Control of emitted light polarization in a 1310 nm dilute nitride spin-vertical cavity surface emitting laser subject to circularly polarized optical injection

Energy Technology Data Exchange (ETDEWEB)

Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Hurtado, A.; Al Seyab, R. K.; Henning, I. D.; Adams, M. J. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Korpijarvi, V.-M.; Guina, M. [Optoelectronics Research Centre (ORC), Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)

2014-11-03

We experimentally demonstrate the control of the light polarization emitted by a 1310 nm dilute nitride spin-Vertical Cavity Surface Emitting Laser (VCSEL) at room temperature. This is achieved by means of a combination of polarized optical pumping and polarized optical injection. Without external injection, the polarization of the optical pump controls that of the spin-VCSEL. However, the addition of the externally injected signal polarized with either left- (LCP) or right-circular polarization (RCP) is able to control the polarization of the spin-VCSEL switching it at will to left- or right-circular polarization. A numerical model has been developed showing a very high degree of agreement with the experimental findings.

Development of a compact vertical-cavity surface-emitting laser end-pumped actively Q-switched laser for laser-induced breakdown spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Li, Shuo; Chen, Rongzhang; Nelsen, Bryan; Chen, Kevin, E-mail: pec9@pitt.edu [Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15260 (United States); Liu, Lei; Huang, Xi; Lu, Yongfeng [Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States)

2016-03-15

This paper reports the development of a compact and portable actively Q-switched Nd:YAG laser and its applications in laser-induced breakdown spectroscopy (LIBS). The laser was end-pumped by a vertical-cavity surface-emitting laser (VCSEL). The cavity lases at a wavelength of 1064 nm and produced pulses of 16 ns with a maximum pulse energy of 12.9 mJ. The laser exhibits a reliable performance in terms of pulse-to-pulse stability and timing jitter. The LIBS experiments were carried out using this laser on NIST standard alloy samples. Shot-to-shot LIBS signal stability, crater profile, time evolution of emission spectra, plasma electron density and temperature, and limits of detection were studied and reported in this paper. The test results demonstrate that the VCSEL-pumped solid-state laser is an effective and compact laser tool for laser remote sensing applications.

Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm

International Nuclear Information System (INIS)

Chang, S.J.; Yu, H.C.; Su, Y.K.; Chen, I.L.; Lee, T.D.; Lu, C.M.; Chiou, C.H.; Lee, Z.H.; Yang, H.P.; Sung, C.P.

2005-01-01

Highly strained GaAs-based all-epitaxial oxide confined vertical cavity surface emitting lasers (VCSELs) emitting in 1.25 μm were fabricated. Compared with the designed cavity resonance, it was found that lasing wavelength blue shifted by 29 nm when the driving current was small. The observation of such oxide mode is attributed to the effective optical thickness shrinkage of the oxide layer, and large detuning between the gain peak and cavity resonance

Acetone vapor sensing using a vertical cavity surface emitting laser diode coated with polystyrene

DEFF Research Database (Denmark)

Ansbæk, Thor; Nielsen, Claus Højgaard; Larsen, Niels Bent

2009-01-01

We report theoretical and experimental on a new vapor sensor, using a single-mode vertical-cavity surface-emitting laser (VCSEL) coated with a polymer sensor coating, which can detect acetone vapor at a volume fraction of 2.5%. The sensor provides the advantage of standard packaging, small form...

Transverse and polarization effects in index-guided vertical-cavity surface-emitting lasers

International Nuclear Information System (INIS)

Torre, M. S.; Masoller, C.; Mandel, Paul

2006-01-01

We study numerically the polarization dynamics of vertical-cavity surface-emitting lasers (VCSEL's) operating in the fundamental transverse mode. We use an extension of the spin-flip model that not only accounts for the vector nature of the laser field, but also considers spatial transverse effects. The model assumes two orthogonal, linearly polarized fields, which are coupled to two carrier populations, associated with different spin sublevels of the conduction and valence bands in the quantum-well active region. Spatial effects are taken into account by considering transverse profiles for the two polarizations, for the two carrier populations, and for the carrier diffusion. The optical profile is the LP 01 mode, suitable for describing index-guided VCSEL's with cylindrical symmetry emitting on the fundamental transverse mode for both polarizations. We find that in small-active-region VCSEL's, fast carrier diffusion induces self-sustained oscillations of the total laser output, which are not present in larger-area devices or with slow carrier diffusion. These self-pulsations appear close to threshold, and, as the injection current increases, they grow in amplitude; however, there is saturation and the self-pulsations disappear at higher injection levels. The dependence of the oscillation amplitude on various laser parameters is investigated, and the results are found to be in good qualitative agreement with those reported by Van der Sande et al. [Opt. Lett. 29, 53 (2004)], based on a rate-equation model that takes into account transverse inhomogeneities through an intensity-dependent confinement factor

Recent Advances of VCSEL Photonics

Science.gov (United States)

Koyama, Fumio

2006-12-01

A vertical-cavity surface emitting laser (VCSEL) was invented 30 years ago. A lot of unique features can be expected, such as low-power consumption, wafer-level testing, small packaging capability, and so on. The market of VCSELs has been growing up rapidly in recent years, and they are now key devices in local area networks using multimode optical fibers. Also, long wavelength VCSELs are currently attracting much interest for use in single-mode fiber metropolitan area and wide area network applications. In addition, a VCSEL-based disruptive technology enables various consumer applications such as a laser mouse and laser printers. In this paper, the recent advance of VCSEL photonics will be reviewed, which include the wavelength extension of single-mode VCSELs and their wavelength integration/control. Also, this paper explores the potential and challenges for new functions of VCSELs toward optical signal processing.

MBE growth of VCSELs for high volume applications

Science.gov (United States)

Jäger, Roland; Riedl, Michael C.

2011-05-01

Mass market applications like laser computer mouse or optical data transmission based on vertical-cavity surface-emitting laser (VCSEL) chips need a high over all yield including epitaxy, processing, dicing, mounting and testing. One yield limitation for VCSEL structures is the emission wavelength variation of the substrate surface area leading to the fraction on laser chips which are below or above the specification limits. For most 850 nm VCSEL products a resonator wavelength variation of ±2 nm is common. This represents an average resonator thickness variation of much less than 1% which is quite challenging to be fulfilled on the entire processed wafer surface area. A high over all yield is demonstrated on MBE grown VCSEL structures.

Proton Irradiation Effects in Oxide-Confined Vertical Cavity Surface Emitting Laser (VCSEL) Diodes

International Nuclear Information System (INIS)

Armendariz, M.G.; Barnes, C.E.; Choquette, K.D.; Guertin, S.; Hash, G.L.; Schwank, J.R.; Swift, G.M.

1999-01-01

Recent space experience has shown that the use of commercial optocouplers can be problematic in spacecraft, such as TOPEX/Poseidon, that must operate in significant radiation environments. Radiation--induced failures of these devices have been observed in space and have been further documented at similar radiation doses in the laboratory. The ubiquitous use of optocouplers in spacecraft systems for a variety of applications, such as electrical isolation, switching and power transfer, is indicative of the need for optocouplers that can withstand the space radiation environment. In addition, the distributed nature of their use implies that it is not particularly desirable to shield optocouplers for use in radiation environments. Thus, it will be important for the space community to have access to radiation hardened/tolerant optocouplers. For many microelectronic and photonic devices, it is difficult to achieve radiation hardness without sacrificing performance. However, in the case of optocouplers, one should be able to achieve both superior radiation hardness and performance for such characteristics as switching speed, current transfer ratio (CTR), minimum power usage and array power transfer, if standard light emitting diodes (LEDs), such as those in the commercial optocouplers mentioned above, are avoided, and VCSELs are employed as the emitter portion of the optocoupler. The physical configuration of VCSELs allows one to achieve parallel use of an array of devices and construct a multichannel optocoupler in the standard fashion with the emitters and detectors looking at each other. In addition, detectors similar in structure to the VCSELs can be fabricated which allows bidirectional functionality of the optocoupler. Recent discussions suggest that VCSELs will enjoy widespread applications in the telecommunications and data transfer fields

Large-area high-power VCSEL pump arrays optimized for high-energy lasers

Science.gov (United States)

Wang, Chad; Geske, Jonathan; Garrett, Henry; Cardellino, Terri; Talantov, Fedor; Berdin, Glen; Millenheft, David; Renner, Daniel; Klemer, Daniel

2012-06-01

Practical, large-area, high-power diode pumps for one micron (Nd, Yb) as well as eye-safer wavelengths (Er, Tm, Ho) are critical to the success of any high energy diode pumped solid state laser. Diode efficiency, brightness, availability and cost will determine how realizable a fielded high energy diode pumped solid state laser will be. 2-D Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays are uniquely positioned to meet these requirements because of their unique properties, such as low divergence circular output beams, reduced wavelength drift with temperature, scalability to large 2-D arrays through low-cost and high-volume semiconductor photolithographic processes, high reliability, no catastrophic optical damage failure, and radiation and vacuum operation tolerance. Data will be presented on the status of FLIR-EOC's VCSEL pump arrays. Analysis of the key aspects of electrical, thermal and mechanical design that are critical to the design of a VCSEL pump array to achieve high power efficient array performance will be presented.

Final report on LDRD project : narrow-linewidth VCSELs for atomic microsystems.

Energy Technology Data Exchange (ETDEWEB)

Chow, Weng Wah; Geib, Kent Martin; Peake, Gregory Merwin; Serkland, Darwin Keith

2011-09-01

Vertical-cavity surface-emitting lasers (VCSELs) are well suited for emerging photonic microsystems due to their low power consumption, ease of integration with other optical components, and single frequency operation. However, the typical VCSEL linewidth of 100 MHz is approximately ten times wider than the natural linewidth of atoms used in atomic beam clocks and trapped atom research, which degrades or completely destroys performance in those systems. This report documents our efforts to reduce VCSEL linewidths below 10 MHz to meet the needs of advanced sub-Doppler atomic microsystems, such as cold-atom traps. We have investigated two complementary approaches to reduce VCSEL linewidth: (A) increasing the laser-cavity quality factor, and (B) decreasing the linewidth enhancement factor (alpha) of the optical gain medium. We have developed two new VCSEL devices that achieved increased cavity quality factors: (1) all-semiconductor extended-cavity VCSELs, and (2) micro-external-cavity surface-emitting lasers (MECSELs). These new VCSEL devices have demonstrated linewidths below 10 MHz, and linewidths below 1 MHz seem feasible with further optimization.

Characteristics of VCSELs and VCSEL arrays for optical data links

Science.gov (United States)

Gaw, Craig A.; Jiang, Wenbin; Lebby, Michael S.; Kiely, Philip A.; Claisse, Paul R.

1997-05-01

High performance, low cost, and highly reliable vertical cavity surface emitting lasers (VCSELs) have been developed and are currently being used in both parallel and serial optical interconnect applications. For example, Motorola's OPTOBUSTM parallel optical interconnect relies heavily on the unique characteristics of arrays of GaAs based VCSELs emitting at 850 nm to achieve its stringent performance goals at low cost. Representative parametric results of discrete VCSELs and VCSEL arrays will be compared, including `optical power output-current' and `current-voltage' curves, optical wall plug efficiencies, and modulation characteristics. The use of statistical parameter analysis across a wafer and subsequent parametric wafer maps has proven to be a valuable tool for maintaining control of the fabrication process. The consistency of VCSEL parameters across individual VCSEL arrays will be discussed. VCSELs are very robust devices. Life times at room ambient in excess of 3E6 hours have been reported by several groups. Degradation behavior of selected device parameters will be discussed. Failure analysis demonstrating the effect of proton implant depth on reliability will be presented. ESD damage at forward bias is shown to be process related, while ESD damage at reverse bias is shown to be material related. These VCSELs are ESD Class 1 devices.

Comparison of Mesa and Device Diameter Variation in Double Wafer-Fused Multi Quantum-Well, Long-Wavelength, Vertical Cavity Surface Emitting Lasers

International Nuclear Information System (INIS)

Menon, P.S.; Kandiah, K.; Burhanuddin Yeop Majlis; Shaari, S.

2011-01-01

Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) have profound advantages compared to traditional edge-emitting lasers offering improved properties with respect to mode selectivity, fibre coupling, threshold currents and integration into 2D arrays or with other electronic devices. Its commercialization is gaining momentum as the local and access network in optical communication system expand. Numerical modeling of LW-VCSEL utilizing wafer-fused InP-based multi-quantum wells (MQW) and GaAs-based distributed Bragg reflectors (DBRs) is presented in this paper. Emphasis is on the device and mesa/pillar diameter design parameter comparison and its effect on the device characteristics. (author)

A Study of the interaction of radiation and semiconductor lasers: an analysis of transient and permanent effects induced on edge emitting and vertical cavity surface emitting laser diodes

International Nuclear Information System (INIS)

Pailharey, Eric

2000-01-01

The behavior of laser diodes under transient environment is presented in this work. The first section describes the basic phenomena of radiation interaction with matter. The radiative environments, the main characteristics of laser diodes and the research undertaken on the subject are presented and discussed. The tests on 1300 nm edge emitting laser diode are presented in the second section. The response to a transient ionizing excitation is explored using a 532 nm laser beam. The time of return to steady state after the perturbation is decomposed into several steps: decrease of the optical power during excitation, turn-on delay, relaxation oscillations and optical power offset. Their origins are analyzed using the device structure. To include all the phenomena in a numerical simulation of the device, an individual study of low conductivity materials used for the lateral confinement of the current density is undertaken. The effects of a single particle traversing the optical cavity and an analysis of permanent damages induced by neutrons are also determined. In the last section, 850 nm vertical cavity surface emitting laser diodes (VCSEL) are studied. The behavior of these devices which performances are in constant evolution, is investigated as a function of both temperature and polarization. Then VCSEL are submitted to transient ionizing irradiation and their responses are compared to those of edge emitting diodes. When proton implantation is used in the process, we observe the same behavior for both technologies. VCSEL were submitted to neutron fluence and we have studied the influence of the damages on threshold current, emission patterns and maximum of optical power. (author) [fr

Exploiting broad-area surface emitting lasers to manifest the path-length distributions of finite-potential quantum billiards.

Science.gov (United States)

Yu, Y T; Tuan, P H; Chang, K C; Hsieh, Y H; Huang, K F; Chen, Y F

2016-01-11

Broad-area vertical-cavity surface-emitting lasers (VCSELs) with different cavity sizes are experimentally exploited to manifest the influence of the finite confinement strength on the path-length distribution of quantum billiards. The subthreshold emission spectra of VCSELs are measured to obtain the path-length distributions by using the Fourier transform. It is verified that the number of the resonant peaks in the path-length distribution decreases with decreasing the confinement strength. Theoretical analyses for finite-potential quantum billiards are numerically performed to confirm that the mesoscopic phenomena of quantum billiards with finite confinement strength can be analogously revealed by using broad-area VCSELs.

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

KAUST Repository

Leonard, J. T.

2016-03-01

We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

KAUST Repository

Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Shen, Chao; Margalith, T.; Ng, Tien Khee; Denbaars, S. P.; Ooi, Boon S.; Speck, J. S.; Nakamura, S.

2016-01-01

We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

Grüne oberflächenemittierende Halbleiterlaser (VCSEL) auf Basis von II-VI-Verbindungen

OpenAIRE

Kruse, Carsten

2004-01-01

Semiconductor-based laser diodes represent a key technology, which is used e.g. for optical data storage, data transmission and metrology purposes. However, the usual edge-emitting device design has some drawbacks concerning the properties of the emitted laser beam. This can be overcome by a more sophisticated approach called vertical-cavity surface emitting laser (VCSEL). The aim of the research within this thesis was the realization of a green fully-epitaxial VCSEL based on the II-VI materi...

Laser self-mixing interferometry in VCSELs - an ultra-compact and massproduceable deflection detection system for nanomechanical polymer cantilever sensors

DEFF Research Database (Denmark)

Larsson, David; Yvind, Kresten; Hvam, Jørn Märcher

2008-01-01

We have realised an ultra-compact deflection detection system based on laser self-mixing interferometry in a Vertical-Cavity Surface-Emitting Laser (VCSEL). The system can be used together with polymer nanomechanical cantilevers to form chemical sensors capable of detecting less than 1nm deflection....

InAs quantum wires on InP substrate for VCSEL applications

OpenAIRE

Lamy , Jean-Michel; Paranthoën , Cyril; Levallois , Christophe; Nakkar , Abdulhadi; Folliot , Hervé; Dehaese , Olivier; Le Corre , Alain; Loualiche , Slimane; Castany , Olivier; Dupont , Laurent

2008-01-01

International audience; Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 µm photoluminescence along the [1-10] crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL lase...

Vertical Cavity Surface Emitting Laser for Operation at 1.5 µm with Integral AlGaInAs/InP Bragg mirrors

OpenAIRE

Linnik, M.; Christou, A.

2001-01-01

The design and performance of a low threshold selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) fabricated for operation at a wavelength of 1.55 µm is based on III-V quaternary semiconductor alloys and is grown by Molecular Beam Epitaxy technique. The theoretical investigation of the optical properties of the compound semiconductor alloys allows one to select the optimum materials for highly reflective Bragg mirrors. The simulation of the designed VCSEL performance has been ...

High-power, format-flexible, 885-nm vertical-cavity surface-emitting laser arrays

Science.gov (United States)

Wang, Chad; Talantov, Fedor; Garrett, Henry; Berdin, Glen; Cardellino, Terri; Millenheft, David; Geske, Jonathan

2013-03-01

High-power, format flexible, 885 nm vertical-cavity surface-emitting laser (VCSEL) arrays have been developed for solid-state pumping and illumination applications. In this approach, a common VCSEL size format was designed to enable tiling into flexible formats and operating configurations. The fabrication of a common chip size on ceramic submount enables low-cost volume manufacturing of high-power VCSEL arrays. This base VCSEL chip was designed to be 5x3.33 mm2, and produced up to 50 Watts of peak continuous wave (CW) power. To scale to higher powers, multiple chips can be tiled into a combination of series or parallel configurations tailored to the application driver conditions. In actively cooled CW operation, the VCSEL array chips were packaged onto a single water channel cooler, and we have demonstrated 0.5x1, 1x1, and 1x3 cm2 formats, producing 150, 250, and 500 Watts of peak power, respectively, in under 130 A operating current. In QCW operation, the 1x3 cm2 VCSEL module, which contains 18 VCSEL array chips packaged on a single water cooler, produced over 1.3 kW of peak power. In passively cooled packages, multiple chip configurations have been developed for illumination applications, producing over 300 Watts of peak power in QCW operating conditions. These VCSEL chips use a substrate-removed structure to allow for efficient thermal heatsinking to enable high-power operation. This scalable, format flexible VCSEL architecture can be applied to wavelengths ranging from 800 to 1100 nm, and can be used to tailor emission spectral widths and build high-power hyperspectral sources.

1.3 μm wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: A prospect for polarization control

Science.gov (United States)

Okuno, Yae L.; Geske, Jon; Gan, Kian-Giap; Chiu, Yi-Jen; DenBaars, Steven P.; Bowers, John E.

2003-04-01

We propose and demonstrate a long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of a (311)B InP-based active region and (100) GaAs-based distributed Bragg reflectors (DBRs), with an aim to control the in-plane polarization of output power. Crystal growth on (311)B InP substrates was performed under low-migration conditions to achieve good crystalline quality. The VCSEL was fabricated by wafer bonding, which enables us to combine different materials regardless of their lattice and orientation mismatch without degrading their quality. The VCSEL was polarized with a power extinction ratio of 31 dB.

20 Gbit/s error free transmission with ~850 nm GaAs-based vertical cavity surface emitting lasers (VCSELs) containing InAs-GaAs submonolayer quantum dot insertions

Science.gov (United States)

Lott, J. A.; Shchukin, V. A.; Ledentsov, N. N.; Stinz, A.; Hopfer, F.; Mutig, A.; Fiol, G.; Bimberg, D.; Blokhin, S. A.; Karachinsky, L. Y.; Novikov, I. I.; Maximov, M. V.; Zakharov, N. D.; Werner, P.

2009-02-01

We report on the modeling, epitaxial growth, fabrication, and characterization of 830-845 nm vertical cavity surface emitting lasers (VCSELs) that employ InAs-GaAs quantum dot (QD) gain elements. The GaAs-based VCSELs are essentially conventional in design, grown by solid-source molecular beam epitaxy, and include top and bottom gradedheterointerface AlGaAs distributed Bragg reflectors, a single selectively-oxidized AlAs waveguiding/current funneling aperture layer, and a quasi-antiwaveguiding microcavity. The active region consists of three sheets of InAs-GaAs submonolayer insertions separated by AlGaAs matrix layers. Compared to QWs the InAs-GaAs insertions are expected to offer higher exciton-dominated modal gain and improved carrier capture and retention, thus resulting in superior temperature stability and resilience to degradation caused by operating at the larger switching currents commonly employed to increase the data rates of modern optical communication systems. We investigate the robustness and temperature performance of our QD VCSEL design by fabricating prototype devices in a high-frequency ground-sourceground contact pad configuration suitable for on-wafer probing. Arrays of VCSELs are produced with precise variations in top mesa diameter from 24 to 36 μm and oxide aperture diameter from 1 to 12 μm resulting in VCSELs that operate in full single-mode, single-mode to multi-mode, and full multi-mode regimes. The single-mode QD VCSELs have room temperature threshold currents below 0.5 mA and peak output powers near 1 mW, whereas the corresponding values for full multi-mode devices range from about 0.5 to 1.5 mA and 2.5 to 5 mW. At 20°C we observe optical transmission at 20 Gb/s through 150 m of OM3 fiber with a bit error ratio better than 10-12, thus demonstrating the great potential of our QD VCSELs for applications in next-generation short-distance optical data communications and interconnect systems.

All-VCSEL Transmitters With Remote Optical Injection for WDM-OFDM-PON

DEFF Research Database (Denmark)

Deng, Lei; Zhao, Ying; Pang, Xiaodan

2014-01-01

We report on a novel scheme that uses vertical cavity surface emitting lasers (VCSELs) and remote optical injection technique in the hybrid wavelength division multiplexing orthogonal frequency division multiplexing (OFDM) passive optical network. In the proposed scheme, 1.55-$\\mu{\\rm m}$ VCSELs ...

The vertical-cavity surface-emitting laser incorporating a high contrast grating mirror as a sensing device

Science.gov (United States)

Marciniak, Magdalena; Gebski, Marcin; Piskorski, Łukasz; Dems, Maciej; Wasiak, M.; Panajotov, Krassimir; Lott, James A.; Czyszanowski, Tomasz

2018-02-01

We propose a novel optical sensing system based on one device that both emits and detects light consisting of a verticalcavity surface-emitting laser (VCSEL) incorporating an high contrast grating (HCG) as a top mirror. Since HCGs can be very sensitive to the optical properties of surrounding media, they can be used to detect gases and liquid. The presence of a gas or a liquid around an HCG mirror causes changes of the power reflectance of the mirror, which corresponds to changes of the VCSEL's cavity quality factor and current-voltage characteristic. By observation of the current-voltage characteristic we can collect information about the medium around the HCG. In this paper we investigate how the properties of the HCG mirror depend on the refractive index of the HCG surroundings. We present results of a computer simulation performed with a three-dimensional fully vectorial model. We consider silicon HCGs on silica and designed for a 1300 nm VCSEL emission wavelength. We demonstrate that our approach can be applied to other wavelengths and material systems.

Chaos synchronization in vertical-cavity surface-emitting laser based on rotated polarization-preserved optical feedback.

Science.gov (United States)

Nazhan, Salam; Ghassemlooy, Zabih; Busawon, Krishna

2016-01-01

In this paper, the influence of the rotating polarization-preserved optical feedback on the chaos synchronization of a vertical-cavity surface-emitting laser (VCSEL) is investigated experimentally. Two VCSELs' polarization modes (XP) and (YP) are gradually rotated and re-injected back into the VCSEL. The anti-phase dynamics synchronization of the two polarization modes is evaluated using the cross-correlation function. For a fixed optical feedback, a clear relationship is found between the cross-correlation coefficient and the polarization angle θp. It is shown that high-quality anti-phase polarization-resolved chaos synchronization is achieved at higher values of θp. The maximum value of the cross-correlation coefficient achieved is -0.99 with a zero time delay over a wide range of θp beyond 65° with a poor synchronization dynamic at θp less than 65°. Furthermore, it is observed that the antiphase irregular oscillation of the XP and YP modes changes with θp. VCSEL under the rotating polarization optical feedback can be a good candidate as a chaotic synchronization source for a secure communication system.

Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

KAUST Repository

Leonard, J. T.; Cohen, D. A.; Yonkee, B. P.; Farrell, R. M.; Margalith, T.; Lee, S.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

2015-01-01

© 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm²), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

KAUST Repository

Leonard, J. T.

2015-07-06

© 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm²), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

International Nuclear Information System (INIS)

Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

2015-01-01

We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J th ) of ∼3.5 kA/cm 2 , compared to the ITO VCSEL J th of 8 kA/cm 2 . The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

Energy Technology Data Exchange (ETDEWEB)

Leonard, J. T., E-mail: jtleona01@gmail.com; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2015-08-31

We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J{sub th}) of ∼3.5 kA/cm{sup 2}, compared to the ITO VCSEL J{sub th} of 8 kA/cm{sup 2}. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.

GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

Science.gov (United States)

Lee, SeungGeun; Forman, Charles A.; Lee, Changmin; Kearns, Jared; Young, Erin C.; Leonard, John T.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

2018-06-01

We report the first demonstration of III–nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal–organic chemical vapor deposition (MOCVD). For the TJs, n++-GaN was grown on in-situ activated p++-GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of ∼15 mA (10 kA/cm2), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.

Attractor hopping between polarization dynamical states in a vertical-cavity surface-emitting laser subject to parallel optical injection

Science.gov (United States)

Denis-le Coarer, Florian; Quirce, Ana; Valle, Angel; Pesquera, Luis; Rodríguez, Miguel A.; Panajotov, Krassimir; Sciamanna, Marc

2018-03-01

We present experimental and theoretical results of noise-induced attractor hopping between dynamical states found in a single transverse mode vertical-cavity surface-emitting laser (VCSEL) subject to parallel optical injection. These transitions involve dynamical states with different polarizations of the light emitted by the VCSEL. We report an experimental map identifying, in the injected power-frequency detuning plane, regions where attractor hopping between two, or even three, different states occur. The transition between these behaviors is characterized by using residence time distributions. We find multistability regions that are characterized by heavy-tailed residence time distributions. These distributions are characterized by a -1.83 ±0.17 power law. Between these regions we find coherence enhancement of noise-induced attractor hopping in which transitions between states occur regularly. Simulation results show that frequency detuning variations and spontaneous emission noise play a role in causing switching between attractors. We also find attractor hopping between chaotic states with different polarization properties. In this case, simulation results show that spontaneous emission noise inherent to the VCSEL is enough to induce this hopping.

Single-mode temperature and polarisation-stable high-speed 850nm vertical cavity surface emitting lasers

International Nuclear Information System (INIS)

Nazaruk, D E; Blokhin, S A; Maleev, N A; Bobrov, M A; Pavlov, M M; Kulagina, M M; Vashanova, K A; Zadiranov, Yu M; Ustinov, V M; Kuzmenkov, A G; Vasil'ev, A P; Gladyshev, A G; Blokhin, A A; Salut, 7 Larina Str, N Novgorod, 603950 (Russian Federation))" data-affiliation=" (JSV Salut, 7 Larina Str, N Novgorod, 603950 (Russian Federation))" >Fefelov, A G

2014-01-01

A new intracavity-contacted design to realize temperature and polarization-stable high-speed single-mode 850 nm vertical cavity surface emitting lasers (VCSELs) grown by molecular-beam epitaxy is proposed. Temperature dependences of static and dynamic characteristics of the 4.5 pm oxide aperture InGaAlAs VCSEL were investigated in detail. Due to optimal gain-cavity detuning and enhanced carrier localization in the active region the threshold current remains below 0.75 mA for the temperature range within 20-90°C, while the output power exceeds 1 mW up to 90°C. Single-mode operation with side-mode suppression ratio higher than 30 dB and orthogonal polarization suppression ratio more than 18 dB was obtained in the whole current and temperature operation range. Device demonstrates serial resistance less than 250 Ohm, which is rather low for any type of single-mode short- wavelength VCSELs. VCSEL demonstrates temperature robust high-speed operation with modulation bandwidth higher than 13 GHz in the entire temperature range of 20-90°C. Despite high resonance frequency the high-speed performance of developed VCSELs was limited by the cut-off frequency of the parasitic low pass filter created by device resistances and capacitances. The proposed design is promising for single-mode high-speed VCSEL applications in a wide spectral range

Single-mode electrically pumped GaSb-based VCSELs emitting continuous-wave at 2.4 and 2.6 μm

International Nuclear Information System (INIS)

Bachmann, Alexander; Arafin, Shamsul; Kashani-Shirazi, Kaveh

2009-01-01

Vertical-cavity surface-emitting lasers (VCSELs) are perfect light sources for spectroscopic applications, where properties such as continuous-wave (cw) operation, single-mode emission, high lifetime and often low power consumption are crucial. For applications such as tunable diode laser absorption spectroscopy (TDLAS), there is a growing interest in laser devices emitting in the near- to mid-infrared wavelength range, where many environmentally and technologically important gases show strong absorption lines. The (AlGaIn)(AsSb) material system based on GaSb is the material of choice for covering the 2.0-3.3 μm range. In this paper, we report on electrically pumped single-mode VCSELs with emission wavelengths of 2.4 and 2.6 μm, operating cw at room temperature and beyond. By (electro-) thermal tuning, the emission wavelength can be tuned mode-hop free over a range of several nanometers. In addition, low threshold currents of several milliamperes promise mobile application. In the devices, a structured buried tunnel junction with subsequent overgrowth has been used in order to achieve efficient current confinement, reduced optical losses and increased electrical conductivity. Furthermore, strong optical confinement is introduced in the lasers due to laterally differing cavity lengths.

Operation of a novel hot-electron vertical-cavity surface-emitting laser

Science.gov (United States)

Balkan, Naci; O'Brien-Davies, Angela; Thoms, A. B.; Potter, Richard J.; Poolton, Nigel; Adams, Michael J.; Masum, J.; Bek, Alpan; Serpenguzel, Ali; Aydinli, Atilla; Roberts, John S.

1998-07-01

The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga1-xAlxAs p- n junction. It utilizes hot electron transport parallel to the layers and injection of hot electron hole pairs into the quantum well through a combination of mechanisms including tunnelling, thermionic emission and diffusion of `lucky' carriers. Super Radiant HELLISH-1 is an advanced structure incorporating a lower distributed Bragg reflector (DBR). Combined with the finite reflectivity of the upper semiconductor-air interface reflectivity it defines a quasi- resonant cavity enabling emission output from the top surface with a higher spectral purity. The output power has increased by two orders of magnitude and reduced the full width at half maximum (FWHM) to 20 nm. An upper DBR added to the structure defines HELLISH-VCSEL which is currently the first operational hot electron surface emitting laser and lases at room temperature with a 1.5 nm FWHM. In this work we demonstrate and compare the operation of UB-HELLISH-1 and HELLISH-VCSEL using experimental and theoretical reflectivity spectra over an extensive temperature range.

High-power VCSELs for smart munitions

Science.gov (United States)

Geske, Jon; MacDougal, Michael; Cole, Garrett; Snyder, Donald

2006-08-01

The next generation of low-cost smart munitions will be capable of autonomously detecting and identifying targets aided partly by the ability to image targets with compact and robust scanning rangefinder and LADAR capabilities. These imaging systems will utilize arrays of high performance, low-cost semiconductor diode lasers capable of achieving high peak powers in pulses ranging from 5 to 25 nanoseconds in duration. Aerius Photonics is developing high-power Vertical-Cavity Surface-Emitting Lasers (VCSELs) to meet the needs of these smart munitions applications. The authors will report the results of Aerius' development program in which peak pulsed powers exceeding 60 Watts were demonstrated from single VCSEL emitters. These compact packaged emitters achieved pulse energies in excess of 1.5 micro-joules with multi kilo-hertz pulse repetition frequencies. The progress of the ongoing effort toward extending this performance to arrays of VCSEL emitters and toward further improving laser slope efficiency will be reported.

Advances and new functions of VCSEL photonics

Science.gov (United States)

Koyama, Fumio

2014-11-01

A vertical cavity surface emitting laser (VCSEL) was born in Japan. The 37 years' research and developments opened up various applications including datacom, sensors, optical interconnects, spectroscopy, optical storages, printers, laser displays, laser radar, atomic clock and high power sources. A lot of unique features have been already proven, such as low power consumption, a wafer level testing and so on. The market of VCSELs has been growing up rapidly and they are now key devices in local area networks based on multi-mode optical fibers. Optical interconnections in data centers and supercomputers are attracting much interest. In this paper, the advances on VCSEL photonics will be reviewed. We present the high-speed modulation of VCSELs based on a coupled cavity structure. For further increase in transmission capacity per fiber, the wavelength engineering of VCSEL arrays is discussed, which includes the wavelength stabilization and wavelength tuning based on a micro-machined cantilever structure. We also address a lateral integration platform and new functions, including high-resolution beam scanner, vortex beam creation and large-port free space wavelength selective switch with a Bragg reflector waveguide.

Advanced vectorial simulation of VCSELs with nano structures invited paper

DEFF Research Database (Denmark)

Chung, Il-Sug; Mørk, Jesper

2009-01-01

The single-mode properties and design issues of three vertical-cavity surface-emitting laser (VCSEL) structures incorporating nano structures are rigorously investigated. Nano structuring enables to deliver selective pumping or loss to the fundamental mode as well as stabilizing the output...... polarization state. Comparison of three vectorial simulation methods reveals that the modal expansion method is suitable for treating the nano structured VCSEL designs....

Optimization of VCSELs for Self-Mixing Sensing

DEFF Research Database (Denmark)

Larsson, David; Yvind, Kresten; Chung, Il-Sug

2010-01-01

We have simulated the variations in optical output power from a vertical-cavity surface-emitting laser (VCSEL) subject to self-mixing feedback, which is very important for applications in sensing. In order to maximize the self-mixing signal for a given feedback we have optimized the epitaxial...

Complex-enhanced chaotic signals with time-delay signature suppression based on vertical-cavity surface-emitting lasers subject to chaotic optical injection

Science.gov (United States)

Chen, Jianjun; Duan, Yingni; Zhong, Zhuqiang

2018-03-01

A chaotic system is constructed on the basis of vertical-cavity surface-emitting lasers (VCSELs), where a slave VCSEL subject to chaotic optical injection (COI) from a master VCSEL with the external feedback. The complex degree (CD) and time-delay signature (TDS) of chaotic signals generated by this chaotic system are investigated numerically via permutation entropy (PE) and self-correlation function (SF) methods, respectively. The results show that, compared with master VCSEL subject to optical feedback, complex-enhanced chaotic signals with TDS suppression can be achieved for S-VCSEL subject to COI. Meanwhile, the influences of several controllable parameters on the evolution maps of CD of chaotic signals are carefully considered. It is shown that the CD of chaotic signals for S-VCSEL is always higher than that for M-VCSEL due to the CIO effect. The TDS of chaotic signals can be significantly suppressed by choosing the reasonable parameters in this system. Furthermore, TDS suppression and high CD chaos can be obtained simultaneously in the specific parameter ranges. The results confirm that this chaotic system may effectively improve the security of a chaos-based communication scheme.

A GaInAsP/InP Vertical Cavity Surface Emitting Laser for 1.5 m m operation

Science.gov (United States)

Sceats, R.; Balkan, N.; Adams, M. J.; Masum, J.; Dann, A. J.; Perrin, S. D.; Reid, I.; Reed, J.; Cannard, P.; Fisher, M. A.; Elton, D. J.; Harlow, M. J.

1999-04-01

We present the results of our studies concerning the pulsed operation of a bulk GaInAsP/InP vertical cavity surface emitting laser (VCSEL). The device is tailored to emit at around 1.5 m m at room temperature. The structure has a 45 period n-doped GaInAsP/InP bottom distributed Bragg reflector (DBR), and a 4 period Si/Al2O3 dielectric top reflector defining a 3-l cavity. Electroluminescence from a 16 m m diameter top window was measured in the pulsed injection mode. Spectral measurements were recorded in the temperature range between 125K and 240K. Polarisation, lasing threshold current and linewidth measurements were also carried out at the same temperatures. The threshold current density has a broad minimum at temperatures between 170K and 190K, (Jth=13.2 kA/cm2), indicating a good match between the gain and the cavity resonance in this temperature range. Maximum emitted power from the VCSEL is 0.18 mW at 180K.

Upstream vertical cavity surface-emitting lasers for fault monitoring and localization in WDM passive optical networks

Science.gov (United States)

Wong, Elaine; Zhao, Xiaoxue; Chang-Hasnain, Connie J.

2008-04-01

As wavelength division multiplexed passive optical networks (WDM-PONs) are expected to be first deployed to transport high capacity services to business customers, real-time knowledge of fiber/device faults and the location of such faults will be a necessity to guarantee reliability. Nonetheless, the added benefit of implementing fault monitoring capability should only incur minimal cost associated with upgrades to the network. In this work, we propose and experimentally demonstrate a fault monitoring and localization scheme based on a highly-sensitive and potentially low-cost monitor in conjunction with vertical cavity surface-emitting lasers (VCSELs). The VCSELs are used as upstream transmitters in the WDM-PON. The proposed scheme benefits from the high reflectivity of the top distributed Bragg reflector (DBR) mirror of optical injection-locked (OIL) VCSELs to reflect monitoring channels back to the central office for monitoring. Characterization of the fault monitor demonstrates high sensitivity, low bandwidth requirements, and potentially low output power. The added advantage of the proposed fault monitoring scheme incurs only a 0.5 dB penalty on the upstream transmissions on the existing infrastructure.

Design and Fabrication of 850 and 980 nm Vertical Cavity Surface Emitting Laser

National Research Council Canada - National Science Library

Das, N

2004-01-01

.... VCSELs on GaAs substrates were grown by the molecular beam epitaxy technique. In this report we present detailed procedures to design and fabricate 850-nm top-emitting and 980-nm bottom-emitting VCSELs...

Impact of optical feedback on current-induced polarization behavior of 1550 nm vertical-cavity surface-emitting lasers.

Science.gov (United States)

Deng, Tao; Wu, Zheng-Mao; Xie, Yi-Yuan; Wu, Jia-Gui; Tang, Xi; Fan, Li; Panajotov, Krassimir; Xia, Guang-Qiong

2013-06-01

Polarization switching (PS) between two orthogonal linearly polarized fundamental modes is experimentally observed in commercial free-running 1550 nm vertical-cavity surface-emitting lasers (VCSELs) (Raycan). The characteristics of this PS are strongly modified after introducing a polarization-preserved (PP) or polarization-orthogonal (PO) optical feedback. Under the case that the external cavity is approximately 30 cm, the PP optical feedback results in the PS point shifting toward a lower injection current, and the region within which the two polarization modes coexist is enlarged with the increase of the PP feedback strength. Under too-strong PP feedback levels, the PS disappears. The impact of PO optical feedback on VCSEL polarization behavior is quite similar to that of PP optical feedback, but larger feedback strength is needed to obtain similar results.

Modal loss mechanism of micro-structured VCSELs studied using full vector FDTD method.

Science.gov (United States)

Jo, Du-Ho; Vu, Ngoc Hai; Kim, Jin-Tae; Hwang, In-Kag

2011-09-12

Modal properties of vertical cavity surface-emitting lasers (VCSELs) with holey structures are studied using a finite difference time domain (FDTD) method. We investigate loss behavior with respect to the variation of structural parameters, and explain the loss mechanism of VCSELs. We also propose an effective method to estimate the modal loss based on mode profiles obtained using FDTD simulation. Our results could provide an important guideline for optimization of the microstructures of high-power single-mode VCSELs.

VCSELs based on arrays of sub-monolayer InGaAs quantum dots

International Nuclear Information System (INIS)

Blokhin, S. A.; Maleev, N. A.; Kuz'menkov, A. G.; Shernyakov, Yu. M.; Novikov, I. I.; Gordeev, N. Yu.; Dyudelev, V. V.; Sokolovskii, G. S.; Kuchinskii, V. I.; Kulagina, M. M.; Maximov, M. V.; Ustinov, V. M.; Kovsh, A. R.; Mikhrin, S. S.; Ledentsov, N. N.

2006-01-01

Vertical-cavity surface-emitting lasers (VCSELs) with an active region based on sub-monolayer InGaAs quantum dots and doped AlGaAs/GaAs distributed Bragg reflectors were grown by MBE. VCSELs with current aperture of 3 μm in diameter demonstrate single-mode lasing in 980-nm range with the threshold current of 0.6 mA, maximum output power up to 4 mW, and external differential efficiency of 68%. Multimode VCSELs with a (10-12)-μm aperture demonstrate ultralow internal optical loss of 0.09% per pass, which compares favorably with the best results obtained in similar lasers with undoped distributed Bragg reflectors

Nonlinear dynamic behaviors of an optically injected vertical-cavity surface-emitting laser

International Nuclear Information System (INIS)

Li Xiaofeng; Pan Wei; Luo Bin; Ma Dong; Wang Yong; Li Nuohan

2006-01-01

Nonlinear dynamics of a vertical-cavity surface-emitting laser (VCSEL) with external optical injection are studied numerically. We consider a master-slave configuration where the dynamic characteristics of the slave are affected by the optical injection from the master, and we also establish the corresponding Simulink model. The period-doubling route as well as the period-halving route is observed, where the regular, double-periodic, and chaotic pulsings are found. By adjusting the injection strength properly, the laser can be controlled to work at a given state. The effects of frequency detuning on the nonlinear behaviors are also investigated in terms of the bifurcation diagrams of photon density with the frequency detuning. For weak injection case, the nonlinear dynamics shown by the laser are quite different when the value of frequency detuning varies contrarily (positive and negative direction). If the optical injection is strong enough, the slave can be locked by the master even though the frequency detuning is relatively large

Optical Injection Locking of Vertical Cavity Surface-Emitting Lasers: Digital and Analog Applications

Science.gov (United States)

Parekh, Devang

With the rise of mobile (cellphones, tablets, notebooks, etc.) and broadband wireline communications (Fiber to the Home), there are increasing demands being placed on transmitters for moving data from device to device and around the world. Digital and analog fiber-optic communications have been the key technology to meet this challenge, ushering in ubiquitous Internet and cable TV over the past 20 years. At the physical layer, high-volume low-cost manufacturing of semiconductor optoelectronic devices has played an integral role in allowing for deployment of high-speed communication links. In particular, vertical cavity surface emitting lasers (VCSEL) have revolutionized short reach communications and are poised to enter more markets due to their low cost, small size, and performance. However, VCSELs have disadvantages such as limited modulation performance and large frequency chirp which limits fiber transmission speed and distance, key parameters for many fiber-optic communication systems. Optical injection locking is one method to overcome these limitations without re-engineering the VCSEL at the device level. By locking the frequency and phase of the VCSEL by the direct injection of light from another laser oscillator, improved device performance is achieved in a post-fabrication method. In this dissertation, optical injection locking of VCSELs is investigated from an applications perspective. Optical injection locking of VCSELs can be used as a pathway to reduce complexity, cost, and size of both digital and analog fiber-optic communications. On the digital front, reduction of frequency chirp via bit pattern inversion for large-signal modulation is experimentally demonstrated showing up to 10 times reduction in frequency chirp and over 90 times increase in fiber transmission distance. Based on these results, a new reflection-based interferometric model for optical injection locking was established to explain this phenomenon. On the analog side, the resonance

Commercialized VCSEL components fabricated at TrueLight Corporation

Science.gov (United States)

Pan, Jin-Shan; Lin, Yung-Sen; Li, Chao-Fang A.; Chang, C. H.; Wu, Jack; Lee, Bor-Lin; Chuang, Y. H.; Tu, S. L.; Wu, Calvin; Huang, Kai-Feng

2001-05-01

TrueLight Corporation was found in 1997 and it is the pioneer of VCSEL components supplier in Taiwan. We specialize in the production and distribution of VCSEL (Vertical Cavity Surface Emitting Laser) and other high-speed PIN-detector devices and components. Our core technology is developed to meet blooming demand of fiber optic transmission. Our intention is to diverse the device application into data communication, telecommunication and industrial markets. One mission is to provide the high performance, highly reliable and low-cost VCSEL components for data communication and sensing applications. For the past three years, TrueLight Corporation has entered successfully into the Gigabit Ethernet and the Fiber Channel data communication area. In this paper, we will focus on the fabrication of VCSEL components. We will present you the evolution of implanted and oxide-confined VCSEL process, device characterization, also performance in Gigabit data communication and the most important reliability issue

1060-nm Tunable Monolithic High Index Contrast Subwavelength Grating VCSEL

DEFF Research Database (Denmark)

Ansbæk, Thor; Chung, Il-Sug; Semenova, Elizaveta

2013-01-01

We present the first tunable vertical-cavity surface-emitting laser (VCSEL) where the top distributed Bragg reflector has been completely substituted by an air-cladded high-index-contrast subwavelength grating (HCG) mirror. In this way, an extended cavity design can be realized by reducing...

Real-time multi-target ranging based on chaotic polarization laser radars in the drive-response VCSELs.

Science.gov (United States)

Zhong, Dongzhou; Xu, Geliang; Luo, Wei; Xiao, Zhenzhen

2017-09-04

According to the principle of complete chaos synchronization and the theory of Hilbert phase transformation, we propose a novel real-time multi-target ranging scheme by using chaotic polarization laser radar in the drive-response vertical-cavity surface-emitting lasers (VCSELs). In the scheme, to ensure each polarization component (PC) of the master VCSEL (MVCSEL) to be synchronized steadily with that of the slave VCSEL, the output x-PC and y-PC from the MVCSEL in the drive system and those in the response system are modulated by the linear electro-optic effect simultaneously. Under this condition, by simulating the influences of some key parameters of the system on the synchronization quality and the relative errors of the two-target ranging, related operating parameters can be optimized. The x-PC and the y-PC, as two chaotic radar sources, are used to implement the real-time ranging for two targets. It is found that the measured distances of the two targets at arbitrary position exhibit strong real-time stability and only slight jitter. Their resolutions are up to millimeters, and their relative errors are very small and less than 2.7%.

Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance

International Nuclear Information System (INIS)

Chai, G. M. T.; Hosea, T. J. C.; Fox, N. E.; Hild, K.; Ikyo, A. B.; Marko, I. P.; Sweeney, S. J.; Bachmann, A.; Arafin, S.; Amann, M.-C.

2014-01-01

We report angle dependent and temperature dependent (9 K–300 K) photo-modulated reflectance (PR) studies on vertical-cavity surface-emitting laser (VCSEL) structures, designed for 2.3 μm mid-infrared gas sensing applications. Changing the temperature allows us to tune the energies of the quantum well (QW) transitions relative to the VCSEL cavity mode (CM) energy. These studies show that this VCSEL structure has a QW-CM offset of 21 meV at room temperature. Consequently the QW ground-state transition comes into resonance with the CM at 220 ± 2 K. The results from these PR studies are closely compared with those obtained in a separate study of actual operating devices and show how the PR technique may be useful for device optimisation without the necessity of having first to process the wafers into working devices

Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance

Energy Technology Data Exchange (ETDEWEB)

Chai, G. M. T. [Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia); Hosea, T. J. C., E-mail: j.hosea@surrey.ac.uk [Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia); Advanced Technology Institute and Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Fox, N. E.; Hild, K.; Ikyo, A. B.; Marko, I. P.; Sweeney, S. J. [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Bachmann, A.; Arafin, S.; Amann, M.-C. [Walter Schottky Institut, Technische Universität Munchen, Am Coulombwall 4, D-85748 Garching (Germany)

2014-01-07

We report angle dependent and temperature dependent (9 K–300 K) photo-modulated reflectance (PR) studies on vertical-cavity surface-emitting laser (VCSEL) structures, designed for 2.3 μm mid-infrared gas sensing applications. Changing the temperature allows us to tune the energies of the quantum well (QW) transitions relative to the VCSEL cavity mode (CM) energy. These studies show that this VCSEL structure has a QW-CM offset of 21 meV at room temperature. Consequently the QW ground-state transition comes into resonance with the CM at 220 ± 2 K. The results from these PR studies are closely compared with those obtained in a separate study of actual operating devices and show how the PR technique may be useful for device optimisation without the necessity of having first to process the wafers into working devices.

Compact electro-absorption modulator integrated with vertical-cavity surface-emitting laser for highly efficient millimeter-wave modulation

International Nuclear Information System (INIS)

Dalir, Hamed; Ahmed, Moustafa; Bakry, Ahmed; Koyama, Fumio

2014-01-01

We demonstrate a compact electro-absorption slow-light modulator laterally-integrated with an 850 nm vertical-cavity surface-emitting laser (VCSEL), which enables highly efficient millimeter-wave modulation. We found a strong leaky travelling wave in the lateral direction between the two cavities via widening the waveguide width with a taper shape. The small signal response of the fabricated device shows a large enhancement of over 55 dB in the modulation amplitude at frequencies beyond 35 GHz; thanks to the photon-photon resonance. A large group index of over 150 in a Bragg reflector waveguide enables the resonance at millimeter wave frequencies for 25 μm long compact modulator. Based on the modeling, we expect a resonant modulation at a higher frequency of 70 GHz. The resonant modulation in a compact slow-light modulator plays a significant key role for high efficient narrow-band modulation in the millimeter wave range far beyond the intrinsic modulation bandwidth of VCSELs.

Room temperature continuous wave mid-infrared VCSEL operating at 3.35 μm

Science.gov (United States)

Jayaraman, V.; Segal, S.; Lascola, K.; Burgner, C.; Towner, F.; Cazabat, A.; Cole, G. D.; Follman, D.; Heu, P.; Deutsch, C.

2018-02-01

Tunable vertical cavity surface emitting lasers (VCSELs) offer a potentially low cost tunable optical source in the 3-5 μm range that will enable commercial spectroscopic sensing of numerous environmentally and industrially important gases including methane, ethane, nitrous oxide, and carbon monoxide. Thus far, achieving room temperature continuous wave (RTCW) VCSEL operation at wavelengths beyond 3 μm has remained an elusive goal. In this paper, we introduce a new device structure that has enabled RTCW VCSEL operation near the methane absorption lines at 3.35 μm. This device structure employs two GaAs/AlGaAs mirrors wafer-bonded to an optically pumped active region comprising compressively strained type-I InGaAsSb quantum wells grown on a GaSb substrate. This substrate is removed in processing, as is one of the GaAs mirror substrates. The VCSEL structure is optically pumped at room temperature with a CW 1550 nm laser through the GaAs substrate, while the emitted 3.3 μm light is captured out of the top of the device. Power and spectrum shape measured as a function of pump power exhibit clear threshold behavior and robust singlemode spectra.

Reach Extension and Capacity Enhancement of VCSEL-Based Transmission Over Single-Lane MMF Links

DEFF Research Database (Denmark)

Tatarczak, Anna; Motaghiannezam, S. M. Reza; Kocot, Chris

2017-01-01

This paper reviews and examines several techniques for expanding the carrying capacity of multimode fiber (MMF) using vertical cavity surface emitting lasers (VCSELs). The first approach utilizes short wavelength division multiplexing in combination with MMF optimized for operation between 850 an...

Demonstration of Raman-based, dispersion-managed VCSEL technology for fibre-to-the-hut application

Science.gov (United States)

Rotich Kipnoo, E. K.; Kiboi Boiyo, D.; Isoe, G. M.; Chabata, T. V.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

2017-03-01

For the first time, we experimentally investigate the use of vertical cavity surface emitting lasers (VCSELs) in the fibre-to-the-home (FTTH) flavour for Africa, known as fibre-to-the-hut. Fibre-to-the-hut is a VCSEL based passive optical network technology designed and optimized for African continent. VCSELs have attracted attention in optical communication due to its vast advantages; low power consumption, relatively cheap costs among others. A 4.25 Gb/s uncooled VCSEL is used in a dispersion managed, Raman assisted network achieving beyond 100 km of error free transmission suited for FTTHut scenario. Energy-efficient high performance VCSEL is modulated using a 27-1 PRBS pattern and the signal transmitted on a G.655 fibre utilizing the minimum attenuation window.

Swept-source optical coherence tomography powered by a 1.3-μm vertical cavity surface emitting laser enables 2.3-mm-deep brain imaging in mice in vivo

Science.gov (United States)

Choi, Woo June; Wang, Ruikang K.

2015-10-01

We report noninvasive, in vivo optical imaging deep within a mouse brain by swept-source optical coherence tomography (SS-OCT), enabled by a 1.3-μm vertical cavity surface emitting laser (VCSEL). VCSEL SS-OCT offers a constant signal sensitivity of 105 dB throughout an entire depth of 4.25 mm in air, ensuring an extended usable imaging depth range of more than 2 mm in turbid biological tissue. Using this approach, we show deep brain imaging in mice with an open-skull cranial window preparation, revealing intact mouse brain anatomy from the superficial cerebral cortex to the deep hippocampus. VCSEL SS-OCT would be applicable to small animal studies for the investigation of deep tissue compartments in living brains where diseases such as dementia and tumor can take their toll.

Direct high-frequency modulation of VCSELs and applications in fibre optic RF and microwave links

International Nuclear Information System (INIS)

Larsson, Anders; Carlsson, Christina; Gustavsson, Johan; Haglund, Asa; Modh, Peter; Bengtsson, Joergen

2004-01-01

With the rapid development of wireless communication networks there is an increasing demand for efficient and cost-effective transmission and distribution of RF signals. Fibre optic RF links, employing directly modulated semiconductor lasers, provide many of the desired characteristics for such distribution systems and in the search for cost-effective solutions, the vertical cavity surface emitting laser (VCSEL) is of interest. It has therefore been the purpose of this work to investigate whether 850 nm VCSELs fulfil basic performance requirements for fibre optic RF links operating in the low-GHz range. The performance of single- and multimode oxide confined VCSELs has been compared, in order to pin-point limitations and to find the optimum design. Fibre optic RF links using VCSELs and multimode fibres have been assembled and evaluated with respect to performance characteristics of importance for wireless communication systems. We have found that optimized single-mode VCSELs provide the highest performance and that links using such VCSELs and high-bandwidth multimode fibres satisfy the requirements in a number of applications, including cellular systems for mobile communication and wireless local area networks

The simulation of thermal characteristics of 980 nm vertical cavity surface emitting lasers

Science.gov (United States)

Fang, Tianxiao; Cui, Bifeng; Hao, Shuai; Wang, Yang

2018-02-01

In order to design a single mode 980 nm vertical cavity surface emitting laser (VCSEL), a 2 μm output aperture is designed to guarantee the single mode output. The effects of different mesa sizes on the lattice temperature, the output power and the voltage are simulated under the condition of continuous working at room temperature, to obtain the optimum process parameters of mesa. It is obtained by results of the crosslight simulation software that the sizes of mesa radius are between 9.5 to 12.5 μm, which cannot only obtain the maximum output power, but also improve the heat dissipation of the device. Project supported by the Beijing Municipal Eduaction Commission (No. PXM2016_014204_500018) and the Construction of Scientific and Technological Innovation Service Ability in 2017 (No. PXM2017_014204_500034).

Compliant heterogeneous assemblies of micro-VCSELs as a new materials platform for integrated optoelectronics

Science.gov (United States)

Kang, Dongseok; Lee, Sung-Min; Kwong, Anthony; Yoon, Jongseung

2015-03-01

Despite many unique advantages, vertical cavity surface emitting lasers (VCSELs) have been available mostly on rigid, planar wafers over restricted areas, thereby limiting their usage for applications that can benefit from large-scale, programmable assemblies, hybrid integration with dissimilar materials and devices, or mechanically flexible constructions. Here, materials design and fabrication strategies that address these limitations of conventional VCSELs are presented. Specialized design of epitaxial materials and etching processes, together with printing-based deterministic assemblies and substrate thermal engineering, enabled defect-free release of microscale VCSELs and their device- and circuit-level implementation on non-native, flexible substrates with performance comparable to devices on the growth substrate.

An efficient approach to characterizing and calculating carrier loss due to heating and barrier height variation in vertical-cavity surface-emitting lasers

International Nuclear Information System (INIS)

Jian, Wu; Summers, H. D.

2010-01-01

It is important to determine quantitatively the internal carrier loss arising from heating and barrier height variation in a vertical-cavity surface-emitting quantum well laser (VCSEL). However, it is generally difficult to realize this goal using purely theoretical formulas due to difficulty in deriving the parameters relating to the quantum well structure. In this paper, we describe an efficient approach to characterizing and calculating the carrier loss due to the heating and the barrier height change in the VCSEL. In the method, the thermal carrier loss mechanism is combined with gain measurement and calculation. The carrier loss is re-characterized in a calculable form by constructing the threshold current and gain detuning-related loss current using the measured gain data and then substituting them for the quantum well-related parameters in the formula. The result can be expressed as a product of an exponential weight factor linked to the barrier height change and the difference between the threshold current and gain detuning-related loss current. The gain variation at cavity frequency due to thermal carrier loss and gain detuning processes is measured by using an AlInGaAs–AlGaAs VCSEL structure. This work provides a useful approach to analysing threshold and loss properties of the VCSEL, particularly, gain offset design for high temperature operation of VCSELs. (classical areas of phenomenology)

High-efficiency VCSEL arrays for illumination and sensing in consumer applications

Science.gov (United States)

Seurin, Jean-Francois; Zhou, Delai; Xu, Guoyang; Miglo, Alexander; Li, Daizong; Chen, Tong; Guo, Baiming; Ghosh, Chuni

2016-03-01

There has been increased interest in vertical-cavity surface-emitting lasers (VCSELs) for illumination and sensing in the consumer market, especially for 3D sensing ("gesture recognition") and 3D image capture. For these applications, the typical wavelength range of interest is 830~950nm and power levels vary from a few milli-Watts to several Watts. The devices are operated in short pulse mode (a few nano-seconds) with fast rise and fall times for time-of-flight applications (ToF), or in CW/quasi-CW for structured light applications. In VCSELs, the narrow spectrum and its low temperature dependence allows the use of narrower filters and therefore better signal-to-noise performance, especially for outdoor applications. In portable devices (mobile devices, wearable devices, laptops etc.) the size of the illumination module (VCSEL and optics) is a primary consideration. VCSELs offer a unique benefit compared to other laser sources in that they are "surface-mountable" and can be easily integrated along with other electronics components on a printed circuit board (PCB). A critical concern is the power-conversion efficiency (PCE) of the illumination source operating at high temperatures (>50 deg C). We report on various VCSEL based devices and diffuser-integrated modules with high efficiency at high temperatures. Over 40% PCE was achieved in broad temperature range of 0-70 °C for either low power single devices or high power VCSEL arrays, with sub- nano-second rise and fall time. These high power VCSEL arrays show excellent reliability, with extracted mean-time-to-failure (MTTF) of over 500 years at 60 °C ambient temperature and 8W peak output.

Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy

Science.gov (United States)

Wistey, Mark Allan

Fiber optics has revolutionized long distance communication and long haul networks, allowing unimaginable data speeds and noise-free telephone calls around the world for mere pennies per hour at the trunk level. But the high speeds of optical fiber generally do not extend to individual workstations or to the home, in large part because it has been difficult and expensive to produce lasers which emitted light at wavelengths which could take advantage of optical fiber. One of the most promising solutions to this problem is the development of a new class of semiconductors known as dilute nitrides. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows well-established processing techniques. More important, gallium arsenide allows the growth of vertical-cavity surface-emitting lasers (VCSELs), which can be grown in dense, 2D arrays on each wafer, providing tremendous economies of scale for manufacturing, testing, and packaging. Unfortunately, GaInNAs lasers have suffered from what has been dubbed the "nitrogen penalty," with high thresholds and low efficiency as the fraction of nitrogen in the semiconductor was increased. This thesis describes the steps taken to identify and essentially eliminate the nitrogen penalty. Protecting the wafer surface from plasma ignition, using an arsenic cap, greatly improved material quality. Using a Langmuir probe, we further found that the nitrogen plasma source produced a large number of ions which damaged the wafer during growth. The ions were dramatically reduced using deflection plates. Low voltage deflection plates were found to be preferable to high voltages, and simulations showed low voltages to be adequate for ion removal. The long wavelengths from dilute nitrides can be partly explained by wafer damage during growth. As a result of these studies, we demonstrated the first CW, room temperature lasers at wavelengths beyond 1.5mum on gallium arsenide, and the first GaInNAs(Sb) VCSELs beyond 1

Integration of electro-absorption modulator in a vertical-cavity surface-emitting laser

Science.gov (United States)

Marigo-Lombart, L.; Calvez, S.; Arnoult, A.; Rumeau, A.; Viallon, C.; Thienpont, H.; Panajotov, K.; Almuneau, G.

2018-02-01

VCSELs became dominant laser sources in many short optical link applications such as datacenter, active cables, etc. Actual standards and commercialized VCSEL are providing 25 Gb/s data rates, but new solutions are expected to settle the next device generation enabling 100 Gb/s. Directly modulated VCSEL have been extensively studied and improved to reach bandwidths in the range of 26-32 GHz [Chalmers, TU Berlin], however at the price of increased applied current and thus reduced device lifetime. Furthermore, the relaxation oscillation limit still subsists with this solution. Thus, splitting the emission and the modulation functions as done with DFB lasers is a very promising alternative [TI-Tech, TU Berlin]. Here, we study the vertical integration of an ElectroAbsorption Modulator (EAM) within a VCSEL, where the output light of the VCSEL is modulated through the EAM section. In our original design, we finely optimized the EAM design to maximize the modulation depth by implementing perturbative Quantum Confined Stark Effect (QCSE) calculations, while designing the vertical integration of the EAM without penalty on the VCSEL static performances. We will present the different fabricated vertical structures, as well as the experimental electrical and optical static measurements for those configurations demonstrating a very good agreement with the reflectivity and absorption simulations obtained for both the VCSEL and the EAM-VCSEL structures. Finally, to reach very high frequency modulation we studied the BCB electrical properties up to 110 GHz and investigated coplanar and microstrip lines access to decrease both the parasitic capacitance and the influence of the substrate.

Transverse mode selection in vertical-cavity surface-emitting lasers via deep impurity-induced disordering

Science.gov (United States)

O'Brien, Thomas R.; Kesler, Benjamin; Dallesasse, John M.

2017-02-01

Top emission 850-nm vertical-cavity surface-emitting lasers (VCSELs) demonstrating transverse mode selection via impurity-induced disordering (IID) are presented. The IID apertures are fabricated via closed ampoule zinc diffusion. A simple 1-D plane wave model based on the intermixing of Group III atoms during IID is presented to optimize the mirror loss of higher-order modes as a function of IID strength and depth. In addition, the impact of impurity diffusion into the cap layer of the lasers is shown to improve contact resistance. Further investigation of the mode-dependent characteristics of the device imply an increase in the thermal impedance associated with the fraction of IID contained within the oxide aperture. The optimization of the ratio of the IID aperture to oxide aperture is experimentally determined. Single fundamental mode output of 1.6 mW with 30 dBm side mode suppression ratio is achieved by a 3.0 μm oxide-confined device with an IID aperture of 1.3 μm indicating an optimal IID aperture size of 43% of the oxide aperture.

Direct visualization of the in-plane leakage of high-order transverse modes in vertical-cavity surface-emitting lasers mediated by oxide-aperture engineering

Science.gov (United States)

Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Burger, S.; Schmidt, F.; Ledentsov, N. N.

2016-03-01

Oxide-confined apertures in vertical cavity surface emitting laser (VCSEL) can be engineered such that they promote leakage of the transverse optical modes from the non- oxidized core region to the selectively oxidized periphery of the device. The reason of the leakage is that the VCSEL modes in the core can be coupled to tilted modes in the periphery if the orthogonality between the core mode and the modes at the periphery is broken by the oxidation-induced optical field redistribution. Three-dimensional modeling of a practical VCSEL design reveals i) significantly stronger leakage losses for high-order transverse modes than that of the fundamental one as high-order modes have a higher field intensity close to the oxide layers and ii) narrow peaks in the far-field profile generated by the leaky component of the optical modes. Experimental 850-nm GaAlAs leaky VCSELs produced in the modeled design demonstrate i) single-mode lasing with the aperture diameters up to 5μm with side mode suppression ratio >20dB at the current density of 10kA/cm2; and ii) narrow peaks tilted at 37 degrees with respect to the vertical axis in excellent agreement with the modeling data and confirming the leaky nature of the modes and the proposed mechanism of mode selection. The results indicate that in- plane coupling of VCSELs, VCSELs and p-i-n photodiodes, VCSEL and delay lines is possible allowing novel photonic integrated circuits. We show that the approach enables design of oxide apertures, air-gap apertures, devices created by impurity-induced intermixing or any combinations of such designs through quantitative evaluation of the leaky emission.

Free-Space Optical Interconnect Employing VCSEL Diodes

Science.gov (United States)

Simons, Rainee N.; Savich, Gregory R.; Torres, Heidi

2009-01-01

Sensor signal processing is widely used on aircraft and spacecraft. The scheme employs multiple input/output nodes for data acquisition and CPU (central processing unit) nodes for data processing. To connect 110 nodes and CPU nodes, scalable interconnections such as backplanes are desired because the number of nodes depends on requirements of each mission. An optical backplane consisting of vertical-cavity surface-emitting lasers (VCSELs), VCSEL drivers, photodetectors, and transimpedance amplifiers is the preferred approach since it can handle several hundred megabits per second data throughput.The next generation of satellite-borne systems will require transceivers and processors that can handle several Gb/s of data. Optical interconnects have been praised for both their speed and functionality with hopes that light can relieve the electrical bottleneck predicted for the near future. Optoelectronic interconnects provide a factor of ten improvement over electrical interconnects.

Compactly packaged monolithic four-wavelength VCSEL array with 100-GHz wavelength spacing for future-proof mobile fronthaul transport.

Science.gov (United States)

Lee, Eun-Gu; Mun, Sil-Gu; Lee, Sang Soo; Lee, Jyung Chan; Lee, Jong Hyun

2015-01-12

We report a cost-effective transmitter optical sub-assembly using a monolithic four-wavelength vertical-cavity surface-emitting laser (VCSEL) array with 100-GHz wavelength spacing for future-proof mobile fronthaul transport using the data rate of common public radio interface option 6. The wavelength spacing is achieved using selectively etched cavity control layers and fine current adjustment. The differences in operating current and output power for maintaining the wavelength spacing of four VCSELs are fiber without any dispersion-compensation techniques.

Semiconductor laser joint study program with Rome Laboratory

Science.gov (United States)

Schaff, William J.; Okeefe, Sean S.; Eastman, Lester F.

1994-09-01

A program to jointly study vertical-cavity surface emitting lasers (VCSEL) for high speed vertical optical interconnects (VOI) has been conducted under an ES&E between Rome Laboratory and Cornell University. Lasers were designed, grown, and fabricated at Cornell University. A VCSEL measurement laboratory has been designed, built, and utilized at Rome Laboratory. High quality VCSEL material was grown and characterized by fabricating conventional lateral cavity lasers that emitted at the design wavelength of 1.04 microns. The VCSEL's emit at 1.06 microns. Threshold currents of 16 mA at 4.8 volts were obtained for 30 microns diameter devices. Output powers of 5 mW were measured. This is 500 times higher power than from the light emitting diodes employed previously for vertical optical interconnects. A new form of compositional grading using a cosinusoidal function has been developed and is very successful for reducing diode series resistance for high speed interconnection applications. A flip-chip diamond package compatible with high speed operation of 16 VCSEL elements has been designed and characterized. A flip-chip device binding effort at Rome Laboratory was also designed and initiated. This report presents details of the one-year effort, including process recipes and results.

Surface emitting ring quantum cascade lasers for chemical sensing

Science.gov (United States)

Szedlak, Rolf; Hayden, Jakob; Martín-Mateos, Pedro; Holzbauer, Martin; Harrer, Andreas; Schwarz, Benedikt; Hinkov, Borislav; MacFarland, Donald; Zederbauer, Tobias; Detz, Hermann; Andrews, Aaron Maxwell; Schrenk, Werner; Acedo, Pablo; Lendl, Bernhard; Strasser, Gottfried

2018-01-01

We review recent advances in chemical sensing applications based on surface emitting ring quantum cascade lasers (QCLs). Such lasers can be implemented in monolithically integrated on-chip laser/detector devices forming compact gas sensors, which are based on direct absorption spectroscopy according to the Beer-Lambert law. Furthermore, we present experimental results on radio frequency modulation up to 150 MHz of surface emitting ring QCLs. This technique provides detailed insight into the modulation characteristics of such lasers. The gained knowledge facilitates the utilization of ring QCLs in combination with spectroscopic techniques, such as heterodyne phase-sensitive dispersion spectroscopy for gas detection and analysis.

Transverse-mode-selectable microlens vertical-cavity surface-emitting laser

DEFF Research Database (Denmark)

Chung, Il-Sug; Debernardi, Pierluigi; Lee, Yong Tak

2010-01-01

A new vertical-cavity surface-emitting laser structure employing a thin microlens is suggested and numerically investigated. The laser can be made to emit in either a high-power Gaussian-shaped single-fundamental mode or a high-power doughnut-shaped higher-order mode. The physical origin...

A 1550-nm all-optical VCSEL-to-VCSEL wavelength conversion of a 8.5-Gb/s data signal and transmission over a 24.7-km fibre

Science.gov (United States)

Boiyo, D. Kiboi; Isoe, G. M.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

2016-02-01

For the first time, we demonstrate, VCSEL-to-VCSEL wavelength conversion within the low attenuation 1550 nm window, including transmission over fibre and bit error rate (BER) performance characterization. We experimentally demonstrate a low injection power optical wavelength conversion by injecting an optical beam from a signal carrier master vertical cavity surface-emitting laser (VCSEL) into the side-mode of the slave VCSEL. This technique solves the challenge of wavelength collisions and also provides wavelength re-use in typical wavelength division multiplexed (WDM) systems. This paper, for the first time, uses two 1550 nm VCSELs with tunability range of 3 nm for a 5-9.8 mA bias current. The master VCSEL is modulated with a non-return-to-zero (NRZ) pseudo-random binary sequence (PRBS_27-1) 8.5 Gb/s data. A data conversion penalty of 1.1 dB is realized when a 15 dBm injection beam is used. The transmission performance of the converted wavelength from the slave VCSEL is evaluated using BER measurement at a 10-9 threshold. A 0.5 dB transmission penalty of the converted wavelength data is realized in an 8.5 Gb/s transmission over 24.7 km. This work is vital for optical fibre systems that may require wavelength switching for transmission of data signals.

Study of the Radiation-Hardness of VCSEL and PIN

CERN Document Server

Gan, K K; Fernando, W; Kagan, H P; Kass, R D; Lebbai, M R M; Merritt, H; Moore, J R; Nagarkar, A; Rizatdinova, F; Skubic, P L; Smith, D S; Strang, M

2009-01-01

The silicon trackers of the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Geneva) use optical links for data transmission. An upgrade of the trackers is planned for the Super LHC (SLHC), an upgraded LHC with ten times higher luminosity. We study the radiation-hardness of VCSELs (Vertical-Cavity Surface-Emitting Laser) and GaAs and silicon PINs using 24 GeV/c protons at CERN for possible application in the data transmission upgrade. The optical power of VCSEL arrays decreases significantly after the irradiation but can be partially annealed with high drive currents. The responsivities of the PIN diodes also decrease significantly after irradiation, but can be recovered by operating at higher bias voltage. This provides a simple mechanism to recover from the radiation damage.

Optical power of VCSELs stabilized to 35 ppm/°C without a TEC

Science.gov (United States)

Downing, John

2015-03-01

This paper reports a method and system comprising a light source, an electronic method, and a calibration procedure for stabilizing the optical power of vertical-cavity surface-emitting lasers (VCSELs) and laser diodes (LDs) without the use thermoelectric coolers (TECs). The system eliminates the needs for custom interference coatings, polarization adjustments, and the exact alignment required by the optical method reported in 2013 [1]. It can precisely compensate for the effects of temperature and wavelength drift on photodiode responsivity as well as changes in VCSEL beam quality and polarization angle over a 50°C temperature range. Data obtained from light sources built with single-mode polarization-locked VCSELs demonstrate that 30 ppm/°C stability can be readily obtained. The system has advantages over TECstabilized laser modules that include: 1) 90% lower relative RMS optical power and temperature sensitivity, 2) a five-fold enhancement of wall-plug efficiency, 3) less component testing and sorting, 4) lower manufacturing costs, and 5) automated calibration in batches at time of manufacture is practical. The system is ideally suited for battery-powered environmental and in-home medical monitoring applications.

Continuous wave vertical cavity surface emitting lasers at 2.5 μm with InP-based type-II quantum wells

International Nuclear Information System (INIS)

Sprengel, S.; Andrejew, A.; Federer, F.; Veerabathran, G. K.; Boehm, G.; Amann, M.-C.

2015-01-01

A concept for electrically pumped vertical cavity surface emitting lasers (VCSEL) for emission wavelength beyond 2 μm is presented. This concept integrates type-II quantum wells into InP-based VCSELs with a buried tunnel junction as current aperture. The W-shaped quantum wells are based on the type-II band alignment between GaInAs and GaAsSb. The structure includes an epitaxial GaInAs/InP and an amorphous AlF 3 /ZnS distributed Bragg reflector as bottom and top (outcoupling) mirror, respectively. Continuous-wave operation up to 10 °C at a wavelength of 2.49 μm and a peak output power of 400 μW at −18 °C has been achieved. Single-mode emission with a side-mode suppression ratio of 30 dB for mesa diameters up to 14 μm is presented. The long emission wavelength and current tunability over a wavelength range of more than 5 nm combined with its single-mode operation makes this device ideally suited for spectroscopy applications

Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

Energy Technology Data Exchange (ETDEWEB)

Leonard, J. T., E-mail: jtleona01@gmail.com; Yonkee, B. P.; Cohen, D. A.; Megalini, L.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Lee, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2016-01-18

We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to selectively remove the multi-quantum well (MQW) region outside the aperture area, defined by an opaque metal mask. This PEC aperture (PECA) creates an air-gap in the passive area of the device, allowing one to achieve efficient electrical confinement within the aperture, while simultaneously achieving a large index contrast between core of the device (the MQW within the aperture) and the lateral cladding of the device (the air-gap formed by the PEC etch), leading to strong lateral confinement. Scanning electron microscopy and focused ion-beam analysis is used to investigate the precision of the PEC etch technique in defining the aperture. The fabricated single mode PECA VCSEL shows a threshold current density of ∼22 kA/cm{sup 2} (25 mA), with a peak output power of ∼180 μW, at an emission wavelength of 417 nm. The near-field emission profile shows a clearly defined single linearly polarized (LP) mode profile (LP{sub 12,1}), which is in contrast to the filamentary lasing that is often observed in III-nitride VCSELs. 2D mode profile simulations, carried out using COMSOL, give insight into the different mode profiles that one would expect to be displayed in such a device. The experimentally observed single mode operation is proposed to be predominantly a result of poor current spreading in the device. This non-uniform current spreading results in a higher injected current at the periphery of the aperture, which favors LP modes with high intensities near the edge of the aperture.

Study on VCSEL laser heating chip in nuclear magnetic resonance gyroscope

Science.gov (United States)

Liang, Xiaoyang; Zhou, Binquan; Wu, Wenfeng; Jia, Yuchen; Wang, Jing

2017-10-01

In recent years, atomic gyroscope has become an important direction of inertial navigation. Nuclear magnetic resonance gyroscope has a stronger advantage in the miniaturization of the size. In atomic gyroscope, the lasers are indispensable devices which has an important effect on the improvement of the gyroscope performance. The frequency stability of the VCSEL lasers requires high precision control of temperature. However, the heating current of the laser will definitely bring in the magnetic field, and the sensitive device, alkali vapor cell, is very sensitive to the magnetic field, so that the metal pattern of the heating chip should be designed ingeniously to eliminate the magnetic field introduced by the heating current. In this paper, a heating chip was fabricated by MEMS process, i.e. depositing platinum on semiconductor substrates. Platinum has long been considered as a good resistance material used for measuring temperature The VCSEL laser chip is fixed in the center of the heating chip. The thermometer resistor measures the temperature of the heating chip, which can be considered as the same temperature of the VCSEL laser chip, by turning the temperature signal into voltage signal. The FPGA chip is used as a micro controller, and combined with PID control algorithm constitute a closed loop control circuit. The voltage applied to the heating resistor wire is modified to achieve the temperature control of the VCSEL laser. In this way, the laser frequency can be controlled stably and easily. Ultimately, the temperature stability can be achieved better than 100mK.

Enhancement of slope efficiency and output power in GaN-based vertical-cavity surface-emitting lasers with a SiO2-buried lateral index guide

Science.gov (United States)

Kuramoto, Masaru; Kobayashi, Seiichiro; Akagi, Takanobu; Tazawa, Komei; Tanaka, Kazufumi; Saito, Tatsuma; Takeuchi, Tetsuya

2018-03-01

We have achieved a high output power of 6 mW from a 441 nm GaN-based vertical-cavity surface-emitting laser (VCSEL) under continuous wave (CW) operation, by reducing both the internal loss and the reflectivity of the front cavity mirror. A preliminary analysis of the internal loss revealed an enormously high transverse radiation loss in a conventional GaN-based VCSEL without lateral optical confinement (LOC). Introducing an LOC structure enhanced the slope efficiency by a factor of 4.7, with a further improvement to a factor of 6.7 upon reducing the front mirror reflectivity. The result was a slope efficiency of 0.87 W/A and an external differential quantum efficiency of 32% under pulsed operation. A flip-chip-bonded VCSEL also exhibited a high slope efficiency of 0.64 W/A and an external differential quantum efficiency of 23% for the front-side output under CW operation. The reflectivity of the cavity mirror was adjusted by varying the number of AlInN/GaN distributed Bragg reflector pairs from 46 to 42, corresponding to reflectivity values from 99.8% to 99.5%. These results demonstrate that a combination of internal loss reduction and cavity mirror control is a very effective way of obtaining a high output GaN-based VCSEL.

Modeling and characterization of VCSEL-based avionics full-duplex ethernet (AFDX) gigabit links

Science.gov (United States)

Ly, Khadijetou S.; Rissons, A.; Gambardella, E.; Bajon, D.; Mollier, J.-C.

2008-02-01

Low cost and intrinsic performances of 850 nm Vertical Cavity Surface Emitting Lasers (VCSELs) compared to Light Emitting Diodes make them very attractive for high speed and short distances data communication links through optical fibers. Weight saving and Electromagnetic Interference withstanding requirements have led to the need of a reliable solution to improve existing avionics high speed buses (e.g. AFDX) up to 1Gbps over 100m. To predict and optimize the performance of the link, the physical behavior of the VCSEL must be well understood. First, a theoretical study is performed through the rate equations adapted to VCSEL in large signal modulation. Averaged turn-on delays and oscillation effects are analytically computed and analyzed for different values of the on- and off state currents. This will affect the eye pattern, timing jitter and Bit Error Rate (BER) of the signal that must remain within IEEE 802.3 standard limits. In particular, the off-state current is minimized below the threshold to allow the highest possible Extinction Ratio. At this level, the spontaneous emission is dominating and leads to significant turn-on delay, turn-on jitter and bit pattern effects. Also, the transverse multimode behavior of VCSELs, caused by Spatial Hole Burning leads to some dispersion in the fiber and degradation of BER. VCSEL to Multimode Fiber coupling model is provided for prediction and optimization of modal dispersion. Lastly, turn-on delay measurements are performed on a real mock-up and results are compared with calculations.

Growth of GaAs-based VCSEL/RCE Structures for Optoelectronic Applications via Molecular Beam Epitaxy

OpenAIRE

A. S. Somintac; E. Estacio,; M. F. Bailon; A. A. Salvador

2003-01-01

High intensity and sharp emission peaks, at light-hole (842 nm) and heavy-hole (857 nm) excitonic transitionsfor a 90 Å GaAs quantum well (QW) were observed for vertical-cavity surface-emitting laser (VCSEL)structure. Excellent wavelength selectivity and sensitivity were demonstrated by resonant cavity enhanced(RCE) photodetector at 859 nm, corresponding to the energy level of a 95 Å GaAs quantum well.

Optical Characterizations of VCSEL for Emission at 850 nm with Al Oxide Confinement Layers

Science.gov (United States)

Mokhtari, Merwan; Pagnod-Rossiaux, Philippe; Laruelle, Francois; Landesman, Jean-Pierre; Moreac, Alain; Levallois, Christophe; Cassidy, Daniel T.

2018-03-01

In-plane micro-photoluminescence (μ-PL) and micro-reflectivity measurements have been performed at room temperature by optical excitation perpendicular to the surface of two different structures: a complete vertical surface-emitting laser (VCSEL) structure and a VCSEL without the upper p-type distributed Bragg reflector (P-DBR). The two structures were both laterally oxidized and measurements were made on the top of oxidized and unoxidized regions. We show that, since the photoluminescence (PL) spectra consist of the cumulative effect of InGaAs/AlGaAs multi-quantum wells (MQWs) luminescence and interferences in the DBR, the presence or not of the P-DBR and oxide layers can significantly modify the spectrum. μ-PL mapping performed on full VCSEL structures clearly shows oxidized and unoxidized regions that are not resolved with visible light optical microscopy. Finally, preliminary measurements of the degree of polarization (DOP) of the PL have been made on a complete VCSEL structure before and after an oxidation process. We obtain an image of DOP measured by polarization-resolved μ-PL. These measurements allow us to evaluate the main components of strain.

Visible laser and superluminescent diode based free space and underwater communications

KAUST Repository

Ooi, Boon S.

2017-01-30

We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.

Visible laser and superluminescent diode based free space and underwater communications

KAUST Repository

Ooi, Boon S.

2017-01-01

We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.

Using a Single VCSEL Source Employing OFDM Downstream Signal and Remodulated OOK Upstream Signal for Bi-directional Visible Light Communications.

Science.gov (United States)

Yeh, Chien-Hung; Wei, Liang-Yu; Chow, Chi-Wai

2017-11-20

In this work, we propose and demonstrate for the first time up to our knowledge, using a 682 nm visible vertical-cavity surface-emitting laser (VCSEL) applied in a bi-directional wavelength remodulated VLC system with a free space transmission distance of 3 m. To achieve a high VLC downstream traffic, spectral efficient orthogonal-frequency-division-multiplexing quadrature-amplitude-modulation (OFDM-QAM) with bit and power loading algorithms are applied on the VCSEL in the central office (CO). The OFDM downstream wavelength is remodulated by an acousto-optic modulator (AOM) with OOK modulation to produce the upstream traffic in the client side. Hence, only a single VCSEL laser is needed for the proposed bi-directional VLC system, achieving 10.6 Gbit/s OFDM downstream and 2 Mbit/s remodulated OOK upstream simultaneously. For the proposed system, as a single laser source with wavelength remodulation is used, the laser wavelength and temperature managements at the client side are not needed; and the whole system could be cost effective and energy efficient.

850-nm Zn-diffusion vertical-cavity surface-emitting lasers with with oxide-relief structure for high-speed and energy-efficient optical interconnects from very-short to medium (2km) reaches

Science.gov (United States)

Shi, Jin-Wei; Wei, Chia-Chien; Chen, Jason (Jyehong); Yang, Ying-Jay

2015-03-01

High-speed and "green" ~850 nm vertical-cavity surface-emitting lasers (VCSELs) have lately attracted lots of attention due to their suitability for applications in optical interconnects (OIs). To further enhance the speed and its maximum allowable linking distance of VCSELs are two major trends to meet the requirement of OI in next generation data centers. Recently, by use of the advanced 850 nm VCSEL technique, data rate as high as 64 Gbit/sec over 57m and 20 Gbit/sec over 2km MMF transmission have been demonstrated, respectively. Here, we will review our recent work about 850 nm Zn-diffusion VCSELs with oxide-relief apertures to further enhance the above-mentioned performances. By using Zn-diffusion, we can not only reduce the device resistance but also manipulate the number of optical modes to benefit transmission. Combing such device, which has excellent single-mode (SMSR >30 dB) and high-power (~7mW) performance, with advanced modulation format (OFDM), record-high bit-rate-distance-product through MMF (2.3 km×28 Gbit/sec) has been demonstrated. Furthermore, by selective etching away the oxide aperture inside Zn-diffusion VCSEL, significant enhancement of device speed, D-factor, and reliability can be observed. With such unique VCSEL structure, >40 Gbit/sec energy-efficient transmission over 100m MMF under extremely low-driving current density (<10kA/cm2) has been successfully demonstrated.

Thermal wave interference with high-power VCSEL arrays for locating vertically oriented subsurface defects

Science.gov (United States)

Thiel, Erik; Kreutzbruck, Marc; Studemund, Taarna; Ziegler, Mathias

2018-04-01

Among the photothermal methods, full-field thermal imaging is used to characterize materials, to determine thicknesses of layers, or to find inhomogeneities such as voids or cracks. The use of classical light sources such as flash lamps (impulse heating) or halogen lamps (modulated heating) led to a variety of nondestructive testing methods, in particular, lock-in and flash-thermography. In vertical-cavity surface-emitting lasers (VCSELs), laser light is emitted perpendicularly to the surface with a symmetrical beam profile. Due to the vertical structure, they can be arranged in large arrays of many thousands of individual lasers, which allows power scaling into the kilowatt range. Recently, a high-power yet very compact version of such a VCSEL-array became available that offers both the fast timing behavior of a laser as well as the large illumination area of a lamp. Moreover, it allows a spatial and temporal control of the heating because individual parts of the array can be controlled arbitrarily in frequency, amplitude, and phase. In conjunction with a fast infrared camera, such structured heating opens up a field of novel thermal imaging and testing methods. As a first demonstration of this approach, we chose a testing problem very challenging to conventional thermal infrared testing: The detection of very thin subsurface defects perpendicularly oriented to the surface of metallic samples. First, we generate destructively interfering thermal wave fields, which are then affected by the presence of defects within their reach. It turned out that this technique allows highly sensitive detection of subsurface defects down to depths in excess of the usual thermographic rule of thumb, with no need for a reference or surface preparation.

Radiation hardness and lifetime studies of LEDs and VCSELs for the optical readout of the ATLAS SCT

CERN Document Server

Beringer, J; Mommsen, R K; Nickerson, R B; Weidberg, A R; Monnier, E; Hou, H Q; Lear, K L

1999-01-01

We study the radiation hardness and the lifetime of Light Emitting Diodes (LEDs) and Vertical Cavity Surface Emitting Laser diodes (VCSELs) in the context of the development of the optical readout for the ATLAS SemiConductor Tracker (SCT) at LHC. About 170 LEDs from two different manufacturers and about 130 VCSELs were irradiated with neutron and proton fluences equivalent to (and in some cases more than twice as high as) the combined neutral and charged particle fluence of about 5x10 sup 1 sup 4 n (1 MeV eq. in GaAs)/cm sup 2 expected in the ATLAS inner detector. We report on the radiation damage and the conditions required for its partial annealing under forward bias, we calculate radiation damage constants, and we present post-irradiation failure rates for LEDs and VCSELs. The lifetime after irradiation was investigated by operating the diodes at an elevated temperature of 50 degree sign C for several months, resulting in operating times corresponding to up to 70 years of operation in the ATLAS SCT. From o...

Self-aligned BCB planarization method for high-frequency signal injection in a VCSEL with an integrated modulator

Science.gov (United States)

Marigo-Lombart, Ludovic; Doucet, Jean-Baptiste; Lecestre, Aurélie; Reig, Benjamin; Rousset, Bernard; Thienpont, Hugo; Panajotov, Krassimir; Almuneau, Guilhem

2016-04-01

The huge increase of datacom capacities requires lasers sources with more and more bandwidth performances. Vertical-Cavity Surface-Emitting Lasers (VCSEL) in direct modulation is a good candidate, already widely used for short communication links such as in datacenters. Recently several different approaches have been proposed to further extend the direct modulation bandwidth of these devices, by improving the VCSEL structure, or by combining the VCSEL with another high speed element such as lateral slow light modulator or transistor/laser based structure (TVCSEL). We propose to increase the modulation bandwidth by vertically integrating a continuous-wave VCSEL with a high-speed electro-modulator. This vertical structure implies multiple electrodes with sufficiently good electrical separation between the different input electrical signals. This high frequency modulation requires both good electrical insulation between metal electrodes and an optimized design of the coplanar lines. BenzoCyclobutene (BCB) thanks to its low dielectric constant, low losses, low moisture absorption and good thermal stability, is often used as insulating layer. Also, BCB planarization offers the advantages of simpler and more reliable technological process flow in such integrated VCSEL/modulator structures with important reliefs. As described by Burdeaux et al. a degree of planarization (DOP) of about 95% can be achieved by simple spin coating whatever the device thickness. In most of the cases, the BCB planarization process requires an additional photolithography step in order to open an access to the mesa surface, thus involving a tight mask alignment and resulting in a degraded planarization. In this paper, we propose a self-aligned process with improved BCB planarization by combining a hot isostatic pressing derived from nanoimprint techniques with a dry plasma etching step.

New VCSEL technology with scalability for single mode operation and densely integrated arrays

Science.gov (United States)

Zhao, Guowei; Demir, Abdullah; Freisem, Sabine; Zhang, Yu; Liu, Xiaohang; Deppe, Dennis G.

2011-06-01

Data are presented demonstrating a new lithographic vertical-cavity surface-emitting laser (VCSEL) technology, which produces simultaneous mode- and current-confinement only by lithography and epitaxial crystal growth. The devices are grown by solid source molecular beam epitaxy, and have lithographically defined sizes that vary from 3 μm to 20 μm. The lithographic process allows the devices to have high uniformity throughout the wafer and scalability to very small size. The 3 μm device shows a threshold current of 310 μA, the slope efficiency of 0.81 W/A, and the maximum output power of more than 5 mW. The 3 μm device also shows single-mode single-polarization operation without the use of surface grating, and has over 25 dB side-mode-suppression-ratio up to 1 mW of output power. The devices have low thermal resistance due to the elimination of oxide aperture. High reliability is achieved by removal of internal strain caused by the oxide, stress test shows no degradation for the 3 μm device operating at very high injection current level of 142 kA/cm2 for 1000 hours, while at this dive level commercial VCSELs fail rapidly. The lithographic VCSEL technology can lead to manufacture of reliable small size laser diode, which will have application in large area 2-D arrays and low power sensors.

High-speed highly temperature stable 980 nm VCSELs operating at 25 Gb/s at up to 85 °C for short reach optical interconnects

Science.gov (United States)

Mutig, Alex; Lott, James A.; Blokhin, Sergey A.; Moser, Philip; Wolf, Philip; Hofmann, Werner; Nadtochiy, Alexey M.; Bimberg, Dieter

2011-03-01

The progressive penetration of optical communication links into traditional copper interconnect markets greatly expands the applications of vertical cavity surface emitting lasers (VCSELs) for the next-generation of board-to-board, moduleto- module, chip-to-chip, and on-chip optical interconnects. Stability of the VCSEL parameters at high temperatures is indispensable for such applications, since these lasers typically reside directly on or near integrated circuit chips. Here we present 980 nm oxide-confined VCSELs operating error-free at bit rates up to 25 Gbit/s at temperatures as high as 85 °C without adjustment of the drive current and peak-to-peak modulation voltage. The driver design is therefore simplified and the power consumption of the driver electronics is lowered, reducing the production and operational costs. Small and large signal modulation experiments at various temperatures from 20 up to 85 °C for lasers with different oxide aperture diameters are presented in order to analyze the physical processes controlling the performance of the VCSELs. Temperature insensitive maximum -3 dB bandwidths of around 13-15 GHz for VCSELs with aperture diameters of 10 μm and corresponding parasitic cut-off frequencies exceeding 22 GHz are observed. Presented results demonstrate the suitability of our VCSELs for practical high speed and high temperature stable short-reach optical links.

Theory and Modeling of Lasing Modes in Vertical Cavity Surface Emitting Lasers

Directory of Open Access Journals (Sweden)

Benjamin Klein

1998-01-01

modes that the VCSEL can support are then determined by matching the gain necessary for the optical system in both magnitude and phase to the gain available from the laser's electronic system. Examples are provided.

VCSEL Scaling, Laser Integration on Silicon, and Bit Energy

Science.gov (United States)

2017-03-01

especially the laser. Highly compact directly modulated lasers ( DMLs ) have been researched to meet this goal. The most favored technology will likely be...question of which achieves lower bit energy, a DML or a continuous-wave (CW) laser coupled to an integrated modulator. Transceiver suppliers are also...development that can utilize high efficiency DMLs that reach very high modulation speed. Oxide-VCSELs [1] do not yet take full advantage of the

Real time algorithm temperature compensation in tunable laser / VCSEL based WDM-PON system

DEFF Research Database (Denmark)

Iglesias Olmedo, Miguel; Rodes Lopez, Roberto; Pham, Tien Thang

2012-01-01

We report on a real time experimental validation of a centralized algorithm for temperature compensation of tunable laser/VCSEL at ONU and OLT, respectively. Locking to a chosen WDM channel is shown for temperature changes over 40°C.......We report on a real time experimental validation of a centralized algorithm for temperature compensation of tunable laser/VCSEL at ONU and OLT, respectively. Locking to a chosen WDM channel is shown for temperature changes over 40°C....

Comparison of single-/few-/multi-mode 850 nm VCSELs for optical OFDM transmission.

Science.gov (United States)

Kao, Hsuan-Yun; Tsai, Cheng-Ting; Leong, Shan-Fong; Peng, Chun-Yen; Chi, Yu-Chieh; Huang, Jian Jang; Kuo, Hao-Chung; Shih, Tien-Tsorng; Jou, Jau-Ji; Cheng, Wood-Hi; Wu, Chao-Hsin; Lin, Gong-Ru

2017-07-10

For high-speed optical OFDM transmission applications, a comprehensive comparison of the homemade multi-/few-/single-transverse mode (MM/FM/SM) vertical cavity surface emitting laser (VCSEL) chips is performed. With microwave probe, the direct encoding of pre-leveled 16-QAM OFDM data and transmission over 100-m-long OM4 multi-mode-fiber (MMF) are demonstrated for intra-datacenter applications. The MM VCSEL chip with the largest emission aperture of 11 μm reveals the highest differential quantum efficiency which provides the highest optical power of 8.67 mW but exhibits the lowest encodable bandwidth of 21 GHz. In contrast, the SM VCSEL chip fabricated with the smallest emission aperture of only 3 μm provides the highest 3-dB encoding bandwidth up to 23 GHz at a cost of slight heat accumulation. After optimization, with the trade-off set between the receiving signal-to-noise ratio (SNR) and bandwidth, the FM VCSEL chip guarantees the highest optical OFDM transmission bit rate of 96 Gbit/s under back-to-back case with its strongest throughput. Among three VCSEL chips, the SM VCSEL chip with nearly modal-dispersion free feature is treated as the best candidate for carrying the pre-leveled 16-QAM OFDM data over 100-m OM4-MMF with same material structure but exhibits different oxide-layer confined gain cross-sections with one another at 80-Gbit/s with the smallest receiving power penalty of 1.77 dB.

Ultra-wideband WDM VCSEL arrays by lateral heterogeneous integration

Science.gov (United States)

Geske, Jon

Advancements in heterogeneous integration are a driving factor in the development of evermore sophisticated and functional electronic and photonic devices. Such advancements will merge the optical and electronic capabilities of different material systems onto a common integrated device platform. This thesis presents a new lateral heterogeneous integration technology called nonplanar wafer bonding. The technique is capable of integrating multiple dissimilar semiconductor device structures on the surface of a substrate in a single wafer bond step, leaving different integrated device structures adjacent to each other on the wafer surface. Material characterization and numerical simulations confirm that the material quality is not compromised during the process. Nonplanar wafer bonding is used to fabricate ultra-wideband wavelength division multiplexed (WDM) vertical-cavity surface-emitting laser (VCSEL) arrays. The optically-pumped VCSEL arrays span 140 nm from 1470 to 1610 nm, a record wavelength span for devices operating in this wavelength range. The array uses eight wavelength channels to span the 140 nm with all channels separated by precisely 20 nm. All channels in the array operate single mode to at least 65°C with output power uniformity of +/- 1 dB. The ultra-wideband WDM VCSEL arrays are a significant first step toward the development of a single-chip source for optical networks based on coarse WDM (CWDM), a low-cost alternative to traditional dense WDM. The CWDM VCSEL arrays make use of fully-oxidized distributed Bragg reflectors (DBRs) to provide the wideband reflectivity required for optical feedback and lasing across 140 rim. In addition, a novel optically-pumped active region design is presented. It is demonstrated, with an analytical model and experimental results, that the new active-region design significantly improves the carrier uniformity in the quantum wells and results in a 50% lasing threshold reduction and a 20°C improvement in the peak

Simultaneous 10 Gbps data and polarization-based pulse-per-second clock transmission using a single VCSEL for high-speed optical fibre access networks

Science.gov (United States)

Isoe, G. M.; Wassin, S.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

2017-01-01

Access networks based on vertical cavity surface emitting laser (VCSEL) transmitters offer alternative solution in delivering different high bandwidth, cost effective services to the customer premises. Clock and reference frequency distribution is critical for applications such as Coordinated Universal Time (UTC), GPS, banking and big data science projects. Simultaneous distribution of both data and timing signals over shared infrastructure is thus desirable. In this paper, we propose and experimentally demonstrate a novel, cost-effective technique for multi-signal modulation on a single VCSEL transmitter. Two signal types, an intensity modulated 10 Gbps data signal and a polarization-based pulse per second (PPS) clock signal are directly modulated onto a single VCSEL carrier at 1310 nm. Spectral efficiency is maximized by exploiting inherent orthogonal polarization switching of the VCSEL with changing bias in transmission of the PPS signal. A 10 Gbps VCSEL transmission with PPS over 11 km of G.652 fibre introduced a transmission penalty of 0.52 dB. The contribution of PPS to this penalty was found to be 0.08 dB.

Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization

Energy Technology Data Exchange (ETDEWEB)

Lamy, J.M.; Levallois, C.; Nakhar, A.; Caroff, P.; Paranthoen, C.; Piron, R.; Le Corre, A.; Loualiche, S. [UMR C6082 FOTON - INSA de Rennes, 20 Avenue des Buttes de Coesmes, 35043 Rennes (France); Ramdane, A. [Laboratoire de Photonique et Nanostructures, CNRS UPR20, Route de Nozay, 91460 Marcoussis (France)

2007-06-15

We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is measured. The optically pumped VCSEL is fabricated by metallic bonding, which allows the deposition of two dielectrics Bragg mirrors. The VCSEL with an active region based on InGaAs/InGaAsP quantum wells exhibits a lasing emission at 1.578 {mu}m at room temperature under continuous wave operation. The VCSEL with an active region based on quantum wires shows a luminescence at 1.53 {mu}m strongly polarized along the direction [1 anti 10] which is promising for the stabilization of in plane polarization of VCSEL emission. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization

International Nuclear Information System (INIS)

Lamy, J.M.; Levallois, C.; Nakhar, A.; Caroff, P.; Paranthoen, C.; Piron, R.; Le Corre, A.; Loualiche, S.; Ramdane, A.

2007-01-01

We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is measured. The optically pumped VCSEL is fabricated by metallic bonding, which allows the deposition of two dielectrics Bragg mirrors. The VCSEL with an active region based on InGaAs/InGaAsP quantum wells exhibits a lasing emission at 1.578 μm at room temperature under continuous wave operation. The VCSEL with an active region based on quantum wires shows a luminescence at 1.53 μm strongly polarized along the direction [1 anti 10] which is promising for the stabilization of in plane polarization of VCSEL emission. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Spectral-Modulation Characteristics of Vertical-Cavity Surface-Emitting Lasers

Science.gov (United States)

Vas'kovskaya, M. I.; Vasil'ev, V. V.; Zibrov, S. A.; Yakovlev, V. P.; Velichanskii, V. L.

2018-01-01

The requirements imposed on vertical-cavity surface-emitting lasers in a number of metrological problems in which optical pumping of alkali atoms is used are considered. For lasers produced by different manufacturers, these requirements are compared with the experimentally observed spectral characteristics at a constant pump current and in the microwave modulation mode. It is shown that a comparatively small number of lasers in the microwave modulation mode make it possible to obtain the spectrum required for atomic clocks based on the coherent population-trapping effect.

Comparative study on stained InGaAs quantum wells for high-speed optical-interconnect VCSELs

Science.gov (United States)

Li, Hui; Jia, Xiaowei

2018-05-01

The gain-carrier characteristics of InGaAs quantum well for 980 nm high-speed, energy-efficient vertical-cavity surface-emitting lasers are investigated. We specially studied the potentially InGaAs quantum well designs can be used for the active region of energy-efficient, temperature-stable 980-nm VCSEL, which introduced a quantum well gain peak wavelength-to-cavity resonance wavelength offset to improve the dynamic performance at high operation temperature. Several candidate quantum wells are being compared in theory and measurement. We found that ∼5 nm InGaAs QW with ∼6 nm barrier thickness is suitable for the active region of high-speed optical interconnect 980 nm VCSELs, and no significant improvement in the 20% range of In content of InGaAs QWs. The results are useful for next generation green photonic device design.

Optical interconnects based on VCSELs and low-loss silicon photonics

Science.gov (United States)

Aalto, Timo; Harjanne, Mikko; Karppinen, Mikko; Cherchi, Matteo; Sitomaniemi, Aila; Ollila, Jyrki; Malacarne, Antonio; Neumeyr, Christian

2018-02-01

Silicon photonics with micron-scale Si waveguides offers most of the benefits of submicron SOI technology while avoiding most of its limitations. In particular, thick silicon-on-insulator (SOI) waveguides offer 0.1 dB/cm propagation loss, polarization independency, broadband single-mode (SM) operation from 1.2 to >4 µm wavelength and ability to transmit high optical powers (>1 W). Here we describe the feasibility of Thick-SOI technology for advanced optical interconnects. With 12 μm SOI waveguides we demonstrate efficient coupling between standard single-mode fibers, vertical-cavity surface-emitting lasers (VCSELs) and photodetectors (PDs), as well as wavelength multiplexing in small footprint. Discrete VCSELs and PDs already support 28 Gb/s on-off keying (OOK), which shows a path towards 50-100 Gb/s bandwidth per wavelength by using more advanced modulation formats like PAM4. Directly modulated VCSELs enable very power-efficient optical interconnects for up to 40 km distance. Furthermore, with 3 μm SOI waveguides we demonstrate extremely dense and low-loss integration of numerous optical functions, such as multiplexers, filters, switches and delay lines. Also polarization independent and athermal operation is demonstrated. The latter is achieved by using short polymer waveguides to compensate for the thermo-optic effect in silicon. New concepts for isolator integration and polarization rotation are also explained.

Modeling of circular-grating surface-emitting lasers

Science.gov (United States)

Shams-Zadeh-Amiri, Ali M.

Grating-coupled surface-emitting lasers became an area of growing interest due to their salient features. Emission from a broad area normal to the wafer surface, makes them very well suited in high power applications and two- dimensional laser arrays. These new possibilities have caused an interest in different geometries to fully develop their potential. Among them, circular-grating lasers have the additional advantage of producing a narrow beam with a circular cross section. This special feature makes them ideal for coupling to optical fibers. All existing theoretical models dealing with circular- grating lasers only consider first-order gratings, or second-order gratings, neglecting surface emission. In this thesis, the emphasis is to develop accurate models describing the laser performance by considering the radiation field. Toward this aim, and due to the importance of the radiation modes in surface-emitting structures, a theoretical study of these modes in multilayer planar structures has been done in a rigorous and systematic fashion. Problems like orthogonality of the radiation modes have been treated very accurately. We have considered the inner product of radiation modes using the distribution theory. Orthogonality of degenerate radiation modes is an important issue. We have examined its validity using the transfer matrix method. It has been shown that orthogonality of degenerate radiation modes in a very special case leads to the Brewster theorem. In addition, simple analytical formulas for the normalization of radiation modes have been derived. We have shown that radiation modes can be handled in a much easier way than has been thought before. A closed-form spectral dyadic Green's function formulation of multilayer planar structures has been developed. In this formulation, both rectangular and cylindrical structures can be treated within the same mathematical framework. The Hankel transform of some auxiliary functions defined on a circular aperture has

Reconfigurable high-speed optical fibre networks: Optical wavelength conversion and switching using VCSELs to eliminate channel collisions

Science.gov (United States)

Boiyo, Duncan Kiboi; Chabata, T. V.; Kipnoo, E. K. Rotich; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

2017-01-01

We experimentally provide an alternative solution to channel collisions through up-wavelength conversion and switching by using vertical cavity surface-emitting lasers (VCSELs). This has been achieved by utilizing purely optical wavelength conversion on VCSELs at the low attenuation, 1550 nm transmission window. The corresponding transmission and bit error-rate (BER) performance evaluation is also presented. In this paper, two 1550 nm VCSELs with 50-150 GHz channel spacing are modulated with a 10 Gb/s NRZ PRBS 27-1 data and their interferences investigated. A channel interference penalty range of 0.15-1.63 dB is incurred for 150-50 GHz channel spacing without transmission. To avoid channel collisions and to minimize high interference penalties, the transmitting VCSEL with data is injected into the side-mode of a slave VCSEL to obtain a new up converted wavelength. A 16 dB extinction ratio of the incoming wavelength is achieved when a 15 dBm transmitting beam is injected into the side-mode of a -4.5 dBm slave VCSEL. At 8.5 Gb/s, a 1.1 dB conversion and a 0.5 dB transmission penalties are realized when the converted wavelength is transmitted over a 24.7 km G.655 fibre. This work offers a low-cost, effective wavelength conversion and channel switching to reduce channel collision probability by reconfiguring channels at the node of networks.

Characterization of InAs quantum wires on (001) InP: toward the realization of VCSEL structures with a stabilized polarization

OpenAIRE

Lamy , Jean-Michel; Levallois , Christophe; Nakkar , Abdulhadi; Caroff , Philippe; Paranthoen , Cyril; Dehaese , Olivier; Le Corre , Alain; Ramdane , Abderrahim; Loualiche , Slimane

2006-01-01

International audience; We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is...

Applications of Gunn lasers

Science.gov (United States)

Balkan, N.; Chung, S. H.

2008-04-01

The principle of the operation of a Gunn laser is based on the band to band recombination of impact ionized non-equilibrium electron-hole pairs in propagating high field space-charge domains in a Gunn diode, which is biased above the negative differential resistance threshold and placed in a Fabry-Perot or a vertical micro cavity (VCSEL). In conventional VCSEL structures, unless specific measures such as the addition of oxide apertures and use of small windows are employed, the lack of uniformity in the density of current injected into the active region can reduce the efficiency and delay the lasing threshold. In a vertical-cavity structured Gunn device, however, the current is uniformly injected into the active region independently of the distributed Bragg reflector (DBR) layers. Therefore, lasing occurs from the entire surface of the device. The light emission from Gunn domains is an electric field induced effect. Therefore, the operation of Gunn-VCSEL or F-P laser is independent of the polarity of the applied voltage. Red-NIR VCSELs emitting in the range of 630-850 nm are also possible when Ga 1-xAl xAs (x communications. Furthermore the device may find applications as an optical clock and cross link between microwave and NIR communications. The operation of a both Gunn-Fabry-Perot laser and Gunn-VCSEL has been demonstrated by us recently. In the current work we present the potential results of experimental and theoretical studies concerning the applications together with the gain and emission characteristics of Gunn-Lasers.

2 W high efficiency PbS mid-infrared surface emitting laser

Science.gov (United States)

Ishida, A.; Sugiyama, Y.; Isaji, Y.; Kodama, K.; Takano, Y.; Sakata, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Zogg, H.

2011-09-01

High efficiency laser operation with output power exceeding 2 W was obtained for vertical external-cavity PbS based IV-VI compound surface emitting quantum-well structures. The laser showed external quantum efficiency as high as 16%. Generally, mid-infrared III-V or II-VI semiconductor laser operation utilizing interband electron transitions are restricted by Auger recombination and free carrier absorption. Auger recombination is much lower in the IV-VI semiconductors, and the free-carrier absorption is significantly reduced by an optically pumped laser structure including multi-step optical excitation layers.

Ultrahigh speed endoscopic optical coherence tomography using micromotor imaging catheter and VCSEL technology.

Science.gov (United States)

Tsai, Tsung-Han; Potsaid, Benjamin; Tao, Yuankai K; Jayaraman, Vijaysekhar; Jiang, James; Heim, Peter J S; Kraus, Martin F; Zhou, Chao; Hornegger, Joachim; Mashimo, Hiroshi; Cable, Alex E; Fujimoto, James G

2013-07-01

We developed a micromotor based miniature catheter with an outer diameter of 3.2 mm for ultrahigh speed endoscopic swept source optical coherence tomography (OCT) using a vertical cavity surface-emitting laser (VCSEL) at a 1 MHz axial scan rate. The micromotor can rotate a micro-prism at several hundred frames per second with less than 5 V drive voltage to provide fast and stable scanning, which is not sensitive to the bending of the catheter. The side-viewing probe can be pulled back to acquire a three-dimensional (3D) data set covering a large area on the specimen. The VCSEL provides a high axial scan rate to support dense sampling under high frame rate operation. Using a high speed data acquisition system, in vivo 3D-OCT imaging in the rabbit GI tract and ex vivo imaging of a human colon specimen with 8 μm axial resolution, 8 μm lateral resolution and 1.2 mm depth range in tissue at a frame rate of 400 fps was demonstrated.

Transverse mode control in proton-implanted and oxide-confined VCSELs via patterned dielectric anti-phase filters

Science.gov (United States)

Kesler, Benjamin; O'Brien, Thomas; Dallesasse, John M.

2017-02-01

A novel method for controlling the transverse lasing modes in both proton implanted and oxide-confined vertical- cavity surface-emitting lasers (VCSELs) with a multi-layer, patterned, dielectric anti-phase (DAP) filter is pre- sented. Using a simple photolithographic liftoff process, dielectric layers are deposited and patterned on individual VCSELs to modify (increase or decrease) the mirror reflectivity across the emission aperture via anti-phase reflections, creating spatially-dependent threshold material gain. The shape of the dielectric pattern can be tailored to overlap with specific transverse VCSEL modes or subsets of transverse modes to either facilitate or inhibit lasing by decreasing or increasing, respectively, the threshold modal gain. A silicon dioxide (SiO2) and titanium dioxide (TiO2) anti-phase filter is used to achieve a single-fundamental-mode, continuous-wave output power greater than 4.0 mW in an oxide-confined VCSEL at a lasing wavelength of 850 nm. A filter consisting of SiO2 and TiO2 is used to facilitate injection-current-insensitive fundamental mode and lower order mode lasing in proton implanted VCSELs at a lasing wavelength of 850 nm. Higher refractive index dielectric materials such as amorphous silicon (a-Si) can be used to increase the effectiveness of the anti-phase filter on proton implanted devices by reducing the threshold modal gain of any spatially overlapping modes. This additive, non-destructive method allows for mode selection at any lasing wavelength and for any VCSEL layer structure without the need for semiconductor etching or epitaxial regrowth. It also offers the capability of designing a filter based upon available optical coating materials.

Semi-automatic characterization and simulation of VCSEL devices for high speed VSR communications

Science.gov (United States)

Pellevrault, S.; Toffano, Z.; Destrez, A.; Pez, M.; Quentel, F.

2006-04-01

Very short range (VSR) high bit rate optical fiber communications are an emerging market dedicated to local area networks, digital displays or board to board interconnects within real time calculators. In this technology, a very fast way to exchange data with high noise immunity and low-cost is needed. Optical multimode graded index fibers are used here because they have electrical noise immunity and are easier to handle than monomode fibers. 850 nm VCSEL are used in VSR communications because of their low cost, direct on-wafer tests, and the possibility of manufacturing VCSEL arrays very easily compared to classical optical transceivers using edge-emitting laser diodes. Although much research has been carried out in temperature modeling on VCSEL emitters, few studies have been devoted to characterizations over a very broad range of temperatures. Nowadays, VCSEL VSR communications tend to be used in severe environments such as space, avionics and military equipments. Therefore, a simple way to characterize VCSEL emitters over a broad range of temperature is required. In this paper, we propose a complete characterization of the emitter part of 2.5 Gb/s opto-electrical transceiver modules operating from -40°C to +120°C using 850 nm VCSELs. Our method uses simple and semi-automatic measurements of a given set of chosen device parameters in order to make fast and efficient simulations.

Strong Exciton-photon Coupling in Semiconductor Microcavities

DEFF Research Database (Denmark)

Jensen, Jacob Riis; Borri, Paola; Hvam, Jørn Märcher

1999-01-01

The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high directiona......The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high......-optical switches based on semiconductor microcavities....

Single-mode 850-nm vertical-cavity surface-emitting lasers with Zn-diffusion and oxide-relief apertures for > 50 Gbit/sec OOK and 4-PAM transmission

Science.gov (United States)

Shi, Jin-Wei; Wei, Chia-Chien; Chen, Jyehong; Ledentsov, N. N.; Yang, Ying-Jay

2017-02-01

Vertical-cavity surface-emitting lasers (VCSELs) has become the most important light source in the booming market of short-reach (targeted at 56 Gbit/sec data rate per channel (CEI-56G) with the total data rate up to 400 Gbit/sec. However, the serious modal dispersion of multi-mode fiber (MMF), limited speed of VCSEL, and its high resistance (> 150 Ω) seriously limits the >50 Gbit/sec linking distance (50 Gbit/sec transmission due to that it can save one-half of the required bandwidth. Nevertheless, a 4.7 dB optical power penalty and the linearity of transmitter would become issues in the 4-PAM linking performance. Besides, in the modern OI system, the optics transreceiver module must be packaged as close as possible with the integrated circuits (ICs). The heat generated from ICs will become an issue in speed of VSCEL. Here, we review our recent work about 850 nm VCSEL, which has unique Zn-diffusion/oxide-relief apertures and special p- doping active layer with strong wavelength detuning to further enhance its modulation speed and high-temperature (85°C) performances. Single-mode (SM) devices with high-speed ( 26 GHz), reasonable resistance ( 70 Ω) and moderate output power ( 1.5 mW) can be achieved. Error-free 54 Gbit/sec OOK transmission through 1km MMF has been realized by using such SM device with signal processing techniques. Besides, the volterra nonlinear equalizer has been applied in our 4-PAM 64 Gbit/sec transmission through 2-km OM4 MMF, which significantly enhance the linearity of device and outperforms fed forward equalization (FFE) technique. Record high bit-rate distance product of 128.km is confirmed for optical-interconnect applications.

Full 3D FDTD analysis of Electromagnetic Field in Photonic Crystal VCSEL

International Nuclear Information System (INIS)

Liu Fa; Xu Chen; Xie Yiyang; Zhao Zhenbo; Zhou Kang; Wang Baoqiang; Liu Yingming; Shen Guangdi

2011-01-01

The effect of etch damage to the mode characteristics of photonic crystal vertical cavity surface emitting lasers was simulated in this paper. The devices simulated in this paper are 850-nm GaAs-based VCSELs with photonic crystal. And the devices were simulated by using finite difference time domain (FDTD) method. Limited to the computer resource, the top DBR was simulated only, and the traverse size was smaller than the real size. In order to highlight the impact of the etch damage, several kinds of light sources and photonic crystal structures were simulated separately, and each situation is calculated in the condition of ideal photonic crystal and photonic crystal with etch damage respectively. All parameters of device and light feature are referred to the real condition.

Full 3D FDTD analysis of Electromagnetic Field in Photonic Crystal VCSEL

Energy Technology Data Exchange (ETDEWEB)

Liu Fa; Xu Chen; Xie Yiyang; Zhao Zhenbo; Zhou Kang; Wang Baoqiang; Liu Yingming; Shen Guangdi, E-mail: liufa20719@126.com [Key Laboratory of Opto-electronics Technology (Beijing University of Technology), Ministry of Education, Beijing University of Technology, 100 Ping Le Yuan, Chaoyang District, Beijing 100124 (China)

2011-02-01

The effect of etch damage to the mode characteristics of photonic crystal vertical cavity surface emitting lasers was simulated in this paper. The devices simulated in this paper are 850-nm GaAs-based VCSELs with photonic crystal. And the devices were simulated by using finite difference time domain (FDTD) method. Limited to the computer resource, the top DBR was simulated only, and the traverse size was smaller than the real size. In order to highlight the impact of the etch damage, several kinds of light sources and photonic crystal structures were simulated separately, and each situation is calculated in the condition of ideal photonic crystal and photonic crystal with etch damage respectively. All parameters of device and light feature are referred to the real condition.

Few-mode vertical-cavity surface-emitting laser: Optional emission of transverse modes with different polarizations

Science.gov (United States)

Zhong, Chuyu; Zhang, Xing; Hofmann, Werner; Yu, Lijuan; Liu, Jianguo; Ning, Yongqiang; Wang, Lijun

2018-05-01

Few-mode vertical-cavity surface-emitting lasers that can be controlled to emit certain modes and polarization states simply by changing the biased contacts are proposed and fabricated. By directly etching trenches in the p-doped distributed Bragg reflector, the upper mesa is separated into several submesas above the oxide layer. Individual contacts are then deposited. Each contact is used to control certain transverse modes with different polarization directions emitted from the corresponding submesa. These new devices can be seen as a prototype of compact laser sources in mode division multiplexing communications systems.

High-Speed, Radiation-Tolerant Laser Drivers in 0.13 $\\mu$m CMOS Technology for HEP Applications

CERN Document Server

AUTHOR|(CDS)2073369; Moreira, Paulo; Calvo, Daniela; De Remigis, Paolo; Olantera, Lauri; Soos, Csaba; Troska, Jan; Wyllie, Ken

2014-01-01

The gigabit laser driver (GBLD) and low-power GBLD (LpGBLD) are two radiation-tolerant laser drivers designed to drive laser diodes at data rates up to 4.8 Gb/s. They have been designed in the framework of the gigabit-transceiver (GBT) and versatile-link projects to provide fast optical links capable of operation in the radiation environment of future high-luminosity high-energy physics experiments. The GBLD provides laser bias and modulation currents up to 43 mA and 24 mA, respectively. It can thus be used to drive vertical cavity surface emitting laser (VCSEL) and edge-emitting laser diodes. A pre-emphasis circuit, which can provide up to 12 mA in 70 ps pulses, has also been implemented to compensate for high external capacitive loads. The current driving capabilities of the LpGBLD are 2 times smaller that those of the GBLD as it has been optimized to drive VCSELs in order to minimize the power consumption. Both application-specific integrated circuits are designed in 0.13 m commercial complementary metal-o...

Calibration and Field Deployment of the NSF G-V VCSEL Hygrometer

Science.gov (United States)

DiGangi, J. P.; O'Brien, A.; Diao, M.; Hamm, C.; Zhang, Q.; Beaton, S. P.; Zondlo, M. A.

2012-12-01

Cloud formation and dynamics have a significant influence on the Earth's radiative forcing budget, which illustrates the importance of clouds with respect to global climate. Therefore, an accurate understanding of the microscale processes dictating cloud formation is crucial for accurate computer modeling of global climate change. A critical tool for understanding these processes from an airborne platform is an instrument capable of measuring water vapor with both high accuracy and time, thus spatial, resolution. Our work focuses on an open-path, compact, vertical-cavity surface-emitting laser (VCSEL) absorption-based hygrometer, capable of 25 Hz temporal resolution, deployed on the NSF/NCAR Gulfstream-V aircraft platform. The open path nature of our instrument also helps to minimize sampling artifacts. We will discuss our efforts toward achieving within 5% accuracy over 5 orders of magnitude of water vapor concentrations. This involves an intercomparison of five independent calibration methods: ice surface saturators using an oil temperature bath, solvent slush baths (e.g. chloroform/LN2, water/ice), a research-grade frost point hygrometer, static pressure experiments, and Pt catalyzed hydrogen gas. This wide variety of available tools allows us to accurately constrain the calibrant water vapor concentrations both before and after the VCSEL hygrometer sampling chamber. For example, the mixing ratio as measured by research-grade frost point hygrometer after the VCSEL hygrometer agreed within 2% of the mixing ration expected from the water/ice bubbler source before the VCSEL over the temperature range -50°C to 20°C. Finally, due to the compact nature of our instrument, we are able to perform these calibrations simultaneously at the same temperatures (-80°C to 30°C) and pressures (150 mbar to 760 mbar) as sampled ambient air during a flight. This higher accuracy can significantly influence the science utilizing this data, which we will illustrate using

High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

Science.gov (United States)

Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.

2018-01-01

The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

Performance of a 60-GHz DCM-OFDM and BPSK-Impulse Ultra-Wideband System with Radio-Over-Fiber and Wireless Transmission Employing a Directly-Modulated VCSEL

DEFF Research Database (Denmark)

Beltrán, Marta; Jensen, Jesper Bevensee; Yu, Xianbin

2011-01-01

The performance of radio-over-fiber optical transmission employing vertical-cavity surface-emitting lasers (VCSELs), and further wireless transmission, of the two major ultra-wideband (UWB) implementations is reported when operating in the 60-GHz radio band. Performance is evaluated at 1.44 Gbit...... in bend-insensitive single-mode fiber with wireless transmission up to 5 m in both cases is demonstrated with no penalty. A simulation analysis has also been performed in order to investigate the operational limits. The analysis results are in excellent agreement with the experimental work and indicate...... good tolerance to chromatic dispersion due to the chirp characteristics of electro-optical conversion when a directly-modulated VCSEL is employed. The performance comparison indicates that BPSK-IR UWB exhibits better tolerance to optical transmission impairments requiring lower received optical power...

Optoelectronic integrated circuits utilising vertical-cavity surface-emitting semiconductor lasers

International Nuclear Information System (INIS)

Zakharov, S D; Fyodorov, V B; Tsvetkov, V V

1999-01-01

Optoelectronic integrated circuits with additional optical inputs/outputs, in which vertical-cavity surface-emitting (VCSE) lasers perform the data transfer functions, are considered. The mutual relationship and the 'affinity' between optical means for data transfer and processing, on the one hand, and the traditional electronic component base, on the other, are demonstrated in the case of implementation of three-dimensional interconnects with a high transmission capacity. Attention is drawn to the problems encountered when semiconductor injection lasers are used in communication lines. It is shown what role can be played by VCSE lasers in solving these problems. A detailed analysis is made of the topics relating to possible structural and technological solutions in the fabrication of single lasers and of their arrays, and also of the problems hindering integrating of lasers into emitter arrays. Considerable attention is given to integrated circuits with optoelectronic smart pixels. Various technological methods for vertical integration of GaAs VCSE lasers with the silicon substrate of a microcircuit (chip) are discussed. (review)

Time skewing and amplitude nonlinearity mitigation by feedback equalization for 56 Gbps VCSEL-based PAM-4 links

Science.gov (United States)

You, Yue; Zhang, Wenjia; Sun, Lin; Du, Jiangbing; Liang, Chenyu; Yang, Fan; He, Zuyuan

2018-03-01

The vertical cavity surface emitting laser (VCSEL)-based multimode optical transceivers enabled by pulse amplitude modulation (PAM)-4 will be commercialized in near future to meet the 400-Gbps standard short reach optical interconnects. It is still challenging to achieve over 56/112-Gbps with the multilevel signaling as the multimode property of the device and link would introduce the nonlinear temporal response for the different levels. In this work, we scrutinize the distortions that relates to the multilevel feature of PAM-4 modulation, and propose an effective feedback equalization scheme for 56-Gbps VCSEL-based PAM-4 optical interconnects system to mitigate the distortions caused by eye timing-skew and nonlinear power-dependent noise. Level redistribution at Tx side is theoretically modeled and constructed to achieve equivalent symbol error ratios (SERs) of four levels and improved BER performance. The cause of the eye skewing and the mitigation approach are also simulated at 100-Gbps and experimentally investigated at 56-Gbps. The results indicate more than 2-dB power penalty improvement has been achieved by using such a distortion aware equalizer.

High phase noise tolerant pilot-tone-aided DP-QPSK optical communication systems

DEFF Research Database (Denmark)

Zhang, Xu; Pang, Xiaodan; Deng, Lei

2012-01-01

In this paper we experimentally demonstrate a novel, high phase-noise tolerant, optical dual polarization (DP) quadrature phase-shift keying (QPSK) communication system based on pilot-tone-aided phase noise cancellation (PNC) algorithm. Vertical cavity surface emitting lasers (VCSELs) with approx......In this paper we experimentally demonstrate a novel, high phase-noise tolerant, optical dual polarization (DP) quadrature phase-shift keying (QPSK) communication system based on pilot-tone-aided phase noise cancellation (PNC) algorithm. Vertical cavity surface emitting lasers (VCSELs...

Semiconductor lasers driven by self-sustained chaotic electronic oscillators and applications to optical chaos cryptography.

Science.gov (United States)

Kingni, Sifeu Takougang; Mbé, Jimmi Hervé Talla; Woafo, Paul

2012-09-01

In this work, we numerically study the dynamics of vertical cavity surface emitting laser (VCSEL) firstly when it is driven by Chua's oscillator, secondly in case where it is driven by a broad frequency spectral bandwidth chaotic oscillator developed by Nana et al. [Commun. Nonlinear Sci. Numer. Simul. 14, 2266 (2009)]. We demonstrated that the VCSEL generated robust chaotic dynamics compared to the ones found in VCSEL subject to a sinusoidally modulated current and therefore it is more suitable for chaos encryption techniques. The synchronization characteristics and the communication performances of unidirectional coupled VCSEL driven by the broad frequency spectral bandwidth chaotic oscillators are investigated numerically. The results show that high-quality synchronization and transmission of messages can be realized for suitable system parameters. Chaos shift keying method is successfully applied to encrypt a message at a high bitrate.

The application of cost-effective lasers in coherent UDWDM-OFDM-PON aided by effective phase noise suppression methods.

Science.gov (United States)

Liu, Yue; Yang, Chuanchuan; Yang, Feng; Li, Hongbin

2014-03-24

Digital coherent passive optical network (PON), especially the coherent orthogonal frequency division multiplexing PON (OFDM-PON), is a strong candidate for the 2nd-stage-next-generation PON (NG-PON2). As is known, OFDM is very sensitive to the laser phase noise which severely limits the application of the cost-effective distributed feedback (DFB) lasers and more energy-efficient vertical cavity surface emitting lasers (VCSEL) in the coherent OFDM-PON. The current long-reach coherent OFDM-PON experiments always choose the expensive external cavity laser (ECL) as the optical source for its narrow linewidth (usuallyOFDM-PON and study the possibility of the application of the DFB lasers and VCSEL in coherent OFDM-PON. A typical long-reach coherent ultra dense wavelength division multiplexing (UDWDM) OFDM-PON has been set up. The numerical results prove that the OBE method can stand severe phase noise of the lasers in this architecture and the DFB lasers as well as VCSEL can be used in coherent OFDM-PON. In this paper, we have also analyzed the performance of the RF-pilot-aided (RFP) phase noise suppression method in coherent OFDM-PON.

VCSEL-based sensors for distance and velocity

Science.gov (United States)

Moench, Holger; Carpaij, Mark; Gerlach, Philipp; Gronenborn, Stephan; Gudde, Ralph; Hellmig, Jochen; Kolb, Johanna; van der Lee, Alexander

2016-03-01

VCSEL based sensors can measure distance and velocity in three dimensional space and are already produced in high quantities for professional and consumer applications. Several physical principles are used: VCSELs are applied as infrared illumination for surveillance cameras. High power arrays combined with imaging optics provide a uniform illumination of scenes up to a distance of several hundred meters. Time-of-flight methods use a pulsed VCSEL as light source, either with strong single pulses at low duty cycle or with pulse trains. Because of the sensitivity to background light and the strong decrease of the signal with distance several Watts of laser power are needed at a distance of up to 100m. VCSEL arrays enable power scaling and can provide very short pulses at higher power density. Applications range from extended functions in a smartphone over industrial sensors up to automotive LIDAR for driver assistance and autonomous driving. Self-mixing interference works with coherent laser photons scattered back into the cavity. It is therefore insensitive to environmental light. The method is used to measure target velocity and distance with very high accuracy at distances up to one meter. Single-mode VCSELs with integrated photodiode and grating stabilized polarization enable very compact and cost effective products. Besides the well know application as computer input device new applications with even higher accuracy or for speed over ground measurement in automobiles and up to 250km/h are investigated. All measurement methods exploit the known VCSEL properties like robustness, stability over temperature and the potential for packages with integrated optics and electronics. This makes VCSEL sensors ideally suited for new mass applications in consumer and automotive markets.

Vertical-Cavity Surface-Emitting Lasers: Advanced Modulation Formats and Coherent Detection

DEFF Research Database (Denmark)

Rodes Lopez, Roberto

transmission link with real-time demodulation. Furthermore, advanced modulation formats are considered in this thesis to expand the state-of-the-art in high-speed short-range data transmission system based on VCSELs. First, directly modulation of a VCSEL with a 4-level pulse amplitude modulation (PAM-4) signal...... at 50 Gb/s is achieved. This is the highest data rate ever transmitted with a single VCSEL at the time of this thesis work. The capacity of this system is increased to 100 Gb/s by using polarization multiplexing emulation and forward error correction techniques. Compared to a non return-to-zero on-off...

Surface-Emitting Distributed Feedback Terahertz Quantum-Cascade Lasers in Metal-Metal Waveguides

Science.gov (United States)

Kumar, Sushil; Williams, Benjamin S.; Qin, Qi; Lee, Alan W. M.; Hu, Qing; Reno, John L.

2007-01-01

Single-mode surface-emitting distributed feedback terahertz quantumcascade lasers operating around 2.9 THz are developed in metal-metal waveguides. A combination of techniques including precise control of phase of reflection at the facets, and u e of metal on the sidewalls to eliminate higher-order lateral modes allow robust single-mode operation over a range of approximately 0.35 THz. Single-lobed far-field radiation pattern is obtained using a pi phase-shift in center of the second-order Bragg grating. A grating device operating at 2.93 THz lased up to 149 K in pulsed mode and a temperature tuning of 19 .7 GHz was observed from 5 K to 147 K. The same device lased up to 78 K in continuous-wave (cw) mode emitting more than 6 m W of cw power at 5 K. ln general, maximum temperature of pulsed operation for grating devices was within a few Kelvin of that of multi-mode Fabry-Perot ridge lasers

Capacity upgrade in short-reach optical fibre networks: simultaneous 4-PAM 20 Gbps data and polarization-modulated PPS clock signal using a single VCSEL carrier

Science.gov (United States)

Isoe, G. M.; Wassin, S.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

2017-11-01

In this work, a four-level pulse amplitude modulation (4-PAM) format with a polarization-modulated pulse per second (PPS) clock signal using a single vertical cavity surface emitting laser (VCSEL) carrier is for the first time experimentally demonstrated. We propose uncomplex alternative technique for increasing capacity and flexibility in short-reach optical communication links through multi-signal modulation onto a single VCSEL carrier. A 20 Gbps 4-PAM data signal is directly modulated onto a single mode 10 GHz bandwidth VCSEL carrier at 1310 nm, therefore, doubling the network bit rate. Carrier spectral efficiency is further maximized by exploiting the inherent orthogonal polarization switching of the VCSEL carrier with changing bias in transmission of a PPS clock signal. We, therefore, simultaneously transmit a 20 Gbps 4-PAM data signal and a polarization-based PPS clock signal using a single VCSEL carrier. It is the first time a signal VCSEL carrier is reported to simultaneously transmit a directly modulated 20 Gbps 4-PAM data signal and a polarization-based PPS clock signal. We further demonstrate on the design of a software-defined digital signal processing (DSP)-assisted receiver as an alternative to costly receiver hardware. Experimental results show that a 3.21 km fibre transmission with simultaneous 20 Gbps 4-PAM data signal and polarization-based PPS clock signal introduced a penalty of 3.76 dB. The contribution of polarization-based PPS clock signal to this penalty was found out to be 0.41 dB. Simultaneous distribution of data and timing clock signals over shared network infrastructure significantly increases the aggregated data rate at different optical network units (ONUs), without costly investment.

Self-mixing interferometry in vertical-cavity surface-emitting lasers for nanomechanical cantilever sensing

DEFF Research Database (Denmark)

Larsson, David; Greve, Anders; Hvam, Jørn Märcher

2009-01-01

We have experimentally investigated self-mixing interference produced by the feedback of light from a polymer micrometer-sized cantilever into a vertical-cavity surface-emitting laser for sensing applications. In particular we have investigated how the visibility of the optical output power...... and the junction voltage depends on the laser injection current and the distance to the cantilever. The highest power visibility obtained from cantilevers without reflective coatings was 60%, resulting in a very high sensitivity of 45 mV/nm with a noise floor below 1.2 mV. Different detection schemes are discussed....

Fast pulsing dynamics of a vertical-cavity surface-emitting laser operating in the low-frequency fluctuation regime

International Nuclear Information System (INIS)

Sciamanna, M.; Rogister, F.; Megret, P.; Blondel, M.; Masoller, C.; Abraham, N. B.

2003-01-01

We analyze the dynamics of a vertical-cavity surface-emitting laser with optical feedback operating in the low-frequency fluctuation regime. By focusing on the fast pulsing dynamics, we show that the two linearly polarized modes of the laser exhibit two qualitatively different behaviors: they emit pulses in phase just after a power dropout and they emit pulses out of phase after the recovery process of the output power. As a consequence, two distinct statistical distributions of the fast pulsating total intensity are observed, either monotonically decaying from the noise level or peaked around the mean intensity value. We further show that gain self-saturation of the lasing transition strongly modifies the shape of the intensity distribution

Resonant MEMS tunable VCSEL

DEFF Research Database (Denmark)

Ansbæk, Thor; Chung, Il-Sug; Semenova, Elizaveta

2013-01-01

We demonstrate how resonant excitation of a microelectro-mechanical system can be used to increase the tuning range of a vertical-cavity surface-emitting laser two-fold by enabling both blue- and red-shifting of the wavelength. In this way a short-cavity design enabling wide tuning range can...... be realized. A high-index-contrast subwavelength grating verticalcavity surface-emitting laser with a monolithically integrated anti-reflection coating is presented. By incorporating an antireflection coating into the air cavity, higher tuning efficiency can be achieved at low threshold current. The first...

Self-mixing interferometry in vertical-cavity surface-emitting lasers for nanomechanical cantilever sensing

Science.gov (United States)

Larsson, David; Greve, Anders; Hvam, Jørn M.; Boisen, Anja; Yvind, Kresten

2009-03-01

We have experimentally investigated self-mixing interference produced by the feedback of light from a polymer micrometer-sized cantilever into a vertical-cavity surface-emitting laser for sensing applications. In particular we have investigated how the visibility of the optical output power and the junction voltage depends on the laser injection current and the distance to the cantilever. The highest power visibility obtained from cantilevers without reflective coatings was ˜60%, resulting in a very high sensitivity of 45 mV/nm with a noise floor below 1.2 mV. Different detection schemes are discussed.

Atomic Interferometry, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Vertical cavity surface emitting lasers (VCSELs) is a new technology which can be used for developing high performance laser components for atom-based sensors...

5-μm vertical external-cavity surface-emitting laser (VECSEL) for spectroscopic applications

Science.gov (United States)

Rahim, M.; Khiar, A.; Felder, F.; Fill, M.; Zogg, H.; Sigrist, M. W.

2010-08-01

Mid-IR tunable VECSELs (Vertical External-Cavity Surface-Emitting Lasers) emitting at 4-7 μm wavelengths and suitable for spectroscopic sensing applications are described. They are realized with lead-chalcogenide (IV-VI) narrow band gap materials. The active part, a single 0.6-2-μm thick PbTe or PbSe gain layer, is grown onto an epitaxial Bragg mirror consisting of two or three Pb1- y Eu y Te/BaF2 quarter-wavelength layer pairs. All layers are deposited by MBE in a single run employing a BaF2 or Si substrate, no further processing is needed. The cavity is completed with an external curved top mirror, which is again realized with an epitaxial Bragg structure. Pumping is performed optically with a 1.5-μm laser. Maximum output power for pulsed operation is currently up to >1 Wp at -173°C and >10 mW at 10°C. In continuous wave (CW) operation, 18 mW at 100 K are reached. Still higher operating temperatures and/or powers are expected with better heat-removal structures and better designs employing QW (Quantum-Wells). Advantages of mid-IR VECSELs compared to edge-emitting lasers are their very good beam quality (circular beam with 15 μm are accessible with Pb1- y X y Z (X=Sr, Eu, Sn, Z=Se, Te) and/or including QW.

VCSELs and silicon light sources exploiting SOI grating mirrors

DEFF Research Database (Denmark)

Chung, Il-Sug; Mørk, Jesper

2012-01-01

In this talk, novel vertical-cavity laser structure consisting of a dielectric Bragg reflector, a III-V active region, and a high-index-contrast grating made in the Si layer of a silicon-on-insulator (SOI) wafer will be presented. In the Si light source version of this laser structure, the SOI...... the Bragg reflector. Numerical simulations show that both the silicon light source and the VCSEL exploiting SOI grating mirrors have superior performances, compared to existing silicon light sources and long wavelength VCSELs. These devices are highly adequate for chip-level optical interconnects as well...

Oxide-confined 2D VCSEL arrays for high-density inter/intra-chip interconnects

Science.gov (United States)

King, Roger; Michalzik, Rainer; Jung, Christian; Grabherr, Martin; Eberhard, Franz; Jaeger, Roland; Schnitzer, Peter; Ebeling, Karl J.

1998-04-01

We have designed and fabricated 4 X 8 vertical-cavity surface-emitting laser (VCSEL) arrays intended to be used as transmitters in short-distance parallel optical interconnects. In order to meet the requirements of 2D, high-speed optical links, each of the 32 laser diodes is supplied with two individual top contacts. The metallization scheme allows flip-chip mounting of the array modules junction-side down on silicon complementary metal oxide semiconductor (CMOS) chips. The optical and electrical characteristics across the arrays with device pitch of 250 micrometers are quite homogeneous. Arrays with 3 micrometers , 6 micrometers and 10 micrometers active diameter lasers have been investigated. The small devices show threshold currents of 600 (mu) A, single-mode output powers as high as 3 mW and maximum wavelength deviations of only 3 nm. The driving characteristics of all arrays are fully compatible to advanced 3.3 V CMOS technology. Using these arrays, we have measured small-signal modulation bandwidths exceeding 10 GHz and transmitted pseudo random data at 8 Gbit/s channel over 500 m graded index multimode fiber. This corresponds to a data transmission rate of 256 Gbit/s per array of 1 X 2 mm2 footprint area.

Optical and Electrical Characterization of InGaAsN used for 1.3 µm lasers

OpenAIRE

Dumitras, Gheorghe

2007-01-01

This work represents a study of the quaternary semiconductor alloy InGaAsN, which is used in quantum-well lasers. The optical part deals with absorption as well as normal and time-resolved photoluminescence. The results of this part are used for the optimization of InGaAsN growth by molecular beam epitaxy for state-of-the-art 1.3 µm Vertical Cavity Surface Emitting Lasers (VCSEL). The influence of the thermal annealing on the optical properties of InGaAsN quantum-wells is examined. By means o...

Photodegradation and polarization properties of vertical external surface-emitting organic laser

International Nuclear Information System (INIS)

Leang, Tatiana

2014-01-01

Although organic solid-state dye lasers can provide wavelength tunability in the whole visible spectrum and offers perspectives of low-cost compact lasers, they are still limited by several drawbacks, especially photodegradation. The geometry of a Vertical External Cavity Surface-emitting Organic Laser (VECSOL) enables organic lasers to reach high energies, excellent conversion efficiencies and good beam quality, it also enables an external control on many parameters, a feature that we have used here to study the photodegradation phenomenon as well as some polarization properties of organic solid-state lasers. In the first part of this thesis, we studied the lifetime of the laser upon varying several parameters (pump pulse-width, repetition rate, output coupling,...) and we found that the intracavity laser intensity, independently of the pump intensity, had a major on photodegradation rate. Moreover, we observed that the profile of the laser beam was also degrading with time: while it is Gaussian in the beginning it gradually shifts to an annular shape. In the second part, we investigated the polarization properties of VECSOLs, with a special emphasis on fluorescence properties of some typical dyes used in lasers. The crucial role played by resonant non-radiative energy transfers between dye molecules (HOMO-FRET) is evidenced and enables explaining the observed fluorescence depolarization, compared to the expected limiting fluorescence anisotropy. Energy transfers happen to play a negligible role above laser threshold, as the organic laser beam is shown to be linearly polarized in a wide range of experimental conditions when excitation occurs in the first singlet state. (author) [fr

Single-Mode VCSELs

Science.gov (United States)

Larsson, Anders; Gustavsson, Johan S.

The only active transverse mode in a truly single-mode VCSEL is the fundamental mode with a near Gaussian field distribution. A single-mode VCSEL produces a light beam of higher spectral purity, higher degree of coherence and lower divergence than a multimode VCSEL and the beam can be more precisely shaped and focused to a smaller spot. Such beam properties are required in many applications. In this chapter, after discussing applications of single-mode VCSELs, we introduce the basics of fields and modes in VCSELs and review designs implemented for single-mode emission from VCSELs in different materials and at different wavelengths. This includes VCSELs that are inherently single-mode as well as inherently multimode VCSELs where higher-order modes are suppressed by mode selective gain or loss. In each case we present the current state-of-the-art and discuss pros and cons. At the end, a specific example with experimental results is provided and, as a summary, the most promising designs based on current technologies are identified.

Vers l'intégration monolithique d'une micro-optique active en polymère sur VCELs

OpenAIRE

Reig , Benjamin

2011-01-01

This thesis deals with the study and the development of novel polymer MOEMS (Micro Optical Electrical Mechanical Systems) for Vertical-Cavity Surface-Emitting Lasers (VCSELs) passive and active beam shaping. To improve the photonic integration of these compact laser sources in optical communication and detection systems (sensors, biomedical analysis), we have designed and fabricated a polymer-based microsystem suitable for a monolithic integration on VCSELs. It includes a refractive microlens...

Continuously tunable monomode mid-infrared vertical external cavity surface emitting laser on Si

Science.gov (United States)

Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Hobrecker, F.; Zogg, H.

2010-10-01

A tunable PbTe based mid-infrared vertical external cavity surface emitting laser is described. The active part is a ˜1 μm thick PbTe layer grown epitaxially on a Bragg mirror on the Si-substrate. The cavity is terminated with a curved Si/SiO Bragg top mirror and pumped optically with a 1.55 μm laser. Cavity length is <100 μm in order that only one longitudinal mode is supported. By changing the cavity length, up to 5% wavelength continuous and mode-hop free tuning is achieved at fixed temperature. The total tuning extends from 5.6 to 4.7 μm at 100-170 K operation temperature.

Amplification of an Autodyne Signal in a Bistable Vertical-Cavity Surface-Emitting Laser with the Use of a Vibrational Resonance

Science.gov (United States)

Chizhevsky, V. N.

2018-01-01

For the first time, it is demonstrated experimentally that a vibrational resonance in a polarization-bistable vertical-cavity surface-emitting laser can be used to increase the laser response in autodyne detection of microvibrations from reflecting surfaces. In this case, more than 25-fold signal amplification is achieved. The influence of the asymmetry of the bistable potential on the microvibration-detection efficiency is studied.

VCSELs in short-pulse operation for time-of-flight applications

Science.gov (United States)

Moench, Holger; Gronenborn, Stephan; Gu, Xi; Gudde, Ralph; Herper, Markus; Kolb, Johanna; Miller, Michael; Smeets, Michael; Weigl, Alexander

2018-02-01

VCSEL arrays are the ideal light source for 3D imaging applications. The narrow emission spectrum and the ability for short pulses make them superior to LEDs. Combined with fast photodiodes or special camera chips spatial information can be obtained which is needed in diverse applications like camera autofocus, indoor navigation, 3D-object recognition, augmented reality or autonomously driving vehicles. Pulse operation at the ns scale and at low duty cycle can work with significantly higher current than traditionally used for VCSELs in continuous wave operation. With reduced thermal limitations at low average heat dissipation very high currents become feasible and tens of Watts output power have been realized with small VCSEL chips. The optical emission pattern of VCSELs can be tailored to the desired field of view using beam shaping elements. Such optical elements also enable laser safe class 1 products. A detailed analysis of the complete system and the operation mode is required to calculate the maximum permitted power for a safe system. The good VCSEL properties like robustness, stability over temperature and the potential for integrated solutions open a huge potential for VCSELs in new mass applications in the consumer and automotive markets.

A 4×8-Gbps VCSEL array driver ASIC and integration with a custom array transmitter module for the LHC front-end transmission

International Nuclear Information System (INIS)

Guo, Di; Liu, Chonghan; Chen, Jinghong; Chramowicz, John; Gong, Datao; He, Huiqin; Hou, Suen; Liu, Tiankuan; Prosser, Alan; Teng, Ping-Kun; Xiang, Annie C.; Xiao, Le; Ye, Jingbo

2016-01-01

This paper describes the design, fabrication and experiment results of a 4×8-Gbps Vertical-Cavity Surface-Emitting Laser (VCSEL) array driver ASIC with the adjustable active-shunt peaking technique and the novel balanced output structure under the Silicon-on-Sapphire (SOS) process, and a custom array optical transmitter module, featuring a compact size of 10 mm×15 mm×5.3 mm. Both the array driver ASIC and the module have been fully tested after integration as a complete parallel transmitter. Optical eye diagram of each channel passes the eye mask at 8 Gbps/ch with adjacent channel working simultaneously with a power consumption of 150 mW/ch. The optical transmission of Bit-Error Rate (BER) less than 10E-12 is achieved at an aggregated data rate of 4×8-Gbps. - Highlights: • An anode-driven VCSEL Array driver ASIC with the configurable active-shunt peaking technique in pre-driving stages. • A novel full-differential balanced output structure is used to minimize the noise and crosstalk from the power. • A custom array optical transmitter module with custom low-cost reliable alignment method.

A 4×8-Gbps VCSEL array driver ASIC and integration with a custom array transmitter module for the LHC front-end transmission

Energy Technology Data Exchange (ETDEWEB)

Guo, Di [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei Anhui 230026 (China); Liu, Chonghan [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Chen, Jinghong [Department of Electrical and Computer Engineering, University of Houston, Houston, TX 77004 (United States); Chramowicz, John [Real-Time Systems Engineering Department, Fermi National Laboratory, Batavia, IL 60510 (United States); Gong, Datao [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); He, Huiqin [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Shenzhen Polytechnic, Shenzhen 518055 (China); Hou, Suen [Institute of Physics, Academia Sinica, Nangang 11529, Taipei, Taiwan (China); Liu, Tiankuan [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Prosser, Alan [Real-Time Systems Engineering Department, Fermi National Laboratory, Batavia, IL 60510 (United States); Teng, Ping-Kun [Institute of Physics, Academia Sinica, Nangang 11529, Taipei, Taiwan (China); Xiang, Annie C. [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Xiao, Le [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States); Department of Physics, Central China Normal University, Wuhan, Hubei 430079 (China); Ye, Jingbo [Department of Physics, Southern Methodist University, Dallas, TX 75275 (United States)

2016-09-21

This paper describes the design, fabrication and experiment results of a 4×8-Gbps Vertical-Cavity Surface-Emitting Laser (VCSEL) array driver ASIC with the adjustable active-shunt peaking technique and the novel balanced output structure under the Silicon-on-Sapphire (SOS) process, and a custom array optical transmitter module, featuring a compact size of 10 mm×15 mm×5.3 mm. Both the array driver ASIC and the module have been fully tested after integration as a complete parallel transmitter. Optical eye diagram of each channel passes the eye mask at 8 Gbps/ch with adjacent channel working simultaneously with a power consumption of 150 mW/ch. The optical transmission of Bit-Error Rate (BER) less than 10E-12 is achieved at an aggregated data rate of 4×8-Gbps. - Highlights: • An anode-driven VCSEL Array driver ASIC with the configurable active-shunt peaking technique in pre-driving stages. • A novel full-differential balanced output structure is used to minimize the noise and crosstalk from the power. • A custom array optical transmitter module with custom low-cost reliable alignment method.

InP-based three-dimensional photonic integrated circuits

Science.gov (United States)

Tsou, Diana; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

2001-10-01

Fast-growing internet traffic volumes require high data communication bandwidth over longer distances than short wavelength (850 nm) multi-mode fiber systems can provide. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low cost, high-speed laser modules at 1310 and 1550 nm wavelengths are required. The great success of GaAs 850 nm VCSELs for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with available intrinsic materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits, which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits (PICs) have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform for fabricating InP-based photonic integrated circuits compatible with surface-emitting laser technology. Employing InP transparency at 1310 and 1550 nm wavelengths, we have created 3-D photonic integrated circuits (PICs) by utilizing light beams in both surface normal and in-plane directions within the InP-based structure

4.5 μm wavelength vertical external cavity surface emitting laser operating above room temperature

Science.gov (United States)

Rahim, M.; Khiar, A.; Felder, F.; Fill, M.; Zogg, H.

2009-05-01

A midinfrared vertical external cavity surface emitting laser with 4.5 μm emission wavelength and operating above room temperature has been realized. The active part consists of a single 850 nm thick epitaxial PbSe gain layer. It is followed by a 2 1/2 pair Pb1-yEuyTe/BaF2 Bragg mirror. No microstructural processing is needed. Excitation is done optically with a 1.5 μm wavelength laser. The device operates up to 45 °C with 100 ns pulses and delivers 6 mW output power at 27 °C heat-sink temperature.

Injection-locked single-mode VCSEL for orthogonal multiplexing and amplitude noise suppression

DEFF Research Database (Denmark)

Chipouline, Arkadi; Lyubopytov, Vladimir S.; Malekizandi, Mohammadreza

2017-01-01

It has been shown earlier, that the injection locked semiconductor lasers enable effective amplitude noise suppression [1] and makes possible an extra level of signal multiplexing-orthogonal modulation [2], where DPSK and ASK NRZ channels propagate at the same wavelength [3]. In our work we use...... an injection-locked 1550 nm VCSEL as a slave laser providing separation of amplitude and phase modulations, carrying independent information flows. To validate the possibility of phase modulation extraction by an injection-locked VCSEL, an experimental setup shown in Fig. 1 has been built....

Wavelength tunable MEMS VCSELs for OCT imaging

DEFF Research Database (Denmark)

Sahoo, Hitesh Kumar; Ansbæk, Thor; Ottaviano, Luisa

2018-01-01

MEMS VCSELs are one of the most promising swept source (SS) lasers for optical coherence tomography (OCT) and one of the best candidates for future integration with endoscopes, surgical probes and achieving an integrated OCT system. However, the current MEMS-based SS are processed on the III...

Reactive ion beam etching for microcavity surface emitting laser fabrication: technology and damage characterization

International Nuclear Information System (INIS)

Matsutani, A.; Tadokoro, T.; Koyama, F.; Iga, K.

1993-01-01

Reactive ion beam etching (RIBE) is an effective dry etching technique for the fabrication of micro-sized surface emitting (SE) lasers and optoelectronic devices. In this chapter, some etching characteristics for GaAs, InP and GaInAsP with a Cl 2 gas using an RIBE system are discussed. Micro-sized circular mesas including GaInAsP/InP multilayers with vertical sidewalls were fabricated. RIBE-induced damage in InP substrates was estimated by C-V and PL measurement. In addition, the removal of the induced damage by the second RIBE with different conditions for the InP wafer was proposed. The sidewall damage is characterized by photoluminescence emitted from the etched sidewall of a GaInAsP/InP DH wafer. (orig.)

Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

Science.gov (United States)

Fill, Matthias; Debernardi, Pierluigi; Felder, Ferdinand; Zogg, Hans

2013-11-01

Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

Energy Technology Data Exchange (ETDEWEB)

Fill, Matthias [ETH Zurich, Laser Spectroscopy and Sensing Lab, 8093 Zurich (Switzerland); Phocone AG, 8005 Zurich (Switzerland); Debernardi, Pierluigi [IEIIT-CNR, Torino 10129 (Italy); Felder, Ferdinand [Phocone AG, 8005 Zurich (Switzerland); Zogg, Hans [ETH Zurich (Switzerland)

2013-11-11

Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

Near Field and Far Field Effects in the Taguchi-Optimized Design of AN InP/GaAs-BASED Double Wafer-Fused Mqw Long-Wavelength Vertical-Cavity Surface-Emitting Laser

Science.gov (United States)

Menon, P. S.; Kandiah, K.; Mandeep, J. S.; Shaari, S.; Apte, P. R.

Long-wavelength VCSELs (LW-VCSEL) operating in the 1.55 μm wavelength regime offer the advantages of low dispersion and optical loss in fiber optic transmission systems which are crucial in increasing data transmission speed and reducing implementation cost of fiber-to-the-home (FTTH) access networks. LW-VCSELs are attractive light sources because they offer unique features such as low power consumption, narrow beam divergence and ease of fabrication for two-dimensional arrays. This paper compares the near field and far field effects of the numerically investigated LW-VCSEL for various design parameters of the device. The optical intensity profile far from the device surface, in the Fraunhofer region, is important for the optical coupling of the laser with other optical components. The near field pattern is obtained from the structure output whereas the far-field pattern is essentially a two-dimensional fast Fourier Transform (FFT) of the near-field pattern. Design parameters such as the number of wells in the multi-quantum-well (MQW) region, the thickness of the MQW and the effect of using Taguchi's orthogonal array method to optimize the device design parameters on the near/far field patterns are evaluated in this paper. We have successfully increased the peak lasing power from an initial 4.84 mW to 12.38 mW at a bias voltage of 2 V and optical wavelength of 1.55 μm using Taguchi's orthogonal array. As a result of the Taguchi optimization and fine tuning, the device threshold current is found to increase along with a slight decrease in the modulation speed due to increased device widths.

Characterization of 850nm-15μm GaAs/AlGaAs quantum-well ...

African Journals Online (AJOL)

In this report, operating characteristics and performance of 15μm diameter vertical cavity surface emitting lasers (VCSELs) emitting at 850nm and fabricated by gas source molecular beam-epitaxy (GSMBE) is presented. The device characterisation is performed by observing the continuous wave (cw) operation under room ...

Room-temperature continuous-wave operation of the In(Ga)As/GaAs quantum-dot VCSELs for the 1.3 µm optical-fibre communication

International Nuclear Information System (INIS)

Xu Dawei; Tong Cunzhu; Yoon, Soon Fatt; Fan Weijun; Zhang, Dao Hua; Wasiak, Michał; Piskorski, Łukasz; Gutowski, Krzysztof; Sarzała, Robert P; Nakwaski, Włodzimierz

2009-01-01

Efficient room-temperature (RT) continuous-wave (CW) lasing operation of the 1.3 µm MBE (molecular-beam epitaxy) In(Ga)As/GaAs quantum-dot (QD) top-emitting oxide-confined vertical-cavity surface-emitting diode lasers (VCSELs) for the second-generation optical-fibre communication has been achieved. In their design, a concept of a QD inside a quantum well (QW) has been utilized. The proposed In(Ga)As/GaAs QD active region is composed of five groups of three 8 nm In 0.15 Ga 0.85 As QWs, each containing one InAs QD sheet layer. In each group located close to successive anti-node positions of the optical standing wave within the 3λ cavity, QWs are separated by 32 nm GaAs barriers. Besides, at both active-region edges, additional single InGaAs QWs are located containing single QD layers. For the 10 µm diameter QD VCSELs, the RT CW threshold current of only 6.2 mA (7.9 kA cm −2 ), differential efficiency of 0.11 W A −1 and the maximal output power of 0.85 mW have been recorded. The experimental characteristics are in excellent agreement with theoretical ones obtained using the optical-electrical-thermal-recombination self-consistent computer model. According to this, for the 10 µm devices, the fundamental linearly polarized LP 01 mode remains the dominating one up to the current of 9.1 mA. The lowest RT CW lasing threshold below 5 mA is expected for 6 µm devices

High brightness diode lasers controlled by volume Bragg gratings

Science.gov (United States)

Glebov, Leonid

2017-02-01

Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

Improvement of kink characteristic of proton-implanted VCSEL with ITO overcoating

Science.gov (United States)

Lai, Fang-I.; Chang, Ya-Hsien; Laih, Li-Hong; Kuo, Hao-chung; Wang, S. C.

2004-06-01

Proton implanted VCSEL has been demonstrated with good reliability and decent modulation speed up to 1.25 Gb/s. However, kinks in current vs light output (L-I) has been always an issue in the gain-guided proton implant VCSEL. The kink related jitter and noise performance made it difficult to meet 2.5 Gb/s (OC-48) requirement. The kinks in L-I curve can be attributed to non-uniform carrier distribution induced non-uniform gain distribution within emission area. In this paper, the effects of a Ti/ITO transparent over-coating on the proton-implanted AlGaAs/GaAs VCSELs (15um diameter aperture) are investigated. The kinks distribution in L-I characteristics from a 2 inch wafer is greatly improved compared to conventional process. These VCSELs exhibit nearly kink-free L-I output performance with threshold currents ~3 mA, and the slope efficiencies ~ 0.25 W/A. The near-field emission patterns suggest the Ti/ITO over-coating facilitates the current spreading and uniform carrier distribution of the top VCSEL contact thus enhancing the laser performance. Finally, we performed high speed modulation measurement. The eye diagram of proton-implanted VCSELs with Ti/ITO transparent over-coating operating at 2.125 Gb/s with 10mA bias and 9dB extinction ratio shows very clean eye with jitter less than 35 ps.

Highly Selective Volatile Organic Compounds Breath Analysis Using a Broadly-Tunable Vertical-External-Cavity Surface-Emitting Laser.

Science.gov (United States)

Tuzson, Béla; Jágerská, Jana; Looser, Herbert; Graf, Manuel; Felder, Ferdinand; Fill, Matthias; Tappy, Luc; Emmenegger, Lukas

2017-06-20

A broadly tunable mid-infrared vertical-external-cavity surface-emitting laser (VECSEL) is employed in a direct absorption laser spectroscopic setup to measure breath acetone. The large wavelength coverage of more than 30 cm -1 at 3.38 μm allows, in addition to acetone, the simultaneous measurement of isoprene, ethanol, methanol, methane, and water. Despite the severe spectral interferences from water and alcohols, an unambiguous determination of acetone is demonstrated with a precision of 13 ppbv that is achieved after 5 min averaging at typical breath mean acetone levels in synthetic gas samples mimicking human breath.

Design of photonic crystal surface emitting lasers with indium-tin-oxide top claddings

Science.gov (United States)

Huang, Shen-Che; Hong, Kuo-Bin; Chiu, Han-Lun; Lan, Shao-Wun; Chang, Tsu-Chi; Li, Heng; Lu, Tien-Chang

2018-02-01

Electrically pumped GaAs-based photonic crystal surface emitting lasers were fabricated using a simple fabrication process by directly capping the indium-tin-oxide transparent conducting thin film as the top cladding layer upon a photonic crystal layer. Optimization of the separate-confinement heterostructures of a laser structure is crucial to improving characteristics by providing advantageous optical confinements. The turn-on voltage, series resistance, threshold current, and slope efficiency of the laser with a 100 × 100 μm2 photonic crystal area operated at room temperature were 1.3 V, 1.5 Ω, 121 mA, and 0.2 W/A, respectively. Furthermore, we demonstrated a single-lobed lasing wavelength of 928.6 nm at 200 mA and a wavelength redshift rate of 0.05 nm/K in temperature-dependent measurements. The device exhibited the maximum output power of approximately 400 mW at an injection current of 2 A; moreover, divergence angles of less than 1° for the unpolarized circular-shaped laser beam were measured at various injection currents. Overall, the low threshold current, excellent beam quality, small divergence, high output power, and high-operating-temperature (up to 343 K) of our devices indicate that they can potentially fill the requirements for next-generation light sources and optoelectronic devices.

Mid-infrared PbTe vertical external cavity surface emitting laser on Si-substrate with above 1 W output power

Science.gov (United States)

Rahim, M.; Fill, M.; Felder, F.; Chappuis, D.; Corda, M.; Zogg, H.

2009-12-01

Mid-infrared vertical external cavity surface emitting lasers (VECSELs) emitting above 1 W output power in pulsed mode and up to 17 mW in continuous mode at -172 °C were realized. Emission wavelength changes from 5 μm at -172 °C to 3.6 μm at 20 °C heat sink temperature. The active medium is a one wavelength thick PbTe layer grown by molecular beam epitaxy on a Si-substrate. It is followed by a 2.5 pair Pb1-yEuyTe/EuTe epitaxial Bragg mirror. The cavity is completed with an external curved Pb1-yEuyTe/BaF2 mirror. The VECSEL is optically pumped with 1.55 μm wavelength laser and In-soldered to Cu heat sink. No microstructural processing is needed.

Self-sustained pulsation in the oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

International Nuclear Information System (INIS)

Kuzmenkov, A. G.; Ustinov, V. M.; Sokolovskii, G. S.; Maleev, N. A.; Blokhin, S. A.; Deryagin, A. G.; Chumak, S. V.; Shulenkov, A. S.; Mikhrin, S. S.; Kovsh, A. R.; McRobbie, A. D.; Sibbett, W.; Cataluna, M. A.; Rafailov, E. U.

2007-01-01

The authors report the observation of strong self-pulsations in molecular-beam epitaxy-grown oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots. At continuous-wave operation, self-pulsations with pulse durations of 100-300 ps and repetition rates of 0.2-0.6 GHz were measured. The average optical power of the pulsations was 0.5-1.0 mW at the laser continuous-wave current values of 1.5-2.5 mA

Steady-state characteristics of lateral p-n junction vertical-cavity surface-emitting lasers

Science.gov (United States)

Ryzhii, V.; Tsutsui, N.; Khmyrova, I.; Ikegami, T.; Vaccaro, P. O.; Taniyama, H.; Aida, T.

2001-09-01

We developed an analytical device model for lateral p-n junction vertical-cavity surface-emitting lasers (LJVCSELs) with a quantum well active region. The model takes into account the features of the carrier injection, transport, and recombination in LJVCSELs as well as the features of the photon propagation in the cavity. This model is used for the calculation and analysis of the LJVCSEL steady-state characteristics. It is shown that the localization of the injected electrons primarily near the p-n junction and the reabsorption of lateral propagating photons significantly effects the LJVCSELs performance, in particular, the LJVCSEL threshold current and power-current characteristics. The reincarnation of electrons and holes due to the reabsorption of lateral propagating photons can substantially decrease the threshold current.

Considerations on the determining factors of the angular distribution of emitted particles in laser ablation

International Nuclear Information System (INIS)

Konomi, I.; Motohiro, T.; Kobayashi, T.; Asaoka, T.

2010-01-01

Simulations of particles which are emitted in laser ablation have been performed by the method of Direct Simulation Monte Carlo to investigate the deposition profiles of the emitted particles. The influences of the temperature, pressure and stream velocity of the initial evaporated layer formed during laser ablation process on the profile of the deposited film have been examined. It is found that the temperature gives a minor influence on the deposition profile, whereas the stream velocity and the pressure of the initial evaporated layer have a greater impact on the deposition profile. The energy in the direction of surface normal (E perpendicular ) and that in the parallel direction of the surface (E || ) are shown to increase and decrease, respectively after the laser irradiation due to collisions between the emitted particles, and this trend is magnified as the pressure increases. As a consequence, the stream velocity in the direction of surface normal increases with the increase in the pressure. A mechanism of the phenomenon that a metal with a lower sublimation energy shows a broader angular distribution of emitted particles is presented. It is suggested that low density of evaporated layer of a metal with a low sublimation energy at its melting point decreases the number of collisions in the layer, leading to the low stream velocity in the direction of surface normal, which results in the broader deposition profile of the emitted particles.

INTERACTION OF LASER RADIATION WITH MATTER: Influence of a target on operation of a pulsed CO2 laser emitting microsecond pulses

Science.gov (United States)

Baranov, V. Yu; Dolgov, V. A.; Malyuta, D. D.; Mezhevov, V. S.; Semak, V. V.

1987-12-01

The profile of pulses emitted by a TEA CO2 laser with an unstable resonator changed as a result of interaction of laser radiation with the surface of a metal in the presence of a breakdown plasma. This influence of a target on laser operation and its possible applications in laser processing of materials are analyzed.

Commercial mode-locked vertical external cavity surface emitting lasers

Science.gov (United States)

Head, C. Robin; Paboeuf, David; Ortega, Tiago; Lubeigt, Walter; Bialkowski, Bartlomiej; Lin, Jipeng; Hempler, Nils; Maker, Gareth T.; Malcolm, Graeme P. A.

2018-02-01

This paper presents the latest efforts in the development of commercial optically-pumped semiconductor disk lasers (SDLs) at M Squared Lasers. Two types of SDLs are currently being developed: an ultrafast system and a continuous wave single frequency system under the names of Dragonfly and Infinite, respectively. Both offer a compact, low-cost, easy-to-use and maintenance-free tool for a range of growing markets including nonlinear microscopy and quantum technology. To facilitate consumer uptake of the SDL technology, the performance specifications aim to closely match the currently employed systems. An extended Dragonfly system is being developed targeting the nonlinear microscopy market, which typically requires 1-W average power pulse trains with pulse durations below 200 fs. The pulse repetition frequency (PRF) of the commonly used laser systems, typically Titanium-sapphire lasers, is 80 MHz. This property is particularly challenging for mode-locked SDLs which tend to operate at GHz repetition rates, due to their short upper state carrier lifetime. Dragonfly has found a compromise at 200 MHz to balance mode-locking instabilities with a low PRF. In the ongoing development of Dragonfly, additional pulse compression and nonlinear spectral broadening stages are used to obtain pulse durations as short as 130 fs with an average power of 0.85 W, approaching the required performance. A variant of the Infinite system was adapted to provide a laser source suitable for the first stage of Sr atom cooling at 461 nm. Such a source requires average powers of approximately 1 W with a sub-MHz linewidth. As direct emission in the blue is not a viable approach at this stage, an SDL emitting at 922 nm followed by an M Squared Lasers SolTiS ECD-X doubler is currently under development. The SDL oscillator delivered >1 W of single frequency (RMS frequency noise <150kHz) light at 922 nm.

Long-wavelength photonic integrated circuits and avalanche photodetectors

Science.gov (United States)

Tsou, Yi-Jen D.; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

2001-10-01

Fast-growing internet traffic volume require high data communication bandwidth over longer distances. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low-cost, high-speed laser modules at 1310 to 1550 nm wavelengths and avalanche photodetectors are required. The great success of GaAs 850nm VCSEls for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits (PICs), which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform of InP-based PICs compatible with surface-emitting laser technology, as well as a high data rate externally modulated laser module. Avalanche photodetectors (APDs) are the key component in the receiver to achieve high data rate over long transmission distance because of their high sensitivity and large gain- bandwidth product. We have used wafer fusion technology to achieve In

Modular PbSrS/PbS mid-infrared vertical external cavity surface emitting laser on Si

Science.gov (United States)

Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Zogg, H.; Cao, D.; Kobayashi, S.; Yokoyama, T.; Ishida, A.

2011-07-01

A mid-infrared vertical external cavity surface emitting laser (VECSEL) based on undoped PbS is described herein. A 200 nm-thick PbS active layer embedded between PbSrS cladding layers forms a double heterostructure. The layers are grown on a lattice and thermal expansion mismatched Si-substrate. The substrate is placed onto a flat bottom Bragg mirror again grown on a Si substrate, and the VECSEL is completed with a curved top mirror. Pumping is done optically with a 1.55 μm laser diode. This leads to an extremely simple modular fabrication process. Lasing wavelengths range from 3-3.8 μm at 100-260 K heat sink temperature. The lowest threshold power is ˜210 mWp and highest output power is ˜250 mWp. The influence of the different recombination mechanism as well as free carrier absorption on the threshold power is modeled.

130-nm tunable grating-mirror VCSEL

DEFF Research Database (Denmark)

Chung, Il-Sug; Mørk, Jesper

2014-01-01

configuration instead of the extended cavity configuration can bring 130-nm tuning range around 1330-nm wavelength. The air-coupled cavity is known to reduce the quantum confinement factor in VCSELs, increasing threshold. In our air-coupled cavity HCG VCSEL case, the very short power penetration length...... in the HCG minimizes this reduction of the quantum confinement factor, not as significant as in the air-coupled cavity DBR VCSEL....

Microfabrication in free-standing gallium nitride using UV laser micromachining

International Nuclear Information System (INIS)

Gu, E.; Howard, H.; Conneely, A.; O'Connor, G.M.; Illy, E.K.; Knowles, M.R.H.; Edwards, P.R.; Martin, R.W.; Watson, I.M.; Dawson, M.D.

2006-01-01

Gallium nitride (GaN) and related alloys are important semiconductor materials for fabricating novel photonic devices such as ultraviolet (UV) light-emitting diodes (LEDs) and vertical cavity surface-emitting lasers (VCSELs). Recent technical advances have made free-standing GaN substrates available and affordable. However, these materials are strongly resistant to wet chemical etching and also, low etch rates restrict the use of dry etching. Thus, to develop alternative high-resolution processing for these materials is increasingly important. In this paper, we report the fabrication of microstructures in free-standing GaN using pulsed UV lasers. An effective method was first developed to remove the re-deposited materials due to the laser machining. In order to achieve controllable machining and high resolution in GaN, machining parameters were carefully optimised. Under the optimised conditions, precision features such as holes (through holes, blind or tapered holes) on a tens of micrometer length scale have been machined. To fabricate micro-trenches in GaN with vertical sidewalls and a flat bottom, different process strategies of laser machining were tested and optimised. Using this technique, we have successfully fabricated high-quality micro-trenches in free-standing GaN with various widths and depths. The approach combining UV laser micromachining and other processes is also discussed. Our results demonstrate that the pulsed UV laser is a powerful tool for fabricating precision microstructures and devices in gallium nitride

Vectorial analysis of dielectric photonic crystal VCSEL

DEFF Research Database (Denmark)

Chung, Il-Sug; Mørk, Jesper

2009-01-01

A new vertical-cavity surface-emitting laser structure employing a dielectric photonic crystal mirror has been suggested and been numerically investigated. The new structure has a smaller threshold gain, a moderate strength of single-transverse-mode operation, a high quality of emission beam free...

PbSe quantum well mid-infrared vertical external cavity surface emitting laser on Si-substrates

Science.gov (United States)

Fill, M.; Khiar, A.; Rahim, M.; Felder, F.; Zogg, H.

2011-05-01

Mid-infrared vertical external cavity surface emitting lasers based on PbSe/PbSrSe multi-quantum-well structures on Si-substrates are realized. A modular design allows growing the active region and the bottom Bragg mirror on two different Si-substrates, thus facilitating comparison between different structures. Lasing is observed from 3.3 to 5.1 μm wavelength and up to 52 °C heat sink temperature with 1.55 μm optical pumping. Simulations show that threshold powers are limited by Shockley-Read recombination with lifetimes as short as 0.1 ns. At higher temperatures, an additional threshold power increase occurs probably due to limited carrier diffusion length and carrier leakage, caused by an unfavorable band alignment.

Optimization of self-mixing modulation in VCSELs for sensing applications

DEFF Research Database (Denmark)

Larsson, David; Yvind, Kresten; Hvam, Jørn Märcher

2009-01-01

Ga1-xAs). The calculations are based on matrix multiplication for calculating effective reflectivity and transmission with external feedback, combined with a logarithmic gain model and standard laser rate equations. To improve the sensitivity towards self-mixing interference in VCSELs by simple...... epitaxial means and this should enable us to e.g. measure smaller bending deflections of cantilever sensors...

Radiation-hard/high-speed parallel optical links

Energy Technology Data Exchange (ETDEWEB)

Gan, K.K., E-mail: gan@mps.ohio-state.edu [Department of Physics, The Ohio State University, Columbus, OH 43210 (United States); Buchholz, P.; Heidbrink, S. [Fachbereich Physik, Universität Siegen, Siegen (Germany); Kagan, H.P.; Kass, R.D.; Moore, J.; Smith, D.S. [Department of Physics, The Ohio State University, Columbus, OH 43210 (United States); Vogt, M.; Ziolkowski, M. [Fachbereich Physik, Universität Siegen, Siegen (Germany)

2016-09-21

We have designed and fabricated a compact parallel optical engine for transmitting data at 5 Gb/s. The device consists of a 4-channel ASIC driving a VCSEL (Vertical Cavity Surface Emitting Laser) array in an optical package. The ASIC is designed using only core transistors in a 65 nm CMOS process to enhance the radiation-hardness. The ASIC contains an 8-bit DAC to control the bias and modulation currents of the individual channels in the VCSEL array. The performance of the optical engine up at 5 Gb/s is satisfactory.

Perovskite Materials for Light-Emitting Diodes and Lasers.

Science.gov (United States)

Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

2016-08-01

Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Blue laser diode (LD) and light emitting diode (LED) applications

International Nuclear Information System (INIS)

Bergh, Arpad A.

2004-01-01

The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography. As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc. Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity. Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Blue laser diode (LD) and light emitting diode (LED) applications

Energy Technology Data Exchange (ETDEWEB)

Bergh, Arpad A [Optoelectronics Industry Development Association (OIDA), 1133 Connecticut Avenue, NW, Suite 600, Washington, DC 20036-4329 (United States)

2004-09-01

The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography. As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc. Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity. Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The material system (AlGaIn)(AsSb). Properties and suitability for GaSb based vertical-resonator laser diodes

International Nuclear Information System (INIS)

Dier, Oliver

2008-01-01

The present thesis studies the particular properties of GaSb-based materials, where they differ from pure arsenides or phosphides, and also the impact of theses properties on long-wavelength vertical-cavity surface-emitting lasers (VCSELs). The goal is the first realisation of an electrically pumped VCSEL with a current aperture in this material system. After the basics, which are necessary for the understanding of the physical effects, the special features of antimony-containing materials are discussed with a focus on topics like band-structure, doping issues and miscibility gaps, which are relevant for devices. A VCSEL-structure optimized for long-wavelength applications is presented using an appropriate description of the device in its optical, electrical and thermal properties. A focus of this work is on the growth of laser-structures by molecular beam epitaxy. Annealing studies on this material showed a good prediction of the final wavelength after the temperature step, which is necessary due to the overgrowth of the tunnel-junction. The full-width at half maximum of the low-temperature photoluminescence signal shows a very low value of 3.95 meV for the quaternary active region. By using the type-II-band alignment of GaSb:Si and InAsSb:Si a low-resistive tunneljunction has been realised. After completion of the device processing a strong electroluminescence outside the DBR stopband and resonant modes within the stopband were found. A linear shift of the emission wavelength with temperature of 0.23 nm/K between -11 C and +30 C was found. (orig.)

Volumetric cutaneous microangiography of human skin in vivo by VCSEL swept-source optical coherence tomography

International Nuclear Information System (INIS)

Woo June Choi; Wang, R K

2014-01-01

We demonstrate volumetric cutaneous microangiography of the human skin in vivo that utilises 1.3-μm high-speed sweptsource optical coherence tomography (SS-OCT). The swept source is based on a micro-electro-mechanical (MEMS)-tunable vertical cavity surface emission laser (VCSEL) that is advantageous in terms of long coherence length over 50 mm and 100 nm spectral bandwidth, which enables the visualisation of microstructures within a few mm from the skin surface. We show that the skin microvasculature can be delineated in 3D SS-OCT images using ultrahigh-sensitive optical microangiography (UHS-OMAG) with a correlation mapping mask, providing a contrast enhanced blood perfusion map with capillary flow sensitivity. 3D microangiograms of a healthy human finger are shown with distinct cutaneous vessel architectures from different dermal layers and even within hypodermis. These findings suggest that the OCT microangiography could be a beneficial biomedical assay to assess cutaneous vascular functions in clinic. (laser biophotonics)

Volumetric cutaneous microangiography of human skin in vivo by VCSEL swept-source optical coherence tomography

Energy Technology Data Exchange (ETDEWEB)

Woo June Choi; Wang, R K [University of Washington, Department of Bioengineering, Seattle, Washington 98195 (United States)

2014-08-31

We demonstrate volumetric cutaneous microangiography of the human skin in vivo that utilises 1.3-μm high-speed sweptsource optical coherence tomography (SS-OCT). The swept source is based on a micro-electro-mechanical (MEMS)-tunable vertical cavity surface emission laser (VCSEL) that is advantageous in terms of long coherence length over 50 mm and 100 nm spectral bandwidth, which enables the visualisation of microstructures within a few mm from the skin surface. We show that the skin microvasculature can be delineated in 3D SS-OCT images using ultrahigh-sensitive optical microangiography (UHS-OMAG) with a correlation mapping mask, providing a contrast enhanced blood perfusion map with capillary flow sensitivity. 3D microangiograms of a healthy human finger are shown with distinct cutaneous vessel architectures from different dermal layers and even within hypodermis. These findings suggest that the OCT microangiography could be a beneficial biomedical assay to assess cutaneous vascular functions in clinic. (laser biophotonics)

Numerical methods for modeling photonic-crystal VCSELs

DEFF Research Database (Denmark)

Dems, Maciej; Chung, Il-Sug; Nyakas, Peter

2010-01-01

We show comparison of four different numerical methods for simulating Photonic-Crystal (PC) VCSELs. We present the theoretical basis behind each method and analyze the differences by studying a benchmark VCSEL structure, where the PC structure penetrates all VCSEL layers, the entire top-mirror DBR...... to the effective index method. The simulation results elucidate the strength and weaknesses of the analyzed methods; and outline the limits of applicability of the different models....

Continuous wave and modulation performance of 1550nm band wafer-fused VCSELs with MBE-grown InP-based active region and GaAs-based DBRs

Science.gov (United States)

Babichev, A. V.; Karachinsky, L. Ya.; Novikov, I. I.; Gladyshev, A. G.; Mikhailov, S.; Iakovlev, V.; Sirbu, A.; Stepniak, G.; Chorchos, L.; Turkiewicz, J. P.; Agustin, M.; Ledentsov, N. N.; Voropaev, K. O.; Ionov, A. S.; Egorov, A. Yu.

2017-02-01

We report for the first time on wafer-fused InGaAs-InP/AlGaAs-GaAs 1550 nm vertical-cavity surface-emitting lasers (VCSELs) incorporating a InAlGaAs/InP MQW active region with re-grown tunnel junction sandwiched between top and bottom undoped AlGaAs/GaAs distributed Bragg reflectors (DBRs) all grown by molecular beam epitaxy. InP-based active region includes seven compressively strained quantum wells (2.8 nm) optimized to provide high differential gain. Devices with this active region demonstrate lasing threshold current 2 mW in the temperature range of 10-70°C. The wall-plug efficiency (WPE) value-reaches 20 %. Lasing spectra show single mode CW operation with a longitudinal side mode suppression ratio (SMSR) up to 45 dB at > 2 mW output power. Small signal modulation response measurements show a 3-dB modulation bandwidth of 9 GHz at pump current of 10 mA and a D-factor value of 3 GHz/(mA)1/2. Open-eye diagram at 30 Gb/s of standard NRZ is demonstrated. Achieved CW and modulation performance is quite sufficient for fiber to the home (FTTH) applications where very large volumes of low-cost lasers are required.

Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

Science.gov (United States)

McInerney, John G.

2016-03-01

Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

True photonic band-gap mode-control in VCSEL structures

DEFF Research Database (Denmark)

Romstad, F.; Madsen, M.; Birkedal, Dan

2003-01-01

Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect.......Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect....

The miniature optical transmitter and transceiver for the High-Luminosity LHC (HL-LHC) experiments

International Nuclear Information System (INIS)

Liu, C; Zhao, X; Deng, B; Gong, D; Guo, D; Li, X; Liang, F; Liu, G; Liu, T; Xiang, A C; Ye, J; Chen, J; Huang, D; Hou, S; Teng, P-K

2013-01-01

We present the design and test results of the Miniature optical Transmitter (MTx) and Transceiver (MTRx) for the high luminosity LHC (HL-LHC) experiments. MTx and MTRx are Transmitter Optical Subassembly (TOSA) and Receiver Optical Subassembly (ROSA) based. There are two major developments: the Vertical Cavity Surface Emitting Laser (VCSEL) driver ASIC LOCld and the mechanical latch that provides the connection to fibers. In this paper, we concentrate on the justification of this work, the design of the latch and the test results of these two modules with a Commercial Off-The-Shelf (COTS) VCSEL driver

High-contrast gratings for long-wavelength laser integration on silicon

Science.gov (United States)

Sciancalepore, Corrado; Descos, Antoine; Bordel, Damien; Duprez, Hélène; Letartre, Xavier; Menezo, Sylvie; Ben Bakir, Badhise

2014-02-01

Silicon photonics is increasingly considered as the most promising way-out to the relentless growth of data traffic in today's telecommunications infrastructures, driving an increase in transmission rates and computing capabilities. This is in fact challenging the intrinsic limit of copper-based, short-reach interconnects and microelectronic circuits in data centers and server architectures to offer enough modulation bandwidth at reasonable power dissipation. In the context of the heterogeneous integration of III-V direct-bandgap materials on silicon, optics with high-contrast metastructures enables the efficient implementation of optical functions such as laser feedback, input/output (I/O) to active/passive components, and optical filtering, while heterogeneous integration of III-V layers provides sufficient optical gain, resulting in silicon-integrated laser sources. The latest ensure reduced packaging costs and reduced footprint for the optical transceivers, a key point for the short reach communications. The invited talk will introduce the audience to the latest breakthroughs concerning the use of high-contrast gratings (HCGs) for the integration of III-V-on-Si verticalcavity surface-emitting lasers (VCSELs) as well as Fabry-Perot edge-emitters (EELs) in the main telecom band around 1.55 μm. The strong near-field mode overlap within HCG mirrors can be exploited to implement unique optical functions such as dense wavelength division multiplexing (DWDM): a 16-λ100-GHz-spaced channels VCSEL array is demonstrated. On the other hand, high fabrication yields obtained via molecular wafer bonding of III-V alloys on silicon-on-insulator (SOI) conjugate excellent device performances with cost-effective high-throughput production, supporting industrial needs for a rapid research-to-market transfer.

Toward more efficient fabrication of high-density 2-D VCSEL arrays for spatial redundancy and/or multi-level signal communication

Science.gov (United States)

Roscher, Hendrik; Gerlach, Philipp; Khan, Faisal Nadeem; Kroner, Andrea; Stach, Martin; Weigl, Alexander; Michalzik, Rainer

2006-04-01

We present flip-chip attached high-speed VCSELs in 2-D arrays with record-high intra-cell packing densities. The advances of VCSEL array technology toward improved thermal performance and more efficient fabrication are reviewed, and the introduction of self-aligned features to these devices is pointed out. The structure of close-spaced wedge-shaped VCSELs is discussed and their static and dynamic characteristics are presented including an examination of the modal structure by near-field measurements. The lasers flip-chip bonded to a silicon-based test platform exhibit 3-dB and 10-dB bandwidths of 7.7 GHz and 9.8 GHz, respectively. Open 12.5 Gbit/s two-level eye patterns are demonstrated. We discuss the uses of high packing densities for the increase of the total amount of data throughput an array can deliver in the course of its life. One such approach is to provide up to two backup VCSELs per fiber channel that can extend the lifetimes of parallel transmitters through redundancy of light sources. Another is to increase the information density by using multiple VCSELs per 50 μm core diameter multimode fiber to generate more complex signals. A novel scheme using three butt-coupled VCSELs per fiber for the generation of four-level signals in the optical domain is proposed. First experiments are demonstrated using two VCSELs butt-coupled to the same standard glass fiber, each modulated with two-level signals to produce four-level signals at the photoreceiver. A four-level direct modulation of one VCSEL within a triple of devices produced first 20.6 Gbit/s (10.3 Gsymbols/s) four-level eyes, leaving two VCSELs as backup sources.

Vertical electro-absorption modulator design and its integration in a VCSEL

Science.gov (United States)

Marigo-Lombart, L.; Calvez, S.; Arnoult, A.; Thienpont, H.; Almuneau, G.; Panajotov, K.

2018-04-01

Electro-absorption modulators, either embedded in CMOS technology or integrated with a semiconductor laser, are of high interest for many applications such as optical communications, signal processing and 3D imaging. Recently, the integration of a surface-normal electro-absorption modulator into a vertical-cavity surface-emitting laser has been considered. In this paper we implement a simple quantum well electro-absorption model and design and optimize an asymmetric Fabry-Pérot semiconductor modulator while considering all physical properties within figures of merit. We also extend this model to account for the impact of temperature on the different parameters involved in the calculation of the absorption, such as refractive indices and exciton transition broadening. Two types of vertical modulator structures have been fabricated and experimentally characterized by reflectivity and photocurrent measurements demonstrating a very good agreement with our model. Finally, preliminary results of an electro-absorption modulator vertically integrated with a vertical-cavity surface-emitting laser device are presented, showing good modulation performances required for high speed communications.

InGaN multiple-quantum-well epifilms on GaN-sillicon substrates for microcavities and surface-emitting lasers

International Nuclear Information System (INIS)

Lee, June Key; Cho, Hoon; Kim, Bok Hee; Park, Si Hyun; Gu, Erdan; Watson, Ian; Dawson, Martin

2006-01-01

We report the processing of InGaN/GaN epifilms on GaN-silicon substrates. High-quality InGaN/GaN multi-quantum wells (MQWs) were grown on GaN-silicon substrates, and their membranes were successfully fabricated using a selective wet etching of silicon followed by a dry etching of the AlGaN buffer layer. With atomic force microscope (AFM) measurements and photoluminescence (PL) measurements, we investigated the physical and the optical properties of the InGaN/GaN MQWs membranes. On the InGaN/GaN MQW membranes, dielectric distributed Bragg reflector (DBRs) were successfully deposited, which give, new possibilities for use in GaN microcavity and surface-emitting laser fabrication.

Single-exposure two-dimensional superresolution in digital holography using a vertical cavity surface-emitting laser source array.

Science.gov (United States)

Granero, Luis; Zalevsky, Zeev; Micó, Vicente

2011-04-01

We present a new implementation capable of producing two-dimensional (2D) superresolution (SR) imaging in a single exposure by aperture synthesis in digital lensless Fourier holography when using angular multiplexing provided by a vertical cavity surface-emitting laser source array. The system performs the recording in a single CCD snapshot of a multiplexed hologram coming from the incoherent addition of multiple subholograms, where each contains information about a different 2D spatial frequency band of the object's spectrum. Thus, a set of nonoverlapping bandpass images of the input object can be recovered by Fourier transformation (FT) of the multiplexed hologram. The SR is obtained by coherent addition of the information contained in each bandpass image while generating an enlarged synthetic aperture. Experimental results demonstrate improvement in resolution and image quality.

Pb{sub 1–x}Eu{sub x}Te alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm

Energy Technology Data Exchange (ETDEWEB)

Pashkeev, D. A., E-mail: d.pashkeev@gmail.com; Selivanov, Yu. G.; Chizhevskii, E. G.; Zasavitskiy, I. I. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

2016-02-15

The optical properties of epitaxial layers and heterostructures based on Pb{sub 1–x}Eu{sub x}Te alloys (0 ⩽ x ⩽ 1) are analyzed in the context of designing Bragg mirrors and vertical-cavity surface-emitting lasers for the midinfrared spectral range. It is shown that the optimal heteropair for laser microcavities is Pb{sub 1–x}Eu{sub x}Te(x ≈ 0.06)/EuTe. On the basis of this heteropair, highly reflective Bragg mirrors consisting of just three periods and featuring a reflectance of R ⩾ 99.8% at the center of the stop band are grown by molecular-beam epitaxy on BaF{sub 2} (111) substrates. Single-mode optically pumped vertical-cavity surface-emitting lasers for the 4–5 μm spectral range operating at liquid-nitrogen temperatures are demonstrated.

VCSEL-based radiation tolerant optical data links

CERN Document Server

Gregor, I M; Dowell, J; Jovanovic, P; Kootz, A; Mahout, G; Mandic, I; Weidberg, T

2000-01-01

The Large Hadron Collider (LHC) will become operational in 2005 at The European Laboratory for Particle Physics (CERN). The LHC will be the highest energy proton-proton collider in the world. One of the electronic particle detectors which will operate at the LHC is called ATLAS. The environment for electronics placed within ATLAS is extremely hostile due to the high levels of radiation and the general lack of access to components during the expected 10 year lifetime of the experiment. It is planned to use custom radiation tolerant VCSEL- based optical links to transfer data from the ATLAS inner detector to remote data acquisition electronics. A low mass, non-magnetic and radiation tolerant VCSEL packaging has been developed for the most hostile region in the center of ATLAS where the inner detector is located. The performance of the package is reported on. Qualification tests of commercial VCSELs are also described. The VCSELs were irradiated with neutrons (up to 8.10/sup 14/ n(1 MeV)/cm/sup 2/) and annealing...

The influence of surface contamination on the ion emission from nanosecond-pulsed laser ablation of Al and Cu

Science.gov (United States)

Ullah, S.; Dogar, A. H.; Qayyum, H.; Rehman, Z. U.; Qayyum, A.

2018-04-01

Ions emitted from planar Al and Cu targets irradiated with a 1064 nm pulsed laser were investigated with the help of a time-resolving Langmuir probe. It was found that the intensity of the ions emitted from a target area rapidly decreases with the increasing number of laser shots, and seems to reach saturation after about 10 laser shots. The saturated intensity of Al and Cu ions was approximately 0.1 and 0.3 times the intensity of the respective ions measured at the first laser shot, respectively. The higher target ion intensity for the first few shots is thought to be due to the enhanced ionization of target atoms by vacuum-ultraviolet radiations emitted from the thermally excited/ionized surface contaminants. The reduction of target ion intensity with an increasing number of laser shots thus indicates the removal of contaminants from the irradiated surface area. Laser-cleaned Al and Cu surfaces were then allowed to be recontaminated with residual vacuum gases and the ion intensity was measured at various time delays. The prolonged exposure of the cleaned target to vacuum residual gases completely restores the ion intensity. Regarding surface contaminants removal, laser shots of higher intensities were found to be more effective than a higher number of laser shots having lower intensities.

A CMOS 0.13 mu m, 5-Gb/s laser driver for high energy physics applications

CERN Document Server

Mazza, G; Moreira, P; Rivetti, A; Soos, C; Troska, J; Wyllie, K

2012-01-01

The GigaBit Laser Driver (GBLD) is a radiation tolerant ASIC designed to drive both edge emitting lasers and VCSELs at data rates up to 5 Gb/s. It is part of the GigaBit Transceiver (GBT) and Versatile Link projects, which are designing a bi-directional optical data transmission system capable of operating in the radiation environment of a typical HEP experiment. The GBLD can provide laser diode modulation currents up to 24 mA and laser bias currents up to 43 mA. Pre- and de-emphasis functions are implemented to compensate for high external capacitive loads and asymmetric laser response. The chip, designed in a 0.13 $\\mu$m CMOS technology, is powered by a single 2.5 V power supply and can be programmed via an $I2C$ interface.

Continuous-wave Optically Pumped Lasing of Hybrid Perovskite VCSEL at Green Wavelength

KAUST Repository

Alias, Mohd Sharizal

2017-05-08

We demonstrate the lasing of a perovskite vertical-cavity surface-emitting laser at green wavelengths, which operates under continuous-wave optical pumping at room-temperature by embedding hybrid perovskite between dielectric mirrors deposited at low-temperature.

Continuous-wave Optically Pumped Lasing of Hybrid Perovskite VCSEL at Green Wavelength

KAUST Repository

Alias, Mohd Sharizal; Liu, Zhixiong; Alatawi, Abdullah; Ng, Tien Khee; Wu, Tao; Ooi, Boon S.

2017-01-01

We demonstrate the lasing of a perovskite vertical-cavity surface-emitting laser at green wavelengths, which operates under continuous-wave optical pumping at room-temperature by embedding hybrid perovskite between dielectric mirrors deposited at low-temperature.

Ultrahigh speed endoscopic swept source optical coherence tomography using a VCSEL light source and micromotor catheter

Science.gov (United States)

Tsai, Tsung-Han; Ahsen, Osman O.; Lee, Hsiang-Chieh; Liang, Kaicheng; Giacomelli, Michael G.; Potsaid, Benjamin M.; Tao, Yuankai K.; Jayaraman, Vijaysekhar; Kraus, Martin F.; Hornegger, Joachim; Figueiredo, Marisa; Huang, Qin; Mashimo, Hiroshi; Cable, Alex E.; Fujimoto, James G.

2014-03-01

We developed an ultrahigh speed endoscopic swept source optical coherence tomography (OCT) system for clinical gastroenterology using a vertical-cavity surface-emitting laser (VCSEL) and micromotor based imaging catheter, which provided an imaging speed of 600 kHz axial scan rate and 8 μm axial resolution in tissue. The micromotor catheter was 3.2 mm in diameter and could be introduced through the 3.7 mm accessory port of an endoscope. Imaging was performed at 400 frames per second with an 8 μm spot size using a pullback to generate volumetric data over 16 mm with a pixel spacing of 5 μm in the longitudinal direction. Three-dimensional OCT (3D-OCT) imaging was performed in patients with a cross section of pathologies undergoing standard upper and lower endoscopy at the Veterans Affairs Boston Healthcare System (VABHS). Patients with Barrett's esophagus, dysplasia, and inflammatory bowel disease were imaged. The use of distally actuated imaging catheters allowed OCT imaging with more flexibility such as volumetric imaging in the terminal ileum and the assessment of the hiatal hernia using retroflex imaging. The high rotational stability of the micromotor enabled 3D volumetric imaging with micron scale volumetric accuracy for both en face and cross-sectional imaging. The ability to perform 3D OCT imaging in the GI tract with microscopic accuracy should enable a wide range of studies to investigate the ability of OCT to detect pathology as well as assess treatment response.

Comparison of PAM and CAP modulations robustness against mode partition noise in optical links

Science.gov (United States)

Stepniak, Grzegorz

2017-08-01

Mode partition noise (MPN) of the laser employed at the transmitter can significantly degrade the transmission performance. In the paper, we introduce a simulation model of MPN in vertical cavity surface emitting laser (VCSEL) and simulate transmission of pulse amplitude modulation (PAM) and carrierless amplitude phase (CAP) signals in multimode fiber (MMF) link. By turning off other effects, like relative intensity noise (RIN), we focus solely on the influence of MPN on transmission performance degradation. Robustness of modulation and equalization type against MPN is studied.

100 Gb/s single VCSEL data transmission link

DEFF Research Database (Denmark)

Rodes Lopez, Roberto; Estaran Tolosa, Jose Manuel; Li, Bomin

2012-01-01

100 Gb/s optical fiber transmission link with a single 1.5 um VCSEL has been experimentally demonstrated using 4-level pulse amplitude modulation.......100 Gb/s optical fiber transmission link with a single 1.5 um VCSEL has been experimentally demonstrated using 4-level pulse amplitude modulation....

The material system (AlGaIn)(AsSb). Properties and suitability for GaSb based vertical-resonator laser diodes; Das Materialsystem (AlGaIn)(AsSb). Eigenschaften und Eignung fuer GaSb-basierte Vertikalresonator-Laserdioden

Energy Technology Data Exchange (ETDEWEB)

Dier, Oliver

2008-07-01

The present thesis studies the particular properties of GaSb-based materials, where they differ from pure arsenides or phosphides, and also the impact of theses properties on long-wavelength vertical-cavity surface-emitting lasers (VCSELs). The goal is the first realisation of an electrically pumped VCSEL with a current aperture in this material system. After the basics, which are necessary for the understanding of the physical effects, the special features of antimony-containing materials are discussed with a focus on topics like band-structure, doping issues and miscibility gaps, which are relevant for devices. A VCSEL-structure optimized for long-wavelength applications is presented using an appropriate description of the device in its optical, electrical and thermal properties. A focus of this work is on the growth of laser-structures by molecular beam epitaxy. Annealing studies on this material showed a good prediction of the final wavelength after the temperature step, which is necessary due to the overgrowth of the tunnel-junction. The full-width at half maximum of the low-temperature photoluminescence signal shows a very low value of 3.95 meV for the quaternary active region. By using the type-II-band alignment of GaSb:Si and InAsSb:Si a low-resistive tunneljunction has been realised. After completion of the device processing a strong electroluminescence outside the DBR stopband and resonant modes within the stopband were found. A linear shift of the emission wavelength with temperature of 0.23 nm/K between -11 C and +30 C was found. (orig.)

Photoelectron emission from metal surfaces by ultrashort laser pulses

International Nuclear Information System (INIS)

Faraggi, M. N.; Gravielle, M. S.; Silkin, V. M.

2006-01-01

Electron emission from metal surfaces produced by short laser pulses is studied within the framework of the distorted-wave formulation. The proposed approach, named surface-Volkov (SV) approximation, makes use of the band-structure based (BSB) model and the Volkov phase to describe the interaction of the emitted electron with the surface and the external electric field, respectively. The BSB model provides a realistic representation of the surface, based on a model potential that includes the main features of the surface band structure. The SV method is applied to evaluate the photoelectron emission from the valence band of Al(111). Angular and energy distributions are investigated for different parameters of the laser pulse, keeping in all cases the carrier frequency larger than the plasmon one

Temperature dependence of 1.55 μm VCSELs

Science.gov (United States)

Masum, J.; Balkan, N.; Adams, M. J.

1998-08-01

The temperature for minimum threshold carrier concentration in 1.55 μm VCSELs can be significantly lower than that at which the peak gain matches the cavity resonance. A simple model is implemented to investigate the magnitude of this temperature difference and to aid the design of VCSELs for room temperature operation.

Laser method of acoustical emission control from vibrating surfaces

Science.gov (United States)

Motyka, Zbigniew

2013-01-01

For limitation of the noise in environment, the necessity occurs of determining and location of sources of sounds emitted from surfaces of many machines and devices, assuring in effect the possibility of suitable constructional changes implementation, targeted at decreasing of their nuisance. In the paper, the results of tests and calculations are presented for plane surface sources emitting acoustic waves. The tests were realized with the use of scanning laser vibrometer which enabled remote registration and the spectral analysis of the surfaces vibrations. The known hybrid digital method developed for determination of sound wave emission from such surfaces divided into small finite elements was slightly modified by distinguishing the phase correlations between such vibrating elements. The final method being developed may find use in wide range of applications for different forms of vibrations of plane surfaces.

Low power consumption O-band VCSEL sources for upstream channels in PON systems

DEFF Research Database (Denmark)

Vegas Olmos, Juan José; Rodes Lopez, Roberto; Tafur Monroy, Idelfonso

2012-01-01

This paper presents an experimental validation of a low power optical network unit employing vertical-cavity surface-emitting lasers as upstream sources for passive optical networks with an increased power budget, enabling even larger splitting ratios....

Surface processing by high power excimer laser

Energy Technology Data Exchange (ETDEWEB)

Stehle, M [SOPRA, 92 - Bois-Colombes (France)

1995-03-01

Surface processing with lasers is a promising field of research and applications because lasers bring substantial advantages : laser beams work at distance, laser treatments are clean in respect of environment consideration and they offer innovative capabilities for surface treatment which cannot be reached by other way. Excimer lasers are pulsed, gaseous lasers which emit in UV spectral range - the most common are XeCl (308 nm), KrF (248 nm), ArF (193 nm). From 1980 up to 1994, many of them have been used for research, medical and industrial applications such as spectroscopy, PRK (photo-refractive keratotomy) and micro-machining. In the last six years, from 1987 up to 1993, efforts have been done in order to jump from 100 W average power up to 1 kW for XeCl laser at {lambda} = 308 nm. It was the aim of AMMTRA project in Japan as EU205 and EU213 Eureka projects in Europe. In this framework, SOPRA developed VEL (Very large Excimer Laser). In 1992, 1 kW (10 J x 100 Hz) millstone has been reached for the first time, this technology is based on X-Ray preionization and large laser medium (5 liters). Surface treatments based on this laser source are the main purpose of VEL Lasers. Some of them are given for instance : (a) Turbine blades made with metallic substrate and ceramic coatings on the top, are glazed in order to increase corrosion resistance of ceramic and metal sandwich. (b) Selective ablation of organic coatings deposited on fragile composite material is investigated in Aerospace industry. (c) Chock hardening of bulk metallic materials or alloys are investigated for automotive industry in order to increase wear resistance. (d) Ablation of thin surface oxides of polluted steels are under investigation in nuclear industry for decontamination. (J.P.N.).

Surface processing by high power excimer laser

International Nuclear Information System (INIS)

Stehle, M.

1995-01-01

Surface processing with lasers is a promising field of research and applications because lasers bring substantial advantages : laser beams work at distance, laser treatments are clean in respect of environment consideration and they offer innovative capabilities for surface treatment which cannot be reached by other way. Excimer lasers are pulsed, gaseous lasers which emit in UV spectral range - the most common are XeCl (308 nm), KrF (248 nm), ArF (193 nm). From 1980 up to 1994, many of them have been used for research, medical and industrial applications such as spectroscopy, PRK (photo-refractive keratotomy) and micro-machining. In the last six years, from 1987 up to 1993, efforts have been done in order to jump from 100 W average power up to 1 kW for XeCl laser at λ = 308 nm. It was the aim of AMMTRA project in Japan as EU205 and EU213 Eureka projects in Europe. In this framework, SOPRA developed VEL (Very large Excimer Laser). In 1992, 1 kW (10 J x 100 Hz) millstone has been reached for the first time, this technology is based on X-Ray preionization and large laser medium (5 liters). Surface treatments based on this laser source are the main purpose of VEL Lasers. Some of them are given for instance : a) Turbine blades made with metallic substrate and ceramic coatings on the top, are glazed in order to increase corrosion resistance of ceramic and metal sandwich. b) Selective ablation of organic coatings deposited on fragile composite material is investigated in Aerospace industry. c) Chock hardening of bulk metallic materials or alloys are investigated for automotive industry in order to increase wear resistance. d) Ablation of thin surface oxides of polluted steels are under investigation in nuclear industry for decontamination. (J.P.N.)

A simulation of laser energy absorption by nanowired surface

Energy Technology Data Exchange (ETDEWEB)

Vasconcelos, Miguel F.S.; Ramos, Alexandre F., E-mail: miguel.vasconcelos@usp.br, E-mail: alex.ramos@usp.br [Universidade de São Paulo (USP), SP (Brazil). Escola de Artes, Ciências e Humanidades

2017-07-01

Despite recent advances on research about laser inertial fusion energy, to increase the portion of energy absorbed by the target's surface from lasers remains as an important challenge. The plasma formed during the initial instants of laser arrival shields the target and prevents the absorption of laser energy by the deeper layers of the material. One strategy to circumvent that effect is the construction of targets whose surfaces are populated with nanowires. The nanowired surfaces have increased absorption of laser energy and constitutes a promising pathway for enhancing laser-matter coupling. In our work we present the results of simulations aiming to investigate how target's geometrical properties might contribute for maximizing laser energy absorption by material. Simulations have been carried out using the software FLASH, a multi-physics platform developed by researchers from the University of Chicago, written in FORTRAN 90 and Python. Different tools for generating target's geometry and analysis of results were developed using Python. Our results show that a nanowired surfaces has an increased energy absorption when compared with non wired surface. The software for visualization developed in this work also allowed an analysis of the spatial dynamics of the target's temperature, electron density, ionization levels and temperature of the radiation emitted by it. (author)

A simulation of laser energy absorption by nanowired surface

International Nuclear Information System (INIS)

Vasconcelos, Miguel F.S.; Ramos, Alexandre F.

2017-01-01

Despite recent advances on research about laser inertial fusion energy, to increase the portion of energy absorbed by the target's surface from lasers remains as an important challenge. The plasma formed during the initial instants of laser arrival shields the target and prevents the absorption of laser energy by the deeper layers of the material. One strategy to circumvent that effect is the construction of targets whose surfaces are populated with nanowires. The nanowired surfaces have increased absorption of laser energy and constitutes a promising pathway for enhancing laser-matter coupling. In our work we present the results of simulations aiming to investigate how target's geometrical properties might contribute for maximizing laser energy absorption by material. Simulations have been carried out using the software FLASH, a multi-physics platform developed by researchers from the University of Chicago, written in FORTRAN 90 and Python. Different tools for generating target's geometry and analysis of results were developed using Python. Our results show that a nanowired surfaces has an increased energy absorption when compared with non wired surface. The software for visualization developed in this work also allowed an analysis of the spatial dynamics of the target's temperature, electron density, ionization levels and temperature of the radiation emitted by it. (author)

Silicon light-emitting diodes and lasers photon breeding devices using dressed photons

CERN Document Server

Ohtsu, Motoichi

2016-01-01

This book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed photons. After presenting physical pictures of dressed photons and dressed-photon phonons, the principle of light emission by using dressed-photon phonons is reviewed. A novel phenomenon named photon breeding is also reviewed. Next, the fabrication and operation of light emitting diodes and lasers are described The role of coherent phonons in these devices is discussed. Finally, light-emitting diodes using other relevant crystals are described and other relevant devices are also reviewed.

Semiconductor quantum-dot lasers and amplifiers

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

2002-01-01

-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

Surface plasmon quantum cascade lasers as terahertz local oscillators

NARCIS (Netherlands)

Hajenius, M.; Khosropanah, P.; Hovenier, J. N.; Gao, J. R.; Klapwijk, T. M.; Barbieri, S.; Dhillon, S.; Filloux, P.; Sirtori, C.; Ritchie, D. A.; Beere, H. E.

2008-01-01

We characterize a heterodyne receiver based on a surface-plasmon waveguide quantum cascade laser (QCL) emitting at 2.84 THz as a local oscillator, and an NbN hot electron bolometer as a mixer. We find that the envelope of the far-field pattern of the QCL is diffraction-limited and superimposed onto

Organic light emitting diode with surface modification layer

Science.gov (United States)

Basil, John D.; Bhandari, Abhinav; Buhay, Harry; Arbab, Mehran; Marietti, Gary J.

2017-09-12

An organic light emitting diode (10) includes a substrate (12) having a first surface (14) and a second surface (16), a first electrode (32), and a second electrode (38). An emissive layer (36) is located between the first electrode (32) and the second electrode (38). The organic light emitting diode (10) further includes a surface modification layer (18). The surface modification layer (18) includes a non-planar surface (30, 52).

Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

KAUST Repository

Li, Xiaohang

2015-12-14

We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaNmultiple-quantum well(MQW)heterostructuresgrown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm2. Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ∼ 257.0 nm with a full width at half maximum (FWHM) of ∼12 nm and a superlinearly amplified SE peak at λ ∼ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ∼260 nm is the shortest wavelength of surface SE from III-nitride MQWheterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaNheterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaNheterostructuresgrown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers(VCSELs).

A full-duplex working integrated optoelectronic device for optical interconnect

Science.gov (United States)

Liu, Kai; Fan, Huize; Huang, Yongqing; Duan, Xiaofeng; Wang, Qi; Ren, Xiaomin; Wei, Qi; Cai, Shiwei

2018-05-01

In this paper, a full-duplex working integrated optoelectronic device is proposed. It is constructed by integrating a vertical cavity surface emitting laser (VCSEL) unit above a resonant cavity enhanced photodetector (RCE-PD) unit. Analysis shows that, the VCSEL unit has a threshold current of 1 mA and a slop efficiency of 0.66 W/A at 849.7 nm, the RCE-PD unit obtains its maximal absorption quantum efficiency of 90.24% at 811 nm with a FWHM of 4 nm. Moreover, the two units of the proposed integrated device can work independently from each other. So that the proposed integrated optoelectronic device can work full-duplex. It can be applied for single fiber bidirectional optical interconnects system.

Using a terrestrial laser scanner to measure spatiotemporal surface moisture dynamics

Science.gov (United States)

Smit, Y.; Donker, J.; Ruessink, G.

2017-12-01

A terrestrial laser scanner (TLS) is an active remote sensing technique that utilizes the round trip time of an emitted laser beam to provide the range between the laser scanner and the backscattering object. It is routinely used for topographic mapping, forest measurements or 3D city models since it derives useful object representations by means of a dense three-dimensional (3D) point cloud. Here, we present a novel application using the returned intensity of the emitted beam to detect surface moisture with the RIEGL VZ-400. Because this TLS operates at a wavelength near a water absorption band (1550 nm), reflectance is an accurate parameter to measure surface moisture over its full range. Five days of intensive laser scanning were performed on a Dutch beach to illustrate the applicability of the TLS. Concurrent gravimetric surface moisture samples were collected to calibrate the relation between reflectance and surface moisture. Results reveal the reflectance output is a robust parameter to measure surface moisture from the thin upper layer over its full range from 0% to 25%. The obtained calibration curve of the presented TLS, describing the relationship between reflectance and surface moisture, has a root-mean-square error of 2.7% and a correlation coefficient squared of 0.85. This relation holds to about 60 m from the TLS. Within this distance the TLS typically produces O(10^6-10^7) data points, which we averaged into surface moisture maps with a 1 x 1 m resolution. This grid size largely removes small moisture disturbances induced by, for example, footprints or tire tracks, while retaining larger scale trends. Concluding, TLS (RIEGL-VZ 400) is a highly suited technique to accurately and robustly measure spatiotemporal surface moisture variations on a coastal beach with high spatial ( 1 x 1 m) and temporal ( 15-30min.) resolution.

Dilute nitride vertical-cavity surface-emitting lasers

International Nuclear Information System (INIS)

Jouhti, T; Okhotnikov, O; Konttinen, J; Gomes, L A; Peng, C S; Karirinne, S; Pavelescu, E-M; Pessa, M

2003-01-01

A novel quaternary compound semiconductor material, Ga 1-x In x N y As 1-y (0 0.65 In 0.35 N 0.014 As 0.986 /GaAs quantum wells with special strain-mediating layers. The laser characterization was carried out by using a fibre pigtailed 980 nm pump laser diode, 980/1300 nm wavelength division multiplexer and an optical spectrum analyser. A high optical output power of 3.5 mW was coupled lenslessly into a standard single-mode fibre

3D finite element simulation of optical modes in VCSELs

OpenAIRE

Rozova, M.; Pomplun, J.; Zschiedrich, L.; Schmidt, F.; Burger, S.

2011-01-01

We present a finite element method (FEM) solver for computation of optical resonance modes in VCSELs. We perform a convergence study and demonstrate that high accuracies for 3D setups can be attained on standard computers. We also demonstrate simulations of thermo-optical effects in VCSELs.

32 x 16 CMOS smart pixel array for optical interconnects

Science.gov (United States)

Kim, Jongwoo; Guilfoyle, Peter S.; Stone, Richard V.; Hessenbruch, John M.; Choquette, Kent D.; Kiamilev, Fouad E.

2000-05-01

Free space optical interconnects can increase throughput capacities and eliminate much of the energy consumption required for `all electronic' systems. High speed optical interconnects can be achieved by integrating optoelectronic devices with conventional electronics. Smart pixel arrays have been developed which use optical interconnects. An individual smart pixel cell is composed of a vertical cavity surface emitting laser (VCSEL), a photodetector, an optical receiver, a laser driver, and digital logic circuitry. Oxide-confined VCSELs are being developed to operate at 850 nm with a threshold current of approximately 1 mA. Multiple quantum well photodetectors are being fabricated from AlGaAs for use with the 850 nm VCSELs. The VCSELs and photodetectors are being integrated with complementary metal oxide semiconductor (CMOS) circuitry using flip-chip bonding. CMOS circuitry is being integrated with a 32 X 16 smart pixel array. The 512 smart pixels are serially linked. Thus, an entire data stream may be clocked through the chip and output electrically by the last pixel. Electrical testing is being performed on the CMOS smart pixel array. Using an on-chip pseudo random number generator, a digital data sequence was cycled through the chip verifying operation of the digital circuitry. Although, the prototype chip was fabricated in 1.2 micrometers technology, simulations have demonstrated that the array can operate at 1 Gb/s per pixel using 0.5 micrometers technology.

Ion Production by Laser Impact on a Silver Surface

DEFF Research Database (Denmark)

Christensen, Bo Toftmann; Schou, Jørgen

Even at moderate fluence (0.6 -2.4 J/cm2) laser impact on metals in the UV regime results in a significant number of ions emitted from the surface. Even at this low fluence the particles ejected from a surface interact with each other in a so-called laser ablation plume. The ablated particles...... are largely neutrals at low fluence, but the fraction of ions increases strongly with fluence. We have irradiated silver in a vacuum chamber (~ 10-7 mbar) with a Nd:YAG laser at a wavelength of 355 nm. The ion flow in different directions has been measured with a hemispherical array of Langmuir probes...... range considered is also a typical range for pulsed laser deposition (PLD), by which the material is collected on a suitable substrate for thin film growth. PLD has the advantage compared with other film deposition methods, that even a complicated stoichiometry, e.g. metal oxides or alloys, can...

Miniaturised optical sensors for industrial applications

DEFF Research Database (Denmark)

Jakobsen, Michael Linde; Hanson, Steen Grüner

2010-01-01

. The technology is based on compact and low-cost laser sources such as Vertical Cavity Surface Emitting Lasers (VCSELs). The methods characterise the object motion by speckle translation in the near field (imaging) or far field (optical Fourier transform) by optical spatial filtering velocimetry. The volume...... of the two optical solutions is less than 1 cm3, including the application specific integrated circuit (ASIC), which processes the data and interfaces a PC/Laptop directly via a USB driver. The sensors are designed for working distances of 2 and 12 mm for near field and far field, respectively. We...

Electrically pumped edge-emitting photonic bandgap semiconductor laser

Science.gov (United States)

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

Characterization of laser-tissue interaction processes by low-boiling emitted substances

Science.gov (United States)

Weigmann, Hans-Juergen; Lademann, Juergen; Serfling, Ulrike; Lehnert, W.; Sterry, Wolfram; Meffert, H.

1996-01-01

Main point in this study was the investigation of the gaseous and low-boiling substances produced in the laser plume during cw CO2 laser and XeCl laser irradiation of tissue by gas chromatography (GC)/mass spectrometry. The characteristic emitted amounts of chemicals were determined quantitatively using porcine muscular tissue. The produced components were used to determine the character of the chemical reaction conditions inside the interaction zone. It was found that the temperature, and the water content of the tissue are the main parameter determining kind and amount of the emitted substances. The relative intensity of the GC peak of benzene corresponds to a high temperature inside the interaction area while a relative strong methylbutanal peak is connected with a lower temperature which favors Maillard type reaction products. The water content of the tissue determines the extent of oxidation processes during laser tissue interaction. For that reason the moisture in the tissue is the most important parameter to reduce the emission of harmful chemicals in the laser plume. The same methods of investigation are applicable to characterize the interaction of a controlled and an uncontrolled rf electrosurgery device with tissue. The results obtained with model tissue are in agreement with the situation characteristic in laser surgery.

Bidirectional uncompressed HD video distribution over fiber employing VCSELs

DEFF Research Database (Denmark)

Estaran Tolosa, Jose Manuel; Vegas Olmos, Juan José; Rodes, G. A.

2012-01-01

We report on a bidirectional system in which VCSELs are simultaneously modulated with two uncompressed HD video signals. The results show a large power budget and a negligible penalty over 10 km long transmission links.......We report on a bidirectional system in which VCSELs are simultaneously modulated with two uncompressed HD video signals. The results show a large power budget and a negligible penalty over 10 km long transmission links....

Electrically driven surface plasmon light-emitting diodes

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Fiber-optic link components for maintenance tasks in thermonuclear fusion environments

International Nuclear Information System (INIS)

Van Uffelen, M.; Nowodzinski, A.; Jucker, Ph.; Berghmans, F.; Brichard, B.; Vos, F.; Decreton, M.

1999-01-01

While standard single mode fibers proved their relative durability against radiation, our results indicate that specific rad-hard fibers can be mostly beneficial when exposed to doses exceeding the kGy-level. Gamma irradiations of multimode VCSELs (vertical cavity surface-emitting laser) confirmed their excellent radiation tolerance and thermal stability. However, particular care should be taken about the packaging, as severe degradation of focusing lenses can seriously limit the available optical power. Further experiments are planned and should complete these first results. (authors)

Digital Photonic Receivers for Wireless and Wireline Optical Fiber Transmission Links

DEFF Research Database (Denmark)

Guerrero Gonzalez, Neil

services. The experimental demonstration supported the following transmissions systems: a baseband, 5 Gbps, intensity modulation system employing a directly modulated vertical cavity surface emitting laser (VCSEL), a baseband 20 Gbps non-return-to-zero quadrature phase-shift keying (NRZ-QPSK) system...... receivers in hybrid wireless and wireline optical fiber transmission links. Furthermore, the digital signal processing framework presented in this thesis can be extended to design probabilistic-based digital photonic receivers that can find applications in cognitive heterogeneous reconfigurable optical...

Astigmatism-free high-brightness 1060 nm edge-emitting lasers with narrow circular beam profile.

Science.gov (United States)

Miah, Md Jarez; Kalosha, Vladimir P; Bimberg, Dieter; Pohl, Johannes; Weyers, Markus

2016-12-26

1060 nm high-brightness vertical broad-area edge-emitting lasers providing anastigmatic high optical power into a narrow circular beam profile are demonstrated. Ridge-waveguide (RW) lasers yield record 2.2 W single-transverse mode power in the 1060-nm wavelength range under continuous-wave (cw) operation at room temperature with excellent beam quality factor M2 ≤ 2. Independent of operating current the astigmatism is only 2.5 µm. 3 mm long broad-area (BA) lasers produce a θvert as narrow as 9° full width at half maximum, which agrees well with our simulation results, being insensitive to drive current. 5 mm long BA lasers deliver highest ever reported cw 12 W multimode output power among lasers showing θvert <10° in the 1060-nm wavelength range. The emitted laser beams from both RW and BA lasers show a perfect circular shape with ≤10° divergence angle at record 2.1 W and 4.2 W cw-mode output power, respectively.

Reliability and degradation of oxide VCSELs due to reaction to atmospheric water vapor

Science.gov (United States)

Dafinca, Alexandru; Weidberg, Anthony R.; McMahon, Steven J.; Grillo, Alexander A.; Farthouat, Philippe; Ziolkowski, Michael; Herrick, Robert W.

2013-03-01

850nm oxide-aperture VCSELs are susceptible to premature failure if operated while exposed to atmospheric water vapor, and not protected by hermetic packaging. The ATLAS detector in CERN's Large Hadron Collider (LHC) has had approximately 6000 channels of Parallel Optic VCSELs fielded under well-documented ambient conditions. Exact time-to-failure data has been collected on this large sample, providing for the first time actual failure data at use conditions. In addition, the same VCSELs were tested under a variety of accelerated conditions to allow us to construct a more accurate acceleration model. Failure analysis information will also be presented to show what we believe causes corrosion-related failure for such VCSELs.

Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

KAUST Repository

Frost, Thomas; Jahangir, Shafat; Stark, Ethan; Deshpande, Saniya; Hazari, Arnab Shashi; Zhao, Chao; Ooi, Boon S.; Bhattacharya, Pallab K.

2014-01-01

A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

KAUST Repository

Frost, Thomas

2014-08-13

A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

Laser Safety Evaluation of the MILES and Mini MILES Laser Emitting Components; TOPICAL

International Nuclear Information System (INIS)

AUGUSTONI, ARNOLD L.

2002-01-01

Laser safety evaluation and output emission measurements were performed (during October and November 2001) on SNL MILES and Mini MILES laser emitting components. The purpose, to verify that these components, not only meet the Class 1 (eye safe) laser hazard criteria of the CDRH Compliance Guide for Laser Products and 21 CFR 1040 Laser Product Performance Standard; but also meet the more stringent ANSI Std. z136.1-2000 Safe Use of Lasers conditions for Class 1 lasers that govern SNL laser operations. The results of these measurements confirmed that all of the Small Arms Laser Transmitters, as currently set (''as is''), meet the Class 1 criteria. Several of the Mini MILES Small Arms Transmitters did not. These were modified and re-tested and now meet the Class 1 laser hazard criteria. All but one System Controllers (hand held and rifle stock) met class 1 criteria for single trigger pulls and all presented Class 3a laser hazard levels if the trigger is held (continuous emission) for more than 5 seconds on a single point target. All units were Class 3a for ''aided'' viewing. These units were modified and re-tested and now meet the Class 1 hazard criteria for both ''aided'' as well as ''unaided'' viewing. All the Claymore Mine laser emitters tested are laser hazard Class 1 for both ''aided'' as well as ''unaided'' viewing

Laser generation of proton beams for the production of short-lived positron emitting radioisotopes

International Nuclear Information System (INIS)

Spencer, I.; Ledingham, K.W.D.; Singhal, R.P.; McCanny, T.; McKenna, P.; Clark, E.L.; Krushelnick, K.; Zepf, M.; Beg, F.N.; Tatarakis, M.; Dangor, A.E.; Norreys, P.A.; Clarke, R.J.; Allott, R.M.; Ross, I.N.

2001-01-01

Protons of energies up to 37 MeV have been generated when ultra-intense lasers (up to 10 20 W cm -2 ) interact with hydrogen containing solid targets. These protons can be used to induce nuclear reactions in secondary targets to produce β + -emitting nuclei of relevance to the nuclear medicine community, namely 11 C and 13 N via (p, n) and (p,α) reactions. Activities of the order of 200 kBq have been measured from a single laser pulse interacting with a thin solid target. The possibility of using ultra-intense lasers to produce commercial amounts of short-lived positron emitting sources for positron emission tomography (PET) is discussed

80-nm-tunable high-index-contrast subwavelength grating long-wavelength VCSEL: Proposal and numerical simulations

DEFF Research Database (Denmark)

Chung, Il-Sug; Mørk, Jesper; Sirbu, Alexei

2010-01-01

A widely-tunable single-mode long wavelength vertical-cavity surface-emitting laser structure employing a MEMStunable high-index-contrast subwavelength grating (HCG) is suggested and numerically investigated. A very large 80- nm linear tuning range was obtained as the HCG was actuated by -220 to ...

Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

International Nuclear Information System (INIS)

Li, Xiaohang; Xie, Hongen; Ponce, Fernando A.; Ryou, Jae-Hyun; Detchprohm, Theeradetch; Dupuis, Russell D.

2015-01-01

We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaN multiple-quantum well (MQW) heterostructures grown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm 2 . Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ∼ 257.0 nm with a full width at half maximum (FWHM) of ∼12 nm and a superlinearly amplified SE peak at λ ∼ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ∼260 nm is the shortest wavelength of surface SE from III-nitride MQW heterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaN heterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaN heterostructures grown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers (VCSELs)

Integrated Micro-Optical Fluorescence Detection System for Microfluidic Electrochromatography

International Nuclear Information System (INIS)

ALLERMAN, ANDREW A.; ARNOLD, DON W.; ASBILL, RANDOLPH E.; BAILEY, CHRISTOPHER G.; CARTER, TONY RAY; KEMME, SHANALYN A.; MATZKE, CAROLYN M.; SAMORA, SALLY; SWEATT, WILLIAM C.; WARREN, MIAL E.; WENDT, JOEL R.

1999-01-01

The authors describe the design and microfabrication of an extremely compact optical system as a key element in an integrated capillary-channel electrochromatograph with laser induced fluorescence detection. The optical design uses substrate-mode propagation within the fused silica substrate. The optical system includes a vertical cavity surface-emitting laser (VCSEL) array, two high performance microlenses and a commercial photodetector. The microlenses are multilevel diffractive optics patterned by electron beam lithography and etched by reactive ion etching in fused silica. Two generations of optical subsystems are described. The first generation design is integrated directly onto the capillary channel-containing substrate with a 6 mm separation between the VCSEL and photodetector. The second generation design separates the optical system onto its own module and the source to detector length is further compressed to 3.5 mm. The systems are designed for indirect fluorescence detection using infrared dyes. The first generation design has been tested with a 750 nm VCSEL exciting a 10(sup -4) M solution of CY-7 dye. The observed signal-to-noise ratio of better than 100:1 demonstrates that the background signal from scattered pump light is low despite the compact size of the optical system and meets the system sensitivity requirements

4 Gbps Impulse Radio (IR) Ultra-Wideband (UWB) Transmission over 100 Meters Multi Mode Fiber with 4 Meters Wireless Transmission

DEFF Research Database (Denmark)

Jensen, Jesper Bevensee; Rodes Lopez, Roberto; Caballero Jambrina, Antonio

2009-01-01

We present experimental demonstrations of in-building impulse radio (IR) ultra-wideband (UWB) link consisting of 100 m multi mode fiber (MMF) and 4 m wireless transmission at a record 4 Gbps, and a record 8 m wireless transmission at 2.5 Gbps. A directly modulated vertical cavity surface emitting...... laser (VCSEL) was used for the generation of the optical signal. 8 m at 2.5 Gbps corresponds to a bit rate - distance product of 20; the highest yet reported for wireless IR-UWB transmission...

Radiation-hard/high-speed parallel optical links

International Nuclear Information System (INIS)

Gan, K.K.; Buchholz, P.; Kagan, H.P.; Kass, R.D.; Moore, J.; Smith, D.S.; Wiese, A.; Ziolkowski, M.

2014-01-01

We have designed an ASIC for use in a parallel optical engine for a new layer of the ATLAS pixel detector in the initial phase of the LHC luminosity upgrade. The ASIC is a 12-channel VCSEL (Vertical Cavity Surface Emitting Laser) array driver capable of operating up to 5 Gb/s per channel. The ASIC is designed using a 130 nm CMOS process to enhance the radiation-hardness. A scheme for redundancy has also been implemented to allow bypassing of a broken VCSEL. The ASIC also contains a power-on reset circuit that sets the ASIC to a default configuration with no signal steering. In addition, the bias and modulation currents of the individual channels are programmable. The performance of the first prototype ASIC up to 5 Gb/s is satisfactory. Furthermore, we are able to program the bias and modulation currents and to bypass a broken VCSEL channel. We are currently upgrading our design to allow operation at 10 Gb/s per channel yielding an aggregated bandwidth of 120 Gb/s. Some preliminary results of the design will be presented

Half-cycle QAM modulation for VCSEL-based optical links

DEFF Research Database (Denmark)

Pham, Tien Thang; Rodes Lopez, Roberto; Jensen, Jesper Bevensee

2012-01-01

Abstract (40-Word Limit): Novel spectrally efficient half-cycle QAM modulation is experimentally demonstrated. 10 Gbps 4-QAM signal in 7.5-GHz bandwidth was successfully transmitted over 20 km SMF using an un-cooled 1.5 µm VCSEL with no equalization applied.......Abstract (40-Word Limit): Novel spectrally efficient half-cycle QAM modulation is experimentally demonstrated. 10 Gbps 4-QAM signal in 7.5-GHz bandwidth was successfully transmitted over 20 km SMF using an un-cooled 1.5 µm VCSEL with no equalization applied....

Laterally injected light-emitting diode and laser diode

Science.gov (United States)

Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

2015-06-16

A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

High-Capacity Short-Range Optical Communication Links

DEFF Research Database (Denmark)

Tatarczak, Anna

Over the last decade, we have observed a tremendous spread of end-user mobile devices. The user base of a mobile application can grow or shrink by millions per day. This situation creates a pressing need for highly scalable server infrastructure; a need nowadays satisfied through cloud computing...... offered by data centers. As the popularity of cloud computing soars, the demand for high-speed, short-range data center links grows. Vertical cavity surface emitting lasers (VCSEL) and multimode fibers (MMF) prove especially well-suited for such scenarios. VCSELs have high modulation bandwidths......, we achieve 10 Gbps over 400 m and then conrm the approach in an optimized system at 25 Gbps over 300 m. The techniques described in this thesis leverage additional degrees of freedom to better utilize the available resources of short-range links. The proposed schemes enable higher speeds and longer...

Erbium–ytterbium fibre laser emitting more than 13 W of power in ...

Indian Academy of Sciences (India)

2014-01-05

ytterbium fibre laser emitting more than 13W of ... Proceedings of the International Workshop/Conference on Computational Condensed Matter Physics and Materials Science (IWCCMP-2015). Posted on November 27, 2015.

Towards 100 Gbps over 100m MMF using a 850nm VCSEL

DEFF Research Database (Denmark)

Iglesias Olmedo, Miguel; Tatarczak, Anna; Zuo, Tianjian

2014-01-01

Employing MultiCAP signaling, successful 70.4 Gbps transmission over 100m of OM3 MMF using off-the-shelf 850 nm VCSEL with 10.1 GHz 3-dB bandwidth is experimentally demonstrated indicating the feasibility of achieving 100 Gbps with a single 25 GHz VCSEL. © 2014 OSA....

Mega-pixel PQR laser chips for interconnect, display ITS, and biocell-tweezers OEIC

Science.gov (United States)

Kwon, O'Dae; Yoon, J. H.; Kim, D. K.; Kim, Y. C.; Lee, S. E.; Kim, S. S.

2008-02-01

We describe a photonic quantum ring (PQR) laser device of three dimensional toroidal whispering gallery cavity. We have succeeded in fabricating the first genuine mega-pixel laser chips via regular semiconductor technology. This has been realized since the present injection laser emitting surface-normal dominant 3D whispering gallery modes (WGMs) can be operated CW with extremely low operating currents (μA-nA per pixel), together with the lasing temperature stabilities well above 140 deg C with minimal redshifts, which solves the well-known integration problems facing the conventional VCSEL. Such properties unusual for quantum well lasers become usual because the active region, involving vertically confining DBR structure in addition to the 2D concave WGM geometry, induces a 'photonic quantum ring (PQR)-like' carrier distribution through a photonic quantum corral effect. A few applications of such mega-pixel PQR chips are explained as follows: (A) Next-generation 3D semiconductor technologies demand a strategy on the inter-chip and intra-chip optical interconnect schemes with a key to the high-density emitter array. (B) Due to mounting traffic problems and fatalities ITS technology today is looking for a revolutionary change in the technology. We will thus outline how 'SLEEP-ITS' can emerge with the PQR's position-sensing capability. (C) We describe a recent PQR 'hole' laser of convex WGM: Mega-pixel PQR 'hole' laser chips are even easier to fabricate than PQR 'mesa' lasers. Genuine Laguerre-Gaussian (LG) beam patterns of PQR holes are very promising for biocell manipulations like sorting mouse myeloid leukemia (M1s) cells. (D) Energy saving and 3D speckle-free POR laser can outdo LEDs in view of red GaAs and blue GaN devices fabricated recently.

Semiconductor lasers stability, instability and chaos

CERN Document Server

Ohtsubo, Junji

2017-01-01

This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

Electromagnetic radiation emitted by a plasma produced in air by laser pulses with lambda = 10.6 μm

International Nuclear Information System (INIS)

Danilychev, V.A.; Zvorykin, V.D.; Kholin, I.V.; Chugunov, A.Y.

1981-01-01

The spectrum, brightness, and energy have been measured for the electromagnetic radiation emitted by a plasma produced in air near a solid surface by pulses from a high-power CO 2 laser. The air pressure was varied over the range p 0 = 0.1--760 torr, and the laser power density was varied over the range q = 5 x 10 6 --10 8 W/cm 2 . At p 0 > or approx. =2--5 torr the radiation properties of the plasma are determined by a laser-beam absorption wave which arises in the gas. The maximum brightness temperature, T/sub b/approx. =50 000 K (lambda = 400 +- 20 nm), is reached at p 0 = 25 torr. The emission spectrum is quite different from an equilibrium spectrum, consisting primarily of NII, OII, and NIII lines. The total energy radiation by the plasma in the wavelength interval 360--2600 nm into a solid angle of 4π sr reaches 2.3% of the laser pulse energy

Ultrashort laser pulses and electromagnetic pulse generation in air and on dielectric surfaces

International Nuclear Information System (INIS)

Sprangle, P.; Penano, J.R.; Hafizi, B.; Kapetanakos, C.A.

2004-01-01

Intense, ultrashort laser pulses propagating in the atmosphere have been observed to emit sub-THz electromagnetic pulses (EMPS). The purpose of this paper is to analyze EMP generation from the interaction of ultrashort laser pulses with air and with dielectric surfaces and to determine the efficiency of conversion of laser energy to EMP energy. In our self-consistent model the laser pulse partially ionizes the medium, forms a plasma filament, and through the ponderomotive forces associated with the laser pulse, drives plasma currents which are the source of the EMP. The propagating laser pulse evolves under the influence of diffraction, Kerr focusing, plasma defocusing, and energy depletion due to electron collisions and ionization. Collective effects and recombination processes are also included in the model. The duration of the EMP in air, at a fixed point, is found to be a few hundred femtoseconds, i.e., on the order of the laser pulse duration plus the electron collision time. For steady state laser pulse propagation the flux of EMP energy is nonradiative and axially directed. Radiative EMP energy is present only for nonsteady state or transient laser pulse propagation. The analysis also considers the generation of EMP on the surface of a dielectric on which an ultrashort laser pulse is incident. For typical laser parameters, the power and energy conversion efficiency from laser radiation to EMP radiation in both air and from dielectric surfaces is found to be extremely small, -8 . Results of full-scale, self-consistent, numerical simulations of atmospheric and dielectric surface EMP generation are presented. A recent experiment on atmospheric EMP generation is also simulated

Amplitude Noise Suppression and Orthogonal Multiplexing Using Injection-Locked Single-Mode VCSEL

DEFF Research Database (Denmark)

Lyubopytov, Vladimir; von Lerber, Tuomo; Lassas, Matti

2017-01-01

We experimentally demonstrate BER reduction and orthogonal modulation using an injection locked single-mode VCSEL. It allows us suppressing an amplitude noise of optical signal and/or double the capacity of an information channel.......We experimentally demonstrate BER reduction and orthogonal modulation using an injection locked single-mode VCSEL. It allows us suppressing an amplitude noise of optical signal and/or double the capacity of an information channel....

Real time 1.55 μm VCSEL-based coherent detection link

DEFF Research Database (Denmark)

Rodes Lopez, Roberto; Parekh, D.; Jensen, Jesper Bevensee

2012-01-01

This paper presents an experimental demonstration of VCSEL-based PON with simplified real-time coherent receiver at 2.5 Gbps. Receiver sensitivity of −37 dBm is achieved proving splitting ratio up to 2048 after 17 km fiber transmission.......This paper presents an experimental demonstration of VCSEL-based PON with simplified real-time coherent receiver at 2.5 Gbps. Receiver sensitivity of −37 dBm is achieved proving splitting ratio up to 2048 after 17 km fiber transmission....

Study on differences between high contrast grating reflectors for TM and TE polarizations and their impact on VCSEL designs

DEFF Research Database (Denmark)

Chung, Il-Sug

2015-01-01

-refractive-index media surrounding the HCG. This enables to achieve a very short effective cavity length for VCSELs, which is essential for ultrahigh speed VCSELs and MEMS-tunable VCSELs. The obtained understandings on polarization dependences will be able to serve as important design guidelines for various HCG...

System tests of radiation hard optical links for the ATLAS semiconductor tracker

International Nuclear Information System (INIS)

Charlton, D.G.; Dowell, J.D.; Homer, R.J.; Jovanovic, P.; Kenyon, I.R.; Mahout, G.; Shaylor, H.R.; Wilson, J.A.; Rudge, A.; Fopma, J.; Mandic, I.; Nickerson, R.B.; Shield, P.; Wastie, R.; Weidberg, A.R.; Eek, L.-O.; Go, A.; Lund-Jensen, B.; Pearce, M.; Soederqvist, J.; Morrissey, M.; White, D.J.

2000-01-01

A prototype optical data and Timing, Trigger and Control transmission system based on LEDs and PIN-diodes has been constructed. The system would be suitable in terms of radiation hardness and radiation length for use in the ATLAS SemiConductor Tracker. Bit error rate measurements were performed for the data links and for the links distributing the Timing, Trigger and Control data from the counting room to the front-end modules. The effects of cross-talk between the emitters and receivers were investigated. The advantages of using Vertical Cavity Surface Emitting Lasers (VCSELs) instead of LEDs are discussed

All-VCSEL based digital coherent detection link for multi Gbit/s WDM passive optical networks

DEFF Research Database (Denmark)

Rodes Lopez, Roberto; Jensen, Jesper Bevensee; Zibar, Darko

2010-01-01

with record receiver sensitivity of -36 dBm after transmission over 40 km standard single mode fiber. Digital signal processing compensates for frequency offset between the transmitter and the local oscillator VCSELs, and for chromatic dispersion. This system allows for uncooled VCSEL operation and fully...

Mechanism of equivalent electric dipole oscillation for high-order harmonic generation from grating-structured solid-surface by femtosecond laser pulse

Science.gov (United States)

Wang, Yang; Song, Hai-Ying; Liu, H. Y.; Liu, Shi-Bing

2017-07-01

We theoretically study high-order harmonic generation (HHG) from relativistically driven overdense plasma targets with rectangularly grating-structured surfaces by femtosecond laser pulses. Our particle-in-cell (PIC) simulations show that, under the conditions of low laser intensity and plasma density, the harmonics emit principally along small angles deviating from the target surface. Further investigation of the surface electron dynamics reveals that the electron bunches are formed by the interaction between the laser field and the target surface, giving rise to the oscillation of equivalent electric-dipole (OEED), which enhances specific harmonic orders. Our work helps understand the mechanism of harmonic emissions from grating targets and the distinction from the planar harmonic scheme.

Growth of GaAs-based VCSEL/RCE Structures for Optoelectronic Applications via Molecular Beam Epitaxy

Directory of Open Access Journals (Sweden)

A. S. Somintac

2003-06-01

Full Text Available High intensity and sharp emission peaks, at light-hole (842 nm and heavy-hole (857 nm excitonic transitionsfor a 90 Å GaAs quantum well (QW were observed for vertical-cavity surface-emitting laser (VCSELstructure. Excellent wavelength selectivity and sensitivity were demonstrated by resonant cavity enhanced(RCE photodetector at 859 nm, corresponding to the energy level of a 95 Å GaAs quantum well.

Angular distribution of atoms emitted from a SrZrO3 target by laser ablation under different laser fluences and oxygen pressures

International Nuclear Information System (INIS)

Konomi, I.; Motohiro, T.; Azuma, H.; Asaoka, T.; Nakazato, T.; Sato, E.; Shimizu, T.; Fujioka, S.; Sarukura, N.; Nishimura, H.

2010-01-01

Angular distributions of atoms emitted by laser ablation of perovskite-type oxide SrZrO 3 have been investigated using electron probe microanalysis with wavelength-dispersive spectroscopy and charge-coupled device photography with an interference filter. Each constituent element has been analyzed as a two-modal distribution composed of a broad cos m θ distribution and a narrow cos n θ distribution. The exponent n characterizes the component of laser ablation while the exponent m characterizes that of thermal evaporation, where a larger n or m means a narrower angular distribution. In vacuum, O (n=6) showed a broader distribution than those of Sr (n=16) and Zr (n=17), and Sr + exhibited a spatial distribution similar to that of Sr. As the laser fluence was increased from 1.1 to 4.4 J/cm 2 , the angular distribution of Sr became narrower. In the laser fluence range of 1.1-4.4 J/cm 2 , broadening of the angular distribution of Sr was observed only at the fluence of 1.1 J/cm 2 under the oxygen pressure of 10 Pa. Monte Carlo simulations were performed to estimate approximately the energy of emitted atoms, focusing on the broadening of the angular distribution under the oxygen pressure of 10 Pa. The energies of emitted atoms were estimated to be 1-20 eV for the laser fluence of 1.1 J/cm 2 , and more than 100 eV for 2.2 and 4.4 J/cm 2 .

Active optical system for advanced 3D surface structuring by laser remelting

Science.gov (United States)

Pütsch, O.; Temmler, A.; Stollenwerk, J.; Willenborg, E.; Loosen, P.

2015-03-01

Structuring by laser remelting enables completely new possibilities for designing surfaces since material is redistributed but not wasted. In addition to technological advantages, cost and time benefits yield from shortened process times, the avoidance of harmful chemicals and the elimination of subsequent finishing steps such as cleaning and polishing. The functional principle requires a completely new optical machine technology that maintains the spatial and temporal superposition and manipulation of three different laser beams emitted from two laser sources of different wavelength. The optical system has already been developed and demonstrated for the processing of flat samples of hot and cold working steel. However, since particularly the structuring of 3D-injection molds represents an application example of high innovation potential, the optical system has to take into account the elliptical beam geometry that occurs when the laser beams irradiate a curved surface. To take full advantage of structuring by remelting for the processing of 3D surfaces, additional optical functionality, called EPS (elliptical pre-shaping) has to be integrated into the existing set-up. The development of the beam shaping devices not only requires the analysis of the mechanisms of the beam projection but also a suitable optical design. Both aspects are discussed in this paper.

High-energy coherent terahertz radiation emitted by wide-angle electron beams from a laser-wakefield accelerator

Science.gov (United States)

Yang, Xue; Brunetti, Enrico; Jaroszynski, Dino A.

2018-04-01

High-charge electron beams produced by laser-wakefield accelerators are potentially novel, scalable sources of high-power terahertz radiation suitable for applications requiring high-intensity fields. When an intense laser pulse propagates in underdense plasma, it can generate femtosecond duration, self-injected picocoulomb electron bunches that accelerate on-axis to energies from 10s of MeV to several GeV, depending on laser intensity and plasma density. The process leading to the formation of the accelerating structure also generates non-injected, sub-picosecond duration, 1–2 MeV nanocoulomb electron beams emitted obliquely into a hollow cone around the laser propagation axis. These wide-angle beams are stable and depend weakly on laser and plasma parameters. Here we perform simulations to characterise the coherent transition radiation emitted by these beams if passed through a thin metal foil, or directly at the plasma–vacuum interface, showing that coherent terahertz radiation with 10s μJ to mJ-level energy can be produced with an optical to terahertz conversion efficiency up to 10‑4–10‑3.

Multi-longitudinal-mode micro-laser model

Science.gov (United States)

Staliunas, Kestutis

2017-10-01

We derive a convenient model for broad aperture micro-lasers, such as microchip lasers, broad area semiconductor lasers, or VCSELs, taking into account several longitudinal mode families. We provide linear stability analysis, and show characteristic spatio-temporal dynamics in such multi-longitudinal mode laser models. Moreover, we derive the coupled mode model in the presence of intracavity refraction index modulation (intracavity photonic crystal). Contribution to the Topical Issue "Theory and Applications of the Lugiato-Lefever Equation", edited by Yanne K. Chembo, Damia Gomila, Mustapha Tlidi, Curtis R. Menyuk.

VCSEL sources for optical fiber-wireless composite data links at 60GHz

DEFF Research Database (Denmark)

Vegas Olmos, Juan José; Pang, Xiaodan; Lebedev, Alexander

2013-01-01

This paper presents a performance assessment of 60-GHz mm-wave signal generation using photonic upconversion employing a VCSEL as source. The system reaches 10−9 BER over a variety of optical fibers for data rates of 1.25-Gbit/s.......This paper presents a performance assessment of 60-GHz mm-wave signal generation using photonic upconversion employing a VCSEL as source. The system reaches 10−9 BER over a variety of optical fibers for data rates of 1.25-Gbit/s....

Quantum-cascade laser photoacoustic detection of methane emitted from natural gas powered engines

Science.gov (United States)

Rocha, M. V.; Sthel, M. S.; Silva, M. G.; Paiva, L. B.; Pinheiro, F. W.; Miklòs, A.; Vargas, H.

2012-03-01

In this work we present a laser photoacoustic arrangement for the detection of the important greenhouse gas methane. A quantum-cascade laser and a differential photoacoustic cell were employed. A detection limit of 45 ppbv in nitrogen was achieved as well as a great selectivity. The same methodology was also tested in the detection of methane issued from natural gas powered vehicles (VNG) in Brazil, which demonstrates the excellent potential of this arrangement for greenhouse gas detection emitted from real sources.

Surface modifications induced by pulsed-laser texturing—Influence of laser impact on the surface properties

Energy Technology Data Exchange (ETDEWEB)

Costil, S., E-mail: sophie.costil@utbm.fr [IRTES-LERMPS, Université de Technologie de Belfort - Montbéliard, site de Sévenans, 90010 Belfort Cedex (France); Lamraoui, A.; Langlade, C. [IRTES-LERMPS, Université de Technologie de Belfort - Montbéliard, site de Sévenans, 90010 Belfort Cedex (France); Heintz, O.; Oltra, R. [ICB, Université de Bourgogne, 21078 Dijon Cedex (France)

2014-01-01

Laser cleaning technology provides a safe, environmentally friendly and very cost effective way to improve cleaning and surface preparation of metallic materials. Compared with efficient cleaning processes, it can avoid the disadvantages of ductile materials prepared by conventional technologies (cracks induced by sand-blasting for example) and treat only some selected areas (due to the optical fibers). By this way, laser technology could have several advantages and expand the range of thermal spraying. Moreover, new generations of lasers (fiber laser, disc laser) allow the development of new methods. Besides a significant bulk reduction, no maintenance, low operating cost, laser fibers can introduce alternative treatments. Combining a short-pulse laser with a scanner allows new applications in terms of surface preparation. By multiplying impacts using scanning laser, it is possible to shape the substrate surface to improve the coating adhesion as well as the mechanical behaviour. In addition, during the interactions of the laser beam with metallic surfaces, several modifications can be induced and particularly thermal effects. Indeed, under ambient conditions, a limited oxidation of the clean surface can occur. This phenomenon has been investigated in detail for silicon but few works have been reported concerning metallic materials. This paper aims at studying the surface modifications induced on aluminium alloy substrates after laser texturing. After morphological observations (SEM), a deeper surface analysis will be performed using XPS (X-ray photoelectron spectroscopy) measures and microhardness testing.

Mechanism of equivalent electric dipole oscillation for high-order harmonic generation from grating-structured solid-surface by femtosecond laser pulse

Energy Technology Data Exchange (ETDEWEB)

Wang, Yang; Song, Hai-Ying; Liu, H.Y.; Liu, Shi-Bing, E-mail: sbliu@bjut.edu.cn

2017-07-12

Highlights: • Proposed a valid mechanism of high harmonic generation by laser grating target interaction: oscillation of equivalent electric dipole (OEED). • Found that there also exist harmonic emission at large emission angle but not just near-surface direction as the former researches had pointed out. • Show the process of the formation and motion of electron bunches at the grating-target surface irradiating with femtosecond laser pulse. - Abstract: We theoretically study high-order harmonic generation (HHG) from relativistically driven overdense plasma targets with rectangularly grating-structured surfaces by femtosecond laser pulses. Our particle-in-cell (PIC) simulations show that, under the conditions of low laser intensity and plasma density, the harmonics emit principally along small angles deviating from the target surface. Further investigation of the surface electron dynamics reveals that the electron bunches are formed by the interaction between the laser field and the target surface, giving rise to the oscillation of equivalent electric-dipole (OEED), which enhances specific harmonic orders. Our work helps understand the mechanism of harmonic emissions from grating targets and the distinction from the planar harmonic scheme.

107.5 Gb/s 850 nm multi- and single-mode VCSEL transmission over 10 and 100 m of multi-mode fiber

DEFF Research Database (Denmark)

Puerta Ramírez, Rafael; Agustin, M.; Chorchos, L.

2016-01-01

First time successful 107.5 Gb/s MultiCAP 850 nm OM4 MMF transmissions over 10 m with multi-mode VCSEL and up to 100 m with single-mode VCSEL are demonstrated, with BER below 7% overhead FEC limit measured for each case.......First time successful 107.5 Gb/s MultiCAP 850 nm OM4 MMF transmissions over 10 m with multi-mode VCSEL and up to 100 m with single-mode VCSEL are demonstrated, with BER below 7% overhead FEC limit measured for each case....

Femtosecond laser-induced surface wettability modification of polystyrene surface

Science.gov (United States)

Wang, Bing; Wang, XinCai; Zheng, HongYu; Lam, YeeCheong

2016-12-01

In this paper, we demonstrated a simple method to create either a hydrophilic or hydrophobic surface. With femtosecond laser irradiation at different laser parameters, the water contact angle (WCA) on polystyrene's surface can be modified to either 12.7° or 156.2° from its original WCA of 88.2°. With properly spaced micro-pits created, the surface became hydrophilic probably due to the spread of the water droplets into the micro-pits. While with properly spaced micro-grooves created, the surface became rough and more hydrophobic. We investigated the effect of laser parameters on WCAs and analyzed the laser-treated surface roughness, profiles and chemical bonds by surface profilometer, scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). For the laser-treated surface with low roughness, the polar (such as C—O, C=O, and O—C=O bonds) and non-polar (such as C—C or C—H bonds) groups were found to be responsible for the wettability changes. While for a rough surface, the surface roughness or the surface topography structure played a more significant role in the changes of the surface WCA. The mechanisms involved in the laser surface wettability modification process were discussed.

Mode selection laser

DEFF Research Database (Denmark)

2014-01-01

spatial reflector variations, may be combined to generate a laser beam containing a plurality of orthogonal modes. The laser beam may be injected into a few- mode optical fiber, e.g. for the purpose of optical communication. The VCSEL may have intra-cavity contacts (31,37) and a Tunnel junction (33......) for current confinement into the active layer (34). An air-gap layer (102) may be provided between the upper reflector (15) and the SOI wafer (50) acting as a substrate. The lower reflector may be designed as a high-contrast grating (51) by etching....

Laser surface texturing of tool steel: textured surfaces quality evaluation

Science.gov (United States)

Šugár, Peter; Šugárová, Jana; Frnčík, Martin

2016-05-01

In this experimental investigation the laser surface texturing of tool steel of type 90MnCrV8 has been conducted. The 5-axis highly dynamic laser precision machining centre Lasertec 80 Shape equipped with the nano-second pulsed ytterbium fibre laser and CNC system Siemens 840 D was used. The planar and spherical surfaces first prepared by turning have been textured. The regular array of spherical and ellipsoidal dimples with a different dimensions and different surface density has been created. Laser surface texturing has been realized under different combinations of process parameters: pulse frequency, pulse energy and laser beam scanning speed. The morphological characterization of ablated surfaces has been performed using scanning electron microscopy (SEM) technique. The results show limited possibility of ns pulse fibre laser application to generate different surface structures for tribological modification of metallic materials. These structures were obtained by varying the processing conditions between surface ablation, to surface remelting. In all cases the areas of molten material and re-cast layers were observed on the bottom and walls of the dimples. Beside the influence of laser beam parameters on the machined surface quality during laser machining of regular hemispherical and elipsoidal dimple texture on parabolic and hemispherical surfaces has been studied.

Directivity patterns and pulse profiles of ultrasound emitted by laser action on interface between transparent and opaque solids: Analytical theory

International Nuclear Information System (INIS)

Nikitin, Sergey M.; Tournat, Vincent; Chigarev, Nikolay; Castagnede, Bernard; Gusev, Vitalyi; Bulou, Alain; Zerr, Andreas

2014-01-01

The analytical theory for the directivity patterns of ultrasounds emitted from laser-irradiated interface between two isotropic solids is developed. It is valid for arbitrary combinations of transparent and opaque materials. The directivity patterns are derived both in two-dimensional and in three-dimensional geometries, by accounting for the specific features of the sound generation by the photo-induced mechanical stresses distributed in the volume, essential in the laser ultrasonics. In particular, the theory accounts for the contribution to the emitted propagating acoustic fields from the converted by the interface evanescent photo-generated compression-dilatation waves. The precise analytical solutions for the profiles of longitudinal and shear acoustic pulses emitted in different directions are proposed. The developed theory can be applied for dimensional scaling, optimization, and interpretation of the high-pressure laser ultrasonics experiments in diamond anvil cell

Modelling optical fibers acquisition and transmission systems for their use in nuclear environments

International Nuclear Information System (INIS)

Van-Uffelen, Marco

2001-01-01

In order to introduce connections based on optical fibres in the field of civil nuclear activities, it is important to have a good knowledge of their behaviour under irradiation. The objective of this research thesis is thus to develop a tool to predict the lifetime of such an optical connection which would allow a predictive maintenance. The adopted methodology relies on a modular approach and consists in the characterization of the behaviour of individual components under test conditions which are representative of addressed applications. Transfer functions are then chained to obtain the connection predictive model. Various components have been studied: mono- and multi-mode optical fibres, light-emitting diodes, vertical-cavity surface-emitting laser diodes (VCSEL), as well as Si and InGaAs sensors. These components have been submitted to a range of dose rates and cumulated dose under temperatures reaching 85 C. Based on on-line measurements, a pragmatic approach has been assessed to predict the evolution of optical losses induced in optical fibres during several months. The difference between measurements and predictions ranges between 10 and 20 per cent depending on the fibre type and on the wavelength. VCSELs display a high tolerance to gamma radiation and a steady operation at high temperatures, whereas sensors appear to be the weakest link [fr

Flip-chip bonded optoelectronic integration based on ultrathin silicon (UTSi) CMOS

Science.gov (United States)

Hong, Sunkwang; Ho, Tawei; Zhang, Liping; Sawchuk, Alexander A.

2003-06-01

We describe the design and test of flip-chip bonded optoelectronic CMOS devices based on Peregrine Semiconductor's 0.5 micron Ultra-Thin Silicon on sapphire (UTSi) technology. The UTSi process eliminates the substrate leakage that typically results in crosstalk and reduces parasitic capacitance to the substrate, providing many benefits compared to bulk silicon CMOS. The low-loss synthetic sapphire substrate is optically transparent and has a coefficient of thermal expansion suitable for flip-chip bonding of vertical cavity surface emitting lasers (VCSELs) and detectors. We have designed two different UTSi CMOS chips. One contains a flip-chip bonded 1 x 4 photodiode array, a receiver array, a double edge triggered D-flip flop-based 2047-pattern pseudo random bit stream (PRBS) generator and a quadrature-phase LC-voltage controlled oscillator (VCO). The other chip contains a flip-chip bonded 1 x 4 VCSEL array, a driver array based on high-speed low-voltage differential signals (LVDS) and a full-balanced differential LC-VCO. Each VCSEL driver and receiver has individual input and bias voltage adjustments. Each UTSi chip is mounted on different printed circuit boards (PCBs) which have holes with about 1 mm radius for optical output and input paths through the sapphire substrate. We discuss preliminary testing of these chips.

Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures

International Nuclear Information System (INIS)

Egorov, A. Yu.; Karachinsky, L. Ya.; Novikov, I. I.; Babichev, A. V.; Berezovskaya, T. N.; Nevedomskiy, V. N.

2015-01-01

It is shown that metamorphic In 0.3 Ga 0.7 As/In 0.3 Al 0.7 As distributed Bragg reflectors (DBRs) with a reflection band at 1440–1600 nm and a reflectance of no less than 0.999 can be fabricated by molecular beam epitaxy (MBE) on a GaAs substrate. It is demonstrated that mesa structures formed from metamorphic DBRs on a GaAs substrate can be regrown by MBE and microcavities can be locally formed in two separate epitaxial processes. The results obtained can find wide application in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction

Energy-efficient VCSEL-based multiGigabit IR-UWB over Fiber with Airlink Transmission System

DEFF Research Database (Denmark)

Rodes Lopez, Roberto; Pham, Tien Thang; Jensen, Jesper Bevensee

2010-01-01

We propose VCSEL based impulse-radio ultrawideband technology for energy efficient high-speed wireless networks; with full passive signal distribution, from the central office to the home with high-speed wireless connection to the final user.......We propose VCSEL based impulse-radio ultrawideband technology for energy efficient high-speed wireless networks; with full passive signal distribution, from the central office to the home with high-speed wireless connection to the final user....

Experimental Investigations of 3-D-/4-D-CAP Modulation With Directly Modulated VCSELs

DEFF Research Database (Denmark)

Binti Othman, Maisara; Zhang, Xu; Deng, Lei

2012-01-01

correction limit of 2.8 × 10-3 for error-free reception is achieved after 20 km of SSMF transmission. Spectral efficiencies of 2.68 and 2.08 b/s/Hz are reported for 3-D-CAP and 4-D-CAP, respectively. We believe that multidimensional modulation formats represent an attractive solution for providing more......In this letter, we present experimental investigations of multidimensional multilevel carrierless amplitude phase (CAP) modulation with directly modulated vertical cavity surface-emitting lasers. The signals are transmitted over 20 km of standard single-mode fiber (SSMF). For multilevel 3-D...

Vcsel structure

DEFF Research Database (Denmark)

2015-01-01

.5, and wherein an index of refraction of low-index sections of the grating structure is less than 2. The core grating region defines a projection in a direction normal to the grating layer. The grating reflector further comprises a cap layer abutting the grating layer, and an index of refraction of the cap layer...... within the projection of the core grating region onto the cap layer is at least 2.5, and within the projection of the core grating region, the cap layer is abutted by a first solid dielectric low-index layer, an index of refraction of the first low-index layer or air being less than 2; and within...... the projection of the core grating region, the grating layer is also abutted by a second low-index layer and/or by air, an index of refraction of the second low-index layer or air being less than 2. The VCSEL structure furthermore comprises a first reflector and an active region for providing a cavity...

Hot-electron surface retention in intense short-pulse laser-matter interactions.

Science.gov (United States)

Mason, R J; Dodd, E S; Albright, B J

2005-07-01

Implicit hybrid plasma simulations predict that a significant fraction of the energy deposited into hot electrons can be retained near the surface of targets with steep density gradients illuminated by intense short-pulse lasers. This retention derives from the lateral transport of heated electrons randomly emitted in the presence of spontaneous magnetic fields arising near the laser spot, from geometric effects associated with a small hot-electron source, and from E fields arising in reaction to the ponderomotive force. Below the laser spot hot electrons are axially focused into a target by the B fields, and can filament in moderate Z targets by resistive Weibel-like instability, if the effective background electron temperature remains sufficiently low. Carefully engineered use of such retention in conjunction with ponderomotive density profile steepening could result in a reduced hot-electron range that aids fast ignition. Alternatively, such retention may disturb a deeper deposition needed for efficient radiography and backside fast ion generation.

In vitro performance of DIAGNOdent laser fluorescence device for dental calculus detection on human tooth root surfaces.

Science.gov (United States)

Rams, Thomas E; Alwaqyan, Abdulaziz Y

2017-10-01

This study assessed the reproducibility of a red diode laser device, and its capability to detect dental calculus in vitro on human tooth root surfaces. On each of 50 extracted teeth, a calculus-positive and calculus-free root surface was evaluated by two independent examiners with a low-power indium gallium arsenide phosphide diode laser (DIAGNOdent) fitted with a periodontal probe-like sapphire tip and emitting visible red light at 655 nm wavelength. Laser autofluorescence intensity readings of examined root surfaces were scored on a 0-99 scale, with duplicate assessments performed using the laser probe tip directed both perpendicular and parallel to evaluated tooth root surfaces. Pearson correlation coefficients of untransformed measurements, and kappa analysis of data dichotomized with a >40 autofluorescence intensity threshold, were calculated to assess intra- and inter-examiner reproducibility of the laser device. Mean autofluorescence intensity scores of calculus-positive and calculus-free root surfaces were evaluated with the Student's t -test. Excellent intra- and inter-examiner reproducibility was found for DIAGNOdent laser autofluorescence intensity measurements, with Pearson correlation coefficients above 94%, and kappa values ranging between 0.96 and 1.0, for duplicate readings taken with both laser probe tip orientations. Significantly higher autofluorescence intensity values were measured when the laser probe tip was directed perpendicular, rather than parallel, to tooth root surfaces. However, calculus-positive roots, particularly with calculus in markedly-raised ledges, yielded significantly greater mean DIAGNOdent laser autofluorescence intensity scores than calculus-free surfaces, regardless of probe tip orientation. DIAGNOdent autofluorescence intensity values >40 exhibited a stronger association with calculus (36.6 odds ratio) then measurements of ≥5 (20.1 odds ratio) when the laser probe tip was advanced parallel to root surfaces. Excellent

Single-photon emission at a rate of 143 MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser

Energy Technology Data Exchange (ETDEWEB)

Schlehahn, A.; Gschrey, M.; Schnauber, P.; Schulze, J.-H.; Rodt, S.; Strittmatter, A.; Heindel, T., E-mail: tobias.heindel@tu-berlin.de; Reitzenstein, S. [Institut für Festkörperphysik, Technische Universität Berlin, Berlin 10623 (Germany); Gaafar, M.; Vaupel, M.; Stolz, W.; Rahimi-Iman, A.; Koch, M. [Department of Physics and Materials Science Center, Philipps-Universität Marburg, 35032 Marburg (Germany)

2015-07-27

We report on the realization of a quantum dot (QD) based single-photon source with a record-high single-photon emission rate. The quantum light source consists of an InGaAs QD which is deterministically integrated within a monolithic microlens with a distributed Bragg reflector as back-side mirror, which is triggered using the frequency-doubled emission of a mode-locked vertical-external-cavity surface-emitting laser (ML-VECSEL). The utilized compact and stable laser system allows us to excite the single-QD microlens at a wavelength of 508 nm with a pulse repetition rate close to 500 MHz at a pulse width of 4.2 ps. Probing the photon statistics of the emission from a single QD state at saturation, we demonstrate single-photon emission of the QD-microlens chip with g{sup (2)}(0) < 0.03 at a record-high single-photon flux of (143 ± 16) MHz collected by the first lens of the detection system. Our approach is fully compatible with resonant excitation schemes using wavelength tunable ML-VECSELs, which will optimize the quantum optical properties of the single-photon emission in terms of photon indistinguishability.

700 W blue fiber-coupled diode-laser emitting at 450 nm

Science.gov (United States)

Balck, A.; Baumann, M.; Malchus, J.; Chacko, R. V.; Marfels, S.; Witte, U.; Dinakaran, D.; Ocylok, S.; Weinbach, M.; Bachert, C.; Kösters, A.; Krause, V.; König, H.; Lell, A.; Stojetz, B.; Löffler, A.; Strauss, U.

2018-02-01

A high-power blue laser source was long-awaited for processing materials with low absorption in the near infrared (NIR) spectral range like copper or gold. Due to the huge progress of GaN-based semiconductors, the performance of blue diode-lasers has made a major step forward recently. With the availability of unprecedented power levels at cw-operating blue diode-lasers emitting at 450 nm, it was possible to set up a high-power diode-laser in the blue spectral range to address these conventional laser applications and probably beyond that to establish completely new utilizations for lasers. Within the scope of the research project "BlauLas", funded within the German photonic initiative "EFFILAS" [8] by the German Federal Ministry of Education and Research (BMBF), Laserline in cooperation with OSRAM aims to realize a cw fiber-coupled diode-laser exceeding 1 kW blue laser power. In this paper the conceptual design and experimental results of a 700 W blue fiber-coupled diode-laser are presented. Initially a close look had to be taken on the mounting techniques of the semiconductors to serve the requirements of the GaN laser diodes. Early samples were used for extensive long term tests to investigate degradation processes. With first functional laser-modules we set up fiber-coupled laser-systems for further testing. Besides adaption of well-known optical concepts a main task within the development of the laser system was the selection and examination of suitable materials and assembling in order to minimize degradation and reach adequate lifetimes. We realized R&D blue lasersystems with lifetimes above 5,000 h, which enable first application experiments on processing of various materials as well as experiments on conversion to white-light.

First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

KAUST Repository

Majid, Mohammed Abdul; Al-Jabr, Ahmad; Oubei, Hassan M.; Alias, Mohd Sharizal; Anjum, Dalaver H.; Ng, Tien Khee; Ooi, Boon S.

2015-01-01

The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46

X-ray spectrum emitted by a laser-produced cerium plasma in the 7.5 to 12 A wavelength range

International Nuclear Information System (INIS)

Doron, R.; Behar, E.; Fraenkel, M.; Mandelbaum, P.; Schwob, J.L.; Zigler, A.

2001-01-01

A highly stripped cerium (Z = 58) plasma is produced by irradiating a solid cerium target with an intense short laser pulse. The X-ray spectrum emitted from the plasma is recorded in the 7.5-12 A wavelength range using a flat RAP crystal spectrometer. Ab-initio calculations using the RELAC relativistic computer code, as well as isoelectronic trends deduced from previous works, together with spectra obtained under different laser beam focusing conditions, are all employed for the identification of the spectral lines and features emitted by various ions from Fe-like Ce 32+ to As-like Ce 25+ . The technique of comparing spectra obtained using different laser intensities is also employed to confirm or to resolve some ambiguous identifications of spectral features in the spectrum of a laser-produced lanthanum plasma studied in a previous work. (orig.)

X-ray spectrum emitted by a laser-produced cerium plasma in the 7.5 to 12 A wavelength range

Energy Technology Data Exchange (ETDEWEB)

Doron, R.; Behar, E.; Fraenkel, M.; Mandelbaum, P.; Schwob, J.L.; Zigler, A. [Hebrew Univ., Jerusalem (Israel). Racah Inst. of Physics; Faenov, A.Ya.; Pikuz, T.A. [Multicharged Ion Spectra Data Center, VNIIFTRI, Mendeleevo (Russian Federation)

2001-01-01

A highly stripped cerium (Z = 58) plasma is produced by irradiating a solid cerium target with an intense short laser pulse. The X-ray spectrum emitted from the plasma is recorded in the 7.5-12 A wavelength range using a flat RAP crystal spectrometer. Ab-initio calculations using the RELAC relativistic computer code, as well as isoelectronic trends deduced from previous works, together with spectra obtained under different laser beam focusing conditions, are all employed for the identification of the spectral lines and features emitted by various ions from Fe-like Ce{sup 32+} to As-like Ce{sup 25+}. The technique of comparing spectra obtained using different laser intensities is also employed to confirm or to resolve some ambiguous identifications of spectral features in the spectrum of a laser-produced lanthanum plasma studied in a previous work. (orig.)

Laser device and method

International Nuclear Information System (INIS)

Myers, J.D.

1986-01-01

A method is described of treatment of opacity of the lens of an eye resulting from foreign matter at the back surface of the eye lens within the vitreous fluid body of the eye with a passively Q-switched laser device. The method consists of: (a) generating a single lasing pulse emitted from the laser device focused within the eye vitreous fluid body, spaced from the lens back surface, creating a microplasma dot in the vitreous fluid body (b) then increasing the frequency of the lasing pulses emitted from the lasing device having a frequency greater than the life of the microplasma to generate an elongated lasing plasma within the eye vitreous fluid moving toward the lens back surface, until the elongated lasing plasma contacts and destroys the foreign matter

First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

KAUST Repository

Majid, Mohammed Abdul

2015-06-26

The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.

Sub-micrometric surface texturing of AZ31 Mg-alloy through two-beam direct laser interference patterning with a ns-pulsed green fiber laser

Science.gov (United States)

Furlan, Valentina; Biondi, Marco; Demir, Ali Gökhan; Pariani, Giorgio; Previtali, Barbara; Bianco, Andrea

2017-11-01

Two-beam direct laser interference patterning (DLIP) is the method that employs two beams and provides control over the pattern geometry by regulating the angle between the beams and the wavelength of the beam. Despite the simplistic optical arrangement required for the method, the feasibility of sub-micrometric patterning of a surface depends on the correct manipulation of the process parameters, especially in the case of metallic materials. Magnesium alloys, from this point of view, exhibit further difficulty in processability due to low melting point and high reactivity. With biocompatibility and biodegradability features, Mg-alloy implants can take further advantage of surface structuring for tailoring the biological behaviour. In this work, a two-beam DLIP setup has been developed employing an industrial grade nanosecond-pulsed fiber laser emitting at 532 nm. The high repetition rate and ramped pulse profile provided by the laser were exploited for a more flexible control over the energy content deposited over the heat-sensitive Mg-alloy. The paper describes the strategies developed for controlling ramped laser emission at 20 kHz repetition rate. The process feasibility window was assessed within a large range of parameters. Within the feasibility window, a complete experimental plan was applied to investigate the effect of main laser process parameters on the pattern dimensions. Periodic surface structures with good definition down to 580 nm ± 20 nm spacing were successfully produced.

8-dimensional lattice optimized formats in 25-GBaud/s VCSEL based IM/DD optical interconnections

DEFF Research Database (Denmark)

Lu, Xiaofeng; Tafur Monroy, Idelfonso

2015-01-01

Temporally combined 4- and 8-dimensional lattice grids optimized modulation formats for VCSEL based IM/DD short-reach optical inter-connections has been proposed and investigated numerically together with its conventional counterpart PAM-4. © 2015 OSA.......Temporally combined 4- and 8-dimensional lattice grids optimized modulation formats for VCSEL based IM/DD short-reach optical inter-connections has been proposed and investigated numerically together with its conventional counterpart PAM-4. © 2015 OSA....

Full C-band Tunable MEMS-VCSEL for Next Generation G.metro Mobile Front- and Backhauling

DEFF Research Database (Denmark)

Wagner, Christoph; Zou, Shihuan Jim; Ortsiefer, Markus

2017-01-01

We report full C-band tunable, 10 Gbit/s capability, directly modulated MEMS-VCSEL for next generation converged mobile fronthaul and backhaul applications. Bit error rates below 10(-9) were achieved over up to 40 km SSMF.......We report full C-band tunable, 10 Gbit/s capability, directly modulated MEMS-VCSEL for next generation converged mobile fronthaul and backhaul applications. Bit error rates below 10(-9) were achieved over up to 40 km SSMF....

Surface plasmon quantum cascade lasers as terahertz local oscillators.

Science.gov (United States)

Hajenius, M; Khosropanah, P; Hovenier, J N; Gao, J R; Klapwijk, T M; Barbieri, S; Dhillon, S; Filloux, P; Sirtori, C; Ritchie, D A; Beere, H E

2008-02-15

We characterize a heterodyne receiver based on a surface-plasmon waveguide quantum cascade laser (QCL) emitting at 2.84 THz as a local oscillator, and an NbN hot electron bolometer as a mixer. We find that the envelope of the far-field pattern of the QCL is diffraction-limited and superimposed onto interference fringes, which are similar to those found in narrow double-metal waveguide QCLs. Compared to the latter, a more directional beam allows for better coupling of the radiation power to the mixer. We obtain a receiver noise temperature of 1050 K when the mixer is at 2 K, which, to our knowledge, is the highest sensitivity reported at frequencies beyond 2.5 THz.

Fabrication of periodical surface structures by picosecond laser irradiation of carbon thin films: transformation of amorphous carbon in nanographite

Energy Technology Data Exchange (ETDEWEB)

Popescu, C.; Dorcioman, G. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, Magurele RO-077125 (Romania); Bita, B. [National Institute for Research and Development in Microtechnologies, 126A Erou Iancu Nicolae Street, Voluntari RO-077190 (Romania); Faculty of Physics, 405 Atomistilor Street, Magurele RO-077125 (Romania); Besleaga, C.; Zgura, I. [National Institute of Materials Physics, 105bis Atomistilor Street, Magurele RO-077125 (Romania); Himcinschi, C. [Institute of Theoretical Physics, TU Bergakademie Freiberg, Freiberg D-09596 (Germany); Popescu, A.C., E-mail: andrei.popescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, Magurele RO-077125 (Romania)

2016-12-30

Highlights: • Ripples obtained on carbon films after irradiation with visible ps laser pulses. • Amorphous carbon was transformed in nanographite following irradiation. • Ripples had a complex morphology, being made of islands of smaller ripples. • Hydrophilic carbon films became hydrophobic after surface structuring. - Abstract: Thin films of carbon were synthesized by ns pulsed laser deposition in vacuum on silicon substrates, starting from graphite targets. Further on, the films were irradiated with a picosecond laser source emitting in visible at 532 nm. After tuning of laser parameters, we obtained a film surface covered by laser induced periodical surface structures (LIPSS). They were investigated by optical, scanning electron and atomic force microscopy. It was observed that changing the irradiation angle influences the LIPSS covered area. At high magnification it was revealed that the LIPSS pattern was quite complex, being composed of other small LIPSS islands, interconnected by bridges of nanoparticles. Raman spectra for the non-irradiated carbon films were typical for a-C type of diamond-like carbon, while the LIPSS spectra were characteristic to nano-graphite. The pristine carbon film was hydrophilic, while the LIPSS covered film surface was hydrophobic.

Laser marking method and device

International Nuclear Information System (INIS)

Okazaki, Yuki; Aoki, Nobutada; Mukai, Narihiko; Sano, Yuji; Yamamoto, Seiji.

1997-01-01

An object is disposed in laser beam permeating liquid or gaseous medium. Laser beams such as CW laser or pulse laser oscillated from a laser device are emitted to the object to apply laser markings with less degradation of identification and excellent corrosion resistance on the surface of the object simply and easily. Upon applying the laser markings, a liquid or gas as a laser beam permeating medium is blown onto the surface of the object, or the liquid or gas in the vicinity of the object is sucked, the laser beam-irradiated portion on the surface can be cooled positively. Accordingly, the laser marking can be formed on the surface of the object with less heat affection to the object. In addition, if the content of a nitrogen gas in the laser beam permeating liquid medium is reduced by degassing to lower than a predetermined value, or the laser beam permeating gaseous medium is formed by an inert gas, a laser marking having high corrosion resistance and reliability can be formed on the surface of the objective member. (N.H.)

MOVPE growth and characterization of (In,Ga)N quantum structures for laser diodes emitting at 440 nm

Energy Technology Data Exchange (ETDEWEB)

Hoffmann, Veit

2011-04-18

The presented work describes the metal organic vapor phase epitaxy and characterization of nitride-based quantum structures which are used in laser heterostructures emitting in the wavelength range between 400 nm and 440 nm. Aiming at current injection and optically pumped laser structures with low threshold current or respectively threshold power densities, the device properties were correlated with the material properties of the indium gallium nitride (InGaN) active region. Furthermore, the influence of the active region and waveguide heterostructure layout on the material gain as well as the modal gain was investigated. In order to understand the InGaN growth process and the formation of structural imperfections, 15 nm-100 nm thick InGaN single layers were deposited on gallium nitride (GaN) on sapphire substrates and analyzed subsequently. It turned out that the spiral pattern of the growth edges around screw dislocations, threading from the substrate to the growth surface, and the formation of additional V-shaped surface defects are the main cause for the deterioration of the crystal perfection of the InGaN. As a result of the transition from a layer-by-layer to a 3D growth regime stable facets with preferred indium incorporation are formed that increase the lateral variation of the indium mole fraction in the layer. The higher indium incorporation at the facets is explained by dynamical elasticity theory and proven by the growth and characterization of InGaN layers on differently oriented GaN. The material properties of the InGaN quantum wells were correlated with laser device properties using 400 nm laser structures: In the case of thin quantum wells the 3D growth results in a lateral variation of the band gap due to variations of the indium mole fraction and the well width. Systematical investigations of laser structures with different band gap fluctuations show an increase of the threshold power density as the lateral variation of the band gap increases. It

Surface Finish after Laser Metal Deposition

Science.gov (United States)

Rombouts, M.; Maes, G.; Hendrix, W.; Delarbre, E.; Motmans, F.

Laser metal deposition (LMD) is an additive manufacturing technology for the fabrication of metal parts through layerwise deposition and laser induced melting of metal powder. The poor surface finish presents a major limitation in LMD. This study focuses on the effects of surface inclination angle and strategies to improve the surface finish of LMD components. A substantial improvement in surface quality of both the side and top surfaces has been obtained by laser remelting after powder deposition.

Detecting Latent Prints on Stone and Other Difficult Porous Surfaces via Indanedione/Zinc Chloride and Laser

Directory of Open Access Journals (Sweden)

Shiquan LIU

2016-01-01

Full Text Available Lasers and alternate light sources have been recognized as effective tools for latent print detection for over three decades. Luminescence often increases friction ridge contrast to reveal impressions otherwise undetectable. Indanedione/zinc chloride excited by a forensic light source is widely recognized as an effective process for developing latent prints on porous surfaces. This study was designed to evaluate the use of a combination of luminescence excitation and indanedione with zinc chloride to detect latent prints on stones, bricks, and similar difficult porous surfaces. The wavelengths evaluated included 400 nm (violet, 447 nm (blue, 532 nm (green, and 645 nm (red. Latent prints were deposited on a variety of porous surfaces including bricks, cement stones, wood, and cotton fabric, all commonly encountered at crime scenes in China. The surfaces were examined using white light (light-emitting diode flashlight and laser light sources separately, both before and after treatment with indanedione/zinc chloride. The goal of this study was to evaluate various light sources for their effectiveness in detecting impressions developed by indanedione/zinc chloride on difficult porous surfaces. Results indicated that latent prints on some brick and cement stone surfaces may be effectively detected using 532 nm laser excitation after indanedione/zinc chloride processing.

Diode-laser pumping into the emitting level for efficient lasing of depressed cladding waveguides realized in Nd:YVO4 by the direct femtosecond-laser writing technique.

Science.gov (United States)

Pavel, Nicolaie; Salamu, Gabriela; Jipa, Florin; Zamfirescu, Marian

2014-09-22

Depressed cladding waveguides have been realized in Nd:YVO(4) employing direct writing technique with a femtosecond-laser beam. It was shown that the output performances of such laser devices are improved by the reduction of the quantum defect between the pump wavelength and the laser wavelength. Thus, under the classical pump at 808 nm (i.e. into the (4)F(5/2) level), a 100-μm diameter circular waveguide inscribed in a 0.7-at.% Nd:YVO(4) outputted 1.06-μm laser pulses with 3.0-mJ energy, at 0.30 optical efficiency and slope efficiency of 0.32. The pump at 880 nm (i.e.directly into the (4)F(3/2) emitting level) increased the pulse energy at 3.8 mJ and improved both optical efficiency and slope efficiency at 0.36 and 0.39, respectively. The same waveguide yielded continuous-wave 1.5-W output power at 1.06 μm under the pump at 880 nm. Laser emission at 1.34 μm was also improved using the pump into the (4)F(3/2) emitting level of Nd:YVO(4).

Guiding of Long-Distance Electric Discharges by Combined Femtosecond and Nanosecond Pulses Emitted by Hybrid KrF Laser System

Science.gov (United States)

2014-01-30

laser pulse initiated HV discharge with a time delay of tens nanoseconds – evidently it is developing due to an avalanche -like growth of electron...AFRL-AFOSR-UK-TR-2014-0040 Guiding of long-distance electric discharges by combined femtosecond and nanosecond pulses emitted by...and guiding electric discharge , KrF laser, femtosecond pulse , nanosecond pulse , filamentation, plasma channel, lightning control, laser control of

1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area

Energy Technology Data Exchange (ETDEWEB)

Miah, M. J., E-mail: jarez.miah@tu-berlin.de; Posilovic, K.; Kalosha, V. P.; Rosales, R.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Kettler, T. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); PBC Lasers GmbH, Hardenbergstr. 36, 10623 Berlin (Germany); Skoczowsky, D. [PBC Lasers GmbH, Hardenbergstr. 36, 10623 Berlin (Germany); Pohl, J.; Weyers, M. [Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

2014-10-13

High-brightness edge-emitting semiconductor lasers having a vertically extended waveguide structure emitting in the 1060 nm range are investigated. Ridge waveguide (RW) lasers with 9 μm stripe width and 2.64 mm cavity length yield highest to date single transverse mode output power for RW lasers in the 1060 nm range. The lasers provide 1.9 W single transverse mode optical power under continuous-wave (cw) operation with narrow beam divergences of 9° in lateral and 14° (full width at half maximum) in vertical direction. The beam quality factor M{sup 2} is less than 1.9 up to 1.9 W optical power. A maximum brightness of 72 MWcm{sup −2}sr{sup −1} is obtained. 100 μm wide and 3 mm long unpassivated broad area lasers provide more than 9 W optical power in cw operation.

Optical data transmission ASICs for the high-luminosity LHC (HL-LHC) experiments

International Nuclear Information System (INIS)

Li, X; Huang, G; Sun, X; Liu, G; Deng, B; Gong, D; Guo, D; Liu, C; Liu, T; Xiang, A C; Ye, J; Zhao, X; Chen, J; You, Y; He, M; Hou, S; Teng, P-K; Jin, G; Liang, H; Liang, F

2014-01-01

We present the design and test results of two optical data transmission ASICs for the High-Luminosity LHC (HL-LHC) experiments. These ASICs include a two-channel serializer (LOCs2) and a single-channel Vertical Cavity Surface Emitting Laser (VCSEL) driver (LOCld1V2). Both ASICs are fabricated in a commercial 0.25-μm Silicon-on-Sapphire (SoS) CMOS technology and operate at a data rate up to 8 Gbps per channel. The power consumption of LOCs2 and LOCld1V2 are 1.25 W and 0.27 W at 8-Gbps data rate, respectively. LOCld1V2 has been verified meeting the radiation-tolerance requirements for HL-LHC experiments

Laser surface modification of PEEK

Energy Technology Data Exchange (ETDEWEB)

Riveiro, A., E-mail: ariveiro@uvigo.es [Applied Physics Department, University of Vigo ETSII, Lagoas-Marcosende, 9, Vigo 36310 (Spain); Centro Universitario de la Defensa, Escuela Naval Militar, Plaza de Espana 2, 36920 Marin (Spain); Soto, R.; Comesana, R.; Boutinguiza, M.; Val, J. del; Quintero, F.; Lusquinos, F.; Pou, J. [Applied Physics Department, University of Vigo ETSII, Lagoas-Marcosende, 9, Vigo 36310 (Spain)

2012-09-15

Highlights: Black-Right-Pointing-Pointer Role of laser irradiation wavelength on the surface modification of PEEK (polyether-ether-ketone) was investigated. Black-Right-Pointing-Pointer Adequate processing conditions to improve wettability, roughness, and cell adhesion characteristics are determined. Black-Right-Pointing-Pointer A design of experiments (DOE) methodology was performed. Black-Right-Pointing-Pointer UV (355 nm) radiation is the most promising laser radiation for improving the adhesive surface properties of PEEK. - Abstract: Polyether-ether-ketone (PEEK) is a synthetic thermoplastic polymer with excellent mechanical and chemical properties, which make it attractive for the field of reconstructive surgery. Nevertheless, this material has a poor interfacial biocompatibility due to its large chemical stability which induces poor adhesive bonding properties. The possibilities of enhancing the PEEK adhesive properties by laser treatments have been explored in the past. This paper presents a systematic approach to discern the role of laser irradiation wavelength on the surface modification of PEEK under three laser wavelengths ({lambda} = 1064, 532, and 355 nm) with the aim to determine the most adequate processing conditions to increase the roughness and wettability, the main parameters affecting cell adhesion characteristics of implants. Overall results show that the ultraviolet ({lambda} = 355 nm) laser radiation is the most suitable one to enhance surface wettability of PEEK.

Radiation emitting devices regulations

International Nuclear Information System (INIS)

1970-01-01

The Radiation Emitting Devices Regulations are the regulations referred to in the Radiation Emitting Devices Act and relate to the operation of devices. They include standards of design and construction, standards of functioning, warning symbol specifications in addition to information relating to the seizure and detention of machines failing to comply with the regulations. The radiation emitting devices consist of the following: television receivers, extra-oral dental x-ray equipment, microwave ovens, baggage inspection x-ray devices, demonstration--type gas discharge devices, photofluorographic x-ray equipment, laser scanners, demonstration lasers, low energy electron microscopes, high intensity mercury vapour discharge lamps, sunlamps, diagnostic x-ray equipment, ultrasound therapy devices, x-ray diffraction equipment, cabinet x-ray equipment and therapeutic x-ray equipment

A high-energy, low-threshold tunable intracavity terahertz-wave parametric oscillator with surface-emitted configuration

International Nuclear Information System (INIS)

Wang, Y Y; Xu, D G; Jiang, H; Zhong, K; Yao, J Q

2013-01-01

A high-energy, low-threshold THz-wave output has been experimentally demonstrated with an intracavity terahertz-wave parametric oscillator based on a surface-emitted configuration, which was pumped by a diode-side-pumped Q-switched Nd:YAG laser. Different beam sizes and repetition rates of the pump light have been investigated for high-energy and high-efficiency THz-wave generation. The maximum THz-wave output energy of 283 nJ/pulse was obtained at 1.54 THz under an intracavity 1064 nm pump energy of 59 mJ. The conversion efficiency was 4.8 × 10 −6 , corresponding to a photon conversion efficiency of 0.088%. The pump threshold was 12.9 mJ/pulse. A continuously tunable range from 0.75 to 2.75 THz was realized. (paper)

Laser Surface Treatment of Sintered Alumina

Science.gov (United States)

Hagemann, R.; Noelke, C.; Kaierle, S.; Wesling, V.

Sintered alumina ceramics are used as refractory materials for industrial aluminum furnaces. In this environment the ceramic surface is in permanent contact with molten aluminum resulting in deposition of oxidic material on its surface. Consequently, a lower volume capacity as well as thermal efficiency of the furnaces follows. To reduce oxidic adherence of the ceramic material, two laser-based surface treatment processes were investigated: a powder- based single-step laser cladding and a laser surface remelting. Main objective is to achieve an improved surface quality of the ceramic material considering the industrial requirements as a high process speed.

Active inductor shunt peaking in high-speed VCSEL driver design

CERN Document Server

Liang, Futian; Hou, Suen; Liu, Chonghan; Liu, Tiankuan; Su, Da-Shung; Teng, Ping-Kun; Xiang, Annie; Ye, Jingbo; Jin, Ge

2013-01-01

An all transistor active inductor shunt peaking structure has been used in a prototype of 8-Gbps high-speed VCSEL driver which is designed for the optical link in ATLAS liquid Argon calorimeter upgrade. The VCSEL driver is fabricated in a commercial 0.25-um Silicon-on-Sapphire (SoS) CMOS process for radiation tolerant purpose. The all transistor active inductor shunt peaking is used to overcome the bandwidth limitation from the CMOS process. The peaking structure has the same peaking effect as the passive one, but takes a small area, does not need linear resistors and can overcome the process variation by adjust the peaking strength via an external control. The design has been tapped out, and the prototype has been proofed by the preliminary electrical test results and bit error ratio test results. The driver achieves 8-Gbps data rate as simulated with the peaking. We present the all transistor active inductor shunt peaking structure, simulation and test results in this paper.

Effect of KrF excimer laser irradiation on the surface changes and photoelectric properties of ZnO single crystal

Energy Technology Data Exchange (ETDEWEB)

Zeng, Yong [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Beijing Engineering Research Center of 3D Printing for Digital Medical Health, Beijing International Cooperation Base of 3D Printing for Digital MedicalHealth, Beijing University of Technology, Beijing 100124 (China); Zhao, Yan [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Jiang, Yijian, E-mail: yjjiang@bjut.edu.cn [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Beijing Engineering Research Center of 3D Printing for Digital Medical Health, Beijing International Cooperation Base of 3D Printing for Digital MedicalHealth, Beijing University of Technology, Beijing 100124 (China)

2016-06-25

In this paper, the effect of KrF pulsed excimer laser irradiation on the structural, surface morphology, photoluminescence and electrical properties of ZnO single crystal was investigated. Compared to the as-grown sample, at an irradiation energy density of 257 mJ/cm{sup 2}, the ZnO single crystal exhibits a series of phenomenon: XRD and Raman results show that the crystallization of ZnO quality change slightly, resistivity is decreased by two orders of magnitude, carrier concentration is increased by one order of magnitude. After laser irradiation, the surface shows some strip lines and no cracks. Formula calculation and simulation results show that the stripes are not caused by surface melting. We speculate that these stripes are caused by the precipitation of ZnO material inside to the surface. Due to the reduction of oxygen vacancies, UV emission has been enhanced and visible emission has been declined after irradiation. After the laser irradiation, the visible light of ZnO surface can be regulated. The experimental results show that KrF laser irradiation could effectively improve the optical and electrical properties of ZnO single crystal, which is important for the application of high performance of emitting optoelectronic devices. - Highlights: • After laser irradiation, the surface shows some strip lines and no cracks. • The visible light of as-irradiated ZnO surface can be regulated to four colors. • The electrical properties of as-irradiated ZnO has been improved greatly.

Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors

KAUST Repository

Lee, Changmin; Shen, Chao; Cozzan, Clayton; Farrell, Robert M.; Speck, James S.; Nakamura, Shuji; Ooi, Boon S.; DenBaars, Steven P.

2017-01-01

Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021

Novel Cavities in Vertical External Cavity Surface Emitting Lasers for Emission in Broad Spectral Region by Means of Nonlinear Frequency Conversion

Science.gov (United States)

Lukowski, Michal L.

Optically pumped semiconductor vertical external cavity surface emitting lasers (VECSEL) were first demonstrated in the mid 1990's. Due to the unique design properties of extended cavity lasers VECSELs have been able to provide tunable, high-output powers while maintaining excellent beam quality. These features offer a wide range of possible applications in areas such as medicine, spectroscopy, defense, imaging, communications and entertainment. Nowadays, newly developed VECSELs, cover the spectral regions from red (600 nm) to around 5 microm. By taking the advantage of the open cavity design, the emission can be further expanded to UV or THz regions by the means of intracavity nonlinear frequency generation. The objective of this dissertation is to investigate and extend the capabilities of high-power VECSELs by utilizing novel nonlinear conversion techniques. Optically pumped VECSELs based on GaAs semiconductor heterostructures have been demonstrated to provide exceptionally high output powers covering the 900 to 1200 nm spectral region with diffraction limited beam quality. The free space cavity design allows for access to the high intracavity circulating powers where high efficiency nonlinear frequency conversions and wavelength tuning can be obtained. As an introduction, this dissertation consists of a brief history of the development of VECSELs as well as wafer design, chip fabrication and resonator cavity design for optimal frequency conversion. Specifically, the different types of laser cavities such as: linear cavity, V-shaped cavity and patented T-shaped cavity are described, since their optimization is crucial for transverse mode quality, stability, tunability and efficient frequency conversion. All types of nonlinear conversions such as second harmonic, sum frequency and difference frequency generation are discussed in extensive detail. The theoretical simulation and the development of the high-power, tunable blue and green VECSEL by the means of type I

Optically pumped lasing in single crystals of organometal halide perovskites prepared by cast-capping method

Energy Technology Data Exchange (ETDEWEB)

Nguyen, Van-Cao; Katsuki, Hiroyuki; Yanagi, Hisao, E-mail: yanagi@ms.naist.jp [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama, Ikoma, Nara 630-0192 (Japan); Sasaki, Fumio [Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

2016-06-27

A simple “cast-capping” method is adopted to prepare single-crystal perovskites of methyl ammonium lead bromide (CH{sub 3}NH{sub 3}PbBr{sub 3}). By capping a CH{sub 3}NH{sub 3}PbBr{sub 3} solution casted on one substrate with another substrate such as glass, mica, and distributed Bragg reflector (DBR), the slow evaporation of solvent enables large-size cubic crystals to grow between the two substrates. Under optical pumping, edge-emitting lasing is observed based on Fabry–Pérot resonation between parallel side facets of a strip-shaped crystal typically with a lateral cavity length of a few tens of μm. On the other hand, vertical-cavity surface-emitting lasing (VCSEL) is obtained from a planar crystal grown between two DBRs with a cavity thickness of a few μm. Simultaneous detection of those edge- and surface-emissions reveals that the threshold excitation fluence of VCSEL is higher than that of the edge-emitting lasing due to thickness gradient in the planar crystal.

High power cascade diode lasers emitting near 2 μm

Energy Technology Data Exchange (ETDEWEB)

Hosoda, Takashi; Feng, Tao; Shterengas, Leon, E-mail: leon.shterengas@stonybrook.edu; Kipshidze, Gela; Belenky, Gregory [State University of New York at Stony Brook, Stony Brook, New York 11794 (United States)

2016-03-28

High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumping scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.

Coherent Detection for 1550 nm, 5 Gbit/s VCSEL Based 40 km Bidirectional PON Transmission

DEFF Research Database (Denmark)

Jensen, Jesper Bevensee; Rodes Lopez, Roberto; Zibar, Darko

2011-01-01

Coherent detection of directly modulated 1550nm VCSELs in 5Gbit/s bidirectional 40km SSMF PON-links is presented. Receiver sensitivity of –37.3dBm after transmission is achieved with 30dB system margin, corresponding to 1:1024 passive powersplitting.......Coherent detection of directly modulated 1550nm VCSELs in 5Gbit/s bidirectional 40km SSMF PON-links is presented. Receiver sensitivity of –37.3dBm after transmission is achieved with 30dB system margin, corresponding to 1:1024 passive powersplitting....

Comparing 52 Gbps Duobinary and 4-PAM Transmission Over 100m OM-3 Fiber With 25GHz Class VCSELs

DEFF Research Database (Denmark)

Suhr, Lau Frejstrup; Lyubomirsky, Ilya; Daghighian, Henry M.

This paper compares VCSEL based transmission of 52 Gbps duobinary-NRZ and 4-PAM over 100m OM-3 fiber employing a linear equalizer in the receiver.......This paper compares VCSEL based transmission of 52 Gbps duobinary-NRZ and 4-PAM over 100m OM-3 fiber employing a linear equalizer in the receiver....

MIMO-OFDM WDM PON with DM-VCSEL for femtocells application

DEFF Research Database (Denmark)

Binti Othman, Maisara; Deng, Lei; Pang, Xiaodan

2011-01-01

We report on experimental demonstration of 2x2 MIMO-OFDM 5.6-GHz radio over fiber signaling over 20 km WDM-PON with directly modulated (DM) VCSELs for femtocells application. MIMO-OFDM algorithms effectively compensate for impairments in the wireless link. Error-free signal demodulation of 64...

Study on the GaAs(110) surface using emitted atom spectrometry

International Nuclear Information System (INIS)

Gayone, J.E.; Sanchez, E.A.; Grizzi, O.; Universidad Nacional de Cuyo, Mendoza

1998-01-01

The facilities implemented at Bariloche for the ion scattering spectrometry is described, and recent examples of the technique application to determine the atomic structure and the composition of metallic and semiconductor surfaces, pure and with different adsorbates. The surface analysis technique using emitted atom spectrometry is discussed. The sensitivity to the GaAs(110) surface atomic relaxation is presented, and the kinetic of hydrogen adsorption by the mentioned surface is studied

VCSEL Transmission at 10 Gb/s for 20 km Single Mode Fiber WDM-PON without Dispersion Compensation or Injection Locking

DEFF Research Database (Denmark)

Gibbon, Timothy Braidwood; Prince, Kamau; Pham, Tien Thang

2011-01-01

how off-center wavelength filtering of the VCSEL spectrum at an array waveguide grating can be used to mitigate the effect of chirp and the dispersion penalty. Transmission at 10Gb/s VCSEL over 23.6 km of single mode fiber is experimentally demonstrated, with a dispersion penalty of only 2.9 d......B. Simulated results are also presented which show that off-center wavelength filtering can extend the 10 Gb/s network reach from 11.7 km to 25.8 km for a 4 dB dispersion penalty. This allows for cheap and simple dispersion mitigation in next generation VCSEL based optical access networks....

Comparison of 850-nm and 1550-nm VCSELs for low-cost short-reach IM/DD and OFDM SMF/MMF links

DEFF Research Database (Denmark)

Karinou, Fotini; Deng, Lei; Rodes Lopez, Roberto

2013-01-01

In this paper, we experimentally compare the suitability of two VCSEL designs of different wavelength and technology as inexpensive, off-the-shelf transmitter components to enable low-cost and energy-efficient optical interconnects employing conventional (NRZ IM/DD) and advanced (OFDM) modulation....... In particular, we assess the performance of a multimode (MM) 850-nm and a single-mode (SM) 1550-nm VCSEL over 100 m/1 km of 50.7-μm diameter OM-4 MMF links and 100 m/5 km SMF links. OFDM-QPSK is investigated in order to substitute IM/DD in order to increase the capacity in the aforementioned VCSEL-based, MMF...

Surface morphology of laser superheated Pb(100)

Energy Technology Data Exchange (ETDEWEB)

Zhang, Z.H.; Lin, B.; Elsayed-Ali, H.E.

1999-11-01

The change in the surface vacancy density after heating of Pb(100) with {approximately}100 ps laser pulses is investigated using reflection high-energy electron diffraction. The surface vacancy density remains unchanged when the surface is superheated without melting. However, when the laser fluence is high enough to cause surface melting, the surface vacancy density increases. This increase in vacancy density is attributed to fast diffusion of atoms in the liquid film formed on Pb(100) during laser melting.

Excimer laser irradiation of metal surfaces

Science.gov (United States)

Kinsman, Grant

In this work a new method of enhancing CO2 laser processing by modifying the radiative properties of a metal surface is studied. In this procedure, an excimer laser (XeCl) or KrF) exposes the metal surface to overlapping pulses of high intensity, 10(exp 8) - 10(exp 9) W cm(exp -2), and short pulse duration, 30 nsec FWHM (Full Width Half Maximum), to promote structural and chemical change. The major processing effect at these intensities is the production of a surface plasma which can lead to the formation of a laser supported detonation wave (LSD wave). This shock wave can interact with the thin molten layer on the metal surface influencing to a varying degree surface oxidation and roughness features. The possibility of the expulsion, oxidation and redeposition of molten droplets, leading to the formation of micron thick oxide layers, is related to bulk metal properties and the incident laser intensity. A correlation is found between the expulsion of molten droplets and a Reynolds number, showing the interaction is turbulent. The permanent effects of these interactions on metal surfaces are observed through scanning electron microscopy (SEM), transient calorimetric measurements and Fourier transform infrared (FTIR) spectroscopy. Observed surface textures are related to the scanning procedures used to irradiate the metal surface. Fundamental radiative properties of a metal surface, the total hemispherical emissivity, the near-normal spectral absorptivity, and others are examined in this study as they are affected by excimer laser radiation. It is determined that for heavily exposed Al surface, alpha' (10.6 microns) can be increased to values close to unity. Data relating to material removal rates and chemical surface modification for excimer laser radiation is also discussed. The resultant reduction in the near-normal reflectivity solves the fundamental problem of coupling laser radiation into highly reflective and conductive metals such as copper and aluminum. The

Nanosecond field emitted and photo-field emitted current pulses from ZrC tips

International Nuclear Information System (INIS)

Ganter, R.; Bakker, R.J.; Gough, C.; Paraliev, M.; Pedrozzi, M.; Le Pimpec, F.; Rivkin, L.; Wrulich, A.

2006-01-01

In order to find electron sources with low thermal emittance, cathodes based on single tip field emitter are investigated. Maximum peak current, measured from single tip in ZrC with a typical apex radius around 1 μm, are presented. Voltage pulses of 2 ns duration and up to 50 kV amplitude lead to field emission current up to 470 mA from one ZrC tip. Combination of high applied electric field with laser illumination gives the possibility to modulate the emission with laser pulses. Nanoseconds current pulses have been emitted with laser pulses at 1064 nm illuminating a ZrC tip under high-DC electric field. The dependence of photo-field emitted current with the applied voltage can be explained by the Schottky effect

Nanosecond field emitted and photo-field emitted current pulses from ZrC tips

Energy Technology Data Exchange (ETDEWEB)

Ganter, R. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland)]. E-mail: romain.ganter@psi.ch; Bakker, R.J. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland); Gough, C. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland); Paraliev, M. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland); Pedrozzi, M. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland); Le Pimpec, F. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland); Rivkin, L. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland); Wrulich, A. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland)

2006-09-15

In order to find electron sources with low thermal emittance, cathodes based on single tip field emitter are investigated. Maximum peak current, measured from single tip in ZrC with a typical apex radius around 1 {mu}m, are presented. Voltage pulses of 2 ns duration and up to 50 kV amplitude lead to field emission current up to 470 mA from one ZrC tip. Combination of high applied electric field with laser illumination gives the possibility to modulate the emission with laser pulses. Nanoseconds current pulses have been emitted with laser pulses at 1064 nm illuminating a ZrC tip under high-DC electric field. The dependence of photo-field emitted current with the applied voltage can be explained by the Schottky effect.

X-ray spectrum in the range (6-12) A emitted by laser-produced plasma of samarium

International Nuclear Information System (INIS)

Louzon, Einat; Henis, Zohar; Levi, Izhak; Hurvitz, Gilad; Ehrlich, Yosi; Fraenkel, Moshe; Maman, Shlomo; Mandelbaum, Pinchas

2009-01-01

A detailed analysis of the x-ray spectrum emitted by laser-produced plasma of samarium (6-12 A) is presented, using ab initio calculations with the HULLAC relativistic code and isoelectronic considerations. Resonance 3d-nf (n=4 to 7), 3p-4d, 3d-4p, and 3p-4s transitions in Ni samarium ions and in neighboring ionization states (from Mn to Zn ions) were identified. The experiment results show changes in the fine details of the plasma spectrum for different laser intensities.

Unresolved spectral structures emitted from heavy atom plasmas produced by short pulse laser

International Nuclear Information System (INIS)

Fraenkel, M.; Zigler, A.

1999-01-01

Spectra of rare earth elements emitted from ultra short pulse laser produced plasma were recorded using simultaneously high and low resolution, spectrometers. A study of the broad band emission of the Δn = 1 transitions in highly ionized Ba and Sm plasma showed that this band is completely unresolved. The spectra were analyzed using the LTE based on super-transition array (STA) model. The theory reconstructs the entire Ba spectrum using a single temperature and density, whereas for Sm the discrepancies between the theory and experiment are not reconcilable. The agreement in the Ba case is attributed to the fact that BaF 2 target is transparent to the laser's prepulse effects, producing a homogeneous dense plasma, whereas for Sm the dilute plasma created by the prepulse is far from LTE. The obtained results posses a significant implication to the applicability of the STA model, in particular for calculations of opacities and conversion of laser light to X-rays. (orig.)

Unresolved spectral structures emitted from heavy atom plasmas produced by short pulse laser

Energy Technology Data Exchange (ETDEWEB)

Fraenkel, M.; Zigler, A. [Hebrew Univ., Jerusalem (Israel). Racah Inst. of Physics; Bar-Shalom, A.; Oreg, J. [Israel Atomic Energy Commission, Beersheba (Israel). Nuclear Research Center-Negev; Faenov, A.Ya.; Pikuz, T.A. [Multicharged Ions Spectra Data Center of VNIIFTRI, Russian Committee of Standards Moscow region (Russian Federation)

1999-09-01

Spectra of rare earth elements emitted from ultra short pulse laser produced plasma were recorded using simultaneously high and low resolution, spectrometers. A study of the broad band emission of the {delta}n = 1 transitions in highly ionized Ba and Sm plasma showed that this band is completely unresolved. The spectra were analyzed using the LTE based on super-transition array (STA) model. The theory reconstructs the entire Ba spectrum using a single temperature and density, whereas for Sm the discrepancies between the theory and experiment are not reconcilable. The agreement in the Ba case is attributed to the fact that BaF{sub 2} target is transparent to the laser's prepulse effects, producing a homogeneous dense plasma, whereas for Sm the dilute plasma created by the prepulse is far from LTE. The obtained results posses a significant implication to the applicability of the STA model, in particular for calculations of opacities and conversion of laser light to X-rays. (orig.)

Surface improvement for inside surface of small diameter pipes by laser cladding technique

International Nuclear Information System (INIS)

Irisawa, Toshio; Morishige, Norio; Umemoto, Tadahiro; Ono, Kazumichi; Hamaoka, Tadashi; Tanaka, Atsushi

1991-01-01

A laser cladding technique has been used for surface improvement in controlling the composition of a metal surface. Recent high power YAG laser development gives an opportunity to use this laser cladding technique for various applications. A YAG laser beam can be transmitted through an optical fiber for a long distance and through narrow spaces. YAG laser cladding was studied for developing alloy steel to prevent stress corrosion cracking in austenitic stainless steel piping. In order to make a cladding layer, mixed metal powder was on the inside surface of the piping using an organic binder. Subsequently the powder beds were melted with a YAG laser beam transmitted through an optical fiber. This paper introduces the Laser cladding technique for surface improvement for the inside surface of a small diameter pipe. (author)

Extraction of surface plasmons in organic light-emitting diodes via high-index coupling.

Science.gov (United States)

Scholz, Bert J; Frischeisen, Jörg; Jaeger, Arndt; Setz, Daniel S; Reusch, Thilo C G; Brütting, Wolfgang

2012-03-12

The efficiency of organic light-emitting diodes (OLEDs) is still limited by poor light outcoupling. In particular, the excitation of surface plasmon polaritons (SPPs) at metal-organic interfaces represents a major loss channel. By combining optical simulations and experiments on simplified luminescent thin-film structures we elaborate the conditions for the extraction of SPPs via coupling to high-index media. As a proof-of-concept, we demonstrate the possibility to extract light from wave-guided modes and surface plasmons in a top-emitting white OLED by a high-index prism.

Analysis of the x-ray spectrum emitted by laser-produced plasma of dysprosium

International Nuclear Information System (INIS)

Marcus, Gilad; Louzon, Einat; Henis, Zohar; Maman, Shlomo; Mandelbaum, Pinchas

2007-01-01

A detailed analysis of the x-ray spectrum (5-10.2 A ring ) emitted by laser-produced plasma of dysprosium (Dy) is given using ab initio calculations with the HULLAC relativistic code and isoelectronic trends. Resonance 3d-4p, 3d-nf (n=4 to 7), 3p-4s, and 3p-4d transitions of Ni I-like Dy XXXIX and neighboring ion satellite transitions (from Dy XXXIV to Dy XL) are identified

Surface morphology of laser superheated Pb(111)

Energy Technology Data Exchange (ETDEWEB)

Zhang, Z. H.; Lin, Bo; Zeng, X. L.; Elsayed-Ali, H. E.

1998-05-01

The step density on the vicinal Pb(111) surface after laser superheating and melting is investigated using reflection high-energy electron diffraction. The (00) beam profiles parallel and perpendicular to the incident beam are analyzed. For laser heating with ˜100 ps laser pulses, surface superheating does not significantly change the density of the steps and step edge roughness. A sudden increase in the average terrace width is observed after laser surface melting. The average terrace width and the string length at the step edge become as large as those at room temperature. The average terrace width at 573 K changes from 38±15 to 64±19 Å after laser surface melting, while the average string length at the step edge changes from 50±12 to 250±38 Å.

Low power laser driver design in 28nm CMOS for on-chip and chip-to-chip optical interconnect

Science.gov (United States)

Belfiore, Guido; Szilagyi, Laszlo; Henker, Ronny; Ellinger, Frank

2015-09-01

This paper discusses the challenges and the trade-offs in the design of laser drivers for very-short distance optical communications. A prototype integrated circuit is designed and fabricated in 28 nm super-low-power CMOS technology. The power consumption of the transmitter is 17.2 mW excluding the VCSEL that in our test has a DC power consumption of 10 mW. The active area of the driver is only 0.0045 mm2. The driver can achieve an error-free (BER < 10 -12) electrical data-rate of 25 Gbit/s using a pseudo random bit sequence of 27 -1. When the driver is connected to the VCSEL module an open optical eye is reported at 15 Gbit/s. In the tested bias point the VCSEL module has a measured bandwidth of 10.7 GHz.

An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination.

Science.gov (United States)

Zhao, Chao; Ng, Tien Khee; Prabaswara, Aditya; Conroy, Michele; Jahangir, Shafat; Frost, Thomas; O'Connell, John; Holmes, Justin D; Parbrook, Peter J; Bhattacharya, Pallab; Ooi, Boon S

2015-10-28

We present a detailed study of the effects of dangling bond passivation and the comparison of different sulfide passivation processes on the properties of InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated the first organic sulfide passivation process for nitride nanowires (NWs). The results from Raman spectroscopy, photoluminescence (PL) measurements, and X-ray photoelectron spectroscopy (XPS) showed that octadecylthiol (ODT) effectively passivated the surface states, and altered the surface dynamic charge, and thereby recovered the band-edge emission. The effectiveness of the process with passivation duration was also studied. Moreover, we also compared the electro-optical performance of NW-LEDs emitting at green wavelength before and after ODT passivation. We have shown that the Shockley-Read-Hall (SRH) non-radiative recombination of NW-LEDs can be greatly reduced after passivation by ODT, which led to a much faster increasing trend of quantum efficiency and higher peak efficiency. Our results highlighted the possibility of employing this technique to further design and produce high performance NW-LEDs and NW-lasers.

An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination

KAUST Repository

Zhao, Chao

2015-07-24

We present a detailed study on the effects of dangling bond passivation and the comparison of different sulfides passivation process on the properties of InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated the first organic sulfide passivation process for nitride nanowires (NWs). The results from Raman spectroscopy, photoluminescence (PL) measurements, and X-ray photoelectron spectroscopy (XPS) showed octadecylthiol (ODT) effectively passivated the surface states, and altered the surface dynamic charge, thereby recovered the band-edge emission. The effectiveness of the process with passivation duration was also studied. Moreover, we also compared the electro-optical performance of NW-LEDs emitting at green wavelength before and after ODT passivation. We have shown that the Shockley-Read-Hall (SRH) non-radiative recombination of NW-LEDs can be greatly reduced after passivation by ODT, which led to a much faster increasing trend of quantum efficiency, and higher peak efficiency. Our results highlighted the research opportunity in employing this technique for further design and realization of high performance NW-LEDs and NW-lasers.

Polarization switching detection method using a ferroelectric liquid crystal for dichroic atomic vapor laser lock frequency stabilization techniques.

Science.gov (United States)

Dudzik, Grzegorz; Rzepka, Janusz; Abramski, Krzysztof M

2015-04-01

We present a concept of the polarization switching detection method implemented for frequency-stabilized lasers, called the polarization switching dichroic atomic vapor laser lock (PSDAVLL) technique. It is a combination of the well-known dichroic atomic vapor laser lock method for laser frequency stabilization with a synchronous detection system based on the surface-stabilized ferroelectric liquid crystal (SSFLC).The SSFLC is a polarization switch and quarter wave-plate component. This technique provides a 9.6 dB better dynamic range ratio (DNR) than the well-known two-photodiode detection configuration known as the balanced polarimeter. This paper describes the proposed method used practically in the VCSEL laser frequency stabilization system. The applied PSDAVLL method has allowed us to obtain a frequency stability of 2.7×10⁻⁹ and a reproducibility of 1.2×10⁻⁸, with a DNR of detected signals of around 81 dB. It has been shown that PSDAVLL might be successfully used as a method for spectra-stable laser sources.

Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

2016-01-01

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Effect of laser pulse parameters on the size and fluorescence of nanodiamonds formed upon pulsed-laser irradiation

International Nuclear Information System (INIS)

Bai, Peikang; Hu, Shengliang; Zhang, Taiping; Sun, Jing; Cao, Shirui

2010-01-01

The size of nanodiamonds formed upon laser irradiation could be easily controlled over simply adjusting laser pulse parameters. The stable size and structure of nanodiamonds were mostly determined by laser power density and pulse width. Both large nanodiamonds with multiply twinning structure (MTS) and small nanodiamonds with single crystalline structure (SCS) emitted strong visible light after surface passivation, and their fluorescence quantum yield (QY) was 4.6% and 7.1%, respectively.

Effect of laser pulse parameters on the size and fluorescence of nanodiamonds formed upon pulsed-laser irradiation

Energy Technology Data Exchange (ETDEWEB)

Bai, Peikang [School of Materials Science and Engineering, North University of China, Taiyuan 030051 (China); Hu, Shengliang, E-mail: hsliang@yeah.net [Key Laboratory of Instrumentation Science and Dynamic Measurement (North University of China), Ministry of Education, National Key Laboratory Science and Technology on Electronic Test and Measurement, Taiyuan 030051 (China); School of Materials Science and Engineering, North University of China, Taiyuan 030051 (China); Zhang, Taiping; Sun, Jing [School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Cao, Shirui [School of Materials Science and Engineering, North University of China, Taiyuan 030051 (China)

2010-07-15

The size of nanodiamonds formed upon laser irradiation could be easily controlled over simply adjusting laser pulse parameters. The stable size and structure of nanodiamonds were mostly determined by laser power density and pulse width. Both large nanodiamonds with multiply twinning structure (MTS) and small nanodiamonds with single crystalline structure (SCS) emitted strong visible light after surface passivation, and their fluorescence quantum yield (QY) was 4.6% and 7.1%, respectively.

Novel Electro-Optical Coupling Technique for Magnetic Resonance-Compatible Positron Emission Tomography Detectors

Directory of Open Access Journals (Sweden)

Peter D. Olcott

2009-03-01

Full Text Available A new magnetic resonance imaging (MRI-compatible positron emission tomography (PET detector design is being developed that uses electro-optical coupling to bring the amplitude and arrival time information of high-speed PET detector scintillation pulses out of an MRI system. The electro-optical coupling technology consists of a magnetically insensitive photodetector output signal connected to a nonmagnetic vertical cavity surface emitting laser (VCSEL diode that is coupled to a multimode optical fiber. This scheme essentially acts as an optical wire with no influence on the MRI system. To test the feasibility of this approach, a lutetium-yttrium oxyorthosilicate crystal coupled to a single pixel of a solid-state photomultiplier array was placed in coincidence with a lutetium oxyorthosilicate crystal coupled to a fast photomultiplier tube with both the new nonmagnetic VCSEL coupling and the standard coaxial cable signal transmission scheme. No significant change was observed in 511 keV photopeak energy resolution and coincidence time resolution. This electro-optical coupling technology enables an MRI-compatible PET block detector to have a reduced electromagnetic footprint compared with the signal transmission schemes deployed in the current MRI/PET designs.

Novel electro-optical coupling technique for magnetic resonance-compatible positron emission tomography detectors.

Science.gov (United States)

Olcott, Peter D; Peng, Hao; Levin, Craig S

2009-01-01

A new magnetic resonance imaging (MRI)-compatible positron emission tomography (PET) detector design is being developed that uses electro-optical coupling to bring the amplitude and arrival time information of high-speed PET detector scintillation pulses out of an MRI system. The electro-optical coupling technology consists of a magnetically insensitive photodetector output signal connected to a nonmagnetic vertical cavity surface emitting laser (VCSEL) diode that is coupled to a multimode optical fiber. This scheme essentially acts as an optical wire with no influence on the MRI system. To test the feasibility of this approach, a lutetium-yttrium oxyorthosilicate crystal coupled to a single pixel of a solid-state photomultiplier array was placed in coincidence with a lutetium oxyorthosilicate crystal coupled to a fast photomultiplier tube with both the new nonmagnetic VCSEL coupling and the standard coaxial cable signal transmission scheme. No significant change was observed in 511 keV photopeak energy resolution and coincidence time resolution. This electro-optical coupling technology enables an MRI-compatible PET block detector to have a reduced electromagnetic footprint compared with the signal transmission schemes deployed in the current MRI/PET designs.

Fabrication of high performance microlenses for an integrated capillary channel electrochromatograph with fluorescence detection

International Nuclear Information System (INIS)

Wendt, J. R.; Warren, M. E.; Sweatt, W. C.; Bailey, C. G.; Matzke, C. M.; Arnold, D. W.; Allerman, A. A.; Carter, T. R.; Asbill, R. E.; Samora, S.

1999-01-01

We describe the microfabrication of an extremely compact optical system as a key element in an integrated capillary channel electrochromatograph with fluorescence detection. The optical system consists of a vertical cavity surface-emitting laser (VCSEL), two high performance microlenses, and a commercial photodetector. The microlenses are multilevel diffractive optics patterned by electron beam lithography and etched by reactive ion etching in fused silica. The design uses substrate-mode propagation within the fused silica substrate. Two generations of optical subsystems are described. The first generation design has a 6 mm optical length and is integrated directly onto the capillary channel-containing substrate. The second generation design separates the optical system onto its own substrate module and the optical path length is further compressed to 3.5 mm. The first generation design has been tested using direct fluorescence detection with a 750 nm VCSEL pumping a 10 -4 M solution of CY-7 dye. The observed signal-to-noise ratio of better than 100:1 demonstrates that the background signal from scattered pump light is low despite the compact size of the optical system and is adequate for system sensitivity requirements. (c) 1999 American Vacuum Society

Laser-Controlled Growth of Needle-Shaped Organic Nanoaggregates

DEFF Research Database (Denmark)

Balzer, Frank; Rubahn, Horst-Günter

2002-01-01

Arrays of mutually parallel oriented, single-crystalline, needle-like structures of light-emitting p-hexaphenyl molecules are generated in the focus of an argon ion laser. The cross sectional dimensions of the needles are of the order of 100 to 200 nm with lengths up to several hundred micrometer....... While the orientation of the individual molecules in the needles is defined by the direction of surface dipoles, the localization on the surface, the length distribution as well as mutual distances can be adjusted via size and position of the laser focus spot.......Arrays of mutually parallel oriented, single-crystalline, needle-like structures of light-emitting p-hexaphenyl molecules are generated in the focus of an argon ion laser. The cross sectional dimensions of the needles are of the order of 100 to 200 nm with lengths up to several hundred micrometers...

24-Dimensional Modulation Formats for 100 Gbit/s IM-DD Transmission Systems Using 850 nm Single-Mode VCSEL

DEFF Research Database (Denmark)

Lu, Xiaofeng; Lyubopytov, Vladimir; Tafur Monroy, Idelfonso

2017-01-01

Twenty-four dimensional modulation format with 2 bit/symbol spectrum efficiency is proposed and investigated in an up to 100 Gbit/s VCSEL-based IM-DD transmission system with respect to the channel bandwidth and the power budget.......Twenty-four dimensional modulation format with 2 bit/symbol spectrum efficiency is proposed and investigated in an up to 100 Gbit/s VCSEL-based IM-DD transmission system with respect to the channel bandwidth and the power budget....

Surface plasmon enhanced organic light emitting diodes by gold nanoparticles with different sizes

Energy Technology Data Exchange (ETDEWEB)

Gao, Chia-Yuan; Chen, Ying-Chung [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chen, Kan-Lin [Department of Electronic Engineering, Fortune Institute of Technology, Kaohsiung, Taiwan (China); Huang, Chien-Jung, E-mail: chien@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan (China)

2015-11-30

Highlights: • Different varieties, sizes, and shapes for nanoparticles will generate different surface plasmon resonance effects in the devices. • The red-shift phenomenon for absorption peaks is because of an increasing contribution of higher-order plasmon modes for the larger gold nanoparticles. • The mobility of electrons in the electron-transport layer of organic light-emitting diodes is a few orders of magnitude lower than that of holes in the hole-transport layer of organic light-emitting diodes. - Abstract: The influence of gold nanoparticles (GNPs) with different sizes doped into (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)) (PEDOT:PSS) on the performance of organic light-emitting diodes is investigated in this study. The current efficiency of the device, at a current density of 145 mA/cm, with PEDOT:PSS doped with GNPs of 8 nm is about 1.57 times higher than that of the device with prime PEDOT:PSS because the absorption peak of GNPs is closest to the photoluminescence peak of the emission layer, resulting in maximum surface plasmon resonance effect in the device. In addition, the surface-enhanced Raman scattering spectroscopy also reveals the maximum surface plasmon resonance effect in the device when the mean particle size of GNPs is 8 nm.

Surface displacement imaging by interferometry with a light emitting diode

International Nuclear Information System (INIS)

Dilhaire, Stefan; Grauby, Stephane; Jorez, Sebastien; Lopez, Luis David Patino; Rampnoux, Jean-Michel; Claeys, Wilfrid

2002-01-01

We present an imaging technique to measure static surface displacements of electronic components. A device is supplied by a transient current that creates a variation of temperature, thus a surface displacement. To measure the latter, a setup that is based on a Michelson interferometer is used. To avoid the phenomenon of speckle and the drawbacks inherent to it, we use a light emitting diode as the light source for the interferometer. The detector is a visible CCD camera that analyzes the optical signal containing the information of surface displacement of the device. Combining images, we extract the amplitude of the surface displacement. Out-of-plane surface-displacement images of a thermoelectric device are presented

Laser Surface Modification of H13 Die Steel using Different Laser Spot Sizes

Science.gov (United States)

Aqida, S. N.; Naher, S.; Brabazon, D.

2011-05-01

This paper presents a laser surface modification process of AISI H13 tool steel using three sizes of laser spot with an aim to achieve reduced grain size and surface roughness. A Rofin DC-015 diffusion-cooled CO2 slab laser was used to process AISI H13 tool steel samples. Samples of 10 mm diameter were sectioned to 100 mm length in order to process a predefined circumferential area. The parameters selected for examination were laser peak power, overlap percentage and pulse repetition frequency (PRF). Metallographic study and image analysis were done to measure the grain size and the modified surface roughness was measured using two-dimensional surface profilometer. From metallographic study, the smallest grain sizes measured by laser modified surface were between 0.51 μm and 2.54 μm. The minimum surface roughness, Ra, recorded was 3.0 μm. This surface roughness of the modified die steel is similar to the surface quality of cast products. The grain size correlation with hardness followed the findings correlate with Hall-Petch relationship. The potential found for increase in surface hardness represents an important method to sustain tooling life.

Surface wettability of silicon substrates enhanced by laser ablation

Energy Technology Data Exchange (ETDEWEB)

Tseng, Shih-Feng [National Applied Research Laboratories, Instrument Technology Research Center, Hsinchu (China); National Chiao Tung University, Department of Mechanical Engineering, Hsinchu (China); Hsiao, Wen-Tse; Huang, Kuo-Cheng; Hsiao, Sheng-Yi [National Applied Research Laboratories, Instrument Technology Research Center, Hsinchu (China); Chen, Ming-Fei [National Changhua University of Education, Department of Mechatronics Engineering, Changhua (China); Lin, Yung-Sheng [Hungkuang University, Department of Applied Cosmetology and Graduate Institute of Cosmetic Science, Taichung (China); Chou, Chang-Pin [National Chiao Tung University, Department of Mechanical Engineering, Hsinchu (China)

2010-11-15

Laser-ablation techniques have been widely applied for removing material from a solid surface using a laser-beam irradiating apparatus. This paper presents a surface-texturing technique to create rough patterns on a silicon substrate using a pulsed Nd:YAG laser system. The different degrees of microstructure and surface roughness were adjusted by the laser fluence and laser pulse duration. A scanning electron microscope (SEM) and a 3D confocal laser-scanning microscope are used to measure the surface micrograph and roughness of the patterns, respectively. The contact angle variations between droplets on the textured surface were measured using an FTA 188 video contact angle analyzer. The results indicate that increasing the values of laser fluence and laser pulse duration pushes more molten slag piled around these patterns to create micro-sized craters and leads to an increase in the crater height and surface roughness. A typical example of a droplet on a laser-textured surface shows that the droplet spreads very quickly and almost disappears within 0.5167 s, compared to a contact angle of 47.9 on an untextured surface. This processing technique can also be applied to fabricating Si solar panels to increase the absorption efficiency of light. (orig.)

An investigation of laser processing of silica surfaces

International Nuclear Information System (INIS)

Weber, A.J.; Stewart, A.F.; Exarhos, G.J.; Stowell, W.K.

1988-01-01

An initial set of experiments has been conducted to determine the practicality of laser processing of optical substrates. In contrast to earlier work, a high average power CO 2 laser was used to flood load the entire surface of each test sample. Fused silica substrates were laser polished on both surfaces at power densities ranging from 150 to 350 W/cm 2 . During each test sequence sample surface temperatures were recorded using a thermal imaging system. Extensive pre- and post-test characterization revealed that surface roughness and scattering of bare silica surfaces were reduced while internal stress increased. Laser damage thresholds were found to increase only for certain conditions. Changes in the microstructure were observed. These preliminary experiments demonstrate that laser processing can dramatically improve the optical properties of fused silica substrates

Laser surface cleaning

International Nuclear Information System (INIS)

Freiwald, J.G.; Freiwald, D.A.

1994-01-01

The objective of this work is a laboratory demonstration that red-lead primer and two-part epoxy paints can be stripped from concrete and metal surfaces using surface cleaning systems based on pulsed-repetition CO 2 lasers. The three goals are to: (1) demonstrate coatings removal, including surface pore cleaning; (2) demonstrate that there is negligible release of ablated contaminants to the environment; and (3) demonstrate that the process will generate negligible amounts of additional waste compared to competing technologies. Phase 1 involved site visits to RMI and Fernald to assess the cleaning issues for buildings and parts. In addition, Phase 1 included detailed designs of a more powerful system for industrial cleaning rates, including laser, articulating optics, ablated-material capture suction nozzle attached to a horizontal raster scanner for floor cleaning, and filtration system. Some concept development is also being done for using robots, and for parts cleaning. In Phase 2 a transportable 6 kW system will be built and tested, with a horizontal surface scanner for cleaning paint from floors. The laboratory tests will again be instrumented. Some concept development will continue for using robots, and for parts cleaning. This report describes Phase 1 results

Comparison of optical feedback dynamics of InAs/GaAs quantum-dot lasers emitting solely on ground or excited states.

Science.gov (United States)

Lin, Lyu-Chih; Chen, Chih-Ying; Huang, Heming; Arsenijević, Dejan; Bimberg, Dieter; Grillot, Frédéric; Lin, Fan-Yi

2018-01-15

We experimentally compare the dynamics of InAs/GaAs quantum dot lasers under optical feedback emitting exclusively on ground states (GSs) or excited states (ESs). By varying the feedback parameters and putting focus either on their short or long cavity regions, various periodic and chaotic oscillatory states are found. The GS laser is shown to be more resistant to feedback, benefiting from its strong relaxation oscillation damping. In contrast, the ES laser can easily be driven into complex dynamics. While the GS laser is of importance for the development of isolator-free transmitters, the ES laser is essential for applications taking advantages of chaos.

Resonantly diode pumped Er:YAG laser systems emitting at 1645 nm for methane detection

International Nuclear Information System (INIS)

Fritsche, H; Lux, O; Wang, X; Zhao, Z; Eichler, H J

2013-01-01

We report on the development of compact and frequency-stable Er:YAG laser systems emitting in the eye-safe spectral region. Resonant cw diode pumping provides 4.5 W output power in cw operation and 2.2 mJ in Q-switched operation with pulse duration of about 140 ns. The application of intra-cavity etalons allows for wavelength tuning from 1645.22 to 1646.33 nm while the frequency stability accounts for less than 50 MHz. The potential of the erbium laser sources in terms of methane detection was evaluated under laboratory conditions by absorption measurements employing a multi-pass absorption cell. The experimental investigations were accompanied by theoretical studies on the influence of pressure broadening on the absorption behavior of methane. (letter)

Diagnostic and characterization of the VCSEL diodes based on GaSb

Czech Academy of Sciences Publication Activity Database

Matulková, Irena; Cihelka, Jaroslav; Vyskočil, Jan; Zelinger, Zdeněk; Hulicius, Eduard; Šimeček, Tomislav; Civiš, Svatopluk

2010-01-01

Roč. 99, 1-2 (2010), s. 333-338 ISSN 0946-2171 R&D Projects: GA AV ČR IAA400400705 Institutional research plan: CEZ:AV0Z40400503; CEZ:AV0Z10100521 Keywords : VCSEL diode s * FTIR * GaSb Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.239, year: 2010

Laser machining micro-structures on diamond surface with a sub-nanosecond pulsed laser

Science.gov (United States)

Wu, Mingtao; Guo, Bing; Zhao, Qingliang

2018-02-01

Micro-structure surface on diamond material is widely used in a series of industrial and scientific applications, such as micro-electromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics, textured or micro-structured diamond machining tools. The efficient machining of micro-structure on diamond surface is urgently demanded in engineering. In this paper, laser machining square micro-structure on diamond surface was studied with a sub-nanosecond pulsed laser. The influences of laser machining parameters, including the laser power, scanning speed, defocusing quantity and scanning pitch, were researched in view of the ablation depth, material removal rate and machined surface topography. Both the ablation depth and material removal rate increased with average laser power. A reduction of the growth rate of the two parameters was induced by the absorption of the laser plasma plume at high laser power. The ablation depth non-linearly decreased with the increasing of the scanning speed while the material removal rate showed an opposite tendency. The increasing of the defocusing quantity induced complex variation of the ablation depth and the material removal rate. The maximum ablation depth and material removal rate were achieved at a defocusing position. The ablation depth and material removal rate oppositely varied about the scanning pitch. A high overlap ratio was meaningful for achieving a smooth micro-structure surface topography. Laser machining with a large defocusing quantity, high laser power and small scanning pitch was helpful for acquiring the desired micro-structure which had a large depth and smooth micro-structure surface topography.

Ultraviolet laser transverse profile shaping for improving x-ray free electron laser performance

International Nuclear Information System (INIS)

Li, S.; Alverson, S.; Bohler, D.; Egger, A.; Fry, A.

2017-01-01

The photocathode rf gun is one of the most critical components in x-ray free electron lasers. The drive laser strikes the photocathode surface, which emits electrons with properties that depend on the shape of the drive laser. Most free electron lasers use photocathodes with work function in the ultraviolet, a wavelength where direct laser manipulation becomes challenging. In this paper, we present a novel application of a digital micromirror device (DMD) for the 253 nm drive laser at the Linear Coherent Light Source. Laser profile shaping is accomplished through an iterative algorithm that takes into account shaping error and efficiency. Next, we use laser shaping to control the X-ray laser output via an online optimizer, which shows improvement in FEL pulse energy. Lastly, as a preparation for electron beam shaping, we use the DMD to measure the photocathode quantum efficiency across cathode surface with an averaged laser rms spot size of 59 μm. In conclusion, our experiments demonstrate promising outlook of using DMD to shape ultraviolet lasers for photocathode rf guns with various applications.

Ultraviolet laser transverse profile shaping for improving x-ray free electron laser performance

Science.gov (United States)

Li, S.; Alverson, S.; Bohler, D.; Egger, A.; Fry, A.; Gilevich, S.; Huang, Z.; Miahnahri, A.; Ratner, D.; Robinson, J.; Zhou, F.

2017-08-01

The photocathode rf gun is one of the most critical components in x-ray free electron lasers. The drive laser strikes the photocathode surface, which emits electrons with properties that depend on the shape of the drive laser. Most free electron lasers use photocathodes with work function in the ultraviolet, a wavelength where direct laser manipulation becomes challenging. In this paper, we present a novel application of a digital micromirror device (DMD) for the 253 nm drive laser at the Linear Coherent Light Source. Laser profile shaping is accomplished through an iterative algorithm that takes into account shaping error and efficiency. Next, we use laser shaping to control the X-ray laser output via an online optimizer, which shows improvement in FEL pulse energy. Lastly, as a preparation for electron beam shaping, we use the DMD to measure the photocathode quantum efficiency across cathode surface with an averaged laser rms spot size of 59 μ m . Our experiments demonstrate promising outlook of using DMD to shape ultraviolet lasers for photocathode rf guns with various applications.

[INVITED] Laser treatment of Inconel 718 alloy and surface characteristics

Science.gov (United States)

Yilbas, B. S.; Ali, H.; Al-Aqeeli, N.; Karatas, C.

2016-04-01

Laser surface texturing of Inconel 718 alloy is carried out under the high pressure nitrogen assisting gas. The combination of evaporation and melting at the irradiated surface is achieved by controlling the laser scanning speed and the laser output power. Morphological and metallurgical changes in the treated surface are analyzed using the analytical tools including optical, electron scanning, and atomic force microscopes, energy dispersive spectroscopy, and X-ray diffraction. Microhardnes and friction coefficient of the laser treated surface are measured. Residual stress formed in the surface region is determined from the X-ray diffraction data. Surface hydrophobicity of the laser treated layer is assessed incorporating the sessile drop method. It is found that laser treated surface is free from large size asperities including cracks and the voids. Surface microhardness increases significantly after the laser treatment process, which is attributed to the dense layer formation at the surface under the high cooling rates, dissolution of Laves phase in the surface region, and formation of nitride species at the surface. Residual stress formed is compressive in the laser treated surface and friction coefficient reduces at the surface after the laser treatment process. The combination of evaporation and melting at the irradiated surface results in surface texture composes of micro/nano-poles and pillars, which enhance the surface hydrophobicity.

Characterization and modeling of the intrinsic properties of 1.5-micrometer gallium indium nitrogen arsenic antimonide/gallium arsenide laser

Science.gov (United States)

Goddard, Lynford

2005-12-01

Low cost access to optical communication networks is needed to satisfy the rapidly increasing demands of home-based high-speed Internet. Existing light sources in the low-loss 1.2--1.6mum telecommunication wavelength bandwidth are prohibitively expensive for large-scale deployment, e.g. incorporation in individual personal computers. Recently, we have extended the lasing wavelength of room-temperature CW GaInNAs(Sb) lasers grown monolithically on GaAs by MBE up to 1.52mum in an effort to replace the traditional, more expensive, InP-based devices. Besides lower cost wafers, GaInNAs(Sb) opto-electronic devices have fundamental material advantages over InP-based devices: a larger conduction band offset which reduces temperature sensitivity and enhances differential gain, a lattice match to a material with a large refractive index contrast, i.e. AlAs, which decreases the necessary number of mirror pairs in DBRs for VCSELs, and native oxide apertures for current confinement. High performance GaInNAs(Sb) edge-emitting lasers, VCSELs, and DFB lasers have been demonstrated throughout the entire telecommunication band. In this work, we analyze the intrinsic properties of the GaInNAsSb material system, e.g. recombination, gain, band structure and renormalization, and efficiency. Theoretical modeling is performed to calculate a map of the bandgap and effective masses for various material compositions. We also present device performance results, such as: room temperature CW threshold densities below 450A/cm2, quantum efficiencies above 50%, and over 425mW of total power from a SQW laser when mounted epi-up and minimally packaged. These results are generally 2--4x better than previous world records for GaAs based devices at 1.5mum. The high CW power and low threshold exhibited by these SQW lasers near 1.5mum make feasible many novel applications, such as broadband Raman fiber amplifiers and uncooled WDM at the chip scale. Device reliability of almost 500 hours at 200mW CW

10 Gb/s Real-Time All-VCSEL Low Complexity Coherent scheme for PONs

DEFF Research Database (Denmark)

Rodes Lopez, Roberto; Cheng, Ning; Jensen, Jesper Bevensee

2012-01-01

Real time demodulation of a 10 Gb/s all-VCSEL based coherent PON link with a simplified coherent receiver scheme is demonstrated. Receiver sensitivity of −33 dBm is achieved providing high splitting ratio and link reach....

VCSEL-based gigabit IR-UWB link for converged communication and sensing applications in optical metro-access networks

DEFF Research Database (Denmark)

Pham, Tien Thang; Gibbon, Timothy Braidwood; Tafur Monroy, Idelfonso

2012-01-01

We report on experimental demonstration of an impulse radio ultrawideband (IR-UWB) based converged communication and sensing system. A 1550-nm VCSEL-generated IR-UWB signal is used for 2-Gbps wireless data distribution over 800-m and 50-km single mode fiber links which present short-range in-buil...... application, paving the way forward for the development and deployment of converged UWB VCSEL-based technologies in access and in-building networks of the future.......We report on experimental demonstration of an impulse radio ultrawideband (IR-UWB) based converged communication and sensing system. A 1550-nm VCSEL-generated IR-UWB signal is used for 2-Gbps wireless data distribution over 800-m and 50-km single mode fiber links which present short-range in......-building and long-reach access network applications. The IR-UWB signal is also used to simultaneously measure the rotational speed of a blade spinning between 18 and 30 Hz. To the best of our knowledge, this is the very first demonstration of a simultaneous gigabit UWB telecommunication and wireless UWB sensing...

Laser surface processing with controlled nitrogen-argon concentration levels for regulated surface life time

Science.gov (United States)

Obeidi, M. Ahmed; McCarthy, E.; Brabazon, D.

2018-03-01

Laser surface modification can be used to enhance the mechanical properties of a material, such as hardness, toughness, fatigue strength, and corrosion resistance. Surface nitriding is a widely used thermochemical method of surface modification, in which nitrogen is introduced into a metal or other material at an elevated temperature within a furnace. It is used on parts where there is a need for increased wear resistance, corrosion resistance, fatigue life, and hardness. Laser nitriding is a novel method of nitriding where the surface is heated locally by a laser, either in an atmosphere of nitrogen or with a jet of nitrogen delivered to the laser heated site. It combines the benefits of laser modification with those of nitriding. Recent work on high toughness tool steel samples has shown promising results due to the increased nitrogen gas impingement onto the laser heated region. Increased surface activity and nitrogen adsorption was achieved which resulted in a deeper and harder surface compared to conventional hardening methods. In this work, the effects of the laser power, pulse repetition frequency, and overlap percentage on laser surface treatment of 316 L SST steel samples with an argon-nitrogen jet will be presented. Resulting microstructure, phase type, microhardness, and wear resistance are presented.

Progress Toward Measuring CO2 Isotopologue Fluxes in situ with the LLNL Miniature, Laser-based CO2 Sensor

Science.gov (United States)

Osuna, J. L.; Bora, M.; Bond, T.

2015-12-01

One method to constrain photosynthesis and respiration independently at the ecosystem scale is to measure the fluxes of CO2­ isotopologues. Instrumentation is currently available to makes these measurements but they are generally costly, large, bench-top instruments. Here, we present progress toward developing a laser-based sensor that can be deployed directly to a canopy to passively measure CO2 isotopologue fluxes. In this study, we perform initial proof-of-concept and sensor characterization tests in the laboratory and in the field to demonstrate performance of the Lawrence Livermore National Laboratory (LLNL) tunable diode laser flux sensor. The results shown herein demonstrate measurement of bulk CO2 as a first step toward achieving flux measurements of CO2 isotopologues. The sensor uses a Vertical Cavity Surface Emitting Laser (VCSEL) in the 2012 nm range. The laser is mounted in a multi-pass White Cell. In order to amplify the absorption signal of CO2 in this range we employ wave modulation spectroscopy, introducing an alternating current (AC) bias component where f is the frequency of modulation on the laser drive current in addition to the direct current (DC) emission scanning component. We observed a strong linear relationship (r2 = 0.998 and r2 = 0.978 at all and low CO2 concentrations, respectively) between the 2f signal and the CO2 concentration in the cell across the range of CO2 concentrations relevant for flux measurements. We use this calibration to interpret CO2 concentration of a gas flowing through the White cell in the laboratory and deployed over a grassy field. We will discuss sensor performance in the lab and in situ as well as address steps toward achieving canopy-deployed, passive measurements of CO2 isotopologue fluxes. This work performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344. LLNL-ABS-675788

Single-mode surface plasmon distributed feedback lasers.

Science.gov (United States)

Karami Keshmarzi, Elham; Tait, R Niall; Berini, Pierre

2018-03-29

Single-mode surface plasmon distributed feedback (DFB) lasers are realized in the near infrared using a two-dimensional non-uniform long-range surface plasmon polariton structure. The surface plasmon mode is excited onto a 20 nm-thick, 1 μm-wide metal stripe (Ag or Au) on a silica substrate, where the stripe is stepped in width periodically, forming a 1st order Bragg grating. Optical gain is provided by optically pumping a 450 nm-thick IR-140 doped PMMA layer as the top cladding, which covers the entire length of the Bragg grating, thus creating a DFB laser. Single-mode lasing peaks of very narrow linewidth were observed for Ag and Au DFBs near 882 nm at room temperature. The narrow linewidths are explained by the low spontaneous emission rate into the surface plasmon lasing mode as well as the high quality factor of the DFB structure. The lasing emission is exclusively TM polarized. Kinks in light-light curves accompanied by spectrum narrowing were observed, from which threshold pump power densities can be clearly identified (0.78 MW cm-2 and 1.04 MW cm-2 for Ag and Au DFB lasers, respectively). The Schawlow-Townes linewidth for our Ag and Au DFB lasers is estimated and very narrow linewidths are predicted for the lasers. The lasers are suitable as inexpensive, recyclable and highly coherent sources of surface plasmons, or for integration with other surface plasmon elements of similar structure.

Recent Advances in Conjugated Polymers for Light Emitting Devices

Science.gov (United States)

AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

Micropatterning on cylindrical surfaces via electrochemical etching using laser masking

International Nuclear Information System (INIS)

Cho, Chull Hee; Shin, Hong Shik; Chu, Chong Nam

2014-01-01

Highlights: • Various micropatterns were fabricated on the cylindrical surface of a stainless steel shaft. • Selective electrochemical dissolution was achieved via a series process of laser masking and electrochemical etching. • Laser masking characteristics on the non-planar surface were investigated. • A uniform mask layer was formed on the cylindrical surface via synchronized laser line scanning with a rotary system. • The characteristics of electrochemical etching on the non-planar surface were investigated. - Abstract: This paper proposes a method of selective electrochemical dissolution on the cylindrical surfaces of stainless steel shafts. Selective electrochemical dissolution was achieved via electrochemical etching using laser masking. A micropatterned recast layer was formed on the surface via ytterbium-doped pulsed fiber laser irradiation. The micropatterned recast layer could be used as a mask layer during the electrochemical etching process. Laser masking condition to form adequate mask layer on the planar surface for etching cannot be used directly on the non-planar surface. Laser masking condition changes depending on the morphological surface. The laser masking characteristics were investigated in order to form a uniform mask layer on the cylindrical surface. To minimize factors causing non-uniformity in the mask layer on the cylindrical surface, synchronized laser line scanning with a rotary system was applied during the laser masking process. Electrochemical etching characteristics were also investigated to achieve deeper etched depth, without collapsing the recast layer. Consequently, through a series process of laser masking and electrochemical etching, various micropatternings were successfully performed on the cylindrical surfaces

Laser surface modification of polyethersulfone films: effect of laser wavelength on biocompatibility

International Nuclear Information System (INIS)

Pazokian, H; Jelvani, S; Mollabashi, M; Barzin, J

2013-01-01

In this paper laser ablation of polyethersulfone (PES) films regarding to the change in biocompatibility of the surface is investigated at 3 different wavelengths of 193nm (ArF), 248 nm (KrF) and 308 nm (XeCl). The optimum laser fluence and number of pulses for the improvement of the surface biocompatibility is found by examination of the surface behavior in contact with platelets and fibroblasts cells at 3 wavelengths. These biological modifications are explained by alteration of the surface morphology and chemistry following irradiation. The results show that the KrF laser is the best choice for treatment of PES in biological applications.

Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors

KAUST Repository

Lee, Changmin

2017-07-12

Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021) substrate emitting at 410 nm was used for the transmitter. The measured modulation bandwidth of the LD was 1 GHz, which was limited by the avalanche photodetector. The emission from the NUV LD and the RGB phosphor combination measured a color rendering index (CRI) of 79 and correlated color temperature (CCT) of 4050 K, indicating promise of this approach for creating high quality white lighting. Using this configuration, data was successfully transmitted at a rate of more than 1 Gbps. This NUV laser-based system is expected to have lower background noise from sunlight at the LD emission wavelength than a system that uses a blue LD due to the rapid fall off in intensity of the solar spectrum in the NUV spectral region.

Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors.

Science.gov (United States)

Lee, Changmin; Shen, Chao; Cozzan, Clayton; Farrell, Robert M; Speck, James S; Nakamura, Shuji; Ooi, Boon S; DenBaars, Steven P

2017-07-24

Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021¯)  substrate emitting at 410 nm was used for the transmitter. The measured modulation bandwidth of the LD was 1 GHz, which was limited by the avalanche photodetector. The emission from the NUV LD and the RGB phosphor combination measured a color rendering index (CRI) of 79 and correlated color temperature (CCT) of 4050 K, indicating promise of this approach for creating high quality white lighting. Using this configuration, data was successfully transmitted at a rate of more than 1 Gbps. This NUV laser-based system is expected to have lower background noise from sunlight at the LD emission wavelength than a system that uses a blue LD due to the rapid fall off in intensity of the solar spectrum in the NUV spectral region.

Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

KAUST Repository

Jahangir, Shafat; Frost, Thomas; Hazari, Arnab; Yan, Lifan; Stark, Ethan; LaMountain, Trevor; Millunchick, Joanna M.; Ooi, Boon S.; Bhattacharya, Pallab

2015-01-01

The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

KAUST Repository

Jahangir, Shafat

2015-02-16

The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

Inspection of surface defects for cladding tube with laser

International Nuclear Information System (INIS)

Senoo, Shigeo; Igarashi, Miyuki; Satoh, Masakazu; Miura, Makoto

1978-01-01

This paper presents the results of experiment on mechanizing the visual inspection of surface defects of cladding tubes and improving the reliability of surface defect inspection. Laser spot inspection method was adopted for this purpose. Since laser speckle pattern includes many informations about surface aspects, the method can be utilized as an effective means for detection or classification of the surface defects. Laser beam is focussed on cladding tube surfaces, and the reflected laser beam forms typical stellar speckle patterns on a screen. Sample cladding tubes are driven in longitudinal direction, and a photo-detector is placed at a position where secondary reflection will fall on the detector. Reflected laser beam from defect-free surfaces shows uniform distribution on the detector. When the incident focussed laser beam is directed to defects, the intensity of the reflected light is reduced. In the second method, laser beam is scanned by a rotating cube mirror. As the results of experiment, the typical patterns caused by defects were observed. It is clear that reflection patterns change with the kinds of defects. The sensitivity of defect detection decreases with the increase in laser beam diameter. Surface defect detection by intensity change was also tested. (Kato, T.)

Laser modification of macroscopic properties of metal surface layer

Science.gov (United States)

Kostrubiec, Franciszek

1995-03-01

Surface laser treatment of metals comprises a number of diversified technological operations out of which the following can be considered the most common: oxidation and rendering surfaces amorphous, surface hardening of steel, modification of selected physical properties of metal surface layers. In the paper basic results of laser treatment of a group of metals used as base materials for electric contacts have been presented. The aim of the study was to test the usability of laser treatment from the viewpoint of requirements imposed on materials for electric contacts. The results presented in the paper refer to two different surface treatment technologies: (1) modification of infusible metal surface layer: tungsten and molybdenum through laser fusing of their surface layer and its crystallization, and (2) modification of surface layer properties of other metals through laser doping of their surface layer with foreign elements. In the paper a number of results of experimental investigations obtained by the team under the author's supervision are presented.

Power Spectral Density Evaluation of Laser Milled Surfaces

Directory of Open Access Journals (Sweden)

Raoul-Amadeus Lorbeer

2017-12-01

Full Text Available Ablating surfaces with a pulsed laser system in milling processes often leads to surface changes depending on the milling depth. Especially if a constant surface roughness and evenness is essential to the process, structural degradation may advance until the process fails. The process investigated is the generation of precise thrust by laser ablation. Here, it is essential to predict or rather control the evolution of the surfaces roughness. Laser ablative milling with a short pulse laser system in vacuum (≈1 Pa were performed over depths of several 10 µm documenting the evolution of surface roughness and unevenness with a white light interference microscope. Power spectral density analysis of the generated surface data reveals a strong influence of the crystalline structure of the solid. Furthermore, it was possible to demonstrate that this effect could be suppressed for gold.

Quad 14Gbps L-Band VCSEL-based System for WDM Migration of 4-lanes 56 Gbps Optical Data Links

DEFF Research Database (Denmark)

Estaran Tolosa, Jose Manuel; Rodes Lopez, Roberto; Pham, Tien Thang

2012-01-01

We report on migrating multiple lane link into a single WDM L-band VCSEL-based system. Experimental validation successfully achieves 10 km of SMF reach with 4x14Gbps and less than 0.5dB inter-channel crosstalk penalty.......We report on migrating multiple lane link into a single WDM L-band VCSEL-based system. Experimental validation successfully achieves 10 km of SMF reach with 4x14Gbps and less than 0.5dB inter-channel crosstalk penalty....

Designing Pulse Laser Surface Modification of H13 Steel Using Response Surface Method

Science.gov (United States)

Aqida, S. N.; Brabazon, D.; Naher, S.

2011-01-01

This paper presents a design of experiment (DOE) for laser surface modification process of AISI H13 tool steel in achieving the maximum hardness and minimum surface roughness at a range of modified layer depth. A Rofin DC-015 diffusion-cooled CO2 slab laser was used to process AISI H13 tool steel samples. Samples of 10 mm diameter were sectioned to 100 mm length in order to process a predefined circumferential area. The parameters selected for examination were laser peak power, overlap percentage and pulse repetition frequency (PRF). The response surface method with Box-Behnken design approach in Design Expert 7 software was used to design the H13 laser surface modification process. Metallographic study and image analysis were done to measure the modified layer depth. The modified surface roughness was measured using two-dimensional surface profilometer. The correlation of the three laser processing parameters and the modified surface properties was specified by plotting three-dimensional graph. The hardness properties were tested at 981 mN force. From metallographic study, the laser modified surface depth was between 37 μm and 150 μm. The average surface roughness recorded from the 2D profilometry was at a minimum value of 1.8 μm. The maximum hardness achieved was between 728 and 905 HV0.1. These findings are significant to modern development of hard coatings for wear resistant applications.

Effect of laser parameters on surface roughness of laser modified tool steel after thermal cyclic loading

Science.gov (United States)

Lau Sheng, Annie; Ismail, Izwan; Nur Aqida, Syarifah

2018-03-01

This study presents the effects of laser parameters on the surface roughness of laser modified tool steel after thermal cyclic loading. Pulse mode Nd:YAG laser was used to perform the laser surface modification process on AISI H13 tool steel samples. Samples were then treated with thermal cyclic loading experiments which involved alternate immersion in molten aluminium (800°C) and water (27°C) for 553 cycles. A full factorial design of experiment (DOE) was developed to perform the investigation. Factors for the DOE are the laser parameter namely overlap rate (η), pulse repetition frequency (f PRF) and peak power (Ppeak ) while the response is the surface roughness after thermal cyclic loading. Results indicate the surface roughness of the laser modified surface after thermal cyclic loading is significantly affected by laser parameter settings.

Amplification of pressure waves in laser-assisted endodontics with synchronized delivery of Er:YAG laser pulses.

Science.gov (United States)

Lukač, Nejc; Jezeršek, Matija

2018-05-01

When attempting to clean surfaces of dental root canals with laser-induced cavitation bubbles, the resulting cavitation oscillations are significantly prolonged due to friction on the cavity walls and other factors. Consequently, the collapses are less intense and the shock waves that are usually emitted following a bubble's collapse are diminished or not present at all. A new technique of synchronized laser-pulse delivery intended to enhance the emission of shock waves from collapsed bubbles in fluid-filled endodontic canals is reported. A laser beam deflection probe, a high-speed camera, and shadow photography were used to characterize the induced photoacoustic phenomena during synchronized delivery of Er:YAG laser pulses in a confined volume of water. A shock wave enhancing technique was employed which consists of delivering a second laser pulse at a delay with regard to the first cavitation bubble-forming laser pulse. Influence of the delay between the first and second laser pulses on the generation of pressure and shock waves during the first bubble's collapse was measured for different laser pulse energies and cavity volumes. Results show that the optimal delay between the two laser pulses is strongly correlated with the cavitation bubble's oscillation period. Under optimal synchronization conditions, the growth of the second cavitation bubble was observed to accelerate the collapse of the first cavitation bubble, leading to a violent collapse, during which shock waves are emitted. Additionally, shock waves created by the accelerated collapse of the primary cavitation bubble and as well of the accompanying smaller secondary bubbles near the cavity walls were observed. The reported phenomena may have applications in improved laser cleaning of surfaces during laser-assisted dental root canal treatments.

High Dimensional Modulation and MIMO Techniques for Access Networks

DEFF Research Database (Denmark)

Binti Othman, Maisara

Exploration of advanced modulation formats and multiplexing techniques for next generation optical access networks are of interest as promising solutions for delivering multiple services to end-users. This thesis addresses this from two different angles: high dimensionality carrierless...... the capacity per wavelength of the femto-cell network. Bit rate up to 1.59 Gbps with fiber-wireless transmission over 1 m air distance is demonstrated. The results presented in this thesis demonstrate the feasibility of high dimensionality CAP in increasing the number of dimensions and their potentially......) optical access network. 2 X 2 MIMO RoF employing orthogonal frequency division multiplexing (OFDM) with 5.6 GHz RoF signaling over all-vertical cavity surface emitting lasers (VCSEL) WDM passive optical networks (PONs). We have employed polarization division multiplexing (PDM) to further increase...

Laser welding, cutting and surface treatment

International Nuclear Information System (INIS)

Crafer, R.C.

1984-01-01

Fourteen articles cover a wide range of laser applications in welding, cutting and surface treatment. Future trends are covered as well as specific applications in shipbuilding, the manufacture of heart pacemakers, in the electronics industry, in automobile production and in the aeroengine industry. Safety with industrial lasers and the measurement of laser beam parameters are also included. One article on 'Lasers in the Nuclear Industry' is indexed separately. (U.K.)

X-UV lasers and their promising applications

International Nuclear Information System (INIS)

Ros, D.

2004-01-01

The author reviews 30 years of research and achievements concerning X-UV lasers. Typical features of X-UV lasers are: a large number of photons emitted per impulse (between 10 12 and 10 14 ) and very short impulses (between 1 and 100 ps). When a crystal is irradiated by a X-UV laser, these features favor new physical processes that did not appear when the irradiation was performed with other X-UV sources like synchrotron radiation for instance. Their high brilliance and coherence properties make them efficient means as irradiating sources or imaging tools. X-UV laser interferometry allows the mapping of a surface at the nano-metric scale without any interaction between the laser beam and the surface. (A.C.)

Impact of initial surface parameters on the final quality of laser micro-polished surfaces

Science.gov (United States)

Chow, Michael; Bordatchev, Evgueni V.; Knopf, George K.

2012-03-01

Laser micro-polishing (LμP) is a new laser-based microfabrication technology for improving surface quality during a finishing operation and for producing parts and surfaces with near-optical surface quality. The LμP process uses low power laser energy to melt a thin layer of material on the previously machined surface. The polishing effect is achieved as the molten material in the laser-material interaction zone flows from the elevated regions to the local minimum due to surface tension. This flow of molten material then forms a thin ultra-smooth layer on the top surface. The LμP is a complex thermo-dynamic process where the melting, flow and redistribution of molten material is significantly influenced by a variety of process parameters related to the laser, the travel motions and the material. The goal of this study is to analyze the impact of initial surface parameters on the final surface quality. Ball-end micromilling was used for preparing initial surface of samples from H13 tool steel that were polished using a Q-switched Nd:YAG laser. The height and width of micromilled scallops (waviness) were identified as dominant parameter affecting the quality of the LμPed surface. By adjusting process parameters, the Ra value of a surface, having a waviness period of 33 μm and a peak-to-valley value of 5.9 μm, was reduced from 499 nm to 301 nm, improving the final surface quality by 39.7%.

Biocompatibility of Er:YSGG laser radiated root surfaces

Science.gov (United States)

Benthin, Hartmut; Ertl, Thomas P.; Schmidt, Dirk; Purucker, Peter; Bernimoulin, J.-P.; Mueller, Gerhard J.

1996-01-01

Pulsed Er:YAG and Er:YSGG lasers are well known to be effective instruments for the ablation of dental hard tissues. Developments in the last years made it possible to transmit the laser radiation at these wavelengths with flexible fibers. Therefore the application in the periodontal pocket may be possible. The aim of this study was to evaluate the in-vitro conditions to generate a bioacceptable root surface. Twenty extracted human teeth, stored in an antibiotic solution, were conventionally scaled, root planed and axially separated into two halves. Two main groups were determined. With the first group laser radiation was carried out without and in the second group with spray cooling. The laser beam was scanned about root surface areas. Laser parameters were varied in a selected range. The biocompatibility was measured with the attachment of human gingival fibroblasts and directly compared to conventionally treated areas of the root surfaces. The fibroblasts were qualified and counted in SEM investigations. On conventionally treated areas gingival fibroblasts show the typical uniform cover. In dependance on the root roughness after laser treatment the fibroblasts loose the typical parallel alignment to the root surface. With spray cooling a better in-vitro attachment could be obtained. Without spray cooling the higher increase in temperature conducted to less bioacceptance by the human gingival fibroblasts to the root surface. These results show the possibility of producing bioacceptable root surfaces with pulsed laser radiation in the range of very high water absorption near 3 micrometer.

Dependence of laser assisted cleaning of clad surfaces on the laser fluence

International Nuclear Information System (INIS)

Nilaya, J.P.; Raote, P.; Sai Prasad, M.B.; Biswas, D.J.; Aniruddha Kumar

2005-01-01

The decontamination factor is studied as a function of laser fluence for three kinds of clad surfaces viz., plain zircaloy, autoclaved zircaloy and SS with cesium as the test contamination. It has been found that the decontamination factor exhibits a maximal behaviour with the laser fluence and its maximum value occurs at different laser fluences in the three cases. The maximal behaviour is attributed to reduced coupling of energy from the laser beam to the substrate due to the initiation of surface-assisted optical breakdown. The results obtained in the experiment carried out in helium environment qualitatively support this explanation (author)

Analysis of the M-shell spectra emitted by a short-pulse laser-created tantalum plasma

Science.gov (United States)

Busquet; Jiang; Coinsertion Markte CY; Kieffer; Klapisch; Bar-Shalom; Bauche-Arnoult; Bachelier

2000-01-01

The spectrum of tantalum emitted by a subpicosecond laser-created plasma, was recorded in the regions of the 3d-5f, 3d-4f, and 3d-4p transitions. The main difference with a nanosecond laser-created plasma spectrum is a broad understructure appearing under the 3d-5f transitions. An interpretation of this feature as a density effect is proposed. The supertransition array model is used for interpreting the spectrum, assuming local thermodynamic equilibrium (LTE) at some effective temperature. An interpretation of the 3d-4f spectrum using the more detailed unresolved transition array formalism, which does not assume LTE, is also proposed. Fitted contributions of the different ionic species differ slightly from the LTE-predicted values.

Laser surface treatment of grey cast iron for automotive applications

NARCIS (Netherlands)

Ocelik, V.; Tang, P.N.; de Boer, M.C.; de Oliveira, U.; de Hosson, J.T.M.; DeHosson, JTM; Brebbia, CA; Nishida, SI

2005-01-01

The surface of pearlitic grey cast iron was treated using a 2 kW Nd:YAG laser beam with the final aim to improve its surface properties, mainly for automotive applications. Two kinds of laser surface treatments were experimentally applied. In the laser surface hardening approach the surface of cast

Excimer laser surface modification: Process and properties

Energy Technology Data Exchange (ETDEWEB)

Jervis, T.R.; Nastasi, M. [Los Alamos National Lab., NM (United States); Hirvonen, J.P. [Technical Research Institute, Espoo (Finland). Metallurgy Lab.

1992-12-01

Surface modification can improve materials for structural, tribological, and corrosion applications. Excimer laser light has been shown to provide a rapid means of modifying surfaces through heat treating, surface zone refining, and mixing. Laser pulses at modest power levels can easily melt the surfaces of many materials. Mixing within the molten layer or with the gas ambient may occur, if thermodynamically allowed, followed by rapid solidification. The high temperatures allow the system to overcome kinetic barriers found in some ion mixing experiments. Alternatively, surface zone refinement may result from repeated melting-solidification cycles. Ultraviolet laser light couples energy efficiently to the surface of metallic and ceramic materials. The nature of the modification that follows depends on the properties of the surface and substrate materials. Alloying from both gas and predeposited layer sources has been observed in metals, semiconductors, and ceramics as has surface enrichment of Cr by zone refinement of stainless steel. Rapid solidification after melting often results in the formation of nonequilibrium phases, including amorphous materials. Improved surface properties, including tribology and corrosion resistance, are observed in these materials.

Laser ablation of liquid surface in air induced by laser irradiation through liquid medium

Science.gov (United States)

Utsunomiya, Yuji; Kajiwara, Takashi; Nishiyama, Takashi; Nagayama, Kunihito; Kubota, Shiro; Nakahara, Motonao

2010-10-01

The pulse laser ablation of a liquid surface in air when induced by laser irradiation through a liquid medium has been experimentally investigated. A supersonic liquid jet is observed at the liquid-air interface. The liquid surface layer is driven by a plasma plume that is produced by laser ablation at the layer, resulting in a liquid jet. This phenomenon occurs only when an Nd:YAG laser pulse (wavelength: 1064 nm) is focused from the liquid onto air at a low fluence of 20 J/cm2. In this case, as Fresnel’s law shows, the incident and reflected electric fields near the liquid surface layer are superposed constructively. In contrast, when the incident laser is focused from air onto the liquid, a liquid jet is produced only at an extremely high fluence, several times larger than that in the former case. The similarities and differences in the liquid jets and atomization processes are studied for several liquid samples, including water, ethanol, and vacuum oil. The laser ablation of the liquid surface is found to depend on the incident laser energy and laser fluence. A pulse laser light source and high-resolution film are required to observe the detailed structure of a liquid jet.

Fundamentals of semiconductor lasers

CERN Document Server

Numai, Takahiro

2015-01-01

This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

Experimental coherent control of lasers

International Nuclear Information System (INIS)

Gordon, R.; Ramsay, A.J.; Cleaver, J.R.A.; Heberle, A.P.

2002-01-01

We experimentally demonstrate coherent control of a laser. A resonant 100-fs optical pulse is injected into a vertical cavity surface emitting laser to introduce a field component with well-defined phase and thereby excite beating oscillations between the transverse lasing modes. By changing the relative phase between two injected pulses, we can enhance or destroy the beating oscillations and select which lasing modes are excited. We discuss resonant pulse injection into lasers and show how mode competition improves controllability by suppressing the phase-sensitive effects of the carriers

Ultraviolet Laser SQUID Microscope for GaN Blue Light Emitting Diode Testing

International Nuclear Information System (INIS)

Daibo, M; Kamiwano, D; Kurosawa, T; Yoshizawa, M; Tayama, N

2006-01-01

We carried out non-contacting measurements of photocurrent distributions in GaN blue light emitting diode (LED) chips using our newly developed ultraviolet (UV) laser SQUID microscope. The UV light generates the photocurrent, and then the photocurrent induces small magnetic fields around the chip. An off-axis arranged HTS-SQUID magnetometer is employed to detect a vector magnetic field whose typical amplitude is several hundred femto-tesla. Generally, it is difficult to obtain Ohmic contacts for p-type GaN because of the low hole concentration in the p-type epitaxial layer and the lack of any available metal with a higher work function compared with the p-type GaN. Therefore, a traditional probecontacted electrical test is difficult to conduct for wide band gap semiconductors without an adequately annealed electrode. Using the UV-laser SQUID microscope, the photocurrent can be measured without any electrical contact. We show the photocurrent vector map which was reconstructed from measured magnetic fields data. We also demonstrate how we found the position of a defect of the electrical short circuits in the LED chip

LASER SURFACE MODIFICATION OF TITANIUM ALLOYS — A REVIEW

OpenAIRE

Y. S. TIAN; C. Z. CHEN; D. Y. WANG; T. Q. LEI

2005-01-01

Recent developments of laser surface modification of titanium alloys for increasing their corrosion, wear and oxidation resistance are introduced. The effects of laser processing parameters on the resulting surface properties of titanium alloys are reviewed. The problems to be solved and the prospects in the field of laser modification of Ti alloys are discussed. Due to the intrinsic properties, a laser beam can be focused onto the metallic surface to produce a broad range of treatments depen...

Surface modification and characterization of indium-tin oxide for organic light-emitting devices.

Science.gov (United States)

Zhong, Z Y; Jiang, Y D

2006-10-15

In this work, we used different treatment methods (ultrasonic degreasing, hydrochloric acid treatment, and oxygen plasma) to modify the surfaces of indium-tin oxide (ITO) substrates for organic light-emitting devices. The surface properties of treated ITO substrates were studied by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), sheet resistance, contact angle, and surface energy measurements. Experimental results show that the ITO surface properties are closely related to the treatment methods, and the oxygen plasma is more efficient than the other treatments since it brings about smoother surfaces, lower sheet resistance, higher work function, and higher surface energy and polarity of the ITO substrate. Moreover, polymer light-emitting electrochemical cells (PLECs) with differently treated ITO substrates as device electrodes were fabricated and characterized. It is found that surface treatments of ITO substrates have a certain degree of influence upon the injection current, brightness, and efficiency, but hardly upon the turn-on voltages of current injection and light emission, which are in agreement with the measured optical energy gap of the electroluminescent polymer. The oxygen plasma treatment on the ITO substrate yields the best performance of PLECs, due to the improvement of interface formation and electrical contact of the ITO substrate with the polymer blend in the PLECs.

Laser treatment of a neodymium magnet and analysis of surface characteristics

Science.gov (United States)

Yilbas, B. S.; Ali, H.; Rizwan, M.; Kassas, M.

2016-08-01

Laser treatment of neodymium magnet (Nd2Fe14B) surface is carried out under the high pressure nitrogen assisting gas. A thin carbon film containing 12% WC carbide particles with 400 nm sizes are formed at the surface prior to the laser treatment process. Morphological and metallurgical changes in the laser treated layer are examined using the analytical tools. The corrosion resistance of the laser treated surface is analyzed incorporating the potentiodynamic tests carried out in 0.05 M NaCl+0.1 M H2SO4 solution. The friction coefficient of the laser treated surface is measured using the micro-scratch tester. The wetting characteristics of the treated surface are assessed incorporating the sessile water drop measurements. It is found that a dense layer consisting of fine size grains and WC particles is formed in the surface region of the laser treated layer. Corrosion resistance of the surface improves significantly after the laser treatment process. Friction coefficient of laser treated surface is lower than that of the as received surface. Laser treatment results in superhydrophobic characteristics at the substrate surface. The formation of hematite and grain size variation in the treated layer slightly lowers the magnetic strength of the laser treated workpiece.

1-W quasi-cw near-diffraction-limited semiconductor laser pumped optically by a fibre-coupled diode bar

OpenAIRE

Dhanjal, S.; Hoogland, S.; Roberts, J.S.; Hayward, R.A.; Clarkson, W.A.; Tropper, Anne

2000-01-01

We describe a diode-bar-pumped vertical-external-cavity surface-emitting semiconductor laser, which in quasi-cw operation emitted a peak power of >1 W at 1020 nm in a circular, near diffraction-limited beam.

IM/DD vs. 4-PAM Using a 1550-nm VCSEL over Short-Range SMF/MMF Links for Optical Interconnects

DEFF Research Database (Denmark)

Karinou, Fotini; Rodes Lopez, Roberto; Prince, Kamau

2013-01-01

We experimentally compare the performance of 10.9-Gb/s IM/DD and 5-GBd 4-PAM modulation formats over 5-km SMF and 1-km MMF links, employing a commercially-available 1550-nm VCSEL as an enabling technology for use in optical interconnects.......We experimentally compare the performance of 10.9-Gb/s IM/DD and 5-GBd 4-PAM modulation formats over 5-km SMF and 1-km MMF links, employing a commercially-available 1550-nm VCSEL as an enabling technology for use in optical interconnects....

Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Kageyama, Takeo; Miyamoto, Tomoyuki; Ohta, Masataka; Matsuura, Tetsuya; Matsui, Yasutaka; Furuhata, Tatsuya; Koyama, Fumio

2004-01-01

A surfactant effect of antimony (Sb) on highly strained GaInAs quantum wells (QWs) was studied by molecular beam epitaxy. Noticeable improvement of the photoluminescence (PL) was observed by adding the dilute Sb. The QWs showed an increased PL intensity and narrow linewidth of 23 meV for the wavelength range up to 1180 nm. An atomic force microscope study showed a flattened surface morphology by the introduction of the Sb. Broad-area lasers with a GaInAsSb/GaAs double-QW active layer emitting at 1170 nm showed a low threshold current density of 125 A/cm 2 per well for an infinite cavity length

Research progress on laser surface modification of titanium alloys

International Nuclear Information System (INIS)

Tian, Y.S.; Chen, C.Z.; Li, S.T.; Huo, Q.H.

2005-01-01

Recent developments on laser surface modification of titanium and its alloys are reviewed. Due to the intrinsic properties of high coherence and directionality, laser beam can be focus onto metallic surface to perform a broad range of treatments such as remelting, alloying and cladding, which are used to improve the wear and corrosion resistance of titanium alloys. In addition, the fabrication of bioactive films on the surface of titanium alloys to improve their biocompatibility can be performed by the method of laser ablation deposition. The effect of some laser processing parameters on the resulting surface properties of titanium alloys is discussed. The problems to be solved and the prospects in the field of laser modification of titanium and its alloys are elucidated

Corrosion behaviour of laser surface melted magnesium alloy AZ91D

International Nuclear Information System (INIS)

Taltavull, C.; Torres, B.; Lopez, A.J.; Rodrigo, P.; Otero, E.; Atrens, A.; Rams, J.

2014-01-01

A high power diode laser (HPDL) was used to produce laser surface melting (LSM) treatments on the surface of the Mg alloy AZ91D. Different treatments with different microstructures were produced by varying the laser-beam power and laser-scanning speed. Corrosion evaluation, using hydrogen evolution and electrochemical measurements, led to a relationship between microstructure and corrosion. Most corrosion rates for LSM treated specimens were within the scatter of the as-received AZ91D, whereas some treatments gave higher corrosion rates and some of the samples had corrosion rates lower than the average of the corrosion rate for AZ91D. There were differences in corroded surface morphology. Nevertheless laser treatments introduced surface discontinuities, which masked the effect of the microstructure. Removing these surface defects decreased the corrosion rate for the laser-treated samples. - Highlights: • Corrosion behavior of AZ91D Mg alloys is intimately related with its microstructure. • Laser surface melting treatments allows surface modification of the microstructure. • Different laser parameters can achieve different microstructures. • Controlling laser parameters can produce different corrosion rates and morphologies. • Increase of surface roughness due to laser treatment is relevant to the corrosion rate

Micro-Bulges Investigation on Laser Modified Tool Steel Surface

Directory of Open Access Journals (Sweden)

Fauzun Fazliana

2017-01-01

Full Text Available This paper presents micro-bulges investigation on laser modified tool steel. The aim of this study is to understand the effect of laser irradiance and interaction time on surface morphology configuration. An Nd:YAG laser system with TEM00 pulse processing mode was used to modify the samples. Metallographic study shows samples were analyzed for focal position effect on melted pool size, angle of peaks geometry and laser modified layer depth. Surface morphology were analyzed for surface roughness. Laser modified layer shows depth ranged between 42.22 and 420.12 μm. Angle of peak bulge was found to be increase with increasing peak power. The maximum roughness, Ra, achieved in modified H13 was 21.10 μm. These findings are significant to enhance surface properties of laser modified steel and cast iron for dies and high wear resistance applications.

In-building Unlicensed WiFi Band OFDM Signal Distribution over MMF&BIF Using VCSEL

DEFF Research Database (Denmark)

Deng, Lei; Jensen, Jesper Bevensee; Yu, Xianbin

2011-01-01

For in-building applications, an OFDM-VCSEL RoF system operating in unlicensed WiFi band is experimentally tested using MMF and bend insensitive fiber (BIF). A spectral efficiency of 4.32 bit/s/Hz with 0.9 Gbps data rate is achieved....

Controllable superhydrophobic aluminum surfaces with tunable adhesion fabricated by femtosecond laser

Science.gov (United States)

Song, Yuxin; Wang, Cong; Dong, Xinran; Yin, Kai; Zhang, Fan; Xie, Zheng; Chu, Dongkai; Duan, Ji'an

2018-06-01

In this study, a facile and detailed strategy to fabricate superhydrophobic aluminum surfaces with controllable adhesion by femtosecond laser ablation is presented. The influences of key femtosecond laser processing parameters including the scanning speed, laser power and interval on the wetting properties of the laser-ablated surfaces are investigated. It is demonstrated that the adhesion between water and superhydrophobic surface can be effectively tuned from extremely low adhesion to high adhesion by adjusting laser processing parameters. At the same time, the mechanism is discussed for the changes of the wetting behaviors of the laser-ablated surfaces. These superhydrophobic surfaces with tunable adhesion have many potential applications, such as self-cleaning surface, oil-water separation, anti-icing surface and liquid transportation.

High-energy terahertz wave parametric oscillator with a surface-emitted ring-cavity configuration.

Science.gov (United States)

Yang, Zhen; Wang, Yuye; Xu, Degang; Xu, Wentao; Duan, Pan; Yan, Chao; Tang, Longhuang; Yao, Jianquan

2016-05-15

A surface-emitted ring-cavity terahertz (THz) wave parametric oscillator has been demonstrated for high-energy THz output and fast frequency tuning in a wide frequency range. Through the special optical design with a galvano-optical scanner and four-mirror ring-cavity structure, the maximum THz wave output energy of 12.9 μJ/pulse is achieved at 1.359 THz under the pump energy of 172.8 mJ. The fast THz frequency tuning in the range of 0.7-2.8 THz can be accessed with the step response of 600 μs. Moreover, the maximum THz wave output energy from this configuration is 3.29 times as large as that obtained from the conventional surface-emitted THz wave parametric oscillator with the same experimental conditions.

On the surface topography of ultrashort laser pulse treated steel surfaces

International Nuclear Information System (INIS)

Vincenc Obona, J.; Ocelík, V.; Skolski, J.Z.P.; Mitko, V.S.; Römer, G.R.B.E.; Huis in’t Veld, A.J.; De Hosson, J.Th.M.

2011-01-01

This paper concentrates on observations of the surface topography by scanning electron microscopy (SEM) on alloyed and stainless steels samples treated by ultrashort laser pulses with duration of 210 fs and 6.7 ps. Globular-like and jet-like objects were found depending on the various levels of the fluence applied. It is shown that these features appear due to solid-liquid and liquid-gas transitions within surface layer irradiated by intense laser light. The observations are confronted to the theory of short-pulsed laser light-matter interactions, including interference, excitation of electrons, electron-phonon coupling as well as subsequent ablation. It is shown that the orientation of small ripples does not always depend on the direction of the polarization of laser light.

Two-dimensional optoelectronic interconnect-processor and its operational bit error rate

Science.gov (United States)

Liu, J. Jiang; Gollsneider, Brian; Chang, Wayne H.; Carhart, Gary W.; Vorontsov, Mikhail A.; Simonis, George J.; Shoop, Barry L.

2004-10-01

Two-dimensional (2-D) multi-channel 8x8 optical interconnect and processor system were designed and developed using complementary metal-oxide-semiconductor (CMOS) driven 850-nm vertical-cavity surface-emitting laser (VCSEL) arrays and the photodetector (PD) arrays with corresponding wavelengths. We performed operation and bit-error-rate (BER) analysis on this free-space integrated 8x8 VCSEL optical interconnects driven by silicon-on-sapphire (SOS) circuits. Pseudo-random bit stream (PRBS) data sequence was used in operation of the interconnects. Eye diagrams were measured from individual channels and analyzed using a digital oscilloscope at data rates from 155 Mb/s to 1.5 Gb/s. Using a statistical model of Gaussian distribution for the random noise in the transmission, we developed a method to compute the BER instantaneously with the digital eye-diagrams. Direct measurements on this interconnects were also taken on a standard BER tester for verification. We found that the results of two methods were in the same order and within 50% accuracy. The integrated interconnects were investigated in an optoelectronic processing architecture of digital halftoning image processor. Error diffusion networks implemented by the inherently parallel nature of photonics promise to provide high quality digital halftoned images.

Cascade laser applications: trends and challenges

Science.gov (United States)

d'Humières, B.; Margoto, Éric; Fazilleau, Yves

2016-03-01