Optical pumping of hot phonons in GaAs

International Nuclear Information System (INIS)

Collins, C.L.; Yu, P.Y.

1982-01-01

Optical pumping of hot LO phonons in GaAs has been studied as a function of the excitation photon frequency. The experimental results are in good agreement with a model calculation which includes both inter- and intra-valley electron-phonon scatterings. The GAMMA-L and GAMMA-X intervalley electron-phonon interactions in GaAs have been estimated

Surface phonons on Bi2Sr2CaCu2O8+δ

International Nuclear Information System (INIS)

Phelps, R.B.; Akavoor, P.; Kesmodel, L.L.; Demuth, J.E.; Mitzi, D.B.

1993-01-01

We report measurements of surface optical phonons on Bi 2 Sr 2 CaCu 2 O 8+δ with high-resolution electron-energy-loss spectroscopy (HREELS). In addition to peaks near 50 and 80 meV (403 and 645 cm -1 ), which have been previously observed, our loss spectra exhibit a peak at 26 meV (210 cm -1 ). Loss spectra were measured at temperatures from 45 to 146 K, and the temperature dependence of the peaks was found to be weak. The 50 and 80 meV peaks shift to lower frequency by ∼1.5 meV over this temperature range. All three peaks are attributed to surface optical phonons. The identification of particular bulk modes corresponding to the surface modes observed with HREELS is discussed

Interface phonon effect on optical spectra of quantum nanostructures

International Nuclear Information System (INIS)

Maslov, Alexander Yu.; Proshina, Olga V.; Rusina, Anastasia N.

2009-01-01

This paper deals with theory of large radius polaron effect in quantum wells, wires and dots. The interaction of charge particles and excitons with both bulk and interface optical phonons is taken into consideration. The analytical expression for polaron binding energy is obtained for different types of nanostructures. It is shown that the contribution of interface phonons to the polaron binding energy may exceed the bulk phonon part. The manifestation of polaron effects in optical spectra of quantum nanostructures is discussed.

Unified treatment of coupled optical and acoustic phonons in piezoelectric cubic materials

DEFF Research Database (Denmark)

Willatzen, Morten; Wang, Zhong Lin

2015-01-01

A unified treatment of coupled optical and acoustic phonons in piezoelectric cubic materials is presented whereby the lattice displacement vector and the internal ionic displacement vector are found simultaneously. It is shown that phonon couplings exist in pairs only; either between the electric...... piezoelectricity in a cubic structured material slab. First, it is shown that isolated optical phonon modes generally cannot exist in piezoelectric cubic slabs. Second, we prove that confined acousto-optical phonon modes only exist for a discrete set of in-plane wave numbers in piezoelectric cubic slabs. Third...... potential and the lattice displacement coordinate perpendicular to the phonon wave vector or between the two other lattice displacement components. The former leads to coupled acousto-optical phonons by virtue of the piezoelectric effect. We then establish three new conjectures that entirely stem from...

Rode's iterative calculation of surface optical phonon scattering limited electron mobility in N-polar GaN devices

International Nuclear Information System (INIS)

Ghosh, Krishnendu; Singisetti, Uttam

2015-01-01

N-polar GaN channel mobility is important for high frequency device applications. Here, we report theoretical calculations on the surface optical (SO) phonon scattering rate of two-dimensional electron gas (2DEG) in N-polar GaN quantum well channels with high-k dielectrics. Rode's iterative calculation is used to predict the scattering rate and mobility. Coupling of the GaN plasmon modes with the SO modes is taken into account and dynamic screening is employed under linear polarization response. The effect of SO phonons on 2DEG mobility was found to be small at >5 nm channel thickness. However, the SO mobility in 3 nm N-polar GaN channels with HfO 2 and ZrO 2 high-k dielectrics is low and limits the total mobility. The SO scattering for SiN dielectric on GaN was found to be negligible due to its high SO phonon energy. Using Al 2 O 3 , the SO phonon scattering does not affect mobility significantly only except the case when the channel is too thin with a low 2DEG density

Experimental study of surface plasmon-phonon polaritons in GaAs-based microstructures

Science.gov (United States)

Galimov, A. I.; Shalygin, V. A.; Moldavskaya, M. D.; Panevin, V. Yu; Melentyev, G. A.; Artemyev, A. A.; Firsov, D. A.; Vorobjev, L. E.; Klimko, G. V.; Usikova, A. A.; Komissarova, T. A.; Sedova, I. V.; Ivanov, S. V.

2018-03-01

Optical properties of a heavily-doped GaAs epitaxial layer with a regular grating at its surface have been experimentally investigated in the terahertz spectral range. Reflectivity spectra for the layer with a profiled surface drastically differ from those for the as-grown epilayer with a planar surface. For s-polarized radiation, this difference is totally caused by the electromagnetic wave diffraction at the grating. For p-polarized radiation, additional resonant dips arise due to excitation of surface plasmon-phonon polaritons. Terahertz radiation emission under significant electron heating in an applied pulsed electric field has also been studied. Polarization measurements revealed pronounced peaks related to surface plasmon-phonon polariton resonances of the first and second order in the emission spectra.

Long-wavelength optical phonon behavior in uniaxial strained graphene: Role of electron-phonon interaction

OpenAIRE

Assili, Mohamed; Haddad, Sonia

2014-01-01

We derive the frequency shifts and the broadening of $\\Gamma$ point longitudinal optical (LO) and transverse optical (TO) phonon modes, due to electron-phonon interaction, in graphene under uniaxial strain as a function of the electron density and the disorder amount. We show that, in the absence of a shear strain component, such interaction gives rise to a lifting of the degeneracy of the LO and TO modes which contributes to the splitting of the G Raman band. The anisotropy of the electronic...

Active tuning of surface phonon polariton resonances via carrier photoinjection

Science.gov (United States)

Dunkelberger, Adam D.; Ellis, Chase T.; Ratchford, Daniel C.; Giles, Alexander J.; Kim, Mijin; Kim, Chul Soo; Spann, Bryan T.; Vurgaftman, Igor; Tischler, Joseph G.; Long, James P.; Glembocki, Orest J.; Owrutsky, Jeffrey C.; Caldwell, Joshua D.

2018-01-01

Surface phonon polaritons (SPhPs) are attractive alternatives to infrared plasmonics for subdiffractional confinement of infrared light. Localized SPhP resonances in semiconductor nanoresonators are narrow, but that linewidth and the limited extent of the Reststrahlen band limit spectral coverage. To address this limitation, we report active tuning of SPhP resonances in InP and 4H-SiC by photoinjecting free carriers into nanoresonators, taking advantage of the coupling between the carrier plasma and optic phonons to blueshift SPhP resonances. We demonstrate state-of-the-art tuning figures of merit upon continuous-wave excitation (in InP) or pulsed excitation (in 4H-SiC). Lifetime effects cause the tuning to saturate in InP, and carrier redistribution leads to rapid (electronic and phononic excitations.

Specularity of longitudinal acoustic phonons at rough surfaces

Science.gov (United States)

Gelda, Dhruv; Ghossoub, Marc G.; Valavala, Krishna; Ma, Jun; Rajagopal, Manjunath C.; Sinha, Sanjiv

2018-01-01

The specularity of phonons at crystal surfaces is of direct importance to thermal transport in nanostructures and to dissipation in nanomechanical resonators. Wave scattering theory provides a framework for estimating wavelength-dependent specularity, but experimental validation remains elusive. Widely available thermal conductivity data presents poor validation since the involvement of the infinitude of phonon wavelengths in thermal transport presents an underconstrained test for specularity theory. Here, we report phonon specularity by measuring the lifetimes of individual coherent longitudinal acoustic phonon modes excited in ultrathin (36-205 nm) suspended silicon membranes at room temperature over the frequency range ˜20 -118 GHz. Phonon surface scattering dominates intrinsic Akhiezer damping at frequencies ≳60 GHz, enabling measurements of phonon boundary scattering time over wavelengths ˜72 -140 nm . We obtain detailed statistics of the surface roughness at the top and bottom surfaces of membranes using HRTEM imaging. We find that the specularity of the excited modes are in good agreement with solutions of wave scattering only when the TEM statistics are corrected for projection errors. The often-cited Ziman formula for phonon specularity also appears in good agreement with the data, contradicting previous results. This work helps to advance the fundamental understanding of phonon scattering at the surfaces of nanostructures.

Toward stimulated interaction of surface phonon polaritons

Energy Technology Data Exchange (ETDEWEB)

Kong, B. D.; Trew, R. J.; Kim, K. W., E-mail: kwk@ncsu.edu [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911 (United States)

2013-12-21

Thermal emission spectra mediated by surface phonon polariton are examined by using a theoretical model that accounts for generation processes. Specifically, the acoustic phonon fusion mechanism is introduced to remedy theoretical deficiencies of the near thermal equilibrium treatments. The model clarifies the thermal excitation mechanism of surface phonon polaritons and the energy transfer path under non-zero energy flow. When applied to GaAs and SiC semi-infinite surfaces, the nonequilibrium model predicts that the temperature dependence of the quasi-monochromatic peak can exhibit distinctly different characteristics of either sharp increase or slow saturation depending on the materials, which is in direct contrast with the estimate made by the near-equilibrium model. The proposed theoretical tool can accurately analyze the nonequilibrium steady states, potentially paving a pathway to demonstrate stimulated interaction/emission of thermally excited surface phonon polaritons.

Optical phonons in PbTe/CdTe multilayer heterostructures

Energy Technology Data Exchange (ETDEWEB)

Novikova, N. N.; Yakovlev, V. A. [Russian Academy of Sciences, Institute for Spectroscopy (Russian Federation); Kucherenko, I. V., E-mail: kucheren@sci.lebedev.ru [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Karczewski, G. [Polish Academy of Sciences, Institute of Physics (Poland); Aleshchenko, Yu. A.; Muratov, A. V.; Zavaritskaya, T. N.; Melnik, N. N. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

2015-05-15

The infrared reflection spectra of PbTe/CdTe multilayer nanostructures grown by molecular-beam epitaxy are measured in the frequency range of 20–5000 cm{sup −1} at room temperature. The thicknesses and high-frequency dielectric constants of the PbTe and CdTe layers and the frequencies of the transverse optical (TO) phonons in these structures are determined from dispersion analysis of the spectra. It is found that the samples under study are characterized by two TO phonon frequencies, equal to 28 and 47 cm{sup −1}. The first frequency is close to that of TO phonons in bulk PbTe, and the second is assigned to the optical mode in structurally distorted interface layers. The Raman-scattering spectra upon excitation with the radiation of an Ar{sup +} laser at 514.5 nm are measured at room and liquid-nitrogen temperatures. The weak line at 106 cm{sup −1} observed in these spectra is attributed to longitudinal optical phonons in the interface layers.

Confined and interface phonons in combined cylindrical nanoheterosystem

Directory of Open Access Journals (Sweden)

O.M.Makhanets

2006-01-01

Full Text Available The spectra of all types of phonons existing in a complicated combined nanoheterosystem consisting of three cylindrical quantum dots embedded into the cylindrical quantum wire placed into vacuum are studied within the dielectric continuum model. It is shown that there are confined optical (LO and interface phonons of two types: top surface optical (TSO and side surface optical (SSO modes of vibration in such a nanosystem. The dependences of phonon energies on the quasiwave numbers and geometrical parameters of quantum dots are investigated and analysed.

Electron-phonon interaction on an Al(001) surface

International Nuclear Information System (INIS)

Sklyadneva, I Yu; Chulkov, E V; Echenique, P M

2008-01-01

We report an ab initio study of the electron-phonon (e-ph) interaction and its contribution to the lifetime broadening of excited hole (electron) surface states on Al(001). The calculations based on density-functional theory were carried out using a linear response approach in the plane-wave pseudopotential representation. The obtained results show that both the electron-phonon coupling and the linewidth experience a weak variation with the energy and momentum position of a hole (electron) surface state in the energy band. An analysis of different contributions to the e-ph coupling reveals that bulk phonon modes turn out to be more involved in the scattering processes of excited electrons and holes than surface phonon modes. It is also shown that the role of the e-ph coupling in the broadening of the Rayleigh surface phonon mode is insignificant compared to anharmonic effects

Acousto-optical interaction of surface acoustic and optical waves in a two-dimensional phoxonic crystal hetero-structure cavity.

Science.gov (United States)

Ma, Tian-Xue; Zou, Kui; Wang, Yue-Sheng; Zhang, Chuanzeng; Su, Xiao-Xing

2014-11-17

Phoxonic crystal is a promising material for manipulating sound and light simultaneously. In this paper, we theoretically demonstrate the propagation of acoustic and optical waves along the truncated surface of a two-dimensional square-latticed phoxonic crystal. Further, a phoxonic crystal hetero-structure cavity is proposed, which can simultaneously confine surface acoustic and optical waves. The interface motion and photoelastic effects are taken into account in the acousto-optical coupling. The results show obvious shifts in eigenfrequencies of the photonic cavity modes induced by different phononic cavity modes. The symmetry of the phononic cavity modes plays a more important role in the single-phonon exchange process than in the case of the multi-phonon exchange. Under the same deformation, the frequency shift of the photonic transverse electric mode is larger than that of the transverse magnetic mode.

Modelling exciton–phonon interactions in optically driven quantum dots

DEFF Research Database (Denmark)

Nazir, Ahsan; McCutcheon, Dara

2016-01-01

We provide a self-contained review of master equation approaches to modelling phonon effects in optically driven self-assembled quantum dots. Coupling of the (quasi) two-level excitonic system to phonons leads to dissipation and dephasing, the rates of which depend on the excitation conditions...

Vibrational Surface Electron-Energy-Loss Spectroscopy Probes Confined Surface-Phonon Modes

Directory of Open Access Journals (Sweden)

Hugo Lourenço-Martins

2017-12-01

Full Text Available Recently, two reports [Krivanek et al. Nature (London 514, 209 (2014NATUAS0028-083610.1038/nature13870, Lagos et al. Nature (London 543, 529 (2017NATUAS0028-083610.1038/nature21699] have demonstrated the amazing possibility to probe vibrational excitations from nanoparticles with a spatial resolution much smaller than the corresponding free-space phonon wavelength using electron-energy-loss spectroscopy (EELS. While Lagos et al. evidenced a strong spatial and spectral modulation of the EELS signal over a nanoparticle, Krivanek et al. did not. Here, we show that discrepancies among different EELS experiments as well as their relation to optical near- and far-field optical experiments [Dai et al. Science 343, 1125 (2014SCIEAS0036-807510.1126/science.1246833] can be understood by introducing the concept of confined bright and dark surface phonon modes, whose density of states is probed by EELS. Such a concise formalism is the vibrational counterpart of the broadly used formalism for localized surface plasmons [Ouyang and Isaacson Philos. Mag. B 60, 481 (1989PMABDJ1364-281210.1080/13642818908205921, García de Abajo and Aizpurua Phys. Rev. B 56, 15873 (1997PRBMDO0163-182910.1103/PhysRevB.56.15873, García de Abajo and Kociak Phys. Rev. Lett. 100, 106804 (2008PRLTAO0031-900710.1103/PhysRevLett.100.106804, Boudarham and Kociak Phys. Rev. B 85, 245447 (2012PRBMDO1098-012110.1103/PhysRevB.85.245447]; it makes it straightforward to predict or interpret phenomena already known for localized surface plasmons such as environment-related energy shifts or the possibility of 3D mapping of the related surface charge densities [Collins et al. ACS Photonics 2, 1628 (2015APCHD52330-402210.1021/acsphotonics.5b00421].

Phonon dynamics of graphene on metals

Science.gov (United States)

Taleb, Amjad Al; Farías, Daniel

2016-03-01

The study of surface phonon dispersion curves is motivated by the quest for a detailed understanding of the forces between the atoms at the surface and in the bulk. In the case of graphene, additional motivation comes from the fact that thermal conductivity is dominated by contributions from acoustic phonons, while optical phonon properties are essential to understand Raman spectra. In this article, we review recent progress made in the experimental determination of phonon dispersion curves of graphene grown on several single-crystal metal surfaces. The two main experimental techniques usually employed are high-resolution electron energy loss spectroscopy (HREELS) and inelastic helium atom scattering (HAS). The different dispersion branches provide a detailed insight into the graphene-substrate interaction. Softening of optical modes and signatures of the substrate‧s Rayleigh wave are observed for strong graphene-substrate interactions, while acoustic phonon modes resemble those of free-standing graphene for weakly interacting systems. The latter allows determining the bending rigidity and the graphene-substrate coupling strength. A comparison between theory and experiment is discussed for several illustrative examples. Perspectives for future experiments are discussed.

Quantum Theory of Conditional Phonon States in a Dual-Pumped Raman Optical Frequency Comb

Science.gov (United States)

Mondloch, Erin

In this work, we theoretically and numerically investigate nonclassical phonon states created in the collective vibration of a Raman medium by the generation of a dual-pumped Raman optical frequency comb in an optical cavity. This frequency comb is generated by cascaded Raman scattering driven by two phase-locked pump lasers that are separated in frequency by three times the Raman phonon frequency. We characterize the variety of conditioned phonon states that are created when the number of photons in all optical frequency modes except the pump modes are measured. Almost all of these conditioned phonon states are extremely well approximated as three-phonon-squeezed states or Schrodinger-cat states, depending on the outcomes of the photon number measurements. We show how the combinations of first-, second-, and third-order Raman scattering that correspond to each set of measured photon numbers determine the fidelity of the conditioned phonon state with model three-phonon-squeezed states and Schrodinger-cat states. All of the conditioned phonon states demonstrate preferential growth of the phonon mode along three directions in phase space. That is, there are three preferred phase values that the phonon state takes on as a result of Raman scattering. We show that the combination of Raman processes that produces a given set of measured photon numbers always produces phonons in multiples of three. In the quantum number-state representation, these multiples of three are responsible for the threefold phase-space symmetry seen in the conditioned phonon states. With a semiclassical model, we show how this three-phase preference can also be understood in light of phase correlations that are known to spontaneously arise in single-pumped Raman frequency combs. Additionally, our semiclassical model predicts that the optical modes also grow preferentially along three phases, suggesting that the dual-pumped Raman optical frequency comb is partially phase-stabilized.

Light-induced nonthermal population of optical phonons in nanocrystals

Science.gov (United States)

Falcão, Bruno P.; Leitão, Joaquim P.; Correia, Maria R.; Soares, Maria R.; Wiggers, Hartmut; Cantarero, Andrés; Pereira, Rui N.

2017-03-01

Raman spectroscopy is widely used to study bulk and nanomaterials, where information is frequently obtained from spectral line positions and intensities. In this study, we monitored the Raman spectrum of ensembles of semiconductor nanocrystals (NCs) as a function of optical excitation intensity (optical excitation experiments). We observe that in NCs the red-shift of the Raman peak position with increasing light power density is much steeper than that recorded for the corresponding bulk material. The increase in optical excitation intensity results also in an increasingly higher temperature of the NCs as obtained with Raman thermometry through the commonly used Stokes/anti-Stokes intensity ratio. More significantly, the obtained dependence of the Raman peak position on temperature in optical excitation experiments is markedly different from that observed when the same NCs are excited only thermally (thermal excitation experiments). This difference is not observed for the control bulk material. The inefficient diffusion of photogenerated charges in nanoparticulate systems, due to their inherently low electrical conductivity, results in a higher steady-state density of photoexcited charges and, consequently, also in a stronger excitation of optical phonons that cannot decay quickly enough into acoustic phonons. This results in a nonthermal population of optical phonons and thus the Raman spectrum deviates from that expected for the temperature of the system. Our study has major consequences to the general application of Raman spectroscopy to nanomaterials.

Electromagnetic excitation of phonons at C(001) surfaces

International Nuclear Information System (INIS)

Perez-Sanchez, F L; Perez-Rodriguez, F

2009-01-01

The photon-phonon coupling at C(001)-(2 x 1) surfaces and its manifestation in far-infrared reflectance anisotropy spectra (FIR-RAS) are theoretically investigated. We solve the coupled system of equations for the electromagnetic field and lattice vibrations, described within the adiabatic bond charge model (ABCM), with the method of expansion into bulk phonon and photon modes. The calculated FIR-RAS exhibit resonances associated with zone-center surface phonons in good agreement with available HREELS experiments and predictions of vibrational modes for diamond (001)-(2 x 1) surfaces from ABCM and ab initio calculations. Interestingly, the reflectance anisotropy spectra for a C(001)-(2 x 1) surface turn out to be qualitatively different from the spectra for a Si(001)-(2 x 1) surface, reported previously.

Electromagnetic excitation of phonons at C(001) surfaces

Energy Technology Data Exchange (ETDEWEB)

Perez-Sanchez, F L [Escuela de Ciencias, Universidad Autonoma ' Benito Juarez' de Oaxaca, Avenida Universidad S/N, Ex-Hacienda de Cinco Senores, Ciudad Universitaria, Oaxaca de Juarez, Oaxaca, 68120 (Mexico); Perez-Rodriguez, F, E-mail: fperez@sirio.ifuap.buap.m [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, Apartado Post. J-48, Puebla 72570 (Mexico)

2009-09-02

The photon-phonon coupling at C(001)-(2 x 1) surfaces and its manifestation in far-infrared reflectance anisotropy spectra (FIR-RAS) are theoretically investigated. We solve the coupled system of equations for the electromagnetic field and lattice vibrations, described within the adiabatic bond charge model (ABCM), with the method of expansion into bulk phonon and photon modes. The calculated FIR-RAS exhibit resonances associated with zone-center surface phonons in good agreement with available HREELS experiments and predictions of vibrational modes for diamond (001)-(2 x 1) surfaces from ABCM and ab initio calculations. Interestingly, the reflectance anisotropy spectra for a C(001)-(2 x 1) surface turn out to be qualitatively different from the spectra for a Si(001)-(2 x 1) surface, reported previously.

Electron-phonon coupling at metal surfaces

International Nuclear Information System (INIS)

Hellsing, B.; Eiguren, A.; Chulkov, E.V.

2002-01-01

Chemical reactions at metal surfaces are influenced by inherent dissipative processes which involve energy transfer between the conduction electrons and the nuclear motion. We shall discuss how it is possible to model this electron-phonon coupling in order to estimate its importance. A relevant quantity for this investigation is the lifetime of surface-localized electron states. A surface state, quantum well state or surface image state is located in a surface-projected bandgap and becomes relatively sharp in energy. This makes a comparison between calculations and experimental data most attractive, with a possibility of resolving the origin of the lifetime broadening of electron states. To achieve more than an order of magnitude estimate we point out the importance of taking into account the phonon spectrum, electron surface state wavefunctions and screening of the electron-ion potential. (author)

Acousto-optical phonon excitation in cubic piezoelectric slabs and crystal growth orientation effects

DEFF Research Database (Denmark)

Willatzen, Morten; Duggen, Lars

2017-01-01

In this paper we investigate theoretically the influence of piezoelectric coupling on phonon dispersion relations. Specifically we solve dispersion relations for a fully coupled zinc-blende freestanding quantum well for different orientations of the crystal unit cell. It is shown that the phonon...... mode density in GaAs can change by a factor of approximately 2–3 at qx a = 1 for different crystal-growth directions relative to the slab thickness direction. In particular, it is found that optical and acoustic phonon modes are always piezoelectrically coupled, independent of the crystal...... that the piezoelectric effect leads to a drastically enhanced coupling of acoustic and optical phonon modes and increase in the local phonon density of states near the plasma frequency where the permittivity approaches zero....

Resonant intersubband polariton-LO phonon scattering in an optically pumped polaritonic device

Science.gov (United States)

Manceau, J.-M.; Tran, N.-L.; Biasiol, G.; Laurent, T.; Sagnes, I.; Beaudoin, G.; De Liberato, S.; Carusotto, I.; Colombelli, R.

2018-05-01

We report experimental evidence of longitudinal optical (LO) phonon-intersubband polariton scattering processes under resonant injection of light. The scattering process is resonant with both the initial (upper polariton) and final (lower polariton) states and is induced by the interaction of confined electrons with longitudinal optical phonons. The system is optically pumped with a mid-IR laser tuned between 1094 cm-1 and 1134 cm-1 (λ = 9.14 μm and λ = 8.82 μm). The demonstration is provided for both GaAs/AlGaAs and InGaAs/AlInAs doped quantum well systems whose intersubband plasmon lies at a wavelength of ≈10 μm. In addition to elucidating the microscopic mechanism of the polariton-phonon scattering, it is found to differ substantially from the standard single particle electron-LO phonon scattering mechanism, and this work constitutes an important step towards the hopefully forthcoming demonstration of an intersubband polariton laser.

Phonons, defects and optical damage in crystalline acetanilide

Science.gov (United States)

Kosic, Thomas J.; Hill, Jeffrey R.; Dlott, Dana D.

1986-04-01

Intense picosecond pulses cause accumulated optical damage in acetanilide crystals at low temperature. Catastrophic damage to the irradiated volume occurs after an incubation period where defects accumulate. The optical damage is monitored with subanosecond time resolution. The generation of defects is studied with damage-detected picosecond spectroscopy. The accumulation of defects is studied by time-resolved coherent Raman scattering, which is used to measure optical phonon scattering from the accumulating defects.

Long-wavelength optical phonon behavior in uniaxial strained graphene: Role of electron-phonon interaction

Science.gov (United States)

Assili, M.; Haddad, S.

2014-09-01

We derive the frequency shifts and the broadening of Γ-point longitudinal optical (LO) and transverse optical (TO) phonon modes, due to electron-phonon interaction, in graphene under uniaxial strain as a function of the electron density and the disorder amount. We show that, in the absence of a shear strain component, such interaction gives rise to a lifting of the degeneracy of the LO and TO modes which contributes to the splitting of the G Raman band. The anisotropy of the electronic spectrum, induced by the strain, results in a polarization dependence of the LO and TO modes. This dependence is in agreement with the experimental results showing a periodic modulation of the Raman intensity of the split G peak. Moreover, the anomalous behavior of the frequency shift reported in undeformed graphene is found to be robust under strain.

Ion beam induced optical and surface modification in plasmonic nanostructures

Energy Technology Data Exchange (ETDEWEB)

Singh, Udai B., E-mail: udaibhansingh123@gmail.com; Gautam, Subodh K.; Kumar, Sunil; Hooda, Sonu; Ojha, Sunil; Singh, Fouran

2016-07-15

In present work, ion irradiation induced nanostructuring has been exploited as an efficient and effective tool for synthesis of coupled plasmonics nanostructures by using 1.2 MeV Xe ions on Au/ZnO/Au system deposited on glass substrate. The results are correlated on the basis of their optical absorption, surface morphologies and enhanced sensitivity of evolved phonon modes by using UV Visible spectroscopy, scanning electron microscopy (SEM), and Raman spectroscopy (RS), respectively. Optical absorbance spectra of plasmonic nanostructures (NSs) show a decrease in band gap, which may be ascribed to the formation of defects with ion irradiation. The surface morphology reveals the formation of percolated NSs upon ion irradiation and Rutherford backscattering spectrometry (RBS) study clearly shows the formation of multilayer system. Furthermore, RS measurements on samples are studied to understand the enhanced sensitivity of ion irradiation induced phonon mode at 573 cm{sup −1} along with other modes. As compared to pristine sample, a stronger and pronounced evolution of these phonon modes is observed with further ion irradiation, which indicates localized surface plasmon results with enhanced intensity of phonon modes of Zinc oxide (ZnO) material. Thus, such plasmonic NSs can be used as surface enhanced Raman scattering (SERS) substrates.

Enhanced Electron-Phonon Coupling at Metal Surfaces

Energy Technology Data Exchange (ETDEWEB)

Plummer, Ward E.

2010-08-04

The Born-Oppenheimer approximation (BOA) decouples electronic from nuclear motion, providing a focal point for most quantum mechanics textbooks. However, a multitude of important chemical, physical and biological phenomena are driven by violations of this approximation. Vibronic interactions are a necessary ingredient in any process that makes or breaks a covalent bond, for example, conventional catalysis or enzymatically delivered biological reactions. Metastable phenomena associated with defects and dopants in semiconductors, oxides, and glasses entail violation of the BOA. Charge exchange in inorganic polymers, organic slats and biological systems involves charge- induced distortions of the local structure. A classic example is conventional superconductivity, which is driven by the electron-lattice interaction. High-resolution angle-resolved photoemission experiments are yielding new insight into the microscopic origin of electron-phonon coupling (EPC) in anisotropic two-dimensional systems. Our recent surface phonon measurement on the surface of a high-Tc material clearly indicates an important momentum dependent EPC in these materials. In the last few years we have shifted our research focus from solely looking at electron phonon coupling to examining the structure/functionality relationship at the surface of complex transition metal compounds. The investigation on electron phonon coupling has allowed us to move to systems where there is coupling between the lattice, the electrons and the spin.

Interband optical absorption in the Wannier-Stark ladder under the electron-LO-phonon resonance condition

International Nuclear Information System (INIS)

Govorov, A.O.

1993-08-01

Interband optical absorption in the Wannier-Stark ladder in the presence of the electron-LO-phonon resonance is investigated theoretically. The electron-LO-phonon resonance occurs when the energy spacing between adjacent Stark-ladder levels coincides with the LO-phonon energy. We propose a model describing the polaron effect in a superlattice. Calculations show that the absorption line shape is strongly modified due to the polaron effect under the electron-LO-phonon resonance condition. We consider optical phenomena in a normal magnetic field that leads to enhancement of polaron effects. (author). 17 refs, 5 figs

Highest-order optical phonon-mediated relaxation in CdTe/ZnTe quantum dots

International Nuclear Information System (INIS)

Masumoto, Yasuaki; Nomura, Mitsuhiro; Okuno, Tsuyoshi; Terai, Yoshikazu; Kuroda, Shinji; Takita, K.

2003-01-01

The highest 19th-order longitudinal optical (LO) phonon-mediated relaxation was observed in photoluminescence excitation spectra of CdTe self-assembled quantum dots grown in ZnTe. Hot excitons photoexcited highly in the ZnTe barrier layer are relaxed into the wetting-layer state by emitting multiple LO phonons of the barrier layer successively. Below the wetting-layer state, the LO phonons involved in the relaxation are transformed to those of interfacial Zn x Cd 1-x Te surrounding CdTe quantum dots. The ZnTe-like and CdTe-like LO phonons of Zn x Cd 1-x Te and lastly acoustic phonons are emitted in the relaxation into the CdTe dots. The observed main relaxation is the fast relaxation directly into CdTe quantum dots and is not the relaxation through either the wetting-layer quantum well or the band bottom of the ZnTe barrier layer. This observation shows very efficient optical phonon-mediated relaxation of hot excitons excited highly in the ZnTe conduction band through not only the ZnTe extended state but also localized state in the CdTe quantum dots reflecting strong exciton-LO phonon interaction of telluride compounds

Electric-dipole absorption resonating with longitudinal optical phonon-plasmon system and its effect on dispersion relations of interface phonon polariton modes in metal/semiconductor-stripe structures

Science.gov (United States)

Sakamoto, Hironori; Takeuchi, Eito; Yoshida, Kouki; Morita, Ken; Ma, Bei; Ishitani, Yoshihiro

2018-01-01

Interface phonon polaritons (IPhPs) in nano-structures excluding metal components are thoroughly investigated because they have lower loss in optical emission or absorption and higher quality factors than surface plasmon polaritons. In previous reports, it is found that strong infrared (IR) absorption is based on the interaction of p-polarized light and materials, and the resonance photon energy highly depends on the structure size and angle of incidence. We report the optical absorption by metal/semiconductor (bulk-GaAs and thin film-AlN)-stripe structures in THz to mid-IR region for the electric field of light perpendicular to the stripes, where both of s- and p-polarized light are absorbed. The absorption resonates with longitudinal optical (LO) phonon or LO phonon-plasmon coupling (LOPC) modes, and thus is independent of the angle of incidence or structure size. This absorption is attributed to the electric dipoles by the optically induced polarization charges at the metal/semiconductor, heterointerfaces, or interfaces of high electron density layers and depression ones. The electric permittivity is modified by the formation of these dipoles. It is found to be indispensable to utilize our form of altered permittivity to explain the experimental dispersion relations of metal/semiconductor-IPhP and SPhP in these samples. This analysis reveals that the IPhPs in the stripe structures of metal/AlN-film on a SiC substrate are highly confined in the AlN film, while the permittivity of the structures of metal/bulk-GaAs is partially affected by the electric-dipoles. The quality factors of the electric-dipole absorption are found to be 42-54 for undoped samples, and the value of 62 is obtained for Al/AlN-IPhP. It is thought that metal-contained structures are not obstacles to mode energy selectivity in phonon energy region of semiconductors.

Electron mobility limited by optical phonons in wurtzite InGaN/GaN core-shell nanowires

Science.gov (United States)

Liu, W. H.; Qu, Y.; Ban, S. L.

2017-09-01

Based on the force-balance and energy-balance equations, the optical phonon-limited electron mobility in InxGa1-xN/GaN core-shell nanowires (CSNWs) is discussed. It is found that the electrons tend to distribute in the core of the CSNWs due to the strong quantum confinement. Thus, the scattering from first kind of the quasi-confined optical (CO) phonons is more important than that from the interface (IF) and propagating (PR) optical phonons. Ternary mixed crystal and size effects on the electron mobility are also investigated. The results show that the PR phonons exist while the IF phonons disappear when the indium composition x < 0.047, and vice versa. Accordingly, the total electron mobility μ first increases and then decreases with indium composition x, and reaches a peak value of approximately 3700 cm2/(V.s) when x = 0.047. The results also show that the mobility μ increases as increasing the core radius of CSNWs due to the weakened interaction between the electrons and CO phonons. The total electron mobility limited by the optical phonons exhibits an obvious enhancement as decreasing temperature or increasing line electron density. Our theoretical results are expected to be helpful to develop electronic devices based on CSNWs.

High-speed asynchronous optical sampling for high-sensitivity detection of coherent phonons

International Nuclear Information System (INIS)

Dekorsy, T; Taubert, R; Hudert, F; Schrenk, G; Bartels, A; Cerna, R; Kotaidis, V; Plech, A; Koehler, K; Schmitz, J; Wagner, J

2007-01-01

A new optical pump-probe technique is implemented for the investigation of coherent acoustic phonon dynamics in the GHz to THz frequency range which is based on two asynchronously linked femtosecond lasers. Asynchronous optical sampling (ASOPS) provides the performance of on all-optical oscilloscope and allows us to record optically induced lattice dynamics over nanosecond times with femtosecond resolution at scan rates of 10 kHz without any moving part in the set-up. Within 1 minute of data acquisition time signal-to-noise ratios better than 10 7 are achieved. We present examples of the high-sensitivity detection of coherent phonons in superlattices and of the coherent acoustic vibration of metallic nanoparticles

Temperature dependence of Raman scattering by optical phonons in ZnTe

International Nuclear Information System (INIS)

Simmonds, P.E.; Martin, A.D.

1987-01-01

Measurements of the temperature dependence of Raman scattering by optical phonons between temperatures 5 K and 293 K in the II-VI semiconductor ZnTe are reported. Typical Raman spectra for ZnTe at different temperatures are shown and values of the measured LO and TO phonon Raman shifts and linewidths are given for T = 5, 77, and 293 K. The measured linewidth of the LO Raman line as a function of temperature is plotted and compared with model predictions based on various three- and four-phonon processes

Surface phonon polaritons in semi-infinite semiconductor superlattices

International Nuclear Information System (INIS)

Nkoma, J.S.

1986-07-01

Surface phonon polaritons in a semi-infinite semiconductor superlattice bounded by vacuum are studied. The modes associated with the polaritons are obtained and used to obtain the dispersion relation. Numerical results show that polariton bands exist between the TO and LO phonon frequencies, and are found to approach two surface mode frequencies in the limit of large tangential wave vector. Dependency of frequencies on the ratio of layer thicknesses is shown. Results are illustrated by a GaAs-GaP superlattice bounded by vacuum. (author)

Optical phonon modes of wurtzite InP

Science.gov (United States)

Gadret, E. G.; de Lima, M. M.; Madureira, J. R.; Chiaramonte, T.; Cotta, M. A.; Iikawa, F.; Cantarero, A.

2013-03-01

Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering spectroscopy. The wires were grown along the [0001] axis by the vapor-liquid-solid method. The A1(TO), E2h, and E1(TO) phonon modes of the wurtzite symmetry were identified by using light linearly polarized along different directions in backscattering configuration. Additionally, forbidden longitudinal optical modes have also been observed. Furthermore, by applying an extended 11-parameter rigid-ion model, the complete dispersion relations of InP in the wurtzite phase have been calculated, showing a good agreement with the Raman experimental data.

Zero-phonon lines and electron–phonon interaction characteristics of near-surface layer radiation color centers in lithium fluoride

Energy Technology Data Exchange (ETDEWEB)

Voitovich, A.P., E-mail: voitovich@ifanbel.bas-net.by [Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimosti Avenue, 220072 Minsk (Belarus); Kalinov, V.S. [Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimosti Avenue, 220072 Minsk (Belarus); Mudryi, A.V. [Scientific-Practical Materials Research Center, National Academy of Sciences of Belarus, 19 Brovka Street, 220072 Minsk (Belarus); Pavlovskii, V.N.; Runets, L.P.; Svitsiankou, I.E. [Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimosti Avenue, 220072 Minsk (Belarus)

2016-04-15

Zero-phonon lines have been registered in photoluminescence spectra of near-surface layer radiation color centers in lithium fluoride nanocrystals. They have been assigned to transitions of the definite types centers. The frequencies of phonons participating in the transitions of the different type centers located both in the near-surface layer and in the crystal bulk have been measured and compared. The Huang-Rhys parameters for the transitions of these centers have been determined. It has been found that the Huang-Rhys parameters for the studied transitions in the near-surface layer centers of the certain composition are less than for those in the crystal bulk centers of the same composition. This feature is connected with the difference of the electron density distribution in defects. Temperature dependences of the zero-phonon lines widths and shifts have been measured. It has been determined that both widths and shifts grow faster with the increase of a temperature for the defects transitions with the lesser Huang-Rhys parameters. Phonons lifetimes are estimated from the experimental data.

Zero-phonon lines and electron–phonon interaction characteristics of near-surface layer radiation color centers in lithium fluoride

International Nuclear Information System (INIS)

Voitovich, A.P.; Kalinov, V.S.; Mudryi, A.V.; Pavlovskii, V.N.; Runets, L.P.; Svitsiankou, I.E.

2016-01-01

Zero-phonon lines have been registered in photoluminescence spectra of near-surface layer radiation color centers in lithium fluoride nanocrystals. They have been assigned to transitions of the definite types centers. The frequencies of phonons participating in the transitions of the different type centers located both in the near-surface layer and in the crystal bulk have been measured and compared. The Huang-Rhys parameters for the transitions of these centers have been determined. It has been found that the Huang-Rhys parameters for the studied transitions in the near-surface layer centers of the certain composition are less than for those in the crystal bulk centers of the same composition. This feature is connected with the difference of the electron density distribution in defects. Temperature dependences of the zero-phonon lines widths and shifts have been measured. It has been determined that both widths and shifts grow faster with the increase of a temperature for the defects transitions with the lesser Huang-Rhys parameters. Phonons lifetimes are estimated from the experimental data.

Surface phonons and elastic surface waves

Science.gov (United States)

Büscher, H.; Klein-Heßling, W.; Ludwig, W.

Theoretical investigations on the dynamics of the (001), (110) and (111) surfaces of some cubic metals (Ag, Cu, Ni) will be reviewed. Both, lattice dynamical and continuum theoretical results are obtained via a Green's function formalism. The main attitude of this paper is the comparison of our results with experiments and with results obtained via slab-calculations. The calculation of elastic surface waves has been performed using a modified surface-green-function-matching method. We have used two different approaches of calculation the bulk Green's function (a) using the spectral representation and (b) a method, what works on residues. The investigations are carried out using shortrange phenomenological potentials. The atomic force constants in the first surface layers are modified to describe surface phonon anomalies, observed by experiments. In the case of Ag (100) and Ag(110) we conclude that the detection of odd symmetry shear modes by Erskine et al. [1 a, b] was not very accurate.

Surface phonons and elastic surface waves

International Nuclear Information System (INIS)

Buescher, H.; Klein-Hessling, W.; Ludwig, W.

1993-01-01

Theoretical investigations on the dynamics of the (001), (110) and (111) surfaces of some cubic metals (Ag, Cu, Ni) will be reviewed. Both, lattice dynamical and continuum theoretical results are obtained via a Green's function formalism. The main attitude of this paper is the comparison of our results with experiments and with results obtained via slab-calculations. The calculation of elastic surface waves has been performed using a modified surface-green-function-matching method. We have used two different approaches of calculation the bulk Green's function (a) using the spectral representation and (b) a method, what works on residues. The investigations are carried out using shortrange phenomenological potentials. The atomic force constants in the first surface layers are modified to describe surface phonon anomalies, observed by experiments. In the case of Ag(100) and Ag(110) we conclude that the detection of odd symmetry shear modes by Erskine et al. was not very accurate. (orig.)

Thermal conductivity of electron-doped CaMnO3 perovskites: Local lattice distortions and optical phonon thermal excitation

International Nuclear Information System (INIS)

Wang Yang; Sui Yu; Wang Xianjie; Su Wenhui; Liu Xiaoyang; Fan, Hong Jin

2010-01-01

The thermal transport properties of a series of electron-doped CaMnO 3 perovskites have been investigated. Throughout the temperature range 5-300 K, phonon thermal conductivity is dominant, and both electron and spin wave contributions are negligible. The short phonon mean free paths in this system result in the relatively low thermal conductivities. The strong phonon scatterings stem from the A-site mismatch and bond-length fluctuations induced by local distortions of MnO 6 octahedra. The thermal conductivity in the magnetically ordered state is enhanced as a result of the decrease in spin-phonon scattering. The results also indicate that above the magnetic ordering temperature, observable thermal excitation of optical phonons occurs. The contribution of optical phonons to thermal conductivity becomes non-negligible and is proposed to play an important role in the glass-like thermal transport behavior (i.e. positive temperature dependence of the thermal conductivity) in the paramagnetic state. These features can be understood in terms of an expression of thermal conductivity that includes both acoustic and optical phonon terms.

Phonon anomalies and electron-phonon coupling of metal surfaces and thin films; Phononenanomalien und Elektron-Phonon-Kopplung an Metalloberflaechen und duennen Schichten

Energy Technology Data Exchange (ETDEWEB)

Flach, B.

2000-01-01

This thesis has two topics: One is the investigation of an adsorbate induced phonon anomaly on W(110) and Mo{sub 1-x}Re{sub x}(110) (x = 5, 15, 25%) with inelastic helium atom scattering (HAS). The other one is the study of the growth, morphology and dynamics of ultra-thin lithium films deposited on W(110). In 1992 a giant phonon anomaly was found by J. Luedecke on the hydrogen saturated W(110) and Mo(110) surfaces. The anomaly consists of a deep and sharp indentation in the phonon dispersion curves in which the phonon energy nearly drops to zero ({omega}{sub 1}). In addition, a small and broad dip in the surface Rayleigh mode is observed ({omega}{sub 2}). The anomaly appears in the anti {gamma}-H- as well as in the anti {gamma}-S-direction of the surface Brillouin zone (SBZ). Since its first discovery, numerous other experimental and theoretical studies have followed. In the present work the effects is reinvestigated and experimental parameters, such as the crystal temperature and the incident energy, were changed in order to study their influence on the anomalous phonon behavior. In the case of H/Mo(110) the substrate was changed as well by alloying with small amounts of rhenium. In the present experiments a strong crystal temperature dependence of the {omega}{sub 2}-branch was found which leads to lower energies at the 'dip' for smaller temperatures, while the {omega}{sub 1}-anomaly remains unchanged. Such behavior agrees well with the picture that the {omega}{sub 2}-branch is due to a Kohn anomaly. (orig.)

Ab initio study of the electron-phonon coupling at the Cr(001) surface

Science.gov (United States)

Peters, L.; Rudenko, A. N.; Katsnelson, M. I.

2018-04-01

It is experimentally well established that the Cr(001) surface exhibits a sharp resonance around the Fermi level. However, there is no consensus about its physical origin. It is proposed to be either due to a single particle dz2 surface state renormalized by electron-phonon coupling or the orbital Kondo effect involving the degenerate dx z/ dy z states. In this paper we examine the electron-phonon coupling of the Cr(001) surface by means of ab-initio calculations in the form of density functional perturbation theory. More precisely, the electron-phonon mass-enhancement factor of the surface layer is investigated for the 3d states. For the majority and minority spin dz2 surface states we find values of 0.19 and 0.16. We show that these calculated electron-phonon mass-enhancement factors are not in agreement with the experimental data even if we use realistic values for the temperature range and surface Debye frequency for the fit of the experimental data. More precisely, then experimentally an electron-phonon mass-enhancement factor of 0.70 ±0.10 is obtained, which is not in agreement with our calculated values of 0.19 and 0.16. Our findings suggest that the experimentally observed resonance at the Cr(001) surface is not due to electron-phonon effects but due to electron-electron correlation effects.

Intense coherent longitudinal optical phonons in CuI thin films under exciton-excitation conditions

International Nuclear Information System (INIS)

Kojima, O.; Mizoguchi, K.; Nakayama, M..

2005-01-01

We have investigated the dynamical properties of the coherent longitudinal optical (LO) phonon in CuI thin films grown on a NaCl substrate by vacuum deposition. The intense coherent LO phonon in the CuI thin film is observed under the exciton-excitation conditions. Moreover, the pump-energy dependence of the amplitude of the coherent LO phonon shows peaks at the heavy-hole and light-hole exciton energies. The enhancement of the coherent LO phonon under the exciton-resonance condition is much larger than that in an ordinary semiconductor quantum well system such as a GaAs/AlAs one. These facts demonstrate that the intense coherent LO phonon is generated under the exciton-excitation condition in a material with a strong exciton-phonon interaction such as CuI

Emergence of an Out-of-Plane Optical Phonon (ZO) Kohn Anomaly in Quasifreestanding Epitaxial Graphene.

Science.gov (United States)

Politano, Antonio; de Juan, Fernando; Chiarello, Gennaro; Fertig, Herbert A

2015-08-14

In neutral graphene, two prominent cusps known as Kohn anomalies are found in the phonon dispersion of the highest optical phonon at q=Γ (LO branch) and q=K (TO branch), reflecting a significant electron-phonon coupling (EPC) to undoped Dirac electrons. In this work, high-resolution electron energy loss spectroscopy is used to measure the phonon dispersion around the Γ point in quasifreestanding graphene epitaxially grown on Pt(111). The Kohn anomaly for the LO phonon is observed at finite momentum q~2k_{F} from Γ, with a shape in excellent agreement with the theory and consistent with known values of the EPC and the Fermi level. More strikingly, we also observe a Kohn anomaly at the same momentum for the out-of-plane optical phonon (ZO) branch. This observation is the first direct evidence of the coupling of the ZO mode with Dirac electrons, which is forbidden for freestanding graphene but becomes allowed in the presence of a substrate. Moreover, we estimate the EPC to be even greater than that of the LO mode, making graphene on Pt(111) an optimal system to explore the effects of this new coupling in the electronic properties.

Experimental evidence of zone-center optical phonon softening by accumulating holes in thin Ge

Directory of Open Access Journals (Sweden)

Shoichi Kabuyanagi

2016-01-01

Full Text Available We discuss the impact of free carriers on the zone-center optical phonon frequency in germanium (Ge. By taking advantage of the Ge-on-insulator structure, we measured the Raman spectroscopy by applying back-gate bias. Phonon softening by accumulating holes in Ge film was clearly observed. This fact strongly suggests that the phonon softening in heavily-doped Ge is mainly attributed to the free carrier effect rather than the dopant atom counterpart. Furthermore, we propose that the free carrier effect on phonon softening is simply understandable from the viewpoint of covalent bonding modification by free carriers.

Observation of coherent optical phonons excited by femtosecond laser radiation in Sb films by ultrafast electron diffraction method

Energy Technology Data Exchange (ETDEWEB)

Mironov, B. N.; Kompanets, V. O.; Aseev, S. A., E-mail: isanfemto@yandex.ru [Russian Academy of Sciences, Institute of Spectroscopy (Russian Federation); Ischenko, A. A. [Moscow Technological University, Institute of High Chemical Technologies (Russian Federation); Kochikov, I. V. [Moscow State University (Russian Federation); Misochko, O. V. [Russian Academy of Sciences, Institute of Solid State Physics (Russian Federation); Chekalin, S. V.; Ryabov, E. A. [Russian Academy of Sciences, Institute of Spectroscopy (Russian Federation)

2017-03-15

The generation of coherent optical phonons in a polycrystalline antimony film sample has been investigated using femtosecond electron diffraction method. Phonon vibrations have been induced in the Sb sample by the main harmonic of a femtosecond Ti:Sa laser (λ = 800 nm) and probed by a pulsed ultrashort photoelectron beam synchronized with the pump laser. The diffraction patterns recorded at different times relative to the pump laser pulse display oscillations of electron diffraction intensity corresponding to the frequencies of vibrations of optical phonons: totally symmetric (A{sub 1g}) and twofold degenerate (E{sub g}) phonon modes. The frequencies that correspond to combinations of these phonon modes in the Sb sample have also been experimentally observed.

Semiclassical multi-phonon theory for atom-surface scattering: Application to the Cu(111) system.

Science.gov (United States)

Daon, Shauli; Pollak, Eli

2015-05-07

The semiclassical perturbation theory of Hubbard and Miller [J. Chem. Phys. 80, 5827 (1984)] is further developed to include the full multi-phonon transitions in atom-surface scattering. A practically applicable expression is developed for the angular scattering distribution by utilising a discretized bath of oscillators, instead of the continuum limit. At sufficiently low surface temperature good agreement is found between the present multi-phonon theory and the previous one-, and two-phonon theory derived in the continuum limit in our previous study [Daon, Pollak, and Miret-Artés, J. Chem. Phys. 137, 201103 (2012)]. The theory is applied to the measured angular distributions of Ne, Ar, and Kr scattered from a Cu(111) surface. We find that the present multi-phonon theory substantially improves the agreement between experiment and theory, especially at the higher surface temperatures. This provides evidence for the importance of multi-phonon transitions in determining the angular distribution as the surface temperature is increased.

Tunable infrared reflectance by phonon modulation

Science.gov (United States)

Ihlefeld, Jon F.; Sinclair, Michael B.; Beechem, III, Thomas E.

2018-03-06

The present invention pertains to the use of mobile coherent interfaces in a ferroelectric material to interact with optical phonons and, ultimately, to affect the material's optical properties. In altering the optical phonon properties, the optical properties of the ferroelectric material in the spectral range near-to the phonon mode frequency can dramatically change. This can result in a facile means to change to the optical response of the ferroelectric material in the infrared.

Tunable infrared reflectance by phonon modulation

Energy Technology Data Exchange (ETDEWEB)

Ihlefeld, Jon F.; Sinclair, Michael B.; Beechem, III, Thomas E.

2018-03-06

The present invention pertains to the use of mobile coherent interfaces in a ferroelectric material to interact with optical phonons and, ultimately, to affect the material's optical properties. In altering the optical phonon properties, the optical properties of the ferroelectric material in the spectral range near-to the phonon mode frequency can dramatically change. This can result in a facile means to change to the optical response of the ferroelectric material in the infrared.

Molecular-dynamics theory of the temperature-dependent surface phonons of W(001)

International Nuclear Information System (INIS)

Wang, C.Z.; Fasolino, A.; Tosatti, E.

1987-04-01

We study the temperature-dependent zone-boundary surface phonons across the c(2x2)→1x1 reconstruction phase transition of the clean W(001) surface. Velocity-velocity correlations and hence the phonon spectral densities are calculated by molecular dynamics for the surface atoms of a finite thickness (001) slab, with interatomic potentials established in a previous study of the surface statics. Our calculated k = (1/2,1/2)(2π/a) surface phonon are dominated by three main low-frequency modes. Of these, the longitudinal and the shear horizontal are reconstruction-related and display critical broadening and softening at the phase transition, while the third, the shear vertical, is basically unaffected. The reconstruction phase mode, shear horizontal, appears to be responsible for the phase fluctuations which destroy long-range order at the transition. (author). 30 refs, 12 figs

Surface strain engineering through Tb doping to study the pressure dependence of exciton-phonon coupling in ZnO nanoparticles

International Nuclear Information System (INIS)

Sharma, A.; Dhar, S.; Singh, B. P.; Nayak, C.; Bhattacharyya, D.; Jha, S. N.

2013-01-01

A compressive hydrostatic strain has been found to develop in the ZnO lattice as a result of accumulation of Tb ions on the surface of the nanoparticles for Tb mole-fraction less than 0.04. This hydrostatic strain can be controlled up to ≈14 GPa by varying the Tb mole-fraction. Here, we have utilized this novel technique of surface strain engineering through Tb doping for introducing hydrostatic compressive strain in the lattice to study the pressure dependent electronic and vibrational properties of ZnO nanoparticles. Our study reveals that when subjected to pressure, nanoparticles of ZnO behave quite differently than bulk in many aspects. Unlike bulk ZnO, which is reported to go through a wurtzite to rock-salt structural phase transition at ≈8 GPa, ZnO nanoparticles do not show such transition and remain in wurtzite phase even at 14 GPa of pressure. Furthermore, the Grüneisen parameters for the optical phonon modes are found to be order of magnitude smaller in ZnO nanoparticles as compared to bulk. Our study also suggests an increase of the dielectric constant with pressure, which is opposite to what has been reported for bulk ZnO. Interestingly, it has also been found that the exciton-phonon interaction depends strongly upon pressure in this system. The exciton-phonon coupling has been found to decrease as pressure increases. A variational technique has been adopted to theoretically calculate the exciton-LO phonon coupling coefficient in ZnO nanoparticles as a function of pressure, which shows a good agreement with the experimental results. These findings imply that surface engineering of ZnO nanoparticles with Tb could indeed be an efficient tool to enhance and control the optical performance of this material

Surface strain engineering through Tb doping to study the pressure dependence of exciton-phonon coupling in ZnO nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Sharma, A.; Dhar, S., E-mail: dhar@phy.iitb.ac.in; Singh, B. P. [Physics Department, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India); Nayak, C.; Bhattacharyya, D. [Applied Spectroscopy Division, Bhabha Atomic Research Centre, Mumbai-400085 (India); Jha, S. N. [Raja Ramanna Centre for Advanced Technology (RRCAT), Indore (India)

2013-12-07

A compressive hydrostatic strain has been found to develop in the ZnO lattice as a result of accumulation of Tb ions on the surface of the nanoparticles for Tb mole-fraction less than 0.04. This hydrostatic strain can be controlled up to ≈14 GPa by varying the Tb mole-fraction. Here, we have utilized this novel technique of surface strain engineering through Tb doping for introducing hydrostatic compressive strain in the lattice to study the pressure dependent electronic and vibrational properties of ZnO nanoparticles. Our study reveals that when subjected to pressure, nanoparticles of ZnO behave quite differently than bulk in many aspects. Unlike bulk ZnO, which is reported to go through a wurtzite to rock-salt structural phase transition at ≈8 GPa, ZnO nanoparticles do not show such transition and remain in wurtzite phase even at 14 GPa of pressure. Furthermore, the Grüneisen parameters for the optical phonon modes are found to be order of magnitude smaller in ZnO nanoparticles as compared to bulk. Our study also suggests an increase of the dielectric constant with pressure, which is opposite to what has been reported for bulk ZnO. Interestingly, it has also been found that the exciton-phonon interaction depends strongly upon pressure in this system. The exciton-phonon coupling has been found to decrease as pressure increases. A variational technique has been adopted to theoretically calculate the exciton-LO phonon coupling coefficient in ZnO nanoparticles as a function of pressure, which shows a good agreement with the experimental results. These findings imply that surface engineering of ZnO nanoparticles with Tb could indeed be an efficient tool to enhance and control the optical performance of this material.

Terahertz acoustic phonon detection from a compact surface layer of spherical nanoparticles powder mixture of aluminum, alumina and multi-walled carbon nanotube

Science.gov (United States)

Abouelsayed, A.; Ebrahim, M. R.; El hotaby, W.; Hassan, S. A.; Al-Ashkar, Emad

2017-10-01

We present terahertz spectroscopy study on spherical nanoparticles powder mixture of aluminum, alumina, and MWCNTs induced by surface mechanical attrition treatment (SMAT) of aluminum substrates. Surface alloying of AL, Al2O3 0.95% and MWCNTs 0.05% powder mixture was produced during SMAT process, where a compact surface layer of about 200 μm due to ball bombardment was produced from the mixture. Al2O3 alumina powder played a significant role in MWCNTs distribution on surface, those were held in deformation surface cites of micro-cavities due to SMAT process of Al. The benefits are the effects on resulted optical properties of the surface studied at the terahertz frequency range due to electrical isolation confinement effects and electronic resonance disturbances exerted on Al electronic resonance at the same range of frequencies. THz acoustic phonon around 0.53-0.6 THz (17-20 cm-1) were observed at ambient conditions for the spherical nanoparticles powder mixture of Al, Al2O3 and MWCNTs. These results suggested that the presence of Al2O3 and MWCNTs during SMAT process leads to the optically detection of such acoustic phonon in the THz frequency range.

The effects of optical phonon on the binding energy of bound polaron in a wurtzite ZnO/MgxZn1−xO quantum well

International Nuclear Information System (INIS)

Zhao, Feng-Qi; Guo, Zi-Zheng; Zhu, Jun

2014-01-01

An improved Lee-Low-Pines intermediate coupling method is used to study the energies and binding energies of bound polarons in a wurtzite ZnO/Mg x Zn 1−x O quantum well. The contributions from different branches of long-wave optical phonons, i.e., confined optical phonons, interface optical phonons, and half-space optical phonons are considered. In addition to electron-phonon interaction, the impurity-phonon interaction, and the anisotropy of material parameters, such as phonon frequency, electron effective mass, and dielectric constant, are also included in our computation. Ground-state energies, binding energies and detailed phonon contributions from various phonons as functions of well width, impurity position and composition are presented. Our result suggests that total phonon contribution to ground state and binding energies in the studied wurtzite ZnO/Mg 0.3 Zn 0.7 O quantum wells varies between 28–23 meV and 62–45 meV, respectively, which are much larger than the corresponding values (about 3.2–1.8 meV and 1.6–0.3 meV) in GaAs/Al 0.3 Ga 0.7 As quantum wells. For a narrower quantum well, the phonon contribution mainly comes from interface and half-space phonons, for a wider quantum well, most of phonon contribution originates from confined phonons. The contribution from all the phonon modes to binding energies increases slowly either when impurity moves far away from the well center in the z direction or with the increase in magnesium composition (x). It is found that different phonons have different influences on the binding energies of bound polarons. Furthermore, the phonon contributions to binding energies as functions of well width, impurity position, and composition are very different from one another. In general, the electron-optical phonon interaction and the impurity center-optical phonon interaction play an important role in electronic states of ZnO-based quantum wells and cannot be neglected.

Simulation of Terahertz Frequency Sources. Polar-Optical Phonon Enhancement of Harmonic Generation in Schottky Diodes

National Research Council Canada - National Science Library

Gelmont, Boris

2002-01-01

... polar optical vibration frequency When a high frequency input signal is applied to a frequency multiplier device polar-optical phonons can enhance the non-linearities inherent in this device, enabling...

Engineering absorption and blackbody radiation in the far-infrared with surface phonon polaritons on gallium phosphide

Energy Technology Data Exchange (ETDEWEB)

Streyer, W.; Law, S.; Rosenberg, A.; Wasserman, D. [Department of Electrical and Computer Engineering, University of Illinois Urbana Champaign, Urbana, Illinois 61801 (United States); Roberts, C.; Podolskiy, V. A. [Department of Physics and Applied Physics, University of Massachusetts Lowell, Lowell, Massachusetts 01854 (United States); Hoffman, A. J. [Department of Electrical Engineering, University of Notre Dame, South Bend, Indiana 46556 (United States)

2014-03-31

We demonstrate excitation of surface phonon polaritons on patterned gallium phosphide surfaces. Control over the light-polariton coupling frequencies is demonstrated by changing the pattern periodicity and used to experimentally determine the gallium phosphide surface phonon polariton dispersion curve. Selective emission via out-coupling of thermally excited surface phonon polaritons is experimentally demonstrated. Samples are characterized experimentally by Fourier transform infrared reflection and emission spectroscopy, and modeled using finite element techniques and rigorous coupled wave analysis. The use of phonon resonances for control of emissivity and excitation of bound surface waves offers a potential tool for the exploration of long-wavelength Reststrahlen band frequencies.

Elastic scattering by hot electrons and apparent lifetime of longitudinal optical phonons in gallium nitride

Energy Technology Data Exchange (ETDEWEB)

Khurgin, Jacob B., E-mail: jakek@jhu.edu [Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Bajaj, Sanyam; Rajan, Siddharth [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

2015-12-28

Longitudinal optical (LO) phonons in GaN generated in the channel of high electron mobility transistors (HEMT) are shown to undergo nearly elastic scattering via collisions with hot electrons. The net result of these collisions is the diffusion of LO phonons in the Brillouin zone causing reduction of phonon and electron temperatures. This previously unexplored diffusion mechanism explicates how an increase in electron density causes reduction of the apparent lifetime of LO phonons, obtained from the time resolved Raman studies and microwave noise measurements, while the actual decay rate of the LO phonons remains unaffected by the carrier density. Therefore, the saturation velocity in GaN HEMT steadily declines with increased carrier density, in a qualitative agreement with experimental results.

Acoustically-driven surface and hyperbolic plasmon-phonon polaritons in graphene/h-BN heterostructures on piezoelectric substrates

Science.gov (United States)

Fandan, R.; Pedrós, J.; Schiefele, J.; Boscá, A.; Martínez, J.; Calle, F.

2018-05-01

Surface plasmon polaritons in graphene couple strongly to surface phonons in polar substrates leading to hybridized surface plasmon-phonon polaritons (SPPPs). We demonstrate that a surface acoustic wave (SAW) can be used to launch propagating SPPPs in graphene/h-BN heterostructures on a piezoelectric substrate like AlN, where the SAW-induced surface modulation acts as a dynamic diffraction grating. The efficiency of the light coupling is greatly enhanced by the introduction of the h-BN film as compared to the bare graphene/AlN system. The h-BN interlayer not only significantly changes the dispersion of the SPPPs but also enhances their lifetime. The strengthening of the SPPPs is shown to be related to both the higher carrier mobility induced in graphene and the coupling with h-BN and AlN surface phonons. In addition to surface phonons, hyperbolic phonons polaritons (HPPs) appear in the case of multilayer h-BN films leading to hybridized hyperbolic plasmon-phonon polaritons (HPPPs) that are also mediated by the SAW. These results pave the way for engineering SAW-based graphene/h-BN plasmonic devices and metamaterials covering the mid-IR to THz range.

Anomalous dispersion of optical phonons in La2-xSrxCuO4 at low temperatures

International Nuclear Information System (INIS)

Bishoyi, K.C.; Rout, G.C.; Behera, S.N.

2001-01-01

Inelastic neutron scattering measurements of cuprate system show that a discontinuity in dispersion develops in the middle of the highest energy of optical phonon at low temperatures. We present here a microscopic theory to explain the phonon anomaly in doped cuprate system in normal state. Anti-ferromagnetism due to copper moments is introduced in the electronic Hamiltonian. Phonon coupling to the hybridisation between conduction electrons of the system and the doped f-electrons is incorporated. The phonon self energy due to electron-phonon interaction, which involves the electronic density response function, is evaluated explicitly by Zubarev's Green's function technique in finite temperature and small wave vector limit. The temperature dependence of phonon frequency and the anomalous phonon dispersion are calculated numerically and studied by varying the position of the f-level (ε f ), the effective electron-phonon coupling strength (g), staggered field (h), and the hybridisation parameter (V). (author)

Ultrafast electron-optical phonon scattering and quasiparticle lifetime in CVD-grown graphene.

Science.gov (United States)

Shang, Jingzhi; Yu, Ting; Lin, Jianyi; Gurzadyan, Gagik G

2011-04-26

Ultrafast quasiparticle dynamics in graphene grown by chemical vapor deposition (CVD) has been studied by UV pump/white-light probe spectroscopy. Transient differential transmission spectra of monolayer graphene are observed in the visible probe range (400-650 nm). Kinetics of the quasiparticle (i.e., low-energy single-particle excitation with renormalized energy due to electron-electron Coulomb, electron-optical phonon (e-op), and optical phonon-acoustic phonon (op-ap) interactions) was monitored with 50 fs resolution. Extending the probe range to near-infrared, we find the evolution of quasiparticle relaxation channels from monoexponential e-op scattering to double exponential decay due to e-op and op-ap scattering. Moreover, quasiparticle lifetimes of mono- and randomly stacked graphene films are obtained for the probe photon energies continuously from 1.9 to 2.3 eV. Dependence of quasiparticle decay rate on the probe energy is linear for 10-layer stacked graphene films. This is due to the dominant e-op intervalley scattering and the linear density of states in the probed electronic band. A dimensionless coupling constant W is derived, which characterizes the scattering strength of quasiparticles by lattice points in graphene.

One phonon resonant Raman scattering in free-standing quantum wires

International Nuclear Information System (INIS)

Zhao, Xiang-Fu; Liu, Cui-Hong

2007-01-01

The scattering intensity (SI) of a free-standing cylindrical semiconductor quantum wire for an electron resonant Raman scattering (ERRS) process associated with bulk longitudinal optical (LO) phonon modes and surface optical (SO) phonon modes is calculated separately for T=0 K. The Frohlich interaction is considered to illustrate the theory for GaAs and CdS systems. Electron states are confined within a free-standing quantum wire (FSW). Single parabolic conduction and valence bands are assumed. The selection rules are studied. Numerical results and a discussion are also presented for various radii of the cylindrical

Theoretical approach to the phonon modes and specific heat of germanium nanowires

Energy Technology Data Exchange (ETDEWEB)

Trejo, A.; López-Palacios, L.; Vázquez-Medina, R.; Cruz-Irisson, M., E-mail: irisson@ipn.mx

2014-11-15

The phonon modes and specific heat of Ge nanowires were computed using a first principles density functional theory scheme with a generalized gradient approximation and finite-displacement supercell algorithms. The nanowires were modeled in three different directions: [001], [111], and [110], using the supercell technique. All surface dangling bonds were saturated with Hydrogen atoms. The results show that the specific heat of the GeNWs at room temperature increases as the nanowire diameter decreases, regardless the orientation due to the phonon confinement and surface passivation. Also the phonon confinement effects could be observed since the highest optical phonon modes in the Ge vibration interval shifted to a lower frequency compared to their bulk counterparts.

Longitudinal polar optical phonons in InN/GaN single and double het- erostructures

Energy Technology Data Exchange (ETDEWEB)

Ardali, Sukru; Tiras, Engin [Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, Eskisehir 26470 (Turkey); Gunes, Mustafa; Balkan, Naci [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros [Microelectronics Research Group, IESL, FORTH and Physics Department, University of Crete, P.O. Box 1385, 71110 Heraklion-Crete (Greece)

2011-05-15

Longitudinal optical phonon energy in InN epi-layers has been determined independently from the Raman spectroscopy and temperature dependent Hall mobility measurements. Raman spectroscopy technique can be used to obtain directly the LO energy where LO phonon scattering dominates transport at high temperature. Moreover, the Hall mobility is determined by the scattering of electrons with LO phonons so the data for the temperature dependence of Hall mobility have been used to calculate the effective energy of longitudinal optical phonons.The samples investigated were (i) single heterojunction InN with thicknesses of 1.08, 2.07 and 4.7 {mu}m grown onto a 40 nm GaN buffer and (ii) GaN/InN/AlN double heterojunction samples with InN thicknesses of 0.4, 0.6 and 0.8 {mu}m. Hall Effect measurements were carried out as a function of temperature in the range between T = 1.7 and 275 K at fixed magnetic and electric fields. The Raman spectra were obtained at room temperature. In the experiments, the 532 nm line of a nitrogen laser was used as the excitation source and the light was incident onto the samples along of the growth direction (c-axis). The results, obtained from the two independent techniques suggest the following: (1) LO phonon energies obtained from momentum relaxation experiments are generally slightly higher than those obtained from the Raman spectra. (2) LO phonon energy for the single heterojunctions does not depend on the InN thickness. (3) In double heterostructures, with smaller InN thicknesses and hence with increased strain, LO phonon energy increases by 3% (experimental accuracy is < 1%) when the InN layer thickness increases from 400 to 800 nm (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Enhancement of acousto-optical coupling in two-dimensional air-slot phoxonic crystal cavities by utilizing surface acoustic waves

Energy Technology Data Exchange (ETDEWEB)

Ma, Tian-Xue [Institute of Engineering Mechanics, Beijing Jiaotong University, Beijing 100044 (China); Wang, Yue-Sheng, E-mail: yswang@bjtu.edu.cn [Institute of Engineering Mechanics, Beijing Jiaotong University, Beijing 100044 (China); Zhang, Chuanzeng [Department of Civil Engineering, University of Siegen, D-57068 Siegen (Germany)

2017-01-30

A phoxonic crystal is a periodically patterned material that can simultaneously localize optical and acoustic modes. The acousto-optical coupling in two-dimensional air-slot phoxonic crystal cavities is investigated numerically. The photons can be well confined in the slot owing to the large electric field discontinuity at the air/dielectric interfaces. Besides, the surface acoustic modes lead to the localization of the phonons near the air-slot. The high overlap of the photonic and phononic cavity modes near the slot results in a significant enhancement of the moving interface effect, and thus strengthens the total acousto-optical interaction. The results of two cavities with different slot widths show that the coupling strength is dependent on the slot width. It is expected to achieve a strong acousto-optical/optomechanical coupling in air-slot phoxonic crystal structures by utilizing surface acoustic modes. - Highlights: • Two-dimensional air-slot phoxonic crystal cavities which can confine simultaneously optical and acoustic waves are proposed. • The acoustic and optical waves are highly confined near/in the air-slot. • The high overlap of the photonic and phononic cavity modes significantly enhances the moving interface effect. • Different factors which affect the acousto-optical coupling are discussed.

Phonon Raman spectra of colloidal CdTe nanocrystals: effect of size, non-stoichiometry and ligand exchange

Directory of Open Access Journals (Sweden)

Lokteva Irina

2011-01-01

Full Text Available Abstract Resonant Raman study reveals the noticeable effect of the ligand exchange on the nanocrystal (NC surface onto the phonon spectra of colloidal CdTe NC of different size and composition. The oleic acid ligand exchange for pyridine ones was found to change noticeably the position and width of the longitudinal optical (LO phonon mode, as well as its intensity ratio to overtones. The broad shoulder above the LO peak frequency was enhanced and sharpened after pyridine treatment, as well as with decreasing NC size. The low-frequency mode around 100 cm-1 which is commonly related with the disorder-activated acoustical phonons appears in smaller NCs but is not enhanced after pyridine treatment. Surprisingly, the feature at low-frequency shoulder of the LO peak, commonly assigned to the surface optical phonon mode, was not sensitive to ligand exchange and concomitant close packing of the NCs. An increased structural disorder on the NC surface, strain and modified electron-phonon coupling is discussed as the possible reason of the observed changes in the phonon spectrum of ligand-exchanged CdTe NCs. PACS: 63.20.-e, 78.30.-j, 78.67.-n, 78.67.Bf

Phonon dynamics of the Sn/Ge(111)-(3 x 3) surface

International Nuclear Information System (INIS)

Farias, D.; Kaminski, W.; Lobo, J.; Ortega, J.; Hulpke, E.; Perez, R.; Flores, F.; Michel, E.G.

2004-01-01

We present a theoretical and experimental study on the phonon dynamics of the low-temperature Sn/Ge(111)-(3 x 3) structure. High-resolution helium atom scattering (HAS) data show that, besides the Rayleigh wave, there are three surface phonon branches with low dispersion related to the (3 x 3) surface phase. Their energies are approximately 6.5, 4, and 3meV at the Γ-bar point. In addition, we detect phonon peaks in the Q range 0.4-0.5A -1 at ∼2meV, which correspond to (3 x 3) folding of the Rayleigh wave. Ab initio DFT-GGA total energy calculations have been performed to determine the frequencies associated with the vertical displacements of the three Sn atoms in the unit cell. The values obtained are in good agreement with the experiment

Study of optical phonon modes of CdS nanoparticles using Raman

Indian Academy of Sciences (India)

In this paper we report the study of optical phonon modes of nanoparticles of CdS using Raman spectroscopy. Nanoparticle sample for the present study was synthesized through chemical precipitation technique. The CdS nanoparticles were then subjected to heat treatment at low temperature (150°C) for extended time ...

A highly attenuating and frequency tailorable annular hole phononic crystal for surface acoustic waves.

Science.gov (United States)

Ash, B J; Worsfold, S R; Vukusic, P; Nash, G R

2017-08-02

Surface acoustic wave (SAW) devices are widely used for signal processing, sensing and increasingly for lab-on-a-chip applications. Phononic crystals can control the propagation of SAW, analogous to photonic crystals, enabling components such as waveguides and cavities. Here we present an approach for the realisation of robust, tailorable SAW phononic crystals, based on annular holes patterned in a SAW substrate. Using simulations and experiments, we show that this geometry supports local resonances which create highly attenuating phononic bandgaps at frequencies with negligible coupling of SAWs into other modes, even for relatively shallow features. The enormous bandgap attenuation is up to an order-of-magnitude larger than that achieved with a pillar phononic crystal of the same size, enabling effective phononic crystals to be made up of smaller numbers of elements. This work transforms the ability to exploit phononic crystals for developing novel SAW device concepts, mirroring contemporary progress in photonic crystals.The control and manipulation of propagating sound waves on a surface has applications in on-chip signal processing and sensing. Here, Ash et al. deviate from standard designs and fabricate frequency tailorable phononic crystals with an order-of-magnitude increase in attenuation.

Mechanism of current modulation by optic phonon emission in heterojunction tunneling experiments

International Nuclear Information System (INIS)

Hanna, C.B.; Hellman, E.S.; Laughlin, R.B.

1985-01-01

We explain recent observations by Hickmott et al. of sequential longitudinal optic phonon emission in tunneling currents of GaAs-Al/sub x/Ga/sub 1-x/As heterojunctions in terms of inhomogeneous tunneling and a magnetopolaronic mass correction. 16 refs., 13 figs

Current & Heat Transport in Graphene Nanoribbons: Role of Non-Equilibrium Phonons

Science.gov (United States)

Pennington, Gary; Finkenstadt, Daniel

2010-03-01

The conducting channel of a graphitic nanoscale device is expected to experience a larger degree of thermal isolation when compared to traditional inversion channels of electronic devices. This leads to enhanced non-equilibrium phonon populations which are likely to adversely affect the mobility of graphene-based nanoribbons due to enhanced phonon scattering. Recent reports indicating the importance of carrier scattering with substrate surface polar optical phonons in carbon nanotubes^1 and graphene^2,3 show that this mechanism may allow enhanced heat removal from the nanoribbon channel. To investigate the effects of hot phonon populations on current and heat conduction, we solve the graphene nanoribbon multiband Boltzmann transport equation. Monte Carlo transport techniques are used since phonon populations may be tracked and updated temporally.^4 The electronic structure is solved using the NRL Tight-Binding method,^5 where carriers are scattered by confined acoustic, optical, edge and substrate polar optical phonons. [1] S. V. Rotkin et al., Nano Lett. 9, 1850 (2009). [2] J. H. Chen, C. Jang, S. Xiao, M. Ishigami and M. S. Fuhrer, Nature Nanotech. 3, 206 (2008). [3] V. Perebeinos and P. Avouris, arXiv:0910.4665v1 [cond-mat.mes-hall] (2009). [4] P. Lugli et al., Appl. Phys. Lett. 50, 1251 (1987). [5] D. Finkenstadt, G. Pennington & M.J. Mehl, Phys. Rev. B 76, 121405(R) (2007).

Correlation between surface phonon mode and luminescence in nanocrystalline CdS thin films: An effect of ion beam irradiation

International Nuclear Information System (INIS)

Kumar, Pragati; Agarwal, Avinash; Saxena, Nupur; Singh, Fouran; Gupta, Vinay

2014-01-01

The influence of swift heavy ion irradiation (SHII) on surface phonon mode (SPM) and green emission in nanocrystalline CdS thin films grown by chemical bath deposition is studied. The SHII of nanocrystalline CdS thin films is carried out using 70 MeV Ni ions. The micro Raman analysis shows that asymmetry and broadening in fundamental longitudinal optical (LO) phonon mode increases systematically with increasing ion fluence. To analyze the role of phonon confinement, spatial correlation model (SCM) is fitted to the experimental data. The observed deviation of SCM to the experimental data is further investigated by fitting the micro Raman spectra using two Lorentzian line shapes. It is found that two Lorentzian functions (LFs) provide better fitting than SCM fitting and facilitate to identify the contribution of SPM in the observed distortion of LO mode. The behavior of SPM as a function of ion fluence is studied to correlate the observed asymmetry (Γ a /Γ b ) and full width at half maximum of LO phonon mode and to understand the SHII induced enhancement of SPM. The ion beam induced interstitial and surface state defects in thin films, as observed by photoluminescence (PL) spectroscopy studies, may be the underlying reason for enhancement in SPM. PL studies also show enhancement in green luminescence with increase in ion fluence. PL analysis reveals that the variation in population density of surface state defects after SHII is similar to that of SPM. The correlation between SPM and luminescence and their dependence on ion irradiation fluence is explained with the help of thermal spike model.

Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires

International Nuclear Information System (INIS)

Schaefer-Nolte, E O; Stoica, T; Gotschke, T; Limbach, F A; Gruetzmacher, D; Calarco, R; Sutter, E; Sutter, P

2010-01-01

In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E 2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

Enhanced Light Scattering of the Forbidden longitudinal Optical Phonon Mode Studied by Micro-Raman Spectroscopy on Single InN nanowires

International Nuclear Information System (INIS)

Sutter, E.; Schafer-Nolte, E.O.; Stoica, T.; Gotschke, T.; Limbach, F.A.; Sutter, P.; Grutzmacher, D.; Calarco, R.

2010-01-01

In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires.

Science.gov (United States)

Schäfer-Nolte, E O; Stoica, T; Gotschke, T; Limbach, F A; Sutter, E; Sutter, P; Grützmacher, D; Calarco, R

2010-08-06

In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E(2) phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

Engineering dissipation with phononic spectral hole burning

Science.gov (United States)

Behunin, R. O.; Kharel, P.; Renninger, W. H.; Rakich, P. T.

2017-03-01

Optomechanics, nano-electromechanics, and integrated photonics have brought about a renaissance in phononic device physics and technology. Central to this advance are devices and materials supporting ultra-long-lived photonic and phononic excitations that enable novel regimes of classical and quantum dynamics based on tailorable photon-phonon coupling. Silica-based devices have been at the forefront of such innovations for their ability to support optical excitations persisting for nearly 1 billion cycles, and for their low optical nonlinearity. While acoustic phonon modes can persist for a similar number of cycles in crystalline solids at cryogenic temperatures, it has not been possible to achieve such performance in silica, as silica becomes acoustically opaque at low temperatures. We demonstrate that these intrinsic forms of phonon dissipation are greatly reduced (by >90%) by nonlinear saturation using continuous drive fields of disparate frequencies. The result is a form of steady-state phononic spectral hole burning that produces a wideband transparency window with optically generated phonon fields of modest (nW) powers. We developed a simple model that explains both dissipative and dispersive changes produced by phononic saturation. Our studies, conducted in a microscale device, represent an important step towards engineerable phonon dynamics on demand and the use of glasses as low-loss phononic media.

Direct measurements of surface scattering in Si nanosheets using a microscale phonon spectrometer: implications for Casimir-limit predicted by Ziman theory.

Science.gov (United States)

Hertzberg, Jared B; Aksit, Mahmut; Otelaja, Obafemi O; Stewart, Derek A; Robinson, Richard D

2014-02-12

Thermal transport in nanostructures is strongly affected by phonon-surface interactions, which are expected to depend on the phonon's wavelength and the surface roughness. Here we fabricate silicon nanosheets, measure their surface roughness (∼ 1 nm) using atomic force microscopy (AFM), and assess the phonon scattering rate in the sheets with a novel technique: a microscale phonon spectrometer. The spectrometer employs superconducting tunnel junctions (STJs) to produce and detect controllable nonthermal distributions of phonons from ∼ 90 to ∼ 870 GHz. This technique offers spectral resolution nearly 10 times better than a thermal conductance measurement. We compare measured phonon transmission rates to rates predicted by a Monte Carlo model of phonon trajectories, assuming that these trajectories are dominated by phonon-surface interactions and using the Ziman theory to predict phonon-surface scattering rates based on surface topology. Whereas theory predicts a diffuse surface scattering probability of less than 40%, our measurements are consistent with a 100% probability. Our nanosheets therefore exhibit the so-called "Casimir limit" at a much lower frequency than expected if the phonon scattering rates follow the Ziman theory for a 1 nm surface roughness. Such a result holds implications for thermal management in nanoscale electronics and the design of nanostructured thermoelectrics.

Manifestation of surface phonons in far infrared reflectivity of diamond-type semiconductors

Energy Technology Data Exchange (ETDEWEB)

Perez-Sanchez, F.L.; Perez-Rodriguez, F. [Instituto de Fisica, Universidad Autonoma de Puebla, Apdo. Post. J-48, Puebla, Pue. 72570 (Mexico)

2004-11-01

The coupling of surface phonons with light at (001) surfaces of diamond-structure crystals and its manifestation in far-infrared anisotropy spectra are theoretically studied. We apply the adiabatic bond charge model to describe short-range mechanical interactions together with long-range Coulomb forces and radiation fields, and we solve the corresponding system of coupled equations for the electromagnetic field and the lattice vibrations. We calculate far-infrared normal reflectance spectra of (001) surfaces of semi-infinite diamond-type crystals. In particular, we analyse reflectance spectra for the Si(001) (2 x 1) surface, which exhibit a resonance structure associated with the excitation of surface phonon modes. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Phonon impact on optical control schemes of quantum dots: Role of quantum dot geometry and symmetry

Science.gov (United States)

Lüker, S.; Kuhn, T.; Reiter, D. E.

2017-12-01

Phonons strongly influence the optical control of semiconductor quantum dots. When modeling the electron-phonon interaction in several theoretical approaches, the quantum dot geometry is approximated by a spherical structure, though typical self-assembled quantum dots are strongly lens-shaped. By explicitly comparing simulations of a spherical and a lens-shaped dot using a well-established correlation expansion approach, we show that, indeed, lens-shaped dots can be exactly mapped to a spherical geometry when studying the phonon influence on the electronic system. We also give a recipe to reproduce spectral densities from more involved dots by rather simple spherical models. On the other hand, breaking the spherical symmetry has a pronounced impact on the spatiotemporal properties of the phonon dynamics. As an example we show that for a lens-shaped quantum dot, the phonon emission is strongly concentrated along the direction of the smallest axis of the dot, which is important for the use of phonons for the communication between different dots.

Pump-probe studies of travelling coherent longitudinal acoustic phonon oscillations in GaAs

Energy Technology Data Exchange (ETDEWEB)

Xu, Y.; Qi, J.; Tolk, Norman [Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, 37235 (United States); Miller, J. [Naval air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Cho, Y.J.; Liu, X.; Furdyna, J.K. [Department of Physics, University of Notre Dame, Notre Dame, IN 46556 (United States); Shahbazyan, T.V. [Department of Physics, Jackson State University, MS 39217 (United States)

2008-07-01

We report comprehensive studies of long-lived oscillations in femtosecond optical pump-probe measurements on GaAs based systems. The oscillations arise from a photo-generated coherent longitudinal acoustic phonon wave at the sample surface, which subsequently travels from the surface into the GaAs substrate, thus providing information on the optical properties of the material as a function of time/depth. Wavelength-dependent studies of the oscillations near the bandgap of GaAs indicate strong correlations to the optical properties of GaAs. We also use the coherent longitudinal acoustic phonon waves to probe a thin buried Ga{sub 0.1}In{sub 0.9}As layers non-invasively. The observed phonon oscillations experience a reduction in amplitude and a phase change at wavelengths near the bandgap of the GaAs, when it passes through the thin Ga{sub x}In{sub 1-x}As layer. The layer depth and thicknesses can be extracted from the oscillation responses. A model has been developed that satisfactorily characterizes the experimental results. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Optical phonon scattering on electronic mobility in Al2O3/AlGaN/AlN/GaN heterostructures

Science.gov (United States)

Zhou, X. J.; Qu, Y.; Ban, S. L.; Wang, Z. P.

2017-12-01

Considering the built-in electric fields and the two-mode property of transverse optical phonons in AlGaN material, the electronic eigen-energies and wave functions are obtained by solving Schrödinger equation with the finite difference method. The dispersion relations and potentials of the optical phonons are given by the transfer matrix method. The mobility of the two dimensional electron gas influenced by the optical phonons in Al2O3/AlGaN/AlN/GaN heterostructures is investigated based on the theory of Lei-Ting force balance equation. It is found that the scattering from the half-space phonons is the main factor affecting the electronic mobility, and the influence of the other phonons can be ignored. The results show that the mobility decreases with increasing the thicknesses of Al2O3 and AlN layers, but there is no definite relationship between the mobility and the thickness of AlGaN barrier. The mobility is obviously reduced by increasing Al component in AlGaN crystal to show that the effect of ternary mixed crystals is important. It is also found that the mobility increases first and then decreases as the increment of the fixed charges, but decreases always with increasing temperature. The heterostructures constructed here can be good candidates as metal-oxide-semiconductor high-electron-mobility-transistors since they have higher electronic mobility due to the influence from interface phonons weakened by the AlN interlayer.

Ultrafast atomic-scale visualization of acoustic phonons generated by optically excited quantum dots

Directory of Open Access Journals (Sweden)

Giovanni M. Vanacore

2017-07-01

Full Text Available Understanding the dynamics of atomic vibrations confined in quasi-zero dimensional systems is crucial from both a fundamental point-of-view and a technological perspective. Using ultrafast electron diffraction, we monitored the lattice dynamics of GaAs quantum dots—grown by Droplet Epitaxy on AlGaAs—with sub-picosecond and sub-picometer resolutions. An ultrafast laser pulse nearly resonantly excites a confined exciton, which efficiently couples to high-energy acoustic phonons through the deformation potential mechanism. The transient behavior of the measured diffraction pattern reveals the nonequilibrium phonon dynamics both within the dots and in the region surrounding them. The experimental results are interpreted within the theoretical framework of a non-Markovian decoherence, according to which the optical excitation creates a localized polaron within the dot and a travelling phonon wavepacket that leaves the dot at the speed of sound. These findings indicate that integration of a phononic emitter in opto-electronic devices based on quantum dots for controlled communication processes can be fundamentally feasible.

Probing the interatomic potential of solids with strong-field nonlinear phononics

Science.gov (United States)

von Hoegen, A.; Mankowsky, R.; Fechner, M.; Först, M.; Cavalleri, A.

2018-03-01

Nonlinear optical techniques at visible frequencies have long been applied to condensed matter spectroscopy. However, because many important excitations of solids are found at low energies, much can be gained from the extension of nonlinear optics to mid-infrared and terahertz frequencies. For example, the nonlinear excitation of lattice vibrations has enabled the dynamic control of material functions. So far it has only been possible to exploit second-order phonon nonlinearities at terahertz field strengths near one million volts per centimetre. Here we achieve an order-of-magnitude increase in field strength and explore higher-order phonon nonlinearities. We excite up to five harmonics of the A1 (transverse optical) phonon mode in the ferroelectric material lithium niobate. By using ultrashort mid-infrared laser pulses to drive the atoms far from their equilibrium positions, and measuring the large-amplitude atomic trajectories, we can sample the interatomic potential of lithium niobate, providing a benchmark for ab initio calculations for the material. Tomography of the energy surface by high-order nonlinear phononics could benefit many aspects of materials research, including the study of classical and quantum phase transitions.

Correlation between surface phonon mode and luminescence in nanocrystalline CdS thin films: An effect of ion beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Kumar, Pragati, E-mail: pkumar.phy@gmail.com; Agarwal, Avinash [Department of Physics, Bareilly College, Bareilly 243 005, Uttar Pradesh (India); Saxena, Nupur; Singh, Fouran [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110 007 (India)

2014-07-28

The influence of swift heavy ion irradiation (SHII) on surface phonon mode (SPM) and green emission in nanocrystalline CdS thin films grown by chemical bath deposition is studied. The SHII of nanocrystalline CdS thin films is carried out using 70 MeV Ni ions. The micro Raman analysis shows that asymmetry and broadening in fundamental longitudinal optical (LO) phonon mode increases systematically with increasing ion fluence. To analyze the role of phonon confinement, spatial correlation model (SCM) is fitted to the experimental data. The observed deviation of SCM to the experimental data is further investigated by fitting the micro Raman spectra using two Lorentzian line shapes. It is found that two Lorentzian functions (LFs) provide better fitting than SCM fitting and facilitate to identify the contribution of SPM in the observed distortion of LO mode. The behavior of SPM as a function of ion fluence is studied to correlate the observed asymmetry (Γ{sub a}/Γ{sub b}) and full width at half maximum of LO phonon mode and to understand the SHII induced enhancement of SPM. The ion beam induced interstitial and surface state defects in thin films, as observed by photoluminescence (PL) spectroscopy studies, may be the underlying reason for enhancement in SPM. PL studies also show enhancement in green luminescence with increase in ion fluence. PL analysis reveals that the variation in population density of surface state defects after SHII is similar to that of SPM. The correlation between SPM and luminescence and their dependence on ion irradiation fluence is explained with the help of thermal spike model.

Impact of optical phonon scattering on inversion channel mobility in 4H-SiC trenched MOSFETs

Science.gov (United States)

Kutsuki, Katsuhiro; Kawaji, Sachiko; Watanabe, Yukihiko; Onishi, Toru; Fujiwara, Hirokazu; Yamamoto, Kensaku; Yamamoto, Toshimasa

2017-04-01

Temperature characteristics of the channel mobility were investigated for 4H-SiC trenched MOSFETs in the range from 30 to 200 °C. The conventional model of channel mobility limited by carrier scattering is based on Si-MOSFETs and shows a greatly different channel mobility from the experimental value, especially at high temperatures. On the other hand, our improved mobility model taking into account optical phonon scattering yielded results in excellent agreement with experimental results. Moreover, the major factors limiting the channel mobility were found to be Coulomb scattering in a low effective field (<0.7 MV/cm) and optical phonon scattering in a high effective field.

Hot-phonon generation in THz quantum cascade lasers

Science.gov (United States)

Spagnolo, V.; Vitiello, M. S.; Scamarcio, G.; Williams, B. S.; Kumar, S.; Hu, Q.; Reno, J. L.

2007-12-01

Observation of non-equilibrium optical phonons population associated with electron transport in THz quantum cascade lasers is reported. The phonon occupation number was measured by using a combination of micro-probe photoluminescence and Stokes/Anti-Stokes Raman spectroscopy. Energy balance analysis allows us to estimate the phonon relaxation rate, that superlinearly increases with the electrical power in the range 1.5 W - 1.95 W, above laser threshold. This observation suggests the occurrence of stimulated emission of optical phonons.

In rich In{sub 1-x}Ga{sub x}N: Composition dependence of longitudinal optical phonon energy

Energy Technology Data Exchange (ETDEWEB)

Tiras, E. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, CO4 3SQ Colchester (United Kingdom); Faculty of Science, Department of Physics, Anadolu University, Yunus Emre Campus, 26470 Eskisehir (Turkey); Gunes, M.; Balkan, N. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, CO4 3SQ Colchester (United Kingdom); Schaff, W.J. [Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853 (United States)

2010-01-15

The composition dependence of longitudinal optical (LO) phonon energies in undoped and Mg-doped In{sub 1-x}Ga{sub x}N samples are determined using Raman spectroscopy in the range of Ga fraction from x = 0 to x = 56%. The LO phonon energy varies from 73 meV for InN to 83 meV for In{sub 1-x}Ga{sub x}N with 56% Ga. Independent measurements of temperature dependent mobility at high temperatures where LO phonon scattering dominates the transport were also used to obtain the LO phonon energy for x = 0 and x = 20%. The results obtained from the two independent techniques compare extremely well. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Thermal conductance of a surface phonon-polariton crystal made up of polar nanorods

Energy Technology Data Exchange (ETDEWEB)

Ordonez-Miranda, Jose; Joulain, Karl; Ezzahri, Younes [Univ. de Poitiers, Futuroscope Chasseneuil (France). Inst. Pprime, CNRS

2017-05-01

We demonstrate that the energy transport of surface phonon-polaritons can be large enough to be observable in a crystal made up of a three-dimensional assembly of nanorods of silicon carbide. The ultralow phonon thermal conductivity of this nanostructure along with its high surface area-to-volume ratio allows the predominance of the polariton energy over that generated by phonons. The dispersion relation, propagation length, and thermal conductance of polaritons are numerically determined as functions of the radius and temperature of the nanorods. It is shown that the thermal conductance of a crystal with nanorods at 500 K and diameter (length) of 200 nm (20 μm) is 0.55 nW.K{sup -1}, which is comparable to the quantum of thermal conductance of polar nanowires.

Towards a Quantum Interface between Diamond Spin Qubits and Phonons in an Optical Trap

Science.gov (United States)

Ji, Peng; Momeen, M. Ummal; Hsu, Jen-Feng; D'Urso, Brian; Dutt, Gurudev

2014-05-01

We introduce a method to optically levitate a pre-selected nanodiamond crystal in air or vacuum. The nanodiamond containing nitrogen-vacancy (NV) centers is suspended on a monolayer of graphene transferred onto a patterned substrate. Laser light is focused onto the sample, using a home-built confocal microscope with a high numerical aperture (NA = 0.9) objective, simultaneously burning the graphene and creating a 3D optical trap that captures the falling nano-diamond at the beam waist. The trapped diamond is an ultra-high-Q mechanical oscillator, allowing us to engineer strong linear and quadratic coupling between the spin of the NV center and the phonon mode. The system could result in an ideal quantum interface between a spin qubit and vibrational phonon mode, potentially enabling applications in quantum information processing and sensing the development of quantum information storage and processing.

Polar optical phonons in a semiconductor quantum-well: The complete matching problem

International Nuclear Information System (INIS)

Nieto, J.M.; Comas, F.

2007-01-01

Confined polar optical phonons in a semiconductor quantum-well (QW) are studied by applying a phenomenological theory which was proposed a few years ago and is based on a continuum approach. This theory considers the coupled character of the electromechanical vibrations and takes due account of both the electric and mechanical boundary conditions. In the present work, we have applied the so-called complete matching problem in contrast with all previous published works on the subject, where more restrictive approximate boundary conditions has been applied. We also consider the effects of strains at the interfaces on the phonon spectra. Comparisons with previous works are made, while we focused on the study of a ZnTe/CdTe/ZnTe QW

Vacuum phonon tunneling.

Science.gov (United States)

Altfeder, Igor; Voevodin, Andrey A; Roy, Ajit K

2010-10-15

Field-induced phonon tunneling, a previously unknown mechanism of interfacial thermal transport, has been revealed by ultrahigh vacuum inelastic scanning tunneling microscopy (STM). Using thermally broadened Fermi-Dirac distribution in the STM tip as in situ atomic-scale thermometer we found that thermal vibrations of the last tip atom are effectively transmitted to sample surface despite few angstroms wide vacuum gap. We show that phonon tunneling is driven by interfacial electric field and thermally vibrating image charges, and its rate is enhanced by surface electron-phonon interaction.

Influence of screening on longitudinal-optical phonon scattering in quantum cascade lasers

International Nuclear Information System (INIS)

Ezhov, Ivan; Jirauschek, Christian

2016-01-01

We theoretically investigate the influence of screening on electron-longitudinal optical phonon scattering in quantum cascade lasers. By employing ensemble Monte Carlo simulations, an advanced screening model based on the random-phase approximation is compared to the more elementary Thomas-Fermi and Debye models. For mid-infrared structures, and to a lesser extent also for terahertz designs, the inclusion of screening is shown to affect the simulated current and optical output power. Furthermore, it is demonstrated that by using the electron temperature rather than the lattice temperature, the Debye model can be significantly improved

The influence of the surface parameter changes onto the phonon states in ultrathin crystalline films

Science.gov (United States)

Šetrajčić, Jovan P.; Ilić, Dušan I.; Jaćimovski, Stevo K.

2018-04-01

In this paper, we have analytically investigated how the changes in boundary surface parameters influence the phonon dispersion law in ultrathin films of the simple cubic crystalline structure. Spectra of possible phonon states are analyzed using the method of two-time dependent Green's functions and for the diverse combination of boundary surface parameters, this problem was presented numerically and graphically. It turns out that for certain values and combinations of parameters, displacement of dispersion branches outside of bulk zone occurs, leading to the creation of localized phonon states. This fact is of great importance for the heat removal, electrical conductivity and superconducting properties of ultrathin films.

Phonon engineering for nanostructures.

Energy Technology Data Exchange (ETDEWEB)

Aubry, Sylvie (Stanford University); Friedmann, Thomas Aquinas; Sullivan, John Patrick; Peebles, Diane Elaine; Hurley, David H. (Idaho National Laboratory); Shinde, Subhash L.; Piekos, Edward Stanley; Emerson, John Allen

2010-01-01

Understanding the physics of phonon transport at small length scales is increasingly important for basic research in nanoelectronics, optoelectronics, nanomechanics, and thermoelectrics. We conducted several studies to develop an understanding of phonon behavior in very small structures. This report describes the modeling, experimental, and fabrication activities used to explore phonon transport across and along material interfaces and through nanopatterned structures. Toward the understanding of phonon transport across interfaces, we computed the Kapitza conductance for {Sigma}29(001) and {Sigma}3(111) interfaces in silicon, fabricated the interfaces in single-crystal silicon substrates, and used picosecond laser pulses to image the thermal waves crossing the interfaces. Toward the understanding of phonon transport along interfaces, we designed and fabricated a unique differential test structure that can measure the proportion of specular to diffuse thermal phonon scattering from silicon surfaces. Phonon-scale simulation of the test ligaments, as well as continuum scale modeling of the complete experiment, confirmed its sensitivity to surface scattering. To further our understanding of phonon transport through nanostructures, we fabricated microscale-patterned structures in diamond thin films.

Linear and non-linear infrared response of one-dimensional vibrational Holstein polarons in the anti-adiabatic limit: Optical and acoustical phonon models

Science.gov (United States)

Falvo, Cyril

2018-02-01

The theory of linear and non-linear infrared response of vibrational Holstein polarons in one-dimensional lattices is presented in order to identify the spectral signatures of self-trapping phenomena. Using a canonical transformation, the optical response is computed from the small polaron point of view which is valid in the anti-adiabatic limit. Two types of phonon baths are considered: optical phonons and acoustical phonons, and simple expressions are derived for the infrared response. It is shown that for the case of optical phonons, the linear response can directly probe the polaron density of states. The model is used to interpret the experimental spectrum of crystalline acetanilide in the C=O range. For the case of acoustical phonons, it is shown that two bound states can be observed in the two-dimensional infrared spectrum at low temperature. At high temperature, analysis of the time-dependence of the two-dimensional infrared spectrum indicates that bath mediated correlations slow down spectral diffusion. The model is used to interpret the experimental linear-spectroscopy of model α-helix and β-sheet polypeptides. This work shows that the Davydov Hamiltonian cannot explain the observations in the NH stretching range.

Surface acoustic waves in two dimensional phononic crystal with anisotropic inclusions

Directory of Open Access Journals (Sweden)

Ketata H.

2012-06-01

Full Text Available An analysis is given to the band structure of the two dimensional solid phononic crystal considered as a semi infinite medium. The lattice includes an array of elastic anisotropic materials with different shapes embedded in a uniform matrix. For illustration two kinds of phononic materials are assumed. A particular attention is devoted to the computational procedure which is mainly based on the plane wave expansion (PWE method. It has been adapted to Matlab environment. Numerical calculations of the dispersion curves have been achieved by introducing particular functions which transform motion equations into an Eigen value problem. Significant improvements are obtained by increasing reasonably the number of Fourier components even when a large elastic mismatch is assumed. Such approach can be generalized to different types of symmetry and permit new physical properties as piezoelectricity to be added. The actual semi infinite phononic structure with a free surface has been shown to support surface acoustic waves (SAW. The obtained dispersion curves reveal band gaps in the SAW branches. It has been found that the influence, of the filling factor and anisotropy on their band gaps, is different from that of bulk waves.

Electrons and Phonons in Semiconductor Multilayers

Science.gov (United States)

Ridley, B. K.

1996-11-01

This book provides a detailed description of the quantum confinement of electrons and phonons in semiconductor wells, superlattices and quantum wires, and shows how this affects their mutual interactions. It discusses the transition from microscopic to continuum models, emphasizing the use of quasi-continuum theory to describe the confinement of optical phonons and electrons. The hybridization of optical phonons and their interactions with electrons are treated, as are other electron scattering mechanisms. The book concludes with an account of the electron distribution function in three-, two- and one-dimensional systems, in the presence of electrical or optical excitation. This text will be of great use to graduate students and researchers investigating low-dimensional semiconductor structures, as well as to those developing new devices based on these systems.

Ultrafast optical generation of squeezed magnon states and long lifetime coherent LO phonons

Science.gov (United States)

Zhao, Jimin

2005-12-01

Ultrafast optical pulses have been used to generate, probe, and control low-energy elementary excitations in crystals. In particular, we report the first experimental demonstration of the generation of quantum squeezed states of magnons (collective spin-wave excitations) in a magnetic material, and new progress in experimental investigation of anharmonic interactions in a semiconductor. The mechanism for the magnon squeezing is two-magnon impulsive stimulated Raman scattering (ISRS). Femtosecond laser pulses have been used to coherently correlate degenerate counter-propagating magnons in the antiferromagnetic insulator MnF2. In the squeezed state, fluctuations of the magnetization of a crystallographic unit cell vary periodically in time and are reduced below that of the ground-state quantum noise. Similar experiments were also performed in another antiferromagnetic insulator, FeF2, for which the squeezing effect is one order of magnitude larger. We have also investigated the anharmonic interaction of the low-frequency E2 phonon in ZnO through ISRS. Temperature dependence of the linewidth and frequency indicates that the two-phonon up-conversion process is the dominant decay channel and isotopic disorder may be the main limit on the lifetime at low temperature. We have observed the longest lifetime of an optical phonon mode in a solid (211 ps at 5 K). And we have found that pump-probe experiments, compared with spontaneous Raman spectroscopy, have extremely high accuracy in determining the frequency of a low-lying excitation.

Optical phonons in cubic AlxGa1-xN approached by the modified random element isodisplacement model

International Nuclear Information System (INIS)

Liu, M.S.; Bursill, L.A.; Prawer, S.

1998-01-01

The behaviour of longitudinal and transverse optical phonons in cubic Al x Ga l-x N are derived theoretically as a function of the concentration x (0≤x≤1). The calculation is based on a Modified Random Element Isodisplacement model which considers the interactions from the nearest neighbor and second neighbor atoms. We find one-mode behavior in Al x Ga l-x N where the phonon frequency in general varies continuously and approximately linearly with x. (author)

Four-phonon scattering significantly reduces intrinsic thermal conductivity of solids

Science.gov (United States)

Feng, Tianli; Lindsay, Lucas; Ruan, Xiulin

2017-10-01

For decades, the three-phonon scattering process has been considered to govern thermal transport in solids, while the role of higher-order four-phonon scattering has been persistently unclear and so ignored. However, recent quantitative calculations of three-phonon scattering have often shown a significant overestimation of thermal conductivity as compared to experimental values. In this Rapid Communication we show that four-phonon scattering is generally important in solids and can remedy such discrepancies. For silicon and diamond, the predicted thermal conductivity is reduced by 30% at 1000 K after including four-phonon scattering, bringing predictions in excellent agreement with measurements. For the projected ultrahigh-thermal conductivity material, zinc-blende BAs, a competitor of diamond as a heat sink material, four-phonon scattering is found to be strikingly strong as three-phonon processes have an extremely limited phase space for scattering. The four-phonon scattering reduces the predicted thermal conductivity from 2200 to 1400 W/m K at room temperature. The reduction at 1000 K is 60%. We also find that optical phonon scattering rates are largely affected, being important in applications such as phonon bottlenecks in equilibrating electronic excitations. Recognizing that four-phonon scattering is expensive to calculate, in the end we provide some guidelines on how to quickly assess the significance of four-phonon scattering, based on energy surface anharmonicity and the scattering phase space. Our work clears the decades-long fundamental question of the significance of higher-order scattering, and points out ways to improve thermoelectrics, thermal barrier coatings, nuclear materials, and radiative heat transfer.

Measurement of surface phonon dispersion relations for LiF, NaF, and KCl through energy-analysed inelastic scattering of a helium atomic beam

International Nuclear Information System (INIS)

Doak, R.B.

1981-01-01

A crystal surface terminates abruptly one dimension of lattice periodicity, constituting a lattice defect with concomitant localized modes of vibration, termed surface phonons. Such surface phonons have previously been investigated in the long wavelength, non-dispersive regime. The present work reports the first observation of surface phonons in the short wavelength, dispersive range. The data allow for the first time a surface phonon dispersion curve to be plotted completely from origin to edge of the surface Brillouin zone. Measurements were made of phonons along the (anti GAMMA anti M) and (anti GAMMA anti X) azimuths of the LiF(001) surface and along the azimuth of NaF(001) and KC1(001) surfaces. The results are in substantial agreement with theoretical predictions, although for LiF the measured Rayleigh dispersion curve at M lies appreciably below the theoretical value, possibly reflecting the effects of surface relaxation. (orig.)

Polar Mixing Optical Phonon Spectra in Wurtzite GaN Cylindrical Quantum Dots: Quantum Size and Dielectric Effects

International Nuclear Information System (INIS)

Zhang Li; Liao Jianshang

2010-01-01

The interface-optical-propagating (IO-PR) mixing phonon modes of a quasi-zero-dimensional (QoD) wurtzite cylindrical quantum dot (QD) structure are derived and studied by employing the macroscopic dielectric continuum model. The analytical phonon states of IO-PR mixing modes are given. It is found that there are two types of IO-PR mixing phonon modes, i.e. ρ-IO/z-PR mixing modes and the z-IO/ρ-PR mixing modes existing in QoD wurtzite QDs. And each IO-PR mixing modes also have symmetrical and antisymmetrical forms. Via a standard procedure of field quantization, the Froehlich Hamiltonians of electron-(IO-PR) mixing phonons interaction are obtained. Numerical calculations on a wurtzite GaN cylindrical QD are performed. The results reveal that both the radial-direction size and the axial-direction size as well as the dielectric matrix have great influence on the dispersive frequencies of the IO-PR mixing phonon modes. The limiting features of dispersive curves of these phonon modes are discussed in depth. The phonon modes 'reducing' behavior of wurtzite quantum confined systems has been observed obviously in the structures. Moreover, the degenerating behaviors of the IO-PR mixing phonon modes in wurtzite QoD QDs to the IO modes and PR modes in wurtzite Q2D QW and Q1D QWR systems are analyzed deeply from both of the viewpoints of physics and mathematics. (interdisciplinary physics and related areas of science and technology)

Au{sup 3+} ion implantation on FTO coated glasses: Effect on structural, electrical, optical and phonon properties

Energy Technology Data Exchange (ETDEWEB)

Sahu, Bindu; Dey, Ranajit; Bajpai, P.K., E-mail: bajpai.pk1@gmail.com

2017-06-01

Highlights: • Effects of 11.00 MeV Au{sup 3+} ions implanted in FTO coated (thickness ≈300 nm) silicate glasses at varying fluence. • Metal clustering near the surface and subsurface region below glass-FTO interface changes electrical and optical properties significantly. • Ion implantation does not affect the crystalline structure of the coated films; however, the tetragonal distortion increases with increasing ion fluence. • Significant surface reconstruction takes place with ion beam fluence; The average roughness also decreases with increasing fluence. • The sheet resistivity increases with increasing fluence. • Raman analysis also corroborates the re-crystallization process inducing due to ion implantation. • Optical properties of the implanted surfaces changes significantly. - Abstract: Effects of 11.00 MeV Au{sup 3+} ions implanted in FTO coated (thickness ≈300 nm) silicate glasses on structural, electrical optical and phonon behavior have been explored. It has been observed that metal clustering near the surface and sub-surface region below glass-FTO interface changes electrical and optical properties significantly. Ion implantation does not affect the crystalline structure of the coated films; however, the unit cell volume decreases with increase in fluence and the tetragonal distortion (c/a ratio) also decreases systematically in the implanted samples. The sheet resistivity of the films increases from 11 × 10{sup −5} ohm-cm (in pristine) to 7.5 × 10{sup −4} ohm-cm for highest ion beam fluence ≈10{sup 15} ions/cm{sup 2}. The optical absorption decreases with increasing fluence whereas, the optical transmittance as well as reflectance increases with increasing fluence. The Raman spectra are observed at ∼530 cm{sup −1} and ∼1103 cm{sup −1} in pristine sample. The broad band at 530 cm{sup −1} shifts towards higher wave number in the irradiated samples. This may be correlated with increased disorder and strain relaxation in

Spin waves in terbium. II. Magnon-phonon interaction

International Nuclear Information System (INIS)

Jensen, J.; Houmann, J.G.

1975-01-01

The selection rules for the linear couplings between magnons and phonons propagating in the c direction of a simple basal-plane hcp ferromagnet are determined by general symmetry considerations. The acoustic-optical magnon-phonon interactions observed in the heavy-rare-earth metals have been explained by Liu as originating from the mixing of the spin states of the conduction electrons due to the spin-orbit coupling. We find that this coupling mechanism introduces interactions which violate the selection rules for a simple ferromagnet. The interactions between the magnons and phonons propagating in the c direction of Tb have been studied experimentally by means of inelastic neutron scatttering. The magnons are coupled to both the acoustic- and optical-transverse phonons. By studying the behavior of the acoustic-optical coupling, we conclude that it is a spin-mixed-induced coupling as proposed by Liu. The coupled magnon--transverse-phonon system for the c direction of Tb is analyzed in detail, and the strengths of the couplings are deduced as a function of wave vector by combining the experimental studies with the theory

Phonon dispersion on Ag (100) surface: A modified analytic embedded atom method study

International Nuclear Information System (INIS)

Zhang Xiao-Jun; Chen Chang-Le

2016-01-01

Within the harmonic approximation, the analytic expression of the dynamical matrix is derived based on the modified analytic embedded atom method (MAEAM) and the dynamics theory of surface lattice. The surface phonon dispersions along three major symmetry directions, and XM-bar are calculated for the clean Ag (100) surface by using our derived formulas. We then discuss the polarization and localization of surface modes at points X-bar and M-bar by plotting the squared polarization vectors as a function of the layer index. The phonon frequencies of the surface modes calculated by MAEAM are compared with the available experimental and other theoretical data. It is found that the present results are generally in agreement with the referenced experimental or theoretical results, with a maximum deviation of 10.4%. The agreement shows that the modified analytic embedded atom method is a reasonable many-body potential model to quickly describe the surface lattice vibration. It also lays a significant foundation for studying the surface lattice vibration in other metals. (paper)

On-chip photonic-phononic emitter-receiver apparatus

Science.gov (United States)

Cox, Jonathan Albert; Jarecki, Jr., Robert L.; Rakich, Peter Thomas; Wang, Zheng; Shin, Heedeuk; Siddiqui, Aleem; Starbuck, Andrew Lea

2017-07-04

A radio-frequency photonic devices employs photon-phonon coupling for information transfer. The device includes a membrane in which a two-dimensionally periodic phononic crystal (PnC) structure is patterned. The device also includes at least a first optical waveguide embedded in the membrane. At least a first line-defect region interrupts the PnC structure. The first optical waveguide is embedded within the line-defect region.

Photon-phonon-enhanced infrared rectification in a two-dimensional nanoantenna-coupled tunnel diode

International Nuclear Information System (INIS)

Kadlec, Emil A.; Jarecki, Robert L.; Starbuck, Andrew; Peters, David W.; Davids, Paul S.

2016-01-01

The interplay of strong infrared photon-phonon coupling with electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast photon-assisted tunneling in metal-oxide-semiconductor (MOS) structures. Infrared active optical phonon modes in polar oxides lead to strong dispersion and enhanced electric fields at material interfaces. We find that the infrared dispersion of SiO_2 near a longitudinal optical phonon mode can effectively impedance match a photonic surface mode into a nanoscale tunnel gap that results in large transverse-field confinement. An integrated 2D nanoantenna structure on a distributed large-area MOS tunnel-diode rectifier is designed and built to resonantly excite infrared surface modes and is shown to efficiently channel infrared radiation into nanometer-scale gaps in these MOS devices. This enhanced-gap transverse-electric field is converted to a rectified tunneling displacement current resulting in a dc photocurrent. We examine the angular and polarization-dependent spectral photocurrent response of these 2D nanoantenna-coupled tunnel diodes in the photon-enhanced tunneling spectral region. Lastly, our 2D nanoantenna-coupled infrared tunnel-diode rectifier promises to impact large-area thermal energy harvesting and infrared direct detectors.

Mapping momentum-dependent electron-phonon coupling and nonequilibrium phonon dynamics with ultrafast electron diffuse scattering

Science.gov (United States)

Stern, Mark J.; René de Cotret, Laurent P.; Otto, Martin R.; Chatelain, Robert P.; Boisvert, Jean-Philippe; Sutton, Mark; Siwick, Bradley J.

2018-04-01

Despite their fundamental role in determining material properties, detailed momentum-dependent information on the strength of electron-phonon and phonon-phonon coupling (EPC and PPC, respectively) across the entire Brillouin zone has remained elusive. Here we demonstrate that ultrafast electron diffuse scattering (UEDS) directly provides such information. By exploiting symmetry-based selection rules and time resolution, scattering from different phonon branches can be distinguished even without energy resolution. Using graphite as a model system, we show that UEDS patterns map the relative EPC and PPC strength through their profound sensitivity to photoinduced changes in phonon populations. We measure strong EPC to the K -point TO phonon of A1' symmetry (K -A1' ) and along the entire TO branch between Γ -K , not only to the Γ -E2 g phonon. We also determine that the subsequent phonon relaxation of these strongly coupled optical phonons involve three stages: decay via several identifiable channels to TA and LA phonons (1 -2 ps), intraband thermalization of the non-equilibrium TA/LA phonon populations (30 -40 ps) and interband relaxation of the TA/LA modes (115 ps). Combining UEDS with ultrafast angle-resolved photoelectron spectroscopy will yield a complete picture of the dynamics within and between electron and phonon subsystems, helping to unravel complex phases in which the intertwined nature of these systems has a strong influence on emergent properties.

Electron-phonon coupling from finite differences

Science.gov (United States)

Monserrat, Bartomeu

2018-02-01

The interaction between electrons and phonons underlies multiple phenomena in physics, chemistry, and materials science. Examples include superconductivity, electronic transport, and the temperature dependence of optical spectra. A first-principles description of electron-phonon coupling enables the study of the above phenomena with accuracy and material specificity, which can be used to understand experiments and to predict novel effects and functionality. In this topical review, we describe the first-principles calculation of electron-phonon coupling from finite differences. The finite differences approach provides several advantages compared to alternative methods, in particular (i) any underlying electronic structure method can be used, and (ii) terms beyond the lowest order in the electron-phonon interaction can be readily incorporated. But these advantages are associated with a large computational cost that has until recently prevented the widespread adoption of this method. We describe some recent advances, including nondiagonal supercells and thermal lines, that resolve these difficulties, and make the calculation of electron-phonon coupling from finite differences a powerful tool. We review multiple applications of the calculation of electron-phonon coupling from finite differences, including the temperature dependence of optical spectra, superconductivity, charge transport, and the role of defects in semiconductors. These examples illustrate the advantages of finite differences, with cases where semilocal density functional theory is not appropriate for the calculation of electron-phonon coupling and many-body methods such as the GW approximation are required, as well as examples in which higher-order terms in the electron-phonon interaction are essential for an accurate description of the relevant phenomena. We expect that the finite difference approach will play a central role in future studies of the electron-phonon interaction.

Ultrafast electron, lattice and spin dynamics on rare earth metal surfaces. Investigated with linear and nonlinear optical techniques

Energy Technology Data Exchange (ETDEWEB)

Radu, I.E.

2006-03-15

This thesis presents the femtosecond laser-induced electron, lattice and spin dynamics on two representative rare-earth systems: The ferromagnetic gadolinium Gd(0001) and the paramagnetic yttrium Y(0001) metals. The employed investigation tools are the time-resolved linear reflectivity and second-harmonic generation, which provide complementary information about the bulk and surface/interface dynamics, respectively. The femtosecond laser excitation of the exchange-split surface state of Gd(0001) triggers simultaneously the coherent vibrational dynamics of the lattice and spin subsystems in the surface region at a frequency of 3 THz. The coherent optical phonon corresponds to the vibration of the topmost atomic layer against the underlying bulk along the normal direction to the surface. The coupling mechanism between phonons and magnons is attributed to the modulation of the exchange interaction J between neighbour atoms due to the coherent lattice vibration. This leads to an oscillatory motion of the magnetic moments having the same frequency as the lattice vibration. Thus these results reveal a new type of phonon-magnon coupling mediated by the modulation of the exchange interaction and not by the conventional spin-orbit interaction. Moreover, we show that coherent spin dynamics in the THz frequency domain is achievable, which is at least one order of magnitude faster than previously reported. The laser-induced (de)magnetization dynamics of the ferromagnetic Gd(0001) thin films have been studied. Upon photo-excitation, the nonlinear magneto-optics measurements performed in this work show a sudden drop in the spin polarization of the surface state by more than 50% in a <100 fs time interval. Under comparable experimental conditions, the time-resolved photoemission studies reveal a constant exchange splitting of the surface state. The ultrafast decrease of spin polarization can be explained by the quasi-elastic spin-flip scattering of the hot electrons among spin

Proposal for an optomechanical traveling wave phonon-photon translator

Energy Technology Data Exchange (ETDEWEB)

Safavi-Naeini, Amir H; Painter, Oskar, E-mail: safavi@caltech.edu, E-mail: opainter@caltech.edu [Thomas J Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125 (United States)

2011-01-15

In this paper, we describe a general optomechanical system for converting photons to phonons in an efficient and reversible manner. We analyze classically and quantum mechanically the conversion process and proceed to a more concrete description of a phonon-photon translator (PPT) formed from coupled photonic and phononic crystal planar circuits. The application of the PPT to RF-microwave photonics and circuit QED, including proposals utilizing this system for optical wavelength conversion, long-lived quantum memory and state transfer from optical to superconducting qubits, is considered.

Demonstration of suppressed phonon tunneling losses in phononic bandgap shielded membrane resonators for high-Q optomechanics.

Science.gov (United States)

Tsaturyan, Yeghishe; Barg, Andreas; Simonsen, Anders; Villanueva, Luis Guillermo; Schmid, Silvan; Schliesser, Albert; Polzik, Eugene S

2014-03-24

Dielectric membranes with exceptional mechanical and optical properties present one of the most promising platforms in quantum opto-mechanics. The performance of stressed silicon nitride nanomembranes as mechanical resonators notoriously depends on how their frame is clamped to the sample mount, which in practice usually necessitates delicate, and difficult-to-reproduce mounting solutions. Here, we demonstrate that a phononic bandgap shield integrated in the membrane's silicon frame eliminates this dependence, by suppressing dissipation through phonon tunneling. We dry-etch the membrane's frame so that it assumes the form of a cm-sized bridge featuring a 1-dimensional periodic pattern, whose phononic density of states is tailored to exhibit one, or several, full band gaps around the membrane's high-Q modes in the MHz-range. We quantify the effectiveness of this phononic bandgap shield by optical interferometry measuring both the suppressed transmission of vibrations, as well as the influence of frame clamping conditions on the membrane modes. We find suppressions up to 40 dB and, for three different realized phononic structures, consistently observe significant suppression of the dependence of the membrane's modes on sample clamping-if the mode's frequency lies in the bandgap. As a result, we achieve membrane mode quality factors of 5 × 10(6) with samples that are tightly bolted to the 8 K-cold finger of a cryostat. Q × f -products of 6 × 10(12) Hz at 300 K and 14 × 10(12) Hz at 8 K are observed, satisfying one of the main requirements for optical cooling of mechanical vibrations to their quantum ground-state.

Temperature dependence of phonons in pyrolitic graphite

International Nuclear Information System (INIS)

Brockhouse, B.N.; Shirane, G.

1977-01-01

Dispersion curves for longitudinal and transverse phonons propagating along and near the c-axis in pyrolitic graphite at temperatures between 4 0 K and 1500 0 C have been measured by neutron spectroscopy. The observed frequencies decrease markedly with increasing temperature (except for the transverse optical ''rippling'' modes in the hexagonal planes). The neutron groups show interesting asymmetrical broadening ascribed to interference between one phonon and many phonon processes

First-principles study on the electronic structure, phonons and optical properties of LaB_6 under high-pressure

International Nuclear Information System (INIS)

Chao, Luomeng; Bao, Lihong; Wei, Wei; O, Tegus; Zhang, Zhidong

2016-01-01

The electronic structure, phonons and optical properties of LaB_6 compound under different pressure have been studied by first-principles calculation. The electronic structure calculation shows that the d band along the M-Γ direction of the Brillouin zone moves up with increasing pressure and the band minimum is above the Fermi level at 45 GPa. The pressure-induced charge transfer from La to B atoms is reflected in the upshift of d band along the M-Γ direction with pressure. The calculated phonon dispersion curve at zero pressure is in good agreement with the experimental results. However, the phonon dispersion under high pressure does not show any information about the phase transition at 10 GPa, which was reported previously. The acoustic and optical phonon modes harden all the way with increasing pressure. In addition, the dielectric function is in accordance with the Drude model in the pressure range of 0 GPa–35 GPa and follows the Lorentz model at 45 GPa. The LaB_6 compound exhibits better visible light transmittance performance with the increasing pressure in the range of 0 GPa–35 GPa and visible light transmittance peak would be shifted towards ultraviolet region. - Highlights: • Physical properties of LaB_6 under high pressure have been theoretically studied. • Predict an electronic topological transition occurs at 45 GPa for LaB_6. • Predict a pressure-induced charge transfer from La to B atoms. • The phonon modes at Γ point show an increasing trend with increasing pressure. • The LaB_6 exhibits better heat-shielding performance with the increasing pressure.

Copper plasmonics and catalysis: role of electron-phonon interactions in dephasing localized surface plasmons

Science.gov (United States)

Sun, Qi-C.; Ding, Yuchen; Goodman, Samuel M.; H. Funke, Hans; Nagpal, Prashant

2014-10-01

Copper metal can provide an important alternative for the development of efficient, low-cost and low-loss plasmonic nanoparticles, and selective nanocatalysts. However, poor chemical stability and lack of insight into photophysics and plasmon decay mechanisms has impeded study. Here, we use smooth conformal ALD coating on copper nanoparticles to prevent surface oxidation, and study dephasing time for localized surface plasmons on different sized copper nanoparticles. Using dephasing time as a figure of merit, we elucidate the role of electron-electron, electron-phonon, impurity, surface and grain boundary scattering on the decay of localized surface plasmon waves. Using our quantitative analysis and different temperature dependent measurements, we show that electron-phonon interactions dominate over other scattering mechanisms in dephasing plasmon waves. While interband transitions in copper metal contributes substantially to plasmon losses, tuning surface plasmon modes to infrared frequencies leads to a five-fold enhancement in the quality factor. These findings demonstrate that conformal ALD coatings can improve the chemical stability for copper nanoparticles, even at high temperatures (>300 °C) in ambient atmosphere, and nanoscaled copper is a good alternative material for many potential applications in nanophotonics, plasmonics, catalysis and nanoscale electronics.Copper metal can provide an important alternative for the development of efficient, low-cost and low-loss plasmonic nanoparticles, and selective nanocatalysts. However, poor chemical stability and lack of insight into photophysics and plasmon decay mechanisms has impeded study. Here, we use smooth conformal ALD coating on copper nanoparticles to prevent surface oxidation, and study dephasing time for localized surface plasmons on different sized copper nanoparticles. Using dephasing time as a figure of merit, we elucidate the role of electron-electron, electron-phonon, impurity, surface and grain

Temperature dependence of Brillouin light scattering spectra of acoustic phonons in silicon

International Nuclear Information System (INIS)

Olsson, Kevin S.; Klimovich, Nikita; An, Kyongmo; Sullivan, Sean; Weathers, Annie; Shi, Li; Li, Xiaoqin

2015-01-01

Electrons, optical phonons, and acoustic phonons are often driven out of local equilibrium in electronic devices or during laser-material interaction processes. The need for a better understanding of such non-equilibrium transport processes has motivated the development of Raman spectroscopy as a local temperature sensor of optical phonons and intermediate frequency acoustic phonons, whereas Brillouin light scattering (BLS) has recently been explored as a temperature sensor of low-frequency acoustic phonons. Here, we report the measured BLS spectra of silicon at different temperatures. The origins of the observed temperature dependence of the BLS peak position, linewidth, and intensity are examined in order to evaluate their potential use as temperature sensors for acoustic phonons

Phonon excitations in multicomponent amorphous solids

International Nuclear Information System (INIS)

Vakarchuk, I.A.; Migal', V.M.; Tkachuk, V.M.

1988-01-01

The method of two-time temperature-dependent Green's functions is used to investigate phonon excitations in multicomponent amorphous solids. The equation obtained for the energy spectrum of the phonon excitations takes into account the damping associated with scattering of phonons by structure fluctuations. The quasicrystal approximation is considered, and as an example explicit expressions are obtained for the case of a two-component amorphous solid for the frequencies of the acoustical and optical modes and for the longitudinal and transverse velocities of sound. The damping is investigated

Electron-phonon interactions and the phonon anomaly in β-phase NiTi

International Nuclear Information System (INIS)

Zhao, G.L.; Harmon, B.N.

1993-01-01

The electronic structure of β-phase NiTi has been calculated using a first-principles linear-combination-of-atomic-orbitals method. The resulting band structure was fitted with a nonorthogonal tight-binding Hamiltonian from which electron-phonon matrix elements were evaluated. The soft phonon near Q 0 =(2/3, 2) / (3 ,0)π/a, which is responsible for the premartensitic phase transition in β-phase NiTi, is found to arise from the strong electron-phonon coupling of nested electronic states on the Fermi surface. Thermal vibrations and changes in electronic occupation cause a smearing of the nested features, which in turn cause a hardening of the phonon anomaly

Understanding photon sideband statistics and correlation for determining phonon coherence

Science.gov (United States)

Ding, Ding; Yin, Xiaobo; Li, Baowen

2018-01-01

Generating and detecting coherent high-frequency heat-carrying phonons have been topics of great interest in recent years. Although there have been successful attempts in generating and observing coherent phonons, rigorous techniques to characterize and detect phonon coherence in a crystalline material have been lagging compared to what has been achieved for photons. One main challenge is a lack of detailed understanding of how detection signals for phonons can be related to coherence. The quantum theory of photoelectric detection has greatly advanced the ability to characterize photon coherence in the past century, and a similar theory for phonon detection is necessary. Here, we reexamine the optical sideband fluorescence technique that has been used to detect high-frequency phonons in materials with optically active defects. We propose a quantum theory of phonon detection using the sideband technique and found that there are distinct differences in sideband counting statistics between thermal and coherent phonons. We further propose a second-order correlation function unique to sideband signals that allows for a rigorous distinction between thermal and coherent phonons. Our theory is relevant to a correlation measurement with nontrivial response functions at the quantum level and can potentially bridge the gap of experimentally determining phonon coherence to be on par with that of photons.

The studies of surface properties of 1.5 MeV Si-implanted silicon by multiphonon Raman spectrum

International Nuclear Information System (INIS)

Huang, X.

1995-01-01

The surface layer of crystalline silicon implanted by 1.5 MeV Si ions with doses ranging from 1 x 10 11 to 1 x 10 15 Si + cm -2 has been studied by two-phonon Raman spectra in both the acoustical overtone region and optical overtone region. Two-phonon Raman line intensities and shifts have been used to investigate the properties in the skin layer. The experimental two-phonon Raman spectra showed a decrease in intensity for both optical and acoustical two-phonon Raman peaks and also showed shifts by different amounts in different directions depending on the particular phonons. The stress values obtained by two-phonon Raman line shifts are compared with those obtained previously by one-phonon Raman shifts. The comparison shows that the surface defects make no contribution to two-phonon Raman line shifts. The two-phonon Raman line shifts show that the surface stress increases as a function of implantation doses. (author)

Quasiparticle properties of a coupled quantum-wire electron-phonon system

DEFF Research Database (Denmark)

Hwang, E. H.; Hu, Ben Yu-Kuang; Sarma, S. Das

1996-01-01

We study leading-order many-body effects of longitudinal-optical phonons on electronic properties of one-dimensional quantum-wire systems. We calculate the quasiparticle properties of a weakly polar one-dimensional electron gas in the presence of both electron-phonon and electron-electron interac......We study leading-order many-body effects of longitudinal-optical phonons on electronic properties of one-dimensional quantum-wire systems. We calculate the quasiparticle properties of a weakly polar one-dimensional electron gas in the presence of both electron-phonon and electron......-electron interactions, The leading-order dynamical screening approximation (GW approximation) is used to obtain the electron self-energy, the quasiparticle spectral function, and the quasiparticle damping rate in our calculation by treating electrons and phonons on an equal footing. Our theory includes effects (within...... theoretical results for quasiparticle properties....

Strong Carrier–Phonon Coupling in Lead Halide Perovskite Nanocrystals

Science.gov (United States)

2017-01-01

We highlight the importance of carrier–phonon coupling in inorganic lead halide perovskite nanocrystals. The low-temperature photoluminescence (PL) spectrum of CsPbBr3 has been investigated under a nonresonant and a nonstandard, quasi-resonant excitation scheme, and phonon replicas of the main PL band have been identified as due to the Fröhlich interaction. The energy of longitudinal optical (LO) phonons has been determined from the separation of the zero phonon band and phonon replicas. We reason that the observed LO phonon coupling can only be related to an orthorhombically distorted crystal structure of the perovskite nanocrystals. Additionally, the strength of carrier–phonon coupling has been characterized using the ratio between the intensities of the first phonon replica and the zero-phonon band. PL emission from localized versus delocalized carriers has been identified as the source of the observed discrepancies between the LO phonon energy and phonon coupling strength under quasi-resonant and nonresonant excitation conditions, respectively. PMID:29019652

Freeform Phononic Waveguides

Directory of Open Access Journals (Sweden)

Georgios Gkantzounis

2017-11-01

Full Text Available We employ a recently introduced class of artificial structurally-disordered phononic structures that exhibit large and robust elastic frequency band gaps for efficient phonon guiding. Phononic crystals are periodic structures that prohibit the propagation of elastic waves through destructive interference and exhibit large band gaps and ballistic propagation of elastic waves in the permitted frequency ranges. In contrast, random-structured materials do not exhibit band gaps and favour localization or diffusive propagation. Here, we use structures with correlated disorder constructed from the so-called stealthy hyperuniform disordered point patterns, which can smoothly vary from completely random to periodic (full order by adjusting a single parameter. Such amorphous-like structures exhibit large band gaps (comparable to the periodic ones, both ballistic-like and diffusive propagation of elastic waves, and a large number of localized modes near the band edges. The presence of large elastic band gaps allows the creation of waveguides in hyperuniform materials, and we analyse various waveguide architectures displaying nearly 100% transmission in the GHz regime. Such phononic-circuit architectures are expected to have a direct impact on integrated micro-electro-mechanical filters and modulators for wireless communications and acousto-optical sensing applications.

Multiple interruption of optically generated acoustic phonons in ruby

International Nuclear Information System (INIS)

Dijkhuis, J.I.

1979-01-01

This thesis clarifies the rate-determining processes which tend to equilibrate the bottlenecked 29 cm -1 phonons with the temperature bath in stationary experiments. In addition, the direct relaxation between the Zeeman components of E is measured, revealing at high pumping, both continuous and time-resolved, a strong phonon bottleneck. (Auth.)

Renormalisation of Nonequilibrium Phonons Under Strong Perturbative Influences.

Science.gov (United States)

Mehta, Sushrut Madhukar

Effects of strong perturbative influences, namely the presence of a narrow distribution of acoustic phonons, and the presence of an electron plasma, on the dynamics of nonequilibrium, near zone center, longitudinal optical phonons in GaP have been investigated in two separate experiments. The study of the effects of the interaction between the LO phonons and a heavily populated, narrow distribution of acoustic phonons lead to the observation of a new optically driven nonequilibrium phonon state. Time Resolved Coherent Antistokes Raman Scattering (TR-CARS), with picosecond resolution, was used to investigate the new mode. In order to achieve high occupation numbers in the acoustic branch, the picosecond laser pulses used were amplified up to 1.0 GW/cm^2 peak power per laser beam. An important characteristic property of the new state which differentiates it from the well known LO phonon state is the fact that rather than having the single decay rate observed under thermal equilibrium, the new state has two decay rates. Moreover, these two decay rates depend strongly on the distribution of the acoustic phonon occupation number. The coupling of the LO phonons with an electron plasma, on the other hand, was investigated by measurements of the shape of the Raman scattered line associated with the phonon-plasmon coupled mode. The plasma was generated by thermal excitation of carriers in doped samples. It was possible to study a large variety of plasma excitations by controlling the concentration of the dopant and the ambient temperature. A complete, self consistant model based on standard dielectric response theory is presented, and applied to the measurements of the phonon-plasmon coupled mode. It is possible to recover, via this model, the effective coupled mode damping rate, the plasma damping rate, and the plasma frequency as functions of ambient temperature, or the carrier concentration.

Elastic wave surfaces and phonon focussing for the A-15 compounds

International Nuclear Information System (INIS)

Viswanathan, K.S.

1981-01-01

It is shown that the section of the energy surface corresponding to the longitudinal mode by the principal xy-plane for the A-15 compounds will degenerate into four points at the corners of a square at very low temperatures in the cubic phase. When the quasi-shear mode propagating along the (110) direction becomes soft, simultaneously the longitudinal mode will exhibit unusually high phonon focussing. (author)

Electrical modulation and switching of transverse acoustic phonons

Science.gov (United States)

Jeong, H.; Jho, Y. D.; Rhim, S. H.; Yee, K. J.; Yoon, S. Y.; Shim, J. P.; Lee, D. S.; Ju, J. W.; Baek, J. H.; Stanton, C. J.

2016-07-01

We report on the electrical manipulation of coherent acoustic phonon waves in GaN-based nanoscale piezoelectric heterostructures which are strained both from the pseudomorphic growth at the interfaces as well as through external electric fields. In such structures, transverse symmetry within the c plane hinders both the generation and detection of the transverse acoustic (TA) modes, and usually only longitudinal acoustic phonons are generated by ultrafast displacive screening of potential gradients. We show that even for c -GaN, the combined application of lateral and vertical electric fields can not only switch on the normally forbidden TA mode, but they can also modulate the amplitudes and frequencies of both modes. By comparing the transient differential reflectivity spectra in structures with and without an asymmetric potential distribution, the role of the electrical controllability of phonons was demonstrated as changes to the propagation velocities, the optical birefringence, the electrically polarized TA waves, and the geometrically varying optical sensitivities of phonons.

Quantum Phonon Optics: Squeezing Quantum Noise in the Atomic Displacements.

Science.gov (United States)

Hu, X.; Nori, F.

1996-03-01

We have investigated(X. Hu and F. Nori, Physical Review B, in press; preprints.) coherent and squeezed quantum states of phonons. Squeezed states are interesting because they allow the possibility of modulating the quantum fluctuations of atomic displacements below the zero-point quantum noise level of phonon vacuum states. We have studiedfootnotemark[1] the possibility of squeezing quantum noise in the atomic displacement using a polariton-based approach and also a method based on the three-phonon anharmonic interaction. Our focus here is on the first approach. We have diagonalized the polariton Hamiltonian and calculated the corresponding expectation values and fluctuations of both the atomic displacement and the lattice amplitude operators (the later is the phonon analog of the electric field operator for photons). Our results shows that squeezing of quantum fluctuations in the atomic displacements can be achieved with appropriate initial states of both photon and phonon fields. The degree of squeezing is directly related to the crystal susceptibility, which is indicative of the interaction strength between the incident light and the crystal.

Controlling competing electronic orders via non-equilibrium acoustic phonons

Science.gov (United States)

Schuett, Michael; Orth, Peter; Levchenko, Alex; Fernandes, Rafael

The interplay between multiple electronic orders is a hallmark of strongly correlated systems displaying unconventional superconductivity. While doping, pressure, and magnetic field are the standard knobs employed to assess these different phases, ultrafast pump-and-probe techniques opened a new window to probe these systems. Recent examples include the ultrafast excitation of coherent optical phonons coupling to electronic states in cuprates and iron pnictides. In this work, we demonstrate theoretically that non-equilibrium acoustic phonons provide a promising framework to manipulate competing electronic phases and favor unconventional superconductivity over other states. In particular, we show that electrons coupled to out-of-equilibrium anisotropic acoustic phonons enter a steady state in which the effective electronic temperature varies around the Fermi surface. Such a momentum-dependent temperature can then be used to selectively heat electronic states that contribute primarily to density-wave instabilities, reducing their competition with superconductivity. We illustrate this phenomenon by computing the microscopic steady-state phase diagram of the iron pnictides, showing that superconductivity is enhanced with respect to the competing antiferromagnetic phase.

On-chip plasmonic cavity-enhanced spontaneous emission rate at the zero-phonon line

DEFF Research Database (Denmark)

Siampour, Hamidreza; Kumar, Shailesh; Bozhevolnyi, Sergey I.

Highly confined surface plasmon polariton (SPP) modes can be utilized to enhance light-matter interaction at the single emitter level of quantum optical systems [1-4]. Dielectric-loaded SPP waveguides (DLSPPWs) confine SPPs laterally with relatively low propagation loss, enabling to benefit both ...... and an up to 42-fold spontaneous emission rate enhancement at the zero-phonon line (a ∼7-fold resonance enhancement in addition to a ∼6-fold broadband enhancement) is achieved, revealing the potential of our approach for on-chip realization of quantum-optical networks....... from a large Purcell factor and from a large radiative efficiency (low quenching rates) [1, 2]. In this work, we present a DLSPPW-based Bragg cavity resonator to direct emission from a single diamond nitrogen vacancy (NV) center into the zero-phonon line (Fig. 1). A quality factor of ∼70 for the cavity...

Lifetime of the phonons in the PLT ceramic

Energy Technology Data Exchange (ETDEWEB)

Barba-Ortega, J., E-mail: jjbarba@unal.edu.co; Joya, M. R., E-mail: mrinconj@unal.edu.co [Departamento de Física, Universidad Nacional de Colombia, carrera 30 # 45-03, Bogotá 1149 (Colombia); Londoño, F. A., E-mail: flondono@fisica.udea.edu.co [Instituto de Física, Universidad de Antioquia, Calle 67 #53-108 Of.6-105, Medellin (Colombia)

2014-11-05

The lifetimes at higher temperatures on lanthanum-modified lead titanate (PLT) are mainly due to the anharmonic decay of optical phonons into low-energy phonons. The temperature-independent contributions from inherent crystal defects and from boundary scattering become comparable to the phonon scattering contribution at lower temperatures. The thermal interaction is large at higher temperatures which decreases the phonon mean free path, and so the decay lifetime decreases as the temperature of the system is increased. This leads to the increased line width at higher temperatures. We made an estimate of the lifetimes for different concentrations and temperatures in PLT.

Electron nonelastic scattering by confined and interface polar optical phonons in a modulation-doped AlGaAs/GaAs/AlGaAs quantum well

CERN Document Server

Pozela, K

2001-01-01

The calculations of electron scattering rates by polar optical (PO) phonons in an AlGaAs/GaAs/AlGaAs quantum well (QW) with a different width and doping level are performed. The electron-PO-phonon scattering mechanisms which are responsible for the alternate dependence of electron mobility on a QW width, as well as for the decrease of conductivity in the QW with increasing electron concentration are determined. It is shown that the degeneration of electron gas decreases the electron scattering rate by PO-phonon emission and increases the scattering rate by phonon absorption. The competition between the decrease of the intrasubband scattering and the increase of the intersubband scattering by PO-phonon absorption is responsible for the alternate changes of the mobility with a QW width

Electron-Mediated Phonon-Phonon Coupling Drives the Vibrational Relaxation of CO on Cu(100)

Science.gov (United States)

Novko, D.; Alducin, M.; Juaristi, J. I.

2018-04-01

We bring forth a consistent theory for the electron-mediated vibrational intermode coupling that clarifies the microscopic mechanism behind the vibrational relaxation of adsorbates on metal surfaces. Our analysis points out the inability of state-of-the-art nonadiabatic theories to quantitatively reproduce the experimental linewidth of the CO internal stretch mode on Cu(100) and it emphasizes the crucial role of the electron-mediated phonon-phonon coupling in this regard. The results demonstrate a strong electron-mediated coupling between the internal stretch and low-energy CO modes, but also a significant role of surface motion. Our nonadiabatic theory is also able to explain the temperature dependence of the internal stretch phonon linewidth, thus far considered a sign of the direct anharmonic coupling.

Optical and acoustic sensing using Fano-like resonances in dual phononic and photonic crystal plate

Energy Technology Data Exchange (ETDEWEB)

Amoudache, Samira [Institut d' Electronique, de Microélectronique et de Nanotechnologie, Université de Lille 1, 59655 Villeneuve d' Ascq (France); Laboratoire de Physique et Chimie Quantique, Université Mouloud Mammeri, B.P. 17 RP, 15000 Tizi-Ouzou (Algeria); Moiseyenko, Rayisa [Department of Physics, Technical University of Denmark, DTU Physics, Building 309, DK-2800 Kongens Lyngby (Denmark); Pennec, Yan, E-mail: yan.pennec@univ-lille1.fr; Rouhani, Bahram Djafari [Institut d' Electronique, de Microélectronique et de Nanotechnologie, Université de Lille 1, 59655 Villeneuve d' Ascq (France); Khater, Antoine [Institut des Molécules et Matériaux du Mans (IMMM), UMR CNRS 6283, l' UNAM, Université du Maine, 72085 Le Mans (France); Lucklum, Ralf [Institute of Micro and Sensor Systems (IMOS), Otto-von-Guericke-University, P.O. Box 4120, D-39016 Magdeburg (Germany); Tigrine, Rachid [Laboratoire de Physique et Chimie Quantique, Université Mouloud Mammeri, B.P. 17 RP, 15000 Tizi-Ouzou (Algeria)

2016-03-21

We perform a theoretical study based on the transmissions of optical and acoustic waves normally impinging to a periodic perforated silicon plate when the embedded medium is a liquid and show the existence of Fano-like resonances in both cases. The signature of the resonances appears as well-defined asymmetric peaks in the phononic and photonic transmission spectra. We show that the origin of the Fano-like resonances is different with respect to the nature of the wave. In photonic, the origin comes from guided modes in the photonic plate while in phononic we show that it comes from the excitation of standing waves confined inside the cavity coming from the deformation of the water/silicon edges of the cylindrical inclusion. We finally use these features for sensing and show ultra-sensitivity to the light and sound velocities for different concentrations of analytes.

Large-area uniform periodic microstructures on fused silica induced by surface phonon polaritons and incident laser

Science.gov (United States)

Zhang, Chuanchao; Liao, Wei; Zhang, Lijuan; Jiang, Xiaolong; Chen, Jing; Wang, Haijun; Luan, Xiaoyu; Yuan, Xiaodong

2018-06-01

A simple and convenient means to self-organize large-area uniform periodic microstructures on fused silica by using multiple raster scans of microsecond CO2 laser pulses with beam spot overlapping at normal incidence is presented, which is based on laser-induced periodic surface structures (LIPSS) attributed to the interference between surface phonon polaritons and incident CO2 laser. The evolution of fused silica surface morphologies with increasing raster scans indicates that the period of microstructures changed from 10.6 μm to 9 μm and the profiles of microstructures changed from a sinusoidal curve to a half-sinusoidal shape. Numerical simulation results suggest that the formation of the half-sinusoidal profile is due to the exponential relationship between evaporation rate and surface temperature inducing by the intensive interference between surface phonon polaritons and incident laser. The fabricated uniform periodic microstructures show excellent structural color effect in both forward-diffraction and back-diffraction.

Optical properties of Eu{sup 3+}-doped antimony-oxide-based low phonon disordered matrices

Energy Technology Data Exchange (ETDEWEB)

Som, Tirtha; Karmakar, Basudeb, E-mail: basudebk@cgcri.res.i [Glass Technology Laboratory, Glass Division, Central Glass and Ceramic Research Institute (Council of Scientific and Industrial Research), 196 Raja S C Mullick Road, Kolkata 700032 (India)

2010-01-27

A new series of monolithic Eu{sub 2}O{sub 3}-doped high antimony oxide (40-80 mol%) content disordered matrices (glasses) of low phonon energy (about 600 cm{sup -1}) in the K{sub 2}O-B{sub 2}O{sub 3}-Sb{sub 2}O{sub 3} (KBS) system was prepared by the melt-quench technique. Infrared reflection spectroscopy was used to establish the low phonon energy of the glasses. Amorphicity and devitrification of the glasses were confirmed by x-ray diffraction analysis. UV-vis absorption spectra of Eu{sup 3+} have been measured and the band positions have been justified with quantitative calculation of the nephelauxetic parameter and covalent bonding characteristics of the host. These Eu{sub 2}O{sub 3}-doped glasses upon excitation at 393 nm radiation exhibit six emission bands in the range 500-750 nm due to their low phonon energy. Of these, the magnetic dipole {sup 5}D{sub 0} -> {sup 7}F{sub 1} transition shows small Stark splitting while the electric dipole {sup 5}D{sub 0}->{sup 7}F{sub 2} transition undergoes remarkable Stark splitting into two components. They have been explained by the crystal field effect. The Judd-Ofelt parameters, {Omega}{sub t{sub =2,4,6}}, were also evaluated and the change of {Omega}{sub t} with the glass composition was correlated with the asymmetric effect at Eu{sup 3+} ion sites and the fundamental properties like covalent character and optical basicity. We are the first to report the spectroscopic properties of the Eu{sup 3+} ion in KBS low phonon antimony glasses.

Theoretical study on photon-phonon coupling at (001)-(2 x 1) surfaces of Ge and {alpha}-Sn

Energy Technology Data Exchange (ETDEWEB)

Perez-Sanchez, F.L. [Escuela de Ciencias, Universidad Autonoma ' ' Benito Juarez' ' de Oaxaca, Av. Universidad S/N, Ex-Hacienda de Cinco Senores, Ciudad Universitaria, Oaxaca de Juarez, Oax., 68120 (Mexico); Perez-Rodriguez, F. [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, Apdo. Post. J-48, Puebla, Pue. 72570 (Mexico)

2011-06-15

We present a study of the far-infrared reflectance anisotropy spectra for (001) surfaces of Ge and {alpha}-Sn in the (2 x 1) asymmetric dimer geometry, which exhibit a resonance structure associated with the excitation of surface phonon modes. We have employed a theoretical formalism, based on the adiabatic bond-charge model (ABCM), for computing the far-infrared reflectance anisotropy spectra. In comparison with previous theoretical results for silicon and diamond surfaces, the resonance structure in the reflectance anisotropy spectrum for Ge(001)-(2 x 1) turns out to be similar to that observed in the spectrum for the Si(001)-(2 x 1) surface, whereas the spectrum for {alpha}-Sn(001)-(2 x 1) surface is noticeably different from the others. We have established a trend of far-infrared reflectance anisotropy spectra for IV(001) surfaces: the weaker dimer strength, the stronger resonances of low-frequency surface phonons. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Electron-phonon contribution to the phonon and excited electron (hole) linewidths in bulk Pd

International Nuclear Information System (INIS)

Sklyadneva, I Yu; Leonardo, A; Echenique, P M; Eremeev, S V; Chulkov, E V

2006-01-01

We present an ab initio study of the electron-phonon (e-ph) coupling and its contribution to the phonon linewidths and to the lifetime broadening of excited electron and hole states in bulk Pd. The calculations, based on density-functional theory, were carried out using a linear-response approach in the plane-wave pseudopotential representation. The obtained results for the Eliashberg spectral function α 2 F(ω), e-ph coupling constant λ, and the contribution to the lifetime broadening, Γ e-ph , show strong dependence on both the energy and momentum of an electron (hole) state. The calculation of phonon linewidths gives, in agreement with experimental observations, an anomalously large broadening for the transverse phonon mode T 1 in the Σ direction. In addition, this mode is found to contribute most strongly to the electron-phonon scattering processes on the Fermi surface

Phonon-mediated decay of an atom in a surface-induced potential

International Nuclear Information System (INIS)

Kien, Fam Le; Hakuta, K.; Dutta Gupta, S.

2007-01-01

We study phonon-mediated transitions between translational levels of an atom in a surface-induced potential. We present a general master equation governing the dynamics of the translational states of the atom. In the framework of the Debye model, we derive compact expressions for the rates for both upward and downward transitions. Numerical calculations for the transition rates are performed for a deep silica-induced potential allowing for a large number of bound levels as well as free states of a cesium atom. The total absorption rate is shown to be determined mainly by the bound-to-bound transitions for deep bound levels and by bound-to-free transitions for shallow bound levels. Moreover, the phonon emission and absorption processes can be orders of magnitude larger for deep bound levels as compared to the shallow bound ones. We also study various types of transitions from free states. We show that, for thermal atomic cesium with a temperature in the range from 100 μK to 400 μK in the vicinity of a silica surface with a temperature of 300 K, the adsorption (free-to-bound decay) rate is about two times larger than the heating (free-to-free upward decay) rate, while the cooling (free-to-free downward decay) rate is negligible

Optical and acoustic sensing using Fano-like resonances in dual phononic and photonic crystal plate

DEFF Research Database (Denmark)

Amoudache, Samira; Moiseyenko, Rayisa; Pennec, Yan

2016-01-01

We perform a theoretical study based on the transmissions of optical and acoustic waves normally impinging to a periodic perforated silicon plate when the embedded medium is a liquid and show the existence of Fano-like resonances in both cases. The signature of the resonances appears as well-defi...... of standing waves confined inside the cavity coming from the deformation of the water/silicon edges of the cylindrical inclusion. We finally use these features for sensing and show ultra-sensitivity to the light and sound velocities for different concentrations of analytes.......-defined asymmetric peaks in the phononic and photonic transmission spectra. We show that the origin of the Fano-like resonances is different with respect to the nature of the wave. In photonic, the origin comes from guided modes in the photonic plate while in phononic we show that it comes from the excitation...

Phonons and their dispersion in model ferroelastics Hg2Hal2

Science.gov (United States)

Roginskii, E. M.; Kvasov, A. A.; Markov, Yu. F.; Smirnov, M. B.

2012-05-01

Dispersion relations of the acoustic and optical phonon frequencies have been calculated and plotted, and the density of states of the phonon spectrum of Hg2Cl2 and Hg2Br2 crystals has been derived. The effect of hydrostatic pressure on the frequencies of acoustic and optical phonons and their dispersion has been theoretically analyzed. It has been found that an increase in the pressure leads to a strong softening of the slowest acoustic TA branch (the soft mode) at the X point of the Brillouin zone boundary, which is consistent with the phenomenological Landau theory and correlates with experiment.

Phonon spectra in SiO2 glasses

International Nuclear Information System (INIS)

Perez R, J.F.; Jimenez S, S.; Gonzalez H, J.; Vorobiev, Y.V.; Hernandez L, M.A.; Parga T, J.R.

1999-01-01

Phonon spectra in SiO 2 sol-gel made glasses annealed under different conditions are investigated using infrared absorption and Raman scattering. These data are compared with those obtained in commercial optical-quality quartz. All the materials exhibit the same phonon bands, the exact position and the intensity depend on the measuring technique and on the sample preparation method. The phonon spectra in this material are interpreted on the basis of a simple quasi-linear description of elastic waves in an O-Si-O chain. It is shown that the main features observed in the range 400-1400 cm -1 can be predicted using a quasi-linear chain model in which the band at 1070 cm -1 is assigned to the longitudinal optical waves in the O-Si-O chain with the smallest possible wavelength at the Brillouin zone boundary, the band located around 450 cm -1 is assigned to the transversal optical waves and the band at 800 cm -1 to the longitudinal acoustical waves with the same wavelength. The degree of structural disorder can be also deduced within the framework of the proposed model. (Author)

Localized surface phonon polariton resonances in polar gallium nitride

Energy Technology Data Exchange (ETDEWEB)

Feng, Kaijun, E-mail: kfeng@nd.edu; Islam, S. M.; Verma, Jai; Hoffman, Anthony J. [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Streyer, William; Wasserman, Daniel [Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801 (United States); Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14850 (United States)

2015-08-24

We demonstrate the excitation of localized surface phonon polaritons in an array of sub-diffraction pucks fabricated in an epitaxial layer of gallium nitride (GaN) on a silicon carbide (SiC) substrate. The array is characterized via polarization- and angle-dependent reflection spectroscopy in the mid-infrared, and coupling to several localized modes is observed in the GaN Reststrahlen band (13.4–18.0 μm). The same structure is simulated using finite element methods and the charge density of the modes are studied; transverse dipole modes are identified for the transverse electric and magnetic polarizations and a quadrupole mode is identified for the transverse magnetic polarization. The measured mid-infrared spectrum agrees well with numerically simulated spectra. This work could enable optoelectronic structures and devices that support surface modes at mid- and far-infrared wavelengths.

The hydrogen-bond network of water supports propagating optical phonon-like modes.

Science.gov (United States)

Elton, Daniel C; Fernández-Serra, Marivi

2016-01-04

The local structure of liquid water as a function of temperature is a source of intense research. This structure is intimately linked to the dynamics of water molecules, which can be measured using Raman and infrared spectroscopies. The assignment of spectral peaks depends on whether they are collective modes or single-molecule motions. Vibrational modes in liquids are usually considered to be associated to the motions of single molecules or small clusters. Using molecular dynamics simulations, here we find dispersive optical phonon-like modes in the librational and OH-stretching bands. We argue that on subpicosecond time scales these modes propagate through water's hydrogen-bond network over distances of up to 2 nm. In the long wavelength limit these optical modes exhibit longitudinal-transverse splitting, indicating the presence of coherent long-range dipole-dipole interactions, as in ice. Our results indicate the dynamics of liquid water have more similarities to ice than previously thought.

Optical excitation and electron relaxation dynamics at semiconductor surfaces: a combined approach of density functional and density matrix theory applied to the silicon (001) surface

Energy Technology Data Exchange (ETDEWEB)

Buecking, N

2007-11-05

In this work a new theoretical formalism is introduced in order to simulate the phononinduced relaxation of a non-equilibrium distribution to equilibrium at a semiconductor surface numerically. The non-equilibrium distribution is effected by an optical excitation. The approach in this thesis is to link two conventional, but approved methods to a new, more global description: while semiconductor surfaces can be investigated accurately by density-functional theory, the dynamical processes in semiconductor heterostructures are successfully described by density matrix theory. In this work, the parameters for density-matrix theory are determined from the results of density-functional calculations. This work is organized in two parts. In Part I, the general fundamentals of the theory are elaborated, covering the fundamentals of canonical quantizations as well as the theory of density-functional and density-matrix theory in 2{sup nd} order Born approximation. While the formalism of density functional theory for structure investigation has been established for a long time and many different codes exist, the requirements for density matrix formalism concerning the geometry and the number of implemented bands exceed the usual possibilities of the existing code in this field. A special attention is therefore attributed to the development of extensions to existing formulations of this theory, where geometrical and fundamental symmetries of the structure and the equations are used. In Part II, the newly developed formalism is applied to a silicon (001)surface in a 2 x 1 reconstruction. As first step, density-functional calculations using the LDA functional are completed, from which the Kohn-Sham-wave functions and eigenvalues are used to calculate interaction matrix elements for the electron-phonon-coupling an the optical excitation. These matrix elements are determined for the optical transitions from valence to conduction bands and for electron-phonon processes inside the

Strong nonreciprocity of phonon polaritons of an insulator at its boundary with an ideal metal or superconductor in a magnetic field

International Nuclear Information System (INIS)

Chupis, I.E.; Mamaluy, D.A.

2000-01-01

Surface phonon polaritons in a semi-infinite insulator in a constant magnetic field at the boundary with an ideal metal or a superconductor have been considered. These phonon polaritons are induced by dynamic magnetoelectric interaction, which exists in the presence of a magnetic field. The modes of these surface polaritons appreciably differ in opposite directions of the magnetic field or the propagation of the wave. As a result, polaritons of a given optical or infrared frequency propagate only in one direction with respect to the magnetic field, which is the effect of rectification of surface electromagnetic waves. The inversion of the magnetic field results in 'switching on' or 'switching off' of surface polaritons. The existence of radiant surface polariton modes is predicted. (author)

Pump pulse duration dependence of coherent phonon amplitudes in antimony

Energy Technology Data Exchange (ETDEWEB)

Misochko, O. V., E-mail: misochko@issp.ac.ru [Russian Academy of Sciences, Institute of Solid State Physics (Russian Federation)

2016-08-15

Coherent optical phonons of A{sub 1k} and E{sub k} symmetry in antimony have been studied using the femtosecond pump–probe technique. By varying the pump-pulse duration and keeping the probe duration constant, it was shown that the amplitude of coherent phonons of both symmetries exponentially decreases with increasing pulse width. It was found that the amplitude decay rate for the fully symmetric phonons with larger frequency is greater than that of the doubly degenerate phonons, whereas the frequency and lifetime for coherent phonons of both symmetries do not depend on the pump-pulse duration. Based on this data, the possibility of separation between dynamic and kinematic contributions to the generation mechanism of coherent phonons is discussed.

Two-phonon states in nuclei - from surface vibrations to wobbling motion

International Nuclear Information System (INIS)

Hamamoto, Ikuko

2003-01-01

Being stimulated by the recent identification of the two-phonon wobbling excitation, first I make a brief survey of various two-phonon states in nuclear physics, in connection with experimental observations. Then, I discuss the wobbling-phonon excitation in the presence of particle alignments, which is nicely pinned down in the recent experiments of the nucleus 71 163 Lu 92 . (author)

Electronic and optical properties of ZrB12 and YB6. Discussion on electron-phonon coupling

International Nuclear Information System (INIS)

Teyssier, J.; Kuzmenko, A.; Marel, D. van der; Lortz, R.; Junod, A.; Filippov, V.; Shitsevalova, N.

2006-01-01

We report the optical properties of high-quality single crystals of low temperature superconductors zirconiumdodecaboride ZrB 12 (T c =5.95 K) and yttrium hexaboride YB 6 (T c =7.15 K) in the range 6 meV-4.6 eV at room temperature. The experimental optical conductivity was extracted from the analysis of the reflectivity in the infrared range and ellipsometry measurement of the dielectric function in the visible range. The electronic band structure of these compounds was calculated by the self-consistent full-potential LMTO method and used to compute the interband part of the optical conductivity and the plasma frequency Ω p . A good agreement was observed between the interband part of the experimental optical conductivities and the band structure calculations. Different methods combining optical spectroscopy, resistivity, specific heat measurements and results of band structure calculations are used to determine the electron-phonon coupling constant. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Challenges in realizing ultraflat materials surfaces

Directory of Open Access Journals (Sweden)

Takashi Yatsui

2013-12-01

Full Text Available Ultraflat surface substrates are required to achieve an optimal performance of future optical, electronic, or optoelectronic devices for various applications, because such surfaces reduce the scattering loss of photons, electrons, or both at the surfaces and interfaces. In this paper, we review recent progress toward the realization of ultraflat materials surfaces. First, we review the development of surface-flattening techniques. Second, we briefly review the dressed photon–phonon (DPP, a nanometric quasiparticle that describes the coupled state of a photon, an electron, and a multimode-coherent phonon. Then, we review several recent developments based on DPP-photochemical etching and desorption processes, which have resulted in angstrom-scale flat surfaces. To confirm that the superior flatness of these surfaces that originated from the DPP process, we also review a simplified mathematical model that describes the scale-dependent effects of optical near-fields. Finally, we present the future outlook for these technologies.

``New'' energy states lead to phonon-less optoelectronic properties in nanostructured silicon

Science.gov (United States)

Singh, Vivek; Yu, Yixuan; Korgel, Brian; Nagpal, Prashant

2014-03-01

Silicon is arguably one of the most important technological material for electronic applications. However, indirect bandgap of silicon semiconductor has prevented optoelectronic applications due to phonon assistance required for photon light absorption/emission. Here we show, that previously unexplored surface states in nanostructured silicon can couple with quantum-confined energy levels, leading to phonon-less exciton-recombination and photoluminescence. We demonstrate size dependence (2.4 - 8.3 nm) of this coupling observed in small uniform silicon nanocrystallites, or quantum-dots, by direct measurements of their electronic density of states and low temperature measurements. To enhance the optical absorption of the these silicon quantum-dots, we utilize generation of resonant surface plasmon polariton waves, which leads to several fold increase in observed spectrally-resolved photocurrent near the quantum-confined bandedge states. Therefore, these enhanced light emission and absorption enhancement can have important implications for applications of nanostructured silicon for optoelectronic applications in photovoltaics and LEDs.

Controlling competing orders via nonequilibrium acoustic phonons: Emergence of anisotropic effective electronic temperature

Science.gov (United States)

Schütt, Michael; Orth, Peter P.; Levchenko, Alex; Fernandes, Rafael M.

2018-01-01

Ultrafast perturbations offer a unique tool to manipulate correlated systems due to their ability to promote transient behaviors with no equilibrium counterpart. A widely employed strategy is the excitation of coherent optical phonons, as they can cause significant changes in the electronic structure and interactions on short time scales. One of the issues, however, is the inevitable heating that accompanies these resonant excitations. Here, we explore a promising alternative route: the nonequilibrium excitation of acoustic phonons, which, due to their low excitation energies, generally lead to less heating. We demonstrate that driving acoustic phonons leads to the remarkable phenomenon of a momentum-dependent effective temperature, by which electronic states at different regions of the Fermi surface are subject to distinct local temperatures. Such an anisotropic effective electronic temperature can have a profound effect on the delicate balance between competing ordered states in unconventional superconductors, opening a so far unexplored avenue to control correlated phases.

Magnon and phonon thermometry with inelastic light scattering

Science.gov (United States)

Olsson, Kevin S.; An, Kyongmo; Li, Xiaoqin

2018-04-01

Spin caloritronics investigates the interplay between the transport of spin and heat. In the spin Seebeck effect, a thermal gradient across a magnetic material generates a spin current. A temperature difference between the energy carriers of the spin and lattice subsystems, namely the magnons and phonons, is necessary for such thermal nonequilibrium generation of spin current. Inelastic light scattering is a powerful method that can resolve the individual temperatures of magnons and phonons. In this review, we discuss the thermometry capabilities of inelastic light scattering for measuring optical and acoustic phonons, as well as magnons. A scattering spectrum offers three temperature sensitive parameters: frequency shift, linewidth, and integrated intensity. We discuss the temperatures measured via each of these parameters for both phonon and magnons. Finally, we discuss inelastic light scattering experiments that have examined the magnon and phonon temperatures in thermal nonequilibrium which are particularly relevant to spin caloritronic phenomena.

Anisotropic surface acoustic waves in tungsten/lithium niobate phononic crystals

Science.gov (United States)

Sun, Jia-Hong; Yu, Yuan-Hai

2018-02-01

Phononic crystals (PnC) were known for acoustic band gaps for different acoustic waves. PnCs were already applied in surface acoustic wave (SAW) devices as reflective gratings based on the band gaps. In this paper, another important property of PnCs, the anisotropic propagation, was studied. PnCs made of circular tungsten films on a lithium niobate substrate were analyzed by finite element method. Dispersion curves and equal frequency contours of surface acoustic waves in PnCs of various dimensions were calculated to study the anisotropy. The non-circular equal frequency contours and negative refraction of group velocity were observed. Then PnC was applied as an acoustic lens based on the anisotropic propagation. Trajectory of SAW passing PnC lens was calculated and transmission of SAW was optimized by selecting proper layers of lens and applying tapered PnC. The result showed that PnC lens can suppress diffraction of surface waves effectively and improve the performance of SAW devices.

Creation of high-energy phonons by four-phonon processes in anisotropic phonon system of He II

International Nuclear Information System (INIS)

Adamenko, I.N.; Nemchenko, K.E.; Slipko, V.A.; Kitsenko, Yu.A.; Wyatt, A.F.G.

2007-01-01

The problem of the creation of high-energy phonons (h-phonons) by a pulse of low-energy phonons (I-phonons) moving from a heater to a detector in superfluid helium, is solved. The rate of h-phonon creation is obtained and it is shown that created h-phonons occupy a much smaller solid angle in momentum space, than the I-phonons. Analytical expression for the creation rate of h-phonon, along the symmetry axis of a pulse, are derived. It allows us to get useful approximate analytical expressions for creation rate of h-phonons. The time dependences of the parameters which describe the I-phonon pulse are obtained. This shows that half of the initial energy of I-phonon pulse can be transferred into h-phonons. The results of the calculations are compared with experimental data and we show that this theory explains a number of experimental results. The value of the momentum, which separates the I- and h-phonon subsystems, is found

Pseudospins and Topological Effects of Phonons in a Kekulé Lattice

Science.gov (United States)

Liu, Yizhou; Lian, Chao-Sheng; Li, Yang; Xu, Yong; Duan, Wenhui

2017-12-01

The search for exotic topological effects of phonons has attracted enormous interest for both fundamental science and practical applications. By studying phonons in a Kekulé lattice, we find a new type of pseudospin characterized by quantized Berry phases and pseudoangular momenta, which introduces various novel topological effects, including topologically protected pseudospin-polarized interface states and a phonon pseudospin Hall effect. We further demonstrate a pseudospin-contrasting optical selection rule and a pseudospin Zeeman effect, giving a complete generation-manipulation-detection paradigm of the phonon pseudospin. The pseudospin and topology-related physics revealed for phonons is general and applicable for electrons, photons, and other particles.

Phonon and free-charge carrier properties in group-III nitride heterostructures investigated by spectroscopic ellipsometry and optical Hall effect

Science.gov (United States)

Schoeche, Stefan

The material class of group-III nitrides gained tremendous technological importance for optoelectronic and high-power/high-frequency amplification devices. Tunability of the direct band gap from 0.65 eV (InN) to 6.2 eV (AlN) by alloying, high breakthrough voltages and intrinsic mobilities, as well as the formation of highly mobile 2d electron gases (2DEG) at heterointerfaces make these compounds ideal for many applications. GaN and Ga-rich alloys are well studied and current research is mainly device-oriented. For example, choice and quality of the gate dielectric significantly influence device performance in high-electron mobility transistors (HEMT) which utilize highly mobile 2DEGs at heterointerfaces. Experimental access to the 2DEG channel properties without influence from parasitic currents or contact properties are desirable. In- and Al-rich ternary alloys are less explored than Ga-rich compounds. For InN and In-rich alloys, while many material parameters such as stiffness constants or effective mass values are largely unknown, reliable p-type doping is a major challenge, also because p-type conducting channels are buried within highly conductive n-type material formed at the surface and interfaces preventing electrical characterization. For AlN and high-Al content alloys, doping mechanisms are not understood and reliable fabrication of material with high free-charge carrier (FCC) concentrations was achieved just recently. Difficulties to form ohmic contacts impair electrical measurements and optical characterization is impeded by lack of high-energy excitation sources. In this work, spectroscopic ellipsometry over the wide spectral range from the THz to VUV in combination with optical Hall effect (generalized ellipsometry with applied magnetic field) from THz to MIR are applied in order to investigate the phonon modes and FCC properties in group-III nitride heterostructures. Adequate model descriptions and analysis strategies are introduced which allow

Reststrahlen Band Optics for the Advancement of Far-Infrared Optical Architecture

Science.gov (United States)

Streyer, William Henderson

The dissertation aims to build a case for the benefits and means of investigating novel optical materials and devices operating in the underdeveloped far-infrared (20 - 60 microns) region of the electromagnetic spectrum. This dissertation and the proposed future investigations described here have the potential to further the advancement of new and enhanced capabilities in fields such as astronomy, medicine, and the petrochemical industry. The first several completed projects demonstrate techniques for developing far-infrared emission sources using selective thermal emitters, which could operate more efficiently than their simple blackbody counterparts commonly used as sources in this wavelength region. The later projects probe the possible means of linking bulk optical phonon populations through interaction with surface modes to free space photons. This is a breakthrough that would enable the development of a new class of light sources operating in the far-infrared. Chapter 1 introduces the far-infrared wavelength range along with many of its current and potential applications. The limited capabilities of the available optical architecture in this range are outlined along with a discussion of the state-of-the-art technology available in this range. Some of the basic physical concepts routinely applied in this dissertation are reviewed; namely, the Drude formalism, semiconductor Reststrahlen bands, and surface polaritons. Lastly, some of the physical challenges that impede the further advancement of far-infrared technology, despite remarkable recent success in adjacent regions of the electromagnetic spectrum, are discussed. Chapter 2 describes the experimental and computational methods employed in this dissertation. Spectroscopic techniques used to investigate both the mid-infrared and far-infrared wavelength ranges are reviewed, including a brief description of the primary instrument of infrared spectroscopy, the Fourier Transform Infrared (FTIR) spectrometer

Tunable phonon-induced transparency in bilayer graphene nanoribbons.

Science.gov (United States)

Yan, Hugen; Low, Tony; Guinea, Francisco; Xia, Fengnian; Avouris, Phaedon

2014-08-13

In the phenomenon of plasmon-induced transparency, which is a classical analogue of electromagnetically induced transparency (EIT) in atomic gases, the coherent interference between two plasmon modes results in an optical transparency window in a broad absorption spectrum. With the requirement of contrasting lifetimes, typically one of the plasmon modes involved is a dark mode that has limited coupling to the electromagnetic radiation and possesses relatively longer lifetime. Plasmon-induced transparency not only leads to light transmission at otherwise opaque frequency regions but also results in the slowing of light group velocity and enhanced optical nonlinearity. In this article, we report an analogous behavior, denoted as phonon-induced transparency (PIT), in AB-stacked bilayer graphene nanoribbons. Here, light absorption due to the plasmon excitation is suppressed in a narrow window due to the coupling with the infrared active Γ-point optical phonon, whose function here is similar to that of the dark plasmon mode in the plasmon-induced transparency. We further show that PIT in bilayer graphene is actively tunable by electrostatic gating and estimate a maximum slow light factor of around 500 at the phonon frequency of 1580 cm(-1), based on the measured spectra. Our demonstration opens an avenue for the exploration of few-photon nonlinear optics and slow light in this novel two-dimensional material.

Scattering of phonons by dislocations

International Nuclear Information System (INIS)

Anderson, A.C.

1979-01-01

By 1950, an explicit effort had been launched to use lattice thermal conductivity measurements in the investigation of defect structures in solids. This technique has been highly successful, especially when combined with the measurements of other properties such as optical absorption. One exception has been the study of dislocations. Although dislocations have a profound effect on the phonon thermal conductivity, the mechanisms of the phonon-dislocation interaction are poorly understood. The most basic questions are still debated in the literature. It therefore is pointless to attempt a quantitative comparison between an extensive accumulation of experimental data on the one hand, and the numerous theoretical models on the other. Instead, this chapter will attempt to glean a few qualitative conclusions from the existing experimental data. These results will then be compared with two general models which incorporate, in a qualitative manner, most of the proposed theories of the phonon-dislocation interaction. Until very recently, measurement of thermal conductivity was the only means available to probe the interaction between phonons and defects at phonon frequencies above the standard ultrasonic range of approx. = 10 9 Hz. The introductory paragraphs provide a brief review of the thermal-conductivity technique and the problems which are encountered in practice. There is also a brief presentation of the theoretical models and the complications that may occur in more realistic situations

Optical and acoustic phonon modes in strained InGaAs/GaAs rolled up tubes

Science.gov (United States)

Angelova, T.; Shtinkov, N.; Ivanov, Ts.; Donchev, V.; Cantarero, A.; Deneke, Ch.; Schmidt, O. G.; Cros, A.

2012-05-01

Rolled-up semiconductor tubes of various diameters made of alternating In0.215Ga0.785As/GaAs layers have been investigated by means of Raman scattering. The optical and acoustic phonon modes of individual tubes have been studied and compared with the characteristics of the surrounding material. After tube formation, the frequency of the phonon modes shifts with respect to the as-grown material and disorder activated modes are observed. The frequency shifts are related to the residual strain in the tubes through the deformation potential approximation. Good agreement with atomistic valence force field simulations and x-ray micro-diffraction measurements is found. By comparison with x-ray data, a Raman strain constant K = 0.65 is proposed for In0.215Ga0.785As. In the low frequency range, acoustic mode doublets are observed on the tubes that are absent in the surrounding material. They show clear evidence of the formation of periodic superlattices after the rolling-up process, and give insight into the quality of their interfaces.

The Influence of the Optical Phonons on the Non-equilibrium Spin Current in the Presence of Spin-Orbit Couplings

Science.gov (United States)

Hasanirokh, K.; Phirouznia, A.; Majidi, R.

2016-02-01

The influence of the electron coupling with non-polarized optical phonons on magnetoelectric effects of a two-dimensional electron gas system has been investigated in the presence of the Rashba and Dresselhaus spin-orbit couplings. Numerical calculations have been performed in the non-equilibrium regime. In the previous studies in this field, it has been shown that the Rashba and Dresselhaus couplings cannot generate non-equilibrium spin current and the spin current vanishes identically in the absence of other relaxation mechanisms such as lattice vibrations. However, in the current study, based on a semiclassical approach, it was demonstrated that in the presence of electron-phonon coupling, the spin current and other magnetoelectric quantities have been modulated by the strength of the spin-orbit interactions.

Phonon tunneling through a double barrier system

International Nuclear Information System (INIS)

Villegas, Diosdado; León-Pérez, Fernando de; Pérez-Álvarez, R.; Arriaga, J.

2015-01-01

The tunneling of optical and acoustic phonons at normal incidence on a double-barrier is studied in this paper. Transmission coefficients and resonance conditions are derived theoretically under the assumption that the long-wavelength approximation is valid. It is shown that the behavior of the transmission coefficients for the symmetric double barrier has a Lorentzian form close to resonant frequencies and that Breit–Wigner's formula have a general validity in one-dimensional phonon tunneling. Authors also study the so-called generalized Hartman effect in the tunneling of long-wavelength phonons and show that this effect is a numerical artifact resulting from taking the opaque limit before exploring the variation with a finite barrier width. This study could be useful for the design of acoustic devices

Phonon tunneling through a double barrier system

Energy Technology Data Exchange (ETDEWEB)

Villegas, Diosdado [Departamento de Física, Universidad Central “Marta Abreu” de Las Villas, CP 54830, Santa Clara, Villa Clara (Cuba); Instituto de Física, Universidad Autónoma de Puebla, 18 Sur y San Claudio, Edif. 110A, Ciudad Universitaria, 72570 Puebla (Mexico); León-Pérez, Fernando de [Centro Universitario de la Defensa de Zaragoza, Ctra. de Huesca s/n, E-50090 Zaragoza (Spain); Pérez-Álvarez, R. [Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca (Mexico); Arriaga, J., E-mail: arriaga@ifuap.buap.mx [Instituto de Física, Universidad Autónoma de Puebla, 18 Sur y San Claudio, Edif. 110A, Ciudad Universitaria, 72570 Puebla (Mexico)

2015-04-15

The tunneling of optical and acoustic phonons at normal incidence on a double-barrier is studied in this paper. Transmission coefficients and resonance conditions are derived theoretically under the assumption that the long-wavelength approximation is valid. It is shown that the behavior of the transmission coefficients for the symmetric double barrier has a Lorentzian form close to resonant frequencies and that Breit–Wigner's formula have a general validity in one-dimensional phonon tunneling. Authors also study the so-called generalized Hartman effect in the tunneling of long-wavelength phonons and show that this effect is a numerical artifact resulting from taking the opaque limit before exploring the variation with a finite barrier width. This study could be useful for the design of acoustic devices.

The anharmonic phonon decay rate in group-III nitrides

International Nuclear Information System (INIS)

Srivastava, G P

2009-01-01

Measured lifetimes of hot phonons in group-III nitrides have been explained theoretically by considering three-phonon anharmonic interaction processes. The basic ingredients of the theory include full phonon dispersion relations obtained from the application of an adiabatic bond charge model and crystal anharmonic potential within the isotropic elastic continuum model. The role of various decay routes, such as Klemens, Ridley, Vallee-Bogani and Barman-Srivastava channels, in determining the lifetimes of the Raman active zone-centre longitudinal optical (LO) modes in BN (zincblende structure) and A 1 (LO) modes in AlN, GaN and InN (wurtzite structure) has been quantified.

Reduction of thermal conductivity in phononic nanomesh structures.

Science.gov (United States)

Yu, Jen-Kan; Mitrovic, Slobodan; Tham, Douglas; Varghese, Joseph; Heath, James R

2010-10-01

Controlling the thermal conductivity of a material independently of its electrical conductivity continues to be a goal for researchers working on thermoelectric materials for use in energy applications and in the cooling of integrated circuits. In principle, the thermal conductivity κ and the electrical conductivity σ may be independently optimized in semiconducting nanostructures because different length scales are associated with phonons (which carry heat) and electric charges (which carry current). Phonons are scattered at surfaces and interfaces, so κ generally decreases as the surface-to-volume ratio increases. In contrast, σ is less sensitive to a decrease in nanostructure size, although at sufficiently small sizes it will degrade through the scattering of charge carriers at interfaces. Here, we demonstrate an approach to independently controlling κ based on altering the phonon band structure of a semiconductor thin film through the formation of a phononic nanomesh film. These films are patterned with periodic spacings that are comparable to, or shorter than, the phonon mean free path. The nanomesh structure exhibits a substantially lower thermal conductivity than an equivalently prepared array of silicon nanowires, even though this array has a significantly higher surface-to-volume ratio. Bulk-like electrical conductivity is preserved. We suggest that this development is a step towards a coherent mechanism for lowering thermal conductivity.

Manipulation of Phonons with Phononic Crystals

Energy Technology Data Exchange (ETDEWEB)

Leseman, Zayd Chad [Univ. of New Mexico, Albuquerque, NM (United States)

2015-07-09

There were three research goals associated with this project. First, was to experimentally demonstrate phonon spectrum control at THz frequencies using Phononic Crystals (PnCs), i.e. demonstrate coherent phonon scattering with PnCs. Second, was to experimentally demonstrate analog PnC circuitry components at GHz frequencies. The final research goal was to gain a fundamental understanding of phonon interaction using computational methods. As a result of this work, 7 journal papers have been published, 1 patent awarded, 14 conference presentations given, 4 conference publications, and 2 poster presentations given.

Electron-phonon interaction and its manifestation in high-temperature superconductors

International Nuclear Information System (INIS)

Maksimov, E.G.

1995-01-01

Different types of band structure approaches for a description of electrons in systems with strong correlations are discussed. It is shown that all methods considered give different electron energy dispersions and Fermi surfaces. The good agreement between measured Fermi surfaces and those calculated by LDA shows that the spatial dispersion of the correlation interaction is not so important in HTSC systems. The same conclusion can be obtained from the optical and photoemission spectra. It is shown that the most important contribution beyond a band structure approach is given by an energy dependence of the electron self-energy. The most likely interaction responsible for this energy dependence is the electron-phonon one. Evidences about this fact are given

Flexural phonon limited phonon drag thermopower in bilayer graphene

Science.gov (United States)

Ansari, Mohd Meenhaz; Ashraf, SSZ

2018-05-01

We investigate the phonon drag thermopower from flexural phonons as a function of electron temperature and carrier concentration in the Bloch-Gruneisen regime in non-strained bilayer graphene using Boltzmann transport equation approach. The flexural phonons are expected to be the major source of intrinsic scattering mechanism in unstrained bilayer graphene due to their large density. The flexural phonon modes dispersion relation is quadratic so these low energy flexural phonons abound at room temperature and as a result deform the bilayer graphene sheet in the out of plane direction and affects the transport properties. We also produce analytical result for phonon-drag thermopower from flexural phonons and find that phonon-drag thermopower depicts T2 dependence on temperature and n-1 on carrier concentration.

Strongly correlated quasi-one-dimensional bands: Ground states, optical absorption, and phonons

International Nuclear Information System (INIS)

Campbell, D.K.; Gammel, J.T.; Loh, E.Y. Jr.

1989-01-01

Using the Lanczos method for exact diagonalization on systems up to 14 sites, combined with a novel ''phase randomization'' technique for extracting more information from these small systems, we investigate several aspects of the one-dimensional Peierls-Hubbard Hamiltonian, in the context of trans-polyacetylene: the dependence of the ground state dimerization on the strength of the electron-electron interactions, including the effects of ''off-diagonal'' Coulomb terms generally ignored in the Hubbard model; the phonon vibrational frequencies and dispersion relations, and the optical absorption properties, including the spectrum of absorptions as a function of photon energy. These three different observables provide considerable insight into the effects of electron-electron interactions on the properties of real materials and thus into the nature of strongly correlated electron systems. 29 refs., 11 figs

Phonon anomalies in optical spectra of LiNbO3 single crystals

Directory of Open Access Journals (Sweden)

ANDREJA VALCIC

2004-06-01

Full Text Available LiNbO3 single crystals were grown by the Czochralski technique in an air atmosphere. The critical crystal diameter Dc = 1.5 cm and the critical rate of rotation wc = 35 rpm were calculated by equations from the hydrodynamics of the melt. The domain inversion was carried out at 1430 K using a 3.75 V/cm electric field for 10 min. The obtained crystals were cut, polished and etched to determine the presence of dislocations and single domain structures. The optical properties were studied by infrared and Raman spectroscopy as a function of temperature. With decreasing temperature, an atypical behaviour of the phonon modes could be seen in the ferroelectrics LiNbO3. The obtained results are discussed and compared with published data.

Effect of Holstein phonons on the electronic properties of graphene

International Nuclear Information System (INIS)

Stauber, T; Peres, N M R

2008-01-01

We obtain the self-energy of the electronic propagator due to the presence of Holstein polarons within the first Born approximation. This leads to a renormalization of the Fermi velocity of 1%. We further compute the optical conductivity of the system at the Dirac point and at finite doping within the Kubo formula. We argue that the effects due to Holstein phonons are negligible and that the Boltzmann approach, which does not include inter-band transitions and can thus not treat optical phonons due to their high energy of ℎω 0 ∼ 0.1-0.2 eV, remains valid

Theory of Raman scattering in coupled electron-phonon systems

Science.gov (United States)

Itai, K.

1992-01-01

The Raman spectrum is calculated for a coupled conduction-electron-phonon system in the zero-momentum-transfer limit. The Raman scattering is due to electron-hole excitations and phonons as well. The phonons of those branches that contribute to the electron self-energy and the correction of the electron-phonon vertex are assumed to have flat energy dispersion (the Einstein phonons). The effect of electron-impurity scattering is also incorporated. Both the electron-phonon interaction and the electron-impurity interaction cause the fluctuation of the electron distribution between different parts of the Fermi surface, which results in overdamped zero-sound modes of various symmetries. The scattering cross section is obtained by solving the Bethe-Salpeter equation. The spectrum shows a lower threshold at the smallest Einstein phonon energy when only the electron-phonon interaction is taken into consideration. When impurities are also taken into consideration, the threshold disappears.

Reduction of thermal conductivity in phononic nanomesh structures

KAUST Repository

Yu, Jen-Kan

2010-07-25

Controlling the thermal conductivity of a material independently of its electrical conductivity continues to be a goal for researchers working on thermoelectric materials for use in energy applications1,2 and in the cooling of integrated circuits3. In principle, the thermal conductivity κ and the electrical conductivity σ may be independently optimized in semiconducting nanostructures because different length scales are associated with phonons (which carry heat) and electric charges (which carry current). Phonons are scattered at surfaces and interfaces, so κ generally decreases as the surface-to-volume ratio increases. In contrast, σ is less sensitive to a decrease in nanostructure size, although at sufficiently small sizes it will degrade through the scattering of charge carriers at interfaces. Here, we demonstrate an approach to independently controlling κ based on altering the phonon band structure of a semiconductor thin film through the formation of a phononic nanomesh film. These films are patterned with periodic spacings that are comparable to, or shorter than, the phonon mean free path. The nanomesh structure exhibits a substantially lower thermal conductivity than an equivalently prepared array of silicon nanowires, even though this array has a significantly higher surface-to-volume ratio. Bulk-like electrical conductivity is preserved. We suggest that this development is a step towards a coherent mechanism for lowering thermal conductivity. © 2010 Macmillan Publishers Limited. All rights reserved.

Optical properties of a single-colour centre in diamond with a green zero-phonon line

International Nuclear Information System (INIS)

Smith, Jason M; Grazioso, Fabio; Patton, Brian R; Dolan, Philip R; Markham, Matthew L; Twitchen, Daniel J

2011-01-01

We report the photoluminescence characteristics of a colour centre in diamond grown by plasma-assisted chemical vapour deposition. The colour centre emits with a sharp zero-phonon line at 2.330 eV (λ=532 nm) and a lifetime of 3.3 ns, thus offering potential for a high-speed single-photon source with green emission. It displays a vibronic emission spectrum with a Huang-Rhys parameter of 2.48 at 77 K. Hanbury-Brown and Twiss measurements reveal that the electronic level structure of the defect includes a metastable state that can be populated from the optically excited state.

Low-Field Mobility and Galvanomagnetic Properties of Holes in Germanium with Phonon Scattering

DEFF Research Database (Denmark)

Lawætz, Peter

1968-01-01

acoustic scattering, no overall consistency is found between available galvanomagnetic data and deformation potentials derived directly from experiments on strained Ge. The discrepancies may be ascribed to ionized-impurity scattering, but at higher temperatures where optical phonon scattering is operative......A theoretical calculation of the low-field galvanomagnetic properties of holes in Ge has been carried out incorporating all relevant details of the band structure. The scattering is limited to acoustic and optical phonons and is described by the deformation potentials a, b, d, and d0. For pure......, the deviations are still appreciable. We are led to conclude that the deformation-potential theory of phonon scattering needs reconsideration, and a nontrivial correction is pointed out....

Use of thulium-sensitized rare earth-doped low phonon energy crystalline hosts for IR sources.

Science.gov (United States)

Ganem, Joseph; Bowman, Steven R

2013-11-01

Crystalline hosts with low phonon energies enable novel energy transfer processes when doped with rare earth ions. Two applications of energy transfer for rare earth ions in thulium-sensitized low phonon energy crystals that result in infrared luminescence are discussed. One application is an endothermic, phonon-assisted cross-relaxation process in thulium-doped yttrium chloride that converts lattice phonons to infrared emission, which raises the possibility of a fundamentally new method for achieving solid-state optical cooling. The other application is an optically pumped mid-IR phosphor using thulium-praseodymium-doped potassium lead chloride that converts 805-nm diode light to broadband emission from 4,000 to 5,500 nm. These two applications in chloride crystals are discussed in terms of critical radii calculated from Forster-Dexter energy transfer theory. It is found that the critical radii for electric dipole-dipole interactions in low phonon energy chloride crystals are comparable to those in conventional oxide and fluoride crystals. It is the reduction in multi-phonon relaxation rates in chloride crystals that enable these additional energy transfer processes and infrared luminescence.

Quantum decoherence of phonons in Bose-Einstein condensates

Science.gov (United States)

Howl, Richard; Sabín, Carlos; Hackermüller, Lucia; Fuentes, Ivette

2018-01-01

We apply modern techniques from quantum optics and quantum information science to Bose-Einstein condensates (BECs) in order to study, for the first time, the quantum decoherence of phonons of isolated BECs. In the last few years, major advances in the manipulation and control of phonons have highlighted their potential as carriers of quantum information in quantum technologies, particularly in quantum processing and quantum communication. Although most of these studies have focused on trapped ion and crystalline systems, another promising system that has remained relatively unexplored is BECs. The potential benefits in using this system have been emphasized recently with proposals of relativistic quantum devices that exploit quantum states of phonons in BECs to achieve, in principle, superior performance over standard non-relativistic devices. Quantum decoherence is often the limiting factor in the practical realization of quantum technologies, but here we show that quantum decoherence of phonons is not expected to heavily constrain the performance of these proposed relativistic quantum devices.

Optical Nonlinearities and Ultrafast Carrier Dynamics in Semiconductor Quantum Dots

Energy Technology Data Exchange (ETDEWEB)

Klimov, V.; McBranch, D.; Schwarz, C.

1998-08-10

Low-dimensional semiconductors have attracted great interest due to the potential for tailoring their linear and nonlinear optical properties over a wide-range. Semiconductor nanocrystals (NC's) represent a class of quasi-zero-dimensional objects or quantum dots. Due to quantum cordhement and a large surface-to-volume ratio, the linear and nonlinear optical properties, and the carrier dynamics in NC's are significantly different horn those in bulk materials. napping at surface states can lead to a fast depopulation of quantized states, accompanied by charge separation and generation of local fields which significantly modifies the nonlinear optical response in NC's. 3D carrier confinement also has a drastic effect on the energy relaxation dynamics. In strongly confined NC's, the energy-level spacing can greatly exceed typical phonon energies. This has been expected to significantly inhibit phonon-related mechanisms for energy losses, an effect referred to as a phonon bottleneck. It has been suggested recently that the phonon bottleneck in 3D-confined systems can be removed due to enhanced role of Auger-type interactions. In this paper we report femtosecond (fs) studies of ultrafast optical nonlinearities, and energy relaxation and trap ping dynamics in three types of quantum-dot systems: semiconductor NC/glass composites made by high temperature precipitation, ion-implanted NC's, and colloidal NC'S. Comparison of ultrafast data for different samples allows us to separate effects being intrinsic to quantum dots from those related to lattice imperfections and interface properties.

3D continuum phonon model for group-IV 2D materials

DEFF Research Database (Denmark)

Willatzen, Morten; Lew Yan Voon, Lok C.; Gandi, Appala Naidu

2017-01-01

. In this paper, we use the model to not only compare the phonon spectra among the group-IV materials but also to study whether these phonons differ from those of a compound material such as molybdenum disulfide. The origin of quadratic modes is clarified. Mode coupling for both graphene and silicene is obtained......, contrary to previous works. Our model allows us to predict the existence of confined optical phonon modes for the group-IV materials but not for molybdenum disulfide. A comparison of the long-wavelength modes to density-functional results is included....

Phononic fluidics: acoustically activated droplet manipulations

Science.gov (United States)

Reboud, Julien; Wilson, Rab; Bourquin, Yannyk; Zhang, Yi; Neale, Steven L.; Cooper, Jonathan M.

2011-02-01

Microfluidic systems have faced challenges in handling real samples and the chip interconnection to other instruments. Here we present a simple interface, where surface acoustic waves (SAWs) from a piezoelectric device are coupled into a disposable acoustically responsive microfluidic chip. By manipulating droplets, SAW technologies have already shown their potential in microfluidics, but it has been limited by the need to rely upon mixed signal generation at multiple interdigitated electrode transducers (IDTs) and the problematic resulting reflections, to allow complex fluid operations. Here, a silicon chip was patterned with phononic structures, engineering the acoustic field by using a full band-gap. It was simply coupled to a piezoelectric LiNbO3 wafer, propagating the SAW, via a thin film of water. Contrary to the use of unstructured superstrates, phononic metamaterials allowed precise spatial control of the acoustic energy and hence its interaction with the liquids placed on the surface of the chip, as demonstrated by simulations. We further show that the acoustic frequency influences the interaction between the SAW and the phononic lattice, providing a route to programme complex fluidic manipulation onto the disposable chip. The centrifugation of cells from a blood sample is presented as a more practical demonstration of the potential of phononic crystals to realize diagnostic systems.

Phonon density of states and anharmonicity of UO2

Science.gov (United States)

Pang, Judy W. L.; Chernatynskiy, Aleksandr; Larson, Bennett C.; Buyers, William J. L.; Abernathy, Douglas L.; McClellan, Kenneth J.; Phillpot, Simon R.

2014-03-01

Phonon density of states (PDOS) measurements have been performed on polycrystalline UO2 at 295 and 1200 K using time-of-flight inelastic neutron scattering to investigate the impact of anharmonicity on the vibrational spectra and to benchmark ab initio PDOS simulations performed on this strongly correlated Mott insulator. Time-of-flight PDOS measurements include anharmonic linewidth broadening, inherently, and the factor of ˜7 enhancement of the oxygen spectrum relative to the uranium component by the increased neutron sensitivity to the oxygen-dominated optical phonon modes. The first-principles simulations of quasiharmonic PDOS spectra were neutron weighted and anharmonicity was introduced in an approximate way by convolution with wave-vector-weighted averages over our previously measured phonon linewidths for UO2, which are provided in numerical form. Comparisons between the PDOS measurements and the simulations show reasonable agreement overall, but they also reveal important areas of disagreement for both high and low temperatures. The discrepancies stem largely from a ˜10 meV compression in the overall bandwidth (energy range) of the oxygen-dominated optical phonons in the simulations. A similar linewidth-convoluted comparison performed with the PDOS spectrum of Dolling et al. obtained by shell-model fitting to their historical phonon dispersion measurements shows excellent agreement with the time-of-flight PDOS measurements reported here. In contrast, we show by comparisons of spectra in linewidth-convoluted form that recent first-principles simulations for UO2 fail to account for the PDOS spectrum determined from the measurements of Dolling et al. These results demonstrate PDOS measurements to be stringent tests for ab inito simulations of phonon physics in UO2 and they indicate further the need for advances in theory to address the lattice dynamics of UO2.

Theory of phonon inelastic atom--surface scattering. I. Quantum mechanical treatment of collision dynamics

International Nuclear Information System (INIS)

Choi, B.H.; Poe, R.T.

1985-01-01

We present a systematic formulation of the atom--surface scattering dynamics which includes the vibrational states of the atoms in the solid (phonons). The properties of the total scattering wave function of the system, a representation of the interaction potential matrix, and the characteristics of the independent physical solutions are all derived from the translational invariance of the full Hamiltonian. The scattering equations in the integral forms as well as the related Green functions were also obtained. The configurational representations of the Green functions, in particular, are quite different from those of the conventional scattering theory where the collision partners are spatially localized. Various versions of the integral expression of scattering, transition, and reactance matrices were also obtained. They are useful for introducing approximation schemes. From the present formulation, some specific theoretical schemes which are more realistic compared to those that have been employed so far and at the same time capable of yielding effective ab initio computation are derived in the following paper. The time reversal invariance and the microscopic reversibility of the atom--surface scattering were discussed. The relations between the in and outgoing scattering wave functions which are satisfied in the atom--surface system and important in the transition matrix methods were presented. The phonon annihilation and creation, and the adsorption and desorption of the atom are related through the time reversal invariance, and thus the microscopic reversibility can be tested by the experiment

Phonon superradiance and phonon laser effect in nanomagnets.

Science.gov (United States)

Chudnovsky, E M; Garanin, D A

2004-12-17

We show that the theory of spin-phonon processes in paramagnetic solids must take into account the coherent generation of phonons by the magnetic centers. This effect should drastically enhance spin-phonon rates in nanoscale paramagnets and in crystals of molecular nanomagnets.

The Importance of Phonons with Negative Phase Quotient in Disordered Solids.

Science.gov (United States)

Seyf, Hamid Reza; Lv, Wei; Rohskopf, Andrew; Henry, Asegun

2018-02-08

Current understanding of phonons is based on the phonon gas model (PGM), which is best rationalized for crystalline materials. However, most of the phonons/modes in disordered materials have a different character and thus may contribute to heat conduction in a fundamentally different way than is described by PGM. For the modes in crystals, which have sinusoidal character, one can separate the modes into two primary categories, namely acoustic and optical modes. However, for the modes in disordered materials, such designations may no longer rigorously apply. Nonetheless, the phase quotient (PQ) is a quantity that can be used to evaluate whether a mode more so shares a distinguishing property of acoustic vibrations manifested as a positive PQ, or a distinguishing property of an optical vibrations manifested as negative PQ. In thinking about this characteristic, there is essentially no intuition regarding the role of positive vs. negative PQ vibrational modes in disordered solids. Given this gap in understanding, herein we studied the respective contributions to thermal conductivity for several disordered solids as a function of PQ. The analysis sheds light on the importance of optical like/negative PQ modes in structurally/compositionally disordered solids, whereas in crystalline materials, the contributions of optical modes are usually small.

High mobility In0.75Ga0.25As quantum wells in an InAs phonon lattice

Science.gov (United States)

Chen, C.; Holmes, S. N.; Farrer, I.; Beere, H. E.; Ritchie, D. A.

2018-03-01

InGaAs based devices are great complements to silicon for CMOS, as they provide an increased carrier saturation velocity, lower operating voltage and reduced power dissipation (International technology roadmap for semiconductors (www.itrs2.net)). In this work we show that In0.75Ga0.25As quantum wells with a high mobility, 15 000 to 20 000 cm2 V-1 s-1 at ambient temperature, show an InAs-like phonon with an energy of 28.8 meV, frequency of 232 cm-1 that dominates the polar-optical mode scattering from  ˜70 K to 300 K. The measured optical phonon frequency is insensitive to the carrier density modulated with a surface gate or LED illumination. We model the electron scattering mechanisms as a function of temperature and identify mechanisms that limit the electron mobility in In0.75Ga0.25As quantum wells. Background impurity scattering starts to dominate for temperatures  <100 K. In the high mobility In0.75Ga0.25As quantum well, GaAs-like phonons do not couple to the electron gas unlike the case of In0.53Ga0.47As quantum wells.

Prediction of phonon-mediated superconductivity in hole-doped black phosphorus.

Science.gov (United States)

Feng, Yanqing; Sun, Hongyi; Sun, Junhui; Lu, Zhibin; You, Yong

2018-01-10

We study the conventional electron-phonon mediated superconducting properties of hole-doped black phosphorus by density functional calculations and get quite a large electron-phonon coupling (EPC) constant λ ~ 1.0 with transition temperature T C ~ 10 K, which is comparable to MgB 2 when holes are doped into the degenerate and nearly flat energy bands around the Fermi level. We predict that the softening of low-frequency [Formula: see text] optical mode and its phonon displacement, which breaks the lattice nonsymmorphic symmetry of gliding plane and lifts the band double degeneracy, lead to a large EPC. These factors are favorable for BCS superconductivity.

Prediction of phonon-mediated superconductivity in hole-doped black phosphorus

Science.gov (United States)

Feng, Yanqing; Sun, Hongyi; Sun, Junhui; Lu, Zhibin; You, Yong

2018-01-01

We study the conventional electron-phonon mediated superconducting properties of hole-doped black phosphorus by density functional calculations and get quite a large electron-phonon coupling (EPC) constant λ ~ 1.0 with transition temperature T C ~ 10 K, which is comparable to MgB2 when holes are doped into the degenerate and nearly flat energy bands around the Fermi level. We predict that the softening of low-frequency B3g1 optical mode and its phonon displacement, which breaks the lattice nonsymmorphic symmetry of gliding plane and lifts the band double degeneracy, lead to a large EPC. These factors are favorable for BCS superconductivity.

Phonon structures of GaN-based random semiconductor alloys

Science.gov (United States)

Zhou, Mei; Chen, Xiaobin; Li, Gang; Zheng, Fawei; Zhang, Ping

2017-12-01

Accurate modeling of thermal properties is strikingly important for developing next-generation electronics with high performance. Many thermal properties are closely related to phonon dispersions, such as sound velocity. However, random substituted semiconductor alloys AxB1-x usually lack translational symmetry, and simulation with periodic boundary conditions often requires large supercells, which makes phonon dispersion highly folded and hardly comparable with experimental results. Here, we adopt a large supercell with randomly distributed A and B atoms to investigate substitution effect on the phonon dispersions of semiconductor alloys systematically by using phonon unfolding method [F. Zheng, P. Zhang, Comput. Mater. Sci. 125, 218 (2016)]. The results reveal the extent to which phonon band characteristics in (In,Ga)N and Ga(N,P) are preserved or lost at different compositions and q points. Generally, most characteristics of phonon dispersions can be preserved with indium substitution of gallium in GaN, while substitution of nitrogen with phosphorus strongly perturbs the phonon dispersion of GaN, showing a rapid disintegration of the Bloch characteristics of optical modes and introducing localized impurity modes. In addition, the sound velocities of both (In,Ga)N and Ga(N,P) display a nearly linear behavior as a function of substitution compositions. Supplementary material in the form of one pdf file available from the Journal web page at http://https://doi.org/10.1140/epjb/e2017-80481-0.

Electronic and optical properties of ZrB{sub 12} and YB{sub 6}. Discussion on electron-phonon coupling

Energy Technology Data Exchange (ETDEWEB)

Teyssier, J.; Kuzmenko, A.; Marel, D. van der; Lortz, R.; Junod, A. [Departement de Physique de la Matiere Condensee, Universite de Geneve, Quai Ernest-Ansermet 24, 1211 Geneve 4 (Switzerland); Filippov, V.; Shitsevalova, N. [Institute for Problems of Materials Science NANU, Kiev (Ukraine)

2006-09-15

We report the optical properties of high-quality single crystals of low temperature superconductors zirconiumdodecaboride ZrB{sub 12} (T{sub c}=5.95 K) and yttrium hexaboride YB{sub 6} (T{sub c}=7.15 K) in the range 6 meV-4.6 eV at room temperature. The experimental optical conductivity was extracted from the analysis of the reflectivity in the infrared range and ellipsometry measurement of the dielectric function in the visible range. The electronic band structure of these compounds was calculated by the self-consistent full-potential LMTO method and used to compute the interband part of the optical conductivity and the plasma frequency {omega}{sub p}. A good agreement was observed between the interband part of the experimental optical conductivities and the band structure calculations. Different methods combining optical spectroscopy, resistivity, specific heat measurements and results of band structure calculations are used to determine the electron-phonon coupling constant. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Strain effects on the optical conductivity of gapped graphene in the presence of Holstein phonons beyond the Dirac cone approximation

Energy Technology Data Exchange (ETDEWEB)

Yarmohammadi, Mohsen, E-mail: m.yarmohammadi69@gmail.com [Young Researchers and Elite Club, Kermanshah Branch, Islamic Azad University, Kermanshah (Iran, Islamic Republic of)

2016-08-15

In this paper we study the optical conductivity and density of states (DOS) of doped gapped graphene beyond the Dirac cone approximation in the presence of electron-phonon (e-ph) interaction under strain, i.e., within the framework of a full π-band Holstein model, by using the Kubo linear response formalism that is established upon the retarded self-energy. A new peak in the optical conductivity for a large enough e-ph interaction strength is found which is associated to transitions between the midgap states and the Van Hove singularities of the main π-band. Optical conductivity decreases with strain and at large strains, the system has a zero optical conductivity at low energies due to optically inter-band excitations through the limit of zero doping. As a result, the Drude weight changes with e-ph interaction, temperature and strain. Consequently, DOS and optical conductivity remains stable with temperature at low e-ph coupling strengths.

Phonon thermal transport through tilt grain boundaries in strontium titanate

Energy Technology Data Exchange (ETDEWEB)

Zheng, Zexi; Chen, Xiang; Yang, Shengfeng; Xiong, Liming; Chen, Youping [Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611 (United States); Deng, Bowen; Chernatynskiy, Aleksandr [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)

2014-08-21

In this work, we perform nonequilibrium molecular dynamics simulations to study phonon scattering at two tilt grain boundaries (GBs) in SrTiO{sub 3}. Mode-wise energy transmission coefficients are obtained based on phonon wave-packet dynamics simulations. The Kapitza conductance is then quantified using a lattice dynamics approach. The obtained results of the Kapitza conductance of both GBs compare well with those obtained by the direct method, except for the temperature dependence. Contrary to common belief, the results of this work show that the optical modes in SrTiO{sub 3} contribute significantly to phonon thermal transport, accounting for over 50% of the Kapitza conductance. To understand the effect of the GB structural disorder on phonon transport, we compare the local phonon density of states of the atoms in the GB region with that in the single crystalline grain region. Our results show that the excess vibrational modes introduced by the structural disorder do not have a significant effect on phonon scattering at the GBs, but the absence of certain modes in the GB region appears to be responsible for phonon reflections at GBs. This work has also demonstrated phonon mode conversion and simultaneous generation of new modes. Some of the new modes have the same frequency as the initial wave packet, while some have the same wave vector but lower frequencies.

Phonon thermal transport through tilt grain boundaries in strontium titanate

International Nuclear Information System (INIS)

Zheng, Zexi; Chen, Xiang; Yang, Shengfeng; Xiong, Liming; Chen, Youping; Deng, Bowen; Chernatynskiy, Aleksandr

2014-01-01

In this work, we perform nonequilibrium molecular dynamics simulations to study phonon scattering at two tilt grain boundaries (GBs) in SrTiO 3 . Mode-wise energy transmission coefficients are obtained based on phonon wave-packet dynamics simulations. The Kapitza conductance is then quantified using a lattice dynamics approach. The obtained results of the Kapitza conductance of both GBs compare well with those obtained by the direct method, except for the temperature dependence. Contrary to common belief, the results of this work show that the optical modes in SrTiO 3 contribute significantly to phonon thermal transport, accounting for over 50% of the Kapitza conductance. To understand the effect of the GB structural disorder on phonon transport, we compare the local phonon density of states of the atoms in the GB region with that in the single crystalline grain region. Our results show that the excess vibrational modes introduced by the structural disorder do not have a significant effect on phonon scattering at the GBs, but the absence of certain modes in the GB region appears to be responsible for phonon reflections at GBs. This work has also demonstrated phonon mode conversion and simultaneous generation of new modes. Some of the new modes have the same frequency as the initial wave packet, while some have the same wave vector but lower frequencies

Magnon Broadening Effect by Magnon-Phonon Interaction in Colossal Magnetoresistance Manganites

OpenAIRE

Furukawa, Nobuo

1999-01-01

In order to study the magnetic excitation behaviors in colossal magnetoresistance manganites, a magnon-phonon interacting system is investigated. Sudden broadening of magnon linewidth is obtained when a magnon branch crosses over an optical phonon branch. Onset of the broadening is approximately determined by the magnon density of states. Anomalous magnon damping at the brillouine zone boundary observed in low Curie temperature manganites is explained.

Preface: Phonons 2007

Science.gov (United States)

Perrin, Bernard

2007-06-01

logo.jpg" ALT="Conference logo"/> The conference PHONONS 2007 was held 15-20 July 2007 in the Conservatoire National des Arts et Métiers (CNAM) Paris, France. CNAM is a college of higher technology for training students in the application of science to industry, founded by Henri Grégoire in 1794. This was the 12th International Conference on Phonon Scattering in Condensed Matter. This international conference series, held every 3 years, started in France at Sainte-Maxime in 1972. It was then followed by meetings at Nottingham (1975), Providence (1979), Stuttgart (1983), Urbana-Champaign (1986), Heidelberg (1989), Ithaca (1992), Sapporo (1995), Lancaster (1998), Dartmouth (2001) and St Petersburg (2004). PHONONS 2007 was attended by 346 delegates from 37 different countries as follows: France 120, Japan 45, Germany 25, USA 25, Russia 21, Italy 13, Poland 9, UK 9, Canada 7, The Netherlands 7, Finland 6, Spain 6, Taiwan 6, Greece 4, India 4, Israel 4, Ukraine 4, Serbia 3, South Africa 3, Argentina 2, Belgium 2, China 2, Iran 2, Korea 2, Romania 2, Switzerland 2, and one each from Belarus, Bosnia-Herzegovina, Brazil, Bulgaria, Egypt, Estonia, Mexico, Moldova, Morocco, Saudi Arabia, Turkey. There were 5 plenary lectures, 14 invited talks and 84 oral contributions; 225 posters were presented during three poster sessions. The first plenary lecture was given by H J Maris who presented fascinating movies featuring the motion of a single electron in liquid helium. Robert Blick gave us a review on the new possibilities afforded by nanotechnology to design nano-electomechanical systems (NEMS) and the way to use them to study elementary and fundamental processes. The growing interest for phonon transport studies in nanostructured materials was demonstrated by Arun Majumdar. Andrey Akimov described how ultrafast acoustic solitons can monitor the optical properties of quantum wells. Finally, Maurice Chapellier told us how phonons can help tracking dark matter. These 328

Evidence for phonon-mediated coupling in superconducting Ba0.6K0.4BiO3

International Nuclear Information System (INIS)

Hinks, D.G.; Dabrowski, B.; Richards, D.R.; Jorgensen, J.D.; Pei, S.; Zasadzinski, J.F.

1989-01-01

Superconducting Ba 0.6 K 0.4 BiO 3 , with a T c of 30 K, shows a large 18 O isotope effect which indicates that phonons are involved in the pairing mechanism. Infrared reflectivity measurements indicate a value for the superconducting gap consistent with moderate coupling (2Δ/k T c = 3.5 ± 0.5). A mediating energy for pairing of about 40 meV would be required to obtain a T c of 30 K. Strong coupling of electrons by optical phonons (which are present in this material with energies up to 80 meV) could account for the observed transition temperature. Recent tunneling spectroscopy shows the presence of strongly coupled optical phonons in the 40 to 70 meV region, indicating that superconductivity in this material may be phonon mediated

Microscopic theory of multiple-phonon-mediated dephasing and relaxation of quantum dots near a photonic band gap

Science.gov (United States)

Roy, Chiranjeeb; John, Sajeev

2010-02-01

We derive a quantum theory of the role of acoustic and optical phonons in modifying the optical absorption line shape, polarization dynamics, and population dynamics of a two-level atom (quantum dot) in the “colored” electromagnetic vacuum of a photonic band-gap (PBG) material. This is based on a microscopic Hamiltonian describing both radiative and vibrational processes quantum mechanically. We elucidate the extent to which phonon-assisted decay limits the lifetime of a single photon-atom bound state and derive the modified spontaneous emission dynamics due to coupling to various phonon baths. We demonstrate that coherent interaction with undamped phonons can lead to an enhanced lifetime of a photon-atom bound state in a PBG. This results in reduction of the steady-state atomic polarization but an increase in the fractionalized upper state population in the photon-atom bound state. We demonstrate, on the other hand, that the lifetime of the photon-atom bound state in a PBG is limited by the lifetime of phonons due to lattice anharmonicities (breakup of phonons into lower energy phonons) and purely nonradiative decay. We also derive the modified polarization decay and dephasing rates in the presence of such damping. This leads to a microscopic, quantum theory of the optical absorption line shapes. Our model and formalism provide a starting point for describing dephasing and relaxation in the presence of external coherent fields and multiple quantum dot interactions in electromagnetic reservoirs with radiative memory effects.

Microscopic theory of multiple-phonon-mediated dephasing and relaxation of quantum dots near a photonic band gap

International Nuclear Information System (INIS)

Roy, Chiranjeeb; John, Sajeev

2010-01-01

We derive a quantum theory of the role of acoustic and optical phonons in modifying the optical absorption line shape, polarization dynamics, and population dynamics of a two-level atom (quantum dot) in the ''colored'' electromagnetic vacuum of a photonic band-gap (PBG) material. This is based on a microscopic Hamiltonian describing both radiative and vibrational processes quantum mechanically. We elucidate the extent to which phonon-assisted decay limits the lifetime of a single photon-atom bound state and derive the modified spontaneous emission dynamics due to coupling to various phonon baths. We demonstrate that coherent interaction with undamped phonons can lead to an enhanced lifetime of a photon-atom bound state in a PBG. This results in reduction of the steady-state atomic polarization but an increase in the fractionalized upper state population in the photon-atom bound state. We demonstrate, on the other hand, that the lifetime of the photon-atom bound state in a PBG is limited by the lifetime of phonons due to lattice anharmonicities (breakup of phonons into lower energy phonons) and purely nonradiative decay. We also derive the modified polarization decay and dephasing rates in the presence of such damping. This leads to a microscopic, quantum theory of the optical absorption line shapes. Our model and formalism provide a starting point for describing dephasing and relaxation in the presence of external coherent fields and multiple quantum dot interactions in electromagnetic reservoirs with radiative memory effects.

Phonon induced optical gain in a current carrying two-level quantum dot

Energy Technology Data Exchange (ETDEWEB)

Eskandari-asl, Amir, E-mail: amir.eskandari.asl@gmail.com [Department of Physics, Shahid Beheshti University, G.C. Evin, Tehran 1983963113 (Iran, Islamic Republic of); School of Nano Science, Institute for Research in Fundamental Sciences (IPM), P.O. Box: 19395-5531, Tehran, Iran (Iran, Islamic Republic of)

2017-05-15

In this work we consider a current carrying two level quantum dot (QD) that is coupled to a single mode phonon bath. Using self-consistent Hartree-Fock approximation, we obtain the I-V curve of QD. By considering the linear response of our system to an incoming classical light, we see that depending on the parametric regime, the system could have weak or strong light absorption or may even show lasing. This lasing occurs at high enough bias voltages and is explained by a population inversion considering side bands, while the total electron population in the higher level is less than the lower one. The frequency at which we have the most significant lasing depends on the level spacing and phonon frequency and not on the electron-phonon coupling strength.

Phonon Routing in Integrated Optomechanical Cavity-waveguide Systems

Science.gov (United States)

2015-08-20

cavity (bottom beam of Fig. 1b), allowing for evanescent cou- pling of laser light into and out of the cavity. A single optical fiber taper is used to...couple light into the on- chip coupling waveguide, and a photonic crystal mirror is etched in to the end of the optical coupling waveguide so that light...coupled into the nanobeam cavity can be recollected by the optical fiber taper as per Ref. [36]. Figure 1c shows the band structure of the phonon

Detecting the phonon spin in magnon-phonon conversion experiments

Science.gov (United States)

Holanda, J.; Maior, D. S.; Azevedo, A.; Rezende, S. M.

2018-05-01

Recent advances in the emerging field of magnon spintronics have stimulated renewed interest in phenomena involving the interaction between spin waves, the collective excitations of spins in magnetic materials that quantize as magnons, and the elastic waves that arise from excitations in the crystal lattice, which quantize as phonons. In magnetic insulators, owing to the magnetostrictive properties of materials, spin waves can become strongly coupled to elastic waves, forming magnetoelastic waves—a hybridized magnon-phonon excitation. While several aspects of this interaction have been subject to recent scrutiny, it remains unclear whether or not phonons can carry spin. Here we report experiments on a film of the ferrimagnetic insulator yttrium iron garnet under a non-uniform magnetic field demonstrating the conversion of coherent magnons generated by a microwave field into phonons that have spin. While it is well established that photons in circularly polarized light carry a spin, the spin of phonons has had little attention in the literature. By means of wavevector-resolved Brillouin light-scattering measurements, we show that the magnon-phonon conversion occurs with constant energy and varying linear momentum, and that the light scattered by the phonons is circularly polarized, thus demonstrating that the phonons have spin.

The Electron-Phonon Interaction in Strongly Correlated Systems

International Nuclear Information System (INIS)

Castellani, C.; Grilli, M.

1995-01-01

We analyze the effect of strong electron-electron repulsion on the electron-phonon interaction from a Fermi-liquid point of view and show that the electron-electron interaction is responsible for vertex corrections, which generically lead to a strong suppression of the electron-phonon coupling in the v F q/ω >>1 region, while such effect is not present when v F q/ω F is the Fermi velocity and q and ω are the transferred momentum and frequency respectively. In particular the e-ph scattering is suppressed in transport properties which are dominated by low-energy-high-momentum processes. On the other hand, analyzing the stability criterion for the compressibility, which involves the effective interactions in the dynamical limit, we show that a sizable electron-phonon interaction can push the system towards a phase-separation instability. Finally a detailed analysis of these ideas is carried out using a slave-boson approach for the infinite-U three-band Hubbard model in the presence of a coupling between the local hole density and a dispersionless optical phonon. (author)

Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion

Science.gov (United States)

Williams, Benjamin S. (Inventor); Hu, Qing (Inventor)

2009-01-01

The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.

Surface defects characterization in a quantum wire by coherent phonons scattering

Energy Technology Data Exchange (ETDEWEB)

Rabia, M. S. [Laboratoire de Mécanique des Structures et Energétique, Faculté du Génie de la Construction, Université. Mammeri de Tizi-Ouzou, BP 17 RP Hasnaoua II, Tizi-Ouzou 15000, Algérie m2msr@yahoo.fr (Algeria)

2015-03-30

The influence of surface defects on the scattering properties of elastic waves in a quasi-planar crystallographic waveguide is studied in the harmonic approximation using the matching method formalism. The structural model is based on three infinite atomic chains forming a perfect lattice surmounted by an atomic surface defect. Following the Landauer approach, we solve directly the Newton dynamical equation with scattering boundary conditions and taking into account the next nearest neighbour’s interaction. A detailed study of the defect-induced fluctuations in the transmission spectra is presented for different adatom masses. As in the electronic case, the presence of localized defect-induced states leads to Fano-like resonances. In the language of mechanical vibrations, these are called continuum resonances. Numerical results reveal the intimate relation between transmission spectra and localized defect states and provide a basis for the understanding of conductance spectroscopy experiments in disordered mesoscopic systems. The results could be useful for the design of phononic devices.

Surface defects characterization in a quantum wire by coherent phonons scattering

International Nuclear Information System (INIS)

Rabia, M. S.

2015-01-01

The influence of surface defects on the scattering properties of elastic waves in a quasi-planar crystallographic waveguide is studied in the harmonic approximation using the matching method formalism. The structural model is based on three infinite atomic chains forming a perfect lattice surmounted by an atomic surface defect. Following the Landauer approach, we solve directly the Newton dynamical equation with scattering boundary conditions and taking into account the next nearest neighbour’s interaction. A detailed study of the defect-induced fluctuations in the transmission spectra is presented for different adatom masses. As in the electronic case, the presence of localized defect-induced states leads to Fano-like resonances. In the language of mechanical vibrations, these are called continuum resonances. Numerical results reveal the intimate relation between transmission spectra and localized defect states and provide a basis for the understanding of conductance spectroscopy experiments in disordered mesoscopic systems. The results could be useful for the design of phononic devices

Effects of strain on phonon interactions and phase nucleation in several semiconductor and nano particle systems

Science.gov (United States)

Tallman, Robert E.

Raman scattering is utilized to explore the effects of applied pressure and strain on anharmonic phonon interactions and nucleation of structural transitions in several bulk and nanoparticle semiconductor systems. The systems investigated are bulk ZnS and ZnSe in several isotopic compositions, InP/CdS core/shell nanoparticles exhibiting confined and surface optical Raman modes, and amorphous selenium films undergoing photo-induced crystallization. The anharmonic decay of long-wavelength optical modes into two-phonon acoustic combinations modes is studied in 64Zn32S, 64Zn34S, natZnatS bulk crystals by measuring the TO(Gamma) Raman line-shape as a function of applied hydrostatic pressure. The experiments are carried out at room temperature and 16K for pressures up to 150 kbars using diamond-anvil cells. The most striking effects occur in 68Zn32S where the TO(Gamma) peak narrows by a factor of 10 and increases in intensity at pressures for which the TO(Gamma) frequency has been tuned into a gap in the two-phonon density of states (DOS). In all the isotopic compositions, the observed phonon decay processes can be adequately explained by a second order perturbation treatment of the anharmonic coupling between TO(Gamma) and TA + LA combinations at various critical points, combined with an adiabatic bond-charge model for the phonon DOS and the known mode Gruneisen parameters. Bulk ZnSe crystals exhibit very different behavior. Here we find that anharmonic decay alone can not explain the excessive (˜ 60 cm-1 ) broadening in the TO(Gamma) Raman peak observed as the pressure approaches to within 50kbar of the ZB -> B1 phase transition (at P ˜ 137 kbar). Rather the broadening appears to arise from antecedent nucleation of structural changes within nanoscopic domains, with the mechanism for line-shape changes being mode mixing via localization and disorder instead of anharmonicity. To sort out these contributions, pressure experiments on natural ZnSe and on isotopically pure

Froehlih coupling with LO-phonons in quantum dots. Huang-Rhys phenomena

International Nuclear Information System (INIS)

Banyai, L.

1991-01-01

The quantum coupling between photoexcited carriers and longitudinal optical (LO) phonons in zero-dimensional structures (quantum dots) is considered. A classical model of the electron-phonon interaction is presented. The polarization field is then quantized and the Huang-Rhys phenomenon is observed. Effects induced by the quantization of the electron system are also considered. Finally, the modifications of the theory due to specific aspects of quantum dots are discussed. (Author)

Absence of phase-dependent noise in time-domain reflectivity studies of impulsively excited phonons

KAUST Repository

Hussain, A.

2010-06-17

There have been several reports of phase-dependent noise in time-domain reflectivity studies of optical phonons excited by femtosecond laser pulses in semiconductors, semimetals, and superconductors. It was suggested that such behavior is associated with the creation of squeezed phonon states although there is no theoretical model that directly supports such a proposal. We have experimentally re-examined the studies of phonons in bismuth and gallium arsenide, and find no evidence of any phase-dependent noise signature associated with the phonons. We place an upper limit on any such noise at least 40–50 dB lower than previously reported.

Absence of phase-dependent noise in time-domain reflectivity studies of impulsively excited phonons

KAUST Repository

Hussain, A.; Andrews, S. R.

2010-01-01

There have been several reports of phase-dependent noise in time-domain reflectivity studies of optical phonons excited by femtosecond laser pulses in semiconductors, semimetals, and superconductors. It was suggested that such behavior is associated with the creation of squeezed phonon states although there is no theoretical model that directly supports such a proposal. We have experimentally re-examined the studies of phonons in bismuth and gallium arsenide, and find no evidence of any phase-dependent noise signature associated with the phonons. We place an upper limit on any such noise at least 40–50 dB lower than previously reported.

3D continuum phonon model for group-IV 2D materials

KAUST Repository

Willatzen, Morten

2017-06-30

A general three-dimensional continuum model of phonons in two-dimensional materials is developed. Our first-principles derivation includes full consideration of the lattice anisotropy and flexural modes perpendicular to the layers and can thus be applied to any two-dimensional material. In this paper, we use the model to not only compare the phonon spectra among the group-IV materials but also to study whether these phonons differ from those of a compound material such as molybdenum disulfide. The origin of quadratic modes is clarified. Mode coupling for both graphene and silicene is obtained, contrary to previous works. Our model allows us to predict the existence of confined optical phonon modes for the group-IV materials but not for molybdenum disulfide. A comparison of the long-wavelength modes to density-functional results is included.

Phonon-assisted damping of plasmons in three- and two-dimensional metals

Science.gov (United States)

Caruso, Fabio; Novko, Dino; Draxl, Claudia

2018-05-01

We investigate the effects of crystal lattice vibrations on the dispersion of plasmons. The loss function of the homogeneous electron gas (HEG) in two and three dimensions is evaluated numerically in the presence of electronic coupling to an optical phonon mode. Our calculations are based on many-body perturbation theory for the dielectric function as formulated by the Hedin-Baym equations in the Fan-Migdal approximation. The coupling to phonons broadens the spectral signatures of plasmons in the electron-energy loss spectrum (EELS) and it induces the decay of plasmons on timescales shorter than 1 ps. Our results further reveal the formation of a kink in the plasmon dispersion of the two-dimensional HEG, which marks the onset of plasmon-phonon scattering. Overall, these features constitute a fingerprint of plasmon-phonon coupling in EELS of simple metals. It is shown that these effects may be accounted for by resorting to a simplified treatment of the electron-phonon interaction which is amenable to first-principles calculations.

Phonon-assisted optical bands of nanosized powdery SrAl{sub 2}O{sub 4}:Eu{sup 2+} crystals: Evidence of a multimode Pekarian

Energy Technology Data Exchange (ETDEWEB)

Nazarov, M. [School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Pulau Pinang (Malaysia); Institute of Applied Physics, Academiei Street 5, Chisinau MD-2028 (Moldova, Republic of); Brik, M.G. [Institute of Physics, University of Tartu, Riia 142, Tartu 51014 (Estonia); Spassky, D. [Institute of Physics, University of Tartu, Riia 142, Tartu 51014 (Estonia); Skobeltsyn Institute of Nuclear Physics, M.V. Lomonosov Moscow State University, 119991 Moscow (Russian Federation); Tsukerblat, B., E-mail: tsuker@bgu.ac.il [Department of Chemistry, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel); Palii, A. [Institute of Applied Physics, Academiei Street 5, Chisinau MD-2028 (Moldova, Republic of); Nazida, A. Nor [School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Pulau Pinang (Malaysia); Faculty of Art and Design, Universiti Teknologi MARA (Perak), Seri Iskandar 32610, Bandar Baru Seri Iskandar, Perak (Malaysia); Ahmad-Fauzi, M.N. [School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Pulau Pinang (Malaysia)

2013-12-09

A stoichiometric powder composed of nanosized grains of SrAl{sub 2}O{sub 4}:Eu{sup 2+} was synthesized by combustion method at 500 °C with the subsequent calcination at 1000 °C. The zero-phonon line position, parameter of the Stokes shift, heat release factor and effective phonon energy were studied experimentally and analyzed in the framework of the multimode Pekar–Huang–Rhys model. Experimental data show that the optical 4f–5d transitions in Eu{sup 2+} ion exhibit a broad asymmetric electron–vibrational bands with a pronounced structure near the maxima. The form-function of the absorption and luminescence bands are theoretically analyzed in the framework of the model of the linear electron–vibrational interaction assuming strong coupling with the local vibration (estimated Pekar–Huang–Rhys parameter a=2S=10 and frequency ℏω=509 cm{sup −1}) and relatively weak interaction with the crystal phonons. The last results in an effective temperature dependent broadening of the discrete lines corresponding to the local vibrations and to a specific shape of the whole phonon assisted band (multimode Pekarian). Providing specific interrelation between the key parameters the calculated absorption and luminescence bands exhibit peculiar temperature dependent structured peaks in a qualitative agreement with the experimental data.

Quantum theory of phonon-mediated decoherence and relaxation of two-level systems in a structured electromagnetic reservoir

Science.gov (United States)

Roy, Chiranjeeb

In this thesis we study the role of nonradiative degrees of freedom on quantum optical properties of mesoscopic quantum dots placed in the structured electromagnetic reservoir of a photonic crystal. We derive a quantum theory of the role of acoustic and optical phonons in modifying the optical absorption lineshape, polarization dynamics, and population dynamics of a two-level atom (quantum dot) in the "colored" electromagnetic vacuum of a photonic band gap (PBG) material. This is based on a microscopic Hamiltonian describing both radiative and vibrational processes quantum mechanically. Phonon sidebands in an ordinary electromagnetic reservoir are recaptured in a simple model of optical phonons using a mean-field factorization of the atomic and lattice displacement operators. Our formalism is then used to treat the non-Markovian dynamics of the same system within the structured electromagnetic density of states of a photonic crystal. We elucidate the extent to which phonon-assisted decay limits the lifetime of a single photon-atom bound state and derive the modified spontaneous emission dynamics due to coupling to various phonon baths. We demonstrate that coherent interaction with undamped phonons can lead to enhanced lifetime of a photon-atom bound state in a PBG by (i) dephasing and reducing the transition electric dipole moment of the atom and (ii) reducing the quantum mechanical overlap of the state vectors of the excited and ground state (polaronic shift). This results in reduction of the steady-state atomic polarization but an increase in the fractionalized upper state population in the photon-atom bound state. We demonstrate, on the other hand, that the lifetime of the photon-atom bound state in a PBG is limited by the lifetime of phonons due to lattice anharmonicities (break-up of phonons into lower energy phonons) and purely nonradiative decay. We demonstrate how these additional damping effects limit the extent of the polaronic (Franck-Condon) shift of

Phonon dynamics and Urbach energy studies of MgZnO alloys

Energy Technology Data Exchange (ETDEWEB)

Huso, Jesse, E-mail: jhuso@vandals.uidaho.edu; Che, Hui; Thapa, Dinesh; Canul, Amrah; Bergman, Leah [Department of Physics, University of Idaho, Moscow, Idaho 83844-0903 (United States); McCluskey, M. D. [Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814 (United States)

2015-03-28

The Mg{sub x}Zn{sub 1−x}O alloy system is emerging as an environmentally friendly choice in ultraviolet lighting and sensor technologies. Knowledge of defects which impact their optical and material properties is a key issue for utilization of these alloys in various technologies. The impact of phase segregation, structural imperfections, and alloy inhomogeneities on the phonon dynamics and electronic states of Mg{sub x}Zn{sub 1−x}O thin films were studied via selective resonant Raman scattering (SRRS) and Urbach analyses, respectively. A series of samples with Mg composition from 0–68% were grown using a sputtering technique, and the optical gaps were found to span a wide UV range of 3.2–5.8 eV. The extent of the inherent phase segregation was determined via SRRS using two UV-laser lines to achieve resonance with the differing optical gaps of the embedded cubic and wurtzite structural domains. The occurrence of Raman scattering from cubic structures is discussed in terms of relaxation of the selection rules due to symmetry breaking by atomic substitutions. The Raman linewidth and Urbach energy behavior indicate the phase segregation region occurs in the range of 47–66% Mg. Below the phase segregation, the longitudinal optical phonons are found to follow the model of one-mode behavior. The phonon decay model of Balkanski et al. indicates that the major contributor to Raman linewidth arises from the temperature-independent term attributed to structural defects and alloy inhomogeneity, while the contribution from anharmonic decay is relatively small. Moreover, a good correlation between Urbach energy and Raman linewidth was found, implying that the underlying crystal dynamics affecting the phonons also affect the electronic states. Furthermore, for alloys with low Mg composition structural defects are dominant in determining the alloy properties, while at higher compositions alloy inhomogeneity cannot be neglected.

Raman analysis of phonon modes in a short period AlN/GaN superlattice

Science.gov (United States)

Sarkar, Ketaki; Datta, Debopam; Gosztola, David J.; Shi, Fengyuan; Nicholls, Alan; Stroscio, Michael A.; Dutta, Mitra

2018-03-01

AlN/GaN-based optoelectronic devices have been the subject of intense research underlying the commercialization of efficient devices. Areas of considerable interest are the study of their lattice dynamics, phonon transport, and electron-phonon interactions specific to the interface of these heterostructures which results in additional optical phonon modes known as interface phonon modes. In this study, the framework of the dielectric continuum model (DCM) has been used to compare and analyze the optical phonon modes obtained from experimental Raman scattering measurements on AlN/GaN short-period superlattices. We have observed the localized E2(high), A1(LO) and the E1(TO) modes in superlattice measurements at frequencies shifted from their bulk values. To the best of our knowledge, the nanostructures used in these studies are among the smallest yielding useful Raman signatures for the interface modes. In addition, we have also identified an additional spread of interface phonon modes in the TO range resulting from the superlattice periodicity. The Raman signature contribution from the underlying AlxGa1-xN ternary has also been observed and analyzed. A temperature calibration was done based on Stokes/anti-Stokes ratio of A1(LO) using Raman spectroscopy in a broad operating temperature range. Good agreement between the experimental results and theoretically calculated calibration plot predicted using Bose-Einstein statistics was obtained.

INTRODUCTION: Surface Dynamics, Phonons, Adsorbate Vibrations and Diffusion

Science.gov (United States)

Bruch, L. W.

2004-07-01

understanding of the underlying factors determining the optical quality of GaInNAs, such as composition, growth and annealing conditions. We are still far from establishing an understanding of the band structure and its dependence on composition. Fundamental electronic interactions such as electron-electron and electron-phonon scattering, dependence of effective mass on composition, strain and orientation, quantum confinement effects, effects of localized nitrogen states on high field transport and on galvanometric properties, and mechanisms for light emission in these materials, are yet to be fully understood. Nature and formation mechanisms of grown-in and processing-induced defects that are important for material quality and device performance are still unknown. Such knowledge is required in order to design strategies to efficiently control and eliminate harmful defects. For many potential applications (such as solar cells, HBTs) it is essential to get more information on the transport properties of dilute nitride materials. The mobility of minority carriers is known to be low in GaInNAs and related material. The experimental values are far from reaching the theoretical ones, due to defects and impurities introduced in the material during the growth. The role of the material inhomogeneities on the lateral carrier transport also needs further investigation. From the device's point of view most attention to date has been focused on the GaInNAs/GaAs system, mainly because of its potential for optoelectronic devices covering the 1.3-1.55 µm data and telecommunications wavelength bands. As is now widely appreciated, these GaAs-compatible structures allow monolithic integration of AlGaAs-based distributed Bragg reflector mirrors (DBRs) for vertical cavity surface-emitting lasers with low temperature sensitivity and compatibility with AlOx-based confinement techniques. In terms of conventional edge-emitting lasers (EELs), the next step is to extend the wavelength range for cw room

Unraveling the interlayer-related phonon self-energy renormalization in bilayer graphene.

Science.gov (United States)

Araujo, Paulo T; Mafra, Daniela L; Sato, Kentaro; Saito, Riichiro; Kong, Jing; Dresselhaus, Mildred S

2012-01-01

In this letter, we present a step towards understanding the bilayer graphene (2LG) interlayer (IL)-related phonon combination modes and overtones as well as their phonon self-energy renormalizations by using both gate-modulated and laser-energy dependent inelastic scattering spectroscopy. We show that although the IL interactions are weak, their respective phonon renormalization response is significant. Particularly special, the IL interactions are mediated by Van der Waals forces and are fundamental for understanding low-energy phenomena such as transport and infrared optics. Our approach opens up a new route to understanding fundamental properties of IL interactions which can be extended to any graphene-like material, such as MoS₂, WSe₂, oxides and hydroxides. Furthermore, we report a previously elusive crossing between IL-related phonon combination modes in 2LG, which might have important technological applications.

The directional propagation characteristics of elastic wave in two-dimensional thin plate phononic crystals

International Nuclear Information System (INIS)

Wen Jihong; Yu, Dianlong; Wang Gang; Zhao Honggang; Liu Yaozong; Wen Xisen

2007-01-01

The directional propagation characteristics of elastic wave during pass bands in two-dimensional thin plate phononic crystals are analyzed by using the lumped-mass method to yield the phase constant surface. The directions and regions of wave propagation in phononic crystals for certain frequencies during pass bands are predicted with the iso-frequency contour lines of the phase constant surface, which are then validated with the harmonic responses of a finite two-dimensional thin plate phononic crystals with 16x16 unit cells. These results are useful for controlling the wave propagation in the pass bands of phononic crystals

Effect of magnon-phonon interaction on transverse acoustic phonon excitation at finite temperature

International Nuclear Information System (INIS)

Cheng Taimin; Li Lin; Xianyu Ze

2007-01-01

A magnon-phonon interaction model is developed on the basis of two-dimensional square Heisenberg ferromagnetic system. By using Matsubara Green function theory transverse acoustic phonon excitation is studied and transverse acoustic phonon excitation dispersion curves is calculated on the main symmetric point and line in the first Brillouin zone. On line Σ it is found that there is hardening for transverse acoustic phonon on small wave vector zone (nearby point Γ), there is softening for transverse acoustic phonon on the softening zone and there is hardening for transverse acoustic phonon near point M. On line Δ it is found there is no softening and hardening for transverse acoustic phonon. On line Z it is found that there is softening for transverse acoustic phonon on small wave vector zone (nearby point X) and there is hardening for transverse acoustic phonon nearby point M. The influences of various parameters on transverse acoustic phonon excitation are also explored and it is found that the coupling of the magnon-phonon and the spin wave stiffness constant play an important role for the softening of transverse acoustic phonon

Nonlinear optical diagnostic of semimagnetic semiconductors Pb1-xYb xX (X = S, Se, Te)

International Nuclear Information System (INIS)

Nouneh, K.; Kityk, I.V.; Viennois, R.; Benet, S.; Charar, S.; Plucinski, K.J.

2007-01-01

Nonlinear optical measurements were performed to elucidate the influence of magnetic ions on the behavior of charge carriers in magnetic semiconductors-Pb 1-x Yb x X (X = S, Se, Te at x = 1-3%). It was shown that nonlinear optical methods could be used as sensitive tools for investigations of electron-phonon anharmonicity near low-temperature semiconductor-insulator phase transitions. There exists a difference between surface and bulk-like contributions to the nonlinear optical effects. It was shown that only low-temperature Two Photon Absorption (TPA) oscillator may be related to the number of the electron-phonon anharmonic modes responsible for the observed phase transformation. The explanation of the anomalous temperature dependences is given in accordance with dipole momentum's behaviors determined by low-temperature spin-spin interactions and by electron-phonon anharmonic interactions. We have discovered that low-temperature dependence of specific heat of Pb 1-x R x Te (R = Yb, Pr with x = 3% and 1.6%, respectively) exhibits a non-magnetic order caused by large electron-phonon contributions and structural disorder effects

Effect of interface/surface stress on the elastic wave band structure of two-dimensional phononic crystals

International Nuclear Information System (INIS)

Liu, Wei; Chen, Jiwei; Liu, Yongquan; Su, Xianyue

2012-01-01

In the present Letter, the multiple scattering theory (MST) for calculating the elastic wave band structure of two-dimensional phononic crystals (PCs) is extended to include the interface/surface stress effect at the nanoscale. The interface/surface elasticity theory is employed to describe the nonclassical boundary conditions at the interface/surface and the elastic Mie scattering matrix embodying the interface/surface stress effect is derived. Using this extended MST, the authors investigate the interface/surface stress effect on the elastic wave band structure of two-dimensional PCs, which is demonstrated to be significant when the characteristic size reduces to nanometers. -- Highlights: ► Multiple scattering theory including the interface/surface stress effect. ► Interface/surface elasticity theory to describe the nonclassical boundary conditions. ► Elastic Mie scattering matrix embodying the interface/surface stress effect. ► Interface/surface stress effect would be significant at the nanoscale.

Nonlocal electron-phonon coupling in the pentacene crystal: Beyond the Γ-point approximation

KAUST Repository

Yi, Yuanping

2012-01-01

There is currently increasing interest in understanding the impact of the nonlocal (Peierls-type) electron-phonon mechanism on charge transport in organic molecular semiconductors. Most estimates of the non-local coupling constants reported in the literature are based on the Γ-point phonon modes. Here, the influence of phonon modes spanning the entire Brillouin zone (phonon dispersion) on the nonlocal electron-phonon couplings is investigated for the pentacene crystal. The phonon modes are obtained by using a supercell approach. The results underline that the overall nonlocal couplings are substantially underestimated by calculations taking sole account of the phonons at the Γ point of the unit cell. The variance of the transfer integrals based on Γ-point normal-mode calculations at room temperature is underestimated in some cases by 40% for herringbone-type dimers and by over 80% for cofacial dimers. Our calculations show that the overall coupling is somewhat larger for holes than for electrons. The results also suggest that the interactions of charge carriers (both electrons and holes) with acoustic and optical phonons are comparable. Therefore, an adequate description of the charge-transport properties in pentacene and similar systems requires that these two electron-phonon coupling mechanisms be treated on the same footing. © 2012 American Institute of Physics.

Long-Wavelength Phonon Scattering in Nonpolar Semiconductors

DEFF Research Database (Denmark)

Lawætz, Peter

1969-01-01

The long-wavelength acoustic- and optical-phonon scattering of carriers in nonpolar semiconductors is considered from a general point of view. The deformation-potential approximation is defined and it is shown that long-range electrostatic forces give a nontrivial correction to the scattering...... of the very-short-range nature of interactions in a covalent semiconductor....

Optical studies of high quality synthetic diamond

International Nuclear Information System (INIS)

Sharp, S.J.

1999-01-01

This thesis is concerned with the study of fundamental and defect induced optical properties of synthetic diamond grown using high pressure, high temperature (HPHT) synthesis or chemical vapour deposition (CVD). The primary technique used for investigation is cathodoluminescence (including imaging and decay-time measurements) in addition to other forms of optical spectroscopy. This thesis is timely in that the crystallinity and purity of synthetic diamond has increased ten fold over the last few years. The diamond exciton emission, which is easily quenched by the presence of defects, is studied in high quality samples in detail. In addition the ability now exists to engineer the isotopic content of synthetic diamond to a high degree of accuracy. The experimental chapters are divided as follows: Chapter 2: High resolution, low temperature spectra reveal a splitting of the free-exciton phonon recombination emission peaks and the bound-exciton zero phonon line. Included are measurements of the variation in intensity and decay-time as a function of temperature. Chapter 3: The shift in energy of the phonon-assisted free-exciton phonon replicas with isotopic content has been measured. The shift is in agreement with the results of interatomic force model for phonon scattering due to isotope disorder. Chapter 4: A study of the shift in energy with isotopic content of the diamond of the GR1 band due to the neutral vacancy has allowed a verification of the theoretical predictions due to the Jahn Teller effect. Chapter 5: The spatial distribution of the free-exciton luminescence is studied in HPHT synthetic and CVD diamond. A variation in intensity with distance from the surface is interpreted as a significant non-radiative loss of excitons to the surface. Chapter 6: The decay-times of all known self-interstitial related centres have been measured in order to calculate the concentration of these centres present in electron irradiated diamond. (author)

Surface morphology and electronic structure of halogen etched InAs (1 1 1)

Energy Technology Data Exchange (ETDEWEB)

Eassa, N., E-mail: nashwa.eassa@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Murape, D.M. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Betz, R. [Department of Chemistry, Nelson Mandela Metropolitan University (South Africa); Neethling, J.H.; Venter, A.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

2012-05-15

The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H{sub 2}O, Br-methanol and I-ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {l_brace}1 1 1{r_brace} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.

Surface morphology and electronic structure of halogen etched InAs (1 1 1)

International Nuclear Information System (INIS)

Eassa, N.; Murape, D.M.; Betz, R.; Neethling, J.H.; Venter, A.; Botha, J.R.

2012-01-01

The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H 2 O, Br–methanol and I–ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {1 1 1} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.

Phonon dispersion relations for caesium thiocyanate

International Nuclear Information System (INIS)

Irving, M.A.; Smith, T.F.; Elcombe, M.M.

1984-01-01

Room temperature phonon dispersion relations for frequencies below 2 THz have been measured, along the three orthorhombic axes and selected diagonal directions by neutron inelastic scattering, for caesium thiocyanate. These curves, which represent 13 acoustic modes and 11 optic modes of vibration, do not agree with the dispersion behaviour calculated from the rigid-ion model developed by Ti and Ra to describe their Raman scattering observations

Optical gain coefficients of silicon: a theoretical study

Science.gov (United States)

Tsai, Chin-Yi

2018-05-01

A theoretical model is presented and an explicit formula is derived for calculating the optical gain coefficients of indirect band-gap semiconductors. This model is based on the second-order time-dependent perturbation theory of quantum mechanics by incorporating all the eight processes of photon/phonon emission and absorption between the band edges of the conduction and valence bands. Numerical calculation results are given for Si. The calculated absorption coefficients agree well with the existing fitting formula of experiment data with two modes of phonons: optical phonons with energy of 57.73 meV and acoustic phonons with energy of 18.27 meV near (but not exactly at) the zone edge of the X-point in the dispersion relation of phonons. These closely match with existing data of 57.5 meV transverse optical (TO) phonons at the X4-point and 18.6 meV transverse acoustic (TA) phonons at the X3-point of the zone edge. The calculated results show that the material optical gain of Si will overcome free-carrier absorption if the energy separation of quasi-Fermi levels between electrons and holes exceeds 1.15 eV.

Phonon manipulation with phononic crystals.

Energy Technology Data Exchange (ETDEWEB)

Kim Bongsang; Hopkins, Patrick Edward; Leseman, Zayd C.; Goettler, Drew F.; Su, Mehmet F. (University of New Mexico, Albuquerque, NM); El-Kady, Ihab Fathy; Reinke, Charles M.; Olsson, Roy H., III

2012-01-01

In this work, we demonstrated engineered modification of propagation of thermal phonons, i.e. at THz frequencies, using phononic crystals. This work combined theoretical work at Sandia National Laboratories, the University of New Mexico, the University of Colorado Boulder, and Carnegie Mellon University; the MESA fabrication facilities at Sandia; and the microfabrication facilities at UNM to produce world-leading control of phonon propagation in silicon at frequencies up to 3 THz. These efforts culminated in a dramatic reduction in the thermal conductivity of silicon using phononic crystals by a factor of almost 30 as compared with the bulk value, and about 6 as compared with an unpatterned slab of the same thickness. This work represents a revolutionary advance in the engineering of thermoelectric materials for optimal, high-ZT performance. We have demonstrated the significant reduction of the thermal conductivity of silicon using phononic crystal structuring using MEMS-compatible fabrication techniques and in a planar platform that is amenable to integration with typical microelectronic systems. The measured reduction in thermal conductivity as compared to bulk silicon was about a factor of 20 in the cross-plane direction [26], and a factor of 6 in the in-plane direction. Since the electrical conductivity was only reduced by a corresponding factor of about 3 due to the removal of conductive material (i.e., porosity), and the Seebeck coefficient should remain constant as an intrinsic material property, this corresponds to an effective enhancement in ZT by a factor of 2. Given the number of papers in literature devoted to only a small, incremental change in ZT, the ability to boost the ZT of a material by a factor of 2 simply by reducing thermal conductivity is groundbreaking. The results in this work were obtained using silicon, a material that has benefitted from enormous interest in the microelectronics industry and that has a fairly large thermoelectric power

LA phonons scattering of surface electrons in Bi2Se3

International Nuclear Information System (INIS)

Huang, Lang-Tao; Zhu, Bang-Fen

2013-01-01

Within the Boltzmann equation formalism we evaluate the transport relaxation time of Dirac surface states (SSs) in the typical topological insulator(TI) Bi 2 Se 3 due to the phonon scattering. We find that although the back-scattering of the SSs in TIs is strictly forbidden, the in-plane scattering between SSs in 3-dimensional TIs is allowed, maximum around the right-angle scattering. Thus the topological property of the SSs only reduces the scattering rate to its one half approximately. Besides, the larger LA deformation potential and lower sound velocity of Bi 2 Se 3 enhance the scattering rate significantly. Compared with the Dirac electrons in graphene, we find the scattering rate of SSs in Bi 2 Se 3 are two orders of magnitudes larger, which agree with the recent transport experiments

Phonon effects on the radiative recombination of excitons in double quantum dots

Science.gov (United States)

Karwat, Paweł; Sitek, Anna; Machnikowski, Paweł

2011-11-01

We study theoretically the radiative recombination of excitons in double quantum dots in the presence of carrier-phonon coupling. We show that the phonon-induced pure dephasing effects and transitions between the exciton states strongly modify the spontaneous emission process and make it sensitive to temperature, which may lead to nonmonotonic temperature dependence of the time-resolved luminescence. We show also that, under specific resonance conditions, the biexcitonic interband polarization can be coherently transferred to the excitonic one, leading to an extended lifetime of the total coherent polarization, which is reflected in the nonlinear optical spectrum of the system. We study the stability of this effect against phonon-induced decoherence.

Metal-insulator transition in Si(111)-(4 x 1)/(8 x 2)-In studied by optical spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Speiser, E.; Hinrichs, K.; Cobet, C.; Esser, N. [Leibniz-Institut fuer Analytische Wissenschaften - ISAS - e.V., Albert-Einstein-Str. 9, 12489 Berlin (Germany); Chandola, S. [Leibniz-Institut fuer Analytische Wissenschaften - ISAS - e.V., Albert-Einstein-Str. 9, 12489 Berlin (Germany); School of Physics, Trinity College Dublin 2 (Ireland); Gensch, M. [Helmholtz Zentrum Berlin (Germany); Wippermann, S.; Schmidt, W.G. [Theoretische Physik, Universitaet Paderborn (Germany); Bechstedt, F. [Institut fuer Festkoerpertheorie und -Optik, Friedrich-Schiller-Universitaet, Jena (Germany); Richter, W. [Dipartimento di Fisica, Universita di Roma Tor Vergata, Via della Ricerca Scientifica 1, 00133 Roma (Italy); Fleischer, K.; McGilp, J.F. [School of Physics, Trinity College Dublin 2 (Ireland)

2010-08-15

Measurements of the surface vibrational modes and optical response of Si(111)-(4 x 1)/(8 x 2)-In are compiled and a comparison to ab initio calculations performed within DFT-LDA formalism is given. Surface resonant Raman spectroscopy allows identifying a number of surface phonons with high spectral precision. The phase transition of the (4 x 1)-(8 x 2) surface structure is found to be accompanied by characteristic changes of the surface phonons, which are discussed with respect to various structural models suggested. The optical anisotropy of the (8 x 2) phase shows that the anisotropic Drude tail of the (4 x 1) phase is replaced by two peaks at 0.50 and 0.72 eV. The spectroscopic signatures of the (4 x 1) and (8 x 2) phases agree with a metal-insulator transition. The mid-IR-anisotropic optical response of the insulating (8 x 2) phase is interpreted in terms of electronic single particle excitations between surface electronic bands related to the In-nanowire surface. Comparison of the measured optical transitions with DFT ab initio calculations for the hexagon model and the trimer model of the (8 x 2) structure shows evidence for the existence of the hexagon structure. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Inelastic neutron studies of the low energy phonon excitations in the RENi2B2C superconductors (RE = Lu, Y, Ho, Er)

International Nuclear Information System (INIS)

Bullock, M.; Stassis, C.; Zarestky, J.; Goldman, A.; Canfield, P.

1997-01-01

The authors studied the low-energy phonon excitations for wavevectors close to the Fermi surface nesting vector rvec ξ m ≅ 0.55 rvec a. They find that above T c the frequencies of the Δ 4 [ζ00] lowest-lying optical and acoustic phonon modes decrease with decreasing temperature, for rvec ξ close to rvec ξ m , and there is a shift of intensity from the upper to the lower mode, an effect characteristic of coupled modes. From approximately 120K down to temperatures in the vicinity of T c , only a single unresolved peak is observed. Below T c the phonon spectra of the Y and Lu compounds change dramatically: they consist of a sharp peak at approximately 4.5 meV with a weak shoulder at the higher energy side. No such sharp peak was observed below T c in the Ho and Er compounds

Observation of chiral phonons

KAUST Repository

Zhu, Hanyu; Yi, Jun; Li, Ming-yang; Xiao, Jun; Zhang, Lifa; Yang, Chih-Wen; Kaindl, Robert A.; Li, Lain-Jong; Wang, Yuan; Zhang, Xiang

2018-01-01

Chirality reveals symmetry breaking of the fundamental interaction of elementary particles. In condensed matter, for example, the chirality of electrons governs many unconventional transport phenomena such as the quantum Hall effect. Here we show that phonons can exhibit intrinsic chirality in monolayer tungsten diselenide. The broken inversion symmetry of the lattice lifts the degeneracy of clockwise and counterclockwise phonon modes at the corners of the Brillouin zone. We identified the phonons by the intervalley transfer of holes through hole-phonon interactions during the indirect infrared absorption, and we confirmed their chirality by the infrared circular dichroism arising from pseudoangular momentum conservation. The chiral phonons are important for electron-phonon coupling in solids, phonon-driven topological states, and energy-efficient information processing.

Observation of chiral phonons

KAUST Repository

Zhu, Hanyu

2018-02-01

Chirality reveals symmetry breaking of the fundamental interaction of elementary particles. In condensed matter, for example, the chirality of electrons governs many unconventional transport phenomena such as the quantum Hall effect. Here we show that phonons can exhibit intrinsic chirality in monolayer tungsten diselenide. The broken inversion symmetry of the lattice lifts the degeneracy of clockwise and counterclockwise phonon modes at the corners of the Brillouin zone. We identified the phonons by the intervalley transfer of holes through hole-phonon interactions during the indirect infrared absorption, and we confirmed their chirality by the infrared circular dichroism arising from pseudoangular momentum conservation. The chiral phonons are important for electron-phonon coupling in solids, phonon-driven topological states, and energy-efficient information processing.

Fuchs-Kliewer phonons of H-covered and clean GaN(1 1 bar 00)

Science.gov (United States)

Rink, M.; Himmerlich, M.; Krischok, S.; Kröger, J.

2018-01-01

Inelastic electron scattering is used to study surface phonon polaritons on H-covered and clean GaN(1 1 bar 00) surfaces. The Fuchs-Kliewer phonon of GaN(1 1 bar 00) -H gives rise to characteristic signatures of its single and multiple excitation in specular electron energy loss spectra. The loss intensities for multi-phonon scattering processes decrease according to a Poisson distribution. Vibrational spectra of this surface are invariant on the time scale of days reflecting its chemical passivation by the H layer. In contrast, vibrational spectra of pristine GaN(1 1 bar 00) are subject to a pronounced temporal evolution where spectroscopic weight is gradually shifted towards the multiple excitation of the Fuchs-Kliewer phonon. As a consequence, the monotonous decrease of the cross section for multiple quantum excitation as observed for the H-covered surface is not applicable. This remarkable effect is particularly strong in spectra acquired at low primary energies of incident electrons, which hints at processes occurring in the very surface region. Scenarios that may contribute to these observations are discussed.

Hypersonic phononic crystals.

Science.gov (United States)

Gorishnyy, T; Ullal, C K; Maldovan, M; Fytas, G; Thomas, E L

2005-03-25

In this Letter we propose the use of hypersonic phononic crystals to control the emission and propagation of high frequency phonons. We report the fabrication of high quality, single crystalline hypersonic crystals using interference lithography and show that direct measurement of their phononic band structure is possible with Brillouin light scattering. Numerical calculations are employed to explain the nature of the observed propagation modes. This work lays the foundation for experimental studies of hypersonic crystals and, more generally, phonon-dependent processes in nanostructures.

Apertureless SNOM imaging of the surface phonon polariton waves: what do we measure?

Science.gov (United States)

Kazantsev, D. V.; Ryssel, H.

2013-10-01

The apertureless scanning near-field microscope (ASNOM) mapping of surface phonon polariton (SPP) waves being excited at the surface of the SiC polar crystal at a frequency corresponding to the lattice resonance was investigated. The wave with well-defined direction and source position, as well as a well-known propagation law, was used to calibrate the signal of an ASNOM. An experimental proof is presented showing that the signal collected by the ASNOM in such a case is proportional (as a complex number) to the local field amplitude above the surface, regardless of the tip response model. It is shown that the expression describing an ASNOM response, which is, in general case, rather complicated nonlinear function of a surface/tip dielectric constants, wavelength, tip vibration amplitude, tip shape etc., can be dramatically simplified in the case of the SPP waves mapping in a mid-IR range, due to a lucky combination of the tip and surface parameters for the case being considered. A tip vibration amplitude is much less than a running SPP wave field decay height in a normal direction. At the same time, the tip amplitude is larger than a characteristic distance at which a tip-surface electromagnetic near-field interaction plays a significant role.

Strong anharmonicity in the phonon spectra of PbTe and SnTe from first principles

Science.gov (United States)

Ribeiro, Guilherme A. S.; Paulatto, Lorenzo; Bianco, Raffaello; Errea, Ion; Mauri, Francesco; Calandra, Matteo

2018-01-01

At room temperature, PbTe and SnTe are efficient thermoelectrics with a cubic structure. At low temperature, SnTe undergoes a ferroelectric transition with a critical temperature strongly dependent on the hole concentration, while PbTe is an incipient ferroelectric. By using the stochastic self-consistent harmonic approximation, we investigate the anharmonic phonon spectra and the occurrence of a ferroelectric transition in both systems. We find that vibrational spectra strongly depend on the approximation used for the exchange-correlation kernel in density-functional theory. If gradient corrections and the theoretical volume are employed, then the calculation of the phonon frequencies as obtained from the diagonalization of the free-energy Hessian leads to phonon spectra in good agreement with experimental data for both systems. In PbTe we evaluate the linear thermal expansion coefficient γ =2.3 ×10-5K-1 , finding it to be in good agreement with experimental value of γ =2.04 ×10-5K-1 . Furthermore, we study the phonon spectrum and we do reproduce the transverse optical mode phonon satellite detected in inelastic neutron scattering and the crossing between the transverse optical and the longitudinal acoustic modes along the Γ X direction. The phonon satellite becomes broader at high temperatures but its energy is essentially temperature independent, in agreement with experiments. We decompose the self-consistent harmonic free energy in second-, third-, and fourth-order anharmonic terms. We find that the third- and fourth-order terms are small. However, treating the third-order term perturbatively on top of the second-order self-consistent harmonic free energy overestimates the energy of the satellite associated with the transverse optical mode. On the contrary, a perturbative treatment on top of the harmonic Hamiltonian breaks down and leads to imaginary phonon frequencies already at 300 K. In the case of SnTe, we describe the occurrence of a ferroelectric

Infrared optical responses of wurtzite In{sub x}Ga{sub 1−x}N thin films with porous surface morphology

Energy Technology Data Exchange (ETDEWEB)

Yew, P., E-mail: paulinevcu@hotmail.com [Institute of Nano-Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 Minden, Penang (Malaysia); School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang (Malaysia); Lee, S.C. [School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang (Malaysia); Centre of Excellence for Pre-University Studies, INTI International College Penang, Laureate International University, 1-Z, Lebuh Bukit Jambul, 11900 Penang (Malaysia); Ng, S.S. [Institute of Nano-Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 Minden, Penang (Malaysia); Hassan, H. Abu [School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang (Malaysia); Chen, W.L. [Department of Electronic Engineering, National Changhua University of Education, 500, Taiwan, ROC (China); Osipowicz, T.; Ren, M.Q. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 119260 (Singapore)

2016-03-31

Room temperature infrared (IR) optical responses of wurtzite indium gallium nitride (In{sub x}Ga{sub 1−x}N) in the composition range of 0.174 ≤ x ≤ 0.883 were investigated by the polarized IR reflectance spectroscopy. Analyses of the amplitudes of oscillation fringes in the non-reststrahlen region revealed that the high frequency dielectric constants of the samples were unusually smaller than the values predicted from the Clausius–Mossotti relation. This odd behavior was attributed to the porous surface morphology of the In{sub x}Ga{sub 1−x}N samples. The E{sub 1} optical phonon modes of the In{sub x}Ga{sub 1−x}N were deduced from the composition dependent reststrahlen features. The obtained values were compared to those calculated through the modified random element iso-displacement (MREI) model. The deviation between the measured data and the MREI model prediction were explained in detail from the aspects of strain, thermal expansion and anharmonic phonon-coupling. Finally, it was found that the large discrepancy of the E{sub 1}(LO) mode is mainly attributed to the effects of the longitudinal phonon–plasmon coupling. - Highlights: • Composition dependence of E{sub 1} modes of In{sub x}Ga{sub 1−x}N alloys (x = 0.174 to 0.883) • Dependence of porous morphology on infrared (IR) optical properties • Longitudinal phonon–plasmon coupling obscures determination of E{sub 1}(LO) mode.

Control of coherent information via on-chip photonic-phononic emitter-receivers.

Science.gov (United States)

Shin, Heedeuk; Cox, Jonathan A; Jarecki, Robert; Starbuck, Andrew; Wang, Zheng; Rakich, Peter T

2015-03-05

Rapid progress in integrated photonics has fostered numerous chip-scale sensing, computing and signal processing technologies. However, many crucial filtering and signal delay operations are difficult to perform with all-optical devices. Unlike photons propagating at luminal speeds, GHz-acoustic phonons moving at slower velocities allow information to be stored, filtered and delayed over comparatively smaller length-scales with remarkable fidelity. Hence, controllable and efficient coupling between coherent photons and phonons enables new signal processing technologies that greatly enhance the performance and potential impact of integrated photonics. Here we demonstrate a mechanism for coherent information processing based on travelling-wave photon-phonon transduction, which achieves a phonon emit-and-receive process between distinct nanophotonic waveguides. Using this device, physics--which supports GHz frequencies--we create wavelength-insensitive radiofrequency photonic filters with frequency selectivity, narrow-linewidth and high power-handling in silicon. More generally, this emit-receive concept is the impetus for enabling new signal processing schemes.

Control of coherent information via on-chip photonic–phononic emitter–receivers

Science.gov (United States)

Shin, Heedeuk; Cox, Jonathan A.; Jarecki, Robert; Starbuck, Andrew; Wang, Zheng; Rakich, Peter T.

2015-01-01

Rapid progress in integrated photonics has fostered numerous chip-scale sensing, computing and signal processing technologies. However, many crucial filtering and signal delay operations are difficult to perform with all-optical devices. Unlike photons propagating at luminal speeds, GHz-acoustic phonons moving at slower velocities allow information to be stored, filtered and delayed over comparatively smaller length-scales with remarkable fidelity. Hence, controllable and efficient coupling between coherent photons and phonons enables new signal processing technologies that greatly enhance the performance and potential impact of integrated photonics. Here we demonstrate a mechanism for coherent information processing based on travelling-wave photon–phonon transduction, which achieves a phonon emit-and-receive process between distinct nanophotonic waveguides. Using this device, physics—which supports GHz frequencies—we create wavelength-insensitive radiofrequency photonic filters with frequency selectivity, narrow-linewidth and high power-handling in silicon. More generally, this emit-receive concept is the impetus for enabling new signal processing schemes. PMID:25740405

Polarization dependent behavior of CdS around the first and second LO-phonon modes

International Nuclear Information System (INIS)

Frausto-Reyes, C.; Molina-Contreras, J.R.; Lopez-Alvarez, Y.F.; Medel-Ruiz, C.I.; Perez Ladron de Guevara, H.; Ortiz-Morales, M.

2010-01-01

The present work report studies on resonant Raman experimental line shape for CdS around the first and second LO-phonon modes. The application of our method to the study of LO-phonon modes of CdS suggests that the scattered intensity is dominated by the surface and dependent on polarization. Results showed that the Raman spectra for CdS, roughly fall into three groups: a broad line-wing with apparent maxima around 194 cm -1 in the range of 140 and 240 cm -1 which can be ascribed to overtone scattering from acoustic phonons; a band near the 1LO phonon mode which can be attributed to a combination of one-phonon scattering and peak acoustic phonon and finally, a band near the 2LO phonon mode which can be attributed to a combination of two-phonon scattering and peak acoustic phonon.

Interaction of surface plasmon polaritons and acoustic waves inside an acoustic cavity.

Science.gov (United States)

Khokhlov, Nikolai; Knyazev, Grigoriy; Glavin, Boris; Shtykov, Yakov; Romanov, Oleg; Belotelov, Vladimir

2017-09-15

In this Letter, we introduce an approach for manipulation of active plasmon polaritons via acoustic waves at sub-terahertz frequency range. The acoustic structures considered are designed as phononic Fabry-Perot microresonators where mirrors are presented with an acoustic superlattice and the structure's surface, and a plasmonic grating is placed on top of the acoustic cavity so formed. It provides phonon localization in the vicinity of the plasmonic grating at frequencies within the phononic stop band enhancing phonon-light interaction. We consider phonon excitation by shining a femtosecond laser pulse on the plasmonic grating. Appropriate theoretical model was used to describe the acoustic process caused by the pump laser pulse in the GaAs/AlAs-based acoustic cavity with a gold grating on top. Strongest modulation is achieved upon excitation of propagating surface plasmon polaritons and hybridization of propagating and localized plasmons. The relative changes in the optical reflectivity of the structure are more than an order of magnitude higher than for the structure without the plasmonic film.

Nonlinear optical studies of surfaces

International Nuclear Information System (INIS)

Shen, Y.R.

1994-07-01

The possibly of using nonlinear optical processes for surface studies has attracted increasing attention in recent years. Optical second harmonic generation (SHG) and sum frequency generation (SFG), in particular, have been well accepted as viable surface probes. They have many advantages over the conventional techniques. By nature, they are highly surface-specific and has a submonolayer sensitivity. As coherent optical processes, they are capable of in-situ probing of surfaces in hostile environment as well as applicable to all interfaces accessible by light. With ultrafast pump laser pulses, they can be employed to study surface dynamic processes with a subpicosecond time resolution. These advantages have opened the door to many exciting research opportunities in surface science and technology. This paper gives a brief overview of this fast-growing new area of research. Optical SHG from a surface was first studied theoretically and experimentally in the sixties. Even the submonolayer surface sensitivity of the process was noticed fairly early. The success was, however, limited because of difficulties in controlling the experimental conditions. It was not until the early 1980's that the potential of the process for surface analysis was duly recognized. The first surface study by SHG was actually motivated by the then active search for an understanding of the intriguing surface enhanced Raman scattering (SERS). It had been suspected that the enhancement in SERS mainly came from the local-field enhancement due to local plasmon resonances and pointing rod effect on rough metal surfaces. In our view, Raman scattering is a two-photon process and is therefore a nonlinear optical effect

Probing thermomechanics at the nanoscale: impulsively excited pseudosurface acoustic waves in hypersonic phononic crystals.

Science.gov (United States)

Nardi, Damiano; Travagliati, Marco; Siemens, Mark E; Li, Qing; Murnane, Margaret M; Kapteyn, Henry C; Ferrini, Gabriele; Parmigiani, Fulvio; Banfi, Francesco

2011-10-12

High-frequency surface acoustic waves can be generated by ultrafast laser excitation of nanoscale patterned surfaces. Here we study this phenomenon in the hypersonic frequency limit. By modeling the thermomechanics from first-principles, we calculate the system's initial heat-driven impulsive response and follow its time evolution. A scheme is introduced to quantitatively access frequencies and lifetimes of the composite system's excited eigenmodes. A spectral decomposition of the calculated response on the eigemodes of the system reveals asymmetric resonances that result from the coupling between surface and bulk acoustic modes. This finding allows evaluation of impulsively excited pseudosurface acoustic wave frequencies and lifetimes and expands our understanding of the scattering of surface waves in mesoscale metamaterials. The model is successfully benchmarked against time-resolved optical diffraction measurements performed on one-dimensional and two-dimensional surface phononic crystals, probed using light at extreme ultraviolet and near-infrared wavelengths.

Phonon Dispersion and the Competition between Pairing and Charge Order

Science.gov (United States)

Costa, N. C.; Blommel, T.; Chiu, W.-T.; Batrouni, G.; Scalettar, R. T.

2018-05-01

The Holstein model describes the interaction between fermions and a collection of local (dispersionless) phonon modes. In the dilute limit, the phonon degrees of freedom dress the fermions, giving rise to polaron and bipolaron formation. At higher densities, the phonons mediate collective superconducting (SC) and charge-density wave (CDW) phases. Quantum Monte Carlo (QMC) simulations have considered both these limits but have not yet focused on the physics of more general phonon spectra. Here we report QMC studies of the role of phonon dispersion on SC and CDW order in such models. We quantify the effect of finite phonon bandwidth and curvature on the critical temperature Tcdw for CDW order and also uncover several novel features of diagonal long-range order in the phase diagram, including a competition between charge patterns at momenta q =(π ,π ) and q =(0 ,π ) which lends insight into the relationship between Fermi surface nesting and the wave vector at which charge order occurs. We also demonstrate SC order at half filling in situations where a nonzero bandwidth sufficiently suppresses Tcdw.

First Principles Modeling of Phonon Heat Conduction in Nanoscale Crystalline Structures

International Nuclear Information System (INIS)

Mazumder, Sandip; Li, Ju

2010-01-01

of optical phonons, and (2) by developing a suite of numerical algorithms for solution of the BTE for phonons. The suite of numerical algorithms includes Monte Carlo techniques and deterministic techniques based on the Discrete Ordinates Method and the Ballistic-Diffusive approximation of the BTE. These methods were applied to calculation of thermal conductivity of silicon thin films, and to simulate heat conduction in multi-dimensional structures. In addition, thermal transport in silicon nanowires was investigated using two different first principles methods. One was to apply the Green-Kubo formulation to an equilibrium system. The other was to use Non-Equilibrium Molecular Dynamics (NEMD). Results of MD simulations showed that the nanowire cross-sectional shape and size significantly affects the thermal conductivity, as has been found experimentally. In summary, the project clarified the role of various phonon modes - in particular, optical phonon - in non-equilibrium transport in silicon. It laid the foundation for the solution of the BTE in complex three-dimensional structures using deterministic techniques, paving the way for the development of robust numerical tools that could be coupled to existing device simulation tools to enable coupled electro-thermal modeling of practical electronic/optoelectronic devices. Finally, it shed light on why the thermal conductivity of silicon nanowires is so sensitive to its cross-sectional shape.

Decoherence in semiconductor cavity QED systems due to phonon couplings

DEFF Research Database (Denmark)

Nielsen, Per Kær; Mørk, Jesper

2014-01-01

We investigate the effect of electron-phonon interactions on the coherence properties of single photons emitted from a semiconductor cavity QED (quantum electrodynamics) system, i.e., a quantum dot embedded in an optical cavity. The degree of indistinguishability, governing the quantum mechanical...

Density of phonon states in the light-harvesting complex II of green plants

CERN Document Server

Pieper, J K; Irrgang, K D; Renger, G

2002-01-01

In photosynthetic antenna complexes, the coupling of electronic transitions to low-frequency vibrations of the protein matrix (phonons) plays an essential role in light absorption and ultra-fast excitation energy transfer (EET). The model calculations presented here indicate that inelastic neutron scattering experiments provide invaluable information on the phonon density of states for light-harvesting complex II, which may permit a consistent interpretation of contradictory results from high-resolution optical spectroscopy. (orig.)

Soft phonon modes driven huge difference on lattice thermal conductivity between topological semimetal WC and WN

Science.gov (United States)

Guo, San-Dong; Chen, Peng

2018-04-01

Topological semimetals are currently attracting increasing interest due to their potential applications in topological qubits and low-power electronics, which are closely related to their thermal transport properties. Recently, the triply degenerate nodal points near the Fermi level of WC are observed by using angle-resolved photoemission spectroscopy. In this work, by solving the Boltzmann transport equation based on first-principles calculations, we systematically investigate the phonon transport properties of topological semimetals WC and WN. The predicted room-temperature lattice thermal conductivities of WC (WN) along the a and c directions are 1140.64 (7.47) W m-1 K-1 and 1214.69 (5.39) W m-1 K-1. Considering the similar crystal structure of WC and WN, it is quite interesting to find that the thermal conductivity of WC is more than two orders of magnitude higher than that of WN. It is found that, different from WN, the large acoustic-optical (a-o) gap prohibits the acoustic+acoustic → optical (aao) scattering, which gives rise to very long phonon lifetimes, leading to ultrahigh lattice thermal conductivity in WC. For WN, the lack of an a-o gap is due to soft phonon modes in optical branches, which can provide more scattering channels for aao scattering, producing very short phonon lifetimes. Further deep insight can be attained from their different electronic structures. Distinctly different from that in WC, the density of states of WN at the Fermi level becomes very sharp, which leads to destabilization of WN, producing soft phonon modes. It is found that the small shear modulus G and C44 limit the stability of WN, compared with WC. Our studies provide valuable information for phonon transports in WC and WN, and motivate further experimental studies to study their lattice thermal conductivities.

LO-phonon and plasmon coupling in neutron-transmutation-doped GaAs

International Nuclear Information System (INIS)

Kuriyama, K.; Sakai, K.; Okada, M.

1996-01-01

Coupling between the longitudinal-optic (LO) phonon mode and the longitudinal plasma mode in neutron-transmutation-doped (NTD) semi-insulating GaAs was studied using Raman-scattering spectroscopy and a Fourier-transform infrared spectrometer. When the electron concentration due to the activation of NTD impurities (Ge Ga and Se As ) approaches ∼8x10 16 cm -3 , the LO-phonon endash plasmon coupling is observed. This behavior is consistent with the free-electron absorption due to the activation of NTD impurities in samples annealed above 600 degree C. copyright 1996 The American Physical Society

Parity-Time Synthetic Phononic Media

DEFF Research Database (Denmark)

Christensen, Johan; Willatzen, Morten; Velasco, V. R.

2016-01-01

media, have been devised in many optical systems with the ground breaking potential to create nonreciprocal structures and one-way cloaks of invisibility. Here we demonstrate a feasible approach for the case of sound where the most important ingredients within synthetic materials, loss and gain......, are achieved through electrically biased piezoelectric semiconductors. We study first how wave attenuation and amplification can be tuned, and when combined, can give rise to a phononic PT synthetic media with unidirectional suppressed reflectance, a feature directly applicable to evading sonar detection....

Electron mobility variance in the presence of an electric field: Electron-phonon field-induced tunnel scattering

International Nuclear Information System (INIS)

Melkonyan, S.V.

2012-01-01

The problem of electron mobility variance is discussed. It is established that in equilibrium semiconductors the mobility variance is infinite. It is revealed that the cause of the mobility variance infinity is the threshold of phonon emission. The electron-phonon interaction theory in the presence of an electric field is developed. A new mechanism of electron scattering, called electron-phonon field-induced tunnel (FIT) scattering, is observed. The effect of the electron-phonon FIT scattering is explained in terms of penetration of the electron wave function into the semiconductor band gap in the presence of an electric field. New and more general expressions for the electron-non-polar optical phonon scattering probability and relaxation time are obtained. The results show that FIT transitions have principle meaning for the mobility fluctuation theory: mobility variance becomes finite.

The Effect of Phonon Relaxation Process on Absorption Spectra ...

African Journals Online (AJOL)

In this work we study the effect of phonon relaxation process on the absorption spectra using the Green's function technique. The Green's function technique which is widely used in many particle problems is used to solve the Kubo formula which describes the optical absorption process. Finally the configurational diagram is ...

Electron-phonon heat exchange in quasi-two-dimensional nanolayers

Science.gov (United States)

Anghel, Dragos-Victor; Cojocaru, Sergiu

2017-12-01

We study the heat power P transferred between electrons and phonons in thin metallic films deposited on free-standing dielectric membranes. The temperature range is typically below 1 K, such that the wavelengths of the excited phonon modes in the system is large enough so that the picture of a quasi-two-dimensional phonon gas is applicable. Moreover, due to the quantization of the components of the electron wavevectors perpendicular to the metal film's surface, the electrons spectrum forms also quasi two-dimensional sub-bands, as in a quantum well (QW). We describe in detail the contribution to the electron-phonon energy exchange of different electron scattering channels, as well as of different types of phonon modes. We find that heat flux oscillates strongly with thickness of the film d while having a much smoother variation with temperature (Te for the electrons temperature and Tph for the phonons temperature), so that one obtains a ridge-like landscape in the two coordinates, (d, Te) or (d, Tph), with crests and valleys aligned roughly parallel to the temperature axis. For the valley regions we find P ∝ Te3.5 - Tph3.5. From valley to crest, P increases by more than one order of magnitude and on the crests P cannot be represented by a simple power law. The strong dependence of P on d is indicative of the formation of the QW state and can be useful in controlling the heat transfer between electrons and crystal lattice in nano-electronic devices. Nevertheless, due to the small value of the Fermi wavelength in metals, the surface imperfections of the metallic films can reduce the magnitude of the oscillations of P vs. d, so this effect might be easier to observe experimentally in doped semiconductors.

Nonlinear optical techniques for surface studies

International Nuclear Information System (INIS)

Shen, Y.R.

1981-09-01

Recent effort in developing nonlinear optical techniques for surface studies is reviewed. Emphasis is on monolayer detection of adsorbed molecules on surfaces. It is shown that surface coherent antiStokes Raman scattering (CARS) with picosecond pulses has the sensitivity of detecting submonolayer of molecules. On the other hand, second harmonic or sum-frequency generation is also sensitive enough to detect molecular monolayers. Surface-enhanced nonlinear optical effects on some rough metal surfaces have been observed. This facilitates the detection of molecular monolayers on such surfaces, and makes the study of molecular adsorption at a liquid-metal interface feasible. Advantages and disadvantages of the nonlinear optical techniques for surface studies are discussed

Interaction of non-equilibrium phonons with electron-hole plasmas in germanium

International Nuclear Information System (INIS)

Kirch, S.J.

1985-01-01

This thesis presents results of experiments on the interaction of phonons and photo-excited electron-hole plasmas in Ge at low temperature. The first two studies involved the low-temperature fluid phase known as the electron-hole liquid (EHL). The third study involved a wider range of temperatures and includes the higher temperature electron-hole plasma (EHP). In the first experiment, superconducting tunnel junctions are used to produce quasi-monochromatic phonons, which propagate through the EHL. The magnitude of the absorption of these non-equilibrium phonons gives a direct measure of the coupling constant, the deformation potential. In the second experiment, the nonequilibrium phonons are generated by laser excitation of a metal film. An unusual sample geometry allows examination of the EHL-phonon interaction near the EHL excitation surface. This coupling is examined for both cw and pulsed EHL excitation. In the third experiment, the phonons are byproducts of the photo-excited carrier thermalization. The spatial, spectral and temporal dependence of the recombination luminescence is examined. A phonon wind force is observed to dominate the transport properties of the EHL and the EHP. These carriers are never observed to move faster than the phonon velocity even during the laser pulse

Supra-ballistic phonons

International Nuclear Information System (INIS)

Russell, F.M.

1989-05-01

Energetic particles moving with a solid, either from nuclear reactions or externally injected, deposit energy by inelastic scattering processes which eventually appears as thermal energy. If the transfer of energy occurs in a crystalline solid then it is possible to couple some of the energy directly to the nuclei forming the lattice by generating phonons. In this paper the transfer of energy from a compound excited nucleus to the lattice is examined by introducing a virtual particle Π. It is shown that by including a Π in the nuclear reaction a substantial amount of energy can be coupled directly to the lattice. In the lattice this particle behaves as a spatially localized phonon of high energy, the so-called supra-ballistic phonon. By multiple inelastic scattering the supra-ballistic phonon eventually thermalizes. Because both the virtual particle Π and the equivalent supra-ballistic phonon have no charge or spin and can only exist within a lattice it is difficult to detect other than by its decay into thermal phonons. The possibility of a Π removing excess energy from a compound nucleus formed by the cold fusion of deuterium is examined. (Author)

Observation of antiphase coherent phonons in the warped Dirac cone of Bi2Te3

Science.gov (United States)

Golias, E.; Sánchez-Barriga, J.

2016-10-01

In this Rapid Communication we investigate the coupling between excited electrons and phonons in the highly anisotropic electronic structure of the prototypical topological insulator Bi2Te3 . Using time- and angle-resolved photoemission spectroscopy we are able to identify the emergence and ultrafast temporal evolution of the longitudinal-optical A1 g coherent-phonon mode in Bi2Te3 . We observe an antiphase behavior in the onset of the coherent-phonon oscillations between the Γ K ¯ and the Γ M ¯ high-symmetry directions that is consistent with warping. The qualitative agreement between our density-functional theory calculations and the experimental results reveals the critical role of the anisotropic coupling between Dirac fermions and phonon modes in the topological insulator Bi2Te3 .

From Planck's quanta to phonon in solids

International Nuclear Information System (INIS)

Martinez- Duart, J. M; Melo, O. de

2008-01-01

Planck's 1900 published results on the black body radiation had the first application in the quantification of radiation. This quantum hypothesis explained several noteworthy light- matter interaction effects in 1905. These were the electron emission, Stokes law and gas ionization. As soon as two years later, A. Einstein derived an expression for the specific heat of solids, applying the quantum hypothesis to the mechanical oscillation of the atoms. In the present work, the main ideas which led to the concept of phonon are discussed. From an historical point of view, the developments due to Einstein, Born, Debye, among others are analyzed and most important properties of the phonons are presented. Finally, the importance of this entity in the theory of solids is explained, in particular regarding the thermal and optical properties as well as the electrical conductivity

Bulk-like-phonon polaritons in one-dimensional photonic superlattices

Science.gov (United States)

Gómez-Urrea, H. A.; Duque, C. A.; Mora-Ramos, M. E.

2017-05-01

We investigate the properties of a one-dimensional photonic superlattice made of alternating layers of air and wurtzite aluminum nitride. The Maxwell equations are solved for any admissible values of the angle of incidence by means of the transfer matrix formalism. The band structure of the frequency spectrum is obtained, as well as the density of states and transmittance associated to both the TM and TE modes. The dispersion relations indicate that for oblique incidence and TM modes there is a component of the electric field oriented along the growth direction of the structure that couples with the longitudinal optical phonon oscillations of the aluminum nitride thus leading to the appearance of longitudinal phonon polaritons in the system.

Optimizing phonon space in the phonon-coupling model

Science.gov (United States)

Tselyaev, V.; Lyutorovich, N.; Speth, J.; Reinhard, P.-G.

2017-08-01

We present a new scheme to select the most relevant phonons in the phonon-coupling model, named here the time-blocking approximation (TBA). The new criterion, based on the phonon-nucleon coupling strengths rather than on B (E L ) values, is more selective and thus produces much smaller phonon spaces in the TBA. This is beneficial in two respects: first, it curbs the computational cost, and second, it reduces the danger of double counting in the expansion basis of the TBA. We use here the TBA in a form where the coupling strength is regularized to keep the given Hartree-Fock ground state stable. The scheme is implemented in a random-phase approximation and TBA code based on the Skyrme energy functional. We first explore carefully the cutoff dependence with the new criterion and can work out a natural (optimal) cutoff parameter. Then we use the freshly developed and tested scheme for a survey of giant resonances and low-lying collective states in six doubly magic nuclei looking also at the dependence of the results when varying the Skyrme parametrization.

Depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC measured using coherent acoustic phonons

Directory of Open Access Journals (Sweden)

Andrey Baydin

2016-06-01

Full Text Available Silicon carbide (SiC is a promising material for new generation electronics including high power/high temperature devices and advanced optical applications such as room temperature spintronics and quantum computing. Both types of applications require the control of defects particularly those created by ion bombardment. In this work, modification of optical constants of 4H-SiC due to hydrogen implantation at 180 keV and at fluences ranging from 1014 to 1016 cm−2 is reported. The depth dependence of the modified optical constants was extracted from coherent acoustic phonon spectra. Implanted spectra show a strong dependence of the 4H-SiC complex refractive index depth profile on H+ fluence. These studies provide basic insight into the dependence of optical properties of 4H silicon carbide on defect densities created by ion implantation, which is of relevance to the fabrication of SiC-based photonic and optoelectronic devices.

Magneto-optical light scattering from ferromagnetic surfaces

International Nuclear Information System (INIS)

Gonzalez, M.U.; Armelles, G.; Martinez Boubeta, C.; Cebollada, A.

2003-01-01

We have studied the optical and magneto-optical components of the light scattered by the surface of several Fe films with different morphologies. We present a method, based on the ratio between the optical and magneto-optical components of the scattered intensity, to discern the physical origin, either structural or magnetic corrugation, of the light scattered by these ferromagnetic surfaces. Surface versus bulk magnetic information can be separated by magneto-optical light scattering measurements, the scattered light being more sensitive to magnetization differences between surface and bulk than the reflected one

Phononic crystals fundamentals and applications

CERN Document Server

Adibi, Ali

2016-01-01

This book provides an in-depth analysis as well as an overview of phononic crystals. This book discusses numerous techniques for the analysis of phononic crystals and covers, among other material, sonic and ultrasonic structures, hypersonic planar structures and their characterization, and novel applications of phononic crystals. This is an ideal book for those working with micro and nanotechnology, MEMS (microelectromechanical systems), and acoustic devices. This book also: Presents an introduction to the fundamentals and properties of phononic crystals Covers simulation techniques for the analysis of phononic crystals Discusses sonic and ultrasonic, hypersonic and planar, and three-dimensional phononic crystal structures Illustrates how phononic crystal structures are being deployed in communication systems and sensing systems.

Hyperbolic phonon polaritons in hexagonal boron nitride (Conference Presentation)

Science.gov (United States)

Dai, Siyuan; Ma, Qiong; Fei, Zhe; Liu, Mengkun; Goldflam, Michael D.; Andersen, Trond; Garnett, William; Regan, Will; Wagner, Martin; McLeod, Alexander S.; Rodin, Alexandr; Zhu, Shou-En; Watanabe, Kenji; Taniguchi, T.; Dominguez, Gerado; Thiemens, Mark; Castro Neto, Antonio H.; Janssen, Guido C. A. M.; Zettl, Alex; Keilmann, Fritz; Jarillo-Herrero, Pablo; Fogler, Michael M.; Basov, Dmitri N.

2016-09-01

Uniaxial materials whose axial and tangential permittivities have opposite signs are referred to as indefinite or hyperbolic media. While hyperbolic responses are normally achieved with metamaterials, hexagonal boron nitride (hBN) naturally possesses this property due to the anisotropic phonons in the mid-infrared. Using scattering-type scanning near-field optical microscopy, we studied polaritonic phenomena in hBN. We performed infrared nano-imaging of highly confined and low-loss hyperbolic phonon polaritons in hBN. The polariton wavelength was shown to be governed by the hBN thickness according to a linear law persisting down to few atomic layers [1]. Additionally, we carried out the modification of hyperbolic response in meta-structures comprised of a mononlayer graphene deposited on hBN [2]. Electrostatic gating of the top graphene layer allows for the modification of wavelength and intensity of hyperbolic phonon polaritons in bulk hBN. The physics of the modification originates from the plasmon-phonon coupling in the hyperbolic medium. Furthermore, we demonstrated the "hyperlens" for subdiffractional focusing and imaging using a slab of hBN [3]. References [1] S. Dai et al., Science, 343, 1125 (2014). [2] S. Dai et al., Nature Nanotechnology, 10, 682 (2015). [3] S. Dai et al., Nature Communications, 6, 6963 (2015).

Photon-phonon laser on crystalline silicon: a feasibility study

International Nuclear Information System (INIS)

Zadernovsky, A A

2015-01-01

We discuss a feasibility of photon-phonon laser action in bulk silicon with electron population inversion. It is well known, that only direct gap semiconductors are used as an active medium in optical lasers. In indirect gap semiconductors, such as crystalline silicon, the near-to-gap radiative electron transitions must be assisted by emission or absorption of phonons to conserve the momentum. The rate of such two-quantum transitions is much less than in direct gap semiconductors, where the similar radiative transitions are single-quantum. As a result, the quantum efficiency of luminescence in silicon is too small to get it as a laser material. Numerous proposals to overcome this problem are aimed at increasing the rate of radiative recombination. We suggest enhancing the quantum efficiency of luminescence in silicon by stimulating the photon part of the two-quantum transitions by light from an appropriate external laser source. This allows us to obtain initially an external-source-assisted lasing in silicon and then a true photon-phonon lasing without any external source of radiation. Performed analysis revealed a number of requirements to the silicon laser medium (temperature, purity and perfection of crystals) and to the intensity of stimulating radiation. We discuss different mechanisms that may hinder the implementation of photon-phonon lasing in silicon

Defined wetting properties of optical surfaces

Science.gov (United States)

Felde, Nadja; Coriand, Luisa; Schröder, Sven; Duparré, Angela; Tünnermann, Andreas

2017-10-01

Optical surfaces equipped with specific functional properties have attracted increasing importance over the last decades. In the light of cost reduction, hydrophobic self-cleaning behavior is aspired. On the other side, hydrophilic properties are interesting due to their anti-fog effect. It has become well known that such wetting states are significantly affected by the surface morphology. For optical surfaces, however, this fact poses a problem, as surface roughness can induce light scattering. The generation of optical surfaces with specific wetting properties, hence, requires a profound understanding of the relation between the wetting and the structural surface properties. Thus, our work concentrates on a reliable acquisition of roughness data over a wide spatial frequency range as well as on the comprehensive description of the wetting states, which is needed for the establishment of such correlations. We will present our advanced wetting analysis for nanorough optical surfaces, extended by a vibration-based procedure, which is mainly for understanding and tailoring the wetting behavior of various solid-liquid systems in research and industry. Utilizing the relationships between surface roughness and wetting, it will be demonstrated how different wetting states for hydrophobicity and hydrophilicity can be realized on optical surfaces with minimized scatter losses.

Modeling of phonon- and Coulomb-mediated capture processes in quantum dots

DEFF Research Database (Denmark)

Magnúsdóttir, Ingibjörg

2003-01-01

This thesis describes modeling of carrier relaxation processes in self-assembled quantum-dot-structures, with particular emphasis on carrier capture processes in quantum dots. Relaxation by emission of lontitudinal optical (LO) phonons is very efficient in bulk semiconductors and nanostructures...... of higher dimensionality. Here, we investigate carrier capture processes into quantum dots, mediated by emission of one and two LO phonons. In these investigations is is assumed that the dot is empty initially. In the Case of single-phonon capture we also investigate the influence of the presence...... of a charge in the quantum-dot state to which the capture takes place. In general, capture rates are of the same order as capture rates into an empty dot state, but in some cases the dot-size interval for which the capture process is energetically allowed, is considerably reduced.The above calculations...

Theory of the Influence of Phonon-Phonon and Electron-Phonon Interactions on the Scattering of Neutrons by Crystals

International Nuclear Information System (INIS)

Kokkedee, J.J.J.

1963-01-01

As predicted by harmonic theory the coherent inelastic spectrums of neutrons, scattered by a single, non-conducting crystal, for a particular angle of scattering consists of a number of delta-function peaks superposed on a continuous background. The peaks correspond to one-phonon processes in which one phonon is absorbed or emitted by the neutron; the background arises from multi-phonon processes. When anharmonic forces (phonon-phonon interactions) are present, the delta-function peaks are broadened into finite peaks, while their central frequencies are shifted with respect to the harmonic values. In the case of a metal there is in addition to phonon-phonon interactions an interaction between phonons and conduction electrons, which also gives a contribution to the displacement and broadening oftheone-phononpeaks. Continuing earlier work of Van Hove (sho considered the relatively simple case of a non-conductin crystal in its ground state (T = 0 o K) ), we have studied the shifts and widths of the scattering peaks as a 'result of the above-mentioned interactions by means of many particle perturbation theory, making extensive use of diagram techniques. Prerequisite to the entire discussion is the assumption that, independent of the strength of the interactions, the width of each peak is small compared to the value of the frequency at its centre; only then the peaks can be considered as being well defined with respect to the background to higher order in the interactions. This condition is expected to be fulfilled for temperatures which are not too high and values of the phonon wave vector which are not too large. Our procedure yields closed formulae for the partial scattering function describing the peaks, which can be evaluated to arbitrarily high accuracy. In particular an expansion for calculating the line shift and line width in powers of u/d and in terms of simple connected diagrams is obtained (u is an average atomic or ionic displacement, d is the smallest

Dynamical Fano-Like Interference between Rabi Oscillations and Coherent Phonons in a Semiconductor Microcavity System.

Science.gov (United States)

Yoshino, S; Oohata, G; Mizoguchi, K

2015-10-09

We report on dynamical interference between short-lived Rabi oscillations and long-lived coherent phonons in CuCl semiconductor microcavities resulting from the coupling between the two oscillations. The Fourier-transformed spectra of the time-domain signals obtained from semiconductor microcavities by using a pump-probe technique show that the intensity of the coherent longitudinal optical phonon of CuCl is enhanced by increasing that of the Rabi oscillation, which indicates that the coherent phonon is driven by the Rabi oscillation through the Fröhlich interaction. Moreover, as the Rabi oscillation frequency decreases upon crossing the phonon frequency, the spectral profile of the coherent phonon changes from a peak to a dip with an asymmetric structure. The continuous wavelet transformation reveals that these peak and dip structures originate from constructive and destructive interference between Rabi oscillations and coherent phonons, respectively. We demonstrate that the asymmetric spectral structures in relation to the frequency detuning are well reproduced by using a classical coupled oscillator model on the basis of dynamical Fano-like interference.

Phonon operators for deformed nuclei

International Nuclear Information System (INIS)

Solov'ev, V.G.

1982-01-01

The mathematical formalism with the phonon operators independent of the signature of the angular momentum projection turns out to be inadequate for describing excited states of deformed nuclei. New phonon operators are introduced which depend on the signature of the angular momentum projection on the symmetry axis of a deformed nucleus. It is shown that the calculations with the new phonons take correctly into account the Pauli principle in two-phonon components of wave functions. The results obtained differ from those given by the phonons independent of the signature of the angular momentum projection. The new phonons must be used in deformed nuclei at taking systematically the Pauli principle into account and in calculations involving wave functions of excited states having components with more than one-phonon operator

Superfluidity of nuclei and the nucleon--phonon interaction

International Nuclear Information System (INIS)

Kadmenskii, S.G.; Luk'yanovich, P.A.

1989-01-01

The Lehmann expansion for the exact one-particle Green function in a system with superfluidity is obtained. Expressions for the correlation function and mass operator are derived with allowance for a retarded nucleon--phonon interaction. Within the scope of the formalism developed, equations for the superfluidity of nuclei allowing for quasiparticle fragmentation effects are derived. It is concluded that the retarded nucleon--phonon interaction in the particle--particle channel causes a decrease of the fragmentation of the one-particle force in the vicinity of the Fermi surface. It is shown that inclusion of a nonretarded vacuum interaction of two nucleons and of a retarded interaction due to the exchange between two nucleons of low-lying highly collectivized quadrupole phonons is sufficient to provide the necessary scale of attraction in the description of pair correlations of nucleons in nuclei with developed superfluidity

Phonon properties of americium phosphide

Energy Technology Data Exchange (ETDEWEB)

Arya, B. S., E-mail: bsarya13@yahoo.com [Department of Physics, Govt. Narmada P G College, Hoshangabad -461001 (India); Aynyas, Mahendra [Department of Physics, C. S. A. Govt. P. G. College Sehore-46601 (India); Sanyal, S. P. [Department of Physics, Barkatullah University, Bhopal-462026 (India)

2016-05-23

Phonon properties of AmP have been studied by using breathing shell models (BSM) which includes breathing motion of electrons of the Am atoms due to f-d hybridization. The phonon dispersion curves, specific heat calculated from present model. The calculated phonon dispersion curves of AmP are presented follow the same trend as observed in uranium phosphide. We discuss the significance of this approach in predicting the phonon dispersion curves of these compounds and examine the role of electron-phonon interaction.

Peierls transition with acoustic phonons and twist deformation in carbon nanotubes

NARCIS (Netherlands)

Figge, M. T.; Mostovoy, M. V.; Knöster, J.

1999-01-01

Submitted to: Phys. Rev. Lett. Abstract: We consider the Peierls instability due to the interaction of electrons with both acoustic and optical phonons. We suggest that such a transition takes place in carbon nanotubes with small radius. The topological excitations and the temperature dependence of

Coherent generation of symmetry-forbidden phonons by light-induced electron-phonon interactions in magnetite

Science.gov (United States)

Borroni, S.; Baldini, E.; Katukuri, V. M.; Mann, A.; Parlinski, K.; Legut, D.; Arrell, C.; van Mourik, F.; Teyssier, J.; Kozlowski, A.; Piekarz, P.; Yazyev, O. V.; Oleś, A. M.; Lorenzana, J.; Carbone, F.

2017-09-01

Symmetry breaking across phase transitions often causes changes in selection rules and emergence of optical modes which can be detected via spectroscopic techniques or generated coherently in pump-probe experiments. In second-order or weakly first-order transitions, fluctuations of the ordering field are present above the ordering temperature, giving rise to intriguing precursor phenomena, such as critical opalescence. Here, we demonstrate that in magnetite (Fe3O4 ) light excitation couples to the critical fluctuations of the charge order and coherently generates structural modes of the ordered phase above the critical temperature of the Verwey transition. Our findings are obtained by detecting coherent oscillations of the optical constants through ultrafast broadband spectroscopy and analyzing their dependence on temperature. To unveil the coupling between the structural modes and the electronic excitations, at the origin of the Verwey transition, we combine our results from pump-probe experiments with spontaneous Raman scattering data and theoretical calculations of both the phonon dispersion curves and the optical constants. Our methodology represents an effective tool to study the real-time dynamics of critical fluctuations across phase transitions.

Toward single electron resolution phonon mediated ionization detectors

Energy Technology Data Exchange (ETDEWEB)

Mirabolfathi, Nader, E-mail: mirabolfathi@physics.tamu.edu [Department of Physics and Astronomy, Texas A& M University (United States); Harris, H. Rusty; Mahapatra, Rupak; Sundqvist, Kyle; Jastram, Andrew [Department of Physics and Astronomy, Texas A& M University (United States); Serfass, Bruno; Faiez, Dana; Sadoulet, Bernard [Department of Physics, University of California at Berkeley (United States)

2017-05-21

Experiments seeking to detect rare event interactions such as dark matter or coherent elastic neutrino nucleus scattering are striving for large mass detectors with very low detection threshold. Using Neganov-Luke phonon amplification effect, the Cryogenic Dark Matter Search (CDMS) experiment is reaching unprecedented RMS resolutions of ∼14 eV{sub ee}. CDMSlite is currently the most sensitive experiment to WIMPs of mass ∼5 GeV/c{sup 2} but is limited in achieving higher phonon gains due to an early onset of leakage current into Ge crystals. The contact interface geometry is particularly weak for blocking hole injection from the metal, and thus a new design is demonstrated that allows high voltage bias via vacuum separated electrode. With an increased bias voltage and a×2 Luke phonon gain, world best RMS resolution of sigma ∼7 eV{sub ee} for 0.25 kg (d=75 mm, h=1 cm) Ge detectors was achieved. Since the leakage current is a function of the field and the phonon gain is a function of the applied voltage, appropriately robust interface blocking material combined with thicker substrate (25 mm) will reach a resolution of ∼2.8 eV{sub ee}. In order to achieve better resolution of ∼ eV, we are investigating a layer of insulator between the phonon readout surface and the semiconductor crystals.

Phonon operators in deformed nuclei

International Nuclear Information System (INIS)

Soloviev, V.G.

1981-01-01

For the description of the excited states in deformed nuclei new phonon operators are introduced, which depend on the sign of the angular momentum projection onto the symmetry axis of a deformed nucleus. In the calculations with new phonons the Pauli principle is correctly taken into account in the two-phonon components of the wave functions. There is a difference in comparison with the calculation with phonons independent of the sign of the angular momentum projection. The new phonons should be used in deformed nuclei if the Pauli principle is consistently taken into account and in the calculations with the excited state wave functions having the components with more than one phonon operator [ru

Quasiparticle-phonon nuclear model

International Nuclear Information System (INIS)

Soloviev, V.G.

1977-01-01

The general assumptions of the quasiparticle-phonon model of complex nuclei are given. The choice of the model hamiltonian as an average field and residual forces is discussed. The phonon description and quasiparticle-phonon interaction are presented. The system of basic equations and their approximate solutions are obtained. The approximation is chosen so as to obtain the most correct description of few-quasiparticle components rather than of the whole wave function. The method of strenght functions is presented, which plays a decisive role in practical realization of the quasiparticle-phonon model for the description of some properties of complex nuclei. The range of applicability of the quasiparticle-phonon nuclear model is determined as few-quasiparticle components of the wave functions at low, intermediate and high excitation energies averaged in a certain energy interval

Phonon Self-Energy Corrections to Nonzero Wave-Vector Phonon Modes in Single-Layer Graphene

Science.gov (United States)

Araujo, P. T.; Mafra, D. L.; Sato, K.; Saito, R.; Kong, J.; Dresselhaus, M. S.

2012-07-01

Phonon self-energy corrections have mostly been studied theoretically and experimentally for phonon modes with zone-center (q=0) wave vectors. Here, gate-modulated Raman scattering is used to study phonons of a single layer of graphene originating from a double-resonant Raman process with q≠0. The observed phonon renormalization effects are different from what is observed for the zone-center q=0 case. To explain our experimental findings, we explored the phonon self-energy for the phonons with nonzero wave vectors (q≠0) in single-layer graphene in which the frequencies and decay widths are expected to behave oppositely to the behavior observed in the corresponding zone-center q=0 processes. Within this framework, we resolve the identification of the phonon modes contributing to the G⋆ Raman feature at 2450cm-1 to include the iTO+LA combination modes with q≠0 and also the 2iTO overtone modes with q=0, showing both to be associated with wave vectors near the high symmetry point K in the Brillouin zone.

Modulation of photonic structures by surface acoustic waves

International Nuclear Information System (INIS)

Mauricio M de Lima Jr; Santos, Paulo V

2005-01-01

This paper reviews the interaction between coherently stimulated acoustic phonons in the form of surface acoustic waves with light beams in semiconductor based photonic structures. We address the generation of surface acoustic wave modes in these structures as well as the technological aspects related to control of the propagation and spatial distribution of the acoustic fields. The microscopic mechanisms responsible for the interaction between light and surface acoustic modes in different structures are then reviewed. Particular emphasis is given to the acousto-optical interaction in semiconductor microcavities and its application in photon control. These structures exhibit high optical modulation levels under acoustic excitation and are compatible with integrated light sources and detectors

Strong Energy-momentum Dispersion of Phonon Dressed Carriers in the Lightly Doped Band Insulator SrTiO3

International Nuclear Information System (INIS)

Meevasana, Warawat

2010-01-01

Much progress has been made recently in the study of the effects of electron-phonon (el-ph) coupling in doped insulators using angle resolved photoemission (ARPES), yielding evidence for the dominant role of el-ph interactions in underdoped cuprates. As these studies have been limited to doped Mott insulators, the important question arises how this compares with doped band insulators where similar el-ph couplings should be at work. The archetypical case is the perovskite SrTiO 3 (STO), well known for its giant dielectric constant of 10000 at low temperature, exceeding that of La 2 CuO 4 by a factor of 500. Based on this fact, it has been suggested that doped STO should be the archetypical bipolaron superconductor. Here we report an ARPES study from high-quality surfaces of lightly doped SrTiO 3 . Comparing to lightly doped Mott insulators, we find the signatures of only moderate electron-phonon coupling: a dispersion anomaly associated with the low frequency optical phonon with a λ(prime) ∼ 0.3 and an overall bandwidth renormalization suggesting an overall λ(prime) ∼ 0.7 coming from the higher frequency phonons. Further, we find no clear signatures of the large pseudogap or small polaron phenomena. These findings demonstrate that a large dielectric constant itself is not a good indicator of el-ph coupling and highlight the unusually strong effects of the el-ph coupling in doped Mott insulators.

Real-Time Observation of Exciton-Phonon Coupling Dynamics in Self-Assembled Hybrid Perovskite Quantum Wells.

Science.gov (United States)

Ni, Limeng; Huynh, Uyen; Cheminal, Alexandre; Thomas, Tudor H; Shivanna, Ravichandran; Hinrichsen, Ture F; Ahmad, Shahab; Sadhanala, Aditya; Rao, Akshay

2017-11-28

Self-assembled hybrid perovskite quantum wells have attracted attention due to their tunable emission properties, ease of fabrication, and device integration. However, the dynamics of excitons in these materials, especially how they couple to phonons, remains an open question. Here, we investigate two widely used materials, namely, butylammonium lead iodide (CH 3 (CH 2 ) 3 NH 3 ) 2 PbI 4 and hexylammonium lead iodide (CH 3 (CH 2 ) 5 NH 3 ) 2 PbI 4 , both of which exhibit broad photoluminescence tails at room temperature. We performed femtosecond vibrational spectroscopy to obtain a real-time picture of the exciton-phonon interaction and directly identified the vibrational modes that couple to excitons. We show that the choice of the organic cation controls which vibrational modes the exciton couples to. In butylammonium lead iodide, excitons dominantly couple to a 100 cm -1 phonon mode, whereas in hexylammonium lead iodide, excitons interact with phonons with frequencies of 88 and 137 cm -1 . Using the determined optical phonon energies, we analyzed photoluminescence broadening mechanisms. At low temperatures (photoluminescence line shape observed in hybrid perovskite quantum wells and provide insights into the mechanism of exciton-phonon coupling in these materials.

Normal processes of phonon-phonon scattering and thermal conductivity of germanium crystals with isotopic disorder

CERN Document Server

Kuleev, I G

2001-01-01

The effect of normal processes of the phonon-phonon scattering on the thermal conductivity of the germanium crystals with various isotopic disorder degrees is considered. The phonon pulse redistribution in the normal scattering processes both inside each oscillatory branch (the Simons mechanism) and between various phonon oscillatory branches (the Herring mechanism) is accounted for. The contributions of the longitudinal and cross-sectional phonons drift motion into the thermal conductivity are analyzed. It is shown that the pulse redistribution in the Herring relaxation mechanism leads to essential suppression of the longitudinal phonons drift motion in the isotopically pure germanium crystals. The calculations results of thermal conductivity for the Herring relaxation mechanism agree well with experimental data on the germanium crystals with various isotopic disorder degrees

Optical switches based on surface plasmons

International Nuclear Information System (INIS)

Chen Cong; Wang Pei; Yuan Guanghui; Wang Xiaolei; Min Changjun; Deng Yan; Lu Yonghua; Ming Hai

2008-01-01

Great attention is being paid to surface plasmons (SPs) because of their potential applications in sensors, data storage and bio-photonics. Recently, more and more optical switches based on surface plasmon effects have been demonstrated either by simulation or experimentally. This article describes the principles, advantages and disadvantages of various types of optical switches based on SPs, in particular the all-optical switches. (authors)

Inelastic vibrational bulk and surface losses of swift electrons in ionic nanostructures

Science.gov (United States)

Hohenester, Ulrich; Trügler, Andreas; Batson, Philip E.; Lagos, Maureen J.

2018-04-01

In a recent paper [Lagos et al., Nature (London) 543, 533 (2017), 10.1038/nature21699] we have used electron energy loss spectroscopy with sub-10 meV energy and atomic spatial resolution to map optical and acoustic, bulk and surface vibrational modes in magnesium oxide nanocubes. We found that a local dielectric description works well for the simulation of aloof geometries, similar to related work for surface plasmons and surface plasmon polaritons, while for intersecting geometries such a description fails to reproduce the rich spectral features associated with excitation of bulk acoustic and optical phonons. To account for scatterings with a finite momentum exchange, in this paper we investigate molecular and lattice dynamics simulations of bulk losses in magnesium-oxide nanocubes using a rigid-ion description and investigate the loss spectra for intersecting electron beams. From our analysis we can evaluate the capability of electron energy loss spectroscopy for the investigation of phonon modes at the nanoscale, and we discuss shortcomings of our simplified approach as well as directions for future investigations.

Interaction between confined phonons and photons in periodic silicon resonators

Science.gov (United States)

Iskandar, A.; Gwiazda, A.; Younes, J.; Kazan, M.; Bruyant, A.; Tabbal, M.; Lerondel, G.

2018-03-01

In this paper, we demonstrate that phonons and photons of different momenta can be confined and interact with each other within the same nanostructure. The interaction between confined phonons and confined photons in silicon resonator arrays is observed by means of Raman scattering. The Raman spectra from large arrays of dielectric silicon resonators exhibited Raman enhancement accompanied with a downshift and broadening. The analysis of the Raman intensity and line shape using finite-difference time-domain simulations and a spatial correlation model demonstrated an interaction between photons confined in the resonators and phonons confined in highly defective regions prompted by the structuring process. It was shown that the Raman enhancement is due to collective lattice resonance inducing field confinement in the resonators, while the spectra downshift and broadening are signatures of the relaxation of the phonon wave vector due to phonon confinement in defective regions located in the surface layer of the Si resonators. We found that as the resonators increase in height and their shape becomes cylindrical, the amplitude of their coherent oscillation increases and hence their ability to confine the incoming electric field increases.

Modulation of electromagnetic local density of states by coupling of surface phonon-polariton

Science.gov (United States)

Li, Yao; Zhang, Chao-Jie; Wang, Tong-Biao; Liu, Jiang-Tao; Yu, Tian-Bao; Liao, Qing-Hua; Liu, Nian-Hua

2017-02-01

We studied the electromagnetic local density of state (EM-LDOS) near the surface of a one-dimensional multilayer structure (1DMS) alternately stacked by SiC and Si. EM-LDOS of a semi-infinite bulk appears two intrinsic peaks due to the resonance of surface phonon-polariton (SPhP) in SiC. In contrast with that of SiC bulk, SPhP can exist at the interface of SiC and Si for the 1DMS. The SPhPs from different interfaces can couple together, which can lead to a significant modulation of EM-LDOS. When the component widths of 1DMS are large, the spectrum of EM-LDOS exhibits oscillation behavior in the frequency regime larger than the resonance frequency of SPhP. While the component widths are small, due to the strong coupling of SPhPs, another peak appears in the EM-LDOS spectrum besides the two intrinsic ones. And the position of the new peak move toward high frequency when the width ratio of SiC and Si increases. The influences of distance from the surfaces and period of 1DMS on EM-LDOS have also been studied in detail. The results are helpful in studying the near-field radiative heat transfer and spontaneous emission.

Optical surfacing via linear ion source

International Nuclear Information System (INIS)

Wu, Lixiang; Wei, Chaoyang; Shao, Jianda

2017-01-01

We present a concept of surface decomposition extended from double Fourier series to nonnegative sinusoidal wave surfaces, on the basis of which linear ion sources apply to the ultra-precision fabrication of complex surfaces and diffractive optics. The modified Fourier series, or sinusoidal wave surfaces, build a relationship between the fabrication process of optical surfaces and the surface characterization based on power spectral density (PSD) analysis. Also, we demonstrate that the one-dimensional scanning of linear ion source is applicable to the removal of mid-spatial frequency (MSF) errors caused by small-tool polishing in raster scan mode as well as the fabrication of beam sampling grating of high diffractive uniformity without a post-processing procedure. The simulation results show that optical fabrication with linear ion source is feasible and even of higher output efficiency compared with the conventional approach.

Optical surfacing via linear ion source

Energy Technology Data Exchange (ETDEWEB)

Wu, Lixiang, E-mail: wulx@hdu.edu.cn [Key Lab of RF Circuits and Systems of Ministry of Education, Zhejiang Provincial Key Lab of LSI Design, Microelectronics CAD Center, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou (China); Wei, Chaoyang, E-mail: siomwei@siom.ac.cn [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Shao, Jianda, E-mail: jdshao@siom.ac.cn [Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

2017-04-15

We present a concept of surface decomposition extended from double Fourier series to nonnegative sinusoidal wave surfaces, on the basis of which linear ion sources apply to the ultra-precision fabrication of complex surfaces and diffractive optics. The modified Fourier series, or sinusoidal wave surfaces, build a relationship between the fabrication process of optical surfaces and the surface characterization based on power spectral density (PSD) analysis. Also, we demonstrate that the one-dimensional scanning of linear ion source is applicable to the removal of mid-spatial frequency (MSF) errors caused by small-tool polishing in raster scan mode as well as the fabrication of beam sampling grating of high diffractive uniformity without a post-processing procedure. The simulation results show that optical fabrication with linear ion source is feasible and even of higher output efficiency compared with the conventional approach.

Phonon self-energy corrections to non-zero wavevector phonon modes in single-layer graphene

Science.gov (United States)

Araujo, Paulo; Mafra, Daniela; Sato, Kentaro; Saito, Richiiro; Kong, Jing; Dresselhaus, Mildred

2012-02-01

Phonon self-energy corrections have mostly been studied theoretically and experimentally for phonon modes with zone-center (q = 0) wave-vectors. Here, gate-modulated Raman scattering is used to study phonons of a single layer of graphene (1LG) in the frequency range from 2350 to 2750 cm-1, which shows the G* and the G'-band features originating from a double-resonant Raman process with q 0. The observed phonon renormalization effects are different from what is observed for the zone-center q = 0 case. To explain our experimental findings, we explored the phonon self-energy for the phonons with non-zero wave-vectors (q 0) in 1LG in which the frequencies and decay widths are expected to behave oppositely to the behavior observed in the corresponding zone-center q = 0 processes. Within this framework, we resolve the identification of the phonon modes contributing to the G* Raman feature at 2450 cm-1 to include the iTO+LA combination modes with q 0 and the 2iTO overtone modes with q = 0, showing both to be associated with wave-vectors near the high symmetry point K in the Brillouin zone.

Phonon and magnon scattering of Bi{sub 2}Fe{sub 4}O{sub 9} ceramic

Energy Technology Data Exchange (ETDEWEB)

Sharma, Poorva, E-mail: vdinesh33@rediffmail.com, E-mail: vdinesh33@rediffmail.com; Kumar, Ashwini, E-mail: vdinesh33@rediffmail.com, E-mail: vdinesh33@rediffmail.com; Varshney, Dinesh, E-mail: vdinesh33@rediffmail.com, E-mail: vdinesh33@rediffmail.com [School of Physics, Vigyan Bhawan, Devi Ahilya University, Khandwa Road Campus, Indore-452001 (India)

2014-04-24

We report the phonon structure of Bi{sub 2}Fe{sub 4}O{sub 9} ceramics as synthesized by solid-state reaction route. Rietveld refined X-ray diffraction patterns confirmed the formation of single-phase perovskite structure and all the peaks of Bi{sub 2}Fe{sub 4}O{sub 9} perfectly indexed to the orthorhombic (space group Pbam). Raman scattering measurements identifies 12A{sub g}+1B{sub 2g}+1B{sub 3g} Raman active optical phonon modes. Apart from phonon scattering, mode at 470 cm{sup −1} is observed which is due to magnon scattering. The P-E loop infers paraelectric nature of Bi{sub 2}Fe{sub 4}O{sub 9}.

A first principle study for the comparison of phonon dispersion of armchair carbon and silicon nanotubes

International Nuclear Information System (INIS)

Chandel, Surjeet Kumar; Kumar, Arun; Bharti, Ankush; Sharma, Raman

2015-01-01

Using first principles density functional theoretical calculations, the present paper reports a systematic study of phonon dispersion curves in pristine carbon (CNT) and silicon nanotubes (SiNT) having chirality (6,6) in the armchair configuration. Some of the phonon modes are found to have negative frequencies which leads to instability of the systems under study. The number of phonon branches has been found to be thrice as much as the number of atoms. The frequency of the higher optical bands varies from 1690 to 1957 cm −1 for CNT(6,6) while it is 596 to 658 cm −1 for SiNT

Phonons: Theory and experiments II. Volume 2

International Nuclear Information System (INIS)

Bruesch, P.

1986-01-01

The present second volume titled as ''Phonons: Theory and Experiments II'', contains, a thorough study of experimental techniques and the interpretation of experimental results. This three-volume set tries to bridge the gap between theory and experiment, and is addressed to those working in both camps in the vast field of dynamical properties of solids. Topics presented in the second volume include; infrared-, Raman and Brillouin spectroscopy, interaction of X-rays with phonons, and inelastic neutron scattering. In addition an account is given of some other techniques, including ultrasonic methods, inelastic electron tunneling spectroscopy, point contact spectroscopy, and spectroscopy of surface phonons, thin films and adsorbates. Both experimental aspects and theoretical concepts necessary for the interpretation of experimental data are discussed. An attempt is made to present the descriptive as well as the analytical aspects of the topics. Simple models are often used to illustrate the basic concepts and more than 100 figures are included to illustrate both theoretical and experimental results. Many chapters contain a number of problems with hints and results giving additional information

Phonon number measurements using single photon opto-mechanics

International Nuclear Information System (INIS)

Basiri-Esfahani, S; Akram, U; Milburn, G J

2012-01-01

We describe a system composed of two coupled optical cavity modes with a coupling modulated by a bulk mechanical resonator. In addition, one of the cavity modes is irreversibly coupled to a single photon source. Our scheme is an opto-mechanical realization of the Jaynes–Cummings model where the qubit is a dual rail optical qubit while the bosonic degree of freedom is a matter degree of freedom realized as the bulk mechanical excitation. We show the possibility of engineering phonon number states of the mechanical oscillator in such a system by computing the conditional state of the mechanics after successive photon counting measurements. (paper)

Observation of band gaps in the gigahertz range and deaf bands in a hypersonic aluminum nitride phononic crystal slab

Science.gov (United States)

Gorisse, M.; Benchabane, S.; Teissier, G.; Billard, C.; Reinhardt, A.; Laude, V.; Defaÿ, E.; Aïd, M.

2011-06-01

We report on the observation of elastic waves propagating in a two-dimensional phononic crystal composed of air holes drilled in an aluminum nitride membrane. The theoretical band structure indicates the existence of an acoustic band gap centered around 800 MHz with a relative bandwidth of 6.5% that is confirmed by gigahertz optical images of the surface displacement. Further electrical measurements and computation of the transmission reveal a much wider attenuation band that is explained by the deaf character of certain bands resulting from the orthogonality of their polarization with that of the source.

Interfacial phonon scattering and transmission loss in >1 μm thick silicon-on-insulator thin films

Science.gov (United States)

Jiang, Puqing; Lindsay, Lucas; Huang, Xi; Koh, Yee Kan

2018-05-01

Scattering of phonons at boundaries of a crystal (grains, surfaces, or solid/solid interfaces) is characterized by the phonon wavelength, the angle of incidence, and the interface roughness, as historically evaluated using a specularity parameter p formulated by Ziman [Electrons and Phonons (Clarendon Press, Oxford, 1960)]. This parameter was initially defined to determine the probability of a phonon specularly reflecting or diffusely scattering from the rough surface of a material. The validity of Ziman's theory as extended to solid/solid interfaces has not been previously validated. To better understand the interfacial scattering of phonons and to test the validity of Ziman's theory, we precisely measured the in-plane thermal conductivity of a series of Si films in silicon-on-insulator (SOI) wafers by time-domain thermoreflectance (TDTR) for a Si film thickness range of 1-10 μm and a temperature range of 100-300 K. The Si /SiO2 interface roughness was determined to be 0.11 ±0.04 nm using transmission electron microscopy (TEM). Furthermore, we compared our in-plane thermal conductivity measurements to theoretical calculations that combine first-principles phonon transport with Ziman's theory. Calculations using Ziman's specularity parameter significantly overestimate values from the TDTR measurements. We attribute this discrepancy to phonon transmission through the solid/solid interface into the substrate, which is not accounted for by Ziman's theory for surfaces. The phonons that are specularly transmitted into an amorphous layer will be sufficiently randomized by the time they come back to the crystalline Si layer, the effect of which is practically equivalent to a diffuse reflection at the interface. We derive a simple expression for the specularity parameter at solid/amorphous interfaces and achieve good agreement between calculations and measurement values.

Blue and red shifted temperature dependence of implicit phonon shifts in graphene

Science.gov (United States)

Mann, Sarita; Jindal, V. K.

2017-07-01

We have calculated the implicit shift for various modes of frequency in a pure graphene sheet. Thermal expansion and Grüneisen parameter which are required for implicit shift calculation have already been studied and reported. For this calculation, phonon frequencies are obtained using force constants derived from dynamical matrix calculated using VASP code where the density functional perturbation theory (DFPT) is used in interface with phonopy software. The implicit phonon shift shows an unusual behavior as compared to the bulk materials. The frequency shift is large negative (red shift) for ZA and ZO modes and the value of negative shift increases with increase in temperature. On the other hand, blue shift arises for all other longitudinal and transverse modes with a similar trend of increase with increase in temperature. The q dependence of phonon shifts has also been studied. Such simultaneous red and blue shifts in transverse or out plane modes and surface modes, respectively leads to speculation of surface softening in out of plane direction in preference to surface melting.

Ballistic phonon transport in holey silicon.

Science.gov (United States)

Lee, Jaeho; Lim, Jongwoo; Yang, Peidong

2015-05-13

When the size of semiconductors is smaller than the phonon mean free path, phonons can carry heat with no internal scattering. Ballistic phonon transport has received attention for both theoretical and practical aspects because Fourier's law of heat conduction breaks down and the heat dissipation in nanoscale transistors becomes unpredictable in the ballistic regime. While recent experiments demonstrate room-temperature evidence of ballistic phonon transport in various nanomaterials, the thermal conductivity data for silicon in the length scale of 10-100 nm is still not available due to experimental challenges. Here we show ballistic phonon transport prevails in the cross-plane direction of holey silicon from 35 to 200 nm. The thermal conductivity scales linearly with the length (thickness) even though the lateral dimension (neck) is as narrow as 20 nm. We assess the impact of long-wavelength phonons and predict a transition from ballistic to diffusive regime using scaling models. Our results support strong persistence of long-wavelength phonons in nanostructures and are useful for controlling phonon transport for thermoelectrics and potential phononic applications.

Far-infrared phonon spectroscopy of Pb1-xMn xTe layers grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Romcevic, N.; Nadolny, A.J.; Romcevic, M.; Story, T.; Taliashvili, B.; Milutinovic, A.; Trajic, J.; Lusakowska, E.; Vasiljevic-Radovic, D.; Domukhovski, V.; Osinniy, V.; Hadzic, B.; Dziawa, P.

2007-01-01

In this paper we used far-infrared spectroscopy, reflection high energy electron diffraction (RHEED), X-ray diffraction and atomic force microscopy (AFM) to investigate structural and optical properties of Pb 1-x Mn x Te layers grown by molecular beam epitaxy (MBE). A numerical model for calculating the reflectivity coefficient for complex systems which include films, buffer layer and substrate has been applied. The infrared reflectivity spectra consist of Pb 1-x Mn x Te phonons, which exhibit intermediate one-two mode behavior, and MnTe phonons. A good agreement between calculated and experimental spectra is achieved. We registered the local distribution of Mn impurities depending on substrate type. For films growth on BaF 2 substrate we registered the orthorhombic local structure of MnTe clusters, while in the case of KCl substrate this structure is cubic. The Pb 1-x Mn x Te long wavelength optical phonons were described by the modified Genzel's model

Modeling of phonon heat transfer in spherical segment of silica aerogel grains

Energy Technology Data Exchange (ETDEWEB)

Han, Ya-Fen; Xia, Xin-Lin, E-mail: xiaxl@hit.edu.cn; Tan, He-Ping, E-mail: tanheping@hit.edu.cn; Liu, Hai-Dong

2013-07-01

Phonon heat transfer in spherical segment of nano silica aerogel grains is investigated by the lattice Boltzmann method (LBM). For various sizes of grains, the temperature distribution and the thermal conductivity are obtained by the numerical simulation, in which the size effects of the gap surface are also considered. The results indicate that the temperature distribution in the silica aerogel grain depends strongly on the size. Both the decreases in the diameter of spherical segment and the ratio of the diameter of gap surface to the diameter of spherical segment reduce its effective thermal conductivity obviously. In addition, the phonon scattering at the boundary surfaces becomes more prominent when grain size decreases.

Modeling of phonon heat transfer in spherical segment of silica aerogel grains

International Nuclear Information System (INIS)

Han, Ya-Fen; Xia, Xin-Lin; Tan, He-Ping; Liu, Hai-Dong

2013-01-01

Phonon heat transfer in spherical segment of nano silica aerogel grains is investigated by the lattice Boltzmann method (LBM). For various sizes of grains, the temperature distribution and the thermal conductivity are obtained by the numerical simulation, in which the size effects of the gap surface are also considered. The results indicate that the temperature distribution in the silica aerogel grain depends strongly on the size. Both the decreases in the diameter of spherical segment and the ratio of the diameter of gap surface to the diameter of spherical segment reduce its effective thermal conductivity obviously. In addition, the phonon scattering at the boundary surfaces becomes more prominent when grain size decreases

Phonon dispersion in vanadium

International Nuclear Information System (INIS)

Ivanov, A.S.; Rumiantsev, A.Yu.

1999-01-01

Complete text of publication follows. Phonon dispersion curves in Vanadium metal are investigated by neutron inelastic scattering using three-axis spectrometers. Due to extremely low coherent scattering amplitude of neutrons in natural isotope mixture of vanadium the phonon frequencies could be determined in the energy range below about 15 meV. Several phonon groups were measured with the polarised neutron scattering set-up. It is demonstrated that the intensity of coherent inelastic scattering observed in the non-spin-flip channel vanishes in the spin-flip channel. The phonon density of states is measured on a single crystal keeping the momentum transfer equal to a vector of reciprocal lattice where the coherent inelastic scattering is suppressed. Phonon dispersion curves in vanadium, as measured by neutron and earlier by X-ray scattering, are described in frames of a charge-fluctuation model involving monopolar and dipolar degrees of freedom. The model parameters are compared for different transition metals with body-centred cubic-structure. (author)

Quantum Control of a Nitrogen-Vacancy Center using Surface Acoustic Waves in the Resolved Sideband Limit

Science.gov (United States)

Golter, David; Oo, Thein; Amezcua, Maira; Wang, Hailin

Micro-electromechanical systems research is producing increasingly sophisticated tools for nanophononic applications. Such technology is well-suited for achieving chip-based, integrated acoustic control of solid-state quantum systems. We demonstrate such acoustic control in an important solid-state qubit, the diamond nitrogen-vacancy (NV) center. Using an interdigitated transducer to generate a surface acoustic wave (SAW) field in a bulk diamond, we observe phonon-assisted sidebands in the optical excitation spectrum of a single NV center. This exploits the strong strain sensitivity of the NV excited states. The mechanical frequencies far exceed the relevant optical linewidths, reaching the resolved-sideband regime. This enables us to use the SAW field for driving Rabi oscillations on the phonon-assisted optical transition. These results stimulate the further integration of SAW-based technologies with the NV center system.

LA phonons scattering of surface electrons in Bi{sub 2}Se{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Huang, Lang-Tao [State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084 (China); Zhu, Bang-Fen [State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China and Institute of Advanced Study, Tsinghua University, Beijing 100084 (China)

2013-12-04

Within the Boltzmann equation formalism we evaluate the transport relaxation time of Dirac surface states (SSs) in the typical topological insulator(TI) Bi{sub 2}Se{sub 3} due to the phonon scattering. We find that although the back-scattering of the SSs in TIs is strictly forbidden, the in-plane scattering between SSs in 3-dimensional TIs is allowed, maximum around the right-angle scattering. Thus the topological property of the SSs only reduces the scattering rate to its one half approximately. Besides, the larger LA deformation potential and lower sound velocity of Bi{sub 2}Se{sub 3} enhance the scattering rate significantly. Compared with the Dirac electrons in graphene, we find the scattering rate of SSs in Bi{sub 2}Se{sub 3} are two orders of magnitudes larger, which agree with the recent transport experiments.

Electron-phonon interaction and scattering in Si and Ge: Implications for phonon engineering

International Nuclear Information System (INIS)

Tandon, Nandan; Albrecht, J. D.; Ram-Mohan, L. R.

2015-01-01

We report ab-initio results for electron-phonon (e-ph) coupling and display the existence of a large variation in the coupling parameter as a function of electron and phonon dispersion. This variation is observed for all phonon modes in Si and Ge, and we show this for representative cases where the initial electron states are at the band gap edges. Using these e-ph matrix elements, which include all possible phonon modes and electron bands within a relevant energy range, we evaluate the imaginary part of the electron self-energy in order to obtain the associated scattering rates. The temperature dependence is seen through calculations of the scattering rates at 0 K and 300 K. The results provide a basis for understanding the impacts of phonon scattering vs. orientation and geometry in the design of devices, and in analysis of transport phenomena. This provides an additional tool for engineering the transfer of energy from carriers to the lattice

Origin of the "waterfall" effect in phonon dispersion of relaxor perovskites.

Science.gov (United States)

Hlinka, J; Kamba, S; Petzelt, J; Kulda, J; Randall, C A; Zhang, S J

2003-09-05

We have undertaken an inelastic neutron scattering study of the perovskite relaxor ferroelectric Pb(Zn(1/3)Nb(2/3))O3 with 8% PbTiO3 (PZN-8%PT) in order to elucidate the origin of the previously reported unusual kink on the low frequency transverse phonon dispersion curve (known as the "waterfall effect"). We show that its position (q(wf)) depends on the choice of the Brillouin zone and that the relation of q(wf) to the size of the polar nanoregions is highly improbable. The waterfall phenomenon is explained in the framework of a simple model of coupled damped harmonic oscillators representing the acoustic and optic phonon branches.

Phonon assisted electronic transition in telluric acid ammonium phosphate single crystals

Science.gov (United States)

El-Muraikhi, M.; Kassem, M. E.; Al-Houty, L.

The effect of gamma-irradiation on the absorption optical spectra of telluric acid ammonium phosphate single crystals (TAAP) has been studied, in the wave length of 200-600 nm, for samples irradiated by various doses up to 10 Mrad. The results show that the electron phonon coupling constant increases with the irradiation dose.

Nonlinear electron-phonon heat exchange

International Nuclear Information System (INIS)

Woods, L.M.; Mahan, G.D.

1998-01-01

A calculation of the energy exchange between phonons and electrons is done for a metal at very low temperatures. We consider the energy exchange due to two-phonon processes. Second-order processes are expected to be important at temperatures less than 1 K. We include two different second-order processes: (i) the Compton-like scattering of phonons, and (ii) the electron-dual-phonon scattering from the second-order electron-phonon interaction. It is found that the Compton-like process contains a singular energy denominator. The singularity is removed by introducing quasiparticle damping. For pure metals we find that the energy exchange depends upon the lifetime of the electrons and it is proportional to the temperature of the lattice as T L 8 . The same calculation is performed for the electron-dual-phonon scattering and it is found that the temperature dependence is T L 9 . The results can be applied to quantum dot refrigerators. copyright 1998 The American Physical Society

Optical microtopographic inspection of asphalt pavement surfaces

Science.gov (United States)

Costa, Manuel F. M.; Freitas, E. F.; Torres, H.; Cerezo, V.

2017-08-01

Microtopographic and rugometric characterization of surfaces is routinely and effectively performed non-invasively by a number of different optical methods. Rough surfaces are also inspected using optical profilometers and microtopographer. The characterization of road asphalt pavement surfaces produced in different ways and compositions is fundamental for economical and safety reasons. Having complex structures, including topographically with different ranges of form error and roughness, the inspection of asphalt pavement surfaces is difficult to perform non-invasively. In this communication we will report on the optical non-contact rugometric characterization of the surface of different types of road pavements performed at the Microtopography Laboratory of the Physics Department of the University of Minho.

Self-consistency in the phonon space of the particle-phonon coupling model

Science.gov (United States)

Tselyaev, V.; Lyutorovich, N.; Speth, J.; Reinhard, P.-G.

2018-04-01

In the paper the nonlinear generalization of the time blocking approximation (TBA) is presented. The TBA is one of the versions of the extended random-phase approximation (RPA) developed within the Green-function method and the particle-phonon coupling model. In the generalized version of the TBA the self-consistency principle is extended onto the phonon space of the model. The numerical examples show that this nonlinear version of the TBA leads to the convergence of results with respect to enlarging the phonon space of the model.

Lattice instability and soft phonons in single-crystal La/sub 2-//sub x/Sr/sub x/CuO4

International Nuclear Information System (INIS)

Boeni, P.; Axe, J.D.; Shirane, G.

1988-01-01

The dispersion of the low-lying phonon branches of several doped and undoped single crystals of La/sub 2-//sub x/Sr/sub x/CuO 4 have been investigated by using inelastic-neutron-scattering techniques. The zone-center modes are in good agreement with Raman measurements. The reported peaks in the phonon density of states show up at energies that correspond to extrema in the dispersion curves of the transverse and longitudinal acoustic branches near the zone boundary. The tetragonal-to-orthorhombic phase transition is caused by a softening of transverse-optic-phonon mode at the X point. The rotational nature of the soft mode leads to moderate weak electron-phonon coupling and the mode is unlikely to enhance significantly conventional phonon mediated superconductivity. We did not observe any evidence for the predicted breathing-mode instability near the zone boundary

Theory of generation of angular momentum of phonons by heat current and its conversion to spins

Science.gov (United States)

Hamada, Masato; Murakami, Shuichi

Spin-rotation coupling in crystals will enable us to convert between spin current and mechanical rotations, as has been studied in surface acoustic waves, in liquid metals, and in carbon nanotubes. In this presentation we focus on angular momentum of phonons. In nonmagnetic crystals without inversion symmetry, we theoretically demonstrate that phonon modes generally have angular momenta depending on their wave vectors. In equilibrium the sum of the angular momenta is zero. On the other hand, if a heat current flows in the crystal, nonequilibrium phonon distribution leads to nonzero total angular momentum of phonons. It can be observed as a rotation of crystal itself, and as a spin current induced by these phonons via the spin-rotation coupling.

Anharmonic vibrational properties in periodic systems: energy, electron-phonon coupling, and stress

OpenAIRE

Monserrat, Bartomeu; Drummond, N. D.; Needs, R. J.

2013-01-01

A unified approach is used to study vibrational properties of periodic systems with first-principles methods and including anharmonic effects. Our approach provides a theoretical basis for the determination of phonon-dependent quantities at finite temperatures. The low-energy portion of the Born-Oppenheimer energy surface is mapped and used to calculate the total vibrational energy including anharmonic effects, electron-phonon coupling, and the vibrational contribution to the stress tensor. W...

Isotopic effects on phonon anharmonicity in layered van der Waals crystals: Isotopically pure hexagonal boron nitride

Science.gov (United States)

Cuscó, Ramon; Artús, Luis; Edgar, James H.; Liu, Song; Cassabois, Guillaume; Gil, Bernard

2018-04-01

Hexagonal boron nitride (h -BN) is a layered crystal that is attracting a great deal of attention as a promising material for nanophotonic applications. The strong optical anisotropy of this crystal is key to exploit polaritonic modes for manipulating light-matter interactions in 2D materials. h -BN has also great potential for solid-state neutron detection and neutron imaging devices, given the exceptionally high thermal neutron capture cross section of the boron-10 isotope. A good knowledge of phonons in layered crystals is essential for harnessing long-lived phonon-polariton modes for nanophotonic applications and may prove valuable for developing solid-state 10BN neutron detectors with improved device architectures and higher detection efficiencies. Although phonons in graphene and isoelectronic materials with a similar hexagonal layer structure have been studied, the effect of isotopic substitution on the phonons of such lamellar compounds has not been addressed yet. Here we present a Raman scattering study of the in-plane high-energy Raman active mode on isotopically enriched single-crystal h -BN. Phonon frequency and lifetime are measured in the 80-600-K temperature range for 10B-enriched, 11B-enriched, and natural composition high quality crystals. Their temperature dependence is explained in the light of perturbation theory calculations of the phonon self-energy. The effects of crystal anisotropy, isotopic disorder, and anharmonic phonon-decay channels are investigated in detail. The isotopic-induced changes in the phonon density of states are shown to enhance three-phonon anharmonic decay channels in 10B-enriched crystals, opening the possibility of isotope tuning of the anharmonic phonon decay processes.

Spacetime representation of topological phononics

Science.gov (United States)

Deymier, Pierre A.; Runge, Keith; Lucas, Pierre; Vasseur, Jérôme O.

2018-05-01

Non-conventional topology of elastic waves arises from breaking symmetry of phononic structures either intrinsically through internal resonances or extrinsically via application of external stimuli. We develop a spacetime representation based on twistor theory of an intrinsic topological elastic structure composed of a harmonic chain attached to a rigid substrate. Elastic waves in this structure obey the Klein–Gordon and Dirac equations and possesses spinorial character. We demonstrate the mapping between straight line trajectories of these elastic waves in spacetime and the twistor complex space. The twistor representation of these Dirac phonons is related to their topological and fermion-like properties. The second topological phononic structure is an extrinsic structure composed of a one-dimensional elastic medium subjected to a moving superlattice. We report an analogy between the elastic behavior of this time-dependent superlattice, the scalar quantum field theory and general relativity of two types of exotic particle excitations, namely temporal Dirac phonons and temporal ghost (tachyonic) phonons. These phonons live on separate sides of a two-dimensional frequency space and are delimited by ghost lines reminiscent of the conventional light cone. Both phonon types exhibit spinorial amplitudes that can be measured by mapping the particle behavior to the band structure of elastic waves.

Phonon contribution to quasiparticle lifetimes in Cu measured by angle-resolved photoemission

International Nuclear Information System (INIS)

McDougall, B.A.; Balasubramanian, T.; Jensen, E.

1995-01-01

The line shape of the photoelectron spectrum emitted from the sp-derived surface state at bar Γ on Cu(111) is investigated. The line shape is Lorentzian, and the temperature dependence of the width is linear, varying from 30 meV at 30 K to 75 meV at 625 K. Less than 5-meV variation with binding energy is observed. The temperature dependence is explained as the phonon contribution to the inverse hole lifetime, predicted to be 2πλk b T allowing the determination that the electron-phonon mass enhancement parameter λ=0.14±0.02 for this surface state at bar Γ. This is compared to λ=0.15 reported as an average over the bulk Fermi surface

Phononic Crystal Made of Multilayered Ridges on a Substrate for Rayleigh Waves Manipulation

Directory of Open Access Journals (Sweden)

Mourad Oudich

2017-12-01

Full Text Available We present a phononic crystal to achieve efficient manipulation of surface acoustic waves (SAW. The structure is made of finite phononic micro-ridges arranged periodically in a substrate surface. Each ridge is constructed by staking silicon and tungsten layers so that it behaves as one-dimensional phononic crystal which exhibits band gaps for elastic waves. The band gap allows the existence of resonance modes where the elastic energy is either confined within units in the free end of the ridge or the ones in contact with the substrate. We show that SAW interaction with localized modes in the free surface of the ridge gives rise to sharp attenuation in the SAW transmission, while the modes confined within the ridge/substrate interface cause broad band attenuations of SAW. Furthermore, we demonstrate that the coupling between the two kinds of modes within the band gap gives high SAW transmission amplitude in the form of Fano-like peaks with high quality factor. The structure could provide an interesting solution for accurate SAW control for sensing applications, for instance.

Raman spectroscopy of optical properties in CdS thin films

Directory of Open Access Journals (Sweden)

Trajić J.

2015-01-01

Full Text Available Properties of CdS thin films were investigated applying atomic force microscopy (AFM and Raman spectroscopy. CdS thin films were prepared by using thermal evaporation technique under base pressure 2 x 10-5 torr. The quality of these films was investigated by AFM spectroscopy. We apply Raman scattering to investigate optical properties of CdS thin films, and reveal existence of surface optical phonon (SOP mode at 297 cm-1. Effective permittivity of mixture were modeled by Maxwell - Garnet approximation. [Projekat Ministarstva nauke Republike Srbije, br. 45003

Glass-like phonon scattering from a spontaneous nanostructure in AgSbTe2.

Science.gov (United States)

Ma, J; Delaire, O; May, A F; Carlton, C E; McGuire, M A; VanBebber, L H; Abernathy, D L; Ehlers, G; Hong, Tao; Huq, A; Tian, Wei; Keppens, V M; Shao-Horn, Y; Sales, B C

2013-06-01

Materials with very low thermal conductivity are of great interest for both thermoelectric and optical phase-change applications. Synthetic nanostructuring is most promising for suppressing thermal conductivity through phonon scattering, but challenges remain in producing bulk samples. In crystalline AgSbTe2 we show that a spontaneously forming nanostructure leads to a suppression of thermal conductivity to a glass-like level. Our mapping of the phonon mean free paths provides a novel bottom-up microscopic account of thermal conductivity and also reveals intrinsic anisotropies associated with the nanostructure. Ground-state degeneracy in AgSbTe2 leads to the natural formation of nanoscale domains with different orderings on the cation sublattice, and correlated atomic displacements, which efficiently scatter phonons. This mechanism is general and suggests a new avenue for the nanoscale engineering of materials to achieve low thermal conductivities for efficient thermoelectric converters and phase-change memory devices.

Electron hopping and optic phonons in Eu3S4

International Nuclear Information System (INIS)

Guentherodt, G.

1981-01-01

Raman scattering on single crystals of Eu 3 S 4 does not show the allowed q=o phonon modes in the cubic phase and exhibits no new modes in the distorted low temperature phase (T 2- ions. This mode does not show any anomaly near the charge order -disorder phase transition Tsub(t)=186 K. Temperature tunable spin fluctuations associated with the temperature activated Eu 2+ → Eu 3+ electron hopping are detected in the scattering intensity, superimposed on the usual thermal spin disorder. (author)

Sound and heat revolutions in phononics

Science.gov (United States)

Maldovan, Martin

2013-11-01

The phonon is the physical particle representing mechanical vibration and is responsible for the transmission of everyday sound and heat. Understanding and controlling the phononic properties of materials provides opportunities to thermally insulate buildings, reduce environmental noise, transform waste heat into electricity and develop earthquake protection. Here I review recent progress and the development of new ideas and devices that make use of phononic properties to control both sound and heat. Advances in sonic and thermal diodes, optomechanical crystals, acoustic and thermal cloaking, hypersonic phononic crystals, thermoelectrics, and thermocrystals herald the next technological revolution in phononics.

Carrier-phonon interaction in semiconductor quantum dots

Energy Technology Data Exchange (ETDEWEB)

Seebeck, Jan

2009-03-10

In recent years semiconductor quantum dots have been studied extensively due to their wide range of possible applications, predominantly for light sources. For successful applications, efficient carrier scattering processes as well as a detailed understanding of the optical properties are of central importance. The aims of this thesis are theoretical investigations of carrier scattering processes in InGaAs/GaAs quantum dots on a quantum-kinetic basis. A consistent treatment of quasi-particle renormalizations and carrier kinetics for non-equilibrium conditions is presented, using the framework of non-equilibrium Green's functions. The focus of our investigations is the interaction of carriers with LO phonons. Important for the understanding of the scattering mechanism are the corresponding quasi-particle properties. Starting from a detailed study of quantum-dot polarons, scattering and dephasing processes are discussed for different temperature regimes. The inclusion of polaron and memory effects turns out to be essential for the description of the carrier kinetics in quantum-dot systems. They give rise to efficient scattering channels and the obtained results are in agreement with recent experiments. Furthermore, a consistent treatment of the carrier-LO-phonon and the carrier-carrier interaction is presented for the optical response of semiconductor quantum dots, both giving rise to equally important contributions to the dephasing. Beside the conventional GaAs material system, currently GaN based light sources are of high topical interest due to their wide range of possible emission frequencies. In this material additionally intrinsic properties like piezoelectric fields and strong band-mixing effects have to be considered. For the description of the optical properties of InN/GaN quantum dots a procedure is presented, where the material properties obtained from an atomistic tight-binding approach are combined with a many-body theory for non

The Role of C-axis Polarized Phonons in High Temperature Superconductors

International Nuclear Information System (INIS)

Timusk, T.; Homes, C. C.; Reichardt, W.

1995-01-01

We report on the optical conductivity of c-axis phonons in YBa 2 Cu 3 O 7-σ as a function of doping and temperature. At room temperature the frequencies and strengths of the modes are in good agreement with results from shell models based on neutron scattering. We discuss the apical oxygen mode which becomes asymmetric in underdoped materials and argue, with Burns, that the Au mode shifts from 570 cm -1 to 610 cm -1 for the two-fold coordinated copper sites in the chain layer in oxygen depleted materials. At low temperature there is a large transfer of c-axis phonon oscillator strength from O(4) apical and O (2, 3,) plane bending modes, to a very broad at 400 cm -1

Optical study of Dirac fermions and related phonon anomalies in the antiferromagnetic compound CaFeAsF

Science.gov (United States)

Xu, B.; Xiao, H.; Gao, B.; Ma, Y. H.; Mu, G.; Marsik, P.; Sheveleva, E.; Lyzwa, F.; Dai, Y. M.; Lobo, R. P. S. M.; Bernhard, C.

2018-05-01

We performed optical studies on CaFeAsF single crystals, a parent compound of the 1111-type iron-based superconductors that undergoes a structural phase transition from tetragonal to orthorhombic at Ts=121 K and a magnetic one to a spin density wave (SDW) state at TN=110 K. In the low-temperature optical conductivity spectrum, after the subtraction of a narrow Drude peak, we observe a pronounced singularity around 300 cm-1 that separates two regions of quasilinear conductivity. We outline that these characteristic absorption features are signatures of Dirac fermions, similar to what was previously reported for the BaFe2As2 system [Z.-G. Chen et al., Phys. Rev. Lett. 119, 096401 (2017), 10.1103/PhysRevLett.119.096401]. In support of this interpretation, we show that for the latter system this singular feature disappears rapidly upon electron and hole doping, as expected if it arises from a van Hove singularity in between two Dirac cones. Finally, we show that one of the infrared-active phonon modes (the Fe-As mode at 250 cm-1) develops a strongly asymmetric line shape in the SDW state and note that this behavior can be explained in terms of a strong coupling with the Dirac fermions.

On the interplay between phonon-boundary scattering and phonon-point-defect scattering in SiGe thin films

Science.gov (United States)

Iskandar, A.; Abou-Khalil, A.; Kazan, M.; Kassem, W.; Volz, S.

2015-03-01

This paper provides theoretical understanding of the interplay between the scattering of phonons by the boundaries and point-defects in SiGe thin films. It also provides a tool for the design of SiGe-based high-efficiency thermoelectric devices. The contributions of the alloy composition, grain size, and film thickness to the phonon scattering rate are described by a model for the thermal conductivity based on the single-mode relaxation time approximation. The exact Boltzmann equation including spatial dependence of phonon distribution function is solved to yield an expression for the rate at which phonons scatter by the thin film boundaries in the presence of the other phonon scattering mechanisms. The rates at which phonons scatter via normal and resistive three-phonon processes are calculated by using perturbation theories with taking into account dispersion of confined acoustic phonons in a two dimensional structure. The vibrational parameters of the model are deduced from the dispersion of confined acoustic phonons as functions of temperature and crystallographic direction. The accuracy of the model is demonstrated with reference to recent experimental investigations regarding the thermal conductivity of single-crystal and polycrystalline SiGe films. The paper describes the strength of each of the phonon scattering mechanisms in the full temperature range. Furthermore, it predicts the alloy composition and film thickness that lead to minimum thermal conductivity in a single-crystal SiGe film, and the alloy composition and grain size that lead to minimum thermal conductivity in a polycrystalline SiGe film.

CO{sub 2} INFRARED PHONON MODES IN INTERSTELLAR ICE MIXTURES

Energy Technology Data Exchange (ETDEWEB)

Cooke, Ilsa R. [Department of Chemistry, University of Virginia, McCormick Road, Charlottesville, VA 22904 (United States); Fayolle, Edith C.; Öberg, Karin I., E-mail: irc5zb@virginia.edu [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States)

2016-11-20

CO{sub 2} ice is an important reservoir of carbon and oxygen in star- and planet-forming regions. Together with water and CO, CO{sub 2} sets the physical and chemical characteristics of interstellar icy grain mantles, including desorption and diffusion energies for other ice constituents. A detailed understanding of CO{sub 2} ice spectroscopy is a prerequisite to characterize CO{sub 2} interactions with other volatiles both in interstellar ices and in laboratory experiments of interstellar ice analogs. We report laboratory spectra of the CO{sub 2} longitudinal optical (LO) phonon mode in pure CO{sub 2} ice and in CO{sub 2} ice mixtures with H{sub 2}O, CO, and O{sub 2} components. We show that the LO phonon mode position is sensitive to the mixing ratio of various ice components of astronomical interest. In the era of the James Webb Space Telescope , this characteristic could be used to constrain interstellar ice compositions and morphologies. More immediately, LO phonon mode spectroscopy provides a sensitive probe of ice mixing in the laboratory and should thus enable diffusion measurements with higher precision than has been previously possible.

In-plane confinement and waveguiding of surface acoustic waves through line defects in pillars-based phononic crystal

Directory of Open Access Journals (Sweden)

Abdelkrim Khelif

2011-12-01

Full Text Available We present a theoretical analysis of an in-plane confinement and a waveguiding of surface acoustic waves in pillars-based phononic crystal. The artificial crystal is made up of cylindrical pillars placed on a semi-infinite medium and arranged in a square array. With a well-chosen of the geometrical parameters, this pillars-based system can display two kinds of complete band gaps for guided waves propagating near the surface, a low frequency gap based on locally resonant mode of pillars as well as a higher frequency gap appearing at Bragg scattering regime. In addition, we demonstrate a waveguiding of surface acoustic wave inside an extended linear defect created by removing rows of pillars in the perfect crystal. We discuss the transmission and the polarization of such confined mode appearing in the higher frequency band gap. We highlight the strong similarity of such defect mode and the Rayleigh wave of free surface medium. An efficient finite element analysis is used to simulate the propagation of guided waves through silicon pillars on a silicon substrate.

Phonon Scattering and Confinement in Crystalline Films

Science.gov (United States)

Parrish, Kevin D.

. Removing the isotropic assumption, leading to the formulation of modal ray-tracing, corrects the mean free path distribution. The effect of phonon line-of-sight is investigated in nanoporous silicon films using free path sampling. When the line-of-sight is cut off there is a distinct change in thermal conductivity versus porosity. By analyzing the free paths of an obstructed phonon mode, it is concluded that the trend change is due to a hard upper limit on the free paths that can exist due to the nanopore geometry in the material. The transient grating technique is an optical contact-less laser based experiment for measuring the in-plane thermal diffusivity of thin films and membranes. The theory of operation and physical setup of a transient grating experiment is detailed. The procedure for extracting the thermal diffusivity from the raw experimental signal is improved upon by removing arbitrary user choice in the fitting parameters used and constructing a parameterless error minimizing procedure. The thermal conductivity of ultra-thin argon films modeled with the Lennard-Jones potential is calculated from both the Monte Carlo free path sampling technique and from explicit reduced dimensionality lattice dynamics calculations. In these ultra-thin films, the phonon properties are altered in more than a perturbative manner, referred to as the confinement regime. The free path sampling technique, which is a perturbative method, is compared to a reduced dimensionality lattice dynamics calculation where the entire film thickness is taken as the unit cell. Divergence in thermal conductivity magnitude and trend is found at few unit cell thick argon films. Although the phonon group velocities and lifetimes are affected, it is found that alterations to the phonon density of states are the primary cause of the deviation in thermal conductivity in the confinement regime.

Low frequency phononic band structures in two-dimensional arc-shaped phononic crystals

International Nuclear Information System (INIS)

Xu, Zhenlong; Wu, Fugen; Guo, Zhongning

2012-01-01

The low frequency phononic band structures of two-dimensional arc-shaped phononic crystals (APCs) were studied by the transfer matrix method in cylindrical coordinates. The results showed the first phononic band gaps (PBGs) of APCs from zero Hz with low modes. Locally resonant (LR) gaps were obtained with higher-order rotation symmetry, due to LR frequencies corresponding to the speeds of acoustic waves in the materials. These properties can be efficiently used in a structure for low frequencies that are forbidden, or in a device that permits a narrow window of frequencies. -- Highlights: ► We report a new class of quasi-periodic hetero-structures, arc-shaped phononic crystals (APCs). ► The results show the first PBGs start with zero Hz with low modes. ► Locally resonant (LR) gaps were obtained with higher-order rotation symmetry, due to LR frequencies corresponding to the speeds of acoustic waves in the materials.

Collective two-phonon states in deformed nuclei

International Nuclear Information System (INIS)

Solov'ev, V.G.; Shirikova, N.Y.

1982-01-01

The Pauli principle in the two-phonon components of the wave functions is taken into account within the framework of the quasiparticle-phonon model of the nucleus with phonon operators depending on the sign of the projection of the angular momentum. The centroid energies of collective two-phonon states in even-even deformed nuclei are calculated and it is shown that the inclusion of the Pauli principle shifts them by 1--3 MeV to higher energies. The shifts of the three-phonon poles due to the inclusion of the Pauli principle in the three-phonon components of the wave functions are calculated. Strong fragmentation of collective two-phonon states whose energy centroids are 3--5 MeV should be expected. It is concluded that collective two-phonon states need not exist in deformed nuclei. The situation with the 168 Er nucleus and the Th and U isotopes is analyzed

Phonon interference control of atomic-scale metamirrors, meta-absorbers, and heat transfer through crystal interfaces

Science.gov (United States)

Kosevich, Yu. A.; Potyomina, L. G.; Darinskii, A. N.; Strelnikov, I. A.

2018-03-01

crystal plane almost completely filled with heavy-isotope defects. We show that the phonon-interference-induced transparency can be produced by the defect nanolayer with the non-nearest-neighbor interactions, filled with two types of isotopes with relatively small difference in masses or binding force constants. In this case, relatively broad transmission antiresonance is accompanied by the narrow transmission peak close to the antiresonance frequency. We describe the softening of the flexural surface acoustic wave, localized at the embedded defect nanolayer, caused by negative surface stress in the layer. The surface wave softening results in spatially periodic static bending deformation of the embedded nanolayer with the definite wave number. The latter effect is estimated for graphene monolayer embedded in a strained matrix of polyethylene. We analyze the effect of nonlinearity in the dynamics of defect atoms on the one- and two-path phonon interference and show that the interference transmission resonances and antiresonances are shifted in frequencies but not completely suppressed by rather strong anharmonicity of interatomic bonds. The reduction of the Kapitza thermal interface conductance caused by the destructive phonon interference in a defect monolayer is described. We show that the additional relatively weak non-nearest-neighbor interactions through the defect crystal plane filled with heavy isotopes substantially reduces the interface thermal conductance, and this effect is stronger in the three-dimensional system than in the quasi-one-dimensional systems studied previously.

Phonon dispersion models for MgB{sub 2} with application of pressure

Energy Technology Data Exchange (ETDEWEB)

Alarco, Jose A., E-mail: jose.alarco@qut.edu.au; Talbot, Peter C., E-mail: p.talbot@qut.edu.au; Mackinnon, Ian D.R., E-mail: ian.mackinnon@qut.edu.au

2017-05-15

Highlights: • Ab initio DFT MgB{sub 2} phonon dispersion for pressures up to 20 GPa are presented. • Extent of E{sub 2g} phonon anomaly and thermal energy, T{sub δ,} are pressure dependent. • Phonon anomaly thermal energy equivalent to experimental T{sub c} values for MgB{sub 2}. • Computational method to measure T{sub δ} is an effective predictor of T{sub c}. - Abstract: We evaluate, via the Local Density and the Generalised Gradient Approximations to the Density Functional Theory (DFT), the change in form and extent of the E{sub 2g} phonon anomaly of MgB{sub 2} with increase in applied pressure up to 20 GPa. Ab initio DFT calculations on the phonon dispersion (PD) for MgB{sub 2} show a phonon anomaly symmetrically displaced around Γ, the reciprocal lattice origin. This anomaly is related to nesting between diametrically opposite sides of tubular elements of Fermi surfaces, which correspond to sigma bonding and run approximately parallel to the Γ–A reciprocal space direction. The anomaly is parallel to Γ–A and along Γ–M and Γ–K. The extent of the E{sub 2g} phonon anomaly, δ, along Γ–M and Γ–K is a measure of the thermal energy, T{sub δ}, that matches within error the experimental onset superconducting transition temperature, T{sub c}. Ab initio DFT calculations with pressure for −5 GPa < P < 20 GPa show a linear reduction in T{sub δ} that closely matches experimental T{sub c} values for MgB{sub 2}. For phonon-mediated superconductors with AlB{sub 2}–type structures, the thermal energy of the phonon anomaly, T{sub δ}, is a reliable predictor of T{sub c}.

Surface characterization protocol for precision aspheric optics

Science.gov (United States)

Sarepaka, RamaGopal V.; Sakthibalan, Siva; Doodala, Somaiah; Panwar, Rakesh S.; Kotaria, Rajendra

2017-10-01

In Advanced Optical Instrumentation, Aspherics provide an effective performance alternative. The aspheric fabrication and surface metrology, followed by aspheric design are complementary iterative processes for Precision Aspheric development. As in fabrication, a holistic approach of aspheric surface characterization is adopted to evaluate actual surface error and to aim at the deliverance of aspheric optics with desired surface quality. Precision optical surfaces are characterized by profilometry or by interferometry. Aspheric profiles are characterized by contact profilometers, through linear surface scans to analyze their Form, Figure and Finish errors. One must ensure that, the surface characterization procedure does not add to the resident profile errors (generated during the aspheric surface fabrication). This presentation examines the errors introduced post-surface generation and during profilometry of aspheric profiles. This effort is to identify sources of errors and is to optimize the metrology process. The sources of error during profilometry may be due to: profilometer settings, work-piece placement on the profilometer stage, selection of zenith/nadir points of aspheric profiles, metrology protocols, clear aperture - diameter analysis, computational limitations of the profiler and the software issues etc. At OPTICA, a PGI 1200 FTS contact profilometer (Taylor-Hobson make) is used for this study. Precision Optics of various profiles are studied, with due attention to possible sources of errors during characterization, with multi-directional scan approach for uniformity and repeatability of error estimation. This study provides an insight of aspheric surface characterization and helps in optimal aspheric surface production methodology.

From phonon confinement to phonon splitting in flat single nanostructures: A case of VO2@V2O5 core–shell nano-ribbons

CSIR Research Space (South Africa)

Mwakikunga, BW

2012-07-01

Full Text Available ) as explained by Eklund's group for surface phonons and (d) our own modification based on the transformation from the spherical coordinates in the Richter equation to Cartesian coordinates; the latter being in keeping with the ribbon geometry. The change...

Enhancing Optical Forces in InP-Based Waveguides

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Semenova, Elizaveta; Lavrinenko, Andrei

2017-01-01

Cantilever sensors are among the most important microelectromechanical systems (MEMS), which are usually actuated by electrostatic forces or piezoelectric elements. Although well-developed microfabrication technology has made silicon the prevailing material for MEMS, unique properties of other...... materials are overlooked in this context. Here we investigate optically induced forces exerted upon a semi-insulating InP waveguide suspended above a highly doped InP: Si substrate, in three different regimes: the epsilon-near-zero (ENZ), with excitation of surface plasmon polaritons (SPPs) and phonons...... excitation. An order of magnitude amplification of the force is observed when light is coupled to SPPs, and three orders of magnitude amplification is achieved in the phonon excitation regime. In the ENZ regime, the force is found to be repulsive and higher than that in a waveguide suspended above...

Optimizing phonon scattering by tuning surface-interdiffusion-driven intermixing to break the random-alloy limit of thermal conductivity

Science.gov (United States)

Yang, Xiaolong; Li, Wu

2018-01-01

We investigate the evolution of the cross-plane thermal conductivity κ of superlattices (SLs) as interfaces change from perfectly abrupt to totally intermixed, by using nonequilibrium molecular dynamics simulations in combination with the spectral heat current calculations. We highlight the role of surface-interdiffusion-driven intermixing by calculating the κ of SLs with changing interface roughness, whose tuning allows for κ values much lower than the "alloy limit" and the abrupt interface limit in same cases. The interplay between alloy and interface scattering in different frequency ranges provides a physical basis to predict a minimum of thermal conductivity. More specifically, we also explore how the interface roughness affects the thermal conductivities for SL materials with a broad span of atomic mass and bond strength. In particular, we find that (i) only when the "spacer" thickness of SLs increases up to a critical value, κ of rough SLs can break the corresponding "alloy limit," since SLs with different "spacer" thickness have different characteristic length of phonon transport, which is influenced by surface-interdiffusion-driven intermixing to different extend. (ii) Whether κ changes monotonically with interface roughness strongly depends on the period length and intrinsic behavior of phonon transport for SL materials. Especially, for the SL with large period length, there exists an optimal interface roughness that can minimize the thermal conductivity. (iii) Surface-interdiffusion-driven intermixing is more effective in achieving a low κ below the alloy limit for SL materials with large mass mismatch than with small one. (iv) It is possible for SL materials with large lattice mismatch (i.e., bond strength) to design an ideally abrupt interface structure with κ much below the alloy limit. These results have clear implications for optimization of thermal transport for heat management and for the development of thermoelectric materials.

Phonon dispersion and Kohn anomalies in the alloy Cu8.84Al0.16

International Nuclear Information System (INIS)

Chou, H.; Shapiro, S.M.; Moss, S.C.; Mostoller, M.

1990-01-01

The authors have made detailed measurements of phonon frequencies along all high-symmetry directions on a large single crystal of Cu 0.84 Al 0.16 at room temperature. Phonon frequencies were ascertained to better than ±0.03 meV. Inter-atomic force constants and vibrational density of states were calculated by performing a Born-von Karman analysis on the complete set of phonon dispersion curves. In contrast to the case of pure Cu, no evident Kohn anomaly (neither in the phonon dispersion itself nor in the derivatives) was observed near the expected wave vector q = 2k F . The absence of Kohn anomalies in the present system could be due either to a smeared out Fermi surface or to the possibility that the electron-electron interaction which screens the inter-ionic potential is not the dominant interaction in the system: i.e., the existence of Kohn anomalies in these alloys may depend mainly on the details of the electron-phonon interaction

Two-phonon bound states in imperfect crystals

International Nuclear Information System (INIS)

Behera, S.N.; Samsur, Sk.

1980-01-01

The question of the occurrence of two-phonon bound states in imperfect crystals is investigated. It is shown that the anharmonicity mediated two-phonon bound state which is present in perfect crystals gets modified due to the presence of impurities. Moreover, the possibility of the occurrence of a purely impurity mediated two-phonon bound state is demonstrated. The bound state frequencies are calculated using the simple Einstein oscillator model for the host phonons. The two-phonon density of states for the imperfect crystal thus obtained has peaks at the combination and difference frequencies of two host phonons besides the peaks at the bound state frequencies. For a perfect crystal the theory predicts a single peak at the two-phonon bound state frequency in conformity with experimental observations and other theoretical calculations. Experimental data on the two-phonon infrared absorption and Raman scattering from mixed crystals of Gasub(1-c)Alsub(c)P and Gesub(1-c)Sisub(c) are analysed to provide evidence in support of impurity-mediated two-phonon bound states. The relevance of the zero frequency (difference spectrum) peak to the central peak, observed in structural phase transitions, is conjectured. (author)

Electron phonon couplings in 2D perovskite probed by ultrafast photoinduced absorption spectroscopy

Science.gov (United States)

Huynh, Uyen; Ni, Limeng; Rao, Akshay

We use the time-resolved photoinduced absorption (PIA) spectroscopy with 20fs time resolution to investigate the electron phonon coupling in the self-assembled hybrid organic layered perovskite, the hexyl ammonium lead iodide compound (C6H13NH3)2 (PbI4) . The coupling results in the broadening and asymmetry of its temperature-dependence photoluminescence spectra. The exact time scale of this coupling, however, wasn't reported experimentally. Here we show that using an ultrashort excitation pulse allows us to resolve from PIA kinetics the oscillation of coherent longitudinal optical phonons that relaxes and self-traps electrons to lower energy states within 200 fs. The 200fs relaxation time is equivalent to a coupling strength of 40meV. Two coupled phonon modes are also identified as about 100 cm-1 and 300 cm-1 from the FFT spectrum of the PIA kinetics. The lower energy mode is consistent with previous reports and Raman spectrum but the higher energy one hasn't been observed before.

Splash, pop, sizzle: Information processing with phononic computing

Directory of Open Access Journals (Sweden)

Sophia R. Sklan

2015-05-01

Full Text Available Phonons, the quanta of mechanical vibration, are important to the transport of heat and sound in solid materials. Recent advances in the fundamental control of phonons (phononics have brought into prominence the potential role of phonons in information processing. In this review, the many directions of realizing phononic computing and information processing are examined. Given the relative similarity of vibrational transport at different length scales, the related fields of acoustic, phononic, and thermal information processing are all included, as are quantum and classical computer implementations. Connections are made between the fundamental questions in phonon transport and phononic control and the device level approach to diodes, transistors, memory, and logic.

Lattice dynamics and electron/phonon interactions in epitaxial transition-metal nitrides

Science.gov (United States)

Mei, Antonio Rodolph Bighetti

the films are completely dense with smooth surfaces (roughness = 1.3 nm, consistent with atomic-force microscopy analyses). Based upon temperature-dependent electronic transport measurements, epitaxial ZrN/MgO(001) layers have a room-temperature resistivity rho 300K of 12.0 muO-cm, a temperature coefficient of resistivity between 100 and 300 K of 5.6x10-8 O-cm K -1, a residual resistivity rhoo below 30 K of 0.78 muO-cm (corresponding to a residual resistivity ratio rho300K/rho 15K = 15), and the layers exhibit a superconducting transition temperature Tc = 10.4 K. The relatively high residual resistivity ratio, combined with long in-plane and out-of-plane x-ray coherence lengths, xi|| = 18 nm and xi⊥ = 161 nm, indicates high crystalline quality with low mosaicity. The reflectance of ZrN(001), as determined by variable-angle spectroscopic ellipsometry, decreases slowly from 95% at 1 eV to 90% at 2 eV with a reflectance edge at 3.04 eV. Interband transitions dominate the dielectric response above 2 eV. The ZrN(001) nanoindentation hardness and modulus are 22.7+/-1.7 and 450+/-25 GPa. Transport electron/phonon coupling parameters and Eliashberg spectral functions alphatr2F(ho) are determined for Group-IV TM nitrides TiN, ZrN, and HfN, and the rare-earth (RE) nitride CeN using an inversion procedure based upon temperature-dependent (4 electron/phonon coupling parameters lambdatr vary from 1.11 for ZrN to 0.82 for HfN, 0.73 for TiN, and 0.44 for CeN. The small variation in lambda tr among the TM nitrides and the weak coupling in CeN are consistent with measured Tc values: 10.4 (ZrN), 9.18 (HfN), 5.35 (TiN), and electron/phonon coupling in conventional superconductors. Spectral peaks in alpha2F(ho), corresponding to regions in energy-space for which electrons couple to acoustic hoac and optical ho op phonon modes, are centered at ho ac = 33 and hoop = 57 meV for TiN, 25 and 60 meV for ZrN, 18 and 64 meV for HfN, and 21 and 39 meV for CeN. The acoustic modes soften with

Squeezed Phonons: Modulating Quantum Fluctuations of Atomic Displacements.

Science.gov (United States)

Hu, Xuedong; Nori, Franco

1997-03-01

We have studied phonon squeezed states and also put forward several proposals for their generation(On phonon parametric process, X. Hu and F. Nori, Phys. Rev. Lett. 76), 2294 (1996); on polariton mechanism, X. Hu and F. Nori, Phys. Rev. B 53, 2419 (1996); on second-order Raman scattering, X. Hu and F. Nori, preprint.. Here, we compare the relative merits and limitations of these approaches, including several factors that will limit the amount of phonon squeezing. In particular, we investigate the effect of the initial thermal states on the phonon modes. Using a model for the phonon density matrix, we also study the mixing of the phonon squeezed states with thermal states, which describes the decay of the phonon coherence. Finally, we calculate the maximum possible squeezing from a phonon parametric process limited by phonon decay.

Electron-confined LO-phonon scattering in GaAs-Al0.45Ga0.55As ...

Indian Academy of Sciences (India)

resonance [17] – at high field where a longitudinal-optical (LO) phonon mediates a transition ..... This competition is controlled through the factor. Γ = γLLw ... [3] L Eaves, F W Sheard and G A T Toombs, Band structure engineering in semicon-.

Analysis of Lattice Thermal Conductivity of Si Considering the Effect of Phonon Dispersion on Three-phonon Processes

Science.gov (United States)

He, Ping; Li, Zhijian

2001-03-01

In this work we present the new relaxation time expressions considering the detailed information of the phonon dispersion. For the three-phonon processes, it is found that only limited types of three-phonon processes are allowed to occur and the attenuation of phonon that conduct heat varies roughly with the fifth power of frequency. By using these expressions, the data of thermal conductivity of bulk silicon is well fitted. And further, the data for thin films of single crystal silicon which cannot be well fitted by the widely used model that proposed by Holland is also well fitted using the new expressions for three-phonon processes and parameters got at the previous step.

Birefringent phononic structures

Directory of Open Access Journals (Sweden)

I. E. Psarobas

2014-12-01

Full Text Available Within the framework of elastic anisotropy, caused in a phononic crystal due to low crystallographic symmetry, we adopt a model structure, already introduced in the case of photonic metamaterials, and by analogy, we study the effect of birefringence and acoustical activity in a phononic crystal. In particular, we investigate its low-frequency behavior and comment on the factors which determine chirality by reference to this model.

Frontiers in optical methods nano-characterization and coherent control

CERN Document Server

Katayama, Ikufumui; Ohno, Shin-Ya

2014-01-01

This collection of reviews by leading Japanese researchers covers topics like ultrafast optical responses, terahertz and phonon studies, super-sensitive surface and high-pressure spectroscopy, combination of visible and x-ray photonics. Several related areas at the cutting edge of measurement technology and materials science are included. This book is partly based on well-cited review articles in the Japanese language in special volumes of the Journal of the Vacuum Society of Japan.

Ab initio phonon thermal transport in monolayer InSe, GaSe, GaS, and alloys

Energy Technology Data Exchange (ETDEWEB)

Pandey, Tribhuwan; Parker, David S.; Lindsay, Lucas

2017-10-17

We compare vibrational properties and phonon thermal conductivities (κ) of monolayer InSe, GaSe and GaS systems using density functional theory and Peierls-Boltzmann transport methods. In going from InSe to GaSe to GaS, system mass decreases giving both increasing acoustic phonon velocities and decreasing scattering of these heat-carrying modes with optic phonons, ultimately giving κInSe< κGaSe< κGaS. This behavior is demonstrated by correlating the scattering phase space limited by fundamental conservation conditions with mode scattering rates and phonon dispersions for each material. We also show that, unlike flat monolayer systems such as graphene, thermal transport is governed by in-plane vibrations in InSe, GaSe and GaS, similar to buckled monolayer materials such as silicene. Alloying of InSe, GaSe and GaS systems provides an effective method for modulating their κ through intrinsic vibrational modifications and phonon scattering from mass disorder giving reductions ~2-3.5 times. This disorder also suppresses phonon mean free paths in the alloy systems compared to those in their crystalline counterparts. This work provides fundamental insights of lattice thermal transport from basic vibrational properties for an interesting set of two-dimensional materials.

Goldstone-like phonon modes in a (111)-strained perovskite

Science.gov (United States)

Marthinsen, A.; Griffin, S. M.; Moreau, M.; Grande, T.; Tybell, T.; Selbach, S. M.

2018-01-01

Goldstone modes are massless particles resulting from spontaneous symmetry breaking. Although such modes are found in elementary particle physics as well as in condensed-matter systems like superfluid helium, superconductors, and magnons, structural Goldstone modes are rare. Epitaxial strain in thin films can induce structures and properties not accessible in bulk and has been intensively studied for (001)-oriented perovskite oxides. Here we predict Goldstone-like phonon modes in (111)-strained SrMn O3 by first-principles calculations. Under compressive strain the coupling between two in-plane rotational instabilities gives rise to a Mexican hat-shaped energy surface characteristic of a Goldstone mode. Conversely, large tensile strain induces in-plane polar instabilities with no directional preference, giving rise to a continuous polar ground state. Such phonon modes with U (1) symmetry could emulate structural condensed-matter Higgs modes. The mass of this Higgs boson, given by the shape of the Mexican hat energy surface, can be tuned by strain through proper choice of substrate.

Phonon dispersion and thermal conductivity of nanocrystal superlattices using three-dimensional atomistic models

International Nuclear Information System (INIS)

Zanjani, Mehdi B.; Lukes, Jennifer R.

2014-01-01

A computational study of thermal conductivity and phonon dispersion of gold nanocrystal superlattices is presented. Phonon dispersion curves, reported here for the first time from combined molecular dynamics and lattice dynamics calculations, show multiple phononic band gaps and consist of many more dispersion branches than simple atomic crystals. Fully atomistic three dimensional molecular dynamics calculations of thermal conductivity using the Green Kubo method are also performed for the first time on these materials. Thermal conductivity is observed to increase for increasing nanocrystal core size and decrease for increasing surface ligand density. Our calculations predict values in the range 0.1–1 W/m K that are consistent with reported experimental results

Quantification of the optical surface reflection and surface roughness of articular cartilage using optical coherence tomography

Energy Technology Data Exchange (ETDEWEB)

Saarakkala, Simo; Wang Shuzhe; Huang Yanping; Zheng Yongping [Department of Health Technology and Informatics, Hong Kong Polytechnic University, Hong Kong (China)], E-mail: simo.saarakkala@uku.fi, E-mail: ypzheng@ieee.org

2009-11-21

Optical coherence tomography (OCT) is a promising new technique for characterizing the structural changes of articular cartilage in osteoarthritis (OA). The calculation of quantitative parameters from the OCT signal is an important step to develop OCT as an effective diagnostic technique. In this study, two novel parameters for the quantification of optical surface reflection and surface roughness from OCT measurements are introduced: optical surface reflection coefficient (ORC), describing the amount of a ratio of the optical reflection from cartilage surface with respect to that from a reference material, and OCT roughness index (ORI) indicating the smoothness of the cartilage surface. The sensitivity of ORC and ORI to detect changes in bovine articular cartilage samples after enzymatic degradations of collagen and proteoglycans using collagenase and trypsin enzymes, respectively, was tested in vitro. A significant decrease (p < 0.001) in ORC as well as a significant increase (p < 0.001) in ORI was observed after collagenase digestion. After trypsin digestion, no significant changes in ORC or ORI were observed. To conclude, the new parameters introduced were demonstrated to be feasible and sensitive to detect typical OA-like degenerative changes in the collagen network. From the clinical point of view, the quantification of OCT measurements is of great interest since OCT probes have been already miniaturized and applied in patient studies during arthroscopy or open knee surgery in vivo. Further studies are still necessary to demonstrate the clinical capability of the introduced parameters for naturally occurring early OA changes in the cartilage.

Study of Phonon Dispersion Relations in Cuprous Oxide by Inelastic Neutron Scattering

DEFF Research Database (Denmark)

Beg, M. M.; Shapiro, S. M.

1976-01-01

Phonon dispersion relations in Cu2O have been studied at 20°C using inelastic neutron scattering. Seven acoustic branches and twelve optical branches have been studied in detail in the three symmetry directions [00ζ], [ζζ0], and [ζζζ] of the cubic lattice. Four of the six zone-center phonons have...... been observed and the assignments and energies are confirmed as Γ25=87±2 cm-1, Γ12′=105±3 cm-1, Γ15=146±1 cm-1, and Γ2′≈347 cm-1. The dispersion relations agree only qualitatively with the rigid-ion-model calculations. It is suggested that more detailed calculations may be performed in the light...

Thermoelectric power of YBa2Cu3O7-δ: Phonon drag and multiband conduction

International Nuclear Information System (INIS)

Cohn, J.L.; Wolf, S.A.; Selvamanickam, V.; Salama, K.

1991-01-01

We report measurements of the a-b-plane thermopower (S) on crystalline YBa 2 Cu 3 O 7-δ (δ≤0.16) for temperatures below 310 K. Much sharper features in the T dependence of S are observed than have been previously reported. Both the temperature and oxygen-doping dependences of S, which have caused confusion, are consistently accounted for by conventional metallic theory for the first time. Strong phonon drag and two carrier species are indicated, with holes on the planes and electrons on the chains. An anomalous, positive component to S, observed for T 2 planes and optical-mode phonons

Electron and phonon spectra in La2-xSrxCuI4+δ

International Nuclear Information System (INIS)

Nomerovannaya, L.V.; Makhnev, A.A.; Malyuk, A.N.; Bolotin, G.A.; Shtrapenin, G.L.; Ignatenkov, A.N.

1995-01-01

Ellipsometric measurements of optical constants and measurements of reflection spectra of La 2-x Sr x CuI 4+δ monocrystals were carried out. Variation of peculiarities of electron and phonon spectra at strontium doping was followed. Formulae to calculate ε dielectric permittivity tensor component on the ground of ellipsometric measurements for tetragonal and orthorhombic crystals are given. Effect of superstoichiometric oxygen content on anisotropy of La 2 CuO 4+δ optical properties was studied. 18 refs., 5 figs., 1 tab

Acoustic Phonons and Mechanical Properties of Ultra-Thin Porous Low-k Films: A Surface Brillouin Scattering Study

Science.gov (United States)

Zizka, J.; King, S.; Every, A.; Sooryakumar, R.

2018-04-01

To reduce the RC (resistance-capacitance) time delay of interconnects, a key development of the past 20 years has been the introduction of porous low-k dielectrics to replace the traditional use of SiO2. Moreover, in keeping pace with concomitant reduction in technology nodes, these low-k materials have reached thicknesses below 100 nm wherein the porosity becomes a significant fraction of the film volume. The large degree of porosity not only reduces mechanical strength of the dielectric layer but also renders a need for non-destructive approaches to measure the mechanical properties of such ultra-thin films within device configurations. In this study, surface Brillouin scattering (SBS) is utilized to determine the elastic constants, Poisson's ratio, and Young's modulus of these porous low-k SiOC:H films (˜ 25-250 nm thick) grown on Si substrates by probing surface acoustic phonons and their dispersions.

Optical properties of nitride nanostructures

Energy Technology Data Exchange (ETDEWEB)

Cantarero, A.; Cros, A.; Garro, N.; Gomez-Gomez, M.I.; Garcia, A.; Lima, M.M. de [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Daudin, B. [Departement de Recherche Fondamentale sur la Matiere Condensee, SPMM, CEA/Grenoble, 17 Rue des Martyrs, 38054 Grenoble (France); Rizzi, A.; Denker, C.; Malindretos, J. [IV. Physikalisches Institut, Georg August Universitaet Goettingen, 37073 Goettingen (Germany)

2011-01-15

In this paper we review some recent results on the optical properties of nitride nanostructures, in particular on GaN quantum dots (QDs) and InN nanocolumns (NCs). First, we will give a brief introduction on the particularities of vibrational modes of wurtzite. The GaN QDs, embedded in AlN, were grown by molecular beam epitaxy (MBE) in the Stransky-Krastanov mode on c- and a-plane 6H-SiC. We have studied the optical properties by means of photoluminescence (PL) and performed Raman scattering measurements to analyze the strain relaxation in the dots and the barrier, the effect of the internal electric fields, and the influence of specific growth parameters, like the influence of capping or the spacer on the relaxation of the QDs. A theoretical model, based on continuous elastic theory, were developed to interpret the Raman scattering results. On the other hand, InN NCs have been grown by MBE in the vapor-liquid-solid mode using Au as a catalyst. The nanocolumns have different morphology depending on the growth conditions. The optical properties can be correlated to the morphology of the samples and the best growth conditions can be selected. We observe, from the analysis of the Raman data in InN NCs, the existence of two space regions contributing to the scattering: the surface and the inner region. From the inner region, uncoupled phonon modes are clearly observed, showing the high crystal quality and the complete relaxation of the NCs (no strain). The observation of a LO-phonon-plasmon couple in the same spectra is a fingerprint of the accumulation layer predicted at the surface of the nanocolumns. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Topological chiral phonons in center-stacked bilayer triangle lattices

Science.gov (United States)

Xu, Xifang; Zhang, Wei; Wang, Jiaojiao; Zhang, Lifa

2018-06-01

Since chiral phonons were found in an asymmetric two-dimensional hexagonal lattice, there has been growing interest in the study of phonon chirality, which were experimentally verified very recently in monolayer tungsten diselenide (2018 Science 359 579). In this work, we find chiral phonons with nontrivial topology in center-stacked bilayer triangle lattices. At the Brillouin-zone corners, (), circularly polarized phonons and nonzero phonon Berry curvature are observed. Moreover, we find that the phonon chirality remain robust with changing sublattice mass ratio and interlayer coupling. The chiral phonons at the valleys are demonstrated in doubler-layer sodium chloride along the [1 1 1] direction. We believe that the findings on topological chiral phonons in triangle lattices will give guidance in the study of chiral phonons in real materials and promote the phononic applications.

Enhanced photoelastic modulation in silica phononic crystal cavities

Science.gov (United States)

Kim, Ingi; Iwamoto, Satoshi; Arakawa, Yasuhiko

2018-04-01

The enhanced photoelastic modulation in quasi-one-dimensional (1D) phononic crystal (PnC) cavities made of fused silica is experimentally demonstrated. A confined acoustic wave in the cavity can induce a large birefringence through the photoelastic effect and enable larger optical modulation amplitude at the same acoustic power. We observe a phase retardation of ∼26 mrad of light passing through the cavity when the exciting acoustic frequency is tuned to the cavity mode resonance of ∼500 kHz at 2.5 V. In the present experiment, a 16-fold enhancement of retardation in the PnC cavity is demonstrated compared with that in a bar-shaped silica structure. Spatially resolved optical retardation measurement reveals that the large retardation is realized only around the cavity reflecting the localized nature of the acoustic cavity mode. The enhanced interactions between acoustic waves and light can be utilized to improve the performance of acousto-optic devices such as photoelastic modulators.

Waveguiding in supported phononic crystal plates

International Nuclear Information System (INIS)

Vasseur, J; Hladky-Hennion, A-C; Deymier, P; Djafari-Rouhani, B; Duval, F; Dubus, B; Pennec, Y

2007-01-01

We investigate, with the help of the finite element method, the existence of absolute band gaps in the band structure of a free-standing phononic crystal plate and of a phononic crystal slab deposited on a substrate. The two-dimensional phononic crystal is constituted by a square array of holes drilled in an active piezoelectric (PZT5A or AlN) matrix. For both matrix materials, an absolute band gap occurs in the band structure of the free-standing plate provided the thickness of the plate is on the order of magnitude of the lattice parameter. When the plate is deposited on a Si substrate, the absolute band gap still remains when the matrix of the phononic crystal is made of PZT5A. The AlN phononic crystal plate losses its gap when supported by the Si substrate. In the case of the PZT5A matrix, we also study the possibility of localized modes associated with a linear defect created by removing one row of air holes in the deposited phononic crystal plate

A new fiber optic sensor for inner surface roughness measurement

Science.gov (United States)

Xu, Xiaomei; Liu, Shoubin; Hu, Hong

2009-11-01

In order to measure inner surface roughness of small holes nondestructively, a new fiber optic sensor is researched and developed. Firstly, a new model for surface roughness measurement is proposed, which is based on intensity-modulated fiber optic sensors and scattering modeling of rough surfaces. Secondly, a fiber optical measurement system is designed and set up. Under the help of new techniques, the fiber optic sensor can be miniaturized. Furthermore, the use of micro prism makes the light turn 90 degree, so the inner side surface roughness of small holes can be measured. Thirdly, the fiber optic sensor is gauged by standard surface roughness specimens, and a series of measurement experiments have been done. The measurement results are compared with those obtained by TR220 Surface Roughness Instrument and Form Talysurf Laser 635, and validity of the developed fiber optic sensor is verified. Finally, precision and influence factors of the fiber optic sensor are analyzed.

Inverse Edelstein effect induced by magnon-phonon coupling

Science.gov (United States)

Xu, Mingran; Puebla, Jorge; Auvray, Florent; Rana, Bivas; Kondou, Kouta; Otani, Yoshichika

2018-05-01

We demonstrate a spin to charge current conversion via magnon-phonon coupling and an inverse Edelstein effect on the hybrid device Ni/Cu (Ag )/Bi 2O3 . The generation of spin current (Js≈108A/m2 ) due to magnon-phonon coupling reveals the viability of acoustic spin pumping as a mechanism for the development of spintronic devices. A full in-plane magnetic field angle dependence of the power absorption and a combination of longitudinal and transverse voltage detection reveals the symmetric and asymmetric components of the inverse Edelstein effect voltage induced by Rayleigh-type surface acoustic waves. While the symmetric components are well studied, asymmetric components still need to be explored. We assign the asymmetric contributions to the interference between longitudinal and shear waves and an anisotropic charge distribution in our hybrid device.

Coalescence towards exceptional contours in synthetic phononic media

DEFF Research Database (Denmark)

Christensen, Johan

2016-01-01

Parity-time symmetric media, also referred to as synthetic media, have been devised in many optical systems with the ground breaking potential to create non-reciprocal structures and one-way cloaks of invisibility. Here we demonstrate a feasible approach for the case of sound where gain and loss...... are induced via the acousto-electric effect in electrically biased piezoelectric semiconductors. We study how wave attenuation and amplification can be tuned, and when combined, can give rise to phononic synthetic media with unidirectional suppressed reflectance, a feature directly applicable to evading sonar...

Quasiparticles, phonons and beyond. Enlargement the basis of quasiparticle-phonon model

International Nuclear Information System (INIS)

Stoyanov, Ch.

2000-01-01

The version of Quasiparticle-Phonon Model (QPM) which accounts up to three-phonons is discussed. The new basis is used to study the low-lying isovector mode and the low-energy E1 transitions forbidden in the ideal boson picture. The coupling to the continuum is incorporated in the formalism of QPM. The phenomenon of trapping of states is studied in the case of high-lying states with large angular momentum. (author)

Transient thermal and nonthermal electron and phonon relaxation after short-pulsed laser heating of metals

International Nuclear Information System (INIS)

Giri, Ashutosh; Hopkins, Patrick E.

2015-01-01

Several dynamic thermal and nonthermal scattering processes affect ultrafast heat transfer in metals after short-pulsed laser heating. Even with decades of measurements of electron-phonon relaxation, the role of thermal vs. nonthermal electron and phonon scattering on overall electron energy transfer to the phonons remains unclear. In this work, we derive an analytical expression for the electron-phonon coupling factor in a metal that includes contributions from equilibrium and nonequilibrium distributions of electrons. While the contribution from the nonthermal electrons to electron-phonon coupling is non-negligible, the increase in the electron relaxation rates with increasing laser fluence measured by thermoreflectance techniques cannot be accounted for by only considering electron-phonon relaxations. We conclude that electron-electron scattering along with electron-phonon scattering have to be considered simultaneously to correctly predict the transient nature of electron relaxation during and after short-pulsed heating of metals at elevated electron temperatures. Furthermore, for high electron temperature perturbations achieved at high absorbed laser fluences, we show good agreement between our model, which accounts for d-band excitations, and previous experimental data. Our model can be extended to other free electron metals with the knowledge of the density of states of electrons in the metals and considering electronic excitations from non-Fermi surface states

Numerical simulation of gas-phonon coupling in thermal transpiration flows.

Science.gov (United States)

Guo, Xiaohui; Singh, Dhruv; Murthy, Jayathi; Alexeenko, Alina A

2009-10-01

Thermal transpiration is a rarefied gas flow driven by a wall temperature gradient and is a promising mechanism for gas pumping without moving parts, known as the Knudsen pump. Obtaining temperature measurements along capillary walls in a Knudsen pump is difficult due to extremely small length scales. Meanwhile, simplified analytical models are not applicable under the practical operating conditions of a thermal transpiration device, where the gas flow is in the transitional rarefied regime. Here, we present a coupled gas-phonon heat transfer and flow model to study a closed thermal transpiration system. Discretized Boltzmann equations are solved for molecular transport in the gas phase and phonon transport in the solid. The wall temperature distribution is the direct result of the interfacial coupling based on mass conservation and energy balance at gas-solid interfaces and is not specified a priori unlike in the previous modeling efforts. Capillary length scales of the order of phonon mean free path result in a smaller temperature gradient along the transpiration channel as compared to that predicted by the continuum solid-phase heat transfer. The effects of governing parameters such as thermal gradients, capillary geometry, gas and phonon Knudsen numbers and, gas-surface interaction parameters on the efficiency of thermal transpiration are investigated in light of the coupled model.

Phonocatalysis. An ab initio simulation experiment

Directory of Open Access Journals (Sweden)

Kwangnam Kim

2016-06-01

Full Text Available Using simulations, we postulate and show that heterocatalysis on large-bandgap semiconductors can be controlled by substrate phonons, i.e., phonocatalysis. With ab initio calculations, including molecular dynamic simulations, the chemisorbed dissociation of XeF6 on h-BN surface leads to formation of XeF4 and two surface F/h-BN bonds. The reaction pathway and energies are evaluated, and the sorption and reaction emitted/absorbed phonons are identified through spectral analysis of the surface atomic motion. Due to large bandgap, the atomic vibration (phonon energy transfer channels dominate and among them is the match between the F/h-BN covalent bond stretching and the optical phonons. We show that the chemisorbed dissociation (the pathway activation ascent requires absorption of large-energy optical phonons. Then using progressively heavier isotopes of B and N atoms, we show that limiting these high-energy optical phonons inhibits the chemisorbed dissociation, i.e., controllable phonocatalysis.

Thickness-dependent coherent phonon frequency in ultrathin FeSe/SrTiO₃ films

Energy Technology Data Exchange (ETDEWEB)

Yang, Shuolong [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Sobota, Jonathan A. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Leuenberger, Dominik [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Kemper, Alexander F. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Lee, James J. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Schmitt, Felix T. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Li, Wei [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Moore, Rob G. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Kirchmann, Patrick S. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Shen, Zhi -Xun [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)

2015-06-01

Ultrathin FeSe films grown on SrTiO₃ substrates are a recent milestone in atomic material engineering due to their important role in understanding unconventional superconductivity in Fe-based materials. By using femtosecond time- and angle-resolved photoelectron spectroscopy, we study phonon frequencies in ultrathin FeSe/SrTiO₃ films grown by molecular beam epitaxy. After optical excitation, we observe periodic modulations of the photoelectron spectrum as a function of pump–probe delay for 1-unit-cell, 3-unit-cell, and 60-unit-cell thick FeSe films. The frequencies of the coherent intensity oscillations increase from 5.00 ± 0.02 to 5.25 ± 0.02 THz with increasing film thickness. By comparing with previous works, we attribute this mode to the Se A_1g phonon. The dominant mechanism for the phonon softening in 1-unit-cell thick FeSe films is a substrate-induced lattice strain. Results demonstrate an abrupt phonon renormalization due to a lattice mismatch between the ultrathin film and the substrate.

Effective electron mass and phonon modes in n-type hexagonal InN

Science.gov (United States)

Kasic, A.; Schubert, M.; Saito, Y.; Nanishi, Y.; Wagner, G.

2002-03-01

Infrared spectroscopic ellipsometry and micro-Raman scattering are used to study vibrational and electronic properties of high-quality hexagonal InN. The 0.22-μm-thick highly n-conductive InN film was grown on c-plane sapphire by radio-frequency molecular-beam epitaxy. Combining our results from the ellipsometry data analysis with Hall-effect measurements, the isotropically averaged effective electron mass in InN is determined as 0.14m0. The resonantly excited zone center E1 (TO) phonon mode is observed at 477 cm-1 in the ellipsometry spectra. Despite the high electron concentration in the film, a strong Raman mode occurs in the spectral range of the unscreened A1(LO) phonon. Because an extended carrier-depleted region at the sample surface can be excluded from the ellipsometry-model analysis, we assign this mode to the lower branch of the large-wave-vector LO-phonon-plasmon coupled modes arising from nonconserving wave-vector scattering processes. The spectral position of this mode at 590 cm-1 constitutes a lower limit for the unscreened A1(LO) phonon frequency.

The lattice dynamical studies of rare earth compounds: electron-phonon interactions

International Nuclear Information System (INIS)

Jha, Prafulla K.; Sanyal, Sankar P.; Singh, R.K.

2002-01-01

During the last two decades chalcogenides and pnictides of rare earth (RE) atoms have drawn considerable attention of the solid state physicists because of their peculiar electronic, magnetic, optical and phonon properties. Some of these compounds e.g. sulphides and selenides of cerium (Ce), samarium (Sm), yttrium (Y), ytterbium (Yb), europium (Eu) and thulium (Tm) and their alloys show nonintegral valence (between 2 and 3), arising due to f-d electron hybridization at ambient temperature and pressure. The rare earth mixed valence compounds (MVC) reviewed in this article crystallize in simple cubic structure. Most of these compounds show the existence of strong electron-phonon coupling at half way to the zone boundary. This fact manifests itself through softening of the longitudinal acoustic mode, negative value of elastic constant C 12 etc. The purpose of this contribution is to review some of the recent activities in the fields of lattice dynamics and allied properties of rare earth compounds. The present article is primarily devoted to review the effect of electron-phonon interactions on the dynamical properties of rare earth compounds by using the lattice dynamical model theories based on charged density deformations and long-range many body forces. While the long range charge transfer effect arises due to f-d hybridization of nearly degenerate 4f-5d bands of rare earth ions, the density deformation comes into the picture of breathing motion of electron shells. These effects of charge transfer and charge density deformation when considered in the lattice dynamical models namely the three body force rigid ion model (TRM) and breathing shell model (BSM) are quite successful in explaining the phonon anomalies in these compounds and undoubtedly unraveled many important physical process governing the phonon anomalies in rare earth compounds

Mutual interactions of phonons, rotons, and gravity

Science.gov (United States)

Nicolis, Alberto; Penco, Riccardo

2018-04-01

We introduce an effective point-particle action for generic particles living in a zero-temperature superfluid. This action describes the motion of the particles in the medium at equilibrium as well as their couplings to sound waves and generic fluid flows. While we place the emphasis on elementary excitations such as phonons and rotons, our formalism applies also to macroscopic objects such as vortex rings and rigid bodies interacting with long-wavelength fluid modes. Within our approach, we reproduce phonon decay and phonon-phonon scattering as predicted using a purely field-theoretic description of phonons. We also correct classic results by Landau and Khalatnikov on roton-phonon scattering. Finally, we discuss how phonons and rotons couple to gravity, and show that the former tend to float while the latter tend to sink but with rather peculiar trajectories. Our formalism can be easily extended to include (general) relativistic effects and couplings to additional matter fields. As such, it can be relevant in contexts as diverse as neutron star physics and light dark matter detection.

Dominant phonon wave vectors and strain-induced splitting of the 2D Raman mode of graphene

Science.gov (United States)

Narula, Rohit; Bonini, Nicola; Marzari, Nicola; Reich, Stephanie

2012-03-01

The dominant phonon wave vectors q* probed by the 2D Raman mode of pristine and uniaxially strained graphene are determined via a combination of ab initio calculations and a full two-dimensional integration of the transition matrix. We show that q* are highly anisotropic and rotate about K with the polarizer and analyzer condition relative to the lattice. The corresponding phonon-mediated electronic transitions show a finite component along K-Γ that sensitively determines q*. We invalidate the notion of “inner” and “outer” processes. The characteristic splitting of the 2D mode of graphene under uniaxial tensile strain and given polarizer and analyzer setting is correctly predicted only if the strain-induced distortion and red-shift of the in-plane transverse optical (iTO) phonon dispersion as well as the changes in the electronic band structure are taken into account.

Phonon broadening in high entropy alloys

Science.gov (United States)

Körmann, Fritz; Ikeda, Yuji; Grabowski, Blazej; Sluiter, Marcel H. F.

2017-09-01

Refractory high entropy alloys feature outstanding properties making them a promising materials class for next-generation high-temperature applications. At high temperatures, materials properties are strongly affected by lattice vibrations (phonons). Phonons critically influence thermal stability, thermodynamic and elastic properties, as well as thermal conductivity. In contrast to perfect crystals and ordered alloys, the inherently present mass and force constant fluctuations in multi-component random alloys (high entropy alloys) can induce significant phonon scattering and broadening. Despite their importance, phonon scattering and broadening have so far only scarcely been investigated for high entropy alloys. We tackle this challenge from a theoretical perspective and employ ab initio calculations to systematically study the impact of force constant and mass fluctuations on the phonon spectral functions of 12 body-centered cubic random alloys, from binaries up to 5-component high entropy alloys, addressing the key question of how chemical complexity impacts phonons. We find that it is crucial to include both mass and force constant fluctuations. If one or the other is neglected, qualitatively wrong results can be obtained such as artificial phonon band gaps. We analyze how the results obtained for the phonons translate into thermodynamically integrated quantities, specifically the vibrational entropy. Changes in the vibrational entropy with increasing the number of elements can be as large as changes in the configurational entropy and are thus important for phase stability considerations. The set of studied alloys includes MoTa, MoTaNb, MoTaNbW, MoTaNbWV, VW, VWNb, VWTa, VWNbTa, VTaNbTi, VWNbTaTi, HfZrNb, HfMoTaTiZr.

Nano-optomechanical system based on microwave frequency surface acoustic waves

Science.gov (United States)

Tadesse, Semere Ayalew

Cavity optomechnics studies the interaction of cavity confined photons with mechanical motion. The emergence of sophisticated nanofabrication technology has led to experimental demonstrations of a wide range of novel optomechanical systems that exhibit strong optomechanical coupling and allow exploration of interesting physical phenomena. Many of the studies reported so far are focused on interaction of photons with localized mechanical modes. For my doctoral research, I did experimental investigations to extend this study to propagating phonons. I used surface travelling acoustic waves as the mechanical element of my optomechanical system. The optical cavities constitute an optical racetrack resonator and photonic crystal nanocavity. This dissertation discusses implementation of this surface acoustic wave based optomechanical system and experimental demonstrations of important consequences of the optomechanical coupling. The discussion focuses on three important achievements of the research. First, microwave frequency surface acoustic wave transducers were co-integrated with an optical racetrack resonator on a piezoelectric aluminum nitride film deposited on an oxidized silicon substrate. Acousto-optic modulation of the resonance modes at above 10 GHz with the acoustic wavelength significantly below the optical wavelength was achieved. The phase and modal matching conditions in this paradigm were investigated for efficient optmechanical coupling. Second, the optomechanical coupling was pushed further into the sideband resolved regime by integrating the high frequency surface acoustic wave transducers with a photonic crystal nanocavity. This device was used to demonstrate optomecahnically induced transparency and absorption, one of the interesting consequences of cavity optomechanics. Phase coherent interaction of the acoustic wave with multiple nanocavities was also explored. In a related experiment, the photonic crystal nanoscavity was placed inside an acoustic

On Phonons in Simple Metals II. Calculated Dispersion Curves In Aluminium

Energy Technology Data Exchange (ETDEWEB)

Johnson, R [AB Atomenergi, Nykoeping (Sweden); Westin, A [Dept. of Theore tical Physics, Univ. of Uppsala, Uppsala (Sweden)

1969-07-15

The real part of the dynamical matrix, derived earlier in a weak local potential ion-electron interaction model of the metal, is investigated in the case of aluminium. It is shown that the free electron, or Lindhard, dielectric function leads to a picture of the metal which is inconsistent with the dHvA observations of the Fermi surface. By adjusting one parameter, however, the experimental phonon frequencies are reproduced satisfactorily. Even some simple structure in the derivative d{omega}/dq can be reproduced in this way. Although corrections to the Lindhard dielectric matrix give no essential contributions to the dynamical matrix, the first order corrections, which are the most important, can explain the observed Fermi surface. Much of the observed structure in the phonon dispersion curves seems also to be due to these non-diagonal terms in the dielectric matrix.

Electromagnetic decay of two-phonon states

International Nuclear Information System (INIS)

Catara, F.; Chomaz, Ph.; Van Giai, N.; Paris-11 Univ., 91 - Orsay

1991-01-01

The electromagnetic decay of two-phonon states corresponding to the multi-excitation of giant resonances is studied. The calculations are performed within a boson expansion approach and the elementary modes are constructed in random phase approximation (RPA). The rates for direct transition of two-phonon states to the ground state turn out to be not negligibly smaller than those from the (single) giant resonances. The former transitions are accompanied by a γ-ray whose energy is equal to the sum of the two phonon energies. Thus the detection of such high energy γ-rays could provide a signature of the excitation of two-phonon states. (author) 9 refs., 3 tabs

Theory of aberration fields for general optical systems with freeform surfaces.

Science.gov (United States)

Fuerschbach, Kyle; Rolland, Jannick P; Thompson, Kevin P

2014-11-03

This paper utilizes the framework of nodal aberration theory to describe the aberration field behavior that emerges in optical systems with freeform optical surfaces, particularly φ-polynomial surfaces, including Zernike polynomial surfaces, that lie anywhere in the optical system. If the freeform surface is located at the stop or pupil, the net aberration contribution of the freeform surface is field constant. As the freeform optical surface is displaced longitudinally away from the stop or pupil of the optical system, the net aberration contribution becomes field dependent. It is demonstrated that there are no new aberration types when describing the aberration fields that arise with the introduction of freeform optical surfaces. Significantly it is shown that the aberration fields that emerge with the inclusion of freeform surfaces in an optical system are exactly those that have been described by nodal aberration theory for tilted and decentered optical systems. The key contribution here lies in establishing the field dependence and nodal behavior of each freeform term that is essential knowledge for effective application to optical system design. With this development, the nodes that are distributed throughout the field of view for each aberration type can be anticipated and targeted during optimization for the correction or control of the aberrations in an optical system with freeform surfaces. This work does not place any symmetry constraints on the optical system, which could be packaged in a fully three dimensional geometry, without fold mirrors.

Phonon dispersion relation of uranium nitrate above and below the Neel temperature

International Nuclear Information System (INIS)

Dolling, G.; Holden, T.M.; Evensson, E.C.; Buyers, W.J.L.; Lander, G.H.

1977-01-01

Neutron coherent inelastic scattering measurements have been made of the phonon dispersion relation of uranium nitride both above and below the Neel temperature T/sub N/ = 50 K. Within the precision of the measurements, about 1% in frequency and 10% in line width and in scattered neutron intensity, no significant changes in these phonon properties were observed as a function of temperature other than those arising from population factor changes and a small stiffening of the lattice as the temperature decreases. At 4.2 K, two acoustic and two optic branches have been determined for each of the [001], [110] and [111] directions. The optic mode measurements revealed (a) a 20% variation in frequency across the Brillouin zone and (b) an interesting disposition of the LO and TO modes, such that nu/sub LO/ > nu/sub TO/ along [001] and [110], while the reverse is true along the [111] directions. Within the experimental resolution, the LO and TO modes are degenerate near q = 0. We have been unable to obtain any satisfactory description of these results on the basis of conventional theoretical treatments (e.g. rigid-ion or shell models). Other possible interpretations of the results are discussed

Phonon dispersion relation of uranium nitride above and below the Neel temperature

International Nuclear Information System (INIS)

Dolling, G.; Holden, T.M.; Svensson, E.C.; Buyers, W.J.L.; Lander, G.H.

1977-01-01

Neutron coherent inelastic scattering measurements have been made of the phonon dispersion relation of uranium nitride both above and below the Neel temperature T N = 50 K. Within the precision of the measurements, about 1% in frequency and 10% in line width and in scattered neutron intensity, no significant changes in these phonon properties were observed as a function of temperature other than those arising from population factor changes and a small stiffening of the lattice as the temperature decreases. At 4.2 K, two acoustic and two optic branches have been determined for each of the [001], [110] and [111] directions. The optic mode measurements revealed (a) a 20% variation in frequency across the Brillouin zone and (b) and interesting disposition of the LO and TO modes, such that ν LO > ν TO along [001] and [11-], while the reverse is true along the [111] directions. Within the experimental resolution, the LO and TO modes are degenerate near q = 0. We have been unable to obtain any satisfactory description of these results on the basis of conventional theoretical treatments (e.g. rigid-ion or shell models). Other possible interpretations of the results are discussed. (author)

Phonon Sensor Dynamics for Cryogenic Dark Matter Search Experiment

Energy Technology Data Exchange (ETDEWEB)

Yen, Jeffrey [Stanford Univ., CA (United States)

2015-01-01

Understanding the quasiparticle diffusion process inside sputtered aluminum (Al thin films (~ 0.1-1 μm is critical for the Cryogenic Dark Matter Search (CDMS experiment to further optimize its detectors to directly search for dark matter. An initial study with Al films was undertaken by our group ~ 20 years ago, but some important questions were not answered at the time. This thesis can be considered a continuation of that critical study. The CDMS experiment utilizes high purity silicon and germanium crystals to simultaneously measure ionization and phonons created by particle interactions. In addition to describing some of the rich physics involved in simultaneously detecting ionization and phonons with a CDMS detector, this thesis focuses on the detailed physics of the phonon sensors themselves, which are patterned onto CDMS detector surfaces. CDMS detectors use thin sputtered Al films to collect phonon energy when it propagates to the surfaces of the detector crystals. The phonon energy breaks Cooper pairs and creates quasiparticles (qps). These qps diffuse until they get trapped in an proximitized “overlap” region where lower-Tc tungsten films connect to the Al film. These tungsten films are the transition edge sensors (W-TESs CDMS uses to readout phonon signals. We performed a wide range of experiments using several sets of test devices designed and fabricated specifically for this work. The devices were used mostly to study quasiparticle (qp transport in Al films and qp transmission through Al/W interfaces. The results of this work are being used to optimize the design of detectors for SuperCDMS SNOLAB. This thesis is intended for CDMS collaborators who are interested in knowing more about the detailed fundamentals of how our phonon sensors work so they can take full advantage of their benefits. However, this work can also be read by general readers who are interested in particle detection using TES technology. This thesis contains eight chapters. The

Electron-phonon relaxation and excited electron distribution in gallium nitride

Energy Technology Data Exchange (ETDEWEB)

Zhukov, V. P. [Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Pervomayskaya st. 91, Yekaterinburg (Russian Federation); Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Tyuterev, V. G., E-mail: valtyut00@mail.ru [Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Tomsk State Pedagogical University, Kievskaya st. 60, Tomsk (Russian Federation); Tomsk State University, Lenin st. 36, Tomsk (Russian Federation); Chulkov, E. V. [Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Tomsk State University, Lenin st. 36, Tomsk (Russian Federation); Departamento de Fisica de Materiales, Facultad de Ciencias Qumicas, UPV/EHU and Centro de Fisica de Materiales CFM-MPC and Centro Mixto CSIC-UPV/EHU, Apdo. 1072, 20080 San Sebastian (Spain); Echenique, P. M. [Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Departamento de Fisica de Materiales, Facultad de Ciencias Qumicas, UPV/EHU and Centro de Fisica de Materiales CFM-MPC and Centro Mixto CSIC-UPV/EHU, Apdo. 1072, 20080 San Sebastian (Spain)

2016-08-28

We develop a theory of energy relaxation in semiconductors and insulators highly excited by the long-acting external irradiation. We derive the equation for the non-equilibrium distribution function of excited electrons. The solution for this function breaks up into the sum of two contributions. The low-energy contribution is concentrated in a narrow range near the bottom of the conduction band. It has the typical form of a Fermi distribution with an effective temperature and chemical potential. The effective temperature and chemical potential in this low-energy term are determined by the intensity of carriers' generation, the speed of electron-phonon relaxation, rates of inter-band recombination, and electron capture on the defects. In addition, there is a substantial high-energy correction. This high-energy “tail” largely covers the conduction band. The shape of the high-energy “tail” strongly depends on the rate of electron-phonon relaxation but does not depend on the rates of recombination and trapping. We apply the theory to the calculation of a non-equilibrium distribution of electrons in an irradiated GaN. Probabilities of optical excitations from the valence to conduction band and electron-phonon coupling probabilities in GaN were calculated by the density functional perturbation theory. Our calculation of both parts of distribution function in gallium nitride shows that when the speed of the electron-phonon scattering is comparable with the rate of recombination and trapping then the contribution of the non-Fermi “tail” is comparable with that of the low-energy Fermi-like component. So the high-energy contribution can essentially affect the charge transport in the irradiated and highly doped semiconductors.

Anisotropic Electron-Photon and Electron-Phonon Interactions in Black Phosphorus.

Science.gov (United States)

Ling, Xi; Huang, Shengxi; Hasdeo, Eddwi H; Liang, Liangbo; Parkin, William M; Tatsumi, Yuki; Nugraha, Ahmad R T; Puretzky, Alexander A; Das, Paul Masih; Sumpter, Bobby G; Geohegan, David B; Kong, Jing; Saito, Riichiro; Drndic, Marija; Meunier, Vincent; Dresselhaus, Mildred S

2016-04-13

Orthorhombic black phosphorus (BP) and other layered materials, such as gallium telluride (GaTe) and tin selenide (SnSe), stand out among two-dimensional (2D) materials owing to their anisotropic in-plane structure. This anisotropy adds a new dimension to the properties of 2D materials and stimulates the development of angle-resolved photonics and electronics. However, understanding the effect of anisotropy has remained unsatisfactory to date, as shown by a number of inconsistencies in the recent literature. We use angle-resolved absorption and Raman spectroscopies to investigate the role of anisotropy on the electron-photon and electron-phonon interactions in BP. We highlight, both experimentally and theoretically, a nontrivial dependence between anisotropy and flake thickness and photon and phonon energies. We show that once understood, the anisotropic optical absorption appears to be a reliable and simple way to identify the crystalline orientation of BP, which cannot be determined from Raman spectroscopy without the explicit consideration of excitation wavelength and flake thickness, as commonly used previously.

Analytical approach to phonons and electron-phonon interactions in single-walled zigzag carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Kandemir, B S; Keskin, M [Department of Physics, Faculty of Sciences, Ankara University, 06100 Tandogan, Ankara (Turkey)

2008-08-13

In this paper, exact analytical expressions for the entire phonon spectra in single-walled carbon nanotubes with zigzag geometry are presented by using a new approach, originally developed by Kandemir and Altanhan. This approach is based on the concept of construction of a classical lattice Hamiltonian of single-walled carbon nanotubes, wherein the nearest and next nearest neighbor and bond bending interactions are all included, then its quantization and finally diagonalization of the resulting second quantized Hamiltonian. Furthermore, within this context, explicit analytical expressions for the relevant electron-phonon interaction coefficients are also investigated for single-walled carbon nanotubes having this geometry, by the phonon modulation of the hopping interaction.

Analytical approach to phonons and electron-phonon interactions in single-walled zigzag carbon nanotubes

International Nuclear Information System (INIS)

Kandemir, B S; Keskin, M

2008-01-01

In this paper, exact analytical expressions for the entire phonon spectra in single-walled carbon nanotubes with zigzag geometry are presented by using a new approach, originally developed by Kandemir and Altanhan. This approach is based on the concept of construction of a classical lattice Hamiltonian of single-walled carbon nanotubes, wherein the nearest and next nearest neighbor and bond bending interactions are all included, then its quantization and finally diagonalization of the resulting second quantized Hamiltonian. Furthermore, within this context, explicit analytical expressions for the relevant electron-phonon interaction coefficients are also investigated for single-walled carbon nanotubes having this geometry, by the phonon modulation of the hopping interaction

Improving surface acousto-optical interaction by high aspect ratio electrodes

DEFF Research Database (Denmark)

Dühring, Maria Bayard; Laude, Vincent; Khelif, Abdelkrim

2009-01-01

The acousto-optical interaction of an optical wave confined inside a waveguide and a surface acoustic wave launched by an interdigital transducer (IDT) at the surface of a piezoelectric material is considered. The IDT with high aspect ratio electrodes supports several acoustic modes that are stro......The acousto-optical interaction of an optical wave confined inside a waveguide and a surface acoustic wave launched by an interdigital transducer (IDT) at the surface of a piezoelectric material is considered. The IDT with high aspect ratio electrodes supports several acoustic modes...

Semi-Dirac points in phononic crystals

KAUST Repository

Zhang, Xiujuan

2014-01-01

A semi-Dirac cone refers to a peculiar type of dispersion relation that is linear along the symmetry line but quadratic in the perpendicular direction. It was originally discovered in electron systems, in which the associated quasi-particles are massless along one direction, like those in graphene, but effective-mass-like along the other. It was reported that a semi-Dirac point is associated with the topological phase transition between a semi-metallic phase and a band insulator. Very recently, the classical analogy of a semi-Dirac cone has been reported in an electromagnetic system. Here, we demonstrate that, by accidental degeneracy, two-dimensional phononic crystals consisting of square arrays of elliptical cylinders embedded in water are also able to produce the particular dispersion relation of a semi-Dirac cone in the center of the Brillouin zone. A perturbation method is used to evaluate the linear slope and to affirm that the dispersion relation is a semi-Dirac type. If the scatterers are made of rubber, in which the acoustic wave velocity is lower than that in water, the semi-Dirac dispersion can be characterized by an effective medium theory. The effective medium parameters link the semi-Dirac point to a topological transition in the iso-frequency surface of the phononic crystal, in which an open hyperbola is changed into a closed ellipse. This topological transition results in drastic change in wave manipulation. On the other hand, the theory also reveals that the phononic crystal is a double-zero-index material along the x-direction and photonic-band-edge material along the perpendicular direction (y-direction). If the scatterers are made of steel, in which the acoustic wave velocity is higher than that in water, the effective medium description fails, even though the semi-Dirac dispersion relation looks similar to that in the previous case. Therefore different wave transport behavior is expected. The semi-Dirac points in phononic crystals described in

Measurements of the ballistic-phonon component resulting from nuclear and electron recoils in crystalline silicon

International Nuclear Information System (INIS)

Lee, A.T.; Cabrera, B.; Dougherty, B.L.; Penn, M.J.; Pronko, J.G.; Tamura, S.

1996-01-01

We present measurements of the ballistic-phonon component resulting from nuclear and electron recoils in silicon at ∼380 mK. The detectors used for these experiments consist of a 300-μm-thick monocrystal of silicon instrumented with superconducting titanium transition-edge sensors. These sensors detect the initial wavefront of athermal phonons and give a pulse height that is sensitive to changes in surface-energy density resulting from the focusing of ballistic phonons. Nuclear recoils were generated by neutron bombardment of the detector. A Van de Graaff proton accelerator and a thick 7 Li target were used. Pulse-height spectra were compared for neutron, x-ray, and γ-ray events. A previous analysis of this data set found evidence for an increase in the ballistic-phonon component for nuclear recoils compared to electron recoils at a 95% confidence level. An improved understanding of the detector response has led to a change in the result. In the present analysis, the data are consistent with no increase at the 68% confidence level. This change stems from an increase in the uncertainty of the result rather than a significant change in the central value. The increase in ballistic phonon energy for nuclear recoils compared to electron recoils as a fraction of the total phonon energy (for equal total phonon energy events) was found to be 0.024 +0.041 -0.055 (68% confidence level). This result sets a limit of 11.6% (95% confidence level) on the ballistic phonon enhancement for nuclear recoils predicted by open-quote open-quote hot spot close-quote close-quote and electron-hole droplet models, which is the most stringent to date. To measure the ballistic-phonon component resulting from electron recoils, the pulse height as a function of event depth was compared to that of phonon simulations. (Abstract Truncated)

One-dimensional hypersonic phononic crystals.

Science.gov (United States)

Gomopoulos, N; Maschke, D; Koh, C Y; Thomas, E L; Tremel, W; Butt, H-J; Fytas, G

2010-03-10

We report experimental observation of a normal incidence phononic band gap in one-dimensional periodic (SiO(2)/poly(methyl methacrylate)) multilayer film at gigahertz frequencies using Brillouin spectroscopy. The band gap to midgap ratio of 0.30 occurs for elastic wave propagation along the periodicity direction, whereas for inplane propagation the system displays an effective medium behavior. The phononic properties are well captured by numerical simulations. The porosity in the silica layers presents a structural scaffold for the introduction of secondary active media for potential coupling between phonons and other excitations, such as photons and electrons.

Coherent helix vacancy phonon and its ultrafast dynamics waning in topological Dirac semimetal C d3A s2

Science.gov (United States)

Sun, Fei; Wu, Q.; Wu, Y. L.; Zhao, H.; Yi, C. J.; Tian, Y. C.; Liu, H. W.; Shi, Y. G.; Ding, H.; Dai, X.; Richard, P.; Zhao, Jimin

2017-06-01

We report an ultrafast lattice dynamics investigation of the topological Dirac semimetal C d3A s2 . A coherent phonon beating among three evenly spaced A1 g optical phonon modes (of frequencies 1.80, 1.96, and 2.11 THz, respectively) is unambiguously observed. The two side modes originate from the counter helixes composing Cd vacancies. Significantly, such helix vacancy-induced phonon (HVP) modes experience prominent extra waning in their ultrafast dynamics as temperature increases, which is immune to the central mode. Above 200 K, the HVP becomes inactive, which may potentially affect the topological properties. Our results in the lattice degree of freedom suggest the indispensable role of temperature in considering topological properties of such quantum materials.

The effect of n- and p-type doping on coherent phonons in GaN.

Science.gov (United States)

Ishioka, Kunie; Kato, Keiko; Ohashi, Naoki; Haneda, Hajime; Kitajima, Masahiro; Petek, Hrvoje

2013-05-22

The effect of doping on the carrier-phonon interaction in wurtzite GaN is investigated by pump-probe reflectivity measurements using 3.1 eV light in near resonance with the fundamental band gap of 3.39 eV. Coherent modulations of the reflectivity due to the E2 and A1(LO) modes, as well as the 2A1(LO) overtone are observed. Doping of acceptor and donor atoms enhances the dephasing of the polar A1(LO) phonon via coupling with plasmons, with the effect of donors being stronger. Doping also enhances the relative amplitude of the coherent A1(LO) phonon with respect to that of the high-frequency E2 phonon, though it does not affect the relative intensity in Raman spectroscopic measurements. We attribute this enhanced coherent amplitude to the transient depletion field screening (TDFS) excitation mechanism, which, in addition to impulsive stimulated Raman scattering (ISRS), contributes to the generation of coherent polar phonons even for sub-band gap excitation. Because the TDFS mechanism requires photoexcitation of carriers, we argue that the interband transition is made possible at a surface with photon energies below the bulk band gap through the Franz-Keldysh effect.

Coherent coupling between radio frequency, optical, and acoustic waves in piezo-optomechanical circuits

Science.gov (United States)

Balram, Krishna C.; Davanço, Marcelo I.; Song, Jin Dong; Srinivasan, Kartik

2016-01-01

Optomechanical cavities have been studied for applications ranging from sensing to quantum information science. Here, we develop a platform for nanoscale cavity optomechanical circuits in which optomechanical cavities supporting co-localized 1550 nm photons and 2.4 GHz phonons are combined with photonic and phononic waveguides. Working in GaAs facilitates manipulation of the localized mechanical mode either with a radio frequency (RF) field through the piezo-electric effect, which produces acoustic waves that are routed and coupled to the optomechanical cavity by phononic crystal waveguides, or optically through the strong photoelastic effect. Along with mechanical state preparation and sensitive readout, we use this to demonstrate an acoustic wave interference effect, similar to atomic coherent population trapping, in which RF-driven coherent mechanical motion is cancelled by optically-driven motion. Manipulating cavity optomechanical systems with equal facility through both photonic and phononic channels enables new architectures for signal transduction between the optical, electrical, and mechanical domains. PMID:27446234

Pair correlations in near-magic nuclei and the nucleon--phonon interaction

International Nuclear Information System (INIS)

Kadmenskii, S.G.; Luk'yanovich, P.A.; Remesov, Y.I.; Furman, V.I.

1987-01-01

It is demonstrated that the nucleon-pairing phenomenon is entirely due to the finiteness of nuclei. A technique for taking account of the phonon-exchange-related retarded interaction in the particle--particle channel is developed for nuclei of the ''mag +- 2'' and ''mag +- 3'' types. It is shown that the nucleon--phonon interaction strength computed with allowance for the most collectivized surface oscillation branches makes it possible to ensure the correct attraction scale necessary for the description of the pairing phenomenon. The existence of a more profound similarity between the phenomena of superconductivity of metals and Cooper pairing of nucleons in nuclei is thus demonstrated

Anisotropic phonon coupling in the relaxor ferroelectric (Na1/2Bi1/2)TiO3 near its high-temperature phase transition

Science.gov (United States)

Cai, Ling; Toulouse, Jean; Luo, Haosu; Tian, Wei

2014-08-01

The lead free relaxor Na1/2Bi1/2TiO3 (NBT) undergoes a structural cubic-to-tetragonal transition near 800 K which is caused by the cooperative rotations of O6 octahedra. These rotations are also accompanied by the displacements of the cations and the formation of the polar nanodomains (PNDs) that are responsible for the characteristic dielectric dispersion of relaxor ferroelectrics. Because of their intrinsic properties, spontaneous polarization, and lack of inversion symmetry, these PNDs are also piezoelectric and can mediate an interaction between polarization and strain or couple the optic and acoustic phonons. Because PNDs introduce a local tetragonal symmetry, the phonon coupling they mediate is found to be anisotropic. In this paper we present inelastic neutron scattering results on coupled transverse acoustic (TA) and transverse optic (TO) phonons in the [110] and [001] directions and across the cubic-tetragonal phase transition at TC˜800 K. The phonon spectra are analyzed using a mode coupling model. In the [110] direction, as in other relaxors and some ferroelectric perovskites, a precipitous drop of the TO phonon into the TA branch or "waterfall" is observed at a certain qwf˜0.14 r.l.u. In the [001] direction, the highly overdamped line shape can be fitted with closely positioned bare mode energies which are largely overlapping along the dispersion curves. Two competing lattice coupling mechanism are proposed to explain these observations.

Thermal design studies in superconducting rf cavities: Phonon peak and Kapitza conductance

Directory of Open Access Journals (Sweden)

A. Aizaz

2010-09-01

Full Text Available Thermal design studies of superconducting radio frequency (SRF cavities involve two thermal parameters, namely the temperature dependent thermal conductivity of Nb at low temperatures and the heat transfer coefficient at the Nb-He II interface, commonly known as the Kapitza conductance. During the fabrication process of the SRF cavities, Nb sheet is plastically deformed through a deep drawing process to obtain the desired shape. The effect of plastic deformation on low temperature thermal conductivity as well as Kapitza conductance has been studied experimentally. Strain induced during the plastic deformation process reduces the thermal conductivity in its phonon transmission regime (disappearance of phonon peak by 80%, which may explain the performance limitations of the defect-free SRF cavities during their high field operations. Low temperature annealing of the deformed Nb sample could not recover the phonon peak. However, moderate temperature annealing during the titanification process recovered the phonon peak in the thermal conductivity curve. Kapitza conductance measurements for the Nb-He II interface for various surface topologies have also been carried out before and after the annealing. These measurements reveal consistently increased Kapitza conductance after the annealing process was carried out in the two temperature regimes.

Effect of Holstein phonons on the electronic properties of graphene

OpenAIRE

Stauber, T.; Peres, N. M. R.

2007-01-01

We obtain the self-energy of the electronic propagator due to the presence of Holstein polarons within the first Born approximation. This leads to a renormalization of the Fermi velocity of one percent. We further compute the optical conductivity of the system at the Dirac point and at finite doping within the Kubo-formula. We argue that the effects due to Holstein phonons are negligible and that the Boltzmann approach which does not include inter-band transition and can thus not treat optica...

Progress in surface plasmon subwavelength optics

International Nuclear Information System (INIS)

Zhang Douguo; Wang Pei; Jiao Xiaojin; Tang Lin; Lu Yonghua; Ming Hai

2005-01-01

Now great attention is being paid to the potential applications of surface plasmon polaritons (SPPs) in data storage, light generation, microscopy and bio-photonics. The authors review the properties of SPPs and topics of recent interest in surface plasmon subwavelength optics. (author)

Situation with collective two-phonon states in deformed nuclei

International Nuclear Information System (INIS)

Soloviev, V.G.; Shirikova, N.Yu.

1982-01-01

Within the quasiparticle-phonon nuclear model with the operators of phonons depending on the sign of the angular momentum projection, the Pauli principle is taken into account in the two-phonon components of the wave functions. The centroid energies of the collective two-phonon states in even-even deformed nuclei are calculated. It is shown that the inclusion of the Pauli principle leads to their shift by 1-3 MeV towards high energies. The shifts of three-phonon poles due to the Pauli principle are calculated in the three-phonon components of the wave functions. The collective two-phonon states, the centroid energies of which are 3-5 MeV, are expected to be strongly fragmented. The conclusion is confirmed that the collective two-phonon states should not exist in deformed nuclei. The situation in 168 Er and in the 228 Th isotopes is analysed

Cavity-polariton interaction mediated by coherent acoustic phonons in semiconductor microcavities

DEFF Research Database (Denmark)

de Lima, Mauricio; Hey, Rudolf; Santos, Paul

The strong coupling between excitons in a quantum well (QW) and photons in a semiconductor microcavity leads to the formation of quasi-particles known as cavity-polaritons. In this contribution, we investigate their interaction with coherent acoustic phonons in the form of surface acoustic waves...

Integrated phononic crystal resonators based on adiabatically-terminated phononic crystal waveguides

Directory of Open Access Journals (Sweden)

Razi Dehghannasiri

2016-12-01

Full Text Available In this letter, we demonstrate a new design for integrated phononic crystal (PnC resonators based on confining acoustic waves in a heterogeneous waveguide-based PnC structure. In this architecture, a PnC waveguide that supports a single mode at the desired resonance frequencies is terminated by two waveguide sections with no propagating mode at those frequencies (i.e., have mode gap. The proposed PnC resonators are designed through combining the spatial-domain and the spatial-frequency domain (i.e., the k-domain analysis to achieve a smooth mode envelope. This design approach can benefit both membrane-based and surface-acoustic-wave-based architectures by confining the mode spreading in k-domain that leads to improved electromechanical excitation/detection coupling and reduced loss through propagating bulk modes.

A holographic perspective on phonons and pseudo-phonons

Energy Technology Data Exchange (ETDEWEB)

Amoretti, Andrea [Institute of Theoretical Physics and Astrophysics, University of Würzburg,97074 Würzburg (Germany); Physique Théorique et Mathématique and International Solvay Institutes,Université Libre de Bruxelles,C.P. 231, 1050 Brussels (Belgium); Areán, Daniel [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut),Föhringer Ring 6, D-80805, Munich (Germany); Argurio, Riccardo [Physique Théorique et Mathématique and International Solvay Institutes,Université Libre de Bruxelles,C.P. 231, 1050 Brussels (Belgium); Musso, Daniele [Departamento de Física de Partículas, Universidade de Santiago de Compostelaand Instituto Galego de Física de Altas Enerxías (IGFAE),E-15782, Santiago de Compostela (Spain); Zayas, Leopoldo A. Pando [Michigan Center for Theoretical Physics, Department of Physics, University of Michigan,Ann Arbor, MI 48109 (United States)

2017-05-10

We analyze the concomitant spontaneous breaking of translation and conformal symmetries by introducing in a CFT a complex scalar operator that acquires a spatially dependent expectation value. The model, inspired by the holographic Q-lattice, provides a privileged setup to study the emergence of phonons from a spontaneous translational symmetry breaking in a conformal field theory and offers valuable hints for the treatment of phonons in QFT at large. We first analyze the Ward identity structure by means of standard QFT techniques, considering both spontaneous and explicit symmetry breaking. Next, by implementing holographic renormalization, we show that the same set of Ward identities holds in the holographic Q-lattice. Eventually, relying on the holographic and QFT results, we study the correlators realizing the symmetry breaking pattern and how they encode information about the low-energy spectrum.

Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates

Directory of Open Access Journals (Sweden)

Lei Wen

2011-01-01

Full Text Available Abstract Catalyst-free, vertical array of InAs nanowires (NWs are grown on Si (111 substrate using MOCVD technique. The as-grown InAs NWs show a zinc-blende crystal structure along a < 111 > direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatures, while the diameter increases with increasing growth temperature, suggesting that the catalyst-free growth of InAs NWs is governed by the nucleation kinetics. The longitudinal optical and transverse optical (TO mode of InAs NWs present a phonon frequency slightly lower than those of InAs bulk materials, which are speculated to be caused by the defects in the NWs. A surface optical mode is also observed for the InAs NWs, which shifts to lower wave-numbers when the diameter of NWs is decreased, in agreement with the theory prediction. The carrier concentration is extracted to be 2.25 × 1017 cm-3 from the Raman line shape analysis. A splitting of TO modes is also observed. PACS: 62.23.Hj; 81.07.Gf; 63.22.Gh; 61.46.Km

Phonon optimized interatomic potential for aluminum

Directory of Open Access Journals (Sweden)

Murali Gopal Muraleedharan

2017-12-01

Full Text Available We address the problem of generating a phonon optimized interatomic potential (POP for aluminum. The POP methodology, which has already been shown to work for semiconductors such as silicon and germanium, uses an evolutionary strategy based on a genetic algorithm (GA to optimize the free parameters in an empirical interatomic potential (EIP. For aluminum, we used the Vashishta functional form. The training data set was generated ab initio, consisting of forces, energy vs. volume, stresses, and harmonic and cubic force constants obtained from density functional theory (DFT calculations. Existing potentials for aluminum, such as the embedded atom method (EAM and charge-optimized many-body (COMB3 potential, show larger errors when the EIP forces are compared with those predicted by DFT, and thus they are not particularly well suited for reproducing phonon properties. Using a comprehensive Vashishta functional form, which involves short and long-ranged interactions, as well as three-body terms, we were able to better capture interactions that reproduce phonon properties accurately. Furthermore, the Vashishta potential is flexible enough to be extended to Al2O3 and the interface between Al-Al2O3, which is technologically important for combustion of solid Al nano powders. The POP developed here is tested for accuracy by comparing phonon thermal conductivity accumulation plots, density of states, and dispersion relations with DFT results. It is shown to perform well in molecular dynamics (MD simulations as well, where the phonon thermal conductivity is calculated via the Green-Kubo relation. The results are within 10% of the values obtained by solving the Boltzmann transport equation (BTE, employing Fermi’s Golden Rule to predict the phonon-phonon relaxation times.

Phonon optimized interatomic potential for aluminum

Science.gov (United States)