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Sample records for surface ion si

  1. Roughness evolution of Si surfaces upon Ar ion erosion

    NARCIS (Netherlands)

    de Rooij-Lohmann, Vita; Kozhevnikov, I. V.; Peverini, L.; Ziegler, E.; Cuerno, R.; F. Bijkerk,; Yakshin, A. E.

    2010-01-01

    We studied the roughness evolution of Si surfaces upon Ar ion erosion in real time. Following the theory of surface kinetic roughening, a model proposed by Majaniemi was used to obtain the value of the dynamic scaling exponent beta from our data. The model was found to explain both the observed

  2. Surface sputtering in high-dose Fe ion implanted Si

    International Nuclear Information System (INIS)

    Ishimaru, Manabu

    2007-01-01

    Microstructures and elemental distributions in high-dose Fe ion implanted Si were characterized by means of transmission electron microscopy and Rutherford backscattering spectroscopy. Single crystalline Si(0 0 1) substrates were implanted at 350 deg. C with 120 keV Fe ions to fluences ranging from 0.1 x 10 17 to 4.0 x 10 17 /cm 2 . Extensive damage induced by ion implantation was observed inside the substrate below 1.0 x 10 17 /cm 2 , while a continuous iron silicide layer was formed at 4.0 x 10 17 /cm 2 . It was found that the spatial distribution of Fe projectiles drastically changes at the fluence between 1.0 x 10 17 and 4.0 x 10 17 /cm 2 due to surface sputtering during implantation

  3. Argon ion beam induced surface pattern formation on Si

    Energy Technology Data Exchange (ETDEWEB)

    Hofsäss, H.; Bobes, O.; Zhang, K. [2nd Institute of Physics, Faculty of Physics, University Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany)

    2016-01-21

    The development of self-organized surface patterns on Si due to noble gas ion irradiation has been studied extensively in the past. In particular, Ar ions are commonly used and the pattern formation was analyzed as function of ion incidence angle, ion fluence, and ion energies between 250 eV and 140 keV. Very few results exist for the energy regime between 1.5 keV and 10 keV and it appears that pattern formation is completely absent for these ion energies. In this work, we present experimental data on pattern formation for Ar ion irradiation between 1 keV and 10 keV and ion incidence angles between 50° and 75°. We confirm the absence of patterns at least for ion fluences up to 10{sup 18} ions/cm{sup 2}. Using the crater function formalism and Monte Carlo simulations, we calculate curvature coefficients of linear continuum models of pattern formation, taking into account contribution due to ion erosion and recoil redistribution. The calculations consider the recently introduced curvature dependence of the erosion crater function as well as the dynamic behavior of the thickness of the ion irradiated layer. Only when taking into account these additional contributions to the linear theory, our simulations clearly show that that pattern formation is strongly suppressed between about 1.5 keV and 10 keV, most pronounced at 3 keV. Furthermore, our simulations are now able to predict whether or not parallel oriented ripple patterns are formed, and in case of ripple formation the corresponding critical angles for the whole experimentally studied energies range between 250 eV and 140 keV.

  4. Growth of DySi sub 2 layers on Si surface by high-current Dy-ion implantation

    CERN Document Server

    Cheng, X Q

    2003-01-01

    We report, in this paper, the synthesis of DySi sub 2 layers on Si surfaces by high-current Dy-ion implantation in Si wafers using a metal vapor vacuum arc ion source. It was found that the continuous DySi sub 2 layers could grow at a relatively low formation temperature of 190degC and that the surface morphology varied with the variation of the implantation parameters. The formation mechanism of the equilibrium DySi sub 2 phase as well as the continuous DySi sub 2 layer on Si surface is proposed in terms of ion beam heating and the effect of ion dose on the Dy-ion implantation process. (author)

  5. Potential sputtering from a Si surface by very highly charged ion impact

    International Nuclear Information System (INIS)

    Tona, Masahide; Watanabe, Hirofumi; Takahashi, Satoshi; Nakamura, Nobuyuki; Yoshiyasu, Nobuo; Sakurai, Makoto; Yamada, Chikashi; Ohtani, Shunsuke

    2007-01-01

    We have observed radiation effect in collision of slow highly charged ions with the following target materials; a SiO 2 thin film, a Si(1 1 1)-(7 x 7) surface and a hydrogen terminated Si(1 1 1)-(1 x 1) surface. Secondary ion mass spectrometry and scanning tunneling microscopy revealed some features due to 'potential sputtering'; (a) strong dependence of secondary particle emission on the surface condition, (b) high yield of positive ion emission including cluster fragments and (c) creation of nanometer sized surface structure. The mechanism for the potential sputtering is briefly discussed, based on the 'Coulomb explosion' model

  6. Low energy ion beam modification of Cu/Ni/Si(100) surface

    Indian Academy of Sciences (India)

    Abstract. Cu/Ni bilayer has been prepared by thermal evaporation of pure Cu and Ni metals onto Si(100) sur- face in high vacuum; it was sputtered using argon ion beam in ultra-high vacuum. The ion beam-induced surface and interface modification was investigated using X-ray photoelectron spectroscopy and atomic force ...

  7. Scanning electron microscopy of the surfaces of ion implanted SiC

    Science.gov (United States)

    Malherbe, Johan B.; van der Berg, N. G.; Kuhudzai, R. J.; Hlatshwayo, T. T.; Thabethe, T. T.; Odutemowo, O. S.; Theron, C. C.; Friedland, E.; Botha, A. J.; Wendler, E.

    2015-07-01

    This paper gives a brief review of radiation damage caused by particle (ions and neutrons) bombardment in SiC at different temperatures, and its annealing, with an expanded discussion on the effects occurring on the surface. The surface effects were observed using SEM (scanning electron microscopy) with an in-lens detector and EBSD (electron backscatter diffraction). Two substrates were used, viz. single crystalline 6H-SiC wafers and polycrystalline SiC, where the majority of the crystallites were 3C-SiC. The surface modification of the SiC samples by 360 keV ion bombardment was studied at temperatures below (i.e. room temperature), just at (i.e. 350 °C), or above (i.e. 600 °C) the critical temperature for amorphization of SiC. For bombardment at a temperature at about the critical temperature an extra step, viz. post-bombardment annealing, was needed to ascertain the microstructure of bombarded layer. Another aspect investigated was the effect of annealing of samples with an ion bombardment-induced amorphous layer on a 6H-SiC substrate. SEM could detect that this layer started to crystalize at 900 °C. The resulting topography exhibited a dependence on the ion species. EBSD showed that the crystallites forming in the amorphized layer were 3C-SiC and not 6H-SiC as the substrate. The investigations also pointed out the behaviour of the epitaxial regrowth of the amorphous layer from the 6H-SiC interface.

  8. Roughening instability and ion-induced viscous relaxation of SiO2 surfaces

    International Nuclear Information System (INIS)

    Mayer, T.M.; Chason, E.; Howard, A.J.

    1994-01-01

    We characterize the development of nanometer scale topography (roughness) on SiO 2 surfaces as a result of low energy, off-normal ion bombardment, using in situ energy dispersive x-ray reflectivity and atomic force microscopy. Surfaces roughen during sputtering by heavy ions (Xe), with roughness increasing approximately linearly with ion fluence up to 10 17 cm -2 . A highly coherent ripple structure with wavelength of 30 nm and oriented with the wave vector parallel to the direction of incidence is observed after Xe sputtering at 1 keV. Lower frequency, random texture is also observed. Subsequent light ion (H, He) bombardment smoothens preroughened surfaces. The smoothing kinetics are first order with ion fluence and strongly dependent on ion energy in the range 0.2--1 eV. We present a linear model to account for the experimental observations which includes roughening both by random stochastic processes and by development of a periodic surface instability due to sputter yield variations with surface curvature which leads to ripple development. Smoothing occurs via ion bombardment induced viscous flow and surface diffusion. From the smoothing kinetics with H and He irradiation we measure the radiation enhanced viscosity of SiO 2 and find values on the order of 1--20x10 12 N s m -2 . The viscous relaxation per ion scales as the square root of the ion induced displacements in the film over the range of the ion penetration, suggesting short-lived defects with a bimolecular annihilation mechanism. The surface instability mechanism accounts for the ripple formation, while inclusion of stochastic roughening produces the random texture and reproduces the observed linear roughening kinetics and the magnitude of the overall roughness

  9. Low energy ion beam modification of Cu/Ni/Si(100) surface

    Indian Academy of Sciences (India)

    1569–1573. c Indian Academy of Sciences. Low energy ion beam modification of Cu/Ni/Si(100) surface. S K PARIDAa, V R R MEDICHERLAa,∗. , D K MISHRAa, S CHOUDHARYb, V SOLANKIb and. SHIKHA VARMAb. aDepartment of Physics, Institute of Technical Education & Research, Siksha 'O' Anusandhan University,.

  10. Nanofabrication on a Si surface by slow highly charged ion impact

    International Nuclear Information System (INIS)

    Tona, Masahide; Watanabe, Hirofumi; Takahashi, Satoshi; Nakamura, Nobuyuki; Yoshiyasu, Nobuo; Sakurai, Makoto; Terui, Toshifumi; Mashiko, Shinro; Yamada, Chikashi; Ohtani, Shunsuke

    2007-01-01

    We have observed surface chemical reactions which occur at the impact sites on a Si(1 1 1)-(7 x 7) surface and a highly oriented pyrolytic graphite (HOPG) surface bombarded by highly charged ions (HCIs) by using a scanning tunneling microscope (STM). Crater structures are formed on the Si(1 1 1)-(7 x 7) surface by single I 50+ -impacts. STM-observation for the early step of oxidation on the surface suggests that the impact site is so active that dangling bonds created by HCI impacts are immediately quenched by reaction with residual gas molecules. We show also the selective adsorption of organic molecules at a HCI-induced impact site on the HOPG surface

  11. Radicals and ions controlling by adjusting the antenna-substrate distance in a-Si:H deposition using a planar ICP for c-Si surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, H.P., E-mail: haipzhou@uestc.edu.cn [School of Energy Science and Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Ave., West High-Tech Zone, Chengdu, Sichuan, 611731 (China); Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xu, S., E-mail: shuyan.xu@nie.edu.sg [Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xu, M. [Key Laboratory of Information Materials of Sichuan Province & School of Electrical and Information Engineering, Southwest University for Nationalities, Chengdu, 610041 (China); Xu, L.X.; Wei, D.Y. [Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xiang, Y. [School of Energy Science and Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Ave., West High-Tech Zone, Chengdu, Sichuan, 611731 (China); Xiao, S.Q. [Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122 (China)

    2017-02-28

    Highlights: • A planar ICP was used to grow a-Si:H films for c-Si surface passivation. • The direct- and remote-plasma was compared for high-quality c-Si surface passivation. • The remote ICP with controlled plasma species and ion bombardments is preferable for the surface passivation of c-Si. - Abstract: Being a key issue in the research and fabrication of silicon heterojunction (SHJ) solar cells, crystalline silicon (c-Si) surface passivation is theoretically and technologically intricate due to its complicate dependence on plasma characteristics, material properties, and plasma-material interactions. Here amorphous silicon (a-Si:H) grown by a planar inductively coupled plasma (ICP) reactor working under different antenna-substrate distances of d was used for the surface passivation of low-resistivity p-type c-Si. It is found that the microstructures (i.e., the crystallinity, Si-H bonding configuration etc.) and passivation function on c-Si of the deposited a-Si:H were profoundly influenced by the parameter of d, which primarily determines the types of growing precursors of SiH{sub n}/H contributing to the film growth and the interaction between the plasma and growing surface. c-Si surface passivation is analyzed in terms of the d-dependent a-Si:H properties and plasma characteristics. The controlling of radical types and ion bombardment on the growing surface through adjusting parameter d is emphasized.

  12. Heavy ion induced disorder introduction in the surface and at shallow depths in Si

    International Nuclear Information System (INIS)

    Roosendaal, H.E.; Weick, M.; Hubbes, H.H.; Lutz, H.O.

    1979-01-01

    Disorder in a Si lattice has been produced by bombardment with 220 and 290 keV C + , N + , Ne + and Ar + ions. The production of surface disorder is compared with the disorder production at shallow depths. For random incidence of the damaging projectiles, the surface disorder has been found to scale with the disorder at shallow depths (380 to 800 A). For channeling incidence, a Z 1 dependent reduction of the surface disorder is observed. This reduction is much smaller than that for the disorder in the depth interval 380 to 800 A. (author)

  13. Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing.

    Science.gov (United States)

    Ye, Chao; Ran, Guang; Zhou, Wei; Shen, Qiang; Feng, Qijie; Lin, Jianxin

    2017-10-25

    Single crystal 6H-SiC wafers with 4° off-axis [0001] orientation were irradiated with carbon ions and then annealed at 900 °C for different time periods. The microstructure and surface morphology of these samples were investigated by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Ion irradiation induced SiC amorphization, but the surface was smooth and did not have special structures. During the annealing process, the amorphous SiC was recrystallized to form columnar crystals that had a large amount of twin structures. The longer the annealing time was, the greater the amount of recrystallized SiC would be. The recrystallization volume fraction was accorded with the law of the Johnson-Mehl-Avrami equation. The surface morphology consisted of tiny pieces with an average width of approximately 30 nm in the annealed SiC. The volume shrinkage of irradiated SiC layer and the anisotropy of newly born crystals during annealing process produced internal stress and then induced not only a large number of dislocation walls in the non-irradiated layer but also the initiation and propagation of the cracks. The direction of dislocation walls was perpendicular to the growth direction of the columnar crystal. The longer the annealing time was, the larger the length and width of the formed crack would be. A quantitative model of the crack growth was provided to calculate the length and width of the cracks at a given annealing time.

  14. Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing

    Directory of Open Access Journals (Sweden)

    Chao Ye

    2017-10-01

    Full Text Available Single crystal 6H-SiC wafers with 4° off-axis [0001] orientation were irradiated with carbon ions and then annealed at 900 °C for different time periods. The microstructure and surface morphology of these samples were investigated by grazing incidence X-ray diffraction (GIXRD, scanning electron microscopy (SEM, and transmission electron microscopy (TEM. Ion irradiation induced SiC amorphization, but the surface was smooth and did not have special structures. During the annealing process, the amorphous SiC was recrystallized to form columnar crystals that had a large amount of twin structures. The longer the annealing time was, the greater the amount of recrystallized SiC would be. The recrystallization volume fraction was accorded with the law of the Johnson–Mehl–Avrami equation. The surface morphology consisted of tiny pieces with an average width of approximately 30 nm in the annealed SiC. The volume shrinkage of irradiated SiC layer and the anisotropy of newly born crystals during annealing process produced internal stress and then induced not only a large number of dislocation walls in the non-irradiated layer but also the initiation and propagation of the cracks. The direction of dislocation walls was perpendicular to the growth direction of the columnar crystal. The longer the annealing time was, the larger the length and width of the formed crack would be. A quantitative model of the crack growth was provided to calculate the length and width of the cracks at a given annealing time.

  15. Dissociative scattering of low-energy SiF{sub 3}{sup +} and SiF{sup +} ions (5-200 eV) on Cu(100) surface

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, Hiroyuki; Baba, Yuji; Sasaki, T.A. [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    1997-03-01

    Dissociative scattering of molecular SiF{sub 3}{sup +} and SiF{sup +} ions from a Cu(100) single crystal surface has been investigated in the incident energy range from 5 eV to 200 eV with a scattering angle of 77deg. The scattered ion intensity of dissociative ions and parent molecular ions were measured as a function of incident ion energy. The observed data show that onset energies of dissociation for SiF{sub 3}{sup +} and SiF{sup +} ions are 30 eV and 40 eV, respectively. The obtained threshold energies are consistent with a impulsive collision model where the dissociation of incident ion is caused by vibrational excitation during collision. (author)

  16. Si+ ion implantation reduces the bacterial accumulation on the Ti6Al4V surface

    International Nuclear Information System (INIS)

    Gallardo-Moreno, A M; Pacha-Olivenza, M A; Perera-Nunez, J; Gonzalez-Carrasco, J L; Gonzalez-Martin, M L

    2010-01-01

    Ti6Al4V is one of the most commonly used biomaterials in orthopedic applications due to its interesting mechanical properties and reasonable biocompatibility. Nevertheless, after the implantation, microbial adhesion to its surface can provoke severe health problems associated to the development of biofilms and subsequent infectious processes. This work shows a modification of the Ti6Al4V surface by Si+ ion implantation which reduces the bacterial accumulation under shear forces. Results have shown that the number of bacteria remaining on the surface at the end of the adhesion experiments decreased for silicon-treated surface. In general, the new surface also behaved as less adhesive under in vitro flow conditions. Since no changes are observed in the electrical characteristics between the control and implanted samples, differences are likely related to small changes observed in hydrophobicity.

  17. Potassium ions in SiO2: electrets for silicon surface passivation

    Science.gov (United States)

    Bonilla, Ruy S.; Wilshaw, Peter R.

    2018-01-01

    This manuscript reports an experimental and theoretical study of the transport of potassium ions in thin silicon dioxide films. While alkali contamination was largely researched in the context of MOSFET instability, recent reports indicate that potassium ions can be embedded into oxide films to produce dielectric materials with permanent electric charge, also known as electrets. These electrets are integral to a number of applications, including the passivation of silicon surfaces for optoelectronic devices. In this work, electric field assisted migration of ions is used to rapidly drive K+ into SiO2 and produce effective passivation of silicon surfaces. Charge concentrations of up to ~5  ×  1012 e cm‑2 have been achieved. This charge was seen to be stable for over 1500 d, with decay time constants as high as 17 000 d, producing an effectively passivated oxide–silicon interface with SRV  <  7 cm s‑1, in 1 Ω cm n-type material. This level of charge stability and passivation effectiveness has not been previously reported. Overall, this is a new and promising methodology to enhance surface passivation for the industrial manufacture of silicon optoelectronic devices.

  18. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    International Nuclear Information System (INIS)

    Kaushik, Priya Darshni; Ivanov, Ivan G.; Lin, Pin-Cheng; Kaur, Gurpreet; Eriksson, Jens; Lakshmi, G.B.V.S.; Avasthi, D.K.; Gupta, Vinay; Aziz, Anver; Siddiqui, Azher M.; Syväjärvi, Mikael; Yazdi, G. Reza

    2017-01-01

    Highlights: • For the first time the gas sensing application of SHI irradiated epitaxial graphene on SiC is explored. • Surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles. • Existence of an optimal fluence which maximize the gas sensing response towards NO 2 and NH 3 gases. - Abstract: In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 10 13 ions/cm 2 ). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and spintronic

  19. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    Energy Technology Data Exchange (ETDEWEB)

    Kaushik, Priya Darshni, E-mail: kaushik.priyadarshni@gmail.com [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Ivanov, Ivan G.; Lin, Pin-Cheng [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Kaur, Gurpreet [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Eriksson, Jens [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Lakshmi, G.B.V.S. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Avasthi, D.K. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Amity Institute of Nanotechnology, Noida 201313 (India); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Aziz, Anver; Siddiqui, Azher M. [Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Syväjärvi, Mikael [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Yazdi, G. Reza, E-mail: yazdi@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden)

    2017-05-01

    Highlights: • For the first time the gas sensing application of SHI irradiated epitaxial graphene on SiC is explored. • Surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles. • Existence of an optimal fluence which maximize the gas sensing response towards NO{sub 2} and NH{sub 3} gases. - Abstract: In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 10{sup 13} ions/cm{sup 2}). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and

  20. Core-shell Si/Cu nanocomposites synthesized by self-limiting surface reaction as anodes for lithium ion batteries

    Science.gov (United States)

    Xu, Kaiqi; Zhang, Zhizhen; Su, Wei; Huang, Xuejie

    Core-shell Si/Cu nanocomposites were synthesized via a flexible self-limiting surface reaction without extra reductant for the first time. The nano Si was uniformly coated with Cu nanoparticles with a diameter of 5-10nm, which can enhance the electronic conductivity of the nanocomposites and buffer the huge volume change during charge/discharge owing to its high ductility. Benefited from the unique structure, the Si/Cu nanocomposites exhibited a good electrochemical performance as anodes for lithium ion batteries, which exhibited a capacity retention of 656mAh/g after 50 cycles and a coulombic efficiency of more than 99%.

  1. Dynamic secondary ion mass spectroscopy of Au nanoparticles on Si wafer using Bi3+ as primary ion coupled with surface etching by Ar cluster ion beam: The effect of etching conditions on surface structure

    Science.gov (United States)

    Park, Eun Ji; Choi, Chang Min; Kim, Il Hee; Kim, Jung-Hwan; Lee, Gaehang; Jin, Jong Sung; Ganteför, Gerd; Kim, Young Dok; Choi, Myoung Choul

    2018-01-01

    Wet-chemically synthesized Au nanoparticles were deposited on Si wafer surfaces, and the secondary ions mass spectra (SIMS) from these samples were collected using Bi3+ with an energy of 30 keV as the primary ions. In the SIMS, Au cluster cations with a well-known, even-odd alteration pattern in the signal intensity were observed. We also performed depth profile SIMS analyses, i.e., etching the surface using an Ar gas cluster ion beam (GCIB), and a subsequent Bi3+ SIMS analysis was repetitively performed. Here, two different etching conditions (Ar1600 clusters of 10 keV energy or Ar1000 of 2.5 keV denoted as "harsh" or "soft" etching conditions, respectively) were used. Etching under harsh conditions induced emission of the Au-Si binary cluster cations in the SIMS spectra of the Bi3+ primary ions. The formation of binary cluster cations can be induced by either fragmentation of Au nanoparticles or alloying of Au and Si, increasing Au-Si coordination on the sample surface during harsh GCIB etching. Alternatively, use of the soft GCIB etching conditions resulted in exclusive emission of pure Au cluster cations with nearly no Au-Si cluster cation formation. Depth profile analyses of the Bi3+ SIMS combined with soft GCIB etching can be useful for studying the chemical environments of atoms at the surface without altering the original interface structure during etching.

  2. Surface damage on polycrystalline $\\beta$-SiC by xenon ion irradiation at high fluence

    OpenAIRE

    Baillet, J.; Gavarini, S.; Millard-Pinard, N.; Garnier, V.; Peaucelle, C.; Jaurand, X.; Duranti, A.; Bernard, C.; Rapegno, R.; Cardinal, S.; Escobar-Sawa, L; De Echave, T.; Lanfant, B.; Leconte, Y.

    2018-01-01

    International audience; Nano-grained $\\beta$-silicon carbide ($\\beta$-SiC) pellets were prepared by Spark Plasma Sintering (SPS). These were implanted at room temperature with 800 keV xenon at ion fluences of 5.10$^{15}$ and 1.10$^{17}$ cm$^{-2}$. Microstructural modifications were studied by electronic microscopy (TEM and SEM) and xenon profiles were determined by Rutherford Backscattering Spectroscopy (RBS). A complete amorphization of the implanted area associated with a significant oxidat...

  3. Near-surface recrystallization of the amorphous implanted layer of ion implanted 6H-SiC

    Science.gov (United States)

    Kuhudzai, R. J.; van der Berg, N. G.; Malherbe, J. B.; Hlatshwayo, T. T.; Theron, C. C.; Buys, A. V.; Botha, A. J.; Wendler, E.; Wesch, W.

    2014-08-01

    The recrystallization and subsequent crystal growth during annealing of amorphous surface layers on 6H-SiC produced by ion implantation is investigated. Amorphous surface layers were produced by ion implantation of 360 keV ions of iodine, silver, xenon, cesium and strontium into single crystalline 6H-silicon carbide samples. The ion fluence for all the implantations were in the order of 1016 cm-2. Vacuum annealing of the damaged silicon carbide samples was then performed. The microstructure of SiC surfaces before and after annealing was investigated using a high resolution field emission scanning electron microscope (SEM). SEM analysis was complimented by Atomic Force Microscopy (AFM). SEM images acquired by an in-lens detector using an accelerating voltage of 2 kV show nano-crystallites developed for all implanted samples after annealing. Larger and more faceted crystallites along with elongated thin crystallites were observed for iodine and xenon implanted 6H-SiC. Crystallites formed on surfaces implanted with strontium and cesium were smaller and less faceted. Strontium, silver and cesium implanted samples also exhibited more cavities on the surface. AFM was used to evaluate the effect of annealing on the surface roughness. For all the amorphous surfaces which were essentially featureless, the root mean square (rms) roughness was approximately 1 nm. The roughness increased to approximately 17 nm for the iodine implanted sample after annealing with the surface roughness below this value for all the other samples. AFM also showed that the largest crystals grew to heights of about 17, 20, 45, 50 and 65 nm for Sr, Cs, Ag, Xe and I implanted samples after annealing at 1200 °C for 5 h respectively. SEM images and AFM analysis suggest that iodine is more effective in promoting crystal growth during the annealing of bombardment-induced amorphous SiC layers than the rest of the ions we implanted. In samples of silicon carbide co-implanted with iodine and silver, few

  4. Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces

    International Nuclear Information System (INIS)

    Portavoce, A; Kammler, M; Hull, R; Reuter, M C; Ross, F M

    2006-01-01

    We investigate the fundamental mechanism by which self-assembled Ge islands can be nucleated at specific sites on Si(001) using ultra-low-dose focused ion beam (FIB) pre-patterning. Island nucleation is controlled by a nanotopography that forms after the implantation of Ga ions during subsequent thermal annealing of the substrate. This nanotopography evolves during the annealing stage, changing from a nanoscale annular depression associated with each focused ion beam spot to a nanoscale pit, and eventually disappearing (planarizing). The correspondence of Ge quantum dot nucleation sites to the focused ion beam features requires a growth surface upon which the nanotopography is preserved. A further key observation is that the Ge wetting layer thickness is reduced in patterned regions, allowing the formation of islands on the templated regions without nucleation elsewhere. These results provide routes to the greatly enhanced design and control of quantum dot distributions and dimensions

  5. Ion beam processes in Si

    International Nuclear Information System (INIS)

    Holland, O.W.; Narayan, J.; Fathy, D.

    1984-07-01

    Observation of the effects of implants of energetic ions at high dose rates into Si have produced some exciting and interesting results. The mechanism whereby displacement damage produced by ions self-anneals during high dose rate implantation is discussed. It is shown that ion beam annealing (IBA) offers in certain situations unique possibilities for damage annealing. Annealing results of the near surface in Si with a buried oxide layer, formed by high dose implantation, are presented in order to illustrate the advantages offered by IBA. It is also shown that ion irradiation can stimulate the epitaxial recrystallization of amorphous overlayers in Si. The nonequilibrium alloying which results from such epitaxial processes is discussed as well as mechanisms which limit the solid solubility during irradiation. Finally, a dose rate dependency for the production of stable damage by ion irradiation at a constant fluence has been observed. For low fluence implants, the amount of damage is substantially greater in the case of high flux rather than low flux implantation

  6. FY1995 study on the low energy reaction of Si surface with halogen atoms and positive and negative ions; 1995 nendo harogen genshi, sei/fu ion to Si hyomen hanno no teisonshoka kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    For the damageless fabrication of nanometer-electronics devices, low energy and damage-free surface reactions have been investigated as follows. (1) Negative ion etching of silicon has been investigated in SF{sub 6} and Cl{sub 2} plasma. (2) To establish the self-limiting reaction process which is necessary to realize the atomically layer-by-layer etching, the initial reaction of fluorine (F) atoms and F{sub 2} molecules with hydrogen (H)-terminated Si (111) has been studied. In both SF{sub 6} and Cl{sub 2} plasma etching, the etching reactivity of negative ions was proved to be higher than those of positive ions, since negative ions are atomical like the radical. A notch-free etching of n+ poly-silicon with 0.3{mu}m L and S pattern was successfully obtained by an alternative irradiation of positive and negative ions in SF{sub 6} plasma. For SiO{sub 2} and other oxide etching with negative ions the high rate was observed but not with high selectivity. Negative ion-assisted Si oxidation was found to be one order faster than radical and thermal oxidations. Based on the ATR and XPS measurements, F atom/H-terminated Si(111) surface reaction has been revealed. First F radicals penetrates just underneath of the Si-H bond, generating the B{sub 2} peak. Further exposure appear the B{sub 3} peak which arises from the bonding of a F atom with a Si-H bond at the five-coordination state. However, more exposure of F atoms caused higher order SiF{sub x}(x=l,2,3) products. Hence, F{sub 2} gas which was less reactive than F atoms was investigated. It was found out that the exposure of 5 % F{sub 2}/He to H-terminated Si (111) reached a plateau value at 5{sub x}10{sup 5} L where terminated H atoms quite disappeared. The SiF monolayer corresponded exactly to an atomic layer of Si(111) was formed. This indicates that the self-limiting process for the Si/F system has been realized first. (NEDO)

  7. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    Science.gov (United States)

    Kaushik, Priya Darshni; Ivanov, Ivan G.; Lin, Pin-Cheng; Kaur, Gurpreet; Eriksson, Jens; Lakshmi, G. B. V. S.; Avasthi, D. K.; Gupta, Vinay; Aziz, Anver; Siddiqui, Azher M.; Syväjärvi, Mikael; Yazdi, G. Reza

    2017-05-01

    In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 1013 ions/cm2). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and spintronic applications.

  8. Potential sputtering of protons from hydrogen- and H sub 2 O-terminated Si(1 0 0) surfaces with slow highly charged ions

    CERN Document Server

    Kuroki, K; Yamazaki, Y

    2003-01-01

    A potential sputtering mechanism of hydrogen has been studied for impacts of slow highly charged Xe sup q sup + ions (<5 keV, q=4-12) on well-defined H-terminated and water-saturated Si(1 0 0) surfaces. It was found that the sputtering yields of protons were proportional to q supgamma (gamma approx 5) for both the Si(1 0 0)2x1-H and Si(1 0 0)1x1-H surfaces, although the absolute yield for the Si(1 0 0)1x1-H surface was 10 times larger than that for the Si(1 0 0)2x1-H surface, i.e. the sputtering efficiency per one H-Si bond for the Si(1 0 0)1x1-H surface is five times larger that for the Si(1 0 0)2x1-H surface. The proton sputtering efficiency from a H-O-Si bond was extracted from measurements of the water-saturated surface, which was approx 8 times larger than the H-Si bond of the Si(1 0 0)2x1-H surface. An effective distance of the proton from its substrate was proposed to be the key parameter to govern the yield, which also influences the energy distributions of sputtered protons. These findings are con...

  9. Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species

    Science.gov (United States)

    Ayedh, H. M.; Hallén, A.; Svensson, B. G.

    2015-11-01

    The carbon vacancy (VC) is a prevailing point defect in high-purity 4H-SiC epitaxial layers, and it plays a decisive role in controlling the charge carrier lifetime. One concept of reducing the VC-concentration is based on carbon self-ion implantation in a near surface layer followed by thermal annealing. This leads to injection of carbon interstitials (Ci's) and annihilation of VC's in the epi-layer "bulk". Here, we show that the excess of C atoms introduced by the self-ion implantation plays a negligible role in the VC annihilation. Actually, employing normalized implantation conditions with respect to displaced C atoms, other heavier ions like Al and Si are found to be more efficient in annihilating VC's. Concentrations of VC below ˜2 × 1011 cm-3 can be reached already after annealing at 1400 °C, as monitored by deep-level transient spectroscopy. This corresponds to a reduction in the VC-concentration by about a factor of 40 relative to the as-grown state of the epi-layers studied. The negligible role of the implanted species itself can be understood from simulation results showing that the concentration of displaced C atoms exceeds the concentration of implanted species by two to three orders of magnitude. The higher efficiency for Al and Si ions is attributed to the generation of collision cascades with a sufficiently high energy density to promote Ci-clustering and reduce dynamic defect annealing. These Ci-related clusters will subsequently dissolve during the post-implant annealing giving rise to enhanced Ci injection. However, at annealing temperatures above 1500 °C, thermodynamic equilibrium conditions start to apply for the VC-concentration, which limit the net effect of the Ci injection, and a competition between the two processes occurs.

  10. Room-temperature vacancy migration in crystalline Si from an ion-implanted surface layer

    DEFF Research Database (Denmark)

    Larsen, Arne Nylandsted; Christensen, Carsten; Petersen, Jon Wulff

    1999-01-01

    examined, the vacancies migrate to a maximum depth of about 1 µm and at least one vacancy per implanted Ge ion migrates into the silicon crystal. The annealing of the E centers is accompanied, in an almost one-to-one fashion, by the appearance of a new DLTS line corresponding to a level at EC...

  11. Effect of 100 MeV Ag{sup +7} ion irradiation on the bulk and surface magnetic properties of Co–Fe–Si thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hysen, T., E-mail: hysenthomas@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Department of Physics, Christian College, Chengannur, Kerala 689 122 (India); Geetha, P. [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Al-Harthi, Salim; Al-Omari, I.A. [Department of Physics, College of Science, Sultan Qaboos University, Al Khod 123 (Oman); Lisha, R. [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Ramanujan, R.V. [School of Materials Science and Engineering, Nanyang Technological University, Singapore 639 798 (Singapore); Sakthikumar, D. [Graduate School of Interdisciplinary New Science, Toyo University, Kawagoe (Japan); Avasthi, D.K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Anantharaman, M.R., E-mail: mra@cusat.ac.in [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India)

    2014-12-15

    Thin films of Co–Fe–Si were vacuum evaporated on pre-cleaned float glass substrates employing thermal evaporation. The films were subsequently irradiated with 100 MeV Ag{sup +7} ions at fluences of 1×10{sup 11}, 1×10{sup 12} and 1×10{sup 13} ions/cm{sup 2}. The pristine and irradiated samples were subjected to surface analysis using Atomic Force Microscopy (AFM), Vibrating Sample Magnetometry (VSM) and Magneto Optic Kerr Effect (MOKE) measurements. The as deposited film has a root mean square roughness (Rq) of 8.9 nm and an average roughness of (Ra) 5.6 nm. Irradiation of the as deposited films with 100 MeV Ag{sup 7+} ions modifies the surface morphology. Irradiating with ions at fluences of 1×10{sup 11} ions/cm{sup 2} smoothens the mesoscopic hill-like structures, and then, at 1×10{sup 12} ions/cm{sup 2} new surface structures are created. When the fluence is further increased to 1×10{sup 13} ions/cm{sup 2} an increase in the surface roughness is observed. The MOKE loop of as prepared film indicated a squareness ratio of 0.62. As the film is irradiated with fluences of 1×10{sup 11} ions/cm{sup 2}, 1×10{sup 12} ions/cm{sup 2} and 1×10{sup 13} ions/cm{sup 2} the squareness ratio changes to 0.76, 0.8 and 0.86 respectively. This enhancement in squareness ratio towards 1 is a typical feature when the exchange interaction starts to dominates the inherent anisotropies in the system. The variation in surface magnetisation is explained based on the variations in surface roughness with swift heavy ion (SHI) irradiation. - Highlights: • We have irradiated thermally evaporated Co–Fe–Si thin films on glass substrate with 100 MeV Ag{sup +7} ions using the 15 UD Pelletron Accelerator at IUAC, New Delhi, India. • Surface morphology and magnetic characteristics of the films can be altered with ion irradiation. • It was observed that the variation in surface magnetic properties correlates well with the changes in surface morphology, further reiterating the

  12. TEM investigation of the surface layer structure [111]{sub B2} of the single NiTi crystal modified by the Si-ion beam implantation

    Energy Technology Data Exchange (ETDEWEB)

    Girsova, S. L., E-mail: girs@ispms.tsc.ru; Poletika, T. M., E-mail: poletm@ispms.tsc.ru [Institute of Strength Physics and Materials Science SB RAS, Tomsk, 634055 (Russian Federation); Meisner, S. N., E-mail: msn@ispms.tsc.ru; Meisner, L. L., E-mail: llm@ispms.tsc.ru [Institute of Strength Physics and Materials Science SB RAS, Tomsk, 634055 (Russian Federation); National Research Tomsk State University, Tomsk, 634050 (Russian Federation)

    2015-10-27

    The study was carried on for the single NiTi crystals subjected to the Si-ion beam implantation. Using the transmission electron microscopy technique (TEM), the surface layer structure [111]{sub B2} was examined for the treated material. The modified near-surface sublayers were found to have different composition. Thus the uppermost sublayer contained mostly oxides; the lower-lying modified sublayer material was in an amorphous state and the thin underlying sublayer had a defect structure.

  13. Structural, surface potential and optical studies of AlGaN based double heterostructures irradiated by 120 MeV Si{sup 9+} swift heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Arivazhagan, P., E-mail: arivazhaganau2008@gmail.com [Crystal Growth Centre, Anna University, Chennai, 600 025 (India); Ramesh, R.; Balaji, M. [Crystal Growth Centre, Anna University, Chennai, 600 025 (India); Asokan, K. [Inter-University Accelerator Centre (IUAC), New Delhi (India); Baskar, K. [Crystal Growth Centre, Anna University, Chennai, 600 025 (India)

    2016-09-15

    The Al{sub 0.33}Ga{sub 0.77}N/Al{sub 0.14}Ga{sub 0.86}N based double heterostructure was irradiated using Si{sup 9+} ion at room temperature (RT) and liquid nitrogen temperature (LNT) with four dissimilar ion fluence. The effect of Si{sup 9+} ion irradiation in dislocation densities and in-plane strain of GaN layer were discussed. The in-plane strain values of Al{sub x}Ga{sub 1-x}N layers were calculated from asymmetric reciprocal space mapping (RSM). The surface modification and the variation in phase shift on Al{sub 0.33}Ga{sub 0.77}N surfaces due to the irradiation were measured by Electrostatic Force Microscopy (EFM). The capacitance of the tip-sample system was determined from EFM. The band edge emissions of heterostructures were measured by the room temperature phototluminescence (PL) and the shift in the Al{sub 0.14}Ga{sub 0.86}N active layer emission peaks towards the low energy side at low fluence ion irradiation has been noted. - Highlights: • Effects of Si{sup 9+} ion irradiation on AlGaN double heterostructures were investigated. • Dislocation densities of GaN reduced at liquid nitrogen temperature irradiation. • Variation in phase shift on Al{sub 0.33}Ga{sub 0.77}N surfaces was measured by EFM. • Capacitance per unit area values of AFM tip-sample surface system were calculated. • Si{sup 9+} irradiations play an important role to tune the energy gap in Al{sub 0.14}Ga{sub 0.86}N.

  14. Sharp transition from ripple patterns to a flat surface for ion beam erosion of Si with simultaneous co-deposition of iron

    Directory of Open Access Journals (Sweden)

    K. Zhang

    2012-09-01

    Full Text Available We investigate pattern formation on Si by sputter erosion under simultaneous co-deposition of Fe atoms, both at off-normal incidence, as function of the Fe surface coverage. The patterns obtained for 5 keV Xe ion irradiation at 30° incidence angle are analyzed with atomic force microscopy. Rutherford backscattering spectroscopy of the local steady state Fe content of the Fe-Si surface layer allows a quantitative correlation between pattern type and Fe coverage. With increasing Fe coverage the patterns change, starting from a flat surface at low coverage (1.8×1016 Fe/cm2. Our results confirm the observations by Macko et al. for 2 keV Kr ion irradiation of Si with Fe co-deposition. In particular, we also find a sharp transition from pronounced ripple patterns with large amplitude (rms roughness ∼ 18 nm to a rather flat surface (rms roughness ∼ 0.5 nm. Within this transition regime, we also observe the formation of pill bug structures, i.e. individual small hillocks with a rippled structure on an otherwise rather flat surface. The transition occurs within a very narrow regime of the steady state Fe surface coverage between 1.7 and 1.8×1016 Fe/cm2, where the composition of the mixed Fe-Si surface layer of about 10 nm thickness reaches the stoichiometry of FeSi2. Phase separation towards amorphous iron silicide is assumed as the major contribution for the pattern formation at lower Fe coverage and the sharp transition from ripple patterns to a flat surface.

  15. Effect of additional sample bias in Meshed Plasma Immersion Ion Deposition (MPIID) on microstructural, surface and mechanical properties of Si-DLC films

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Mingzhong [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); School of Materials Science & Engineering, Jiamusi University, Jiamusi 154007 (China); Tian, Xiubo, E-mail: xiubotian@163.com [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); Li, Muqin [School of Materials Science & Engineering, Jiamusi University, Jiamusi 154007 (China); Gong, Chunzhi [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); Wei, Ronghua [Southwest Research Institute, San Antonio, TX 78238 (United States)

    2016-07-15

    Highlights: • A novel Meshed Plasma Immersion Ion Deposition is proposed. • The deposited Si-DLC films possess denser structures and high deposition rate. • It is attributed to ion bombardment of the deposited films. • The ion energy can be independently controlled by an additional bias (novel set up). - Abstract: Meshed Plasma Immersion Ion Deposition (MPIID) using cage-like hollow cathode discharge is a modified process of conventional PIID, but it allows the deposition of thick diamond-like carbon (DLC) films (up to 50 μm) at a high deposition rate (up to 6.5 μm/h). To further improve the DLC film properties, a new approach to the MPIID process is proposed, in which the energy of ions incident to the sample surface can be independently controlled by an additional voltage applied between the samples and the metal meshed cage. In this study, the meshed cage was biased with a pulsed DC power supply at −1350 V peak voltage for the plasma generation, while the samples inside the cage were biased with a DC voltage from 0 V to −500 V with respect to the cage to study its effect. Si-DLC films were synthesized with a mixture of Ar, C{sub 2}H{sub 2} and tetramethylsilane (TMS). After the depositions, scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectrons spectroscopy (XPS), Raman spectroscopy and nanoindentation were used to study the morphology, surface roughness, chemical bonding and structure, and the surface hardness as well as the modulus of elasticity of the Si-DLC films. It was observed that the intense ion bombardment significantly densified the films, reduced the surface roughness, reduced the H and Si contents, and increased the nanohardness (H) and modulus of elasticity (E), whereas the deposition rate decreased slightly. Using the H and E data, high values of H{sup 3}/E{sup 2} and H/E were obtained on the biased films, indicating the potential excellent mechanical and tribological properties of the films. In this

  16. Anodes for Lithium-Ion Batteries Based on Type I Silicon Clathrate Ba8Al16Si30- Role of Processing on Surface Properties and Electrochemical Behavior.

    Science.gov (United States)

    Zhao, Ran; Bobev, Svilen; Krishna, Lakshmi; Yang, Ting; Weller, J Mark; Jing, Hangkun; Chan, Candace K

    2017-11-29

    Type I silicon clathrates based on Ba 8 Al y Si 46-y (8 lithium-ion batteries and display electrochemical properties that are distinct from those found in conventional silicon anodes. Processing steps such as ball-milling (typically used to reduce the particle size) and acid/base treatment (used to remove nonclathrate impurities) may modify the clathrate surface structure or introduce defects, which could affect the observed electrochemical properties. In this work, we perform a systematic investigation of Ba 8 Al y Si 46-y clathrates with y ≈ 16, i.e, having a composition near Ba 8 Al 16 Si 30 , which perfectly satisfies the Zintl condition. The roles of ball-milling and acid/base treatment were investigated using electrochemical, X-ray diffraction, electron microscopy, X-ray photoelectron and Raman spectroscopy analysis. The results showed that acid/base treatment removed impurities from the synthesis, but also led to formation of a surface oxide layer that inhibited lithiation. Ball-milling could remove the surface oxide and result in the formation of an amorphous surface layer, with the observed charge storage capacity correlated with the thickness of this amorphous layer. According to the XRD and electrochemical analysis, all lithiation/delithiation processes are proposed to occur in single phase reactions at the surface with no discernible changes to the crystal structure in the bulk. Electrochemical impedance spectroscopy results suggest that the mechanism of lithiation is through surface-dominated, Faradaic processes. This suggests that for off-stoichiometric clathrates, as we studied in our previous work, Li + insertion at defects or vacancies on the framework may be the origin of reversible Li cycling. However, for clathrates Ba 8 Al y Si 46-y with y ≈ 16, Li insertion in the structure is unfavorable and low capacities are observed unless amorphous surface layers are introduced by ball-milling.

  17. Underling modification in ion beam induced Si wafers

    International Nuclear Information System (INIS)

    Hazra, S.; Chini, T.K.; Sanyal, M.K.; Grenzer, J.; Pietsch, U.

    2005-01-01

    Subsurface (amorphous-crystalline interface) structure of keV ion beam modified Si(001) wafers was studied for the first time using non-destructive technique and compared with that of the top one. Ion-beam modifications of the Si samples were done using state-of-art high-current ion implanter facility at Saha Institute of Nuclear Physics by changing energy, dose and angle of incidence of the Ar + ion beam. To bring out the underlying modification depth-resolved x-ray grazing incidence diffraction has been carried out using synchrotron radiation facility, while the structure of the top surface was studied through atomic force microscopy

  18. Cryogenic surface ion traps

    International Nuclear Information System (INIS)

    Niedermayr, M.

    2015-01-01

    Microfabricated surface traps are a promising architecture to realize a scalable quantum computer based on trapped ions. In principle, hundreds or thousands of surface traps can be located on a single substrate in order to provide large arrays of interacting ions. To this end, trap designs and fabrication methods are required that provide scalable, stable and reproducible ion traps. This work presents a novel surface-trap design developed for cryogenic applications. Intrinsic silicon is used as the substrate material of the traps. The well-developed microfabrication and structuring methods of silicon are utilized to create simple and reproducible traps. The traps were tested and characterized in a cryogenic setup. Ions could be trapped and their life time and motional heating were investigated. Long ion lifetimes of several hours were observed and the measured heating rates were reproducibly low at around 1 phonon per second at a trap frequency of 1 MHz. (author) [de

  19. In vacuo growth studies of Ru thin films on Si, SiN, and SiO2 by high-sensitivity low energy ion scattering

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Sturm, Jacobus Marinus; Yakshin, Andrey; Bijkerk, Frederik

    2016-01-01

    In vacuo high-sensitivity low energy ion scattering (HS-LEIS) has been used to investigate the initial growth stages of DC sputtered Ru on top of Si, SiN, and SiO2. The high surface sensitivity of this technique allowed an accurate determination of surface coverages and thicknesses required for

  20. Reduction mechanisms of ethylene carbonate on si anodes of lithium-ion batteries: effects of degree of lithiation and nature of exposed surface.

    Science.gov (United States)

    Martinez de la Hoz, Julibeth M; Leung, Kevin; Balbuena, Perla B

    2013-12-26

    Ab initio molecular dynamics simulations are used to identify mechanisms of reduction of ethylene carbonate on Si surfaces at various degrees of lithiation, where the low-coordinated surface Si atoms are saturated with O, OH, or H functional groups. The lowest Si content surfaces are represented by quasi-amorphous LiSi4 and LiSi2; intermediate lithiation is given by LiSi crystalline facets, and the highest Li content is studied through Li13Si4 surfaces. It is found that ethylene carbonate (EC) reduction mechanisms depend significantly on the degree of lithiation of the surface. On LiSi surfaces EC is reduced according to two different two-electron mechanisms (one simultaneous and one sequential), which are independent of specific surface functionalization or nature of exposed facets. On the less lithiated surfaces, the simultaneous two-electron reduction is found more frequently. In that mechanism, the EC reduction is initiated by the formation of a C-Si bond that allows adsorption of the intact molecule to the surface and is followed by electron transfer and ring-opening. Strongly lithiated Li13Si4 surfaces are found to be highly reactive. Reduction of adsorbed EC molecules occurs via a four-electron mechanism yielding as reduction products CO(2-) and O(C2H4)O(2-). Direct transfer of two electrons to EC molecules in liquid phase is also possible, resulting in the presence of O(C2H4)OCO(2-) anions in the liquid phase.

  1. Si-nanoparticle synthesis using ion implantation and MeV ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Chulapakorn, T.; Wolff, M.; Primetzhofer, D.; Possnert, G. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J. [Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden); Hallen, A. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

    2015-12-15

    A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO{sub 2} matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO{sub 2} by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV {sup 127}I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Fundamental Investigation of Si Anode in Li-Ion Cells

    Science.gov (United States)

    Wu, James J.; Bennett, William R.

    2012-01-01

    Silicon is a promising and attractive anode material to replace graphite for high capacity lithium ion cells since its theoretical capacity is approximately 10 times of graphite and it is an abundant element on earth. However, there are challenges associated with using silicon as Li-ion anode due to the significant first cycle irreversible capacity loss and subsequent rapid capacity fade during cycling. In this paper, cyclic voltammetry and electrochemical impedance spectroscopy are used to build a fundamental understanding of silicon anodes. The results show that it is difficult to form the SEI film on the surface of Si anode during the first cycle, the lithium ion insertion and de-insertion kinetics for Si are sluggish, and the cell internal resistance changes with the state of lithiation after electrochemical cycling. These results are compared with those for extensively studied graphite anodes. The understanding gained from this study will help to design better Si anodes.

  3. The Effect of Ion Irradiation on Nanocrystallization and Surface Relief of a Ribbon from Fe72.5Cu1Nb2Mo1.5Si14B9 Alloy

    Science.gov (United States)

    Romanov, I. Yu.; Gushchina, N. V.; Ovchinnikov, V. V.; Makhinko, F. F.; Stepanov, A. V.; Medvedev, A. I.; Starodubtsev, Yu. N.; Belozerov, V. Ya.; Loginov, B. A.

    2018-02-01

    Using the methods of X-ray diffraction and atomic force microscopy, the process of crystallization of an amorphous Fe72.5Cu1Nb2Mo1.5Si14B9 alloy irradiated with accelerated Ar+ ions is investigated. It is found out that an irradiation by the Ar+ ions with the energy 30 keV at the ion current density 300 μA/cm2 (fluence 3.75·1015 cm-2, irradiation time 2 s, ion-beam short-duration heating up to 350°C, which is 150°C lower than the thermal crystallization threshold) results in a complete crystallization of this amorphous alloy (throughout the bulk of a 25 μm ribbon) followed by precipitation of solid solution crystals of α-Fe(Si), close in its composition to Fe80Si20, stable phase of Fe3Si, and metastable hexagonal phases. By the methods of atomic force and scanning tunneling microscopy it is shown that nanocrystallization caused by ion irradiation is accompanied by surface relief changes both on the irradiated and unirradiated sides of the Fe72.5Cu1Nb2Mo1.5Si14B9 alloy ribbon at the depth exceeding by a factor of 103 that of the physical ion penetration for this material. The data obtained, taking into account a significant temperature decrease and multiple acceleration of the crystallization process, serve an evidence of the radiation-dynamic influence of accelerated ions on the metastable amorphous medium.

  4. Reactions between monolayer Fe and Si(001) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Hasegawa, M.; Kobayashi, N.; Hayashi, N. [Electrotechnical Lab., Tsukuba, Ibaraki (Japan)

    1997-03-01

    Reactions between 1.5 monolayer(ML) Fe deposited on Si(001)-2x1 and -dihydride surfaces were studied in situ by reflection high-energy electron diffraction and time-of-flight ion scattering spectrometry with the use of 25 keV H ions. The reactions between Fe and Si which were successively deposited on Si(001)-dihydride surface were also studied. After the room temperature deposition Fe reacted with Si(001)-2x1 substrate resulting in the formation of polycrystalline Fe5Si3. By annealing to 560-650degC composite heteroepitaxial layer of both type A and type B {beta}-FeSi2 was formed. On the dihydride surface polycrystalline Fe was observed after 1.5ML Fe deposition at room temperature, and reaction between Fe and Si(001)-dihydride surface is not likely at room temperature. We observed 3D rough surface when we deposited only Fe layer on the dihydride surface and annealed above 700degC. The hydrogen termination of Si(001) surface prevents the deposited Fe from diffusing into the substrate below 500degC, however the annealing above 710degC leads to the diffusion. We obtained 2D ordered surface, which showed 3x3 RHEED pattern as referenced to the primitive unreconstructed Si(001) surface net, when we deposited 2.5ML Fe and 5.8ML Si successively onto Si(001)-dihydride surface and annealed to 470degC. (author)

  5. Effects of sintering additives on the microstructural and mechanical properties of the ion-irradiated SiCf/SiC

    Science.gov (United States)

    Fitriani, Pipit; Sharma, Amit Siddharth; Yoon, Dang-Hyok

    2018-05-01

    SiCf/SiC composites containing three different types of sintering additives viz. Sc-nitrate, Al2O3-Sc2O3, and Al2O3-Y2O3, were subjected to ion irradiation using 0.2 MeV H+ ions with a fluence of 3 × 1020 ions/m2 at room temperature. Although all composites showed volumetric swelling upon ion irradiation, SiCf/SiC with Sc-nitrate showed the smallest change followed by those with the Al2O3-Sc2O3 and Al2O3-Y2O3 additives. In particular, SiCf/SiC containing the conventional Al2O3-Y2O3 additive revealed significant microstructural changes, such as surface roughening and the formation of cracks and voids, resulting in reduced fiber pullout upon irradiation. On the other hand, the SiCf/SiC with Sc-nitrate showed the highest resistance against ion irradiation without showing any macroscopic changes in surface morphology and mechanical strength, indicating the importance of the sintering additive in NITE-based SiCf/SiC for nuclear structural applications.

  6. Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

    Energy Technology Data Exchange (ETDEWEB)

    Kuhudzai, R.J., E-mail: rj.kuhudzai@tuks.co.za [Physics Department, University of Pretoria, Pretoria (South Africa); Malherbe, J.B.; Berg, N.G. van der; Hlatshwayo, T.T.; Odutemowo, O.; Prinsloo, L.C. [Physics Department, University of Pretoria, Pretoria (South Africa); Buys, A.V. [Laboratory for Microscopy and Microanalysis, University of Pretoria (South Africa); Erasmus, R. [School of Physics, University of the Witwatersrand, Johannesburg (South Africa); Wendler, E. [Institut Für Festköperphysik, Friedrich-Schiller-Universität Jena, Jena (Germany)

    2015-12-15

    The recystallisation behaviour and thermal decomposition of the near surface amorphised region of 6H-SiC have been investigated by Raman spectroscopy. 360 keV ions of iodine and silver were implanted at room temperature into wafers of 6H-SiC resulting in the amorphisation of the near surface region. Vacuum annealing of the samples was performed at 1200 °C for 5 h and then sequentially from 1200 to 1600 °C in steps of 100 °C for 30 h at each annealing temperature. Raman spectroscopy was performed using two laser wavelength excitation regimes, the 514 nm laser (visible region) and the 244 nm laser (deep ultraviolet region, DUV). Measurements in the visible region for samples annealed at 1200 °C for 5 h showed that the characteristic 6H-SiC peaks, namely, the Transverse Optical (TO) and Longitudinal Optical (LO) are similar to the virgin samples, albeit with lower intensity due to some retained defects upon recystallisation of the SiC surface region. The similarities between the virgin spectra and the annealed sample were due to the deep penetration of the 514 nm laser into 6H-SiC resulting in the signal from the bulk undamaged 6H-SiC contributing to the overall spectra. However, DUV laser excitation, which only probes the near surface region, shows that after annealing the peaks are broader and asymmetrical compared to the virgin samples. DUV Raman spectra of samples annealed at 1600 °C indicate that SiC has completely decomposed and the top surface layer is now covered by a carbon layer. However the deeper penetrating laser in the visible region showed that the extent of decomposition at 1600 °C was greater for the silver implanted samples than for the iodine implanted samples.

  7. Amorphous zone evolution in Si during ion bombardment

    International Nuclear Information System (INIS)

    Kucheyev, S.O.

    1999-01-01

    Heavy ion induced damage in crystalline Si has been extensively studied for the last several decades. It has been experimentally ascertained that if the damage level in the collision (sub)cascade volume exceeds some threshold value, an amorphous zone in a crystalline matrix can be created. Such amorphous zones (a-zones) have been directly observed by transmission electron microscopy (TEM) for the low dose heavy ion bombardment of Si at relatively low temperatures (at room temperature and below). Such a-zones in a surrounding crystalline matrix are also expected to be formed during ion bombardment at elevated temperatures (T∼ 200-550 deg C), but their direct post-implantation observation is difficult because of dynamic annealing of displacement damage during implantation. Dynamic annealing can occur via both direct thermal and ion beam assisted processes. These processes are rather effective since the annealing temperatures for a-zones have been shown to be much lower than those required for crystallisation at a planar amorphous-crystalline (a/c) interface for thermal and ion beam induced crystallisation. This reduction of the annealing temperature has been successfully explained on the basis of the additional driving force available for crystallisation from the derivative of the surface free-energy density of a curved phase boundary. Although a lot of work has been undertaken to understand the formation and stabilisation of a-zones in Si, very little effort has been made to study their thermal and, especially, ion / electron beam induced evolution. In this report a-zone evolution in Si is considered based on a point defect diffusion model for ion beam induced Crystallisation and amorphization in Si modified to take into account purely thermal annealing and the additional interfacial driving force for crystallisation. In addition, the previously unconsidered problem of determination of the a-zone size distribution under different implant conditions is addressed

  8. Fe3Si surface coating on SiFe steel

    International Nuclear Information System (INIS)

    Schneeweiss, O.; Pizurova, N.; Jiraskova, Y.; Zak, T.; Cornut, B.

    2000-01-01

    Fe 3 Si layers were prepared using chemical vapor deposition of Si on the surface of Go steel and its subsequent heat treatment. The changes in the structure and phase composition after different heat treatment conditions have been analyzed. The coating is characterized by high hardness, good corrosion resistance, high electrical resistivity, and the spin texture which differs from the steel substrate

  9. On the structure of Si(100) surface

    DEFF Research Database (Denmark)

    Back, Seoin; Schmidt, Johan Albrecht; Ji, Hyunjun

    2013-01-01

    We revisit a dangling theoretical question of whether the surface reconstruction of the Si(100) surface would energetically favor the symmetric or buckled dimers on the intrinsic potential energy surfaces at 0 K. This seemingly simple question is still unanswered definitively since all existing...... of the electron-electron correlation as well as proper multireference wave functions when exploring the extremely delicate potential energy surfaces of the reconstructed Si(100) surface. (C) 2013 AIP Publishing LLC....

  10. High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part III: heavy-fluence Co bombardment induced surface topography development

    International Nuclear Information System (INIS)

    Zhang Yanwen; Winzell, Thomas; Zhang Tonghe; Maximov, Ivan A.; Sarwe, Eva-Lena; Graczyk, Mariusz; Montelius, Lars; Whitlow, Harry J.

    1999-01-01

    The surface topography development of Si(1 0 0), Si(1 1 1), oxide/Si and nitride/Si structures under high normal fluence (1x10 16 -2.6x10 18 ions cm -2 ) keV Co metal vapour vacuum arc (MEVVA) irradiation has been investigated by scanning electron microscopy (SEM). The results show that for normal fluences up to ∼10 17 ions cm -2 , the surface topography remains flat. As the fluence increases, pores develop and grow to form a columnar structure. At even higher fluences the columns are eroded to form an acicular structure. Deposition of a silicon dioxide or nitride layer on the Si surface leads to a significant suppression of the onset fluence for the formation of a rough surface. The porous surface could not be transformed to the network of acicular structures or a flat surface by high temperature annealing

  11. Reneutralization time of surface silicon ions on a field emitter

    International Nuclear Information System (INIS)

    Mazumder, B; Vella, A; Deconihout, B; Gilbert, M; Schmitz, G

    2010-01-01

    In this work, the lifetime of silicon (Si) ions generated through photoionization of Si surface atoms from a field emitter was measured. Under low-intensity fs laser pulse illumination, a linear dependence of the number of evaporated ions per pulse on the laser intensity was observed. A simple model was developed to explain this linear dependence and to estimate the rate of success of the field evaporation process. It is shown that the number of evaporated ions per pulse depends on the standing field applied to the Si surface, demonstrating the existence of an ionic energy barrier for Si ions. The lifetime of these ions was estimated to be 0.5 ps.

  12. Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C+-ion implantation process to improve photoluminescence intensity

    Science.gov (United States)

    Mizuno, Tomohisa; Omata, Yuhsuke; Kanazawa, Rikito; Iguchi, Yusuke; Nakada, Shinji; Aoki, Takashi; Sasaki, Tomokazu

    2018-04-01

    We experimentally studied the optimization of the hot-C+-ion implantation process for forming nano-SiC (silicon carbide) regions in a (100) Si-on-insulator substrate at various hot-C+-ion implantation temperatures and C+ ion doses to improve photoluminescence (PL) intensity for future Si-based photonic devices. We successfully optimized the process by hot-C+-ion implantation at a temperature of about 700 °C and a C+ ion dose of approximately 4 × 1016 cm-2 to realize a high intensity of PL emitted from an approximately 1.5-nm-thick C atom segregation layer near the surface-oxide/Si interface. Moreover, atom probe tomography showed that implanted C atoms cluster in the Si layer and near the oxide/Si interface; thus, the C content locally condenses even in the C atom segregation layer, which leads to SiC formation. Corrector-spherical aberration transmission electron microscopy also showed that both 4H-SiC and 3C-SiC nanoareas near both the surface-oxide/Si and buried-oxide/Si interfaces partially grow into the oxide layer, and the observed PL photons are mainly emitted from the surface SiC nano areas.

  13. Ion bombardment modification of surfaces

    International Nuclear Information System (INIS)

    Auciello, O.

    1984-01-01

    An historical overview of the main advances in the understanding of bombardment-induced surface topography is presented. The implantation and sputtering mechanisms which are relevant to ion bombardment modification of surfaces and consequent structural, electronic and compositional changes are described. Descriptions of plasma and ion-beam sputtering-induced film formation, primary ion-beam deposition, dual beam techniques, cluster of molecule ion-beam deposition, and modification of thin film properties by ion bombardment during deposition are presented. A detailed account is given of the analytical and computational modelling of topography from the viewpoint of first erosion theory. Finally, an account of the possible application and/or importance of textured surfaces in technologies and/or experimental techniques not considered in previous chapters is presented. refs.; figs.; tabs

  14. Systematic investigation of the reactive ion beam sputter deposition process of SiO2

    Science.gov (United States)

    Mateev, Maria; Lautenschläger, Thomas; Spemann, Daniel; Finzel, Annemarie; Gerlach, Jürgen W.; Frost, Frank; Bundesmann, Carsten

    2018-02-01

    Ion beam sputter deposition (IBSD) is an established physical vapour deposition technique that offers the opportunity to tailor the properties of film-forming particles and, consequently, film properties. This is because of two reasons: (i) ion generation and acceleration (ion source), sputtering (target) and film deposition (substrate) are locally separated. (ii) The angular and energy distribution of sputtered target atoms and scattered primary particles depend on ion incidence angle, ion energy, and ion species. Ion beam sputtering of a Si target in a reactive oxygen atmosphere was used to grow SiO2 films on silicon substrates. The sputtering geometry, ion energy and ion species were varied systematically and their influence on film properties was investigated. The SiO2 films are amorphous. The growth rate increases with increasing ion energy and ion incidence angle. Thickness, index of refraction, stoichiometry, mass density and surface roughness show a strong correlation with the sputtering geometry. A considerable amount of primary inert gas particles is found in the deposited films. The primary ion species also has an impact on the film properties, whereas the influence of the ion energy is rather small.

  15. Operation of low-energy ion implanters for Si, N, C ion implantation into silicon and glassy carbon

    International Nuclear Information System (INIS)

    Carder, D.A.; Markwitz, A.

    2009-01-01

    This report details the operation of the low-energy ion implanters at GNS Science for C, N and Si implantations. Two implanters are presented, from a description of the components through to instructions for operation. Historically the implanters have been identified with the labels 'industrial' and 'experimental'. However, the machines only differ significantly in the species of ions available for implantation and sample temperature during implantation. Both machines have been custom designed for research purposes, with a wide range of ion species available for ion implantation and the ability to implant two ions into the same sample at the same time from two different ion sources. A fast sample transfer capability and homogenous scanning profiles are featured in both cases. Samples up to 13 mm 2 can be implanted, with the ability to implant at temperatures down to liquid nitrogen temperatures. The implanters have been used to implant 28 Si + , 14 N + and 12 C + into silicon and glassy carbon substrates. Rutherford backscattering spectroscopy has been used to analyse the implanted material. From the data a Si 30 C 61 N 9 layer was measured extending from the surface to a depth of about 77 ± 2 nm for (100) silicon implanted with 12 C + and 14 N + at multiple energies. Silicon and nitrogen ion implantation into glassy carbon produced a Si (40.5 %), C (38 %), N (19.5 %) and O (2%) layer centred around a depth of 50 ± 2 nm from the surface. (author). 8 refs., 20 figs

  16. Surface microhardening by ion implantation

    International Nuclear Information System (INIS)

    Singh, Amarjit

    1986-01-01

    The paper discusses the process and the underlying mechanism of surface microhardening by implanting suitable energetic ions in materials like 4145 steel, 304 stainless steel, aluminium and its 2024-T351 alloy. It has been observed that boron and nitrogen implantation in materials like 4145 steel and 304 stainless steel can produce a significant increase in surface hardness. Moreover the increase can be further enhanced with suitable overlay coatings such as aluminium (Al), Titanium (Ti) and carbon (C). The surface hardening due to implantation is attributed to precipitation hardening or the formation of stable/metastable phase or both. The effect of lithium implantation in aluminium and its alloy on microhardness with increasing ion dose and ion beam energy is also discussed. (author)

  17. Surface engineering by ion implantation

    International Nuclear Information System (INIS)

    Nielsen, Bjarne Roger

    1995-01-01

    Awidespread commercial applica tion iof particle accelerators is for ion implantation. Accelerator beams are used for ion implantation into metals, alloying a thin surface layer with foreign atoms to concentrations impossible to achieve by thermal processes, making for dramatic improvements in hardness and in resistance to wear and corrosion. Traditional hardening processes require high temperatures causing deformation; ion implantation on the other hand is a ''cold process'', treating the finished product. The ionimplanted layer is integrated in the substrate, avoiding the risk of cracking and delamination from normal coating processes. Surface properties may be ''engineered'' independently of those of the bulk material; the process does not use environmentally hazardous materials such as chromium in the surface coating. The typical implantation dose required for the optimum surface properties of metals is around 2 x 10 17 ion/cm 2 , a hundred times the typical doses for semiconductor processing. When surface areas of more than a few square centimetres have to be treated, the implanter must therefore be able to produce high beam currents (5 to 10 mA) to obtain an acceptable treatment time. Ion species used include nitrogen, boron, carbon, titanium, chromium and tantalum, and beam energies range from 50 to 200 keV. Since most components are three dimensional, it must be possible to rotate and tilt them in the beam, and control beam position over a large area. Examples of industrial applications are: - surface treatment of prostheses (hip and knee joints) to reduce wear of the moving parts, using biocompatible materials; - ion implantation into high speed ball bearings to protect against the aqueous corrosion in jet engines (important for service helicopters on oil rigs); - hardening of metal forming and cutting tools; - reduction of corrosive wear of plastic moulding tools, which are expensive to produce

  18. Ion bombardment modification of surfaces

    International Nuclear Information System (INIS)

    Auciello, O.

    1984-01-01

    Ion bombardment-induced modification of surfaces may be considered one of the significant scientific and technological developments of the last two decades. The understanding acquired concerning the underlying mechanisms of several phenomena occurring during ion-surface interactions has led to applications within different modern technologies. These include microelectronics, surface acoustical and optical technologies, solar energy conversion, thin film technology, ion implantation metallurgy, nuclear track technology, thermonuclear fusion, vacuum technology, cold welding technology, biomedicine (implantology). It has become clear that information on many relevant advances, regarding ion bombardment modification of surfaces is dispersed among journals involving fields sometimes not clearly related. This may result, in some cases, in a loss of the type of interdisciplinary exchange of ideas, which has proved to be so fruitful for the advancement of science and technology. This book has been planned in an attempt to collect at least some of today's relevant information about the experimental and theoretical knowledge related to surface modification and its application to technology. (Auth.)

  19. Ohmic contact on n- and p-type ion-implanted 4H-SiC with low-temperature metallization process for SiC MOSFETs

    Science.gov (United States)

    Shimizu, Haruka; Shima, Akio; Shimamoto, Yasuhiro; Iwamuro, Noriyuki

    2017-04-01

    The ohmic contact on n- and p-type SiC regions with the same contact metal is a key process in regard to creating high-performance MOSFETs and insulated gate bipolar transistors (IGBTs). The dependence of the contact resistance on n- and p-type SiC regions on ion species, dose, and implantation temperature was investigated. The results of such an investigation revealed that the amorphization of the SiC surface and the generation of 3C-SiC produce a low contact resistance without the need for a high-temperature metallization process. The contact resistances of 2.1 × 10-6 Ω cm2 on the n-type SiC region and 1.3 × 10-3 Ω cm2 on the p-type SiC region were obtained with high-dose ion implantation at room temperature on the n-type SiC region, high-dose ion implantation at high temperature on the p-type SiC region, and a titanium-based contact electrode. A SiC MOSFET was fabricated with the low-temperature ohmic contact process. The positive-bias gate leakage current markedly increased. It can be deduced that high-dose ion implantation at room temperature on the n-type SiC region degrades surface roughness on the N+ source region.

  20. Auger processes in ion-surface collisions

    International Nuclear Information System (INIS)

    Zampieri, Guillermo.

    1985-01-01

    Bombardment of solid targets with low-energy noble gas ions can produce Auger electron emission from the target atoms and/or from the projectiles. In the case of Auger emission from the projectile, Auger emission was observed during the bombardment of Na, Mg, Al and Si with Ne + ions. This emission was studied as a function of the energy, incidence angle and charge state of the projectile. From the analysis, it is concluded that the emission originates in the decay in vacuum of excited and reflected Ne atoms, moving outside the surface. Auger emission was not observed during the bombardment of K, V and Ni with Ar + ions; Zr and Cs with Kr + , and Xe + ions, respectively; and Li and Be with He + ions. In the case of Auger emission from the target, studies of certain aspects of the Na, Mg and Al Auger electron emission spectra were made. The results allow to identify two components in the Auger feature, coresponding to two kinds of Auger transition. The total spectra results from the superposition of both kinds of emission. Auger spectra from K obtained during Ar + and K + bombardment of K-implanted Be, Mg, Al and Cu were also analyzed. Similar to the Na, Mg and Al Auger spectra, the K Auger feature is composed of an atomic like peak superimposed on a bandlike structure. Both components correspond to Auger transitions in K atoms with a 3p vacancy, occuring in vacuum and inside the solid, respectively. (M.E.L.) [es

  1. Si nanoparticle-decorated Si nanowire networks for Li-ion battery anodes

    KAUST Repository

    Hu, Liangbing

    2011-01-01

    We designed and fabricated binder-free, 3D porous silicon nanostructures for Li-ion battery anodes, where Si nanoparticles electrically contact current collectors via vertically grown silicon nanowires. When compared with a Si nanowire anode, the areal capacity was increased by a factor of 4 without having to use long, high temperature steps under vacuum that vapour-liquid-solid Si nanowire growth entails. © 2011 The Royal Society of Chemistry.

  2. Positron annihilation study on defects in ion-implanted Si

    International Nuclear Information System (INIS)

    Akahane, T.; Fujinami, M.; Sawada, T.

    2003-01-01

    Two-detector coincidence measurements of the Doppler broadened annihilation spectra with a variable energy positron beam are carried out for the study of the annealing behavior of Si implanted with As, P, Cu and H ions. In P-implanted Si, growth of the defect complexes are observed in coincidence Doppler broadening spectra up to 400degC. In Cu-implanted Si, the formation of defect-Cu complexes is indicated. In H-implanted Si, the passivation effect of hydrogen on positron traps are observed in the low temperature region up to 400degC. (author)

  3. Ions ejected from the surface: sputtering induced by swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Alzaher, I.

    2011-01-01

    Ion irradiation of solids leads to a deposition of its energy along the ion path. The energy deposited creates damage in the target as well as leads to the sputtering of neutral and charged particles. In this work we studied the damage induced by slow and swift ions in matter. We studied also the sputtering of secondary ions induced by swift heavy ion irradiation. We have measured the damage cross section of the surface of the Titanium (Insulator surface) and of the graphite (Conductor surface) by slow highly charged ions. The potential energy stored in the projectile has an important role for creating damage at surfaces. We studied the damage creation at the surface of crystalline silicon by swift heavy ions. We revealed that the c-Si is not sensitive to the irradiation by Xe ion at E c = 0,9 MeV/u, where the electronic stopping power is 12 keV/nm. The maximum efficiency to create a track is 0,3 %. Under swift heavy ion irradiation, the emission of the CaF + compared to the Ca + is higher for solid crystals than for thin films of Calcium Fluoride CaF 2 on Si. (author)

  4. Electrical conduction of Si/indium tin oxide/Si junctions fabricated by surface activated bonding

    Science.gov (United States)

    Liang, Jianbo; Ogawa, Tomoki; Hara, Tomoya; Araki, Kenji; Kamioka, Takefumi; Shigekawa, Naoteru

    2018-02-01

    The electrical properties of n+-Si//indium tin oxide (ITO)/n+-Si, n+-Si//ITO/p+-Si, and p+-Si//ITO/n+-Si junctions fabricated by surface activated bonding (SAB) were investigated. The current-voltage (I-V) characteristics of n+-Si//ITO/n+-Si, n+-Si//ITO/p+-Si, and p+-Si//ITO/n+-Si junctions showed excellent linear properties. The interface resistances of n+-Si//ITO/n+-Si, n+-Si//ITO/p+-Si, and p+-Si//ITO/n+-Si junctions were found to be 0.030, 0.025, and 0.029 Ω·cm2, respectively, which are lower than required for concentrator photovoltaics. The interface resistances of all the junctions increased with increasing annealing temperature. The degradation of the interface resistance is lower in n+-Si//ITO/n+-Si junctions than in n+-Si//ITO/p+-Si and p+-Si//ITO/n+-Si junctions, when the annealing temperature is higher than 100 °C. These results demonstrate that the ITO thin film as an intermediate layer has high potential application for the connection of subcells in the fabrication of tandem solar cells.

  5. Damage nucleation in Si during ion irradiation

    International Nuclear Information System (INIS)

    Holland, O.W.; Fathy, D.; Narayan, J.

    1984-01-01

    Damage nucleation in single crystals of silicon during ion irradiation is investigated. Experimental results and mechanisms for damage nucleation during both room and liquid nitrogen temperature irradiation with different mass ions are discussed. It is shown that the accumulation of damage during room temperature irradiation depends on the rate of implantation. These dose rate effects are found to decrease in magnitude as the mass of the ions is increased. The significance of dose rate effects and their mass dependence on nucleation mechanisms is discussed

  6. Spherical nanostructured Si/C composite prepared by spray drying technique for lithium ion batteries anode

    Energy Technology Data Exchange (ETDEWEB)

    Chen Libao [Energy Science and Technology Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of Chinese Academy of Sciences, Beijing 100049 (China); Xie Xiaohua [Energy Science and Technology Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of Chinese Academy of Sciences, Beijing 100049 (China); Wang Baofeng [Department of Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Wang Ke [Energy Science and Technology Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Xie Jingying [Energy Science and Technology Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China) and Graduate School of Chinese Academy of Sciences, Beijing 100049 (China)]. E-mail: jyxie@mail.sim.ac.cn

    2006-07-15

    Spherical nanostructured Si/C composite was prepared by spray drying technique, followed by heat treatment, in which nanosized silicon and fine graphite particles were homogeneously embedded in carbon matrix pyrolyzed by phenol formaldehyde resin. Cyclic voltammetry tests showed two pairs of redox peaks corresponding to lithiation and delithiation of Si/C composite. The Si/C composite exhibited a reversible capacity of 635 mAh g{sup -1} and good cycle performance used in lithium ion batteries. To improve cycle performance of this Si/C composite further, the carbon-coated Si/C composite was synthesized by the second spray drying and heat treatment processing. The cycle performance of carbon-coated Si/C composite was improved significantly, which was attributed to the formation of stable SEI passivation layers on the outer surface of carbon shell which protected the bared silicon from exposing to electrolyte directly.

  7. SiO adsorption on a p(2 × 2) reconstructed Si(1 0 0) surface

    NARCIS (Netherlands)

    Violanda, M.|info:eu-repo/dai/nl/304840262; Rudolph, H.|info:eu-repo/dai/nl/304830496

    2009-01-01

    We have investigated the adsorption mechanism of SiO molecule incident on a clean Si(1 0 0) p(2 × 2) reconstructed surface using density functional theory based methods. Stable adsorption geometries of SiO on Si surface, as well as their corresponding activation and adsorption energies are

  8. Modelling of ion implantation in SiC crystals

    Energy Technology Data Exchange (ETDEWEB)

    Chakarov, Ivan [SILVACO International, 4701 Patrick Henry Drive, Building 2, Santa Clara, CA 95054 (United States)]. E-mail: ivan.chakarov@silvaco.com; Temkin, Misha [SILVACO International, 4701 Patrick Henry Drive, Building 2, Santa Clara, CA 95054 (United States)

    2006-01-15

    An advanced electronic stopping model for ion implantation in SiC has been implemented within the binary collision approximation. The model has been thoroughly tested and validated for Al implantation into 4H-, 6H-SiC under different initial implant conditions. A very good agreement between calculated and experimental profiles has been achieved. The model has been integrated in an industrial technology CAD process simulator.

  9. Modelling of ion implantation in SiC crystals

    International Nuclear Information System (INIS)

    Chakarov, Ivan; Temkin, Misha

    2006-01-01

    An advanced electronic stopping model for ion implantation in SiC has been implemented within the binary collision approximation. The model has been thoroughly tested and validated for Al implantation into 4H-, 6H-SiC under different initial implant conditions. A very good agreement between calculated and experimental profiles has been achieved. The model has been integrated in an industrial technology CAD process simulator

  10. Fabrication of high-quality strain relaxed SiGe(1 1 0) films by controlling defects via ion implantation

    Science.gov (United States)

    Kato, M.; Arimoto, K.; Yamanaka, J.; Nakagawa, K.; Sawano, K.

    2017-11-01

    We investigate effects of ion implantation on strain relaxation of SiGe(1 1 0) layers grown on Si(1 1 0) substrates. Ar+ or Si+ ion implantation is carried out before or after the SiGe growth. It is found that the strain relaxation of the SiGe(1 1 0) film is largely enhanced due to implantation-induced defects both for Ar and Si implantation. Particularly, the sample with Si implantation after the SiGe growth allows large strain relaxation and smaller surface roughness than Ar implantation. As a result, a 50-nm-thick Si0.79Ge0.21 or Si0.77Ge0.23(1 1 0) buffer layer with almost full relaxation and rms surface roughness below 0.5 nm was obtained. It is, therefore, expected that high-mobility strained Si/Ge(1 1 0) channels can be realized on the SiGe(1 1 0) relaxed buffer layers fabricated by Si implantation. It is also demonstrated that the local introduction of the implantation defects allows controlling of lateral strain states and dislocation generation, opening new concepts of engineering of both strain and surface orientation.

  11. Decrease of Staphylococcal adhesion on surgical stainless steel after Si ion implantation

    International Nuclear Information System (INIS)

    Braceras, Iñigo; Pacha-Olivenza, Miguel A.; Calzado-Martín, Alicia; Multigner, Marta; Vera, Carolina; Broncano, Luis Labajos-; Gallardo-Moreno, Amparo M.; González-Carrasco, José Luis; Vilaboa, Nuria

    2014-01-01

    Highlights: • Si ion implantation of AISI 316LVM medical grade alloy might reduce bacterial adhesion and colonization. • Si ion implantation does not impair the attachment, viability and matrix maturation of human mesenchymal stem cells. • Nano-topography and surface chemistry changes account for the Si ion implantation induced effects. - Abstract: 316LVM austenitic stainless steel is often the material of choice on temporal musculoskeletal implants and surgical tools as it combines good mechanical properties and acceptable corrosion resistance to the physiologic media, being additionally relatively inexpensive. This study has aimed at improving the resistance to bacterial colonization of this surgical stainless steel, without compromising its biocompatibility and resistance. To achieve this aim, the effect of Si ion implantation on 316LVM has been studied. First, the effect of the ion implantation parameters (50 keV; fluence: 2.5–5 × 10 16 ions/cm 2 ; angle of incidence: 45–90°) has been assessed in terms of depth profiling of chemical composition by XPS and nano-topography evaluation by AFM. The in vitro biocompatibility of the alloy has been evaluated with human mesenchymal stem cells. Finally, bacterial adhesion of Staphylococcus epidermidis and Staphylococcus aureus on these surfaces has been assessed. Reduction of bacterial adhesion on Si implanted 316LVM is dependent on the implantation conditions as well as the features of the bacterial strains, offering a promising implantable biomaterial in terms of biocompatibility, mechanical properties and resistance to bacterial colonization. The effects of surface composition and nano-topography on bacterial adhesion, directly related to ion implantation conditions, are also discussed

  12. Decrease of Staphylococcal adhesion on surgical stainless steel after Si ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Braceras, Iñigo, E-mail: inigo.braceras@tecnalia.com [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Pacha-Olivenza, Miguel A. [CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Universidad de Extremadura, Departamento de Física Aplicada, Facultad de Ciencias, Av. Elvas s/n, 06006 Badajoz (Spain); Calzado-Martín, Alicia [Hospital Universitario La Paz-IdiPAZ, Paseo de la Castellana 261, 28046 Madrid (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Multigner, Marta [Centro Nacional de Investigaciones Metalúrgicas, CENIM-CSIC, Avda Gregorio del Amo 8, 28040 Madrid (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Vera, Carolina [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Broncano, Luis Labajos-; Gallardo-Moreno, Amparo M. [Universidad de Extremadura, Departamento de Física Aplicada, Facultad de Ciencias, Av. Elvas s/n, 06006 Badajoz (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); González-Carrasco, José Luis [Centro Nacional de Investigaciones Metalúrgicas, CENIM-CSIC, Avda Gregorio del Amo 8, 28040 Madrid (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); Vilaboa, Nuria [Hospital Universitario La Paz-IdiPAZ, Paseo de la Castellana 261, 28046 Madrid (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (CIBER-BBN) (Spain); and others

    2014-08-15

    Highlights: • Si ion implantation of AISI 316LVM medical grade alloy might reduce bacterial adhesion and colonization. • Si ion implantation does not impair the attachment, viability and matrix maturation of human mesenchymal stem cells. • Nano-topography and surface chemistry changes account for the Si ion implantation induced effects. - Abstract: 316LVM austenitic stainless steel is often the material of choice on temporal musculoskeletal implants and surgical tools as it combines good mechanical properties and acceptable corrosion resistance to the physiologic media, being additionally relatively inexpensive. This study has aimed at improving the resistance to bacterial colonization of this surgical stainless steel, without compromising its biocompatibility and resistance. To achieve this aim, the effect of Si ion implantation on 316LVM has been studied. First, the effect of the ion implantation parameters (50 keV; fluence: 2.5–5 × 10{sup 16} ions/cm{sup 2}; angle of incidence: 45–90°) has been assessed in terms of depth profiling of chemical composition by XPS and nano-topography evaluation by AFM. The in vitro biocompatibility of the alloy has been evaluated with human mesenchymal stem cells. Finally, bacterial adhesion of Staphylococcus epidermidis and Staphylococcus aureus on these surfaces has been assessed. Reduction of bacterial adhesion on Si implanted 316LVM is dependent on the implantation conditions as well as the features of the bacterial strains, offering a promising implantable biomaterial in terms of biocompatibility, mechanical properties and resistance to bacterial colonization. The effects of surface composition and nano-topography on bacterial adhesion, directly related to ion implantation conditions, are also discussed.

  13. Ion beam synthesis of IrSi3 by implantation of 2 MeV Ir ions

    International Nuclear Information System (INIS)

    Sjoreen, T.P.; Chisholm, M.F.; Hinneberg, H.J.

    1992-11-01

    Formation of a buried IrSi 3 layer in (111) oriented Si by ion implantation and annealing has been studied at an implantation energy of 2 MeV for substrate temperatures of 450--550C. Rutherford backscattering (RBS), ion channeling and cross-sectional transmission electron microscopy showed that a buried epitaxial IrSi 3 layer is produced at 550C by implanting ≥ 3.4 x 10 17 Ir/cm 2 and subsequently annealing for 1 h at 1000C plus 5 h at 1100C. At a dose of 3.4 x 10 17 Ir/cm 2 , the thickness of the layer varied between 120 and 190 nm and many large IrSi 3 precipitates were present above and below the film. Increasing the dose to 4.4 x 10 17 Ir/cm 2 improved the layer uniformity at the expense of increased lattice damage in the overlying Si. RBS analysis of layer formation as a function of substrate temperature revealed the competition between the mechanisms for optimizing surface crystallinity vs. IrSi 3 layer formation. Little apparent substrate temperature dependence was evident in the as-implanted state but after annealing the crystallinity of the top Si layer was observed to deteriorate with increasing substrate temperature while the precipitate coarsening and coalescence improved

  14. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)

    OpenAIRE

    Abe Shunsuke; Handa Hiroyuki; Takahashi Ryota; Imaizumi Kei; Fukidome Hirokazu; Suemitsu Maki

    2010-01-01

    Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD) and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111)/Si(111) is Si-terminated before the graphitization, and ...

  15. Radiative decay rates in Si crystallites with a donor ion

    Science.gov (United States)

    Derbenyova, Natalia V.; Burdov, Vladimir A.

    2018-04-01

    Within the framework of the time-dependent density functional theory, the radiative recombination rates have been calculated for small, ˜1 nm in diameter, hydrogen-passivated silicon crystallites with a single lithium or phosphorus ion. Sharp increase of the radiative recombination rates with increasing temperature was revealed for the crystallites with the lithium ion. No temperature effect was found for the crystallites with the ion of P. It was also shown that the presence of ionized donors in Si crystallites can substantially accelerate the radiative decay compared to the case of pure crystallites.

  16. Bond length contraction in Au nanocrystals formed by ion implantation into thin SiO2

    International Nuclear Information System (INIS)

    Kluth, P.; Johannessen, B.; Giraud, V.; Cheung, A.; Glover, C.J.; Azevedo, G. de M; Foran, G.J.; Ridgway, M.C.

    2004-01-01

    Au nanocrystals (NCs) fabricated by ion implantation into thin SiO 2 and annealing were investigated by means of extended x-ray absorption fine structure (EXAFS) spectroscopy and transmission electron microscopy. A bond length contraction was observed and can be explained by surface tension effects in a simple liquid-drop model. Such results are consistent with previous reports on nonembedded NCs implying a negligible influence of the SiO 2 matrix. Cumulant analysis of the EXAFS data suggests surface reconstruction or relaxation involving a further shortened bond length. A deviation from the octahedral closed shell structure is apparent for NCs of size 25 A

  17. Synthesis of optical waveguides in SiO2 by silver ion implantation

    Science.gov (United States)

    Márquez, H.; Salazar, D.; Rangel-Rojo, R.; Angel-Valenzuela, J. L.; Vázquez, G. V.; Flores-Romero, E.; Rodríguez-Fernández, L.; Oliver, A.

    2013-03-01

    Optical waveguides have been obtained by silver ion implantation on fused silica substrates. Silver ion implantation profiles were calculated in a SiO2 matrix with different energies of implantation from 125 keV to 10 MeV. Refractive index change (Δn) of the ion implanted waveguides was calculated as a function of their chemical composition. Optical absorption spectra of waveguides obtained by 9 MeV silver ion implantation, at a dose of 5 × 1016 ions/cm2, exhibit the typical absorption band associated to the surface plasmon resonance of silver nanoparticles. Effective refractive indices of the propagation modes and waveguide propagation losses of silver ion implanted waveguides are also presented.

  18. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    Energy Technology Data Exchange (ETDEWEB)

    Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Heidary, K. [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Johnson, R.B.; Colon, T. [Department of Physics, Alabama A and M University, Huntsville, AL (United States); Muntele, C. [Cygnus Scientific Services, Huntsville, AL (United States); Ila, D. [Department of Physics, Fayetteville St. University, Fayetteville, NC (United States)

    2014-08-15

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S{sup 2}σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  19. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    Science.gov (United States)

    Budak, S.; Heidary, K.; Johnson, R. B.; Colon, T.; Muntele, C.; Ila, D.

    2014-08-01

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S2σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  20. Formation of SiC using low energy CO2 ion implantation in silicon

    International Nuclear Information System (INIS)

    Sari, A.H.; Ghorbani, S.; Dorranian, D.; Azadfar, P.; Hojabri, A.R.; Ghoranneviss, M.

    2008-01-01

    Carbon dioxide ions with 29 keV energy were implanted into (4 0 0) high-purity p-type silicon wafers at nearly room temperature and doses in the range between 1 x 10 16 and 3 x 10 18 ions/cm 2 . X-ray diffraction analysis (XRD) was used to characterize the formation of SiC in implanted Si substrate. The formation of SiC and its crystalline structure obtained from above mentioned technique. Topographical changes induced on silicon surface, grains and evaluation of them at different doses observed by atomic force microscopy (AFM). Infrared reflectance (IR) and Raman scattering measurements were used to reconfirm the formation of SiC in implanted Si substrate. The electrical properties of implanted samples measured by four point probe technique. The results show that implantation of carbon dioxide ions directly leads to formation of 15R-SiC. By increasing the implantation dose a significant changes were also observed on roughness and sheet resistivity properties.

  1. High-energy ion-beam-induced phase separation in SiOx films

    International Nuclear Information System (INIS)

    Arnoldbik, W.M.; Tomozeiu, N.; Hattum, E.D. van; Lof, R.W.; Vredenberg, A.M.; Habraken, F.H.P.M.

    2005-01-01

    The modification of the nanostructure of silicon suboxide (SiO x ) films as a result of high-energy heavy-ion irradiation has been studied for the entire range 0.1≤x x films have been obtained by radio-frequency magnetron sputter deposition. For 50 MeV 63 Cu 8+ ions and an angle of incidence of 20 deg. with the plane of the surface, and for x≥0.5, it takes a fluence of about 10 14 /cm 2 to reach a Si-O-Si infrared absorption spectrum, which is supposed to be characteristic for a Si-SiO 2 composite film structure. For smaller x values, it takes a much larger fluence. The interpretation of the IR spectra is corroborated for the surface region by results from x-ray photoelectron spectroscopy. The results present evidence for a mechanism, in which the phase separation takes place in the thermal spike, initiated by the energy deposited in many overlapping independent ion tracks. Such a process is possible since the suboxides fulfill the conditions for spinodal decomposition

  2. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111/Si(111

    Directory of Open Access Journals (Sweden)

    Abe Shunsuke

    2010-01-01

    Full Text Available Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111 thin films on Si(111 has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111/Si(111 is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001 proceeds.

  3. Fermi surfaces of YRu2Si2 and LaRu2Si2

    International Nuclear Information System (INIS)

    Settai, R.; Ikezawa, H.; Toshima, H.; Takashita, M.; Ebihara, T.; Sugawara, H.; Kimura, T.; Motoki, K.; Onuki, Y.

    1995-01-01

    We have measured the de Haas-van Alphen effect of YRu 2 Si 2 and LaRu 2 Si 2 to clarify the Fermi surfaces and cyclotron masses. Main hole-Fermi surfaces of both compounds with a distorted ellipsoid shape are similar, occupying about half of the Brillouin zone. The small hole-Fermi surfaces with the shape of a rugby ball are three in number for LaRu 2 Si 2 , and one for YRu 2 Si 2 . An electron-Fermi surface consists of a doughnut like shape for LaRu 2 Si 2 , while a cylinder along the [001] direction and a multiply-connected shape exist for YRu 2 Si 2 . The cyclotron masses of YRu 2 Si 2 are a little larger than those of LaRu 2 Si 2 . ((orig.))

  4. Surface morphology evolution of amorphous Fe-Si layers upon thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Sun, C M; Tsang, H K; Wong, S P; Ke, N [Department of Electronic Engineering, Chinese University of Hong Kong, Shatin, NT, Hong Kong (China); Hark, S K [Department of Physics, Chinese University of Hong Kong, Shatin, NT, Hong Kong (China)], E-mail: cmsun@ee.cuhk.edu.hk

    2008-04-21

    Changes in the surface morphology of ion-beam-synthesized amorphous Fe-Si layers after rapid thermal annealing (RTA) and furnace annealing (FA) were investigated using atomic force microscopy and transmission electron microscopy. Completely amorphous Fe-Si layers were formed by Fe implantation at a dosage of 5 x 10{sup 15} cm{sup -2} using a metal vapour vacuum arc ion source under 80 kV extraction voltage and cryogenic temperature. After RTA at 850 deg. C, {beta}-FeSi{sub 2} precipitates in Si are completely aggregated from this amorphous Fe-Si layer and the surface of the implanted layer remains flat. To date, no obvious photoluminescence (PL) spectrum has been reported from RTA treated {beta}-FeSi{sub 2} precipitates. However, after annealing at 850 deg. C for 40 s, high-quality {beta}-FeSi{sub 2} precipitates in Si are obtained which clearly show 1.5 {mu}m PL at 80 K for the first time. Even though additional long-term FA at 850 deg. C can enhance PL intensity to a limited extent, the longer thermal treatment induces the outdiffusion of {beta}-FeSi{sub 2} precipitates and degrades the surface flatness.

  5. Surface engineering with ion beams: from self-organized nanostructures to ultra-smooth surfaces

    International Nuclear Information System (INIS)

    Frost, F.; Ziberi, B.; Schindler, A.; Rauschenbach, B.

    2008-01-01

    Low-energy ion-beam sputtering, i.e. the removal of atoms from a surface due to the impact of energetic ions or atoms, is an inherent part of numerous surface processing techniques. Besides the actual removal of material, this surface erosion process often results in a pronounced alteration of the surface topography. Under certain conditions, sputtering results in the formation of well-ordered patterns. This self-organized pattern formation is related to a surface instability between curvature-dependent sputtering that roughens the surface and smoothing by different surface relaxation mechanisms. If the evolution of surface topography is dominated by relaxation mechanisms, surface smoothing can occur. In this presentation the current status of self-organized pattern formation and surface smoothing by low-energy ion-beam erosion of Si and Ge is summarized. In detail it will be shown that a multitude of patterns as well as ultra-smooth surfaces can develop, particularly on Si surfaces. Additionally, the most important experimental parameters that control these processes are discussed. Finally, examples are given for the application of low-energy ion beams as a novel approach for passive optical device engineering for many advanced optical applications. (orig.)

  6. Behavior of PET implanted by Ti, Ag, Si and C ion using MEVVA implantation

    International Nuclear Information System (INIS)

    Wu Yuguang; Zhang Tonghe; Zhang Yanwen; Zhang Huixing; Zhang Xiaoji; Zhou Gu

    2001-01-01

    Polyethylene terephthalane (PET) has been modified with Ti, Ag, Si and C ions from a metal vapor arc source (MEVVA). Ti, Ag, Si and C ions were implanted with acceleration voltage 40 kV to fluences ranging from 1x10 16 to 2x10 17 cm -2 . The surface of implanted PET darkened with increasing ion dose, when the metal ion dose was greater than 1x10 17 cm -2 the color changed to metallic bright. The surface resistance decreases by 5-6 orders of magnitude with increasing dose. The resistivity is stable after long-term storage. The depth of Ti- and Ag-implanted layer is approximately 150 and 80 nm measured by Rutherford backscattering (RBS), respectively. TEM photos revealed the presence of Ti and Ag nano-meter particles on the surface resulting from the high-dose implantation. Ti and Ag ion implantations improved conductivity and wear resistance significantly. The phase and structural changes were obtained by X-ray diffraction (XRD). It can be seen that nano-meter particles of Ti precipitation, TiO 2 and Ti-carbides have been formed in implanted layer. Nano-hardness of implanted PET has been measured by a nano-indenter. The results show that the surface hardness, modulus and wear resistance could be increased

  7. SiO2 on silicon: behavior under heavy ion irradiation

    International Nuclear Information System (INIS)

    Rotaru, C.

    2004-03-01

    Heavy ion irradiation was performed on a-SiO 2 layers deposited on Si. Damage of the surface was studied by means of Atomic Force Microscopy. Hillocks appear for an electronic stopping power higher than 16 keV/nm. The height of the hillocks decreases with the thickness of the oxide layer. Infrared Spectroscopy studies show that the damage threshold for a-SiO 2 is at an electronic stopping power of 2 keV/nm. Therefore it is probable that the origin of the hillocks comes from the silicon layer. This could be explain within the frame of thermal spike model. The theoretical thresholds are 8 keV/nm and 1.8 keV/nm for silicon and a-SiO 2 respectively. Chemical etching after irradiation gives a technical possibility to create nano-pits, whose size and shape can be controlled. Additionally, these structures allowed to determine the AFM tip radius. (author)

  8. Fourier transform microwave spectroscopy of the SiCl+ ion

    Science.gov (United States)

    Tanaka, Keiichi; Harada, Kensuke; Cabezas, Carlos; Endo, Yasuki

    2018-03-01

    Fourier transform microwave spectra for the J = 1 ← 0 and 2 ← 1 rotational transitions of the SiCl+ ion were observed for two isotopologues (35 Cl and 37 Cl) in the ground and the first excited vibrational states of the ground 1Σ+ electronic state. Thanks to the high resolution of the FTMW spectrometer, hyperfine structures due to the quadrupole moment of the chlorine nucleus and the nuclear spin-rotation interaction were fully resolved. The observed FTMW spectra were combined with previously reported MMW and diode laser spectra in an analysis to determine the mass-independent Dunham coefficients Uk,l as well as a mass scaling parameter Δ01Cl = - 0.856 (30) . The equilibrium bond length of SiCl+ determined is re = 1.9439729 (10) Å and the nuclear quadrupole coupling constant of Si35 Cl+ is eQqe = - 11.8788 (23) MHz.

  9. Mixing of Cr and Si atoms induced by noble gas ions irradiation of Cr/Si bilayers

    Energy Technology Data Exchange (ETDEWEB)

    Tobbeche, S., E-mail: said_tobbeche@yahoo.com [Faculte des Sciences, Universite El-Hadj Lakhdar, Batna 05000 (Algeria); Boukhari, A. [Faculte des Sciences, Universite El-Hadj Lakhdar, Batna 05000 (Algeria); Khalfaoui, R. [Faculte des Sciences, Universite M. Bougara, Boumerdes 35000 (Algeria); Amokrane, A. [Faculte de Physique, USTHB, B.P. 32 El-Alia, Bab-Ezzouar 16111 (Algeria); Ecole Nationale Preparatoire aux Etudes d' Ingeniorat, Route Nationale, Rouiba (Algeria); Benazzouz, C.; Guittoum, A. [Centre de Recherche Nucleaire d' Alger, 02, Boulevard Frantz Fanon, B.P. 399 Alger-Gare (Algeria)

    2011-12-15

    Cr/Si bilayers were irradiated at room temperature with 120 keV Ar, 140 keV Kr and 350 keV Xe ions to fluences ranging from 10{sup 15} to 2 Multiplication-Sign 10{sup 16} ions/cm{sup 2}. The thickness of Cr layer evaporated on Si substrate was about 400 A. Rutherford backscattering spectrometry (RBS) was used to investigate the atomic mixing induced at the Cr-Si interface as function of the incident ion mass and fluence. We observed that for the samples irradiated with Ar ions, RBS yields from both Cr layer and Si substrate are the same as before the irradiation. There is no mixing of Cr and Si atoms, even at the fluence of 2 Multiplication-Sign 10{sup 16} ions/cm{sup 2}. For the samples irradiated with Kr ions, a slight broadening of the Cr and Si interfacial edges was produced from the fluence of 5 Multiplication-Sign 10{sup 15} ions/cm{sup 2}. The broadening of the Cr and Si interfacial edges is more pronounced with Xe ions particularly to the fluence of 10{sup 16} ions/cm{sup 2}. The interface broadening was found to depend linearly on the ion fluence and suggests that the mixing is like a diffusion controlled process. The experimental mixing rates were determined and compared with values predicted by ballistic and thermal spike models. Our experimental data were well reproduced by the thermal spikes model.

  10. 3C-SiC nanocrystal growth on 10° miscut Si(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Deokar, Geetanjali, E-mail: gitudeo@gmail.com [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); D' Angelo, Marie; Demaille, Dominique [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Cavellin, Catherine Deville [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil F-94010 (France)

    2014-04-01

    The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO{sub 2} thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO{sub 2} atmosphere. The influence of the atomic steps at the vicinal SiO{sub 2}/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO{sub 2} pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth. - Highlights: • Synthesis of 3C-SiC nanocrystals epitaxied on miscut-Si using a simple technique • Evidence of domain matching epitaxy at the SiC/Si interface • SiC growth proceeds along the (001) plane of host Si. • Substantial enhancement of the SiC nanocrystal density due to the miscut • Effect of the process parameters (CO{sub 2} pressure and annealing duration)

  11. Scattering of ion beams from surfaces

    International Nuclear Information System (INIS)

    Heiland, W.; Taglauer, E.

    1978-01-01

    A review is presented of the scattering of ion beams from surfaces and the physical phenomena which are probably most important for the formation of the final state (charge and excitation) of the secondary particles. The subject is treated under the headings: ion scattering, desorption by ion impact, and neutralization. (U.K.)

  12. Radiation Damage in Si Diodes from Short, Intense Ion Pulses

    Science.gov (United States)

    de Leon, S. J.; Ludewigt, B. A.; Persaud, A.; Seidl, P. A.; Schenkel, T.

    2017-10-01

    The Neutralized Drift Compression Experiment (NDCX-II) at Berkeley Lab is an induction accelerator studying the effects that concentrated ion beams have on various materials. Charged particle radiation damage was the focus of this research - we have characterized a series of Si diodes using an electrometer and calibrated the diodes response using an 241Am alpha source, both before and after exposing the diodes to 1 MeV He ions in the accelerator. The key part here is that the high intensity pulses from NDCX-II (>1010 ions/cm2 per pulse in accelerators, fusion energy experiments and space applications and results from short pulses can inform models of radiation damage evolution. This work was supported by the Office of Science of the US Department of Energy under contract DE-AC0205CH11231.

  13. Surface energy absorbing layers produced by ion implantation

    International Nuclear Information System (INIS)

    Gurarie, V.N.

    1997-01-01

    Single crystals of magnesia have been ion implanted with 80 keV Si and Cr ions at variable doses and then subjected to testing in a shock plasma. The peak surface temperature has been calibrated by measuring the size and temperature deformation of the fragments formed by multiple microcracking during thermal shock. the crack density curves for MgO crystals demonstrate that in a wide range of thermal shock intensity the ion implanted crystals develop a system of microcracks of a considerably higher density than the unimplanted ones. The high density of cracks nucleated in the ion implanted samples results in the formation of a surface energy absorbing layer which effectively absorbs elastic strain energy induced by thermal shock. As a consequence the depth of crack penetration in the layer and hence the degree of fracture damage are decreased. the results indicate that a Si implant decreases the temperature threshold of cracking and simultaneously increases the crack density in MgO crystals. However, in MgO crystals implanted with Cr a substantial increase in the crack density is achieved without a noticeable decrease in the temperature threshold of fracture. This effect is interpreted in terms of different Cr and Si implantation conditions and damage. The mechanical properties of the energy-absorbing layer and the relation to implantation-induced lattice damage are discussed. 11 refs., 4 figs

  14. Thermal annealing of waveguides formed by ion implantation of silica-on-si

    International Nuclear Information System (INIS)

    Johnson, C.M.; Ridgway, M.C.; Simpson, P.J.

    1998-01-01

    Full text: Buried channel waveguides were fabricated by ion implantation of PECVD-grown silica-on-Si. Post-implantation annealing was observed to have a significant influence on waveguide loss as measured at both 1.3 and 1.55 nm. Waveguide loss decreased abruptly from an as-implanted value of ∼1 dB/cm to ∼0.15 dB/cm following a 500 deg C/1 hr annealing cycle. However, annealing at greater temperatures (600 deg C) yielded a loss value comparable to the as implanted result (∼1dB/cm). This paper will address the factors that potentially influenced the observed loss behaviour which included thermally-induced changes to density and refractive index, precipitation of the implanted ions (Si) and mode profile spreading and subsequent interaction with the waveguide surface. Using surface profilometry and variable-energy positron spectroscopy, no significant density or structural changes were observed over the temperature range of 400-600deg C. The refractive index exhibited comparable behaviour as measured with prism coupling. The potential influence of precipitation was determined by comparing Si implantation with dual Si and O implantation, the latter with a dose ratio of 1:2. In addition, waveguides were also fabricated as a function of implantation energy to characterise the influence of the surface proximity

  15. Ion implantation into concave polymer surface

    Energy Technology Data Exchange (ETDEWEB)

    Sakudo, N. [Kanazawa Institute of Technology, Advanced Materials R and D Center, 3-1 Yatsukaho, Matto, Hakusan, Ishikawa 924-0838 (Japan)]. E-mail: sakudo@neptune.kanazawa-it.ac.jp; Shinohara, T. [Kanazawa Institute of Technology, Advanced Materials R and D Center, 3-1 Yatsukaho, Matto, Hakusan, Ishikawa 924-0838 (Japan); Amaya, S. [Kanazawa Institute of Technology, Advanced Materials R and D Center, 3-1 Yatsukaho, Matto, Hakusan, Ishikawa 924-0838 (Japan); Endo, H. [Kanazawa Institute of Technology, Advanced Materials R and D Center, 3-1 Yatsukaho, Matto, Hakusan, Ishikawa 924-0838 (Japan); Okuji, S. [Lintec Corp., 5-14-42 Nishiki-cho, Warabi, Saitama 335-0005 (Japan); Ikenaga, N. [Japan Science and Technology Corp., Nomigun, Ishikawa 923-1121 (Japan)

    2006-01-15

    A new technique for ion implantation into concave surface of insulating materials is proposed and experimentally studied. The principle is roughly described by referring to modifying inner surface of a PET (polyethylene terephthalate) bottle. An electrode that is supplied with positive high-voltage pulses is inserted into the bottle. Both plasma formation and ion implantation are simultaneously realized by the same high-voltage pulses. Ion sheath with a certain thickness that depends on plasma parameters is formed just on the inner surface of the bottle. Since the plasma potential is very close to that of the electrode, ions from the plasma are accelerated in the sheath and implanted perpendicularly into the bottle's inner surface. Laser Raman spectroscopy shows that the inner surface of an ion-implanted PET bottle is modified into DLC (diamond-like carbon). Gas permeation measurement shows that gas-barrier property enhances due to the modification.

  16. Enhanced electrochemical performance of three-dimensional Ni/Si nanocable arrays as a Li-ion battery anode by nitrogen doping in the Si shell.

    Science.gov (United States)

    Liu, Hao; Li, Quan

    2013-11-27

    In the present study, a configuration of three-dimensional Ni core/sputtered Si shell nanocable arrays is proposed to alleviate the severe volumetric change of Si during lithiation/delithiation. In particular, the effects of N doping in the Si shell on the electrochemical performance of the nanocable array electrodes have been investigated. It has been found that reduced interfacial resistance, enhanced effective Li ion diffusion coefficient in the active material, and more stable surface passivating layer are likely to be achieved by N doping, leading to an improvement of the rate performance and cyclability when compared to the undoped nanocable array counterpart.

  17. Kinetics and thermodynamics of Si(111) surface nitridation in ammonia

    Science.gov (United States)

    Mansurov, Vladimir G.; Malin, Timur V.; Galitsyn, Yurij G.; Shklyaev, Alexander A.; Zhuravlev, Konstantin S.

    2016-05-01

    Kinetics and thermodynamics of Si(111) surface nitridation under an ammonia flux at different substrate temperatures are investigated by reflection high-energy electron diffraction. Two different stages of the nitridation process were revealed. The initial stage is the fast (within few seconds) formation of ordered two-dimensional SiN phase, occuring due to the topmost active surface Si atom (Sisurf) interaction with ammonia molecules. It is followed by the late stage consisting in the slow (within few minutes) amorphous Si3N4 phase formation as a result of the interaction of Si atoms in the lattice site (Siinc) with chemisorbed ammonia molecules. It was found that the ordered SiN phase formation rate decreases, as the temperature increases. The kinetic model of the initial stage was developed, in which the ordered SiN phase formation is the two-dimensional phase transition in the lattice gas with SiN cells. The enthalpy of the active surface Si atom generation on the clean Si(111) surface was estimated to be about 1.5 eV. In contrast, the amorphous Si3N4 phase formation is the normal (thermally activated) chemical process with the first-order kinetics, whose activation energy and pre-exponential factor are 2.4 eV and 108 1/s, respectively.

  18. Positron Annihilation Study of Ion-irradiated Si

    International Nuclear Information System (INIS)

    Shin, Jung Ki; Kwon, Jun Hyun; Lee, Jong Yong

    2009-01-01

    Structural parts like a spaceship, satellite and solar cell are composed of metal alloy or semiconductor materials. Especially, Si is used as a primary candidate alloy. But, manned and robotic missions to the Earth's moon and Mars are exposed to a continuous flux of Galactic Cosmic Rays (GCR) and occasional, but intense, fluxes of Solar Energetic Particles. These natural radiations impose hazards to manned exploration. Irradiation of cosmic particle induces various changes in the mechanical and physical properties of device steels. It is, therefore, important to investigate radiation damage to the component materials in semiconductor. The evolution of radiation-induced defects leads to degradation of the mechanical properties. One of them includes irradiation embrittlement, which can cause a loss of ductility and further increase the probability of a brittle fracture. It can be more dangerous in the space. Positron annihilation lifetime spectroscopy(PALS) have been applied to investigate the production of vacancy-type defects for Ion-irradiated Si wafer penetrated by H, He, O and Fe ions. Then, we carried out a comparison with an un-irradiated Si wafer

  19. Effects of roughness and temperature on low-energy hydrogen positive and negative ion reflection from silicon and carbon surfaces.

    Science.gov (United States)

    Tanaka, N; Kato, S; Miyamoto, T; Nishiura, M; Tsumori, K; Matsumoto, Y; Kenmotsu, T; Okamoto, A; Kitajima, S; Sasao, M; Wada, M; Yamaoka, H

    2014-02-01

    Angle-resolved energy distribution functions of positive and negative hydrogen ions produced from a rough-finished Si surface under 1 keV proton irradiation have been measured. The corresponding distribution from a crystalline surface and a carbon surface are also measured for comparison. Intensities of positive and negative ions from the rough-finished Si are substantially smaller than those from crystalline Si. The angular distributions of these species are broader for rough surface than the crystalline surface. No significant temperature dependence for positive and negative ion intensities is observed for all samples in the temperature range from 300 to 400 K.

  20. Scanning probe microscopy of single Au ion implants in Si

    International Nuclear Information System (INIS)

    Vines, L.; Monakhov, E.; Maknys, K.; Svensson, B.G.; Jensen, J.; Hallen, A.; Kuznetsov, A. Yu.

    2006-01-01

    We have studied 5 MeV Au 2+ ion implantation with fluences between 7 x 10 7 and 2 x 10 8 cm -2 in Si by deep level transient spectroscopy (DLTS) and scanning capacitance microscopy (SCM). The DLTS measurements show formation of electrically active defects such as the two negative charge states of the divacancy (V 2 (=/-) and V 2 (-/0)) and the vacancy-oxygen (VO) center. It is observed that the intensity of the V 2 (=/-) peak is lower compared to that of V 2 (-/0) by a factor of 5. This has been attributed to a highly localized distribution of the defects along the ion tracks, which results in trapping of the carriers at V 2 (-/0) and incomplete occupancy of V 2 (=/-). The SCM measurements obtained in a plan view show a random pattern of regions with a reduced SCM signal for the samples implanted with fluence above 2 x 10 8 cm -2 . The reduced SCM signal is attributed to extra charges associated with acceptor states, such as V 2 (-/0), formed along the ion tracks in the bulk Si. Indeed, the electron emission rate from the V 2 (-/0) state is in the range of 10 kHz at room temperature, which is well below the probing frequency of the SCM measurements, resulting in 'freezing' of electrons at V 2 (-/0)

  1. Radiation Damage in Si Diodes from Short, Intense Ion Pulses

    Science.gov (United States)

    de Leon, S. J.; Ludewigt, B. A.; Persaud, A.; Seidl, P. A.; Schenkel, T.

    2017-10-01

    The Neutralized Drift Compression Experiment (NDCX-II) at Berkeley Lab is an induction accelerator studying the effects that concentrated ion beams have on various materials. Charged particle radiation damage was the focus of this research - we have characterized a series of Si diodes using an electrometer and calibrated the diodes response using an 241Am alpha source, both before and after exposing the diodes to 1 MeV He ions in the accelerator. The key part here is that the high intensity pulses from NDCX-II (>1010 ions/cm2 per pulse in charge collection efficiency and an increase in leakage current. Testing dose-rate effects in Si diodes and other semiconductors is a crucial step in designing sustainable instruments that can encounter high doses of radiation, such as high intensity accelerators, fusion energy experiments and space applications and results from short pulses can inform models of radiation damage evolution. This work was supported by the Office of Science of the US Department of Energy under contract DE-AC0205CH11231.

  2. Ion-induced damage and amorphization in Si

    International Nuclear Information System (INIS)

    Holland, O.W.; White, C.W.

    1990-01-01

    Ion-induced damage growth in high-energy, self-ion irradiated Si was studied using electron microscopy and Rutherford backscattering spectroscopy. The results show that there is a marked variation in the rate of damage growth, as well as the damage morphology, along the path of the ion. Near the ion end-of-range (eor), damage increases monotonically with ion fluence until a buried amorphous layer is formed, while damage growth saturates at a low level in the region ahead. The morphology of the damage in the saturated region is shown to consist predominantly of simple defect clusters such as the divacancy. Damage growth remains saturated ahead of the eor until expansion of the buried amorphous layer encroaches into the region. A homogeneous growth model is presented which accounts for damage saturation, and accurately predicts the dose-rate dependence of the saturation level. Modifications of the model are discussed which are needed to account for the rapid growth in the eor region and near the interface of the buried amorphous layer. Two important factors contributing to rapid damage growth are identified. Spatial separation of the Frenkel defect pairs (i.e. interstitials and vacancies) due to the momentum of the interstitials is shown to greatly impact damage growth near the eor, while uniaxial strain in the interfacial region of the amorphous layer is identified as an important factor contributing to growth at that location. 20 refs., 10 figs

  3. Novel approach for improving the performance of Si-based anodes in lithium-ion batteries

    Science.gov (United States)

    Sadeghipari, M.; Mashayekhi, A.; Mohajerzadeh, S.

    2018-02-01

    Herein, we report successful deposition of aluminum oxide films on the silicon nanowires (SiNWs) to realize core–shell silicon-based lithium-ion battery anodes. By means of reactive ion etching, it has been possible to form an ultra-thin layer of Al2O3 on SiNWs through hydrogen plasma. This deposition technique leads to the formation of tiny holes on the surface of the Al2O3 layer while introducing the pore sites into the inner silicon material without damaging the whole structure. SiNW@Al2O3 core–shell nanostructures were used as the effective anode materials and showed a superior electrochemical performance compared to conventional SiNWs. Our electrode exhibited the high first cycle specific discharge capacity of 3936 mAh g‑1 at a rate of C/16 as well as high rate capability. Furthermore, this anode electrode showed less than 6% degradation of specific capacity over 120 cycles at high rate density of 2C and it delivers high reversible capacity of 965 mAh g‑1. The improvement in the electrochemical properties of our electrode is achieved due to both a high specific capacity of Si core and the effect of aluminum oxide shell on active material cycling stability.

  4. Near-surface and bulk behavior of Ag in SiC

    International Nuclear Information System (INIS)

    Xiao, H.Y.; Zhang, Y.; Snead, L.L.; Shutthanandan, V.; Xue, H.Z.; Weber, W.J.

    2012-01-01

    Highlights: ► Ag release from SiC poses problems in safe operation of nuclear reactors. ► Near-surface and bulk behavior of Ag are studied by ab initio and ion beam methods. ► Ag prefers to adsorb on the surface rather than in the bulk SiC. ► At high temperature Ag desorbs from the surface instead of diffusion into bulk SiC. ► Surface diffusion may be a dominating mechanism accounting for Ag release from SiC. - Abstract: The diffusive release of fission products, such as Ag, from TRISO particles at high temperatures has raised concerns regarding safe and economic operation of advanced nuclear reactors. Understanding the mechanisms of Ag diffusion is thus of crucial importance for effective retention of fission products. Two mechanisms, i.e., grain boundary diffusion and vapor or surface diffusion through macroscopic structures such as nano-pores or nano-cracks, remain in debate. In the present work, an integrated computational and experimental study of the near-surface and bulk behavior of Ag in silicon carbide (SiC) has been carried out. The ab initio calculations show that Ag prefers to adsorb on the SiC surface rather than in the bulk, and the mobility of Ag on the surface is high. The energy barrier for Ag desorption from the surface is calculated to be 0.85–1.68 eV, and Ag migration into bulk SiC through equilibrium diffusion process is not favorable. Experimentally, Ag ions are implanted into SiC to produce Ag profiles buried in the bulk and peaked at the surface. High-temperature annealing leads to Ag release from the surface region instead of diffusion into the interior of SiC. It is suggested that surface diffusion through mechanical structural imperfection, such as vapor transport through cracks in SiC coatings, may be a dominating mechanism accounting for Ag release from the SiC in the nuclear reactor.

  5. Ion beam analysis of metal ion implanted surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Evans, P.J.; Chu, J.W.; Johnson, E.P.; Noorman, J.T. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Sood, D.K. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1993-12-31

    Ion implantation is an established method for altering the surface properties of many materials. While a variety of analytical techniques are available for the characterisation of implanted surfaces, those based on particle accelerators such as Rutherford backscattering (RBS) and nuclear reaction analysis (NRA) provide some of the most useful and powerful for this purpose. Application of the latter techniques to metal ion implantation research at ANSTO will be described with particular reference to specific examples from recent studies. Where possible, the information obtained from ion beam analysis will be compared with that derived from other techniques such as Energy Dispersive X-ray (EDX) and Auger spectroscopies. 4 refs., 5 figs.

  6. Ion implantation into amorphous Si layers to form carrier-selective contacts for Si solar cells

    International Nuclear Information System (INIS)

    Feldmann, Frank; Mueller, Ralph; Reichel, Christian; Hermle, Martin

    2014-01-01

    This paper reports our findings on the boron and phosphorus doping of very thin amorphous silicon layers by low energy ion implantation. These doped layers are implemented into a so-called tunnel oxide passivated contact structure for Si solar cells. They act as carrier-selective contacts and, thereby, lead to a significant reduction of the cell's recombination current. In this paper we address the influence of ion energy and ion dose in conjunction with the obligatory high-temperature anneal needed for the realization of the passivation quality of the carrier-selective contacts. The good results on the phosphorus-doped (implied V oc = 725 mV) and boron-doped passivated contacts (iV oc = 694 mV) open a promising route to a simplified interdigitated back contact (IBC) solar cell featuring passivated contacts. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO2 interface under γ-irradiation: effect of preliminary ion implantation

    International Nuclear Information System (INIS)

    Naumova, O V; Fomin, B I; Ilnitsky, M A; Popov, V P

    2012-01-01

    In this study, we examined the effect of preliminary boron or phosphorous implantation on charge accumulation in the buried oxide of SOI-MOSFETs irradiated with γ-rays in the total dose range (D) of 10 5 –5 × 10 7 rad. The buried oxide was obtained by high-temperature thermal oxidation of Si, and it was not subjected to any implantation during the fabrication process of SOI structures. It was found that implantation with boron or phosphorous ions, used in fabrication technologies of SOI-MOSFETs, increases the concentration of precursor traps in the buried oxide of SOI structures. Unlike in the case of boron implantation, phosphorous implantation leads to an increased density of states at the Si/buried SiO 2 interface during subsequent γ-irradiation. In the γ-irradiated SOI-MOSFETs, the accumulated charge density and the density of surface states in the Si/buried oxide layer systems both vary in proportion to k i ln D. The coefficients k i for as-fabricated and ion-implanted Si/buried SiO 2 systems were evaluated. From the data obtained, it was concluded that a low density of precursor hole traps was a factor limiting the positive charge accumulation in the buried oxide of as-fabricated (non-implanted) SOI structures with the bonded Si/buried SiO 2 interface. (paper)

  8. Effect of PECVD SiNx/SiOy Nx –Si interface property on surface passivation of silicon wafer

    International Nuclear Information System (INIS)

    Jia Xiao-Jie; Zhou Chun-Lan; Zhou Su; Wang Wen-Jing; Zhu Jun-Jie

    2016-01-01

    It is studied in this paper that the electrical characteristics of the interface between SiO y N x /SiN x stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiO y N x layer on interface parameters, such as interface state density Di t and fixed charge Q f , and the surface passivation quality of silicon are observed. Capacitance–voltage measurements reveal that inserting a thin SiO y N x layer between the SiN x and the silicon wafer can suppress Q f in the film and D it at the interface. The positive Q f and D it and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiO y N x film increasing. Prepared by deposition at a low temperature and a low ratio of N 2 O/SiH 4 flow rate, the SiO y N x /SiN x stacks result in a low effective surface recombination velocity (S eff ) of 6 cm/s on a p-type 1 Ω·cm–5 Ω·cm FZ silicon wafer. The positive relationship between S eff and D it suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. (paper)

  9. Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

    Directory of Open Access Journals (Sweden)

    C. G. Jin

    2008-01-01

    Full Text Available Silicon carbide (SiC films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM, scanning electron microscopy (SEM, Fourier transform infrared spectroscopy (FTIR, and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

  10. Formation of oxides and segregation of mobile atoms during SIMS profiling of Si with oxygen ions

    International Nuclear Information System (INIS)

    Petravic, M.; Williams, J.S.; Svensson, B.G.; Conway, M.

    1993-01-01

    An oxygen beam is commonly used in secondary ion mass spectroscopy (SIMS) analysis to enhance the ionization probability for positive secondary ions. It has been observed, however, that this technique produces in some cases a great degradation of depth resolution. The most pronounced effects have been found for impurities in silicon under oxygen bombardment at angles of incidence smaller than ∼ 30 deg from the surface normal. A new approach is described which involved broadening of SIMS profiles for some mobile atoms, such as Cu, Ni and Au, implanted into silicon. The anomalously large broadening is explained in terms of segregation at a SiO 2 /Si interface formed during bombardment with oxygen at impact angles less than 30 deg. 2 refs., 1 tab., 4 figs

  11. Angular and energy dependence of ion bombardment of Mo/Si multilayers

    DEFF Research Database (Denmark)

    Voorma, H.J.; Louis, E.; Bijkerk, F.

    1997-01-01

    the parameters of Kr+ ion bombardment have been optimized within the energy range 300 eV-2 keV and an angular range between 20 degrees and 50 degrees. The optical performance of the Mo/Si multilayers is determined by absolute measurements of the near-normal-incidence reflectivity at 14.4 nm wavelength...... are found to be 2 keV at 50 degrees angle of incidence with respect to the surface. These settings result in 47% reflectivity at 85 degrees (lambda = 14.4 nm) for a 16-period Mo/Si multilayer mirror, corresponding to an interface roughness of 0.21 nm rms. Analysis shows that the interface roughness......, the angular dependence of the etch yield, obtained from the in situ reflectivity measurements, is investigated in order o determine the optimal ion beam parameters for the production of multilayer mirrors on curved substrates....

  12. Heavy ion recoil spectrometry of Si{sub x}Ge{sub 1-x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Walker, S.R.; Johnston, P.N.; Bubb, I.F. [Royal Melbourne Inst. of Tech., VIC (Australia); Cohen, D.D.; Dytlewski, N. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Hult, M.; Whitlow, H.J. [Lund Institute of Technology, Solvegatan (Sweden). Department of Nuclear Physics; Zaring, C.; Oestling, M. [Royal Inst. of Tech., Stockholm (Sweden). Dept. of Solid State Electronics

    1993-12-31

    Mass and energy dispersive recoil spectrometry employing 77 MeV {sup 127}I ions from ANTARES (FN Tandem) facility at Lucas Heights has been used to examine the isotopic composition of samples of Si{sub x}Ge{sub 1-x} grown at the Australian National University by Electron Beam Evaporation (EBE). The recoiling target nuclei were analysed by a Time Of Flight and Energy (TOF-E) detector telescope composed of two timing pickoff detectors and a surface barrier (energy) detector. From the time of flight and energy, the ion mass can be determined and individual depth distributions for each element can be obtained. Recoil spectrometry has shown the presence of oxygen in the Si{sub x}Ge{sub 1-x} layer and has enabled the separate determination of energy spectra for individual elements. 9 refs., 3 figs.

  13. Formation of oxides and segregation of mobile atoms during SIMS profiling of Si with oxygen ions

    Energy Technology Data Exchange (ETDEWEB)

    Petravic, M.; Williams, J.S.; Svensson, B.G.; Conway, M. [Australian National Univ., Canberra, ACT (Australia). Research School of Physical Sciences

    1993-12-31

    An oxygen beam is commonly used in secondary ion mass spectroscopy (SIMS) analysis to enhance the ionization probability for positive secondary ions. It has been observed, however, that this technique produces in some cases a great degradation of depth resolution. The most pronounced effects have been found for impurities in silicon under oxygen bombardment at angles of incidence smaller than {approx} 30 deg from the surface normal. A new approach is described which involved broadening of SIMS profiles for some mobile atoms, such as Cu, Ni and Au, implanted into silicon. The anomalously large broadening is explained in terms of segregation at a SiO{sub 2}/Si interface formed during bombardment with oxygen at impact angles less than 30 deg. 2 refs., 1 tab., 4 figs.

  14. Surface engineering of SiC via sublimation etching

    International Nuclear Information System (INIS)

    Jokubavicius, Valdas; Yazdi, Gholam R.; Ivanov, Ivan G.; Niu, Yuran; Zakharov, Alexei; Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa

    2016-01-01

    Highlights: • Comparison of 6H-, 4H- and 3C-SiC sublimation etching. • Effects of Si-C and Si-C-Ta chemical systems on etching mechanisms. • Effect of etching ambient on surface reconstruction. • Application of etched 4H-SiC surface for the growth of graphene nanoribbons is illustrated. - Abstract: We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10 −5 mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  15. Surface engineering of SiC via sublimation etching

    Energy Technology Data Exchange (ETDEWEB)

    Jokubavicius, Valdas, E-mail: valjo@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden); Yazdi, Gholam R.; Ivanov, Ivan G. [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden); Niu, Yuran; Zakharov, Alexei [Max Lab, Lund University, S-22100 Lund (Sweden); Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden)

    2016-12-30

    Highlights: • Comparison of 6H-, 4H- and 3C-SiC sublimation etching. • Effects of Si-C and Si-C-Ta chemical systems on etching mechanisms. • Effect of etching ambient on surface reconstruction. • Application of etched 4H-SiC surface for the growth of graphene nanoribbons is illustrated. - Abstract: We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10{sup −5} mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  16. Ion assisted deposition of SiO2 film from silicon

    Science.gov (United States)

    Pham, Tuan. H.; Dang, Cu. X.

    2005-09-01

    Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.

  17. SiO{sub 2} on silicon: behavior under heavy ion irradiation; SiO{sub 2} sur silicium: comportement sous irradiation avec des ions lourds

    Energy Technology Data Exchange (ETDEWEB)

    Rotaru, C

    2004-03-15

    Heavy ion irradiation was performed on a-SiO{sub 2} layers deposited on Si. Damage of the surface was studied by means of Atomic Force Microscopy. Hillocks appear for an electronic stopping power higher than 16 keV/nm. The height of the hillocks decreases with the thickness of the oxide layer. Infrared Spectroscopy studies show that the damage threshold for a-SiO{sub 2} is at an electronic stopping power of 2 keV/nm. Therefore it is probable that the origin of the hillocks comes from the silicon layer. This could be explain within the frame of thermal spike model. The theoretical thresholds are 8 keV/nm and 1.8 keV/nm for silicon and a-SiO{sub 2} respectively. Chemical etching after irradiation gives a technical possibility to create nano-pits, whose size and shape can be controlled. Additionally, these structures allowed to determine the AFM tip radius. (author)

  18. Ion surface treatments on organic materials

    Science.gov (United States)

    Iwaki, Masaya

    2001-04-01

    A study has been made of surface modification of various organic materials by ion bombardment or implantation to make the surface properties of high and multiple functions in RIKEN. Substrates used were polyimide (PI), polyacetylene, polytetrafluoroethylene (PTFE), polystyrene (PS), silicone rubber, various kinds of proteins and so on. Bombarded or implanted ions were inert gas elements, chemically active gaseous elements and metallic elements. Surface properties such as electrical conductivity, wettability and cell adhesion of implanted layers have been investigated. Surface characterization of implanted materials has been carried out by means of transmission electron microscopy, laser Raman spectroscopy, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. In this paper, studies in RIKEN are reviewed of electrical conductivity, optical absorbance, wettability and cell adhesion depending on current densities and doping elements. Applications of ion bombardment to biomedical materials are introduced using cell adhesion control. It is concluded that ion bombardment or implantation is useful to change and control surface properties of various organic materials.

  19. Surface generation of negative hydrogen ion beams

    International Nuclear Information System (INIS)

    Bommel, P.J.M. van.

    1984-01-01

    This thesis describes investigations on negative hydrogen ion sources at the ampere level. Formation of H - ions occurs when positive hydrogen ions capture two electrons at metal surfaces. The negative ionization probability of hydrogen at metal surfaces increases strongly with decreasing work function of the surface. The converters used in this study are covered with cesium. Usually there are 'surface plasma sources' in which the hydrogen source plasma interacts with a converter. In this thesis the author concentrates upon investigating a new concept that has converters outside the plasma. In this approach a positive hydrogen ion beam is extracted from the plasma and is subsequently reflected from a low work function converter surface. (Auth.)

  20. Controlled surface chemistry of diamond/β-SiC composite films for preferential protein adsorption.

    Science.gov (United States)

    Wang, Tao; Handschuh-Wang, Stephan; Yang, Yang; Zhuang, Hao; Schlemper, Christoph; Wesner, Daniel; Schönherr, Holger; Zhang, Wenjun; Jiang, Xin

    2014-02-04

    Diamond and SiC both process extraordinary biocompatible, electronic, and chemical properties. A combination of diamond and SiC may lead to highly stable materials, e.g., for implants or biosensors with excellent sensing properties. Here we report on the controllable surface chemistry of diamond/β-SiC composite films and its effect on protein adsorption. For systematic and high-throughput investigations, novel diamond/β-SiC composite films with gradient composition have been synthesized using the hot filament chemical vapor deposition (HFCVD) technique. As revealed by scanning electron microscopy (SEM), the diamond/β-SiC ratio of the composite films shows a continuous change from pure diamond to β-SiC over a length of ∼ 10 mm on the surface. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) was employed to unveil the surface termination of chemically oxidized and hydrogen treated surfaces. The surface chemistry of the composite films was found to depend on diamond/β-SiC ratio and the surface treatment. As observed by confocal fluorescence microscopy, albumin and fibrinogen were preferentially adsorbed from buffer: after surface oxidation, the proteins preferred to adsorb on diamond rather than on β-SiC, resulting in an increasing amount of proteins adsorbed to the gradient surfaces with increasing diamond/β-SiC ratio. By contrast, for hydrogen-treated surfaces, the proteins preferentially adsorbed on β-SiC, leading to a decreasing amount of albumin adsorbed on the gradient surfaces with increasing diamond/β-SiC ratio. The mechanism of preferential protein adsorption is discussed by considering the hydrogen bonding of the water self-association network to OH-terminated surfaces and the change of the polar surface energy component, which was determined according to the van Oss method. These results suggest that the diamond/β-SiC gradient film can be a promising material for biomedical applications which

  1. Charge exchange between low energy Si ions and Cs adatoms

    Czech Academy of Sciences Publication Activity Database

    Chen, X.; Šroubek, Zdeněk; Yarmoff, J. A.

    2008-01-01

    Roč. 602, č. 2 (2008), s. 620-629 ISSN 0039-6028 R&D Projects: GA AV ČR IAA1067401; GA MŠk MEB060715 Institutional research plan: CEZ:AV0Z20670512 Keywords : ion-surface impact * scattering * silicon * alkali metals Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.731, year: 2008

  2. Characterization of semiconductor surfaces and interfaces by high energy ion scattering

    International Nuclear Information System (INIS)

    Narusawa, Tadashi; Kobayashi, K.L.I.; Nakashima, Hisao

    1984-01-01

    The use of surface peak, which appears in MeV ion channeling experiments, is demonstrated as a local probe for direct and quantitative measurements of atomic displacements smaller than --0.1A. The atomic structures of GaAs(001)-c(4x4) clean surface and hydrogen-absorbed (1x1) surface are analyzed by this technique as well as the interface atomic structures of GaAs(001)-SiOsub(x) and Si(111)-Pd systems. (author)

  3. Optical surfacing via linear ion source

    International Nuclear Information System (INIS)

    Wu, Lixiang; Wei, Chaoyang; Shao, Jianda

    2017-01-01

    We present a concept of surface decomposition extended from double Fourier series to nonnegative sinusoidal wave surfaces, on the basis of which linear ion sources apply to the ultra-precision fabrication of complex surfaces and diffractive optics. The modified Fourier series, or sinusoidal wave surfaces, build a relationship between the fabrication process of optical surfaces and the surface characterization based on power spectral density (PSD) analysis. Also, we demonstrate that the one-dimensional scanning of linear ion source is applicable to the removal of mid-spatial frequency (MSF) errors caused by small-tool polishing in raster scan mode as well as the fabrication of beam sampling grating of high diffractive uniformity without a post-processing procedure. The simulation results show that optical fabrication with linear ion source is feasible and even of higher output efficiency compared with the conventional approach.

  4. Self-organization of nanocluster δ-layers at ion-beam-mixed Si-SiO2 interfaces

    International Nuclear Information System (INIS)

    Roentzsch, L.

    2003-11-01

    This diploma thesis presents experimental evidence of a theoretical concept which predicts the self-organization of δ-layers of silicon nanoclusters in the buried oxide of a MOS-like structure. This approach of ''bottom-up'' structuring might be of eminent importance in view of future semiconductor memory devices. Unconventionally, a 15 nm thin SiO 2 layer, which is enclosed by a 50 nm poly-Si capping layer and the Si substrate, is irradiated with Si + ions. Ion impact drives the system to a state far from thermodynamic equilibrium, i.e. the local composition of the target is modified to a degree unattainable in common processes. A region of SiO x (x 2 matrix at a distance of ∼3 nm from the Si substrate. The physical mechanisms of ion mixing of the two Si-SiO 2 interfaces and subsequent phase separation, which result in the desired sample structure, are elucidated from the viewpoint of computer simulations. In addition, experimental evidence is presented based on various methods, including TEM, RBS, and SIMS. A novel method of Si nanocluster decoration is of particular importance which applies Ge as contrast enhancing element in TEM studies of tiny Si nanoclusters. (orig.)

  5. Preparation of a Si/SiO2 -Ordered-Mesoporous-Carbon Nanocomposite as an Anode for High-Performance Lithium-Ion and Sodium-Ion Batteries.

    Science.gov (United States)

    Zeng, Lingxing; Liu, Renpin; Han, Lei; Luo, Fenqiang; Chen, Xi; Wang, Jianbiao; Qian, Qingrong; Chen, Qinghua; Wei, Mingdeng

    2018-04-03

    In this work, an Si/SiO 2 -ordered-mesoporous carbon (Si/SiO 2 -OMC) nanocomposite was initially fabricated through a magnesiothermic reduction strategy by using a two-dimensional bicontinuous mesochannel of SiO 2 -OMC as a precursor, combined with an NaOH etching process, in which crystal Si/amorphous SiO 2 nanoparticles were encapsulated into the OMC matrix. Not only can such unique porous crystal Si/amorphous SiO 2 nanoparticles uniformly dispersed in the OMC matrix mitigate the volume change of active materials during the cycling process, but they can also improve electrical conductivity of Si/SiO 2 and facilitate the Li + /Na + diffusion. When applied as an anode for lithium-ion batteries (LIBs), the Si/SiO 2 -OMC composite displayed superior reversible capacity (958 mA h g -1 at 0.2 A g -1 after 100 cycles) and good cycling life (retaining a capacity of 459 mA h g -1 at 2 A g -1 after 1000 cycles). For sodium-ion batteries (SIBs), the composite maintained a high capacity of 423 mA h g -1 after 100 cycles at 0.05 A g -1 and an extremely stable reversible capacity of 190 mA h g -1 was retained even after 500 cycles at 1 A g -1 . This performance is one of the best long-term cycling properties of Si-based SIB anode materials. The Si/SiO 2 -OMC composites exhibited great potential as an alternative material for both lithium- and sodium-ion battery anodes. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Contribution of NIEL for Gain Degradation (β in Si8+ Ion Irradiated Silicon Power Transistor

    Directory of Open Access Journals (Sweden)

    C. M. Dinesh

    2008-12-01

    Full Text Available The concept of non-ionizing energy loss (NIEL has been found useful for characterizing displacement damage defects in materials and devices. When NPN power transistors (2N6688 manufactured by BEL, India are exposed for 110 MeV Si8+ ion irradiation in the fluence range 5 x 109 to 1 x 1013 ions cm-2 at room temperature (300 K and at liquid nitrogen temperature (77 K cause functional failure due to surface and bulk defects. The output collector characteristics are studied as a function of total ionizing dose (TID and total displacement damage dose (Dd obtained using TRIM Monte Carlo code. It is observed that the shift in the output saturation voltage is considerably less for heavy ion irradiation compared to lighter ions like lithium ion irradiation. The gain of the transistor degrades with ion irradiation. Base reverse biased leakage current (BRBLC increases with increase in ion fluence. The observed results are almost independent of the irradiation temperature. These studies help to improve the device fabrication technology to make Radiation Hard Devices for advanced applications.

  7. A scanning probe mounted on a field-effect transistor: Characterization of ion damage in Si.

    Science.gov (United States)

    Shin, Kumjae; Lee, Hoontaek; Sung, Min; Lee, Sang Hoon; Shin, Hyunjung; Moon, Wonkyu

    2017-10-01

    We have examined the capabilities of a Tip-On-Gate of Field-Effect Transistor (ToGoFET) probe for characterization of FIB-induced damage in Si surface. A ToGoFET probe is the SPM probe which the Field Effect Transistor(FET) is embedded at the end of a cantilever and a Pt tip was mounted at the gate of FET. The ToGoFET probe can detect the surface electrical properties by measuring source-drain current directly modulated by the charge on the tip. In this study, a Si specimen whose surface was processed with Ga+ ion beam was prepared. Irradiation and implantation with Ga+ ions induce highly localized modifications to the contact potential. The FET embedded on ToGoFET probe detected the surface electric field profile generated by schottky contact between the Pt tip and the sample surface. Experimentally, it was shown that significant differences of electric field due to the contact potential barrier in differently processed specimens were observed using ToGOFET probe. This result shows the potential that the local contact potential difference can be measured by simple working principle with high sensitivity. Copyright © 2017 Elsevier Ltd. All rights reserved.

  8. Study of ion beam sputtered Fe/Si interfaces as a function of Si layer thickness

    Science.gov (United States)

    Kumar, Anil; Brajpuriya, Ranjeet; Singh, Priti

    2018-01-01

    The exchange interaction in metal/semiconductor interfaces is far from being completely understood. Therefore, in this paper, we have investigated the nature of silicon on the Fe interface in the ion beam deposited Fe/Si/Fe trilayers keeping the thickness of the Fe layers fixed at 3 nm and varying the thickness of the silicon sandwich layer from 1.5 nm to 4 nm. Grazing incidence x-ray diffraction and atomic force microscopy techniques were used, respectively, to study the structural and morphological changes in the deposited films as a function of layer thickness. The structural studies show silicide formation at the interfaces during deposition and better crystalline structure of Fe layers at a lower spacer layer thickness. The magnetization behavior was investigated using magneto-optical Kerr effect, which clearly shows that coupling between the ferromagnetic layers is highly influenced by the semiconductor spacer layer thickness. A strong antiferromagnetic coupling was observed for a value of tSi = 2.5 nm but above this value an unexpected behavior of hysteresis loop (step like) with two coercivity values is recorded. For spacer layer thickness greater than 2.5 nm, an elemental amorphous Si layer starts to appear in the spacer layer in addition to the silicide layer at the interfaces. It is observed that in the trilayer structure, Fe layers consist of various stacks, viz., Si doped Fe layers, ferromagnetic silicide layer, and nonmagnetic silicide layer at the interfaces. The two phase hysteresis loop is explained on the basis of magnetization reversal of two ferromagnetic layers, independent of each other, with different coercivities. X-ray photo electron spectroscopy technique was also used to study interfaces characteristics as a function of tSi.

  9. Formation of hexagonal silicon carbide by high energy ion beam irradiation on Si (1 0 0) substrate

    International Nuclear Information System (INIS)

    Bhuyan, H; Favre, M; Valderrama, E; Avaria, G; Chuaqui, H; Mitchell, I; Wyndham, E; Saavedra, R; Paulraj, M

    2007-01-01

    We report the investigation of high energy ion beam irradiation on Si (1 0 0) substrates at room temperature using a low energy plasma focus (PF) device operating in methane gas. The unexposed and ion exposed substrates were characterized by x-ray diffraction, scanning electron microscopy (SEM), photothermal beam deflection, energy-dispersive x-ray analysis and atomic force microscopy (AFM) and the results are reported. The interaction of the pulsed PF ion beams, with characteristic energy in the 60-450 keV range, with the Si surface, results in the formation of a surface layer of hexagonal silicon carbide. The SEM and AFM analyses indicate clear step bunching on the silicon carbide surface with an average step height of 50 nm and a terrace width of 800 nm

  10. Post-annealing recrystallization and damage recovery process in Fe ion implanted Si

    International Nuclear Information System (INIS)

    Naito, Muneyuki; Hirata, Akihiko; Ishimaru, Manabu; Hirotsu, Yoshihiko

    2007-01-01

    We have investigated ion-beam-induced and thermal annealing-induced microstructures in high fluence Fe implanted Si using transmission electron microscopy. Si(1 1 1) substrates were irradiated with 120 keV Fe ions at 120 K to fluences of 0.4 x 10 17 and 4.0 x 10 17 cm -2 . A continuous amorphous layer was formed on Si substrates in both as-implanted samples. After thermal annealing at 1073 K for 2 h, β-FeSi 2 fine particles buried in a polycrystalline Si layer were observed in the low fluence sample, while a continuous β-FeSi 2 layer was formed in the high fluence sample. We discuss the relationship between ion fluence and defects recovery process in Fe ion implanted Si

  11. Ion Motion Stability in Asymmetric Surface Electrode Ion Traps

    Science.gov (United States)

    Shaikh, Fayaz; Ozakin, Arkadas

    2010-03-01

    Many recently developed designs of the surface electrode ion traps for quantum information processing have asymmetry built into their geometries. The asymmetry helps rotate the trap axes to angles with respect to electrode surface that facilitate laser cooling of ions but introduces a relative angle between the RF and DC fields and invalidates the classical stability analysis of the symmetric case for which the equations of motion are decoupled. For asymmetric case the classical motion of a single ion is given by a coupled, multi-dimensional version of Mathieu's equation. In this poster we discuss the stability diagram of asymmetric surface traps by performing an approximate multiple scale perturbation analysis of the coupled Mathieu equations, and validate the results with numerical simulations. After obtaining the stability diagram for the linear fields, we simulate the motion of an ion in a given asymmetric surface trap, utilizing a method-of-moments calculation of the electrode fields. We obtain the stability diagram and compare it with the ideal case to find the region of validity. Finally, we compare the results of our stability analysis to experiments conducted on a microfabricated asymmetric surface trap.

  12. Second harmonic generation spectroscopy on Si surfaces and interfaces

    DEFF Research Database (Denmark)

    Pedersen, Kjeld

    2010-01-01

    Optical second harmonic generation (SHG) spectroscopy studies of Si(111) surfaces and interfaces are reviewed for two types of systems: (1) clean 7 x 7 and root 3 x root 3-Ag reconstructed surfaces prepared under ultra-high vacuum conditions where surface states are excited and (2) interfaces...... in silicon-on-insulator (SOI) structures and thin metal films on Si surfaces where several interfaces contribute to the SHG. In all the systems resonances are seen at interband transitions near the bulk critical points E-1 and E-2. On the clean surfaces a number of resonances appear below the onset of bulk...

  13. Selective area growth of InAs nanowires from SiO2/Si(1 1 1) templates direct-written by focused helium ion beam technology

    Science.gov (United States)

    Yang, Che-Wei; Chen, Wei-Chieh; Chou, Chieh; Lin, Hao-Hsiung

    2018-02-01

    We report on the selective area growth of InAs nanowires on patterned SiO2/Si (1 1 1) nano-holes, prepared by focused helium ion beam technology. We used a single spot mode, in which the focused helium ion beam was fixed on a single point with a He+-ion dosage, ranging from 1.5 pC to 8 pC, to drill the nano-holes. The smallest hole diameter achieved is ∼8 nm. We found that low He+-ion dosage is able to facilitate the nucleation of (1 1 1)B InAs on the highly mismatched Si, leading to the vertical growth of InAs nanowires (NWs). High He-ion dosage, on the contrary, severely damaged Si surface, resulting in tilted and stripe-like NWs. In addition to titled NW grown from (1 1 1)A InAs domain, a new titled growth direction due to defect induced twinning was observed. Cross-sectional TEM images of vertical NWs show mixed wurtizite (WZ) and zincblende (ZB) phases, while WZ phase dominants. The stacking faults resulting from the phase change is proportional to NW diameter, suggesting that the critical diameter of phase turning is larger than 110 nm, the maximum diameter of our NWs. Period of misfit dislocation at the InAs/Si interface of vertical NW is also found larger than the theoretical value when the diameter of heterointerface is smaller than 50 nm, indicating that the small contact area is able to accommodate the large lattice and thermal mismatch between InAs and Si.

  14. Energy spectroscopy studies of radiation-induced damaged surfaces and interfaces in SiO 2/Si by light charged particles

    Science.gov (United States)

    Zhongquan, Ma; Qi, Guo; Tao, Jin

    1992-09-01

    In this paper, the three different experimental techniques of AES (Auger electron spectroscopy), ARXPS (angle-resolved X-ray photoelectron spectroscopy) and DLTS (deep level transient spectroscopy) with C- V measurements have been applied to study damaged surfaces and interfaces of SiO 2Si in MOS. The defects, appearing at the surface of the dielectric layer and the interface between SiO 2 and Si, induced by energetic electron and/or hydrogen ion (H +) beams, were independently investigated using ARXPS and AES combined with DLTS, respectively. The more intermediate oxidation states, such as Si 1+, Si 2+ and Si 3+, corresponding to Si 2O, SiO and Si 2O 3 clusters formed at the surface and the transition regions, were obtained for the irradiated sample. The changes of the intensity, full width at half maximum (fwhm) and binding energy of each ARXPS spectrum with take-off angle showed that silicon-rich clusters or chains, and about 4.8 Å of an amorphous silicon, actually existed in the outermost surface as a result of preferential sputtering of oxygen by electron ionization and displacement by H +. The Si 2p core-level spectra were analyzed in terms of five chemically shifted components corresponding to the basic Si binding units SiO n with n = 0, 1, ⋯, 4. The concentration of these bonding units as a function of effective depth of emission was essentially in agreement with the random-bonding model. But some separation into a silicon-rich phase was also evident at intermediate stoichiometries and stacks. In addition, more dangling bonds of Si were present overall in the oxide layer, which acted with an amphoteric character and caused the defect states to lie in the lower half of the bandgap.

  15. Cu diffusion across a clean Si(111) surface

    CERN Document Server

    Dolbak, A E; Olshanetskij, B Z

    2001-01-01

    Cu diffusion across a clean Si(111) surface has been studied by the Auger electron spectroscopy and the low energy electron diffraction. It has been established that enhanced copper density areas with noticeable boundaries manifest themselves and a Si(111) - 5 x 5 - Cu surface phase is formed as a result of diffusion. It has been shown that the copper transport along Si(111) surface goes on according to a solid state spreading process, which is known as the unwinding carpet mechanism. The temperature dependence for the Cu diffusion coefficients D sub C sub u on the Si(111) surface is obtained and this dependence takes the form: D sub C sub u = 10 sup 4 exp(-1.9/kT) cm sup 2 /s

  16. Ion Segregation and Deliquescence of Alkali Halide Nanocrystals on SiO2

    Energy Technology Data Exchange (ETDEWEB)

    Arima, Kenta; Jiang, Peng; Lin, Deng-Sung; Verdaguer, Albert; Salmeron, Miquel

    2009-08-11

    The adsorption of water on alkali halide (KBr, KCl, KF, NaCl) nanocrystals on SiO{sub 2} and their deliquescence was investigated as a function of relative humidity (RH) from 8% to near saturation by scanning polarization force microscopy. At low humidity, water adsorption solvates ions at the surface of the crystals and increases their mobility. This results in a large increase in the dielectric constant, which is manifested in an increase in the electrostatic force and in an increase in the apparent height of the nanocrystals. Above 58% RH, the diffusion of ions leads to Ostwald ripening, where larger nanocrystals grow at the expense of the smaller ones. At the deliquescence point, droplets were formed. For KBr, KCl, and NaCl, the droplets exhibit a negative surface potential relative to the surrounding region, which is indicative of the preferential segregation of anions to the air/solution interface.

  17. Probing surface magnetism with ion beams

    International Nuclear Information System (INIS)

    Winter, H.

    2007-01-01

    Ion beams can be used to probe magnetic properties of surfaces by a variety of different methods. Important features of these methods are related to trajectories of atomic projectiles scattered from the surface of a solid target and to the electronic interaction mechanisms in the surface region. Both items provide under specific conditions a high sensitivity for the detection of magnetic properties in the region at the topmost layer of surface atoms. This holds in particular for scattering under planar surface channeling conditions, where under grazing impact atoms or ions are reflected specularly from the surface without penetration into the subsurface region. Two different types of methods are employed based on the detection of the spin polarization of emitted or captured electrons and on spin blocking effects for capture into atomic terms. These techniques allow one to probe the long range and short range magnetic order in the surface region

  18. Design and application of ion-implanted polySi passivating contacts for interdigitated back contact c-Si solar cells

    International Nuclear Information System (INIS)

    Yang, Guangtao; Ingenito, Andrea; Hameren, Nienke van; Isabella, Olindo; Zeman, Miro

    2016-01-01

    Ion-implanted passivating contacts based on poly-crystalline silicon (polySi) are enabled by tunneling oxide, optimized, and used to fabricate interdigitated back contact (IBC) solar cells. Both n-type (phosphorous doped) and p-type (boron doped) passivating contacts are fabricated by ion-implantation of intrinsic polySi layers deposited via low-pressure chemical vapor deposition and subsequently annealed. The impact of doping profile on the passivation quality of the polySi doped contacts is studied for both polarities. It was found that an excellent surface passivation could be obtained by confining as much as possible the implanted-and-activated dopants within the polySi layers. The doping profile in the polySi was controlled by modifying the polySi thickness, the energy and dose of ion-implantation, and the temperature and time of annealing. An implied open-circuit voltage of 721 mV for n-type and 692 mV for p-type passivating contacts was achieved. Besides the high passivating quality, the developed passivating contacts exhibit reasonable high conductivity (R sh n-type  = 95 Ω/□ and R sh p-type  = 120 Ω/□). An efficiency of 19.2% (V oc  = 673 mV, J sc  = 38.0 mA/cm 2 , FF = 75.2%, and pseudo-FF = 83.2%) was achieved on a front-textured IBC solar cell with polySi passivating contacts as both back surface field and emitter. By improving the front-side passivation, a V OC of 696 mV was also measured

  19. Thermoluminescence of ion-implanted SiO2

    International Nuclear Information System (INIS)

    Arnold, G.W.

    1976-01-01

    Thermoluminescence (TL) has been measured from room temperature to 500 0 C for ion-implanted fused silica glasses, crystalline synthetic quartz and rf-sputtered SiO 2 films. Measurements of the TL spectra for widely varying values of electronic and atomic energy depositions, along with the known impurity concentrations of the various systems, has allowed some of the TL features to be identified. In particular, (1) a TL peak at 150 0 C in fused silica has been identified with defects formed by structural modification, (2) a 330 0 C peak in crystalline quartz and relatively impure fused silica is tentatively assigned to a center involving Al, (3) a 100 0 C peak, common to all silicas may be related to oxygen vacancies, and (4) an approximately 200 0 C peak may be the analog of the 245 nm impurity absorption band seen in some fused silica glasses

  20. Radioactive Ions for Surface Characterization

    CERN Multimedia

    2002-01-01

    The collaboration has completed a set of pilot experiments with the aim to develop techniques for using radioactive nuclei in surface physics. The first result was a method for thermal deposition of isolated atoms (Cd, In, Rb) on clean metallic surfaces. \\\\ \\\\ Then the diffusion history of deposited Cd and In atoms on two model surfaces, Mo(110) and Pd(111), was followed through the electric field gradients (efg) acting at the probe nuclei as measured with the Perturbed Angular Correlation technique. For Mo(110) a rather simple history of the adatoms was inferred from the experiments: Atoms initially landing at terrace sites diffuse from there to ledges and then to kinks, defects always present at real surfaces. The next stage is desorption from the surface. For Pd a scenario that goes still further was found. Following the kink stage the adatoms get incorporated into ledges and finally into the top surface layer. For all these five sites the efg's could be measured.\\\\ \\\\ In preparation for a further series o...

  1. Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

    DEFF Research Database (Denmark)

    Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

    2014-01-01

    Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects.......Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects....

  2. Irradiation Effect of Argon Ion on Interfacial Structure Fe(2nm/Si(tsi=0.5-2 nm Multilayer thin Film

    Directory of Open Access Journals (Sweden)

    S. Purwanto

    2010-04-01

    Full Text Available Investigation includes formation of interfacial structure of Fe(2nm/Si(tSi= 0.5-2 nm multilayer thin film and the behavior of antiferromagnetic coupling between Fe layers due to Argon ion irradiation was investigated. [Fe(2nm/Si]30 multilayers (MLs with a thickness of Si spacer 0.5 - 2 nanometer were prepared on n-type (100 Si substrate by the helicon plasma sputtering method. Irradiation were performed using 400keV Ar ion to investigate the behavior of magnetic properties of the Fe/Si MLs. The magnetization measurements of Fe/Si MLs after 400keV Ar ion irradiation show the degradation of antiferromagnetic behavior of Fe layers depend on the ion doses. The Magnetoresistance (MR measurements using by Four Point Probe (FPP method also confirm that MR ratio decrease after ion irradiation. X-ray diffraction (XRD patterns indicate that the intensity of a satellite peak induced by a superlattice structure does not change within the range of ion dose. These results imply that the surface of interface structures after ion irradiation become rough although the layer structures are maintained. Therefore, it is considered that the MR properties of Fe/Si MLs also are due to the metallic superlattice structures such as Fe/Cr and Co/Cu MLs.

  3. Effect of hydrogen ion beam treatment on Si nanocrystal/SiO2 superlattice-based memory devices

    International Nuclear Information System (INIS)

    Fu, Sheng-Wen; Chen, Hui-Ju; Wu, Hsuan-Ta; Chuang, Bing-Ru; Shih, Chuan-Feng

    2016-01-01

    Graphical abstract: - Highlights: • Memory window and retention properties are improved employing HIBAS technique. • The O/Si ratio and radiative recombination are changed by HIBAS. • Memory properties are affected not only by Si NCs and O/Si ratio but also the RDCs. • The mechanism of hydrogen ion beam alters the memory properties is investigated. - Abstract: This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO 2 superlattice-based memory devices with an improved memory window and retention properties. The SiO 2 and SRO superlattices are deposited by reactive sputtering. Specifically, the hydrogen ion beam is used to irradiate the SRO layer immediately after its deposition in the vacuum chamber. The use of the hydrogen ion beam was determined to increase oxygen content and the density of the Si nanocrystals. The memory window increased from 16 to 25.6 V, and the leakage current decreased significantly by two orders, to under ±20 V, for the hydrogen ion beam-prepared devices. This study investigates the mechanism into how hydrogen ion beam treatment alters SRO films and influences memory properties.

  4. The effects of synchrotron x-rays on the local structure and the recrystallization of ion-damaged Si

    Energy Technology Data Exchange (ETDEWEB)

    Kin Man Yu; Lei Wang; Walukiewicz, W. [Lawrence Berkeley National Lab., CA (United States)

    1997-04-01

    Ion implantation is used extensively as a routine, controllable and reproducible doping technique for semiconductor processing. In Si, the amorphization by ion beams as well as the subsequent thermally induced solid phase epitaxy (SPE) and the electrical activation of the implanted dopants have been studied extensively. It has been well established that the SPE of amorphous Si ({alpha}-Si) layers created by implantation is initiated by thermal annealing at temperatures {ge} 400{degrees}C and proceeds in a planar fashion. The kinetics of the SPE process was found to follow an Arrhenius equation with an activation energy of 2.7eV. Various models have been proposed to explain the SPE process. In most cases, the mechanism leading to SPE is expected to involve the formation and/or motion of defects at or near the amorphous/crystalline interface. In this work the authors explore the effects of an intense x-ray beam generated by a synchrotron source on the SPE process of ion amorphized Si layers. A layer of amorphous Si was created near the surface of a single crystal Si to a depth of {approximately}2000{Angstrom} by 180keV Zn ion implantation. The sample was then irradiated at beam line 10-3 (microprobe beamline) at the Advance Light Source (ALS) for 5-16 hours. For 5-16 hours irradiation, the total photons absorbed by the {alpha}-Si film was {approximately}0.3-1 photon/Si atom (for 4keV photons). The authors find that in ion amorphized Si layers, although the ion dose is well above the amorphization threshold, small crystallites are still present. The absorption of x-ray by the Si atoms provides enough energy to disperse the small crystallites in the amorphous Si, reducing the number of interfacial defects as well as locally re-arrange the atoms to form a homogeneously amorphous layer with close to four-fold coordinated environment. This rearrangement in local structure of the {alpha}-Si results in nearly a defect-free crystal after SPE.

  5. Nonlinear Amplitude Evolution During Spontaneous Patterning of Ion-Bombarded Si(001)

    Energy Technology Data Exchange (ETDEWEB)

    Chason, Eric; Erlebacher, Jonah, Aziz, Michael J.; Floro, Jerold A.; Sinclair, Michael B.

    1999-05-05

    The time evolution of the amplitude of periodic nanoscale ripple patterns formed on Ar+ sputtered Si(OOl ) surfaces was examined using a recently developed in situ spectroscopic technique. At sufficiently long times, we find that the amplitude does not continue to grow exponentially as predicted by the standard Bradley-Harper sputter rippling model. In accounting for this discrepancy, we rule out effects related to the concentration of mobile species, high surface curvature, surface energy anisotropy, and ion-surface interactions. We observe that for all wavelengths the amplitude ceases to grow when the width of the topmost terrace of the ripples is reduced to approximately 25 nm. This observation suggests that a short circuit relaxation mechanism limits amplitude . growth. A strategy for influencing the ultimate ripple amplitude is discussed.

  6. Nonlinear amplitude evolution during spontaneous patterning of ion-bombarded Si(001)

    International Nuclear Information System (INIS)

    Erlebacher, Jonah; Aziz, Michael J.; Chason, Eric; Sinclair, Michael B.; Floro, Jerrold A.

    2000-01-01

    The time evolution of the amplitude of periodic nanoscale ripple patterns formed on Ar + sputtered Si(001) surfaces was examined using a recently developed in situ spectroscopic technique. At sufficiently long times, we find that the amplitude does not continue to grow exponentially as predicted by the standard Bradley-Harper sputter rippling model. In accounting for this discrepancy, we rule out effects related to the concentration of mobile species, high surface curvature, surface energy anisotropy, and ion-surface interactions. We observe that for all wavelengths the amplitude ceases to grow when the width of the topmost terrace of the ripples is reduced to approximately 25 nm. This observation suggests that a short circuit relaxation mechanism limits amplitude growth. A strategy for influencing the ultimate ripple amplitude is discussed. (c) 2000 American Vacuum Society

  7. Nonlinear Amplitude Evolution During Spontaneous Patterning of Ion-Bombarded Si(001)

    International Nuclear Information System (INIS)

    Chason, Eric; Erlebacher, Jonah; Aziz, Michael J.; Floro, Jerold A.; Sinclair, Michael B.

    1999-01-01

    The time evolution of the amplitude of periodic nanoscale ripple patterns formed on Ar+ sputtered Si(OOl ) surfaces was examined using a recently developed in situ spectroscopic technique. At sufficiently long times, we find that the amplitude does not continue to grow exponentially as predicted by the standard Bradley-Harper sputter rippling model. In accounting for this discrepancy, we rule out effects related to the concentration of mobile species, high surface curvature, surface energy anisotropy, and ion-surface interactions. We observe that for all wavelengths the amplitude ceases to grow when the width of the topmost terrace of the ripples is reduced to approximately 25 nm. This observation suggests that a short circuit relaxation mechanism limits amplitude . growth. A strategy for influencing the ultimate ripple amplitude is discussed

  8. Simulation of surface evolution during ion bombardment

    International Nuclear Information System (INIS)

    Katardjiev, I.V.

    1988-01-01

    Some theoretical aspects of surface topography evolution during ion beam erosion are discussed. In particular, the theory of characteristics is considered in some detail and its limitations pointed out. Further theoretical development based on the Huygens principle of wave propagation is discussed also with respect to numerical evaluation of surface evolution. A new numerical algorithm based on the contemporary theoretical concepts of surface and edge propagation is proposed and compared with existing numerical models and theoretical expectations

  9. Selective Binding, Self-Assembly and Nanopatterning of the Creutz-Taube Ion on Surfaces

    OpenAIRE

    Wang, Yuliang; Lieberman, Marya; Hang, Qingling; Bernstein, Gary

    2009-01-01

    The surface attachment properties of the Creutz-Taube ion, i.e., [(NH3)5Ru(pyrazine)Ru(NH3)5]5+, on both hydrophilic and hydrophobic types of surfaces were investigated using X-ray photoelectron spectroscopy (XPS). The results indicated that the Creutz-Taube ions only bound to hydrophilic surfaces, such as SiO2 and –OH terminated organic SAMs on gold substrates. No attachment of the ions on hydrophobic surfaces such as –CH3 terminated organic SAMs and poly(methylmethacrylate) (PMMA) thin film...

  10. Dynamics of Defects and Dopants in Complex Systems: Si and Oxide Surfaces and Interfaces

    Science.gov (United States)

    Kirichenko, Taras; Yu, Decai; Banarjee, Sanjay; Hwang, Gyeong

    2004-10-01

    Fabrication of forthcoming nanometer scale electronic devices faces many difficulties including formation of extremely shallow and highly doped junctions. At present, ultra-low-energy ion implantation followed by high-temperature thermal annealing is most widely used to fabricate such ultra-shallow junctions. In the process, a great challenge lies in achieving precise control of redistribution and electrical activation of dopant impurities. Native defects (such as vacancies and interstitials) generated during implantation are known to be mainly responsible for the TED and also influence significantly the electrical activation/deactivation. Defect-dopant dynamics is rather well understood in crystalline Si and SiO2. However, little is known about their diffusion and annihilation (or precipitation) at the surfaces and interfaces, despite its growing importance in determining junction profiles as device dimensions get smaller. In this talk, we will present our density functional theory calculation results on the atomic and electronic structure and dynamical behavior of native defects and dopant-defect complexes in disordered/strained Si and oxide systems, such as i) clean and absorbent-modified Si(100) surface and subsurface layers, ii) amorphous-crystalline Si interfaces and iii) amorphous SiO2/Si interfaces. The fundamental understanding and data is essential in developing a comprehensive kinetic model for junction formation, which would contribute greatly in improving current process technologies.

  11. Secondary ion mass spectrometric signal enhancement of phosphatidylcholine dioleoyl on enlarged nanoparticles surface

    Science.gov (United States)

    Gulin, A.; Mochalova, M.; Denisov, N.; Nadtochenko, V.

    2014-10-01

    A silicon wafer surface coverage of nanoparticles (NPs) can enhance the L-α-phosphatidylcholine dioleoyl (DOPC) signal intensity in time-of-flight secondary ion mass spectrometry (TOF-SIMS). A ToF-SIMS mass spectrometer was used with a pulsed primary beam of focused 30 keV Bi3+ ions. The signal enhancing effect has been studied for metallic (Ag, Au, Pb), semiconductor (TiO2), dielectric (SiO2) and hybrid (Au/TiO2NPs, core-shell Au/SiO2) nanoparticles. Ag NPs can attenuate secondary ions signal, whereas all other studied NPs show the signal enhancement. The emission of DOPC lipid secondary ions immobilized on core-shell Au/SiO2NPs was enhanced up to 42 times. This technique is a simple preparatory method enabling an overall increase in molecular lipid ions.

  12. Selective Binding, Self-Assembly and Nanopatterning of the Creutz-Taube Ion on Surfaces

    Directory of Open Access Journals (Sweden)

    Qingling Hang

    2009-02-01

    Full Text Available The surface attachment properties of the Creutz-Taube ion, i.e., [(NH35Ru(pyrazineRu(NH35]5+, on both hydrophilic and hydrophobic types of surfaces were investigated using X-ray photoelectron spectroscopy (XPS. The results indicated that the Creutz-Taube ions only bound to hydrophilic surfaces, such as SiO2 and –OH terminated organic SAMs on gold substrates. No attachment of the ions on hydrophobic surfaces such as –CH3 terminated organic SAMs and poly(methylmethacrylate (PMMA thin films covered gold or SiO2 substrates was observed. Further ellipsometric, atomic force microscopy (AFM and time-dependent XPS studies suggested that the attached cations could form an inorganic analog of the self-assembled monolayer on SiO2 substrate with a “lying-down” orientation. The strong electrostatic interaction between the highly charged cations and the anionic SiO2 surface was believed to account for these observations. Based on its selective binding property, patterning of wide (~200 nm and narrow (~35 nm lines of the Creutz-Taube ions on SiO2 surface were demonstrated through PMMA electron resist masks written by electron beam lithography (EBL.

  13. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Ozcan, Ahmet S., E-mail: asozcan@us.ibm.com [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Lavoie, Christian; Jordan-Sweet, Jean [IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States); Alptekin, Emre; Zhu, Frank [IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533 (United States); Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M. [TEL Epion Inc., 900 Middlesex Turnpike, Bldg. 6, Billerica, Massachusetts 01821 (United States)

    2016-04-21

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  14. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    International Nuclear Information System (INIS)

    Ozcan, Ahmet S.; Lavoie, Christian; Jordan-Sweet, Jean; Alptekin, Emre; Zhu, Frank; Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M.

    2016-01-01

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  15. Preparation of thin Si:H films in an inductively coupled plasma reactor and analysis of their surface roughness

    International Nuclear Information System (INIS)

    Zhao Wenfeng; Chen Junfang; Meng Ran; Wang Yang; Wang Hui; Guo Chaofeng; Xue Yongqi

    2010-01-01

    An important concern in the deposition of Si:H films is to obtain smooth surfaces. Herein, we deposit the thin Si:H films using Ar-diluted SiH 4 as feedstock gas in an inductively coupled plasma reactor. And we carry a real-time monitor on the deposition process by using optical emission spectrum technology in the vicinity of substrate and diagnose the Ar plasma radial distribution by Langmuir probe. Surface detecting by AFM and surface profilometry in large scale shows that the thin Si:H films have small surface roughness. Distributions of both the ion density and the electron temperature are homogeneous at h = 0.5 cm. Based on these experimental results, it can be proposed inductively coupled plasma reactor is fit to deposit the thin film in large scale. Also, Ar can affect the reaction process and improve the thin Si:H films characteristics.

  16. Amorphous Ge quantum dots embedded in SiO2 formed by low energy ion implantation

    International Nuclear Information System (INIS)

    Zhao, J. P.; Huang, D. X.; Jacobson, A. J.; Chen, Z. Y.; Makarenkov, B.; Chu, W. K.; Bahrim, B.; Rabalais, J. W.

    2008-01-01

    Under ultrahigh vacuum conditions, extremely small Ge nanodots embedded in SiO 2 , i.e., Ge-SiO 2 quantum dot composites, have been formed by ion implantation of 74 Ge + isotope into (0001) Z-cut quartz at a low kinetic energy of 9 keV using varying implantation temperatures. Transmission electron microscopy (TEM) images and micro-Raman scattering show that amorphous Ge nanodots are formed at all temperatures. The formation of amorphous Ge nanodots is different from reported crystalline Ge nanodot formation by high energy ion implantation followed by a necessary high temperature annealing process. At room temperature, a confined spatial distribution of the amorphous Ge nanodots can be obtained. Ge inward diffusion was found to be significantly enhanced by a synergetic effect of high implantation temperature and preferential sputtering of surface oxygen, which induced a much wider and deeper Ge nanodot distribution at elevated implantation temperature. The bimodal size distribution that is often observed in high energy implantation was not observed in the present study. Cross-sectional TEM observation and the depth profile of Ge atoms in SiO 2 obtained from x-ray photoelectron spectra revealed a critical Ge concentration for observable amorphous nanodot formation. The mechanism of formation of amorphous Ge nanodots and the change in spatial distribution with implantation temperature are discussed

  17. Surface analysis with low energy ion scattering

    International Nuclear Information System (INIS)

    Taglauer, E.; Heiland, W.

    1976-01-01

    Principles and applications of low energy ion scattering for surface analysis are presented. Basic features are the binary collision concept, the scattering cross-sections and the ion neutralization process. The potential and the limitations of the method are outlined. Some pertinent experimental aspects are considered. In a number of examples the performance of the technique is demonstrated for qualitative composition analysis and for studies of surface structures. Finally a few comparisons are made with other techniques, such as AES, LEED, or SIMS. (orig.) [de

  18. On the wettability diversity of C/SiC surface: Comparison of the ground C/SiC surface and ablated C/SiC surface from three aspects

    Science.gov (United States)

    Wu, M. L.; Ren, C. Z.; Xu, H. Z.

    2016-11-01

    The coefficient of thermal conductivity was influenced by the wetting state of material. The wetting state usually depends on the surface wettability. C/SiC is a promising ceramic composites with multi-components. The wettability of C/SiC composites is hard to resort to the classical wetting theory directly. So far, few investigations focused on C/SiC surface wettability diversity after different material removal processes. In this investigation, comparative studies of surface wettability of ground C/SiC surface and laser-ablated C/SiC surface were carried out through apparent contact angle (APCA) measurements. The results showed that water droplets easily reached stable state on ground C/SiC surface; while the water droplets rappidly penetrated into the laser-ablated C/SiC surface. In order to find out the reason for wettability distinctions between the ground C/SiC surface and the laser-ablated C/SiC surface, comparative studies on the surface micro-structure, surface C-O-Si distribution, and surface C-O-Si weight percentage were carried out. The results showed that (1) A large number of micro cracks in the fuzzy pattern layer over laser-ablated C/SiC surfaces easily destoried the surface tension of water droplets, while only a few cracks existed over the ground C/SiC surfaces. (2) Chemical components (C, O, Si) were non-uniformly distributed on ground C/SiC surfaces, while the chemical components (C, O, Si) were uniformly distributed on laser-ablated C/SiC surfaces. (3) The carbon weight percentage on ground C/SiC surfaces were higher than that on laser-ablated C/SiC surfaces. All these made an essential contribution to the surface wettability diversity of C/SiC surface. Although more investigations about the quantitative influence of surface topography and surface chemical composition on composites wettability are still needed, the conslusion can be used in application: the wettability of C/SiC surface can be controlled by different material removal process

  19. Ion-step method for surface potential sensing of silicon nanowires

    NARCIS (Netherlands)

    Chen, S.; van Nieuwkasteele, Jan William; van den Berg, Albert; Eijkel, Jan C.T.

    2016-01-01

    This paper presents a novel stimulus-response method for surface potential sensing of silicon nanowire (Si NW) field-effect transistors. When an "ion-step" from low to high ionic strength is given as a stimulus to the gate oxide surface, an increase of double layer capacitance is therefore expected.

  20. Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

    International Nuclear Information System (INIS)

    Glasko, J.M.; Elliman, R.G.; Zou, J.; Cockayne, D.J.H.; Fitz Gerald, J.D.

    1998-01-01

    High energy (1 MeV), ion irradiation of GeSi/Si strained layers at elevated temperatures can cause strain relaxation. In this study, the effect of subsequent thermal annealing was investigated. Three distinct annealing stages were identified and correlated with the evolution of the defect microstructure. In the temperature range from 350 to 600 deg C, a gradual recovery of strain is observed. This is believed to result from the annealing of small defect clusters and the growth of voids. The voids are visible at annealing temperatures in excess of 600 deg C, consistent with an excess vacancy concentration in the irradiated alloy layer. The 600 to 750 deg C range is marked by pronounced maximal recovery of strain, and is correlated with the dissolution of faulted loops in the substrate. At temperatures in the range 750-1000 deg C, strain relaxation is observed and is correlated with the growth of intrinsic dislocations within the alloy layer. These dislocations nucleate at the alloy-substrate interface and grow within the alloy layer, towards the surface. (authors)

  1. Mössbauer spectroscopy study of surfactant sputtering induced Fe silicide formation on a Si surface

    Energy Technology Data Exchange (ETDEWEB)

    Beckmann, C.; Zhang, K. [2nd Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Hofsäss, H., E-mail: hans.hofsaess@phys.uni-goettingen.de [2nd Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Brüsewitz, C.; Vetter, U. [2nd Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Bharuth-Ram, K. [Physics Department, Durban University of Technology, Durban 4001 (South Africa)

    2015-12-01

    Highlights: • We study the formation of self-organized nanoscale dot and ripple patterns on Si. • Patterns are created by keV noble gas ion irradiation and simultaneous {sup 57}Fe co-deposition. • Ion-induced phase separation and the formation of a-FeSi{sub 2} is identified as relevant process. - Abstract: The formation of Fe silicides in surface ripple patterns, generated by erosion of a Si surface with keV Ar and Xe ions and simultaneous co-deposition of Fe, was investigated with conversion electron Mössbauer spectroscopy, atomic force microscopy and Rutherford backscattering spectrometry. For the dot and ripple patterns studied, we find an average Fe concentration in the irradiated layer between 6 and 25 at.%. The Mössbauer spectra clearly show evidence of the formation of Fe disilicides with Fe content close to 33 at.%, but very little evidence of the formation of metallic Fe particles. The results support the process of ion-induced phase separation toward an amorphous Fe disilicide phase as pattern generation mechanism. The observed amorphous phase is in agreement with thermodynamic calculations of amorphous Fe silicides.

  2. Depth profile of In and As in Si measured by RBS with He and C ions

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Q.; Fang, Z. [Newcastle Univ., NSW (Australia). Dept. of Physics; Ophel, T.R. [Australian National Univ., Canberra, ACT (Australia). Dept. of Nuclear Physics

    1993-12-31

    The depth profile of As and In implanted into Si have been measured by RBS (Rutherford Backscattering Spectrometry) with 2 MeV He ions and 6 MeV C ions. Advantages of enhanced depth and mass resolution with C ions have been demonstrated over the conventional He RBS. More reliable information for the depth profile of In and As in Si has been obtained. 12 refs., 3 figs.

  3. Silver-coated Si nanograss as highly sensitive surface-enhanced Raman spectroscopy substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Jing; Kuo, Huei Pei; Hu, Min; Li, Zhiyong; Williams, R.S. [Hewlett-Packard Laboratories, Information and Quantum Systems Laboratory, Palo Alto, CA (United States); Ou, Fung Suong [Hewlett-Packard Laboratories, Information and Quantum Systems Laboratory, Palo Alto, CA (United States); Rice University, Department of Applied Physics, Houston, TX (United States); Stickle, William F. [Hewlett-Packard Company, Advanced Diagnostic Lab, Corvallis, OR (United States)

    2009-09-15

    We created novel surface-enhanced Raman spectroscopy (SERS) substrates by metalization (Ag) of Si nanograss prepared by a Bosch process which involves deep reactive ion etching of single crystalline silicon. No template or lithography was needed for making the Si nanograss, thus providing a simple and inexpensive method to achieve highly sensitive large-area SERS substrates. The dependence of the SERS effect on the thickness of the metal deposition and on the surface morphology and topology of the substrate prior to metal deposition was studied in order to optimize the SERS signals. We observed that the Ag-coated Si nanograss can achieve uniform SERS enhancement over large area ({proportional_to}1 cm x 1 cm) with an average EF (enhancement factor) of 4.2 x 10{sup 8} for 4-mercaptophenol probe molecules. (orig.)

  4. Computer modeling and electron microscopy of silicon surfaces irradiated by cluster ion impacts

    CERN Document Server

    Insepov, Z; Santeufemio, C; Jones, K S; Yamada, I

    2003-01-01

    A hybrid molecular dynamics model has been applied for modeling impacts of Ar and decaborane clusters, with energies ranging from 25 to 1500 eV/atom, impacting Si surfaces. Crater formation, sputtering, and the shapes of craters and rims were studied. Our simulation predicts that on a Si(1 0 0), craters are nearly triangular in cross-section, with the facets directed along the close-packed (1 1 1) planes. The Si(1 0 0) craters exhibit four fold symmetry. The craters on Si(1 1 1) surface are well rounded in cross-section and the top-view shows a complicated six fold or triangular image. The simulation results for individual gas cluster impacts were compared with experiments at low dose (10 sup 1 sup 0 ions/cm sup 2 charge fluence) for Ar impacts into Si(1 0 0) and Si(1 1 1) substrate surfaces. Atomic force microscopy and cross-sectional high-resolution transmission electron microscope imaging of individual gas cluster ion impacts into Si(1 0 0) and Si(1 1 1) substrate surfaces revealed faceting properties of t...

  5. Investigations of Si Thin Films as Anode of Lithium-Ion Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Qingliu [Department of Chemical; Shi, Bing; Bareño, Javier; Liu, Yuzi; Maroni, Victor A.; Zhai, Dengyun; Dees, Dennis W.; Lu, Wenquan

    2018-01-22

    Amorphous silicon thin films having various thicknesses were investigated as a negative electrode material for lithium-ion batteries. Electrochemical characterization of the 20 nm thick thin silicon film revealed a very low first cycle Coulombic efficiency, which can be attributed to the silicon oxide layer formed on both the surface of the as-deposited Si thin film and the interface between the Si and the substrate. Among the investigated films, the 100 nm Si thin film demonstrated the best performance in terms of first cycle efficiency and cycle life. Observations from scanning electron microscopy demonstrated that the generation of cracks was inevitable in the cycled Si thin films, even as the thickness of the film was as little as 20 nm, which was not predicted by previous modeling work. However, the cycling performance of the 20 and 100 nm silicon thin films was not detrimentally affected by these cracks. The poor capacity retention of the 1 mu m silicon thin film was attributed to the delamination.

  6. Modification of wetting properties of SiOx surfaces by Ar implantation

    International Nuclear Information System (INIS)

    Chasse, M.; Ross, G.G.

    2002-01-01

    The aim of this experiment is to better understand the mechanism leading to the modification of the wetting properties of insulating (quartz) and non-insulating (Si) surfaces by ion and atom implantation. Coupons of quartz and silicon (with its native oxide layer) have been irradiated by means of 3 keV Ar ions and atoms with a fluence of 1.8x10 16 Ar/cm 2 . Some exposures to Ar ions have been performed under oxygen partial pressure (∼5x10 -5 Torr). The samples have been characterized before and after implantation by means of contact angle hysteresis measurements, Rutherford backscattering spectroscopy (RBS) and angle resolved X-ray photoelectron spectroscopy (ARXPS). Irradiation with argon ions or atoms has produced a more hydrophilic surface immediately after implantation. Ar depth profiling by means of RBS has shown that 4% of implanted (atoms and ions) Ar has been retained in quartz, while 13% and 21% of Ar has been retained in silicon after Ar implantation with and without oxygen partial pressure, respectively. However, no difference in the depth distribution has been measured. Characterization by means of ARXPS has shown a noticeable change in the composition of the quartz and silicon oxide surfaces (implantation of Si under an O 2 partial pressure producing a thicker oxide layer) which can explain the differences in the reported Ar retention. In general, the irradiation have removed a large portion of oxygen present in the pre-existing carbonaceous layer on the surface of the samples. The ion beam irradiation has been more efficient than atom beam to both, increase the wettability of the quartz surfaces and enhance the concentration of the carbonaceous layer in 'dispersed islands' on the surfaces

  7. Modification of wetting properties of SiO x surfaces by Ar implantation

    Science.gov (United States)

    Chassé, M.; Ross, G. G.

    2002-06-01

    The aim of this experiment is to better understand the mechanism leading to the modification of the wetting properties of insulating (quartz) and non-insulating (Si) surfaces by ion and atom implantation. Coupons of quartz and silicon (with its native oxide layer) have been irradiated by means of 3 keV Ar ions and atoms with a fluence of 1.8×10 16 Ar/cm 2. Some exposures to Ar ions have been performed under oxygen partial pressure (˜5×10 -5 Torr). The samples have been characterized before and after implantation by means of contact angle hysteresis measurements, Rutherford backscattering spectroscopy (RBS) and angle resolved X-ray photoelectron spectroscopy (ARXPS). Irradiation with argon ions or atoms has produced a more hydrophilic surface immediately after implantation. Ar depth profiling by means of RBS has shown that 4% of implanted (atoms and ions) Ar has been retained in quartz, while 13% and 21% of Ar has been retained in silicon after Ar implantation with and without oxygen partial pressure, respectively. However, no difference in the depth distribution has been measured. Characterization by means of ARXPS has shown a noticeable change in the composition of the quartz and silicon oxide surfaces (implantation of Si under an O 2 partial pressure producing a thicker oxide layer) which can explain the differences in the reported Ar retention. In general, the irradiation have removed a large portion of oxygen present in the pre-existing carbonaceous layer on the surface of the samples. The ion beam irradiation has been more efficient than atom beam to both, increase the wettability of the quartz surfaces and enhance the concentration of the carbonaceous layer in "dispersed islands" on the surfaces.

  8. Ion-induced surface modification of alloys

    International Nuclear Information System (INIS)

    Wiedersich, H.

    1983-11-01

    In addition to the accumulation of the implanted species, a considerable number of processes can affect the composition of an alloy in the surface region during ion bombardment. Collisions of energetic ions with atoms of the alloy induce local rearrangement of atoms by displacements, replacement sequences and by spontaneous migration and recombination of defects within cascades. Point defects form clusters, voids, dislocation loops and networks. Preferential sputtering of elements changes the composition of the surface. At temperatures sufficient for thermal migration of point defects, radiation-enhanced diffusion promotes alloy component redistribution within and beyond the damage layer. Fluxes of interstitials and vacancies toward the surface and into the interior of the target induce fluxes of alloying elements leading to depth-dependent compositional changes. Moreover, Gibbsian surface segregation may affect the preferential loss of alloy components by sputtering when the kinetics of equilibration of the surface composition becomes competitive with the sputtering rate. Temperature, time, current density and ion energy can be used to influence the individual processes contributing to compositional changes and, thus, produce a rich variety of composition profiles near surfaces. 42 references

  9. Impact of organic overlayers on a-Si:H/c-Si surface potential

    KAUST Repository

    Seif, Johannes P.

    2017-04-11

    Bilayers of intrinsic and doped hydrogenated amorphous silicon, deposited on crystalline silicon (c-Si) surfaces, simultaneously provide contact passivation and carrier collection in silicon heterojunction solar cells. Recently, we have shown that the presence of overlaying transparent conductive oxides can significantly affect the c-Si surface potential induced by these amorphous silicon stacks. Specifically, deposition on the hole-collecting bilayers can result in an undesired weakening of contact passivation, thereby lowering the achievable fill factor in a finished device. We test here a variety of organic semiconductors of different doping levels, overlaying hydrogenated amorphous silicon layers and silicon-based hole collectors, to mitigate this effect. We find that these materials enhance the c-Si surface potential, leading to increased implied fill factors. This opens opportunities for improved device performance.

  10. Composition and structure of Si-doped NiTi with a complex surface profile

    Science.gov (United States)

    Slabodchikov, Vladimir A.; Ovchinnikov, Stanislav V.; Kuznetsov, Vladimir M.

    2017-12-01

    The paper presents Auger spectroscopy and electron microscopy data on the elemental composition and structure of NiTi specimens with blind holes doped with Si through plasma immersion ion implantation. The data demonstrate how silicon is distributed through the depth of NiTi from its front surface and along the side of its hole. The upper layer formed upon treatment is shown to be amorphous, and its thickness measuring several tens of nanometers is about two times larger on the side surface of the hole than on the front surface.

  11. Room temperature wafer direct bonding of smooth Si surfaces recovered by Ne beam surface treatments

    Science.gov (United States)

    Kurashima, Yuichi; Maeda, Atsuhiko; Takagi, Hideki

    2013-06-01

    We examined the applicability of a Ne fast atom beam (FAB) to surface activated bonding of Si wafers at room temperature. With etching depth more than 1.5 nm, the bonding strength comparable to Si bulk strength was attained. Moreover, we found the improvement of the bonding strength by surface smoothing effect of the Ne FAB. Silicon surface roughness decreased from 0.40 to 0.17 nm rms by applying a Ne FAB of 30 nm etching depth. The bonding strength between surfaces recovered by Ne FAB surface smoothing was largely improved and finally became equivalent to Si bulk strength.

  12. Laser composite surfacing of stainless steel with SiC

    Science.gov (United States)

    Dutta Majumdar, J.; Chandra, B. Ramesh; Nath, A. K.; Manna, I.

    2006-07-01

    In the present study, an attempt has been made to improve wear resistance of AISI 304 stainless steel by laser composite surfacing with SiC. Laser processing has been carried out by pre-deposition of Fe + SiC powders (in the ratio of 85:15 and thickness of 100 m) on AISI 304 stainless steel substrate and subsequently, melting it using a 2 kW continuous wave CO2 laser. Following laser processing, a detailed characterization and evaluation of mechanical/electrochemical properties of the composite layer were undertaken to study the influence of laser processing on the characteristics and properties of the composite layer. Microstructure of the composite layer consisted of uniformly dispersed SiC particles in grain refined -Fe dendrites. Laser composite surfacing led to a significant improvement in microhardness and wear resistance as compared to as-received substrate. However, pitting corrosion property was marginally deteriorated due to laser composite surfacing.

  13. Interaction of nitrogen ions with beryllium surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Dobes, Katharina [Institute of Applied Physics, TU Wien, Association EURATOM ÖAW, Vienna (Austria); Köppen, Martin [Institute of Energy and Climate Research – Plasma Physics, Forschungszentrum Jülich GmbH, 52425 Jülich (Germany); Oberkofler, Martin [Max-Planck-Institut für Plasmaphysik, Boltzmannstraße 2, D-85748 Garching (Germany); Lungu, Cristian P.; Porosnicu, Corneliu [National Institute for Laser, Plasma, and Radiation Physics, Bucharest (Romania); Höschen, Till; Meisl, Gerd [Max-Planck-Institut für Plasmaphysik, Boltzmannstraße 2, D-85748 Garching (Germany); Linsmeier, Christian [Institute of Energy and Climate Research – Plasma Physics, Forschungszentrum Jülich GmbH, 52425 Jülich (Germany); Aumayr, Friedrich, E-mail: aumayr@iap.tuwien.ac.at [Institute of Applied Physics, TU Wien, Association EURATOM ÖAW, Vienna (Austria)

    2014-12-01

    The interaction of energetic nitrogen projectiles with a beryllium surface is studied using a highly sensitive quartz crystal microbalance technique. The overall mass change rate of the beryllium sample under N{sub 2}{sup +} ion impact at an ion energy of 5000 eV (i.e. 2500 eV per N) is investigated in situ and in real-time. A strong dependency of the observed mass change rate on the nitrogen fluence (at constant flux) is found and can be attributed to the formation of a nitrogen-containing mixed material layer within the ion penetration depth. The presented data elucidate the dynamics of the interaction process and the surface saturation with increasing nitrogen fluence in a unique way. Basically, distinct interaction regimes can be discriminated, which can be linked to the evolution of the surface composition upon nitrogen impact. Steady state surface conditions are obtained at a total cumulative nitrogen fluence of ∼80 × 10{sup 16} N atoms per cm{sup 2}. In dynamic equilibrium, the interaction is marked by continuous surface erosion. In this case, the observed total sputtering yield becomes independent from the applied nitrogen fluence and is of the order of 0.4 beryllium atoms per impinging nitrogen atom.

  14. Surface Coating Constraint Induced Self-Discharging of Silicon Nanoparticles as Anodes for Lithium Ion Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Langli; Zhao, Peng; Yang, Hui; Liu, Borui; Zhang, Jiguang; Cui, Yi; Yu, Guihua; Zhang, Sulin; Wang, Chong M.

    2015-10-01

    One of the key challenges of Si-based anodes for lithium ion batteries is the large volume change upon lithiation and delithiation, which commonly leads to electrochemo-mechanical degradation and subsequent fast capacity fading. Recent studies have shown that applying nanometer-thick coating layers on Si nanoparticle (SiNPs) enhances cyclability and capacity retention. However, it is far from clear how the coating layer function from the point of view of both surface chemistry and electrochemo-mechanical effect. Herein, we use in situ transmission electron microscopy to investigate the lithiation/delithiation kinetics of SiNPs coated with a conductive polymer, polypyrrole (PPy). We discovered that this coating layer can lead to “self-delithiation” or “self-discharging” at different stages of lithiation. We rationalized that the self-discharging is driven by the internal compressive stress generated inside the lithiated SiNPs due to the constraint effect of the coating layer. We also noticed that the critical size of lithiation-induced fracture of SiNPs is increased from ~ 150 nm for bare SiNPs to ~ 380 nm for the PPy-coated SiNPs, showing a mechanically protective role of the coating layer. These observations demonstrate both beneficial and detrimental roles of the surface coatings, shedding light on rational design of surface coatings for silicon to retain high-power and high capacity as anode for lithium ion batteries.

  15. Damage growth in Si during self-ion irradiation: A study of ion effects over an extended energy range

    International Nuclear Information System (INIS)

    Holland, O.W.; El-Ghor, M.K.; White, C.W.

    1989-01-01

    Damage nucleation/growth in single-crystal Si during ion irradiation is discussed. For MeV ions, the rate of growth as well as the damage morphology are shown to vary widely along the track of the ion. This is attributed to a change in the dominant, defect-related reactions as the ion penetrates the crystal. The nature of these reactions were elucidated by studying the interaction of MeV ions with different types of defects. The defects were introduced into the Si crystal prior to high-energy irradiation by self-ion implantation at a medium energy (100 keV). Varied damage morphologies were produced by implanting different ion fluences. Electron microscopy and ion-channeling measurements, in conjunction with annealing studies, were used to characterize the damage. Subtle changes in the predamage morphology are shown to result in markedly different responses to the high-energy irradiation, ranging from complete annealing of the damage to rapid growth. These divergent responses occur over a narrow range of dose (2--3 times 10 14 cm -2 ) of the medium-energy ions; this range also marks a transition in the growth behavior of the damage during the predamage implantation. A model is proposed which accounts for these observations and provides insight into ion-induced growth of amorphous layers in Si and the role of the amorphous/crystalline interface in this process. 15 refs, 9 figs

  16. Optical Properties of DLC:SiOx and Ag Multilayer Films: Surface Plasmon Resonance Effect

    Directory of Open Access Journals (Sweden)

    Arvydas ČIEGIS

    2016-11-01

    Full Text Available Diamond like carbon films containing silicon (DLC:SiOx and „conventional“ hydrogenated diamond like carbon (DLC films were deposited by direct ion beam using anode layer ion source. Ag films were grown by unbalanced direct current magnetron sputtering. Structure of DLC:SiOx films was investigated by Raman scattering spectroscopy. In the case of DLC:SiOx film deposited on Ag layer surface enhanced Raman scattering effect was observed. Optical properties of the different diamond like carbon and silver multilayers were studied. Annealing effects were investigated. Influence of the thickness of the diamond like carbon and Ag layers was investigated. Position of the plasmonic absorbance peak maximum of DLC:SiOx and multilayers in all cases was redshifted in comparison with “conventional” diamond like nanocomposite films containing silver nanoclusters. It was explained by increase of the Ag nanoparticle size and/or increased probability of the oxidation of the embedded Ag due to the higher amount of oxygen in DLC:SiOx film in comparison with “conventional” diamond like carbon film.DOI: http://dx.doi.org/10.5755/j01.ms.22.4.13194

  17. Nano-scale surface modification of materials with slow, highly charged ion beams

    International Nuclear Information System (INIS)

    Sakurai, M.; Tona, M.; Takahashi, S.; Watanabe, H.; Nakamura, N.; Yoshiyasu, N.; Yamada, C.; Ohtani, S.; Sakaue, H.A.; Kawase, Y.; Mitsumori, K.; Terui, T.; Mashiko, S.

    2007-01-01

    Some results on surface modification of Si and graphite with highly charged ions (HCIs) are presented. Modified surfaces were observed using scanning tunneling microscopy. Crater-like structure with a diameter in nm region is formed on a Si(1 1 1)-(7 x 7) surface by the incidence of a single HCI. The protrusion structure is formed on a highly oriented pyrolytic graphite surface on the other hand, and the structure becomes an active site for molecular adsorption. A new, intense HCI source and an experimental apparatus are under development in order to process and observe aligned nanostructures created by the impact of collimated HCI beam

  18. Morphology of ion-sputtered surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Makeev, Maxim A. E-mail: makeev@baton.phys.lsu.edu; Cuerno, Rodolfo; Barabasi, Albert-Laszlo

    2002-12-01

    We derive a stochastic nonlinear continuum equation to describe the morphological evolution of amorphous surfaces eroded by ion bombardment. Starting from Sigmund's theory of sputter erosion, we calculate the coefficients appearing in the continuum equation in terms of the physical parameters characterizing the sputtering process. We analyze the morphological features predicted by the continuum theory, comparing them with the experimentally reported morphologies. We show that for short time scales, where the effect of nonlinear terms is negligible, the continuum theory predicts ripple formation. We demonstrate that in addition to relaxation by thermal surface diffusion, the sputtering process can also contribute to the smoothing mechanisms shaping the surface morphology. We explicitly calculate an effective surface diffusion constant characterizing this smoothing effect and show that it is responsible for the low temperature ripple formation observed in various experiments. At long time scales the nonlinear terms dominate the evolution of the surface morphology. The nonlinear terms lead to the stabilization of the ripple wavelength and we show that, depending on the experimental parameters, such as angle of incidence and ion energy, different morphologies can be observed: asymptotically, sputter eroded surfaces could undergo kinetic roughening, or can display novel ordered structures with rotated ripples. Finally, we discuss in detail the existing experimental support for the proposed theory and uncover novel features of the surface morphology and evolution, that could be directly tested experimentally.

  19. Soft landing of polyatomic ions for selective modification of fluorinated self-assembled monolayer surfaces

    Science.gov (United States)

    Luo, Hai; Miller, Scott A.; Cooks, R. Graham; Pachuta, Steven J.

    1998-03-01

    Fluorinated self-assembled monolayer (F-SAM) surfaces comprised of CF3(CF2)7(CH2)2S- groups bound to a gold substrate were modified by deposition of mass-selected polyatomic ions at collision energies of ~10 eV. The modified material was characterized in situ by low-energy ion bombardment and by independent high-resolution time-of-flight secondary ion mass spectrometry (TOF-SIMS) analysis. Modification of F-SAM surfaces using hyperthermal (CH3)2SiNCS+ (m/z 116) and (CH3)3SiOSi(CH3)2 (m/z 147) projectile ion beams incorporated the intact projectile ions m/z 116 and mlz 147, respectively, which were released upon subsequent 60 eV [multiset union] sputtering. In addition to simple cases of soft landing of intact ions into a surface, two related soft landing channels, dissociative soft landing and reactive soft landing, are also identified. Surfaces modified by prolonged exposure to 35CICH2(CH3)2SiOSi(CH3)2+ (m/z 181) and its isotopic variant 37CICH2(CH3)2SiOSi(CH3)2+ (m/z 183), yielded only fragment ions derived from the projectile ions, primarily C3H10OSi235Cl+ (m/z 153) and C3H10OSi237Cl+ (m/z 155) upon [multiset union] sputtering as well as in the 15 keV Ga+TOF-SIMS spectra. In these cases, facile fragmentation occurs upon initial ion impact with the surface, the fragment ion being trapped at the interface in an overall process which is described as dissociative soft landing. Consistent with this, the fragment ions C3H10OSi235CI+ (m/z 153) and C3H10OSi237Cl+ (m/z 155) generated as such in the ion source were deposited without fragmentation and subsequently released intact by 60 eV [multiset union] sputtering. In the cases of some projectiles, such as protonated 2,4,6-trimethylpyridine, the sputtered ions released from the modified surface included chemically transformed products due to reaction of the projectile ion at the surface. Such reactive soft landing processes occur by ion/molecule reactions at the interface, although details of their mechanism and its

  20. Polymer-derived Ceramic SiCN-MoS2 Nanosheet Composite for Lithium Ion Battery Anodes

    Science.gov (United States)

    Bhandavat, Romil; Singh, Gurpreet

    2012-02-01

    We demonstrate synthesis of a novel SiCN-MoS2 nanosheet composite for use as Li-ion battery anode for high power applications. The nanosheet composite was prepared by thermal decomposition of polysilazane (SiCN precursor) on exfoliated MoS2 surfaces. The morphology and chemical structure was studied using a range of spectroscopy techniques that revealed a sidewall functionalization of exfoliated MoS2 by the polymeric precursor. The thermodynamic stability of SiCN-MoS2 nanosheets was also confirmed by thermo-gravimetric analysis (1000 degree C). Batteries assembled using MoS2-SiCN nanosheets as active anode material showed that lithium can be reversibly intercalated in the voltage range of 0-2.5 V with first cycle discharge capacity of 620 mAh/g at a current density of 100 mA/g.

  1. Fluorinated saccharides on the Si(0 0 1) surface

    International Nuclear Information System (INIS)

    Szwajca, Anna; Rapp, Magdalena; Bilska, Monika; Krzywiecki, Maciej; Koroniak, Henryk

    2013-01-01

    The attachment of saccharide molecules directly to silicon surface has been for the first time. Oxygen free silicon surface was functionalized with monosacharides thanks to UV irradiation in acetonitryl solution (254 nm). Selected derivatives of pentofuranose were protected at the C-1 and C-2 position. The remaining hydroxyl group at C-3 or C-5 was suitable for direct attachment to H-terminated Si(0 0 1) surface via Si-O-C bonds. The binding energy of the saccharide to the Si surface was investigated by quantum mechanical calculations method. The Parametric Method 5 (PM5) calculations confirmed that the formation of Si-O-C bonds was chemically possible. Synthesis of new fluorinated carbohydrates has been described. The resulting monolayers were characterized by Atomic Force Microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Attenuated Total Reflection (ATR) infrared spectroscopy. The effect of incorporating fluorine atom or CF 3 group into self-assembled monosaccharide monolayers was studied using a water contact angle measurements. The resulting surface wettability of different fluorinated components on one kind of planar substrate enables an answer which of derivative is required for the preparation of the hydrophobic monolayer.

  2. Formation and coarsening of near-surface Ga nanoparticles on SiN{sub x}

    Energy Technology Data Exchange (ETDEWEB)

    Canniff, J. C.; Jeon, S.; Huang, S.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2015-06-15

    We have investigated the formation and coarsening of near-surface Ga nanoparticles (NPs) in SiN{sub x} using Ga{sup +} focused-ion-beam-irradiation of SiN{sub x}, followed by rapid thermal annealing. For surfaces with minimal curvature, diffusive growth is apparent, leading to nearly close packed arrays with NP diameters as small as 3 nm and densities as high as ∼4 × 10{sup 12} cm{sup −2}. The diffusive flux increases with annealing temperature, leading to NP coarsening by Ostwald ripening. For surfaces with increased curvature, diffusion towards the valleys also increases during annealing, leading to Ga NP coalescence and a bi-modal distribution of NP sizes.

  3. Influence of the growth-surface on the incorporation of phosphorus in SiC

    International Nuclear Information System (INIS)

    Rauls, E.; Gerstmann, U.; Frauenheim, Th.

    2005-01-01

    Phosphorus is a common and desired n-type dopant of SiC, but it turned out that doping by diffusion or during growth is rarely successful. To avoid the efforts and the creation of damage if ion implantation is used instead, these techniques were, though, highly desirable. In this work, we have investigated theoretically the experimental observation that phosphorus obviously hardly diffuses into the material. Not the diffusivity of the dopant but its addiction to occupy a three-fold coordinated surface site are critical, together with the way the surface affects the bulk migration barriers of the dopants. Whereas the most common growth direction for 4H-SiC, the polar silicon terminated (0001) surface, seems to be least appropriate for the incorporation of phosphorus atoms, growth along the nonpolar [112-bar 0] provides a good possibility to achieve efficient P-doping during growth

  4. Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment

    International Nuclear Information System (INIS)

    Stevie, F.A.; Kahora, P.M.; Simons, D.S.; Chi, P.

    1988-01-01

    Changes in secondary ion yields of matrix and dopant species have been correlated with changes in surface topography during O + 2 bombardment of Si and GaAs. In Si, profiles were measured in (100) wafers at 6- and 8-keV impact energy. At 6 keV, a yield increase of about 70% occurred for Si + over a depth range of 2.5 to 3.5 μm, with changes in other species ranging from a decrease of ∼20% for Si + 3 to an increase of more than 25% for O + . The development of a rippled surface topography was observed in scanning electron micrographs over the same depth range. Similar effects occurred over a 3--5 μm depth range for 8-keV ions, and in (111) silicon at a depth of 3 to 4 μm for 6-keV ions. No differences were noted between p- and n-type silicon, or implanted and unimplanted silicon. In GaAs, profiles were measured in (100) wafers at 2.5-, 5.5-, and 8-keV impact energies. At 8 keV, a yield increase of about 70% was found for GaO + in the range 0.6--1.0 μm, with smaller changes for other matrix species. At 5.5 keV, similar effects were observed, but over a depth interval of 0.3 to 0.7 μm. No yield changes were detected at 2.5-keV impact energy. The yield changes at the higher energies were again correlated with the onset of changes in topography. No change in ion yield or surface topography was noted for Cs + bombardment of Si or GaAs. The topography and ion yield changes are affected by the angle of incidence and, for Si, the oxygen coverage. The results show that the practice of normalizing secondary ion mass spectrometry dopant profiles to a matrix signal must be modified for situations where matrix yield changes occur

  5. Raman and morphology visualization in epitaxial graphene on 4H-SiC by Nitrogen or Argon ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Jin-Hua, E-mail: zhaojinhuazjh@gmail.com [School of Science, Shandong Jianzhu University, Jinan 250101 (China); Qin, Xi-Feng; Wang, Feng-Xiang; Fu, Gang [School of Science, Shandong Jianzhu University, Jinan 250101 (China); Wang, Xue-Lin [School of Physics, Key Laboratory of Particle Physics and Particle Irradiation, Ministry of Education, and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China)

    2015-12-15

    Graphene is a one-atom-thick planar sheet of carbon atoms that are densely packed into a honeycomb crystal lattice and is attracting tremendous interest since being discovered in 2004. Epitaxial growth of graphene on silicon carbide (SiC) is an effective method to obtain high quality layers. In this work, the effects of irradiation on epitaxial SiC/graphene were studied. The samples were irradiated with Nitrogen and Argon ions at an energy of 200 keV and different fluence with 4 × 10{sup 12} ions/cm{sup 2} to 1 × 10{sup 13} ions/cm{sup 2}. The results of Raman measurements indicate that ion beam irradiation causes defects and disorder in the graphene crystal structure, and the level of defects increases with increasing ion fluence. Surface morphology images are obtained by atomic force microscope (AFM). This work is valuable for the potential application of epitaxial graphene on SiC in the field of optoelectronics devices.

  6. Dependence of surface smoothing, sputtering and etching phenomena on cluster ion dosage

    CERN Document Server

    Song, J H; Choi, W K

    2002-01-01

    The dependence of surface smoothing and sputtering phenomena of Si (1 0 0) solid surfaces irradiated by CO sub 2 cluster ions on cluster-ion dosage was investigated using an atomic force microscope. The flux and total ion dosage of impinging cluster ions at the acceleration voltage of 50 kV were fixed at 10 sup 9 ions/cm sup 2 s and were scanned from 5x10 sup 1 sup 0 to 5x10 sup 1 sup 3 ions/cm sup 2 , respectively. The density of hillocks induced by cluster ion impact was gradually increased with the dosage up to 5x10 sup 1 sup 1 ions/cm sup 2 , which caused that the irradiated surface became rough from 0.4 to 1.24 nm in root-mean-square roughness (sigma sub r sub m sub s). At the boundary of the ion dosage of 10 sup 1 sup 2 ions/cm sup 2 , the density of the induced hillocks was decreased and sigma sub r sub m sub s was about 1.21 nm, not being deteriorated further. At the dosage of 5x10 sup 1 sup 3 ions/cm sup 2 , the induced hillocks completely disappeared and the surface became very flat as much as sigma...

  7. Ion fractions in the scattering of hydrogen on silicon surfaces

    International Nuclear Information System (INIS)

    Garcia, Evelina A.; Gonzalez Pascual, C.; Bolcatto, P.G.; Passeggi, M.C.G.; Goldberg, E.C.

    2005-01-01

    We present a theoretical calculation of the resonant charge-exchange process occurring in H 0 scattering by Si(100)2 x 1 surfaces. In the atom-surface interacting system the core states of the surface atoms are included and the parameters of the Hamiltonian are calculated in an ab initio basis taking into account the extended features of the surface and the localized atom-atom interactions within a mean-field approximation. The density of states of the surface and sub-surface atoms are obtained from a molecular dynamic-density functional theory in the local density approximation. An elastic binary collision is assumed to fix the projectile trajectory, while the inelastic processes are determined by the interaction of the projectile atom with all the surface atoms 'seen' along its trajectory. The ion fractions are calculated by using the Green-Keldysh formalism to solve the time dependent process. The results, obtained as an average over different possibilities for the scattering center, reproduce the general trends of the experiment. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Ion beam mixing to produce disordered AlSi superconducting alloys

    International Nuclear Information System (INIS)

    Xi Xiaoxing; Ran Qize; Liu Jiarui; Guan Weiyan

    1987-01-01

    Multilayered Al/Si films were bombarded with Ar ions at LHe temperature and superconducting transition temperature Tsub(c) was measured in situ. The highest Tsub(c) thus obtained was 7.53 K. The systematic studies on samples with different compositions suggest that ion induced disorder might be the main reason for Tsub(c) enhancement in these AlSi alloys. (author)

  9. Analytical Chemistry of Surfaces: Part III. Ion Spectroscopy.

    Science.gov (United States)

    Hercules, David M.; Hercules, Shirley H.

    1984-01-01

    The fundamentals of two surface techniques--secondary-ion mass spectrometry (SIMS) and ion-scattering spectrometry (ISS)--are discussed. Examples of how these techniques have been applied to surface problems are provided. (JN)

  10. The influence of incidence angle on disorder production in Cl and Ar ion implanted Si

    International Nuclear Information System (INIS)

    Sukirno; Carter, G.

    1989-01-01

    Cl and Ar ions have been implanted, at 30 keV and at various incidence angles, into Si substrates maintained at room temperature during implantation. Implantation induced Si disorder was measured using Rutherford backscattering channelling. The effects upon disorder of various incidence angles were studied over a fluence range of 10 12 -6·10 15 ions·cm -2 . The results show that, at low fluences Cl and Ar ion implantations generate a bimodal disorder-depth profile, whilst at higher fluences measurements of amorphised layer thickness as a function of ion incidence angle allow values of the standard deviation of the disorder profile parallel and transverse to the ion beam direction for each ion to be obtained in good agreement with theoretical predictions. The disorder-fluence behaviour under these conditions is ion species independent. (author)

  11. Scanning ion deep level transient spectroscopy: II. Ion irradiated Au-Si Schottky junctions

    International Nuclear Information System (INIS)

    Laird, J S; Jagadish, C; Jamieson, D N; Legge, G J F

    2006-01-01

    Here we introduce a new technique called scanning ion deep level transient spectroscopy (SIDLTS) for the spatial analysis of electrically active defects in devices. In the first part of this paper, a simple theory behind SIDLTS was introduced and factors determining its sensitivity and resolution were discussed. In this paper, we demonstrate the technique on MeV boron implantation induced defects in an Au-Si Schottky junction. SIDLTS measurements are compared with capacitance DLTS measurements over the temperature range, 100-300 K. SIDLTS analyses indicate the presence of two levels, one of which was positively identified as the E c - 0.23 eV divacancy level. The high sensitivity of SIDLTS is verified and the advantages and limitations of the technique are discussed in light of non-exponential components in the charge transient response. Reasons for several undetected levels are also discussed

  12. Dimer-flipping-assisted diffusion on a Si(001) surface

    International Nuclear Information System (INIS)

    Zi, J.; Min, B. J.; Lu, Y.; Wang, C. Z.; Ho, K. M.

    2000-01-01

    The binding sites and diffusion pathways of Si adatoms on a c(4x2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car--Parrinello method. A new diffusion pathway along the trough edge driven by dimer flipping is found with a barrier of 0.74 eV, comparable to that of 0.68 eV along the top of the dimer rows

  13. Energy dissipation of highly charged ions interacting with solid surfaces; Energieeintrag langsamer hochgeladener Ionen in Festkoerperoberflaechen

    Energy Technology Data Exchange (ETDEWEB)

    Kost, D.

    2006-07-01

    Motivated by the incomplete scientific description of the relaxation of highly charged ions in front of solid surfaces and their energy balance, this thesis describes an advanced complementary study of determining deposited fractions and re-emitted fractions of the potential energy of highly charged ions. On one side, a calorimetric measurement setup is used to determine the retained potential energy and on the other side, energy resolved electron spectroscopy is used for measuring the reemitted energy due to secondary electron emission. In order to study the mechanism of energy retention in detail, materials with different electronic structures are investigated: Cu, n-Si, p-Si and SiO{sub 2}. In the case of calorimetry, a linear relationship between the deposited potential energy and the inner potential energy of the ions was determined. The total potential energy which stays in the solid remains almost constant at about (80 {+-} 10) %. Comparing the results of the Cu, n-Si and p-Si targets, no significant difference could be shown. Therefore we conclude that the difference in energy deposition between copper, n-doped Si and p-doped Si is below 10 %, which is significantly lower than using SiO{sub 2} targets. For this purpose, electron spectroscopy provides a complementary result. For Cu and Si surfaces, an almost linear increase of the re-emitted energy with increasing potential energy of the ion up to Ar{sup 7+} was also observed. The ratio of the re-emitted energy is about (10 {+-} 5) % of the total potential energy of the incoming ion, almost independent of the ion charge state. In contrast, an almost vanishing electron emission was observed for SiO{sub 2} and for charge states below q=7. For Ar{sup 8+} and Ar{sup 9+}, the electron emission increased due to the contribution of the projectile LMM Auger electrons and the re-emitted energy amounts up to 20 % for Cu and Si and around 10 % for SiO{sub 2}. These results are in good agreement with the calorimetric

  14. Reduction of Glass Surface Reflectance by Ion Beam Surface Modification

    Energy Technology Data Exchange (ETDEWEB)

    Mark Spitzer

    2011-03-11

    This is the final report for DOE contract DE-EE0000590. The purpose of this work was to determine the feasibility of the reduction of the reflection from the front of solar photovoltaic modules. Reflection accounts for a power loss of approximately 4%. A solar module having an area of one square meter with an energy conversion efficiency of 18% generates approximately 180 watts. If reflection loss can be eliminated, the power output can be increased to 187 watts. Since conventional thin-film anti-reflection coatings do not have sufficient environmental stability, we investigated the feasibility of ion beam modification of the glass surface to obtain reduction of reflectance. Our findings are generally applicable to all solar modules that use glass encapsulation, as well as commercial float glass used in windows and other applications. Ion implantation of argon, fluorine, and xenon into commercial low-iron soda lime float glass, standard float glass, and borosilicate glass was studied by implantation, annealing, and measurement of reflectance. The three ions all affected reflectance. The most significant change was obtained by argon implantation into both low-iron and standard soda-lime glass. In this way samples were formed with reflectance lower than can be obtained with a single-layer coatings of magnesium fluoride. Integrated reflectance was reduced from 4% to 1% in low-iron soda lime glass typical of the glass used in solar modules. The reduction of reflectance of borosilicate glass was not as large; however borosilicate glass is not typically used in flat plate solar modules. Unlike conventional semiconductor ion implantation doping, glass reflectance reduction was found to be tolerant to large variations in implant dose, meaning that the process does not require high dopant uniformity. Additionally, glass implantation does not require mass analysis. Simple, high current ion implantation equipment can be developed for this process; however, before the process

  15. Structural and optical characterization of Mn doped ZnS nanocrystals elaborated by ion implantation in SiO2

    International Nuclear Information System (INIS)

    Bonafos, C.; Garrido, B.; Lopez, M.; Romano-Rodriguez, A.; Gonzalez-Varona, O.; Perez-Rodriguez, A.; Morante, J.R.; Rodriguez, R.

    1999-01-01

    Mn doped ZnS nanocrystals have been formed in SiO 2 layers by ion implantation and thermal annealing. The structural analysis of the processed samples has been performed mainly by Secondary Ion Mass Spectroscopy (SIMS) and Transmission Electron Microscopy (TEM). The data show the precipitation of ZnS nanocrystals self-organized into two layers parallel to the free surface. First results of the optical analysis of samples co-implanted with Mn show the presence of a yellow-green photoluminescence depending on the Mn concentration and the size of the nanocrystals, suggesting the doping with Mn of some precipitates

  16. Investigation of the Si(111) surface in uhv: oxidation and the effect of surface phosphorus

    International Nuclear Information System (INIS)

    Tom, H.W.K.; Zhu, X.D.; Shen, Y.R.; Somorjai, G.A.

    1984-06-01

    We have studied the initial stages of oxidation, the segregation of phosphorus, and the effect of phosphorus on oxidation of the Si(111) 7 x 7 surface using optical second-harmonic generation. We have also observed a (√3 x √3)R30 0 LEED pattern for P on Si

  17. Haemocompatibility evaluation of DLC- and SiC-coated surfaces

    Directory of Open Access Journals (Sweden)

    Nurdin N.

    2003-06-01

    Full Text Available Diamond-like carbon (DLC and silicon carbide (SiC coatings are attractive because of low friction coefficient, high hardness, chemical inertness and smooth finish, which they provide to biomedical devices. Silicon wafers (Siwaf and silicone rubber (Sirub plates were coated using plasma-enhanced chemical vapour deposition (PE-CVD techniques. This article describes: 1- the characterization of modified surfaces using attenuated total reflection-Fourier transform infrared spectroscopy (ATR/FTIR and contact angle measurements, 2- the results of three in-vitro haemocompatibility assays. Coated surfaces were compared to uncoated materials and various substrates such as polymethylmethacrylate (PMMA, polyethylene (LDPE, polydimethylsiloxane (PDMS and medical steel (MS. Thrombin generation, blood platelet adhesion and complement convertase activity tests revealed the following classification, from the most to the least heamocompatible surface: Sirub/ DLC-Sirub/ DLC-Siwaf/ LDPE/ PDMS/ SiC-Siwaf/ Siwaf/ PMMA/ MS. The DLC coating surfaces delayed the clotting time, tended to inhibit the platelet and complement convertase activation, whereas SiC-coated silicon wafer can be considered as thrombogenic. This study has taken into account three events of the blood activation: coagulation, platelet activation and inflammation. The response to those events is an indicator of the in vitro haemocompatibility of the different surfaces and it allows us to select biomaterials for further in vivo blood contacting investigations.

  18. Microfabricated Microwave-Integrated Surface Ion Trap

    Science.gov (United States)

    Revelle, Melissa C.; Blain, Matthew G.; Haltli, Raymond A.; Hollowell, Andrew E.; Nordquist, Christopher D.; Maunz, Peter

    2017-04-01

    Quantum information processing holds the key to solving computational problems that are intractable with classical computers. Trapped ions are a physical realization of a quantum information system in which qubits are encoded in hyperfine energy states. Coupling the qubit states to ion motion, as needed for two-qubit gates, is typically accomplished using Raman laser beams. Alternatively, this coupling can be achieved with strong microwave gradient fields. While microwave radiation is easier to control than a laser, it is challenging to precisely engineer the radiated microwave field. Taking advantage of Sandia's microfabrication techniques, we created a surface ion trap with integrated microwave electrodes with sub-wavelength dimensions. This multi-layered device permits co-location of the microwave antennae and the ion trap electrodes to create localized microwave gradient fields and necessary trapping fields. Here, we characterize the trap design and present simulated microwave performance with progress towards experimental results. This research was funded, in part, by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA).

  19. Facies of ion bombarded surfaces of brittle materials

    International Nuclear Information System (INIS)

    Primak, W.

    1975-12-01

    Materials were bombarded by protons, deuterons, and helium ions. The materials investigated were quartz; glasses; carbides and borides (SiC, B 4 C, TiB 2 ); oxides and nitrides (magnorite, sapphire, spinel, Al 2 O 3 , Si 3 N 4 , ZrO 2 , BaTiO 3 ); and miscellaneous (graphite, LiNbO 3 , copper). Oberservations were of growth, reflectivity, blistering, surface ablation, and swelling. Calculations were made of the effects of a layer, of its gradual transformation, and of the introduction of a gas. It is concluded that: Radiation blistering is not a primary process. Observations of blister formation and exfoliation cannot be used to calculate the surface ablation rate. The primary process is the development of a microporous layer which causes swelling. Visible blisters are caused by fracturing by transverse stresses in this layer and may occur during the bombardment, or in some cases, much later, in storage. There is no evidence of extreme gas pressures in the blisters. When blisters develop, they may be stable under continued bombardment for a dose many times that at which they formed. The swelling is a better index of the effects than is the blistering, and must be associated in most cases with permeability to the gas. Behavior with protons and deuterons is similar, with helium different. All but quartz, vitreous silica, and Pyrex are impervious to hydrogen and deuterium; only dense barium crown glass, carbides, borides, oxides, and nitrides are impervious to helium. Quartz shows swelling caused by conversion to a vitreous product of much lower density but no porosity, while for the others, most of the swelling and surface growth is caused by porosity. Surface ablation by the blistering process may be reduced by initial porosity or by initial or subsequent surface fissuring. However, for impervious materials, surface damage by the introduction of porosity would continue

  20. Ion irradiation effects on a magnetic Si/Ni/Si trilayer and lateral magnetic-nonmagnetic multistrip patterning by focused ion beam

    Science.gov (United States)

    Dev, B. N.; Banu, Nasrin; Fassbender, J.; Grenzer, J.; Schell, N.; Bischoff, L.; Groetzschel, R.; McCord, J.

    2017-10-01

    Fabrication of a multistrip magnetic/nonmagnetic structure in a thin sandwiched Ni layer [Si(5 nm)/Ni(15 nm)/Si] by a focused ion beam (FIB) irradiation has been attempted. A control experiment was initially performed by irradiation with a standard 30 keV Ga ion beam at various fluences. Analyses were carried out by Rutherford backscattering spectrometry, X-ray reflectivity, magnetooptical Kerr effect (MOKE) measurements and MOKE microscopy. With increasing ion fluence, the coercivity as well as Kerr rotation decreases. A threshold ion fluence has been identified, where ferromagnetism of the Ni layer is lost at room temperature and due to Si incorporation into the Ni layer, a Ni0.68Si0.32 alloy layer is formed. This fluence was used in FIB irradiation of parallel 50 nm wide stripes, leaving 1 µm wide unirradiated stripes in between. MOKE microscopy on this FIB-patterned sample has revealed interacting magnetic domains across several stripes. Considering shape anisotropy effects, which would favour an alignment of magnetization parallel to the stripe axis, the opposite behaviour is observed. Magneto-elastic effects introducing a stress-induced anisotropy component oriented perpendicular to the stripe axis are the most plausible explanation for the observed behaviour.

  1. MarsSI: Martian surface data processing information system

    Science.gov (United States)

    Quantin-Nataf, C.; Lozac'h, L.; Thollot, P.; Loizeau, D.; Bultel, B.; Fernando, J.; Allemand, P.; Dubuffet, F.; Poulet, F.; Ody, A.; Clenet, H.; Leyrat, C.; Harrisson, S.

    2018-01-01

    MarsSI (Acronym for Mars System of Information, https://emars.univ-lyon1.fr/MarsSI/, is a web Geographic Information System application which helps managing and processing martian orbital data. The MarsSI facility is part of the web portal called PSUP (Planetary SUrface Portal) developed by the Observatories of Paris Sud (OSUPS) and Lyon (OSUL) to provide users with efficient and easy access to data products dedicated to the martian surface. The portal proposes 1) the management and processing of data thanks to MarsSI and 2) the visualization and merging of high level (imagery, spectral, and topographic) products and catalogs via a web-based user interface (MarsVisu). The portal PSUP as well as the facility MarsVisu is detailed in a companion paper (Poulet et al., 2018). The purpose of this paper is to describe the facility MarsSI. From this application, users are able to easily and rapidly select observations, process raw data via automatic pipelines, and get back final products which can be visualized under Geographic Information Systems. Moreover, MarsSI also contains an automatic stereo-restitution pipeline in order to produce Digital Terrain Models (DTM) on demand from HiRISE (High Resolution Imaging Science Experiment) or CTX (Context Camera) pair-images. This application is funded by the European Union's Seventh Framework Programme (FP7/2007-2013) (ERC project eMars, No. 280168) and has been developed in the scope of Mars, but the design is applicable to any other planetary body of the solar system.

  2. MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si

    International Nuclear Information System (INIS)

    Yu Xiangkun; Shao Lin; Chen, Q.Y.; Trombetta, L.; Wang Chunyu; Dharmaiahgari, Bhanu; Wang Xuemei; Chen Hui; Ma, K.B.; Liu Jiarui; Chu, W.-K.

    2006-01-01

    We studied the irradiation effect of 2-MeV Si ions on HfO 2 films deposited on Si substrates. HfO 2 films ∼11 nm thick were deposited onto Si substrates by chemical vapor deposition. The samples were then irradiated by 2-MeV Si ions at a fluence of 1 x 10 14 cm -2 at room temperature, followed by rapid thermal annealing at 1000 deg. C for 10 s. After annealing, a layer of aluminum was deposited on the samples as the gate electrode to form metal-oxide-semiconductor (MOS) capacitor structures. Rutherford backscattering spectrometry and electrical measurement of both capacitance and current as a function of voltage were used to characterize the samples before and after annealing. Non-insulating properties of the HfO 2 films deteriorated immediately after the ion irradiation, but rapid thermal annealing effectively repaired the irradiation damages, as reflected in improved capacitance versus voltage characteristics and significant reduction of leakage current in the MOS capacitors

  3. Synthesis of embossing Si nanomesh and its application as an anode for lithium ion batteries

    Science.gov (United States)

    Cho, Sanghyun; Jang, Ho Young; Jung, Insub; Liu, Lichun; Park, Sungho

    2017-09-01

    Voids in nanostructured silicon (Si) anodes are believed to effectively mitigate the gradual performance degradation during repeated charge/discharge in lithium ion batteries (LIBs). In this work, we first demonstrate an embossing Si nanomesh structure bearing substantial voids in three dimensions for LIB applications. A solid alumina framework and a sacrificial layer of Ag serve as a template for embossing Si nanomesh structures. After complete dissolution of the alumina framework and the Ag layer, an embossing Si nanomesh exhibits highly ordered and high density nanoholes in an interconnected framework. The model Si nanomesh fabricated by our method has holes ∼70 nm in diameter, has ∼96 holes/μm2, and is ∼40 nm in thickness. We use this void-rich embossing Si nanomesh as a LIB anode, achieving significant enhancement in battery performance in terms of discharge capacity, cycling stability, and structural maintenance compared to a counterpart Si nanofilm without voids.

  4. Tunable ion-swelling for nanopatterning of macroscopic surfaces: The role of proximity effects

    International Nuclear Information System (INIS)

    Highlights: ► Utilizing ion irradiation and nanosphere lithography to induce local swelling on Si. ► Pattern height and curvature were tailored by the mask and irradiation parameters. ► Proximity exposure effect calculations to predict the radial ion fluence distribution. ► Good agreement between AFM profiles and ion fluence distributions. ► Surface profiles were predicted for several particle shapes, sizes, and ion energies. - Abstract: Ordered surface nanopatterns with different spatial periods and various characters were prepared on silicon surfaces by masked ion irradiation utilizing the local ion-swelling effect. Langmuir–Blodgett (LB) monolayers of hexagonally arranged Stöber silica particles as nanomasks were applied on large area Si substrates during Ar + or Xe 2+ exposure with different fluences. We show that the height and curvature of surface swelling patterns can be tuned by appropriate selection of the particle diameter, ion energy, and ion fluence. It is also revealed that the ion beam-induced anisotropic deformation of the silica mask can be exploited to tailor the surface geometry. We point that, having knowledge on the diameters and average spacing between the silica particles as extrinsic beam spreading factors, and considering the lateral straggling of the bombarding ions in the mask and in the substrate material as intrinsic beam spreading factors, a simple model of the radial fluence distribution can be applied to predict the main features of irradiation-induced surface patterns. The role of proximity effects in the potential use of this easy, fast, wafer-scale nanofabrication method is discussed.

  5. Controllable fabrication of amorphous Si layer by energetic cluster ion bombardment

    Czech Academy of Sciences Publication Activity Database

    Lavrentiev, Vasyl; Vorlíček, Vladimír; Dejneka, Alexandr; Chvostová, Dagmar; Jäger, Aleš; Vacík, Jiří; Jastrabík, Lubomír; Naramoto, H.; Narumi, K.

    2013-01-01

    Roč. 98, SI (2013), s. 49-55 ISSN 0042-207X R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 ; RVO:61389005 Keywords : energetic cluster s * silicon * surface modification * amorphization * nanostructure * Raman scattering * ion channeling Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 1.426, year: 2013 http://ac.els-cdn.com/S0042207X13001759/1-s2.0-S0042207X13001759-main.pdf?_tid=04e9c946-21dd-11e3-b076-00000aacb361&acdnat=1379672070_859355b2850a09ac74bc8ff413e35dda

  6. In-induced stable ordering of stepped Si(553) surface

    Science.gov (United States)

    Chauhan, Amit Kumar Singh; Niazi, Asad; Nair, Lekha; Gupta, Govind

    2015-05-01

    The growth mechanism and adsorbate-induced surface morphology of metal atoms on semiconducting surfaces crucially determines the electronic and physicochemical properties of these metal/semiconductor systems. In this study, we investigate the kinetically controlled growth of indium (In) atoms on the high index stepped Si(553)-7 × 7 surface and the thermal stability of various novel In-induced superstructural phases formed during adsorption/desorption process. Auger electron spectroscopy analysis reveals that In adsorption at room temperature (RT) and at 350 °C, with a controlled incident flux of 0.0016 ML/s, proceeds in the Stranski-Krastanov growth mode where two dimensional (2D)/three dimensional (3D) islands are formed on top of two complete monolayers. At higher substrate temperature up to 450 °C, the growth of In atoms occurs in the form of islands on the bare Si(553) surface, and In coverage is limited to the sub-monolayer regime. During the thermal desorption of the RT grown In/Si(553) system, the In clusters rearrange themselves and an unusual "cluster to layer" transformation occurs on top of the stable monolayer. In situ low energy electron diffraction analysis during adsorption and desorption shows the development of various coverage and temperature dependent In-induced superstructural phases on Si(553) surface, such as: (8 × 2) after annealing at 520 °C with coverage 0.5 ML, (8 × 4) after annealing at 580 °C (∼1 ML coverage) and (553)-7 × 1 + (111)-√3 × √3-R30° at 0.3 ML (630 °C). These adsorbate-induced superstructural phases could potentially be utilized as templates for pattern assisted growth of various exotic 1D/2D structures for optoelectronics and photovoltaic applications.

  7. Secondary ion mass spectrometric signal enhancement of phosphatidylcholine dioleoyl on enlarged nanoparticles surface

    Energy Technology Data Exchange (ETDEWEB)

    Gulin, A. [N.N. Semenov Institute of Chemical Physics, RAS, Kosigin str. 4, Moscow 119991 (Russian Federation); Mochalova, M. [Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow 141700 (Russian Federation); Denisov, N. [Institute of Problem of Chemical Physics, RAS, Semenov av. 1, Chernogolovka, 142432 (Russian Federation); Nadtochenko, V., E-mail: nadtochenko@gmail.com [N.N. Semenov Institute of Chemical Physics, RAS, Kosigin str. 4, Moscow 119991 (Russian Federation); Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow 141700 (Russian Federation); Institute of Problem of Chemical Physics, RAS, Semenov av. 1, Chernogolovka, 142432 (Russian Federation)

    2014-10-15

    Graphical abstract: - Highlights: • TOF-SIMS mass-spectra of DOPC lipid on enlarged nanoparticles surface were studied. • Metallic, semiconductor, dielectric and hybrid nanoparticles were examined. • Effect of nanoparticles on mass-spectral peaks intensity was investigated. • The highest signal enhancement of 42 times was found for hybrid core–shell Au/SiO{sub 2} nanoparticles. - Abstract: A silicon wafer surface coverage of nanoparticles (NPs) can enhance the L-α-phosphatidylcholine dioleoyl (DOPC) signal intensity in time-of-flight secondary ion mass spectrometry (TOF-SIMS). A ToF-SIMS mass spectrometer was used with a pulsed primary beam of focused 30 keV Bi{sub 3}{sup +} ions. The signal enhancing effect has been studied for metallic (Ag, Au, Pb), semiconductor (TiO{sub 2}), dielectric (SiO{sub 2}) and hybrid (Au/TiO{sub 2}NPs, core–shell Au/SiO{sub 2}) nanoparticles. Ag NPs can attenuate secondary ions signal, whereas all other studied NPs show the signal enhancement. The emission of DOPC lipid secondary ions immobilized on core–shell Au/SiO{sub 2}NPs was enhanced up to 42 times. This technique is a simple preparatory method enabling an overall increase in molecular lipid ions.

  8. Secondary ion mass spectrometric signal enhancement of phosphatidylcholine dioleoyl on enlarged nanoparticles surface

    International Nuclear Information System (INIS)

    Gulin, A.; Mochalova, M.; Denisov, N.; Nadtochenko, V.

    2014-01-01

    Graphical abstract: - Highlights: • TOF-SIMS mass-spectra of DOPC lipid on enlarged nanoparticles surface were studied. • Metallic, semiconductor, dielectric and hybrid nanoparticles were examined. • Effect of nanoparticles on mass-spectral peaks intensity was investigated. • The highest signal enhancement of 42 times was found for hybrid core–shell Au/SiO 2 nanoparticles. - Abstract: A silicon wafer surface coverage of nanoparticles (NPs) can enhance the L-α-phosphatidylcholine dioleoyl (DOPC) signal intensity in time-of-flight secondary ion mass spectrometry (TOF-SIMS). A ToF-SIMS mass spectrometer was used with a pulsed primary beam of focused 30 keV Bi 3 + ions. The signal enhancing effect has been studied for metallic (Ag, Au, Pb), semiconductor (TiO 2 ), dielectric (SiO 2 ) and hybrid (Au/TiO 2 NPs, core–shell Au/SiO 2 ) nanoparticles. Ag NPs can attenuate secondary ions signal, whereas all other studied NPs show the signal enhancement. The emission of DOPC lipid secondary ions immobilized on core–shell Au/SiO 2 NPs was enhanced up to 42 times. This technique is a simple preparatory method enabling an overall increase in molecular lipid ions

  9. Metal impurity-assisted formation of nanocone arrays on Si by low energy ion-beam irradiation

    Science.gov (United States)

    Steeves Lloyd, Kayla; Bolotin, Igor L.; Schmeling, Martina; Hanley, Luke; Veryovkin, Igor V.

    2016-10-01

    Fabrication of nanocone arrays on Si surfaces was demonstrated using grazing incidence irradiation with 1 keV Ar+ ions concurrently sputtering the surface and depositing metal impurity atoms on it. Among three materials compared as co-sputtering targets Si, Cu and stainless steel, only steel was found to assist the growth of dense arrays of nanocones at ion fluences between 1018 and 1019 ions/cm2. The structural characterization of samples irradiated with these ion fluences using Scanning Electron Microscopy and Atomic Force Microscopy revealed that regions far away from co-sputtering targets are covered with nanoripples, and that nanocones popped-up out of the rippled surfaces when moving closer to co-sputtering targets, with their density gradually increasing and reaching saturation in the regions close to these targets. The characterization of the samples' chemical composition with Total Reflection X-ray Fluorescence Spectrometry and X-ray Photoelectron Spectroscopy revealed that the concentration of metal impurities originating from stainless steel (Fe, Cr and Ni) was relatively high in the regions with high density of nanocones (Fe reaching a few atomic percent) and much lower (factor of 10 or so) in the region of nanoripples. Total Reflection X-ray Fluorescence Spectrometry measurements showed that higher concentrations of these impurities are accumulated under the surface in both regions. X-ray Photoelectron Spectroscopy experiments showed no direct evidence of metal silicide formation occurring on one region only (nanocones or nanoripples) and thus showed that this process could not be the driver of nanocone array formation. Also, these measurements indicated enhancement in oxide formation on regions covered by nanocones. Overall, the results of this study suggest that the difference in concentration of metal impurities in the thin near-surface layer forming under ion irradiation might be responsible for the differences in surface structures.

  10. Disorder accumulation and recovery in gold-ion irradiated 3C-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Weilin; Weber, William J.; Lian, Jie; Kalkhoran, N. M.

    2009-01-12

    A single-crystal 3C-SiC film on the Si/SiO2/Si (SIMOX) substrate was irradiated in different areas at 156 K with Au2+ ions to low fluences. The disorder profiles as a function of dose on both the Si and C sublattices have been determined in situ using a combination of 0.94 MeV D+ Rutherford backscattering spectrometry and nuclear reaction analysis in channeling geometry along the <100>, <110> and <111> axes. The results indicate that for the same damage state, the level of disorder on the Si sublattice in 3C-SiC follows a decreasing order along the <111>, <100> and <110> axes, while that on the C sublattice shows comparable values. Similar levels of Si and C disorder are observed along the <111> axis over the applied dose range. However, the level of C disorder is higher than that of Si disorder along either <100> or <110>. The amount of disorder recovery during thermal annealing processes depends on the sublattice (Si or C) and crystallographic orientation. Room-temperature recovery occurs for both sublattices in 3C-SiC irradiated to a dose of 0.047 dpa or lower. Significant recovery is observed along all directions during thermal annealing at 600 K. The results will be discussed and compared to those for 6H- and 4H-SiC under similar irradiation conditions.

  11. Topographical characterization of Ar-bombarded Si(1 1 1) surfaces by atomic force microscopy

    CERN Document Server

    Niebieskikwiat, D G; Pregliasco, G R; Gayone, J E; Grizzi, O; Sanchez, E A

    2002-01-01

    We used atomic force microscopy to study the topographical changes induced on Si(1 1 1) surfaces by 10-22 keV Ar sup + bombardment. The irradiation was carried on normal to the surface with doses in the 1-60x10 sup 1 sup 6 ions/cm sup 2 range. We observed a first generation of blisters at a critical dose around 3x10 sup 1 sup 6 ions/cm sup 2 , which flakes off at 19x10 sup 1 sup 6 ions/cm sup 2 , and a second generation of smaller blisters between 35 and 45x10 sup 1 sup 6 ions/cm sup 2. Measurements of the mean surface height show that at low irradiation doses the surface inflates because of voids produced by Ar sup + implantation. For doses greater than 20x10 sup 1 sup 6 Ar sup + /cm sup 2 the height decreases linearly because of sputtering, with a slope corresponding to a sputtering yield of 1.4. Finally, we present electron spectra produced during grazing proton bombardment of samples whose topography has been modified by Ar irradiation.

  12. The effect of incidence angle on disorder production in ion implanted Si

    International Nuclear Information System (INIS)

    Sukirno; Carter, G.

    1989-01-01

    Ne, Ar, Sb, and Xe ions have been implanted, at 30 keV or 80 keV and at various incidence angles, into Si substrates maintained at room temperature during implantation. Implantation-induced Si disorder was measured using Rutherford backscattering channelling. The effects upon disorder of various incidence angles were studied over a fluence range of 10 12 -10 16 ions·cm -2 . The results show that, at low fluences the lighter (Ne) and slightly heavier (Ar) ion implantations generate a bimodal disorder-depth profile, whilst at higher fluences measurements of amorphised layer thickness as a function of ion incidence angle allow values of the standard deviation of the disorder profile parallel and transverse to the ion beam direction for each ion to be obtained with good agreement to theoretical predictions. (author)

  13. Glancing-angle scattering of fast ions at crystal surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Mannami, Michihiko; Narumi, Kazumasa; Katoh, Humiya; Kimura, Kenji [Kyoto Univ. (Japan). Faculty of Engineering

    1997-03-01

    Glancing angle scattering of fast ions from a single crystal surface is a novel technique to study ion-surface interaction. Results of recent studies of ion-surface interaction are reviewed for ions with velocities faster than the Fermi velocity of solid. For the ions with velocities less than the Fermi velocity of target valence electrons the ion-surface interaction shows a new aspect where only the valence electrons of target solid participate in the stopping processes. It will show that the position-dependent stopping power of a surface for these ions governed by the elastic collisions of valence electrons and the ions. A method is proposed from this position-dependent stopping power to derived the electron density distribution averaged over the plane parallel to the surface. (author)

  14. Linear dose dependence of ion beam mixing of metals on Si

    International Nuclear Information System (INIS)

    Poker, D.B.; Appleton, B.R.

    1985-01-01

    These experiments were conducted to determine the dose dependences of ion beam mixing of various metal-silicon couples. V/Si and Cr/Si were included because these couples were previously suspected of exhibiting a linear dose dependence. Pd/Si was chosen because it had been reported as exhibiting only the square root dependence. Samples were cut from wafers of (100) n-type Si. The samples were cleaned in organic solvents, etched in hydrofluoric acid, and rinsed with methanol before mounting in an oil-free vacuum system for thin-film deposition. Films of Au, V, Cr, or Pd were evaporated onto the Si samples with a nominal deposition rate of 10 A/s. The thicknesses were large compared with those usually used to measure ion beam mixing and were used to ensure that conditions of unlimited supply were met. Samples were mixed with Si ions ranging in energy from 300 to 375 keV, chosen to produce ion ranges that significantly exceeded the metal film depth. Si was used as the mixing ion to prevent impurity doping of the Si substrate and to exclude a background signal from the Rutherford backscattering (RBS) spectra. Samples were mixed at room temperature, with the exception of the Au/Si samples, which were mixed at liquid nitrogen temperature. The samples were alternately mixed and analyzed in situ without exposure to atmosphere between mixing doses. The compositional distributions after mixing were measured using RBS of 2.5-MeV 4 He atoms

  15. Hydrogen generation due to water splitting on Si - terminated 4H-Sic(0001) surfaces

    Science.gov (United States)

    Li, Qingfang; Li, Qiqi; Yang, Cuihong; Rao, Weifeng

    2018-02-01

    The chemical reactions of hydrogen gas generation via water splitting on Si-terminated 4H-SiC surfaces with or without C/Si vacancies were studied by using first-principles. We studied the reaction mechanisms of hydrogen generation on the 4H-SiC(0001) surface. Our calculations demonstrate that there are major rearrangements in surface when H2O approaches the SiC(0001) surface. The first H splitting from water can occur with ground-state electronic structures. The second H splitting involves an energy barrier of 0.65 eV. However, the energy barrier for two H atoms desorbing from the Si-face and forming H2 gas is 3.04 eV. In addition, it is found that C and Si vacancies can form easier in SiC(0001)surfaces than in SiC bulk and nanoribbons. The C/Si vacancies introduced can enhance photocatalytic activities. It is easier to split OH on SiC(0001) surface with vacancies compared to the case of clean SiC surface. H2 can form on the 4H-SiC(0001) surface with C and Si vacancies if the energy barriers of 1.02 and 2.28 eV are surmounted, respectively. Therefore, SiC(0001) surface with C vacancy has potential applications in photocatalytic water-splitting.

  16. CoO/NiSi(x) core-shell nanowire arrays as lithium-ion anodes with high rate capabilities.

    Science.gov (United States)

    Qi, Yue; Du, Ning; Zhang, Hui; Fan, Xing; Yang, Yang; Yang, Deren

    2012-02-07

    This paper describes a facile chemical vapor deposition (CVD) and subsequent radio-frequency (RF)-sputtering approach for the synthesis of CoO/NiSi(x) core-shell nanowire (NW) arrays on Ni foams. The metallic core (i.e., NiSi(x)) with high conductivity acts as a nanostructured current collector. The as-synthesized CoO/NiSi(x) core-shell NW arrays have been applied as anode materials for lithium-ion batteries, which deliver high cycle life and enhanced power performance compared to planar CoO electrodes on Ni foams. The high surface-to-volume ratio and improved electronic/ionic conductivity of the nanostructured electrodes may be responsible for the improved performance. This journal is © The Royal Society of Chemistry 2012

  17. Backscattering of light ions from metal surfaces

    International Nuclear Information System (INIS)

    Verbeek, H.

    1975-07-01

    When a metal target is bombarded with light ions some are implanted and some are reflected from the surface or backscattered from deeper layers. This results in an energy distribution of the backscattered particles which reaches from zero to almost the primary energy. The number of the backscattered particles and their energy, angular, and charge distributions depends largely on the energy and the ion target combination. For high energies (i.e., greater than50 keV for protons) particles are backscattered in a single collision governed by the Rutherford cross section. Protons and He-ions with energies of 100 keV to several MeV are widely used for thin film analysis. For lower energies multiple collisions and the screening of the Coulomb potential have to be taken into account, which makes the theoretical treatment more difficult. This energy region is, however, of special interest in the field of nuclear fusion research. Some recent results for energies below 20 keV are discussed in some detail. (auth)

  18. High Performance Li4Ti5O12/Si Composite Anodes for Li-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Chunhui Chen

    2015-08-01

    Full Text Available Improving the energy capacity of spinel Li4Ti5O12 (LTO is very important to utilize it as a high-performance Li-ion battery (LIB electrode. In this work, LTO/Si composites with different weight ratios were prepared and tested as anodes. The anodic and cathodic peaks from both LTO and silicon were apparent in the composites, indicating that each component was active upon Li+ insertion and extraction. The composites with higher Si contents (LTO:Si = 35:35 exhibited superior specific capacity (1004 mAh·g−1 at lower current densities (0.22 A·g−1 but the capacity deteriorated at higher current densities. On the other hand, the electrodes with moderate Si contents (LTO:Si = 50:20 were able to deliver stable capacity (100 mAh·g−1 with good cycling performance, even at a very high current density of 7 A·g−1. The improvement in specific capacity and rate performance was a direct result of the synergy between LTO and Si; the former can alleviate the stresses from volumetric changes in Si upon cycling, while Si can add to the capacity of the composite. Therefore, it has been demonstrated that the addition of Si and concentration optimization is an easy yet an effective way to produce high performance LTO-based electrodes for lithium-ion batteries.

  19. Cesium ion bombardment of metal surfaces

    International Nuclear Information System (INIS)

    Tompa, G.S.

    1986-01-01

    The steady state cesium coverage due to cesium ion bombardment of molybdenum and tungsten was studied for the incident energy range below 500 eV. When a sample is exposed to a positive ion beam, the work function decreases until steady state is reached with a total dose of less than ≅10 16 ions/cm 2 , for both tungsten and molybdenum. A steady state minimum work function surface is produced at an incident energy of ≅100 eV for molybdenum and at an incident energy of ≅45 eV for tungsten. Increasing the incident energy results in an increase in the work function corresponding to a decrease in the surface coverage of cesium. At incident energies less than that giving the minimum work function, the work function approaches that of cesium metal. At a given bombarding energy the cesium coverage of tungsten is uniformly less than that of molybdenum. Effects of hydrogen gas coadsorption were also examined. Hydrogen coadsorption does not have a large effect on the steady state work functions. The largest shifts in the work function due to the coadsorption of hydrogen occur on the samples when there is no cesium present. A theory describing the steady-state coverage was developed is used to make predictions for other materials. A simple sticking and sputtering relationship, not including implantation, cannot account for the steady state coverage. At low concentrations, cesium coverage of a target is proportional to the ratio of (1 - β)/γ where β is the reflection coefficient and γ is the sputter yield. High coverages are produced on molybdenum due to implantation and low backscattering, because molybdenum is lighter than cesium. For tungsten the high backscattering and low implantation result in low coverages

  20. Anomalous behavior in temporal evolution of ripple wavelength under medium energy Ar{sup +}-ion bombardment on Si: A case of initial wavelength selection

    Energy Technology Data Exchange (ETDEWEB)

    Garg, Sandeep Kumar [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India); Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Cuerno, Rodolfo [Departamento de Matematicas and Grupo Interdisciplinar de Sistemas Complejos (GISC), Universidad Carlos III de Madrid, 28911 Leganes (Spain); Kanjilal, Dinakar [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Som, Tapobrata, E-mail: tsom@iopb.res.in [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India)

    2016-06-14

    We have studied the early stage dynamics of ripple patterns on Si surfaces, in the fluence range of 1–3 × 10{sup 18} ions cm{sup −2}, as induced by medium energy Ar{sup +}-ion irradiation at room temperature. Under our experimental conditions, the ripple evolution is found to be in the linear regime, while a clear decreasing trend in the ripple wavelength is observed up to a certain time (fluence). Numerical simulations of a continuum model of ion-sputtered surfaces suggest that this anomalous behavior is due to the relaxation of the surface features of the experimental pristine surface during the initial stage of pattern formation. The observation of this hitherto unobserved behavior of the ripple wavelength seems to have been enabled by the use of medium energy ions, where the ripple wavelengths are found to be order(s) of magnitude larger than those at lower ion energies.

  1. In-induced stable ordering of stepped Si(553) surface

    Energy Technology Data Exchange (ETDEWEB)

    Chauhan, Amit Kumar Singh [Physics of Energy Harvesting, (CSIR-NPL) , Dr. K.S. KrishnanRoad, New Delhi -110012 (India); Department of Physics, JMI, New Delhi 110025 (India); Niazi, Asad; Nair, Lekha [Department of Physics, JMI, New Delhi 110025 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting, (CSIR-NPL) , Dr. K.S. KrishnanRoad, New Delhi -110012 (India)

    2015-05-15

    Highlights: • Control growth of In on step Si(553) & thermal stability of novel superstructure. • Influence of temperature on growth modes (SK,VB) under different growth conditions. • In-induced superstructure: (8 × 2), (8 × 4), mixed (553)-7 × 1 + (111)√3 × √3R30° phases. - Abstract: The growth mechanism and adsorbate-induced surface morphology of metal atoms on semiconducting surfaces crucially determines the electronic and physicochemical properties of these metal/semiconductor systems. In this study, we investigate the kinetically controlled growth of indium (In) atoms on the high index stepped Si(553)-7 × 7 surface and the thermal stability of various novel In-induced superstructural phases formed during adsorption/desorption process. Auger electron spectroscopy analysis reveals that In adsorption at room temperature (RT) and at 350 °C, with a controlled incident flux of 0.0016 ML/s, proceeds in the Stranski–Krastanov growth mode where two dimensional (2D)/three dimensional (3D) islands are formed on top of two complete monolayers. At higher substrate temperature up to 450 °C, the growth of In atoms occurs in the form of islands on the bare Si(553) surface, and In coverage is limited to the sub-monolayer regime. During the thermal desorption of the RT grown In/Si(553) system, the In clusters rearrange themselves and an unusual “cluster to layer” transformation occurs on top of the stable monolayer. In situ low energy electron diffraction analysis during adsorption and desorption shows the development of various coverage and temperature dependent In-induced superstructural phases on Si(553) surface, such as: (8 × 2) after annealing at 520 °C with coverage 0.5 ML, (8 × 4) after annealing at 580 °C (∼1 ML coverage) and (553)-7 × 1 + (111)-√3 × √3-R30° at 0.3 ML (630 °C). These adsorbate-induced superstructural phases could potentially be utilized as templates for pattern assisted growth of various exotic 1D/2D structures for

  2. Synthesis of nano-patterned and Nickel Silicide embedded amorphous Si thin layer by ion implantation for higher efficiency solar devices

    Science.gov (United States)

    Bhowmik, D.; Bhattacharjee, S.; Lavanyakumar, D.; Naik, V.; Satpati, B.; Karmakar, P.

    2017-11-01

    We report the ion beam based single step synthesis process of surface-patterned amorphous Silicon (a-Si) with a buried plasmon active nickel silicide layer for the realization of cost-effective, higher efficiency Silicon (Si) photovoltaic devices. Simultaneous amorphization, surface pattern formation and buried layer development are achieved by normal incidence 10 keV Ni1+ ion bombardment on Si(100) surface at a fluence of 1 × 1017. Atomic Force Microscopy study shows rim-surrounded crater like periodic nanostructure on the surface whereas cross-sectional Transmission Electron Microscopy detects the amorphization and implant buried layer just below the surface. The distribution of implanted Ni ions and Si vacancies, obtained by the Monte Carlo simulation (SRIM) is consistent with the experimental results. Spatially resolved Electron Energy Loss Spectroscopy measurement detects that the buried layer is nickel silicide. The potential application of such nano-patterned and plasmon active system for future low-cost a-Si based higher efficient Photovoltaic devices is discussed.

  3. The post-annealing environment effect on the photoluminescence recovery of ion-irradiated Si nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Sias, U.S. [Instituto de Fisica - Universidade Federal do Rio Grande do Sul (UFRGS), C.P. 15051, 91501-970 Porto Alegre, RS (Brazil) and Centro Federal de Educacao Tecnologica de Pelotas (CEFET-RS), 96015-370 Pelotas, RS (Brazil)]. E-mail: uilson@cefetrs.tche.br; Behar, M. [Instituto de Fisica - Universidade Federal do Rio Grande do Sul (UFRGS), C.P. 15051, 91501-970 Porto Alegre, RS (Brazil); Boudinov, H. [Instituto de Fisica - Universidade Federal do Rio Grande do Sul (UFRGS), C.P. 15051, 91501-970 Porto Alegre, RS (Brazil); Moreira, E.C. [UFPel - UNIPAMPA, Campus Bage, 96400-970 Bage, RS (Brazil)

    2007-04-15

    In the present work we have investigated the influence of the post-annealing environment on the photoluminescence (PL) recovery of Si nanocrystals after ion irradiation. Samples originally produced by Si implantation into SiO{sub 2} matrix at 600 deg. C post-annealed at 1100 deg. C were further bombarded with 2 MeV Si{sup +}, at a fluence of {phi} = 2 x 10{sup 13} Si/cm{sup 2}. After irradiation the original emission, composed by two PL bands, was completely quenched. We shown that the environment of a post-annealing performed at 900 deg. C has a strong effect on the PL emission recovery. The intensity and shape of the PL spectra have revealed to be dependent of the annealing gas (N{sub 2} or Ar), annealing time, as well as the original Si excess. The results are explained on the basis of current theories.

  4. Semiconductor nanocrystals formed in SiO2 by ion implantation

    International Nuclear Information System (INIS)

    Zhu, J.G.; White, C.W.; Budai, J.D.; Withrow, S.P.; Chen, Y.

    1994-11-01

    Nanocrystals of group IV (Si, Ge and SiGe), III-V (GaAs), and II-VI (CdSe) semiconductor materials have been fabricated inside SiO 2 by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystalline semiconductor materials has been studied by transmission electron microscopy (TEM). The nanocrystals form in near-spherical shape with random crystal orientations in amorphous SiO 2 . Extensive studies on the nanocrystal size distributions have been carried out for the Ge nanocrystals by changing the implantation doses and the annealing temperatures. Remarkable roughening of the nanocrystals occurs when the annealing temperature is raised over the melting temperature of the implanted semiconductor material. Strong red photoluminescence peaked around 1.67 eV has been achieved in samples with Si nanocrystals in SiO 2

  5. Specific features of the nonradiative relaxation of Er{sup 3+} ions in epitaxial Si structures

    Energy Technology Data Exchange (ETDEWEB)

    Kudryavtsev, K. E., E-mail: konstantin@ipmras.ru; Kryzhkov, D. I.; Antonov, A. V.; Shengurov, D. V.; Shmagin, V. B.; Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2014-12-15

    The specific features of the nonradiative relaxation of Er{sup 3+} ions in Si:Er layers grown by sublimation molecular-beam epitaxy (SMBE) are studied. In Si:Er/Si diode structures containing precipitation-type emitting centers, a resonance photoresponse at the wavelength λ ≈ 1.5 μm is observed, which is indicative of the nonradiative relaxation of Er3+ ions via the energy back-transfer mechanism. Saturation of the erbium-related photocurrent is for the first time observed at high temperatures. This allows estimation of the concentration of Er centers that undergo relaxation via the above-mentioned back-transfer mechanism (N{sub 0} ≈ 5 × 10{sup 16} cm{sup −3}). In terms of order of magnitude, the estimated concentration N{sub 0} corresponds to the concentration of optically active Er ions upon excitation of the Si:Er layers by means of the recombination mechanism. The features of the nonradiative relaxation of Er{sup 3+} ions in Si:Er/Si structures with different types of emitting centers are analyzed.

  6. Effects of synchrotron x-rays on PVD deposited and ion implanted α-Si

    International Nuclear Information System (INIS)

    Yu, K.M.; Wang, L.; Walukiewicz, W.; Muto, S.; McCormick, S.; Abelson, J.R.

    1997-01-01

    The authors have studied the effects of intense X-ray irradiation on the structure of amorphous Si films. The films were obtained by either physical vapor deposition or by implantation of high energy ions into crystalline Si. They were exposed to different total doses of synchrotron X-rays. From the EXAFS and EXELFS measurements they find that an exposure to X-rays increases the Si coordination number. Also in the PVD films a prolonged X-ray exposure enlarges, by about 2%, the Si-Si bond length. Raman spectroscopy shows that Si amorphized with high energy ions contains small residual amounts of crystalline material. Irradiation of such films with X-rays annihilates those crystallites resulting in homogeneously amorphous layer with a close to four-fold coordination of Si atoms. This rearrangement of the local structure has a pronounced effect on the crystallization process of the amorphous films. Thermal annealing of X-ray irradiated ion amorphized films leads to nearly defect free solid phase epitaxy at 500 C. Also they observe a delay in the onset of the crystallization process in X-ray irradiated PVD films. They associate this with a reduced concentration of nucleation centers in the x-ray treated materials

  7. Si nano crystals by ultra-low energy ion implantation for non-volatile memory applications

    International Nuclear Information System (INIS)

    Coffin, H.; Bonafos, C.; Schamm, S.; Carrada, M.; Cherkashin, N.; Ben Assayag, G.; Dimitrakis, P.; Normand, P.; Respaud, M.; Claverie, A.

    2005-01-01

    In nanocrystal (nc) metal-oxide-semiconductor (MOS) memory structures, a fine control of nc location and population is required for pinpointing the optimal device architectures. In this work, we show how to manipulate and control the depth-position, size and surface density of two dimensional (2D) arrays of Si ncs embedded in thin ( 2 layers, fabricated by ultra-low energy (typically 1 keV) ion implantation and subsequent annealing. The influence of implantation and annealing conditions on the nc characteristics (e.g. size, density) and the charge storage properties of associated MOS structures is reported with particular emphasis upon the effect of annealing in N 2 -diluted-O 2 gas mixture. The latter annealing conditions restore the integrity of the oxide and allow for the fabrication of non-volatile memory devices operating at low-gate voltages. Annealing in diluted oxygen has also an effect on the population of silicon ncs. Their evolution has been studied as a function of the annealing duration under N 2 + O 2 at 900 o C. An extended spherical Deal-Grove model for the self-limiting oxidation of embedded Si ncs has been carried out. It shows that stress effects, due to the deformation of the oxide, slows down the chemical oxidation rate and leads to a self-limiting oxide growth. The model predictions are in agreement with the experimental results

  8. Endotaxially stabilized B2-FeSi nanodots in Si (100) via ion beam co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cassidy, Cathal, E-mail: c.cassidy@oist.jp; Singh, Vidyadhar; Grammatikopoulos, Panagiotis [Nanoparticles by Design Unit, Okinawa Institute of Science and Technology (OIST) Graduate University, 1919-1 Onna-Son, Okinawa 904-0495 (Japan); Kioseoglou, Joseph [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Lal, Chhagan [Department of Physics, University of Rajasthan, Jaipur, Rajasthan 302005 (India); Sowwan, Mukhles, E-mail: mukhles@oist.jp [Nanoparticles by Design Unit, Okinawa Institute of Science and Technology (OIST) Graduate University, 1919-1 Onna-Son, Okinawa 904-0495 (Japan); Nanotechnology Research Laboratory, Al-Quds University, East Jerusalem, P.O. Box 51000, Palestine (Country Unknown)

    2014-04-21

    We report on the formation of embedded B2-FeSi nanodots in [100]-oriented Si substrates, and investigate the crystallographic mechanism underlying the stabilization of this uncommon, bulk-unstable, phase. The nanodots were approximately 10 nm in size, and were formed by iron thin film deposition and subsequent annealing. Cross-sectional transmission electron microscopy, energy loss spectroscopy mapping, and quantitative image simulation and analysis were utilized to identify the phase, strain, and orientational relationship of the nanodots to the host silicon lattice. X-ray photoelectron spectroscopy was utilized to analyze the surface composition and local bonding. Elasticity calculations yielded a nanodot residual strain value of −18%. Geometrical phase analysis graphically pinpointed the positions of misfit dislocations, and clearly showed the presence of pinned (11{sup ¯}1{sup ¯}){sub Si}//(100){sub FeSi}, and unpinned (2{sup ¯}42){sub Si}//(010){sub FeSi}, interfaces. This partial endotaxy in the host silicon lattice was the mechanism that stabilized the B2-FeSi phase.

  9. Influence of He-ion irradiation on the characteristics of Pd/n-Si{sub 0.90}Ge{sub 0.10}/Si Schottky contacts

    Energy Technology Data Exchange (ETDEWEB)

    Mamor, M; Sellai, A; Bouziane, K; Harthi, S H Al; Busaidi, M Al; Gard, F S [Physics Department, Sultan Qaboos University, PO Box 36 Muscat 123, Sultanate of (Oman)

    2007-03-07

    Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of He-ion irradiated Pd/n-Si{sub 09}Ge{sub 0.10} Schottky contacts have been measured in the temperature range from 100 to 300 K. Schottky barrier properties such as the Schottky barrier height ({phi}{sub bn}) and ideality factor (n) have been studied as a function of temperature. The degree to which their characteristics deviated from the ideal case increased as the temperature decreased. A decrease in {phi}{sub bn} and an increase in n with decreasing temperature are observed. Additionally, linear dependence between the so-called temperature factor T{sub 0} and temperature as well as between {phi}{sub bn} and n are shown. This type of strong temperature dependence indicates the presence of a large degree of lateral inhomogeneities of the barrier height, resulting from the He-ion irradiation induced defects and traps which produce a variation in the number of free carriers. The presence of electrically active defects introduced by He-ion irradiation at and below the Si{sub 0.90}Ge{sub 0.10} surface support this interpretation.

  10. Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

    Science.gov (United States)

    Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

    Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

  11. Block copolymer-templated chemistry on Si, Ge, InP, and GaAs surfaces.

    Science.gov (United States)

    Aizawa, Masato; Buriak, Jillian M

    2005-06-29

    Patterning of semiconductor surfaces is an area of intense interest, not only for technological applications, such as molecular electronics, sensing, cellular recognition, and others, but also for fundamental understanding of surface reactivity, general control over surface properties, and development of new surface reactivity. In this communication, we describe the use of self-assembling block copolymers to direct semiconductor surface chemistry in a spatially defined manner, on the nanoscale. The proof-of-principle class of reactions evaluated here is galvanic displacement, in which a metal ion, M+, is reduced to M0 by the semiconductor, including Si, Ge, InP, and GaAs. The block copolymer chosen has a polypyridine block which binds to the metal ions and brings them into close proximity with the surface, at which point they undergo reaction; the pattern of resulting surface chemistry, therefore, mirrors the nanoscale structure of the parent block copolymer. This chemistry has the added advantage of forming metal nanostructures that result in an alloy or intermetallic at the interface, leading to strongly bound metal nanoparticles that may have interesting electronic properties. This approach has been shown to be very general, functioning on a variety of semiconductor substrates for both silver and gold deposition, and is being extended to organic and inorganic reactions on a variety of conducting, semiconducting, and insulating substrates.

  12. Ion beam studies of hydrogen implanted Si wafers

    International Nuclear Information System (INIS)

    Nurmela, A.; Henttinen, K.; Suni, T.; Tolkki, A.; Suni, I.

    2004-01-01

    We have studied silicon-on-insulator (SOI) materials with two different ion beam analysis methods. The SOI samples were implanted with boron and hydrogen ions. After implantation the wafers were annealed, and some of them were bonded to thermally oxidized silicon wafers. The damage in silicon single crystal due to ion implantations has been studied by Rutherford Backscattering in the channeling mode (RBS/C). The content of the ion-implanted hydrogen has been studied by elastic recoil detection analysis (ERDA) method. The strength of the implanted region after thermal annealings were measured with the crack opening method. The boron implantation before hydrogen implantation resulted to shallower implantation depth and lower splitting temperature than in samples implanted with hydrogen only. The boron implantation after hydrogen implantation did not influence the splitting temperature and RBS spectra showed that B implantation drove the H deeper to the sample

  13. Cell adhesion and growth on ion-implanted polymer surface

    International Nuclear Information System (INIS)

    Lee, Jae-Suk; Kaibara, M.; Iwaki, M.; Sasabe, H.; Suzuki, Y.; Kusakabe, M.

    1992-01-01

    The adhesion and growth of endothelial cells on ion-implanted polystyrene and segmented polyurethane surface were investigated. Ions of Na + , N 2 + , O 2 + , Ar + and Kr + were implanted to the polymer surface with ion fluences between 1 x 10 15 and 3 x 10 17 ions/cm 2 at energy of 150 KeV at room temperature. Ion-implanted polymers were characterized by FT-IR-ATR an Raman spectroscopies. The adhesion and proliferation of bovine aorta endothelial cells on ion-implanted polymer surface were observed by an optical microscope. The rate of growth of BAECs on ion-implanted PSt was faster than that on non-implanted PSt. Complete cell adhesion and growth were observed on ion-implanted SPU, whereas the adhesion and growth of BAECs on the non-implanted SPU was not observed. It was attempted to control the cell culture on the ion-implanted domain fabricated using a mask. (author)

  14. Infrared surface phonon polariton waveguides on SiC Substrate

    Science.gov (United States)

    Yang, Yuchen; Manene, Franklin M.; Lail, Brian A.

    2015-08-01

    Surface plasmon polariton (SPP) waveguides harbor many potential applications at visible and near-infrared (NIR) wavelengths. However, dispersive properties of the metal in the waveguide yields weakly coupled and lossy plasmonic modes in the mid and long wave infrared range. This is one of the major reasons for the rise in popularity of surface phonon polariton (SPhP) waveguides in recent research and micro-fabrication pursuit. Silicon carbide (SiC) is a good candidate in SPhP waveguides since it has negative dielectric permittivity in the long-wave infrared (LWIR) spectral region, indicative that coupling to surface phonon polaritons is realizable. Introducing surface phonon polaritons for waveguiding provides good modal confinement and enhanced propagation length. A hybrid waveguide structure at long-wave infrared (LWIR) is demonstrated in which an eigenmode solver approach in Ansys HFSS was applied. The effect of a three layer configuration i.e., silicon wire on a benzocyclobutene (BCB) dielectric slab on SiC, and the effects of varying their dimensions on the modal field distribution and on the propagation length, is presented.

  15. Surface functionalization and biomedical applications based on SiC

    Energy Technology Data Exchange (ETDEWEB)

    Yakimova, R; Petoral, R M Jr; Yazdi, G R; Vahlberg, C; Spetz, A Lloyd; Uvdal, K [Department of Physics, Chemistry and Biology, Linkoeping University, SE-58183 Linkoeping (Sweden)

    2007-10-21

    The search for materials and systems, capable of operating long term under physiological conditions, has been a strategy for many research groups during the past years. Silicon carbide (SiC) is a material, which can meet the demands due to its high biocompatibility, high inertness to biological tissues and to aggressive environment, and the possibility to make all types of electronic devices. This paper reviews progress in biomedical and biosensor related research on SiC. For example, less biofouling and platelet aggregation when exposed to blood is taken advantage of in a variety of medical implantable materials while the robust semiconducting properties can be explored in surface functionalized bioelectronic devices. (review article)

  16. Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions

    International Nuclear Information System (INIS)

    Lulli, G.; Albertazzi, E.; Bianconi, M.; Ferri, M.

    2003-01-01

    Silicon on insulator layers doped with 8x10 20 As cm -3 and thermally equilibrated at 1100 deg. C, have been irradiated with 2 MeV Si + ions. Rutherford backscattering-channeling analysis shows an increase in As disorder upon irradiation significantly larger than the increase in Si disorder, while electrical measurements show a large decrease in electrical activation. Monte Carlo simulation of channeling angular scans suggests that the enhanced As disorder effect is due to the preferential relocation of dopant atoms slightly displaced from lattice sites, which appear the main reason responsible for the electrical deactivation in the unirradiated sample and are believed to be in the form of As-vacancy clusters. Upon 600 deg. C 15 s annealing, the As atoms randomly relocated by ion irradiation almost completely recover their original configuration, probably capturing vacancies and forming, again, the complexes dissociated by ion irradiation

  17. Hierarchical architectured NiS@SiO2 nanoparticles enveloped in graphene sheets as anode material for lithium ion batteries

    International Nuclear Information System (INIS)

    Zhang, Zijia; Zhao, Hailei; Zeng, Zhipeng; Gao, Chunhui; Wang, Jie; Xia, Qing

    2015-01-01

    Highlights: • NiS@SiO 2 /graphene is prepared by a simple electrostatic attraction route. • NiS@SiO 2 /graphene presents nano-porous and hierarchical core-shell structure. • Superior cyclic stability and excellent rate capability are achieved. - Abstract: A well-designed hierarchical architecture NiS@SiO 2 /graphene is prepared through electrostatic self-assembly between (3-aminopropyl) triethoxysilane (APTES)-modified NiS and graphene in aqueous solutions at room temperature. The obtained composite possesses a unique structure with SiO 2 ultrasmall nanoparticles (3–5 nm) derived from the pyrolysis of APTES homogeneously anchored on the surface of NiS nanoparticles (100 nm), forming NiS@SiO 2 core-shell hybrid particles, which are well enveloped in graphene sheets. The SiO 2 nanoparticles act as pillars to form open space between graphene sheets and NiS particles, which can buffer the volume change and afford easy electrolyte-wetting and fast lithium ion transport channels. The graphene sheets can not only significantly enhance the overall electrical conductivity of the NiS@SiO 2 /graphene electrode, but also serve as a blanket to wrap NiS particle and so as to avert its exfoliation from electrode due to large volume change during cycling. The prepared NiS@SiO 2 /graphene nanocomposite exhibits high reversible capacity (∼750 mAh g −1 for 100 cycles), remarkable cycling stability and impressive rate capability

  18. Statistical characterization of surface defects created by Ar ion bombardment of crystalline silicon

    International Nuclear Information System (INIS)

    Ghazisaeidi, M.; Freund, J. B.; Johnson, H. T.

    2008-01-01

    Ion bombardment of crystalline silicon targets induces pattern formation by the creation of mobile surface species that participate in forming nanometer-scale structures. The formation of these mobile species on a Si(001) surface, caused by sub-keV argon ion bombardment, is investigated through molecular dynamics simulation of Stillinger-Weber [Phys. Rev. B 31, 5262 (1985)] silicon. Specific criteria for identifying and classifying these mobile atoms based on their energy and coordination number are developed. The mobile species are categorized based on these criteria and their average concentrations are calculated

  19. A high-performance alginate hydrogel binder for the Si/C anode of a Li-ion battery.

    Science.gov (United States)

    Liu, Jie; Zhang, Qian; Wu, Zhan-Yu; Wu, Jiao-Hong; Li, Jun-Tao; Huang, Ling; Sun, Shi-Gang

    2014-06-18

    An alginate hydrogel binder is prepared through the cross linking effect of Na alginate with Ca(2+) ions, which leads to a remarkable improvement in the electrochemical performance of the Si/C anode of a Li-ion battery.

  20. Surface smoothening and compaction of silica glass under dynamic negative ion mixing

    International Nuclear Information System (INIS)

    Okubo, N.; Takeda, Y.; Amekura, H.; Zhao, J.P.; Gritsyna, V.T.; Kishimoto, N.

    2001-01-01

    A dynamic mixing method has been developed to fabricate thick insulator films containing metal nanoparticles. The fabrication process consists of negative ion mixing/implantation and vacuum deposition of the matrix material. Negative Cu ions of 60 keV irradiated a silica substrate at a dose rate 5-30 μA/cm 2 and a simultaneous evaporation of silica glass, at an evaporation rate 0.2-0.4 nm/s, produced thick films up to 500 nm. The surface of the samples was greatly smoothened by the dynamic negative-ion mixing (DNIM) method, as compared to that of evaporated films without ion irradiation. The frequency of the Si-O-Si stretching vibration mode of the DNIM samples became smaller than that of the silica glass substrates. Optical absorbance of the samples, particularly around Cu plasmon resonance, was significantly dependent on the Cu dose rate. The results indicate that the ion co-irradiation induces not only surface smoothening but also a compact network of the SiO 2 matrix

  1. Site-specific Pt deposition and etching on electrically and thermally isolated SiO2 micro-disk surfaces

    International Nuclear Information System (INIS)

    Saraf, Laxmikant V

    2010-01-01

    Electrically and thermally isolated surfaces are crucial for improving the detection sensitivity of microelectronic sensors. The site-specific in situ growth of Pt nano-rods on thermally and electrically isolated SiO 2 micro-disks using wet chemical etching and a focused ion/electron dual beam (FIB-SEM) is demonstrated. Fabrication of an array of micro-cavities on top of a micro-disk is also demonstrated. The FIB source is utilized to fabricate through-holes in the micro-disks. Due to the amorphous nature of SiO 2 micro-disks, the Ga implantation possibly modifies through-hole sidewall surface chemistry rather than affecting its transport properties. Some sensor design concepts based on micro-fabrication of SiO 2 micro-disks utilizing thermally and electrically isolated surfaces are discussed from the viewpoint of applications in photonics and bio-sensing.

  2. Au L-shell ionization by Si and S ions

    International Nuclear Information System (INIS)

    Berinde, A.; Ciortea, C.; Enulescu, A.; Fluerasu, D.; Piticu, I.; Zoran, V.; Trautmann, D.

    1984-01-01

    We present the following experimental results on Au L-shell ionization: (1) in the bombarding energy range 0.25-2.5 MeV/u, absolute X-ray yields and the L 3 -vacancy integral alignment for Si, and cross section ratios for Si and S as projectiles; (2) at 32 MeV sulphur energy, subshell ionization probability ratios and the components A 20 (b) and A 22 (b) of the statistical tensor describing the L 3 -vacancy for impact parameters b=20-450 fm. A comparison of the data to SCA calcualtions reveals, except perhaps for the differential alignment, important discrepancies relative to the theoretical predictions. (orig./BRB)

  3. Indium tin oxide surface smoothing by gas cluster ion beam

    CERN Document Server

    Song, J H; Choi, W K

    2002-01-01

    CO sub 2 cluster ions are irradiated at the acceleration voltage of 25 kV to remove hillocks on indium tin oxide (ITO) surfaces and thus to attain highly smooth surfaces. CO sub 2 monomer ions are also bombarded on the ITO surfaces at the same acceleration voltage to compare sputtering phenomena. From the atomic force microscope results, the irradiation of monomer ions makes the hillocks sharper and the surfaces rougher from 1.31 to 1.6 nm in roughness. On the other hand, the irradiation of CO sub 2 cluster ions reduces the height of hillocks and planarize the ITO surfaces as smooth as 0.92 nm in roughness. This discrepancy could be explained by large lateral sputtering yield of the cluster ions and re-deposition of sputtered particles by the impact of the cluster ions on surfaces.

  4. Electrochemical performance and interfacial investigation on Si composite anode for lithium ion batteries in full cell

    Science.gov (United States)

    Shobukawa, Hitoshi; Alvarado, Judith; Yang, Yangyuchen; Meng, Ying Shirley

    2017-08-01

    Lithium ion batteries (LIBs) containing silicon (Si) as a negative electrode have gained much attention recently because they deliver high energy density. However, the commercialization of LIBs with Si anode is limited due to the unstable electrochemical performance associated with expansion and contraction during electrochemical cycling. This study investigates the electrochemical performance and degradation mechanism of a full cell containing Si composite anode and LiFePO4 (lithium iron phosphate (LFP)) cathode. Enhanced electrochemical cycling performance is observed when the full cell is cycled with fluoroethylene carbonate (FEC) additive compared to the standard electrolyte. To understand the improvement in the electrochemical performance, x-ray photoelectron spectroscopy (XPS), cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and scanning electron microscopy (SEM) are used. Based on the electrochemical behavior, FEC improves the reversibility of lithium ion diffusion into the solid electrolyte interphase (SEI) on the Si composite anode. Moreover, XPS analysis demonstrates that the SEI composition generated from the addition of FEC consists of a large amount of LiF and less carbonate species, which leads to better capacity retention over 40 cycles. The effective SEI successively yields more stable capacity retention and enhances the reversibility of lithium ion diffusion through the interphase of the Si anode, even at higher discharge rate. This study contributes to a basic comprehension of electrochemical performance and SEI formation of LIB full cells with a high loading Si composite anode.

  5. Transition metal swift heavy ion implantation on 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Ali, A. Ashraf; Kumar, J. [Crystal Growth Centre, Anna University, Chennai 600 025 (India); Ramakrishnan, V. [Indian Institute of Science Education and Research, Thiruvanthapuram (India); Asokan, K. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)

    2016-03-01

    This work reports on the realization of Quantum Ring (QR) and Quantum Dot (QD) like structures on 4H-SiC through SHI implantation and on their Raman studies. 4H-SiC is SHI implanted with Transition Metal (TM) Ni ion at different fluences. It is observed that a vibrational mode emerges as the result of Ni ion implantation. The E{sub 2} (TO) and the A{sub 1} (LO) are suppressed as the fluence increases. In this paper Raman and AFM studies have been performed at room temperature and the queer anomalies are addressed so new devices can be fabricated.

  6. Transition metal swift heavy ion implantation on 4H-SiC

    Science.gov (United States)

    Ali, A. Ashraf; Kumar, J.; Ramakrishnan, V.; Asokan, K.

    2016-03-01

    This work reports on the realization of Quantum Ring (QR) and Quantum Dot (QD) like structures on 4H-SiC through SHI implantation and on their Raman studies. 4H-SiC is SHI implanted with Transition Metal (TM) Ni ion at different fluences. It is observed that a vibrational mode emerges as the result of Ni ion implantation. The E2 (TO) and the A1 (LO) are suppressed as the fluence increases. In this paper Raman and AFM studies have been performed at room temperature and the queer anomalies are addressed so new devices can be fabricated.

  7. Effects of Ga ion irradiation on growth of GaN on SiN substrates by electron cyclotron resonance-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yanagisawa, J. [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan) and Center for Quantum Science and Technology under Extreme Conditions, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan) and CREST-JST, Kawaguchi Center Building, 4-1-8, Honcho, Kawaguchi, Saitama 332-0012 (Japan)]. E-mail: yanagisawa@ee.es.osaka-u.ac.jp; Matsumoto, H. [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan); Fukuyama, T. [Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology, 5-16-1 Omiya, Asahi-ku, Osaka 535-8585 (Japan); Shiraishi, Y. [Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology, 5-16-1 Omiya, Asahi-ku, Osaka 535-8585 (Japan); Yodo, T. [Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology, 5-16-1 Omiya, Asahi-ku, Osaka 535-8585 (Japan); Akasaka, Y. [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan)

    2007-04-15

    The possibility of forming GaN layers on Ga-implanted SiN surfaces was investigated using electron cyclotron resonance-assisted molecular beam epitaxy (MBE). It is found that the GaN layer initially formed on the SiN surface by Ga implantation at room temperature was amorphous-like, but become to polycrystalline after annealing at 650 deg. C for 3 min in vacuum. After the MBE growth of GaN, a grain structure of h-GaN was observed on the Ga-implanted SiN surface. The crystallinity of the GaN grown was, however, decreased upon increasing the Ga ion fluence on the SiN surface, which might be due, at least partly, to the formation of Ga clusters by the excess Ga implanted. The present results indicate the possibility of forming patterned GaN layers on SiN by selective Ga implantation on the SiN substrate, using a focused ion beam.

  8. Pb chains on ordered Si(3 3 5) surface

    International Nuclear Information System (INIS)

    Kisiel, M.; Skrobas, K.; Zdyb, R.; Mazurek, P.; Jalochowski, M.

    2007-01-01

    The electronic band structure of the Si(3 3 5)-Au surface decorated with Pb atoms was studied with angle resolved photoelectron spectroscopy (ARPES) in ultra high vacuum (UHV) conditions. The photoemission spectra were measured in two perpendicular directions, along and across the steps. In the direction parallel to the step edges the ARPES spectra show strongly dispersive electron energy band while in the perpendicular direction there is no electronic dispersion at all. This confirms one-dimensional character of the system. The theoretical band dispersion calculated within a tight-binding model was fitted to that obtained from the experiment

  9. Graphene surface plasmon bandgap based on two dimensional Si gratings

    Directory of Open Access Journals (Sweden)

    Yueke Wang

    2017-11-01

    Full Text Available A graphene/Si system, which is composed of a two-dimensional subwavelength silicon gratings and a graphene sheet, is designed to realize the complete band gap in infrared region for graphene surface plasmons (GSPs theoretically. The complete band gap originates from the strong scatterings, which is caused by the periodical distribution of effective refractive index. The band structure has been calculated using the plane wave expansion method, and full wave numerical simulations are conducted by finite element method. Thanks to the tunable permittivity of graphene, the band structure can be easily tuned, which provides a way to manipulate in-plane GSPs’ propagation.

  10. Pulsed laser deposited Si on multilayer graphene as anode material for lithium ion batteries

    Directory of Open Access Journals (Sweden)

    Gouri Radhakrishnan

    2013-12-01

    Full Text Available Pulsed laser deposition and chemical vapor deposition were used to deposit very thin silicon on multilayer graphene (MLG on a nickel foam substrate for application as an anode material for lithium ion batteries. The as-grown material was directly fabricated into an anode without a binder, and tested in a half-cell configuration. Even under stressful voltage limits that accelerate degradation, the Si-MLG films displayed higher stability than Si-only electrodes. Post-cycling images of the anodes reveal the differences between the two material systems and emphasize the role of the graphene layers in improving adhesion and electrochemical stability of the Si.

  11. Molecular dynamics simulation of ion-beam-amorphization of Si, Ge and GaAs

    CERN Document Server

    Nord, J D; Keinonen, J

    2002-01-01

    We use molecular dynamics simulations to study ion-irradiation-induced amorphization in Si, Ge and GaAs using several different interatomic force models. We find that the coordination number is higher, and the average bond length longer, for the irradiated amorphous structures than for the molten ones in Si and Ge. For amorphous GaAs, we suggest that longer Ga-Ga bonds, also present in pure Ga, are produced during the irradiation. In Si the amorphization is found to proceed via growth of amorphous regions, and low energy recoils are found to induce athermal recrystallization during irradiation.

  12. Current Progress of Si/Graphene Nanocomposites for Lithium-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Yinjie Cen

    2018-03-01

    Full Text Available The demand for high performance lithium-ion batteries (LIBs is increasing due to widespread use of portable devices and electric vehicles. Silicon (Si is one of the most attractive candidate anode materials for next generation LIBs. However, the high-volume change (>300% during lithium ion alloying/de-alloying leads to poor cycle life. When Si is used as the anode, conductive carbon is needed to provide the necessary conductivity. However, the traditional carbon coating method could not overcome the challenges of pulverization and unstable Solid Electrolyte Interphase (SEI layer during long-term cycling. Since 2010, Si/Graphene composites have been vigorously studied in hopes of providing a material with better cycling performance. This paper reviews current progress of Si/Graphene nanocomposites in LIBs. Different fabrication methods have been studied to synthesize Si/Graphene nanocomposites with promising electrochemical performances. Graphene plays a key enabling role in Si/Graphene anodes. However, the desired properties of graphene for this application have not been systematically studied and understood. Further systematic investigation of the desired graphene properties is suggested to better control the Si/Graphene anode performance.

  13. Plasma processing of the Si(0 0 1) surface for tuning SPR of Au/Si-based plasmonic nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Giangregorio, Maria M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)]. E-mail: michelaria.giangregorio@ba.imip.cnr.it; Losurdo, Maria [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy); Sacchetti, Alberto [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy); Capezzuto, Pio [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy); Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)

    2006-12-15

    Au nanoclusters have been deposited on Si(0 0 1) surfaces by sputtering of a metallic Au target using an Ar plasma. Different wet and dry treatments of the Si(0 0 1) surface, including dipping in HF solution and exposure to H{sub 2} and N{sub 2} plasmas, have been applied and the effects of these treatments on the Au nanoparticles/Si interface, the Au nanoclusters aspect ratio and the surface plasmon resonance (SPR) energy and amplitude are investigated exploiting spectroscopic ellipsometry and atomic force microscopy. It is found that the Au nanoclusters aspect ratio depends on the extent of the Au-Si intermixing. The thicker the Au-Si interface layer, the larger the Au nanoparticles aspect ratio and the red-shift of the SPR peak. Furthermore, SiO{sub 2} and the H{sub 2} plasma treatment inhibit the Si-Au intermixing, while HF-dipping and the N{sub 2} plasma treatment favour Au-Si intermixing, yielding silicide formation which increases the Si wetting by Au.

  14. Mixing induced by swift heavy ion irradiation at Fe/Si interface

    Indian Academy of Sciences (India)

    Unknown

    Abstract. The present work deals with the mixing of metal and silicon by swift heavy ions in high-energy range. Threshold value for the defect creation in metal Fe calculated was found to be ~ 40 keV/nm. A thin film of Fe (10 nm) was deposited on Si (100) at a pressure of 4 × 10–8 Torr and was irradiated with 95 MeV Au ions ...

  15. Ion-induced adhesion enhancement of Ni films on polyester: Si intermediate layer and 84Kr + implantation

    Science.gov (United States)

    Galuska, A. A.

    1990-02-01

    The influence of a 7 nm Si intermediate layer and 84Kr + implantation on the adhesion of 30 nm Ni films on poly[ethylene terephthalate] (PET) substrates was examined. The objective was to determine if the large (a factor of 20) adhesion increases previously observed for 28Si + implanted Ni/PET could be duplicated using a Si intermediate layer and inert gas ion mixing. Ni/Si/PET specimens were implanted with 84Kr + at substrate temperatures below 100°C to avoid polymer degradation. Substantial bubble and void formation was observed in the implanted specimens. After 1 × 10 16 Kr/cm 2 implantation, a buildup of oxygen in the Si intermediate layer was observed. The Ni that was originally present in the Si layer diffused out of the oxidized Si into the Ni overlayer, leaving a SiO x layer. This oxidized Si layer formed sharp interfaces with both the Ni films and PET substrates. X-ray photoelectron spectroscopy (XPS) analysis shows that the Ni/PET interfacial region consisted of a mixture of Ni 2Si and SiO before ion mixing and a discrete SiO 2 layer after mixing. Adhesion testing of the as-deposited and ion mixed films showed no ion-induced adhesion enhancement. It was concluded that in order to enhance the adhesion of Ni films on PET (or other oxygenated polymers) that the reactive species (Si) must be implanted into both the Ni film and the PET substrate.

  16. A problem finding in calibration of Si(Au) surface-barrier semiconductor detector and a simple resolved method

    International Nuclear Information System (INIS)

    Song Zhangyong; Ruan Fangfang; Lu Rongchun; Chinese Academy of Sccience, Beijing; Yang Zhihu; Tan Jilian; Shao Caojie; Cai Xiaohong; Zhang Hongqiang; Shao Jianxiong; Cui Ying; Xie Jiangshan; Gao Zhimin

    2007-01-01

    In calibration of Si(Au) surface-barrier semiconductor detector, we find the peak-channel of 241 Am standard radioactive source shift with the position and the size of incident window. The reason may be result from the non-uniformity of Au-layer plated on Si-layer, because it may increase the probability of electron-vacancy pair recombination, but the exact reason is not clear. Dut to this problem is disadvantage to heavy ion-atom impact experiment; we resolve it by fixing up the position and the size of incident window and calibrating two sets of spectrometers, which placed symmetrically in the target room. Thus, this two set of apparatus can measure the back-scattered ions simultaneously in ion-atom impact experiment. We could obtain reliable experimental results by comparing with the two back-scattering spectra. (authors)

  17. Experimental and Theoretical Study of the Rotation of Si Ad-dimers on the Si(100) Surface

    DEFF Research Database (Denmark)

    Swartzentruber, B. S.; Smith, A. P.; Jonsson, Hannes

    1996-01-01

    Scanning tunneling microscopy measurements and first principles density functional theory calculations are used to study the rate of the rotational transition of Si ad-dimers on top of the surface dimer rows of Si(100). The rotation rate and the relative population of the two stable orientations ...

  18. Mechanical properties of 6H-SiC irradiated by neutron and MeV heavy ions: A nanoindentation and finite element method study

    Science.gov (United States)

    Chen, Xiaofei; Zhou, Wei; Zhang, Xuxin; Feng, Qijie; Zheng, Jian; Liu, Xiankun; Tang, Bin; Li, Jiangbo; Xue, Jianming; Peng, Shuming

    2018-01-01

    Understanding the mechanical properties of structural materials under an irradiation environment stands as a major challenge for developing advanced nuclear systems. In this paper, the mechanical properties, including the Young's modulus, yield stress, and hardness, of SiC samples irradiated by neutron and heavy ions (3 MeV C and Si ions) have been investigated by nanoindentation measurement. When the load-depth curves were analyzed by the widely used Oliver-Pharr method, for the samples irradiated at the same displacement damage level (0.1 and 0.2 dpa), both the elastic modulus and hardness of the ion irradiated SiC are significantly higher compared with those of neutron irradiated samples. The discrepancy is mainly attributed to the irradiation induced surface lateral stress in ion irradiated samples, which cannot be taken into account for the Oliver-Pharr method. After carefully considering this effect by the finite element method in simulating the load-depth curves, both the Young's modulus and yield stress of ion irradiated samples agree well with those of neutron irradiated samples. This study reveals that by the combined method of nanoindentation and finite element, the mechanical properties, including the Young's modulus, yield stress and hardness, for neutron irradiated SiC can be reasonably evaluated by MeV heavy ion irradiation.

  19. Plasma-laser ion discrimination by TOF technique applied to coupled SiC detectors.

    Science.gov (United States)

    Cavallaro, Salvatore

    2018-01-01

    The rate estimation of nuclear reactions induced in high intensity laser-target interaction (≥1016 W/cm2), is strongly depending on the neutron detection efficiency and ion charge discrimination, according to particles involved in exit open-channels. Ion discrimination is basically performed by means of analysis of pits observed on track detector, which is critically dependent on calibration and/or fast TOF devices based on SiC and diamond detectors. Last setup is used to determine the ion energy and to obtain a rough estimation of yields. However, for each TOF interval, the dependence of yield from the energy deposited in the detector sensitive region, introduces a distortion in the ion spectra. Moreover, if two ion species are present in the same spectrum, the discrimination of their contribution is not attainable. In this paper a new method is described which allows to discriminate the contribution of two ion species in the wide energy range of nuclear reactions induced in laser-target interactions. The method is based on charge response of two TOF-SiC detectors, of suitable thicknesses, placed in adjacent positions. In presence of two ion species, the response of the detectors, associated with different energy losses, can determine the ion specific contribution to each TOF interval.

  20. Study on surface modification of M2 steel induced by Cu ions and Al ions implantation

    International Nuclear Information System (INIS)

    Wang Chao; Liu Zhengmin

    2001-01-01

    Changes of surface hardness and wear resistances in M2 type steel implanted by Cu Al ions were reported. The dependence of surface strengthening on ion species and dose was studied by X-ray diffraction (XRD) and Rutherford Backscattering Spectroscopy (RBS) for microhardness and wear resistances measurement. It is shown that both hardness and wear resistance increases apparently after ion implantation. XRD analysis indicates that different phases formed after Al Cu ions implanted. It is also suggested that Cu, Al ions have different role in surface strengthening

  1. Ion bombardment effect on surface state of metal

    International Nuclear Information System (INIS)

    Vaulin, E.P.; Georgieva, N.E.; Martynenko, T.P.

    1990-01-01

    The effect of slow argon ion bombardment on the surface microstructure of polycrystalline copper as well as the effect of surface state on sputtering of D-16 polycrystalline alloy are experimentally studied. Reduction of copper surface roughness is observed. It is shown that the D-16 alloy sputtering coefficient is sensitive to the surface state within the limits of the destructed surface layer

  2. Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

    Science.gov (United States)

    Tarasov, I. A.; Visotin, M. A.; Aleksandrovsky, A. S.; Kosyrev, N. N.; Yakovlev, I. A.; Molokeev, M. S.; Lukyanenko, A. V.; Krylov, A. S.; Fedorov, A. S.; Varnakov, S. N.; Ovchinnikov, S. G.

    2017-10-01

    This work investigates the Si/Fe flux ratio (2 and 0.34) influence on the growth of β-FeSi2 polycrystalline thin films on Si(100) substrate at 630 °C. Lattice deformations for the films obtained are confirmed by X-ray diffraction analysis (XRD). The volume unit cell deviation from that of β-FeSi2 single crystal are 1.99% and 1.1% for Si/Fe =2 and Si/Fe =0.34, respectively. Absorption measurements show that the indirect transition ( 0.704 eV) of the Si/Fe =0.34 sample changes to the direct transition with a bandgap value of 0.816 eV for the sample prepared at Si/Fe =2. The absorption spectrum of the Si/Fe =0.34 sample exhibits an additional peak located below the bandgap energy value with the absorption maximum of 0.36 eV. Surface magneto-optic Kerr effect (SMOKE) measurements detect the ferromagnetic behavior of the β-FeSi2 polycrystalline films grown at Si/Fe =0.34 at T=10 K, but no ferromagnetism was observed in the samples grown at Si/Fe =2. Theoretical calculations refute that the cell deformation can cause the emergence of magnetization and argue that the origin of the ferromagnetism, as well as the lower absorption peak, is β-FeSi2 stoichiometry deviations. Raman spectroscopy measurements evidence that the film obtained at Si/Fe flux ratio equal to 0.34 has the better crystallinity than the Si/Fe =2 sample.

  3. Photoluminescence properties of ion-beam-synthesized β-FeSi2 nanocrystals in Si

    Science.gov (United States)

    Nakajima, T.; Ichikawa, T.; Matsukura, B.; Maeda, Y.

    We have investigated photoluminescence (PL) properties of β-FeSi2 nanocrystals in Si crystals. The PL spectrum could be separated into three major A, B and C bands and some minor bands. The B and C band (side band) spectra with a Gaussian function shape could be deduced from subtraction of the A band spectra with a Lorentzian function shape from the whole PL spectrum observed. It was found that the temperature dependence of the C band emission was quite different from that of the intrinsic band (A band) emission which follows a Varshini empirical formula. The C band emission may be originated from two competition processes which are switched at 70 K.

  4. Improving the performance of si-based li-ion battery anodes by utilizing phosphorene encapsulation

    NARCIS (Netherlands)

    Peng, B.; Xu, Y.; Mulder, F.M.

    2017-01-01

    Si-based anode materials in Li-ion batteries (LIBs) suffer from severe volume expansion/contraction during repetitive discharge/charge, which results in the pulverization of active materials, continuous growth of solid electrolyte interface (SE!) layers, loss of electrical conduction, and,

  5. Cracking in Si-based anodes for Li-ion batteries

    NARCIS (Netherlands)

    Aifantis, KE; Dempsey, JP; Hackney, SA

    2005-01-01

    In attempts to increase the anode capacity of rechargeable Li-ion batteries, composite materials with micro- and nano-scale domains of Li active material surrounded by Li inactive material are being investigated. Materials such as Si, Al and Sn that provide capacities between 900 and 4000 mAh g(-1)

  6. Self-standing silicon-carbon nanotube/graphene by a scalable in situ approach from low-cost Al-Si alloy powder for lithium ion batteries

    Science.gov (United States)

    Cai, Hongyan; Han, Kai; Jiang, Heng; Wang, Jingwen; Liu, Hui

    2017-10-01

    Silicon/carbon (Si/C) composite shows great potential to replace graphite as lithium-ion battery (LIB) anode owing to its high theoretical capacity. Exploring low-cost scalable approach for synthesizing Si/C composites with excellent electrochemical performance is critical for practical application of Si/C anodes. In this study, we rationally applied a scalable in situ approach to produce Si-carbon nanotube (Si-CNT) composite via acid etching of commercial inexpensive micro-sized Al-Si alloy powder and CNT mixture. In the Si-CNT composite, ∼10 nm Si particles were uniformly deposited on the CNT surface. After combining with graphene sheets, a flexible self-standing Si-CNT/graphene paper was fabricated with three-dimensional (3D) sandwich-like structure. The in situ presence of CNT during acid-etching process shows remarkable two advantages: providing deposition sites for Si atoms to restrain agglomeration of Si nanoparticles after Al removal from Al-Si alloy powder, increasing the cross-layer conductivity of the paper anode to provide excellent conductive contact sites for each Si nanoparticles. When used as binder-free anode for LIBs without any further treatment, in situ addition of CNT especially plays important role to improve the initial electrochemical activity of Si nanoparticles synthesized from low-cost Al-Si alloy powder, thus resulting in about twice higher capacity than Si/G paper anode. The self-standing Si-CNT/graphene paper anode exhibited a high specific capacity of 1100 mAh g-1 even after 100 cycles at 200 mA g-1 current density with a Coulombic efficiency of >99%. It also showed remarkable rate capability improvement compared to Si/G paper without CNT. The present work demonstrates a low-cost scalable in situ approach from commercial micro-sized Al-Si alloy powder for Si-based composites with specific nanostructure. The Si-CNT/graphene paper is a promising anode candidate with high capacity and cycling stability for LIBs, especially for the

  7. Synergistic effects of iodine and silver ions co-implanted in 6H-SiC

    Science.gov (United States)

    Kuhudzai, R. J.; Malherbe, J. B.; Hlatshwayo, T. T.; van der Berg, N. G.; Devaraj, A.; Zhu, Z.; Nandasiri, M.

    2015-12-01

    Motivated by the aim of understanding the release of fission products through the SiC coating of fuel kernels in modern high temperature nuclear reactors, a fundamental investigation is conducted to understand the synergistic effects of implanted silver (Ag) and iodine (I) in 6H-SiC. The implantation of the individual species, as well as the co-implantation of 360 keV ions of I and Ag at room temperature in 6H-SiC and their subsequent annealing behaviour has been investigated by Secondary Ion Mass Spectrometry (SIMS), Atom Probe Tomography (APT) and X-ray Photoelectron Spectroscopy (XPS). SIMS and APT measurements indicated the presence of Ag in the co-implanted samples after annealing at 1500 °C for 30 h in sharp contrast to the samples implanted with Ag only. In samples implanted with Ag only, complete loss of the implanted Ag was observed. However, for I only implanted samples, some iodine was retained. APT of annealed co-implanted 6H-SiC showed clear spatial association of Ag and I clusters in SiC, which can be attributed to the observed I assisted retention of Ag after annealing. Such detailed studies will be necessary to identify the fundamental mechanism of fission products migration through SiC coatings.

  8. Surface Polarization Effects on Ion-Containing Emulsions

    Science.gov (United States)

    Shen, Meng; Li, Honghao; Olvera de la Cruz, Monica

    2017-09-01

    Surface polarization in ion-containing heterogeneous dielectric media such as cell media and emulsions is determined by and determines the positions of the ions. We compute the surface polarization self-consistently as the ions move and analyze their effects on the interactions between electro-neutral, ion-containing droplets using coarse-grained molecular dynamics simulations based on the true energy functional. For water droplets immersed in oil, the interdroplet interaction is attractive, and the surface polarization makes the major contribution. By contrast, for oil droplets in water, the ion-surface induced charge interaction is repulsive and counteracts the attraction between the ions, leading to a small attractive interaction between the droplets. This research improves our understanding of self-assembly in mixed phases such as metal extraction for recovering rare earth elements and nuclear waste as well as water purification.

  9. Two-dimensional Ag/SiO2 and Cu/SiO2 nanocomposite surface-relief grating couplers and their vertical input coupling properties

    Science.gov (United States)

    Wang, Jun; Mu, Xiaoyu; Wang, Gang; Liu, Changlong

    2017-11-01

    By etching two SiO2 optical waveguide slabs separately implanted with 90 keV Ag ions and 60 keV Cu ions at the same dose of 6 × 1016 cm-2, two-dimensional Ag/SiO2 and Cu/SiO2 nanocomposite surface-relief grating couplers with 600-nm periodicity and 100-nm thickness were fabricated, and their structural and vertical input coupling properties were investigated. Experimental results revealed that the two couplers could convert light beams at wavelengths of 620-880 nm into guided waves with different efficiencies, highlighting the special importance of metal nanoparticles (NPs). Further discussions also revealed that owing to the introduction of periodically distributed metal NPs, the periodical phase modification of the transmitted beam was enhanced drastically, and the nanocomposite veins could behave as efficient light scatterers. As a result, the two couplers were much larger in coupling efficiency than the NP-free one with identical morphological parameters. The above findings may be useful to construct thin and short but efficient surface-relief grating couplers on glass optical waveguides.

  10. {ital K}-shell vacancies carried by swift O and Si ions inside ferromagnetic hosts

    Energy Technology Data Exchange (ETDEWEB)

    Tribedi, L.C.; Prasad, K.G.; Tandon, P.N. [Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400 005 (India)

    1995-05-01

    The single and double {ital K}-shell vacancy fractions for swift O and Si ions inside Fe and Gd foils have been measured using the probe layer technique. The measurements are carried out at velocities varying from 7.5 to 13.5{ital v}{sub 0} for Si ions and at a velocity of 7.8{ital v}{sub 0} for oxygen ions ({ital v}{sub 0}={alpha}{ital c} where {alpha} is the fine-structure constant and {ital c} is the speed of light). It is shown that all such available data for light ions fall on a smooth curve when plotted against the reduced velocity of the ion. These values are used along with the existing transient magnetic field data to derive the electron spin polarization acquired by the ions traveling inside ferromagnetic hosts. The degree of polarization is shown to decrease with the atomic number of the ions. This observation is, however, in disagreement with recent theoretical calculations.

  11. Advanced surface polishing using gas cluster ion beams

    Science.gov (United States)

    Insepov, Z.; Hassanein, A.; Norem, J.; Swenson, D. R.

    2007-08-01

    The gas cluster ion beam (GCIB) treatment can be an important treatment for mitigation of the Q-slope in superconducting cavities. The existing surface smoothening methods were analyzed and a new surface polishing method was proposed based on employing extra-large gas cluster ions (X-GCIB).

  12. Argon ion beam interaction on polyethylene terephthalate surface by ...

    Indian Academy of Sciences (India)

    Polyethylene terephthalate surface treatment; Amirkabir plasma focus; plasma focus ... and ion-assisted coating [5], ion implantation and thermal surface treatment [6]. ..... after one month for steps (a) and (b). Therefore, in many applications it is suggested that the adhesion takes place immediately after plasma exposure to ...

  13. Catalyst-free synthesis of Si-SiOx core-shell nanowire anodes for high-rate and high-capacity lithium-ion batteries.

    Science.gov (United States)

    Lim, Kwan Woo; Lee, Jung-In; Yang, Jieun; Kim, Young-Ki; Jeong, Hu Young; Park, Soojin; Shin, Hyeon Suk

    2014-05-14

    Si-SiOx core-shell nanowires (NWs) ranging from 10 to 30 nm in diameter are prepared by a simple evaporation of silicon monoxide and control of substrate temperatures without any catalyst. The Si-SiOx NWs grown at 735 and 955 °C are strongly anchored to the Cu current collector by forming copper silicide at the interface between Si and Cu, and subsequently used as anodes in lithium-ion batteries, in which no binder or conducting materials are used. The Si-SiOx NWs anodes show excellent electrochemical performances in terms of capacity retention and rate capability. In particular, the Si-SiOx NW anode grown at 955 °C shows a reversible capacity of ∼1000 mAh g(-1) even at a high-rate of 50 C. This catalyst-free synthetic route of Si-SiOx NWs that are strongly anchored to the Cu current collector opens up an effective process for fabricating other high-capacity anodes in lithium-ion batteries (LIBs).

  14. Synergistic effects of iodine and silver ions co-implanted in 6H–SiC

    International Nuclear Information System (INIS)

    Kuhudzai, R.J.; Malherbe, J.B.; Hlatshwayo, T.T.; Berg, N.G. van der; Devaraj, A.; Zhu, Z.; Nandasiri, M.

    2015-01-01

    Motivated by the aim of understanding the release of fission products through the SiC coating of fuel kernels in modern high temperature nuclear reactors, a fundamental investigation is conducted to understand the synergistic effects of implanted silver (Ag) and iodine (I) in 6H–SiC. The implantation of the individual species, as well as the co-implantation of 360 keV ions of I and Ag at room temperature in 6H–SiC and their subsequent annealing behaviour has been investigated by Secondary Ion Mass Spectrometry (SIMS), Atom Probe Tomography (APT) and X-ray Photoelectron Spectroscopy (XPS). SIMS and APT measurements indicated the presence of Ag in the co-implanted samples after annealing at 1500 °C for 30 h in sharp contrast to the samples implanted with Ag only. In samples implanted with Ag only, complete loss of the implanted Ag was observed. However, for I only implanted samples, some iodine was retained. APT of annealed co-implanted 6H–SiC showed clear spatial association of Ag and I clusters in SiC, which can be attributed to the observed I assisted retention of Ag after annealing. Such detailed studies will be necessary to identify the fundamental mechanism of fission products migration through SiC coatings. - Highlights: • Co-implantation of Ag and I ions in 6H–SiC was performed. • Clear spatial association of Ag and I clusters observed after annealing. • Complete loss of Ag after high temperature annealing of silver only sample. • Iodine was retained in iodine only sample after high temperature annealing. • Iodine was found to play a role in the retention of Ag in the co-implanted samples.

  15. Dual Core-Shell Structured Si@SiOx@C Nanocomposite Synthesized via a One-Step Pyrolysis Method as a Highly Stable Anode Material for Lithium-Ion Batteries.

    Science.gov (United States)

    Jiang, Bolun; Zeng, Shi; Wang, Hui; Liu, Daotan; Qian, Jiangfeng; Cao, Yuliang; Yang, Hanxi; Ai, Xinping

    2016-11-23

    Silicon (Si) has been regarded as a promising high-capacity anode material for developing advanced lithium-ion batteries (LIBs), but the practical application of Si anodes is still unsuccessful mainly due to the insufficient cyclability. To deal with this issue, we propose a new route to construct a dual core-shell structured Si@SiO x @C nanocomposite by direct pyrolysis of poly(methyl methacrylate) (PMMA) polymer on the surface of Si nanoparticles. Since the PMMA polymers can be chemically bonded on the nano-Si surface through the interaction between ester group and Si surface group, and thermally decomposed in the subsequent pyrolysis process with their alkyl chains converted to carbon and the residue oxygen recombining with Si to form SiO x , the dual core-shell structure can be conveniently formed in a one-step procedure. Benefiting from the strong buffering effect of the SiO x interlayer and the efficient blocking action of dense outer carbon layer in preventing electrolyte permeation, the obtained nanocomposite demonstrates a high capacity of 1972 mA h g -1 , a stable cycling performance with a capacity retention of >1030 mA h g -1 over 500 cycles, and particularly a superiorly high Coulombic efficiency of >99.5% upon extended cycling, exhibiting a great promise for practical uses. More importantly, the synthetic method proposed in this work is facile and low cost, making it more suitable for large-scale production of high capacity anode for advanced LIBs.

  16. Comparative Study of Catalytic Oxidation of Ethanol to Acetaldehyde Using Fe(III Dispersed on Sb2O5 Grafted on SiO2 and on Untreated SiO2 Surfaces

    Directory of Open Access Journals (Sweden)

    Benvenutti Edilson V.

    1998-01-01

    Full Text Available Fe(III was supported on Sb(V oxide grafted on the silica gel surface and directly on the silica gel surface using ion-exchange and impregnation processes producing Fe/Sb/SiO2 and Fe/SiO2, respectively. The catalytic conversion of ethanol to acetaldehyde was much more efficient using Fe/Sb/SiO2 than Fe/SiO2 as catalyst. This higher efficiency of the former catalyst takes into account two aspects: a the new phase FeSbO4 formed when Fe/Sb/SiO2 is heat treated and, b it is higher dispersion on the matrix.

  17. Influence of Adhesive System on Performance of SiO/C Lithium-ion Battery

    Directory of Open Access Journals (Sweden)

    Teng Xin

    2015-01-01

    Full Text Available Silicon based anode material is turning into the research hot point of lithium-ion battery material field due to Si inside supporting higher capacity. Furthermore binder applied as major accessory material of anode system could bring anode material & current collector together, thus the influence given by binder system to battery performance becomes the key point. The paper describes the procedure of adopting commercial LiCoO2 SiO/C as composite material & electrolyte, with using styrene butadiene rubber and acrylic acid copolymer as binder to figure out lithium-ion battery with 2.5Ah, which is testified to present better performance on cold temperature & cycle life plus having a little bit swelling compared with the lithium-ion battery using only styrene butadiene rubber as binder.

  18. Channeling energy loss of O ions in Si The Bark as effect

    CERN Document Server

    Araujo, L L; Behar, M; Dias, J F; Santos, J H; Schiwietz, G

    2002-01-01

    In this work we report on measurements of channeling stopping powers of sup 1 sup 6 O ions along Si axial direction for the energy range between 250 keV/u and 1 MeV/u by using the Rutherford backscattering technique with separated by implanted oxygen targets. In connection with the recent developed unitary convolution approximation, we are able to extract the Barkas contribution to the energy loss with high precision. This effect is clearly separated from other processes and amounts to about 15%. The observed Barkas contribution from the valence-electron gas is in agreement with the Lindhard model for higher energies. However, in contrast to recent investigations for Li ions, the Barkas effect at the lowest energies seems to saturate, indicating other non-perturbative terms in the polarization field induced by the O ions in Si.

  19. MeV ion irradiation effects on the luminescence properties of Si-implanted SiO{sub 2}-thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chulapakorn, T.; Primetzhofer, D. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J.; Hallen, A. [Royal Institute of Technology (KTH), School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

    2016-12-15

    The effects of MeV heavy ion irradiation at varying fluence and flux on excess Si, introduced in SiO{sub 2} by keV ion implantation, are investigated by photoluminescence (PL). From the PL peak wavelength (λ) and decay lifetime (τ), two PL sources are distinguished: (i) quasi-direct recombination of excitons of Si-nanoparticles (SiNPs), appearing after thermal annealing (λ > 720 nm, τ ∝ μs), and (ii) fast-decay PL, possibly due to oxide-related defects (λ ∝ 575-690 nm, τ ∝ ns). The fast-decay PL (ii) observed before and after ion irradiation is induced by ion implantation. It is found that this fast-decay luminescence decreases for higher irradiation fluence of MeV heavy ions. After thermal annealing (forming SiNPs), the SiNP PL is reduced for samples irradiated by MeV heavy ions but found to stabilize at higher level for higher irradiation flux; the (ii) band vanishes as a result of annealing. The results are discussed in terms of the influence of electronic and nuclear stopping powers. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Towards modelling the vibrational signatures of functionalized surfaces: carboxylic acids on H-Si(111) surfaces

    Science.gov (United States)

    Giresse Tetsassi Feugmo, Conrard; Champagne, Benoît; Caudano, Yves; Cecchet, Francesca; Chabal, Yves J.; Liégeois, Vincent

    2012-03-01

    In this work, we investigate the adsorption process of two carboxylic acids (stearic and undecylenic) on a H-Si(111) surface via the calculation of structural and energy changes as well as the simulation of their IR and Raman spectra. The two molecules adsorb differently at the surface since the stearic acid simply physisorbs while the undecylenic acid undergoes a chemical reaction with the hydrogen atoms of the surface. This difference is observed in the change of geometry during the adsorption. Indeed, the chemisorption of the undecylenic acid has a bigger impact on the structure than the physisorption of the stearic acid. Consistently, the former is also characterized by a larger value of adsorption energy and a smaller value of the tilting angle with respect to the normal plane. For both the IR and Raman signatures, the spectra of both molecules adsorbed at the surface are in a first approximation the superposition of the spectra of the Si cluster and of the carboxylic acid considered individually. The main deviation from this simple observation is the peak of the stretching Si-H (ν(Si-H)) mode, which is split into two peaks upon adsorption. As expected, the splitting is bigger for the chemisorption than the physisorption. The modes corresponding to atomic displacements close to the adsorption site display a frequency upshift by a dozen wavenumbers. One can also see the disappearance of the peaks associated with the C=C double bond when the undecylenic acid chemisorbs at the surface. The Raman and IR spectra are complementary and one can observe here that the most active Raman modes are generally IR inactive. Two exceptions to this are the two ν(Si-H) modes which are active in both spectroscopies. Finally, we compare our simulated spectra with some experimental measurements and we find an overall good agreement.

  1. Towards modelling the vibrational signatures of functionalized surfaces: carboxylic acids on H-Si(111) surfaces

    International Nuclear Information System (INIS)

    Tetsassi Feugmo, Conrard Giresse; Champagne, Benoît; Liégeois, Vincent; Caudano, Yves; Cecchet, Francesca; Chabal, Yves J

    2012-01-01

    In this work, we investigate the adsorption process of two carboxylic acids (stearic and undecylenic) on a H-Si(111) surface via the calculation of structural and energy changes as well as the simulation of their IR and Raman spectra. The two molecules adsorb differently at the surface since the stearic acid simply physisorbs while the undecylenic acid undergoes a chemical reaction with the hydrogen atoms of the surface. This difference is observed in the change of geometry during the adsorption. Indeed, the chemisorption of the undecylenic acid has a bigger impact on the structure than the physisorption of the stearic acid. Consistently, the former is also characterized by a larger value of adsorption energy and a smaller value of the tilting angle with respect to the normal plane. For both the IR and Raman signatures, the spectra of both molecules adsorbed at the surface are in a first approximation the superposition of the spectra of the Si cluster and of the carboxylic acid considered individually. The main deviation from this simple observation is the peak of the stretching Si-H (ν(Si-H)) mode, which is split into two peaks upon adsorption. As expected, the splitting is bigger for the chemisorption than the physisorption. The modes corresponding to atomic displacements close to the adsorption site display a frequency upshift by a dozen wavenumbers. One can also see the disappearance of the peaks associated with the C=C double bond when the undecylenic acid chemisorbs at the surface. The Raman and IR spectra are complementary and one can observe here that the most active Raman modes are generally IR inactive. Two exceptions to this are the two ν(Si-H) modes which are active in both spectroscopies. Finally, we compare our simulated spectra with some experimental measurements and we find an overall good agreement. (paper)

  2. Surface noise analysis using a single-ion sensor

    Science.gov (United States)

    Daniilidis, N.; Gerber, S.; Bolloten, G.; Ramm, M.; Ransford, A.; Ulin-Avila, E.; Talukdar, I.; Häffner, H.

    2014-06-01

    We use a single-ion electric-field noise sensor in combination with in situ surface treatment and analysis tools, to investigate the relationship between electric-field noise from metal surfaces in vacuum and the composition of the surface. These experiments are performed in a setup that integrates ion trapping capabilities with surface analysis tools. We find that treatment of an aluminum-copper surface with energetic argon ions significantly reduces the level of room-temperature electric-field noise, but the surface does not need to be atomically clean to show noise levels comparable to those of the best cryogenic traps. The noise levels after treatment are low enough to allow fault-tolerant trapped-ion quantum information processing on a microfabricated surface trap at room temperature.

  3. Generation of H-, D- ions on composite surfaces with application to surface/plasma ion source systems

    International Nuclear Information System (INIS)

    Hiskes, J.R.; Karo, A.M.; Wimmer, E.; Freeman, A.J.; Chubb, S.R.

    1983-01-01

    We review some salient features of the experimental and theoretical data pertaining to hydrogen negative ion generation on minimum-work-function composite surfaces consisting of Cs/transition metal substrates. Cesium or hydrogen ion bombardment of a cesium-activated negatively-biased electrode exposed to a cesium-hydrogen discharge results in the release of hydrogen negative ions. These ions originate through desorbtion of hydrogen particles by incident cesium ions, desorbtion by incident hydrogen ions, and by backscattering of incident hydrogen. Each process is characterized by a specific energy and angular distribution. The calculation of ion formation in the crystal selvage region is discussed for different approximations to the surface potential. An ab initio, all-electron, local density functional model for the composite surface electronics is discussed

  4. Ion beam synthesis and characterization of yttrium silicide in Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Ayache, R. [Pharmacy Department, University of Batna, 05000 (Algeria)], E-mail: ayache_r@yahoo.fr; Bouabellou, A. [Laboratoire Couches Minces et Interfaces, Campus Chaab Errassas, Universite Mentouri de Constantine, 25000 (Algeria); Eichhorn, F.; Richter, E.; Muecklich, A. [Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden (Germany)

    2007-09-15

    Thin YSi{sub 2-x} layers are formed by 195 keV Y ion implantation in Si(111) substrates to a dose of 2 x 10{sup 17} Y{sup +}/cm{sup 2} at 500 deg. C followed by annealing in nitrogen atmosphere at different temperatures for 1 h. The investigation of the phase composition is carried out by Rutherford backscattering spectrometry (RBS), whereas the structural characterization is accomplished by means of both X-ray diffraction (XRD) pole figure and cross-sectional transmission electron microscopy (XTEM). The results show that the YSi{sub 2-x} layers grown on the Si has the epitaxial relationship of YSi{sub 2-x} (0 0 0 1)//Si(111) and YSi{sub 2-x} [1 1 - 2 0 ]//Si [110].

  5. Metastability of a-SiO{sub x}:H thin films for c-Si surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Serenelli, L., E-mail: luca.serenelli@enea.it [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Martini, L. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Imbimbo, L. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Asquini, R. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Menchini, F.; Izzi, M.; Tucci, M. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy)

    2017-01-15

    Highlights: • a-SiO{sub x}:H film deposition by RF-PECVD is optimized from SiH{sub 4}, CO{sub 2} and H{sub 2} gas mixture. • Metastability of a-SiO{sub x}:H/c-Si passivation is investigated under thermal annealing and UV exposure. • A correlation between passivation metastability and Si−H bonds is found by FTIR spectra. • A metastability model is proposed. - Abstract: The adoption of a-SiO{sub x}:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiN{sub x} on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiO{sub x}:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Si−H and Si−O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm{sup 2}. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiO{sub x}:H/c-Si/a-SiO{sub x}:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiO{sub x} passivation properties, was furthermore considered. In

  6. Si- and Sn-containing SiOCN-based nanocomposites as anode materials for lithium ion batteries. Synthesis, thermodynamic characterization and modeling

    Energy Technology Data Exchange (ETDEWEB)

    Rohrer, Jochen; Albe, Karsten [Technische Univ. Darmstadt (Germany). Materialmodellierung; Vrankovic, Dragoljub; Riedel, Ralf; Graczyk-Zajac, Magdalena [Technische Univ. Darmstadt (Germany). Disperse Feststoffe; Cupid, Damian; Seifert, Hans J. [Karlsruher Institut fuer Technologie, Eggenstein-Leopoldshafen (Germany). IAM - Angewandte Werkstoffphysik

    2017-11-15

    Novel nanocomposites consisting of silicon/tin nanoparticles (n-Si/n-Sn) embedded in silicon carbonitride (SiCN) or silicon oxycarbide (SiOC) ceramic matrices are investigated as possible anode materials for Li-ion batteries. The goal of our study is to exploit the large mass specific capacity of Si/Sn (3 579 mAh g{sup -1}/994 mAh g{sup -1}), while avoiding rapid capacity fading due to the large volume changes of Si/Sn during Li insertion. We show that a large amount (∝30-40 wt.%) of disordered carbon phase is dispersed within the SiOC/SiCN matrix and stabilizes the Si/Sn nanoparticles with respect to extended reversible lithium ion storage. Silicon nanocomposites are prepared by mixing of a polymeric precursor with commercial and ''home-synthesized'' crystalline and amorphous silicon. Tin nanocomposites, in contrast, are prepared using a single precursor approach, which allows the in-situ generation of Sn nanoparticles homogeneously dispersed within the SiOC host. The best electrochemical stability along with capacities of 600 - 700 mAh g{sup -1} is obtained when amorphous/porous silicon is used. Mechanisms contributing to the increase of storage capacity and the cycle stability are clarified by analyzing elemental composition, local solid-state structures, intercalation hosts and Li-ion mobility. Our work is supplemented by first-principles based atomistic modeling and thermochemical measurements.

  7. Tribology of silicon-thin-film-coated SiC ceramics and the effects of high energy ion irradiation

    International Nuclear Information System (INIS)

    Kohzaki, Masao; Noda, Shoji; Doi, Harua

    1990-01-01

    The sliding friction coefficients and specific wear of SiC ceramics coated with a silicon thin film (Si/SiC) with and without subsequent Ar + irradiation against a diamond pin were measured with a pin-on-disk tester at room temperature in laboratory air of approximately 50% relative humidity without oil lubrication for 40 h. The friction coefficient of Ar + -irradiated Si/SiC was about 0.05 with a normal load of 9.8 N and remained almost unchanged during the 40 h test, while that of SiC increased from 0.04 to 0.12 during the test. The silicon deposition also reduced the specific wear of SiC to less than one tenth of that of the uncoated SiC. Effectively no wear was detected in Si/SiC irradiated to doses of over 2x10 16 ions cm -2 . (orig.)

  8. Research Progress of Optical Fabrication and Surface-Microstructure Modification of SiC

    Directory of Open Access Journals (Sweden)

    Fang Jiang

    2012-01-01

    Full Text Available SiC has become the best candidate material for space mirror and optical devices due to a series of favorable physical and chemical properties. Fine surface optical quality with the surface roughness (RMS less than 1 nm is necessary for fine optical application. However, various defects are present in SiC ceramics, and it is very difficult to polish SiC ceramic matrix with the 1 nm RMS. Surface modification of SiC ceramics must be done on the SiC substrate. Four kinds of surface-modification routes including the hot pressed glass, the C/SiC clapping, SiC clapping, and Si clapping on SiC surface have been reported and reviewed here. The methods of surface modification, the mechanism of preparation, and the disadvantages and advantages are focused on in this paper. In our view, PVD Si is the best choice for surface modification of SiC mirror.

  9. The neon Auger spectrum produced by ion bombardment of aluminium and silicon surfaces

    International Nuclear Information System (INIS)

    Gallon, T.E.; Nixon, A.P.

    1992-01-01

    Measurements are reported of the Auger (autoionization) spectrum of Ne produced by bombarding A1 and Si surfaces with Ne + ions with energies in the range 400 eV to 5 keV. The shift in the Ne peak energies with incident ion energy is shown to follow a very simple Doppler model. The data are found to contain many small Auger peaks in addition to the two characteristic peaks recorded by previous workers. This new structure is shown to be consistent with gas-phase data and with measurements of the autoionizing states in Ne I. (Author)

  10. The role of nitrogen in luminescent Si nanoprecipitate formation during annealing of Si ion-implanted SiO sub 2 layers

    CERN Document Server

    Kachurin, G A; Zhuravlev, K S; Ruault, M O

    2001-01-01

    SiO sub 2 layers were implanted with 25 keV Si sup + and 13 keV N sup + ions with the doses of (1-4) x 10 sup 1 sup 6 cm sup - sup 2 and (0.2-2) x 10 sup 1 sup 6 cm sup - sup 2 , respectively. Then the samples were annealed at 900-1100 deg C to form luminescent silicon nanoprecipitates. The nitrogen effect on the process is controlled by photoluminescence spectra. It is found out that the photoluminescence intensity increases considerably at the appropriate ratio between silicon and nitrogen. It has been concluded that the interaction of nitrogen with excessive silicon results in increasing the number of precipitation centers. This raises the nanocrystals number and reduces their mean size

  11. Tailoring the nickel nanoparticles anchored on the surface of Fe3O4@SiO2 spheres for nanocatalysis

    Science.gov (United States)

    Ding, Lei; Zhang, Min; Zhang, Yanwei; Yang, Jinbo; Zheng, Jing; Hayat, Tasawar; Alharbi, Njud S.; Xu, Jingli

    2017-08-01

    Herein, we report an efficient and universal strategy for synthesizing a unique triple-shell structured Fe3O4@SiO2@C-Ni hybrid composite. Firstly, the Fe3O4 cores were synthesized by hydrothermal reaction, and sequentially coated with SiO2 and a thin layer of nickel-ion-doped resin-formaldehyde (RF-Ni2+) using an extended Stöber method. This was followed by carbonization to produce the Fe3O4@SiO2@C-Ni nanocomposites with metallic nickel nanoparticles embedded in an RF-derived thin graphic carbon layer. Interestingly, the thin SiO2 spacer layer between RF-Ni2+ and Fe3O4 plays a critical role on adjusting the size and density of the nickel nanoparticles on the surface of Fe3O4@SiO2 nanospheres. The detailed tailoring mechanism is explicitly discussed, and it is shown that the iron oxide core can react with the nickel nanoparticles without the SiO2 spacer layer, and the size and density of the nickel nanoparticles can be effectively controlled when the SiO2 layer exits. The multifunctional composites exhibit a significantly enhanced catalytic performance in the reduction of 4-nitrophenol (4-NP).

  12. AFM surface morphology investigation of ion beam modified polyimide

    Science.gov (United States)

    Švorčík, V.; Arenholz, E.; Rybka, V.; Hnatowicz, V.

    1997-03-01

    Polyimide Upilex R was irradiated with 90 keV N + ions to the fluences of 1 × 10 14-2 × 10 17 cm -2. The surface morphology and the structure of the ion beam modified PI were examined using atomic force microscopy and X-ray difraction. Sheet resistance as a function of the ion fluence and the sample temperature was measured by standard two point technique. Significant changes of the surface morphology and production of graphitic phase in the sample surface layer modified by the ion irradiation were observed. Strong decrease of the sheet resistance (by 11 orders of magnitude) in the ion beam modified samples is connected with progressive carbonization and graphitization of the degraded polymer. Electrical charge transport is mediated by variable-range hopping mechanism. Drastic structural changes initiated by the ion irradiation to high fluences are similar to those observed in polymer pyrolysis.

  13. Study of pattern transition in nanopatterned Si(100) produced by impurity-assisted low-energy ion-beam erosion

    Science.gov (United States)

    Koyiloth Vayalil, Sarathlal; Gupta, Ajay; Roth, Stephan V.

    2017-04-01

    In this work, formation of self-organized Si nanostructures induced by pure Fe incorporation during normal incidence low-energy (1keV) Ar^+ ion bombardment is presented. It has been observed that the incorporation of Fe affects the evolution of the surface topography. The addition of Fe generates pronounced nanopatterns, such as dots, ripples and combinations of dots and ripples. The orientation of the ripple wave vector of the patterns formed is found to be in a direction normal to the Fe flow. The nanoripples with wavelength of the order of 39 nm produced is expected to be the lowest wavelength of the patterns reported on ion-beam-eroded structures under the incorporation of metallic impurities as per our knowledge. From the AFM and GISAXS analysis, it has been confirmed that the ripples formed are asymmetric in nature. The effect of the concentration of the Fe on morphological transition of the patterns has been studied using Rutherford backscattering measurements.

  14. Ultralow energy ion beam surface modification of low density polyethylene.

    Science.gov (United States)

    Shenton, Martyn J; Bradley, James W; van den Berg, Jaap A; Armour, David G; Stevens, Gary C

    2005-12-01

    Ultralow energy Ar+ and O+ ion beam irradiation of low density polyethylene has been carried out under controlled dose and monoenergetic conditions. XPS of Ar+-treated surfaces exposed to ambient atmosphere show that the bombardment of 50 eV Ar+ ions at a total dose of 10(16) cm(-2) gives rise to very reactive surfaces with oxygen incorporation at about 50% of the species present in the upper surface layer. Using pure O+ beam irradiation, comparatively low O incorporation is achieved without exposure to atmosphere (approximately 13% O in the upper surface). However, if the surface is activated by Ar+ pretreatment, then large oxygen contents can be achieved under subsequent O+ irradiation (up to 48% O). The results show that for very low energy (20 eV) oxygen ions there is a dose threshold of about 5 x 10(15) cm(-2) before surface oxygen incorporation is observed. It appears that, for both Ar+ and O+ ions in this regime, the degree of surface modification is only very weakly dependent on the ion energy. The results suggest that in the nonequilibrium plasma treatment of polymers, where the ion flux is typically 10(18) m(-2) s(-1), low energy ions (<50 eV) may be responsible for surface chemical modification.

  15. Passivation of surface-nanostructured f-SiC and porous SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang; Ou, Yiyu

    The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

  16. Ion and electron beam interaction on surfaces - a detection mechanism for obtaining visual ion beam images

    International Nuclear Information System (INIS)

    Fine, J.; Gorden, R. Jr.

    1978-01-01

    Two-dimensional images have been obtained of ion beam impact cross sections on solid surfaces by the coincident interaction of a rastered electron beam. This detection method is effective in producing images in real time on various insulator surfaces. The size of these images correlates well with ion beam current density profile measurements (at full width) and, therefore, can be very useful for ion beam diagnostics and alignment. (Auth.)

  17. Cleaning of diffusion bonding surface by argon ion bombardment treatment

    Science.gov (United States)

    Wang, Airu; Ohashi, Osamu; Yamaguchi, Norio; Aoki, Masanori; Higashi, Yasuo; Hitomi, Nobuteru

    2003-05-01

    The specimens of oxygen-free high conductivity copper, SUS304L stainless steel and pure iron were treated by argon ion bombardment and then were bonded by diffusion bonding method. The effects of argon ion bombardment treatment on faying surface morphology, tensile strength of bonding joints and inclusions at the fracture surface were investigated. The results showed that argon ion bombardment treatment was effective to remove the oxide film and contamination at the faying surface and improve the quality of joints. The tensile strength of the bonded joints was improved, and minimum bonding temperature to make the metallic bonding at the interface was lowered by argon ion bombardment treatment. At the joints with argon ion bombardment treatment, ductile fractured surface was seen and the amount of inclusions was obviously decreased.

  18. Depth dependences of the ion bombardment induced roughness and of the interdiffusion coefficient for Si/Al multilayers

    International Nuclear Information System (INIS)

    Wang, J.Y.; Zalar, A.; Mittemeijer, E.J.

    2004-01-01

    Depth dependences of the ion bombardment induced roughness and of the interdiffusion coefficient observed by Auger electron spectroscopical (AES) depth profiling of stationary as-deposited and annealed Si/Al multilayered specimens were evaluated by fitting calculated concentration-depth profiles to measured ones. The model used for calculation of the concentration-depth profile accounts for the instrumental smearing (interface broadening) upon AES depth profiling and, if relevant, interdiffusion. The instrumental smearing incorporates the effects of atomic mixing, roughness, escape depth of the Auger electrons, and preferential sputtering. The depth profile recorded from a stationary as-deposited Si/Al multilayered specimen was fitted by assuming, additionally, that the ion bombardment induced roughness increases with the sputter depth, keeping the other fitting parameters (including the inherent surface roughness) equal to the values determined for a rotating specimen. The roughness values determined by fitting to the measured depth profiles agree well with those determined directly by atomic force microscopy (AFM). Interdiffusion at the Si/Al interfaces was induced by annealing the specimens isothermally in an argon atmosphere at 120 deg. C for 240 min, 135 deg. C for 60 min, and 150 deg. C for 20 min. It was found that interdiffusion across interfaces near the surface of the multilayer is more pronounced than across interfaces in the deeper part of the layer. To account for this depth dependence of the extent of interdiffusion, calculated depth profiles for the annealed specimens were fitted to measured ones by assuming that diffusion annealing can be described as an additional 'roughening' of the interfaces. As a result, values of the interdiffusion coefficient as a function of the depth beneath the surface were obtained. The depth dependence of the interdiffusion coefficient was discussed in terms of the microstructural development

  19. MeV ion-induced strain at nanoisland-semiconductor surface and interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Ghatak, J. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Satpati, B. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Umananda, M. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Satyam, P.V. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India)]. E-mail: satyam@iopb.res.in; Akimoto, K. [Department of Quantum Engineering, Nagoya University, Nagoya 464-8603 (Japan); Ito, K. [Department of Quantum Engineering, Nagoya University, Nagoya 464-8603 (Japan); Emoto, T. [Toyota National College of Technology, 2-1, Toyota, Aichi 471-8525 (Japan)

    2006-03-15

    Strain at surfaces and interfaces play an important role in the optical and electronic properties of materials. MeV ion-induced strain determination in single crystal silicon substrates and in Ag (nanoisland)/Si(1 1 1) at surface/interfaces has been carried out using transmission electron microscopy (TEM) and surface-sensitive X-ray diffraction. Irradiation has been carried out with 1.5 MeV Au{sup 2+} ions at various fluences and impact angles. Selected area electron diffraction (SAED) and lattice imaging (using TEM) has been used to determine the strain at surface and interfaces. Preliminary results on the use of surface-sensitive asymmetric X-ray Bragg reflection method have been discussed. The TEM results directly indicate a contraction in the silicon lattice due to ion-induced effects. The nanoislands have shadowed the ion beam resulting in lesser strain beneath the island structures in silicon substrates. High-resolution lattice imaging has also been used to determine the strain in and around amorphization zones caused by the ion irradiation.

  20. P and Si functionalized MXenes for metal-ion battery applications

    KAUST Repository

    Zhu, Jiajie

    2017-04-10

    MXenes are a family of two-dimensional materials, composed of early transition metal carbides, nitrides, and carbonitrides, with great potential in energy storage systems, in particular in electrodes for Li, Na, K-ion batteries. However, so far the capacities are not competitive. In this context, we investigate P and Si functionalized MXenes for metal-ion battery applications, using first-principles calculations, since P and Si provide reaction products with high ion content. Replacement of the F and OH ligands of Ti2C and V2C with P and Si is demonstrated to be feasible (energy barriers of less than 0.128 eV) and the ion diffusion barriers turn out to be less than 0.32 eV. Importantly, the Li, Na, and K capacities are predicted to be 1767 mAh g−1, 711 mAh g−1, and 711 mAh g−1, respectively, thus being much higher than in the case of F and OH functionalization.

  1. The interaction of low energy ion beams with surfaces

    International Nuclear Information System (INIS)

    Carter, G.; Armour, D.G.

    1981-01-01

    Four of the most important physical processes which occur during ion plating and allied techniques (1) ion-induced (and energetic-atom-induced) desorption of adsorbed impurities from the substrate surface, (2) ion penetration and entrapment in the substrate and coating, (3) ion-induced sputtering of substrate and coating atoms and (4) recoil displacement of substrate and coating atoms leading to their intermixing. The ion and energetic atom energy range of importance is from thermal energies to the order of 1keV. Current understanding of these processes, supported by discussion of available experimental data, is reviewed. (Auth.)

  2. Auger emission from solid surfaces bombarded with ions

    International Nuclear Information System (INIS)

    Grizzi, Oscar.

    1986-01-01

    The Auger electron emission from Be, Na, Mg, Al and Si bombarded with 0,5-20 KeV noble gas ions is studied. Sharp structures of the Auger electron spectra of Na and Be were identified. A Monte Carlo program was adapted to simulate the colision cascade in the solid, inner shell excitations and Auger decays. From the comparision of experimental and simulated Auger intensities, the relative role of symmetric and asymmetric collisions in Be K- and Al L-shell excitation were evaluated. In the case of Be, the discussion of the exciting processes to higher projectile energies was extended. To this end, the simulation to early measurements of Be K X-ray yields was applied. From this analysis, information about the variations of the fluorescence yield and outer-shell occupation numbers of Be with projectile energy was obtained. The study of the shape of the sharp Auger structures and their dependence with the energy and incidence projectile angle gives information about the collisional processes, inner hole lifetimes and Auger decays. From the evaluation of the energy and angular distribution of the excited sputtered atoms and the interaction between them and the metallic-surface, the energy shift distributions in the Auger energies were obtained. From the comparison of these distributions with the experimental atomic peaks, the main causes of the broadening of these peaks were determined. (M.E.L.) [es

  3. Si surface passivation by SiOx:H films deposited by a low-frequency ICP for solar cell applications

    International Nuclear Information System (INIS)

    Zhou, H P; Wei, D Y; Xu, S; Xiao, S Q; Xu, L X; Huang, S Y; Guo, Y N; Khan, S; Xu, M

    2012-01-01

    Hydrogenated silicon suboxide (SiO x :H) thin films are fabricated by a low-frequency inductively coupled plasma of hydrogen-diluted SiH 4 + CO 2 at a low temperature (100 °C). Introduction of a small amount of oxygen into the film results in a predominantly amorphous structure, wider optical bandgap, increased H content, lower conductivity and higher activation energy. The minority carrier lifetime in the SiO x :H-passivated p-type Si substrate is up to 428 µs with a reduced incubation layer at the interface. The associated surface recombination velocity is as low as 70 cm s -1 . The passivation behaviour dominantly originates from the H-related chemical passivation. The passivation effect is also demonstrated by the excellent photovoltaic performance of the heterojunction solar cell with the SiO x :H-based passivation and emitter layers.

  4. Nanocrystalline MgMnSiO4 and MgCoSiO4 particles for rechargeable Mg-ion batteries

    Science.gov (United States)

    Truong, Quang Duc; Devaraju, Murukanahally Kempaiah; Honma, Itaru

    2017-09-01

    Magnesium-ion batteries hold promise as next-generation secondary battery systems owing to its low cost, safety and high volumetric capacity. Magnesium metal silicates exhibit potential electrode materials with high specific capacities. However, the strong electrostatic interaction between Mg2+ and host lattice due to its divalency as well as antisite cation exchange, induces slow intercalation kinetics of Mg ions within the crystal lattices. Thus, nanocrystalline particles with shortened Mg ion diffusion distance enable the insertion/extraction of Mg ions and improve specific capacities of the batteries. Herein, we report the low-temperature production of crystalline MgMnSiO4 and MgCoSiO4 nanoparticles by a rapid supercritical fluid processing. The extraction of magnesium ions from the olivine framework has been confirmed by X-ray photoelectron spectroscopy, revealing its ability as active materials for magnesium-ion battery.

  5. One dimensional Si/Sn - based nanowires and nanotubes for lithium-ion energy storage materials

    KAUST Repository

    Choi, Nam-Soon

    2011-01-01

    There has been tremendous interest in using nanomaterials for advanced Li-ion battery electrodes, particularly to increase the energy density by using high specific capacity materials. Recently, it was demonstrated that one dimensional (1D) Si/Sn nanowires (NWs) and nanotubes (NTs) have great potential to achieve high energy density as well as long cycle life for the next generation of advanced energy storage applications. In this feature article, we review recent progress on Si-based NWs and NTs as high capacity anode materials. Fundamental understanding and future challenges on one dimensional nanostructured anode are also discussed. © 2010 The Royal Society of Chemistry.

  6. Adsorption of oxygen atom on MoSi{sub 2} (110) surface

    Energy Technology Data Exchange (ETDEWEB)

    Sun, S.P., E-mail: sunshunping@jsut.edu.cn [School of Materials Engineering, Jiangsu University of Technology, Changzhou 213001 (China); Li, X.P.; Wang, H.J. [School of Materials Engineering, Jiangsu University of Technology, Changzhou 213001 (China); Jiang, Y., E-mail: yjiang@csu.edu.cn [School of Materials Science and Engineering, and Key Laboratory for Non-ferrous Materials of Ministry of Education, Central South University, Changsha 410083 (China); Yi, D.Q. [School of Materials Science and Engineering, and Key Laboratory for Non-ferrous Materials of Ministry of Education, Central South University, Changsha 410083 (China)

    2016-09-30

    Highlights: • The adsorption of oxygen atom on MoSi{sub 2} (110) surface was studied systematically. • The stability of MoSi{sub 2} low-index surfaces was also investigated. • The preference adsorption site of MoSi{sub 2} (110) surface for oxygen atom was H site. - Abstract: The adsorption energy, structural relaxation and electronic properties of oxygen atom on MoSi{sub 2} (110) surface have been investigated by first-principles calculations. The energetic stability of MoSi{sub 2} low-index surfaces was analyzed, and the results suggested that MoSi{sub 2} (110) surface had energetically stability. The site of oxygen atom adsorbed on MoSi{sub 2} (110) surface were discussed, and the results indicated that the preference adsorption site of MoSi{sub 2} (110) surface for oxygen atom was H site (hollow position). Our calculated work should help to understand further the interaction between oxygen atoms and MoSi{sub 2} surfaces.

  7. Plasma immersion ion implantation: A viable candidate for low cost purification of mc-Si by nanocavities?

    Energy Technology Data Exchange (ETDEWEB)

    Kouadri-boudjelthia, E.-A., E-mail: e.kouadri@cder.dz [Centre de Développement des Energies Renouvelables, CDER, 16340 Algiers (Algeria); Ntsoenzok, E. [Conditions Extrêmes et Matériaux: Haute Température et Irradiation (CEMHTI), CNRS UPR 3079, 3A Rue de la Férollerie, 45071 Orléans Cedex 2 (France); Benoit, R. [Centre de Recherche sur la Matière Divisée (CRMD), 1B rue de la Férollerie, 45071 Orléans Cedex 2 (France); Regula, G. [Aix-Marseille Université, CNRS, IM2NP, UMR 7334, 13397 Marseille (France); Etienne, H.; Michel, T. [Ion Beam Services (IBS), Rue G. Imbert Prolongée, F-13790 Peynier (France); Ashok, S. [Pennsylvania State University, 212 Earth and Engineering Science Building, University Park, PA 16802 (United States)

    2016-01-01

    Highlights: • The ability of the H implantation by PIII, to form cavities in mc-Si. • The difference between PIII and Classical implantation (multi and mono-energy). • The good trapping ability in real conditions (low impurities concentration). - Abstract: A low-cost purification technique was evaluated on multicrystalline silicon (mc-Si). It consists of an efficient impurity trapping process involving nanocavities created by plasma immersion ion implantation (PIII). The study consisted of assessing (i) the creation of nanocavities by PIII and (ii) their ability to trap impurities in real conditions (without intentional contamination). Square pieces of p-type mc-Si samples, having a surface of 4 cm{sup 2} were used. They were implanted with hydrogen by PIII at 20 kV with a fluence of 5 × 10{sup 16} cm{sup −2} and then annealed for 30 min, in the temperature range 673–1273 K. The evolution of shape, size and spatial distribution of nanocavities was studied by transmission electron microscopy and time of flight secondary ion mass spectrometry in order to check both the formation of cavities and to test their ability to getter impurities by either precipitation or chemisorption. Results reveal surprisingly that, despite the triangular as-implanted H profile, nanocavities can be created by H-PIII, evidently because of the multi-energetic and high flux implantation (about 8 × 10{sup 13} cm{sup −2} s{sup −1}, 40–80 times greater than in conventional implantation) and that they are able to trap various impurities, initially present in mc-Si, such as Fe, Cu and Ni (according to their Gibbs energy), competing with the many existing gettering sites available in mc-Si, such as Si-related precipitates (oxygen, carbon, nitrogen or metal silicides), dislocations and grain boundaries. The area containing the biggest cavities have the highest density of gettering sites, especially for Cu, which can be trapped either by chemisorption (since it has higher binding

  8. Preparation of Si sub 1 sub - sub x sub - sub y Ge sub x C sub y semiconductor films on Si by ion implantation and solid phase epitaxy

    CERN Document Server

    Liu Xue Qin; Zhen Cong Mian; Zhang Jing; Yang Yi; Guo Yong

    2002-01-01

    Si sub 1 sub - sub x sub - sub y Ge sub x C sub y ternary alloy semiconductor films were prepared on Si(100) substrates by C ion implanting SiGe films and subsequent solid phase epitaxy (SPE). Two-step annealing technique was employed in the SPE processing. The properties of the alloy films were determined using Rutherford backscattering spectroscopy (RBS), Fourier transform infrared spectroscopy (FTIR) and High-resolution x-ray diffraction (HRXRD) measurements. It is shown that C atoms are located at substitutional sites and the incorporation of C relieves the compressive strain in the SiGe layer

  9. Single ion induced surface nanostructures: a comparison between slow highly charged and swift heavy ions.

    Science.gov (United States)

    Aumayr, Friedrich; Facsko, Stefan; El-Said, Ayman S; Trautmann, Christina; Schleberger, Marika

    2011-10-05

    This topical review focuses on recent advances in the understanding of the formation of surface nanostructures, an intriguing phenomenon in ion-surface interaction due to the impact of individual ions. In many solid targets, swift heavy ions produce narrow cylindrical tracks accompanied by the formation of a surface nanostructure. More recently, a similar nanometric surface effect has been revealed for the impact of individual, very slow but highly charged ions. While swift ions transfer their large kinetic energy to the target via ionization and electronic excitation processes (electronic stopping), slow highly charged ions produce surface structures due to potential energy deposited at the top surface layers. Despite the differences in primary excitation, the similarity between the nanostructures is striking and strongly points to a common mechanism related to the energy transfer from the electronic to the lattice system of the target. A comparison of surface structures induced by swift heavy ions and slow highly charged ions provides a valuable insight to better understand the formation mechanisms. © 2011 IOP Publishing Ltd

  10. Angular distributions of ions channeled in the <1 0 0> Si crystals

    CERN Document Server

    Petrovic, S; Kokkoris, M; Neskovic, N

    2002-01-01

    In this study we analyze the angular distributions of Ne sup 1 sup 0 sup + ions channeled in the Si crystals. The ion energy is 60 MeV and the crystal thickness is varied from 286 to 3435 nm. This thickness range corresponds to the reduced crystal thickness range from 0.5 to 6, i.e. from the second to the twelfth rainbow cycle. The angular distributions were obtained via the numerical solution of the ion equations of motion and the computer simulation method. The analysis shows that the angular distribution has a periodic behavior. We also analyze the transmission patterns corresponding to the angular distributions. These patterns should be compared to the experimental patterns obtainable by a two-dimensional position sensitive detector. We demonstrate that, when the ion beam divergence is sufficiently large, i.e. much larger than the critical angle for channeling, the channeling star effect occurs in the transmission patterns.

  11. The surface modification of nanoporous SiO x thin films with a monofunctional organosilane

    International Nuclear Information System (INIS)

    Yang, D.-Q.; Meunier, M.; Sacher, E.

    2005-01-01

    The surfaces of nanostructured, porous SiO x /Si (air-oxidized Si) and SiO x thin films, deposited by excimer laser ablation in He and He + O 2 gas ambients, respectively, have been modified by the deposition of a monofunctional organosilane. They were characterized using photoacoustic Fourier-transform infrared (FTIR) X-ray photoelectron (XPS) spectroscopies, and field-emission scanning electron microscopy (FESEM). Photoacoustic FTIR analysis indicates that the organosilane has hydrolyzed to form a silanol, which has chemically reacted with SiO x through its surface silanol (-SiOH) group, to form siloxane (Si-O-Si) structures. An enhanced IR spectral signal is found, due to the expansion and contraction of both the pores of the solid and the gas within them

  12. Field-ion microscope with plasma preparation of specimen surface

    International Nuclear Information System (INIS)

    Suvorov, A.L.; Bobkov, A.F.; Kasatkin, V.A.; Zaitsev, S.V.

    1986-01-01

    This paper presents a method for preparing specimen surfaces for field-ion microscope analysis, in which a brief gas discharge is initiated near the surface under study with simultaneous pulse evaporation by the field of the material of the specimen itself or desorption of foreign atoms and molecular complexes from its surface. The method considerably increases the efficiency of structure analysis of conducting materials in a field-ion microscope. An all-metal field-ion microscope is developed for implementation of the method

  13. Evaluation of double-layer density modulated Si thin films as Li-ion battery anodes

    Science.gov (United States)

    Taha Demirkan, Muhammed; Yurukcu, Mesut; Dursun, Burcu; Demir-Cakan, Rezan; Karabacak, Tansel

    2017-10-01

    Double-layer density modulated silicon thin films which contain alternating low and high density Si film layers were fabricated by magnetron sputtering. Two different samples consisting of alternating layers of high-density/low-density and low-density/high-density Si thin film layers were investigated as anode electrodes in Li-ion batteries. Si thin film in which the terminating layer at the top is low density Si layer-quoted as low-density/high-density film (LD/HD)- exhibits better performance than Si thin film that has high density layer at the top, -quoted as high-density/low-density (HD/LD). A highly stabilized cycling performance with the specific charge capacities of 2000 mAh g‑1 at the 150th cycle at C/2 current density, and 1200 mAh g‑1 at the 240th cycle at 10 C current density were observed for the LD/HD Si anode in the presence of fluoroethylene carbonate (FEC) electrolyte additive.

  14. SiS nanosheets as a promising anode material for Li-ion batteries: a computational study.

    Science.gov (United States)

    Kong, Qingquan; Feng, Wei; Wang, Qingyuan; Gan, Li-Yong; Sun, Chenghua

    2017-03-22

    Recently, a two-dimensional Pma2-SiS monolayer has been predicted to show promising electronic properties [Nano Lett., 2015, 16, 1110]. However, it is suggested that Pma2-SiS is not suitable as an anode for Li-ion batteries [J. Power Sources, 2016, 331, 391]. By employing density functional theory calculations, we find that an ultrahigh theoretical specific capacity of 893.4 mA h g -1 can be achieved in Pma2-SiS due to the strong bonding between Li and the S atoms released from Si-S bond breakage. Additionally, the low barrier of Li-diffusion (0.08 eV) along the Si-Si bond direction and the moderate average voltage (1.12 V) of the Li intercalation suggest that Pma2-SiS is promising as an anode material for Li-ion battery applications.

  15. Carbon ion irradiation induced surface modification of polypropylene

    International Nuclear Information System (INIS)

    Saha, A.; Chakraborty, V.; Dutta, R.K.; Chintalapudi, S.N.

    2001-01-01

    Polypropylene was irradiated with 12 C ions of 3.6 and 5.4 MeV energies in the fluence range of 5x10 13 -5x10 14 ions/cm 2 using 3 MV tandem accelerator. Ion penetration was limited to a few microns and surface modifications were investigated by scanning electron microscopy. At the lowest ion fluence only blister formation of various sizes (1-6 μm) were observed, but at higher fluence (1x10 14 ions/cm 2 ) a three-dimensional network structure was found to form. A gradual degradation in the network structure was observed with further increase in the ion fluence. The dose dependence of the changes on surface morphology of polypropylene is discussed

  16. Carbon ion irradiation induced surface modification of polypropylene

    Energy Technology Data Exchange (ETDEWEB)

    Saha, A. E-mail: abhijit@alpha.iuc.res.in; Chakraborty, V.; Dutta, R.K.; Chintalapudi, S.N

    2001-12-01

    Polypropylene was irradiated with {sup 12}C ions of 3.6 and 5.4 MeV energies in the fluence range of 5x10{sup 13}-5x10{sup 14} ions/cm{sup 2} using 3 MV tandem accelerator. Ion penetration was limited to a few microns and surface modifications were investigated by scanning electron microscopy. At the lowest ion fluence only blister formation of various sizes (1-6 {mu}m) were observed, but at higher fluence (1x10{sup 14} ions/cm{sup 2}) a three-dimensional network structure was found to form. A gradual degradation in the network structure was observed with further increase in the ion fluence. The dose dependence of the changes on surface morphology of polypropylene is discussed.

  17. Negative ion formation from SF6 on hot surfaces

    International Nuclear Information System (INIS)

    Delmore, J.E.

    1981-01-01

    Positive surface ionization is a widely used technique for the isotopic analysis of a number of elements. The corresponding negative ion technique has found much less use. One of the main reasons is that hot filaments emit electrons, which are accelerated by the potentials on the negative ion lens, and repulsed by the potentials on the positive ion lens. Negative surface ionization (NSI) must then be limited to conditions under which the resulting electron current does not become large enough to disrupt the operation of the lens due to arcing, charge density defocusing or heating of the focus plates. Hot filaments operated in the negative ion mode have the potential of ionizing not only by NSI, but also by electron attachment. Many molecules attach thermal electrons ( 6 (ea 6 has a high thermal electron attachment rate. Thus SF 6 will form negative ions from an electron attachment process, while the others will form negative ions from an NSI process

  18. Surface texture modification of spin-coated SiO2 xerogel thin films ...

    Indian Academy of Sciences (India)

    Condensation reaction: Si–OR + HO–Si → Si–O–Si + ROH. (b). Si–OH + HO–Si → Si–O–Si + H2O. (c). (Brinker and Scherrer 1990). The synthesized porous silica films usually are hydrophilic nature which can absorb moisture under the atmospheric con- dition due to the presence of the polar OH radical on the surface that ...

  19. Anomalous surface behavior of hydrated guanidinium ions due to ion pairing

    Science.gov (United States)

    Ekholm, Victor; Vazdar, Mario; Mason, Philip E.; Bialik, Erik; Walz, Marie-Madeleine; Öhrwall, Gunnar; Werner, Josephina; Rubensson, Jan-Erik; Jungwirth, Pavel; Björneholm, Olle

    2018-04-01

    Surface affinity of aqueous guanidinium chloride (GdmCl) is compared to that of aqueous tetrapropylammonium chloride (TPACl) upon addition of sodium chloride (NaCl) or disodium sulfate (Na2SO4). The experimental results have been acquired using the surface sensitive technique X-ray photoelectron spectroscopy on a liquid jet. Molecular dynamics simulations have been used to produce radial distribution functions and surface density plots. The surface affinities of both TPA+ and Gdm+ increase upon adding NaCl to the solution. With the addition of Na2SO4, the surface affinity of TPA+ increases, while that of Gdm+ decreases. From the results of MD simulations it is seen that Gdm+ and SO4 2 - ions form pairs. This finding can be used to explain the decreased surface affinity of Gdm+ when co-dissolved with SO4 2 - ions. Since SO4 2 - ions avoid the surface due to the double charge and strong water interaction, the Gdm+-SO4 2 - ion pair resides deeper in the solutions' bulk than the Gdm+ ions. Since TPA+ does not form ion pairs with SO4 2 -, the TPA+ ions are instead enriched at the surface.

  20. Green synthesis and stable li-storage performance of FeSi(2)/Si@C nanocomposite for lithium-ion batteries.

    Science.gov (United States)

    Chen, Yao; Qian, Jiangfeng; Cao, Yuliang; Yang, Hanxi; Ai, Xinping

    2012-07-25

    Si-based alloy materials have received great attention as an alternative anode for high capacity and safe Li-ion batteries, but practical implementation of these materials is hindered by their poor electrochemical utilization and cyclability. To tackle this problem, we developed a core-shelled FeSi2/Si@C nanocomposite by a direct ball-milling of Fe and Si powders. Such a nanostructured composite can effectively buffer the volumetric change by alloying active Si phase with inactive FeSi2 matrix in its inner cores and prevent the aggregation of the active Si particles by outer graphite shells, so as to improve the cycling stability of the composite material. As a result, the FeSi2/Si@C composite exhibits a high Li-storage capacity of ∼1010 mA g(-1) and an excellent cyclability with 94% capacity retention after 200 cycles, showing a great promise for battery applications. More significantly, the synthetic method developed in this work possesses several advantages of low cost, zero emission, and operational simplicity, possibly to be extended for making other Li-storage alloys for large-scale applications in Li-ion batteries.

  1. 1.2 MeV/amu Xe ion induced damage recovery in SiC

    International Nuclear Information System (INIS)

    O’Connell, J.H.; Skuratov, V.A.; Sohatsky, A.S.; Neethling, J.H.

    2014-01-01

    The microstructural changes of 4H-SiC samples dual irradiated with either low energy He (10 keV) or Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 10 13 cm −2 restore crystallinity in a heavily damaged partially amorphous zone. No significant damage recovery was observed in fully amorphized layers of silicon carbide apart from a 5% reduction in the amorphous layer thickness

  2. The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si

    Energy Technology Data Exchange (ETDEWEB)

    Wallace, J. B.; Aji, L. B. Bayu; Martin, A. A.; Shin, S. J.; Shao, L.; Kucheyev, S. O.

    2017-01-06

    The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. The dominant dynamic annealing processes, however, remain unknown even for crystalline Si. Here, we use a pulsed ion beam method to study defect dynamics in Si bombarded in the temperature range from -20 to 140 °C with 500 keV Ar ions. Results reveal a defect relaxation time constant of ~10–0.2 ms, which decreases monotonically with increasing temperature. The dynamic annealing rate shows an Arrhenius dependence with two well-defined activation energies of 73 ± 5 meV and 420 ± 10 meV, below and above 60 °C, respectively. Rate theory modeling, bench-marked against this data, suggests a crucial role of both vacancy and interstitial diffusion, with the dynamic annealing rate limited by the migration and interaction of vacancies.

  3. Plasma immersion ion implantation for the efficient surface modification of medical materials

    Energy Technology Data Exchange (ETDEWEB)

    Slabodchikov, Vladimir A., E-mail: dipis1991@mail.ru; Borisov, Dmitry P., E-mail: borengin@mail.ru; Kuznetsov, Vladimir M., E-mail: kuznetsov@rec.tsu.ru [National Research Tomsk State University, Tomsk, 634050 (Russian Federation)

    2015-10-27

    The paper reports on a new method of plasma immersion ion implantation for the surface modification of medical materials using the example of nickel-titanium (NiTi) alloys much used for manufacturing medical implants. The chemical composition and surface properties of NiTi alloys doped with silicon by conventional ion implantation and by the proposed plasma immersion method are compared. It is shown that the new plasma immersion method is more efficient than conventional ion beam treatment and provides Si implantation into NiTi surface layers through a depth of a hundred nanometers at low bias voltages (400 V) and temperatures (≤150°C) of the substrate. The research results suggest that the chemical composition and surface properties of materials required for medicine, e.g., NiTi alloys, can be successfully attained through modification by the proposed method of plasma immersion ion implantation and by other methods based on the proposed vacuum equipment without using any conventional ion beam treatment.

  4. Enhanced formation of Ge nanocrystals in Ge : SiO2 layers by swift heavy ions

    International Nuclear Information System (INIS)

    Antonova, I V; Volodin, V A; Marin, D M; Skuratov, V A; Smagulova, S A; Janse van Vuuren, A; Neethling, J; Jedrzejewski, J; Balberg, I

    2012-01-01

    In this paper we report the ability of swift heavy Xe ions with an energy of 480 MeV and a fluence of 10 12 cm -2 to enhance the formation of Ge nanocrystals within SiO 2 layers with variable Ge contents. These Ge-SiO 2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge : SiO 2 films with subsequent annealing at 500 °C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5 nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550 °C and post-irradiation annealing at 600 °C, which also leads to the observation of room temperature visible photoluminescence. (paper)

  5. Improvements to the ion Doppler spectrometer diagnostic on the HIT-SI experiments

    Science.gov (United States)

    Hossack, Aaron; Chandra, Rian; Everson, Chris; Jarboe, Tom

    2018-03-01

    An ion Doppler spectrometer diagnostic system measuring impurity ion temperature and velocity on the HIT-SI and HIT-SI3 spheromak devices has been improved with higher spatiotemporal resolution and lower error than previously described devices. Hardware and software improvements to the established technique have resulted in a record of 6.9 μs temporal and ≤2.8 cm spatial resolution in the midplane of each device. These allow Ciii and Oii flow, displacement, and temperature profiles to be observed simultaneously. With 72 fused-silica fiber channels in two independent bundles, and an f/8.5 Czerny-Turner spectrometer coupled to a video camera, frame rates of up to ten times the imposed magnetic perturbation frequency of 14.5 kHz were achieved in HIT-SI, viewing the upper half of the midplane. In HIT-SI3, frame rates of up to eight times the perturbation frequency were achieved viewing both halves of the midplane. Biorthogonal decomposition is used as a novel filtering tool, reducing uncertainty in ion temperature from ≲13 to ≲5 eV (with an instrument temperature of 8-16 eV) and uncertainty in velocity from ≲2 to ≲1 km/s. Doppler shift and broadening are calculated via the Levenberg-Marquardt algorithm, after which the errors in velocity and temperature are uniquely specified. Axisymmetric temperature profiles on HIT-SI3 for Ciii peaked near the inboard current separatrix at ≈40 eV are observed. Axisymmetric plasma displacement profiles have been measured on HIT-SI3, peaking at ≈6 cm at the outboard separatrix. Both profiles agree with the upper half of the midplane observable by HIT-SI. With its complete midplane view, HIT-SI3 has unambiguously extracted axisymmetric, toroidal current dependent rotation of up to 3 km/s. Analysis of the temporal phase of the displacement uncovers a coherent structure, locked to the applied perturbation. Previously described diagnostic systems could not achieve such results.

  6. Radiation Resistance of the U(Al, Si)(3) Alloy: Ion-Induced Disordering

    Czech Academy of Sciences Publication Activity Database

    Meshi, L.; Yaniv, G.; Horák, Pavel; Vacík, Jiří; Mykytenko, N.; Rafailov, G.; Dahan, I.; Fuks, D.; Kiv, A.

    2018-01-01

    Roč. 11, č. 2 (2018), č. článku 228. ISSN 1996-1944 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389005 Keywords : U-Al-Si * ion-irradiation * transmission electron microscopy * structural defects * disordering Subject RIV: JI - Composite Materials OBOR OECD: Composites (including laminates, reinforced plastics, cermets, combined natural and synthetic fibre fabrics Impact factor: 2.654, year: 2016

  7. Influence of the step properties on submonolayer growth of Ge and Si at the Si(111) surface

    Energy Technology Data Exchange (ETDEWEB)

    Romanyuk, Konstantin

    2009-10-21

    The present work describes an experimental investigation of the influence of the step properties on the submonolayer growth at the Si(111) surface. In particular the influence of step properties on the morphology, shape and structural stability of 2D Si/Ge nanostructures was explored. Visualization, morphology and composition measurements of the 2D SiGe nanostructures were carried out by scanning tunneling microscopy (STM). The formation of Ge nanowire arrays on highly ordered kink-free Si stepped surfaces is demonstrated. The crystalline nanowires with minimal kink densities were grown using Bi surfactant mediated epitaxy. The nanowires extend over lengths larger than 1 {mu}m have a width of 4 nm. To achieve the desired growth conditions for the formation of such nanowire arrays, a modified variant of surfactant mediated epitaxy was explored. It was shown that controlling the surfactant coverage at the surface and/or at step edges modifies the growth properties of surface steps in a decisive way. The surfactant coverage at step edges can be associated with Bi passivation of the step edges. The analysis of island size distributions showed that the step edge passivation can be tuned independently by substrate temperature and by Bi rate deposition. The measurements of the island size distributions for Si and Ge in surfactant mediated growth reveal different scaling functions for different Bi deposition rates on Bi terminated Si(111) surface. The scaling function changes also with temperature. The main mechanism, which results in the difference of the scaling functions can be revealed with data of Kinetic Monte-Carlo simulations. According to the data of the Si island size distributions at different growth temperatures and different Bi deposition rates the change of SiGe island shape and preferred step directions were attributed to the change of the step edge passivation. It was shown that the change of the step edge passivation is followed by a change of the

  8. Effects of Mg and Si ions on the symmetry of δ-AlOOH

    Science.gov (United States)

    Komatsu, K.; Sano-Furukawa, A.; Kagi, H.

    2011-10-01

    We conducted powder neutron diffraction for δ-AlOOH samples with and without Mg and Si ions under ambient conditions in order to investigate the long-standing problem of the symmetry of this phase. The observed reflection conditions clearly show that the space group of pure δ-AlOOH is P21 nm with ordered hydrogen bonds, whereas that of δ-(Al0.86Mg0.07Si0.07)OOH is Pnnm or Pnn2 with disordered hydrogen bonds. It is more likely that the space group of δ-(Al0.86Mg0.07Si0.07)OOH is Pnnm, because cation or hydrogen ordering that breaks the mirror plane perpendicular to c axis in the Pnnm structure would not occur. The previously reported inconsistency for the space group of this phase was caused by the substitution of Mg and Si ions to Al site, i.e., the disordered cations with different valences may fluctuate hydrogen positions, and the disordered hydrogen causes the symmetry change.

  9. Ion induced optical emission for surface and depth profile analysis

    International Nuclear Information System (INIS)

    White, C.W.

    1977-01-01

    Low-energy ion bombardment of solid surfaces results in the emission of infrared, visible, and ultraviolet radiation produced by inelastic ion-solid collision processes. The emitted optical radiation provides important insight into low-energy particle-solid interactions and provides the basis for an analysis technique which can be used for surface and depth profile analysis with high sensitivity. The different kinds of collision induced optical radiation emitted as a result of low-energy particle-solid collisions are reviewed. Line radiation arising from excited states of sputtered atoms or molecules is shown to provide the basis for surface and depth profile analysis. The spectral characteristics of this type of radiation are discussed and applications of the ion induced optical emission technique are presented. These applications include measurements of ion implant profiles, detection sensitivities for submonolayer quantities of impurities on elemental surfaces, and the detection of elemental impurities on complex organic substrates

  10. Electrochemical performance of DVB-modified SiOC and SiCN polymer-derived negative electrodes for lithium-ion batteries

    International Nuclear Information System (INIS)

    Liu, Guanwei; Kaspar, Jan; Reinold, Lukas Mirko; Graczyk-Zajac, Magdalena; Riedel, Ralf

    2013-01-01

    Highlights: • Polymer-derived SiCN and SiOC ceramics are studied as anode for Li-ion batteries. • Ceramic precursors are modified in order to increase the carbon content. • Ceramic matrix stabilizes free carbon phase. • Stabilizing role is lost once the amount of carbon exceeds a threshold value. -- Abstract: Chemical modification of commercially available polyorganosilazane (HTT1800) and polyorganosiloxane (Polyramic RD-684a) with divinylbenzene (DVB) is accomplished via hydrosilylation reaction. The incorporation of DVB leads to an increase of the free carbon amount after pyrolysis within the corresponding SiCN and SiOC ceramics. The modification is carried out with lower, equal and higher stoichiometric ratios of the Si-H to C=C groups present in the Si-based polymer and DVB. FTIR results indicate a complete consumption of the Si-H bonds in the case of the stoichiometric amount of DVB and polymer RD-684a, while for HTT1800 neither the stoichiometric ratio nor DVB excess leads to a complete consumption of the Si-H groups. For both SiCN and SiOC ceramics the carbon content is found to increase with the amount of DVB. However, the most significant increase in free carbon content is registered for SiCN samples, namely of ca. 40%. The carbon content changed from 9.9 wt.% in the pure HTT1800-derived material up to 49.3 wt.% for the SiCN ceramic obtained with the highest amount of DVB addition. Accordingly, Li-ion storage and therefore charge storage capacity are simultaneously increased, for the first cycle from 136 to 574 mAh g −1 , while columbic efficiency is raised by 10% up to 60.4%

  11. Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

    International Nuclear Information System (INIS)

    Hlatshwayo, T T; Kuhudzai, R J; Njoroge, E G; Malherbe, J B; O’Connell, J H; Skuratov, V A; Msimanga, M

    2015-01-01

    The effect of swift heavy ion (Xe 167 MeV) irradiation on polycrystalline SiC individually implanted with 360 keV Kr and Xe ions at room temperature to fluences of 2  ×  10 16 cm −2 and 1  ×  10 16 cm −2 respectively, was investigated using transmission electron microscopy (TEM), Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Implanted specimens were each irradiated with 167 MeV Xe +26 ions to a fluence of 8.3  ×  10 14 cm −2 at room temperature. It was observed that implantation of 360 keV Kr and Xe ions individually at room temperature amorphized the SiC from the surface up to a depth of 186 and 219 nm respectively. Swift heavy ion (SHI) irradiation reduced the amorphous layer by about 27 nm and 30 nm for the Kr and Xe samples respectively. Interestingly, the reduction in the amorphous layer was accompanied by the appearance of randomly oriented nanocrystals in the former amorphous layers after SHI irradiation in both samples. Previously, no similar nanocrystals were observed after SHI irradiations at electron stopping powers of 33 keV nm −1 and 20 keV nm −1 to fluences below 10 14 cm −2 . Therefore, our results suggest a fluence threshold for the formation of nanocrystals in the initial amorphous SiC after SHI irradiation. Raman results also indicated some annealing of radiation damage after swift heavy ion irradiation and the subsequent formation of small SiC crystals in the amorphous layers. No diffusion of implanted Kr and Xe was observed after swift heavy ion irradiation. (paper)

  12. A pulse synthesis of beta-FeSi sub 2 layers on silicon implanted with Fe sup + ions

    CERN Document Server

    Batalov, R I; Terukov, E I; Kudoyarova, V K; Weiser, G; Kuehne, H

    2001-01-01

    The synthesis of thin beta-FeSi sub 2 films was performed by means of the Fe sup + ion implantation into Si (100) and the following nanosecond pulsed ion treatment of implanted layer. Using the beta-FeSi sub 2 beta-FeSi sub 2 e X-ray diffraction it is shown that the pulsed ion treatment results in the generation of the mixture of two phases: FeSi and beta-FeSi sub 2 with stressed crystal lattices. The following short-time annealing leads to the total transformation of the FeSi phase into the beta-FeSi sub 2 one. The Raman scattering data prove the generation of the beta-FeSi sub 2 at the high degree of the silicon crystallinity. The experimental results of the optical absorption testify to the formation of beta-FeSi sub 2 layers and precipitates with the straight-band structure. The photoluminescence signal at lambda approx = 1.56 mu m observes up to 210 K

  13. Effects of calcium ions on titanium surfaces for bone regeneration.

    Science.gov (United States)

    Anitua, Eduardo; Piñas, Laura; Murias, Alia; Prado, Roberto; Tejero, Ricardo

    2015-06-01

    The chemistry and topography of implant surfaces are of paramount importance for the successful tissue integration of load-bearing dental and orthopedic implants. Here we evaluate in vitro and in vivo titanium implant surfaces modified with calcium ions (Ca(2+) surfaces). Calcium ions produce a durable chemical and nano-topographical modification of the titanium oxide interface. Time of flight secondary ion mass spectrometry examination of the outermost surface composition, shows that calcium ions in Ca(2+) surfaces effectively prevent adventitious hydrocarbon passivation of the oxide layer. In aqueous solutions Ca(2+) surfaces release within the first minute, 2/3 of the total measured Ca(2+), the rest is released over the following 85 days. Additionally, Ca(2+) surfaces significantly increase human fetal osteoblasts-like cell adhesion, proliferation and differentiation, as measured by the autocrine synthesis of osteopontin. Relevant for clinical application, after 12 weeks of healing in sheep tibia, microcomputer tomography and histomorphometric analysis show that Ca(2+) surfaces develop significantly more bone contacts and higher bone density in the 1mm region around the implant. Consequently, titanium implants modified with calcium ions represent a valuable tool to improve endosseous integration in the clinical practice. Copyright © 2015 Elsevier B.V. All rights reserved.

  14. Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Sołtys, Jakub; Piechota, Jacek; Ptasinska, Maria [Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawińskiego 5a, 02-106 Warsaw (Poland); Krukowski, Stanisław, E-mail: stach@unipress.waw.pl [Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawińskiego 5a, 02-106 Warsaw (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw (Poland)

    2014-08-28

    Ab initio density functional theory simulations were used to investigate the influence of hydrogen intercalation on the electronic properties of single and multiple graphene layers deposited on the SiC(0001) surface (Si-face). It is shown that single carbon layer, known as a buffer layer, covalently bound to the SiC substrate, is liberated after hydrogen intercalation, showing characteristic Dirac cones in the band structure. This is in agreement with the results of angle resolved photoelectron spectroscopy measurements of hydrogen intercalation of SiC-graphene samples. In contrast to that hydrogen intercalation has limited impact on the multiple sheet graphene, deposited on Si-terminated SiC surface. The covalently bound buffer layer is liberated attaining its graphene like structure and dispersion relation typical for multilayer graphene. Nevertheless, before and after intercalation, the four layer graphene preserved the following dispersion relations in the vicinity of K point: linear for (AAAA) stacking, direct parabolic for Bernal (ABAB) stacking and “wizard hat” parabolic for rhombohedral (ABCA) stacking.

  15. High fluence swift heavy ion structure modification of the SiO{sub 2}/Si interface and gate insulator in 65 nm MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Yao [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gao, Bo, E-mail: gaobo@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gong, Min [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Willis, Maureen [College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Yang, Zhimei [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); Guan, Mingyue [College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Li, Yun [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China)

    2017-04-01

    In this work, a study of the structure modification, induced by high fluence swift heavy ion radiation, of the SiO{sub 2}/Si structures and gate oxide interface in commercial 65 nm MOSFETs is performed. A key and novel point in this study is the specific use of the transmission electron microscopy (TEM) technique instead of the conventional atomic force microscope (AFM) or scanning electron microscope (SEM) techniques which are typically performed following the chemical etching of the sample to observe the changes in the structure. Using this method we show that after radiation, the appearance of a clearly visible thin layer between the SiO{sub 2} and Si is observed presenting as a variation in the TEM intensity at the interface of the two materials. Through measuring the EDX line scans we reveal that the Si:O ratio changed and that this change can be attributed to the migration of the Si towards interface after the Si-O bond is destroyed by the swift heavy ions. For the 65 nm MOSFET sample, the silicon substrate, the SiON insulator and the poly-silicon gate interfaces become blurred under the same irradiation conditions.

  16. Double Core-Shell Si@C@SiO2for Anode Material of Lithium-Ion Batteries with Excellent Cycling Stability.

    Science.gov (United States)

    Yang, Tao; Tian, Xiaodong; Li, Xiao; Wang, Kai; Liu, Zhanjun; Guo, Quangui; Song, Yan

    2017-02-10

    Lithium-ion batteries (LIBs) composed of silicon (Si) anodes suffer from severe capacity decay because of the volume expansion deriving from the formation of Li 15 Si 4 alloy. In this study, we prepared a double core-shell Si@C@SiO 2 nanostructure by the modified Stöber method. In the process of Si lithiation, the carbon layer alleviates the large pressure slightly then the silica shell restricts the lithiation degree of Si. The combination of carbon interlayer and silica shell guarantees structural integrity and avoids further decay of capacity because of the formation of stable solid-electrolyte interphase (SEI) films. The resultant Si@C@SiO 2 presents remarkable cycling stability with capacity decay of averagely 0.03 % per cycle over 305 cycles at 200 mA g -1 , an improvement on Si@C (0.22 %) by more than a factor of 7. This encouraging result demonstrates that the designation involved in this work is effective for mitigating the capacity decay of Si-based anodes for LIBs. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. The Effect of Irradiation of Fe and Ar Ion on the Surface Morphology of Diamond Thin Film Related to the Magnetoresistance Property

    Directory of Open Access Journals (Sweden)

    Salim Mustofa

    2016-08-01

    Full Text Available The irradiation of Fe and Ar ion was applied on the surface of diamond/Si thin film to know its effect on the morphology of thin film.The magnetoresistance property was also studied. Ion irradiation treatment using Fe ion followed by argon ion at the energy of 70 keV and a dose of 1 x 1015 ion/cm2 have been conducted on the surface of two types of thin film, diamond/Si (111 and diamond/Si(100. Both thin films were made by using a CVD method, and the thickness of the thin film is 1000-nm. From simulations using the software called Stopping and Range of Ions in Matter (SRIM, it is known that Fe and Argon ion penetration into the surface of the thin film are respectively 512 and 603 Angstroms. After that the thin film sample was irradiated with ion Fe and Ar, and the property behavior of the morphological change of thin film were studied through Scanning Electron Microscopy (SEM and Atomic Force Microscopy (AFM. The grain size range of thin filmon diamond films / Si (100 was reduced from 115-322 nm to 147-169 nm, suggesting the effect of irradiation on the surface morphology. The magnetoresistance property is approximately 0.15% at room temperature and magnetic field external H = 0.8 Tesla.

  18. Atomic forces between noble gas atoms, alkali ions, and halogen ions for surface interactions

    Science.gov (United States)

    Wilson, J. W.; Outlaw, R. A.; Heinbockel, J. H.

    1988-01-01

    The components of the physical forces between noble gas atoms, alkali ions, and halogen ions are analyzed and a data base developed from analysis of the two-body potential data, the alkali-halide molecular data, and the noble gas crystal and salt crystal data. A satisfactory global fit to this molecular and crystal data is then reproduced by the model to within several percent. Surface potentials are evaluated for noble gas atoms on noble gas surfaces and salt crystal surfaces with surface tension neglected. Within this context, the noble gas surface potentials on noble gas and salt crystals are considered to be accurate to within several percent.

  19. Challenges in Accommodating Volume Change of Si Anodes for Li-Ion Batteries.

    Science.gov (United States)

    Ko, Minseong; Chae, Sujong; Cho, Jaephil

    2015-11-01

    Si has been considered as a promising alternative anode for next-generation Li-ion batteries (LIBs) because of its high theoretical energy density, relatively low working potential, and abundance in nature. However, Si anodes exhibit rapid capacity decay and an increase in the internal resistance, which are caused by the large volume changes upon Li insertion and extraction. This unfortunately limits their practical applications. Therefore, managing the total volume change remains a critical challenge for effectively alleviating the mechanical fractures and instability of solid-electrolyte-interphase products. In this regard, we review the recent progress in volume-change-accommodating Si electrodes and investigate their ingenious structures with significant improvements in the battery performance, including size-controlled materials, patterned thin films, porous structures, shape-preserving shell designs, and graphene composites. These representative approaches potentially overcome the large morphologic changes in the volume of Si anodes by securing the strain relaxation and structural integrity in the entire electrode. Finally, we propose perspectives and future challenges to realize the practical application of Si anodes in LIB systems.

  20. Radiation Resistance of the U(Al, Si)₃ Alloy: Ion-Induced Disordering.

    Science.gov (United States)

    Meshi, Louisa; Yaniv, Gili; Horak, Pavel; Vacik, Jiri; Mykytenko, Natalia; Rafailov, Gennady; Dahan, Itzchak; Fuks, David; Kiv, Arik

    2018-02-02

    During the exploitation of nuclear reactors, various U-Al based ternary intermetallides are formed in the fuel-cladding interaction layer. Structure and physical properties of these intermetallides determine the radiation resistance of cladding and, ultimately, the reliability and lifetime of the nuclear reactor. In current research, U(Al, Si)₃ composition was studied as a potential constituent of an interaction layer. Phase content of the alloy of an interest was ordered U(Al, Si)₃, structure of which was reported earlier, and pure Al (constituting less than 20 vol % of the alloy). This alloy was investigated prior and after the irradiation performed by Ar ions at 30 keV. The irradiation was performed on the transmission electron microscopy (TEM, JEOL, Japan) samples, characterized before and after the irradiation process. Irradiation induced disorder accompanied by stress relief. Furthermore, it was found that there is a dose threshold for disordering of the crystalline matter in the irradiated region. Irradiation at doses equal or higher than this threshold resulted in almost solely disordered phase. Using the program "Stopping and Range of Ions in Matter" (SRIM), the parameters of penetration of Ar ions into the irradiated samples were estimated. Based on these estimations, the dose threshold for ion-induced disordering of the studied material was assessed.

  1. Radiation Resistance of the U(Al, Si3 Alloy: Ion-Induced Disordering

    Directory of Open Access Journals (Sweden)

    Louisa Meshi

    2018-02-01

    Full Text Available During the exploitation of nuclear reactors, various U-Al based ternary intermetallides are formed in the fuel-cladding interaction layer. Structure and physical properties of these intermetallides determine the radiation resistance of cladding and, ultimately, the reliability and lifetime of the nuclear reactor. In current research, U(Al, Si3 composition was studied as a potential constituent of an interaction layer. Phase content of the alloy of an interest was ordered U(Al, Si3, structure of which was reported earlier, and pure Al (constituting less than 20 vol % of the alloy. This alloy was investigated prior and after the irradiation performed by Ar ions at 30 keV. The irradiation was performed on the transmission electron microscopy (TEM, JEOL, Japan samples, characterized before and after the irradiation process. Irradiation induced disorder accompanied by stress relief. Furthermore, it was found that there is a dose threshold for disordering of the crystalline matter in the irradiated region. Irradiation at doses equal or higher than this threshold resulted in almost solely disordered phase. Using the program “Stopping and Range of Ions in Matter” (SRIM, the parameters of penetration of Ar ions into the irradiated samples were estimated. Based on these estimations, the dose threshold for ion-induced disordering of the studied material was assessed.

  2. Si nanopatterning by reactive ion etching through an on-chip self-assembled porous anodic alumina mask

    Science.gov (United States)

    Gianneta, Violetta; Olziersky, Antonis; Nassiopoulou, Androula G.

    2013-02-01

    We report on Si nanopatterning through an on-chip self-assembled porous anodic alumina (PAA) masking layer using reactive ion etching based on fluorine chemistry. Three different gases/gas mixtures were investigated: pure SF6, SF6/O2, and SF6/CHF3. For the first time, a systematic investigation of the etch rate and process anisotropy was performed. It was found that in all cases, the etch rate through the PAA mask was 2 to 3 times lower than that on non-masked areas. With SF6, the etching process is, as expected, isotropic. By the addition of O2, the etch rate does not significantly change, while anisotropy is slightly improved. The lowest etch rate and the best anisotropy were obtained with the SF6/CHF3 gas mixture. The pattern of the hexagonally arranged pores of the alumina film is, in this case, perfectly transferred to the Si surface. This is possible both on large areas and on restricted pre-defined areas on the Si wafer.

  3. Surface modifications of polypropylene by high energy carbon ions

    International Nuclear Information System (INIS)

    Saha, A.; Chakraborty, V.; Dutta, R.K.; Chintalapudi, S.N.

    2000-01-01

    Polypropylene was irradiated with 12 C ions of 3.6 and 5.4 MeV energies using 3 MV tandem accelerator. The surface modification was investigated by Scanning Electron Microscopy (SEM). Optical changes were monitored by UV-VIS and FTIR spectroscopy. At the lowest ion fluence, only blister formation of various sizes (1-6 μm) was observed. Polymer when irradiated at a fluence of 1x10 14 ions/cm 2 exhibited a network structure. A comparative study on dose dependence of surface and bulk modification has been described. (author)

  4. Formation and properties of thin films of iron silicides on Si(111) Surface: Ab initio simulation

    Science.gov (United States)

    Kuyanov, I. A.; Alekseev, A. A.; Zotov, A. V.

    2012-03-01

    Density functional theory in the generalized gradient approximation has been used to calculate the total energy and model the atomic and electronic structures of thin FeSi films with CsCl type lattice and γ-FeSi2 films with CaF2 fluorite type lattice on a Si(111) surface. It is shown that, upon the adsorption of two monolayers of iron atoms on Si(111), the most energetically favorable process is the growth of a γ-FeSi2 film with CaF2 type structure. The electronic structure of a silicide film formed upon the adsorption of one monolayer of iron atoms exhibits features that are characteristic of both FeSi and γ-FeSi2. The density of states calculated for the γ-FeSi2 well agrees with the experimental photoemission spectra reported in the literature.

  5. BION web server: predicting non-specifically bound surface ions.

    Science.gov (United States)

    Petukh, Marharyta; Kimmet, Taylor; Alexov, Emil

    2013-03-15

    Ions are essential component of the cell and frequently are found bound to various macromolecules, in particular to proteins. A binding of an ion to a protein greatly affects protein's biophysical characteristics and needs to be taken into account in any modeling approach. However, ion's bounded positions cannot be easily revealed experimentally, especially if they are loosely bound to macromolecular surface. Here, we report a web server, the BION web server, which addresses the demand for tools of predicting surface bound ions, for which specific interactions are not crucial; thus, they are difficult to predict. The BION is easy to use web server that requires only coordinate file to be inputted, and the user is provided with various, but easy to navigate, options. The coordinate file with predicted bound ions is displayed on the output and is available for download.

  6. Ionization efficiency estimations for the SPES surface ion source

    Science.gov (United States)

    Manzolaro, M.; Andrighetto, A.; Meneghetti, G.; Rossignoli, M.; Corradetti, S.; Biasetto, L.; Scarpa, D.; Monetti, A.; Carturan, S.; Maggioni, G.

    2013-12-01

    Ion sources play a crucial role in ISOL (Isotope Separation On Line) facilities determining, with the target production system, the ion beam types available for experiments. In the framework of the SPES (Selective Production of Exotic Species) INFN (Istituto Nazionale di Fisica Nucleare) project, a preliminary study of the alkali metal isotopes ionization process was performed, by means of a surface ion source prototype. In particular, taking into consideration the specific SPES in-target isotope production, Cs and Rb ion beams were produced, using a dedicated test bench at LNL (Laboratori Nazionali di Legnaro). In this work the ionization efficiency test results for the SPES Ta surface ion source prototype are presented and discussed.

  7. N + surface doping on nanoscale polymer fabrics via ion implantation

    Science.gov (United States)

    Ho Wong, Kenneth Kar; Zinke-Allmang, Martin; Wan, Wankei

    2006-08-01

    Non-woven poly(vinyl alcohol) (PVA) fabrics composed of small diameter (∼110 nm) fibers have been spun by an electrospinning technique and then have been modified by ion implantation. 1.7 MeV N+ ion implantation with a dose of 1.2 × 1016 ions/cm2 was applied on the fabrics through a metal foil at room temperature. By using scanning electron microscopy (SEM), no surface morphology degradation has been observed on the fabric after the ion beam treatment. The diameter of the fibers has shrunk by 30% to about 74 nm. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) show that nitrogen surface doping was achieved and the formation of two new functional chemical groups (N-Cdbnd O and C-N) in the PVA is observed.

  8. Surface characteristics changes in polymeric material by swift ion beam

    Science.gov (United States)

    Abdul-Kader, A. M.; El-Gendy, Y. A.

    2018-03-01

    In this work, polyethylene (PE) samples were subjected to 9 MeV Cl+2 ions with fluences ranging from 1 × 1013 to 5 × 1014 ion/cm2. Rutherford back scattering spectrometry (RBS), X-ray diffraction (XRD), ultraviolet-visible (UV-vis) spectroscopy and Vicker's micro-hardness (Hv) techniques were used to investigate the compositional transformation, changes in the structure, optical and surface hardness of bombarded samples. The adhesion parameters were analyzed using the contact angle measurements. The obtained results showed that the ion irradiation caused a decrease in the crystallinity of polyethylene and increase in absorption of oxygen on the polymer surface as well. The absorption edge shifted towards the red shift as Cl-ion fluence increases. It was found that the hardness and adhesion parameters increase with increasing the ion beam fluence.

  9. Carbon-Rich Silicon Oxycarbide (SiOC) and Silicon Oxycarbide/Element (SiOC/X, X= Si, Sn) Nano-Composites as New Anode Materials for Li-Ion Battery Application

    OpenAIRE

    Kaspar, Jan

    2014-01-01

    Carbon-rich silicon oxycarbide (SiOC) and silicon oxycarbide/element nano-composites (SiOC/X, X=Si, Sn) are prepared via thermal conversion of polyorganosiloxanes and studied as potential anode material for Li-ion battery application. The obtained materials are characterized by various chemical, structural, electrochemical and electro-analytical methods. The chemical composition and microstructure of the samples is analyzed and correlated with their electrochemical properties and performance....

  10. Si clusters/defective graphene composites as Li-ion batteries anode materials: A density functional study

    International Nuclear Information System (INIS)

    Li, Meng; Liu, Yue-Jie; Zhao, Jing-xiang; Wang, Xiao-guang

    2015-01-01

    Highlights: • We study the interaction between Si clusters with pristine and defective graphene. • We find that the binding strength of Si clusters on graphene can be enhanced to different degrees after introducing various defects. • It is found that both graphene and Si cluster in the Si/graphene composites can preserve their Li uptake ability. - Abstract: Recently, the Si/graphene hybrid composites have attracted considerable attention due to their potential application for Li-ion batteries. How to effectively anchor Si clusters to graphene substrates to ensure their stability is an important factor to determine their performance for Li-ion batteries. In the present work, we have performed comprehensive density functional theory (DFT) calculations to investigate the geometric structures, stability, and electronic properties of the deposited Si clusters on defective graphenes as well as their potential applications for Li-ion batteries. The results indicate that the interfacial bonding between these Si clusters with the pristine graphene is quietly weak with a small adsorption energy (<−0.21 eV). Due to the presence of vacancy site, the binding strength of Si clusters on defective graphene is much stronger than that of pristine one, accompanying with a certain amount of charge transfer from Si clusters to graphene substrates. Moreover, the ability of Si/graphene hybrids for Li uptake is studied by calculating the adsorption of Li atoms. We find that both graphenes and Si clusters in the Si/graphene composites preserve their Li uptake ability, indicating that graphenes not only server as buffer materials for accommodating the expansion of Si cluster, but also provide additional intercalation sites for Li

  11. Magnetoimpedance studies on ion irradiated Co33Fe33Ni7Si7B20 ribbons

    Science.gov (United States)

    Kotagiri, Ganesh; Markandeyulu, G.; Thulasiram, K. V.; Fernandes, W. A.; Misra, D.; Tribedi, L. C.

    2016-04-01

    Magnetoimpedance (MI) effect was studied on amorphous Co33Fe33Ni7Si7B20 ribbons that were irradiated with N+1, Ar+2 and Xe+5 ions, at energy of 75 keV. The (MI)m [maximum MI in each case] values are 9.4% and 11%, 9.9% and 6.5%, the largest, for the as-quenched and N+1, Ar+2 and Xe+5 ion irradiated ribbons respectively, at 2 MHz. The (MI)m value of the N+1 ion irradiated ribbon was observed to be the highest, due to an induced in-plane transverse magnetic anisotropy. The saturation magnetizations of the ion-irradiated ribbons are not seen to change with respect to that of the as-quenched ribbon; a small increase in the Ms was observed only upon irradiation with Xe5+ ions. The interaction between the large number of domains, with large uniaxial anisotropy led to large (MI)m values, at frequencies above 8 MHz in the Ar+2 ion irradiated ribbon.

  12. Surface segregation of dissolved salt ions

    Czech Academy of Sciences Publication Activity Database

    Höfft, O.; Borodin, A.; Kahnert, U.; Kempter, V.; Dang, L. X.; Jungwirth, Pavel

    2006-01-01

    Roč. 110, č. 24, (2006), s. 11971-11976 ISSN 1520-6106 R&D Projects: GA MŠk(CZ) LC512; GA MŠk(CZ) ME 644 Grant - others:NSF(US) CHE0431312; NSF(US) CHE0209719 Institutional research plan: CEZ:AV0Z40550506 Keywords : MIES spectroscopy * molecular dynamics * ion solvation Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 4.115, year: 2006

  13. Evolution of kinetically controlled In-induced surface structure on Si(5 5 7) surface

    Energy Technology Data Exchange (ETDEWEB)

    Chauhan, Amit Kumar Singh [Physics of Energy Harvesting, (CSIR-NPL), Dr. K.S. Krishnan Road, New Delhi 110012 (India); Department of Physics, JMI, New Delhi 110025 (India); Eldose, Nirosh M.; Mishra, Monu [Physics of Energy Harvesting, (CSIR-NPL), Dr. K.S. Krishnan Road, New Delhi 110012 (India); Niazi, Asad; Nair, Lekha [Department of Physics, JMI, New Delhi 110025 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting, (CSIR-NPL), Dr. K.S. Krishnan Road, New Delhi 110012 (India)

    2014-09-30

    Highlights: • Evolution of In induced superstructures on Si(5 5 7) surface during RT and HT adsorption/desorption process. • Kinetics is governed by substrate temperature which exhibits various growth modes (FM, SK, VB) under different conditions. • Strain relaxation play significant role in the commencement of desorption/rearrangement of atoms. • A consolidated phase diagram of In/Si(5 5 7) interface has been reported with new √3 × √3-R30° and 4 × 1 phases. - Abstract: This paper introduces issue of kinetically controlled and temperature driven superstructural phase transition of Indium (In) on atomically clean high index Si(5 5 7)-7 × 1 surface. Auger electron spectroscopy analysis reveals that at room-temperature (RT) with a controlled incident flux of 0.002 ML/s; In overlayers evolve through the Frank-van der Merwe growth mode and yield a (1 × 1) diffraction pattern for coverage ≥1 ML. For substrate temperature <500°C, growth of In follows Stranski–Krastanov growth mode while for temperature >500°C island growth is observed. On annealing the In/Si(5 5 7) interface in the temperature range 250–340°C, clusters to two dimensional (2D) layer transformation on top of a stable monolayer is predominated. In-situ RT and HT adsorption and thermal desorption phenomena revealed the formation of coverage and temperature dependent thermally stable In induced superstructural phases such as (4 × 1) at 0.5 ML (520°C), (√3 × √3-R30°) at 0.3 ML (560°C) and (7 × 7) at 0.1 ML (580°C). These indium induced superstructures could be utilized as potential substrate for the growth of various exotic 1D/2D structures.

  14. Adsorption Mechanisms of NH3 on Chlorinated Si(100)-2 x 1 Surface

    International Nuclear Information System (INIS)

    Lee, Hee Soon; Choi, Cheol Ho

    2012-01-01

    The potential energy surfaces of ammonia molecule adsorptions on the symmetrically chlorinated Si(100)- 2 x 1 surface were explored with SIMOMM:MP2/6-31G(d). It was found that the initial nucleophilic attack by ammonia nitrogen to the surface Si forms a S N 2 type transition state, which eventually leads to an HCl molecular desorption. The second ammonia molecule adsorption requires much less reaction barrier, which can be rationalized by the surface cooperative effect. In general, it was shown that the surface Si-Cl bonds can be easily subjected to the substitution reactions by ammonia molecules yielding symmetric surface Si-NH 2 bonds, which can be a good initial template for subsequent surface chemical modifications. The ammonia adsorptions are in general more facile than the corresponding water adsorption, since ammonia is better nucleophile

  15. Impregnated-electrode-type liquid metal ion source (IV): Extraction of Si, Ge, Sb by using eutectic alloy

    International Nuclear Information System (INIS)

    Chen, G.; Gotoh, Y.; Tsuji, H.; Ishikawa, J.; Takagi, T.

    1985-01-01

    An impregnated-electrode-type liquid metal ion source has been developed in which a sintered porous tungsten tip is used. There has been an increasing interest in liquid metal ion source to obtain focused ion beams. The focused ion beam can perform three useful process steps: direct-write ion implantation to semiconductor, ion sputtering to make thin films and ion exposure to define resist. It is necessary to extract various ions for this purpose. It is possible to extract ions of Ga, Au, and Ag with impregnated-electrode-type liquid metal ion source. For micro-electronic application, ions of Si, Ge and Sb are desirable for doping, but their high melting points or high vapour pressures prohibit their use in elemental form. The purpose of the present investigation is to fabricate eutectic alloys which can be used in impregnated-electrode-type liquid metal ion source. The authors have been successful to obtain ions of Si, Ge and Sb, and revealed relevant basic ion source parameters such as current-voltage characteristics, mass spectra and life time

  16. Electron capture by highly charged ions from surfaces and gases

    Energy Technology Data Exchange (ETDEWEB)

    Allen, F.

    2008-01-11

    In this study highly charged ions produced in Electron Beam Ion Traps are used to investigate electron capture from surfaces and gases. The experiments with gas targets focus on spectroscopic measurements of the K-shell x-rays emitted at the end of radiative cascades following electron capture into Rydberg states of Ar{sup 17+} and Ar{sup 18+} ions as a function of collision energy. The ions are extracted from an Electron Beam Ion Trap at an energy of 2 keVu{sup -1}, charge-selected and then decelerated down to 5 eVu{sup -1} for interaction with an argon gas target. For decreasing collision energies a shift to electron capture into low orbital angular momentum capture states is observed. Comparative measurements of the K-shell x-ray emission following electron capture by Ar{sup 17+} and Ar{sup 18+} ions from background gas in the trap are made and a discrepancy in the results compared with those from the extraction experiments is found. Possible explanations are discussed. For the investigation of electron capture from surfaces, highly charged ions are extracted from an Electron Beam Ion Trap at energies of 2 to 3 keVu{sup -1}, charge-selected and directed onto targets comprising arrays of nanoscale apertures in silicon nitride membranes. The highly charged ions implemented are Ar{sup 16+} and Xe{sup 44+} and the aperture targets are formed by focused ion beam drilling in combination with ion beam assisted thin film deposition, achieving hole diameters of 50 to 300 nm and aspect ratios of 1:5 to 3:2. After transport through the nanoscale apertures the ions pass through an electrostatic charge state analyzer and are detected. The percentage of electron capture from the aperture walls is found to be much lower than model predictions and the results are discussed in terms of a capillary guiding mechanism. (orig.)

  17. Structural properties of the formation of zinc-containing nanoparticles obtained by ion implantation in Si (001 and subsequent thermal annealing

    Directory of Open Access Journals (Sweden)

    Ksenia B. Eidelman

    2017-09-01

    We show that a damaged layer with a large concentration of radiation induced defects forms near the surface as a result of the implantation of Zn+ ions with an energy of 50 keV. In the as-implanted state, nanoparticles of metallic Zn with a size of about 25 nm form at a depth of 40 nm inside the damaged silicon layer. Subsequent annealing at 800 °C in a dry oxygen atmosphere leads to structural changes in the defect layer and the formation of Zn2SiO4 nanoparticles at a depth of 25 nm with an average size of 3 nm, as well as oxidation of the existing Zn particles to the Zn2SiO4 phase. The oxidation of the metallic Zn nanoparticles starts from the surface of the particles and leads to the formation of particles with a “core-shell” structure. Analysis of the phase composition of the silicon layer after two-stage implantation with O+ and Zn+ ions showed that Zn and Zn2SiO4 particles form in the as-implanted state. Subsequent annealing at 800 °C in a dry oxygen atmosphere leads to an increase in the particle size but does not change the phase composition of the near-surface layer. ZnO nanoparticles were not observed under these experimental conditions of ion beam synthesis.

  18. From Molecules to Surfaces: Radical-Based Mechanisms of Si-S and Si-Se Bond Formation on Silicon.

    Science.gov (United States)

    Buriak, Jillian M; Sikder, Md Delwar H

    2015-08-05

    The derivatization of silicon surfaces can have profound effects on the underlying electronic properties of the semiconductor. In this work, we investigate the radical surface chemistry of silicon with a range of organochalcogenide reagents (comprising S and Se) on a hydride-terminated silicon surface, to cleanly and efficiently produce surface Si-S and Si-Se bonds, at ambient temperature. Using a diazonium-based radical initiator, which induces formation of surface silicon radicals, a group of organochalcogenides were screened for reactivity at room temperature, including di-n-butyl disulfide, diphenyl disulfide, diphenyl diselenide, di-n-butyl sulfide, diphenyl selenide, diphenyl sulfide, 1-octadecanethiol, t-butyl disulfide, and t-butylthiol, which comprises the disulfide, diselenide, thiol, and thioether functionalities. The surface reactions were monitored by transmission mode Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy, and time-of-flight secondary ionization mass spectrometry. Calculation of Si-Hx consumption, a semiquantitative measure of yield of production of surface-bound Si-E bonds (E = S, Se), was carried out via FTIR spectroscopy. Control experiments, sans the BBD diazonium radical initiator, were all negative for any evident incorporation, as determined by FTIR spectroscopy. The functional groups that did react with surface silicon radicals included the dialkyl/diphenyl disulfides, diphenyl diselenide, and 1-octadecanethiol, but not t-butylthiol, diphenyl sulfide/selenide, and di-n-butyl sulfide. Through a comparison with the rich body of literature regarding molecular radicals, and in particular, silyl radicals, reaction mechanisms were proposed for each. Armed with an understanding of the reaction mechanisms, much of the known chemistry within the extensive body of radical-based reactivity has the potential to be harnessed on silicon and could be extended to a range of technologically relevant semiconductor

  19. Si clusters/defective graphene composites as Li-ion batteries anode materials: A density functional study

    Science.gov (United States)

    Li, Meng; Liu, Yue-Jie; Zhao, Jing-xiang; Wang, Xiao-guang

    2015-08-01

    Recently, the Si/graphene hybrid composites have attracted considerable attention due to their potential application for Li-ion batteries. How to effectively anchor Si clusters to graphene substrates to ensure their stability is an important factor to determine their performance for Li-ion batteries. In the present work, we have performed comprehensive density functional theory (DFT) calculations to investigate the geometric structures, stability, and electronic properties of the deposited Si clusters on defective graphenes as well as their potential applications for Li-ion batteries. The results indicate that the interfacial bonding between these Si clusters with the pristine graphene is quietly weak with a small adsorption energy (clusters on defective graphene is much stronger than that of pristine one, accompanying with a certain amount of charge transfer from Si clusters to graphene substrates. Moreover, the ability of Si/graphene hybrids for Li uptake is studied by calculating the adsorption of Li atoms. We find that both graphenes and Si clusters in the Si/graphene composites preserve their Li uptake ability, indicating that graphenes not only server as buffer materials for accommodating the expansion of Si cluster, but also provide additional intercalation sites for Li.

  20. Surface texturing of Si3N4–SiC ceramic tool components by pulsed laser machining

    CSIR Research Space (South Africa)

    Tshabalala, LC

    2016-03-01

    Full Text Available Traditional abrasive techniques such as grinding and lapping have long been used in the surface conditioning of engineering materials. However, in the processing of hard and brittle materials like silicon nitride (Si(sub3)N(sub4)), machining...

  1. Controlled fabrication of Si nanocrystal delta-layers in thin SiO{sub 2} layers by plasma immersion ion implantation for nonvolatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Bonafos, C.; Ben-Assayag, G.; Groenen, J.; Carrada, M. [CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse Cedex 04 (France); Spiegel, Y.; Torregrosa, F. [IBS, Rue G Imbert Prolongée, ZI Peynier-Rousset, 13790 Peynier (France); Normand, P.; Dimitrakis, P.; Kapetanakis, E. [NCSRD, Terma Patriarchou Gregoriou, 15310 Aghia Paraskevi (Greece); Sahu, B. S.; Slaoui, A. [ICube, 23 Rue du Loess, 67037 Strasbourg Cedex 2 (France)

    2013-12-16

    Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate insulator of metal-oxide semiconductor devices. We report herein the fabrication of two-dimensional Si-NCs arrays in thin SiO{sub 2} films using PIII and rapid thermal annealing. The effect of plasma and implantation conditions on the structural properties of the NC layers is examined by transmission electron microscopy. A fine tuning of the NCs characteristics is possible by optimizing the oxide thickness, implantation energy, and dose. Electrical characterization revealed that the PIII-produced-Si NC structures are appealing for nonvolatile memories.

  2. Controlled fabrication of Si nanocrystal delta-layers in thin SiO2 layers by plasma immersion ion implantation for nonvolatile memories

    International Nuclear Information System (INIS)

    Bonafos, C.; Ben-Assayag, G.; Groenen, J.; Carrada, M.; Spiegel, Y.; Torregrosa, F.; Normand, P.; Dimitrakis, P.; Kapetanakis, E.; Sahu, B. S.; Slaoui, A.

    2013-01-01

    Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate insulator of metal-oxide semiconductor devices. We report herein the fabrication of two-dimensional Si-NCs arrays in thin SiO 2 films using PIII and rapid thermal annealing. The effect of plasma and implantation conditions on the structural properties of the NC layers is examined by transmission electron microscopy. A fine tuning of the NCs characteristics is possible by optimizing the oxide thickness, implantation energy, and dose. Electrical characterization revealed that the PIII-produced-Si NC structures are appealing for nonvolatile memories

  3. High-resolution, high-linearity temperature sensor using surface acoustic wave device based on LiNbO3/SiO2/Si substrate

    Directory of Open Access Journals (Sweden)

    Xiang-Guang Tian

    2016-09-01

    Full Text Available A high-resolution and high-linearity surface acoustic wave (SAW temperature sensor, consisting of a SAW resonator device fabricated on novel X-cut LiNbO3/SiO2/Si piezoelectric substrate and a resonance frequency readout chip using standard 180 nm CMOS technology, is presented for the first time. High temperature performance substrate LiNbO3/SiO2/Si is prepared mainly by ion implantation and wafer bonding at first. RF SAW device with resonance frequency near 900 MHz is designed and fabricated on the substrate. Traditional probe method using network analyzer and the readout chip method are both implemented to characterize the fabricated SAW device. Further measurement of temperature using resonance frequency shift of SAW device demonstrates the feasibility of the combined system as a portable SAW temperature sensor. The obtained frequency-temperature relation of the fabricated device is almost linear. The frequency resolution of the readout chip is 733 Hz and the corresponding temperature accuracy is 0.016 ° C. Resolution of the sensor in this work is superior to most of the commercial temperature measurement sensors. Theory analysis and finite element simulation are also presented to prove the mechanism and validity of using SAW device for temperature detection applications. We conclude that the high-linearity frequency-temperature relation is achieved by the offset between high-order coefficients of LiNbO3 and SiO2 with opposite signs. This work offers the possibility of temperature measuring in ultra-high precision sensing and control applications.

  4. Ion-beam modifications of the surface morphology and conductivity ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Studies on the surface micromorphology and surface conductivity in thin polymer films of poly vinyl alcohol (PVA) and poly ethylene oxide (PEO) in both as-grown and ion-implanted polymer films have been carried out to reveal certain specific features of the ordered state in these materials. Optical microscopic.

  5. Oxygen surface exchange and oxidative dehydrogenation on oxide ion conductors

    NARCIS (Netherlands)

    Song, C.

    2012-01-01

    The research described in this thesis mainly aims at investigation of the rate of oxygen exchange at the surface of oxide ion conductors. The introduction is given in Chapter 1. A fast and simple method, referred to as pulse 18O-16O isotopic exchange (PIE), for measurement of the rate of surface

  6. Ion-beam modifications of the surface morphology and conductivity ...

    Indian Academy of Sciences (India)

    Studies on the surface micromorphology and surface conductivity in thin polymer films of poly vinyl alcohol (PVA) and poly ethylene oxide (PEO) in both as-grown and ion-implanted polymer films have been carried out to reveal certain specific features of the ordered state in these materials. Optical microscopic ...

  7. Mechanism of oxidation protection of the Si(001) surface by sub-monolayer Sr template

    Energy Technology Data Exchange (ETDEWEB)

    Fredrickson, Kurt D.; Seo, Hosung; Demkov, Alexander A., E-mail: demkov@physics.utexas.edu [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2016-08-14

    We investigate theoretically the oxidation stability of the Si(001) (2 × 1) reconstructed surface passivated by Sr. Using density functional theory, we find that the Sr surface with ½ monolayer of Sr is protected against oxidation. The presence of Sr delays the oxidation of the surface dimer, and even when the dimer is oxidized, O does not react with the back-bond, preventing the unwanted vertical growth of SiO{sub 2}. We also show that ¼ monolayer of Sr protects the Si surface in a different way. In the presence of ¼ monolayer of Sr, O atoms are attracted to the Sr-Si dimer complexes, thus preventing the formation of SiO{sub 2}.

  8. Analyzing heavy-ion-induced charge collection in Si devices by three-dimensional simulation

    International Nuclear Information System (INIS)

    Dodd, P.E.

    1994-01-01

    Properties of charge collection in Si devices in response to single-ion bombardment have been studied using transient three-dimensional drift-diffusion simulation. In unloaded Si diodes, the funnel effect is particularly strong in lightly-doped materials for high-density strikes such as 100 MeV Fe, and essentially all charge collection is by funnel-assisted drift. This drift collection may occur at time scales as late as several nanoseconds, much later than is traditionally associated with drift. For more heavily-doped materials or lower-density strikes, such as 5-MeV α-particles, drift and diffusion play more equal roles. In epitaxial structures the funnel is truncated by the heavily-doped substrate, collapses quickly, and a great deal of charge is collected at late times by diffusion. Charge collection in Si circuitry is influenced by the circuit external to the struck device. Loading effects on charge collection were studied using passive external circuit elements as well as by mixed-mode simulation, which allows modeling of active external circuitry. Simulations indicate that the funnel can be significantly affected by the inclusion of passive loads, while active loads may prevent any direct charge collection by funneling. Finally, the use of three-dimensional device simulators is presented as a method of analyzing results obtained from focused ion microbeam experiments

  9. Simultaneous Perforation and Doping of Si Nanoparticles for Lithium-Ion Battery Anode.

    Science.gov (United States)

    Lv, Guangxin; Zhu, Bin; Li, Xiuqiang; Chen, Chuanlu; Li, Jinlei; Jin, Yan; Hu, Xiaozhen; Zhu, Jia

    2017-12-27

    Silicon nanostructures have served as promising building blocks for various applications, such as lithium-ion batteries, thermoelectrics, and solar energy conversions. Particularly, control of porosity and doping is critical for fine-tuning the mechanical, optical, and electrical properties of these silicon nanostructures. However, perforation and doping are usually separated processes, both of which are complicated and expensive. Here, we demonstrate that the porous nano-Si particles with controllable dopant can be massively produced through a facile and scalable method, combining ball-milling and acid-etching. Nano-Si with porosity as high as 45.8% can be achieved with 9 orders of magnitude of conductivity changes compared to intrinsic silicon. As an example for demonstration, the obtained nano-Si particles with 45.8% porosity and 3.7 atom % doping can serve as a promising anode for lithium-ion batteries with 2000 mA h/g retained over 100 cycles at the current density of 0.5 C, excellent rate performance with 1600 mA h/g at the current density of 5 C, and a stable cycling performance of above 1500 mA h/g retained over 940 cycles at the current density of 1 C with carbon coating.

  10. Enhanced absorption in Au nanoparticles/a-Si:H/c-Si heterojunction solar cells exploiting Au surface plasmon resonance

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, Maria; Giangregorio, Maria M.; Bianco, Giuseppe V.; Sacchetti, Alberto; Capezzuto, Pio; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy)

    2009-10-15

    Au nanoparticles (NPs)/(n-type)a-Si:H/(p-type)c-Si heterojunctions have been deposited combining plasma-enhanced chemical-vapour deposition (PECVD) with Au sputtering. We demonstrate that a density of {proportional_to}1.3 x 10{sup 11} cm{sup -2} of Au nanoparticles with an approximately 20 nm diameter deposited onto (n-type)a-Si:H/(p-type)c-Si heterojunctions enhance performance exploiting the improved absorption of light by the surface plasmon resonance of Au NPs. In particular, Au NPs/(n-type)a-Si:H/(p-type)c-Si show an enhancement of 20% in the short-circuit current, J{sub SC}, 25% in the power output, P{sub max} and 3% in the fill factor, FF, compared to heterojunctions without Au NPs. Structures have been characterized by spectroscopic ellipsometry, atomic force microscopy and current-voltage (I-V) measurements to correlate the plasmon resonance-induced enhanced absorption of light with photovoltaic performance. (author)

  11. Supertetrahedral networks and lithium-ion mobility in Li{sub 2}SiP{sub 2} and LiSi{sub 2}P{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Haffner, Arthur; Braeuniger, Thomas; Johrendt, Dirk [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen (Germany)

    2016-10-17

    The new phosphidosilicates Li{sub 2}SiP{sub 2} and LiSi{sub 2}P{sub 3} were synthesized by heating the elements at 1123 K and characterized by single-crystal X-ray diffraction. Li{sub 2}SiP{sub 2} (I4{sub 1}/acd, Z=32, a=12.111(1) Aa, c=18.658(2) Aa) contains two interpenetrating diamond-like tetrahedral networks consisting of corner-sharing T2 supertetrahedra [(SiP{sub 4/2}){sub 4}]. Sphalerite-like interpenetrating networks of uniquely bridged T4 and T5 supertetrahedra make up the complex structure of LiSi{sub 2}P{sub 3} (I4{sub 1}/a, Z=100, a=18.4757(3) Aa, c=35.0982(6) Aa). The lithium ions are located in the open spaces between the supertetrahedra and coordinated by four to six phosphorus atoms. Temperature-dependent {sup 7}Li solid-state MAS NMR spectroscopic data indicate high mobility of the Li{sup +} ions with low activation energies of 0.10 eV in Li{sub 2}SiP{sub 2} and 0.07 eV in LiSi{sub 2}P{sub 3}. (copyright 2016 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Influence of a-Si:H deposition power on surface passivation property and thermal stability of a-Si:H/SiNx:H stacks

    Directory of Open Access Journals (Sweden)

    Hua Li

    2012-06-01

    Full Text Available The effectiveness of hydrogenated amorphous silicon (a-Si:H layers for passivating crystalline silicon surfaces has been well documented in the literature for well over a decade. One limitation of such layers however has arisen from their inability to withstand temperatures much above their deposition temperature without significant degradation. This limitation is of importance particularly with multicrystalline silicon materials where temperatures of at least 400°C are needed for effective hydrogenation of the crystallographic defects such as grain boundaries. To address this limitation, in this work the surface passivation quality and thermal stability of a stack passivating system, combining a layer of intrinsic a-Si:H and a capping layer of silicon nitride (SiNx:H, on p-type crystalline silicon wafers is studied and optimized. In particular the sensitivity of different microwave (MW power levels for underlying a-Si:H layer deposition are examined. Both effective minority carrier lifetime (ζeff measurement and Fourier transform infrared (FTIR spectrometry were employed to study the bonding configurations, passivating quality and thermal stability of the a-Si:H/SiNx:H stacks. It is established that the higher MW power could result in increased as-deposited ζeff and implied Voc (iVoc values, indicating likely improved surface passivation quality, but that this combination degrades more quickly when exposed to prolonged thermal treatments. The more dihydride-rich film composition corresponding to the higher MW power appears to be beneficial for bond restructuring by hydrogen interchanges when exposed to short term annealing, however it also appears more susceptible to providing channels for hydrogen out-effusion which is the likely cause of the poorer thermal stability for prolonged high temperature exposure compared with stacks with underlying a-Si:H deposited with lower MW power.

  13. In situ analysis of ion-induced polymer surface modification using secondary ion mass spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Okuji, Shigeto, E-mail: s-okuji@post.lintec.co.jp [Lintec Corporation, 5-14-42 Nishiki-cho, Warabi, Saitama 335-0005 (Japan); Quantum Beam Unit, National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003 (Japan); University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan); Kitazawa, Hideaki [Quantum Beam Unit, National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003 (Japan); Takeda, Yoshihiko, E-mail: TAKEDA.Yoshihiko@nims.go.jp [Quantum Beam Unit, National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003 (Japan); University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

    2016-06-15

    We have investigated the surface modification process consisting of ion irradiation immediately followed by exposure to ambient gas for three types of polymers having the same main chain, −C−C−, but different atoms bound to the main chain, using in situ secondary ion mass spectroscopy. The polymers’ surface was irradiated with 30 keV Au ions at a total fluence for up to 1 × 10{sup 17} cm{sup −2} and exposed to ambient gas in a ultra-high-vacuum chamber (1 × 10{sup −6} Pa) for 30 min after the ion irradiation. Low density polyethylene mainly exhibited a hydrogen dissociation during the ion irradiation and a recombination with hydrogen atoms by the exposure, polytetrafluoroethylene mainly showed a main chain scission and no recombination during the exposure, and polyvinylidene difluoride lost hydrogen and fluorine atoms by the ion irradiation and partially recombined with hydrogen and fluorine atoms upon the exposure. The deposited energy density on the polymer surfaces reflects the dependence of the modification on the incident ion species, Au or Ga ions.

  14. Fabrication of Si surface pattern by Ar beam irradiation and annealing method

    International Nuclear Information System (INIS)

    Zhang, J.; Momota, S.; Maeda, K.; Terauchi, H.; Furuta, M.; Kawaharamura, T.; Nitta, N.; Wang, D.

    2012-01-01

    The fabrication process of crater structures on Si crystal has been studied by an irradiation of Ar beam and a thermal annealing at 600 °C. The fabricated surface was measured by field emission scanning electron microscope and atomic force microscope. The results have shown the controllability of specifications of crater formation such as density, diameter and depth by changing two irradiation parameters, fluence and energy of Ar ions. By changing the fluence over a range of 1 ∼ 10 × 10 16 /cm 2 , we could control a density of crater 0 ∼ 39 counts/100μm 2 . By changing the energy over a range of 90 ∼ 270 keV, we could control a diameter and a depth of crater in 0.8 ∼ 4.1μm and 99 ∼ 229nm, respectively. The present result is consistent with the previously proposed model that the crater structure would be arising from an exfoliated surface layer of silicon. The present result has indicated the possibility of the crater production phenomena as a hopeful method to fabricate the surface pattern on a micro-nano meter scale.

  15. Modification of polyvinyl alcohol surface properties by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Pukhova, I.V., E-mail: ivpuhova@mail.ru [National Research Tomsk State University, 36 Lenin Ave, Tomsk 634050 (Russian Federation); Institute of High Current Electronics, 2/3 Akademichesky Ave, Tomsk 634055 (Russian Federation); Kurzina, I.A. [National Research Tomsk State University, 36 Lenin Ave, Tomsk 634050 (Russian Federation); Savkin, K.P. [Institute of High Current Electronics, 2/3 Akademichesky Ave, Tomsk 634055 (Russian Federation); Laput, O.A. [National Research Tomsk Polytechnic University, 30 Lenin Ave, Tomsk 634050 (Russian Federation); Oks, E.M. [Institute of High Current Electronics, 2/3 Akademichesky Ave, Tomsk 634055 (Russian Federation)

    2017-05-15

    We describe our investigations of the surface physicochemical properties of polyvinyl alcohol modified by silver, argon and carbon ion implantation to doses of 1 × 10{sup 14}, 1 × 10{sup 15} and 1 × 10{sup 16} ion/cm{sup 2} and energies of 20 keV (for C and Ar) and 40 keV (for Ag). Infrared spectroscopy (IRS) indicates that destructive processes accompanied by chemical bond (−C=O) generation are induced by implantation, and X-ray photoelectron spectroscopy (XPS) analysis indicates that the implanted silver is in a metallic Ag3d state without stable chemical bond formation with polymer chains. Ion implantation is found to affect the surface energy: the polar component increases while the dispersion part decreases with increasing implantation dose. Surface roughness is greater after ion implantation and the hydrophobicity increases with increasing dose, for all ion species. We find that ion implantation of Ag, Ar and C leads to a reduction in the polymer microhardness by a factor of five, while the surface electrical resistivity declines modestly.

  16. Friction of self-lubricating surfaces by ion beam techniques. Final technical report

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, R.S.; Rai, A.K.

    1992-05-01

    UES, Inc. conducted a research and development program designed to establish conditions for ion implantation/mixing of suitable additives into the surfaces of bulk ceramics and metals for obtaining self-lubricating low friction and wear characteristics. The substrates considered were ZrO{sub 2}, Al{sub 2}O{sub 3}, Si{sub 3}N{sub 4}, steel and Ni-base superalloy. The lubricant additives chosen were BaF{sub 2}/CaF{sub 2}Ag, MoS{sub 2}, WS{sub 2}and B{sub 2}O{sub 3}. The initial tasks of the program were to synthesis these lubricant compounds by co-implantation of constituent elements if sufficient beams of desired elements were obtained. The final tasks were to investigate high energy (MeV) ion mixing of deposited coatings as well as to investigate ion beam assisted deposition using low energy ion beams. It was shown that MoS{sub 2} can be synthesized by co-implantation of Mo{sup +} and S{sup +} in ceramic materials with appropriate choice of energies to obtain nearly overlapping depth profiles. The sliding life of DC magnetron sputtered MoS{sub 2} films of thicknesses {approximately}7500{Angstrom} on ceramic materials such as sapphire, Si{sub 3}N{sub 4} and ZrO{sub 3} were improved by ten to thousand fold after 2 Mev Ag{sup +} ion mixing. Ion beam assisted deposition (IBAD) and ion beam mixing were utilized to fabricate self-lubricating coatings of CaF{sub 2}/Ag and BaF/CaF{sub 2}/Ag composites.

  17. Surface modifications of crystal-ion-sliced LiNbO3 thin films by low energy ion irradiations

    Science.gov (United States)

    Bai, Xiaoyuan; Shuai, Yao; Gong, Chaoguan; Wu, Chuangui; Luo, Wenbo; Böttger, Roman; Zhou, Shengqiang; Zhang, Wanli

    2018-03-01

    Single crystalline 128°Y-cut LiNbO3 thin films with a thickness of 670 nm are fabricated onto Si substrates by means of crystal ion slicing (CIS) technique, adhesive wafer bonding using BCB as the medium layer to alleviate the large thermal coefficient mismatch between LiNbO3 and Si, and the X-ray diffraction pattern indicates the exfoliated thin films have good crystalline quality. The LiNbO3 thin films are modified by low energy Ar+ irradiation, and the surface roughness of the films is decreased from 8.7 nm to 3.4 nm. The sputtering of the Ar+ irradiation is studied by scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy, and the results show that an amorphous layer exists at the surface of the exfoliated film, which can be quickly removed by Ar+ irradiation. A two-stage etching mechanism by Ar+ irradiation is demonstrated, which not only establishes a new non-contact surface polishing method for the CIS-fabricated single crystalline thin films, but also is potentially useful to remove the residue damage layer produced during the CIS process.

  18. Structure of the Si(1 1 3) surface studied by surface X-ray diffraction

    International Nuclear Information System (INIS)

    Mizuno, Yoshihito; Akimoto, Koichi; Aoyama, Tomohiro; Suzuki, Hidetoshi; Nakahara, Hitoshi; Ichimiya, Ayahiko; Sumitani, Kazushi; Takahashi, Toshio; Zhang Xiaowei; Sugiyama, Hiroshi; Kawata, Hiroshi

    2004-01-01

    We carried out a grazing incidence X-ray diffraction analysis of the Si(1 1 3) 3 x 1 surface using synchrotron radiation. We compared the experimental structure factors obtained from the integrated intensities of the fractional-order reflections with the calculated structure factors of the dimerized structure model of Ranke. By minimizing the R-factor, we determined the position and the size of the pentagon in the 3 x 1 dimerized structure model of Ranke. In addition, we found that a model with randomly distributed interstitial atoms at the center of the pentagon gives a smaller R-factor value

  19. 125 MeV Si 9+ ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

    Science.gov (United States)

    Elayaraja, K.; Joshy, M. I. Ahymah; Suganthi, R. V.; Kalkura, S. Narayana; Palanichamy, M.; Ashok, M.; Sivakumar, V. V.; Kulriya, P. K.; Sulania, I.; Kanjilal, D.; Asokan, K.

    2011-01-01

    Titanium substrate was coated with hydroxyapatite by radiofrequency magnetron sputtering (rf-magnetron sputtering) technique and subjected to swift heavy ion (SHI) irradiation of 125 MeV with Si 9+ at fluences of 1 × 10 10, 1 × 10 11 and 1 × 10 12 ions/cm 2. The glancing incidence X-ray diffraction (GIXRD) analysis confirmed the HAp phase of the irradiated film. There was a considerable decrease in crystallinity and particle size after irradiation. In addition, DRS-UV reflectance spectra revealed a decrease in optical band gap ( Eg) from 5.2 to 4.6 eV. Wettability of biocompatible materials plays an important role in biological cells proliferation for tissue engineering, drug delivery, gene transfer and bone growth. HAp thin films irradiated with 1 × 10 11 ions/cm 2 fluence showed significant increase in wettability. While the SHI irradiated samples exhibited enhanced bioactivity, there was no significant variation in cell viability. Surface roughness, pores and average particle size were analyzed by atomic force microscopy (AFM).

  20. Optical and electrical properties of disordered layers in GaAs crystals produced by Si+ ion implantation

    International Nuclear Information System (INIS)

    Shigetomi, S.; Matsumori, T.

    1981-01-01

    The ion dose dependence and the annealing behavior of GaAs after implantation with 200 keV 2 x 10 12 -2 x 10 16 Si + ions/cm 2 as studied by using optical absorption, reflection, photoluminescence, sheet-resistivity, Hall effect and field effect methods. The experimental results of the optical absorption and reflection indicate that, when annealed at about 400 0 C, the disordered layers produced by high-dose implantation (2 x 10 15 -2 x 10 16 ions/cm 2 ), reorder epitaxially on the underlying crystal leaving relatively little residual disorder in the near-surface. However, from the experimental results of optical reflection, 800 0 C annealing is required for perfect recrystallization. The temperature dependence of the sheet-resistivity, with annealing temperature as a parameter, indicates that, next to the variable-range hopping and phonon-assisted hopping regions, a new region is observed. Holes, thermally-activated from localized states near the Fermi level Esub(F) to the mobility edge Esub(V) near the valence band, are responsible for electrical conduction in this region. (orig.)

  1. Short Communication on "In-situ TEM ion irradiation investigations on U3Si2 at LWR temperatures"

    Science.gov (United States)

    Miao, Yinbin; Harp, Jason; Mo, Kun; Bhattacharya, Sumit; Baldo, Peter; Yacout, Abdellatif M.

    2017-02-01

    The radiation-induced amorphization of U3Si2 was investigated by in-situ transmission electron microscopy using 1 MeV Kr ion irradiation. Both arc-melted and sintered U3Si2 specimens were irradiated at room temperature to confirm the similarity in their responses to radiation. The sintered specimens were then irradiated at 350 °C and 550 °C up to 7.2 × 1015 ions/cm2 to examine their amorphization behavior under light water reactor (LWR) conditions. U3Si2 remains crystalline under irradiation at LWR temperatures. Oxidation of the material was observed at high irradiation doses.

  2. Dependence of the structure of ion-modified NiTi single crystal layers on the orientation of irradiated surface

    Science.gov (United States)

    Poletika, T. M.; Meisner, L. L.; Girsova, S. L.; Tverdokhlebova, A. V.; Meisner, S. N.

    2017-07-01

    The composition and structure of Si layers implanted into titanium nickelide single crystals with different orientations relative to the ion beam propagation direction have been studied using Auger electron spectroscopy and transmission electron microscopy. The role of the "soft" [111]B2 and "hard" [001]B2 NiTi orientations in the formation of the structure of ion-modified surface layer, as well as the defect structure of the surface layers of the single crystals, has been revealed. Orientation effects of selective sputtering and channeling of ions, which control the composition and thickness of the oxide and amorphous layers being formed, ion and impurity penetration depth, as well as the concentration profile of the Ni distribution over the surface, have been detected.

  3. Lithiation Behavior of High Capacity SiCO Anode Material for Lithium-ion Battery: A First Principle Study

    International Nuclear Information System (INIS)

    Liao, Ningbo; Zheng, Beirong; Zhou, Hongming; Xue, Wei

    2015-01-01

    Polymer-derived silicon oxycarbide (SiCO) has a reversible capacity of ∼800 mA h g −1 and is considered as a promising anode material for Li-ion battery. Further study needs to be conducted in terms of energy and structure in atomic scale, which could be very challenging for current experimental technologies. To better understand the mechanism of lithium insertion in SiCO, first principle calculations are performed to study the atomic structures, bonding mechanism, mechanical properties and lithiation voltage of lithiated SiC 1/4 O 7/4 . The predominate feature of the lithiated configuration is the presence of several Li involved tetrahedrons with the formation of Li−C/Li−O bonds. By the calculations of relative volume and bulk modulus, SiC 1/4 O 7/4 presents a considerably better performance in expansion and mechanical property than Si and SiO 1/3 . The formation energy and voltage curve also show that the lithium is more preferable in incorporation with SiC 1/4 O 7/4 than Si and SiO 1/3 , which is attributed to the formation of Li−O, Li−C bonds and corresponding Li involved tetrahedrons. Our calculations are in agreement with the available experiments, and provide a deeper insight into the lithiation mechanism of SiCO anode for Li-ion batteries

  4. Ion photon-stimulated desorption as a tool to monitor the physisorption to chemisorption transition of benzene on Si(111) 7 x 7

    CERN Document Server

    Carbone, M; Casaletto, M P; Zanoni, R; Besnard-Ramage, M J; Comtet, G; Dujardin, G; Hellner, L

    2003-01-01

    We investigated the use of ion photodesorption as a tool to monitor the transition from the physisorbed to the chemisorbed state on a surface. The adsorption of benzene on Si(111) 7 x 7 in the temperature range 40-300 K is chosen as a prototype. The D sup + ion photodesorption yield was monitored as a function of temperature at various benzene exposures. Comparative measurements of the C 1s photoelectron yield in the same temperature range enable the physisorbed to chemisorbed state transition to be distinguished from that of the multilayer to the chemisorbed state. We find the onset at 110 K in the first case, and at 130-140 K in the second case. These results demonstrate that ion photodesorption is a potentially interesting method to identify physisorption to chemisorption transitions of adsorbed molecules on surfaces. (letter to the editor)

  5. Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime.

    Science.gov (United States)

    Pastuović, Željko; Siegele, Rainer; Capan, Ivana; Brodar, Tomislav; Sato, Shin-Ichiro; Ohshima, Takeshi

    2017-11-29

    We characterized intrinsic deep level defects created in ion collision cascades which were produced by patterned implantation of single accelerated 2.0 MeV He and 600 keV H ions into n-type 4H-SiC epitaxial layers using a fast-scanning reduced-rate ion microbeam. The initial deep level transient spectroscopy measurement performed on as-grown material in the temperature range 150-700 K revealed the presence of only two electron traps, Z 1/2 (0.64 eV) and EH 6/7 (1.84 eV) assigned to the two different charge state transitions of the isolated carbon vacancy, V C (=/0) and (0/+). C-V measurements of as-implanted samples revealed the increasing free carrier removal with larger ion fluence values, in particular at depth corresponding to a vicinity of the end of an ion range. The first DLTS measurement of as-implanted samples revealed formation of additional deep level defects labelled as ET1 (0.35 eV), ET2 (0.65 eV) and EH3 (1.06 eV) which were clearly distinguished from the presence of isolated carbon vacancies (Z 1/2 and EH 6/7 defects) in increased concentrations after implantations either by He or H ions. Repeated C-V measurements showed that a partial net free-carrier recovery occurred in as-implanted samples upon the low-temperature annealing following the first DLTS measurement. The second DLTS measurement revealed the almost complete removal of ET2 defect and the partial removal of EH3 defect, while the concentrations of Z 1/2 and EH 6/7 defects increased, due to the low temperature annealing up to 700 K accomplished during the first temperature scan. We concluded that the ET2 and EH3 defects: (i) act as majority carrier removal traps, (ii) exhibit a low thermal stability and (iii) can be related to the simple point-like defects introduced by light ion implantation, namely interstitials and/or complex of interstitials and vacancies in both carbon and silicon sub-lattices.

  6. Induction of surface modification of polytetrafluoroethylene with proton ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Noh, I. S.; Kim, H. R.; Choi, Y. J.; Park, H. S. [Seoul National Univ. of Technology, Seoul (Korea, Republic of)

    2007-04-15

    Cardiovascular disease is one of the leading causes of the death in the USA and developed countries. More than 570,000 artery bypass graft surgeries per USA are performed each year, though percutaneous devices have abounded in extreme cases. Based on the surgery follow-ups, large diameter expanded polytetrafluoroethylene (ePTFE) (>5 mm) are clinically employed with good results but its clinical applications in smaller vessels is still problematic due to thrombosis and neointima formation. Achievement of high patency grafts has been to some extent achieved by numerous methods of surface modification techniques, but its results are less than its initial hopes. As examples, endothelial cells coated on the luminal surface of ePTFE has demonstrated limited success after recirculation. Surface modifications of PTFE film with either argon ion beam or UV light from Xe-excimer lamp were reported to increase its interaction with vascular endothelial cell. Surface modification of poly(lactide-co-glycolide)[PLGA] is also very important in tissue engineering, in where induction of its initial high cellular adhesion and spreading is a critical step for development of tissue engineering medical products. We previously reported tissue engineering of the hybrid ePTFE scaffold by seeding smooth muscle cells and subsequently evaluation of its tissue regeneration behaviors and stabilities with circulation of pulsatile flow. To improve its tissue engineering more quickly, we here performed surface modification of ePTFE and porous PLGA scaffold and evaluated its subsequent chemical and biological properties after treating its surface with low energy ion beams. The porous ePTFE was prepared in a round shape (diameter = 1 cm) and dried after organic solvent extraction for ion beam treatment. Another porous PLGA layers (d = 1 cm, t = 1 cm with approximately 92% porosity) were fabricated and treated its surface by irradiating low energy either nitrogen or argon ion beams (1 keV, 1x1015 ions

  7. Induction of surface modification of polytetrafluoroethylene with proton ion beams

    International Nuclear Information System (INIS)

    Noh, I. S.; Kim, H. R.; Choi, Y. J.; Park, H. S.

    2007-04-01

    Cardiovascular disease is one of the leading causes of the death in the USA and developed countries. More than 570,000 artery bypass graft surgeries per USA are performed each year, though percutaneous devices have abounded in extreme cases. Based on the surgery follow-ups, large diameter expanded polytetrafluoroethylene (ePTFE) (>5 mm) are clinically employed with good results but its clinical applications in smaller vessels is still problematic due to thrombosis and neointima formation. Achievement of high patency grafts has been to some extent achieved by numerous methods of surface modification techniques, but its results are less than its initial hopes. As examples, endothelial cells coated on the luminal surface of ePTFE has demonstrated limited success after recirculation. Surface modifications of PTFE film with either argon ion beam or UV light from Xe-excimer lamp were reported to increase its interaction with vascular endothelial cell. Surface modification of poly(lactide-co-glycolide)[PLGA] is also very important in tissue engineering, in where induction of its initial high cellular adhesion and spreading is a critical step for development of tissue engineering medical products. We previously reported tissue engineering of the hybrid ePTFE scaffold by seeding smooth muscle cells and subsequently evaluation of its tissue regeneration behaviors and stabilities with circulation of pulsatile flow. To improve its tissue engineering more quickly, we here performed surface modification of ePTFE and porous PLGA scaffold and evaluated its subsequent chemical and biological properties after treating its surface with low energy ion beams. The porous ePTFE was prepared in a round shape (diameter = 1 cm) and dried after organic solvent extraction for ion beam treatment. Another porous PLGA layers (d = 1 cm, t = 1 cm with approximately 92% porosity) were fabricated and treated its surface by irradiating low energy either nitrogen or argon ion beams (1 keV, 1x1015 ions

  8. SiOx-C dual-phase glass for lithium ion battery anode with high capacity and stable cycling performance

    Science.gov (United States)

    Lv, Pengpeng; Zhao, Hailei; Gao, Chunhui; Du, Zhihong; Wang, Jie; Liu, Xin

    2015-01-01

    Glass-like Si-O-C composites have recently attracted considerable attention because of their potential as high capacity anode for rechargeable lithium ion batteries. However, the existence of Si-C bonds in Si-O-C phase restricts in a certain degree the electrochemical activity of silicon. Here, we demonstrate the synthesis and electrochemical performance of SiOx-C dual-phase glass consisting of amorphous SiOx and free carbon phases and without Si-C bonds in SiOx phase. Dual-phase glass synthesis is achieved through a simple sol-gel route. The SiOx-C dual-phase glass electrode delivers high reversible capacity of 840 mAh g-1 for 100 cycles and exhibits excellent rate-capability. The superior electrochemical properties can be attributed to the unique dual-phase glass structure that the amorphous SiOx phase well-disperses and dense-contacts with free carbon component at nanoscale level. The SiOx phase with a lower O/Si ratio contributes the high reversible capacity while the well-contacted free carbon provides a good electronic conductivity for electrode reaction. In addition, the free carbon component can alleviate the volume change of SiOx component during discharge/charge process, which ensures an enhanced structural stability and an excellent cycling performance.

  9. Investigation of ion diffusion towards plasmonic surfaces

    International Nuclear Information System (INIS)

    Gmucova, K.; Nadazdy, V.; Vojtko, A.; Majkova, E.; Kotlar, M.

    2013-01-01

    Plasmonic sensors have recently attracted much attention. The past few decades have seen a massive and continued interest in studying electrochemical processes at artificially structured electrodes. Such electrochemical sensors provide sensitive, selective, and easy to use approaches to the detection of many chemical species, e.g. environmental pollutants, biomolecules, drugs etc. The issue raised in this paper is to study the kinetic of the diffusion towards plasmonic surfaces in dark and under illumination with white LED diode. The possibility to use anomalous charge transfer towards plasmonic surfaces in electrochemical sensorics will be discussed, too. (authors)

  10. Preparation and study of the porous Si surfaces obtained by electrochemical method

    Directory of Open Access Journals (Sweden)

    V.G. Lytovchenko

    2017-12-01

    Full Text Available Review of original results concerning electrochemical formation of porous Si layers and investigation of properties inherent to the formed layers has been presented. The results related with observation of changes in pores’ morphology depending on the etching conditions, correlation of morphology of the porous layers with their surface composition, photoluminescence and structural characteristics, catalytic activity of porous Si based MIS structures as well as theoretical modeling of the kinetics and mechanisms of the porous Si growth have been described.

  11. Surface and Interface Studies with Radioactive Ions

    CERN Multimedia

    Weber, A

    2002-01-01

    Investigations on the atomic scale of magnetic surfaces and magnetic multilayers were performed by Perturbed Angular Correlation (PAC) spectroscopy. The unique combination of the Booster ISOLDE facility equipped with a UHV beamline and the UHV chamber ASPIC (Apparatus for Surface Physics and Interfaces at CERN) is ideally suited for such microscopic studies. Main advantages are the choice of problem-oriented radioactive probes and the purity of mass-separated beams. The following results were obtained: $\\,$i) Magnetic hyperfine fields (B$_{hf}$) of Se on Fe, Co, Ni surfaces were determined. The results prompted a theoretical study on the B$_{hf}$ values of the 4sp-elements in adatom position on Ni and Fe, confirming our results and predicting unexpected behaviour for the other elements. $\\,$ii) Exemplarily we have determined B$_{hf}$ values of $^{111}$Cd at many different adsorption sites on Ni surfaces. We found a strong dependence on the coordination number of the probes. With decreasing coordination nu...

  12. Negative ion sources equipped with continuous annular and spherical geometry surface ionizers

    International Nuclear Information System (INIS)

    Alton, G.D.; Mills, G.D.

    1985-01-01

    Axial geometry negative ion sources have been designed, developed, and evaluated for use in conjunction with tandem accelerator applications. These sources utilize continuous surface solid tungsten ionizers in either annular or spherical geometries to effect ionization of cesium vapor, which in turn is used to sputter a negatively biased probe containing the material of interest. The annular ionizer geometry source has been incorporated as an ''on-line'' source for routine operation of the Holifield Heavy Ion Research Facility (HHIRF) tandem accelerator. Both test stand and tandem accelerator operational experience indicate that such sources are reliable, long lived, stably operating and prolific producers of a wide spectrum of negative ions. To date these sources have been used to produce more than 18 negative ion species including Ag - , Au - , B - , CaH 3 - , Cl - , CrH 2 - , Cu - , Lu - , MgH 3 - , Mo - , Ni - , O - , S - , Si - , Sn - , TiH 3 - , Tm - , and Yb - . Details of the mechanical design features and computational techniques utilized in arriving at the final electrode configuration are presented in the text. Examples of data pertinent to source operation, the dependence of negative ion yields on certain source operational parameters and of intensities typical of a particular negative ion source are also given. 12 refs., 10 figs

  13. Mesoscale Origin of the Enhanced Cycling-Stability of the Si-Conductive Polymer Anode for Li-ion Batteries

    Science.gov (United States)

    Gu, Meng; Xiao, Xing-Cheng; Liu, Gao; Thevuthasan, Suntharampillai; Baer, Donald R.; Zhang, Ji-Guang; Liu, Jun; Browning, Nigel D.; Wang, Chong-Min

    2014-01-01

    Electrode used in lithium-ion battery is invariably a composite of multifunctional components. The performance of the electrode is controlled by the interactive function of all components at mesoscale. Fundamental understanding of mesoscale phenomenon sets the basis for innovative designing of new materials. Here we report the achievement and origin of a significant performance enhancement of electrode for lithium ion batteries based on Si nanoparticles wrapped with conductive polymer. This new material is in marked contrast with conventional material, which exhibit fast capacity fade. In-situ TEM unveils that the enhanced cycling stability of the conductive polymer-Si composite is associated with mesoscale concordant function of Si nanoparticles and the conductive polymer. Reversible accommodation of the volume changes of Si by the conductive polymer allows good electrical contact between all the particles during the cycling process. In contrast, the failure of the conventional Si-electrode is probed to be the inadequate electrical contact. PMID:24418812

  14. Carbon surface diffusion and SiC nanocluster self-ordering

    International Nuclear Information System (INIS)

    Pezoldt, J.; Trushin, Yu.V.; Kharlamov, V.S.; Schmidt, A.A.; Cimalla, V.; Ambacher, O.

    2006-01-01

    The process of the spatial ordering of SiC nanoclusters on the step edges on Si surfaces was studied by means of multi-scale computer simulation. The evolution of cluster arrays on an ideal flat surface and surfaces with terraces of various widths was performed by kinetic Monte Carlo (KMC) simulations based on quantitative studies of potential energy surfaces (PES) by molecular dynamics (MD). PES analysis revealed that certain types of steps act as strong trapping centres for both Si and C adatoms stimulating clusters nucleation. Spatial ordering of the SiC nanoclusters at the terrace edges can be achieved if the parameters of the growth process (substrate temperature, carbon flux) and substrate (steps direction and terrace widths) are adjusted to the surface morphology. Temperature ranges for growth regimes with and without formation of cluster chains were determined. Cluster size distributions and the dependence of optimal terrace width for self ordering on the deposition parameters were obtained

  15. Discrete impurity band from surface danging bonds in nitrogen and phosphorus doped SiC nanowires

    Science.gov (United States)

    Li, Yan-Jing; Li, Shu-Long; Gong, Pei; Li, Ya-Lin; Cao, Mao-Sheng; Fang, Xiao-Yong

    2018-04-01

    The electronic structure and optical properties of the nitrogen and phosphorus doped silicon carbide nanowires (SiCNWs) are investigated using first-principle calculations based on density functional theory. The results show doping can change the type of the band gap and improve the conductivity. However, the doped SiCNWs form a discrete impurity levels at the Fermi energy, and the dispersion degree decreases with the diameter increasing. In order to reveal the root of this phenomenon, we hydrogenated the doped SiCNWs, found that the surface dangling bonds were saturated, and the discrete impurity levels are degeneracy, which indicates that the discrete impurity band of the doped SiCNWs is derived from the dangling bonds. The surface passivation can degenerate the impurity levels. Therefore, both doping and surface passivation can better improve the photoelectric properties of the SiCNWs. The result can provide additional candidates in producing nano-optoelectronic devices.

  16. Molecular dynamics simulations of the first charge of a Li-ion-Si-anode nanobattery.

    Science.gov (United States)

    Galvez-Aranda, Diego E; Ponce, Victor; Seminario, Jorge M

    2017-04-01

    Rechargeable lithium-ion batteries are the most popular devices for energy storage but still a lot of research needs to be done to improve their cycling and storage capacity. Silicon has been proposed as an anode material because of its large theoretical capacity of ∼3600 mAh/g. Therefore, focus is needed on the lithiation process of silicon anodes where it is known that the anode increases its volume more than 300%, producing cracking and other damages. We performed molecular dynamics atomistic simulations to study the swelling, alloying, and amorphization of a silicon nanocrystal anode in a full nanobattery model during the first charging cycle. A dissolved salt of lithium hexafluorophosphate in ethylene carbonate was chosen as the electrolyte solution and lithium cobalt oxide as cathode. External electric fields are applied to emulate the charging, causing the migration of the Li-ions from the cathode to the anode, by drifting through the electrolyte solution, thus converting pristine Si gradually into Li 14 Si 5 when fully lithiated. When the electric field is applied to the nanobattery, the temperature never exceeds 360 K due to a temperature control imposed resembling a cooling mechanism. The volume of the anode increases with the amorphization of the silicon as the external field is applied by creating a layer of LiSi alloy between the electrolyte and the silicon nanocrystal and then, at the arrival of more Li-ions changing to an alloy, where the drift velocity of Li-ions is greater than the velocity in the initial nanocrystal structure. Charge neutrality is maintained by concerted complementary reduction-oxidation reactions at the anode and cathode, respectively. In addition, the nanobattery model developed here can be used to study charge mobility, current density, conductance and resistivity, among several other properties of several candidate materials for rechargeable batteries and constitutes the initial point for further studies on the formation of

  17. K-shell ionization of high Z elements with low to intermediate velocity Si ions

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Y.P.; Kadhane, U.; Trautmann, D.; Tandon, P.N.; Tribedi, L.C. E-mail: lokesh@tifr.res.in

    2003-12-01

    We report here the measurement of the absolute cross-sections for the K-shell ionization of high atomic number elements (Au and Bi) induced by low to intermediate velocity Si ions. The relativistic wavefunction effects on the ionization cross-sections have been studied by comparing the measured data with different theoretical calculations with and without including the relativistic corrections. The relativistic effect on the K-ionization cross-section is found to depend on the projectile atomic number and velocity.

  18. The synergistic effects of Sr and Si bioactive ions on osteogenesis, osteoclastogenesis and angiogenesis for osteoporotic bone regeneration.

    Science.gov (United States)

    Mao, Lixia; Xia, Lunguo; Chang, Jiang; Liu, Jiaqiang; Jiang, Lingyong; Wu, Chengtie; Fang, Bing

    2017-10-01

    Bioactive ions released from bioceramics play important roles in bone regeneration; however, it is unclear how each ionic composition in complex bioceramics exerts its specific effect on bone regeneration. The aim of this study is to elucidate the functional effects of Sr and Si ions in bioceramics on the regeneration of osteoporotic bone. A model bioceramic with Sr- and Si-containing components (SMS) was successfully fabricated and the effects of ionic products from SMS bioceramics on the osteogenic, osteoclastic and angiogenic differentiation of rBMSCs-OVX and RANKL-induced osteoclasts were investigated. The results showed that SMS bioceramics could enhance ALP activity and expression of Col 1, OCN, Runx2, and angiogenic factors including VEGF and Ang-1. SMS bioceramics not only rebalanced the OPG/RANKL ratio of rBMSCs-OVX at early stage, but also repressed RANKL-induced osteoclast formation and expression of TRAP, DC-STAMP, V-ATPase a3, and NFATc1. The synergistic effects of Sr and Si ions were further investigated as compared with those of similar concentrations of Sr and Si ions alone. Sr and Si ions possessed synergistic effects on osteogenesis, osteoclastogenesis, and angiogenesis, attributed to the dominant effects of Sr ions on enhancing angiogenesis and repressing osteoclastogenesis, and the dominant effects of Si ions on stimulating osteogenesis. The in vivo study using critical-size mandibular defects of OVX rat models showed that SMS bioceramics could significantly enhance bone formation and mineralization compared with β-TCP bioceramics. Our results are the first to elucidate the specific effect of each ion from bioceramics on osteogenesis, osteoclastogenesis and angiogenesis for osteoporotic bone regeneration, paving the way for the design of functional biomaterials with complex compositions for tissue engineering and regenerative medicine. Bioactive ions released from bioceramics play important roles for bone regeneration; however, it is unclear

  19. Electron collisions with atoms, ions, molecules, and surfaces: Fundamental science empowering advances in technology

    Science.gov (United States)

    Bartschat, Klaus; Kushner, Mark J.

    2016-06-01

    Electron collisions with atoms, ions, molecules, and surfaces are critically important to the understanding and modeling of low-temperature plasmas (LTPs), and so in the development of technologies based on LTPs. Recent progress in obtaining experimental benchmark data and the development of highly sophisticated computational methods is highlighted. With the cesium-based diode-pumped alkali laser and remote plasma etching of Si3N4 as examples, we demonstrate how accurate and comprehensive datasets for electron collisions enable complex modeling of plasma-using technologies that empower our high-technology-based society.

  20. Structure Characterization of Modified Polyimide Films Irradiated by 2 MeV Si Ions

    International Nuclear Information System (INIS)

    Tian-Xiang, Chen; Shu-De, Yao; Kun, Wang; Huan, Wang; Zhi-Bo, Ding; Di, Chen

    2009-01-01

    Structures of polyimide (6051) films modified by irradiation of 2.0 MeV Si ions with different fluences are studied in detail. Variations of the functional groups in polyimide are investigated by attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) and Raman spectroscopy. The results indicate that the functional groups can be destroyed gradually with the increasing ion fluence. The variations of structure and element contents are characterized by x-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and x-ray photoelectron spectroscopy (XPS). The results indicate that the contents of N and O decrease significantly compared with the original samples, some graphite-like and carbon-rich phases are formed in the process of irradiation

  1. FTIR and Raman spectra of ion irradiated and annealed 4H-SiC

    International Nuclear Information System (INIS)

    Zhou Lihong; Yang Titao; Yao Cunfeng; Chinese Academy of Sciences, Beijing

    2007-01-01

    The 4H-SiC specimens were implanted with 110keV C-ions and then irradiated with 230MeV Pb-ions and subsequently annealed at different temperatures in vacuum. The samples were investigated after each annealing stage by using FTIR and Raman spectroscopy. The obtained FTIR spectra showed several interference fringes in the range from 960 cm -1 to 1450 cm -1 . The intensity of fringes decreases with the increase of annealing temperature, and an abrupt decrease of the fringe intensity was found for annealing above 900 degree C, indicating that there was a significant recovery of the irradiation-induced damage in the crystal for annealing at high temperatures. The Raman spectroscopy showed that after annealing at 1200 degree C for 30 min the amorphous layer was recovered and the precipitation of carbon atoms in graphite occurred. (authors)

  2. Improved ion acceleration via laser surface plasma waves excitation

    Energy Technology Data Exchange (ETDEWEB)

    Bigongiari, A. [CEA/DSM/LSI, CNRS, Ecole Polytechnique, 91128 Palaiseau Cedex (France); TIPS/LULI, Université Paris 6, CNRS, CEA, Ecole Polytechnique, 3, rue Galilée, 94200 Ivry-sur-Seine (France); Raynaud, M. [CEA/DSM/LSI, CNRS, Ecole Polytechnique, 91128 Palaiseau Cedex (France); Riconda, C. [TIPS/LULI, Université Paris 6, CNRS, CEA, Ecole Polytechnique, 3, rue Galilée, 94200 Ivry-sur-Seine (France); Héron, A. [CPHT, CNRS, Ecole Polytechnique, 91128 Palaiseau Cedex (France)

    2013-05-15

    The possibility of enhancing the emission of the ions accelerated in the interaction of a high intensity ultra-short (<100 fs) laser pulse with a thin target (<10λ{sub 0}), via surface plasma wave excitation is investigated. Two-dimensional particle-in-cell simulations are performed for laser intensities ranging from 10{sup 19} to 10{sup 20} Wcm{sup −2}μm{sup 2}. The surface wave is resonantly excited by the laser via the coupling with a modulation at the target surface. In the cases where the surface wave is excited, we find an enhancement of the maximum ion energy of a factor ∼2 compared to the cases where the target surface is flat.

  3. Optimisation of electronic interface properties of a-Si:H/c-Si hetero-junction solar cells by wet-chemical surface pre-treatment

    International Nuclear Information System (INIS)

    Angermann, H.; Korte, L.; Rappich, J.; Conrad, E.; Sieber, I.; Schmidt, M.; Huebener, K.; Hauschild, J.

    2008-01-01

    The relation between structural imperfections at structured silicon surfaces, energetic distribution of interface state densities, recombination loss at a-Si:H/c-Si interfaces and solar cell characteristics have been intensively investigated using non-destructive, surface sensitive techniques, surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and electron microscopy (SEM). Sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of Si(111) pyramids. Special wet-chemical smoothing and oxide removal procedures for structured substrates were developed, in order to reduce the preparation-induced surface micro-roughness and density of electronically active defects. H-termination and passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological process. We achieved significantly lower micro-roughness, densities of surface states D it (E) and recombination loss at a-Si:H/c-Si interfaces on wafers with randomly distributed pyramids, compared to conventional pre-treatments. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H/c-Si/BSF/Al), the c-Si surface becomes part of the a-Si:H/c-Si interface, whose recombination activity determines cell performance. With textured substrates, the smoothening procedure results in a significant increase of short circuit current, fill factor and efficiency

  4. Ionization by ion impact at grazing incidence on insulator surface

    CERN Document Server

    Martiarena, M L

    2003-01-01

    We have calculated the energy distribution of electrons produced by ionization of the ionic crystal electrons in grazing fast ion-insulator surface collision. The ionized electrons originate in the 2p F sup - orbital. We observe that the binary peak appears as a double change in the slope of the spectra, in the high energy region. The form of the peak is determined by the initial electron distribution and its position will be affected by the binding energy of the 2p F sup - electron in the crystal. This BEP in insulator surfaces will appear slightly shifted to the low energy side with respect the ion-atom one.

  5. Electron emission during multicharged ion-metal surface interactions

    International Nuclear Information System (INIS)

    Zeijlmans van Emmichoven, P.A.; Havener, C.C.; Hughes, I.G.; Overbury, S.H.; Robinson, M.T.; Zehner, D.M.; Meyer, F.W.

    1992-01-01

    The electron emission during multicharged ion-metal surface interactions will be discussed. The interactions lead to the emission of a significant number of electrons. Most of these electrons have energies below 30 eV. For incident ions with innershell vacancies the emission of Auger electrons that fill these vacancies has been found to occur mainly below the surface. We will present recently measured electron energy distributions which will be used to discuss the mechanisms that lead to the emission of Auger and of low-energy electrons

  6. 4H-SiC surface energy tuning by nitrogen up-take

    Energy Technology Data Exchange (ETDEWEB)

    Pitthan, E., E-mail: eduardo.pitthan@ufrgs.br [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); PGMICRO, UFRGS, 91509-900, Porto Alegre, RS (Brazil); Amarasinghe, V.P. [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); Xu, C.; Gustafsson, T. [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854 (United States); Stedile, F.C. [PGMICRO, UFRGS, 91509-900, Porto Alegre, RS (Brazil); Instituto de Química, UFRGS, 91509-900, Porto Alegre, RS (Brazil); Feldman, L.C. [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854 (United States)

    2017-04-30

    Highlights: • Wettability modification of 4H-SiC as a function of nitrogen adsorption is reported. • SiC surface energy was significantly reduced as nitrogen was incorporated. • Modifications obtained were proved to be inert to etching and stable against time. • Variable control of SiC surface provides new opportunities for biomedical applications. - Abstract: Surface energy modification and surface wettability of 4H silicon carbide (0001) as a function of nitrogen adsorption is reported. The surface wettability is shown to go from primarily hydrophilic to hydrophobic and the surface energy was significantly reduced with increasing nitrogen incorporation. These changes are investigated by x-ray photoelectron spectroscopy and contact angle measurements. The surface energy was quantitatively determined by the Fowkes model and interpreted primarily in terms of the variation of the surface chemistry with nitrogen coverage. Variable control of SiC surface energies with a simple and controllable atomic additive such as nitrogen that is inert to etching, stable against time, and also effective in electrical passivation, can provide new opportunities for SiC biomedical applications, where surface wetting plays an important role in the interaction with the biological interfaces.

  7. Negative ion adsorption by the ion source surface as a factor influencing ion lifetime measurements

    Science.gov (United States)

    Lukin, V. G.; Khvostenko, O. G.

    2017-12-01

    It is well known that negative ions formed in the gas phase through low-energy electron capture by molecules show a scatter in the measured lifetimes of their autodetachment states. In considering this question, it was found that, when using a static sector magnetic mass spectrometer, some of the ions formed on the ionization chamber walls are adsorbed and stabilized there, then joining the registered ion flux and thereby distorting their measured lifetime. Because the number of the adsorbed ions depends on the experimental conditions, their contribution to the total flux is to some extent uncontrollable—hence, the scatter.

  8. Effect of surface morphology on the sputtering yields. I. Ion sputtering from self-affine surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Makeev, Maxim A. E-mail: makeev@usc.edu; Barabasi, Albert-Laszlo E-mail: alb@nd.edu

    2004-08-01

    As extensive experimental studies have shown, under certain conditions, ion bombardment of solid targets induces a random (self-affine) morphology on the ion-eroded surfaces. The rough morphology development is known to cause substantial variations in the sputtering yields. In this article, we present a theoretical model describing the sputter yields from random, self-affine surfaces subject to energetic ion bombardment. We employ the Sigmund's theory of ion sputtering, modified for the case of self-affine surfaces, to compute the sputter yields. We find that the changes in the sputtering yield, associated with the non-planar surface morphology, are strongly dependent on the parameters characterizing the surface roughness (such as the saturation width and the correlation length) and the incident ion beam (such as the incident ion energy and the deposited energy widths). It is shown that, for certain ranges of the parameters variations, surface roughness leads to substantial enhancements in the yield, with magnitude of the effect being more than 100%, as compared to the flat surface value. Furthermore, we find that, depending on the interplay between these parameters, the surface roughness can both enhance and suppress the sputter yields.

  9. Formation of negative ions on a metal surface

    International Nuclear Information System (INIS)

    Amersfoort, P.W. van.

    1987-01-01

    In this thesis a fundamental study of the charge exchange process of positive ions on the converter surface is presented. Beams of hydrogen ad cesium ions are scattered from a thoroughly cleaned W(110) surface, under ultra-high vacuum conditions. The cesium coverage of the surface is a controlled parameter. Ch. 2 deals with the negative-ion formation probability for hydrogen atoms. The influence of coabsorption of hydrogen is studied in Ch. 3. These measurements are important for understanding the formation process in plasma sources, because the converter surface is expected to be strongly contaminated with hydrogen. The charge state of scattered cesium particles is investigated in Ch. 4. Knowledge of this parameter is essential for Ch. 5, in which a model study of adsorption of cesium on a metal surface in contact with a plasma is presented. Finally, the negative-ion formation process in a plasma environment is studied in Ch. 6. Measurements done on a hollow-cathode discharge equipped with a novel type of converter, a porous tungsten button, are discussed. Liquid cesium diffuses through this button towards the side in contact with the plasma. (Auth.)

  10. Reducing Motional Decoherence in Ion Traps with Surface Science Methods

    Science.gov (United States)

    Haeffner, Hartmut

    2014-03-01

    Many trapped ions experiments ask for low motional heating rates while trapping the ions close to trapping electrodes. However, in practice small ion-electrode distances lead to unexpected high heating rates. While the mechanisms for the heating is still unclear, it is now evident that surface contamination of the metallic electrodes is at least partially responsible for the elevated heating rates. I will discuss heating rate measurements in a microfabricated surface trap complemented with basic surface science studies. We monitor the elemental surface composition of the Cu-Al alloy trap with an Auger spectrometer. After bake-out, we find a strong Carbon and Oxygen contamination and heating rates of 200 quanta/s at 1 MHz trap frequency. After removing most of the Carbon and Oxygen with Ar-Ion sputtering, the heating rates drop to 4 quanta/s. Interestingly, we still measure the decreased heating rate even after the surface oxidized from the background gas throughout a 40-day waiting time in UHV.

  11. Surface morphology and dislocation characteristics near the surface of 4H-SiC wafer using multi-directional scanning transmission electron microscopy.

    Science.gov (United States)

    Sato, Takahiro; Orai, Yoshihisa; Suzuki, Yuya; Ito, Hiroyuki; Isshiki, Toshiyuki; Fukui, Munetoshi; Nakamura, Kuniyasu; Schamp, C T

    2017-10-01

    To improve the reliability of silicon carbide (SiC) electronic power devices, the characteristics of various kinds of crystal defects should be precisely understood. Of particular importance is understanding the correlation between the surface morphology and the near surface dislocations. In order to analyze the dislocations near the surface of 4H-SiC wafers, a dislocation analysis protocol has been developed. This protocol consists of the following process: (1) inspection of surface defects using low energy scanning electron microscopy (LESEM), (2) identification of small and shallow etch pits using KOH low temperature etching, (3) classification of etch pits using LESEM, (4) specimen preparation of several hundred nanometer thick sample using the in-situ focused ion beam micro-sampling® technique, (5) crystallographic analysis using the selected diffraction mode of the scanning transmission electron microscope (STEM), and (6) determination of the Burgers vector using multi-directional STEM (MD-STEM). The results show a correlation between the triangular terrace shaped surface defects and an hexagonal etch pit arising from threading dislocations, linear shaped surface defects and elliptical shaped etch pits arising from basal plane dislocations. Through the observation of the sample from two orthogonal directions via the MD-STEM technique, a basal plane dislocation is found to dissociate into an extended dislocation bound by two partial dislocations. A protocol developed and presented in this paper enables one to correlate near surface defects of a 4H-SiC wafer with the root cause dislocations giving rise to those surface defects. © The Author 2017. Published by Oxford University Press on behalf of The Japanese Society of Microscopy. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

  12. Ion induced intermixing and consequent effects on the leakage currents in HfO{sub 2}/SiO{sub 2}/Si systems

    Energy Technology Data Exchange (ETDEWEB)

    Manikanthababu, N.; Saikiran, V.; Pathak, A.P.; Rao, S.V.S.N. [University of Hyderabad, School of Physics, Hyderabad (India); Chan, T.K.; Vajandar, S.; Osipowicz, T. [National University of Singapore, Department of Physics, Centre for Ion Beam Applications (CIBA), Singapore (Singapore)

    2017-05-15

    Atomic layer deposited (ALD) samples with layer stacks of HfO{sub 2} (3 nm)/SiO{sub 2} (0.7 nm)/Si were subjected to 120 MeV Au ion irradiation at different fluences to study intermixing effects across the HfO{sub 2}/SiO{sub 2} interface. High-resolution Rutherford backscattering spectrometry (HRBS) and X-ray reflectivity (XRR) measurements confirm an increase in the interlayer thickness as a result of SHI induced intermixing effects. Current-voltage (I-V) measurements reveal an order of magnitude difference in the leakage current density between the pristine and irradiated samples. This can be explained by considering the increased physical thickness of interlayer (HfSiO). Furthermore, the samples were subjected to rapid thermal annealing (RTA) process to analyze annealing kinetics. (orig.)

  13. Pd adsorption on Si(1 1 3) surface: STM and XPS study

    International Nuclear Information System (INIS)

    Hara, Shinsuke; Yoshimura, Masamichi; Ueda, Kazuyuki

    2008-01-01

    Pd-induced surface structures on Si(1 1 3) have been studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). In the initial process of the Pd adsorption below 0.10 ML, Pd silicide (Pd 2 Si) clusters are observed to form randomly on the surface. By increasing the Pd coverage to 0.10 ML, the clusters cover the entire surface, and an amorphous layer is formed. After annealing the Si(1 1 3)-Pd surface at 600 deg. C, various types of islands and chain protrusions appears. The agglomeration, coalescence and crystallization of these islands are observed by using high temperature (HT-) STM. It is also found by XPS that the islands correspond to Pd 2 Si structure. On the basis of these results, evolution of Pd-induced structures at high temperatures is in detail discussed

  14. Facile synthesis and lithium storage properties of a porous NiSi2/Si/carbon composite anode material for lithium-ion batteries.

    Science.gov (United States)

    Jia, Haiping; Stock, Christoph; Kloepsch, Richard; He, Xin; Badillo, Juan Pablo; Fromm, Olga; Vortmann, Britta; Winter, Martin; Placke, Tobias

    2015-01-28

    In this work, a novel, porous structured NiSi2/Si composite material with a core-shell morphology was successfully prepared using a facile ball-milling method. Furthermore, the chemical vapor deposition (CVD) method is deployed to coat the NiSi2/Si phase with a thin carbon layer to further enhance the surface electronic conductivity and to mechanically stabilize the whole composite structure. The morphology and porosity of the composite material was evaluated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and nitrogen adsorption measurements (BJH analysis). The as-prepared composite material consists of NiSi2, silicon, and carbon phases, in which the NiSi2 phase is embedded in a silicon matrix having homogeneously distributed pores, while the surface of this composite is coated with a carbon layer. The electrochemical characterization shows that the porous and core-shell structure of the composite anode material can effectively absorb and buffer the immense volume changes of silicon during the lithiation/delithiation process. The obtained NiSi2/Si/carbon composite anode material displays an outstanding electrochemical performance, which gives a stable capacity of 1272 mAh g(-1) for 200 cycles at a charge/discharge rate of 1C and a good rate capability with a reversible capacity of 740 mAh g(-1) at a rate of 5C.

  15. Surface tension alteration on calcite, induced by ion substitution

    DEFF Research Database (Denmark)

    Sakuma, Hiroshi; Andersson, Martin Peter; Bechgaard, Klaus

    2014-01-01

    The interaction of water and organic molecules with mineral surfaces controls many processes in nature and industry. The thermodynamic property, surface tension, is usually determined from the contact angle between phases, but how does one understand the concept of surface tension at the nanoscale...... preferentially as ion pairs at solution-calcite interfaces. Mg2+ incorporation weakens organic molecule adhesion while strengthening water adsorption so Mg2+ substitution renders calcite more water wet. When Mg2+ replaces 10% of surface Ca2+, the contact angle changes dramatically, by 40 to 70, converting...

  16. Surface charge compensation for a highly charged ion emission microscope

    International Nuclear Information System (INIS)

    McDonald, J.W.; Hamza, A.V.; Newman, M.W.; Holder, J.P.; Schneider, D.H.G.; Schenkel, T.

    2003-01-01

    A surface charge compensation electron flood gun has been added to the Lawrence Livermore National Laboratory (LLNL) highly charged ion (HCI) emission microscope. HCI surface interaction results in a significant charge residue being left on the surface of insulators and semiconductors. This residual charge causes undesirable aberrations in the microscope images and a reduction of the Time-Of-Flight (TOF) mass resolution when studying the surfaces of insulators and semiconductors. The benefits and problems associated with HCI microscopy and recent results of the electron flood gun enhanced HCI microscope are discussed

  17. Desorption dynamics of deuterium molecules from the Si(100)-(3x1) dideuteride surface.

    Science.gov (United States)

    Niida, T; Tsurumaki, H; Namiki, A

    2006-01-14

    We measured polar angle (theta)-resolved time-of-flight spectra of D2 molecules desorbing from the Si(100)-(3x1) dideuteride surface. The desorbing D2 molecules exhibit a considerable translational heating with mean desorption kinetic energies of approximately 0.25 eV, which is mostly independent of the desorption angles for 0 degreesdynamics of deuterium was discussed along the principle of detailed balance to predict their adsorption dynamics onto the monohydride Si surface.

  18. Activation characteristics of ion-implanted Si+ in AlGaN

    International Nuclear Information System (INIS)

    Irokawa, Y.; Fujishima, O.; Kachi, T.; Pearton, S.J.; Ren, F.

    2005-01-01

    Multiple-energy Si + implantation in the range 30-360 keV into Al 0.13 Ga 0.87 N for n-type doping was carried out at room temperature, followed by annealing at 1150-1375 deg. C for 5 min. Activation efficiencies close to 100% were obtained for ion doses of 1.0x10 15 cm -2 after annealing at 1375 deg. C, with a resulting sheet resistance of 74 Ω/square. By sharp contrast, the activation efficiency at 1150 deg. C was only 4% for this dose, with a sheet resistance of 1.63x10 4 Ω/square. The activation efficiency was also a function of dose, with a maximum activation percentage of only 55% for lower doses of 1.0x10 14 cm -2 annealed at 1375 deg. C. This is due to the comparatively larger effect of compensating acceptors at the lower dose and is also lower than the corresponding activation of Si in pure GaN under these conditions (78%). The measurement temperature dependence of sheet carrier density showed an activation energy of 23 meV, consistent with the ionization energy of Si in AlGaN

  19. Industrial applications of ion implantation into metal surfaces

    International Nuclear Information System (INIS)

    Williams, J.M.

    1987-07-01

    The modern materials processing technique, ion implantation, has intriguing and attractive features that stimulate the imaginations of scientists and technologists. Success of the technique for introducing dopants into semiconductors has resulted in a stable and growing infrastructure of capital equipment and skills for use of the technique in the economy. Attention has turned to possible use of ion implantation for modification of nearly all surface related properties of materials - optical, chemical and corrosive, tribological, and several others. This presentation provides an introduction to fundamental aspects of equipment, technique, and materials science of ion implantation. Practical and economic factors pertaining to the technology are discussed. Applications and potential applications are surveyed. There are already available a number of ion-implanted products, including ball-and-roller bearings and races, punches-and-dies, injection screws for plastics molding, etc., of potential interest to the machine tool industry

  20. Surface modification of commercial tin coatings by carbon ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, L.J.; Sood, D.K.; Manory, R.R. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1993-12-31

    Commercial TiN coatings of about 2 {mu}m thickness on high speed steel substrates were implanted at room temperature with 95 keV carbon ions at nominal doses between 1 x 10{sup 17} - 8x10{sup 17} ions cm{sup -2}. Carbon ion implantation induced a significant improvement in ultramicrohardness, friction coefficient and wear properties. The surface microhardness increases monotonically by up to 115% until a critical dose is reached. Beyond this dose the hardness decreases, but remains higher than that of unimplanted sample. A lower friction coefficient and a longer transition period towards a steady state condition were obtained by carbon ion implantation. The changes in tribomechanical properties are discussed in terms of radiation damage and possible formation of a second phase rich in carbon. 6 refs., 3 figs.

  1. Bioinspired periodic pinecone-shaped Si subwavelength nanostructures for broadband and omnidirectional antireflective surface.

    Science.gov (United States)

    Leem, Jung Woo; Yu, Jae Su

    2012-10-01

    We reported the bioinspired periodic pinecone-shaped silicon (Si) subwavelength nanostructures, which were fabricated by laser interference lithography and inductively coupled plasma etching using thermally dewetted gold (Au) nanoparticles in SiCl4 plasma, on Si substrates for broadband and wide-angle antireflective surface. For the fabricated pinecone-like Si subwavelength nanostructures, antireflection characteristics and wetting behaviors were investigated. The pinecone-shaped Si subwavelength nanostructure with a period of 320 nm for 7 nm of Au film exhibited a relatively low solar weighted reflectance value of 3.5% over a wide wavelength range of 300-1030 nm, maintaining the reflectance values of < 9.9% at a wavelength of 550 nm up to a high incident angle of theta(i) = 70 degrees for non-polarized light. This structure also showed a hydrophobic surface with a water contact angle of theta(c) approximately 102 degrees.

  2. Evolution of kinetically controlled In-induced surface structure on Si(5 5 7) surface

    Science.gov (United States)

    Chauhan, Amit Kumar Singh; Eldose, Nirosh M.; Mishra, Monu; Niazi, Asad; Nair, Lekha; Gupta, Govind

    2014-09-01

    This paper introduces issue of kinetically controlled and temperature driven superstructural phase transition of Indium (In) on atomically clean high index Si(5 5 7)-7 × 1 surface. Auger electron spectroscopy analysis reveals that at room-temperature (RT) with a controlled incident flux of 0.002 ML/s; In overlayers evolve through the Frank-van der Merwe growth mode and yield a (1 × 1) diffraction pattern for coverage ≥1 ML. For substrate temperature 500 °C island growth is observed. On annealing the In/Si(5 5 7) interface in the temperature range 250-340 °C, clusters to two dimensional (2D) layer transformation on top of a stable monolayer is predominated. In-situ RT and HT adsorption and thermal desorption phenomena revealed the formation of coverage and temperature dependent thermally stable In induced superstructural phases such as (4 × 1) at 0.5 ML (520 °C), (√3 × √3-R30°) at 0.3 ML (560 °C) and (7 × 7) at 0.1 ML (580 °C). These indium induced superstructures could be utilized as potential substrate for the growth of various exotic 1D/2D structures.

  3. Effect of surface morphology on the sputtering yields. II. Ion sputtering from rippled surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Makeev, Maxim A. E-mail: makeev@usc.edu; Barabasi, Albert-Laszlo E-mail: alb@nd.edu

    2004-08-01

    Off-normal ion bombardment of solid targets with energetic particles often leads to development of periodically modulated structures on the surfaces of eroded materials. Ion-induced surface roughening, in its turn, causes sputtering yield changes. We report on a comprehensive theoretical study of the effect of rippled surface morphology on the sputtering yields. The yield is computed as a function of the parameters characterizing the surface morphology and the incident ion beam, using the Sigmund's theory of ion sputtering. We find that the surface morphology development may cause substantial variations in the sputter yields, depending on a complex interplay between the parameters characterizing the ripple structure and the incident ion beam. For certain realizations of the ripple structure, the surface morphology is found to induce enhanced, relative to the flat surface value, sputtering yields. On the other hand, there exist regimes in which the sputtering yield is suppressed by the surface roughness below the flat surface result. We confront the obtained theoretical results with available experimental data and find that our model provides an excellent qualitative and, in some cases, quantitative agreement with the results of experimental studies.

  4. Surface modification technique of structural ceramics: ion implantation-assisted multi-arc ion plating

    International Nuclear Information System (INIS)

    Peng Zhijian; Miao Hezhuo; Si Wenjie; Qi Longhao; Li Wenzhi

    2003-01-01

    Through reviewing the advantages and disadvantages of the existed surface modification techniques, a new technique, ion implantation-assisted multi-arc ion plating, was proposed. Using the proposed technique, the surfaces of silicon nitride ceramics were modified by Ti ion implantation, and then three kinds of ternary coatings, (Ti,Al)N, (Ti,Zr)N and (Ti,Cr)N, were deposited on the as-implanted ceramics. The coatings prepared by this technique are of high-hardness and well adhesive to the ceramic substrates. The maximal hardness measured by nanoindentation tests is more than 40 GPa. The maximal critical load by nanoscratch tests is more than 60 mN. The cutting tools prepared by this technique with the presented coatings are of excellent performance in industrial applications. The technique may be promising for the surface modification of structural ceramics. (orig.)

  5. Ion beam modification of surfaces for biomedical applications

    International Nuclear Information System (INIS)

    Sommerfeld, Jana

    2014-01-01

    Human life expectancy increased significantly within the last century. Hence, medical care must ever be improved. Optimizing artificial replacements such as hip joints or stents etc. is of special interest. For this purpose, new materials are constantly developed or known ones modified. This work focused on the possibility to change the chemistry and topography of biomedically relevant materials such as diamond-like carbon (DLC) and titanium dioxide (TiO 2 ) by means of ion beam irradiation. Mass-separated ion beam deposition was used in order to synthesize DLC layers with a high sp 3 content (> 70%), a sufficiently smooth surface (RMS<1 nm) and a manageable film thickness (50 nm). The chemistry of the DLC layers was changed by ion beam doping with different ion species (Ag,Ti) and concentrations. Additionally, the surface topography of silicon and titanium dioxide was altered by ion beam irradiation under non-perpendicular angle of incidence. The created periodic wave structures (so-called ripples) were characterized and their dependency on the ion energy was investigated. Moreover, ripples on silicon were covered with a thin DLC layer in order to create DLC ripples. The biocompatibility of all samples was investigated by adsorption experiments. For this purpose, human plasma fibrinogen (HPF) was used due to its ambiphilic character, which allows the protein to assume different conformations on materials with different hydrophilicities. Moreover, HPF is a crucial factor in the blood coagulation process. This work comes to the conclusion that the interaction of both, the surface chemistry and topography, has a strong influence on the adsorption behavior of HPF and thus the biocompatibility of a material. Both factors can be specifically tuned by means of ion beam irradiation.

  6. Ion Production by Laser Impact on a Silver Surface

    DEFF Research Database (Denmark)

    Christensen, Bo Toftmann; Schou, Jørgen

    Even at moderate fluence (0.6 -2.4 J/cm2) laser impact on metals in the UV regime results in a significant number of ions emitted from the surface. Even at this low fluence the particles ejected from a surface interact with each other in a so-called laser ablation plume. The ablated particles...... are largely neutrals at low fluence, but the fraction of ions increases strongly with fluence. We have irradiated silver in a vacuum chamber (~ 10-7 mbar) with a Nd:YAG laser at a wavelength of 355 nm. The ion flow in different directions has been measured with a hemispherical array of Langmuir probes...... range considered is also a typical range for pulsed laser deposition (PLD), by which the material is collected on a suitable substrate for thin film growth. PLD has the advantage compared with other film deposition methods, that even a complicated stoichiometry, e.g. metal oxides or alloys, can...

  7. Reflection properties of hydrogen ions at helium irradiated tungsten surfaces

    International Nuclear Information System (INIS)

    Doi, K; Tawada, Y; Kato, S; Sasao, M; Kenmotsu, T; Wada, M; Lee, H T; Ueda, Y; Tanaka, N; Kisaki, M; Nishiura, M; Matsumoto, Y; Yamaoka, H

    2016-01-01

    Nanostructured W surfaces prepared by He bombardment exhibit characteristic angular distributions of hydrogen ion reflection upon injection of 1 keV H + beam. A magnetic momentum analyzer that can move in the vacuum chamber has measured the angular dependence of the intensity and the energy of reflected ions. Broader angular distributions were observed for He-irradiated tungsten samples compared with that of the intrinsic polycrystalline W. Both intensity and energy of reflected ions decreased in the following order: the polycrystalline W, the He-bubble containing W, and the fuzz W. Classical trajectory Monte Carlo simulations based on Atomic Collision in Amorphous Target code suggests that lower atom density near the surface can make the reflection coefficients lower due to increasing number of collisions. (paper)

  8. Natural variability in the surface ocean carbonate ion concentration

    OpenAIRE

    N. S. Lovenduski; M. C. Long; K. Lindsay

    2015-01-01

    We investigate variability in the surface ocean carbonate ion concentration ([CO32−]) on the basis of a long control simulation with a fully-coupled Earth System Model. The simulation is run with a prescribed, pre-industrial atmospheric CO2 concentration for 1000 years, permitting investigation of natural [CO32−] variability on interannual to multi-decadal timescales. We find high interannual variability in surface [CO32−] in the tropical...

  9. Natural variability in the surface ocean carbonate ion concentration

    OpenAIRE

    Lovenduski, N. S.; Long, M. C.; Lindsay, K.

    2015-01-01

    We investigate variability in the surface ocean carbonate ion concentration ([CO32−]) on the basis of a~long control simulation with an Earth System Model. The simulation is run with a prescribed, pre-industrial atmospheric CO2 concentration for 1000 years, permitting investigation of natural [CO32−] variability on interannual to multi-decadal timescales. We find high interannual variability in surface [CO32−] in the tropical Pacific and ...

  10. The impact of the competitive adsorption of ions at surface sites on surface free energies and surface forces

    Science.gov (United States)

    Parsons, Drew F.; Salis, Andrea

    2015-04-01

    The relationship between surface charge and surface potential at the solid-liquid interface is often determined by a charge regulation process, the chemisorption of a potential determining ion such as H+. A subtle ion-specific effect can be observed when other ions compete with the primary potential determining ion to bind to a surface site. Site competition may involve alternative ions competing for a first binding site, e.g., metals ions competing with H+ to bind to a negatively charged oxide or carboxyl site. Second-binding sites with site competition may also be found, including amphoteric OH2+ sites, or anion binding to amine groups. In this work, a general theoretical model is developed to describe the competitive adsorption of ions at surface sites. Applied to the calculation of forces, the theory predicts a 20% increase in repulsion between titania surfaces in 1 mM NaCl, and a 25% reduction in repulsion between silica surfaces in 0.1M NaCl compared to calculations neglecting ion site competition.

  11. Localized Surface Plasmon on 6H SiC with Ag Nanoparticles

    DEFF Research Database (Denmark)

    Wei, Yi; Fadil, Ahmed; Ou, Haiyan

    2017-01-01

    Silver (Ag) nanoparticles (NPs) were deposited on the surface of bulk Nitrogen-Boron co-doped 6H silicon carbide (SiC), and the Ag NPs were observed to induce localized surface plasmons (LSP) resonances on the SiC substrate, which was expected to improve the internal quantum efficiency (IQE...... of an Ag nanoparticle on the SiC substrate, it is predicted that when the diameter of the cross section on the xy plane of the Ag nanoparticle is greater than 225 nm, the LSP starts to enhance the PL intensity. With implementation of a 3rd order exponential decay fitting model to the TRPL results...

  12. Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

    Energy Technology Data Exchange (ETDEWEB)

    Pastuović, Željko, E-mail: zkp@ansto.gov.au [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, NSW 2232 (Australia); Capan, Ivana [Material Physics Division, Institute Rudjer Boskovic, PO Box 180, 10000 Zagreb (Croatia); Cohen, David D. [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, NSW 2232 (Australia); Forneris, Jacopo [Physics Department and NIS Excellence Centre, University of Torino, via P. Giuria 1, 10125 Torino (Italy); Iwamoto, Naoya; Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Siegele, Rainer [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, NSW 2232 (Australia); Hoshino, Norihiro; Tsuchida, Hidekazu [Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196 (Japan)

    2015-04-01

    We studied the radiation hardness of 4H-SiC Schottky barrier diodes (SBD) for the light ion detection and spectroscopy in harsh radiation environments. n-Type SBD prepared on nitrogen-doped (∼4 × 10{sup 14} cm{sup −3}) epitaxial grown 4H-SiC thin wafers have been irradiated by a raster scanning alpha particle microbeam (2 and 4 MeV He{sup 2+} ions separately) in order to create patterned damage structures at different depths within a sensitive volume of tested diodes. Deep Level Transient Spectroscopy (DLTS) analysis revealed the formation of two deep electron traps in the irradiated and not thermally treated 4H-SiC within the ion implantation range (E1 and E2). The E2 state resembles the well-known Z{sub 1/2} center, while the E1 state could not be assigned to any particular defect reported in the literature. Ion Beam Induced Charge (IBIC) microscopy with multiple He ion probe microbeams (1–6 MeV) having different penetration depths in tested partly damaged 4H-SiC SBD has been used to determine the degradation of the charge collection efficiency (CCE) over a wide fluence range of damaging alpha particle. A non-linear behavior of the CCE decrease and a significant degradation of the spectroscopic performance with increasing He ion fluence were observed above the value of 10{sup 11} cm{sup −2}.

  13. Mechanism of negative ion emission from surfaces of ferroelectrics

    Czech Academy of Sciences Publication Activity Database

    Šroubek, Zdeněk

    2012-01-01

    Roč. 606, 15-16 (2012), s. 1327-1330 ISSN 0039-6028 Institutional support: RVO:67985882 Keywords : Surface of ferroelectrics * Ion emission Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.838, year: 2012 http://www.sciencedirect.com/science/article/pii/S0039602812001525#gts0005

  14. EVOLUTION OF IONS AFTER MULTIPLE ELECTRON-CAPTURE FROM SURFACES

    NARCIS (Netherlands)

    MORGENSTERN, R; DAS, J

    1993-01-01

    A comparison is made of the electronic processes which occur when a multiply charged ion is approaching an atomic target on the one hand or a metal surface on the other hand. In both caws three collision phases can be identified: those of attraction, of electron capture and of decay in the vacuum;

  15. major ions composition of the groundwater and surface water ...

    African Journals Online (AJOL)

    ADMIN

    ABSTRACT: Broad hydrochemical survey has been carried out to study the spatial variation of the major ions composition of the surface and groundwater systems in the Ethiopian volcanic terrain and associated Plio-Quaternary sediments. The result revealed wide hydrochemical variations controlled by geological ...

  16. Production of composite Si nanoparticles by plasma spraying PVD and CH4 annealing for negative electrodes of lithium ion batteries

    Science.gov (United States)

    Ohta, Ryoshi; Ohta, Yutaro; Tashiro, Toru; Kambara, Makoto

    2015-09-01

    Si is a promising candidate as anode of next generation high density Li ion batteries. This material, however, needs to be nanostructured, nanoparticles and C coating of active material, to cope with huge volume change and associated rapid capacity decay. Si nanoparticles with 20-40 nm have been successfully produced by plasma spraying PVD and also Si-C core-shell composite particles by adding CH4 during processing. The battery performance has been improved with these nanopowders as anode, especially with the C coated Si particles. However, SiC that is inactive in battery reaction forms inevitably at high temperature during plasma spraying PVD and reduces the capacity density. In this work, therefore, post CH4 annealing was attempted to form Si-C nanocomposite particles while suppressing formation of SiC. The primary Si nanoparticles were unchanged in size after annealing and were coated with the finer carbonous particles that formed after CH4 infiltration through pores between nanoparticles. The batteries using annealed powders with C/Si molar ratio of 0.3 have shown two-fold capacity retention increase after 50 cycles with no capacity reduction associated with SiC formation as compared to the powders without C. This work was partly supported by the Funding Program for Next Generation World-Leading Researchers (NEXT Program) of Japan.

  17. Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure

    Energy Technology Data Exchange (ETDEWEB)

    Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); Billen, Arne [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Moussa, Alain; Caymax, Matty; Bender, Hugo [Imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); Heyns, Marc [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); Delabie, Annelies [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium)

    2016-10-30

    Highlights: • O{sub 3} or O{sub 2} exposures on H-Si(100) result in O ALs with different surface structures. • Si-EPI on O AL using O{sub 3} process is by direct epitaxial growth mechanism. • Si-EPI on O AL using O{sub 2} process is by epitaxial lateral overgrowth mechanism. • Distortions by O AL, SiH{sub 4} flux rate and Si thickness has an impact on Si-EPI quality. - Abstract: The epitaxial growth of Si layers on Si substrates in the presence of O atoms is generally considered a challenge, as O atoms degrade the epitaxial quality by generating defects. Here, we investigate the growth mechanisms for Si epitaxy on O atomic layers (ALs) with different O-contents and structures. O ALs are deposited by ozone (O{sub 3}) or oxygen (O{sub 2}) exposure on H-terminated Si at 50 °C and 300 °C respectively. Epitaxial Si is deposited by chemical vapor deposition using silane (SiH{sub 4}) at 500 °C. After O{sub 3} exposure, the O atoms are uniformly distributed in Si-Si dimer/back bonds. This O layer still allows epitaxial seeding of Si. The epitaxial quality is enhanced by lowering the surface distortions due to O atoms and by decreasing the arrival rate of SiH{sub 4} reactants, allowing more time for surface diffusion. After O{sub 2} exposure, the O atoms are present in the form of SiO{sub x} clusters. Regions of hydrogen-terminated Si remain present between the SiO{sub x} clusters. The epitaxial seeding of Si in these structures is realized on H-Si regions, and an epitaxial layer grows by a lateral overgrowth mechanism. A breakdown in the epitaxial ordering occurs at a critical Si thickness, presumably by accumulation of surface roughness.

  18. Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

    International Nuclear Information System (INIS)

    Focsa, A.; Slaoui, A.; Charifi, H.; Stoquert, J.P.; Roques, S.

    2009-01-01

    Surface passivation of bare silicon or emitter region is of great importance towards high efficiency solar cells. Nowadays, this is usually accomplished by depositing an hydrogenated amorphous silicon nitride (a-SiNx:H) layer on n + p structures that serves also as an excellent antireflection layer. On the other hand, surface passivation of p-type silicon is better assured by an hydrogenated amorphous silicon (a-Si:H) layer but suffers from optical properties. In this paper, we reported the surface passivation of p-type and n-type silicon wafers by using an a-Si:H/SiNx:H double layer formed at low temperature (50-400 deg. C) with ECR-PECVD technique. We first investigated the optical properties (refraction index, reflectance, and absorbance) and structural properties by FTIR (bonds Si-H, N-H) of the deposited films. The hydrogen content in the layers was determined by elastic recoil detection analysis (ERDA). The passivation effect was monitored by measuring the minority carrier effective lifetime vs. different parameters such as deposition temperature and amorphous silicon layer thickness. We have found that a 10-15 nm a-Si film with an 86 nm thick SiN layer provides an optimum of the minority carriers' lifetime. It increases from an initial value of about 50-70 μs for a-Si:H to about 760 and 800 μs for a-Si:H/SiNx:H on Cz-pSi and FZ-nSi, respectively, at an injection level 2 x 10 15 cm -3 . The effective surface recombination velocity, S eff , for passivated double layer on n-type FZ Si reached 11 cm/s and for FZ-pSi-14 cm/s, and for Cz-pSi-16-20 cm/s. Effect of hydrogen in the passivation process is discussed.

  19. Surface reconstruction switching induced by tensile stress of DB steps: From Ba/Si(0 0 1)- 2 × 3 to Ba/Si(0 0 1)-4° off- 3 × 2

    Science.gov (United States)

    Kim, Hidong; Lkhagvasuren, Altaibaatar; Zhang, Rui; Seo, Jae M.

    2018-05-01

    The alkaline-earth metal adsorption on Si(0 0 1) has attracted much interest for finding a proper template in the growth of high- κ and crystalline films. Up to now on the flat Si(0 0 1) surface with double domains and single-layer steps, the adsorbed Ba atoms are known to induce the 2 × 3 structure through removing two Si dimers and adding a Ba atom per unit cell in each domain. In the present investigation, the Si(0 0 1)-4° off surface with DB steps and single domains has been employed as a substrate and the reconstruction at the initial stage of Ba adsorption has been investigated by scanning tunneling microscopy and synchrotron photoemission spectroscopy. On this vicinal and single domain terrace, a novel 3 × 2 structure rotated by 90° from the 2 × 3 structure has been found. Such a 3 × 2 structure turns out to be formed by adding a Ba atom and a Si dimer per unit cell. This results from the fact that the adsorbed Ba2+ ions with a larger ionic radius relieve tensile stress on the original Si dimers exerted by the rebonded atoms at the DB step.

  20. Embedded Si/Graphene Composite Fabricated by Magnesium-Thermal Reduction as Anode Material for Lithium-Ion Batteries

    Science.gov (United States)

    Zhu, Jiangliu; Ren, Yurong; Yang, Bo; Chen, Wenkai; Ding, Jianning

    2017-12-01

    Embedded Si/graphene composite was fabricated by a novel method, which was in situ generated SiO2 particles on graphene sheets followed by magnesium-thermal reduction. The tetraethyl orthosilicate (TEOS) and flake graphite was used as original materials. On the one hand, the unique structure of as-obtained composite accommodated the large volume change to some extent. Simultaneously, it enhanced electronic conductivity during Li-ion insertion/extraction. The MR-Si/G composite is used as the anode material for lithium ion batteries, which shows high reversible capacity and ascendant cycling stability reach to 950 mAh·g-1 at a current density of 50 mA·g-1 after 60 cycles. These may be conducive to the further advancement of Si-based composite anode design.

  1. A DFT study on graphene, SiC, BN, and AlN nanosheets as anodes in Na-ion batteries.

    Science.gov (United States)

    Hosseinian, A; Khosroshahi, E Saedi; Nejati, K; Edjlali, E; Vessally, E

    2017-11-25

    A great concern exists about the lifetime, cost, low-temperature performance, and safety of Li-ion batteries. Na-ion batteries (NIB) are an alternative to the Li-ion batteries due to the wide availability of sodium, its low cost, and nontoxicity. Here, we examined the Na and Na + adsorption on nanosheets of carbon (graphene), AlN, BN, and SiC to explore their potential use as an anode in NIBs. The interaction of atomic Na was found to play the main role in producing different nanosheet cell voltages. Unlike the graphene and SiC nanosheets, the lone pairs on the surface of the AlN and BN nanosheets hinder the Na adsorption and significantly increase the cell voltage. The order of magnitude of the nanosheet cell voltage as an anode in NIBs is as follows: AlN (1.49 V) > BN (1.46 V) > > C (0.69 V) > SiC (0.61 V). The AlN and BN nanosheets may be appropriate compounds for NIBs and their cell voltages are comparable with carbon nanotubes.

  2. The strain effect in the surface barrier structures prepared on the basis of n-Si and p-Si

    International Nuclear Information System (INIS)

    Mamatkarimov, O.O.; Tuychiev, U.A.

    2004-01-01

    Full text: One of the ways of creation of large deformations in small volume of the semiconductor is the deformation created by a needle. At insignificant change of external influence the large deformation under a needle in small volume of the semiconductor the significant change of electrophysical parameters of the semiconductor in small volume is created. Therefore, in the present work the results of researches of local pressure influence on physical properties of surface barrier structures has been performed on the basis of silicon with Ni and Mn impurity. The relative changes of a direct current made on the basis n-Si and p-Si from a different degree of compensation are given depending on size of local pressure are shown. Change of current in structures Au-Si -Sb with specific resistance of base ρ=80 Ω·cm and ρ=200 Ω·cm are I p /I 0 =3-3.5 times and I P /I ) =2-2.5 times at pressure P=1.6·10 8 Pa respectively. These data show, that in structures received on the basis of initial silicon, change of a direct current with pressure is in inverse proportion to size of resistance of base of the diode. And in structures Au-Si -Sb with specific resistance of base ρ=5·10 2 Ω·cm and ρ=3·10 3 Ω·cm these changes accordingly are I P /I 0 =7 and I P /I 0 =14. Changes of direct current relative to initial value for structures on the basis p-Si with specific resistance ρ=7·10 2 Ω·cm and ρ=4·10 3 Ω·cm) are I P /I 0 =9 and I P /I 0 =16 respectively. The same changes of direct current of structures on the basis P-Si at local pressure are I P /I 0 =2-2.5. The given values I P /I 0 testify that as in structures Au-Si -Sb, and structures Sb-p-Si -Au, unlike structures on the basis of initial silicon, the values I P /I 0 are increased with increase of specific resistance of base of structures

  3. Pt-Si Bifunctional Surfaces for CO and Methanol Electro-Oxidation

    DEFF Research Database (Denmark)

    Permyakova, Anastasia A.; Han, Binghong; Jensen, Jens Oluf

    2015-01-01

    Bimetallic surfaces offer activity benefits derived from synergistic effects among active sites with uniquely different functions, which is particularly important for the development of highly effective heterogeneous catalysts for specific technological applications, such as energy conversion...... and storage. Here we report on Pt-Si bulk samples prepared by arc-melting, for the first time, with high activities toward the electro-oxidation of CO and methanol. Increasing the Si concentration on the surface was correlated with the shifts of onset oxidation potentials to lower values and higher activities...... for CO and methanol electro-oxidation. It is proposed that the reaction on the Pt-Si catalyst could follow a Langmuir-Hinshelwood type of mechanism, where substantially enhanced catalytic activity is attributed to the fine-tuning of the surface Pt-Si atomic structure....

  4. Theoretical reconsideration of antiferromagnetic Fermi surfaces in URu{sub 2}Si{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Yamagami, Hiroshi, E-mail: yamagami@cc.kyoto-su.ac.jp [Department of Physics, Faculty of Science, Kyoto Sangyo University, Kyoto 603-8555 (Japan)

    2011-01-01

    In an itinerant 5f-band model, the antiferromagnetic (AFM) Fermi surfaces of URu{sub 2}Si{sub 2} are reconsidered using a relativistic LAPW method within a local spin-density approximation, especially taking into account the lattice parameters dependent on pressures. The reduction of the z-coordinate of the Si sites results in the effect of flattening the Ru-Si layers of URu{sub 2}Si{sub 2} crystal structure, thus weakening a hybridization/mixing between the U-5f and Ru-4d states in the band structure. Consequently the 5f bands around the Fermi level are more flat in the dispersion with decreasing the z-coordinate, thus producing three closed Fermi surfaces like 'curing-stone', 'rugby-ball' and 'ball'. The origins of de Haas-van Alphen branches can be qualitatively interpreted from the obtained AFM Fermi surfaces.

  5. Theoretical reconsideration of antiferromagnetic Fermi surfaces in URu2Si2

    International Nuclear Information System (INIS)

    Yamagami, Hiroshi

    2011-01-01

    In an itinerant 5f-band model, the antiferromagnetic (AFM) Fermi surfaces of URu 2 Si 2 are reconsidered using a relativistic LAPW method within a local spin-density approximation, especially taking into account the lattice parameters dependent on pressures. The reduction of the z-coordinate of the Si sites results in the effect of flattening the Ru-Si layers of URu 2 Si 2 crystal structure, thus weakening a hybridization/mixing between the U-5f and Ru-4d states in the band structure. Consequently the 5f bands around the Fermi level are more flat in the dispersion with decreasing the z-coordinate, thus producing three closed Fermi surfaces like 'curing-stone', 'rugby-ball' and 'ball'. The origins of de Haas-van Alphen branches can be qualitatively interpreted from the obtained AFM Fermi surfaces.

  6. Ion-beam-induced ferromagnetism in Mn-doped PrFeO{sub 3} thin films grown on Si (100)

    Energy Technology Data Exchange (ETDEWEB)

    Sultan, Khalid; Ikram, M.; Mir, Sajad Ahmad; Habib, Zubida; Aarif ul Islam, Shah [National Institute of Technology, Solid State Physics Lab. Department of Physics, Srinagar, J and K (India); Ali, Yasir [Saint Longwal Institute of Engineering and Technology, Sangrur, Punjab (India); Asokan, K. [Inter University Accelerator Centre, Materials Science Division, New Delhi (India)

    2016-01-15

    The present study shows that the ion beam irradiation induces room-temperature ferromagnetic ordering in pulsed laser-deposited Mn-doped PrFeO{sub 3} thin films on Si (100) apart from change in the morphological, structural and electrical properties. Dense electronic excitation produced by high-energy 120 MeV Ag{sup 9+} ion irradiation causes change in surface roughness, crystallinity and strain. It is also evident that these excitations induce the magnetic ordering in this system. The observed modifications are due to the large electronic energy deposited by swift heavy ions irradiation. The appearance of ferromagnetism at 300 K in these samples after irradiation may be attributed to the canting of the antiferromagnetically ordered spins due to the structural distortion. (orig.)

  7. Metal Hydride assited contamination on Ru/Si surfaces

    NARCIS (Netherlands)

    Pachecka, Malgorzata; Lee, Christopher James; Sturm, Jacobus Marinus; Bijkerk, Frederik

    2013-01-01

    In extreme ultraviolet lithography (EUVL) residual tin, in the form of particles, ions, and atoms, can be deposited on nearby EUV optics. During the EUV pulse, a reactive hydrogen plasma is formed, which may be able to react with metal contaminants, creating volatile and unstable metal hydrides that

  8. Comparative investigation of the c(2 Multiplication-Sign 2)-Si/Cu(0 1 1) and ({radical}3 Multiplication-Sign {radical}3)R30 Degree-Sign -Cu{sub 2}Si/Cu(1 1 1) surface alloys using DFT

    Energy Technology Data Exchange (ETDEWEB)

    Shuttleworth, I.G., E-mail: shuttleworth.ian@gmail.com [Jubail University College, Jubail Industrial City 31961 (Saudi Arabia)

    2012-02-01

    The electronic structure of the c(2 Multiplication-Sign 2)-Si/Cu(0 1 1) surface alloy has been investigated and compared to the structures seen in the three phases of the ({radical}3 Multiplication-Sign {radical}3)R30 Degree-Sign Cu{sub 2}Si/Cu(1 1 1) system, using LCAO-DFT. The weighted surface energy increase between the alloyed Cu(0 1 1) and Cu(1 1 1) surfaces is 126.7 meV/Si atom. This increase in energy for the (0 1 1) system when compared to the (1 1 1) system is assigned to the transition from a hexagonal to a rectangular local bonding environment for the Si ion cores, with the hexagonal environment being energetically more favorable. The Si 3s state is shown to interact covalently with the Cu 4s and 4p states whereas the Si 3p state, and to a lesser extent the Si 3d state, forms a mixture of covalent and metallic bonds with the Cu states. The Cu 4s and 4p states are shown to be altered by approximately the same amount by both the removal of Cu ion cores and the inclusion of Si ion cores during the alloying of the Cu(0 1 1) surface. However, the Cu 3d states in the surface and second layers of the alloy are shown to be more significantly altered during the alloying process by the removal of Cu ion cores from the surface layer rather than by the addition of Si ion cores. This is compared to the behavior of the Cu 3d states in the surface and second layers of the each phase of the ({radical}3 Multiplication-Sign {radical}3)R30 Degree-Sign -Cu{sub 2}Si/Cu(1 1 1) alloy and consequently the loss of Cu-Cu periodicity during alloying of the Cu(0 1 1) surface is conjectured as the driving force for changes to the Cu 3d states. The accompanying changes to the Cu 4s and 4p states in both the c(2 Multiplication-Sign 2)-Si/Cu(0 1 1) and ({radical}3 Multiplication-Sign {radical}3)R30 Degree-Sign -Cu{sub 2}Si/Cu(1 1 1) alloys are quantified and compared. The study concludes with a brief quantitative study of changes in the bond order of the Cu-Cu bonds during alloying of

  9. Stability and symmetry of ion-induced surface patterning

    Science.gov (United States)

    Matthes, Christopher S. R.; Ghoniem, Nasr M.; Walgraef, Daniel

    2017-12-01

    We present a continuum model of ion-induced surface patterning. The model incorporates the atomic processes of sputtering, re-deposition and surface diffusion, and is shown to display the generic features of the damped Kuramoto-Sivashinsky (KS) equation of non-linear dynamics. Linear and non-linear stability analyses of the evolution equation give estimates of the emerging pattern wavelength and spatial symmetry. The analytical theory is confirmed by numerical simulations of the evolution equation with the Fast Fourier Transform method, where we show the influence of the incident ion angle, flux, and substrate surface temperature. It is shown that large local geometry variations resulting in quadratic non-linearities in the evolution equation dominate pattern selection and stability at long time scales.

  10. Advanced Surface Polishing For Accelerator Technology Using Ion Beams

    Science.gov (United States)

    Insepov, Z.; Norem, J.; Hassanein, A.; Wu, A. T.

    2009-03-01

    A gas cluster ion beam (GCIB) technology was successfully applied to surface treatment of Cu, stainless steel, Ti, and Nb samples and to Nb rf-cavities by using accelerated cluster ion beams of Ar, O2 and combinations of them, with accelerating voltages up to 35 kV. DC field emission (dark current) measurements and electron microscopy were used to investigate metal surfaces treated by GCIB. The experimental results showed that GCIB technique can significantly reduce the number of field emitters and can change the structure of the Nb oxide layer on the surface. The RF tests of the GCIB-treated Nb rf-cavities showed improvement of the quality factor Q at 4.5 K. The superconducting gap was also enhanced by using the oxygen GCIB irradiation exposure.

  11. Adsorption and combing of DNA on HOPG surfaces of bulk crystals and nanosheets: application to the bridging of DNA between HOPG/Si heterostructures

    International Nuclear Information System (INIS)

    Rose, F; Martin, P; Fujita, H; Kawakatsu, H

    2006-01-01

    Controlled and reproducible combing of λ-phage DNA molecules can be realized in predetermined orientations on highly oriented pyrolitic graphite (HOPG) surfaces. Observations by atomic force microscopy (AFM) show that DNA adsorption onto HOPG surfaces leads to different hierarchical organizations such as balls, networks, films, and fractal structures. HOPG nanosheets (3.5-100 nm thick) were created by simply rubbing a HOPG crystal onto a silicon oxide surface, and then patterned with a focused ion beam (FIB) to fabricate HOPG/Si heterostructures (arrays of silicon micropillars and microtracks decorated on their top surface with HOPG nanosheets). The surface reactivity of HOPG nanosheets toward DNA is found to be the same as of HOPG bulk crystals. Finally, combing is used to attach and suspend bundles of approximately 20-50 DNA molecules between HOPG/Si heterostructures

  12. Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates.

    Science.gov (United States)

    López, Gema; Ortega, Pablo R; Voz, Cristóbal; Martín, Isidro; Colina, Mónica; Morales, Anna B; Orpella, Albert; Alcubilla, Ramón

    2013-01-01

    The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300-1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (S eff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450-1000 nm.

  13. Mechanical and tribological properties of ion beam-processed surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Kodali, Padma [Univ. of Maryland, College Park, MD (United States)

    1998-01-01

    The intent of this work was to broaden the applications of well-established surface modification techniques and to elucidate the various wear mechanisms that occur in sliding contact of ion-beam processed surfaces. The investigation included characterization and evaluation of coatings and modified surfaces synthesized by three surface engineering methods; namely, beam-line ion implantation, plasma-source ion implantation, and DC magnetron sputtering. Correlation among measured properties such as surface hardness, fracture toughness, and wear behavior was also examined. This dissertation focused on the following areas of research: (1) investigating the mechanical and tribological properties of mixed implantation of carbon and nitrogen into single crystal silicon by beam-line implantation; (2) characterizing the mechanical and tribological properties of diamond-like carbon (DLC) coatings processed by plasma source ion implantation; and (3) developing and evaluating metastable boron-carbon-nitrogen (BCN) compound coatings for mechanical and tribological properties. The surface hardness of a mixed carbon-nitrogen implant sample improved significantly compared to the unimplanted sample. However, the enhancement in the wear factor of this sample was found to be less significant than carbon-implanted samples. The presence of nitrogen might be responsible for the degraded wear behavior since nitrogen-implantation alone resulted in no improvement in the wear factor. DLC coatings have low friction, low wear factor, and high hardness. The fracture toughness of DLC coatings has been estimated for the first time. The wear mechanism in DLC coatings investigated with a ruby slider under a contact stress of 1 GPa was determined to be plastic deformation. The preliminary data on metastable BCN compound coatings indicated high friction, low wear factor, and high hardness.

  14. Mechanical and tribological properties of ion beam-processed surfaces

    International Nuclear Information System (INIS)

    Kodali, P.

    1998-01-01

    The intent of this work was to broaden the applications of well-established surface modification techniques and to elucidate the various wear mechanisms that occur in sliding contact of ion-beam processed surfaces. The investigation included characterization and evaluation of coatings and modified surfaces synthesized by three surface engineering methods; namely, beam-line ion implantation, plasma-source ion implantation, and DC magnetron sputtering. Correlation among measured properties such as surface hardness, fracture toughness, and wear behavior was also examined. This dissertation focused on the following areas of research: (1) investigating the mechanical and tribological properties of mixed implantation of carbon and nitrogen into single crystal silicon by beam-line implantation; (2) characterizing the mechanical and tribological properties of diamond-like carbon (DLC) coatings processed by plasma source ion implantation; and (3) developing and evaluating metastable boron-carbon-nitrogen (BCN) compound coatings for mechanical and tribological properties. The surface hardness of a mixed carbon-nitrogen implant sample improved significantly compared to the unimplanted sample. However, the enhancement in the wear factor of this sample was found to be less significant than carbon-implanted samples. The presence of nitrogen might be responsible for the degraded wear behavior since nitrogen-implantation alone resulted in no improvement in the wear factor. DLC coatings have low friction, low wear factor, and high hardness. The fracture toughness of DLC coatings has been estimated for the first time. The wear mechanism in DLC coatings investigated with a ruby slider under a contact stress of 1 GPa was determined to be plastic deformation. The preliminary data on metastable BCN compound coatings indicated high friction, low wear factor, and high hardness

  15. Ion beam synthesis and characterization of large area 3C-SiC pseudo substrates for homo- and heteroepitaxy

    International Nuclear Information System (INIS)

    Haeberlen, Maik

    2006-12-01

    In this work, large area epitaxial 3C-SiC films on Si(100) and Si(111) were formed by ion beam synthesis and subsequently characterized for their structural and crystalline properties. These SiC/Si structures are meant to be used as SiC pseudosubstrates for the homo- and heteroepitaxial growth of other compound semiconductors. The suitability of these pseudosubstrates for this purpose was tested using various epitaxial systems and thin film growth methods. For this the homoepitaxial growth of 3C-SiC employing C 60 -MBE and the heteroepitaxial growth of hexagonal GaN films grown by MOCVD and IBAMBA was studied in detail. The comparison of the structural and crystalline properties with data from literature enabled a qualified judgement of the potential of the 3C-SiC pseudosubstrates as an alternative substrate for the epitaxial growth of such films. These new 3C-SiC pseudosubstrates also enabled studies of other little known epitaxial systems: For the first time hexagonal ZnO films on (111) oriented pseudosubstrates were grown using PLD. The method if IBAMBE enabled the growth of cubic GaN layers on (100)-oriented pseudosubstrates. (orig.)

  16. SiO2/polyacrylonitrile membranes via centrifugal spinning as a separator for Li-ion batteries

    Science.gov (United States)

    Yanilmaz, Meltem; Lu, Yao; Li, Ying; Zhang, Xiangwu

    2015-01-01

    Centrifugal spinning is a fast, cost-effective and safe alternative to the electrospinning technique, which is commonly used for making fiber-based separator membranes. In this work, SiO2/polyacrylonitrile (PAN) membranes were produced by using centrifugal spinning and they were characterized by using different electrochemical techniques for use as separators in Li-ion batteries. SiO2/PAN membranes exhibited good wettability and high ionic conductivity due to their highly porous fibrous structure. Compared with commercial microporous polyolefin membranes, SiO2/PAN membranes had larger liquid electrolyte uptake, higher electrochemical oxidation limit, and lower interfacial resistance with lithium. SiO2/PAN membrane separators were assembled into lithium/lithium iron phosphate cells and these cells delivered high capacities and exhibited good cycling performance at room temperature. In addition, cells using SiO2/PAN membranes showed superior C-rate performance compared to those using microporous PP membrane.

  17. Super-hydrophobic surfaces of SiO₂-coated SiC nanowires: fabrication, mechanism and ultraviolet-durable super-hydrophobicity.

    Science.gov (United States)

    Zhao, Jian; Li, Zhenjiang; Zhang, Meng; Meng, Alan

    2015-04-15

    The interest in highly water-repellent surfaces of SiO2-coated SiC nanowires has grown in recent years due to the desire for self-cleaning and anticorrosive surfaces. It is imperative that a simple chemical treatment with fluoroalkylsilane (FAS, CF3(CF2)7CH2CH2Si(OC2H5)3) in ethanol solution at room temperature resulted in super-hydrophobic surfaces of SiO2-coated SiC nanowires. The static water contact angle of SiO2-coated SiC nanowires surfaces was changed from 0° to 153° and the morphology, microstructure and crystal phase of the products were almost no transformation before and after super-hydrophobic treatment. Moreover, a mechanism was expounded reasonably, which could elucidate the reasons for their super-hydrophobic behavior. It is important that the super-hydrophobic surfaces of SiO2-coated SiC nanowires possessed ultraviolet-durable (UV-durable) super-hydrophobicity. Copyright © 2014 Elsevier Inc. All rights reserved.

  18. Surface spins disorder in uncoated and SiO{sub 2} coated maghemite nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Zeb, F. [Nanoscience and Technology Laboratory, International Islamic University, H-10, 44000 Islamabad (Pakistan); Nadeem, K., E-mail: kashif.nadeem@iiu.edu.pk [Nanoscience and Technology Laboratory, International Islamic University, H-10, 44000 Islamabad (Pakistan); Shah, S. Kamran Ali; Kamran, M. [Nanoscience and Technology Laboratory, International Islamic University, H-10, 44000 Islamabad (Pakistan); Gul, I. Hussain [School of Chemical & Materials Engineering, National University of Sciences and Technology (NUST), H-12, 44000 Islamabad, Pakistan (Pakistan); Ali, L. [Materials Research Laboratory, International Islamic University, H-10, 44000 Islamabad (Pakistan)

    2017-05-01

    We studied the surface spins disorder in uncoated and silica (SiO{sub 2}) coated maghemite (γ-Fe{sub 2}O{sub 3}) nanoparticles using temperature and time dependent magnetization. The average crystallite size for SiO{sub 2} coated and uncoated nanoparticles was about 12 and 29 nm, respectively. Scanning electron microscopy (SEM) showed that the nanoparticles are spherical in shape and well separated. Temperature scans of zero field cooled (ZFC)/field cooled (FC) magnetization measurements showed lower average blocking temperature (T{sub B}) for SiO{sub 2} coated maghemite nanoparticles as compared to uncoated nanoparticles. The saturation magnetization (M{sub s}) of SiO{sub 2} coated maghemite nanoparticles was also lower than the uncoated nanoparticles and is attributed to smaller average crystallite size of SiO{sub 2} coated nanoparticles. For saturation magnetization vs. temperature data, Bloch's law (M(T)= M(0).(1− BT{sup b})) was fitted well for both uncoated and SiO{sub 2} coated nanoparticles and yields: B =3×10{sup −7} K{sup -b}, b=2.22 and B=0.0127 K{sup -b}, b=0.57 for uncoated and SiO{sub 2} coated nanoparticles, respectively. Higher value of B for SiO{sub 2} coated nanoparticles depicts decrease in exchange coupling due to enhanced surface spins disorder (broken surface bonds) as compared to uncoated nanoparticles. The Bloch's exponent b was decreased for SiO{sub 2} coated nanoparticles which is due to their smaller average crystallite size or finite size effects. Furthermore, a sharp increase of coercivity at low temperatures (<25 K) was observed for SiO{sub 2} coated nanoparticles which is also due to contribution of increased surface anisotropy or frozen surface spins in these smaller nanoparticles. The FC magnetic relaxation data was fitted to stretched exponential law which revealed slower magnetic relaxation for SiO{sub 2} coated nanoparticles. All these measurements revealed smaller average crystallite size and enhanced surface

  19. Crystalline and lattice matched Ba0.7Si0.3O layers on plane and vicinal Si(001) surfaces

    International Nuclear Information System (INIS)

    Zachariae, J.

    2006-01-01

    In this work the low temperature growth conditions of epitaxial and lattice-matched Ba 0.7 Sr 0.3 O layers on Si(100) were investigated using the combination of low energy electron diffraction (LEED), x-ray photoemission (XPS) and electron energy loss spectroscopy (EELS). With these methods crystallinity, stoichiometry and electronic structure of both occupied and unoccupied levels were studied as a function of layer thickness. Oxide layers were generated by evaporating the metals in oxygen ambient pressure with the sample at room temperature. Perfect crystallinity and lattice matching was only obtained starting with a preadsorbed monolayer (ML) of Sr or Ba at a concentration close to one monolayer. The XPS analysis shows that Ba 0.7 Sr 0.3 O as a high-K gate dielectric offers an adequate band gap, an appropriate band alignment and a atomically sharp interface to the Si(001) substrate. No silicide and silicate species, or SiO 2 formation at the interface after oxidation were found. To show that Ba 0.7 Sr 0.3 O is really appropriate to replace SiO 2 as a gate dielectric, first C-V and I-V curves of MOS-diodes with SrO, BaO and Ba 0.7 Sr 0.3 O as gateoxide were measured under ambient conditions. Besides other results, it turns out that the measured dielectric constant of Ba 0.7 Sr 0.3 O conforms with the expected value of ε ∼ 25 - 30. Exploring ways for self-organized structuring of insulating films, the possibility to produce replicas of step trains, given by a vicinal Si(001)-4 [110] surface, in layers of crystalline and perfectly lattice matched Ba 0.7 Sr 0.3 O were investigated. For this purpose high-resolution spot profile analyses in low-energy electron diffraction (SPA-LEED) both on flat Si(001) and on vicinal Si(001)-4 [110] were carried out. The G(S) analysis of these mixed oxide layers reveals a strong influence of local compositional fluctuations of Sr and Ba ions and their respective scattering phases, which appears as an unphysically large variation

  20. Adsorption of carbon monoxide on the Si(111)-7 × 7 surface

    Science.gov (United States)

    Shong, Bonggeun

    2017-05-01

    The adsorption of CO and surface chemistry of Si are well-understood topics in surface science. However, research into the adsorption of CO on the Si(111)-7 × 7 surface is deficient. In this study, the adsorption of CO on Si(111)-7 × 7 is investigated via high-level density functional theory calculations using cluster model. Two adsorption configurations are found to be kinetically and thermodynamically viable: on-top on rest-atoms and back-bond insertion on adatoms, both binding to the surface via C atom. Structural, electronic, and spectroscopic properties of the adsorbates indicate a σ-donating/π-accepting nature of the COsbnd Si bonds in both configurations. The domination of σ-donation in the on-top configuration results in a net positive charge on the on-top adsorbate, and the opposite situation yields a net negative charge on the back-bond insertion adsorbates. Our study provides a detailed understanding of the previous experimental observations of fundamental surface chemical phenomena, suggesting possible applications of Si surface functionalization using CO.

  1. Surface-site-selective study of valence electronic structures of clean Si(100)-2x1 using Si-L23VV Auger electron-Si-2p photoelectron coincidence spectroscopy

    International Nuclear Information System (INIS)

    Kakiuchi, Takuhiro; Nagaoka, Shinichi; Hashimoto, Shogo; Fujita, Narihiko; Tanaka, Masatoshi; Mase, Kazuhiko

    2010-01-01

    Valence electronic structures of a clean Si(100)-2x1 surface are investigated in a surface-site-selective way using Si-L 23 VV Auger electron-Si-2p photoelectron coincidence spectroscopy. The Si-L 23 VV Auger electron spectra measured in coincidence with Si-2p photoelectrons emitted from the Si up-atoms or Si 2nd-layer of Si(100)-2x1 suggest that the position where the highest density of valence electronic states located in the vicinity of the Si up-atoms is shifted by 0.8 eV towards lower binding energy relative to that in the vicinity of the Si 2nd-layer. Furthermore, the valence band maximum in the vicinity of the Si up-atoms is indicated to be shifted by 0.1 eV towards lower binding energy relative to that in the vicinity of the Si 2nd-layer. These results are direct evidence of the transfer of negative charge from the Si 2nd-layer to the Si up-atoms. (author)

  2. DEPENDENCE OF THE SURFACE-ENHANCED RAMAN SCATTERING SIGNAL ON THE SHAPE OF SILVER NANOSTRUCTURES GROWN IN THE SiO2 /n-Si POROUS TEMPLATE

    Directory of Open Access Journals (Sweden)

    D. V. Yakimchuk

    2017-01-01

    Full Text Available Surface-enhanced Raman scattering is a powerful method used in chemoand biosensorics. The aim of this work was to determine the relationship between the signal of Surface-enhanced Raman scattering and the shape of silver nanostructures under the influence of laser radiation with different power.Plasmonic nanostructures were synthesized in silicon dioxide pores on monocrystalline silicon n-type substrate. The pores were formed using ion-track technology and selective chemical etching. Silver deposition was carried out by galvanic displacement method. Synthesis time was chosen as a parameter that allows controlling the shape of a silver deposit in the pores of silicon dioxide on the surface of single-crystal n-silicon during electrodeless deposition. Deposition time directly effects on the shape of metal nanostructures.Analysis of the dynamics of changing the morphology of the metal deposit showed that as the deposition time increases, the metal evolves from individual metallic crystallites within the pores at a short deposition time to dendritic-like nanostructures at a long time. The dependence of the intensity of Surface-enhanced Raman scattering spectra on the shape of the silver deposit is studied at the powers of a green laser (λ = 532 nm from 2.5 μW to 150 μW on the model dye analyte Rodamin 6G. The optimum shape of the silver deposit and laser power is analyzed from this point of view design of active surfaces for Surface-enhanced Raman scattering with nondestructive control of small concentrations of substances.The silver nanostructures obtained in porous template SiO2 on n-type silicon substrate could be used as plasmon-active surfaces for nondestructive investigations of substances with low concentrations at low laser powers. 

  3. Charactrization of a Li-ion battery based stand-alone a-Si photovoltaic system

    International Nuclear Information System (INIS)

    Hamid Vishkasougheh, Mehdi; Tunaboylu, Bahadir

    2014-01-01

    Highlights: • An Li-ion battery based stand-alone a-Si PV was designed. The system composed of three a-Si panels with an efficiency of 7% and 40 cells of LFP batteries. • Effects of solar radiation and environmental temperature for three cities, Istanbul, Ankara, and Adana, have been investigated on a-Si panels. • Using transition formulas BSPV outputs are predictable for any location out of standard test condition. - Abstract: The number of photovoltaic (PV) system installations is increasing rapidly. As more people learn about this versatile and often cost-effective power option, this trend will accelerate. This document presents a recommended design for a battery based stand-alone photovoltaic system (BSPV). BSPV system has the ability to be applied in different areas, including warning signals, lighting, refrigeration, communication, residential water pumping, remote sensing, and cathodic protection. The presented calculation method gives a proper idea for a system sizing technique. Based on application load, different scenarios are possible for designing a BSPV system. In this study, a battery based stand-alone system was designed. The electricity generation part is three a-Si panels, which are connected in parallel, and for the storage part LFP (lithium iron phosphate) battery was used. The high power LFP battery packs are 40 cells each 8S5P (configured 8 series 5 parallel). Each individual pack weighs 0.5 kg and is 25.6 V. In order to evaluate the efficiency of a-Si panels with respect to the temperature and the solar irradiation, cities of Istanbul, Ankara and Adana in Turkey were selected. Temperature and solar irradiation were gathered from reliable sources and by using translation equations, current and voltage output of panels were calculated. As a result of these calculations, current and energy outputs were computed by considering an average efficient solar irradiation time value per day in Turkey. The calculated power values were inserted to a

  4. Ion-implanted Si-nanostructures buried in a SiO{sub 2} substrate studied with soft-x-ray spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Williams, R.; Rubensson, J.E.; Eisebitt, S. [Forschungszentrum Juelich (Germany)] [and others

    1997-04-01

    In recent years silicon nanostructures have gained great interest because of their optical luminescence, which immediately suggests several applications, e.g., in optoelectronic devices. Nanostructures are also investigated because of the fundamental physics involved in the underlying luminescence mechanism, especially attention has been drawn to the influence of the reduced dimensions on the electronic structure. The forming of stable and well-defined nanostructured materials is one goal of cluster physics. For silicon nanostructures this goal has so far not been reached, but various indirect methods have been established, all having the problem of producing less well defined and/or unstable nanostructures. Ion implantation and subsequent annealing is a promising new technique to overcome some of these difficulties. In this experiment the authors investigate the electronic structure of ion-implanted silicon nanoparticles buried in a stabilizing SiO{sub 2} substrate. Soft X-ray emission (SXE) spectroscopy features the appropriate information depth to investigate such buried structures. SXE spectra to a good approximation map the local partial density of occupied states (LPDOS) in broad band materials like Si. The use of monochromatized synchrotron radiation (MSR) allows for selective excitation of silicon atoms in different chemical environments. Thus, the emission from Si atom sites in the buried structure can be separated from contributions from the SiO{sub 2} substrate. In this preliminary study strong size dependent effects are found, and the electronic structure of the ion-implanted nanoparticles is shown to be qualitatively different from porous silicon. The results can be interpreted in terms of quantum confinement and chemical shifts due to neighboring oxygen atoms at the interface to SiO{sub 2}.

  5. Highly stable carbon coated Mg2Si intermetallic nanoparticles for lithium-ion battery anode

    Science.gov (United States)

    Tamirat, Andebet Gedamu; Hou, Mengyan; Liu, Yao; Bin, Duan; Sun, Yunhe; Fan, Long; Wang, Yonggang; Xia, Yongyao

    2018-04-01

    Silicon is an ideal candidate anode material for Li-ion batteries (LIBs). However, it suffers from rapid capacity fading due to large volume expansion upon lithium insertion. Herein, we design and fabricate highly stable carbon coated porous Mg2Si intermetallic anode material using facile mechano-thermal technique followed by carbon coating using thermal vapour deposition (TVD), toluene as carbon source. The electrode exhibits an excellent first reversible capacity of 726 mAh g-1 at a rate of 100 mA g-1. More importantly, the electrode demonstrates high rate capability (380 mAh g-1 at high rate of 2 A g-1) as well as high cycle stability, with capacity retentions of 65% over 500 cycles. These improvements are attributable to both Mg supporting medium and the uniform carbon coating, which can effectively increase the conductivity and electronic contact of the active material and protects large volume alterations during the electrochemical cycling process.

  6. Energy loss and straggling of MeV Si ions in gases

    Energy Technology Data Exchange (ETDEWEB)

    Vockenhuber, C., E-mail: vockenhuber@phys.ethz.ch [Laboratory of Ion Beam Physics, ETH Zurich, Otto-Stern-Weg 5, 8093 Zurich (Switzerland); Arstila, K. [Department of Physics, University of Jyväskylä, 40014 Jyväskylä (Finland); Jensen, J. [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden); Julin, J.; Kettunen, H.; Laitinen, M.; Rossi, M.; Sajavaara, T. [Department of Physics, University of Jyväskylä, 40014 Jyväskylä (Finland); Thöni, M. [Laboratory of Ion Beam Physics, ETH Zurich, Otto-Stern-Weg 5, 8093 Zurich (Switzerland); Whitlow, H.J. [Institut des Microtechnologies Appliquées Arc, Haute Ecole Arc Ingénierie, 2300 La Chaux-de-Fonds (Switzerland)

    2017-01-15

    We present measurements of energy loss and straggling of Si ions in gases. An energy range from 0.5 to 12 MeV/u was covered using the 6 MV EN tandem accelerator at ETH Zurich, Switzerland, and the K130 cyclotron accelerator facility at the University of Jyväskylä, Finland. Our energy-loss data compare well with calculation based on the SRIM and PASS code. The new straggling measurements support a pronounced peak in He gas at around 4 MeV/u predicted by recent theoretical calculations. The straggling curve structure in the other gases (N{sub 2}, Ne, Ar, Kr) is relatively flat in the covered energy range. Although there is a general agreement between the straggling data and the theoretical calculations, the experimental uncertainties are too large to confirm or exclude the predicted weak multi-peak structure in the energy-loss straggling.

  7. Surface depression of glass and surface swelling of ceramics induced by ion implantation

    International Nuclear Information System (INIS)

    Ikeyama, Masami; Saitoh, Kazuo; Nakao, Setsuo; Niwa, Hiroaki; Tanemura, Seita; Miyagawa, Yoshiko; Miyagawa, Souji

    1994-01-01

    By the measurement of the change of the surface shapes of the glass and ceramics in which ion implantation was performed, it was clarified that glass surface was depressed, and ceramic surface swelled. These depression and swelling changed according to the kinds of ions, energy and the amount to be implanted and the temperature of samples. It became clear that the depression of glass surface was nearly proportional to the range of flight of the implanted ions, and the swelling of ceramic surface showed different state in the silicon nitride with strong covalent bond and the alumina and sapphire with strong ionic bond. For the improvement of the mechanical characteristics of solid materials such as hardness, strength, toughness, wear resistance, oxidation resistance and so on, attention has been paid to the surface reforming by high energy ion implantation at MeV level. The change of shapes of base materials due to ion implantation is not always negligible. The experiment was carried out on sintered silicon nitride and alumina, polished sapphire single crystals and quartz glass. The experimental method and the results are reported. (K.I.)

  8. Spontaneous dissociation of a conjugated molecule on the Si(100) surface

    DEFF Research Database (Denmark)

    Lin, Rong; Galili, Michael; Quaade, Ulrich

    2002-01-01

    The adsorption mechanism of alpha-sexithiophene (alpha-6T) on the clean Si(100)-(2x1) surface has been investigated using scanning tunneling microscopy (STM) and first principles electronic structure calculations. We find that at submonolayer coverage, the alpha-6T molecules are not stable...... coverage, the STM images show the existence of complete alpha-6T molecules. In addition, results of the adsorption behavior of alpha-6T molecules on the H-passivated Si(100)-(2x1) surface are reported. On this surface the molecules are highly mobile at room temperature due to the weak molecule...

  9. Surface roughness prediction model in end milling of Al/SiC p MMC ...

    African Journals Online (AJOL)

    This research focuses on study and analyses of surface quality improvement in end milling operation of Al/SiCp metal matrix composite. These materials are selected as they are most widely used in automobile and aerospace industry. This research paper develops an improved mathematical model for surface roughness ...

  10. Molecular dynamics simulation of temperature effects on CF3+ etching of Si surface

    NARCIS (Netherlands)

    Ning, J. P.; Lu, X. D.; Zhao, C. L.; Qin, Y. M.; He, P. N.; Bogaerts, A.; Gou, F. J.

    2010-01-01

    Molecular dynamics method was employed to investigate the effects of the reaction layer formed near the surface region on CF3+ etching of Si at different temperatures. The simulation results show that the coverages of F and C are sensitive to the surface temperature. With increasing temperature, the

  11. High-Density modification of H-Terminated Si(111) surfaces using Short-Chain Alkynes

    NARCIS (Netherlands)

    Pujari, Sidharam P.; Filippov, Alexei D.; Gangarapu, Satesh; Zuilhof, Han

    2017-01-01

    H-Si(111)-terminated surfaces were alkenylated via two routes: Through a novel one-step gas-phase hydrosilylation reaction with short alkynes (C3 to C6) and for comparison via a two-step chlorination and Grignard alkenylation process. All modified surfaces were characterized by static water contact

  12. Dynamic change in the surface and layer structures during epitaxial growth of Si on a Si(111)-7x7 surface

    International Nuclear Information System (INIS)

    Fukaya, Y.; Shigeta, Y.; Maki, K.

    2000-01-01

    In order to investigate the dynamic process during growth of a Si layer on the Si(111)-7x7 surface held at 380 deg. C, the rocking curve of reflection high-energy electron diffraction (RHEED) is continuously measured at 0.5 deg. to 6 deg. at intervals of 0.05 deg. to the glancing angle of the incident electron beam which takes 18 sec. At the initial growth stage, the multilayer islands are grown on the native 7x7 surface with broader Bragg peaks in the rocking curve than those from the native surface. The sharpness of the Bragg peak is subsequently recovered after the thickness of the Si layer reaches 3 BL (1 BL=0.31 nm), at which the growth transforms to layer-by-layer growth. The comparison of the measured rocking curve with the calculated one based on the dynamical theory of RHEED intensity is also performed by optimizing each atomic position in the growing layer so as to minimize the difference between both curves. The space of the double layer of the (111) plane in the multilayer islands expands and is restored to the normal spacing after the growth mode transforms to the layer-by-layer mode. The broadening of the Bragg peaks at the initial growth stage relates to the rearrangement process of a stacking-fault layer in the 7x7 structure on the substrate surface

  13. HREELS study of the adsorption and evolution of diethylamine (DEA) on Si(1 0 0) surfaces

    International Nuclear Information System (INIS)

    Yeninas, S.; Brickman, A.; Craig, J.H.; Lozano, J.

    2008-01-01

    The adsorption of diethylamine (DEA) on Si(1 0 0) at 100 K was investigated using high-resolution electron energy loss spectroscopy (HREELS) and electron stimulated desorption (ESD). The thermal evolution of DEA on Si(1 0 0) was studied using temperature programmed desorption (TPD). Our results demonstrate DEA bonds datively to the Si(1 0 0) surface with no dissociation at 100 K. Thermal desorption of DEA takes place via a β-hydride elimination process leaving virtually no carbon behind. Electronic processing of DEA/Si(1 0 0) at 100 K results in desorption of ethyl groups; however, carbon and nitrogen are deposited on the surface as a result of electron irradiation. Thermal removal of carbon and nitrogen was not possible, indicating the formation of silicon carbide and silicon nitride

  14. Effect of surface passivation by SiN/SiO{sub 2} of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

    Energy Technology Data Exchange (ETDEWEB)

    Gassoumi, Malek, E-mail: malek.gassoumi@fsm.rnu.tn; Mosbahi, Hana; Zaidi, Mohamed Ali [Universite deMonastir, Laboratoire de Micro-Optoelectroniques et Nanostructures, Faculte des Sciences de Monastir (Tunisia); Gaquiere, Christophe [Universite des Sciences et Technologies de Lille, Institut d' Electronique de Microelectronique et de Nanotechnologie IEMN, Departement hyperfrequences et Semiconducteurs (France); Maaref, Hassen [Universite deMonastir, Laboratoire de Micro-Optoelectroniques et Nanostructures, Faculte des Sciences de Monastir (Tunisia)

    2013-07-15

    Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO{sub 2} passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO{sub 2} film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device.

  15. Extreme implanting in Si: A study of ion-induced damage at high temperature and high dose

    International Nuclear Information System (INIS)

    Holland, O.W.

    1994-01-01

    Ion-solid interactions near room temperature and below have been well studied in single-crystal Si. While this has led to a better understanding of the mechanisms responsible for nucleation and growth of lattice damage during irradiation, these studies have not, in general, been extended to high temperatures (e.g., >200 degrees C). This is the case despite the commercialization of ion beam technologies which utilize high-temperature processing, such as separation by implantation of oxygen (SIMOX). In this process, a silicon-on-insulator (SOI) material is produced by implanting a high dose of oxygen ions into a Si wafer to form a buried, stoichiometric oxide layer. Results will be presented of a study of damage accumulation during high-dose implantation of Si at elevated temperatures. In particular, O + -ions were used because of the potential impact of the results on the SIMOX technology. It will be shown that the nature of the damage accumulation at elevated temperatures is quite distinctive and portends the presence of a new mechanism, one which is only dominant under the extreme conditions encountered during ion beam synthesis (i.e., high temperature and high dose). This mechanism is discussed and shown to be quite general and not dependent on the chemical identity of the ions. Also, techniques for suppressing this mechanism by open-quotes defect engineeringclose quotes are discussed. Such techniques are technologically relevant because they offer the possibility of reducing the defect density of the SOI produced by SIMOX

  16. Photoluminescent characteristics of ion beam synthesized Ge nanoparticles in thermally grown SiO2 films

    International Nuclear Information System (INIS)

    Yu, C.F.; Chao, D.S.; Chen, Y.-F.; Liang, J.H.

    2013-01-01

    Prospects of developing into numerous silicon-based optoelectronic applications have prompted many studies on the optical properties of Ge nanoparticles within a silicon oxide (SiO 2 ) matrix. Even with such abundant studies, the fundamental mechanism underlying the Ge nanoparticle-induced photoluminescence (PL) is still an open question. In order to elucidate the mechanism, we dedicate this study to investigating the correlation between the PL properties and microstructure of the Ge nanoparticles synthesized in thermally grown SiO 2 films. Our spectral data show that the peak position, at ∼3.1 eV or 400 nm, of the PL band arising from the Ge nanoparticles was essentially unchanged under different Ge implantation fluences and the temperatures of the following annealing process, whereas the sample preparation parameters modified or even fluctuated (in the case of the annealing temperature) the peak intensity considerably. Given the microscopically observed correlation between the nanoparticle structure and the sample preparation parameters, this phenomenon is consistent with the mechanism in which the oxygen-deficiency-related defects in the Ge/SiO 2 interface act as the major luminescence centers; this mechanism also successfully explains the peak intensity fluctuation with the annealing temperature. Moreover, our FTIR data indicate the formation of GeO x upon ion implantation. Since decreasing of the oxygen-related defects by the GeO x formation is expected to be correlated with the annealing temperature, presence of the GeO x renders further experimental support to the oxygen defect mechanism. This understanding may assist the designing of the manufacturing process to optimize the Ge nanoparticle-based PL materials for different technological applications

  17. In situ study of the effects of heavy-ion irradiation on co-evaporated CoSi2 films

    International Nuclear Information System (INIS)

    Allen, C.W.; Smith, D.A.

    1990-11-01

    The in situ ion irradiation capability of Argonne's HVEM-Tandem User Facility has been employed to determine the effects of 1.5 MeV Kr + irradiation and 300 kV electron irradiation on the crystallization of as-deposited and of partially crystallized 40 nm thick films of CoSi 2 . Ion fluxes ranged from 8.5 x 10 14 to 6.8 x 10 15 m -2 s -1 for which beam heating effects may be neglected. The maximum electron flux at 300 kV was 0.8 x 10 23 m -2 s -1 . The maximum temperature at which crystalline CoSi 2 is amorphized by the ion irradiation of flux = 6.8 x 10 15 m -2 s -1 is between 250 and 280 K. At higher temperatures amorphous material crystallizes by growth of any preexisting crystals and by classical nucleation and growth, with radial growth rates which are proportional to ion flux. The average degree of transformation per ion is 4 x 10 -26 m 3 per ion. Thermally induced crystallization of as-deposited films occurs above approximately 420 K. For ion doses at least as low as 3.4 x 10 16 m -2 ion irradiation at 300 K promotes thermal crystallization at 450 K, by virtue of enhanced apparant nucleation and at large doses, by enhanced growth rate. 8 refs., 2 figs

  18. The Stellar Imager (SI) - A Mission to Resolve Stellar Surfaces, Interiors, and Magnetic Activity

    International Nuclear Information System (INIS)

    Christensen-Dalsgaard, Joergen; Carpenter, Kenneth G; Schrijver, Carolus J; Karovska, Margarita

    2011-01-01

    The Stellar Imager (SI) is a space-based, UV/Optical Interferometer (UVOI) designed to enable 0.1 milli-arcsecond (mas) spectral imaging of stellar surfaces and of the Universe in general. It will also probe via asteroseismology flows and structures in stellar interiors. SI will enable the development and testing of a predictive dynamo model for the Sun, by observing patterns of surface activity and imaging of the structure and differential rotation of stellar interiors in a population study of Sun-like stars to determine the dependence of dynamo action on mass, internal structure and flows, and time. SI's science focuses on the role of magnetism in the Universe and will revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes in the Universe. SI is a 'Landmark/Discovery Mission' in the 2005 Heliophysics Roadmap, an implementation of the UVOI in the 2006 Astrophysics Strategic Plan, and a NASA Vision Mission ('NASA Space Science Vision Missions' (2008), ed. M. Allen). We present here the science goals of the SI Mission, a mission architecture that could meet those goals, and the technology development needed to enable this mission. Additional information on SI can be found at: http://hires.gsfc.nasa.gov/si/.

  19. Neon ion beam induced pattern formation on amorphous carbon surfaces

    Directory of Open Access Journals (Sweden)

    Omar Bobes

    2018-02-01

    Full Text Available We investigate the ripple pattern formation on amorphous carbon surfaces at room temperature during low energy Ne ion irradiation as a function of the ion incidence angle. Monte Carlo simulations of the curvature coefficients applied to the Bradley-Harper and Cater-Vishnyakov models, including the recent extensions by Harrison-Bradley and Hofsäss predict that pattern formation on amorphous carbon thin films should be possible for low energy Ne ions from 250 eV up to 1500 eV. Moreover, simulations are able to explain the absence of pattern formation in certain cases. Our experimental results are compared with prediction using current linear theoretical models and applying the crater function formalism, as well as Monte Carlo simulations to calculate curvature coefficients using the SDTrimSP program. Calculations indicate that no patterns should be generated up to 45° incidence angle if the dynamic behavior of the thickness of the ion irradiated layer introduced by Hofsäss is taken into account, while pattern formation most pronounced from 50° for ion energy between 250 eV and 1500 eV, which are in good agreement with our experimental data.

  20. Evolution of interfacial intercalation chemistry on epitaxial graphene/SiC by surface enhanced Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ferralis, Nicola, E-mail: ferralis@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Carraro, Carlo [Department of Chemical and Biomolecular Engineering, University of California, Berkeley, CA 94720 (United States)

    2014-11-30

    Highlights: • H-intercalated epitaxial graphene–SiC interface studied with surface enhanced Raman. • Evolution of graphene and H–Si interface with UV-ozone, annealing and O-exposure. • H–Si interface and quasi-freestanding graphene are retained after UV-ozone treatment. • Enhanced ozonolytic reactivity at the edges of H-intercalated defected graphene. • Novel SERS method for characterizing near-surface graphene–substrate interfaces. - Abstract: A rapid and facile evaluation of the effects of physical and chemical processes on the interfacial layer between epitaxial graphene monolayers on SiC(0 0 0 1) surfaces is essential for applications in electronics, photonics, and optoelectronics. Here, the evolution of the atomic scale epitaxial graphene-buffer-layer–SiC interface through hydrogen intercalation, thermal annealings, UV-ozone etching and oxygen exposure is studied by means of single microparticle mediated surface enhanced Raman spectroscopy (smSERS). The evolution of the interfacial chemistry in the buffer layer is monitored through the Raman band at 2132 cm{sup −1} corresponding to the Si-H stretch mode. Graphene quality is monitored directly by the selectively enhanced Raman signal of graphene compared to the SiC substrate signal. Through smSERS, a simultaneous correlation between optimized hydrogen intercalation in epitaxial graphene/SiC and an increase in graphene quality is uncovered. Following UV-ozone treatment, a fully hydrogen passivated interface is retained, while a moderate degradation in the quality of the hydrogen intercalated quasi-freestanding graphene is observed. While hydrogen intercalated defect free quasi-freestanding graphene is expected to be robust upon UV-ozone, thermal annealing, and oxygen exposure, ozonolytic reactivity at the edges of H-intercalated defected graphene results in enhanced amorphization of the quasi-freestanding (compared to non-intercalated) graphene, leading ultimately to its complete etching.

  1. Evolution of interfacial intercalation chemistry on epitaxial graphene/SiC by surface enhanced Raman spectroscopy

    International Nuclear Information System (INIS)

    Ferralis, Nicola; Carraro, Carlo

    2014-01-01

    Highlights: • H-intercalated epitaxial graphene–SiC interface studied with surface enhanced Raman. • Evolution of graphene and H–Si interface with UV-ozone, annealing and O-exposure. • H–Si interface and quasi-freestanding graphene are retained after UV-ozone treatment. • Enhanced ozonolytic reactivity at the edges of H-intercalated defected graphene. • Novel SERS method for characterizing near-surface graphene–substrate interfaces. - Abstract: A rapid and facile evaluation of the effects of physical and chemical processes on the interfacial layer between epitaxial graphene monolayers on SiC(0 0 0 1) surfaces is essential for applications in electronics, photonics, and optoelectronics. Here, the evolution of the atomic scale epitaxial graphene-buffer-layer–SiC interface through hydrogen intercalation, thermal annealings, UV-ozone etching and oxygen exposure is studied by means of single microparticle mediated surface enhanced Raman spectroscopy (smSERS). The evolution of the interfacial chemistry in the buffer layer is monitored through the Raman band at 2132 cm −1 corresponding to the Si-H stretch mode. Graphene quality is monitored directly by the selectively enhanced Raman signal of graphene compared to the SiC substrate signal. Through smSERS, a simultaneous correlation between optimized hydrogen intercalation in epitaxial graphene/SiC and an increase in graphene quality is uncovered. Following UV-ozone treatment, a fully hydrogen passivated interface is retained, while a moderate degradation in the quality of the hydrogen intercalated quasi-freestanding graphene is observed. While hydrogen intercalated defect free quasi-freestanding graphene is expected to be robust upon UV-ozone, thermal annealing, and oxygen exposure, ozonolytic reactivity at the edges of H-intercalated defected graphene results in enhanced amorphization of the quasi-freestanding (compared to non-intercalated) graphene, leading ultimately to its complete etching

  2. Surface modification and adhesion improvement of PTFE film by ion beam irradiation

    International Nuclear Information System (INIS)

    Lee, S.W.; Hong, J.W.; Wye, M.Y.; Kim, J.H.; Kang, H.J.; Lee, Y.S.

    2004-01-01

    The polytetrafluoroethylene (PTFE) surfaces, modified by 1 kV Ar + or O 2 + ion beam irradiation, was investigated with in-situ X-ray photoelectron spectroscopy (XPS), scanning electron micrographs (SEM), atomic force microscopy (AFM) measurements. The surface of PTFE films modified by Ar + ion irradiation was carbonized and the surface roughness increased with increasing ion doses. The surface of PTFE films modified by both Ar + ion in O 2 atmosphere and O 2 + ion irradiation formed the oxygen function group on PTFE surface, and the surface roughness change was relatively small. The adhesion improvement in Ar + ion irradiated PTFE surface is attributed to mechanical interlocking due to the surface roughness and -CF-radical, but that in Ar + ion irradiation in an O 2 atmosphere was contributed by the C-O complex and -CF-radical with mechanical interlocking. The C-O complex and -CF-radical in O 2 + ion irradiated surface contributed to the adhesion

  3. Solid-State (29)Si NMR and neutron-diffraction studies of Sr(0.7)K(0.3)SiO(2.85) oxide ion conductors.

    Science.gov (United States)

    Xu, Jungu; Wang, Xiaoming; Fu, Hui; Brown, Craig M; Jing, Xiping; Liao, Fuhui; Lu, Fengqi; Li, Xiaohui; Kuang, Xiaojun; Wu, Mingmei

    2014-07-07

    K/Na-doped SrSiO3-based oxide ion conductors were recently reported as promising candidates for low-temperature solid-oxide fuel cells. Sr0.7K0.3SiO2.85, close to the solid-solution limit of Sr1-xKxSiO3-0.5x, was characterized by solid-state (29)Si NMR spectroscopy and neutron powder diffraction (NPD). Differing with the average structure containing the vacancies stabilized within the isolated Si3O9 tetrahedral rings derived from the NPD study, the (29)Si NMR data provides new insight into the local defect structure in Sr0.7K0.3SiO2.85. The Q(1)-linked tetrahedral Si signal in the (29)Si NMR data suggests that the Si3O9 tetrahedral rings in the K-doped SrSiO3 materials were broken, forming Si3O8 chains. The Si3O8 chains can be stabilized by either bonding with the oxygen atoms of the absorbed lattice water molecules, leading to the Q(1)-linked tetrahedral Si, or sharing oxygen atoms with neighboring Si3O9 units, which is consistent with the Q(3)-linked tetrahedral Si signal detected in the (29)Si NMR spectra.

  4. Surface modification of the MoSiON phase shift mask to reduce critical dimension variation

    Science.gov (United States)

    Choo, Hyeokseong; Seo, Dongwan; Lim, Sangwoo

    2013-10-01

    Phase shift masks (PSMs) were introduced to extend the limits of optical lithography. However, cleaning a MoSiON-based PSM pattern with an ammonium hydroxide/hydrogen peroxide mixture (APM), although efficient at cleaning the PSM pattern, etches the PSM layer, inducing changes in the phase angle and transmittance due to the introduction of variation of the critical dimension (CD). In this study, we investigated the effects of plasma treatment and furnace annealing on the etching of the MoSiON PSM in APM. In particular, we found that the etch behavior and surface chemical state after each treatment were correlated. We also compared variations in the CD between patterned PSM layers and blank masks. After O2 or N2 plasma treatment, the top surface of MoSiON had a thicker transition layer with an extreme increase in O, and a huge variation in CD was also observed after APM treatment. However, CD variation of the patterned MoSiON layer was minimal when the sample was first annealed in NH3 ambient gas and then subjected to APM treatment. This phenomenon may be related to an increase in the portion of the SiO2-like state at the top surface of the MoSiON PSM layer and its optimization without a change in the transition layer thickness.

  5. Surface morphology of amorphous germanium thin films following thermal outgassing of SiO{sub 2}/Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Valladares, L. de los Santos, E-mail: ld301@cam.ac.uk [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom); Dominguez, A. Bustamante [Laboratorio de Cerámicos y Nanomateriales, Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, Apartado Postal 14-0149, Lima (Peru); Llandro, J.; Holmes, S. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom); Quispe, O. Avalos [Laboratorio de Cerámicos y Nanomateriales, Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, Apartado Postal 14-0149, Lima (Peru); Langford, R. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom); Aguiar, J. Albino [Laboratório de Supercondutividade e Materiais Avançados, Departamento de Física, Universidade Federal de Pernambuco, 50670-901, Recife (Brazil); Barnes, C.H.W. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom)

    2014-10-15

    Highlights: • Annealing promotes outgassing of SiO{sub 2}/Si wafers. • Outgassing species embed in the a-Ge film forming bubbles. • The density of bubbles obtained by slow annealing is smaller than by rapid annealing. • The bubbles explode after annealing the samples at 800 °C. • Surface migration at higher temperatures forms polycrystalline GeO{sub 2} islands. - Abstract: In this work we report the surface morphology of amorphous germanium (a-Ge) thin films (140 nm thickness) following thermal outgassing of SiO{sub 2}/Si substrates. The thermal outgassing was performed by annealing the samples in air at different temperatures from 400 to 900 °C. Annealing at 400 °C in slow (2 °C/min) and fast (10 °C/min) modes promotes the formation of bubbles on the surface. A cross sectional view by transmission electron microscope taken of the sample slow annealed at 400 °C reveals traces of gas species embedded in the a-Ge film, allowing us to propose a possible mechanism for the formation of the bubbles. The calculated internal pressure and number of gas molecules for this sample are 30 MPa and 38 × 10{sup 8}, respectively. Over an area of 22 × 10{sup −3} cm{sup 2} the density of bubbles obtained at slow annealing (9 × 10{sup 3} cm{sup −2}) is smaller than that at rapid annealing (6.4 × 10{sup 4} cm{sup −2}), indicating that the amount of liberated gas in both cases is only a fraction of the total gas contained in the s