Modeling of circular-grating surface-emitting lasers

Science.gov (United States)

Shams-Zadeh-Amiri, Ali M.

Grating-coupled surface-emitting lasers became an area of growing interest due to their salient features. Emission from a broad area normal to the wafer surface, makes them very well suited in high power applications and two- dimensional laser arrays. These new possibilities have caused an interest in different geometries to fully develop their potential. Among them, circular-grating lasers have the additional advantage of producing a narrow beam with a circular cross section. This special feature makes them ideal for coupling to optical fibers. All existing theoretical models dealing with circular- grating lasers only consider first-order gratings, or second-order gratings, neglecting surface emission. In this thesis, the emphasis is to develop accurate models describing the laser performance by considering the radiation field. Toward this aim, and due to the importance of the radiation modes in surface-emitting structures, a theoretical study of these modes in multilayer planar structures has been done in a rigorous and systematic fashion. Problems like orthogonality of the radiation modes have been treated very accurately. We have considered the inner product of radiation modes using the distribution theory. Orthogonality of degenerate radiation modes is an important issue. We have examined its validity using the transfer matrix method. It has been shown that orthogonality of degenerate radiation modes in a very special case leads to the Brewster theorem. In addition, simple analytical formulas for the normalization of radiation modes have been derived. We have shown that radiation modes can be handled in a much easier way than has been thought before. A closed-form spectral dyadic Green's function formulation of multilayer planar structures has been developed. In this formulation, both rectangular and cylindrical structures can be treated within the same mathematical framework. The Hankel transform of some auxiliary functions defined on a circular aperture has

Transverse and polarization effects in index-guided vertical-cavity surface-emitting lasers

International Nuclear Information System (INIS)

Torre, M. S.; Masoller, C.; Mandel, Paul

2006-01-01

We study numerically the polarization dynamics of vertical-cavity surface-emitting lasers (VCSEL's) operating in the fundamental transverse mode. We use an extension of the spin-flip model that not only accounts for the vector nature of the laser field, but also considers spatial transverse effects. The model assumes two orthogonal, linearly polarized fields, which are coupled to two carrier populations, associated with different spin sublevels of the conduction and valence bands in the quantum-well active region. Spatial effects are taken into account by considering transverse profiles for the two polarizations, for the two carrier populations, and for the carrier diffusion. The optical profile is the LP 01 mode, suitable for describing index-guided VCSEL's with cylindrical symmetry emitting on the fundamental transverse mode for both polarizations. We find that in small-active-region VCSEL's, fast carrier diffusion induces self-sustained oscillations of the total laser output, which are not present in larger-area devices or with slow carrier diffusion. These self-pulsations appear close to threshold, and, as the injection current increases, they grow in amplitude; however, there is saturation and the self-pulsations disappear at higher injection levels. The dependence of the oscillation amplitude on various laser parameters is investigated, and the results are found to be in good qualitative agreement with those reported by Van der Sande et al. [Opt. Lett. 29, 53 (2004)], based on a rate-equation model that takes into account transverse inhomogeneities through an intensity-dependent confinement factor

Perovskite Materials for Light-Emitting Diodes and Lasers.

Science.gov (United States)

Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

2016-08-01

Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

VCSELs Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers

CERN Document Server

2013-01-01

The huge progress which has been achieved in the field is covered here, in the first comprehensive monograph on vertical-cavity surface-emitting lasers (VCSELs) since eight years. Apart from chapters reviewing the research field and the laser fundamentals, there are comprehensive updates on red and blue emitting VCSELs, telecommunication VCSELs, optical transceivers, and parallel-optical links for computer interconnects. Entirely new contributions are made to the fields of vectorial three-dimensional optical modeling, single-mode VCSELs, polarization control, polarization dynamics, very-high-speed design, high-power emission, use of high-contrast gratings, GaInNAsSb long-wavelength VCSELs, optical video links, VCSELs for optical mice and sensing, as well as VCSEL-based laser printing. The book appeals to researchers, optical engineers and graduate students.

Laser marking method and device

International Nuclear Information System (INIS)

Okazaki, Yuki; Aoki, Nobutada; Mukai, Narihiko; Sano, Yuji; Yamamoto, Seiji.

1997-01-01

An object is disposed in laser beam permeating liquid or gaseous medium. Laser beams such as CW laser or pulse laser oscillated from a laser device are emitted to the object to apply laser markings with less degradation of identification and excellent corrosion resistance on the surface of the object simply and easily. Upon applying the laser markings, a liquid or gas as a laser beam permeating medium is blown onto the surface of the object, or the liquid or gas in the vicinity of the object is sucked, the laser beam-irradiated portion on the surface can be cooled positively. Accordingly, the laser marking can be formed on the surface of the object with less heat affection to the object. In addition, if the content of a nitrogen gas in the laser beam permeating liquid medium is reduced by degassing to lower than a predetermined value, or the laser beam permeating gaseous medium is formed by an inert gas, a laser marking having high corrosion resistance and reliability can be formed on the surface of the objective member. (N.H.)

Reactive ion beam etching for microcavity surface emitting laser fabrication: technology and damage characterization

International Nuclear Information System (INIS)

Matsutani, A.; Tadokoro, T.; Koyama, F.; Iga, K.

1993-01-01

Reactive ion beam etching (RIBE) is an effective dry etching technique for the fabrication of micro-sized surface emitting (SE) lasers and optoelectronic devices. In this chapter, some etching characteristics for GaAs, InP and GaInAsP with a Cl 2 gas using an RIBE system are discussed. Micro-sized circular mesas including GaInAsP/InP multilayers with vertical sidewalls were fabricated. RIBE-induced damage in InP substrates was estimated by C-V and PL measurement. In addition, the removal of the induced damage by the second RIBE with different conditions for the InP wafer was proposed. The sidewall damage is characterized by photoluminescence emitted from the etched sidewall of a GaInAsP/InP DH wafer. (orig.)

Polymer-coated vertical-cavity surface-emitting laser diode vapor sensor

DEFF Research Database (Denmark)

Ansbæk, Thor; Nielsen, Claus Højgaard; Larsen, Niels Bent

2010-01-01

We report a new method for monitoring vapor concentration of volatile organic compounds using a vertical-cavity surface-emitting laser (VCSEL). The VCSEL is coated with a polymer thin film on the top distributed Bragg reflector (DBR). The analyte absorption is transduced to the electrical domain ...

2 W high efficiency PbS mid-infrared surface emitting laser

Science.gov (United States)

Ishida, A.; Sugiyama, Y.; Isaji, Y.; Kodama, K.; Takano, Y.; Sakata, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Zogg, H.

2011-09-01

High efficiency laser operation with output power exceeding 2 W was obtained for vertical external-cavity PbS based IV-VI compound surface emitting quantum-well structures. The laser showed external quantum efficiency as high as 16%. Generally, mid-infrared III-V or II-VI semiconductor laser operation utilizing interband electron transitions are restricted by Auger recombination and free carrier absorption. Auger recombination is much lower in the IV-VI semiconductors, and the free-carrier absorption is significantly reduced by an optically pumped laser structure including multi-step optical excitation layers.

In vitro performance of DIAGNOdent laser fluorescence device for dental calculus detection on human tooth root surfaces.

Science.gov (United States)

Rams, Thomas E; Alwaqyan, Abdulaziz Y

2017-10-01

This study assessed the reproducibility of a red diode laser device, and its capability to detect dental calculus in vitro on human tooth root surfaces. On each of 50 extracted teeth, a calculus-positive and calculus-free root surface was evaluated by two independent examiners with a low-power indium gallium arsenide phosphide diode laser (DIAGNOdent) fitted with a periodontal probe-like sapphire tip and emitting visible red light at 655 nm wavelength. Laser autofluorescence intensity readings of examined root surfaces were scored on a 0-99 scale, with duplicate assessments performed using the laser probe tip directed both perpendicular and parallel to evaluated tooth root surfaces. Pearson correlation coefficients of untransformed measurements, and kappa analysis of data dichotomized with a >40 autofluorescence intensity threshold, were calculated to assess intra- and inter-examiner reproducibility of the laser device. Mean autofluorescence intensity scores of calculus-positive and calculus-free root surfaces were evaluated with the Student's t -test. Excellent intra- and inter-examiner reproducibility was found for DIAGNOdent laser autofluorescence intensity measurements, with Pearson correlation coefficients above 94%, and kappa values ranging between 0.96 and 1.0, for duplicate readings taken with both laser probe tip orientations. Significantly higher autofluorescence intensity values were measured when the laser probe tip was directed perpendicular, rather than parallel, to tooth root surfaces. However, calculus-positive roots, particularly with calculus in markedly-raised ledges, yielded significantly greater mean DIAGNOdent laser autofluorescence intensity scores than calculus-free surfaces, regardless of probe tip orientation. DIAGNOdent autofluorescence intensity values >40 exhibited a stronger association with calculus (36.6 odds ratio) then measurements of ≥5 (20.1 odds ratio) when the laser probe tip was advanced parallel to root surfaces. Excellent

Recent Advances in Conjugated Polymers for Light Emitting Devices

Science.gov (United States)

AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

Sub-monolayer dot vertical-cavity surface-emitting lasers

International Nuclear Information System (INIS)

Blokhin, S.A.; Maleev, N.A.; Kuz'menkov, A.G.

2006-01-01

Vertical-cavity surface-emitting lasers (VCSELs) based on submonolayer InGaAs quantum-dot active region and doped with AlGaAs/GaAs distributed Bragg reflectors were grown by molecular beam epitaxy. 3 μm aperture single-mode VCSELs demonstrate lasing at 980 nm with threshold current of 0.6 mA, maximum output power of 4 mW and external differential efficiency as high as 68%. Ultimately low internal optical losses were measured for these multimode sub-monolayer quantum dot VCSELs [ru

Transverse mode selection in vertical-cavity surface-emitting lasers via deep impurity-induced disordering

Science.gov (United States)

O'Brien, Thomas R.; Kesler, Benjamin; Dallesasse, John M.

2017-02-01

Top emission 850-nm vertical-cavity surface-emitting lasers (VCSELs) demonstrating transverse mode selection via impurity-induced disordering (IID) are presented. The IID apertures are fabricated via closed ampoule zinc diffusion. A simple 1-D plane wave model based on the intermixing of Group III atoms during IID is presented to optimize the mirror loss of higher-order modes as a function of IID strength and depth. In addition, the impact of impurity diffusion into the cap layer of the lasers is shown to improve contact resistance. Further investigation of the mode-dependent characteristics of the device imply an increase in the thermal impedance associated with the fraction of IID contained within the oxide aperture. The optimization of the ratio of the IID aperture to oxide aperture is experimentally determined. Single fundamental mode output of 1.6 mW with 30 dBm side mode suppression ratio is achieved by a 3.0 μm oxide-confined device with an IID aperture of 1.3 μm indicating an optimal IID aperture size of 43% of the oxide aperture.

Proton irradiation effects in oxide-confined vertical cavity surface emitting laser (VCSEL) diodes

International Nuclear Information System (INIS)

Barnes, C.E.; Swift, G.M.; Guertin, S.; Schwank, J.R.; Armendariz, M.G.; Hash, G.L.; Choquette, K.D.

1999-01-01

Vertical cavity surface emitting laser (VCSEL) diodes are employed as the emitter portion of opto-couplers that are used in space applications. Proton irradiation studies on VCSELs were performed at the Indiana University cyclotron facility. The beam energy was set at 192 MeV, the beam current was 200 nA that is equivalent to a flux of approximately 1*10 11 protons/cm 2 .s. We conclude that the oxide confined VCSELs examined in this study show more than sufficient radiation hardness for nearly all space applications. The observed proton-induced decreases in light output and the corresponding increases in laser threshold current can be explained in terms of proton-induced displacement damage which introduces non-radiative recombination centers in the active region of the lasers and causes a decrease in laser efficiency. These radiation effects accentuate the detrimental thermal effects observed at high currents. We also note that forward bias annealing is effective in these devices in producing at least partial recovery of the light output, and that this may be a viable hardness assurance technique during a flight mission. (A.C.)

Smartphone-Driven Low-Power Light-Emitting Device

Directory of Open Access Journals (Sweden)

Hea-Ja An

2017-01-01

Full Text Available Low-level light (laser therapy (LLLT has been widely researched in the recent past. Existing LLLT studies were performed based on laser. Recently, studies using LED have increased. This study presents a smartphone-driven low-power light-emitting device for use in colour therapy as an alternative medicine. The device consists of a control unit and a colour probe. The device is powered by and communicates with a smartphone using USB On-The-Go (OTG technology. The control unit controls emitting time and intensity of illumination with the configuration value of a smartphone application. Intensity is controlled by pulse width modulation (PWM without feedback. A calibration is performed to resolve a drawback of no feedback. To calibrate, intensity is measured in every 10 percent PWM output. PWM value is linearly calibrated to obtain accurate intensity. The device can control the intensity of illumination, and so, it can find application in varied scenarios.

High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

Science.gov (United States)

Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.

2018-01-01

The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

Steady-state characteristics of lateral p-n junction vertical-cavity surface-emitting lasers

Science.gov (United States)

Ryzhii, V.; Tsutsui, N.; Khmyrova, I.; Ikegami, T.; Vaccaro, P. O.; Taniyama, H.; Aida, T.

2001-09-01

We developed an analytical device model for lateral p-n junction vertical-cavity surface-emitting lasers (LJVCSELs) with a quantum well active region. The model takes into account the features of the carrier injection, transport, and recombination in LJVCSELs as well as the features of the photon propagation in the cavity. This model is used for the calculation and analysis of the LJVCSEL steady-state characteristics. It is shown that the localization of the injected electrons primarily near the p-n junction and the reabsorption of lateral propagating photons significantly effects the LJVCSELs performance, in particular, the LJVCSEL threshold current and power-current characteristics. The reincarnation of electrons and holes due to the reabsorption of lateral propagating photons can substantially decrease the threshold current.

Optoelectronic integrated circuits utilising vertical-cavity surface-emitting semiconductor lasers

International Nuclear Information System (INIS)

Zakharov, S D; Fyodorov, V B; Tsvetkov, V V

1999-01-01

Optoelectronic integrated circuits with additional optical inputs/outputs, in which vertical-cavity surface-emitting (VCSE) lasers perform the data transfer functions, are considered. The mutual relationship and the 'affinity' between optical means for data transfer and processing, on the one hand, and the traditional electronic component base, on the other, are demonstrated in the case of implementation of three-dimensional interconnects with a high transmission capacity. Attention is drawn to the problems encountered when semiconductor injection lasers are used in communication lines. It is shown what role can be played by VCSE lasers in solving these problems. A detailed analysis is made of the topics relating to possible structural and technological solutions in the fabrication of single lasers and of their arrays, and also of the problems hindering integrating of lasers into emitter arrays. Considerable attention is given to integrated circuits with optoelectronic smart pixels. Various technological methods for vertical integration of GaAs VCSE lasers with the silicon substrate of a microcircuit (chip) are discussed. (review)

Vertical-cavity surface-emitting laser vapor sensor using swelling polymer reflection modulation

DEFF Research Database (Denmark)

Ansbæk, Thor; Nielsen, Claus Højgård; Dohn, Søren

2012-01-01

Vapor detection using a low-refractive index polymer for reflection modulation of the top mirror in a vertical-cavity surface-emitting laser (VCSEL) is demonstrated. The VCSEL sensor concept presents a simple method to detect the response of a sensor polymer in the presence of volatile organic...

Operation of a novel hot-electron vertical-cavity surface-emitting laser

Science.gov (United States)

Balkan, Naci; O'Brien-Davies, Angela; Thoms, A. B.; Potter, Richard J.; Poolton, Nigel; Adams, Michael J.; Masum, J.; Bek, Alpan; Serpenguzel, Ali; Aydinli, Atilla; Roberts, John S.

1998-07-01

The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga1-xAlxAs p- n junction. It utilizes hot electron transport parallel to the layers and injection of hot electron hole pairs into the quantum well through a combination of mechanisms including tunnelling, thermionic emission and diffusion of `lucky' carriers. Super Radiant HELLISH-1 is an advanced structure incorporating a lower distributed Bragg reflector (DBR). Combined with the finite reflectivity of the upper semiconductor-air interface reflectivity it defines a quasi- resonant cavity enabling emission output from the top surface with a higher spectral purity. The output power has increased by two orders of magnitude and reduced the full width at half maximum (FWHM) to 20 nm. An upper DBR added to the structure defines HELLISH-VCSEL which is currently the first operational hot electron surface emitting laser and lases at room temperature with a 1.5 nm FWHM. In this work we demonstrate and compare the operation of UB-HELLISH-1 and HELLISH-VCSEL using experimental and theoretical reflectivity spectra over an extensive temperature range.

Light emitting device having peripheral emissive region

Science.gov (United States)

Forrest, Stephen R

2013-05-28

Light emitting devices are provided that include one or more OLEDs disposed only on a peripheral region of the substrate. An OLED may be disposed only on a peripheral region of a substantially transparent substrate and configured to emit light into the substrate. Another surface of the substrate may be roughened or include other features to outcouple light from the substrate. The edges of the substrate may be beveled and/or reflective. The area of the OLED(s) may be relatively small compared to the substrate surface area through which light is emitted from the device. One or more OLEDs also or alternatively may be disposed on an edge of the substrate about perpendicular to the surface of the substrate through which light is emitted, such that they emit light into the substrate. A mode expanding region may be included between each such OLED and the substrate.

Ultrafast directional beam switching in coupled vertical-cavity surface-emitting lasers

International Nuclear Information System (INIS)

Ning, C. Z.; Goorjian, P.

2001-01-01

We propose a strategy to performing ultrafast directional beam switching using two coupled vertical-cavity surface-emitting lasers (VCSELs). The proposed strategy is demonstrated for two VCSELs of 5.6 μm in diameter placed about 1 μm apart from the edges, showing a switching speed of 42 GHz with a maximum far-field angle span of about 10 degree. [copyright] 2001 American Institute of Physics

The simulation of thermal characteristics of 980 nm vertical cavity surface emitting lasers

Science.gov (United States)

Fang, Tianxiao; Cui, Bifeng; Hao, Shuai; Wang, Yang

2018-02-01

In order to design a single mode 980 nm vertical cavity surface emitting laser (VCSEL), a 2 μm output aperture is designed to guarantee the single mode output. The effects of different mesa sizes on the lattice temperature, the output power and the voltage are simulated under the condition of continuous working at room temperature, to obtain the optimum process parameters of mesa. It is obtained by results of the crosslight simulation software that the sizes of mesa radius are between 9.5 to 12.5 μm, which cannot only obtain the maximum output power, but also improve the heat dissipation of the device. Project supported by the Beijing Municipal Eduaction Commission (No. PXM2016_014204_500018) and the Construction of Scientific and Technological Innovation Service Ability in 2017 (No. PXM2017_014204_500034).

Surface modification and characterization of indium-tin oxide for organic light-emitting devices.

Science.gov (United States)

Zhong, Z Y; Jiang, Y D

2006-10-15

In this work, we used different treatment methods (ultrasonic degreasing, hydrochloric acid treatment, and oxygen plasma) to modify the surfaces of indium-tin oxide (ITO) substrates for organic light-emitting devices. The surface properties of treated ITO substrates were studied by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), sheet resistance, contact angle, and surface energy measurements. Experimental results show that the ITO surface properties are closely related to the treatment methods, and the oxygen plasma is more efficient than the other treatments since it brings about smoother surfaces, lower sheet resistance, higher work function, and higher surface energy and polarity of the ITO substrate. Moreover, polymer light-emitting electrochemical cells (PLECs) with differently treated ITO substrates as device electrodes were fabricated and characterized. It is found that surface treatments of ITO substrates have a certain degree of influence upon the injection current, brightness, and efficiency, but hardly upon the turn-on voltages of current injection and light emission, which are in agreement with the measured optical energy gap of the electroluminescent polymer. The oxygen plasma treatment on the ITO substrate yields the best performance of PLECs, due to the improvement of interface formation and electrical contact of the ITO substrate with the polymer blend in the PLECs.

Surface patterning of multilayer graphene by ultraviolet laser irradiation in biomolecule sensing devices

Energy Technology Data Exchange (ETDEWEB)

Chang, Tien-Li, E-mail: tlchang@ntnu.edu.tw; Chen, Zhao-Chi

2015-12-30

Graphical abstract: - Highlights: • Direct UV laser irradiation on multilayer graphene was discussed. • Multilayer graphene with screen-printed process was presented. • Surface patterning of multilayer graphene at fluence threshold was investigated. • Electrical response of glucose in sensing devices can be studied. - Abstract: The study presents a direct process for surface patterning of multilayer graphene on the glass substrate as a biosensing device. In contrast to lithography with etching, the proposed process provides simultaneous surface patterning of multilayer graphene through nanosecond laser irradiation. In this study, the multilayer graphene was prepared by a screen printing process. Additionally, the wavelength of the laser beam was 355 nm. To perform the effective laser process with the small heat affected zone, the surface patterns on the sensing devices could be directly fabricated using the laser with optimal control of the pulse overlap at a fluence threshold of 0.63 J/cm{sup 2}. The unique patterning of the laser-ablated surface exhibits their electrical and hydrophilic characteristics. The hydrophilic surface of graphene-based sensing devices was achieved in the process with the pulse overlap of 90%. Furthermore, the sensing devices for controlling the electrical response of glucose by using glucose oxidase can be used in sensors in commercial medical applications.

Development of a compact vertical-cavity surface-emitting laser end-pumped actively Q-switched laser for laser-induced breakdown spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Li, Shuo; Chen, Rongzhang; Nelsen, Bryan; Chen, Kevin, E-mail: pec9@pitt.edu [Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15260 (United States); Liu, Lei; Huang, Xi; Lu, Yongfeng [Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States)

2016-03-15

This paper reports the development of a compact and portable actively Q-switched Nd:YAG laser and its applications in laser-induced breakdown spectroscopy (LIBS). The laser was end-pumped by a vertical-cavity surface-emitting laser (VCSEL). The cavity lases at a wavelength of 1064 nm and produced pulses of 16 ns with a maximum pulse energy of 12.9 mJ. The laser exhibits a reliable performance in terms of pulse-to-pulse stability and timing jitter. The LIBS experiments were carried out using this laser on NIST standard alloy samples. Shot-to-shot LIBS signal stability, crater profile, time evolution of emission spectra, plasma electron density and temperature, and limits of detection were studied and reported in this paper. The test results demonstrate that the VCSEL-pumped solid-state laser is an effective and compact laser tool for laser remote sensing applications.

Acetone vapor sensing using a vertical cavity surface emitting laser diode coated with polystyrene

DEFF Research Database (Denmark)

Ansbæk, Thor; Nielsen, Claus Højgaard; Larsen, Niels Bent

2009-01-01

We report theoretical and experimental on a new vapor sensor, using a single-mode vertical-cavity surface-emitting laser (VCSEL) coated with a polymer sensor coating, which can detect acetone vapor at a volume fraction of 2.5%. The sensor provides the advantage of standard packaging, small form...

A GaInAsP/InP Vertical Cavity Surface Emitting Laser for 1.5 m m operation

Science.gov (United States)

Sceats, R.; Balkan, N.; Adams, M. J.; Masum, J.; Dann, A. J.; Perrin, S. D.; Reid, I.; Reed, J.; Cannard, P.; Fisher, M. A.; Elton, D. J.; Harlow, M. J.

1999-04-01

We present the results of our studies concerning the pulsed operation of a bulk GaInAsP/InP vertical cavity surface emitting laser (VCSEL). The device is tailored to emit at around 1.5 m m at room temperature. The structure has a 45 period n-doped GaInAsP/InP bottom distributed Bragg reflector (DBR), and a 4 period Si/Al2O3 dielectric top reflector defining a 3-l cavity. Electroluminescence from a 16 m m diameter top window was measured in the pulsed injection mode. Spectral measurements were recorded in the temperature range between 125K and 240K. Polarisation, lasing threshold current and linewidth measurements were also carried out at the same temperatures. The threshold current density has a broad minimum at temperatures between 170K and 190K, (Jth=13.2 kA/cm2), indicating a good match between the gain and the cavity resonance in this temperature range. Maximum emitted power from the VCSEL is 0.18 mW at 180K.

Self-mixing interferometry in vertical-cavity surface-emitting lasers for nanomechanical cantilever sensing

DEFF Research Database (Denmark)

Larsson, David; Greve, Anders; Hvam, Jørn Märcher

2009-01-01

We have experimentally investigated self-mixing interference produced by the feedback of light from a polymer micrometer-sized cantilever into a vertical-cavity surface-emitting laser for sensing applications. In particular we have investigated how the visibility of the optical output power...... and the junction voltage depends on the laser injection current and the distance to the cantilever. The highest power visibility obtained from cantilevers without reflective coatings was 60%, resulting in a very high sensitivity of 45 mV/nm with a noise floor below 1.2 mV. Different detection schemes are discussed....

Fast pulsing dynamics of a vertical-cavity surface-emitting laser operating in the low-frequency fluctuation regime

International Nuclear Information System (INIS)

Sciamanna, M.; Rogister, F.; Megret, P.; Blondel, M.; Masoller, C.; Abraham, N. B.

2003-01-01

We analyze the dynamics of a vertical-cavity surface-emitting laser with optical feedback operating in the low-frequency fluctuation regime. By focusing on the fast pulsing dynamics, we show that the two linearly polarized modes of the laser exhibit two qualitatively different behaviors: they emit pulses in phase just after a power dropout and they emit pulses out of phase after the recovery process of the output power. As a consequence, two distinct statistical distributions of the fast pulsating total intensity are observed, either monotonically decaying from the noise level or peaked around the mean intensity value. We further show that gain self-saturation of the lasing transition strongly modifies the shape of the intensity distribution

Near-infrared light emitting device using semiconductor nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Supran, Geoffrey J.S.; Song, Katherine W.; Hwang, Gyuweon; Correa, Raoul Emile; Shirasaki, Yasuhiro; Bawendi, Moungi G.; Bulovic, Vladimir; Scherer, Jennifer

2018-04-03

A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.

Self-mixing interferometry in vertical-cavity surface-emitting lasers for nanomechanical cantilever sensing

Science.gov (United States)

Larsson, David; Greve, Anders; Hvam, Jørn M.; Boisen, Anja; Yvind, Kresten

2009-03-01

We have experimentally investigated self-mixing interference produced by the feedback of light from a polymer micrometer-sized cantilever into a vertical-cavity surface-emitting laser for sensing applications. In particular we have investigated how the visibility of the optical output power and the junction voltage depends on the laser injection current and the distance to the cantilever. The highest power visibility obtained from cantilevers without reflective coatings was ˜60%, resulting in a very high sensitivity of 45 mV/nm with a noise floor below 1.2 mV. Different detection schemes are discussed.

Blue laser diode (LD) and light emitting diode (LED) applications

International Nuclear Information System (INIS)

Bergh, Arpad A.

2004-01-01

The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography. As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc. Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity. Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Blue laser diode (LD) and light emitting diode (LED) applications

Energy Technology Data Exchange (ETDEWEB)

Bergh, Arpad A [Optoelectronics Industry Development Association (OIDA), 1133 Connecticut Avenue, NW, Suite 600, Washington, DC 20036-4329 (United States)

2004-09-01

The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography. As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc. Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity. Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

5-μm vertical external-cavity surface-emitting laser (VECSEL) for spectroscopic applications

Science.gov (United States)

Rahim, M.; Khiar, A.; Felder, F.; Fill, M.; Zogg, H.; Sigrist, M. W.

2010-08-01

Mid-IR tunable VECSELs (Vertical External-Cavity Surface-Emitting Lasers) emitting at 4-7 μm wavelengths and suitable for spectroscopic sensing applications are described. They are realized with lead-chalcogenide (IV-VI) narrow band gap materials. The active part, a single 0.6-2-μm thick PbTe or PbSe gain layer, is grown onto an epitaxial Bragg mirror consisting of two or three Pb1- y Eu y Te/BaF2 quarter-wavelength layer pairs. All layers are deposited by MBE in a single run employing a BaF2 or Si substrate, no further processing is needed. The cavity is completed with an external curved top mirror, which is again realized with an epitaxial Bragg structure. Pumping is performed optically with a 1.5-μm laser. Maximum output power for pulsed operation is currently up to >1 Wp at -173°C and >10 mW at 10°C. In continuous wave (CW) operation, 18 mW at 100 K are reached. Still higher operating temperatures and/or powers are expected with better heat-removal structures and better designs employing QW (Quantum-Wells). Advantages of mid-IR VECSELs compared to edge-emitting lasers are their very good beam quality (circular beam with 15 μm are accessible with Pb1- y X y Z (X=Sr, Eu, Sn, Z=Se, Te) and/or including QW.

Electrically driven surface plasmon light-emitting diodes

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Photodegradation and polarization properties of vertical external surface-emitting organic laser

International Nuclear Information System (INIS)

Leang, Tatiana

2014-01-01

Although organic solid-state dye lasers can provide wavelength tunability in the whole visible spectrum and offers perspectives of low-cost compact lasers, they are still limited by several drawbacks, especially photodegradation. The geometry of a Vertical External Cavity Surface-emitting Organic Laser (VECSOL) enables organic lasers to reach high energies, excellent conversion efficiencies and good beam quality, it also enables an external control on many parameters, a feature that we have used here to study the photodegradation phenomenon as well as some polarization properties of organic solid-state lasers. In the first part of this thesis, we studied the lifetime of the laser upon varying several parameters (pump pulse-width, repetition rate, output coupling,...) and we found that the intracavity laser intensity, independently of the pump intensity, had a major on photodegradation rate. Moreover, we observed that the profile of the laser beam was also degrading with time: while it is Gaussian in the beginning it gradually shifts to an annular shape. In the second part, we investigated the polarization properties of VECSOLs, with a special emphasis on fluorescence properties of some typical dyes used in lasers. The crucial role played by resonant non-radiative energy transfers between dye molecules (HOMO-FRET) is evidenced and enables explaining the observed fluorescence depolarization, compared to the expected limiting fluorescence anisotropy. Energy transfers happen to play a negligible role above laser threshold, as the organic laser beam is shown to be linearly polarized in a wide range of experimental conditions when excitation occurs in the first singlet state. (author) [fr

Radiation emitting devices act

International Nuclear Information System (INIS)

1970-01-01

This Act, entitled the Radiation Emitting Devices Act, is concerned with the sale and importation of radiation emitting devices. Laws relating to the sale, lease or import, labelling, advertising, packaging, safety standards and inspection of these devices are listed as well as penalties for any person who is convicted of breaking these laws

Continuously tunable monomode mid-infrared vertical external cavity surface emitting laser on Si

Science.gov (United States)

Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Hobrecker, F.; Zogg, H.

2010-10-01

A tunable PbTe based mid-infrared vertical external cavity surface emitting laser is described. The active part is a ˜1 μm thick PbTe layer grown epitaxially on a Bragg mirror on the Si-substrate. The cavity is terminated with a curved Si/SiO Bragg top mirror and pumped optically with a 1.55 μm laser. Cavity length is <100 μm in order that only one longitudinal mode is supported. By changing the cavity length, up to 5% wavelength continuous and mode-hop free tuning is achieved at fixed temperature. The total tuning extends from 5.6 to 4.7 μm at 100-170 K operation temperature.

Nonlinear dynamic behaviors of an optically injected vertical-cavity surface-emitting laser

International Nuclear Information System (INIS)

Li Xiaofeng; Pan Wei; Luo Bin; Ma Dong; Wang Yong; Li Nuohan

2006-01-01

Nonlinear dynamics of a vertical-cavity surface-emitting laser (VCSEL) with external optical injection are studied numerically. We consider a master-slave configuration where the dynamic characteristics of the slave are affected by the optical injection from the master, and we also establish the corresponding Simulink model. The period-doubling route as well as the period-halving route is observed, where the regular, double-periodic, and chaotic pulsings are found. By adjusting the injection strength properly, the laser can be controlled to work at a given state. The effects of frequency detuning on the nonlinear behaviors are also investigated in terms of the bifurcation diagrams of photon density with the frequency detuning. For weak injection case, the nonlinear dynamics shown by the laser are quite different when the value of frequency detuning varies contrarily (positive and negative direction). If the optical injection is strong enough, the slave can be locked by the master even though the frequency detuning is relatively large

Laterally injected light-emitting diode and laser diode

Science.gov (United States)

Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

2015-06-16

A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

Amplification of an Autodyne Signal in a Bistable Vertical-Cavity Surface-Emitting Laser with the Use of a Vibrational Resonance

Science.gov (United States)

Chizhevsky, V. N.

2018-01-01

For the first time, it is demonstrated experimentally that a vibrational resonance in a polarization-bistable vertical-cavity surface-emitting laser can be used to increase the laser response in autodyne detection of microvibrations from reflecting surfaces. In this case, more than 25-fold signal amplification is achieved. The influence of the asymmetry of the bistable potential on the microvibration-detection efficiency is studied.

Analysis of chemical degradation mechanism of phosphorescent organic light emitting devices by laser-desorption/ionization time-of-flight mass spectrometry

Energy Technology Data Exchange (ETDEWEB)

Rabelo de Moraes, Ines; Scholz, Sebastian; Luessem, Bjoern; Leo, Karl [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden (Germany)

2010-07-01

Phosphorescent organic light emitting diodes (OLEDs) have attracted much interest for their potential application in full color flat-panel displays and as an alternative lighting source. However, low efficiency, and the short operation lifetime, in particular in the case of blue emitting devices, are the major limitations for the current OLEDs commercialization. In order to overcome these limitations, a deep knowledge about the aging and the degradation mechanism is required. Our work focuses on the chemical degradation mechanism of different iridium based emitter materials like FIrpic (light blue) and Ir(ppy)3 (green), commonly used in OLEDs. For this purpose, the devices were aged by electrical driving until the luminance reached 6% of the initial luminance. The laser-desorption/ionization time-of-flight mass spectrometry was used to determine specific degradation pathways.

In vitro performance of DIAGNOdent laser fluorescence device for dental calculus detection on human tooth root surfaces

Directory of Open Access Journals (Sweden)

Thomas E. Rams

2017-10-01

Conclusions: Excellent intra- and inter-examiner reproducibility of autofluorescence intensity measurements was obtained with the DIAGNOdent laser fluorescence device on human tooth roots. Calculus-positive root surfaces exhibited significantly greater DIAGNOdent laser autofluorescence than calculus-free tooth roots, even with the laser probe tip directed parallel to root surfaces. These findings provide further in vitro validation of the potential utility of a DIAGNOdent laser fluorescence device for identifying dental calculus on human tooth root surfaces.

Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance

International Nuclear Information System (INIS)

Chai, G. M. T.; Hosea, T. J. C.; Fox, N. E.; Hild, K.; Ikyo, A. B.; Marko, I. P.; Sweeney, S. J.; Bachmann, A.; Arafin, S.; Amann, M.-C.

2014-01-01

We report angle dependent and temperature dependent (9 K–300 K) photo-modulated reflectance (PR) studies on vertical-cavity surface-emitting laser (VCSEL) structures, designed for 2.3 μm mid-infrared gas sensing applications. Changing the temperature allows us to tune the energies of the quantum well (QW) transitions relative to the VCSEL cavity mode (CM) energy. These studies show that this VCSEL structure has a QW-CM offset of 21 meV at room temperature. Consequently the QW ground-state transition comes into resonance with the CM at 220 ± 2 K. The results from these PR studies are closely compared with those obtained in a separate study of actual operating devices and show how the PR technique may be useful for device optimisation without the necessity of having first to process the wafers into working devices

Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance

Energy Technology Data Exchange (ETDEWEB)

Chai, G. M. T. [Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia); Hosea, T. J. C., E-mail: j.hosea@surrey.ac.uk [Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia); Advanced Technology Institute and Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Fox, N. E.; Hild, K.; Ikyo, A. B.; Marko, I. P.; Sweeney, S. J. [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Bachmann, A.; Arafin, S.; Amann, M.-C. [Walter Schottky Institut, Technische Universität Munchen, Am Coulombwall 4, D-85748 Garching (Germany)

2014-01-07

We report angle dependent and temperature dependent (9 K–300 K) photo-modulated reflectance (PR) studies on vertical-cavity surface-emitting laser (VCSEL) structures, designed for 2.3 μm mid-infrared gas sensing applications. Changing the temperature allows us to tune the energies of the quantum well (QW) transitions relative to the VCSEL cavity mode (CM) energy. These studies show that this VCSEL structure has a QW-CM offset of 21 meV at room temperature. Consequently the QW ground-state transition comes into resonance with the CM at 220 ± 2 K. The results from these PR studies are closely compared with those obtained in a separate study of actual operating devices and show how the PR technique may be useful for device optimisation without the necessity of having first to process the wafers into working devices.

Optical Injection Locking of Vertical Cavity Surface-Emitting Lasers: Digital and Analog Applications

Science.gov (United States)

Parekh, Devang

With the rise of mobile (cellphones, tablets, notebooks, etc.) and broadband wireline communications (Fiber to the Home), there are increasing demands being placed on transmitters for moving data from device to device and around the world. Digital and analog fiber-optic communications have been the key technology to meet this challenge, ushering in ubiquitous Internet and cable TV over the past 20 years. At the physical layer, high-volume low-cost manufacturing of semiconductor optoelectronic devices has played an integral role in allowing for deployment of high-speed communication links. In particular, vertical cavity surface emitting lasers (VCSEL) have revolutionized short reach communications and are poised to enter more markets due to their low cost, small size, and performance. However, VCSELs have disadvantages such as limited modulation performance and large frequency chirp which limits fiber transmission speed and distance, key parameters for many fiber-optic communication systems. Optical injection locking is one method to overcome these limitations without re-engineering the VCSEL at the device level. By locking the frequency and phase of the VCSEL by the direct injection of light from another laser oscillator, improved device performance is achieved in a post-fabrication method. In this dissertation, optical injection locking of VCSELs is investigated from an applications perspective. Optical injection locking of VCSELs can be used as a pathway to reduce complexity, cost, and size of both digital and analog fiber-optic communications. On the digital front, reduction of frequency chirp via bit pattern inversion for large-signal modulation is experimentally demonstrated showing up to 10 times reduction in frequency chirp and over 90 times increase in fiber transmission distance. Based on these results, a new reflection-based interferometric model for optical injection locking was established to explain this phenomenon. On the analog side, the resonance

Laser method of acoustical emission control from vibrating surfaces

Science.gov (United States)

Motyka, Zbigniew

2013-01-01

For limitation of the noise in environment, the necessity occurs of determining and location of sources of sounds emitted from surfaces of many machines and devices, assuring in effect the possibility of suitable constructional changes implementation, targeted at decreasing of their nuisance. In the paper, the results of tests and calculations are presented for plane surface sources emitting acoustic waves. The tests were realized with the use of scanning laser vibrometer which enabled remote registration and the spectral analysis of the surfaces vibrations. The known hybrid digital method developed for determination of sound wave emission from such surfaces divided into small finite elements was slightly modified by distinguishing the phase correlations between such vibrating elements. The final method being developed may find use in wide range of applications for different forms of vibrations of plane surfaces.

Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

Science.gov (United States)

Fill, Matthias; Debernardi, Pierluigi; Felder, Ferdinand; Zogg, Hans

2013-11-01

Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

Energy Technology Data Exchange (ETDEWEB)

Fill, Matthias [ETH Zurich, Laser Spectroscopy and Sensing Lab, 8093 Zurich (Switzerland); Phocone AG, 8005 Zurich (Switzerland); Debernardi, Pierluigi [IEIIT-CNR, Torino 10129 (Italy); Felder, Ferdinand [Phocone AG, 8005 Zurich (Switzerland); Zogg, Hans [ETH Zurich (Switzerland)

2013-11-11

Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

Compact electro-absorption modulator integrated with vertical-cavity surface-emitting laser for highly efficient millimeter-wave modulation

International Nuclear Information System (INIS)

Dalir, Hamed; Ahmed, Moustafa; Bakry, Ahmed; Koyama, Fumio

2014-01-01

We demonstrate a compact electro-absorption slow-light modulator laterally-integrated with an 850 nm vertical-cavity surface-emitting laser (VCSEL), which enables highly efficient millimeter-wave modulation. We found a strong leaky travelling wave in the lateral direction between the two cavities via widening the waveguide width with a taper shape. The small signal response of the fabricated device shows a large enhancement of over 55 dB in the modulation amplitude at frequencies beyond 35 GHz; thanks to the photon-photon resonance. A large group index of over 150 in a Bragg reflector waveguide enables the resonance at millimeter wave frequencies for 25 μm long compact modulator. Based on the modeling, we expect a resonant modulation at a higher frequency of 70 GHz. The resonant modulation in a compact slow-light modulator plays a significant key role for high efficient narrow-band modulation in the millimeter wave range far beyond the intrinsic modulation bandwidth of VCSELs.

Single-mode temperature and polarisation-stable high-speed 850nm vertical cavity surface emitting lasers

International Nuclear Information System (INIS)

Nazaruk, D E; Blokhin, S A; Maleev, N A; Bobrov, M A; Pavlov, M M; Kulagina, M M; Vashanova, K A; Zadiranov, Yu M; Ustinov, V M; Kuzmenkov, A G; Vasil'ev, A P; Gladyshev, A G; Blokhin, A A; Salut, 7 Larina Str, N Novgorod, 603950 (Russian Federation))" data-affiliation=" (JSV Salut, 7 Larina Str, N Novgorod, 603950 (Russian Federation))" >Fefelov, A G

2014-01-01

A new intracavity-contacted design to realize temperature and polarization-stable high-speed single-mode 850 nm vertical cavity surface emitting lasers (VCSELs) grown by molecular-beam epitaxy is proposed. Temperature dependences of static and dynamic characteristics of the 4.5 pm oxide aperture InGaAlAs VCSEL were investigated in detail. Due to optimal gain-cavity detuning and enhanced carrier localization in the active region the threshold current remains below 0.75 mA for the temperature range within 20-90°C, while the output power exceeds 1 mW up to 90°C. Single-mode operation with side-mode suppression ratio higher than 30 dB and orthogonal polarization suppression ratio more than 18 dB was obtained in the whole current and temperature operation range. Device demonstrates serial resistance less than 250 Ohm, which is rather low for any type of single-mode short- wavelength VCSELs. VCSEL demonstrates temperature robust high-speed operation with modulation bandwidth higher than 13 GHz in the entire temperature range of 20-90°C. Despite high resonance frequency the high-speed performance of developed VCSELs was limited by the cut-off frequency of the parasitic low pass filter created by device resistances and capacitances. The proposed design is promising for single-mode high-speed VCSEL applications in a wide spectral range

Evaluation of 3D laser device for characterizing shape and surface properties of aggregates used in pavements

CSIR Research Space (South Africa)

Anochie-Boateng, Joseph

2010-08-01

Full Text Available program for the 3D laser device using fifteen different spherical and twelve cubic shaped objects. The laser device was evaluated for accuracy and repeatability to compute aggregate surface area and volume properties. The results showed that the laser...

Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

Energy Technology Data Exchange (ETDEWEB)

Leonard, J. T., E-mail: jtleona01@gmail.com; Yonkee, B. P.; Cohen, D. A.; Megalini, L.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Lee, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2016-01-18

We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to selectively remove the multi-quantum well (MQW) region outside the aperture area, defined by an opaque metal mask. This PEC aperture (PECA) creates an air-gap in the passive area of the device, allowing one to achieve efficient electrical confinement within the aperture, while simultaneously achieving a large index contrast between core of the device (the MQW within the aperture) and the lateral cladding of the device (the air-gap formed by the PEC etch), leading to strong lateral confinement. Scanning electron microscopy and focused ion-beam analysis is used to investigate the precision of the PEC etch technique in defining the aperture. The fabricated single mode PECA VCSEL shows a threshold current density of ∼22 kA/cm{sup 2} (25 mA), with a peak output power of ∼180 μW, at an emission wavelength of 417 nm. The near-field emission profile shows a clearly defined single linearly polarized (LP) mode profile (LP{sub 12,1}), which is in contrast to the filamentary lasing that is often observed in III-nitride VCSELs. 2D mode profile simulations, carried out using COMSOL, give insight into the different mode profiles that one would expect to be displayed in such a device. The experimentally observed single mode operation is proposed to be predominantly a result of poor current spreading in the device. This non-uniform current spreading results in a higher injected current at the periphery of the aperture, which favors LP modes with high intensities near the edge of the aperture.

Upstream vertical cavity surface-emitting lasers for fault monitoring and localization in WDM passive optical networks

Science.gov (United States)

Wong, Elaine; Zhao, Xiaoxue; Chang-Hasnain, Connie J.

2008-04-01

As wavelength division multiplexed passive optical networks (WDM-PONs) are expected to be first deployed to transport high capacity services to business customers, real-time knowledge of fiber/device faults and the location of such faults will be a necessity to guarantee reliability. Nonetheless, the added benefit of implementing fault monitoring capability should only incur minimal cost associated with upgrades to the network. In this work, we propose and experimentally demonstrate a fault monitoring and localization scheme based on a highly-sensitive and potentially low-cost monitor in conjunction with vertical cavity surface-emitting lasers (VCSELs). The VCSELs are used as upstream transmitters in the WDM-PON. The proposed scheme benefits from the high reflectivity of the top distributed Bragg reflector (DBR) mirror of optical injection-locked (OIL) VCSELs to reflect monitoring channels back to the central office for monitoring. Characterization of the fault monitor demonstrates high sensitivity, low bandwidth requirements, and potentially low output power. The added advantage of the proposed fault monitoring scheme incurs only a 0.5 dB penalty on the upstream transmissions on the existing infrastructure.

Interband cascade light emitting devices based on type-II quantum wells

International Nuclear Information System (INIS)

Yang, Rui Q.; Lin, C.H.; Murry, S.J.

1997-01-01

The authors discuss physical processes in the newly developed type-II interband cascade light emitting devices, and review their recent progress in the demonstration of the first type-II interband cascade lasers and the observation of interband cascade electroluminescence up to room temperature in a broad mid-infrared wavelength region (extended to 9 μm)

Highly Selective Volatile Organic Compounds Breath Analysis Using a Broadly-Tunable Vertical-External-Cavity Surface-Emitting Laser.

Science.gov (United States)

Tuzson, Béla; Jágerská, Jana; Looser, Herbert; Graf, Manuel; Felder, Ferdinand; Fill, Matthias; Tappy, Luc; Emmenegger, Lukas

2017-06-20

A broadly tunable mid-infrared vertical-external-cavity surface-emitting laser (VECSEL) is employed in a direct absorption laser spectroscopic setup to measure breath acetone. The large wavelength coverage of more than 30 cm -1 at 3.38 μm allows, in addition to acetone, the simultaneous measurement of isoprene, ethanol, methanol, methane, and water. Despite the severe spectral interferences from water and alcohols, an unambiguous determination of acetone is demonstrated with a precision of 13 ppbv that is achieved after 5 min averaging at typical breath mean acetone levels in synthetic gas samples mimicking human breath.

Control of emitted light polarization in a 1310 nm dilute nitride spin-vertical cavity surface emitting laser subject to circularly polarized optical injection

Energy Technology Data Exchange (ETDEWEB)

Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Hurtado, A.; Al Seyab, R. K.; Henning, I. D.; Adams, M. J. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Korpijarvi, V.-M.; Guina, M. [Optoelectronics Research Centre (ORC), Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)

2014-11-03

We experimentally demonstrate the control of the light polarization emitted by a 1310 nm dilute nitride spin-Vertical Cavity Surface Emitting Laser (VCSEL) at room temperature. This is achieved by means of a combination of polarized optical pumping and polarized optical injection. Without external injection, the polarization of the optical pump controls that of the spin-VCSEL. However, the addition of the externally injected signal polarized with either left- (LCP) or right-circular polarization (RCP) is able to control the polarization of the spin-VCSEL switching it at will to left- or right-circular polarization. A numerical model has been developed showing a very high degree of agreement with the experimental findings.

Mid-infrared PbTe vertical external cavity surface emitting laser on Si-substrate with above 1 W output power

Science.gov (United States)

Rahim, M.; Fill, M.; Felder, F.; Chappuis, D.; Corda, M.; Zogg, H.

2009-12-01

Mid-infrared vertical external cavity surface emitting lasers (VECSELs) emitting above 1 W output power in pulsed mode and up to 17 mW in continuous mode at -172 °C were realized. Emission wavelength changes from 5 μm at -172 °C to 3.6 μm at 20 °C heat sink temperature. The active medium is a one wavelength thick PbTe layer grown by molecular beam epitaxy on a Si-substrate. It is followed by a 2.5 pair Pb1-yEuyTe/EuTe epitaxial Bragg mirror. The cavity is completed with an external curved Pb1-yEuyTe/BaF2 mirror. The VECSEL is optically pumped with 1.55 μm wavelength laser and In-soldered to Cu heat sink. No microstructural processing is needed.

Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

KAUST Repository

Frost, Thomas; Jahangir, Shafat; Stark, Ethan; Deshpande, Saniya; Hazari, Arnab Shashi; Zhao, Chao; Ooi, Boon S.; Bhattacharya, Pallab K.

2014-01-01

A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

KAUST Repository

Frost, Thomas

2014-08-13

A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

Ultra-thin titanium nanolayers for plasmon-assisted enhancement of bioluminescence of chloroplast in biological light emitting devices

Energy Technology Data Exchange (ETDEWEB)

Hsun Su, Yen [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Hsu, Chia-Yun; Chang, Chung-Chien [Science and Technology of Accelerator Light Source, Hsinchu 300, Taiwan (China); Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Tu, Sheng-Lung; Shen, Yun-Hwei [Department of Resource Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)

2013-08-05

Ultra-thin titanium films were deposited via ultra-high vacuum ion beam sputter deposition. Since the asymmetric electric field of the metal foil plane matches the B-band absorption of chlorophyll a, the ultra-thin titanium nanolayers were able to generate surface plasmon resonance, thus enhancing the photoluminescence of chlorophyll a. Because the density of the states of plasmon resonance increases, the enhancement of photoluminescence also rises. Due to the biocompatibility and inexpensiveness of titanium, it can be utilized to enhance the bioluminescence of chloroplast in biological light emitting devices, bio-laser, and biophotonics.

Self-sustained pulsation in the oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

International Nuclear Information System (INIS)

Kuzmenkov, A. G.; Ustinov, V. M.; Sokolovskii, G. S.; Maleev, N. A.; Blokhin, S. A.; Deryagin, A. G.; Chumak, S. V.; Shulenkov, A. S.; Mikhrin, S. S.; Kovsh, A. R.; McRobbie, A. D.; Sibbett, W.; Cataluna, M. A.; Rafailov, E. U.

2007-01-01

The authors report the observation of strong self-pulsations in molecular-beam epitaxy-grown oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots. At continuous-wave operation, self-pulsations with pulse durations of 100-300 ps and repetition rates of 0.2-0.6 GHz were measured. The average optical power of the pulsations was 0.5-1.0 mW at the laser continuous-wave current values of 1.5-2.5 mA

Laser decontamination device

International Nuclear Information System (INIS)

Michishita, Shizuo; Akagawa, Katsuhiko.

1997-01-01

One end of an optical fiber inserted into an inner cylinder is opposed to a wall surface to be decontaminated, and an opened top end of an intermediate cylinder circumferentially surrounding the inner cylinder is tightly in contact with the wall surface to be decontaminated, an open end of an outer cylinder circumferentially surrounding the intermediate cylinder is tightly in contact with the wall surface to be decontaminated. Dust removing holes are perforated in the vicinity of the top end of the intermediate cylinder while being in communication with the inside and the outside of the intermediate cylinder, and one end of an air supply tube is in communication with the space between the outer circumferential surface of the inner cylinder and the inner circumferential surface of the intermediate cylinder. The other end of the air supply tube is connected to an air supply device, one end of a sucking tube is in communication with the space between the outer circumferential surface of the intermediate cylinder and the inner circumferential surface of the outer cylinder, the other end of the sucking tube is connected to a sucking device, and the other end of the optical fiber is connected to a laser generation device. The laser generation device is operated while determining the air sucking amount increased than the air supply amount, the materials deposited on the wall surface are crushed and peeled off, and the peeled off materials are transferred by air flow to a filter and collected. (N.H.)

Considerations on the determining factors of the angular distribution of emitted particles in laser ablation

International Nuclear Information System (INIS)

Konomi, I.; Motohiro, T.; Kobayashi, T.; Asaoka, T.

2010-01-01

Simulations of particles which are emitted in laser ablation have been performed by the method of Direct Simulation Monte Carlo to investigate the deposition profiles of the emitted particles. The influences of the temperature, pressure and stream velocity of the initial evaporated layer formed during laser ablation process on the profile of the deposited film have been examined. It is found that the temperature gives a minor influence on the deposition profile, whereas the stream velocity and the pressure of the initial evaporated layer have a greater impact on the deposition profile. The energy in the direction of surface normal (E perpendicular ) and that in the parallel direction of the surface (E || ) are shown to increase and decrease, respectively after the laser irradiation due to collisions between the emitted particles, and this trend is magnified as the pressure increases. As a consequence, the stream velocity in the direction of surface normal increases with the increase in the pressure. A mechanism of the phenomenon that a metal with a lower sublimation energy shows a broader angular distribution of emitted particles is presented. It is suggested that low density of evaporated layer of a metal with a low sublimation energy at its melting point decreases the number of collisions in the layer, leading to the low stream velocity in the direction of surface normal, which results in the broader deposition profile of the emitted particles.

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

KAUST Repository

Leonard, J. T.

2016-03-01

We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

KAUST Repository

Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Shen, Chao; Margalith, T.; Ng, Tien Khee; Denbaars, S. P.; Ooi, Boon S.; Speck, J. S.; Nakamura, S.

2016-01-01

We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

Characterization of laser-tissue interaction processes by low-boiling emitted substances

Science.gov (United States)

Weigmann, Hans-Juergen; Lademann, Juergen; Serfling, Ulrike; Lehnert, W.; Sterry, Wolfram; Meffert, H.

1996-01-01

Main point in this study was the investigation of the gaseous and low-boiling substances produced in the laser plume during cw CO2 laser and XeCl laser irradiation of tissue by gas chromatography (GC)/mass spectrometry. The characteristic emitted amounts of chemicals were determined quantitatively using porcine muscular tissue. The produced components were used to determine the character of the chemical reaction conditions inside the interaction zone. It was found that the temperature, and the water content of the tissue are the main parameter determining kind and amount of the emitted substances. The relative intensity of the GC peak of benzene corresponds to a high temperature inside the interaction area while a relative strong methylbutanal peak is connected with a lower temperature which favors Maillard type reaction products. The water content of the tissue determines the extent of oxidation processes during laser tissue interaction. For that reason the moisture in the tissue is the most important parameter to reduce the emission of harmful chemicals in the laser plume. The same methods of investigation are applicable to characterize the interaction of a controlled and an uncontrolled rf electrosurgery device with tissue. The results obtained with model tissue are in agreement with the situation characteristic in laser surgery.

[A novel yellow organic light-emitting device].

Science.gov (United States)

Ma, Chen; Wang, Hua; Hao, Yu-Ying; Gao, Zhi-Xiang; Zhou, He-Feng; Xu, Bing-She

2008-07-01

The fabrication of a novel organic yellow-light-emitting device using Rhodamine B as dopant with double quantum-well (DQW) structure was introduced in the present article. The structure and thickness of this device is ITO/CuPc (6 nm) /NPB (20 nm) /Alq3 (3 nm)/Alq3 : Rhodamine B (3 nm) /Alq3 (3 nm) /Al q3 : Rhodamine B(3 nm) /Alq3 (30 nm) /Liq (5 nm)/Al (30 nm). With the detailed investigation of electroluminescence of the novel organic yellow-light-emitting device, the authors found that the doping concentration of Rhodamine B (RhB) had a very big influence on luminance and efficiency of the organic yellow-light-emitting device. When doping concentration of Rhodamine B (RhB) was 1.5 wt%, the organic yellow-light-emitting device was obtained with the maximum current efficiency of 1.526 cd x A(-1) and the maximum luminance of 1 309 cd x m(-2). It can be seen from the EL spectra of the devices that there existed energy transferring from Alq3 to RhB in the organic light-emitting layers. When the doping concentration of RhB increased, lambda(max) of EL spectra redshifted obviously. The phenomenon was attributed to the Stokes effect of quantum wells and self-polarization of RhB dye molecules.

INTERACTION OF LASER RADIATION WITH MATTER: Influence of a target on operation of a pulsed CO2 laser emitting microsecond pulses

Science.gov (United States)

Baranov, V. Yu; Dolgov, V. A.; Malyuta, D. D.; Mezhevov, V. S.; Semak, V. V.

1987-12-01

The profile of pulses emitted by a TEA CO2 laser with an unstable resonator changed as a result of interaction of laser radiation with the surface of a metal in the presence of a breakdown plasma. This influence of a target on laser operation and its possible applications in laser processing of materials are analyzed.

Commercial mode-locked vertical external cavity surface emitting lasers

Science.gov (United States)

Head, C. Robin; Paboeuf, David; Ortega, Tiago; Lubeigt, Walter; Bialkowski, Bartlomiej; Lin, Jipeng; Hempler, Nils; Maker, Gareth T.; Malcolm, Graeme P. A.

2018-02-01

This paper presents the latest efforts in the development of commercial optically-pumped semiconductor disk lasers (SDLs) at M Squared Lasers. Two types of SDLs are currently being developed: an ultrafast system and a continuous wave single frequency system under the names of Dragonfly and Infinite, respectively. Both offer a compact, low-cost, easy-to-use and maintenance-free tool for a range of growing markets including nonlinear microscopy and quantum technology. To facilitate consumer uptake of the SDL technology, the performance specifications aim to closely match the currently employed systems. An extended Dragonfly system is being developed targeting the nonlinear microscopy market, which typically requires 1-W average power pulse trains with pulse durations below 200 fs. The pulse repetition frequency (PRF) of the commonly used laser systems, typically Titanium-sapphire lasers, is 80 MHz. This property is particularly challenging for mode-locked SDLs which tend to operate at GHz repetition rates, due to their short upper state carrier lifetime. Dragonfly has found a compromise at 200 MHz to balance mode-locking instabilities with a low PRF. In the ongoing development of Dragonfly, additional pulse compression and nonlinear spectral broadening stages are used to obtain pulse durations as short as 130 fs with an average power of 0.85 W, approaching the required performance. A variant of the Infinite system was adapted to provide a laser source suitable for the first stage of Sr atom cooling at 461 nm. Such a source requires average powers of approximately 1 W with a sub-MHz linewidth. As direct emission in the blue is not a viable approach at this stage, an SDL emitting at 922 nm followed by an M Squared Lasers SolTiS ECD-X doubler is currently under development. The SDL oscillator delivered >1 W of single frequency (RMS frequency noise <150kHz) light at 922 nm.

Organic bistable light-emitting devices

Science.gov (United States)

Ma, Liping; Liu, Jie; Pyo, Seungmoon; Yang, Yang

2002-01-01

An organic bistable device, with a unique trilayer structure consisting of organic/metal/organic sandwiched between two outmost metal electrodes, has been invented. [Y. Yang, L. P. Ma, and J. Liu, U.S. Patent Pending, U.S. 01/17206 (2001)]. When the device is biased with voltages beyond a critical value (for example 3 V), the device suddenly switches from a high-impedance state to a low-impedance state, with a difference in injection current of more than 6 orders of magnitude. When the device is switched to the low-impedance state, it remains in that state even when the power is off. (This is called "nonvolatile" phenomenon in memory devices.) The high-impedance state can be recovered by applying a reverse bias; therefore, this bistable device is ideal for memory applications. In order to increase the data read-out rate of this type of memory device, a regular polymer light-emitting diode has been integrated with the organic bistable device, such that it can be read out optically. These features make the organic bistable light-emitting device a promising candidate for several applications, such as digital memories, opto-electronic books, and recordable papers.

Influence of ITO patterning on reliability of organic light emitting devices

International Nuclear Information System (INIS)

Wang, Zhaokui; Naka, Shigeki; Okada, Hiroyuki

2009-01-01

Indium tin oxide (ITO) films are widely used for a transparent electrode of organic light emitting devices (OLEDs) because of its excellent conductivity and transparency. Two types of ITO substrates with different surface roughness were selected to use as anode of OLEDs. In addition, two types of etching process of ITO substrate, particularly the etching time, were also carried out. It was found that the surface roughness and/or the etching process of ITO substrate strongly influenced on an edge of ITO surface, further affected the operating characteristics and reliability of devices.

A novel near real-time laser scanning device for geometrical determination of pleural cavity surface.

Science.gov (United States)

Kim, Michele M; Zhu, Timothy C

2013-02-02

During HPPH-mediated pleural photodynamic therapy (PDT), it is critical to determine the anatomic geometry of the pleural surface quickly as there may be movement during treatment resulting in changes with the cavity. We have developed a laser scanning device for this purpose, which has the potential to obtain the surface geometry in real-time. A red diode laser with a holographic template to create a pattern and a camera with auto-focusing abilities are used to scan the cavity. In conjunction with a calibration with a known surface, we can use methods of triangulation to reconstruct the surface. Using a chest phantom, we are able to obtain a 360 degree scan of the interior in under 1 minute. The chest phantom scan was compared to an existing CT scan to determine its accuracy. The laser-camera separation can be determined through the calibration with 2mm accuracy. The device is best suited for environments that are on the scale of a chest cavity (between 10cm and 40cm). This technique has the potential to produce cavity geometry in real-time during treatment. This would enable PDT treatment dosage to be determined with greater accuracy. Works are ongoing to build a miniaturized device that moves the light source and camera via a fiber-optics bundle commonly used for endoscopy with increased accuracy.

Enhanced quantum efficiency in blue-emitting polymer/dielectric nanolayer nanocomposite light-emitting devices

International Nuclear Information System (INIS)

Park, Jong Hyeok; Lim, Yong Taik; Park, O Ok; Yu, Jae-Woong; Kim, Jai Kyeong; Kim, Young Chul

2004-01-01

Light-emitting devices based on environmentally stable, blue-emitting polymer/dielectric nanolayer nanocomposites were fabricated by blending poly(di-octylfluorene) (PDOF) with organo-clay. By reducing the excimer formation that leads to long wavelength tails, the photoluminescence (PL) and electroluminescence (EL) color purity of the device was enhanced. When a conjugated polymer/dielectric nanolayer nanocomposite is applied to an EL device, we expect an electronic structure similar to the well-known quantum well in small nanodomains. The ratio of PDOF/organo-clay was regulated from 2:1 to 0.5:1 (w/w). The light-emitting device of 0.5:1 (w/w) blend demonstrated the highest quantum efficiency (QE), 0.72% (ph/el), which is ∼500 times higher value compared with that of the pure PDOF layer device. However, the driving voltage of the nanocomposite devices tended to increase with increasing organo-clay content

Surface plasmon enhanced organic light emitting diodes by gold nanoparticles with different sizes

Energy Technology Data Exchange (ETDEWEB)

Gao, Chia-Yuan; Chen, Ying-Chung [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chen, Kan-Lin [Department of Electronic Engineering, Fortune Institute of Technology, Kaohsiung, Taiwan (China); Huang, Chien-Jung, E-mail: chien@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan (China)

2015-11-30

Highlights: • Different varieties, sizes, and shapes for nanoparticles will generate different surface plasmon resonance effects in the devices. • The red-shift phenomenon for absorption peaks is because of an increasing contribution of higher-order plasmon modes for the larger gold nanoparticles. • The mobility of electrons in the electron-transport layer of organic light-emitting diodes is a few orders of magnitude lower than that of holes in the hole-transport layer of organic light-emitting diodes. - Abstract: The influence of gold nanoparticles (GNPs) with different sizes doped into (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)) (PEDOT:PSS) on the performance of organic light-emitting diodes is investigated in this study. The current efficiency of the device, at a current density of 145 mA/cm, with PEDOT:PSS doped with GNPs of 8 nm is about 1.57 times higher than that of the device with prime PEDOT:PSS because the absorption peak of GNPs is closest to the photoluminescence peak of the emission layer, resulting in maximum surface plasmon resonance effect in the device. In addition, the surface-enhanced Raman scattering spectroscopy also reveals the maximum surface plasmon resonance effect in the device when the mean particle size of GNPs is 8 nm.

A UWOC system based on a 6 m/5.2 Gbps 680 nm vertical-cavity surface-emitting laser

Science.gov (United States)

Li, Chung-Yi; Tsai, Wen-Shing

2018-02-01

This study proves that an underwater wireless optical communication (UWOC) based on a 6 m/5.2 Gbps 68 nm vertical-cavity surface-emitting laser (VCSEL)-based system is superior to a 405 nm UWOC system. This UWOC application is the first to use a VCSEL at approximately 680 nm. The experiment also proved that a 680 nm VCSEL has the same transmission distance as that of an approximately 405 nm laser diode. The 680 nm VCSEL has a 5.2 Gbps high transmission rate and can transmit up to 6 m. Thus, the setup is the best alternative solution for high-speed UWOC applications.

GaN light-emitting device based on ionic liquid electrolyte

Science.gov (United States)

Hirai, Tomoaki; Sakanoue, Tomo; Takenobu, Taishi

2018-06-01

Ionic liquids (ILs) are attractive materials for fabricating unique hybrid devices based on electronics and electrochemistry; thus, IL-gated transistors and organic light-emitting devices of light-emitting electrochemical cells (LECs) are investigated for future low-voltage and high-performance devices. In LECs, voltage application induces the formation of electrochemically doped p–n homojunctions owing to ion rearrangements in composites of semiconductors and electrolytes, and achieves electron–hole recombination for light emission at the homojunctions. In this work, we applied this concept of IL-induced electrochemical doping to the fabrication of GaN-based light-emitting devices. We found that voltage application to the layered IL/GaN structure accumulated electrons on the GaN surface owing to ion rearrangements and improved the conductivity of GaN. The ion rearrangement also enabled holes to be injected by the strong electric field of electric double layers on hole injection contacts. This simultaneous injection of holes and electrons into GaN mediated by ions achieves light emission at a low voltage of around 3.4 V. The light emission from the simple IL/GaN structure indicates the usefulness of an electrochemical technique in generating light emission with great ease of fabrication.

Surface displacement imaging by interferometry with a light emitting diode

International Nuclear Information System (INIS)

Dilhaire, Stefan; Grauby, Stephane; Jorez, Sebastien; Lopez, Luis David Patino; Rampnoux, Jean-Michel; Claeys, Wilfrid

2002-01-01

We present an imaging technique to measure static surface displacements of electronic components. A device is supplied by a transient current that creates a variation of temperature, thus a surface displacement. To measure the latter, a setup that is based on a Michelson interferometer is used. To avoid the phenomenon of speckle and the drawbacks inherent to it, we use a light emitting diode as the light source for the interferometer. The detector is a visible CCD camera that analyzes the optical signal containing the information of surface displacement of the device. Combining images, we extract the amplitude of the surface displacement. Out-of-plane surface-displacement images of a thermoelectric device are presented

Semiconductor lasers stability, instability and chaos

CERN Document Server

Ohtsubo, Junji

2017-01-01

This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

Novel Biomedical Device Utilizing Light-Emitting Nanostructures Developed

Science.gov (United States)

Scardelletti, Maximilian C.; Goldman, Rachel

2004-01-01

Sketches and chemical diagrams of state-of-the-art device and novel proposed device are presented. Current device uses a diode laser that emits into a fluorescent fluid only one wavelength and a photodetector diode that detects only one wavelength. Only one type of bacteria can be detected. The proposed device uses a quantum dot array that emits into a fluorescent fluid multiple wavelengths and an NIR 512 spectrometer that scans 0.8- to 1.7-mm wavelengths. Hundreds of different bacteria and viruses can be detected. A novel biomedical device is being developed at the NASA Glenn Research Center in cooperation with the University of Michigan. This device uses nano-structured quantum dots that emit light in the near-infrared (IR) region. The nanostructured quantum dots are used as a source and excite fluorochrome polymers coupled with antibodies that seek out and attach to specific bacteria and viruses. The fluorochrome polymers/antibodies fluoresce at specific wavelengths in the near-IR spectrum, but these wavelengths are offset from the excitation wavelength and can be detected with a tunable spectrometer. The device will be used to detect the presence of viruses and bacteria in simple fluids and eventually in more complex fluids, such as blood. Current state-of-the-art devices are limited to single bacteria or virus detection and a considerable amount of time and effort is required to prepare samples for analysis. Most importantly, the devices are quite large and cumbersome, which prohibits them from being used on the International Space Station and the space shuttles. This novel device uses nanostructured quantum dots which, through molecular beam epitaxy and highly selective annealing processes, can be developed into an illumination source that could potentially generate hundreds of specific wavelengths. As a result, this device will be able to excite hundreds of antibody/fluorochrome polymer combinations, which in turn could be used to detect hundreds of bacteria

Modular PbSrS/PbS mid-infrared vertical external cavity surface emitting laser on Si

Science.gov (United States)

Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Zogg, H.; Cao, D.; Kobayashi, S.; Yokoyama, T.; Ishida, A.

2011-07-01

A mid-infrared vertical external cavity surface emitting laser (VECSEL) based on undoped PbS is described herein. A 200 nm-thick PbS active layer embedded between PbSrS cladding layers forms a double heterostructure. The layers are grown on a lattice and thermal expansion mismatched Si-substrate. The substrate is placed onto a flat bottom Bragg mirror again grown on a Si substrate, and the VECSEL is completed with a curved top mirror. Pumping is done optically with a 1.55 μm laser diode. This leads to an extremely simple modular fabrication process. Lasing wavelengths range from 3-3.8 μm at 100-260 K heat sink temperature. The lowest threshold power is ˜210 mWp and highest output power is ˜250 mWp. The influence of the different recombination mechanism as well as free carrier absorption on the threshold power is modeled.

Salt-Doped Polymer Light-Emitting Devices

Science.gov (United States)

Gautier, Bathilde

Polymer Light-Emitting Electrochemical Cells (PLECs) are solid state devices based on the in situ electrochemical doping of the luminescent polymer and the formation of a p-n junction where light is emitted upon the application of a bias current or voltage. PLECs answer the drawbacks of polymer light-emitting diodes as they do not require an ultra-thin active layer nor are they reliant on low work function cathode materials that are air unstable. However, because of the dynamic nature of the doping, they suffer from slow response times and poor stability over time. Frozen-junction PLECs offer a solution to these drawbacks, yet they are impractical due to their sub-ambient operation temperature requirement. Our work presented henceforth aims to achieve room temperature frozen-junction PLECS. In order to do that we removed the ion solvating/transporting polymer from the active layer, resulting in a luminescent polymer combined solely with a salt sandwiched between an ITO electrode and an aluminum electrode. The resulting device was not expected to operate like a PLEC due to the absence of an ion-solvating and ion-transporting medium. However, we discovered that the polymer/salt devices could be activated by applying a large voltage bias, resulting in much higher current and luminance. More important, the activated state is quasi static. Devices based on the well-known orange-emitting polymer MEH-PPV displayed a luminance storage half-life of 150 hours when activated by forward bias (ITO biased positively with respect to the aluminum) and 200 hours when activated by reverse bias. More remarkable yet, devices based on a green co-polymer displayed no notable decay in current density or luminance even after being stored for 1200 hours at room temperature! PL imaging under UV excitation demonstrates the presence of doping. These devices are described herein along with an explanation of their operating mechanisms.

Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

2016-01-01

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

Energy Technology Data Exchange (ETDEWEB)

Lijuan Zou

2003-08-05

Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm{sup 2}, the optimal radiance R could reach 0.38 mW/cm{sup 2}, and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be {approx} 10{sup -5} cm{sup 2}/Vs and {approx} 10{sup -4} cm{sup 2}/Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces.

Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

International Nuclear Information System (INIS)

Lijuan Zou

2003-01-01

Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm 2 , the optimal radiance R could reach 0.38 mW/cm 2 , and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be ∼ 10 -5 cm 2 /Vs and ∼ 10 -4 cm 2 /Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces

Nickel doped indium tin oxide anode and effect on dark spot development of organic light-emitting devices

Energy Technology Data Exchange (ETDEWEB)

Hsu, C.M. [Southern Taiwan University, Department of Electro-Optical Engineering, 1 Nan-Tai St, Yung-Kang City, Tainan County 710, Taiwan (China)], E-mail: tedhsu@mail.stut.edu.tw; Kuo, C.S.; Hsu, W.C.; Wu, W.T. [Southern Taiwan University, Department of Electro-Optical Engineering, 1 Nan-Tai St, Yung-Kang City, Tainan County 710, Taiwan (China)

2009-01-01

This article demonstrated that introducing nickel (Ni) atoms into an indium tin oxide (ITO) anode could considerably decrease ITO surface roughness and eliminate the formation of dark spots of an organic light-emitting device (OLED). A dramatic drop in surface roughness from 6.52 nm of an conventional ITO to 0.46 nm of an 50 nm Ni(50 W)-doped ITO anode was observed, and this led to an improved lifetime performance of an Alq3 based OLED device attributed to reduced dark spots. Reducing thickness of Ni-doped ITO anode was found to worsen surface roughness. Meanwhile, the existence of Ni atoms showed little effect on deteriorating the light-emitting mechanism of OLED devices.

PbSe quantum well mid-infrared vertical external cavity surface emitting laser on Si-substrates

Science.gov (United States)

Fill, M.; Khiar, A.; Rahim, M.; Felder, F.; Zogg, H.

2011-05-01

Mid-infrared vertical external cavity surface emitting lasers based on PbSe/PbSrSe multi-quantum-well structures on Si-substrates are realized. A modular design allows growing the active region and the bottom Bragg mirror on two different Si-substrates, thus facilitating comparison between different structures. Lasing is observed from 3.3 to 5.1 μm wavelength and up to 52 °C heat sink temperature with 1.55 μm optical pumping. Simulations show that threshold powers are limited by Shockley-Read recombination with lifetimes as short as 0.1 ns. At higher temperatures, an additional threshold power increase occurs probably due to limited carrier diffusion length and carrier leakage, caused by an unfavorable band alignment.

Spectrum study of top-emitting organic light-emitting devices with micro-cavity structure

International Nuclear Information System (INIS)

Liu Xiang; Wei Fuxiang; Liu Hui

2009-01-01

Blue and white top-emitting organic light-emitting devices OLEDs with cavity effect have been fabricated. TBADN:3%DSAPh and Alq 3 :DCJTB/TBADN:TBPe/Alq 3 :C545 were used as emitting materials of microcavity OLEDs. On a patterned glass substrate, silver was deposited as reflective anode, and copper phthalocyanine (CuPc) layer as HIL and 4'-bis[N-(1-Naphthyl)- N-phenyl-amino]biphenyl (NPB) layer as HTL were made. Al/Ag thin films were made as semi-transparent cathode with a transmittance of about 30%. By changing the thickness of indium tin oxide ITO, deep blue with Commission Internationale de L'Eclairage chromaticity coordinates (CIEx, y) of (0.141, 0.049) was obtained on TBADN:3%DSAPh devices, and different color (red, blue and green) was obtained on Alq 3 :DCJTB/TBADN:TBPe/Alq 3 :C545 devices, full width at half maxima (FWHM) was only 17 nm. The spectral intensity and FWHM of emission in cavity devices have also been studied.

Exploiting broad-area surface emitting lasers to manifest the path-length distributions of finite-potential quantum billiards.

Science.gov (United States)

Yu, Y T; Tuan, P H; Chang, K C; Hsieh, Y H; Huang, K F; Chen, Y F

2016-01-11

Broad-area vertical-cavity surface-emitting lasers (VCSELs) with different cavity sizes are experimentally exploited to manifest the influence of the finite confinement strength on the path-length distribution of quantum billiards. The subthreshold emission spectra of VCSELs are measured to obtain the path-length distributions by using the Fourier transform. It is verified that the number of the resonant peaks in the path-length distribution decreases with decreasing the confinement strength. Theoretical analyses for finite-potential quantum billiards are numerically performed to confirm that the mesoscopic phenomena of quantum billiards with finite confinement strength can be analogously revealed by using broad-area VCSELs.

Continuous wave vertical cavity surface emitting lasers at 2.5 μm with InP-based type-II quantum wells

International Nuclear Information System (INIS)

Sprengel, S.; Andrejew, A.; Federer, F.; Veerabathran, G. K.; Boehm, G.; Amann, M.-C.

2015-01-01

A concept for electrically pumped vertical cavity surface emitting lasers (VCSEL) for emission wavelength beyond 2 μm is presented. This concept integrates type-II quantum wells into InP-based VCSELs with a buried tunnel junction as current aperture. The W-shaped quantum wells are based on the type-II band alignment between GaInAs and GaAsSb. The structure includes an epitaxial GaInAs/InP and an amorphous AlF 3 /ZnS distributed Bragg reflector as bottom and top (outcoupling) mirror, respectively. Continuous-wave operation up to 10 °C at a wavelength of 2.49 μm and a peak output power of 400 μW at −18 °C has been achieved. Single-mode emission with a side-mode suppression ratio of 30 dB for mesa diameters up to 14 μm is presented. The long emission wavelength and current tunability over a wavelength range of more than 5 nm combined with its single-mode operation makes this device ideally suited for spectroscopy applications

Quantum confined laser devices optical gain and recombination in semiconductors

CERN Document Server

Blood, Peter

2015-01-01

The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

Pulsed Nd:YAG laser deposition of indium tin oxide thin films in different gases and organic light emitting device applications

International Nuclear Information System (INIS)

Yong, T.Y.; Tou, T.Y.; Yow, H.K.; Safran, G.

2008-01-01

The microstructures, electrical and optical properties of indium-doped tin oxide (ITO) films, deposited on glass substrates in different background gases by a pulsed Nd:YAG laser, were characterized. The optimal pressure for obtaining the lowest resistivity in ITO thin film is inversely proportional to the molecular weight of the background gases, namely the argon (Ar), oxygen (O 2 ), nitrogen (N 2 ) and helium (He). While substrate heating to 250 deg. C decreased the ITO resistivity to -4 Ω cm, obtaining the optical transmittance of higher than 90% depended mainly on the background gas pressure for O 2 and Ar. Obtaining the lowest ITO resistivity, however, did not beget a high optical transmittance for ITO deposition in N 2 and He. Scanning electron microscope pictures show distinct differences in microstructures due to the background gas: nanostructures when using Ar and N 2 but polycrystalline for using O 2 and He. The ITO surface roughness varied with the deposition distance. The effects on the molecularly doped, single-layer organic light emitting device (OLED) operation and performance were also investigated. Only ITO thin films prepared in O 2 and Ar are suitable for the fabrication OLED with performance comparable to that fabricated on the commercially available, magnetron-sputtered ITO

Vertical Cavity Surface Emitting Laser for Operation at 1.5 µm with Integral AlGaInAs/InP Bragg mirrors

OpenAIRE

Linnik, M.; Christou, A.

2001-01-01

The design and performance of a low threshold selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) fabricated for operation at a wavelength of 1.55 µm is based on III-V quaternary semiconductor alloys and is grown by Molecular Beam Epitaxy technique. The theoretical investigation of the optical properties of the compound semiconductor alloys allows one to select the optimum materials for highly reflective Bragg mirrors. The simulation of the designed VCSEL performance has been ...

Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy

Science.gov (United States)

Wistey, Mark Allan

Fiber optics has revolutionized long distance communication and long haul networks, allowing unimaginable data speeds and noise-free telephone calls around the world for mere pennies per hour at the trunk level. But the high speeds of optical fiber generally do not extend to individual workstations or to the home, in large part because it has been difficult and expensive to produce lasers which emitted light at wavelengths which could take advantage of optical fiber. One of the most promising solutions to this problem is the development of a new class of semiconductors known as dilute nitrides. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows well-established processing techniques. More important, gallium arsenide allows the growth of vertical-cavity surface-emitting lasers (VCSELs), which can be grown in dense, 2D arrays on each wafer, providing tremendous economies of scale for manufacturing, testing, and packaging. Unfortunately, GaInNAs lasers have suffered from what has been dubbed the "nitrogen penalty," with high thresholds and low efficiency as the fraction of nitrogen in the semiconductor was increased. This thesis describes the steps taken to identify and essentially eliminate the nitrogen penalty. Protecting the wafer surface from plasma ignition, using an arsenic cap, greatly improved material quality. Using a Langmuir probe, we further found that the nitrogen plasma source produced a large number of ions which damaged the wafer during growth. The ions were dramatically reduced using deflection plates. Low voltage deflection plates were found to be preferable to high voltages, and simulations showed low voltages to be adequate for ion removal. The long wavelengths from dilute nitrides can be partly explained by wafer damage during growth. As a result of these studies, we demonstrated the first CW, room temperature lasers at wavelengths beyond 1.5mum on gallium arsenide, and the first GaInNAs(Sb) VCSELs beyond 1

GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

Science.gov (United States)

Lee, SeungGeun; Forman, Charles A.; Lee, Changmin; Kearns, Jared; Young, Erin C.; Leonard, John T.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

2018-06-01

We report the first demonstration of III–nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal–organic chemical vapor deposition (MOCVD). For the TJs, n++-GaN was grown on in-situ activated p++-GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of ∼15 mA (10 kA/cm2), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.

Tunable radiation emitting semiconductor device

NARCIS (Netherlands)

2009-01-01

A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

Light-emitting device test systems

Science.gov (United States)

McCord, Mark; Brodie, Alan; George, James; Guan, Yu; Nyffenegger, Ralph

2018-01-23

Light-emitting devices, such as LEDs, are tested using a photometric unit. The photometric unit, which may be an integrating sphere, can measure flux, color, or other properties of the devices. The photometric unit may have a single port or both an inlet and outlet. Light loss through the port, inlet, or outlet can be reduced or calibrated for. These testing systems can provide increased reliability, improved throughput, and/or improved measurement accuracy.

Si light-emitting device in integrated photonic CMOS ICs

Science.gov (United States)

Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

2017-07-01

The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

Efficient light emitting devices based on phosphorescent partially doped emissive layers

KAUST Repository

Yang, Xiaohui; Jabbour, Ghassan E.

2013-01-01

We report efficient organic light emitting devices employing an ultrathin phosphor emissive layer. The electroluminescent spectra of these devices can be tuned by introducing a low-energy emitting phosphor layer into the emission zone. Devices

Efficient light emitting devices based on phosphorescent partially doped emissive layers

KAUST Repository

Yang, Xiaohui

2013-05-29

We report efficient organic light emitting devices employing an ultrathin phosphor emissive layer. The electroluminescent spectra of these devices can be tuned by introducing a low-energy emitting phosphor layer into the emission zone. Devices with the emissive layer consisting of multiple platinum-complex/spacer layer cells show a peak external quantum efficiency of 18.1%, which is among the best EQE values for platinum-complex based light emitting devices. Devices with an ultrathin phosphor emissive layer show stronger luminance decay with the operating time compared to the counterpart devices having a host-guest emissive layer.

Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

Science.gov (United States)

McInerney, John G.

2016-03-01

Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

Pyridine Based Polymer Light-Emitting Devices

National Research Council Canada - National Science Library

Wang, Y

1997-01-01

...) as a hole transporting/electron blocking layer. This improves the device efficiency and brightness significantly due to the charge confinement and exciplex emission at the PVK/emitting polymer interface...

Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

KAUST Repository

Leonard, J. T.; Cohen, D. A.; Yonkee, B. P.; Farrell, R. M.; Margalith, T.; Lee, S.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

2015-01-01

© 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm²), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

KAUST Repository

Leonard, J. T.

2015-07-06

© 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm²), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

Active optical system for advanced 3D surface structuring by laser remelting

Science.gov (United States)

Pütsch, O.; Temmler, A.; Stollenwerk, J.; Willenborg, E.; Loosen, P.

2015-03-01

Structuring by laser remelting enables completely new possibilities for designing surfaces since material is redistributed but not wasted. In addition to technological advantages, cost and time benefits yield from shortened process times, the avoidance of harmful chemicals and the elimination of subsequent finishing steps such as cleaning and polishing. The functional principle requires a completely new optical machine technology that maintains the spatial and temporal superposition and manipulation of three different laser beams emitted from two laser sources of different wavelength. The optical system has already been developed and demonstrated for the processing of flat samples of hot and cold working steel. However, since particularly the structuring of 3D-injection molds represents an application example of high innovation potential, the optical system has to take into account the elliptical beam geometry that occurs when the laser beams irradiate a curved surface. To take full advantage of structuring by remelting for the processing of 3D surfaces, additional optical functionality, called EPS (elliptical pre-shaping) has to be integrated into the existing set-up. The development of the beam shaping devices not only requires the analysis of the mechanisms of the beam projection but also a suitable optical design. Both aspects are discussed in this paper.

Design and reliability analysis of a novel laser acupuncture device

Science.gov (United States)

Pan, Boan; Zhong, Fulin; Zhao, Ke; Li, Ting

2018-02-01

Acupuncture has a long history of more than 2000 years in China. However, traditional acupuncture adopts metallic needles which may bring discomfort and pricking to patients. Laser acupuncture (LA) is a non-invasive and painless way to achieve some therapeutic effects. And compared to traditional acupuncture, LA is free from infection. Taking these advantages of LA into consideration, we innovatively developed a portable laser acupuncture device with therapy part and detection part together. Therapy part sends out laser at the wavelength of 650 nm onto special acupoints of patients. And detection part includes integrated light-emitting diode (LED, 735/805/850 nm) and photodiode (OPT101). The detection part is used for the data collection for calculation of hemodynamic parameters based on near-infrared spectroscopy (NIRS). In this work, we carried out current-power test for sensitivity of therapy part. And we also conducted liquid-model optical experiment and arm blocking test for the sensitivity and effectiveness of detection part. The final results demonstrated great potential and reliability of the novel laser acupuncture device. In the future, we will apply this device in clinical applications to verify the effectiveness of the device and improve the reliability for more treatment of diseases.

Enhanced device performances of a new inverted top-emitting OLEDs with relatively thick Ag electrode.

Science.gov (United States)

Park, So-Ra; Suh, Min Chul

2018-02-19

To improve the device performances of top-emitting organic light emitting diodes (TEOLEDs), we developed a new inverted TEOLEDs structure with silver (Ag) metal as a semi-transparent top electrode. Especially, we found that the use of relatively thick Ag electrode without using any carrier injection layer is beneficial to realize highly efficient device performances. Also, we could insert very thick overlying hole transport layer (HTL) on the emitting layer (EML) which could be very helpful to suppress the surface plasmon polariton (SPP) coupling if it is applied to the common bottom-emission OLEDs (BEOLEDs). As a result, we could realize noteworthy high current efficiency of approximately ~188.1 cd/A in our new inverted TEOLEDs with 25 nm thick Ag electrode.

Silicon based light-emitting materials and devices

International Nuclear Information System (INIS)

Chen Weide

1999-01-01

Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

Attractor hopping between polarization dynamical states in a vertical-cavity surface-emitting laser subject to parallel optical injection

Science.gov (United States)

Denis-le Coarer, Florian; Quirce, Ana; Valle, Angel; Pesquera, Luis; Rodríguez, Miguel A.; Panajotov, Krassimir; Sciamanna, Marc

2018-03-01

We present experimental and theoretical results of noise-induced attractor hopping between dynamical states found in a single transverse mode vertical-cavity surface-emitting laser (VCSEL) subject to parallel optical injection. These transitions involve dynamical states with different polarizations of the light emitted by the VCSEL. We report an experimental map identifying, in the injected power-frequency detuning plane, regions where attractor hopping between two, or even three, different states occur. The transition between these behaviors is characterized by using residence time distributions. We find multistability regions that are characterized by heavy-tailed residence time distributions. These distributions are characterized by a -1.83 ±0.17 power law. Between these regions we find coherence enhancement of noise-induced attractor hopping in which transitions between states occur regularly. Simulation results show that frequency detuning variations and spontaneous emission noise play a role in causing switching between attractors. We also find attractor hopping between chaotic states with different polarization properties. In this case, simulation results show that spontaneous emission noise inherent to the VCSEL is enough to induce this hopping.

Angular distribution of atoms emitted from a SrZrO3 target by laser ablation under different laser fluences and oxygen pressures

International Nuclear Information System (INIS)

Konomi, I.; Motohiro, T.; Azuma, H.; Asaoka, T.; Nakazato, T.; Sato, E.; Shimizu, T.; Fujioka, S.; Sarukura, N.; Nishimura, H.

2010-01-01

Angular distributions of atoms emitted by laser ablation of perovskite-type oxide SrZrO 3 have been investigated using electron probe microanalysis with wavelength-dispersive spectroscopy and charge-coupled device photography with an interference filter. Each constituent element has been analyzed as a two-modal distribution composed of a broad cos m θ distribution and a narrow cos n θ distribution. The exponent n characterizes the component of laser ablation while the exponent m characterizes that of thermal evaporation, where a larger n or m means a narrower angular distribution. In vacuum, O (n=6) showed a broader distribution than those of Sr (n=16) and Zr (n=17), and Sr + exhibited a spatial distribution similar to that of Sr. As the laser fluence was increased from 1.1 to 4.4 J/cm 2 , the angular distribution of Sr became narrower. In the laser fluence range of 1.1-4.4 J/cm 2 , broadening of the angular distribution of Sr was observed only at the fluence of 1.1 J/cm 2 under the oxygen pressure of 10 Pa. Monte Carlo simulations were performed to estimate approximately the energy of emitted atoms, focusing on the broadening of the angular distribution under the oxygen pressure of 10 Pa. The energies of emitted atoms were estimated to be 1-20 eV for the laser fluence of 1.1 J/cm 2 , and more than 100 eV for 2.2 and 4.4 J/cm 2 .

MOVPE growth and characterization of (In,Ga)N quantum structures for laser diodes emitting at 440 nm

Energy Technology Data Exchange (ETDEWEB)

Hoffmann, Veit

2011-04-18

The presented work describes the metal organic vapor phase epitaxy and characterization of nitride-based quantum structures which are used in laser heterostructures emitting in the wavelength range between 400 nm and 440 nm. Aiming at current injection and optically pumped laser structures with low threshold current or respectively threshold power densities, the device properties were correlated with the material properties of the indium gallium nitride (InGaN) active region. Furthermore, the influence of the active region and waveguide heterostructure layout on the material gain as well as the modal gain was investigated. In order to understand the InGaN growth process and the formation of structural imperfections, 15 nm-100 nm thick InGaN single layers were deposited on gallium nitride (GaN) on sapphire substrates and analyzed subsequently. It turned out that the spiral pattern of the growth edges around screw dislocations, threading from the substrate to the growth surface, and the formation of additional V-shaped surface defects are the main cause for the deterioration of the crystal perfection of the InGaN. As a result of the transition from a layer-by-layer to a 3D growth regime stable facets with preferred indium incorporation are formed that increase the lateral variation of the indium mole fraction in the layer. The higher indium incorporation at the facets is explained by dynamical elasticity theory and proven by the growth and characterization of InGaN layers on differently oriented GaN. The material properties of the InGaN quantum wells were correlated with laser device properties using 400 nm laser structures: In the case of thin quantum wells the 3D growth results in a lateral variation of the band gap due to variations of the indium mole fraction and the well width. Systematical investigations of laser structures with different band gap fluctuations show an increase of the threshold power density as the lateral variation of the band gap increases. It

InGaN multiple-quantum-well epifilms on GaN-sillicon substrates for microcavities and surface-emitting lasers

International Nuclear Information System (INIS)

Lee, June Key; Cho, Hoon; Kim, Bok Hee; Park, Si Hyun; Gu, Erdan; Watson, Ian; Dawson, Martin

2006-01-01

We report the processing of InGaN/GaN epifilms on GaN-silicon substrates. High-quality InGaN/GaN multi-quantum wells (MQWs) were grown on GaN-silicon substrates, and their membranes were successfully fabricated using a selective wet etching of silicon followed by a dry etching of the AlGaN buffer layer. With atomic force microscope (AFM) measurements and photoluminescence (PL) measurements, we investigated the physical and the optical properties of the InGaN/GaN MQWs membranes. On the InGaN/GaN MQW membranes, dielectric distributed Bragg reflector (DBRs) were successfully deposited, which give, new possibilities for use in GaN microcavity and surface-emitting laser fabrication.

Light collection optics for measuring flux and spectrum from light-emitting devices

Science.gov (United States)

McCord, Mark A.; DiRegolo, Joseph A.; Gluszczak, Michael R.

2016-05-24

Systems and methods for accurately measuring the luminous flux and color (spectra) from light-emitting devices are disclosed. An integrating sphere may be utilized to directly receive a first portion of light emitted by a light-emitting device through an opening defined on the integrating sphere. A light collector may be utilized to collect a second portion of light emitted by the light-emitting device and direct the second portion of light into the integrating sphere through the opening defined on the integrating sphere. A spectrometer may be utilized to measure at least one property of the first portion and the second portion of light received by the integrating sphere.

Single-exposure two-dimensional superresolution in digital holography using a vertical cavity surface-emitting laser source array.

Science.gov (United States)

Granero, Luis; Zalevsky, Zeev; Micó, Vicente

2011-04-01

We present a new implementation capable of producing two-dimensional (2D) superresolution (SR) imaging in a single exposure by aperture synthesis in digital lensless Fourier holography when using angular multiplexing provided by a vertical cavity surface-emitting laser source array. The system performs the recording in a single CCD snapshot of a multiplexed hologram coming from the incoherent addition of multiple subholograms, where each contains information about a different 2D spatial frequency band of the object's spectrum. Thus, a set of nonoverlapping bandpass images of the input object can be recovered by Fourier transformation (FT) of the multiplexed hologram. The SR is obtained by coherent addition of the information contained in each bandpass image while generating an enlarged synthetic aperture. Experimental results demonstrate improvement in resolution and image quality.

Impact of optical feedback on current-induced polarization behavior of 1550 nm vertical-cavity surface-emitting lasers.

Science.gov (United States)

Deng, Tao; Wu, Zheng-Mao; Xie, Yi-Yuan; Wu, Jia-Gui; Tang, Xi; Fan, Li; Panajotov, Krassimir; Xia, Guang-Qiong

2013-06-01

Polarization switching (PS) between two orthogonal linearly polarized fundamental modes is experimentally observed in commercial free-running 1550 nm vertical-cavity surface-emitting lasers (VCSELs) (Raycan). The characteristics of this PS are strongly modified after introducing a polarization-preserved (PP) or polarization-orthogonal (PO) optical feedback. Under the case that the external cavity is approximately 30 cm, the PP optical feedback results in the PS point shifting toward a lower injection current, and the region within which the two polarization modes coexist is enlarged with the increase of the PP feedback strength. Under too-strong PP feedback levels, the PS disappears. The impact of PO optical feedback on VCSEL polarization behavior is quite similar to that of PP optical feedback, but larger feedback strength is needed to obtain similar results.

Controlled light emission from white organic light-emitting devices with a single blue-emitting host and multiple fluorescent dopants

International Nuclear Information System (INIS)

Chin, Byung Doo; Kim, Jai Kyeong; Park, O Ok

2007-01-01

In this work, we fabricated white organic light-emitting devices (WOLEDs) containing a layered light-emitting region composed of a single blue-emitting host and different fluorescent dopant materials. The effects of varying the dye-doping ratio and emitting layer thickness on the efficiency, lifetime, spectral voltage-dependence and white balance were investigated for devices with a blue/orange stacked layer structure. Addition of a blue host layer doped with a green-emitting dopant, to give a blue/green/orange emitter, resulted in a broadband white spectrum without the need for a charge-blocking interlayer. The composition of blue, green and orange dopants in the host and the thickness of each emitting layer were optimized, resulting in a device efficiency of 9-11 cd A -1 even at a high brightness of 10 000 cd m -2 (achieved at a bias voltage of less than 9 V) with an emission spectrum suitable for lighting applications

Double surface plasmon enhanced organic light-emitting diodes by gold nanoparticles and silver nanoclusters

Energy Technology Data Exchange (ETDEWEB)

Gao, Chia-Yuan; Chen, Ying-Chung [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chen, Kan-Lin [Department of Electronic Engineering, Fortune Institute of Technology, Kaohsiung, Taiwan (China); Huang, Chien-Jung, E-mail: chien@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan (China)

2015-12-30

Graphical abstract: - Highlights: • The buffer layer is inserted between PEDOT: PSS and the emitting layer in order to avoid that the nonradiative decay process of exciton is generated. • The silver nanoclusters will generate surface plasmon resonance effect, resulting that the localized electric field around the silver nanoclusters is enhanced. • When the recombination region of the excitons is too close to the nanoparticles of the hole-transport layer, the nonradiative quenching of excitons is generated. - Abstract: The influence of gold nanoparticles (GNPs) and silver nanoclusters (SNCs) on the performance of organic light-emitting diodes is investigated in this study. The GNPs are doped into (poly (3, 4-ethylenedioxythiophene) poly (styrenesulfonate)) (PEDOT: PSS) and the SNCs are introduced between the electron-injection layer and cathode alumina. The power efficiency of the device, at the maximum luminance, with double surface plasmon resonance and buffer layer is about 2.15 times higher than that of the device without GNPs and SNCs because the absorption peaks of GNPs and SNCs are as good as the photoluminescence peak of the emission layer, resulting in strong surface plasmon resonance effect in the device. In addition, the buffer layer is inserted between PEDOT: PSS and the emitting layer in order to avoid that the nonradiative decay process of exciton is generated.

Pb{sub 1–x}Eu{sub x}Te alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm

Energy Technology Data Exchange (ETDEWEB)

Pashkeev, D. A., E-mail: d.pashkeev@gmail.com; Selivanov, Yu. G.; Chizhevskii, E. G.; Zasavitskiy, I. I. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

2016-02-15

The optical properties of epitaxial layers and heterostructures based on Pb{sub 1–x}Eu{sub x}Te alloys (0 ⩽ x ⩽ 1) are analyzed in the context of designing Bragg mirrors and vertical-cavity surface-emitting lasers for the midinfrared spectral range. It is shown that the optimal heteropair for laser microcavities is Pb{sub 1–x}Eu{sub x}Te(x ≈ 0.06)/EuTe. On the basis of this heteropair, highly reflective Bragg mirrors consisting of just three periods and featuring a reflectance of R ⩾ 99.8% at the center of the stop band are grown by molecular-beam epitaxy on BaF{sub 2} (111) substrates. Single-mode optically pumped vertical-cavity surface-emitting lasers for the 4–5 μm spectral range operating at liquid-nitrogen temperatures are demonstrated.

Surface morphology and interdiffusion of LiF in Alq3-based organic light-emitting devices.

Science.gov (United States)

Lee, Young Joo; Li, Xiaolong; Kang, Da-Yeon; Park, Seong-Sik; Kim, Jinwoo; Choi, Jeong-Woo; Kim, Hyunjung

2008-09-01

Highly efficient organic light-emitting devices (OLEDs) have been realized by insertion of a thin insulating lithium fluoride (LiF) layer between aluminum (Al) cathode and an electron transport layer, tris-(8-hydroxyquinoline) aluminum (Alq(3)). In this paper, we study the surface morphology of LiF on Alq(3) by synchrotron X-ray scattering and atomic force microscopy (AFM) as a function of thickness of LiF. We also study the interdiffusion of LiF into Al cathode as well as into Alq(3) layer as a function of temperature. Initially, LiF molecules are distributed randomly as clusters on the Alq(3) layer and then gradually form a layer as increasing LiF thickness. The interdiffusion of LiF into Al occurs more actively than into Alq(3) in annealing process. LiF on Alq(3) induces the ordering of Al to (111) direction strongly with increasing LiF thickness.

The influence of surface contamination on the ion emission from nanosecond-pulsed laser ablation of Al and Cu

Science.gov (United States)

Ullah, S.; Dogar, A. H.; Qayyum, H.; Rehman, Z. U.; Qayyum, A.

2018-04-01

Ions emitted from planar Al and Cu targets irradiated with a 1064 nm pulsed laser were investigated with the help of a time-resolving Langmuir probe. It was found that the intensity of the ions emitted from a target area rapidly decreases with the increasing number of laser shots, and seems to reach saturation after about 10 laser shots. The saturated intensity of Al and Cu ions was approximately 0.1 and 0.3 times the intensity of the respective ions measured at the first laser shot, respectively. The higher target ion intensity for the first few shots is thought to be due to the enhanced ionization of target atoms by vacuum-ultraviolet radiations emitted from the thermally excited/ionized surface contaminants. The reduction of target ion intensity with an increasing number of laser shots thus indicates the removal of contaminants from the irradiated surface area. Laser-cleaned Al and Cu surfaces were then allowed to be recontaminated with residual vacuum gases and the ion intensity was measured at various time delays. The prolonged exposure of the cleaned target to vacuum residual gases completely restores the ion intensity. Regarding surface contaminants removal, laser shots of higher intensities were found to be more effective than a higher number of laser shots having lower intensities.

High power cascade diode lasers emitting near 2 μm

Energy Technology Data Exchange (ETDEWEB)

Hosoda, Takashi; Feng, Tao; Shterengas, Leon, E-mail: leon.shterengas@stonybrook.edu; Kipshidze, Gela; Belenky, Gregory [State University of New York at Stony Brook, Stony Brook, New York 11794 (United States)

2016-03-28

High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumping scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.

Simplified nonplanar wafer bonding for heterogeneous device integration

Science.gov (United States)

Geske, Jon; Bowers, John E.; Riley, Anton

2004-07-01

We demonstrate a simplified nonplanar wafer bonding technique for heterogeneous device integration. The improved technique can be used to laterally integrate dissimilar semiconductor device structures on a lattice-mismatched substrate. Using the technique, two different InP-based vertical-cavity surface-emitting laser active regions have been integrated onto GaAs without compromising the quality of the photoluminescence. Experimental and numerical simulation results are presented.

1.3 μm wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: A prospect for polarization control

Science.gov (United States)

Okuno, Yae L.; Geske, Jon; Gan, Kian-Giap; Chiu, Yi-Jen; DenBaars, Steven P.; Bowers, John E.

2003-04-01

We propose and demonstrate a long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of a (311)B InP-based active region and (100) GaAs-based distributed Bragg reflectors (DBRs), with an aim to control the in-plane polarization of output power. Crystal growth on (311)B InP substrates was performed under low-migration conditions to achieve good crystalline quality. The VCSEL was fabricated by wafer bonding, which enables us to combine different materials regardless of their lattice and orientation mismatch without degrading their quality. The VCSEL was polarized with a power extinction ratio of 31 dB.

Picosecond laser micro/nano surface texturing of nickel for superhydrophobicity

Science.gov (United States)

Wang, X. C.; Wang, B.; Xie, H.; Zheng, H. Y.; Lam, Y. C.

2018-03-01

A single step direct picosecond laser texturing process was demonstrated to be able to obtain a superhydrophobic surface on a nickel substrate, a key material for mold fabrication in the manufacture of various devices, including polymeric microfluidic devices. A two-scale hierarchical surface structure of regular 2D array micro-bumps with nano-ripples was produced on a nickel surface. The laser textured surface initially showed superhydrophilicity with almost complete wetting of the structured surface just after laser treatment, then quickly changed to nearly superhydrophobic with a water contact angle (WCA) of 140° in less than 1 d, and finally became superhydrophobic with a WCA of more than 150° and a contact angle hysteresis (CAH) of less than 5°. The mechanism involved in the process is discussed in terms of surface morphology and surface chemistry. The ultra-fast laser induced NiO catalytic effect was thought to play a key role in modifying the surface chemistry so as to lower the surface energy. The developed process has the potential to improve the performance of nickel mold in the fabrication of microfluidic devices.

High performance flexible top-emitting warm-white organic light-emitting devices and chromaticity shift mechanism

Energy Technology Data Exchange (ETDEWEB)

Shi, Hongying; Deng, Lingling; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn, E-mail: wei-huang@njupt.edu.cn; Xu, Ying; Zhao, Xiaofei; Cheng, Fan [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China); Huang, Wei, E-mail: iamsfchen@njupt.edu.cn, E-mail: wei-huang@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China); Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Technology, Nanjing 211816 (China)

2014-04-15

Flexible warm-white top-emitting organic light-emitting devices (TEOLEDs) are fabricated onto PET substrates with a simple semi-transparent cathode Sm/Ag and two-color phosphors respectively doped into a single host material TCTA. By adjusting the relative position of the orange-red EML sandwiched between the blue emitting layers, the optimized device exhibits the highest power/current efficiency of 8.07 lm/W and near 13 cd/A, with a correlated color temperature (CCT) of 4105 K and a color rendering index (CRI) of 70. In addition, a moderate chromaticity variation of (-0.025, +0.008) around warm white illumination coordinates (0.45, 0.44) is obtained over a large luminance range of 1000 to 10000 cd/m{sup 2}. The emission mechanism is discussed via delta-doping method and single-carrier device, which is summarized that the carrier trapping, the exciton quenching, the mobility change and the recombination zone alteration are negative to color stability while the energy transfer process and the blue/red/blue sandwiched structure are contributed to the color stability in our flexible white TEOLEDs.

Diode-laser pumping into the emitting level for efficient lasing of depressed cladding waveguides realized in Nd:YVO4 by the direct femtosecond-laser writing technique.

Science.gov (United States)

Pavel, Nicolaie; Salamu, Gabriela; Jipa, Florin; Zamfirescu, Marian

2014-09-22

Depressed cladding waveguides have been realized in Nd:YVO(4) employing direct writing technique with a femtosecond-laser beam. It was shown that the output performances of such laser devices are improved by the reduction of the quantum defect between the pump wavelength and the laser wavelength. Thus, under the classical pump at 808 nm (i.e. into the (4)F(5/2) level), a 100-μm diameter circular waveguide inscribed in a 0.7-at.% Nd:YVO(4) outputted 1.06-μm laser pulses with 3.0-mJ energy, at 0.30 optical efficiency and slope efficiency of 0.32. The pump at 880 nm (i.e.directly into the (4)F(3/2) emitting level) increased the pulse energy at 3.8 mJ and improved both optical efficiency and slope efficiency at 0.36 and 0.39, respectively. The same waveguide yielded continuous-wave 1.5-W output power at 1.06 μm under the pump at 880 nm. Laser emission at 1.34 μm was also improved using the pump into the (4)F(3/2) emitting level of Nd:YVO(4).

Fluorescent deep-blue and hybrid white emitting devices based on a naphthalene-benzofuran compound

KAUST Repository

Yang, Xiaohui; Zheng, Shijun; Chae, HyunSik; Li, Sheng; Mochizuki, Amane; Jabbour, Ghassan E.

2013-01-01

We report the synthesis, photophysics and electrochemical properties of naphthalene-benzofuran compound 1 and its application in organic light emitting devices. Fluorescent deep-blue emitting devices employing 1 as the emitting dopant embedded in 4

Bill C-5, an act to amend the radiation emitting devices act

International Nuclear Information System (INIS)

1984-01-01

This Act, entitled Bill C-5, allows for a series of amendments to the Radiation Emitting Devices Act. The amendments relate to regulations concerned with the sale, lease or import, labelling, advertising, packaging, safety standards and inspection of radiation emitting devices

Chaos synchronization in vertical-cavity surface-emitting laser based on rotated polarization-preserved optical feedback.

Science.gov (United States)

Nazhan, Salam; Ghassemlooy, Zabih; Busawon, Krishna

2016-01-01

In this paper, the influence of the rotating polarization-preserved optical feedback on the chaos synchronization of a vertical-cavity surface-emitting laser (VCSEL) is investigated experimentally. Two VCSELs' polarization modes (XP) and (YP) are gradually rotated and re-injected back into the VCSEL. The anti-phase dynamics synchronization of the two polarization modes is evaluated using the cross-correlation function. For a fixed optical feedback, a clear relationship is found between the cross-correlation coefficient and the polarization angle θp. It is shown that high-quality anti-phase polarization-resolved chaos synchronization is achieved at higher values of θp. The maximum value of the cross-correlation coefficient achieved is -0.99 with a zero time delay over a wide range of θp beyond 65° with a poor synchronization dynamic at θp less than 65°. Furthermore, it is observed that the antiphase irregular oscillation of the XP and YP modes changes with θp. VCSEL under the rotating polarization optical feedback can be a good candidate as a chaotic synchronization source for a secure communication system.

Semiconductor laser engineering, reliability and diagnostics a practical approach to high power and single mode devices

CERN Document Server

Epperlein, Peter W

2013-01-01

This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performa...

Photoelectron emission from metal surfaces by ultrashort laser pulses

International Nuclear Information System (INIS)

Faraggi, M. N.; Gravielle, M. S.; Silkin, V. M.

2006-01-01

Electron emission from metal surfaces produced by short laser pulses is studied within the framework of the distorted-wave formulation. The proposed approach, named surface-Volkov (SV) approximation, makes use of the band-structure based (BSB) model and the Volkov phase to describe the interaction of the emitted electron with the surface and the external electric field, respectively. The BSB model provides a realistic representation of the surface, based on a model potential that includes the main features of the surface band structure. The SV method is applied to evaluate the photoelectron emission from the valence band of Al(111). Angular and energy distributions are investigated for different parameters of the laser pulse, keeping in all cases the carrier frequency larger than the plasmon one

Printing method for organic light emitting device lighting

Science.gov (United States)

Ki, Hyun Chul; Kim, Seon Hoon; Kim, Doo-Gun; Kim, Tae-Un; Kim, Snag-Gi; Hong, Kyung-Jin; So, Soon-Yeol

2013-03-01

Organic Light Emitting Device (OLED) has a characteristic to change the electric energy into the light when the electric field is applied to the organic material. OLED is currently employed as a light source for the lighting tools because research has extensively progressed in the improvement of luminance, efficiency, and life time. OLED is widely used in the plate display device because of a simple manufacture process and high emitting efficiency. But most of OLED lighting projects were used the vacuum evaporator (thermal evaporator) with low molecular. Although printing method has lower efficiency and life time of OLED than vacuum evaporator method, projects of printing OLED actively are progressed because was possible to combine with flexible substrate and printing technology. Printing technology is ink-jet, screen printing and slot coating. This printing method allows for low cost and mass production techniques and large substrates. In this research, we have proposed inkjet printing for organic light-emitting devices has the dominant method of thick film deposition because of its low cost and simple processing. In this research, the fabrication of the passive matrix OLED is achieved by inkjet printing, using a polymer phosphorescent ink. We are measured optical and electrical characteristics of OLED.

Red light emitting solid state hybrid quantum dot-near-UV GaN LED devices

International Nuclear Information System (INIS)

Song, Hongjoo; Lee, Seonghoon

2007-01-01

We produced core-shell (CdSe)ZnSe quantum dots by direct colloidal chemical synthesis and the surface-passivation method-an overcoating of the core CdSe with a larger-bandgap material ZnSe. The (CdSe)ZnSe quantum dots(QDs) play the role of a colour conversion centre. We call these quantum dots nanophosphors. We fabricated red light emitting hybrid devices of (CdSe)ZnSe QDs and a near-UV GaN LED by combining red light emitting (CdSe)ZnSe quantum dots (as a colour conversion centre) with a near-UV(NUV) GaN LED chip (as an excitation source). A few good red phosphors have been known for UV excitation wavelengths, and red phosphors for UV excitation have been sought for a long time. Here we tested the possibility of using (CdSe)ZnSe QDs as red nanophosphors for UV excitation. The fabricated red light emitting hybrid device of (CdSe)ZnSe and a NUV GaN LED chip showed a good luminance. We demonstrated that the (CdSe)ZnSe quantum dots were promising red nanophosphors for NUV excitation and that a red LED made of QDs and a NUV excitation source was a highly efficient hybrid device

Tunable magneto-conductance and magneto-electroluminescence in polymer light-emitting electrochemical planar devices

Energy Technology Data Exchange (ETDEWEB)

Geng, R.; Mayhew, N. T.; Nguyen, T. D., E-mail: ngtho@uga.edu [Department of Physics and Astronomy, University of Georgia, Athens, Georgia 30602 (United States)

2013-12-09

We report studies of magneto-conductance (MC) and magneto-electroluminescence (MEL) in polymer light-emitting electrochemical planar devices using “super-yellow” poly-(phenylene vinylene). We observed consistent negative MC while MEL becomes positive when electroluminescence quantum efficiency (ELQE) increases. At an optimal ELQE, the MC has a much narrower width than the MEL, indicating that the MC and MEL do not share a common origin. However, MC reverses and has the same width as MEL when exposed to a threshold laser power. We show that the e-h pair model can explain the positive MEL and MC while the negative MC can be explained by the bipolaron model.

Tunable magneto-conductance and magneto-electroluminescence in polymer light-emitting electrochemical planar devices

International Nuclear Information System (INIS)

Geng, R.; Mayhew, N. T.; Nguyen, T. D.

2013-01-01

We report studies of magneto-conductance (MC) and magneto-electroluminescence (MEL) in polymer light-emitting electrochemical planar devices using “super-yellow” poly-(phenylene vinylene). We observed consistent negative MC while MEL becomes positive when electroluminescence quantum efficiency (ELQE) increases. At an optimal ELQE, the MC has a much narrower width than the MEL, indicating that the MC and MEL do not share a common origin. However, MC reverses and has the same width as MEL when exposed to a threshold laser power. We show that the e-h pair model can explain the positive MEL and MC while the negative MC can be explained by the bipolaron model

Solution processed, white emitting tandem organic light-emitting diodes with inverted device architecture.

Science.gov (United States)

Höfle, Stefan; Schienle, Alexander; Bernhard, Christoph; Bruns, Michael; Lemmer, Uli; Colsmann, Alexander

2014-08-13

Fully solution processed monochromatic and white-light emitting tandem or multi-photon polymer OLEDs with an inverted device architecture have been realized by employing WO3 /PEDOT:PSS/ZnO/PEI charge carrier generation layers. The luminance of the sub-OLEDs adds up in the stacked device indicating multi-photon emission. The white OLEDs exhibit a CRI of 75. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surface processing by high power excimer laser

Energy Technology Data Exchange (ETDEWEB)

Stehle, M [SOPRA, 92 - Bois-Colombes (France)

1995-03-01

Surface processing with lasers is a promising field of research and applications because lasers bring substantial advantages : laser beams work at distance, laser treatments are clean in respect of environment consideration and they offer innovative capabilities for surface treatment which cannot be reached by other way. Excimer lasers are pulsed, gaseous lasers which emit in UV spectral range - the most common are XeCl (308 nm), KrF (248 nm), ArF (193 nm). From 1980 up to 1994, many of them have been used for research, medical and industrial applications such as spectroscopy, PRK (photo-refractive keratotomy) and micro-machining. In the last six years, from 1987 up to 1993, efforts have been done in order to jump from 100 W average power up to 1 kW for XeCl laser at {lambda} = 308 nm. It was the aim of AMMTRA project in Japan as EU205 and EU213 Eureka projects in Europe. In this framework, SOPRA developed VEL (Very large Excimer Laser). In 1992, 1 kW (10 J x 100 Hz) millstone has been reached for the first time, this technology is based on X-Ray preionization and large laser medium (5 liters). Surface treatments based on this laser source are the main purpose of VEL Lasers. Some of them are given for instance : (a) Turbine blades made with metallic substrate and ceramic coatings on the top, are glazed in order to increase corrosion resistance of ceramic and metal sandwich. (b) Selective ablation of organic coatings deposited on fragile composite material is investigated in Aerospace industry. (c) Chock hardening of bulk metallic materials or alloys are investigated for automotive industry in order to increase wear resistance. (d) Ablation of thin surface oxides of polluted steels are under investigation in nuclear industry for decontamination. (J.P.N.).

Surface processing by high power excimer laser

International Nuclear Information System (INIS)

Stehle, M.

1995-01-01

Surface processing with lasers is a promising field of research and applications because lasers bring substantial advantages : laser beams work at distance, laser treatments are clean in respect of environment consideration and they offer innovative capabilities for surface treatment which cannot be reached by other way. Excimer lasers are pulsed, gaseous lasers which emit in UV spectral range - the most common are XeCl (308 nm), KrF (248 nm), ArF (193 nm). From 1980 up to 1994, many of them have been used for research, medical and industrial applications such as spectroscopy, PRK (photo-refractive keratotomy) and micro-machining. In the last six years, from 1987 up to 1993, efforts have been done in order to jump from 100 W average power up to 1 kW for XeCl laser at λ = 308 nm. It was the aim of AMMTRA project in Japan as EU205 and EU213 Eureka projects in Europe. In this framework, SOPRA developed VEL (Very large Excimer Laser). In 1992, 1 kW (10 J x 100 Hz) millstone has been reached for the first time, this technology is based on X-Ray preionization and large laser medium (5 liters). Surface treatments based on this laser source are the main purpose of VEL Lasers. Some of them are given for instance : a) Turbine blades made with metallic substrate and ceramic coatings on the top, are glazed in order to increase corrosion resistance of ceramic and metal sandwich. b) Selective ablation of organic coatings deposited on fragile composite material is investigated in Aerospace industry. c) Chock hardening of bulk metallic materials or alloys are investigated for automotive industry in order to increase wear resistance. d) Ablation of thin surface oxides of polluted steels are under investigation in nuclear industry for decontamination. (J.P.N.)

Semiconductor Lasers Stability, Instability and Chaos

CERN Document Server

Ohtsubo, Junji

2013-01-01

This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

A simulation of laser energy absorption by nanowired surface

Energy Technology Data Exchange (ETDEWEB)

Vasconcelos, Miguel F.S.; Ramos, Alexandre F., E-mail: miguel.vasconcelos@usp.br, E-mail: alex.ramos@usp.br [Universidade de São Paulo (USP), SP (Brazil). Escola de Artes, Ciências e Humanidades

2017-07-01

Despite recent advances on research about laser inertial fusion energy, to increase the portion of energy absorbed by the target's surface from lasers remains as an important challenge. The plasma formed during the initial instants of laser arrival shields the target and prevents the absorption of laser energy by the deeper layers of the material. One strategy to circumvent that effect is the construction of targets whose surfaces are populated with nanowires. The nanowired surfaces have increased absorption of laser energy and constitutes a promising pathway for enhancing laser-matter coupling. In our work we present the results of simulations aiming to investigate how target's geometrical properties might contribute for maximizing laser energy absorption by material. Simulations have been carried out using the software FLASH, a multi-physics platform developed by researchers from the University of Chicago, written in FORTRAN 90 and Python. Different tools for generating target's geometry and analysis of results were developed using Python. Our results show that a nanowired surfaces has an increased energy absorption when compared with non wired surface. The software for visualization developed in this work also allowed an analysis of the spatial dynamics of the target's temperature, electron density, ionization levels and temperature of the radiation emitted by it. (author)

A simulation of laser energy absorption by nanowired surface

International Nuclear Information System (INIS)

Vasconcelos, Miguel F.S.; Ramos, Alexandre F.

2017-01-01

Despite recent advances on research about laser inertial fusion energy, to increase the portion of energy absorbed by the target's surface from lasers remains as an important challenge. The plasma formed during the initial instants of laser arrival shields the target and prevents the absorption of laser energy by the deeper layers of the material. One strategy to circumvent that effect is the construction of targets whose surfaces are populated with nanowires. The nanowired surfaces have increased absorption of laser energy and constitutes a promising pathway for enhancing laser-matter coupling. In our work we present the results of simulations aiming to investigate how target's geometrical properties might contribute for maximizing laser energy absorption by material. Simulations have been carried out using the software FLASH, a multi-physics platform developed by researchers from the University of Chicago, written in FORTRAN 90 and Python. Different tools for generating target's geometry and analysis of results were developed using Python. Our results show that a nanowired surfaces has an increased energy absorption when compared with non wired surface. The software for visualization developed in this work also allowed an analysis of the spatial dynamics of the target's temperature, electron density, ionization levels and temperature of the radiation emitted by it. (author)

Improvement of a device for monitoring the contamination of surfaces

International Nuclear Information System (INIS)

Barbier, Albert.

1981-01-01

The purpose of this invention is to make it possible to monitor the contamination of surfaces by a light weight portable device and enabling the alpha, beta and gamma radiation contamination to be detected. The detection probe which is connected by a single lead to the box is adapted, in each particular case, to the radiation mode emitted by the contaminated surfaces and the box is provided with a special leak-proof socket for connecting the probe and includes means for assessing the counting rate of the radiation given off, depending on the mode of the radiations emitted by the contaminated surfaces and the intensity of the count rate [fr

Fluorescent deep-blue and hybrid white emitting devices based on a naphthalene-benzofuran compound

KAUST Repository

Yang, Xiaohui

2013-08-01

We report the synthesis, photophysics and electrochemical properties of naphthalene-benzofuran compound 1 and its application in organic light emitting devices. Fluorescent deep-blue emitting devices employing 1 as the emitting dopant embedded in 4-4′-bis(9-carbazolyl)-2,2′-biphenyl (CBP) host show the peak external quantum efficiency of 4.5% and Commission Internationale d\\'Énclairage (CIE) coordinates of (0.15, 0.07). Hybrid white devices using fluorescent blue emitting layer with 1 and a phosphorescent orange emitting layer based on an iridium-complex show the peak external quantum efficiency above 10% and CIE coordinates of (0.31, 0.37). © 2013 Published by Elsevier B.V.

Semiconductor laser joint study program with Rome Laboratory

Science.gov (United States)

Schaff, William J.; Okeefe, Sean S.; Eastman, Lester F.

1994-09-01

A program to jointly study vertical-cavity surface emitting lasers (VCSEL) for high speed vertical optical interconnects (VOI) has been conducted under an ES&E between Rome Laboratory and Cornell University. Lasers were designed, grown, and fabricated at Cornell University. A VCSEL measurement laboratory has been designed, built, and utilized at Rome Laboratory. High quality VCSEL material was grown and characterized by fabricating conventional lateral cavity lasers that emitted at the design wavelength of 1.04 microns. The VCSEL's emit at 1.06 microns. Threshold currents of 16 mA at 4.8 volts were obtained for 30 microns diameter devices. Output powers of 5 mW were measured. This is 500 times higher power than from the light emitting diodes employed previously for vertical optical interconnects. A new form of compositional grading using a cosinusoidal function has been developed and is very successful for reducing diode series resistance for high speed interconnection applications. A flip-chip diamond package compatible with high speed operation of 16 VCSEL elements has been designed and characterized. A flip-chip device binding effort at Rome Laboratory was also designed and initiated. This report presents details of the one-year effort, including process recipes and results.

Organic light emitting device architecture for reducing the number of organic materials

Science.gov (United States)

D'Andrade, Brian [Westampton, NJ; Esler, James [Levittown, PA

2011-10-18

An organic light emitting device is provided. The device includes an anode and a cathode. A first emissive layer is disposed between the anode and the cathode. The first emissive layer includes a first non-emitting organic material, which is an organometallic material present in the first emissive layer in a concentration of at least 50 wt %. The first emissive layer also includes a first emitting organic material. A second emissive layer is disposed between the first emissive layer and the cathode, preferably, in direct contact with the first emissive layer. The second emissive material includes a second non-emitting organic material and a second emitting organic material. The first and second non-emitting materials, and the first and second emitting materials, are all different materials. A first non-emissive layer is disposed between the first emissive layer and the anode, and in direct contact with the first emissive layer. The first non- emissive layer comprises the first non-emissive organic material.

White organic light-emitting devices with high color purity and stability

Science.gov (United States)

Bai, Yajie; Liu, Su; Li, Hairong; Liu, Chunjuan; Wang, Jinshun; Chang, Jinxian

2014-04-01

A white organic light-emitting device (WOLED) with dual-emitting layers was presented, in which the blue fluorescent dye 2,5,8,11-terta-tertbutylperylene (TBPe) was doped in 2-methyl-9, 10-di(2-naphthyl)-anthracene (MADN) as a blue-emitting layer, while 5,6,11,12-tetraphenylnaphthacene (rubrene, Rb) was doped in the above-mentioned materials as a yellow-emitting layer. The fabricated monochromatic devices using the blue- and yellow-emitting layer have demonstrated that the direct charge trapping mechanism is the dominant emission mechanism in the yellow OLED. Studies on the WOLEDs with dual-emitting layers have shown that the performances of these devices are strongly susceptible to the thickness of the emitting layer and the stack order of two emitting layers. Structure of ITO(160 nm)/NPB(30 nm)/MADN: 5 wt%TBPe: 3 wt%Rb(10 nm)/MADN: 5 wt%TBPe(20 nm)/BCP (10 nm)/Alq3(20 nm)/Al(100 nm) was determined to be the most favorable WOLED. The maximum luminance of 16 000 cd cm-2 at the applied voltage of 13.4 V and Commission International de 1‧Eclairage (CIE) coordinates of (0.3263, 0.3437) which is closer to the standard white light (CIE (0.33, 0.33)) than the most recent reported WOLEDs were obtained. Moreover, there is just slight variation of CIE coordinates (ΔCIEx, y = 0.0171, 0.0167; corresponding Δu‧v‧ = 0.0119) when the current density increases from 10 to 100 mA cm-2. It reveals that the emissive dopant Rb acts as charge traps to improve electron-hole balance, provides sites for electron-hole recombination and thus makes carriers distribute more evenly in the dual-emitting layers which broaden the recombination zone and improve the stability of the CIE coordinates.

Degradation in organic light emitting devices

Science.gov (United States)

Dinh, Vincent Vinh

This thesis is about the fundamental causes of degradation in tris(8-Hydroxyquinoline) Aluminum (Alq3)-based organic light emitting diodes (OLEDs). Degradation typically occurs when a current is forced through an insulating material. Since the insulator does not support conduction waves (in its ground state), chemical restructuring must occur to accommodate the current. OLEDs have many technical advantages over the well known semiconductor-based light emitting diodes (LEDs). OLEDs have quantum efficiencies ˜1% (˜10 times higher than the LEDs), and operational power thresholds ˜.05mW (˜100 lower than the LEDs). OLEDs are preferred in power limited and portable devices; devices such as laptops and displays consume ˜1/4 of the supplied power---any power saving is significant. Other advantages, like better compliance to curved surfaces and ease of fabrication, give the OLEDs an even greater edge over the LEDs. OLEDs must have at least comparable or better lifetimes to remain attractive. Typical OLEDs last several 100hrs compared to the several 1000hrs for the LEDs. For reliable OLED application, it is necessary to understand the above breakdown mechanism. In this thesis, we attempt to understand the breakdown by looking at how OLEDs are made, how they work, and when they don't. In the opening sections, we give an overview of OLEDs and LEDs, especially how sustained luminescence is achieved through current circulation. Then in Chapter 2, we look at the basic components in the OLEDs. In Chapter 3 we look at how a hole material (like poly-vinyl carbazole or PVK) establishes an excitonic environment for the sustained luminescence in Alq3. We then approximate how potential is distributed when a simple luminescence system is in operation. In Chapter 4, we look at ways of measuring this distribution via the OLED impedance. Finally in Chapter 5, we look at the OLED stability under light emission conditions via PVK and Alq3 photoemission and photoabsorption spectra

Effect of KrF excimer laser irradiation on the surface changes and photoelectric properties of ZnO single crystal

Energy Technology Data Exchange (ETDEWEB)

Zeng, Yong [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Beijing Engineering Research Center of 3D Printing for Digital Medical Health, Beijing International Cooperation Base of 3D Printing for Digital MedicalHealth, Beijing University of Technology, Beijing 100124 (China); Zhao, Yan [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Jiang, Yijian, E-mail: yjjiang@bjut.edu.cn [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Beijing Engineering Research Center of 3D Printing for Digital Medical Health, Beijing International Cooperation Base of 3D Printing for Digital MedicalHealth, Beijing University of Technology, Beijing 100124 (China)

2016-06-25

In this paper, the effect of KrF pulsed excimer laser irradiation on the structural, surface morphology, photoluminescence and electrical properties of ZnO single crystal was investigated. Compared to the as-grown sample, at an irradiation energy density of 257 mJ/cm{sup 2}, the ZnO single crystal exhibits a series of phenomenon: XRD and Raman results show that the crystallization of ZnO quality change slightly, resistivity is decreased by two orders of magnitude, carrier concentration is increased by one order of magnitude. After laser irradiation, the surface shows some strip lines and no cracks. Formula calculation and simulation results show that the stripes are not caused by surface melting. We speculate that these stripes are caused by the precipitation of ZnO material inside to the surface. Due to the reduction of oxygen vacancies, UV emission has been enhanced and visible emission has been declined after irradiation. After the laser irradiation, the visible light of ZnO surface can be regulated. The experimental results show that KrF laser irradiation could effectively improve the optical and electrical properties of ZnO single crystal, which is important for the application of high performance of emitting optoelectronic devices. - Highlights: • After laser irradiation, the surface shows some strip lines and no cracks. • The visible light of as-irradiated ZnO surface can be regulated to four colors. • The electrical properties of as-irradiated ZnO has been improved greatly.

Surface plasmon quantum cascade lasers as terahertz local oscillators

NARCIS (Netherlands)

Hajenius, M.; Khosropanah, P.; Hovenier, J. N.; Gao, J. R.; Klapwijk, T. M.; Barbieri, S.; Dhillon, S.; Filloux, P.; Sirtori, C.; Ritchie, D. A.; Beere, H. E.

2008-01-01

We characterize a heterodyne receiver based on a surface-plasmon waveguide quantum cascade laser (QCL) emitting at 2.84 THz as a local oscillator, and an NbN hot electron bolometer as a mixer. We find that the envelope of the far-field pattern of the QCL is diffraction-limited and superimposed onto

Lambertian white top-emitting organic light emitting device with carbon nanotube cathode

Science.gov (United States)

Freitag, P.; Zakhidov, Al. A.; Luessem, B.; Zakhidov, A. A.; Leo, K.

2012-12-01

We demonstrate that white organic light emitting devices (OLEDs) with top carbon nanotube (CNT) electrodes show almost no microcavity effect and exhibit essentially Lambertian emission. CNT top electrodes were applied by direct lamination of multiwall CNT sheets onto white small molecule OLED stack. The devices show an external quantum efficiency of 1.5% and high color rendering index of 70. Due to elimination of the cavity effect, the devices show good color stability for different viewing angles. Thus, CNT electrodes are a viable alternative to thin semitransparent metallic films, where the strong cavity effect causes spectral shift and non-Lambertian angular dependence. Our method of the device fabrication is simple yet effective and compatible with virtually any small molecule organic semiconductor stack. It is also compatible with flexible substrates and roll-to-roll fabrication.

Organic light emitting diode with surface modification layer

Science.gov (United States)

Basil, John D.; Bhandari, Abhinav; Buhay, Harry; Arbab, Mehran; Marietti, Gary J.

2017-09-12

An organic light emitting diode (10) includes a substrate (12) having a first surface (14) and a second surface (16), a first electrode (32), and a second electrode (38). An emissive layer (36) is located between the first electrode (32) and the second electrode (38). The organic light emitting diode (10) further includes a surface modification layer (18). The surface modification layer (18) includes a non-planar surface (30, 52).

Dual-wavelength external cavity laser device for fluorescence suppression in Raman spectroscopy

Science.gov (United States)

Zhang, Xuting; Cai, Zhijian; Wu, Jianhong

2017-10-01

Raman spectroscopy has been widely used in the detection of drugs, pesticides, explosives, food additives and environmental pollutants, for its characteristics of fast measurement, easy sample preparation, and molecular structure analyzing capability. However, fluorescence disturbance brings a big trouble to these applications, with strong fluorescence background covering up the weak Raman signals. Recently shifted excitation Raman difference spectroscopy (SERDS) not only can completely remove the fluorescence background, but also can be easily integrated into portable Raman spectrometers. Usually, SERDS uses two lasers with small wavelength gap to excite the sample, then acquires two spectra, and subtracts one to the other to get the difference spectrum, where the fluorescence background will be rejected. So, one key aspects of successfully applying SERDS method is to obtain a dual-wavelength laser source. In this paper, a dual-wavelength laser device design based on the principles of external cavity diode laser (ECDL) is proposed, which is low-cost and compact. In addition, it has good mechanical stability because of no moving parts. These features make it an ideal laser source for SERDS technique. The experiment results showed that the device can emit narrow-spectral-width lasers of two wavelengths, with the gap smaller than 2 nanometers. The laser power corresponding to each wavelength can be up to 100mW.

Ultraviolet laser transverse profile shaping for improving x-ray free electron laser performance

International Nuclear Information System (INIS)

Li, S.; Alverson, S.; Bohler, D.; Egger, A.; Fry, A.

2017-01-01

The photocathode rf gun is one of the most critical components in x-ray free electron lasers. The drive laser strikes the photocathode surface, which emits electrons with properties that depend on the shape of the drive laser. Most free electron lasers use photocathodes with work function in the ultraviolet, a wavelength where direct laser manipulation becomes challenging. In this paper, we present a novel application of a digital micromirror device (DMD) for the 253 nm drive laser at the Linear Coherent Light Source. Laser profile shaping is accomplished through an iterative algorithm that takes into account shaping error and efficiency. Next, we use laser shaping to control the X-ray laser output via an online optimizer, which shows improvement in FEL pulse energy. Lastly, as a preparation for electron beam shaping, we use the DMD to measure the photocathode quantum efficiency across cathode surface with an averaged laser rms spot size of 59 μm. In conclusion, our experiments demonstrate promising outlook of using DMD to shape ultraviolet lasers for photocathode rf guns with various applications.

Ultraviolet laser transverse profile shaping for improving x-ray free electron laser performance

Science.gov (United States)

Li, S.; Alverson, S.; Bohler, D.; Egger, A.; Fry, A.; Gilevich, S.; Huang, Z.; Miahnahri, A.; Ratner, D.; Robinson, J.; Zhou, F.

2017-08-01

The photocathode rf gun is one of the most critical components in x-ray free electron lasers. The drive laser strikes the photocathode surface, which emits electrons with properties that depend on the shape of the drive laser. Most free electron lasers use photocathodes with work function in the ultraviolet, a wavelength where direct laser manipulation becomes challenging. In this paper, we present a novel application of a digital micromirror device (DMD) for the 253 nm drive laser at the Linear Coherent Light Source. Laser profile shaping is accomplished through an iterative algorithm that takes into account shaping error and efficiency. Next, we use laser shaping to control the X-ray laser output via an online optimizer, which shows improvement in FEL pulse energy. Lastly, as a preparation for electron beam shaping, we use the DMD to measure the photocathode quantum efficiency across cathode surface with an averaged laser rms spot size of 59 μ m . Our experiments demonstrate promising outlook of using DMD to shape ultraviolet lasers for photocathode rf guns with various applications.

Printing Smart Designs of Light Emitting Devices with Maintained Textile Properties

Directory of Open Access Journals (Sweden)

Inge Verboven

2018-02-01

Full Text Available To maintain typical textile properties, smart designs of light emitting devices are printed directly onto textile substrates. A first approach shows improved designs for alternating current powder electroluminescence (ACPEL devices. A configuration with the following build-up, starting from the textile substrate, was applied using the screen printing technique: silver (10 µm/barium titanate (10 µm/zinc-oxide (10 µm and poly(3,4-ethylenedioxythiophenepoly(styrenesulfonate (10 µm. Textile properties such as flexibility, drapability and air permeability are preserved by implementing a pixel-like design of the printed layers. Another route is the application of organic light emitting devices (OLEDs fabricated out of following layers, also starting from the textile substrate: polyurethane or acrylate (10–20 µm as smoothing layer/silver (200 nm/poly(3,4-ethylenedioxythiophenepoly(styrenesulfonate (35 nm/super yellow (80 nm/calcium/aluminum (12/17 nm. Their very thin nm-range layer thickness, preserving the flexibility and drapability of the substrate, and their low working voltage, makes these devices the possible future in light-emitting wearables.

Organic Light-Emitting Transistors: Materials, Device Configurations, and Operations.

Science.gov (United States)

Zhang, Congcong; Chen, Penglei; Hu, Wenping

2016-03-09

Organic light-emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field-effect transistors (OFETs) and the light-generation capability of organic light-emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state-of-the-art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source-drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μm

Energy Technology Data Exchange (ETDEWEB)

Merghem, K.; Aubin, G.; Ramdane, A. [CNRS, Laboratory for Photonics and Nanostructures, Route de Nozay, 91460 Marcoussis (France); Teissier, R.; Baranov, A. N. [Institute of Electronics and Systems, CNRS UMR 5214, University of Montpellier, 34095 Montpellier (France); Monakhov, A. M. [Ioffe Institute, 194021 Saint Petersburg (Russian Federation)

2015-09-14

We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1 μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6 GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10 kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation.

Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μm

International Nuclear Information System (INIS)

Merghem, K.; Aubin, G.; Ramdane, A.; Teissier, R.; Baranov, A. N.; Monakhov, A. M.

2015-01-01

We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1 μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6 GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10 kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation

Light-Emitting Devices Based on Pyridine-Containing Conjugated Polymers

National Research Council Canada - National Science Library

Wang, Y

1997-01-01

...) as hole transporting/electron blocking polymer, which improves the device efficiency and brightness significantly due to the charge confinement and exciplex emission at the PVK/emitting polymer interface...

Using a terrestrial laser scanner to measure spatiotemporal surface moisture dynamics

Science.gov (United States)

Smit, Y.; Donker, J.; Ruessink, G.

2017-12-01

A terrestrial laser scanner (TLS) is an active remote sensing technique that utilizes the round trip time of an emitted laser beam to provide the range between the laser scanner and the backscattering object. It is routinely used for topographic mapping, forest measurements or 3D city models since it derives useful object representations by means of a dense three-dimensional (3D) point cloud. Here, we present a novel application using the returned intensity of the emitted beam to detect surface moisture with the RIEGL VZ-400. Because this TLS operates at a wavelength near a water absorption band (1550 nm), reflectance is an accurate parameter to measure surface moisture over its full range. Five days of intensive laser scanning were performed on a Dutch beach to illustrate the applicability of the TLS. Concurrent gravimetric surface moisture samples were collected to calibrate the relation between reflectance and surface moisture. Results reveal the reflectance output is a robust parameter to measure surface moisture from the thin upper layer over its full range from 0% to 25%. The obtained calibration curve of the presented TLS, describing the relationship between reflectance and surface moisture, has a root-mean-square error of 2.7% and a correlation coefficient squared of 0.85. This relation holds to about 60 m from the TLS. Within this distance the TLS typically produces O(10^6-10^7) data points, which we averaged into surface moisture maps with a 1 x 1 m resolution. This grid size largely removes small moisture disturbances induced by, for example, footprints or tire tracks, while retaining larger scale trends. Concluding, TLS (RIEGL-VZ 400) is a highly suited technique to accurately and robustly measure spatiotemporal surface moisture variations on a coastal beach with high spatial ( 1 x 1 m) and temporal ( 15-30min.) resolution.

White organic light-emitting devices with high color purity and stability

International Nuclear Information System (INIS)

Bai, Yajie; Liu, Su; Li, Hairong; Liu, Chunjuan; Wang, Jinshun; Chang, Jinxian

2014-01-01

A white organic light-emitting device (WOLED) with dual-emitting layers was presented, in which the blue fluorescent dye 2,5,8,11-terta-tertbutylperylene (TBPe) was doped in 2-methyl-9, 10-di(2-naphthyl)-anthracene (MADN) as a blue-emitting layer, while 5,6,11,12-tetraphenylnaphthacene (rubrene, Rb) was doped in the above-mentioned materials as a yellow-emitting layer. The fabricated monochromatic devices using the blue- and yellow-emitting layer have demonstrated that the direct charge trapping mechanism is the dominant emission mechanism in the yellow OLED. Studies on the WOLEDs with dual-emitting layers have shown that the performances of these devices are strongly susceptible to the thickness of the emitting layer and the stack order of two emitting layers. Structure of ITO(160 nm)/NPB(30 nm)/MADN: 5 wt%TBPe: 3 wt%Rb(10 nm)/MADN: 5 wt%TBPe(20 nm)/BCP (10 nm)/Alq 3 (20 nm)/Al(100 nm) was determined to be the most favorable WOLED. The maximum luminance of 16 000 cd cm −2  at the applied voltage of 13.4 V and Commission International de 1′Eclairage (CIE) coordinates of (0.3263, 0.3437) which is closer to the standard white light (CIE (0.33, 0.33)) than the most recent reported WOLEDs were obtained. Moreover, there is just slight variation of CIE coordinates (ΔCIE x, y = 0.0171, 0.0167; corresponding Δu′v′ = 0.0119) when the current density increases from 10 to 100 mA cm −2 . It reveals that the emissive dopant Rb acts as charge traps to improve electron–hole balance, provides sites for electron–hole recombination and thus makes carriers distribute more evenly in the dual-emitting layers which broaden the recombination zone and improve the stability of the CIE coordinates. (paper)

White organic light-emitting devices incorporating nanoparticles of II-VI semiconductors

International Nuclear Information System (INIS)

Ahn, Jin H; Bertoni, Cristina; Dunn, Steve; Wang, Changsheng; Talapin, Dmitri V; Gaponik, Nikolai; Eychmueller, Alexander; Hua Yulin; Bryce, Martin R; Petty, Michael C

2007-01-01

A blue-green fluorescent organic dye and red-emitting nanoparticles, based on II-VI semiconductors, have been used together in the fabrication of white organic light-emitting devices. In this work, the materials were combined in two different ways: in the form of a blend, and as separate layers deposited on the opposite sides of the substrate. The blended-layer structure provided purer white emission. However, this device also exhibited a number of disadvantages, namely a high drive voltage, a low efficiency and some colour instability. These problems could be avoided by using a device structure that was fabricated using separate dye and nanoparticle layers

Vacuum Deposited Organic Light Emitting Devices on Flexible Substrates

National Research Council Canada - National Science Library

Forrest, Stephen

2002-01-01

The objective of this eight year program was to demonstrate both passive and active matrix, flexible, small scale displays based on small molecular weight organic light emitting device (OLED) technology...

Dilute nitride vertical-cavity surface-emitting lasers

International Nuclear Information System (INIS)

Jouhti, T; Okhotnikov, O; Konttinen, J; Gomes, L A; Peng, C S; Karirinne, S; Pavelescu, E-M; Pessa, M

2003-01-01

A novel quaternary compound semiconductor material, Ga 1-x In x N y As 1-y (0 0.65 In 0.35 N 0.014 As 0.986 /GaAs quantum wells with special strain-mediating layers. The laser characterization was carried out by using a fibre pigtailed 980 nm pump laser diode, 980/1300 nm wavelength division multiplexer and an optical spectrum analyser. A high optical output power of 3.5 mW was coupled lenslessly into a standard single-mode fibre

High-power, format-flexible, 885-nm vertical-cavity surface-emitting laser arrays

Science.gov (United States)

Wang, Chad; Talantov, Fedor; Garrett, Henry; Berdin, Glen; Cardellino, Terri; Millenheft, David; Geske, Jonathan

2013-03-01

High-power, format flexible, 885 nm vertical-cavity surface-emitting laser (VCSEL) arrays have been developed for solid-state pumping and illumination applications. In this approach, a common VCSEL size format was designed to enable tiling into flexible formats and operating configurations. The fabrication of a common chip size on ceramic submount enables low-cost volume manufacturing of high-power VCSEL arrays. This base VCSEL chip was designed to be 5x3.33 mm2, and produced up to 50 Watts of peak continuous wave (CW) power. To scale to higher powers, multiple chips can be tiled into a combination of series or parallel configurations tailored to the application driver conditions. In actively cooled CW operation, the VCSEL array chips were packaged onto a single water channel cooler, and we have demonstrated 0.5x1, 1x1, and 1x3 cm2 formats, producing 150, 250, and 500 Watts of peak power, respectively, in under 130 A operating current. In QCW operation, the 1x3 cm2 VCSEL module, which contains 18 VCSEL array chips packaged on a single water cooler, produced over 1.3 kW of peak power. In passively cooled packages, multiple chip configurations have been developed for illumination applications, producing over 300 Watts of peak power in QCW operating conditions. These VCSEL chips use a substrate-removed structure to allow for efficient thermal heatsinking to enable high-power operation. This scalable, format flexible VCSEL architecture can be applied to wavelengths ranging from 800 to 1100 nm, and can be used to tailor emission spectral widths and build high-power hyperspectral sources.

Ion Production by Laser Impact on a Silver Surface

DEFF Research Database (Denmark)

Christensen, Bo Toftmann; Schou, Jørgen

Even at moderate fluence (0.6 -2.4 J/cm2) laser impact on metals in the UV regime results in a significant number of ions emitted from the surface. Even at this low fluence the particles ejected from a surface interact with each other in a so-called laser ablation plume. The ablated particles...... are largely neutrals at low fluence, but the fraction of ions increases strongly with fluence. We have irradiated silver in a vacuum chamber (~ 10-7 mbar) with a Nd:YAG laser at a wavelength of 355 nm. The ion flow in different directions has been measured with a hemispherical array of Langmuir probes...... range considered is also a typical range for pulsed laser deposition (PLD), by which the material is collected on a suitable substrate for thin film growth. PLD has the advantage compared with other film deposition methods, that even a complicated stoichiometry, e.g. metal oxides or alloys, can...

GREEN LIGHT EMITTING TRICOMPONENT LUMINOPHORS OF 2-NAPHTHOL FOR CONSTRUCTION OF ORGANIC LIGHT EMITTING DEVICES

OpenAIRE

K. G. MANE , P. B. NAGORE , DR. S. R. PUJARI

2018-01-01

This article presents a previous study and incredible progress in basic theoretical modeling, and working for organic light-emitting devices (OLEDs) including preparation and characteristic studies of Organo- Luminescent Materials by conventional solid state reaction technique.

Organic light-emitting devices with fullerene/aluminum composite anode

International Nuclear Information System (INIS)

Song, Q.L.; Li, C.M.; Wang, M.L.; Sun, X.Y.

2008-01-01

Our previous work demonstrates that fullerene/Aluminum (C 60 /Al) can be used as a composite anode in organic solar cells. In this work, we report that an organic light emitting devices (OLEDs) can be made with the C 60 /Al composite anode as well. The OLEDs show comparable current density and brightness to the traditional devices with the indium tin oxide anode

Electrically pumped edge-emitting photonic bandgap semiconductor laser

Science.gov (United States)

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

Micromachining and dicing of sapphire, gallium nitride and micro LED devices with UV copper vapour laser

International Nuclear Information System (INIS)

Gu, E.; Jeon, C.W.; Choi, H.W.; Rice, G.; Dawson, M.D.; Illy, E.K.; Knowles, M.R.H.

2004-01-01

Gallium nitride (GaN) and sapphire are important materials for fabricating photonic devices such as high brightness light emitting diodes (LEDs). These materials are strongly resistant to wet chemical etching and also, low etch rates restrict the use of dry etching. Thus, to develop alternative high resolution processing and machining techniques for these materials is important in fabricating novel photonic devices. In this work, a repetitively pulsed UV copper vapour laser (255 nm) has been used to machine and dice sapphire, GaN and micro LED devices. Machining parameters were optimised so as to achieve controllable machining and high resolution. For sapphire, well-defined grooves 30 μm wide and 430 μm deep were machined. For GaN, precision features such as holes on a tens of micron length scale have been fabricated. By using this technique, compact micro LED chips with a die spacing 100 and a 430 μm thick sapphire substrate have been successfully diced. Measurements show that the performances of LED devices are not influenced by the UV laser machining. Our results demonstrate that the pulsed UV copper vapour laser is a powerful tool for micromachining and dicing of photonic materials and devices

Direct visualization of the in-plane leakage of high-order transverse modes in vertical-cavity surface-emitting lasers mediated by oxide-aperture engineering

Science.gov (United States)

Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Burger, S.; Schmidt, F.; Ledentsov, N. N.

2016-03-01

Oxide-confined apertures in vertical cavity surface emitting laser (VCSEL) can be engineered such that they promote leakage of the transverse optical modes from the non- oxidized core region to the selectively oxidized periphery of the device. The reason of the leakage is that the VCSEL modes in the core can be coupled to tilted modes in the periphery if the orthogonality between the core mode and the modes at the periphery is broken by the oxidation-induced optical field redistribution. Three-dimensional modeling of a practical VCSEL design reveals i) significantly stronger leakage losses for high-order transverse modes than that of the fundamental one as high-order modes have a higher field intensity close to the oxide layers and ii) narrow peaks in the far-field profile generated by the leaky component of the optical modes. Experimental 850-nm GaAlAs leaky VCSELs produced in the modeled design demonstrate i) single-mode lasing with the aperture diameters up to 5μm with side mode suppression ratio >20dB at the current density of 10kA/cm2; and ii) narrow peaks tilted at 37 degrees with respect to the vertical axis in excellent agreement with the modeling data and confirming the leaky nature of the modes and the proposed mechanism of mode selection. The results indicate that in- plane coupling of VCSELs, VCSELs and p-i-n photodiodes, VCSEL and delay lines is possible allowing novel photonic integrated circuits. We show that the approach enables design of oxide apertures, air-gap apertures, devices created by impurity-induced intermixing or any combinations of such designs through quantitative evaluation of the leaky emission.

Oxycarbonitride phosphors and light emitting devices using the same

Science.gov (United States)

Li, Yuanqiang; Romanelli, Michael Dennis; Tian, Yongchi

2013-10-08

Disclosed herein is a novel family of oxycarbidonitride phosphor compositions and light emitting devices incorporating the same. Within the sextant system of M--Al--Si--O--N--C--Ln and quintuplet system of M--Si--O--N--C--Ln (M=alkaline earth element, Ln=rare earth element), the phosphors are composed of either one single crystalline phase or two crystalline phases with high chemical and thermal stability. In certain embodiments, the disclosed phosphor of silicon oxycarbidonitrides emits green light at wavelength between 530-550 nm. In further embodiments, the disclosed phosphor compositions emit blue-green to yellow light in a wavelength range of 450-650 nm under near-UV and blue light excitation.

A Simple Device for Lens-to-Sample Distance Adjustment in Laser-Induced Breakdown Spectroscopy (LIBS).

Science.gov (United States)

Cortez, Juliana; Farias Filho, Benedito B; Fontes, Laiane M; Pasquini, Celio; Raimundo, Ivo M; Pimentel, Maria Fernanda; de Souza Lins Borba, Flávia

2017-04-01

A simple device based on two commercial laser pointers is described to assist in the analysis of samples that present uneven surfaces and/or irregular shapes using laser-induced breakdown spectroscopy (LIBS). The device allows for easy positioning of the sample surface at a reproducible distance from the focusing lens that conveys the laser pulse to generate the micro-plasma in a LIBS system, with reproducibility better than ±0.2 mm. In this way, fluctuations in the fluence (J cm -2 ) are minimized and the LIBS analytical signals can be obtained with a better precision even when samples with irregular surfaces are probed.

Nanocrystalline silicon as the light emitting material of a field emission display device

International Nuclear Information System (INIS)

Biaggi-Labiosa, A; Sola, F; Resto, O; Fonseca, L F; Gonzalez-BerrIos, A; Jesus, J De; Morell, G

2008-01-01

A nanocrystalline Si-based paste was successfully tested as the light emitting material in a field emission display test device that employed a film of carbon nanofibers as the electron source. Stable emission in the 550-850 nm range was obtained at 16 V μm -1 . This relatively low field required for intense cathodoluminescence (CL) from the PSi paste may lead to longer term reliability of both the electron emitting and the light emitting materials, and to lower power consumption. Here we describe the synthesis, characterization, and analyses of the light emitting nanostructured Si paste and the electron emitting C nanofibers used for building the device, including x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The corresponding spectra and field emission curves are also shown and discussed

Printing Smart Designs of Light Emitting Devices with Maintained Textile Properties †

Science.gov (United States)

Verboven, Inge; Stryckers, Jeroen; Mecnika, Viktorija; Vandevenne, Glen; Jose, Manoj

2018-01-01

To maintain typical textile properties, smart designs of light emitting devices are printed directly onto textile substrates. A first approach shows improved designs for alternating current powder electroluminescence (ACPEL) devices. A configuration with the following build-up, starting from the textile substrate, was applied using the screen printing technique: silver (10 µm)/barium titanate (10 µm)/zinc-oxide (10 µm) and poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (10 µm). Textile properties such as flexibility, drapability and air permeability are preserved by implementing a pixel-like design of the printed layers. Another route is the application of organic light emitting devices (OLEDs) fabricated out of following layers, also starting from the textile substrate: polyurethane or acrylate (10–20 µm) as smoothing layer/silver (200 nm)/poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (35 nm)/super yellow (80 nm)/calcium/aluminum (12/17 nm). Their very thin nm-range layer thickness, preserving the flexibility and drapability of the substrate, and their low working voltage, makes these devices the possible future in light-emitting wearables. PMID:29438276

Laser Processed Silver Nanowire Network Transparent Electrodes for Novel Electronic Devices

Science.gov (United States)

Spechler, Joshua Allen

Silver nanowire network transparent conducting layers are poised to make headway into a space previously dominated by transparent conducting oxides due to the promise of a flexible, scaleable, lab-atmosphere processable alternative. However, there are many challenges standing in the way between research scale use and consumer technology scale adaptation of this technology. In this thesis we will explore many, and overcome a few of these challenges. We will address the poor conductivity at the narrow nanowire-nanowire junction points in the network by developing a laser based process to weld nanowires together on a microscopic scale. We address the need for a comparative metric for transparent conductors in general, by taking a device level rather than a component level view of these layers. We also address the mechanical, physical, and thermal limitations to the silver nanowire networks by making composites from materials including a colorless polyimide and titania sol-gel. Additionally, we verify our findings by integrating these processes into devices. Studying a hybrid organic/inorganic heterojunction photovoltaic device we show the benefits of a laser processed electrode. Green phosphorescent organic light emitting diodes fabricated on a solution phase processed silver nanowire based electrode show favorable device metrics compared to a conductive oxide electrode based control. The work in this thesis is intended to push the adoption of silver nanowire networks to further allow new device architectures, and thereby new device applications.

Ultra-thin fluoropolymer buffer layer as an anode stabilizer of organic light emitting devices

International Nuclear Information System (INIS)

Yang, Nam Chul; Lee, Jaeho; Song, Myung-Won; Ahn, Nari; Kim, Mu-Hyun; Lee, Songtaek; Chin, Byung Doo

2007-01-01

We have investigated the effect of thin fluoro-acrylic polymer as an anode stabilizer on the lifetime of an organic light emitting device (OLED). Surface chemical properties of commercial fluoropolymer, FC-722 (Fluorad(TM) of 3M), on indium-tin oxide (ITO) were characterized by x-ray photoemission spectroscopy. An OLED with 1 nm thick fluoropolymeric film showed identical brightness and efficiency behaviour and improved operational stability compared with the reference device with UV-O 3 treated ITO. The improvement in the lifetime was accompanied by the suppression of the voltage increase at the initial stage of constant-current driving, which can be attributed to the action of the FC-722 layer by smoothing the ITO surface. Fluoropolymer coating, therefore, improves the lifetime of the small molecular OLED by the simple and reliable anode-stabilizing process

Hybrid perovskites: Approaches towards light-emitting devices

KAUST Repository

Alias, Mohd Sharizal

2016-10-06

The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted extensive research for photonic device applications. Using the bromide halide as an example, we present key approaches of our work towards realizing efficient perovskites based light-emitters. The approaches involved determination of optical constants for the hybrid perovskites thin films, fabrication of photonic nanostructures in the form of subwavelength grating reflector patterned directly on the hybrid perovskites as light manipulation layer, and enhancing the emission property of the hybrid perovskites by using microcavity structure. Our results provide a platform for realization of hybrid perovskites based light-emitting devices for solid-state lighting and display applications. © 2016 IEEE.

Hybrid perovskites: Approaches towards light-emitting devices

KAUST Repository

Alias, Mohd Sharizal; Dursun, Ibrahim; Priante, Davide; Saidaminov, Makhsud I.; Ng, Tien Khee; Bakr, Osman; Ooi, Boon S.

2016-01-01

The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted extensive research for photonic device applications. Using the bromide halide as an example, we present key approaches of our work towards realizing efficient perovskites based light-emitters. The approaches involved determination of optical constants for the hybrid perovskites thin films, fabrication of photonic nanostructures in the form of subwavelength grating reflector patterned directly on the hybrid perovskites as light manipulation layer, and enhancing the emission property of the hybrid perovskites by using microcavity structure. Our results provide a platform for realization of hybrid perovskites based light-emitting devices for solid-state lighting and display applications. © 2016 IEEE.

21 CFR 872.1745 - Laser fluorescence caries detection device.

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Laser fluorescence caries detection device. 872... SERVICES (CONTINUED) MEDICAL DEVICES DENTAL DEVICES Diagnostic Devices § 872.1745 Laser fluorescence caries detection device. (a) Identification. A laser fluorescence caries detection device is a laser, a...

OPTICAL DEFLECTOR CREATION FOR LASER THERAPEUTIC DEVICES

Directory of Open Access Journals (Sweden)

V. N. Baranov

2014-03-01

Full Text Available The paper deals with creation of optical deflector for management of laser radiation in physiotherapeutic devices. Design features and operation principles of electro-optical, optical-acoustic and mechanical deflectors, giving the possibility to carry out continuous or discrete scanning of a laser beam are shown. Operation mechanism of the mechanical type deflector on the example of domestic laser therapeutic scanners is described in detail. Application possibility in clinical practice for heating technique of the acupuncture points by volumetric scanning of tissues by the radiation of semiconductor lasers on wave lengths equal to 0,67 and 0,85 μm is investigated. Creation justification of the new type deflector is given. Comparison between stable and labile techniques of radiation is carried out. It is shown that more intensive warming up of a skin surface in acupuncture point projection is observed at volumetric scanning, rather than at planar scanning by laser beams. Temperature increase on a skin surface in projection of acupuncture points is detected at radiation in both the visible spectrum range (0,67 μm and the infrared range (0,85 μm. It gives the possibility to apply this scanning method to thermal photo-activation of the point and to extend an existing arsenal of laser reflexology methods. The optical deflector is offered for medical industry, making it possible to carry out volumetric scanning of a laser beam and to facilitate the medical personnel’s work in laser therapy and reflexology consulting rooms.

Astigmatism-free high-brightness 1060 nm edge-emitting lasers with narrow circular beam profile.

Science.gov (United States)

Miah, Md Jarez; Kalosha, Vladimir P; Bimberg, Dieter; Pohl, Johannes; Weyers, Markus

2016-12-26

1060 nm high-brightness vertical broad-area edge-emitting lasers providing anastigmatic high optical power into a narrow circular beam profile are demonstrated. Ridge-waveguide (RW) lasers yield record 2.2 W single-transverse mode power in the 1060-nm wavelength range under continuous-wave (cw) operation at room temperature with excellent beam quality factor M2 ≤ 2. Independent of operating current the astigmatism is only 2.5 µm. 3 mm long broad-area (BA) lasers produce a θvert as narrow as 9° full width at half maximum, which agrees well with our simulation results, being insensitive to drive current. 5 mm long BA lasers deliver highest ever reported cw 12 W multimode output power among lasers showing θvert <10° in the 1060-nm wavelength range. The emitted laser beams from both RW and BA lasers show a perfect circular shape with ≤10° divergence angle at record 2.1 W and 4.2 W cw-mode output power, respectively.

Tritium contaminated surface monitoring with a solid - state device

International Nuclear Information System (INIS)

Culcer, Mihai; Iliescu, Mariana; Curuia, Marian; Enache, Adrian; Stefanescu, Ioan; Ducu, Catalin; Malinovschi, Viorel

2004-01-01

The low energy of betas makes tritium difficult to detect. However, there are several methods used in tritium detection, such as liquid scintillation and ionization chambers. Tritium on or near a surface can be also detected using proportional counters and, recently, solid state devices. The paper presents our results in the design and achievement of a surface tritium monitor using a PIN photodiode as a solid state charged particle detector to count betas emitted from the surface. That method allows continuous, real-time and non-destructively measuring of tritium. (authors)

Single-mode 850-nm vertical-cavity surface-emitting lasers with Zn-diffusion and oxide-relief apertures for > 50 Gbit/sec OOK and 4-PAM transmission

Science.gov (United States)

Shi, Jin-Wei; Wei, Chia-Chien; Chen, Jyehong; Ledentsov, N. N.; Yang, Ying-Jay

2017-02-01

Vertical-cavity surface-emitting lasers (VCSELs) has become the most important light source in the booming market of short-reach (targeted at 56 Gbit/sec data rate per channel (CEI-56G) with the total data rate up to 400 Gbit/sec. However, the serious modal dispersion of multi-mode fiber (MMF), limited speed of VCSEL, and its high resistance (> 150 Ω) seriously limits the >50 Gbit/sec linking distance (50 Gbit/sec transmission due to that it can save one-half of the required bandwidth. Nevertheless, a 4.7 dB optical power penalty and the linearity of transmitter would become issues in the 4-PAM linking performance. Besides, in the modern OI system, the optics transreceiver module must be packaged as close as possible with the integrated circuits (ICs). The heat generated from ICs will become an issue in speed of VSCEL. Here, we review our recent work about 850 nm VCSEL, which has unique Zn-diffusion/oxide-relief apertures and special p- doping active layer with strong wavelength detuning to further enhance its modulation speed and high-temperature (85°C) performances. Single-mode (SM) devices with high-speed ( 26 GHz), reasonable resistance ( 70 Ω) and moderate output power ( 1.5 mW) can be achieved. Error-free 54 Gbit/sec OOK transmission through 1km MMF has been realized by using such SM device with signal processing techniques. Besides, the volterra nonlinear equalizer has been applied in our 4-PAM 64 Gbit/sec transmission through 2-km OM4 MMF, which significantly enhance the linearity of device and outperforms fed forward equalization (FFE) technique. Record high bit-rate distance product of 128.km is confirmed for optical-interconnect applications.

Integration of electro-absorption modulator in a vertical-cavity surface-emitting laser

Science.gov (United States)

Marigo-Lombart, L.; Calvez, S.; Arnoult, A.; Rumeau, A.; Viallon, C.; Thienpont, H.; Panajotov, K.; Almuneau, G.

2018-02-01

VCSELs became dominant laser sources in many short optical link applications such as datacenter, active cables, etc. Actual standards and commercialized VCSEL are providing 25 Gb/s data rates, but new solutions are expected to settle the next device generation enabling 100 Gb/s. Directly modulated VCSEL have been extensively studied and improved to reach bandwidths in the range of 26-32 GHz [Chalmers, TU Berlin], however at the price of increased applied current and thus reduced device lifetime. Furthermore, the relaxation oscillation limit still subsists with this solution. Thus, splitting the emission and the modulation functions as done with DFB lasers is a very promising alternative [TI-Tech, TU Berlin]. Here, we study the vertical integration of an ElectroAbsorption Modulator (EAM) within a VCSEL, where the output light of the VCSEL is modulated through the EAM section. In our original design, we finely optimized the EAM design to maximize the modulation depth by implementing perturbative Quantum Confined Stark Effect (QCSE) calculations, while designing the vertical integration of the EAM without penalty on the VCSEL static performances. We will present the different fabricated vertical structures, as well as the experimental electrical and optical static measurements for those configurations demonstrating a very good agreement with the reflectivity and absorption simulations obtained for both the VCSEL and the EAM-VCSEL structures. Finally, to reach very high frequency modulation we studied the BCB electrical properties up to 110 GHz and investigated coplanar and microstrip lines access to decrease both the parasitic capacitance and the influence of the substrate.

850-nm Zn-diffusion vertical-cavity surface-emitting lasers with with oxide-relief structure for high-speed and energy-efficient optical interconnects from very-short to medium (2km) reaches

Science.gov (United States)

Shi, Jin-Wei; Wei, Chia-Chien; Chen, Jason (Jyehong); Yang, Ying-Jay

2015-03-01

High-speed and "green" ~850 nm vertical-cavity surface-emitting lasers (VCSELs) have lately attracted lots of attention due to their suitability for applications in optical interconnects (OIs). To further enhance the speed and its maximum allowable linking distance of VCSELs are two major trends to meet the requirement of OI in next generation data centers. Recently, by use of the advanced 850 nm VCSEL technique, data rate as high as 64 Gbit/sec over 57m and 20 Gbit/sec over 2km MMF transmission have been demonstrated, respectively. Here, we will review our recent work about 850 nm Zn-diffusion VCSELs with oxide-relief apertures to further enhance the above-mentioned performances. By using Zn-diffusion, we can not only reduce the device resistance but also manipulate the number of optical modes to benefit transmission. Combing such device, which has excellent single-mode (SMSR >30 dB) and high-power (~7mW) performance, with advanced modulation format (OFDM), record-high bit-rate-distance-product through MMF (2.3 km×28 Gbit/sec) has been demonstrated. Furthermore, by selective etching away the oxide aperture inside Zn-diffusion VCSEL, significant enhancement of device speed, D-factor, and reliability can be observed. With such unique VCSEL structure, >40 Gbit/sec energy-efficient transmission over 100m MMF under extremely low-driving current density (<10kA/cm2) has been successfully demonstrated.

Laser Safety Evaluation of the MILES and Mini MILES Laser Emitting Components; TOPICAL

International Nuclear Information System (INIS)

AUGUSTONI, ARNOLD L.

2002-01-01

Laser safety evaluation and output emission measurements were performed (during October and November 2001) on SNL MILES and Mini MILES laser emitting components. The purpose, to verify that these components, not only meet the Class 1 (eye safe) laser hazard criteria of the CDRH Compliance Guide for Laser Products and 21 CFR 1040 Laser Product Performance Standard; but also meet the more stringent ANSI Std. z136.1-2000 Safe Use of Lasers conditions for Class 1 lasers that govern SNL laser operations. The results of these measurements confirmed that all of the Small Arms Laser Transmitters, as currently set (''as is''), meet the Class 1 criteria. Several of the Mini MILES Small Arms Transmitters did not. These were modified and re-tested and now meet the Class 1 laser hazard criteria. All but one System Controllers (hand held and rifle stock) met class 1 criteria for single trigger pulls and all presented Class 3a laser hazard levels if the trigger is held (continuous emission) for more than 5 seconds on a single point target. All units were Class 3a for ''aided'' viewing. These units were modified and re-tested and now meet the Class 1 hazard criteria for both ''aided'' as well as ''unaided'' viewing. All the Claymore Mine laser emitters tested are laser hazard Class 1 for both ''aided'' as well as ''unaided'' viewing

Systematic characterization of a 1550 nm microelectromechanical (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) with 7.92 THz tuning range for terahertz photomixing systems

Science.gov (United States)

Haidar, M. T.; Preu, S.; Cesar, J.; Paul, S.; Hajo, A. S.; Neumeyr, C.; Maune, H.; Küppers, F.

2018-01-01

Continuous-wave (CW) terahertz (THz) photomixing requires compact, widely tunable, mode-hop-free driving lasers. We present a single-mode microelectromechanical system (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) featuring an electrothermal tuning range of 64 nm (7.92 THz) that exceeds the tuning range of commercially available distributed-feedback laser (DFB) diodes (˜4.8 nm) by a factor of about 13. We first review the underlying theory and perform a systematic characterization of the MEMS-VCSEL, with particular focus on the parameters relevant for THz photomixing. These parameters include mode-hop-free CW tuning with a side-mode-suppression-ratio >50 dB, a linewidth as narrow as 46.1 MHz, and wavelength and polarization stability. We conclude with a demonstration of a CW THz photomixing setup by subjecting the MEMS-VCSEL to optical beating with a DFB diode driving commercial photomixers. The achievable THz bandwidth is limited only by the employed photomixers. Once improved photomixers become available, electrothermally actuated MEMS-VCSELs should allow for a tuning range covering almost the whole THz domain with a single system.

Laser generation of proton beams for the production of short-lived positron emitting radioisotopes

International Nuclear Information System (INIS)

Spencer, I.; Ledingham, K.W.D.; Singhal, R.P.; McCanny, T.; McKenna, P.; Clark, E.L.; Krushelnick, K.; Zepf, M.; Beg, F.N.; Tatarakis, M.; Dangor, A.E.; Norreys, P.A.; Clarke, R.J.; Allott, R.M.; Ross, I.N.

2001-01-01

Protons of energies up to 37 MeV have been generated when ultra-intense lasers (up to 10 20 W cm -2 ) interact with hydrogen containing solid targets. These protons can be used to induce nuclear reactions in secondary targets to produce β + -emitting nuclei of relevance to the nuclear medicine community, namely 11 C and 13 N via (p, n) and (p,α) reactions. Activities of the order of 200 kBq have been measured from a single laser pulse interacting with a thin solid target. The possibility of using ultra-intense lasers to produce commercial amounts of short-lived positron emitting sources for positron emission tomography (PET) is discussed

Single-mode electrically pumped GaSb-based VCSELs emitting continuous-wave at 2.4 and 2.6 μm

International Nuclear Information System (INIS)

Bachmann, Alexander; Arafin, Shamsul; Kashani-Shirazi, Kaveh

2009-01-01

Vertical-cavity surface-emitting lasers (VCSELs) are perfect light sources for spectroscopic applications, where properties such as continuous-wave (cw) operation, single-mode emission, high lifetime and often low power consumption are crucial. For applications such as tunable diode laser absorption spectroscopy (TDLAS), there is a growing interest in laser devices emitting in the near- to mid-infrared wavelength range, where many environmentally and technologically important gases show strong absorption lines. The (AlGaIn)(AsSb) material system based on GaSb is the material of choice for covering the 2.0-3.3 μm range. In this paper, we report on electrically pumped single-mode VCSELs with emission wavelengths of 2.4 and 2.6 μm, operating cw at room temperature and beyond. By (electro-) thermal tuning, the emission wavelength can be tuned mode-hop free over a range of several nanometers. In addition, low threshold currents of several milliamperes promise mobile application. In the devices, a structured buried tunnel junction with subsequent overgrowth has been used in order to achieve efficient current confinement, reduced optical losses and increased electrical conductivity. Furthermore, strong optical confinement is introduced in the lasers due to laterally differing cavity lengths.

Detection of a Surface-Breaking Crack by Using the Surface Wave of a Laser Ultrasound

International Nuclear Information System (INIS)

Park, Seung-Kyu; Baik, Sung-Hoon; Jung, Hyun-Kyu; Joo, Young-Sang; Cha, Hyung-Ki; Kang, Young-June

2006-01-01

A laser ultrasonic system is a non-contact inspection device with a high spatial resolution and a wide-band spectrum. Also it provides absolute measurements of the moving distance and can be applied to the hard-to access locations with curved or rough surfaces like a nuclear power plant. Several laser ultrasonic techniques are applied for the detection of micro cracks in a nuclear power plant. Also, laser ultrasonic techniques are used to measure the grain size of materials and to detect cracks in railroads and aircrafts. Though the laser ultrasonic inspection system is widely applicable, it is comparatively expensive and it provides a low signal-to-noise ratio when compared to the conventional piezoelectric transducers. Many studies have been carried out to improve the system performance. One of the widely used measurement devices of a ultrasound is the Confocal Fabry-Perot Interferometer(CFPI) with a dynamic stabilizer. The dynamic stabilizer improves the stability of the CFPI by adaptively maintaining the optimum working status at the measuring time of the CFPI. In this paper, we have investigated the detection methods of the depth of a surface-breaking crack by using the surface wave of a laser ultrasound. We have fabricated a laser ultrasonic inspection system on an optical table by using a pulse laser, a CFPI with a dynamic stabilizer and a computer. The computer acquires the laser ultrasound by using a high speed A/D converter with a sampling rate of 1000 MHz. The dynamic stabilizer stabilizes the CFPI by adaptively maintaining it at an optimum status when the laser ultrasound is generated. The computer processes the ultrasonic signal in real time to extract the depth information of a surface-breaking crack. We extracted the depth information from the peak-to-valley values in the time domain and also from the center frequencies of the spectrum in the frequency domain

Planar integrated metasurfaces for highly-collimated terahertz quantum cascade lasers

Science.gov (United States)

Liang, Guozhen; Dupont, Emmanuel; Fathololoumi, Saeed; Wasilewski, Zbigniew R.; Ban, Dayan; Liang, Hou Kun; Zhang, Ying; Yu, Siu Fung; Li, Lianhe H.; Davies, Alexander Giles; Linfield, Edmund H.; Liu, Hui Chun; Wang, Qi Jie

2014-01-01

We report planar integration of tapered terahertz (THz) frequency quantum cascade lasers (QCLs) with metasurface waveguides that are designed to be spoof surface plasmon (SSP) out-couplers by introducing periodically arranged SSP scatterers. The resulting surface-emitting THz beam profile is highly collimated with a divergence as narrow as ~4° × 10°, which indicates a good waveguiding property of the metasurface waveguide. In addition, the low background THz power implies a high coupling efficiency for the THz radiation from the laser cavity to the metasurface structure. Furthermore, since all the structures are in-plane, this scheme provides a promising platform where well-established surface plasmon/metasurface techniques can be employed to engineer the emitted beam of THz QCLs controllably and flexibly. More importantly, an integrated active THz photonic circuit for sensing and communication applications could be constructed by incorporating other optoelectronic devices such as Schottky diode THz mixers, and graphene modulators and photodetectors. PMID:25403796

Enhancement of efficiencies for tandem green phosphorescent organic light-emitting devices with a p-type charge generation layer

Energy Technology Data Exchange (ETDEWEB)

Yoo, Byung Soo; Jeon, Young Pyo; Lee, Dae Uk; Kim, Tae Whan, E-mail: twk@hanayng.ac.kr

2014-10-15

The operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the organic light-emitting device with a molybdenum trioxide layer. The maximum brightness of the tandem green phosphorescent organic light-emitting device at 21.9 V was 26,540 cd/m{sup 2}. The dominant peak of the electroluminescence spectra for the devices was related to the fac-tris(2-phenylpyridine) iridium emission. - Highlights: • Tandem OLEDs with CGL were fabricated to enhance their efficiency. • The operating voltage of the tandem OLED with a HAT-CN layer was improved by 3%. • The efficiency and brightness of the tandem OLED were 13.9 cd/A and 26,540 cd/m{sup 2}. • Efficiency of the OLED with a HAT-CN layer was lower than that with a MoO{sub 3} layer. - Abstract: Tandem green phosphorescent organic light-emitting devices with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile or a molybdenum trioxide charge generation layer were fabricated to enhance their efficiency. Current density–voltage curves showed that the operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the corresponding organic light-emitting device with a molybdenum trioxide layer. The efficiency and the brightness of the tandem green phosphorescent organic light-emitting device were 13.9 cd/A and 26,540 cd/m{sup 2}, respectively. The current efficiency of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was lower by 1.1 times compared to that of the corresponding organic light-emitting device with molybdenum trioxide layer due to the decreased charge generation and transport in the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer resulting from triplet–triplet exciton annihilation.

Laser-induced surface modification of biopolymers – micro/nanostructuring and functionalization

Science.gov (United States)

Stankova, N. E.; Atanasov, P. A.; Nedyalkov, N. N.; Tatchev, Dr; Kolev, K. N.; Valova, E. I.; Armyanov, St. A.; Grochowska, K.; Śliwiński, G.; Fukata, N.; Hirsch, D.; Rauschenbach, B.

2018-03-01

The medical-grade polydimethylsiloxane (PDMS) elastomer is a widely used biomaterial in medicine for preparation of high-tech devices because of its remarkable properties. In this paper, we present experimental results on surface modification of PDMS elastomer by using ultraviolet, visible, and near-infrared ns-laser system and investigation of the chemical composition and the morphological structure inside the treated area in dependence on the processing parameters – wavelength, laser fluence and number of pulses. Remarkable chemical transformations and changes of the morphological structure were observed, resulting in the formation of a highly catalytically active surface, which was successfully functionalized via electroless Ni and Pt deposition by a sensitizing-activation free process. The results obtained are very promising in view of applying the methods of laser-induced micro- and nano-structuring and activation of biopolymers’ surface and further electroless metal plating to the preparation of, e.g., multielectrode arrays (MEAs) devices in neural and muscular surface interfacing implantable systems.

Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

International Nuclear Information System (INIS)

Miller, Mary A.; Tangyunyong, Paiboon; Cole, Edward I.

2016-01-01

Laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes (LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increased leakage is not present in devices without AVM signals. Transmission electron microscopy analysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)

Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

Energy Technology Data Exchange (ETDEWEB)

Miller, Mary A.; Tangyunyong, Paiboon; Cole, Edward I. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1086 (United States)

2016-01-14

Laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes (LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increased leakage is not present in devices without AVM signals. Transmission electron microscopy analysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].

Principles of phosphorescent organic light emitting devices.

Science.gov (United States)

Minaev, Boris; Baryshnikov, Gleb; Agren, Hans

2014-02-07

Organic light-emitting device (OLED) technology has found numerous applications in the development of solid state lighting, flat panel displays and flexible screens. These applications are already commercialized in mobile phones and TV sets. White OLEDs are of especial importance for lighting; they now use multilayer combinations of organic and elementoorganic dyes which emit various colors in the red, green and blue parts of the visible spectrum. At the same time the stability of phosphorescent blue emitters is still a major challenge for OLED applications. In this review we highlight the basic principles and the main mechanisms behind phosphorescent light emission of various classes of photofunctional OLED materials, like organic polymers and oligomers, electron and hole transport molecules, elementoorganic complexes with heavy metal central ions, and clarify connections between the main features of electronic structure and the photo-physical properties of the phosphorescent OLED materials.

Graphene devices based on laser scribing technology

Science.gov (United States)

Qiao, Yan-Cong; Wei, Yu-Hong; Pang, Yu; Li, Yu-Xing; Wang, Dan-Yang; Li, Yu-Tao; Deng, Ning-Qin; Wang, Xue-Feng; Zhang, Hai-Nan; Wang, Qian; Yang, Zhen; Tao, Lu-Qi; Tian, He; Yang, Yi; Ren, Tian-Ling

2018-04-01

Graphene with excellent electronic, thermal, optical, and mechanical properties has great potential applications. The current devices based on graphene grown by micromechanical exfoliation, chemical vapor deposition (CVD), and thermal decomposition of silicon carbide are still expensive and inefficient. Laser scribing technology, a low-cost and time-efficient method of fabricating graphene, is introduced in this review. The patterning of graphene can be directly performed on solid and flexible substrates. Therefore, many novel devices such as strain sensors, acoustic devices, memory devices based on laser scribing graphene are fabricated. The outlook and challenges of laser scribing technology have also been discussed. Laser scribing may be a potential way of fabricating wearable and integrated graphene systems in the future.

True Yellow Light-Emitting Diodes as Phosphor for Tunable Color-Rendering Index Laser-Based White Light

KAUST Repository

Janjua, Bilal; Ng, Tien Khee; Zhao, Chao; Prabaswara, Aditya; Consiglio, Giuseppe Bernardo; Priante, Davide; Shen, Chao; Elafandy, Rami T.; Anjum, Dalaver H.; Alhamoud, Abdullah A.; Alatawi, Abdullah A.; Yang, Yang; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2016-01-01

An urgent challenge for the lighting research community is the lack of efficient optical devices emitting in between 500 and 600 nm, resulting in the “green-yellow gap”. In particular, true green (∼555 nm) and true yellow (∼590 nm), along with blue and red, constitute four technologically important colors. The III-nitride material system, being the most promising choice of platform to bridge this gap, still suffers from high dislocation density and poor crystal quality in realizing high-power, efficient devices. Particularly, the high polarization fields in the active region of such 2D quantum confined structures prevent efficient recombination of carriers. Here we demonstrate a true yellow nanowire (NW) light emitting diode (LED) with peak emission of 588 nm at 29.5 A/cm2 (75 mA in a 0.5 × 0.5 mm2 device) and a low turn-on voltage of ∼2.5 V, while having an internal quantum efficiency of 39%, and without “efficiency droop” up to an injection current density of 29.5 A/cm2. By mixing yellow light from a NW LED in reflective configuration with that of a red, green, and blue laser diode (LD), white light with a correlated color temperature of ∼6000 K and color-rendering index of 87.7 was achieved. The nitride-NW-based device offers a robust, long-term stability for realizing yellow light emitters for tunable color-rendering index solid-state lighting, on a scalable, low-cost, foundry-compatible titanium/silicon substrate, suitable for industry uptake.

True Yellow Light-Emitting Diodes as Phosphor for Tunable Color-Rendering Index Laser-Based White Light

KAUST Repository

Janjua, Bilal

2016-10-11

An urgent challenge for the lighting research community is the lack of efficient optical devices emitting in between 500 and 600 nm, resulting in the “green-yellow gap”. In particular, true green (∼555 nm) and true yellow (∼590 nm), along with blue and red, constitute four technologically important colors. The III-nitride material system, being the most promising choice of platform to bridge this gap, still suffers from high dislocation density and poor crystal quality in realizing high-power, efficient devices. Particularly, the high polarization fields in the active region of such 2D quantum confined structures prevent efficient recombination of carriers. Here we demonstrate a true yellow nanowire (NW) light emitting diode (LED) with peak emission of 588 nm at 29.5 A/cm2 (75 mA in a 0.5 × 0.5 mm2 device) and a low turn-on voltage of ∼2.5 V, while having an internal quantum efficiency of 39%, and without “efficiency droop” up to an injection current density of 29.5 A/cm2. By mixing yellow light from a NW LED in reflective configuration with that of a red, green, and blue laser diode (LD), white light with a correlated color temperature of ∼6000 K and color-rendering index of 87.7 was achieved. The nitride-NW-based device offers a robust, long-term stability for realizing yellow light emitters for tunable color-rendering index solid-state lighting, on a scalable, low-cost, foundry-compatible titanium/silicon substrate, suitable for industry uptake.

HairMax LaserComb laser phototherapy device in the treatment of male androgenetic alopecia: A randomized, double-blind, sham device-controlled, multicentre trial.

Science.gov (United States)

Leavitt, Matt; Charles, Glenn; Heyman, Eugene; Michaels, David

2009-01-01

The use of low levels of visible or near infrared light for reducing pain, inflammation and oedema, promoting healing of wounds, deeper tissue and nerves, and preventing tissue damage has been known for almost 40 years since the invention of lasers. The HairMax LaserComb is a hand-held Class 3R lower level laser therapy device that contains a single laser module that emulates 9 beams at a wavelength of 655 nm (+/-5%). The device uses a technique of parting the user's hair by combs that are attached to the device. This improves delivery of distributed laser light to the scalp. The combs are designed so that each of the teeth on the combs aligns with a laser beam. By aligning the teeth with the laser beams, the hair can be parted and the laser energy delivered to the scalp of the user without obstruction by the individual hairs on the scalp. The primary aim of the study was to assess the safety and effectiveness of the HairMax LaserComb laser phototherapy device in the promotion of hair growth and in the cessation of hair loss in males diagnosed with androgenetic alopecia (AGA). This double-blind, sham device-controlled, multicentre, 26-week trial randomized male patients with Norwood-Hamilton classes IIa-V AGA to treatment with the HairMax LaserComb or the sham device (2 : 1). The sham device used in the study was identical to the active device except that the laser light was replaced by a non-active incandescent light source. Of the 110 patients who completed the study, subjects in the HairMax LaserComb treatment group exhibited a significantly greater increase in mean terminal hair density than subjects in the sham device group (p laser phototherapy device for the treatment of AGA in males.

Surface temperature measurements by means of pulsed photothermal effects in fusion devices

International Nuclear Information System (INIS)

Loarer, Th.; Brygo, F.; Gauthier, E.; Grisolia, C.; Le Guern, F.; Moreau, F.; Murari, A.; Roche, H.; Semerok, A.

2007-01-01

In fusion devices, the surface temperature of plasma facing components is measured using infrared cameras. This method requires a knowledge of the emissivity of the material, the reflected and parasitic fluxes (Bremsstrahlung). For carbon, the emissivity is known and constant over the detection wavelength (∼3-5 μm). For beryllium and tungsten, the reflected flux could contribute significantly to the collected flux. The pulsed photothermal method described in this paper allows temperature measurements independently of both reflected and parasitic fluxes. A local increase of the surface temperature (ΔT ∼ 10-15 K) introduced by a laser pulse (few ns) results in an additional component of the photon flux collected by the detector. Few μs after the pulse, a filtering of the signal allows to extract a temporal flux proportional only to the variation of the emitted flux, the emissivity and ΔT. The ratio of simultaneous measurements at two wavelengths leads to the elimination of ΔT and emissivity. The range of application increases for measurements at short wavelengths (1-1.7 μm) with no limitation due to the Bremsstrahlung emission

Erbium–ytterbium fibre laser emitting more than 13 W of power in ...

Indian Academy of Sciences (India)

2014-01-05

ytterbium fibre laser emitting more than 13W of ... Proceedings of the International Workshop/Conference on Computational Condensed Matter Physics and Materials Science (IWCCMP-2015). Posted on November 27, 2015.

Efficient organic light-emitting devices with platinum-complex emissive layer

KAUST Repository

Yang, Xiaohui

2011-01-18

We report efficient organic light-emitting devices having a platinum-complex emissive layer with the peak external quantum efficiency of 17.5% and power efficiency of 45 lm W−1. Variation in the device performance with platinum-complex layer thickness can be attributed to the interplay between carrier recombination and intermolecular interactions in the layer. Efficient white devices using double platinum-complex layers show the external quantum efficiency of 10%, the Commission Internationale d’Énclairage coordinates of (0.42, 0.41), and color rendering index of 84 at 1000 cd m−2.

Efficient organic light-emitting devices with platinum-complex emissive layer

KAUST Repository

Yang, Xiaohui; Wu, Fang-Iy; Haverinen, Hanna; Li, Jian; Cheng, Chien-Hong; Jabbour, Ghassan E.

2011-01-01

We report efficient organic light-emitting devices having a platinum-complex emissive layer with the peak external quantum efficiency of 17.5% and power efficiency of 45 lm W−1. Variation in the device performance with platinum-complex layer thickness can be attributed to the interplay between carrier recombination and intermolecular interactions in the layer. Efficient white devices using double platinum-complex layers show the external quantum efficiency of 10%, the Commission Internationale d’Énclairage coordinates of (0.42, 0.41), and color rendering index of 84 at 1000 cd m−2.

Investigations of thin p-GaN light-emitting diodes

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

2016-01-01

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

In Situ Preparation of Metal Halide Perovskite Nanocrystal Thin Films for Improved Light-Emitting Devices.

Science.gov (United States)

Zhao, Lianfeng; Yeh, Yao-Wen; Tran, Nhu L; Wu, Fan; Xiao, Zhengguo; Kerner, Ross A; Lin, YunHui L; Scholes, Gregory D; Yao, Nan; Rand, Barry P

2017-04-25

Hybrid organic-inorganic halide perovskite semiconductors are attractive candidates for optoelectronic applications, such as photovoltaics, light-emitting diodes, and lasers. Perovskite nanocrystals are of particular interest, where electrons and holes can be confined spatially, promoting radiative recombination. However, nanocrystalline films based on traditional colloidal nanocrystal synthesis strategies suffer from the use of long insulating ligands, low colloidal nanocrystal concentration, and significant aggregation during film formation. Here, we demonstrate a facile method for preparing perovskite nanocrystal films in situ and that the electroluminescence of light-emitting devices can be enhanced up to 40-fold through this nanocrystal film formation strategy. Briefly, the method involves the use of bulky organoammonium halides as additives to confine crystal growth of perovskites during film formation, achieving CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3 perovskite nanocrystals with an average crystal size of 5.4 ± 0.8 nm and 6.4 ± 1.3 nm, respectively, as confirmed through transmission electron microscopy measurements. Additive-confined perovskite nanocrystals show significantly improved photoluminescence quantum yield and decay lifetime. Finally, we demonstrate highly efficient CH 3 NH 3 PbI 3 red/near-infrared LEDs and CH 3 NH 3 PbBr 3 green LEDs based on this strategy, achieving an external quantum efficiency of 7.9% and 7.0%, respectively, which represent a 40-fold and 23-fold improvement over control devices fabricated without the additives.

The optimisation of the laser-induced forward transfer process for fabrication of polyfluorene-based organic light-emitting diode pixels

Science.gov (United States)

Shaw-Stewart, James; Mattle, Thomas; Lippert, Thomas; Nagel, Matthias; Nüesch, Frank; Wokaun, Alexander

2013-08-01

Laser-induced forward transfer (LIFT) has already been used to fabricate various types of organic light-emitting diodes (OLEDs), and the process itself has been optimised and refined considerably since OLED pixels were first demonstrated. In particular, a dynamic release layer (DRL) of triazene polymer has been used, the environmental pressure has been reduced down to a medium vacuum, and the donor receiver gap has been controlled with the use of spacers. Insight into the LIFT process's effect upon OLED pixel performance is presented here, obtained through optimisation of three-colour polyfluorene-based OLEDs. A marked dependence of the pixel morphology quality on the cathode metal is observed, and the laser transfer fluence dependence is also analysed. The pixel device performances are compared to conventionally fabricated devices, and cathode effects have been looked at in detail. The silver cathode pixels show more heterogeneous pixel morphologies, and a correspondingly poorer efficiency characteristics. The aluminium cathode pixels have greater green electroluminescent emission than both the silver cathode pixels and the conventionally fabricated aluminium devices, and the green emission has a fluence dependence for silver cathode pixels.

The optimisation of the laser-induced forward transfer process for fabrication of polyfluorene-based organic light-emitting diode pixels

Energy Technology Data Exchange (ETDEWEB)

Shaw-Stewart, James, E-mail: james.shaw-stewart@ed.ac.uk [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Laboratory for Functional Polymers, Empa Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Mattle, Thomas [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Lippert, Thomas, E-mail: thomas.lippert@psi.ch [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Nagel, Matthias [Laboratory for Functional Polymers, Empa Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Nüesch, Frank, E-mail: frank.nueesch@empa.ch [Laboratory for Functional Polymers, Empa Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Section de science et génie des matériaux, EPFL, CH-1015 Lausanne (Switzerland); Wokaun, Alexander [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland)

2013-08-01

Laser-induced forward transfer (LIFT) has already been used to fabricate various types of organic light-emitting diodes (OLEDs), and the process itself has been optimised and refined considerably since OLED pixels were first demonstrated. In particular, a dynamic release layer (DRL) of triazene polymer has been used, the environmental pressure has been reduced down to a medium vacuum, and the donor receiver gap has been controlled with the use of spacers. Insight into the LIFT process's effect upon OLED pixel performance is presented here, obtained through optimisation of three-colour polyfluorene-based OLEDs. A marked dependence of the pixel morphology quality on the cathode metal is observed, and the laser transfer fluence dependence is also analysed. The pixel device performances are compared to conventionally fabricated devices, and cathode effects have been looked at in detail. The silver cathode pixels show more heterogeneous pixel morphologies, and a correspondingly poorer efficiency characteristics. The aluminium cathode pixels have greater green electroluminescent emission than both the silver cathode pixels and the conventionally fabricated aluminium devices, and the green emission has a fluence dependence for silver cathode pixels.

Laser- and UV-assisted modification of polystyrene surfaces for control of protein adsorption and cell adhesion

International Nuclear Information System (INIS)

Pfleging, Wilhelm; Torge, Maika; Bruns, Michael; Trouillet, Vanessa; Welle, Alexander; Wilson, Sandra

2009-01-01

An appropriate choice of laser and process parameters enables new approaches for the fabrication of polymeric lab-on-chip devices with integrated functionalities. We will present our current research results in laser-assisted modification of polystyrene (PS) with respect to the fabrication of polymer devices for cell culture applications. For this purpose laser micro-patterning of PS and subsequent surface functionalization was investigated as function of laser and process parameters. A high power ArF-excimer laser radiation source with a pulse length of 19 ns as well as a high repetition ArF-excimer laser source with a pulse length of 5 ns were used in order to study the influence of laser pulse length on laser-induced surface oxidation. The change in surface chemistry was characterized by X-ray photoelectron spectroscopy and contact angle measurements. The difference between laser-assisted modification versus UV-lamp assisted modification was investigated. A photolytic activation of specific areas of the polymer surface and subsequent oxidization in oxygen or ambient air leads to a chemically modified polymer surface bearing carboxylic acid groups well-suited for controlled competitive protein adsorption or protein immobilization. Finally, distinct areas for cell growth and adhesion are obtained

Selective metallization of polymers using laser induced surface activation (LISA)—characterization and optimization of porous surface topography

DEFF Research Database (Denmark)

Zhang, Yang; Hansen, Hans Nørgaard; De Grave, Arnaud

2011-01-01

Laser induced selective activation (LISA) is a molded interconnected devices technique for selective metallization of polymers. On the working piece, only the laser-machined area can be metalized in the subsequent plating. The principle of the technology is introduced. Surface analysis was perfor...

Efficient fluorescent deep-blue and hybrid white emitting devices based on carbazole/benzimidazole compound

KAUST Repository

Yang, Xiaohui

2011-07-28

We report the synthesis, photophysics, and electrochemical characterization of carbazole/benzimidazole-based compound (Cz-2pbb) and efficient fluorescent deep-blue light emitting devices based on Cz-2pbb with the peak external quantum efficiency of 4.1% and Commission Internationale dÉnclairage coordinates of (0.16, 0.05). Efficient deep-blue emission as well as high triplet state energy of Cz-2pbb enables fabrication of hybrid white organic light emitting diodes with a single emissive layer. Hybrid white emitting devices based on Cz-2pbb show the peak external quantum efficiency exceeding 10% and power efficiency of 14.8 lm/W at a luminance of 500 cd/m2. © 2011 American Chemical Society.

Radiation effects in optoelectronic devices

International Nuclear Information System (INIS)

Barnes, C.E.

1977-03-01

A summary is given of studies on radiation effects in light-emitting diodes, laser diodes, detectors, optical isolators and optical fibers. It is shown that the study of radiation damage in these devices can provide valuable information concerning the nature of the devices themselves, as well as methods of hardening these devices for applications in radiation environments

Improved outcoupling of light in organic light emitting devices, utilizing a holographic DFB-structure

Energy Technology Data Exchange (ETDEWEB)

Reinke, Nils [Organische Funktionsmaterialien, University of Duisburg-Essen (Germany)]. E-mail: nils.reinke@physik.uni-augsburg.de; Fuhrmann, Thomas [Macromolecular Chemistry and Molecular Materials, University of Kassel (Germany); Perschke, Alexandra [Organische Funktionsmaterialien, University of Duisburg-Essen (Germany); Franke, Hilmar [Organische Funktionsmaterialien, University of Duisburg-Essen (Germany)

2004-12-10

In this work organic light emitting devices (OLEDs) were fabricated implementing gratings, in order to extract waveguided electroluminescence (EL). The gratings were recorded by exposing thin films of the molecular azo glass N, N'-bis (4-phenyl)-N, N'-bis [(4-phenylazo)-phenyl] benzidine (AZOPD) to holographic light patterns. The photopatterned AZOPD serves as hole transport material for devices with aluminum-tris(8-hydroxyquinoline) doped with 1% of 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (Alq{sub 3}:DCM) as emissive/electron transport layer. The corrugated devices showed enhanced emission in the forward direction. The emitted light is polarized preferably parallel to the grating lines. In addition, we have found a doubling in the total luminance with respect to the unstructured device.

High-speed high-efficiency 500-W cw CO2 laser hermetization of metal frames of microelectronics devices

Science.gov (United States)

Levin, Andrey V.

1996-04-01

High-speed, efficient method of laser surface treatment has been developed using (500 W) cw CO2 laser. The principal advantages of CO2 laser surface treatment in comparison with solid state lasers are the basis of the method. It has been affirmed that high efficiency of welding was a consequence of the fundamental properties of metal-IR-radiation (10,6 mkm) interaction. CO2 laser hermetization of metal frames of microelectronic devices is described as an example of the proposed method application.

Proton Irradiation Effects in Oxide-Confined Vertical Cavity Surface Emitting Laser (VCSEL) Diodes

International Nuclear Information System (INIS)

Armendariz, M.G.; Barnes, C.E.; Choquette, K.D.; Guertin, S.; Hash, G.L.; Schwank, J.R.; Swift, G.M.

1999-01-01

Recent space experience has shown that the use of commercial optocouplers can be problematic in spacecraft, such as TOPEX/Poseidon, that must operate in significant radiation environments. Radiation--induced failures of these devices have been observed in space and have been further documented at similar radiation doses in the laboratory. The ubiquitous use of optocouplers in spacecraft systems for a variety of applications, such as electrical isolation, switching and power transfer, is indicative of the need for optocouplers that can withstand the space radiation environment. In addition, the distributed nature of their use implies that it is not particularly desirable to shield optocouplers for use in radiation environments. Thus, it will be important for the space community to have access to radiation hardened/tolerant optocouplers. For many microelectronic and photonic devices, it is difficult to achieve radiation hardness without sacrificing performance. However, in the case of optocouplers, one should be able to achieve both superior radiation hardness and performance for such characteristics as switching speed, current transfer ratio (CTR), minimum power usage and array power transfer, if standard light emitting diodes (LEDs), such as those in the commercial optocouplers mentioned above, are avoided, and VCSELs are employed as the emitter portion of the optocoupler. The physical configuration of VCSELs allows one to achieve parallel use of an array of devices and construct a multichannel optocoupler in the standard fashion with the emitters and detectors looking at each other. In addition, detectors similar in structure to the VCSELs can be fabricated which allows bidirectional functionality of the optocoupler. Recent discussions suggest that VCSELs will enjoy widespread applications in the telecommunications and data transfer fields

Surface modification of Ti dental implants by Nd:YVO4 laser irradiation

International Nuclear Information System (INIS)

Braga, Francisco J.C.; Marques, Rodrigo F.C.; Filho, Edson de A.; Guastaldi, Antonio C.

2007-01-01

Surface modifications have been applied in endosteal bone devices in order to improve the osseointegration through direct contact between neoformed bone and the implant without an intervening soft tissue layer. Surface characteristics of titanium implants have been modified by addictive methods, such as metallic titanium, titanium oxide and hydroxyapatite powder plasma spray, as well as by subtractive methods, such as acid etching, acid etching associated with sandblasting by either AlO 2 or TiO 2 , and recently by laser ablation. Surface modification for dental and medical implants can be obtained by using laser irradiation technique where its parameters like repetition rate, pulse energy, scanning speed and fluency must be taken into accounting to the appropriate surface topography. Surfaces of commercially pure Ti (cpTi) were modified by laser Nd:YVO 4 in nine different parameters configurations, all under normal atmosphere. The samples were characterized by SEM and XRD refined by Rietveld method. The crystalline phases αTi, βTi, Ti 6 O, Ti 3 O and TiO were formed by the melting and fast cooling processes during irradiation. The resulting phases on the irradiated surface were correlated with the laser beam parameters. The aim of the present work was to control titanium oxides formations in order to improve implants osseointegration by using a laser irradiation technique which is of great importance to biomaterial devices due to being a clean and reproducible process

Nanowire Lasers

Directory of Open Access Journals (Sweden)

Couteau C.

2015-05-01

Full Text Available We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs, solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

Efficient and stable laser-driven white lighting

Directory of Open Access Journals (Sweden)

Kristin A. Denault

2013-07-01

Full Text Available Laser-based white lighting offers a viable option as an efficient and color-stable high-power solid-state white light source. We show that white light generation is possible using blue or near-UV laser diodes in combination with yellow-emitting cerium-substituted yttrium aluminum garnet (YAG:Ce or a mixture of red-, green-, and blue-emitting phosphors. A variety of correlated color temperatures (CCT are achieved, ranging from cool white light with a CCT of 4400 K using a blue laser diode to a warm white light with a CCT of 2700 K using a near-UV laser diode, with respective color rendering indices of 57 and 95. The luminous flux of these devices are measured to be 252 lm and 53 lm with luminous efficacies of 76 lm/W and 19 lm/W, respectively. An estimation of the maximum efficacy of a device comprising a blue laser diode in combination with YAG:Ce is calculated and the results are used to optimize the device.

Full color organic light-emitting devices with microcavity structure and color filter.

Science.gov (United States)

Zhang, Weiwei; Liu, Hongyu; Sun, Runguang

2009-05-11

This letter demonstrated the fabrication of the full color passive matrix organic light-emitting devices based on the combination of the microcavity structure, color filter and a common white polymeric OLED. In the microcavity structure, patterned ITO terraces with different thickness were used as the anode as well as cavity spacer. The primary color emitting peaks were originally generated by the microcavity and then the second resonance peak was absorbed by the color filter.

Formation of various types of nanostructures on germanium surface by nanosecond laser pulses

Science.gov (United States)

Mikolutskiy, S. I.; Khasaya, R. R.; Khomich, Yu V.; Yamshchikov, V. A.

2018-03-01

The paper describes the formation of micro- and nanostructures in different parts of irradiation zone on germanium surface by multiple action of nanosecond pulses of ArF-laser. It proposes a simple method using only one laser beam without any optional devices and masks for surface treatment. Hexa- and pentagonal cells with submicron dimensions along the surface were observed in peripheral zone of irradiation spot by atomic-force microscopy. Nanostructures in the form of bulbs with rounded peaks with lateral sizes of 40-120 nm were obtained in peripheral low-intensity region of the laser spot. Considering experimental data on material processing by nanosecond laser pulses, a classification of five main types of surface reliefs formed by nanosecond laser pulses with energy density near or slightly above ablation threshold was proposed.

Electromagnetic radiation emitted by a plasma produced in air by laser pulses with lambda = 10.6 μm

International Nuclear Information System (INIS)

Danilychev, V.A.; Zvorykin, V.D.; Kholin, I.V.; Chugunov, A.Y.

1981-01-01

The spectrum, brightness, and energy have been measured for the electromagnetic radiation emitted by a plasma produced in air near a solid surface by pulses from a high-power CO 2 laser. The air pressure was varied over the range p 0 = 0.1--760 torr, and the laser power density was varied over the range q = 5 x 10 6 --10 8 W/cm 2 . At p 0 > or approx. =2--5 torr the radiation properties of the plasma are determined by a laser-beam absorption wave which arises in the gas. The maximum brightness temperature, T/sub b/approx. =50 000 K (lambda = 400 +- 20 nm), is reached at p 0 = 25 torr. The emission spectrum is quite different from an equilibrium spectrum, consisting primarily of NII, OII, and NIII lines. The total energy radiation by the plasma in the wavelength interval 360--2600 nm into a solid angle of 4π sr reaches 2.3% of the laser pulse energy

Ultrashort laser pulses and electromagnetic pulse generation in air and on dielectric surfaces

International Nuclear Information System (INIS)

Sprangle, P.; Penano, J.R.; Hafizi, B.; Kapetanakos, C.A.

2004-01-01

Intense, ultrashort laser pulses propagating in the atmosphere have been observed to emit sub-THz electromagnetic pulses (EMPS). The purpose of this paper is to analyze EMP generation from the interaction of ultrashort laser pulses with air and with dielectric surfaces and to determine the efficiency of conversion of laser energy to EMP energy. In our self-consistent model the laser pulse partially ionizes the medium, forms a plasma filament, and through the ponderomotive forces associated with the laser pulse, drives plasma currents which are the source of the EMP. The propagating laser pulse evolves under the influence of diffraction, Kerr focusing, plasma defocusing, and energy depletion due to electron collisions and ionization. Collective effects and recombination processes are also included in the model. The duration of the EMP in air, at a fixed point, is found to be a few hundred femtoseconds, i.e., on the order of the laser pulse duration plus the electron collision time. For steady state laser pulse propagation the flux of EMP energy is nonradiative and axially directed. Radiative EMP energy is present only for nonsteady state or transient laser pulse propagation. The analysis also considers the generation of EMP on the surface of a dielectric on which an ultrashort laser pulse is incident. For typical laser parameters, the power and energy conversion efficiency from laser radiation to EMP radiation in both air and from dielectric surfaces is found to be extremely small, -8 . Results of full-scale, self-consistent, numerical simulations of atmospheric and dielectric surface EMP generation are presented. A recent experiment on atmospheric EMP generation is also simulated

Thermal properties of high-power diode lasers investigated by means of high resolution thermography

International Nuclear Information System (INIS)

Kozłowska, Anna; Maląg, Andrzej; Dąbrowska, Elżbieta; Teodorczyk, Marian

2012-01-01

In the present work, thermal effects in high-power diode lasers are investigated by means of high resolution thermography. Thermal properties of the devices emitting in the 650 nm and 808 nm wavelength ranges are compared. The different versions of the heterostructure design are analyzed. The results show a lowering of active region temperature for diode lasers with asymmetric heterostructure scheme with reduced quantum well distance from the heterostructure surface (and the heat sink). Optimization of technological processes allowed for the improvement of the device performance, e.g. reduction of solder non-uniformities and local defect sites at the mirrors which was visualized by the thermography.

Semiconductor-based, large-area, flexible, electronic devices

Science.gov (United States)

Goyal, Amit [Knoxville, TN

2011-03-15

Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Efficient white organic light emitting devices with dual emitting layers

International Nuclear Information System (INIS)

Wu Yaoshan; Hwang Shiaowen; Chen Hsianhung; Lee Mengting; Shen Wenjian; Chen, C.H.

2005-01-01

In this paper, a new white organic light-emitting device (OLED) with the structure of indium tin oxide / CF x / 1,4-bis[N-(1-naphthyl)-N'-phenylamino]-biphenyl (NPB) (30 nm)/NPB: 2,8-di(t-butyl)-5,11-di[4-(t-butyl)phenyl]-6,12-diphenylnaphthacene (20 nm; 1.6 %) / 2-methyl-9,10-di(2-naphthyl) anthracene: p-bis(p-N,N-di-phenyl-aminostyryl)benzene (40 nm, 3%) / aluminum tris(8-hydroxyquinoline) (20 nm) / LiF (1 nm) / Al (200 nm) has been investigated. The device showed white emission with a high-luminous yield of 9.75 cd/A at 20 mA/cm 2 , but its Commission Internationale de l'Eclairage chromaticity coordinates appeared to change from (0.34, 0.42) at 6 mA/cm2 to (0.27, 0.37) at 200 mA/cm 2 due to the shift of recombination zone. The change of color with drive current was suppressed by introduction of an electron-blocking layer of NPB along with a hole-blocking layer of aluminum (III) bis(2-methyl-8-quinolinato)4-phenylphenolato to the white OLED which successfully confined the recombination site and achieved a luminous yield of 9.9 cd/A at 20 mA/cm 2

Microfabrication in free-standing gallium nitride using UV laser micromachining

International Nuclear Information System (INIS)

Gu, E.; Howard, H.; Conneely, A.; O'Connor, G.M.; Illy, E.K.; Knowles, M.R.H.; Edwards, P.R.; Martin, R.W.; Watson, I.M.; Dawson, M.D.

2006-01-01

Gallium nitride (GaN) and related alloys are important semiconductor materials for fabricating novel photonic devices such as ultraviolet (UV) light-emitting diodes (LEDs) and vertical cavity surface-emitting lasers (VCSELs). Recent technical advances have made free-standing GaN substrates available and affordable. However, these materials are strongly resistant to wet chemical etching and also, low etch rates restrict the use of dry etching. Thus, to develop alternative high-resolution processing for these materials is increasingly important. In this paper, we report the fabrication of microstructures in free-standing GaN using pulsed UV lasers. An effective method was first developed to remove the re-deposited materials due to the laser machining. In order to achieve controllable machining and high resolution in GaN, machining parameters were carefully optimised. Under the optimised conditions, precision features such as holes (through holes, blind or tapered holes) on a tens of micrometer length scale have been machined. To fabricate micro-trenches in GaN with vertical sidewalls and a flat bottom, different process strategies of laser machining were tested and optimised. Using this technique, we have successfully fabricated high-quality micro-trenches in free-standing GaN with various widths and depths. The approach combining UV laser micromachining and other processes is also discussed. Our results demonstrate that the pulsed UV laser is a powerful tool for fabricating precision microstructures and devices in gallium nitride

Design and Fabrication of 850 and 980 nm Vertical Cavity Surface Emitting Laser

National Research Council Canada - National Science Library

Das, N

2004-01-01

.... VCSELs on GaAs substrates were grown by the molecular beam epitaxy technique. In this report we present detailed procedures to design and fabricate 850-nm top-emitting and 980-nm bottom-emitting VCSELs...

Highly efficient phosphorescent blue and white organic light-emitting devices with simplified architectures

Energy Technology Data Exchange (ETDEWEB)

Chang, Chih-Hao, E-mail: chc@saturn.yzu.edu.tw [Department of Photonics Engineering, Yuan Ze University, Chung-Li, Taiwan 32003 (China); Ding, Yong-Shung; Hsieh, Po-Wei; Chang, Chien-Ping; Lin, Wei-Chieh [Department of Photonics Engineering, Yuan Ze University, Chung-Li, Taiwan 32003 (China); Chang, Hsin-Hua, E-mail: hhua3@mail.vnu.edu.tw [Department of Electro-Optical Engineering, Vanung University, Chung-Li, Taiwan 32061 (China)

2011-09-01

Blue phosphorescent organic light-emitting devices (PhOLEDs) with quantum efficiency close to the theoretical maximum were achieved by utilizing a double-layer architecture. Two wide-triplet-gap materials, 1,3-bis(9-carbazolyl)benzene and 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene, were employed in the emitting and electron-transport layers respectively. The opposite carrier-transport characteristics of these two materials were leveraged to define the exciton formation zone and thus increase the probability of recombination. The efficiency at practical luminance (100 cd/m{sup 2}) was as high as 20.8%, 47.7 cd/A and 31.2 lm/W, respectively. Furthermore, based on the design concept of this simplified architecture, efficient warmish-white PhOLEDs were developed. Such two-component white organic light-emitting devices exhibited rather stable colors over a wide brightness range and yielded electroluminescence efficiencies of 15.3%, 33.3 cd/A, and 22.7 lm/W in the forward directions.

Highly efficient phosphorescent blue and white organic light-emitting devices with simplified architectures

International Nuclear Information System (INIS)

Chang, Chih-Hao; Ding, Yong-Shung; Hsieh, Po-Wei; Chang, Chien-Ping; Lin, Wei-Chieh; Chang, Hsin-Hua

2011-01-01

Blue phosphorescent organic light-emitting devices (PhOLEDs) with quantum efficiency close to the theoretical maximum were achieved by utilizing a double-layer architecture. Two wide-triplet-gap materials, 1,3-bis(9-carbazolyl)benzene and 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene, were employed in the emitting and electron-transport layers respectively. The opposite carrier-transport characteristics of these two materials were leveraged to define the exciton formation zone and thus increase the probability of recombination. The efficiency at practical luminance (100 cd/m 2 ) was as high as 20.8%, 47.7 cd/A and 31.2 lm/W, respectively. Furthermore, based on the design concept of this simplified architecture, efficient warmish-white PhOLEDs were developed. Such two-component white organic light-emitting devices exhibited rather stable colors over a wide brightness range and yielded electroluminescence efficiencies of 15.3%, 33.3 cd/A, and 22.7 lm/W in the forward directions.

Laser direct writing of micro- and nano-scale medical devices

Science.gov (United States)

Gittard, Shaun D; Narayan, Roger J

2010-01-01

Laser-based direct writing of materials has undergone significant development in recent years. The ability to modify a variety of materials at small length scales and using short production times provides laser direct writing with unique capabilities for fabrication of medical devices. In many laser-based rapid prototyping methods, microscale and submicroscale structuring of materials is controlled by computer-generated models. Various laser-based direct write methods, including selective laser sintering/melting, laser machining, matrix-assisted pulsed-laser evaporation direct write, stereolithography and two-photon polymerization, are described. Their use in fabrication of microstructured and nanostructured medical devices is discussed. Laser direct writing may be used for processing a wide variety of advanced medical devices, including patient-specific prostheses, drug delivery devices, biosensors, stents and tissue-engineering scaffolds. PMID:20420557

White light emission from organic-inorganic hererostructure devices by using CdSe quantum dots as emitting layer

International Nuclear Information System (INIS)

Tang Aiwei; Teng Feng; Gao Yinhao; Li Dan; Zhao Suling; Liang Chunjun; Wang Yongsheng

2007-01-01

In this paper, white light emission was obtained from organic-inorganic heterostructure devices by using CdSe quantum dots as emitting layer, in which CdSe quantum dots were synthesized via a colloidal chemical approach by using CdO and Se powder as precursors. Photoluminescence of CdSe quantum dots demonstrated a white emission with a full wavelength at half maximum (FWHM) of about 200 nm under ambient conditions, and the white emission could be observed in both multilayer device ITO/PEDOT:PSS/CdSe/BCP/Alq 3 /Al and single-layer device: ITO/PEDOT:PSS/CdSe/Al. The broad emission was attributed to the inhomogeneous broadening. The CIE coordinates of the multilayer device were x=0.35 and y=0.40. The white-light-emitting diodes with CdSe quantum dots as the emitting layer are potentially useful in lighting applications

Highly efficient white organic light-emitting devices consisting of undoped ultrathin yellow phosphorescent layer

Energy Technology Data Exchange (ETDEWEB)

Liu, Shengqiang [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Ma, Zhu; Zhao, Juan [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

2013-02-15

High-efficiency white organic light-emitting devices (WOLEDs) based on an undoped ultrathin yellow light-emitting layer and a doped blue light-emitting layer were demonstrated. While the thickness of blue light-emitting layer, formed by doping a charge-trapping phosphor, iridium(III) bis(4 Prime ,6 Prime -difluorophenylpyridinato)tetrakis(1-pyrazolyl)borate (FIr6) in a wide bandgap host, was kept constant, the thickness of neat yellow emissive layer of novel phosphorescent material, bis[2-(4-tertbutylphenyl)benzothiazolato-N,C{sup 2 Prime }]iridium (acetylacetonate) [(t-bt){sub 2}Ir(acac)] was varied to optimize the device performance. The optimized device exhibited maximum luminance, current efficiency and power efficiency of 24,000 cd/m{sup 2} (at 15.2 V), 79.0 cd/A (at 1550 cd/m{sup 2}) and 40.5 lm/W (at 1000 cd/m{sup 2}), respectively. Besides, the white-light emission covered a wide range of visible spectrum, and the Commission Internationale de l'Eclairage coordinates were (0.32, 0.38) with a color temperature of 5800 K at 8 V. Moreover, high external quantum efficiency was also obtained in the high-efficiency WOLEDs. The performance enhancement was attributed to the proper thickness of (t-bt){sub 2}Ir(acac) layer that enabled adequate current density and enough phosphorescent dye to trap electrons. - Highlights: Black-Right-Pointing-Pointer Highly efficient WOLEDs based on two complementary layers were fabricated. Black-Right-Pointing-Pointer The yellow emissive layer was formed by utilizing undoping system. Black-Right-Pointing-Pointer The blue emissive layer was made by host-guest doping system. Black-Right-Pointing-Pointer The thickness of the yellow emissive layer was varied to make device optimization. Black-Right-Pointing-Pointer The optimized device achieved high power efficiency of 40.5 lm/W.

Compact blue laser devices based on nonlinear frequency upconversion

International Nuclear Information System (INIS)

Risk, W.P.

1989-01-01

This paper reports how miniature sources of coherent blue radiation can be produced by using nonlinear optical materials for frequency upconversion of the infrared radiation emitted by laser diodes. Direct upconversion of laser diode radiation is possible, but there are several advantages to using the diode laser to pump a solid-state laser which is then upconverted. In either case, the challenge is to find combinations of nonlinear materials and laser for efficient frequency upconversion. Several examples have been demonstrated. These include intracavity frequency doubling of a diode-pumped 946-nm Nd:YAG laser, intracavity frequency mixing of a 809-nm GaAlAs laser diode with a diode- pumped 1064-nm Nd:YAG laser, and direct frequency doubling of a 994-nm strained-layer InGaAs laser diode

Mechanism of equivalent electric dipole oscillation for high-order harmonic generation from grating-structured solid-surface by femtosecond laser pulse

Science.gov (United States)

Wang, Yang; Song, Hai-Ying; Liu, H. Y.; Liu, Shi-Bing

2017-07-01

We theoretically study high-order harmonic generation (HHG) from relativistically driven overdense plasma targets with rectangularly grating-structured surfaces by femtosecond laser pulses. Our particle-in-cell (PIC) simulations show that, under the conditions of low laser intensity and plasma density, the harmonics emit principally along small angles deviating from the target surface. Further investigation of the surface electron dynamics reveals that the electron bunches are formed by the interaction between the laser field and the target surface, giving rise to the oscillation of equivalent electric-dipole (OEED), which enhances specific harmonic orders. Our work helps understand the mechanism of harmonic emissions from grating targets and the distinction from the planar harmonic scheme.

Reinventing a p-type doping process for stable ZnO light emitting devices

Science.gov (United States)

Xie, Xiuhua; Li, Binghui; Zhang, Zhenzhong; Shen, Dezhen

2018-06-01

A tough challenge for zinc oxide (ZnO) as the ultraviolet optoelectronics materials is realizing the stable and reliable p-type conductivity. Self-compensation, coming from native donor-type point defects, is a big obstacle. In this work, we introduce a dynamic N doping process with molecular beam epitaxy, which is accomplished by a Zn, N-shutter periodic switch (a certain time shift between them for independent optimization of surface conditions). During the epitaxy, N adatoms are incorporated under the condition of (2  ×  2)  +  Zn vacancies reconstruction on a Zn-polar surface, at which oxygen vacancies (V O), the dominating compensating donors, are suppressed. With the p-ZnO with sufficient holes surviving, N concentration ~1  ×  1019 cm‑3, is employed in a p-i-n light emitting devices. Significant ultraviolet emission of electroluminescence spectra without broad green band (related to V O) at room-temperature are demonstrated. The devices work incessantly without intentional cooling for over 300 h at a luminous intensity reduction of one order of magnitude under the driving of a 10 mA continuous current, which are the demonstration for p-ZnO stability and reliability.

Ultrabroad linewidth orange-emitting nanowires LED for high CRI laser-based white lighting and gigahertz communications

KAUST Repository

Janjua, Bilal

2016-08-10

Group-III-nitride laser diode (LD)-based solid-state lighting device has been demonstrated to be droop-free compared to light-emitting diodes (LEDs), and highly energy-efficient compared to that of the traditional incandescent and fluorescent white light systems. The YAG:Ce3+ phosphor used in LD-based solid-state lighting, however, is associated with rapid degradation issue. An alternate phosphor/LD architecture, which is capable of sustaining high temperature, high power density, while still intensity- and bandwidth-tunable for high color-quality remained unexplored. In this paper, we present for the first time, the proof-of-concept of the generation of high-quality white light using an InGaN-based orange nanowires (NWs) LED grown on silicon, in conjunction with a blue LD, and in place of the compound-phosphor. By changing the relative intensities of the ultrabroad linewidth orange and narrow-linewidth blue components, our LED/LD device architecture achieved correlated color temperature (CCT) ranging from 3000 K to above 6000K with color rendering index (CRI) values reaching 83.1, a value unsurpassed by the YAG-phosphor/blue-LD counterpart. The white-light wireless communications was implemented using the blue LD through on-off keying (OOK) modulation to obtain a data rate of 1.06 Gbps. We therefore achieved the best of both worlds when orange-emitting NWs LED are utilized as “active-phosphor”, while blue LD is used for both color mixing and optical wireless communications.

Spent fuel container alignment device and method

Science.gov (United States)

Jones, Stewart D.; Chapek, George V.

1996-01-01

An alignment device is used with a spent fuel shipping container including a plurality of fuel pockets for spent fuel arranged in an annular array and having a rotatable cover including an access opening therein. The alignment device includes a lightweight plate which is installed over the access opening of the cover. A laser device is mounted on the plate so as to emit a laser beam through a laser admittance window in the cover into the container in the direction of a pre-established target associated with a particular fuel pocket. An indexing arrangement on the container provides an indication of the angular position of the rotatable cover when the laser beam produced by the laser is brought into alignment with the target of the associated fuel pocket.

Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

Science.gov (United States)

Rousseau, Ian; Callsen, Gordon; Jacopin, Gwénolé; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas

2018-03-01

III-nitride surface states are expected to impact high surface-to-volume ratio devices, such as nano- and micro-wire light-emitting diodes, transistors, and photonic integrated circuits. In this work, reversible photoinduced oxygen desorption from III-nitride microdisk resonator surfaces is shown to increase optical attenuation of whispering gallery modes by 100 cm-1 at λ = 450 nm. Comparison of photoinduced oxygen desorption in unintentionally and n+-doped microdisks suggests that the spectral changes originate from the unpinning of the surface Fermi level, likely taking place at etched nonpolar III-nitride sidewalls. An oxygen-rich surface prepared by thermal annealing results in a broadband Q improvement to state-of-the-art values exceeding 1 × 104 at 2.6 eV. Such findings emphasize the importance of optically active surface states and their passivation for future nanoscale III-nitride optoelectronic and photonic devices.

Efficient white organic light emitting devices with dual emitting layers

Energy Technology Data Exchange (ETDEWEB)

Wu Yaoshan [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Hwang Shiaowen [Display Institute, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China)]. E-mail: jesse@faculty.nctu.edu.tw; Chen Hsianhung [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Lee Mengting [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Shen Wenjian [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Chen, C.H. [Display Institute, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China)

2005-09-22

In this paper, a new white organic light-emitting device (OLED) with the structure of indium tin oxide / CF {sub x} / 1,4-bis[N-(1-naphthyl)-N'-phenylamino]-biphenyl (NPB) (30 nm)/NPB: 2,8-di(t-butyl)-5,11-di[4-(t-butyl)phenyl]-6,12-diphenylnaphthacene (20 nm; 1.6 %) / 2-methyl-9,10-di(2-naphthyl) anthracene: p-bis(p-N,N-di-phenyl-aminostyryl)benzene (40 nm, 3%) / aluminum tris(8-hydroxyquinoline) (20 nm) / LiF (1 nm) / Al (200 nm) has been investigated. The device showed white emission with a high-luminous yield of 9.75 cd/A at 20 mA/cm{sup 2}, but its Commission Internationale de l'Eclairage chromaticity coordinates appeared to change from (0.34, 0.42) at 6 mA/cm2 to (0.27, 0.37) at 200 mA/cm{sup 2} due to the shift of recombination zone. The change of color with drive current was suppressed by introduction of an electron-blocking layer of NPB along with a hole-blocking layer of aluminum (III) bis(2-methyl-8-quinolinato)4-phenylphenolato to the white OLED which successfully confined the recombination site and achieved a luminous yield of 9.9 cd/A at 20 mA/cm{sup 2}.

[Performance dependence of organic light-emitting devices on the thickness of Alq3 emitting layer].

Science.gov (United States)

Lian, Jia-rong; Liao, Qiao-sheng; Yang, Rui-bo; Zheng, Wei; Zeng, Peng-ju

2010-10-01

The dependence of opto-electronical characteristics in organic light-emitting devices on the thickness of Alq3 emitter layer was studied, where MoO3, NPB, and Alq3 were used as hole injector, hole transporter, and emitter/electron transporter, respectively. By increasing the thickness of Alq3 layer from 20 to 100 nm, the device current decreased gradually, and the EL spectra of devices performed a little red shift with an obvious broadening in long wavelength range but a little decrease in intensity of short wavelength range. The authors simulated the EL spectra using the photoluminescence (PL) spectra of Alq3 as Alq3 intrinsic emission, which coincided with the experimental EL spectra well. The simulated results suggested that the effect of interference takes the major role in broadening the long wavelength range of EL spectra, and the distribution of emission zone largely affects the profile of EL spectra in short wavelength range.

Surface plasmon resonance assisted rapid laser joining of glass

Energy Technology Data Exchange (ETDEWEB)

Zolotovskaya, Svetlana A.; Tang, Guang; Abdolvand, Amin, E-mail: a.abdolvand@dundee.ac.uk [School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN (United Kingdom); Wang, Zengbo [School of Electronic Engineering, Bangor University, Bangor LL57 1UT (United Kingdom)

2014-08-25

Rapid and strong joining of clear glass to glass containing randomly distributed embedded spherical silver nanoparticles upon nanosecond pulsed laser irradiation (∼40 ns and repetition rate of 100 kHz) at 532 nm is demonstrated. The embedded silver nanoparticles were ∼30–40 nm in diameter, contained in a thin surface layer of ∼10 μm. A joint strength of 12.5 MPa was achieved for a laser fluence of only ∼0.13 J/cm{sup 2} and scanning speed of 10 mm/s. The bonding mechanism is discussed in terms of absorption of the laser energy by nanoparticles and the transfer of the accumulated localised heat to the surrounding glass leading to the local melting and formation of a strong bond. The presented technique is scalable and overcomes a number of serious challenges for a widespread adoption of laser-assisted rapid joining of glass substrates, enabling applications in the manufacture of microelectronic devices, sensors, micro-fluidic, and medical devices.

All-inorganic white light emitting devices based on ZnO nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Nannen, Ekaterina

2012-09-21

Semiconductor nanaocrystals (NCs) are very promising candidates for lightweight large-area rollable displays and light emitting devices (LEDs). They are expected to combine the efficiency, robustness and color tunability of conventional semiconductor LEDs with the flexible fabrication techniques known from OLED technology, since the NCs are compatible with solution processing and therefore can be deposited on virtually any substrates including glass and plastic. Today, NC-LEDs consist of chemically synthesized QDs embedded in organic charge injection and transport layers. The organic layers limit the robustness of the NC-LEDs and result in significant constrictions within the device fabrication procedure, such as organic evaporation steps, inert (i.e. humidity and oxygen free) atmosphere and obligatory encapsulation. These limitations during the production process as well as complex chemical synthesis route of the implemented NCs and organic components lead to high fabrication costs and low turnover. So far, only prototype devices have been introduced by several research groups and industrial companies. Still, the main concern retarding NC-LEDs from market launch is the high content of toxic heavy metals like Cd in the active nanocrystalline light emitting material. Within this work, possible environmentally safe and ambient-air-compatible alternatives to conventional QDs and organics were explored, with the main focus on design and fabrication of completely inorganic white NC-LEDs with commercial ZnO nanoparticles as an active light emitting material. While the electrical transport properties through the NC-network of the commercially available VP AdNano {sup registered} ZnO2O particles were already to some extent explored, their optical properties and therefore suitability as an active light emitter in NC-LEDs were not studied so far. (orig.)

High-energy coherent terahertz radiation emitted by wide-angle electron beams from a laser-wakefield accelerator

Science.gov (United States)

Yang, Xue; Brunetti, Enrico; Jaroszynski, Dino A.

2018-04-01

High-charge electron beams produced by laser-wakefield accelerators are potentially novel, scalable sources of high-power terahertz radiation suitable for applications requiring high-intensity fields. When an intense laser pulse propagates in underdense plasma, it can generate femtosecond duration, self-injected picocoulomb electron bunches that accelerate on-axis to energies from 10s of MeV to several GeV, depending on laser intensity and plasma density. The process leading to the formation of the accelerating structure also generates non-injected, sub-picosecond duration, 1–2 MeV nanocoulomb electron beams emitted obliquely into a hollow cone around the laser propagation axis. These wide-angle beams are stable and depend weakly on laser and plasma parameters. Here we perform simulations to characterise the coherent transition radiation emitted by these beams if passed through a thin metal foil, or directly at the plasma–vacuum interface, showing that coherent terahertz radiation with 10s μJ to mJ-level energy can be produced with an optical to terahertz conversion efficiency up to 10‑4–10‑3.

Characterization of thermoelectric devices by laser induced Seebeck electromotive force (LIS-EMF) measurement

Energy Technology Data Exchange (ETDEWEB)

Lopez, Luis-David Patino [Universite de Bordeaux 1, Centre de Physique Moleculaire Optique et Hertzienne, 351, cours de la liberation, 33405 Talence (France); Dilhaire, Stefan [Universite de Bordeaux 1, Centre de Physique Moleculaire Optique et Hertzienne, 351, cours de la liberation, 33405 Talence (France); Grauby, Stephane [Universite de Bordeaux 1, Centre de Physique Moleculaire Optique et Hertzienne, 351, cours de la liberation, 33405 Talence (France); Salhi, M Amine [Universite de Bordeaux 1, Centre de Physique Moleculaire Optique et Hertzienne, 351, cours de la liberation, 33405 Talence (France); Ezzahri, Younes [Universite de Bordeaux 1, Centre de Physique Moleculaire Optique et Hertzienne, 351, cours de la liberation, 33405 Talence (France); Claeys, Wilfrid [Universite de Bordeaux 1, Centre de Physique Moleculaire Optique et Hertzienne, 351, cours de la liberation, 33405 Talence (France); Batsale, Jean-Christophe [Laboratoire TREFLE, Esplanade des Arts et Metiers, 33405 Talence Cedex (France)

2005-05-21

An in-depth study related to a new method of characterizing properties in thermoelectrics is proposed in this paper. This technique is appropriate for single or multi-layered thermoelectric devices. A modulated laser beam is used as a heater in order to generate a Seebeck electromotive force (EMF). The laser beam, line shaped, can be focused at any location along the sample surface, allowing spatially resolved measurements. Seebeck EMF measurements, associated with a versatile model based on the thermal quadrupoles method, allow determination of the sample Seebeck EMF profile and identifying of the sample thermal contact resistances, and should be useful for identification of devices and material thermoelectric properties.

Characterization of thermoelectric devices by laser induced Seebeck electromotive force (LIS-EMF) measurement

International Nuclear Information System (INIS)

Lopez, Luis-David Patino; Dilhaire, Stefan; Grauby, Stephane; Salhi, M Amine; Ezzahri, Younes; Claeys, Wilfrid; Batsale, Jean-Christophe

2005-01-01

An in-depth study related to a new method of characterizing properties in thermoelectrics is proposed in this paper. This technique is appropriate for single or multi-layered thermoelectric devices. A modulated laser beam is used as a heater in order to generate a Seebeck electromotive force (EMF). The laser beam, line shaped, can be focused at any location along the sample surface, allowing spatially resolved measurements. Seebeck EMF measurements, associated with a versatile model based on the thermal quadrupoles method, allow determination of the sample Seebeck EMF profile and identifying of the sample thermal contact resistances, and should be useful for identification of devices and material thermoelectric properties

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

International Nuclear Information System (INIS)

Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

2015-01-01

We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J th ) of ∼3.5 kA/cm 2 , compared to the ITO VCSEL J th of 8 kA/cm 2 . The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

Energy Technology Data Exchange (ETDEWEB)

Leonard, J. T., E-mail: jtleona01@gmail.com; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2015-08-31

We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J{sub th}) of ∼3.5 kA/cm{sup 2}, compared to the ITO VCSEL J{sub th} of 8 kA/cm{sup 2}. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.

A solvent/non-solvent system for achieving solution-processed multilayer organic light-emitting devices

Energy Technology Data Exchange (ETDEWEB)

Yu, Yue; Wu, Zhaoxin, E-mail: zhaoxinwu@mail.xjtu.edu.cn; He, Lin; Jiao, Bo; Hou, Xun

2015-08-31

We developed a solvent/non-solvent system to fabricate the multilayer organic light-emitting devices (OLEDs) based on poly(N-vinylcarbazole) (PVK) by solution-process. This solvent system consists of both the solvent and non-solvent of PVK, in which fluorescent small molecules could be fully dissolved and directly spin-coated on top of the PVK layer; it could effectively avoid the redissolution of PVK during the spin-coating process of small molecules emitting layer. In the further investigation of this system, we also demonstrated the three-component solvent system, and found out that the third component, a less volatile solvent of PVK, was crucial for preparing a smoother interface between PVK and emitting layer. Compared with OLEDs through the vacuum deposition, the devices fabricated by solution-process from the solvent/non-solvent system showed comparable efficiency, which indicate that the solvent/non-solvent system can be used as an alternative process to prepare the polymer and small molecule multilayer devices through all-solution-process. - Highlights: • We fabricate the multilayer OLEDs by solution-process using a novel system. • We develop a solvent/non-solvent system of polymer (PVK) to avoid redissolution. • Small molecules could be fully dissolved and directly spin-coated on PVK layer. • The devices fabricated by the system and vacuum deposition show comparable efficiency.

Surface Plasmon Enhanced Phosphorescent Organic Light Emitting Diodes

International Nuclear Information System (INIS)

Bazan, Guillermo; Mikhailovsky, Alexander

2008-01-01

The objective of the proposed work was to develop the fundamental understanding and practical techniques for enhancement of Phosphorescent Organic Light Emitting Diodes (PhOLEDs) performance by utilizing radiative decay control technology. Briefly, the main technical goal is the acceleration of radiative recombination rate in organometallic triplet emitters by using the interaction with surface plasmon resonances in noble metal nanostructures. Increased photonic output will enable one to eliminate constraints imposed on PhOLED efficiency by triplet-triplet annihilation, triplet-polaron annihilation, and saturation of chromophores with long radiative decay times. Surface plasmon enhanced (SPE) PhOLEDs will operate more efficiently at high injection current densities and will be less prone to degradation mechanisms. Additionally, introduction of metal nanostructures into PhOLEDs may improve their performance due to the improvement of the charge transport through organic layers via multiple possible mechanisms ('electrical bridging' effects, doping-like phenomena, etc.). SPE PhOLED technology is particularly beneficial for solution-fabricated electrophosphorescent devices. Small transition moment of triplet emitters allows achieving a significant enhancement of the emission rate while keeping undesirable quenching processes introduced by the metal nanostructures at a reasonably low level. Plasmonic structures can be introduced easily into solution-fabricated PhOLEDs by blending and spin coating techniques and can be used for enhancement of performance in existing device architectures. This constitutes a significant benefit for a large scale fabrication of PhOLEDs, e.g. by roll-to-roll fabrication techniques. Besides multieexciton annihilation, the power efficacy of PhOLEDs is often limited by high operational bias voltages required for overcoming built-in potential barriers to injection and transport of electrical charges through a device. This problem is especially

Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers

Energy Technology Data Exchange (ETDEWEB)

Böttge, C. N., E-mail: boettge@optics.arizona.edu; Hader, J.; Kilen, I.; Moloney, J. V. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Koch, S. W. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)

2014-12-29

A fully microscopic many-body Maxwell–semiconductor Bloch model is used to investigate the influence of the non-equilibrium carrier dynamics on the short-pulse amplification in mode-locked semiconductor microlaser systems. The numerical solution of the coupled equations allows for a self-consistent investigation of the light–matter coupling dynamics, the carrier kinetics in the saturable absorber and the multiple-quantum-well gain medium, as well as the modification of the light field through the pulse-induced optical polarization. The influence of the pulse-induced non-equilibrium modifications of the carrier distributions in the gain medium and the saturable absorber on the single-pulse amplification in the laser cavity is identified. It is shown that for the same structure, quantum wells, and gain bandwidth the non-equilibrium carrier dynamics lead to two preferred operation regimes: one with pulses in the (sub-)100 fs-regime and one with multi-picosecond pulses. The recovery time of the saturable absorber determines in which regime the device operates.

InGaN/GaN Nanowire LEDs and Lasers

KAUST Repository

Zhao, Chao

2016-01-01

The large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the “green-gap” and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.

Laser-induced selective copper plating of polypropylene surface

Science.gov (United States)

Ratautas, K.; Gedvilas, M.; Stankevičiene, I.; JagminienÄ--, A.; Norkus, E.; Li Pira, N.; Sinopoli, S.; Emanuele, U.; Račiukaitis, G.

2016-03-01

Laser writing for selective plating of electro-conductive lines for electronics has several significant advantages, compared to conventional printed circuit board technology. Firstly, this method is faster and cheaper at the prototyping stage. Secondly, material consumption is reduced, because it works selectively. However, the biggest merit of this method is potentiality to produce moulded interconnect device, enabling to create electronics on complex 3D surfaces, thus saving space, materials and cost of production. There are two basic techniques of laser writing for selective plating on plastics: the laser-induced selective activation (LISA) and laser direct structuring (LDS). In the LISA method, pure plastics without any dopant (filler) can be used. In the LDS method, special fillers are mixed in the polymer matrix. These fillers are activated during laser writing process, and, in the next processing step, the laser modified area can be selectively plated with metals. In this work, both methods of the laser writing for the selective plating of polymers were investigated and compared. For LDS approach, new material: polypropylene with carbon-based additives was tested using picosecond and nanosecond laser pulses. Different laser processing parameters (laser pulse energy, scanning speed, the number of scans, pulse durations, wavelength and overlapping of scanned lines) were applied in order to find out the optimal regime of activation. Areal selectivity tests showed a high plating resolution. The narrowest width of a copper-plated line was less than 23 μm. Finally, our material was applied to the prototype of the electronic circuit board on a 2D surface.

Electron emitting filaments for electron discharge devices

International Nuclear Information System (INIS)

Leung, K.N.; Pincosy, P.A.; Ehlers, K.W.

1988-01-01

This patent describes an electron emitting device for use in an electron discharge system. It comprises: a filament having a pair of terminal ends, electrical supply means for supplying electrical power to the terminal ends of the filament for directly heating the filament by the passage of an electrical current along the filament between the terminal ends, the filament being substantially tapered in cross section continuously in one direction from one of its pair of terminal ends to another of its pair of terminal ends to achieve uniform heating of the filament along the length thereof by compensating for the nonuniform current along the filament due to the emission of electrons therefrom

Wavelength selectivity of on-axis surface plasmon laser filters

International Nuclear Information System (INIS)

Harmer, S W; Townsend, P D

2002-01-01

Excitation of surface plasmons on a metal substrate, via the attenuated total reflection method can theoretically offer preferential absorption of light at one particular wavelength, whilst reflecting the nearby spectrum. Normally this 'filtering' action is limited to removal of p-polarized light, and the acceptance angle of such a filtering device is very narrow, which limits practical applications, such as separation of fundamental and laser harmonics. The possibility of avoiding this angular precision is explored by considering the complex permittivity of metal composites. By using a two or more layer structure, as opposed to a single metal substrate, the acceptance angle of the device can be broadened, by a factor of about 15 times. An example is discussed for separation of the fundamental and harmonics from a Nd : YAG laser. Variants of the structure allow the design of an in-line transmission filter for the various wavelengths with sufficient angular tolerance to include focusing lenses. Avoidance of laser ablation of the metal is discussed

Laser patterning and welding of transparent polymers for microfluidic device fabrication

Science.gov (United States)

Pfleging, W.; Baldus, O.

2006-02-01

CO II-laser-assisted micro-patterning of polymethylmethacrylate (PMMA) or cyclo-olefin copolymer (COC) has a great potential for the rapid manufacturing of polymeric devices including cutting and structuring. Channel widths of about 50 μm as well as large area patterning of reservoir structures or drilling of vias are established. For this purpose a high quality laser beam is necessary as well as an appropriate beam forming system. In combination with laser transmission welding a fast fabrication of two- and three-dimensional micro-fluidic devices was possible. Welding as well as multilayer welding of transparent polymers was investigated for different polymers such as PMMA, polyvinylidene fluoride (PVDF), COC, and polystyrene (PS). The laser transmission welding process is performed with a high-power diode laser (wavelength 940 nm). An absorption layer with a thickness of several nanometers is deposited onto the polymer surfaces. The welding process has been established for the welding of polymeric parts containing microchannels, if the width of the channels is equal or larger than 100μm. For smaller feature sizes the absorption layer is structured by UV-laser radiation in order to get a highly localized welding seam, e.g., for the limitation of thermal penetration and thermal damaging of functional features such as channels, thin walls or temperature-sensitive substances often contained in micro-fluidic devices. This process strategy was investigated for the welding of capillary electrophoresis chips and capillary blood separation chips, including channel widths of 100 μm and 30 μm. Analysis of the thickness of the absorption layer was carried out with optical transmission spectroscopy.

Multi-point laser ignition device

Energy Technology Data Exchange (ETDEWEB)

McIntyre, Dustin L.; Woodruff, Steven D.

2017-01-17

A multi-point laser device comprising a plurality of optical pumping sources. Each optical pumping source is configured to create pumping excitation energy along a corresponding optical path directed through a high-reflectivity mirror and into substantially different locations within the laser media thereby producing atomic optical emissions at substantially different locations within the laser media and directed along a corresponding optical path of the optical pumping source. An output coupler and one or more output lenses are configured to produce a plurality of lasing events at substantially different times, locations or a combination thereof from the multiple atomic optical emissions produced at substantially different locations within the laser media. The laser media is a single continuous media, preferably grown on a single substrate.

Effect of Q-switched Laser Surface Texturing of Titanium on Osteoblast Cell Response

Science.gov (United States)

Voisey, K. T.; Scotchford, C. A.; Martin, L.; Gill, H. S.

Titanium and its alloys are important biomedical materials. It is known that the surface texture of implanted medical devices affects cell response. Control of cell response has the potential to enhance fixation of implants into bone and, in other applications, to prevent undesired cell adhesion. The potential use of a 100W Q-switched YAG laser miller (DMG Lasertec 60 HSC) for texturing titanium is investigated. A series of regular features with dimensions of the order of tens of micrometers are generated in the surface of titanium samples and the cell response to these features is determined. Characterisation of the laser milled features reveals features with a lengthscale of a few microns superposed on the larger scale structures, this is attributed to resolidification of molten droplets generated and propelled over the surface by individual laser pulses. The laser textured samples are exposed to osteoblast cells and it is seen that cells do respond to the features in the laser textured surfaces.

A full-duplex working integrated optoelectronic device for optical interconnect

Science.gov (United States)

Liu, Kai; Fan, Huize; Huang, Yongqing; Duan, Xiaofeng; Wang, Qi; Ren, Xiaomin; Wei, Qi; Cai, Shiwei

2018-05-01

In this paper, a full-duplex working integrated optoelectronic device is proposed. It is constructed by integrating a vertical cavity surface emitting laser (VCSEL) unit above a resonant cavity enhanced photodetector (RCE-PD) unit. Analysis shows that, the VCSEL unit has a threshold current of 1 mA and a slop efficiency of 0.66 W/A at 849.7 nm, the RCE-PD unit obtains its maximal absorption quantum efficiency of 90.24% at 811 nm with a FWHM of 4 nm. Moreover, the two units of the proposed integrated device can work independently from each other. So that the proposed integrated optoelectronic device can work full-duplex. It can be applied for single fiber bidirectional optical interconnects system.

The effect of dopant-induced electron traps on spectrum evolution of doped organic light-emitting devices

Energy Technology Data Exchange (ETDEWEB)

Zhan, Y.Q. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China)]. E-mail: yqzhan@fudan.edu.cn; Zhou, J. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Zhou, Y.C. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Wu, Y. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Yang, H. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Li, F.Y. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Ding, X.M. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Hou, X.Y. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China)]. E-mail: xyhou@fudan.edu.cn

2007-05-07

A prototype of light emitting device with two symmetrically located Al/LiF electrodes is fabricated to study the voltage dependence of emission spectra. 4-(dicyanomethylene)-2-methyl-6- (pdimethylaminostyryl)-4H-pyran doped tris-(8-hydroxy-quinolinato) aluminum thin film is the emitting layer of the device. Experiments show that with increasing applied voltage the emission intensity of the device decreases, of which the dopant emission intensity decreases more steeply than that of the host. Based on the theory of space-charge-limited current in insulator with a single shallow trap level it is deduced that the photoluminescence intensity of the dopant emission decreases linearly with applied voltage, in good agreement with experimental measurements. The evolution of the emission spectra can be well explained by the suggested mechanism that the electrons are trapped in the dopant molecules, which blocks the energy transfer from the host, and leads to more excitons in the host to emit light.

The effect of dopant-induced electron traps on spectrum evolution of doped organic light-emitting devices

International Nuclear Information System (INIS)

Zhan, Y.Q.; Zhou, J.; Zhou, Y.C.; Wu, Y.; Yang, H.; Li, F.Y.; Ding, X.M.; Hou, X.Y.

2007-01-01

A prototype of light emitting device with two symmetrically located Al/LiF electrodes is fabricated to study the voltage dependence of emission spectra. 4-(dicyanomethylene)-2-methyl-6- (pdimethylaminostyryl)-4H-pyran doped tris-(8-hydroxy-quinolinato) aluminum thin film is the emitting layer of the device. Experiments show that with increasing applied voltage the emission intensity of the device decreases, of which the dopant emission intensity decreases more steeply than that of the host. Based on the theory of space-charge-limited current in insulator with a single shallow trap level it is deduced that the photoluminescence intensity of the dopant emission decreases linearly with applied voltage, in good agreement with experimental measurements. The evolution of the emission spectra can be well explained by the suggested mechanism that the electrons are trapped in the dopant molecules, which blocks the energy transfer from the host, and leads to more excitons in the host to emit light

Device Engineering and Degradation Mechanism Study of All-Phosphorescent White Organic Light-Emitting Diodes

Science.gov (United States)

Xu, Lisong

compositions of these layers, we were able to achieve high-efficiency WOLEDs with controllable white emission characteristics. We showed that we can use the ultra-thin co-doped layer and two blue emitting layers to manipulate exciton confinement to certain zones and energy transfer pathways between the various hosts and dopants. Third, a blue phosphorescent dopant tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (Ir(iprpmi)3) with a low ionization potential (HOMO 4.8 eV) and propensity for hole-trapping was studied in WOLEDs. In a bipolar host, 2,6-bis(3-(carbazol-9-yl)phenyl)-pyridine (DCzPPy), Ir(iprpmi)3 was found to trap holes at low concentrations but transport holes at higher concentrations. By adjusting the dopant concentration and thereby the location of the recombination zone, we were able to demonstrate blue and white OLEDs with external quantum efficiencies over 20%. The fabricated WOLEDs shows high color stability over a wide range of luminance. Moreover, the device lifetime has also been improved with Ir(iprpmi)3 as the emitter compared to FIrpic. Last, we analyzed OLED degradation using Laser Desorption Time-Of-Flight Mass Spectrometry (LDI-TOF-MS) technique. By carefully and systematically comparing the LDI-TOF patterns of electrically/optically stressed and controlled (unstressed) OLED devices, we were able to identify some prominent degradation byproducts and trace possible chemical pathways involving specific host and dopant materials.

Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers

Energy Technology Data Exchange (ETDEWEB)

Willander, M; Nur, O; Zhao, Q X; Yang, L L [Department of Science and Technology, Linkoeping University, SE-601 74 Norrkoeping (Sweden); Lorenz, M; Cao, B Q; Zuniga Perez, J; Czekalla, C; Zimmermann, G; Grundmann, M [Institut fuer Experimentelle Physik II, Universitaet Leipzig, Linnestrasse 5, D-04103 Leipzig (Germany); Bakin, A; Behrends, A; Al-Suleiman, M; El-Shaer, A; Che Mofor, A; Postels, B; Waag, A [Institute of Semiconductor Technology, Technical University of Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany); Boukos, N; Travlos, A [National Center for Scientific Research ' Demokritos' , Institute of Materials Science, GR 15310 Agia Paraskevi Attikis, Athens (Greece); Kwack, H S, E-mail: magwi@itn.liu.s [CEA-CNRS Group ' Nanophysique et Semiconducteurs' , Institut Neel, CNRS and Universit' e Joseph Fourier, F-38042 Grenoble (France)

2009-08-19

Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal-organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour-liquid-solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro- and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I-V characteristics of ZnO:P nanowire/ZnO:Ga p-n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence

Three-peak standard white organic light-emitting devices for solid-state lighting

Science.gov (United States)

Guo, Kunping; Wei, Bin

2014-12-01

Standard white organic light-emitting device (OLED) lighting provides a warm and comfortable atmosphere and shows mild effect on melatonin suppression. A high-efficiency red OLED employing phosphorescent dopant has been investigated. The device generates saturated red emission with Commission Internationale de l'Eclairage (CIE) coordinates of (0.66, 0.34), characterized by a low driving voltage of 3.5 V and high external quantum efficiency of 20.1% at 130 cd m-2. In addition, we have demonstrated a two-peak cold white OLED by combining with a pure blue emitter with the electroluminescent emission of 464 nm, 6, 12-bis{[N-(3,4-dimethylpheyl)-N-(2,4,5-trimethylphenyl)]} chrysene (BmPAC). It was found that the man-made lighting device capable of yielding a relatively stable color emission within the luminance range of 1000-5000 cd m-2. And the chromaticity coordinates, varying from (0.25, 0.21) to (0.23, 0.21). Furthermore, an ultrathin layer of green-light-emitting tris (2-phenylpyridinato)iridium(Ⅲ) Ir(ppy)3 in the host material was introduced to the emissive region for compensating light. By appropriately controlling the layer thickness, the white light OLED achieved good performance of 1280 cd m-2 at 5.0 V and 5150 cd m-2 at 7.0 V, respectively. The CIE coordinates of the emitted light are quite stable at current densities from 759 cd m-2 to 5150 cd m-2, ranging from (0.34, 0.37) to (0.33, 0.33).

Quantum-cascade laser photoacoustic detection of methane emitted from natural gas powered engines

Science.gov (United States)

Rocha, M. V.; Sthel, M. S.; Silva, M. G.; Paiva, L. B.; Pinheiro, F. W.; Miklòs, A.; Vargas, H.

2012-03-01

In this work we present a laser photoacoustic arrangement for the detection of the important greenhouse gas methane. A quantum-cascade laser and a differential photoacoustic cell were employed. A detection limit of 45 ppbv in nitrogen was achieved as well as a great selectivity. The same methodology was also tested in the detection of methane issued from natural gas powered vehicles (VNG) in Brazil, which demonstrates the excellent potential of this arrangement for greenhouse gas detection emitted from real sources.

Surface modifications induced by pulsed-laser texturing—Influence of laser impact on the surface properties

Energy Technology Data Exchange (ETDEWEB)

Costil, S., E-mail: sophie.costil@utbm.fr [IRTES-LERMPS, Université de Technologie de Belfort - Montbéliard, site de Sévenans, 90010 Belfort Cedex (France); Lamraoui, A.; Langlade, C. [IRTES-LERMPS, Université de Technologie de Belfort - Montbéliard, site de Sévenans, 90010 Belfort Cedex (France); Heintz, O.; Oltra, R. [ICB, Université de Bourgogne, 21078 Dijon Cedex (France)

2014-01-01

Laser cleaning technology provides a safe, environmentally friendly and very cost effective way to improve cleaning and surface preparation of metallic materials. Compared with efficient cleaning processes, it can avoid the disadvantages of ductile materials prepared by conventional technologies (cracks induced by sand-blasting for example) and treat only some selected areas (due to the optical fibers). By this way, laser technology could have several advantages and expand the range of thermal spraying. Moreover, new generations of lasers (fiber laser, disc laser) allow the development of new methods. Besides a significant bulk reduction, no maintenance, low operating cost, laser fibers can introduce alternative treatments. Combining a short-pulse laser with a scanner allows new applications in terms of surface preparation. By multiplying impacts using scanning laser, it is possible to shape the substrate surface to improve the coating adhesion as well as the mechanical behaviour. In addition, during the interactions of the laser beam with metallic surfaces, several modifications can be induced and particularly thermal effects. Indeed, under ambient conditions, a limited oxidation of the clean surface can occur. This phenomenon has been investigated in detail for silicon but few works have been reported concerning metallic materials. This paper aims at studying the surface modifications induced on aluminium alloy substrates after laser texturing. After morphological observations (SEM), a deeper surface analysis will be performed using XPS (X-ray photoelectron spectroscopy) measures and microhardness testing.

Mechanism of equivalent electric dipole oscillation for high-order harmonic generation from grating-structured solid-surface by femtosecond laser pulse

Energy Technology Data Exchange (ETDEWEB)

Wang, Yang; Song, Hai-Ying; Liu, H.Y.; Liu, Shi-Bing, E-mail: sbliu@bjut.edu.cn

2017-07-12

Highlights: • Proposed a valid mechanism of high harmonic generation by laser grating target interaction: oscillation of equivalent electric dipole (OEED). • Found that there also exist harmonic emission at large emission angle but not just near-surface direction as the former researches had pointed out. • Show the process of the formation and motion of electron bunches at the grating-target surface irradiating with femtosecond laser pulse. - Abstract: We theoretically study high-order harmonic generation (HHG) from relativistically driven overdense plasma targets with rectangularly grating-structured surfaces by femtosecond laser pulses. Our particle-in-cell (PIC) simulations show that, under the conditions of low laser intensity and plasma density, the harmonics emit principally along small angles deviating from the target surface. Further investigation of the surface electron dynamics reveals that the electron bunches are formed by the interaction between the laser field and the target surface, giving rise to the oscillation of equivalent electric-dipole (OEED), which enhances specific harmonic orders. Our work helps understand the mechanism of harmonic emissions from grating targets and the distinction from the planar harmonic scheme.

Spray deposition of organic electroluminescent coatings for application in flexible light emitting devices

Directory of Open Access Journals (Sweden)

Mariya Aleksandrova

2015-12-01

Full Text Available Organic electroluminescent (EL films of tris(8-hydroxyquinolinatoaluminum (Alq3 mixed with polystyrene (PS binder were produced by spray deposition. The influence of the substrate temperature on the layer’s morphology and uniformity was investigated. The deposition conditions were optimized and simple flexible light-emitting devices consisting of indium-tin oxide/Alq3:PS/aluminum were fabricated on polyethylene terephthalate (PET foil to demonstrate the advantages of the sprayed organic coatings. Same structure was produced by thermal evaporation of Alq3 film as a reference. The influence of the deposition method on the film roughness and contact resistance at the electrode interfaces for both types of structures was estimated. The results were related to the devices’ efficiency. It was found that the samples with sprayed films turn on at 4 V, which is 2 V lower in comparison to the device with thermal evaporated Alq3. The current through the sprayed device is six times higher as well (17 mA vs. 2.8 mA at 6.5 V, which can be ascribed to the lower contact resistance at the EL film/electrode interfaces. This is due to the lower surface roughness of the pulverized layers.

Robust Visible and Infrared Light Emitting Devices Using Rare-Earth-Doped GaN

National Research Council Canada - National Science Library

Steckl, Andrew

2006-01-01

Rare earth (RE) dopants (such as Er, Eu, Tm) in the wide bandgap semiconductor (WBGS) GaN are investigated for the fabrication of robust visible and infrared light emitting devices at a variety of wavelengths...

Magnetically switched power supply system for lasers

Science.gov (United States)

Pacala, Thomas J. (Inventor)

1987-01-01

A laser power supply system is described in which separate pulses are utilized to avalanche ionize the gas within the laser and then produce a sustained discharge to cause the gas to emit light energy. A pulsed voltage source is used to charge a storage device such as a distributed capacitance. A transmission line or other suitable electrical conductor connects the storage device to the laser. A saturable inductor switch is coupled in the transmission line for containing the energy within the storage device until the voltage level across the storage device reaches a predetermined level, which level is less than that required to avalanche ionize the gas. An avalanche ionization pulse generating circuit is coupled to the laser for generating a high voltage pulse of sufficient amplitude to avalanche ionize the laser gas. Once the laser gas is avalanche ionized, the energy within the storage device is discharged through the saturable inductor switch into the laser to provide the sustained discharge. The avalanche ionization generating circuit may include a separate voltage source which is connected across the laser or may be in the form of a voltage multiplier circuit connected between the storage device and the laser.

Laser-generated shock wave attenuation aimed at microscale pyrotechnic device design

Directory of Open Access Journals (Sweden)

Hyeonju Yu

2016-05-01

Full Text Available To meet the rising demand for miniaturizing the pyrotechnic device that consists of donor/acceptor pair separated by a bulkhead or a thin gap, the shock initiation sensitivity in the microscale gap test configuration is investigated. For understanding the shock attenuation within a gap sample (304 stainless steel thickness of 10∼800 μm, the laser-generated shock wave in water confinement is adopted. The shock properties are obtained from the free surface velocity by making use of a velocity interferometer system for any reflector (VISAR. Analytical models for plasma generation in a confined geometry and for evolution and decay of shock waves during the propagation are considered. The shape and amplitude of the laser-driven initial pressure load and its attenuation pattern in the gap are effectively controlled for targeting the microscale propagation distance and subsequent triggering pressure for the acceptor charge. The reported results are important in the precise controlling of the shock strength during the laser initiation of microscale pyrotechnic devices.

Simultaneous 3D-vibration measurement using a single laser beam device

Science.gov (United States)

Brecher, Christian; Guralnik, Alexander; Baümler, Stephan

2012-06-01

Today's commercial solutions for vibration measurement and modal analysis are 3D-scanning laser doppler vibrometers, mainly used for open surfaces in the automotive and aerospace industries and the classic three-axial accelerometers in civil engineering, for most industrial applications in manufacturing environments, and particularly for partially closed structures. This paper presents a novel measurement approach using a single laser beam device and optical reflectors to simultaneously perform 3D-dynamic measurement as well as geometry measurement of the investigated object. We show the application of this so called laser tracker for modal testing of structures on a mechanical manufacturing shop floor. A holistic measurement method is developed containing manual reflector placement, semi-automated geometric modeling of investigated objects and fully automated vibration measurement up to 1000 Hz and down to few microns amplitude. Additionally the fast set up dynamic measurement of moving objects using a tracking technique is presented that only uses the device's own functionalities and does neither require a predefined moving path of the target nor an electronic synchronization to the moving object.

Femtosecond laser-induced surface wettability modification of polystyrene surface

Science.gov (United States)

Wang, Bing; Wang, XinCai; Zheng, HongYu; Lam, YeeCheong

2016-12-01

In this paper, we demonstrated a simple method to create either a hydrophilic or hydrophobic surface. With femtosecond laser irradiation at different laser parameters, the water contact angle (WCA) on polystyrene's surface can be modified to either 12.7° or 156.2° from its original WCA of 88.2°. With properly spaced micro-pits created, the surface became hydrophilic probably due to the spread of the water droplets into the micro-pits. While with properly spaced micro-grooves created, the surface became rough and more hydrophobic. We investigated the effect of laser parameters on WCAs and analyzed the laser-treated surface roughness, profiles and chemical bonds by surface profilometer, scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). For the laser-treated surface with low roughness, the polar (such as C—O, C=O, and O—C=O bonds) and non-polar (such as C—C or C—H bonds) groups were found to be responsible for the wettability changes. While for a rough surface, the surface roughness or the surface topography structure played a more significant role in the changes of the surface WCA. The mechanisms involved in the laser surface wettability modification process were discussed.

Bistable laser device with multiple coupled active vertical-cavity resonators

Science.gov (United States)

Fischer, Arthur J.; Choquette, Kent D.; Chow, Weng W.

2003-08-19

A new class of bistable coupled-resonator vertical-cavity semiconductor laser devices has been developed. These bistable laser devices can be switched, either electrically or optically, between lasing and non-lasing states. A switching signal with a power of a fraction of a milliwatt can change the laser output of such a device by a factor of a hundred, thereby enabling a range of optical switching and data encoding applications.

Complex-enhanced chaotic signals with time-delay signature suppression based on vertical-cavity surface-emitting lasers subject to chaotic optical injection

Science.gov (United States)

Chen, Jianjun; Duan, Yingni; Zhong, Zhuqiang

2018-03-01

A chaotic system is constructed on the basis of vertical-cavity surface-emitting lasers (VCSELs), where a slave VCSEL subject to chaotic optical injection (COI) from a master VCSEL with the external feedback. The complex degree (CD) and time-delay signature (TDS) of chaotic signals generated by this chaotic system are investigated numerically via permutation entropy (PE) and self-correlation function (SF) methods, respectively. The results show that, compared with master VCSEL subject to optical feedback, complex-enhanced chaotic signals with TDS suppression can be achieved for S-VCSEL subject to COI. Meanwhile, the influences of several controllable parameters on the evolution maps of CD of chaotic signals are carefully considered. It is shown that the CD of chaotic signals for S-VCSEL is always higher than that for M-VCSEL due to the CIO effect. The TDS of chaotic signals can be significantly suppressed by choosing the reasonable parameters in this system. Furthermore, TDS suppression and high CD chaos can be obtained simultaneously in the specific parameter ranges. The results confirm that this chaotic system may effectively improve the security of a chaos-based communication scheme.

Capturing triplet emission in white organic light emitting devices

Energy Technology Data Exchange (ETDEWEB)

Singh, Jai [Faculty of EHSE, School of Engineering and IT, B-purple-12, Charles Darwin University, Darwin, NT 0909 (Australia)

2011-08-15

The state-of-the art in the white organic light emitting devices (WOLEDs) is reviewed for further developments with a view to enhance the capture of triplet emission. In particular, applying the new exciton-spin-orbit-photon interaction operator as a perturbation, rates of spontaneous emission are calculated in a few phosphorescent materials and compared with experimental results. For iridium based phosphorescent materials the rates agree quite well with the experimental results. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

A semiconductor laser device

Energy Technology Data Exchange (ETDEWEB)

Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

1984-03-17

A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

Multiquantum well beam-steering device for laser satellite communication

Science.gov (United States)

Lahat, Roee; Levy, Itamar; Shlomi, Arnon

2002-01-01

With the increasing interest in laser satellite communications, new methods are sought to solve the existing problems of accurate and rapid laser beam deflection. Current solutions in the form of galvanometers or piezo fast steering mirrors with one or two degrees of freedom are bulky, power-consuming and slow. The Multi-Quantum Well (MQW) is a semiconductor device with unique potential to steer laser beams without any moving parts. We have conducted a preliminary evaluation of the potential application of the MQW as a laser beam-steering device for laser satellite communication, examining the performance of critical parameters for this type of communications.

Highly Flexible and Efficient Fabric-Based Organic Light-Emitting Devices for Clothing-Shaped Wearable Displays.

Science.gov (United States)

Choi, Seungyeop; Kwon, Seonil; Kim, Hyuncheol; Kim, Woohyun; Kwon, Jung Hyun; Lim, Myung Sub; Lee, Ho Seung; Choi, Kyung Cheol

2017-07-25

Recently, the role of clothing has evolved from merely body protection, maintaining the body temperature, and fashion, to advanced functions such as various types of information delivery, communication, and even augmented reality. With a wireless internet connection, the integration of circuits and sensors, and a portable power supply, clothes become a novel electronic device. Currently, the information display is the most intuitive interface using visualized communication methods and the simultaneous concurrent processing of inputs and outputs between a wearer and functional clothes. The important aspect in this case is to maintain the characteristic softness of the fabrics even when electronic devices are added to the flexible clothes. Silicone-based light-emitting diode (LED) jackets, shirts, and stage costumes have started to appear, but the intrinsic stiffness of inorganic semiconductors causes wearers to feel discomfort; thus, it is difficult to use such devices for everyday purposes. To address this problem, a method of fabricating a thin and flexible emitting fabric utilizing organic light-emitting diodes (OLEDs) was developed in this work. Its flexibility was evaluated, and an analysis of its mechanical bending characteristics and tests of its long-term reliability were carried out.

Semiconductor-based, large-area, flexible, electronic devices on {110} oriented substrates

Science.gov (United States)

Goyal, Amit

2014-08-05

Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110} textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

[100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

Science.gov (United States)

Goyal, Amit

2015-03-24

Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Laser surface texturing of tool steel: textured surfaces quality evaluation

Science.gov (United States)

Šugár, Peter; Šugárová, Jana; Frnčík, Martin

2016-05-01

In this experimental investigation the laser surface texturing of tool steel of type 90MnCrV8 has been conducted. The 5-axis highly dynamic laser precision machining centre Lasertec 80 Shape equipped with the nano-second pulsed ytterbium fibre laser and CNC system Siemens 840 D was used. The planar and spherical surfaces first prepared by turning have been textured. The regular array of spherical and ellipsoidal dimples with a different dimensions and different surface density has been created. Laser surface texturing has been realized under different combinations of process parameters: pulse frequency, pulse energy and laser beam scanning speed. The morphological characterization of ablated surfaces has been performed using scanning electron microscopy (SEM) technique. The results show limited possibility of ns pulse fibre laser application to generate different surface structures for tribological modification of metallic materials. These structures were obtained by varying the processing conditions between surface ablation, to surface remelting. In all cases the areas of molten material and re-cast layers were observed on the bottom and walls of the dimples. Beside the influence of laser beam parameters on the machined surface quality during laser machining of regular hemispherical and elipsoidal dimple texture on parabolic and hemispherical surfaces has been studied.

Visible laser and superluminescent diode based free space and underwater communications

KAUST Repository

Ooi, Boon S.

2017-01-30

We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.

Visible laser and superluminescent diode based free space and underwater communications

KAUST Repository

Ooi, Boon S.

2017-01-01

We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.

High-efficiency white organic light-emitting devices with a non-doped yellow phosphorescent emissive layer

Energy Technology Data Exchange (ETDEWEB)

Zhao Juan; Yu Junsheng, E-mail: jsyu@uestc.edu.cn; Hu Xiao; Hou Menghan; Jiang Yadong

2012-03-30

Highly efficient phosphorescent white organic light-emitting devices (PHWOLEDs) with a simple structure of ITO/TAPC (40 nm)/mCP:FIrpic (20 nm, x wt.%)/bis[2-(4-tertbutylphenyl)benzothiazolato-N,C{sup 2} Prime ] iridium (acetylacetonate) (tbt){sub 2}Ir(acac) (y nm)/Bphen (30 nm)/Mg:Ag (200 nm) have been developed, by inserting a thin layer of non-doped yellow phosphorescent (tbt){sub 2}Ir(acac) between doped blue emitting layer (EML) and electron transporting layer. By changing the doping concentration of the blue EML and the thickness of the non-doped yellow EML, a PHWOLED comprised of higher blue doping concentration and thinner yellow EML achieves a high current efficiency of 31.7 cd/A and Commission Internationale de l'Eclairage coordinates of (0.33, 0.41) at a luminance of 3000 cd/m{sup 2} could be observed. - Highlights: Black-Right-Pointing-Pointer We introduce a simplified architecture for phosphorescent white organic light-emitting device. Black-Right-Pointing-Pointer The key concept of device fabrication is combination of doped blue emissive layer (EML) with non-doped ultra-thin yellow EML. Black-Right-Pointing-Pointer Doping concentration of the blue EML and thickness of the yellow EML are sequentially adjusted. Black-Right-Pointing-Pointer High device performance is achieved due to improved charge carrier balance as well as two parallel emission mechanisms in the EMLs.

Directivity patterns and pulse profiles of ultrasound emitted by laser action on interface between transparent and opaque solids: Analytical theory

International Nuclear Information System (INIS)

Nikitin, Sergey M.; Tournat, Vincent; Chigarev, Nikolay; Castagnede, Bernard; Gusev, Vitalyi; Bulou, Alain; Zerr, Andreas

2014-01-01

The analytical theory for the directivity patterns of ultrasounds emitted from laser-irradiated interface between two isotropic solids is developed. It is valid for arbitrary combinations of transparent and opaque materials. The directivity patterns are derived both in two-dimensional and in three-dimensional geometries, by accounting for the specific features of the sound generation by the photo-induced mechanical stresses distributed in the volume, essential in the laser ultrasonics. In particular, the theory accounts for the contribution to the emitted propagating acoustic fields from the converted by the interface evanescent photo-generated compression-dilatation waves. The precise analytical solutions for the profiles of longitudinal and shear acoustic pulses emitted in different directions are proposed. The developed theory can be applied for dimensional scaling, optimization, and interpretation of the high-pressure laser ultrasonics experiments in diamond anvil cell

Improvement of ITO properties in green-light-emitting devices by using N2:O2 plasma treatment

Science.gov (United States)

Jeon, Hyeonseong; Kang, Seongjong; Oh, Hwansool

2016-01-01

Plasma treatment reduces the roughness of the indium-tin-oxide (ITO) interface in organic light emitting diodes (OLEDs). Oxygen gas is typically used in the plasma treatment of conventional OLED devices. However, in this study, nitrogen and oxygen gases were used for surface treatment to improve the properties of ITO. To investigate the improvements resulting from the use of nitrogen and oxygen plasma treatment, fabricated green OLED devices. The device's structure was ITO (600 Å) / α-NPD (500 Å) / Alq3:NKX1595 (400 Å:20 Å,5%) / LiF / Al:Li (10 Å:1000 Å). The plasma treatment was performed in a capacitive coupled plasma (CCP) type plasma treatment chamber similar to that used in the traditional oxygen plasma treatment. The results of this study show that the combined nitrogen/oxygen plasma treatment increases the lifetime, current density, and brightness of the fabricated OLED while decreasing the operating voltage relative to those of OLEDs fabricated using oxygen plasma treatment.

Efficient light-emitting devices based on platinum-complexes-anchored polyhedral oligomeric silsesquioxane materials

KAUST Repository

Yang, Xiaohui

2010-08-24

The synthesis, photophysical, and electrochemical characterization of macromolecules, consisting of an emissive platinum complex and carbazole moieties covalently attached to a polyhedral oligomeric silsesquioxane (POSS) core, is reported. Organic light-emitting devices based on these POSS materials exhibit a peak external quantum efficiency of ca. 8%, which is significantly higher than that of the analogous devices with a physical blend of the platinum complexes and a polymer matrix, and they represent noticeable improvement in the device efficiency of solution-processable phosphorescent excimer devices. Furthermore, the ratio of monomer and excimer/aggregate electroluminescent emission intensity, as well as the device efficiency, increases as the platinum complex moiety presence on the POSS macromolecules decreases. © 2010 American Chemical Society.

Physical basics of endovenous laser treatment and potential of innovative developments

Science.gov (United States)

Sroka, R.; Esipova, A.; Schmedt, C. G.

2017-04-01

During the last decade, endoluminal laser treatment (ELT) has been rapidly developing. Protocols using radially emitting ELT fibres in combination with infrared laser light show clinical advantages over the bare-fibre technique and near infrared irradiation. Although the clinical response rate is high several side effects occurred. Innovative light application systems and feedback systems are therefore being under development to potentially improve the clinical situation. The irradiation patterns of bare fibres and radially emitting 1-ring and 2-ring fibres were measured using the goniometer technique. The device robustness, device handling and tissue effects were investigated using the established ox-foot-model. Furthermore, temperature measurements were performed either intraluminal within the irradiation field using a tiny temperature sensor and on the outer surface of the vessel wall by means of a thermocamera. All fibres showed sufficient mechanical and thermal robustness. The destruction threshold is far beyond the light powers employed during clinical application. The 1-ring fibre showed very high peak temperatures for a short time, while the 2-ring-fibre hold its somewhat lower maximum temperature for a longer time. Both forms of energy application resulted in the desired shrinkage and destruction effect. In this regard, the handling of the 2-ring fibre appears subjectively more convenient with reduced sticking-related problems. Acute tissue effects could be investigated to improve the understanding especially of the interaction between handling, maneuvers and tissue effects. The 2-ring radially emitting fibre in combination with IR laser light and specific application parameters showed improved handling and safety features.

White organic light-emitting devices based on blue fluorescent dye combined with dual sub-monolayer

Energy Technology Data Exchange (ETDEWEB)

Yang, Huishan, E-mail: yanghuishan1697@163.com

2013-10-15

White organic light-emitting devices have been realized by using highly blue fluorescent dye 4,4′-Bis(2,2-diphenyl-ethen-1-yl)-4,4′-di-(tert-butyl)phenyl(p-TDPVBi) and [2-methyl-6-[2-(2, 3,6,7-tetrahydro-1H, red fluorescent dye 5H-benzo[ij] quinolizin-9-yl) ethenyl]-4H-pyran-4-ylidene] propane-dinitrile(DCM2), together with well known green fluorescent dye quinacridone (QAD). The fabrication of multilayer WOLEDs did not involve the hard-to-control doping process. The structure of the device is ITO/m-MTDATA (45 nm)/NPB(8 nm)/p-TDPVBi(15 nm)/DCM2(x nm)/Alq{sub 3} (5 nm)/QAD(y nm)/Alq{sub 3}(55 nm)/LiF(1 nm)/Al, where 4,4′,4′′-tris{N,-(3-methylphenyl)-N-phenylamine}triphenylamine (m-MTDATA) acts as a hole injection layer, N,N′-bis-(1-naphthyl)-N, N′-diphenyl-1, 1′-biph-enyl-4, 4′-diamine (NPB) acts as a hole transport layer, p-TDPVBi acts as a blue emitting layer, DCM2 acts as a red emitting layer, QAD acts as a green emitting layer, tris-(8-hydroxyquinoline) aluminum (Alq{sub 3}) acts as an electron transport layer, and WOLEDs of devices A, B, C and D are different in layer thickness of DCM2 and QAD, respectively. To change the thickness of dual sub-monolayer DCM2 and QAD, the WOLEDs were obtained. When x, y=0.05, 0.1, the Commission Internationale de 1’Eclairage (CIE) coordinates of the device change from (0.4458, 0.4589) at 3 V to (0.3137, 0.3455) at 12 V that are well in the white region, and the color temperature and color rendering index were 5348 K and 85 at 8 V, respectively. Its maximum luminance was 35260 cd/m{sup 2} at 12 V, and maximum current efficiency and maximum power efficiency were 13.54 cd/A at 12 V and 6.68 lm/W at 5 V, respectively. Moreover, the current efficiency is largely insensitive to the applied voltage. The electroluminescence intensity of white EL devices varied only little at deferent dual sub-monolayer. Device D exhibited relatively high color rendering index (CRI) in the range of 88–90, which was essentially

Influence of doping location and width of dimethylquinacridone on the performance of organic light emitting devices

International Nuclear Information System (INIS)

Li Jingze; Yahiro, Masayuki; Ishida, Kenji; Matsushige, Kazumi

2005-01-01

The influence of doping location and width of fluorescent dimethylquinacridone (DMQA) molecules on the performance of organic light emitting devices has been systematically investigated. While the doped zone is located at the interface of the hole transport layer (HTL) and the light emitting layer (EML), doping in the HTL leads to significant improvement of the external quantum efficiency relative to the undoped device, whereas the efficiency is lower than that of doping in the EML. This phenomenon is explained according to the electroluminescence (EL) process of the doped DMQA, which is dominated by Foerster energy transfer. Additionally, a device with dual doping in both HTL and EML exhibits the highest efficiency. The EL and photoluminescence spectra are also dependent on the doping sites

Organic light-emitting devices based on solution-processible quinolato-complex supramolecules

International Nuclear Information System (INIS)

Cheng, J.-A.; Chen, Chin H.; Shieh, H.-P.D.

2009-01-01

This paper discusses a new type of supramolecular material tris{5-N-[3-(9H-carbazol-9-yl)propyl]-N-(4-methylphenyl) aminesulfonyl-8-hydroxyquinolato} aluminum(III), Al(SCarq) 3 , which we synthesized using three 5-N-[3-(9H-carbazol-9-yl)propyl]-N-(4-methylphenyl) aminesulfonyl-8-hydroxyquinoline as bidentate ligands. The peak photoluminescence in the solid phase appears at 488 nm. In cyclic voltammetric measurement, two oxidation peaks, which were obtained at -5.6 and -5.9 eV, correspond to HOMO sites of carbazoyl and aluminum quinolates, respectively. In the investigation of solid morphological thin film, the flat surface was investigated using an atomic force microscope. The root mean square (rms) and mean roughness (R a ) were respectively measured to be 0.427 and 0.343 nm. For the fabrication of organic light-emitting devices (OLEDs) using spin-coating techniques, the turn-on voltage and maximum luminescence of the optimized electroluminescence device, glass/ITO (20 nm)/PEDOT:PSS (75 nm)/Al(SCarq) 3 (85 nm)/BCP (8 nm)/LiF (1 nm)/Al (200 nm), were respectively 9.6 V and 35.0 cd m -2 . Due to the electroplex formation between the carbazole (electron-donor) and the aluminum quinolates (electron-acceptor) moieties under an applied DC bias, the chromaticity of electroluminescence shifted to green-yellow with 1931 CIE x,y (0.40, 0.47)

Hot-electron surface retention in intense short-pulse laser-matter interactions.

Science.gov (United States)

Mason, R J; Dodd, E S; Albright, B J

2005-07-01

Implicit hybrid plasma simulations predict that a significant fraction of the energy deposited into hot electrons can be retained near the surface of targets with steep density gradients illuminated by intense short-pulse lasers. This retention derives from the lateral transport of heated electrons randomly emitted in the presence of spontaneous magnetic fields arising near the laser spot, from geometric effects associated with a small hot-electron source, and from E fields arising in reaction to the ponderomotive force. Below the laser spot hot electrons are axially focused into a target by the B fields, and can filament in moderate Z targets by resistive Weibel-like instability, if the effective background electron temperature remains sufficiently low. Carefully engineered use of such retention in conjunction with ponderomotive density profile steepening could result in a reduced hot-electron range that aids fast ignition. Alternatively, such retention may disturb a deeper deposition needed for efficient radiography and backside fast ion generation.

Laser working device

International Nuclear Information System (INIS)

Shibanuma, Kiyoshi; Kakudate, Satoshi; Oka, Kiyoshi; Terakado, Takuya; Kondo, Mitsunori; Munakata, Tadashi; Makino, Yoshinobu; Honda, Keizo.

1995-01-01

A transmission pipe transmits laser beams along an axis thereof, and is inserted at the top end to a pipeline to be fabricated. A flat mirror is secured to the top end of the transmission pipe, and laser beams are reflected by the mirror, passed through a fabrication nozzle and focused to a fabrication point in the pipeline to be fabricated. A lens-type light focusing system is guided to the fabrication point by a plurality of rollers rotatable in the axial direction disposed in circumferential direction each at an equal pitch at the outer circumference of the transmission pipe. A centering mechanism is disposed for keeping the transmission pipe coaxially with the pipeline to be fabricated. Further, there are also disposed a mirror-type light focusing optical system for focusing light by a paraboloidal mirror and a spherical vehicle rotatable in all directions. A laser fabrication device can be reduced in the size, and it can be used in a high temperature and highly radioactive circumstance. (N.H.)

Single-photon emission at a rate of 143 MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser

Energy Technology Data Exchange (ETDEWEB)

Schlehahn, A.; Gschrey, M.; Schnauber, P.; Schulze, J.-H.; Rodt, S.; Strittmatter, A.; Heindel, T., E-mail: tobias.heindel@tu-berlin.de; Reitzenstein, S. [Institut für Festkörperphysik, Technische Universität Berlin, Berlin 10623 (Germany); Gaafar, M.; Vaupel, M.; Stolz, W.; Rahimi-Iman, A.; Koch, M. [Department of Physics and Materials Science Center, Philipps-Universität Marburg, 35032 Marburg (Germany)

2015-07-27

We report on the realization of a quantum dot (QD) based single-photon source with a record-high single-photon emission rate. The quantum light source consists of an InGaAs QD which is deterministically integrated within a monolithic microlens with a distributed Bragg reflector as back-side mirror, which is triggered using the frequency-doubled emission of a mode-locked vertical-external-cavity surface-emitting laser (ML-VECSEL). The utilized compact and stable laser system allows us to excite the single-QD microlens at a wavelength of 508 nm with a pulse repetition rate close to 500 MHz at a pulse width of 4.2 ps. Probing the photon statistics of the emission from a single QD state at saturation, we demonstrate single-photon emission of the QD-microlens chip with g{sup (2)}(0) < 0.03 at a record-high single-photon flux of (143 ± 16) MHz collected by the first lens of the detection system. Our approach is fully compatible with resonant excitation schemes using wavelength tunable ML-VECSELs, which will optimize the quantum optical properties of the single-photon emission in terms of photon indistinguishability.

700 W blue fiber-coupled diode-laser emitting at 450 nm

Science.gov (United States)

Balck, A.; Baumann, M.; Malchus, J.; Chacko, R. V.; Marfels, S.; Witte, U.; Dinakaran, D.; Ocylok, S.; Weinbach, M.; Bachert, C.; Kösters, A.; Krause, V.; König, H.; Lell, A.; Stojetz, B.; Löffler, A.; Strauss, U.

2018-02-01

A high-power blue laser source was long-awaited for processing materials with low absorption in the near infrared (NIR) spectral range like copper or gold. Due to the huge progress of GaN-based semiconductors, the performance of blue diode-lasers has made a major step forward recently. With the availability of unprecedented power levels at cw-operating blue diode-lasers emitting at 450 nm, it was possible to set up a high-power diode-laser in the blue spectral range to address these conventional laser applications and probably beyond that to establish completely new utilizations for lasers. Within the scope of the research project "BlauLas", funded within the German photonic initiative "EFFILAS" [8] by the German Federal Ministry of Education and Research (BMBF), Laserline in cooperation with OSRAM aims to realize a cw fiber-coupled diode-laser exceeding 1 kW blue laser power. In this paper the conceptual design and experimental results of a 700 W blue fiber-coupled diode-laser are presented. Initially a close look had to be taken on the mounting techniques of the semiconductors to serve the requirements of the GaN laser diodes. Early samples were used for extensive long term tests to investigate degradation processes. With first functional laser-modules we set up fiber-coupled laser-systems for further testing. Besides adaption of well-known optical concepts a main task within the development of the laser system was the selection and examination of suitable materials and assembling in order to minimize degradation and reach adequate lifetimes. We realized R&D blue lasersystems with lifetimes above 5,000 h, which enable first application experiments on processing of various materials as well as experiments on conversion to white-light.

Applications of Gunn lasers

Science.gov (United States)

Balkan, N.; Chung, S. H.

2008-04-01

The principle of the operation of a Gunn laser is based on the band to band recombination of impact ionized non-equilibrium electron-hole pairs in propagating high field space-charge domains in a Gunn diode, which is biased above the negative differential resistance threshold and placed in a Fabry-Perot or a vertical micro cavity (VCSEL). In conventional VCSEL structures, unless specific measures such as the addition of oxide apertures and use of small windows are employed, the lack of uniformity in the density of current injected into the active region can reduce the efficiency and delay the lasing threshold. In a vertical-cavity structured Gunn device, however, the current is uniformly injected into the active region independently of the distributed Bragg reflector (DBR) layers. Therefore, lasing occurs from the entire surface of the device. The light emission from Gunn domains is an electric field induced effect. Therefore, the operation of Gunn-VCSEL or F-P laser is independent of the polarity of the applied voltage. Red-NIR VCSELs emitting in the range of 630-850 nm are also possible when Ga 1-xAl xAs (x communications. Furthermore the device may find applications as an optical clock and cross link between microwave and NIR communications. The operation of a both Gunn-Fabry-Perot laser and Gunn-VCSEL has been demonstrated by us recently. In the current work we present the potential results of experimental and theoretical studies concerning the applications together with the gain and emission characteristics of Gunn-Lasers.

Device model investigation of bilayer organic light emitting diodes

International Nuclear Information System (INIS)

Crone, B. K.; Davids, P. S.; Campbell, I. H.; Smith, D. L.

2000-01-01

Organic materials that have desirable luminescence properties, such as a favorable emission spectrum and high luminescence efficiency, are not necessarily suitable for single layer organic light-emitting diodes (LEDs) because the material may have unequal carrier mobilities or contact limited injection properties. As a result, single layer LEDs made from such organic materials are inefficient. In this article, we present device model calculations of single layer and bilayer organic LED characteristics that demonstrate the improvements in device performance that can occur in bilayer devices. We first consider an organic material where the mobilities of the electrons and holes are significantly different. The role of the bilayer structure in this case is to move the recombination away from the electrode that injects the low mobility carrier. We then consider an organic material with equal electron and hole mobilities but where it is not possible to make a good contact for one carrier type, say electrons. The role of a bilayer structure in this case is to prevent the holes from traversing the device without recombining. In both cases, single layer device limitations can be overcome by employing a two organic layer structure. The results are discussed using the calculated spatial variation of the carrier densities, electric field, and recombination rate density in the structures. (c) 2000 American Institute of Physics

CW substrate-free metal-cavity surface microemitters at 300 K

International Nuclear Information System (INIS)

Lu, Chien-Yao; Chang, Shu-Wei; Chuang, Shun Lien; Germann, Tim D; Pohl, Udo W; Bimberg, Dieter

2011-01-01

In this paper substrate-free metal-cavity surface microemitters are demonstrated. The optical cavity is formed by a metal reflector, metal-surrounded sidewall and n-doped distributed-Bragg reflector, which provides optical feedback and carrier injection. We describe a simple design principle with the modal properties modified by geometry and metal-insulator cladding. Both resonant cavity light-emitting diodes (1.85 µm diameter and 0.6 µm height) and lasers (2.0 µm diameter and 2.5 µm height) are successfully fabricated and characterized. These two types of devices operate at room temperature under continuous-wave (CW) operation. Since the devices are substrate-free, they can be bonded to any substrates. From the threshold currents of the lasers, we obtain a high characteristic temperature of 425 K in the range of 10–27 °C. We also discuss a general approach to improve the diffraction from small-aperture devices

Multipulse nanosecond laser irradiation of silicon for the investigation of surface morphology and photoelectric properties

Science.gov (United States)

Sardar, Maryam; Chen, Jun; Ullah, Zaka; Jelani, Mohsan; Tabassum, Aasma; Cheng, Ju; Sun, Yuxiang; Lu, Jian

2017-12-01

We irradiate the single crystal boron-doped silicon (Si) with different number of laser pulses at constant fluence (7.5 J cm-2) in ambient air using Nd:YAG laser and examine its surface morphology and photoelectric properties in details. The results obtained from optical micrographs reveal the increase in heat affected zone (HAZ) and melted area of laser irradiated Si with increasing number of laser pulses. The SEM micrographs evidence the formation of various surface morphologies like laser induced periodic surface structures, crater, microcracks, clusters, cavities, pores, trapped bubbles, nucleation sites, micro-bumps, redeposited material and micro- and nano-particles on the surface of irradiated Si. The surface profilometry analysis informs that the depth of crater is increased with increase in number of incident laser pulses. The spectroscopic ellipsometry reveals that the multipulse irradiation of Si changes its optical properties (refractive index and extinction coefficient). The current-voltage (I-V) characteristic curves of laser irradiated Si show that although the multipulse laser irradiation produces considerable number of surface defects and damages, the electrical properties of Si are well sustained after the multipulse irradiation. The current findings suggest that the multipulse irradiation can be an effective way to tune the optical properties of Si for the fabrication of wide range of optoelectronic devices.

First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

KAUST Repository

Majid, Mohammed Abdul; Al-Jabr, Ahmad; Oubei, Hassan M.; Alias, Mohd Sharizal; Anjum, Dalaver H.; Ng, Tien Khee; Ooi, Boon S.

2015-01-01

The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46

High performance organic distributed Bragg reflector lasers fabricated by dot matrix holography.

Science.gov (United States)

Wan, Wenqiang; Huang, Wenbin; Pu, Donglin; Qiao, Wen; Ye, Yan; Wei, Guojun; Fang, Zongbao; Zhou, Xiaohong; Chen, Linsen

2015-12-14

We report distributed Bragg reflector (DBR) polymer lasers fabricated using dot matrix holography. Pairs of distributed Bragg reflector mirrors with variable mirror separations are fabricated and a novel energy transfer blend consisting of a blue-emitting conjugated polymer and a red-emitting one is spin-coated onto the patterned substrate to complete the device. Under optical pumping, the device emits sing-mode lasing around 622 nm with a bandwidth of 0.41 nm. The working threshold is as low as 13.5 μJ/cm² (~1.68 kW/cm²) and the measured slope efficiency reaches 5.2%. The distributed feedback (DFB) cavity and the DBR cavity resonate at the same lasing wavelength while the DFB laser shows a much higher threshold. We further show that flexible DBR lasers can be conveniently fabricated through the UV-imprinting technique by using the patterned silica substrate as the mold. Dot matrix holography represents a versatile approach to control the number, the size, the location and the orientation of DBR mirrors, thus providing great flexibility in designing DBR lasers.

Efficient fluorescent deep-blue and hybrid white emitting devices based on carbazole/benzimidazole compound

KAUST Repository

Yang, Xiaohui; Zheng, Shijun; Bottger, Rebecca; Chae, HyunSik; Tanaka, Takeshi; Li, Sheng; Mochizuki, Amane; Jabbour, Ghassan E.

2011-01-01

We report the synthesis, photophysics, and electrochemical characterization of carbazole/benzimidazole-based compound (Cz-2pbb) and efficient fluorescent deep-blue light emitting devices based on Cz-2pbb with the peak external quantum efficiency

X-ray spectrum emitted by a laser-produced cerium plasma in the 7.5 to 12 A wavelength range

International Nuclear Information System (INIS)

Doron, R.; Behar, E.; Fraenkel, M.; Mandelbaum, P.; Schwob, J.L.; Zigler, A.

2001-01-01

A highly stripped cerium (Z = 58) plasma is produced by irradiating a solid cerium target with an intense short laser pulse. The X-ray spectrum emitted from the plasma is recorded in the 7.5-12 A wavelength range using a flat RAP crystal spectrometer. Ab-initio calculations using the RELAC relativistic computer code, as well as isoelectronic trends deduced from previous works, together with spectra obtained under different laser beam focusing conditions, are all employed for the identification of the spectral lines and features emitted by various ions from Fe-like Ce 32+ to As-like Ce 25+ . The technique of comparing spectra obtained using different laser intensities is also employed to confirm or to resolve some ambiguous identifications of spectral features in the spectrum of a laser-produced lanthanum plasma studied in a previous work. (orig.)

X-ray spectrum emitted by a laser-produced cerium plasma in the 7.5 to 12 A wavelength range

Energy Technology Data Exchange (ETDEWEB)

Doron, R.; Behar, E.; Fraenkel, M.; Mandelbaum, P.; Schwob, J.L.; Zigler, A. [Hebrew Univ., Jerusalem (Israel). Racah Inst. of Physics; Faenov, A.Ya.; Pikuz, T.A. [Multicharged Ion Spectra Data Center, VNIIFTRI, Mendeleevo (Russian Federation)

2001-01-01

A highly stripped cerium (Z = 58) plasma is produced by irradiating a solid cerium target with an intense short laser pulse. The X-ray spectrum emitted from the plasma is recorded in the 7.5-12 A wavelength range using a flat RAP crystal spectrometer. Ab-initio calculations using the RELAC relativistic computer code, as well as isoelectronic trends deduced from previous works, together with spectra obtained under different laser beam focusing conditions, are all employed for the identification of the spectral lines and features emitted by various ions from Fe-like Ce{sup 32+} to As-like Ce{sup 25+}. The technique of comparing spectra obtained using different laser intensities is also employed to confirm or to resolve some ambiguous identifications of spectral features in the spectrum of a laser-produced lanthanum plasma studied in a previous work. (orig.)

Swept-source optical coherence tomography powered by a 1.3-μm vertical cavity surface emitting laser enables 2.3-mm-deep brain imaging in mice in vivo

Science.gov (United States)

Choi, Woo June; Wang, Ruikang K.

2015-10-01

We report noninvasive, in vivo optical imaging deep within a mouse brain by swept-source optical coherence tomography (SS-OCT), enabled by a 1.3-μm vertical cavity surface emitting laser (VCSEL). VCSEL SS-OCT offers a constant signal sensitivity of 105 dB throughout an entire depth of 4.25 mm in air, ensuring an extended usable imaging depth range of more than 2 mm in turbid biological tissue. Using this approach, we show deep brain imaging in mice with an open-skull cranial window preparation, revealing intact mouse brain anatomy from the superficial cerebral cortex to the deep hippocampus. VCSEL SS-OCT would be applicable to small animal studies for the investigation of deep tissue compartments in living brains where diseases such as dementia and tumor can take their toll.

Highly stable cesium lead iodide perovskite quantum dot light-emitting diodes

Science.gov (United States)

Zou, Chen; Huang, Chun-Ying; Sanehira, Erin M.; Luther, Joseph M.; Lin, Lih Y.

2017-11-01

Recently, all-inorganic perovskites such as CsPbBr3 and CsPbI3, have emerged as promising materials for light-emitting applications. While encouraging performance has been demonstrated, the stability issue of the red-emitting CsPbI3 is still a major concern due to its small tolerance factor. Here we report a highly stable CsPbI3 quantum dot (QD) light-emitting diode (LED) with red emission fabricated using an improved purification approach. The device achieved decent external quantum efficiency (EQE) of 0.21% at a bias of 6 V and outstanding operational stability, with a L 70 lifetime (EL intensity decreases to 70% of starting value) of 16 h and 1.5 h under a constant driving voltage of 5 V and 6 V (maximum EQE operation) respectively. Furthermore, the device can work under a higher voltage of 7 V (maximum luminance operation) and retain 50% of its initial EL intensity after 500 s. These findings demonstrate the promise of CsPbI3 QDs for stable red LEDs, and suggest the feasibility for electrically pumped perovskite lasers with further device optimizations.

First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

KAUST Repository

Majid, Mohammed Abdul

2015-06-26

The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.

Group III nitride semiconductors for short wavelength light-emitting devices

Science.gov (United States)

Orton, J. W.; Foxon, C. T.

1998-01-01

The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of the visible region and extending well out into the ultraviolet (UV) range. They form a complete series of ternary alloys which, in principle, makes available any band gap within this range and the fact that they also generate efficient luminescence has been the main driving force for their recent technological development. High brightness visible light-emitting diodes (LEDs) are now commercially available, a development which has transformed the market for LED-based full colour displays and which has opened the way to many other applications, such as in traffic lights and efficient low voltage, flat panel white light sources. Continuously operating UV laser diodes have also been demonstrated in the laboratory, exciting tremendous interest for high-density optical storage systems, UV lithography and projection displays. In a remarkably short space of time, the nitrides have therefore caught up with and, in some ways, surpassed the wide band gap II-VI compounds (ZnCdSSe) as materials for short wavelength optoelectronic devices. The purpose of this paper is to review these developments and to provide essential background material in the form of the structural, electronic and optical properties of the nitrides, relevant to these applications. We have been guided by the fact that the devices so far available are based on the binary compound GaN (which is relatively well developed at the present time), together with the ternary alloys AlGaN and InGaN, containing modest amounts of Al or In. We therefore concentrate, to a considerable extent, on the properties of GaN, then introduce those of the alloys as appropriate, emphasizing their use in the formation of the heterostructures employed in devices. The nitrides crystallize preferentially in the hexagonal wurtzite structure and devices have so

Sub-micrometric surface texturing of AZ31 Mg-alloy through two-beam direct laser interference patterning with a ns-pulsed green fiber laser

Science.gov (United States)

Furlan, Valentina; Biondi, Marco; Demir, Ali Gökhan; Pariani, Giorgio; Previtali, Barbara; Bianco, Andrea

2017-11-01

Two-beam direct laser interference patterning (DLIP) is the method that employs two beams and provides control over the pattern geometry by regulating the angle between the beams and the wavelength of the beam. Despite the simplistic optical arrangement required for the method, the feasibility of sub-micrometric patterning of a surface depends on the correct manipulation of the process parameters, especially in the case of metallic materials. Magnesium alloys, from this point of view, exhibit further difficulty in processability due to low melting point and high reactivity. With biocompatibility and biodegradability features, Mg-alloy implants can take further advantage of surface structuring for tailoring the biological behaviour. In this work, a two-beam DLIP setup has been developed employing an industrial grade nanosecond-pulsed fiber laser emitting at 532 nm. The high repetition rate and ramped pulse profile provided by the laser were exploited for a more flexible control over the energy content deposited over the heat-sensitive Mg-alloy. The paper describes the strategies developed for controlling ramped laser emission at 20 kHz repetition rate. The process feasibility window was assessed within a large range of parameters. Within the feasibility window, a complete experimental plan was applied to investigate the effect of main laser process parameters on the pattern dimensions. Periodic surface structures with good definition down to 580 nm ± 20 nm spacing were successfully produced.

Efficiency optimization of green phosphorescent organic light-emitting device

Energy Technology Data Exchange (ETDEWEB)

Park, Jung Soo; Jeon, Woo Sik; Yu, Jae Hyung [Department of Information Display, Kyung Hee University, Dongdaemoon-gu, Seoul 130-701 (Korea, Republic of); Pode, Ramchandra, E-mail: rbpode@khu.ac.k [Department of Physics, Kyung Hee University, Dongdaemoon-gu, Seoul 130-701 (Korea, Republic of); Kwon, Jang Hyuk, E-mail: jhkwon@khu.ac.k [Department of Information Display, Kyung Hee University, Dongdaemoon-gu, Seoul 130-701 (Korea, Republic of)

2011-03-01

Using a narrow band gap host of bis[2-(2-hydroxyphenyl)-pyridine]beryllium (Bepp{sub 2}) and green phosphorescent Ir(ppy){sub 3} [fac-tris(2-phenylpyridine) iridium III] guest concentration as low as 2%, high efficiency phosphorescent organic light-emitting diode (PHOLED) is realized. Current and power efficiencies of 62.5 cd/A (max.), 51.0 lm/W (max.), and external quantum efficiency (max.) of 19.8% are reported in this green PHOLED. A low current efficiency roll-off value of 10% over the brightness of 10,000 cd/m{sup 2} is noticed in this Bepp{sub 2} single host device. Such a high efficiency is obtained by the optimization of the doping concentration with the knowledge of the hole trapping and the emission zone situations in this host-guest system. It is suggested that the reported device performance is suitable for applications in high brightness displays and lighting.

Radiation effects in optoelectronic devices

International Nuclear Information System (INIS)

Barnes, C.E.; Wiczer, J.J.

1984-05-01

Purpose of this report is to provide not only a summary of radiation damage studies at Sandia National Laboratories, but also of those in the literature on the components of optoelectronic systems: light emitting diodes (LEDs), laser diodes, photodetectors, optical fibers, and optical isolators. This review of radiation damage in optoelectronic components is structured according to device type. In each section, a brief discussion of those device properties relevant to radiation effects is given

OLED Fundamentals: Materials, Devices, and Processing of Organic Light-Emitting Diodes

Energy Technology Data Exchange (ETDEWEB)

Blochwitz-Nimoth, Jan; Bhandari, Abhinav; Boesch, Damien; Fincher, Curtis R.; Gaspar, Daniel J.; Gotthold, David W.; Greiner, Mark T.; Kido, Junji; Kondakov, Denis; Korotkov, Roman; Krylova, Valentina A.; Loeser, Falk; Lu, Min-Hao; Lu, Zheng-Hong; Lussem, Bjorn; Moro, Lorenza; Padmaperuma, Asanga B.; Polikarpov, Evgueni; Rostovtsev, Vsevolod V.; Sasabe, Hisahiro; Silverman, Gary; Thompson, Mark E.; Tietze, Max; Tyan, Yuan-Sheng; Weaver, Michael; Xin , Xu; Zeng, Xianghui

2015-05-26

What is an organic light emitting diode (OLED)? Why should we care? What are they made of? How are they made? What are the challenges in seeing these devices enter the marketplace in various applications? These are the questions we hope to answer in this book, at a level suitable for knowledgeable non-experts, graduate students and scientists and engineers working in the field who want to understand the broader context of their work. At the most basic level, an OLED is a promising new technology composed of some organic material sandwiched between two electrodes. When current is passed through the device, light is emitted. The stack of layers can be very thin and has many variations, including flexible and/or transparent. The organic material can be polymeric or composed small molecules, and may include inorganic components. The electrodes may consist of metals, metal oxides, carbon nanomaterials, or other species, though of course for light to be emitted, one electrode must be transparent. OLEDs may be fabricated on glass, metal foils, or polymer sheets (though polymeric substrates must be modified to protect the organic material from moisture or oxygen). In any event, the organic material must be protected from moisture during storage and operation. A control circuit, the exact nature of which depends on the application, drives the OLED. Nevertheless, the control circuit should have very stable current control to generate uniform light emission. OLEDs can be designed to emit a single color of light, white light, or even tunable colors. The devices can be switched on and off very rapidly, which makes them suitable for displays or for general lighting. Given the amazing complexity of the technical and design challenges for practical OLED applications, it is not surprising that applications are still somewhat limited. Although organic electroluminescence is more than 50 years old, the modern OLED field is really only about half that age – with the first high

20 Gbit/s error free transmission with ~850 nm GaAs-based vertical cavity surface emitting lasers (VCSELs) containing InAs-GaAs submonolayer quantum dot insertions

Science.gov (United States)

Lott, J. A.; Shchukin, V. A.; Ledentsov, N. N.; Stinz, A.; Hopfer, F.; Mutig, A.; Fiol, G.; Bimberg, D.; Blokhin, S. A.; Karachinsky, L. Y.; Novikov, I. I.; Maximov, M. V.; Zakharov, N. D.; Werner, P.

2009-02-01

We report on the modeling, epitaxial growth, fabrication, and characterization of 830-845 nm vertical cavity surface emitting lasers (VCSELs) that employ InAs-GaAs quantum dot (QD) gain elements. The GaAs-based VCSELs are essentially conventional in design, grown by solid-source molecular beam epitaxy, and include top and bottom gradedheterointerface AlGaAs distributed Bragg reflectors, a single selectively-oxidized AlAs waveguiding/current funneling aperture layer, and a quasi-antiwaveguiding microcavity. The active region consists of three sheets of InAs-GaAs submonolayer insertions separated by AlGaAs matrix layers. Compared to QWs the InAs-GaAs insertions are expected to offer higher exciton-dominated modal gain and improved carrier capture and retention, thus resulting in superior temperature stability and resilience to degradation caused by operating at the larger switching currents commonly employed to increase the data rates of modern optical communication systems. We investigate the robustness and temperature performance of our QD VCSEL design by fabricating prototype devices in a high-frequency ground-sourceground contact pad configuration suitable for on-wafer probing. Arrays of VCSELs are produced with precise variations in top mesa diameter from 24 to 36 μm and oxide aperture diameter from 1 to 12 μm resulting in VCSELs that operate in full single-mode, single-mode to multi-mode, and full multi-mode regimes. The single-mode QD VCSELs have room temperature threshold currents below 0.5 mA and peak output powers near 1 mW, whereas the corresponding values for full multi-mode devices range from about 0.5 to 1.5 mA and 2.5 to 5 mW. At 20°C we observe optical transmission at 20 Gb/s through 150 m of OM3 fiber with a bit error ratio better than 10-12, thus demonstrating the great potential of our QD VCSELs for applications in next-generation short-distance optical data communications and interconnect systems.

On the Properties and Design of Organic Light-Emitting Devices

Science.gov (United States)

Erickson, Nicholas C.

Organic light-emitting devices (OLEDs) are attractive for use in next-generation display and lighting technologies. In display applications, OLEDs offer a wide emission color gamut, compatibility with flexible substrates, and high power efficiencies. In lighting applications, OLEDs offer attractive features such as broadband emission, high-performance, and potential compatibility with low-cost manufacturing methods. Despite recent demonstrations of near unity internal quantum efficiencies (photons out per electron in), OLED adoption lags conventional technologies, particularly in large-area displays and general lighting applications. This thesis seeks to understand the optical and electronic properties of OLED materials and device architectures which lead to not only high peak efficiency, but also reduced device complexity, high efficiency under high excitation, and optimal white-light emission. This is accomplished through the careful manipulation of organic thin film compositions fabricated via vacuum thermal evaporation, and the introduction of a novel device architecture, the graded-emissive layer (G-EML). This device architecture offers a unique platform to study the electronic properties of varying compositions of organic semiconductors and the resulting device performance. This thesis also introduces an experimental technique to measure the spatial overlap of electrons and holes within an OLED's emissive layer. This overlap is an important parameter which is affected by the choice of materials and device design, and greatly impacts the operation of the OLED at high excitation densities. Using the G-EML device architecture, OLEDs with improved efficiency characteristics are demonstrated, achieving simultaneously high brightness and high efficiency.

Real-time monitoring of laser welding of galvanized high strength steel in lap joint configuration

Science.gov (United States)

Kong, Fanrong; Ma, Junjie; Carlson, Blair; Kovacevic, Radovan

2012-10-01

Two different cases regarding the zinc coating at the lap joint faying surface are selected for studying the influence of zinc vapor on the keyhole dynamics of the weld pool and the final welding quality. One case has the zinc coating fully removed at the faying surface; while the other case retains the zinc coating on the faying surface. It is found that removal of the zinc coating at the faying surface produces a significantly better weld quality as exemplified by a lack of spatters whereas intense spatters are present when the zinc coating is present at the faying surface. Spectroscopy is used to detect the optical spectra emitted from a laser generated plasma plume during the laser welding of galvanized high strength DP980 steel in a lap-joint configuration. A correlation between the electron temperature and defects within the weld bead is identified by using the Boltzmann plot method. The laser weld pool keyhole dynamic behavior affected by a high-pressure zinc vapor generated at the faying surface of galvanized steel lap-joint is monitored in real-time by a high speed charge-coupled device (CCD) camera assisted with a green laser as an illumination source.

{100} or 45.degree.-rotated {100}, semiconductor-based, large-area, flexible, electronic devices

Science.gov (United States)

Goyal, Amit [Knoxville, TN

2012-05-15

Novel articles and methods to fabricate the same resulting in flexible, {100} or 45.degree.-rotated {100} oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Surface plasmon quantum cascade lasers as terahertz local oscillators.

Science.gov (United States)

Hajenius, M; Khosropanah, P; Hovenier, J N; Gao, J R; Klapwijk, T M; Barbieri, S; Dhillon, S; Filloux, P; Sirtori, C; Ritchie, D A; Beere, H E

2008-02-15

We characterize a heterodyne receiver based on a surface-plasmon waveguide quantum cascade laser (QCL) emitting at 2.84 THz as a local oscillator, and an NbN hot electron bolometer as a mixer. We find that the envelope of the far-field pattern of the QCL is diffraction-limited and superimposed onto interference fringes, which are similar to those found in narrow double-metal waveguide QCLs. Compared to the latter, a more directional beam allows for better coupling of the radiation power to the mixer. We obtain a receiver noise temperature of 1050 K when the mixer is at 2 K, which, to our knowledge, is the highest sensitivity reported at frequencies beyond 2.5 THz.

Fabrication of periodical surface structures by picosecond laser irradiation of carbon thin films: transformation of amorphous carbon in nanographite

Energy Technology Data Exchange (ETDEWEB)

Popescu, C.; Dorcioman, G. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, Magurele RO-077125 (Romania); Bita, B. [National Institute for Research and Development in Microtechnologies, 126A Erou Iancu Nicolae Street, Voluntari RO-077190 (Romania); Faculty of Physics, 405 Atomistilor Street, Magurele RO-077125 (Romania); Besleaga, C.; Zgura, I. [National Institute of Materials Physics, 105bis Atomistilor Street, Magurele RO-077125 (Romania); Himcinschi, C. [Institute of Theoretical Physics, TU Bergakademie Freiberg, Freiberg D-09596 (Germany); Popescu, A.C., E-mail: andrei.popescu@inflpr.ro [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, Magurele RO-077125 (Romania)

2016-12-30

Highlights: • Ripples obtained on carbon films after irradiation with visible ps laser pulses. • Amorphous carbon was transformed in nanographite following irradiation. • Ripples had a complex morphology, being made of islands of smaller ripples. • Hydrophilic carbon films became hydrophobic after surface structuring. - Abstract: Thin films of carbon were synthesized by ns pulsed laser deposition in vacuum on silicon substrates, starting from graphite targets. Further on, the films were irradiated with a picosecond laser source emitting in visible at 532 nm. After tuning of laser parameters, we obtained a film surface covered by laser induced periodical surface structures (LIPSS). They were investigated by optical, scanning electron and atomic force microscopy. It was observed that changing the irradiation angle influences the LIPSS covered area. At high magnification it was revealed that the LIPSS pattern was quite complex, being composed of other small LIPSS islands, interconnected by bridges of nanoparticles. Raman spectra for the non-irradiated carbon films were typical for a-C type of diamond-like carbon, while the LIPSS spectra were characteristic to nano-graphite. The pristine carbon film was hydrophilic, while the LIPSS covered film surface was hydrophobic.

Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

International Nuclear Information System (INIS)

Deri, R.J.

2011-01-01

Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

Efficient white organic light-emitting devices using a thin 4,4'-bis(2,2'-diphenylvinyl)-1,1'-diphenyl layer

International Nuclear Information System (INIS)

Wang Jun; Yu Junsheng; Li Lu; Tang Xiaoqing; Jiang Yadong

2008-01-01

White organic light-emitting devices (OLEDs) were fabricated using phosphorescent material bis[2-(4-tert-butylphenyl)benzothiazolato-N,C 2' ]iridium (acetylacetonate) [(t-bt) 2 Ir(acac)] doped in 4,4'-bis(carbazol-9-yl) biphenyl (CBP) matrix as a yellow light-emitting layer and a thin layer 4,4'-bis(2,2'-diphenylvinyl)-1,1'-diphenyl (DPVBi) as the blue light-emitting layer. The light colour of the OLEDs can be adjusted by changing doped concentration and the thickness of the DPVBi thin layer. The maximum luminance and power efficiency of 5% doped device reached 15 460 cd m -2 and 8.1 lm W -1 , respectively. The 3% doped device showed the CIE coordinates of (0.344, 0.322) at 8 V and a maximum power efficiency of 5.7 lm W -1 at 4.5 V

Nanosecond laser ablation processes in aluminum-doped zinc-oxide for photovoltaic devices

Energy Technology Data Exchange (ETDEWEB)

Canteli, D., E-mail: david.canteli@ciemat.es [Division de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda. Complutense, 22, 28040 Madrid (Spain); Fernandez, S. [Division de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda. Complutense, 22, 28040 Madrid (Spain); Molpeceres, C. [Centro Laser, Universidad Politecnica de Madrid, Ctra. de Valencia Km 7.3, 28031 Madrid (Spain); Torres, I.; Gandia, J.J. [Division de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda. Complutense, 22, 28040 Madrid (Spain)

2012-09-15

Highlights: Black-Right-Pointing-Pointer A study of the ablation of AZO thin films deposited at different temperature conditions with nanosecond UV laser light for photovoltaic devices has been performed. Black-Right-Pointing-Pointer The ablation threshold of AZO thin films was measured and related with the absorption coefficient of the films at the laser wavelength, showing a direct correspondence. Black-Right-Pointing-Pointer A change in the material structure in the areas closest to the edges of laser grooves made in samples deposited at temperatures below 100 Degree-Sign C was observed and studied. - Abstract: Aiming to a future use in thin film solar modules, the processing of aluminum doped zinc oxide thin films with good optoelectronic properties with a nanosecond-pulsed ultraviolet laser has been studied. The ablation threshold fluence of the films has been determined and associated with the material properties. The ablation process has been optimized and grooves with good properties for photovoltaic devices have been obtained. The morphology of the ablated surfaces has been observed by confocal microscopy and its structure has been characterized by Raman spectroscopy. The influence of ablation parameters like focus distance, pulse energy and repetition frequency in the groove morphology has been studied with special attention to the thermal effects on the material structure.

Nanosecond laser ablation processes in aluminum-doped zinc-oxide for photovoltaic devices

International Nuclear Information System (INIS)

Canteli, D.; Fernandez, S.; Molpeceres, C.; Torres, I.; Gandía, J.J.

2012-01-01

Highlights: ► A study of the ablation of AZO thin films deposited at different temperature conditions with nanosecond UV laser light for photovoltaic devices has been performed. ► The ablation threshold of AZO thin films was measured and related with the absorption coefficient of the films at the laser wavelength, showing a direct correspondence. ► A change in the material structure in the areas closest to the edges of laser grooves made in samples deposited at temperatures below 100 °C was observed and studied. - Abstract: Aiming to a future use in thin film solar modules, the processing of aluminum doped zinc oxide thin films with good optoelectronic properties with a nanosecond-pulsed ultraviolet laser has been studied. The ablation threshold fluence of the films has been determined and associated with the material properties. The ablation process has been optimized and grooves with good properties for photovoltaic devices have been obtained. The morphology of the ablated surfaces has been observed by confocal microscopy and its structure has been characterized by Raman spectroscopy. The influence of ablation parameters like focus distance, pulse energy and repetition frequency in the groove morphology has been studied with special attention to the thermal effects on the material structure.

Surface modification of UHMWPE with infrared femtosecond laser

Energy Technology Data Exchange (ETDEWEB)

Fernandez-Pradas, J.M., E-mail: jmfernandez@ub.edu [Departament de Fisica Aplicada i Optica, Universitat de Barcelona Marti i Franques 1, E-08028 Barcelona (Spain); Naranjo-Leon, S.; Morenza, J.L.; Serra, P. [Departament de Fisica Aplicada i Optica, Universitat de Barcelona Marti i Franques 1, E-08028 Barcelona (Spain)

2012-09-15

Highlights: Black-Right-Pointing-Pointer Ultra High Molecular Weight Polyethylene surface was modified with femtosecond laser pulses at 1027 nm wavelength. Black-Right-Pointing-Pointer Surface roughness is increased. Black-Right-Pointing-Pointer Ablation efficiency is maximum for 6 {mu}J pulses. Black-Right-Pointing-Pointer Irradiated surfaces remain almost chemically unaltered. - Abstract: Ultra-high-molecular-weight polyethylene (UHMWPE) is a polymer with mechanical and corrosion properties, which make it appropriate for using in biomedical devices such as hip and knee prostheses. The surface morphology and chemistry of UHMWPE influence its biocompatibility. A laser with wavelength at 1027 nm delivering 450 fs pulses at a repetition rate of 1 kHz is used to modify the surface of UHMWPE samples with 0.45 {mu}m root mean square surface roughness. Micrometric resolution is achieved with the use of a focusing lens of 0.25 NA and pulse energies of few microjoules. The study focuses in the influence of different pulse energies and pulse overlaps on the laser-induced surface roughness and ablation yield. Confocal microscopy is used to characterize changes in the morphology of the irradiated surfaces, and their chemical structure is analyzed by attenuated total reflectance infrared and Raman spectroscopies. The roughness increases as the pulse energy increases until it reaches a maximum. The ablation yield increases with the pulse energy and pulse overlap. However, the ablation yield per pulse is lower for higher pulse overlap. Pulses of 6 {mu}J have the highest ablation efficiency. Infrared and Raman spectra of samples irradiated with low energy pulses are similar to those of the pristine sample. However, some C=C and C=O bonds can be detected after irradiation with the highest pulse energies.

Organic light-emitting devices based on solution-processible quinolato-complex supramolecules

Energy Technology Data Exchange (ETDEWEB)

Cheng, J.-A. [Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan (China)], E-mail: jacheng.ac89g@nctu.edu.tw; Chen, Chin H. [Microelectronics and Information System Research Center, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Shieh, H.-P.D. [Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

2009-02-15

This paper discusses a new type of supramolecular material tris{l_brace}5-N-[3-(9H-carbazol-9-yl)propyl]-N-(4-methylphenyl) aminesulfonyl-8-hydroxyquinolato{r_brace} aluminum(III), Al(SCarq){sub 3}, which we synthesized using three 5-N-[3-(9H-carbazol-9-yl)propyl]-N-(4-methylphenyl) aminesulfonyl-8-hydroxyquinoline as bidentate ligands. The peak photoluminescence in the solid phase appears at 488 nm. In cyclic voltammetric measurement, two oxidation peaks, which were obtained at -5.6 and -5.9 eV, correspond to HOMO sites of carbazoyl and aluminum quinolates, respectively. In the investigation of solid morphological thin film, the flat surface was investigated using an atomic force microscope. The root mean square (rms) and mean roughness (R{sub a}) were respectively measured to be 0.427 and 0.343 nm. For the fabrication of organic light-emitting devices (OLEDs) using spin-coating techniques, the turn-on voltage and maximum luminescence of the optimized electroluminescence device, glass/ITO (20 nm)/PEDOT:PSS (75 nm)/Al(SCarq){sub 3} (85 nm)/BCP (8 nm)/LiF (1 nm)/Al (200 nm), were respectively 9.6 V and 35.0 cd m{sup -2}. Due to the electroplex formation between the carbazole (electron-donor) and the aluminum quinolates (electron-acceptor) moieties under an applied DC bias, the chromaticity of electroluminescence shifted to green-yellow with 1931 CIE{sub x,y} (0.40, 0.47)

Surface Finish after Laser Metal Deposition

Science.gov (United States)

Rombouts, M.; Maes, G.; Hendrix, W.; Delarbre, E.; Motmans, F.

Laser metal deposition (LMD) is an additive manufacturing technology for the fabrication of metal parts through layerwise deposition and laser induced melting of metal powder. The poor surface finish presents a major limitation in LMD. This study focuses on the effects of surface inclination angle and strategies to improve the surface finish of LMD components. A substantial improvement in surface quality of both the side and top surfaces has been obtained by laser remelting after powder deposition.

[White organic light emitting device with dyestuff DCJTB blended in polymer].

Science.gov (United States)

Zhang, Yan-Fei; Xu, Zheng; Zhang, Fu-Jun; Wang, Yong; Zhao, Su-Ling

2008-04-01

The Alq3 and DCJTB were blended with poly (N-vinylcarbazole) (PVK) in different weight ratios and spin coated into films. Multilayer devices with the light emitting layer PVK : Alq3 : DCJTB were fabricated, and their structure was ITO/ PVK : Alq3 : DCJTB/ BCP/Alq3/LiF/Al in which BCP and Alq3 were employed as the hole-blocking and electron-transporting layers respectively, PVK is the blue light-emitting as well as hole-transporting layer. The mass proportion of PVK relative to Alq3 was tuned while the quality ratio of PVK to DCJTB remained (100 : 1). Finally, fairly pure and stabile white emission was achieved when PVK : Alq3 : DCJTB was 100 : 5 : 1. The CIE coordinate was (0.33, 0.36) at 14 V, which is very stable at various biases (10-14 V).

Detecting Latent Prints on Stone and Other Difficult Porous Surfaces via Indanedione/Zinc Chloride and Laser

Directory of Open Access Journals (Sweden)

Shiquan LIU

2016-01-01

Full Text Available Lasers and alternate light sources have been recognized as effective tools for latent print detection for over three decades. Luminescence often increases friction ridge contrast to reveal impressions otherwise undetectable. Indanedione/zinc chloride excited by a forensic light source is widely recognized as an effective process for developing latent prints on porous surfaces. This study was designed to evaluate the use of a combination of luminescence excitation and indanedione with zinc chloride to detect latent prints on stones, bricks, and similar difficult porous surfaces. The wavelengths evaluated included 400 nm (violet, 447 nm (blue, 532 nm (green, and 645 nm (red. Latent prints were deposited on a variety of porous surfaces including bricks, cement stones, wood, and cotton fabric, all commonly encountered at crime scenes in China. The surfaces were examined using white light (light-emitting diode flashlight and laser light sources separately, both before and after treatment with indanedione/zinc chloride. The goal of this study was to evaluate various light sources for their effectiveness in detecting impressions developed by indanedione/zinc chloride on difficult porous surfaces. Results indicated that latent prints on some brick and cement stone surfaces may be effectively detected using 532 nm laser excitation after indanedione/zinc chloride processing.

Polymer light emitting diodes

International Nuclear Information System (INIS)

Gautier-Thianche, Emmmanuelle

1998-01-01

We study sandwich type semiconducting polymer light emitting diodes; anode/polymer/cathode. ITO is selected as anode, this polymer is a blend of a commercially available polymer with a high hole transport ability: polyvinyl-carbazole and a laser dye: coumarin-515. Magnesium covered with silver is chosen for the anode. We study the influence of polymer thickness and coumarin doping ratio on electroluminescence spectrum, electric characteristics and quantum efficiency. An important drawback is that diodes lifetime remains low. In the second part of our study we determine degradations causes with X-Ray reflectivity experiments. It may be due to ITO very high roughness. We realize a new type of planar electroluminescent device: a channel type electroluminescent device in which polymer layer is inserted into an aluminium channel. Such a device is by far more stable than using classical sandwich structures with the same polymer composition: indeed, charges are generated by internal-field ionization and there is no injection from the electrode to the polymer. This avoids electrochemical reactions at electrodes, thus reducing degradations routes. (author) [fr

Evaluation of stray radiofrequency radiation emitted by electrosurgical devices

International Nuclear Information System (INIS)

De Marco, M; Maggi, S

2006-01-01

Electrosurgery refers to the passage of a high-frequency, high-voltage electrical current through the body to achieve the desired surgical effects. At the same time, these procedures are accompanied by a general increase of the electromagnetic field in an operating room that may expose both patients and personnel to relatively high levels of radiofrequency radiation. In the first part of this study, we have taken into account the radiation emitted by different monopolar electrosurgical devices, evaluating the electromagnetic field strength delivered by an electrosurgical handle and straying from units and other electrosurgical accessories. As a summary, in the worst case a surgeon's hands are exposed to a continuous and pulsed RF wave whose magnetic field strength is 0.75 A m -1 (E-field 400 V m -1 ). Occasionally stray radiation may exceed ICNIRP's occupational exposure guidelines, especially close to the patient return plate. In the second part of this paper, we have analysed areas of particular concern to prevent electromagnetic interference with some life-support devices (ventilators and electrocardiographic devices), which have failed to operate correctly. Most clinically relevant interference occurred when an electrosurgery device was used within 0.3 m of medical equipment. In the appendix, we suggest some practical recommendations intended to minimize the potential for electromagnetic hazards due to therapeutic application of RF energy

Active laser radar (lidar) for measurement of corresponding height and reflectance images

Science.gov (United States)

Froehlich, Christoph; Mettenleiter, M.; Haertl, F.

1997-08-01

For the survey and inspection of environmental objects, a non-tactile, robust and precise imaging of height and depth is the basis sensor technology. For visual inspection,surface classification, and documentation purposes, however, additional information concerning reflectance of measured objects is necessary. High-speed acquisition of both geometric and visual information is achieved by means of an active laser radar, supporting consistent 3D height and 2D reflectance images. The laser radar is an optical-wavelength system, and is comparable to devices built by ERIM, Odetics, and Perceptron, measuring the range between sensor and target surfaces as well as the reflectance of the target surface, which corresponds to the magnitude of the back scattered laser energy. In contrast to these range sensing devices, the laser radar under consideration is designed for high speed and precise operation in both indoor and outdoor environments, emitting a minimum of near-IR laser energy. It integrates a laser range measurement system and a mechanical deflection system for 3D environmental measurements. This paper reports on design details of the laser radar for surface inspection tasks. It outlines the performance requirements and introduces the measurement principle. The hardware design, including the main modules, such as the laser head, the high frequency unit, the laser beam deflection system, and the digital signal processing unit are discussed.the signal processing unit consists of dedicated signal processors for real-time sensor data preprocessing as well as a sensor computer for high-level image analysis and feature extraction. The paper focuses on performance data of the system, including noise, drift over time, precision, and accuracy with measurements. It discuses the influences of ambient light, surface material of the target, and ambient temperature for range accuracy and range precision. Furthermore, experimental results from inspection of buildings, monuments

Future prospects of laser diodes and fiber lasers

International Nuclear Information System (INIS)

Ueda, Ken-ichi

2000-01-01

For the next century we should develop new concepts for coherent control of light generation and propagation. Owing to the recent development of ultra fine structures in semiconductor lasers, fiber lasers, and various kinds of waveguide structure, we can make optical devices which control the light propagation artificially. But, the phase locking and phase control of multiple laser oscillators are one of the most important directions of laser science and technology. The coherent summation has been a dream of laser since 1960. Is it possible to solve this old and quite challenging problem for laser science? This is also a very basic concept because the laser action based on the stimulated emission is the process of coherent summation of huge number of photons emitted from individual atoms. In this paper, I discuss the fundamental direction of laser research in the next ten or twenty years. The active optics and laser technology should be combined intrinsically in near future. (author)

Very low roughness MAPLE-deposited films of a light emitting polymer: an alternative to spin coating

International Nuclear Information System (INIS)

Caricato, A P; Cesaria, M; Leo, C; Mazzeo, M; Genco, A; Tunno, T; Gigli, G; Martino, M; Carallo, S; Massafra, A

2015-01-01

The matrix assisted pulsed laser evaporation (MAPLE) technique is emerging as an alternative route to conventional deposition methods of organic materials (solution-phase and thermal evaporation approaches). However, the high surface roughness of the films deposited by MAPLE makes this technique not compatible with applications in electronics and photonics. In this paper we report the deposition of MAPLE-films of a green light emitting polymer, commercially named ADS125GE, with remarkable low roughness values, down to about 10 nm at the thickness conventionally used in photonic devices (∼40 nm). This issue is discussed as a function of polymer concentration, target-substrate distance and substrate rotation based on AFM topography images, roughness estimation and optical (absorption and luminescent) measurements. In addition we have fabricated an organic light emitting diode with this technique using the best deposition parameters which guarantee the lowest roughness. These results open the way to MAPLE applications in organic photonics and opto-electronics. (paper)

Estimating the Infrared Radiation Wavelength Emitted by a Remote Control Device Using a Digital Camera

Science.gov (United States)

Catelli, Francisco; Giovannini, Odilon; Bolzan, Vicente Dall Agnol

2011-01-01

The interference fringes produced by a diffraction grating illuminated with radiation from a TV remote control and a red laser beam are, simultaneously, captured by a digital camera. Based on an image with two interference patterns, an estimate of the infrared radiation wavelength emitted by a TV remote control is made. (Contains 4 figures.)

Electroluminescent Characteristics of DBPPV–ZnO Nanocomposite Polymer Light Emitting Devices

Directory of Open Access Journals (Sweden)

Madhava Rao MV

2009-01-01

Full Text Available Abstract We have demonstrated that fabrication and characterization of nanocomposite polymer light emitting devices with metal Zinc Oxide (ZnO nanoparticles and 2,3-dibutoxy-1,4-poly(phenylenevinylene (DBPPV. The current and luminance characteristics of devices with ZnO nanoparticles are much better than those of device with pure DBPPV. Optimized maximum luminance efficiencies of DBPPV–ZnO (3:1 wt% before annealing (1.78 cd/A and after annealing (2.45 cd/A having a brightness 643 and 776 cd/m2at a current density of 36.16 and 31.67 mA/cm2are observed, respectively. Current density–voltage and brightness–voltage characteristics indicate that addition of ZnO nanoparticles can facilitate electrical injection and charge transport. The thermal annealing is thought to result in the formation of an interfacial layer between emissive polymer film and cathode.

Selective laser etching or ablation for fabrication of devices

KAUST Repository

Buttner, Ulrich; Salama, Khaled N.; Sapsanis, Christos

2017-01-01

Methods of fabricating devices vial selective laser etching are provided. The methods can include selective laser etching of a portion of a metal layer, e.g. using a laser light source having a wavelength of 1,000 nm to 1,500 nm. The methods can

Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

KAUST Repository

Alhashim, Hala H.; Khan, Mohammed Zahed Mustafa; Majid, Mohammed Abdul; Ng, Tien Khee; Ooi, Boon S.

2015-01-01

Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting

Guiding of Long-Distance Electric Discharges by Combined Femtosecond and Nanosecond Pulses Emitted by Hybrid KrF Laser System

Science.gov (United States)

2014-01-30

laser pulse initiated HV discharge with a time delay of tens nanoseconds – evidently it is developing due to an avalanche -like growth of electron...AFRL-AFOSR-UK-TR-2014-0040 Guiding of long-distance electric discharges by combined femtosecond and nanosecond pulses emitted by...and guiding electric discharge , KrF laser, femtosecond pulse , nanosecond pulse , filamentation, plasma channel, lightning control, laser control of

Longitudinal studies on the microcirculation around the TheraCyte immunoisolation device, using the laser Doppler technique.

Science.gov (United States)

Rafael, E; Gazelius, B; Wu, G S; Tibell, A

2000-01-01

Encapsulation of cellular grafts in an immunoisolation membrane device may make it possible to perform transplantation without having to give immunosuppressive drugs. A common problem is the development of an avascular fibrotic zone around the implants, leading to impaired graft survival. The TheraCyte macroencapsulation device has therefore been designed to facilitate neovascularization of the device's surface. In this study, we evaluated the microcirculation around empty TheraCyte devices implanted SC in rats at various times after implantation, using a laser Doppler probe introduced via the device port. Studies were performed on day 1 or at 1, 2, and 4 weeks or at 2, 3, and 12 months after implantation. The mean flow was 158+/-42, 148+/-50, 133+/-28, 72+/-17, 138+/-41, 165+/-43, and 160+/-29 perfusion units (PU), respectively. Thus, the microcirculation around the device was significantly reduced at 4 weeks after implantation (p TheraCyte macroencapsulation devices that agree with our previous microdialysis studies on in vivo exchange of insulin and glucose between the device and the circulation. Laser Doppler flowmetry seems to provide a reliable technique for screening blood perfusion around macroencapsulation devices.

1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area

Energy Technology Data Exchange (ETDEWEB)

Miah, M. J., E-mail: jarez.miah@tu-berlin.de; Posilovic, K.; Kalosha, V. P.; Rosales, R.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Kettler, T. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); PBC Lasers GmbH, Hardenbergstr. 36, 10623 Berlin (Germany); Skoczowsky, D. [PBC Lasers GmbH, Hardenbergstr. 36, 10623 Berlin (Germany); Pohl, J.; Weyers, M. [Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

2014-10-13

High-brightness edge-emitting semiconductor lasers having a vertically extended waveguide structure emitting in the 1060 nm range are investigated. Ridge waveguide (RW) lasers with 9 μm stripe width and 2.64 mm cavity length yield highest to date single transverse mode output power for RW lasers in the 1060 nm range. The lasers provide 1.9 W single transverse mode optical power under continuous-wave (cw) operation with narrow beam divergences of 9° in lateral and 14° (full width at half maximum) in vertical direction. The beam quality factor M{sup 2} is less than 1.9 up to 1.9 W optical power. A maximum brightness of 72 MWcm{sup −2}sr{sup −1} is obtained. 100 μm wide and 3 mm long unpassivated broad area lasers provide more than 9 W optical power in cw operation.

High modulation bandwidth of a light-emitting diode with surface plasmon coupling (Conference Presentation)

Science.gov (United States)

Lin, Chun-Han; Tu, Charng-Gan; Yao, Yu-Feng; Chen, Sheng-Hung; Su, Chia-Ying; Chen, Hao-Tsung; Kiang, Yean-Woei; Yang, Chih-Chung

2017-02-01

Besides lighting, LEDs can be used for indoor data transmission. Therefore, a large modulation bandwidth becomes an important target in the development of visible LED. In this regard, enhancing the radiative recombination rate of carriers in the quantum wells of an LED is a useful method since the modulation bandwidth of an LED is related to the carrier decay rate besides the device RC time constant To increase the carrier decay rate in an LED without sacrificing its output power, the technique of surface plasmon (SP) coupling in an LED is useful. In this paper, the increases of modulation bandwidth by reducing mesa size, decreasing active layer thickness, and inducing SP coupling in blue- and green-emitting LEDs are illustrated. The results are demonstrated by comparing three different LED surface structures, including bare p-type surface, GaZnO current spreading layer, and Ag nanoparticles (NPs) for inducing SP coupling. In a single-quantum-well, blue-emitting LED with a circular mesa of 10 microns in radius, SP coupling results in a modulation bandwidth of 528.8 MHz, which is believed to be the record-high level. A smaller RC time constant can lead to a higher modulation bandwidth. However, when the RC time constant is smaller than 0.2 ns, its effect on modulation bandwidth saturates. The dependencies of modulation bandwidth on injected current density and carrier decay time confirm that the modulation bandwidth is essentially inversely proportional to a time constant, which is inversely proportional to the square-root of carrier decay rate and injected current density.

Study on scalable Coulombic degradation for estimating the lifetime of organic light-emitting devices

International Nuclear Information System (INIS)

Zhang Wenwen; Hou Xun; Wu Zhaoxin; Liang Shixiong; Jiao Bo; Zhang Xinwen; Wang Dawei; Chen Zhijian; Gong Qihuang

2011-01-01

The luminance decays of organic light-emitting diodes (OLEDs) are investigated with initial luminance of 1000 to 20 000 cd m -2 through a scalable Coulombic degradation and a stretched exponential decay. We found that the estimated lifetime by scalable Coulombic degradation deviates from the experimental results when the OLEDs work with high initial luminance. By measuring the temperature of the device during degradation, we found that the higher device temperatures will lead to instabilities of organic materials in devices, which is expected to result in the difference between the experimental results and estimation using the scalable Coulombic degradation.

Practical silicon Light emitting devices fabricated by standard IC technology

International Nuclear Information System (INIS)

Aharoni, H.; Monuko du Plessis; Snyman, L.W.

2004-01-01

Full Text:Research activities are described with regard to the development of a comprehensive approach for the practical realization of single crystal Silicon Light Emitting Devices (Si-LEDs). Several interesting suggestions for the fabrication of such devices were made in the literature but they were not adopted by the semiconductor industry because they involve non-standard fabrication schemes, requiring special production lines. Our work presents an alternative approach, proposed and realized in practice by us, permitting the fabrication of Si-LEDs using the standard conventional fully industrialized IC technology ''as is'' without any adaptation. It enables their fabrication in the same production lines of the presently existing IC industry. This means that Si-LEDs can now be fabricated simultaneously with other components, such as transistors, on the same silicon chip, using the same masks and processing procedures. The result is that the yield, reliability, and price of the above Si-LEDs are the same as the other Si devices integrated on the same chip. In this work some structural details of several practical Si-LED's designed by us, as well as experimental results describing their performance are presented. These Si-LED's were fabricated to our specifications utilizing standard CMOS/BiCMOS technology, a fact which comprises an achievement by itself. The structure of the Si-LED's, is designed according to specifications such as the required operating voltage, overall light output intensity, its dependence(linear, or non-linear) on the input signal (voltage or current), light generations location (bulk, or near-surface), the emission pattern and uniformity. Such structural design present a problem since the designer can not use any structural parameters (such as doping levels and junction depths for example) but only those which already exist in the production lines. Since the fabrication procedures in these lines are originally designed for processing of

Laser surface modification of PEEK

Energy Technology Data Exchange (ETDEWEB)

Riveiro, A., E-mail: ariveiro@uvigo.es [Applied Physics Department, University of Vigo ETSII, Lagoas-Marcosende, 9, Vigo 36310 (Spain); Centro Universitario de la Defensa, Escuela Naval Militar, Plaza de Espana 2, 36920 Marin (Spain); Soto, R.; Comesana, R.; Boutinguiza, M.; Val, J. del; Quintero, F.; Lusquinos, F.; Pou, J. [Applied Physics Department, University of Vigo ETSII, Lagoas-Marcosende, 9, Vigo 36310 (Spain)

2012-09-15

Highlights: Black-Right-Pointing-Pointer Role of laser irradiation wavelength on the surface modification of PEEK (polyether-ether-ketone) was investigated. Black-Right-Pointing-Pointer Adequate processing conditions to improve wettability, roughness, and cell adhesion characteristics are determined. Black-Right-Pointing-Pointer A design of experiments (DOE) methodology was performed. Black-Right-Pointing-Pointer UV (355 nm) radiation is the most promising laser radiation for improving the adhesive surface properties of PEEK. - Abstract: Polyether-ether-ketone (PEEK) is a synthetic thermoplastic polymer with excellent mechanical and chemical properties, which make it attractive for the field of reconstructive surgery. Nevertheless, this material has a poor interfacial biocompatibility due to its large chemical stability which induces poor adhesive bonding properties. The possibilities of enhancing the PEEK adhesive properties by laser treatments have been explored in the past. This paper presents a systematic approach to discern the role of laser irradiation wavelength on the surface modification of PEEK under three laser wavelengths ({lambda} = 1064, 532, and 355 nm) with the aim to determine the most adequate processing conditions to increase the roughness and wettability, the main parameters affecting cell adhesion characteristics of implants. Overall results show that the ultraviolet ({lambda} = 355 nm) laser radiation is the most suitable one to enhance surface wettability of PEEK.

Dual functions of a new n-type conjugated dendrimer: light-emitting material and additive for polymer electroluminescent devices

International Nuclear Information System (INIS)

Park, Jong Hyeok; Kim, Chulhee; Kim, Young Chul

2009-01-01

We demonstrate a novel light-emitting diode (LED) of a graded bilayer structure that comprises poly(N-vinylcarbazole) (PVK) with good hole transport ability as the energy donor and a new distyrylanthracene-triazine-based dendrimer with enhanced electron transport ability as the light-emitting molecule. The device contains a graded bilayer structure of the PVK film covered with the dendrimer film prepared by sequential spin-casting of the dendrimer layer from a solvent that only swells the PVK layer. The bilayer device demonstrated a significantly enhanced electoluminescence quantum efficiency compared with the dendrimer single layer device or the PVK : dendrimer blend device with optimized composition. We also prepared composite LEDs with an MEH-PPV : emissive dendrimer blend. By doping the electron-deficient MEH-PPV layer with a small amount of the distyrylanthracene-triazine-based dendrimer, we could not only enhance the device performance but also depress the long-wavelength emission of MEH-PPV.

Dual functions of a new n-type conjugated dendrimer: light-emitting material and additive for polymer electroluminescent devices

Energy Technology Data Exchange (ETDEWEB)

Park, Jong Hyeok [Department of Chemical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Chulhee [Hyperstructured Organic Materials Research Center, Department of Polymer Science and Engineering, Inha University, Incheon 402-751 (Korea, Republic of); Kim, Young Chul, E-mail: kimyc@khu.ac.k [Department of Chemical Engineering and RIC-CAMID, Kyung Hee University, Yongin-si, Kyunggi-do 499-701 (Korea, Republic of)

2009-02-07

We demonstrate a novel light-emitting diode (LED) of a graded bilayer structure that comprises poly(N-vinylcarbazole) (PVK) with good hole transport ability as the energy donor and a new distyrylanthracene-triazine-based dendrimer with enhanced electron transport ability as the light-emitting molecule. The device contains a graded bilayer structure of the PVK film covered with the dendrimer film prepared by sequential spin-casting of the dendrimer layer from a solvent that only swells the PVK layer. The bilayer device demonstrated a significantly enhanced electoluminescence quantum efficiency compared with the dendrimer single layer device or the PVK : dendrimer blend device with optimized composition. We also prepared composite LEDs with an MEH-PPV : emissive dendrimer blend. By doping the electron-deficient MEH-PPV layer with a small amount of the distyrylanthracene-triazine-based dendrimer, we could not only enhance the device performance but also depress the long-wavelength emission of MEH-PPV.

Dual functions of a new n-type conjugated dendrimer: light-emitting material and additive for polymer electroluminescent devices

Science.gov (United States)

Hyeok Park, Jong; Kim, Chulhee; Kim, Young Chul

2009-02-01

We demonstrate a novel light-emitting diode (LED) of a graded bilayer structure that comprises poly(N-vinylcarbazole) (PVK) with good hole transport ability as the energy donor and a new distyrylanthracene-triazine-based dendrimer with enhanced electron transport ability as the light-emitting molecule. The device contains a graded bilayer structure of the PVK film covered with the dendrimer film prepared by sequential spin-casting of the dendrimer layer from a solvent that only swells the PVK layer. The bilayer device demonstrated a significantly enhanced electoluminescence quantum efficiency compared with the dendrimer single layer device or the PVK : dendrimer blend device with optimized composition. We also prepared composite LEDs with an MEH-PPV : emissive dendrimer blend. By doping the electron-deficient MEH-PPV layer with a small amount of the distyrylanthracene-triazine-based dendrimer, we could not only enhance the device performance but also depress the long-wavelength emission of MEH-PPV.

Highly efficient tandem organic light-emitting devices employing an easily fabricated charge generation unit

Science.gov (United States)

Yang, Huishan; Yu, Yaoyao; Wu, Lishuang; Qu, Biao; Lin, Wenyan; Yu, Ye; Wu, Zhijun; Xie, Wenfa

2018-02-01

We have realized highly efficient tandem organic light-emitting devices (OLEDs) employing an easily fabricated charge generation unit (CGU) combining 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile with ultrathin bilayers of CsN3 and Al. The charge generation and separation processes of the CGU have been demonstrated by studying the differences in the current density-voltage characteristics of external-carrier-excluding devices. At high luminances of 1000 and 10000 cd/m2, the current efficiencies of the phosphorescent tandem device are about 2.2- and 2.3-fold those of the corresponding single-unit device, respectively. Simultaneously, an efficient tandem white OLED exhibiting high color stability and warm white emission has also been fabricated.

Gas dynamic laser device

International Nuclear Information System (INIS)

Born, G.

1975-01-01

The gas dynamic laser device is provided with an expansion chamber arranged between a heating chamber for the CO-gas and the resonance chamber. The expansion chamber is initially evacuated for producing a rarefaction wave. Between the heating chamber and the expansion chamber there are arranged rapid release means such as a valve or a diaphragm. Pressure recovering means are connected to the other side of the resonance chamber

Green Fluorescent Organic Light Emitting Device with High Luminance

Directory of Open Access Journals (Sweden)

Ning YANG

2014-06-01

Full Text Available In this work, we fabricated the small molecule green fluorescent bottom-emission organic light emitting device (OLED with the configuration of glass substrate/indium tin oxide (ITO/Copper Phthalocyanine (CuPc 25 nm/ N,N’-di(naphthalen-1-yl-N,N’-diphenyl-benzidine (NPB 45 nm/ tris(8-hydroxyquinoline aluminium (Alq3 60 nm/ Lithium fluoride (LiF 1 nm/Aluminum (Al 100 nm where CuPc and NPB are the hole injection layer and the hole transport layer, respectively. CuPc is introduced in this device to improve carrier injection and efficiency. The experimental results indicated that the turn-on voltage is 2.8 V with a maximum luminance of 23510 cd/m2 at 12 V. The maximum current efficiency and power efficiency are 4.8 cd/A at 100 cd/m2 and 4.2 lm/W at 3 V, respectively. The peak of electroluminance (EL spectrum locates at 530 nm which is typical emission peak of green light. In contrast, the maximum current efficiency and power efficiency of the device without CuPc are only 4.0 cd/A at 100 mA/cm2 and 4.2 lm/W at 3.6 V, respectively.

Bigger, Brighter, Bluer-Better?Current light-emitting devices- adverse sleep properties and preventative strategies.

Directory of Open Access Journals (Sweden)

Paul eGringras

2015-10-01

Full Text Available ObjectiveIn an effort to enhance the efficiency, brightness and contrast of light-emitting (LE devices during the day, displays often generate substantial short-wavelength (blue-enriched light emissions that can adversely affect sleep. We set out to verify the extent of such short-wavelength emissions, produced by a tablet (iPad Air, e-reader (Kindle Paperwhite 1st generation and smartphone (iPhone 5s and to determine the impact of strategies designed to reduce these light emissions. SettingUniversity of Surrey dedicated chronobiology facility.MethodsFirstly, the spectral power of all the light-emitting (LE devices was assessed when displaying identical text. Secondly, we compared the text output with that of ‘Angry Birds’-a popular top 100 ‘App Store’ game. Finally we measured the impact of two strategies that attempt to reduce the output of short-wavelength light emissions. The first strategy employed an inexpensive commercially available pair of orange-tinted ‘blue-blocking’ glasses. The second tested an app designed to be ‘sleep-aware’ whose designers deliberately attempted to reduce blue-enriched light emissions.ResultsAll the LE devices shared very similar enhanced blue-light peaks when displaying text. This included the output from the backlit Kindle Paperwhite device. The spectra when comparing text to the Angry Birds game were also very similar, although the

Evaluation of Wear on Macro-Surface Textures Generated by ns Fiber Laser

Science.gov (United States)

Harish, V.; Soundarapandian, S.; Vijayaraghavan, L.; Bharatish, A.

2018-03-01

The demand for improved performance and long term reliability of mechanical systems dictate the use of advanced materials and surface engineering techniques. A small change in the surface topography can lead to substantial improvements in the tribological behaviour of the contact surfaces. One way of altering the surface topography is by surface texturing by introducing dimples or channels on the surfaces. Surface texturing is already a successful technique which finds a wide area of applications ranging from heavy industries to small scale devices. This paper reports the effect of macro texture shapes generated using a nanosecond fiber laser on wear of high carbon chromium steel used in large size bearings having rolling contacts. Circular and square shaped dimples were generated on the surface to assess the effect of sliding velocities on friction coefficient. Graphite was used as solid lubricant to minimise the effect of wear on textured surfaces. The laser parameters such as power, scan speed and passes were optimised to obtain macro circular and square dimples which was characterised using a laser confocal microscope. The friction coefficients of the circular and square dimples were observed to lie in the same range due to minimum wear on the surface. On the contrary, at medium and higher sliding velocities, square dimples exhibited lower friction coefficient values compared to circular dimples. The morphology of textured specimen was characterised using Scanning Electron Microscope.

Tight control of light trapping in surface addressable photonic crystal membranes: application to spectrally and spatially selective optical devices (Conference Presentation)

Science.gov (United States)

Letartre, Xavier; Blanchard, Cédric; Grillet, Christian; Jamois, Cécile; Leclercq, Jean-Louis; Viktorovitch, Pierre

2016-04-01

Surface addressable Photonic Crystal Membranes (PCM) are 1D or 2D photonic crystals formed in a slab waveguides where Bloch modes located above the light line are exploited. These modes are responsible for resonances in the reflection spectrum whose bandwidth can be adjusted at will. These resonances result from the coupling between a guided mode of the membrane and a free-space mode through the pattern of the photonic crystal. If broadband, these structures represent an ideal mirror to form compact vertical microcavity with 3D confinement of photons and polarization selectivity. Among numerous devices, low threshold VCSELs with remarkable and tunable modal properties have been demonstrated. Narrow band PCMs (or high Q resonators) have also been extensively used for surface addressable optoelectronic devices where an active material is embedded into the membrane, leading to the demonstration of low threshold surface emitting lasers, nonlinear bistables, optical traps... In this presentation, we will describe the main physical rules which govern the lifetime of photons in these resonant modes. More specifically, it will be emphasized that the Q factor of the PCM is determined, to the first order, by the integral overlap between the electromagnetic field distributions of the guided and free space modes and of the dielectric periodic perturbation which is applied to the homogeneous membrane to get the photonic crystal. It turns out that the symmetries of these distributions are of prime importance for the strength of the resonance. It will be shown that, by molding in-plane or vertical symmetries of Bloch modes, spectrally and spatially selective light absorbers or emitters can be designed. First proof of concept devices will be also presented.

Passivation layer breakdown during laser-fired contact formation for photovoltaic devices

International Nuclear Information System (INIS)

Raghavan, A.; DebRoy, T.; Palmer, T. A.

2014-01-01

Low resistance laser-fired ohmic contacts (LFCs) can be formed on the backside of Si-based solar cells using microsecond pulses. However, the impact of these longer pulse durations on the dielectric passivation layer is not clear. Retention of the passivation layer during processing is critical to ensure low recombination rates of electron-hole pairs at the rear surface of the device. In this work, advanced characterization tools are used to demonstrate that although the SiO 2 passivation layer melts directly below the laser, it is well preserved outside the immediate LFC region over a wide range of processing parameters. As a result, low recombination rates at the passivation layer/wafer interface can be expected despite higher energy densities associated with these pulse durations.

Laser deposition of resonant silicon nanoparticles on perovskite for photoluminescence enhancement

Science.gov (United States)

Tiguntseva, E. Y.; Zalogina, A. S.; Milichko, V. A.; Zuev, D. A.; Omelyanovich, M. M.; Ishteev, A.; Cerdan Pasaran, A.; Haroldson, R.; Makarov, S. V.; Zakhidov, A. A.

2017-11-01

Hybrid lead halide perovskite based optoelectronics is a promising area of modern technologies yielding excellent characteristics of light emitting diodes and lasers as well as high efficiencies of photovoltaic devices. However, the efficiency of perovskite based devices hold a potential of further improvement. Here we demonstrate high photoluminescence efficiency of perovskites thin films via deposition of resonant silicon nanoparticles on their surface. The deposited nanoparticles have a number of advances over their plasmonic counterparts, which were applied in previous studies. We show experimentally the increase of photoluminescence of perovskite film with the silicon nanoparticles by 150 % as compared to the film without the nanoparticles. The results are supported by numerical calculations. Our results pave the way to high throughput implementation of low loss resonant nanoparticles in order to create highly effective perovskite based optoelectronic devices.

Impurity studies in fusion devices using laser-fluorescence-spectroscopy

International Nuclear Information System (INIS)

Husinsky, W.R.

1980-08-01

Resonance fluorescence excitation of neutral atoms using tunable radiation from dye lasers offers a number of unique advantages for impurity studies in fusion devices. Using this technique, it is possible to perform local, time-resolved measurements of the densities and velocity distributions of metallic impurities in fusion devices without disturbing the plasma. Velocities are measured by monitoring the fluorescence intensity while tuning narrow bandwidth laser radiation through the Doppler - broadened absorbtion spectrum of the transition. The knowledge of the velocity distribution of neutral impurities is particularly useful for the determination of impurity introduction mechanisms. The laser fluorescence technique will be described in terms of its application to metallic impurities in fusion devices and related laboratory experiments. Particular attention will be given to recent results from the ISX-B tokamak using pulsed dye lasers where detection sensitivities for neutral Fe of 10 6 atoms/cm 3 with a velocity resolution of 600 m/sec (0.1 eV) have been achieved. Techniques for exciting plasma particles (H,D) will also be discussed

A high-energy, low-threshold tunable intracavity terahertz-wave parametric oscillator with surface-emitted configuration

International Nuclear Information System (INIS)

Wang, Y Y; Xu, D G; Jiang, H; Zhong, K; Yao, J Q

2013-01-01

A high-energy, low-threshold THz-wave output has been experimentally demonstrated with an intracavity terahertz-wave parametric oscillator based on a surface-emitted configuration, which was pumped by a diode-side-pumped Q-switched Nd:YAG laser. Different beam sizes and repetition rates of the pump light have been investigated for high-energy and high-efficiency THz-wave generation. The maximum THz-wave output energy of 283 nJ/pulse was obtained at 1.54 THz under an intracavity 1064 nm pump energy of 59 mJ. The conversion efficiency was 4.8 × 10 −6 , corresponding to a photon conversion efficiency of 0.088%. The pump threshold was 12.9 mJ/pulse. A continuously tunable range from 0.75 to 2.75 THz was realized. (paper)

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

KAUST Repository

Khan, Mohammed Zahed Mustafa; Ng, Tien Khee; Ooi, Boon S.

2014-01-01

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, advancement in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers and optical amplifiers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting and amplifying information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Subsequent achievements for lasers and amplifiers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. We herein reviewed the1 progress of both Qdots and Qdash devices, based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance. In particular, we discussed the progress in lasers, semiconductor optical amplifiers (SOA), mode locked lasers, and superluminescent diodes, which are the building

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

KAUST Repository

Khan, Mohammed Zahed Mustafa

2014-11-01

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, advancement in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers and optical amplifiers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting and amplifying information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Subsequent achievements for lasers and amplifiers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. We herein reviewed the1 progress of both Qdots and Qdash devices, based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance. In particular, we discussed the progress in lasers, semiconductor optical amplifiers (SOA), mode locked lasers, and superluminescent diodes, which are the building

Laser Surface Treatment of Sintered Alumina

Science.gov (United States)

Hagemann, R.; Noelke, C.; Kaierle, S.; Wesling, V.

Sintered alumina ceramics are used as refractory materials for industrial aluminum furnaces. In this environment the ceramic surface is in permanent contact with molten aluminum resulting in deposition of oxidic material on its surface. Consequently, a lower volume capacity as well as thermal efficiency of the furnaces follows. To reduce oxidic adherence of the ceramic material, two laser-based surface treatment processes were investigated: a powder- based single-step laser cladding and a laser surface remelting. Main objective is to achieve an improved surface quality of the ceramic material considering the industrial requirements as a high process speed.

Top emitting white OLEDs

Energy Technology Data Exchange (ETDEWEB)

Freitag, Patricia; Luessem, Bjoern; Leo, Karl [Technische Universitaet Dresden, Institut fuer Angewandte Photophysik, George-Baehr-Strasse 1, 01069 Dresden (Germany)

2009-07-01

Top emitting organic light emitting diodes (TOLEDs) provide a number of interesting opportunities for new applications, such as the opportunity to fabricate ITO-free devices by using opaque substrates. This makes it possible to manufacture low cost OLEDs for signage and lighting applications. A general top emitting device consists of highly reflecting metal contacts as anode and semitransparent cathode, the latter one for better outcouling reasons. In between several organic materials are deposited as charge transporting, blocking, and emission layers. Here, we show a top emitting white organic light emitting diode with silver electrodes arranged in a p-i-n structure with p- and n-doped charge transport layers. The centrical emission layer consists of two phosphorescent (red and green) and one fluorescent (blue) emitter systems separated by an ambipolar interlayer to avoid mutual exciton quenching. By adding an additional dielectric capping layer on top of the device stack, we achieve a reduction of the strong microcavity effects which appear due to the high reflection of both metal electrodes. Therefore, the outcoupled light shows broad and nearly angle-independent emission spectra, which is essential for white light emitting diodes.

Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors

KAUST Repository

Lee, Changmin; Shen, Chao; Cozzan, Clayton; Farrell, Robert M.; Speck, James S.; Nakamura, Shuji; Ooi, Boon S.; DenBaars, Steven P.

2017-01-01

Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021

Novel Cavities in Vertical External Cavity Surface Emitting Lasers for Emission in Broad Spectral Region by Means of Nonlinear Frequency Conversion

Science.gov (United States)

Lukowski, Michal L.

Optically pumped semiconductor vertical external cavity surface emitting lasers (VECSEL) were first demonstrated in the mid 1990's. Due to the unique design properties of extended cavity lasers VECSELs have been able to provide tunable, high-output powers while maintaining excellent beam quality. These features offer a wide range of possible applications in areas such as medicine, spectroscopy, defense, imaging, communications and entertainment. Nowadays, newly developed VECSELs, cover the spectral regions from red (600 nm) to around 5 microm. By taking the advantage of the open cavity design, the emission can be further expanded to UV or THz regions by the means of intracavity nonlinear frequency generation. The objective of this dissertation is to investigate and extend the capabilities of high-power VECSELs by utilizing novel nonlinear conversion techniques. Optically pumped VECSELs based on GaAs semiconductor heterostructures have been demonstrated to provide exceptionally high output powers covering the 900 to 1200 nm spectral region with diffraction limited beam quality. The free space cavity design allows for access to the high intracavity circulating powers where high efficiency nonlinear frequency conversions and wavelength tuning can be obtained. As an introduction, this dissertation consists of a brief history of the development of VECSELs as well as wafer design, chip fabrication and resonator cavity design for optimal frequency conversion. Specifically, the different types of laser cavities such as: linear cavity, V-shaped cavity and patented T-shaped cavity are described, since their optimization is crucial for transverse mode quality, stability, tunability and efficient frequency conversion. All types of nonlinear conversions such as second harmonic, sum frequency and difference frequency generation are discussed in extensive detail. The theoretical simulation and the development of the high-power, tunable blue and green VECSEL by the means of type I

Research on propane leak detection system and device based on mid infrared laser

Science.gov (United States)

Jiang, Meng; Wang, Xuefeng; Wang, Junlong; Wang, Yizhao; Li, Pan; Feng, Qiaoling

2017-10-01

Propane is a key component of liquefied petroleum gas (LPG) and crude oil volatile. This issue summarizes the recent progress of propane detection technology. Meanwhile, base on the development trend, our latest progress is also provided. We demonstrated a mid infrared propane sensor system, which is based on wavelength modulation spectroscopy (WMS) technique with a CW interband cascade laser (ICL) emitting at 3370.4nm. The ICL laser scanned over a sharp feature in the broader spectrum of propane, and harmonic signals are obtained by lock-in amplifier for gas concentration deduction. The surrounding gas is extracted into the fine optical absorption cell through the pump to realize online detection. The absorption cell is designed in mid infrared windows range. An example experimental setup is shown. The second harmonic signals 2f and first harmonic signals1f are obtained. We present the sensor performance test data including dynamic precision and temperature stability. The propane detection sensor system and device is portable can carried on the mobile inspection vehicle platforms or intelligent robot inspection platform to realize the leakage monitoring of whole oil gas tank area.

Colloidal quantum dot light-emitting devices

Directory of Open Access Journals (Sweden)

Vanessa Wood

2010-07-01

Full Text Available Colloidal quantum dot light-emitting devices (QD-LEDs have generated considerable interest for applications such as thin film displays with improved color saturation and white lighting with a high color rendering index (CRI. We review the key advantages of using quantum dots (QDs in display and lighting applications, including their color purity, solution processability, and stability. After highlighting the main developments in QD-LED technology in the past 15 years, we describe the three mechanisms for exciting QDs – optical excitation, Förster energy transfer, and direct charge injection – that have been leveraged to create QD-LEDs. We outline the challenges facing QD-LED development, such as QD charging and QD luminescence quenching in QD thin films. We describe how optical downconversion schemes have enabled researchers to overcome these challenges and develop commercial lighting products that incorporate QDs to achieve desirable color temperature and a high CRI while maintaining efficiencies comparable to inorganic white LEDs (>65 lumens per Watt. We conclude by discussing some current directions in QD research that focus on achieving higher efficiency and air-stable QD-LEDs using electrical excitation of the luminescent QDs.

Toward continuous-wave operation of organic semiconductor lasers

Science.gov (United States)

Sandanayaka, Atula S. D.; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya

2017-01-01

The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi–continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture. PMID:28508042

Alignment and focusing device for a multibeam laser system

International Nuclear Information System (INIS)

Sweatt, W.C.

1980-01-01

Large inertial confinement fusion laser systems have many beams focusing on a small target. The Antares system is a 24-beam CO 2 pulse laser. To produce uniform illumination, the 24 beams must be individually focused on (or near) the target's surface in a symmetric pattern. To assess the quality of a given beam, we will locate a Smartt (point diffraction) interferometer at the desired focal point and illuminate it with an alignment laser. The resulting fringe pattern shows defocus, lateral misalignment, and beam aberrations; all of which can be minimized by tilting and translating the focusing mirror and the preceding flat mirror. The device described in this paper will remotely translate the Smartt interferometer to any position in the target space and point it in any direction using a two-axis gimbal. The fringes produced by the interferometer are relayed out of the target vacuum shell to a vidicon by a train or prisms. We are designing four separate snap-in heads to mount on the gimbal; two of which are Smartt interferometers (for 10.6 μm and 633 nm) and two for pinholes, should we wish to put an alignment beam backwards through the system

III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

KAUST Repository

Detchprohm, T.

2016-11-05

The III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.

Ambient fabrication of flexible and large-area organic light-emitting devices using slot-die coating

DEFF Research Database (Denmark)

Sandstrom, Andreas; Dam, Henrik Friis; Krebs, Frederik C

2012-01-01

available in smartphones, but the promise of a continuous ambient fabrication has unfortunately not materialized yet, as organic light-emitting diodes invariably depend on the use of one or more time-and energy-consuming process steps under vacuum. Here we report an all-solution-based fabrication...... of an alternative emissive device, a light-emitting electrochemical cell, using a slot-die roll-coating apparatus. The fabricated flexible sheets exhibit bidirectional and uniform light emission, and feature a fault-tolerant >1-mu m-thick active material that is doped in situ during operation. It is notable...

Study on the GaAs(110) surface using emitted atom spectrometry

International Nuclear Information System (INIS)

Gayone, J.E.; Sanchez, E.A.; Grizzi, O.; Universidad Nacional de Cuyo, Mendoza

1998-01-01

The facilities implemented at Bariloche for the ion scattering spectrometry is described, and recent examples of the technique application to determine the atomic structure and the composition of metallic and semiconductor surfaces, pure and with different adsorbates. The surface analysis technique using emitted atom spectrometry is discussed. The sensitivity to the GaAs(110) surface atomic relaxation is presented, and the kinetic of hydrogen adsorption by the mentioned surface is studied

Mathematical modeling of a photovoltaic-laser energy converter for iodine laser radiation

Science.gov (United States)

Walker, Gilbert H.; Heinbockel, John H.

1987-01-01

Space-based laser power systems will require converters to change laser radiation into electricity. Vertical junction photovoltaic converters are promising devices for this use. A promising laser for the laser power station is the t-C4F9I laser which emits radiation at a wavelength of 1.315 microns. This paper describes the results of mathematical modeling of a photovoltaic-laser energy converter for use with this laser. The material for this photovoltaic converter is Ga(53)In(47)As which has a bandgap energy of 0.94 eV, slightly below the energy of the laser photons (0.943 eV). Results of a study optimizing the converter parameters are presented. Calculated efficiency for a 1000 vertical junction converter is 42.5 percent at a power density of 1 x 10 to the 3d power w/sq cm.

Device for frequency modulation of a laser output spectrum

Science.gov (United States)

Beene, J.R.; Bemis, C.E. Jr.

1984-07-17

A device is provided for fast frequency modulating the output spectrum of multimode lasers and single frequency lasers that are not actively stabilized. A piezoelectric transducer attached to a laser cavity mirror is driven in an unconventional manner to excite resonance vibration of the tranducer to rapidly, cyclicly change the laser cavity length. The result is a cyclic sweeping of the output wavelength sufficient to fill the gaps in the laser output frequency spectrum. When a laser is used to excite atoms or molecules, complete absorption line coverage is made possible.

Analysis of detection performance of multi band laser beam analyzer

Science.gov (United States)

Du, Baolin; Chen, Xiaomei; Hu, Leili

2017-10-01

Compared with microwave radar, Laser radar has high resolution, strong anti-interference ability and good hiding ability, so it becomes the focus of laser technology engineering application. A large scale Laser radar cross section (LRCS) measurement system is designed and experimentally tested. First, the boundary conditions are measured and the long range laser echo power is estimated according to the actual requirements. The estimation results show that the echo power is greater than the detector's response power. Secondly, a large scale LRCS measurement system is designed according to the demonstration and estimation. The system mainly consists of laser shaping, beam emitting device, laser echo receiving device and integrated control device. Finally, according to the designed lidar cross section measurement system, the scattering cross section of target is simulated and tested. The simulation results are basically the same as the test results, and the correctness of the system is proved.

Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

International Nuclear Information System (INIS)

Zhou, Shunliang; Wang, Qi; Li, Ming; Lu, Zhiyun; Yu, Junsheng

2014-01-01

Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C 2' ]iridium(III) (acetylacetonate) [(tbpbt) 2 Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt) 2 Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt) 2 Ir(acac) as a self-host orange emitter, indicating that (tbpbt) 2 Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized

Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

Energy Technology Data Exchange (ETDEWEB)

Zhou, Shunliang; Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

2014-10-15

Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(tbpbt){sub 2}Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt){sub 2}Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt){sub 2}Ir(acac) as a self-host orange emitter, indicating that (tbpbt){sub 2}Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized.

Cu−In−Ga−S quantum dot composition-dependent device performance of electrically driven light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Kim, Jong-Hoon; Lee, Ki-Heon; Jo, Dae-Yeon; Yang, Heesun, E-mail: hyang@hongik.ac.kr [Department of Materials Science and Engineering, Hongik University, Seoul 121-791 (Korea, Republic of); Lee, Yangjin; Hwang, Jun Yeon [Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeonbuk 565-905 (Korea, Republic of)

2014-09-29

Colloidal synthesis of ternary and quaternary quantum dots (QDs) of In/Ga ratio-varied Cu−In{sub 1−x}−Ga{sub x}−S (CIGS) with nominal x = 0, 0.5, 0.7, and 1 and their application for the fabrication of quantum dot-light-emitting diodes (QLEDs) are reported. Four QLEDs having CIGS QDs with different compositions are all solution-processed in the framework of multilayered structure, where QD emitting layer is sandwiched by hybrid charge transport layers of poly(9-vinlycarbazole) and ZnO nanoparticles. The device performance such as luminance and efficiency is found to be strongly dependent on the composition of CIGS QDs, and well interpreted by the device energy level diagram proposed through the determination of QD valence band minima by photoelectron emission spectroscopic measurement.

Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

International Nuclear Information System (INIS)

Wu, Jiang; Chen, Siming; Seeds, Alwyn; Liu, Huiyun

2015-01-01

Nanometre-scale semiconductor devices have been envisioned as next-generation technologies with high integration and functionality. Quantum dots, or the so-called ‘artificial atoms’, exhibit unique properties due to their quantum confinement in all 3D. These unique properties have brought to light the great potential of quantum dots in optoelectronic applications. Numerous efforts worldwide have been devoted to these promising nanomaterials for next-generation optoelectronic devices, such as lasers, photodetectors, amplifiers, and solar cells, with the emphasis on improving performance and functionality. Through the development in optoelectronic devices based on quantum dots over the last two decades, quantum dot devices with exceptional performance surpassing previous devices are evidenced. This review describes recent developments in quantum dot optoelectronic devices over the last few years. The paper will highlight the major progress made in 1.3 μm quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells. (topical review)

Flexible organic light-emitting device based on magnetron sputtered indium-tin-oxide on plastic substrate

International Nuclear Information System (INIS)

Wong, F.L.; Fung, M.K.; Tong, S.W.; Lee, C.S.; Lee, S.T.

2004-01-01

A radio-frequency sputtering deposition method was applied to prepare indium tin oxide (ITO) on a plastic substrate, polyethylene terephthalate (PET). The correlation of deposition conditions and ITO film properties was systematically investigated and characterized. The optimal ITO films had a transmittance of over 90% in the visible range (400-700 nm) and a resistivity of 5.0x10 -4 Ω-cm. Sequentially α-napthylphenylbiphenyl diamine, tris-(8-hydroxyquinoline) aluminium, and magnesium-silver were thermally deposited on the ITO-coated PET substrate to fabricate flexible organic light-emitting diodes (FOLEDs). The fabricated devices had a maximum current efficiency of ∼4.1 cd/A and a luminance of nearly 4100 cd/m 2 at 100 mA/cm 2 . These values showed that the FOLEDs had comparable performance characteristics with the conventional organic light-emitting diodes made on ITO-coated glasses with the same device configuration

Surface morphology of laser superheated Pb(100)

Energy Technology Data Exchange (ETDEWEB)

Zhang, Z.H.; Lin, B.; Elsayed-Ali, H.E.

1999-11-01

The change in the surface vacancy density after heating of Pb(100) with {approximately}100 ps laser pulses is investigated using reflection high-energy electron diffraction. The surface vacancy density remains unchanged when the surface is superheated without melting. However, when the laser fluence is high enough to cause surface melting, the surface vacancy density increases. This increase in vacancy density is attributed to fast diffusion of atoms in the liquid film formed on Pb(100) during laser melting.

Laser micromachining of biofactory-on-a-chip devices

Science.gov (United States)

Burt, Julian P.; Goater, Andrew D.; Hayden, Christopher J.; Tame, John A.

2002-06-01

Excimer laser micromachining provides a flexible means for the manufacture and rapid prototyping of miniaturized systems such as Biofactory-on-a-Chip devices. Biofactories are miniaturized diagnostic devices capable of characterizing, manipulating, separating and sorting suspension of particles such as biological cells. Such systems operate by exploiting the electrical properties of microparticles and controlling particle movement in AC non- uniform stationary and moving electric fields. Applications of Biofactory devices are diverse and include, among others, the healthcare, pharmaceutical, chemical processing, environmental monitoring and food diagnostic markets. To achieve such characterization and separation, Biofactory devices employ laboratory-on-a-chip type components such as complex multilayer microelectrode arrays, microfluidic channels, manifold systems and on-chip detection systems. Here we discuss the manufacturing requirements of Biofactory devices and describe the use of different excimer laser micromachined methods both in stand-alone processes and also in conjunction with conventional fabrication processes such as photolithography and thermal molding. Particular attention is given to the production of large area multilayer microelectrode arrays and the manufacture of complex cross-section microfluidic channel systems for use in simple distribution and device interfacing.