WorldWideScience

Sample records for surface passivation technique

  1. Evaluation of two reverse passive haemagglutination techniques and a solid-phase radioimmunoassay for detection of hepatitis B surface antigen

    Energy Technology Data Exchange (ETDEWEB)

    Zhuang, H [Beijing Medical College (China); Coulepis, A G; Gust, I D [Fairfield Hospital for Communicable Diseases, Melbourne (Australia)

    1972-08-01

    The sensitivity and specificity of two commercially available reverse passive haemagglutination tests (Hepatest and Raphadex B) for the detection of hepatitis B surface antigen, were compared with the most widely used radioimmunoassay (Ausria II-125). A selected group of 282 sera were tested: these included the Australian hepatitis B reference panel, and a batch of 257 sera collected from patients with acute hepatitis B, chronic carriers of hepatitis B surface antigen and two populations in which hepatitis B virus infection is known to be endemic. The two reverse passive haemagglutination techniques were of comparable sensitivity but slightly less sensitive than radioimmunoassay. While radioimmunoassay still remains the test of choice for blood transfusion services, the reverse passive haemagglutination techniques are of great value for smaller laboratories and for field studies because of their longer shelf life, the absence of radioactive reagents and the lack of need to acquire a gammacounter.

  2. Application of various surface passivation layers in solar cells

    International Nuclear Information System (INIS)

    Lee, Ji Youn; Lee, Soo Hong

    2004-01-01

    In this work, we have used different techniques for surface passivation: conventional thermal oxidation (CTO), rapid thermal oxidation (RTO), and plasma-enhanced chemical vapour deposition (PECVD). The surface passivation qualities of eight different single and combined double layers have been investigated both on phosphorus non-diffused p-type Float Zone (FZ) silicon wafers and on diffused emitters (100 Ω/□ and 40 Ω/□). CTO/SiN 1 passivates very well not only on a non-diffused surface (τ eff = 1361 μs) but also on an emitter (τ eff = 414 μs). However, we concluded that RTO/SiN 1 and RTO/SiN 2 stacks were more suitable than CTO/SiN stacks for surface passivation in solar cells since those stacks had relatively good passivation qualities and suitable optical reflections. RTO/SiN 1 for rear-surface passivation and RTO/SiN 2 for front-surface passivation were applied to the fabrication of solar cells. We achieved efficiencies of 18.5 % and 18.8 % on 0.5 Ω-cm (FZ) silicon with planar and textured front surfaces, respectively. An excellent open circuit voltage (V oc ) of 675.6 mV was obtained for the planar cell.

  3. Bismuth Passivation Technique for High-Resolution X-Ray Detectors

    Science.gov (United States)

    Chervenak, James; Hess, Larry

    2013-01-01

    The Athena-plus team requires X-ray sensors with energy resolution of better than one part in 3,000 at 6 keV X-rays. While bismuth is an excellent material for high X-ray stopping power and low heat capacity (for large signal when an X-ray is stopped by the absorber), oxidation of the bismuth surface can lead to electron traps and other effects that degrade the energy resolution. Bismuth oxide reduction and nitride passivation techniques analogous to those used in indium passivation are being applied in a new technique. The technique will enable improved energy resolution and resistance to aging in bismuth-absorber-coupled X-ray sensors. Elemental bismuth is lithographically integrated into X-ray detector circuits. It encounters several steps where the Bi oxidizes. The technology discussed here will remove oxide from the surface of the Bi and replace it with nitridized surface. Removal of the native oxide and passivating to prevent the growth of the oxide will improve detector performance and insulate the detector against future degradation from oxide growth. Placing the Bi coated sensor in a vacuum system, a reduction chemistry in a plasma (nitrogen/hydrogen (N2/H2) + argon) is used to remove the oxide and promote nitridization of the cleaned Bi surface. Once passivated, the Bi will perform as a better X-ray thermalizer since energy will not be trapped in the bismuth oxides on the surface. A simple additional step, which can be added at various stages of the current fabrication process, can then be applied to encapsulate the Bi film. After plasma passivation, the Bi can be capped with a non-diffusive layer of metal or dielectric. A non-superconducting layer is required such as tungsten or tungsten nitride (WNx).

  4. Surface Passivation for Single-molecule Protein Studies

    Science.gov (United States)

    Chandradoss, Stanley D.; Haagsma, Anna C.; Lee, Young Kwang; Hwang, Jae-Ho; Nam, Jwa-Min; Joo, Chirlmin

    2014-01-01

    Single-molecule fluorescence spectroscopy has proven to be instrumental in understanding a wide range of biological phenomena at the nanoscale. Important examples of what this technique can yield to biological sciences are the mechanistic insights on protein-protein and protein-nucleic acid interactions. When interactions of proteins are probed at the single-molecule level, the proteins or their substrates are often immobilized on a glass surface, which allows for a long-term observation. This immobilization scheme may introduce unwanted surface artifacts. Therefore, it is essential to passivate the glass surface to make it inert. Surface coating using polyethylene glycol (PEG) stands out for its high performance in preventing proteins from non-specifically interacting with a glass surface. However, the polymer coating procedure is difficult, due to the complication arising from a series of surface treatments and the stringent requirement that a surface needs to be free of any fluorescent molecules at the end of the procedure. Here, we provide a robust protocol with step-by-step instructions. It covers surface cleaning including piranha etching, surface functionalization with amine groups, and finally PEG coating. To obtain a high density of a PEG layer, we introduce a new strategy of treating the surface with PEG molecules over two rounds, which remarkably improves the quality of passivation. We provide representative results as well as practical advice for each critical step so that anyone can achieve the high quality surface passivation. PMID:24797261

  5. Terahertz emission from semi-insulating GaAs with octadecanthiol-passivated surface

    International Nuclear Information System (INIS)

    Wu, Xiaojun; Xu, Xinlong; Lu, Xinchao; Wang, Li

    2013-01-01

    Terahertz (THz) emission from octadecanthiol (ODT) passivated (1 0 0) surface of the semi-insulating GaAs was measured, and compared with those from the native oxidized and the fresh surfaces. It was shown that the self-assembled ODT monolayer can stabilize the GaAs (1 0 0) surface, and maintain a THz surface emission 1.4 times as efficient as the native oxidized surface under equal conditions. Surface passivation can reduce the built-in electric field in the depletion region of the GaAs (1 0 0), resulting in the suppression of the THz radiation to a different extent. Oxidation of GaAs surface reduces the THz amplitude mainly in the low-frequency region. These results indicate that GaAs can be made a more effective THz source by choosing molecular passivation technique. Conversely, the THz emission features such as polarity, amplitude, and phase from molecule-passivated surfaces may be used to characterize the attached molecules.

  6. Rain detection over land surfaces using passive microwave satellite data

    NARCIS (Netherlands)

    Bauer, P.; Burose, D.; Schulz, J.

    2002-01-01

    An algorithm is presented for the detection of surface rainfall using passive microwave measurements by satellite radiometers. The technique consists of a two-stage approach to distinguish precipitation signatures from other effects: (1) Contributions from slowly varying parameters (surface type and

  7. Passive RF component technology materials, techniques, and applications

    CERN Document Server

    Wang, Guoan

    2012-01-01

    Focusing on novel materials and techniques, this pioneering volume provides you with a solid understanding of the design and fabrication of smart RF passive components. You find comprehensive details on LCP, metal materials, ferrite materials, nano materials, high aspect ratio enabled materials, green materials for RFID, and silicon micromachining techniques. Moreover, this practical book offers expert guidance on how to apply these materials and techniques to design a wide range of cutting-edge RF passive components, from MEMS switch based tunable passives and 3D passives, to metamaterial-bas

  8. Frequency-Wavenumber (FK)-Based Data Selection in High-Frequency Passive Surface Wave Survey

    Science.gov (United States)

    Cheng, Feng; Xia, Jianghai; Xu, Zongbo; Hu, Yue; Mi, Binbin

    2018-04-01

    Passive surface wave methods have gained much attention from geophysical and civil engineering communities because of the limited application of traditional seismic surveys in highly populated urban areas. Considering that they can provide high-frequency phase velocity information up to several tens of Hz, the active surface wave survey would be omitted and the amount of field work could be dramatically reduced. However, the measured dispersion energy image in the passive surface wave survey would usually be polluted by a type of "crossed" artifacts at high frequencies. It is common in the bidirectional noise distribution case with a linear receiver array deployed along roads or railways. We review several frequently used passive surface wave methods and derive the underlying physics for the existence of the "crossed" artifacts. We prove that the "crossed" artifacts would cross the true surface wave energy at fixed points in the f-v domain and propose a FK-based data selection technique to attenuate the artifacts in order to retrieve the high-frequency information. Numerical tests further demonstrate the existence of the "crossed" artifacts and indicate that the well-known wave field separation method, FK filter, does not work for the selection of directional noise data. Real-world applications manifest the feasibility of the proposed FK-based technique to improve passive surface wave methods by a priori data selection. Finally, we discuss the applicability of our approach.

  9. Frequency-Wavenumber (FK)-Based Data Selection in High-Frequency Passive Surface Wave Survey

    Science.gov (United States)

    Cheng, Feng; Xia, Jianghai; Xu, Zongbo; Hu, Yue; Mi, Binbin

    2018-07-01

    Passive surface wave methods have gained much attention from geophysical and civil engineering communities because of the limited application of traditional seismic surveys in highly populated urban areas. Considering that they can provide high-frequency phase velocity information up to several tens of Hz, the active surface wave survey would be omitted and the amount of field work could be dramatically reduced. However, the measured dispersion energy image in the passive surface wave survey would usually be polluted by a type of "crossed" artifacts at high frequencies. It is common in the bidirectional noise distribution case with a linear receiver array deployed along roads or railways. We review several frequently used passive surface wave methods and derive the underlying physics for the existence of the "crossed" artifacts. We prove that the "crossed" artifacts would cross the true surface wave energy at fixed points in the f- v domain and propose a FK-based data selection technique to attenuate the artifacts in order to retrieve the high-frequency information. Numerical tests further demonstrate the existence of the "crossed" artifacts and indicate that the well-known wave field separation method, FK filter, does not work for the selection of directional noise data. Real-world applications manifest the feasibility of the proposed FK-based technique to improve passive surface wave methods by a priori data selection. Finally, we discuss the applicability of our approach.

  10. Improvement of crystalline silicon surface passivation by hydrogen plasma treatment

    International Nuclear Information System (INIS)

    Martin, I.; Vetter, M.; Orpella, A.; Voz, C.; Puigdollers, J.; Alcubilla, R.; Kharchenko, A.V.; Roca i Cabarrocas, P.

    2004-01-01

    A completely dry low-temperature process has been developed to passivate 3.3 Ω cm p-type crystalline silicon surface with excellent results. Particularly, we have investigated the use of a hydrogen plasma treatment, just before hydrogenated amorphous silicon carbide (a-SiC x :H) deposition, without breaking the vacuum. We measured effective lifetime, τ eff , through a quasi-steady-state photoconductance technique. Experimental results show that hydrogen plasma treatment improves surface passivation compared to classical HF dip. S eff values lower than 19 cm s -1 were achieved using a hydrogen plasma treatment and an a-SiC x :H film deposited at 300 deg. C

  11. Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

    International Nuclear Information System (INIS)

    Hai-Qing, Xiao; Chun-Lan, Zhou; Xiao-Ning, Cao; Wen-Jing, Wang; Lei, Zhao; Hai-Ling, Li; Hong-Wei, Diao

    2009-01-01

    Al 2 O 3 films with a thickness of about 100 nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100 cm/s is obtained on 10Ω ·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 10 12 cm −2 is detected in the Al 2 O 3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO 2 and plasma enhanced chemical vapor deposition SiN x :H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al 2 O 3 . (cross-disciplinary physics and related areas of science and technology)

  12. Characterization of a complex near-surface structure using well logging and passive seismic measurements

    Science.gov (United States)

    Benjumea, Beatriz; Macau, Albert; Gabàs, Anna; Figueras, Sara

    2016-04-01

    We combine geophysical well logging and passive seismic measurements to characterize the near-surface geology of an area located in Hontomin, Burgos (Spain). This area has some near-surface challenges for a geophysical study. The irregular topography is characterized by limestone outcrops and unconsolidated sediments areas. Additionally, the near-surface geology includes an upper layer of pure limestones overlying marly limestones and marls (Upper Cretaceous). These materials lie on top of Low Cretaceous siliciclastic sediments (sandstones, clays, gravels). In any case, a layer with reduced velocity is expected. The geophysical data sets used in this study include sonic and gamma-ray logs at two boreholes and passive seismic measurements: three arrays and 224 seismic stations for applying the horizontal-to-vertical amplitude spectra ratio method (H/V). Well-logging data define two significant changes in the P-wave-velocity log within the Upper Cretaceous layer and one more at the Upper to Lower Cretaceous contact. This technique has also been used for refining the geological interpretation. The passive seismic measurements provide a map of sediment thickness with a maximum of around 40 m and shear-wave velocity profiles from the array technique. A comparison between seismic velocity coming from well logging and array measurements defines the resolution limits of the passive seismic techniques and helps it to be interpreted. This study shows how these low-cost techniques can provide useful information about near-surface complexity that could be used for designing a geophysical field survey or for seismic processing steps such as statics or imaging.

  13. Determination of radon exhalation rates from tiles using active and passive techniques

    International Nuclear Information System (INIS)

    Al-Jarallah, M.I.; Abu-Jarad, F.; Fazal-ur-Rehman

    2001-01-01

    Measurements of radon exhalation rates for selected samples of tiles used in Saudi Arabia were carried out using active and passive measuring techniques. These samples were granite, marble and ceramic. In the active method, a PC-based radon gas analyzer with emanation container was used, while, in the passive method, PM-355 nuclear track detectors with the 'can technique' were applied for 180 days. A comparison of the exhalation rates measured by the two techniques showed a good linear correlation coefficient of 0.7. The granite samples showed an average radon exhalation rate of 0.7 Bq m -2 h -1 , which was higher than that of marble and ceramic by more than twofold. The radon exhalation rates measured by the 'can technique' showed a non-uniform exhalation from the surface of the same tile

  14. Dual Electrolytic Plasma Processing for Steel Surface Cleaning and Passivation

    Science.gov (United States)

    Yang, L.; Zhang, P.; Shi, J.; Liang, J.; Tian, W. B.; Zhang, Y. M.; Sun, Z. M.

    2017-10-01

    To remove the rust on rebars and passivate the fresh surfaces, electrodes reversing electrolytic plasma processing (EPP) was proposed and conducted in a 10 wt.% Na2CO3 aqueous solution. The morphology and the composition of the surface were investigated by SEM and XPS. Experimental results show that the rust on the surface was removed effectively by cathode EPP, and a passive film containing Cr2O3 was achieved by the succeeding anode EPP treatment, by a simple operation of reversing the bias. The corrosion resistance was evaluated in a 3.5 wt.% NaCl aqueous solution using an electrochemical workstation. In comparison, the corrosion resistance was improved by the succeeding anode EPP treatment, which is evidenced by a positive shift of the open-circuit potential, an increase in the electrochemical impedance representing the inner layer by 76.8% and the decrease in the corrosion current density by 49.6%. This is an effective and environment-friendly technique to clean and passivate rebars and similar steel materials.

  15. Comparison of surface doses from spot scanning and passively scattered proton therapy beams

    International Nuclear Information System (INIS)

    Arjomandy, Bijan; Sahoo, Narayan; Gillin, Michael; Cox, James; Lee, Andrew

    2009-01-01

    Proton therapy for the treatment of cancer is delivered using either passively scattered or scanning beams. Each technique delivers a different amount of dose to the skin, because of the specific feature of their delivery system. The amount of dose delivered to the skin can play an important role in choosing the delivery technique for a specific site. To assess the differences in skin doses, we measured the surface doses associated with these two techniques. For the purpose of this investigation, the surface doses in a phantom were measured for ten prostate treatment fields planned with passively scattered proton beams and ten patients planned with spot scanning proton beams. The measured doses were compared to evaluate the differences in the amount of skin dose delivered by using these techniques. The results indicate that, on average, the patients treated with spot scanning proton beams received lower skin doses by an amount of 11.8% ± 0.3% than did the patients treated with passively scattered proton beams. That difference could amount to 4 CGE per field for a prescribed dose of 76 CGE in 38 fractions treated with two equally weighted parallel opposed fields. (note)

  16. Surface passivation technology for III-V semiconductor nanoelectronics

    International Nuclear Information System (INIS)

    Hasegawa, Hideki; Akazawa, Masamichi

    2008-01-01

    The present status and key issues of surface passivation technology for III-V surfaces are discussed in view of applications to emerging novel III-V nanoelectronics. First, necessities of passivation and currently available surface passivation technologies for GaAs, InGaAs and AlGaAs are reviewed. Then, the principle of the Si interface control layer (ICL)-based passivation scheme by the authors' group is introduced and its basic characterization is presented. Ths Si ICL is a molecular beam epitaxy (MBE)-grown ultrathin Si layer inserted between III-V semiconductor and passivation dielectric. Finally, applications of the Si ICL method to passivation of GaAs nanowires and GaAs nanowire transistors and to realization of pinning-free high-k dielectric/GaAs MOS gate stacks are presented

  17. Determination of radon exhalation rates from tiles using active and passive techniques

    Energy Technology Data Exchange (ETDEWEB)

    Al-Jarallah, M.I. E-mail: mibrahim@kfupm.edu.sa; Abu-Jarad, F.; Fazal-ur-Rehman

    2001-06-01

    Measurements of radon exhalation rates for selected samples of tiles used in Saudi Arabia were carried out using active and passive measuring techniques. These samples were granite, marble and ceramic. In the active method, a PC-based radon gas analyzer with emanation container was used, while, in the passive method, PM-355 nuclear track detectors with the 'can technique' were applied for 180 days. A comparison of the exhalation rates measured by the two techniques showed a good linear correlation coefficient of 0.7. The granite samples showed an average radon exhalation rate of 0.7 Bq m{sup -2} h{sup -1}, which was higher than that of marble and ceramic by more than twofold. The radon exhalation rates measured by the 'can technique' showed a non-uniform exhalation from the surface of the same tile.

  18. Nanolayer surface passivation schemes for silicon solar cells

    NARCIS (Netherlands)

    Dingemans, G.

    2011-01-01

    This thesis is concerned with nanolayer surface passivation schemes and corresponding deposition processes, for envisaged applications in crystalline silicon solar cells. Surface passivation, i.e. the reduction of electronic recombination processes at semiconductor surfaces, is essential for

  19. Analysis and suppression of passive noise in surface microseismic data

    Science.gov (United States)

    Forghani-Arani, Farnoush

    Surface microseismic surveys are gaining popularity in monitoring the hydraulic fracturing process. The effectiveness of these surveys, however, is strongly dependent on the signal-to-noise ratio of the acquired data. Cultural and industrial noise generated during hydraulic fracturing operations usually dominate the data, thereby decreasing the effectiveness of using these data in identifying and locating microseismic events. Hence, noise suppression is a critical step in surface microseismic monitoring. In this thesis, I focus on two important aspects in using surface-recorded microseismic seismic data: first, I take advantage of the unwanted surface noise to understand the characteristics of these noise and extract information about the propagation medium from the noise; second, I propose effective techniques to suppress the surface noise while preserving the waveforms that contain information about the source of microseisms. Automated event identification on passive seismic data using only a few receivers is challenging especially when the record lengths span over long durations of time. I introduce an automatic event identification algorithm that is designed specifically for detecting events in passive data acquired with a small number of receivers. I demonstrate that the conventional STA/LTA (Short-term Average/Long-term Average) algorithm is not sufficiently effective in event detection in the common case of low signal-to-noise ratio. With a cross-correlation based method as an extension of the STA/LTA algorithm, even low signal-to-noise events (that were not detectable with conventional STA/LTA) were revealed. Surface microseismic data contains surface-waves (generated primarily from hydraulic fracturing activities) and body-waves in the form of microseismic events. It is challenging to analyze the surface-waves on the recorded data directly because of the randomness of their source and their unknown source signatures. I use seismic interferometry to extract

  20. Nitride surface passivation of GaAs nanowires: impact on surface state density.

    Science.gov (United States)

    Alekseev, Prokhor A; Dunaevskiy, Mikhail S; Ulin, Vladimir P; Lvova, Tatiana V; Filatov, Dmitriy O; Nezhdanov, Alexey V; Mashin, Aleksander I; Berkovits, Vladimir L

    2015-01-14

    Surface nitridation by hydrazine-sulfide solution, which is known to produce surface passivation of GaAs crystals, was applied to GaAs nanowires (NWs). We studied the effect of nitridation on conductivity and microphotoluminescence (μ-PL) of individual GaAs NWs using conductive atomic force microscopy (CAFM) and confocal luminescent microscopy (CLM), respectively. Nitridation is found to produce an essential increase in the NW conductivity and the μ-PL intensity as well evidence of surface passivation. Estimations show that the nitride passivation reduces the surface state density by a factor of 6, which is of the same order as that found for GaAs/AlGaAs nanowires. The effects of the nitride passivation are also stable under atmospheric ambient conditions for six months.

  1. Extrinsic passivation of silicon surfaces for solar cells

    OpenAIRE

    Bonilla, R.S.; Reichel, C.; Hermle, M.; Martins, G.; Wilshaw, P.R.

    2015-01-01

    In the present work we study the extent to which extrinsic chemical and field effect passivation can improve the overall electrical passivation quality of silicon dioxide on silicon. Here we demonstrate that, when optimally applied, extrinsic passivation can produce surface recombination velocities below 1.2 cm/s in planar 1 Omega cm n-type Si. This is largely due to the additional field effect passivation component which reduces the recombination velocity below 2.13 cm/s. On textured surface...

  2. Superacid Passivation of Crystalline Silicon Surfaces.

    Science.gov (United States)

    Bullock, James; Kiriya, Daisuke; Grant, Nicholas; Azcatl, Angelica; Hettick, Mark; Kho, Teng; Phang, Pheng; Sio, Hang C; Yan, Di; Macdonald, Daniel; Quevedo-Lopez, Manuel A; Wallace, Robert M; Cuevas, Andres; Javey, Ali

    2016-09-14

    The reduction of parasitic recombination processes commonly occurring within the silicon crystal and at its surfaces is of primary importance in crystalline silicon devices, particularly in photovoltaics. Here we explore a simple, room temperature treatment, involving a nonaqueous solution of the superacid bis(trifluoromethane)sulfonimide, to temporarily deactivate recombination centers at the surface. We show that this treatment leads to a significant enhancement in optoelectronic properties of the silicon wafer, attaining a level of surface passivation in line with state-of-the-art dielectric passivation films. Finally, we demonstrate its advantage as a bulk lifetime and process cleanliness monitor, establishing its compatibility with large area photoluminescence imaging in the process.

  3. Surface passivation of high-purity germanium gamma-ray detector

    International Nuclear Information System (INIS)

    Alexiev, D.; Butcher, K.S.A.; Edmondson, M.; Lawson, E.M.

    1993-01-01

    The experimental work consists of two parts. The first involves fabrication of hyper-pure germanium gamma ray detectors using standard surface treatment, chemical etchings and containment in a suitable cryostat. Then, after cooling the detectors to 77 K, γ-ray emissions from radioisotopes are resolved, resolution, depletion depth, V R versus I R characteristics and /N A -N D / of the germanium are measured. The second part of the work involves investigation of surface states in an effort to achieve long-term stability of operating characteristics. Several methods are used: plasma hydrogenation, a-Si and a-Ge pinch-off effect and simple oxidation. A-Ge and a-Si thicknesses were measured using Rutherford backscattering techniques; surface states were measured with deep level transient spectroscopy and diode reverse current versus reverse voltage plots. Some scanning electron microscope measurements were used in determining major film contaminants during backscattering of a-Si and a-Ge films. Surface passivation studies revealed unexpected hole trapping defects generated when a-Ge:H film is applied. The a-Si:H films were found to be mechanically strong, no defect traps were found and preliminary results suggest that such films will be good passivants. 14 refs., 2 tabs., 7 figs., 13 ills

  4. Record Charge Carrier Diffusion Length in Colloidal Quantum Dot Solids via Mutual Dot-To-Dot Surface Passivation.

    Science.gov (United States)

    Carey, Graham H; Levina, Larissa; Comin, Riccardo; Voznyy, Oleksandr; Sargent, Edward H

    2015-06-03

    Through a combination of chemical and mutual dot-to-dot surface passivation, high-quality colloidal quantum dot solids are fabricated. The joint passivation techniques lead to a record diffusion length for colloidal quantum dots of 230 ± 20 nm. The technique is applied to create thick photovoltaic devices that exhibit high current density without losing fill factor. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Surface passivation for CdTe devices

    Energy Technology Data Exchange (ETDEWEB)

    Reese, Matthew O.; Perkins, Craig L.; Burst, James M.; Gessert, Timothy A.; Barnes, Teresa M.; Metzger, Wyatt K.

    2017-08-01

    In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

  6. Analysis of surface dark current dependent upon surface passivation in APD based on GaAs

    International Nuclear Information System (INIS)

    Song, Hong Joo; Roh, Cheong Hyun; Lee, Jun Ho; Choi, Hong Goo; Hahn, Cheol-Koo; Kim, Dong Ho; Park, Jung Ho

    2009-01-01

    In this paper, we investigated the dependence of reverse dark current on two types of surface passivation, one of which is polyimide and the other is SiN x , for InAs quantum dots/GaAs separate absorption, charge, multiplication avalanche photodiode (SACM APD). From the experimental results, we found that dark current was dominated by surface current, and not bulk current. It was also noted that SiN x passivation has a surface current that is lower by three to nine times in magnitude than that in polyimide passivation in the whole range of bias. To analyze the difference in dark current due to the passivation types, we propose the theoretical current components. This shows that the dark current of both passivation types is mainly composed of generation–recombination (G–R) and tunneling components, originating from the surface. However, each component has a different magnitude for passivation types, which can be explained by carrier concentration and trap density. The dependence of dark current on temperature shows the different behaviors between passivation types and supports a theoretical description of current components

  7. Sulfidic photochemical passivation of GaAs surfaces in alcoholic solutions

    International Nuclear Information System (INIS)

    Simonsmeier, T.; Ivankov, A.; Bauhofer, W.

    2005-01-01

    We report on a remarkable enhancement of the passivation effect of sulfidic solutions through illumination with above band gap light. Luminescence measurements on GaAs surfaces which have been illuminated during chemical passivation reveal in comparison to nonilluminated samples a further reduction of their surface density of states as well as a significantly increased stability of the passivation. Investigations with photoelectron spectroscopy show that illumination leads to a nearly complete removal of oxides on the surface. Measurements on Schottky diodes which have been manufactured with photochemically passivated GaAs indicate a noticeable decrease in band bending and a depinning of the Fermi level

  8. Reconstructions of the sulfur-passivated InSb (100) surface

    Energy Technology Data Exchange (ETDEWEB)

    Ciochoń, Piotr, E-mail: piotr.ciochon@doctoral.uj.edu.pl; Olszowska, Natalia; Wróbel, Sonia; Kołodziej, Jacek

    2017-04-01

    Highlights: • Two new surface reconstructions of a S-passivated InSb (001) surface are reported. • The reconstructions are obtained through partial loss of surface sulfur. • They are characterized by the thickness of ∼4 Å and good crystallographic ordering. • The reconstructions provide adequate electronic passivation of the surface. - Abstract: We have studied the properties of the InSb (100) surface passivated with sulfur dimers emitted by the solid-state electrochemical cell in ultra-high vacuum. Annealing the passivated surface in the temperature equal to T = 326 °C led to the formation of the c(4 × 8) surface reconstruction, while increasing the temperature to T = 348 °C resulted in the transition to c(4 × 12) reconstruction. To the best of our knowledge these reconstructions have not been reported to date and are characterized by the exceptionally good crystallographic order. XPS studies revealed that there are at least 4 different chemical species of sulfur present on the surface and the estimated thickness of the sulfur layers is equal to around 4 Å. The surface reconstructions are characterized by the lowered intensity of the surface electronic states and resonances near the Fermi level, compared to the clean InSb surface, making them potentially very useful for the fabrication of InSb-based electronic and optoelectronic devices.

  9. Carrier population control and surface passivation in solar cells

    KAUST Repository

    Cuevas, Andres

    2018-05-02

    Controlling the concentration of charge carriers near the surface is essential for solar cells. It permits to form regions with selective conductivity for either electrons or holes and it also helps to reduce the rate at which they recombine. Chemical passivation of the surfaces is equally important, and it can be combined with population control to implement carrier-selective, passivating contacts for solar cells. This paper discusses different approaches to suppress surface recombination and to manipulate the concentration of carriers by means of doping, work function and charge. It also describes some of the many surface-passivating contacts that are being developed for silicon solar cells, restricted to experiments performed by the authors.

  10. Passivation Of High-Temperature Superconductors

    Science.gov (United States)

    Vasquez, Richard P.

    1991-01-01

    Surfaces of high-temperature superconductors passivated with native iodides, sulfides, or sulfates formed by chemical treatments after superconductors grown. Passivating compounds nearly insoluble in and unreactive with water and protect underlying superconductors from effects of moisture. Layers of cuprous iodide and of barium sulfate grown. Other candidate passivating surface films: iodides and sulfides of bismuth, strontium, and thallium. Other proposed techniques for formation of passivating layers include deposition and gas-phase reaction.

  11. Surface passivation process of compound semiconductor material using UV photosulfidation

    Science.gov (United States)

    Ashby, Carol I. H.

    1995-01-01

    A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

  12. Surface Defect Passivation and Reaction of c-Si in H2S.

    Science.gov (United States)

    Liu, Hsiang-Yu; Das, Ujjwal K; Birkmire, Robert W

    2017-12-26

    A unique passivation process of Si surface dangling bonds through reaction with hydrogen sulfide (H 2 S) is demonstrated in this paper. A high-level passivation quality with an effective minority carrier lifetime (τ eff ) of >2000 μs corresponding to a surface recombination velocity of passivation by monolayer coverage of S on the Si surface. However, S passivation of the Si surface is highly unstable because of thermodynamically favorable reaction with atmospheric H 2 O and O 2 . This instability can be eliminated by capping the S-passivated Si surface with a protective thin film such as low-temperature-deposited amorphous silicon nitride.

  13. Mesoscale Elucidation of Surface Passivation in the Li-Sulfur Battery Cathode.

    Science.gov (United States)

    Liu, Zhixiao; Mukherjee, Partha P

    2017-02-15

    The cathode surface passivation caused by Li 2 S precipitation adversely affects the performance of lithium-sulfur (Li-S) batteries. Li 2 S precipitation is a complicated mesoscale process involving adsorption, desorption and diffusion kinetics, which are affected profoundly by the reactant concentration and operating temperature. In this work, a mesoscale interfacial model is presented to study the growth of Li 2 S film on carbon cathode surface. Li 2 S film growth experiences nucleation, isolated Li 2 S island growth and island coalescence. The slow adsorption rate at small S 2- concentration inhibits the formation of nucleation seeds and the lateral growth of Li 2 S islands, which deters surface passivation. An appropriate operating temperature, especially in the medium-to-high temperature range, can also defer surface passivation. Fewer Li 2 S nucleation seeds form in such an operating temperature range, thereby facilitating heterogeneous growth and potentially inhibiting the lateral growth of the Li 2 S film, which may ultimately result in reduced surface passivation. The high specific surface area of the cathode microstructure is expected to mitigate the surface passivation.

  14. Passive monitoring for near surface void detection using traffic as a seismic source

    Science.gov (United States)

    Zhao, Y.; Kuzma, H. A.; Rector, J.; Nazari, S.

    2009-12-01

    In this poster we present preliminary results based on our several field experiments in which we study seismic detection of voids using a passive array of surface geophones. The source of seismic excitation is vehicle traffic on nearby roads, which we model as a continuous line source of seismic energy. Our passive seismic technique is based on cross-correlation of surface wave fields and studying the resulting power spectra, looking for "shadows" caused by the scattering effect of a void. High frequency noise masks this effect in the time domain, so it is difficult to see on conventional traces. Our technique does not rely on phase distortions caused by small voids because they are generally too tiny to measure. Unlike traditional impulsive seismic sources which generate highly coherent broadband signals, perfect for resolving phase but too weak for resolving amplitude, vehicle traffic affords a high power signal a frequency range which is optimal for finding shallow structures. Our technique results in clear detections of an abandoned railroad tunnel and a septic tank. The ultimate goal of this project is to develop a technology for the simultaneous imaging of shallow underground structures and traffic monitoring near these structures.

  15. L2-gain and passivity techniques in nonlinear control

    CERN Document Server

    van der Schaft, Arjan

    2017-01-01

    This standard text gives a unified treatment of passivity and L2-gain theory for nonlinear state space systems, preceded by a compact treatment of classical passivity and small-gain theorems for nonlinear input-output maps. The synthesis between passivity and L2-gain theory is provided by the theory of dissipative systems. Specifically, the small-gain and passivity theorems and their implications for nonlinear stability and stabilization are discussed from this standpoint. The connection between L2-gain and passivity via scattering is detailed. Feedback equivalence to a passive system and resulting stabilization strategies are discussed. The passivity concepts are enriched by a generalised Hamiltonian formalism, emphasising the close relations with physical modeling and control by interconnection, and leading to novel control methodologies going beyond passivity. The potential of L2-gain techniques in nonlinear control, including a theory of all-pass factorizations of nonlinear systems, and of parametrization...

  16. Optical near-field lithography on hydrogen-passivated silicon surfaces

    DEFF Research Database (Denmark)

    Madsen, Steen; Müllenborn, Matthias; Birkelund, Karen

    1996-01-01

    by the optical near field, were observed after etching in potassium hydroxide. The uncoated fibers can also induce oxidation without light exposure, in a manner similar to an atomic force microscope, and linewidths of 50 nm have been achieved this way. (C) 1996 American Institute of Physics.......We report on a novel lithography technique for patterning of hydrogen-passivated amorphous silicon surfaces. A reflection mode scanning near-field optical microscope with uncoated fiber probes has been used to locally oxidize a thin amorphous silicon layer. Lines of 110 nm in width, induced...

  17. Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells

    NARCIS (Netherlands)

    Schmidt, J.; Werner, F.; Veith, B.; Zielke, D.; Bock, R.; Tiba, M.V.; Poodt, P.; Roozeboom, F.; Li, A.; Cuevas, A.; Brendel, R.

    2010-01-01

    We present independently confirmed efficiencies of 21.4% for PERC cells with plasma-assisted atom-ic-layer-deposited (plasma ALD) Al2O3 rear passivation and 20.7% for cells with thermal ALD-Al2O3. Additionally, we evaluate three different industrially relevant techniques for the deposition of

  18. Electrical passivation of the silicon surface by organic monolayers of 1-octadecene

    International Nuclear Information System (INIS)

    Antonova, I. V.; Soots, R. A.; Seleznev, V. A.; Prints, V. Ya.

    2007-01-01

    The electrical properties of structures consisting of a monolayer of 1-octadecene deposited on the Si surface are investigated depending on the method of passivation of the surface prior to the deposition of the film (hydrogen and ion passivation) and the intensity of illumination which activates the addition reaction of molecules of 1-octadecene to the Si atoms. The monolayer of 1-octadecene on the Si surface is stable and provides the chemical passivation of the surface. Two types of traps are found, namely, traps for holes and electrons, whose density can be varied during deposition of the monolayer by the choice of intensity of illumination and by the method of passivation of the surface. In the case of a low level of illumination and/or the use of the iodine passivation of the surface, the electron traps prevail, and, in the case of high intensity of illumination and/or hydrogen passivation of the surface, the hole traps prevail. It is shown that the use of these films provides conductivity in thin near-surface layers of Si due to providing the mode of flat bands or accumulation of carriers near the surface

  19. Application of a passive electrochemical noise technique to localized corrosion of candidate radioactive waste container materials

    International Nuclear Information System (INIS)

    Korzan, M.A.

    1994-05-01

    One of the key engineered barriers in the design of the proposed Yucca Mountain repository is the waste canister that encapsulates the spent fuel elements. Current candidate metals for the canisters to be emplaced at Yucca Mountain include cast iron, carbon steel, Incoloy 825 and titanium code-12. This project was designed to evaluate passive electrochemical noise techniques for measuring pitting and corrosion characteristics of candidate materials under prototypical repository conditions. Experimental techniques were also developed and optimized for measurements in a radiation environment. These techniques provide a new method for understanding material response to environmental effects (i.e., gamma radiation, temperature, solution chemistry) through the measurement of electrochemical noise generated during the corrosion of the metal surface. In addition, because of the passive nature of the measurement the technique could offer a means of in-situ monitoring of barrier performance

  20. Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

    Science.gov (United States)

    Grant, Nicholas E.

    2016-01-01

    A procedure to measure the bulk lifetime (>100 µsec) of silicon wafers by temporarily attaining a very high level of surface passivation when immersing the wafers in hydrofluoric acid (HF) is presented. By this procedure three critical steps are required to attain the bulk lifetime. Firstly, prior to immersing silicon wafers into HF, they are chemically cleaned and subsequently etched in 25% tetramethylammonium hydroxide. Secondly, the chemically treated wafers are then placed into a large plastic container filled with a mixture of HF and hydrochloric acid, and then centered over an inductive coil for photoconductance (PC) measurements. Thirdly, to inhibit surface recombination and measure the bulk lifetime, the wafers are illuminated at 0.2 suns for 1 min using a halogen lamp, the illumination is switched off, and a PC measurement is immediately taken. By this procedure, the characteristics of bulk silicon defects can be accurately determined. Furthermore, it is anticipated that a sensitive RT surface passivation technique will be imperative for examining bulk silicon defects when their concentration is low (<1012 cm-3). PMID:26779939

  1. [Influence of Natural Dissolved Organic Matter on the Passive Sampling Technique and its Application].

    Science.gov (United States)

    Yu, Shang-yun; Zhou, Yan-mei

    2015-08-01

    This paper studied the effects of different concentrations of natural dissolved organic matter (DOM) on the passive sampling technique. The results showed that the presence of DOM affected the organic pollutant adsorption ability of the membrane. For lgK(OW), 3-5, DOM had less impact on the adsorption of organic matter by the membrane; for lgK(OW), > 5.5, DOM significantly increased the adsorption capacity of the membrane. Meanwhile, LDPE passive sampling technique was applied to monitor PAHs and PAEs in pore water of three surface sediments in Taizi River. All of the target pollutants were detected in varying degrees at each sampling point. Finally, the quotient method was used to assess the ecological risks of PAHs and PAEs. The results showed that fluoranthene exceeded the reference value of the aquatic ecosystem, meaning there was a big ecological risk.

  2. Passive films at the nanoscale

    International Nuclear Information System (INIS)

    Maurice, Vincent; Marcus, Philippe

    2012-01-01

    Highlights: ► Nanoscale data on growth, structure and local properties of passive films reviewed. ► Preferential role of defects of passive films on the corrosion resistance emphasized. ► Effect of grain boundaries on local electronic properties shown by new data. ► Use of atomistic modeling to test mechanistic hypotheses illustrated. - Abstract: The nanometer scale chemical and structural aspects of ultrathin oxide passive films providing self-protection against corrosion to metals and alloys in aqueous environments are reviewed. Data on the nucleation and growth of 2D anodic oxide films, details on the atomic structure and nanostructure of 3D passive films, the preferential role of surface step edges in dissolution in the passive state and the preferential role of grain boundaries of the passive films in passivity breakdown are presented. Future perspectives are discussed, and exemplified by new data obtained on the relationship between the nanostructure of oxide passive films and their local electronic properties. Atomistic corrosion modeling by ab initio density functional theory (DFT) is illustrated by the example of interactions of chloride ions with hydroxylated oxide surfaces, including the role of surface step edges. Data obtained on well-defined substrate surfaces with surface analytical techniques are emphasized.

  3. Silicon surface passivation using thin HfO2 films by atomic layer deposition

    International Nuclear Information System (INIS)

    Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K.K.; Srivastava, Ritu; Singh, P.K.

    2015-01-01

    Graphical abstract: - Highlights: • HfO 2 films using thermal ALD are studied for silicon surface passivation. • As-deposited thin film (∼8 nm) shows better passivation with surface recombination velocity (SRV) <100 cm/s. • Annealing improves passivation quality with SRV ∼20 cm/s for ∼8 nm film. - Abstract: Hafnium oxide (HfO 2 ) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO 2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (D it ) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

  4. Effect of passive film on electrochemical surface treatment for indium tin oxide

    International Nuclear Information System (INIS)

    Wu, Yung-Fu; Chen, Chi-Hao

    2013-01-01

    Highlights: ► Oxalic, tartaric, and citric acid baths accompanying with applied voltages were used to treat the ITO surface. ► We investigated the changes in ITO surfaces by examining the potentiodynamic behavior of ITO films. ► AFM analysis showed the formation of a passive layer could assist to planarize surface. ► XPS analysis indicated this passive layer was mainly composed of SnO 2. ► A better planarization was obtained by treating in 3.0 wt.% tartaric acid at 0.5 V due to weak complexation strength. - Abstract: Changes in indium tin oxide (ITO) film surface during electrochemical treatment in oxalic acid, tartaric acid, and citric acid were investigated. Controlling the voltage applied on ITO film allows the formation of a passive layer, effectively protecting the film surface. X-ray photoelectron spectrometry showed that the passive layer composition was predominantly SnO 2 in tartaric acid, while a composite of tin oxide and tin carboxylate in citric or oxalic acid. Even though the passive films on ITO surface generated in these organic acids, the indium or tin could complex with the organic acid anions, enhancing the dissolution of ITO films. The experimental results show that the interaction between the dissolution and passivation could assist to planarize the ITO surface. We found that the optimal treatment at 0.5 V in 3 wt.% tartaric acid could provide the ITO surface with root-mean-squared roughness less than 1.0 nm, due to the weak complexing characteristics of tartaric acid.

  5. Surface passivation of liquid phase epitaxial GaAs

    International Nuclear Information System (INIS)

    Alexiev, D.; Butcher, K.S.A.; Mo, L.; Edmondson, M.

    1995-10-01

    Passivation of the liquid phase epitaxial GaAs surface was attempted using aqueous P 2 S 5 -NH 4 OH, (NH 4 ) 2 S x and plasma nitrogenation and hydrogenation. Results indicate that plasma nitrogenation with pretreatment of plasma hydrogenation produced consistent reduction in reverse leakage current at room temperature for all p and n type Schottky diodes. Some diodes showed an order of magnitude improvement in current density. (NH 4 ) 2 S x passivation also results in improved I-V characteristics, though the long term stability of this passivation is questionable. 26 refs., 6 figs

  6. Surface donor states distribution post SiN passivation of AlGaN/GaN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Goyal, Nitin, E-mail: nitin@unik.no [Carinthian Tech Research CTR AG, Europastraße 4/1, Technologiepark Villach, A- 9524 Villach/St. Magdalen (Austria); Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway); Fjeldly, Tor A. [Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway)

    2014-07-21

    In this paper, we present a physics based analytical model to describe the effect of SiN passivation on two-dimensional electron gas density and surface barrier height in AlGaN/GaN heterostructures. The model is based on an extraction technique to calculate surface donor density and surface donor level at the SiN/AlGaN interface. The model is in good agreement with the experimental results and promises to become a useful tool in advanced design and characterization of GaN based heterostructures.

  7. Effectiveness of passive stretching versus hold relax technique in flexibility of hamstring muscle

    Directory of Open Access Journals (Sweden)

    Gauri Shankar

    2010-10-01

    Full Text Available Aim: To compare the effectiveness of passive stretching and hold relax technique in the flexibility of hamstring muscle. Methods: A total of 80 normal healthy female subjects between age group 20-30 years referred to the department of physiotherapy, Sumandeep Vidyapeeth University, sampling method being convenient sampling. The subjects were randomly divided in two groups i.e. passive stretching group (n=40 and PNF group (n=40 and given passive stretching and proprioceptive neuromuscular facilitation technique respectively. Active knee extension range was measured before and after the intervention by goniometer. Results: t test showed a highly significant (p=0.000 increase in range of motion in PNF group. Conclusion: Proprioceptive neuromuscular facilitation technique is more effective in increasing hamstring flexibility than the passive stretching.

  8. Surface passivation of high purity granular metals: zinc, cadmium, lead

    Directory of Open Access Journals (Sweden)

    Pirozhenko L. A.

    2017-10-01

    Full Text Available For the high purity metals (99.9999%, such as zinc, cadmium, and lead, which are widely used as initial components in growing semiconductor and scintillation crystals (CdTe, CdZnTe, ZnSe, (Cd, Zn, Pb WO4, (Cd, Zn, Pb MoO4 et al., it is very important to ensure reliable protection of the surface from oxidation and adsorption of impurities from the atmosphere. The specific features of surface passivation of high purity cadmium, lead and zinc are not sufficiently studied and require specific methodologies for further studies. The use of organic solutions in the schemes of chemical passivation of the investigated metals avoids hydrolysis of the obtained protective films. The use of organic solvents with pure cation and anion composition as the washing liquid prevents chemisorption of ions present in the conventionally used distilled water. This keeps the original purity of the granular metals. Novel compositions of etchants and etching scheme providing simultaneous polishing and passivation of high purity granular Zn, Cd and Pb are developed. Chemical passivation allows storing metals in the normal atmospheric conditions for more than half a year for Zn and Cd and up to 30 days for Pb without changing the state of the surface. The use of the glycerol-DMF solution in the processes for obtaining Pb granules provides self-passivation of metal surfaces and eliminates the additional chemical processing while maintaining the quality of corrosion protection.

  9. A new structure for comparing surface passivation materials of GaAs solar cells

    Science.gov (United States)

    Desalvo, Gregory C.; Barnett, Allen M.

    1989-01-01

    The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

  10. Effects of surface passivation on twin-free GaAs nanosheets.

    Science.gov (United States)

    Arab, Shermin; Chi, Chun-Yung; Shi, Teng; Wang, Yuda; Dapkus, Daniel P; Jackson, Howard E; Smith, Leigh M; Cronin, Stephen B

    2015-02-24

    Unlike nanowires, GaAs nanosheets exhibit no twin defects, stacking faults, or dislocations even when grown on lattice mismatched substrates. As such, they are excellent candidates for optoelectronic applications, including LEDs and solar cells. We report substantial enhancements in the photoluminescence efficiency and the lifetime of passivated GaAs nanosheets produced using the selected area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). Measurements are performed on individual GaAs nanosheets with and without an AlGaAs passivation layer. Both steady-state photoluminescence and time-resolved photoluminescence spectroscopy are performed to study the optoelectronic performance of these nanostructures. Our results show that AlGaAs passivation of GaAs nanosheets leads to a 30- to 40-fold enhancement in the photoluminescence intensity. The photoluminescence lifetime increases from less than 30 to 300 ps with passivation, indicating an order of magnitude improvement in the minority carrier lifetime. We attribute these enhancements to the reduction of nonradiative recombination due to the compensation of surface states after passivation. The surface recombination velocity decreases from an initial value of 2.5 × 10(5) to 2.7 × 10(4) cm/s with passivation.

  11. Techniques for active passivation

    Science.gov (United States)

    Roscioli, Joseph R.; Herndon, Scott C.; Nelson, Jr., David D.

    2016-12-20

    In one embodiment, active (continuous or intermittent) passivation may be employed to prevent interaction of sticky molecules with interfaces inside of an instrument (e.g., an infrared absorption spectrometer) and thereby improve response time. A passivation species may be continuously or intermittently applied to an inlet of the instrument while a sample gas stream is being applied. The passivation species may have a highly polar functional group that strongly binds to either water or polar groups of the interfaces, and once bound presents a non-polar group to the gas phase in order to prevent further binding of polar molecules. The instrument may be actively used to detect the sticky molecules while the passivation species is being applied.

  12. Highly reflective rear surface passivation design for ultra-thin Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Vermang, Bart, E-mail: Bart.Vermang@angstrom.uu.se [Ångström Solar Center, University of Uppsala, Uppsala 75121 (Sweden); ESAT-KU Leuven, University of Leuven, Leuven 3001 (Belgium); Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika [Ångström Solar Center, University of Uppsala, Uppsala 75121 (Sweden); Gunnarsson, Rickard; Pilch, Iris; Helmersson, Ulf [Plasma & Coatings Physics, University of Linköping, Linköping 58183 (Sweden); Kotipalli, Ratan; Henry, Frederic; Flandre, Denis [ICTEAM/IMNC, Université Catholique de Louvain, Louvain-la-Neuve 1348 (Belgium)

    2015-05-01

    Al{sub 2}O{sub 3} rear surface passivated ultra-thin Cu(In,Ga)Se{sub 2} (CIGS) solar cells with Mo nano-particles (NPs) as local rear contacts are developed to demonstrate their potential to improve optical confinement in ultra-thin CIGS solar cells. The CIGS absorber layer is 380 nm thick and the Mo NPs are deposited uniformly by an up-scalable technique and have typical diameters of 150 to 200 nm. The Al{sub 2}O{sub 3} layer passivates the CIGS rear surface between the Mo NPs, while the rear CIGS interface in contact with the Mo NP is passivated by [Ga]/([Ga] + [In]) (GGI) grading. It is shown that photon scattering due to the Mo NP contributes to an absolute increase in short circuit current density of 3.4 mA/cm{sup 2}; as compared to equivalent CIGS solar cells with a standard back contact. - Highlights: • Proof-of-principle ultra-thin CIGS solar cells have been fabricated. • The cells have Mo nano-particles (NPs) as local rear contacts. • An Al{sub 2}O{sub 3} film passivates the CIGS rear surface between these nano-particles. • [Ga]/([Ga] + [In]) grading is used to reduce Mo-NP/CIGS interface recombination.

  13. Passive anti-frosting surfaces using microscopic ice arrays

    Science.gov (United States)

    Ahmadi, Farzad; Nath, Saurabh; Iliff, Grady; Boreyko, Jonathan

    2017-11-01

    Despite exceptional advances in surface chemistry and micro/nanofabrication, no engineered surface has been able to passively suppress the in-plane growth of frost occurring in humid, subfreezing environments. Motivated by this, and inspired by the fact that ice itself can evaporate nearby liquid water droplets, we present a passive anti-frosting surface in which the majority of the surface remains dry indefinitely. We fabricated an aluminum surface exhibiting an array of small metallic fins, where a wicking micro-groove was laser-cut along the top of each fin to produce elevated water ``stripes'' that freeze into ice. As the saturation vapor pressure of ice is less than that of supercooled liquid water, the ice stripes serve as overlapping humidity sinks that siphon all nearby moisture from the air and prevent condensation and frost from forming anywhere else on the surface. Our experimental results show that regions between stripes remain dry even after 24 hours of operation under humid and supercooled conditions. We believe that the presented anti-frosting technology has the potential to help solve the world's multi-billion dollar frosting problem that adversely affects transportation, power generation, and HVAC systems.

  14. High-sensitivity measurements for low-level TRU wastes using advanced passive neutron techniques

    International Nuclear Information System (INIS)

    Menlove, H.O.; Eccleston, G.W.

    1992-01-01

    In recent years, both passive- and active-neutron nondestructive assay (NDA) systems have been used to measure the uranium and plutonium content in 200-ell drums. Because of the heterogeneity of the wastes, representative sampling is not possible and NDA methods are preferred over destructive analysis. Active-neutron assay systems are used to measure the fissile isotopes such as 235 U, 23 Pu, and 241 Pu; the isotopic ratios are used to infer the total plutonium content and thus the specific disintegration rate. The active systems include 14-MeV-neutron (DT) generators with delayed-neutron counting, (D,T) generators with the differential die-away technique, and 252 Cf delayed-neutron shufflers. Passive assay systems (for example, segmented gamma-ray scanners)5 have used gamma-ray sessions, while others (for example, passive drum counters) used passive-neutron signals. We have developed a new passive-neutron measurement technique to improve the accuracy and sensitivity of the NDA of plutonium scrap and waste. This new 200-ell-drum assay system combines the classical NDA method of counting passive-neutron totals and coincidences from plutonium with the new features of ''add-a-source'' (AS) and multiplicity counting to improve the accuracy of matrix corrections and statistical techniques that improve the low-level detectability limits. This paper describes the improvements we have made in passive-neutron assay systems and compares the accuracies and detectability limits of passive- and active-neutron assay systems

  15. Wireless passive radiation sensor

    Science.gov (United States)

    Pfeifer, Kent B; Rumpf, Arthur N; Yelton, William G; Limmer, Steven J

    2013-12-03

    A novel measurement technique is employed using surface acoustic wave (SAW) devices, passive RF, and radiation-sensitive films to provide a wireless passive radiation sensor that requires no batteries, outside wiring, or regular maintenance. The sensor is small (<1 cm.sup.2), physically robust, and will operate unattended for decades. In addition, the sensor can be insensitive to measurement position and read distance due to a novel self-referencing technique eliminating the need to measure absolute responses that are dependent on RF transmitter location and power.

  16. Passivation of hexagonal SiC surfaces by hydrogen termination

    International Nuclear Information System (INIS)

    Seyller, Thomas

    2004-01-01

    Surface hydrogenation is a well established technique in silicon technology. It is easily accomplished by wet-chemical procedures and results in clean and unreconstructed surfaces, which are extremely low in charged surface states and stable against oxidation in air, thus constituting an ideal surface preparation. As a consequence, methods for hydrogenation have been sought for preparing silicon carbide (SiC) surfaces with similar well defined properties. It was soon recognized, however, that due to different surface chemistry new ground had to be broken in order to find a method leading to the desired monatomic hydrogen saturation. In this paper the results of H passivation of SiC surfaces by high-temperature hydrogen annealing will be discussed, thereby placing emphasis on chemical, structural and electronic properties of the resulting surfaces. In addition to their unique properties, hydrogenated hexagonal SiC {0001} surfaces offer the interesting possibility of gaining insight into the formation of silicon- and carbon-rich reconstructions as well. This is due to the fact that to date hydrogenation is the only method providing oxygen-free surfaces with a C to Si ratio of 1:1. Last but not least, the electronic properties of hydrogen-free SiC {0001} surfaces will be alluded to. SiC {0001} surfaces are the only known semiconductor surfaces that can be prepared in their unreconstructed (1 x 1) state with one dangling bond per unit cell by photon induced hydrogen desorption. These surfaces give indications of a Mott-Hubbard surface band structure

  17. Wet-chemical passivation of InAs: toward surfaces with high stability and low toxicity.

    Science.gov (United States)

    Jewett, Scott A; Ivanisevic, Albena

    2012-09-18

    In a variety of applications where the electronic and optical characteristics of traditional, siliconbased materials are inadequate, recently researchers have employed semiconductors made from combinations of group III and V elements such as InAs. InAs has a narrow band gap and very high electron mobility in the near-surface region, which makes it an attractive material for high performance transistors, optical applications, and chemical sensing. However, silicon-based materials remain the top semiconductors of choice for biological applications, in part because of their relatively low toxicity. In contrast to silicon, InAs forms an unstable oxide layer under ambient conditions, which can corrode over time and leach toxic indium and arsenic components. To make InAs more attractive for biological applications, researchers have investigated passivation, chemical and electronic stabilization, of the surface by adlayer adsorption. Because of the simplicity, low cost, and flexibility in the type of passivating molecule used, many researchers are currently exploring wet-chemical methods of passivation. This Account summarizes much of the recent work on the chemical passivation of InAs with a particular focus on the chemical stability of the surface and prevention of oxide regrowth. We review the various methods of surface preparation and discuss how crystal orientation affects the chemical properties of the surface. The correct etching of InAs is critical as researchers prepare the surface for subsequent adlayer adsorption. HCl etchants combined with a postetch annealing step allow the tuning of the chemical properties in the near-surface region to either arsenic- or indium-rich environments. Bromine etchants create indium-rich surfaces and do not require annealing after etching; however, bromine etchants are harsh and potentially destructive to the surface. The simultaneous use of NH(4)OH etchants with passivating molecules prevents contact with ambient air that can

  18. Passivation of phosphorus diffused silicon surfaces with Al2O3: Influence of surface doping concentration and thermal activation treatments

    International Nuclear Information System (INIS)

    Richter, Armin; Benick, Jan; Kimmerle, Achim; Hermle, Martin; Glunz, Stefan W.

    2014-01-01

    Thin layers of Al 2 O 3 are well known for the excellent passivation of p-type c-Si surfaces including highly doped p + emitters, due to a high density of fixed negative charges. Recent results indicate that Al 2 O 3 can also provide a good passivation of certain phosphorus-diffused n + c-Si surfaces. In this work, we studied the recombination at Al 2 O 3 passivated n + surfaces theoretically with device simulations and experimentally for Al 2 O 3 deposited with atomic layer deposition. The simulation results indicate that there is a certain surface doping concentration, where the recombination is maximal due to depletion or weak inversion of the charge carriers at the c-Si/Al 2 O 3 interface. This pronounced maximum was also observed experimentally for n + surfaces passivated either with Al 2 O 3 single layers or stacks of Al 2 O 3 capped by SiN x , when activated with a low temperature anneal (425 °C). In contrast, for Al 2 O 3 /SiN x stacks activated with a short high-temperature firing process (800 °C) a significant lower surface recombination was observed for most n + diffusion profiles without such a pronounced maximum. Based on experimentally determined interface properties and simulation results, we attribute this superior passivation quality after firing to a better chemical surface passivation, quantified by a lower interface defect density, in combination with a lower density of negative fixed charges. These experimental results reveal that Al 2 O 3 /SiN x stacks can provide not only excellent passivation on p + surfaces but also on n + surfaces for a wide range of surface doping concentrations when activated with short high-temperature treatments

  19. Silver nanoparticles-incorporated Nb2O5 surface passivation layer for efficiency enhancement in dye-sensitized solar cells.

    Science.gov (United States)

    Suresh, S; Unni, Gautam E; Satyanarayana, M; Sreekumaran Nair, A; Mahadevan Pillai, V P

    2018-08-15

    Guiding and capturing photons at the nanoscale by means of metal nanoparticles and interfacial engineering for preventing back-electron transfer are well documented techniques for performance enhancement in excitonic solar cells. Drifting from the conventional route, we propose a simple one-step process to integrate both metal nanoparticles and surface passivation layer in the porous photoanode matrix of a dye-sensitized solar cell. Silver nanoparticles and Nb 2 O 5 surface passivation layer are simultaneously deposited on the surface of a highly porous nanocrystalline TiO 2 photoanode, facilitating an absorption enhancement in the 465 nm and 570 nm wavelength region and a reduction in back-electron transfer in the fabricated dye-sensitized solar cells together. The TiO 2 photoanodes were prepared by spray pyrolysis deposition method from a colloidal solution of TiO 2 nanoparticles. An impressive 43% enhancement in device performance was accomplished in photoanodes having an Ag-incorporated Nb 2 O 5 passivation layer as against a cell without Ag nanoparticles. By introducing this idea, we were able to record two benefits - the metal nanoparticles function as the absorption enhancement agent, and the Nb 2 O 5 layer as surface passivation for TiO 2 nanoparticles and as an energy barrier layer for preventing back-electron transfer - in a single step. Copyright © 2018 Elsevier Inc. All rights reserved.

  20. Surface Passivation for Reliable Measurement of Bulk Electronic Properties of Heterojunction Devices.

    Science.gov (United States)

    Bissig, Benjamin; Guerra-Nunez, Carlos; Carron, Romain; Nishiwaki, Shiro; La Mattina, Fabio; Pianezzi, Fabian; Losio, Paolo A; Avancini, Enrico; Reinhard, Patrick; Haass, Stefan G; Lingg, Martina; Feurer, Thomas; Utke, Ivo; Buecheler, Stephan; Tiwari, Ayodhya N

    2016-10-01

    Quantum efficiency measurements of state of the art Cu(In,Ga)Se 2 (CIGS) thin film solar cells reveal current losses in the near infrared spectral region. These losses can be ascribed to inadequate optical absorption or poor collection of photogenerated charge carriers. Insight on the limiting mechanism is crucial for the development of more efficient devices. The electron beam induced current measurement technique applied on device cross-sections promises an experimental access to depth resolved information about the charge carrier collection probability. Here, this technique is used to show that charge carrier collection in CIGS deposited by multistage co-evaporation at low temperature is efficient over the optically active region and collection losses are minor as compared to the optical ones. Implications on the favorable absorber design are discussed. Furthermore, it is observed that the measurement is strongly affected by cross-section surface recombination and an accurate determination of the collection efficiency is not possible. Therefore it is proposed and shown that the use of an Al 2 O 3 layer deposited onto the cleaved cross-section significantly improves the accuracy of the measurement by reducing the surface recombination. A model for the passivation mechanism is presented and the passivation concept is extended to other solar cell technologies such as CdTe and Cu 2 (Zn,Sn)(S,Se) 4 . © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Temporary surface passivation for characterisation of bulk defects in silicon : a review

    OpenAIRE

    Grant, Nicholas E.; Murphy, John D.

    2017-01-01

    Accurate measurements of the bulk minority carrier lifetime in high-quality silicon materials is challenging due to the influence of surface recombination. Conventional surface passivation processes such as thermal oxidation or dielectric deposition often modify the bulk lifetime significantly before measurement. Temporary surface passivation processes at room or very low temperatures enable a more accurate measurement of the true bulk lifetime, as they limit thermal reconfiguration of bulk d...

  2. Thermal stability studies on atomically clean and sulphur passivated InGaAs surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Chauhan, Lalit; Hughes, Greg [School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9 (Ireland)

    2013-03-15

    High resolution synchrotron radiation core level photoemission measurements have been used to study the high temperature stability of sulphur passivated InGaAs surfaces and comparisons made with atomically clean surfaces subjected to the same annealing temperatures. Sulphur passivation of clean InGaAs surfaces prepared by the thermal removal of an arsenic capping layer was carried out using an in situ molecular sulphur treatment in ultra high vacuum. The elemental composition of the surfaces of these materials was measured at a series of annealing temperatures up to 530 C. Following a 480 C anneal In:Ga ratio was found to have dropped by 33% on sulphur passivated surface indicating a significant loss of indium, while no drop in indium signal was recorded at this temperature on the atomically InGaAs surface. No significant change in the As surface concentration was measured at this temperature. These results reflect the reduced thermal stability of the sulphur passivated InGaAs compared to the atomically clean surface which has implications for device fabrication. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Chemical and electrical properties of (NH4)2S passivated GaSb surface

    International Nuclear Information System (INIS)

    Tao Dongyan; Cheng Yu; Liu Jingming; Su Jie; Liu Tong; Yang Fengyun; Wang Fenghua; Cao Kewei; Dong Zhiyuan; Zhao Youwen

    2015-01-01

    The surface chemical properties of gallium antimonide (GaSb) after ammonium sulfide ((NH 4 ) 2 S) solution passivation have been studied by X-ray photoelectron spectroscopy (XPS), time of flight secondary ion mass spectroscopy (TOF-SIMS) and I–V measurement. An advantage of neutral (NH 4 ) 2 S + S solution over pure (NH 4 ) 2 S solution and alkaline (NH 4 ) 2 S + S solution has been found in the ability to passivate the GaSb surface by contrast and comparison. It has been found that alkaline (NH 4 ) 2 S + S solution passivation effectively removes oxides of the GaSb surface and forms sulfide products to improve device performance. TOF-SIMS complementally demonstrates that pure (NH 4 ) 2 S passivation did form sulfide products, which are too soluble to really exist. The lowest roughness determined using a 3D optical profilometer and the highest improved SBD quality proved that neutral (NH 4 ) 2 S + S solution passivation worked much better in improving the surface properties of GaSb. (paper)

  4. Effects of surface passivation on α-Si_3N_4 nanobelts: A first-principles study

    International Nuclear Information System (INIS)

    Xiong, Li; Dai, Jianhong; Song, Yan; Wen, Guangwu; Qin, Chunlin

    2016-01-01

    Highlights: • The stability and electronic properties of α-Si_3N_4 nanobelts are theoretically studied. • The surface of α-Si_3N_4 nanobelts are passivated with H, OH, F and Cl atoms. • The structural stability of nanobelts decreases in the order of OH, F, Cl, and H passivations. • The surface passivation greatly changes the electronic structures of α-Si_3N_4 nanobelts. - Abstract: The energetic stability and electronic structures of H, OH, F, or Cl passivated α-Si_3N_4 nanobelts orientating along various directions are systematically investigated via first-principles calculations. The results show that the stability of nanobelts is more sensitive to the surface passivation than growth direction. It decreases in the order of (100% OH), (50% H, 50% OH), (50% H, 50% F), (100% F), (50% H, 50% Cl), (100% Cl), (100% H), and unpassivation. H atoms prefer to bond with surface N atoms of nanobelts, while OH, F and Cl prefer to bond with Si atoms of nanobelts. In addition, the surface passivation greatly changes the electronic structures of nanobelts. The OH and F passivations result in the larger band gaps than the Cl passivation. While the coverage of OH, F or Cl increases to 100%, their band gaps decrease significantly, indicating an improvement of electrical properties, which is good agreement with the experimental findings. The 100% Cl-passivated nanobelt orientating along the [011] direction possesses the smallest band gap of 1.038 eV. The band gaps are found to be affected by a competition between quantum confinement effect and the role of the surface passivated groups or atoms at the band-gap edges.

  5. NPR and ANSI Containment Study Using Passive Cooling Techniques

    International Nuclear Information System (INIS)

    Shin, J. J.; Iotti, R. C.; Wright, R. F.

    1993-01-01

    Passive containment cooling study of NPR (New Production Reactor) and ANSI (Advanced Neutron Source) following postulated loss of coolant accident with a coincident station blackout due to total loss of all alternating current power are studied analytically and experimentally. All the reactor and containment cooling under this condition would rely on the passive cooling system which removes reactor decay heat and provides emergency core and containment cooling. Containment passive emergency core and containment cooling. Containment passive cooling for this study takes place in the annulus between containment steel shell and concrete shield building by natural convection air flow and concrete shield building by natural convection air flow and thermal radiation. Various heat transfer coefficients inside annular air space were investigated by running the modified Contempt code Contempt-Npr. In order to verify proper heat transfer coefficient, temperature, heat flux and velocity profiles were measured inside annular air space of the test facility which is a 24 foot (7.3m) high, steam heated inner cylinder of three foot (.91m) diameter and five and halt foot (1.7m) diameter outer cylinder. Comparison of Contempt-Npr and WGOTHIC was done for reduced scale Npr. It is concluded that Npr and ANSI containments can be passively cooled with air alone without extended cooling surfaces or passive water spray

  6. Electrical and optical characterization of surface passivation in GaAs nanowires.

    Science.gov (United States)

    Chang, Chia-Chi; Chi, Chun-Yung; Yao, Maoqing; Huang, Ningfeng; Chen, Chun-Chung; Theiss, Jesse; Bushmaker, Adam W; Lalumondiere, Stephen; Yeh, Ting-Wei; Povinelli, Michelle L; Zhou, Chongwu; Dapkus, P Daniel; Cronin, Stephen B

    2012-09-12

    We report a systematic study of carrier dynamics in Al(x)Ga(1-x)As-passivated GaAs nanowires. With passivation, the minority carrier diffusion length (L(diff)) increases from 30 to 180 nm, as measured by electron beam induced current (EBIC) mapping, and the photoluminescence (PL) lifetime increases from sub-60 ps to 1.3 ns. A 48-fold enhancement in the continuous-wave PL intensity is observed on the same individual nanowire with and without the Al(x)Ga(1-x)As passivation layer, indicating a significant reduction in surface recombination. These results indicate that, in passivated nanowires, the minority carrier lifetime is not limited by twin stacking faults. From the PL lifetime and minority carrier diffusion length, we estimate the surface recombination velocity (SRV) to range from 1.7 × 10(3) to 1.1 × 10(4) cm·s(-1), and the minority carrier mobility μ is estimated to lie in the range from 10.3 to 67.5 cm(2) V(-1) s(-1) for the passivated nanowires.

  7. Surface-passivation-induced optical changes in Ge quantum dots

    International Nuclear Information System (INIS)

    Reboredo, F. A.; Zunger, Alex

    2001-01-01

    One of the most interesting properties of quantum dots is the possibility to tune the band gap as a function of their size. Here we explore the possibility of changing the lifetime of the lowest-energy excited state by altering the surface passivation. We show that a moderately electronegative passivation potential can induce long-lived excitons without appreciable changes to the band gap. In addition, for such passivation the symmetry of the valence-band maximum is γ 8# sub v# (t 1 derived) instead of the more usual γ 8v (t 2 derived). This reverses the effect of the exchange interaction on the bright-dark exciton splitting

  8. Protective capping and surface passivation of III-V nanowires by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dhaka, Veer, E-mail: veer.dhaka@aalto.fi; Perros, Alexander; Kakko, Joona-Pekko; Haggren, Tuomas; Lipsanen, Harri [Department of Micro- and Nanosciences, Micronova, Aalto University, P.O. Box 13500, FI-00076 (Finland); Naureen, Shagufta; Shahid, Naeem [Research School of Physics & Engineering, Department of Electronic Materials Engineering, Australian National University, Canberra ACT 2601 (Australia); Jiang, Hua; Kauppinen, Esko [Department of Applied Physics and Nanomicroscopy Center, Aalto University, P.O. Box 15100, FI-00076 (Finland); Srinivasan, Anand [School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, S-164 40 Kista (Sweden)

    2016-01-15

    Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al{sub 2}O{sub 3}, GaN, and TiO{sub 2} were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al{sub 2}O{sub 3}. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al{sub 2}O{sub 3} layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al{sub 2}O{sub 3} provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

  9. Protective capping and surface passivation of III-V nanowires by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Veer Dhaka

    2016-01-01

    Full Text Available Low temperature (∼200 °C grown atomic layer deposition (ALD films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP nanowires (NWs, and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL at low temperatures (15K, and the best passivation was achieved with a few monolayer thick (2Å film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

  10. Examining the free radical bonding mechanism of benzoquinone– and hydroquinone–methanol passivation of silicon surfaces

    International Nuclear Information System (INIS)

    Kotulak, Nicole A.; Chen, Meixi; Schreiber, Nikolas; Jones, Kevin; Opila, Robert L.

    2015-01-01

    Highlights: • Photons are required for high levels of c-Si passivation by both BQ/ME and HQ/ME solutions. • Protons are required for high levels of c-Si passivation by both BQ/ME and HQ/ME solutions. • The free radical QH· is the likely passivating species for c-Si surfaces from BQ/ME and HQ/ME solutions. - Abstract: The surface passivation of p-benzoquinone (BQ) and hydroquinone (HQ) when dissolved in methanol (ME) has been examined through effective lifetime testing of crystalline silicon (c-Si) wafers treated with the aforementioned solutions. Changes in the availability of both photons and protons in the solutions were demonstrated to affect the level of passivation achieved. The requirement of both excess protons and ambient light exposure to maintain high effective lifetimes supports the presence of a free radical species that drives the surface passivation. Surface analysis suggests a 1:1 ratio of HQ-like bonds to methoxy bonds on the c-Si surface after treatment with a BQ/ME solution.

  11. An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination.

    Science.gov (United States)

    Zhao, Chao; Ng, Tien Khee; Prabaswara, Aditya; Conroy, Michele; Jahangir, Shafat; Frost, Thomas; O'Connell, John; Holmes, Justin D; Parbrook, Peter J; Bhattacharya, Pallab; Ooi, Boon S

    2015-10-28

    We present a detailed study of the effects of dangling bond passivation and the comparison of different sulfide passivation processes on the properties of InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated the first organic sulfide passivation process for nitride nanowires (NWs). The results from Raman spectroscopy, photoluminescence (PL) measurements, and X-ray photoelectron spectroscopy (XPS) showed that octadecylthiol (ODT) effectively passivated the surface states, and altered the surface dynamic charge, and thereby recovered the band-edge emission. The effectiveness of the process with passivation duration was also studied. Moreover, we also compared the electro-optical performance of NW-LEDs emitting at green wavelength before and after ODT passivation. We have shown that the Shockley-Read-Hall (SRH) non-radiative recombination of NW-LEDs can be greatly reduced after passivation by ODT, which led to a much faster increasing trend of quantum efficiency and higher peak efficiency. Our results highlighted the possibility of employing this technique to further design and produce high performance NW-LEDs and NW-lasers.

  12. An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination

    KAUST Repository

    Zhao, Chao

    2015-07-24

    We present a detailed study on the effects of dangling bond passivation and the comparison of different sulfides passivation process on the properties of InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated the first organic sulfide passivation process for nitride nanowires (NWs). The results from Raman spectroscopy, photoluminescence (PL) measurements, and X-ray photoelectron spectroscopy (XPS) showed octadecylthiol (ODT) effectively passivated the surface states, and altered the surface dynamic charge, thereby recovered the band-edge emission. The effectiveness of the process with passivation duration was also studied. Moreover, we also compared the electro-optical performance of NW-LEDs emitting at green wavelength before and after ODT passivation. We have shown that the Shockley-Read-Hall (SRH) non-radiative recombination of NW-LEDs can be greatly reduced after passivation by ODT, which led to a much faster increasing trend of quantum efficiency, and higher peak efficiency. Our results highlighted the research opportunity in employing this technique for further design and realization of high performance NW-LEDs and NW-lasers.

  13. Characterization of Al2O3 surface passivation of silicon solar cells

    International Nuclear Information System (INIS)

    Albadri, Abdulrahman M.

    2014-01-01

    A study of the passivation of silicon surface by aluminum oxide (Al 2 O 3 ) is reported. A correlation of fixed oxide charge density (Q f ) and interface trap density (D it ) on passivation efficiency is presented. Low surface recombination velocity (SRV) was obtained even by as-deposited Al 2 O 3 films and this was found to be associated to the passivation of interface states. Fourier transfer infrared spectroscopy spectra show the existence of an interfacial silicon oxide thin layer in both as-deposited and annealed Al 2 O 3 films. Q f is found positive in as-deposited films and changing to negative upon subsequent annealing, providing thus an enhancement of the passivation in p-type silicon wafers, associated to field effects. Secondary ion mass spectrometry analysis confirms the correlation between D it and hydrogen concentration at the Al 2 O 3 /Si interface. A lowest SRV of 15 cm/s was obtained after an anneal at 400 °C in nitrogen atmosphere. - Highlights: • Al 2 O 3 provides superior passivation for silicon surfaces. • Atomic layer deposition-Al 2 O 3 was deposited at a low temperature of 200 °C. • A lowest surface passivation velocity of 15 cm/s was obtained after an anneal at 400 °C in nitrogen. • As-deposited Al 2 O 3 films form very thin SiO 2 layer responsible of low interface trap densities. • High negative fixed charge density of (− 2 × 10 12 cm −2 ) was achieved upon annealing at 400 °C

  14. Passive control of flow structure interaction between a sphere and free-surface

    Directory of Open Access Journals (Sweden)

    Akilli Huseyin

    2012-04-01

    Full Text Available Flow characteristics for both a smooth and a vented sphere such as velocity vectors, patterns of streamlines, vorticity contours, stream-wise fluctuations, cross-stream velocity fluctuations and Reynolds stress correlations between a sphere and free-surface for various submerged ratio at Re =5,000 are studied by using dye visualization and the particle image velocimetry technique. Passive control of flow structure interaction between sphere and free surface was examined by using a modified geometry which has a 15% sphere diameter hole passing through the sphere equator. Both of the spheres were separately placed beneath the free surface with different positions from touching to the free surface to two sphere diameters below the free surface. It is demonstrated that reattachment point of the separated flow to the free surface varies for both of the sphere cases as the sphere position alters vertically through the water flow while the flow structure for the vented sphere occurs considerably symmetrical due to forming of a pair of counter-rotating ring vortices.

  15. Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes

    KAUST Repository

    Sun, Haiding

    2017-12-19

    Spontaneously-grown, self-aligned AlGaN nanowire ultraviolet light emitting diodes still suffer from low efficiency partially because of the strong surface recombination caused by surface states, i.e., oxidized surface and high density surface states. Several surface passivation methods have been introduced to reduce surface non-radiative recombination by using complex and toxic chemicals. Here, we present an effective method to suppress such undesirable surface recombination of the AlGaN nanowires via diluted potassium hydroxide (KOH) solution; a commonly used chemical process in semiconductor fabrication which is barely used as surface passivation solution in self-assembled nitride-based nanowires. The transmission electron microscopy investigation on the samples reveals almost intact nanowire structures after the passivation process. We demonstrated an approximately 49.7% enhancement in the ultraviolet light output power after 30-s KOH treatment on AlGaN nanowires grown on titanium-coated silicon substrates. We attribute such a remarkable enhancement to the removal of the surface dangling bonds and oxidized nitrides (Ga-O or Al-O bonds) at the surface as we observe the change of the carrier lifetime before and after the passivation. Thus, our results highlight the possibility of employing this process for the realization of high performance nanowire UV emitters.

  16. Ab-initio modeling of oxygen on the surface passivation of 3C-SiC nanostructures

    International Nuclear Information System (INIS)

    Cuevas, J.L.; Trejo, A.; Calvino, M.; Carvajal, E.; Cruz-Irisson, M.

    2012-01-01

    In this work the effect of OH on the electronic states of H-passivated 3C-SiC nanostructures, was studied by means of Density Functional Theory. We compare the electronic band structure for a [1 1 1]-oriented nanowire with total H, OH passivation and a combination of both. Also the electronic states of a porous silicon carbide case (PSiC) a C-rich pore surface in which the dangling bonds on the surface are saturated with H and OH was studied. The calculations show that the surface replacement of H with OH radicals is always energetically favorable and more stable. In all cases the OH passivation produced a similar effect than the H passivation, with electronic band gap of lower energy value than the H-terminated phase. When the OH groups are attached to C atoms, the band gap feature is changed from direct to indirect. The results indicate the possibility of band gap engineering on SiC nanostructures through the surface passivation species.

  17. Arbitrary beam control using passive lossless metasurfaces enabled by orthogonally polarized custom surface waves

    Science.gov (United States)

    Kwon, Do-Hoon; Tretyakov, Sergei A.

    2018-01-01

    For passive, lossless impenetrable metasurfaces, a design technique for arbitrary beam control of receiving, guiding, and launching is presented. Arbitrary control is enabled by a custom surface wave in an orthogonal polarization such that its addition to the incident (input) and the desired scattered (output) fields is supported by a reactive surface impedance everywhere on the reflecting surface. Such a custom surface wave (SW) takes the form of an evanescent wave propagating along the surface with a spatially varying envelope. A growing SW appears when an illuminating beam is received. The SW amplitude stays constant when power is guided along the surface. The amplitude diminishes as a propagating wave (PW) is launched from the surface as a leaky wave. The resulting reactive tensor impedance profile may be realized as an array of anisotropic metallic resonators printed on a grounded dielectric substrate. Illustrative design examples of a Gaussian beam translator-reflector, a probe-fed beam launcher, and a near-field focusing lens are provided.

  18. Layered insulator hexagonal boron nitride for surface passivation in quantum dot solar cell

    International Nuclear Information System (INIS)

    Shanmugam, Mariyappan; Jain, Nikhil; Jacobs-Gedrim, Robin; Yu, Bin; Xu, Yang

    2013-01-01

    Single crystalline, two dimensional (2D) layered insulator hexagonal boron nitride (h-BN), is demonstrated as an emerging material candidate for surface passivation on mesoporous TiO 2 . Cadmium selenide (CdSe) quantum dot based bulk heterojunction (BHJ) solar cell employed h-BN passivated TiO 2 as an electron acceptor exhibits photoconversion efficiency ∼46% more than BHJ employed unpassivated TiO 2 . Dominant interfacial recombination pathways such as electron capture by TiO 2 surface states and recombination with hole at valence band of CdSe are efficiently controlled by h-BN enabled surface passivation, leading to improved photovoltaic performance. Highly crystalline, confirmed by transmission electron microscopy, dangling bond-free 2D layered h-BN with self-terminated atomic planes, achieved by chemical exfoliation, enables efficient passivation on TiO 2 , allowing electronic transport at TiO 2 /h-BN/CdSe interface with much lower recombination rate compared to an unpassivated TiO 2 /CdSe interface

  19. Surface Passivation in Empirical Tight Binding

    OpenAIRE

    He, Yu; Tan, Yaohua; Jiang, Zhengping; Povolotskyi, Michael; Klimeck, Gerhard; Kubis, Tillmann

    2015-01-01

    Empirical Tight Binding (TB) methods are widely used in atomistic device simulations. Existing TB methods to passivate dangling bonds fall into two categories: 1) Method that explicitly includes passivation atoms is limited to passivation with atoms and small molecules only. 2) Method that implicitly incorporates passivation does not distinguish passivation atom types. This work introduces an implicit passivation method that is applicable to any passivation scenario with appropriate parameter...

  20. Passive fit and accuracy of three dental implant impression techniques.

    Science.gov (United States)

    Al Quran, Firas A; Rashdan, Bashar A; Zomar, AbdelRahman A Abu; Weiner, Saul

    2012-02-01

    To reassess the accuracy of three impression techniques relative to the passive fit of the prosthesis. An edentulous maxillary cast was fabricated in epoxy resin with four dental implants embedded and secured with heat-cured acrylic resin. Three techniques were tested: closed tray, open tray nonsplinted, and open tray splinted. One light-cured custom acrylic tray was fabricated for each impression technique, and transfer copings were attached to the implants. Fifteen impressions for each technique were prepared with medium-bodied consistency polyether. Subsequently, the impressions were poured in type IV die stone. The distances between the implants were measured using a digital micrometer. The statistical analysis of the data was performed with ANOVA and a one-sample t test at a 95% confidence interval. The lowest mean difference in dimensional accuracy was found within the direct (open tray) splinted technique. Also, the one-sample t test showed that the direct splinted technique has the least statistical significant difference from direct nonsplinted and indirect (closed tray) techniques. All discrepancies were less than 100 Μm. Within the limitations of this study, the best accuracy of the definitive prosthesis was achieved when the impression copings were splinted with autopolymerized acrylic resin, sectioned, and rejoined. However, the errors associated with all of these techniques were less than 100 Μm, and based on the current definitions of passive fit, they all would be clinically acceptable.

  1. Spontaneous passivation observations during scale formation on mild steel in CO{sub 2} brines

    Energy Technology Data Exchange (ETDEWEB)

    Han Jiabin, E-mail: jhan@lanl.gov [Institute for Corrosion and Multiphase Technology, Department of Chemical and Biomolecular Engineering, Ohio University, 342 West State Street, Athens, OH 45701 (United States); Nesic, Srdjan, E-mail: nesic@ohio.edu [Institute for Corrosion and Multiphase Technology, Department of Chemical and Biomolecular Engineering, Ohio University, 342 West State Street, Athens, OH 45701 (United States); Yang Yang; Brown, Bruce N. [Institute for Corrosion and Multiphase Technology, Department of Chemical and Biomolecular Engineering, Ohio University, 342 West State Street, Athens, OH 45701 (United States)

    2011-06-01

    Highlights: > We observed spontaneous passivation was at pH > 7. A higher open circuit potential was achieved comparing to bare surface or FeCO{sub 3} scaled surface. > Effects of pH, temperature, CO{sub 2}/FeCO{sub 3} on spontaneous passivation were systematically investigated. > TEM analysis determined the structure and chemistry of the passive film is Fe{sub 3}O{sub 4} instead of FeCO{sub 3}. > Root cause of the galvanic mechanism of localized CO{sub 2} corrosion is clarified. - Abstract: Previous study revealed localized corrosion in CO{sub 2} environments was driven by a galvanic cell established between pit surfaces and scaled surrounding area. In order to underpin the understanding of the galvanic mechanism of localized corrosion, the root cause of potential differences between these two surfaces, passivation of mild steel, in CO{sub 2} environments was investigated using transmission electron microscopy technique and electrochemical techniques including potentiodynamic polarization, cyclic polarization and open circuit potential techniques. Potentiodynamic polarization experiments showed that the passivation of the carbon steel surface favorably occurred at pH > 7 and facilitated with the presence of FeCO{sub 3} scale. Cyclic polarization tests showed that polarization rate had an important influence on passivation behavior. At a slower polarization rate, lower passivation potential and current density were observed. Spontaneous passivation was evidenced by a significant increase of corrosion resistance and an open circuit potential without any externally applied current or potential during electrode immersion. This process is affected by pH, temperature, presence of CO{sub 2} and iron carbonate. Nevertheless, iron carbonate film is not the only one responsible for passivation, as demonstrated from depassivation tests where passivity was lost without losing the existing iron carbonate film. Transmission electron microscopy technique was used to determine

  2. Multi-channel Analysis of Passive Surface Waves (MAPS)

    Science.gov (United States)

    Xia, J.; Cheng, F. Mr; Xu, Z.; Wang, L.; Shen, C.; Liu, R.; Pan, Y.; Mi, B.; Hu, Y.

    2017-12-01

    Urbanization is an inevitable trend in modernization of human society. In the end of 2013 the Chinese Central Government launched a national urbanization plan—"Three 100 Million People", which aggressively and steadily pushes forward urbanization. Based on the plan, by 2020, approximately 100 million people from rural areas will permanently settle in towns, dwelling conditions of about 100 million people in towns and villages will be improved, and about 100 million people in the central and western China will permanently settle in towns. China's urbanization process will run at the highest speed in the urbanization history of China. Environmentally friendly, non-destructive and non-invasive geophysical assessment method has played an important role in the urbanization process in China. Because human noise and electromagnetic field due to industrial life, geophysical methods already used in urban environments (gravity, magnetics, electricity, seismic) face great challenges. But humanity activity provides an effective source of passive seismic methods. Claerbout pointed out that wavefileds that are received at one point with excitation at the other point can be reconstructed by calculating the cross-correlation of noise records at two surface points. Based on this idea (cross-correlation of two noise records) and the virtual source method, we proposed Multi-channel Analysis of Passive Surface Waves (MAPS). MAPS mainly uses traffic noise recorded with a linear receiver array. Because Multi-channel Analysis of Surface Waves can produces a shear (S) wave velocity model with high resolution in shallow part of the model, MPAS combines acquisition and processing of active source and passive source data in a same flow, which does not require to distinguish them. MAPS is also of ability of real-time quality control of noise recording that is important for near-surface applications in urban environment. The numerical and real-world examples demonstrated that MAPS can be

  3. Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Maggioni, G., E-mail: maggioni@lnl.infn.it [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Carturan, S. [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Fiorese, L. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Dipartimento di Ingegneria dei Materiali e delle Tecnologie Industriali, Università di Trento, Via Mesiano 77, I-38050 Povo, Trento (Italy); Pinto, N.; Caproli, F. [Scuola di Scienze e Tecnologie, Sezione di Fisica, Università di Camerino, Via Madonna delle Carceri 9, Camerino (Italy); INFN, Sezione di Perugia, Perugia (Italy); Napoli, D.R. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Giarola, M.; Mariotto, G. [Dipartimento di Informatica—Università di Verona, Strada le Grazie 15, I-37134 Verona (Italy)

    2017-01-30

    Highlights: • A surface passivation method for HPGe radiation detectors is proposed. • Highly insulating GeNx- and GeOxNy-based layers are deposited at room temperature. • Deposition parameters affect composition and electrical properties of the layers. • The improved performance of a GeNx-coated HPGe diode is assessed. - Abstract: This work reports a detailed investigation of the properties of germanium nitride and oxynitride films to be applied as passivation layers to Ge radiation detectors. All the samples were deposited at room temperature by reactive RF magnetron sputtering. A strong correlation was found between the deposition parameters, such as deposition rate, substrate bias and atmosphere composition, and the oxygen and nitrogen content in the film matrix. We found that all the films were very poorly crystallized, consisting of very small Ge nitride and oxynitride nanocrystallites, and electrically insulating, with the resistivity changing from three to six orders of magnitude as a function of temperature. A preliminary test of these films as passivation layers was successfully performed by depositing a germanium nitride film on the intrinsic surface of a high-purity germanium (HPGe) diode and measuring the improved performance, in terms of leakage current, with respect to a reference passivated diode. All these interesting results allow us to envisage the application of this coating technology to the surface passivation of germanium-based radiation detectors.

  4. Potential dependence of surface crystal structure of iron passive films in borate buffer solution

    International Nuclear Information System (INIS)

    Deng, Huihua; Nanjo, Hiroshi; Qian, Pu; Santosa, Arifin; Ishikawa, Ikuo; Kurata, Yoshiaki

    2007-01-01

    The effect of passivation potential on surface crystal structure, apparent thickness and passivity of oxide films formed on pure iron prepared by plasma sputter deposition was investigated. The crystallinity was improved with passivation potential and the width of atomically flat terraces was expanded to 6 nm when passivating at 750 mV for 15 min, as observed by ex situ scanning tunneling microscopy (STM) after aging in air (<30% RH). Apparent thickness and passivity are linearly dependent on passivation potential. The former weakly depends on passivation duration, the latter strongly depends on passivation duration. This is well explained by the correlation between crystal structure and passivity

  5. Surface correlation behaviors of metal-organic Langmuir-Blodgett films on differently passivated Si(001) surfaces

    Science.gov (United States)

    Bal, J. K.; Kundu, Sarathi

    2013-03-01

    Langmuir-Blodgett films of standard amphiphilic molecules like nickel arachidate and cadmium arachidate are grown on wet chemically passivated hydrophilic (OH-Si), hydrophobic (H-Si), and hydrophilic plus hydrophobic (Br-Si) Si(001) surfaces. Top surface morphologies and height-difference correlation functions g(r) with in-plane separation (r) are obtained from the atomic force microscopy studies. Our studies show that deposited bilayer and trilayer films have self-affine correlation behavior irrespective of different passivations and different types of amphiphilic molecules, however, liquid like correlation coexists only for a small part of r, which is located near the cutoff length (1/κ) or little below the correlation length ξ obtained from the liquid like and self-affine fitting, respectively. Thus, length scale dependent surface correlation behavior is observed for both types of Langmuir-Blodgett films. Metal ion specific interactions (ionic, covalent, etc.,) in the headgroup and the nature of the terminated bond (polar, nonpolar, etc.,) of Si surface are mainly responsible for having different correlation parameters.

  6. Passivity and passivity breakdown of 304L stainless steel in hot and concentrated nitric acid

    International Nuclear Information System (INIS)

    Gillard-Tcharkhtchi, Elsa

    2014-01-01

    The objective of this study is to characterize the oxidation behavior of 304L stainless steel (SS) in representative conditions of spent nuclear fuel reprocessing, i.e. in hot and concentrated nitric acid. In these conditions the SS electrochemical potential is in the passive domain and its corrosion rate is low. However when the media becomes more aggressive, the potential may be shifted towards the trans-passive domain characterized with a high corrosion rate. Passivity and passivity breakdown in the trans-passive domain are of a major interest for the industry. So as to characterize these phenomenons, this work was undertaken with the following representative conditions: a 304L SS from an industrial sheet was studied, the media was hot and concentrated HNO 3 , long term tests were performed. First, the surface of an immersed 304L SS was characterized with several complementary techniques from the micro to the nanometer scale. Then oxidation kinetics was studied in the passive and in the trans-passive domain. The oxidation behavior was studied thanks to weight loss determination and surface analysis. Finally, oxidation evolution as a function of the potential was studied from the passive to the trans-passive domain. In particular, this allowed us to obtain the anodic curve of 304L SS in hot and concentrated and to define precisely the 304L SS limits of in such conditions. (author) [fr

  7. Advanced passivation techniques for Si solar cells with high-κ dielectric materials

    International Nuclear Information System (INIS)

    Geng, Huijuan; Lin, Tingjui; Letha, Ayra Jagadhamma; Hwang, Huey-Liang; Kyznetsov, Fedor A.; Smirnova, Tamara P.; Saraev, Andrey A.; Kaichev, Vasily V.

    2014-01-01

    Electronic recombination losses at the wafer surface significantly reduce the efficiency of Si solar cells. Surface passivation using a suitable thin dielectric layer can minimize the recombination losses. Herein, advanced passivation using simple materials (Al 2 O 3 , HfO 2 ) and their compounds H (Hf) A (Al) O deposited by atomic layer deposition (ALD) was investigated. The chemical composition of Hf and Al oxide films were determined by X-ray photoelectron spectroscopy (XPS). The XPS depth profiles exhibit continuous uniform dense layers. The ALD-Al 2 O 3 film has been found to provide negative fixed charge (−6.4 × 10 11  cm −2 ), whereas HfO 2 film provides positive fixed charge (3.2 × 10 12  cm −2 ). The effective lifetimes can be improved after oxygen gas annealing for 1 min. I-V characteristics of Si solar cells with high-κ dielectric materials as passivation layers indicate that the performance is significantly improved, and ALD-HfO 2 film would provide better passivation properties than that of the ALD-Al 2 O 3 film in this research work.

  8. Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

    KAUST Repository

    Chroneos, Alexander I.; Schwingenschlö gl, Udo; Dimoulas, Athanasios Dimoulas

    2012-01-01

    in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices

  9. A Low-Cost Energy-Efficient Cableless Geophone Unit for Passive Surface Wave Surveys.

    Science.gov (United States)

    Dai, Kaoshan; Li, Xiaofeng; Lu, Chuan; You, Qingyu; Huang, Zhenhua; Wu, H Felix

    2015-09-25

    The passive surface wave survey is a practical, non-invasive seismic exploration method that has increasingly been used in geotechnical engineering. However, in situ deployment of traditional wired geophones is labor intensive for a dense sensor array. Alternatively, stand-alone seismometers can be used, but they are bulky, heavy, and expensive because they are usually designed for long-term monitoring. To better facilitate field applications of the passive surface wave survey, a low-cost energy-efficient geophone system was developed in this study. The hardware design is presented in this paper. To validate the system's functionality, both laboratory and field experiments were conducted. The unique feature of this newly-developed cableless geophone system allows for rapid field applications of the passive surface wave survey with dense array measurements.

  10. Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

    KAUST Repository

    Chroneos, Alexander I.

    2012-01-26

    In recent years germanium has been emerging as a mainstream material that could have important applications in the microelectronics industry. The principle aim of this study is to review investigations of the diffusion of technologically important p- and n-type dopants as well as surface and interface passivation issues in germanium. The diffusion of impurities in germanium is interrelated to the formation of clusters whenever possible, and possibilities for point defect engineering are discussed in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Adsorption of molecular additive onto lead halide perovskite surfaces: A computational study on Lewis base thiophene additive passivation

    Science.gov (United States)

    Zhang, Lei; Yu, Fengxi; Chen, Lihong; Li, Jingfa

    2018-06-01

    Organic additives, such as the Lewis base thiophene, have been successfully applied to passivate halide perovskite surfaces, improving the stability and properties of perovskite devices based on CH3NH3PbI3. Yet, the detailed nanostructure of the perovskite surface passivated by additives and the mechanisms of such passivation are not well understood. This study presents a nanoscopic view on the interfacial structure of an additive/perovskite interface, consisting of a Lewis base thiophene molecular additive and a lead halide perovskite surface substrate, providing insights on the mechanisms that molecular additives can passivate the halide perovskite surfaces and enhance the perovskite-based device performance. Molecular dynamics study on the interactions between water molecules and the perovskite surfaces passivated by the investigated additive reveal the effectiveness of employing the molecular additives to improve the stability of the halide perovskite materials. The additive/perovskite surface system is further probed via molecular engineering the perovskite surfaces. This study reveals the nanoscopic structure-property relationships of the halide perovskite surface passivated by molecular additives, which helps the fundamental understanding of the surface/interface engineering strategies for the development of halide perovskite based devices.

  12. Surface Passivation in Empirical Tight Binding

    Science.gov (United States)

    He, Yu; Tan, Yaohua; Jiang, Zhengping; Povolotskyi, Michael; Klimeck, Gerhard; Kubis, Tillmann

    2016-03-01

    Empirical Tight Binding (TB) methods are widely used in atomistic device simulations. Existing TB methods to passivate dangling bonds fall into two categories: 1) Method that explicitly includes passivation atoms is limited to passivation with atoms and small molecules only. 2) Method that implicitly incorporates passivation does not distinguish passivation atom types. This work introduces an implicit passivation method that is applicable to any passivation scenario with appropriate parameters. This method is applied to a Si quantum well and a Si ultra-thin body transistor oxidized with SiO2 in several oxidation configurations. Comparison with ab-initio results and experiments verifies the presented method. Oxidation configurations that severely hamper the transistor performance are identified. It is also shown that the commonly used implicit H atom passivation overestimates the transistor performance.

  13. Reverse Non-Equilibrium Molecular Dynamics Demonstrate That Surface Passivation Controls Thermal Transport at Semiconductor-Solvent Interfaces.

    Science.gov (United States)

    Hannah, Daniel C; Gezelter, J Daniel; Schaller, Richard D; Schatz, George C

    2015-06-23

    We examine the role played by surface structure and passivation in thermal transport at semiconductor/organic interfaces. Such interfaces dominate thermal transport in semiconductor nanomaterials owing to material dimensions much smaller than the bulk phonon mean free path. Utilizing reverse nonequilibrium molecular dynamics simulations, we calculate the interfacial thermal conductance (G) between a hexane solvent and chemically passivated wurtzite CdSe surfaces. In particular, we examine the dependence of G on the CdSe slab thickness, the particular exposed crystal facet, and the extent of surface passivation. Our results indicate a nonmonotonic dependence of G on ligand-grafting density, with interfaces generally exhibiting higher thermal conductance for increasing surface coverage up to ∼0.08 ligands/Å(2) (75-100% of a monolayer, depending on the particular exposed facet) and decreasing for still higher coverages. By analyzing orientational ordering and solvent penetration into the ligand layer, we show that a balance of competing effects is responsible for this nonmonotonic dependence. Although the various unpassivated CdSe surfaces exhibit similar G values, the crystal structure of an exposed facet nevertheless plays an important role in determining the interfacial thermal conductance of passivated surfaces, as the density of binding sites on a surface determines the ligand-grafting densities that may ultimately be achieved. We demonstrate that surface passivation can increase G relative to a bare surface by roughly 1 order of magnitude and that, for a given extent of passivation, thermal conductance can vary by up to a factor of ∼2 between different surfaces, suggesting that appropriately tailored nanostructures may direct heat flow in an anisotropic fashion for interface-limited thermal transport.

  14. The Role of Surface Passivation in Controlling Ge Nanowire Faceting.

    Science.gov (United States)

    Gamalski, A D; Tersoff, J; Kodambaka, S; Zakharov, D N; Ross, F M; Stach, E A

    2015-12-09

    In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. These results illustrate the essential roles of the precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, ⟨111⟩-oriented nanowires.

  15. Optical and electrical study of CdZnTe surfaces passivated by KOH and NH{sub 4}F solutions

    Energy Technology Data Exchange (ETDEWEB)

    Zázvorka, J., E-mail: zazvorka.jakub@gmail.com [Institute of Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague (Czech Republic); Franc, J.; Statelov, M.; Pekárek, J.; Veis, M.; Moravec, P. [Institute of Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague (Czech Republic); Mašek, K. [Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University in Prague, V Holešovičkách 2, CZ, 18000 Prague (Czech Republic)

    2016-12-15

    Highlights: • Surface of CdZnTe samples was passivated after chemical etching. • KOH and NH{sub 4}F solutions were used as passivation agents. • Growth of surface oxide after passivation is observed. • Surface oxide thickness was evaluated over time after chemical treatment. • Oxidation of the sample correlates with decreased leakage current. - Abstract: Performance of CdZnTe-based detectors is highly related to surface preparation. Mechanical polishing, chemical etching and passivation are routinely employed for this purpose. However, the relation between these processes and the detector performance in terms of underlying physical phenomena has not been fully explained. The dynamics and properties of CdZnTe surface oxide layers, created by passivation with KOH and NH4F/H2O2 solutions, were studied by optical ellipsometry and X-ray photoelectron spectroscopy (XPS). Thicknesses and growth rates of the surface oxide layers differed for each of the passivation methods. Leakage currents which influence the final spectral resolution of the detector were measured simultaneously with ellipsometry. Results of both optical and electrical investigation showed the same trends in the time evolution and correlated to each other. NH4F/H2O2 passivation showed to be a method which produces the most desirable properties of the surface oxide layer.

  16. 2D layered insulator hexagonal boron nitride enabled surface passivation in dye sensitized solar cells.

    Science.gov (United States)

    Shanmugam, Mariyappan; Jacobs-Gedrim, Robin; Durcan, Chris; Yu, Bin

    2013-11-21

    A two-dimensional layered insulator, hexagonal boron nitride (h-BN), is demonstrated as a new class of surface passivation materials in dye-sensitized solar cells (DSSCs) to reduce interfacial carrier recombination. We observe ~57% enhancement in the photo-conversion efficiency of the DSSC utilizing h-BN coated semiconductor TiO2 as compared with the device without surface passivation. The h-BN coated TiO2 is characterized by Raman spectroscopy to confirm the presence of highly crystalline, mixed monolayer/few-layer h-BN nanoflakes on the surface of TiO2. The passivation helps to minimize electron-hole recombination at the TiO2/dye/electrolyte interfaces. The DSSC with h-BN passivation exhibits significantly lower dark saturation current in the low forward bias region and higher saturation in the high forward bias region, respectively, suggesting that the interface quality is largely improved without impeding carrier transport at the material interface. The experimental results reveal that the emerging 2D layered insulator could be used for effective surface passivation in solar cell applications attributed to desirable material features such as high crystallinity and self-terminated/dangling-bond-free atomic planes as compared with high-k thin-film dielectrics.

  17. Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

    Science.gov (United States)

    Macinnes, Andrew N.; Jenkins, Phillip P.; Power, Michael B.; Kang, Soon; Barron, Andrew R.; Hepp, Aloysius F.; Tabib-Azar, Massood

    1994-01-01

    Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

  18. Potassium ions in SiO2: electrets for silicon surface passivation

    Science.gov (United States)

    Bonilla, Ruy S.; Wilshaw, Peter R.

    2018-01-01

    This manuscript reports an experimental and theoretical study of the transport of potassium ions in thin silicon dioxide films. While alkali contamination was largely researched in the context of MOSFET instability, recent reports indicate that potassium ions can be embedded into oxide films to produce dielectric materials with permanent electric charge, also known as electrets. These electrets are integral to a number of applications, including the passivation of silicon surfaces for optoelectronic devices. In this work, electric field assisted migration of ions is used to rapidly drive K+ into SiO2 and produce effective passivation of silicon surfaces. Charge concentrations of up to ~5  ×  1012 e cm-2 have been achieved. This charge was seen to be stable for over 1500 d, with decay time constants as high as 17 000 d, producing an effectively passivated oxide-silicon interface with SRV  industrial manufacture of silicon optoelectronic devices.

  19. Surface Passivation of CIGS Solar Cells Using Gallium Oxide

    KAUST Repository

    Garud, Siddhartha

    2018-02-27

    This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5 nm passivation layer show an substantial absolute improvement of 56 mV in open-circuit voltage (VOC), 1 mA cm−2 in short-circuit current density (JSC), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).

  20. Surface passivation for tight-binding calculations of covalent solids

    International Nuclear Information System (INIS)

    Bernstein, N

    2007-01-01

    Simulation of a cluster representing a finite portion of a larger covalently bonded system requires the passivation of the cluster surface. We compute the effects of an explicit hybrid orbital passivation (EHOP) on the atomic structure in a model bulk, three-dimensional, narrow gap semiconductor, which is very different from the wide gap, quasi-one-dimensional organic molecules where most passivation schemes have been studied in detail. The EHOP approach is directly applicable to minimal atomic orbital basis methods such as tight-binding. Each broken bond is passivated by a hybrid created from an explicitly expressed linear combination of basis orbitals, chosen to represent the contribution of the missing neighbour, e.g. a sp 3 hybrid for a single bond. The method is tested by computing the forces on atoms near a point defect as a function of cluster geometry. We show that, compared to alternatives such as pseudo-hydrogen passivation, the force on an atom converges to the correct bulk limit more quickly as a function of cluster radius, and that the force is more stable with respect to perturbations in the position of the cluster centre. The EHOP method also obviates the need for parameterizing the interactions between the system atoms and the passivating atoms. The method is useful for cluster calculations of non-periodic defects in large systems and for hybrid schemes that simulate large systems by treating finite regions with a quantum-mechanical model, coupled to an interatomic potential description of the rest of the system

  1. Silicon surface passivation by PEDOT: PSS functionalized by SnO2 and TiO2 nanoparticles.

    Science.gov (United States)

    García-Tecedor, M; Karazhanov, S Zh; Vásquez, G C; Haug, H; Maestre, D; Cremades, A; Taeño, M; Ramírez-Castellanos, J; González-Calbet, J M; Piqueras, J; You, C C; Marstein, E S

    2018-01-19

    In this paper, we present a study of silicon surface passivation based on the use of spin-coated hybrid composite layers. We investigate both undoped poly(3,4-ethylenedioxythiophene)/poly-(styrenesulfonate) (PEDOT:PSS), as well as PEDOT:PSS functionalized with semiconducting oxide nanomaterials (TiO 2 and SnO 2 ). The hybrid compound was deposited at room temperature by spin coating-a potentially lower cost, lower processing time and higher throughput alternative compared with the commonly used vacuum-based techniques. Photoluminescence imaging was used to characterize the electronic properties of the Si/PEDOT:PSS interface. Good surface passivation was achieved by PEDOT:PSS functionalized by semiconducting oxides. We show that control of the concentration of semiconducting oxide nanoparticles in the polymer is crucial in determining the passivation performance. A charge carrier lifetime of about 275 μs has been achieved when using SnO 2 nanoparticles at a concentration of 0.5 wt.% as a filler in the composite film. X-ray diffraction (XRD), scanning electron microscopy, high resolution transmission electron microscopy (HRTEM), energy dispersive x-ray in an SEM, and μ-Raman spectroscopy have been used for the morphological, chemical and structural characterization. Finally, a simple model of a photovoltaic device based on PEDOT:PSS functionalized with semiconducting oxide nanoparticles has been fabricated and electrically characterized.

  2. Behind the Nature of Titanium Oxide Excellent Surface Passivation and Carrier Selectivity of c-Si

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym; Crovetto, Andrea; Hansen, Ole

    We present an expanded study of the passivation properties of titanium dioxide (TiO2) on p-type crystalline silicon (c-Si). We report a low surface recombination velocity (16 cm/s) for TiO2 passivation layers with a thin tunnelling oxide interlayer (SiO2 or Al2O3) on p-type crystalline silicon (c-Si......), and post-deposition annealing temperature were investigated. We have observed that that SiO2 and Al2O3 interlayers enhance the TiO2 passivation of c-Si. TiO2 thin film passivation layers alone result in lower effective carrier lifetime. Further annealing at 200  ̊C in N2 gas enhances the surface...

  3. Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

    International Nuclear Information System (INIS)

    Focsa, A.; Slaoui, A.; Charifi, H.; Stoquert, J.P.; Roques, S.

    2009-01-01

    Surface passivation of bare silicon or emitter region is of great importance towards high efficiency solar cells. Nowadays, this is usually accomplished by depositing an hydrogenated amorphous silicon nitride (a-SiNx:H) layer on n + p structures that serves also as an excellent antireflection layer. On the other hand, surface passivation of p-type silicon is better assured by an hydrogenated amorphous silicon (a-Si:H) layer but suffers from optical properties. In this paper, we reported the surface passivation of p-type and n-type silicon wafers by using an a-Si:H/SiNx:H double layer formed at low temperature (50-400 deg. C) with ECR-PECVD technique. We first investigated the optical properties (refraction index, reflectance, and absorbance) and structural properties by FTIR (bonds Si-H, N-H) of the deposited films. The hydrogen content in the layers was determined by elastic recoil detection analysis (ERDA). The passivation effect was monitored by measuring the minority carrier effective lifetime vs. different parameters such as deposition temperature and amorphous silicon layer thickness. We have found that a 10-15 nm a-Si film with an 86 nm thick SiN layer provides an optimum of the minority carriers' lifetime. It increases from an initial value of about 50-70 μs for a-Si:H to about 760 and 800 μs for a-Si:H/SiNx:H on Cz-pSi and FZ-nSi, respectively, at an injection level 2 x 10 15 cm -3 . The effective surface recombination velocity, S eff , for passivated double layer on n-type FZ Si reached 11 cm/s and for FZ-pSi-14 cm/s, and for Cz-pSi-16-20 cm/s. Effect of hydrogen in the passivation process is discussed.

  4. Accelerometer Sensor Specifications to Predict Hydrocarbon Using Passive Seismic Technique

    Directory of Open Access Journals (Sweden)

    M. H. Md Khir

    2016-01-01

    Full Text Available The ambient seismic ground noise has been investigated in several surveys worldwide in the last 10 years to verify the correlation between observed seismic energy anomalies at the surface and the presence of hydrocarbon reserves beneath. This is due to the premise that anomalies provide information about the geology and potential presence of hydrocarbon. However a technology gap manifested in nonoptimal detection of seismic signals of interest is observed. This is due to the fact that available sensors are not designed on the basis of passive seismic signal attributes and mainly in terms of amplitude and bandwidth. This is because of that fact that passive seismic acquisition requires greater instrumentation sensitivity, noise immunity, and bandwidth, with active seismic acquisition, where vibratory or impulsive sources were utilized to receive reflections through geophones. Therefore, in the case of passive seismic acquisition, it is necessary to select the best monitoring equipment for its success or failure. Hence, concerning sensors performance, this paper highlights the technological gap and motivates developing dedicated sensors for optimal solution at lower frequencies. Thus, the improved passive seismic recording helps in oil and gas industry to perform better fracture mapping and identify more appropriate stratigraphy at low frequencies.

  5. The protective nature of passivation films on zinc: surface charge

    International Nuclear Information System (INIS)

    Muster, Tim H.; Cole, Ivan S.

    2004-01-01

    The influence of oxide surface charge on the corrosion performance of zinc metals was investigated. Oxidised zinc species (zinc oxide, zinc hydroxychloride, zinc hydroxysulfate and zinc hydroxycarbonate) with chemical compositions similar to those produced on zinc during atmospheric corrosion were formed as particles from aqueous solution, and as passive films deposited onto zinc powder, and rolled zinc, surfaces. Synthesized oxides were characterised by X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy and electron probe X-ray microanalysis. The zeta potentials of various oxide particles, as determined by microelectrophoresis, are reported as a function of pH. Particulates containing a majority of zinc hydroxycarbonate and zinc hydroxysulfate crystallites were found to possess a negative surface charge below pH 6, whilst zinc oxide-hydroxide and zinc hydroxychloride crystallites possessed isoelectric points (IEP's) higher than pH 8. The ability of chloride species to pass through a bed of 3 μm diameter zinc powder was found to increase for surfaces possessing carboxy and sulfate surface species, suggesting that negatively charged surfaces can aid in the repulsion of chloride ions. Electrochemical analysis of the open-circuit potential as a function of time at a fixed pH of 6.5 showed that the chemical composition of passive films on zinc plates influenced the ability of chloride ions to access anodic sites for periods of approximately 1 h

  6. Surface Passivation of GaN Nanowires for Enhanced Photoelectrochemical Water-Splitting.

    Science.gov (United States)

    Varadhan, Purushothaman; Fu, Hui-Chun; Priante, Davide; Retamal, Jose Ramon Duran; Zhao, Chao; Ebaid, Mohamed; Ng, Tien Khee; Ajia, Idirs; Mitra, Somak; Roqan, Iman S; Ooi, Boon S; He, Jr-Hau

    2017-03-08

    Hydrogen production via photoelectrochemical water-splitting is a key source of clean and sustainable energy. The use of one-dimensional nanostructures as photoelectrodes is desirable for photoelectrochemical water-splitting applications due to the ultralarge surface areas, lateral carrier extraction schemes, and superior light-harvesting capabilities. However, the unavoidable surface states of nanostructured materials create additional charge carrier trapping centers and energy barriers at the semiconductor-electrolyte interface, which severely reduce the solar-to-hydrogen conversion efficiency. In this work, we address the issue of surface states in GaN nanowire photoelectrodes by employing a simple and low-cost surface treatment method, which utilizes an organic thiol compound (i.e., 1,2-ethanedithiol). The surface-treated photocathode showed an enhanced photocurrent density of -31 mA/cm 2 at -0.2 V versus RHE with an incident photon-to-current conversion efficiency of 18.3%, whereas untreated nanowires yielded only 8.1% efficiency. Furthermore, the surface passivation provides enhanced photoelectrochemical stability as surface-treated nanowires retained ∼80% of their initial photocurrent value and produced 8000 μmol of gas molecules over 55 h at acidic conditions (pH ∼ 0), whereas the untreated nanowires demonstrated only passivation of nanostructured photoelectrodes for photoelectrochemical applications.

  7. Sulfur as a surface passivation for InP

    Science.gov (United States)

    Iyer, R.; Chang, R. R.; Lile, D. L.

    1988-01-01

    The use of liquid and gas phase sulfur pretreatment of the surface of InP as a way to form a near-ideal passivated surface prior to chemical vapor deposition of SiO2 was investigated. Results of high-frequency and quasi-static capacitance-voltage measurements, as well as enhancement mode insulated gate field-effect transistor (FET) transductance and drain current stability studies, all support the efficacy of this approach for metal-insulator-semiconductor application of this semiconductor. In particular, surface state values in the range of 10 to the 10th to a few 10 to the 11th/sq cm per eV and enhancement mode FET drain current drifts of less than 5 percent over a 12 h test period were measured.

  8. Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells

    Directory of Open Access Journals (Sweden)

    Ing-Song Yu

    2013-01-01

    Full Text Available Atomic layer deposition, a method of excellent step coverage and conformal deposition, was used to deposit TiO2 thin films for the surface passivation and antireflection coating of silicon solar cells. TiO2 thin films deposited at different temperatures (200°C, 300°C, 400°C, and 500°C on FZ n-type silicon wafers are in the thickness of 66.4 nm ± 1.1 nm and in the form of self-limiting growth. For the properties of surface passivation, Si surface is effectively passivated by the 200°C deposition TiO2 thin film. Its effective minority carrier lifetime, measured by the photoconductance decay method, is improved 133% at the injection level of  cm−3. Depending on different deposition parameters and annealing processes, we can control the crystallinity of TiO2 and find low-temperature TiO2 phase (anatase better passivation performance than the high-temperature one (rutile, which is consistent with the results of work function measured by Kelvin probe. In addition, TiO2 thin films on polished Si wafer serve as good ARC layers with refractive index between 2.13 and 2.44 at 632.8 nm. Weighted average reflectance at AM1.5G reduces more than half after the deposition of TiO2. Finally, surface passivation and antireflection properties of TiO2 are stable after the cofire process of conventional crystalline Si solar cells.

  9. Nitridation of SiO2 for surface passivation

    Science.gov (United States)

    Lai, S. K. C.

    1985-01-01

    An attempt is made to relate the electrical properties of silicon dioxide film to the process history. A model is proposed to explain some of the observed results. It is shown that with our present knowledge of the dielectric, silicon dioxide film shows a lot of promise for its use in surface passivation, both for its resistance to impurity diffusion and for its resistance to radiation damage effects.

  10. Low temperature surface passivation of crystalline silicon and its application to interdigitated back contact silicon heterojunction (ibc-shj) solar cell

    Science.gov (United States)

    Shu, Zhan

    With the absence of shading loss together with improved quality of surface passivation introduced by low temperature processed amorphous silicon crystalline silicon (a-Si:H/c-Si) heterojunction, the interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell exhibits a potential for higher conversion efficiency and lower cost than a traditional front contact diffused junction solar cell. In such solar cells, the front surface passivation is of great importance to achieve both high open-circuit voltage (Voc) and short-circuit current (Jsc). Therefore, the motivation of this work is to develop a low temperature processed structure for the front surface passivation of IBC-SHJ solar cells, which must have an excellent and stable passivation quality as well as a good anti-reflection property. Four different thin film materials/structures were studied and evaluated for this purpose, namely: amorphous silicon nitride (a-SiNx:H), thick amorphous silicon film (a-Si:H), amorphous silicon/silicon nitride/silicon carbide (a-Si:H/a-SiN x:H/a-SiC:H) stack structure with an ultra-thin a-Si:H layer, and zinc sulfide (ZnS). It was demonstrated that the a-Si:H/a-SiNx:H/a-SiC:H stack surpasses other candidates due to both of its excellent surface passivation quality (SRVSi surface is found to be resulted from (i) field effect passivation due to the positive fixed charge (Q fix~1x1011 cm-2 with 5 nm a-Si:H layer) in a-SiNx:H as measured from capacitance-voltage technique, and (ii) reduced defect state density (mid-gap Dit~4x1010 cm-2eV-1) at a-Si:H/c-Si interface provided by a 5 nm thick a-Si:H layer, as characterized by conductance-frequency measurements. Paralleled with the experimental studies, a computer program was developed in this work based on the extended Shockley-Read-Hall (SRH) model of surface recombination. With the help of this program, the experimental injection level dependent SRV curves of the stack passivated c-Si samples were successfully reproduced and

  11. Enhanced photoelectrochemical water splitting performance of anodic TiO(2) nanotube arrays by surface passivation.

    Science.gov (United States)

    Gui, Qunfang; Xu, Zhen; Zhang, Haifeng; Cheng, Chuanwei; Zhu, Xufei; Yin, Min; Song, Ye; Lu, Linfeng; Chen, Xiaoyuan; Li, Dongdong

    2014-10-08

    One-dimensional anodic titanium oxide nanotube (TONT) arrays provide a direct pathway for charge transport, and thus hold great potential as working electrodes for electrochemical energy conversion and storage devices. However, the prominent surface recombination due to the large amount surface defects hinders the performance improvement. In this work, the surface states of TONTs were passivated by conformal coating of high-quality Al2O3 onto the tubular structures using atomic layer deposition (ALD). The modified TONT films were subsequently employed as anodes for photoelectrochemical (PEC) water splitting. The photocurrent (0.5 V vs Ag/AgCl) recorded under air mass 1.5 global illumination presented 0.8 times enhancement on the electrode with passivation coating. The reduction of surface recombination rate is responsible for the substantially improved performance, which is proposed to have originated from a decreased interface defect density in combination with a field-effect passivation induced by a negative fixed charge in the Al2O3 shells. These results not only provide a physical insight into the passivation effect, but also can be utilized as a guideline to design other energy conversion devices.

  12. Surface Passivation of GaN Nanowires for Enhanced Photoelectrochemical Water-Splitting

    KAUST Repository

    Varadhan, Purushothaman; Fu, Hui-chun; Priante, Davide; Duran Retamal, Jose Ramon; Zhao, Chao; Ebaid, Mohamed; Ng, Tien Khee; Ajia, Idris A.; Mitra, Somak; Roqan, Iman S.; Ooi, Boon S.; He, Jr-Hau

    2017-01-01

    Hydrogen production via photoelectrochemical water-splitting is a key source of clean and sustainable energy. The use of one-dimensional nanostructures as photoelectrodes is desirable for photoelectrochemical water-splitting applications due to the ultralarge surface areas, lateral carrier extraction schemes, and superior light-harvesting capabilities. However, the unavoidable surface states of nanostructured materials create additional charge carrier trapping centers and energy barriers at the semiconductor-electrolyte interface, which severely reduce the solar-to-hydrogen conversion efficiency. In this work, we address the issue of surface states in GaN nanowire photoelectrodes by employing a simple and low-cost surface treatment method, which utilizes an organic thiol compound (i.e., 1,2-ethanedithiol). The surface-treated photocathode showed an enhanced photocurrent density of −31 mA/cm at −0.2 V versus RHE with an incident photon-to-current conversion efficiency of 18.3%, whereas untreated nanowires yielded only 8.1% efficiency. Furthermore, the surface passivation provides enhanced photoelectrochemical stability as surface-treated nanowires retained ∼80% of their initial photocurrent value and produced 8000 μmol of gas molecules over 55 h at acidic conditions (pH ∼ 0), whereas the untreated nanowires demonstrated only <4 h of photoelectrochemical stability. These findings shed new light on the importance of surface passivation of nanostructured photoelectrodes for photoelectrochemical applications.

  13. Surface Passivation of GaN Nanowires for Enhanced Photoelectrochemical Water-Splitting

    KAUST Repository

    Varadhan, Purushothaman

    2017-02-08

    Hydrogen production via photoelectrochemical water-splitting is a key source of clean and sustainable energy. The use of one-dimensional nanostructures as photoelectrodes is desirable for photoelectrochemical water-splitting applications due to the ultralarge surface areas, lateral carrier extraction schemes, and superior light-harvesting capabilities. However, the unavoidable surface states of nanostructured materials create additional charge carrier trapping centers and energy barriers at the semiconductor-electrolyte interface, which severely reduce the solar-to-hydrogen conversion efficiency. In this work, we address the issue of surface states in GaN nanowire photoelectrodes by employing a simple and low-cost surface treatment method, which utilizes an organic thiol compound (i.e., 1,2-ethanedithiol). The surface-treated photocathode showed an enhanced photocurrent density of −31 mA/cm at −0.2 V versus RHE with an incident photon-to-current conversion efficiency of 18.3%, whereas untreated nanowires yielded only 8.1% efficiency. Furthermore, the surface passivation provides enhanced photoelectrochemical stability as surface-treated nanowires retained ∼80% of their initial photocurrent value and produced 8000 μmol of gas molecules over 55 h at acidic conditions (pH ∼ 0), whereas the untreated nanowires demonstrated only <4 h of photoelectrochemical stability. These findings shed new light on the importance of surface passivation of nanostructured photoelectrodes for photoelectrochemical applications.

  14. Surface science techniques

    CERN Document Server

    Bracco, Gianangelo

    2013-01-01

    The book describes the experimental techniques employed to study surfaces and interfaces. The emphasis is on the experimental method. Therefore all chapters start with an introduction of the scientific problem, the theory necessary to understand how the technique works and how to understand the results. Descriptions of real experimental setups, experimental results at different systems are given to show both the strength and the limits of the technique. In a final part the new developments and possible extensions of the techniques are presented. The included techniques provide microscopic as well as macroscopic information. They cover most of the techniques used in surface science.

  15. Fluid phase passivation and polymer encapsulation of InP/InGaAs heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Oxland, R K; Rahman, F

    2008-01-01

    This paper reports on the development of effective passivation techniques for improving and stabilizing the characteristics of InP/InGaAs heterojunction bipolar transistors. Two different methods for carrying out sulfur-based surface passivations are compared. These include exposure to gaseous hydrogen sulfide and immersion treatment in an ammonium sulfide solution. The temporal behaviour of effects resulting from such passivation treatments is reported. It is shown that liquid phase passivation has a larger beneficial effect on device performance than gas phase passivation. This is explained in terms of the polarity of passivating species and the exposed semiconductor surface. Finally, device encapsulation in a novel chalcogenide polymer is shown to be effective in preserving the benefits of surface passivation treatments. The relevant properties of this encapsulation material are also discussed

  16. Noise suppression in surface microseismic data by τ-p transform

    Science.gov (United States)

    Forghani-Arani, Farnoush; Batzle, Mike; Behura, Jyoti; Willis, Mark; Haines, Seth; Davidson, Michael

    2013-01-01

    Surface passive seismic methods are receiving increased attention for monitoring changes in reservoirs during the production of unconventional oil and gas. However, in passive seismic data the strong cultural and ambient noise (mainly surface-waves) decreases the effectiveness of these techniques. Hence, suppression of surface-waves is a critical step in surface microseismic monitoring. We apply a noise suppression technique, based on the τ — p transform, to a surface passive seismic dataset recorded over a Barnett Shale reservoir undergoing a hydraulic fracturing process. This technique not only improves the signal-to-noise ratios of added synthetic microseismic events, but it also preserves the event waveforms.

  17. Effective surface passivation of InP nanowires by atomic-layer-deposited Al2O3 with POx interlayer

    NARCIS (Netherlands)

    Black, L.E.; Cavalli, A.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.; Kessels, W.M.M.

    2017-01-01

    III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following

  18. Effect of ozone concentration on silicon surface passivation by atomic layer deposited Al2O3

    International Nuclear Information System (INIS)

    Gastrow, Guillaume von; Li, Shuo; Putkonen, Matti; Laitinen, Mikko; Sajavaara, Timo; Savin, Hele

    2015-01-01

    Highlights: • The ALD Al 2 O 3 passivation quality can be controlled by the ozone concentration. • Ozone concentration affects the Si/Al 2 O 3 interface charge and defect density. • A surface recombination velocity of 7 cm/s is reached combining ozone and water ALD. • Carbon and hydrogen concentrations correlate with the surface passivation quality. - Abstract: We study the impact of ozone-based Al 2 O 3 Atomic Layer Deposition (ALD) on the surface passivation quality of crystalline silicon. We show that the passivation quality strongly depends on the ozone concentration: the higher ozone concentration results in lower interface defect density and thereby improved passivation. In contrast to previous studies, our results reveal that too high interface hydrogen content can be detrimental to the passivation. The interface hydrogen concentration can be optimized by the ozone-based process; however, the use of pure ozone increases the harmful carbon concentration in the film. Here we demonstrate that low carbon and optimal hydrogen concentration can be achieved by a single process combining the water- and ozone-based reactions. This process results in an interface defect density of 2 × 10 11 eV −1 cm −2 , and maximum surface recombination velocities of 7.1 cm/s and 10 cm/s, after annealing and after an additional firing at 800 °C, respectively. In addition, our results suggest that the effective oxide charge density can be optimized in a simple way by varying the ozone concentration and by injecting water to the ozone process.

  19. Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

    Science.gov (United States)

    van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

    2017-06-01

    Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

  20. Electrochemical characterization of anode passivation mechanisms in copper electrorefining

    Science.gov (United States)

    Moats, Michael Scott

    Anode passivation can decrease productivity and quality while increasing costs in modern copper electrorefineries. This investigation utilized electrochemical techniques to characterize the passivation behavior of anode samples from ten different operating companies. It is believed that this collection of anodes is the most diverse set ever to be assembled to study the effect of anode composition on passivation. Chronopotentiometry was the main electrochemical technique, employing a current density of 3820 A m-2. From statistical analysis of the passivation characteristics, increasing selenium, tellurium, silver, lead and nickel were shown to accelerate passivation. Arsenic was the only anode impurity that inhibited passivation. Oxygen was shown to accelerate passivation when increased from 500 to 1500 ppm, but further increases did not adversely affect passivation. Nine electrolyte variables were also examined. Increasing the copper, sulfuric acid or sulfate concentration of the electrolyte accelerated passivation. Arsenic in the electrolyte had no effect on passivation. Chloride and optimal concentrations of thiourea and glue delayed passivation. Linear sweep voltammetry, cyclic voltammetry, and impedance spectroscopy provided complementary information. Analysis of the electrochemical results led to the development of a unified passivation mechanism. Anode passivation results from the formation of inhibiting films. Careful examination of the potential details, especially those found in the oscillations just prior to passivation, demonstrated the importance of slimes, copper sulfate and copper oxide. Slimes confine dissolution to their pores and inhibit diffusion. This can lead to copper sulfate precipitation, which blocks more of the surface area. Copper oxide forms because of the resulting increase in potential at the interface between the copper sulfate and anode. Ultimate passivation occurs when the anode potential is high enough to stabilize the oxide film in

  1. In-situ IR reflexion spectroscopy characterization of the passivation layer developed on the surface of lithium electrodes in organic medium; Passivation de surface: une nouvelle voie pour reduire l`autodecharge dans les batteries rechargeables a ions lithium LiMn{sub 2}O{sub 4}/Li

    Energy Technology Data Exchange (ETDEWEB)

    Barusseau, S. [Alcatel Alsthom Recherche, 91 - Marcoussis (France); Perton, F. [SAFT, Advanced and Industrial Battery Group, 86 - Poitiers (France); Rakotondrainibe, A.; Lamy, C. [Poitiers Univ., 86 (France). Laboratoire de Chimie 1, ``Electrochimie et Interactions``

    1996-12-31

    the development of lithium metal batteries is hindered by the bad reversibility of the Li{sup +}/Li pair, due to dendrites formation which limits the amount of active matter and can generate short-circuits. The chemical and electrochemical phenomena which take place at the electrode/organic electrolyte interface lead to the formation of a complex passivation film which is of prime importance for the functioning of this type of batteries. The in-situ infrared reflection spectroscopy is well adapted to the chemical study of the passivation layer. Two different techniques were used: the substraction normalized interfacial transform infrared spectroscopy (SNIFTIRS) and the electro-chemically modulated infrared reflectance spectroscopy. These methods have shown that the passivation layer that develops on the surface of the lithium electrode in contact with organic solutions (propylene carbonate, ethylene carbonate and dimethoxyethane) is mainly made of lithium alkyl carbonates (ROCO{sub 2}Li) and lithium carbonates (Li{sub 2}CO{sub 3}). (J.S.) 14 refs.

  2. In-situ IR reflexion spectroscopy characterization of the passivation layer developed on the surface of lithium electrodes in organic medium; Passivation de surface: une nouvelle voie pour reduire l`autodecharge dans les batteries rechargeables a ions lithium LiMn{sub 2}O{sub 4}/Li

    Energy Technology Data Exchange (ETDEWEB)

    Barusseau, S [Alcatel Alsthom Recherche, 91 - Marcoussis (France); Perton, F [SAFT, Advanced and Industrial Battery Group, 86 - Poitiers (France); Rakotondrainibe, A; Lamy, C [Poitiers Univ., 86 (France). Laboratoire de Chimie 1, ` ` Electrochimie et Interactions` `

    1997-12-31

    the development of lithium metal batteries is hindered by the bad reversibility of the Li{sup +}/Li pair, due to dendrites formation which limits the amount of active matter and can generate short-circuits. The chemical and electrochemical phenomena which take place at the electrode/organic electrolyte interface lead to the formation of a complex passivation film which is of prime importance for the functioning of this type of batteries. The in-situ infrared reflection spectroscopy is well adapted to the chemical study of the passivation layer. Two different techniques were used: the substraction normalized interfacial transform infrared spectroscopy (SNIFTIRS) and the electro-chemically modulated infrared reflectance spectroscopy. These methods have shown that the passivation layer that develops on the surface of the lithium electrode in contact with organic solutions (propylene carbonate, ethylene carbonate and dimethoxyethane) is mainly made of lithium alkyl carbonates (ROCO{sub 2}Li) and lithium carbonates (Li{sub 2}CO{sub 3}). (J.S.) 14 refs.

  3. Enhancing Efficiency of Perovskite Solar Cells via Surface Passivation with Graphene Oxide Interlayer.

    Science.gov (United States)

    Li, Hao; Tao, Leiming; Huang, Feihong; Sun, Qiang; Zhao, Xiaojuan; Han, Junbo; Shen, Yan; Wang, Mingkui

    2017-11-08

    Perovskite solar cells have been demonstrated as promising low-cost and highly efficient next-generation solar cells. Enhancing V OC by minimization the interfacial recombination kinetics can further improve device performance. In this work, we for the first time reported on surface passivation of perovskite layers with chemical modified graphene oxides, which act as efficient interlayer to reduce interfacial recombination and enhance hole extraction as well. Our modeling points out that the passivation effect mainly comes from the interaction between functional group (4-fluorophenyl) and under-coordinated Pb ions. The resulting perovskite solar cells achieved high efficient power conversion efficiency of 18.75% with enhanced high open circuit V OC of 1.11 V. Ultrafast spectroscopy, photovoltage/photocurrent transient decay, and electronic impedance spectroscopy characterizations reveal the effective passivation effect and the energy loss mechanism. This work sheds light on the importance of interfacial engineering on the surface of perovskite layers and provides possible ways to improve device efficiency.

  4. CVD-Based Valence-Mending Passivation for Crystalline-Si Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Meng [Arizona State Univ., Mesa, AZ (United States)

    2015-03-01

    The objective of this project is to investigate a new surface passivation technique, valence-mending passivation, for its applications in crystalline-Si solar cells to achieve significant efficiency improvement and cost reduction. As the enabling technique, the project includes the development of chemical vapor deposition recipes to passivate textured Si(100) and multicrystalline-Si surfaces by sulfur and the characterization of the passivated Si surfaces, including thermal stability, Schottky barrier height, contact resistance and surface recombination. One important application is to replace the Ag finger electrode in Si cells with Al to reduce cost, by ~$0.1/Wp, and allow terawatt-scale deployment of crystalline-Si solar cells. These all-Al Si cells require a low-temperature metallization process for the Al electrode, to be compatible with valence-mending passivation and to prevent Al diffusion into n-type Si. Another application is to explore valence-mending passivation of grain boundaries in multicrystalline Si by diffusing sulfur into grain boundaries, to reduce the efficiency gas between monocrystalline-Si solar cells and multicrystalline-Si cells. The major accomplishments of this project include: 1) Demonstration of chemical vapor deposition processes for valence-mending passivation of both monocrystalline Si(100) and multicrystalline Si surfaces. Record Schottky barriers have been demonstrated, with the new record-low barrier of less than 0.08 eV between Al and sulfur-passivated n-type Si(100) and the new record-high barrier of 1.14 eV between Al and sulfur-passivated p-type Si(100). On the textured p-type monocrystalline Si(100) surface, the highest barrier with Al is 0.85 eV by valence-mending passivation. 2) Demonstration of a low-temperature metallization process for Al in crystalline-Si solar cells. The new metallization process is based on electroplating of Al in a room-temperature ionic liquid. The resistivity of the electroplated Al is ~7×10–6

  5. False-positive result when a diphenylcarbazide spot test is used on trivalent chromium-passivated zinc surfaces

    DEFF Research Database (Denmark)

    Reveko, Valeriia; Lampert, Felix; Din, Rameez Ud

    2018-01-01

    chromium passivation on zinc; however, subsequent analysis by XPS could not confirm the presence of chromium in a hexavalent state. Conclusions Unintended oxidation of DPC induced by atmospheric corrosion is suggested as a possible reason for the false-positive reaction of the DPC test on a trivalent......A colorimetric 1,5-diphenylcarbazide (DPC)-based spot test can be used to identify hexavalent chromium on various metallic and leather surfaces. DPC testing on trivalent chromium-passivated zinc surfaces has unexpectedly given positive results in some cases, apparently indicating the presence...... of hexavalent chromium; however, the presence of hexavalent chromium has never been confirmed with more sensitive and accurate test methods. Objectives To examine the presence of hexavalent chromium on trivalent chromium-passivated zinc surfaces with a DPC-based spot test. Methods A colorimetric DPC spot test...

  6. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

    Science.gov (United States)

    Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

    2015-01-01

    In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

  7. Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation

    Directory of Open Access Journals (Sweden)

    Neha Batra

    2015-06-01

    Full Text Available The effect of deposition temperature (Tdep and subsequent annealing time (tanl of atomic layer deposited aluminum oxide (Al2O3 films on silicon surface passivation (in terms of surface recombination velocity, SRV is investigated. The pristine samples (as-deposited show presence of positive fixed charges, QF. The interface defect density (Dit decreases with increase in Tdep which further decreases with tanl up to 100s. An effective surface passivation (SRV<8 cm/s is realized for Tdep ≥ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (tanl between 10 to 30 min.

  8. Passivation of Si(111) surfaces with electrochemically grafted thin organic films

    Science.gov (United States)

    Roodenko, K.; Yang, F.; Hunger, R.; Esser, N.; Hinrichs, K.; Rappich, J.

    2010-09-01

    Ultra thin organic films (about 5 nm thick) of nitrobenzene and 4-methoxydiphenylamine were deposited electrochemically on p-Si(111) surfaces from benzene diazonium compounds. Studies based on atomic force microscopy, infrared spectroscopic ellipsometry and x-ray photoelectron spectroscopy showed that upon exposure to atmospheric conditions the oxidation of the silicon interface proceed slower on organically modified surfaces than on unmodified hydrogen passivated p-Si(111) surfaces. Effects of HF treatment on the oxidized organic/Si interface and on the organic layer itself are discussed.

  9. Using GNSS-R techniques to investigate the near sub-surface of Mars with the Deep Space Network

    Science.gov (United States)

    Elliott, H. M.; Bell, D. J.; Jin, C.; Decrossas, E.; Asmar, S.; Lazio, J.; Preston, R. A.; Ruf, C. S.; Renno, N. O.

    2017-12-01

    Global Navigation Satellite Systems Reflectometry (GNSS-R) has shown that passive measurements using separate active sources can infer the soil moisture, snow pack depth and other quantities of scientific interest. Here, we expand upon this method and propose that a passive measurement of the sub-surface dielectric profile of Mars can be made by using multipath interference between reflections off the surface and subsurface dielectric discontinuities. This measurement has the ability to reveal changes in the soil water content, the depth of a layer of sand, thickness of a layer of ice, and even identify centimeter-scale layering which may indicate the presence of a sedimentary bed. We have created a numerical ray tracing model to understand the potential of using multipath interference techniques to investigate the sub-surface dielectric properties and structure of Mars. We have further verified this model using layered beds of sand and concrete in laboratory experiments and then used the model to extrapolate how this technique may be applied to future Mars missions. We will present new results demonstrating how to characterize a multipath interference patterns as a function of frequency and/or incidence angle to measure the thickness of a dielectric layer of sand or ice. Our results demonstrate that dielectric discontinuities in the subsurface can be measured using this passive sensing technique and it could be used to effectively measure the thickness of a dielectric layer in the proximity of a landed spacecraft. In the case of an orbiter, we believe this technique would be effective at measuring the seasonal thickness of CO2 ice in the Polar Regions. This is exciting because our method can produce similar results to traditional ground penetrating radars without the need to have an active radar transmitter in-situ. Therefore, it is possible that future telecommunications systems can serve as both a radio and a scientific instrument when used in conjunction with

  10. Surface barrier analysis of semi-insulating and n{sup +}-type GaAs(0 0 1) following passivation with n-alkanethiol SAMs

    Energy Technology Data Exchange (ETDEWEB)

    Marshall, Gregory M. [Laboratory for Quantum Semiconductors and Photon-Based BioNanotechnology, Department of Electrical and Computer Engineering, Universite de Sherbrooke, Sherbrooke, Quebec, J1K 2R1 (Canada); Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, K1A 0R6 (Canada); Bensebaa, Farid [Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, K1A 0R6 (Canada); Dubowski, Jan J., E-mail: jan.j.dubowski@usherbrooke.ca [Laboratory for Quantum Semiconductors and Photon-Based BioNanotechnology, Department of Electrical and Computer Engineering, Universite de Sherbrooke, Sherbrooke, Quebec, J1K 2R1 (Canada)

    2011-02-15

    The surface Fermi level of semi-insulating and n{sup +}-type GaAs(0 0 1) was determined before and after passivation with n-alkanethiol self-assembled monolayers (SAMs) by X-ray photoelectron spectroscopy. Fermi level positioning was achieved using Au calibration pads integrated directly onto the GaAs surface, prior to SAM deposition, in order to provide a surface equipotential binding energy reference. Fermi level pinning within 50 meV and surface barrier characteristics according to the Advanced Unified Defect Model were observed. Our results demonstrate the effectiveness of the Au integration technique for the determination of band-edge referenced Fermi level positions and are relevant to an understanding of emerging technologies based on the molecular-semiconductor junction.

  11. Characterization of electrochemical and passive behaviour of Alloy 59 in acid solution

    International Nuclear Information System (INIS)

    Luo, Hong; Gao, Shujun; Dong, Chaofang; Li, Xiaogang

    2014-01-01

    Highlights: • A considerably thinner n-type passive film is observed on the Alloy-59. • The passive film formed in air was thicker than that formed in acid solution. • Primary constituents of passive film in air and acid solution are (Cr, Ni)-oxides and (Cr, Ni) hydroxides, respectively. - Abstract: The electrochemical behaviour and passive film properties of the Alloy 59 in sulfuric acid solution was evaluated by the potentiodynamic electrochemical measurements, electrochemical impedance spectroscopy, Mott-Schottky approach, and ex situ surface analytical technique as X-ray photoelectron spectroscopy (XPS) and Auger Electronic Spectrometer (AES). The results confirmed that the Alloy 59 exhibits well passive behaviour. A considerably thinner n-type passive film is observed on this type alloy. Based on the evaluations of surface composition analysis, the primary constituents of passive film formed in the air and acid solution are different, with the (Cr, Ni)-oxides and (Cr, Ni) hydroxides, respectively

  12. The Effects of Acid Passivation, Tricresyl Phosphate Pre-Soak, and UV/Ozone Treatment on the Tribology of Perfluoropolyether-Lubricated 440C Stainless Steel Couples

    Science.gov (United States)

    Shogrin, Bradley A.; Jones, William R., Jr.; Herrera-Fierro, Pilar

    1997-01-01

    The boundary-lubrication performance of perfluoropolyether (PFPE) thin films in the presence of passivated 440 C stainless steel is presented. The study utilized a standard ball-on-disc tribometer. Stainless steel surfaces were passivated with one of four techniques: 1) submersion in a chromic acid bath for 30 minutes at 46 C, 2) submersion in a chromic acid bath for 60 minutes at 56 C, 3) submersion in a tricresyl phosphate (TCP) bath for 2 days at 107 C, or 4) UV/Ozone treated for 15 minutes. After passivation, each disc had a 400 A film of PFPE (hexafluoropropene oxide) applied to it reproducibly (+/- 20%) and uniformly (+/- 15%) using a film deposition device. The lifetimes of these films were quantified by measuring the number of sliding wear cycles required to induce an increase in the friction coefficient from an initial value characteristic of the lubricated wear couple to a final, or failure value, characteristic of an unlubricated, unpassivated wear couple. The lubricated lifetime of the 440 C couple was not altered as a result of the various passivation techniques. The resulting surface chemistry of each passivation technique was examined using X-ray Photoelectron Spectroscopy (XPS). It was found that chromic acid passivation altered the Cr to Fe ratio of the surface. TCP passivation resulted in a FePO4 layer on the surface, while UV/Ozone passivation only removed the carbonaceous contamination layer. None of the passivation techniques were found to dramatically increase the oxide film thickness.

  13. Passive directional discrimination in laser-Doppler anemometry by the two-wavelength quadrature homodyne technique.

    Science.gov (United States)

    Büttner, Lars; Czarske, Jürgen

    2003-07-01

    We report a method for passive optical directional discrimination in laser-Doppler anemometers. For this purpose frequency-shift elements such as acousto-optic modulators, which are bulky and difficult to align during assembly, have traditionally been employed. We propose to use a quadrature homodyne technique to achieve directional discrimination of the fluid flow without any frequency-shift elements. It is based on the employment of two laser wavelengths, which generate two interference fringe systems with a phase shift of a quarter of the common fringe spacing. Measurement signal pairs with a direction-dependent phase shift of +/- pi/2 are generated. As a robust signal-processing technique, the cross-correlation technique is used. The principles of quadrature homodyne laser-Doppler anemometry are investigated. A setup that provides a constant phase shift of pi/2 throughout the entire measurement volume was achieved with both single-mode and multimode radiation. The directional discrimination was successfully verified with wind tunnel measurements. The complete passive technique offers the potential of building miniaturized measurement heads that can be integrated, e.g., into wind tunnel models.

  14. Surface protection during plasma hydrogenation for acceptor passivation in InP

    International Nuclear Information System (INIS)

    Lopata, J.; Dautremont-Smith, W.C.; Pearton, S.J.; Lee, J.W.; Ha, N.T.; Luftman, H.S.

    1990-01-01

    Various dielectric and metallic films were examined as H-permeable surface protection layers on InP during H 2 or D 2 plasma exposure for passivation of acceptors in the InP. Plasma deposited SiN x , SiO 2 , and a-Si(H) films ranging in thickness from 85 to 225 angstrom were used to protect p-InP during d 2 plasma exposure at 250 degrees C. Optimum protective layer thicknesses were determined by a trade-off between the effectiveness of the layer to prevent P loss from the wafer surface and the ability to diffuse atomic H or D at a rate greater than or equal to that in the underlying InP. SIMS and capacitance-voltage depth profiling were used to determine the extent of D in-diffusion and acceptor passivation respectively. Sputter deposited W and e-beam evaporated Ti films ∼100 Angstrom thick were also evaluated. The W coated sample yielded similar results to those with dielectric films in that acceptors in p-InP were passivated to a similar depth for the same plasma exposure. The 100 Angstrom Ti film, however, did not allow the D to diffuse into the InP substrate. It is surmised that the Ti film trapped the D, thus preventing diffusion into the substrate

  15. Thiol passivation of MWIR type II superlattice photodetectors

    Science.gov (United States)

    Salihoglu, O.; Muti, A.; Aydinli, A.

    2013-06-01

    Poor passivation on photodetectors can result in catastrophic failure of the device. Abrupt termination of mesa side walls during pixel definition generates dangling bonds that lead to inversion layers and surface traps leading to surface leakage currents that short circuit diode action. Good passivation, therefore, is critical in the fabrication of high performance devices. Silicondioxide has been the main stay of passivation for commercial photodetectors, deposited at high temperatures and high RF powers using plasma deposition techniques. In photodetectors based on III-V compounds, sulphur passivation has been shown to replace oxygen and saturate the dangling bonds. Despite its effectiveness, it degrades over time. More effort is required to create passivation layers which eliminate surface leakage current. In this work, we propose the use of sulphur based octadecanethiol (ODT), CH3(CH2)17SH, as a passivation layer for the InAs/GaSb superlattice photodetectors that acts as a self assembled monolayer (SAM). ODT SAMs consist of a chain of 18 carbon atoms with a sulphur atom at its head. ODT Thiol coating is a simple process that consist of dipping the sample into the solution for a prescribed time. Excellent electrical performance of diodes tested confirm the effectiveness of the sulphur head stabilized by the intermolecular interaction due to van der Walls forces between the long chains of ODT SAM which results in highly stable ultrathin hydrocarbon layers without long term degradation.

  16. Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer.

    Science.gov (United States)

    Black, L E; Cavalli, A; Verheijen, M A; Haverkort, J E M; Bakkers, E P A M; Kessels, W M M

    2017-10-11

    III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a PO x layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since PO x is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al 2 O 3 capping layer to form a PO x /Al 2 O 3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm -2 ), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as

  17. Delayed charge recovery discrimination of passivated surface alpha events in P-type point-contact detectors

    Science.gov (United States)

    Gruszko, J.; Majorana Collaboration

    2017-09-01

    The Majorana Demonstrator searches for neutrinoless double-beta decay of 76Ge using arrays of high-purity germanium detectors. If observed, this process would demonstrate that lepton number is not a conserved quantity in nature, with implications for grand-unification and for explaining the predominance of matter over antimatter in the universe. A problematic background in such large granular detector arrays is posed by alpha particles. In the Majorana Demonstrator, events have been observed that are consistent with energy-degraded alphas originating on the passivated surface, leading to a potential background contribution in the region-of-interest for neutrinoless double-beta decay. However, it is also observed that when energy deposition occurs very close to the passivated surface, charges drift through the bulk onto that surface, and then drift along it with greatly reduced mobility. This leads to both a reduced prompt signal and a measurable change in slope of the tail of a recorded pulse. In this contribution we discuss the characteristics of these events and the development of a filter that can identify the occurrence of this delayed charge recovery, allowing for the efficient rejection of passivated surface alpha events in analysis.

  18. Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films.

    Science.gov (United States)

    Vandana; Batra, Neha; Gope, Jhuma; Singh, Rajbir; Panigrahi, Jagannath; Tyagi, Sanjay; Pathi, P; Srivastava, S K; Rauthan, C M S; Singh, P K

    2014-10-21

    Thermal ALD deposited Al2O3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (∼100 s) in nitrogen ambient which is reflected in the low surface recombination velocity (SRV passivation. Both as-deposited and low thermal budget annealed films show the presence of positive fixed charges and this is never been reported in the literature before. The role of field and chemical passivation is investigated in terms of fixed charge and interface defect densities. Further, the importance of the annealing step sequence in the MIS structure fabrication protocol is also investigated from the view point of its effect on the nature of fixed charges.

  19. Fundamental studies of passivity and passivity breakdown

    International Nuclear Information System (INIS)

    Macdonald, D.D.; Urquidi-Macdonald, M.; Song, H.; Biaggio-Rocha, S.; Searson, P.

    1991-11-01

    This report summarizes the findings of our fundamental research program on passivity and passivity breakdown. During the past three and one half years in this program (including the three year incrementally-funded grant prior to the present grant), we developed and experimentally tested various physical models for the growth and breakdown of passive films on metal surfaces. These models belong to a general class termed ''point defects models'' (PDMs), in which the growth and breakdown of passive films are described in terms of the movement of anion and cation vacancies

  20. Surface science techniques

    CERN Document Server

    Walls, JM

    2013-01-01

    This volume provides a comprehensive and up to the minute review of the techniques used to determine the nature and composition of surfaces. Originally published as a special issue of the Pergamon journal Vacuum, it comprises a carefully edited collection of chapters written by specialists in each of the techniques and includes coverage of the electron and ion spectroscopies, as well as the atom-imaging methods such as the atom probe field ion microscope and the scanning tunnelling microscope. Surface science is an important area of study since the outermost surface layers play a crucial role

  1. Highly sensitive radioimmunoassay technique for subtyping the antibody to hepatitis B surface antigen

    Energy Technology Data Exchange (ETDEWEB)

    Fang, C T; Nath, N; Berberian, H; Dodd, R Y [American Red Cross, Blood Research Laboratory, Bethesda, MD, USA

    1978-12-01

    A highly sensitive technique for determining the subtype specificity of antibody to hepatitis B surface antigen (anti-HBs) is described. Immunoadsorbent consisting of controlled pore glass coated with subtype specific HBsAg was used to remove homologous antibody from the test samples before testing them for residual antibody by a commercially available radioimmunoassay (RIA). A total of 73 anti-HBs-positive samples from asymptomatic blood donors were tested. In nearly 80% of these samples the subtype reactivity could be determined by this technique. Only 67% could be typed by conventional liquid phase absorption RIA and 22% by passive hemagglutination inhibition techniques. Among the samples with low anti-HBs titer, ad and ay subtypes were found with equal frequency; however, with the increase in anti-HBs titer, considerably higher proportion of ad specificity was detected.

  2. Calibrating passive sampling and passive dosing techniques to lipid based concentrations

    DEFF Research Database (Denmark)

    Mayer, Philipp; Schmidt, Stine Nørgaard; Annika, A.

    2011-01-01

    Equilibrium sampling into various formats of the silicone polydimethylsiloxane (PDMS) is increasingly used to measure the exposure of hydrophobic organic chemicals in environmental matrices, and passive dosing from silicone is increasingly used to control and maintain their exposure in laboratory...... coated vials and with Head Space Solid Phase Microextraction (HS-SPME) yielded lipid based concentrations that were in good agreement with each other, but about a factor of two higher than measured lipid-normalized concentrations in the organisms. Passive dosing was applied to bioconcentration...

  3. Optimization of the Surface Structure on Black Silicon for Surface Passivation.

    Science.gov (United States)

    Jia, Xiaojie; Zhou, Chunlan; Wang, Wenjing

    2017-12-01

    Black silicon shows excellent anti-reflection and thus is extremely useful for photovoltaic applications. However, its high surface recombination velocity limits the efficiency of solar cells. In this paper, the effective minority carrier lifetime of black silicon is improved by optimizing metal-catalyzed chemical etching (MCCE) method, using an Al 2 O 3 thin film deposited by atomic layer deposition (ALD) as a passivation layer. Using the spray method to eliminate the impact on the rear side, single-side black silicon was obtained on n-type solar grade silicon wafers. Post-etch treatment with NH 4 OH/H 2 O 2 /H 2 O mixed solution not only smoothes the surface but also increases the effective minority lifetime from 161 μs of as-prepared wafer to 333 μs after cleaning. Moreover, adding illumination during the etching process results in an improvement in both the numerical value and the uniformity of the effective minority carrier lifetime.

  4. Chemical and electrical passivation of Si(1 1 1) surfaces

    International Nuclear Information System (INIS)

    Tian Fangyuan; Yang Dan; Opila, Robert L.; Teplyakov, Andrew V.

    2012-01-01

    This paper compares the physical and chemical properties of hydrogen-passivated Si(1 1 1) single crystalline surfaces prepared by two main chemical preparation procedures. The modified RCA cleaning is commonly used to prepare atomically flat stable surfaces that are easily identifiable spectroscopically and are the standard for chemical functionalization of silicon. On the other hand electronic properties of these surfaces are sometimes difficult to control. A much simpler silicon surface preparation procedure includes HF dipping for a short period of time. This procedure yields an atomically rough surface, whose chemical identity is not well-defined. However, the surfaces prepared by this approach often exhibit exceptionally attractive electronic properties as determined by long charge carrier lifetimes. This work utilizes infrared spectroscopy and X-ray photoelectron spectroscopy to investigate chemical modification of the surfaces prepared by these two different procedures with PCl 5 (leading to surface chlorination) and with short- and long-alkyl-chain alkenes (1-decene and 1-octodecene, respectively) and follows the electronic properties of the starting surfaces produced by measuring charge-carrier lifetimes.

  5. Chemical and electrical passivation of Si(1 1 1) surfaces

    Science.gov (United States)

    Tian, Fangyuan; Yang, Dan; Opila, Robert L.; Teplyakov, Andrew V.

    2012-01-01

    This paper compares the physical and chemical properties of hydrogen-passivated Si(1 1 1) single crystalline surfaces prepared by two main chemical preparation procedures. The modified RCA cleaning is commonly used to prepare atomically flat stable surfaces that are easily identifiable spectroscopically and are the standard for chemical functionalization of silicon. On the other hand electronic properties of these surfaces are sometimes difficult to control. A much simpler silicon surface preparation procedure includes HF dipping for a short period of time. This procedure yields an atomically rough surface, whose chemical identity is not well-defined. However, the surfaces prepared by this approach often exhibit exceptionally attractive electronic properties as determined by long charge carrier lifetimes. This work utilizes infrared spectroscopy and X-ray photoelectron spectroscopy to investigate chemical modification of the surfaces prepared by these two different procedures with PCl5 (leading to surface chlorination) and with short- and long-alkyl-chain alkenes (1-decene and 1-octodecene, respectively) and follows the electronic properties of the starting surfaces produced by measuring charge-carrier lifetimes.

  6. Passive solar technology

    Energy Technology Data Exchange (ETDEWEB)

    Watson, D

    1981-04-01

    The present status of passive solar technology is summarized, including passive solar heating, cooling and daylighting. The key roles of the passive solar system designer and of innovation in the building industry are described. After definitions of passive design and a summary of passive design principles are given, performance and costs of passive solar technology are discussed. Passive energy design concepts or methods are then considered in the context of the overall process by which building decisions are made to achieve the integration of new techniques into conventional design. (LEW).

  7. Passivation of surface states of α-Fe2O3(0001) surface by deposition of Ga2O3 overlayers: A density functional theory study.

    Science.gov (United States)

    Ulman, Kanchan; Nguyen, Manh-Thuong; Seriani, Nicola; Gebauer, Ralph

    2016-03-07

    There is a big debate in the community regarding the role of surface states of hematite in the photoelectrochemical water splitting. Experimental studies on non-catalytic overlayers passivating the hematite surface states claim a favorable reduction in the overpotential for the water splitting reaction. As a first step towards understanding the effect of these overlayers, we have studied the system Ga2O3 overlayers on hematite (0001) surfaces using first principles computations in the PBE+U framework. Our computations suggest that stoichiometric terminations of Ga2O3 overlayers are energetically more favored than the bare surface, at ambient oxygen chemical potentials. Energetics suggest that the overlayers prefer to grow via a layer-plus-island (Stranski-Krastanov) growth mode with a critical layer thickness of 1-2 layers. Thus, a complete wetting of the hematite surface by an overlayer of gallium oxide is thermodynamically favored. We establish that the effect of deposition of the Ga2O3 overlayers on the bare hematite surface is to passivate the surface states for the stoichiometric termination. For the oxygen terminated surface which is the most stable termination under photoelectrochemical conditions, the effect of deposition of the Ga2O3 overlayer is to passivate the hole-trapping surface state.

  8. Laser ablation and photostimulated passivation of the surface of Cd1–хZnхTe crystals

    Directory of Open Access Journals (Sweden)

    Zagoruiko Yu. A.

    2011-06-01

    Full Text Available A new physical method of Cd1–хZnхTe-detectors passivation is proposed — the treatment of crystal surface by a laser ablation (LA with subsequent photostimulated passivation (PhSP, during wich a high-resistance oxide layer is formed on it’s surface after the surface cleaning under intensive light irradiation effect. It is shown that the method of LA+PhSP is manufacturable and in comparison with PhSP and PhESP methods developed earlier provides a thick, homogeneous and high-oxide films, which significantly increases the surface resistivity of Cd1–хZnхTe samples and reduces leakage currents in them.

  9. Silicon passivation study under low energy electron irradiation conditions

    International Nuclear Information System (INIS)

    Cluzel, R.

    2010-01-01

    Backside illuminated thinned CMOS (Complementary Metal Oxide Semiconductor) imaging system is a technology developed to increase the signal to noise ratio and the sensibility of such sensors. This configuration is adapted to the electrons detection from the energy range of [1 - 12 keV]. The impinging electron creates by multiplication several hundreds of secondary electrons close to the surface. A P ++ highly-doped passivation layer of the rear face is required to reduce the secondary electron surface recombination rate. Thanks to the potential barrier induced by the P ++ layer, the passivation layer increases the collected charges number and so the sensor collection gain. The goal of this study is to develop some experimental methods in order to determine the effect of six different passivation processes on the collection gain. Beforehand, the energy profile deposited by an incident electron is studied with the combination of Monte-Carlo simulations and some analytical calculations. The final collection gain model shows that the mirror effect from the passivation layer is a key factor at high energies whereas the passivation layer has to be as thin as possible at low energies. A first experimental setup which consists in irradiating P ++ /N large diodes allows to study the passivation process impacts on the surface recombinations. Thanks to a second setup based on a single event upset directly on thinned CMOS sensor, passivation techniques are discriminated in term of mirror effect and the implied spreading charges. The doping atoms activation laser annealing is turn out to be a multiplication gain inhomogeneity source impacting directly the matrix uniformity. (author)

  10. Pesticide monitoring in surface water and groundwater using passive samplers

    Science.gov (United States)

    Kodes, V.; Grabic, R.

    2009-04-01

    Passive samplers as screening devices have been used within a czech national water quality monitoring network since 2002 (SPMD and DGT samplers for non polar substances and metals). The passive sampler monitoring of surface water was extended to polar substances, in 2005. Pesticide and pharmaceutical POCIS samplers have been exposed in surface water at 21 locations and analysed for polar pesticides, perfluorinated compounds, personal care products and pharmaceuticals. Pesticide POCIS samplers in groundwater were exposed at 5 locations and analysed for polar pesticides. The following active substances of plant protection products were analyzed in surface water and groundwater using LC/MS/MS: 2,4,5-T, 2,4-D, Acetochlor, Alachlor, Atrazine, Atrazine_desethyl, Azoxystrobin, Bentazone, Bromacil, Bromoxynil, Carbofuran, Clopyralid, Cyanazin, Desmetryn, Diazinon, Dicamba, Dichlobenil, Dichlorprop, Dimethoat, Diuron, Ethofumesate, Fenarimol, Fenhexamid, Fipronil, Fluazifop-p-butyl, Hexazinone, Chlorbromuron, Chlorotoluron, Imazethapyr, Isoproturon, Kresoxim-methyl, Linuron, MCPA, MCPP, Metalaxyl, Metamitron, Methabenzthiazuron, Methamidophos, Methidathion, Metobromuron, Metolachlor, Metoxuron, Metribuzin, Monolinuron, Nicosulfuron, Phorate, Phosalone, Phosphamidon, Prometryn, Propiconazole, Propyzamide, Pyridate, Rimsulfuron, Simazine, Tebuconazole, Terbuthylazine, Terbutryn, Thifensulfuron-methyl, Thiophanate-methyl and Tri-allate. The POCIS samplers performed very well being able to provide better picture than grab samples. The results show that polar pesticides and also perfluorinated compounds, personal care products and pharmaceuticals as well occur in hydrosphere of the Czech republic. Acknowledgment: Authors acknowledge the financial support of grant No. 2B06095 by the Ministry of Education, Youth and Sports.

  11. Defect generation/passivation by low energy hydrogen implant for silicon solar cells

    International Nuclear Information System (INIS)

    Sopori, B.L.; Zhou, T.Q.; Rozgonyi, G.A.

    1990-01-01

    Low energy ion implant is shown to produce defects in silicon. These defects include surface damage, hydrogen agglomeration, formation of platelets with (111) habit plane and decoration of dislocations. Hydrogen also produces an inversion type of surface on boron doped silicon. These effects indicate that a preferred approach for passivation is to incorporate hydrogen from the back side of the cell. A backside H + implant technique is described. The results show that degree of passivation differs for various devices. A comparison of the defect structures of hydrogenated devices indicates that the structure and the distribution of defects in the bulk of the material plays a significant role in determining the degree of passivation

  12. Radicals and ions controlling by adjusting the antenna-substrate distance in a-Si:H deposition using a planar ICP for c-Si surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, H.P., E-mail: haipzhou@uestc.edu.cn [School of Energy Science and Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Ave., West High-Tech Zone, Chengdu, Sichuan, 611731 (China); Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xu, S., E-mail: shuyan.xu@nie.edu.sg [Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xu, M. [Key Laboratory of Information Materials of Sichuan Province & School of Electrical and Information Engineering, Southwest University for Nationalities, Chengdu, 610041 (China); Xu, L.X.; Wei, D.Y. [Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xiang, Y. [School of Energy Science and Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Ave., West High-Tech Zone, Chengdu, Sichuan, 611731 (China); Xiao, S.Q. [Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122 (China)

    2017-02-28

    Highlights: • A planar ICP was used to grow a-Si:H films for c-Si surface passivation. • The direct- and remote-plasma was compared for high-quality c-Si surface passivation. • The remote ICP with controlled plasma species and ion bombardments is preferable for the surface passivation of c-Si. - Abstract: Being a key issue in the research and fabrication of silicon heterojunction (SHJ) solar cells, crystalline silicon (c-Si) surface passivation is theoretically and technologically intricate due to its complicate dependence on plasma characteristics, material properties, and plasma-material interactions. Here amorphous silicon (a-Si:H) grown by a planar inductively coupled plasma (ICP) reactor working under different antenna-substrate distances of d was used for the surface passivation of low-resistivity p-type c-Si. It is found that the microstructures (i.e., the crystallinity, Si-H bonding configuration etc.) and passivation function on c-Si of the deposited a-Si:H were profoundly influenced by the parameter of d, which primarily determines the types of growing precursors of SiH{sub n}/H contributing to the film growth and the interaction between the plasma and growing surface. c-Si surface passivation is analyzed in terms of the d-dependent a-Si:H properties and plasma characteristics. The controlling of radical types and ion bombardment on the growing surface through adjusting parameter d is emphasized.

  13. Passive Polarimetric Information Processing for Target Classification

    Science.gov (United States)

    Sadjadi, Firooz; Sadjadi, Farzad

    Polarimetric sensing is an area of active research in a variety of applications. In particular, the use of polarization diversity has been shown to improve performance in automatic target detection and recognition. Within the diverse scope of polarimetric sensing, the field of passive polarimetric sensing is of particular interest. This chapter presents several new methods for gathering in formation using such passive techniques. One method extracts three-dimensional (3D) information and surface properties using one or more sensors. Another method extracts scene-specific algebraic expressions that remain unchanged under polariza tion transformations (such as along the transmission path to the sensor).

  14. Effects of Active and Passive Control Techniques on Mach 1.5 Cavity Flow Dynamics

    Directory of Open Access Journals (Sweden)

    Selin Aradag

    2017-01-01

    Full Text Available Supersonic flow over cavities has been of interest since 1960s because cavities represent the bomb bays of aircraft. The flow is transient, turbulent, and complicated. Pressure fluctuations inside the cavity can impede successful weapon release. The objective of this study is to use active and passive control methods on supersonic cavity flow numerically to decrease or eliminate pressure oscillations. Jet blowing at several locations on the front and aft walls of the cavity configuration is used as an active control method. Several techniques are used for passive control including using a cover plate to separate the flow dynamics inside and outside of the cavity, trailing edge wall modifications, such as inclination of the trailing edge, and providing curvature to the trailing edge wall. The results of active and passive control techniques are compared with the baseline case in terms of pressure fluctuations, sound pressure levels at the leading edge, trailing edge walls, and cavity floor and in terms of formation of the flow structures and the results are presented. It is observed from the results that modification of the trailing edge wall is the most effective of the control methods tested leading to up to 40 dB reductions in cavity tones.

  15. A highly sensitive radioimmunoassay technique for subtyping the antibody to hepatitis B surface antigen

    International Nuclear Information System (INIS)

    Fang, C.T.; Nath, N.; Berberian, H.; Dodd, R.Y.

    1978-01-01

    A highly sensitive technique for determining the subtype specificity of antibody to hepatitis B surface antigen (anti-HBs) is described. Immunoadsorbent consisting of controlled pore glass coated with subtype specific HBsAg was used to remove homologous antibody from the test samples before testing them for residual antibody by a commercially available radioimmunoassay (RIA). A total of 73 anti-HBs-positive samples from asymptomatic blood donors were tested. In nearly 80% of these samples the subtype reactivity could be determined by this technique. Only 67% could be typed by conventional liquid phase absorption RIA and 22% by passive hemagglutination inhibition techniques. Among the samples with low anti-HBs titer, ad and ay subtypes were found with equal frequency; however, with the increase in anti-HBs titer, considerably higher proportion of ad specificity was detected. (Auth.)

  16. Effect of ozone concentration on silicon surface passivation by atomic layer deposited Al{sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Gastrow, Guillaume von, E-mail: guillaume.von.gastrow@aalto.fi [Aalto University, Department of Micro- and Nanosciences, Tietotie 3, 02150 Espoo (Finland); Li, Shuo [Aalto University, Department of Micro- and Nanosciences, Tietotie 3, 02150 Espoo (Finland); Putkonen, Matti [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044 VTT, Espoo (Finland); Aalto University School of Chemical Technology, Laboratory of Inorganic Chemistry, FI-00076 Aalto, Espoo (Finland); Laitinen, Mikko; Sajavaara, Timo [University of Jyvaskyla, Department of Physics, FIN-40014 University of Jyvaskyla (Finland); Savin, Hele [Aalto University, Department of Micro- and Nanosciences, Tietotie 3, 02150 Espoo (Finland)

    2015-12-01

    Highlights: • The ALD Al{sub 2}O{sub 3} passivation quality can be controlled by the ozone concentration. • Ozone concentration affects the Si/Al{sub 2}O{sub 3} interface charge and defect density. • A surface recombination velocity of 7 cm/s is reached combining ozone and water ALD. • Carbon and hydrogen concentrations correlate with the surface passivation quality. - Abstract: We study the impact of ozone-based Al{sub 2}O{sub 3} Atomic Layer Deposition (ALD) on the surface passivation quality of crystalline silicon. We show that the passivation quality strongly depends on the ozone concentration: the higher ozone concentration results in lower interface defect density and thereby improved passivation. In contrast to previous studies, our results reveal that too high interface hydrogen content can be detrimental to the passivation. The interface hydrogen concentration can be optimized by the ozone-based process; however, the use of pure ozone increases the harmful carbon concentration in the film. Here we demonstrate that low carbon and optimal hydrogen concentration can be achieved by a single process combining the water- and ozone-based reactions. This process results in an interface defect density of 2 × 10{sup 11} eV{sup −1} cm{sup −2}, and maximum surface recombination velocities of 7.1 cm/s and 10 cm/s, after annealing and after an additional firing at 800 °C, respectively. In addition, our results suggest that the effective oxide charge density can be optimized in a simple way by varying the ozone concentration and by injecting water to the ozone process.

  17. Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

    Directory of Open Access Journals (Sweden)

    Jia Ge

    2014-01-01

    Full Text Available We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper. The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen, silane, and carbon dioxide in an industrial remote inductively coupled plasma platform. Through the investigation on CO2 partial pressure and process temperature, excellent surface passivation quality and optical properties are achieved. It is found that the hydrogen content in the film is much higher than what is commonly reported in intrinsic amorphous silicon due to oxygen incorporation. The observed slow depletion of hydrogen with increasing temperature greatly enhances its process window as well. The effective lifetime of symmetrically passivated samples under the optimal condition exceeds 4.7 ms on planar n-type Czochralski silicon wafers with a resistivity of 1 Ωcm, which is equivalent to an effective surface recombination velocity of less than 1.7 cms−1 and an implied open-circuit voltage (Voc of 741 mV. A comparison with several high quality passivation schemes for solar cells reveals that the developed inductively coupled plasma deposited films show excellent passivation quality. The excellent optical property and resistance to degradation make it an excellent substitute for industrial heterojunction silicon solar cell production.

  18. High reduction of interfacial charge recombination in colloidal quantum dot solar cells by metal oxide surface passivation.

    Science.gov (United States)

    Chang, Jin; Kuga, Yuki; Mora-Seró, Iván; Toyoda, Taro; Ogomi, Yuhei; Hayase, Shuzi; Bisquert, Juan; Shen, Qing

    2015-03-12

    Bulk heterojunction (BHJ) solar cells based on colloidal QDs and metal oxide nanowires (NWs) possess unique and outstanding advantages in enhancing light harvesting and charge collection in comparison to planar architectures. However, the high surface area of the NW structure often brings about a large amount of recombination (especially interfacial recombination) and limits the open-circuit voltage in BHJ solar cells. This problem is solved here by passivating the surface of the metal oxide component in PbS colloidal quantum dot solar cells (CQDSCs). By coating thin TiO2 layers onto ZnO-NW surfaces, the open-circuit voltage and power conversion efficiency have been improved by over 40% in PbS CQDSCs. Characterization by transient photovoltage decay and impedance spectroscopy indicated that the interfacial recombination was significantly reduced by the surface passivation strategy. An efficiency as high as 6.13% was achieved through the passivation approach and optimization for the length of the ZnO-NW arrays (device active area: 16 mm2). All solar cells were tested in air, and exhibited excellent air storage stability (without any performance decline over more than 130 days). This work highlights the significance of metal oxide passivation in achieving high performance BHJ solar cells. The charge recombination mechanism uncovered in this work could shed light on the further improvement of PbS CQDSCs and/or other types of solar cells.

  19. Comparison of two solid-phase radioimmunoassay systems and a reverse passive haemagglutination test for the detection of hepatitis B surface antigen

    International Nuclear Information System (INIS)

    Hui, Z.; Coulepis, A.G.; Gust, I.D.

    1982-01-01

    The sensitivity and specificity of two commercially available radioimmunosay tests (Austria II-125, Abbott Laboratories; and International CIS, Commissariat Alenergie Atomique-Oris Laboratoire des Produits Biomedicaux) and a reverse passive haemagglutination test (Hepatest, Wellcome) for detection of hepatitis B surface antigen were evaluated using the Australian hepatitis B reference panel of 25 sera, and a panel of 257 sera collected from patients with acute hepatitis B, chronic carriers of hepatitis B surface antigen and two populations in which hepatitis B virus infection is known to be endemic. The three techniques were found to be generally comparable in sensitivity and specificity. The advantages and disadvantages of each method are discussed

  20. Modern techniques of surface science

    CERN Document Server

    Woodruff, D Phil

    2016-01-01

    This fully revised, updated and reorganised third edition provides a thorough introduction to the characterisation techniques used in surface science and nanoscience today. Each chapter brings together and compares the different techniques used to address a particular research question, including how to determine the surface composition, surface structure, surface electronic structure, surface microstructure at different length scales (down to sub-molecular), and the molecular character of adsorbates and their adsorption or reaction properties. Readers will easily understand the relative strengths and limitations of the techniques available to them and, ultimately, will be able to select the most suitable techniques for their own particular research purposes. This is an essential resource for researchers and practitioners performing materials analysis, and for senior undergraduate students looking to gain a clear understanding of the underlying principles and applications of the different characterisation tec...

  1. Strategies for Reduced Acid and Metalliferous Drainage by Pyrite Surface Passivation

    Directory of Open Access Journals (Sweden)

    Gujie Qian

    2017-03-01

    Full Text Available Acid and metalliferous drainage (AMD is broadly accepted to be a major global environmental problem facing the mining industry, requiring expensive management and mitigation. A series of laboratory-scale kinetic leach column (KLC experiments, using both synthetic and natural mine wastes, were carried out to test the efficacy of our pyrite passivation strategy (developed from previous research for robust and sustainable AMD management. For the synthetic waste KLC tests, initial treatment with lime-saturated water was found to be of paramount importance for maintaining long-term circum-neutral pH, favourable for the formation and preservation of the pyrite surface passivating layer and reduced acid generation rate. Following the initial lime-saturated water treatment, minimal additional alkalinity (calcite-saturated water was required to maintain circum-neutral pH for the maintenance of pyrite surface passivation. KLC tests examining natural potentially acid forming (PAF waste, with much greater peak acidity than that of the synthetic waste, blended with lime (≈2 wt % with and without natural non-acid-forming (NAF waste covers, were carried out. The addition of lime and use of NAF covers maintained circum-neutral leachate pH up to 24 weeks. During this time, the net acidity generated was found to be significantly reduced by the overlying NAF cover. If the reduced rate of acidity production from the natural PAF waste is sustained, the addition of smaller (more economically-feasible amounts of lime, together with application of NAF wastes as covers, could be trialled as a potential cost-effective AMD mitigation strategy.

  2. Microwave Remote Sensing Modeling of Ocean Surface Salinity and Winds Using an Empirical Sea Surface Spectrum

    Science.gov (United States)

    Yueh, Simon H.

    2004-01-01

    Active and passive microwave remote sensing techniques have been investigated for the remote sensing of ocean surface wind and salinity. We revised an ocean surface spectrum using the CMOD-5 geophysical model function (GMF) for the European Remote Sensing (ERS) C-band scatterometer and the Ku-band GMF for the NASA SeaWinds scatterometer. The predictions of microwave brightness temperatures from this model agree well with satellite, aircraft and tower-based microwave radiometer data. This suggests that the impact of surface roughness on microwave brightness temperatures and radar scattering coefficients of sea surfaces can be consistently characterized by a roughness spectrum, providing physical basis for using combined active and passive remote sensing techniques for ocean surface wind and salinity remote sensing.

  3. Impact of microcrystalline silicon carbide growth using hot-wire chemical vapor deposition on crystalline silicon surface passivation

    International Nuclear Information System (INIS)

    Pomaska, M.; Beyer, W.; Neumann, E.; Finger, F.; Ding, K.

    2015-01-01

    Highly crystalline microcrystalline silicon carbide (μc-SiC:H) with excellent optoelectronic material properties is a promising candidate as highly transparent doped layer in silicon heterojunction (SHJ) solar cells. These high quality materials are usually produced using hot wire chemical vapor deposition under aggressive growth conditions giving rise to the removal of the underlying passivation layer and thus the deterioration of the crystalline silicon (c-Si) surface passivation. In this work, we introduced the n-type μc-SiC:H/n-type μc-SiO x :H/intrinsic a-SiO x :H stack as a front layer configuration for p-type SHJ solar cells with the μc-SiO x :H layer acting as an etch-resistant layer against the reactive deposition conditions during the μc-SiC:H growth. We observed that the unfavorable expansion of micro-voids at the c-Si interface due to the in-diffusion of hydrogen atoms through the layer stack might be responsible for the deterioration of surface passivation. Excellent lifetime values were achieved under deposition conditions which are needed to grow high quality μc-SiC:H layers for SHJ solar cells. - Highlights: • High surface passivation quality was preserved after μc-SiC:H deposition. • μc-SiC:H/μc-SiO x :H/a-SiO x :H stack a promising front layer configuration • Void expansion at a-SiO x :H/c-Si interface for deteriorated surface passivation • μc-SiC:H provides a high transparency and electrical conductivity.

  4. Comparison of positive-pressure, passive ultrasonic, and laser-activated irrigations on smear-layer removal from the root canal surface.

    Science.gov (United States)

    Sahar-Helft, Sharonit; Sarp, Ayşe Sena Kabaş; Stabholtz, Adam; Gutkin, Vitaly; Redenski, Idan; Steinberg, Doron

    2015-03-01

    The purpose of this study was to compare the efficacy of three irrigation techniques for smear-layer removal with 17% EDTA. Cleaning and shaping the root canal system during endodontic treatment produces a smear layer and hard tissue debris. Three irrigation techniques were tested for solution infiltration of this layer: positive-pressure irrigation, passive ultrasonic irrigation, and laser-activated irrigation. Sixty extracted teeth were divided into six equal groups; 17% EDTA was used for 60 sec irrigation of five of the groups. The groups were as follows: Group 1, treated only with ProTaper™ F3 Ni-Ti files; Group 2, positive-pressure irrigation, with a syringe; Group 3, passive ultrasonic irrigation, inserted 1 mm short of the working length; Group 4, passive ultrasonic irrigation, inserted in the upper coronal third of the root; Group 5, Er:YAG laser-activated irrigation, inserted 1 mm short of the working length; and Group 6, Er:YAG laser-activated irrigation, inserted in the upper coronal third of the root. Scanning electron microscopy showed that the smear layer is removed most efficiently using laser-activated irrigation at low energy with 17% EDTA, inserted either at the working length or only in the coronal upper third of the root. Amounts of Ca, P, and O were not significantly different on all treated dentin surfaces. Smear-layer removal was most effective when the root canals were irrigated using Er:YAG laser at low energy with 17% EDTA solution. Interestingly, removal of the smear layer along the entire canal was similar when the laser was inserted in the upper coronal third and at 1 mm short of the working length of the root canal. This effect was not observed with the ultrasonic and positive-pressure techniques.

  5. Effect of Ultrasonic Nano-Crystal Surface Modification (UNSM) on the Passivation Behavior of Aged 316L Stainless Steel.

    Science.gov (United States)

    Kim, Ki-Tae; Lee, Jung-Hee; Kim, Young-Sik

    2017-06-27

    Stainless steels have good corrosion resistance in many environments but welding or aging can decrease their resistance. This work focused on the effect of aging time and ultrasonic nano-crystal surface modification on the passivation behavior of 316L stainless steel. In the case of slightly sensitized 316L stainless steel, increasing the aging time drastically decreased the pitting potential, increased the passive current density, and decreased the resistance of the passive film, even though aging did not form chromium carbide and a chromium depletion zone. This behavior is due to the micro-galvanic corrosion between the matrix and carbon segregated area, and this shows the importance of carbon segregation in grain boundaries to the pitting corrosion resistance of stainless steel, in addition to the formation of the chromium depletion zone. UNSM (Ultrasonic Nano Crystal Surface Modification)-treatment to the slightly sensitized 316L stainless steel increased the pitting potential, decreased the passive current density, and increased the resistance of the passive film. However, in the case of heavily sensitized 316L stainless steel, UNSM-treatment decreased the pitting potential, increased the passive current density, and decreased the resistance of the passive film. This behavior is due to the dual effects of the UNSM-treatment. That is, the UNSM-treatment reduced the carbon segregation, regardless of whether the stainless steel 316L was slightly or heavily sensitized. However, since this treatment made mechanical flaws in the outer surface in the case of the heavily sensitized stainless steel, UNSM-treatment may eliminate chromium carbide, and this flaw can be a pitting initiation site, and therefore decrease the pitting corrosion resistance.

  6. Controlling adsorption and passivation properties of bovine serum albumin on silica surfaces by ionic strength modulation and cross-linking.

    Science.gov (United States)

    Park, Jae Hyeon; Sut, Tun Naw; Jackman, Joshua A; Ferhan, Abdul Rahim; Yoon, Bo Kyeong; Cho, Nam-Joon

    2017-03-29

    Understanding the physicochemical factors that influence protein adsorption onto solid supports holds wide relevance for fundamental insights into protein structure and function as well as for applications such as surface passivation. Ionic strength is a key parameter that influences protein adsorption, although how its modulation might be utilized to prepare well-coated protein adlayers remains to be explored. Herein, we investigated how ionic strength can be utilized to control the adsorption and passivation properties of bovine serum albumin (BSA) on silica surfaces. As protein stability in solution can influence adsorption kinetics, the size distribution and secondary structure of proteins in solution were first characterized by dynamic light scattering (DLS), nanoparticle tracking analysis (NTA), and circular dichroism (CD) spectroscopy. A non-monotonic correlation between ionic strength and protein aggregation was observed and attributed to colloidal agglomeration, while the primarily α-helical character of the protein in solution was maintained in all cases. Quartz crystal microbalance-dissipation (QCM-D) experiments were then conducted in order to track protein adsorption onto silica surfaces as a function of ionic strength, and the measurement responses indicated that total protein uptake at saturation coverage is lower with increasing ionic strength. In turn, the QCM-D data and the corresponding Voigt-Voinova model analysis support that the surface area per bound protein molecule is greater with increasing ionic strength. While higher protein uptake under lower ionic strengths by itself did not result in greater surface passivation under subsequent physiologically relevant conditions, the treatment of adsorbed protein layers with a gluteraldehyde cross-linking agent stabilized the bound protein in this case and significantly improved surface passivation. Collectively, our findings demonstrate that ionic strength modulation influences BSA adsorption

  7. Surface passivation: a new way to reduce self-output in LiMn{sub 2}O{sub 4}/Li lithium ion rechargeable batteries; Passivation de surface: une nouvelle voie pour reduire l`autodecharge dans les batteries rechargeables a ions lithium LiMn{sub 2}O{sub 4}/Li

    Energy Technology Data Exchange (ETDEWEB)

    Sigala, C.; Blyr, A.; Tarascon, J.M. [Amiens Univ., 80 (France). Laboratoire de Reactivite et de Chimie des Solides; Amatucci, G. [Bellcore, (United States); Alphonse, P. [Toulouse-3 Univ., 31 (France). Laboratoire de Chimie des Materiaux Inorganiques

    1996-12-31

    The new generation of performing rechargeable lithium-ion batteries (``rocking-chair``-type) are penalized by important self-output phenomena linked with the use of highly oxidizing positive electrodes. In order to limit this problem in LiMn{sub 2}O{sub 4}/C batteries, two different passivation techniques were used in order to limit the surface contact between the positive electrode and the electrolyte. Thanks to these treatments, a significant reduction of the percentage of irreversible capacity losses is effectively observed. (J.S.) 3 refs.

  8. Surface passivation: a new way to reduce self-output in LiMn{sub 2}O{sub 4}/Li lithium ion rechargeable batteries; Passivation de surface: une nouvelle voie pour reduire l`autodecharge dans les batteries rechargeables a ions lithium LiMn{sub 2}O{sub 4}/Li

    Energy Technology Data Exchange (ETDEWEB)

    Sigala, C; Blyr, A; Tarascon, J M [Amiens Univ., 80 (France). Laboratoire de Reactivite et de Chimie des Solides; Amatucci, G [Bellcore, (United States); Alphonse, P [Toulouse-3 Univ., 31 (France). Laboratoire de Chimie des Materiaux Inorganiques

    1997-12-31

    The new generation of performing rechargeable lithium-ion batteries (``rocking-chair``-type) are penalized by important self-output phenomena linked with the use of highly oxidizing positive electrodes. In order to limit this problem in LiMn{sub 2}O{sub 4}/C batteries, two different passivation techniques were used in order to limit the surface contact between the positive electrode and the electrolyte. Thanks to these treatments, a significant reduction of the percentage of irreversible capacity losses is effectively observed. (J.S.) 3 refs.

  9. Surface Passivation of CdSe Quantum Dots in All Inorganic Amorphous Solid by Forming Cd1-xZnxSe Shell.

    Science.gov (United States)

    Xia, Mengling; Liu, Chao; Zhao, Zhiyong; Wang, Jing; Lin, Changgui; Xu, Yinsheng; Heo, Jong; Dai, Shixun; Han, Jianjun; Zhao, Xiujian

    2017-02-07

    CdSe quantum dots (QDs) doped glasses have been widely investigated for optical filters, LED color converter and other optical emitters. Unlike CdSe QDs in solution, it is difficult to passivate the surface defects of CdSe QDs in glass matrix, which strongly suppress its intrinsic emission. In this study, surface passivation of CdSe quantum dots (QDs) by Cd 1-x Zn x Se shell in silicate glass was reported. An increase in the Se/Cd ratio can lead to the partial passivation of the surface states and appearance of the intrinsic emission of CdSe QDs. Optimizing the heat-treatment condition promotes the incorporation of Zn into CdSe QDs and results in the quenching of the defect emission. Formation of CdSe/Cd 1-x Zn x Se core/graded shell QDs is evidenced by the experimental results of TEM and Raman spectroscopy. Realization of the surface passivation and intrinsic emission of II-VI QDs may facilitate the wide applications of QDs doped all inorganic amorphous materials.

  10. Ionospheric wave and irregularity measurements using passive radio astronomy techniques

    International Nuclear Information System (INIS)

    Erickson, W.C.; Mahoney, M.J.; Jacobson, A.R.; Knowles, S.H.

    1988-01-01

    The observation of midlatitude structures using passive radio astronomy techniques is discussed, with particular attention being given to the low-frequency radio telescope at the Clark Lake Radio Observatory. The present telescope operates in the 10-125-MHz frequency range. Observations of the ionosphere at separations of a few kilometers to a few hundreds of kilometers by the lines of sight to sources are possible, allowing the determination of the amplitude, wavelength, direction of propagation, and propagation speed of ionospheric waves. Data are considered on large-scale ionospheric gradients and the two-dimensional shapes and sizes of ionospheric irregularities. 10 references

  11. The Effects of Acid Passivation, Tricresyl Phosphate Presoak, and UV/Ozone Treatment on the Tribology of Perfluoropolyether-Lubricated 440C Stainless Steel Couples

    Science.gov (United States)

    Shogrin, Bradley A.; Jones, William R., Jr.; Herrera-Fierro, Pilar; Jansen, Mark J.

    2001-01-01

    The boundary-lubrication performance of two perfluoropolyether (PFPE) thin films in the presence of passivated 440C stainless steel is presented. The study used a standard ball on disk (BoD) tribometer in dry nitrogen and a vacuum spiral orbit tribometer (SOT). Stainless steel surfaces were passivated with one of four techniques: high and low temperature chromic acid bath, a tricresyl phosphate (TCP) soak, or UV/Ozone treated for 15 min. After passivation, each BoD disk had a 400A film of Krytox 16256 (PFPE) applied to it. The lifetimes of these films were quantified by measuring the number of sliding cycles before an increase in friction occurred. The lubricated lifetime of the 440C couple was not altered as a result of the various passivation techniques. The resulting surface chemistry of each passivation technique was examined using X-ray photoelectron spectroscopy (XPS). The SOT was used to examine the effects of the TCP treatment on the lubricated lifetime of another PFPE, Brayco 815Z, under rolling conditions. None of the passivation techniques were found to dramatically increase the oxide film thickness or lubricated lifetimes.

  12. Excitation of waves in plasma near the ion cyclotron frequency using surface-wave antennas with auxillary passive gaps

    International Nuclear Information System (INIS)

    Longinov, A.V.; Lukinov, V.A.

    1992-01-01

    It is proposed to use a system of auxiliary passive gaps to excite waves in a plasma traveling in one direction parallel to the magnetic field, in order to localize the radiating surface of a surface-wave antenna. Using excitation of ion Bernstein waves in the plasma as an example the main properties of such an antenna system have been studied. It is shown that the use of passive gaps permits high directionality to be achieved for the radiation and allows the size of the radiating surface of the antenna to be controlled. 10 refs., 6 figs

  13. Molecular dynamics study of solid-liquid heat transfer and passive liquid flow

    Science.gov (United States)

    Yesudasan Daisy, Sumith

    High heat flux removal is a challenging problem in boilers, electronics cooling, concentrated photovoltaic and other power conversion devices. Heat transfer by phase change is one of the most efficient mechanisms for removing heat from a solid surface. Futuristic electronic devices are expected to generate more than 1000 W/cm2 of heat. Despite the advancements in microscale and nanoscale manufacturing, the maximum passive heat flux removal has been 300 W/cm2 in pool boiling. Such limitations can be overcome by developing nanoscale thin-film evaporation based devices, which however require a better understanding of surface interactions and liquid vapor phase change process. Evaporation based passive flow is an inspiration from the transpiration process that happens in trees. If we can mimic this process and develop heat removal devices, then we can develop efficient cooling devices. The existing passive flow based cooling devices still needs improvement to meet the future demands. To improve the efficiency and capacity of these devices, we need to explore and quantify the passive flow happening at nanoscales. Experimental techniques have not advanced enough to study these fundamental phenomena at the nanoscale, an alternative method is to perform theoretical study at nanoscales. Molecular dynamics (MD) simulation is a widely accepted powerful tool for studying a range of fundamental and engineering problems. MD simulations can be utilized to study the passive flow mechanism and heat transfer due to it. To study passive flow using MD, apart from the conventional methods available in MD, we need to have methods to simulate the heat transfer between solid and liquid, local pressure, surface tension, density, temperature calculation methods, realistic boundary conditions, etc. Heat transfer between solid and fluids has been a challenging area in MD simulations, and has only been minimally explored (especially for a practical fluid like water). Conventionally, an

  14. Passivation effect on optical and electrical properties of molecular beam epitaxy-grown HgCdTe/CdTe/Si layers

    Science.gov (United States)

    Kiran, Rajni; Mallick, Shubhrangshu; Hahn, Suk-Ryong; Lee, T. S.; Sivananthan, Sivalingam; Ghosh, Siddhartha; Wijewarnasuriya, P. S.

    2006-06-01

    The effects of passivation with two different passivants, ZnS and CdTe, and two different passivation techniques, physical vapor deposition (PVD) and molecular beam epitaxy (MBE), were quantified in terms of the minority carrier lifetime and extracted surface recombination velocity on both MBE-grown medium-wavelength ir (MWIR) and long-wavelength ir HgCdTe samples. A gradual increment of the minority carrier lifetime was reported as the passivation technique was changed from PVD ZnS to PVD CdTe, and finally to MBE CdTe, especially at low temperatures. A corresponding reduction in the extracted surface recombination velocity in the same order was also reported for the first time. Initial data on the 1/ f noise values of as-grown MWIR samples showed a reduction of two orders of noise power after 1200-Å ZnS deposition.

  15. The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices.

    Science.gov (United States)

    Carrad, D J; Burke, A M; Reece, P J; Lyttleton, R W; Waddington, D E J; Rai, A; Reuter, D; Wieck, A D; Micolich, A P

    2013-08-14

    We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements; we show that while (NH4)2Sx treatment gives a 40-60 ×  increase in photoluminescence intensity for the (100) surface, an increase of only 2-3 ×  is obtained for the (311)A surface. A corresponding lack of reproducible improvement in the gate hysteresis of (311)A heterostructure transistor devices made with the passivation treatment performed immediately prior to gate deposition is also found. We discuss possible reasons why sulfur passivation is ineffective for (311)A GaAs, and propose alternative strategies for passivation of this surface.

  16. The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices

    International Nuclear Information System (INIS)

    Carrad, D J; Burke, A M; Reece, P J; Lyttleton, R W; Waddington, D E J; Micolich, A P; Rai, A; Reuter, D; Wieck, A D

    2013-01-01

    We have studied the efficacy of (NH 4 ) 2 S x surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH 4 ) 2 S x solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements; we show that while (NH 4 ) 2 S x treatment gives a 40–60 × increase in photoluminescence intensity for the (100) surface, an increase of only 2–3 × is obtained for the (311)A surface. A corresponding lack of reproducible improvement in the gate hysteresis of (311)A heterostructure transistor devices made with the passivation treatment performed immediately prior to gate deposition is also found. We discuss possible reasons why sulfur passivation is ineffective for (311)A GaAs, and propose alternative strategies for passivation of this surface. (paper)

  17. Crystalline Silicon Solar Cells with Thin Silicon Passivation Film Deposited prior to Phosphorous Diffusion

    Directory of Open Access Journals (Sweden)

    Ching-Tao Li

    2014-01-01

    Full Text Available We demonstrate the performance improvement of p-type single-crystalline silicon (sc-Si solar cells resulting from front surface passivation by a thin amorphous silicon (a-Si film deposited prior to phosphorus diffusion. The conversion efficiency was improved for the sample with an a-Si film of ~5 nm thickness deposited on the front surface prior to high-temperature phosphorus diffusion, with respect to the samples with an a-Si film deposited on the front surface after phosphorus diffusion. The improvement in conversion efficiency is 0.4% absolute with respect to a-Si film passivated cells, that is, the cells with an a-Si film deposited on the front surface after phosphorus diffusion. The new technique provided a 0.5% improvement in conversion efficiency compared to the cells without a-Si passivation. Such performance improvements result from reduced surface recombination as well as lowered contact resistance, the latter of which induces a high fill factor of the solar cell.

  18. A novel and sensitive fluorescence sensor for glutathione detection by controlling the surface passivation degree of carbon quantum dots.

    Science.gov (United States)

    Pan, Jiahong; Zheng, Zengyao; Yang, Jianying; Wu, Yaoyu; Lu, Fushen; Chen, Yaowen; Gao, Wenhua

    2017-05-01

    A novel fluorescence sensor based on controlling the surface passivation degree of carbon quantum dots (CQDs) was developed for glutathione (GSH) detection. First, we found that the fluorescence intensity of the CQDs which was obtained by directly pyrolyzing citric acid would increased largely after the surface passivation treatment by 1-ethyl-3-(3-dimethylaminopropyl)-carbodiimide (EDC). In the light of this phenomenon, we designed a simple, rapid and selective fluorescence sensor based on the surface passivated CQDs. A certain and excess amount of EDC were mixed with GSH, part of EDC would form a stable complex with GSH owing to the exposed sulfhydryl group of GSH. As the synthesized CQDs were added into the above mixture solution, the fluorescence intensity of the (EDC/GSH)/CQDs mixture solution could be directly related to the amount of GSH. Compared to other fluorescence analytical methods, the fluorescence sensor we design is neither the traditional fluorescent "turn on" probes nor "turn off" probes. It is a new fluorescence analytical method that target object indirectly control the surface passivation degree of CQDs so that it can realize the detection of the target object. Moreover, the proposed method manifested great advantages including short analysis time, low cost and ease of operation. Copyright © 2017 Elsevier B.V. All rights reserved.

  19. Relation of lifetime to surface passivation for atomic-layer-deposited Al2O3 on crystalline silicon solar cell

    International Nuclear Information System (INIS)

    Cho, Young Joon; Song, Hee Eun; Chang, Hyo Sik

    2015-01-01

    Highlights: • We investigated the relation of potassium contamination on Si solar wafer to lifetime. • We deposited Al 2 O 3 layer by atomic layer deposition (ALD) on Si solar wafer after several cleaning process. • Potassium can be left on Si surface by incomplete cleaning process and degrade the Al 2 O 3 passivation quality. - Abstract: We investigated the relation of potassium contamination on a crystalline silicon (c-Si) surface after potassium hydroxide (KOH) etching to the lifetime of the c-Si solar cell. Alkaline solution was employed for saw damage removal (SDR), texturing, and planarization of a textured c-Si solar wafer prior to atomic layer deposition (ALD) Al 2 O 3 growth. In the solar-cell manufacturing process, ALD Al 2 O 3 passivation is utilized to obtain higher conversion efficiency. ALD Al 2 O 3 shows excellent surface passivation, though minority carrier lifetime varies with cleaning conditions. In the present study, we investigated the relation of potassium contamination to lifetime in solar-cell processing. The results showed that the potassium-contaminated samples, due to incomplete cleaning of KOH, had a short lifetime, thus establishing that residual potassium can degrade Al 2 O 3 surface passivation

  20. An investigation into the effective surface passivation of quantum dots by a photo-assisted chemical method

    Directory of Open Access Journals (Sweden)

    So-Yeong Joo

    2018-01-01

    Full Text Available In this study, we have developed an effective amino passivation process for quantum dots (QDs at room temperature and have investigated a passivation mechanism using a photo-assisted chemical method. As a result of the reverse reaction of the H2O molecules, the etching kinetics of the photo-assisted chemical method increased upon increasing the 3-amino-1-propanol (APOL/H2O ratio of the etching solution. Photon-excited electron-hole pairs lead to strong bonding between the organic and surface atoms of the QDs, and results in an increase of the quantum yield (QY%. This passivation method is also applicable to CdSe/ZnSe core/shell structures of QDs, due to the passivation of mid-gap defects states at the interface. The QY% of the as-synthesized CdSe QDs is dramatically enhanced by the amino passivation from 37% to 75% and the QY% of the CdSe/ZnSe core/shell QDs is also improved by ∼28%.

  1. Efficiency improvement of multicrystalline silicon solar cells after surface and grain boundaries passivation using vanadium oxide

    Energy Technology Data Exchange (ETDEWEB)

    Derbali, L., E-mail: rayan.slat@yahoo.fr [Photovoltaiec Laboratory, Research and Technology Center of Energy, Technopole de Borj-Cedria, BP 95, Hammam-Lif 2050 (Tunisia); Ezzaouia, H. [Photovoltaiec Laboratory, Research and Technology Center of Energy, Technopole de Borj-Cedria, BP 95, Hammam-Lif 2050 (Tunisia)

    2012-08-01

    Highlights: Black-Right-Pointing-Pointer Evaporation of vanadium pentoxide onto the front surface leads to reduce the surface reflectivity considerably. Black-Right-Pointing-Pointer An efficient surface passivation can be obtained after thermal treatment of obtained films. Black-Right-Pointing-Pointer Efficiency of the obtained solar cells has been improved noticeably after thermal treatment of deposited thin films. - Abstract: The aim of this work is to investigate the effect of vanadium oxide deposition onto the front surface of multicrystalline silicon (mc-Si) substrat, without any additional cost in the fabrication process and leading to an efficient surface and grain boundaries (GBs) passivation that have not been reported before. The lowest reflectance of mc-Si coated with vanadium oxide film of 9% was achieved by annealing the deposited film at 600 Degree-Sign C. Vanadium pentoxide (V{sub 2}O{sub 5}) were thermally evaporated onto the surface of mc-Si substrates, followed by a short annealing duration at a temperature ranging between 600 Degree-Sign C and 800 Degree-Sign C, under O{sub 2} atmosphere. The chemical composition of the films was analyzed by means of Fourier transform infrared spectroscopy (FTIR). Surface and cross-section morphology were determined by atomic force microscope (AFM) and a scanning electron microscope (SEM), respectively. The deposited vanadium oxide thin films make the possibility of combining in one processing step an antireflection coating deposition along with efficient surface state passivation, as compared to a reference wafer. Silicon solar cells based on untreated and treated mc-Si wafers were achieved. We showed that mc-silicon solar cells, subjected to the above treatment, have better short circuit currents and open-circuit voltages than those made from untreated wafers. Thus, the efficiency of obtained solar cells has been improved.

  2. Efficiency improvement of multicrystalline silicon solar cells after surface and grain boundaries passivation using vanadium oxide

    International Nuclear Information System (INIS)

    Derbali, L.; Ezzaouia, H.

    2012-01-01

    Highlights: ► Evaporation of vanadium pentoxide onto the front surface leads to reduce the surface reflectivity considerably. ► An efficient surface passivation can be obtained after thermal treatment of obtained films. ► Efficiency of the obtained solar cells has been improved noticeably after thermal treatment of deposited thin films. - Abstract: The aim of this work is to investigate the effect of vanadium oxide deposition onto the front surface of multicrystalline silicon (mc-Si) substrat, without any additional cost in the fabrication process and leading to an efficient surface and grain boundaries (GBs) passivation that have not been reported before. The lowest reflectance of mc-Si coated with vanadium oxide film of 9% was achieved by annealing the deposited film at 600 °C. Vanadium pentoxide (V 2 O 5 ) were thermally evaporated onto the surface of mc-Si substrates, followed by a short annealing duration at a temperature ranging between 600 °C and 800 °C, under O 2 atmosphere. The chemical composition of the films was analyzed by means of Fourier transform infrared spectroscopy (FTIR). Surface and cross-section morphology were determined by atomic force microscope (AFM) and a scanning electron microscope (SEM), respectively. The deposited vanadium oxide thin films make the possibility of combining in one processing step an antireflection coating deposition along with efficient surface state passivation, as compared to a reference wafer. Silicon solar cells based on untreated and treated mc-Si wafers were achieved. We showed that mc-silicon solar cells, subjected to the above treatment, have better short circuit currents and open-circuit voltages than those made from untreated wafers. Thus, the efficiency of obtained solar cells has been improved.

  3. Surface blemish detection from passive imagery using learned fuzzy set concepts

    International Nuclear Information System (INIS)

    Gurbuz, S.; Carver, A.; Schalkoff, R.

    1997-12-01

    An image analysis method for real-time surface blemish detection using passive imagery and fuzzy set concepts is described. The method develops an internal knowledge representation for surface blemish characteristics on the basis of experience, thus facilitating autonomous learning based upon positive and negative exemplars. The method incorporates fuzzy set concepts in the learning subsystem and image segmentation algorithms, thereby mimicking human visual perception. This enables a generic solution for color image segmentation. This method has been applied in the development of ARIES (Autonomous Robotic Inspection Experimental System), designed to inspect DOE warehouse waste storage drums for rust. In this project, the ARIES vision system is used to acquire drum surface images under controlled conditions and subsequently perform visual inspection leading to the classification of the drum as acceptable or suspect

  4. Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zaidi, Z. H., E-mail: zaffar.zaidi@sheffield.ac.uk; Lee, K. B.; Qian, H.; Jiang, S.; Houston, P. A. [Department of Electronic and Electrical Engineering, The University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom); Guiney, I.; Wallis, D. J.; Humphreys, C. J. [Department of Materials Science and Metallurgy, The University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2014-12-28

    In this work, we have compared SiN{sub x} passivation, hydrogen peroxide, and sulfuric acid treatment on AlGaN/GaN HEMTs surface after full device fabrication on Si substrate. Both the chemical treatments resulted in the suppression of device pinch-off gate leakage current below 1 μA/mm, which is much lower than that for SiN{sub x} passivation. The greatest suppression over the range of devices is observed with the sulfuric acid treatment. The device on/off current ratio is improved (from 10{sup 4}–10{sup 5} to 10{sup 7}) and a reduction in the device sub-threshold (S.S.) slope (from ∼215 to 90 mV/decade) is achieved. The sulfuric acid is believed to work by oxidizing the surface which has a strong passivating effect on the gate leakage current. The interface trap charge density (D{sub it}) is reduced (from 4.86 to 0.90 × 10{sup 12 }cm{sup −2} eV{sup −1}), calculated from the change in the device S.S. The gate surface leakage current mechanism is explained by combined Mott hopping conduction and Poole Frenkel models for both untreated and sulfuric acid treated devices. Combining the sulfuric acid treatment underneath the gate with the SiN{sub x} passivation after full device fabrication results in the reduction of D{sub it} and improves the surface related current collapse.

  5. Effect of PECVD SiNx/SiOy Nx –Si interface property on surface passivation of silicon wafer

    International Nuclear Information System (INIS)

    Jia Xiao-Jie; Zhou Chun-Lan; Zhou Su; Wang Wen-Jing; Zhu Jun-Jie

    2016-01-01

    It is studied in this paper that the electrical characteristics of the interface between SiO y N x /SiN x stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiO y N x layer on interface parameters, such as interface state density Di t and fixed charge Q f , and the surface passivation quality of silicon are observed. Capacitance–voltage measurements reveal that inserting a thin SiO y N x layer between the SiN x and the silicon wafer can suppress Q f in the film and D it at the interface. The positive Q f and D it and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiO y N x film increasing. Prepared by deposition at a low temperature and a low ratio of N 2 O/SiH 4 flow rate, the SiO y N x /SiN x stacks result in a low effective surface recombination velocity (S eff ) of 6 cm/s on a p-type 1 Ω·cm–5 Ω·cm FZ silicon wafer. The positive relationship between S eff and D it suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. (paper)

  6. Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Zaidi, Z. H.; Lee, K. B.; Qian, H.; Jiang, S.; Houston, P. A.; Guiney, I.; Wallis, D. J.; Humphreys, C. J.

    2014-01-01

    In this work, we have compared SiN x passivation, hydrogen peroxide, and sulfuric acid treatment on AlGaN/GaN HEMTs surface after full device fabrication on Si substrate. Both the chemical treatments resulted in the suppression of device pinch-off gate leakage current below 1 μA/mm, which is much lower than that for SiN x passivation. The greatest suppression over the range of devices is observed with the sulfuric acid treatment. The device on/off current ratio is improved (from 10 4 –10 5 to 10 7 ) and a reduction in the device sub-threshold (S.S.) slope (from ∼215 to 90 mV/decade) is achieved. The sulfuric acid is believed to work by oxidizing the surface which has a strong passivating effect on the gate leakage current. The interface trap charge density (D it ) is reduced (from 4.86 to 0.90 × 10 12  cm −2 eV −1 ), calculated from the change in the device S.S. The gate surface leakage current mechanism is explained by combined Mott hopping conduction and Poole Frenkel models for both untreated and sulfuric acid treated devices. Combining the sulfuric acid treatment underneath the gate with the SiN x passivation after full device fabrication results in the reduction of D it and improves the surface related current collapse

  7. Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation

    International Nuclear Information System (INIS)

    Shiozaki, Nanako; Anantathanasarn, Sanguan; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, Hideki

    2005-01-01

    Etched GaAs quantum wires (QWRs) and selectively grown (SG) QWRs were fabricated, and dependence of their photoluminescence (PL) properties on QWR width (W) and QWR distance to surface (d) were investigated. PL intensity greatly reduced with reduction of W and d, due to non-radiative recombination through surface states. Surface passivation by growing a Si interface control layer (Si-ICL) on group III-terminated surfaces greatly improved PL properties

  8. Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

    Science.gov (United States)

    Hayes, M.; Chen, H.; Chattopadhyay, K.; Burger, A.; James, R. B.

    1998-01-01

    The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

  9. High-Pressure Water-Vapor Annealing for Enhancement of a-Si:H Film Passivation of Silicon Surface

    International Nuclear Information System (INIS)

    Guo Chun-Lin; Wang Lei; Zhang Yan-Rong; Zhou Hai-Feng; Liang Feng; Yang Zhen-Hui; Yang De-Ren

    2014-01-01

    We investigate the effect of amorphous hydrogenated silicon (a-Si:H) films passivated on silicon surfaces based on high-pressure water-vapor annealing (HWA). The effective carrier lifetime of samples reaches the maximum value after 210°C, 90min HWA. Capacitance-voltage measurement reveals that the HWA not only greatly reduces the density of interface states (D it ), but also decreases the fixed charges (Q fixed ) mainly caused by bulk defects. The change of hydrogen and oxygen in the film is measured by a spectroscopic ellipsometer and a Fourier-transform infrared (FTIR) spectrometer. All these results show that HWA is a useful method to improve the passivation effect of a-Si:H films deposited on silicon surfaces

  10. On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

    NARCIS (Netherlands)

    Hoex, B.; Gielis, J.J.H.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2008-01-01

    Al2 O3 is a versatile high- ¿ dielectric that has excellent surface passivation properties on crystalline Si (c-Si), which are of vital importance for devices such as light emitting diodes and high-efficiency solar cells. We demonstrate both experimentally and by simulations that the surface

  11. Chemical and toxicologic assessment of organic contaminants in surface water using passive samplers

    Science.gov (United States)

    Alvarez, D.A.; Cranor, W.L.; Perkins, S.D.; Clark, R.C.; Smith, S.B.

    2008-01-01

    Passive sampling methodologies were used to conduct a chemical and toxicologic assessment of organic contaminants in the surface waters of three geographically distinct agricultural watersheds. A selection of current-use agrochemicals and persistent organic pollutants, including polycyclic aromatic hydrocarbons, polychlorinated biphenyls, and organochlorine pesticides, were targeted using the polar organic chemical integrative sampler (POCIS) and the semipermeable membrane device passive samplers. In addition to the chemical analysis, the Microtox assay for acute toxicity and the yeast estrogen screen (YES) were conducted as potential assessment tools in combination with the passive samplers. During the spring of 2004, the passive samplers were deployed for 29 to 65 d at Leary Weber Ditch, IN; Morgan Creek, MD; and DR2 Drain, WA. Chemical analysis of the sampler extracts identified the agrochemicals predominantly used in those areas, including atrazine, simazine, acetochlor, and metolachlor. Other chemicals identified included deethylatrazine and deisopropylatrazine, trifluralin, fluoranthene, pyrene, cis- and trans-nonachlor, and pentachloroanisole. Screening using Microtox resulted in no acutely toxic samples. POCIS samples screened by the YES assay failed to elicit a positive estrogenic response. Copyright ?? 2008 by the American Society of Agronomy, Crop Science Society of America, and Soil Science Society of America. All rights reserved.

  12. Passivating surface states on water splitting hematite photoanodes with alumina overlayers

    KAUST Repository

    Le Formal, Florian; Té treault, Nicolas; Cornuz, Maurin; Moehl, Thomas; Grä tzel, Michael; Sivula, Kevin

    2011-01-01

    Hematite is a promising material for inexpensive solar energy conversion via water splitting but has been limited by the large overpotential (0.5-0.6 V) that must be applied to afford high water oxidation photocurrent. This has conventionally been addressed by coating it with a catalyst to increase the kinetics of the oxygen evolution reaction. However, surface recombination at trapping states is also thought to be an important factor for the overpotential, and herein we investigate a strategy to passivate trapping states using conformal overlayers applied by atomic layer deposition. While TiO2 overlayers show no beneficial effect, we find that an ultra-thin coating of Al2O3 reduces the overpotential required with state-of-the-art nano-structured photo-anodes by as much as 100 mV and increases the photocurrent by a factor of 3.5 (from 0.24 mA cm-2 to 0.85 mA cm-2) at +1.0 V vs. the reversible hydrogen electrode (RHE) under standard illumination conditions. The subsequent addition of Co2+ ions as a catalyst further decreases the overpotential and leads to a record photocurrent density at 0.9 V vs. RHE (0.42 mA cm-2). A detailed investigation into the effect of the Al2O3 overlayer by electrochemical impedance and photoluminescence spectroscopy reveals a significant change in the surface capacitance and radiative recombination, respectively, which distinguishes the observed overpotential reduction from a catalytic effect and confirms the passivation of surface states. Importantly, this work clearly demonstrates that two distinct loss processes are occurring on the surface of high-performance hematite and suggests a viable route to individually address them. © The Royal Society of Chemistry 2011.

  13. Passivating surface states on water splitting hematite photoanodes with alumina overlayers

    KAUST Repository

    Le Formal, Florian

    2011-01-24

    Hematite is a promising material for inexpensive solar energy conversion via water splitting but has been limited by the large overpotential (0.5-0.6 V) that must be applied to afford high water oxidation photocurrent. This has conventionally been addressed by coating it with a catalyst to increase the kinetics of the oxygen evolution reaction. However, surface recombination at trapping states is also thought to be an important factor for the overpotential, and herein we investigate a strategy to passivate trapping states using conformal overlayers applied by atomic layer deposition. While TiO2 overlayers show no beneficial effect, we find that an ultra-thin coating of Al2O3 reduces the overpotential required with state-of-the-art nano-structured photo-anodes by as much as 100 mV and increases the photocurrent by a factor of 3.5 (from 0.24 mA cm-2 to 0.85 mA cm-2) at +1.0 V vs. the reversible hydrogen electrode (RHE) under standard illumination conditions. The subsequent addition of Co2+ ions as a catalyst further decreases the overpotential and leads to a record photocurrent density at 0.9 V vs. RHE (0.42 mA cm-2). A detailed investigation into the effect of the Al2O3 overlayer by electrochemical impedance and photoluminescence spectroscopy reveals a significant change in the surface capacitance and radiative recombination, respectively, which distinguishes the observed overpotential reduction from a catalytic effect and confirms the passivation of surface states. Importantly, this work clearly demonstrates that two distinct loss processes are occurring on the surface of high-performance hematite and suggests a viable route to individually address them. © The Royal Society of Chemistry 2011.

  14. Electrochemically formed passive layers on titanium - preparation and biocompatibility assessment in Hank's balanced salt solution

    International Nuclear Information System (INIS)

    Zhao, B.; Jerkiewicz, G.

    2006-01-01

    Uniform and crack-free passive layers on Ti are prepared using AC voltage in 7.5 wt.% aq. NH 4 ·BF 4 at 25 o C. The passive layers possess coloration (wide spectrum of colors) that depends on the experimental conditions. The biocompatibility of such prepared passive layers is evaluated using corrosion science and analytical techniques. Their corrosion behavior, Ti-ion release, surface roughness, and wettability in Hank's Balanced Salt Solution (HBSS) at 37 o C are the main focus of this work. Open-circuit potential and polarization measurements demonstrate that the corrosion potential (E corr ) of the passive layers becomes more positive than that of the untreated Ti. The value of E corr increases as we increase the AC voltage (VAC). Their corrosion rate (CR) is lower than that of the untreated Ti, and they reduced the Ti-ion release level from 230 to 15 ppb. An increase in the AC voltage frequency (f) leads to a slightly higher level of the Ti-ion release (∼50 ppb). Surface profilometry, optical microscopy, and scanning electron microscopy (SEM) analyses show that prolonged exposure of the passive layers to HBSS results in changes to their surface topography. The passive layers prepared by the application of AC voltage are rougher and more hydrophilic than the untreated Ti. Our methodology of preparing biocompatible passive layers on Ti might be applied as a new surface treatment procedure for Ti implants. (author)

  15. High-mobility germanium p-MOSFETs by using HCl and (NH4)2S surface passivation

    International Nuclear Information System (INIS)

    Xue Bai-Qing; Wang Sheng-Kai; Han Le; Chang Hu-Dong; Sun Bing; Zhao Wei; Liu Hong-Gang

    2013-01-01

    To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications, a simple chemical cleaning and surface passivation scheme is introduced, and Ge p-MOSFETs with effective channel hole mobility up to 665 cm 2 /V·s are demonstrated on a Ge (111) substrate. Moreover, a physical model is proposed to explain the dipole layer formation at the metal—oxide—semiconductor (MOS) interface by analyzing the electrical characteristics of HCl- and (NH 4 ) 2 S-passivated samples. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  16. Techniques for removing contaminated concrete surfaces

    International Nuclear Information System (INIS)

    Halter, J.M.; Sullivan, R.G.

    1981-01-01

    This discussion compares various techniques that have been used to clean concrete surfaces by removing the surface. Three techniques which have been investigated by the Pacific Northwest Laboratory for removing surfaces are also described: the water cannon, the concrete spaller, and high-pressure water jet. The equipment was developed with the assumption that removal of the top 1/8 to 1/4 in. of surface would remove most of the contamination. If the contamination has gone into cracks or deep voids in the surface, the removal processes can be repeated until the surface is acceptable

  17. Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.

    Science.gov (United States)

    Luo, Hao; Liang, Lingyan; Cao, Hongtao; Dai, Mingzhi; Lu, Yicheng; Wang, Mei

    2015-08-12

    For ultrathin semiconductor channels, the surface and interface nature are vital and often dominate the bulk properties to govern the field-effect behaviors. High-performance thin-film transistors (TFTs) rely on the well-defined interface between the channel and gate dielectric, featuring negligible charge trap states and high-speed carrier transport with minimum carrier scattering characters. The passivation process on the back-channel surface of the bottom-gate TFTs is indispensable for suppressing the surface states and blocking the interactions between the semiconductor channel and the surrounding atmosphere. We report a dielectric layer for passivation of the back-channel surface of 20 nm thick tin monoxide (SnO) TFTs to achieve ambipolar operation and complementary metal oxide semiconductor (CMOS) like logic devices. This chemical passivation reduces the subgap states of the ultrathin channel, which offers an opportunity to facilitate the Fermi level shifting upward upon changing the polarity of the gate voltage. With the advent of n-type inversion along with the pristine p-type conduction, it is now possible to realize ambipolar operation using only one channel layer. The CMOS-like logic inverters based on ambipolar SnO TFTs were also demonstrated. Large inverter voltage gains (>100) in combination with wide noise margins are achieved due to high and balanced electron and hole mobilities. The passivation also improves the long-term stability of the devices. The ability to simultaneously achieve field-effect inversion, electrical stability, and logic function in those devices can open up possibilities for the conventional back-channel surface passivation in the CMOS-like electronics.

  18. PHOTOGRAMMETRIC TECHNIQUES FOR ROAD SURFACE ANALYSIS

    Directory of Open Access Journals (Sweden)

    V. A. Knyaz

    2016-06-01

    Full Text Available The quality and condition of a road surface is of great importance for convenience and safety of driving. So the investigations of the behaviour of road materials in laboratory conditions and monitoring of existing roads are widely fulfilled for controlling a geometric parameters and detecting defects in the road surface. Photogrammetry as accurate non-contact measuring method provides powerful means for solving different tasks in road surface reconstruction and analysis. The range of dimensions concerned in road surface analysis can have great variation from tenths of millimetre to hundreds meters and more. So a set of techniques is needed to meet all requirements of road parameters estimation. Two photogrammetric techniques for road surface analysis are presented: for accurate measuring of road pavement and for road surface reconstruction based on imagery obtained from unmanned aerial vehicle. The first technique uses photogrammetric system based on structured light for fast and accurate surface 3D reconstruction and it allows analysing the characteristics of road texture and monitoring the pavement behaviour. The second technique provides dense 3D model road suitable for road macro parameters estimation.

  19. A passive technique using SSNTDs for Estimation of thorium to uranium ratios in rocks

    International Nuclear Information System (INIS)

    Kenawy, M.A.; Sayyah, T.A.; Said, A.F.; Hafez, A.F.

    2005-01-01

    A passive technique using plastic nuclear track detectors (CR-39 and LR-115) is presented to estimate Th/U ratios and consequently the thorium and uranium content in granites taken from uranium exploration mines in Egyptian desert. The registration sensitivities of both CR-39 and LR-115 detector for close contact alpha-radiography uranium and thorium concentrations in ppm were computed

  20. Concept research on general passive system

    International Nuclear Information System (INIS)

    Han Xu; Yang Yanhua; Zheng Mingguang

    2009-01-01

    This paper summarized the current passive techniques used in nuclear power plants. Through classification and analysis, the functional characteristics and inherent identification of passive systems were elucidated. By improving and extending the concept of passive system, the general passive concept was proposed, and space and time relativity was discussed and assumption of general passive system were illustrated. The function of idealized general passive system is equivalent with the current passive system, but the design of idealized general passive system is more flexible. (authors)

  1. Surface analysis the principal techniques

    CERN Document Server

    Vickerman, John C

    2009-01-01

    This completely updated and revised second edition of Surface Analysis: The Principal Techniques, deals with the characterisation and understanding of the outer layers of substrates, how they react, look and function which are all of interest to surface scientists. Within this comprehensive text, experts in each analysis area introduce the theory and practice of the principal techniques that have shown themselves to be effective in both basic research and in applied surface analysis. Examples of analysis are provided to facilitate the understanding of this topic and to show readers how they c

  2. Nanotribological properties of precision-controlled regular nanotexture on H-passivated Si surface by current-induced local anodic oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Mo Yufei; Zhao Wenjie; Huang Deming; Zhao Fei [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Bai Mingwu [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)], E-mail: mwbai@LZB.ac.cn

    2009-02-15

    Nano-sized textures resulted from localized electrochemical oxidation by using atomic force microscopy (AFM) were fabricated on H-passivated Si surface. In this paper, the fabrication and nanotribological properties of nanotexture by local anodic oxidation (LAO) on H-passivated Si surface are presented. A special attention is paid to find the relation between the size of oxide nanotexture and operational parameters such as tip-sample pulsed bias voltage, pulsewidth, and relative humidity to fabricate oxide nanotexture. The nanotribological properties were investigated by a colloidal probe. The results indicate that the nanotextures exhibited low adhesion and greatly reduced friction force at nanometer scale.

  3. Active/passive microwave sensor comparison of MIZ-ice concentration estimates. [Marginal Ice Zone (MIZ)

    Science.gov (United States)

    Burns, B. A.; Cavalieri, D. J.; Keller, M. R.

    1986-01-01

    Active and passive microwave data collected during the 1984 summer Marginal Ice Zone Experiment in the Fram Strait (MIZEX 84) are used to compare ice concentration estimates derived from synthetic aperture radar (SAR) data to those obtained from passive microwave imagery at several frequencies. The comparison is carried out to evaluate SAR performance against the more established passive microwave technique, and to investigate discrepancies in terms of how ice surface conditions, imaging geometry, and choice of algorithm parameters affect each sensor. Active and passive estimates of ice concentration agree on average to within 12%. Estimates from the multichannel passive microwave data show best agreement with the SAR estimates because the multichannel algorithm effectively accounts for the range in ice floe brightness temperatures observed in the MIZ.

  4. Si surface passivation by SiOx:H films deposited by a low-frequency ICP for solar cell applications

    International Nuclear Information System (INIS)

    Zhou, H P; Wei, D Y; Xu, S; Xiao, S Q; Xu, L X; Huang, S Y; Guo, Y N; Khan, S; Xu, M

    2012-01-01

    Hydrogenated silicon suboxide (SiO x :H) thin films are fabricated by a low-frequency inductively coupled plasma of hydrogen-diluted SiH 4 + CO 2 at a low temperature (100 °C). Introduction of a small amount of oxygen into the film results in a predominantly amorphous structure, wider optical bandgap, increased H content, lower conductivity and higher activation energy. The minority carrier lifetime in the SiO x :H-passivated p-type Si substrate is up to 428 µs with a reduced incubation layer at the interface. The associated surface recombination velocity is as low as 70 cm s -1 . The passivation behaviour dominantly originates from the H-related chemical passivation. The passivation effect is also demonstrated by the excellent photovoltaic performance of the heterojunction solar cell with the SiO x :H-based passivation and emitter layers.

  5. In-situ X-ray photoelectron spectroscopy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors

    Energy Technology Data Exchange (ETDEWEB)

    Akazawa, Masamichi; Hasegawa, Hideki; Jia, Rui [Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, N-13, W-8, Sapporo 060-8628 (Japan)

    2007-04-15

    Detailed properties of the Si interface control layer (Si ICL)-based surface passivation structure are characterized by in-situ X-ray photoelectron spectroscopy (XPS) in an ultra-high vacuum multi-chamber system. Si ICLs were grown by molecular beam epitaxy (MBE) on GaAs and AlGaAs(001) and (111)B surfaces, and were partially converted to SiN{sub x} by nitrogen radical beam. Freshly MBE-grown clean GaAs and AlGaAs surfaces showed strong Fermi level pinning. Large shifts of the surface Fermi level position corresponding to reduction of pinning took place after Si ICL growth, particularly on (111)B surface (around 500 meV). However, subsequent surface nitridation increased pinning again. Then, a significant reduction of pinning was obtained by changing SiN{sub x} to silicon oxynitride by intentional air-exposure and subsequent annealing. This has led to realization of a stable passivation structure with an ultrathin oxynitride/Si ICL structure which prevented subcutaneous oxidation during further device processing under air-exposure. The Si-ICL-based passivation process was applied to surface passivation of quantum wire (QWR) transistors where anomalously large side-gating phenomenon was completely eliminated. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Accuracy of implant transfer with open-tray and closed-tray impression techniques and surface detail reproduction of the tooth during impression

    Directory of Open Access Journals (Sweden)

    Hakimeh Siadat

    2012-01-01

    Full Text Available Background and Aims: Accurate recording of implant location is required to achieve passive fit and have the implants without stress concentration. The aim of this in-vitro study was to evaluate the dimensional and angular accuracy of open-tray and closed-tray impression techniques using polyether impression material and also to assess the surface detail reproduction of the tooth while impression making.Materials and Methods: One reference metal model with 2 implants (Implantium on the position of the maxillary second premolar and first molar and one molar tooth for evaluation of surface details was prepared. 27 polyether impressions of these models were made (9 using open-tray, 9 using closed-tray techniques and 9 were made just of the surface of the teeth without any implants. Impressions were poured with ADA type IV stone. Coordinate Measuring Machine was used for measuring the dimensional accuracy and video measuring machine for surface detail reproduction. All of these measurements were compared with the measurements on the reference model. Data were analyzed by and compared by T-test and One-way ANOVA.Results: There was a significant statistical difference between open-tray and closed-tray techniques (P0.05.Conclusion: The accuracy of open-tray impression technique was more than closed-tray technique. The surface detail reproduction of the tooth was not affected by impression technique.

  7. Nonlinear optical techniques for surface studies

    International Nuclear Information System (INIS)

    Shen, Y.R.

    1981-09-01

    Recent effort in developing nonlinear optical techniques for surface studies is reviewed. Emphasis is on monolayer detection of adsorbed molecules on surfaces. It is shown that surface coherent antiStokes Raman scattering (CARS) with picosecond pulses has the sensitivity of detecting submonolayer of molecules. On the other hand, second harmonic or sum-frequency generation is also sensitive enough to detect molecular monolayers. Surface-enhanced nonlinear optical effects on some rough metal surfaces have been observed. This facilitates the detection of molecular monolayers on such surfaces, and makes the study of molecular adsorption at a liquid-metal interface feasible. Advantages and disadvantages of the nonlinear optical techniques for surface studies are discussed

  8. Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors

    International Nuclear Information System (INIS)

    Tan, W.S.; Parbrook, P.J.; Hill, G.; Airey, R.J.; Houston, P.A.

    2002-01-01

    Different dielectrics were used for post-processing surface passivation of AlGaN/GaN heterostructure field-effect transistors (HFETs) and the resulting electrical characteristics examined. An increase in the maximum drain current of approximately 25% was observed after Si 3 N 4 and SiO 2 deposition and ∼15% for annealed SiO on AlGaN/GaN HFETs. In all cases, the passivation was found to increase the gate leakage current with an observed reduction in the leakage activation energy. However, the rise in gate leakage current was least for SiO. The plasma enhanced chemical vapour deposition method was found not to contribute to the passivation mechanism, whilst the presence of Si appears to be an important factor. (author)

  9. Temporal observations of surface soil moisture using a passive microwave sensor

    International Nuclear Information System (INIS)

    Jackson, T.J.; O'Neill, P.

    1987-01-01

    A series of 10 aircraft flights was conducted over agricultural fields to evaluate relationships between observed surface soil moisture and soil moisture predicted using passive microwave sensor observations. An a priori approach was used to predict values of surface soil moisture for three types of fields: tilled corn, no-till corn with soybean stubble, and idle fields with corn stubble. Acceptable predictions were obtained for the tilled corn fields, while poor results were obtained for the others. The source of error is suspected to be the density and orientation of the surface stubble layer; however, further research is needed to verify this explanation. Temporal comparisons between observed, microwave predicted, and soil water-simulated moisture values showed similar patterns for tilled well-drained fields. Divergences between the observed and simulated measurements were apparent on poorly drained fields. This result may be of value in locating and mapping hydrologic contributing areas

  10. Isotropic and anisotropic surface wave cloaking techniques

    International Nuclear Information System (INIS)

    McManus, T M; Spada, L La; Hao, Y

    2016-01-01

    In this paper we compare two different approaches for surface waves cloaking. The first technique is a unique application of Fermat’s principle and requires isotropic material properties, but owing to its derivation is limited in its applicability. The second technique utilises a geometrical optics approximation for dealing with rays bound to a two dimensional surface and requires anisotropic material properties, though it can be used to cloak any smooth surface. We analytically derive the surface wave scattering behaviour for both cloak techniques when applied to a rotationally symmetric surface deformation. Furthermore, we simulate both using a commercially available full-wave electromagnetic solver and demonstrate a good level of agreement with their analytically derived solutions. Our analytical solutions and simulations provide a complete and concise overview of two different surface wave cloaking techniques. (paper)

  11. Isotropic and anisotropic surface wave cloaking techniques

    Science.gov (United States)

    McManus, T. M.; La Spada, L.; Hao, Y.

    2016-04-01

    In this paper we compare two different approaches for surface waves cloaking. The first technique is a unique application of Fermat’s principle and requires isotropic material properties, but owing to its derivation is limited in its applicability. The second technique utilises a geometrical optics approximation for dealing with rays bound to a two dimensional surface and requires anisotropic material properties, though it can be used to cloak any smooth surface. We analytically derive the surface wave scattering behaviour for both cloak techniques when applied to a rotationally symmetric surface deformation. Furthermore, we simulate both using a commercially available full-wave electromagnetic solver and demonstrate a good level of agreement with their analytically derived solutions. Our analytical solutions and simulations provide a complete and concise overview of two different surface wave cloaking techniques.

  12. Study of indoor radon levels in some radioactive areas of Himachal Pradesh: an inter-comparison of active and passive techniques

    International Nuclear Information System (INIS)

    Bajwa, B.S.; Singh, S.; Sharma, N.; Virk, H.S.

    2006-01-01

    Full text of publication follows: Indoor radon levels measurements were carried using both the active and passive techniques in the dwellings of some villages, known to be located in the vicinity of uranium mineralized zones of Hamirpur district, Himachal Pradesh. Even in the passive technique using Solid State Nuclear Track Detectors (S.S.N.T.D.), both the bare-slide and twin chamber dosemeter cup modes were utilized. An attempt has also been made to assess the levels of the indoor radon in these dwellings and inhalation dose rates of the population living in these villages. The average value of radon concentration levels using the bare-slide mode varies from 109.0 to 741.5 Bq/m3 in these dwellings, where as the maximum radon level using the twin cup dosemeter technique was found to be 140.3 Bq/m3. As usual the radon concentrations were found to be varying with seasonal changes, building materials etc. The radon survey in the dwellings of these villages has also been carried out using the Alpha- Guard technique, which is based on the pulse ionization chamber. The indoor radon concentration levels measured using the active technique of Alpha Guard have been found to be quite different from those measured in these dwellings by the passive technique of S.S.N.T.D.; indicating the importance of the S.S.N.T.D. in the long-term integrated measurement of the indoor radon levels in the dwellings. (authors)

  13. Study of indoor radon levels in some radioactive areas of Himachal Pradesh: an inter-comparison of active and passive techniques

    International Nuclear Information System (INIS)

    Bajwa, B.S.; Singh, S.; Sharma, N.; Virk, H.S.

    2006-01-01

    Full text of publication follows: Indoor radon levels measurements were carried using both the active and passive techniques in the dwellings of some villages, known to be located in the vicinity of uranium mineralized zones of Hamirpur district, Himachal Pradesh. Even in the passive technique using S.S.N.T.D., both the bare -slide and twin chamber dosemeter cup modes were utilized. An attempt has also been made to assess the levels of the indoor radon in these dwellings and inhalation dose rates of the population living in these villages. The average value of radon concentration levels using the bare-slide mode varies from 109.0 to 741.5 Bq/m3 in these dwellings, where as the maximum radon level using the twin cup dosemeter technique was found to be 140.3 Bq/m3. As usual the radon concentrations were found to be varying with seasonal changes, building materials etc. The radon survey in the dwellings of these villages has also been carried out using the Alpha-Guard technique, which is based on the pulse ionization chamber. The indoor radon concentration levels measured using the active technique of Alpha Guard have been found to be quite different from those measured in these dwellings by the passive technique of S.S.N.T.D.; indicating the importance of the S.S.N.T.D. in the long -term integrated measurement of the indoor radon levels in the dwellings. (authors)

  14. Deposition temperature dependence of material and Si surface passivation properties of O3-based atomic layer deposited Al2O3-based films and stacks

    International Nuclear Information System (INIS)

    Bordihn, Stefan; Mertens, Verena; Müller, Jörg W.; Kessels, W. M. M.

    2014-01-01

    The material composition and the Si surface passivation of aluminum oxide (Al 2 O 3 ) films prepared by atomic layer deposition using Al(CH 3 ) 3 and O 3 as precursors were investigated for deposition temperatures (T Dep ) between 200 °C and 500 °C. The growth per cycle decreased with increasing deposition temperature due to a lower Al deposition rate. In contrast the material composition was hardly affected except for the hydrogen concentration, which decreased from [H] = 3 at. % at 200 °C to [H]  2 O 3 /SiN x stacks complemented the work and revealed similar levels of surface passivation as single-layer Al 2 O 3 films, both for the chemical and field-effect passivation. The fixed charge density in the Al 2 O 3 /SiN x stacks, reflecting the field-effect passivation, was reduced by one order of magnitude from 3·10 12  cm −2 to 3·10 11  cm −2 when T Dep was increased from 300 °C to 500 °C. The level of the chemical passivation changed as well, but the total level of the surface passivation was hardly affected by the value of T Dep . When firing films prepared at of low T Dep , blistering of the films occurred and this strongly reduced the surface passivation. These results presented in this work demonstrate that a high level of surface passivation can be achieved for Al 2 O 3 -based films and stacks over a wide range of conditions when the combination of deposition temperature and annealing or firing temperature is carefully chosen

  15. Colossal positive magnetoresistance in surface-passivated oxygen-deficient strontium titanite

    KAUST Repository

    David, Adrian

    2015-05-15

    Modulation of resistance by an external magnetic field, i.e. magnetoresistance effect, has been a long-lived theme of research due to both fundamental science and device applications. Here we report colossal positive magnetoresistance (CPMR) (>30,000% at a temperature of 2 K and a magnetic field of 9 T) discovered in degenerate semiconducting strontium titanite (SrTiO3) single crystals capped with ultrathin SrTiO3/LaAlO3 bilayers. The low-pressure high-temperature homoepitaxial growth of several unit cells of SrTiO3 introduces oxygen vacancies and high-mobility carriers in the bulk SrTiO3, and the three-unit-cell LaAlO3 capping layer passivates the surface and improves carrier mobility by suppressing surface-defect-related scattering. The coexistence of multiple types of carriers and inhomogeneous transport lead to the emergence of CPMR. This unit-cell-level surface engineering approach is promising to be generalized to others oxides, and to realize devices with high-mobility carriers and interesting magnetoelectronic properties.

  16. Use of passive repeaters for tunnel surface communications

    International Nuclear Information System (INIS)

    Capista, D.; McDowell, D.

    1996-04-01

    Many times there is a need to establish ratio communication between the surface and a beam enclosure. When one solicits communication companies for solutions, the answer is often to purchase expensive communication equipment such as repeaters or radiax type cable which can cost in the tens of thousands of dollars. This TM will describe an inexpensive solution to this problem and the results that can be expected. The cost of a passive repeater is $100--$200 depending on how elaborate one wants to be. A passive repeater system consists of two antennas connected together with a transmission line. When using VHF or UHF transceivers, one can use 5/8 wave mobile antennas, such as the Larson NMO406-CK for the 400--420 MHz range, with the antenna connected to a 19 inch square piece of aluminum to act as a ground plane. This type of antenna has reasonably good gain, seems to be adequate, and is inexpensive. Another antenna choice is to cut a dipole out of bus wire and solder this wire to a female N connector. Using a dipole seems to work OK in the tunnel and avoids the problem of having a wire sticking down for people to poke their eye with. The cable connecting the antennas should be of good quality so that the signal lost in the cable is minimal. The authors chose Belden 9913 coax. This cable has a characteristic impedance of 50 ohms and has 2.7 dB/100 ft. of attenuation at 400 MHz

  17. Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

    Science.gov (United States)

    Rousseau, Ian; Callsen, Gordon; Jacopin, Gwénolé; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas

    2018-03-01

    III-nitride surface states are expected to impact high surface-to-volume ratio devices, such as nano- and micro-wire light-emitting diodes, transistors, and photonic integrated circuits. In this work, reversible photoinduced oxygen desorption from III-nitride microdisk resonator surfaces is shown to increase optical attenuation of whispering gallery modes by 100 cm-1 at λ = 450 nm. Comparison of photoinduced oxygen desorption in unintentionally and n+-doped microdisks suggests that the spectral changes originate from the unpinning of the surface Fermi level, likely taking place at etched nonpolar III-nitride sidewalls. An oxygen-rich surface prepared by thermal annealing results in a broadband Q improvement to state-of-the-art values exceeding 1 × 104 at 2.6 eV. Such findings emphasize the importance of optically active surface states and their passivation for future nanoscale III-nitride optoelectronic and photonic devices.

  18. Chemical and physical passivation of type II strained-layer superlattice devices by means of thiolated self-assembled monolayers and polymer encapsulates

    Science.gov (United States)

    Henry, Nathan C.; Knorr, Daniel B.; Williams, Kristen S.; Baril, Neil; Nallon, Eric; Lenhart, Joseph L.; Andzelm, Jan W.; Pellegrino, Joseph; Tidrow, Meimei; Cleveland, Erin; Bandara, Sumith

    2015-05-01

    The efficacy of solution deposition of thiolated self-assembled monolayers (SAMs) has been explored for the purpose of passivating III-V type II superlattice (T2SL) photodetectors, more specifically a p-type heterojunction device. Sulfur passivation has previously been achieved on T2SL devices. However, degradation over time, temperature sensitivity and inconsistent reproducibility necessitate a physical encapsulate that can chemically bond to the chemical passivant. Thus, this research investigates two passivation methods, surface passivation with a thiol monolayer and passivation with a polymer encapsulant with a view toward future combination of these techniques. Analysis of the physical and chemical condition of the surface prior to deposition assisted in the development of ideal processes for optimized film quality. Successful deposition was facilitated by in situ oxide removal. Various commercially available functional (cysteamine) and non-functional (alkane) thiolated monolayers were investigated. Dark current was reduced by 3 orders of magnitude and achieved negligible surface leakage at low bias levels. The lowest dark current result, 7.69 × 10-6 A/cm2 at 50 mV, was achieved through passivation with cysteamine.

  19. On the Active and Passive Flow Separation Control Techniques over Airfoils

    Science.gov (United States)

    Moghaddam, Tohid; Banazadeh Neishabouri, Nafiseh

    2017-10-01

    In the present work, recent advances in the field of the active and passive flow separation control, particularly blowing and suction flow control techniques, applied on the common airfoils are briefly reviewed. This broad research area has remained the point of interest for many years as it is applicable to various applications. The suction and blowing flow control methods, among other methods, are more technically feasible and market ready techniques. It is well established that the uniform and/or oscillatory blowing and suction flow control mechanisms significantly improve the lift-to-drag ratio, and further, postpone the boundary layer separation as well as the stall. The oscillatory blowing and suction flow control, however, is more efficient compared to the uniform one. A wide range of parameters is involved in controlling the behavior of a blowing and/or suction flow control, including the location, length, and angle of the jet slots. The oscillation range of the jet slot is another substantial parameter.

  20. Solar chimney integrated with passive evaporative cooler applied on glazing surfaces

    International Nuclear Information System (INIS)

    Al Touma, Albert; Ghali, Kamel; Ghaddar, Nesreen; Ismail, Nagham

    2016-01-01

    This study investigates the performance of a hybrid system applied on glazing surfaces for reducing the space cooling load and radiation asymmetry. The proposed system combines the principles of passive evaporative cooling with the natural buoyant flow in solar chimneys to entrain outdoor air and attenuate the window surface temperature. A predictive heat and mass transport model combining the evaporative cooler, glazing section, solar chimney and an office space is developed to study the system performance in harshly hot climates. The developed model was validated through experiments conducted in a twin climatic chamber for given ambient temperature, humidity, and solar radiation conditions. Good agreement was found between the measured and the predicted window temperatures and space loads at maximum discrepancy lower than 4.3%. The proposed system is applied to a typical office space to analyze its effectiveness in reducing the window temperature, the space load and radiation asymmetry, while maintaining the indoor comfort conditions. Results have shown that the system is reduced the space load by −19.8% and attenuated the radiation asymmetry significantly for office spaces having window-to-wall ratio of 40% in climate of Riyadh, KSA. The system performance diminished when applied in locations suffering from humid weather climates. - Highlights: • A passive evaporative-cooled solar chimney system is introduced to decrease window temperature. • A mathematical model is developed of the system to predict induce air flow and window surface temperature. • The model is validated with experiments in twin room climatic chamber and using artificial solar lamps. • The system reduces window maximum temperature by 5 °C in the hot dry climate of Riyadh, KSA. • It reduced the space load by 19.4% for office spaces at window-to-wall ratio of 40% in Riyadh, KSA.

  1. Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation

    International Nuclear Information System (INIS)

    Liao, B; Stangl, R; Ma, F; Mueller, T; Lin, F; Aberle, A G; Bhatia, C S; Hoex, B

    2013-01-01

    We demonstrate that by using a water (H 2 O)-based thermal atomic layer deposited (ALD) aluminum oxide (Al 2 O 3 ) film, excellent surface passivation can be attained on planar low-resistivity silicon wafers. Effective carrier lifetime values of up to 12 ms and surface recombination velocities as low as 0.33 cm s −1 are achieved on float-zone wafers after a post-deposition thermal activation of the Al 2 O 3 passivation layer. This post-deposition activation is achieved using an industrial high-temperature firing process which is commonly used for contact formation of standard screen-printed silicon solar cells. Neither a low-temperature post-deposition anneal nor a silicon nitride capping layer is required in this case. Deposition temperatures in the 100–400 °C range and peak firing temperatures of about 800 °C (set temperature) are investigated. Photoluminescence imaging shows that the surface passivation is laterally uniform. Corona charging and capacitance–voltage measurements reveal that the negative fixed charge density near the AlO x /c-Si interface increases from 1.4 × 10 12 to 3.3 × 10 12 cm −2 due to firing, while the midgap interface defect density reduces from 3.3 × 10 11 to 0.8 × 10 11 cm −2 eV −1 . This work demonstrates that direct firing activation of thermal ALD Al 2 O 3 is feasible, which could be beneficial for solar cell manufacturing. (paper)

  2. Photoluminescence model of sulfur passivated p-InP nanowires

    International Nuclear Information System (INIS)

    Tajik, N; Haapamaki, C M; LaPierre, R R

    2012-01-01

    The effect of ammonium polysulfide solution, (NH 4 ) 2 S x , on the surface passivation of p-doped InP nanowires (NWs) was investigated by micro-photoluminescence. An improvement in photoluminescence (PL) intensity from individual NWs upon passivation was used to optimize the passivation procedure using different solvents, sulfur concentrations and durations of passivation. The optimized passivation procedure gave an average of 24 times improvement in peak PL intensity. A numerical model is presented to explain the PL improvement upon passivation in terms of a reduction in surface trap density by two orders of magnitude from 10 12 to 10 10 cm −2 , corresponding to a change in surface recombination velocity from 10 6 to 10 4 cm s −1 . The diameter dependence of the PL intensity is investigated and explained by the model. The PL intensity from passivated nanowires decreased to its initial (pre-passivation) value over a period of seven days in ambient air, indicating that the S passivation was unstable. (paper)

  3. Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3

    NARCIS (Netherlands)

    Terlinden, N.M.; Dingemans, G.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2010-01-01

    Al2O3 synthesized by plasma-assisted atomic layer deposition yields excellent surface passivation of crystalline silicon (c-Si) for films down to ~ 5 nm in thickness. Optical second-harmonic generation was employed to distinguish between the influence of field-effect passivation and chemical

  4. Investigation on the dominant key to achieve superior Ge surface passivation by GeOx based on the ozone oxidation

    International Nuclear Information System (INIS)

    Wang, Xiaolei; Xiang, Jinjuan; Wang, Wenwu; Xiong, Yuhua; Zhang, Jing; Zhao, Chao

    2015-01-01

    Highlights: • The dominant key to achieve superior Ge passivation by GeO x is investigated. • The interface state density decreases with increasing the GeO x thickness. • The Ge 3+ oxide component is the dominant key to passivate the Ge surface. • The atomic structure at the GeO x /Ge interface is built by XPS. - Abstract: The dominant key to achieve superior Ge surface passivation by GeO x interfacial layer is investigated based on ozone oxidation. The interface state density (D it ) measured from low temperature conduction method is found to decrease with increasing the GeO x thickness (0.26–1.06 nm). The X-ray photoelectron spectroscopy (XPS) is employed to demonstrate the interfacial structure of GeO x /Ge with different GeO x thicknesses. And the XPS results show that Ge 3+ oxide component is responsible to the decrease of the D it due to the effective passivation of Ge dangling bonds. Therefore, the formation of Ge 3+ component is the dominant key to achieve low D it for Ge gate stacks. Our work confirms that the same physical mechanism determines the Ge surface passivation by the GeO x regardless of the oxidation methods to grow the GeO x interfacial layer. As a result, to explore a growth process that can realize sufficient Ge 3+ component in the GeO x interlayer as thin as possible is important to achieve both equivalent oxide thickness scaling and superior interfacial property simultaneously. This conclusion is helpful to engineer the optimization of the Ge gate stacks.

  5. Passivity-based design of robust passive damping for LCL-filtered voltage source converters

    DEFF Research Database (Denmark)

    Wang, Xiongfei; Blaabjerg, Frede; Loh, Poh Chiang

    2015-01-01

    Passive damping is proven as a robust stabilizing technique for LCL-filtered voltage source converters. However, conventional design methods of passive dampers are based on the passive components only, while the inherent damping effect of time delay in the digital control system is overlooked....... In this paper, a frequency-domain passivity-based design approach is proposed, where the passive dampers are designed to eliminate the negative real part of the converter output admittance with closed-loop current control, rather than shaping the LCL-filter itself. Thus, the influence of time delay...... in the current control is included, which allows a relaxed design of the passive damper with the reduced power loss and improved stability robustness against grid parameters variations. Design procedures of two commonly used passive dampers with LCL-filtered VSCs are illustrated. Experimental results validate...

  6. Band-structure tailoring and surface passivation for highly efficient near-infrared responsive PbS quantum dot photovoltaics

    Science.gov (United States)

    Zhou, Ru; Niu, Haihong; Ji, Fengwei; Wan, Lei; Mao, Xiaoli; Guo, Huier; Xu, Jinzhang; Cao, Guozhong

    2016-11-01

    PbS is a promising light harvester for near-infrared (NIR) responsive quantum dot (QD) photovoltaics due to its narrow bulk band gap (0.41 eV) and large exciton Bohr radius (18 nm). However, the relatively low conduction band (CB) and high-density surface defects of PbS as two major drawbacks for its use in solar cells severely hamper the photovoltaic performance enhancement. In this work, a modified solution-based successive ionic layer adsorption and reaction (SILAR) utilizing mixed cationic precursors of Pb2+ and Cd2+ is explored, and such a scheme offers two benefits, band-structure tailoring and surface passivation. In-situ deposited CdS suppresses the excessive growth of PbS in the mesopores, thereby facilitating the favorable electron injection from PbS to TiO2 in view of the up-shifted CB level of QDs; the intimate interpenetration of two sulfides with each other leads to superior passivation of trap state defects on PbS, which suppresses the interfacial charge recombination. With the construction of photovoltaics based on such a hybrid (Pb,Cd)S/CdS configuration, impressive power conversion efficiency up to 4.08% has been reached, outperforming that of the conventional PbS/CdS pattern (2.95%). This work highlights the great importance of band-structure tailoring and surface passivation for constructing highly efficient PbS QD photovoltaics.

  7. PEGylated graphene oxide elicits strong immunological responses despite surface passivation

    Science.gov (United States)

    Luo, Nana; Weber, Jeffrey K.; Wang, Shuang; Luan, Binquan; Yue, Hua; Xi, Xiaobo; Du, Jing; Yang, Zaixing; Wei, Wei; Zhou, Ruhong; Ma, Guanghui

    2017-02-01

    Engineered nanomaterials promise to transform medicine at the bio-nano interface. However, it is important to elucidate how synthetic nanomaterials interact with critical biological systems before such products can be safely utilized in humans. Past evidence suggests that polyethylene glycol-functionalized (PEGylated) nanomaterials are largely biocompatible and elicit less dramatic immune responses than their pristine counterparts. We here report results that contradict these findings. We find that PEGylated graphene oxide nanosheets (nGO-PEGs) stimulate potent cytokine responses in peritoneal macrophages, despite not being internalized. Atomistic molecular dynamics simulations support a mechanism by which nGO-PEGs preferentially adsorb onto and/or partially insert into cell membranes, thereby amplifying interactions with stimulatory surface receptors. Further experiments demonstrate that nGO-PEG indeed provokes cytokine secretion by enhancing integrin β8-related signalling pathways. The present results inform that surface passivation does not always prevent immunological reactions to 2D nanomaterials but also suggest applications for PEGylated nanomaterials wherein immune stimulation is desired.

  8. Passivation of the surfaces of single crystal gadolinium molybdate (Gd2(MoO4)3) against attack by hydrofluoric acid by inert ion beam irradiation

    International Nuclear Information System (INIS)

    Bhalla, A.; Cross, L.E.; Tongson, L.

    1978-01-01

    The passivation effect from inert ion beam bombardment has been studied on a ferroelectric surface. The mechanism in these materials may have some additional contributions because of the polarization charges of the domains and the dipole effect (ion beam and surface species) on the surfaces. For these studies Gd 2 (MoO 4 ) 3 (GMO) crystals were selected. Two possible mechanisms of passivation of GMO surfaces when bombarded with ion beams are discussed

  9. Influence of surface roughness on the corrosion behaviour of magnesium alloy

    International Nuclear Information System (INIS)

    Walter, R.; Kannan, M. Bobby

    2011-01-01

    Research highlights: → Surface roughness of AZ91 magnesium alloy plays a critical role in the passivation behaviour of the alloy. → The passivation behaviour of the alloy influences the pitting tendency. → Increase in surface roughness of AZ91 magnesium alloy increases the pitting tendency of the alloy. -- Abstract: In this study, the influence of surface roughness on the passivation and pitting corrosion behaviour of AZ91 magnesium alloy in chloride-containing environment was examined using electrochemical techniques. Potentiodynamic polarisation and electrochemical impedance spectroscopy tests suggested that the passivation behaviour of the alloy was affected by increasing the surface roughness. Consequently, the corrosion current and the pitting tendency of the alloy also increased with increase in the surface roughness. Scanning electron micrographs of 24 h immersion test samples clearly revealed pitting corrosion in the highest surface roughness (Sa 430) alloy, whereas in the lowest surface roughness (Sa 80) alloy no evidence of pitting corrosion was observed. Interestingly, when the passivity of the alloy was disturbed by galvanostatically holding the sample at anodic current for 1 h, the alloy underwent high pitting corrosion irrespective of their surface roughness. Thus the study suggests that the surface roughness plays a critical role in the passivation behaviour of the alloy and hence the pitting tendency.

  10. Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiNx films by introducing phosphorous catalytic-doped layer

    International Nuclear Information System (INIS)

    Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2014-01-01

    We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiN x ) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH 3 molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiN x /P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiN x passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRV is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiN x films. The outstanding results obtained imply that SiN x /P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.

  11. Qademah Fault Passive Data

    KAUST Repository

    Hanafy, Sherif M.

    2014-01-01

    OBJECTIVE: In this field trip we collect passive data to 1. Convert passive to surface waves 2. Locate Qademah fault using surface wave migration INTRODUCTION: In this field trip we collected passive data for several days. This data will be used to find the surface waves using interferometry and then compared to active-source seismic data collected at the same location. A total of 288 receivers are used. A 3D layout with 5 m inline intervals and 10 m cross line intervals is used, where we used 12 lines with 24 receivers at each line. You will need to download the file (rec_times.mat), it contains important information about 1. Field record no 2. Record day 3. Record month 4. Record hour 5. Record minute 6. Record second 7. Record length P.S. 1. All files are converted from original format (SEG-2) to matlab format P.S. 2. Overlaps between records (10 to 1.5 sec.) are already removed from these files

  12. Resistivity and Passivity Characterization of Ni-Base Glassy Alloys in NaOH Media

    Directory of Open Access Journals (Sweden)

    Khadijah M. Emran

    2018-01-01

    Full Text Available Resistivity and passivation behavior of two Ni-base bulk metallic glasses, with the nominal composition of Ni70Cr21Si0.5B0.5P8C ≤ 0.1Co ≤ 1Fe ≤ 1 (VZ1 and Ni72.65Cr7.3-Si6.7B2.15C ≤ 0.06Fe8.2Mo3 (VZ2, in various concentrations of NaOH solutions were studied. The investigations involved cyclic polarization (CP, electrochemical impedance spectroscopy (EIS, and electrochemical frequency modulation (EFM methods. Cyclic polarization measurements showed spontaneous passivation for both Ni-base glassy alloys at all alkaline concentrations, due to the presence of chromium as an alloying element that formed an oxide film on the alloy surface. The EIS analysis showed that the passive layers grown on the two Ni-base glassy alloy surfaces are formed by a double oxide layer structure. Scanning electron microscope (SEM examinations of the electrode surface showed Cr, Ni, Fe, and O rich corrosion products that reduced the extent of corrosion damage. Atomic force microscopy (AFM imaging technique was used to evaluate the topographic and morphologic features of surface layers formed on the surface of the alloys.

  13. Surface passivation of mixed-halide perovskite CsPb(BrxI1-x)3 nanocrystals by selective etching for improved stability.

    Science.gov (United States)

    Jing, Qiang; Zhang, Mian; Huang, Xiang; Ren, Xiaoming; Wang, Peng; Lu, Zhenda

    2017-06-08

    In recent years, there has been an unprecedented rise in the research of halide perovskites because of their important optoelectronic applications, including photovoltaic cells, light-emitting diodes, photodetectors and lasers. The most pressing question concerns the stability of these materials. Here faster degradation and PL quenching are observed at higher iodine content for mixed-halide perovskite CsPb(Br x I 1-x ) 3 nanocrystals, and a simple yet effective method is reported to significantly enhance their stability. After selective etching with acetone, surface iodine is partially etched away to form a bromine-rich surface passivation layer on mixed-halide perovskite nanocrystals. This passivation layer remarkably stabilizes the nanocrystals, making their PL intensity improved by almost three orders of magnitude. It is expected that a similar passivation layer can also be applied to various other kinds of perovskite materials with poor stability issues.

  14. PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    M. Hofmann

    2008-01-01

    Full Text Available A novel plasma-enhanced chemical vapour deposited (PECVD stack layer system consisting of a-SiOx:H, a-SiNx:H, and a-SiOx:H is presented for silicon solar cell rear side passivation. Surface recombination velocities below 60 cm/s (after firing and below 30 cm/s (after forming gas anneal were achieved. Solar cell precursors without front and rear metallisation showed implied open-circuit voltages Voc values extracted from quasi-steady-state photoconductance (QSSPC measurements above 680 mV. Fully finished solar cells with up to 20.0% energy conversion efficiency are presented. A fit of the cell's internal quantum efficiency using software tool PC1D and a comparison to a full-area aluminium-back surface field (Al-BSF and thermal SiO2 is shown. PECVD-ONO was found to be clearly superior to Al-BSF. A separation of recombination at the metallised and the passivated area at the solar cell's rear is presented using the equations of Fischer and Kray. Nuclear reaction analysis (NRA has been used to evaluate the hydrogen depth profile of the passivation layer system at different stages.

  15. Passive and low energy cooling techniques for the Czech Republic

    NARCIS (Netherlands)

    Lain, M.; Hensen, J.L.M.; Santamouris, M.

    2005-01-01

    This paper deals with the applicability of passive and low energy cooling technologies in the Czech Republic. The work includes climate analysis as well as buildings and systems analysis in order to estimate the potential of passive and low energy cooling technologies. The latter is based on case

  16. Elucidating the role of surface passivating ligand structural parameters in hole wave function delocalization in semiconductor cluster molecules.

    Science.gov (United States)

    Teunis, Meghan B; Nagaraju, Mulpuri; Dutta, Poulami; Pu, Jingzhi; Muhoberac, Barry B; Sardar, Rajesh; Agarwal, Mangilal

    2017-09-28

    This article describes the mechanisms underlying electronic interactions between surface passivating ligands and (CdSe) 34 semiconductor cluster molecules (SCMs) that facilitate band-gap engineering through the delocalization of hole wave functions without altering their inorganic core. We show here both experimentally and through density functional theory calculations that the expansion of the hole wave function beyond the SCM boundary into the ligand monolayer depends not only on the pre-binding energetic alignment of interfacial orbitals between the SCM and surface passivating ligands but is also strongly influenced by definable ligand structural parameters such as the extent of their π-conjugation [π-delocalization energy; pyrene (Py), anthracene (Anth), naphthalene (Naph), and phenyl (Ph)], binding mode [dithiocarbamate (DTC, -NH-CS 2 - ), carboxylate (-COO - ), and amine (-NH 2 )], and binding head group [-SH, -SeH, and -TeH]. We observe an unprecedentedly large ∼650 meV red-shift in the lowest energy optical absorption band of (CdSe) 34 SCMs upon passivating their surface with Py-DTC ligands and the trend is found to be Ph- wave function delocalization rather than carrier trapping and/or phonon-mediated relaxation. Taken together, knowledge of how ligands electronically interact with the SCM surface is crucial to semiconductor nanomaterial research in general because it allows the tuning of electronic properties of nanomaterials for better charge separation and enhanced charge transfer, which in turn will increase optoelectronic device and photocatalytic efficiencies.

  17. Passivation of high temperature superconductors

    Science.gov (United States)

    Vasquez, Richard P. (Inventor)

    1991-01-01

    The surface of high temperature superconductors such as YBa2Cu3O(7-x) are passivated by reacting the native Y, Ba and Cu metal ions with an anion such as sulfate or oxalate to form a surface film that is impervious to water and has a solubility in water of no more than 10(exp -3) M. The passivating treatment is preferably conducted by immersing the surface in dilute aqueous acid solution since more soluble species dissolve into the solution. The treatment does not degrade the superconducting properties of the bulk material.

  18. Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation

    International Nuclear Information System (INIS)

    Liu, Chang; Chor, Eng Fong; Tan, Leng Seow

    2007-01-01

    Improved DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) have been demonstrated using reactive-sputtered hafnium oxide (HfO 2 ) thin film as the surface passivation layer. Hall data indicate a significant increase in the product of sheet carrier concentration (n s ) and electron mobility (μ n ) in the HfO 2 -passivated HEMTs, compared to the unpassivated HEMTs. This improvement in electron carrier characteristics gives rise to a 22% higher I Dmax and an 18% higher g mmax in HEMTs with HfO 2 passivation relative to the unpassivated devices. On the other hand, I gleak of the HEMTs decreases by nearly one order of magnitude when HfO 2 passivation is applied. In addition, drain current is measured in the subthreshold regime. Compared to the unpassivated HEMTs, HfO 2 -passivated HEMTs exhibit a much smaller off-state I D , indicating better turn-off characteristics

  19. GaAs nanopillar-array solar cells employing in situ surface passivation

    Science.gov (United States)

    Mariani, Giacomo; Scofield, Adam C.; Hung, Chung-Hong; Huffaker, Diana L.

    2013-01-01

    Arrays of III–V direct-bandgap semiconductor nanopillars represent promising photovoltaic candidates due to their inherent high optical absorption coefficients and minimized reflection arising from light trapping, efficient charge collection in the radial direction and the ability to synthesize them on low-cost platforms. However, the increased surface area results in surface states that hamper the power conversion efficiency. Here, we report the first demonstration of GaAs nanopillar-array photovoltaics employing epitaxial passivation with air mass 1.5 global power conversion efficiencies of 6.63%. High-bandgap epitaxial InGaP shells are grown in situ and cap the radial p–n junctions to alleviate surface-state effects. Under light, the photovoltaic devices exhibit open-circuit voltages of 0.44 V, short-circuit current densities of 24.3 mA cm−2 and fill factors of 62% with high external quantum efficiencies >70% across the spectral regime of interest. A novel titanium/indium tin oxide annealed alloy is exploited as transparent ohmic anode. PMID:23422665

  20. Passive-solar construction handbook

    Energy Technology Data Exchange (ETDEWEB)

    Levy, E.; Evans, D.; Gardstein, C.

    1981-02-01

    Many of the basic elements of passive solar design are reviewed. Passive solar construction is covered according to system type, each system type discussion including a general discussion of the important design and construction issues which apply to the particular system and case studies illustrating designed and built examples of the system type. The three basic types of passive solar systems discussed are direct gain, thermal storage wall, and attached sunspace. Thermal performance and construction information is presented for typical materials used in passive solar collector components, storage components, and control components. Appended are an overview of analysis methods and a technique for estimating performance. (LEW)

  1. Surface passivation of HgCdTe by CdZnTe and its characteristics

    Science.gov (United States)

    Lee, T. S.; Choi, K. K.; Jeoung, Y. T.; Kim, H. K.; Kim, J. M.; Kim, Y. H.; Chang, J. M.; Song, W. S.; Kim, S. U.; Park, M. J.; Lee, S. D.

    1997-06-01

    In this paper, we report the results of capacitance-voltage measurements conducted on several metal-insulator semiconductor (MIS) capacitors in which HgCdTe surfaces are treated with various surface etching and oxidation processes. CdZnTe passivation layers were deposited on HgCdTe surfaces by thermal evaporation after the surfaces were etched with 0.5-2.0% bromine in methanol solution, or thin oxide layers (tox ˜ few ten Å) were grown on the surfaces, in order to investigate effects of the surface treatments on the electrical properties of the surfaces, as determined from capacitance-voltage (C-V) measurements at 80K and 1 MHz. A negative flat band voltage has been observed for MIS capacitors fabricated after etching of HgCdTe surfaces with bromine in methanol solutions, which is reported to make the surface Te-rich. It is inferred that residual Te on the surface is a positive charge, Te4+. C-V characteristics for MIS capacitors fabricated on oxide surfaces grown by air-exposure and electrolytic process have shown large hysteresis effects, from which it is inferred that imperfect and electrically active oxide compounds and HgTe particles near the surface become slow interface states.

  2. The structures of passivated layers on the single crystals of austenitic steels

    International Nuclear Information System (INIS)

    Glownia, J.; Banas, J.

    1995-01-01

    In this work, the conditions of passivation and structure of passive layers on the single crystals in Fe-Cr18-Ni9 alloys are presented. The data shown the differences in the rate of passivation and in stability of passive layers on the (001), (011) and (111) surfaces. The passive layers are composed with the mixture of Fe +2 and Cr +3 oxides and hydroxides. On the (001) surface, the depth of passive layer is greater than on the (111) surface. (author)

  3. Passive microwave remote sensing of soil moisture

    International Nuclear Information System (INIS)

    Jackson, T.J.; Schmugge, T.J.

    1986-01-01

    Microwave remote sensing provides a unique capability for direct observation of soil moisture. Remote measurements from space afford the possibility of obtaining frequent, global sampling of soil moisture over a large fraction of the Earth's land surface. Microwave measurements have the benefit of being largely unaffected by cloud cover and variable surface solar illumination, but accurate soil moisture estimates are limited to regions that have either bare soil or low to moderate amounts of vegetation cover. A particular advantage of passive microwave sensors is that in the absence of significant vegetation cover soil moisture is the dominant effect on the received signal. The spatial resolutions of passive microwave soil moisture sensors currently considered for space operation are in the range 10–20 km. The most useful frequency range for soil moisture sensing is 1–5 GHz. System design considerations include optimum choice of frequencies, polarizations, and scanning configurations, based on trade-offs between requirements for high vegetation penetration capability, freedom from electromagnetic interference, manageable antenna size and complexity, and the requirement that a sufficient number of information channels be available to correct for perturbing geophysical effects. This paper outlines the basic principles of the passive microwave technique for soil moisture sensing, and reviews briefly the status of current retrieval methods. Particularly promising are methods for optimally assimilating passive microwave data into hydrologic models. Further studies are needed to investigate the effects on microwave observations of within-footprint spatial heterogeneity of vegetation cover and subsurface soil characteristics, and to assess the limitations imposed by heterogeneity on the retrievability of large-scale soil moisture information from remote observations

  4. High-Performance Quantum Dot Thin-Film Transistors with Environmentally Benign Surface Functionalization and Robust Defect Passivation.

    Science.gov (United States)

    Jung, Su Min; Kang, Han Lim; Won, Jong Kook; Kim, JaeHyun; Hwang, ChaHwan; Ahn, KyungHan; Chung, In; Ju, Byeong-Kwon; Kim, Myung-Gil; Park, Sung Kyu

    2018-01-31

    The recent development of high-performance colloidal quantum dot (QD) thin-film transistors (TFTs) has been achieved with removal of surface ligand, defect passivation, and facile electronic doping. Here, we report on high-performance solution-processed CdSe QD-TFTs with an optimized surface functionalization and robust defect passivation via hydrazine-free metal chalcogenide (MCC) ligands. The underlying mechanism of the ligand effects on CdSe QDs has been studied with hydrazine-free ex situ reaction derived MCC ligands, such as Sn 2 S 6 4- , Sn 2 Se 6 4- , and In 2 Se 4 2- , to allow benign solution-process available. Furthermore, the defect passivation and remote n-type doping effects have been investigated by incorporating indium nanoparticles over the QD layer. Strong electronic coupling and solid defect passivation of QDs could be achieved by introducing electronically active MCC capping and thermal diffusion of the indium nanoparticles, respectively. It is also noteworthy that the diffused indium nanoparticles facilitate charge injection not only inter-QDs but also between source/drain electrodes and the QD semiconductors, significantly reducing contact resistance. With benign organic solvents, the Sn 2 S 6 4- , Sn 2 Se 6 4- , and In 2 Se 4 2- ligand based QD-TFTs exhibited field-effect mobilities exceeding 4.8, 12.0, and 44.2 cm 2 /(V s), respectively. The results reported here imply that the incorporation of MCC ligands and appropriate dopants provide a general route to high-performance, extremely stable solution-processed QD-based electronic devices with marginal toxicity, offering compatibility with standard complementary metal oxide semiconductor processing and large-scale on-chip device applications.

  5. Atomic and electronic structures of novel silicon surface structures

    Energy Technology Data Exchange (ETDEWEB)

    Terry, J.H. Jr.

    1997-03-01

    The modification of silicon surfaces is presently of great interest to the semiconductor device community. Three distinct areas are the subject of inquiry: first, modification of the silicon electronic structure; second, passivation of the silicon surface; and third, functionalization of the silicon surface. It is believed that surface modification of these types will lead to useful electronic devices by pairing these modified surfaces with traditional silicon device technology. Therefore, silicon wafers with modified electronic structure (light-emitting porous silicon), passivated surfaces (H-Si(111), Cl-Si(111), Alkyl-Si(111)), and functionalized surfaces (Alkyl-Si(111)) have been studied in order to determine the fundamental properties of surface geometry and electronic structure using synchrotron radiation-based techniques.

  6. Outstanding resistance and passivation behaviour of new Fe-Co metal-metal glassy alloys in alkaline media.

    Directory of Open Access Journals (Sweden)

    Khadijah M Emran

    Full Text Available The electrochemical behavior of the oxide layers on two metal-metal glassy alloys, Fe78Co9Cr10Mo2Al1 (VX9and Fe49Co49V2 (VX50 (at.%, were studied using electrochemical techniques including electrochemical frequency modulation (EFM, electrochemical impedance spectroscopy (EIS and cyclic polarization (CP measurements. The morphology and composition of the alloy surfaces were investigated using X-ray photoelectron spectroscopy (XPS, scanning electron microscopy (SEM and atomic force microscopy (AFM. The corrosion rate and surface roughness of both alloys increased as the concentration of NaOH in aqueous solution was raised. The presence of some protective elements in the composition of the alloys led to the formation of a spontaneous passive layer on the alloy surface. The higher resistance values of both alloys were associated with the magnitude of the dielectric properties of the passive films formed on their surfaces. Both alloys are classified as having outstanding resistance to corrosion, which results from the formation of a passive film that acts as an efficient barrier to corrosion in alkaline solution.

  7. Novel Metal-Sulfur-Based Air-Stable Passivation of GaAs with Very Low Surface State Densities

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, Carol I.H.; Baca, Albert G.; Chang, P.-C; Hafich, M.J.; Hammons, B.E.; Zavadil, Kevin R.

    1999-08-09

    A new air-stable electronic surface passivation for GaAs and other III-V compound semiconductors that employs sulfur and a suitable metal ion, e.g., Zn, and that is robust towards plasma dielectric deposition has been developed. Initial improvements in photoluminescence are twice that of S-only treatments and have been preserved for >11 months with SiO{sub x}N{sub y} dielectric encapsulation. Photoluminescence and X-ray photoelectron spectroscopies indicate that the passivation consists of two major components with one being stable for >2 years in air. This process improves heterojunction bipolar transistor current gain for both large and small area devices.

  8. Passive in vivo elastography from skeletal muscle noise

    International Nuclear Information System (INIS)

    Sabra, Karim G.; Conti, Stephane; Roux, Philippe; Kuperman, W. A.

    2007-01-01

    Measuring the in vivo elastic properties of muscles (e.g., stiffness) provides a means for diagnosing and monitoring muscular activity. The authors demonstrated a passive in vivo elastography technique without an active external radiation source. This technique instead uses cross correlations of contracting skeletal muscle noise recorded with skin-mounted sensors. Each passive sensor becomes a virtual in vivo shear wave source. The results point to a low-cost, noninvasive technique for monitoring biomechanical in vivo muscle properties. The efficacy of the passive elastography technique originates from the high density of cross paths between all sensor pairs, potentially achieving the same sensitivity obtained from active elastography methods

  9. Ambient plasma treatment of silicon wafers for surface passivation recovery

    Science.gov (United States)

    Ge, Jia; Prinz, Markus; Markert, Thomas; Aberle, Armin G.; Mueller, Thomas

    2017-08-01

    In this work, the effect of an ambient plasma treatment powered by compressed dry air on the passivation quality of silicon wafers coated with intrinsic amorphous silicon sub-oxide is investigated. While long-time storage deteriorates the effective lifetime of all samples, a short ambient plasma treatment improves their passivation qualities. By studying the influence of the plasma treatment parameters on the passivation layers, an optimized process condition was identified which even boosted the passivation quality beyond its original value obtained immediately after deposition. On the other hand, the absence of stringent requirement on gas precursors, vacuum condition and longtime processing makes the ambient plasma treatment an excellent candidate to replace conventional thermal annealing in industrial heterojunction solar cell production.

  10. Passiv-Sammler

    OpenAIRE

    Fritsche, U.

    1991-01-01

    The invention relates to a passive collector for air pollution for the determination of emission rates for dry and wet deposits on construction materials such as natural stone, whereby the collector has a surrogate surface of the stone under investigation, the surrogate surface being linked to a collecting vessel such that any dry or wet contamination occurring can be collected.

  11. Performance evaluation of a hybrid-passive landfill leachate treatment system using multivariate statistical techniques

    Energy Technology Data Exchange (ETDEWEB)

    Wallace, Jack, E-mail: jack.wallace@ce.queensu.ca [Department of Civil Engineering, Queen’s University, Ellis Hall, 58 University Avenue, Kingston, Ontario K7L 3N6 (Canada); Champagne, Pascale, E-mail: champagne@civil.queensu.ca [Department of Civil Engineering, Queen’s University, Ellis Hall, 58 University Avenue, Kingston, Ontario K7L 3N6 (Canada); Monnier, Anne-Charlotte, E-mail: anne-charlotte.monnier@insa-lyon.fr [National Institute for Applied Sciences – Lyon, 20 Avenue Albert Einstein, 69621 Villeurbanne Cedex (France)

    2015-01-15

    Highlights: • Performance of a hybrid passive landfill leachate treatment system was evaluated. • 33 Water chemistry parameters were sampled for 21 months and statistically analyzed. • Parameters were strongly linked and explained most (>40%) of the variation in data. • Alkalinity, ammonia, COD, heavy metals, and iron were criteria for performance. • Eight other parameters were key in modeling system dynamics and criteria. - Abstract: A pilot-scale hybrid-passive treatment system operated at the Merrick Landfill in North Bay, Ontario, Canada, treats municipal landfill leachate and provides for subsequent natural attenuation. Collected leachate is directed to a hybrid-passive treatment system, followed by controlled release to a natural attenuation zone before entering the nearby Little Sturgeon River. The study presents a comprehensive evaluation of the performance of the system using multivariate statistical techniques to determine the interactions between parameters, major pollutants in the leachate, and the biological and chemical processes occurring in the system. Five parameters (ammonia, alkalinity, chemical oxygen demand (COD), “heavy” metals of interest, with atomic weights above calcium, and iron) were set as criteria for the evaluation of system performance based on their toxicity to aquatic ecosystems and importance in treatment with respect to discharge regulations. System data for a full range of water quality parameters over a 21-month period were analyzed using principal components analysis (PCA), as well as principal components (PC) and partial least squares (PLS) regressions. PCA indicated a high degree of association for most parameters with the first PC, which explained a high percentage (>40%) of the variation in the data, suggesting strong statistical relationships among most of the parameters in the system. Regression analyses identified 8 parameters (set as independent variables) that were most frequently retained for modeling

  12. On the origin of the photocurrent of electrochemically passivated p-InP(100) photoelectrodes.

    Science.gov (United States)

    Goryachev, Andrey; Gao, Lu; van Veldhoven, René P J; Haverkort, Jos E M; Hofmann, Jan P; Hensen, Emiel J M

    2018-05-15

    III-V semiconductors such as InP are highly efficient light absorbers for photoelectrochemical (PEC) water splitting devices. Yet, their cathodic stability is limited due to photocorrosion and the measured photocurrents do not necessarily originate from H2 evolution only. We evaluated the PEC stability and activation of model p-InP(100) photocathodes upon photoelectrochemical passivation (i.e. repeated surface oxidation/reduction). The electrode was subjected to a sequence of linear potential scans with or without intermittent passivation steps (repeated passivation and continuous reduction, respectively). The evolution of H2 and PH3 gases was monitored by online electrochemical mass spectrometry (OLEMS) and the Faradaic efficiencies of these processes were determined. Repeated passivation led to an increase of the photocurrent in 0.5 M H2SO4, while continuous reduction did not affect the photocurrent of p-InP(100). Neither H2 nor PH3 formation increased to the same extent as the photocurrent during the repeated passivation treatment. Surface analysis of the spent electrodes revealed substantial roughening of the electrode surface by repeated passivation, while continuous reduction left the surface unaltered. On the other hand, photocathodic conditioning performed in 0.5 M HCl led to the expected correlation between photocurrent increase and H2 formation. Ultimately, the H2 evolution rates of the photoelectrodes in H2SO4 and HCl are comparable. The much higher photocurrent in H2SO4 is due to competing side-reactions. The results emphasize the need for a detailed evaluation of the Faradaic efficiencies of all the involved processes using a chemical-specific technique like OLEMS. Photo-OLEMS can be beneficial in the study of photoelectrochemical reactions enabling the instantaneous detection of small amounts of reaction by-products.

  13. Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

    International Nuclear Information System (INIS)

    Lee, Ching-Sung; Hung, Chun-Tse; Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Ho, Chiu-Sheng; Lai, Ying-Nan

    2012-01-01

    Al 0.22 Ga 0.78 As/In 0.24 Ga 0.76 As pseudomorphic high-electron-mobility transistors (pHEMTs) with metal-oxide-semiconductor (MOS)-gate structure or oxide passivation by using ozone water oxidation treatment have been comprehensively investigated. Annihilated surface states, enhanced gate insulating property and improved device gain have been achieved by the devised MOS-gate structure and oxide passivation. The present MOS-gated or oxide-passivated pHEMTs have demonstrated superior device performances, including superior breakdown, device gain, noise figure, high-frequency characteristics and power performance. Temperature-dependent device characteristics of the present designs at 300–450 K are also studied. (paper)

  14. Fermi surface mapping: Techniques and visualization

    International Nuclear Information System (INIS)

    Rotenberg, E.; Denlinger, J.D.; Kevan, S.D.

    1997-01-01

    Angle-resolved photoemission (ARP) of valence bands is a mature technique that has achieved spectacular success in band-mapping metals, semiconductors, and insulators. The purpose of the present study was the development of experimental and analytical techniques in ARP which take advantage of third generation light sources. Here the authors studied the relatively simple Cu surface in preparation for other metals. Copper and related metals themselves are of current interest, especially due to its role as an interlayer in spin valves and other magnetic heterostructures. A major goal of this study was the development of a systematic technique to quickly (i.e. in a few hours of synchrotron beamtime) measure the FS and separate it into bulk and surface FS's. Often, one needs to avoid bulk features altogether, which one can achieve by carefully mapping their locations in k-space. The authors will also show how they systematically map Fermi surfaces throughout large volumes of k-space, and, by processing the resulting volume data sets, provide intuitive pictures of FS's, both bulk and surface

  15. Optical and electrical characterization of n-GaAs surfaces passivated by N{sub 2}-H{sub 2} plasma

    Energy Technology Data Exchange (ETDEWEB)

    Augelli, V.; Ligonzo, T.; Minafra, A.; Schiavulli, L.; Capozzi, V. E-mail: capozzi@ba.infn.it; Perna, G.; Ambrico, M.; Losurdo, M

    2003-05-01

    The passivation of GaAs (1 0 0) surface has been performed by using remote N{sub 2}-H{sub 2} (3% in H{sub 2}) RF plasma nitridation. The samples, consisting of n-doped GaAs wafers, show photoluminescence enhancement when the nitridation time and exposure to the plasma are in a narrow temporal window, so that a very thin (about 10 A) GaN layer is deposited on the GaAs surface. Pure N{sub 2} nitridation does not provide an efficient passivation, because it results in GaN layers with As and AsN{sub x} segregation at the GaN/GaAs interface. Increase of Au-GaAs Schottky barrier with the insertion of GaN interlayer and improvement of current-voltage characteristic have been observed.

  16. A COMPARISON BETWEEN ACTIVE AND PASSIVE TECHNIQUES FOR UNDERWATER 3D APPLICATIONS

    Directory of Open Access Journals (Sweden)

    G. Bianco

    2012-09-01

    Full Text Available In the field of 3D scanning, there is an increasing need for more accurate technologies to acquire 3D models of close range objects. Underwater exploration, for example, is very hard to perform due to the hostile conditions and the bad visibility of the environment. Some application fields, like underwater archaeology, require to recover tridimensional data of objects that cannot be moved from their site or touched in order to avoid possible damages. Photogrammetry is widely used for underwater 3D acquisition, because it requires just one or two digital still or video cameras to acquire a sequence of images taken from different viewpoints. Stereo systems composed by a pair of cameras are often employed on underwater robots (i.e. ROVs, Remotely Operated Vehicles and used by scuba divers, in order to survey archaeological sites, reconstruct complex 3D structures in aquatic environment, estimate in situ the length of marine organisms, etc. The stereo 3D reconstruction is based on the triangulation of corresponding points on the two views. This requires to find in both images common points and to match them (correspondence problem, determining a plane that contains the 3D point on the object. Another 3D technique, frequently used in air acquisition, solves this point-matching problem by projecting structured lighting patterns to codify the acquired scene. The corresponding points are identified associating a binary code in both images. In this work we have tested and compared two whole-field 3D imaging techniques (active and passive based on stereo vision, in underwater environment. A 3D system has been designed, composed by a digital projector and two still cameras mounted in waterproof housing, so that it can perform the various acquisitions without changing the configuration of optical devices. The tests were conducted in a water tank in different turbidity conditions, on objects with different surface properties. In order to simulate a typical

  17. A New Moonquake Catalog from Apollo 17 Seismic Data II: Lunar Surface Gravimeter: Implications of Expanding the Passive Seismic Array

    Science.gov (United States)

    Phillips, D.; Dimech, J. L.; Weber, R. C.

    2017-12-01

    Apollo 17's Lunar Surface Gravimeter (LSG) was deployed on the Moon in 1972, and was originally intended to detect gravitational waves as a confirmation of Einstein's general theory of relativity. Due to a design problem, the instrument did not function as intended. However, remotely-issued reconfiguration commands permitted the instrument to act effectively as a passive seismometer. LSG recorded continuously until Sept. 1977, when all surface data recording was terminated. Because the instrument did not meet its primary science objective, little effort was made to archive the data. Most of it was eventually lost, with the exception of data spanning the period March 1976 until Sept. 1977, and a recent investigation demonstrated that LSG data do contain moonquake signals (Kawamura et al., 2015). The addition of useable seismic data at the Apollo 17 site has important implications for event location schemes, which improve with increasing data coverage. All previous seismic event location attempts were limited to the four stations deployed at the Apollo 12, 14, 15, and 16 sites. Apollo 17 extends the functional aperture of the seismic array significantly to the east, permitting more accurate moonquake locations and improved probing of the lunar interior. Using the standard location technique of linearized arrival time inversion through a known velocity model, Kawamura et al. (2015) used moonquake signals detected in the LSG data to refine location estimates for 49 deep moonquake clusters, and constrained new locations for five previously un-located clusters. Recent efforts of the Apollo Lunar Surface Experiments Package Data Recovery Focus Group have recovered some of the previously lost LSG data, spanning the time period April 2, 1975 to June 30, 1975. In this study, we expand Kawamura's analysis to the newly recovered data, which contain over 200 known seismic signals, including deep moonquakes, shallow moonquakes, and meteorite impacts. We have completed initial

  18. Passive synthetic aperture sonar techniques in combination with tow ship noise canceling: application to a triplet towed array

    NARCIS (Netherlands)

    Colin, M.E.G.D.; Groen, J.

    2002-01-01

    An important issue in research on passive ASW operations is improvement in signal-to-noise ratio (SNR) and bearing resolution for targets emitting low frequency signals. One of the techniques believed to improve these characteristics is Synthetic Aperture Sonar (SAS). The method is based on the

  19. The new IRSN passive dosemeter using the RPL technique

    International Nuclear Information System (INIS)

    Fraboulet, P.; Cale, E.; Itie, C.; Bottollier-Depois, Jean-Francois

    2008-01-01

    Full text: The Institute for Radiological Protection and Nuclear Safety (IRSN) is the French public organisation in charge of research and expertise into nuclear safety and radiation protection. IRSN provides also services in these areas like dosimetric survey for 150,000 workers liable to be exposed to ionising radiation. At present whole-body dosemeters provided by the IRSN laboratory for photons and beta-particles are based on photographic films. In order to anticipate likely supplying decrease and to improve the service, IRSN has decided to replace photographic films by dosemeters based on the radio-photoluminescence (RPL) technology, supplied by the Japanese Company Chiyoda Technol. RPL was chosen after a thorough comparison with other available passive techniques (thermoluminescent dosemeters: TLD, and optically stimulated luminescence: OSL). Constraints due to large-scale production of dosemeters (packaging, shipping, etc.) were taken into account as well. Irradiation tests for five different dosemeters, based on the 3 available techniques (TLD, OSL, RPL) were performed. The main results of these tests are presented (energy, dose and angular response, detection threshold, etc.) together with main technical characteristics of the new RPL dosemeter (range in energy and dose, homogeneity, reproducibility, re-reading, information about radiation type from reading, etc.). This dosemeter is expected to give significative improvements in the IRSN laboratory's provision of service thanks to better dosimetric performances and because it offers the possibility to get information to analyse over-exposure circumstances. (author)

  20. Simple and greener synthesis of highly photoluminescence Mn{sup 2+}-doped ZnS quantum dots and its surface passivation mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yongbo; Liang, Xuhua; Ma, Xuan; Hu, Yahong [School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China); Hu, Xiaoyun; Li, Xinghua [Department of Physics, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China); Fan, Jun, E-mail: fanjun@nwu.edu.cn [School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China)

    2014-10-15

    Graphical abstract: TEM and HRTEM (inset) images of the as-prepared Mn{sup 2+}-doped ZnS QDs and the passivation mechanism model of GSH-capped ZnS QDs (b). - Highlights: • Highly photoluminescent Mn{sup 2+}-doped ZnS quantum dots were synthesized by a simple synthetic method. • The effects of Mn{sup 2+} doping concentration, reaction time and temperature on PL intensity were investigated. • The mechanism of surface passivation was described. - Abstract: In this paper, we reported a simple synthetic method of highly photoluminescent (PL) and stable Mn{sup 2+}-doped ZnS quantum dots (QDs) with glutathione (GSH) as the capping molecule and focused on mechanism of the surface passivation of QDs. The Mn{sup 2+}-doped ZnS QDs that was synthesized in basic solution (pH 10) at 120 °C for 5 h exhibited blue trap-state emission around 418 nm and a strong orange-red emission at about 580 nm with an excitation wavelength of 330 nm. The optimum doping concentration is determined to be 1.5 at.%, and the present Mn{sup 2+}-doped ZnS QDs synthesized under the optimal reaction condition exhibited a quantum yield of 48%. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) indicated that the Mn{sup 2+}-doped ZnS QDs were 3–5 nm in size with a zinc blend structure. More importantly, the PL intensity and chemical stability can be improved using organic ligand modification strategies, it was found that GSH could passivate surface defects very efficiently by comparing and analyzing the results of the different organic ligands modification. The cadmium-free Mn{sup 2+}-doped ZnS QDs well-passivated with GSH as capping molecule acquired the advantages of strong PL and excellent chemical stability, which are important to QD applications.

  1. Recent progress in the development and understanding of silicon surface passivation by aluminum oxide for photovoltaics

    NARCIS (Netherlands)

    Dingemans, G.; Kessels, W.M.M.

    2010-01-01

    In the recent years, considerable progress has been made in the understanding of the unique silicon surface passivation properties of aluminum oxide (Al2O3) films including its underlying mechanisms. Containing a high fixed negative charge density located close to the Si interface, Al2O3 provides a

  2. Passivated emitters in silicon solar cells

    International Nuclear Information System (INIS)

    King, R.R.; Gruenbaum, P.E.; Sinton, R.A.; Swanson, R.M.

    1990-01-01

    In high-efficiency silicon solar cells with low metal contact coverage fractions and high bulk lifetimes, cell performance is often dominated by recombination in the oxide-passivated diffusions on the cell surface. Measurements of the emitter saturation current density, J o , of oxide-passivated, boron and phosphorus diffusions are presented, and from these measurements, the dependence of surface recombination velocity on dopant concentration was extracted. The lowest observed values of J o which are stable under UV light are given for both boron- and phosphorus-doped, oxide-passivated diffusions, for both textured and untextured surfaces. Contour plots which incorporate the above data have been applied to two types of backside-contact solar cells with large area (37.5 cm 2 ) and one-sun efficiencies up to 22.7%

  3. Frequency selective surface based passive wireless sensor for structural health monitoring

    International Nuclear Information System (INIS)

    Jang, Sang-Dong; Kang, Byung-Woo; Kim, Jaehwan

    2013-01-01

    Wireless sensor networks or ubiquitous sensor networks are a promising technology giving useful information to people. In particular, the chipless passive wireless sensor is one of the most important developments in wireless sensor technology because it is compact and does not need a battery or chip for the sensor operation. So it has many possibilities for use in various types of sensor system with economical efficiency and robustness in harsh environmental conditions. This sensor uses an electromagnetic resonance frequency or phase angle shift associated with a geometrical change of the sensor tag or an impedance change of the sensor. In this paper, a chipless passive wireless structural health monitoring (SHM) sensor is made using a frequency selective surface (FSS). The cross type FSS is introduced, and its SHM principle is explained. The electromagnetic characteristics of the FSS are simulated in terms of transmission and reflection coefficients using simulation software, and an experimental verification is conducted. The electromagnetic characteristic change of the FSS in the presence of mechanical strain or a structural crack is investigated by means of simulation and experiment. Since large-area structures can be covered by deploying FSS, it is possible to detect the location of any cracks. (paper)

  4. Advanced Passivation Technology and Loss Factor Minimization for High Efficiency Solar Cells.

    Science.gov (United States)

    Park, Cheolmin; Balaji, Nagarajan; Jung, Sungwook; Choi, Jaewoo; Ju, Minkyu; Lee, Seunghwan; Kim, Jungmo; Bong, Sungjae; Chung, Sungyoun; Lee, Youn-Jung; Yi, Junsin

    2015-10-01

    High-efficiency Si solar cells have attracted great attention from researchers, scientists, photovoltaic (PV) industry engineers for the past few decades. With thin wafers, surface passivation becomes necessary to increase the solar cells efficiency by overcoming several induced effects due to associated crystal defects and impurities of c-Si. This paper discusses suitable passivation schemes and optimization techniques to achieve high efficiency at low cost. SiNx film was optimized with higher transmittance and reduced recombination for using as an effective antireflection and passivation layer to attain higher solar cell efficiencies. The higher band gap increased the transmittance with reduced defect states that persisted at 1.68 and 1.80 eV in SiNx films. The thermal stability of SiN (Si-rich)/SiN (N-rich) stacks was also studied. Si-rich SiN with a refractive index of 2.7 was used as a passivation layer and N-rich SiN with a refractive index of 2.1 was used for thermal stability. An implied Voc of 720 mV with a stable lifetime of 1.5 ms was obtained for the stack layer after firing. Si-N and Si-H bonding concentration was analyzed by FTIR for the correlation of thermally stable passivation mechanism. The passivation property of spin coated Al2O3 films was also investigated. An effective surface recombination velocity of 55 cm/s with a high density of negative fixed charges (Qf) on the order of 9 x 10(11) cm(-2) was detected in Al2O3 films.

  5. Surface passivation by Al2O3 and a-SiNx: H films deposited on wet-chemically conditioned Si surfaces

    NARCIS (Netherlands)

    Bordihn, S.; Mertens, V.; Engelhart, P.; Kersten, K.; Mandoc, M.M.; Müller, J.W.; Kessels, W.M.M.

    2012-01-01

    The surface passivation of p- and n-type silicon by different chemically grown SiO2 films (prepared by HNO3, H2SO4/H2O2 and HCl/H2O2 treatments) was investigated after PECVD of a-SiNx:H and ALD of Al2O3 capping films. The wet chemically grown SiO2 films were compared to thermally grown SiO2 and the

  6. Metastability of a-SiO{sub x}:H thin films for c-Si surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Serenelli, L., E-mail: luca.serenelli@enea.it [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Martini, L. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Imbimbo, L. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Asquini, R. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Menchini, F.; Izzi, M.; Tucci, M. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy)

    2017-01-15

    Highlights: • a-SiO{sub x}:H film deposition by RF-PECVD is optimized from SiH{sub 4}, CO{sub 2} and H{sub 2} gas mixture. • Metastability of a-SiO{sub x}:H/c-Si passivation is investigated under thermal annealing and UV exposure. • A correlation between passivation metastability and Si−H bonds is found by FTIR spectra. • A metastability model is proposed. - Abstract: The adoption of a-SiO{sub x}:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiN{sub x} on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiO{sub x}:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Si−H and Si−O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm{sup 2}. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiO{sub x}:H/c-Si/a-SiO{sub x}:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiO{sub x} passivation properties, was furthermore considered. In

  7. Passive and transpassive behaviour of CoCrMo in simulated biological solutions

    International Nuclear Information System (INIS)

    Hodgson, A.W.E.; Kurz, S.; Virtanen, S.; Fervel, V.; Olsson, C.-O.A.; Mischler, S.

    2004-01-01

    In this work, the behaviour of a CoCrMo alloy under simulated body conditions was investigated. More specifically, the electrochemical properties of the alloy and the relevant mechanisms in the passive and transpassive states were studied in detail. Electrochemical techniques such as potentiodynamic and potentiostatic polarisation, cyclic voltammetry, rotating disc electrode and electrochemical impedance spectroscopy were employed. Further, ex situ X-ray photoelectron spectroscopy analysis of the passive films was carried out. A good correlation between the results obtained from all the experimental techniques was achieved. Overall, it was found that the passive film on CoCrMo changed in composition and thickness with both potential and time. The passive behaviour of the CrCrMo alloy is due to a formation an oxide film highly enriched with Cr (∼90% Cr oxides) on the alloy surface. The passive and transpassive behaviour of the alloy is hence dominated by the alloying element Cr. In the transpassive region, strong thickening of the oxide film takes place, combined with a change in the composition of the film, and strongly increased dissolution rate. In the transpassive region, all alloying elements dissolve according to the composition of the alloy. The metal ion release is also very strongly enhanced by cyclic variation of the potential between reducing and oxidizing conditions. In this case, during activation/repassivation cycles, cobalt dissolution is greater than expected from the composition of the alloy. Therefore, active dissolution behaviour is mainly dominated by the alloying element Co

  8. Development of a passive sampler for gaseous mercury

    Science.gov (United States)

    Gustin, M. S.; Lyman, S. N.; Kilner, P.; Prestbo, E.

    2011-10-01

    Here we describe work toward development of the components of a cost effective passive sampling system for gaseous Hg that could be broadly deployed by nontechnical staff. The passive sampling system included an external shield to reduce turbulence and exposure to precipitation and dust, a diffusive housing that directly protects the collection surface during deployment and handling, and a collection surface. A protocol for cleaning and deploying the sampler and an analytical method were developed. Our final design consisted of a polycarbonate external shield enclosing a custom diffusive housing made from expanded PTFE tubing. Two collection surfaces were investigated, gold sputter-coated quartz plates and silver wires. Research showed the former would require extensive quality control for use, while the latter had interferences with other atmosphere constituents. Although the gold surface exhibited the best performance over space and time, gradual passivation would limit reuse. For both surfaces lack of contamination during shipping, deployment and storage indicated that the handling protocols developed worked well with nontechnical staff. We suggest that the basis for this passive sampling system is sound, but further exploration and development of a reliable collection surface is needed.

  9. SnO2 anode surface passivation by atomic layer deposited HfO2 improves li-ion battery performance

    KAUST Repository

    Yesibolati, Nulati; Shahid, Muhammad; Chen, Wei; Hedhili, Mohamed N.; Reuter, Mark C.; Ross, Frances M.; Alshareef, Husam N.

    2014-01-01

    For the first time, it is demonstrated that nanoscale HfO2 surface passivation layers formed by atomic layer deposition (ALD) significantly improve the performance of Li ion batteries with SnO2-based anodes. Specifically, the measured battery

  10. A XPS Study of the Passivity of Stainless Steels Influenced by Sulfate-Reducing Bacteria.

    Science.gov (United States)

    Chen, Guocun

    The influence of sulfate-reducing bacteria (SRB) on the passivity of type 304 and 317L stainless steels (SS) was investigated by x-ray photoelectron spectroscopy (XPS), microbiological and electrochemical techniques. Samples were exposed to SRB, and then the resultant surfaces were analyzed by XPS, and the corrosion resistance by potentiodynamic polarization in deaerated 0.1 M HCl. To further understand their passivity, the SRB-exposed samples were analyzed by XPS after potentiostatic polarization at a passive potential in the hydrochloric solution. The characterization was performed under two surface conditions: unrinsed and rinsed by deaerated alcohol and deionized water. Comparisons were made with control samples immersed in uninoculated medium. SRB caused a severe loss of the passivity of 304 SS through sulfide formation and possible additional activation to form hexavalent chromium. The sulfides included FeS, FeS_2, Cr_2S _3, NiS and possibly Fe_ {rm 1-x}S. The interaction took place nonuniformly, resulting in undercutting of the passive film and preferential hydration of inner surface layers. The bacterial activation of the Cr^{6+ }^ecies was magnified by subsequent potentiostatic polarization. In contrast, 317L SS exhibited a limited passivity. The sulfides were formed mainly in the outer layers. Although Cr^{6+}^ecies were observed after the exposure, they were dissolved upon polarization. Since 317L SS has a higher Mo content, its higher passivity was ascribed to Mo existing as molybdate on the surface and Mo^{5+} species in the biofilm. Consequently, the interaction of SRB with Mo was studied. It was observed that molybdate could be retained on the surfaces of Mo coupons by corrosion products. In the presence of SRB, however, a considerable portion of the molybdate interacted with intermediate sulfur -containing proteins, forming Mo(V)-S complexes and reducing bacterial growth and sulfate reduction. The limited insolubility of the Mo(V)-S complexes in 0

  11. Electrochemical and in-situ Surface-Enhanced Raman Spectroscopic (SERS) study of passive films formed on low-carbon steel in highly alkaline environments

    Science.gov (United States)

    Mancio, Mauricio

    In reinforced concrete, a passive layer forms because of the alkaline conditions in the pores of the cement paste, where large concentrations of hydroxides create a solution with pH typically between 12 and 14. The corrosion resistance of the material depends on the characteristics and integrity of the passive film; however, currently very limited information is available about the passive films formed on carbon steel under such conditions. This work presents an electrochemical and in-situ Surface-Enhanced Raman Spectroscopic (SERS) study of passive films formed on low-carbon steel in highly alkaline environments. More specifically, the study focuses on the characterization of the films formed on ASTM A36 steel reinforcing bar exposed to aqueous solutions that aim to reproduce the chemistry of the environment typically found within the cement paste. Electrochemical techniques such as cyclic potentiodynamic polarization curves, galvanostatic cathodic polarization and linear polarization resistance were employed, in addition to in-situ Surface Enhanced Raman Spectroscopy (SERS). The experimental setup was built in a way that SERS experiments could be performed simultaneously with potentiodynamic polarization curves, enabling a detailed analysis of the formation and reduction of the surface films as a function of applied potential. Three solutions with different pH levels were used for the polarization and SERS experiments, namely 0.55M KOH + 0.16M NaOH ([OH-]=0.71), 0.08M KOH + 0.02M NaOH ([OH-]=0.10) and 0.008M KOH + 0.002M NaOH ([OH-]=0.01). Additional NaOH solutions in which the pH was varied from 13 to 9 and the ionic strength from 10 -5 to 10-1 were prepared for a pilot study using linear polarization resistance. Results show that the features observed in the cyclic potentiodynamic polarization curves correlated well with the potential arrests observed in the GCP plots as well as with the changes observed in the SERS spectra, providing valuable information about

  12. Research and development of photovoltaic power system. Research on surface passivation for high-efficiency silicon solar cells; Taiyoko hatsuden system no kenkyu kaihatsu. Hyomen passivation no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Saito, T [Tokyo Univ. of Agriculture and Technology, Tokyo (Japan). Faculty of Technology

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on surface passivation of high-efficiency silicon solar cells. In research on carrier recombination on SiO2/doped silicon interface, measurements were carried out on minority carrier life with respect to p-type silicon substrates with which phosphorus with high and low concentrations are diffused uniformly on the surface and non-uniformly on the back and then oxidized. The measurements were performed for the purpose of evaluating the carrier recombination at p-n junctions. Effective life time of oxidized test samples increased longer than that of prior to the oxidization as a result of effect of surface passivation contributing remarkably. In research on reduction in carrier recombination on SiO2/Si interface by using H radical annealing, experiments were conducted by using a method that uses more active H-atoms. As a result, it was revealed that the reduction effect is recognized at as low temperature as 200{degree}C, and photo-bias effect is also noticeable. Other research activities included analytic research on minority carrier recombination on micro crystalline silicon/crystalline silicon interface, and experimental research on evaluation of minority carrier life of poly-crystalline silicon wafers. 6 figs.

  13. Passive remediation strategies for petroleum contaminated sites

    International Nuclear Information System (INIS)

    Everett, L.G.; Cullen, S.J.; Eccles, L.A.

    1991-01-01

    The US EPA is becoming increasingly aware of costs and the limited success of existing remediation strategies. Research teams within the US EPA believe that if passive remediation can be successfully demonstrated, it is a candidate for best available technology. Passive remediation, however, must be demonstrated through the use of monitoring techniques, which demonstrate: contaminants are not moving in the dissolved, adsorbed or free product phase; and contamination is biodegrading in-place. This paper presents a concise monitoring and analysis strategy for passive remediation. Specifically, the paper presents the accuracy, precision and operating range of neutron moderation techniques as a low cost, real-time screening tool to measure the migration of the dissolved phase in soil moisture, the stabilized adsorbed phase and free product movement. In addition, the paper identifies the capillary pressure range through which the dissolved phase will move and identifies techniques for satisfying the risk analysis that movement is not taking place. The rationale for passive remediation taking place is confirmed through a discussion of gas ratios associated with bacterial assimilation of hydrocarbons. Gas ratios which are relatively constant above ground are highly inverted in the subsurface at contamination sites. The use of frequent screening of a vertical geologic profile using least cost techniques and the infrequent analysis of soil gas ratios provides the required data upon which the public will accept passive remediation as best available technology at a particular site. The paper points out that neutron moderation is a high candidate vadose zone monitoring device and identifies alternative techniques using resistivity and dielectric constants, which are in the developmental stage. The economic implications for passive remediation are enormous relative to the excavation and remediation strategies which are currently in use

  14. Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation.

    Science.gov (United States)

    Latzel, M; Büttner, P; Sarau, G; Höflich, K; Heilmann, M; Chen, W; Wen, X; Conibeer, G; Christiansen, S H

    2017-02-03

    Nanotextured surfaces provide an ideal platform for efficiently capturing and emitting light. However, the increased surface area in combination with surface defects induced by nanostructuring e.g. using reactive ion etching (RIE) negatively affects the device's active region and, thus, drastically decreases device performance. In this work, the influence of structural defects and surface states on the optical and electrical performance of InGaN/GaN nanorod (NR) light emitting diodes (LEDs) fabricated by top-down RIE of c-plane GaN with InGaN quantum wells was investigated. After proper surface treatment a significantly improved device performance could be shown. Therefore, wet chemical removal of damaged material in KOH solution followed by atomic layer deposition of only 10 [Formula: see text] alumina as wide bandgap oxide for passivation were successfully applied. Raman spectroscopy revealed that the initially compressively strained InGaN/GaN LED layer stack turned into a virtually completely relaxed GaN and partially relaxed InGaN combination after RIE etching of NRs. Time-correlated single photon counting provides evidence that both treatments-chemical etching and alumina deposition-reduce the number of pathways for non-radiative recombination. Steady-state photoluminescence revealed that the luminescent performance of the NR LEDs is increased by about 50% after KOH and 80% after additional alumina passivation. Finally, complete NR LED devices with a suspended graphene contact were fabricated, for which the effectiveness of the alumina passivation was successfully demonstrated by electroluminescence measurements.

  15. Passivation of CdZnTe surfaces by oxidation in low energy atomic oxygen

    International Nuclear Information System (INIS)

    Chen, H.; Chattopadhyay, K.; Chen, K.; Burger, A.; George, M.A.; Gregory, J.C.; Nag, P.K.; Weimer, J.J.; James, R.B.

    1999-01-01

    A method of surface passivation of Cd 1-x Zn x Te (CZT) x-ray and gamma ray detectors has been established by using microwave-assisted atomic oxygen bombardment. Detector performance is significantly enhanced due to the reduction of surface leakage current. CZT samples were exposed to an atomic oxygen environment at the University of Alabama in Huntsville close-quote s Thermal Atomic Oxygen Facility. This system generates neutral atomic oxygen species with kinetic energies of 0.1 - 0.2 eV. The surface chemical composition and its morphology modification due to atomic oxygen exposure were studied by x-ray photoelectron spectroscopy and atomic force microscopy and the results were correlated with current-voltage measurements and with room temperature spectral responses to 133 Ba and 241 Am radiation. A reduction of leakage current by about a factor of 2 is reported, together with significant improvement in the gamma-ray line resolution. copyright 1999 American Vacuum Society

  16. Modelling the passive microwave signature from land surfaces: a review of recent results and application to the SMOS & SMAP soil moisture retrieval algorithms

    Science.gov (United States)

    Two passive microwave missions are currently operating at L-band to monitor surface soil moisture (SM) over continental surfaces. The SMOS sensor, based on an innovative interferometric technology enabling multi-angular signatures of surfaces to be measured, was launched in November 2009....

  17. Passivation of the surfaces of single crystal gadolinium molybdate (Gd/sub 2/(MoO/sub 4/)/sub 3/) against attack by hydrofluoric acid by inert ion beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Bhalla, A; Cross, L E; Tongson, L [Pennsylvania State Univ., University Park (USA). Materials Research Lab.

    1978-01-01

    The passivation effect from inert ion beam bombardment has been studied on a ferroelectric surface. The mechanism in these materials may have some additional contributions because of the polarization charges of the domains and the dipole effect (ion beam and surface species) on the surfaces. For these studies Gd/sub 2/(MoO/sub 4/)/sub 3/ (GMO) crystals were selected. Two possible mechanisms of passivation of GMO surfaces when bombarded with ion beams are discussed.

  18. Surface improvement for inside surface of small diameter pipes by laser cladding technique

    International Nuclear Information System (INIS)

    Irisawa, Toshio; Morishige, Norio; Umemoto, Tadahiro; Ono, Kazumichi; Hamaoka, Tadashi; Tanaka, Atsushi

    1991-01-01

    A laser cladding technique has been used for surface improvement in controlling the composition of a metal surface. Recent high power YAG laser development gives an opportunity to use this laser cladding technique for various applications. A YAG laser beam can be transmitted through an optical fiber for a long distance and through narrow spaces. YAG laser cladding was studied for developing alloy steel to prevent stress corrosion cracking in austenitic stainless steel piping. In order to make a cladding layer, mixed metal powder was on the inside surface of the piping using an organic binder. Subsequently the powder beds were melted with a YAG laser beam transmitted through an optical fiber. This paper introduces the Laser cladding technique for surface improvement for the inside surface of a small diameter pipe. (author)

  19. Distinct kinetics and mechanisms of mZVI particles aging in saline and fresh groundwater: H2 evolution and surface passivation.

    Science.gov (United States)

    Xin, Jia; Tang, Fenglin; Zheng, Xilai; Shao, Haibing; Kolditz, Olaf; Lu, Xin

    2016-09-01

    Application of microscale zero-valent iron (mZVI) is a promising technology for in-situ contaminated groundwater remediation; however, its longevity is negatively impacted by surface passivation, especially in saline groundwater. In this study, the aging behavior of mZVI particles was investigated in three media (milli-Q water, fresh groundwater and saline groundwater) using batch experiments to evaluate their potential corrosion and passivation performance under different field conditions. The results indicated that mZVI was reactive for 0-7 days of exposure to water and then gradually lost H2-generating capacity over the next hundred days in all of the tested media. In comparison, mZVI in saline groundwater exhibited the fastest corrosion rate during the early phase (0-7 d), followed by the sharpest kinetic constant decline in the latter phases. The SEM-EDS and XPS analyses demonstrated that in the saline groundwater, a thin and compact oxide film was immediately formed on the surface and significantly shielded the iron reactive site. Nevertheless, in fresh groundwater and milli-Q water, a passive layer composed of loosely and unevenly distributed precipitates slowly formed, with abundant reactive sites available to support continuous iron corrosion. These findings provide insight into the molecular-scale mechanism that governs mZVI passivation and provide implications for long-term mZVI application in saline contaminated groundwater. Copyright © 2016 Elsevier Ltd. All rights reserved.

  20. Surface passivation of GaInAsSb photodiodes with thioacetamide

    Energy Technology Data Exchange (ETDEWEB)

    Salesse, A.; Joullie, A.; Chevrier, F.; Cuminal, Y.; Ferblantier, G.; Christol, P. [Institut d' Electronique du Sud (IES-CEM2), UMR CNRS 5507, Case 067, Universite Montpellier 2, 34 095 Montpellier Cedex 05 (France); Calas, P. [UMR CNRS 5073 CHIMIE, Case 017, Universite Montpellier 2, 34 095 Montpellier Cedex 05 (France); Nieto, J. [Instituto de Investigacion en Comunicacion Optica (IICO), Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico)

    2007-04-15

    AlGaAsSb/GaInAsSb heterojunction mesa photodiodes having 2.2 {mu}m cutoff wavelength, grown by MBE on (p) GaSb substrates, have been passivated using thioacetamide CH{sub 4}CSNH{sub 2} and ammonium sulphide (NH{sub 4}){sub 2}S. Superior characteristics were obtained from devices processed with thioacetamide in acid medium (pH=2.4). At room temperature the surface leakage currents were suppressed, and the photodiodes showed R{sub 0}A product as high as 16 {omega}cm{sup 2} and detectivity D{sup *}(2 {mu}m,0 V){proportional_to}10{sup 10} cmHz{sup 1/2}W{sup -1}. A model explaining sulfuration mechanisms with thioacetamide and (NH{sub 4}){sub 2}S is proposed. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Detection of Moving Targets Based on Doppler Spectrum Analysis Technique for Passive Coherent Radar

    Directory of Open Access Journals (Sweden)

    Zhao Yao-dong

    2013-06-01

    Full Text Available A novel method of moving targets detection taking Doppler spectrum analysis technique for Passive Coherent Radar (PCR is provided. After dividing the receiving signals into segments as pulse series, it utilizes the technique of pulse compress and Doppler processing to detect and locate the targets. Based on the algorithm for Pulse-Doppler (PD radar, the equipollence between continuous and pulsed wave in match filtering is proved and details of this method are introduced. To compare it with the traditional method of Cross-Ambiguity Function (CAF calculation, the relationship and mathematical modes of them are analyzed, with some suggestions on parameters choosing. With little influence to the gain of targets, the method can greatly promote the processing efficiency. The validity of the proposed method is demonstrated by offline processing real collected data sets and simulation results.

  2. Neural tension technique is no different from random passive movements in reducing spasticity in patients with traumatic brain injury

    DEFF Research Database (Denmark)

    Lorentzen, Jakob; Nielsen, Dorthe; Holm, Karl

    2012-01-01

    Purpose: Neural tension technique (NTT) is a therapy believed to reduce spasticity and to increase range of motion (ROM). This study compared the ability of NTT and random passive movements (RPMs) to reduce spasticity in the knee flexors in 10 spastic patients with brain injury. Methods: An RCT...

  3. Surface Passivation for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Deligiannis, D.

    2017-01-01

    Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

  4. Passive Mixing inside Microdroplets

    Directory of Open Access Journals (Sweden)

    Chengmin Chen

    2018-04-01

    Full Text Available Droplet-based micromixers are essential units in many microfluidic devices for widespread applications, such as diagnostics and synthesis. The mixers can be either passive or active. When compared to active methods, the passive mixer is widely used because it does not require extra energy input apart from the pump drive. In recent years, several passive droplet-based mixers were developed, where mixing was characterized by both experiments and simulation. A unified physical understanding of both experimental processes and simulation models is beneficial for effectively developing new and efficient mixing techniques. This review covers the state-of-the-art passive droplet-based micromixers in microfluidics, which mainly focuses on three aspects: (1 Mixing parameters and analysis method; (2 Typical mixing element designs and the mixing characters in experiments; and, (3 Comprehensive introduction of numerical models used in microfluidic flow and diffusion.

  5. On the Control of the Fixed Charge Densities in Al2O3-Based Silicon Surface Passivation Schemes.

    Science.gov (United States)

    Simon, Daniel K; Jordan, Paul M; Mikolajick, Thomas; Dirnstorfer, Ingo

    2015-12-30

    A controlled field-effect passivation by a well-defined density of fixed charges is crucial for modern solar cell surface passivation schemes. Al2O3 nanolayers grown by atomic layer deposition contain negative fixed charges. Electrical measurements on slant-etched layers reveal that these charges are located within a 1 nm distance to the interface with the Si substrate. When inserting additional interface layers, the fixed charge density can be continuously adjusted from 3.5 × 10(12) cm(-2) (negative polarity) to 0.0 and up to 4.0 × 10(12) cm(-2) (positive polarity). A HfO2 interface layer of one or more monolayers reduces the negative fixed charges in Al2O3 to zero. The role of HfO2 is described as an inert spacer controlling the distance between Al2O3 and the Si substrate. It is suggested that this spacer alters the nonstoichiometric initial Al2O3 growth regime, which is responsible for the charge formation. On the basis of this charge-free HfO2/Al2O3 stack, negative or positive fixed charges can be formed by introducing additional thin Al2O3 or SiO2 layers between the Si substrate and this HfO2/Al2O3 capping layer. All stacks provide very good passivation of the silicon surface. The measured effective carrier lifetimes are between 1 and 30 ms. This charge control in Al2O3 nanolayers allows the construction of zero-fixed-charge passivation layers as well as layers with tailored fixed charge densities for future solar cell concepts and other field-effect based devices.

  6. Correlating the silicon surface passivation to the nanostructure of low-temperature a-Si:H after rapid thermal annealing

    NARCIS (Netherlands)

    Macco, B.; Melskens, J.; Podraza, N.J.; Arts, K.; Pugh, C.; Thomas, O.; Kessels, W.M.M.

    2017-01-01

    Using an inductively coupled plasma, hydrogenated amorphous silicon (a-Si:H) films have been prepared at very low temperatures (<50 °C) to provide crystalline silicon (c-Si) surface passivation. Despite the limited nanostructural quality of the a-Si:H bulk, a surprisingly high minority carrier

  7. Energy Conservation and Passive Solar Techniques in Campus Renovation.

    Science.gov (United States)

    Probasco, Jack; And Others

    1981-01-01

    The analysis of a building from an energy conservation and passive solar potential has three aspects: building envelope, landscaping, and room utilization. Typical conservation and solar control modifications are listed. (Author/MLF)

  8. Amine treatment induced perovskite nanowire network in perovskite solar cells: efficient surface passivation and carrier transport

    Science.gov (United States)

    Xiao, Ke; Cui, Can; Wang, Peng; Lin, Ping; Qiang, Yaping; Xu, Lingbo; Xie, Jiangsheng; Yang, Zhengrui; Zhu, Xiaodong; Yu, Xuegong; Yang, Deren

    2018-02-01

    In the fabrication of high efficiency organic-inorganic metal halide perovskite solar cells (PSCs), an additional interface modifier is usually applied for enhancing the interface passivation and carrier transport. In this paper, we develop an innovative method with in-situ growth of one-dimensional perovskite nanowire (1D PNW) network triggered by Lewis amine over the perovskite films. To our knowledge, this is the first time to fabricate PSCs with shape-controlled perovskite surface morphology, which improved power conversion efficiency (PCE) from 14.32% to 16.66% with negligible hysteresis. The amine molecule can passivate the trap states on the polycrystalline perovskite surface to reduce trap-state density. Meanwhile, as a fast channel, the 1D PNWs would promote carrier transport from the bulk perovskite film to the electron transport layer. The PSCs with 1D PNW modification not only exhibit excellent photovoltaic performances, but also show good stability with only 4% PCE loss within 30 days in the ambient air without encapsulation. Our results strongly suggest that in-situ grown 1D PNW network provides a feasible and effective strategy for nanostructured optoelectronic devices such as PSCs to achieve superior performances.

  9. Life Cycle Greenhouse Gas Emissions and Energy Analysis of Passive House with Variable Construction Materials

    Science.gov (United States)

    Baďurová, Silvia; Ponechal, Radoslav; Ďurica, Pavol

    2013-11-01

    The term "passive house" refers to rigorous and voluntary standards for energy efficiency in a building, reducing its ecological footprint. There are many ways how to build a passive house successfully. These designs as well as construction techniques vary from ordinary timber constructions using packs of straw or constructions of clay. This paper aims to quantify environmental quality of external walls in a passive house, which are made of a timber frame, lightweight concrete blocks and sand-lime bricks in order to determine whether this constructional form provides improved environmental performance. Furthermore, this paper assesses potential benefit of energy savings at heating of houses in which their external walls are made of these three material alternatives. A two storey residential passive house, with floorage of 170.6 m2, was evaluated. Some measurements of air and surface temperatures were done as a calibration etalon for a method of simulation.

  10. Surface enhanced Raman scattering as an in-reactor monitor of phenomena of interest to the Nuclear Power Industry

    International Nuclear Information System (INIS)

    Devine, T.M.

    1994-01-01

    Surface enhanced Raman spectroscopy (SERS) is proposed as a technique for monitoring in situ the passive films and corrosion products that form on the surfaces of alloys of interest in nuclear power plants. The technique is a highly sensitive procedure for detecting even very small quantities of species present on surfaces, in particular the surface of metallic alloys. The data could, for example, identify the constituents in passive films that are less than a monolayer in average thickness. Processes such as 60 Co pick-up could be monitored in real time. In fact, if it is known that incorporation of 60 Co occurs when a particular oxide film forms on the surface of the alloy, then measurement of the SER spectra could indicate when such films are beginning to form and thereby provide an early indication that conditions inside the reactor are now suitable for 60 Co pick-up in the passive films

  11. Use of passive microwave remote sensing to monitor soil moisture

    International Nuclear Information System (INIS)

    Wigneron, J.P.; Schmugge, T.; Chanzy, A.; Calvet, J.C.; Kerr, Y.

    1998-01-01

    Surface soil moisture is a key variable to describe the water and energy exchanges at the land surface/atmosphere interface. However, soil moisture is highly variable both spatially and temporally. Passive microwave remotely sensed data have great potential for providing estimates of soil moisture with good temporal repetition (on a daily basis) and at regional scale (∼ 10 km). This paper reviews the various methods for remote sensing of soil moisture from microwave radiometric systems. Potential applications from both airborne and spatial observations are discussed in the fields of agronomy, hydrology and meteorology. Emphasis in this paper is given to relatively new aspects of microwave techniques and of temporal soil moisture information analysis. In particular, the aperture synthesis technique allows us now to a address the soil moisture information needs on a global basis, from space instruments. (author) [fr

  12. Influence of a-Si:H deposition power on surface passivation property and thermal stability of a-Si:H/SiNx:H stacks

    Directory of Open Access Journals (Sweden)

    Hua Li

    2012-06-01

    Full Text Available The effectiveness of hydrogenated amorphous silicon (a-Si:H layers for passivating crystalline silicon surfaces has been well documented in the literature for well over a decade. One limitation of such layers however has arisen from their inability to withstand temperatures much above their deposition temperature without significant degradation. This limitation is of importance particularly with multicrystalline silicon materials where temperatures of at least 400°C are needed for effective hydrogenation of the crystallographic defects such as grain boundaries. To address this limitation, in this work the surface passivation quality and thermal stability of a stack passivating system, combining a layer of intrinsic a-Si:H and a capping layer of silicon nitride (SiNx:H, on p-type crystalline silicon wafers is studied and optimized. In particular the sensitivity of different microwave (MW power levels for underlying a-Si:H layer deposition are examined. Both effective minority carrier lifetime (ζeff measurement and Fourier transform infrared (FTIR spectrometry were employed to study the bonding configurations, passivating quality and thermal stability of the a-Si:H/SiNx:H stacks. It is established that the higher MW power could result in increased as-deposited ζeff and implied Voc (iVoc values, indicating likely improved surface passivation quality, but that this combination degrades more quickly when exposed to prolonged thermal treatments. The more dihydride-rich film composition corresponding to the higher MW power appears to be beneficial for bond restructuring by hydrogen interchanges when exposed to short term annealing, however it also appears more susceptible to providing channels for hydrogen out-effusion which is the likely cause of the poorer thermal stability for prolonged high temperature exposure compared with stacks with underlying a-Si:H deposited with lower MW power.

  13. Al-Si alloy point contact formation and rear surface passivation for silicon solar cells using double layer porous silicon

    International Nuclear Information System (INIS)

    Moumni, Besma; Ben Jaballah, Abdelkader; Bessais, Brahim

    2012-01-01

    Lowering the rear surface recombination velocities by a dielectric layer has fascinating advantages compared with the standard fully covered Al back-contact silicon solar cells. In this work the passivation effect by double layer porous silicon (PS) (wide band gap) and the formation of Al-Si alloy in narrow p-type Si point contact areas for rear passivated solar cells are analysed. As revealed by Fourier transform infrared spectroscopy, we found that a thin passivating aluminum oxide (Al 2 O 3 ) layer is formed. Scanning electron microscopy analysis performed in cross sections shows that with bilayer PS, liquid Al penetrates into the openings, alloying with the Si substrate at depth and decreasing the contact resistivity. At the solar cell level, the reduction in the contact area and resistivity leads to a minimization of the fill factor losses.

  14. Sea Surface Salinity and Wind Retrieval Algorithm Using Combined Passive-Active L-Band Microwave Data

    Science.gov (United States)

    Yueh, Simon H.; Chaubell, Mario J.

    2011-01-01

    Aquarius is a combined passive/active L-band microwave instrument developed to map the salinity field at the surface of the ocean from space. The data will support studies of the coupling between ocean circulation, the global water cycle, and climate. The primary science objective of this mission is to monitor the seasonal and interannual variation of the large scale features of the surface salinity field in the open ocean with a spatial resolution of 150 kilometers and a retrieval accuracy of 0.2 practical salinity units globally on a monthly basis. The measurement principle is based on the response of the L-band (1.413 gigahertz) sea surface brightness temperatures (T (sub B)) to sea surface salinity. To achieve the required 0.2 practical salinity units accuracy, the impact of sea surface roughness (e.g. wind-generated ripples and waves) along with several factors on the observed brightness temperature has to be corrected to better than a few tenths of a degree Kelvin. To the end, Aquarius includes a scatterometer to help correct for this surface roughness effect.

  15. Comparison between Al2O3 surface passivation films deposited with thermal ALD, plasma ALD and PECVD

    NARCIS (Netherlands)

    Dingemans, G.; Engelhart, P.; Seguin, R.; Mandoc, M.M.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2010-01-01

    Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cells. The key distinguishing factor of Al2O3 is the high fixed negative charge density (Qf = 1012-1013 cm-2), which is especially beneficial for p- and p+ type c-Si, as it leads to a high level of

  16. Atomic Layer Deposition of Al2O3 on H-Passivated GeSi: Initial Surface Reaction Pathways with H/GeSi(100)-2 × 1

    International Nuclear Information System (INIS)

    Yu, Shi; Qing-Qing, Sun; Lin, Dong; Han, Liu; Shi-Jin, Ding; Wei, Zhang

    2009-01-01

    The reaction mechanisms of Al(CH 3 ) 3 (TMA) adsorption on H-passivated GeSi(100)-2 × 1 surface are investigated with density functional theory. The Si–Ge and Ge–Ge one-dimer cluster models are employed to represent the GeSi(100)-2 × 1 surface with different Ge compositions. For a Si-Ge dimer of a H-passivated SiGe surface, TMA adsorption on both Si–H * and Ge–H * sites is considered. The activation barrier of TMA with the Si–H * site (1.2eV) is higher than that of TMA with the Ge-H * site (0.91 eV), which indicates that the reaction proceeds more slowly on the Si-H * site than on the Ge-H * site. In addition, adsorption of TMA is more energetically favorable on the Ge–Ge dimer than on the Si–Ge dimer of H-passivated SiGe. (atomic and molecular physics)

  17. Surface passivation function of indium-tin-oxide-based nanorod structural sensors

    International Nuclear Information System (INIS)

    Lin, Tzu-Shun; Lee, Ching-Ting; Lee, Hisn-Ying; Lin, Chih-Chien

    2012-01-01

    Employing self-shadowing traits of an oblique-angle electron-beam deposition system, various indium tin oxide (ITO) nanorod arrays were deposited on a silicon substrate and used as extended-gate field-effect-transistor (EGFET) pH sensors. The length and morphology of the deposited ITO nanorod arrays could be changed and controlled under different deposition conditions. The ITO nanorod structural EGFET pH sensors exhibited high sensing performances owing to the larger sensing surface area. The sensitivity of the pH sensors with 150-nm-length ITO nanorod arrays was 53.96 mV/pH. By using the photoelectrochemical treatment of the ITO nanorod arrays, the sensitivity of the pH sensors with 150-nm-length passivated ITO nanorod arrays was improved to 57.21 mV/pH.

  18. Hybrid passivated colloidal quantum dot solids

    KAUST Repository

    Ip, Alex

    2012-07-29

    Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electrong-"hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device. © 2012 Macmillan Publishers Limited. All rights reserved.

  19. Hybrid passivated colloidal quantum dot solids

    KAUST Repository

    Ip, Alex; Thon, Susanna; Hoogland, Sjoerd H.; Voznyy, Oleksandr; Zhitomirsky, David; Debnath, Ratan K.; Levina, Larissa; Rollny, Lisa R.; Carey, Graham H.; Fischer, Armin H.; Kemp, Kyle W.; Kramer, Illan J.; Ning, Zhijun; Labelle, André J.; Chou, Kang Wei; Amassian, Aram; Sargent, E. H.

    2012-01-01

    Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electrong-"hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device. © 2012 Macmillan Publishers Limited. All rights reserved.

  20. Passivation of Titanium Oxide in Polyethylene Matrices using Polyelectrolytes as Titanium Dioxide Surface Coating

    Directory of Open Access Journals (Sweden)

    Javier Vallejo-Montesinos

    2017-05-01

    Full Text Available One of the major challenges of the polyolefins nowadays is the ability of those to resist weathering conditions, specially the photodegradation process that suffer any polyolefin. A common way to prevent this, is the use of hindered amine light stabilizers (HALS are employed. An alternative route to avoid photodegradation is using polyelectrolites as coating of fillers such as metal oxides. Composites of polyethylene were made using titanium dioxide (TiO2 as a filler with polyelectrolytes (polyethylenimine and sodium polystyrene sulfonate attached to its surface, to passivate its photocatalytic activity. We exposed the samples to ultraviolet-visible (UV-Vis light to observe the effect of radiation on the degradation of coated samples, compared to those without the polyelectrolyte coating. From the experimental results, we found that polyethylenimine has a similar carbonyl signal area to the sample coated with hindered amine light stabilizers (HALS while sodium polystyrene sulfonate exhibit more degradation than the HALS coated samples, but it passivates the photocatalytic effect when compared with the non-coated TiO2 samples. Also, using AFM measurements, we confirmed that the chemical nature of polyethylenimine causes the TiO2 avoid the migration to the surface during the extrusion process, inhibiting the photodegradation process and softening the sample. On this basis, we found that polyethylenimine is a good choice for reducing the degradation caused by TiO2 when it is exposed to UV-Vis light.

  1. Microstructural evolution and surface properties of nanostructured Cu-based alloy by ultrasonic nanocrystalline surface modification technique

    Energy Technology Data Exchange (ETDEWEB)

    Amanov, Auezhan, E-mail: amanov_a@yahoo.com [Department of Mechanical Engineering, Sun Moon University, Asan 336-708 (Korea, Republic of); Cho, In-Sik [R& D Group, Mbrosia Co., Ltd., Asan 336-708 (Korea, Republic of); Pyun, Young-Sik [Department of Mechanical Engineering, Sun Moon University, Asan 336-708 (Korea, Republic of)

    2016-12-01

    Graphical abstract: - Highlights: • A nanostructured surface was produced by UNSM technique. • Porosities were eliminated from the surface by UNSM technique. • Extremely high hardness obtained at the top surface after UNSM treatment. • Friction and wear behavior was improved by UNSM technique. • Resistance to scratch behavior was improved by UNSM technique. - Abstract: A nanostructured surface layer with a thickness of about 180 μm was successfully produced in Cu-based alloy using an ultrasonic nanocrystalline surface modification (UNSM) technique. Cu-based alloy was sintered onto low carbon steel using a powder metallurgy (P/M) method. Transmission electron microscope (TEM) characterization revealed that the severe plastic deformation introduced by UNSM technique resulted in nano-sized grains in the topmost surface layer and deformation twins. It was also found by atomic force microscope (AFM) observations that the UNSM technique provides a significant reduction in number of interconnected pores. The effectiveness of nanostructured surface layer on the tribological and micro-scratch properties of Cu-based alloy specimens was investigated using a ball-on-disk tribometer and micro-scratch tester, respectively. Results exhibited that the UNSM-treated specimen led to an improvement in tribological and micro-scratch properties compared to that of the sintered specimen, which may be attributed to the presence of nanostructured surface layer having an increase in surface hardness and reduction in surface roughness. The findings from this study are expected to be implemented to the automotive industry, in particular connected rod bearings and bushings in order to increase the efficiency and performance of internal combustion engines (ICEs).

  2. Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

    Science.gov (United States)

    Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

    2013-03-02

    Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

  3. Non-Chromate Passivation of Zinc

    DEFF Research Database (Denmark)

    Tang, Peter Torben; Bech-Nielsen, G.

    1993-01-01

    Phos). The treatments are within the same concentration region, and they have a mutual pat-ent pending. Although some tests still need to be conducted, the following aspects are clear at the present time: The general appearance of the passivated zinc surface is very similar to a standard yellow chromate treatment...... successfully. The corrosion resistance against white rust on zinc and zinc alloys is just as good as that of yellow chromate, although the result de-pends on the corrosion test method as well as on the nature of the zinc substrate pas-sivated. The passivation procedure is simply a dip for approxi-mately 2...

  4. Multiple-scattering and DV-Xα analyses of a Cl-passivated Ge(111) surface

    International Nuclear Information System (INIS)

    Cao, S; Tang, J-C; Shen, S-L

    2003-01-01

    The multiple-scattering cluster and DV-Xα methods have been employed to analyse the chlorine 1s near edge x-ray absorption fine structure (NEXAFS) of a Cl-passivated Ge(111) surface. Our detailed analysis demonstrates how the chlorine atoms form a perfect monochloride structure with Cl bonding to the topmost Ge atom. Our calculation reveals the interaction in the chlorine layer is multipolar electrostatic forces. Furthermore, the DV-Xα cluster calculation shows that the orbital contour of the sharp Cl-Ge resonance exhibits a global symmetry, which confirms it to be σ * -like. The above studies are found to enrich previous experimental NEXAFS investigations

  5. Passive nondestructive assay of nuclear materials

    International Nuclear Information System (INIS)

    Reilly, D.; Ensslin, N.; Smith, H. Jr.; Kreiner, S.

    1991-03-01

    The term nondestructive assay (NDA) is applied to a series of measurement techniques for nuclear fuel materials. The techniques measure radiation induced or emitted spontaneously from the nuclear material; the measurements are nondestructive in that they do not alter the physical or chemical state of the nuclear material. NDA techniques are characterized as passive or active depending on whether they measure radiation from the spontaneous decay of the nuclear material or radiation induced by an external source. This book emphasizes passive NDA techniques, although certain active techniques like gamma-ray absorption densitometry and x-ray fluorescence are discussed here because of their intimate relation to passive assay techniques. The principal NDA techniques are classified as gamma-ray assay, neutron assay, and calorimetry. Gamma-ray assay techniques are treated in Chapters 1--10. Neutron assay techniques are the subject of Chapters 11--17. Chapters 11--13 cover the origin of neutrons, neutron interactions, and neutron detectors. Chapters 14--17 cover the theory and applications of total and coincidence neutron counting. Chapter 18 deals with the assay of irradiated nuclear fuel, which uses both gamma-ray and neutron assay techniques. Chapter 19 covers perimeter monitoring, which uses gamma-ray and neutron detectors of high sensitivity to check that no unauthorized nuclear material crosses a facility boundary. The subject of Chapter 20 is attribute and semiquantitative measurements. The goal of these measurements is a rapid verification of the contents of nuclear material containers to assist physical inventory verifications. Waste and holdup measurements are also treated in this chapter. Chapters 21 and 22 cover calorimetry theory and application, and Chapter 23 is a brief application guide to illustrate which techniques can be used to solve certain measurement problems

  6. Surface passivity largely governs the bioaccessibility of nickel-based powder particles at human exposure conditions.

    Science.gov (United States)

    Hedberg, Yolanda S; Herting, Gunilla; Latvala, Siiri; Elihn, Karine; Karlsson, Hanna L; Odnevall Wallinder, Inger

    2016-11-01

    The European chemical framework REACH requires that hazards and risks posed by chemicals, including alloys and metals, are identified and proven safe for humans and the environment. Therefore, differences in bioaccessibility in terms of released metals in synthetic biological fluids (different pH (1.5-7.4) and composition) that are relevant for different human exposure routes (inhalation, ingestion, and dermal contact) have been assessed for powder particles of an alloy containing high levels of nickel (Inconel 718, 57 wt% nickel). This powder is compared with the bioaccessibility of two nickel-containing stainless steel powders (AISI 316L, 10-12% nickel) and with powders representing their main pure alloy constituents: two nickel metal powders (100% nickel), two iron metal powders and two chromium metal powders. X-ray photoelectron spectroscopy, microscopy, light scattering, and nitrogen absorption were employed for the particle and surface oxide characterization. Atomic absorption spectroscopy was used to quantify released amounts of metals in solution. Cytotoxicity (Alamar blue assay) and DNA damage (comet assay) of the Inconel powder were assessed following exposure of the human lung cell line A549, as well as its ability to generate reactive oxygen species (DCFH-DA assay). Despite its high nickel content, the Inconel alloy powder did not release any significant amounts of metals and did not induce any toxic response. It is concluded, that this is related to the high surface passivity of the Inconel powder governed by its chromium-rich surface oxide. Read-across from the pure metal constituents is hence not recommended either for this or any other passive alloy. Copyright © 2016 The Author(s). Published by Elsevier Inc. All rights reserved.

  7. Fast New Method for Temporary Chemical Passivation

    Directory of Open Access Journals (Sweden)

    Marek Solčanský

    2012-12-01

    Full Text Available The main material parameter of silicon, that influences the effectiveness of photovoltaic cells, is the minority carrier bulk lifetime.It may change in the technological process especially during high temperature operations. Monitoring of the carrier bulk-lifetimeis necessary for modifying the whole technological process of production. For the measurement of the minority carrier bulk-lifetimethe characterization method MW PCD (Microwave Photoconductance Decay is used, where the result of measurement is the effectivecarrier lifetime, which is very dependent on the surface recombination velocity and therefore on the quality of a silicon surfacepassivation.This work deals with an examination of a different solution types for the chemical passivation of a silicon surface. Varioussolutions are tested on silicon wafers for their consequent comparison. The main purpose of this work is to find optimal solution, whichsuits the requirements of a time stability and start-up velocity of passivation, reproducibility of the measurements and a possibilityof a perfect cleaning of a passivating solution remains from a silicon surface. Another purpose of this work is to identify the parametersof other quinhydrone solutions with different concentrations as compared with the quinhydrone solution in methanol witha concentration of 0.07 mol/dm³ marked QM007 (referential solution.The method of an effective chemical passivation with a quinhydrone in methanol solution was suggested. The solution witha concentration of 0.07 mol /dm3 fulfills all required criteria. The work also confirms the influence of increased concentrationquinhydrone on the temporal stability of the passivation layer and the effect for textured silicon wafers. In conclusion, the influenceof an illumination and the temperature on the properties of the passivating solution QM007 is discussed.

  8. Role of bond adaptability in the passivation of colloidal quantum dot solids.

    Science.gov (United States)

    Thon, Susanna M; Ip, Alexander H; Voznyy, Oleksandr; Levina, Larissa; Kemp, Kyle W; Carey, Graham H; Masala, Silvia; Sargent, Edward H

    2013-09-24

    Colloidal quantum dot (CQD) solids are attractive materials for photovoltaic devices due to their low-cost solution-phase processing, high absorption cross sections, and their band gap tunability via the quantum size effect. Recent advances in CQD solar cell performance have relied on new surface passivation strategies. Specifically, cadmium cation passivation of surface chalcogen sites in PbS CQDs has been shown to contribute to lowered trap state densities and improved photovoltaic performance. Here we deploy a generalized solution-phase passivation strategy as a means to improving CQD surface management. We connect the effects of the choice of metal cation on solution-phase surface passivation, film-phase trap density of states, minority carrier mobility, and photovoltaic power conversion efficiency. We show that trap passivation and midgap density of states determine photovoltaic device performance and are strongly influenced by the choice of metal cation. Supported by density functional theory simulations, we propose a model for the role of cations, a picture wherein metals offering the shallowest electron affinities and the greatest adaptability in surface bonding configurations eliminate both deep and shallow traps effectively even in submonolayer amounts. This work illustrates the importance of materials choice in designing a flexible passivation strategy for optimum CQD device performance.

  9. Role of bond adaptability in the passivation of colloidal quantum dot solids

    KAUST Repository

    Thon, Susanna

    2013-09-24

    Colloidal quantum dot (CQD) solids are attractive materials for photovoltaic devices due to their low-cost solution-phase processing, high absorption cross sections, and their band gap tunability via the quantum size effect. Recent advances in CQD solar cell performance have relied on new surface passivation strategies. Specifically, cadmium cation passivation of surface chalcogen sites in PbS CQDs has been shown to contribute to lowered trap state densities and improved photovoltaic performance. Here we deploy a generalized solution-phase passivation strategy as a means to improving CQD surface management. We connect the effects of the choice of metal cation on solution-phase surface passivation, film-phase trap density of states, minority carrier mobility, and photovoltaic power conversion efficiency. We show that trap passivation and midgap density of states determine photovoltaic device performance and are strongly influenced by the choice of metal cation. Supported by density functional theory simulations, we propose a model for the role of cations, a picture wherein metals offering the shallowest electron affinities and the greatest adaptability in surface bonding configurations eliminate both deep and shallow traps effectively even in submonolayer amounts. This work illustrates the importance of materials choice in designing a flexible passivation strategy for optimum CQD device performance. © 2013 American Chemical Society.

  10. Use of passive alpha detectors to screen for uranium contamination in a field at Fernald, Ohio

    International Nuclear Information System (INIS)

    Dudney, C.S.; Meyer, K.E.; Gammage, R.B.; Wheeler, R.V.; Salasky, M.; Kotrappa, P.

    1995-01-01

    This paper reports the results from a field test of newly developed techniques for inexpensive, in situ screening of soil for alpha contamination. Passive alpha detectors that are commercially available for the detection indoor airborne alpha activity (i.e., 222 Rn) have been modified so they can be applied to the detection of alpha contamination on surfaces or in soils. Results reported here are from an intercomparison involving several different techniques with all measurements being made at the same sites in a field near the formerly used uranium processing facility at Fernald, Ohio, during the summer of 1994. The results for two types of passive alpha detector show that the quality of calibration is improved if soils samples are milled to increase homogeneity within the soil matrices. The correlation between laboratory based radiochemical analyses and quick, field-based screening measurements is acceptable and can be improved if the passive devices are left for longer exposure times in the field. The total cost per measurement for either type of passive alpha detector is probably less than $25 and should provide a cost-effective means for site managers to develop the information needed to find areas with remaining alpha contamination so resources can be allocated efficiently

  11. Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors (HEMTs)

    National Research Council Canada - National Science Library

    Fitch, R

    2002-01-01

    Three different passivation layers (SiN(x), MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs...

  12. 1-Dodecanethiol based highly stable self-assembled monolayers for germanium passivation

    International Nuclear Information System (INIS)

    Cai, Qi; Xu, Baojian; Ye, Lin; Di, Zengfeng; Huang, Shanluo; Du, Xiaowei; Zhang, Jishen; Jin, Qinghui; Zhao, Jianlong

    2015-01-01

    Highlights: • A simple and effective approach for higly stable germanium passivation. • 1-Dodecanethiol self-assembled monolayers for germanium oxidation resistance. • The influence factors of germanium passivation were systematically studied. • The stability of the passivated Ge was more than 10 days even in water conditions. - Abstract: As a typical semiconductor material, germanium has the potential to replace silicon for future-generation microelectronics, due to its better electrical properties. However, the lack of stable surface state has limited its extensive use for several decades. In this work, we demonstrated highly stable self-assembled monolayers (SAMs) on Ge surface to prevent oxidization for further applications. After the pretreatment in hydrochloric acid, the oxide-free and Cl-terminated Ge could be further coated with 1-dodecanethiol (NDM) SAMs. The influence factors including reaction time, solvent component and reaction temperature were optimized to obtain stable passivated monolayer for oxidation resistance. Contact angle analysis, atomic force microscopy, ellipsometer and X-ray photoelectron spectroscopy were performed to characterize the functionalized Ge surface respectively. Meanwhile, the reaction mechanism and stability of thiols SAMs on Ge (1 1 1) surface were investigated. Finally, highly stable passivated NDM SAMs on Ge surface could be formed through immersing oxide-free Ge in mixture solvent (water/ethanol, v/v = 1:1) at appropriately elevated temperature (∼80 °C) for 24 h. And the corresponding optimized passivated Ge surface was stable for more than 10 days even in water condition, which was much longer than the data reported and paved the way for the future practical applications of Ge.

  13. 1-Dodecanethiol based highly stable self-assembled monolayers for germanium passivation

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Qi [State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No. 865, Changning Road, Shanghai 200050 (China); University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Beijing 100049 (China); Xu, Baojian, E-mail: xbj@mail.sim.ac.cn [State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No. 865, Changning Road, Shanghai 200050 (China); Shanghai Internet of Things Co., LTD, No. 1455, Pingcheng Road, Shanghai 201899 (China); Ye, Lin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No. 865, Changning Road, Shanghai 200050 (China); University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Beijing 100049 (China); Di, Zengfeng [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No. 865, Changning Road, Shanghai 200050 (China); Huang, Shanluo; Du, Xiaowei [State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No. 865, Changning Road, Shanghai 200050 (China); University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Beijing 100049 (China); Zhang, Jishen; Jin, Qinghui [State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No. 865, Changning Road, Shanghai 200050 (China); Zhao, Jianlong, E-mail: jlzhao@mail.sim.ac.cn [State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No. 865, Changning Road, Shanghai 200050 (China)

    2015-10-30

    Highlights: • A simple and effective approach for higly stable germanium passivation. • 1-Dodecanethiol self-assembled monolayers for germanium oxidation resistance. • The influence factors of germanium passivation were systematically studied. • The stability of the passivated Ge was more than 10 days even in water conditions. - Abstract: As a typical semiconductor material, germanium has the potential to replace silicon for future-generation microelectronics, due to its better electrical properties. However, the lack of stable surface state has limited its extensive use for several decades. In this work, we demonstrated highly stable self-assembled monolayers (SAMs) on Ge surface to prevent oxidization for further applications. After the pretreatment in hydrochloric acid, the oxide-free and Cl-terminated Ge could be further coated with 1-dodecanethiol (NDM) SAMs. The influence factors including reaction time, solvent component and reaction temperature were optimized to obtain stable passivated monolayer for oxidation resistance. Contact angle analysis, atomic force microscopy, ellipsometer and X-ray photoelectron spectroscopy were performed to characterize the functionalized Ge surface respectively. Meanwhile, the reaction mechanism and stability of thiols SAMs on Ge (1 1 1) surface were investigated. Finally, highly stable passivated NDM SAMs on Ge surface could be formed through immersing oxide-free Ge in mixture solvent (water/ethanol, v/v = 1:1) at appropriately elevated temperature (∼80 °C) for 24 h. And the corresponding optimized passivated Ge surface was stable for more than 10 days even in water condition, which was much longer than the data reported and paved the way for the future practical applications of Ge.

  14. S-wave velocity measurements along levees in New Orleans using passive surface wave methods

    Science.gov (United States)

    Hayashi, K.; Lorenzo, J. M.; Craig, M. S.; Gostic, A.

    2017-12-01

    In order to develop non-invasive methods for levee inspection, geophysical investigations were carried out at four sites along levees in the New Orleans area: 17th Street Canal, London Avenue Canal, Marrero Levee, and Industrial Canal. Three of the four sites sustained damage from Hurricane Katrina in 2005 and have since been rebuilt. The geophysical methods used include active and passive surface wave methods, and capacitively coupled resistivity. This paper summarizes the acquisition and analysis of the 1D and 2D passive surface wave data. Twelve wireless seismic data acquisition units with 2 Hz vertical component geophones were used to record data. Each unit includes a GPS receiver so that all units can be synchronized over any distance without cables. The 1D passive method used L shaped arrays of three different sizes with geophone spacing ranging from 5 to 340 m. Ten minutes to one hour of ambient noise was recorded with each array, and total data acquisition took approximately two hours at each site. The 2D method used a linear array with a geophone spacing of 5m. Four geophones were moved forward every 10 minutes along 400 1000 m length lines. Data acquisition took several hours for each line. Recorded ambient noise was processed using the spatial autocorrelation method and clear dispersion curves were obtained at all sites (Figure 1a). Minimum frequencies ranged from 0.4 to 0.7 Hz and maximum frequencies ranged from 10 to 30 Hz depending on the site. Non-linear inversion was performed and 1D and 2D S-wave velocity models were obtained. The 1D method penetrated to depths ranging from 200 to 500 m depending on the site (Figure 1b). The 2D method penetrated to a depth of 40 60 m and provided 400 1000 m cross sections along the levees (Figure 2). The interpretation focused on identifying zones beneath the levees or canal walls having low S-wave velocities corresponding to saturated, unconsolidated sands, or low-rigidity clays. Resultant S-wave velocity profiles

  15. A passive air sampler for characterizing the vertical concentration profile of gaseous phase polycyclic aromatic hydrocarbons in near soil surface air

    International Nuclear Information System (INIS)

    Zhang Yuzhong; Deng Shuxing; Liu Yanan; Shen Guofeng; Li Xiqing; Cao Jun; Wang Xilong; Reid, Brian; Tao Shu

    2011-01-01

    Air-soil exchange is an important process governing the fate of polycyclic aromatic hydrocarbons (PAHs). A novel passive air sampler was designed and tested for measuring the vertical concentration profile of 4 low molecular weight PAHs in gaseous phase (PAH LMW4 ) in near soil surface air. Air at various heights from 5 to 520 mm above the ground was sampled by polyurethane foam disks held in down-faced cartridges. The samplers were tested at three sites: A: an extremely contaminated site, B: a site near A, and C: a background site on a university campus. Vertical concentration gradients were revealed for PAH LMW4 within a thin layer close to soil surface at the three sites. PAH concentrations either decreased (Site A) or increased (Sites B and C) with height, suggesting either deposition to or evaporation from soils. The sampler is a useful tool for investigating air-soil exchange of gaseous phase semi-volatile organic chemicals. - Research highlights: → Design, field test and calibration of the novel passive air sampler, PAS-V-I. → Vertical concentration gradients of PAH LMW4 within a thin layer close to soil. → Comparison of results between PAS-V-I measurement and fugacity approach. → Potential application of PAS-V-I and further modifications. - A novel passive sampling device was developed and tested for measuring vertical concentration profile of gaseous phase polycyclic aromatic hydrocarbons in near soil surface air.

  16. Active and Passive Remote Sensing Data Time Series for Flood Detection and Surface Water Mapping

    Science.gov (United States)

    Bioresita, Filsa; Puissant, Anne; Stumpf, André; Malet, Jean-Philippe

    2017-04-01

    As a consequence of environmental changes surface waters are undergoing changes in time and space. A better knowledge of the spatial and temporal distribution of surface waters resources becomes essential to support sustainable policies and development activities. Especially because surface waters, are not only a vital sweet water resource, but can also pose hazards to human settlements and infrastructures through flooding. Floods are a highly frequent disaster in the world and can caused huge material losses. Detecting and mapping their spatial distribution is fundamental to ascertain damages and for relief efforts. Spaceborne Synthetic Aperture Radar (SAR) is an effective way to monitor surface waters bodies over large areas since it provides excellent temporal coverage and, all-weather day-and-night imaging capabilities. However, emergent vegetation, trees, wind or flow turbulence can increase radar back-scatter returns and pose problems for the delineation of inundated areas. In such areas, passive remote sensing data can be used to identify vegetated areas and support the interpretation of SAR data. The availability of new Earth Observation products, for example Sentinel-1 (active) and Sentinel-2 (passive) imageries, with both high spatial and temporal resolution, have the potential to facilitate flood detection and monitoring of surface waters changes which are very dynamic in space and time. In this context, the research consists of two parts. In the first part, the objective is to propose generic and reproducible methodologies for the analysis of Sentinel-1 time series data for floods detection and surface waters mapping. The processing chain comprises a series of pre-processing steps and the statistical modeling of the pixel value distribution to produce probabilistic maps for the presence of surface waters. Images pre-processing for all Sentinel-1 images comprise the reduction SAR effect like orbit errors, speckle noise, and geometric effects. A modified

  17. Passive solar design strategies: Remodeling guidelines for conserving energy at home

    Science.gov (United States)

    The idea of passive solar is simple, but applying it effectively does require information and attention to the details of design and construction. Some passive solar techniques are modest and low-cost, and require only small changes in remodeler's typical practice. At the other end of the spectrum, some passive solar systems can almost eliminate a house's need for purchased heating (and in some cases, cooling) energy - but probably at a relatively high first cost. In between are a broad range of energy-conserving passive solar techniques. Whether or not they are cost-effective, practical, and attractive enough to offer a market advantage to any individual remodeler depends on very specific factors such as local costs, climate, and market characteristics. Passive Solar Design Strategies: Remodeling Guidelines For Conserving Energy At Home is written to help give remodelers the information they need to make these decisions. Passive Solar Design Strategies is a package in three basic parts: the guidelines contain information about passive solar techniques and how they work, and provides specific examples of systems which will save various percentages of energy; the worksheets offer a simple, fill-in-the-blank method to pre-evaluate the performance of a specific design; and the worked example demonstrates how to complete the worksheets for a typical residence.

  18. Effect of passivation with CO on the electrochemical corrosion behavior of uranium-niobium alloy

    International Nuclear Information System (INIS)

    Fu Xiaoguo; Dai Lianxin; Zou Juesheng; Bai Chaomao; Wang Xiaolin

    2000-01-01

    Electrochemical studies are performed to investigate the corrosion resistance of uranium-niobium alloy before and after passivated with carbon monoxide. Using X-ray photoelectron spectroscopy (XPS), the surface composition of specimen passivated with carbon monoxide is determined. The corrosion resistance of uranium-niobium alloy is well improved because the passive layer (UC/UC x O y + Nb 2 O 5 + UO 2 ) on surface serves as passive film and increases the anodic impedance after the specimen is passivated with carbon monoxide

  19. Optical and impedance characteristics of passive films on pure aluminium

    International Nuclear Information System (INIS)

    Krishnakumar, R.; Szklarska-Smialowska, Z.

    1992-01-01

    Optical and Impedance behavior of pure bulk aluminum and pure sputtered aluminum film were studied in order to gain a better understanding of their fundamental passivation and pitting characteristics. Constant potential experiments at the passivation and pitting potentials, and potentiostatic anodic polarization were conducted while simultaneously monitoring the current, impedance and optical behavior, in-situ. Noise characteristics in the current data during the pit incubation period indicate that Cl - ions migrate with little impediment to the metal surface through defects in the passive film. Impedance experiments indicate that the polarization resistance fluctuates continuously with time during the pit incubation period, suggesting that impedance spectroscopy is sensitive to localized processes. The interfacial capacitance increases continuously during this time. The smallest pits observed on the sample surface (less than 10μ) are clearly crystallographic, indicating activation controlled dissolution at pits. The film capacitance increases with exposure time at the passivation potential, while the polarization resistance decreases continuously. The decrease in the film resistance is thought to be due to chloride incorporation at defects in the passive film. The increase in film capacitance at the passivation and pitting potential is due to an increase in the film dielectric constant caused by either a compositional change or anion incorporation. Ellipsometry results indicate growth of a dual layered film on the pure aluminum surface, with the outer layer probably containing varying amounts of incorporated chloride depending on the applied potential. Preliminary experiments indicate that in the case of sputtered aluminum film, the passive film resistance is at least an order of magnitude higher than that of bulk aluminum. This is due to the fine grain structure of sputtered Al and hence a more defect free passive film than that formed on bulk aluminum. There is

  20. Modification of the large-scale features of high Reynolds number wall turbulence by passive surface obtrusions

    Energy Technology Data Exchange (ETDEWEB)

    Monty, J.P.; Lien, K.; Chong, M.S. [University of Melbourne, Department of Mechanical Engineering, Parkville, VIC (Australia); Allen, J.J. [New Mexico State University, Department of Mechanical Engineering, Las Cruces, NM (United States)

    2011-12-15

    A high Reynolds number boundary-layer wind-tunnel facility at New Mexico State University was fitted with a regularly distributed braille surface. The surface was such that braille dots were closely packed in the streamwise direction and sparsely spaced in the spanwise direction. This novel surface had an unexpected influence on the flow: the energy of the very large-scale features of wall turbulence (approximately six-times the boundary-layer thickness in length) became significantly attenuated, even into the logarithmic region. To the author's knowledge, this is the first experimental study to report a modification of 'superstructures' in a rough-wall turbulent boundary layer. The result gives rise to the possibility that flow control through very small, passive surface roughness may be possible at high Reynolds numbers, without the prohibitive drag penalty anticipated heretofore. Evidence was also found for the uninhibited existence of the near-wall cycle, well known to smooth-wall-turbulence researchers, in the spanwise space between roughness elements. (orig.)

  1. Lipid-Based Passivation in Nanofluidics

    Science.gov (United States)

    2012-01-01

    Stretching DNA in nanochannels is a useful tool for direct, visual studies of genomic DNA at the single molecule level. To facilitate the study of the interaction of linear DNA with proteins in nanochannels, we have implemented a highly effective passivation scheme based on lipid bilayers. We demonstrate virtually complete long-term passivation of nanochannel surfaces to a range of relevant reagents, including streptavidin-coated quantum dots, RecA proteins, and RecA–DNA complexes. We show that the performance of the lipid bilayer is significantly better than that of standard bovine serum albumin-based passivation. Finally, we show how the passivated devices allow us to monitor single DNA cleavage events during enzymatic degradation by DNase I. We expect that our approach will open up for detailed, systematic studies of a wide range of protein–DNA interactions with high spatial and temporal resolution. PMID:22432814

  2. Role of bond adaptability in the passivation of colloidal quantum dot solids

    KAUST Repository

    Thon, Susanna; Ip, Alex; Voznyy, Oleksandr; Levina, Larissa; Kemp, Kyle W.; Carey, Graham H.; Masala, Silvia; Sargent, E. H.

    2013-01-01

    . Here we deploy a generalized solution-phase passivation strategy as a means to improving CQD surface management. We connect the effects of the choice of metal cation on solution-phase surface passivation, film-phase trap density of states, minority

  3. Results of a Demonstration Assessment of Passive System Reliability Utilizing the Reliability Method for Passive Systems (RMPS)

    Energy Technology Data Exchange (ETDEWEB)

    Bucknor, Matthew; Grabaskas, David; Brunett, Acacia; Grelle, Austin

    2015-04-26

    Advanced small modular reactor designs include many advantageous design features such as passively driven safety systems that are arguably more reliable and cost effective relative to conventional active systems. Despite their attractiveness, a reliability assessment of passive systems can be difficult using conventional reliability methods due to the nature of passive systems. Simple deviations in boundary conditions can induce functional failures in a passive system, and intermediate or unexpected operating modes can also occur. As part of an ongoing project, Argonne National Laboratory is investigating various methodologies to address passive system reliability. The Reliability Method for Passive Systems (RMPS), a systematic approach for examining reliability, is one technique chosen for this analysis. This methodology is combined with the Risk-Informed Safety Margin Characterization (RISMC) approach to assess the reliability of a passive system and the impact of its associated uncertainties. For this demonstration problem, an integrated plant model of an advanced small modular pool-type sodium fast reactor with a passive reactor cavity cooling system is subjected to a station blackout using RELAP5-3D. This paper discusses important aspects of the reliability assessment, including deployment of the methodology, the uncertainty identification and quantification process, and identification of key risk metrics.

  4. Bayesian techniques for surface fuel loading estimation

    Science.gov (United States)

    Kathy Gray; Robert Keane; Ryan Karpisz; Alyssa Pedersen; Rick Brown; Taylor Russell

    2016-01-01

    A study by Keane and Gray (2013) compared three sampling techniques for estimating surface fine woody fuels. Known amounts of fine woody fuel were distributed on a parking lot, and researchers estimated the loadings using different sampling techniques. An important result was that precise estimates of biomass required intensive sampling for both the planar intercept...

  5. Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al2O3 surface passivation

    Science.gov (United States)

    Asif, Muhammad; Chen, Chen; Peng, Ding; Xi, Wang; Zhi, Jin

    2018-04-01

    Owing to the great influence of surface passivation on DC and RF performance of InP-based HEMTs, the DC and RF performance of InAlAs/InGaAs InP HEMTs were studied before and after passivation, using an ultra-thin 15 nm atomic layer deposition Al2O3 layer. Increase in Cgs and Cgd was significantly limited by scaling the thickness of the Al2O3 layer. For verification, an analytical small-signal equivalent circuit model was developed. A significant increase in maximum transconductance (gm) up to 1150 mS/mm, drain current (IDS) up to 820 mA/mm and fmax up to 369.7 GHz was observed, after passivation. Good agreement was obtained between the measured and the simulated results. This shows that the RF performance of InP-based HEMTs can be improved by using an ultra-thin ALD-Al2O3 surface passivation.

  6. Enhanced Charge Collection with Passivation Layers in Perovskite Solar Cells.

    Science.gov (United States)

    Lee, Yong Hui; Luo, Jingshan; Son, Min-Kyu; Gao, Peng; Cho, Kyung Taek; Seo, Jiyoun; Zakeeruddin, Shaik M; Grätzel, Michael; Nazeeruddin, Mohammad Khaja

    2016-05-01

    The Al2 O3 passivation layer is beneficial for mesoporous TiO2 -based perovskite solar cells when it is deposited selectively on the compact TiO2 surface. Such a passivation layer suppressing surface recombination can be formed by thermal decomposition of the perovskite layer during post-annealing. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Passive solar design strategies: Remodeling guidelines for conserving energy at home

    Energy Technology Data Exchange (ETDEWEB)

    1991-01-01

    The idea of passive solar is simple, but applying it effectively does require information and attention to the details of design and construction. Some passive solar techniques are modest and low-cost, and require only small changes in remodeler's typical practice. At the other end of the spectrum, some passive solar systems can almost eliminate a house's need for purchased heating (and in some cases, cooling) energy -- but probably at a relatively high first cost. In between are a broad range of energy-conserving passive solar techniques. Whether or not they are cost-effective, practical and attractive enough to offer a market advantage to any individual remodeler depends on very specific factors such as local costs, climate, and market characteristics. Passive solar design strategies: Remodeling Guidelines For Conserving Energy At Homes is written to help give remodelers the information they need to make these decisions. Passive Solar Design Strategies is a package in three basic parts: The Guidelines contain information about passive solar techniques and how they work, and provides specific examples of systems which will save various percentages of energy; The Worksheets offer a simple, fill-in-the-blank method to pre-evaluate the performance of a specific design; The Worked Example demonstrates how to complete the worksheets for a typical residence.

  8. Comparison of Passive Stiffness Changes in the Supraspinatus Muscle after Double-row and Knotless Transosseous-equivalent Rotator Cuff Repair Techniques: A Cadaveric Study

    Science.gov (United States)

    Hatta, Taku; Giambini, Hugo; Hooke, Alexander W.; Zhao, Chunfeng; Sperling, John W.; Steinmann, Scott P.; Yamamoto, Nobuyuki; Itoi, Eiji; An, Kai-Nan

    2016-01-01

    Purpose To investigate the alteration of passive stiffness in the supraspinatus muscle after double-row (DR) and knotless transosseous-equivalent (KL-TOE) repair techniques, using the shear wave elastography (SWE) in cadavers with rotator cuff tears. We also aimed to compare altered muscular stiffness after these repairs to that obtained from shoulders with intact rotator cuff tendon. Methods Twelve fresh-frozen cadaveric shoulders with rotator cuff tear (tear size; small [6], medium-large [6]) were used. Passive stiffness of four anatomical regions in the supraspinatus muscle was measured based on an established SWE method. Each specimen underwent DR and KL-TOE footprint repairs at 30° glenohumeral abduction. SWE values, obtained at 0°, 10°, 20°, 30°, 60°, and 90° abduction, were assessed in 3 different conditions: preoperative (torn) and postoperative conditions with the 2 techniques. The increase ratio of SWE values after repair was compared among the four regions to assess stiffness distribution. In addition, SWE values were obtained on 12 shoulders with intact rotator cuff tendons as control. Results In shoulders with medium-large size tears, supraspinatus muscles showed an increased passive stiffness after rotator cuff repairs, and this was significantly observed at adducted positions. KL-TOE repair showed uniform stiffness changes among the four regions of the supraspinatus muscle (mean, 189-218% increase after repair), whereas, DR repair caused a significantly heterogeneous stiffness distribution within the muscle (mean, 187-319% after repair, P = 0.002). Although a repair-induced increase in muscle stiffness was observed also in small size tear, there were no significant differences in repaired stiffness changes between DR and KL-TOE (mean, 127-138% and 127-130% after repairs, respectively). Shoulders with intact rotator cuff tendon showed uniform SWE values among the four regions of the supraspinatus muscle (mean, 38.2-43.0 kPa). Conclusion Passive

  9. Passive Plasma Contact Mechanisms for Small-Scale Spacecraft

    Science.gov (United States)

    McTernan, Jesse K.

    Small-scale spacecraft represent a paradigm shift in how entities such as academia, industry, engineering firms, and the scientific community operate in space. However, although the paradigm shift produces unique opportunities to build satellites in unique ways for novel missions, there are also significant challenges that must be addressed. This research addresses two of the challenges associated with small-scale spacecraft: 1) the miniaturization of spacecraft and associated instrumentation and 2) the need to transport charge across the spacecraft-environment boundary. As spacecraft decrease in size, constraints on the size, weight, and power of on-board instrumentation increase--potentially limiting the instrument's functionality or ability to integrate with the spacecraft. These constraints drive research into mechanisms or techniques that use little or no power and efficiently utilize existing resources. One limited resource on small-scale spacecraft is outer surface area, which is often covered with solar panels to meet tight power budgets. This same surface area could also be needed for passive neutralization of spacecraft charging. This research explores the use of a transparent, conductive layer on the solar cell coverglass that is electrically connected to spacecraft ground potential. This dual-purpose material facilitates the use of outer surfaces for both energy harvesting of solar photons as well as passive ion collection. Mission capabilities such as in-situ plasma measurements that were previously infeasible on small-scale platforms become feasible with the use of indium tin oxide-coated solar panel coverglass. We developed test facilities that simulate the space environment in low Earth orbit to test the dual-purpose material and the various application of this approach. Particularly, this research is in support of two upcoming missions: OSIRIS-3U, by Penn State's Student Space Programs Lab, and MiTEE, by the University of Michigan. The purpose of

  10. Bioprinting of Cartilage and Skin Tissue Analogs Utilizing a Novel Passive Mixing Unit Technique for Bioink Precellularization

    Science.gov (United States)

    Thayer, Patrick Scott; Orrhult, Linnea Stridh; Martínez, Héctor

    2018-01-01

    Bioprinting is a powerful technique for the rapid and reproducible fabrication of constructs for tissue engineering applications. In this study, both cartilage and skin analogs were fabricated after bioink pre-cellularization utilizing a novel passive mixing unit technique. This technique was developed with the aim to simplify the steps involved in the mixing of a cell suspension into a highly viscous bioink. The resolution of filaments deposited through bioprinting necessitates the assurance of uniformity in cell distribution prior to printing to avoid the deposition of regions without cells or retention of large cell clumps that can clog the needle. We demonstrate the ability to rapidly blend a cell suspension with a bioink prior to bioprinting of both cartilage and skin analogs. Both tissue analogs could be cultured for up to 4 weeks. Histological analysis demonstrated both cell viability and deposition of tissue specific extracellular matrix (ECM) markers such as glycosaminoglycans (GAGs) and collagen I respectively. PMID:29364216

  11. Effect of temperature on the passivation behavior of steel rebar

    Science.gov (United States)

    Chen, Shan-meng; Cao, Bei; Wu, Yin-shun; Ma, Ke

    2014-05-01

    Steel rebar normally forms an oxide or rusty skin before it is embedded into concrete and the passivation properties of this skin will be heavily influenced by temperature. To study the effect of temperature on the passivation properties of steel rebar under different surface conditions, we conducted scanning electron microscopy (SEM) observations and electrochemical measurements, such as measurements of the free corrosion potential and polarization curves of HPB235 steel rebar. These measurements identified three kinds of surfaces: polished, oxide skin, and rusty skin. Our results show that the passivation properties of all the surface types decrease with the increase of temperature. Temperature has the greatest effect on the rusty-skin rebar and least effect on the polished steel rebar, because of cracks and crevices on the mill scale on the steel rebar's surface. The rusty-skin rebar exhibits the highest corrosion rate because crevice corrosion can accelerate the corrosion of the steel rebar, particularly at high temperature. The results also indicate that the threshold temperatures of passivation for the oxide-skin rebar and the rusty-skin rebar are 37°C and 20°C, respectively.

  12. Enhanced Passive Cooling for Waterless-Power Production Technologies

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, Salvador B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2016-06-14

    Recent advances in the literature and at SNL indicate the strong potential for passive, specialized surfaces to significantly enhance power production output. Our exploratory computational and experimental research indicates that fractal and swirl surfaces can help enable waterless-power production by increasing the amount of heat transfer and turbulence, when compared with conventional surfaces. Small modular reactors, advanced reactors, and non-nuclear plants (e.g., solar and coal) are ideally suited for sCO2 coolant loops. The sCO2 loop converts the thermal heat into electricity, while the specialized surfaces passively and securely reject the waste process heat in an environmentally benign manner. The resultant, integrated energy systems are highly suitable for small grids, rural areas, and arid regions.

  13. Passive safety system of a super fast reactor

    Energy Technology Data Exchange (ETDEWEB)

    Sutanto, E-mail: sutanto@fuji.waseda.jp [Cooperative Major in Nuclear Energy, Waseda University, Tokyo (Japan); Polytechnic Institute of Nuclear Technology—National Nuclear Energy Agency, Yogyakarta (Indonesia); Oka, Yoshiaki [The University of Tokyo, Tokyo (Japan)

    2015-08-15

    Highlights: • Passive safety system of a Super FR is proposed. • Total loss of feedwater flow and large LOCA are analyzed. • The criteria of MCST and core pressure are satisfied. - Abstract: Passive safety systems of a Super Fast Reactor are studied. The passive safety systems consist of isolation condenser (IC), automatic depressurization system (ADS), core make-up tank (CMT), gravity driven cooling system (GDCS), and passive containment cooling system (PCCS). Two accidents of total loss of feedwater flow and 100% cold-leg break large LOCA are analyzed by using the passive systems and the criteria of maximum cladding surface temperature (MCST) and maximum core pressure are satisfied. The isolation condenser can be used for mitigation of the accident of total loss of feedwater flow at both supercritical and subcritical pressures. The ADS is used for depressurization leading to a loss of coolant during line switching to operation of the isolation condenser at subcritical pressure. Use of CMT during line switching recovers the lost coolant. In case of large LOCA, GDCS can be used for core reflooding. Coolant vaporization in the core released to containment through the break is condensed by passive containment cooling system. The condensate flows to the GDCS pool by gravity force. The maximum cladding surface temperature (MCST) of the accident satisfies the criterion.

  14. Constructing passive houses

    Energy Technology Data Exchange (ETDEWEB)

    Oehler, S. [Oehler Faigle Archkom Solar Architektur, Bretten (Germany)

    2005-07-01

    Everybody can learn to build energy-efficient. It needs theoretical and practical experience. 1997 we built the first freestanding Passive House in Europe, the Passive House Oehler. There had been a lot of questions, starting with the insecurity, whether the calculation program of the Passive House Institute, the PHPP, is working properly in our case. Nobody knew at that time because nobody tried it out before. It took us a lot of time to find out and every detail of the construction hat to be invented to meet the very high demand of thermal quality. All the following houses needed less time and had fewer open questions, adding one piece of experience with every building. 2002 we realised the biggest Passive House, the office building Energon Ulm with 420 working spaces. In the meantime we have learned a lot like how to produce prefabricated timber elements for the facades, providing good insulation, air tightness and avoiding serious thermal bridges. We have proofed, that any kind of building type can be a Passive House. And with increasing experience the freedom of design and construction is growing. Even the economical efficiency increased. The Energon Ulm is providing a much better indoor climate than any other office building and was build 10 % cheaper than an average German office building. At present the Passive House Standard is the most efficient solution for the user to live in the desired comfort zone between 20 C and 25 C. This zone of individual feeling-well can be described with the term ''operative temperature''. This term is defined by factors like air temperature, radiation temperature of warm and cold surfaces, air speed and humidity. The result of all these factors has to be within 18 C to 25 C without accepting one of the factors getting extreme.

  15. Active and Passive Microrheology: Theory and Simulation

    Science.gov (United States)

    Zia, Roseanna N.

    2018-01-01

    Microrheological study of complex fluids traces its roots to the work of the botanist Robert Brown in the early nineteenth century. Indeed, passive microrheology and Brownian motion are one and the same. Once thought to reveal a fundamental life force, the phenomenon was ultimately leveraged by Einstein in proof of the atomic nature of matter ( Haw 2006 ). His work simultaneously paved the way for modern-day passive microrheology by connecting observable particle motion—diffusion—to solvent properties—the viscosity—via the well-known Stokes-Einstein relation. Advances in microscopy techniques in the last two decades have prompted extensions of the original model to generalized forms for passive probing of complex fluids. In the last decade, active microrheology has emerged as a means by which to interrogate the nonequilibrium behavior of complex fluids, in particular, the non-Newtonian rheology of dynamically heterogeneous and microscopically small systems. Here we review theoretical and computational approaches and advances in both passive and active microrheology, with a focus on the extent to which these techniques preserve the connection between single-particle motion and flow properties, as well as the rather surprising recovery of non-Newtonian flow behavior observed in bulk rheology.

  16. Multiple sectioning and perforation techniques for TEM sub-surface studies

    International Nuclear Information System (INIS)

    Lee, E.H.; Rowcliffe, A.F.

    1978-01-01

    Techniques for preparing multiple electron transparent regions at several depth levels below the surface of a metal disk specimen are described. These techniques are relatively rapid and find application in many areas involving surface studies. Examples are shown of multiple thin areas produced at intervals of approximately 200 nm below the original surface of a stainless steel bombarded with 4 MeV Ni +2 ions for void swelling studies

  17. Estimating surface soil moisture from SMAP observations using a Neural Network technique.

    Science.gov (United States)

    Kolassa, J; Reichle, R H; Liu, Q; Alemohammad, S H; Gentine, P; Aida, K; Asanuma, J; Bircher, S; Caldwell, T; Colliander, A; Cosh, M; Collins, C Holifield; Jackson, T J; Martínez-Fernández, J; McNairn, H; Pacheco, A; Thibeault, M; Walker, J P

    2018-01-01

    A Neural Network (NN) algorithm was developed to estimate global surface soil moisture for April 2015 to March 2017 with a 2-3 day repeat frequency using passive microwave observations from the Soil Moisture Active Passive (SMAP) satellite, surface soil temperatures from the NASA Goddard Earth Observing System Model version 5 (GEOS-5) land modeling system, and Moderate Resolution Imaging Spectroradiometer-based vegetation water content. The NN was trained on GEOS-5 soil moisture target data, making the NN estimates consistent with the GEOS-5 climatology, such that they may ultimately be assimilated into this model without further bias correction. Evaluated against in situ soil moisture measurements, the average unbiased root mean square error (ubRMSE), correlation and anomaly correlation of the NN retrievals were 0.037 m 3 m -3 , 0.70 and 0.66, respectively, against SMAP core validation site measurements and 0.026 m 3 m -3 , 0.58 and 0.48, respectively, against International Soil Moisture Network (ISMN) measurements. At the core validation sites, the NN retrievals have a significantly higher skill than the GEOS-5 model estimates and a slightly lower correlation skill than the SMAP Level-2 Passive (L2P) product. The feasibility of the NN method was reflected by a lower ubRMSE compared to the L2P retrievals as well as a higher skill when ancillary parameters in physically-based retrievals were uncertain. Against ISMN measurements, the skill of the two retrieval products was more comparable. A triple collocation analysis against Advanced Microwave Scanning Radiometer 2 (AMSR2) and Advanced Scatterometer (ASCAT) soil moisture retrievals showed that the NN and L2P retrieval errors have a similar spatial distribution, but the NN retrieval errors are generally lower in densely vegetated regions and transition zones.

  18. Reprocessing the Historical Satellite Passive Microwave Record at Enhanced Spatial Resolutions using Image Reconstruction

    Science.gov (United States)

    Hardman, M.; Brodzik, M. J.; Long, D. G.; Paget, A. C.; Armstrong, R. L.

    2015-12-01

    Beginning in 1978, the satellite passive microwave data record has been a mainstay of remote sensing of the cryosphere, providing twice-daily, near-global spatial coverage for monitoring changes in hydrologic and cryospheric parameters that include precipitation, soil moisture, surface water, vegetation, snow water equivalent, sea ice concentration and sea ice motion. Currently available global gridded passive microwave data sets serve a diverse community of hundreds of data users, but do not meet many requirements of modern Earth System Data Records (ESDRs) or Climate Data Records (CDRs), most notably in the areas of intersensor calibration, quality-control, provenance and consistent processing methods. The original gridding techniques were relatively primitive and were produced on 25 km grids using the original EASE-Grid definition that is not easily accommodated in modern software packages. Further, since the first Level 3 data sets were produced, the Level 2 passive microwave data on which they were based have been reprocessed as Fundamental CDRs (FCDRs) with improved calibration and documentation. We are funded by NASA MEaSUREs to reprocess the historical gridded data sets as EASE-Grid 2.0 ESDRs, using the most mature available Level 2 satellite passive microwave (SMMR, SSM/I-SSMIS, AMSR-E) records from 1978 to the present. We have produced prototype data from SSM/I and AMSR-E for the year 2003, for review and feedback from our Early Adopter user community. The prototype data set includes conventional, low-resolution ("drop-in-the-bucket" 25 km) grids and enhanced-resolution grids derived from the two candidate image reconstruction techniques we are evaluating: 1) Backus-Gilbert (BG) interpolation and 2) a radiometer version of Scatterometer Image Reconstruction (SIR). We summarize our temporal subsetting technique, algorithm tuning parameters and computational costs, and include sample SSM/I images at enhanced resolutions of up to 3 km. We are actively

  19. Seismic Passive Control of Cable-Stayed Bridges

    Directory of Open Access Journals (Sweden)

    Hosam-Eddin M. Ali

    1995-01-01

    Full Text Available A three-dimensional modeling procedure is proposed for cable-stayed bridges with rubber, steel, and lead energy dissipation devices. The passive control technique is investigated by considering the response of bridge models with and without energy dissipation devices. The impact of various design parameters on the seismic response of current and future bridge designs is studied. Appropriate locations and properties of the passive devices can achieve better performance for cable-stayed bridges by balancing the significant reduction in earthquake-induced forces against tolerable displacements. Proper design of passive systems can help provide solutions for retro-fitting some existing bridges.

  20. Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors.

    Science.gov (United States)

    Lv, Y J; Song, X B; Wang, Y G; Fang, Y L; Feng, Z H

    2016-12-01

    Ultra-thin AlN/GaN heterostructure field-effect transistors (HFETs) with, and without, SiN passivation were fabricated by the same growth and device processes. Based on the measured DC characteristics, including the capacitance-voltage (C-V) and output current-voltage (I-V) curves, the variation of electron mobility with gate bias was found to be quite different for devices with, and without, SiN passivation. Although the AlN barrier layer is ultra thin (c. 3 nm), it was proved that SiN passivation induces no additional tensile stress and has no significant influence on the piezoelectric polarization of the AlN layer using Hall and Raman measurements. The SiN passivation was found to affect the surface properties, thereby increasing the electron density of the two-dimensional electron gas (2DEG) under the access region. The higher electron density in the access region after SiN passivation enhanced the electrostatic screening for the non-uniform distributed polarization charges, meaning that the polarization Coulomb field scattering has a weaker effect on the electron drift mobility in AlN/GaN-based devices.

  1. An Evaluation of Antarctica as a Calibration Target for Passive Microwave Satellite Missions

    Science.gov (United States)

    Kim, Edward

    2012-01-01

    Passive microwave remote sensing at L-band (1.4 GHz) is sensitive to soil moisture and sea surface salinity, both important climate variables. Science studies involving these variables can now take advantage of new satellite L-band observations. The first mission with regular global passive microwave observations at L-band is the European Space Agency's Soil Moisture and Ocean Salinity (SMOS), launched November, 2009. A second mission, NASA's Aquarius, was launched June, 201l. A third mission, NASA's Soil Moisture Active Passive (SMAP) is scheduled to launch in 2014. Together, these three missions may provide a decade-long data record -- provided that they are intercalibrated. The intercalibration is best performed at the radiance (brightness temperature) level, and Antarctica is proving to be a key calibration target. However, Antarctica has thus far not been fully characterized as a potential target. This paper will present evaluations of Antarctica as a microwave calibration target for the above satellite missions. Preliminary analyses have identified likely target areas, such as the vicinity of Dome-C and larger areas within East Antarctica. Physical sources of temporal and spatial variability of polar firn are key to assessing calibration uncertainty. These sources include spatial variability of accumulation rate, compaction, surface characteristics (dunes, micro-topography), wind patterns, and vertical profiles of density and temperature. Using primarily SMOS data, variability is being empirically characterized and attempts are being made to attribute observed variability to physical sources. One expected outcome of these studies is the potential discovery of techniques for remotely sensing--over all of Antarctica--parameters such as surface temperature.

  2. Passivity-based control and estimation in networked robotics

    CERN Document Server

    Hatanaka, Takeshi; Fujita, Masayuki; Spong, Mark W

    2015-01-01

    Highlighting the control of networked robotic systems, this book synthesizes a unified passivity-based approach to an emerging cross-disciplinary subject. Thanks to this unified approach, readers can access various state-of-the-art research fields by studying only the background foundations associated with passivity. In addition to the theoretical results and techniques,  the authors provide experimental case studies on testbeds of robotic systems  including networked haptic devices, visual robotic systems,  robotic network systems and visual sensor network systems. The text begins with an introduction to passivity and passivity-based control together with the other foundations needed in this book. The main body of the book consists of three parts. The first examines how passivity can be utilized for bilateral teleoperation and demonstrates the inherent robustness of the passivity-based controller against communication delays. The second part emphasizes passivity’s usefulness for visual feedback control ...

  3. Thermal analysis and design of passive solar buildings

    CERN Document Server

    Athienitis, AK

    2013-01-01

    Passive solar design techniques are becoming increasingly important in building design. This design reference book takes the building engineer or physicist step-by-step through the thermal analysis and design of passive solar buildings. In particular it emphasises two important topics: the maximum utilization of available solar energy and thermal storage, and the sizing of an appropriate auxiliary heating/cooling system in conjunction with good thermal control.Thermal Analysis and Design of Passive Solar Buildings is an important contribution towards the optimization of buildings as systems th

  4. Assimilation of the ESA CCI Soil Moisture ACTIVE and PASSIVE Product into the SURFEX Land Surface Model using the Ensemble Transform Kalman Filter

    Science.gov (United States)

    Blyverket, J.; Hamer, P.; Bertino, L.; Lahoz, W. A.

    2017-12-01

    The European Space Agency Climate Change Initiative for soil moisture (ESA CCI SM) was initiated in 2012 for a period of six years, the objective for this period was to produce the most complete and consistent global soil moisture data record based on both active and passive sensors. The ESA CCI SM products consist of three surface soil moisture datasets: The ACTIVE product and the PASSIVE product were created by fusing scatterometer and radiometer soil moisture data, respectively. The COMBINED product is a blended product based on the former two datasets. In this study we assimilate globally both the ACTIVE and PASSIVE product at a 25 km spatial resolution. The different satellite platforms have different overpass times, an observation is mapped to the hours 00.00, 06.00, 12.00 or 18.00 if it falls within a 3 hour window centred at these times. We use the SURFEX land surface model with the ISBA diffusion scheme for the soil hydrology. For the assimilation routine we apply the Ensemble Transform Kalman Filter (ETKF). The land surface model is driven by perturbed MERRA-2 atmospheric forcing data, which has a temporal resolution of one hour and is mapped to the SURFEX model grid. Bias between the land surface model and the ESA CCI product is removed by cumulative distribution function (CDF) matching. This work is a step towards creating a global root zone soil moisture product from the most comprehensive satellite surface soil moisture product available. As a first step we consider the period from 2010 - 2016. This allows for comparison against other global root zone soil moisture products (SMAP Level 4, which is independent of the ESA CCI SM product).

  5. Corrosion principles and surface modification

    International Nuclear Information System (INIS)

    Kruger, J.

    1982-01-01

    This chapter examines the important strategies provided by the newer ideas of corrosion science and engineering that surface modification techniques must utilize to help prevent corrosion, especially the most damaging kind of aqueous corrosion, localized corrosion. Provides a brief introduction to the principles underlying the phenomenon of corrosion in order to use them to discuss surface modification strategies to combat corrosion. Discusses the electrochemistry of corrosion; the thermodynamics of corrosion; the kinetics of corrosion; thermodynamic strategies; and kinetic strategies (formation of more protective passive films; resistance to breakdown; ductility; repassivation)

  6. Passive behaviour of alloy corrosion-resistant steel Cr10Mo1 in simulating concrete pore solutions with different pH

    International Nuclear Information System (INIS)

    Ai, Zhiyong; Jiang, Jinyang; Sun, Wei; Song, Dan; Ma, Han; Zhang, Jianchun; Wang, Danqian

    2016-01-01

    Highlights: • A new alloy corrosion-resistant steel Cr10Mo1 is developed for reinforcing rebar of concrete in severe environments. • The effects of pH on the passive behaviour of Cr10Mo1 steel compared with plain carbon steel were studied systematically by electrochemical techniques and surface analysis. • The mechanism for self-reinforcing passivity against carbonation of the corrosion-resistant steel is revealed. - Abstract: The passive behaviour of new alloy corrosion-resistant steel Cr10Mo1 and plain carbon steel (as a comparison) in simulating concrete pore solutions of different pH (ranging from 13.5 to 9.0) under open circuit potential conditions, was evaluated by various electrochemical techniques: potentiodynamic polarization, capacitance measurements and electrochemical impedance spectroscopy. The chemical composition and structure of passive films were investigated by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The electrochemical responses of passive films show that Cr10Mo1 steel has an increasing passivity with pH decreasing while carbon steel dose conversely, revealing carbonation does no negative effect on passivation of the corrosion-resistant steel. SIMS reveals that the passive film on the corrosion-resistant steel presents a bilayer structure: an outer layer mainly consisting of Fe oxides and hydroxides, and an inner layer enriched in Cr species, while only a Fe-concentrated layer for carbon steel. According to the XPS analysis results, as the pH decreases, more stable and protective Cr oxides are enriched in the film on Cr10Mo1 steel while Fe oxides gradually decompose. Higher content of Cr oxides in the film layer provides Cr10Mo1 corrosion-resistant steel more excellent passivity at lower pH.

  7. Passive behaviour of alloy corrosion-resistant steel Cr10Mo1 in simulating concrete pore solutions with different pH

    Energy Technology Data Exchange (ETDEWEB)

    Ai, Zhiyong, E-mail: 230139452@seu.edu.cn [School of Materials Science and Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Jiangsu Key Laboratory of Construction Materials, Nanjing 211189, Jiangsu (China); Jiang, Jinyang, E-mail: jiangjinyang16@163.com [School of Materials Science and Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Jiangsu Key Laboratory of Construction Materials, Nanjing 211189, Jiangsu (China); Sun, Wei, E-mail: sunwei@seu.edu.cn [School of Materials Science and Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Jiangsu Key Laboratory of Construction Materials, Nanjing 211189, Jiangsu (China); Song, Dan, E-mail: songdancharls@hhu.edu.cn [School of Materials Science and Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Jiangsu Key Laboratory of Construction Materials, Nanjing 211189, Jiangsu (China); College of Mechanics and Materials, Hohai University, Nanjing 210098, Jiangsu (China); Ma, Han, E-mail: mahan-iris@shasteel.cn [Research Institute of Jiangsu Shasteel Iron and Steel, Zhangjiagang 215625, Jiangsu (China); Zhang, Jianchun, E-mail: Zhangjc-iris@shasteel.cn [Research Institute of Jiangsu Shasteel Iron and Steel, Zhangjiagang 215625, Jiangsu (China); Wang, Danqian, E-mail: wonderbaba@126.com [School of Materials Science and Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Jiangsu Key Laboratory of Construction Materials, Nanjing 211189, Jiangsu (China)

    2016-12-15

    Highlights: • A new alloy corrosion-resistant steel Cr10Mo1 is developed for reinforcing rebar of concrete in severe environments. • The effects of pH on the passive behaviour of Cr10Mo1 steel compared with plain carbon steel were studied systematically by electrochemical techniques and surface analysis. • The mechanism for self-reinforcing passivity against carbonation of the corrosion-resistant steel is revealed. - Abstract: The passive behaviour of new alloy corrosion-resistant steel Cr10Mo1 and plain carbon steel (as a comparison) in simulating concrete pore solutions of different pH (ranging from 13.5 to 9.0) under open circuit potential conditions, was evaluated by various electrochemical techniques: potentiodynamic polarization, capacitance measurements and electrochemical impedance spectroscopy. The chemical composition and structure of passive films were investigated by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The electrochemical responses of passive films show that Cr10Mo1 steel has an increasing passivity with pH decreasing while carbon steel dose conversely, revealing carbonation does no negative effect on passivation of the corrosion-resistant steel. SIMS reveals that the passive film on the corrosion-resistant steel presents a bilayer structure: an outer layer mainly consisting of Fe oxides and hydroxides, and an inner layer enriched in Cr species, while only a Fe-concentrated layer for carbon steel. According to the XPS analysis results, as the pH decreases, more stable and protective Cr oxides are enriched in the film on Cr10Mo1 steel while Fe oxides gradually decompose. Higher content of Cr oxides in the film layer provides Cr10Mo1 corrosion-resistant steel more excellent passivity at lower pH.

  8. Effect of Cr on the passive film formation mechanism of steel rebar in saturated calcium hydroxide solution

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Ming; Cheng, Xuequn [Corrosion and Protection Center, University of Science and Technology Beijing, Beijing, 100083 (China); Li, Xiaogang, E-mail: lixiaogang@ustb.edu.cn [Corrosion and Protection Center, University of Science and Technology Beijing, Beijing, 100083 (China); Ningbo Institute of Material Technology & Engineering, Chinese Academy of Sciences, Ningbo, 315201, Zhejiang (China); Pan, Yue; Li, Jun [Corrosion and Protection Center, University of Science and Technology Beijing, Beijing, 100083 (China)

    2016-12-15

    Highlights: • Cr inhibits the formation of passive film at the beginning of its formation. • Cr promotes the formation of a denser and more compact passive film. • The passive film thickness presents a slight increase as the content of Cr goes up. - Abstract: Passive films grow on the surface of Cr-modified steels subjected to saturated Ca(OH){sub 2} solution. Electrochemical techniques, such as measurement of open circuit potentials, polarization curves, and electrochemical impedance spectroscopy combined with X-ray photoelectron spectrometer and auger electron spectroscopy, were applied to study the influence of low Cr content on the passive film formation mechanism of steel rebar in saturated Ca(OH){sub 2} solution. Results show that Cr inhibits the formation of passive film at the beginning of its formation. Corrosion current density decreases and polarization resistance increases with the extension of the immersion time. A stable passive film takes at least three days to form. The passive film resistance of HRB400 carbon steel is higher than that of Cr-modified steels in the early stage of immersion (<72 h). The polarization resistance of Cr-modified steel is larger after a stable passive film is formed (>72 h), and Cr promotes the formation of a denser and more compact passive film. The stable passive film is primarily made up of iron oxides with a thickness of 5–6 nm. Cr are involved in the formation of passive films, thereby resulting in a film that consists of an inner layer that contains Cr–Fe oxides and an outer layer that contains Fe oxides, whose thickness presents a slight increase as the content of Cr increases.

  9. Enhanced photoelectrocatalytic performance of α-Fe2O3 thin films by surface plasmon resonance of Au nanoparticles coupled with surface passivation by atom layer deposition of Al2O3.

    Science.gov (United States)

    Liu, Yuting; Xu, Zhen; Yin, Min; Fan, Haowen; Cheng, Weijie; Lu, Linfeng; Song, Ye; Ma, Jing; Zhu, Xufei

    2015-12-01

    The short lifetime of photogenerated charge carriers of hematite (α-Fe2O3) thin films strongly hindered the PEC performances. Herein, α-Fe2O3 thin films with surface nanowire were synthesized by electrodeposition and post annealing method for photoelectrocatalytic (PEC) water splitting. The thickness of the α-Fe2O3 films can be precisely controlled by adjusting the duration of the electrodeposition. The Au nanoparticles (NPs) and Al2O3 shell by atom layer deposition were further introduced to modify the photoelectrodes. Different constructions were made with different deposition orders of Au and Al2O3 on Fe2O3 films. The Fe2O3-Au-Al2O3 construction shows the best PEC performance with 1.78 times enhancement by localized surface plasmon resonance (LSPR) of NPs in conjunction with surface passivation of Al2O3 shells. Numerical simulation was carried out to investigate the promotion mechanisms. The high PEC performance for Fe2O3-Au-Al2O3 construction electrode could be attributed to the Al2O3 intensified LSPR, effective surface passivation by Al2O3 coating, and the efficient charge transfer due to the Fe2O3-Au Schottky junctions.

  10. XPS and electrochemical studies of the dissolution and passivation of molybdenum-implanted austenitic stainless steels

    International Nuclear Information System (INIS)

    De Vito, E.; Marcus, P.

    1993-01-01

    X-ray Photoelectron Spectroscopy (XPS) was used to investigate the chemical composition and the chemical states of the passive film formed on austenitic stainless steels (Fe-19Cr-10Ni (at.%)) which have been implanted with molybdenum (Mo + , 100 keV, 2.5 x 10 16 at./cm 2 ). Prior to passivation the implanted alloy was characterized by RBS (Rutherford Backscattering Spectroscopy) and XPS. Alloys with well-defined surface concentrations of molybdenum were prepared by ion sputtering the implanted alloy in the preparation chamber of the spectrometer, to a fixed point in the implantation profile. The samples were then transferred without air exposure to a glove box with inert gas in which the electrochemical measurements were performed. After passivation, return transfer of the passivated samples was done with the same transfer device to avoid exposure to air. In 0.5 M H 2 SO 4 , the anodic dissolution current density decreases with increasing Mo content on the alloy surface. Surface analysis by XPS showed that the surface is enriched with molybdenum in the Mo 4+ chemical state. The current density in the passive state is similar for both the non-implanted and the implanted alloys. Surface analysis by XPS showed that the passive film has a bilayer structure (inner oxide and outer hydroxide) and that the hydroxide layer present on the surface of the passive film is markedly enriched with molybdenum in the Mo 6+ chemical state. The XPS measurements indicate that the presence of molybdenum favors the formation of chromium hydroxide at the expense of chromium oxide. A significant enrichment of the alloyed (Cr, Ni) and implanted (Mo) elements was also observed in the metallic phase under the passive film. The possible mechanisms of the effect of molybdenum on the corrosion resistance of stainless steels are discussed in light of the obtained surface analytical results

  11. Molecular Monolayers for Electrical Passivation and Functionalization of Silicon-Based Solar Energy Devices.

    Science.gov (United States)

    Veerbeek, Janneke; Firet, Nienke J; Vijselaar, Wouter; Elbersen, Rick; Gardeniers, Han; Huskens, Jurriaan

    2017-01-11

    Silicon-based solar fuel devices require passivation for optimal performance yet at the same time need functionalization with (photo)catalysts for efficient solar fuel production. Here, we use molecular monolayers to enable electrical passivation and simultaneous functionalization of silicon-based solar cells. Organic monolayers were coupled to silicon surfaces by hydrosilylation in order to avoid an insulating silicon oxide layer at the surface. Monolayers of 1-tetradecyne were shown to passivate silicon micropillar-based solar cells with radial junctions, by which the efficiency increased from 8.7% to 9.9% for n + /p junctions and from 7.8% to 8.8% for p + /n junctions. This electrical passivation of the surface, most likely by removal of dangling bonds, is reflected in a higher shunt resistance in the J-V measurements. Monolayers of 1,8-nonadiyne were still reactive for click chemistry with a model catalyst, thus enabling simultaneous passivation and future catalyst coupling.

  12. Development of computational technique for labeling magnetic flux-surfaces

    International Nuclear Information System (INIS)

    Nunami, Masanori; Kanno, Ryutaro; Satake, Shinsuke; Hayashi, Takaya; Takamaru, Hisanori

    2006-03-01

    In recent Large Helical Device (LHD) experiments, radial profiles of ion temperature, electric field, etc. are measured in the m/n=1/1 magnetic island produced by island control coils, where m is the poloidal mode number and n the toroidal mode number. When the transport of the plasma in the radial profiles is numerically analyzed, an average over a magnetic flux-surface in the island is a very useful concept to understand the transport. On averaging, a proper labeling of the flux-surfaces is necessary. In general, it is not easy to label the flux-surfaces in the magnetic field with the island, compared with the case of a magnetic field configuration having nested flux-surfaces. In the present paper, we have developed a new computational technique to label the magnetic flux-surfaces. This technique is constructed by using an optimization algorithm, which is known as an optimization method called the simulated annealing method. The flux-surfaces are discerned by using two labels: one is classification of the magnetic field structure, i.e., core, island, ergodic, and outside regions, and the other is a value of the toroidal magnetic flux. We have applied the technique to an LHD configuration with the m/n=1/1 island, and successfully obtained the discrimination of the magnetic field structure. (author)

  13. Self-cleaning Foliar Surfaces Characterization using RIMAPS Technique and Variogram Method

    International Nuclear Information System (INIS)

    Rosi, Pablo E.

    2002-01-01

    Along the last ten years many important studies about characterization of self-cleaning foliar surfaces have been done and focused new interest on this kind of surfaces.These studies were possible due to the development of a novel preparation technique for this biological material that let us observe the delicate structures of a foliar surface under scanning electron microscope (S.E.M.).This technique consists of replacing the natural water of the specimen by glycerol. Digital S.E.M. images from both self-cleaning and non-self-cleaning foliar surfaces were obtained and analyzed using RIMAPS technique and Variograms method. Our results revealed the existence of a common and exclusive geometrical pattern that is found in species which present self-cleaning foliar surfaces.This pattern combines at least nine different directions.The results from the Variograms method showed that the stomata play a key role in the determination of foliar surface roughness. In addition, spectra from RIMAPS technique constitute a fingerprint of a foliar surface so they can be used to find evolutionary relationships among species.Further studies will provide more detailed information to fully elucidate the self-cleaning pattern, so it might be possible to reproduce it on an artificial surface and make it self-cleaning

  14. Passive solar design strategies: Remodeling guidelines for conserving energy at home. [Final report

    Energy Technology Data Exchange (ETDEWEB)

    1991-12-31

    The idea of passive solar is simple, but applying it effectively does require information and attention to the details of design and construction. Some passive solar techniques are modest and low-cost, and require only small changes in remodeler`s typical practice. At the other end of the spectrum, some passive solar systems can almost eliminate a house`s need for purchased heating (and in some cases, cooling) energy -- but probably at a relatively high first cost. In between are a broad range of energy-conserving passive solar techniques. Whether or not they are cost-effective, practical and attractive enough to offer a market advantage to any individual remodeler depends on very specific factors such as local costs, climate, and market characteristics. Passive solar design strategies: Remodeling Guidelines For Conserving Energy At Homes is written to help give remodelers the information they need to make these decisions. Passive Solar Design Strategies is a package in three basic parts: The Guidelines contain information about passive solar techniques and how they work, and provides specific examples of systems which will save various percentages of energy; The Worksheets offer a simple, fill-in-the-blank method to pre-evaluate the performance of a specific design; The Worked Example demonstrates how to complete the worksheets for a typical residence.

  15. Evaluation of a Simple, Small-Plot Meteorological Technique for Measurement of Ammonia Emission: Feasibility, Costs, and Recommendations

    DEFF Research Database (Denmark)

    Pedersen, Simon Vilms; di Perta, Ester Scotto; Hafner, Sasha D.

    2018-01-01

    are regularly developed, and their efficacy needs to be tested using accurate methods. To date, a major obstacle to many available emission measurement techniques is the requirement of large plot sizes of homogeneous surface characteristics, which particularly is a challenge to the number of plot......-level replicates that can be carried out on a field providing uniform surface characteristics throughout. The objectives of this research were to test three different methods for measuring NH3 flux when applied to small plots (methods and to determine...... techniques, wind tunnels measuring gas-phase ammonia using ALPHA passive diffusion samplers and a flux chamber method using Dräger tubes for measurements of ammonia concentration (DTM) were used. As an inexpensive alternative small-plot method, we studied the feasibility of applying ALPHA passive diffusion...

  16. Nuclear techniques for bulk and surface analysis of materials

    International Nuclear Information System (INIS)

    D'Agostino, M.D.; Kamykowski, E.A.; Kuehne, F.J.; Padawer, G.M.; Schneid, E.J.; Schulte, R.L.; Stauber, M.C.; Swanson, F.R.

    1978-01-01

    A review is presented summarizing several nondestructive bulk and surface analysis nuclear techniques developed in the Grumman Research Laboratories. Bulk analysis techniques include 14-MeV-neutron activation analysis and accelerator-based neutron radiography. The surface analysis techniques include resonant and non-resonant nuclear microprobes for the depth profile analysis of light elements (H, He, Li, Be, C, N, O and F) in the surface of materials. Emphasis is placed on the description and discussion of the unique nuclear microprobe analytical capacibilities of immediate importance to a number of current problems facing materials specialists. The resolution and contrast of neutron radiography was illustrated with an operating heat pipe system. The figure shows that the neutron radiograph has a resolution of better than 0.04 cm with sufficient contrast to indicate Freon 21 on the inner capillaries of the heat pipe and pooling of the liquid at the bottom. (T.G.)

  17. Optimization of freeform surfaces using intelligent deformation techniques for LED applications

    Science.gov (United States)

    Isaac, Annie Shalom; Neumann, Cornelius

    2018-04-01

    For many years, optical designers have great interests in designing efficient optimization algorithms to bring significant improvement to their initial design. However, the optimization is limited due to a large number of parameters present in the Non-uniform Rationaly b-Spline Surfaces. This limitation was overcome by an indirect technique known as optimization using freeform deformation (FFD). In this approach, the optical surface is placed inside a cubical grid. The vertices of this grid are modified, which deforms the underlying optical surface during the optimization. One of the challenges in this technique is the selection of appropriate vertices of the cubical grid. This is because these vertices share no relationship with the optical performance. When irrelevant vertices are selected, the computational complexity increases. Moreover, the surfaces created by them are not always feasible to manufacture, which is the same problem faced in any optimization technique while creating freeform surfaces. Therefore, this research addresses these two important issues and provides feasible design techniques to solve them. Finally, the proposed techniques are validated using two different illumination examples: street lighting lens and stop lamp for automobiles.

  18. Photoreflectance and Raman Study of Surface Electric States on AlGaAs/GaAs Heterostructures

    Directory of Open Access Journals (Sweden)

    Luis Zamora-Peredo

    2016-01-01

    Full Text Available Photoreflectance (PR and Raman are two very useful spectroscopy techniques that usually are used to know the surface electronic states in GaAs-based semiconductor devices. However, although they are exceptional tools there are few reports where both techniques were used in these kinds of devices. In this work, the surface electronic states on AlGaAs/GaAs heterostructures were studied in order to identify the effect of factors like laser penetration depth, cap layer thickness, and surface passivation over PR and Raman spectra. PR measurements were performed alternately with two lasers (532 nm and 375 nm wavelength as the modulation sources in order to identify internal and surface features. The surface electric field calculated by PR analysis decreased whereas the GaAs cap layer thickness increased, in good agreement with a similar behavior observed in Raman measurements (IL-/ILO ratio. When the heterostructures were treated by Si-flux, these techniques showed contrary behaviors. PR analysis revealed a diminution in the surface electric field due to a passivation process whereas the IL-/ILO ratio did not present the same behavior because it was dominated by the depletion layers width (cap layer thickness and the laser penetration depth.

  19. Wireless SAW passive tag temperature measurement in the collision case

    Science.gov (United States)

    Sorokin, A.; Shepeta, A.; Wattimena, M.

    2018-04-01

    This paper describes temperature measurement in the multisensor systems based on the radio-frequency identification SAW passive tags which are currently applied in the electric power systems and the switchgears. Different approaches of temperature measurement in the collision case are shown here. The study is based on the tag model with specific topology, which allows us to determine temperature through the response signal with time-frequency information. This research considers the collision case for several passive tags as the temperature sensors which are placed in the switchgear. This research proposal is to analyze the possibility of using several SAW passive sensors in the collision case. We consider the using of the different typical elements for passive surface acoustic wave tag which applies as an anticollision passive sensor. These wireless sensors based on the surface acoustic waves tags contain specifically coded structures. This topology makes possible the reliability of increasing tag identification and the temperature measurement in the collision case. As the results for this case we illustrate simultaneous measurement of at least six sensors.

  20. Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors

    Science.gov (United States)

    Hu, Yaoqiao; San Yip, Pak; Tang, Chak Wah; Lau, Kei May; Li, Qiang

    2018-04-01

    Layered semiconductor molybdenum disulfide (MoS2) has recently emerged as a promising material for flexible electronic and optoelectronic devices because of its finite bandgap and high degree of gate control. Here, we report a hydrogen fluoride (HF) passivation technique for improving the carrier mobility and interface quality of chemical vapor deposited monolayer MoS2 on a SiO2/Si substrate. After passivation, the fabricated MoS2 back-gate transistors demonstrate a more than double improvement in average electron mobility, a reduced gate hysteresis gap of 3 V, and a low interface trapped charge density of ˜5.8 × 1011 cm-2. The improvements are attributed to the satisfied interface dangling bonds, thus a reduction of interface trap states and trapped charges. Surface x-ray photoelectron spectroscopy analysis and first-principles simulation were performed to verify the HF passivation effect. The results here highlight the necessity of a MoS2/dielectric passivation strategy and provides a viable route for enhancing the performance of MoS2 nano-electronic devices.

  1. Damage detection and isolation via autocorrelation: a step toward passive sensing

    Science.gov (United States)

    Chang, Y. S.; Yuan, F. G.

    2018-03-01

    Passive sensing technique may eliminate the need of expending power from actuators and thus provide a means of developing a compact and simple structural health monitoring system. More importantly, it may provide a solution for monitoring the aircraft subjected to environmental loading from air flow during operation. In this paper, a non-contact auto-correlation based technique is exploited as a feasibility study for passive sensing application to detect damage and isolate the damage location. Its theoretical basis bears some resemblance to reconstructing Green's function from diffusive wavefield through cross-correlation. Localized high pressure air from air compressor are randomly and continuously applied on the one side surface of the aluminum panels through the air blow gun. A laser Doppler vibrometer (LDV) was used to scan a 90 mm × 90 mm area to create a 6 × 6 2D-array signals from the opposite side of the panels. The scanned signals were auto-correlated to reconstruct a "selfimpulse response" (or Green's function). The premise for stably reconstructing the accurate Green's function requires long sensing times. For a 609.6 mm × 609.6 mm flat aluminum panel, the sensing times roughly at least four seconds is sufficient to establish converged Green's function through correlation. For the integral stiffened aluminum panel, the geometrical features of the panel expedite the formation of the diffusive wavefield and thus shorten the sensing times. The damage is simulated by gluing a magnet onto the panels. Reconstructed Green's functions (RGFs) are used for damage detection and damage isolation based on an imaging condition with mean square deviation of the RGFs from the pristine and the damaged structure and the results are shown in color maps. The auto-correlation based technique is shown to consistently detect the simulated damage, image and isolate the damage in the structure subjected to high pressure air excitation. This technique may be transformed into

  2. AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique.

    Science.gov (United States)

    Liu, Xiao-Yong; Zhao, Sheng-Xun; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Zhang, Chun-Min; Lu, Hong-Liang; Wang, Peng-Fei; Zhang, David Wei

    2015-01-01

    Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is presented. This technique features the AlN thin film grown by thermal ALD at 400°C without plasma enhancement. A 10.6-nm AlN thin film was grown upon the surface of the HEMT serving as the gate dielectric under the gate electrode and as the passivation layer in the access region at the same time. The MISHEMTs with thermal ALD AlN exhibit enhanced on/off ratio, reduced channel sheet resistance, reduction of gate leakage by three orders of magnitude at a bias of 4 V, reduced threshold voltage hysteresis of 60 mV, and suppressed current collapse degradation.

  3. Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

    International Nuclear Information System (INIS)

    Gassoumi, Malek; Mosbahi, Hana; Zaidi, Mohamed Ali; Gaquiere, Christophe; Maaref, Hassen

    2013-01-01

    Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO 2 passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO 2 film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device

  4. Techniques of surface optical breakdown prevention for low-depths femtosecond waveguides writing

    International Nuclear Information System (INIS)

    Bukharin, M A; Skryabin, N N; Ganin, D V; Khudyakov, D V; Vartapetov, S.K.

    2016-01-01

    We demonstrated technique of direct femtosecond waveguide writing at record low depth (2-15 μm) under surface of lithium niobate, that play a key role in design of electrooptical modulators with low operating voltage. To prevent optical breakdown of crystal surface we used high numerical aperture objectives for focusing of light and non-thermal regime of inscription in contrast to widespread femtosecond writing technique at depths of tens micrometers or higher. Surface optical breakdown threshold was measured for both x- and z- cut crystals. Inscribed waveguides were examined for intrinsic microstructure. It also reported sharp narrowing of operating pulses energy range with writing depth under the surface of crystal, that should be taken in account when near-surface waveguides design. Novelty of the results consists in reduction of inscription depth under the surface of crystals that broadens applications of direct femtosecond writing technique to full formation of near-surface waveguides and postproduction precise geometry correction of near-surfaces optical integrated circuits produced with proton-exchanged technique. (paper)

  5. Reliability assessment of passive containment isolation system using APSRA methodology

    International Nuclear Information System (INIS)

    Nayak, A.K.; Jain, Vikas; Gartia, M.R.; Srivastava, A.; Prasad, Hari; Anthony, A.; Gaikwad, A.J.; Bhatia, S.; Sinha, R.K.

    2008-01-01

    In this paper, a methodology known as APSRA (Assessment of Passive System ReliAbility) has been employed for evaluation of the reliability of passive systems. The methodology has been applied to the passive containment isolation system (PCIS) of the Indian advanced heavy water reactor (AHWR). In the APSRA methodology, the passive system reliability evaluation is based on the failure probability of the system to carryout the desired function. The methodology first determines the operational characteristics of the system and the failure conditions by assigning a predetermined failure criterion. The failure surface is predicted using a best estimate code considering deviations of the operating parameters from their nominal states, which affect the PCIS performance. APSRA proposes to compare the code predictions with the test data to generate the uncertainties on the failure parameter prediction, which is later considered in the code for accurate prediction of failure surface of the system. Once the failure surface of the system is predicted, the cause of failure is examined through root diagnosis, which occurs mainly due to failure of mechanical components. The failure probability of these components is evaluated through a classical PSA treatment using the generic data. The reliability of the PCIS is evaluated from the probability of availability of the components for the success of the passive containment isolation system

  6. Analysis on Target Detection and Classification in LTE Based Passive Forward Scattering Radar

    Directory of Open Access Journals (Sweden)

    Raja Syamsul Azmir Raja Abdullah

    2016-09-01

    Full Text Available The passive bistatic radar (PBR system can utilize the illuminator of opportunity to enhance radar capability. By utilizing the forward scattering technique and procedure into the specific mode of PBR can provide an improvement in target detection and classification. The system is known as passive Forward Scattering Radar (FSR. The passive FSR system can exploit the peculiar advantage of the enhancement in forward scatter radar cross section (FSRCS for target detection. Thus, the aim of this paper is to show the feasibility of passive FSR for moving target detection and classification by experimental analysis and results. The signal source is coming from the latest technology of 4G Long-Term Evolution (LTE base station. A detailed explanation on the passive FSR receiver circuit, the detection scheme and the classification algorithm are given. In addition, the proposed passive FSR circuit employs the self-mixing technique at the receiver; hence the synchronization signal from the transmitter is not required. The experimental results confirm the passive FSR system’s capability for ground target detection and classification. Furthermore, this paper illustrates the first classification result in the passive FSR system. The great potential in the passive FSR system provides a new research area in passive radar that can be used for diverse remote monitoring applications.

  7. Analysis on Target Detection and Classification in LTE Based Passive Forward Scattering Radar.

    Science.gov (United States)

    Raja Abdullah, Raja Syamsul Azmir; Abdul Aziz, Noor Hafizah; Abdul Rashid, Nur Emileen; Ahmad Salah, Asem; Hashim, Fazirulhisyam

    2016-09-29

    The passive bistatic radar (PBR) system can utilize the illuminator of opportunity to enhance radar capability. By utilizing the forward scattering technique and procedure into the specific mode of PBR can provide an improvement in target detection and classification. The system is known as passive Forward Scattering Radar (FSR). The passive FSR system can exploit the peculiar advantage of the enhancement in forward scatter radar cross section (FSRCS) for target detection. Thus, the aim of this paper is to show the feasibility of passive FSR for moving target detection and classification by experimental analysis and results. The signal source is coming from the latest technology of 4G Long-Term Evolution (LTE) base station. A detailed explanation on the passive FSR receiver circuit, the detection scheme and the classification algorithm are given. In addition, the proposed passive FSR circuit employs the self-mixing technique at the receiver; hence the synchronization signal from the transmitter is not required. The experimental results confirm the passive FSR system's capability for ground target detection and classification. Furthermore, this paper illustrates the first classification result in the passive FSR system. The great potential in the passive FSR system provides a new research area in passive radar that can be used for diverse remote monitoring applications.

  8. Visualization of brain surface structures by weighted summation technique using multislice MR images

    International Nuclear Information System (INIS)

    Machida, Yoshio; Hatanaka, Masahiko; Hagiwara, Masayuki; Sugimoto, Hiroshi; Yoshida, Tadatoki; Katada, Kazuhiro.

    1991-01-01

    Surface anatomy scanning (SAS) technique which visualizes brain surface structures has been developed since 1987. In this paper, we propose a modified method called 'multislice SAS', which also generates such surface structure images, and has several advantages compared with conventional SAS technique. The conventional SAS technique uses a very long echo time sequence (e.g. SE(3000, 250)) with a thick slice and a surface coil to enhance CSF on the brain surface. Our modified technique also uses a long echo time sequence. But, added multislice images, each appropriately weighted, are used in stead of a thick slice and a surface coil. Our basic studies have shown that this modified method has the following advantage: Several surface images with slightly different summation directions are obtained, and they are used for stereographic display and cine display. This is very useful for visualizing the spatial relationship of brain surface structures. By choosing appropriate weighting, we can obtain clinically legible surface images. This technique dose not require a surface coil. It means that flexibility of selecting imaging direction is high. We can make a lot of modifications, because the original multislice images of weighted summation are arbitrary. And we also clarify some limitation or disadvantage of this modified method. In conclusion, we think that this technique is one of the practical approaches for surface anatomy imaging. (author)

  9. Engineered Multifunctional Surfaces for Fluid Handling

    Science.gov (United States)

    Thomas, Chris; Ma, Yonghui; Weislogel, Mark

    2012-01-01

    Designs incorporating variations in capillary geometry and hydrophilic and/or antibacterial surface properties have been developed that are capable of passive gas/liquid separation and passive water flow. These designs can incorporate capillary grooves and/or surfaces arranged to create linear and circumferential capillary geometry at the micro and macro scale, radial fin configurations, micro holes and patterns, and combinations of the above. The antibacterial property of this design inhibits the growth of bacteria or the development of biofilm. The hydrophilic property reduces the water contact angle with a treated substrate such that water spreads into a thin layer atop the treated surface. These antibacterial and hydrophilic properties applied to a thermally conductive surface, combined with capillary geometry, create a novel heat exchanger capable of condensing water from a humid, two-phase water and gas flow onto the treated heat exchanger surfaces, and passively separating the condensed water from the gas flow in a reduced gravity application. The overall process to generate the antibacterial and hydrophilic properties includes multiple steps to generate the two different surface properties, and can be divided into two major steps. Step 1 uses a magnetron-based sputtering technique to implant the silver atoms into the base material. A layer of silver is built up on top of the base material. Completion of this step provides the antibacterial property. Step 2 uses a cold-plasma technique to generate the hydrophilic surface property on top of the silver layer generated in Step 1. Completion of this step provides the hydrophilic property in addition to the antibacterial property. Thermally conductive materials are fabricated and then treated to create the antibacterial and hydrophilic surface properties. The individual parts are assembled to create a condensing heat exchanger with antibacterial and hydrophilic surface properties and capillary geometry, which is

  10. Passivation behavior of AB{sub 5}-type hydrogen storage alloys for battery electrode application

    Energy Technology Data Exchange (ETDEWEB)

    Meli, F. [Fribourg Univ. (Switzerland). Inst. de Physique; Sakai, T. [Fribourg Univ. (Switzerland). Inst. de Physique; Zuettel, A. [Fribourg Univ. (Switzerland). Inst. de Physique; Schlapbach, L. [Fribourg Univ. (Switzerland). Inst. de Physique

    1995-04-15

    In many applications, AB{sub 5} type hydrogen storage alloys show passivation behavior, i.e. when fully discharged, metal hydride electrodes show (especially at higher temperatures) a decrease in activity and therefore a decrease in capacity at normal discharge currents for ensuing cycles. Passivation may continue to the point where activity becomes so low that the capacity is no longer accessible. Electrochemical measurements were taken of two different AB{sub 5}-type alloys, one with manganese and one without manganese (LaNi{sub 3.4}Co{sub 1.2}Al{sub 0.4} and LaNi{sub 3.4}Co{sub 1.2}Al{sub 0.3}Mn{sub 0.1}). Both alloys showed passivation behavior after remaining in the discharged state. The alloy with manganese showed a stronger tendency to passivation which is in contradiction with earlier observations. Photoelectron spectroscopic analysis together with sputter depth profiling was used to investigate the surface composition of samples which had undergone different surface pretreatments. Surface analysis of electrodes in the passivated state shows a lower content of metallic nickel and a thicker nickel surface oxide film. We attribute the low electrochemical kinetics of the alloys after passivation to the loss of metallic nickel and/or cobalt at the electrode-electrolyte interface. ((orig.))

  11. Surface analytical techniques applied to minerals processing

    International Nuclear Information System (INIS)

    Smart, R.St.C.

    1991-01-01

    An understanding of the chemical and physical forms of the chemically altered layers on the surfaces of base metal sulphides, particularly in the form of hydroxides, oxyhydroxides and oxides, and the changes that occur in them during minerals processing lies at the core of a complete description of flotation chemistry. This paper reviews the application of a variety of surface-sensitive techniques and methodologies applied to the study of surface layers on single minerals, mixed minerals, synthetic ores and real ores. Evidence from combined XPS/SAM/SEM studies have provided images and analyses of three forms of oxide, oxyhydroxide and hydroxide products on the surfaces of single sulphide minerals, mineral mixtures and complex sulphide ores. 4 refs., 2 tabs., 4 figs

  12. Passivity-Based Control of Electric Machines

    Energy Technology Data Exchange (ETDEWEB)

    Nicklasson, P.J.

    1996-12-31

    This doctoral thesis presents new results on the design and analysis of controllers for a class of electric machines. Nonlinear controllers are derived from a Lagrangian model representation using passivity techniques, and previous results on induction motors are improved and extended to Blondel-Park transformable machines. The relation to conventional techniques is discussed, and it is shown that the formalism introduced in this work facilitates analysis of conventional methods, so that open questions concerning these methods may be resolved. In addition, the thesis contains the following improvements of previously published results on the control of induction motors: (1) Improvement of a passivity-based speed/position controller, (2) Extension of passivity-based (observer-less and observer-based) controllers from regulation to tracking of rotor flux norm, (3) An extension of the classical indirect FOC (Field-Oriented Control) scheme to also include global rotor flux norm tracking, instead of only torque tracking and rotor flux norm regulation. The design is illustrated experimentally by applying the proposed control schemes to a squirrel-cage induction motor. The results show that the proposed methods have advantages over previous designs with respect to controller tuning, performance and robustness. 145 refs., 21 figs.

  13. Passive Wireless SAW Humidity Sensors, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal describes the preliminary development of passive wireless surface acoustic wave (SAW) based humidity sensors for NASA application to distributed...

  14. Passive Control of Flexible Structures by Confinement of Vibrations

    Directory of Open Access Journals (Sweden)

    M. Ouled Chtiba

    2007-01-01

    Full Text Available We propose a two-step strategy for the design of passive controllers for the simultaneous confinement and suppression of vibrations (SCSV in mechanical structures. Once the sensitive and insensitive elements of these structures are identified, the first design step synthesizes an active control law, which is referred to as the reference control law (RCL, for the SCSV. We show that the problem of SCSV can be formulated as an LQR-optimal control problem through which the maximum amplitudes, associated with the control input and the displacements of the sensitive and insensitive parts, can be regulated. In the second design step, a transformation technique that yields an equivalent passive controller is used. Such a technique uses the square root of sum of squares method to approximate an equivalent passive controller while maximizing the effects of springs and dampers characterizing passive elements that are added to the original structure. The viability of the proposed control design is illustrated using a three-DOF mechanical system subject to an excitation. It is assumed that all of the masses are sensitive to the excitation, and thus the vibratory energy must be confined in the added passive elements (insensitive parts. We show that the vibration amplitudes associated with the sensitive masses are attenuated at fast rate at the expense of slowing down the convergence of the passive elements to their steady states. It is also demonstrated that a combination of the RCL and the equivalent passive control strategy leads to similar structural performance.

  15. Self-consistent Green’s-function technique for surfaces and interfaces

    DEFF Research Database (Denmark)

    Skriver, Hans Lomholt; Rosengaard, N. M.

    1991-01-01

    We have implemented an efficient self-consistent Green’s-function technique for calculating ground-state properties of surfaces and interfaces, based on the linear-muffin-tin-orbitals method within the tight-binding representation. In this approach the interlayer interaction is extremely short...... ranged, and only a few layers close to the interface need be treated self-consistently via a Dyson equation. For semi-infinite jellium, the technique gives work functions and surface energies that are in excellent agreement with earlier calculations. For the bcc(110) surface of the alkali metals, we find...

  16. Inkjet Printed Radio Frequency Passive Components

    KAUST Repository

    McKerricher, Garret

    2015-12-01

    Inkjet printing is a mature technique for colourful graphic arts. It excels at customized, large area, high resolution, and small volume production. With the developments in conductive, and dielectric inks, there is potential for large area inkjet electronics fabrication. Passive radio frequency devices can benefit greatly from a printing process, since the size of these devices is defined by the frequency of operation. The large size of radio frequency passives means that they either take up expensive space “on chip” or that they are fabricated on a separate lower cost substrate and somehow bonded to the chips. This has hindered cost-sensitive high volume applications such as radio frequency identification tags. Substantial work has been undertaken on inkjet-printed conductors for passive antennas on microwave substrates and even paper, yet there has been little work on the printing of the dielectric materials aimed at radio frequency passives. Both the conductor and dielectric need to be integrated to create a multilayer inkjet printing process that is capable of making quality passives such as capacitors and inductors. Three inkjet printed dielectrics are investigated in this thesis: a ceramic (alumina), a thermal-cured polymer (poly 4 vinyl phenol), and a UV-cured polymer (acrylic based). For the conductor, both a silver nanoparticle ink as well as a custom in-house formulated particle-free silver ink are explored. The focus is on passives, mainly capacitors and inductors. Compared to low frequency electronics, radio frequency components have additional sensitivity regarding skin depth of the conductor and surface roughness, as well as dielectric constant and loss tangent of the dielectric. These concerns are investigated with the aim of making the highest quality components possible and to understand the current limitations of inkjet-fabricated radio frequency devices. An inkjet-printed alumina dielectric that provides quality factors of 200 and high

  17. Polydiagnostic calibration performed on a low pressure surface wave sustained argon plasma

    NARCIS (Netherlands)

    Vries, de N.; Palomares, J.M.; Iordanova, E.I.; Veldhuizen, van E.M.; Mullen, van der J.J.A.M.

    2008-01-01

    The electron density and electron temperature of a low pressure surface wave sustained argon plasma have been determined using passive and active (laser) spectroscopic methods simultaneously. In this way the validity of the various techniques is established while the plasma properties are determined

  18. The corrosion and passivity of sputtered Mg–Ti alloys

    International Nuclear Information System (INIS)

    Song, Guang-Ling; Unocic, Kinga A.; Meyer, Harry; Cakmak, Ercan; Brady, Michael P.; Gannon, Paul E.; Himmer, Phil; Andrews, Quinn

    2016-01-01

    Highlights: • A supersaturated single phase Mg–Ti alloy can be obtained by magnetron sputtering. • The anodic dissolution of Mg–Ti alloy is inhibited by Ti addition. • The alloy becomes passive when Ti content is high and the alloy has become Ti based. • The formation of a continuous thin passive film is responsible for the passivation of the alloy. - Abstract: This study explored the possibility of forming a “stainless” Mg–Ti alloy. The electrochemical behavior of magnetron-sputtered Mg–Ti alloys was measured in a NaCl solution, and the surface films on the alloys were examined by XPS, SEM and TEM. Increased corrosion resistance was observed with increased Ti content in the sputtered Mg–Ti alloys, but passive-like behavior was not reached until the Ti level (atomic %) was higher than the Mg level. The surface film that formed on sputtered Mg–Ti based alloys in NaCl solution was thick, discontinuous and non-protective, whereas a thin, continuous and protective Mg and Ti oxide film was formed on a sputtered Ti–Mg based alloy.

  19. The effects of passivation parameters on pitting potential of biomedical stainless steel

    Directory of Open Access Journals (Sweden)

    Petković Dušan Lj.

    2017-01-01

    Full Text Available Passivation is a chemical process in which the electrochemical condition of passivity is gained on the surface of metal alloys. Biomedical AISI 316LVM stainless steel (SS can be passivized by means of nitric acid immersion in order to improve a protective oxide layer on the surface and consequently increase corrosion resistance of the SS in the physiological solutions. In this study, multiple regression analysis and artificial neural network (ANN were employed for mathematical modeling of the AISI 316LVM SS passivation process after immersion in the nitric acid solution. The pitting potential, which represents the mea-sure of pitting corrosion resistance, was chosen as the response, while the passivation parameters were nitric acid concentration, temperature and passivation time. The comparison between experimental results and models predictions showed that only the ANN model provided statistically accurate predictions with a high coefficient of determination and a low mean relative error. Finally, based on the derived ANN equation, the effects of the passivation parameters on pitting potential were examined. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. ON174004 and Grant no. TR35034

  20. Operation of passive wax flashover and LiF ion sources on extraction applied-B ion diodes on SABRE

    International Nuclear Information System (INIS)

    Cuneo, M.E.; Hanson, D.L.; Smith, J.R.; Rosenthal, S.E.; Coats, R.S.; Bernard, M.A.

    1993-01-01

    The authors are fielding wax flashover and LiF anodes on an extraction ion diode on SABRE (Sandia Accelerator and Beam Research Experiment), a magnetically insulated linear induction voltage adder, presently providing a 6 MV, 300 kA output. These anodes are passive sources of principally hydrocarbon and lithium beams. In applied-B ion diodes, passive ion sources use the applied voltage to produce the required ions either through an electron assisted desorption and surface flashover process, and/or through field emission mechanisms. Passive sources therefore require power delivered to the diode before ions will be turned-on. Passive sources provide a simple way to generate ions to test accelerator performance, accelerator to diode coupling, diagnostics, and to study sources of divergence and divergence reduction techniques. The authors will discuss the effect of magnetic field geometry and the important role of cathode feed electrons in the formation and evolution of the A-K gap electron sheath in the diode. Experimental data on diode operation and beam production will be compared to the predictions of PIC code simulations

  1. Review of passive-blind detection in digital video forgery based on sensing and imaging techniques

    Science.gov (United States)

    Tao, Junjie; Jia, Lili; You, Ying

    2016-01-01

    Advances in digital video compression and IP communication technologies raised new issues and challenges concerning the integrity and authenticity of surveillance videos. It is so important that the system should ensure that once recorded, the video cannot be altered; ensuring the audit trail is intact for evidential purposes. This paper gives an overview of passive techniques of Digital Video Forensics which are based on intrinsic fingerprints inherent in digital surveillance videos. In this paper, we performed a thorough research of literatures relevant to video manipulation detection methods which accomplish blind authentications without referring to any auxiliary information. We presents review of various existing methods in literature, and much more work is needed to be done in this field of video forensics based on video data analysis and observation of the surveillance systems.

  2. Optimization of surface passivation for InGaAs/InP pin photodetectors using ammonium sulfide

    International Nuclear Information System (INIS)

    Sheela, D; Das Gupta, Nandita

    2008-01-01

    In this work, the effect of the process parameters during chemical and electrochemical passivation of InGaAs/InP PIN photodetectors using (NH 4 ) 2 S x (x >1) has been studied in detail. It has been observed that the time of passivation, temperature of the sulfide solution and illumination during electrochemical treatment play significant roles in the efficacy of the passivation process. These parameters therefore have to be carefully optimized in order to reduce the dark current of the detectors to a minimum value. The yield of the process is also found to improve with sulfur passivation

  3. Surface Passivation Mechanism of Atomic Layer Deposited Al2O3 Films on c-Si Studied by Optical Second-Harmonic Generation

    NARCIS (Netherlands)

    Gielis, J.J.H.; Verlaan, V.; Dingemans, G.; Sanden, van de M.C.M.; Kessels, W.M.M.; Terlinden, N.M.

    2009-01-01

    Recently, it was shown that Al2O3 thin films synthesized by (plasmaassisted) atomic layer deposition (ALD) provide excellent surface passivation of n, p and p+ type c-Si as highly relevant for c-Si photovoltaics. It was found that a large negative fixed charge density (up to 1013 cm-2) in the Al2O3

  4. Satellite passive microwave rain measurement techniques for land and ocean

    Science.gov (United States)

    Spencer, R. W.

    1985-01-01

    Multiseasonal rainfall was found to be measurable over land with satellite passive microwave data, based upon comparisons between Nimbus 7 Scanning Multichannel Microwave Radiometer (SMME) brightness temperatures (T sub B) and operational WSR-57 radar rain rates. All of the SMMR channels (bipolarized 37, 21, 18, 10.7, and 6.6. GHz T sub B) were compared to radar reflectivities for 25 SMMR passes and 234 radar scans over the U.S. during the spring, summer, and fall of 1979. It was found that the radar rain rates were closely related to the difference between 37 and 21 GHz T sub B. This result is due to the volume scattering effects of precipitation which cause emissivity decreases with frequency, as opposed to emissive surfaces (e.g., water) whose emissivities increase with frequency. Two frequencies also act to reduce the effects of thermometric temperature variations on T sub B to a miminum. During summer and fall, multiple correlation coefficients of 0.80 and 0.75 were obtained. These approach the limit of correlation that can be expected to exist between two very different data sources, especially in light of the errors attributable to manual digitization of PPI photographs of variable quality from various operational weather radar not calibrated for research purposes. During the spring, a significantly lower (0.63) correlation was found. This poorer performance was traced to cases of wet, unvegetated soil being sensed at the lower frequencies through light rain, partly negating the rain scattering signal.

  5. High-Q Variable Bandwidth Passive Filters for Software Defined Radio

    NARCIS (Netherlands)

    Arkesteijn, V.J.; Klumperink, Eric A.M.; Nauta, Bram

    2001-01-01

    An important aspect of Software Defined Radio is the ability to define the bandwidth of the filter that selects the desired channel. This paper describes a technique for channel filtering, in which two passive filters are combined to obtain a variable bandwidth. Passive filters have the advantage of

  6. High-Q variable bandwidth passive filters for Software Defined Radio

    NARCIS (Netherlands)

    Arkesteijn, V.J.; Klumperink, Eric A.M.; Nauta, Bram

    An important aspect of Software Defined Radio is the ability to define the bandwidth of the filter that selects the desired channel. This paper describes a technique for channel filtering, in which two passive filters are combined to obtain a variable bandwidth. Passive filters have the advantage of

  7. Protocol Monitoring Passive Solar Energy. Background document

    International Nuclear Information System (INIS)

    Van den Ham, E.R.

    1998-01-01

    A method has been developed by means of which the contribution of passive solar energy to the Dutch energy balance can be quantified univocally. The monitoring will be directed at the absolute amount of used solar energy, the relative contribution of passive solar energy to the energy demand in the Netherlands, and the average efficiency of passive solar energy systems. Based on a model of the total building stock the quantities to be monitored can be determined. The most important parameters in the model are: the window surface per orientation, the average U-value (heat transfer coefficient) of windows, the average ZTA-value (incoming solar radiation factor) of windows, and the presence of sun lounges and atriums

  8. Quantitative study of Xanthosoma violaceum leaf surfaces using RIMAPS and variogram techniques.

    Science.gov (United States)

    Favret, Eduardo A; Fuentes, Néstor O; Molina, Ana M

    2006-08-01

    Two new imaging techniques (rotated image with maximum averaged power spectrum (RIMAPS) and variogram) are presented for the study and description of leaf surfaces. Xanthosoma violaceum was analyzed to illustrate the characteristics of both techniques. Both techniques produce a quantitative description of leaf surface topography. RIMAPS combines digitized images rotation with Fourier transform, and it is used to detect patterns orientation and characteristics of surface topography. Variogram relates the mathematical variance of a surface with the area of the sample window observed. It gives the typical scale lengths of the surface patterns. RIMAPS detects the morphological variations of the surface topography pattern between fresh and dried (herbarium) samples of the leaf. The variogram method finds the characteristic dimensions of the leaf microstructure, i.e., cell length, papillae diameter, etc., showing that there are not significant differences between dry and fresh samples. The results obtained show the robustness of RIMAPS and variogram analyses to detect, distinguish, and characterize leaf surfaces, as well as give scale lengths. Both techniques are tools for the biologist to study variations of the leaf surface when different patterns are present. The use of RIMAPS and variogram opens a wide spectrum of possibilities by providing a systematic, quantitative description of the leaf surface topography.

  9. Passive elimination of static electricity in oil industry

    Directory of Open Access Journals (Sweden)

    Gaćanović Mićo

    2014-01-01

    Full Text Available This study explains the existing and real conditions of a possible passive elimination of static electricity when loading oil and oil derivatives. We are considering the formation and survival of gas bubbles both in the volume of oil in its depth, but also at the surface of oil and oil derivatives of the partly filled reservoir, and formation of both volume and surface electric charge in oil and oil derivatives. The study presents the research of formation and survival of static electricity in both reservoirs and tank trucks of different geometric shapes partly filled with oil and oil derivatives. We are proposing a new original possibility of passive elimination of static electricity when loading oil and oil derivatives in reservoirs and tank trucks. The proposed passive device for elimination of static electricity is protected at the international level in the domain of intellectual property (with a patent, model and distinctive mark.

  10. LETTER TO THE EDITOR: Surface passivation of (100) InP by organic thiols and polyimide as characterized by steady-state photoluminescence

    Science.gov (United States)

    Schvartzman, M.; Sidorov, V.; Ritter, D.; Paz, Y.

    2001-10-01

    A method for the passivation of indium phosphide, based on thiolated organic self-assembled monolayers (SAMs) that form highly ordered, close-packed structures on the semiconductor surface, is presented. It is shown that the intensity of steady-state photoluminescence (PL) of n-type InP wafers covered with the thiolated SAMs increases significantly (as much as 14-fold) upon their covering with the monolayers. The ease with which one can tailor the outer functional groups of the SAMs provides a way to connect this new class of passivators with standard encapsulators, such as polyimide. Indeed, the PL intensity of SAM-coated InP wafers was not altered upon their overcoating with polyimide, despite the high curing temperature of the polymer (200 °C).

  11. Passive water and ion transport by cotransporters

    DEFF Research Database (Denmark)

    Loo, D D; Hirayama, B A; Meinild, A K

    1999-01-01

    the Lp of control oocytes. Passive Na+ transport (Na+ leak) was obtained from the blocker-sensitive Na+ currents in the absence of substrates (glucose and GABA). 2. Passive Na+ and water transport through SGLT1 were blocked by phlorizin with the same sensitivity (inhibitory constant (Ki), 3-5 micro......1. The rabbit Na+-glucose (SGLT1) and the human Na+-Cl--GABA (GAT1) cotransporters were expressed in Xenopus laevis oocytes, and passive Na+ and water transport were studied using electrical and optical techniques. Passive water permeabilities (Lp) of the cotransporters were determined from......M). When Na+ was replaced with Li+, phlorizin also inhibited Li+ and water transport, but with a lower affinity (Ki, 100 microM). When Na+ was replaced by choline, which is not transported, the SGLT1 Lp was indistinguishable from that in Na+ or Li+, but in this case water transport was less sensitive...

  12. Investigations on passive containment cooling

    International Nuclear Information System (INIS)

    Knebel, J.U.; Cheng, X.; Neitzel, H.J.; Erbacher, F.J.; Hofmann, F.

    1997-01-01

    The composite containment design for advanced LWRs that has been examined under the PASCO project is a promising design concept for purely passive decay heat removal after a severe accident. The passive cooling processes applied are natural convection and radiative heat transfer. Heat transfer through the latter process removes at an emission coefficient of 0.9 about 50% of the total heat removed via the steel containment, and thus is an essential factor. The heat transferring surfaces must have a high emission coefficient. The sump cooling concept examined under the SUCO project achieves a steady, natural convection-driven flow from the heat source to the heat sink. (orig./CB) [de

  13. Decision Support on Small size Passive Samples

    Directory of Open Access Journals (Sweden)

    Vladimir Popukaylo

    2018-05-01

    Full Text Available A construction technique of adequate mathematical models for small size passive samples, in conditions when classical probabilistic-statis\\-tical methods do not allow obtaining valid conclusions was developed.

  14. Degradation of materials and passivity

    International Nuclear Information System (INIS)

    Meisel, W.

    1997-01-01

    Demanding for a reduction in materials degradation is a serious problem all over the world. Moessbauer spectroscopy (MS) is, among others, a very valuable tool to follow many degradation processes. Evidently, Fe is the most important Moessbauer element considering the overall presence of iron in everyday life. MS may contribute to our knowledge about nearly all fields of materials degradation, chemical, mechanical, thermal, irradiative, etc. Following some general lines, corrosion is considered in particular. MS is applicable to investigate the bulk of materials as well as their surface layers with an information depth of ca. 250 nm. In general, it has to be applied as a surface sensitive method in combination with other relevant methods in order to get a detailed insight into ongoing processes. Some examples have been selected to elucidate the application of MS in this field. Another class of examples concerns attempts to prevent corrosion, i.e., the application of coatings and transforming chemicals. A very effective and most natural way to reduce corrosion is the passivation of materials. The effect of passive layers and their destruction by environmental influences are discussed using results of MS and related methods. It is outlined that passivity is not restricted to chemically treated metals but can be considered as a general concept for preventing different kinds of materials from degradation. (orig.)

  15. Evolution of Calcareous Deposits and Passive Film on 304 Stainless Steel with Cathodic Polarization in Sea Water

    Directory of Open Access Journals (Sweden)

    Tianxiang Sun

    2018-05-01

    Full Text Available The change of protective current density, the formation and growth of calcareous deposits, and the evolution of passive film on 304 stainless steel (SS were investigated at different potentials of cathodic polarization in sea water. Potentiostatic polarization, electrochemical impedance spectroscopy (EIS, and surface analysis techniques of scanning electron microscopy (SEM, energy dispersive X-ray (EDX microanalysis and X-ray diffraction (XRD were used to characterize the surface conditions. It was found that the protective current density was smaller for keeping polarization at −0.80 V (vs. saturated calomel electrode (SCE, same as below than that at −0.65 V. The calcareous deposits could not be formed on 304 SS with polarization at −0.50 V while it was well protected. The formation rate, the morphology, and the constituent of the calcareous deposits depended on the applied potential. The resistance of passive film on 304 SS decreased at the first stage and then increased when polarized at −0.80 V and −0.65 V, which was related to the reduction and the repair of passive film. For the stainless steel polarized at −0.50 V, the film resistance increased with polarization time, indicating that the growth of oxide film was promoted.

  16. Control of Sound Transmission with Active-Passive Tiles

    OpenAIRE

    Goldstein, Andre L.

    2006-01-01

    Nowadays, numerous applications of active sound transmission control require lightweight partitions with high transmission loss over a broad frequency range and simple control strategies. In this work an active-passive sound transmission control approach is investigated that potentially addresses these requirements. The approach involves the use of lightweight stiff panels, or tiles, attached to a radiating base structure through active-passive soft mounts and covering the structure surface. ...

  17. Fabrication of a wettability-gradient surface on copper by screen-printing techniques

    International Nuclear Information System (INIS)

    Huang, Ding-Jun; Leu, Tzong-Shyng

    2015-01-01

    In this study, a screen-printing technique is utilized to fabricate a wettability-gradient surface on a copper substrate. The pattern definitions on the copper surface were freely fabricated to define the regions with different wettabilities, for which the printing definition technique was developed as an alternative to the existing costly photolithography techniques. This fabrication process using screen printing in tandem with chemical modification methods can easily realize an excellent wettability-gradient surface with superhydrophobicity and superhydrophilicity. Surface analyses were performed to characterize conditions in some fabrication steps. A water droplet movement sequence is provided to clearly demonstrate the droplet-driving effectiveness of the fabricated gradient surface. The droplet-driving efficiency offers a promising solution for condensation heat transfer applications in the foreseeable future. (paper)

  18. Surface analytical investigations of the thermal behaviour of passivated Zircaloy-4 surfaces and of the reaction behaviour of iodine with Zircaloy-4 surfaces

    International Nuclear Information System (INIS)

    Kaufmann, R.

    1988-07-01

    In the first part of the present work the thermal behaviour of atmospherically oxidized Zircaloy-4 samples was investigated at various temperatures. In a next step the amount of iodine adsorbed at the metallic surface was determined as well at room temperature with varying iodine exposures as for constant exposure but varying temperatures. Furthermore, the zirconium iodide species resulting from the interaction of iodine with the Zircaloy-4 and desorbed at higher temperatures were identified by means of residual gas analysis. During these studies it was found that the oxidic overlayer of the passivated Zircaloy-4 samples is decomposed at temperatures above 200 0 C. The iodine uptake at metallic surfaces (cleaned by Ar-ion sputtering) at room temperature slows markedly down after formation of a closed zirconium-iodide overlayer and consequently the further reaction proceeds diffusion-controlled. At 200 0 C ZrI 4 is formed being the thermodynamically most stable Zr-iodide. During desorption experiments using iodine exposed Zircaloy-4 samples the release of ZrI 4 was proved. The results obtained from the various experiments are finally discussed with respect to the iodine-induced stress corrosion cracking process and the underlying basic mechanisms and a transport mechanism for the SCC in nuclear fuel rods is proposed. (orig./RB) [de

  19. Experiments, Passive Observation and Scenario Analysis

    DEFF Research Database (Denmark)

    Hoover, Kevin D.; Juselius, Katarina

    The paper provides a careful, analytical account of Trygve Haavelmo's unsystematic, but important, use of the analogy between controlled experiments common in the natural sciences and econometric techniques. The experimental analogy forms the linchpin of the methodology for passive observation...

  20. Experimental protocols for and studies of the effects of surface passivation and water isotopes on the gliding speed of microtubules propelled by kinesin-1

    Science.gov (United States)

    Maloney, Roger Andrew

    This dissertation explores how the kinesin-1 and microtubule system is affected by surface passivation and water isotopes. Surface passivation was found to affect the gliding speed that microtubules exhibit in the gliding motility assay and the lengths of microtubules supported by the passivation. It was also found that gliding speeds of microtubules are very sensitive to temperature changes. Studies changing the water isotope were a first attempt to investigate if changing the solvent changed the osmotic pressure of the solution kinesin and microtubules were in. No osmotic pressure changes were observed, however, the experiments using different isotopes of water did illuminate the possibility that kinesin may be sensitive to viscosity changes in the solvent. This experiment also suggests further experiments that can be specifically designed to probe osmotic pressure changes. This thesis was also the first thesis ever, to the best of the author's knowledge, to be done in a completely open format. All information and notebook entries that are related to it, as well as the thesis itself, can be found on the website OpenWetWare. The thesis can also be found there including all the different versions that went into its editing. The philosophy and process of making data open and accessible to every one is also discussed.

  1. Benzotriazole as a passivating agent during chemical mechanical planarization of Ni–P alloy substrates

    International Nuclear Information System (INIS)

    Mu, Yan; Zhong, Mingjie; Rushing, Kenneth J.; Li, Yuzhuo; Shipp, Devon A.

    2014-01-01

    Highlights: • Benzotriazole (BTA) is used to passivate the Chemical Mechanical Planarization of Ni-P alloys. • BTA significantly decreases the average R a of the polished surfaces at low concentrations. • XPS, AFM and electrochemical studies are used to probe passivation effects of BTA on Ni–P surfaces. • Findings potentially impact hard disk drive manufacturing processes. - Abstract: With the rapid increase of data storage density on computer hard disk drives (HDDs), the operation distance between read/write head and disk surface has fallen to just a few nanometers. Chemical mechanical planarization (CMP) has been selected as the best process to produce high quality surface finish during the manufacturing of Ni–P alloy substrates for HDD applications. Herein we report, for the first time, the use of benzotriazole (BTA) as a passivating agent in CMP slurries to decrease the surface roughness (R a ). Results show that the average R a of the polished surfaces is decreased to 0.2 nm in a 5 μm × 5 μm scan area with the adding of 2 mM BTA. X-ray photoelectron spectroscopy (XPS) and electrochemical studies results further prove the interaction between BTA and Ni–P surface and the formation of an effective passivating layer on Cu in CMP slurries containing BTA

  2. Supersonic impinging jet noise reduction using a hybrid control technique

    Science.gov (United States)

    Wiley, Alex; Kumar, Rajan

    2015-07-01

    Control of the highly resonant flowfield associated with supersonic impinging jet has been experimentally investigated. Measurements were made in the supersonic impinging jet facility at the Florida State University for a Mach 1.5 ideally expanded jet. Measurements included unsteady pressures on a surface plate near the nozzle exit, acoustics in the nearfield and beneath the impingement plane, and velocity field using particle image velocimetry. Both passive control using porous surface and active control with high momentum microjet injection are effective in reducing nearfield noise and flow unsteadiness over a range of geometrical parameters; however, the type of noise reduction achieved by the two techniques is different. The passive control reduces broadband noise whereas microjet injection attenuates high amplitude impinging tones. The hybrid control, a combination of two control methods, reduces both broadband and high amplitude impinging tones and surprisingly its effectiveness is more that the additive effect of the two control techniques. The flow field measurements show that with hybrid control the impinging jet is stabilized and the turbulence quantities such as streamwise turbulence intensity, transverse turbulence intensity and turbulent shear stress are significantly reduced.

  3. Tablet surface characterisation by various imaging techniques

    DEFF Research Database (Denmark)

    Seitavuopio, Paulus; Rantanen, Jukka; Yliruusi, Jouko

    2003-01-01

    The aim of this study was to characterise tablet surfaces using different imaging and roughness analytical techniques including optical microscopy, scanning electron microscopy (SEM), laser profilometry and atomic force microscopy (AFM). The test materials compressed were potassium chloride (KCl......) and sodium chloride (NaCl). It was found that all methods used suggested that the KCl tablets were smoother than the NaCl tablets and higher compression pressure made the tablets smoother. Imaging methods like optical microscopy and SEM can give useful information about the roughness of the sample surface...

  4. Radiographic film: surface dose extrapolation techniques

    International Nuclear Information System (INIS)

    Cheung, T.; Yu, P.K.N.; Butson, M.J.; Cancer Services, Wollongong, NSW; Currie, M.

    2004-01-01

    Full text: Assessment of surface dose delivered from radiotherapy x-ray beams for optimal results should be performed both inside and outside the prescribed treatment fields An extrapolation technique can be used with radiographic film to perform surface dose assessment for open field high energy x-ray beams. This can produce an accurate 2 dimensional map of surface dose if required. Results have shown that surface % dose can be estimated within ±3% of parallel plate ionisation chamber results with radiographic film using a series of film layers to produce an extrapolated result. Extrapolated percentage dose assessment for 10cm, 20cmand 30cm square fields was estimated to be 15% ± 2%, 29% ± 3% and 38% ± 3% at the central axis and relatively uniform across the treatment field. Corresponding parallel plate ionisation chamber measurement are 16%, 27% and 37% respectively. Surface doses are also measured outside the treatment field which are mainly due to scattered electron contamination. To achieve this result, film calibration curves must be irradiated to similar x-ray field sizes as the experimental film to minimize quantitative variations in film optical density caused by varying x-ray spectrum with field size. Copyright (2004) Australasian College of Physical Scientists and Engineers in Medicine

  5. Passive Solar Techniques to Improve Thermal Comfort and Reduce Energy Consumption of Domestic Use

    OpenAIRE

    Naci Kalkan; Ihsan Dagtekin

    2016-01-01

    Passive design responds to improve indoor thermal comfort and minimize the energy consumption. The present research analyzed the how efficiently passive solar technologies generate heating and cooling and provide the system integration for domestic applications. In addition to this, the aim of this study is to increase the efficiency of solar systems system with integration some innovation and optimization. As a result, outputs of the project might start a new sector to provide environmentall...

  6. Development of a passive and remote magnetic microsensor with thin-film giant magnetoimpedance element and surface acoustic wave transponder

    KAUST Repository

    Al Rowais, Hommood; Li, Bodong; Liang, Cai; Green, Scott Ryan; Gianchandani, Yogesh B.; Kosel, Jü rgen

    2011-01-01

    This paper presents the development of a wireless magnetic field sensor consisting of a three-layer thin-film giant magnetoimpedance sensor and a surface acoustic wave device on one substrate. The goal of this integration is a passive and remotely interrogated sensor that can be easily mass fabricated using standard microfabrication tools. The design parameters, fabrication process, and a model of the integrated sensor are presented together with experimental results of the sensor. © 2011 American Institute of Physics.

  7. Passive blood plasma separation at the microscale: a review of design principles and microdevices

    International Nuclear Information System (INIS)

    Tripathi, Siddhartha; Varun Kumar, Y V Bala; Joshi, Suhas S; Agrawal, Amit; Prabhakar, Amit

    2015-01-01

    Blood plasma separation is vital in the field of diagnostics and health care. Due to the inherent advantages obtained in the transition to microscale, the recent trend in these fields is a rapid shift towards the miniaturization of complex macro processes. Plasma separation in microdevices is one such process which has received extensive attention from researchers globally. Blood plasma separation techniques based on microfluidic platforms can be broadly classified into two categories. While active techniques utilize external force fields for separation, the passive techniques are dependent on biophysical effects, cell behavior, hydrodynamic forces and channel geometry for blood plasma separation. In general, passive separation methods are favored in comparison to active methods because they tend to avoid design complexities and are relatively easy to integrate with biosensors; additionally they are cost effective. Here we review passive separation techniques demonstrating separation and blood behavior at microscale. We present an extensive review of relevant biophysical laws, along with experimental details of various passive separation techniques and devices exploiting these physical effects. The relative performances, and the advantages and disadvantages of microdevices discussed in the literature, are compared and future challenges are brought about. (topical review)

  8. Study of SiNx:Hy passivant layers for AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Redondo-Cubero, A.; Gago, R.; Romero, M.F.; Gonzalez-Posada, F.; Brana, A.F.; Munoz, E.; Jimenez, A.

    2008-01-01

    In this work, hydrogenated silicon nitride (SiN x :H y ) grown by chemical vapour deposition as passivant layers for high electron mobility transistors (HEMT) have been studied. The film composition and bonding structure were determined by ion beam analysis and X-ray absorption spectroscopy techniques, respectively. The effects of gas precursors (SiH 4 /N 2 and SiH 4 /NH 3 ) and film/substrate interface on the film growth have been addressed. The growth on different substrates (Si, GaN, AlGaN), and the effects of plasma pre-treatments have been studied before the growth and the film growth evolution. Results yield no significant differences in all the analysed samples. This points out the relevant role of SiHn radicals as growth precursor species and that intrinsic characteristics of the SiNx:Hy layers are not affected by the film/substrate interface. Hence, improved performance of HEMT with surface plasma pre-treatments before passivation should be related to extrinsic mechanisms (such as creation of defects in AlGaN surface, removal of the surface contamination or ion-induced roughness). (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. The Impact of HCl Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors

    International Nuclear Information System (INIS)

    Xue Bai-Qing; Chang Hu-Dong; Sun Bing; Wang Sheng-Kai; Liu Hong-Gang

    2012-01-01

    Surface treatment for Ge substrates using hydrogen chlorine cleaning and chemical passivation are investigated on AuTi/Al 2 O 3 /Ge metal-oxide-semiconductor capacitors. After hydrogen chlorine cleaning, a smooth Ge surface almost free from native oxide is demonstrated by atomic force microscopy and x-ray photoelectron spectroscopy observations. Passivation using a hydrogen chlorine solution is found to form a chlorine-terminated surface, while aqueous ammonium sulfide pretreatment results in a surface terminated by Ge-S bonding. Compared with chlorine-passivated samples, the sulfur-passivated ones show less frequency dispersion and better thermal stability based on capacitance-voltage characterizations. The samples with HCl pre-cleaning and (NH 4 ) 2 S passivation show less frequency dispersion than the HF pre-cleaning and (NH 4 ) 2 S passivated ones. The surface treatment process using hydrogen chlorine cleaning followed by aqueous ammonium sulfide passivation demonstrates a promising way to improve gate dielectric/Ge interface quality. (condensed matter: structure, mechanical and thermal properties)

  10. Re-passivation Potential of Alloy 22 in Chloride plus Nitrate Solutions using the Potentiodynamic-Galvano-static-Potentiostatic Method

    International Nuclear Information System (INIS)

    Evans, Kenneth J.; Rebak, Raul B.

    2007-01-01

    In general, the susceptibility of Alloy 22 to suffer crevice corrosion is measured using the Cyclic Potentiodynamic Polarization (CPP) technique. This is a fast technique that gives rather accurate and reproducible values of re-passivation potential (ER1) in most cases. In the fringes of susceptibility, when the environment is not highly aggressive, the values of re-passivation potential using the CPP technique may not be highly reproducible, especially because the technique is fast. To circumvent this, the re-passivation potential of Alloy 22 was measured using a slower method that combines Potentiodynamic-Galvano-static-Potentiostatic steps (called here the Tsujikawa-Hisamatsu Electrochemical or THE method). The THE method applies the charge to the specimen in a more controlled way, which may give more reproducible re-passivation potential values, especially when the environment is not aggressive. The values of re-passivation potential of Alloy 22 in sodium chloride plus potassium nitrate solutions were measured using the THE and CPP methods. Results show that both methods yield similar values of re-passivation potential, especially under aggressive conditions. (authors)

  11. Atomic-layer deposited passivation schemes for c-Si solar cells

    NARCIS (Netherlands)

    van de Loo, B.W.H.; Macco, B.; Melskens, J.; Verheijen, M.A.; Kessels, W.M.M.E.

    2016-01-01

    A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5,

  12. XPS study of the passive films formed on nitrogen-implanted austenitic stainless steels

    International Nuclear Information System (INIS)

    Marcus, P.; Bussell, M.E.

    1992-01-01

    Austenitic stainless steels (304-type) have been implanted with nitrogen ions in order to investigate the effects of implanted nitrogen on their electrochemical behaviour and on the nature of the passive film formed on the steels in acid (0.5M H 2 SO 4 ). Alloys with two nitrogen doses have been prepared (2.5x10 16 and 2x10 17 N atoms/cm 2 ). The implanted alloys have been characterized by 15 N-NRA (nuclear reaction analysis) and XPS (X-ray photoelectron spectroscopy). Alloy surfaces with well-defined N concentrations were prepared, prior to the electrochemical measurements, by argon-ion sputtering of the implanted material for a fixed time in order to reach a well-defined point on the nitrogen depth profile. The samples were then transferred without exposure to air to an electrochemical cell mounted in an inert gas glove box. The implanted nitrogen modifies the electrochemical behaviour of the alloy. The anodic dissolution in the active state is enhanced, and the current density in the passive state is increased. Surface analysis of the alloys by XPS after passivation shows that implanted nitrogen is enriched on the surface during dissolution and passivation of the alloys. The process by which N is enriched on the surface is anodic segregation, which was first observed and characterized for S on Ni and Ni-Fe alloys. The passive films formed on both the unimplanted and implanted alloys have a bilayer structure with an inner oxide layer and an outer hydroxide layer, but on the nitrogen-implanted alloy, a chromium nitride phase is formed at the expense of the chromium oxide. After passivation of the implanted alloys, three chemical states of nitrogen are detected in the N 1s spectrum. The high binding energy (399.4 eV) peak corresponds to a nitrogen species located on the surface of the passive film, which is produced by reaction of the implanted nitrogen with the solution. (orig./WL)

  13. Surface passivation of Fe{sub 3}O{sub 4} nanoparticles with Al{sub 2}O{sub 3} via atomic layer deposition in a rotating fluidized bed reactor

    Energy Technology Data Exchange (ETDEWEB)

    Duan, Chen-Long; Deng, Zhang; Cao, Kun [State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei 430074 (China); Yin, Hong-Feng [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201 (China); Shan, Bin [State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei 430074 (China); Chen, Rong, E-mail: rongchen@mail.hust.edu.cn [State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei 430074 (China)

    2016-07-15

    Iron(II,III) oxide (Fe{sub 3}O{sub 4}) nanoparticles have shown great promise in many magnetic-related applications such as magnetic resonance imaging, hyperthermia treatment, and targeted drug delivery. Nevertheless, these nanoparticles are vulnerable to oxidation and magnetization loss under ambient conditions, and passivation is usually required for practical applications. In this work, a home-built rotating fluidized bed (RFB) atomic layer deposition (ALD) reactor was employed to form dense and uniform nanoscale Al{sub 2}O{sub 3} passivation layers on Fe{sub 3}O{sub 4} nanoparticles. The RFB reactor facilitated the precursor diffusion in the particle bed and intensified the dynamic dismantling of soft agglomerates, exposing every surface reactive site to precursor gases. With the aid of in situ mass spectroscopy, it was found that a thicker fluidization bed formed by larger amount of particles increased the residence time of precursors. The prolonged residence time allowed more thorough interactions between the particle surfaces and the precursor gas, resulting in an improvement of the precursor utilization from 78% to nearly 100%, even under a high precursor feeding rate. Uniform passivation layers around the magnetic cores were demonstrated by both transmission electron microscopy and the statistical analysis of Al mass concentrations. Individual particles were coated instead of the soft agglomerates, as was validated by the specific surface area analysis and particle size distribution. The results of thermogravimetric analysis suggested that 5 nm-thick ultrathin Al{sub 2}O{sub 3} coatings could effectively protect the Fe{sub 3}O{sub 4} nanoparticles from oxidation. The x-ray diffraction patterns also showed that the magnetic core crystallinity of such passivated nanoparticles could be well preserved under accelerated oxidation conditions. The precise thickness control via ALD maintained the saturation magnetization at 66.7 emu/g with a 5 nm-thick Al

  14. Sulfur passivation and contact methods for GaAs nanowire solar cells

    International Nuclear Information System (INIS)

    Tajik, N; Peng, Z; Kuyanov, P; LaPierre, R R

    2011-01-01

    The effect of sulfur passivation on core-shell p-n junction GaAs nanowire (NW) solar cells has been investigated. Devices of two types were investigated, consisting of indium tin oxide contact dots or opaque Au finger electrodes. Lateral carrier transport from the NWs to the contact fingers was achieved via a p-doped GaAs surface conduction layer. NWs between the opaque contact fingers had sidewall surfaces exposed for passivation by sulfur. The relative cell efficiency increased by 19% upon passivation. The contribution of the thin film grown between the NWs to the total cell efficiency was estimated by removing the NWs using a sonication procedure. Mechanisms of carrier transport and photovoltaic effects are discussed on the basis of spatially resolved laser scanning measurements.

  15. A surface acoustic wave response detection method for passive wireless torque sensor

    Science.gov (United States)

    Fan, Yanping; Kong, Ping; Qi, Hongli; Liu, Hongye; Ji, Xiaojun

    2018-01-01

    This paper presents an effective surface acoustic wave (SAW) response detection method for the passive wireless SAW torque sensor to improve the measurement accuracy. An analysis was conducted on the relationship between the response energy-entropy and the bandwidth of SAW resonator (SAWR). A self-correlation method was modified to suppress the blurred white noise and highlight the attenuation characteristic of wireless SAW response. The SAW response was detected according to both the variation and the duration of energy-entropy ascension of an acquired RF signal. Numerical simulation results showed that the SAW response can be detected even when the signal-to-noise ratio (SNR) is 6dB. The proposed SAW response detection method was evaluated with several experiments at different conditions. The SAW response can be well distinguished from the sinusoidal signal and the noise. The performance of the SAW torque measurement system incorporating the detection method was tested. The obtained repeatability error was 0.23% and the linearity was 0.9934, indicating the validity of the detection method.

  16. Calibration of the Chemcatcher passive sampler for monitoring selected polar and semi-polar pesticides in surface water

    International Nuclear Information System (INIS)

    Gunold, Roman; Schaefer, Ralf Bernhard; Paschke, Albrecht; Schueuermann, Gerrit; Liess, Matthias

    2008-01-01

    Passive sampling is a powerful method for continuous pollution monitoring, but calibration experiments are still needed to generate sampling rates in order to estimate water concentrations for polar compounds. We calibrated the Chemcatcher device with an uncovered SDB-XC Empore disk as receiving phase for 12 polar and semi-polar pesticides in aquatic environments in flow-through tank experiments at two water flow velocities (0.135 m/s and 0.4 m/s). In the 14-day period of exposure the uptake of test substances in the sampler remained linear, and all derived sampling rates R s were in the range of 0.1 to 0.5 L/day. By additionally monitoring the release of two preloaded polar pesticides from the SDB-XC disks over time, very high variation in release kinetics was found, which calls into question the applicability of performance reference compounds. Our study expands the applicability of the Chemcatcher for monitoring trace concentrations of pesticides with frequent occurrence in water. - We calibrated the Chemcatcher passive sampler for current-use polar pesticides in surface waters, allowing its application in future monitoring studies

  17. Highly air stable passivation of graphene based field effect devices.

    Science.gov (United States)

    Sagade, Abhay A; Neumaier, Daniel; Schall, Daniel; Otto, Martin; Pesquera, Amaia; Centeno, Alba; Elorza, Amaia Zurutuza; Kurz, Heinrich

    2015-02-28

    The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated and stored in ambient atmosphere. This is achieved by selecting proper seed layer prior to deposition of encapsulation layer. The passivated devices are also demonstrated to be robust towards the exposure to chemicals and heat treatments, typically used during device fabrication. Additionally, the passivation of high stability and reproducible characteristics is also shown for functional devices like integrated graphene based inverters.

  18. Passivation of aluminum with alkyl phosphonic acids for biochip applications

    Science.gov (United States)

    Attavar, Sachin; Diwekar, Mohit; Linford, Matthew R.; Davis, Mark A.; Blair, Steve

    2010-09-01

    Self-assembly of decylphosphonic acid (DPA) and octadecylphosphonic acid (ODPA) was studied on aluminum films using XPS, ToF-SIMS and surface wettability. Modified aluminum films were tested for passivation against silanization and subsequent oligonucleotide attachment. Passivation ratios of at least 450:1 compared to unprotected aluminum were obtained, as quantified by attachment of radio-labeled oligos.

  19. Surface diffusion studies by optical diffraction techniques

    International Nuclear Information System (INIS)

    Xiao, X.D.

    1992-11-01

    The newly developed optical techniques have been combined with either second harmonic (SH) diffraction or linear diffraction off a monolayer adsorbate grating for surface diffusion measurement. Anisotropy of surface diffusion of CO on Ni(l10) was used as a demonstration for the second harmonic dim reaction method. The linear diffraction method, which possesses a much higher sensitivity than the SH diffraction method, was employed to study the effect of adsorbate-adsorbate interaction on CO diffusion on Ni(l10) surface. Results showed that only the short range direct CO-CO orbital overlapping interaction influences CO diffusion but not the long range dipole-dipole and CO-NI-CO interactions. Effects of impurities and defects on surface diffusion were further explored by using linear diffraction method on CO/Ni(110) system. It was found that a few percent S impurity can alter the CO diffusion barrier height to a much higher value through changing the Ni(110) surface. The point defects of Ni(l10) surface seem to speed up CO diffusion significantly. A mechanism with long jumps over multiple lattice distance initiated by CO filled vacancy is proposed to explain the observed defect effect

  20. The effect of cathode bias (field effect) on the surface leakage current of CdZnTe detectors

    International Nuclear Information System (INIS)

    Bolotnikov, A.E.; Hubert Chen, C.M.; Cook, W.R.; Harrison, F.A.; Kuvvetli, I.; Schindler, S.M.; Stahle, C.M.; Parker, B.H.

    2003-01-01

    Surface resistivity is an important parameter of multi-electrode CZT detectors such as coplanar-grid, strip, or pixel detectors. Low surface resistivity results in a high leakage current and affects the charge collection efficiency in the areas near contacts. Thus, it is always desirable to have the surface resistivity of the detector as high as possible. In the past the most significant efforts were concentrated to develop passivation techniques for CZT detectors. However, as we found, the field-effect caused by a bias applied on the cathode can significantly reduce the surface resistivity even though the detector surface was carefully passivated. In this paper we illustrate that the field-effect is a common feature of the CZT multi-electrode detectors, and discuss how to take advantage of this effect to improve the surface resistivity of CZT detectors

  1. Passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solution

    Science.gov (United States)

    Luo, Hong; Su, Huaizhi; Dong, Chaofang; Li, Xiaogang

    2017-04-01

    In this paper, the passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solutions at different pH was evaluated by potentiodynamic measurements, electrochemical impedance spectroscopy. The composition of the passive film and surface morphology were investigated by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), and scanning electron microscopy, respectively. The results reveal that metastable pitting susceptibility, stable pitting corrosion, and composition of the passive film are influenced by pH value. After long time immersion, a bilayer structure passive film can be formed in this environment. The appearance of molybdates on the outermost surface layer, further enhancing the stability of the passive film. Moreover, the good pitting corrosion resistance of 316L stainless steel in simulated concrete pore solution without carbonated is mainly due to the presence of high Cr/Fe ratio and molybdates ions within the passive film.

  2. Local Fine Structural Insight into Mechanism of Electrochemical Passivation of Titanium.

    Science.gov (United States)

    Wang, Lu; Yu, Hongying; Wang, Ke; Xu, Haisong; Wang, Shaoyang; Sun, Dongbai

    2016-07-20

    Electrochemically formed passive film on titanium in 1.0 M H2SO4 solution and its thickness, composition, chemical state, and local fine structure are examined by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and X-ray absorption fine structure. AES analysis reveals that the thickness and composition of oxide film are proportional to the reciprocal of current density in potentiodynamic polarization. XPS depth profiles of the chemical states of titanium exhibit the coexistence of various valences cations in the surface. Quantitative X-ray absorption near edge structure analysis of the local electronic structure of the topmost surface (∼5.0 nm) shows that the ratio of [TiO2]/[Ti2O3] is consistent with that of passivation/dissolution of electrochemical activity. Theoretical calculation and analysis of extended X-ray absorption fine structure spectra at Ti K-edge indicate that both the structures of passivation and dissolution are distorted caused by the appearance of two different sites of Ti-O and Ti-Ti. And the bound water in the topmost surface plays a vital role in structural disorder confirmed by XPS. Overall, the increase of average Ti-O coordination causes the electrochemical passivation, and the dissolution is due to the decrease of average Ti-Ti coordination. The structural variations of passivation in coordination number and interatomic distance are in good agreement with the prediction of point defect model.

  3. Influence of cerium on passivity behavior of wrought AZ91 alloy

    International Nuclear Information System (INIS)

    Wang Henan; Li Ying; Wang Fuhui

    2008-01-01

    In this paper, more focus had been put on the passivity behavior of wrought AZ91 alloy with 1.5 mass% Ce. The passive current density of wrought AZ91 alloy increased with addition of Ce and the passive film became unstable. Structures and compositions of the passive films formed on wrought AZ91 alloy without and with Ce in 0.01 M NaOH aqueous solution were analyzed by potentiostatic polarization, potentiostatic-galvanostatic (P-G) transient technique and X-ray photoelectron spectroscopy (XPS). The results showed that Ce only accumulated in the inner layer of passive film in the form of CeO 2 . Further analysis revealed that there were two main effects of Ce on the passive process of wrought AZ91 alloy: first, the existence of CeO 2 in inner layer of passive film made mass transport through the passive film follow tangent hyperbolic (T) impedance instead of Warburg impedance (W); second, donor concentration (N d ) of the passive film increased by a factor 10 when 1.5 mass% Ce existed in wrought AZ91 alloy, which led to the higher passivity current density

  4. In situ passivation of GaAsP nanowires.

    Science.gov (United States)

    Himwas, C; Collin, S; Rale, P; Chauvin, N; Patriarche, G; Oehler, F; Julien, F H; Travers, L; Harmand, J-C; Tchernycheva, M

    2017-12-08

    We report on the structural and optical properties of GaAsP nanowires (NWs) grown by molecular-beam epitaxy. By adjusting the alloy composition in the NWs, the transition energy was tuned to the optimal value required for tandem III-V/silicon solar cells. We discovered that an unintentional shell was also formed during the GaAsP NW growth. The NW surface was passivated by an in situ deposition of a radial Ga(As)P shell. Different shell compositions and thicknesses were investigated. We demonstrate that the optimal passivation conditions for GaAsP NWs (with a gap of 1.78 eV) are obtained with a 5 nm thick GaP shell. This passivation enhances the luminescence intensity of the NWs by 2 orders of magnitude and yields a longer luminescence decay. The luminescence dynamics changes from single exponential decay with a 4 ps characteristic time in non-passivated NWs to a bi-exponential decay with characteristic times of 85 and 540 ps in NWs with GaP shell passivation.

  5. In situ passivation of GaAsP nanowires

    Science.gov (United States)

    Himwas, C.; Collin, S.; Rale, P.; Chauvin, N.; Patriarche, G.; Oehler, F.; Julien, F. H.; Travers, L.; Harmand, J.-C.; Tchernycheva, M.

    2017-12-01

    We report on the structural and optical properties of GaAsP nanowires (NWs) grown by molecular-beam epitaxy. By adjusting the alloy composition in the NWs, the transition energy was tuned to the optimal value required for tandem III-V/silicon solar cells. We discovered that an unintentional shell was also formed during the GaAsP NW growth. The NW surface was passivated by an in situ deposition of a radial Ga(As)P shell. Different shell compositions and thicknesses were investigated. We demonstrate that the optimal passivation conditions for GaAsP NWs (with a gap of 1.78 eV) are obtained with a 5 nm thick GaP shell. This passivation enhances the luminescence intensity of the NWs by 2 orders of magnitude and yields a longer luminescence decay. The luminescence dynamics changes from single exponential decay with a 4 ps characteristic time in non-passivated NWs to a bi-exponential decay with characteristic times of 85 and 540 ps in NWs with GaP shell passivation.

  6. Effect of passive concentration as instructional set for training enhancement of EEG alpha.

    Science.gov (United States)

    Knox, S S

    1980-12-01

    The technique of passive concentration, employed by autogenic training and Transcendental Meditation for achieving relaxation, was tested here as a technique for enhancing EEG alpha. Of 30 subjects displaying between 15% and 74% alpha in their resting EEGs recruited, 10 had to be eliminated. The remaining 20 constituted two groups. One was instructed only to attempt to maintain a tone indicating alpha but given no information about technique (control group). The other was given additional instructions in passive concentration (experimental group). Both were given four 5-min. trials a day for 4 consecutive days. Heart rate and skin conductance were measured to monitor autonomic arousal. The group receiving instructions in passive concentration had significantly less alpha than the control group, which did not increase amount of alpha above baseline. The reduction of alpha in the experimental group was interpreted as resulting from beginning long training periods (20 min. per day), a practice advocated by Transcendental Meditation but discouraged by autogenic training. It was concluded that the relevance of passive concentration for alpha enhancement is doubtful.

  7. Online measurement of bead geometry in GMAW-based additive manufacturing using passive vision

    International Nuclear Information System (INIS)

    Xiong, Jun; Zhang, Guangjun

    2013-01-01

    Additive manufacturing based on gas metal arc welding is an advanced technique for depositing fully dense components with low cost. Despite this fact, techniques to achieve accurate control and automation of the process have not yet been perfectly developed. The online measurement of the deposited bead geometry is a key problem for reliable control. In this work a passive vision-sensing system, comprising two cameras and composite filtering techniques, was proposed for real-time detection of the bead height and width through deposition of thin walls. The nozzle to the top surface distance was monitored for eliminating accumulated height errors during the multi-layer deposition process. Various image processing algorithms were applied and discussed for extracting feature parameters. A calibration procedure was presented for the monitoring system. Validation experiments confirmed the effectiveness of the online measurement system for bead geometry in layered additive manufacturing. (paper)

  8. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors.

    Science.gov (United States)

    Marrs, Michael A; Raupp, Gregory B

    2016-07-26

    Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm² and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

  9. Development and applications of the contact electric resistance technique

    Energy Technology Data Exchange (ETDEWEB)

    Saario, T.

    1995-12-31

    At the moment both the scientific understanding of corrosion processes and the engineering practices of corrosion control in power plants can benefit considerably from the development of in situ on-line instruments for characterisation of the surface films on construction materials. In this work a new in situ Contact Electric Resistance (CER) technique has been developed for measurement of electric resistance of surface films on metals. The CER technique was applied in this work in several different research areas. These include e.g. localized corrosion of stainless steel in paper mill wet end environment, investigation of the effect of inhibitors in steam generator crevice environments, passivation of GaAs single crystals by sulphate treatment and monitoring of the kinetics of oxide growth on zirconium metals in high temperature water. The CER technique has a measurement capacity ranging from 10-9 {omega} to 105 {omega}. The lowest range of resistance is typical for metallic layers deposited on the surface in electrodeposition processes. The highest range of resistance is found for insulator type of films e.g. on zirconium metals. (author)

  10. Positioning Your Library for Solar (and Financial) Gain. Improving Energy Efficiency, Lighting, and Ventilation with Primarily Passive Techniques

    Science.gov (United States)

    Shane, Jackie

    2012-01-01

    This article stresses the importance of building design above technology as a relatively inexpensive way to reduce energy costs for a library. Emphasis is placed on passive solar design for heat and daylighting, but also examines passive ventilation and cooling, green roofs, and building materials. Passive design is weighed against technologies…

  11. Sulfur passivation for the formation of Si-terminated Al{sub 2}O{sub 3/}SiGe(0 0 1) interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, CA (United States); Tang, Kechao [Department of Materials Science and Engineering, Stanford University, CA (United States); Park, Sangwook; Kim, Hyonwoong [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Madisetti, Shailesh [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, CA (United States); Oktyabrsky, Serge [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES USA, Inc., Albany, NY (United States); Yoshida, Noami; Kachian, Jessica [Applied Materials, Inc., Santa Clara, CA (United States); Kummel, Andrew, E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States)

    2016-03-15

    Graphical abstract: - Highlights: • Effect of wet sulfur passivation on the electrical properties of Al{sub 2}O{sub 3}/SiGe(0 0 1) interfaces has been determined. • EOT of 2.1 nm has been achieved for ALD Al{sub 2}O{sub 3} deposited directly on SiGe(0 0 1) surfaces. • Sulfur passivation has been found to passivate the Al{sub 2}O{sub 3} interface with Si−O−Al bonds. • Sulfur passivation is found to significantly reduce the GeO{sub x} or Ge−O−Al content at the Al{sub 2}O{sub 3}/SiGe interface therefore improving the reliability. • Sulfur passivation extends the surface stability prior to oxide ALD to up to an hour with no dramatic change in D{sub it}, C{sub ox} or V{sub FB} of the resulting devices. - Abstract: Sulfur passivation is used to electrically and chemically passivate the silicon–germanium (SiGe) surfaces before and during the atomic layer deposition (ALD) of aluminum oxide (Al{sub 2}O{sub 3}). The electrical properties of the interfaces were examined by variable frequency capacitance–voltage (C–V) spectroscopy. Interface compositions were determined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The sulfur adsorbs to a large fraction of surface sites on the SiGe(0 0 1) surface, protecting the surface from deleterious surface reactions during processing. Sulfur passivation (a) improved the air stability of the cleaned surfaces prior to ALD, (b) increased the stability of the surface during high-temperature deposition, and (c) increased the Al{sub 2}O{sub 3} ALD nucleation density on SiGe, thereby lowering the leakage current. S passivation suppressed formation of Ge−O bonds at the interface, leaving the majority of the Al{sub 2}O{sub 3}–SiGe interface terminated with direct Si−O−Al bonding.

  12. Soil Moisture Active Passive (SMAP) Mission Level 4 Surface and Root Zone Soil Moisture (L4_SM) Product Specification Document

    Science.gov (United States)

    Reichle, Rolf H.; Ardizzone, Joseph V.; Kim, Gi-Kong; Lucchesi, Robert A.; Smith, Edmond B.; Weiss, Barry H.

    2015-01-01

    This is the Product Specification Document (PSD) for Level 4 Surface and Root Zone Soil Moisture (L4_SM) data for the Science Data System (SDS) of the Soil Moisture Active Passive (SMAP) project. The L4_SM data product provides estimates of land surface conditions based on the assimilation of SMAP observations into a customized version of the NASA Goddard Earth Observing System, Version 5 (GEOS-5) land data assimilation system (LDAS). This document applies to any standard L4_SM data product generated by the SMAP Project. The Soil Moisture Active Passive (SMAP) mission will enhance the accuracy and the resolution of space-based measurements of terrestrial soil moisture and freeze-thaw state. SMAP data products will have a noteworthy impact on multiple relevant and current Earth Science endeavors. These include: Understanding of the processes that link the terrestrial water, the energy and the carbon cycles, Estimations of global water and energy fluxes over the land surfaces, Quantification of the net carbon flux in boreal landscapes Forecast skill of both weather and climate, Predictions and monitoring of natural disasters including floods, landslides and droughts, and Predictions of agricultural productivity. To provide these data, the SMAP mission will deploy a satellite observatory in a near polar, sun synchronous orbit. The observatory will house an L-band radiometer that operates at 1.40 GHz and an L-band radar that operates at 1.26 GHz. The instruments will share a rotating reflector antenna with a 6 meter aperture that scans over a 1000 km swath.

  13. Performance analysis of passive time reversal communication technique for multipath interference in shallow sea acoustic channel

    Science.gov (United States)

    Kida, Yukihiro; Shimura, Takuya; Deguchi, Mitsuyasu; Watanabe, Yoshitaka; Ochi, Hiroshi; Meguro, Koji

    2017-07-01

    In this study, the performance of passive time reversal (PTR) communication techniques in multipath rich underwater acoustic environments is investigated. It is recognized empirically and qualitatively that a large number of multipath arrivals could generally raise the demodulation result of PTR. However, the relationship between multipath and the demodulation result is hardly evaluated quantitatively. In this study, the efficiency of the PTR acoustic communication techniques for multipath interference cancelation was investigated quantitatively by applying a PTR-DFE (decision feed-back filter) scheme to a synthetic dataset of a horizontal underwater acoustic channel. Mainly, in this study, we focused on the relationship between the signal-to-interference ratio (SIR) of datasets and the output signal-to-noise ratio (OSNR) of demodulation results by a parametric study approach. As a result, a proportional relation between SIR and OSNR is confirmed in low-SNR datasets. It was also found that PTR has a performance limitation, that is OSNR converges to a typical value depending on the number of receivers. In conclusion, results indicate that PTR could utilize the multipath efficiently and also withstand the negative effects of multipath interference at a given limitation.

  14. Antenna for passive RFID tags

    Science.gov (United States)

    Schiopu, Paul; Manea, Adrian; Cristea, Ionica; Grosu, Neculai; Vladescu, Marian; Craciun, Anca-Ileana; Craciun, Alexandru

    2015-02-01

    Minuscule devices, called RFID tags are attached to objects and persons and emit information which positioned readers may capture wirelessly. Many methods of identification have been used, but that of most common is to use a unique serial number for identification of person or object. RFID tags can be characterized as either active or passive [1,2]. Traditional passive tags are typically in "sleep" state until awakened by the reader's emitted field. In passive tags, the reader's field acts to charge the capacitor that powers the badge and this can be a combination of antenna and barcodes obtained with SAW( Surface Acoustic Wave) devices [1,2,3] . The antenna in an RFID tag is a conductive element that permits the tag to exchange data with the reader. The paper contribution are targeted to antenna for passive RFID tags. The electromagnetic field generated by the reader is somehow oriented by the reader antenna and power is induced in the tag only if the orientation of the tag antenna is appropriate. A tag placed orthogonal to the reader yield field will not be read. This is the reason that guided manufacturers to build circular polarized antenna capable of propagating a field that is alternatively polarized on all planes passing on the diffusion axis. Passive RFID tags are operated at the UHF frequencies of 868MHz (Europe) and 915MHz (USA) and at the microwave frequencies of 2,45 GHz and 5,8 GHz . Because the tags are small dimensions, in paper, we present the possibility to use circular polarization microstrip antenna with fractal edge [2].

  15. A Hybrid Islanding Detection Technique Using Average Rate of Voltage Change and Real Power Shift

    DEFF Research Database (Denmark)

    Mahat, Pukar; Chen, Zhe; Bak-Jensen, Birgitte

    2009-01-01

    The mainly used islanding detection techniques may be classified as active and passive techniques. Passive techniques don't perturb the system but they have larger nondetection znes, whereas active techniques have smaller nondetection zones but they perturb the system. In this paper, a new hybrid...... technique is proposed to solve this problem. An average rate of voltage change (passive technique) has been used to initiate a real power shift (active technique), which changes the eal power of distributed generation (DG), when the passive technique cannot have a clear discrimination between islanding...

  16. Passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solution

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Hong, E-mail: luohong@hhu.edu.cn [College of Mechanics and Materials, Hohai University, Nanjing 210098 (China); Su, Huaizhi [State Key Laboratory of Hydrology-Water Resources and Hydraulic Engineering, Hohai University, Nanjing 210098,China (China); Dong, Chaofang; Li, Xiaogang [Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083,China (China)

    2017-04-01

    Highlights: • The pH value play an important role on passive mechanism of stainless steel. • The relationship between Cr/Fe ratio within the passive film and pH is non-linear. • Better corrosion resistance due to high Cr/Fe ratio and molybdates ions. - Abstract: In this paper, the passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solutions at different pH was evaluated by potentiodynamic measurements, electrochemical impedance spectroscopy. The composition of the passive film and surface morphology were investigated by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), and scanning electron microscopy, respectively. The results reveal that metastable pitting susceptibility, stable pitting corrosion, and composition of the passive film are influenced by pH value. After long time immersion, a bilayer structure passive film can be formed in this environment. The appearance of molybdates on the outermost surface layer, further enhancing the stability of the passive film. Moreover, the good pitting corrosion resistance of 316L stainless steel in simulated concrete pore solution without carbonated is mainly due to the presence of high Cr/Fe ratio and molybdates ions within the passive film.

  17. Passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solution

    International Nuclear Information System (INIS)

    Luo, Hong; Su, Huaizhi; Dong, Chaofang; Li, Xiaogang

    2017-01-01

    Highlights: • The pH value play an important role on passive mechanism of stainless steel. • The relationship between Cr/Fe ratio within the passive film and pH is non-linear. • Better corrosion resistance due to high Cr/Fe ratio and molybdates ions. - Abstract: In this paper, the passivation and electrochemical behavior of 316L stainless steel in chlorinated simulated concrete pore solutions at different pH was evaluated by potentiodynamic measurements, electrochemical impedance spectroscopy. The composition of the passive film and surface morphology were investigated by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), and scanning electron microscopy, respectively. The results reveal that metastable pitting susceptibility, stable pitting corrosion, and composition of the passive film are influenced by pH value. After long time immersion, a bilayer structure passive film can be formed in this environment. The appearance of molybdates on the outermost surface layer, further enhancing the stability of the passive film. Moreover, the good pitting corrosion resistance of 316L stainless steel in simulated concrete pore solution without carbonated is mainly due to the presence of high Cr/Fe ratio and molybdates ions within the passive film.

  18. Effect of the electrochemical passivation on the corrosion behaviour of austenitic stainless steel

    International Nuclear Information System (INIS)

    Barbucci, A.; Delucchi, M.; Panizza, M.; Farne, G.; Cerisola, G.

    2004-01-01

    Cold rolled SS is also fruitfully used in deep drawing however the presence of scales or oxides on the surface reduces the life of the tools and emphasises creep phenomena of the material. Then a cleaning of the SS surface from these impurities is necessary. Oxides can be formed during the hot rolling preceding the cold one, or during the annealing performed between the several steps of thickness reduction. The annealing helps to decrease the work hardening occurring during the process. Normally this heat treatment is performed in reducing atmosphere of pure hydrogen (bright annealing), but even in this conditions oxides are formed on the SS surface. To avoid this uncontrolled oxide growth one method recently applied is an electrochemical cleaning performed in an electrolytic solution containing chrome, generally called electrochemical passivation. The electrochemical passivation allows the dissolution of the contaminating hard particles on the strips. Few scientific contributions are available in literature, which explain in detail the process mechanism. The aim of this work is to investigate if the electrochemical passivated surface acts in a different way with regard to corrosion phenomena with respect to conventional SS. Electrochemical measurements like polarisation, chrono-amperometries and surface analysis were used to investigate the corrosion behaviour of electrochemically passivated AISI 304L and AISI 305. The effect of some process parameters were considered, too. (authors)

  19. Effect of the electrochemical passivation on the corrosion behaviour of austenitic stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Barbucci, A.; Delucchi, M.; Panizza, M.; Farne, G.; Cerisola, G. [DICheP, University of Genova, P.le Kennedy 1, 16129 Genova (Italy)

    2004-07-01

    Cold rolled SS is also fruitfully used in deep drawing however the presence of scales or oxides on the surface reduces the life of the tools and emphasises creep phenomena of the material. Then a cleaning of the SS surface from these impurities is necessary. Oxides can be formed during the hot rolling preceding the cold one, or during the annealing performed between the several steps of thickness reduction. The annealing helps to decrease the work hardening occurring during the process. Normally this heat treatment is performed in reducing atmosphere of pure hydrogen (bright annealing), but even in this conditions oxides are formed on the SS surface. To avoid this uncontrolled oxide growth one method recently applied is an electrochemical cleaning performed in an electrolytic solution containing chrome, generally called electrochemical passivation. The electrochemical passivation allows the dissolution of the contaminating hard particles on the strips. Few scientific contributions are available in literature, which explain in detail the process mechanism. The aim of this work is to investigate if the electrochemical passivated surface acts in a different way with regard to corrosion phenomena with respect to conventional SS. Electrochemical measurements like polarisation, chrono-amperometries and surface analysis were used to investigate the corrosion behaviour of electrochemically passivated AISI 304L and AISI 305. The effect of some process parameters were considered, too. (authors)

  20. Surface dating of bricks, an application of luminescence techniques

    Science.gov (United States)

    Galli, Anna; Martini, Marco; Maspero, Francesco; Panzeri, Laura; Sibilia, Emanuela

    2014-05-01

    Luminescence techniques are a powerful tool to date archaeological ceramic materials and geological sediments. Thermoluminescence (TL) is widely used for bricks dating to reconstruct the chronology of urban complexes and the development of human cultures. However, it can sometimes be inconclusive, since TL assesses the firing period of bricks, which can be reused, even several centuries later. This problem can be circumvented using a dating technique based on a resetting event different from the last heating. OSL (Optically Stimulated Luminescence) exploits the last light exposition of the brick surface, which resets the light-sensitive electron traps until the surface is definitely shielded by mortar and superimposed bricks. This advanced application (surface dating) has been successfully attempted on rocks, marble and stone artifacts, but not yet on bricks. A recent conservation campaign at the Certosa di Pavia gave the opportunity to sample some bricks belonging to a XVII century collapsed wall, still tied to their mortars. This was an advantageous condition to test this technique, comparing the dating results with precise historical data. This attempt gave satisfactory results, allowing to identify bricks surely reused and to fully confirm that the edification of the perimetral wall occurred at the end of XVII century.

  1. Influence of the oxyanion nature of the electrolyte on the corrosion/passivation behaviour of nickel

    International Nuclear Information System (INIS)

    Trompette, J.L.; Massot, L.; Vergnes, H.

    2013-01-01

    Highlights: •Influence of oxyanion nature on the passivation of nickel. •Constitutive atoms of oxyanion incorporated into the passive film. •Evidence of direct bonding between N and Ni surface. -- Abstract: The electrochemical behaviour of nickel in the presence of various electrolyte solutions at 0.1 mol/L concentration exhibits a distinction according to the oxyanion nature of the investigated anions. Passivity is achieved with oxyanions whereas it fails with anions not containing oxygen. SIMS and XPS measurements performed from isotopic and non isotopic KNO 3 electrolytes indicate that the oxygen and nitrogen atoms from nitrate oxyanions are incorporated into the passive film during anodic polarization and with evidence of a direct bonding between nitrogen and nickel surface

  2. Advances in passive neutron instruments for safeguards use

    International Nuclear Information System (INIS)

    Menlove, H.O.; Krick, M.S.; Langner, D.G.; Miller, M.C.; Stewart, J.E.

    1994-01-01

    Passive neutron and other nondestructive assay techniques have been used extensively by the International Atomic Energy Agency to verify plutonium metal, powder, mixed oxide, pellets, rods, assemblies, scrap, and liquids. Normally, the coincidence counting rate is used to measure the 240 Pu-effective mass and gamma-ray spectrometry or mass spectrometry is used to verify the plutonium isotopic ratios. During the past few years, the passive neutron detectors have been installed in plants and operated in the unattended/continuous mode. These radiation data with time continuity have made it possible to use the totals counting rate to monitor the movement of nuclear material. Monte Carlo computer codes have been used to optimize the detector designs for specific applications. The inventory sample counter (INVS-III) has been designed to have a higher efficiency (43%) and a larger uniform counting volume than the original INVS. Data analyses techniques have been developed, including the ''known alpha'' and ''known multiplication'' methods that depend on the sample. For scrap and other impure or poorly characterized samples, we have developed multiplicity counting, initially implemented in the plutonium scrap multiplicity counter. For large waste containers such as 200-L drums, we have developed the add-a-source technique to give accurate corrections for the waste-matrix materials. This paper summarizes recent developments in the design and application of passive neutron assay systems

  3. Passive and active correlation techniques for the detection of nuclear materials

    International Nuclear Information System (INIS)

    Deyglun, Clement; Carasco, Cedric; Perot, Bertrand; Eleon, Cyrille; Sannie, Guillaume; Boudergui, Karim; Corre, Gwenole; Konzdrasovs, Vladimir; Pras, Philippe

    2013-06-01

    In the frame of the French trans-governmental R and D program against CBRN-E threats, CEA (French Alternative Energies and Atomic Energy Commission) is studying the detection of Special Nuclear Materials (SNM) by neutron interrogation with the Associated Particle Technique (APT). Coincidences including at least 3 fission neutrons or gamma rays induced by tagged neutrons are used to detect and distinguish SNM from benign materials in which lower multiplicity events of 1 or 2 particles are produced by (n, 2n) or (n, n'γ) reactions. Coincidence are detected by fast plastic scintillators and correlated with tagged neutrons to improve the signal-to-noise ratio. Dedicated data acquisition electronics (DAQ) has been developed with independent FPGA cards associated to each detector, so that the acquisition window can be opened by any of the plastic scintillators. DAQ tests in passive mode are presented, in which acquisition is triggered by the sum signal of all detectors. The system time and energy calibration and resolution are reported, as well as the qualification of numerical simulations thanks to experimental data acquired with simple setups using a 252 Cf source. Numerical studies for the design and performance of cargo container inspection are also performed with the MCNP-PoliMi computer code and the ROOT data analysis package. SNM detection in iron cargo is quite straightforward but in organic matrix, data processing will need to combine more information to evidence SNM. (authors)

  4. Surface modification technique of structural ceramics: ion implantation-assisted multi-arc ion plating

    International Nuclear Information System (INIS)

    Peng Zhijian; Miao Hezhuo; Si Wenjie; Qi Longhao; Li Wenzhi

    2003-01-01

    Through reviewing the advantages and disadvantages of the existed surface modification techniques, a new technique, ion implantation-assisted multi-arc ion plating, was proposed. Using the proposed technique, the surfaces of silicon nitride ceramics were modified by Ti ion implantation, and then three kinds of ternary coatings, (Ti,Al)N, (Ti,Zr)N and (Ti,Cr)N, were deposited on the as-implanted ceramics. The coatings prepared by this technique are of high-hardness and well adhesive to the ceramic substrates. The maximal hardness measured by nanoindentation tests is more than 40 GPa. The maximal critical load by nanoscratch tests is more than 60 mN. The cutting tools prepared by this technique with the presented coatings are of excellent performance in industrial applications. The technique may be promising for the surface modification of structural ceramics. (orig.)

  5. Introducing passive matched field acoustic tomography

    International Nuclear Information System (INIS)

    Gasparini, O.; Camporeale, C.; Crise, A.

    1997-01-01

    In acoustic tomography sea-basin environmental parameters such as temperature profiles and current-velocities are derived, when ray propagation models are adopted, by the travel time estimates relative to the identifiable ray paths. The transmitted signals are either single frequency, or impulsive, or intermittent and deterministic. When the wavelength is comparable with the scale lengths present in the propagation scenario, Matched Field Tomography (MFT) is used, entailing the consideration of waveguide modes instead of rays. A new concept in tomography is introduced in the paper, that employs passively the noise emitted by ships of opportunity (cargoes, ferries) as source signals. The passive technique is acoustic-pollution-free, and if a basin is selected in which a regular ship traffic occurs data can be received on a regular schedule, with no transmission cost. A novel array pre-processor for passive tomography is introduced, such that the signal structure at the pre-processor output in nearly the same as that obtainable in the case of single-frequency source signals

  6. Stability of passive films on amorphous Fe-Cr alloys with boron and phosphorus with impedance spectroscopy

    International Nuclear Information System (INIS)

    Virtanen, S.; Elsener, B.; Boehni, H.

    1989-01-01

    The mechanism of the passivation and the effect of metalloids on the stability of the passive films of amorphous Fe-Cr-(B,P,C) alloys has been investigated by polarization measurements, impedance spectroscopy and potential decay measurements. The results show that phosphorus facilitates the active/passive-transition by forming a porous iron-phosphate pre-passive layer on the alloy surface in the active range of the dissolution. This layer blocks the active sites of the surface and accelerates the cathodic H 2 -evolution reaction. The formation of the passivating chromium oxide layer takes place in the pores of this layer. In the passive range of the alloys oxidized phosphorus gets incorporated in the outer layer of the passive film. The presence of oxidized phosphorus as PO 4 3- anions in the passive film increases the localized corrosion resistance in Cl-containing solutions. The effect of the incorporated phosphates in the passive film is discussed with respect to the bipolar fixed-charge induced passivity model. The phosphates make the outer layer of the passive film cation-selective and thus hinder the penetration of the chlorides into the film. The oxidized boron species cannot change the ion-selectivity of the film; instead of this they negatively affect the stability of the passive film. (author) 18 refs., 9 figs., 3 tabs

  7. Structural and optical properties of surface-hydrogenated silicon nanocrystallites prepared by reactive pulsed laser ablation

    International Nuclear Information System (INIS)

    Makino, Toshiharu; Inada, Mitsuru; Umezu, Ikurou; Sugimura, Akira

    2005-01-01

    Pulsed laser ablation (PLA) in an inert background gas is a promising technique for preparing Si nanoparticles. Although an inert gas is appropriate for preparing pure material, a reactive background gas can be used to prepare compound nanoparticles. We performed PLA in hydrogen gas to prepare hydrogenated silicon nanoparticles. The mean diameter of the primary particles measured using transmission electron microscopy was approximately 5 nm. The hydrogen content in the deposits was very high and estimated to be about 20%. The infrared absorption corresponding to Si-H n (n = 1, 2, 3) bonds on the surface were observed at around 2100 cm -1 . The Raman scattering peak corresponding to crystalline Si was observed, and that corresponding to amorphous Si was negligibly small. These results indicate that the Si nanoparticles were not an alloy of Si and hydrogen but Si nanocrystallite (nc-Si) covered by hydrogen or hydrogenated amorphous silicon. This means that PLA in reactive H 2 gas is a promising technique for preparing surface passivated nc-Si. The deposition mechanism and optical properties of the surface passivated silicon nanocrystallites are discussed

  8. Passive Cooling of buildings by night-time ventilation

    DEFF Research Database (Denmark)

    Artmann, Nikolai; Manz, Heinrich; Heiselberg, Per

    coefficients below about 4 W/m2K. Heat transfer during night-time ventilation in case of mixing and displacement ventilation was investigated in a full scale test room at Aalborg University. In the experiments the temperature efficiency of the ventilation was determined. Based on the previous re-sults a method...... are still hesitant to apply passive cooling techniques. As night-time ventilation is highly dependent on climatic conditions, a method for quantifying the climatic cooling potential was developed and the impact of climate warming was investigated. Although a clear decrease was found, significant potential...... will remain, especially if night-time ventilation is applied in combination with other cooling methods. Building energy simulations showed that the performance of night-time ventilation is also affected by the heat transfer at internal room surfaces, as the cooling effect is very limited for heat transfer...

  9. Studies of surface loss of materials by TLA technique

    International Nuclear Information System (INIS)

    Chowdhury, D.P.

    2005-01-01

    Thin Layer Activation technique is very sensitive and useful for the study of surface wear, corrosion and erosion in various machine or engineering components. It is routinely used in automobiles, power and nuclear and oil industries for on-line monitoring and testing. Its potential in application to bio-engineering material is reported. One of the limitations of the technique is the availability of accelerator

  10. MULTIPLE IMAGING TECHNIQUES DEMONSTRATE THE MANIPULATION OF SURFACES TO REDUCE BACTERIAL CONTAMINATION

    Science.gov (United States)

    Surface imaging techniques were combined to determine appropriate manipulation of technologically important surfaces for commercial applications. Stainless steel surfaces were engineered to reduce bacterial contamination, biofilm formation, and corrosion during product processing...

  11. Investigation of passivating films on Li-electrode by the method of photoelectronic emission

    International Nuclear Information System (INIS)

    Nimon, E.S.; Churikov, A.V.; Gamayunova, I.M.; L'vov, A.L.

    1995-01-01

    Spectral dependences of photoeffect under conditions of pulsed illumination by visible and near IR radiation of Li-electrode surface in propylene carbonate and thionyl chloride base solutions have been studied. Photoemission of electrons from lithium to passivating films on its surface is the primary stage of the cathode photoeffect detected. The method of electron photoemission is used to obtain information on the composition and characteristics of the passivating films. 21 refs., 7 figs., 1 tab

  12. Determination of equilibrium factor between radon and its progeny using surface barrier detector for various shapes of passive radon dosimeters

    Energy Technology Data Exchange (ETDEWEB)

    Jamil, K. [PINSTECH, Islamabad (Pakistan). Environ. Radiat. Group; Fazal-ur-Rehman [PINSTECH, Islamabad (Pakistan). Environ. Radiat. Group; Ali, S. [PINSTECH, Islamabad (Pakistan). Environ. Radiat. Group; Khan, H.A. [PINSTECH, Islamabad (Pakistan). Environ. Radiat. Group

    1997-03-21

    In the field of radon dosimetry, it is customary to measure radon ({sup 222}Rn) concentration while potential health hazard is due to the radon short-lived progeny. When radon is in secular equilibrium, the measured activity of radon equals the activity of radon`s progeny. However, in practical cases an inequilibrium between radon and its progeny exists which is measured in terms of the equilibrium factor. To determine the equilibrium factor between radon and its progeny in a closed environment various shapes of passive dosimeters based upon solid state nuclear track detectors (SSNTDs) are employed. In order to observe the dependence of equilibrium factor upon shapes or effective volumes, experiments have been performed replacing the SSNTDs with a surface barrier detector in Karlsruhe diffusion chamber, pen-type and box-type dosimeters. Using the collected alpha spectra, the equilibrium factor has been determined for a radon-air mixture in a custom designed radon chamber simulating a closed environment of a room. The results show that the radon equilibrium factor is about 0.20 for different shapes of dosimeters studied in this research. It is concluded that the determination of equilibrium factor between radon and its progeny does not depend upon effective volume or shape of the passive dosimeters using alpha spectroscopic data acquired by surface barrier detector. (orig.).

  13. Determination of equilibrium factor between radon and its progeny using surface barrier detector for various shapes of passive radon dosimeters

    International Nuclear Information System (INIS)

    Jamil, K.; Fazal-ur-Rehman; Ali, S.; Khan, H.A.

    1997-01-01

    In the field of radon dosimetry, it is customary to measure radon ( 222 Rn) concentration while potential health hazard is due to the radon short-lived progeny. When radon is in secular equilibrium, the measured activity of radon equals the activity of radon's progeny. However, in practical cases an inequilibrium between radon and its progeny exists which is measured in terms of the equilibrium factor. To determine the equilibrium factor between radon and its progeny in a closed environment various shapes of passive dosimeters based upon solid state nuclear track detectors (SSNTDs) are employed. In order to observe the dependence of equilibrium factor upon shapes or effective volumes, experiments have been performed replacing the SSNTDs with a surface barrier detector in Karlsruhe diffusion chamber, pen-type and box-type dosimeters. Using the collected alpha spectra, the equilibrium factor has been determined for a radon-air mixture in a custom designed radon chamber simulating a closed environment of a room. The results show that the radon equilibrium factor is about 0.20 for different shapes of dosimeters studied in this research. It is concluded that the determination of equilibrium factor between radon and its progeny does not depend upon effective volume or shape of the passive dosimeters using alpha spectroscopic data acquired by surface barrier detector. (orig.)

  14. Comparison of enzyme-linked immunosorbent assay, radioimmunoassay, complement fixation, anticomplement immunofluorescence and passive haemaglutination techniques for detecting cytomegalovirus IgG antibody

    Energy Technology Data Exchange (ETDEWEB)

    Booth, J C; Hannington, G; Bakir, T M.F.; Stern, H; Kangro, H; Griffiths, P D; Heath, R B [Saint George' s Hospital Medical School, London (UK); Saint Bartholomew' s Hospital, London (UK))

    1982-12-01

    The radioimmunoassay (RIA) and enzyme-linked immunosorbent assay (ELISA) techniques were found to be comparable in sensitivity and specificity for detecting cytomegalovirus IgG antibody, and 10 to 100 times more sensitive than complement-fixation (CF), anticomplement immunofluorescence (ACIF) and passive haemagglutination (PHA). In screening tests for antibody, the frequency of false-positive and -negative results was 0.6% for RIA and ELISA, 1.5% for CF, 1.6% for ACIF and 3.6% for PHA. PHA was the least satisfactory test, largely because of technical problems.

  15. Wind Tunnel Investigation of Passive Vortex Control and Vortex-Tail Interactions on a Slender Wing at Subsonic and Transonic Speeds

    Science.gov (United States)

    Erickson, Gary E.

    2013-01-01

    A wind tunnel experiment was conducted in the NASA Langley 8-Foot Transonic Pressure Tunnel to determine the effects of passive porosity on vortex flow interactions about a slender wing configuration at subsonic and transonic speeds. Flow-through porosity was applied in several arrangements to a leading-edge extension, or LEX, mounted to a 65-degree cropped delta wing as a longitudinal instability mitigation technique. Test data were obtained with LEX on and off in the presence of a centerline vertical tail and twin, wing-mounted vertical fins to quantify the sensitivity of the aerodynamics to tail placement and orientation. A close-coupled canard was tested as an alternative to the LEX as a passive flow control device. Wing upper surface static pressure distributions and six-component forces and moments were obtained at Mach numbers of 0.50, 0.85, and 1.20, unit Reynolds number of 2.5 million, angles of attack up to approximately 30 degrees, and angles of sideslip to +/-8 degrees. The off-surface flow field was visualized in cross planes on selected configurations using a laser vapor screen flow visualization technique. Tunnel-to-tunnel data comparisons and a Reynolds number sensitivity assessment were also performed. 15.

  16. Passivation of laser-treated nickel aluminum bronze as measured by electrochemical impedance spectroscopy

    International Nuclear Information System (INIS)

    Klassen, R.D.; Hyatt, C.V.; Roberge, P.R.

    2000-01-01

    Electrochemical impedance spectroscopy was used to assess the corrosion behavior of the weld zones and surface conditions of a laser-clad nickel aluminum bronze immersed in a 3.5% neutral saline solution. The zones and conditions examined included: (i) as-cast base material; (ii) laser-clad material with the high temperature oxide from welding intact; (iii) polished laser-clad material and (iv) specimens representative of just the as-deposited and reheated zones of the laser-clad surface. A pseudo steady-state level of passivation was reached in all the samples within 40 hours. The reheated zone passivated more slowly than the as-deposited region and both weld zones passivated more quickly than the base material. Electrochemical impedance data illustrated a transition during the passivation process of the polished specimens that is consistent with the development of a film layer that restricted mass transfer. The welding oxide from the laser treatment immediately behaved as a passivation film that was indistinguishable from that which eventually develops on polished specimens. (author)

  17. Kinetics of passivation of a nickel-base alloy in high temperature water

    Energy Technology Data Exchange (ETDEWEB)

    Machet, A. [Laboratoire de Physico-Chimie des Surfaces, CNRS-ENSCP (UMR 7045), Ecole Nationale Superieure de Chimie de Paris, Universite Pierre et Marie Curie, F-75231 Paris cedex 05 (France)]|[Framatome ANP, Tour AREVA, F-92084 Paris-la-Defense (France); Galtayries, A.; Zanna, S.; Marcus, P. [Laboratoire de Physico-Chimie des Surfaces, CNRS-ENSCP (UMR 7045), Ecole Nationale Superieure de Chimie de Paris, Universite Pierre et Marie Curie, F-75231 Paris cedex 05 (France); Jolivet, P.; Scott, P. [Framatome ANP, Tour AREVA, F-92084 Paris-la-Defense (France); Foucault, M.; Combrade, P. [Framatome ANP, Centre Technique, F-71205 Le Creusot (France)

    2004-07-01

    The kinetics of passivation and the composition of the surface oxide layer, in high temperature and high pressure water, of a nickel-chromium-iron alloy (Alloy 600) have been investigated by X-ray Photoelectron Spectroscopy (XPS). The samples have been exposed for short (0.4 - 8.2 min) and longer (0 - 400 hours) time periods to high temperature (325 deg. C) and high pressure water (containing boron and lithium) under controlled hydrogen pressure. The experiments were performed in two types of autoclaves: a novel autoclave dedicated to short time periods and a classic static autoclave for the longer exposures. In the initial stage of passivation, a continuous ultra-thin layer of chromium oxide (Cr{sub 2}O{sub 3}) is rapidly formed on the surface with an external layer of chromium hydroxide. For longer times of passivation, the oxide layer is in a duplex form with an internal chromium oxide layer and an external layer of nickel hydroxide. The growth of the internal Cr{sub 2}O{sub 3} oxide layer has been fitted by three classical models (parabolic, logarithmic and inverse logarithmic laws) for the short passivation times, and the growth curves have been extrapolated to longer passivation periods. The comparison with the experimental results reveals that the kinetics of passivation of Alloy 600 in high temperature and high pressure water, for passivation times up to 400 hours, is well fitted by a logarithmic growth law. (authors)

  18. Kinetics of passivation of a nickel-base alloy in high temperature water

    International Nuclear Information System (INIS)

    Machet, A.; Galtayries, A.; Zanna, S.; Marcus, P.; Jolivet, P.; Scott, P.; Foucault, M.; Combrade, P.

    2004-01-01

    The kinetics of passivation and the composition of the surface oxide layer, in high temperature and high pressure water, of a nickel-chromium-iron alloy (Alloy 600) have been investigated by X-ray Photoelectron Spectroscopy (XPS). The samples have been exposed for short (0.4 - 8.2 min) and longer (0 - 400 hours) time periods to high temperature (325 deg. C) and high pressure water (containing boron and lithium) under controlled hydrogen pressure. The experiments were performed in two types of autoclaves: a novel autoclave dedicated to short time periods and a classic static autoclave for the longer exposures. In the initial stage of passivation, a continuous ultra-thin layer of chromium oxide (Cr 2 O 3 ) is rapidly formed on the surface with an external layer of chromium hydroxide. For longer times of passivation, the oxide layer is in a duplex form with an internal chromium oxide layer and an external layer of nickel hydroxide. The growth of the internal Cr 2 O 3 oxide layer has been fitted by three classical models (parabolic, logarithmic and inverse logarithmic laws) for the short passivation times, and the growth curves have been extrapolated to longer passivation periods. The comparison with the experimental results reveals that the kinetics of passivation of Alloy 600 in high temperature and high pressure water, for passivation times up to 400 hours, is well fitted by a logarithmic growth law. (authors)

  19. Recent Developments in SOBEK Passive Sonar Technology

    NARCIS (Netherlands)

    Hunter, A.J.; Fillinger, L.; Zampolli, M.; Clarijs, M.C.

    2012-01-01

    Surveillance of waterside locations for protection against threats from small fast surface vessels and underwater intruders is a very relevant but challenging problem. For this reason, the Netherlands Organisation for Applied Scientific Research (TNO) is developing SOBEK – a family of passive sonar

  20. Photo-stability and time-resolved photoluminescence study of colloidal CdSe/ZnS quantum dots passivated in Al{sub 2}O{sub 3} using atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Chih-Yi [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Mao, Ming-Hua, E-mail: mhmao@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2016-08-28

    We report photo-stability enhancement of colloidal CdSe/ZnS quantum dots (QDs) passivated in Al{sub 2}O{sub 3} thin film using the atomic layer deposition (ALD) technique. 62% of the original peak photoluminescence (PL) intensity remained after ALD. The photo-oxidation and photo-induced fluorescence enhancement effects of both the unpassivated and passivated QDs were studied under various conditions, including different excitation sources, power densities, and environment. The unpassivated QDs showed rapid PL degradation under high excitation due to strong photo-oxidation in air while the PL intensity of Al{sub 2}O{sub 3} passivated QDs was found to remain stable. Furthermore, recombination dynamics of the unpassivated and passivated QDs were investigated by time-resolved measurements. The average lifetime of the unpassivated QDs decreases with laser irradiation time due to photo-oxidation. Photo-oxidation creates surface defects which reduces the QD emission intensity and enhances the non-radiative recombination rate. From the comparison of PL decay profiles of the unpassivated and passivated QDs, photo-oxidation-induced surface defects unexpectedly also reduce the radiative recombination rate. The ALD passivation of Al{sub 2}O{sub 3} protects QDs from photo-oxidation and therefore avoids the reduction of radiative recombination rate. Our experimental results demonstrated that passivation of colloidal QDs by ALD is a promising method to well encapsulate QDs to prevent gas permeation and to enhance photo-stability, including the PL intensity and carrier lifetime in air. This is essential for the applications of colloidal QDs in light-emitting devices.

  1. Effect of surface pre-treatments on biocompatibility of magnesium.

    Science.gov (United States)

    Lorenz, Carla; Brunner, Johannes G; Kollmannsberger, Philip; Jaafar, Leila; Fabry, Ben; Virtanen, Sannakaisa

    2009-09-01

    This study reports the influence of Mg surface passivation on the survival rate of human HeLa cells and mouse fibroblasts in cell culture experiments. Polished samples of commercially pure Mg show high reactivity in the cell culture medium, leading to a pH shift in the alkaline direction, and therefore cell adhesion and survival is strongly impaired. Passivation of the Mg surface in 1M NaOH can strongly enhance cell survival. The best initial cell adhesion is observed for Mg samples incubated in simulated body fluid (M-SBF), which leads to the formation of a biomimetic, amorphous Ca/Mg-phosphate layer with high surface roughness. This surface layer, however, passivates and seals the Mg surface only partially. Subsequent Mg dissolution leads to a significantly stronger pH increase compared to NaOH-passivated samples, which prevents long-term cell survival. These results demonstrate that surface passivation with NaOH and M-SBF together with the associated changes of surface reactivity, chemistry and roughness provide a viable strategy to facilitate cell survival on otherwise non-biocompatible Mg surfaces.

  2. Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

    Science.gov (United States)

    Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

    2017-12-01

    Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

  3. Surface passivation and carrier selectivity of the thermal-atomic-layer-deposited TiO2 on crystalline silicon

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym; Schüler, Nadine; Shkondin, Evgeniy

    2017-01-01

    Here, we demonstrate the use of an ultrathin TiO2 film as a passivating carrier-selective contact for silicon photovoltaics. The effective lifetime, surface recombination velocity, and diode quality dependence on TiO2 deposition temperature with and without a thin tunneling oxide interlayer (SiO2...... heterojunction with optimized photovoltage, interface quality, and electron extraction to maximize the photovoltage of TiO2–Si heterojunction photovoltaic cells are formulated. Diode behaviour was analysed with the help of experimental, analytical, and simulation methods. It is predicted that TiO2 with a high...

  4. Oxidation of hydrogen-passivated silicon surfaces by scanning near-field optical lithography using uncoated and aluminum-coated fiber probes

    DEFF Research Database (Denmark)

    Madsen, Steen; Bozhevolnyi, Sergey I.; Birkelund, Karen

    1997-01-01

    Optically induced oxidation of hydrogen-passivated silicon surfaces using a scanning near-field optical microscope was achieved with both uncoated and aluminum-coated fiber probes. Line scans on amorphous silicon using uncoated fiber probes display a three-peak profile after etching in potassium...... hydroxide. Numerical simulations of the electromagnetic field around the probe-sample interaction region are used to explain the experimental observations. With an aluminum-coated fiber probe, lines of 35 nm in width were transferred into the amorphous silicon layer. (C) 1997 American Institute of Physics....

  5. Surface engineering with ion beams: from self-organized nanostructures to ultra-smooth surfaces

    International Nuclear Information System (INIS)

    Frost, F.; Ziberi, B.; Schindler, A.; Rauschenbach, B.

    2008-01-01

    Low-energy ion-beam sputtering, i.e. the removal of atoms from a surface due to the impact of energetic ions or atoms, is an inherent part of numerous surface processing techniques. Besides the actual removal of material, this surface erosion process often results in a pronounced alteration of the surface topography. Under certain conditions, sputtering results in the formation of well-ordered patterns. This self-organized pattern formation is related to a surface instability between curvature-dependent sputtering that roughens the surface and smoothing by different surface relaxation mechanisms. If the evolution of surface topography is dominated by relaxation mechanisms, surface smoothing can occur. In this presentation the current status of self-organized pattern formation and surface smoothing by low-energy ion-beam erosion of Si and Ge is summarized. In detail it will be shown that a multitude of patterns as well as ultra-smooth surfaces can develop, particularly on Si surfaces. Additionally, the most important experimental parameters that control these processes are discussed. Finally, examples are given for the application of low-energy ion beams as a novel approach for passive optical device engineering for many advanced optical applications. (orig.)

  6. X-ray photoelectron spectroscopy and Auger electron spectroscopy studies on the passivation behavior of plasma-nitrided low alloy steel in nitric acid

    Energy Technology Data Exchange (ETDEWEB)

    Chyou, S.D.; Shih, H.C. (Dept. of Materials Science and Engineering, National Tsing Hua Univ., Hsinchu (Taiwan))

    1991-12-14

    Nitrided SAE 4140 steel has been passivated by concentrated nitric acid. The resulting film was characterized using a combination of surface-analytical techniques, such as X-ray photoelectron spectroscopy (XPS) to evaluate the chemical composition of the passive film. Auger electron spectroscopy (AES) combined with ion etching was used to determine the composition depth profiles of nitrided surface. It was found that preferential dissolution of iron leads to enhanced nitrogen and chromium concentrations within the oxynitrided layer. A dense protective oxynitrided layer was found to be formed on the nitrided surface when the concentration of nitric acid was as high as 8 M. The results of X-ray diffraction, XPS and AES analyses conclude that the protective nitride layer is composed of (Fe,Cr){sub 4}N, (Fe,Cr){sub 2-3}N and CrN in the inner layer, Fe{sub 2}O{sub 3}, Cr{sub 2}O{sub 3} and remnant nitrides in the middle layer and nitrides accompanying Cr(OH){sub 3}.H{sub 2}O and {gamma}'-FeOOH in the outermost layer. (orig.).

  7. An Evaluation of Antarctica as a Calibration Target for Passive Microwave Satellite Missions with Climate Data Record Applications

    Science.gov (United States)

    Kim, Edward

    2011-01-01

    Passive microwave remote sensing at L-band (1.4 GHz) is sensitive to soil moisture and sea surface salinity, both important climate variables. Science studies involving these variables can now take advantage of new satellite L-band observations. The first mission with regular global passive microwave observations at L-band is the European Space Agency's Soil Moisture and Ocean Salinity (SMOS), launched November, 2009. A second mission, NASA's Aquarius, was launched June, 201 I. A third mission, NASA's Soil Moisture Active Passive (SMAP) is scheduled to launch in 2014. Together, these three missions may provide a decade-long data record-provided that they are intercalibrated. The intercalibration is best performed at the radiance (brightness temperature) level, and Antarctica is proving to be a key calibration target. However, Antarctica has thus far not been fully characterized as a potential target. This paper will present evaluations of Antarctica as a microwave calibration target for the above satellite missions. Preliminary analyses have identified likely target areas, such as the vicinity of Dome-C and larger areas within East Antarctica. Physical sources of temporal and spatial variability of polar firn are key to assessing calibration uncertainty. These sources include spatial variability of accumulation rate, compaction, surface characteristics (dunes, micro-topography), wind patterns, and vertical profiles of density and temperature. Using primarily SMOS data, variability is being empirically characterized and attempts are being made to attribute observed variability to physical sources. One expected outcome of these studies is the potential discovery of techniques for remotely sensing--over all of Antarctica-parameters such as surface temperature.

  8. Prolonged passive static stretching-induced innervation zone shift in biceps brachii.

    Science.gov (United States)

    Ye, Xin; Beck, Travis W; Wages, Nathan P

    2015-05-01

    The purpose of this study was to examine the influence of a bout of repeated and prolonged passive static stretching on the innervation zone (IZ) location of the human biceps brachii muscle. Eleven men performed 12 sets of 100-s passive stretches on their biceps brachii. Before (Pre) and immediately after (Post) the stretching intervention, isometric strength was tested during the maximal voluntary contractions (MVCs) of the forearm flexors. The subjects also performed several separate isometric forearm flexion muscle actions at 30%, 50%, and 70% of their predetermined MVCs for examining the locations of the IZ at different contraction intensities. The IZ was identified through multi-channel surface electromyographic (EMG) recordings from a linear electrode array. The stretching intervention induced an average of 10% isometric strength loss for the forearm flexors (mean±SD: Pre-MVC vs. Post-MVC=332.12±59.40 N vs. 299.53±70.51 N; p<0.001). In addition, the average IZ shift was nearly 4.5 mm in average in the proximal direction. However, this shift was not specific to the contraction intensity. We believe that the IZ shift was caused by the elongation of the entire muscle-tendon unit in the proximal direction. Therefore, caution should be taken when using surface EMG technique to examine possible changes in the EMG variables after a stretching protocol, as these variables can be contaminated by the shift of the IZ.

  9. Electronic structure of Bi lines on clean and H-passivated Si(100)

    International Nuclear Information System (INIS)

    Javorsky, Jakub; SetvIn, Martin; Miki, Kazushi; Owen, James Hugh Gervase

    2010-01-01

    By means of scanning tunnelling microscopy and spectroscopy, we have investigated the electronic structure of Bi nanolines on clean and H-passivated Si(100) surfaces. Maps of the local density of states (LDOS) images of the Bi nanolines are presented for the first time. The spectra obtained for nanolines on a clean Si surface and the LDOS images agree with ab initio predicted spectra for the Haiku structure. For nanolines on a H-passivated surface, the spectra obtained suggest that the Bi nanoline may locally pin the surface Fermi level, and the LDOS images taken at low bias show a distribution of states different to what was expected at the Bi nanolines. The results are discussed with respect to use of the nanolines as atomic wire interconnections.

  10. Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires.

    Science.gov (United States)

    Yang, Zai-Xing; Yin, Yanxue; Sun, Jiamin; Bian, Luozhen; Han, Ning; Zhou, Ziyao; Shu, Lei; Wang, Fengyun; Chen, Yunfa; Song, Aimin; Ho, Johnny C

    2018-05-02

    Recently, owing to the large surface-area-to-volume ratio of nanowires (NWs), manipulation of their surface states becomes technologically important and being investigated for various applications. Here, an in-situ surfactant-assisted chemical vapor deposition is developed with various chalcogens (e.g. S, Se and Te) as the passivators to enhance the NW growth and to manipulate the controllable p-n conductivity switching of fabricated NW devices. Due to the optimal size effect and electronegativity matching, Se is observed to provide the best NW surface passivation in diminishing the space charge depletion effect induced by the oxide shell and yielding the less p-type (i.e. inversion) or even insulating conductivity, as compared with S delivering the intense p-type conductivity for thin NWs with the diameter of ~30 nm. Te does not only provide the surface passivation, but also dopes the NW surface into n-type conductivity by donating electrons. All of the results can be extended to other kinds of NWs with similar surface effects, resulting in careful device design considerations with appropriate surface passivation for achieving the optimal NW device performances.

  11. Probing the internal structure of the asteriod Didymoon with a passive seismic investigation

    Science.gov (United States)

    Murdoch, N.; Hempel, S.; Pou, L.; Cadu, A.; Garcia, R. F.; Mimoun, D.; Margerin, L.; Karatekin, O.

    2017-09-01

    Understanding the internal structure of an asteroid has important implications for interpreting its evolutionary history, for understanding its continuing geological evolution, and also for asteroid deflection and in-situ space resource utilisation. Given the strong evidence that asteroids are seismically active, an in-situ passive seismic experiment could provide information about the asteroid surface and interior properties. Here, we discuss the natural seismic activity that may be present on Didymoon, the secondary component of asteroid (65803) Didymos. Our analysis of the tidal stresses in Didymoon shows that tidal quakes are likely to occur if the secondary has an eccentric orbit. Failure occurs most easily at the asteroid poles and close to the surface for both homogeneous and layered internal structures. Simulations of seismic wave propagation in Didymoon show that the seismic moment of even small meteoroid impacts can generate clearly observable body and surface waves if the asteroid's internal structure is homogeneous. The presence of a regolith layer over a consolidated core can result in the seismic energy becoming trapped in the regolith due to the strong impedance contrast at the regolith-core boundary. The inclusion of macro-porosity (voids) further complexifies the wavefield due to increased scattering. The most prominent seismic waves are always found to be those traveling along the surface of the asteroid and those focusing in the antipodal point of the seismic source. We find also that the waveforms and ground acceleration spectra allow discrimination between the different internal structure models. Although the science return of a passive seismic experiment would be enhanced by having multiple seismic stations, one single seismic station can already vastly improve our knowledge about the seismic environment and sub-surface structure of an asteroid. We describe several seismic measurement techniques that could be applied in order to study the

  12. Passive New UV Polarimeter for Remote Surface and Atmospheric Sensing, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Our imaging polarimeter concept makes available for the first time, the passive remote imagery of all four Stokes vector components at UV wavelengths shorter than...

  13. A surface acoustic wave passive and wireless sensor for magnetic fields, temperature, and humidity

    KAUST Repository

    Li, Bodong; Yassine, Omar; Kosel, Jü rgen

    2015-01-01

    In this paper, we report an integrated single-chip surface acoustic wave sensor with the capability of measuring magnetic field, temperature, and humidity. The sensor is fabricated using a thermally sensitive LiNbO3 substrate, a humidity sensitive hydrogel coating, and a magnetic field sensitive impedance load. The sensor response to individually and simultaneously changing magnetic field, temperature and humidity is characterized by connecting a network analyzer directly to the sensor. Analytical models for each measurand are derived and used to compensate noise due to cross sensitivities. The results show that all three measurands can be monitored in parallel with sensitivities of 75 ppm/°C, 0.13 dB/%R.H. (at 50%R.H.), 0.18 dB/Oe and resolutions of 0.1 °C, 0.4%R.H., 1 Oe for temperature, humidity and magnetic field, respectively. A passive wireless measurement is also conducted on a current line using, which shows the sensors capability to measure both temperature and current signals simultaneously.

  14. Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation.

    Science.gov (United States)

    Zhou, D; Xu, T; Lambert, Y; Cristini-Robbe; Stiévenard, D

    2015-12-01

    The light absorption of polysilicon planar junctions can be improved using nanostructured top surfaces due to their enhanced light harvesting properties. Nevertheless, associated with the higher surface, the roughness caused by plasma etching and defects located at the grain boundary in polysilicon, the concentration of the recombination centers increases, leading to electrical performance deterioration. In this work, we demonstrate that wet oxidation combined with hydrogen passivation using SiN(x):H are the key technological processes to significantly decrease the surface recombination and improve the electrical properties of nanostructured n(+)-i-p junctions. Nanostructured surface is fabricated by nanosphere lithography in a low-cost and controllable approach. Furthermore, it has been demonstrated that the successive annealing of silicon nitride films has significant effect on the passivation quality, resulting in some improvements on the efficiency of the Si nanostructure-based solar cell device.

  15. Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation

    International Nuclear Information System (INIS)

    Fu, S.-I.; Lai, P.-H.; Tsai, Y.-Y.; Hung, C.-W.; Yen, C.-H.; Cheng, S.-Y.; Liu, W.-C.

    2006-01-01

    An interesting two-step passivation (with ledge structure and sulphide based chemical treatment) on base surface, for the first time, is demonstrated to study the temperature-dependent DC characteristics and noise performance of an InGaP/GaAs heterojunction bipolar transistor (HBT). Improved transistor behaviors on maximum current gain β max , offset voltage ΔV CE , and emitter size effect are obtained by using the two-step passivation. Moreover, the device with the two-step passivation exhibits relatively temperature-independent and improved thermal stable performances as the temperature is increased. Therefore, the two-step passivationed device can be used for high-temperature and low-power electronics applications

  16. A scanning fluid dynamic gauging technique for probing surface layers

    International Nuclear Information System (INIS)

    Gordon, Patrick W; Chew, Y M John; Wilson, D Ian; Brooker, Anju D M; York, David W

    2010-01-01

    Fluid dynamic gauging (FDG) is a technique for measuring the thickness of soft solid deposit layers immersed in a liquid environment, in situ and in real time. This paper details the performance of a novel automated, scanning FDG probe (sFDG) which allows the thickness of a sample layer to be monitored at several points during an experiment, with a resolution of ±5 µm. Its application is demonstrated using layers of gelatine, polyvinyl alcohol (PVA) and baked tomato purée deposits. Swelling kinetics, as well as deformation behaviour—based on knowledge of the stresses imposed on the surface by the gauging flow—can be determined at several points, affording improved experimental data. The use of FDG as a surface scanning technique, operating as a fluid mechanical analogue of atomic force microscopy on a millimetre length scale, is also demonstrated. The measurement relies only on the flow behaviour, and is thus suitable for use in opaque fluids, does not contact the surface itself and does not rely on any specific physical properties of the surface, provided it is locally stiff

  17. Nature of bonding forces between two hydrogen-passivated silicon wafers

    DEFF Research Database (Denmark)

    Stokbro, Kurt; Nielsen, E.; Hult, E.

    1998-01-01

    The nature and strength of the bonding forces between two II-passivated Si surfaces are studied with the density-functional theory, using an approach based on recent theoretical advances in understanding of van der Waals forces between two surfaces. Contrary to previous suggestions of van der Waals...

  18. Application of the thermal plasma technique in the treatment of stone surfaces

    International Nuclear Information System (INIS)

    Gonzalez A, Z.I.

    2000-01-01

    The stone materials which form part of the cultural heritage of Mexico, are degraded under the united action of water, atmospheric gases, air pollution, temperature changes and the microorganisms action; provoking on the stone: fissures, crevices, scalings, fragmentations, pulverizations, etc. Therefore, the purpose of this work is to study the possibilities to apply a protective coating on the stone surfaces, previously clean and consolidated, through the thermal plasma technique. The purpose is to analyse the physical and chemical properties of three types of stone materials: quarry, tezontle and chiluca, usually used in constructions of cultural interest such as: historical monuments, churches, sculptures, etc., before and after to be submitted to the action of thermal plasma in order to examine the feasibility in the use of this coating technique in this type of applications. The application of conventional techniques to determine: porosity, density, absorption, low pressure water absorption and crystallization by total immersion of nuclear techniques such as: neutron activation analysis, x-ray diffraction and scanning electron microscopy as well as of instrumental techniques: optical microscopy, mechanical assays of compression, flexure and surface area calculations, allowed to know the chemical and physical properties of the stone material before and after to be treated through the thermal plasma technique, projecting quartz on the stones surface at different distances and current intensity and showing the effect caused by the modifications or surface alterations present by cause of the application of that coating. the obtained results provide a general panorama of the application of this technique as an alternative to the maintenance of the architectural inheritance built in stone. (Author)

  19. Passivation of nanocrystalline TiO2 junctions by surface adsorbed phosphinate amphiphiles enhances the photovoltaic performance of dye sensitized solar cells

    KAUST Repository

    Wang, Mingkui

    2009-01-01

    We report a new class of molecular insulators that electronically passivate the surface of nanocrystalline titania films for high performance dye sensitized solar cells (DSC). Using electrical impedance measurements we demonstrate that co-adsorption of dineohexyl bis-(3,3-dimethyl-butyl)-phosphinic acid (DINHOP), along with the amphiphilic ruthenium sensitizer Z907Na increased substantially the power output of the cells mainly due to a retardation of interfacial recombination of photo-generated charge carriers. The use of phosphinates as anchoring groups opens up new avenues for modification of the surface by molecular insulators, sensitizers and other electro-active molecules to realize the desired optoelectronic performance of devices based on oxide junctions. © 2009 The Royal Society of Chemistry.

  20. Synchrotron x-ray reflectivity study of oxidation/passivation of copper and silicon

    International Nuclear Information System (INIS)

    Chu, Y.; Nagy, Z.; Parkhutik, V.; You, H.

    1999-01-01

    Synchrotron x-ray-scattering technique studies of copper and silicon electrochemical interfaces are reported. These two examples illustrate the application of synchrotron x-ray techniques for oxidation, passivation, and dissolution of metals and semiconductors

  1. Synchrotron x-ray reflectivity study of oxidation/passivation of copper and silicon.

    Energy Technology Data Exchange (ETDEWEB)

    Chu, Y.; Nagy, Z.; Parkhutik, V.; You, H.

    1999-07-21

    Synchrotron x-ray-scattering technique studies of copper and silicon electrochemical interfaces are reported. These two examples illustrate the application of synchrotron x-ray techniques for oxidation, passivation, and dissolution of metals and semiconductors.

  2. Variations in global land surface phenology: a comparison of satellite optical and passive microwave data

    Science.gov (United States)

    Tong, X.; Tian, F.; Brandt, M.; Zhang, W.; Liu, Y.; Fensholt, R.

    2017-12-01

    Changes in vegetation phenological events are among the most sensitive biological responses to climate change. In last decades, facilitating by satellite remote sensing techniques, land surface phenology (LSP) have been monitored at global scale using proxy approaches as tracking the temporal change of a satellite-derived vegetation index. However, the existing global assessments of changes in LSP are all established on the basis of leaf phenology using NDVI derived from optical sensors, being responsive to vegetation canopy cover and greenness. Instead, the vegetation optical depth (VOD) parameter from passive microwave sensors, which is sensitive to the aboveground vegetation water content by including as well the woody components in the observations, provides an alternative, independent and comprehensive means for global vegetation phenology monitoring. We used the unique long-term global VOD record available for the period 1992-2012 to monitoring the dynamics of LSP metrics (length of season, start of season and end of season) in comparison with the dynamics of LSP metrics derived from the latest GIMMS NDVI3G V1. We evaluated the differences in the linear trends of LSP metrics between two datasets. Currently, our results suggest that the level of seasonality variation of vegetation water content is less than the vegetation greenness. We found significant phenological changes in vegetation water content in African woodlands, where has been reported with little leaf phenological change regardless of the delays in rainfall onset. Therefore, VOD might allow us to detect temporal shifts in the timing difference of vegetation water storage vs. leaf emergence and to see if some ecophysiological thresholds seem to be reached, that could cause species turnover as climate change-driven alterations to the African monsoon proceed.

  3. Active and passive measurements of radon/thoron exhalation from coal and flyash samples collected from various thermal power plants of Delhi, India

    International Nuclear Information System (INIS)

    Singh, Lalit Mohan; Kumar, Rajesh; Sahoo, B.K.; Sapra, B.K.; Rajendra Prasad

    2013-01-01

    Measurement of radon ( 222 Rn) exhalation from coal, flyash and soil samples was carried out using active (Scintillation based Smart Radon Monitor) as well as passive technique (SSNTD based Can technique). In addition, thoron ( 220 Rn) exhalation measurements were also made for the above samples using Scintillation based Smart Thoron Monitor. To the best of our knowledge, thoron exhalation measurement is first of its kind in India. In this study, a total of 26 samples collected from Badarpur Thermal Power Station, Badarpur and Rajghat Power Station, Rajghat, Delhi were analysed. Thoron surface exhalation rate measured by Scintillation based Thoron Monitor for Badarpur Thermal Power Station varied from 327.8 Bq/m 2 /h to 874.2 Bq/m 2 /h and for Rajghat Thermal Power Station it varied from 176.0 Bq/m 2 /h to 781.1 Bq/m 2 /h. Similarly, the radon mass exhalation rate measured by active technique varied from 12.13 mBq/Kg/h to 118.08 mBq/Kg/h for the samples collected from Badarpur Thermal Power Station; while it varied from 15.00 Bq/Kg/h to 168.07 mBq/Kg/h for the samples collected from Rajghat Thermal Power station. On the other hand, result of measurements made by the conventional Can technique were significantly lower varying from 0.44 mBq/Kg/h to 2.34 mBq/Kg/h for Rajghat Thermal Power Station and from 0.78 mBq/Kg/h to 2.88 mBq/Kg/h for Badarpur Thermal Power Station. This vast variation in the results obtained by active and passive techniques is due to the fact that the active technique accounts for the effect of back-diffusion and possible leakage from the chamber in the process of least square fitting of exponential model while it is not so in the case of SSNTD based Can technique. In view of this, results of active technique are more reliable as compared to the passive technique. More importantly, there was no thoron interference in the radon measurement by the active technique. Further experiments are being carried out using controlled radon and thoron

  4. Analysis on Target Detection and Classification in LTE Based Passive Forward Scattering Radar

    OpenAIRE

    Raja Syamsul Azmir Raja Abdullah; Noor Hafizah Abdul Aziz; Nur Emileen Abdul Rashid; Asem Ahmad Salah; Fazirulhisyam Hashim

    2016-01-01

    The passive bistatic radar (PBR) system can utilize the illuminator of opportunity to enhance radar capability. By utilizing the forward scattering technique and procedure into the specific mode of PBR can provide an improvement in target detection and classification. The system is known as passive Forward Scattering Radar (FSR). The passive FSR system can exploit the peculiar advantage of the enhancement in forward scatter radar cross section (FSRCS) for target detection. Thus, the aim of th...

  5. Passivation layer breakdown during laser-fired contact formation for photovoltaic devices

    International Nuclear Information System (INIS)

    Raghavan, A.; DebRoy, T.; Palmer, T. A.

    2014-01-01

    Low resistance laser-fired ohmic contacts (LFCs) can be formed on the backside of Si-based solar cells using microsecond pulses. However, the impact of these longer pulse durations on the dielectric passivation layer is not clear. Retention of the passivation layer during processing is critical to ensure low recombination rates of electron-hole pairs at the rear surface of the device. In this work, advanced characterization tools are used to demonstrate that although the SiO 2 passivation layer melts directly below the laser, it is well preserved outside the immediate LFC region over a wide range of processing parameters. As a result, low recombination rates at the passivation layer/wafer interface can be expected despite higher energy densities associated with these pulse durations.

  6. Calibration technique for the neutron surface moisture measurement system

    International Nuclear Information System (INIS)

    Watson, W.T.; Shreve, D.C.

    1996-01-01

    A technique for calibrating the response of a surface neutron moisture measurement probe to material moisture concentration has been devised. Tests to ensure that the probe will function in the expected in-tank operating environment are also outlined

  7. Microwave remote sensing: Active and passive. Volume 2 - Radar remote sensing and surface scattering and emission theory

    Science.gov (United States)

    Ulaby, F. T.; Moore, R. K.; Fung, A. K.

    1982-01-01

    The fundamental principles of radar backscattering measurements are presented, including measurement statistics, Doppler and pulse discrimination techniques, and associated ambiguity functions. The operation of real and synthetic aperture sidelooking airborne radar systems is described, along with the internal and external calibration techniques employed in scattering measurements. Attention is given to the physical mechanisms responsible for the scattering emission behavior of homogeneous and inhomogeneous media, through a discussion of surface roughness, dielectric properties and inhomogeneity, and penetration depth. Simple semiempirical models are presented. Theoretical models involving greater mathematical sophistication are also given for extended ocean and bare soil surfaces, and the more general case of a vegetation canopy over a rough surface.

  8. Passive cooling of buildings by night-time ventilation - Final report

    Energy Technology Data Exchange (ETDEWEB)

    Artmann, N.; Manz, H. [Swiss Federal Laboratories for Materials Testing and Research (EMPA), Duebendorf (Switzerland); Heiselberg, P. [Aalborg University, Aalborg (Denmark)

    2008-07-01

    Due to an overall trend towards an increasing cooling energy demand in buildings in many European countries over the last few decades, passive cooling by night-time ventilation is seen as a promising concept. However, because of uncertainties in thermal comfort predictions, architects and engineers are still hesitant to apply passive cooling techniques. As night-time ventilation is highly dependent on climatic conditions, a method for quantifying the climatic cooling potential was developed and the impact of climate warming was investigated. Although a clear temperature decrease was found, significant potential will remain, especially if night-time ventilation is applied in combination with other cooling methods. Building energy simulations showed that the performance of night-time ventilation is also affected by the heat transfer at internal room surfaces, as the cooling effect is very limited due to heat transfer coefficients below about 4 W/m{sup 2}K. Heat transfer during night-time ventilation in case of mixing and displacement ventilation was investigated in a full scale test room at Aalborg University. In the experiments the temperature efficiency of the ventilation was determined. Based on the previous results a method for estimating the potential for cooling by night-time ventilation at an early stage of design was developed. (author)

  9. Near-field Light Scattering Techniques for Measuring Nanoparticle-Surface Interaction Energies and Forces.

    Science.gov (United States)

    Schein, Perry; Ashcroft, Colby K; O'Dell, Dakota; Adam, Ian S; DiPaolo, Brian; Sabharwal, Manit; Shi, Ce; Hart, Robert; Earhart, Christopher; Erickson, David

    2015-08-15

    Nanoparticles are quickly becoming commonplace in many commercial and industrial products, ranging from cosmetics to pharmaceuticals to medical diagnostics. Predicting the stability of the engineered nanoparticles within these products a priori remains an important and difficult challenge. Here we describe our techniques for measuring the mechanical interactions between nanoparticles and surfaces using near-field light scattering. Particle-surface interfacial forces are measured by optically "pushing" a particle against a reference surface and observing its motion using scattered near-field light. Unlike atomic force microscopy, this technique is not limited by thermal noise, but instead takes advantage of it. The integrated waveguide and microfluidic architecture allow for high-throughput measurements of about 1000 particles per hour. We characterize the reproducibility of and experimental uncertainty in the measurements made using the NanoTweezer surface instrument. We report surface interaction studies on gold nanoparticles with 50 nm diameters, smaller than previously reported in the literature using similar techniques.

  10. Surface Passivation by Quantum Exclusion Using Multiple Layers

    Science.gov (United States)

    Hoenk, Michael E. (Inventor)

    2015-01-01

    A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The dopant sheet densities in the doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. The electrically active dopant sheet densities are quite high, reaching more than 1.times.10.sup.14 cm.sup.-2, and locally exceeding 10.sup.22 per cubic centimeter. It has been found that silicon detector devices that have two or more such dopant layers exhibit improved resistance to degradation by UV radiation, at least at wavelengths of 193 nm, as compared to conventional silicon p-on-n devices.

  11. Radio requestable passive SAW water content sensor

    NARCIS (Netherlands)

    Reindl, L.; Ruppel, C.C.W.; Kirmayr, A.; Stockhausen, N.; Hilhorst, M.A.; Balendonk, J.

    2001-01-01

    A new passive sensor for remote measurement of water content in sandy soil was designed, using a surface acoustic wave (SAW) reflective delay line. Information from this sensor can be obtained by an interrogation device via a radio link operating in the European 434-MHz industrial-scientific-medical

  12. Wipe-rinse technique for quantitating microbial contamination on large surfaces

    Science.gov (United States)

    Kirschner, L. E.; Puleo, J. R.

    1979-01-01

    The evaluation of an improved wipe-rinse technique for the bioassay of large areas was undertaken due to inherent inadequacies in the cotton swab-rinse technique to which assay of spacecraft is currently restricted. Four types of contamination control cloths were initially tested. A polyester-bonded cloth (PBC) was selected for further evaluation because of its superior efficiency and handling characteristics. Results from comparative tests with PBC and cotton swabs on simulated spacecraft surfaces indicated a significantly higher recovery efficiency for the PBC than for the cotton (90.4 versus 75.2%). Of the sampling area sites studied, PBC was found to be most effective on surface areas not exceeding 0.74 sq m (8.0 sq ft).

  13. Effect of SiO2 passivation overlayers on hillock formation in Al thin films

    International Nuclear Information System (INIS)

    Kim, Deok-kee

    2012-01-01

    Hillock formation in Al thin films with varying thicknesses of SiO 2 as a passivation layer was investigated during thermal cycling. Based on the stress measurements and the number of hillocks, 250 nm thick SiO 2 was thick enough to suppress the hillock formation and the suppression of hillock at 250 nm passivation and the lack of suppression at thinner passivation is related to the presence/absence of protection against the diffusive flow of atoms from the surrounding area to the surface due to the biaxial compressive stresses present in the film through the weak spots in the passivation layer. The stress state of Al films measured during annealing (the driving force for hillock formation) did not vary much with SiO 2 thickness. A small number of hillocks formed during the plasma enhanced chemical vapor deposition of SiO 2 overlayers at 300 °C. - Highlights: ► We examined the effect of SiO 2 overlayers on hillock formation in Al thin films. ► Thin overlayers were not effective in suppressing diffusive flow to the surface. ► A thick overlayer suppressed the diffusive flow from the interior to the surface. ► The stress state of Al films did not vary much with SiO 2 passivation thickness. ► High mechanical strength provided a large driving force for the large grain growth.

  14. Passive containment cooling water distribution device

    Science.gov (United States)

    Conway, Lawrence E.; Fanto, Susan V.

    1994-01-01

    A passive containment cooling system for a nuclear reactor containment vessel. Disclosed is a cooling water distribution system for introducing cooling water by gravity uniformly over the outer surface of a steel containment vessel using a series of radial guide elements and cascading weir boxes to collect and then distribute the cooling water into a series of distribution areas through a plurality of cascading weirs. The cooling water is then uniformly distributed over the curved surface by a plurality of weir notches in the face plate of the weir box.

  15. Enhancement of downward-facing saturated boiling heat transfer by the cold spray technique

    Energy Technology Data Exchange (ETDEWEB)

    Sohag, Frauk A.; Beck, Faith R.; Mohanta, Lokanath; Cheung, Fan Bill; Segall, Albert E.; Eden, Timothy J.; Potter, John K. [Pennsylvania State University, University Park (United States)

    2017-02-15

    In-vessel retention by passive external reactor vessel cooling under severe accident conditions is a viable approach for retention of radioactive core melt within the reactor vessel. In this study, a new and versatile coating technique known as 'cold spray' that can readily be applied to operating and advanced reactors was developed to form a microporous coating on the outer surface of a simulated reactor lower head. Quenching experiments were performed under simulated in-vessel retention by passive external reactor vessel cooling conditions using test vessels with and without cold spray coatings. Quantitative measurements show that for all angular locations on the vessel outer surface, the local critical heat flux (CHF) values for the coated vessel were consistently higher than the corresponding CHF values for the bare vessel. However, it was also observed for both coated and uncoated surfaces that the local rate of boiling and local CHF limit vary appreciably along the outer surface of the test vessel. Nonetheless, results of this intriguing study clearly show that the use of cold spray coatings could enhance the local CHF limit for downward-facing boiling by > 88%.

  16. Compositional properties of passivity

    NARCIS (Netherlands)

    Kerber, Florian; van der Schaft, Arjan

    2011-01-01

    The classical passivity theorem states that the negative feedback interconnection of passive systems is again passive. The converse statement, - passivity of the interconnected system implies passivity of the subsystems -, turns out to be equally valid. This result implies that among all feasible

  17. Surface Casting Defects Inspection Using Vision System and Neural Network Techniques

    Directory of Open Access Journals (Sweden)

    Świłło S.J.

    2013-12-01

    Full Text Available The paper presents a vision based approach and neural network techniques in surface defects inspection and categorization. Depending on part design and processing techniques, castings may develop surface discontinuities such as cracks and pores that greatly influence the material’s properties Since the human visual inspection for the surface is slow and expensive, a computer vision system is an alternative solution for the online inspection. The authors present the developed vision system uses an advanced image processing algorithm based on modified Laplacian of Gaussian edge detection method and advanced lighting system. The defect inspection algorithm consists of several parameters that allow the user to specify the sensitivity level at which he can accept the defects in the casting. In addition to the developed image processing algorithm and vision system apparatus, an advanced learning process has been developed, based on neural network techniques. Finally, as an example three groups of defects were investigated demonstrates automatic selection and categorization of the measured defects, such as blowholes, shrinkage porosity and shrinkage cavity.

  18. Passivation process for superfine aluminum powders obtained by electrical explosion of wires

    International Nuclear Information System (INIS)

    Kwon, Young-Soon; Gromov, Alexander A.; Ilyin, Alexander P.; Rim, Geun-Hie

    2003-01-01

    The process of passivation of superfine aluminum powders (SFAPs) (a s ≤100 nm), obtained with the electrical explosion of wires (EEW) method, has been studied. The passivation coatings of different nature (oxides, stearic acid and aluminum diboride) were covered on the particle surface. The process of passivation and analysis of passivated powders was studied by X-ray photoelectron spectroscopy (XPS), XRD, TEM, infrared spectroscopy (IR), mass spectrometry (MS), thermocouple method and bomb calorimetry. After the comprehensive testing of coatings, a model of stabilization of the superfine aluminum particles was suggested, explaining the anomalous high content of aluminum metal in the electroexplosive powders. The main characteristic of the model is a formation of charged structures, which prevent metal oxidation

  19. A complementary set of electrochemical and X-ray synchrotron techniques to determine the passivation mechanism of iron treated in a new corrosion inhibitor solution specifically developed for the preservation of metallic artefacts

    International Nuclear Information System (INIS)

    Mirambet, F.; Reguer, S.; Rocca, E.; Hollner, S.; Testemale, D.

    2010-01-01

    Metallic artefacts of the cultural heritage are often stored in uncontrolled environmental conditions. They are very sensitive to atmospheric corrosion caused by a succession of wet and dry periods due to variations of relative humidity and temperature. To avoid the complete degradation of the metallic artefacts, new preventive strategies must be developed. In this context, we have studied new compounds based on sodium carboxylates solutions CH 3 (CH 2 ) n-2 COO - , Na + hereafter called NaC n . They allow the formation of a passive layer at the metallic surface composed of a metal-carboxylate complex. To understand the action of those inhibitors in the passivation process of iron we have performed electrochemical measurements and surface characterisation. Moreover, to monitor in real time the growth of the coating, in situ X-ray absorption spectroscopy (XAS) experiments at iron K-edge were carried out in an electrochemical cell. These analyses have shown that in the case of NaC 10 solution, the protection of iron surface is correlated to the precipitation of a well-organised layer of FeC 10 . These experiments confirmed that this compound is a fully oxidised trinuclear Fe(III) complex containing decanoate anions as ligands. Such information concerning the passive layer is a key factor to evaluate its stability and finally the long-term efficiency of the protection treatment. (orig.)

  20. Evaluation of Passive Multilayer Cloud Detection Using Preliminary CloudSat and CALIPSO Cloud Profiles

    Science.gov (United States)

    Minnis, P.; Sun-Mack, S.; Chang, F.; Huang, J.; Nguyen, L.; Ayers, J. K.; Spangenberg, D. A.; Yi, Y.; Trepte, C. R.

    2006-12-01

    During the last few years, several algorithms have been developed to detect and retrieve multilayered clouds using passive satellite data. Assessing these techniques has been difficult due to the need for active sensors such as cloud radars and lidars that can "see" through different layers of clouds. Such sensors have been available only at a few surface sites and on aircraft during field programs. With the launch of the CALIPSO and CloudSat satellites on April 28, 2006, it is now possible to observe multilayered systems all over the globe using collocated cloud radar and lidar data. As part of the A- Train, these new active sensors are also matched in time ad space with passive measurements from the Aqua Moderate Resolution Imaging Spectroradiometer (MODIS) and Advanced Microwave Scanning Radiometer - EOS (AMSR-E). The Clouds and the Earth's Radiant Energy System (CERES) has been developing and testing algorithms to detect ice-over-water overlapping cloud systems and to retrieve the cloud liquid path (LWP) and ice water path (IWP) for those systems. One technique uses a combination of the CERES cloud retrieval algorithm applied to MODIS data and a microwave retrieval method applied to AMSR-E data. The combination of a CO2-slicing cloud retireval technique with the CERES algorithms applied to MODIS data (Chang et al., 2005) is used to detect and analyze such overlapped systems that contain thin ice clouds. A third technique uses brightness temperature differences and the CERES algorithms to detect similar overlapped methods. This paper uses preliminary CloudSat and CALIPSO data to begin a global scale assessment of these different methods. The long-term goals are to assess and refine the algorithms to aid the development of an optimal combination of the techniques to better monitor ice 9and liquid water clouds in overlapped conditions.