated. We propose uncomplex alternative technique for increasing capacity and flexibility in short-reach optical communication links through multi-signal modulation onto a single VCSEL carrier. A 20 Gbps 4-PAM data signal is directly modulated onto a single mode 10 GHz bandwidth VCSEL carrier at 1310 nm, therefore, doubling the network bit rate. Carrier spectral efficiency is further maximized by exploiting the inherent orthogonal polarization switching of the VCSEL carrier with changing bias in transmission of a PPS clock signal. We, therefore, simultaneously transmit a 20 Gbps 4-PAM data signal and a polarization-based PPS clock signal using a single VCSEL carrier. It is the first time a signal VCSEL carrier is reported to simultaneously transmit a directly modulated 20 Gbps 4-PAM data signal and a polarization-based PPS clock signal. We further demonstrate on the design of a software-defined digital signal processing (DSP)-assisted receiver as an alternative to costly receiver hardware. Experimental results show that a 3.21 km fibre transmission with simultaneous 20 Gbps 4-PAM data signal and polarization-based PPS clock signal introduced a penalty of 3.76 dB. The contribution of polarization-based PPS clock signal to this penalty was found out to be 0.41 dB. Simultaneous distribution of data and timing clock signals over shared network infrastructure significantly increases the aggregated data rate at different optical network units (ONUs), without costly investment.

  1. Short-wavelength infrared imaging using low dark current InGaAs detector arrays and vertical-cavity surface-emitting laser illuminators

    Science.gov (United States)

    Macdougal, Michael; Geske, Jon; Wang, Chad; Follman, David

    2011-06-01

    We describe the factors that go into the component choices for a short wavelength IR (SWIR) imager, which include the SWIR sensor, the lens, and the illuminator. We have shown the factors for reducing dark current, and shown that we can achieve well below 1.5 nA/cm2 for 15 μm devices at 7 °C. In addition, we have mated our InGaAs detector arrays to 640×512 readout integrated integrated circuits to make focal plane arrays (FPAs). The resulting FPAs are capable of imaging photon fluxes with wavelengths between 1 and 1.6 μm at low light levels. The dark current associated with these FPAs is extremely low, exhibiting a mean dark current density of 0.26 nA/cm2 at 0 °C. Noise due to the readout can be reduced from 95 to 57 electrons by using off-chip correlated double sampling. In addition, Aerius has developed laser arrays that provide flat illumination in scenes that are normally light-starved. The illuminators have 40% wall-plug efficiency and provide low-speckle illumination, and provide artifact-free imagery versus conventional laser illuminators.

  2. Using a Single VCSEL Source Employing OFDM Downstream Signal and Remodulated OOK Upstream Signal for Bi-directional Visible Light Communications.

    Science.gov (United States)

    Yeh, Chien-Hung; Wei, Liang-Yu; Chow, Chi-Wai

    2017-11-20

    In this work, we propose and demonstrate for the first time up to our knowledge, using a 682 nm visible vertical-cavity surface-emitting laser (VCSEL) applied in a bi-directional wavelength remodulated VLC system with a free space transmission distance of 3 m. To achieve a high VLC downstream traffic, spectral efficient orthogonal-frequency-division-multiplexing quadrature-amplitude-modulation (OFDM-QAM) with bit and power loading algorithms are applied on the VCSEL in the central office (CO). The OFDM downstream wavelength is remodulated by an acousto-optic modulator (AOM) with OOK modulation to produce the upstream traffic in the client side. Hence, only a single VCSEL laser is needed for the proposed bi-directional VLC system, achieving 10.6 Gbit/s OFDM downstream and 2 Mbit/s remodulated OOK upstream simultaneously. For the proposed system, as a single laser source with wavelength remodulation is used, the laser wavelength and temperature managements at the client side are not needed; and the whole system could be cost effective and energy efficient.

  3. Full 3D FDTD analysis of Electromagnetic Field in Photonic Crystal VCSEL

    International Nuclear Information System (INIS)

    Liu Fa; Xu Chen; Xie Yiyang; Zhao Zhenbo; Zhou Kang; Wang Baoqiang; Liu Yingming; Shen Guangdi

    2011-01-01

    The effect of etch damage to the mode characteristics of photonic crystal vertical cavity surface emitting lasers was simulated in this paper. The devices simulated in this paper are 850-nm GaAs-based VCSELs with photonic crystal. And the devices were simulated by using finite difference time domain (FDTD) method. Limited to the computer resource, the top DBR was simulated only, and the traverse size was smaller than the real size. In order to highlight the impact of the etch damage, several kinds of light sources and photonic crystal structures were simulated separately, and each situation is calculated in the condition of ideal photonic crystal and photonic crystal with etch damage respectively. All parameters of device and light feature are referred to the real condition.

  4. Full 3D FDTD analysis of Electromagnetic Field in Photonic Crystal VCSEL

    Energy Technology Data Exchange (ETDEWEB)

    Liu Fa; Xu Chen; Xie Yiyang; Zhao Zhenbo; Zhou Kang; Wang Baoqiang; Liu Yingming; Shen Guangdi, E-mail: liufa20719@126.com [Key Laboratory of Opto-electronics Technology (Beijing University of Technology), Ministry of Education, Beijing University of Technology, 100 Ping Le Yuan, Chaoyang District, Beijing 100124 (China)

    2011-02-01

    The effect of etch damage to the mode characteristics of photonic crystal vertical cavity surface emitting lasers was simulated in this paper. The devices simulated in this paper are 850-nm GaAs-based VCSELs with photonic crystal. And the devices were simulated by using finite difference time domain (FDTD) method. Limited to the computer resource, the top DBR was simulated only, and the traverse size was smaller than the real size. In order to highlight the impact of the etch damage, several kinds of light sources and photonic crystal structures were simulated separately, and each situation is calculated in the condition of ideal photonic crystal and photonic crystal with etch damage respectively. All parameters of device and light feature are referred to the real condition.

  5. Radiation hardness and lifetime studies of LEDs and VCSELs for the optical readout of the ATLAS SCT

    CERN Document Server

    Beringer, J; Mommsen, R K; Nickerson, R B; Weidberg, A R; Monnier, E; Hou, H Q; Lear, K L

    1999-01-01

    We study the radiation hardness and the lifetime of Light Emitting Diodes (LEDs) and Vertical Cavity Surface Emitting Laser diodes (VCSELs) in the context of the development of the optical readout for the ATLAS SemiConductor Tracker (SCT) at LHC. About 170 LEDs from two different manufacturers and about 130 VCSELs were irradiated with neutron and proton fluences equivalent to (and in some cases more than twice as high as) the combined neutral and charged particle fluence of about 5x10 sup 1 sup 4 n (1 MeV eq. in GaAs)/cm sup 2 expected in the ATLAS inner detector. We report on the radiation damage and the conditions required for its partial annealing under forward bias, we calculate radiation damage constants, and we present post-irradiation failure rates for LEDs and VCSELs. The lifetime after irradiation was investigated by operating the diodes at an elevated temperature of 50 degree sign C for several months, resulting in operating times corresponding to up to 70 years of operation in the ATLAS SCT. From o...

  6. Vcsel structure

    DEFF Research Database (Denmark)

    2015-01-01

    .5, and wherein an index of refraction of low-index sections of the grating structure is less than 2. The core grating region defines a projection in a direction normal to the grating layer. The grating reflector further comprises a cap layer abutting the grating layer, and an index of refraction of the cap layer...... within the projection of the core grating region onto the cap layer is at least 2.5, and within the projection of the core grating region, the cap layer is abutted by a first solid dielectric low-index layer, an index of refraction of the first low-index layer or air being less than 2; and within...... the projection of the core grating region, the grating layer is also abutted by a second low-index layer and/or by air, an index of refraction of the second low-index layer or air being less than 2. The VCSEL structure furthermore comprises a first reflector and an active region for providing a cavity...

  7. Pb{sub 1–x}Eu{sub x}Te alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm

    Energy Technology Data Exchange (ETDEWEB)

    Pashkeev, D. A., E-mail: d.pashkeev@gmail.com; Selivanov, Yu. G.; Chizhevskii, E. G.; Zasavitskiy, I. I. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

    2016-02-15

    The optical properties of epitaxial layers and heterostructures based on Pb{sub 1–x}Eu{sub x}Te alloys (0 ⩽ x ⩽ 1) are analyzed in the context of designing Bragg mirrors and vertical-cavity surface-emitting lasers for the midinfrared spectral range. It is shown that the optimal heteropair for laser microcavities is Pb{sub 1–x}Eu{sub x}Te(x ≈ 0.06)/EuTe. On the basis of this heteropair, highly reflective Bragg mirrors consisting of just three periods and featuring a reflectance of R ⩾ 99.8% at the center of the stop band are grown by molecular-beam epitaxy on BaF{sub 2} (111) substrates. Single-mode optically pumped vertical-cavity surface-emitting lasers for the 4–5 μm spectral range operating at liquid-nitrogen temperatures are demonstrated.

  8. Performance of a 60-GHz DCM-OFDM and BPSK-Impulse Ultra-Wideband System with Radio-Over-Fiber and Wireless Transmission Employing a Directly-Modulated VCSEL

    DEFF Research Database (Denmark)

    Beltrán, Marta; Jensen, Jesper Bevensee; Yu, Xianbin

    2011-01-01

    The performance of radio-over-fiber optical transmission employing vertical-cavity surface-emitting lasers (VCSELs), and further wireless transmission, of the two major ultra-wideband (UWB) implementations is reported when operating in the 60-GHz radio band. Performance is evaluated at 1.44 Gbit...... in bend-insensitive single-mode fiber with wireless transmission up to 5 m in both cases is demonstrated with no penalty. A simulation analysis has also been performed in order to investigate the operational limits. The analysis results are in excellent agreement with the experimental work and indicate...... good tolerance to chromatic dispersion due to the chirp characteristics of electro-optical conversion when a directly-modulated VCSEL is employed. The performance comparison indicates that BPSK-IR UWB exhibits better tolerance to optical transmission impairments requiring lower received optical power...

  9. Semiconductor laser joint study program with Rome Laboratory

    Science.gov (United States)

    Schaff, William J.; Okeefe, Sean S.; Eastman, Lester F.

    1994-09-01

    A program to jointly study vertical-cavity surface emitting lasers (VCSEL) for high speed vertical optical interconnects (VOI) has been conducted under an ES&E between Rome Laboratory and Cornell University. Lasers were designed, grown, and fabricated at Cornell University. A VCSEL measurement laboratory has been designed, built, and utilized at Rome Laboratory. High quality VCSEL material was grown and characterized by fabricating conventional lateral cavity lasers that emitted at the design wavelength of 1.04 microns. The VCSEL's emit at 1.06 microns. Threshold currents of 16 mA at 4.8 volts were obtained for 30 microns diameter devices. Output powers of 5 mW were measured. This is 500 times higher power than from the light emitting diodes employed previously for vertical optical interconnects. A new form of compositional grading using a cosinusoidal function has been developed and is very successful for reducing diode series resistance for high speed interconnection applications. A flip-chip diamond package compatible with high speed operation of 16 VCSEL elements has been designed and characterized. A flip-chip device binding effort at Rome Laboratory was also designed and initiated. This report presents details of the one-year effort, including process recipes and results.

  10. Ultrahigh speed endoscopic optical coherence tomography using micromotor imaging catheter and VCSEL technology.

    Science.gov (United States)

    Tsai, Tsung-Han; Potsaid, Benjamin; Tao, Yuankai K; Jayaraman, Vijaysekhar; Jiang, James; Heim, Peter J S; Kraus, Martin F; Zhou, Chao; Hornegger, Joachim; Mashimo, Hiroshi; Cable, Alex E; Fujimoto, James G

    2013-07-01

    We developed a micromotor based miniature catheter with an outer diameter of 3.2 mm for ultrahigh speed endoscopic swept source optical coherence tomography (OCT) using a vertical cavity surface-emitting laser (VCSEL) at a 1 MHz axial scan rate. The micromotor can rotate a micro-prism at several hundred frames per second with less than 5 V drive voltage to provide fast and stable scanning, which is not sensitive to the bending of the catheter. The side-viewing probe can be pulled back to acquire a three-dimensional (3D) data set covering a large area on the specimen. The VCSEL provides a high axial scan rate to support dense sampling under high frame rate operation. Using a high speed data acquisition system, in vivo 3D-OCT imaging in the rabbit GI tract and ex vivo imaging of a human colon specimen with 8 μm axial resolution, 8 μm lateral resolution and 1.2 mm depth range in tissue at a frame rate of 400 fps was demonstrated.

  11. Single-Mode VCSELs

    Science.gov (United States)

    Larsson, Anders; Gustavsson, Johan S.

    The only active transverse mode in a truly single-mode VCSEL is the fundamental mode with a near Gaussian field distribution. A single-mode VCSEL produces a light beam of higher spectral purity, higher degree of coherence and lower divergence than a multimode VCSEL and the beam can be more precisely shaped and focused to a smaller spot. Such beam properties are required in many applications. In this chapter, after discussing applications of single-mode VCSELs, we introduce the basics of fields and modes in VCSELs and review designs implemented for single-mode emission from VCSELs in different materials and at different wavelengths. This includes VCSELs that are inherently single-mode as well as inherently multimode VCSELs where higher-order modes are suppressed by mode selective gain or loss. In each case we present the current state-of-the-art and discuss pros and cons. At the end, a specific example with experimental results is provided and, as a summary, the most promising designs based on current technologies are identified.

  12. Thermal wave interference with high-power VCSEL arrays for locating vertically oriented subsurface defects

    Science.gov (United States)

    Thiel, Erik; Kreutzbruck, Marc; Studemund, Taarna; Ziegler, Mathias

    2018-04-01

    Among the photothermal methods, full-field thermal imaging is used to characterize materials, to determine thicknesses of layers, or to find inhomogeneities such as voids or cracks. The use of classical light sources such as flash lamps (impulse heating) or halogen lamps (modulated heating) led to a variety of nondestructive testing methods, in particular, lock-in and flash-thermography. In vertical-cavity surface-emitting lasers (VCSELs), laser light is emitted perpendicularly to the surface with a symmetrical beam profile. Due to the vertical structure, they can be arranged in large arrays of many thousands of individual lasers, which allows power scaling into the kilowatt range. Recently, a high-power yet very compact version of such a VCSEL-array became available that offers both the fast timing behavior of a laser as well as the large illumination area of a lamp. Moreover, it allows a spatial and temporal control of the heating because individual parts of the array can be controlled arbitrarily in frequency, amplitude, and phase. In conjunction with a fast infrared camera, such structured heating opens up a field of novel thermal imaging and testing methods. As a first demonstration of this approach, we chose a testing problem very challenging to conventional thermal infrared testing: The detection of very thin subsurface defects perpendicularly oriented to the surface of metallic samples. First, we generate destructively interfering thermal wave fields, which are then affected by the presence of defects within their reach. It turned out that this technique allows highly sensitive detection of subsurface defects down to depths in excess of the usual thermographic rule of thumb, with no need for a reference or surface preparation.

  13. Wavelength tunable MEMS VCSELs for OCT imaging

    DEFF Research Database (Denmark)

    Sahoo, Hitesh Kumar; Ansbæk, Thor; Ottaviano, Luisa

    2018-01-01

    MEMS VCSELs are one of the most promising swept source (SS) lasers for optical coherence tomography (OCT) and one of the best candidates for future integration with endoscopes, surgical probes and achieving an integrated OCT system. However, the current MEMS-based SS are processed on the III...

  14. Single-mode electrically pumped GaSb-based VCSELs emitting continuous-wave at 2.4 and 2.6 μm

    International Nuclear Information System (INIS)

    Bachmann, Alexander; Arafin, Shamsul; Kashani-Shirazi, Kaveh

    2009-01-01

    Vertical-cavity surface-emitting lasers (VCSELs) are perfect light sources for spectroscopic applications, where properties such as continuous-wave (cw) operation, single-mode emission, high lifetime and often low power consumption are crucial. For applications such as tunable diode laser absorption spectroscopy (TDLAS), there is a growing interest in laser devices emitting in the near- to mid-infrared wavelength range, where many environmentally and technologically important gases show strong absorption lines. The (AlGaIn)(AsSb) material system based on GaSb is the material of choice for covering the 2.0-3.3 μm range. In this paper, we report on electrically pumped single-mode VCSELs with emission wavelengths of 2.4 and 2.6 μm, operating cw at room temperature and beyond. By (electro-) thermal tuning, the emission wavelength can be tuned mode-hop free over a range of several nanometers. In addition, low threshold currents of several milliamperes promise mobile application. In the devices, a structured buried tunnel junction with subsequent overgrowth has been used in order to achieve efficient current confinement, reduced optical losses and increased electrical conductivity. Furthermore, strong optical confinement is introduced in the lasers due to laterally differing cavity lengths.

  15. Time skewing and amplitude nonlinearity mitigation by feedback equalization for 56 Gbps VCSEL-based PAM-4 links

    Science.gov (United States)

    You, Yue; Zhang, Wenjia; Sun, Lin; Du, Jiangbing; Liang, Chenyu; Yang, Fan; He, Zuyuan

    2018-03-01

    The vertical cavity surface emitting laser (VCSEL)-based multimode optical transceivers enabled by pulse amplitude modulation (PAM)-4 will be commercialized in near future to meet the 400-Gbps standard short reach optical interconnects. It is still challenging to achieve over 56/112-Gbps with the multilevel signaling as the multimode property of the device and link would introduce the nonlinear temporal response for the different levels. In this work, we scrutinize the distortions that relates to the multilevel feature of PAM-4 modulation, and propose an effective feedback equalization scheme for 56-Gbps VCSEL-based PAM-4 optical interconnects system to mitigate the distortions caused by eye timing-skew and nonlinear power-dependent noise. Level redistribution at Tx side is theoretically modeled and constructed to achieve equivalent symbol error ratios (SERs) of four levels and improved BER performance. The cause of the eye skewing and the mitigation approach are also simulated at 100-Gbps and experimentally investigated at 56-Gbps. The results indicate more than 2-dB power penalty improvement has been achieved by using such a distortion aware equalizer.

  16. Calibration and Field Deployment of the NSF G-V VCSEL Hygrometer

    Science.gov (United States)

    DiGangi, J. P.; O'Brien, A.; Diao, M.; Hamm, C.; Zhang, Q.; Beaton, S. P.; Zondlo, M. A.

    2012-12-01

    Cloud formation and dynamics have a significant influence on the Earth's radiative forcing budget, which illustrates the importance of clouds with respect to global climate. Therefore, an accurate understanding of the microscale processes dictating cloud formation is crucial for accurate computer modeling of global climate change. A critical tool for understanding these processes from an airborne platform is an instrument capable of measuring water vapor with both high accuracy and time, thus spatial, resolution. Our work focuses on an open-path, compact, vertical-cavity surface-emitting laser (VCSEL) absorption-based hygrometer, capable of 25 Hz temporal resolution, deployed on the NSF/NCAR Gulfstream-V aircraft platform. The open path nature of our instrument also helps to minimize sampling artifacts. We will discuss our efforts toward achieving within 5% accuracy over 5 orders of magnitude of water vapor concentrations. This involves an intercomparison of five independent calibration methods: ice surface saturators using an oil temperature bath, solvent slush baths (e.g. chloroform/LN2, water/ice), a research-grade frost point hygrometer, static pressure experiments, and Pt catalyzed hydrogen gas. This wide variety of available tools allows us to accurately constrain the calibrant water vapor concentrations both before and after the VCSEL hygrometer sampling chamber. For example, the mixing ratio as measured by research-grade frost point hygrometer after the VCSEL hygrometer agreed within 2% of the mixing ration expected from the water/ice bubbler source before the VCSEL over the temperature range -50°C to 20°C. Finally, due to the compact nature of our instrument, we are able to perform these calibrations simultaneously at the same temperatures (-80°C to 30°C) and pressures (150 mbar to 760 mbar) as sampled ambient air during a flight. This higher accuracy can significantly influence the science utilizing this data, which we will illustrate using

  17. Oxide-confined 2D VCSEL arrays for high-density inter/intra-chip interconnects

    Science.gov (United States)

    King, Roger; Michalzik, Rainer; Jung, Christian; Grabherr, Martin; Eberhard, Franz; Jaeger, Roland; Schnitzer, Peter; Ebeling, Karl J.

    1998-04-01

    We have designed and fabricated 4 X 8 vertical-cavity surface-emitting laser (VCSEL) arrays intended to be used as transmitters in short-distance parallel optical interconnects. In order to meet the requirements of 2D, high-speed optical links, each of the 32 laser diodes is supplied with two individual top contacts. The metallization scheme allows flip-chip mounting of the array modules junction-side down on silicon complementary metal oxide semiconductor (CMOS) chips. The optical and electrical characteristics across the arrays with device pitch of 250 micrometers are quite homogeneous. Arrays with 3 micrometers , 6 micrometers and 10 micrometers active diameter lasers have been investigated. The small devices show threshold currents of 600 (mu) A, single-mode output powers as high as 3 mW and maximum wavelength deviations of only 3 nm. The driving characteristics of all arrays are fully compatible to advanced 3.3 V CMOS technology. Using these arrays, we have measured small-signal modulation bandwidths exceeding 10 GHz and transmitted pseudo random data at 8 Gbit/s channel over 500 m graded index multimode fiber. This corresponds to a data transmission rate of 256 Gbit/s per array of 1 X 2 mm2 footprint area.

  18. Vectorial analysis of dielectric photonic crystal VCSEL

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2009-01-01

    A new vertical-cavity surface-emitting laser structure employing a dielectric photonic crystal mirror has been suggested and been numerically investigated. The new structure has a smaller threshold gain, a moderate strength of single-transverse-mode operation, a high quality of emission beam free...

  19. Optical and Electrical Characterization of InGaAsN used for 1.3 µm lasers

    OpenAIRE

    Dumitras, Gheorghe

    2007-01-01

    This work represents a study of the quaternary semiconductor alloy InGaAsN, which is used in quantum-well lasers. The optical part deals with absorption as well as normal and time-resolved photoluminescence. The results of this part are used for the optimization of InGaAsN growth by molecular beam epitaxy for state-of-the-art 1.3 µm Vertical Cavity Surface Emitting Lasers (VCSEL). The influence of the thermal annealing on the optical properties of InGaAsN quantum-wells is examined. By means o...

  20. A 4×8-Gbps VCSEL array driver ASIC and integration with a custom array transmitter module for the LHC front-end transmission

    International Nuclear Information System (INIS)

    Guo, Di; Liu, Chonghan; Chen, Jinghong; Chramowicz, John; Gong, Datao; He, Huiqin; Hou, Suen; Liu, Tiankuan; Prosser, Alan; Teng, Ping-Kun; Xiang, Annie C.; Xiao, Le; Ye, Jingbo

    2016-01-01

    This paper describes the design, fabrication and experiment results of a 4×8-Gbps Vertical-Cavity Surface-Emitting Laser (VCSEL) array driver ASIC with the adjustable active-shunt peaking technique and the novel balanced output structure under the Silicon-on-Sapphire (SOS) process, and a custom array optical transmitter module, featuring a compact size of 10 mm×15 mm×5.3 mm. Both the array driver ASIC and the module have been fully tested after integration as a complete parallel transmitter. Optical eye diagram of each channel passes the eye mask at 8 Gbps/ch with adjacent channel working simultaneously with a power consumption of 150 mW/ch. The optical transmission of Bit-Error Rate (BER) less than 10E-12 is achieved at an aggregated data rate of 4×8-Gbps. - Highlights: • An anode-driven VCSEL Array driver ASIC with the configurable active-shunt peaking technique in pre-driving stages. • A novel full-differential balanced output structure is used to minimize the noise and crosstalk from the power. • A custom array optical transmitter module with custom low-cost reliable alignment method.

  1. A 4×8-Gbps VCSEL array driver ASIC and integration with a custom array transmitter module for the LHC front-end transmission

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Di [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei Anhui 230026 (China); Liu, Chonghan [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Chen, Jinghong [Department of Electrical and Computer Engineering, University of Houston, Houston, TX 77004 (United States); Chramowicz, John [Real-Time Systems Engineering Department, Fermi National Laboratory, Batavia, IL 60510 (United States); Gong, Datao [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); He, Huiqin [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Shenzhen Polytechnic, Shenzhen 518055 (China); Hou, Suen [Institute of Physics, Academia Sinica, Nangang 11529, Taipei, Taiwan (China); Liu, Tiankuan [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Prosser, Alan [Real-Time Systems Engineering Department, Fermi National Laboratory, Batavia, IL 60510 (United States); Teng, Ping-Kun [Institute of Physics, Academia Sinica, Nangang 11529, Taipei, Taiwan (China); Xiang, Annie C. [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Xiao, Le [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Department of Physics, Central China Normal University, Wuhan, Hubei 430079 (China); Ye, Jingbo [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States)

    2016-09-21

    This paper describes the design, fabrication and experiment results of a 4×8-Gbps Vertical-Cavity Surface-Emitting Laser (VCSEL) array driver ASIC with the adjustable active-shunt peaking technique and the novel balanced output structure under the Silicon-on-Sapphire (SOS) process, and a custom array optical transmitter module, featuring a compact size of 10 mm×15 mm×5.3 mm. Both the array driver ASIC and the module have been fully tested after integration as a complete parallel transmitter. Optical eye diagram of each channel passes the eye mask at 8 Gbps/ch with adjacent channel working simultaneously with a power consumption of 150 mW/ch. The optical transmission of Bit-Error Rate (BER) less than 10E-12 is achieved at an aggregated data rate of 4×8-Gbps. - Highlights: • An anode-driven VCSEL Array driver ASIC with the configurable active-shunt peaking technique in pre-driving stages. • A novel full-differential balanced output structure is used to minimize the noise and crosstalk from the power. • A custom array optical transmitter module with custom low-cost reliable alignment method.

  2. VCSELs and silicon light sources exploiting SOI grating mirrors

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2012-01-01

    In this talk, novel vertical-cavity laser structure consisting of a dielectric Bragg reflector, a III-V active region, and a high-index-contrast grating made in the Si layer of a silicon-on-insulator (SOI) wafer will be presented. In the Si light source version of this laser structure, the SOI...... the Bragg reflector. Numerical simulations show that both the silicon light source and the VCSEL exploiting SOI grating mirrors have superior performances, compared to existing silicon light sources and long wavelength VCSELs. These devices are highly adequate for chip-level optical interconnects as well...

  3. Ultrahigh speed endoscopic swept source optical coherence tomography using a VCSEL light source and micromotor catheter

    Science.gov (United States)

    Tsai, Tsung-Han; Ahsen, Osman O.; Lee, Hsiang-Chieh; Liang, Kaicheng; Giacomelli, Michael G.; Potsaid, Benjamin M.; Tao, Yuankai K.; Jayaraman, Vijaysekhar; Kraus, Martin F.; Hornegger, Joachim; Figueiredo, Marisa; Huang, Qin; Mashimo, Hiroshi; Cable, Alex E.; Fujimoto, James G.

    2014-03-01

    We developed an ultrahigh speed endoscopic swept source optical coherence tomography (OCT) system for clinical gastroenterology using a vertical-cavity surface-emitting laser (VCSEL) and micromotor based imaging catheter, which provided an imaging speed of 600 kHz axial scan rate and 8 μm axial resolution in tissue. The micromotor catheter was 3.2 mm in diameter and could be introduced through the 3.7 mm accessory port of an endoscope. Imaging was performed at 400 frames per second with an 8 μm spot size using a pullback to generate volumetric data over 16 mm with a pixel spacing of 5 μm in the longitudinal direction. Three-dimensional OCT (3D-OCT) imaging was performed in patients with a cross section of pathologies undergoing standard upper and lower endoscopy at the Veterans Affairs Boston Healthcare System (VABHS). Patients with Barrett's esophagus, dysplasia, and inflammatory bowel disease were imaged. The use of distally actuated imaging catheters allowed OCT imaging with more flexibility such as volumetric imaging in the terminal ileum and the assessment of the hiatal hernia using retroflex imaging. The high rotational stability of the micromotor enabled 3D volumetric imaging with micron scale volumetric accuracy for both en face and cross-sectional imaging. The ability to perform 3D OCT imaging in the GI tract with microscopic accuracy should enable a wide range of studies to investigate the ability of OCT to detect pathology as well as assess treatment response.

  4. VCSEL-based sensors for distance and velocity

    Science.gov (United States)

    Moench, Holger; Carpaij, Mark; Gerlach, Philipp; Gronenborn, Stephan; Gudde, Ralph; Hellmig, Jochen; Kolb, Johanna; van der Lee, Alexander

    2016-03-01

    VCSEL based sensors can measure distance and velocity in three dimensional space and are already produced in high quantities for professional and consumer applications. Several physical principles are used: VCSELs are applied as infrared illumination for surveillance cameras. High power arrays combined with imaging optics provide a uniform illumination of scenes up to a distance of several hundred meters. Time-of-flight methods use a pulsed VCSEL as light source, either with strong single pulses at low duty cycle or with pulse trains. Because of the sensitivity to background light and the strong decrease of the signal with distance several Watts of laser power are needed at a distance of up to 100m. VCSEL arrays enable power scaling and can provide very short pulses at higher power density. Applications range from extended functions in a smartphone over industrial sensors up to automotive LIDAR for driver assistance and autonomous driving. Self-mixing interference works with coherent laser photons scattered back into the cavity. It is therefore insensitive to environmental light. The method is used to measure target velocity and distance with very high accuracy at distances up to one meter. Single-mode VCSELs with integrated photodiode and grating stabilized polarization enable very compact and cost effective products. Besides the well know application as computer input device new applications with even higher accuracy or for speed over ground measurement in automobiles and up to 250km/h are investigated. All measurement methods exploit the known VCSEL properties like robustness, stability over temperature and the potential for packages with integrated optics and electronics. This makes VCSEL sensors ideally suited for new mass applications in consumer and automotive markets.

  5. The application of cost-effective lasers in coherent UDWDM-OFDM-PON aided by effective phase noise suppression methods.

    Science.gov (United States)

    Liu, Yue; Yang, Chuanchuan; Yang, Feng; Li, Hongbin

    2014-03-24

    Digital coherent passive optical network (PON), especially the coherent orthogonal frequency division multiplexing PON (OFDM-PON), is a strong candidate for the 2nd-stage-next-generation PON (NG-PON2). As is known, OFDM is very sensitive to the laser phase noise which severely limits the application of the cost-effective distributed feedback (DFB) lasers and more energy-efficient vertical cavity surface emitting lasers (VCSEL) in the coherent OFDM-PON. The current long-reach coherent OFDM-PON experiments always choose the expensive external cavity laser (ECL) as the optical source for its narrow linewidth (usuallyOFDM-PON and study the possibility of the application of the DFB lasers and VCSEL in coherent OFDM-PON. A typical long-reach coherent ultra dense wavelength division multiplexing (UDWDM) OFDM-PON has been set up. The numerical results prove that the OBE method can stand severe phase noise of the lasers in this architecture and the DFB lasers as well as VCSEL can be used in coherent OFDM-PON. In this paper, we have also analyzed the performance of the RF-pilot-aided (RFP) phase noise suppression method in coherent OFDM-PON.

  6. Low power consumption O-band VCSEL sources for upstream channels in PON systems

    DEFF Research Database (Denmark)

    Vegas Olmos, Juan José; Rodes Lopez, Roberto; Tafur Monroy, Idelfonso

    2012-01-01

    This paper presents an experimental validation of a low power optical network unit employing vertical-cavity surface-emitting lasers as upstream sources for passive optical networks with an increased power budget, enabling even larger splitting ratios....

  7. High brightness diode lasers controlled by volume Bragg gratings

    Science.gov (United States)

    Glebov, Leonid

    2017-02-01

    Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

  8. VCSELs in short-pulse operation for time-of-flight applications

    Science.gov (United States)

    Moench, Holger; Gronenborn, Stephan; Gu, Xi; Gudde, Ralph; Herper, Markus; Kolb, Johanna; Miller, Michael; Smeets, Michael; Weigl, Alexander

    2018-02-01

    VCSEL arrays are the ideal light source for 3D imaging applications. The narrow emission spectrum and the ability for short pulses make them superior to LEDs. Combined with fast photodiodes or special camera chips spatial information can be obtained which is needed in diverse applications like camera autofocus, indoor navigation, 3D-object recognition, augmented reality or autonomously driving vehicles. Pulse operation at the ns scale and at low duty cycle can work with significantly higher current than traditionally used for VCSELs in continuous wave operation. With reduced thermal limitations at low average heat dissipation very high currents become feasible and tens of Watts output power have been realized with small VCSEL chips. The optical emission pattern of VCSELs can be tailored to the desired field of view using beam shaping elements. Such optical elements also enable laser safe class 1 products. A detailed analysis of the complete system and the operation mode is required to calculate the maximum permitted power for a safe system. The good VCSEL properties like robustness, stability over temperature and the potential for integrated solutions open a huge potential for VCSELs in new mass applications in the consumer and automotive markets.

  9. Semi-automatic characterization and simulation of VCSEL devices for high speed VSR communications

    Science.gov (United States)

    Pellevrault, S.; Toffano, Z.; Destrez, A.; Pez, M.; Quentel, F.

    2006-04-01

    Very short range (VSR) high bit rate optical fiber communications are an emerging market dedicated to local area networks, digital displays or board to board interconnects within real time calculators. In this technology, a very fast way to exchange data with high noise immunity and low-cost is needed. Optical multimode graded index fibers are used here because they have electrical noise immunity and are easier to handle than monomode fibers. 850 nm VCSEL are used in VSR communications because of their low cost, direct on-wafer tests, and the possibility of manufacturing VCSEL arrays very easily compared to classical optical transceivers using edge-emitting laser diodes. Although much research has been carried out in temperature modeling on VCSEL emitters, few studies have been devoted to characterizations over a very broad range of temperatures. Nowadays, VCSEL VSR communications tend to be used in severe environments such as space, avionics and military equipments. Therefore, a simple way to characterize VCSEL emitters over a broad range of temperature is required. In this paper, we propose a complete characterization of the emitter part of 2.5 Gb/s opto-electrical transceiver modules operating from -40°C to +120°C using 850 nm VCSELs. Our method uses simple and semi-automatic measurements of a given set of chosen device parameters in order to make fast and efficient simulations.

  10. 130-nm tunable grating-mirror VCSEL

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2014-01-01

    configuration instead of the extended cavity configuration can bring 130-nm tuning range around 1330-nm wavelength. The air-coupled cavity is known to reduce the quantum confinement factor in VCSELs, increasing threshold. In our air-coupled cavity HCG VCSEL case, the very short power penetration length...... in the HCG minimizes this reduction of the quantum confinement factor, not as significant as in the air-coupled cavity DBR VCSEL....

  11. Injection-locked single-mode VCSEL for orthogonal multiplexing and amplitude noise suppression

    DEFF Research Database (Denmark)

    Chipouline, Arkadi; Lyubopytov, Vladimir S.; Malekizandi, Mohammadreza

    2017-01-01

    It has been shown earlier, that the injection locked semiconductor lasers enable effective amplitude noise suppression [1] and makes possible an extra level of signal multiplexing-orthogonal modulation [2], where DPSK and ASK NRZ channels propagate at the same wavelength [3]. In our work we use...... an injection-locked 1550 nm VCSEL as a slave laser providing separation of amplitude and phase modulations, carrying independent information flows. To validate the possibility of phase modulation extraction by an injection-locked VCSEL, an experimental setup shown in Fig. 1 has been built....

  12. High-Speed, Radiation-Tolerant Laser Drivers in 0.13 $\\mu$m CMOS Technology for HEP Applications

    CERN Document Server

    AUTHOR|(CDS)2073369; Moreira, Paulo; Calvo, Daniela; De Remigis, Paolo; Olantera, Lauri; Soos, Csaba; Troska, Jan; Wyllie, Ken

    2014-01-01

    The gigabit laser driver (GBLD) and low-power GBLD (LpGBLD) are two radiation-tolerant laser drivers designed to drive laser diodes at data rates up to 4.8 Gb/s. They have been designed in the framework of the gigabit-transceiver (GBT) and versatile-link projects to provide fast optical links capable of operation in the radiation environment of future high-luminosity high-energy physics experiments. The GBLD provides laser bias and modulation currents up to 43 mA and 24 mA, respectively. It can thus be used to drive vertical cavity surface emitting laser (VCSEL) and edge-emitting laser diodes. A pre-emphasis circuit, which can provide up to 12 mA in 70 ps pulses, has also been implemented to compensate for high external capacitive loads. The current driving capabilities of the LpGBLD are 2 times smaller that those of the GBLD as it has been optimized to drive VCSELs in order to minimize the power consumption. Both application-specific integrated circuits are designed in 0.13 m commercial complementary metal-o...

  13. Continuous wave and modulation performance of 1550nm band wafer-fused VCSELs with MBE-grown InP-based active region and GaAs-based DBRs

    Science.gov (United States)

    Babichev, A. V.; Karachinsky, L. Ya.; Novikov, I. I.; Gladyshev, A. G.; Mikhailov, S.; Iakovlev, V.; Sirbu, A.; Stepniak, G.; Chorchos, L.; Turkiewicz, J. P.; Agustin, M.; Ledentsov, N. N.; Voropaev, K. O.; Ionov, A. S.; Egorov, A. Yu.

    2017-02-01

    We report for the first time on wafer-fused InGaAs-InP/AlGaAs-GaAs 1550 nm vertical-cavity surface-emitting lasers (VCSELs) incorporating a InAlGaAs/InP MQW active region with re-grown tunnel junction sandwiched between top and bottom undoped AlGaAs/GaAs distributed Bragg reflectors (DBRs) all grown by molecular beam epitaxy. InP-based active region includes seven compressively strained quantum wells (2.8 nm) optimized to provide high differential gain. Devices with this active region demonstrate lasing threshold current 2 mW in the temperature range of 10-70°C. The wall-plug efficiency (WPE) value-reaches 20 %. Lasing spectra show single mode CW operation with a longitudinal side mode suppression ratio (SMSR) up to 45 dB at > 2 mW output power. Small signal modulation response measurements show a 3-dB modulation bandwidth of 9 GHz at pump current of 10 mA and a D-factor value of 3 GHz/(mA)1/2. Open-eye diagram at 30 Gb/s of standard NRZ is demonstrated. Achieved CW and modulation performance is quite sufficient for fiber to the home (FTTH) applications where very large volumes of low-cost lasers are required.

  14. Optimization of self-mixing modulation in VCSELs for sensing applications

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Hvam, Jørn Märcher

    2009-01-01

    Ga1-xAs). The calculations are based on matrix multiplication for calculating effective reflectivity and transmission with external feedback, combined with a logarithmic gain model and standard laser rate equations. To improve the sensitivity towards self-mixing interference in VCSELs by simple...... epitaxial means and this should enable us to e.g. measure smaller bending deflections of cantilever sensors...

  15. Room-temperature continuous-wave operation of the In(Ga)As/GaAs quantum-dot VCSELs for the 1.3 µm optical-fibre communication

    International Nuclear Information System (INIS)

    Xu Dawei; Tong Cunzhu; Yoon, Soon Fatt; Fan Weijun; Zhang, Dao Hua; Wasiak, Michał; Piskorski, Łukasz; Gutowski, Krzysztof; Sarzała, Robert P; Nakwaski, Włodzimierz

    2009-01-01

    Efficient room-temperature (RT) continuous-wave (CW) lasing operation of the 1.3 µm MBE (molecular-beam epitaxy) In(Ga)As/GaAs quantum-dot (QD) top-emitting oxide-confined vertical-cavity surface-emitting diode lasers (VCSELs) for the second-generation optical-fibre communication has been achieved. In their design, a concept of a QD inside a quantum well (QW) has been utilized. The proposed In(Ga)As/GaAs QD active region is composed of five groups of three 8 nm In 0.15 Ga 0.85 As QWs, each containing one InAs QD sheet layer. In each group located close to successive anti-node positions of the optical standing wave within the 3λ cavity, QWs are separated by 32 nm GaAs barriers. Besides, at both active-region edges, additional single InGaAs QWs are located containing single QD layers. For the 10 µm diameter QD VCSELs, the RT CW threshold current of only 6.2 mA (7.9 kA cm −2 ), differential efficiency of 0.11 W A −1 and the maximal output power of 0.85 mW have been recorded. The experimental characteristics are in excellent agreement with theoretical ones obtained using the optical-electrical-thermal-recombination self-consistent computer model. According to this, for the 10 µm devices, the fundamental linearly polarized LP 01 mode remains the dominating one up to the current of 9.1 mA. The lowest RT CW lasing threshold below 5 mA is expected for 6 µm devices

  16. Improvement of kink characteristic of proton-implanted VCSEL with ITO overcoating

    Science.gov (United States)

    Lai, Fang-I.; Chang, Ya-Hsien; Laih, Li-Hong; Kuo, Hao-chung; Wang, S. C.

    2004-06-01

    Proton implanted VCSEL has been demonstrated with good reliability and decent modulation speed up to 1.25 Gb/s. However, kinks in current vs light output (L-I) has been always an issue in the gain-guided proton implant VCSEL. The kink related jitter and noise performance made it difficult to meet 2.5 Gb/s (OC-48) requirement. The kinks in L-I curve can be attributed to non-uniform carrier distribution induced non-uniform gain distribution within emission area. In this paper, the effects of a Ti/ITO transparent over-coating on the proton-implanted AlGaAs/GaAs VCSELs (15um diameter aperture) are investigated. The kinks distribution in L-I characteristics from a 2 inch wafer is greatly improved compared to conventional process. These VCSELs exhibit nearly kink-free L-I output performance with threshold currents ~3 mA, and the slope efficiencies ~ 0.25 W/A. The near-field emission patterns suggest the Ti/ITO over-coating facilitates the current spreading and uniform carrier distribution of the top VCSEL contact thus enhancing the laser performance. Finally, we performed high speed modulation measurement. The eye diagram of proton-implanted VCSELs with Ti/ITO transparent over-coating operating at 2.125 Gb/s with 10mA bias and 9dB extinction ratio shows very clean eye with jitter less than 35 ps.

  17. Continuous-wave Optically Pumped Lasing of Hybrid Perovskite VCSEL at Green Wavelength

    KAUST Repository

    Alias, Mohd Sharizal

    2017-05-08

    We demonstrate the lasing of a perovskite vertical-cavity surface-emitting laser at green wavelengths, which operates under continuous-wave optical pumping at room-temperature by embedding hybrid perovskite between dielectric mirrors deposited at low-temperature.

  18. Continuous-wave Optically Pumped Lasing of Hybrid Perovskite VCSEL at Green Wavelength

    KAUST Repository

    Alias, Mohd Sharizal; Liu, Zhixiong; Alatawi, Abdullah; Ng, Tien Khee; Wu, Tao; Ooi, Boon S.

    2017-01-01

    We demonstrate the lasing of a perovskite vertical-cavity surface-emitting laser at green wavelengths, which operates under continuous-wave optical pumping at room-temperature by embedding hybrid perovskite between dielectric mirrors deposited at low-temperature.

  19. Toward more efficient fabrication of high-density 2-D VCSEL arrays for spatial redundancy and/or multi-level signal communication

    Science.gov (United States)

    Roscher, Hendrik; Gerlach, Philipp; Khan, Faisal Nadeem; Kroner, Andrea; Stach, Martin; Weigl, Alexander; Michalzik, Rainer

    2006-04-01

    We present flip-chip attached high-speed VCSELs in 2-D arrays with record-high intra-cell packing densities. The advances of VCSEL array technology toward improved thermal performance and more efficient fabrication are reviewed, and the introduction of self-aligned features to these devices is pointed out. The structure of close-spaced wedge-shaped VCSELs is discussed and their static and dynamic characteristics are presented including an examination of the modal structure by near-field measurements. The lasers flip-chip bonded to a silicon-based test platform exhibit 3-dB and 10-dB bandwidths of 7.7 GHz and 9.8 GHz, respectively. Open 12.5 Gbit/s two-level eye patterns are demonstrated. We discuss the uses of high packing densities for the increase of the total amount of data throughput an array can deliver in the course of its life. One such approach is to provide up to two backup VCSELs per fiber channel that can extend the lifetimes of parallel transmitters through redundancy of light sources. Another is to increase the information density by using multiple VCSELs per 50 μm core diameter multimode fiber to generate more complex signals. A novel scheme using three butt-coupled VCSELs per fiber for the generation of four-level signals in the optical domain is proposed. First experiments are demonstrated using two VCSELs butt-coupled to the same standard glass fiber, each modulated with two-level signals to produce four-level signals at the photoreceiver. A four-level direct modulation of one VCSEL within a triple of devices produced first 20.6 Gbit/s (10.3 Gsymbols/s) four-level eyes, leaving two VCSELs as backup sources.

  20. A high-energy, low-threshold tunable intracavity terahertz-wave parametric oscillator with surface-emitted configuration

    International Nuclear Information System (INIS)

    Wang, Y Y; Xu, D G; Jiang, H; Zhong, K; Yao, J Q

    2013-01-01

    A high-energy, low-threshold THz-wave output has been experimentally demonstrated with an intracavity terahertz-wave parametric oscillator based on a surface-emitted configuration, which was pumped by a diode-side-pumped Q-switched Nd:YAG laser. Different beam sizes and repetition rates of the pump light have been investigated for high-energy and high-efficiency THz-wave generation. The maximum THz-wave output energy of 283 nJ/pulse was obtained at 1.54 THz under an intracavity 1064 nm pump energy of 59 mJ. The conversion efficiency was 4.8 × 10 −6 , corresponding to a photon conversion efficiency of 0.088%. The pump threshold was 12.9 mJ/pulse. A continuously tunable range from 0.75 to 2.75 THz was realized. (paper)

  1. Numerical methods for modeling photonic-crystal VCSELs

    DEFF Research Database (Denmark)

    Dems, Maciej; Chung, Il-Sug; Nyakas, Peter

    2010-01-01

    We show comparison of four different numerical methods for simulating Photonic-Crystal (PC) VCSELs. We present the theoretical basis behind each method and analyze the differences by studying a benchmark VCSEL structure, where the PC structure penetrates all VCSEL layers, the entire top-mirror DBR...... to the effective index method. The simulation results elucidate the strength and weaknesses of the analyzed methods; and outline the limits of applicability of the different models....

  2. Microfabrication in free-standing gallium nitride using UV laser micromachining

    International Nuclear Information System (INIS)

    Gu, E.; Howard, H.; Conneely, A.; O'Connor, G.M.; Illy, E.K.; Knowles, M.R.H.; Edwards, P.R.; Martin, R.W.; Watson, I.M.; Dawson, M.D.

    2006-01-01

    Gallium nitride (GaN) and related alloys are important semiconductor materials for fabricating novel photonic devices such as ultraviolet (UV) light-emitting diodes (LEDs) and vertical cavity surface-emitting lasers (VCSELs). Recent technical advances have made free-standing GaN substrates available and affordable. However, these materials are strongly resistant to wet chemical etching and also, low etch rates restrict the use of dry etching. Thus, to develop alternative high-resolution processing for these materials is increasingly important. In this paper, we report the fabrication of microstructures in free-standing GaN using pulsed UV lasers. An effective method was first developed to remove the re-deposited materials due to the laser machining. In order to achieve controllable machining and high resolution in GaN, machining parameters were carefully optimised. Under the optimised conditions, precision features such as holes (through holes, blind or tapered holes) on a tens of micrometer length scale have been machined. To fabricate micro-trenches in GaN with vertical sidewalls and a flat bottom, different process strategies of laser machining were tested and optimised. Using this technique, we have successfully fabricated high-quality micro-trenches in free-standing GaN with various widths and depths. The approach combining UV laser micromachining and other processes is also discussed. Our results demonstrate that the pulsed UV laser is a powerful tool for fabricating precision microstructures and devices in gallium nitride

  3. The material system (AlGaIn)(AsSb). Properties and suitability for GaSb based vertical-resonator laser diodes

    International Nuclear Information System (INIS)

    Dier, Oliver

    2008-01-01

    The present thesis studies the particular properties of GaSb-based materials, where they differ from pure arsenides or phosphides, and also the impact of theses properties on long-wavelength vertical-cavity surface-emitting lasers (VCSELs). The goal is the first realisation of an electrically pumped VCSEL with a current aperture in this material system. After the basics, which are necessary for the understanding of the physical effects, the special features of antimony-containing materials are discussed with a focus on topics like band-structure, doping issues and miscibility gaps, which are relevant for devices. A VCSEL-structure optimized for long-wavelength applications is presented using an appropriate description of the device in its optical, electrical and thermal properties. A focus of this work is on the growth of laser-structures by molecular beam epitaxy. Annealing studies on this material showed a good prediction of the final wavelength after the temperature step, which is necessary due to the overgrowth of the tunnel-junction. The full-width at half maximum of the low-temperature photoluminescence signal shows a very low value of 3.95 meV for the quaternary active region. By using the type-II-band alignment of GaSb:Si and InAsSb:Si a low-resistive tunneljunction has been realised. After completion of the device processing a strong electroluminescence outside the DBR stopband and resonant modes within the stopband were found. A linear shift of the emission wavelength with temperature of 0.23 nm/K between -11 C and +30 C was found. (orig.)

  4. 80-nm-tunable high-index-contrast subwavelength grating long-wavelength VCSEL: Proposal and numerical simulations

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper; Sirbu, Alexei

    2010-01-01

    A widely-tunable single-mode long wavelength vertical-cavity surface-emitting laser structure employing a MEMStunable high-index-contrast subwavelength grating (HCG) is suggested and numerically investigated. A very large 80- nm linear tuning range was obtained as the HCG was actuated by -220 to ...

  5. Temperature dependence of 1.55 μm VCSELs

    Science.gov (United States)

    Masum, J.; Balkan, N.; Adams, M. J.

    1998-08-01

    The temperature for minimum threshold carrier concentration in 1.55 μm VCSELs can be significantly lower than that at which the peak gain matches the cavity resonance. A simple model is implemented to investigate the magnitude of this temperature difference and to aid the design of VCSELs for room temperature operation.

  6. 3D finite element simulation of optical modes in VCSELs

    OpenAIRE

    Rozova, M.; Pomplun, J.; Zschiedrich, L.; Schmidt, F.; Burger, S.

    2011-01-01

    We present a finite element method (FEM) solver for computation of optical resonance modes in VCSELs. We perform a convergence study and demonstrate that high accuracies for 3D setups can be attained on standard computers. We also demonstrate simulations of thermo-optical effects in VCSELs.

  7. 100 Gb/s single VCSEL data transmission link

    DEFF Research Database (Denmark)

    Rodes Lopez, Roberto; Estaran Tolosa, Jose Manuel; Li, Bomin

    2012-01-01

    100 Gb/s optical fiber transmission link with a single 1.5 um VCSEL has been experimentally demonstrated using 4-level pulse amplitude modulation.......100 Gb/s optical fiber transmission link with a single 1.5 um VCSEL has been experimentally demonstrated using 4-level pulse amplitude modulation....

  8. High-energy terahertz wave parametric oscillator with a surface-emitted ring-cavity configuration.

    Science.gov (United States)

    Yang, Zhen; Wang, Yuye; Xu, Degang; Xu, Wentao; Duan, Pan; Yan, Chao; Tang, Longhuang; Yao, Jianquan

    2016-05-15

    A surface-emitted ring-cavity terahertz (THz) wave parametric oscillator has been demonstrated for high-energy THz output and fast frequency tuning in a wide frequency range. Through the special optical design with a galvano-optical scanner and four-mirror ring-cavity structure, the maximum THz wave output energy of 12.9 μJ/pulse is achieved at 1.359 THz under the pump energy of 172.8 mJ. The fast THz frequency tuning in the range of 0.7-2.8 THz can be accessed with the step response of 600 μs. Moreover, the maximum THz wave output energy from this configuration is 3.29 times as large as that obtained from the conventional surface-emitted THz wave parametric oscillator with the same experimental conditions.

  9. High-contrast gratings for long-wavelength laser integration on silicon

    Science.gov (United States)

    Sciancalepore, Corrado; Descos, Antoine; Bordel, Damien; Duprez, Hélène; Letartre, Xavier; Menezo, Sylvie; Ben Bakir, Badhise

    2014-02-01

    Silicon photonics is increasingly considered as the most promising way-out to the relentless growth of data traffic in today's telecommunications infrastructures, driving an increase in transmission rates and computing capabilities. This is in fact challenging the intrinsic limit of copper-based, short-reach interconnects and microelectronic circuits in data centers and server architectures to offer enough modulation bandwidth at reasonable power dissipation. In the context of the heterogeneous integration of III-V direct-bandgap materials on silicon, optics with high-contrast metastructures enables the efficient implementation of optical functions such as laser feedback, input/output (I/O) to active/passive components, and optical filtering, while heterogeneous integration of III-V layers provides sufficient optical gain, resulting in silicon-integrated laser sources. The latest ensure reduced packaging costs and reduced footprint for the optical transceivers, a key point for the short reach communications. The invited talk will introduce the audience to the latest breakthroughs concerning the use of high-contrast gratings (HCGs) for the integration of III-V-on-Si verticalcavity surface-emitting lasers (VCSELs) as well as Fabry-Perot edge-emitters (EELs) in the main telecom band around 1.55 μm. The strong near-field mode overlap within HCG mirrors can be exploited to implement unique optical functions such as dense wavelength division multiplexing (DWDM): a 16-λ100-GHz-spaced channels VCSEL array is demonstrated. On the other hand, high fabrication yields obtained via molecular wafer bonding of III-V alloys on silicon-on-insulator (SOI) conjugate excellent device performances with cost-effective high-throughput production, supporting industrial needs for a rapid research-to-market transfer.

  10. The material system (AlGaIn)(AsSb). Properties and suitability for GaSb based vertical-resonator laser diodes; Das Materialsystem (AlGaIn)(AsSb). Eigenschaften und Eignung fuer GaSb-basierte Vertikalresonator-Laserdioden

    Energy Technology Data Exchange (ETDEWEB)

    Dier, Oliver

    2008-07-01

    The present thesis studies the particular properties of GaSb-based materials, where they differ from pure arsenides or phosphides, and also the impact of theses properties on long-wavelength vertical-cavity surface-emitting lasers (VCSELs). The goal is the first realisation of an electrically pumped VCSEL with a current aperture in this material system. After the basics, which are necessary for the understanding of the physical effects, the special features of antimony-containing materials are discussed with a focus on topics like band-structure, doping issues and miscibility gaps, which are relevant for devices. A VCSEL-structure optimized for long-wavelength applications is presented using an appropriate description of the device in its optical, electrical and thermal properties. A focus of this work is on the growth of laser-structures by molecular beam epitaxy. Annealing studies on this material showed a good prediction of the final wavelength after the temperature step, which is necessary due to the overgrowth of the tunnel-junction. The full-width at half maximum of the low-temperature photoluminescence signal shows a very low value of 3.95 meV for the quaternary active region. By using the type-II-band alignment of GaSb:Si and InAsSb:Si a low-resistive tunneljunction has been realised. After completion of the device processing a strong electroluminescence outside the DBR stopband and resonant modes within the stopband were found. A linear shift of the emission wavelength with temperature of 0.23 nm/K between -11 C and +30 C was found. (orig.)

  11. Atomic Interferometry, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Vertical cavity surface emitting lasers (VCSELs) is a new technology which can be used for developing high performance laser components for atom-based sensors...

  12. Bidirectional uncompressed HD video distribution over fiber employing VCSELs

    DEFF Research Database (Denmark)

    Estaran Tolosa, Jose Manuel; Vegas Olmos, Juan José; Rodes, G. A.

    2012-01-01

    We report on a bidirectional system in which VCSELs are simultaneously modulated with two uncompressed HD video signals. The results show a large power budget and a negligible penalty over 10 km long transmission links.......We report on a bidirectional system in which VCSELs are simultaneously modulated with two uncompressed HD video signals. The results show a large power budget and a negligible penalty over 10 km long transmission links....

  13. Terahertz-wave surface-emitted difference-frequency generation without quasi-phase-matching technique.

    Science.gov (United States)

    Avetisyan, Yuri H

    2010-08-01

    A scheme of terahertz (THz)-wave surface-emitted difference-frequency generation (SEDFG), which lacks the drawbacks associated with the usage of periodically orientation-inverted structures, is proposed. It is shown that both material birefringence of the bulk LiNbO(3) crystal and modal birefringence of GaAs/AlAs waveguide are sufficient to obtain SEDFG up to a frequency of approximately 3THz. The simplicity of the proposed scheme, along with the fact that there is a much smaller THz-wave decay in nonlinear crystal, makes it a good candidate for the practical realization of efficient THz generation. The use of a GaAs waveguide with an oxidized AlAs layer is proposed for enhanced THz-wave SEDFG in the vicinity of the GaAs polariton resonance at 8THz.

  14. Strong Exciton-photon Coupling in Semiconductor Microcavities

    DEFF Research Database (Denmark)

    Jensen, Jacob Riis; Borri, Paola; Hvam, Jørn Märcher

    1999-01-01

    The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high directiona......The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high......-optical switches based on semiconductor microcavities....

  15. Experimental Investigations of 3-D-/4-D-CAP Modulation With Directly Modulated VCSELs

    DEFF Research Database (Denmark)

    Binti Othman, Maisara; Zhang, Xu; Deng, Lei

    2012-01-01

    correction limit of 2.8 × 10-3 for error-free reception is achieved after 20 km of SSMF transmission. Spectral efficiencies of 2.68 and 2.08 b/s/Hz are reported for 3-D-CAP and 4-D-CAP, respectively. We believe that multidimensional modulation formats represent an attractive solution for providing more......In this letter, we present experimental investigations of multidimensional multilevel carrierless amplitude phase (CAP) modulation with directly modulated vertical cavity surface-emitting lasers. The signals are transmitted over 20 km of standard single-mode fiber (SSMF). For multilevel 3-D...

  16. Growth of GaAs-based VCSEL/RCE Structures for Optoelectronic Applications via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    A. S. Somintac

    2003-06-01

    Full Text Available High intensity and sharp emission peaks, at light-hole (842 nm and heavy-hole (857 nm excitonic transitionsfor a 90 Å GaAs quantum well (QW were observed for vertical-cavity surface-emitting laser (VCSELstructure. Excellent wavelength selectivity and sensitivity were demonstrated by resonant cavity enhanced(RCE photodetector at 859 nm, corresponding to the energy level of a 95 Å GaAs quantum well.

  17. Vertical electro-absorption modulator design and its integration in a VCSEL

    Science.gov (United States)

    Marigo-Lombart, L.; Calvez, S.; Arnoult, A.; Thienpont, H.; Almuneau, G.; Panajotov, K.

    2018-04-01

    Electro-absorption modulators, either embedded in CMOS technology or integrated with a semiconductor laser, are of high interest for many applications such as optical communications, signal processing and 3D imaging. Recently, the integration of a surface-normal electro-absorption modulator into a vertical-cavity surface-emitting laser has been considered. In this paper we implement a simple quantum well electro-absorption model and design and optimize an asymmetric Fabry-Pérot semiconductor modulator while considering all physical properties within figures of merit. We also extend this model to account for the impact of temperature on the different parameters involved in the calculation of the absorption, such as refractive indices and exciton transition broadening. Two types of vertical modulator structures have been fabricated and experimentally characterized by reflectivity and photocurrent measurements demonstrating a very good agreement with our model. Finally, preliminary results of an electro-absorption modulator vertically integrated with a vertical-cavity surface-emitting laser device are presented, showing good modulation performances required for high speed communications.

  18. VCSEL-based radiation tolerant optical data links

    CERN Document Server

    Gregor, I M; Dowell, J; Jovanovic, P; Kootz, A; Mahout, G; Mandic, I; Weidberg, T

    2000-01-01

    The Large Hadron Collider (LHC) will become operational in 2005 at The European Laboratory for Particle Physics (CERN). The LHC will be the highest energy proton-proton collider in the world. One of the electronic particle detectors which will operate at the LHC is called ATLAS. The environment for electronics placed within ATLAS is extremely hostile due to the high levels of radiation and the general lack of access to components during the expected 10 year lifetime of the experiment. It is planned to use custom radiation tolerant VCSEL- based optical links to transfer data from the ATLAS inner detector to remote data acquisition electronics. A low mass, non-magnetic and radiation tolerant VCSEL packaging has been developed for the most hostile region in the center of ATLAS where the inner detector is located. The performance of the package is reported on. Qualification tests of commercial VCSELs are also described. The VCSELs were irradiated with neutrons (up to 8.10/sup 14/ n(1 MeV)/cm/sup 2/) and annealing...

  19. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  20. True photonic band-gap mode-control in VCSEL structures

    DEFF Research Database (Denmark)

    Romstad, F.; Madsen, M.; Birkedal, Dan

    2003-01-01

    Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect.......Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect....

  1. Progress Toward Measuring CO2 Isotopologue Fluxes in situ with the LLNL Miniature, Laser-based CO2 Sensor

    Science.gov (United States)

    Osuna, J. L.; Bora, M.; Bond, T.

    2015-12-01

    One method to constrain photosynthesis and respiration independently at the ecosystem scale is to measure the fluxes of CO2­ isotopologues. Instrumentation is currently available to makes these measurements but they are generally costly, large, bench-top instruments. Here, we present progress toward developing a laser-based sensor that can be deployed directly to a canopy to passively measure CO2 isotopologue fluxes. In this study, we perform initial proof-of-concept and sensor characterization tests in the laboratory and in the field to demonstrate performance of the Lawrence Livermore National Laboratory (LLNL) tunable diode laser flux sensor. The results shown herein demonstrate measurement of bulk CO2 as a first step toward achieving flux measurements of CO2 isotopologues. The sensor uses a Vertical Cavity Surface Emitting Laser (VCSEL) in the 2012 nm range. The laser is mounted in a multi-pass White Cell. In order to amplify the absorption signal of CO2 in this range we employ wave modulation spectroscopy, introducing an alternating current (AC) bias component where f is the frequency of modulation on the laser drive current in addition to the direct current (DC) emission scanning component. We observed a strong linear relationship (r2 = 0.998 and r2 = 0.978 at all and low CO2 concentrations, respectively) between the 2f signal and the CO2 concentration in the cell across the range of CO2 concentrations relevant for flux measurements. We use this calibration to interpret CO2 concentration of a gas flowing through the White cell in the laboratory and deployed over a grassy field. We will discuss sensor performance in the lab and in situ as well as address steps toward achieving canopy-deployed, passive measurements of CO2 isotopologue fluxes. This work performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344. LLNL-ABS-675788

  2. Study on differences between high contrast grating reflectors for TM and TE polarizations and their impact on VCSEL designs

    DEFF Research Database (Denmark)

    Chung, Il-Sug

    2015-01-01

    -refractive-index media surrounding the HCG. This enables to achieve a very short effective cavity length for VCSELs, which is essential for ultrahigh speed VCSELs and MEMS-tunable VCSELs. The obtained understandings on polarization dependences will be able to serve as important design guidelines for various HCG...

  3. Towards 100 Gbps over 100m MMF using a 850nm VCSEL

    DEFF Research Database (Denmark)

    Iglesias Olmedo, Miguel; Tatarczak, Anna; Zuo, Tianjian

    2014-01-01

    Employing MultiCAP signaling, successful 70.4 Gbps transmission over 100m of OM3 MMF using off-the-shelf 850 nm VCSEL with 10.1 GHz 3-dB bandwidth is experimentally demonstrated indicating the feasibility of achieving 100 Gbps with a single 25 GHz VCSEL. © 2014 OSA....

  4. Applications of Gunn lasers

    Science.gov (United States)

    Balkan, N.; Chung, S. H.

    2008-04-01

    The principle of the operation of a Gunn laser is based on the band to band recombination of impact ionized non-equilibrium electron-hole pairs in propagating high field space-charge domains in a Gunn diode, which is biased above the negative differential resistance threshold and placed in a Fabry-Perot or a vertical micro cavity (VCSEL). In conventional VCSEL structures, unless specific measures such as the addition of oxide apertures and use of small windows are employed, the lack of uniformity in the density of current injected into the active region can reduce the efficiency and delay the lasing threshold. In a vertical-cavity structured Gunn device, however, the current is uniformly injected into the active region independently of the distributed Bragg reflector (DBR) layers. Therefore, lasing occurs from the entire surface of the device. The light emission from Gunn domains is an electric field induced effect. Therefore, the operation of Gunn-VCSEL or F-P laser is independent of the polarity of the applied voltage. Red-NIR VCSELs emitting in the range of 630-850 nm are also possible when Ga 1-xAl xAs (x communications. Furthermore the device may find applications as an optical clock and cross link between microwave and NIR communications. The operation of a both Gunn-Fabry-Perot laser and Gunn-VCSEL has been demonstrated by us recently. In the current work we present the potential results of experimental and theoretical studies concerning the applications together with the gain and emission characteristics of Gunn-Lasers.

  5. Volumetric cutaneous microangiography of human skin in vivo by VCSEL swept-source optical coherence tomography

    Energy Technology Data Exchange (ETDEWEB)

    Woo June Choi; Wang, R K [University of Washington, Department of Bioengineering, Seattle, Washington 98195 (United States)

    2014-08-31

    We demonstrate volumetric cutaneous microangiography of the human skin in vivo that utilises 1.3-μm high-speed sweptsource optical coherence tomography (SS-OCT). The swept source is based on a micro-electro-mechanical (MEMS)-tunable vertical cavity surface emission laser (VCSEL) that is advantageous in terms of long coherence length over 50 mm and 100 nm spectral bandwidth, which enables the visualisation of microstructures within a few mm from the skin surface. We show that the skin microvasculature can be delineated in 3D SS-OCT images using ultrahigh-sensitive optical microangiography (UHS-OMAG) with a correlation mapping mask, providing a contrast enhanced blood perfusion map with capillary flow sensitivity. 3D microangiograms of a healthy human finger are shown with distinct cutaneous vessel architectures from different dermal layers and even within hypodermis. These findings suggest that the OCT microangiography could be a beneficial biomedical assay to assess cutaneous vascular functions in clinic. (laser biophotonics)

  6. Volumetric cutaneous microangiography of human skin in vivo by VCSEL swept-source optical coherence tomography

    International Nuclear Information System (INIS)

    Woo June Choi; Wang, R K

    2014-01-01

    We demonstrate volumetric cutaneous microangiography of the human skin in vivo that utilises 1.3-μm high-speed sweptsource optical coherence tomography (SS-OCT). The swept source is based on a micro-electro-mechanical (MEMS)-tunable vertical cavity surface emission laser (VCSEL) that is advantageous in terms of long coherence length over 50 mm and 100 nm spectral bandwidth, which enables the visualisation of microstructures within a few mm from the skin surface. We show that the skin microvasculature can be delineated in 3D SS-OCT images using ultrahigh-sensitive optical microangiography (UHS-OMAG) with a correlation mapping mask, providing a contrast enhanced blood perfusion map with capillary flow sensitivity. 3D microangiograms of a healthy human finger are shown with distinct cutaneous vessel architectures from different dermal layers and even within hypodermis. These findings suggest that the OCT microangiography could be a beneficial biomedical assay to assess cutaneous vascular functions in clinic. (laser biophotonics)

  7. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  8. Long-term vacuum tests of single-mode vertical cavity surface emitting laser diodes used for a scalar magnetometer

    Science.gov (United States)

    Hagen, C.; Ellmeier, M.; Piris, J.; Lammegger, R.; Jernej, I.; Magnes, W.; Murphy, E.; Pollinger, A.; Erd, C.; Baumjohann, W.

    2017-11-01

    Scalar magnetometers measure the magnitude of the magnetic field, while vector magnetometers (mostly fluxgate magnetometers) produce three-component outputs proportional to the magnitude and the direction of the magnetic field. While scalar magnetometers have a high accuracy, vector magnetometers suffer from parameter drifts and need to be calibrated during flight. In some cases, full science return can only be achieved by a combination of vector and scalar magnetometers.

  9. Reliability and degradation of oxide VCSELs due to reaction to atmospheric water vapor

    Science.gov (United States)

    Dafinca, Alexandru; Weidberg, Anthony R.; McMahon, Steven J.; Grillo, Alexander A.; Farthouat, Philippe; Ziolkowski, Michael; Herrick, Robert W.

    2013-03-01

    850nm oxide-aperture VCSELs are susceptible to premature failure if operated while exposed to atmospheric water vapor, and not protected by hermetic packaging. The ATLAS detector in CERN's Large Hadron Collider (LHC) has had approximately 6000 channels of Parallel Optic VCSELs fielded under well-documented ambient conditions. Exact time-to-failure data has been collected on this large sample, providing for the first time actual failure data at use conditions. In addition, the same VCSELs were tested under a variety of accelerated conditions to allow us to construct a more accurate acceleration model. Failure analysis information will also be presented to show what we believe causes corrosion-related failure for such VCSELs.

  10. Amplitude Noise Suppression and Orthogonal Multiplexing Using Injection-Locked Single-Mode VCSEL

    DEFF Research Database (Denmark)

    Lyubopytov, Vladimir; von Lerber, Tuomo; Lassas, Matti

    2017-01-01

    We experimentally demonstrate BER reduction and orthogonal modulation using an injection locked single-mode VCSEL. It allows us suppressing an amplitude noise of optical signal and/or double the capacity of an information channel.......We experimentally demonstrate BER reduction and orthogonal modulation using an injection locked single-mode VCSEL. It allows us suppressing an amplitude noise of optical signal and/or double the capacity of an information channel....

  11. Vers l'intégration monolithique d'une micro-optique active en polymère sur VCELs

    OpenAIRE

    Reig , Benjamin

    2011-01-01

    This thesis deals with the study and the development of novel polymer MOEMS (Micro Optical Electrical Mechanical Systems) for Vertical-Cavity Surface-Emitting Lasers (VCSELs) passive and active beam shaping. To improve the photonic integration of these compact laser sources in optical communication and detection systems (sensors, biomedical analysis), we have designed and fabricated a polymer-based microsystem suitable for a monolithic integration on VCSELs. It includes a refractive microlens...

  12. 1-W quasi-cw near-diffraction-limited semiconductor laser pumped optically by a fibre-coupled diode bar

    OpenAIRE

    Dhanjal, S.; Hoogland, S.; Roberts, J.S.; Hayward, R.A.; Clarkson, W.A.; Tropper, Anne

    2000-01-01

    We describe a diode-bar-pumped vertical-external-cavity surface-emitting semiconductor laser, which in quasi-cw operation emitted a peak power of >1 W at 1020 nm in a circular, near diffraction-limited beam.

  13. All-VCSEL based digital coherent detection link for multi Gbit/s WDM passive optical networks

    DEFF Research Database (Denmark)

    Rodes Lopez, Roberto; Jensen, Jesper Bevensee; Zibar, Darko

    2010-01-01

    with record receiver sensitivity of -36 dBm after transmission over 40 km standard single mode fiber. Digital signal processing compensates for frequency offset between the transmitter and the local oscillator VCSELs, and for chromatic dispersion. This system allows for uncooled VCSEL operation and fully...

  14. Comparing 52 Gbps Duobinary and 4-PAM Transmission Over 100m OM-3 Fiber With 25GHz Class VCSELs

    DEFF Research Database (Denmark)

    Suhr, Lau Frejstrup; Lyubomirsky, Ilya; Daghighian, Henry M.

    This paper compares VCSEL based transmission of 52 Gbps duobinary-NRZ and 4-PAM over 100m OM-3 fiber employing a linear equalizer in the receiver.......This paper compares VCSEL based transmission of 52 Gbps duobinary-NRZ and 4-PAM over 100m OM-3 fiber employing a linear equalizer in the receiver....

  15. High phase noise tolerant pilot-tone-aided DP-QPSK optical communication systems

    DEFF Research Database (Denmark)

    Zhang, Xu; Pang, Xiaodan; Deng, Lei

    2012-01-01

    In this paper we experimentally demonstrate a novel, high phase-noise tolerant, optical dual polarization (DP) quadrature phase-shift keying (QPSK) communication system based on pilot-tone-aided phase noise cancellation (PNC) algorithm. Vertical cavity surface emitting lasers (VCSELs) with approx......In this paper we experimentally demonstrate a novel, high phase-noise tolerant, optical dual polarization (DP) quadrature phase-shift keying (QPSK) communication system based on pilot-tone-aided phase noise cancellation (PNC) algorithm. Vertical cavity surface emitting lasers (VCSELs...

  16. Determination of gas temperature and thermometric species in inductively coupled plasmas by emission and diode laser absorption

    International Nuclear Information System (INIS)

    Bol'shakov, Alexander A; Cruden, Brett A; Sharma, Surendra P

    2004-01-01

    A vertical cavity surface-emitting laser diode (VCSEL) was used as a spectrally tunable emission source for measurements of the radial-integrated gas temperature inside an inductively coupled plasma reactor. The data were obtained by profiling the Doppler-broadened absorption of metastable Ar atoms at 763.51 nm in argon and argon/nitrogen plasmas (3%, 45%, and 90% N 2 in Ar) at pressures of 0.5-70 Pa and inductive powers of 100 and 300 W. The results were compared to the rotational temperature derived from the N 2 emission at the (0,0) vibrational transition of the C 3 Π u -B 3 Π g system. The differences in integrated rotational and Doppler temperatures were attributed to non-uniform spatial distributions of both temperature and thermometric species (Ar * and N 2 *) that varied depending on the conditions. A two-dimensional, three-temperature fluid plasma simulation was employed to explain these differences. This work should facilitate further development of a miniature sensor for non-intrusive acquisition of data (temperature and densities of multiple plasma species) during micro- and nano-fabrication plasma processing, thus enabling diagnostic-assisted continuous optimization and advanced control over the processes. Such sensors would also enable us to track the origins and pathways of damaging contaminants, thereby providing real-time feedback for adjustment of processes. Our work serves as an example of how two line-of-sight integrated temperatures derived from different thermometric species make it possible to characterize the radial non-uniformity of the plasma

  17. Determination of gas temperature and thermometric species in inductively coupled plasmas by emission and diode laser absorption

    Energy Technology Data Exchange (ETDEWEB)

    Bol' shakov, Alexander A; Cruden, Brett A; Sharma, Surendra P [NASA Ames Research Center, Moffett Field, CA 94035 (United States)

    2004-11-01

    A vertical cavity surface-emitting laser diode (VCSEL) was used as a spectrally tunable emission source for measurements of the radial-integrated gas temperature inside an inductively coupled plasma reactor. The data were obtained by profiling the Doppler-broadened absorption of metastable Ar atoms at 763.51 nm in argon and argon/nitrogen plasmas (3%, 45%, and 90% N{sub 2} in Ar) at pressures of 0.5-70 Pa and inductive powers of 100 and 300 W. The results were compared to the rotational temperature derived from the N{sub 2} emission at the (0,0) vibrational transition of the C {sup 3}{pi}{sub u}-B {sup 3}{pi} {sub g} system. The differences in integrated rotational and Doppler temperatures were attributed to non-uniform spatial distributions of both temperature and thermometric species (Ar{sup *} and N{sub 2}*) that varied depending on the conditions. A two-dimensional, three-temperature fluid plasma simulation was employed to explain these differences. This work should facilitate further development of a miniature sensor for non-intrusive acquisition of data (temperature and densities of multiple plasma species) during micro- and nano-fabrication plasma processing, thus enabling diagnostic-assisted continuous optimization and advanced control over the processes. Such sensors would also enable us to track the origins and pathways of damaging contaminants, thereby providing real-time feedback for adjustment of processes. Our work serves as an example of how two line-of-sight integrated temperatures derived from different thermometric species make it possible to characterize the radial non-uniformity of the plasma.

  18. Real time 1.55 μm VCSEL-based coherent detection link

    DEFF Research Database (Denmark)

    Rodes Lopez, Roberto; Parekh, D.; Jensen, Jesper Bevensee

    2012-01-01

    This paper presents an experimental demonstration of VCSEL-based PON with simplified real-time coherent receiver at 2.5 Gbps. Receiver sensitivity of −37 dBm is achieved proving splitting ratio up to 2048 after 17 km fiber transmission.......This paper presents an experimental demonstration of VCSEL-based PON with simplified real-time coherent receiver at 2.5 Gbps. Receiver sensitivity of −37 dBm is achieved proving splitting ratio up to 2048 after 17 km fiber transmission....

  19. Coherent Detection for 1550 nm, 5 Gbit/s VCSEL Based 40 km Bidirectional PON Transmission

    DEFF Research Database (Denmark)

    Jensen, Jesper Bevensee; Rodes Lopez, Roberto; Zibar, Darko

    2011-01-01

    Coherent detection of directly modulated 1550nm VCSELs in 5Gbit/s bidirectional 40km SSMF PON-links is presented. Receiver sensitivity of –37.3dBm after transmission is achieved with 30dB system margin, corresponding to 1:1024 passive powersplitting.......Coherent detection of directly modulated 1550nm VCSELs in 5Gbit/s bidirectional 40km SSMF PON-links is presented. Receiver sensitivity of –37.3dBm after transmission is achieved with 30dB system margin, corresponding to 1:1024 passive powersplitting....

  20. Half-cycle QAM modulation for VCSEL-based optical links

    DEFF Research Database (Denmark)

    Pham, Tien Thang; Rodes Lopez, Roberto; Jensen, Jesper Bevensee

    2012-01-01

    Abstract (40-Word Limit): Novel spectrally efficient half-cycle QAM modulation is experimentally demonstrated. 10 Gbps 4-QAM signal in 7.5-GHz bandwidth was successfully transmitted over 20 km SMF using an un-cooled 1.5 µm VCSEL with no equalization applied.......Abstract (40-Word Limit): Novel spectrally efficient half-cycle QAM modulation is experimentally demonstrated. 10 Gbps 4-QAM signal in 7.5-GHz bandwidth was successfully transmitted over 20 km SMF using an un-cooled 1.5 µm VCSEL with no equalization applied....

  1. VCSEL sources for optical fiber-wireless composite data links at 60GHz

    DEFF Research Database (Denmark)

    Vegas Olmos, Juan José; Pang, Xiaodan; Lebedev, Alexander

    2013-01-01

    This paper presents a performance assessment of 60-GHz mm-wave signal generation using photonic upconversion employing a VCSEL as source. The system reaches 10−9 BER over a variety of optical fibers for data rates of 1.25-Gbit/s.......This paper presents a performance assessment of 60-GHz mm-wave signal generation using photonic upconversion employing a VCSEL as source. The system reaches 10−9 BER over a variety of optical fibers for data rates of 1.25-Gbit/s....

  2. Mode selection laser

    DEFF Research Database (Denmark)

    2014-01-01

    spatial reflector variations, may be combined to generate a laser beam containing a plurality of orthogonal modes. The laser beam may be injected into a few- mode optical fiber, e.g. for the purpose of optical communication. The VCSEL may have intra-cavity contacts (31,37) and a Tunnel junction (33......) for current confinement into the active layer (34). An air-gap layer (102) may be provided between the upper reflector (15) and the SOI wafer (50) acting as a substrate. The lower reflector may be designed as a high-contrast grating (51) by etching....

  3. SC-FDE for MMF short reach optical interconnects using directly modulated 850 nm VCSELs

    DEFF Research Database (Denmark)

    Teichmann, Victor S. C.; Barreto, Andre N.; Pham, Tien Thang

    2012-01-01

    We propose the use of single-carrier frequency-domain equalization (SC-FDE) for the compensation of modal dispersion in short distance optical links using multimode fibers and 850 nm VCSELs. By post-processing of experimental data, we demonstrate, at 7.9% overhead, the error-free transmission (ov...

  4. Diagnostic and characterization of the VCSEL diodes based on GaSb

    Czech Academy of Sciences Publication Activity Database

    Matulková, Irena; Cihelka, Jaroslav; Vyskočil, Jan; Zelinger, Zdeněk; Hulicius, Eduard; Šimeček, Tomislav; Civiš, Svatopluk

    2010-01-01

    Roč. 99, 1-2 (2010), s. 333-338 ISSN 0946-2171 R&D Projects: GA AV ČR IAA400400705 Institutional research plan: CEZ:AV0Z40400503; CEZ:AV0Z10100521 Keywords : VCSEL diode s * FTIR * GaSb Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.239, year: 2010

  5. MIMO-OFDM WDM PON with DM-VCSEL for femtocells application

    DEFF Research Database (Denmark)

    Binti Othman, Maisara; Deng, Lei; Pang, Xiaodan

    2011-01-01

    We report on experimental demonstration of 2x2 MIMO-OFDM 5.6-GHz radio over fiber signaling over 20 km WDM-PON with directly modulated (DM) VCSELs for femtocells application. MIMO-OFDM algorithms effectively compensate for impairments in the wireless link. Error-free signal demodulation of 64...

  6. 10 Gb/s Real-Time All-VCSEL Low Complexity Coherent scheme for PONs

    DEFF Research Database (Denmark)

    Rodes Lopez, Roberto; Cheng, Ning; Jensen, Jesper Bevensee

    2012-01-01

    Real time demodulation of a 10 Gb/s all-VCSEL based coherent PON link with a simplified coherent receiver scheme is demonstrated. Receiver sensitivity of −33 dBm is achieved providing high splitting ratio and link reach....

  7. Energy-efficient VCSEL-based multiGigabit IR-UWB over Fiber with Airlink Transmission System

    DEFF Research Database (Denmark)

    Rodes Lopez, Roberto; Pham, Tien Thang; Jensen, Jesper Bevensee

    2010-01-01

    We propose VCSEL based impulse-radio ultrawideband technology for energy efficient high-speed wireless networks; with full passive signal distribution, from the central office to the home with high-speed wireless connection to the final user.......We propose VCSEL based impulse-radio ultrawideband technology for energy efficient high-speed wireless networks; with full passive signal distribution, from the central office to the home with high-speed wireless connection to the final user....

  8. 8-dimensional lattice optimized formats in 25-GBaud/s VCSEL based IM/DD optical interconnections

    DEFF Research Database (Denmark)

    Lu, Xiaofeng; Tafur Monroy, Idelfonso

    2015-01-01

    Temporally combined 4- and 8-dimensional lattice grids optimized modulation formats for VCSEL based IM/DD short-reach optical inter-connections has been proposed and investigated numerically together with its conventional counterpart PAM-4. © 2015 OSA.......Temporally combined 4- and 8-dimensional lattice grids optimized modulation formats for VCSEL based IM/DD short-reach optical inter-connections has been proposed and investigated numerically together with its conventional counterpart PAM-4. © 2015 OSA....

  9. Full C-band Tunable MEMS-VCSEL for Next Generation G.metro Mobile Front- and Backhauling

    DEFF Research Database (Denmark)

    Wagner, Christoph; Zou, Shihuan Jim; Ortsiefer, Markus

    2017-01-01

    We report full C-band tunable, 10 Gbit/s capability, directly modulated MEMS-VCSEL for next generation converged mobile fronthaul and backhaul applications. Bit error rates below 10(-9) were achieved over up to 40 km SSMF.......We report full C-band tunable, 10 Gbit/s capability, directly modulated MEMS-VCSEL for next generation converged mobile fronthaul and backhaul applications. Bit error rates below 10(-9) were achieved over up to 40 km SSMF....

  10. 107.5 Gb/s 850 nm multi- and single-mode VCSEL transmission over 10 and 100 m of multi-mode fiber

    DEFF Research Database (Denmark)

    Puerta Ramírez, Rafael; Agustin, M.; Chorchos, L.

    2016-01-01

    First time successful 107.5 Gb/s MultiCAP 850 nm OM4 MMF transmissions over 10 m with multi-mode VCSEL and up to 100 m with single-mode VCSEL are demonstrated, with BER below 7% overhead FEC limit measured for each case.......First time successful 107.5 Gb/s MultiCAP 850 nm OM4 MMF transmissions over 10 m with multi-mode VCSEL and up to 100 m with single-mode VCSEL are demonstrated, with BER below 7% overhead FEC limit measured for each case....

  11. Characterization of 850nm-15μm GaAs/AlGaAs quantum-well ...

    African Journals Online (AJOL)

    In this report, operating characteristics and performance of 15μm diameter vertical cavity surface emitting lasers (VCSELs) emitting at 850nm and fabricated by gas source molecular beam-epitaxy (GSMBE) is presented. The device characterisation is performed by observing the continuous wave (cw) operation under room ...

  12. Experimental Demonstration of 84 Gb/s PAM-4 Over up to 1.6 km SSMF Using a 20-GHz VCSEL at 1525 nm

    DEFF Research Database (Denmark)

    Eiselt, Nicklas; Griesser, Helmut; Wei, Jinlong

    2017-01-01

    We demonstrate 84-Gb/s four-level pulse amplitude modulation (PAM-4) over up to 1.6-km standard single mode fiber using a 20-GHz single mode short cavity vertical cavity surface emitting laser diode at a transmission wavelength of 1525 nm. Different equalizer approaches including a common...... feedforward equalizer, a nonlinear Volterra equalizer (NLVE), a maximum likelihood sequence estimator (MLSE) and their combinations are evaluated working either as an equalizer for a standard PAM-4 or a partial response PAM-4 signal with seven levels. It is demonstrated that a standard FFE is not enough...... for a transmission distance of >0.6 km, while the use of an NLVE or FFE + MLSE is able to improve the transmission distance towards 1 km. The use of partial-response PAM-4 FFE in combination with a short memory MLSE is able to efficiently equalize the bandwidth limitations, showing more than 10-times BER improvement...

  13. Investigation of the Static and Dynamic Characteristics for a Wafer-Fused C-band VCSEL in the Mode of the Optical-Electric Converter

    Science.gov (United States)

    Belkin, M. E.

    2018-01-01

    The results of an experimental study for a long wavelength vertical cavity surface-emitting laser of a wafer-fused construction as an effective resonant cavity enhanced photodetector of analog optical signals are described. The device is of interest for a number of promising microwave photonics applications and for creation of a low-cost photoreceiver in a high-speed fiber optics telecommunication system with dense wavelength division multiplexing. The schematic of the testbed, the original technique allowing to calculate the passband of the built-in optical cavity, and the results of measuring dark current, current responsivity, amplitude- and phase-frequency characteristics during the process of photo-detection are demonstrated.

  14. Experimental coherent control of lasers

    International Nuclear Information System (INIS)

    Gordon, R.; Ramsay, A.J.; Cleaver, J.R.A.; Heberle, A.P.

    2002-01-01

    We experimentally demonstrate coherent control of a laser. A resonant 100-fs optical pulse is injected into a vertical cavity surface emitting laser to introduce a field component with well-defined phase and thereby excite beating oscillations between the transverse lasing modes. By changing the relative phase between two injected pulses, we can enhance or destroy the beating oscillations and select which lasing modes are excited. We discuss resonant pulse injection into lasers and show how mode competition improves controllability by suppressing the phase-sensitive effects of the carriers

  15. Dielectric structures with bound modes for microcavity lasers

    NARCIS (Netherlands)

    Visser, P.M.; Allaart, K.; Lenstra, D.

    2002-01-01

    Cavity modes of dielectric microsphcres and vertical cavity surface emitting lasers, in spite of their high Q, are never exactly bound, but have a finite width due to leakage at the borders. We propose types of microstructures that sustain three-dimensionally bound modes of the radiation field when

  16. Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene

    Science.gov (United States)

    2015-07-16

    catalyzed on either a copper foil or on nickel coated substrates. The graphene must be transferred off of these substrates and then on to the DBR/spacer to...properties of graphene in both the exfoliated single layer graphene (SLG) and few layer graphene (FLG) flakes . Sun et al. make use of bile salts to...semiconductors and dielectrics is the transfer of CVD graphene grown on copper foils. The graphene is grown on thin Cu-foils by CVD using methane and

  17. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  18. Sub-cycle QAM modulation for VCSEL-based optical fiber links

    DEFF Research Database (Denmark)

    Pham, Tien-Thang; Rodes Lopez, Roberto; Jensen, Jesper Bevensee

    2013-01-01

    QAM modulation utilizing subcarrier frequency lower than the symbol rate is both theoretically and experimentally investigated. High spectral efficiency and concentration of power in low frequencies make sub-cycle QAM signals attractive for optical fiber links with direct modulated light sources....... Real-time generated 10-Gbps 4-level QAM signal in a 7.5-GHz bandwidth utilizing subcarrier frequency at a half symbol rate was successfully transmitted over 20-km SMF using an un-cooled 1.5-μm VCSEL. Only 2.5-dB fiber transmission power penalty was observed with no equalization applied....

  19. Multi-longitudinal-mode micro-laser model

    Science.gov (United States)

    Staliunas, Kestutis

    2017-10-01

    We derive a convenient model for broad aperture micro-lasers, such as microchip lasers, broad area semiconductor lasers, or VCSELs, taking into account several longitudinal mode families. We provide linear stability analysis, and show characteristic spatio-temporal dynamics in such multi-longitudinal mode laser models. Moreover, we derive the coupled mode model in the presence of intracavity refraction index modulation (intracavity photonic crystal). Contribution to the Topical Issue "Theory and Applications of the Lugiato-Lefever Equation", edited by Yanne K. Chembo, Damia Gomila, Mustapha Tlidi, Curtis R. Menyuk.

  20. Lasers

    CERN Document Server

    Milonni, Peter W

    1988-01-01

    A comprehensive introduction to the operating principles and applications of lasers. Explains basic principles, including the necessary elements of classical and quantum physics. Provides concise discussions of various laser types including gas, solid state, semiconductor, and free electron lasers, as well as of laser resonators, diffraction, optical coherence, and many applications including holography, phase conjugation, wave mixing, and nonlinear optics. Incorporates many intuitive explanations and practical examples. Discussions are self-contained in a consistent notation and in a style that should appeal to physicists, chemists, optical scientists and engineers.

  1. Low power laser driver design in 28nm CMOS for on-chip and chip-to-chip optical interconnect

    Science.gov (United States)

    Belfiore, Guido; Szilagyi, Laszlo; Henker, Ronny; Ellinger, Frank

    2015-09-01

    This paper discusses the challenges and the trade-offs in the design of laser drivers for very-short distance optical communications. A prototype integrated circuit is designed and fabricated in 28 nm super-low-power CMOS technology. The power consumption of the transmitter is 17.2 mW excluding the VCSEL that in our test has a DC power consumption of 10 mW. The active area of the driver is only 0.0045 mm2. The driver can achieve an error-free (BER < 10 -12) electrical data-rate of 25 Gbit/s using a pseudo random bit sequence of 27 -1. When the driver is connected to the VCSEL module an open optical eye is reported at 15 Gbit/s. In the tested bias point the VCSEL module has a measured bandwidth of 10.7 GHz.

  2. A top-down design methodology and its implementation for VCSEL-based optical links design

    Science.gov (United States)

    Li, Jiguang; Cao, Mingcui; Cai, Zilong

    2005-01-01

    In order to find the optimal design for a given specification of an optical communication link, an integrated simulation of electronic, optoelectronic, and optical components of a complete system is required. It is very important to be able to simulate at both system level and detailed model level. This kind of model is feasible due to the high potential of Verilog-AMS language. In this paper, we propose an effective top-down design methodology and employ it in the development of a complete VCSEL-based optical links simulation. The principle of top-down methodology is that the development would proceed from the system to device level. To design a hierarchical model for VCSEL based optical links, the design framework is organized in three levels of hierarchy. The models are developed, and implemented in Verilog-AMS. Therefore, the model parameters are fitted to measured data. A sample transient simulation demonstrates the functioning of our implementation. Suggestions for future directions in top-down methodology used for optoelectronic systems technology are also presented.

  3. Active inductor shunt peaking in high-speed VCSEL driver design

    CERN Document Server

    Liang, Futian; Hou, Suen; Liu, Chonghan; Liu, Tiankuan; Su, Da-Shung; Teng, Ping-Kun; Xiang, Annie; Ye, Jingbo; Jin, Ge

    2013-01-01

    An all transistor active inductor shunt peaking structure has been used in a prototype of 8-Gbps high-speed VCSEL driver which is designed for the optical link in ATLAS liquid Argon calorimeter upgrade. The VCSEL driver is fabricated in a commercial 0.25-um Silicon-on-Sapphire (SoS) CMOS process for radiation tolerant purpose. The all transistor active inductor shunt peaking is used to overcome the bandwidth limitation from the CMOS process. The peaking structure has the same peaking effect as the passive one, but takes a small area, does not need linear resistors and can overcome the process variation by adjust the peaking strength via an external control. The design has been tapped out, and the prototype has been proofed by the preliminary electrical test results and bit error ratio test results. The driver achieves 8-Gbps data rate as simulated with the peaking. We present the all transistor active inductor shunt peaking structure, simulation and test results in this paper.

  4. VCSEL-based gigabit impulse radio UWB for converged wireless sensor and communication in-building networks

    DEFF Research Database (Denmark)

    Gibbon, Timothy Braidwood; Pham, Tien Thang; Neumeyr, C.

    2010-01-01

    A 1550nm VCSEL-generated UWB signal is used for simultaneous 2Gb/s wireless data transfer and to measuring the rotational speed of a blade spinning between 18-29Hz, with up to 50km distribution over single mode fibre....

  5. Eight dimensional optimized modulation for IM-DD 56 Gbit/s optical interconnections using 850 nm vcsels

    DEFF Research Database (Denmark)

    Lu, Xiaofeng; Tatarczak, Anna; Tafur Monroy, Idelfonso

    2016-01-01

    A novel 8-dimensional optimized modulation format is designed and compared with PAM-n in a 28-GBd 850 nm VCSEL based IM-DD system, enabling the transmission on 100GBASE-SR4 FEC threshold over various 100 m MMF links....

  6. In-building Unlicensed WiFi Band OFDM Signal Distribution over MMF&BIF Using VCSEL

    DEFF Research Database (Denmark)

    Deng, Lei; Jensen, Jesper Bevensee; Yu, Xianbin

    2011-01-01

    For in-building applications, an OFDM-VCSEL RoF system operating in unlicensed WiFi band is experimentally tested using MMF and bend insensitive fiber (BIF). A spectral efficiency of 4.32 bit/s/Hz with 0.9 Gbps data rate is achieved....

  7. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2013-01-01

    This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

  8. Experimental Analysis of 60-GHz VCSEL and ECL Photonic Generation and Transmission of Impulse-Radio Ultra-Wideband Signals

    DEFF Research Database (Denmark)

    Beltran, Marta; Jensen, Jesper Bevensee; Llorente, Roberto

    2011-01-01

    for comparison purposes. Real-time bit-error-rate (BER) performance of generated signals at 3.125 Gb/s is evaluated combining fiber and 2-m wireless transmission. Different optical fiber types including 1-km bend-insensitive single-mode fiber and 20-km nonzero dispersion-shifted fiber is evaluated. $\\hbox......{BER} for the ECL and $\\hbox{BER} for the VCSEL requiring higher received optical power than the ECL is demonstrated employing electrical power detection....

  9. VCSEL-based gigabit IR-UWB link for converged communication and sensing applications in optical metro-access networks

    DEFF Research Database (Denmark)

    Pham, Tien Thang; Gibbon, Timothy Braidwood; Tafur Monroy, Idelfonso

    2012-01-01

    We report on experimental demonstration of an impulse radio ultrawideband (IR-UWB) based converged communication and sensing system. A 1550-nm VCSEL-generated IR-UWB signal is used for 2-Gbps wireless data distribution over 800-m and 50-km single mode fiber links which present short-range in-buil...... application, paving the way forward for the development and deployment of converged UWB VCSEL-based technologies in access and in-building networks of the future.......We report on experimental demonstration of an impulse radio ultrawideband (IR-UWB) based converged communication and sensing system. A 1550-nm VCSEL-generated IR-UWB signal is used for 2-Gbps wireless data distribution over 800-m and 50-km single mode fiber links which present short-range in......-building and long-reach access network applications. The IR-UWB signal is also used to simultaneously measure the rotational speed of a blade spinning between 18 and 30 Hz. To the best of our knowledge, this is the very first demonstration of a simultaneous gigabit UWB telecommunication and wireless UWB sensing...

  10. Radiation-hard/high-speed parallel optical links

    Energy Technology Data Exchange (ETDEWEB)

    Gan, K.K., E-mail: gan@mps.ohio-state.edu [Department of Physics, The Ohio State University, Columbus, OH 43210 (United States); Buchholz, P.; Heidbrink, S. [Fachbereich Physik, Universität Siegen, Siegen (Germany); Kagan, H.P.; Kass, R.D.; Moore, J.; Smith, D.S. [Department of Physics, The Ohio State University, Columbus, OH 43210 (United States); Vogt, M.; Ziolkowski, M. [Fachbereich Physik, Universität Siegen, Siegen (Germany)

    2016-09-21

    We have designed and fabricated a compact parallel optical engine for transmitting data at 5 Gb/s. The device consists of a 4-channel ASIC driving a VCSEL (Vertical Cavity Surface Emitting Laser) array in an optical package. The ASIC is designed using only core transistors in a 65 nm CMOS process to enhance the radiation-hardness. The ASIC contains an 8-bit DAC to control the bias and modulation currents of the individual channels in the VCSEL array. The performance of the optical engine up at 5 Gb/s is satisfactory.

  11. The miniature optical transmitter and transceiver for the High-Luminosity LHC (HL-LHC) experiments

    International Nuclear Information System (INIS)

    Liu, C; Zhao, X; Deng, B; Gong, D; Guo, D; Li, X; Liang, F; Liu, G; Liu, T; Xiang, A C; Ye, J; Chen, J; Huang, D; Hou, S; Teng, P-K

    2013-01-01

    We present the design and test results of the Miniature optical Transmitter (MTx) and Transceiver (MTRx) for the high luminosity LHC (HL-LHC) experiments. MTx and MTRx are Transmitter Optical Subassembly (TOSA) and Receiver Optical Subassembly (ROSA) based. There are two major developments: the Vertical Cavity Surface Emitting Laser (VCSEL) driver ASIC LOCld and the mechanical latch that provides the connection to fibers. In this paper, we concentrate on the justification of this work, the design of the latch and the test results of these two modules with a Commercial Off-The-Shelf (COTS) VCSEL driver

  12. Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Xue, Weiqi; Taghizadeh, Alireza

    2015-01-01

    into the waveguide integrated with the laser. This laser has the advantages of long-wavelength vertical-cavity surface-emitting lasers, such as low threshold and high side-mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS compatible processes. It has......We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light...

  13. VCSEL Transmission at 10 Gb/s for 20 km Single Mode Fiber WDM-PON without Dispersion Compensation or Injection Locking

    DEFF Research Database (Denmark)

    Gibbon, Timothy Braidwood; Prince, Kamau; Pham, Tien Thang

    2011-01-01

    how off-center wavelength filtering of the VCSEL spectrum at an array waveguide grating can be used to mitigate the effect of chirp and the dispersion penalty. Transmission at 10Gb/s VCSEL over 23.6 km of single mode fiber is experimentally demonstrated, with a dispersion penalty of only 2.9 d......B. Simulated results are also presented which show that off-center wavelength filtering can extend the 10 Gb/s network reach from 11.7 km to 25.8 km for a 4 dB dispersion penalty. This allows for cheap and simple dispersion mitigation in next generation VCSEL based optical access networks....

  14. Comparison of 850-nm and 1550-nm VCSELs for low-cost short-reach IM/DD and OFDM SMF/MMF links

    DEFF Research Database (Denmark)

    Karinou, Fotini; Deng, Lei; Rodes Lopez, Roberto

    2013-01-01

    In this paper, we experimentally compare the suitability of two VCSEL designs of different wavelength and technology as inexpensive, off-the-shelf transmitter components to enable low-cost and energy-efficient optical interconnects employing conventional (NRZ IM/DD) and advanced (OFDM) modulation....... In particular, we assess the performance of a multimode (MM) 850-nm and a single-mode (SM) 1550-nm VCSEL over 100 m/1 km of 50.7-μm diameter OM-4 MMF links and 100 m/5 km SMF links. OFDM-QPSK is investigated in order to substitute IM/DD in order to increase the capacity in the aforementioned VCSEL-based, MMF...

  15. Quad 14Gbps L-Band VCSEL-based System for WDM Migration of 4-lanes 56 Gbps Optical Data Links

    DEFF Research Database (Denmark)

    Estaran Tolosa, Jose Manuel; Rodes Lopez, Roberto; Pham, Tien Thang

    2012-01-01

    We report on migrating multiple lane link into a single WDM L-band VCSEL-based system. Experimental validation successfully achieves 10 km of SMF reach with 4x14Gbps and less than 0.5dB inter-channel crosstalk penalty.......We report on migrating multiple lane link into a single WDM L-band VCSEL-based system. Experimental validation successfully achieves 10 km of SMF reach with 4x14Gbps and less than 0.5dB inter-channel crosstalk penalty....

  16. 24-Dimensional Modulation Formats for 100 Gbit/s IM-DD Transmission Systems Using 850 nm Single-Mode VCSEL

    DEFF Research Database (Denmark)

    Lu, Xiaofeng; Lyubopytov, Vladimir; Tafur Monroy, Idelfonso

    2017-01-01

    Twenty-four dimensional modulation format with 2 bit/symbol spectrum efficiency is proposed and investigated in an up to 100 Gbit/s VCSEL-based IM-DD transmission system with respect to the channel bandwidth and the power budget.......Twenty-four dimensional modulation format with 2 bit/symbol spectrum efficiency is proposed and investigated in an up to 100 Gbit/s VCSEL-based IM-DD transmission system with respect to the channel bandwidth and the power budget....

  17. IM/DD vs. 4-PAM Using a 1550-nm VCSEL over Short-Range SMF/MMF Links for Optical Interconnects

    DEFF Research Database (Denmark)

    Karinou, Fotini; Rodes Lopez, Roberto; Prince, Kamau

    2013-01-01

    We experimentally compare the performance of 10.9-Gb/s IM/DD and 5-GBd 4-PAM modulation formats over 5-km SMF and 1-km MMF links, employing a commercially-available 1550-nm VCSEL as an enabling technology for use in optical interconnects.......We experimentally compare the performance of 10.9-Gb/s IM/DD and 5-GBd 4-PAM modulation formats over 5-km SMF and 1-km MMF links, employing a commercially-available 1550-nm VCSEL as an enabling technology for use in optical interconnects....

  18. Performance analysis of communication links based on VCSEL and silicon photonics technology for high-capacity data-intensive scenario.

    Science.gov (United States)

    Boletti, A; Boffi, P; Martelli, P; Ferrario, M; Martinelli, M

    2015-01-26

    To face the increased demand for bandwidth, cost-effectiveness and simplicity of future Ethernet data communications, a comparison between two different solutions based on directly-modulated VCSEL sources and Silicon Photonics technologies is carried out. Also by exploiting 4-PAM modulation, the transmission of 50-Gb/s and beyond capacity per channel is analyzed by means of BER performance. Applications for optical backplane, very short reach and in case of client-optics networks and intra and inter massive data centers communications (up to 10 km) are taken into account. A comparative analysis based on the power consumption is also proposed.

  19. Metasurface external cavity laser

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Luyao, E-mail: luyaoxu.ee@ucla.edu; Curwen, Christopher A.; Williams, Benjamin S. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); California NanoSystems Institute, University of California, Los Angeles, California 90095 (United States); Hon, Philip W. C.; Itoh, Tatsuo [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Chen, Qi-Sheng [Northrop Grumman Aerospace Systems, Redondo Beach, California 90278 (United States)

    2015-11-30

    A vertical-external-cavity surface-emitting-laser is demonstrated in the terahertz range, which is based upon an amplifying metasurface reflector composed of a sub-wavelength array of antenna-coupled quantum-cascade sub-cavities. Lasing is possible when the metasurface reflector is placed into a low-loss external cavity such that the external cavity—not the sub-cavities—determines the beam properties. A near-Gaussian beam of 4.3° × 5.1° divergence is observed and an output power level >5 mW is achieved. The polarized response of the metasurface allows the use of a wire-grid polarizer as an output coupler that is continuously tunable.

  20. 56 Gb/s DMT transmission with VCSELs in 1.5 um wavelength range over up to 12 km for DWDM intra-data center connects

    DEFF Research Database (Denmark)

    Dochhan, Annika; Eiselt, Nicklas; Hohenleitner, Robert

    2016-01-01

    We demonstrate up to 12 km, 56 Gb/s DMT transmission using high-speed VCSELs in the 1.5 um wavelength range for future 400Gb/s intra-data center connects, enabled by vestigial sideband filtering of the transmit signal....

  1. Quad 14 Gbps L-band VCSEL-based system for WDM migration of 4-lanes 56 Gbps optical data links

    DEFF Research Database (Denmark)

    Estaran Tolosa, Jose Manuel; Rodes Lopez, Roberto; Pham, Tien Thang

    2012-01-01

    We report on migrating multiple-lane link into an L-band VCSEL-based WDM system. Experimental validation achieves successful transmission over 10 km of SMF at 4x14Gbps. Inter-channel crosstalk penalty is observed to be less than 0.5 dB and a transmission penalty around 1 dB. The power budget margin...

  2. Cascade laser applications: trends and challenges

    Science.gov (United States)

    d'Humières, B.; Margoto, Éric; Fazilleau, Yves

    2016-03-01

    When analyses need rapid measurements, cost effective monitoring and miniaturization, tunable semiconductor lasers can be very good sources. Indeed, applications like on-field environmental gas analysis or in-line industrial process control are becoming available thanks to the advantage of tunable semiconductor lasers. Advances in cascade lasers (CL) are revolutionizing Mid-IR spectroscopy with two alternatives: interband cascade lasers (ICL) in the 3-6μm spectrum and quantum cascade lasers (QCL), with more power from 3 to 300μm. The market is getting mature with strong players for driving applications like industry, environment, life science or transports. CL are not the only Mid-IR laser source. In fact, a strong competition is now taking place with other technologies like: OPO, VCSEL, Solid State lasers, Gas, SC Infrared or fiber lasers. In other words, CL have to conquer a share of the Mid-IR application market. Our study is a market analysis of CL technologies and their applications. It shows that improvements of components performance, along with the progress of infrared laser spectroscopy will drive the CL market growth. We compare CL technologies with other Mid-IR sources and estimate their share in each application market.

  3. Coupled Photonic Crystal Cavity Array Laser

    DEFF Research Database (Denmark)

    Schubert, Martin

    in the quadratic lattice. Processing techniques are developed and optimized in order fabricate photonic crystals membranes in gallium arsenide with quantum dots as gain medium and in indium gallium arsenide phosphide with quantum wells as gain medium. Several key issues in process to ensure good quality....... The results are in good agreement with standard coupled mode theory. Also a novel type of photonic crystal structure is proposed called lambda shifted cavity which is a twodimensional photonic crystal laser analog of a VCSEL laser. Detailed measurements of the coupled modes in the photonic crystals...... with quantum dots are carried out. In agreement with a simple gain model the structures do not show stimulated emission. The spectral splitting due to the coupling between single cavities as well as arrays of cavities is studied theoretically and experimentally. Lasing is observed for photonic crystal cavity...

  4. Study of a low power dissipation, miniature laser-pumped rubidium frequency standard

    Institute of Scientific and Technical Information of China (English)

    Liu Guo-Bin; Zhao Feng; Gu Si-Hong

    2009-01-01

    This paper studies a miniature low power consumption laser-pumped atom vapour cell clock scheme. Pumping 87Rb with a vertical cavity surface emitting laser diode pump and locking the laser frequency on a Doppler-broadened spectral line,it records a 5×10-11τ-1/2 (τ<500 s) frequency stability with a table-top system in a primary experiment.The study reveals that the evaluated scheme is at the level of 2.7 watts power consumption,90 cm3 volume and 10-12τ- 1/2 short-term frequency stability.

  5. Long-wavelength photonic integrated circuits and avalanche photodetectors

    Science.gov (United States)

    Tsou, Yi-Jen D.; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

    2001-10-01

    Fast-growing internet traffic volume require high data communication bandwidth over longer distances. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low-cost, high-speed laser modules at 1310 to 1550 nm wavelengths and avalanche photodetectors are required. The great success of GaAs 850nm VCSEls for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits (PICs), which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform of InP-based PICs compatible with surface-emitting laser technology, as well as a high data rate externally modulated laser module. Avalanche photodetectors (APDs) are the key component in the receiver to achieve high data rate over long transmission distance because of their high sensitivity and large gain- bandwidth product. We have used wafer fusion technology to achieve In

  6. InP-based three-dimensional photonic integrated circuits

    Science.gov (United States)

    Tsou, Diana; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

    2001-10-01

    Fast-growing internet traffic volumes require high data communication bandwidth over longer distances than short wavelength (850 nm) multi-mode fiber systems can provide. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low cost, high-speed laser modules at 1310 and 1550 nm wavelengths are required. The great success of GaAs 850 nm VCSELs for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with available intrinsic materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits, which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits (PICs) have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform for fabricating InP-based photonic integrated circuits compatible with surface-emitting laser technology. Employing InP transparency at 1310 and 1550 nm wavelengths, we have created 3-D photonic integrated circuits (PICs) by utilizing light beams in both surface normal and in-plane directions within the InP-based structure

  7. Polarization Properties of Laser Solitons

    Directory of Open Access Journals (Sweden)

    Pedro Rodriguez

    2017-04-01

    Full Text Available The objective of this paper is to summarize the results obtained for the state of polarization in the emission of a vertical-cavity surface-emitting laser with frequency-selective feedback added. We start our research with the single soliton; this situation presents two perpendicular main orientations, connected by a hysteresis loop. In addition, we also find the formation of a ring-shaped intensity distribution, the vortex state, that shows two homogeneous states of polarization with very close values to those found in the soliton. For both cases above, the study shows the spatially resolved value of the orientation angle. It is important to also remark the appearance of a non-negligible amount of circular light that gives vectorial character to all the different emissions investigated.

  8. High brightness diode-pumped organic solid-state laser

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Zhuang; Mhibik, Oussama; Nafa, Malik; Chénais, Sébastien; Forget, Sébastien, E-mail: sebastien.forget@univ-paris13.fr [Université Paris 13, Sorbonne Paris Cité, Laboratoire de Physique des Lasers, F-93430, Villetaneuse (France); CNRS, UMR 7538, LPL, F-93430, Villetaneuse (France)

    2015-02-02

    High-power, diffraction-limited organic solid-state laser operation has been achieved in a vertical external cavity surface-emitting organic laser (VECSOL), pumped by a low-cost compact blue laser diode. The diode-pumped VECSOLs were demonstrated with various dyes in a polymer matrix, leading to laser emissions from 540 nm to 660 nm. Optimization of both the pump pulse duration and output coupling leads to a pump slope efficiency of 11% for a DCM based VECSOLs. We report output pulse energy up to 280 nJ with 100 ns long pump pulses, leading to a peak power of 3.5 W in a circularly symmetric, diffraction-limited beam.

  9. Miniaturised optical sensors for industrial applications

    DEFF Research Database (Denmark)

    Jakobsen, Michael Linde; Hanson, Steen Grüner

    2010-01-01

    . The technology is based on compact and low-cost laser sources such as Vertical Cavity Surface Emitting Lasers (VCSELs). The methods characterise the object motion by speckle translation in the near field (imaging) or far field (optical Fourier transform) by optical spatial filtering velocimetry. The volume...... of the two optical solutions is less than 1 cm3, including the application specific integrated circuit (ASIC), which processes the data and interfaces a PC/Laptop directly via a USB driver. The sensors are designed for working distances of 2 and 12 mm for near field and far field, respectively. We...

  10. Comparison of PAM and CAP modulations robustness against mode partition noise in optical links

    Science.gov (United States)

    Stepniak, Grzegorz

    2017-08-01

    Mode partition noise (MPN) of the laser employed at the transmitter can significantly degrade the transmission performance. In the paper, we introduce a simulation model of MPN in vertical cavity surface emitting laser (VCSEL) and simulate transmission of pulse amplitude modulation (PAM) and carrierless amplitude phase (CAP) signals in multimode fiber (MMF) link. By turning off other effects, like relative intensity noise (RIN), we focus solely on the influence of MPN on transmission performance degradation. Robustness of modulation and equalization type against MPN is studied.

  11. A CMOS 0.13 mu m, 5-Gb/s laser driver for high energy physics applications

    CERN Document Server

    Mazza, G; Moreira, P; Rivetti, A; Soos, C; Troska, J; Wyllie, K

    2012-01-01

    The GigaBit Laser Driver (GBLD) is a radiation tolerant ASIC designed to drive both edge emitting lasers and VCSELs at data rates up to 5 Gb/s. It is part of the GigaBit Transceiver (GBT) and Versatile Link projects, which are designing a bi-directional optical data transmission system capable of operating in the radiation environment of a typical HEP experiment. The GBLD can provide laser diode modulation currents up to 24 mA and laser bias currents up to 43 mA. Pre- and de-emphasis functions are implemented to compensate for high external capacitive loads and asymmetric laser response. The chip, designed in a 0.13 $\\mu$m CMOS technology, is powered by a single 2.5 V power supply and can be programmed via an $I2C$ interface.

  12. Oxygen measurement by multimode diode lasers employing gas correlation spectroscopy.

    Science.gov (United States)

    Lou, Xiutao; Somesfalean, Gabriel; Chen, Bin; Zhang, Zhiguo

    2009-02-10

    Multimode diode laser (MDL)-based correlation spectroscopy (COSPEC) was used to measure oxygen in ambient air, thereby employing a diode laser (DL) having an emission spectrum that overlaps the oxygen absorption lines of the A band. A sensitivity of 700 ppm m was achieved with good accuracy (2%) and linearity (R(2)=0.999). For comparison, measurements of ambient oxygen were also performed by tunable DL absorption spectroscopy (TDLAS) technique employing a vertical cavity surface emitting laser. We demonstrate that, despite slightly degraded sensitivity, the MDL-based COSPEC-based oxygen sensor has the advantages of high stability, low cost, ease-of-use, and relaxed requirements in component selection and instrument buildup compared with the TDLAS-based instrument.

  13. Fundamentals of metasurface lasers based on resonant dark states

    International Nuclear Information System (INIS)

    Droulias, Sotiris; Technology - Hellas; Jain, Aditya; Koschny, Thomas; Soukoulis, Costas M.; Technology - Hellas; Ames Laboratory and Iowa State University, Ames, IA

    2017-01-01

    Recently, our group proposed a metamaterial laser design based on explicitly coupled dark resonant states in low-loss dielectrics, which conceptually separates the gain-coupled resonant photonic state responsible for macroscopic stimulated emission from the coupling to specific free-space propagating modes, allowing independent adjustment of the lasing state and its coherent radiation output. Due to this functionality, it is now possible to make lasers that can overcome the trade-off between system dimensions and Q factor, especially for surface emitting lasers with deeply subwavelength thickness. In this paper, we give a detailed discussion of the key functionality and benefits of this design, such as radiation damping tunability, directionality, subwavelength integration, and simple layer-by-layer fabrication. Finally, we examine in detail the fundamental design tradeoffs that establish the principle of operation and must be taken into account and give guidance for realistic implementations.

  14. Experimental demonstration of 56 Gbit/s PAM-4 over 15 km and 84 Gbit/s PAM-4 over 1 km SSMF at 1525 nm using a 25G VCSEL

    DEFF Research Database (Denmark)

    Eiselt, Nicklas; Griesser, Helmut; Wei, Jinlong

    2016-01-01

    Record 28-GBd PAM-4 transmission over 15 km SSMF and 42-GBd PAM-4 over 1 km SSMF using a low-power 25G VCSEL are demonstrated at 1525 nm without optical dispersion compensation and only simple transceiver DSPs....

  15. 32 x 16 CMOS smart pixel array for optical interconnects

    Science.gov (United States)

    Kim, Jongwoo; Guilfoyle, Peter S.; Stone, Richard V.; Hessenbruch, John M.; Choquette, Kent D.; Kiamilev, Fouad E.

    2000-05-01

    Free space optical interconnects can increase throughput capacities and eliminate much of the energy consumption required for `all electronic' systems. High speed optical interconnects can be achieved by integrating optoelectronic devices with conventional electronics. Smart pixel arrays have been developed which use optical interconnects. An individual smart pixel cell is composed of a vertical cavity surface emitting laser (VCSEL), a photodetector, an optical receiver, a laser driver, and digital logic circuitry. Oxide-confined VCSELs are being developed to operate at 850 nm with a threshold current of approximately 1 mA. Multiple quantum well photodetectors are being fabricated from AlGaAs for use with the 850 nm VCSELs. The VCSELs and photodetectors are being integrated with complementary metal oxide semiconductor (CMOS) circuitry using flip-chip bonding. CMOS circuitry is being integrated with a 32 X 16 smart pixel array. The 512 smart pixels are serially linked. Thus, an entire data stream may be clocked through the chip and output electrically by the last pixel. Electrical testing is being performed on the CMOS smart pixel array. Using an on-chip pseudo random number generator, a digital data sequence was cycled through the chip verifying operation of the digital circuitry. Although, the prototype chip was fabricated in 1.2 micrometers technology, simulations have demonstrated that the array can operate at 1 Gb/s per pixel using 0.5 micrometers technology.

  16. Lasers '89

    International Nuclear Information System (INIS)

    Harris, D.G.; Shay, T.M.

    1990-01-01

    This book covers the following topics: XUV, X-Ray and Gamma-Ray Lasers, excimer lasers, chemical lasers, nuclear pumped lasers, high power gas lasers, solid state lasers, laser spectroscopy. The paper presented include: Development of KrF lasers for fusion and Nuclear driven solid-state lasers

  17. Fiber-optic link components for maintenance tasks in thermonuclear fusion environments

    International Nuclear Information System (INIS)

    Van Uffelen, M.; Nowodzinski, A.; Jucker, Ph.; Berghmans, F.; Brichard, B.; Vos, F.; Decreton, M.

    1999-01-01

    While standard single mode fibers proved their relative durability against radiation, our results indicate that specific rad-hard fibers can be mostly beneficial when exposed to doses exceeding the kGy-level. Gamma irradiations of multimode VCSELs (vertical cavity surface-emitting laser) confirmed their excellent radiation tolerance and thermal stability. However, particular care should be taken about the packaging, as severe degradation of focusing lenses can seriously limit the available optical power. Further experiments are planned and should complete these first results. (authors)

  18. Digital Photonic Receivers for Wireless and Wireline Optical Fiber Transmission Links

    DEFF Research Database (Denmark)

    Guerrero Gonzalez, Neil

    services. The experimental demonstration supported the following transmissions systems: a baseband, 5 Gbps, intensity modulation system employing a directly modulated vertical cavity surface emitting laser (VCSEL), a baseband 20 Gbps non-return-to-zero quadrature phase-shift keying (NRZ-QPSK) system...... receivers in hybrid wireless and wireline optical fiber transmission links. Furthermore, the digital signal processing framework presented in this thesis can be extended to design probabilistic-based digital photonic receivers that can find applications in cognitive heterogeneous reconfigurable optical...

  19. 4 Gbps Impulse Radio (IR) Ultra-Wideband (UWB) Transmission over 100 Meters Multi Mode Fiber with 4 Meters Wireless Transmission

    DEFF Research Database (Denmark)

    Jensen, Jesper Bevensee; Rodes Lopez, Roberto; Caballero Jambrina, Antonio

    2009-01-01

    We present experimental demonstrations of in-building impulse radio (IR) ultra-wideband (UWB) link consisting of 100 m multi mode fiber (MMF) and 4 m wireless transmission at a record 4 Gbps, and a record 8 m wireless transmission at 2.5 Gbps. A directly modulated vertical cavity surface emitting...... laser (VCSEL) was used for the generation of the optical signal. 8 m at 2.5 Gbps corresponds to a bit rate - distance product of 20; the highest yet reported for wireless IR-UWB transmission...

  20. System tests of radiation hard optical links for the ATLAS semiconductor tracker

    International Nuclear Information System (INIS)

    Charlton, D.G.; Dowell, J.D.; Homer, R.J.; Jovanovic, P.; Kenyon, I.R.; Mahout, G.; Shaylor, H.R.; Wilson, J.A.; Rudge, A.; Fopma, J.; Mandic, I.; Nickerson, R.B.; Shield, P.; Wastie, R.; Weidberg, A.R.; Eek, L.-O.; Go, A.; Lund-Jensen, B.; Pearce, M.; Soederqvist, J.; Morrissey, M.; White, D.J.

    2000-01-01

    A prototype optical data and Timing, Trigger and Control transmission system based on LEDs and PIN-diodes has been constructed. The system would be suitable in terms of radiation hardness and radiation length for use in the ATLAS SemiConductor Tracker. Bit error rate measurements were performed for the data links and for the links distributing the Timing, Trigger and Control data from the counting room to the front-end modules. The effects of cross-talk between the emitters and receivers were investigated. The advantages of using Vertical Cavity Surface Emitting Lasers (VCSELs) instead of LEDs are discussed

  1. Key techniques for space-based solar pumped semiconductor lasers

    Science.gov (United States)

    He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

    2014-12-01

    In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

  2. High-Capacity Short-Range Optical Communication Links

    DEFF Research Database (Denmark)

    Tatarczak, Anna

    Over the last decade, we have observed a tremendous spread of end-user mobile devices. The user base of a mobile application can grow or shrink by millions per day. This situation creates a pressing need for highly scalable server infrastructure; a need nowadays satisfied through cloud computing...... offered by data centers. As the popularity of cloud computing soars, the demand for high-speed, short-range data center links grows. Vertical cavity surface emitting lasers (VCSEL) and multimode fibers (MMF) prove especially well-suited for such scenarios. VCSELs have high modulation bandwidths......, we achieve 10 Gbps over 400 m and then conrm the approach in an optimized system at 25 Gbps over 300 m. The techniques described in this thesis leverage additional degrees of freedom to better utilize the available resources of short-range links. The proposed schemes enable higher speeds and longer...

  3. A full-duplex working integrated optoelectronic device for optical interconnect

    Science.gov (United States)

    Liu, Kai; Fan, Huize; Huang, Yongqing; Duan, Xiaofeng; Wang, Qi; Ren, Xiaomin; Wei, Qi; Cai, Shiwei

    2018-05-01

    In this paper, a full-duplex working integrated optoelectronic device is proposed. It is constructed by integrating a vertical cavity surface emitting laser (VCSEL) unit above a resonant cavity enhanced photodetector (RCE-PD) unit. Analysis shows that, the VCSEL unit has a threshold current of 1 mA and a slop efficiency of 0.66 W/A at 849.7 nm, the RCE-PD unit obtains its maximal absorption quantum efficiency of 90.24% at 811 nm with a FWHM of 4 nm. Moreover, the two units of the proposed integrated device can work independently from each other. So that the proposed integrated optoelectronic device can work full-duplex. It can be applied for single fiber bidirectional optical interconnects system.

  4. Photonic quasi-crystal terahertz lasers

    Science.gov (United States)

    Vitiello, Miriam Serena; Nobile, Michele; Ronzani, Alberto; Tredicucci, Alessandro; Castellano, Fabrizio; Talora, Valerio; Li, Lianhe; Linfield, Edmund H.; Davies, A. Giles

    2014-12-01

    Quasi-crystal structures do not present a full spatial periodicity but are nevertheless constructed starting from deterministic generation rules. When made of different dielectric materials, they often possess fascinating optical properties, which lie between those of periodic photonic crystals and those of a random arrangement of scatterers. Indeed, they can support extended band-like states with pseudogaps in the energy spectrum, but lacking translational invariance, they also intrinsically feature a pattern of ‘defects’, which can give rise to critically localized modes confined in space, similar to Anderson modes in random structures. If used as laser resonators, photonic quasi-crystals open up design possibilities that are simply not possible in a conventional periodic photonic crystal. In this letter, we exploit the concept of a 2D photonic quasi crystal in an electrically injected laser; specifically, we pattern the top surface of a terahertz quantum-cascade laser with a Penrose tiling of pentagonal rotational symmetry, reaching 0.1-0.2% wall-plug efficiencies and 65 mW peak output powers with characteristic surface-emitting conical beam profiles, result of the rich quasi-crystal Fourier spectrum.

  5. Laser Technology.

    Science.gov (United States)

    Gauger, Robert

    1993-01-01

    Describes lasers and indicates that learning about laser technology and creating laser technology activities are among the teacher enhancement processes needed to strengthen technology education. (JOW)

  6. GaN-based vertical-cavity laser performance improvements using tunnel-junction-cascaded active regions

    International Nuclear Information System (INIS)

    Piprek, Joachim

    2014-01-01

    This Letter investigates the output power enhancement achieved by tunnel junction insertion into the InGaN multi-quantum well (MQW) active region of a 410 nm vertical-cavity surface-emitting laser which enables the repeated use of carriers for light generation (carrier recycling). While the number of quantum wells remains unchanged, the tunnel junction eliminates absorption caused by the non-uniform MQW carrier distribution. The thermal resistance drops and the excess bias lead to a surprisingly small rise in self-heating.

  7. Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

    International Nuclear Information System (INIS)

    Deri, R.J.

    2011-01-01

    Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

  8. Planar integrated metasurfaces for highly-collimated terahertz quantum cascade lasers

    Science.gov (United States)

    Liang, Guozhen; Dupont, Emmanuel; Fathololoumi, Saeed; Wasilewski, Zbigniew R.; Ban, Dayan; Liang, Hou Kun; Zhang, Ying; Yu, Siu Fung; Li, Lianhe H.; Davies, Alexander Giles; Linfield, Edmund H.; Liu, Hui Chun; Wang, Qi Jie

    2014-01-01

    We report planar integration of tapered terahertz (THz) frequency quantum cascade lasers (QCLs) with metasurface waveguides that are designed to be spoof surface plasmon (SSP) out-couplers by introducing periodically arranged SSP scatterers. The resulting surface-emitting THz beam profile is highly collimated with a divergence as narrow as ~4° × 10°, which indicates a good waveguiding property of the metasurface waveguide. In addition, the low background THz power implies a high coupling efficiency for the THz radiation from the laser cavity to the metasurface structure. Furthermore, since all the structures are in-plane, this scheme provides a promising platform where well-established surface plasmon/metasurface techniques can be employed to engineer the emitted beam of THz QCLs controllably and flexibly. More importantly, an integrated active THz photonic circuit for sensing and communication applications could be constructed by incorporating other optoelectronic devices such as Schottky diode THz mixers, and graphene modulators and photodetectors. PMID:25403796

  9. A hybrid CATV/16-QAM-OFDM visible laser light communication system

    International Nuclear Information System (INIS)

    Lin, Chun-Yu; Li, Chung-Yi; Lu, Hai-Han; Chen, Chia-Yi; Jhang, Tai-Wei; Ruan, Sheng-Siang; Wu, Kuan-Hung

    2014-01-01

    A visible laser light communication (VLLC) system employing a vertical cavity surface emitting laser and spatial light modulator with hybrid CATV/16-QAM-OFDM modulating signals over a 5 m free-space link is proposed and demonstrated. With the assistance of a push-pull scheme, low-noise amplifier, and equalizer, good performances of composite second-order and composite triple beat are obtained, accompanied by an acceptable carrier-to-noise ratio performance for a CATV signal, and a low bit error rate value and clear constellation map are achieved for a 16-QAM-OFDM signal. Such a hybrid CATV/16-QAM-OFDM VLLC system would be attractive for providing services including CATV, Internet and telecommunication services. (paper)

  10. Integrated Micro-Optical Fluorescence Detection System for Microfluidic Electrochromatography

    International Nuclear Information System (INIS)

    ALLERMAN, ANDREW A.; ARNOLD, DON W.; ASBILL, RANDOLPH E.; BAILEY, CHRISTOPHER G.; CARTER, TONY RAY; KEMME, SHANALYN A.; MATZKE, CAROLYN M.; SAMORA, SALLY; SWEATT, WILLIAM C.; WARREN, MIAL E.; WENDT, JOEL R.

    1999-01-01

    The authors describe the design and microfabrication of an extremely compact optical system as a key element in an integrated capillary-channel electrochromatograph with laser induced fluorescence detection. The optical design uses substrate-mode propagation within the fused silica substrate. The optical system includes a vertical cavity surface-emitting laser (VCSEL) array, two high performance microlenses and a commercial photodetector. The microlenses are multilevel diffractive optics patterned by electron beam lithography and etched by reactive ion etching in fused silica. Two generations of optical subsystems are described. The first generation design is integrated directly onto the capillary channel-containing substrate with a 6 mm separation between the VCSEL and photodetector. The second generation design separates the optical system onto its own module and the source to detector length is further compressed to 3.5 mm. The systems are designed for indirect fluorescence detection using infrared dyes. The first generation design has been tested with a 750 nm VCSEL exciting a 10(sup -4) M solution of CY-7 dye. The observed signal-to-noise ratio of better than 100:1 demonstrates that the background signal from scattered pump light is low despite the compact size of the optical system and meets the system sensitivity requirements

  11. Polarization switching detection method using a ferroelectric liquid crystal for dichroic atomic vapor laser lock frequency stabilization techniques.

    Science.gov (United States)

    Dudzik, Grzegorz; Rzepka, Janusz; Abramski, Krzysztof M

    2015-04-01

    We present a concept of the polarization switching detection method implemented for frequency-stabilized lasers, called the polarization switching dichroic atomic vapor laser lock (PSDAVLL) technique. It is a combination of the well-known dichroic atomic vapor laser lock method for laser frequency stabilization with a synchronous detection system based on the surface-stabilized ferroelectric liquid crystal (SSFLC).The SSFLC is a polarization switch and quarter wave-plate component. This technique provides a 9.6 dB better dynamic range ratio (DNR) than the well-known two-photodiode detection configuration known as the balanced polarimeter. This paper describes the proposed method used practically in the VCSEL laser frequency stabilization system. The applied PSDAVLL method has allowed us to obtain a frequency stability of 2.7×10⁻⁹ and a reproducibility of 1.2×10⁻⁸, with a DNR of detected signals of around 81 dB. It has been shown that PSDAVLL might be successfully used as a method for spectra-stable laser sources.

  12. The Newest Laser Processing

    International Nuclear Information System (INIS)

    Lee, Baek Yeon

    2007-01-01

    This book mentions laser processing with laser principle, laser history, laser beam property, laser kinds, foundation of laser processing such as laser oscillation, characteristic of laser processing, laser for processing and its characteristic, processing of laser hole including conception of processing of laser hole and each material, and hole processing of metal material, cut of laser, reality of cut, laser welding, laser surface hardening, application case of special processing and safety measurement of laser.

  13. Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

    Science.gov (United States)

    Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

    2017-07-01

    We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

  14. Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser

    Science.gov (United States)

    Ellis, Bryan; Mayer, Marie A.; Shambat, Gary; Sarmiento, Tomas; Harris, James; Haller, Eugene E.; Vučković, Jelena

    2011-05-01

    Efficient, low-threshold and compact semiconductor laser sources are under investigation for many applications in high-speed communications, information processing and optical interconnects. The best edge-emitting and vertical-cavity surface-emitting lasers have thresholds on the order of 100 µA (refs 1,2), but dissipate too much power to be practical for many applications, particularly optical interconnects. Optically pumped photonic-crystal nanocavity lasers represent the state of the art in low-threshold lasers; however, to be practical, techniques to electrically pump these structures must be developed. Here, we demonstrate a quantum-dot photonic-crystal nanocavity laser in gallium arsenide pumped by a lateral p-i-n junction formed by ion implantation. Continuous-wave lasing is observed at temperatures up to 150 K. Thresholds of only 181 nA at 50 K and 287 nA at 150 K are observed--the lowest thresholds ever observed in any type of electrically pumped laser.

  15. Blue laser diode (LD) and light emitting diode (LED) applications

    International Nuclear Information System (INIS)

    Bergh, Arpad A.

    2004-01-01

    The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography. As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc. Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity. Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Blue laser diode (LD) and light emitting diode (LED) applications

    Energy Technology Data Exchange (ETDEWEB)

    Bergh, Arpad A [Optoelectronics Industry Development Association (OIDA), 1133 Connecticut Avenue, NW, Suite 600, Washington, DC 20036-4329 (United States)

    2004-09-01

    The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography. As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc. Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity. Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Noise induced stabilization of chaotic free-running laser diode

    Energy Technology Data Exchange (ETDEWEB)

    Virte, Martin, E-mail: mvirte@b-phot.org [Brussels Photonics Team, Department of Applied Physics and Photonics, Vrije Universiteit Brussel, Pleinlaan 2, 1050 Brussel (Belgium)

    2016-05-15

    In this paper, we investigate theoretically the stabilization of a free-running vertical-cavity surface-emitting laser exhibiting polarization chaos dynamics. We report the existence of a boundary isolating the chaotic attractor on one side and a steady-state on the other side and identify the unstable periodic orbit playing the role of separatrix. In addition, we highlight a small range of parameters where the chaotic attractor passes through this boundary, and therefore where chaos only appears as a transient behaviour. Then, including the effect of spontaneous emission noise in the laser, we demonstrate that, for realistic levels of noise, the system is systematically pushed over the separating solution. As a result, we show that the chaotic dynamics cannot be sustained unless the steady-state on the other side of the separatrix becomes unstable. Finally, we link the stability of this steady-state to a small value of the birefringence in the laser cavity and discuss the significance of this result on future experimental work.

  18. Toward continuous-wave operation of organic semiconductor lasers

    Science.gov (United States)

    Sandanayaka, Atula S. D.; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya

    2017-01-01

    The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi–continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture. PMID:28508042

  19. Vortex Laser based on III-V semiconductor metasurface: direct generation of coherent Laguerre-Gauss modes carrying controlled orbital angular momentum.

    Science.gov (United States)

    Seghilani, Mohamed S; Myara, Mikhael; Sellahi, Mohamed; Legratiet, Luc; Sagnes, Isabelle; Beaudoin, Grégoire; Lalanne, Philippe; Garnache, Arnaud

    2016-12-05

    The generation of a coherent state, supporting a large photon number, with controlled orbital-angular-momentum L = ħl (of charge l per photon) presents both fundamental and technological challenges: we demonstrate a surface-emitting laser, based on III-V semiconductor technology with an integrated metasurface, generating vortex-like coherent state in the Laguerre-Gauss basis. We use a first order phase perturbation to lift orbital degeneracy of wavefunctions, by introducing a weak anisotropy called here "orbital birefringence", based on a dielectric metasurface. The azimuthal symmetry breakdown and non-linear laser dynamics create "orbital gain dichroism" allowing selecting vortex handedness. This coherent photonic device was characterized and studied, experimentally and theoretically. It exhibits a low divergence (50 dB vortex purity), and single frequency operation in a stable low noise regime (0.1% rms). Such high performance laser opens the path to widespread new photonic applications.

  20. A HWIL test facility of infrared imaging laser radar using direct signal injection

    Science.gov (United States)

    Wang, Qian; Lu, Wei; Wang, Chunhui; Wang, Qi

    2005-01-01

    Laser radar has been widely used these years and the hardware-in-the-loop (HWIL) testing of laser radar become important because of its low cost and high fidelity compare with On-the-Fly testing and whole digital simulation separately. Scene generation and projection two key technologies of hardware-in-the-loop testing of laser radar and is a complicated problem because the 3D images result from time delay. The scene generation process begins with the definition of the target geometry and reflectivity and range. The real-time 3D scene generation computer is a PC based hardware and the 3D target models were modeled using 3dsMAX. The scene generation software was written in C and OpenGL and is executed to extract the Z-buffer from the bit planes to main memory as range image. These pixels contain each target position x, y, z and its respective intensity and range value. Expensive optical injection technologies of scene projection such as LDP array, VCSEL array, DMD and associated scene generation is ongoing. But the optical scene projection is complicated and always unaffordable. In this paper a cheaper test facility was described that uses direct electronic injection to provide rang images for laser radar testing. The electronic delay and pulse shaping circuits inject the scenes directly into the seeker's signal processing unit.

  1. Mega-pixel PQR laser chips for interconnect, display ITS, and biocell-tweezers OEIC

    Science.gov (United States)

    Kwon, O'Dae; Yoon, J. H.; Kim, D. K.; Kim, Y. C.; Lee, S. E.; Kim, S. S.

    2008-02-01

    We describe a photonic quantum ring (PQR) laser device of three dimensional toroidal whispering gallery cavity. We have succeeded in fabricating the first genuine mega-pixel laser chips via regular semiconductor technology. This has been realized since the present injection laser emitting surface-normal dominant 3D whispering gallery modes (WGMs) can be operated CW with extremely low operating currents (μA-nA per pixel), together with the lasing temperature stabilities well above 140 deg C with minimal redshifts, which solves the well-known integration problems facing the conventional VCSEL. Such properties unusual for quantum well lasers become usual because the active region, involving vertically confining DBR structure in addition to the 2D concave WGM geometry, induces a 'photonic quantum ring (PQR)-like' carrier distribution through a photonic quantum corral effect. A few applications of such mega-pixel PQR chips are explained as follows: (A) Next-generation 3D semiconductor technologies demand a strategy on the inter-chip and intra-chip optical interconnect schemes with a key to the high-density emitter array. (B) Due to mounting traffic problems and fatalities ITS technology today is looking for a revolutionary change in the technology. We will thus outline how 'SLEEP-ITS' can emerge with the PQR's position-sensing capability. (C) We describe a recent PQR 'hole' laser of convex WGM: Mega-pixel PQR 'hole' laser chips are even easier to fabricate than PQR 'mesa' lasers. Genuine Laguerre-Gaussian (LG) beam patterns of PQR holes are very promising for biocell manipulations like sorting mouse myeloid leukemia (M1s) cells. (D) Energy saving and 3D speckle-free POR laser can outdo LEDs in view of red GaAs and blue GaN devices fabricated recently.

  2. Radiation-hard/high-speed parallel optical links

    International Nuclear Information System (INIS)

    Gan, K.K.; Buchholz, P.; Kagan, H.P.; Kass, R.D.; Moore, J.; Smith, D.S.; Wiese, A.; Ziolkowski, M.

    2014-01-01

    We have designed an ASIC for use in a parallel optical engine for a new layer of the ATLAS pixel detector in the initial phase of the LHC luminosity upgrade. The ASIC is a 12-channel VCSEL (Vertical Cavity Surface Emitting Laser) array driver capable of operating up to 5 Gb/s per channel. The ASIC is designed using a 130 nm CMOS process to enhance the radiation-hardness. A scheme for redundancy has also been implemented to allow bypassing of a broken VCSEL. The ASIC also contains a power-on reset circuit that sets the ASIC to a default configuration with no signal steering. In addition, the bias and modulation currents of the individual channels are programmable. The performance of the first prototype ASIC up to 5 Gb/s is satisfactory. Furthermore, we are able to program the bias and modulation currents and to bypass a broken VCSEL channel. We are currently upgrading our design to allow operation at 10 Gb/s per channel yielding an aggregated bandwidth of 120 Gb/s. Some preliminary results of the design will be presented

  3. Flip-chip bonded optoelectronic integration based on ultrathin silicon (UTSi) CMOS

    Science.gov (United States)

    Hong, Sunkwang; Ho, Tawei; Zhang, Liping; Sawchuk, Alexander A.

    2003-06-01

    We describe the design and test of flip-chip bonded optoelectronic CMOS devices based on Peregrine Semiconductor's 0.5 micron Ultra-Thin Silicon on sapphire (UTSi) technology. The UTSi process eliminates the substrate leakage that typically results in crosstalk and reduces parasitic capacitance to the substrate, providing many benefits compared to bulk silicon CMOS. The low-loss synthetic sapphire substrate is optically transparent and has a coefficient of thermal expansion suitable for flip-chip bonding of vertical cavity surface emitting lasers (VCSELs) and detectors. We have designed two different UTSi CMOS chips. One contains a flip-chip bonded 1 x 4 photodiode array, a receiver array, a double edge triggered D-flip flop-based 2047-pattern pseudo random bit stream (PRBS) generator and a quadrature-phase LC-voltage controlled oscillator (VCO). The other chip contains a flip-chip bonded 1 x 4 VCSEL array, a driver array based on high-speed low-voltage differential signals (LVDS) and a full-balanced differential LC-VCO. Each VCSEL driver and receiver has individual input and bias voltage adjustments. Each UTSi chip is mounted on different printed circuit boards (PCBs) which have holes with about 1 mm radius for optical output and input paths through the sapphire substrate. We discuss preliminary testing of these chips.

  4. Laser Therapy

    Science.gov (United States)

    ... for Every Season How to Choose the Best Skin Care Products In This Section Dermatologic Surgery What is dermatologic ... for Every Season How to Choose the Best Skin Care Products Laser Resurfacing Uses for Laser Resurfacing Learn more ...

  5. Lasers technology

    International Nuclear Information System (INIS)

    2014-01-01

    The Laser Technology Program of IPEN is developed by the Center for Lasers and Applications (CLA) and is committed to the development of new lasers based on the research of new optical materials and new resonator technologies. Laser applications and research occur within several areas such as Nuclear, Medicine, Dentistry, Industry, Environment and Advanced Research. Additional goals of the Program are human resource development and innovation, in association with Brazilian Universities and commercial partners

  6. YCOB lasers

    International Nuclear Information System (INIS)

    Richardson, Martin; Hammons, Dennis; Eichenholz, Jason; Chai, Bruce; Ye, Qing; Jang, Won; Shah, Lawrence

    1999-01-01

    We review new developments with a new laser host material, YCa 4 O(BO 3 ) 3 or YCOB. Lasers based on this host material will open new opportunities for the development of compact, high-power, frequency-agile visible and near IR laser sources, as well as sources for ultrashort pulses. Efficient diode-pumped laser action with both Nd-doped and Yb-doped YCOB has already been demonstrated. Moreover, since these materials are biaxial, and have high nonlinear optical coefficients, they have become the first laser materials available as efficient self-frequency-doubled lasers, capable of providing tunable laser emission in several regions of the visible spectrum. Self-frequency doubling eliminates the need for inclusion of a nonlinear optical element within or external to the laser resonator. These laser materials possess excellent thermal and optical properties, have high laser-damage thresholds, and can be grown to large sizes. In addition they are non-hygroscopic. They therefore possess all the characteristics necessary for laser materials required in rugged, compact systems. Here we summarize the rapid progress made in the development of this new class of lasers, and review their potential for a number of applications. (author)

  7. Laser sampling

    International Nuclear Information System (INIS)

    Gorbatenko, A A; Revina, E I

    2015-01-01

    The review is devoted to the major advances in laser sampling. The advantages and drawbacks of the technique are considered. Specific features of combinations of laser sampling with various instrumental analytical methods, primarily inductively coupled plasma mass spectrometry, are discussed. Examples of practical implementation of hybrid methods involving laser sampling as well as corresponding analytical characteristics are presented. The bibliography includes 78 references

  8. HF laser

    International Nuclear Information System (INIS)

    Suzuki, Kazuya; Iwasaki, Matae

    1977-01-01

    A review is made of the research and development of HF chemical laser and its related work. Many gaseous compounds are used as laser media successfully; reaction kinetics and technological problems are described. The hybrid chemical laser of HF-CO 2 system and the topics related to the isotope separation are also included. (auth.)

  9. Mid infrared resonant cavity detectors and lasers with epitaxial lead-chalcogenides

    Science.gov (United States)

    Zogg, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Quack, N.

    2010-09-01

    Wavelength tunable emitters and detectors in the mid-IR wavelength region allow applications including thermal imaging and gas spectroscopy. One way to realize such tunable devices is by using a resonant cavity. By mechanically changing the cavity length with MEMS mirror techniques, the wavelengths may be tuned over a considerable range. Resonant cavity enhanced detectors (RCED) are sensitive at the cavity resonance only. They may be applied for low resolution spectroscopy, and, when arrays of such detectors are realized, as multicolour IR-FPA or "IR-AFPA", adaptive focal plane arrays. We report the first room temperature mid-IR VECSEL (vertical external cavity surface emitting laser) with a wavelength above 3 μm. The active region is just 850 nm PbSe, followed by a 2.5 pair Bragg mirror. Output power is > 10 mW at RT.

  10. Infrared laser spectroscopic trace gas sensing

    Science.gov (United States)

    Sigrist, Markus

    2016-04-01

    Chemical sensing and analyses of gas samples by laser spectroscopic methods are attractive owing to several advantages such as high sensitivity and specificity, large dynamic range, multi-component capability, and lack of pretreatment or preconcentration procedures. The preferred wavelength range comprises the fundamental molecular absorption range in the mid-infared between 3 and 15 μm, whereas the near-infrared range covers the (10-100 times weaker) higher harmonics and combination bands. The availability of near-infrared and, particularly, of broadly tunable mid-infrared sources like external cavity quantum cascade lasers (EC-QCLs), interband cascade lasers (ICLs), difference frequency generation (DFG), optical parametric oscillators (OPOs), recent developments of diode-pumped lead salt semiconductor lasers, of supercontinuum sources or of frequency combs have eased the implementation of laser-based sensing devices. Sensitive techniques for molecular absorption measurements include multipass absorption, various configurations of cavity-enhanced techniques such as cavity ringdown (CRD), or of photoacoustic spectroscopy (PAS) including quartz-enhanced (QEPAS) or cantilever-enhanced (CEPAS) techniques. The application requirements finally determine the optimum selection of laser source and detection scheme. In this tutorial talk I shall discuss the basic principles, present various experimental setups and illustrate the performance of selected systems for chemical sensing of selected key atmospheric species. Applications include an early example of continuous vehicle emission measurements with a mobile CO2-laser PAS system [1]. The fast analysis of C1-C4 alkanes at sub-ppm concentrations in gas mixtures is of great interest for the petrochemical industry and was recently achieved with a new type of mid-infrared diode-pumped piezoelectrically tuned lead salt vertical external cavity surface emitting laser (VECSEL) [2]. Another example concerns measurements on short

  11. Laser fusion

    International Nuclear Information System (INIS)

    Eliezer, S.

    1982-02-01

    In this paper, the physics of laser fusion is described on an elementary level. The irradiated matter consists of a dense inner core surrounded by a less dense plasma corona. The laser radiation is mainly absorbed in the outer periphery of the plasma. The absorbed energy is transported inward to the ablation surface where plasma flow is created. Due to this plasma flow, a sequence of inward going shock waves and heat waves are created, resulting in the compression and heating of the core to high density and temperature. The interaction physics between laser and matter leading to thermonuclear burn is summarized by the following sequence of events: Laser absorption → Energy transport → Compression → Nuclear Fusion. This scenario is shown in particular for a Nd:laser with a wavelength of 1 μm. The wavelength scaling of the physical processes is also discussed. In addition to the laser-plasma physics, the Nd high power pulsed laser is described. We give a very brief description of the oscillator, the amplifiers, the spatial filters, the isolators and the diagnostics involved. Last, but not least, the concept of reactors for laser fusion and the necessary laser system are discussed. (author)

  12. Biocavity Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Gourley, P.L.; Gourley, M.F.

    2000-10-05

    Laser technology has advanced dramatically and is an integral part of today's healthcare delivery system. Lasers are used in the laboratory analysis of human blood samples and serve as surgical tools that kill, burn or cut tissue. Recent semiconductor microtechnology has reduced the size o f a laser to the size of a biological cell or even a virus particle. By integrating these ultra small lasers with biological systems, it is possible to create micro-electrical mechanical systems that may revolutionize health care delivery.

  13. High power lasers & systems

    OpenAIRE

    Chatwin, Chris; Young, Rupert; Birch, Philip

    2015-01-01

    Some laser history;\\ud Airborne Laser Testbed & Chemical Oxygen Iodine Laser (COIL);\\ud Laser modes and beam propagation;\\ud Fibre lasers and applications;\\ud US Navy Laser system – NRL 33kW fibre laser;\\ud Lockheed Martin 30kW fibre laser;\\ud Conclusions

  14. Laser Dyes

    Indian Academy of Sciences (India)

    amplification or generation of coherent light waves in the UV,. VIS, and near IR region. .... ciency in most flashlamp pumped dye lasers. It is used as reference dye .... have led to superior laser dyes with increased photostabilities. For instance ...

  15. Characterization and modeling of the intrinsic properties of 1.5-micrometer gallium indium nitrogen arsenic antimonide/gallium arsenide laser

    Science.gov (United States)

    Goddard, Lynford

    2005-12-01

    Low cost access to optical communication networks is needed to satisfy the rapidly increasing demands of home-based high-speed Internet. Existing light sources in the low-loss 1.2--1.6mum telecommunication wavelength bandwidth are prohibitively expensive for large-scale deployment, e.g. incorporation in individual personal computers. Recently, we have extended the lasing wavelength of room-temperature CW GaInNAs(Sb) lasers grown monolithically on GaAs by MBE up to 1.52mum in an effort to replace the traditional, more expensive, InP-based devices. Besides lower cost wafers, GaInNAs(Sb) opto-electronic devices have fundamental material advantages over InP-based devices: a larger conduction band offset which reduces temperature sensitivity and enhances differential gain, a lattice match to a material with a large refractive index contrast, i.e. AlAs, which decreases the necessary number of mirror pairs in DBRs for VCSELs, and native oxide apertures for current confinement. High performance GaInNAs(Sb) edge-emitting lasers, VCSELs, and DFB lasers have been demonstrated throughout the entire telecommunication band. In this work, we analyze the intrinsic properties of the GaInNAsSb material system, e.g. recombination, gain, band structure and renormalization, and efficiency. Theoretical modeling is performed to calculate a map of the bandgap and effective masses for various material compositions. We also present device performance results, such as: room temperature CW threshold densities below 450A/cm2, quantum efficiencies above 50%, and over 425mW of total power from a SQW laser when mounted epi-up and minimally packaged. These results are generally 2--4x better than previous world records for GaAs based devices at 1.5mum. The high CW power and low threshold exhibited by these SQW lasers near 1.5mum make feasible many novel applications, such as broadband Raman fiber amplifiers and uncooled WDM at the chip scale. Device reliability of almost 500 hours at 200mW CW

  16. Optical data transmission ASICs for the high-luminosity LHC (HL-LHC) experiments

    International Nuclear Information System (INIS)

    Li, X; Huang, G; Sun, X; Liu, G; Deng, B; Gong, D; Guo, D; Liu, C; Liu, T; Xiang, A C; Ye, J; Zhao, X; Chen, J; You, Y; He, M; Hou, S; Teng, P-K; Jin, G; Liang, H; Liang, F

    2014-01-01

    We present the design and test results of two optical data transmission ASICs for the High-Luminosity LHC (HL-LHC) experiments. These ASICs include a two-channel serializer (LOCs2) and a single-channel Vertical Cavity Surface Emitting Laser (VCSEL) driver (LOCld1V2). Both ASICs are fabricated in a commercial 0.25-μm Silicon-on-Sapphire (SoS) CMOS technology and operate at a data rate up to 8 Gbps per channel. The power consumption of LOCs2 and LOCld1V2 are 1.25 W and 0.27 W at 8-Gbps data rate, respectively. LOCld1V2 has been verified meeting the radiation-tolerance requirements for HL-LHC experiments

  17. High Dimensional Modulation and MIMO Techniques for Access Networks

    DEFF Research Database (Denmark)

    Binti Othman, Maisara

    Exploration of advanced modulation formats and multiplexing techniques for next generation optical access networks are of interest as promising solutions for delivering multiple services to end-users. This thesis addresses this from two different angles: high dimensionality carrierless...... the capacity per wavelength of the femto-cell network. Bit rate up to 1.59 Gbps with fiber-wireless transmission over 1 m air distance is demonstrated. The results presented in this thesis demonstrate the feasibility of high dimensionality CAP in increasing the number of dimensions and their potentially......) optical access network. 2 X 2 MIMO RoF employing orthogonal frequency division multiplexing (OFDM) with 5.6 GHz RoF signaling over all-vertical cavity surface emitting lasers (VCSEL) WDM passive optical networks (PONs). We have employed polarization division multiplexing (PDM) to further increase...

  18. Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures

    International Nuclear Information System (INIS)

    Egorov, A. Yu.; Karachinsky, L. Ya.; Novikov, I. I.; Babichev, A. V.; Berezovskaya, T. N.; Nevedomskiy, V. N.

    2015-01-01

    It is shown that metamorphic In 0.3 Ga 0.7 As/In 0.3 Al 0.7 As distributed Bragg reflectors (DBRs) with a reflection band at 1440–1600 nm and a reflectance of no less than 0.999 can be fabricated by molecular beam epitaxy (MBE) on a GaAs substrate. It is demonstrated that mesa structures formed from metamorphic DBRs on a GaAs substrate can be regrown by MBE and microcavities can be locally formed in two separate epitaxial processes. The results obtained can find wide application in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction

  19. High-speed 1550 nm VCSEL data transmission link employing 25 Gbaud 4-PAM modulation and Hard Decision Forward Error Correction

    DEFF Research Database (Denmark)

    Rodes Lopez, Roberto; Mueller, M.; Li, Bomin

    2013-01-01

    Current short-range optical interconnects capacity is moving from 100 Gb/s to 400 Gb/s and beyond. Directly modulation of several laser sources is used to minimize bandwidth limitations of current optical and electrical components. Either this total capacity is provided by wavelengthdivision- mul...

  20. Laser spectroscopy

    CERN Document Server

    Demtröder, Wolfgang

    2008-01-01

    Keeping abreast of the latest techniques and applications, this new edition of the standard reference and graduate text on laser spectroscopy has been completely revised and expanded. While the general concept is unchanged, the new edition features a broad array of new material, e.g., frequency doubling in external cavities, reliable cw-parametric oscillators, tunable narrow-band UV sources, more sensitive detection techniques, tunable femtosecond and sub-femtosecond lasers (X-ray region and the attosecond range), control of atomic and molecular excitations, frequency combs able to synchronize independent femtosecond lasers, coherent matter waves, and still more applications in chemical analysis, medical diagnostics, and engineering.

  1. Laser spectroscopy

    CERN Document Server

    Demtröder, Wolfgang

    Keeping abreast of the latest techniques and applications, this new edition of the standard reference and graduate text on laser spectroscopy has been completely revised and expanded. While the general concept is unchanged, the new edition features a broad array of new material, e.g., ultrafast lasers (atto- and femto-second lasers) and parametric oscillators, coherent matter waves, Doppler-free Fourier spectroscopy with optical frequency combs, interference spectroscopy, quantum optics, the interferometric detection of gravitational waves and still more applications in chemical analysis, medical diagnostics, and engineering.

  2. Il laser

    CERN Document Server

    Smith, William V

    1974-01-01

    Verso il 1960, il laser era ancora "una soluzione alla ricerca di un problema", ma fin dagli anni immediatamente successivi si è rivelato uno strumento insostituibile per le applicazioni più svariate.

  3. Laser Refractography

    CERN Document Server

    Rinkevichyus, B.S; Raskovskaya, I.L

    2010-01-01

    This book describes the basic principles of laser refractography, a flexible new diagnostic tool for measuring optically inhomogeneous media and flows. Laser refractography is based on digital imaging and computer processing of structured laser beam refraction (SLR) in inhomogeneous transparent media. Laser refractograms provide both qualitative and quantitative measurements and can be used for the study of fast and transient processes. In this book, the theoretical basis of refractography is explored in some detail, and experimental setups are described for measurement of transparent media using either 2D (passed radiation) or 3D (scattered radiation) refractograms. Specific examples and applications are discussed, including visualization of the boundary layer near a hot or cold metallic ball in water, and observation of edge effects and microlayers in liquids and gases. As the first book to describe this new and exciting technique, this monograph has broad cross-disciplinary appeal and will be of interest t...

  4. Laser fusion

    International Nuclear Information System (INIS)

    Ashby, D.E.T.F.

    1976-01-01

    A short survey is given on laser fusion its basic concepts and problems and the present theoretical and experimental methods. The future research program of the USA in this field is outlined. (WBU) [de

  5. Laser spectroscopy

    International Nuclear Information System (INIS)

    Letokhov, V.S.

    1981-01-01

    This article describes recent progress in the application of laser atomic spectroscopy to study parameters of nuclei available in very small quantities; radioactive nuclei, rare isotopes, nuclear isomers, etc, for which study by conventional spectroscopic methods is difficult. (author)

  6. Laser fusion

    International Nuclear Information System (INIS)

    Key, M.H.; Oxford Univ.

    1990-04-01

    The use of lasers to drive implosions for the purpose of inertially confined fusion is an area of intense activity where progress compares favourably with that made in magnetic fusion and there are significant prospects for future development. In this brief review the basic concept is summarised and the current status is outlined both in the area of laser technology and in the most recent results from implosion experiments. Prospects for the future are also considered. (author)

  7. Laser Resurfacing

    OpenAIRE

    Janik, Joseph P.; Markus, Jodi L.; Al-Dujaili, Zeena; Markus, Ramsey F.

    2007-01-01

    In a society desiring images of beauty and youthfulness, the world of cutaneous surgery offers the gifts of facial rejuvenation for those determined to combat the signs of aging. With the development of novel laser and plasma technology, pigmentary changes, scarring, and wrinkles can be conquered providing smoother, healthier, younger-looking skin. This review highlights five of the most popular resurfacing technologies in practice today including the carbon dioxide (CO2) laser, the erbium:yt...

  8. Green lasers

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin

    2010-01-01

    Well over a dozen papers at this year's Photonics West meeting in San Francisco boasted improvements in harmonic generation to produce visible laser beams, most of them in the green spectral range......Well over a dozen papers at this year's Photonics West meeting in San Francisco boasted improvements in harmonic generation to produce visible laser beams, most of them in the green spectral range...

  9. Laser material processing

    CERN Document Server

    Steen, William

    2010-01-01

    This text moves from the basics of laser physics to detailed treatments of all major materials processing techniques for which lasers are now essential. New chapters cover laser physics, drilling, micro- and nanomanufacturing and biomedical laser processing.

  10. Laser therapy for cancer

    Science.gov (United States)

    ... this page: //medlineplus.gov/ency/patientinstructions/000905.htm Laser therapy for cancer To use the sharing features ... Lasers are also used on the skin. How Laser Therapy is Used Laser therapy can be used ...

  11. Lasers in Cancer Treatment

    Science.gov (United States)

    ... the advantages of laser therapy? What are the disadvantages of laser therapy? What does the future hold ... therapy is appropriate for them. What are the disadvantages of laser therapy? Laser therapy also has several ...

  12. Practical laser safety

    International Nuclear Information System (INIS)

    Winburn, D.C.

    1985-01-01

    This book includes discussions of the following topics: characteristics of lasers; eye components; skin damage thresholds; classification of lasers by ANSI Z136.1; selecting laser-protective eyewear; hazards associated with lasers; and, an index

  13. Laser acceleration

    Science.gov (United States)

    Tajima, T.; Nakajima, K.; Mourou, G.

    2017-02-01

    The fundamental idea of Laser Wakefield Acceleration (LWFA) is reviewed. An ultrafast intense laser pulse drives coherent wakefield with a relativistic amplitude robustly supported by the plasma. While the large amplitude of wakefields involves collective resonant oscillations of the eigenmode of the entire plasma electrons, the wake phase velocity ˜ c and ultrafastness of the laser pulse introduce the wake stability and rigidity. A large number of worldwide experiments show a rapid progress of this concept realization toward both the high-energy accelerator prospect and broad applications. The strong interest in this has been spurring and stimulating novel laser technologies, including the Chirped Pulse Amplification, the Thin Film Compression, the Coherent Amplification Network, and the Relativistic Mirror Compression. These in turn have created a conglomerate of novel science and technology with LWFA to form a new genre of high field science with many parameters of merit in this field increasing exponentially lately. This science has triggered a number of worldwide research centers and initiatives. Associated physics of ion acceleration, X-ray generation, and astrophysical processes of ultrahigh energy cosmic rays are reviewed. Applications such as X-ray free electron laser, cancer therapy, and radioisotope production etc. are considered. A new avenue of LWFA using nanomaterials is also emerging.

  14. Laser acceleration

    International Nuclear Information System (INIS)

    Tajima, T.; Nakajima, K.; Mourou, G.

    2017-01-01

    The fundamental idea of LaserWakefield Acceleration (LWFA) is reviewed. An ultrafast intense laser pulse drives coherent wakefield with a relativistic amplitude robustly supported by the plasma. While the large amplitude of wake fields involves collective resonant oscillations of the eigenmode of the entire plasma electrons, the wake phase velocity ∼ c and ultra fastness of the laser pulse introduce the wake stability and rigidity. A large number of worldwide experiments show a rapid progress of this concept realization toward both the high-energy accelerator prospect and broad applications. The strong interest in this has been spurring and stimulating novel laser technologies, including the Chirped Pulse Amplification, the Thin Film Compression, the Coherent Amplification Network, and the Relativistic Mirror Compression. These in turn have created a conglomerate of novel science and technology with LWFA to form a new genre of high field science with many parameters of merit in this field increasing exponentially lately. This science has triggered a number of worldwide research centers and initiatives. Associated physics of ion acceleration, X-ray generation, and astrophysical processes of ultrahigh energy cosmic rays are reviewed. Applications such as X-ray free electron laser, cancer therapy, and radioisotope production etc. are considered. A new avenue of LWFA using nano materials is also emerging.

  15. Laser Heterodyning

    CERN Document Server

    Protopopov, Vladimir V

    2009-01-01

    Laser heterodyning is now a widespread optical technique, based on interference of two waves with slightly different frequencies within the sensitive area of a photo-detector. Its unique feature – preserving phase information about optical wave in the electrical signal of the photo-detector – finds numerous applications in various domains of applied optics and optoelectronics: in spectroscopy, polarimetry, radiometry, laser radars and Lidars, microscopy and other areas. The reader may be surprised by a variety of disciplines that this book covers and satisfied by detailed explanation of the phenomena. Very well illustrated, this book will be helpful for researches, postgraduates and students, working in applied optics.

  16. Laser polarimetry

    International Nuclear Information System (INIS)

    Goldstein, D.H.

    1989-01-01

    Polarimetry, or transmission ellipsometry, is an important experimental technique for the determination of polarization properties of bulk materials. In this technique, source radiation of known polarization is passed through bulk samples to determine, for example, natural or induced birefringence and dichroism. The laser is a particularly appropriate source for this technique because of its monochromaticity, collimation, and radiant intensity. Lasers of many different wavelengths in different spectral regions are now available. Laser polarimetry can be done in any of these wavelength regions where polarizing elements are available. In this paper, polarimetry is reviewed with respect to applications, sources used, and polarization state generator and analyzer configurations. Scattering ellipsometry is also discussed insofar as the forward scattering measurement is related to polarimetry. The authors then describe an infrared laser polarimeter which we have designed and constructed. This instrument can operate over large wavelength regions with only a change in source. Polarization elements of the polarimeter are in a dual rotating retarder configuration. Computer controlled rotary stages and computer monitored detectors automate the data collection. The Mueller formulation is used to process the polarization information. Issues and recent progress with this instrument are discussed

  17. excimer laser

    Indian Academy of Sciences (India)

    2014-01-07

    Jan 7, 2014 ... is necessary to deposit one order higher input electric power into gas medium than ... cross-sectional view of the laser system is shown in figure 2A. The system mainly consists ... Considering the simplicity and reliability of the.

  18. Laser device

    DEFF Research Database (Denmark)

    2013-01-01

    The present invention provides a light source for light circuits on a silicon platform. A vertical laser cavity is formed by a gain region arranged between a first mirror structure and a second mirror structure, both acting as mirrors, by forming a grating region including an active material...

  19. Nanowire Lasers

    Directory of Open Access Journals (Sweden)

    Couteau C.

    2015-05-01

    Full Text Available We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs, solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

  20. Modelling optical fibers acquisition and transmission systems for their use in nuclear environments

    International Nuclear Information System (INIS)

    Van-Uffelen, Marco

    2001-01-01

    In order to introduce connections based on optical fibres in the field of civil nuclear activities, it is important to have a good knowledge of their behaviour under irradiation. The objective of this research thesis is thus to develop a tool to predict the lifetime of such an optical connection which would allow a predictive maintenance. The adopted methodology relies on a modular approach and consists in the characterization of the behaviour of individual components under test conditions which are representative of addressed applications. Transfer functions are then chained to obtain the connection predictive model. Various components have been studied: mono- and multi-mode optical fibres, light-emitting diodes, vertical-cavity surface-emitting laser diodes (VCSEL), as well as Si and InGaAs sensors. These components have been submitted to a range of dose rates and cumulated dose under temperatures reaching 85 C. Based on on-line measurements, a pragmatic approach has been assessed to predict the evolution of optical losses induced in optical fibres during several months. The difference between measurements and predictions ranges between 10 and 20 per cent depending on the fibre type and on the wavelength. VCSELs display a high tolerance to gamma radiation and a steady operation at high temperatures, whereas sensors appear to be the weakest link [fr

  1. Novel Electro-Optical Coupling Technique for Magnetic Resonance-Compatible Positron Emission Tomography Detectors

    Directory of Open Access Journals (Sweden)

    Peter D. Olcott

    2009-03-01

    Full Text Available A new magnetic resonance imaging (MRI-compatible positron emission tomography (PET detector design is being developed that uses electro-optical coupling to bring the amplitude and arrival time information of high-speed PET detector scintillation pulses out of an MRI system. The electro-optical coupling technology consists of a magnetically insensitive photodetector output signal connected to a nonmagnetic vertical cavity surface emitting laser (VCSEL diode that is coupled to a multimode optical fiber. This scheme essentially acts as an optical wire with no influence on the MRI system. To test the feasibility of this approach, a lutetium-yttrium oxyorthosilicate crystal coupled to a single pixel of a solid-state photomultiplier array was placed in coincidence with a lutetium oxyorthosilicate crystal coupled to a fast photomultiplier tube with both the new nonmagnetic VCSEL coupling and the standard coaxial cable signal transmission scheme. No significant change was observed in 511 keV photopeak energy resolution and coincidence time resolution. This electro-optical coupling technology enables an MRI-compatible PET block detector to have a reduced electromagnetic footprint compared with the signal transmission schemes deployed in the current MRI/PET designs.

  2. Novel electro-optical coupling technique for magnetic resonance-compatible positron emission tomography detectors.

    Science.gov (United States)

    Olcott, Peter D; Peng, Hao; Levin, Craig S

    2009-01-01

    A new magnetic resonance imaging (MRI)-compatible positron emission tomography (PET) detector design is being developed that uses electro-optical coupling to bring the amplitude and arrival time information of high-speed PET detector scintillation pulses out of an MRI system. The electro-optical coupling technology consists of a magnetically insensitive photodetector output signal connected to a nonmagnetic vertical cavity surface emitting laser (VCSEL) diode that is coupled to a multimode optical fiber. This scheme essentially acts as an optical wire with no influence on the MRI system. To test the feasibility of this approach, a lutetium-yttrium oxyorthosilicate crystal coupled to a single pixel of a solid-state photomultiplier array was placed in coincidence with a lutetium oxyorthosilicate crystal coupled to a fast photomultiplier tube with both the new nonmagnetic VCSEL coupling and the standard coaxial cable signal transmission scheme. No significant change was observed in 511 keV photopeak energy resolution and coincidence time resolution. This electro-optical coupling technology enables an MRI-compatible PET block detector to have a reduced electromagnetic footprint compared with the signal transmission schemes deployed in the current MRI/PET designs.

  3. Investigation and experimental validation of the contribution of optical interconnects in the SYMPHONIE massively parallel computer

    International Nuclear Information System (INIS)

    Scheer, Patrick

    1998-01-01

    Progress in microelectronics lead to electronic circuits which are increasingly integrated, with an operating frequency and an inputs/outputs count larger than the ones supported by printed circuit board and back-plane technologies. As a result, distributed systems with several boards cannot fully exploit the performance of integrated circuits. In synchronous parallel computers, the situation is worsen since the overall system performances rely on the efficiency of electrical interconnects between the integrated circuits which include the processing elements (PE). The study of a real parallel computer named SYMPHONIE shows for instance that the system operating frequency is far smaller than the capabilities of the microelectronics technology used for the PE implementation. Optical interconnections may cancel these limitations by providing more efficient connections between the PE. Especially, free-space optical interconnections based on vertical-cavity surface-emitting lasers (VCSEL), micro-lens and PIN photodiodes are compatible with the required features of the PE communications. Zero bias modulation of VCSEL with CMOS-compatible digital signals is studied and experimentally demonstrated. A model of the propagation of truncated gaussian beams through micro-lenses is developed. It is then used to optimise the geometry of the detection areas. A dedicated mechanical system is also proposed and implemented for integrating free-space optical interconnects in a standard electronic environment, representative of the one of parallel computer systems. A specially designed demonstrator provides the experimental validation of the above physical concepts. (author) [fr

  4. Two-dimensional optoelectronic interconnect-processor and its operational bit error rate

    Science.gov (United States)

    Liu, J. Jiang; Gollsneider, Brian; Chang, Wayne H.; Carhart, Gary W.; Vorontsov, Mikhail A.; Simonis, George J.; Shoop, Barry L.

    2004-10-01

    Two-dimensional (2-D) multi-channel 8x8 optical interconnect and processor system were designed and developed using complementary metal-oxide-semiconductor (CMOS) driven 850-nm vertical-cavity surface-emitting laser (VCSEL) arrays and the photodetector (PD) arrays with corresponding wavelengths. We performed operation and bit-error-rate (BER) analysis on this free-space integrated 8x8 VCSEL optical interconnects driven by silicon-on-sapphire (SOS) circuits. Pseudo-random bit stream (PRBS) data sequence was used in operation of the interconnects. Eye diagrams were measured from individual channels and analyzed using a digital oscilloscope at data rates from 155 Mb/s to 1.5 Gb/s. Using a statistical model of Gaussian distribution for the random noise in the transmission, we developed a method to compute the BER instantaneously with the digital eye-diagrams. Direct measurements on this interconnects were also taken on a standard BER tester for verification. We found that the results of two methods were in the same order and within 50% accuracy. The integrated interconnects were investigated in an optoelectronic processing architecture of digital halftoning image processor. Error diffusion networks implemented by the inherently parallel nature of photonics promise to provide high quality digital halftoned images.

  5. Fabrication of high performance microlenses for an integrated capillary channel electrochromatograph with fluorescence detection

    International Nuclear Information System (INIS)

    Wendt, J. R.; Warren, M. E.; Sweatt, W. C.; Bailey, C. G.; Matzke, C. M.; Arnold, D. W.; Allerman, A. A.; Carter, T. R.; Asbill, R. E.; Samora, S.

    1999-01-01

    We describe the microfabrication of an extremely compact optical system as a key element in an integrated capillary channel electrochromatograph with fluorescence detection. The optical system consists of a vertical cavity surface-emitting laser (VCSEL), two high performance microlenses, and a commercial photodetector. The microlenses are multilevel diffractive optics patterned by electron beam lithography and etched by reactive ion etching in fused silica. The design uses substrate-mode propagation within the fused silica substrate. Two generations of optical subsystems are described. The first generation design has a 6 mm optical length and is integrated directly onto the capillary channel-containing substrate. The second generation design separates the optical system onto its own substrate module and the optical path length is further compressed to 3.5 mm. The first generation design has been tested using direct fluorescence detection with a 750 nm VCSEL pumping a 10 -4 M solution of CY-7 dye. The observed signal-to-noise ratio of better than 100:1 demonstrates that the background signal from scattered pump light is low despite the compact size of the optical system and is adequate for system sensitivity requirements. (c) 1999 American Vacuum Society

  6. Excimer Laser Technology

    CERN Document Server

    Basting, Dirk

    2005-01-01

    This comprehensive survey on Excimer Lasers investigates the current range of the technology, applications and devices of this commonly used laser source, as well as the future of new technologies, such as F2 laser technology. Additional chapters on optics, devices and laser systems complete this compact handbook. A must read for laser technology students, process application researchers, engineers or anyone interested in excimer laser technology. An effective and understandable introduction to the current and future status of excimer laser technology.

  7. Laser ion sources

    Energy Technology Data Exchange (ETDEWEB)

    Bykovskij, Yu

    1979-02-01

    The characteristics a laser source of multiply-ionized ions are described with regard to the interaction of laser radiation and matter, ion energy spectrum, angular ion distribution. The amount of multiple-ionization ions is evaluated. Out of laser source applications a laser injector of multiple-ionization ions and nuclei, laser mass spectrometry, laser X-ray microradiography, and a laser neutron generators are described.

  8. Dermatological laser treatment

    International Nuclear Information System (INIS)

    Moerk, N.J.; Austad, J.; Helland, S.; Thune, P.; Volden, G.; Falk, E.

    1991-01-01

    The article reviews the different lasers used in dermatology. Special emphasis is placed on the treatment of naevus flammeus (''portwine stain'') where lasers are the treatment of choice. Argon laser and pulsed dye laser are the main lasers used in vascular skin diseases, and the article focuses on these two types. Copper-vapour laser, neodymium-YAG laser and CO 2 laser are also presented. Information is provided about the availability of laser technology in the different health regions in Norway. 5 refs., 2 figs

  9. CO2-laser fusion

    International Nuclear Information System (INIS)

    Stark, E.E. Jr.

    1978-01-01

    The basic concept of laser fusion is described, with a set of requirements on the laser system. Systems and applications concepts are presented and discussed. The CO 2 laser's characteristics and advantages for laser fusion are described. Finally, technological issues in the development of CO 2 laser systems for fusion applications are discussed

  10. Project LASER

    Science.gov (United States)

    1990-01-01

    NASA formally launched Project LASER (Learning About Science, Engineering and Research) in March 1990, a program designed to help teachers improve science and mathematics education and to provide 'hands on' experiences. It featured the first LASER Mobile Teacher Resource Center (MTRC), is designed to reach educators all over the nation. NASA hopes to operate several MTRCs with funds provided by private industry. The mobile unit is a 22-ton tractor-trailer stocked with NASA educational publications and outfitted with six work stations. Each work station, which can accommodate two teachers at a time, has a computer providing access to NASA Spacelink. Each also has video recorders and photocopy/photographic equipment for the teacher's use. MTRC is only one of the five major elements within LASER. The others are: a Space Technology Course, to promote integration of space science studies with traditional courses; the Volunteer Databank, in which NASA employees are encouraged to volunteer as tutors, instructors, etc; Mobile Discovery Laboratories that will carry simple laboratory equipment and computers to provide hands-on activities for students and demonstrations of classroom activities for teachers; and the Public Library Science Program which will present library based science and math programs.

  11. Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

    Science.gov (United States)

    Zhang, Liping; Sawchuk, Alexander A.

    2001-12-01

    We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

  12. Laser Research Lab

    Data.gov (United States)

    Federal Laboratory Consortium — The Laser Research lab is thecenter for the development of new laser sources, nonlinear optical materials, frequency conversion processes and laser-based sensors for...

  13. Laser therapy (image)

    Science.gov (United States)

    A laser is used for many medical purposes. Because the laser beam is so small and precise, it enables ... without injuring surrounding tissue. Some uses of the laser are retinal surgery, excision of lesions, and cauterization ...

  14. Laser fusion: an overview

    International Nuclear Information System (INIS)

    Boyer, K.

    1975-01-01

    The laser fusion concept is described along with developments in neodymium and carbon dioxide lasers. Fuel design and fabrication are reviewed. Some spin-offs of the laser fusion program are discussed. (U.S.)

  15. Laser power supply

    International Nuclear Information System (INIS)

    Bernstein, D.

    1975-01-01

    The laser power supply includes a regulator which has a high voltage control loop based on a linear approximation of a laser tube negative resistance characteristic. The regulator has independent control loops for laser current and power supply high voltage

  16. Bleaching Dengan Teknologi Laser

    OpenAIRE

    Eliwaty

    2008-01-01

    Penulisan tentang bleaching dengan laser dimaksudkan untuk menambah wawasan serta pengetahuan dari pembaca di bidang kedokteran gigi. Macam-macam laser yang dipergunakan dalam bleaching yaitu argon, CO2 serta dioda laser. Contoh merek produk laser yaitu Blulaze, Dentcure untuk argonlaser, Novapulse untuk C02 serta Opus 5 untuk dioda laser. Laser bleaching hasilnya dapat dicapai dalam satu kunjungan saja, cepat, efisien namun biayanya relatif mahal, dapat menimbulkan burn, sensitivitas se...

  17. Laser safety at high profile laser facilities

    International Nuclear Information System (INIS)

    Barat, K.

    2010-01-01

    Complete text of publication follows. Laser safety has been an active concern of laser users since the invention of the laser. Formal standards were developed in the early 1970's and still continue to be developed and refined. The goal of these standards is to give users guidance on the use of laser and consistent safety guidance and requirements for laser manufacturers. Laser safety in the typical research setting (government laboratory or university) is the greatest challenge to the laser user and laser safety officer. This is due to two factors. First, the very nature of research can put the user at risk; consider active manipulation of laser optics and beam paths, and user work with energized systems. Second, a laser safety culture that seems to accept laser injuries as part of the graduate student educational process. The fact is, laser safety at research settings, laboratories and universities still has long way to go. Major laser facilities have taken a more rigid and serious view of laser safety, its controls and procedures. Part of the rationale for this is that these facilities draw users from all around the world presenting the facility with a work force of users coming from a wide mix of laser safety cultures. Another factor is funding sources do not like bad publicity which can come from laser accidents and a poor safety record. The fact is that injuries, equipment damage and lost staff time slow down progress. Hence high profile/large laser projects need to adapt a higher safety regimen both from an engineering and administrative point of view. This presentation will discuss all these points and present examples. Acknowledgement. This work has been supported by the University of California, Director, Office of Science.

  18. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  19. Laser Protection TIL

    Data.gov (United States)

    Federal Laboratory Consortium — The Laser Protection TIL conducts research and analysis of laser protection materials along with integration schemes. The lab's objectives are to limit energy coming...

  20. Laser Photochemistry.

    Science.gov (United States)

    1981-07-01

    inverted by the first, i.e., at the moment of time t = T, such that i = (2n+)lT, where 0 is the Rabi frequency (Oraevski et al., 1976). . classical... anisotropic molecule present. CW HeNe, Ar+ and Kr+ lasers are used, and the filter method is necessary because of time-scales lo8 - 10ll Hz. Some general...e.g., truncated harmonic oscillator, square well, spherically symmetric Morse or Lennard-Jones, anisotropic (angle-dependent) Morse or Lennard-Jones

  1. Laser Propulsion - Quo Vadis

    International Nuclear Information System (INIS)

    Bohn, Willy L.

    2008-01-01

    First, an introductory overview of the different types of laser propulsion techniques will be given and illustrated by some historical examples. Second, laser devices available for basic experiments will be reviewed ranging from low power lasers sources to inertial confinement laser facilities. Subsequently, a status of work will show the impasse in which the laser propulsion community is currently engaged. Revisiting the basic relations leads to new avenues in ablative and direct laser propulsion for ground based and space based applications. Hereby, special attention will be devoted to the impact of emerging ultra-short pulse lasers on the coupling coefficient and specific impulse. In particular, laser sources and laser propulsion techniques will be tested in microgravity environment. A novel approach to debris removal will be discussed with respect to the Satellite Laser Ranging (SRL) facilities. Finally, some non technical issues will be raised aimed at the future prospects of laser propulsion in the international community

  2. Laser safety and practice

    International Nuclear Information System (INIS)

    Low, K.S.

    1995-01-01

    Lasers are finding increasing routine applications in many areas of science, medicine and industry. Though laser radiation is non-ionizing in nature, the usage of high power lasers requires specific safety procedures. This paper briefly outlines the properties of laser beams and various safety procedures necessary in their handling and usage. (author)

  3. Diode lasers and arrays

    International Nuclear Information System (INIS)

    Streifer, W.

    1988-01-01

    This paper discusses the principles of operation of III-V semiconductor diode lasers, the use of distributed feedback, and high power laser arrays. The semiconductor laser is a robust, miniature, versatile device, which directly converts electricity to light with very high efficiency. Applications to pumping solid-state lasers and to fiber optic and point-to-point communications are reviewed

  4. Laser cladding with powder

    NARCIS (Netherlands)

    Schneider, M.F.; Schneider, Marcel Fredrik

    1998-01-01

    This thesis is directed to laser cladding with powder and a CO2 laser as heat source. The laser beam intensity profile turned out to be an important pa6 Summary rameter in laser cladding. A numerical model was developed that allows the prediction of the surface temperature distribution that is

  5. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  6. Visible Solid State Lasers

    NARCIS (Netherlands)

    Hikmet, R.A.M.

    2007-01-01

    Diode lasers can be found in various applications most notably in optical communication and optical storage. Visible lasers were until recently were all based on IR diode lasers. Using GaN, directly blue and violet emitting lasers have also been introduced to the market mainly in the area of optical

  7. Laser Microdissection.

    Science.gov (United States)

    Frost, Andra R; Eltoum, Isam-Eldin; Siegal, Gene P; Emmert-Buck, Michael R; Tangrea, Michael A

    2015-10-01

    Laser microdissection (LM) offers a relatively rapid and precise method of isolating and removing specified cells from complex tissues for subsequent analysis of their RNA, DNA, protein or metabolite content, thereby allowing assessment of the role of different cell types in the normal physiological or disease processes being studied. In this unit, protocols for the preparation of mammalian frozen tissues, fixed tissues, and cytologic specimens for LM, including tissue freezing, tissue processing and paraffin embedding, histologic sectioning, cell processing, hematoxylin and eosin staining, immunohistochemistry, and image-guided cell targeting are presented. Also provided are recipes for generating lysis buffers for the recovery of nucleic acids and proteins. The Commentary section addresses the types of specimens that can be utilized for LM and approaches to staining of specimens for cell visualization. Emphasis is placed on the preparation of tissue or cytologic specimens as this is critical to effective LM. Copyright © 2015 John Wiley & Sons, Inc.

  8. Laser EXAFS

    International Nuclear Information System (INIS)

    Mallozzi, P.J.; Epstein, H.M.; Schwenzel, R.E.; Campbell, B.E.

    1983-01-01

    Apparatus for obtaining EXAFS data of a material, comprising means for directing radiant energy from a laser onto a target in such manner as to produce X-rays at the target of a selected spectrum and intensity, suitable for obtaining the EXAFS spectrum of the material, means for directing X-rays from the target onto spectral dispersive means so located as to direct the spectrally resolved X-rays therefrom onto recording means, and means for positioning a sample of material in the optical path of the X-rays, the recording means providing a reference spectrum of X-rays not affected by the sample and absorption spectrum of X-rays modified by transmission through the sample

  9. Multibeam Fibre Laser Cutting

    DEFF Research Database (Denmark)

    Olsen, Flemming Ove

    The appearance of the high power high brilliance fibre laser has opened for new possibilities in laser materials processing. In laser cutting this laser has demonstrated high cutting performance compared to the dominating cutting laser, the CO2-laser. However, quality problems in fibre......-laser cutting have until now limited its application in metal cutting. In this paper the first results of proof-of-principle studies applying a new approach (patent pending) for laser cutting with high brightness short wavelength lasers will be presented. In the approach, multi beam patterns are applied...... to control the melt flow out of the cut kerf resulting in improved cut quality in metal cutting. The beam patterns in this study are created by splitting up beams from 2 single mode fibre lasers and combining these beams into a pattern in the cut kerf. The results are obtained with a total of 550 W of single...

  10. Multibeam fiber laser cutting

    DEFF Research Database (Denmark)

    Olsen, Flemming Ove; Hansen, Klaus Schütt; Nielsen, Jakob Skov

    2009-01-01

    The appearance of the high power high brilliance fiber laser has opened for new possibilities in laser materials processing. In laser cutting this laser has demonstrated high cutting performance compared to the dominating Cutting laser, the CO2 laser. However, quality problems in fiber......-laser cutting have until now limited its application to metal cutting. In this paper the first results of proof-of-principle Studies applying a new approach (patent pending) for laser cutting with high brightness and short wavelength lasers will be presented. In the approach, multibeam patterns are applied...... to control the melt flow out of the cut kerf resulting in improved cut quality in metal cutting. The beam patterns in this study are created by splitting up beams from two single mode fiber lasers and combining these beams into a pattern in the cut kerf. The results are obtained with a total of 550 W...

  11. History and principle of lasers

    International Nuclear Information System (INIS)

    Townes, Ch.H.; Schwob, C.; Julien, J.; Forget, S.; Robert-Philip, I.; Balcou, Ph.

    2010-01-01

    In the first article C.H. Townes, the inventor of the maser, describes the work and ideas that led to the invention of the laser. The second article explains how a laser operate and the third article reviews the main different types of laser: solid lasers, gas lasers, diode lasers and dye lasers

  12. Technological laser application

    International Nuclear Information System (INIS)

    Shia, D.O.; Kollen, R.; Rods, U.

    1980-01-01

    Problems of the technological applications of lasers are stated in the popular form. Main requirements to a technological laser as well as problems arising in designing any system using lasers have been considered. Areas of the laser applications are described generally: laser treatment of materials, thermal treatment, welding, broach and drilling of holes, scribing, microtreatment and adjustment of resistors, material cutting, investigations into controlled thermonuclear fussion

  13. Laser ablation principles and applications

    CERN Document Server

    1994-01-01

    Laser Ablation provides a broad picture of the current understanding of laser ablation and its many applications, from the views of key contributors to the field. Discussed are in detail the electronic processes in laser ablation of semiconductors and insulators, the post-ionization of laser-desorbed biomolecules, Fourier-transform mass spectroscopy, the interaction of laser radiation with organic polymers, laser ablation and optical surface damage, laser desorption/ablation with laser detection, and laser ablation of superconducting thin films.

  14. New power lasers

    International Nuclear Information System (INIS)

    Yamanaka, Masanobu; Daido, Hiroyuki; Imasaki, Kazuo.

    1989-01-01

    As the new power lasers which are expected to exert large extending effect to the fields of advanced science and technology including precision engineering as well as laser nuclear fusion, LD-excited solid laser, X-ray laser and free electron laser are taken up and outlined. Recently, the solid laser using high power output, high efficiency semiconductor laser as the exciting beam source has been developed. This is called laser diode (LD)-excited solid laser, and the heightening of power output and efficiency and the extension of life are planned. Its present status and application to medical use, laser machining, laser soldering and so on are described. In 1960, the laser in visible region appeared, however in 1985, the result of observing induced emission beam by electron collision exciting method was reported in USA. In the wavelength range of 200 A, holography and contact X-ray microscope applications were verified. The various types of soft X-ray laser and the perspective hereafter are shown. The principle of free electron laser is explained. In the free electron laser, wavelength can be changed by varying electron beam energy, the period of wiggler magnetic field and the intensity of magnetic field. Further, high efficiency and large power output are possible. Its present status, application and the perspective hereafter are reported. (K.I.)

  15. Electrical addressing and temporal tweezing of localized pulses in passively mode-locked semiconductor lasers

    Science.gov (United States)

    Javaloyes, J.; Camelin, P.; Marconi, M.; Giudici, M.

    2017-08-01

    This work presents an overview of a combined experimental and theoretical analysis on the manipulation of temporal localized structures (LSs) found in passively Vertical-Cavity Surface-Emitting Lasers coupled to resonant saturable absorber mirrors. We show that the pumping current is a convenient parameter for manipulating the temporal Localized Structures, also called localized pulses. While short electrical pulses can be used for writing and erasing individual LSs, we demonstrate that a current modulation introduces a temporally evolving parameter landscape allowing to control the position and the dynamics of LSs. We show that the localized pulses drifting speed in this landscape depends almost exclusively on the local parameter value instead of depending on the landscape gradient, as shown in quasi-instantaneous media. This experimental observation is theoretically explained by the causal response time of the semiconductor carriers that occurs on an finite timescale and breaks the parity invariance along the cavity, thus leading to a new paradigm for temporal tweezing of localized pulses. Different modulation waveforms are applied for describing exhaustively this paradigm. Starting from a generic model of passive mode-locking based upon delay differential equations, we deduce the effective equations of motion for these LSs in a time-dependent current landscape.

  16. IV-VI mid-IR tunable lasers and detectors with external resonant cavities

    Science.gov (United States)

    Zogg, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Quack, N.; Blunier, S.; Dual, J.

    2009-08-01

    Wavelength tunable emitters and detectors in the mid-IR wavelength region allow applications including thermal imaging and spectroscopy. Such devices may be realized using a resonant cavity. By mechanically changing the cavity length with MEMS mirror techniques, the wavelengths may be tuned over a considerable range. Vertical external cavity surface emitting lasers (VECSEL) may be applied for gas spectroscopy. Resonant cavity enhanced detectors (RCED) are sensitive at the cavity resonance only. They may be applied for low resolution spectroscopy, and, when arrays of such detectors are realized, as multicolor IR-FPA or IR-AFPA (IR-adaptive focal plane arrays). We review mid-infrared RCEDs and VECSELs using narrow gap IV-VI (lead chalcogenide) materials like PbTe and PbSe as the active medium. IV-VIs are fault tolerant and allow easy wavelength tuning. The VECSELs operate up to above room temperature and emit in the 4 - 5 μm range with a PbSe active layer. RCEDs with PbTe absorbing layers above 200 K operating temperature have higher sensitivities than the theoretical limit for a similar broad-band detector coupled with a passive tunable band-filter.

  17. Laser applications in materials processing

    International Nuclear Information System (INIS)

    Ready, J.F.

    1980-01-01

    The seminar focused on laser annealing of semiconductors, laser processing of semiconductor devices and formation of coatings and powders, surface modification with lasers, and specialized laser processing methods. Papers were presented on the theoretical analysis of thermal and mass transport during laser annealing, applications of scanning continuous-wave and pulsed lasers in silicon technology, laser techniques in photovoltaic applications, and the synthesis of ceramic powders from laser-heated gas-phase reactants. Other papers included: reflectance changes of metals during laser irradiation, surface-alloying using high-power continuous lasers, laser growth of silicon ribbon, and commercial laser-shock processes

  18. Raman fiber lasers

    CERN Document Server

    2017-01-01

    This book serves as a comprehensive, up-to-date reference about this cutting-edge laser technology and its many new and interesting developments. Various aspects and trends of Raman fiber lasers are described in detail by experts in their fields. Raman fiber lasers have progressed quickly in the past decade, and have emerged as a versatile laser technology for generating high power light sources covering a spectral range from visible to mid-infrared. The technology is already being applied in the fields of telecommunication, astronomy, cold atom physics, laser spectroscopy, environmental sensing, and laser medicine. This book covers various topics relating to Raman fiber laser research, including power scaling, cladding and diode pumping, cascade Raman shifting, single frequency operation and power amplification, mid-infrared laser generation, specialty optical fibers, and random distributed feedback Raman fiber lasers. The book will appeal to scientists, students, and technicians seeking to understand the re...

  19. Ceramic Laser Materials

    Directory of Open Access Journals (Sweden)

    Guillermo Villalobos

    2012-02-01

    Full Text Available Ceramic laser materials have come a long way since the first demonstration of lasing in 1964. Improvements in powder synthesis and ceramic sintering as well as novel ideas have led to notable achievements. These include the first Nd:yttrium aluminum garnet (YAG ceramic laser in 1995, breaking the 1 KW mark in 2002 and then the remarkable demonstration of more than 100 KW output power from a YAG ceramic laser system in 2009. Additional developments have included highly doped microchip lasers, ultrashort pulse lasers, novel materials such as sesquioxides, fluoride ceramic lasers, selenide ceramic lasers in the 2 to 3 μm region, composite ceramic lasers for better thermal management, and single crystal lasers derived from polycrystalline ceramics. This paper highlights some of these notable achievements.

  20. Infrared laser system

    International Nuclear Information System (INIS)

    Cantrell, C.D.; Carbone, R.J.

    1977-01-01

    An infrared laser system and method for isotope separation may comprise a molecular gas laser oscillator to produce a laser beam at a first wavelength, Raman spin flip means for shifting the laser to a second wavelength, a molecular gas laser amplifier to amplify said second wavelength laser beam to high power, and optical means for directing the second wavelength, high power laser beam against a desired isotope for selective excitation thereof in a mixture with other isotopes. The optical means may include a medium which shifts the second wavelength high power laser beam to a third wavelength, high power laser beam at a wavelength coincidental with a corresponding vibrational state of said isotope and which is different from vibrational states of other isotopes in the gas mixture

  1. Ceramic Laser Materials

    Science.gov (United States)

    Sanghera, Jasbinder; Kim, Woohong; Villalobos, Guillermo; Shaw, Brandon; Baker, Colin; Frantz, Jesse; Sadowski, Bryan; Aggarwal, Ishwar

    2012-01-01

    Ceramic laser materials have come a long way since the first demonstration of lasing in 1964. Improvements in powder synthesis and ceramic sintering as well as novel ideas have led to notable achievements. These include the first Nd:yttrium aluminum garnet (YAG) ceramic laser in 1995, breaking the 1 KW mark in 2002 and then the remarkable demonstration of more than 100 KW output power from a YAG ceramic laser system in 2009. Additional developments have included highly doped microchip lasers, ultrashort pulse lasers, novel materials such as sesquioxides, fluoride ceramic lasers, selenide ceramic lasers in the 2 to 3 μm region, composite ceramic lasers for better thermal management, and single crystal lasers derived from polycrystalline ceramics. This paper highlights some of these notable achievements. PMID:28817044

  2. Spectroscopic and imaging diagnostics of pulsed laser deposition laser plasmas

    International Nuclear Information System (INIS)

    Thareja, Raj K.

    2002-01-01

    An overview of laser spectroscopic techniques used in the diagnostics of laser ablated plumes used for thin film deposition is given. An emerging laser spectroscopic imaging technique for the laser ablation material processing is discussed. (author)

  3. Lasers in periodontics.

    Science.gov (United States)

    Elavarasu, Sugumari; Naveen, Devisree; Thangavelu, Arthiie

    2012-08-01

    Laser is one of the most captivating technologies in dental practice since Theodore Maiman in 1960 invented the ruby laser. Lasers in dentistry have revolutionized several areas of treatment in the last three and a half decades of the 20(th) century. Introduced as an alternative to mechanical cutting device, laser has now become an instrument of choice in many dental applications. Evidence suggests its use in initial periodontal therapy, surgery, and more recently, its utility in salvaging implant opens up a wide range of applications. More research with better designs are a necessity before lasers can become a part of dental armamentarium. This paper gives an insight to laser in periodontics.

  4. Excimer laser applications

    International Nuclear Information System (INIS)

    Fantoni, R.

    1988-01-01

    This lecture deals with laser induced material photoprocessing, especially concerning those processes which are initiated by u.v. lasers (mostly excimer laser). Advantages of using the u.v. radiation emitted by excimer lasers, both in photophysical and photochemical processes of different materials, are discussed in detail. Applications concerning microelectronics are stressed with respect to other applications in different fields (organic chemistry, medicine). As further applications of excimer lasers, main spectroscopic techniques for ''on line'' diagnostics which employ excimer pumped dye lasers, emitting tunable radiation in the visible and near u.v. are reviewed

  5. Lasers in chemical processing

    International Nuclear Information System (INIS)

    Davis, J.I.

    1982-01-01

    The high cost of laser energy is the crucial issue in any potential laser-processing application. It is expensive relative to other forms of energy and to most bulk chemicals. We show those factors that have previously frustrated attempts to find commercially viable laser-induced processes for the production of materials. Having identified the general criteria to be satisfied by an economically successful laser process and shown how these imply the laser-system requirements, we present a status report on the uranium laser isotope separation (LIS) program at the Lawrence Livermore National Laboratory

  6. Laser in urology. Laser i urologien

    Energy Technology Data Exchange (ETDEWEB)

    Breisland, H.O. (Aker Sykehus, Oslo (Norway))

    1991-09-01

    The neodymium YAG laser is particularly suited for endoscopic urologic surgery because the YAG laser light can be conducted in flexible fibers. Superficial bladder tumours can be treated under local anaesthesia in the outpatient department. The frequency of local recurrences is low, significantly lower than after electrosection or electrocoagulation. Selected cases of T2-muscle invasive bladder tumours can be cured with laser coagulation applied subsequently to transurethral resection. Combined treatment with electrosection and laser coagulation of localized prostatic cancer is a promising method which compares favourably with results obtained by other treatment modalities. Tumours in the upper urinary tract can be laser-treated through ureteroscopes or nephroscopes, but the treatment should be limited to low stage, low grade tumours. Laser is the treatment of choice for intraurethral condylomatas. Laser treatment of penil carcinoma gives excellent cosmetic and functional results and few local recurrences. Laser lithotripsy is a new technique for treatment of ureteric stones and photodynamic laser therapy is a promising tecnique for treatment of carcinoma in situ in the bladder empithelium. However, neither of these techniques are available for clinical use in Norway as yet. 17 refs., 3 figs., 1 tabs.

  7. Laser materials processing with diode lasers

    OpenAIRE

    Li, Lin; Lawrence, Jonathan; Spencer, Julian T.

    1996-01-01

    Laser materials processing is currently dominated by CO2, Nd-YAG and Excimer lasers. Continuous advances in semiconductor laser technology over the last decade have increased the average power output of the devices annualy by two fold, resulting in the commercial availability of the diode lasers today with delivery output powers in excess of 60W in CW mode and 5kW in qasi-CW mode. The advantages of compactness, high reliability, high efficiency and potential low cost, due to the mass producti...

  8. 1982 laser program annual report

    International Nuclear Information System (INIS)

    Hendricks, C.D.; Grow, G.R.

    1983-08-01

    This annual report covers the following eight sections: (1) laser program review, (2) laser systems and operation, (3) target design, (4) target fabrication, (5) fusion experiments program, (6) Zeus laser project, (7) laser research and development, and (8) energy applications

  9. Photonic bandgap fiber lasers and multicore fiber lasers for next generation high power lasers

    DEFF Research Database (Denmark)

    Shirakawa, A.; Chen, M.; Suzuki, Y.

    2014-01-01

    Photonic bandgap fiber lasers are realizing new laser spectra and nonlinearity mitigation that a conventional fiber laser cannot. Multicore fiber lasers are a promising tool for power scaling by coherent beam combination. © 2014 OSA....

  10. Laser in operative dentistry

    Directory of Open Access Journals (Sweden)

    E. Yasini

    1994-06-01

    Full Text Available Today laser has a lot of usage in medicine and dentistry. In the field of dentistry, laser is used in soft tissue surgery, sterilization of canals (in root canal therapy and in restorative dentistry laser is used for cavity preparation, caries removal, sealing the grooves (in preventive dentistry, etching enamel and dentin, composite polymerization and removal of tooth sensitivity. The use of Co2 lasers and Nd: YAG for cavity preparation, due to creating high heat causes darkness and cracks around the region of laser radiation. Also due to high temperature of these lasers, pulp damage is inevitable. So today, by using the Excimer laser especially the argon floride type with a wavelength of 193 nm, the problem of heat stress have been solved, but the use of lasers in dentistry, especially for cavity preparation needs more researches and evaluations.

  11. Laser for fusion energy

    International Nuclear Information System (INIS)

    Holzrichter, J.F.

    1995-01-01

    Solid state lasers have proven to be very versatile tools for the study and demonstration of inertial confinement fusion principles. When lasers were first contemplated to be used for the compression of fusion fuel in the late 1950s, the laser output energy levels were nominally one joule and the power levels were 10 3 watts (pulse duration's of 10 -3 sec). During the last 25 years, lasers optimized for fusion research have been increased in power to typically 100,000 joules with power levels approaching 10 14 watts. As a result of experiments with such lasers at many locations, DT target performance has been shown to be consistent with high gain target output. However, the demonstration of ignition and gain requires laser energies of several megajoules. Laser technology improvements demonstrated over the past decade appear to make possible the construction of such multimegajoule lasers at affordable costs. (author)

  12. Radiological protection against lasers

    Energy Technology Data Exchange (ETDEWEB)

    Ballereau, P

    1974-04-01

    A brief description of the biological effects of laser beams is followed by a review of the factors involved in eye and skin damage (factors linked with the nature of lasers and those linked with the organ affected) and a discussion of the problems involved in the determination of threshold exposure levels. Preventive measures are recommended, according to the type of laser (high-energy pulse laser, continuous laser, gas laser). No legislation on the subject exists in France or in Europe. Types of lasers marketed, threshold exposure levels for eye and skin, variations of admissible exposure levels according to wavelength, etc. are presented in tabular form. Nomogram for determination of safe distance for direct vision of a laser is included.

  13. Advances in Fiber Lasers

    National Research Council Canada - National Science Library

    Morse, T

    1999-01-01

    Most of the time of this contract has been devoted toward improvements in optical fiber lasers and toward gathering experience to improve our program in high power, cladding pumped optical fiber lasers...

  14. Laser Processing and Chemistry

    CERN Document Server

    Bäuerle, Dieter

    2011-01-01

    This book gives an overview of the fundamentals and applications of laser-matter interactions, in particular with regard to laser material processing. Special attention is given to laser-induced physical and chemical processes at gas-solid, liquid-solid, and solid-solid interfaces. Starting with the background physics, the book proceeds to examine applications of lasers in “standard” laser machining and laser chemical processing (LCP), including the patterning, coating, and modification of material surfaces. This fourth edition has been enlarged to cover the rapid advances in the understanding of the dynamics of materials under the action of ultrashort laser pulses, and to include a number of new topics, in particular the increasing importance of lasers in various different fields of surface functionalizations and nanotechnology. In two additional chapters, recent developments in biotechnology, medicine, art conservation and restoration are summarized. Graduate students, physicists, chemists, engineers, a...

  15. Fiber Laser Array

    National Research Council Canada - National Science Library

    Simpson, Thomas

    2002-01-01

    ...., field-dependent, loss within the coupled laser array. During this program, Jaycor focused on the construction and use of an experimental apparatus that can be used to investigate the coherent combination of an array of fiber lasers...

  16. ISTEF Laser Radar Program

    National Research Council Canada - National Science Library

    Stryjewski, John

    1998-01-01

    The BMDO Innovative Science and Technology Experimentation Facility (BMDO/ISTEF) laser radar program is engaged in an ongoing program to develop and demonstrate advanced laser radar concepts for Ballistic Missile Defense (BMD...

  17. Wavelength sweepable laser source

    DEFF Research Database (Denmark)

    2014-01-01

    Wavelength sweepable laser source is disclosed, wherein the laser source is a semiconductor laser source adapted for generating laser light at a lasing wavelength. The laser source comprises a substrate, a first reflector, and a second reflector. The first and second reflector together defines...... and having a rest position, the second reflector and suspension together defining a microelectromechanical MEMS oscillator. The MEMS oscillator has a resonance frequency and is adapted for oscillating the second reflector on either side of the rest position.; The laser source further comprises electrical...... connections adapted for applying an electric field to the MEMS oscillator. Furthermore, a laser source system and a method of use of the laser source are disclosed....

  18. Laser surgery - skin

    Science.gov (United States)

    ... Bleeding Problem not going away Infection Pain Scarring Skin color changes Some laser surgery is done when you are asleep and ... TG, Elston DM, eds. Andrews' Diseases of the Skin: Clinical ... lasers, lights, and tissue interactions. In: Hruza GJ, Avram ...

  19. Laser in operative dentistry

    OpenAIRE

    E. Yasini; Gh. Rahbari; A. Matorian

    1994-01-01

    Today laser has a lot of usage in medicine and dentistry. In the field of dentistry, laser is used in soft tissue surgery, sterilization of canals (in root canal therapy) and in restorative dentistry laser is used for cavity preparation, caries removal, sealing the grooves (in preventive dentistry), etching enamel and dentin, composite polymerization and removal of tooth sensitivity. The use of Co2 lasers and Nd: YAG for cavity preparation, due to creating high heat causes darkness and cracks...

  20. Tunable laser optics

    CERN Document Server

    Duarte, FJ

    2015-01-01

    This Second Edition of a bestselling book describes the optics and optical principles needed to build lasers. It also highlights the optics instrumentation necessary to characterize laser emissions and focuses on laser-based optical instrumentation. The book emphasizes practical and utilitarian aspects of relevant optics including the essential theory. This revised, expanded, and improved edition contains new material on tunable lasers and discusses relevant topics in quantum optics.

  1. Laser cutting system

    Science.gov (United States)

    Dougherty, Thomas J

    2015-03-03

    A workpiece cutting apparatus includes a laser source, a first suction system, and a first finger configured to guide a workpiece as it moves past the laser source. The first finger includes a first end provided adjacent a point where a laser from the laser source cuts the workpiece, and the first end of the first finger includes an aperture in fluid communication with the first suction system.

  2. Application of Various Lasers to Laser Trimming Resistance System

    Institute of Scientific and Technical Information of China (English)

    SUN Ji-feng

    2007-01-01

    Though the laser trimming resistance has been an old laser machining industry for over 30 years, the development of technology brings new alternative lasers which can be used for the traditional machining. The paper describes application of various lasers to laser trimming resistance system including early traditional krypton arc lamp pumped Nd:YAG to laser, modern popular diode pumped solid state laser and the present advanced harmonic diode pumped solid state laser. Using the new alternative lasers in the laser trimming resistance system can dramatically improve the yields and equipment performance.

  3. Laser technologies for laser accelerators. Annual report

    International Nuclear Information System (INIS)

    1985-01-01

    The primary result of the work reported is the determination of laser system architectures that satsify the requirements of high luminosity, high energy (about 1 TeV), electron accelerators. It has been found that high laser efficiency is a very hard driver for these accelerators as the total average laser output optical power is likely to fall above 10 MW. The luminosity requires rep rates in the kHz range, and individual pulse lengths in the 1-10 psec range are required to satisfy acceleration gradient goals. CO 2 and KrF lasers were chosen for study because of their potential to simultaneously satisfy the given requirements. Accelerator luminosity is reviewed, and requirements on laser system average power and rep rate are determined as a function of electron beam bunch parameters. Laser technologies are reviewed, including CO 2 , excimers, solid state, and free electron lasers. The proposed accelerator mechanisms are summarized briefly. Work on optical transport geometries for near and far field accelerators are presented. Possible exploitation of the CO 2 and DrF laser technology to generate the required pulse lengths, rep rates, and projected efficiencies is illustrated and needed development work is suggested. Initial efforts at developing a 50 GeV benchmark conceptual design and a 100 MeV demonstration experiment conceptual design are presented

  4. Laser induced pyrolysis techniques

    International Nuclear Information System (INIS)

    Vanderborgh, N.E.

    1976-01-01

    The application of laser pyrolysis techniques to the problems of chemical analysis is discussed. The processes occurring during laser pyrolysis are first briefly reviewed. The problems encountered in laser pyrolysis gas chromatography are discussed using the analysis of phenanthrene and binary hydrocarbons. The application of this technique to the characterization of naturally occurring carbonaceous material such as oil shales and coal is illustrated

  5. Solar pumped laser

    Science.gov (United States)

    Lee, J. H.; Hohl, F.; Weaver, W. R. (Inventor)

    1984-01-01

    A solar pumped laser is described in which the lasant is a gas that will photodissociate and lase when subjected to sunrays. Sunrays are collected and directed onto the gas lasant to cause it to lase. Applications to laser propulsion and laser power transmission are discussed.

  6. Introducing the Yellow Laser

    Science.gov (United States)

    Lincoln, James

    2018-01-01

    The author has acquired a yellow laser with the specific wavelength of 589 nm. Because this is the first time such a laser has been discussed in this journal, I feel it is appropriate to provide a discussion of its function and capabilities. Normal laser safety should be employed, such as not pointing it into eyes or at people, and using eye…

  7. Coatings for laser fusion

    International Nuclear Information System (INIS)

    Lowdermilk, W.H.

    1981-01-01

    Optical coatings are used in lasers systems for fusion research to control beam propagation and reduce surface reflection losses. The performance of coatings is important in the design, reliability, energy output, and cost of the laser systems. Significant developments in coating technology are required for future lasers for fusion research and eventual power reactors

  8. uv dye lasers

    International Nuclear Information System (INIS)

    Abakumov, G.A.; Fadeev, V.V.; Khokhlov, R.V.; Simonov, A.P.

    1975-01-01

    The most important property of visible dye lasers, that is, continuous wavelength tuning, stimulated the search for dyes capable to lase in uv. They were found in 1968. Now the need for tunable uv lasers for applications in spectroscopy, photochemistry, isotope separation, remote air and sea probing, etc. is clearly seen. A review of some recent advances in uv dye lasers is reviewed

  9. LaserFest Celebration

    Energy Technology Data Exchange (ETDEWEB)

    Dr. Alan Chodos; Elizabeth A. Rogan

    2011-08-25

    LaserFest was the yearlong celebration, during 2010, of the 50th anniversary of the demonstration of the first working laser. The goals of LaserFest were: to highlight the impact of the laser in its manifold commercial, industrial and medical applications, and as a tool for ongoing scientific research; to use the laser as one example that illustrates, more generally, the route from scientific innovation to technological application; to use the laser as a vehicle for outreach, to stimulate interest among students and the public in aspects of physical science; to recognize and honor the pioneers who developed the laser and its many applications; to increase awareness among policymakers of the importance of R&D funding as evidenced by such technology as lasers. One way in which LaserFest sought to meet its goals was to encourage relevant activities at a local level all across the country -- and also abroad -- that would be identified with the larger purposes of the celebration and would carry the LaserFest name. Organizers were encouraged to record and advertise these events through a continually updated web-based calendar. Four projects were explicitly detailed in the proposals: 1) LaserFest on the Road; 2) Videos; 3) Educational material; and 4) Laser Days.

  10. Laser beam cutting method. Laser ko ni yoru kaitai koho

    Energy Technology Data Exchange (ETDEWEB)

    Kutsumizu, A. (Obayashi Corp., Osaka (Japan))

    1991-07-01

    In this special issue paper concerning the demolition of concrete structures, was introduced a demolition of concrete structures using laser, of which practical application is expected due to the remarkable progress of generating power and efficiency of laser radiator. The characteristics of laser beam which can give a temperature of one million centigrade at the irradiated spot, the laser radiator consisting of laser medium, laser resonator and pumping apparatus, and the laser kinds for working, such as CO{sub 2} laser, YAG laser and CO laser, were described. The basic constitution of laser cutting equipment consisting of large generating power radiator, beam transmitter, beam condenser, and nozzle for working was also illustrated. Furthermore, strong and weak points in the laser cutting for concrete and reinforcement were enumerated. Applications of laser to cutting of reinforced and unreinforced concrete constructions were shown, and the concept and safety measure for application of laser to practical demolition was discussed. 5 refs., 8 figs.

  11. Introduction to laser technology

    CERN Document Server

    Hitz, C Breck; Hecht, Jeff; Hitz, C Breck; John Wiley & Sons

    2001-01-01

    Electrical Engineering Introduction to Laser Technology , Third Edition. Would you like to know how a laser works, and how it can be modified for your own specific tasks? This intuitive third edition-previously published as Understanding Laser Technology , First and Second Editions-introduces engineers, scientists, technicians, and novices alike to the world of modern lasers, without delving into the mathematical details of quantum electronics. It is the only introductory text on the market today that explains the underlying physics and engineering applicable to all lasers. A unique combinatio.

  12. Quantum well lasers

    CERN Document Server

    Zory, Jr, Peter S; Kelley, Paul

    1993-01-01

    This book provides the information necessary for the reader to achieve a thorough understanding of all aspects of QW lasers - from the basic mechanism of optical gain, through the current technolgoical state of the art, to the future technologies of quantum wires and quantum dots. In view of the growing importance of QW lasers, this book should be read by all those with an active interest in laser science and technology, from the advanced student to the experienced laser scientist.* The first comprehensive book-length treatment of quantum well lasers* Provides a detailed treatment

  13. Coherent laser beam combining

    CERN Document Server

    Brignon, Arnaud

    2013-01-01

    Recently, the improvement of diode pumping in solid state lasers and the development of double clad fiber lasers have allowed to maintain excellent laser beam quality with single mode fibers. However, the fiber output power if often limited below a power damage threshold. Coherent laser beam combining (CLBC) brings a solution to these limitations by identifying the most efficient architectures and allowing for excellent spectral and spatial quality. This knowledge will become critical for the design of the next generation high-power lasers and is of major interest to many industrial, environme

  14. The laser thermonuclear fusion

    International Nuclear Information System (INIS)

    Coutant, J.; Dautray, R.; Decroisette, M.; Watteau, J.P.

    1987-01-01

    Principle of the thermonuclear fusion by inertial confinement: required characteristics of the deuterium-tritium plasma and of the high power lasers to be used Development of high power lasers: active media used; amplifiers; frequency conversion; beam quality; pulse conditioning; existing large systems. The laser-matter interaction: collision and collective interaction of the laser radiation with matter; transport of the absorbed energy; heating and compression of deuterium-tritium; diagnoses and their comparison with the numerical simulation of the experiment; performances. Conclusions: difficulties to overcome; megajoule lasers; other energy source: particles beams [fr

  15. Laser Cutting, Development Trends

    DEFF Research Database (Denmark)

    Olsen, Flemming Ove

    1999-01-01

    In this paper a short review of the development trends in laser cutting will be given.The technology, which is the fastest expanding industrial production technology will develop in both its core market segment: Flat bed cutting of sheet metal, as it will expand in heavy industry and in cutting...... of 3-dimensional shapes.The CO2-laser will also in the near future be the dominating laser source in the market, although the new developments in ND-YAG-lasers opens for new possibilities for this laser type....

  16. Lasers in space.

    CSIR Research Space (South Africa)

    Michaelis, MM

    2008-04-01

    Full Text Available cube, laser beam reflectors, placed on the Moon half a century ago. These early achievements will soon be followed by a plethora of experiments involving lasers in low earth orbit (LEO) or at Lagrange points. And not much later, laser communications... will stretch out as far as Mars and beyond. One important low Earth orbit (LEO) application is the removal of space debris by Earth based or LEO relayed lasers as promoted by Phipps et al.3. Another is military communication. The prominent L1 laser space...

  17. Tunable laser applications

    CERN Document Server

    Duarte, FJ

    2008-01-01

    Introduction F. J. Duarte Spectroscopic Applications of Tunable Optical Parametric Oscillators B. J. Orr, R. T. White, and Y. He Solid-State Dye Lasers Costela, I. García-Moreno, and R. Sastre Tunable Lasers Based on Dye-Doped Polymer Gain Media Incorporating Homogeneous Distributions of Functional Nanoparticles F. J. Duarte and R. O. James Broadly Tunable External-Cavity Semiconductor Lasers F. J. Duarte Tunable Fiber Lasers T. M. Shay and F. J. Duarte Fiber Laser Overview and Medical Applications

  18. Influence of oxidation treatment on ballistic electron surface-emitting display of porous silicon

    International Nuclear Information System (INIS)

    Du, Wentao; Zhang, Xiaoning; Zhang, Yujuan; Wang, Wenjiang; Duan, Xiaotao

    2012-01-01

    Two groups of porous silicon (PS) samples are treated by rapid thermal oxidation (RTO) and electrochemical oxidation (ECO), respectively. Scanning electron microscopy images show that PS samples are segmented into two layers. Oxidized film layer is formed on the top surface of PS samples treated by RTO while at the bottom of PS samples treated by ECO. Both ECO and RTO treatment can make emission current density, diode current density, and emission efficiency of PS increase with the bias voltage increasing. The emission current density and the field emission enhancement factor β of PS sample treated by RTO are larger than that treated by ECO. The Fowler–Nordheim curves of RTO and ECO samples are linear which indicates that high electric field exists on the oxidized layer and field emission occurs whether PS is treated by RTO or ECO.

  19. Generation of tunable narrow-band surface-emitted terahertz radiation in periodically poled lithium niobate.

    Science.gov (United States)

    Weiss, C; Torosyan, G; Avetisyan, Y; Beigang, R

    2001-04-15

    Generation of tunable narrow-band terahertz (THz) radiation perpendicular to the surface of periodically poled lithium niobate by optical rectification of femtosecond pulses is reported. The generated THz radiation can be tuned by use of different poling periods and different observation angles, limited only by the available bandwidth of the pump pulse. Typical bandwidths were 50-100 GHz, depending on the collection angle and the number of periods involved.

  20. Monolithic beam steering in a mid-infrared, surface-emitting, photonic integrated circuit.

    Science.gov (United States)

    Slivken, Steven; Wu, Donghai; Razeghi, Manijeh

    2017-08-16

    The mid-infrared (2.5 < λ < 25 μm) spectral region is utilized for many purposes, such as chemical/biological sensing, free space communications, and illuminators/countermeasures. Compared to near-infrared optical systems, however, mid-infrared component technology is still rather crude, with isolated components exhibiting limited functionality. In this manuscript, we make a significant leap forward in mid-infrared technology by developing a platform which can combine functions of multiple mid-infrared optical elements, including an integrated light source. In a single device, we demonstrate wide wavelength tuning (240 nm) and beam steering (17.9 degrees) in the mid-infrared with a significantly reduced beam divergence (down to 0.5 degrees). The architecture is also set up to be manufacturable and testable on a wafer scale, requiring no cleaved facets or special mirror coating to function.

  1. New solid laser: Ceramic laser. From ultra stable laser to ultra high output laser

    International Nuclear Information System (INIS)

    Ueda, Kenichi

    2006-01-01

    An epoch-making solid laser is developed. It is ceramic laser, polycrystal, which is produced as same as glass and shows ultra high output. Ti 3+ :Al 2 O 3 laser crystal and the CPA (chirped pulse amplification) technique realized new ultra high output lasers. Japan has developed various kinds of ceramic lasers, from 10 -2 to 67 x 10 3 w average output, since 1995. These ceramic lasers were studied by gravitational radiation astronomy. The scattering coefficient of ceramic laser is smaller than single crystals. The new fast ignition method is proposed by Institute of Laser Engineering of Osaka University, Japan. Ultra-intense short pulse laser can inject the required energy to the high-density imploded core plasma within the core disassembling time. Ti 3+ :Al 2 O 3 crystal for laser, ceramic YAG of large caliber for 100 kW, transparent laser ceramic from nano-crystals, crystal grain and boundary layer between grains, the scattering coefficient of single crystal and ceramic, and the derived release cross section of Yb:YAG ceramic are described. (S.Y.)

  2. Advanced lasers for fusion

    International Nuclear Information System (INIS)

    Krupke, W.F.; George, E.V.; Haas, R.A.

    1979-01-01

    Laser drive systems' performance requirements for fusion reactors are developed following a review of the principles of inertial confinement fusion and of the technical status of fusion research lasers (Nd:glass; CO 2 , iodine). These requirements are analyzed in the context of energy-storing laser media with respect to laser systems design issues: optical damage and breakdown, medium excitation, parasitics and superfluorescence depumping, energy extraction physics, medium optical quality, and gas flow. Three types of energy-storing laser media of potential utility are identified and singled out for detailed review: (1) Group VI atomic lasers, (2) rare earth solid state hybrid lasers, and (3) rare earth molecular vapor lasers. The use of highly-radiative laser media, particularly the rare-gas monohalide excimers, are discussed in the context of short pulse fusion applications. The concept of backward wave Raman pulse compression is considered as an attractive technique for this purpose. The basic physics and device parameters of these four laser systems are reviewed and conceptual designs for high energy laser systems are presented. Preliminary estimates for systems efficiencies are given. (Auth.)

  3. Micromachining with copper lasers

    Science.gov (United States)

    Knowles, Martyn R. H.; Bell, Andy; Foster-Turner, Gideon; Rutterford, Graham; Chudzicki, J.; Kearsley, Andrew J.

    1997-04-01

    In recent years the copper laser has undergone extensive development and has emerged as a leading and unique laser for micromachining. The copper laser is a high average power (10 - 250 W), high pulse repetition rate (2 - 32 kHz), visible laser (511 nm and 578 nm) that produces high peak power (typically 200 kW), short pulses (30 ns) and very good beam quality (diffraction limited). This unique set of laser parameters results in exceptional micro-machining in a wide variety of materials. Typical examples of the capabilities of the copper laser include the drilling of small holes (10 - 200 micrometer diameter) in materials as diverse as steel, ceramic, diamond and polyimide with micron precision and low taper (less than 1 degree) cutting and profiling of diamond. Application of the copper laser covers the electronic, aerospace, automotive, nuclear, medical and precision engineering industries.

  4. Laser Applications in Orthodontics

    Science.gov (United States)

    Heidari, Somayeh; Torkan, Sepideh

    2013-01-01

    A laser is a collimated single wavelength of light which delivers a concentrated source of energy. Soon after different types of lasers were invented, investigators began to examine the effects of different wavelengths of laser energy on oral tissues, routine dental procedures and experimental applications. Orthodontists, along with other specialist in different fields of dentistry, can now benefit from several different advantages that lasers provide during the treatment process, from the beginning of the treatment, when separators are placed, to the time of resin residues removal from the tooth surface at the end of orthodontic treatment. This article outlines some of the most common usages of laser beam in orthodontics and also provides a comparison between laser and other conventional method that were the standard of care prior to the advent of laser in this field. PMID:25606324

  5. ORION laser target diagnostics

    International Nuclear Information System (INIS)

    Bentley, C. D.; Edwards, R. D.; Andrew, J. E.; James, S. F.; Gardner, M. D.; Comley, A. J.; Vaughan, K.; Horsfield, C. J.; Rubery, M. S.; Rothman, S. D.; Daykin, S.; Masoero, S. J.; Palmer, J. B.; Meadowcroft, A. L.; Williams, B. M.; Gumbrell, E. T.; Fyrth, J. D.; Brown, C. R. D.; Hill, M. P.; Oades, K.

    2012-01-01

    The ORION laser facility is one of the UK's premier laser facilities which became operational at AWE in 2010. Its primary mission is one of stockpile stewardship, ORION will extend the UK's experimental plasma physics capability to the high temperature, high density regime relevant to Atomic Weapons Establishment's (AWE) program. The ORION laser combines ten laser beams operating in the ns regime with two sub ps short pulse chirped pulse amplification beams. This gives the UK a unique combined long pulse/short pulse laser capability which is not only available to AWE personnel but also gives access to our international partners and visiting UK academia. The ORION laser facility is equipped with a comprehensive suite of some 45 diagnostics covering optical, particle, and x-ray diagnostics all able to image the laser target interaction point. This paper focuses on a small selection of these diagnostics.

  6. ORION laser target diagnostics.

    Science.gov (United States)

    Bentley, C D; Edwards, R D; Andrew, J E; James, S F; Gardner, M D; Comley, A J; Vaughan, K; Horsfield, C J; Rubery, M S; Rothman, S D; Daykin, S; Masoero, S J; Palmer, J B; Meadowcroft, A L; Williams, B M; Gumbrell, E T; Fyrth, J D; Brown, C R D; Hill, M P; Oades, K; Wright, M J; Hood, B A; Kemshall, P

    2012-10-01

    The ORION laser facility is one of the UK's premier laser facilities which became operational at AWE in 2010. Its primary mission is one of stockpile stewardship, ORION will extend the UK's experimental plasma physics capability to the high temperature, high density regime relevant to Atomic Weapons Establishment's (AWE) program. The ORION laser combines ten laser beams operating in the ns regime with two sub ps short pulse chirped pulse amplification beams. This gives the UK a unique combined long pulse/short pulse laser capability which is not only available to AWE personnel but also gives access to our international partners and visiting UK academia. The ORION laser facility is equipped with a comprehensive suite of some 45 diagnostics covering optical, particle, and x-ray diagnostics all able to image the laser target interaction point. This paper focuses on a small selection of these diagnostics.

  7. Robot-laser system

    International Nuclear Information System (INIS)

    Akeel, H.A.

    1987-01-01

    A robot-laser system is described for providing a laser beam at a desired location, the system comprising: a laser beam source; a robot including a plurality of movable parts including a hollow robot arm having a central axis along which the laser source directs the laser beam; at least one mirror for reflecting the laser beam from the source to the desired location, the mirror being mounted within the robot arm to move therewith and relative thereto to about a transverse axis that extends angularly to the central axis of the robot arm; and an automatic programmable control system for automatically moving the mirror about the transverse axis relative to and in synchronization with movement of the robot arm to thereby direct the laser beam to the desired location as the arm is moved

  8. Laser safety in dentistry

    Science.gov (United States)

    Wigdor, Harvey A.

    1997-05-01

    One of the major causes of anxiety in the dental clinic is the dental handpiece. Because dentists wish to provide a method which can replace the drill there has often been a premature use of the laser in dentistry. Various lasers have been introduced into the clinic before research has shown the laser used is of clinical benefit. Any new treatment method must not compromise the health of the patient being treated. Thus a method of evaluating the clinical abilities of dentists and their understanding the limitations of the laser used must be developed. Dentist must be trained in the basic interaction of the laser on oral tissues. The training has to concentrate on the variation of the laser wavelength absorption in the different tissues of the oral cavity. Because of the differences in the optical properties of these tissues great care must be exercised by practitioners using lasers on patients.

  9. Lasers in materials science

    CERN Document Server

    Ossi, Paolo; Zhigilei, Leonid

    2014-01-01

    This book covers various aspects of lasers in materials science, including a comprehensive overview on basic principles of laser-materials interactions and applications enabled by pulsed laser systems.  The material is organized in a coherent way, providing the reader with a harmonic architecture. While systematically covering the major current and emerging areas of lasers processing applications, the Volume provides examples of targeted modification of material properties achieved through careful control of the processing conditions and laser irradiation parameters. Special emphasis is placed on specific strategies aimed at nanoscale control of material structure and properties to match the stringent requirements of modern applications.  Laser fabrication of novel nanomaterials, which expands to the domains of photonics, photovoltaics, sensing, and biomedical applications, is also discussed in the Volume. This book assembles chapters based on lectures delivered at the Venice International School on Lasers...

  10. Alternate laser fusion drivers

    International Nuclear Information System (INIS)

    Pleasance, L.D.

    1979-11-01

    One objective of research on inertial confinement fusion is the development of a power generating system based on this concept. Realization of this goal will depend on the availability of a suitable laser or other system to drive the power plant. The primary laser systems used for laser fusion research, Nd 3+ : Glass and CO 2 , have characteristics which may preclude their use for this application. Glass lasers are presently perceived to be incapable of sufficiently high average power operation and the CO 2 laser may be limited by and issues associated with target coupling. These general perceptions have encouraged a search for alternatives to the present systems. The search for new lasers has been directed generally towards shorter wavelengths; most of the new lasers discovered in the past few years have been in the visible and ultraviolet region of the spectrum. Virtually all of them have been advocated as the most promising candidate for a fusion driver at one time or another

  11. Flexible Laser Metal Cutting

    DEFF Research Database (Denmark)

    Villumsen, Sigurd; Jørgensen, Steffen Nordahl; Kristiansen, Morten

    2014-01-01

    This paper describes a new flexible and fast approach to laser cutting called ROBOCUT. Combined with CAD/CAM technology, laser cutting of metal provides the flexibility to perform one-of-a-kind cutting and hereby realises mass production of customised products. Today’s laser cutting techniques...... possess, despite their wide use in industry, limitations regarding speed and geometry. Research trends point towards remote laser cutting techniques which can improve speed and geometrical freedom and hereby the competitiveness of laser cutting compared to fixed-tool-based cutting technology...... such as punching. This paper presents the concepts and preliminary test results of the ROBOCUT laser cutting technology, a technology which potentially can revolutionise laser cutting....

  12. Lasers: principles, applications and energetic measures

    International Nuclear Information System (INIS)

    Subran, C.; Sagaut, J.; Lapointe, S.

    2009-01-01

    After having recalled the principles of a laser and the properties of the laser beam, the authors describe the following different types of lasers: solid state lasers, fiber lasers, semiconductor lasers, dye lasers and gas lasers. Then, their applications are given. Very high energy lasers can reproduce the phenomenon of nuclear fusion of hydrogen atoms. (O.M.)

  13. Lasers in space

    Science.gov (United States)

    Michaelis, M. M.; Forbes, A.; Bingham, R.; Kellett, B. J.; Mathye, A.

    2008-05-01

    A variety of laser applications in space, past, present, future and far future are reviewed together with the contributions of some of the scientists and engineers involved, especially those that happen to have South African connections. Historically, two of the earliest laser applications in space, were atmospheric LIDAR and lunar ranging. These applications involved atmospheric physicists, several astronauts and many of the staff recruited into the Soviet and North American lunar exploration programmes. There is a strong interest in South Africa in both LIDAR and lunar ranging. Shortly after the birth of the laser (and even just prior) theoretical work on photonic propulsion and space propulsion by laser ablation was initiated by Georgii Marx, Arthur Kantrowitz and Eugen Saenger. Present or near future experimental programs are developing in the following fields: laser ablation propulsion, possibly coupled with rail gun or gas gun propulsion; interplanetary laser transmission; laser altimetry; gravity wave detection by space based Michelson interferometry; the de-orbiting of space debris by high power lasers; atom laser interferometry in space. Far future applications of laser-photonic space-propulsion were also pioneered by Carl Sagan and Robert Forward. They envisaged means of putting Saenger's ideas into practice. Forward also invented a laser based method for manufacturing solid antimatter or SANTIM, well before the ongoing experiments at CERN with anti-hydrogen production and laser-trapping. SANTIM would be an ideal propellant for interstellar missions if it could be manufactured in sufficient quantities. It would be equally useful as a power source for the transmission of information over light year distances. We briefly mention military lasers. Last but not least, we address naturally occurring lasers in space and pose the question: "did the Big Bang lase?"

  14. Low Power Greenhouse Gas Sensors for Unmanned Aerial Vehicles

    Directory of Open Access Journals (Sweden)

    David J. Lary

    2012-05-01

    Full Text Available We demonstrate compact, low power, lightweight laser-based sensors for measuring trace gas species in the atmosphere designed specifically for electronic unmanned aerial vehicle (UAV platforms. The sensors utilize non-intrusive optical sensing techniques to measure atmospheric greenhouse gas concentrations with unprecedented vertical and horizontal resolution (~1 m within the planetary boundary layer. The sensors are developed to measure greenhouse gas species including carbon dioxide, water vapor and methane in the atmosphere. Key innovations are the coupling of very low power vertical cavity surface emitting lasers (VCSELs to low power drive electronics and sensitive multi-harmonic wavelength modulation spectroscopic techniques. The overall mass of each sensor is between 1–2 kg including batteries and each one consumes less than 2 W of electrical power. In the initial field testing, the sensors flew successfully onboard a T-Rex Align 700E robotic helicopter and showed a precision of 1% or less for all three trace gas species. The sensors are battery operated and capable of fully automated operation for long periods of time in diverse sensing environments. Laser-based trace gas sensors for UAVs allow for high spatial mapping of local greenhouse gas concentrations in the atmospheric boundary layer where land/atmosphere fluxes occur. The high-precision sensors, coupled to the ease-of-deployment and cost effectiveness of UAVs, provide unprecedented measurement capabilities that are not possible with existing satellite-based and suborbital aircraft platforms.

  15. Laser system using ultra-short laser pulses

    Science.gov (United States)

    Dantus, Marcos [Okemos, MI; Lozovoy, Vadim V [Okemos, MI; Comstock, Matthew [Milford, MI

    2009-10-27

    A laser system using ultrashort laser pulses is provided. In another aspect of the present invention, the system includes a laser, pulse shaper and detection device. A further aspect of the present invention employs a femtosecond laser and binary pulse shaping (BPS). Still another aspect of the present invention uses a laser beam pulse, a pulse shaper and a SHG crystal.

  16. Designing of Raman laser

    International Nuclear Information System (INIS)

    Zidan, M. D.; Al-Awad, F.; Alsous, M. B.

    2005-01-01

    In this work, we describe the design of the Raman laser pumped by Frequency doubled Nd-YAG laser (λ=532 nm) to generate new laser wavelengths by shifting the frequency of the Nd-YAG laser to Stokes region (λ 1 =683 nm, λ 2 =953.6 nm, λ 3 =1579.5 nm) and Antistokes region (λ ' 1 =435 nm, λ ' 2 =369.9 nm, λ ' 3=319.8 nm). Laser resonator has been designed to increase the laser gain. It consists of two mirrors, the back mirror transmits the pump laser beam (λ=532 nm) through the Raman tube and reflects all other generated Raman laser lines. Four special front mirrors were made to be used for the four laser lines λ 1 =683 nm, λ 2 =953.6 nm and λ ' 1 = 435 nm, λ ' 2 =369.9 nm. The output energy for the lines υ 1 s, υ 2 s, υ 1 as,υ 2 as was measured. The output energy of the Raman laser was characterized for different H 2 pressure inside the tube. (Author)

  17. Laser program overview

    International Nuclear Information System (INIS)

    Storm, E.; Coleman, L.W.

    1985-01-01

    The objectives of the Lawrence Livermore National Laboratory Laser Fusion program are to understand and develop the science and technology of inertial confinement fusion (ICF), and to utilize ICF in short- and long-term military applications, and, in the long-term, as a candidate for central-station civilian power generation. In 1984, using the Novette laser system, the authors completed experiments showing the very favorable scaling of laser-plama interactions with short-wavelength laser light. Their Novette experiments have unequivocally shown that short laser wavelength, i.e., less than 1 μm, is required to provide the drive necessary for efficient compression, ignition, and burn of DT fusion fuel. In other experiments with Novette, the authors made the first unambiguous observation of amplified spontaneous emission in the soft x-ray regime. The authors also conducted military applications and weapons physics experiments, which they discuss in detail in the classified volume of our Laser Program Annual Report. In the second thrust, advanced laser studies, they develop and test the concepts, components, and materials for present and future laser systems. Over the years, this has meant providing the technology base and scientific advances necessary to construct and operate a succession of six evermore-powerful laser systems. The latest of these, Nova, a 100-TW/100-kJ-class laser system, was completed in 1984. The Nd:glass laser continues to be the most effective and versatile tool for ICF and weapons physics because of its scalability in energy, the ability to efficiently convert its 1=μm output to shorter wavelengths, its ability to provide flexible, controlled pulse shaping, and its capability to adapt to a variety of irradiation and focusing geometries. For these reasons, many of our advanced laser studies are in areas appropriate to solid state laser technologies

  18. Laser pumped lasers for isotope separation

    International Nuclear Information System (INIS)

    Fry, S.M.

    1976-01-01

    A study of the isotope separation laser requirements reveals that high pressure polyatomic molecular gas laser pumped lasers can attain the necessary characteristics including tunability, energy output, pulse width, and repetition rate. The results of a search, made for molecules meeting the appropriate requirements for one of several pump schemes utilizing a CO 2 laser and with output in the 12 μm or 16μm wavelength range, are presented. Several methods of pumping are reviewed and two novel pump schemes are presented. A laser pumped laser device design is given, and operation of this device and associated diagnostic equipment is confirmed by repeating experiments in OCS and NH 3 . The results of OCS laser experiments show that an improvement in pump rate and output per unit length is obtained with the device, using a wedged transverse pumping scheme. A new multi-line laser system in NH 3 pumped by a TEA CO 2 laser is reported. More than forty transitions spanning the wavelength range of 9.2 to 13.8 μm are observed and identified. A strong output at 12.08 μm is one of the closest lines yet found to the required laser isotope separation wavelength. Far infrared emission near 65 μm is observed and is responsible for populating levels which lase in pure ammonia near 12.3 μm. Buffer gas (e.g., N 2 or He) pressures of approximately 40--800 torr cause energy transfer by collision-induced rotationaltransitions from the pumped antisymmetric to the lasing symmetric levels in the nu 2 = 1 band of ammonia. Most of the observed lines are aP(J,K) transitions which originate from the nu 2 /sup s/ band. Measurements of the pressure dependence of the laser output shows that some lines lase at pressures greater than one atmosphere. Transient behavior of the 12.08 μm line is calculated from a simplified analytic model and these calculations are compared to the experimental results

  19. Pattern Laser Annealing by a Pulsed Laser

    Science.gov (United States)

    Komiya, Yoshio; Hoh, Koichiro; Murakami, Koichi; Takahashi, Tetsuo; Tarui, Yasuo

    1981-10-01

    Preliminary experiments with contact-type pattern laser annealing were made for local polycrystallization of a-Si, local evaporation of a-Si and local formation of Ni-Si alloy. These experiments showed that the mask patterns can be replicated as annealed regions with a resolution of a few microns on substrates. To overcome shortcomings due to the contact type pattern annealing, a projection type reduction pattern laser annealing system is proposed for resistless low temperature pattern forming processes.

  20. High energy HF pulsed lasers

    International Nuclear Information System (INIS)

    Patterson, E.L.; Gerber, R.A.

    1976-01-01

    Recent experiments show that pulsed HF lasers are capable of producing high energy with good efficiency. Preliminary experiments show that the laser radiation from the high-gain medium can be controlled with a low-power probe laser beam or with low-level feedback. These results indicate that the HF laser may have potential for second-generation laser fusion experiments

  1. Laser Safety Inspection Criteria

    International Nuclear Information System (INIS)

    Barat, K

    2005-01-01

    A responsibility of the Laser Safety Officer (LSO) is to perform laser safety audits. The American National Standard Z136.1 Safe use of Lasers references this requirement in several sections: (1) Section 1.3.2 LSO Specific Responsibilities states under Hazard Evaluation, ''The LSO shall be responsible for hazards evaluation of laser work areas''; (2) Section 1.3.2.8, Safety Features Audits, ''The LSO shall ensure that the safety features of the laser installation facilities and laser equipment are audited periodically to assure proper operation''; and (3) Appendix D, under Survey and Inspections, it states, ''the LSO will survey by inspection, as considered necessary, all areas where laser equipment is used''. Therefore, for facilities using Class 3B and or Class 4 lasers, audits for laser safety compliance are expected to be conducted. The composition, frequency and rigueur of that inspection/audit rests in the hands of the LSO. A common practice for institutions is to develop laser audit checklists or survey forms. In many institutions, a sole Laser Safety Officer (LSO) or a number of Deputy LSO's perform these audits. For that matter, there are institutions that request users to perform a self-assessment audit. Many items on the common audit list and the associated findings are subjective because they are based on the experience and interest of the LSO or auditor in particular items on the checklist. Beam block usage is an example; to one set of eyes a particular arrangement might be completely adequate, while to another the installation may be inadequate. In order to provide more consistency, the National Ignition Facility Directorate at Lawrence Livermore National Laboratory (NIF-LLNL) has established criteria for a number of items found on the typical laser safety audit form. These criteria are distributed to laser users, and they serve two broad purposes: first, it gives the user an expectation of what will be reviewed by an auditor, and second, it is an

  2. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  3. Nuclear-pumped lasers

    CERN Document Server

    Prelas, Mark

    2016-01-01

    This book focuses on Nuclear-Pumped Laser (NPL) technology and provides the reader with a fundamental understanding of NPLs, a review of research in the field, and exploration of large scale NPL system design and applications. Early chapters look at the fundamental properties of lasers, nuclear-pumping and nuclear reactions that may be used as drivers for nuclear-pumped lasers. The book goes on to explore the efficient transport of energy from the ionizing radiation to the laser medium and then the operational characteristics of existing nuclear-pumped lasers. Models based on Mathematica, explanations and a tutorial all assist the reader’s understanding of this technology. Later chapters consider the integration of the various systems involved in NPLs and the ways in which they can be used, including beyond the military agenda. As readers will discover, there are significant humanitarian applications for high energy/power lasers, such as deflecting asteroids, space propulsion, power transmission and mining....

  4. Power Laser Ablation Symposia

    CERN Document Server

    Phipps, Claude

    2007-01-01

    Laser ablation describes the interaction of intense optical fields with matter, in which atoms are selectively driven off by thermal or nonthermal mechanisms. The field of laser ablation physics is advancing so rapidly that its principal results are seen only in specialized journals and conferences. This is the first book that combines the most recent results in this rapidly advancing field with authoritative treatment of laser ablation and its applications, including the physics of high-power laser-matter interaction. Many practical applications exist, ranging from inertial confinement fusion to propulsion of aerostats for pollution monitoring to laser ignition of hypersonic engines to laser cleaning nanoscale contaminants in high-volume computer hard drive manufacture to direct observation of the electronic or dissociative states in atoms and molecules, to studying the properties of materials during 200kbar shocks developed in 200fs. Selecting topics which are representative of such a broad field is difficu...

  5. Laser induced nuclear reactions

    International Nuclear Information System (INIS)

    Ledingham, Ken; McCanny, Tom; Graham, Paul; Fang Xiao; Singhal, Ravi; Magill, Joe; Creswell, Alan; Sanderson, David; Allott, Ric; Neely, David; Norreys, Peter; Santala, Marko; Zepf, Matthew; Watts, Ian; Clark, Eugene; Krushelnick, Karl; Tatarakis, Michael; Dangor, Bucker; Machecek, Antonin; Wark, Justin

    1998-01-01

    Dramatic improvements in laser technology since 1984 have revolutionised high power laser technology. Application of chirped-pulse amplification techniques has resulted in laser intensities in excess of 10 19 W/cm 2 . In the mid to late eighties, C. K. Rhodes and K. Boyer discussed the possibility of shining laser light of this intensity onto solid surfaces and to cause nuclear transitions. In particular, irradiation of a uranium target could induce electro- and photofission in the focal region of the laser. In this paper it is shown that μCi of 62 Cu can be generated via the (γ,n) reaction by a laser with an intensity of about 10 19 Wcm -2

  6. Lasers for isotope separation

    International Nuclear Information System (INIS)

    O'Hair, E.A.; Piltch, M.S.

    1976-01-01

    The Los Alamos Scientific Laboratory is conducting research on uranium enrichment. All processes being studied employ uranium molecules and use lasers to provide isotopic selectivity and enrichment. There are four well-defined infrared frequencies and two ultraviolet frequency bands of interest. The infrared frequencies are outside the range of the available lasers and an extensive research and development activity is currently underway. Lasers are available in the uv bands, however, much development work remains. The specification for the commercial uranium enrichment plant lasers will depend upon the results of the current enrichment experiments, the laser capital cost, reliability, and maintenance cost. For the processes under investigation there are specific photon requirements but latitude in how these requirements can be met. The final laser selections for the pilot plant need not be made until the mid-1980's. Between now and that time as extensive as possible a research and development effort will be maintained

  7. Inertial fusion by laser

    International Nuclear Information System (INIS)

    Dautray, R.; Watteau, J.-P.

    1980-01-01

    Following a brief historical survey of research into the effects of interaction of laser with matter, the principles of fusion by inertial confinement are described and the main parameters and possible levels given. The development of power lasers is then discussed with details of performances of the main lasers used in various laboratories, and with an assessment of the respective merits of neodymium glass, carbon dioxide or iodine lasers. The phenomena of laser radiation and its interaction with matter is then described, with emphasis on the results of experiments concerned with target implosion with the object of compressing and heating the mixture of heavy hydrogen and tritium to be ignited. Finally, a review is made of future possibilities opened up by the use of large power lasers which have recently become operational or are being constructed, and the ground still to be covered before a reactor can be produced [fr

  8. Principles of Lasers

    CERN Document Server

    Svelto, Orazio

    2010-01-01

    This new Fifth Edition of Principles of Lasers incorporates corrections to the previous edition. The text’s essential mission remains the same: to provide a wide-ranging yet unified description of laser behavior, physics, technology, and current applications. Dr. Svelto emphasizes the physical rather than the mathematical aspects of lasers, and presents the subject in the simplest terms compatible with a correct physical understanding. Praise for earlier editions: "Professor Svelto is himself a longtime laser pioneer and his text shows the breadth of his broad acquaintance with all aspects of the field … Anyone mastering the contents of this book will be well prepared to understand advanced treatises and research papers in laser science and technology." (Arthur L. Schawlow, 1981 Nobel Laureate in Physics) "Already well established as a self-contained introduction to the physics and technology of lasers … Professor Svelto’s book, in this lucid translation by David Hanna, can be strongly recommended for...

  9. Atomic iodine laser

    International Nuclear Information System (INIS)

    Fisk, G.A.; Gusinow, M.A.; Hays, A.K.; Padrick, T.D.; Palmer, R.E.; Rice, J.K.; Truby, F.K.; Riley, M.E.

    1978-05-01

    The atomic iodine photodissociation laser has been under intensive study for a number of years. The physics associated with this system is now well understood and it is possible to produce a 0.1 nsec (or longer) near-diffraction-limited laser pulse which can be amplified with negligible temporal distortion and little spatial deformation. The output of either a saturated or unsaturated amplifier consists of a high-fidelity near-diffraction-limited, energetic laser pulse. The report is divided into three chapters. Chapter 1 is a survey of the important areas affecting efficient laser operation and summarizes the findings of Chap. 2. Chapter 2 presents detailed discussions and evaluations pertinent to pumps, chemical regeneration, and other elements in the overall laser system. Chapter 3 briefly discusses those areas that require further work and the nature of the work required to complete the full-scale evaluation of the applicability of the iodine photodissociation laser to the inertial confinement program

  10. Strong field laser physics

    CERN Document Server

    2008-01-01

    Since the invention of the laser in the 1960s, people have strived to reach higher intensities and shorter pulse durations. High intensities and ultrashort pulse durations are intimately related. Recent developments have shown that high intensity lasers also open the way to realize pulses with the shortest durations to date, giving birth to the field of attosecond science (1 asec = 10-18s). This book is about high-intensity lasers and their applications. The goal is to give an up to date introduction to the technology behind these laser systems and to the broad range of intense laser applications. These applications include AMO (atomic molecular and optical) physics, x-ray science, attosecond science, plasma physics and particle acceleration, condensed matter science and laser micromachining, and finally even high-energy physics.

  11. Arduino based laser control

    OpenAIRE

    Bernal Muñoz, Ferran

    2015-01-01

    ARDUINO is a vey usefull platform for prototypes. In this project ARDUINO will be used for controling a Semiconductor Tuneable Laser. [ANGLÈS] Diode laser for communications control based on an Arduino board. Temperature control implementation. Software and hardware protection for the laser implementation. [CASTELLÀ] Control de un láser de comunicaciones ópticas desde el ordenador utilizando una placa Arduino. Implementación de un control de temperatura y protección software y hardware ...

  12. Shiva laser system performance

    International Nuclear Information System (INIS)

    Glaze, J.; Godwin, R.O.; Holzrichter, J.F.

    1978-01-01

    On November 18, 1977, after four years of experimentation, innovation, and construction, the Shiva High Energy Laser facility produced 10.2 kJ of focusable laser energy delivered in a 0.95 ns pulse. The Shiva laser, with its computer control system and delta amplifiers, demonstrated its versatility on May 18, 1978, when the first 20-beam target shot with delta amplifiers focused 26 TW on a target and produced a yield of 7.5 x 10 9 neutrons

  13. Lasers in Ophthalmology

    Institute of Scientific and Technical Information of China (English)

    1992-01-01

    In recent years,lasers have entered every fieldof medicine and especially so in ophthalmol-ogy.The scientific basis of lasers in ophthal-mology is based on three mechanisms:1.Photothermal effectLasers:argon,krypton,dye and diodeA thermal effect is generated when laserenergy is absorbed by pigment leading to in-creased vibration and therefore heat content.A

  14. Laser Journal (Selected Articles),

    Science.gov (United States)

    1982-09-10

    laser is described. The apparatus structure and some experimental results are reported. MATERIAL AND ELEMENT MAGNETO -OPTIC PROPERTIES OF Pr dYb),(1oAI...with a magneto -optical modulator. The measuring system is simple and sensitive, with reading accuracy of ±0.0050 and error 45%. STUDY ON EXPERIMENTAL...laser radiation therapy . He Fang de East Chiia Hospital APPLICATION OF N4d,:Y q LASER TO TREAT INTERNAL HEMERRHOID Zhuo Ruilin Zu Songlin (Shanghai

  15. Laser precision microfabrication

    CERN Document Server

    Sugioka, Koji; Pique, Alberto

    2010-01-01

    Miniaturization and high precision are rapidly becoming a requirement for many industrial processes and products. As a result, there is greater interest in the use of laser microfabrication technology to achieve these goals. This book composed of 16 chapters covers all the topics of laser precision processing from fundamental aspects to industrial applications to both inorganic and biological materials. It reviews the sate of the art of research and technological development in the area of laser processing.

  16. Lasers for the SILVA laser isotope separation process

    International Nuclear Information System (INIS)

    Lapierre, Y.

    1997-01-01

    The main principles of the laser isotope separation process for the production of enriched uranium at lower cost, are reviewed and the corresponding optimal laser characteristics are described. The development of the SILVA laser isotope separation process involved researches in the various domains of pump lasers, dye lasers, laser and optics systems and two test facilities for the feasibility studies which are expected for 1997

  17. A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

    Science.gov (United States)

    Böhringer, Klaus; Hess, Ortwin

    The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present

  18. High power lasers

    CERN Document Server

    Niku-Lari, A

    1989-01-01

    The use of lasers for the working and treatment of materials is becoming increasingly common in industry. However, certain laser applications, for example, in welding, cutting and drilling, are more widely exploited than others. Whilst the potential of lasers for the surface treatment of metals is well recognised, in practice, this particular application is a relative newcomer. The 24 papers in this volume present the latest research and engineering developments in the use of lasers for processes such as surface melting, surface alloying and cladding, and machining, as well as discussing th

  19. Degenerate band edge laser

    Science.gov (United States)

    Veysi, Mehdi; Othman, Mohamed A. K.; Figotin, Alexander; Capolino, Filippo

    2018-05-01

    We propose a class of lasers based on a fourth-order exceptional point of degeneracy (EPD) referred to as the degenerate band edge (DBE). EPDs have been found in parity-time-symmetric photonic structures that require loss and/or gain; here we show that the DBE is a different kind of EPD since it occurs in periodic structures that are lossless and gainless. Because of this property, a small level of gain is sufficient to induce single-frequency lasing based on a synchronous operation of four degenerate Floquet-Bloch eigenwaves. This lasing scheme constitutes a light-matter interaction mechanism that leads also to a unique scaling law of the laser threshold with the inverse of the fifth power of the laser-cavity length. The DBE laser has the lowest lasing threshold in comparison to a regular band edge laser and to a conventional laser in cavities with the same loaded quality (Q ) factor and length. In particular, even without mirror reflectors the DBE laser exhibits a lasing threshold which is an order of magnitude lower than that of a uniform cavity laser of the same length and with very high mirror reflectivity. Importantly, this novel DBE lasing regime enforces mode selectivity and coherent single-frequency operation even for pumping rates well beyond the lasing threshold, in contrast to the multifrequency nature of conventional uniform cavity lasers.

  20. Gigashot Optical Laser Demonstrator

    Energy Technology Data Exchange (ETDEWEB)

    Deri, R. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2015-10-13

    The Gigashot Optical Laser Demonstrator (GOLD) project has demonstrated a novel optical amplifier for high energy pulsed lasers operating at high repetition rates. The amplifier stores enough pump energy to support >10 J of laser output, and employs conduction cooling for thermal management to avoid the need for expensive and bulky high-pressure helium subsystems. A prototype amplifier was fabricated, pumped with diode light at 885 nm, and characterized. Experimental results show that the amplifier provides sufficient small-signal gain and sufficiently low wavefront and birefringence impairments to prove useful in laser systems, at repetition rates up to 60 Hz.

  1. Notes on Laser Acceleration

    International Nuclear Information System (INIS)

    Tajima, T.

    2008-01-01

    This note intends to motivate our effort toward the advent of new methods of particle acceleration, utilizing the fast rising laser technology. By illustrating the underlying principles in an intuitive manner and thus less jargon-clad fashion, we seek a direction in which we shall be able to properly control and harness the promise of laser acceleration. First we review the idea behind the laser wakefield. We then go on to examine ion acceleration by laser. We examine the sheath acceleration in particular and look for the future direction that allows orderly acceleration of ions in high energies

  2. X-ray lasers

    CERN Document Server

    Elton, Raymond C

    2012-01-01

    The first in its field, this book is both an introduction to x-ray lasers and a how-to guide for specialists. It provides new entrants and others interested in the field with a comprehensive overview and describes useful examples of analysis and experiments as background and guidance for researchers undertaking new laser designs. In one succinct volume, X-Ray Lasers collects the knowledge and experience gained in two decades of x-ray laser development and conveys the exciting challenges and possibilities still to come._Add on for longer version of blurb_M>The reader is first introduced

  3. Lasers in materials processing

    International Nuclear Information System (INIS)

    Davis, J.I.; Rockower, E.B.

    1981-01-01

    A status report on the uranium Laser Isotope Separation (LIS) Program at the Lawrence Livermore National Laboratory is presented. Prior to this status report, process economic analysis is presented so as to understand how the unique properties of laser photons can be best utilized in the production of materials and components despite the high cost of laser energy. The characteristics of potential applications that are necessary for success are identified, and those factors that have up to now frustrated attempts to find commercially viable laser induced chemical and physical process for the production of new or existing materials are pointed out

  4. Mid-Infrared Lasers

    Data.gov (United States)

    National Aeronautics and Space Administration — Mid infrared solid state lasers for Differential Absorption Lidar (DIAL) systems required for understanding atmospheric chemistry are not available. This program...

  5. Laser fusion program overview

    International Nuclear Information System (INIS)

    Emmett, J.L.

    1977-01-01

    This program is structured to proceed through a series of well defined fusion milestones to proof of the scientific feasibility, of laser fusion with the Shiva Nova system. Concurrently, those key technical areas, such as advanced lasers, which are required to progress beyond proof of feasibility, are being studied. We have identified and quantified the opportunities and key technical issues in military applications, such as weapons effects simulations, and in civilian applications, such as central-station electric power production. We summarize the current status and future plans for the laser fusion program at LLL, emphasizing the civilian applications of laser fusion

  6. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  7. Principles of laser dynamics

    CERN Document Server

    Khanin, YI

    1995-01-01

    This monograph summarizes major achievements in laser dynamics over the past three decades. The book begins with two introductory Chapters. Chapter 1 offers general considerations on quantum oscillators, formulates the requirements for the laser key elements and shows how these requirements are met in different laser systems. The second Chapter proposes the mathematical models used in semiclassical laser theory, discusses the approximations and simplifications in particular cases, and specifies the range of applicability of these models. In Chapters 3-5 attention is given primarily to the stea

  8. Laser transmitter system

    International Nuclear Information System (INIS)

    Dye, R.A.

    1975-01-01

    A laser transmitter system is disclosed which utilizes mechanical energy for generating an output pulse. The laser system includes a current developing device such as a piezoelectric crystal which charges a storage device such as a capacitor in response to a mechanical input signal. The capacitor is coupled to a switching device, such as a silicon controlled rectifier (SCR). The switching device is coupled to a laser transmitter such as a GaAs laser diode, which provides an output signal in response to the capacitor being discharged

  9. Laser in urology

    International Nuclear Information System (INIS)

    Breisland, H.O.

    1991-01-01

    The neodymium YAG laser is particularly suited for endoscopic urologic surgery because the YAG laser light can be conducted in flexible fibers. Superficial bladder tumours can be treated under local anaesthesia in the outpatient department. The frequency of local recurrences is low, significantly lower than after electrosection or electrocoagulation. Selected cases of T2-muscle invasive bladder tumours can be cured with laser coagulation applied subsequently to transurethral resection. Combined treatment with electrosection and laser coagulation of localized prostatic cancer is a promising method which compares favourably with results obtained by other treatment modalities. Tumours in the upper urinary tract can be laser-treated through ureteroscopes or nephroscopes, but the treatment should be limited to low stage, low grade tumours. Laser is the treatment of choice for intraurethral condylomatas. Laser treatment of penil carcinoma gives excellent cosmetic and functional results and few local recurrences. Laser lithotripsy is a new technique for treatment of ureteric stones and photodynamic laser therapy is a promising tecnique for treatment of carcinoma in situ in the bladder empithelium. However, neither of these techniques are available for clinical use in Norway as yet. 17 refs., 3 figs., 1 tabs

  10. Tunable Microfluidic Dye Laser

    DEFF Research Database (Denmark)

    Olsen, Brian Bilenberg; Helbo, Bjarne; Kutter, Jörg Peter

    2003-01-01

    We present a tunable microfluidic dye laser fabricated in SU-8. The tunability is enabled by integrating a microfluidic diffusion mixer with an existing microfluidic dye laser design by Helbo et al. By controlling the relative flows in the mixer between a dye solution and a solvent......, the concentration of dye in the laser cavity can be adjusted, allowing the wavelength to be tuned. Wavelength tuning controlled by the dye concentration was demonstrated with macroscopic dye lasers already in 1971, but this principle only becomes practically applicable by the use of microfluidic mixing...

  11. Trends in laser micromachining

    Science.gov (United States)

    Gaebler, Frank; van Nunen, Joris; Held, Andrew

    2016-03-01

    Laser Micromachining is well established in industry. Depending on the application lasers with pulse length from μseconds to femtoseconds and wavelengths from 1064nm and its harmonics up to 5μm or 10.6μm are used. Ultrafast laser machining using pulses with pico or femtosecond duration pulses is gaining traction, as it offers very precise processing of materials with low thermal impact. Large-scale industrial ultrafast laser applications show that the market can be divided into various sub segments. One set of applications demand low power around 10W, compact footprint and are extremely sensitive to the laser price whilst still demanding 10ps or shorter laser pulses. A second set of applications are very power hungry and only become economically feasible for large scale deployments at power levels in the 100+W class. There is also a growing demand for applications requiring fs-laser pulses. In our presentation we would like to describe these sub segments by using selected applications from the automotive and electronics industry e.g. drilling of gas/diesel injection nozzles, dicing of LED substrates. We close the presentation with an outlook to micromachining applications e.g. glass cutting and foil processing with unique new CO lasers emitting 5μm laser wavelength.

  12. Scanning Color Laser Microscope

    Science.gov (United States)

    Awamura, D.; Ode, T.; Yonezawa, M.

    1988-01-01

    A confocal color laser microscope which utilizes a three color laser light source (Red: He-Ne, Green: Ar, Blue: Ar) has been developed and is finding useful applications in the semiconductor field. The color laser microscope, when compared to a conventional microscope, offers superior color separation, higher resolution, and sharper contrast. Recently some new functions including a Focus Scan Memory, a Surface Profile Measurement System, a Critical Dimension Measurement system (CD) and an Optical Beam Induced Current Function (OBIC) have been developed for the color laser microscope. This paper will discuss these new features.

  13. High Power Vanadate lasers

    CSIR Research Space (South Africa)

    Strauss

    2006-07-01

    Full Text Available stream_source_info Strauss1_2006.pdf.txt stream_content_type text/plain stream_size 3151 Content-Encoding UTF-8 stream_name Strauss1_2006.pdf.txt Content-Type text/plain; charset=UTF-8 Laser Research Institute... University of Stellenbosch www.laser-research.co.za High Power Vanadate lasers H.J.Strauss, Dr. C. Bollig, R.C. Botha, Prof. H.M. von Bergmann, Dr. J.P. Burger Aims 1) To develop new techniques to mount laser crystals, 2) compare the lasing properties...

  14. Laser adaptive holographic hydrophone

    Energy Technology Data Exchange (ETDEWEB)

    Romashko, R V; Kulchin, Yu N; Bezruk, M N; Ermolaev, S A [Institute of Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Vladivostok (Russian Federation)

    2016-03-31

    A new type of a laser hydrophone based on dynamic holograms, formed in a photorefractive crystal, is proposed and studied. It is shown that the use of dynamic holograms makes it unnecessary to use complex optical schemes and systems for electronic stabilisation of the interferometer operating point. This essentially simplifies the scheme of the laser hydrophone preserving its high sensitivity, which offers the possibility to use it under a strong variation of the environment parameters. The laser adaptive holographic hydrophone implemented at present possesses the sensitivity at a level of 3.3 mV Pa{sup -1} in the frequency range from 1 to 30 kHz. (laser hydrophones)

  15. Introduction to laser technology

    CERN Document Server

    Hitz, C Breck; Hecht, Jeff

    2012-01-01

    The only introductory text on the market today that explains the underlying physics and engineering applicable to all lasersAlthough lasers are becoming increasingly important in our high-tech environment, many of the technicians and engineers who install, operate, and maintain them have had little, if any, formal training in the field of electro-optics. This can result in less efficient usage of these important tools. Introduction to Laser Technology, Fourth Edition provides readers with a good understanding of what a laser is and what it can and cannot do. The book explains what types of las.

  16. Laser-induced interactions

    International Nuclear Information System (INIS)

    Green, W.R.

    1979-01-01

    This dissertation discusses some of the new ways that lasers can be used to control the energy flow in a medium. Experimental and theoretical considerations of the laser-induced collision are discussed. The laser-induced collision is a process in which a laser is used to selectively transfer energy from a state in one atomic or molecular species to another state in a different species. The first experimental demonstration of this process is described, along with later experiments in which lasers were used to create collisional cross sections as large as 10 - 13 cm 2 . Laser-induced collisions utilizing both a dipole-dipole interaction and dipole-quadrupole interaction have been experimentally demonstrated. The theoretical aspects of other related processes such as laser-induced spin-exchange, collision induced Raman emission, and laser-induced charge transfer are discussed. Experimental systems that could be used to demonstrate these various processes are presented. An experiment which produced an inversion of the resonance line of an ion by optical pumping of the neutral atom is described. This type of scheme has been proposed as a possible method for constructing VUV and x-ray lasers

  17. Jet laser ion source

    International Nuclear Information System (INIS)

    Dem'yanov, A.V.; Sidorov, S.V.

    1994-01-01

    External laser injector of multicharged ions (MCI) is developed in which wide-aperture aberration-free wire gauze spherical shape electrodes are applied for effective MCI extraction from laser plasma and beam focusing. Axial plasma compression by solenoid magnetic field is used to reduce ion losses due to transverse movement of the scattering laser plasma. Transverse magnetic field created by another solenoid facilitates the effective laser plasma braking and consequently, leads to the narrowing of energy spectrum of plasma ions and its shift towards lower energies. 2 refs.; 3 figs

  18. Free electron laser

    International Nuclear Information System (INIS)

    Ortega, J.M.; Billardon, M.

    1986-01-01

    Operation principle of a laser and an oscillator are recalled together with the klystron one. In the free electron laser, electrons go through an undulator or an optical klystron. Principles of the last one are given. The two distinct ways of producing coherent radiation with an undulator and an optical klystron are presented. The first one is the use of the free electron laser, the second is to make use of the spontaneous emission generation (harmonics generation). The different current types of free electron lasers are presented (Stanford, Los Alamos, Aco at Orsay). Prospects and applications are given in conclusion [fr

  19. Laser cooling of solids

    CERN Document Server

    Petrushkin, S V

    2009-01-01

    Laser cooling is an important emerging technology in such areas as the cooling of semiconductors. The book examines and suggests solutions for a range of problems in the development of miniature solid-state laser refrigerators, self-cooling solid-state lasers and optical echo-processors. It begins by looking at the basic theory of laser cooling before considering such topics as self-cooling of active elements of solid-state lasers, laser cooling of solid-state information media of optical echo-processors, and problems of cooling solid-state quantum processors. Laser Cooling of Solids is an important contribution to the development of compact laser-powered cryogenic refrigerators, both for the academic community and those in the microelectronics and other industries. Provides a timely review of this promising field of research and discusses the fundamentals and theory of laser cooling Particular attention is given to the physics of cooling processes and the mathematical description of these processes Reviews p...

  20. Laser beam diagnostics for kilowatt power pulsed YAG laser

    International Nuclear Information System (INIS)

    Liu, Yi; Leong, Keng H.

    1992-01-01

    There is a growing need for high power YAG laser beam diagnostics with the recent introduction of such lasers in laser material processing. In this paper, we will describe the use of a commercially available laser beam analyzer (Prometec) to profile the laser beam from a 1600 W pulsed Nd:YAG laser that has a 1 mm fiber optic beam delivery system. The selection of laser pulse frequency and pulse width for the measurement is discussed. Laser beam propagation parameters by various optical components such as fibers and lenses can be determined from measurements using this device. The importance of such measurements will be discussed