Ion Motion Stability in Asymmetric Surface Electrode Ion Traps

Science.gov (United States)

Shaikh, Fayaz; Ozakin, Arkadas

2010-03-01

Many recently developed designs of the surface electrode ion traps for quantum information processing have asymmetry built into their geometries. The asymmetry helps rotate the trap axes to angles with respect to electrode surface that facilitate laser cooling of ions but introduces a relative angle between the RF and DC fields and invalidates the classical stability analysis of the symmetric case for which the equations of motion are decoupled. For asymmetric case the classical motion of a single ion is given by a coupled, multi-dimensional version of Mathieu's equation. In this poster we discuss the stability diagram of asymmetric surface traps by performing an approximate multiple scale perturbation analysis of the coupled Mathieu equations, and validate the results with numerical simulations. After obtaining the stability diagram for the linear fields, we simulate the motion of an ion in a given asymmetric surface trap, utilizing a method-of-moments calculation of the electrode fields. We obtain the stability diagram and compare it with the ideal case to find the region of validity. Finally, we compare the results of our stability analysis to experiments conducted on a microfabricated asymmetric surface trap.

Hydration of excess electrons trapped in charge pockets on molecular surfaces

Science.gov (United States)

Jalbout, Abraham F.; Del Castillo, R.; Adamowicz, Ludwik

2007-01-01

In this work we strive to design a novel electron trap located on a molecular surface. The process of electron trapping involves hydration of the trapped electron. Previous calculations on surface electron trapping revealed that clusters of OH groups can form stable hydrogen-bonded networks on one side of a hydrocarbon surface (i.e. cyclohexane sheets), while the hydrogen atoms on the opposite side of the surface form pockets of positive charge that can attract extra negative charge. The excess electron density on such surfaces can be further stabilized by interactions with water molecules. Our calculations show that these anionic systems are stable with respect to vertical electron detachment (VDE).

Stability of marginally outer trapped surfaces and symmetries

Energy Technology Data Exchange (ETDEWEB)

Carrasco, Alberto; Mars, Marc, E-mail: acf@usal.e, E-mail: marc@usal.e [Facultad de Ciencias, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca (Spain)

2009-09-07

We study the properties of stable, strictly stable and locally outermost marginally outer trapped surfaces in spacelike hypersurfaces of spacetimes possessing certain symmetries such as isometries, homotheties and conformal Killings. We first obtain results for general diffeomorphisms in terms of the so-called metric deformation tensor and then particularize to different types of symmetries. In particular, we find restrictions at the surfaces on the vector field generating the symmetry. Some consequences are discussed. As an application, we present a result on non-existence of stable marginally outer trapped surfaces in slices of FLRW.

Technology for On-Chip Qubit Control with Microfabricated Surface Ion Traps

Energy Technology Data Exchange (ETDEWEB)

Highstrete, Clark [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Quantum Information Sciences Dept.; Scott, Sean Michael [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). RF/Optoelectronics Dept.; Nordquist, Christopher D. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). RF/Optoelectronics Dept.; Sterk, Jonathan David [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Photonic Microsystem Technologies Dept.; Maunz, Peter Lukas Wilhelm [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Photonic Microsystem Technologies Dept.; Tigges, Christopher P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Photonic Microsystem Technologies Dept.; Blain, Matthew Glenn [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Photonic Microsystem Technologies Dept.; Heller, Edwin J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Microsystems Integration Dept.; Stevens, James E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). MESAFab Operations 2 Dept.

2013-11-01

Trapped atomic ions are a leading physical system for quantum information processing. However, scalability and operational fidelity remain limiting technical issues often associated with optical qubit control. One promising approach is to develop on-chip microwave electronic control of ion qubits based on the atomic hyperfine interaction. This project developed expertise and capabilities at Sandia toward on-chip electronic qubit control in a scalable architecture. The project developed a foundation of laboratory capabilities, including trapping the ¹⁷¹Yb⁺ hyperfine ion qubit and developing an experimental microwave coherent control capability. Additionally, the project investigated the integration of microwave device elements with surface ion traps utilizing Sandia’s state-of-the-art MEMS microfabrication processing. This effort culminated in a device design for a multi-purpose ion trap experimental platform for investigating on-chip microwave qubit control, laying the groundwork for further funded R&D to develop on-chip microwave qubit control in an architecture that is suitable to engineering development.

Hydrogen treatment as a detergent of electronic trap states in lead chalcogenide nanoparticles

Science.gov (United States)

Voros, Marton; Brawand, Nicholas; Galli, Giulia

Lead chalcogenide (PbX) nanoparticles are promising materials for solar energy conversion. However, the presence of trap states in their electronic gap limits their usability, and developing a universal strategy to remove trap states is a persistent challenge. Using calculations based on density functional theory, we show that hydrogen acts as an amphoteric impurity on PbX nanoparticle surfaces; hydrogen atoms may passivate defects arising from ligand imbalance or off-stoichiometric surface terminations, irrespective of whether they originate from cation or anion excess. In addition, we show, using constrained density functional theory calculations, that hydrogen treatment of defective nanoparticles is also beneficial for charge transport in films. We also find that hydrogen adsorption on stoichiometric nanoparticles leads to electronic doping, preferentially n-type. Our findings suggest that post-synthesis hydrogen treatment of lead chalcogenide nanoparticle films is a viable approach to reduce electronic trap states or to dope well-passivated films. Work supported by the Center for Advanced Solar Photophysics, an Energy Frontier Research Center funded by the US Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences (NB) and U.S. DOE under Contract No. DE-AC02-06CH11357 (MV).

Localized and Extended States in a Disordered Trap

International Nuclear Information System (INIS)

Pezze, Luca; Sanchez-Palencia, Laurent

2011-01-01

We study Anderson localization in a disordered potential combined with an inhomogeneous trap. We show that the spectrum displays both localized and extended states, which coexist at intermediate energies. In the region of coexistence, we find that the extended states result from confinement by the trap and are weakly affected by the disorder. Conversely, the localized states correspond to eigenstates of the disordered potential, which are only affected by the trap via an inhomogeneous energy shift. These results are relevant to disordered quantum gases and we propose a realistic scheme to observe the coexistence of localized and extended states in these systems.

Trapping cold ground state argon atoms.

Science.gov (United States)

Edmunds, P D; Barker, P F

2014-10-31

We trap cold, ground state argon atoms in a deep optical dipole trap produced by a buildup cavity. The atoms, which are a general source for the sympathetic cooling of molecules, are loaded in the trap by quenching them from a cloud of laser-cooled metastable argon atoms. Although the ground state atoms cannot be directly probed, we detect them by observing the collisional loss of cotrapped metastable argon atoms and determine an elastic cross section. Using a type of parametric loss spectroscopy we also determine the polarizability of the metastable 4s[3/2](2) state to be (7.3±1.1)×10(-39)  C m(2)/V. Finally, Penning and associative losses of metastable atoms in the absence of light assisted collisions, are determined to be (3.3±0.8)×10(-10)  cm(3) s(-1).

Geometric Phases for Mixed States in Trapped Ions

International Nuclear Information System (INIS)

Lu Hongxia

2006-01-01

The generalization of geometric phase from the pure states to the mixed states may have potential applications in constructing geometric quantum gates. We here investigate the mixed state geometric phases and visibilities of the trapped ion system in both non-degenerate and degenerate cases. In the proposed quantum system, the geometric phases are determined by the evolution time, the initial states of trapped ions, and the initial states of photons. Moreover, special periods are gained under which the geometric phases do not change with the initial states changing of photon parts in both non-degenerate and degenerate cases. The high detection efficiency in the ion trap system implies that the mixed state geometric phases proposed here can be easily tested.

New examples of marginally trapped surfaces and tubes in warped spacetimes

International Nuclear Information System (INIS)

Flores, J L; Haesen, S; Ortega, M

2010-01-01

In this paper we provide new examples of marginally trapped surfaces and tubes in FLRW spacetimes by using a basic relation between these objects and CMC surfaces in 3-manifolds. We also provide a new method to construct marginally trapped surfaces in closed FLRW spacetimes, which is based on the classical Hopf map. The utility of this method is illustrated by providing marginally trapped surfaces crossing the expanding and collapsing regions of a closed FLRW spacetime. The approach introduced in this paper is also extended to twisted spaces.

The surface emissions trap: a new approach in indoor air purification.

Science.gov (United States)

Markowicz, Pawel; Larsson, Lennart

2012-11-01

A new device for stopping or reducing potentially irritating or harmful emissions from surfaces indoors is described. The device is a surface emissions trap prototype and consists of an adsorbent sheet with a semipermeable barrier surrounded by two thin nonwoven layers. The trap may be applied directly at the source of the emissions e.g. at moisture-affected floors and walls, surfaces contaminated by chemical spills etc. This results in an immediate stop or reduction of the emitting pollutants. The trap has a very low water vapor resistance thus allowing drying of wet surfaces. In laboratory experiments typically 98% reduction of air concentrations of volatile organic compounds and a virtually total reduction of mold particle-associated mycotoxins was observed. The surface emissions trap may represent a convenient and efficient way of restoring indoor environments polluted by microbial and other moisture-associated emissions. Copyright © 2012 Elsevier B.V. All rights reserved.

Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

International Nuclear Information System (INIS)

Zhu Qing; Ma Xiao-Hua; Chen Wei-Wei; Hou Bin; Zhu Jie-Jie; Zhang Meng; Chen Li-Xiang; Cao Yan-Rong; Hao Yue

2016-01-01

Deep level transient spectroscopy (DLTS) as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors (HEMTs) has been widely utilized. The DLTS measurements under different bias conditions are carried out in this paper. Two hole-like traps with active energies of E v + 0.47 eV, and E v + 0.10 eV are observed, which are related to surface states. The electron traps with active energies of E c − 0.56 eV are located in the channel, those with E c − 0.33 eV and E c − 0.88 eV are located in the AlGaN layer. The presence of surface states has a strong influence on the detection of electron traps, especially when the electron traps are low in density. The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state. (paper)

Surface trapping phenomena in thermionic emission generating l/f noise

International Nuclear Information System (INIS)

Stepanescu, A.

1975-01-01

A general expression of the power spectrum of''flicker noise'', involving stochastic trapping phenomena and calculated on the basis of a two parameter model, is applied in the case of thermoionic emission from cathode surface. The fluctuation of the work function over the cathode surface is interpreted as being due to a trapping process of foreign atoms by the cathode. Taking into account the very physical nature of the trapping mechanism, under self-consistent assumptions, a 1/f power spectrum is obtained in a certain range of frequency. The two parameter model removes some discrepancies involved in the preceding theories. (author)

Characterization of nonequilibrium states of trapped Bose–Einstein condensates

Science.gov (United States)

Yukalov, V. I.; Novikov, A. N.; Bagnato, V. S.

2018-06-01

The generation of different nonequilibrium states in trapped Bose–Einstein condensates is studied by numerically solving the nonlinear Schrödinger equation. Inducing nonequilibrium states by shaking a trap creates the following states: weak nonequilibrium, the state of vortex germs, the state of vortex rings, the state of straight vortex lines, the state of deformed vortices, vortex turbulence, grain turbulence, and wave turbulence. A characterization of nonequilibrium states is advanced by introducing effective temperature, Fresnel number, and Mach number.

Scheme for teleportation of unknown states of trapped ion

Institute of Scientific and Technical Information of China (English)

Chen Mei-Feng; Ma Song-She

2008-01-01

A scheme is presented for teleporting an unknown state in a trapped ion system.The scheme only requires a single laser beam.It allows the trap to be in any state with a few phonons,e.g.a thermal motion.Furthermore,it works in the regime,where the Rabi frequency of the laser is on the order of the trap frequency.Thus,the teleportation speed is greatly increased,which is important for decreasing the decoherence effect.This idea can also be used to teleport an unknown ionic entangled state.

Surface Traps in Colloidal Quantum Dot Solar Cells, their Mitigation and Impact on Manufacturability

KAUST Repository

Kirmani, Ahmad R.

2017-07-30

Colloidal quantum dots (CQDs) are potentially low-cost, solution-processable semiconductors which are endowed, through their nanoscale dimensions, with strong absorption, band gap tunability, high dielectric constants and enhanced stability. CQDs are contenders as a standalone PV technology as well as a potential back layer for augmenting established photovoltaic (PV) technologies, such as Si. However, owing to their small size (ca. few nanometers), CQDs are prone to surface trap states that inhibit charge transport and threaten their otherwise wonderful optoelectronic properties. Surface traps have also, indirectly, impeded scalable and industry-compatible fabrication of these solar cells, as all of the reports, to date, have relied on spin-coating with sophisticated and tedious ligand exchange schemes, some of which need to be performed in low humidity environments. In this thesis, we posit that an in-depth understanding of the process-structure-property-performance relationship in CQDs can usher in fresh insights into the nature and origin of surface traps, lead to novel ways to mitigate them, and finally help achieve scalable fabrication. To this end, we probe the CQD surfaces and their interactions with process solvents, linkers, and ambient environment employing a suite of spectroscopic techniques. These fundamental insights help us develop facile chemical and physical protocols to mitigate surface traps such as solvent engineering, remote molecular doping, and oxygen doping, directly leading to better-performing solar cells. Our efforts finally culminate in the realization of >10% efficient, air-stable CQD solar cells scalably fabricated in an ambient environment of high, uncontrolled R.H. (50-65%). As-prepared solar cells fabricated in high humidity ambient conditions are found to underperform, however, an oxygen-doping recipe is devised to mitigate the moisture-induced surface traps and recover device performances. Importantly, these solar cells are

A Configurable Surface-Electrode Ion Trap Design for Quantum Information Processing

International Nuclear Information System (INIS)

Liu Wei; Chen Shu-Ming; Chen Ping-Xing; Wu Wei

2013-01-01

We propose a configurable surface-electrode ion trap design to alleviate the poor reusability of the existing traps. It can architecturally and electrically support 5 mainstream modes by design reuse, thus enhancing the trap reusability and reducing the experiment setup overhead. We also develop a corresponding simulation suite which can optimize trap geometries and calculate trap parameters to control the trapped ion's classic motion. According to our analytical and simulated results, the configurable design can serve as a unified platform for basic research of large-scale quantum information processing

Analysis of surface states in ZnO nanowire field effect transistors

International Nuclear Information System (INIS)

Shao, Ye; Yoon, Jongwon; Kim, Hyeongnam; Lee, Takhee; Lu, Wu

2014-01-01

Highlights: • The electron transport in ZnO nanowire FETs is space charged limited below a trap temperature. • Metallic contacts to ZnO nanowires exhibit non-linear behavior with a Schottky barrier height of ∼0.35 eV. • The surface state density is in the range of 1.04 × 10 10 –1.24 × 10 10 /cm 2 . • The trap activation energy is ∼0.26 eV. - Abstract: Nanowires (NWs) have attracted considerable interests for scaled electronic and optoelectronic device applications. However, NW based semiconductor devices normally suffer from surface states due to the existence of dangling bonds or surface reconstruction. Because of their large surface-to-volume ratio, surface states in NWs can easily affect the metallic contacts to NWs and electron transport in NW. Here, we present ZnO NW surface analysis by performing current–voltage characterization on ZnO NW Schottky barrier field effect transistors with different metal contacts (Ti, Al, Au) at both room temperature and cryogenic temperature. Our results show that three metal contacts are all Schottky contacts to ZnO NWs due to surface states. Our further study reveals: (a) the surface states related Schottky barrier height (SBH) can be extracted from a back to back Schottky diodes model and the SBH values are in the range of 0.34–0.37 eV for three metal contacts; (b) the trap activation energy determined from the Arrhenius plots of different Schottky metal contacts is in the range of 0.23–0.29 eV, which is oxygen vacancies related; and (c) based on the space-charge-limited model, the surface state density of ZnO NW is in the range of 1.04 × 10 10 –1.24 × 10 10 /cm 2

Asymmetric Penning trap coherent states

International Nuclear Information System (INIS)

Contreras-Astorga, Alonso; Fernandez, David J.

2010-01-01

By using a matrix technique, which allows to identify directly the ladder operators, the coherent states of the asymmetric Penning trap are derived as eigenstates of the appropriate annihilation operators. They are compared with those obtained through the displacement operator method.

Oxidative trends of TiO₂—hole trapping at anatase and rutile surfaces

DEFF Research Database (Denmark)

Zawadzki, Pawel; Laursen, Anders B.; Jacobsen, Karsten Wedel

2012-01-01

Understanding the nature of photogenerated carriers in a photocatalyst is central to understanding its photocatalytic performance. Based on density functional theory calculation we show that for TiO2, the most popular photo-catalyst, the electron hole self-trapping leads to band gap states which...... position is dependent on the type of surface termination. Such variations in hole state energies can lead to differences in photocatalytic activity among rutile and anatase surface facets. We find that the calculated hole state energies correlate with photo-deposition and photo-etching rates. We...

Dynamic Trap Formation and Elimination in Colloidal Quantum Dots

KAUST Repository

Voznyy, O.; Thon, S. M.; Ip, A. H.; Sargent, E. H.

2013-01-01

Using first-principles simulations on PbS and CdSe colloidal quantum dots, we find that surface defects form in response to electronic doping and charging of the nanoparticles. We show that electronic trap states in nanocrystals are dynamic entities, in contrast with the conventional picture wherein traps are viewed as stable electronic states that can be filled or emptied, but not created or destroyed. These traps arise from the formation or breaking of atomic dimers at the nanoparticle surface. The dimers' energy levels can reside within the bandgap, in which case a trap is formed. Fortunately, we are also able to identify a number of shallow-electron-affinity cations that stabilize the surface, working to counter dynamic trap formation and allowing for trap-free doping. © 2013 American Chemical Society.

Dynamic Trap Formation and Elimination in Colloidal Quantum Dots

KAUST Repository

Voznyy, O.

2013-03-21

Using first-principles simulations on PbS and CdSe colloidal quantum dots, we find that surface defects form in response to electronic doping and charging of the nanoparticles. We show that electronic trap states in nanocrystals are dynamic entities, in contrast with the conventional picture wherein traps are viewed as stable electronic states that can be filled or emptied, but not created or destroyed. These traps arise from the formation or breaking of atomic dimers at the nanoparticle surface. The dimers\\' energy levels can reside within the bandgap, in which case a trap is formed. Fortunately, we are also able to identify a number of shallow-electron-affinity cations that stabilize the surface, working to counter dynamic trap formation and allowing for trap-free doping. © 2013 American Chemical Society.

Self-trapping nature of Tl nanoclusters on the Si(111)-7x7 surface

International Nuclear Information System (INIS)

Hwang, C G; Kim, N D; Lee, G; Shin, S Y; Kim, J S; Chung, J W

2008-01-01

We have studied properties of thallium (Tl) nanoclusters formed on the Si(111)-7x7 surface at room temperature (RT) by utilizing photoemission spectroscopy (PES) and high-resolution electron-energy-loss spectroscopy (HREELS) combined with first principles calculations. Our PES data reveal that the surface states stemming from the Si substrate remain quite inert with Tl adsorption producing no Tl-induced state until saturation at Tl coverage θ=0.21 monolayers. Such a behavior, in sharp contrast with the extremely reactive surface states upon the formation of Na or Li nanoclusters, together with the presence of a unique Tl-induced loss peak in HREELS spectra suggests no strong Si-Tl bonding, and is well understood in terms of gradual filling of Si dangling bonds with increasing θ. Our calculation further indicates the presence of several metastable atomic structures of Tl nanoclusters at RT rapidly transforming from one to another faster than 10 10 flippings per second. We thus conclude that the highly mobile Tl atoms form self-trapped nanoclusters within the attractive basins of the Si substrate at RT with several metastable phases. The mobile and multi-phased nature of Tl nanoclusters not only accounts for all the existing experimental observations available at present, but also provides an example of self-trapping of atoms in a nanometre-scale region

Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

International Nuclear Information System (INIS)

Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Wei-Wei; Hao, Yue

2014-01-01

Trap states in Al 0.55 Ga 0.45 N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al 2 O 3 /Al 0.55 Ga 0.45 N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×10 13 eV −1 ·cm −2 . Al 2 O 3 gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs

Evaporative cooling of cold atoms in a surface trap

International Nuclear Information System (INIS)

Hammes, M.; Rychtarik, D.; Grimm, R.

2001-01-01

Full text: Trapping cold atom close to a surface is a promising route for attaining a two-dimensional quantum gas. We present our gravito-optical surface trap (LOST), which consists of a horizontal evanescent-wave atom mirror in combination with a blue-detuned hollow beam for transverse confinement. Optical pre-cooling based on inelastic reflections from the evanescent wave provides good starting conditions for subsequent evaporative cooling, which can be realized by ramping down the optical potentials of the trap. Already our preliminary experiments (performed at the MPI fuer Kernphysik in Heidelberg) show a 100-fold increase in phase-space density and temperature reduction to 300 nK. Substantial further improvements can be expected in our greatly improved set-up after the recent transfer of the experiment to Innsbruck. By eliminating heating processes, optimizing the evaporation ramp, polarizing the atoms and by using an additional far red-detuned laser beam we expect to soon reach the conditions of quantum degeneracy and/or two-dimensionality. (author)

Self-trapped states in proteins?

NARCIS (Netherlands)

Austin, R. H.; Xie, A. H.; van der Meer, L.; Shinn, M.; Neil, G.

2003-01-01

We show here that the temperature dependence of the amide I band of myoglobin shows evidence for a low-lying S-elf-trapped state at 6.15 mum. We have conducted a careful set of picosecond pump-probe experiments providing results as a function of temperature. and wavelength and show that this

Trapping cold ground state argon atoms for sympathetic cooling of molecules

OpenAIRE

Edmunds, P. D.; Barker, P. F.

2014-01-01

We trap cold, ground-state, argon atoms in a deep optical dipole trap produced by a build-up cavity. The atoms, which are a general source for the sympathetic cooling of molecules, are loaded in the trap by quenching them from a cloud of laser-cooled metastable argon atoms. Although the ground state atoms cannot be directly probed, we detect them by observing the collisional loss of co-trapped metastable argon atoms using a new type of parametric loss spectroscopy. Using this technique we als...

Trapping of diffusing particles by striped cylindrical surfaces. Boundary homogenization approach

Science.gov (United States)

Dagdug, Leonardo; Berezhkovskii, Alexander M.; Skvortsov, Alexei T.

2015-01-01

We study trapping of diffusing particles by a cylindrical surface formed by rolling a flat surface, containing alternating absorbing and reflecting stripes, into a tube. For an arbitrary stripe orientation with respect to the tube axis, this problem is intractable analytically because it requires dealing with non-uniform boundary conditions. To bypass this difficulty, we use a boundary homogenization approach which replaces non-uniform boundary conditions on the tube wall by an effective uniform partially absorbing boundary condition with properly chosen effective trapping rate. We demonstrate that the exact solution for the effective trapping rate, known for a flat, striped surface, works very well when this surface is rolled into a cylindrical tube. This is shown for both internal and external problems, where the particles diffuse inside and outside the striped tube, at three orientations of the stripe direction with respect to the tube axis: (a) perpendicular to the axis, (b) parallel to the axis, and (c) at the angle of π/4 to the axis. PMID:26093574

Asymptotic theory of dissipative trapped electron mode overlapping many rational surfaces

International Nuclear Information System (INIS)

Rogister, A.; Hasselberg, G.

1978-01-01

The two dimensional eigenvalue equation describing the dissipative trapped electron mode is solved exactly in the limit of the mode overlapping many rational surfaces using the Pogutse model for the magnetic field and the pitch angle collision operator. The trapped electron contribution to the growth rate decreases, with respect to the standard theory, by a factor of order Δ/chi sub(T) << 1 where chi sub(T) is the position of the turning point and Δ the distance between rational surfaces

Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors.

Science.gov (United States)

He, Tao; Wu, Yanfei; D'Avino, Gabriele; Schmidt, Elliot; Stolte, Matthias; Cornil, Jérôme; Beljonne, David; Ruden, P Paul; Würthner, Frank; Frisbie, C Daniel

2018-05-30

Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure-charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure-property relationships in organic semiconductors.

Effects of surface and interface traps on exciton and multi-exciton dynamics in core/shell quantum dots

Science.gov (United States)

Bozio, Renato; Righetto, Marcello; Minotto, Alessandro

2017-08-01

Exciton interactions and dynamics are the most important factors determining the exceptional photophysical properties of semiconductor quantum dots (QDs). In particular, best performances have been obtained for ingeniously engineered core/shell QDs. We have studied two factors entering in the exciton decay dynamics with adverse effects for the luminescence efficiency: exciton trapping at surface and interface traps, and non-radiative Auger recombination in QDs carrying either net charges or multiple excitons. In this work, we present a detailed study into the optical absorption, fluorescence dynamics and quantum yield, as well as ultrafast transient absorption properties of CdSe/CdS, CdSe/Cd0.5Zn0.5S, and CdSe/ZnS QDs as a function of shell thickness. It turns out that de-trapping processes play a pivotal role in determining steady state emission properties. By studying the excitation dependent photoluminescence quantum yields (PLQY) in different CdSe/CdxZn1-xS (x = 0, 0.5, 1) QDs, we demonstrate the different role played by hot and cold carrier trapping rates in determining fluorescence quantum yields. Finally, the use of global analysis allows us untangling the complex ultrafast transient absorption signals. Smoothing of interface potential, together with effective surface passivation, appear to be crucial factors in slowing down both Auger-based and exciton trapping recombination processes.

Photoluminescence, trap states and thermoluminescence decay ...

Indian Academy of Sciences (India)

Administrator

Photoluminescence, trap states and thermoluminescence decay process study of Ca2MgSi2O7 : Eu. 2+. , Dy. 3+ phosphor. RAVI SHRIVASTAVA*, JAGJEET KAUR, VIKAS DUBEY and BEENA JAYKUMAR. Govt. VYT PG Autonomous College, Durg 491 001, (C.G.) India. MS received 9 July 2013; revised 5 December 2013.

Ball-grid array architecture for microfabricated ion traps

Science.gov (United States)

Guise, Nicholas D.; Fallek, Spencer D.; Stevens, Kelly E.; Brown, K. R.; Volin, Curtis; Harter, Alexa W.; Amini, Jason M.; Higashi, Robert E.; Lu, Son Thai; Chanhvongsak, Helen M.; Nguyen, Thi A.; Marcus, Matthew S.; Ohnstein, Thomas R.; Youngner, Daniel W.

2015-05-01

State-of-the-art microfabricated ion traps for quantum information research are approaching nearly one hundred control electrodes. We report here on the development and testing of a new architecture for microfabricated ion traps, built around ball-grid array (BGA) connections, that is suitable for increasingly complex trap designs. In the BGA trap, through-substrate vias bring electrical signals from the back side of the trap die to the surface trap structure on the top side. Gold-ball bump bonds connect the back side of the trap die to an interposer for signal routing from the carrier. Trench capacitors fabricated into the trap die replace area-intensive surface or edge capacitors. Wirebonds in the BGA architecture are moved to the interposer. These last two features allow the trap die to be reduced to only the area required to produce trapping fields. The smaller trap dimensions allow tight focusing of an addressing laser beam for fast single-qubit rotations. Performance of the BGA trap as characterized with 40Ca+ ions is comparable to previous surface-electrode traps in terms of ion heating rate, mode frequency stability, and storage lifetime. We demonstrate two-qubit entanglement operations with 171Yb+ ions in a second BGA trap.

Ball-grid array architecture for microfabricated ion traps

International Nuclear Information System (INIS)

Guise, Nicholas D.; Fallek, Spencer D.; Stevens, Kelly E.; Brown, K. R.; Volin, Curtis; Harter, Alexa W.; Amini, Jason M.; Higashi, Robert E.; Lu, Son Thai; Chanhvongsak, Helen M.; Nguyen, Thi A.; Marcus, Matthew S.; Ohnstein, Thomas R.; Youngner, Daniel W.

2015-01-01

State-of-the-art microfabricated ion traps for quantum information research are approaching nearly one hundred control electrodes. We report here on the development and testing of a new architecture for microfabricated ion traps, built around ball-grid array (BGA) connections, that is suitable for increasingly complex trap designs. In the BGA trap, through-substrate vias bring electrical signals from the back side of the trap die to the surface trap structure on the top side. Gold-ball bump bonds connect the back side of the trap die to an interposer for signal routing from the carrier. Trench capacitors fabricated into the trap die replace area-intensive surface or edge capacitors. Wirebonds in the BGA architecture are moved to the interposer. These last two features allow the trap die to be reduced to only the area required to produce trapping fields. The smaller trap dimensions allow tight focusing of an addressing laser beam for fast single-qubit rotations. Performance of the BGA trap as characterized with 40 Ca + ions is comparable to previous surface-electrode traps in terms of ion heating rate, mode frequency stability, and storage lifetime. We demonstrate two-qubit entanglement operations with 171 Yb + ions in a second BGA trap

Symplectic tomography of nonclassical states of trapped ion

International Nuclear Information System (INIS)

Man'ko, O.

1996-03-01

The marginal distribution for two types of nonclassical states of trapped ion - for squeezed and correlated states and for squeezed even and odd coherent states (squeezed Schroedinger cat states) is studied. The obtained marginal distribution for the two types of states is shown to satisfy classical dynamical equation equivalent to standard quantum evolution equation for density matrix (wave function) derived in symplectic tomography scheme. (author). 20 refs

Hydrogen in trapping states innocuous to environmental degradation of high-strength steels

International Nuclear Information System (INIS)

Takai, Kenichi

2003-01-01

Hydrogen in trapping states innocuous to environmental degradation of the mechanical properties of high-strength steels has been separated and extracted using thermal desorption analysis (TDA) and slow strain rate test (SSRT). The high-strength steel occluding only hydrogen desorbed at low temperature (peak 1), as determined by TDA, decreases in maximum stress and plastic elongation with increasing occlusion time of peak 1 hydrogen. Thus the trapping state of peak 1 hydrogen is directly associated with environmental degradation. The trap activation energy for peak 1 hydrogen is 23.4 kJ/mol, so the peak 1 hydrogen corresponds to weaker binding states and diffusible states at room temperature. In contrast, the high-strength steel occluding only hydrogen desorbed at high temperature (peak 2), by TDA, maintains the maximum stress and plastic elongation in spite of an increasing content of peak 2 hydrogen. This result indicates that the peak 2 hydrogen trapping state is innocuous to environmental degradation, even though the steel occludes a large amount of peak 2 hydrogen. The trap activation energy for peak 2 hydrogen is 65.0 kJ/mol, which indicates a stronger binding state and nondiffusibility at room temperature. The trap activation energy for peak 2 hydrogen suggests that the driving force energy required for stress-induced, diffusion during elastic and plastic deformation, and the energy required for hydrogen dragging by dislocation mobility during plastic deformation are lower than the binding energy between hydrogen and trapping sites. The peak 2 hydrogen, therefore, is believed to not accumulate in front of the crack tip and to not cause environmental degradation in spite of being present in amounts as high as 2.9 mass ppm. (author)

Evidence for Surface and Subsurface Ice Inside Micro Cold-Traps on Mercury's North Pole

Science.gov (United States)

Rubanenko, L.; Mazarico, E.; Neumann, G. A.; Paige, D. A.

2017-01-01

The small obliquity of Mercury causes topographic depressions located near its poles to cast persistent shadows. Many [1, 9, 15] have shown these permanently shadowed regions (PSRs) may trap water ice for geologic time periods inside cold-traps. More recently, direct evidence for the presence of water ice deposits inside craters was remotely sensed in RADAR [5] and visible imagery [3]. Albedo measurements (reflectence at 1064 nm) obtained by the MErcury Space ENviroment GEochemistry and Ranging Laser Altimeter (MLA) found unusually bright and dark areas next to Mercury's north pole [7]. Using a thermal illumination model, Paige et al. [8] found the bright deposits are correlated with surface cold-traps, and the dark deposits are correlated with subsurface cold-traps. They suggested these anomalous deposits were brought to the surface by comets and were processed by the magnetospheric radiation flux, removing hydrogen and mixing C-N-O-S atoms to form a variety of molecules which will darken with time. Here we use a thermal illumination model to find the link between the cold-trap area fraction of a rough surface and its albedo. Using this link and the measurements obtained by MESSENGER we derive a surface and a subsurface ice distribution map on Mercury's north pole below the MESSENGER spatial resolution, approximately 500 m. We find a large fraction of the polar ice on Mercury resides inside micro cold-traps (of scales 10 - 100 m) distributed along the inter-crater terrain.

Observation of Hyperfine Transitions in Trapped Ground-State Antihydrogen

CERN Document Server

Olin, Arthur

2015-01-01

This paper discusses the first observation of stimulated magnetic resonance transitions between the hyperfine levels of trapped ground state atomic antihydrogen, confirming its presence in the ALPHA apparatus. Our observations show that these transitions are consistent with the values in hydrogen to within 4~parts~in~$10^3$. Simulations of the trapped antiatoms in a microwave field are consistent with our measurements.

Observation of hyperfine transitions in trapped ground-state antihydrogen

Energy Technology Data Exchange (ETDEWEB)

Collaboration: A. Olin for the ALPHA Collaboration

2015-08-15

This paper discusses the first observation of stimulated magnetic resonance transitions between the hyperfine levels of trapped ground state atomic antihydrogen, confirming its presence in the ALPHA apparatus. Our observations show that these transitions are consistent with the values in hydrogen to within 4 parts in 10{sup 3}. Simulations of the trapped antiatoms in a microwave field are consistent with our measurements.

Trapped surfaces due to concentration of gravitational radiation

International Nuclear Information System (INIS)

Beig, R.; O Murchadha, N.

1991-01-01

Sequences of global, asympotically flat solutions to the time-symmetric initial value constraints of general relativity in vacuo are constructed which develop outer trapped surfaces for large values of the argument. Thus all such configurations must gravitationally collapse. A new proof of the positivity of mass in the strong-field regime is also found. (Authors) 22 refs

The Effects of Surface Reconstruction and Electron-Positron Correlation on the Annihilation Characteristics of Positrons Trapped at Semiconductor Surfaces

International Nuclear Information System (INIS)

Fazleev, N. G.; Jung, E.; Weiss, A. H.

2009-01-01

Experimental positron annihilation induced Auger electron spectroscopy (PAES) data from Ge(100) and Ge(111) surfaces display several strong Auger peaks corresponding to M 4,5 N 1 N 2,3 , M 2,3 M 4,5 M 4,5 , M 2,3 M 4,5 V, and M 1 M 4,5 M 4,5 Auger transitions. The integrated peak intensities of Auger transitions have been used to obtain experimental annihilation probabilities for the Ge 3d and 3p core electrons. The experimental data were analyzed by performing theoretical studies of the effects of surface reconstructions and electron-positron correlations on image potential induced surface states and annihilation characteristics of positrons trapped at the reconstructed Ge(100) and Ge(111) surfaces. Calculations of positron surface states and annihilation characteristics have been performed for Ge(100) surface with (2x1), (2x2), and (4x2) reconstructions, and for Ge(111) surface with c(2x8) reconstruction. Estimates of the positron binding energy and annihilation characteristics reveal their sensitivity to the specific atomic structure of the topmost layers of the semiconductor and to the approximations used to describe electron-positron correlations. The results of these theoretical studies are compared with the ones obtained for the reconstructed Si(100)-(2x1) and Si(111)-(7x7) surfaces.

Demonstration of Cold 40Ca+ Ions Confined in a Microscopic Surface-Electrode Ion Trap

International Nuclear Information System (INIS)

Chen Liang; Wan Wei; Xie Yi; Wu Hao-Yu; Zhou Fei; Feng Mang

2013-01-01

40 Ca + ions are successfully confined, under the cooling of a red-detuned laser, in a home-built microscopic surface-electrode (MSE) trap. With all electrodes deposited on a low-rf-loss substrate, our 500-μm-scale MSE trap is designed involving three potential wells and manufactured by the standard technique of the printed circuit board. Both linear and two-dimensional crystals of 40 Ca + are observed in the trap after preliminary micromotion compensation is carried out. The development of the MSE trap aims at large-scale trapped-ion quantum information processing

Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

International Nuclear Information System (INIS)

Cho, Joung-min; Akiyama, Yuto; Kakinuma, Tomoyuki; Mori, Takehiko

2013-01-01

We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-dependent transconductance. Double exponential trap DOS are observed, in which Cy-NDI has considerable deep states, by contrast, DMDCNQI has substantial tail states. In addition, numerical simulation of the transistor characteristics has been conducted by assuming an exponential trap distribution and the interface approximation. Temperature dependence of transfer characteristics are well reproduced only using several parameters, and the trap DOS obtained from the simulated characteristics are in good agreement with the assumed trap DOS, indicating that our analysis is self-consistent. Although the experimentally obtained Meyer-Neldel temperature is related to the trap distribution width, the simulation satisfies the Meyer-Neldel rule only very phenomenologically. The simulation also reveals that the subthreshold swing is not always a good indicator of the total trap amount, because it also largely depends on the trap distribution width. Finally, band transport is explored from the simulation having a small number of traps. A crossing point of the transfer curves and negative activation energy above a certain gate voltage are observed in the simulated characteristics, where the critical V G above which band transport is realized is determined by the sum of the trapped and free charge states below the conduction band edge

Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

Directory of Open Access Journals (Sweden)

Fu-Chien Chiu

2013-01-01

Full Text Available The interfacial properties between silicon and hafnium oxide (HfO2 are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross-section are obtained in this work. Among the interfacial properties, the surface state capture cross-section is approximately constant even if the postdeposition annealing condition is changed. This effective capture cross-section of surface states is about 2.4 × 10−15 cm2, which may be an inherent nature in the HfO2/Si interface.

La modified TiO{sub 2} photoanode and its effect on DSSC performance: A comparative study of doping and surface treatment on deep and surface charge trapping

Energy Technology Data Exchange (ETDEWEB)

Ako, Rajour Tanyi [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Ekanayake, Piyasiri, E-mail: piyasiri.ekanayake@ubd.edu.bn [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Centre for Advanced Material and Energy Sciences (CAMES), Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Tan, Ai Ling [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Young, David James [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara Brunei Darussalam (Brunei Darussalam); Faculty of Science, Health, Education and Engineering, University of the Sunshine Coast, Maroochydore DC, Queensland, 4558 (Australia); Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research - A*STAR, #08-03, 2 Fusionopolis Way, Innovis, 138634 (Singapore)

2016-04-01

The effect of Lanthanum ions (La{sup 3+}) on charge trapping in dye-sensitized solar cell (DSSC) photoanodes has been investigated with doped and surface-treated TiO{sub 2} nanoparticles. Doped nanoparticles consisting of 0.5 mol.% Mg and La co-doped TiO{sub 2}, 0.5 mol.% Mg doped TiO{sub 2} and pure TiO{sub 2} were synthesized by the sol gel method. Surface-treated nanoparticles of Mg doped TiO{sub 2} and pure TiO{sub 2} were prepared by ball milling in 0.05 M aqueous La{sup 3+} solution. All materials were analyzed by XRD, XPS and UV–Vis DRS. Cell performance, surface free energy state changes and electron injection efficiency of DSSCs based on these nanoparticles were evaluated using current –voltage measurements, EIS and Incident photon to current conversion efficiency. Doped materials had La and Mg ions incorporated into the TiO{sub 2} lattice, while no lattice changes were observed for the surface-treated materials. Less visible light was absorbed by treated oxides compared with doped oxide samples. The overall power conversion efficiencies (PCE) of DSSC photoanodes based on doped materials were twice those of photoanodes fabricated from treated nanoparticles. Doping establishes deep traps that reduce the recombination of electron–hole (e–h) pairs. Conversely, the presence of absorbed oxygen in treated materials enhances e–h recombination with electrolyte at surface trap sites. - Highlights: • DSSC performance is investigated using photoanodes of doped and La{sup 3+} surface treated TiO{sub 2}. • TiO{sub 2} and Mg–TiO{sub 2} treated with La{sup 3+} absorbed less visible light. • A high concentration of absorbed oxygen on surface treated oxides reduced band bending. • Increased surface free energy in the modified DSSC anodes is caused more by Mg{sup 2+} at Ti{sup 4+} than by La{sup 3+} at the surfaces. • Near surface charge traps due to La{sup 3+} treatment promotes e–h recombination.

Tin Oxide Nanowires: The Influence of Trap States on Ultrafast Carrier Relaxation

Directory of Open Access Journals (Sweden)

Zervos Matthew

2009-01-01

Full Text Available Abstract We have studied the optical properties and carrier dynamics in SnO2nanowires (NWs with an average radius of 50 nm that were grown via the vapor–liquid solid method. Transient differential absorption measurements have been employed to investigate the ultrafast relaxation dynamics of photogenerated carriers in the SnO2NWs. Steady state transmission measurements revealed that the band gap of these NWs is 3.77 eV and contains two broad absorption bands. The first is located below the band edge (shallow traps and the second near the center of the band gap (deep traps. Both of these absorption bands seem to play a crucial role in the relaxation of the photogenerated carriers. Time resolved measurements suggest that the photogenerated carriers take a few picoseconds to move into the shallow trap states whereas they take ~70 ps to move from the shallow to the deep trap states. Furthermore the recombination process of electrons in these trap states with holes in the valence band takes ~2 ns. Auger recombination appears to be important at the highest fluence used in this study (500 μJ/cm2; however, it has negligible effect for fluences below 50 μJ/cm2. The Auger coefficient for the SnO2NWs was estimated to be 7.5 ± 2.5 × 10−31 cm6/s.

MOS Capacitance—Voltage Characteristics III. Trapping Capacitance from 2-Charge-State Impurities

International Nuclear Information System (INIS)

Jie Binbin; Sah Chihtang

2011-01-01

Low-frequency and high-frequency capacitance—voltage curves of Metal—Oxide—Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier, or one-energy-level impurity species. Models described include a donor electron trap and an acceptor hole trap, both donors, both acceptors, both shallow energy levels, both deep, one shallow and one deep, and the identical donor and acceptor. Device and material parameters are selected to simulate chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications. (invited papers)

Electronic relaxation of deep bulk trap and interface state in ZnO ceramics

International Nuclear Information System (INIS)

Yang Yan; Li Sheng-Tao; Ding Can; Cheng Peng-Fei

2011-01-01

This paper investigates the electronic relaxation of deep bulk trap and interface state in ZnO ceramics based on dielectric spectra measured in a wide range of temperature, frequency and bias, in addition to the steady state response. It discusses the nature of net current flowing over the barrier affected by interface state, and then obtains temperature-dependent barrier height by approximate calculation from steady I—V (current—voltage) characteristics. Additional conductance and capacitance arising from deep bulk trap relaxation are calculated based on the displacement of the cross point between deep bulk trap and Fermi level under small AC signal. From the resonances due to deep bulk trap relaxation on dielectric spectra, the activation energies are obtained as 0.22 eV and 0.35 eV, which are consistent with the electronic levels of the main defect interstitial Zn and vacancy oxygen in the depletion layer. Under moderate bias, another resonance due to interface relaxation is shown on the dielectric spectra. The DC-like conductance is also observed in high temperature region on dielectric spectra, and the activation energy is much smaller than the barrier height in steady state condition, which is attributed to the displacement current coming from the shallow bulk trap relaxation or other factors. (fluids, plasmas and electric discharges)

Coupling a Surface Acoustic Wave to an Electron Spin in Diamond via a Dark State

Directory of Open Access Journals (Sweden)

D. Andrew Golter

2016-12-01

Full Text Available The emerging field of quantum acoustics explores interactions between acoustic waves and artificial atoms and their applications in quantum information processing. In this experimental study, we demonstrate the coupling between a surface acoustic wave (SAW and an electron spin in diamond by taking advantage of the strong strain coupling of the excited states of a nitrogen vacancy center while avoiding the short lifetime of these states. The SAW-spin coupling takes place through a Λ-type three-level system where two ground spin states couple to a common excited state through a phonon-assisted as well as a direct dipole optical transition. Both coherent population trapping and optically driven spin transitions have been realized. The coherent population trapping demonstrates the coupling between a SAW and an electron spin coherence through a dark state. The optically driven spin transitions, which resemble the sideband transitions in a trapped-ion system, can enable the quantum control of both spin and mechanical degrees of freedom and potentially a trapped-ion-like solid-state system for applications in quantum computing. These results establish an experimental platform for spin-based quantum acoustics, bridging the gap between spintronics and quantum acoustics.

A nonlinear model for surface segregation and solute trapping during planar film growth

International Nuclear Information System (INIS)

Han, Xiaoying; Spencer, Brian J.

2007-01-01

Surface segregation and solute trapping during planar film growth is one of the important issues in molecular beam epitaxy, yet the study on surface composition has been largely restricted to experimental work. This paper introduces some mathematical models of surface composition during planar film growth. Analytical solutions are obtained for the surface composition during growth

Probing the density of trap states in the middle of the bandgap using ambipolar organic field-effect transistors

Science.gov (United States)

Häusermann, Roger; Chauvin, Sophie; Facchetti, Antonio; Chen, Zhihua; Takeya, Jun; Batlogg, Bertram

2018-04-01

The number of trap states in the band gap of organic semiconductors directly influences the charge transport as well as the threshold and turn-on voltage. Direct charge transport measurements have been used until now to probe the trap states rather close to the transport level, whereas their number in the middle of the band gap has been elusive. In this study, we use PDIF-CN2, a well known n-type semiconductor, together with vanadium pentoxide electrodes to build ambipolar field-effect transistors. Employing three different methods, we study the density of trap states in the band gap of the semiconductor. These methods give consistent results, and no pool of defect states was found. Additionally, we show first evidence that the number of trap states close to the transport level is correlated with the number of traps in the middle of the band-gap, meaning that a high number of trap states close to the transport level also implies a high number of trap states in the middle of the band gap. This points to a common origin of the trap states over a wide energy range.

Quantum computing with four-particle decoherence-free states in ion trap

OpenAIRE

Feng, Mang; Wang, Xiaoguang

2001-01-01

Quantum computing gates are proposed to apply on trapped ions in decoherence-free states. As phase changes due to time evolution of components with different eigenenergies of quantum superposition are completely frozen, quantum computing based on this model would be perfect. Possible application of our scheme in future ion-trap quantum computer is discussed.

Ultrafast state detection and 2D ion crystals in a Paul trap

Science.gov (United States)

Ip, Michael; Ransford, Anthony; Campbell, Wesley

2016-05-01

Projective readout of quantum information stored in atomic qubits typically uses state-dependent CW laser-induced fluorescence. This method requires an often sophisticated imaging system to spatially filter out the background CW laser light. We present an alternative approach that instead uses simple pulse sequences from a mode-locked laser to affect the same state-dependent excitations in less than 1 ns. The resulting atomic fluorescence occurs in the dark, allowing the placement of non-imaging detectors right next to the atom to improve the qubit state detection efficiency and speed. We also study 2D Coulomb crystals of atomic ions in an oblate Paul trap. We find that crystals with hundreds of ions can be held in the trap, potentially offering an alternative to the use of Penning traps for the quantum simulation of 2D lattice spin models. We discuss the classical physics of these crystals and the metastable states that are supported in 2D. This work is supported by the US Army Research Office.

Effects of oxide traps, interface traps, and ''border traps'' on metal-oxide-semiconductor devices

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.; Reber, R.A. Jr.; Meisenheimer, T.L.; Schwank, J.R.; Shaneyfelt, M.R.; Riewe, L.C.

1993-01-01

We have identified several features of the 1/f noise and radiation response of metal-oxide-semiconductor (MOS) devices that are difficult to explain with standard defect models. To address this issue, and in response to ambiguities in the literature, we have developed a revised nomenclature for defects in MOS devices that clearly distinguishes the language used to describe the physical location of defects from that used to describe their electrical response. In this nomenclature, ''oxide traps'' are simply defects in the SiO 2 layer of the MOS structure, and ''interface traps'' are defects at the Si/SiO 2 interface. Nothing is presumed about how either type of defect communicates with the underlying Si. Electrically, ''fixed states'' are defined as trap levels that do not communicate with the Si on the time scale of the measurements, but ''switching states'' can exchange charge with the Si. Fixed states presumably are oxide traps in most types of measurements, but switching states can either be interface traps or near-interfacial oxide traps that can communicate with the Si, i.e., ''border traps'' [D. M. Fleetwood, IEEE Trans. Nucl. Sci. NS-39, 269 (1992)]. The effective density of border traps depends on the time scale and bias conditions of the measurements. We show the revised nomenclature can provide focus to discussions of the buildup and annealing of radiation-induced charge in non-radiation-hardened MOS transistors, and to changes in the 1/f noise of MOS devices through irradiation and elevated-temperature annealing

Electromagnetic controllable surfaces based on trapped-mode effect

Directory of Open Access Journals (Sweden)

V. Dmitriev

2012-10-01

Full Text Available In this paper we present some recent results of our theoretical investigations of electromagnetically controllable surfaces. These surfaces are designed on the basis of periodic arrays made of metallic inclusions of special form which are placed on a thin substrate of active material (magnetized ferrite or optically active semiconductor. The main peculiarity of the studied structures is their capability to support the trapped-mode resonance which is a result of the antiphase current oscillations in the elements of a periodic cell. Several effects, namely: tuning the position of passband and the linear and nonlinear (bistable transmission switching are considered when an external static magnetic field or optical excitation are applied. Our numerical calculations are fulfilled in both microwave and optical regions.

Implementation of a symmetric surface-electrode ion trap with field compensation using a modulated Raman effect

International Nuclear Information System (INIS)

Allcock, D T C; Sherman, J A; Stacey, D N; Burrell, A H; Curtis, M J; Imreh, G; Linke, N M; Szwer, D J; Webster, S C; Steane, A M; Lucas, D M

2010-01-01

We describe a new electrode design for a surface-electrode Paul trap, which allows rotation of the normal modes out of the trap plane, and a technique for micromotion compensation in all directions using a two-photon process, which avoids the need for an ultraviolet laser directed to the trap plane. The fabrication and characterization of the trap are described, as well as its implementation for the trapping and cooling of single Ca + ions. We also propose a repumping scheme that increases ion fluorescence and simplifies heating rate measurements obtained by time-resolved ion fluorescence during Doppler cooling.

Implementation of a symmetric surface-electrode ion trap with field compensation using a modulated Raman effect

Science.gov (United States)

Allcock, D. T. C.; Sherman, J. A.; Stacey, D. N.; Burrell, A. H.; Curtis, M. J.; Imreh, G.; Linke, N. M.; Szwer, D. J.; Webster, S. C.; Steane, A. M.; Lucas, D. M.

2010-05-01

We describe a new electrode design for a surface-electrode Paul trap, which allows rotation of the normal modes out of the trap plane, and a technique for micromotion compensation in all directions using a two-photon process, which avoids the need for an ultraviolet laser directed to the trap plane. The fabrication and characterization of the trap are described, as well as its implementation for the trapping and cooling of single Ca+ ions. We also propose a repumping scheme that increases ion fluorescence and simplifies heating rate measurements obtained by time-resolved ion fluorescence during Doppler cooling.

Trapped-ion quantum logic gates based on oscillating magnetic fields

Science.gov (United States)

Ospelkaus, Christian; Langer, Christopher E.; Amini, Jason M.; Brown, Kenton R.; Leibfried, Dietrich; Wineland, David J.

2009-05-01

Oscillating magnetic fields and field gradients can be used to implement single-qubit rotations and entangling multiqubit quantum gates for trapped-ion quantum information processing. With fields generated by currents in microfabricated surface-electrode traps, it should be possible to achieve gate speeds that are comparable to those of optically induced gates for realistic distances between the ions and the electrode surface. Magnetic-field-mediated gates have the potential to significantly reduce the overhead in laser-beam control and motional-state initialization compared to current QIP experiments with trapped ions and will eliminate spontaneous scattering decoherence, a fundamental source of decoherence in laser-mediated gates. A potentially beneficial environment for the implementation of such schemes is a cryogenic ion trap, because small length scale traps with low motional heating rates can be realized. A cryogenic ion trap experiment is currently under construction at NIST.

Electron scattering by trapped fermionic atoms

International Nuclear Information System (INIS)

Wang Haijun; Jhe, Wonho

2002-01-01

Considering the Fermi gases of alkali-metal atoms that are trapped in a harmonic potential, we study theoretically the elastic and inelastic scattering of the electrons by the trapped Fermi atoms and present the corresponding differential cross sections. We also obtain the stopping power for the cases that the electronic state as well as the center-of-mass state are excited both separately and simultaneously. It is shown that the elastic scattering process is no longer coherent in contrast to the electron scattering by the atomic Bose-Einstein condensate (BEC). For the inelastic scattering process, on the other hand, the differential cross section is found to be proportional to the 2/3 power of the number of the trapped atoms. In particular, the trapped fermionic atoms display the effect of ''Fermi surface,'' that is, only the energy levels near the Fermi energy have dominant contributions to the scattering process. Moreover, it is found that the stopping power scales as the 7/6 power of the atomic number. These results are fundamentally different from those of the electron scattering by the atomic BEC, mainly due to the different statistics obeyed by the trapped atomic systems

Enhancement in the photodetection of ZnO nanowires by introducing surface-roughness-induced traps

International Nuclear Information System (INIS)

Park, Woojin; Jo, Gunho; Hong, Woong-Ki; Yoon, Jongwon; Choe, Minhyeok; Ji, Yongsung; Kim, Geunjin; Kahng, Yung Ho; Lee, Kwanghee; Lee, Takhee; Lee, Sangchul; Wang, Deli

2011-01-01

We investigated the enhanced photoresponse of ZnO nanowire transistors that was introduced with surface-roughness-induced traps by a simple chemical treatment with isopropyl alcohol (IPA). The enhanced photoresponse of IPA-treated ZnO nanowire devices is attributed to an increase in adsorbed oxygen on IPA-induced surface traps. The results of this study revealed that IPA-treated ZnO nanowire devices displayed higher photocurrent gains and faster photoswitching speed than transistors containing unmodified ZnO nanowires. Thus, chemical treatment with IPA can be a useful method for improving the photoresponse of ZnO nanowire devices.

Thermoluminescence study of the trapped charge at an alumina surface electrode in different dielectric barrier discharge regimes

Energy Technology Data Exchange (ETDEWEB)

Ambrico, P F; Ambrico, M; Dilecce, G; De Benedictis, S [Consiglio Nazionale delle Ricerche, Istituto di Metodologie Inorganiche e dei Plasmi UOS Bari-c/o Dipartimento di Chimica, Universita degli Studi di Bari ' Aldo Moro' , via Orabona, 4, 70126 Bari (Italy); Colaianni, A [Dipartimento di Geologia e Geofisica, Universita degli Studi di Bari ' Aldo Moro' , via Orabona, 4, 70126 Bari (Italy); Schiavulli, L, E-mail: paolofrancesco.ambrico@cnr.i [Dipartimento Interateneo di Fisica, Universita degli Studi di Bari ' Aldo Moro' , via Orabona, 4, 70126 Bari (Italy)

2010-08-18

In this study, the charge trapping effect in alumina dielectric surfaces has been deeply investigated by means of a dedicated dielectric barrier discharge apparatus in different discharge regimes and gas mixtures. This work further validates our previous findings in the case of air discharges in a filamentary regime. Long lasting charge trapping has been evidenced by ex situ thermoluminescence characterizations of alumina dielectric barrier plates exposed to a plasma. The density of trapped surface charges was found to be higher in the glow discharge with respect to pseudo-glow and filamentary regimes, and for all regimes the minimum trap activation temperature was 390 K and the trap energy was less than or around 1 eV. This implies that in the case of glow discharges a higher reservoir of electrons is present. Also, the effect was found to persist for several days after running the discharge.

Thermoluminescence study of the trapped charge at an alumina surface electrode in different dielectric barrier discharge regimes

International Nuclear Information System (INIS)

Ambrico, P F; Ambrico, M; Dilecce, G; De Benedictis, S; Colaianni, A; Schiavulli, L

2010-01-01

In this study, the charge trapping effect in alumina dielectric surfaces has been deeply investigated by means of a dedicated dielectric barrier discharge apparatus in different discharge regimes and gas mixtures. This work further validates our previous findings in the case of air discharges in a filamentary regime. Long lasting charge trapping has been evidenced by ex situ thermoluminescence characterizations of alumina dielectric barrier plates exposed to a plasma. The density of trapped surface charges was found to be higher in the glow discharge with respect to pseudo-glow and filamentary regimes, and for all regimes the minimum trap activation temperature was 390 K and the trap energy was less than or around 1 eV. This implies that in the case of glow discharges a higher reservoir of electrons is present. Also, the effect was found to persist for several days after running the discharge.

An Ingenious Super Light Trapping Surface Templated from Butterfly Wing Scales

Science.gov (United States)

Han, Zhiwu; Li, Bo; Mu, Zhengzhi; Yang, Meng; Niu, Shichao; Zhang, Junqiu; Ren, Luquan

2015-08-01

Based on the super light trapping property of butterfly Trogonoptera brookiana wings, the SiO2 replica of this bionic functional surface was successfully synthesized using a simple and highly effective synthesis method combining a sol-gel process and subsequent selective etching. Firstly, the reflectivity of butterfly wing scales was carefully examined. It was found that the whole reflectance spectroscopy of the butterfly wings showed a lower level (less than 10 %) in the visible spectrum. Thus, it was confirmed that the butterfly wings possessed a super light trapping effect. Afterwards, the morphologies and detailed architectures of the butterfly wing scales were carefully investigated using the ultra-depth three-dimensional (3D) microscope and field emission scanning electronic microscopy (FESEM). It was composed by the parallel ridges and quasi-honeycomb-like structure between them. Based on the biological properties and function above, an exact SiO2 negative replica was fabricated through a synthesis method combining a sol-gel process and subsequent selective etching. At last, the comparative analysis of morphology feature size and the reflectance spectroscopy between the SiO2 negative replica and the flat plate was conducted. It could be concluded that the SiO2 negative replica inherited not only the original super light trapping architectures, but also the super light trapping characteristics of bio-template. This work may open up an avenue for the design and fabrication of super light trapping materials and encourage people to look for more super light trapping architectures in nature.

Trapped-ion quantum logic gates based on oscillating magnetic fields.

Science.gov (United States)

Ospelkaus, C; Langer, C E; Amini, J M; Brown, K R; Leibfried, D; Wineland, D J

2008-08-29

Oscillating magnetic fields and field gradients can be used to implement single-qubit rotations and entangling multiqubit quantum gates for trapped-ion quantum information processing (QIP). With fields generated by currents in microfabricated surface-electrode traps, it should be possible to achieve gate speeds that are comparable to those of optically induced gates for realistic distances between the ion crystal and the electrode surface. Magnetic-field-mediated gates have the potential to significantly reduce the overhead in laser-beam control and motional-state initialization compared to current QIP experiments with trapped ions and will eliminate spontaneous scattering, a fundamental source of decoherence in laser-mediated gates.

Efficacy of multifunnel traps for capturing emerald ash borer (Coleoptera: Buprestidae): effect of color, glue, and other trap coatings.

Science.gov (United States)

Francese, Joseph A; Fraser, Ivich; Lance, David R; Mastro, Victor C

2011-06-01

Tens of thousands of adhesive-coated purple prism traps are deployed annually in the United States to survey for the invasive emerald ash borer, Agrilus planipennis Fairmaire (Coleoptera: Buprestidae). A reusable, more user-friendly trap is desired by program managers, surveyors, and researchers. Field assays were conducted in southeastern Michigan to ascertain the feasibility of using nonsticky traps as survey and detection tools for emerald ash borer. Three nonsticky trap designs, including multifunnel (Lindgren), modified intercept panel, and drainpipe (all painted purple) were compared with the standard purple prism trap; no statistical differences in capture of emerald ash borer adults were detected between the multifunnel design and the prism. In subsequent color comparison assays, both green- and purple-painted multifunnel traps (and later, plastic versions of these colors) performed as well or better than the prism traps. Multifunnel traps coated with spray-on adhesive caught more beetles than untreated traps. The increased catch, however, occurred in the traps' collection cups and not on the trap surface. In a separate assay, there was no significant difference detected between glue-coated traps and Rain-X (normally a glass treatment)-coated traps, but both caught significantly more A. planipennis adults than untreated traps.

Negative pion trapping by metastable state in liquid helium

International Nuclear Information System (INIS)

Nakamura, S.N.; Iwasaki, M.; Outa, H.

1991-11-01

We found long-lived metastable states of stopped π - 's in liquid helium by measuring time spectra of two different delayed products: 1) protons emitted after π - absorption by 4 He nuclei and 2) 70-MeV electrons originating from free π - → e - (ν e )-bar decay. The lifetime and fraction of delayed π - absorption obtained by emitted protons are 7.26±0.12 nsec and 1.66±0.05%, respectively. The free-decay fraction was calculated to be 0.64±0.03% from this result, which is consistent with the observed free-decay fraction of π e2 decay. These results imply that 2.30±0.07% of stopped π - are trapped in metastable states which have an overall lifetime of 10.1±0.2 nsec. The same experiment and analysis were performed for stopped π - in liquid neon. No evidence for trapping was found in liquid neon. (author)

Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

International Nuclear Information System (INIS)

Jiang Zhi; Zhuang Yi-Qi; Li Cong; Wang Ping; Liu Yu-Qi

2016-01-01

Trap-assisted tunneling (TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor (TFET). In this paper, we assess subthreshold performance of double gate TFET (DG-TFET) through a band-to-band tunneling (BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile (D it ) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current. (paper)

Trap spectrum of the ``new oxygen donor'' in silicon

Science.gov (United States)

Hölzlein, K.; Pensl, G.; Schulz, M.

1984-07-01

Electronic properties of the new oxygen donor generated in phosphorus-doped Czochralski-silicon at 650‡C are investigated by deep level transient spectroscopy. A continuous distribution of trap states (1014 1016 cm-3 eV-1) is detected in the upper half of the band gap with increasing values towards the conduction band. The magnitude of the state density observed increases with the oxygen content, the heat duration, and a preanneal at temperatures lower than 650‡C. The continuous trap spectrum of the new donor is explained by interface states occuring at the surface of SiO x precipitates.

Passivating surface states on water splitting hematite photoanodes with alumina overlayers

KAUST Repository

Le Formal, Florian; Té treault, Nicolas; Cornuz, Maurin; Moehl, Thomas; Grä tzel, Michael; Sivula, Kevin

2011-01-01

Hematite is a promising material for inexpensive solar energy conversion via water splitting but has been limited by the large overpotential (0.5-0.6 V) that must be applied to afford high water oxidation photocurrent. This has conventionally been addressed by coating it with a catalyst to increase the kinetics of the oxygen evolution reaction. However, surface recombination at trapping states is also thought to be an important factor for the overpotential, and herein we investigate a strategy to passivate trapping states using conformal overlayers applied by atomic layer deposition. While TiO2 overlayers show no beneficial effect, we find that an ultra-thin coating of Al2O3 reduces the overpotential required with state-of-the-art nano-structured photo-anodes by as much as 100 mV and increases the photocurrent by a factor of 3.5 (from 0.24 mA cm-2 to 0.85 mA cm-2) at +1.0 V vs. the reversible hydrogen electrode (RHE) under standard illumination conditions. The subsequent addition of Co2+ ions as a catalyst further decreases the overpotential and leads to a record photocurrent density at 0.9 V vs. RHE (0.42 mA cm-2). A detailed investigation into the effect of the Al2O3 overlayer by electrochemical impedance and photoluminescence spectroscopy reveals a significant change in the surface capacitance and radiative recombination, respectively, which distinguishes the observed overpotential reduction from a catalytic effect and confirms the passivation of surface states. Importantly, this work clearly demonstrates that two distinct loss processes are occurring on the surface of high-performance hematite and suggests a viable route to individually address them. © The Royal Society of Chemistry 2011.

Passivating surface states on water splitting hematite photoanodes with alumina overlayers

KAUST Repository

Le Formal, Florian

2011-01-24

Hematite is a promising material for inexpensive solar energy conversion via water splitting but has been limited by the large overpotential (0.5-0.6 V) that must be applied to afford high water oxidation photocurrent. This has conventionally been addressed by coating it with a catalyst to increase the kinetics of the oxygen evolution reaction. However, surface recombination at trapping states is also thought to be an important factor for the overpotential, and herein we investigate a strategy to passivate trapping states using conformal overlayers applied by atomic layer deposition. While TiO2 overlayers show no beneficial effect, we find that an ultra-thin coating of Al2O3 reduces the overpotential required with state-of-the-art nano-structured photo-anodes by as much as 100 mV and increases the photocurrent by a factor of 3.5 (from 0.24 mA cm-2 to 0.85 mA cm-2) at +1.0 V vs. the reversible hydrogen electrode (RHE) under standard illumination conditions. The subsequent addition of Co2+ ions as a catalyst further decreases the overpotential and leads to a record photocurrent density at 0.9 V vs. RHE (0.42 mA cm-2). A detailed investigation into the effect of the Al2O3 overlayer by electrochemical impedance and photoluminescence spectroscopy reveals a significant change in the surface capacitance and radiative recombination, respectively, which distinguishes the observed overpotential reduction from a catalytic effect and confirms the passivation of surface states. Importantly, this work clearly demonstrates that two distinct loss processes are occurring on the surface of high-performance hematite and suggests a viable route to individually address them. © The Royal Society of Chemistry 2011.

Two Schemes for Generation of Entanglement for Vibronic Collective States of Multiple Trapped Ions

International Nuclear Information System (INIS)

Yang Wenxing; Li Jiahua; Zheng Anshou

2007-01-01

We propose two schemes to prepare entanglement for the vibronic collective states of multiple trapped ions. The first scheme aims to generating multipartite entanglement for vibrational modes of trapped ions, which only requires a single laser beam tuned to the ionic carrier frequency. Our scheme works in the mediated excitation regime, in which the corresponding Rabi frequency is equal to the trap frequency. Beyond their fundamental importance, these states may be of interest for experimental studies on decoherence since the present scheme operates in a fast way. The second scheme aims to preparing the continuous variable multimode maximally Greenberger-Horne-Zeilinger state. The distinct advantage is that the operation time is only limited by the available laser intensity, not by the inherent mechanisms such as off-resonant excitations. This makes it promising to obtain entanglement of multiple coherent and squeezing states with desired amplitudes in a reasonable time.

NH2- in a cold ion trap with He buffer gas: Ab initio quantum modeling of the interaction potential and of state-changing multichannel dynamics

Science.gov (United States)

Hernández Vera, Mario; Yurtsever, Ersin; Wester, Roland; Gianturco, Franco A.

2018-05-01

We present an extensive range of accurate ab initio calculations, which map in detail the spatial electronic potential energy surface that describes the interaction between the molecular anion NH2 - (1A1) in its ground electronic state and the He atom. The time-independent close-coupling method is employed to generate the corresponding rotationally inelastic cross sections, and then the state-changing rates over a range of temperatures from 10 to 30 K, which is expected to realistically represent the experimental trapping conditions for this ion in a radio frequency ion trap filled with helium buffer gas. The overall evolutionary kinetics of the rotational level population involving the molecular anion in the cold trap is also modelled during a photodetachment experiment and analyzed using the computed rates. The present results clearly indicate the possibility of selectively detecting differences in behavior between the ortho- and para-anions undergoing photodetachment in the trap.

About stability of levitating states of superconducting myxini of plasma traps-galateas

International Nuclear Information System (INIS)

Bishaev, A.M.; Bush, A.A.; Denis'uk, A.I.; D'yakonitsa, O.Y.; Kamentsev, K.Y.; Kozintseva, M.V.; Kolesnikova, T.G.; Shapovalov, M.M.; Voronchenko, S.A.; Gavrikov, M.B.; Savelyev, V.V.; Smirnov, P.G.

2015-01-01

To develop a plasma trap with levitating superconducting magnetic coils it is necessary to carry out the search of their stable levitating states. With this purpose, based upon the superconductor property to conserve the trapped magnetic flux, in the uniform gravitational field the analytical dependence of the potential energy of one or two superconducting rings, having trapped the given magnetic fluxes, in the field of the fixed ring with the constant current from the coordinates of the free rings and the deflection angle of their axes from the common axis of the magnetic system has been obtained in the thin ring approximation. Under magnetic fluxes of the same polarity in coils the existence of the found from the calculations equilibrium levitating states for the manufactured HTSC rings stable relative to the vertical shifts of levitating rings and to the deflection angle of their axes from the vertical has been confirmed experimentally

Quantum State-Resolved Collision Dynamics of Nitric Oxide at Ionic Liquid and Molten Metal Surfaces

Science.gov (United States)

Zutz, Amelia Marie

Detailed molecular scale interactions at the gas-liquid interface are explored with quantum state-to-state resolved scattering of a jet-cooled beam of NO(2pi1/2; N = 0) from ionic liquid and molten metal surfaces. The scattered distributions are probed via laser-induced fluorescence methods, which yield rotational and spin-orbit state populations that elucidate the dynamics of energy transfer at the gas-liquid interface. These collision dynamics are explored as a function of incident collision energy, surface temperature, scattering angle, and liquid identity, all of which are found to substantially affect the degree of rotational, electronic and vibrational excitation of NO via collisions at the liquid surface. Rotational distributions observed reveal two distinct scattering pathways, (i) molecules that trap, thermalize and eventually desorb from the surface (trapping-desorption, TD), and (ii) those that undergo prompt recoil (impulsive scattering, IS) prior to complete equilibration with the liquid surface. Thermally desorbing NO molecules are found to have rotational temperatures close to, but slightly cooler than the surface temperature, indicative of rotational dependent sticking probabilities on liquid surfaces. Nitric oxide is a radical with multiple low-lying electronic states that serves as an ideal candidate for exploring nonadiabatic state-changing collision dynamics at the gas-liquid interface, which induce significant excitation from ground (2pi1/2) to excited (2pi 3/2) spin-orbit states. Molecular beam scattering of supersonically cooled NO from hot molten metals (Ga and Au, Ts = 300 - 1400 K) is also explored, which provide preliminary evidence for vibrational excitation of NO mediated by thermally populated electron-hole pairs in the hot, conducting liquid metals. The results highlight the presence of electronically nonadiabatic effects and build toward a more complete characterization of energy transfer dynamics at gas-liquid interfaces.

The trapping of potassium atoms by a polycrystalline tungsten surface as a function of energy and angle of incidence. ch. 1

International Nuclear Information System (INIS)

Hurkmans, A.; Overbosch, E.G.; Olander, D.R.; Los, J.

1976-01-01

The trapping probability of potassium atoms on a polycrystalline tungsten surface has been measured as a function of the angle of incidence and as a function of the energy of the incoming atoms. Below an energy of 1 eV the trapping was complete; above 20 eV only reflection occurred. The trapping probability increased with increasing angle of incidence. The measurements are compared with a simple model of the fraction of atoms initially trapped. The model, a one-dimensional cube model including a Boltzmann distribution of the velocities of oscillating surface atoms, partially explains the data. The trapping probability as a function of incoming energy is well described for normal incidence, justifying the inclusion of thermal motion of the surface atoms in the model. The angular dependence can be explained in a qualitative way, although there is a substantial discrepancy for large angles of incidence, showing the presence of surface structure. (Auth.)

Fast Ground State Manipulation of Neutral Atoms in Microscopic Optical Traps

International Nuclear Information System (INIS)

Yavuz, D.D.; Kulatunga, P.B.; Urban, E.; Johnson, T.A.; Proite, N.; Henage, T.; Walker, T.G.; Saffman, M.

2006-01-01

We demonstrate Rabi flopping at MHz rates between ground hyperfine states of neutral 87 Rb atoms that are trapped in two micron sized optical traps. Using tightly focused laser beams we demonstrate high fidelity, site specific Rabi rotations with cross talk on neighboring sites separated by 8 μm at the level of 10 -3 . Ramsey spectroscopy is used to measure a dephasing time of 870 μs, which is ≅5000 times longer than the time for a π/2 pulse

Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method

Science.gov (United States)

Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun

2018-04-01

The threshold voltage instabilities and huge hysteresis of MoS2 thin film transistors (TFTs) have raised concerns about their practical applicability in next-generation switching devices. These behaviors are associated with charge trapping, which stems from tunneling to the adjacent trap site, interfacial redox reaction and interface and/or bulk trap states. In this report, we present quantitative analysis on the electron charge trapping mechanism of MoS2 TFT by fast pulse I-V method and the space charge limited current (SCLC) measurement. By adopting the fast pulse I-V method, we were able to obtain effective mobility. In addition, the origin of the trap states was identified by disassembling the sub-gap states into interface trap and bulk trap states by simple extraction analysis. These measurement methods and analyses enable not only quantitative extraction of various traps but also an understanding of the charge transport mechanism in MoS2 TFTs. The fast I-V data and SCLC data obtained under various measurement temperatures and ambient show that electron transport to neighboring trap sites by tunneling is the main charge trapping mechanism in thin-MoS2 TFTs. This implies that interfacial traps account for most of the total sub-gap states while the bulk trap contribution is negligible, at approximately 0.40% and 0.26% in air and vacuum ambient, respectively. Thus, control of the interface trap states is crucial to further improve the performance of devices with thin channels.

On the Origin of Surface Traps in Colloidal II–VI Semiconductor Nanocrystals

NARCIS (Netherlands)

Houtepen, Arjan J.; Hens, Zeger; Owen, Jonathan S.; Infante, Ivan

2017-01-01

One of the greatest challenges in the field of semiconductor nanomaterials is to make trap-free nanocrystalline structures to attain a remarkable improvement of their optoelectronic performances. In semiconductor nanomaterials, a very high number of atoms is located on the surface and these atoms

Theoretical studies of positron states and annihilation characteristics at the oxidized Cu(100) surface

Energy Technology Data Exchange (ETDEWEB)

Fazleev, N. G. [Department of Physics, Box 19059, University of Texas at Arlington, Arlington Texas 76019 (United States) and Institute of Physics, Kazan Federal University, Kremlevskaya18, Kazan 420008 (Russian Federation); Weiss, A. H. [Department of Physics, Box 19059, University of Texas at Arlington, Arlington Texas 76019 (United States)

2013-04-19

In this work we present the results of theoretical studies of positron surface and bulk states and annihilation probabilities of surface-trapped positrons with relevant core electrons at the oxidized Cu(100) surface under conditions of high oxygen coverage. An ab-initio study of the electronic properties of the Cu(100) missing row reconstructed surface at various on surface and sub-surface oxygen coverages has been performed on the basis of the density functional theory (DFT) using the Dmol3 code and the generalized gradient approximation (GGA). Surface structures in calculations have been constructed by adding oxygen atoms to various surface hollow and sub-surface octahedral sites of the 0.5 monolayer (ML) missing row reconstructed phase of the Cu(100) surface with oxygen coverages ranging from 0.5 to 1.5 ML. The charge redistribution at the surface and variations in atomic structure and chemical composition of the topmost layers associated with oxidation and surface reconstruction have been found to affect the spatial extent and localization of the positron surface state wave function and annihilation probabilities of surface trapped positrons with relevant core electrons. Theoretical results are compared with experimental data obtained from studies of oxidation of the Cu(100) surface using positron annihilation induced Auger electron spectroscopy (PAES). It has been shown that positron annihilation probabilities with Cu 3s and 3p core electrons decrease when total (on-surface and sub-surface) oxygen coverage of the Cu(100) surface increases up to 1 ML. The calculations show that for high oxygen coverage when total oxygen coverage is 1. 5 ML the positron is not bound to the surface.

The trapping of K and Na atoms by a clean W(110) surface. Dynamic trajectory calculations. ch.3

International Nuclear Information System (INIS)

Hurkmans, A.; Overbosch, E.G.; Los, J.

1976-01-01

The fraction of K and Na atoms which are initially trapped by a clean W(110) surface has been measured as a function of incident energy (0.5 < approximately Esub(i) < approximately 15 eV) at several angles of incidence. At the same time the desorption energies Qsub(i) of the trapped potassium and sodium atoms were measured: Qsub(i) = 2.05 +- 0.02 eV and Qsub(i) = 2.60 +- 0.04 eV respectively. The measured trapping probabilities can be described well by Trillings 'partially screened spherical cap' model, except fos the small angles of incidence. Dynamic trajectory calculations were performed for a particle scattered from a diatomic molecule to explain the screening and the descrepancy at normal incidence. The calculations give good quantitative agreement with the measured trapping probability at small angles both for potassium and sodium atoms and show that simultaneous interaction with two adjacent surface atoms affects the trapping particularly at small angles of incidence. (Auth.)

Trapped atomic ions for quantum-limited metrology

Science.gov (United States)

Wineland, David

2017-04-01

Laser-beam-manipulated trapped ions are a candidate for large-scale quantum information processing and quantum simulation but the basic techniques used can also be applied to quantum-limited metrology and sensing. Some examples being explored at NIST are: 1) As charged harmonic oscillators, trapped ions can be used to sense electric fields; this can be used to characterize the electrode-surface-based noisy electric fields that compromise logic-gate fidelities and may eventually be used as a tool in surface science. 2) Since typical qubit logic gates depend on state-dependent forces, we can adapt the gate dynamics to sensitively detect additional forces. 3) We can use extensions of Bell inequality measurements to further restrict the degree of local realism possessed by Bell states. 4) We also briefly describe experiments for creation of Bell states using Hilbert space engineering. This work is a joint effort including the Ion-Storage group, the Quantum processing group, and the Computing and Communications Theory group at NIST, Boulder. Supported by IARPA, ONR, and the NIST Quantum Information Program.

The nature and role of trap states in a dendrimer-based organic field-effect transistor explosive sensor

Science.gov (United States)

Tang, Guoqiang; Chen, Simon S. Y.; Lee, Kwan H.; Pivrikas, Almantas; Aljada, Muhsen; Burn, Paul L.; Meredith, Paul; Shaw, Paul E.

2013-06-01

We report the fabrication and charge transport characterization of carbazole dendrimer-based organic field-effect transistors (OFETs) for the sensing of explosive vapors. After exposure to para-nitrotoluene (pNT) vapor, the OFET channel carrier mobility decreases due to trapping induced by the absorbed pNT. The influence of trap states on transport in devices before and after exposure to pNT vapor has been determined using temperature-dependent measurements of the field-effect mobility. These data clearly show that the absorption of pNT vapor into the dendrimer active layer results in the formation of additional trap states. Such states inhibit charge transport by decreasing the density of conducting states.

Positron probes of the Ge(1 0 0) surface: The effects of surface reconstructions and electron-positron correlations on positron trapping and annihilation characteristics

International Nuclear Information System (INIS)

Fazleev, N.G.; Jung, E.; Weiss, A.H.

2007-01-01

Positron annihilation induced Auger electron spectroscopy (PAES) has been applied to study the Ge(1 0 0) surface. The high-resolution PAES spectrum from the Ge(1 0 0) surface displays several strong Auger peaks corresponding to M 4,5 N 1 N 2,3 , M 2,3 M 4,5 M 4,5 , M 2,3 M 4,5 V and M 1 M 4,5 M 4,5 Auger transitions. The integrated peak intensities of Auger transitions are used to obtain experimental annihilation probabilities for the Ge 3d and 3p core level electrons. These experimental results are analyzed by performing calculations of positron surface states and annihilation characteristics of surface trapped positrons with relevant Ge core-level electrons for the non-reconstructed and reconstructed Ge(1 0 0)-p(2 x 1), Ge(1 0 0)-p(2 x 2) and Ge(1 0 0)-c(4 x 2) surfaces. It is found that the positron surface state wave function extends into the Ge lattice in the regions where atoms are displaced from their ideal terminated positions due to reconstructions. Estimates of the positron binding energy and the positron annihilation characteristics reveal their sensitivity to the specific atomic structure of the topmost layers of Ge(1 0 0). A comparison with PAES data reveals an agreement with theoretical core annihilation probabilities for the Auger transitions considered

Modification of dispersibility of nanodiamond by grafting of polyoxyethylene and by the introduction of ionic groups onto the surface via radical trapping

International Nuclear Information System (INIS)

Cha, I.; Hashimoto, K.; Fujiki, K.; Yamauchi, T.; Tsubokawa, N.

2014-01-01

To improve the dispersibility of polycrystalline nanodiamond (ND) in solvents, the grafting of polymers and introduction of ionic groups onto ND surface via radical trapping by ND surface were investigated. The grafting of polyoxyethylene (POE) onto ND surface by trapping of POE radicals formed by the thermal decomposition of POE macro azo-initiator (Azo-POE) was examined. The polymer radicals formed by the thermal decomposition of Azo-POE were successfully trapped by ND surface to give POE-grafted ND. The effect of temperature on the grafting of POE onto ND was discussed. In addition, the introduction of cationic protonated amidine groups onto ND was achieved by the trapping of radicals bearing protonated amidine groups formed by thermal decomposition of 2,2′-azobis(2-methylpropionamidine)dihydrochloride (AMPA). The anionic carboxylate groups was introduced onto ND surface by the trapping of the radicals bearing carboxyl groups formed by thermal decomposition of 4,4′-azobis(4-cyonovaleric acid) (ACVA) followed by the treatment with NaOH aqueous solution. The dispersibility of ND in water was remarkably improved by the grafting of POE, based on the steric hindrance of polymer chains and by the introduction of ionic groups, based on the ionic repulsion, onto ND surface. - Highlights: • Grafting of PEG onto nanodiamond was achieved by radical trapping. • Introduction of ionic groups onto nanodiamond was achieved by radical trapping. • Nanodiamond was dispersed by PEG grafting based on steric hindrance of PEG chains. • Nanodiamond was dispersed by introduction of ionic groups based on ionic repulsion

Modification of dispersibility of nanodiamond by grafting of polyoxyethylene and by the introduction of ionic groups onto the surface via radical trapping

Energy Technology Data Exchange (ETDEWEB)

Cha, I. [Graduate School of Science and Technology, Niigata University, 8050, Ikarashi, 2-no-cho, Nishi-ku, Niigata 950-2181 (Japan); Hashimoto, K. [Department of Material Science and Technology, Faculty of Engineering, Niigata University, 8050, Ikarashi, 2-no-cho, Nishi-ku, Niigata 950-218 (Japan); Fujiki, K. [Department of Environmental Science, Niigata Institute of Technology, 1719, Fujihashi, Kashiwazaki, Niigata 945-1195 (Japan); Yamauchi, T. [Graduate School of Science and Technology, Niigata University, 8050, Ikarashi, 2-no-cho, Nishi-ku, Niigata 950-2181 (Japan); Department of Material Science and Technology, Faculty of Engineering, Niigata University, 8050, Ikarashi, 2-no-cho, Nishi-ku, Niigata 950-218 (Japan); Tsubokawa, N., E-mail: ntsuboka@eng.niigata-u.ac.jp [Graduate School of Science and Technology, Niigata University, 8050, Ikarashi, 2-no-cho, Nishi-ku, Niigata 950-2181 (Japan); Department of Material Science and Technology, Faculty of Engineering, Niigata University, 8050, Ikarashi, 2-no-cho, Nishi-ku, Niigata 950-218 (Japan)

2014-02-14

To improve the dispersibility of polycrystalline nanodiamond (ND) in solvents, the grafting of polymers and introduction of ionic groups onto ND surface via radical trapping by ND surface were investigated. The grafting of polyoxyethylene (POE) onto ND surface by trapping of POE radicals formed by the thermal decomposition of POE macro azo-initiator (Azo-POE) was examined. The polymer radicals formed by the thermal decomposition of Azo-POE were successfully trapped by ND surface to give POE-grafted ND. The effect of temperature on the grafting of POE onto ND was discussed. In addition, the introduction of cationic protonated amidine groups onto ND was achieved by the trapping of radicals bearing protonated amidine groups formed by thermal decomposition of 2,2′-azobis(2-methylpropionamidine)dihydrochloride (AMPA). The anionic carboxylate groups was introduced onto ND surface by the trapping of the radicals bearing carboxyl groups formed by thermal decomposition of 4,4′-azobis(4-cyonovaleric acid) (ACVA) followed by the treatment with NaOH aqueous solution. The dispersibility of ND in water was remarkably improved by the grafting of POE, based on the steric hindrance of polymer chains and by the introduction of ionic groups, based on the ionic repulsion, onto ND surface. - Highlights: • Grafting of PEG onto nanodiamond was achieved by radical trapping. • Introduction of ionic groups onto nanodiamond was achieved by radical trapping. • Nanodiamond was dispersed by PEG grafting based on steric hindrance of PEG chains. • Nanodiamond was dispersed by introduction of ionic groups based on ionic repulsion.

Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

Science.gov (United States)

Zhi, Jiang; Yi-Qi, Zhuang; Cong, Li; Ping, Wang; Yu-Qi, Liu

2016-02-01

Trap-assisted tunneling (TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor (TFET). In this paper, we assess subthreshold performance of double gate TFET (DG-TFET) through a band-to-band tunneling (BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile (Dit) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).

Relevance of sub-surface chip layers for the lifetime of magnetically trapped atoms

DEFF Research Database (Denmark)

Zhang, H. B.; Henkel, C; Haller, E.

2005-01-01

on the thickness of that layer, as long as the layers below have a much smaller conductivity; essentially the same magnetic noise would be obtained with a metallic membrane suspended in vacuum. Based on our theory we give general scaling laws of how to reduce the effect of surface magnetic noise on the trapped...... measurements where the center of a side guide trap is laterally shifted with respect to the current carrying wire using additional bias fields. Comparing the experiment to theory, we find a fair agreement and demonstrate that for a chip whose topmost layer is metallic, the magnetic noise depends essentially...

Potential Energy Surface of NO on Pt(997: Adsorbed States and Surface Diffusion

Directory of Open Access Journals (Sweden)

N. Tsukahara

2012-01-01

Full Text Available The potential energy surface (PES of NO on Pt(997 has been elucidated: the adsorption states and diffusion processes of NO on Pt(997 at low coverage were investigated by using infrared reflection absorption spectroscopy (IRAS and scanning tunneling microscopy (STM. When NO molecules adsorb on a surface at a low temperature (11 K, each molecule transiently migrates on the surface from the first impact point to a possible adsorption site. We found that there are four stable adsorption sites for NO on Pt(997: a bridge site of the upper step, an fcc- (or hcp- hollow site of the terrace, an on-top site of the terrace, and an fcc-hollow site of the lower step. At higher temperatures above 45 K, NO molecules start to migrate thermally to more stable adsorption sites on a terrace, and they are finally trapped at the bridge sites of the step, which are the most stable among the four sites.

Changes in the surface electronic states of semiconductor fine particles induced by high energy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Yamaki, Tetsuya; Asai, Keisuke; Ishigure, Kenkichi [Tokyo Univ. (Japan); Shibata, Hiromi

1997-03-01

The changes in the surface electronic states of Q-sized semiconductor particles in Langmuir-Blodgett (LB) films, induced by high energy ion irradiation, were examined by observation of ion induced emission and photoluminescence (PL). Various emission bands attributed to different defect sites in the band gap were observed at the initial irradiation stage. As the dose increased, the emissions via the trapping sites decreased in intensity while the band-edge emission developed. This suggests that the ion irradiation would remove almost all the trapping sites in the band gap. The low energy emissions, which show a multiexponential decay, were due to a donor-acceptor recombination between the deeply trapped carriers. It was found that the processes of formation, reaction, and stabilization of the trapping sites would predominantly occur under the photooxidizing conditions. (author)

Internal state distributions of molecules scattering and desorbing from surfaces

International Nuclear Information System (INIS)

Auerbach, D.J.

1983-01-01

Attempts are made to interpret scattering experiments of NO molecules on Ag(111) where a (rotational) state-specific detector has been used. A model using an anisotropic potential is proposed to explain the observed incoming energy- and angle dependence. The so-called rotational rainbows are explained. It is concluded, that in this way information on intermolecular potentials and the transfer of translational to rotational energy in the dynamics of trapping and sticking of molecules on surfaces can be extracted. (G.Q.)

Long charged macromolecule in an entropic trap with rough surfaces.

Science.gov (United States)

Mamasakhlisov, Yevgeni Sh; Hayryan, Shura; Hu, Chin-Kun

2012-11-01

The kinetics of the flux of a charged macromolecular solution through an environment of changing geometry with wide and constricted regions is investigated analytically. A model device consisting of alternating deep and shallow slits known as an "entropic trap" is used to represent the environment. The flux is supported by the external electrostatic field. The "wormlike chain" model is used for the macromolecule (dsDNA in the present study). The chain entropy in both the deep and the shallow slits, the work by the electric field, and the energy of the elastic bending of the chain are taken into account accurately. Based on the calculated free energy, the kinetics and the scaling behavior of the chain escaping from the entropic trap are studied. We find that the escape process occurs in two kinetic stages with different time scales and discuss the possible influence of the surface roughness. The scope of the accuracy of the proposed model is discussed.

On the geodesic incompleteness of spacetimes containing marginally (outer) trapped surfaces

International Nuclear Information System (INIS)

Costa e Silva, I P

2012-01-01

In a recent paper, Eichmair et al (2012 arXiv:1204.0278v1) have proved a Gannon–Lee-type singularity theorem based on the existence of marginally outer trapped surfaces (MOTS) on noncompact initial data sets for globally hyperbolic spacetimes. A natural question is whether the corresponding incomplete geodesics could still be complete in a possible non-globally hyperbolic extension of spacetime. In this paper, some variants of their result are given with weaker causality assumptions, thus suggesting that the answer is generically negative, at least if the putative extension has no closed timelike curves. We consider first marginally trapped surfaces (MTS) in chronological spacetimes, introducing the natural notion of a generic MTS, a notion also applicable to MOTS. In particular, a Hawking–Penrose-type singularity theorem is proven in chronological spacetimes with dimension n ⩾ 3 containing a generic MTS. Such surfaces naturally arise as cross-sections of quasi-local generalizations of black hole horizons, such as dynamical and trapping horizons, and we discuss some natural conditions which ensure the existence of MTS in initial data sets. Nevertheless, much of the more recent literature has focused on MOTS rather than MTS as quasi-local substitutes for the description of black holes, as they are arguably more natural and easier to handle in a number of situations. It is therefore pertinent to ask to what extent one can deduce the existence of singularities in the presence of MOTS alone. We address this issue and show that singularities indeed arise in the presence of generic MOTS, but under slightly stronger causal conditions than those in the case of MTS (specifically, for causally simple spacetimes). On the other hand, we show that with additional conditions on the MOTS itself, namely that it is either the boundary of a compact spatial region, or strictly stable in a suitable sense, a Penrose–Hawking-type singularity theorem can still be established for

Surface Traps in Colloidal Quantum Dot Solar Cells, their Mitigation and Impact on Manufacturability

KAUST Repository

Kirmani, Ahmad R.

2017-01-01

charge transport and threaten their otherwise wonderful optoelectronic properties. Surface traps have also, indirectly, impeded scalable and industry-compatible fabrication of these solar cells, as all of the reports, to date, have relied on spin

Cold atoms in microscopic traps: from wires to chips

International Nuclear Information System (INIS)

Cassettari, D.

2000-05-01

This thesis reports on the experimental demonstration of magnetic guides, traps and beam splitters for neutral atoms using current carrying wires. A straight wire allows to create two basic guide configurations: the magnetic field generated by the wire alone produces a guide where atoms in a strong field seeking state perform orbits around the wire (Kepler guide); by adding an external magnetic field, atoms in a weak field seeking state are guided at the location where the external field and the field generated by the wire cancel out (side guide). Furthermore, bending the wire in various shapes allows to modify the side guide potential and hence to create a large variety of three dimensional traps. A relevant property of these potentials is that higher trapping gradients are obtained by decreasing the current flowing in the wires. As the trap is compressed, it also moves closer to the wire. This feature has allowed us to create microscopic potentials by using thin wires designed on a surface (atom chip) by means of high resolution microfabrication techniques. Wires mounted on a surface have the advantage of being more robust and able to sustain larger currents due to their thermal coupling with the substrate. In our experiment we have developed methods to load these traps and guides with laser cooled atoms. Our first investigations have been performed with free standing wires which we have used to study the Kepler guide, the side guide and a three dimensional Ioffe-Pritchard trap. In the latter we have achieved the trapping parameters required in the experiments with Bose-Einstein condensates with much reduced power consumption. In a second time we have replaced the free standing wires with an atom chip, which we have used to compress the atomic cloud in potentials with trap frequencies above 100 kHz and ground state sizes below 100 nm. Such potentials are especially interesting for quantum information proposals of performing quantum gate operations with controlled

Trapping and stabilization of hydrogen atoms in intracrystalline voids. Defected calcium fluorides and Y zeolite surfaces

International Nuclear Information System (INIS)

Iton, L.E.; Turkevich, J.

1978-01-01

Using EPR spectroscopy, it has been established that H. atoms are absorbed from the gas phase when CaF 2 powder is exposed to H 2 gas in which a microwave discharge is sustained, being trapped in sites that provide unusual thermal stability. The disposition of the trapped atoms is determined by the occluded water content of the CaF 2 . For ultrapure CaF 2 , atoms are trapped in interstitial sites having A 0 = 1463 MHz; for increasing water content, two types of trapped H. atoms are discriminated, with preferential trapping in void sites (external to the regular fluorite lattice) that are associated with the H 2 O impurity. Characterization of these ''extra-lattice'' H. (and D.) atoms is presented, and their EPR parameters and behavior are discussed in detail. Failure to effect H.-D. atom exchange with D 2 gas suggests that atoms are not stabilized on the CaF 2 surface. H. atoms are trapped exclusively in ''extra-lattice'' sites when the water-containing CaF 2 is γ irradiated at 77 or 298 K indicating that the scission product atoms do not escape from the precursor void region into the regular lattice. It is concluded that the thermal stability of the ''extra-lattice'' atoms, like that of the interstitial atoms, is determined ultimately by the high activation energy for diffusion of the H. atom through the CaF 2 lattice. For comparison, results obtained from H. atoms trapped in γ-irradiated rare earth ion-exchanged Y zeolites are presented and discussed also; these ''surface'' trapped atoms do not exhibit great thermalstability. Distinctions in the H. atom formation mechanisms between the fluorides and the zeolites were deduced from the accompanying paramagnetic species formed. The intracavity electric fields in the Y zeolites have been estimated from the H. atoms hfsc contractions, and are found to be very high, about 1 V/A

Positron probes of the Ge(1 0 0) surface: The effects of surface reconstructions and electron-positron correlations on positron trapping and annihilation characteristics

Energy Technology Data Exchange (ETDEWEB)

Fazleev, N.G. [Department of Physics, University of Texas at Arlington, Box 19059, Arlington, TX 76019-0059 (United States) and Department of Physics, Kazan State University, Kazan 420008 (Russian Federation)]. E-mail: Fazleev@uta.edu; Jung, E. [Department of Physics, University of Texas at Arlington, Box 19059, Arlington, TX 76019-0059 (United States); Weiss, A.H. [Department of Physics, University of Texas at Arlington, Box 19059, Arlington, TX 76019-0059 (United States)

2007-08-15

Positron annihilation induced Auger electron spectroscopy (PAES) has been applied to study the Ge(1 0 0) surface. The high-resolution PAES spectrum from the Ge(1 0 0) surface displays several strong Auger peaks corresponding to M{sub 4,5}N{sub 1}N{sub 2,3}, M{sub 2,3}M{sub 4,5}M{sub 4,5}, M{sub 2,3}M{sub 4,5}V and M{sub 1}M{sub 4,5}M{sub 4,5} Auger transitions. The integrated peak intensities of Auger transitions are used to obtain experimental annihilation probabilities for the Ge 3d and 3p core level electrons. These experimental results are analyzed by performing calculations of positron surface states and annihilation characteristics of surface trapped positrons with relevant Ge core-level electrons for the non-reconstructed and reconstructed Ge(1 0 0)-p(2 x 1), Ge(1 0 0)-p(2 x 2) and Ge(1 0 0)-c(4 x 2) surfaces. It is found that the positron surface state wave function extends into the Ge lattice in the regions where atoms are displaced from their ideal terminated positions due to reconstructions. Estimates of the positron binding energy and the positron annihilation characteristics reveal their sensitivity to the specific atomic structure of the topmost layers of Ge(1 0 0). A comparison with PAES data reveals an agreement with theoretical core annihilation probabilities for the Auger transitions considered.

Nanoscale Trapping and Squeeze-Out of Confined Alkane Monolayers.

Science.gov (United States)

Gosvami, N N; O'Shea, S J

2015-12-01

We present combined force curve and conduction atomic force microscopy (AFM) data for the linear alkanes CnH2n+2 (n = 10, 12, 14, 16) confined between a gold-coated AFM tip and a graphite surface. Solvation layering is observed in the force curves for all liquids, and conduction AFM is used to study in detail the removal of the confined (mono)layer closest to the graphite surface. The squeeze-out behavior of the monolayer can be very different depending upon the temperature. Below the monolayer melting transition temperatures the molecules are in an ordered state on the graphite surface, and fast and complete removal of the confined molecules is observed. However, above the melting transition temperature the molecules are in a disordered state, and even at large applied pressure a few liquid molecules are trapped within the tip-sample contact zone. These findings are similar to a previous study for branched alkanes [ Gosvami Phys. Rev. Lett. 2008, 100, 076101 ], but the observation for the linear alkane homologue series demonstrates clearly the dependence of the squeeze-out and trapping on the state of the confined material.

Trapping time of excitons in Si nanocrystals embedded in a SiO2 matrix

Science.gov (United States)

de Jong, E. M. L. D.; de Boer, W. D. A. M.; Yassievich, I. N.; Gregorkiewicz, T.

2017-05-01

Silicon (Si) nanocrystals (NCs) are of great interest for many applications, ranging from photovoltaics to optoelectonics. The photoluminescence quantum yield of Si NCs dispersed in SiO2 is limited, suggesting the existence of very efficient processes of nonradiative recombination, among which the formation of a self-trapped exciton state on the surface of the NC. In order to improve the external quantum efficiency of these systems, the carrier relaxation and recombination need to be understood more thoroughly. For that purpose, we perform transient-induced absorption spectroscopy on Si NCs embedded in a SiO2 matrix over a broad probe range for NCs of average sizes from 2.5 to 5.5 nm. The self-trapping of free excitons on surface-related states is experimentally and theoretically discussed and found to be dependent on the NC size. These results offer more insight into the self-trapped exciton state and are important to increase the optical performance of Si NCs.

Entanglement and quantum state transfer between two atoms trapped in two indirectly coupled cavities

Science.gov (United States)

Zheng, Bin; Shen, Li-Tuo; Chen, Ming-Feng

2016-05-01

We propose a one-step scheme for implementing entanglement generation and the quantum state transfer between two atomic qubits trapped in two different cavities that are not directly coupled to each other. The process is realized through engineering an effective asymmetric X-Y interaction for the two atoms involved in the gate operation and an auxiliary atom trapped in an intermediate cavity, induced by virtually manipulating the atomic excited states and photons. We study the validity of the scheme as well as the influences of the dissipation by numerical simulation and demonstrate that it is robust against decoherence.

Effects of surface states on device and interconnect isolation in GaAs MESFET and InP MISFET integrated circuits

International Nuclear Information System (INIS)

Hasegawa, H.; Kitagawa, T.; Masuda, H.; Yano, H.; Ohno, H.

1985-01-01

Surface electrical breakdown and side-gating which cause failure of device and interconnect isolation are investigated for GaAs MESFET and InP MISFET integrated circuit structures. Striking differences in behavior are observed between GaAs and InP as regards to the surface conduction, surface breakdown and side-gating. These differences are shown to be related to the surface state properties of the insulator-semiconductor interface. In GaAs, high density of surface states rather than bulk trap states control the surface I-V characteristics and side-gating, causing serious premature avalanche breakdown and triggering side-gating at a low nominal field intensity of 1-3 kV/cm. On the other hand, InP MISFET integrated circuits are virtually free from these premature breakdown and side-gating effect under normal dark operating condition because of very low surface state density

Quantum technologies for solid state physics using cold trapped ions

International Nuclear Information System (INIS)

Ferdinand Schmidt-Kaler

2014-01-01

The quantum states of ions are perfectly controlled, and may be used for fundamental research in quantum physics, as highlighted by the Nobel Prize given to Dave Wineland in 2012. Two directions of quantum technologies, followed by the Mainz group, have high impact on solid state physics: I) The delivery of single cold ions on demand for the deterministic doping of solid state materials with nm spatial precision to generate design-structures optimized for quantum processors. II) The simulation of solid state relevant Hamiltonians with AMO systems of one or two dimensional arrays of trapped ions. I will talk about the recent progress in both fields. http://www.quantenbit.de/#Number Sign#/publications/(author)

Isolated, slowly evolving, and dynamical trapping horizons: Geometry and mechanics from surface deformations

International Nuclear Information System (INIS)

Booth, Ivan; Fairhurst, Stephen

2007-01-01

We study the geometry and dynamics of both isolated and dynamical trapping horizons by considering the allowed variations of their foliating two-surfaces. This provides a common framework that may be used to consider both their possible evolutions and their deformations as well as derive the well-known flux laws. Using this framework, we unify much of what is already known about these objects as well as derive some new results. In particular we characterize and study the ''almost isolated'' trapping horizons known as slowly evolving horizons. It is for these horizons that a dynamical first law holds and this is analogous and closely related to the Hawking-Hartle formula for event horizons

Spin resonance with trapped ions

Energy Technology Data Exchange (ETDEWEB)

Wunderlich, Ch; Balzer, Ch; Hannemann, T; Mintert, F; Neuhauser, W; Reiss, D; Toschek, P E [Institut fuer Laser-Physik, Universitaet Hamburg, Jungiusstrasse 9, 20355 Hamburg (Germany)

2003-03-14

A modified ion trap is described where experiments (in particular related to quantum information processing) that usually require optical radiation can be carried out using microwave or radio frequency electromagnetic fields. Instead of applying the usual methods for coherent manipulation of trapped ions, a string of ions in such a modified trap can be treated like a molecule in nuclear magnetic resonance experiments taking advantage of spin-spin coupling. The collection of trapped ions can be viewed as an N-qubit molecule with adjustable spin-spin coupling constants. Given N identically prepared quantum mechanical two-level systems (qubits), the optimal strategy to estimate their quantum state requires collective measurements. Using the ground state hyperfine levels of electrodynamically trapped {sup 171}Yb{sup +}, we have implemented an adaptive algorithm for state estimation involving sequential measurements on arbitrary qubit states.

Spin resonance with trapped ions

International Nuclear Information System (INIS)

Wunderlich, Ch; Balzer, Ch; Hannemann, T; Mintert, F; Neuhauser, W; Reiss, D; Toschek, P E

2003-01-01

A modified ion trap is described where experiments (in particular related to quantum information processing) that usually require optical radiation can be carried out using microwave or radio frequency electromagnetic fields. Instead of applying the usual methods for coherent manipulation of trapped ions, a string of ions in such a modified trap can be treated like a molecule in nuclear magnetic resonance experiments taking advantage of spin-spin coupling. The collection of trapped ions can be viewed as an N-qubit molecule with adjustable spin-spin coupling constants. Given N identically prepared quantum mechanical two-level systems (qubits), the optimal strategy to estimate their quantum state requires collective measurements. Using the ground state hyperfine levels of electrodynamically trapped 171 Yb + , we have implemented an adaptive algorithm for state estimation involving sequential measurements on arbitrary qubit states

Lenr:. Superfluids, Self-Trapping and Non-Self States

Science.gov (United States)

Chubb, Talbot A.

2005-12-01

LENR ion band state models involve deuteron many-body systems resembling superfluids. The physics of atom Bose-Einstein condensates in optical lattices teaches that superfluid behavior occurs when the potential barriers between adjacent potential wells permit high tunneling rates and the well potentials are shallow. These superfluids have fractional occupation of individual wells. Well periodic symmetry is not affected by the presence of the atoms. This behavior suggests that deuterons in a lattice should be in non-self-trapping sites, which may indicate that D+Bloch occupies the Pd tetrahedral sites.

Control of trapped-ion quantum states with optical pulses

International Nuclear Information System (INIS)

Rangan, C.; Monroe, C.; Bucksbaum, P.H.; Bloch, A.M.

2004-01-01

We present new results on the quantum control of systems with infinitely large Hilbert spaces. A control-theoretic analysis of the control of trapped-ion quantum states via optical pulses is performed. We demonstrate how resonant bichromatic fields can be applied in two contrasting ways--one that makes the system completely uncontrollable and the other that makes the system controllable. In some interesting cases, the Hilbert space of the qubit-harmonic oscillator can be made finite, and the Schroedinger equation controllable via bichromatic resonant pulses. Extending this analysis to the quantum states of two ions, a new scheme for producing entangled qubits is discovered

Quantum dots use both LUMO and surface trap electrons in photoreduction process

Energy Technology Data Exchange (ETDEWEB)

Darżynkiewicz, Zbigniew M. [Centre of New Technologies, University of Warsaw, Banacha 2c, 02-097 Warsaw (Poland); Division of Biophysics, Faculty of Physics, University of Warsaw, Żwirki i Wigury 93, 02-089 Warsaw (Poland); Pędziwiatr, Marta [Institute of Physics PAS, al. Lotników 32/46, 02-668 Warsaw (Poland); Grzyb, Joanna, E-mail: jgrzyb@ifpan.edu.pl [Institute of Physics PAS, al. Lotników 32/46, 02-668 Warsaw (Poland)

2017-03-15

Here, we explore a mechanism of quantum dots related photoreduction of two redox-active proteins, cytochrome c and ferredoxin, by detailed analysis of fluorescence decay and reconstruction of time-resolved emission spectra (TRES). We used two types of cadmium telluride quantum dots, with diameters of 2.6 nm and 3.9 nm and maximum emissions at 550 nm and at 650 nm, respectively, which are known to be able to reduce proteins with different efficiencies. First, we observed that for a pure quantum dots solution, the fluorescence decay can be well fitted by three components. The average fluorescence lifetimes, as well as separate time constants, depend on the nanocrystal diameter. In the presence of proteins, fluorescence decay is faster and cytochrome c has a greater impact than ferredoxin. The TRES experiment showed that a fraction of the medium τ decay component is dominant in a pure quantum dot solution, with the maximum corresponding to the steady-state spectrum. The addition of ferredoxin does not change this pattern, while the presence of cytochrome c strongly promotes the shortest τ. Additionally, potassium iodide titration experiments were used to verify the origin of individual decay components. We propose that reduction occurs by electron transfer from both conductive band and surface trap states.

Simulating the performance of a distance-3 surface code in a linear ion trap

Science.gov (United States)

Trout, Colin J.; Li, Muyuan; Gutiérrez, Mauricio; Wu, Yukai; Wang, Sheng-Tao; Duan, Luming; Brown, Kenneth R.

2018-04-01

We explore the feasibility of implementing a small surface code with 9 data qubits and 8 ancilla qubits, commonly referred to as surface-17, using a linear chain of 171Yb+ ions. Two-qubit gates can be performed between any two ions in the chain with gate time increasing linearly with ion distance. Measurement of the ion state by fluorescence requires that the ancilla qubits be physically separated from the data qubits to avoid errors on the data due to scattered photons. We minimize the time required to measure one round of stabilizers by optimizing the mapping of the two-dimensional surface code to the linear chain of ions. We develop a physically motivated Pauli error model that allows for fast simulation and captures the key sources of noise in an ion trap quantum computer including gate imperfections and ion heating. Our simulations showed a consistent requirement of a two-qubit gate fidelity of ≥99.9% for the logical memory to have a better fidelity than physical two-qubit operations. Finally, we perform an analysis of the error subsets from the importance sampling method used to bound the logical error rates to gain insight into which error sources are particularly detrimental to error correction.

Classical states of an electric dipole in an external magnetic field: Complete solution for the center of mass and trapped states

Energy Technology Data Exchange (ETDEWEB)

Atenas, Boris; Pino, Luis A. del; Curilef, Sergio, E-mail: scurilef@ucn.cl

2014-11-15

We study the classical behavior of an electric dipole in the presence of a uniform magnetic field. Using the Lagrangian formulation, we obtain the equations of motion, whose solutions are represented in terms of Jacobi functions. We also identify two constants of motion, namely, the energy E and a pseudomomentumC{sup →}. We obtain a relation between the constants that allows us to suggest the existence of a type of bound states without turning points, which are called trapped states. These results are consistent with and complementary to previous results. - Highlights: • Bound states without turning points. • Lagrangian Formulation for an electric dipole in a magnetic field. • Motion of the center of mass and trapped states. • Constants of motion: pseudomomentum and energy.

Andreev Bound States Formation and Quasiparticle Trapping in Quench Dynamics Revealed by Time-Dependent Counting Statistics.

Science.gov (United States)

Souto, R Seoane; Martín-Rodero, A; Yeyati, A Levy

2016-12-23

We analyze the quantum quench dynamics in the formation of a phase-biased superconducting nanojunction. We find that in the absence of an external relaxation mechanism and for very general conditions the system gets trapped in a metastable state, corresponding to a nonequilibrium population of the Andreev bound states. The use of the time-dependent full counting statistics analysis allows us to extract information on the asymptotic population of even and odd many-body states, demonstrating that a universal behavior, dependent only on the Andreev state energy, is reached in the quantum point contact limit. These results shed light on recent experimental observations on quasiparticle trapping in superconducting atomic contacts.

Metastable self-trapping of positrons in MgO

Science.gov (United States)

Monge, M. A.; Pareja, R.; González, R.; Chen, Y.

1997-01-01

Low-temperature positron annihilation measurements have been performed on MgO single crystals containing either cation or anion vacancies. The temperature dependence of the S parameter is explained in terms of metastable self-trapped positrons which thermally hop through the crystal lattice. The experimental results are analyzed using a three-state trapping model assuming transitions from both delocalized and self-trapped states to deep trapped states at vacancies. The energy level of the self-trapped state was determined to be (62+/-5) meV above the delocalized state. The activation enthalpy for the hopping process of self-trapped positrons appears to depend on the kind of defect present in the crystals.

Excitation of surface waves of ultracold neutrons on absorbing trap walls as anomalous loss factor

International Nuclear Information System (INIS)

Bokun, R.Ch.

2006-01-01

One analyzed probability of excitation of surface waves of ultracold neutrons in terms of a plane model consisting of three media: vacuum, a finite depth neutron absorbing substance layer and a neutron reflecting substrate. One demonstrated the absence of the mentioned surface waves in terms of the generally accepted model of two media: vacuum contiguous to the plane surface of a substance filled half-space. One pointed out the effect of the excited surface waves of ultracold neutrons on the increase of their anomalous losses in traps [ru

Local charge trapping in Ge nanoclustersdetected by Kelvin probe force microscopy

Energy Technology Data Exchange (ETDEWEB)

Kondratenko, S.V., E-mail: kondr@univ.kiev.ua [Taras Shevchenko National University of Kyiv, 64/13 Volodymyrska Str., 01601, Kyiv (Ukraine); Lysenko, V.S. [Institute of Semiconductor Physics, 41 Prospect Nauki, 03028, Kyiv (Ukraine); Kozyrev, Yu. N. [O.O. Chuiko Institute of Surface Chemistry, 17 GeneralaNaumova Str. 03164, Kiev (Ukraine); Kratzer, M. [Institute of Physics, MontanuniversitätLeoben, Franz Josef Str. 18, A-8700, Leoben (Austria); Storozhuk, D.P.; Iliash, S.A. [Taras Shevchenko National University of Kyiv, 64/13 Volodymyrska Str., 01601, Kyiv (Ukraine); Czibula, C. [Institute of Physics, MontanuniversitätLeoben, Franz Josef Str. 18, A-8700, Leoben (Austria); Teichert, C., E-mail: teichert@unileoben.ac.at [Institute of Physics, MontanuniversitätLeoben, Franz Josef Str. 18, A-8700, Leoben (Austria)

2016-12-15

The understanding of local charge trapping on the nanoscale is crucial for the design of novel electronic devices and photodetectors based on SiGe nanoclusters (NCs). Here, the local spatial distribution of the surface potential of the Ge NCs was detected using Kelvin probe force microscopy (KPFM). Different surface potentials between Ge NCs and the wetting layer (WL) surface were detected at room temperature. Changes of the local contact potential differences (CPD) were studied after injection of electrons or holes into single Ge NCs on top of the Si layer using a conductive atomic force microscopy tip. The CPD image contrast was increased after electron injection by applying a forward bias to the n-tip/i-Ge NC/p-Si junction. Injecting holes into a single Ge NC was also accompanied by filling of two-dimensional states in the surrounding region, which is governed by leakage currents through WL or surface states and Coulomb charging effects. A long retention time of holes trapped by the Ge NC was found.

Macroscopic angular momentum states of Bose-Einstein condensates in toroidal traps

International Nuclear Information System (INIS)

Benakli, M.; Raghavan, S.; Fantoni, S.; Shenoy, S.R.; Smerzi, A.

1997-11-01

We consider a Bose-Einstein condensate (BEC) of N atoms of repulsive interaction ∼ U 0 , in an elliptical trap, axially pierced by a Gaussian-intensity laser beam, forming an effective (quasi-2D) toroidal trap with minimum at radial distance ρ = ρ p . The macroscopic angular momentum states Ψ l (ρ,θ) ∼ √NΦ l (ρ)e ilθ for integer l spread up to ρ max ∼ (NU 0 ) 1/4 >> ρ p . The spreading lowers rotational energies, so estimated low metastability barriers can support large l max ∼ (NU 0 ) 1/4 , l (ρ) 2 -Φ 0 (ρ) 2 is a signature of BEC rotation. Results are insensitive to off-axis laser displacements ρ 0 , for ρ 0 ρ max << 1. (author)

Enhanced light trapping by focused ion beam (FIB) induced self-organized nanoripples on germanium (100) surface

Science.gov (United States)

Kamaliya, Bhaveshkumar; Mote, Rakesh G.; Aslam, Mohammed; Fu, Jing

2018-03-01

In this paper, we demonstrate enhanced light trapping by self-organized nanoripples on the germanium surface. The enhanced light trapping leading to high absorption of light is confirmed by the experimental studies as well as the numerical simulations using the finite-difference time-domain method. We used gallium ion (Ga+) focused ion beam to enable the formation of the self-organized nanoripples on the germanium (100) surface. During the fabrication, the overlap of the scanning beam is varied from zero to negative value and found to influence the orientation of the nanoripples. Evolution of nanostructures with the variation of beam overlap is investigated. Parallel, perpendicular, and randomly aligned nanoripples with respect to the scanning direction are obtained via manipulation of the scanning beam overlap. 95% broadband absorptance is measured in the visible electromagnetic region for the nanorippled germanium surface. The reported light absorption enhancement can significantly improve the efficiency of germanium-silicon based photovoltaic systems.

Quantized motion of trapped ions

International Nuclear Information System (INIS)

Steinbach, J.

1999-01-01

This thesis is concerned with a theoretical and numerical study of the preparation and coherent manipulation of quantum states in the external and internal degrees of freedom of trapped ions. In its first part, this thesis proposes and investigates schemes for generating several nonclassical states for the quantized vibrational motion of a trapped ion. Based on dark state preparation specific laser excitation configurations are presented which, given appropriately chosen initial states, realize the desired motional states in the steady-state, indicated by the cessation of the fluorescence emitted by the ion. The focus is on the SU(1,1) intelligent states in both their single- and two-mode realization, corresponding to one- and two-dimensional motion of the ion. The presented schemes are also studied numerically using a Monte-Carlo state-vector method. The second part of the thesis describes how two vibrational degrees of freedom of a single trapped ion can be coupled through the action of suitably chosen laser excitation. Concentrating on a two-dimensional ion trap with dissimilar vibrational frequencies a variety of quantized two-mode couplings are derived. The focus is on a linear coupling that takes excitations from one mode to another. It is demonstrated how this can result in a state rotation, in which it is possible to coherently transfer the motional state of the ion between orthogonal directions without prior knowledge of that motional state. The third part of this thesis presents a new efficient method for generating maximally entangled internal states of a collection of trapped ions. The method is deterministic and independent of the number of ions in the trap. As the essential element of the scheme a mechanism for the realization of a controlled NOT operation that can operate on multiple ions is proposed. The potential application of the scheme for high-precision frequency standards is explored. (author)

Deuterium trapping in carbon fiber composites under high fluence

International Nuclear Information System (INIS)

Airapetov, A.A.; Begrambekov, L.B.; Kuzmin, A.A.; Shigin, P.A.; Zakharov, A.M.

2010-01-01

The paper is devoted to investigation of deuterium trapping in CFC, dance graphite MPG-8 and pyrolytic graphite (PG) under plasma ion- and electron irradiation. Number of specific features of deuterium trapping and retention under plasma ion and electron irradiation is presented and discussed. In particular it is shown that 1) deuterium trapping takes place even when energy of impinging ions approaches zero; 2) deuterium is trapped under irradiation by plasma electrons; 3) under irradiation at equal fluences deuterium trapping is higher, when ion flux is smaller. High energy ion penetrating the surfaces are trapped in the traps created at the expense of their kinetic energy. The process may be named 'kinetic trapping'. Under low energy (smaller than 200 eV) electron and/or ion irradiation the energy of inelastic interaction on the surface provides creation of active centers, which initiate dissociation of deuterium sorbed on the surface, penetration of deuterium atoms into graphite and their trapping in specific low energy traps. The term 'potential trapping' is proposed for this type of trapping. Under high energy irradiation such atoms can fill the traps formed through kinetic mechanism. Origination of moveable deuterium atoms from the layer of surface sorption seems to be time dependent process and it is a reason of increase of trapping along with irradiation time. New features of deuterium trapping and retention in graphite evaluated in this study offer new opportunities for analysis and correct estimation of hydrogen isotope trapping and retention in tokamaks having graphite tiles. (authors)

Trapped antihydrogen

Energy Technology Data Exchange (ETDEWEB)

Butler, E., E-mail: eoin.butler@cern.ch [CERN, Physics Department (Switzerland); Andresen, G. B. [Aarhus University, Department of Physics and Astronomy (Denmark); Ashkezari, M. D. [Simon Fraser University, Department of Physics (Canada); Baquero-Ruiz, M. [University of California, Department of Physics (United States); Bertsche, W. [Swansea University, Department of Physics (United Kingdom); Bowe, P. D. [Aarhus University, Department of Physics and Astronomy (Denmark); Cesar, C. L. [Universidade Federal do Rio de Janeiro, Instituto de Fisica (Brazil); Chapman, S. [University of California, Department of Physics (United States); Charlton, M.; Deller, A.; Eriksson, S. [Swansea University, Department of Physics (United Kingdom); Fajans, J. [University of California, Department of Physics (United States); Friesen, T.; Fujiwara, M. C. [University of Calgary, Department of Physics and Astronomy (Canada); Gill, D. R. [TRIUMF (Canada); Gutierrez, A. [University of British Columbia, Department of Physics and Astronomy (Canada); Hangst, J. S. [Aarhus University, Department of Physics and Astronomy (Denmark); Hardy, W. N. [University of British Columbia, Department of Physics and Astronomy (Canada); Hayden, M. E. [Simon Fraser University, Department of Physics (Canada); Humphries, A. J. [Swansea University, Department of Physics (United Kingdom); Collaboration: ALPHA Collaboration; and others

2012-12-15

Precision spectroscopic comparison of hydrogen and antihydrogen holds the promise of a sensitive test of the Charge-Parity-Time theorem and matter-antimatter equivalence. The clearest path towards realising this goal is to hold a sample of antihydrogen in an atomic trap for interrogation by electromagnetic radiation. Achieving this poses a huge experimental challenge, as state-of-the-art magnetic-minimum atom traps have well depths of only {approx}1 T ({approx}0.5 K for ground state antihydrogen atoms). The atoms annihilate on contact with matter and must be 'born' inside the magnetic trap with low kinetic energies. At the ALPHA experiment, antihydrogen atoms are produced from antiprotons and positrons stored in the form of non-neutral plasmas, where the typical electrostatic potential energy per particle is on the order of electronvolts, more than 10{sup 4} times the maximum trappable kinetic energy. In November 2010, ALPHA published the observation of 38 antiproton annihilations due to antihydrogen atoms that had been trapped for at least 172 ms and then released-the first instance of a purely antimatter atomic system confined for any length of time (Andresen et al., Nature 468:673, 2010). We present a description of the main components of the ALPHA traps and detectors that were key to realising this result. We discuss how the antihydrogen atoms were identified and how they were discriminated from the background processes. Since the results published in Andresen et al. (Nature 468:673, 2010), refinements in the antihydrogen production technique have allowed many more antihydrogen atoms to be trapped, and held for much longer times. We have identified antihydrogen atoms that have been trapped for at least 1,000 s in the apparatus (Andresen et al., Nature Physics 7:558, 2011). This is more than sufficient time to interrogate the atoms spectroscopically, as well as to ensure that they have relaxed to their ground state.

Trapped surfaces in monopole-like Cauchy data of Einstein-Yang-Mills-Higgs equations

International Nuclear Information System (INIS)

Malec, E.; Koc, P.

1989-08-01

We choose the nonabelian monopole solution of Bogomolny, Prasad and Sommerfield as a part of Cauchy data for the evolution of Einstein-Yang-Mills-Higgs equations. Momentarily static spherically symmetric data for gravitational fields are obtained numerically via the Lichnerowicz equation. In the case of generic scaling of fields we have found initial data with trapped surfaces. (author). 13 refs

Probing surface states in PbS nanocrystal films using pentacene field effect transistors: controlling carrier concentration and charge transport in pentacene.

Science.gov (United States)

Park, Byoungnam; Whitham, Kevin; Bian, Kaifu; Lim, Yee-Fun; Hanrath, Tobias

2014-12-21

We used a bilayer field effect transistor (FET) consisting of a thin PbS nanocrystals (NCs) film interfaced with vacuum-deposited pentacene to probe trap states in NCs. We interpret the observed threshold voltage shift in context of charge carrier trapping by PbS NCs and relate the magnitude of the threshold voltage shift to the number of trapped carriers. We explored a series of NC surface ligands to modify the interface between PbS NCs and pentacene and demonstrate the impact of interface chemistry on charge carrier density and the FET mobility in a pentacene FET.

Surface transport and stable trapping of particles and cells by an optical waveguide loop.

Science.gov (United States)

Hellesø, Olav Gaute; Løvhaugen, Pål; Subramanian, Ananth Z; Wilkinson, James S; Ahluwalia, Balpreet Singh

2012-09-21

Waveguide trapping has emerged as a useful technique for parallel and planar transport of particles and biological cells and can be integrated with lab-on-a-chip applications. However, particles trapped on waveguides are continuously propelled forward along the surface of the waveguide. This limits the practical usability of the waveguide trapping technique with other functions (e.g. analysis, imaging) that require particles to be stationary during diagnosis. In this paper, an optical waveguide loop with an intentional gap at the centre is proposed to hold propelled particles and cells. The waveguide acts as a conveyor belt to transport and deliver the particles/cells towards the gap. At the gap, the diverging light fields hold the particles at a fixed position. The proposed waveguide design is numerically studied and experimentally implemented. The optical forces on the particle at the gap are calculated using the finite element method. Experimentally, the method is used to transport and trap micro-particles and red blood cells at the gap with varying separations. The waveguides are only 180 nm thick and thus could be integrated with other functions on the chip, e.g. microfluidics or optical detection, to make an on-chip system for single cell analysis and to study the interaction between cells.

Physisorption of an electron in deep surface potentials off a dielectric surface

International Nuclear Information System (INIS)

Heinisch, R. L.; Bronold, F. X.; Fehske, H.

2011-01-01

We study phonon-mediated adsorption and desorption of an electron at dielectric surfaces with deep polarization-induced surface potentials where multiphonon transitions are responsible for electron energy relaxation. Focusing on multiphonon processes due to the nonlinearity of the coupling between the external electron and the acoustic bulk phonon triggering the transitions between surface states, we calculate electron desorption times for graphite, MgO, CaO, Al 2 O 3 , and SiO 2 and electron sticking coefficients for Al 2 O 3 , CaO, and SiO 2 . To reveal the kinetic stages of electron physisorption, we moreover study the time evolution of the image-state occupancy and the energy-resolved desorption flux. Depending on the potential depth and the surface temperature, we identify two generic scenarios: (i) adsorption via trapping in shallow image states followed by relaxation to the lowest image state and desorption from that state via a cascade through the second strongly bound image state in not too deep potentials, and (ii) adsorption via trapping in shallow image states but followed by a relaxation bottleneck retarding the transition to the lowest image state and desorption from that state via a one-step process to the continuum in deep potentials.

Passivation of surface states of α-Fe2O3(0001) surface by deposition of Ga2O3 overlayers: A density functional theory study.

Science.gov (United States)

Ulman, Kanchan; Nguyen, Manh-Thuong; Seriani, Nicola; Gebauer, Ralph

2016-03-07

There is a big debate in the community regarding the role of surface states of hematite in the photoelectrochemical water splitting. Experimental studies on non-catalytic overlayers passivating the hematite surface states claim a favorable reduction in the overpotential for the water splitting reaction. As a first step towards understanding the effect of these overlayers, we have studied the system Ga2O3 overlayers on hematite (0001) surfaces using first principles computations in the PBE+U framework. Our computations suggest that stoichiometric terminations of Ga2O3 overlayers are energetically more favored than the bare surface, at ambient oxygen chemical potentials. Energetics suggest that the overlayers prefer to grow via a layer-plus-island (Stranski-Krastanov) growth mode with a critical layer thickness of 1-2 layers. Thus, a complete wetting of the hematite surface by an overlayer of gallium oxide is thermodynamically favored. We establish that the effect of deposition of the Ga2O3 overlayers on the bare hematite surface is to passivate the surface states for the stoichiometric termination. For the oxygen terminated surface which is the most stable termination under photoelectrochemical conditions, the effect of deposition of the Ga2O3 overlayer is to passivate the hole-trapping surface state.

Ion traps fabricated in a CMOS foundry

Energy Technology Data Exchange (ETDEWEB)

Mehta, K. K.; Ram, R. J. [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Eltony, A. M.; Chuang, I. L. [Center for Ultracold Atoms, Research Laboratory of Electronics and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Bruzewicz, C. D.; Sage, J. M., E-mail: jsage@ll.mit.edu; Chiaverini, J., E-mail: john.chiaverini@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

2014-07-28

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

Deuterium trapping in tungsten

Science.gov (United States)

Poon, Michael

Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation. Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation. The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D2 molecules inside the void with a trap energy of 1.2 eV. Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D

Deuterium trapping in tungsten

International Nuclear Information System (INIS)

Poon, M.

2004-01-01

Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. . Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D 2 molecules inside the void with a trap energy of 1.2 eV. . Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D

Deuterium trapping in tungsten

Energy Technology Data Exchange (ETDEWEB)

Poon, M

2004-07-01

Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. . Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D{sub 2} molecules inside the void with a trap energy of 1.2 eV. . Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D

Greenberger-Horne-Zeilinger state generation of three atoms trapped in two remote cavities

International Nuclear Information System (INIS)

Li Yanling; Fang Maofa; Xiao Xing; Zeng Ke; Wu Chao

2010-01-01

We consider a system composed of a single-atom-trapped cavity (A) and a remote two-atom-trapped cavity (B) which are connected by an optical fibre. It is shown that a shared Greenberger-Horne-Zeilinger (GHZ) state of the three atoms can be deterministically generated by controlling the time of interaction or via the adiabatic passage based on this system. The influence of various decoherence processes such as spontaneous emission and photon loss on the fidelity is also investigated. It is found that our schemes can be realized with high fidelity even when these decoherence processes are considered.

Greenberger-Horne-Zeilinger state generation of three atoms trapped in two remote cavities

Energy Technology Data Exchange (ETDEWEB)

Li Yanling; Fang Maofa; Xiao Xing; Zeng Ke; Wu Chao, E-mail: mffang@hunnu.edu.c [Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control, Ministry of Education, and College of Physics and Information Science, Hunan Normal University, Changsha 410081 (China)

2010-04-28

We consider a system composed of a single-atom-trapped cavity (A) and a remote two-atom-trapped cavity (B) which are connected by an optical fibre. It is shown that a shared Greenberger-Horne-Zeilinger (GHZ) state of the three atoms can be deterministically generated by controlling the time of interaction or via the adiabatic passage based on this system. The influence of various decoherence processes such as spontaneous emission and photon loss on the fidelity is also investigated. It is found that our schemes can be realized with high fidelity even when these decoherence processes are considered.

Dependence of trapped-flux-induced surface resistance of a large-grain Nb superconducting radio-frequency cavity on spatial temperature gradient during cooldown through Tc

Science.gov (United States)

Huang, Shichun; Kubo, Takayuki; Geng, R. L.

2016-08-01

Recent studies by Romanenko et al. revealed that cooling down a superconducting cavity under a large spatial temperature gradient decreases the amount of trapped flux and leads to reduction of the residual surface resistance. In the present paper, the flux expulsion ratio and the trapped-flux-induced surface resistance of a large-grain cavity cooled down under a spatial temperature gradient up to 80 K /m are studied under various applied magnetic fields from 5 to 20 μ T . We show the flux expulsion ratio improves as the spatial temperature gradient increases, independent of the applied magnetic field: our results support and enforce the previous studies. We then analyze all rf measurement results obtained under different applied magnetic fields together by plotting the trapped-flux-induced surface resistance normalized by the applied magnetic field as a function of the spatial temperature gradient. All the data can be fitted by a single curve, which defines an empirical formula for the trapped-flux-induced surface resistance as a function of the spatial temperature gradient and applied magnetic field. The formula can fit not only the present results but also those obtained by Romanenko et al. previously. The sensitivity rfl of surface resistance from trapped magnetic flux of fine-grain and large-grain niobium cavities and the origin of d T /d s dependence of Rfl/Ba are also discussed.

Theory of quasiparticle surface states in semiconductor surfaces

International Nuclear Information System (INIS)

Hybertsen, M.S.; Louie, S.G.

1988-01-01

A first-principles theory of the quasiparticle surface-state energies on semiconductor surfaces is developed. The surface properties are calculated using a repeated-slab geometry. Many-body effects due to the electron-electron interaction are represented by the electron self-energy operator including the full surface Green's function and local fields and dynamical screening effects in the Coulomb interaction. Calculated surface-state energies for the prototypical Si(111):As and Ge(111):As surfaces are presented. The calculated energies and dispersions for the occupied surface states (resonances) are in excellent agreement with recent angle-resolved photoemission data. Predictions are made for the position of empty surface states on both surfaces which may be experimentally accessible. The resulting surface state gap at Gamma-bar for Si(111):As agrees with recent scanning-tunneling-spectroscopy measurements. Comparison of the present results to eigenvalues from the local-density-functional calculation reveals substantial corrections for the gaps between empty and occupied surface states. This correction is found to depend on the character of the surface states involved

Nanometer-scale optical traps using atomic state localization

International Nuclear Information System (INIS)

Yavuz, D. D.; Proite, N. A.; Green, J. T.

2009-01-01

We suggest a scheme where a laser beam forms an optical trap with a spatial size that is much smaller than the wavelength of light. The key idea is to combine a far-off-resonant dipole trap with a scheme that localizes an atomic excitation.

Trapping of negative kaons by metastable states during the atomic cascade in liquid helium

International Nuclear Information System (INIS)

Yamazaki, T.; Aoki, M.; Iwasaki, M.; Hayano, R.S.; Ishikawa, T.; Outa, H.; Takada, E.; Tamura, H.; Sakaguchi, A.

1989-06-01

We observed two distinct peaks, 205 MeV/cπ - and 235 MeV/cμ - , associated with K π2 - and K μ2 - decays at rest, respectively, from negative kaons stopped in liquid helium. These peaks were found to be delayed with respect to the stopping K - , showing that stopped K - mesons of about 2% fraction are trapped in metastable states with an overall lifetime of about 40 nsec. This observation provides a direct evidence for Condo's trapping hypothesis for the at-rest decay components of K - and π - in liquid helium. (author)

Perturbative correction to the ground-state properties of one-dimensional strongly interacting bosons in a harmonic trap

International Nuclear Information System (INIS)

Paraan, Francis N. C.; Korepin, Vladimir E.

2010-01-01

We calculate the first-order perturbation correction to the ground-state energy and chemical potential of a harmonically trapped boson gas with contact interactions about the infinite repulsion Tonks-Girardeau limit. With c denoting the interaction strength, we find that, for a large number of particles N, the 1/c correction to the ground-state energy increases as N 5/2 , in contrast to the unperturbed Tonks-Girardeau value that is proportional to N 2 . We describe a thermodynamic scaling limit for the trapping frequency that yields an extensive ground-state energy and reproduces the zero temperature thermodynamics obtained by a local-density approximation.

Evaluation method for acoustic trapping performance by tracking motion of trapped microparticle

Science.gov (United States)

Lim, Hae Gyun; Ham Kim, Hyung; Yoon, Changhan

2018-05-01

We report a method to evaluate the performances of a single-beam acoustic tweezer using a high-frequency ultrasound transducer. The motion of a microparticle trapped by a 45-MHz single-element transducer was captured and analyzed to deduce the magnitude of trapping force. In the proposed method, the motion of a trapped microparticle was analyzed from a series of microscopy images to compute trapping force; thus, no additional equipment such as microfluidics is required. The method could be used to estimate the effective trapping force in an acoustic tweezer experiment to assess cell membrane deformability by attaching a microbead to the surface of a cell and tracking the motion of the trapped bead, which is similar to a bead-based assay that uses optical tweezers. The results showed that the trapping force increased with increasing acoustic intensity and duty factor, but the force eventually reached a plateau at a higher acoustic intensity. They demonstrated that this method could be used as a simple tool to evaluate the performance and to optimize the operating conditions of acoustic tweezers.

The influence of isomer purity on trap states and performance of organic thin-film transistors.

Science.gov (United States)

Diemer, Peter J; Hayes, Jacori; Welchman, Evan; Hallani, Rawad; Pookpanratana, Sujitra J; Hacker, Christina A; Richter, Curt A; Anthony, John E; Thonhauser, Timo; Jurchescu, Oana D

2017-01-01

Organic field-effect transistor (OFET) performance is dictated by its composition and geometry, as well as the quality of the organic semiconductor (OSC) film, which strongly depends on purity and microstructure. When present, impurities and defects give rise to trap states in the bandgap of the OSC, lowering device performance. Here, 2,8-difluoro-5,11-bis(triethylsilylethynyl)-anthradithiophene is used as a model system to study the mechanism responsible for performance degradation in OFETs due to isomer coexistence. The density of trapping states is evaluated through temperature dependent current-voltage measurements, and it is discovered that OFETs containing a mixture of syn - and anti -isomers exhibit a discrete trapping state detected as a peak located at ~ 0.4 eV above the valence-band edge, which is absent in the samples fabricated on single-isomer films. Ultraviolet photoelectron spectroscopy measurements and density functional theory calculations do not point to a significant difference in electronic band structure between individual isomers. Instead, it is proposed that the dipole moment of the syn -isomer present in the host crystal of the anti -isomer locally polarizes the neighboring molecules, inducing energetic disorder. The isomers can be separated by applying gentle mechanical vibrations during film crystallization, as confirmed by the suppression of the peak and improvement in device performance.

Modeling of the effect of intentionally introduced traps on hole transport in single-crystal rubrene

KAUST Repository

Dacuñ a, Javier; Desai, Amit; Xie, Wei; Salleo, Alberto

2014-01-01

Defects have been intentionally introduced in a rubrene single crystal by means of two different mechanisms: ultraviolet ozone (UVO) exposure and x-ray irradiation. A complete drift-diffusion model based on the mobility edge (ME) concept, which takes into account asymmetries and nonuniformities in the semiconductor, is used to estimate the energetic and spatial distribution of trap states. The trap distribution for pristine devices can be decomposed into two well defined regions: a shallow region ascribed to structural disorder and a deeper region ascribed to defects. UVO and x ray increase the hole trap concentration in the semiconductor with different energetic and spatial signatures. The former creates traps near the top surface in the 0.3-0.4 eV region, while the latter induces a wider distribution of traps extending from the band edge with a spatial distribution that peaks near the top and bottom interfaces. In addition to inducing hole trap states in the transport gap, both processes are shown to reduce the mobility with respect to a pristine crystal. © 2014 American Physical Society.

Modeling of the effect of intentionally introduced traps on hole transport in single-crystal rubrene

KAUST Repository

Dacuña, Javier

2014-06-05

Defects have been intentionally introduced in a rubrene single crystal by means of two different mechanisms: ultraviolet ozone (UVO) exposure and x-ray irradiation. A complete drift-diffusion model based on the mobility edge (ME) concept, which takes into account asymmetries and nonuniformities in the semiconductor, is used to estimate the energetic and spatial distribution of trap states. The trap distribution for pristine devices can be decomposed into two well defined regions: a shallow region ascribed to structural disorder and a deeper region ascribed to defects. UVO and x ray increase the hole trap concentration in the semiconductor with different energetic and spatial signatures. The former creates traps near the top surface in the 0.3-0.4 eV region, while the latter induces a wider distribution of traps extending from the band edge with a spatial distribution that peaks near the top and bottom interfaces. In addition to inducing hole trap states in the transport gap, both processes are shown to reduce the mobility with respect to a pristine crystal. © 2014 American Physical Society.

Density of Trap States and Auger-mediated Electron Trapping in CdTe Quantum-Dot Solids

NARCIS (Netherlands)

Boehme, Simon C.; Mikel Azpiroz, Jon; Aulin, Yaroslav V.; Grozema, Ferdinand C.; Vanmaekelbergh, Daniel; Siebbeles, Laurens D. A.; Infante, Ivan; Houtepen, Arjan J.

Charge trapping is an ubiquitous process in colloidal quantum-dot solids and a major limitation to the efficiency of quantum dot based devices such as solar cells, LEDs, and thermoelectrics. Although empirical approaches led to a reduction of trapping and thereby efficiency enhancements, the exact

Density of trap states and Auger-mediated electron trapping in CdTe quantum-dot solids

NARCIS (Netherlands)

Boehme, Simon C.; Azpiroz, Jon Mikel; Aulin, Yaroslav V.; Grozema, Ferdinand C.; Vanmaekelbergh, Daniël; Siebbeles, Laurens D A; Infante, Ivan; Houtepen, Arjan J.

2015-01-01

Charge trapping is an ubiquitous process in colloidal quantum-dot solids and a major limitation to the efficiency of quantum dot based devices such as solar cells, LEDs, and thermoelectrics. Although empirical approaches led to a reduction of trapping and thereby efficiency enhancements, the exact

Ripple Trap

Science.gov (United States)

2006-01-01

3 April 2006 This Mars Global Surveyor (MGS) Mars Orbiter Camera (MOC) image shows the margin of a lava flow on a cratered plain in the Athabasca Vallis region of Mars. Remarkably, the cratered plain in this scene is essentially free of bright, windblown ripples. Conversely, the lava flow apparently acted as a trap for windblown materials, illustrated by the presence of the light-toned, wave-like texture over much of the flow. That the lava flow surface trapped windblown sand and granules better than the cratered plain indicates that the flow surface has a rougher texture at a scale too small to resolve in this image. Location near: 10.7oN, 204.5oW Image width: 3 km (1.9 mi) Illumination from: lower left Season: Northern Winter

Trapped Ion Qubits

Energy Technology Data Exchange (ETDEWEB)

Maunz, Peter Lukas Wilhelm

2017-04-01

Qubits can be encoded in clock states of trapped ions. These states are well isolated from the environment resulting in long coherence times [1] while enabling efficient high-fidelity qubit interactions mediated by the Coulomb coupled motion of the ions in the trap. Quantum states can be prepared with high fidelity and measured efficiently using fluorescence detection. State preparation and detection with 99.93% fidelity have been realized in multiple systems [1,2]. Single qubit gates have been demonstrated below rigorous fault-tolerance thresholds [1,3]. Two qubit gates have been realized with more than 99.9% fidelity [4,5]. Quantum algorithms have been demonstrated on systems of 5 to 15 qubits [6–8].

Trapped antihydrogen

CERN Document Server

Butler, E; Ashkezari, M D; Baquero-Ruiz, M; Bertsche, W; Bowe, P D; Cesar, C L; Chapman, S; Charlton, M; Deller, A; Eriksson, S; Fajans, J; Friesen, T; Fujiwara, M C; Gill, D R; Gutierrez, A; Hangst, J S; Hardy, W N; Hayden, M E; Humphries, A J; Hydomako, R; Jenkins, M J; Jonsell, S; Jørgensen, L V; Kemp, S L; Kurchaninov, L; Madsen, N; Menary, S; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Pusa, P; Rasmussen, C Ø; Robicheaux, F; Sarid, E; Seif el Nasr, S; Silveira, D M; So, C; Storey, J W; Thompson, R I; van der Werf, D P; Wurtele, J S; Yamazaki,Y

2012-01-01

Precision spectroscopic comparison of hydrogen and antihydrogen holds the promise of a sensitive test of the Charge-Parity-Time theorem and matter-antimatter equivalence. The clearest path towards realising this goal is to hold a sample of antihydrogen in an atomic trap for interrogation by electromagnetic radiation. Achieving this poses a huge experimental challenge, as state-of-the-art magnetic-minimum atom traps have well depths of only ∼1 T (∼0.5 K for ground state antihydrogen atoms). The atoms annihilate on contact with matter and must be ‘born’ inside the magnetic trap with low kinetic energies. At the ALPHA experiment, antihydrogen atoms are produced from antiprotons and positrons stored in the form of non-neutral plasmas, where the typical electrostatic potential energy per particle is on the order of electronvolts, more than 104 times the maximum trappable kinetic energy. In November 2010, ALPHA published the observation of 38 antiproton annihilations due to antihydrogen atoms that had been ...

Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics.

Science.gov (United States)

Nugraha, Mohamad I; Häusermann, Roger; Watanabe, Shun; Matsui, Hiroyuki; Sytnyk, Mykhailo; Heiss, Wolfgang; Takeya, Jun; Loi, Maria A

2017-02-08

We perform a quantitative analysis of the trap density of states (trap DOS) in PbS quantum dot field-effect transistors (QD-FETs), which utilize several polymer gate insulators with a wide range of dielectric constants. With increasing gate dielectric constant, we observe increasing trap DOS close to the lowest unoccupied molecular orbital (LUMO) of the QDs. In addition, this increase is also consistently followed by broadening of the trap DOS. We rationalize that the increase and broadening of the spectral trap distribution originate from dipolar disorder as well as polaronic interactions, which are appearing at strong dielectric polarization. Interestingly, the increased polaron-induced traps do not show any negative effect on the charge carrier mobility in our QD devices at the highest applied gate voltage, giving the possibility to fabricate efficient low-voltage QD devices without suppressing carrier transport.

Single-molecule dynamics in nanofabricated traps

Science.gov (United States)

Cohen, Adam

2009-03-01

The Anti-Brownian Electrokinetic trap (ABEL trap) provides a means to immobilize a single fluorescent molecule in solution, without surface attachment chemistry. The ABEL trap works by tracking the Brownian motion of a single molecule, and applying feedback electric fields to induce an electrokinetic motion that approximately cancels the Brownian motion. We present a new design for the ABEL trap that allows smaller molecules to be trapped and more information to be extracted from the dynamics of a single molecule than was previously possible. In particular, we present strategies for extracting dynamically fluctuating mobilities and diffusion coefficients, as a means to probe dynamic changes in molecular charge and shape. If one trapped molecule is good, many trapped molecules are better. An array of single molecules in solution, each immobilized without surface attachment chemistry, provides an ideal test-bed for single-molecule analyses of intramolecular dynamics and intermolecular interactions. We present a technology for creating such an array, using a fused silica plate with nanofabricated dimples and a removable cover for sealing single molecules within the dimples. With this device one can watch the shape fluctuations of single molecules of DNA or study cooperative interactions in weakly associating protein complexes.

Selective enhancement of surface-state emission and simultaneous quenching of interband transition in white-luminophor CdS nanocrystals using localized plasmon coupling

Energy Technology Data Exchange (ETDEWEB)

Ozel, Tuncay; Soganci, Ibrahim Murat; Nizamoglu, Sedat; Huyal, Ilkem Ozge; Mutlugun, Evren; Demir, Hilmi Volkan [Department of Physics, Department of Electrical and Electronics Engineering, Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800 (Turkey); Sapra, Sameer; Gaponik, Nikolai; Eychmueller, Alexander [Physical Chemistry/Electrochemistry Group, Technische Universitaet Dresden, Bergstr. 66b, Dresden 01062 (Germany)], E-mail: volkan@bilkent.edu.tr

2008-08-15

We propose and demonstrate the controlled modification and selective enhancement of surface-state emission in white-luminophor CdS nanocrystals (NCs) by plasmon-coupling them with proximal metal nanostructures. By carefully designing nano-Ag films to match their localized plasmon resonance spectrally with the surface-state emission peak of CdS NCs, we experimentally show that the surface-state emission is substantially enhanced in the visible wavelength, while the interband (band-edge) transition at the shorter wavelength far away from the plasmon resonance is simultaneously significantly suppressed. With such plasmon tuning and consequent strong plasmon coupling specifically for the surface-state transitions, the surface-state emission is made stronger than the band-edge emission. This corresponds to an enhancement factor of 12.7-fold in the ratio of the surface-state peak emission to the band-edge peak emission of the plasmon-coupled film sample compared with that in solution. Such a plasmonic engineering of surface-state emission in trap-rich CdS white nanoluminophors holds great promise for future solid-state lighting.

Selective enhancement of surface-state emission and simultaneous quenching of interband transition in white-luminophor CdS nanocrystals using localized plasmon coupling

International Nuclear Information System (INIS)

Ozel, Tuncay; Soganci, Ibrahim Murat; Nizamoglu, Sedat; Huyal, Ilkem Ozge; Mutlugun, Evren; Demir, Hilmi Volkan; Sapra, Sameer; Gaponik, Nikolai; Eychmueller, Alexander

2008-01-01

We propose and demonstrate the controlled modification and selective enhancement of surface-state emission in white-luminophor CdS nanocrystals (NCs) by plasmon-coupling them with proximal metal nanostructures. By carefully designing nano-Ag films to match their localized plasmon resonance spectrally with the surface-state emission peak of CdS NCs, we experimentally show that the surface-state emission is substantially enhanced in the visible wavelength, while the interband (band-edge) transition at the shorter wavelength far away from the plasmon resonance is simultaneously significantly suppressed. With such plasmon tuning and consequent strong plasmon coupling specifically for the surface-state transitions, the surface-state emission is made stronger than the band-edge emission. This corresponds to an enhancement factor of 12.7-fold in the ratio of the surface-state peak emission to the band-edge peak emission of the plasmon-coupled film sample compared with that in solution. Such a plasmonic engineering of surface-state emission in trap-rich CdS white nanoluminophors holds great promise for future solid-state lighting

Quantum information processing with trapped ions

International Nuclear Information System (INIS)

Haeffner, H.; Haensel, W.; Rapol, U.; Koerber, T.; Benhelm, J.; Riebe, M.; Chek-al-Kar, D.; Schmidt-Kaler, F.; Becher, C.; Roos, C.; Blatt, R.

2005-01-01

Single Ca + ions and crystals of Ca + ions are confined in a linear Paul trap and are investigated for quantum information processing. Here we report on recent experimental advancements towards a quantum computer with such a system. Laser-cooled trapped ions are ideally suited systems for the investigation and implementation of quantum information processing as one can gain almost complete control over their internal and external degrees of freedom. The combination of a Paul type ion trap with laser cooling leads to unique properties of trapped cold ions, such as control of the motional state down to the zero-point of the trapping potential, a high degree of isolation from the environment and thus a very long time available for manipulations and interactions at the quantum level. The very same properties make single trapped atoms and ions well suited for storing quantum information in long lived internal states, e.g. by encoding a quantum bit (qubit) of information within the coherent superposition of the S 1/2 ground state and the metastable D 5/2 excited state of Ca + . Recently we have achieved the implementation of simple algorithms with up to 3 qubits on an ion-trap quantum computer. We will report on methods to implement single qubit rotations, the realization of a two-qubit universal quantum gate (Cirac-Zoller CNOT-gate), the deterministic generation of multi-particle entangled states (GHZ- and W-states), their full tomographic reconstruction, the realization of deterministic quantum teleportation, its quantum process tomography and the encoding of quantum information in decoherence-free subspaces with coherence times exceeding 20 seconds. (author)

Theoretical characterization on the size-dependent electron and hole trapping activity of chloride-passivated CdSe nanoclusters

Science.gov (United States)

Cui, Yingqi; Cui, Xianhui; Zhang, Li; Xie, Yujuan; Yang, Mingli

2018-04-01

Ligand passivation is often used to suppress the surface trap states of semiconductor quantum dots (QDs) for their continuous photoluminescence output. The suppression process is related to the electrophilic/nucleophilic activity of surface atoms that varies with the structure and size of QD and the electron donating/accepting nature of ligand. Based on first-principles-based descriptors and cluster models, the electrophilic/nucleophilic activities of bare and chloride-coated CdSe clusters were studied to reveal the suppression mechanism of Cl-passivated QDs and compared to experimental observations. The surface atoms of bare clusters have higher activity than inner atoms and their activity decreases with cluster size. In the ligand-coated clusters, the Cd atom remains as the electrophilic site, while the nucleophilic site of Se atoms is replaced by Cl atoms. The activities of Cd and Cl atoms in the coated clusters are, however, remarkably weaker than those in bare clusters. Cluster size, dangling atoms, ligand coverage, electronegativity of ligand atoms, and solvent (water) were found to have considerable influence on the activity of surface atoms. The suppression of surface trap states in Cl-passivated QDs was attributed to the reduction of electrophilic/nucleophilic activity of Cd/Se/Cl atoms. Both saturation to under-coordinated surface atoms and proper selection for the electron donating/accepting strength of ligands are crucial for eliminating the charge carrier traps. Our calculations predicted a similar suppressing effect of chloride ligands with experiments and provided a simple but effective approach to assess the charge carrier trapping behaviors of semiconductor QDs.

Trapped atoms along nanophotonic resonators

Science.gov (United States)

Fields, Brian; Kim, May; Chang, Tzu-Han; Hung, Chen-Lung

2017-04-01

Many-body systems subject to long-range interactions have remained a very challenging topic experimentally. Ultracold atoms trapped in extreme proximity to the surface of nanophotonic structures provides a dynamic system combining the strong atom-atom interactions mediated by guided mode photons with the exquisite control implemented with trapped atom systems. The hybrid system promises pair-wise tunability of long-range interactions between atomic pseudo spins, allowing studies of quantum magnetism extending far beyond nearest neighbor interactions. In this talk, we will discuss our current status developing high quality nanophotonic ring resonators, engineered on CMOS compatible optical chips with integrated nanostructures that, in combination with a side illuminating beam, can realize stable atom traps approximately 100nm above the surface. We will report on our progress towards loading arrays of cold atoms near the surface of these structures and studying atom-atom interaction mediated by photons with high cooperativity.

Quenching of surface traps in Mn doped ZnO thin films for enhanced optical transparency

International Nuclear Information System (INIS)

Ilyas, Usman; Rawat, R.S.; Roshan, G.; Tan, T.L.; Lee, P.; Springham, S.V.; Zhang, Sam; Fengji Li; Chen, R.; Sun, H.D.

2011-01-01

The structural and photoluminescence analyses were performed on un-doped and Mn doped ZnO thin films grown on Si (1 0 0) substrate by pulsed laser deposition (PLD) and annealed at different post-deposition temperatures (500-800 deg. C). X-ray diffraction (XRD), employed to study the structural properties, showed an improved crystallinity at elevated temperatures with a consistent decrease in the lattice parameter 'c'. The peak broadening in XRD spectra and the presence of Mn 2p3/2 peak at ∼640 eV in X-ray Photoelectron Spectroscopic (XPS) spectra of the doped thin films confirmed the successful incorporation of Mn in ZnO host matrix. Extended near band edge emission (NBE) spectra indicated the reduction in the concentration of the intrinsic surface traps in comparison to the doped ones resulting in improved optical transparency. Reduced deep level emission (DLE) spectra in doped thin films with declined PL ratio validated the quenching of the intrinsic surface traps thereby improving the optical transparency and the band gap, essential for optoelectronic and spintronic applications. Furthermore, the formation and uniform distribution of nano-sized grains with improved surface features of Mn-doped ZnO thin films were observed in Field Emission Scanning Electron Microscopy (FESEM) images.

Topological Edge-State Manifestation of Interacting 2D Condensed Boson-Lattice Systems in a Harmonic Trap

Science.gov (United States)

Galilo, Bogdan; Lee, Derek K. K.; Barnett, Ryan

2017-11-01

In this Letter, it is shown that interactions can facilitate the emergence of topological edge states of quantum-degenerate bosonic systems in the presence of a harmonic potential. This effect is demonstrated with the concrete model of a hexagonal lattice populated by spin-one bosons under a synthetic gauge field. In fermionic or noninteracting systems, the presence of a harmonic trap can obscure the observation of edge states. For our system with weakly interacting bosons in the Thomas-Fermi regime, we can clearly see a topological band structure with a band gap traversed by edge states. We also find that the number of edge states crossing the gap is increased in the presence of a harmonic trap, and the edge modes experience an energy shift while traversing the first Brillouin zone which is related to the topological properties of the system. We find an analytical expression for the edge-state energies and our comparison with numerical computation shows excellent agreement.

Topological Edge-State Manifestation of Interacting 2D Condensed Boson-Lattice Systems in a Harmonic Trap.

Science.gov (United States)

Galilo, Bogdan; Lee, Derek K K; Barnett, Ryan

2017-11-17

In this Letter, it is shown that interactions can facilitate the emergence of topological edge states of quantum-degenerate bosonic systems in the presence of a harmonic potential. This effect is demonstrated with the concrete model of a hexagonal lattice populated by spin-one bosons under a synthetic gauge field. In fermionic or noninteracting systems, the presence of a harmonic trap can obscure the observation of edge states. For our system with weakly interacting bosons in the Thomas-Fermi regime, we can clearly see a topological band structure with a band gap traversed by edge states. We also find that the number of edge states crossing the gap is increased in the presence of a harmonic trap, and the edge modes experience an energy shift while traversing the first Brillouin zone which is related to the topological properties of the system. We find an analytical expression for the edge-state energies and our comparison with numerical computation shows excellent agreement.

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Wu, Tian-Li, E-mail: Tian-Li.Wu@imec.be; Groeseneken, Guido [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, Leuven (Belgium); Marcon, Denis; De Jaeger, Brice; Lin, H. C.; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan [imec, Kapeldreef 75, 3001 Leuven (Belgium); Bakeroot, Benoit [imec, Kapeldreef 75, 3001 Leuven (Belgium); Centre for Microsystems Technology, Ghent University, 9052 Gent (Belgium); Roelofs, Robin [ASM, Kapeldreef 75, 3001 Leuven (Belgium)

2015-08-31

In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.

Distance scaling of electric-field noise in a surface-electrode ion trap

Science.gov (United States)

Sedlacek, J. A.; Greene, A.; Stuart, J.; McConnell, R.; Bruzewicz, C. D.; Sage, J. M.; Chiaverini, J.

2018-02-01

We investigate anomalous ion-motional heating, a limitation to multiqubit quantum-logic gate fidelity in trapped-ion systems, as a function of ion-electrode separation. Using a multizone surface-electrode trap in which ions can be held at five discrete distances from the metal electrodes, we measure power-law dependencies of the electric-field noise experienced by the ion on the ion-electrode distance d . We find a scaling of approximately d-4 regardless of whether the electrodes are at room temperature or cryogenic temperature, despite the fact that the heating rates are approximately two orders of magnitude smaller in the latter case. Through auxiliary measurements using the application of noise to the electrodes, we rule out technical limitations to the measured heating rates and scalings. We also measure the frequency scaling of the inherent electric-field noise close to 1 /f at both temperatures. These measurements eliminate from consideration anomalous-heating models which do not have a d-4 distance dependence, including several microscopic models of current interest.

Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Kim, Jae-Sung; Xing Piao, Ming; Jang, Ho-Kyun; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Joo, Min-Kyu [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); IMEP-LAHC, Grenoble INP, Minatec, CS 50257, 38016 Grenoble (France); Ahn, Seung-Eon [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin, Gyeonggi-Do 446-712 (Korea, Republic of); Choi, Yong-Hee [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Semiconductor R and D Center, Samsung Electronics, Hwasung, Gyeonggi-do 445-701 (Korea, Republic of)

2014-03-21

Various plasma treatment effects such as oxygen (O{sub 2}), nitrogen (N{sub 2}), and argon (Ar) on amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To study oxygen stoichiometry in a-IGZO TFTs with respect to various plasma environments, X-ray photoelectron spectroscopy was employed. The results showed that oxygen vacancies were reduced by O{sub 2} and N{sub 2} plasmas while they were increased after Ar plasma treatment. Additionally, the effects of plasma treatment on trap distribution in bulk and surface channels were explored by means of low-frequency noise analysis. Details of the mechanisms used for generating and restoring traps on the surface and bulk channel are presented.

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

International Nuclear Information System (INIS)

Li, Baikui; Tang, Xi; Chen, Kevin J.

2015-01-01

In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R on and/or threshold voltage V th of the HEMT. The results show that the recovery processes of both dynamic R on and threshold voltage V th of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs

Dependence of secondary electron emission on surface charging in sapphire and polycrystalline alumina: Evaluation of the effective cross sections for recombination and trapping

International Nuclear Information System (INIS)

Said, K.; Damamme, G.; Si Ahmed, A.; Moya, G.; Kallel, A.

2014-01-01

Highlights: • A novel approach for the analysis of the secondary electron emission in connection with the surface density of trapped charges. • Experimental estimation of the effective cross section for electron–hole recombination and electron trapping in defects. • A simplified charge transport and trapping model which corroborates qualitatively the interpretation of the results. - Abstract: The evolution of the secondary electron emission from sapphire and polycrystalline alumina during electron irradiation, achieved in a scanning electron microscope at room temperature, is derived from the measurement of the induced and the secondary electron currents. The semi-logarithmic plot of the secondary electron emission yield versus the surface density of trapped charges displays a plateau followed by a linear variation. For positive charging, the slope of the linear part, whose value is of about 10 −9 cm 2 , is independent of the primary electron energy, the microstructure and the impurities. It is interpreted as an effective microscopic cross section for electron–hole recombination. For negative charging of sapphire, the slope is associated with an effective electron trapping cross section close to 10 −11 cm 2 , which can be assigned to the dominant impurity trap. These effective values reflect the multiple interactions leading to the accumulation of charges. The yield corresponding to the plateau is controlled by the initial density of impurity traps. A charge transport and trapping >model, based on simplifying assumptions, confirms qualitatively these inferences

Stationary states and rotational properties of spin-orbit-coupled Bose-Einstein condensates held under a toroidal trap

Science.gov (United States)

He, Zhang-Ming; Zhang, Xiao-Fei; Kato, Masaya; Han, Wei; Saito, Hiroki

2018-06-01

We consider a pseudospin-1/2 Bose-Einstein condensate with Rashba spin-orbit coupling in a two-dimensional toroidal trap. By solving the damped Gross-Pitaevskii equations for this system, we show that the system exhibits a rich variety of stationary states, such as vehicle wheel and flower-petal stripe patterns. These stationary states are stable against perturbation with thermal energy and can survive for a long time. In the presence of rotation, our results show that the rotating systems have exotic vortex configurations. These phenomenon originates from the interplay among spin-orbit coupling, trap geometry, and rotation.

Dependence of trapped-flux-induced surface resistance of a large-grain Nb superconducting radio-frequency cavity on spatial temperature gradient during cooldown through T_{c}

Directory of Open Access Journals (Sweden)

Shichun Huang

2016-08-01

Full Text Available Recent studies by Romanenko et al. revealed that cooling down a superconducting cavity under a large spatial temperature gradient decreases the amount of trapped flux and leads to reduction of the residual surface resistance. In the present paper, the flux expulsion ratio and the trapped-flux-induced surface resistance of a large-grain cavity cooled down under a spatial temperature gradient up to 80  K/m are studied under various applied magnetic fields from 5 to 20  μT. We show the flux expulsion ratio improves as the spatial temperature gradient increases, independent of the applied magnetic field: our results support and enforce the previous studies. We then analyze all rf measurement results obtained under different applied magnetic fields together by plotting the trapped-flux-induced surface resistance normalized by the applied magnetic field as a function of the spatial temperature gradient. All the data can be fitted by a single curve, which defines an empirical formula for the trapped-flux-induced surface resistance as a function of the spatial temperature gradient and applied magnetic field. The formula can fit not only the present results but also those obtained by Romanenko et al. previously. The sensitivity r_{fl} of surface resistance from trapped magnetic flux of fine-grain and large-grain niobium cavities and the origin of dT/ds dependence of R_{fl}/B_{a} are also discussed.

Droplet trapping and fast acoustic release in a multi-height device with steady-state flow.

Science.gov (United States)

Rambach, Richard W; Linder, Kevin; Heymann, Michael; Franke, Thomas

2017-10-11

We demonstrate a novel multilayer polydimethylsiloxane (PDMS) device for selective storage and release of single emulsion droplets. Drops are captured in a microchannel cavity and can be released on-demand through a triggered surface acoustic wave pulse. The surface acoustic wave (SAW) is excited by a tapered interdigital transducer (TIDT) deposited on a piezoelectric lithium niobate (LiNbO 3 ) substrate and inverts the pressure difference across the cavity trap to push a drop out of the trap and back into the main flow channel. Droplet capture and release does not require a flow rate change, flow interruption, flow inversion or valve action and can be achieved in as fast as 20 ms. This allows both on-demand droplet capture for analysis and monitoring over arbitrary time scales, and continuous device operation with a high droplet rate of 620 drops per s. We hence decouple long-term droplet interrogation from other operations on the chip. This will ease integration with other microfluidic droplet operations and functional components.

Scaling ion traps for quantum computing

CSIR Research Space (South Africa)

Uys, H

2010-09-01

Full Text Available The design, fabrication and preliminary testing of a chipscale, multi-zone, surface electrode ion trap is reported. The modular design and fabrication techniques used are anticipated to advance scalability of ion trap quantum computing architectures...

Cavity sideband cooling of trapped molecules

NARCIS (Netherlands)

Kowalewski, Markus; Morigi, Giovanna; Pinkse, Pepijn Willemszoon Harry; de Vivie-Riedle, Regina

2011-01-01

The efficiency of cavity sideband cooling of trapped molecules is theoretically investigated for the case in which the infrared transition between two rovibrational states is used as a cycling transition. The molecules are assumed to be trapped either by a radiofrequency or optical trapping

Charged particle traps II applications

CERN Document Server

Werth, Günther; Major, Fouad G

2009-01-01

This, the second volume of Charged Particle Traps, is devoted to applications, complementing the first volume’s comprehensive treatment of the theory and practice of charged particle traps, their many variants and refinements. In recent years, applications of far reaching importance have emerged ranging from the ultra-precise mass determinations of elementary particles and their antiparticles and short-lived isotopes, to high-resolution Zeeman spectroscopy on multiply-charged ions, to microwave and optical spectroscopy, some involving "forbidden" transitions from metastable states of such high resolution that optical frequency standards are realized by locking lasers to them. Further the potential application of trapped ions to quantum computing is explored, based on the extraordinary quantum state coherence made possible by the particle isolation. Consideration is given to the Paul and Penning traps as potential quantum information processors.

Essentially Trap-Free CsPbBr3 Colloidal Nanocrystals by Postsynthetic Thiocyanate Surface Treatment.

Science.gov (United States)

Koscher, Brent A; Swabeck, Joseph K; Bronstein, Noah D; Alivisatos, A Paul

2017-05-17

We demonstrate postsynthetic modification of CsPbBr 3 nanocrystals by a thiocyanate salt treatment. This treatment improves the quantum yield of both freshly synthesized (PLQY ≈ 90%) and aged nanocrystals (PLQY ≈ 70%) to within measurement error (2-3%) of unity, while simultaneously maintaining the shape, size, and colloidal stability. Additionally, the luminescence decay kinetics transform from multiexponential decays typical of nanocrystalline semiconductors with a distribution of trap sites, to a monoexponential decay, typical of single energy level emitters. Thiocyanate only needs to access a limited number of CsPbBr 3 nanocrystal surface sites, likely representing under-coordinated lead atoms on the surface, in order to have this effect.

Improving the indoor air quality by using a surface emissions trap

Science.gov (United States)

Markowicz, Pawel; Larsson, Lennart

2015-04-01

The surface emissions trap, an adsorption cloth developed for reducing emissions of volatile organic compounds and particulate matter from surfaces while allowing evaporation of moisture, was used to improve the indoor air quality of a school building with elevated air concentrations of 2-ethyl-1-hexanol. An improvement of the perceived air quality was noticed a few days after the device had been attached on the PVC flooring. In parallel, decreased air concentrations of 2-ethyl-1-hexanol were found as well as a linear increase of the amounts of the same compound adsorbed on the installed cloth as observed up to 13 months after installation. Laboratory studies revealed that the performance of the device is not affected by differences in RH (35-85%), temperature (30-40 °C) or by accelerated aging simulating up to 10 years product lifetime, and, from a blinded exposure test, that the device efficiently blocks chemical odors. This study suggests that the device may represent a fast and efficient means of restoring the indoor air quality in a building e.g. after water damage leading to irritating and potentially harmful emissions from building material surfaces indoors.

Electronic excited states as a probe of surface adsorbate structure and dynamics in liquid xenon

Energy Technology Data Exchange (ETDEWEB)

Peterson, Eric Scott [Univ. of California, Berkeley, CA (United States)

1992-08-01

A combination of second harmonic generation (SHG) and a simple dipole-dipole interaction model is presented as a new technique for determining adsorbate geometries on surfaces. The polarization dependence of SHG is used to define possible geometries of the adsorbate about the surface normal. Absorption band shifts using geometry constraints imposed by SHG data are derived for a dimer constructed from two arbitrarily placed monomers on the surface using the dipole-dipole interaction potential. These formulae can be used to determine the orientation of the two monomers relative to each other. A simplified version of this formalism is used to interpret absorption band shifts for rhodamine B adsorbed on fused silica. A brief history of the exciton is given with particular detail to Xe. Data are presented for transient absorption at RT in liquid xenon on the picosecond time scale. These are observations of both tunneling through the barrier that separates the free and trapped exciton states and the subsequent trapping of the exciton. In high densities both of these processes are found to occur within 2 to 6 picoseconds in agreement with theories of Kmiecik and Schreiber and of Martin. A threshold density is observed that separates relaxation via single binary collisions and relaxation that proceeds via Martin`s resonant energy transfer hopping mechanism.

Generation of Arbitrary Pure States for Three-dimensional Motion of a Trapped Ion

International Nuclear Information System (INIS)

Li Dachuang; Dong Ping; Cao Zhuoliang; Wang Xianping; Yang Ming

2010-01-01

In this paper, we propose a scheme for generating an arbitrary three-dimensional pure state of vibrational motion of a trapped ion. Our scheme is based on a sequence of laser pulses, which are tuned to the appropriate vibrational sidebands with respect to the appropriate electronic transition. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Ab-initio calculations of the hydrogen-uranium system: Surface phenomena, absorption, transport and trapping

International Nuclear Information System (INIS)

Taylor, Christopher D.; Scott Lillard, R.

2009-01-01

Density functional theory was applied to the initial steps of uranium hydriding: surface phenomena, absorption, bulk transport and trapping. H adsorbs exothermically to the (0 0 1) surface, yet H absorption into the bulk is endothermic, with off-center octahedral absorption having the lowest absorption energy of 0.39 eV, relative to molecular H 2 . H absorption in interstitial sites causes a local softening of the bulk modulus. Diffusion of H in unstrained α-U has a barrier of 0.6 eV. The energy of H absorption adjacent to the chemical impurities C, S, Si was lowered by an amount proportional to the size of the impurity atom, and the resulting lattice strain Si > S > C. Thus, impurities may promote hydriding by providing surfaces or prestrained zones for H uptake.

Holes in magneto electrostatic traps

International Nuclear Information System (INIS)

Jones, R.

1996-01-01

We observe that in magneto electrostatic confinement (MEC) devices the magnetic surfaces are not always equipotentials. The lack of symmetry in the equipotential surfaces can result in holes in MEC plasma traps. (author)

Achieving Translationally Invariant Trapped Ion Rings

Science.gov (United States)

Urban, Erik; Li, Hao-Kun; Noel, Crystal; Hemmerling, Boerge; Zhang, Xiang; Haeffner, Hartmut

2017-04-01

We present the design and implementation of a novel surface ion trap design in a ring configuration. By eliminating the need for wire bonds through the use of electrical vias and using a rotationally invariant electrode configuration, we have realized a trap that is able to trap up to 20 ions in a ring geometry 45um in diameter, 400um above the trap surface. This large trapping height to ring diameter ratio allows for global addressing of the ring with both lasers and electric fields in the chamber, thereby increasing our ability to control the ring as a whole. Applying compensating electric fields, we measure very low tangential trap frequencies (less than 20kHz) corresponding to rotational barriers down to 4mK. This measurement is currently limited by the temperature of the ions but extrapolation indicates the barrier can be reduced much further with more advanced cooling techniques. Finally, we show that we are able to reduce this energy barrier sufficiently such that the ions are able to overcome it either through thermal motion or rotational motion and delocalize over the full extent of the ring. This work was funded by the Keck Foundation and the NSF.

Studies on the surface modification of diatomite with polyethyleneimine and trapping effect of the modified diatomite for phenol

International Nuclear Information System (INIS)

Gao Baojiao; Jiang Pengfei; An Fuqiang; Zhao Shuying; Ge Zhen

2005-01-01

The adsorption isotherm of polyethyleneimine (PEI) on diatomite was studied using UV spectrophotometry, the surface of diatomite was modified with polyethyleneimine by using impregnation method, and the trapping behavior of the modified diatomite for phenol was investigated by using 4-aminoantipyrine (4-AAP) spectrophotometric method. The experiment results show that negatively charged diatomite particles have very strong absorption effect for cationic macromolecule PEI, the adsorption isotherm fits in Freundlich equation. The character that there is a maximum value after intitial sharp increase of adsorption capacity on the adsorption curve indicates that there is strong affinity between diatomite particles and polyethyleneimine macromolecules, and it attributes to the strong electrostatic interaction. After modification with PEI, the electric property of diatomite particle surface changes essentially, and the isoelectric point of diatomite particles moves from pH 2.0 to 10.5. In acidic solution, phenol exists as molecular state, and the modified diatomite particles adsorb phenol through hydrogen bond interaction. However, the hydrogen bond interaction between nitrogen atoms on PEI chains and phenol is weaker because of high degree of protonation of polyethyleneimine macromolecules, so the adsorption quantity is lower. In basic solution, phenol exists as negative benzene-oxygen ion, and the modified diatomite particles adsorb phenol through electrostatic interaction. However, the electrostatic interaction between PEI and negative benzene-oxygen ion is very weak because of low degree of protonation of polyethyleneimine macromolecules, so the adsorption quantity is much lower. The modified diatomite particles produce very strong trapping effect for phenol in neutral aqueous solution via the cooperating of strong electrostatic interaction and hydrogen bond interaction, and the saturated adsorption capacity can attain to 92 mg g -1

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

2015-03-02

In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R{sub on} and/or threshold voltage V{sub th} of the HEMT. The results show that the recovery processes of both dynamic R{sub on} and threshold voltage V{sub th} of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs.

Trapping, self-trapping and the polaron family

International Nuclear Information System (INIS)

Stoneham, A M; Gavartin, J; Shluger, A L; Kimmel, A V; Ramo, D Munoz; Roennow, H M; Aeppli, G; Renner, C

2007-01-01

The earliest ideas of the polaron recognized that the coupling of an electron to ionic vibrations would affect its apparent mass and could effectively immobilize the carrier (self-trapping). We discuss how these basic ideas have been generalized to recognize new materials and new phenomena. First, there is an interplay between self-trapping and trapping associated with defects or with fluctuations in an amorphous solid. In high dielectric constant oxides, like HfO 2 , this leads to oxygen vacancies having as many as five charge states. In colossal magnetoresistance manganites, this interplay makes possible the scanning tunnelling microscopy (STM) observation of polarons. Second, excitons can self-trap and, by doing so, localize energy in ways that can modify the material properties. Third, new materials introduce new features, with polaron-related ideas emerging for uranium dioxide, gate dielectric oxides, Jahn-Teller systems, semiconducting polymers and biological systems. The phonon modes that initiate self-trapping can be quite different from the longitudinal optic modes usually assumed to dominate. Fourth, there are new phenomena, like possible magnetism in simple oxides, or with the evolution of short-lived polarons, like muons or excitons. The central idea remains that of a particle whose properties are modified by polarizing or deforming its host solid, sometimes profoundly. However, some of the simpler standard assumptions can give a limited, indeed misleading, description of real systems, with qualitative inconsistencies. We discuss representative cases for which theory and experiment can be compared in detail

Effect of gamma-ray irradiation on the surface states of MOS tunnel junctions

Science.gov (United States)

Ma, T. P.; Barker, R. C.

1974-01-01

Gamma-ray irradiation with doses up to 8 megarad produces no significant change on either the C(V) or the G(V) characteristics of MOS tunnel junctions with intermediate oxide thicknesses (40-60 A), whereas the expected flat-band shift toward negative electrode voltages occurs in control thick oxide capacitors. A simple tunneling model would explain the results if the radiation-generated hole traps are assumed to lie below the valence band of the silicon. The experiments also suggest that the observed radiation-generated interface states in conventional MOS devices are not due to the radiation damage of the silicon surface.

Asymmetric ion trap

Science.gov (United States)

Barlow, Stephan E.; Alexander, Michael L.; Follansbee, James C.

1997-01-01

An ion trap having two end cap electrodes disposed asymmetrically about a center of a ring electrode. The inner surface of the end cap electrodes are conformed to an asymmetric pair of equipotential lines of the harmonic formed by the application of voltages to the electrodes. The asymmetry of the end cap electrodes allows ejection of charged species through the closer of the two electrodes which in turn allows for simultaneously detecting anions and cations expelled from the ion trap through the use of two detectors charged with opposite polarity.

The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

Science.gov (United States)

Narita, Tetsuo; Tokuda, Yutaka; Kogiso, Tatsuya; Tomita, Kazuyoshi; Kachi, Tetsu

2018-04-01

We investigated traps in lightly Mg-doped (2 × 1017 cm-3) p-GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on a freestanding GaN substrate and the subsequent post-growth annealing, using deep level transient spectroscopy. We identified four hole traps with energy levels of EV + 0.46, 0.88, 1.0, and 1.3 eV and one electron trap at EC - 0.57 eV in a p-type GaN layer uniformly doped with magnesium (Mg). The Arrhenius plot of hole traps with the highest concentration (˜3 × 1016 cm-3) located at EV + 0.88 eV corresponded to those of hole traps ascribed to carbon on nitrogen sites in n-type GaN samples grown by MOVPE. In fact, the range of the hole trap concentrations at EV + 0.88 eV was close to the carbon concentration detected by secondary ion mass spectroscopy. Moreover, the electron trap at EC - 0.57 eV was also identical to the dominant electron traps commonly observed in n-type GaN. Together, these results suggest that the trap states in the lightly Mg-doped GaN grown by MOVPE show a strong similarity to those in n-type GaN, which can be explained by the Fermi level close to the conduction band minimum in pristine MOVPE grown samples due to existing residual donors and Mg-hydrogen complexes.

ATRAP - Progress Towards Trapped Antihydrogen

International Nuclear Information System (INIS)

Grzonka, D.; Goldenbaum, F.; Oelert, W.; Sefzick, T.; Zhang, Z.; Comeau, D.; Hessels, E.A.; Storry, C.H.; Gabrielse, G.; Larochelle, P.; Lesage, D.; Levitt, B.; Speck, A.; Haensch, T.W.; Pittner, H.; Walz, J.

2005-01-01

The ATRAP experiment at the CERN antiproton decelerator AD aims for a test of the CPT invariance by a high precision comparison of the 1s-2s transition in the hydrogen and the antihydrogen atom.Antihydrogen production is routinely operated at ATRAP and detailed studies have been performed in order to optimize the production efficiency of useful antihydrogen.For high precision measurements of atomic transitions cold antihydrogen in the ground state is required which must be trapped due to the low number of available antihydrogen atoms compared to the cold hydrogen beam used for hydrogen spectroscopy. To ensure a reasonable antihydrogen trapping efficiency a magnetic trap has to be superposed the nested Penning trap. First trapping tests of charged particles within a combined magnetic/Penning trap have started at ATRAP

ATRAP Progress Towards Trapped Antihydrogen

CERN Document Server

Grzonka, D; Gabrielse, G; Goldenbaum, F; Hänsch, T W; Hessels, E A; Larochelle, P; Le Sage, D; Levitt, B; Oelert, W; Pittner, H; Sefzick, T; Speck, A; Storry, C H; Walz, J; Zhang, Z

2005-01-01

The ATRAP experiment at the CERN antiproton decelerator AD aims for a test of the CPT invariance by a high precision comparison of the 1s‐2s transition in the hydrogen and the antihydrogen atom. Antihydrogen production is routinely operated at ATRAP and detailed studies have been performed in order to optimize the production efficiency of useful antihydrogen. For high precision measurements of atomic transitions cold antihydrogen in the ground state is required which must be trapped due to the low number of available antihydrogen atoms compared to the cold hydrogen beam used for hydrogen spectroscopy. To ensure a reasonable antihydrogen trapping efficiency a magnetic trap has to be superposed the nested Penning trap. First trapping tests of charged particles within a combined magnetic/Penning trap have started at ATRAP.

Servo control of an optical trap.

Science.gov (United States)

Wulff, Kurt D; Cole, Daniel G; Clark, Robert L

2007-08-01

A versatile optical trap has been constructed to control the position of trapped objects and ultimately to apply specified forces using feedback control. While the design, development, and use of optical traps has been extensive and feedback control has played a critical role in pushing the state of the art, few comprehensive examinations of feedback control of optical traps have been undertaken. Furthermore, as the requirements are pushed to ever smaller distances and forces, the performance of optical traps reaches limits. It is well understood that feedback control can result in both positive and negative effects in controlled systems. We give an analysis of the trapping limits as well as introducing an optical trap with a feedback control scheme that dramatically improves an optical trap's sensitivity at low frequencies.

Numerical simulation of quantum efficiency and surface recombination in HgCdTe IR photon-trapping structures

Science.gov (United States)

Schuster, Jonathan; Bellotti, Enrico

2013-06-01

We have investigated the quantum effiency in HgCdTe photovoltaic pixel arrays employing a photon-trapping structure realized with a periodic array of pillars intended to provide broadband operation. We have found that the quantum efficiency depends heavily on the passivation of the pillar surface. Pillars passivated with anodicoxide have a large fixed positive charge on the pillar surface. We use our three-dimensional numerical simulation model to study the effect of surface charge and surface recombination velocity on the exterior of the pillars. We then evaluate the quantum efficiency of this structure subject to different surface conditions. We have found that by themselves, the surface charge and surface recombination are detrimental to the quantum efficiency but the quantum efficiency is recovered when both phenomena are present. We will discuss the effects of these phenomena and the trade offs that exist between the two.

Distinguishing bulk traps and interface states in deep-level transient spectroscopy

International Nuclear Information System (INIS)

Coelho, A V P; Adam, M C; Boudinov, H

2011-01-01

A new method for the distinction of discrete bulk deep levels and interface states related peaks in deep-level transient spectroscopy spectra is proposed. The measurement of two spectra using different reverse voltages while keeping pulse voltage fixed causes different peak maximum shifts in each case: for a reverse voltage modulus increase, a bulk deep-level related peak maximum will remain unchanged or shift towards lower temperatures while only interface states related peak maximum will be able to shift towards higher temperatures. This method has the advantage of being non-destructive and also works in the case of bulk traps with strong emission rate dependence on the electric field. Silicon MOS capacitors and proton implanted GaAs Schottky diodes were employed to experimentally test the method.

Spectroscopic analysis of electron trapping levels in pentacene field-effect transistors

International Nuclear Information System (INIS)

Bum Park, Chang

2014-01-01

Electron trapping phenomena have been investigated with respect to the energy levels of localized trap states and bias-induced device instability effects in pentacene field-effect transistors. The mechanism of the photoinduced threshold voltage shift (ΔV T ) is presented by providing a ΔV T model governed by the electron trapping. The trap-and-release behaviour functionalized by photo-irradiation also shows that the trap state for electrons is associated with the energy levels in different positions in the forbidden gap of pentacene. Spectroscopic analysis identifies two kinds of electron trap states distributed above and below the energy of 2.5 eV in the band gap of the pentacene crystal. The study of photocurrent spectra shows the specific trap levels of electrons in energy space that play a substantial role in causing device instability. The shallow and deep trapping states are distributed at two centroidal energy levels of ∼1.8 and ∼2.67 eV in the pentacene band gap. Moreover, we present a systematic energy profile of electron trap states in the pentacene crystal for the first time. (paper)

In-surface confinement of topological insulator nanowire surface states

International Nuclear Information System (INIS)

Chen, Fan W.; Jauregui, Luis A.; Tan, Yaohua; Manfra, Michael; Klimeck, Gerhard; Chen, Yong P.; Kubis, Tillmann

2015-01-01

The bandstructures of [110] and [001] Bi 2 Te 3 nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assumption that all topological insulator (TI) wire surfaces are equivalent is inappropriate. The Fermi velocity of chemically distinct wire surfaces differs significantly which creates an effective in-surface confinement potential. As a result, topological insulator surface states prefer specific surfaces. Therefore, experiments have to be designed carefully not to probe surfaces unfavorable to the surface states (low density of states) and thereby be insensitive to the TI-effects

In-surface confinement of topological insulator nanowire surface states

Energy Technology Data Exchange (ETDEWEB)

Chen, Fan W., E-mail: fanchen@purdue.edu [Department of Physics and Astronomy, Purdue, West Lafayette, Indiana 47907 (United States); Network for Computational Nanotechnology, Purdue, West Lafayette, Indiana 47907 (United States); Jauregui, Luis A. [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Tan, Yaohua [Network for Computational Nanotechnology, Purdue, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael [Department of Physics and Astronomy, Purdue, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Klimeck, Gerhard [Network for Computational Nanotechnology, Purdue, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Chen, Yong P. [Department of Physics and Astronomy, Purdue, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Kubis, Tillmann [Network for Computational Nanotechnology, Purdue, West Lafayette, Indiana 47907 (United States)

2015-09-21

The bandstructures of [110] and [001] Bi{sub 2}Te{sub 3} nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assumption that all topological insulator (TI) wire surfaces are equivalent is inappropriate. The Fermi velocity of chemically distinct wire surfaces differs significantly which creates an effective in-surface confinement potential. As a result, topological insulator surface states prefer specific surfaces. Therefore, experiments have to be designed carefully not to probe surfaces unfavorable to the surface states (low density of states) and thereby be insensitive to the TI-effects.

In-surface confinement of topological insulator nanowire surface states

Science.gov (United States)

Chen, Fan W.; Jauregui, Luis A.; Tan, Yaohua; Manfra, Michael; Klimeck, Gerhard; Chen, Yong P.; Kubis, Tillmann

2015-09-01

The bandstructures of [110] and [001] Bi2Te3 nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assumption that all topological insulator (TI) wire surfaces are equivalent is inappropriate. The Fermi velocity of chemically distinct wire surfaces differs significantly which creates an effective in-surface confinement potential. As a result, topological insulator surface states prefer specific surfaces. Therefore, experiments have to be designed carefully not to probe surfaces unfavorable to the surface states (low density of states) and thereby be insensitive to the TI-effects.

Algae commensal community in Genlisea traps

Directory of Open Access Journals (Sweden)

Konrad Wołowski

2011-01-01

Full Text Available The community of algae occurring in Genlisea traps and on the external traps surface in laboratory conditions were studied. A total of 29 taxa were found inside the traps, with abundant diatoms, green algae (Chlamydophyceae and four morphotypes of chrysophytes stomatocysts. One morphotype is described as new for science. There are two ways of algae getting into Genlisea traps. The majority of those recorded inside the traps, are mobile; swimming freely by flagella or moving exuding mucilage like diatoms being ablate to colonize the traps themselves. Another possibility is transport of algae by invertebrates such as mites and crustaceans. In any case algae in the Genlisea traps come from the surrounding environment. Two dominant groups of algae (Chladymonas div. and diatoms in the trap environment, show ability to hydrolyze phosphomonoseters. We suggest that algae in carnivorous plant traps can compete with plant (host for organic phosphate (phosphomonoseters. From the spectrum and ecological requirements of algal species found in the traps, environment inside the traps seems to be acidic. However, further studies are needed to test the relations between algae and carnivorous plants both in laboratory conditions and in the natural environment. All the reported taxa are described briefly and documented with 74 LM and SEM micrographs.

Co-existence of free and self-trapped excitons in J-aggregates

International Nuclear Information System (INIS)

Malyukin, Yu.V.; Lebedenko, A.N.; Sorokin, A.V.; Yefimova, S.L.

2005-01-01

Nature of excited electronic states of amphi-PIC J-aggregates, which are the source of the self-trapping states, have been investigated using low-temperature site-selective, time-resolved spectroscopy techniques. The self-trapping states are shown to evolve from the delocalized exciton states within the J-band. The strongly localized electronic states located on the low-frequency edge of the J-band, are not able to form polaronic states and, hence, the polaronic relaxation process is particularly collective one. The exciton self-trapping is more effective in J-aggregates with strong disorder, requires overcoming a self-trapping barrier

Electromagnetic trapping of neutral atoms

International Nuclear Information System (INIS)

Metcalf, H.J.

1986-01-01

Cooling and trapping of neutral atoms is a new branch of applied physics that has potential for application in many areas. The authors present an introduction to laser cooling and magnetic trapping. Some basic ideas and fundamental limitations are discussed, and the first successful experiments are reviewed. Trapping a neutral object depends on the interaction between an inhomogeneous electromagnetic field and a multiple moment that results in the exchange of kinetic for potential energy. In neutral atom traps, the potential energy must be stored as internal atomic energy, resulting in two immediate and extremely important consequences. First, the atomic energy levels will necessarily shift as the atoms move in the trap, and, second, practical traps for ground state neutral atoms atr necessarily very shallow compared to thermal energy. This small depth also dictates stringent vacuum requirements because a trapped atom cannot survive a single collision with a thermal energy background gas molecule. Neutral trapping, therefore, depends on substantial cooling of a thermal atomic sample and is inextricably connected with the cooling process

Electronic excited states as a probe of surface adsorbate structure and dynamics in liquid xenon

Energy Technology Data Exchange (ETDEWEB)

Peterson, E.S.

1992-08-01

A combination of second harmonic generation (SHG) and a simple dipole-dipole interaction model is presented as a new technique for determining adsorbate geometries on surfaces. The polarization dependence of SHG is used to define possible geometries of the adsorbate about the surface normal. Absorption band shifts using geometry constraints imposed by SHG data are derived for a dimer constructed from two arbitrarily placed monomers on the surface using the dipole-dipole interaction potential. These formulae can be used to determine the orientation of the two monomers relative to each other. A simplified version of this formalism is used to interpret absorption band shifts for rhodamine B adsorbed on fused silica. A brief history of the exciton is given with particular detail to Xe. Data are presented for transient absorption at RT in liquid xenon on the picosecond time scale. These are observations of both tunneling through the barrier that separates the free and trapped exciton states and the subsequent trapping of the exciton. In high densities both of these processes are found to occur within 2 to 6 picoseconds in agreement with theories of Kmiecik and Schreiber and of Martin. A threshold density is observed that separates relaxation via single binary collisions and relaxation that proceeds via Martin's resonant energy transfer hopping mechanism.

Rotational states of Bose gases with attractive interactions in anharmonic traps

International Nuclear Information System (INIS)

Lundh, Emil; Collin, Anssi; Suominen, Kalle-Antti

2004-01-01

A rotated and harmonically trapped Bose gas with attractive interactions is expected to either remain stationary or escape from the trap. Here we report that, on the contrary, in an anharmonic trapping potential the Bose gas with attractive interactions responds to external rotation very differently, namely, through center-of-mass motion or by formation of vortices

Impact of nitrogen doping of niobium superconducting cavities on the sensitivity of surface resistance to trapped magnetic flux

Science.gov (United States)

Gonnella, Dan; Kaufman, John; Liepe, Matthias

2016-02-01

Future particle accelerators such as the SLAC "Linac Coherent Light Source-II" (LCLS-II) and the proposed Cornell Energy Recovery Linac require hundreds of superconducting radio-frequency (SRF) niobium cavities operating in continuous wave mode. In order to achieve economic feasibility of projects such as these, the cavities must achieve a very high intrinsic quality factor (Q0) to keep cryogenic losses within feasible limits. To reach these high Q0's in the case of LCLS-II, nitrogen-doping of niobium cavities has been selected as the cavity preparation technique. When dealing with Q0's greater than 1 × 1010, the effects of ambient magnetic field on Q0 become significant. Here, we show that the sensitivity to RF losses from trapped magnetic field in a cavity's walls is strongly dependent on the cavity preparation. Specifically, standard electropolished and 120 °C baked cavities show a sensitivity of residual resistance from trapped magnetic flux of ˜0.6 and ˜0.8 nΩ/mG trapped, respectively, while nitrogen-doped cavities show a higher sensitivity of residual resistance from trapped magnetic flux of ˜1 to 5 nΩ/mG trapped. We show that this difference in sensitivities is directly related to the mean free path of the RF surface layer of the niobium: shorter mean free paths lead to less sensitivity of residual resistance to trapped magnetic flux in the dirty limit (ℓ ≪ ξ0), while longer mean free paths lead to lower sensitivity of residual resistance to trapped magnetic flux in the clean limit (ℓ ≫ ξ0). These experimental results are also shown to have good agreement with recent theoretical predictions for pinned vortex lines oscillating in RF fields.

Electrodynamically trapped Yb+ ions for quantum information processing

International Nuclear Information System (INIS)

Balzer, Chr.; Braun, A.; Hannemann, T.; Wunderlich, Chr.; Paape, Chr.; Ettler, M.; Neuhauser, W.

2006-01-01

Highly efficient, nearly deterministic, and isotope selective generation of Yb + ions by one- and two-color photoionization is demonstrated. State preparation and state selective detection of hyperfine states in 171 Yb + is investigated in order to optimize the purity of the prepared state and to time-optimize the detection process. Linear laser-cooled Yb + ion crystals confined in a Paul trap are demonstrated. Advantageous features of different previous ion trap experiments are combined, while at the same time the number of possible error sources is reduced by using a comparatively simple experimental apparatus. This opens a new path toward quantum state manipulation of individual trapped ions, and in particular, to scalable quantum computing

Spatial mismatch between sea lamprey behaviour and trap location explains low success at trapping for control

Science.gov (United States)

Rous, Andrew M.; McLean, Adrienne R.; Barber, Jessica; Bravener, Gale; Castro-Santos, Theodore; Holbrook, Christopher M.; Imre, Istvan; Pratt, Thomas C.; McLaughlin, Robert L.

2017-01-01

Crucial to the management of invasive species is understanding space use and the environmental features affecting space use. Improved understanding of space use by invasive sea lamprey (Petromyzon marinus) could help researchers discern why trap success in large rivers is lower than needed for effective control. We tested whether manipulating discharge nightly could increase trap success at a hydroelectric generating station on the St. Marys River. We quantified numbers of acoustically tagged sea lampreys migrating up to, and their space use at, the hydroelectric generating station. In 2011 and 2012, 78% and 68%, respectively, of tagged sea lampreys reached the generating station. Sea lampreys were active along the face, but more likely to occur at the bottom and away from the traps near the surface, especially when discharge was high. Our findings suggest that a low probability of encountering traps was due to spatial (vertical) mismatch between space use by sea lamprey and trap locations and that increasing discharge did not alter space use in ways that increased trap encounter. Understanding space use by invasive species can help managers assess the efficacy of trapping and ways of improving trapping success.

Loading an Optical Trap with Diamond Nanocrystals Containing Nitrogen-Vacancy Centers from a Surface

Science.gov (United States)

Hsu, Jen-Feng; Ji, Peng; Dutt, M. V. Gurudev; D'Urso, Brian R.

2015-03-01

We present a simple and effective method of loading particles into an optical trap. Our primary application of this method is loading photoluminescent material, such as diamond nanocrystals containing nitrogen-vacancy (NV) centers, for coupling the mechanical motion of the trapped crystal with the spin of the NV centers. Highly absorptive material at the trapping laser frequency, such as tartrazine dye, is used as media to attach nanodiamonds and burn into a cloud of air-borne particles as the material is swept near the trapping laser focus on a glass slide. Particles are then trapped with the laser used for burning or transferred to a second laser trap at a different wavelength. Evidence of successful loading diamond nanocrystals into the trap presented includes high sensitivity of the photoluminecscence (PL) to the excitation laser and the PL spectra of the optically trapped particles

3D-Printed external light traps for solar cells

NARCIS (Netherlands)

van Dijk, L.; Paetzold, U.W.; Blab, Gerhard; Marcus, E.A.P.; Oostra, A.J.; van de Groep, J.; Polman, A.; Schropp, R.E.I.; Di Vece, M.

2015-01-01

We demonstrate a universally applicable 3D-printed external light trap for solar cells. We placed a macroscopic external light trap made of smoothened, silver coated plastic at the sun-facing surface of different types of solar cells. The trap consists of a reflective parabolic concentrator on top

C60 as an Atom Trap to Capture Co Adatoms

DEFF Research Database (Denmark)

Yang, Peng; Li, Dongzhe; Repain, Vincent

2015-01-01

C60 molecules were used to trap Co adatoms and clusters on a Au(111) surface using atomic/molecular manipulation with a scanning tunneling microscope. Two manipulation pathways (successive integration of single Co atoms in one molecule or direct integration of a Co cluster) were found...... to efficiently allow the formation of complexes mixing a C60 molecule with Co atoms. Scanning tunneling spectroscopy reveals the robustness of the pi states of C60 that are preserved after Co trapping. Scanning tunneling microscopy images and density functional theory calculations reveal that dissociated Co...... clusters of up to nine atoms can be formed at the molecule-substrate interface. These results open new perspectives in the interactions between metal adatoms and molecules, for applications in metal-organic devices...

Quantum Information Experiments with Trapped Ions at NIST

Science.gov (United States)

Wilson, Andrew

2015-03-01

We present an overview of recent trapped-ion quantum information experiments at NIST. Advancing beyond few-qubit ``proof-of-principle'' experiments to the many-qubit systems needed for practical quantum simulation and information processing, without compromising on the performance demonstrated with small systems, remains a major challenge. One approach to scalable hardware development is surface-electrode traps. Micro-fabricated planar traps can have a number of useful features, including flexible electrode geometries, integrated microwave delivery, and spatio-temporal tuning of potentials for ion transport and spin-spin interactions. In this talk we report on a number of on-going investigations with surface traps. Experiments feature a multi-zone trap with closely spaced ions in a triangular arrangement (a first step towards 2D arrays of ions with tunable spin-spin interactions), a scheme for smooth transport through a junction in a 2D structure based on switchable RF potentials, and a micro-fabricated photo-detector integrated into a trap. We also give a progress report on our latest efforts to improve the fidelity of both optical and microwave 2-qubit gates. This work was supported by IARPA, ONR and the NIST Quantum Information Program. The 3-ion and switchable-RF-junction traps were developed in collaboration with Sandia National Laboratory.

Electron spectroscopy of nanodiamond surface states

Energy Technology Data Exchange (ETDEWEB)

Belobrov, P.I.; Bursill, L.A.; Maslakov, K.I.; Dementjev, A.P

2003-06-15

Electronic states of nanodiamond (ND) were investigated by PEELS, XPS and CKVV Auger spectra. Parallel electron energy loss spectra (PEELS) show that the electrons inside of ND particles are sp{sup 3} hybridized but there is a surface layer containing distinct hybridized states. The CKVV Auger spectra imply that the HOMO of the ND surface has a shift of 2.5 eV from natural diamond levels of {sigma}{sub p} up to the Fermi level. Hydrogen (H) treatment of natural diamond surface produces a chemical state indistinguishable from that of ND surfaces using CKVV. The ND electronic structure forms {sigma}{sub s}{sup 1}{sigma}{sub p}{sup 2}{pi}{sup 1} surface states without overlapping of {pi}-levels. Surface electronic states, including surface plasmons, as well as phonon-related electronic states of the ND surface are also interesting and may also be important for field emission mechanisms from the nanostructured diamond surface.

Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications

International Nuclear Information System (INIS)

Zhang, Y.; Shao, Y. Y.; Lu, X. B.; Zeng, M.; Zhang, Z.; Gao, X. S.; Zhang, X. J.; Liu, J.-M.; Dai, J. Y.

2014-01-01

In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO 2 -Si (MHOS) structure. The devices based on 800 °C annealed HfO 2 film exhibit a large memory window of ∼5.1 V under ±10 V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 10 4  s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO 2 films. We investigated the defect states in the HfO 2 films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO 2 based MHOS devices.

Electron transfer from electronic excited states to sub-vacuum electron traps in amorphous ice

International Nuclear Information System (INIS)

Vichnevetski, E.; Bass, A.D.; Sanche, L.

2000-01-01

We investigate the electron stimulated yield of electronically excited argon atoms (Ar * ) from monolayer quantities of Ar deposited onto thin films of amorphous ice. Two peaks of narrow width ( - electron-exciton complex into exciton states, by the transfer of an electron into a sub-vacuum electron state within the ice film. However, the 10.7 eV feature is shifted to lower energy since electron attachment to Ar occurs within small pores of amorphous ice. In this case, the excess electron is transferred into an electron trap below the conduction band of the ice layer

WATER-TRAPPED WORLDS

International Nuclear Information System (INIS)

Menou, Kristen

2013-01-01

Although tidally locked habitable planets orbiting nearby M-dwarf stars are among the best astronomical targets to search for extrasolar life, they may also be deficient in volatiles and water. Climate models for this class of planets show atmospheric transport of water from the dayside to the nightside, where it is precipitated as snow and trapped as ice. Since ice only slowly flows back to the dayside upon accumulation, the resulting hydrological cycle can trap a large amount of water in the form of nightside ice. Using ice sheet dynamical and thermodynamical constraints, I illustrate how planets with less than about a quarter the Earth's oceans could trap most of their surface water on the nightside. This would leave their dayside, where habitable conditions are met, potentially dry. The amount and distribution of residual liquid water on the dayside depend on a variety of geophysical factors, including the efficiency of rock weathering at regulating atmospheric CO 2 as dayside ocean basins dry up. Water-trapped worlds with dry daysides may offer similar advantages as land planets for habitability, by contrast with worlds where more abundant water freely flows around the globe

WATER-TRAPPED WORLDS

Energy Technology Data Exchange (ETDEWEB)

Menou, Kristen [Department of Astronomy, Columbia University, 550 West 120th Street, New York, NY 10027 (United States)

2013-09-01

Although tidally locked habitable planets orbiting nearby M-dwarf stars are among the best astronomical targets to search for extrasolar life, they may also be deficient in volatiles and water. Climate models for this class of planets show atmospheric transport of water from the dayside to the nightside, where it is precipitated as snow and trapped as ice. Since ice only slowly flows back to the dayside upon accumulation, the resulting hydrological cycle can trap a large amount of water in the form of nightside ice. Using ice sheet dynamical and thermodynamical constraints, I illustrate how planets with less than about a quarter the Earth's oceans could trap most of their surface water on the nightside. This would leave their dayside, where habitable conditions are met, potentially dry. The amount and distribution of residual liquid water on the dayside depend on a variety of geophysical factors, including the efficiency of rock weathering at regulating atmospheric CO{sub 2} as dayside ocean basins dry up. Water-trapped worlds with dry daysides may offer similar advantages as land planets for habitability, by contrast with worlds where more abundant water freely flows around the globe.

Energy storage and dispersion of surface acoustic waves trapped in a periodic array of mechanical resonators

DEFF Research Database (Denmark)

Dühring, Maria Bayard; Laude, Vincent; Khelif, Abdelkrim

2009-01-01

It has been shown previously that surface acoustic waves can be efficiently trapped and slowed by steep ridges on a piezoelectric substrate, giving rise to two families of shear-horizontal and vertically polarized surface waves. The mechanisms of energy storage and dispersion are explored by using...... the finite element method to model surface acoustic waves generated by high aspect ratio electrodes. A periodic model is proposed including a perfectly matched layer to simulate radiation conditions away from the sources, from which the modal distributions are found. The ratio of the mechanical energy...... confined to the electrode as compared to the total mechanical energy is calculated and is found to be increasing for increasing aspect ratio and to tend to a definite limit for the two families of surface waves. This observation is in support of the interpretation that high aspect ratio electrodes act...

Physics with Trapped Antihydrogen

Science.gov (United States)

Charlton, Michael

2017-04-01

For more than a decade antihydrogen atoms have been formed by mixing antiprotons and positrons held in arrangements of charged particle (Penning) traps. More recently, magnetic minimum neutral atom traps have been superimposed upon the anti-atom production region, promoting the trapping of a small quantity of the antihydrogen yield. We will review these advances, and describe some of the first physics experiments performed on anrtihydrogen including the observation of the two-photon 1S-2S transition, invesigation of the charge neutrailty of the anti-atom and studies of the ground state hyperfine splitting. We will discuss the physics motivations for undertaking these experiments and describe some near-future initiatives.

MIGRATION TRAPS IN DISKS AROUND SUPERMASSIVE BLACK HOLES

International Nuclear Information System (INIS)

Bellovary, Jillian M.; Low, Mordecai-Mark Mac; McKernan, Barry; Ford, K. E. Saavik

2016-01-01

Accretion disks around supermassive black holes (SMBHs) in active galactic nuclei (AGNs) contain stars, stellar mass black holes, and other stellar remnants, which perturb the disk gas gravitationally. The resulting density perturbations exert torques on the embedded masses causing them to migrate through the disk in a manner analogous to planets in protoplanetary disks. We determine the strength and direction of these torques using an empirical analytic description dependent on local disk gradients, applied to two different analytic, steady-state disk models of SMBH accretion disks. We find that there are radii in such disks where the gas torque changes sign, trapping migrating objects. Our analysis shows that major migration traps generally occur where the disk surface density gradient changes sign from positive to negative, around 20–300R g , where R g  = 2GM/c 2 is the Schwarzschild radius. At these traps, massive objects in the AGN disk can accumulate, collide, scatter, and accrete. Intermediate mass black hole formation is likely in these disk locations, which may lead to preferential gap and cavity creation at these radii. Our model thus has significant implications for SMBH growth as well as gravitational wave source populations

Optical Forces on Non-Spherical Nanoparticles Trapped by Optical Waveguides

Science.gov (United States)

Hasan Ahmed, Dewan; Sung, Hyung Jin

2011-07-01

Numerical simulations of a solid-core polymer waveguide structure were performed to calculate the trapping efficiencies of particles with nanoscale dimensions smaller than the wavelength of the trapping beam. A three-dimensional (3-D) finite element method was employed to calculate the electromagnetic field. The inlet and outlet boundary conditions were obtained using an eigenvalue solver to determine the guided and evanescent mode profiles. The Maxwell stress tensor was considered for the calculation of the transverse and downward trapping efficiencies. A particle at the center of the waveguide showed minimal transverse trapping efficiency and maximal downward trapping efficiency. This trend gradually reversed as the particle moved away from the center of the waveguide. Particles with larger surface areas exhibited higher trapping efficiencies and tended to be trapped near the waveguide. Particles displaced from the wave input tended to be trapped at the waveguide surface. Simulation of an ellipsoidal particle showed that the orientation of the major axis along the waveguide's lateral z-coordinate significantly influenced the trapping efficiency. The particle dimensions along the z-coordinate were more critical than the gap distance (vertical displacement from the floor of the waveguide) between the ellipsoid particle and the waveguide. The present model was validated using the available results reported in the literature for different trapping efficiencies.

Femtosecond Study of Self-Trapped Vibrational Excitons in Crystalline Acetanilide

Science.gov (United States)

Edler, J.; Hamm, P.; Scott, A. C.

2002-02-01

Femtosecond IR spectroscopy of delocalized NH excitations of crystalline acetanilide confirms that self-trapping in hydrogen-bonded peptide units exists and does stabilize the excitation. Two phonons with frequencies of 48 and 76 cm -1 are identified as the major degrees of freedom that mediate self-trapping. After selective excitation of the free exciton, self-trapping occurs within a few 100 fs. Excitation of the self-trapped states disappears from the spectral window of this investigation on a 1 ps time scale, followed by a slow ground state recovery of the hot ground state within 18 ps.

Cryogenic setup for trapped ion quantum computing.

Science.gov (United States)

Brandl, M F; van Mourik, M W; Postler, L; Nolf, A; Lakhmanskiy, K; Paiva, R R; Möller, S; Daniilidis, N; Häffner, H; Kaushal, V; Ruster, T; Warschburger, C; Kaufmann, H; Poschinger, U G; Schmidt-Kaler, F; Schindler, P; Monz, T; Blatt, R

2016-11-01

We report on the design of a cryogenic setup for trapped ion quantum computing containing a segmented surface electrode trap. The heat shield of our cryostat is designed to attenuate alternating magnetic field noise, resulting in 120 dB reduction of 50 Hz noise along the magnetic field axis. We combine this efficient magnetic shielding with high optical access required for single ion addressing as well as for efficient state detection by placing two lenses each with numerical aperture 0.23 inside the inner heat shield. The cryostat design incorporates vibration isolation to avoid decoherence of optical qubits due to the motion of the cryostat. We measure vibrations of the cryostat of less than ±20 nm over 2 s. In addition to the cryogenic apparatus, we describe the setup required for an operation with 40 Ca + and 88 Sr + ions. The instability of the laser manipulating the optical qubits in 40 Ca + is characterized by yielding a minimum of its Allan deviation of 2.4 ⋅ 10 -15 at 0.33 s. To evaluate the performance of the apparatus, we trapped 40 Ca + ions, obtaining a heating rate of 2.14(16) phonons/s and a Gaussian decay of the Ramsey contrast with a 1/e-time of 18.2(8) ms.

A simple model for the trapping of deuterons in a carbon target

International Nuclear Information System (INIS)

Erents, S.K.; Hotston, E.S.

1980-01-01

A model is proposed for the trapping of deuterons in an annealed carbon target. The deuterons are assumed to be lodged in traps which are created by the ion beam implanting the deuterons. There is a saturation trap density of 6.8 x 10 22 cm -3 . A deuteron in a region of the target where all the traps are filled is free to execute a random walk until it finds a vacant trap or is released from the target surface. The number of ions trapped per unit area of the target surface has been calculated as a function of ion fluence and is in good agreement with the experimental results. (orig.)

Does Pressure Accentuate General Relativistic Gravitational Collapse and Formation of Trapped Surfaces?

Science.gov (United States)

Mitra, Abhas

2013-04-01

It is widely believed that though pressure resists gravitational collapse in Newtonian gravity, it aids the same in general relativity (GR) so that GR collapse should eventually be similar to the monotonous free fall case. But we show that, even in the context of radiationless adiabatic collapse of a perfect fluid, pressure tends to resist GR collapse in a manner which is more pronounced than the corresponding Newtonian case and formation of trapped surfaces is inhibited. In fact there are many works which show such collapse to rebound or become oscillatory implying a tug of war between attractive gravity and repulsive pressure gradient. Furthermore, for an imperfect fluid, the resistive effect of pressure could be significant due to likely dramatic increase of tangential pressure beyond the "photon sphere." Indeed, with inclusion of tangential pressure, in principle, there can be static objects with surface gravitational redshift z → ∞. Therefore, pressure can certainly oppose gravitational contraction in GR in a significant manner in contradiction to the idea of Roger Penrose that GR continued collapse must be unstoppable.

Self-Consistent Approach to Global Charge Neutrality in Electrokinetics: A Surface Potential Trap Model

Directory of Open Access Journals (Sweden)

Li Wan

2014-03-01

Full Text Available In this work, we treat the Poisson-Nernst-Planck (PNP equations as the basis for a consistent framework of the electrokinetic effects. The static limit of the PNP equations is shown to be the charge-conserving Poisson-Boltzmann (CCPB equation, with guaranteed charge neutrality within the computational domain. We propose a surface potential trap model that attributes an energy cost to the interfacial charge dissociation. In conjunction with the CCPB, the surface potential trap can cause a surface-specific adsorbed charge layer σ. By defining a chemical potential μ that arises from the charge neutrality constraint, a reformulated CCPB can be reduced to the form of the Poisson-Boltzmann equation, whose prediction of the Debye screening layer profile is in excellent agreement with that of the Poisson-Boltzmann equation when the channel width is much larger than the Debye length. However, important differences emerge when the channel width is small, so the Debye screening layers from the opposite sides of the channel overlap with each other. In particular, the theory automatically yields a variation of σ that is generally known as the “charge regulation” behavior, attendant with predictions of force variation as a function of nanoscale separation between two charged surfaces that are in good agreement with the experiments, with no adjustable or additional parameters. We give a generalized definition of the ζ potential that reflects the strength of the electrokinetic effect; its variations with the concentration of surface-specific and surface-nonspecific salt ions are shown to be in good agreement with the experiments. To delineate the behavior of the electro-osmotic (EO effect, the coupled PNP and Navier-Stokes equations are solved numerically under an applied electric field tangential to the fluid-solid interface. The EO effect is shown to exhibit an intrinsic time dependence that is noninertial in its origin. Under a step-function applied

The use (and misuse) of sediment traps in coral reef environments: Theory, observations, and suggested protocols

Science.gov (United States)

Storlazzi, C.D.; Field, M.E.; Bothner, Michael H.

2011-01-01

Sediment traps are commonly used as standard tools for monitoring “sedimentation” in coral reef environments. In much of the literature where sediment traps were used to measure the effects of “sedimentation” on corals, it is clear from deployment descriptions and interpretations of the resulting data that information derived from sediment traps has frequently been misinterpreted or misapplied. Despite their widespread use in this setting, sediment traps do not provide quantitative information about “sedimentation” on coral surfaces. Traps can provide useful information about the relative magnitude of sediment dynamics if trap deployment standards are used. This conclusion is based first on a brief review of the state of knowledge of sediment trap dynamics, which has primarily focused on traps deployed high above the seabed in relatively deep water, followed by our understanding of near-bed sediment dynamics in shallow-water environments that characterize coral reefs. This overview is followed by the first synthesis of near-bed sediment trap data collected with concurrent hydrodynamic information in coral reef environments. This collective information is utilized to develop nine protocols for using sediment traps in coral reef environments, which focus on trap parameters that researchers can control such as trap height (H), trap mouth diameter (D), the height of the trap mouth above the substrate (z o ), and the spacing between traps. The hydrodynamic behavior of sediment traps and the limitations of data derived from these traps should be forefront when interpreting sediment trap data to infer sediment transport processes in coral reef environments.

Topological surface states scattering in antimony

KAUST Repository

Narayan, Awadhesh

2012-11-05

In this work we study the topologically protected states of the Sb(111) surface by using ab initio transport theory. In the presence of a strong surface perturbation we obtain standing-wave states resulting from the superposition of spin-polarized surface states. By Fourier analysis, we identify the underlying two dimensional scattering processes and the spin texture. We find evidence of resonant transmission across surface barriers at quantum well state energies and evaluate their lifetimes. Our results are in excellent agreement with experimental findings. We also show that despite the presence of a step edge along a different high-symmetry direction, the surface states exhibit unperturbed transmission around the Fermi energy for states with near to normal incidence. © 2012 American Physical Society.

Topological surface states scattering in antimony

KAUST Repository

Narayan, Awadhesh; Rungger, Ivan; Sanvito, Stefano

2012-01-01

In this work we study the topologically protected states of the Sb(111) surface by using ab initio transport theory. In the presence of a strong surface perturbation we obtain standing-wave states resulting from the superposition of spin-polarized surface states. By Fourier analysis, we identify the underlying two dimensional scattering processes and the spin texture. We find evidence of resonant transmission across surface barriers at quantum well state energies and evaluate their lifetimes. Our results are in excellent agreement with experimental findings. We also show that despite the presence of a step edge along a different high-symmetry direction, the surface states exhibit unperturbed transmission around the Fermi energy for states with near to normal incidence. © 2012 American Physical Society.

High-Fidelity Trapped-Ion Quantum Logic Using Near-Field Microwaves.

Science.gov (United States)

Harty, T P; Sepiol, M A; Allcock, D T C; Ballance, C J; Tarlton, J E; Lucas, D M

2016-09-30

We demonstrate a two-qubit logic gate driven by near-field microwaves in a room-temperature microfabricated surface ion trap. We introduce a dynamically decoupled gate method, which stabilizes the qubits against fluctuating energy shifts and avoids the need to null the microwave field. We use the gate to produce a Bell state with fidelity 99.7(1)%, after accounting for state preparation and measurement errors. The gate is applied directly to ^{43}Ca^{+} hyperfine "atomic clock" qubits (coherence time T_{2}^{*}≈50  s) using the oscillating magnetic field gradient produced by an integrated microwave electrode.

Surface states in photonic crystals

Directory of Open Access Journals (Sweden)

Vojtíšek P.

2013-05-01

Full Text Available Among many unusual and interesting physical properties of photonic crystals (PhC, in recent years, the propagation of surface electromagnetic waves along dielectric PhC boundaries have attracted considerable attention, also in connection to their possible applications. Such surfaces states, produced with the help of specialized defects on PhC boundaries, similarly to surfaces plasmons, are localized surfaces waves and, as such, can be used in various sensing applications. In this contribution, we present our recent studies on numerical modelling of surface states (SS for all three cases of PhC dimensionality. Simulations of these states were carried out by the use of plane wave expansion (PWE method via the MIT MPB package.

Abnormal Multiple Charge Memory States in Exfoliated Few-Layer WSe2 Transistors.

Science.gov (United States)

Chen, Mikai; Wang, Yifan; Shepherd, Nathan; Huard, Chad; Zhou, Jiantao; Guo, L J; Lu, Wei; Liang, Xiaogan

2017-01-24

To construct reliable nanoelectronic devices based on emerging 2D layered semiconductors, we need to understand the charge-trapping processes in such devices. Additionally, the identified charge-trapping schemes in such layered materials could be further exploited to make multibit (or highly desirable analog-tunable) memory devices. Here, we present a study on the abnormal charge-trapping or memory characteristics of few-layer WSe 2 transistors. This work shows that multiple charge-trapping states with large extrema spacing, long retention time, and analog tunability can be excited in the transistors made from mechanically exfoliated few-layer WSe 2 flakes, whereas they cannot be generated in widely studied few-layer MoS 2 transistors. Such charge-trapping characteristics of WSe 2 transistors are attributed to the exfoliation-induced interlayer deformation on the cleaved surfaces of few-layer WSe 2 flakes, which can spontaneously form ambipolar charge-trapping sites. Our additional results from surface characterization, charge-retention characterization at different temperatures, and density functional theory computation strongly support this explanation. Furthermore, our research also demonstrates that the charge-trapping states excited in multiple transistors can be calibrated into consistent multibit data storage levels. This work advances the understanding of the charge memory mechanisms in layered semiconductors, and the observed charge-trapping states could be further studied for enabling ultralow-cost multibit analog memory devices.

Trapping Phyllophaga spp. (Coleoptera: Scarabaeidae: Melolonthinae) in the United States and Canada using sex attractants

Science.gov (United States)

Paul S. Robbins; Steven R. Alm; Charles D. Armstrong; Anne L. Averill; Thomas C. Baker; Robert J. Bauernfiend; Frederick P. Baxendale; S. Kris Braman; Rick L. Brandenburg; Daniel B. Cash; Gary J. Couch; Richard S. Cowles; Robert L. Crocker; Zandra D. DeLamar; Timothy G. Dittl; Sheila M. Fitzpatrick; Kathy L. Flanders; Tom Forgatsch; Timothy J. Gibb; Bruce D. Gill; Daniel O. Gilrein; Clyde S. Gorsuch; Abner M. Hammond; Patricia D. Hastings; David W. Held; Paul R. Heller; Rose T. Hiskes; James L. Holliman; William G. Hudson; Michael G. Klein; Vera L. Krischik; David J. Lee; Charles E. Linn; Nancy J. Luce; Kenna E. MacKenzie; Catherine M. Mannion; Sridhar Polavarapu; Daniel A. Potter; Wendell L. Roelofs; Brian M. Rovals; Glenn A. Salsbury; Nathan M. Schiff; David J. Shetlar; Margaret Skinner; Beverly L. Sparks; Jessica A. Sutschek; Timothy P. Sutschek; Stanley R. Swier; Martha M. Sylvia; Niel J. Vickers; Patricia J. Vittum; Richard Weidman; Donald C. Weber; R. Chris Williamson; Michael G. Villani

2006-01-01

The sex pheromone of the scarab beetle, Phyllophaga anxia, is a blend of the methyl esters of two amino acids, L-valine and L-isoleucine. A field trapping study was conducted, deploying different blends of the two compounds at 59 locations in the United States and Canada. More than 57,000 males of 61 Phyllophaga species (Coleoptera...

New elements to understand hydrogen diffusion and trapping mechanisms in quenched and tempered HSLA martensitic steels

International Nuclear Information System (INIS)

Frappart, S.

2011-01-01

Hydrogen Embrittlement is a complex phenomenon responsible of metal degradation. It mainly depends on the material (chemical composition, heat treatment), the environment or the mechanical state. The main goal of this study is to give new elements to understand hydrogen diffusion and trapping mechanisms in High Strength Low Alloy martensitic steels used in the field of 'Oil and Gas' applications and nuclear industry. In this way, the purpose is to identify hydrogen trapping sites related to microstructural features as a basis for a better knowledge concerning hydrogen embrittlement. Thus, accurate electrochemical permeation set-up (with or without a mechanical state) were developed as well as a procedure to thoroughly analyze experimental data. An original approach on how to interpret electrochemical permeation results has been therefore performed. Afterward, the effect of different critical parameters has been assessed i.e. the membrane thickness, the surface state of the detection side as well as the microstructure and the mechanical state. The relationship between physical parameters associated to diffusion and trapping with the microstructure evolution will give rise to a first thought 'toward the embrittlement'

Quantitative analysis of trap states through the behavior of the sulfur ions in MoS2 FETs following high vacuum annealing

Science.gov (United States)

Bae, Hagyoul; Jun, Sungwoo; Kim, Choong-Ki; Ju, Byeong-Kwon; Choi, Yang-Kyu

2018-03-01

Few-layer molybdenum disulfide (MoS2) has attracted a great deal of attention as a semiconductor material for electronic and optoelectronic devices. However, the presence of localized states inside the bandgap is a critical issue that must be addressed to improve the applicability of MoS2 technology. In this work, we investigated the density of states (DOS: g(E)) inside the bandgap of MoS2 FET by using a current-voltage (I-V) analysis technique with the aid of high vacuum annealing (HVA). The g(E) can be obtained by combining the trap density and surface potential (ψ S) extracted from a consistent subthreshold current (I D-sub). The electrical performance of MoS2 FETs is strongly dependent on the inherent defects, which are closely related to the g(E) in the MoS2 active layer. By applying the proposed technique to the MoS2 FETs, we were able to successfully characterize the g(E) after stabilization of the traps by the HVA, which reduces the hysteresis distorting the intrinsic g(E). Also, the change of sulfur ions in MoS2 film before and after the HVA treatment is investigated directly by Auger electron spectroscopy analysis. The proposed technique provides a new methodology for active channel engineering of 2D channel based FETs such as MoS2, MoTe2, WSe2, and WS2.

Ground-state and rotational properties of a two-component Bose–Einstein condensate in a harmonic plus quartic trap

Energy Technology Data Exchange (ETDEWEB)

Chen, Guang-Ping [Key Laboratory of Time and Frequency Primary Standards, National Time Service Center, Chinese Academy of Sciences, Xi' an 710600 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Zhi-Yuan [The School of Physics and Mech-tronic Engineering, Sichuan University of Art and Science, DaZhou 635000 (China); Dong, Biao [Key Laboratory of Time and Frequency Primary Standards, National Time Service Center, Chinese Academy of Sciences, Xi' an 710600 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Wang, Lin-Xue [College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070 (China); Zhang, Xiao-Fei, E-mail: xfzhang@ntsc.ac.cn [Key Laboratory of Time and Frequency Primary Standards, National Time Service Center, Chinese Academy of Sciences, Xi' an 710600 (China); Zhang, Shou-Gang, E-mail: szhang@ntsc.ac.cn [Key Laboratory of Time and Frequency Primary Standards, National Time Service Center, Chinese Academy of Sciences, Xi' an 710600 (China)

2015-10-02

We consider a two-component Bose–Einstein condensate under extreme elongation in a harmonic plus quartic trap. The ground-state and rotational properties of such a system are numerically studied as a function of intra- and inter-component contact interactions, and of the rotational frequency. For the nonrotational case, we obtain the exact phase diagram showing the ground-state density distributions as contact-interactions varied. For both slowly and ultrarapidly rotational cases, we demonstrate that the vortex configurations depend strongly on the relative strength of the contact interactions, as well as on the rotational frequency. The controllable system may be used to investigate the interplay of interaction and rotation, and to explore more exotic quantum phases. - Highlights: • Quartic trap extends the parameter space to a fast rotating region. • Different ground state density distributions and novel vortex structures are obtained within the full parameter space. • Effects of the contact interactions and rotation are discussed in detail.

Ground-state and rotational properties of a two-component Bose–Einstein condensate in a harmonic plus quartic trap

International Nuclear Information System (INIS)

Chen, Guang-Ping; Zhang, Zhi-Yuan; Dong, Biao; Wang, Lin-Xue; Zhang, Xiao-Fei; Zhang, Shou-Gang

2015-01-01

We consider a two-component Bose–Einstein condensate under extreme elongation in a harmonic plus quartic trap. The ground-state and rotational properties of such a system are numerically studied as a function of intra- and inter-component contact interactions, and of the rotational frequency. For the nonrotational case, we obtain the exact phase diagram showing the ground-state density distributions as contact-interactions varied. For both slowly and ultrarapidly rotational cases, we demonstrate that the vortex configurations depend strongly on the relative strength of the contact interactions, as well as on the rotational frequency. The controllable system may be used to investigate the interplay of interaction and rotation, and to explore more exotic quantum phases. - Highlights: • Quartic trap extends the parameter space to a fast rotating region. • Different ground state density distributions and novel vortex structures are obtained within the full parameter space. • Effects of the contact interactions and rotation are discussed in detail

Coherent states and rational surfaces

International Nuclear Information System (INIS)

Brody, Dorje C; Graefe, Eva-Maria

2010-01-01

The state spaces of generalized coherent states associated with special unitary groups are shown to form rational curves and surfaces in the space of pure states. These curves and surfaces are generated by the various Veronese embeddings of the underlying state space into higher dimensional state spaces. This construction is applied to the parameterization of generalized coherent states, which is useful for practical calculations, and provides an elementary combinatorial approach to the geometry of the coherent state space. The results are extended to Hilbert spaces with indefinite inner products, leading to the introduction of a new kind of generalized coherent states.

Antimatter Plasmas in a Multipole Trap for Antihydrogen

CERN Document Server

Andresen, G B; Boston, A; Bowe, P D; Cesar, C L; Chapman, S; Charlton, M; Chartier, M; Deutsch, A; Fajans, J; Fujiwara, M C; Funakoshi, R; Gill, D R; Gomberoff, K; Hangst, J S; Hayano, R S; Hydomako, R; Jenkins, M J; Jørgensen, L V; Kurchaninov, L; Madsen, N; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Robicheaux, F; Sarid, E; Silveira, D M; Storey, J W; Telle, H H; Thompson, R I; van der Werf, D P; Wurtele, J S; Yamazaki, Y

2007-01-01

We have demonstrated storage of plasmas of the charged constituents of the antihydrogen atom, antiprotons and positrons, in a Penning trap surrounded by a minimum-B magnetic trap designed for holding neutral antiatoms. The neutral trap comprises a superconducting octupole and two superconducting, solenoidal mirror coils. We have measured the storage lifetimes of antiproton and positron plasmas in the combined Penning-neutral trap, and compared these to lifetimes without the neutral trap fields. The magnetic well depth was 0.6 T, deep enough to trap ground state antihydrogen atoms of up to about 0.4 K in temperature. We have demonstrated that both particle species can be stored for times long enough to permit antihydrogen production and trapping studies.

Antimatter plasmas in a multipole trap for antihydrogen.

Science.gov (United States)

Andresen, G; Bertsche, W; Boston, A; Bowe, P D; Cesar, C L; Chapman, S; Charlton, M; Chartier, M; Deutsch, A; Fajans, J; Fujiwara, M C; Funakoshi, R; Gill, D R; Gomberoff, K; Hangst, J S; Hayano, R S; Hydomako, R; Jenkins, M J; Jørgensen, L V; Kurchaninov, L; Madsen, N; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Robicheaux, F; Sarid, E; Silveira, D M; Storey, J W; Telle, H H; Thompson, R I; van der Werf, D P; Wurtele, J S; Yamazaki, Y

2007-01-12

We have demonstrated storage of plasmas of the charged constituents of the antihydrogen atom, antiprotons and positrons, in a Penning trap surrounded by a minimum-B magnetic trap designed for holding neutral antiatoms. The neutral trap comprises a superconducting octupole and two superconducting, solenoidal mirror coils. We have measured the storage lifetimes of antiproton and positron plasmas in the combined Penning-neutral trap, and compared these to lifetimes without the neutral trap fields. The magnetic well depth was 0.6 T, deep enough to trap ground state antihydrogen atoms of up to about 0.4 K in temperature. We have demonstrated that both particle species can be stored for times long enough to permit antihydrogen production and trapping studies.

Graphene-edge dielectrophoretic tweezers for trapping of biomolecules.

Science.gov (United States)

Barik, Avijit; Zhang, Yao; Grassi, Roberto; Nadappuram, Binoy Paulose; Edel, Joshua B; Low, Tony; Koester, Steven J; Oh, Sang-Hyun

2017-11-30

The many unique properties of graphene, such as the tunable optical, electrical, and plasmonic response make it ideally suited for applications such as biosensing. As with other surface-based biosensors, however, the performance is limited by the diffusive transport of target molecules to the surface. Here we show that atomically sharp edges of monolayer graphene can generate singular electrical field gradients for trapping biomolecules via dielectrophoresis. Graphene-edge dielectrophoresis pushes the physical limit of gradient-force-based trapping by creating atomically sharp tweezers. We have fabricated locally backgated devices with an 8-nm-thick HfO 2 dielectric layer and chemical-vapor-deposited graphene to generate 10× higher gradient forces as compared to metal electrodes. We further demonstrate near-100% position-controlled particle trapping at voltages as low as 0.45 V with nanodiamonds, nanobeads, and DNA from bulk solution within seconds. This trapping scheme can be seamlessly integrated with sensors utilizing graphene as well as other two-dimensional materials.

Deep energetic trap states in organic photovoltaic devices

KAUST Repository

Shuttle, Christopher G.; Treat, Neil D.; Douglas, Jessica D.; Frechet, Jean; Chabinyc, Michael L.

2011-01-01

The nature of energetic disorder in organic semiconductors is poorly understood. In photovoltaics, energetic disorder leads to reductions in the open circuit voltage and contributes to other loss processes. In this work, three independent optoelectronic methods were used to determine the long-lived carrier populations in a high efficiency N-alkylthieno[3,4-c]pyrrole-4,6-dione (TPD) based polymer: fullerene solar cell. In the TPD co-polymer, all methods indicate the presence of a long-lived carrier population of ∼ 10 15 cm -3 on timescales ≤100 μs. Additionally, the behavior of these photovoltaic devices under optical bias is consistent with deep energetic lying trap states. Comparative measurements were also performed on high efficiency poly-3-hexylthiophene (P3HT): fullerene solar cells; however a similar long-lived carrier population was not observed. This observation is consistent with a higher acceptor concentration (doping) in P3HT than in the TPD-based copolymer. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Deep energetic trap states in organic photovoltaic devices

KAUST Repository

Shuttle, Christopher G.

2011-11-23

The nature of energetic disorder in organic semiconductors is poorly understood. In photovoltaics, energetic disorder leads to reductions in the open circuit voltage and contributes to other loss processes. In this work, three independent optoelectronic methods were used to determine the long-lived carrier populations in a high efficiency N-alkylthieno[3,4-c]pyrrole-4,6-dione (TPD) based polymer: fullerene solar cell. In the TPD co-polymer, all methods indicate the presence of a long-lived carrier population of ∼ 10 15 cm -3 on timescales ≤100 μs. Additionally, the behavior of these photovoltaic devices under optical bias is consistent with deep energetic lying trap states. Comparative measurements were also performed on high efficiency poly-3-hexylthiophene (P3HT): fullerene solar cells; however a similar long-lived carrier population was not observed. This observation is consistent with a higher acceptor concentration (doping) in P3HT than in the TPD-based copolymer. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Schemes for loading a Bose-Einstein condensate into a two-dimensional dipole trap

International Nuclear Information System (INIS)

Colombe, Yves; Kadio, Demascoth; Olshanii, Maxim; Mercier, Brigitte; Lorent, Vincent; Perrin, Helene

2003-01-01

We propose two loading mechanisms of a degenerate Bose gas into a surface trap. This trap relies on the dipole potential produced by two evanescent optical waves far detuned from the atomic resonance, yielding a strongly anisotropic trap with typical frequencies 40 Hz x 65 Hz x 30 kHz. We present numerical simulations based on the time-dependent Gross-Pitaevskii equation of the transfer process from a conventional magnetic trap into the surface trap. We show that, despite a large discrepancy between the oscillation frequencies along one direction in the initial and final traps, a loading time of a few tens of milliseconds would lead to an adiabatic transfer. Preliminary experimental results are presented

Trapping of hydride forming elements within miniature electrothermal devices. Part 2. Investigation of collection of arsenic and selenium hydrides on a surface and in a cavity of a graphite rod

International Nuclear Information System (INIS)

Docekal, Bohumil

2004-01-01

The interaction of arsenic and selenium hydrides with bare and modified graphite was investigated by atomic absorption spectrometry and by radiotracer technique using 75 Se radionuclide in a laboratory made brass cylindrical chamber equipped with a vertical quartz tube torch for supporting miniature hydrogen diffusion flame atomizer. Strong interaction was observed at elevated temperatures above 800 deg. C. In contrast to the very often-reported data for conventional graphite tube atomizers, this high temperature interaction was also accompanied by a pronounced trapping of analytes at elevated temperatures close to 1100-1200 deg. C when modified graphite was used. Comparing modifiers tested (Ir, Pt and Rh), iridium appeared the only useful permanent modifier. Among various graphite-rod traps designed, the most efficient trapping of analytes was achieved in a graphite cavity. The net selenium trapping efficiencies of approximately 53% and 70% were found by radiotracer technique for the iridium-treated graphite surface and the iridium-treated graphite cavity, respectively. In contrast to the molybdenum surface, bare graphite did not exhibit any significant trapping effect. Trapping isotherms obtained at different temperatures displayed non-linear course in the range up to the upper limit of the analytical relevance of 100 ng of an analyte, indicating a limited trapping capacity of the modified graphite surface and the same trapping mechanism at low and elevated temperatures applied (300-1300 deg. C). Radiography experiments with 75 Se radiotracer showed that a major part of selenium was collected within the small cavity of the graphite rod and that selenium was also deposited after the trapping and vaporization steps in the trap chamber and on the quartz tube wall of the burner. Complementary experiments performed with the conventional transversally heated graphite tube and with bare and thermally shielded injection capillaries for hydride introduction, showed that

Ground-state properties of trapped Bose-Fermi mixtures: Role of exchange correlation

International Nuclear Information System (INIS)

Albus, Alexander P.; Wilkens, Martin; Illuminati, Fabrizio

2003-01-01

We introduce density-functional theory for inhomogeneous Bose-Fermi mixtures, derive the associated Kohn-Sham equations, and determine the exchange-correlation energy in local-density approximation. We solve numerically the Kohn-Sham system, and determine the boson and fermion density distributions and the ground-state energy of a trapped, dilute mixture beyond mean-field approximation. The importance of the corrections due to exchange correlation is discussed by a comparison with current experiments; in particular, we investigate the effect of the repulsive potential-energy contribution due to exchange correlation on the stability of the mixture against collapse

MIGRATION TRAPS IN DISKS AROUND SUPERMASSIVE BLACK HOLES

Energy Technology Data Exchange (ETDEWEB)

Bellovary, Jillian M.; Low, Mordecai-Mark Mac; McKernan, Barry; Ford, K. E. Saavik [Department of Astrophysics, American Museum of Natural History, Central Park West at 79th Street, NY 10024 (United States)

2016-03-10

Accretion disks around supermassive black holes (SMBHs) in active galactic nuclei (AGNs) contain stars, stellar mass black holes, and other stellar remnants, which perturb the disk gas gravitationally. The resulting density perturbations exert torques on the embedded masses causing them to migrate through the disk in a manner analogous to planets in protoplanetary disks. We determine the strength and direction of these torques using an empirical analytic description dependent on local disk gradients, applied to two different analytic, steady-state disk models of SMBH accretion disks. We find that there are radii in such disks where the gas torque changes sign, trapping migrating objects. Our analysis shows that major migration traps generally occur where the disk surface density gradient changes sign from positive to negative, around 20–300R{sub g}, where R{sub g} = 2GM/c{sup 2} is the Schwarzschild radius. At these traps, massive objects in the AGN disk can accumulate, collide, scatter, and accrete. Intermediate mass black hole formation is likely in these disk locations, which may lead to preferential gap and cavity creation at these radii. Our model thus has significant implications for SMBH growth as well as gravitational wave source populations.

Sympathetic Wigner-function tomography of a dark trapped ion

DEFF Research Database (Denmark)

Mirkhalaf, Safoura; Mølmer, Klaus

2012-01-01

A protocol is provided to reconstruct the Wigner function for the motional state of a trapped ion via fluorescence detection on another ion in the same trap. This “sympathetic tomography” of a dark ion without optical transitions suitable for state measurements is based on the mapping of its...

Formation of Pentacene wetting layer on the SiO2 surface and charge trap in the wetting layer

International Nuclear Information System (INIS)

Kim, Chaeho; Jeon, D.

2008-01-01

We studied the early-stage growth of vacuum-evaporated pentacene film on a native SiO 2 surface using atomic force microscopy and in-situ spectroscopic ellipsometry. Pentacene deposition prompted an immediate change in the ellipsometry spectra, but atomic force microscopy images of the early stage films did not show a pentacene-related morphology other than the decrease in the surface roughness. This suggested that a thin pentacene wetting layer was formed by pentacene molecules lying on the surface before the crystalline islands nucleated. Growth simulation based on the in situ spectroscopic ellipsometry spectra supported this conclusion. Scanning capacitance microscopy measurement indicated the existence of trapped charges in the SiO 2 and pentacene wetting layer

Antihydrogen Formation, Dynamics and Trapping

CERN Document Server

Butler, Eoin; Charlton, Michael

2011-01-01

Antihydrogen, the simplest pure-antimatter atomic system, holds the promise of direct tests of matter-antimatter equivalence and CPT invariance, two of the outstanding unanswered questions in modern physics. Antihydrogen is now routinely produced in charged-particle traps through the combination of plasmas of antiprotons and positrons, but the atoms escape and are destroyed in a minuscule fraction of a second. The focus of this work is the production of a sample of cold antihydrogen atoms in a magnetic atom trap. This poses an extreme challenge, because the state-of-the-art atom traps are only approximately 0.5 K deep for ground-state antihydrogen atoms, much shallower than the energies of particles stored in the plasmas. This thesis will outline the main parts of the ALPHA experiment, with an overview of the important physical processes at work. Antihydrogen production techniques will be described, and an analysis of the spatial annihilation distribution to give indications of the temperature and binding ene...

Surface-bound states in nanodiamonds

Science.gov (United States)

Han, Peng; Antonov, Denis; Wrachtrup, Jörg; Bester, Gabriel

2017-05-01

We show via ab initio calculations and an electrostatic model that the notoriously low, but positive, electron affinity of bulk diamond becomes negative for hydrogen passivated nanodiamonds and argue that this peculiar situation (type-II offset with a vacuum level at nearly midgap) and the three further conditions: (i) a surface dipole with positive charge on the outside layer, (ii) a spherical symmetry, and (iii) a dielectric mismatch at the surface, results in the emergence of a peculiar type of surface state localized just outside the nanodiamond. These states are referred to as "surface-bound states" and have consequently a strong environmental sensitivity. These type of states should exist in any nanostructure with negative electron affinity. We further quantify the band offsets of different type of nanostructures as well as the exciton binding energy and contrast the results with results for "conventional" silicon quantum dots.

A quasi-electrostatic trap for neutral atoms

International Nuclear Information System (INIS)

Engler, H.

2000-01-01

This thesis reports on the realization of a ''quasi-electrostatic trap'' (QUEST) for neutral atoms. Cesium ( 133 Cs) and Lithium ( 7 Li) atoms are stored, which represents for the first time a mixture of different species in an optical dipole trap. The trap is formed by the focused Gaussian beam of a 30 W cw CO 2 -laser. For a beam waist of 108 μm the resulting trap depth is κ B x 118 μK for Cesium and κ B x 48 μK for Lithium. We transfer up to 2 x 10 6 Cesium and 10 5 Lithium atoms from a magneto-optical trap into the QUEST. When simultaneously transferred, the atom number currently is reduced by roughly a factor of 10. Since photon scattering from the trapping light can be neglected, the QUEST represents an almost perfect conservative trapping potential. Atoms in the QUEST populate the electronic ground state sublevels. Arbitrary sublevels can be addressed via optical pumping. Due to the very low background gas pressure of 2 x 10 -11 mbar storage times of several minutes are realized. Evaporative cooling of Cesium is observed. In addition, laser cooling is applied to the trapped Cesium sample, which reduces the temperature from 25 μK to a value below 7 μK. If prepared in the upper hyper-fine ground state sublevel, spin changing collisions are observed not only within one single species, but also between the two different species. The corresponding relaxation rates are quantitatively analyzed. (orig.)

Scattering Theory on Surface Majorana Fermions by an Impurity in ^{3}He-B.

Science.gov (United States)

Tsutsumi, Yasumasa

2017-04-07

We have formulated the scattering theory on Majorana fermions emerging in the surface bound state of the superfluid ^{3}He B phase (^{3}He-B) by an impurity. By applying the theory to the electron bubble, which is regarded as the impurity, trapped below a free surface of ^{3}He-B, the observed mobility of the electron bubble [J. Phys. Soc. Jpn. 82, 124607 (2013)JUPSAU0031-901510.7566/JPSJ.82.124607] is quantitatively reproduced. The mobility is suppressed in low temperatures from the expected value in the bulk ^{3}He-B by the contribution from the surface Majorana fermions. By contrast, the mobility does not depend on the trapped depth of the electron bubble in spite of the spatial variation of the wave function of the surface Majorana fermions. Our formulated theory demonstrates the depth-independent mobility by considering intermediate states in the scattering process. Therefore, we conclude that the experiment has succeeded in observing Majorana fermions in the surface bound state.

Scheme for generating the singlet state of three atoms trapped in distant cavities coupled by optical fibers

Energy Technology Data Exchange (ETDEWEB)

Wang, Dong-Yang [Department of Physics, College of Science, Yanbian University, Yanji, Jilin 133002 (China); Wen, Jing-Ji [College of Foundation Science, Harbin University of Commerce, Harbin, Heilongjiang 150028 (China); Bai, Cheng-Hua; Hu, Shi; Cui, Wen-Xue [Department of Physics, College of Science, Yanbian University, Yanji, Jilin 133002 (China); Wang, Hong-Fu, E-mail: hfwang@ybu.edu.cn [Department of Physics, College of Science, Yanbian University, Yanji, Jilin 133002 (China); Zhu, Ai-Dong [Department of Physics, College of Science, Yanbian University, Yanji, Jilin 133002 (China); Zhang, Shou, E-mail: szhang@ybu.edu.cn [Department of Physics, College of Science, Yanbian University, Yanji, Jilin 133002 (China)

2015-09-15

An effective scheme is proposed to generate the singlet state with three four-level atoms trapped in three distant cavities connected with each other by three optical fibers, respectively. After a series of appropriate atom–cavity interactions, which can be arbitrarily controlled via the selective pairing of Raman transitions and corresponding optical switches, a three-atom singlet state can be successfully generated. The influence of atomic spontaneous decay, photon leakage of cavities and optical fibers on the fidelity of the state is numerically simulated showing that the three-atom singlet state can be generated with high fidelity by choosing the experimental parameters appropriately.

ATRAP on the way to trapped Antihydrogen

CERN Document Server

Grzonka, D; Gabrielse, G; Goldenbaum, F; Hänsch, T W; Hessels, E A; Larochelle, P; Le Sage, D; Levitt, B; Oelert, W; Pittner, H; Sefzick, T; Speck, A; Storry, C H; Walz, J; Zhang, Z

2005-01-01

The ATRAP experiment at the CERN antiproton decelerator AD aims for a test of the CPT invariance by a high precision comparison of the 1s‐2s transition in the hydrogen and the antihydrogen atom. Antihydrogen production is routinely operated at ATRAP and detailed studies have been performed in order to optimize the production efficiency of useful antihydrogen. The shape parameters of the antiproton and positron clouds, the n‐state distribution of the produced Rydberg antihydrogen atoms and the antihydrogen velocity have been studied. Furthermore an alternative method of laser controlled antihydrogen production was successfully applied. For high precision measurements of atomic transitions cold antihydrogen in the ground state is required which must be trapped due to the low number of available antihydrogen atoms compared to the cold hydrogen beam used for hydrogen spectroscopy. To ensure a reasonable antihydrogen trapping efficiency a magnetic trap has to be superposed the nested Penning trap. First trappi...

A metastable helium trap for atomic collision physics

International Nuclear Information System (INIS)

Colla, M.; Gulley, R.; Uhlmann, L.; Hoogerland, M.D.; Baldwin, K.G.H.; Buckman, S.J.

1999-01-01

Full text: Metastable helium in the 2 3 S state is an important species for atom optics and atomic collision physics. Because of its large internal energy (20eV), long lifetime (∼8000s) and large collision cross section for a range of processes, metastable helium plays an important role in atmospheric physics, plasma discharges and gas laser physics. We have embarked on a program of studies on atom-atom and electron-atom collision processes involving cold metastable helium. We confine metastable helium atoms in a magneto-optic trap (MOT), which is loaded by a transversely collimated, slowed and 2-D focussed atomic beam. We employ diode laser tuned to the 1083 nm (2 3 S 1 - 2 3 P2 1 ) transition to generate laser cooling forces in both the loading beam and the trap. Approximately 10 million helium atoms are trapped at temperatures of ∼ 1mK. We use phase modulation spectroscopy to measure the trapped atomic density. The cold, trapped atoms can collide to produce either atomic He + or molecular He 2 + ions by Penning Ionisation (PI) or Associative Ionisation (AI). The rate of formation of these ions is dependant upon the detuning of the trapping laser from resonance. A further laser can be used to connect the 2 3 S 1 state to another higher lying excited state, and variation of the probe laser detuning used to measure interatomic collision potential. Electron-atom collision processes are studied using a monochromatic electron beam with a well defined spatial current distribution. The total trap loss due to electron collisions is measured as a function of electron energy. Results will be presented for these atomic collision physics measurements involving cold, trapped metastable helium atoms. Copyright (1999) Australian Optical Society

Spectroscopy of a Synthetic Trapped Ion Qubit

Science.gov (United States)

Hucul, David; Christensen, Justin E.; Hudson, Eric R.; Campbell, Wesley C.

2017-09-01

133Ba+ has been identified as an attractive ion for quantum information processing due to the unique combination of its spin-1 /2 nucleus and visible wavelength electronic transitions. Using a microgram source of radioactive material, we trap and laser cool the synthetic A =133 radioisotope of barium II in a radio-frequency ion trap. Using the same, single trapped atom, we measure the isotope shifts and hyperfine structure of the 62P1 /2↔62S1 /2 and 62P1 /2↔52D3 /2 electronic transitions that are needed for laser cooling, state preparation, and state detection of the clock-state hyperfine and optical qubits. We also report the 62P1 /2↔52D3 /2 electronic transition isotope shift for the rare A =130 and 132 barium nuclides, completing the spectroscopic characterization necessary for laser cooling all long-lived barium II isotopes.

Technologies for Trapped-Ion Quantum Information Systems

Science.gov (United States)

2016-03-21

we discuss work aiming to leverage a commer- cial CMOS (complementary metal-oxide- semiconductor ) process to develop an integrated ion trap architecture...this integration: alignment of optical elements with tiny modes to point emitters, and trap- ping charged particles close to dielectric surfaces. Inte...far by heating in several ways. The deep optical potentials required to confine a charged particle against stray fields impart significant recoil

Sticky traps saturate with navel orangeworm in a non-linear fashion

Science.gov (United States)

In order to evaluate saturation thresholds as well as differences among wing-trap types, we used unmated female navel orangeworm (NOW) as sex pheromone baits in wing-traps that varied by color and glue/trapping surface. These results were compared to male capture in red delta and simple water cup tr...

Lead determination at ng/mL level by flame atomic absorption spectrometry using a tantalum coated slotted quartz tube atom trap.

Science.gov (United States)

Demirtaş, İlknur; Bakırdere, Sezgin; Ataman, O Yavuz

2015-06-01

Flame atomic absorption spectrometry (FAAS) still keeps its importance despite the relatively low sensitivity; because it is a simple and economical technique for determination of metals. In recent years, atom traps have been developed to increase the sensitivity of FAAS. Although the detection limit of FAAS is only at the level of µg/mL, with the use of atom traps it can reach to ng/mL. Slotted quartz tube (SQT) is one of the atom traps used to improve sensitivity. In atom trapping mode of SQT, analyte is trapped on-line in SQT for few minutes using ordinary sample aspiration, followed by the introduction of a small volume of organic solvent to effect the revolatilization and atomization of analyte species resulting in a transient signal. This system is economical, commercially available and easy to use. In this study, a sensitive analytical method was developed for the determination of lead with the help of SQT atom trapping flame atomization (SQT-AT-FAAS). 574 Fold sensitivity enhancement was obtained at a sample suction rate of 3.9 mL/min for 5.0 min trapping period with respect to FAAS. Organic solvent was selected as 40 µL of methyl isobutyl ketone (MIBK). To obtain a further sensitivity enhancement inner surface of SQT was coated with several transition metals. The best sensitivity enhancement, 1650 fold enhancement, was obtained by the Ta-coated SQT-AT-FAAS. In addition, chemical nature of Pb species trapped on quartz and Ta surface, and the chemical nature of Ta on quartz surface were investigated by X-ray photoelectron spectroscopy (XPS) and Raman Spectroscopy. Raman spectrometric results indicate that tantalum is coated on SQT surface in the form of Ta2O5. XPS studies revealed that the oxidation state of Pb in species trapped on both bare and Ta coated SQT surfaces is +2. For the accuracy check, the analyses of standard reference material were performed by use of SCP SCIENCE EnviroMAT Low (EU-L-2) and results for Pb were to be in good agreement with

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

Science.gov (United States)

Anand, M. J.; Ng, G. I.; Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C.; Syamal, B.; Zhou, X.

2015-02-01

The influence of electric field (EF) on the dynamic ON-resistance (dyn-RDS[ON]) and threshold-voltage shift (ΔVth) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (IDS-VDS) and drain current (ID) transients. Different EF was realized with devices of different gate-drain spacing (Lgd) under the same OFF-state stress. Under high-EF (Lgd = 2 μm), the devices exhibited higher dyn-RDS[ON] degradation but a small ΔVth (˜120 mV). However, at low-EF (Lgd = 5 μm), smaller dyn-RDS[ON] degradation but a larger ΔVth (˜380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-RDS[ON] degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔVth. A trap with activation energy 0.33 eV was identified in the AlGaN barrier by ID-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations.

Trapping Dynamics in Photosystem I-Light Harvesting Complex I of Higher Plants Is Governed by the Competition Between Excited State Diffusion from Low Energy States and Photochemical Charge Separation.

Science.gov (United States)

Molotokaite, Egle; Remelli, William; Casazza, Anna Paola; Zucchelli, Giuseppe; Polli, Dario; Cerullo, Giulio; Santabarbara, Stefano

2017-10-26

The dynamics of excited state equilibration and primary photochemical trapping have been investigated in the photosystem I-light harvesting complex I isolated from spinach, by the complementary time-resolved fluorescence and transient absorption approaches. The combined analysis of the experimental data indicates that the excited state decay is described by lifetimes in the ranges of 12-16 ps, 32-36 ps, and 64-77 ps, for both detection methods, whereas faster components, having lifetimes of 550-780 fs and 4.2-5.2 ps, are resolved only by transient absorption. A unified model capable of describing both the fluorescence and the absorption dynamics has been developed. From this model it appears that the majority of excited state equilibration between the bulk of the antenna pigments and the reaction center occurs in less than 2 ps, that the primary charge separated state is populated in ∼4 ps, and that the charge stabilization by electron transfer is completed in ∼70 ps. Energy equilibration dynamics associated with the long wavelength absorbing/emitting forms harbored by the PSI external antenna are also characterized by a time mean lifetime of ∼75 ps, thus overlapping with radical pair charge stabilization reactions. Even in the presence of a kinetic bottleneck for energy equilibration, the excited state dynamics are shown to be principally trap-limited. However, direct excitation of the low energy chlorophyll forms is predicted to lengthen significantly (∼2-folds) the average trapping time.

Modeling of radiation-induced charge trapping in MOS devices under ionizing irradiation

Energy Technology Data Exchange (ETDEWEB)

Petukhov, M. A., E-mail: m.a.petukhov@gmail.com; Ryazanov, A. I. [National Research Center Kurchatov Institute (Russian Federation)

2016-12-15

The numerical model of the radiation-induced charge trapping process in the oxide layer of a MOS device under ionizing irradiation is developed; the model includes carrier transport, hole capture by traps in different states, recombination of free electrons and trapped holes, kinetics of hydrogen ions which can be accumulated in the material during transistor manufacture, and accumulation and charging of interface states. Modeling of n-channel MOSFET behavior under 1 MeV photon irradiation is performed. The obtained dose dependences of the threshold voltage shift and its contributions from trapped holes and interface states are in good agreement with experimental data.

Cell wall trapping of autocrine peptides for human G-protein-coupled receptors on the yeast cell surface.

Directory of Open Access Journals (Sweden)

Jun Ishii

Full Text Available G-protein-coupled receptors (GPCRs regulate a wide variety of physiological processes and are important pharmaceutical targets for drug discovery. Here, we describe a unique concept based on yeast cell-surface display technology to selectively track eligible peptides with agonistic activity for human GPCRs (Cell Wall Trapping of Autocrine Peptides (CWTrAP strategy. In our strategy, individual recombinant yeast cells are able to report autocrine-positive activity for human GPCRs by expressing a candidate peptide fused to an anchoring motif. Following expression and activation, yeast cells trap autocrine peptides onto their cell walls. Because captured peptides are incapable of diffusion, they have no impact on surrounding yeast cells that express the target human GPCR and non-signaling peptides. Therefore, individual yeast cells can assemble the autonomous signaling complex and allow single-cell screening of a yeast population. Our strategy may be applied to identify eligible peptides with agonistic activity for target human GPCRs.

Investigations of the ground-state hyperfine atomic structure and beta decay measurement prospects of 21Na with improved laser trapping techniques

International Nuclear Information System (INIS)

Rowe, Mary A.

1999-01-01

This thesis describes an experiment in which a neutral atom laser trap loaded with radioactive 21 Na was improved and then used for measurements. The sodium isotope (half-life=22 sec) is produced on line at the 88in cyclotron at Lawrence Berkeley National Laboratory. The author developed an effective magnesium oxide target system which is crucial to deliver a substantive beam of 21 Na to the experiment. Efficient manipulation of the 21 Na beam with lasers allowed 30,000 atoms to be contained in a magneto-optical trap. Using the cold trapped atoms, the author measured to high precision the hyperfine splitting of the atomic ground state of 21 Na. She measured the 3S 1/2 (F=1,m=0)-3S 1/2 (F=2,m=0) atomic level splitting of 21 Na to be 1,906,471,870±200 Hz. Additionally, she achieved initial detection of beta decay from the trap and evaluated the prospects of precision beta decay correlation studies with trapped atoms

Implementation schemes for unsharp measurements with trapped ions

CSIR Research Space (South Africa)

Choudhary, SK

2013-01-01

Full Text Available trapped ion. The schemes rely on introducing weak entanglement between the state of a target ion and that of an auxiliary ion, using standard ion-trap quantum logic operations, and then realizing an unsharp measurement through projective measurement...

A circularly polarized optical dipole trap and other developments in laser trapping of atoms

Science.gov (United States)

Corwin, Kristan Lee

Several innovations in laser trapping and cooling of alkali atoms are described. These topics share a common motivation to develop techniques for efficiently manipulating cold atoms. Such advances facilitate sensitive precision measurements such as parity non- conservation and 8-decay asymmetry in large trapped samples, even when only small quantities of the desired species are available. First, a cold, bright beam of Rb atoms is extracted from a magneto-optical trap (MOT) using a very simple technique. This beam has a flux of 5 × 109 atoms/s and a velocity of 14 m/s, and up to 70% of the atoms in the MOT were transferred to the atomic beam. Next, a highly efficient MOT for radioactive atoms is described, in which more than 50% of 221Fr atoms contained in a vapor cell are loaded into a MOT. Measurements were also made of the 221Fr 7 2P1/2 and 7 2P3/2 energies and hyperfine constants. To perform these experiments, two schemes for stabilizing the frequency of the light from a diode laser were developed and are described in detail. Finally, a new type of trap is described and a powerful cooling technique is demonstrated. The circularly polarized optical dipole trap provides large samples of highly spin-polarized atoms, suitable for many applications. Physical processes that govern the transfer of large numbers of atoms into the trap are described, and spin-polarization is measured to be 98(1)%. In addition, the trap breaks the degeneracy of the atomic spin states much like a magnetic trap does. This allows for RF and microwave cooling via both forced evaporation and a Sisyphus mechanism. Preliminary application of these techniques to the atoms in the circularly polarized dipole trap has successfully decreased the temperature by a factor of 4 while simultaneously increasing phase space density.

Science, conservation, and camera traps

Science.gov (United States)

Nichols, James D.; Karanth, K. Ullas; O'Connel, Allan F.; O'Connell, Allan F.; Nichols, James D.; Karanth, K. Ullas

2011-01-01

Biologists commonly perceive camera traps as a new tool that enables them to enter the hitherto secret world of wild animals. Camera traps are being used in a wide range of studies dealing with animal ecology, behavior, and conservation. Our intention in this volume is not to simply present the various uses of camera traps, but to focus on their use in the conduct of science and conservation. In this chapter, we provide an overview of these two broad classes of endeavor and sketch the manner in which camera traps are likely to be able to contribute to them. Our main point here is that neither photographs of individual animals, nor detection history data, nor parameter estimates generated from detection histories are the ultimate objective of a camera trap study directed at either science or management. Instead, the ultimate objectives are best viewed as either gaining an understanding of how ecological systems work (science) or trying to make wise decisions that move systems from less desirable to more desirable states (conservation, management). Therefore, we briefly describe here basic approaches to science and management, emphasizing the role of field data and associated analyses in these processes. We provide examples of ways in which camera trap data can inform science and management.

Magnetic Trapping and Coherent Control of Laser-Cooled Molecules

Science.gov (United States)

Williams, H. J.; Caldwell, L.; Fitch, N. J.; Truppe, S.; Rodewald, J.; Hinds, E. A.; Sauer, B. E.; Tarbutt, M. R.

2018-04-01

We demonstrate coherent microwave control of the rotational, hyperfine, and Zeeman states of ultracold CaF molecules, and the magnetic trapping of these molecules in a single, selectable quantum state. We trap about 5 ×103 molecules for almost 2 s at a temperature of 70 (8 ) μ K and a density of 1.2 ×105 cm-3. We measure the state-specific loss rate due to collisions with background helium.

Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by frequency dependent conductance measurement

International Nuclear Information System (INIS)

Chakraborty, Apurba; Biswas, Dhrubes

2015-01-01

Frequency dependent conductance measurement is carried out to observe the trapping effect in AlGaN/InGaN/GaN double heterostructure and compared that with conventional AlGaN/GaN single heterostructure. It is found that the AlGaN/InGaN/GaN diode structure does not show any trapping effect, whereas single heterostructure AlGaN/GaN diode suffers from two kinds of trap energy states in near depletion to higher negative voltage bias region. This conductance behaviour of AlGaN/InGaN/GaN heterostructure is owing to more Fermi energy level shift from trap energy states at AlGaN/InGaN junction compare to single AlGaN/GaN heterostructure and eliminates the trapping effects. Analysis yielded interface trap energy state in AlGaN/GaN is to be with time constant of (33.8–76.5) μs and trap density of (2.38–0.656) × 10 12  eV −1  cm −2 in −3.2 to −4.8 V bias region, whereas for AlGaN/InGaN/GaN structure no interface energy states are found and the extracted surface trap energy concentrations and time constants are (5.87–4.39) ×10 10  eV −1  cm −2 and (17.8–11.3) μs, respectively, in bias range of −0.8–0.0 V

Precision mass measurements at THe-trap and the FSU trap

Energy Technology Data Exchange (ETDEWEB)

Hoecker, Martin Juergen

2016-07-26

THe-Trap is a Penning-trap mass spectrometer at the Max-Planck-Institute for Nuclear Physics in Heidelberg, Germany, that aims to measure the T/{sup 3}He mass ratio with a relative uncertainty of 10{sup -11}. Improvements of the measurement technique, in particular the measurement of systematic shifts, enabled measurements of mass ratios with relative uncertainties of 7.10{sup -11}, as demonstrated by a cyclotron frequency ratio determination on {sup 12}C{sup 4+}/{sup 16}O{sup 5+}. This uncertainty was limited by the lineshape. An improved theoretical model based on a rotating wave approximation can be used to describe dynamical interactions between the detection system and the ion, in order to better understand the lineshape and to further reduce the uncertainty. The Florida State University trap is a Penning-trap mass spectrometer located in Tallahassee, Florida (USA). In the context of this thesis, three mass ratios were measured, and further 20 mass ratio measurements analyzed, which resulted in the publication of the masses of {sup 82,83}Kr, {sup 131,134}Xe, {sup 86-88}Sr, and {sup 170-174,176}Yb with relative uncertainties between (0.9 - 1.3).10{sup -10}. These masses serve as reference masses for other experiments and have applications in the determination of the fine-structure constant alpha via the photon-recoil method.

Surface states in crystals with low-index surfaces

International Nuclear Information System (INIS)

Wang Hui-Ping; Tao Rui-Bao

2015-01-01

For most of the conventional crystals with low-index surfaces, the hopping between the nearest neighbor (1NN) crystal planes (CPs) is dominant and the ones from the nNN (2 ≤ n < ∞) CPs are relatively weak, considered as small perturbations. The recent theoretical analysis [1] has demonstrated the absence of surface states at the level of the hopping approximation between the 1NN CPs when the original infinite crystal has the geometric reflection symmetry (GRS) for each CP. Meanwhile, based on the perturbation theory, it has also been shown that small perturbations from the hopping between the nNN (2 ≤ n < ∞) CPs and surface relaxation have no impact on the above conclusion. However, for the crystals with strong intrinsic spin-orbit coupling (SOC), the dominant terms of intrinsic SOC associate with two 1NN bond hoppings. Thus SOC will significantly contribute the hoppings from the 1NN and/or 2NN CPs except the ones within each CP. Here, we will study the effect of the hopping between the 2NN CPs on the surface states in model crystals with three different type structures (Type I: “···–P–P–P–P–···”, Type II: “···–P–Q–P–Q–···” and Type III: “···–P=Q–P=Q–···” where P and Q indicate CPs and the signs “−” and “=” mark the distance between the 1NN CPs). In terms of analytical and numerical calculations, we study the behavior of surface states in three types after the symmetric/asymmetric hopping from the 2NN CPs is added. We analytically prove that the symmetric hopping from the 2NN CPs cannot induce surface states in Type I when each CP has only one electron mode. The numerical calculations also provide strong support for the conclusion, even up to 5NN. However, in general, the coupling from the 2NN CPs (symmetric and asymmetric) is favorable to generate surface states except Type I with single electron mode only. (paper)

Trapping of antiprotons -- a first step on the way to antihydrogen

International Nuclear Information System (INIS)

Holzscheiter, M.H.

1993-01-01

A first step towards producing and effectively utilizing antihydrogen atoms consists of trapping antiprotons. The immediate next step must then be to control, i.e. trap the produced antihydrogen. The current state of the art in trapping antiprotons and positrons is reviewed, and the challenges in trapping the resulting neutral particles are discussed

Understanding and removing surface states limiting charge transport in TiO2 nanowire arrays for enhanced optoelectronic device performance.

Science.gov (United States)

Sheng, Xia; Chen, Liping; Xu, Tao; Zhu, Kai; Feng, Xinjian

2016-03-01

Charge transport within electrode materials plays a key role in determining the optoelectronic device performance. Aligned single-crystal TiO 2 nanowire arrays offer an ideal electron transport path and are expected to have higher electron mobility. Unfortunately, their transport is found not to be superior to that in nanoparticle films. Here we show that the low electron transport in rutile TiO 2 nanowires is mainly caused by surface traps in relatively deep energy levels, which cannot be removed by conventional approaches, such as oxygen annealing treatment. Moreover, we demonstrate an effective wet-chemistry approach to minimize these trap states, leading to over 20-fold enhancement in electron diffusion coefficient and 62% improvement in solar cell performance. On the basis of our results, the potential of TiO 2 NWs can be developed and well-utilized, which is significantly important for their practical applications.

Simulation of the elementary evolution operator with the motional states of an ion in an anharmonic trap

Energy Technology Data Exchange (ETDEWEB)

Santos, Ludovic; Vaeck, Nathalie [Laboratoire de Chimie Quantique et Photophysique, CP 160/09 Université Libre de Bruxelles, B-1050 Brussels (Belgium); Justum, Yves [Laboratoire de Chimie Physique, UMR 8000 and CNRS, Université Paris-Sud, F-91405 Orsay (France); Desouter-Lecomte, M. [Laboratoire de Chimie Physique, UMR 8000 and CNRS, Université Paris-Sud, F-91405 Orsay (France); Département de Chimie, Université de Liège, Bât B6c, Sart Tilman B-4000, Liège (Belgium)

2015-04-07

Following a recent proposal of L. Wang and D. Babikov [J. Chem. Phys. 137, 064301 (2012)], we theoretically illustrate the possibility of using the motional states of a Cd{sup +} ion trapped in a slightly anharmonic potential to simulate the single-particle time-dependent Schrödinger equation. The simulated wave packet is discretized on a spatial grid and the grid points are mapped on the ion motional states which define the qubit network. The localization probability at each grid point is obtained from the population in the corresponding motional state. The quantum gate is the elementary evolution operator corresponding to the time-dependent Schrödinger equation of the simulated system. The corresponding matrix can be estimated by any numerical algorithm. The radio-frequency field which is able to drive this unitary transformation among the qubit states of the ion is obtained by multi-target optimal control theory. The ion is assumed to be cooled in the ground motional state, and the preliminary step consists in initializing the qubits with the amplitudes of the initial simulated wave packet. The time evolution of the localization probability at the grids points is then obtained by successive applications of the gate and reading out the motional state population. The gate field is always identical for a given simulated potential, only the field preparing the initial wave packet has to be optimized for different simulations. We check the stability of the simulation against decoherence due to fluctuating electric fields in the trap electrodes by applying dissipative Lindblad dynamics.

Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy

International Nuclear Information System (INIS)

Zhang, Z.; Arehart, A. R.; Hurni, C. A.; Speck, J. S.; Ringel, S. A.

2012-01-01

Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) were utilized to investigate the behavior of deep states in m-plane, n-type GaN grown by ammonia-based molecular beam epitaxy (NH 3 -MBE) as a function of systematically varied V/III growth flux ratios. Levels were detected at E C - 0.14 eV, E C - 0.21 eV, E C - 0.26 eV, E C - 0.62 eV, E C - 0.67 eV, E C - 2.65 eV, and E C - 3.31 eV, with the concentrations of several traps exhibiting systematic dependencies on V/III ratio. The DLTS spectra are dominated by traps at E C - 0.14 eV and E C - 0.67 eV, whose concentrations decreased monotonically with increasing V/III ratio and decreasing oxygen impurity concentration, and by a trap at E C - 0.21 eV that revealed no dependence of its concentration on growth conditions, suggestive of different physical origins. Higher concentrations of deeper trap states detected by DLOS with activation energies of E C - 2.65 eV and E C - 3.31 eV in each sample did not display measureable sensitivity to the intentionally varied V/III ratio, necessitating further study on reducing these deep traps through growth optimization for maximizing material quality of NH 3 -MBE grown m-plane GaN.

Optical Trapping of Ion Coulomb Crystals

Science.gov (United States)

Schmidt, Julian; Lambrecht, Alexander; Weckesser, Pascal; Debatin, Markus; Karpa, Leon; Schaetz, Tobias

2018-04-01

The electronic and motional degrees of freedom of trapped ions can be controlled and coherently coupled on the level of individual quanta. Assembling complex quantum systems ion by ion while keeping this unique level of control remains a challenging task. For many applications, linear chains of ions in conventional traps are ideally suited to address this problem. However, driven motion due to the magnetic or radio-frequency electric trapping fields sometimes limits the performance in one dimension and severely affects the extension to higher-dimensional systems. Here, we report on the trapping of multiple barium ions in a single-beam optical dipole trap without radio-frequency or additional magnetic fields. We study the persistence of order in ensembles of up to six ions within the optical trap, measure their temperature, and conclude that the ions form a linear chain, commonly called a one-dimensional Coulomb crystal. As a proof-of-concept demonstration, we access the collective motion and perform spectrometry of the normal modes in the optical trap. Our system provides a platform that is free of driven motion and combines advantages of optical trapping, such as state-dependent confinement and nanoscale potentials, with the desirable properties of crystals of trapped ions, such as long-range interactions featuring collective motion. Starting with small numbers of ions, it has been proposed that these properties would allow the experimental study of many-body physics and the onset of structural quantum phase transitions between one- and two-dimensional crystals.

Dual-stage trapped-flux magnet cryostat for measurements at high magnetic fields

Science.gov (United States)

Islam, Zahirul; Das, Ritesh K.; Weinstein, Roy

2015-04-14

A method and a dual-stage trapped-flux magnet cryostat apparatus are provided for implementing enhanced measurements at high magnetic fields. The dual-stage trapped-flux magnet cryostat system includes a trapped-flux magnet (TFM). A sample, for example, a single crystal, is adjustably positioned proximate to the surface of the TFM, using a translation stage such that the distance between the sample and the surface is selectively adjusted. A cryostat is provided with a first separate thermal stage provided for cooling the TFM and with a second separate thermal stage provided for cooling sample.

Magnet system of the ''AMBAL'' experimental trap with ambipolar mirrors

International Nuclear Information System (INIS)

Dimov, G.I.; Lysyanskij, P.B.; Tadber, M.V.; Timoshin, I.Ya.; Shrajner, K.K.

1982-01-01

A magnet system of the ''AMBAL'' ambipolar trap under construction is described. The trap magnetic field configuration, geometry of the main coils and diagram of the whole device magnet system are outlined. Drift surface cross sections in the equatorial plane of the ring mirror device, in the median plane and at different distances from the trap median plane are presented. The magnet system design is described in brief

New evidence for surface water ice in small-scale cold traps and in three large craters at the north polar region of Mercury from the Mercury Laser Altimeter

Science.gov (United States)

Deutsch, Ariel N.; Neumann, Gregory A.; Head, James W.

2017-09-01

The Mercury Laser Altimeter (MLA) measured surface reflectance, rs, at 1064 nm. On Mercury, most water-ice deposits have anomalously low rs values indicative of an insulating layer beneath which ice is buried. Previous detections of surface water ice (without an insulating layer) were limited to seven possible craters. Here we map rs in three additional permanently shadowed craters that host radar-bright deposits. Each crater has a mean rs value >0.3, suggesting that water ice is exposed at the surface without an overlying insulating layer. We also identify small-scale cold traps (rs >0.3 and permanent shadows have biannual maximum surface temperatures <100 K. We suggest that a substantial amount of Mercury's water ice is not confined to large craters but exists within microcold traps, within rough patches and intercrater terrain.

The Path to High Q-Factors in Superconducting Accelerating Cavities: Flux Expulsion and Surface Resistance Optimization

Energy Technology Data Exchange (ETDEWEB)

Martinello, Martina [Illinois Inst. of Technology, Chicago, IL (United States)

2016-12-01

Accelerating cavities are devices resonating in the radio-frequency (RF) range used to accelerate charged particles in accelerators. Superconducting accelerating cavities are made out of niobium and operate at the liquid helium temperature. Even if superconducting, these resonating structures have some RF driven surface resistance that causes power dissipation. In order to decrease as much as possible the power losses, the cavity quality factor must be increased by decreasing the surface resistance. In this dissertation, the RF surface resistance is analyzed for a large variety of cavities made with different state-of-the-art surface treatments, with the goal of finding the surface treatment capable to return the highest Q-factor values in a cryomodule-like environment. This study analyzes not only the superconducting properties described by the BCS surface resistance, which is the contribution that takes into account dissipation due to quasi-particle excitations, but also the increasing of the surface resistance due to trapped flux. When cavities are cooled down below their critical temperature inside a cryomodule, there is always some remnant magnetic field that may be trapped increasing the global RF surface resistance. This thesis also analyzes how the fraction of external magnetic field, which is actually trapped in the cavity during the cooldown, can be minimized. This study is performed on an elliptical single-cell horizontally cooled cavity, resembling the geometry of cavities cooled in accelerator cryomodules. The horizontal cooldown study reveals that, as in case of the vertical cooldown, when the cooling is performed fast, large thermal gradients are created along the cavity helping magnetic flux expulsion. However, for this geometry the complete magnetic flux expulsion from the cavity equator is more difficult to achieve. This becomes even more challenging in presence of orthogonal magnetic field, that is easily trapped on top of the cavity equator

The path to high Q-factors in superconducting accelerating cavities: Flux expulsion and surface resistance optimization

Science.gov (United States)

Martinello, Martina

Accelerating cavities are devices resonating in the radio-frequency (RF) range used to accelerate charged particles in accelerators. Superconducting accelerating cavities are made out of niobium and operate at the liquid helium temperature. Even if superconducting, these resonating structures have some RF driven surface resistance that causes power dissipation. In order to decrease as much as possible the power losses, the cavity quality factor must be increased by decreasing the surface resistance. In this dissertation, the RF surface resistance is analyzed for a large variety of cavities made with different state-of-the-art surface treatments, with the goal of finding the surface treatment capable to return the highest Q-factor values in a cryomodule-like environment. This study analyzes not only the superconducting properties described by the BCS surface resistance, which is the contribution that takes into account dissipation due to quasi-particle excitations, but also the increasing of the surface resistance due to trapped flux. When cavities are cooled down below their critical temperature inside a cryomodule, there is always some remnant magnetic field that may be trapped increasing the global RF surface resistance. This thesis also analyzes how the fraction of external magnetic field, which is actually trapped in the cavity during the cooldown, can be minimized. This study is performed on an elliptical single-cell horizontally cooled cavity, resembling the geometry of cavities cooled in accelerator cryomodules. The horizontal cooldown study reveals that, as in case of the vertical cooldown, when the cooling is performed fast, large thermal gradients are created along the cavity helping magnetic flux expulsion. However, for this geometry the complete magnetic flux expulsion from the cavity equator is more difficult to achieve. This becomes even more challenging in presence of orthogonal magnetic field, that is easily trapped on top of the cavity equator

Tuning the Electronic and Dynamical Properties of a Molecule by Atom Trapping Chemistry.

Science.gov (United States)

Pham, Van Dong; Repain, Vincent; Chacon, Cyril; Bellec, Amandine; Girard, Yann; Rousset, Sylvie; Abad, Enrique; Dappe, Yannick J; Smogunov, Alexander; Lagoute, Jérôme

2017-11-28

The ability to trap adatoms with an organic molecule on a surface has been used to obtain a range of molecular functionalities controlled by the choice of the molecular trapping site and local deprotonation. The tetraphenylporphyrin molecule used in this study contains three types of trapping sites: two carbon rings (phenyl and pyrrole) and the center of a macrocycle. Catching a gold adatom on the carbon rings leads to an electronic doping of the molecule, whereas trapping the adatom at the macrocycle center with single deprotonation leads to a molecular rotor and a second deprotonation leads to a molecular jumper. We call "atom trapping chemistry" the control of the structure, electronic, and dynamical properties of a molecule achieved by trapping metallic atoms with a molecule on a surface. In addition to the examples previously described, we show that more complex structures can be envisaged.

Confinement in a cryogenic Penning trap of highest charge state ions from EBIT

International Nuclear Information System (INIS)

Schneider, D.

1994-01-01

The retrapping of highly charged Xe 44+ and Th 68+,72+ ions extracted from an open-quotes Electron Beam Ion Trapclose quotes (EBIT) is demonstrated after injection of the ions into RETRAP, a cryogenic Penning trap (up to 6 Tesla magnetic field) currently with an open cylinder design. Ion extraction in a short pulse (5-20 μsec) from EBIT, essential for efficient retrapping, is employed. The ions are slowed down upon entering a deceleration tube mounted above the trap within the magnetic field. The potential is then rapidly (100 ns) decreased, enabling low energy ions to enter the trap. Capture efficiencies up to 25% are observed via detection of the delayed ion release pulse with a detector below the trap. Signal voltages induced in a tuned circuit due to single and multiple ions have been observed by tuning the ion resonant axial oscillation frequencies for different ions. Results from transporting and retrapping of the ions, as well as their detection, are described and the trapping efficiency is discussed, The motivation for these studies is to cool the trapped very highly charged ions to low temperatures (< 4 K) in order to perform ultrahigh resolution precision spectroscopy, collision studies at ultra low energies and to observe phase transitions in Coulomb clusters of highly charged ions

Novel extension of the trap model for electrons in liquid hydrocarbons

International Nuclear Information System (INIS)

Jamal, M.A.; Watt, D.E.

1981-01-01

A novel extension for the trap model of electron mobilities in liquid hydrocarbons is described. The new model assumes: (a) two main types of electron trap exist in liquid hydrocarbons, one is deep and the second is shallow; (b) these traps are the same in all liquid alkanes. The difference in electron mobilities in different alkanes is accounted for by the difference in the frequency of electron trapping in each state. The probability of trapping in each state has been evaluated from the known structures of the normal alkanes. Electron mobilities in normal alkanes (C 3 -C 10 ) show a very good correlation with the probability of trapping in deep traps, suggesting that the C-C bonds are the main energy sinks of the electron. A mathematical formula which expresses the electron mobility in terms of the probability of trapping in deep traps has been found from the Arrhenius relationship between electron mobilities and probability of trapping. The model has been extended for branched alkanes and the relatively high electron mobilities in globular alkanes has been explained by the fact that each branch provides some degree of screening to the skeleton structure of the molecule resulting in reduction of the probability of electron interaction with the molecular skeleton. (author)

Bounds on area and charge for marginally trapped surfaces with a cosmological constant

International Nuclear Information System (INIS)

Simon, Walter

2012-01-01

We sharpen the known inequalities AΛ ≤ 4π(1 - g) (Hayward et al 1994 Phys. Rev. D 49 5080, Woolgar 1999 Class. Quantum Grav. 16 3005) and A ≤ 4πQ 2 (Dain et al 2012 Class. Quantum Grav. 29 035013) between the area A and the electric charge Q of a stable marginally outer-trapped surface (MOTS) of genus g in the presence of a cosmological constant Λ. In particular, instead of requiring stability we include the principal eigenvalue λ of the stability operator. For Λ* Λ+λ > 0, we obtain a lower and an upper bound for Λ*A in terms of Λ*Q 2 , as well as the upper bound Q≤1/(2√(Λ * )) for the charge, which reduces to Q≤1/(2√(Λ)) in the stable case λ ≥ 0. For Λ* < 0, there only remains a lower bound on A. In the spherically symmetric, static, stable case, one of our area inequalities is saturated iff the surface gravity vanishes. We also discuss implications of our inequalities for 'jumps' and mergers of charged MOTS. (fast track communication)

Fabrication and optical characterization of light trapping silicon nanopore and nanoscrew devices

International Nuclear Information System (INIS)

Jin, Hyunjong; Logan Liu, G

2012-01-01

We have fabricated nanotextured Si substrates that exhibit controllable optical reflection intensities and colors. Si nanopore has a photon trapping nanostructure but has abrupt changes in the index of refraction displaying a darkened specular reflection. Nanoscrew Si shows graded refractive-index photon trapping structures that enable diffuse reflection to be as low as 2.2% over the visible wavelengths. By tuning the 3D nanoscale silicon structure, the optical reflection peak wavelength and intensity are changed in the wavelength range of 300–800 nm, making the surface have different reflectivity and apparent colors. The relation between the surface optical properties with the spatial features of the photon trapping nanostructures is examined. Integration of photon trapping structures with planar Si structure on the same substrate is also demonstrated. The tunable photon trapping silicon structures have potential applications in enhancing the performance of semiconductor photoelectric devices. (paper)

Recent progress in the understanding of H transport and trapping in W

International Nuclear Information System (INIS)

Schmid, K; Bauer, J; Schwarz-Selinger, T; Toussaint, U v; Manhard, A; Jacob, W; Markelj, S

2017-01-01

The retention of hydrogen isotopes (HIs) (H, D and T) in the first, plasma exposed wall is one of the key concerns for the operation of future long pulse fusion devices. It affects the particle-, momentum- and energy balance in the scrape off layer as well as the retention of HIs and their permeation into the coolant. The currently accepted picture that is used for interpreting current laboratory and tokamak experiments is that of diffusion hindered by trapping at lattice defects. This paper summarises recent results that show that this current picture of how HIs are transported and retained in W needs to be extended: the modification of the surface (e.g. blistering) can lead to the formation of fast loss channels for near surface HIs. Trapping at single occupancy traps with fixed de-trapping energy fails to explain isotope exchange experiments, instead a trapping model with multi occupancy traps and fill level dependent de-trapping energies is required. The presence of interstitial impurities like N or C may affect the transport of solute HI. The presence of HIs during damage creation by e.g. neutrons stabilises defects and reduces defect annealing at elevated temperatures. (paper)

Commissioning of the double Penning trap system MLLTRAP and first studies on mass-dependent systematic uncertainties

Energy Technology Data Exchange (ETDEWEB)

Krug, Kevin; Weber, Christine; Thirolf, Peter G.; Szerypo, Jerzy; Gartzke, Eva; Habs, Dietrich [Fakultaet fuer Physik, LMU Muenchen (Germany); Kolhinen, Veli [Fakultaet fuer Physik, LMU Muenchen (Germany); Department of Physics, University of Jyvaeskylae (Finland)

2010-07-01

The cylindrical double Penning trap system MLLTRAP in its commissioning phase at the Maier-Leibnitz-Laboratory (MLL) Tandem accelerator in Garching is designed to perform high-accuracy mass measurements on fusion-reaction products. As the mass uncertainty is inversely proportional to the ionic charge state, the ions of interest will be charge bred prior to injection into the Penning trap system. In the future setup, both traps are foreseen to be operated as measurement traps with a relative homogeneity of the magnetic field at the trapping sites of {delta}B/B{<=}0.3 ppm. In the commissioning phase, an offline surface ionization source is used for iterative optimization of the apparatus and studies on mass-dependent systematic uncertainties. Mass measurements via the time-of-flight ion cyclotron resonance method (TOF-ICR) of reference ions with well-known masses ({sup 85}Rb, {sup 87}Rb, {sup 39}K, {sup 133}Cs) were carried out to analyze mass-dependent systematic effects. Together with previous studies on the uncertainty due to magnetic-field fluctuations the current status with respect to the limits of mass accuracy of the apparatus is presented.

Trapping mechanisms in scattering of beams at grazing incidence from crystals

International Nuclear Information System (INIS)

Smith, R.; O'Connor, D.J.; Felsobuki, E.I. von-Nagy

1993-01-01

The trajectories of grazing incidence, 1 keV beams of Si incident on Cu{111} are investigated by means of molecular dynamics (MD) simulations and the conditions under which atoms in the beam can be trapped in the surface binding potential are investigated. The binding potentials for the Cu-Si dimers are calculated using ab initio methods for the neutral, anion and cation. These calculations estimate the binding potential and equilibrium separation for the potential used for the MD calculations. It is found that at 4 o incidence to the Cu{111} face, no trapping occurs for a perfect crystal surface undergoing no thermal vibrations. Trapping can occur for the Si neutral if thermal vibrations are included in the model. Trapping is predicted to occur near steps on the Cu{111} face but these are fairly rare events for the Si - particles. (Author)

Optical Trapping of Ion Coulomb Crystals

Directory of Open Access Journals (Sweden)

Julian Schmidt

2018-05-01

Full Text Available The electronic and motional degrees of freedom of trapped ions can be controlled and coherently coupled on the level of individual quanta. Assembling complex quantum systems ion by ion while keeping this unique level of control remains a challenging task. For many applications, linear chains of ions in conventional traps are ideally suited to address this problem. However, driven motion due to the magnetic or radio-frequency electric trapping fields sometimes limits the performance in one dimension and severely affects the extension to higher-dimensional systems. Here, we report on the trapping of multiple barium ions in a single-beam optical dipole trap without radio-frequency or additional magnetic fields. We study the persistence of order in ensembles of up to six ions within the optical trap, measure their temperature, and conclude that the ions form a linear chain, commonly called a one-dimensional Coulomb crystal. As a proof-of-concept demonstration, we access the collective motion and perform spectrometry of the normal modes in the optical trap. Our system provides a platform that is free of driven motion and combines advantages of optical trapping, such as state-dependent confinement and nanoscale potentials, with the desirable properties of crystals of trapped ions, such as long-range interactions featuring collective motion. Starting with small numbers of ions, it has been proposed that these properties would allow the experimental study of many-body physics and the onset of structural quantum phase transitions between one- and two-dimensional crystals.

Study of surface leakage current of AlGaN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Chen, YongHe; Zhang, Kai; Cao, MengYi; Zhao, ShengLei; Zhang, JinCheng; Hao, Yue; Ma, XiaoHua

2014-01-01

Temperature-dependent surface current measurements were performed to analyze the mechanism of surface conductance of AlGaN/GaN channel high-electron-mobility transistors by utilizing process-optimized double gate structures. Different temperatures and electric field dependence have been found in surface current measurements. At low electric field, the mechanism of surface conductance is considered to be two-dimensional variable range hopping. At elevated electric field, the Frenkel–Poole trap assisted emission governs the main surface electrons transportation. The extracted energy barrier height of electrons emitting from trapped state near Fermi energy level into a threading dislocations-related continuum state is 0.38 eV. SiN passivation reduces the surface leakage current by two order of magnitude and nearly 4 orders of magnitude at low and high electric fields, respectively. SiN also suppresses the Frenkel–Poole conductance at high temperature by improving the surface states of AlGaN/GaN. A surface treatment process has been introduced to further suppress the surface leakage current at high temperature and high field, which results in a decrease in surface current of almost 3 orders of magnitude at 476 K

A biodetection method using magnetic particles and micro traps

KAUST Repository

Li, Fuquan

2012-03-09

The general working principle of magnetoresistive sensors for biological applications is to specifically attach bioanalytesto magnetic particles and then detect the particles that are immobilized on the sensor surface. The immobilization of the particles on the sensor surface commonly uses biomolecular interactions, e.g., antigen-antibody. Thus, the sensor surface needs to be functionalized via biological treatments in order to capture certain bioanalytes. In the presented work, a new method is proposed, which does not rely on functionalization of the sensor surface. Current carrying microstructures in combination with mechanical micro traps are used to immobilize magnetic particles. Analyte detection is based on the difference in size between bare magnetic particles and particles with analyte attached, which causes a different number of particles to be captured in the micro traps.

Trapped Ion Quantum Computation by Adiabatic Passage

International Nuclear Information System (INIS)

Feng Xuni; Wu Chunfeng; Lai, C. H.; Oh, C. H.

2008-01-01

We propose a new universal quantum computation scheme for trapped ions in thermal motion via the technique of adiabatic passage, which incorporates the advantages of both the adiabatic passage and the model of trapped ions in thermal motion. Our scheme is immune from the decoherence due to spontaneous emission from excited states as the system in our scheme evolves along a dark state. In our scheme the vibrational degrees of freedom are not required to be cooled to their ground states because they are only virtually excited. It is shown that the fidelity of the resultant gate operation is still high even when the magnitude of the effective Rabi frequency moderately deviates from the desired value.

Analysis of the effect of polarization traps and shallow impurities on the interlevel light absorption of quantum dots

Directory of Open Access Journals (Sweden)

V.I. Boichuk

2017-12-01

Full Text Available A spherical quantum dot (QD heterosystem CdS/SiO2 has been studied. Each QD has a hydrogen-like impurity in its center. Besides that, it has been accounted that a polarization trap for electron exists at the interfaces due to the difference between the QD and matrix dielectric permittivity. It has been defined that for small QD radii there are surface electron states. For different radii, partial contributions of the surface states into the electron energy caused by the electron-ion and electron-polarization charges interaction have been defined. The linear light absorption coefficient of noninteracting QDs has been calculated taking into account the QD dispersion by the size. It is shown that the surface states can be observed into different ranges of an electromagnetic spectrum.

Improving detection tools for emerald ash borer (Coleoptera: Buprestidae): comparison of multifunnel traps, prism traps, and lure types at varying population densities.

Science.gov (United States)

Crook, Damon J; Francese, Joseph A; Rietz, Michael L; Lance, David R; Hull-Sanders, Helen M; Mastro, Victor C; Silk, Peter J; Ryall, Krista L

2014-08-01

The emerald ash borer, Agrilus planipennis Fairmaire (Coleoptera: Buprestidae), is a serious invasive pest of North American ash (Fraxinus spp.) that has caused devastating mortality since it was first identified in North America in 2002. In 2012, we conducted field trapping assays that tested the efficacy of purple prism and fluon-coated green multifunnel (Lindgren funnel) traps. Traps were baited with combinations of several lures that were previously shown to be attractive to A. planipennis: manuka oil--a sesquiterpene-rich oil, (3Z)-hexenol--a green leaf volatile, or (3Z)-dodecen-12-olide [= (3Z)-lactone], a sex pheromone. Eighty-nine blocks (trap lines) were tested throughout nine states along the outer edges of the currently known A. planipennis infestation in North America. Trap catch was highest on fluon-coated green multifunnel traps, and trap detections at sites with low A. planipennis population density ranged from 72 to 76% for all trap and lure types tested. (3Z)-hexenol and (3Z)-lactone baited traps functioned as well as (3Z)-hexenol and manuka oil-baited traps. Independent of the lure used, detection rates on green fluon-coated multifunnel traps were comparable with glued purple prism traps in areas with low A. planipennis population densities.

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

International Nuclear Information System (INIS)

Anand, M. J.; Ng, G. I.; Syamal, B.; Zhou, X.; Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C.

2015-01-01

The influence of electric field (EF) on the dynamic ON-resistance (dyn-R DS[ON] ) and threshold-voltage shift (ΔV th ) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (I DS -V DS ) and drain current (I D ) transients. Different EF was realized with devices of different gate-drain spacing (L gd ) under the same OFF-state stress. Under high-EF (L gd  = 2 μm), the devices exhibited higher dyn-R DS[ON] degradation but a small ΔV th (∼120 mV). However, at low-EF (L gd  = 5 μm), smaller dyn-R DS[ON] degradation but a larger ΔV th (∼380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-R DS[ON] degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔV th . A trap with activation energy 0.33 eV was identified in the AlGaN barrier by I D -transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations

Trapping and interactions of an ultracold gas of Cs2 molecules

International Nuclear Information System (INIS)

Mark, M.; Kraemer, T.; Herbig, J.; Waldburger, P.; Naegerl, H.C.; Chin, C.; Grimm, R.

2005-01-01

Full text: We investigate dynamics and interactions of Cs 2 dimers in a CO2-laser dipole trap. Starting with a Bose-Einstein condensate (BEC) of 2.2 x 10 5 Cs atoms, we create ultracold molecules in a single, weakly bound quantum state by sweeping the magnetic field across a narrow Feshbach resonance. When the molecules are created in free space, the conversion efficiency exceeds 30 %, yielding up to 50000 molecules. In our trapping experiments, about 6000 ultracold Cs 2 dimers are prepared in the optical trap at a temperature of 200 nK. We transfer the trapped molecules from the initial molecular state to other molecular states by following avoided crossings. We find two magnetically tunable resonances in collisions between the molecules for one of the molecular states. We interpret these Feshbach-liKEX resonances as being induced by Cs 4 bound states near the molecular scattering continuum. Further, we have discovered a new molecular state with very large orbital angular momentum of l = 8. This state is very weakly coupled to one of the initial molecular states. We use the associated avoided crossing as a molecular beam splitter to realize a molecular Ramsey-type interferometer. Refs. 2 (author)

Laser cooling and trapping of barium

NARCIS (Netherlands)

De, Subhadeep

2008-01-01

Laser cooling and trapping of heavy alkaline-earth element barium have been demonstrated for the first time ever. For any possible cycling transition in barium that could provide strong cooling forces, the excited state has a very large branching probability to metastable states. Additional lasers

Levitated atoms in a CO2 laser trap: towards BEC with cesium

International Nuclear Information System (INIS)

Herbig, J.; Weber, T.; Naegerl, H.-C.; Grimm, R.

2001-01-01

Full text: Since the standard approach towards Bose-Einstein condensation has failed for cesium, we are exploring a novel concept employing an optical dipole trap formed by intense CO2 lasers. These provide a conservative and large-volume trapping potential. In order to compensate the gravitational force, a magnetic field gradient along the vertical axis is applied. This counterbalances gravitation for the absolute internal ground state of Cs (F=3, mF=3), effectively levitating those atoms. Other spin states are expelled from the trap, opening up a path for rf exploration. Our approach to trap the lowest spin state at low densities minimizes inelastic processes. The free choice of a magnetic bias field allows exploration of Feshbach resonances to tune scattering properties. (author)

Radiation of electrons in an electromagnetic axial trap

International Nuclear Information System (INIS)

Toropova, A.I.

1998-01-01

The version of a trap. wherein particles move in a homogeneous constant magnetic field and electrostatic field, formed by two equipotential planes and rotation axial surface, is proposed. The solution of canonic equations is found. It is shown that interaction of electrons with the radiation field leads to damping parametric resonance. The trap model, accounting for the finite conductivity of the resonator walls and losses by collisions with gas, is studied

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

Energy Technology Data Exchange (ETDEWEB)

Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn; Chi, Li-Feng, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

2015-03-23

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

International Nuclear Information System (INIS)

Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin; Chi, Li-Feng; Wang, Sui-Dong

2015-01-01

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process

Advanced methods for light trapping in optically thin silicon solar cells

Science.gov (United States)

Nagel, James Richard

2011-12-01

The field of light trapping is the study of how best to absorb light in a thin film of material when most light either reflects away at the surface or transmits straight through to the other side. This has tremendous application to the field of photovoltaics where thin silicon films can be manufactured cheaply, but also fail to capture all of the available photons in the solar spectrum. Advancements in light trapping therefore bring us closer to the day when photovoltaic devices may reach grid parity with traditional fossil fuels on the electrical energy market. This dissertation advances our understanding of light trapping by first modeling the effects of loss in planar dielectric waveguides. The mathematical framework developed here can be used to model any arbitrary three-layer structure with mixed gain or loss and then extract the total field solution for the guided modes. It is found that lossy waveguides possess a greater number of eigenmodes than their lossless counterparts, and that these "loss guided" modes attenuate much more rapidly than conventional modes. Another contribution from this dissertation is the exploration of light trapping through the use of dielectric nanospheres embedded directly within the active layer of a thin silicon film. The primary benefit to this approach is that the device can utilize a surface nitride layer serving as an antireflective coating while still retaining the benefits of light trapping within the film. The end result is that light trapping and light injection are effectively decoupled from each other and may be independently optimized within a single photovoltaic device. The final contribution from this work is a direct numerical comparison between multiple light trapping schemes. This allows us to quantify the relative performances of various design techniques against one another and objectively determine which ideas tend to capture the most light. Using numerical simulation, this work directly compares the absorption

A time-sorting pitfall trap and temperature datalogger for the sampling of surface-active arthropods

Directory of Open Access Journals (Sweden)

Marshall S. McMunn

2017-04-01

Full Text Available Nearly all arthropods display consistent patterns of activity according to time of day. These patterns of activity often limit the extent of animal co-occurrence in space and time. Quantifying when particular species are active and how activity varies with environmental conditions is difficult without the use of automated devices due to the need for continuous monitoring. Time-sorting pitfall traps passively collect active arthropods into containers with known beginning and end sample times. The trap described here, similar to previous designs, sorts arthropods by the time they fall into the trap using a rotating circular rack of vials. This trap represents a reduction in size, cost, and time of construction, while increasing the number of time windows sampled. The addition of temperature data collection extends functionality, while the use of store-bought components and inclusion of customizable software make the trap easy to reproduce and use.

Theoretical study of charge trapping levels in silicon nitride using the LDA-1/2 self-energy correction scheme for excited states

International Nuclear Information System (INIS)

Patrocinio, Weslley S.; Ribeiro, Mauro; Fonseca, Leonardo R.C.

2012-01-01

Silicon nitride, with a permittivity mid-way between SiO 2 and common high-k materials such as HfO 2 , is widely used in microelectronics as an insulating layer on top of oxides where it serves as an impurity barrier with the positive side effect of increasing the dielectric constant of the insulator when it is SiO 2 . It is also employed as charge storage in nonvolatile memory devices thanks to its high concentration of charge traps. However, in the case of memories, it is still unclear which defects are responsible for charge trapping and what is the impact of defect concentration on the structural and electronic properties of SiN x . Indeed, for the amorphous phase the band gap was measured in the range 5.1–5.5 eV, with long tails in the density of states penetrating the gap region. It is still not clear which defects are responsible for the tails. On the other hand, the K-center defects have been associated with charge trapping, though its origin is assigned to one Si back bond. To investigate the contribution of defect states to the band edge tails and band gap states, we adopted the β phase of stoichiometric silicon nitride (β-Si 3 N 4 ) as our model material and calculated its electronic properties employing ab initio DFT/LDA simulations with self-energy correction to improve the location of defect states in the SiN x band gap through the correction of the band gap underestimation typical of DFT/LDA. We considered some important defects in SiN x , as the Si anti-site and the N vacancy with H saturation, in two defect concentrations. The location of our calculated defect levels in the band gap correlates well with the available experimental data, offering a structural explanation to the measured band edge tails and charge trapping characteristics.

Tritium trapping states induced by lithium-depletion in Li{sub 2}TiO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, Makoto, E-mail: kobayashi.makoto@LHD.nifs.ac.jp [National Institute for Fusion Science (Japan); Oya, Yasuhisa; Okuno, Kenji [Radioscience Research Laboratory, Faculty of Science, Shizuoka University, Shizuoka (Japan)

2017-04-15

Identifications of tritium trapping states in neutron-irradiated Li{sub 1.8}TiO{sub 2.9} (lithium-depleted Li{sub 2}TiO{sub 3}) were carried out by the out-of-pile tritium release behavior. Tritium release behaviors for neutron-irradiated Li{sub 2}TiO{sub 3} and tritium gas-exposed TiO{sub 2} were also measured for comparison. Among the tritium release spectra for these samples, three tritium release peaks were appeared. By the kinetic analyses of tritium release behaviors, the Arrhenius parameters for three peaks were evaluated. Especially for Li{sub 1.8}TiO{sub 2.9}, there were two tritium release peaks, and the peak in lower temperature region was assigned to the tritium release controlled by the diffusion process in Li{sub 2}TiO{sub 3} structure. The other tritium release peak, which was hardly appeared for Li{sub 2}TiO{sub 3}, was assigned to the release of tritium trapped as hydroxyl groups in Li{sub 1.8}TiO{sub 2.9}, indicating that lithium-depletion would result in the formation of hydroxyl groups in Li{sub 2}TiO{sub 3}. Lithium vacancies existed in Li{sub 2}TiO{sub 3} crystal structure would promote the tritium trapping as hydroxyl groups due to the decreased charge repulsion between lithium ions and tritium ion, resulting in the difficulty of recovering tritium from Li{sub 2}TiO{sub 3} effectively.

Tunnelling Dynamics of Bose—Einstein Condensates in a Five-Well Trap

International Nuclear Information System (INIS)

Ai-Xia, Zhang; Shi-Ling, Tian; Rong-An, Tang; Ju-Kui, Xue

2008-01-01

We develop a five-well model for describing the tunnelling dynamics of Bose-Einstein condensates (BECs) trapped in 2D optical lattices. The tunnelling dynamics of BECs in this five-well model are investigated both analytically and numerically. We focus on the self-trapped states and the difference of the tunnelling dynamics among two-well, three-well and five-well systems. The criterions for the self-trapped states and the phase diagrams of the five trapped BECs in zero-phase mode and π-phase mode are obtained. We find that the criterions and the phase diagrams are largely modified by the dimension of the system and the phase difference between wells. The five-well model is a good model and can give us an insight into the tunnelling dynamics of BECs trapped in 2D optical lattices

Evaporative cooling of highly charged ions in EBIT [Electron Beam Ion Trap]: An experimental realization

International Nuclear Information System (INIS)

Schneider, M.B.; Levine, M.A.; Bennett, C.L.; Henderson, J.R.; Knapp, D.A.; Marrs, R.E.

1988-01-01

Both the total number and trapping lifetime of near-neon-like gold ions held in an electron beam ion trap have been greatly increased by a process of 'evaporative cooling'. A continuous flow of low-charge-state ions into the trap cools the high-charge-state ions in the trap. Preliminary experimental results using titanium ions as a coolant are presented. 8 refs., 6 figs., 2 tabs

Free radicals trapped in polyethylene matrix

International Nuclear Information System (INIS)

Shimada, S.; Maeda, M.; Hori, Y.; Kashiwabara, H.

1977-01-01

Two types of alkyl radicals were found to be trapped in irradiated crystals grown from polyethylene solution. One of them corresponds to the broad sextet pattern of the e.s.r. spectrum and the other corresponds to the sharp sextet pattern. The free radicals attributed to the broad sextet began to disappear at a lower temperature than the temperature at which the free radicals attributed to the sharp sextet disappeared. When butadiene molecules were brought into contact with the specimen, the decay of the free radicals corresponding to the broad sextet was accelerated. When the specimen was subjected to fuming nitric acid treatment, no broad sextet was observed. The mat of the crystals was aligned so that the c-axes of its crystallites were perpendicular to its surface. The broad sextet showed no anisotropy when the angle between the direction of applied magnetic field and that of the c-axis of the crystallite was varied. On the other hand, the sharp component of the spectrum showed apparent anisotropy. It can be concluded that the broad component comes from the free radicals trapped in the lamellar surface and the sharp component is attributed to the free radicals trapped in the inner part of the crystallite. (author)

On the positron-trapping states of metal mono-vacancies

International Nuclear Information System (INIS)

Sankar, S.; Iyakutti, K.

1987-07-01

A model calculation based on the static dielectric screening theory has been performed to estimate the probable number of positron-trapping levels in metal mono-vacancies and it is shown that there cannot be more than one. (author). 8 refs, 1 tab

Electron beam ion trap bi-annual report 1996/1997

International Nuclear Information System (INIS)

Schneider, D.

1999-01-01

The research of the EBIT (Electron Beam Ion Trap) program in N Division of the Physics and Space Technology Directorate at LLNL continues to contribute significantly to the understanding of physical processes with low energy highly charged ions in atomic physics, plasma physics, and material science. Low-energy highly charged ions (up to U 92+ ), provided by the EBIT facilities, provide a unique laboratory opportunity to study high field effects in atomic structures and dynamic interaction processes. The formation, existence, and structure of highly charged ions in astrophysical environments and laboratory plasmas make highly charged ions desirable for diagnosing various plasma conditions. The strong interaction of highly charged ions with matter and the response of solid surfaces make them a sensitive analysis tool and possibly a future capability for materials modifications at the atomic scale (nano technology). These physical applications require a good understanding and careful study of the dynamics of the interactions of the ions with complex systems. The EBIT group hosted an international conference and a workshop on trapped charged particles. The various talks and discussions showed that physics research with trapped charged particles is a very active and attractive area of innovative research, and provides a basis for research efforts in new areas. It also became obvious that the EBIT/RETRAP project has unique capabilities to perform important new experiments with trapped very highly charged ions at rest, which are complementary to and competitive with research at heavy ion storage rings and other trapping facilities planned or in operation in Europe, Japan, and the United States. Atomic structure research at EBIT provides ever better and more experimental complete benchmark data, supplying data needed to improve atomic theories. Research highlights through 1996 and 1997 include hyperfine structure measurements in H-like ions, QED studies, lifetime and

Characterization of photoactivated singlet oxygen damage in single-molecule optical trap experiments.

Science.gov (United States)

Landry, Markita P; McCall, Patrick M; Qi, Zhi; Chemla, Yann R

2009-10-21

Optical traps or "tweezers" use high-power, near-infrared laser beams to manipulate and apply forces to biological systems, ranging from individual molecules to cells. Although previous studies have established that optical tweezers induce photodamage in live cells, the effects of trap irradiation have yet to be examined in vitro, at the single-molecule level. In this study, we investigate trap-induced damage in a simple system consisting of DNA molecules tethered between optically trapped polystyrene microspheres. We show that exposure to the trapping light affects the lifetime of the tethers, the efficiency with which they can be formed, and their structure. Moreover, we establish that these irreversible effects are caused by oxidative damage from singlet oxygen. This reactive state of molecular oxygen is generated locally by the optical traps in the presence of a sensitizer, which we identify as the trapped polystyrene microspheres. Trap-induced oxidative damage can be reduced greatly by working under anaerobic conditions, using additives that quench singlet oxygen, or trapping microspheres lacking the sensitizers necessary for singlet state photoexcitation. Our findings are relevant to a broad range of trap-based single-molecule experiments-the most common biological application of optical tweezers-and may guide the development of more robust experimental protocols.

Sodium hydride precipitation in sodium cold traps

International Nuclear Information System (INIS)

McPheeters, C.C.; Raue, D.J.

1980-06-01

A series of experiments have been performed to test a calculational model for precipitation of NaH in sodium cold traps. The calculational model, called ACTMODEL, is a computer simulation that uses the system geometry and operating conditions as input to calculate a mass-transfer coefficient and the distribution of NaH in a cold trap. The ACTMODEL was tested using an analytical cold trap (ACT) that is simple and essentially one-dimensional. The ACT flow and temperature profile can be controlled at any desired condition. The ACT was analyzed destructively after each test to measure the actual NaH distribution. Excellent agreement was obtained between the ACTMODEL simulations and the experiments. Mass-transfer coefficients ranging upward from 6 x 10 -5 m/s were measured in both packless and packed traps. As much as a fourfold increase in precipitation surface area was observed with increasing amount of NaH deposited. 11 figures, 2 tables

Synthesis of antihydrogen atoms in a CUSP trap

Energy Technology Data Exchange (ETDEWEB)

Kuroda, Naofumi, E-mail: kuroda@phys.c.u-tokyo.ac.jp [University of Tokyo, Graduate School of Arts and Sciences (Japan); Enomoto, Yoshinori [RIKEN Advanced Science Institute (Japan); Michishio, Koji [Tokyo University of Science, Department of Physics (Japan); Kim, Chanhyoun [University of Tokyo, Graduate School of Arts and Sciences (Japan); Higaki, Hiroyuki [Hiroshima University, Graduate School of Advanced Science of Matter (Japan); Nagata, Yugo; Kanai, Yasuyuki [RIKEN Advanced Science Institute (Japan); Torii, Hiroyuki A. [University of Tokyo, Graduate School of Arts and Sciences (Japan); Corradini, Maurizzio; Leali, Marco; Lodi-Rizzini, Evandro; Mascagna, Valerio; Venturelli, Luca; Zurlo, Nicola [Universita di Brescia and Instituto Nazionale di Fisica Nucleare, Dipartimento di Chimica e Fisica per l' Ingegneria e per i Materiali (Italy); Fujii, Koki; Ohtsuka, Miki; Tanaka, Kazuo [University of Tokyo, Graduate School of Arts and Sciences (Japan); Imao, Hiroshi [RIKEN Nishina Center for Accelerator-Based Science (Japan); Nagashima, Yasuyuki [Tokyo University of Science, Department of Physics (Japan); Matsuda, Yasuyuki [University of Tokyo, Graduate School of Arts and Sciences (Japan); and others

2012-05-15

ASACUSA collaboration has been making a path to realize high precision microwave spectroscopy of ground-state hyperfine transitions of antihydrogen atom in flight for stringent test of the CPT symmetry. Recently, we have succeeded in synthesizing our first cold antihydrogen atoms employing a CUSP trap. It is expected that synthesized antihydrogen atoms in the low-field-seeking states are preferentially focused along the cusp magnetic field axis whereas those in the high-field-seeking states are not focused, resulting in the formation of a spin-polarized antihydrogen beam. We report the recent results of antihydrogen atom synthesis and beam production developed with the CUSP trap.

Synthesis of antihydrogen atoms in a CUSP trap

International Nuclear Information System (INIS)

Kuroda, Naofumi; Enomoto, Yoshinori; Michishio, Koji; Kim, Chanhyoun; Higaki, Hiroyuki; Nagata, Yugo; Kanai, Yasuyuki; Torii, Hiroyuki A.; Corradini, Maurizzio; Leali, Marco; Lodi-Rizzini, Evandro; Mascagna, Valerio; Venturelli, Luca; Zurlo, Nicola; Fujii, Koki; Ohtsuka, Miki; Tanaka, Kazuo; Imao, Hiroshi; Nagashima, Yasuyuki; Matsuda, Yasuyuki

2012-01-01

ASACUSA collaboration has been making a path to realize high precision microwave spectroscopy of ground-state hyperfine transitions of antihydrogen atom in flight for stringent test of the CPT symmetry. Recently, we have succeeded in synthesizing our first cold antihydrogen atoms employing a CUSP trap. It is expected that synthesized antihydrogen atoms in the low-field-seeking states are preferentially focused along the cusp magnetic field axis whereas those in the high-field-seeking states are not focused, resulting in the formation of a spin-polarized antihydrogen beam. We report the recent results of antihydrogen atom synthesis and beam production developed with the CUSP trap.

Trapping molecules in two and three dimensions

International Nuclear Information System (INIS)

Pinkse, PW.H.; Junglen, T.; Rieger, T.; Rangwala, S.A.; Windpassinger, P.; Rempe, G.

2005-01-01

Full text: Cold molecules offer a new testing ground for quantum-physical effects in nature. For example, producing slow beams of large molecules could push experiments studying the boundary between quantum interference and classical particles up towards ever heavier particles. Moreover, cold molecules, in particular YbF, seem an attractive way to narrow down the constraints on the value of the electron dipole moment and finally, quantum information processing using chains of cold polar molecules or vibrational states in molecules have been proposed. All these proposals rely on advanced production and trapping techniques, most of which are still under development. Therefore, novel production and trapping techniques for cold molecules could offer new possibilities not found in previous methods. Electric traps hold promise for deep trap potentials for neutral molecules. Recently we have demonstrated two-dimensional trapping of polar molecules in a four-wire guide using electrostatic and electrodynamic trapping techniques. Filled from a thermal effusive source, such a guide will deliver a beam of slow molecules, which is an ideal source for interferometry experiments with large molecules, for instance. Here we report about the extension of this work to three-dimensional trapping. Polar molecules with a positive Stark shift can be trapped in the minimum of an electrostatic field. We have successfully tested a large volume electrostatic trap for ND3 molecules. A special feature of this trap is that it can be loaded continuously from an electrostatic guide, at a temperature of a few hundred mK. (author)

Investigations of the ground-state hyperfine atomic structure and beta decay measurement prospects of ²¹Na with improved laser trapping techniques

Energy Technology Data Exchange (ETDEWEB)

Rowe, Mary Anderson [Univ. of California, Berkeley, CA (United States)

1999-05-01

This thesis describes an experiment in which a neutral atom laser trap loaded with radioactive ²¹Na was improved and then used for measurements. The sodium isotope (half-life=22 sec) is produced on line at the 88 in. cyclotron at Lawrence Berkeley National Laboratory. The author developed an effective magnesium oxide target system which is crucial to deliver a substantive beam of ²¹Na to the experiment. Efficient manipulation of the ²¹Na beam with lasers allowed 30,000 atoms to be contained in a magneto-optical trap. Using the cold trapped atoms, the author measured to high precision the hyperfine splitting of the atomic ground state of ²¹Na. She measured the 3S_1/2(F=1,m=0)-3S_1/2(F=2,m=0) atomic level splitting of ²¹Na to be 1,906,471,870±200 Hz. Additionally, she achieved initial detection of beta decay from the trap and evaluated the prospects of precision beta decay correlation studies with trapped atoms.

Chemical characterization of microparticles by laser ablation in an ion trap mass spectrometer

International Nuclear Information System (INIS)

Dale, J.M.; Whitten, W.B.; Ramsey, J.M.

1991-01-01

We are developing a new technique for the chemical characterization of microparticles based upon the use of electrodynamic traps. The electrodynamic trap has achieved widespread use in the mass spectrometry community in the form of the ion trap mass spectrometer or quadrupole ion trap. Small macroscopic particles can be confined or leviated within the electrode structure of a three-dimensional quadrupole electrodynamic trap in the same way as fundamental charges or molecular ions by using a combination of ac and dc potentials. Our concept is to use the same electrode structure to perform both microparticle levitation and ion trapping/mass analysis. The microparticle will first be trapped and spatially stabilized within the trap for characterization by optical probes, i.e., absorption, fluorescence, or Raman spectroscopy. After the particle has been optically characterized, it is further characterized using mass spectrometry. Ions are generated from the particle surface using laser ablation or desorption. The characteristics of the applied voltages are changed to trap the ions formed by the laser with the ions subsequently mass analyzed. The work described in this paper focuses on the ability to perform laser desorption experiments on microparticles contained within the ion trap. Laser desorption has previously been demonstrated in ion trap devices by applying the sample to a probe which is inserted so as to place the sample at the surface of the ring electrode. Our technique requires the placement of a microparticle in the center of the trap. Our initial experiments have been performed on falling microparticles rather than levitated particles to eliminate voltage switching requirements when changing from particle to ion trapping modes

Protection of surface states in topological nanoparticles

Science.gov (United States)

Siroki, Gleb; Haynes, Peter D.; Lee, Derek K. K.; Giannini, Vincenzo

2017-07-01

Topological insulators host protected electronic states at their surface. These states show little sensitivity to disorder. For miniaturization one wants to exploit their robustness at the smallest sizes possible. This is also beneficial for optical applications and catalysis, which favor large surface-to-volume ratios. However, it is not known whether discrete states in particles share the protection of their continuous counterparts in large crystals. Here we study the protection of the states hosted by topological insulator nanoparticles. Using both analytical and tight-binding simulations, we show that the states benefit from the same level of protection as those on a planar surface. The results hold for many shapes and sustain surface roughness which may be useful in photonics, spectroscopy, and chemistry. They complement past studies of large crystals—at the other end of possible length scales. The protection of the nanoparticles suggests that samples of all intermediate sizes also possess protected states.

Surface states in an external electric field

International Nuclear Information System (INIS)

Steslicka, M.

1975-10-01

Under conditions typical for field ion microscopy, true surface states can exist. Their shift towards higher energies can be quite significant and, moreover, additional surface levels at still higher energies can appear. The latter can play an important role in the process of tunneling of image gas electrons into surface states

Airfoil Drag Reduction using Controlled Trapped Vorticity Concentrations

Science.gov (United States)

Desalvo, Michael; Glezer, Ari

2017-11-01

The aerodynamic performance of a lifting surface at low angles of attack (when the base flow is fully attached) is improved through fluidic modification of its ``apparent'' shape by superposition of near-surface trapped vorticity concentrations. In the present wind tunnel investigations, a controlled trapped vorticity concentration is formed on the pressure surface of an airfoil (NACA 4415) using a hybrid actuator comprising a passive obstruction of scale O(0.01c) and an integral synthetic jet actuator. The jet actuation frequency [Stact O(10)] is selected to be at least an order of magnitude higher than the characteristic unstable frequency of the airfoil wake, thereby decoupling the actuation from the global instabilities of the base flow. Regulation of vorticity accumulation in the vicinity of the actuator by the jet effects changes in the local pressure, leading in turn to changes in the airfoil's drag and lift. Trapped vorticity can lead to a significant reduction in drag and reduced lift (owing to the sense of the vorticity), e.g. at α =4° and Re = 6.7 .105 the drag and lift reductions are 14% and 2%, respectively. PIV measurements show the spatial variation in the distribution of vorticity concentrations and yield estimates of the corresponding changes in circulation.

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

Energy Technology Data Exchange (ETDEWEB)

Anand, M. J., E-mail: anand2@e.ntu.edu.sg, E-mail: eging@ntu.edu.sg; Ng, G. I., E-mail: anand2@e.ntu.edu.sg, E-mail: eging@ntu.edu.sg; Syamal, B.; Zhou, X. [School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C. [Temasek Laboratories@NTU, Nanyang Technological University, 50 Nanyang Drive, Research Techno Plaza, Singapore 637553 (Singapore)

2015-02-23

The influence of electric field (EF) on the dynamic ON-resistance (dyn-R{sub DS[ON]}) and threshold-voltage shift (ΔV{sub th}) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (I{sub DS}-V{sub DS}) and drain current (I{sub D}) transients. Different EF was realized with devices of different gate-drain spacing (L{sub gd}) under the same OFF-state stress. Under high-EF (L{sub gd} = 2 μm), the devices exhibited higher dyn-R{sub DS[ON]} degradation but a small ΔV{sub th} (∼120 mV). However, at low-EF (L{sub gd} = 5 μm), smaller dyn-R{sub DS[ON]} degradation but a larger ΔV{sub th} (∼380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-R{sub DS[ON]} degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔV{sub th}. A trap with activation energy 0.33 eV was identified in the AlGaN barrier by I{sub D}-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations.

Dynamics of a Bose-Einstein condensate in a symmetric triple-well trap

Energy Technology Data Exchange (ETDEWEB)

Viscondi, Thiago F; Furuya, K, E-mail: viscondi@ifi.unicamp.br [Instituto de Fisica ' Gleb Wataghin' , Universidade Estadual de Campinas (UNICAMP), 13083-859 Campinas, SP (Brazil)

2011-04-29

We present a complete analysis of the dynamics of a Bose-Einstein condensate trapped in a symmetric triple-well potential. Our classical analogue treatment, based on a time-dependent variational method using SU(3) coherent states, includes the parameter dependence analysis of the equilibrium points and their local stability, which is closely related to the condensate collective behaviour. We also consider the effects of off-site interactions, and how these 'cross-collisions' may become relevant for a large number of trapped bosons. Even in the presence of cross-collisional terms, the model still features an integrable sub-regime, known as the twin-condensate dynamics, which corresponds to invariant surfaces in the classical phase space. However, the quantum dynamics preserves the twin-condensate defining characteristics only partially, thus breaking the invariance of the associated quantum subspace. Moreover, the periodic geometry of the trapping potential allowed us to investigate the dynamics of finite angular momentum collective excitations, which can be suppressed by the emergence of chaos. Finally, using the generalized purity associated with the su(3) algebra, we were able to quantify the dynamical classicality of a quantum evolved system, as compared to the corresponding classical trajectory.

Topological surface states in nodal superconductors.

Science.gov (United States)

Schnyder, Andreas P; Brydon, Philip M R

2015-06-24

Topological superconductors have become a subject of intense research due to their potential use for technical applications in device fabrication and quantum information. Besides fully gapped superconductors, unconventional superconductors with point or line nodes in their order parameter can also exhibit nontrivial topological characteristics. This article reviews recent progress in the theoretical understanding of nodal topological superconductors, with a focus on Weyl and noncentrosymmetric superconductors and their protected surface states. Using selected examples, we review the bulk topological properties of these systems, study different types of topological surface states, and examine their unusual properties. Furthermore, we survey some candidate materials for topological superconductivity and discuss different experimental signatures of topological surface states.

Topological surface states in nodal superconductors

International Nuclear Information System (INIS)

Schnyder, Andreas P; Brydon, Philip M R

2015-01-01

Topological superconductors have become a subject of intense research due to their potential use for technical applications in device fabrication and quantum information. Besides fully gapped superconductors, unconventional superconductors with point or line nodes in their order parameter can also exhibit nontrivial topological characteristics. This article reviews recent progress in the theoretical understanding of nodal topological superconductors, with a focus on Weyl and noncentrosymmetric superconductors and their protected surface states. Using selected examples, we review the bulk topological properties of these systems, study different types of topological surface states, and examine their unusual properties. Furthermore, we survey some candidate materials for topological superconductivity and discuss different experimental signatures of topological surface states. (topical review)

Using traps of terrestrial insects in culture of rheophilic fish fingerling

OpenAIRE

HERCIG, Daniel

2008-01-01

Food is one of the most important items in fish culture economy. Juvenile fish prove the fastest growth rates and that is the reason why their appropriate nourishment is so important. Surface drift of terrestrial insects provides an excellent food for rheophilic fish species . Reophilic fishes are able to utilise also plants and particularly algae too. Terrestrial insects can be attracted to water surface by various ways. Is it a light trap during the night. The installation of colour traps i...

Tightly confined atoms in optical dipole traps

International Nuclear Information System (INIS)

Schulz, M.

2002-12-01

trap depth. In a crossed beam geometry with red-detuned laser light, efficient transfer of atoms between the beams is observed. Optimum transfer occurs when the two beams cross at a radial offset, which can be qualitatively understood when the particle energy and geometrical properties of the two-beam trapping potential are considered. Numerical simulations reproduce the general features of the measured transfer efficiency vs. radial beam offset. Atoms have been radially confined in a blue-detuned hollow beam. This configuration is currently extended to a three-dimensionally confining blue-detuned dipole trap. For advanced laser cooling, state manipulation and spectroscopy, a double-diode laser system has been set up which is phase-locked with a difference frequency near 6.834 GHz to drive Raman transitions between the hyperfine-split ground states of Rb-87 atoms. Dark resonances with linewidths below 100-Hz have been observed in a buffer gas loaded rubidium vapour cell. (author)

Triplet Transport to and Trapping by Acceptor End Groups on Conjugated Polyfluorene Chains

Energy Technology Data Exchange (ETDEWEB)

Sreearunothai, P.; Miller, J.; Estrada, A.; Asaoka, S.; Kowalczyk, M.; Jang, S.; Cook, A.R.; Preses, J.M.

2011-08-31

Triplet excited states created in polyfluorene (pF) molecules having average lengths up to 170 repeat units were transported to and captured by trap groups at the ends in less {approx}40 ns. Almost all of the triplets attached to the chains reached the trap groups, ruling out the presence of substantial numbers of defects that prevent transport. The transport yields a diffusion coefficient D of at least 3 x 10{sup -4} cm{sup 2} s{sup -1}, which is 30 times typical molecular diffusion and close to a value for triplet transport reported by Keller (J. Am. Chem. Soc.2011, 133, 11289-11298). The triplet states were created in solution by pulse radiolysis; time resolution was limited by the rate of attachment of triplets to the pF chains. Naphthylimide (NI) or anthraquinone (AQ) groups attached to the ends of the chains acted as traps for the triplets, although AQ would not have been expected to serve as a trap on the basis of triplet energies of the separate molecules. The depths of the NI and AQ triplet traps were determined by intermolecular triplet transfer equilibria and temperature dependence. The trap depths are shallow, just a few times thermal energy for both, so a small fraction of the triplets reside in the pF chains in equilibrium with the end-trapped triplets. Trapping by AQ appears to arise from charge transfer interactions between the pF chains and the electron-accepting AQ groups. Absorption bands of the end-trapped triplet states are similar in peak wavelength (760 nm) and shape to the 760 nm bands of triplets in the pF chains but have reduced intensities. When an electron donor, N,N,N',N'-tetramethyl-p-phenylenediamine (TMPD), is added to the solution, it reacts with the end-trapped triplets to remove the 760 nm bands and to make the trapping irreversible. New bands created upon reaction with TMPD may be due to charge transfer states.

Intrinsic charge trapping in amorphous oxide films: status and challenges

Science.gov (United States)

Strand, Jack; Kaviani, Moloud; Gao, David; El-Sayed, Al-Moatasem; Afanas’ev, Valeri V.; Shluger, Alexander L.

2018-06-01

We review the current understanding of intrinsic electron and hole trapping in insulating amorphous oxide films on semiconductor and metal substrates. The experimental and theoretical evidences are provided for the existence of intrinsic deep electron and hole trap states stemming from the disorder of amorphous metal oxide networks. We start from presenting the results for amorphous (a) HfO2, chosen due to the availability of highest purity amorphous films, which is vital for studying their intrinsic electronic properties. Exhaustive photo-depopulation spectroscopy measurements and theoretical calculations using density functional theory shed light on the atomic nature of electronic gap states responsible for deep electron trapping observed in a-HfO2. We review theoretical methods used for creating models of amorphous structures and electronic structure calculations of amorphous oxides and outline some of the challenges in modeling defects in amorphous materials. We then discuss theoretical models of electron polarons and bi-polarons in a-HfO2 and demonstrate that these intrinsic states originate from low-coordinated ions and elongated metal-oxygen bonds in the amorphous oxide network. Similarly, holes can be captured at under-coordinated O sites. We then discuss electron and hole trapping in other amorphous oxides, such as a-SiO2, a-Al2O3, a-TiO2. We propose that the presence of low-coordinated ions in amorphous oxides with electron states of significant p and d character near the conduction band minimum can lead to electron trapping and that deep hole trapping should be common to all amorphous oxides. Finally, we demonstrate that bi-electron trapping in a-HfO2 and a-SiO2 weakens Hf(Si)–O bonds and significantly reduces barriers for forming Frenkel defects, neutral O vacancies and O2‑ ions in these materials. These results should be useful for better understanding of electronic properties and structural evolution of thin amorphous films under carrier injection

Charge trapping at organic/self-assembly molecule interfaces studied by electrical switching behaviour in a crosspoint structure

International Nuclear Information System (INIS)

Li Yun; Pan Lijia; Pu Lin; Shi Yi; Liu Chuan; Tsukagoshi, Kazuhito

2012-01-01

Charge trapping at organic/self-assembly molecule (SAM) interfaces is studied by the electrical switching behaviour in a crosspoint structure, where interfacial charge trapping tunes the potential barrier of the SAM layer. The sample with rubrene exhibits the write-once read-many-times memory effect, which is due to the interfacial charges trapped at deep states. On the other hand, the sample with 2-amino-4,5-dicyanoimidazole presents recyclable conduction transition, which results from the trapped charges distributed at shallow states. Moreover, the percentage of the charges trapped at shallow states can be estimated from electrical transition levels. (paper)

Charge trapping at organic/self-assembly molecule interfaces studied by electrical switching behaviour in a crosspoint structure

Science.gov (United States)

Li, Yun; Liu, Chuan; Pan, Lijia; Pu, Lin; Tsukagoshi, Kazuhito; Shi, Yi

2012-01-01

Charge trapping at organic/self-assembly molecule (SAM) interfaces is studied by the electrical switching behaviour in a crosspoint structure, where interfacial charge trapping tunes the potential barrier of the SAM layer. The sample with rubrene exhibits the write-once read-many-times memory effect, which is due to the interfacial charges trapped at deep states. On the other hand, the sample with 2-amino-4,5-dicyanoimidazole presents recyclable conduction transition, which results from the trapped charges distributed at shallow states. Moreover, the percentage of the charges trapped at shallow states can be estimated from electrical transition levels.

Biases in Drosophila melanogaster protein trap screens

Directory of Open Access Journals (Sweden)

Müller Ilka

2009-05-01

Full Text Available Abstract Background The ability to localise or follow endogenous proteins in real time in vivo is of tremendous utility for cell biology or systems biology studies. Protein trap screens utilise the random genomic insertion of a transposon-borne artificial reporter exon (e.g. encoding the green fluorescent protein, GFP into an intron of an endogenous gene to generate a fluorescent fusion protein. Despite recent efforts aimed at achieving comprehensive coverage of the genes encoded in the Drosophila genome, the repertoire of genes that yield protein traps is still small. Results We analysed the collection of available protein trap lines in Drosophila melanogaster and identified potential biases that are likely to restrict genome coverage in protein trap screens. The protein trap screens investigated here primarily used P-element vectors and thus exhibit some of the same positional biases associated with this transposon that are evident from the comprehensive Drosophila Gene Disruption Project. We further found that protein trap target genes usually exhibit broad and persistent expression during embryonic development, which is likely to facilitate better detection. In addition, we investigated the likely influence of the GFP exon on host protein structure and found that protein trap insertions have a significant bias for exon-exon boundaries that encode disordered protein regions. 38.8% of GFP insertions land in disordered protein regions compared with only 23.4% in the case of non-trapping P-element insertions landing in coding sequence introns (p -4. Interestingly, even in cases where protein domains are predicted, protein trap insertions frequently occur in regions encoding surface exposed areas that are likely to be functionally neutral. Considering the various biases observed, we predict that less than one third of intron-containing genes are likely to be amenable to trapping by the existing methods. Conclusion Our analyses suggest that the

Solvation of excess electrons trapped in charge pockets on molecular surfaces

Science.gov (United States)

Jalbout, Abraham F.

This work considers the ability of hydrogen fluoride (HF) to solvate excess electrons located on cyclic hydrocarbon surfaces. The principle applied involves the formation of systems in which excess electrons can be stabilized not only on concentrated molecular surface charge pockets but also by HF. Recent studies have shown that OH groups can form stable hydrogen-bonded networks on one side of a hydrocarbon surface (i.e. cyclohexane sheets), at the same time, the hydrogen atoms on the opposite side of this surface form a pocket of positive charge can attract the excess electron. This density can be further stabilized by the addition of an HF molecule that can form an 'anion with an internally solvated electron' (AISE) state. These systems are shown to be stable with respect to vertical electron detachment (VDE).

Photoionization of radiation-induced traps in quartz and alkali feldspars.

Science.gov (United States)

Hütt, G; Jaek, I; Vasilchenko, V

2001-01-01

For the optimization of luminescence dating and dosimetry techniques on the basis of the optically stimulated luminescence, the stimulation spectra of quartz and alkali feldspars were measured in the spectral region of 250-1100 nm using optically stimulated afterglow. Optically stimulated luminescence in all studied spectral regions is induced by the same kind of deep traps, that produce thermoluminescence in the regions of palaeodosimetric peaks for both minerals. The mechanism for photoionization of deep traps was proposed as being due to delocalization of the excited state of the corresponding lattice defects. The excited state overlaps the zone states; i.e. is situated in the conduction band. Because of the high quantum yield of deep electron trap ionization in the UV spectral region, the present aim was to study the possibility of using UV-stimulation for palaeodose reconstruction.

Photoionization of radiation-induced traps in quartz and alkali feldspars

International Nuclear Information System (INIS)

Huett, G.; Jaek, I.; Vasilchenko, V.

2001-01-01

For the optimization of luminescence dating and dosimetry techniques on the basis of the optically stimulated luminescence, the stimulation spectra of quartz and alkali feldspars were measured in the spectral region of 250-1100 nm using optically stimulated afterglow. Optically stimulated luminescence in all studied spectral regions is induced by the same kind of deep traps, that produce thermoluminescence in the regions of palaeodosimetric peaks for both minerals. The mechanism for photoionization of deep traps was proposed as being due to delocalization of the excited state of the corresponding lattice defects. The excited state overlaps the zone states; i.e. is situated in the conduction band. Because of the high quantum yield of deep electron trap ionization in the UV spectral region, the present aim was to study the possibility of using UV-stimulation for palaeodose reconstruction

Photoionization of radiation-induced traps in quartz and alkali feldspars

Energy Technology Data Exchange (ETDEWEB)

Huett, G. E-mail: hutt@pdos.gi.ee; Jaek, I.; Vasilchenko, V

2001-01-15

For the optimization of luminescence dating and dosimetry techniques on the basis of the optically stimulated luminescence, the stimulation spectra of quartz and alkali feldspars were measured in the spectral region of 250-1100 nm using optically stimulated afterglow. Optically stimulated luminescence in all studied spectral regions is induced by the same kind of deep traps, that produce thermoluminescence in the regions of palaeodosimetric peaks for both minerals. The mechanism for photoionization of deep traps was proposed as being due to delocalization of the excited state of the corresponding lattice defects. The excited state overlaps the zone states; i.e. is situated in the conduction band. Because of the high quantum yield of deep electron trap ionization in the UV spectral region, the present aim was to study the possibility of using UV-stimulation for palaeodose reconstruction.

Ion bombardment effect on surface state of metal

International Nuclear Information System (INIS)

Vaulin, E.P.; Georgieva, N.E.; Martynenko, T.P.

1990-01-01

The effect of slow argon ion bombardment on the surface microstructure of polycrystalline copper as well as the effect of surface state on sputtering of D-16 polycrystalline alloy are experimentally studied. Reduction of copper surface roughness is observed. It is shown that the D-16 alloy sputtering coefficient is sensitive to the surface state within the limits of the destructed surface layer

Vapor generation and atom traps: Atomic absorption spectrometry at the ng/L level

International Nuclear Information System (INIS)

Ataman, O. Yavuz

2008-01-01

Atom-trapping atomic absorption spectrometry is a technique that allows detection at the ng/L level for several analytes such as As, Se, Sb, Pb, Bi, Cd, In, Tl, Te, Sn and Hg. The principle involves generation of volatile species, usually hydrides, trapping these species on the surface of an atom trap held at an optimized temperature and, finally, revolatilizing the analyte species by rapid heating of the trap and transporting them in a carrier gas to a heated quartz tube, as commonly used with hydride generation AAS systems. A transient signal having, in most cases, a full width at half maximum of less than 1 s is obtained. The atom trap may be a quartz surface or a W-coil; the former is heated externally and the latter is heated resistively. Both collection and revolatilization temperatures are optimized. In some cases, the W-coil itself is used as an electrothermal atomizer and a heated quartz tube is then not needed. The evolution of these traps starts with the well-known Watling's slotted quartz tube (SQT), continues with atom trapping SQT and finally reaches the present traps mentioned above. The analytical figures of merit for these traps need to be standardized. Naturally, enhancement is on characteristic concentration, C 0 , where the change in characteristic mass, m 0 , can be related to trapping efficiency. Novel terms are suggested for E, enhancement factor; such as E max , maximum enhancement factor; E t , enhancement for 1.0 minute sampling and E v , enhancement for 1.0 mL of sample. These figures will allow easy comparison of results from different laboratories as well as different analytes and/or traps

Light trapping with plasmonic back contacts in thin-film silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Paetzold, Ulrich Wilhelm

2013-02-08

Trapping light in silicon solar cells is essential as it allows an increase in the absorption of incident sunlight in optically thin silicon absorber layers. This way, the costs of the solar cells can be reduced by lowering the material consumption and decreasing the physical constraints on the material quality. In this work, plasmonic light trapping with Ag back contacts in thin-film silicon solar cells is studied. Solar cell prototypes with plasmonic back contacts are presented along with optical simulations of these devices and general design considerations of plasmonic back contacts. Based on three-dimensional electromagnetic simulations, the conceptual design of plasmonic nanostructures on Ag back contacts in thin-film silicon solar cells is studied in this work. Optimizations of the nanostructures regarding their ability to scatter incident light at low optical losses into large angles in the silicon absorber layers of the thin-film silicon solar cells are presented. Geometrical parameters as well as the embedding dielectric layer stack of the nanostructures on Ag layers are varied. Periodic as well as isolated hemispherical Ag nanostructures of dimensions above 200 nm are found to scatter incident light at high efficiencies and low optical losses. Hence, these nanostructures are of interest for light trapping in solar cells. In contrast, small Ag nanostructures of dimension below 100 nm are found to induce optical losses. At the surface of randomly textured Ag back contacts small Ag nanostructures exist which induce optical losses. In this work, the relevance of these localized plasmon induced optical losses as well as optical losses caused by propagating plasmons are investigated with regard to the reflectance of the textured back contacts. In state-of-the-art solar cells, the plasmon-induced optical losses are shifted out of the relevant wavelength range by incorporating a ZnO:Al interlayer of low refractive index at the back contact. The additional but

A small trapped-ion quantum register

International Nuclear Information System (INIS)

Kielpinski, D

2003-01-01

We review experiments performed at the National Institute of Standards and Technology on entanglement, Bell's inequality and decoherence-free subspaces (DFSs) in a quantum register of trapped 9 Be + ions. The group of Dr David Wineland has demonstrated entanglement of up to four ions using the technique of Molmer and Sorensen. This method produces the state (|↓↓> + |↑↑>)/√2 for two ions and the state (|↓↓↓↓> + |↑↑↑↑>)/√2 for four ions. The entanglement was generated deterministically in each shot of the experiment. Measurements on the two-ion entangled state violate Bell's inequality at the 8σ level. Because of the high detector efficiency of the apparatus, this experiment closes the detector loophole for Bell's inequality measurements for the first time. This measurement is also the first violation of Bell's inequality by massive particles that does not implicitly assume results from quantum mechanics. The group also demonstrated measurement of an interferometric phase with precision better than the shot-noise limit using a two-ion entangled state. A large-scale version of this scheme could improve the signal-to-noise ratio of atomic clocks by orders of magnitude. Further experiments demonstrated reversible encoding of an arbitrary qubit, originally contained in one ion, into a DFS of two ions. The DFS-encoded qubit resists applied collective dephasing noise and retains coherence under ambient conditions 3.6 times longer than does an unencoded qubit. The encoding method, which uses single-ion gates and the two-ion entangling gate, demonstrates all the elements required for two-qubit universal quantum logic. Finally, we describe an architecture for a large-scale ion trap quantum computer. By performing logic gates on small numbers of ions trapped in separate regions of the array, we take advantage of existing techniques for manipulating small trapped-ion quantum registers while enabling massively parallel gate operation. Encoding the

Photoionization and cold collision studies using trapped atoms

International Nuclear Information System (INIS)

Gould, P.L.

1996-01-01

The authors have used laser cooling and trapping techniques to investigate photoionization and cold collisions. With laser-trapped Rb, they have measured the photoionization cross section from the first excited (5P) level by observing the photoionization-induced loss rate of neutral atoms from the trap. This technique has the advantage that it directly measures the photoionization rate per atom. Knowing the ionizing laser intensity and the excited-state fraction, the measured loss rate gives the absolute cross section. Using this technique, the Rb 5P photoionization cross section at ∼400 nm has been determined with an uncertainty of 9%. The authors are currently attempting to extend this method to the 5D level. Using time-ordered pulses of diode-laser light (similar to the STIRAP technique), they have performed very efficient two-photon excitation of trapped Rb atoms to 5D. Finally, they will present results from a recent collaboration which combines measurements form conventional molecular spectroscopy (single photon and double resonance) with photoassociation collisions of ultracold Na atoms to yield a precise (≤1 ppm) value for the dissociation energy of the X Σ g+ ground state of the Na 2 molecule

Surface-electronic-state effects in electron emission from the Be(0001) surface

International Nuclear Information System (INIS)

Archubi, C. D.; Gravielle, M. S.; Silkin, V. M.

2011-01-01

We study the electron emission produced by swift protons impinging grazingly on a Be(0001) surface. The process is described within a collisional formalism using the band-structure-based (BSB) approximation to represent the electron-surface interaction. The BSB model provides an accurate description of the electronic band structure of the solid and the surface-induced potential. Within this approach we derive both bulk and surface electronic states, with these latter characterized by a strong localization at the crystal surface. We found that such surface electronic states play an important role in double-differential energy- and angle-resolved electron emission probabilities, producing noticeable structures in the electron emission spectra.

Surface-electronic-state effects in electron emission from the Be(0001) surface

Energy Technology Data Exchange (ETDEWEB)

Archubi, C. D. [Instituto de Astronomia y Fisica del Espacio, casilla de correo 67, sucursal 28, C1428EGA, Buenos Aires (Argentina); Gravielle, M. S. [Instituto de Astronomia y Fisica del Espacio, casilla de correo 67, sucursal 28, C1428EGA, Buenos Aires (Argentina); Departamento de Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Buenos Aires (Argentina); Silkin, V. M. [Donostia International Physics Center, E-20018 San Sebastian (Spain); Departamento de Fisica de Materiales, Facultad de Ciencias Quimicas, Universidad del Pais Vasco, Apartado 1072, E-20080 San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, E-48011 Bilbao (Spain)

2011-07-15

We study the electron emission produced by swift protons impinging grazingly on a Be(0001) surface. The process is described within a collisional formalism using the band-structure-based (BSB) approximation to represent the electron-surface interaction. The BSB model provides an accurate description of the electronic band structure of the solid and the surface-induced potential. Within this approach we derive both bulk and surface electronic states, with these latter characterized by a strong localization at the crystal surface. We found that such surface electronic states play an important role in double-differential energy- and angle-resolved electron emission probabilities, producing noticeable structures in the electron emission spectra.

Nested Penning Trap as a Source of Singly Charged Ions

International Nuclear Information System (INIS)

Ordonez, C.A.

2003-01-01

In the work reported, the possibility of using a nested Penning trap as a high purity source of low-charge-state ions is studied. For the configuration considered, a relatively dense ion plasma is confined by a three-dimensional electric potential well. The three-dimensional well is produced by the electric field generated by both the trap electrodes and a trapped electron plasma. The ion and electron plasmas are each considered to have Maxwellian velocity distributions. However, it is shown that the electron plasma must have a temperature that is higher than that of the ion plasma when the ions have low charge states. The work reported includes a self-consistent prediction of a possible plasma equilibrium

Optical system for trapping particles in air.

Science.gov (United States)

Kampmann, R; Chall, A K; Kleindienst, R; Sinzinger, S

2014-02-01

An innovative optical system for trapping particles in air is presented. We demonstrate an optical system specifically optimized for high precision positioning of objects with a size of several micrometers within a nanopositioning and nanomeasuring machine (NPMM). Based on a specification sheet, an initial system design was calculated and optimized in an iterative design process. By combining optical design software with optical force simulation tools, a highly efficient optical system was developed. Both components of the system, which include a refractive double axicon and a parabolic ring mirror, were fabricated by ultra-precision turning. The characterization of the optical elements and the whole system, especially the force simulations based on caustic measurements, represent an important interim result for the subsequently performed trapping experiments. The caustic of the trapping beam produced by the system was visualized with the help of image processing techniques. Finally, we demonstrated the unique efficiency of the configuration by reproducibly trapping fused silica spheres with a diameter of 10 μm at a distance of 2.05 mm from the final optical surface.

Effects of temperature and surface orientation on migration behaviours of helium atoms near tungsten surfaces

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaoshuang; Wu, Zhangwen; Hou, Qing, E-mail: qhou@scu.edu.cn

2015-10-15

Molecular dynamics simulations were performed to study the dependence of migration behaviours of single helium atoms near tungsten surfaces on the surface orientation and temperature. For W{100} and W{110} surfaces, He atoms can quickly escape out near the surface without accumulation even at a temperature of 400 K. The behaviours of helium atoms can be well-described by the theory of continuous diffusion of particles in a semi-infinite medium. For a W{111} surface, the situation is complex. Different types of trap mutations occur within the neighbouring region of the W{111} surface. The trap mutations hinder the escape of He atoms, resulting in their accumulation. The probability of a He atom escaping into vacuum from a trap mutation depends on the type of the trap mutation, and the occurrence probabilities of the different types of trap mutations are dependent on the temperature. This finding suggests that the escape rate of He atoms on the W{111} surface does not show a monotonic dependence on temperature. For instance, the escape rate at T = 1500 K is lower than the rate at T = 1100 K. Our results are useful for understanding the structural evolution and He release on tungsten surfaces and for designing models in other simulation methods beyond molecular dynamics.

Coherent structural trapping through wave packet dispersion during photoinduced spin state switching

DEFF Research Database (Denmark)

Lemke, Henrik T.; Kjær, Kasper Skov; Hartsock, Robert

2017-01-01

The description of ultrafast nonadiabatic chemical dynamics during molecular photo-transformations remains challenging because electronic and nuclear configurations impact each other and cannot be treated independently. Here we gain experimental insights, beyond the Born-Oppenheimer approximation...... is distinguished from the structural trapping dynamics, which launches a coherent oscillating wave packet (265 fs period), clearly identified as molecular breathing. Throughout the structural trapping, the dispersion of the wave packet along the reaction coordinate reveals details of intramolecular vibronic...

Positioning of the sensor cell on the sensing area using cell trapping pattern in incubation type planar patch clamp biosensor.

Science.gov (United States)

Wang, Zhi-Hong; Takada, Noriko; Uno, Hidetaka; Ishizuka, Toru; Yawo, Hiromu; Urisu, Tsuneo

2012-08-01

Positioning the sensor cell on the micropore of the sensor chip and keeping it there during incubation are problematic tasks for incubation type planar patch clamp biosensors. To solve these problems, we formed on the Si sensor chip's surface a cell trapping pattern consisting of a lattice pattern with a round area 5 μm deep and with the micropore at the center of the round area. The surface of the sensor chip was coated with extra cellular matrix collagen IV, and HEK293 cells on which a chimera molecule of channel-rhodopsin-wide-receiver (ChR-WR) was expressed, were then seeded. We examined the effects of this cell trapping pattern on the biosensor's operation. In the case of a flat sensor chip without a cell trapping pattern, it took several days before the sensor cell covered the micropore and formed an almost confluent state. As a result, multi-cell layers easily formed and made channel current measurements impossible. On the other hand, the sensor chip with cell trapping pattern easily trapped cells in the round area, and formed the colony consisted of the cell monolayer covering the micropore. A laser (473 nm wavelength) induced channel current was observed from the whole cell arrangement formed using the nystatin perforation technique. The observed channel current characteristics matched measurements made by using a pipette patch clamp. Copyright © 2012 Elsevier B.V. All rights reserved.

Effect of engine-based thermal aging on surface morphology and performance of Lean NOx Traps

International Nuclear Information System (INIS)

Toops, Todd J.; Bunting, Bruce G.; Nguyen, Ke; Gopinath, Ajit

2007-01-01

A small single-cylinder diesel engine is used to thermally age model (Pt + Rh/Ba/γ-Al 2 O 3 ) lean NO x traps (LNTs) under lean/rich cycling at target temperatures of 600 C, 700 C, and 800 C. During an aging cycle, fuel is injected into the exhaust to achieve reproducible exotherms under lean and rich conditions with the average temperature approximating the target temperature. Aging is performed until the cycle-average NO x conversion measured at 400 C is approximately constant. Engine-based NO x conversion decreased by 42% after 60 cycles at 600 C, 36% after 76 cycles at 700 C and 57% after 46 cycles at 800 C. The catalyst samples were removed and characterized by XRD and using a microreactor that allowed controlled measurements of surface area, precious metal size, NO x storage, and reaction rates. Three aging mechanisms responsible for the deactivation of LNTs have been identified: (1) loss of dispersion of the precious metals, (2) phase transitions in the washcoat materials, and (3) loss of surface area of the storage component and support. These three mechanisms are accelerated when the aging temperature exceeds 850 C - the γ to (delta) transition temperature of Al 2 O 3 . Normalization of rates of NO reacted at 400 C to total surface area demonstrates the biggest impact on performance stems from surface area losses rather than from precious metal sintering. (author)

Extraction of sub-gap density of states via capacitance-voltage measurement for the erasing process in a TFT charge-trapping memory

Science.gov (United States)

Chiang, Yen-Chang; Hsiao, Yang-Hsuan; Li, Jeng-Ting; Chen, Jen-Sue

2018-02-01

Charge-trapping memories (CTMs) based on zinc tin oxide (ZTO) semiconductor thin-film transistors (TFTs) can be programmed by a positive gate voltage and erased by a negative gate voltage in conjunction with light illumination. To understand the mechanism involved, the sub-gap density of states associated with ionized oxygen vacancies in the ZTO active layer is extracted from optical response capacitance-voltage (C-V) measurements. The corresponding energy states of ionized oxygen vacancies are observed below the conduction band minimum at approximately 0.5-1.0 eV. From a comparison of the fitted oxygen vacancy concentration in the CTM-TFT after the light-bias erasing operation, it is found that the pristine-erased device contains more oxygen vacancies than the program-erased device because the trapped electrons in the programmed device are pulled into the active layer and neutralized by the oxygen vacancies that are present there.

A versatile electrostatic trap with open optical access

Science.gov (United States)

Li, Sheng-Qiang; Yin, Jian-Ping

2018-04-01

A versatile electrostatic trap with open optical access for cold polar molecules in weak-field-seeking state is proposed in this paper. The trap is composed of a pair of disk electrodes and a hexapole. With the help of a finite element software, the spatial distribution of the electrostatic field is calculated. The results indicate that a three-dimensional closed electrostatic trap is formed. Taking ND3 molecules as an example, the dynamic process of loading and trapping is simulated. The results show that when the velocity of the molecular beam is 10 m/s and the loading time is 0.9964 ms, the maximum loading efficiency reaches 94.25% and the temperature of the trapped molecules reaches about 30.3 mK. A single well can be split into two wells, which is of significant importance to the precision measurement and interference of matter waves. This scheme, in addition, can be further miniaturized to construct one-dimensional, two-dimensional, and three-dimensional spatial electrostatic lattices.

Evidences of trapping in tungsten and implications for plasma-facing components

Science.gov (United States)

Longhurst, G. R.; Anderl, R. A.; Holland, D. F.

Trapping effects that include significant delays in permeation saturation, abrupt changes in permeation rate associated with temperature changes, and larger than expected inventories of hydrogen isotopes in the material, were seen in implantation-driven permeation experiments using 25- and 50-micron thick tungsten foils at temperatures of 638 to 825 K. Computer models that simulate permeation transients reproduce the steady-state permeation and reemission behavior of these experiments with expected values of material parameters. However, the transient time characteristics were not successfully simulated without the assumption of traps of substantial trap energy and concentration. An analytical model based on the assumptions of thermodynamic equilibrium between trapped hydrogen atoms and a comparatively low mobile atom concentration successfully accounts for the observed behavior. Using steady-state and transient permeation data from experiments at different temperatures, the effective trap binding energy may be inferred. We analyze a tungsten coated divertor plate design representative of those proposed for ITER and ARIES and consider the implications for tritium permeation and retention if the same trapping we observed was present in that tungsten. Inventory increases of several orders of magnitude may result.

Trapped waves on the mid-latitude β-plane

Science.gov (United States)

Paldor, Nathan; Sigalov, Andrey

2008-08-01

A new type of approximate solutions of the Linearized Shallow Water Equations (LSWE) on the mid-latitude β-plane, zonally propagating trapped waves with Airy-like latitude-dependent amplitude, is constructed in this work, for sufficiently small radius of deformation. In contrast to harmonic Poincare and Rossby waves, these newly found trapped waves vanish fast in the positive half-axis, and their zonal phase speed is larger than that of the corresponding harmonic waves for sufficiently large meridional domains. Our analysis implies that due to the smaller radius of deformation in the ocean compared with that in the atmosphere, the trapped waves are relevant to observations in the ocean whereas harmonic waves typify atmospheric observations. The increase in the zonal phase speed of trapped Rossby waves compared with that of harmonic ones is consistent with recent observations that showed that Sea Surface Height features propagated westwards faster than the phase speed of harmonic Rossby waves.

Shrew trap efficiency

DEFF Research Database (Denmark)

Gambalemoke, Mbalitini; Mukinzi, Itoka; Amundala, Drazo

2008-01-01

We investigated the efficiency of four trap types (pitfall, Sherman LFA, Victor snap and Museum Special snap traps) to capture shrews. This experiment was conducted in five inter-riverine forest blocks in the region of Kisangani. The total trapping effort was 6,300, 9,240, 5,280 and 5,460 trap......, our results indicate that pitfall traps are the most efficient for capturing shrews: not only do they have a higher efficiency (yield), but the taxonomic diversity of shrews is also higher when pitfall traps are used....

Theoretical examination of the trapping of ion-implanted hydrogen in metals

International Nuclear Information System (INIS)

Myers, S.M.; Nordlander, P.; Besenbacher, F.; Norskov, J.K.

1986-01-01

Theoretical analysis of the defect trapping of ion-implanted hydrogen in metals has been extended in two respects. A new transport formalism has been developed which takes account not only of the diffusion, trapping, and surface release of the hydrogen, which were included in earlier treatments, but also the diffusion, recombination, agglomeration, and surface annihilation of the vacancy and interstitial traps. In addition, effective-medium theory has been used to examine multiple hydrogen occupancy of the vacancy, and, for the fcc structure, appreciable binding enthalpies relative to the solution site have been found for occupancies of up to six. These extensions have been employed to model the depth distribution of ion-implanted hydrogen in Ni and Al during linear ramping of temperature, and the results have been used to interpret previously published data from these metals. The agreement between theory and experiment is good for both systems. In the case of Ni, the two experimentally observed hydrogen-release stages are both accounted for in terms of trapping at vacancies with a binding enthalpy that depends upon occupancy in accord with effective-medium theory

Quantum beats from the coherent interaction of hole states with surface state in near-surface quantum well

Energy Technology Data Exchange (ETDEWEB)

Khan, Salahuddin; Jayabalan, J., E-mail: jjaya@rrcat.gov.in; Chari, Rama; Pal, Suparna [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Porwal, Sanjay; Sharma, Tarun Kumar; Oak, S. M. [Semiconductor Physics and Devices Lab., Solid State Laser Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

2014-08-18

We report tunneling assisted beating of carriers in a near-surface single GaAsP/AlGaAs quantum well using transient reflectivity measurement. The observed damped oscillating signal has a period of 120 ± 6 fs which corresponds to the energy difference between lh1 and hh2 hole states in the quantum well. Comparing the transient reflectivity signal at different photon energies and with a buried quantum well sample, we show that the beating is caused by the coherent coupling between surface state and the hole states (lh1 and hh2) in the near-surface quantum well. The dependence of decay of coherence of these tunneling carriers on the excitation fluence is also reported. This observation on the coherent tunneling of carrier is important for future quantum device applications.

Quantum beats from the coherent interaction of hole states with surface state in near-surface quantum well

International Nuclear Information System (INIS)

Khan, Salahuddin; Jayabalan, J.; Chari, Rama; Pal, Suparna; Porwal, Sanjay; Sharma, Tarun Kumar; Oak, S. M.

2014-01-01

We report tunneling assisted beating of carriers in a near-surface single GaAsP/AlGaAs quantum well using transient reflectivity measurement. The observed damped oscillating signal has a period of 120 ± 6 fs which corresponds to the energy difference between lh1 and hh2 hole states in the quantum well. Comparing the transient reflectivity signal at different photon energies and with a buried quantum well sample, we show that the beating is caused by the coherent coupling between surface state and the hole states (lh1 and hh2) in the near-surface quantum well. The dependence of decay of coherence of these tunneling carriers on the excitation fluence is also reported. This observation on the coherent tunneling of carrier is important for future quantum device applications.

Digital quantum simulation, Schrödinger cat state spectroscopy and setting up a linear ion trap

International Nuclear Information System (INIS)

Hempel, C.

2014-01-01

This PhD thesis reports on two experiments in the field of quantum information processing using trapped calcium ions. In addition, the text covers the setup and characterization of a new linear Paul trap accompanied by a novel implementation of single-ion addressing using an acousto-optic deflector. The first of the two experiments is concerned with the proof-of-principle implementation of digital quantum simulations using up to 6 ions and 100 gate operations. It investigates the scaling behavior of simulations of elementary models of magnetism in terms of the number of involved spins and the complexity of their mutual interactions. The second experiment introduces the application of a Schroedinger cat state in the indirect detection of photon scattering events on a broad electronic transition. The method is shown to have a sensitivity down to the single photon level in a proof-of-principle demonstration using a mixed-isotope crystal of 40Ca+ and 44Ca+. A brief outlook towards future experiments and extensions of the experimental setup concludes the manuscript.(author) [de

Scaling Trapped Ion Quantum Computers Using Fast Gates and Microtraps

Science.gov (United States)

Ratcliffe, Alexander K.; Taylor, Richard L.; Hope, Joseph J.; Carvalho, André R. R.

2018-06-01

Most attempts to produce a scalable quantum information processing platform based on ion traps have focused on the shuttling of ions in segmented traps. We show that an architecture based on an array of microtraps with fast gates will outperform architectures based on ion shuttling. This system requires higher power lasers but does not require the manipulation of potentials or shuttling of ions. This improves optical access, reduces the complexity of the trap, and reduces the number of conductive surfaces close to the ions. The use of fast gates also removes limitations on the gate time. Error rates of 10-5 are shown to be possible with 250 mW laser power and a trap separation of 100 μ m . The performance of the gates is shown to be robust to the limitations in the laser repetition rate and the presence of many ions in the trap array.

The spatial relation between the event horizon and trapping horizon

International Nuclear Information System (INIS)

Nielsen, Alex B

2010-01-01

The relation between event horizons and trapping horizons is investigated in a number of different situations with emphasis on their role in thermodynamics. A notion of constant change is introduced that in certain situations allows the location of the event horizon to be found locally. When the black hole is accreting matter the difference in area between the two different horizons can be many orders of magnitude larger than the Planck area. When the black hole is evaporating, the difference is small on the Planck scale. A model is introduced that shows how trapping horizons can be expected to appear outside the event horizon before the black hole starts to evaporate. Finally, a modified definition is introduced to invariantly define the location of the trapping horizon under a conformal transformation. In this case the trapping horizon is not always a marginally outer trapped surface.

Comparative kinematical analyses of Venus flytrap (Dionaea muscipula snap traps

Directory of Open Access Journals (Sweden)

Simon Poppinga

2016-05-01

Full Text Available Although the Venus flytrap (Dionaea muscipula can be considered as one of the most extensively investigated carnivorous plants, knowledge is still scarce about diversity of the snap-trap motion, the functionality of snap traps under varying environmental conditions, and their opening motion. By conducting simple snap-trap closure experiments in air and under water, we present striking evidence that adult Dionaea snaps similarly fast in aerial and submersed states and, hence, is potentially able to gain nutrients from fast aquatic prey during seasonal inundation. We reveal three snapping modes of adult traps, all incorporating snap buckling, and show that millimeter-sized, much slower seedling traps do not yet incorporate such elastic instabilities. Moreover, opening kinematics of young and adult Dionaea snap traps reveal that reverse snap buckling is not performed, corroborating the assumption that growth takes place on certain trap lobe regions. Our findings are discussed in an evolutionary, biomechanical, functional–morphological and biomimetic context.

MOS Capacitance—Voltage Characteristics II. Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations

International Nuclear Information System (INIS)

Jie Binbin; Sah Chihtang

2011-01-01

Low-frequency and high-frequency Capacitance—Voltage (C—V) curves of Metal—Oxide—Semiconductor Capacitors (MOSC), including electron and hole trapping at the dopant donor and acceptor impurities, are presented to illustrate giant trapping capacitances, from > 0.01C OX to > 10C OX . Five device and materials parameters are varied for fundamental trapping parameter characterization, and electrical and optical signal processing applications. Parameters include spatially constant concentration of the dopant-donor-impurity electron trap, N DD , the ground state electron trapping energy level depth measured from the conduction band edge, E C –E D , the degeneracy of the trapped electron at the ground state, g D , the device temperature, T, and the gate oxide thickness, x OX . (invited papers)

Microwave quantum logic gates for trapped ions.

Science.gov (United States)

Ospelkaus, C; Warring, U; Colombe, Y; Brown, K R; Amini, J M; Leibfried, D; Wineland, D J

2011-08-10

Control over physical systems at the quantum level is important in fields as diverse as metrology, information processing, simulation and chemistry. For trapped atomic ions, the quantized motional and internal degrees of freedom can be coherently manipulated with laser light. Similar control is difficult to achieve with radio-frequency or microwave radiation: the essential coupling between internal degrees of freedom and motion requires significant field changes over the extent of the atoms' motion, but such changes are negligible at these frequencies for freely propagating fields. An exception is in the near field of microwave currents in structures smaller than the free-space wavelength, where stronger gradients can be generated. Here we first manipulate coherently (on timescales of 20 nanoseconds) the internal quantum states of ions held in a microfabricated trap. The controlling magnetic fields are generated by microwave currents in electrodes that are integrated into the trap structure. We also generate entanglement between the internal degrees of freedom of two atoms with a gate operation suitable for general quantum computation; the entangled state has a fidelity of 0.76(3), where the uncertainty denotes standard error of the mean. Our approach, which involves integrating the quantum control mechanism into the trapping device in a scalable manner, could be applied to quantum information processing, simulation and spectroscopy.

Development of spruce bark beetle population dynamics in nature reserve Fabova hola between 2006 and 2009 on the basis of trapping pheromone traps

International Nuclear Information System (INIS)

Mezei, P.

2010-01-01

Wind calamity in a volume of approximately 7600 m 3 of wood took place in nature reserve (NR) Fabova hola in November 2004. Another calamity of approximately the same scale (7600 m 3 ) occurred in a storm from 23 to 24 August 2007. Then a bark beetle gradation began in NR. The aim of this work is to evaluate development of beetle populations on the basis of trapping into pheromone traps in NR Fabova hola and in its protection zone made in the years 2006 to 2009 focusing on the spruce bark beetle (Ips typographus) and on comparison of average year-round trapping in three different groups of traps depending on their position - in the calamity of 2004, in recently opened site wall (the violated site wall), and the wind unspoiled site wall (while serving as a control surface). Obtained results are discussed.

Construction of a single atom trap for quantum information protocols

Science.gov (United States)

Shea, Margaret E.; Baker, Paul M.; Gauthier, Daniel J.; Duke Physics Department Team

2016-05-01

The field of quantum information science addresses outstanding problems such as achieving fundamentally secure communication and solving computationally hard problems. Great progress has been made in the field, particularly using photons coupled to ions and super conducting qubits. Neutral atoms are also interesting for these applications and though the technology for control of neutrals lags behind that of trapped ions, they offer some key advantages: primarily coupling to optical frequencies closer to the telecom band than trapped ions or superconducting qubits. Here we report progress on constructing a single atom trap for 87 Rb. This system is a promising platform for studying the technical problems facing neutral atom quantum computing. For example, most protocols destroy the trap when reading out the neutral atom's state; we will investigate an alternative non-destructive state detection scheme. We detail the experimental systems involved and the challenges addressed in trapping a single atom. All of our hardware components are off the shelf and relatively inexpensive. Unlike many other systems, we place a high numerical aperture lens inside our vacuum system to increase photon collection efficiency. We gratefully acknowledge the financial support of the ARO through Grant # W911NF1520047.

Vapor generation and atom traps: Atomic absorption spectrometry at the ng/L level

Energy Technology Data Exchange (ETDEWEB)

Ataman, O. Yavuz [Department of Chemistry, Middle East Technical University, 06531 Ankara (Turkey)], E-mail: ataman@metu.edu.tr

2008-08-15

Atom-trapping atomic absorption spectrometry is a technique that allows detection at the ng/L level for several analytes such as As, Se, Sb, Pb, Bi, Cd, In, Tl, Te, Sn and Hg. The principle involves generation of volatile species, usually hydrides, trapping these species on the surface of an atom trap held at an optimized temperature and, finally, revolatilizing the analyte species by rapid heating of the trap and transporting them in a carrier gas to a heated quartz tube, as commonly used with hydride generation AAS systems. A transient signal having, in most cases, a full width at half maximum of less than 1 s is obtained. The atom trap may be a quartz surface or a W-coil; the former is heated externally and the latter is heated resistively. Both collection and revolatilization temperatures are optimized. In some cases, the W-coil itself is used as an electrothermal atomizer and a heated quartz tube is then not needed. The evolution of these traps starts with the well-known Watling's slotted quartz tube (SQT), continues with atom trapping SQT and finally reaches the present traps mentioned above. The analytical figures of merit for these traps need to be standardized. Naturally, enhancement is on characteristic concentration, C{sub 0}, where the change in characteristic mass, m{sub 0}, can be related to trapping efficiency. Novel terms are suggested for E, enhancement factor; such as E{sub max}, maximum enhancement factor; E{sub t}, enhancement for 1.0 minute sampling and E{sub v}, enhancement for 1.0 mL of sample. These figures will allow easy comparison of results from different laboratories as well as different analytes and/or traps.

Magnetic traps with a sperical separatrix: Tornado traps

International Nuclear Information System (INIS)

Peregood, B.P.; Lehnert, B.

1979-11-01

A review is given on the features of magnetic traps with a spherical separatrix, with special emphesis on Tornado spiral coil configurations. The confinement and heating of static plasmas in Tornado traps is treated, including the topology of the magnetic field structure, the magneto-mechanical properties of the magnetic coil system, as well as the particle orbits and plasma behaviour in these traps. In additio, the mode of rotating plasma operation by crossed electric and magnetic fields is being described. The results of experiments on static and rotating plasmas are summarized, and conclusions are drawn about future possibilities of Tornado traps for the creation and containment of hot plasmas. (author)

Magnetic traps with a spherical separatrix: Tornado traps

International Nuclear Information System (INIS)

Peregood, B.P.; Lehnert, B.

1981-01-01

A review is given on the features of magnetic traps with a spherical separatrix, with special emphasis on Tornado spiral coil configurations. The confinement and heating of static plasms in Tornado traps is treated, including the topology of the magnetic field structure, the magneto-mechanical properties of the magnetic coil system, as well as the particle orbits and plasma behaviour in these traps. In addition, the mode of rotating plasma operation by crossed electric and magnetic fields is described. The results of experiments on static and rotating plasmas are summarized, and conclusions are drawn about future possibilities of Tornado traps in the creation and containment of hot plasmas. (orig.)

Surface states and spectra

International Nuclear Information System (INIS)

Jaksic, V.; Last, Y.; California Inst. of Tech., Pasadena, CA

2001-01-01

Let Z + d+1 =Z d x Z + , let H 0 be the discrete Laplacian on the Hilbert space l 2 (Z + d+1 ) with a Dirichlet boundary condition, and let V be a potential supported on the boundary ∂Z + d+1 . We introduce the notions of surface states and surface spectrum of the operator H=H 0 +V and explore their properties. Our main result is that if the potential V is random and if the disorder is either large or small enough, then in dimension two H has no surface spectrum on σ(H 0 ) with probability one. To prove this result we combine Aizenman-Molchanov theory with techniques of scattering theory. (orig.)

Magnetic trapping of Rydberg atoms

NARCIS (Netherlands)

Niestadt, D.; Naber, J.; Kokkelmans, S.J.J.M.F.; Spreeuw, R.J.C.

2016-01-01

Magnetic trapping is a well-established technique for ground state atoms. We seek to extend this concept to Rydberg atoms. Rydberg atoms are important for current visions of quantum simulators that will be used in the near future to simulate and analyse quantum problems. Current efforts in Amsterdam

50 CFR 697.19 - Trap limits and trap tag requirements for vessels fishing with lobster traps.

Science.gov (United States)

2010-10-01

... vessels fishing with lobster traps. 697.19 Section 697.19 Wildlife and Fisheries FISHERY CONSERVATION AND... requirements for vessels fishing with lobster traps. (a) Trap limits for vessels fishing or authorized to fish... management area designation certificate or valid limited access American lobster permit specifying one or...

On surface states and star-subalgebras in string field theory

Energy Technology Data Exchange (ETDEWEB)

Fuchs, Ehud [Max Planck Insitut fuer Gravitationsphysik, Albert Einstein Institut, 14476 Golm (Germany); Kroyter, Michael [School of Physics and Astronomy, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Ramat Aviv, 69978 (Israel)]. E-mail: mikroyt@post.tau.ac.il

2004-10-01

We elaborate on the relations between surface states and squeezed states. First, we investigate two different criteria for determining whether a matter sector squeezed state is also a surface state and show that the two criteria are equivalent. Then, we derive similar criteria for the ghost sector. Next, we refine the criterion for determining whether a surface state is in H{sub k}{sup 2}, the subalgebra of squeezed states obeying [S,K{sub 1}{sup 2}]=0. This enables us to find all the surface states of the H{sub k}{sup 2} subalgebra, and show that it consists only of wedge states and (hybrid) butterflies. Finally, we investigate generalizations of this criterion and find an infinite family of surface states subalgebras, whose surfaces are described using a 'generalized Schwarz-Christoffel' mapping. (author)

Resonant quantum transitions in trapped antihydrogen atoms.

Science.gov (United States)

Amole, C; Ashkezari, M D; Baquero-Ruiz, M; Bertsche, W; Bowe, P D; Butler, E; Capra, A; Cesar, C L; Charlton, M; Deller, A; Donnan, P H; Eriksson, S; Fajans, J; Friesen, T; Fujiwara, M C; Gill, D R; Gutierrez, A; Hangst, J S; Hardy, W N; Hayden, M E; Humphries, A J; Isaac, C A; Jonsell, S; Kurchaninov, L; Little, A; Madsen, N; McKenna, J T K; Menary, S; Napoli, S C; Nolan, P; Olchanski, K; Olin, A; Pusa, P; Rasmussen, C Ø; Robicheaux, F; Sarid, E; Shields, C R; Silveira, D M; Stracka, S; So, C; Thompson, R I; van der Werf, D P; Wurtele, J S

2012-03-07

The hydrogen atom is one of the most important and influential model systems in modern physics. Attempts to understand its spectrum are inextricably linked to the early history and development of quantum mechanics. The hydrogen atom's stature lies in its simplicity and in the accuracy with which its spectrum can be measured and compared to theory. Today its spectrum remains a valuable tool for determining the values of fundamental constants and for challenging the limits of modern physics, including the validity of quantum electrodynamics and--by comparison with measurements on its antimatter counterpart, antihydrogen--the validity of CPT (charge conjugation, parity and time reversal) symmetry. Here we report spectroscopy of a pure antimatter atom, demonstrating resonant quantum transitions in antihydrogen. We have manipulated the internal spin state of antihydrogen atoms so as to induce magnetic resonance transitions between hyperfine levels of the positronic ground state. We used resonant microwave radiation to flip the spin of the positron in antihydrogen atoms that were magnetically trapped in the ALPHA apparatus. The spin flip causes trapped anti-atoms to be ejected from the trap. We look for evidence of resonant interaction by comparing the survival rate of trapped atoms irradiated with microwaves on-resonance to that of atoms subjected to microwaves that are off-resonance. In one variant of the experiment, we detect 23 atoms that survive in 110 trapping attempts with microwaves off-resonance (0.21 per attempt), and only two atoms that survive in 103 attempts with microwaves on-resonance (0.02 per attempt). We also describe the direct detection of the annihilation of antihydrogen atoms ejected by the microwaves.

Laser Cooling and Trapping of Neutral Strontium for Spectroscopic Measurements of Casimir-Polder Potentials

Science.gov (United States)

Cook, Eryn C.

Casimir and Casimir-Polder effects are forces between electrically neutral bodies and particles in vacuum, arising entirely from quantum fluctuations. The modification to the vacuum electromagnetic-field modes imposed by the presence of any particle or surface can result in these mechanical forces, which are often the dominant interaction at small separations. These effects play an increasingly critical role in the operation of micro- and nano-mechanical systems as well as miniaturized atomic traps for precision sensors and quantum-information devices. Despite their fundamental importance, calculations present theoretical and numeric challenges, and precise atom-surface potential measurements are lacking in many geometric and distance regimes. The spectroscopic measurement of Casimir-Polder-induced energy level shifts in optical-lattice trapped atoms offers a new experimental method to probe atom-surface interactions. Strontium, the current front-runner among optical frequency metrology systems, has demonstrated characteristics ideal for such precision measurements. An alkaline earth atom possessing ultra-narrow intercombination transitions, strontium can be loaded into an optical lattice at the "magic" wavelength where the probe transition is unperturbed by the trap light. Translation of the lattice will permit controlled transport of tightly-confined atomic samples to well-calibrated atom-surface separations, while optical transition shifts serve as a direct probe of the Casimir-Polder potential. We have constructed a strontium magneto-optical trap (MOT) for future Casimir-Polder experiments. This thesis will describe the strontium apparatus, initial trap performance, and some details of the proposed measurement procedure.

On the mobility of delocalized and self-trapped positronium states in ionic crystals

CERN Document Server

Bondarev, I V

2003-01-01

The temperature dependence of the diffusivity is studied for delocalized and self-trapped positronium (Ps) atoms in ionic crystals. Detailed calculations taking into account low-temperature and inelastic scattering corrections and a Ps scattering form-factor have been performed for delocalized Ps. Low-temperature and inelastic corrections to the delocalized Ps diffusivity are shown to be essential below several tens of K, while the form-factor contribution is negligibly small up to thousand K. The mobility of self-trapped Ps is analyzed within the framework of a small polaron approach. The hopping contribution to the self-trapped Ps diffusivity is shown to be adiabatic in its physical nature. The tunnel contribution is in general not small and may turn out to be dominating even at very high temperatures. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

Flux Trapping Properties of Bulk HIGH-TC Superconductors in Static Field-Cooling Magnetization

Science.gov (United States)

Deng, Z.; Tsuzuki, K.; Miki, M.; Felder, B.; Hara, S.; Izumi, M.

2013-06-01

The trapping process and saturation effect of trapped magnetic flux of bulk high-temperature superconductors by static field-cooling magnetization (FCM) are reported in the paper. With a cryogenic Bell Hall sensor attached on the center of the bulk surface, the synchronous magnetic signals were recorded during the whole magnetization process. It enables us to know the flux trapping behavior since the removal of the excitation field, as well as the subsequent flux relaxation phenomenon and the flux dissipation in the quench process of the bulk sample. With the help of flux mapping techniques, the relationship between the trapped flux and the applied field was further investigated; the saturation effect of trapped flux was discussed by comparing the peak trapped field and total magnetic flux of the bulk sample. These studies are useful to understand the basic flux trapping properties of bulk superconductors.

Solution-Processed Organic and Halide Perovskite Transistors on Hydrophobic Surfaces.

Science.gov (United States)

Ward, Jeremy W; Smith, Hannah L; Zeidell, Andrew; Diemer, Peter J; Baker, Stephen R; Lee, Hyunsu; Payne, Marcia M; Anthony, John E; Guthold, Martin; Jurchescu, Oana D

2017-05-31

Solution-processable electronic devices are highly desirable due to their low cost and compatibility with flexible substrates. However, they are often challenging to fabricate due to the hydrophobic nature of the surfaces of the constituent layers. Here, we use a protein solution to modify the surface properties and to improve the wettability of the fluoropolymer dielectric Cytop. The engineered hydrophilic surface is successfully incorporated in bottom-gate solution-deposited organic field-effect transistors (OFETs) and hybrid organic-inorganic trihalide perovskite field-effect transistors (HTP-FETs) fabricated on flexible substrates. Our analysis of the density of trapping states at the semiconductor-dielectric interface suggests that the increase in the trap density as a result of the chemical treatment is minimal. As a result, the devices exhibit good charge carrier mobilities, near-zero threshold voltages, and low electrical hysteresis.

Protein unfolding with a steric trap.

Science.gov (United States)

Blois, Tracy M; Hong, Heedeok; Kim, Tae H; Bowie, James U

2009-10-07

The study of protein folding requires a method to drive unfolding, which is typically accomplished by altering solution conditions to favor the denatured state. This has the undesirable consequence that the molecular forces responsible for configuring the polypeptide chain are also changed. It would therefore be useful to develop methods that can drive unfolding without the need for destabilizing solvent conditions. Here we introduce a new method to accomplish this goal, which we call steric trapping. In the steric trap method, the target protein is labeled with two biotin tags placed close in space so that both biotin tags can only be bound by streptavidin when the protein unfolds. Thus, binding of the second streptavidin is energetically coupled to unfolding of the target protein. Testing the method on a model protein, dihydrofolate reductase (DHFR), we find that streptavidin binding can drive unfolding and that the apparent binding affinity reports on changes in DHFR stability. Finally, by employing the slow off-rate of wild-type streptavidin, we find that DHFR can be locked in the unfolded state. The steric trap method provides a simple method for studying aspects of protein folding and stability in native solvent conditions, could be used to specifically unfold selected domains, and could be applicable to membrane proteins.

Surface passivation of high-purity germanium gamma-ray detector

International Nuclear Information System (INIS)

Alexiev, D.; Butcher, K.S.A.; Edmondson, M.; Lawson, E.M.

1993-01-01

The experimental work consists of two parts. The first involves fabrication of hyper-pure germanium gamma ray detectors using standard surface treatment, chemical etchings and containment in a suitable cryostat. Then, after cooling the detectors to 77 K, γ-ray emissions from radioisotopes are resolved, resolution, depletion depth, V R versus I R characteristics and /N A -N D / of the germanium are measured. The second part of the work involves investigation of surface states in an effort to achieve long-term stability of operating characteristics. Several methods are used: plasma hydrogenation, a-Si and a-Ge pinch-off effect and simple oxidation. A-Ge and a-Si thicknesses were measured using Rutherford backscattering techniques; surface states were measured with deep level transient spectroscopy and diode reverse current versus reverse voltage plots. Some scanning electron microscope measurements were used in determining major film contaminants during backscattering of a-Si and a-Ge films. Surface passivation studies revealed unexpected hole trapping defects generated when a-Ge:H film is applied. The a-Si:H films were found to be mechanically strong, no defect traps were found and preliminary results suggest that such films will be good passivants. 14 refs., 2 tabs., 7 figs., 13 ills

Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

Energy Technology Data Exchange (ETDEWEB)

Meneghini, M., E-mail: matteo.meneghini@dei.unipd.it; Bisi, D.; Meneghesso, G.; Zanoni, E. [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy); Marcon, D.; Stoffels, S.; Van Hove, M.; Wu, T.-L.; Decoutere, S. [IMEC, Kapeldreef 75, 3001 Heverlee (Belgium)

2014-04-07

This paper describes an extensive analysis of the role of off-state and semi-on state bias in inducing the trapping in GaN-based power High Electron Mobility Transistors. The study is based on combined pulsed characterization and on-resistance transient measurements. We demonstrate that—by changing the quiescent bias point from the off-state to the semi-on state—it is possible to separately analyze two relevant trapping mechanisms: (i) the trapping of electrons in the gate-drain access region, activated by the exposure to high drain bias in the off-state; (ii) the trapping of hot-electrons within the AlGaN barrier or the gate insulator, which occurs when the devices are operated in the semi-on state. The dependence of these two mechanisms on the bias conditions and on temperature, and the properties (activation energy and cross section) of the related traps are described in the text.

Tracing of border trap behavior by noise analysis in microelectronics

International Nuclear Information System (INIS)

Sharshar, K.A.A.; Shaalan, A.A.M.; Gomaa, E.I.

2008-01-01

The present state of art of this work is to study the electrical defects of the silicon- silicon dioxide interface created by gamma rays (Co 60 ) in submicron MOS devices used in telecommunication systems. We focus our investigation on a particular class of trapped charge located near the interface characterized as the border traps. The expected physical location and chemical structure of the traps were discussed. The low frequency 1/f noise measurement is used in the estimation of border trap densities before and after irradiation; the results are reported for n-MOS transistor exposed to doses (0.3, 0.5, 1 and 10 Mrad). The border trap population in the irradiated samples increased from 7.6*10 10 up to 1.03*10 11 eV -1 Cm -2

Optical trapping assembling of clusters and nanoparticles in solution by CW and femtosecond lasers

KAUST Repository

Masuhara, Hiroshi

2015-02-01

Laser trapping of molecular systems in solution is classified into three cases: JUST TRAPPING, EXTENDED TRAPPING, and NUCLEATION and GROWTH. The nucleation in amino acid solutions depends on where the 1064-nm CW trapping laser is focused, and crystallization and liquid–liquid phase separation are induced by laser trapping at the solution/air surface and the solution/glass interface, respectively. Laser trapping crystallization is achieved even in unsaturated solution, on which unique controls of crystallization are made possible. Crystal size is arbitrarily controlled by tuning laser power for a plate-like anhydrous crystal of l-phenylalanine. The α- or γ-crystal polymorph of glycine is selectively prepared by changing laser power and polarization. Further efficient trapping of nanoparticles and their following ejection induced by femtosecond laser pulses are introduced as unique trapping phenomena and finally future perspective is presented.

Optical trapping assembling of clusters and nanoparticles in solution by CW and femtosecond lasers

KAUST Repository

Masuhara, Hiroshi; Sugiyama, Teruki; Yuyama, Kenichi; Usman, Anwar

2015-01-01

Laser trapping of molecular systems in solution is classified into three cases: JUST TRAPPING, EXTENDED TRAPPING, and NUCLEATION and GROWTH. The nucleation in amino acid solutions depends on where the 1064-nm CW trapping laser is focused, and crystallization and liquid–liquid phase separation are induced by laser trapping at the solution/air surface and the solution/glass interface, respectively. Laser trapping crystallization is achieved even in unsaturated solution, on which unique controls of crystallization are made possible. Crystal size is arbitrarily controlled by tuning laser power for a plate-like anhydrous crystal of l-phenylalanine. The α- or γ-crystal polymorph of glycine is selectively prepared by changing laser power and polarization. Further efficient trapping of nanoparticles and their following ejection induced by femtosecond laser pulses are introduced as unique trapping phenomena and finally future perspective is presented.

Trapping of deuterium in argon-implanted nickel

International Nuclear Information System (INIS)

Frank, R.C.; Rehn, L.E.; Baldo, P.

1985-01-01

Argon ions with energy 250 keV were implanted at fluences of 2 x 10 16 cm -2 at temperatures of 500, 250, and 21 0 C, in the specimen of relatively pure polycrystalline nickel. Deuterium was introduced into the surface and implanted regions by making the specimen the negative electrode of an electrolytic cell containing 1-N pure deuterated sulfuric acid. Deuterium trapped in the vacancy complexes of the implanted regions was analyzed as a function of temperature using the vacancy complexes of the implanted regions was analyzed as a function of temperature using the 2 H( 3 He, 1 H) 4 He nuclear reaction during an isochronal annealing process. The results indicate that the types of traps and trap densities found in the regions implanted at 21 and 250 0 C were essentially identical while the trap density found in the region implanted at 500 0 C was approximately 40% of that found in the other regions. Math model comparison with the experimental results suggests the existence of at least two types of traps in each region. Trap binding enthalpies used in the math model to fit the experimental data were slightly higher for the region implanted with argon at 500 0 C than for the regions implanted at the lower temperatures. TEM studies revealed the presence of small voids in the region implanted at 500 0 as well as dislocation loops similar to those found in the regions implanted at the lower temperatures. 20 references, 2 figures

Artificial covering on trap nests improves the colonization of trap-nesting wasps

OpenAIRE

Taki, Hisatomo; Kevan, Peter G.; Viana, Blandina Felipe; Silva, Fabiana O.; Buck, Matthias

2008-01-01

Acesso restrito: Texto completo. p. 225-229 To evaluate the role that a trap-nest cover might have on sampling methodologies, the abundance of each species of trap-nesting Hymenoptera and the parasitism rate in a Canadian forest were compared between artificially covered and uncovered traps. Of trap tubes exposed at eight forest sites in six trap-nest boxes, 531 trap tubes were occupied and 1216 individuals of 12 wasp species of four predatory families, Vespidae (Eumeninae), Crabronidae...

Discriminating between antihydrogen and mirror-trapped antiprotons in a minimum-B trap

CERN Document Server

Amole, C; Ashkezari, M D; Baquero-Ruiz, M; Bertsche, W; Butler, E; Cesar, C L; Chapman, S; Charlton, M; Deller, A; Eriksson, S; Fajans, J; Friesen, T; Fujiwara, M C; Gill, D R; Gutierrez, A; Hangst, J S; Hardy, W N; Hayden, M E; Humphries, A J; Hydomako, R; Kurchaninov, L; Jonsell, S; Madsen, N; Menary, S; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Pusa, P; Robicheaux, F; Sarid, E; Silveira, D M; So, C; Storey, J W; Thompson, R I; van der Werf, D P; Wurtele, J S

2012-01-01

Recently, antihydrogen atoms were trapped at CERN in a magnetic minimum (minimum-B) trap formed by superconducting octupole and mirror magnet coils. The trapped antiatoms were detected by rapidly turning off these magnets, thereby eliminating the magnetic minimum and releasing any antiatoms contained in the trap. Once released, these antiatoms quickly hit the trap wall, whereupon the positrons and antiprotons in the antiatoms annihilated. The antiproton annihilations produce easily detected signals; we used these signals to prove that we trapped antihydrogen. However, our technique could be confounded by mirror-trapped antiprotons, which would produce seemingly-identical annihilation signals upon hitting the trap wall. In this paper, we discuss possible sources of mirror-trapped antiprotons and show that antihydrogen and antiprotons can be readily distinguished, often with the aid of applied electric fields, by analyzing the annihilation locations and times. We further discuss the general properties of antipr...

Trapping of quantum particles and light beams by switchable potential wells

International Nuclear Information System (INIS)

Sonkin, Eduard; Malomed, Boris A.; Granot, Er'el; Marchewka, Avi

2010-01-01

We consider basic dynamical effects in settings based on a pair of local potential traps that may be effectively switched on and off, or suddenly displaced, by means of appropriate control mechanisms, such as scanning tunneling microscopy or photo-switchable quantum dots. The same models, based on the linear Schroedinger equation with time-dependent trapping potentials, apply to the description of optical planar systems designed for the switching of trapped light beams. The analysis is carried out in the analytical form, using exact solutions of the Schroedinger equation. The first dynamical problem considered in this work is the retention of a particle released from a trap which was suddenly turned off, while another local trap was switched on at a distance--immediately or with a delay. In this case, we demonstrate that the maximum of the retention rate is achieved at a specific finite value of the strength of the new trap, and at a finite value of the temporal delay, depending on the distance between the two traps. Another problem is retrapping of the bound particle when the addition of the second trap transforms the single-well setting into a double-well potential (DWP). In that case, we find probabilities for the retrapping into the ground or first excited state of the DWP. We also analyze effects entailed by the application of a kick to a bound particle, the most interesting one being a kick-induced transition between the DWP's ground and excited states. In the latter case, the largest transition probability is achieved at a particular strength of the kick.

Intensity-modulated polarizabilities and magic trapping of alkali-metal and divalent atoms in infrared optical lattices

Science.gov (United States)

Topcu, Turker; Derevianko, Andrei

2014-05-01

Long range interactions between neutral Rydberg atoms has emerged as a potential means for implementing quantum logical gates. These experiments utilize hyperfine manifold of ground state atoms to act as a qubit basis, while exploiting the Rydberg blockade mechanism to mediate conditional quantum logic. The necessity for overcoming several sources of decoherence makes magic wavelength trapping in optical lattices an indispensable tool for gate experiments. The common wisdom is that atoms in Rydberg states see trapping potentials that are essentially that of a free electron, and can only be trapped at laser intensity minima. We show that although the polarizability of a Rydberg state is always negative, the optical potential can be both attractive or repulsive at long wavelengths (up to ~104 nm). This opens up the possibility of magic trapping Rydberg states with ground state atoms in optical lattices, thereby eliminating the necessity to turn off trapping fields during gate operations. Because the wavelengths are near the CO2 laser band, the photon scattering and the ensuing motional heating is also reduced compared to conventional traps near low lying resonances, alleviating an important source of decoherence. This work was supported by the National Science Foundation (NSF) Grant No. PHY-1212482.

Single trapped cold ions: a testing ground for quantum mechanics

International Nuclear Information System (INIS)

Maniscalco, S

2005-01-01

In this article I review some results obtained during my PhD work in the group of Professor Messina, at the University of Palermo. I discuss some proposals aimed at exploring fundamental issues of quantum theory, e.g. entanglement and quantum superpositions, in the context of single trapped ions. This physical context turns out to be extremely well suited both for studying fundamental features of quantum mechanics, such as the quantum-classical border, and for technological applications such as quantum logic gates and quantum registers. I focus on some procedures for engineering nonclassical states of the vibrational motion of the centre of mass of the ion. I consider both the case in which the ion interacts with classical laser beams and the case of interaction with a quantized mode of light. In particular, I discuss the generation of Schroedinger cat-like states, Bell states and Greenberger-Horn-Zeilinger states. The schemes for generating nonclassical states stem from two different quantum processes: the parity effect and the quantum state manipulation via quantum non-demolition measurement. Finally, I consider a microscopic theory of the interaction of a quantum harmonic oscillator (the centre of mass of the ion in the trapped ion context) with a bosonic thermal environment. Using an exact approach to the dynamics, I discuss a quantum theory of heating of trapped ions able to describe both the short time non-Markovian regime and the thermalization process. I conclude showing briefly how the trapped ion systems can be used as simulators of key models of open quantum systems such as the Caldeira-Leggett model. (phd tutorial)

Stable Trapping of Multielectron Helium Bubbles in a Paul Trap

Science.gov (United States)

Joseph, E. M.; Vadakkumbatt, V.; Pal, A.; Ghosh, A.

2017-06-01

In a recent experiment, we have used a linear Paul trap to store and study multielectron bubbles (MEBs) in liquid helium. MEBs have a charge-to-mass ratio (between 10^{-4} and 10^{-2} C/kg) which is several orders of magnitude smaller than ions (between 10^6 and 10^8 C/kg) studied in traditional ion traps. In addition, MEBs experience significant drag force while moving through the liquid. As a result, the experimental parameters for stable trapping of MEBs, such as magnitude and frequency of the applied electric fields, are very different from those used in typical ion trap experiments. The purpose of this paper is to model the motion of MEBs inside a linear Paul trap in liquid helium, determine the range of working parameters of the trap, and compare the results with experiments.

Rashba split surface states in BiTeBr

International Nuclear Information System (INIS)

Eremeev, S V; Rusinov, I P; Nechaev, I A; Chulkov, E V

2013-01-01

Within density functional theory, we study the bulk band structure and surface states of BiTeBr. We consider both ordered and disordered phases, which differ in atomic order in the Te–Br sublattice. On the basis of relativistic ab initio calculations, we show that the ordered BiTeBr is energetically preferable as compared with the disordered one. We demonstrate that both Te- and Br-terminated surfaces of the ordered BiTeBr hold surface states with a giant spin–orbit splitting. The Te-terminated surface-state spin splitting has Rashba-type behavior with the coupling parameter α R ∼ 2 eVÅ. (paper)

Density profiles and collective excitations of a trapped two-component Fermi vapour

International Nuclear Information System (INIS)

Amoruso, M.; Meccoli, I.; Minguzzi, A.; Tosi, M.P.

1999-08-01

We discuss the ground state and the small-amplitude excitations of a degenerate vapour of fermionic atoms placed in two hyperfine states inside a spherical harmonic trap. An equations-of-motion approach is set up to discuss the hydrodynamic dissipation processes from the interactions between the two components of the fluid beyond mean-field theory and to emphasize analogies with spin dynamics and spin diffusion in a homogeneous Fermi liquid. The conditions for the establishment of a collisional regime via scattering against cold-atom impurities are analyzed. The equilibrium density profiles are then calculated for a two-component vapour of 40 K atoms: they are little modified by the interactions for presently relevant values of the system parameters, but spatial separation of the two components will spontaneously arise as the number of atoms in the trap is increased. The eigenmodes of collective oscillation in both the total particle number density and the concentration density are evaluated analytically in the special case of a symmetric two-component vapour in the collisional regime. The dispersion relation of the surface modes for the total particle density reduces in this case to that of a one-component Fermi vapour, whereas the frequencies of all other modes are shifted by the interactions. (author)