Surface and near surface defect detection in thick copper EB-welds using eddy current testing

International Nuclear Information System (INIS)

Pitkaenen, J.; Lipponen, A.

2010-01-01

The surface inspection of thick copper electron beam (EB) welds plays an important role in the acceptance of nuclear fuel disposal. The main reasons to inspect these components are related to potential manufacturing and handling defects. In this work the data acquisition software, visualising tools for eddy current (EC) measurements and eddy current sensors were developed for detection of unwanted defects. The eddy current equipment was manufactured by IZFP and the visualising software in active co-operation with Posiva and IZFP for the inspections. The inspection procedure was produced during the development of the inspection techniques. The inspection method development aims to qualify the method for surface and near surface defect detection and sizing according to ENIQ. The study includes technical justification to be carried out, and compilation of a defect catalogue and experience from measurements within the Posiva's research on issues related to manufacturing. The depth of penetration in copper components in eddy current testing is rather small. To detect surface breaking defects the eddy current inspection is a good solution. A simple approach was adopted using two techniques: higher frequency was used to detect surface defects and to determine the dimensions of the defects except depth, lower frequency was used to detect defects having a ligament and for sizing of deeper surface breaking defects. The higher frequency was 30 kHz and the lower frequency was 200 Hz. The higher frequency probes were absolute bobbing coils and lower frequency probes combined transmitter - several receiver coils. To evaluate both methods, calibration blocks were manufactured by FNS for weld inspections. These calibration specimens mainly consisted of electron discharge machined notches and holes of varying shapes, lengths and diameters in the range of 1 mm to 20 mm of depth. Also one copper lid specimen with 152 defects was manufactured and used for evaluation of weld inspection

Dissociation and diffusion of hydrogen on defect-free and vacancy defective Mg (0001) surfaces: A density functional theory study

Energy Technology Data Exchange (ETDEWEB)

Han, Zongying [College of Chemical and Environmental Engineering, Shandong University of Science and Technology, Qingdao 266590 (China); Union Research Center of Fuel Cell, School of Chemical and Environmental Engineering, China University of Mining and Technology, Beijing 100083 (China); Chen, Haipeng [College of Chemical and Environmental Engineering, Shandong University of Science and Technology, Qingdao 266590 (China); College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao 266590 (China); Zhou, Shixue, E-mail: zhoushixue66@163.com [College of Chemical and Environmental Engineering, Shandong University of Science and Technology, Qingdao 266590 (China); College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao 266590 (China)

2017-02-01

Highlights: • Clarify the effect of vacancy defect on H{sub 2} dissociation on Mg (0001) surface. • Demonstrate the effects of vacancy defect on H atom diffusion. • Reveal the minimum energy diffusion path of H atom from magnesium surface into bulk. - Abstract: First-principles calculations with the density functional theory (DFT) have been carried out to study dissociation and diffusion of hydrogen on defect-free and vacancy defective Mg (0001) surfaces. Results show that energy barriers of 1.42 eV and 1.28 eV require to be overcome for H{sub 2} dissociation on defect-free and vacancy defective Mg (0001) surfaces respectively, indicating that reactivity of Mg (0001) surface is moderately increased due to vacancy defect. Besides, the existence of vacancy defect changes the preferential H atom diffusion entrance to the subsurface and reduces the diffusion energy barrier. An interesting remark is that the minimum energy diffusion path of H atom from magnesium surface into bulk is a spiral channel formed by staggered octahedral and tetrahedral interstitials. The diffusion barriers computed for H atom penetration from the surface into inner-layers are all less than 0.70 eV, which is much smaller than the activation energy for H{sub 2} dissociation on the Mg (0001) surface. This suggests that H{sub 2} dissociation is more likely than H diffusion to be rate-limiting step for magnesium hydrogenation.

Automatic inspection of surface defects in die castings after machining

Directory of Open Access Journals (Sweden)

S. J. Świłło

2011-07-01

Full Text Available A new camera based machine vision system for the automatic inspection of surface defects in aluminum die casting was developed by the authors. The problem of surface defects in aluminum die casting is widespread throughout the foundry industry and their detection is of paramount importance in maintaining product quality. The casting surfaces are the most highly loaded regions of materials and components. Mechanical and thermal loads as well as corrosion or irradiation attacks are directed primarily at the surface of the castings. Depending on part design and processing techniques, castings may develop surface discontinuities such as cracks or tears, inclusions due to chemical reactions or foreign material in the molten metal, and pores that greatly influence the material ability to withstand these loads. Surface defects may act as a stress concentrator initiating a fracture point. If a pressure is applied in this area, the casting can fracture. The human visual system is well adapted to perform in areas of variety and change; the visual inspection processes, on the other hand, require observing the same type of image repeatedly to detect anomalies. Slow, expensive, erratic inspection usually is the result. Computer based visual inspection provides a viable alternative to human inspectors. Developed by authors machine vision system uses an image processing algorithm based on modified Laplacian of Gaussian edge detection method to detect defects with different sizes and shapes. The defect inspection algorithm consists of three parameters. One is a parameter of defects sensitivity, the second parameter is a threshold level and the third parameter is to identify the detected defects size and shape. The machine vision system has been successfully tested for the different types of defects on the surface of castings.

Influence of surface defects on the tensile strength of carbon fibers

Science.gov (United States)

Vautard, F.; Dentzer, J.; Nardin, M.; Schultz, J.; Defoort, B.

2014-12-01

The mechanical properties of carbon fibers, especially their tensile properties, are affected by internal and surface defects. In order to asses in what extent the generation of surface defects can result in a loss of the mechanical properties, non-surface treated carbon fibers were oxidized with three different surface treatment processes: electro-chemical oxidation, oxidation in nitric acid, and oxidation in oxygen plasma. Different surface topographies and surface chemistries were obtained, as well as different types and densities of surface defects. The density of surface defects was measured with both a physical approach (Raman spectroscopy) and a chemical approach (Active Surface Area). The tensile properties were evaluated by determining the Weibull modulus and the scale parameter of each reference, after measuring the tensile strength for four different gauge lengths. A relationship between the tensile properties and the nature and density of surface defects was noticed, as large defects largely control the value of the tensile strength. When optimized, some oxidation surface treatment processes can generate surface functional groups as well as an increase of the mechanical properties of the fibers, because of the removal of the contamination layer of pyrolytic carbon generated during the carbonization of the polyacrylonitrile precursor. Oxidation in oxygen plasma revealed to be a promising technology for alternative surface treatment processes, as high levels of functionalization were achieved and a slight improvement of the mechanical properties was obtained too.

Fermi surface contours obtained from scanning tunneling microscope images around surface point defects

International Nuclear Information System (INIS)

Khotkevych-Sanina, N V; Kolesnichenko, Yu A; Van Ruitenbeek, J M

2013-01-01

We present a theoretical analysis of the standing wave patterns in scanning tunneling microscope (STM) images, which occur around surface point defects. We consider arbitrary dispersion relations for the surface states and calculate the conductance for a system containing a small-size tunnel contact and a surface impurity. We find rigorous theoretical relations between the interference patterns in the real-space STM images, their Fourier transforms and the Fermi contours of two-dimensional electrons. We propose a new method for reconstructing Fermi contours of surface electron states, directly from the real-space STM images around isolated surface defects. (paper)

Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

CERN Document Server

Seebauer, Edmund G

2009-01-01

The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

Positron studies of defected metals, metallic surfaces

International Nuclear Information System (INIS)

Bansil, A.

1991-01-01

Specific problems proposed under this project included the treatment of electronic structure and momentum density in various disordered and defected systems. Since 1987, when the new high-temperature superconductors were discovered, the project focused extensively on questions concerning the electronic structure and Fermiology of high-T c superconductors, in particular, (i) momentum density and positron experiments, (ii) angle-resolved photoemission intensities, (iii) effects of disorder and substitutions in the high-T c 's

Thin-film limit formalism applied to surface defect absorption.

Science.gov (United States)

Holovský, Jakub; Ballif, Christophe

2014-12-15

The thin-film limit is derived by a nonconventional approach and equations for transmittance, reflectance and absorptance are presented in highly versatile and accurate form. In the thin-film limit the optical properties do not depend on the absorption coefficient, thickness and refractive index individually, but only on their product. We show that this formalism is applicable to the problem of ultrathin defective layer e.g. on a top of a layer of amorphous silicon. We develop a new method of direct evaluation of the surface defective layer and the bulk defects. Applying this method to amorphous silicon on glass, we show that the surface defective layer differs from bulk amorphous silicon in terms of light soaking.

Discrimination between different kind of surface defects on Compac Discs

DEFF Research Database (Denmark)

Odgaard, Peter Fogh; Wickerhauser, M.V.

2004-01-01

Compact Disc players have problems playing discs with surface defects such as scratches and finger prints. The problem is that handling normal disturbances such as mechanical shocks etc, require a high bandwidth of the controllers which keep the Optical Pick-Up focused and radial tracked on the i......Compact Disc players have problems playing discs with surface defects such as scratches and finger prints. The problem is that handling normal disturbances such as mechanical shocks etc, require a high bandwidth of the controllers which keep the Optical Pick-Up focused and radial tracked...... on the information track on the disc. In order for the controllers to handle the surface defects it is required that they are non-sensitive to the frequency contents of the defect, since a defect can be viewed as a disturbance on the measurements. A simple solution to this problem is to decrease the controller...

Discrimation among different kind of surface defects on Compact Discs

DEFF Research Database (Denmark)

Odgaard, Peter Fogh; Wickerhauser, M.V.

2003-01-01

Compact Disc players have problems playing discs with surface defects such as scratches and finger prints. The problem is that handling normal disturbances such as mechanical shocks etc, require a high bandwidth of the controllers which keep the Optical Pick-Up focused and radial tracked on the i......Compact Disc players have problems playing discs with surface defects such as scratches and finger prints. The problem is that handling normal disturbances such as mechanical shocks etc, require a high bandwidth of the controllers which keep the Optical Pick-Up focused and radial tracked...... on the information track on the disc. In order for the controllers to handle the surface defects it is required that they are non-sensitive to the frequency contents of the defect, since a defect can be viewed as a disturbance on the measurements. A simple solution to this problem is to decrease the controller...

Influence of surface vacancy defects on the carburisation of Fe 110 surface by carbon monoxide

Energy Technology Data Exchange (ETDEWEB)

Chakrabarty, Aurab, E-mail: aurab.chakrabarty@qatar.tamu.edu; Bouhali, Othmane [Texas A& M University at Qatar, P.O. Box 23874, Doha (Qatar); Mousseau, Normand [Département de Physique and RQMP, Université de Montréal, Case Postale 6128, Succursale Centre-Ville, Montréal (QC) H3C 3J7 (Canada); Becquart, Charlotte S. [UMET, UMR CNRS 8207, ENSCL, Université Lille I, 59655 Villeneuve d’Ascq cédex (France); El-Mellouhi, Fedwa, E-mail: felmellouhi@qf.org.qa [Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University, P.O. Box 5825 Doha (Qatar)

2016-07-28

Adsorption and dissociation of gaseous carbon monoxide (CO) on metal surfaces is one of the most frequently occurring processes of carburisation, known as primary initiator of metal dusting corrosion. Among the various factors that can significantly influence the carburisation process are the intrinsic surface defects such as single surface vacancies occurring at high concentrations due to their low formation energy. Intuitively, adsorption and dissociation barriers of CO are expected to be lowered in the vicinity of a surface vacancy, due to the strong attractive interaction between the vacancy and the C atom. Here the adsorption energies and dissociation pathways of CO on clean and defective Fe 110 surface are explored by means of density functional theory. Interestingly, we find that the O adatom, resulting from the CO dissociation, is unstable in the electron-deficit neighbourhood of the vacancy due to its large electron affinity, and raises the barrier of the carburisation pathway. Still, a full comparative study between the clean surface and the vacancy-defected surface reveals that the complete process of carburisation, starting from adsorption to subsurface diffusion of C, is more favourable in the vicinity of a vacancy defect.

Simulation of the evolution of fused silica's surface defect during wet chemical etching

Science.gov (United States)

Liu, Taixiang; Yang, Ke; Li, Heyang; Yan, Lianghong; Yuan, Xiaodong; Yan, Hongwei

2017-08-01

Large high-power-laser facility is the basis for achieving inertial confinement fusion, one of whose missions is to make fusion energy usable in the near future. In the facility, fused silica optics plays an irreplaceable role to conduct extremely high-intensity laser to fusion capsule. But the surface defect of fused silica is a major obstacle limiting the output power of the large laser facility and likely resulting in the failure of ignition. To mitigate, or event to remove the surface defect, wet chemical etching has been developed as a practical way. However, how the surface defect evolves during wet chemical etching is still not clearly known so far. To address this problem, in this work, the three-dimensional model of surface defect is built and finite difference time domain (FDTD) method is developed to simulate the evolution of surface defect during etching. From the simulation, it is found that the surface defect will get smooth and result in the improvement of surface quality of fused silica after etching. Comparatively, surface defects (e.g. micro-crack, scratch, series of pinholes, etc.) of a typical fused silica at different etching time are experimentally measured. It can be seen that the simulation result agrees well with the result of experiment, indicating the FDTD method is valid for investigating the evolution of surface defect during etching. With the finding of FDTD simulation, one can optimize the treatment process of fused silica in practical etching or even to make the initial characterization of surface defect traceable.

Root cementum modulates periodontal regeneration in Class III furcation defects treated by the guided tissue regeneration technique: a histometric study in dogs.

Science.gov (United States)

Gonçalves, Patricia F; Gurgel, Bruno C V; Pimentel, Suzana P; Sallum, Enilson A; Sallum, Antonio W; Casati, Márcio Z; Nociti, Francisco H

2006-06-01

Because the possibility of root cementum preservation as an alternative approach for the treatment of periodontal disease has been demonstrated, this study aimed to histometrically evaluate the effect of root cementum on periodontal regeneration. Bilateral Class III furcation defects were created in dogs, and each dog was randomly assigned to receive one of the following treatments: control (group A): scaling and root planing with the removal of root cementum; or test (group B): removal of soft microbial deposits by polishing the root surface with rubber cups and polishing paste, aiming at maximum cementum preservation. Guided tissue regeneration (GTR) was applied to both groups. Four months after treatment, a superior length of new cementum (3.59 +/- 1.67 mm versus 6.20 +/- 2.26 mm; P = 0.008) and new bone (1.86 +/- 1.76 mm versus 4.62 +/- 3.01 mm; P = 0.002) and less soft tissue along the root surface (2.77 +/- 0.79 mm versus 1.10 +/- 1.48 mm; P = 0.020) was observed for group B. Additionally, group B presented a larger area of new bone (P = 0.004) and a smaller area of soft tissue (P = 0.008). Within the limits of this study, root cementum may modulate the healing pattern obtained by guided tissue regeneration in Class III furcation defects.

Ultrasonic examination of defects close to the outer surface

International Nuclear Information System (INIS)

Benoist, P.; Serre, M.; Champigny, F.

1986-11-01

During the examination of a pressurized water reactor vessel with an in Service Inspection Machine (MIS), various welds are scanned with immersion ultrasonic focused transducers from the inside of the vessel. Defects close to the outer surface are sometimes detected, and sizing with the successive 6 dB drop method leads to oversize some indications; this is caused by various reflections on the outer wall; the corner echo is of particular importance here. CEA and EDF have started an experimental program in order to study the response of volumetric and planar defects located near the outer surface. We present here the first results obtained with artificial defects. 2 refs

Non-destructive test method of determination of surface defects in objects

International Nuclear Information System (INIS)

Gibbons, C.B.; Sewell, M.H.; Taber, R.C.

1975-01-01

In the radiographic method, adsorbed radioactive gas, e.g. krypton 85, is used to determine surface defects such as failures, cracks, and breaks on, e.g. nozzle turbine blades. The surface defects preferably retain the radioactive gas. The defects can be identified by means of a radiographic silver halide emulsion or dispersion made intensive to high energy radiation which is put on the surface or held at a distance to it. Piazine, thiuram disulphide, nitro-1,2,3-benzothiazole or a combination of thiuram disulphide and piazine are amongst others suitable as desensitizing agents. To prevent the adsorbed gases from diffusing out of the defects, the surface can be coated with an insulating mass of e.g. a polymer. The silver halide emulsions are in the form of single, double, or ammoniac emulsions. (DG/LH) [de

Subsurface dimerization in III-V semiconductor (001) surfaces

DEFF Research Database (Denmark)

Kumpf, C.; Marks, L.D.; Ellis, D.

2001-01-01

We present the atomic structure of the c(8 X 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group m atoms ...... takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 X 2) reconstructions of III-V semiconductors can be described in a unified model....

Tuning the relative concentration ratio of bulk defects to surface defects in TiO2 nanocrystals leads to high photocatalytic efficiency.

Science.gov (United States)

Kong, Ming; Li, Yuanzhi; Chen, Xiong; Tian, Tingting; Fang, Pengfei; Zheng, Feng; Zhao, Xiujian

2011-10-19

TiO(2) nanocrystals with tunable bulk/surface defects were synthesized and characterized with TEM, XRD, BET, positron annihilation, and photocurrent measurements. The effect of defects on photocatalytic activity was studied. It was found for the first time that decreasing the relative concentration ratio of bulk defects to surface defects in TiO(2) nanocrystals could significantly improve the separation efficiency of photogenerated electrons and holes, thus significantly enhancing the photocatalytic efficiency.

Magnetic signature of surface defects at nanodiamonds

Energy Technology Data Exchange (ETDEWEB)

Vollmers, Nora Jenny; Gerstmann, Uwe; Schmidt, Wolf Gero [Theoretische Physik, Universitaet Paderborn (Germany)

2011-07-01

The n-type doping of diamond has been a long-standing issue, which recently gained attention in the context of nanodiamonds. Attempts of doping with nitrogen failed to result in the Electron paramagnetic Resonance (EPR) fingerprints expected from bulk material. Instead, the nanodiamond signals show a much larger deviation from the free-electron g-value and are believed to be related to intrinsic, carbon inherited defects. However, the absence of the bulk-like EPR spectra does not mean that nitrogen is not incorporated at all. The N atoms could be built in predominantly at or at least close to the surfaces yielding EPR spectra, very different from those measured in the bulk. In this work, we elucidate the situation by investigating the magnetic signature of paramagnetic defects in the nanodiamonds. We use the gauge-including projector augmented plane wave (GI-PAW) approach to calculate the hyperfine splittings and the elements of the electronic g-tensor. Taking the C(100) surface as a first model system, a possible contribution of nitrogen is discussed by comparing EPR parameters for different N incorporation depths: Incorporated directly at the surface, N gives rise to surface states similar to intrinsic carbon dangling bond-like states. Otherwise N is able to introduce surface conductivity as demonstrated by calculated effective mass tensors.

Surface passivation technology for III-V semiconductor nanoelectronics

International Nuclear Information System (INIS)

Hasegawa, Hideki; Akazawa, Masamichi

2008-01-01

The present status and key issues of surface passivation technology for III-V surfaces are discussed in view of applications to emerging novel III-V nanoelectronics. First, necessities of passivation and currently available surface passivation technologies for GaAs, InGaAs and AlGaAs are reviewed. Then, the principle of the Si interface control layer (ICL)-based passivation scheme by the authors' group is introduced and its basic characterization is presented. Ths Si ICL is a molecular beam epitaxy (MBE)-grown ultrathin Si layer inserted between III-V semiconductor and passivation dielectric. Finally, applications of the Si ICL method to passivation of GaAs nanowires and GaAs nanowire transistors and to realization of pinning-free high-k dielectric/GaAs MOS gate stacks are presented

Regularities of radiation defects build up on oxide materials surface

International Nuclear Information System (INIS)

Bitenbaev, M.I.; Polyakov, A.I.; Tuseev, T.

2005-01-01

Analysis of experimental data by radiation defects study on different oxide elements (silicon, beryllium, aluminium, rare earth elements) irradiated by the photo-, gamma-, neutron-, alpha- radiation, protons and helium ions show, that gas adsorption process on the surface centers and radiation defects build up in metal oxide correlated between themselves. These processes were described by the equivalent kinetic equations for analysis of radiation defects build up in the different metal oxides. It was revealed in the result of the analysis: number of radiation defects are droningly increasing up to limit value with the treatment temperature growth. Constant of radicals death at ionizing radiation increases as well. Amount of surface defects in different oxides defining absorbing activity of these materials looks as: silicon oxide→beryllium oxide→aluminium oxide. So it was found, that most optimal material for absorbing system preparation is silicon oxide by it power intensity and berylium oxide by it adsorption efficiency

Surface Casting Defects Inspection Using Vision System and Neural Network Techniques

Directory of Open Access Journals (Sweden)

Świłło S.J.

2013-12-01

Full Text Available The paper presents a vision based approach and neural network techniques in surface defects inspection and categorization. Depending on part design and processing techniques, castings may develop surface discontinuities such as cracks and pores that greatly influence the material’s properties Since the human visual inspection for the surface is slow and expensive, a computer vision system is an alternative solution for the online inspection. The authors present the developed vision system uses an advanced image processing algorithm based on modified Laplacian of Gaussian edge detection method and advanced lighting system. The defect inspection algorithm consists of several parameters that allow the user to specify the sensitivity level at which he can accept the defects in the casting. In addition to the developed image processing algorithm and vision system apparatus, an advanced learning process has been developed, based on neural network techniques. Finally, as an example three groups of defects were investigated demonstrates automatic selection and categorization of the measured defects, such as blowholes, shrinkage porosity and shrinkage cavity.

Optimization of Soft Tissue Management, Spacer Design, and Grafting Strategies for Large Segmental Bone Defects using the Chronic Caprine Tibial Defect Model

Science.gov (United States)

2015-12-01

for this animal revealed an abscess at the defect site with cultures identifying Staphylococcus aureus infection . Another animal (15G11) developed...foreign body reaction and expose a bleeding vascular surface significantly increased bone formation in the defect site. Adding texture to a smooth...ACHIEVEMENTS: Nothing to report 10. REFERENCES: 1. Johnson, E.N., et al., Infectious complications of open type III tibial fractures among combat

Combined Respiratory Chain Deficiency and UQCC2 Mutations in Neonatal Encephalomyopathy: Defective Supercomplex Assembly in Complex III Deficiencies

Directory of Open Access Journals (Sweden)

René G. Feichtinger

2017-01-01

Full Text Available Vertebrate respiratory chain complex III consists of eleven subunits. Mutations in five subunits either mitochondrial (MT-CYB or nuclear (CYC1, UQCRC2, UQCRB, and UQCRQ encoded have been reported. Defects in five further factors for assembly (TTC19, UQCC2, and UQCC3 or iron-sulphur cluster loading (BCS1L and LYRM7 cause complex III deficiency. Here, we report a second patient with UQCC2 deficiency. This girl was born prematurely; pregnancy was complicated by intrauterine growth retardation and oligohydramnios. She presented with respiratory distress syndrome, developed epileptic seizures progressing to status epilepticus, and died at day 33. She had profound lactic acidosis and elevated urinary pyruvate. Exome sequencing revealed two homozygous missense variants in UQCC2, leading to a severe reduction of UQCC2 protein. Deficiency of complexes I and III was found enzymatically and on the protein level. A review of the literature on genetically distinct complex III defects revealed that, except TTC19 deficiency, the biochemical pattern was very often a combined respiratory chain deficiency. Besides complex III, typically, complex I was decreased, in some cases complex IV. In accordance with previous observations, the presence of assembled complex III is required for the stability or assembly of complexes I and IV, which might be related to respirasome/supercomplex formation.

Defect Detection of Steel Surfaces with Global Adaptive Percentile Thresholding of Gradient Image

Science.gov (United States)

Neogi, Nirbhar; Mohanta, Dusmanta K.; Dutta, Pranab K.

2017-12-01

Steel strips are used extensively for white goods, auto bodies and other purposes where surface defects are not acceptable. On-line surface inspection systems can effectively detect and classify defects and help in taking corrective actions. For detection of defects use of gradients is very popular in highlighting and subsequently segmenting areas of interest in a surface inspection system. Most of the time, segmentation by a fixed value threshold leads to unsatisfactory results. As defects can be both very small and large in size, segmentation of a gradient image based on percentile thresholding can lead to inadequate or excessive segmentation of defective regions. A global adaptive percentile thresholding of gradient image has been formulated for blister defect and water-deposit (a pseudo defect) in steel strips. The developed method adaptively changes the percentile value used for thresholding depending on the number of pixels above some specific values of gray level of the gradient image. The method is able to segment defective regions selectively preserving the characteristics of defects irrespective of the size of the defects. The developed method performs better than Otsu method of thresholding and an adaptive thresholding method based on local properties.

Evaluation and Visualization of Surface Defects - a Numerical and Experimental Study on Sheet-Metal Parts

International Nuclear Information System (INIS)

Andersson, A.

2005-01-01

The ability to predict surface defects in outer panels is of vital importance in the automotive industry, especially for brands in the premium car segment. Today, measures to prevent these defects can not be taken until a test part has been manufactured, which requires a great deal of time and expense. The decision as to whether a certain surface is of acceptable quality or not is based on subjective evaluation. It is quite possible to detect a defect by measurement, but it is not possible to correlate measured defects and the subjective evaluation. If all results could be based on the same criteria, it would be possible to compare a surface by both FE simulations, experiments and subjective evaluation with the same result.In order to find a solution concerning the prediction of surface defects, a laboratory tool was manufactured and analysed both experimentally and numerically. The tool represents the area around a fuel filler lid and the aim was to recreate surface defects, so-called 'teddy bear ears'. A major problem with the evaluation of such defects is that the panels are evaluated manually and to a great extent subjectivity is involved in the classification and judgement of the defects. In this study the same computer software was used for the evaluation of both the experimental and the numerical results. In this software the surface defects were indicated by a change in the curvature of the panel. The results showed good agreement between numerical and experimental results. Furthermore, the evaluation software gave a good indication of the appearance of the surface defects compared to an analysis done in existing tools for surface quality measurements. Since the agreement between numerical and experimental results was good, this indicates that these tools can be used for an early verification of surface defects in outer panels

Finite element simulation of surface defects in the automobile door outer panel

International Nuclear Information System (INIS)

Fukumura, Masaru; Yamasaki, Yuji; Inage, Daisuke; Fujita, Takashi

2004-01-01

Recently, a sheet metal forming simulation has become an indispensable tool for developing a new model of an automobile part within a limited short period. In these days, the utilization of a springback calculation of the formed part has been increasing. However, only a few papers on the prediction of surface defects have been reported in spite of serious needs.In this paper, surface defects in the door outer panel, especially those around the door handle embossment, have been investigated. Applying an explicit solver to the forming simulation, and an implicit solver to the springback calculation, we have tried to evaluate surface defects in the panel. In order to improve the accuracy of the simulation, numerical tools have been modeled including the precise shape of the draw beads so that the draw bead effects on both the material flow and the restraint on the springback deformation have been considered. Compared with the actual panel shape, which shows apparent surface defects, the simulated result has closely predicted the above defects around the embossment.To demonstrate the applicability of our simulation, a few sensitivity analyses have been carried out, modifying forming conditions such as blank holder force. Each result has shown slight but distinctive differences in the cross section profile of the panel. As a result, it has been realized that the influence of each considered factor on surface defects is qualitatively consistent with our practical knowledge

Positron annihilation studies of defects in molecular beam epitaxy grown III-V layers

International Nuclear Information System (INIS)

Umlor, M.T.; Keeble, D.J.; Cooke, P.W.

1994-01-01

A summary of recent positron annihilation experiments on molecular beam epitaxy (MBE) grown III-V layers is Presented. Variable energy positron beam measurements on Al 0.32 Ga 0.68 As undoped and Si doped have been completed. Positron trapping at a open volume defect in Al 0.32 Ga 0.68 :Si for temperatures from 300 to 25 K in the dark was observed. The positron trap was lost after 1.3 eV illumination at 25K. These results indicate an open volume defect is associated with the local structure of the deep donor state of the DX center. Stability of MBE GaAs to thermal annealing war, investigated over the temperature range of 230 to 700 degrees C, Proximity wafer furnace anneals in flowing argon were used, Samples grown above 450 degrees C were shown to be stable but for sample below this temperature an anneal induced vacancy related defect was produced for anneals between 400 and 500 degrees C. The nature of the defect was shown to be different for material grown at 350 and 230 degrees C. Activation energies of 2.5 eV to 2.3 eV were obtained from isochronal anneal experiments for samples grown at 350 and 230 degrees C, respectively

Influence of growth temperature on bulk and surface defects in hybrid lead halide perovskite films

Science.gov (United States)

Peng, Weina; Anand, Benoy; Liu, Lihong; Sampat, Siddharth; Bearden, Brandon E.; Malko, Anton V.; Chabal, Yves J.

2016-01-01

The rapid development of perovskite solar cells has focused its attention on defects in perovskites, which are gradually realized to strongly control the device performance. A fundamental understanding is therefore needed for further improvement in this field. Recent efforts have mainly focused on minimizing the surface defects and grain boundaries in thin films. Using time-resolved photoluminescence spectroscopy, we show that bulk defects in perovskite samples prepared using vapor assisted solution process (VASP) play a key role in addition to surface and grain boundary defects. The defect state density of samples prepared at 150 °C (~1017 cm-3) increases by 5 fold at 175 °C even though the average grains size increases slightly, ruling out grain boundary defects as the main mechanism for the observed differences in PL properties upon annealing. Upon surface passivation using water molecules, the PL intensity and lifetime of samples prepared at 200 °C are only partially improved, remaining significantly lower than those prepared at 150 °C. Thus, the present study indicates that the majority of these defect states observed at elevated growth temperatures originates from bulk defects and underscores the importance to control the formation of bulk defects together with grain boundary and surface defects to further improve the optoelectronic properties of perovskites.The rapid development of perovskite solar cells has focused its attention on defects in perovskites, which are gradually realized to strongly control the device performance. A fundamental understanding is therefore needed for further improvement in this field. Recent efforts have mainly focused on minimizing the surface defects and grain boundaries in thin films. Using time-resolved photoluminescence spectroscopy, we show that bulk defects in perovskite samples prepared using vapor assisted solution process (VASP) play a key role in addition to surface and grain boundary defects. The defect state

A Simulation Model of Focus and Radial Servos in Compact Disc Players with Disc Surface Defects

DEFF Research Database (Denmark)

Odgaard, Peter Fogh; Stoustrup, Jakob; Andersen, Palle

2004-01-01

Compact Disc players have been on the market in more than two decades.As a consequence most of the control servo problems have been solved. A large remaining problem to solve is the handling of Compact Discs with severe surface defects like scratches and fingerprints. This paper introduces a method...... for making the design of controllers handling surface defects easier. A simulation model of Compact Disc players playing discs with surface defects is presented. The main novel element in the model is a model of the surface defects. That model is based on data from discs with surface defects. This model...

Deformation behaviour induced by point defects near a Cu(0 0 1) surface

International Nuclear Information System (INIS)

Said-Ettaoussi, M.; Jimenez-Saez, J.C.; Perez-Martin, A.M.C.; Jimenez-Rodriguez, J.J.

2004-01-01

In order to attain a satisfactory understanding of many of the properties of metallic surfaces, it is necessary to take into account the distorting effect of self-interstitials and vacancies. The present work is focused on the study of the behaviour of neighbouring atoms around point defects. The conjugate gradient method with an empiric many-body potential has been used to study the point defect-surface interaction. Point defects have been generated at several depths under a Cu(0 0 1) surface and then the whole system driven to the minimum energy state. The displacement field has been obtained in the vicinity to the defect. An energetic analysis is also carried out calculating formation and migration energies

Surface defects characterization in a quantum wire by coherent phonons scattering

Energy Technology Data Exchange (ETDEWEB)

Rabia, M. S. [Laboratoire de Mécanique des Structures et Energétique, Faculté du Génie de la Construction, Université. Mammeri de Tizi-Ouzou, BP 17 RP Hasnaoua II, Tizi-Ouzou 15000, Algérie m2msr@yahoo.fr (Algeria)

2015-03-30

The influence of surface defects on the scattering properties of elastic waves in a quasi-planar crystallographic waveguide is studied in the harmonic approximation using the matching method formalism. The structural model is based on three infinite atomic chains forming a perfect lattice surmounted by an atomic surface defect. Following the Landauer approach, we solve directly the Newton dynamical equation with scattering boundary conditions and taking into account the next nearest neighbour’s interaction. A detailed study of the defect-induced fluctuations in the transmission spectra is presented for different adatom masses. As in the electronic case, the presence of localized defect-induced states leads to Fano-like resonances. In the language of mechanical vibrations, these are called continuum resonances. Numerical results reveal the intimate relation between transmission spectra and localized defect states and provide a basis for the understanding of conductance spectroscopy experiments in disordered mesoscopic systems. The results could be useful for the design of phononic devices.

Surface defects characterization in a quantum wire by coherent phonons scattering

International Nuclear Information System (INIS)

Rabia, M. S.

2015-01-01

The influence of surface defects on the scattering properties of elastic waves in a quasi-planar crystallographic waveguide is studied in the harmonic approximation using the matching method formalism. The structural model is based on three infinite atomic chains forming a perfect lattice surmounted by an atomic surface defect. Following the Landauer approach, we solve directly the Newton dynamical equation with scattering boundary conditions and taking into account the next nearest neighbour’s interaction. A detailed study of the defect-induced fluctuations in the transmission spectra is presented for different adatom masses. As in the electronic case, the presence of localized defect-induced states leads to Fano-like resonances. In the language of mechanical vibrations, these are called continuum resonances. Numerical results reveal the intimate relation between transmission spectra and localized defect states and provide a basis for the understanding of conductance spectroscopy experiments in disordered mesoscopic systems. The results could be useful for the design of phononic devices

Real-time defect detection on highly reflective curved surfaces

Science.gov (United States)

Rosati, G.; Boschetti, G.; Biondi, A.; Rossi, A.

2009-03-01

This paper presents an automated defect detection system for coated plastic components for the automotive industry. This research activity came up as an evolution of a previous study which employed a non-flat mirror to illuminate and inspect high reflective curved surfaces. According to this method, the rays emitted from a light source are conveyed on the surface under investigation by means of a suitably curved mirror. After the reflection on the surface, the light rays are collected by a CCD camera, in which the coating defects appear as shadows of various shapes and dimensions. In this paper we present an evolution of the above-mentioned method, introducing a simplified mirror set-up in order to reduce the costs and the complexity of the defect detection system. In fact, a set of plane mirrors is employed instead of the curved one. Moreover, the inspection of multiple bend radius parts is investigated. A prototype of the machine vision system has been developed in order to test this simplified method. This device is made up of a light projector, a set of plane mirrors for light rays reflection, a conveyor belt for handling components, a CCD camera and a desktop PC which performs image acquisition and processing. Like in the previous system, the defects are identified as shadows inside a high brightness image. At the end of the paper, first experimental results are presented.

Suppression of surface barriers in superconductors by columnar defects

International Nuclear Information System (INIS)

Koshelev, A. E.; Vinokur, V. M.

2001-01-01

We investigate the influence of columnar defects in layered superconductors on the thermally activated penetration of pancake vortices through the surface barrier. Columnar defects, located near the surface, facilitate penetration of vortices through the surface barrier, by creating ''weak spots,'' through which pancakes can penetrate into the superconductor. Penetration of a pancake mediated by an isolated column, located near the surface, is a two-stage process involving hopping from the surface to the column and the detachment from the column into the bulk; each stage is controlled by its own activation barrier. The resulting effective energy is equal to the maximum of those two barriers. For a given external field there exists an optimum location of the column for which the barriers for the both processes are equal and the reduction of the effective penetration barrier is maximal. At high fields the effective penetration field is approximately 2 times smaller than in unirradiated samples. We also estimate the suppression of the effective penetration field by column clusters. This mechanism provides further reduction of the penetration field at low temperatures

Optical properties of GaSb(001)-c(2 x 6): The role of surface antisite defects

Energy Technology Data Exchange (ETDEWEB)

Hogan, Conor; Del Sole, Rodolfo [Department of Physics, CNR-INFM-SMC, Roma (Italy); European Theoretical Spectroscopy Facility (ETSF), University of Rome ' ' Tor Vergata' ' , Roma (Italy); Magri, Rita [Centro S3-CNR-Istituto di Nanoscienze, Modena (Italy); Department of Physics, University of Modena and Reggio Emilia, Modena (Italy)

2010-08-15

We consider the formation of surface antisite defects on a previously proposed model for the GaSb(001)-c(2 x 6) surface. Based on ab initio total energy calculations, we show how these defects stabilize the otherwise metallic surface and how their formation is driven by the excess charge associated with the Sb-rich surface conditions. The surface-sensitive optical technique of reflectance anisotropy spectroscopy is shown to be crucial for detecting the defects, and computation of spectra yields a good agreement with experiment when defects are included in the surface reconstruction. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

A study of the mechanisms causing surface defects on sidewalls during Si etching for TSV (through Si via)

International Nuclear Information System (INIS)

Choi, Jae Woong; Loh, Woon Leng; Praveen, Sampath Kumar; Murphy, Ramana; Swee, Eugene Tan Kiat

2013-01-01

In this paper we report three mechanisms causing surface defects on Si sidewalls during Si etching for TSV. The first mechanism causing surface defects was a downward surface-defect formation due to the participation of the residual polymerizing gas in the transition periods between passivation steps and etch steps. The second mechanism was an upward surface-defect formation due to etchant attacking the interface between the Si and the sidewall polymer. Although the sidewall polymer was thick enough to protect the Si surface, it was not possible to avoid surface defects if the etch step was not switched to the following passivation step in time. The third mechanism was a sponge-like surface-defect formation caused by either poor polymer depositions or voids inside the sidewall polymer. The sponge-like surface defects were formed by Si isotropic etching through the weak points of the sidewall polymer. All three surface defects were considered as the major factors on TSV integration and packaging reliability issues. (paper)

Fabrication of a bionic microstructure on a C/SiC brake lining surface: Positive applications of surface defects for surface wetting control

Science.gov (United States)

Wu, M. L.; Ren, C. Z.; Xu, H. Z.; Zhou, C. L.

2018-05-01

The material removal processes generate interesting surface topographies, unfortunately, that was usually considered to be surface defects. To date, little attention has been devoted to the positive applications of these interesting surface defects resulted from laser ablation to improve C/SiC surface wettability. In this study, the formation mechanism behind surface defects (residual particles) is discussed first. The results showed that the residual particles with various diameters experienced regeneration and migration, causing them to accumulate repeatedly. The effective accumulation of these residual particles with various diameters provides a new method about fabricating bionic microstructures for surface wetting control. The negligible influence of ablation processes on the chemical component of the subsurface was studied by comparing the C-O-Si weight percentage at the C/SiC subsurface. A group of microstructures were fabricated under different laser trace and different laser parameters. Surface wettability experimental results for different types of microstructures were compared. The results showed that the surface wettability increased as the laser scanning speed decreased. The surface wettability increased with the density of the laser scanning trace. We also demonstrated the application of optimized combination of laser parameters and laser trace to simulate a lotus leaf's microstructure on C/SiC surfaces. The parameter selection depends on the specific material properties.

Surface modification effects on defect-related photoluminescence in colloidal CdS quantum dots.

Science.gov (United States)

Lee, TaeGi; Shimura, Kunio; Kim, DaeGwi

2018-05-03

We investigated the effects of surface modification on the defect-related photoluminescence (PL) band in colloidal CdS quantum dots (QDs). A size-selective photoetching process and a surface modification technique with a Cd(OH)2 layer enabled the preparation of size-controlled CdS QDs with high PL efficiency. The Stokes shift of the defect-related PL band before and after the surface modification was ∼1.0 eV and ∼0.63 eV, respectively. This difference in the Stokes shifts suggests that the origin of the defect-related PL band was changed by the surface modification. Analysis by X-ray photoelectron spectroscopy revealed that the surface of the CdS QDs before and after the surface modification was S rich and Cd rich, respectively. These results suggest that Cd-vacancy acceptors and S-vacancy donors affect PL processes in CdS QDs before and after the surface modification, respectively.

Structure of metal-rich (001) surfaces of III-V compound semiconductors

DEFF Research Database (Denmark)

Kumpf, C.; Smilgies, D.; Landemark, E.

2001-01-01

The atomic structure of the group-III-rich surface of III-V semiconductor compounds has been under intense debate for many years, yet none of the models agrees with the experimental data available. Here we present a model for the three-dimensional structure of the (001)-c(8x2) reconstruction on In......(8 x 2) reconstructions of III-V semiconductor surfaces contain the same essential building blocks....

Digital detection system of surface defects for large aperture optical elements

International Nuclear Information System (INIS)

Fan Yong; Chen Niannian; Gao Lingling; Jia Yuan; Wang Junbo; Cheng Xiaofeng

2009-01-01

Based on the light defect images against the dark background in a scattering imaging system, a digital detection system of surface defects for large aperture optical elements has been presented. In the system, the image is segmented by a multi-area self-adaptive threshold segmentation method, then a pixel labeling method based on replacing arrays is adopted to extract defect features quickly, and at last the defects are classified through back-propagation neural networks. Experiment results show that the system can achieve real-time detection and classification. (authors)

A fast button surface defects detection method based on convolutional neural network

Science.gov (United States)

Liu, Lizhe; Cao, Danhua; Wu, Songlin; Wu, Yubin; Wei, Taoran

2018-01-01

Considering the complexity of the button surface texture and the variety of buttons and defects, we propose a fast visual method for button surface defect detection, based on convolutional neural network (CNN). CNN has the ability to extract the essential features by training, avoiding designing complex feature operators adapted to different kinds of buttons, textures and defects. Firstly, we obtain the normalized button region and then use HOG-SVM method to identify the front and back side of the button. Finally, a convolutional neural network is developed to recognize the defects. Aiming at detecting the subtle defects, we propose a network structure with multiple feature channels input. To deal with the defects of different scales, we take a strategy of multi-scale image block detection. The experimental results show that our method is valid for a variety of buttons and able to recognize all kinds of defects that have occurred, including dent, crack, stain, hole, wrong paint and uneven. The detection rate exceeds 96%, which is much better than traditional methods based on SVM and methods based on template match. Our method can reach the speed of 5 fps on DSP based smart camera with 600 MHz frequency.

The effect of bulk/surface defects ratio change on the photocatalysis of TiO_2 nanosheet film

International Nuclear Information System (INIS)

Wang, Fangfang; Ge, Wenna; Shen, Tong; Ye, Bangjiao; Fu, Zhengping; Lu, Yalin

2017-01-01

Highlights: • The defect behaviors of TiO_2 nanosheet array films were studied by positron annihilation spectroscopy. • Different bulk/surface defect ratios were realized by annealing at different temperature. • It was concluded that bulk defects are mainly Ti"3"+ vacancy defects. • The separation efficiency of photogenerated electrons and holes could be significantly improved by optimizing the bulk/surface defects ratio. - Abstract: The photocatalysis behavior of TiO_2 nanosheet array films was studied, in which the ratio of bulk/surface defects were adjusted by annealing at different temperature. Combining positron annihilation spectroscopy, EPR and XPS, we concluded that the bulk defects belonged to Ti"3"+ related vacancy defects. The results show that the separation efficiency of photogenerated electrons and holes could be significantly improved by optimizing the bulk/surface defects ratio of TiO_2 nanosheet films, and in turn enhancing the photocatalysis behaviors.

Analysis of gold(I/III)-complexes by HPLC-ICP-MS demonstrates gold(III) stability in surface waters.

Science.gov (United States)

Ta, Christine; Reith, Frank; Brugger, Joël; Pring, Allan; Lenehan, Claire E

2014-05-20

Understanding the form in which gold is transported in surface- and groundwaters underpins our understanding of gold dispersion and (bio)geochemical cycling. Yet, to date, there are no direct techniques capable of identifying the oxidation state and complexation of gold in natural waters. We present a reversed phase ion-pairing HPLC-ICP-MS method for the separation and determination of aqueous gold(III)-chloro-hydroxyl, gold(III)-bromo-hydroxyl, gold(I)-thiosulfate, and gold(I)-cyanide complexes. Detection limits for the gold species range from 0.05 to 0.30 μg L(-1). The [Au(CN)2](-) gold cyanide complex was detected in five of six waters from tailings and adjacent monitoring bores of working gold mines. Contrary to thermodynamic predictions, evidence was obtained for the existence of Au(III)-complexes in circumneutral, hypersaline waters of a natural lake overlying a gold deposit in Western Australia. This first direct evidence for the existence and stability of Au(III)-complexes in natural surface waters suggests that Au(III)-complexes may be important for the transport and biogeochemical cycling of gold in surface environments. Overall, these results show that near-μg L(-1) enrichments of Au in environmental waters result from metastable ligands (e.g., CN(-)) as well as kinetically controlled redox processes leading to the stability of highly soluble Au(III)-complexes.

Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

Science.gov (United States)

Gorai, Prashun; Seebauer, Edmund G.

2014-07-01

The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

International Nuclear Information System (INIS)

Gorai, Prashun; Seebauer, Edmund G.

2014-01-01

The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO 2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

Point defects in dilute nitride III-N-As and III-N-P

International Nuclear Information System (INIS)

Chen, W.M.; Buyanova, I.A.; Tu, C.W.; Yonezu, H.

2006-01-01

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As Ga antisites and Ga i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides

Surface defect modification of ZnO quantum dots based on rare earth acetylacetonate and their impacts on optical performance

Energy Technology Data Exchange (ETDEWEB)

Wang, Lixi, E-mail: wanglixi_njut@163.com [School of Materials Science and Engineering, Nanjing Tech University, Nanjing, 210009, Jiangsu (China); Jiangsu Collaboration Innovation Center for Advanced Inorganic Function Composites, Nanjing, 210009, Jiangsu (China); Yang, Xiaojuan; Yang, Weimin [School of Materials Science and Engineering, Nanjing Tech University, Nanjing, 210009, Jiangsu (China); Jiangsu Collaboration Innovation Center for Advanced Inorganic Function Composites, Nanjing, 210009, Jiangsu (China); Zhang, Jing [China Geol Survey, Nanjing Ctr, Nanjing, 210016, Jiangsu (China); Zhang, Qitu [School of Materials Science and Engineering, Nanjing Tech University, Nanjing, 210009, Jiangsu (China); Jiangsu Collaboration Innovation Center for Advanced Inorganic Function Composites, Nanjing, 210009, Jiangsu (China); Song, Bo; Wong, Chingping [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, 30332, GA (United States)

2017-03-15

Graphical abstract: RE(AcAc){sub 3} (RE = Ce, Dy and Tb) can realize the defects modification of ZnO QDs based on the linkage occurs between the protons of the hydroxyl groups on the surface of ZnO QDs and the π–system of acetylacetone. The color coordinate could be shifted among yellow-green, blue-green, and green region by changing the RE (AcAc){sub 3} ratios. The stable Ce(AcAc){sub 3}/ZnO QDs with average sizes of about 3.0 nm can be obtained. The calculated band gap data also proved the efficient modification of Ce(AcAc){sub 3} for ZnO QDs with the largest variation of band gap energy of 0.039 eV (from 3.583 eV to 3.544 eV). - Highlights: • Defects modification of ZnO QDs based on rare earth acetylacetonate. • Stable Ce(AcAc){sub 3}/ZnO QDs with an average sizes of about 3.0 nm. • The color coordinate could be shifted among yellow-green, blue-green, and green region by changing the RE (AcAc){sub 3} ratios. - Abstract: The surface defect modification has an important effect on the application of ZnO quantum dots, and it has gained much progress in recently years, propelled by the development of additives. Our research efforts are directed toward developing a new surface modification additive RE(AcAc){sub 3} (RE = Ce, Dy, Tb) to achieve fine ZnO QDs and adjust their surface properties. RE(AcAc){sub 3}/ZnO QDs nanostructured materials have been designed and prepared, and particular emphasis has been given to the relation between the surface modification and optical properties. The effects of RE(III) acetylacetonate modification on the FT-IR, TEM images and photoluminescence (PL) spectra were investigated, and the surface defect modification principle and effect were discussed in details. The band gap (E{sub g}) was also calculated to prove the surface modification effect. For the RE(AcAc){sub 3}/ZnO QDs complex materials, stable linkage occurs because of the affinity of −COOH from acetylacetonate anionic ligand to zinc oxide surfaces, with attachment

ABOUT RATIONING MAXIMUM ALLOWABLE DEFECT DEPTH ON THE SURFACE OF STEEL BILLETS IN PRODUCTION OF HOT-ROLLED STEEL

Directory of Open Access Journals (Sweden)

PARUSOV E. V.

2017-01-01

Full Text Available Formulation of the problem. Significant influence on the quality of rolled steel have various defects on its surface, which in its turn inherited from surface defects of billet and possible damage to the surface of rolled steel in the rolling mill line. One of the criteria for assessing the quality indicators of rolled steel is rationing of surface defects [1; 2; 3; 6; 7]. Current status of the issue. Analyzing the different requirements of regulations to the surface quality of the rolled high-carbon steels, we can conclude that the maximum allowable depth of defects on the surface of billet should be in the range of 2.0...5.0 mm (depending on the section of the billet, method of its production and further the destination Purpose. Develop a methodology for calculating the maximum allowable depth of defects on the steel billet surface depending on the requirements placed on the surface quality of hot-rolled steel. Results. A simplified method of calculation, allowing at the rated depth of defects on the surface of the hot-rolled steel to make operatively calculation of the maximum allowable depth of surface defects of steel billets before heating the metal in the heat deformation was developed. The findings shows that the maximum allowable depth of surface defects is reduced with increasing diameter rolled steel, reducing the initial section steel billet and degrees of oxidation of the metal in the heating furnace.

Prosthetic rehabilitation of severe Siebert′s Class III defect with modified Andrews bridge system

Directory of Open Access Journals (Sweden)

Manu Rathee

2015-01-01

Full Text Available Prosthetic dentistry involves the replacement of missing and contiguous tissues with artificial substitutes to restore and maintain the oral functions, appearance, and health of the patient. The treatment of edentulous areas with ridge defects poses a challenging task for the dentist. Management of such cases involves a wide range of treatment options comprising mainly of surgical interventions and non surgical techniques such as use of removable, fixed or fixed- removable partial dentures. But each treatment plan undertaken should be customized according to patient needs. A variety of factors such as quality and quantity of existing contiguous hard and soft tissues, systemic condition and economic status of the patient play an important role in treatment planning, clinical outcome and prognosis. This case report presents the restoration of a Seibert′s Class III ridge defect by an economical modification of Andrews Bridge in a 32 Year old patient.

Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

KAUST Repository

Chroneos, Alexander I.; Schwingenschlö gl, Udo; Dimoulas, Athanasios Dimoulas

2012-01-01

in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices

Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

Science.gov (United States)

Rousseau, Ian; Callsen, Gordon; Jacopin, Gwénolé; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas

2018-03-01

III-nitride surface states are expected to impact high surface-to-volume ratio devices, such as nano- and micro-wire light-emitting diodes, transistors, and photonic integrated circuits. In this work, reversible photoinduced oxygen desorption from III-nitride microdisk resonator surfaces is shown to increase optical attenuation of whispering gallery modes by 100 cm-1 at λ = 450 nm. Comparison of photoinduced oxygen desorption in unintentionally and n+-doped microdisks suggests that the spectral changes originate from the unpinning of the surface Fermi level, likely taking place at etched nonpolar III-nitride sidewalls. An oxygen-rich surface prepared by thermal annealing results in a broadband Q improvement to state-of-the-art values exceeding 1 × 104 at 2.6 eV. Such findings emphasize the importance of optically active surface states and their passivation for future nanoscale III-nitride optoelectronic and photonic devices.

3D modeling of missing pellet surface defects in BWR fuel

Energy Technology Data Exchange (ETDEWEB)

Spencer, B.W., E-mail: Benjamin.Spencer@inl.gov; Williamson, R.L.; Stafford, D.S.; Novascone, S.R.; Hales, J.D.; Pastore, G.

2016-10-15

Highlights: • A global/local analysis procedure for missing pellet surface defects is proposed. • This is applied to defective BWR fuel under blade withdrawal and high power ramp conditions. • Sensitivity of the cladding response to key model parameters is studied. - Abstract: One of the important roles of cladding in light water reactor fuel rods is to prevent the release of fission products. To that end, it is essential that the cladding maintain its integrity under a variety of thermal and mechanical loading conditions. Local geometric irregularities in fuel pellets caused by manufacturing defects known as missing pellet surfaces (MPS) can in some circumstances lead to elevated cladding stresses that are sufficiently high to cause cladding failure. Accurate modeling of these defects can help prevent these types of failures. The BISON nuclear fuel performance code developed at Idaho National Laboratory can be used to simulate the global thermo-mechanical fuel rod behavior, as well as the local response of regions of interest, in either 2D or 3D. In either case, a full set of models to represent the thermal and mechanical properties of the fuel, cladding and plenum gas is employed. A procedure for coupling 2D full-length fuel rod models to detailed 3D models of the region of the rod containing a MPS defect is detailed here. The global and local model each contain appropriate physics and behavior models for nuclear fuel. This procedure is demonstrated on a simulation of a boiling water reactor (BWR) fuel rod containing a pellet with an MPS defect, subjected to a variety of transient events, including a control blade withdrawal and a ramp to high power. The importance of modeling the local defect using a 3D model is highlighted by comparing 3D and 2D representations of the defective pellet region. Parametric studies demonstrate the effects of the choice of gaseous swelling model and of the depth and geometry of the MPS defect on the response of the cladding

III-V nanoelectronics and related surface/interface issues

International Nuclear Information System (INIS)

Hasegawa, Hideki

2003-01-01

The conventional logic gate architecture is not suitable for high-density integration of quantum devices which are non-robust and extremely structure- and charge-sensitive. In this paper, our novel hexagonal binary-decision-diagram (BDD) quantum circuit approach for III-V nanoelectronics is reviewed and related critical surface/interface issues for high-density integration are discussed. First, the basic concept and actual implementation method of our approach are explained, giving examples of novel BDD quantum integrated circuits where nanowire networks are controlled by nanoscale Schottky wrap gates. For high-density integration, growth of embedded sub-10 nm III-V quantum wire networks by selective molecular beam epitaxy (MBE) on patterned substrates is described, including effects of atomic hydrogen irradiation and kinetic control of wire width. The key processing issue lies in understanding and control of nanostructure surfaces/interfaces. Behavior of nanoscale Schottky gates, recent scanning tunneling microscopy (STM)/scanning tunneling spectroscopy (STS) studies of surface states, and successful removal of surface states by MBE-grown silicon interface control layer are discussed

The effect of bulk/surface defects ratio change on the photocatalysis of TiO{sub 2} nanosheet film

Energy Technology Data Exchange (ETDEWEB)

Wang, Fangfang [CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 (China); Ge, Wenna [State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei 230026 (China); Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China); Shen, Tong [CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 (China); Ye, Bangjiao [State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei 230026 (China); Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China); Fu, Zhengping, E-mail: fuzp@ustc.edu.cn [CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 (China); Lu, Yalin, E-mail: yllu@ustc.edu.cn [CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 (China); Synergetic Innovation Center of Quantum Information & Stop Quantum Physics, University of Science and Technology of China, Hefei 230026 (China); National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, Anhui (China)

2017-07-15

Highlights: • The defect behaviors of TiO{sub 2} nanosheet array films were studied by positron annihilation spectroscopy. • Different bulk/surface defect ratios were realized by annealing at different temperature. • It was concluded that bulk defects are mainly Ti{sup 3+} vacancy defects. • The separation efficiency of photogenerated electrons and holes could be significantly improved by optimizing the bulk/surface defects ratio. - Abstract: The photocatalysis behavior of TiO{sub 2} nanosheet array films was studied, in which the ratio of bulk/surface defects were adjusted by annealing at different temperature. Combining positron annihilation spectroscopy, EPR and XPS, we concluded that the bulk defects belonged to Ti{sup 3+} related vacancy defects. The results show that the separation efficiency of photogenerated electrons and holes could be significantly improved by optimizing the bulk/surface defects ratio of TiO{sub 2} nanosheet films, and in turn enhancing the photocatalysis behaviors.

Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

KAUST Repository

Chroneos, Alexander I.

2012-01-26

In recent years germanium has been emerging as a mainstream material that could have important applications in the microelectronics industry. The principle aim of this study is to review investigations of the diffusion of technologically important p- and n-type dopants as well as surface and interface passivation issues in germanium. The diffusion of impurities in germanium is interrelated to the formation of clusters whenever possible, and possibilities for point defect engineering are discussed in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Inspecting rapidly moving surfaces for small defects using CNN cameras

Science.gov (United States)

Blug, Andreas; Carl, Daniel; Höfler, Heinrich

2013-04-01

A continuous increase in production speed and manufacturing precision raises a demand for the automated detection of small image features on rapidly moving surfaces. An example are wire drawing processes where kilometers of cylindrical metal surfaces moving with 10 m/s have to be inspected for defects such as scratches, dents, grooves, or chatter marks with a lateral size of 100 μm in real time. Up to now, complex eddy current systems are used for quality control instead of line cameras, because the ratio between lateral feature size and surface speed is limited by the data transport between camera and computer. This bottleneck is avoided by "cellular neural network" (CNN) cameras which enable image processing directly on the camera chip. This article reports results achieved with a demonstrator based on this novel analogue camera - computer system. The results show that computational speed and accuracy of the analogue computer system are sufficient to detect and discriminate the different types of defects. Area images with 176 x 144 pixels are acquired and evaluated in real time with frame rates of 4 to 10 kHz - depending on the number of defects to be detected. These frame rates correspond to equivalent line rates on line cameras between 360 and 880 kHz, a number far beyond the available features. Using the relation between lateral feature size and surface speed as a figure of merit, the CNN based system outperforms conventional image processing systems by an order of magnitude.

On the origin and elimination of macroscopic defects in MBE films

Science.gov (United States)

Wood, C. E. C.; Rathbun, L.; Ohno, H.; DeSimone, D.

1981-02-01

Spitting of group III metal droplets from Knudsen type effusion cells has been found culpable for a genre of problematical macroscopic surface topographical defects observed in the growth of semiconductor films by molecular beam epitaxy. Successful precautions are described which virtually eliminate the problem.

Sorption behavior of europium(III) and curium(III) on the cell surfaces of microorganisms

International Nuclear Information System (INIS)

Ozaki, T.; Kimura, T.; Ohnuki, T.; Yoshida, Z.; Gillow, J.B.; Francis, A.J.

2004-01-01

We investigated the association of europium(III) and curium(III) with the microorganisms Chlorella vulgaris, Bacillus subtilis, Pseudomonas fluorescens, Halomonas sp., Halobacterium salinarum, and Halobacterium halobium. We determined the kinetics and distribution coefficients (K d ) for Eu(III) and Cm(III) sorption at pH 3-5 by batch experiments, and evaluated the number of water molecules in the inner-sphere (N H 2 O ) and the degree of strength of ligand field (R E/M ) for Eu(III) by time-resolved laser-induced fluorescence spectroscopy (TRLFS). Exudates from C. vulgaris, Halomonas sp., and H. halobium had an affinity for Eu(III) and Cm(III). The log K d of Eu(III) and Cm(III) showed that their sorption was not fully due to the exchange with three protons on the functional groups on cell surfaces. The halophilic microorganisms (Halomonas sp., Halobacterium salinarum, H. halobium) showed almost no pH dependence in log K d , indicating that an exchange with Na + on the functional groups was involved in their sorption. The ΔN H 2 O (= 9 - N H 2 O ) for Eu(III) on C. vulgaris was 1-3, while that for the other microorganisms was over 3, demonstrating that the coordination of Eu(III) with C. vulgaris was predominantly an outer-spherical process. The R E/M for Eu(III) on halophilic microorganisms was 2.5-5, while that for non-halophilic ones was 1-2.5. This finding suggests that the coordination environment of Eu(III) on the halophilic microorganisms is more complicated than that on the other three non-halophilic ones. (orig.)

Sorption behavior of europium(III) and curium(III) on the cell surfaces of microorganisms

Energy Technology Data Exchange (ETDEWEB)

Ozaki, T.; Kimura, T.; Ohnuki, T.; Yoshida, Z. [Advanced Science Research Center, Japan Atomic Energy Research Inst., Ibaraki (Japan); Gillow, J.B.; Francis, A.J. [Environmental Sciences Dept., Brookhaven National Lab., Upton, NY (United States)

2004-07-01

We investigated the association of europium(III) and curium(III) with the microorganisms Chlorella vulgaris, Bacillus subtilis, Pseudomonas fluorescens, Halomonas sp., Halobacterium salinarum, and Halobacterium halobium. We determined the kinetics and distribution coefficients (K{sub d}) for Eu(III) and Cm(III) sorption at pH 3-5 by batch experiments, and evaluated the number of water molecules in the inner-sphere (N{sub H{sub 2}O}) and the degree of strength of ligand field (R{sub E/M}) for Eu(III) by time-resolved laser-induced fluorescence spectroscopy (TRLFS). Exudates from C. vulgaris, Halomonas sp., and H. halobium had an affinity for Eu(III) and Cm(III). The log K{sub d} of Eu(III) and Cm(III) showed that their sorption was not fully due to the exchange with three protons on the functional groups on cell surfaces. The halophilic microorganisms (Halomonas sp., Halobacterium salinarum, H. halobium) showed almost no pH dependence in log K{sub d}, indicating that an exchange with Na{sup +} on the functional groups was involved in their sorption. The {delta}N{sub H{sub 2}O} (= 9 - N{sub H{sub 2}O}) for Eu(III) on C. vulgaris was 1-3, while that for the other microorganisms was over 3, demonstrating that the coordination of Eu(III) with C. vulgaris was predominantly an outer-spherical process. The R{sub E/M} for Eu(III) on halophilic microorganisms was 2.5-5, while that for non-halophilic ones was 1-2.5. This finding suggests that the coordination environment of Eu(III) on the halophilic microorganisms is more complicated than that on the other three non-halophilic ones. (orig.)

Localised surface plasmon-like resonance generated by microwave electromagnetic waves in pipe defects

Science.gov (United States)

Alobaidi, Wissam M.; Nima, Zeid A.; Sandgren, Eric

2018-01-01

Localised surface plasmon (LSP)-like resonance phenomena were simulated in COMSOL Multiphysics™, and the electric field enhancement was evaluated in eight pipe defects using the microwave band from 1.80 to 3.00 GHz and analysed by finite element analysis (FEA). The simulation was carried out, in each defect case, on a pipe that has 762 mm length and 152.4 mm inner diameter, and 12.7 mm pipe wall thickness. Defects were positioned in the middle of the pipe and were named as follows; SD: Square Defect, FCD: fillet corner defect, FD: fillet defect, HCD: half circle defect, TCD: triangle corner defect, TD: triangle defect, ZD: zigzag defect, GD: gear defect. The LSP electric field, and scattering parametric (S21, and S11) waves were evaluated in all cases and found to be strongly dependent on the size and the shape of the defect rather than the pipe and or the medium materials.

Various categories of defects after surface alloying induced by high current pulsed electron beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Luo, Dian [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Tang, Guangze, E-mail: oaktang@hit.edu.cn [School of Material Science & Engineering, Harbin Institute of Technology, Harbin 150001 (China); Ma, Xinxin [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Gu, Le [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Sun, Mingren [School of Material Science & Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wang, Liqin [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China)

2015-10-01

Highlights: • Four kinds of defects are found during surface alloying by high current electron beam. • Exploring the mechanism how these defects appear after irradiation. • Increasing pulsing cycles will help to get good surface quality. • Choosing proper energy density will increase surface quality. - Abstract: High current pulsed electron beam (HCPEB) is an attractive advanced materials processing method which could highly increase the mechanical properties and corrosion resistance. However, how to eliminate different kinds of defects during irradiation by HCPEB especially in condition of adding new elements is a challenging task. In the present research, the titanium and TaNb-TiW composite films was deposited on the carburizing steel (SAE9310 steel) by DC magnetron sputtering before irradiation. The process of surface alloying was induced by HCPEB with pulse duration of 2.5 μs and energy density ranging from 3 to 9 J/cm{sup 2}. Investigation of the microstructure indicated that there were several forms of defects after irradiation, such as surface unwetting, surface eruption, micro-cracks and layering. How the defects formed was explained by the results of electron microscopy and energy dispersive spectroscopy. The results also revealed that proper energy density (∼6 J/cm{sup 2}) and multi-number of irradiation (≥50 times) contributed to high quality of alloyed layers after irradiation.

Fracture Resistance, Surface Defects and Structural Strength of Glass

NARCIS (Netherlands)

Rodichev, Y.M.; Veer, F.A.

2010-01-01

This paper poses the theory that the fracture resistance of basic float glass is dependent on it physicochemical properties and the surface defects fonned under the float glass production, glass processing and handling at the service conditions compose the aggregate basis for structural glass

Surface Defects in Sheet Metal Forming: a Simulative Laboratory Device and Comparison with FE Analysis

Science.gov (United States)

Thuillier, Sandrine; Le Port, Alban; Manach, Pierre-Yves

2011-08-01

Surface defects are small concave imperfections that can develop during forming on outer convex panels of automotive parts like doors. They occur during springback steps, after drawing in the vicinity of bending over a curved line and flanging/hemming in the vicinity of the upper corner of a door. They can alter significantly the final quality of the automobile and it is of primary importance to deal with them as early as possible in the design of the forming tools. The aim of this work is to reproduce at the laboratory scale such a defect, in the case of the flanging along a curved edge, made of two orthogonal straight part of length 50 mm and joint by a curved line. A dedicated device has been designed and steel samples were tested. Each sample was measured initially (after laser cutting) and after flanging, with a 3D measuring machine. 2D profiles were extracted and the curvature was calculated. Surface defects were defined between points where the curvature sign changed. Isovalues of surface defect depth could then be plotted, thus displaying also the spatial geometry on the part surface. An experimental database has been created on the influence of process parameters like the flanging height and the flanging radius. Numerical simulations have been performed with the finite element code Abaqus to predict the occurrence of such surface defects and to analyze stress and strain distribution within the defect area.

Fundamental aspects on ion-beam surface modification: defect production and migration processes

International Nuclear Information System (INIS)

Rehn, L.E.; Averback, R.S.; Okamoto, P.R.

1984-09-01

Ion-beam modification of metals is generating increasing scientific interest not only because it has exciting technological potential, but also because it has raised fundamental questions concerning radiation-induced diffusion processes. In addition to the implanted species, several defect production and migration mechanisms contribute to changes in the near-surface composition of an alloy during ion bombardment, e.g., atoms exchange positions via displacements and replacement sequences; preferential sputtering effects arise; radiation-enhanced diffusion and radiation-induced segregation occur. The latter two defect migration mechanisms are of particular significance since they can alter the composition to depths which are much greater than the implanted ion range. By altering various parameters such as irradiation temperature, ion mass, energy, and current density, and initial alloying distributions, a rich variety of near-surface composition profiles can be created. We have utilized changes in ion mass and energy, and irradiation temperature to distinguish defect production from defect migration effects. Experimental results are presented which provide a guide to the relative efficiencies of different mechanisms under various irradiation conditions. 46 references

Detection of Surface Defects and Servo Signal Restoration for a Compact Disc Player

DEFF Research Database (Denmark)

Odgaard, Peter Fogh; Stoustrup, Jakob; Andersen, Palle

2006-01-01

Compact disc (CD) players have been on the market for more than two decades, and the involved technologies, including control are very mature. Some problems, however, still remain with respect to playing CDs having to surface defects like scratches and fingerprints. Two servo control loops are used...... to keep the optical pick-up unit (OPU) focused and radially locked to the information track of the CD. The problem is to design servo controllers which are well suited for both handling surface defects and disturbances like mechanical shocks. The handling of surface defects requires a low-controller...... bandwidth which is in conflict with the requirement for the handling of disturbances. This control problem can be solved by the use of a fault tolerant control strategy, where the fault detection is very important. The OPU feeds the controllers with detector signals. Based on these, focus and radial...

Defects in oxide surfaces studied by atomic force and scanning tunneling microscopy

Directory of Open Access Journals (Sweden)

Thomas König

2011-01-01

Full Text Available Surfaces of thin oxide films were investigated by means of a dual mode NC-AFM/STM. Apart from imaging the surface termination by NC-AFM with atomic resolution, point defects in magnesium oxide on Ag(001 and line defects in aluminum oxide on NiAl(110, respectively, were thoroughly studied. The contact potential was determined by Kelvin probe force microscopy (KPFM and the electronic structure by scanning tunneling spectroscopy (STS. On magnesium oxide, different color centers, i.e., F0, F+, F2+ and divacancies, have different effects on the contact potential. These differences enabled classification and unambiguous differentiation by KPFM. True atomic resolution shows the topography at line defects in aluminum oxide. At these domain boundaries, STS and KPFM verify F2+-like centers, which have been predicted by density functional theory calculations. Thus, by determining the contact potential and the electronic structure with a spatial resolution in the nanometer range, NC-AFM and STM can be successfully applied on thin oxide films beyond imaging the topography of the surface atoms.

Polyaniline hybridized surface defective ZnO nanorods with long-term stable photoelectrochemical activity

International Nuclear Information System (INIS)

Bera, Susanta; Khan, Hasmat; Biswas, Indranil; Jana, Sunirmal

2016-01-01

Highlights: • Polyaniline (PANI) hybridized ZnO nanorods was synthesized by solution method. • Surface defects were found in the nanorods. • The hybrid material exhibited an enhancement in visible light absorption. • A long-term stable photoelectrochemical activity of the material was found. • Advancement in the properties would be PANI hybridization and surface defects. - Abstract: We report surfactant/template free precursor solution based synthesis of polyaniline (PANI) hybridized surface defective ZnO nanorods by a two-step process. Initially, ZnO nanorods have been prepared at 95 °C, followed by hybridization (coating) of PANI onto the ZnO via in situ polymerization of aniline monomer, forming ZnO-PANI nanohybrid (ZP). The structural properties of ZP have been analyzed by X-ray diffraction (XRD) and transmission electron microscopic (TEM) studies. The presence of surface defects especially the oxygen vacancies in ZnO has been characterized by photoluminescence emission, high resolution TEM, X-ray photoelectron spectroscopy (XPS) and micro-Raman spectral measurements. The chemical interaction of PANI with ZnO has been examined by Fourier transform infrared (FTIR) and XPS analyses. A significant enhancement in visible absorption of ZP sample is found as evidenced from UV–vis diffused reflectance spectral study. BET nitrogen adsorption-desorption isotherm shows an improved textural property (pore size, pore volume) of ZP. Moreover, a long-term stable photoelectrochemical activity (PEC) of ZP is found compare to pristine ZnO. The synergic effect of PANI hybridization and the presence of surface defects in ZnO NRs can enhance the PEC by prolonging the recombination rate of photogenerated charge carriers. The effect can also provide large number of active sites to make electrolyte diffusion and mass transportation easier in the nanohybrid. This simple synthesis strategy can be adopted for PANI hybridization with different metal oxide semiconductors

Polyaniline hybridized surface defective ZnO nanorods with long-term stable photoelectrochemical activity

Energy Technology Data Exchange (ETDEWEB)

Bera, Susanta; Khan, Hasmat [Sol-Gel Division, CSIR-Central Glass and Ceramic Research Institute (CSIR-CGCRI), 196 Raja S.C. Mullick Road, P.O. Jadavpur University, Kolkata 700 032, West Bengal (India); Biswas, Indranil [Materials Characterization and Instrumentation Division, CSIR-Central Glass and Ceramic Research Institute (CSIR-CGCRI), 196 Raja S.C. Mullick Road, P.O. Jadavpur University, Kolkata 700 032, West Bengal (India); Jana, Sunirmal, E-mail: sjana@cgcri.res.in [Sol-Gel Division, CSIR-Central Glass and Ceramic Research Institute (CSIR-CGCRI), 196 Raja S.C. Mullick Road, P.O. Jadavpur University, Kolkata 700 032, West Bengal (India)

2016-10-15

Highlights: • Polyaniline (PANI) hybridized ZnO nanorods was synthesized by solution method. • Surface defects were found in the nanorods. • The hybrid material exhibited an enhancement in visible light absorption. • A long-term stable photoelectrochemical activity of the material was found. • Advancement in the properties would be PANI hybridization and surface defects. - Abstract: We report surfactant/template free precursor solution based synthesis of polyaniline (PANI) hybridized surface defective ZnO nanorods by a two-step process. Initially, ZnO nanorods have been prepared at 95 °C, followed by hybridization (coating) of PANI onto the ZnO via in situ polymerization of aniline monomer, forming ZnO-PANI nanohybrid (ZP). The structural properties of ZP have been analyzed by X-ray diffraction (XRD) and transmission electron microscopic (TEM) studies. The presence of surface defects especially the oxygen vacancies in ZnO has been characterized by photoluminescence emission, high resolution TEM, X-ray photoelectron spectroscopy (XPS) and micro-Raman spectral measurements. The chemical interaction of PANI with ZnO has been examined by Fourier transform infrared (FTIR) and XPS analyses. A significant enhancement in visible absorption of ZP sample is found as evidenced from UV–vis diffused reflectance spectral study. BET nitrogen adsorption-desorption isotherm shows an improved textural property (pore size, pore volume) of ZP. Moreover, a long-term stable photoelectrochemical activity (PEC) of ZP is found compare to pristine ZnO. The synergic effect of PANI hybridization and the presence of surface defects in ZnO NRs can enhance the PEC by prolonging the recombination rate of photogenerated charge carriers. The effect can also provide large number of active sites to make electrolyte diffusion and mass transportation easier in the nanohybrid. This simple synthesis strategy can be adopted for PANI hybridization with different metal oxide semiconductors

An intelligent system for real time automatic defect inspection on specular coated surfaces

Science.gov (United States)

Li, Jinhua; Parker, Johné M.; Hou, Zhen

2005-07-01

Product visual inspection is still performed manually or semi automatically in most industries from simple ceramic tile grading to complex automotive body panel paint defect and surface quality inspection. Moreover, specular surfaces present additional challenge to conventional vision systems due to specular reflections, which may mask the true location of objects and lead to incorrect measurements. There are some sophisticated visual inspection methods developed in recent years. Unfortunately, most of them are highly computational. Systems built on those methods are either inapplicable or very costly to achieve real time inspection. In this paper, we describe an integrated low-cost intelligent system developed to automatically capture, extract, and segment defects on specular surfaces with uniform color coatings. The system inspects and locates regular surface defects with lateral dimensions as small as a millimeter. The proposed system is implemented on a group of smart cameras using its on-board processing ability to achieve real time inspection. The experimental results on real test panels demonstrate the effectiveness and robustness of proposed system.

Defect Detection in Superconducting Radiofrequency Cavity Surface Using C + + and OpenCV

Science.gov (United States)

Oswald, Samantha; Thomas Jefferson National Accelerator Facility Collaboration

2014-03-01

Thomas Jefferson National Accelerator Facility (TJNAF) uses superconducting radiofrequency (SRF) cavities to accelerate an electron beam. If theses cavities have a small particle or defect, it can degrade the performance of the cavity. The problem at hand is inspecting the cavity for defects, little bubbles of niobium on the surface of the cavity. Thousands of pictures have to be taken of a single cavity and then looked through to see how many defects were found. A C + + program with Open Source Computer Vision (OpenCV) was constructed to reduce the number of hours searching through the images and finds all the defects. Using this code, the SRF group is now able to use the code to identify defects in on-going tests of SRF cavities. Real time detection is the next step so that instead of taking pictures when looking at the cavity, the camera will detect all the defects.

Influence of Si wafer thinning processes on (sub)surface defects

Energy Technology Data Exchange (ETDEWEB)

Inoue, Fumihiro, E-mail: fumihiro.inoue@imec.be [Imec, Kapeldreef 75, 3001 Leuven (Belgium); Jourdain, Anne; Peng, Lan; Phommahaxay, Alain; De Vos, Joeri; Rebibis, Kenneth June; Miller, Andy; Sleeckx, Erik; Beyne, Eric [Imec, Kapeldreef 75, 3001 Leuven (Belgium); Uedono, Akira [Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)

2017-05-15

Highlights: • Mono-vacancy free Si-thinning can be accomplished by combining several thinning techniques. • The grinding damage needs to be removed prior to dry etching, otherwise vacancies remain in the Si at a depth around 0.5 to 2 μm after Si wafer thickness below 5 μm. • The surface of grinding + CMP + dry etching is equivalent mono vacancy level as that of grinding + CMP. - Abstract: Wafer-to-wafer three-dimensional (3D) integration with minimal Si thickness can produce interacting multiple devices with significantly scaled vertical interconnections. Realizing such a thin 3D structure, however, depends critically on the surface and subsurface of the remaining backside Si after the thinning processes. The Si (sub)surface after mechanical grinding has already been characterized fruitfully for a range of few dozen of μm. Here, we expand the characterization of Si (sub)surface to 5 μm thickness after thinning process on dielectric bonded wafers. The subsurface defects and damage layer were investigated after grinding, chemical mechanical polishing (CMP), wet etching and plasma dry etching. The (sub)surface defects were characterized using transmission microscopy, atomic force microscopy, and positron annihilation spectroscopy. Although grinding provides the fastest removal rate of Si, the surface roughness was not compatible with subsequent processing. Furthermore, mechanical damage such as dislocations and amorphous Si cannot be reduced regardless of Si thickness and thin wafer handling systems. The CMP after grinding showed excellent performance to remove this grinding damage, even though the removal amount is 1 μm. For the case of Si thinning towards 5 μm using grinding and CMP, the (sub)surface is atomic scale of roughness without vacancy. For the case of grinding + dry etch, vacancy defects were detected in subsurface around 0.5–2 μm. The finished surface after wet etch remains in the nm scale in the strain region. By inserting a CMP step in

Optical probe for porosity defect detection on inner diameter surfaces of machined bores

Science.gov (United States)

Kulkarni, Ojas P.; Islam, Mohammed N.; Terry, Fred L.

2010-12-01

We demonstrate an optical probe for detection of porosity inside spool bores of a transmission valve body with diameters down to 5 mm. The probe consists of a graded-index relay rod that focuses a laser beam spot onto the inner surface of the bore. Detectors, placed in the specular and grazing directions with respect to the incident beam, measure the change in scattered intensity when a surface defect is encountered. Based on the scattering signatures in the two directions, the system can also validate the depth of the defect and distinguish porosity from bump-type defects coming out of the metal surface. The system can detect porosity down to a 50-μm lateral dimension and ~40 μm in depth with >3-dB contrast over the background intensity fluctuations. Porosity detection systems currently use manual inspection techniques on the plant floor, and the demonstrated probe provides a noncontact technique that can help automotive manufacturers meet high-quality standards during production.

Understanding the effect of surface/bulk defects on the photocatalytic activity of TiO2: anatase versus rutile.

Science.gov (United States)

Yan, Junqing; Wu, Guangjun; Guan, Naijia; Li, Landong; Li, Zhuoxin; Cao, Xingzhong

2013-07-14

The sole effect of surface/bulk defects of TiO2 samples on their photocatalytic activity was investigated. Nano-sized anatase and rutile TiO2 were prepared by hydrothermal method and their surface/bulk defects were adjusted simply by calcination at different temperatures, i.e. 400-700 °C. High temperature calcinations induced the growth of crystalline sizes and a decrease in the surface areas, while the crystalline phase and the exposed facets were kept unchanged during calcination, as indicated by the characterization results from XRD, Raman, nitrogen adsorption-desorption, TEM and UV-Vis spectra. The existence of surface/bulk defects in calcined TiO2 samples was confirmed by photoluminescence and XPS spectra, and the surface/bulk defect ratio was quantitatively analyzed according to positron annihilation results. The photocatalytic activity of calcined TiO2 samples was evaluated in the photocatalytic reforming of methanol and the photocatalytic oxidation of α-phenethyl alcohol. Based on the characterization and catalytic results, a direct correlation between the surface specific photocatalytic activity and the surface/bulk defect density ratio could be drawn for both anatase TiO2 and rutile TiO2. The surface defects of TiO2, i.e. oxygen vacancy clusters, could promote the separation of electron-hole pairs under irradiation, and therefore, enhance the activity during photocatalytic reaction.

The effect of bulk/surface defects ratio change on the photocatalysis of TiO2 nanosheet film

Science.gov (United States)

Wang, Fangfang; Ge, Wenna; Shen, Tong; Ye, Bangjiao; Fu, Zhengping; Lu, Yalin

2017-07-01

The photocatalysis behavior of TiO2 nanosheet array films was studied, in which the ratio of bulk/surface defects were adjusted by annealing at different temperature. Combining positron annihilation spectroscopy, EPR and XPS, we concluded that the bulk defects belonged to Ti3+ related vacancy defects. The results show that the separation efficiency of photogenerated electrons and holes could be significantly improved by optimizing the bulk/surface defects ratio of TiO2 nanosheet films, and in turn enhancing the photocatalysis behaviors.

Application of the Functional Theory in studying the adsorption of carbon monoxide on the TiO2 rutile surface of 110, defected surface and the surface modified by some metallic ions

International Nuclear Information System (INIS)

Le Kim Long; Phung Manh Quan; Tran Thi Thanh Van

2012-01-01

Density functional theory (DFT) is used to investigate properties of TiO 2 (110) surface with defects and metal-doped TiO 2 . The results of our calculations of structure of TiO 2 surface have been shown in good agreement with those of experiments and other ab-initio calculations. The differences of band structure between TiO 2 (110) and TiO 2 surface defected show that visible light can excite surface with defects easily. We also investigate density of states (DOS) of metal-doped surface (Li, Ca, Sc, V, Mo, Mn, Fe, Co, Ni) and find that the Mo-doped surface has very small band gap (∼ 0 eV). This surface may have higher photo-chemical activity in visible light. (author)

A method of eliminating the surface defect in low-temperature oxidation powder added UO2 pellet

International Nuclear Information System (INIS)

Yoo, H. S.; Lee, S. J.; Kim, J. I.; Jeon, K. R.; Kim, J. W.

2002-01-01

A study on methods to eliminate surface defect shown in low-temperature oxidation powder added UO 2 pellet has been performed. Powders oxidized at 350 .deg. C for 4 hrs were prepared and mixed with UO 2 powder after crushing them. After being sintered, surfaces of the pellet were inspected both visually and optically. A large number of defects were observed on the surface of the specimens in which low-temperature oxidation powders were directly mixed or master mixed with UO 2 powder while both specimens produced from mixed powders including milled oxidation powders and powders that were milled totally after mixing had clean surfaces. However, optical examination showed considerably large defected pores in the milled oxidation powder added pellet and it was confirmed that the inner defects can be eliminated completely only when milling the entire mixture on UO 2 and low-temperature oxidation powder, but not by crushing only oxidation powder

Repairing Nanoparticle Surface Defects.

Science.gov (United States)

Marino, Emanuele; Kodger, Thomas E; Crisp, Ryan W; Timmerman, Dolf; MacArthur, Katherine E; Heggen, Marc; Schall, Peter

2017-10-23

Solar devices based on semiconductor nanoparticles require the use of conductive ligands; however, replacing the native, insulating ligands with conductive metal chalcogenide complexes introduces structural defects within the crystalline nanostructure that act as traps for charge carriers. We utilized atomically thin semiconductor nanoplatelets as a convenient platform for studying, both microscopically and spectroscopically, the development of defects during ligand exchange with the conductive ligands Na 4 SnS 4 and (NH 4 ) 4 Sn 2 S 6 . These defects can be repaired via mild chemical or thermal routes, through the addition of L-type ligands or wet annealing, respectively. This results in a higher-quality, conductive, colloidally stable nanomaterial that may be used as the active film in optoelectronic devices. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

Segmentation, surface rendering, and surface simplification of 3-D skull images for the repair of a large skull defect

Science.gov (United States)

Wan, Weibing; Shi, Pengfei; Li, Shuguang

2009-10-01

Given the potential demonstrated by research into bone-tissue engineering, the use of medical image data for the rapid prototyping (RP) of scaffolds is a subject worthy of research. Computer-aided design and manufacture and medical imaging have created new possibilities for RP. Accurate and efficient design and fabrication of anatomic models is critical to these applications. We explore the application of RP computational methods to the repair of a pediatric skull defect. The focus of this study is the segmentation of the defect region seen in computerized tomography (CT) slice images of this patient's skull and the three-dimensional (3-D) surface rendering of the patient's CT-scan data. We see if our segmentation and surface rendering software can improve the generation of an implant model to fill a skull defect.

SiC substrate defects and III-N heteroepitaxy

Energy Technology Data Exchange (ETDEWEB)

Poust, B D [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Koga, T S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Sandhu, R [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Heying, B [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Hsing, R [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Wojtowicz, M [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Khan, A [Department of Electrical Engineering, University of South Carolina, Columbia, SC (United States); Goorsky, M S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States)

2003-05-21

This study addressed how defects in SiC substrates influence the crystallographic properties of AlGaN/GaN layers deposited by metallorganic vapour phase epitaxy and by molecular beam epitaxy. We employed double crystal reflection x-ray topography using symmetric (0008) and (00012) reflections with CuK{alpha} radiation ({lambda} = 1.54 A) to image dislocations, micropipes, and low angle boundaries in SiC substrates. Lattice strain near the core of a micropipe defect was estimated to be of the order of 10{sup -7}. The substrates investigated exhibited radial patterns of strain and, primarily, of tilt of the order of tens of arcsec. After deposition of the AlGaN and GaN layers, DCXRT images were generated from the substrate (0008) or (00012) and GaN epitaxial layer (0004) reflections. Full-width at half-maximum values ranging from {approx}100 to 300 arcsec were typical of the GaN reflections, while those of the 4H-SiC reflections were {approx}20-70 arcsec. Micropipes, tilt boundaries, and inclusions in the SiC were shown to produce structural defects in the GaN layers. A clear correlation between SiC substrate defects and GaN defects has been established.

SiC substrate defects and III-N heteroepitaxy

International Nuclear Information System (INIS)

Poust, B D; Koga, T S; Sandhu, R; Heying, B; Hsing, R; Wojtowicz, M; Khan, A; Goorsky, M S

2003-01-01

This study addressed how defects in SiC substrates influence the crystallographic properties of AlGaN/GaN layers deposited by metallorganic vapour phase epitaxy and by molecular beam epitaxy. We employed double crystal reflection x-ray topography using symmetric (0008) and (00012) reflections with CuKα radiation (λ = 1.54 A) to image dislocations, micropipes, and low angle boundaries in SiC substrates. Lattice strain near the core of a micropipe defect was estimated to be of the order of 10 -7 . The substrates investigated exhibited radial patterns of strain and, primarily, of tilt of the order of tens of arcsec. After deposition of the AlGaN and GaN layers, DCXRT images were generated from the substrate (0008) or (00012) and GaN epitaxial layer (0004) reflections. Full-width at half-maximum values ranging from ∼100 to 300 arcsec were typical of the GaN reflections, while those of the 4H-SiC reflections were ∼20-70 arcsec. Micropipes, tilt boundaries, and inclusions in the SiC were shown to produce structural defects in the GaN layers. A clear correlation between SiC substrate defects and GaN defects has been established

Chevron defect at the intersection of grain boundaries with free surfaces in Au

International Nuclear Information System (INIS)

Radetic, T.; Lancon, F.; Dahmen, U.

2002-01-01

We have identified a new defect at the intersection between grain boundaries and surfaces in Au using atomic resolution transmission electron microscopy. At the junction line of 90 deg. tilt grain boundaries of (110)-(001) orientation with the free surface, a small segment of the grain boundary, about 1 nm in length, dissociates into a triangular region with a chevronlike stacking disorder and a distorted hcp structure. The structure and stability of these defects are confirmed by atomistic simulations, and we point out the relationship with the one-dimensional incommensurate structure of the grain boundary

Cladding defects in hollow core fibers for surface mode suppression and improved birefringence

DEFF Research Database (Denmark)

Michieletto, Mattia; Lyngso, J. K.; Lægsgaard, Jesper

2014-01-01

We demonstrate a novel polarization maintaining hollow-core photonic bandgap fiber geometry that reduces the impact of surface modes on fiber transmission. The cladding structure is modified with a row of partially collapsed holes to strip away unwanted surface modes. A theoretical investigation...... of the surface mode stripping is presented and compared to the measured performance of four 7-cells core fibers that were drawn with different collapse ratio of the defects. The varying pressure along the defect row in the cladding during drawing introduces an ellipticity of the core. This, combined...... with the presence of antiresonant features on the core wall, makes the fibers birefringent, with excellent polarization maintaining properties. (C) 2014 Optical Society of America...

Positronic probe of vacancy defects on surfaces of Au nanoparticles embedded in MgO

International Nuclear Information System (INIS)

Xu, Jun; Moxom, J.; Somieski, B.; White, C. W.; Mills, A. P.; Suzuki, R.; Ishibashi, S.

2001-01-01

Clusters of four atomic vacancies were found in Au nanoparticle-embedded MgO by positron lifetime spectroscopy [Phys. Rev. Lett. 83, 4586 (1999)]. These clusters were also suggested to locate at the surface of Au nanoparticles by one-detector measurements of Doppler broadening of annihilation radiation. In this work we provide evidence, using two-detector coincidence experiments of Doppler broadening (2D-DBAR), to clarify that these vacancy clusters reside on the surfaces of Au nanoparticles. This work also demonstrates a method for identifying defects at nanomaterials interfaces: a combination of both positron lifetime spectroscopy, which tells the type of the defects, and 2D-DBAR measurements, which reveals chemical environment of the defects

Positronic probe of vacancy defects on surfaces of Au nanoparticles embedded in MgO

Science.gov (United States)

Xu, Jun; Moxom, J.; Somieski, B.; White, C. W.; Mills, A. P., Jr.; Suzuki, R.; Ishibashi, S.

2001-09-01

Clusters of four atomic vacancies were found in Au nanoparticle-embedded MgO by positron lifetime spectroscopy [Phys. Rev. Lett. 83, 4586 (1999)]. These clusters were also suggested to locate at the surface of Au nanoparticles by one-detector measurements of Doppler broadening of annihilation radiation. In this work we provide evidence, using two-detector coincidence experiments of Doppler broadening (2D-DBAR), to clarify that these vacancy clusters reside on the surfaces of Au nanoparticles. This work also demonstrates a method for identifying defects at nanomaterials interfaces: a combination of both positron lifetime spectroscopy, which tells the type of the defects, and 2D-DBAR measurements, which reveals chemical environment of the defects.

Surface defect detection in tiling Industries using digital image processing methods: analysis and evaluation.

Science.gov (United States)

Karimi, Mohammad H; Asemani, Davud

2014-05-01

Ceramic and tile industries should indispensably include a grading stage to quantify the quality of products. Actually, human control systems are often used for grading purposes. An automatic grading system is essential to enhance the quality control and marketing of the products. Since there generally exist six different types of defects originating from various stages of tile manufacturing lines with distinct textures and morphologies, many image processing techniques have been proposed for defect detection. In this paper, a survey has been made on the pattern recognition and image processing algorithms which have been used to detect surface defects. Each method appears to be limited for detecting some subgroup of defects. The detection techniques may be divided into three main groups: statistical pattern recognition, feature vector extraction and texture/image classification. The methods such as wavelet transform, filtering, morphology and contourlet transform are more effective for pre-processing tasks. Others including statistical methods, neural networks and model-based algorithms can be applied to extract the surface defects. Although, statistical methods are often appropriate for identification of large defects such as Spots, but techniques such as wavelet processing provide an acceptable response for detection of small defects such as Pinhole. A thorough survey is made in this paper on the existing algorithms in each subgroup. Also, the evaluation parameters are discussed including supervised and unsupervised parameters. Using various performance parameters, different defect detection algorithms are compared and evaluated. Copyright © 2013 ISA. Published by Elsevier Ltd. All rights reserved.

Application of Volta potential mapping to determine metal surface defects

International Nuclear Information System (INIS)

Nazarov, A.; Thierry, D.

2007-01-01

As a rule, stress or fatigue cracks originate from various surface imperfections, such as pits, inclusions or locations showing a residual stress. It would be very helpful for material selection to be able to predict the likelihood of environment-assisted cracking or pitting corrosion. By using Scanning Kelvin Probe (the vibrating capacitor with a spatial resolution of 80 μm) the profiling of metal electron work function (Volta potential) in air is applied to the metal surfaces showing residual stress, MnS inclusions and wearing. The Volta potential is influenced by the energy of electrons at the Fermi level and drops generally across the metal/oxide/air interfaces. Inclusions (e.g. MnS) impair continuity of the passive film that locally decreases Volta potential. The stress applied gives rise to dislocations, microcracks and vacancies in the metal and the surface oxide. The defects decrease Volta and corrosion potentials; reduce the overvoltage for processes of passivity breakdown and anodic metal dissolution. These 'anodic' defects can be visualized in potential mapping that can help us to predict locations with higher risk of pitting corrosion or cracking

Prospects of closed-circuit television in detecting surface defects

International Nuclear Information System (INIS)

Kaisler, L. et al.

The use is discussed of closed-circuit television for optical in-service testing of surface defects of nuclear reactors. Experience gained by UJV Rez with in-service testing of the WWR-S reactor is briefly reported. Main attention is devoted to recognizability of defects and to determining the fundamental conditions of the applicability and limitations of the closed-circuit television method. In experiments, resolution of the method was tested and the role of the human factor was assessed in evaluating the results. The need was stressed of thorough training of operators. Based on the experiments conducted, considerations are presented regarding modifications of the individual elements of the tv chain aimed at improved quality of information and a limited role of the observer. (B.S.)

Function of TiO2 Lattice Defects toward Photocatalytic Processes: View of Electronic Driven Force

Directory of Open Access Journals (Sweden)

Huanan Cui

2013-01-01

Full Text Available Oxygen vacancies and Ti-related defects (OTDs are the main lattice defects of TiO2, which have great influence on its photocatalytic activity. To understand the relationship between the defects and photocatalytic activities, detailed discussions based on the electronic driven force provided by these defects are carried out during the three commonly accepted processes in photocatalytic reactions. It is found that these defects inevitably (i influence the energy structure of the pristine TiO2 as the isolate acceptor/donor level or hybrid with the original orbital, (ii provide a disordered short-range force that confuses the charge carriers transferring to surface active sites, (iii act not only as the surface active sites for trapping the charge carriers but also as the main chemisorption sites for O2, H2O, and organic species. These effects of the defects make them one of the key factors that determine the efficiency of heterogeneous photocatalysis. Clarifying the role of the defects will further facilitate the exploration and the construction of high-performance photocatalysts for practical applications.

Little string origin of surface defects

Energy Technology Data Exchange (ETDEWEB)

Haouzi, Nathan; Schmid, Christian [Center for Theoretical Physics, University of California, Berkeley,LeConte Hall, Berkeley (United States)

2017-05-16

We derive a large class of codimension-two defects of 4d N=4 Super Yang-Mills (SYM) theory from the (2,0) little string. The origin of the little string is type IIB theory compactified on an ADE singularity. The defects are D-branes wrapping the 2-cycles of the singularity. We use this construction to make contact with the description of SYM defects due to Gukov and Witten https://arxiv.org/abs/hep-th/0612073. Furthermore, we provide a geometric perspective on the nilpotent orbit classification of codimension-two defects, and the connection to ADE-type Toda CFT. The only data needed to specify the defects is a set of weights of the algebra obeying certain constraints, which we give explicitly. We highlight the differences between the defect classification in the little string theory and its (2,0) CFT limit.

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

International Nuclear Information System (INIS)

Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

2014-01-01

The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

Deep convolutional neural networks for detection of rail surface defects

NARCIS (Netherlands)

Faghih Roohi, S.; Hajizadeh, S.; Nunez Vicencio, Alfredo; Babuska, R.; De Schutter, B.H.K.; Estevez, Pablo A.; Angelov, Plamen P.; Del Moral Hernandez, Emilio

2016-01-01

In this paper, we propose a deep convolutional neural network solution to the analysis of image data for the detection of rail surface defects. The images are obtained from many hours of automated video recordings. This huge amount of data makes it impossible to manually inspect the images and

Size Effects on Surface Elastic Waves in a Semi-Infinite Medium with Atomic Defect Generation

Directory of Open Access Journals (Sweden)

F. Mirzade

2013-01-01

Full Text Available The paper investigates small-scale effects on the Rayleigh-type surface wave propagation in an isotopic elastic half-space upon laser irradiation. Based on Eringen’s theory of nonlocal continuum mechanics, the basic equations of wave motion and laser-induced atomic defect dynamics are derived. Dispersion equation that governs the Rayleigh surface waves in the considered medium is derived and analyzed. Explicit expressions for phase velocity and attenuation (amplification coefficients which characterize surface waves are obtained. It is shown that if the generation rate is above the critical value, due to concentration-elastic instability, nanometer sized ordered concentration-strain structures on the surface or volume of solids arise. The spatial scale of these structures is proportional to the characteristic length of defect-atom interaction and increases with the increase of the temperature of the medium. The critical value of the pump parameter is directly proportional to recombination rate and inversely proportional to deformational potentials of defects.

A Novel Method for Surface Defect Detection of Photovoltaic Module Based on Independent Component Analysis

Directory of Open Access Journals (Sweden)

Xuewu Zhang

2013-01-01

Full Text Available This paper proposed a new method for surface defect detection of photovoltaic module based on independent component analysis (ICA reconstruction algorithm. Firstly, a faultless image is used as the training image. The demixing matrix and corresponding ICs are obtained by applying the ICA in the training image. Then we reorder the ICs according to the range values and reform the de-mixing matrix. Then the reformed de-mixing matrix is used to reconstruct the defect image. The resulting image can remove the background structures and enhance the local anomalies. Experimental results have shown that the proposed method can effectively detect the presence of defects in periodically patterned surfaces.

Chemical Interaction between U(VI) and Eu(III) ions on a Silica Surface

International Nuclear Information System (INIS)

Park, K. K.; Cha, W. S.; Cho, H. R.; Im, H. J.; Jung, E. C.

2010-01-01

Understanding the chemical behavior of actinide in groundwater flow is important for assessing the possibility of its migration with water flow in the radioactive waste disposal site. Precipitation/ dissolution in groundwater and adsorption/desorption onto a geological solid surface would determine its migration. The sorption in a geochemical system was expected to be a reaction on a naturally equilibrated surface. However, the construction of a waste disposal facility could disturb this equilibrium state, induce a new reaction environment and affect a nanoscopic surface reaction of actinide. Uranium is ubiquitous in the natural environment and a representative element in a nuclear fuel cycle and in a high level radioactive waste. In oxic environments, it is typically present as uranyl oxocation (UO 2 2+ ), which is easily adsorbed and thereby removed from a solution in the near neutral pH range. This adsorption would form a new surface condition to give an unexpected adsorption behavior for other actinide ions. Eu(III) frequently is used as a chemical analogue of Am(III) and Cm(III) in migration chemistry. The adsorption phenomena has been interpreted with the help of a SCM(surface complexation model). Some spectroscopic techniques such as EPR (Electron Paramagnetic Resonance), IR (InfraRed), EXAFS (Extended X-ray Absorption Fine Structure) and TRLFS (Time Resolved Laser Fluorescence Spectroscopy) have been used for the identification of a modeled adsorbing species. In the case of fluorescence elements, TRLFS has advantages over other techniques for its high sensitivity being proportional to laser source intensity and good selectivity depending on specific transition and lifetime. This technique can be applied to a species on a solid surface not absorbing light such as silica. U(VI) and Eu(III) have fluorescente properties reflecting their coordination structure. In this study, the interaction between U(VI) and Eu(III) on a silica surface was studied by a

Research on Forming Mechanisms and Controlling Measurements for Surface Light Spot Defects of Galvanizing Steel Coils for Automobile Use

Science.gov (United States)

Guangmin, Wei; Haiyan, Sun; Jianqiang, Shi; Lianxuan, Wang; Haihong, Wu

When producing high surface quality galvanizing steel coils for automobile use, there are always many light spots on the surface since Hansteel CGL No.1 has been put into operation. The defect samples were analyzed by SEM and EDS. The result shows that cause for light spot is not only one. There are more Mn and P in high strength auto sheet, which can result in difficulty to be cleaned off the oxide on the hot rolled coils, so the defects coming. This is why the defects come with high strength auto sheet. When coils galvanized, the defects can't be covered up. To the contrary, the defects will be more obvious when zinc growing on the surface. And sometimes zinc or residue can adhere to work rolls when strips passing through SPM. The deposits then press normal coating. So the light spots come more. When the defect comes from pressing, there is no defect on steel base. The causation is found and measures were taken including high pressure cleaning equipments adopted. Result shows that the defects disappeared.

The effect of a defective BSF layer on solar cell open circuit voltage. [Back Surface Field

Science.gov (United States)

Weizer, V. G.

1985-01-01

A straightforward analysis of special limiting cases has permitted the determination of the range of possible open circuit voltage losses due to a defective BSF (back surface field) layer. An important result of the analysis is the finding that it is possible to have a fully effective BSF region, regardless of the spatial distribution of the defective areas, as long as the total defective area is reduced below certain limits. Distributed defects were found to be much more harmful than lumped defects.

Reactivity of a reduced metal oxide surface: hydrogen, water and carbon monoxide adsorption on oxygen defective rutile TiO 2( 1 1 0 )

Science.gov (United States)

Menetrey, M.; Markovits, A.; Minot, C.

2003-02-01

The reactivity at reduced surface differs from that on the stoichiometric perfect surfaces. This does not originate uniquely from the modification of the coordination; electron count also is determining. The general trend is a decrease of the heat of adsorption on the metal cations. The reactivity decreases at sites in the vicinity of the defects due to the reduction induced by the O vacancies. At the defect site the decrease is less pronounced for H, H 2, CO and molecular H 2O. In the case of H 2O dissociative adsorption, the defect site is more reactive than the perfect surface. Thus, a hydration converting the defective-reduced TiO 2 to the hydrogenated non-defective-reduced surface is easy. The resulting structure possesses surface hydroxyl groups. It is probably the easiest way to form the hydrogenated non-defective surface. On TiO 2, the defective surface requires very anhydrous conditions.

Rapid surface defect detection based on singular value decomposition using steel strips as an example

Science.gov (United States)

Sun, Qianlai; Wang, Yin; Sun, Zhiyi

2018-05-01

For most surface defect detection methods based on image processing, image segmentation is a prerequisite for determining and locating the defect. In our previous work, a method based on singular value decomposition (SVD) was used to determine and approximately locate surface defects on steel strips without image segmentation. For the SVD-based method, the image to be inspected was projected onto its first left and right singular vectors respectively. If there were defects in the image, there would be sharp changes in the projections. Then the defects may be determined and located according sharp changes in the projections of each image to be inspected. This method was simple and practical but the SVD should be performed for each image to be inspected. Owing to the high time complexity of SVD itself, it did not have a significant advantage in terms of time consumption over image segmentation-based methods. Here, we present an improved SVD-based method. In the improved method, a defect-free image is considered as the reference image which is acquired under the same environment as the image to be inspected. The singular vectors of each image to be inspected are replaced by the singular vectors of the reference image, and SVD is performed only once for the reference image off-line before detecting of the defects, thus greatly reducing the time required. The improved method is more conducive to real-time defect detection. Experimental results confirm its validity.

Improving surface and defect center chemistry of fluorescent nanodiamonds for imaging purposes--a review.

Science.gov (United States)

Nagl, Andreas; Hemelaar, Simon Robert; Schirhagl, Romana

2015-10-01

Diamonds are widely used for jewelry owing to their superior optical properties accounting for their fascinating beauty. Beyond the sparkle, diamond is highly investigated in materials science for its remarkable properties. Recently, fluorescent defects in diamond, particularly the negatively charged nitrogen-vacancy (NV(-)) center, have gained much attention: The NV(-) center emits stable, nonbleaching fluorescence, and thus could be utilized in biolabeling, as a light source, or as a Förster resonance energy transfer donor. Even more remarkable are its spin properties: with the fluorescence intensity of the NV(-) center reacting to the presence of small magnetic fields, it can be utilized as a sensor for magnetic fields as small as the field of a single electron spin. However, a reproducible defect and surface and defect chemistry are crucial to all applications. In this article we review methods for using nanodiamonds for different imaging purposes. The article covers (1) dispersion of particles, (2) surface cleaning, (3) particle size selection and reduction, (4) defect properties, and (5) functionalization and attachment to nanostructures, e.g., scanning probe microscopy tips.

New lethal disease involving type I and III collagen defect resembling geroderma osteodysplastica, De Barsy syndrome, and Ehlers-Danlos syndrome IV.

Science.gov (United States)

Jukkola, A; Kauppila, S; Risteli, L; Vuopala, K; Risteli, J; Leisti, J; Pajunen, L

1998-06-01

We describe the clinical findings and biochemical features of a male child suffering from a so far undescribed lethal connective tissue disorder characterised by extreme hypermobility of the joints, lax skin, cataracts, severe growth retardation, and insufficient production of type I and type III procollagens. His features are compared with Ehlers-Danlos type IV, De Barsy syndrome, and geroderma osteodysplastica, as these disorders show some symptoms and signs shared with our patient. The child died because of failure of the connective tissue structures joining the skull and the spine, leading to progressive spinal stenosis. The aortic valve was translucent and insufficient. The clinical symptoms and signs, together with histological findings, suggested a collagen defect. Studies on both skin fibroblast cultures and the patient's serum showed reduced synthesis of collagen types I and III at the protein and RNA levels. The sizes of the mRNAs and newly synthesised proteins were normal, excluding gross structural abnormalities. These findings are not in accordance with any other collagen defect characterised so far.

Tailored lithium storage performance of graphene aerogel anodes with controlled surface defects for lithium-ion batteries

International Nuclear Information System (INIS)

Shan, Hui; Xiong, Dongbin; Li, Xifei; Sun, Yipeng; Yan, Bo; Li, Dejun; Lawes, Stephen; Cui, Yanhua; Sun, Xueliang

2016-01-01

Graphical abstract: - Highlights: • The graphene aerogel (GA) with controllable surface defects was synthesized. • The graphene aerogel anodes showed high specific capacity and excellent cyclability. • Surface defects on the GA significantly function for lithium storage. • This study can extend the application of the graphene anodes for LIBs. - Abstract: Three dimensional self-assembled graphene aerogel (GA) anode materials with some surface defects have been successfully generated through a facile hydrothermal procedure using graphene oxide as precursor. The morphologies and textural properties of as-obtained GA were investigated by scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman and other spectroscopy techniques. The surface defects and electrical conductivities of GA can be controlled by adjusting the hydrothermal reaction time. The results indicate that GA with a reaction time of 6 h exhibits extremely high reversible capacity (1430 mAh g"−"1 at the current density of 100 mA g"−"1) and superior rate capability (587 mAh g"−"1 at 800 mA g"−"1) with excellent cycling stability (maintaining a reversible capacity of 960 mAh g"−"1 at 100 mA g"−"1 after 100 cycles). It is demonstrated that the 3D porous network with increased defect density, as well as the considerable electrical conductivity, results in the excellent electrochemical performance of the as-made GA anodes in lithium-ion batteries.

AFM studies of a new type of radiation defect on mica surfaces caused by highly charged ion impact

International Nuclear Information System (INIS)

Ruehlicke, C.; Briere, M.A.; Schneider, D.

1994-01-01

Radiation induced defects on mica caused by the impact of slow very highly charged ions (SVHCI) have been investigated with an atomic force microscope (AFM). Freshly cleaved surfaces of different types of muscovite were irradiated with SVHCI extracted from the LLNL electron beam ion trap (EBIT) at velocities of ca. 2 keV/amu. Atomic force microscopy of the surface reveals the formation of blisterlike defects associated with single ion impact. The determined defect volume which appears to increase linearly with the incident charge state and exhibits a threshold incident charge state has been determined using the AFM. These results indicate that target atoms are subjected to mutual electrostatic repulsion due to ionization through potential electron emission upon approach of the ion. If the repulsion leads to permanent atomic displacement, surface defects are formed

Inspection of defects of composite materials in inner cylindrical surfaces using endoscopic shearography

Science.gov (United States)

Macedo, Fabiano Jorge; Benedet, Mauro Eduardo; Fantin, Analucia Vieira; Willemann, Daniel Pedro; da Silva, Fábio Aparecido Alves; Albertazzi, Armando

2018-05-01

This work presents the development of a special shearography system with radial sensitivity and explores its applicability for detecting adhesion flaws on internal surfaces of flanged joints of composite material pipes. The inspection is performed from the inner surface of the tube where the flange is adhered. The system uses two conical mirrors to achieve radial sensitivity. A primary 45° conical mirror is responsible for promoting the inspection of the internal tubular surface on its 360° A special Michelson interferometer is formed replacing one of the plane mirrors by a conical mirror. The image reflected by this conical mirror is shifted away from the image center in a radial way and a radial shear is produced on the images. The concept was developed and a prototype built and tested. First, two tubular steel specimens internally coated with composite material and having known artificial defects were analyzed to test the ability of the system to detect the flaws. After the principle validation, two flanged joints were then analyzed: (a) a reference one, without any artificial defects and (b) a test one with known artificial defects, simulating adhesion failures with different dimensions and locations. In all cases, thermal loading was applied through a hot air blower on the outer surface of the joint. The system presented very good results on all inspected specimens, being able to detect adhesion flaws present in the flanged joints. The experimental results obtained in this work are promising and open a new front for inspections of inner surfaces of pipes with shearography.

Sb(III)-Imprinted Organic-Inorganic Hybrid Sorbent Prepared by Hydrothermal-Assisted Surface Imprinting Technique for Selective Adsorption of Sb(III)

Science.gov (United States)

Zhang, Dan; Zhao, Yue; Xu, Hong-Bo

2018-03-01

Sb(III)-imprinted organic-inorganic hybrid sorbent was prepared by hydrothermal-assisted surface imprinting technique and was characterized by Fourier transform infrared spectroscopy, scanning electron microscopy coupled to an energy dispersive spectrometer and N2 adsorption/desorption isotherms. Hydrothermal-assisted process can improve the selectivity of the Sb(III)-imprinted hybrid sorbent for Sb(III) due to stable control of temperature and pressure. The Sb(III)-imprinted hybrid sorbent IIS indicated higher selectivity for Sb(III), had high static adsorption capacity of 37.3 mg g-1 for Sb(III), displayed stable adsorption capacity in pH range from 4 to 8, reached an rapid adsorption equilibrium within 30 min. According to the correlation coefficient ( r 2 > 0.99), the experimental data fitted better the pseudo-second-order kinetic model and Langmuir equilibrium isotherm.

Fracture Resistance, Surface Defects and Structural Strength of Glass

OpenAIRE

Rodichev, Y.M.; Veer, F.A.

2010-01-01

This paper poses the theory that the fracture resistance of basic float glass is dependent on it physicochemical properties and the surface defects fonned under the float glass production, glass processing and handling at the service conditions compose the aggregate basis for structural glass strength assessment. The effect of loading conditions, constructional and technological factors on the engineering strength of glass can be evaluated in certain cases using fracture mechanics with inform...

Frequency Optimization for Enhancement of Surface Defect Classification Using the Eddy Current Technique

Science.gov (United States)

Fan, Mengbao; Wang, Qi; Cao, Binghua; Ye, Bo; Sunny, Ali Imam; Tian, Guiyun

2016-01-01

Eddy current testing is quite a popular non-contact and cost-effective method for nondestructive evaluation of product quality and structural integrity. Excitation frequency is one of the key performance factors for defect characterization. In the literature, there are many interesting papers dealing with wide spectral content and optimal frequency in terms of detection sensitivity. However, research activity on frequency optimization with respect to characterization performances is lacking. In this paper, an investigation into optimum excitation frequency has been conducted to enhance surface defect classification performance. The influences of excitation frequency for a group of defects were revealed in terms of detection sensitivity, contrast between defect features, and classification accuracy using kernel principal component analysis (KPCA) and a support vector machine (SVM). It is observed that probe signals are the most sensitive on the whole for a group of defects when excitation frequency is set near the frequency at which maximum probe signals are retrieved for the largest defect. After the use of KPCA, the margins between the defect features are optimum from the perspective of the SVM, which adopts optimal hyperplanes for structure risk minimization. As a result, the best classification accuracy is obtained. The main contribution is that the influences of excitation frequency on defect characterization are interpreted, and experiment-based procedures are proposed to determine the optimal excitation frequency for a group of defects rather than a single defect with respect to optimal characterization performances. PMID:27164112

Syndromes and Disorders Associated with Omphalocele (III: Single Gene Disorders, Neural Tube Defects, Diaphragmatic Defects and Others

Directory of Open Access Journals (Sweden)

Chih-Ping Chen

2007-06-01

Full Text Available Omphalocele can be associated with single gene disorders, neural tube defects, diaphragmatic defects, fetal valproate syndrome, and syndromes of unknown etiology. This article provides a comprehensive review of omphalocele-related disorders: otopalatodigital syndrome type II; Melnick–Needles syndrome; Rieger syndrome; neural tube defects; Meckel syndrome; Shprintzen–Goldberg omphalocele syndrome; lethal omphalocele-cleft palate syndrome; cerebro-costo-mandibular syndrome; fetal valproate syndrome; Marshall–Smith syndrome; fibrochondrogenesis; hydrolethalus syndrome; Fryns syndrome; omphalocele, diaphragmatic defects, radial anomalies and various internal malformations; diaphragmatic defects, limb deficiencies and ossification defects of skull; Donnai–Barrow syndrome; CHARGE syndrome; Goltz syndrome; Carpenter syndrome; Toriello–Carey syndrome; familial omphalocele; Cornelia de Lange syndrome; C syndrome; Elejalde syndrome; Malpuech syndrome; cervical ribs, Sprengel anomaly, anal atresia and urethral obstruction; hydrocephalus with associated malformations; Kennerknecht syndrome; lymphedema, atrial septal defect and facial changes; and craniosynostosis- mental retardation syndrome of Lin and Gettig. Perinatal identification of omphalocele should alert one to the possibility of omphalocele-related disorders and familial inheritance and prompt a thorough genetic counseling for these disorders.

Mathematical modelling of ultrasonic testing of components with defects close to a non-planar surface

International Nuclear Information System (INIS)

Westlund, Jonathan; Bostroem, Anders

2011-05-01

Nondestructive testing with ultrasound is a standard procedure in the nuclear power industry. To develop and qualify the methods extensive experimental work with test blocks is usually required. This can be very time-consuming and costly and it also requires a good physical intuition of the situation. A reliable mathematical model of the testing situation can, therefore, be very valuable and cost-effective as it can reduce experimental work significantly. A good mathematical model enhances the physical intuition and is very useful for parametric studies, as a pedagogical tool, and for the qualification of procedures and personnel. The aim of the present report is to describe work that has been performed to model ultrasonic testing of components that contain a defect close to a nonplanar surface. For nuclear power applications this may be a crack or other defect on the inside of a pipe with a diameter change or connection. This is an extension of the computer program UTDefect, which previously only admits a planar back surface (which is often applicable also to pipes if the pipe diameter is large enough). The problems are investigated in both 2D and 3D, and in 2D both the simpler anti-plane (SH) and the in-plane (P-SV) problem are studied. The 2D investigations are primarily solved to get a 'feeling' for the solution procedure, the discretizations, etc. In all cases an integral equation approach with a Green's function in the kernel is taken. The nonplanar surface is treated by the boundary element method (BEM) where a division of the surface is made in small elements. The defects are mainly cracks, strip-like (in 2D) or rectangular (in 3D), and these are treated with more analytical methods. In 2D also more general defects are treated with the help of their transition (T) matrix. As in other parts of UTDefect the ultrasonic probes in transmission and reception are included in the model. In 3D normalization by a side drilled hole is possible. Some numerical results

Positron studies of defected metals, metallic surfaces. Final report, July 1, 1985--December 1, 1991

Energy Technology Data Exchange (ETDEWEB)

Bansil, A.

1991-12-31

Specific problems proposed under this project included the treatment of electronic structure and momentum density in various disordered and defected systems. Since 1987, when the new high-temperature superconductors were discovered, the project focused extensively on questions concerning the electronic structure and Fermiology of high-{Tc} superconductors, in particular, (i) momentum density and positron experiments, (ii) angle-resolved photoemission intensities, (iii) effects of disorder and substitutions in the high-{Tc}`s.

Ability of multiaxial fatigue criteria accounting for stress gradient effect for surface defective material

Directory of Open Access Journals (Sweden)

Niamchaona Wichian

2018-01-01

Full Text Available New high strength steels are widely used nowadays in many industrial areas as in automotive industry. These steels are more resistant and provide higher fatigue limits than latter ones but they are also more sensible to small defects. Natural defects that outcome from metallurgy (as shrinkage, inclusion, void are not considered in this study. We focus on small manufacturing defects such as cutting edge defects generated by punching or other surface defects due to stamping. These defects are harmful on the material fatigue behaviour due to high stress concentration at defects root. They also generate stress gradient that is beneficial from the fatigue strength point of view. This study focusses on the stress gradient (it does not account for the size effect from cylindrical defect on specimen edge. Practically a normal stress gradient is added in multiaxial fatigue criteria formulation. Both critical plane approach and integral approach are involved in the present study. This gradient is calculated from stress states at defects root by using FEM. Criteria fatigue function at N cycles is used to assess the material fatigue strength. Obviously multiaxial fatigue criteria accounting for stress gradient give more precise fatigue functions than criteria that do not consider the gradient influence.

Detection of defects on the metal surface using the modulated microwave

International Nuclear Information System (INIS)

Joo, Gwang Tae; Jeong, Sung Hae; Song, Ki Young; Kim, Jin Ouk

1996-01-01

The defects on the metal surface, like as ended circular pressed hole, penetrated circular drilled hole and linear hollow lane(ended linear crack), are tested by method of reflection, transmission, fixed carrier frequency and mod-demodulation techniques using microwave horn antenna and rectangular waveguide on 9.2 GHz carrier and 3 kHz modulation frequency. In the cases of ended circular hole and penetrated hole defects, the magnitude of reflection signals changed extremely, and the results on the defects' sizes are enlarge d by about 2.5 times at the ended hole and decreased by about 75% at the penetrate d hole. And in the cases of linear hollow lane, depths are 0.45 mm, 1.2 mm and 2.4 mm, the measured results on average increasing rate of detected reflection signals according to crack widths are 0.46 mV/mm, 0.32 mV/mm and 0.23 mV/mm each, for length of lane 150 mm.

[Inconformity between soft tissue defect and bony defect in incomplete cleft palate].

Science.gov (United States)

Zhou, Xia; Ma, Lian

2014-12-01

To evaluate the inconformity between soft tissue defect and bony defect by observing the cleft extent of palate with complete secondary palate bony cleft in incomplete cleft palate patient. The patients with incomplete cleft palate treated in Hospital of Stomatology Peking University from July 2012 to June 2013 were reviewed, of which 75 cases with complete secondary palate bony cleft were selected in this study. The CT scan and intraoral photograph were taken before operation. The patients were classified as four types according to the extent of soft tissue defect. Type 1: soft tissue defect reached incisive foremen region, Type 2 was hard and soft cleft palate, Type 3 soft cleft palate and Type 4 submucous cleft palate. Type 1 was defined as conformity group (CG). The other three types were defined as inconformity group (ICG) and divided into three subgroups (ICG-I), (ICG-II) and (ICG-III). Fifty-seven patients were in ICG group, and the rate of inconformity was 76% (57/75). The percentage of ICG-I, ICG-II and ICG-III was 47% (27/57), 23% (13/57) and 30% (17/57), respevtively. There are different types of soft tissue deformity with complete secondary palate bony cleft. The inconformity between soft tissue and hard tissue defect exits in 3/4 of isolated cleft palate patients.

Adatom Fe(III on the hematite surface: Observation of a key reactive surface species

Directory of Open Access Journals (Sweden)

Rosso Kevin M

2004-06-01

Full Text Available The reactivity of a mineral surface is determined by the variety and population of different types of surface sites (e.g., step, kink, adatom, and defect sites. The concept of "adsorbed nutrient" has been built into crystal growth theories, and many other studies of mineral surface reactivity appeal to ill-defined "active sites." Despite their theoretical importance, there has been little direct experimental or analytical investigation of the structure and properties of such species. Here, we use ex-situ and in-situ scanning tunneling microcopy (STM combined with calculated images based on a resonant tunneling model to show that observed nonperiodic protrusions and depressions on the hematite (001 surface can be explained as Fe in an adsorbed or adatom state occupying sites different from those that result from simple termination of the bulk mineral. The number of such sites varies with sample preparation history, consistent with their removal from the surface in low pH solutions.

Defect forces, defect couples and path integrals in fracture mechanics

International Nuclear Information System (INIS)

Roche, R.L.

1979-07-01

In this work, it is shown that the path integrals can be introduced without any reference to the material behavior. The method is based on the definition in a continuous medium of a set of vectors and couples having the dimension of a force or a moment. More precisely, definitions are given of volume defect forces, surface defect forces, volume defect couples, and surface defect couples. This is done with the help of the stress working variation of a particule moving through the solid. The most important result is: the resultant of all the defect forces included in a volume V is the J integral on the surface surrounding V and the moment resultant is the L integral. So these integrals are defined without any assumption on the material constitutive equation. Another result is the material form of the virtual work principle - defect forces are acting like conventional forces in the conventional principles of virtual work. This lead to the introduction of the energy momentum tensor and of the associated couple stress. Application of this method is made to fracture mechanics in studying the defect forces distribution around a crack [fr

Adhesion defective BHK cell mutant has cell surface heparan sulfate proteoglycan of altered properties

DEFF Research Database (Denmark)

Couchman, J R; Austria, R; Woods, A

1988-01-01

In the light of accumulating data that implicate cell surface heparan sulfate proteoglycans (HSPGs) with a role in cell interactions with extracellular matrix molecules such as fibronectin, we have compared the properties of these molecules in wild-type BHK cells and an adhesion-defective ricin......-resistant mutant (RicR14). Our results showed that the mutant, unlike BHK cells, cannot form focal adhesions when adherent to planar substrates in the presence of serum. Furthermore, while both cell lines possess similar amounts of cell surface HSPG with hydrophobic properties, that of RicR14 cells had decreased...... sulfation, reduced affinity for fibronectin and decreased half-life on the cell surface when compared to the normal counterpart. Our conclusions based on this data are that these altered properties may, in part, account for the adhesion defect in the ricin-resistant mutant. Whether this results from...

Unsupervised Classification of Surface Defects in Wire Rod Production Obtained by Eddy Current Sensors

Directory of Open Access Journals (Sweden)

Sergio Saludes-Rodil

2015-04-01

Full Text Available An unsupervised approach to classify surface defects in wire rod manufacturing is developed in this paper. The defects are extracted from an eddy current signal and classified using a clustering technique that uses the dynamic time warping distance as the dissimilarity measure. The new approach has been successfully tested using industrial data. It is shown that it outperforms other classification alternatives, such as the modified Fourier descriptors.

Repairing Nanoparticle Surface Defects

NARCIS (Netherlands)

Marino, Emanuele; Kodger, Thomas E.; Crisp, R.W.; Timmerman, Dolf; MacArthur, Katherine E.; Heggen, Marc; Schall, Peter

2017-01-01

Solar devices based on semiconductor nanoparticles require the use of conductive ligands; however, replacing the native, insulating ligands with conductive metal chalcogenide complexes introduces structural defects within the crystalline nanostructure that act as traps for charge carriers. We

Defect and structural imperfection effects on the electronic properties of BiTeI surfaces

International Nuclear Information System (INIS)

Fiedler, Sebastian; Seibel, Christoph; Lutz, Peter; Bentmann, Hendrik; Reinert, Friedrich; El-Kareh, Lydia; Bode, Matthias; Eremeev, Sergey V; Tereshchenko, Oleg E; Kokh, Konstantin A; Chulkov, Evgueni V; Kuznetsova, Tatyana V; Grebennikov, Vladimir I

2014-01-01

The surface electronic structure of the narrow-gap seminconductor BiTeI exhibits a large Rashba-splitting which strongly depends on the surface termination. Here we report on a detailed investigation of the surface morphology and electronic properties of cleaved BiTeI single crystals by scanning tunneling microscopy, photoelectron spectroscopy (ARPES, XPS), electron diffraction (SPA-LEED) and density functional theory calculations. Our measurements confirm a previously reported coexistence of Te- and I-terminated surface areas originating from bulk stacking faults and find a characteristic length scale of ∼100 nm for these areas. We show that the two terminations exhibit distinct types of atomic defects in the surface and subsurface layers. For electronic states resided on the I terminations we observe an energy shift depending on the time after cleavage. This aging effect is successfully mimicked by depositon of Cs adatoms found to accumulate on top of the I terminations. As shown theoretically on a microscopic scale, this preferential adsorbing behaviour results from considerably different energetics and surface diffusion lengths at the two terminations. Our investigations provide insight into the importance of structural imperfections as well as intrinsic and extrinsic defects on the electronic properties of BiTeI surfaces and their temporal stability. (paper)

Assessment of structures and stabilities of defect clusters and surface energies predicted by nine interatomic potentials for UO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Taller, Stephen A. [School of Nuclear Engineering, Purdue University, West Lafayette, IN 47907 (United States); Bai, Xian-Ming, E-mail: xianming.bai@inl.gov [Fuels Modeling and Simulation Department, Idaho National Laboratory, Idaho Falls, ID 83415 (United States)

2013-11-15

The irradiation in nuclear reactors creates many point defects and defect clusters in uranium dioxide (UO{sub 2}) and their evolution severely degrades the thermal and mechanical properties of the nuclear fuels. Previously many empirical interatomic potentials have been developed for modeling defect production and evolution in UO{sub 2}. However, the properties of defect clusters and extended defects are usually not fitted into these potentials. In this work nine interatomic potentials for UO{sub 2} are examined by using molecular statics and molecular dynamics to assess their applicability in predicting the properties of various types of defect clusters in UO{sub 2}. The binding energies and structures for these defect clusters have been evaluated for each potential. In addition, the surface energies of voids of different radii and (1 1 0) flat surfaces predicted by these potentials are also evaluated. It is found that both good agreement and significant discrepancies exist for these potentials in predicting these properties. For oxygen interstitial clusters, these potentials predict significantly different defect cluster structures and stabilities; For defect clusters consisting of both uranium and oxygen defects, the prediction is in better agreement; The surface energies predicted by these potentials have significant discrepancies, and some of them are much higher than the experimentally measured values. The results from this work can provide insight on interpreting the outcome of atomistic modeling of defect production using these potentials and may provide guidelines for choosing appropriate potential models to study problems of interest in UO{sub 2}.

X-ray fractography of fatigue fracture surface under mode I and mode III loading

International Nuclear Information System (INIS)

Akiniwa, Yoshiaki; Tanaka, Keisuke; Tsumura, Tsuyoshi

2001-01-01

The propagation behavior of a circumferential fatigue crack in cylindrical bars of a carbon steel (JIS SGV410) and a stainless steel (JIS SUS316NG) was investigated under cyclic axial and torsional loadings. The J-integral range was used as a fracture mechanics parameter. When compared at the same J-integral range, the crack propagation rate under mode III was smaller than that under mode I. Parallel markings perpendicular to the crack propagation direction were observed on the fatigue fracture surface obtained under mode III loading. The residual stresses in the radial direction, σ r , and in the tangential direction, σ θ , were measured for both mode I and mode III fatigue fracture surfaces. For mode I fracture surface, σ r was tension, and was almost constant irrespective of the applied J-integral range. σ θ was close to zero for both materials. On the other hand, for mode III, σ r and σ θ were compression. For SUS316NG steel, the compressive stress of σ θ increased with the J-integral range. For SGV410 steel, the change of σ θ with the J-integral range was small. The breadth of diffraction profiles increased with J-integral range for both mode I and III. The breadth was found to be a good parameter to evaluate the applied J-integral range. (author)

Inner-sphere, outer-sphere and ternary surface complexes: a TRLFS study of the sorption process of europium(III) onto smectite

International Nuclear Information System (INIS)

Stumpf, Th.; Fanghaenel, Th.; Bauer, A.; Kim, J.I.

2002-01-01

The surface sorption process of Eu(III) onto smectite was investigated by TRLFS in the trace concentration range. With increasing pH the formation of an inner-sphere Eu(III) surface complex was observed. The differences in the spectra and the fluorescence emission lifetimes of the surface sorbed Eu(III) in presence and absence of carbonate indicate the formation of ternary clay/Eu(III)/carbonate complexes /1/. (orig.)

Identifying apple surface defects using principal components analysis and artifical neural networks

Science.gov (United States)

Artificial neural networks and principal components were used to detect surface defects on apples in near-infrared images. Neural networks were trained and tested on sets of principal components derived from columns of pixels from images of apples acquired at two wavelengths (740 nm and 950 nm). I...

A graphical automated detection system to locate hardwood log surface defects using high-resolution three-dimensional laser scan data

Science.gov (United States)

Liya Thomas; R. Edward. Thomas

2011-01-01

We have developed an automated defect detection system and a state-of-the-art Graphic User Interface (GUI) for hardwood logs. The algorithm identifies defects at least 0.5 inch high and at least 3 inches in diameter on barked hardwood log and stem surfaces. To summarize defect features and to build a knowledge base, hundreds of defects were measured, photographed, and...

Influence of surface defects in ZnO thin films on its biosensing response characteristic

Energy Technology Data Exchange (ETDEWEB)

Saha, Shibu; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

2011-09-15

Highly c-axis oriented zinc oxide (ZnO) thin films deposited by rf magnetron sputtering under varying processing pressure (20-50 mT) in a reactive gas mixture of argon and oxygen were studied for biosensing application. The as-deposited ZnO thin films were in a state of compressive stress having defects related to interstitial Zn and antisite oxygen. Glucose oxidase has been chosen as the model enzyme in the present study and was immobilized on the surface of ZnO thin films deposited on indium tin oxide coated Corning Glass substrate. The studies reveal a correlation between the biosensing characteristic and the presence of defects in the ZnO films. The ZnO films deposited under high pressure (50 mT) are found to be more sensitive for biosensing application due to availability of more surface area for effective immobilization of biomolecules and exhibits a suitable microenvironment with good electron transfer characteristic. The obtained results highlight the importance of desired microstate besides availability of suitable native defects in the ZnO thin film for exhibiting enhanced biosensing response.

Influence of surface defects in ZnO thin films on its biosensing response characteristic

International Nuclear Information System (INIS)

Saha, Shibu; Gupta, Vinay

2011-01-01

Highly c-axis oriented zinc oxide (ZnO) thin films deposited by rf magnetron sputtering under varying processing pressure (20-50 mT) in a reactive gas mixture of argon and oxygen were studied for biosensing application. The as-deposited ZnO thin films were in a state of compressive stress having defects related to interstitial Zn and antisite oxygen. Glucose oxidase has been chosen as the model enzyme in the present study and was immobilized on the surface of ZnO thin films deposited on indium tin oxide coated Corning Glass substrate. The studies reveal a correlation between the biosensing characteristic and the presence of defects in the ZnO films. The ZnO films deposited under high pressure (50 mT) are found to be more sensitive for biosensing application due to availability of more surface area for effective immobilization of biomolecules and exhibits a suitable microenvironment with good electron transfer characteristic. The obtained results highlight the importance of desired microstate besides availability of suitable native defects in the ZnO thin film for exhibiting enhanced biosensing response.

Detection of small surface defects using DCT based enhancement approach in machine vision systems

Science.gov (United States)

He, Fuqiang; Wang, Wen; Chen, Zichen

2005-12-01

Utilizing DCT based enhancement approach, an improved small defect detection algorithm for real-time leather surface inspection was developed. A two-stage decomposition procedure was proposed to extract an odd-odd frequency matrix after a digital image has been transformed to DCT domain. Then, the reverse cumulative sum algorithm was proposed to detect the transition points of the gentle curves plotted from the odd-odd frequency matrix. The best radius of the cutting sector was computed in terms of the transition points and the high-pass filtering operation was implemented. The filtered image was then inversed and transformed back to the spatial domain. Finally, the restored image was segmented by an entropy method and some defect features are calculated. Experimental results show the proposed small defect detection method can reach the small defect detection rate by 94%.

Ion implantation and annealing studies in III-V nitrides

International Nuclear Information System (INIS)

Zolper, J.C.; Pearton, S.J.

1996-01-01

Ion implantation doping and isolation is expected to play an enabling role for the realization of advanced III-Nitride based devices. In fact, implantation has already been used to demonstrate n- and p-type doping of GaN with Si and Mg or Ca, respectively, as well as to fabricate the first GaN junction field effect transistor. Although these initial implantation studies demonstrated the feasibility of this technique for the III-Nitride materials, further work is needed to realize its full potential. After reviewing some of the initial studies in this field, the authors present new results for improved annealing sequences and defect studies in GaN. First, sputtered AlN is shown by electrical characterization of Schottky and Ohmic contacts to be an effect encapsulant of GaN during the 1,100 C implant activation anneal. The AlN suppresses N-loss from the GaN surface and the formation of a degenerate n + -surface region that would prohibit Schottky barrier formation after the implant activation anneal. Second, they examine the nature of the defect generation and annealing sequence following implantation using both Rutherford Backscattering (RBS) and Hall characterization. They show that for a Si-dose of 1 x 10 16 cm -2 50% electrical donor activation is achieved despite a significant amount of residual implantation-induced damage in the material

Online Surface Defect Identification of Cold Rolled Strips Based on Local Binary Pattern and Extreme Learning Machine

Directory of Open Access Journals (Sweden)

Yang Liu

2018-03-01

Full Text Available In the production of cold-rolled strip, the strip surface may suffer from various defects which need to be detected and identified using an online inspection system. The system is equipped with high-speed and high-resolution cameras to acquire images from the moving strip surface. Features are then extracted from the images and are used as inputs of a pre-trained classifier to identify the type of defect. New types of defect often appear in production. At this point the pre-trained classifier needs to be quickly retrained and deployed in seconds to meet the requirement of the online identification of all defects in the environment of a continuous production line. Therefore, the method for extracting the image features and the training for the classification model should be automated and fast enough, normally within seconds. This paper presents our findings in investigating the computational and classification performance of various feature extraction methods and classification models for the strip surface defect identification. The methods include Scale Invariant Feature Transform (SIFT, Speeded Up Robust Features (SURF and Local Binary Patterns (LBP. The classifiers we have assessed include Back Propagation (BP neural network, Support Vector Machine (SVM and Extreme Learning Machine (ELM. By comparing various combinations of different feature extraction and classification methods, our experiments show that the hybrid method of LBP for feature extraction and ELM for defect classification results in less training and identification time with higher classification accuracy, which satisfied online real-time identification.

Regularities of radiation defects build up on oxide materials surface; Zakonomernosti nakopleniya radiatsionnykh defektov na poverkhnosti oksidnykh materialov

Energy Technology Data Exchange (ETDEWEB)

Bitenbaev, M I; Polyakov, A I [Fiziko-Tekhnicheskij Inst., Almaty (Kazakhstan); Tuseev, T [Inst. Yadernoj Fiziki, Almaty (Kazakhstan)

2005-07-01

Analysis of experimental data by radiation defects study on different oxide elements (silicon, beryllium, aluminium, rare earth elements) irradiated by the photo-, gamma-, neutron-, alpha- radiation, protons and helium ions show, that gas adsorption process on the surface centers and radiation defects build up in metal oxide correlated between themselves. These processes were described by the equivalent kinetic equations for analysis of radiation defects build up in the different metal oxides. It was revealed in the result of the analysis: number of radiation defects are droningly increasing up to limit value with the treatment temperature growth. Constant of radicals death at ionizing radiation increases as well. Amount of surface defects in different oxides defining absorbing activity of these materials looks as: silicon oxide{yields}beryllium oxide{yields}aluminium oxide. So it was found, that most optimal material for absorbing system preparation is silicon oxide by it power intensity and berylium oxide by it adsorption efficiency.

Evaluation of Bending Strength of Carburized Gears Based on Inferential Identification of Principal Surface Layer Defects

Science.gov (United States)

Masuyama, Tomoya; Inoue, Katsumi; Yamanaka, Masashi; Kitamura, Kenichi; Saito, Tomoyuki

High load capacity of carburized gears originates mainly from the hardened layer and induced residual stress. On the other hand, surface decarburization, which causes a nonmartensitic layer, and inclusions such as oxides and segregation act as latent defects which considerably reduce fatigue strength. In this connection, the authors have proposed a formula of strength evaluation by separately quantifying defect influence. However, the principal defect which limits strength of gears with several different defects remains unclarified. This study presents a method of inferential identification of principal defects based on test results of carburized gears made of SCM420 clean steel, gears with both an artificial notch and nonmartensitic layer at the tooth fillet, and so forth. It clarifies practical uses of presented methods, and strength of carburized gears can be evaluated by focusing on principal defect size.

Study of defects near molybdenum surface using thermal desorption spectrometer

International Nuclear Information System (INIS)

Naik, P.K.

1980-01-01

Thermal desorption spectrometry is utilized to study the migration of atoms and defects near molybdenum surface. The thermal desorption spectra of inert gas ions (neon, argon and krypton) injected with various energies (430-1950 eV) into a polycrystalline molybdenum target with various dosages (6.4 x 10sup(12) - 3.9 x 10sup(14) ions/cmsup(2)) are investigated. Four different states of binding of the trapped atoms corresponding to the activation energies for desorption have been revealed from the spectra. The activation energies are found to be relatively insensitive to the species of the bombarding ion, incident ion energy and the dosage. The patterns of the spectra are strongly influenced by the mean projected range of the ions into the solid. The activation energies deduced are in good agreement with those reported for the migration of atoms and defects in molybdenum. (auth.)

Predesigned surface patterns and topological defects control the active matter.

Science.gov (United States)

Turiv, Taras; Peng, Chenhui; Guo, Yubing; Wei, Qi-Huo; Lavrentovich, Oleg

Active matter exhibits remarkable patterns of never-ending dynamics with giant fluctuations of concentration, varying order, nucleating and annihilating topological defects. These patterns can be seen in active systems of both biological and artificial origin. A fundamental question is whether and how one can control this chaotic out-of-equilibrium behavior. We demonstrate a robust control of local concentration, trajectories of active self-propelled units and the net flows of active bacteria Bacillus Substilis by imposing pre-designed surface patterns of orientational order in a water-based lyotropic chromonic liquid crystal. The patterns force the bacteria to gather into dynamic swarms with spatially modulated concentration and well-defined polarity of motion. Topological defects produce net motion of bacteria with a unidirectional circulation, while pairs of defects induce a pumping action. The qualitative features of the dynamics can be explained by interplay of curvature and activity, in particular, by ability of mixed splay-bend curvatures to generate threshold-less active flows. The demonstrated level of control opens opportunities in engineering materials and devices that mimic rich functionality of living systems. This work was supported by NSF Grants DMR-1507637, DMS-1434185, CMMI-1436565, by the Petroleum Research Grant PRF# 56046-ND7 administered by the American Chemical Society.

Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition

Science.gov (United States)

Barbagiovanni, E. G.; Strano, V.; Franzò, G.; Crupi, I.; Mirabella, S.

2015-03-01

Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (Vo) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient behaviour in the photoluminescence (PL) intensity of the two Vo states was found to be sensitive to the ambient environment and to NR post-growth treatment. The largest transient was found in samples dried on a hot plate with a PL intensity decay time, in air only, of 23 and 80 s for the 2.25 and 2.03 eV peaks, respectively. Resistance measurements under UV exposure exhibited a transient behaviour in full agreement with the PL transient, indicating a clear role of atmospheric O2 on the surface defect states. A model for surface defect transient behaviour due to band bending with respect to the Fermi level is proposed. The results have implications for a variety of sensing and photovoltaic applications of ZnO NRs.

Modeling the relationships among internal defect features and external Appalachian hardwood log defect indicators

Science.gov (United States)

R. Edward. Thomas

2009-01-01

As a hardwood tree grows and develops, surface defects such as branch stubs and wounds are overgrown. Evidence of these defects remain on the log surface for decades and in many instances for the life of the tree. As the tree grows the defect is encapsulated or grown over by new wood. During this process the appearance of the defect in the tree's bark changes. The...

The surface defect-related electroluminescence from the ZnO microwire

Energy Technology Data Exchange (ETDEWEB)

Ding Meng; Zhao Dongxu; Yao Bin; Li Binghui; Zhang Zhenzhong; Shan Chongxin; Shen Dezhen, E-mail: dxzhao2000@yahoo.com.cn [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021 (China)

2011-02-23

Surface defect-related electroluminescence (EL) was realized from a single ZnO microwire-based metal-semiconductor-metal structure on a glass substrate. ZnO microwires were successfully fabricated using a simple chemical vapour deposition approach. Schottky contacts were detected between Au electrodes and the ZnO microwire. The EL spectrum showed a broad emission band covering the visible range from 400 to 700 nm. The possible EL emission mechanism is discussed in detail in this paper.

Effect of surface contamination on osseointegration of dental implants surrounded by circumferential bone defects.

LENUS (Irish Health Repository)

Mohamed, Seif

2010-05-01

This study was designed to evaluate the effect of surface contamination on osseointegration of dental implants surrounded by a circumferential bone defect and to compare osseointegration around Osseotite with that around Nanotite implants.

Surface magnetization and the role of pattern defects in various types of ripple patterned films

International Nuclear Information System (INIS)

Colino, Jose M; Arranz, Miguel A; Barbero, Antonio J; Bollero, A; Camarero, J

2016-01-01

We present a detailed study of the magnetic properties of cobalt films with wide-area nanoscale ripple patterns, either on their surface only, or on both the film surface and substrate interface. Angular dependence vectorial-resolved magnetometry measurements and magnetic force microscopy with in situ magnetic field have been used to determine the magnetization reversal processes to correlate them to the different patterned nanostructures. All the samples show well-defined uniaxial magnetic anisotropy with the anisotropy axis lying along the ripple direction. Atomic force microscopy of the different types of pattern reveals various pattern defects: height corrugation and breaks of continuity along the ripple direction, and overlapping ripples and Y-shaped defects (pattern dislocation) across the pattern. In spite of the existence of such customary defects of erosive-regime patterns, the type of low-amplitude, surface-patterned films remarkably behave as a macrospin over almost the whole in-plane angular range (340°), with negligible spread of anisotropy axis or energy. In turn, it is found that high-amplitude surface-patterned films develop an angular distribution of anisotropy axes, probably related to the large distribution of amplitudes in a pattern of short ripples, and a significant distribution of anisotropy fields ΔH k /H k up to 15%. On the other hand, films grow on pre-patterned silicon with a significantly longer mean ripple length, and develop a larger anisotropy energy with H k up to 110 mT, probably because of the double interface effect. The switching fields close to the magnetization easy axis of all types of ripple pattern are not well reproduced by the macrospin approximation, but the observed pattern defects seem to be not responsible for the domain wall pinning that occurs with the field applied along the ripple direction. (paper)

A systematic study of ball passing frequencies based on dynamic modeling of rolling ball bearings with localized surface defects

Science.gov (United States)

Niu, Linkai; Cao, Hongrui; He, Zhengjia; Li, Yamin

2015-11-01

Ball passing frequencies (BPFs) are very important features for condition monitoring and fault diagnosis of rolling ball bearings. The ball passing frequency on outer raceway (BPFO) and the ball passing frequency on inner raceway (BPFI) are usually calculated by two well-known kinematics equations. In this paper, a systematic study of BPFs of rolling ball bearings is carried out. A novel method for accurately calculating BPFs based on a complete dynamic model of rolling ball bearings with localized surface defects is proposed. In the used dynamic model, three-dimensional motions, relative slippage, cage effects and localized surface defects are all considered. Moreover, localized surface defects are modeled accurately with consideration of the finite size of the ball, the additional clearance due to material absence, and changes of contact force directions. The reasonability of the proposed method for the prediction of dynamic behaviors of actual ball bearings with localized surface defects and for the calculation of BPFs is discussed by investigating the motion characteristics of a ball when it rolls through a defect. Parametric investigation shows that the shaft speed, external loads, the friction coefficient, raceway groove curvature factors, the initial contact angle, and defect sizes have great effects on BPFs. For a loaded ball bearing, the combination of rolling and sliding in contact region occurs, and the BPFs calculated by simple kinematical relationships are inaccurate, especially for high speed, low external load, and large initial contact angle conditions where severe skidding occurs. The hypothesis that the percentage variation of the spacing between impulses in a defective ball bearing was about 1-2% reported in previous investigations can be satisfied only for the conditions where the skidding effect in a bearing is slight. Finally, the proposed method is verified with two experiments.

Influence of surface defects on the fatigue crack initiation in pearlitic steel

Directory of Open Access Journals (Sweden)

Toribio Jesús

2014-06-01

Full Text Available Tensile fatigue tests were performed under load control, with constant stress range Δσ on pearlitic steel wires, from the hot rolled bar to the commercial prestressing steel wire (which has undergone seven cold drawing steps. Results show that fatigue cracks in pearlitic steels initiate at the wire surface starting from small defects, whose size decreases with the drawing process. Fatigue cracks created from defects (initiation phase exhibit a fractographic appearance consisting of ductile microtearing events which can be classified as tearing topography surface or TTS, and exhibit a remarkably lower spacing in the prestressing steel wire than in the hot rolled bar. In addition, some S-N tests were performed in both material forms under a stress range of about half the yield strength. In these tests, the main part of the fatigue life corresponds to the propagation stage in the hot rolled bar whereas such a main part of the life is associated with the initiation stage in the case of the prestressing steel wire.

Multifrequency eddy current examination for surface defects detection of hot steel products

International Nuclear Information System (INIS)

Hiroshima, Tatsuo; Sakamoto, Takahide; Takahashi, Akio; Miyata, Kenichi.

1985-01-01

Multifrequency eddy current testing method using probe coils has been studied for surface defects detection in hot steel products at high temperature over the magnetic Curie point. The conventional signal processing method is not available for suppression of an undesirable signal caused by lift-off variation or unevenness in inspected surfaces, because the undesirable signal pattern is similar to a defect signal pattern. In order to suppress the undesirable signal a new dual frequency signal processing method using three phase rotators has been developed, and was applied to several hot steel inspections. The results are as follows. 1. In the rotating eddy current machine for hot steel rods, the lift-off variation signal caused by a wobble of rods or the difference between rotating center and pass center of rods can be suppressed. A long seam or crack whose depth is more than 0.5mm can be detected. 2. In the hot inspection for continuously cast slabs, the signal caused by oscillation mark whose depth is under 1 mm can be suppressed. A fine transversal crack whose depth is 2 mm can be detected. 3. In the hot inspection for round billets, the lift-off variation signal caused by oval shape can be eliminated, and a crack which is deeper than 1.5 mm can be clearly detected. The detectability of defects can be improved by the analysis of dual frequency signal pattern. (author)

Antisites in III-V semiconductors: Density functional theory calculations

KAUST Repository

Chroneos, A.

2014-07-14

Density functional based simulation, corrected for finite size effects, is used to investigate systematically the formation of antisite defects in III-V semiconductors (III=Al, Ga, and In and V=P, As, and Sb). Different charge states are modelled as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III V q) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V I I I q) show a consistent decrease in formation energies with increase in group III and group V covalent radii. In general, III V q defects dominate under III-rich conditions and V I I I q under V-rich conditions. Comparison with equivalent vacancy formation energy simulations shows that while antisite concentrations are always dominant under stoichiometric conditions, modest variation in growth or doping conditions can lead to a significantly higher concentration of vacancies. © 2014 AIP Publishing LLC.

Energy Transfer between U(VI) and Eu(III) Ions Adsorbed on a Silica Surface

Energy Technology Data Exchange (ETDEWEB)

Park, K. K.; Cha, W.; Cho, H. R.; Im, H. J.; Jung, E. C.; Song, K. [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2011-05-15

Understanding of chemical behavior of actinide in a groundwater flow is important for assessing the possibility of their migration with water flows in a radioactive waste disposal site. Uranium is ubiquitous in the environment and a major actinide in a nuclear fuel cycle. Americium and curium having isotopes of long half life are minor actinides in a spent fuel. If a minor actinide coexists with uranium in a groundwater flow, some interactions between them could be expected such as minor actinide adsorption onto uranium precipitates and competition with each other for an adsorption to a mineral surface site. Eu(III) ion is frequently used as a chemical analogue of Am(III) and Cm(III) ions in a migration chemistry. The luminescent spectra of U(VI) and Eu(III) ions show a dependency on the coordination symmetry around them, and the changes in intensity or bandwidth of spectra can yield valuable information on their local environment. The luminescent lifetime also strongly depends on the coordination environment, and its measurement is valuable in probe studies on micro-heterogeneous systems. The excited U(VI) ion can be quenched through Stern.Volmer process, hydrolysis of excited species, exciplex formation, electron transfer or energy transfer. In case of U(VI)-Eu(III) system, the interaction between two ions can be studied by measuring the effect of Eu(III) ion on the quenching of U(VI) ion luminescence. There are only a few investigations on the interaction between an excited U(VI) ion and a lanthanide(III) ion. In perchlorate solution, the energy transfer to Eu(III) ion occurred only in solutions of pH>3.87. In this study, the quenching of U(VI) luminescence by Eu(III) on a silica surface was measured. The results will be discussed on the basis of a chemical interaction between them

High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of point defect and extended defect creation

International Nuclear Information System (INIS)

Sall, Mamour

2013-01-01

Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types of radiation in a wide range of energy. In AlN, initially considered insensitive to electronic excitations (Se), we have demonstrated a novel type of synergy between Se and nuclear collisions (Sn) for the creation of defects absorbing at 4.7 eV. In addition, another effect of Se is highlighted in AlN: climb of screw dislocations under the influence of Se, at high fluence. In GaN, two mechanisms can explain the creation of defects absorbing at 2.8 eV: a synergy between Se and Sn, or a creation only due to Sn but with a strong effect of the size of displacement cascades. The study, by TEM, of the effects of Se in the three materials, exhibits behaviors highly dependent on the material while they all belong to the same family with the same atomic structure. Under monoatomic ion irradiations (velocity between 0.4 and 5 MeV/u), while discontinuous tracks are observed in GaN and InN, no track is observed in AlN with the highest electronic stopping power (33 keV/nm). Only fullerene clusters produce tracks in AlN. The inelastic thermal spike model was used to calculate the energies required to produce track in AlN, GaN and InN, they are 4.2 eV/atom, 1.5 eV/atom and 0.8 eV/atom, respectively. This sensitivity difference according to Se, also occurs at high fluence. (author)

Water Adsorption on Clean and Defective Anatase TiO2 (001) Nanotube Surfaces: A Surface Science Approach.

Science.gov (United States)

Kenmoe, Stephane; Lisovski, Oleg; Piskunov, Sergei; Bocharov, Dmitry; Zhukovskii, Yuri F; Spohr, Eckhard

2018-04-11

We use ab initio molecular dynamics simulations to study the adsorption of thin water films with 1 and 2 ML coverage on anatase TiO 2 (001) nanotubes. The nanotubes are modeled as 2D slabs, which consist of partially constrained and partially relaxed structural motifs from nanotubes. The effect of anion doping on the adsorption is investigated by substituting O atoms with N and S impurities on the nanotube slab surface. Due to strain-induced curvature effects, water adsorbs molecularly on defect-free surfaces via weak bonds on Ti sites and H bonds to surface oxygens. While the introduction of an S atom weakens the interaction of the surface with water, which adsorbs molecularly, the presence of an N impurity renders the surface more reactive to water, with a proton transfer from the water film and the formation of an NH group at the N site. At 2 ML coverage, a further surface-assisted proton transfer takes place in the water film, resulting in the formation of an OH - group and an NH 2 + cationic site on the surface.

Studies of defects in the near-surface region and at interfaces using low energy positron beams

International Nuclear Information System (INIS)

Asoka-Kumar, P.

1995-01-01

Positron Annihilation Spectroscopy (PAS) is a powerful probe to study open-volume defects in solids. Its success is due to the propensity of positrons to seek out low-density regions of a solid, such as vacancies and voids, and the emissions of gamma rays from their annihilations that carry information about the local electronic environment. The development of low-energy positron beams allows probing of defects to depths of few microns, and can successfully characterize defects in the near-surface and interface regions of several technologically important systems. This review focuses on recent studies conducted on semiconductor-based systems

Studies of defects in the near-surface region and at interfaces using low energy positron beams

International Nuclear Information System (INIS)

Asoka-Kumar, P.

1997-01-01

Positron annihilation spectroscopy (PAS) is a powerful probe to study open-volume defects in solids. Its success is due to the propensity of positrons to seek out low-density regions of a solid, such as vacancies and voids, and the emissions of gamma rays from their annihilations that carry information about the local electronic environment. The development of low-energy positron beams allows probing of defects to depths of few microns, and can successfully characterize defects in the near-surface and interface regions of several technologically important systems. This review focuses on recent studies conducted on semiconductor-based systems. (author)

Influence of aspect ratio and surface defect density on hydrothermally grown ZnO nanorods towards amperometric glucose biosensing applications

Science.gov (United States)

Shukla, Mayoorika; Pramila; Dixit, Tejendra; Prakash, Rajiv; Palani, I. A.; Singh, Vipul

2017-11-01

In this work, hydrothermally grown ZnO Nanorods Array (ZNA) has been synthesized over Platinum (Pt) coated glass substrate, for biosensing applications. In-situ addition of strong oxidizing agent viz KMnO4 during hydrothermal growth was found to have profound effect on the physical properties of ZNA. Glucose oxidase (GOx) was later immobilized over ZNA by means of physical adsorption process. Further influence of varying aspect ratio, enzyme loading and surface defects on amperometric glucose biosensor has been analyzed. Significant variation in biosensor performance was observed by varying the amount of KMnO4 addition during the growth. Moreover, investigations revealed that the suppression of surface defects and aspect ratio variation of the ZNA played key role towards the observed improvement in the biosensor performance, thereby significantly affecting the sensitivity and response time of the fabricated biosensor. Among different biosensors fabricated having varied aspect ratio and surface defect density of ZNA, the best electrode resulted into sensitivity and response time to be 18.7 mA cm-2 M-1 and <5 s respectively. The observed results revealed that apart from high aspect ratio nanostructures and the extent of enzyme loading, surface defect density also hold a key towards ZnO nanostructures based bio-sensing applications.

Sub-surface defects detection of by using active thermography and advanced image edge detection

International Nuclear Information System (INIS)

Tse, Peter W.; Wang, Gaochao

2017-01-01

Active or pulsed thermography is a popular non-destructive testing (NDT) tool for inspecting the integrity and anomaly of industrial equipment. One of the recent research trends in using active thermography is to automate the process in detecting hidden defects. As of today, human effort has still been using to adjust the temperature intensity of the thermo camera in order to visually observe the difference in cooling rates caused by a normal target as compared to that by a sub-surface crack exists inside the target. To avoid the tedious human-visual inspection and minimize human induced error, this paper reports the design of an automatic method that is capable of detecting subsurface defects. The method used the technique of active thermography, edge detection in machine vision and smart algorithm. An infrared thermo-camera was used to capture a series of temporal pictures after slightly heating up the inspected target by flash lamps. Then the Canny edge detector was employed to automatically extract the defect related images from the captured pictures. The captured temporal pictures were preprocessed by a packet of Canny edge detector and then a smart algorithm was used to reconstruct the whole sequences of image signals. During the processes, noise and irrelevant backgrounds exist in the pictures were removed. Consequently, the contrast of the edges of defective areas had been highlighted. The designed automatic method was verified by real pipe specimens that contains sub-surface cracks. After applying such smart method, the edges of cracks can be revealed visually without the need of using manual adjustment on the setting of thermo-camera. With the help of this automatic method, the tedious process in manually adjusting the colour contract and the pixel intensity in order to reveal defects can be avoided. (paper)

Correlation of damage threshold and surface geometry of nodular defects in HR coatings as determined by in-situ atomic force microscopy

International Nuclear Information System (INIS)

Staggs, M.C.; Kozlowski, M.R.; Siekhaus, W.J.; Balooch, M.

1992-10-01

Atomic force microscopy (AFM) was used to determine in-situ the correlation between the surface dimensions of defects in dielectric multilayer optical coatings and their susceptibility to damage by pulsed laser illumination. The primary surface defects studied were μm-scale domes associated with the classic nodule defect. The optical film studied was a highly reflective dielectric multilayer consisting of pairs of alternating HfO 2 and SiO 2 layers of quarter wave thickness at 1.06 μm. Nodule defect height and width dimensions were measured prior to laser illumination on two different samples. Correlation between these dimensions supported a simple model for the defect geometry. Defects with high nodule heights (> 0.6 μm) were found to be most susceptible to laser damage over a range of fluences between 0-35 J/cm 2 (1.06 μm, 10 ns, and 1/e 2 diam. of 1.3 mm). Crater defects, formed by nodules ejected from the coating prior to illumination, were also studied. None of the crater defects damaged when illuminated over the same range of fluences that the nodule defects were subjected to

Evidence for vacancy migration in stage III for copper

International Nuclear Information System (INIS)

Antesberger, G.; Sonnenberg, K.; Wienhold, P.; Coltman, R.R.; Klabunde, C.E.; Williams, J.M.

1975-01-01

Specimens doped with interstitial clusters and single vacancies have been annealed isochronally through the temperature range of stage III. Combining this annealing with a test irradiation after each annealing step reactions of mobile single test interstitials with the doping defects were studied. These reactions provide information about the variation of the doping defect structure during annealing. The experimental results suggest that vacancy clusters are formed in stage III

Investigation of Near-Surface Defects Induced by Spike Rapid Thermal Annealing in c-SILICON Solar Cells

Science.gov (United States)

Liu, Guodong; Ren, Pan; Zhang, Dayong; Wang, Weiping; Li, Jianfeng

2016-01-01

The defects induced by a spike rapid thermal annealing (RTA) process in crystalline silicon (c-Si) solar cells were investigated by the photoluminescence (PL) technique and the transmission electron microscopy (TEM), respectively. Dislocation defects were found to form in the near-surface junction region of the monocrystalline Si solar cell after a spike RTA process was performed at 1100∘C. Photo J-V characteristics were measured on the Si solar cell before and after the spike RTA treatments to reveal the effects of defects on the Si cell performances. In addition, the Silvaco device simulation program was used to study the effects of defects density on the cell performances by fitting the experimental data of RTA-treated cells. The results demonstrate that there was an obvious degradation in the Si solar cell performances when the defect density after the spike RTA treatment was above 1×1013cm-3.

Influence of crystal orientation on the formation of femtosecond laser-induced periodic surface structures and lattice defects accumulation

Energy Technology Data Exchange (ETDEWEB)

Sedao, Xxx; Garrelie, Florence, E-mail: florence.garrelie@univ-st-etienne.fr; Colombier, Jean-Philippe; Reynaud, Stéphanie; Pigeon, Florent [Université de Lyon, CNRS, UMR5516, Laboratoire Hubert Curien, Université de Saint Etienne, Jean Monnet, F-42023 Saint-Etienne (France); Maurice, Claire; Quey, Romain [Ecole Nationale Supérieure des Mines de Saint-Etienne, CNRS, UMR5307, Laboratoire Georges Friedel, F-42023 Saint-Etienne (France)

2014-04-28

The influence of crystal orientation on the formation of femtosecond laser-induced periodic surface structures (LIPSS) has been investigated on a polycrystalline nickel sample. Electron Backscatter Diffraction characterization has been exploited to provide structural information within the laser spot on irradiated samples to determine the dependence of LIPSS formation and lattice defects (stacking faults, twins, dislocations) upon the crystal orientation. Significant differences are observed at low-to-medium number of laser pulses, outstandingly for (111)-oriented surface which favors lattice defects formation rather than LIPSS formation.

Surface Modification and Planar Defects of Calcium Carbonates by Magnetic Water Treatment

Directory of Open Access Journals (Sweden)

Yeh MS

2010-01-01

Full Text Available Abstract Powdery calcium carbonates, predominantly calcite and aragonite, with planar defects and cation–anion mixed surfaces as deposited on low-carbon steel by magnetic water treatment (MWT were characterized by X-ray diffraction, electron microscopy, and vibration spectroscopy. Calcite were found to form faceted nanoparticles having 3x ( commensurate superstructure and with well-developed { } and { } surfaces to exhibit preferred orientations. Aragonite occurred as laths having 3x ( commensurate superstructure and with well-developed ( surface extending along [100] direction up to micrometers in length. The (hkil-specific coalescence of calcite and rapid lath growth of aragonite under the combined effects of Lorentz force and a precondensation event account for a beneficial larger particulate/colony size for the removal of the carbonate scale from the steel substrate. The coexisting magnetite particles have well-developed {011} surfaces regardless of MWT.

Interaction of hydrogen and oxygen with bulk defects and surfaces of metals

International Nuclear Information System (INIS)

Besenbacher, F.

1994-05-01

The thesis deals with the interaction of hydrogen with defects in metals and the interaction of hydrogen and oxygen with metal surfaces studied by ion-beam techniques and scanning tunneling microscopy (STM), respectively. The first part of the thesis discusses the interaction of hydrogen with simple defects in transition metals. The trap-binding enthalpies and the lattice location of hydrogen trapped to vacancies have been determined, and an extremely simple and versatile picture of the hydrogen-metal interaction has evolved, in which the trap strength is mainly determined by the local electron density. Any dilution of the lattice will lead to a trap, vacancies and voids being the strongest trap. It is found that hydrogen trapped to vacancies in fcc metals is quantum-mechanically delocalized, and the excitation energies for the hydrogen in the vacancy potential are a few MeV only. The interaction of hydrogen with metal surfaces is studied by the transmission channeling (TC) technique. It is found that hydrogen chemisorbs in the highest-coordinated sites on the surfaces, and that there is a direct relationship between the hydrogen-metal bond length and the coordination number for the hydrogen. In the final part of the thesis the dynamics of the chemisorption process for oxygen and hydrogen on metal surfaces is studied by STM, a fascinating and powerful technique for exploring the atomic-scale realm of surfaces. It is found that there is a strong coupling between the chemisorption process and the distortion of the metal surface. The adsorbates induce a surface reconstruction, i.e. metal-metal bond breaks and metal-adsorbate bounds form. Whereas hydrogen interacts weakly with the metals and induces reconstructions where only nnn metals bonds are broken, oxygen interacts strongly with the metal, and the driving force for the O-induced reconstructions appears to be the formation of low-coordinated metal-O rows, formed by breaking of nn metal bonds. Finally it is shown

Detecting wood surface defects with fusion algorithm of visual saliency and local threshold segmentation

Science.gov (United States)

Wang, Xuejuan; Wu, Shuhang; Liu, Yunpeng

2018-04-01

This paper presents a new method for wood defect detection. It can solve the over-segmentation problem existing in local threshold segmentation methods. This method effectively takes advantages of visual saliency and local threshold segmentation. Firstly, defect areas are coarsely located by using spectral residual method to calculate global visual saliency of them. Then, the threshold segmentation of maximum inter-class variance method is adopted for positioning and segmenting the wood surface defects precisely around the coarse located areas. Lastly, we use mathematical morphology to process the binary images after segmentation, which reduces the noise and small false objects. Experiments on test images of insect hole, dead knot and sound knot show that the method we proposed obtains ideal segmentation results and is superior to the existing segmentation methods based on edge detection, OSTU and threshold segmentation.

An Analytical Model for Prediction of Magnetic Flux Leakage from Surface Defects in Ferromagnetic Tubes

Directory of Open Access Journals (Sweden)

Suresh V.

2016-02-01

Full Text Available In this paper, an analytical model is proposed to predict magnetic flux leakage (MFL signals from the surface defects in ferromagnetic tubes. The analytical expression consists of elliptic integrals of first kind based on the magnetic dipole model. The radial (Bz component of leakage fields is computed from the cylindrical holes in ferromagnetic tubes. The effectiveness of the model has been studied by analyzing MFL signals as a function of the defect parameters and lift-off. The model predicted results are verified with experimental results and a good agreement is observed between the analytical and the experimental results. This analytical expression could be used for quick prediction of MFL signals and also input data for defect reconstructions in inverse MFL problem.

Defect inspection in hot slab surface: multi-source CCD imaging based fuzzy-rough sets method

Science.gov (United States)

Zhao, Liming; Zhang, Yi; Xu, Xiaodong; Xiao, Hong; Huang, Chao

2016-09-01

To provide an accurate surface defects inspection method and make the automation of robust image region of interests(ROI) delineation strategy a reality in production line, a multi-source CCD imaging based fuzzy-rough sets method is proposed for hot slab surface quality assessment. The applicability of the presented method and the devised system are mainly tied to the surface quality inspection for strip, billet and slab surface etcetera. In this work we take into account the complementary advantages in two common machine vision (MV) systems(line array CCD traditional scanning imaging (LS-imaging) and area array CCD laser three-dimensional (3D) scanning imaging (AL-imaging)), and through establishing the model of fuzzy-rough sets in the detection system the seeds for relative fuzzy connectedness(RFC) delineation for ROI can placed adaptively, which introduces the upper and lower approximation sets for RIO definition, and by which the boundary region can be delineated by RFC region competitive classification mechanism. For the first time, a Multi-source CCD imaging based fuzzy-rough sets strategy is attempted for CC-slab surface defects inspection that allows an automatic way of AI algorithms and powerful ROI delineation strategies to be applied to the MV inspection field.

Echo detected EPR as a tool for detecting radiation-induced defect signals in pottery

International Nuclear Information System (INIS)

Zoleo, Alfonso; Bortolussi, Claudia; Brustolon, Marina

2011-01-01

Archaeological fragments of pottery have been investigated by using CW-EPR and Echo Detected EPR (EDEPR). EDEPR allows to remove the CW-EPR dominant Fe(III) background spectrum, hiding much weaker signals potentially useful for dating purpose. EDEPR spectra attributed to a methyl radical and to feldspar defects have been recorded at room and low temperature for an Iron Age cooking ware (700 B.C.). A study on the dependence of EDEPR intensity over absorbed dose on a series of γ-irradiated brick samples (estimated age of 562 ± 140 B.C.) has confirmed the potential efficacy of the proposed method for spotting defect signals out of the strong iron background. - Highlights: → Fe(III) CW-EPR signals cover CW-EPR-detectable defects in ceramics. → Echo detected EPR gets rid of Fe(III) signals, disclosing defect signals. → Echo detected EPR detects defect signals even at relatively low doses.

Noncontact AFM Imaging of Atomic Defects on the Rutile TiO2 (110) Surface

DEFF Research Database (Denmark)

Lauritsen, Jeppe Vang

2015-01-01

The atomic force microscope (AFM) operated in the noncontact mode (nc-AFM) offers a unique tool for real space, atomic-scale characterisation of point defects and molecules on surfaces, irrespective of the substrate being electrically conducting or non-conducting. The nc-AFM has therefore in rece...

Transport of surface-modified iron nanoparticle in porous media and application to arsenic(III) remediation

International Nuclear Information System (INIS)

Kanel, Sushil Raj; Nepal, Dhriti; Manning, Bruce; Choi, Heechul

2007-01-01

The surface-modified iron nanoparticles (S-INP) were synthesized, characterized and tested for the remediation of arsenite (As(III)), a well known toxic groundwater contaminant of concern. The S-INP material was fully dispersed in the aqueous phase with a particle size distribution of 2-10 nm estimated from high-resolution transmission electron microscopy (HR-TEM). X-ray photoelectron spectroscopy (XPS) revealed that an Fe(III) oxide surface film was present on S-INP in addition to the bulk zero-valent Fe 0 oxidation state. Transport of S-INP through porous media packed in 10 cm length column showed particle breakthroughs of 22.1, 47.4 and 60 pore volumes in glass beads, unbaked sand, and baked sand, respectively. Un-modified INP was immobile and aggregated on porous media surfaces in the column inlet area. Results using S-INP pretreated 10 cm sand-packed columns containing ∼2 g of S-INP showed that 100 % of As(III) was removed from influent solutions (flow rate 1.8 mL min -1 ) containing 0.2, 0.5 and 1.0 mg L -1 As(III) for 9, 7 and 4 days providing 23.3, 20.7 and 10.4 L of arsenic free water, respectively. In addition, it was found that 100% of As(III) in 0.5 mg/L solution (flow rate 1.8 mL min -1 ) was removed by S-INP pretreated 50 cm sand packed column containing 12 g of S-INP for more than 2.5 months providing 194.4 L of arsenic free water. Field emission scanning electron microscopy (FE-SEM) showed S-INP had transformed to elongated, rod-like shaped corrosion product particles after reaction with As(III) in the presence of sand. These results suggest that S-INP has great potential to be used as a mobile, injectable reactive material for in-situ sandy groundwater aquifer treatment of As(III)

A novel method for surface defect inspection of optic cable with short-wave infrared illuminance

Science.gov (United States)

Chen, Xiaohong; Liu, Ning; You, Bo; Xiao, Bin

2016-07-01

Intelligent on-line detection of cable quality is a crucial issue in optic cable factory, and defects on the surface of optic cable can dramatically depress cable grade. Manual inspection in optic cable quality cannot catch up with the development of optic cable industry due to its low detection efficiency and huge human cost. Therefore, real-time is highly demanded by industry in order to replace the subjective and repetitive process of manual inspection. For this reason, automatic cable defect inspection has been a trend. In this paper, a novel method for surface defect inspection of optic cable with short-wave infrared illuminance is presented. The special condition of short-wave infrared cannot only provide illumination compensation for the weak illumination environment, but also can avoid the problem of exposure when using visible light illuminance, which affects the accuracy of inspection algorithm. A series of image processing algorithms are set up to analyze cable image for the verification of real-time and veracity of the detection method. Unlike some existing detection algorithms which concentrate on the characteristics of defects with an active search way, the proposed method removes the non-defective areas of the image passively at the same time of image processing, which reduces a large amount of computation. OTSU algorithm is used to convert the gray image to the binary image. Furthermore, a threshold window is designed to eliminate the fake defects, and the threshold represents the considered minimum size of defects ε . Besides, a new regional suppression method is proposed to deal with the edge burrs of the cable, which shows the superior performance compared with that of Open-Close operation of mathematical morphological in the boundary processing. Experimental results of 10,000 samples show that the rates of miss detection and false detection are 2.35% and 0.78% respectively when ε equals to 0.5 mm, and the average processing period of one frame

Analysis of defects near the surface and the interface of semiconductors by monoenergetic positron beam

International Nuclear Information System (INIS)

Uedono, Akira; Tanigawa, Shoichiro

1989-01-01

A monoenergetic low-speed positron beam line is constructed and a study is made on defects near the surface and the interface of semiconductors by using the beam line. Sodium-22 is used as beam source. Ion implantation, though being an essential technique for semiconductor integrated circuit production, can introduce lattice defects, affecting the yield and reliability of the resultant semiconductor devices. Some observations are made on the dependence of the Doppler broadening on the depth, and the ΔS-E relationship in P + -ion implanted SiO 2 (43nm)-Si. These observations demonstrate that monoenergetic positron beam is useful to detect hole-type defects resulting from ion implantation over a very wide range of defect density. Another study is made for the detection of defects near an interface. Positrons are expected to drift when left in an electric field with a gradient. Observations made here show that positrons can be concentrated at any desired interface by introducing an electric field intensity gradient in the oxide. This process also serves for accurate measurement of the electronic structure at the interface, and the effect of ion implantation and radiations on the interface. (N.K.)

Family of defect-dicubane Ni4Ln2 (Ln = Gd, Tb, Dy, Ho) and Ni4Y2 complexes: rare Tb(III) and Ho(III) examples showing SMM behavior.

Science.gov (United States)

Zhao, Lang; Wu, Jianfeng; Ke, Hongshan; Tang, Jinkui

2014-04-07

Reactions of Ln(III) perchlorate (Ln = Gd, Tb, Dy, and Ho), NiCl2·6H2O, and a polydentate Schiff base resulted in the assembly of novel isostructural hexanuclear Ni4Ln2 complexes [Ln = Gd (1), Tb (2), Dy (3), Ho (4)] with an unprecedented 3d-4f metal topology consisting of two defect-dicubane units. The corresponding Ni4Y2 (5) complex containing diamagnetic Y(III) atoms was also isolated to assist the magnetic studies. Interestingly, complexes 2 and 3 exhibit SMM characteristics and 4 shows slow relaxation of the magnetization. The absence of frequency-dependent in-phase and out-of-phase signals for the Ni-Y species suggests that the Ln ions' contribution to the slow relaxation must be effectual as previously observed in other Ni-Dy samples. However, the observation of χ″ signals with zero dc field for the Ni-Tb and Ni-Ho derivatives is notable. Indeed, this is the first time that such a behavior is observed in the Ni-Tb and Ni-Ho complexes.

Defect detection using transient thermography

International Nuclear Information System (INIS)

Mohd Zaki Umar; Ibrahim Ahmad; Ab Razak Hamzah; Wan Saffiey Wan Abdullah

2008-08-01

An experimental research had been carried out to study the potential of transient thermography in detecting sub-surface defect of non-metal material. In this research, eight pieces of bakelite material were used as samples. Each samples had a sub-surface defect in the circular shape with different diameters and depths. Experiment was conducted using one-sided Pulsed Thermal technique. Heating of samples were done using 30 kWatt adjustable quartz lamp while infra red (IR) images of samples were recorded using THV 550 IR camera. These IR images were then analysed with ThermofitTMPro software to obtain the Maximum Absolute Differential Temperature Signal value, ΔΤ m ax and the time of its appearance, τ m ax (ΔΤ). Result showed that all defects were able to be detected even for the smallest and deepest defect (diameter = 5 mm and depth = 4 mm). However the highest value of Differential Temperature Signal (ΔΤ m ax), were obtained at defect with the largest diameter, 20 mm and at the shallowest depth, 1 mm. As a conclusion, the sensitivity of the pulsed thermography technique to detect sub-surface defects of bakelite material is proportionately related with the size of defect diameter if the defects are at the same depth. On the contrary, the sensitivity of the pulsed thermography technique inversely related with the depth of defect if the defects have similar diameter size. (Author)

Polarity Control in Group-III Nitrides beyond Pragmatism

Science.gov (United States)

Mohn, Stefan; Stolyarchuk, Natalia; Markurt, Toni; Kirste, Ronny; Hoffmann, Marc P.; Collazo, Ramón; Courville, Aimeric; Di Felice, Rosa; Sitar, Zlatko; Vennéguès, Philippe; Albrecht, Martin

2016-05-01

Controlling the polarity of polar semiconductors on nonpolar substrates offers a wealth of device concepts in the form of heteropolar junctions. A key to realize such structures is an appropriate buffer-layer design that, in the past, has been developed by empiricism. GaN or ZnO on sapphire are prominent examples for that. Understanding the basic processes that mediate polarity, however, is still an unsolved problem. In this work, we study the structure of buffer layers for group-III nitrides on sapphire by transmission electron microscopy as an example. We show that it is the conversion of the sapphire surface into a rhombohedral aluminum-oxynitride layer that converts the initial N-polar surface to Al polarity. With the various AlxOyNz phases of the pseudobinary Al2O3 -AlN system and their tolerance against intrinsic defects, typical for oxides, a smooth transition between the octahedrally coordinated Al in the sapphire and the tetrahedrally coordinated Al in AlN becomes feasible. Based on these results, we discuss the consequences for achieving either polarity and shed light on widely applied concepts in the field of group-III nitrides like nitridation and low-temperature buffer layers.

Optical and Temporal Carrier Dynamics Investigations of III-Nitrides for Semiconductor Lighting

KAUST Repository

Ajia, Idris A.

2018-05-22

III-nitride semiconductors suffer significant efficiency limitations; ‘efficiency’ being an umbrella term that covers an extensive list of challenges that must be overcome if they are to fulfil their vast potential. To this end, it is imperative to understand the underlying phenomena behind such limitations. In this dissertation, I combine powerful optical and structural characterization techniques to investigate the effect of different defects on the carrier dynamics in III-nitride materials for light emitting devices. The results presented herein will enhance the current understanding of the carrier mechanisms in such devices, which will lead to device efficiency improvements. In the first part of this dissertation, the effects of some important types of crystal defects present in III-nitride structures are investigated. Here, two types of defects are studied in two different III-nitride-based light emitting structures. The first defects of interest are V-pit defects in InGaN/GaN multiple quantum well (MQW) blue LEDs, where their contribution to the high-efficiency of such LEDs is discussed. In addition, the effect of these defects on the efficiency droop phenomenon in these LEDs is elucidated. Secondly, the optical effects of grain boundary defects in AlN-rich AlGaN/AlGaN MQWs is studied. In this study, it is shown that grain boundary defects may result in abnormal carrier localization behavior in these deep ultraviolet (UV) structures. While both defects are treated individually, it is evident from these studies that threading dislocation (TD) defects are an underlying contributor to the more undesirable outcomes of the said defects. In the second part, the dissertation reports on the carrier dynamics of III-nitride LED structures grown on emerging substrates—as possible efficiency enhancing techniques—aimed at mitigating the effects of TD defects. Thus, the carrier dynamics of GaN/AlGaN UV MQWs grown, for the first time, on (2̅01) – oriented β-Ga2O

The role of surface defects in HOPG on the electrochemical and physical deposition of Ag

Directory of Open Access Journals (Sweden)

R. PETROVIC

1999-08-01

Full Text Available The role of defects on a substrate surface during the initial stages of nucleation and growth of Ag deposited electrochemically and physically on highly oriented pyrolytic graphite (HOPG has been observed ex situ by scanning tunneling microscopy (STM. The silver was electrodeposited under current controlled electrochemical conditions at 26 µA/cm2, which corresponded to a deposition rate of 0.1 monolayers (ML per second. For comparison, physical deposition of Ag on HOPG was performed by DC Ar+ ion sputtering, at the same deposition rate and for the same deposition times. In both cases, Ag grows in an island growth mode, but the distribution of the islands appears to be quite different. In physical deposition, the Ag islands are almost homogeneously distributed over the substrate surface and a slight accumulation of islands on steps does not contribute significantly to the overall morphology. This indicates the crucial role of point defects on the substrate in the initial stages of nucleation. In electrochemical deposition, more lined defects are observed after a flow of current, and their role in the beginning of the nucleation is more pronounced. Lined defects are responsible for the string-like shaped domains of deposited atoms. Also, the existence of string-like shaped nucleation exclusion zones is indicated. The problem of the formation of nucleation exclusion zones, which appear only in electrochemical deposition, has been reconsidered and a new explanaton of their formation is given. A mathematical model for the calculation of the radius of the nucleation exclusion zone has been developed.

Investigation of defects in ultra-thin Al{sub 2}O{sub 3} films deposited on pure copper by the atomic layer deposition technique

Energy Technology Data Exchange (ETDEWEB)

Chang, M.L.; Wang, L.C. [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Lin, H.C., E-mail: hclinntu@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Chen, M.J., E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Lin, K.M. [Department of Materials Science and Engineering, Feng Chia University, No. 100, Wenhwa Road, Seatwen, Taichung 40724, Taiwan (China)

2015-12-30

Graphical abstract: Some residual OH ligands originating from incomplete reaction between TMA and surface species of OH* during ALD process induce the defects in deposited Al{sub 2}O{sub 3} films. Three possible types of defects are suggested. The analytic results indicate the defects are Type-I and/or Type-II but do not directly expose the substrate, like pinholes (Type-III). - Highlights: • Oxidation trials were conducted to investigate the defects in ultra-thin Al{sub 2}O{sub 3} films deposited ALD technique on pure copper. • The residual OH ligands in the deposited Al{sub 2}O{sub 3} films induce looser micro-structure which has worse oxidation resistance. • Superficial contamination particles on substrate surface are confirmed to be one of nucleation sites of the defects. - Abstract: Al{sub 2}O{sub 3} films with various thicknesses were deposited by the atomic layer deposition (ALD) technique on pure copper at temperatures of 100–200 °C. Oxidation trials were conducted in air at 200 °C to investigate the defects in these films. The analytic results show that the defects have a looser micro-structure compared to their surroundings, but do not directly expose the substrate, like pinholes. The film's crystallinity, mechanical properties and oxidation resistance could also be affected by these defects. Superficial contamination particles on the substrate surface are confirmed to be nucleation sites of the defects. A model for the mechanism of defect formation is proposed in this study.

Photographic guide of selected external defect indicators and associated internal defects in sugar maple

Science.gov (United States)

Everette D. Rast; John A. Beaton; David L. Sonderman

1991-01-01

To properly classify or grade logs or trees, one must be able to correctly identify defect indicators and assess the effect of the underlying defect on possible end products. This guide assists the individual in identifying the surface defect indicator and shows the progressive stages of the defect throughout its development for sugar maple. Eleven types of external...

Photographic guide of selected external defect indicators and associated internal defects in yellow-poplar

Science.gov (United States)

Everette D. Rast; John A. Beaton; David L. Sonderman

1991-01-01

To properly classify or grade logs or trees, one must be able to correctly identify defect indicators and assess the effect of the underlying defect on possible end products. This guide assists the individual in identifying the surface defect indicator and shows the progressive stages of the defect throughout its development for yellow-poplar. Twelve types of external...

Photographic guide of selected external defect indicators and associated internal defects in yellow birch

Science.gov (United States)

Everette D. Rast; John A. Beaton; David L. Sonderman

1991-01-01

To properly classify or grade logs or trees, one must be able to correctly identify defect indicators and assess the effect of the underlying defect on possible end products. This guide assists the individual in identifying the surface defect indicator and shows the progressive stages of the defect throughout its development for yellow birch. Eleven types of external...

Association between patellar cartilage defects and patellofemoral geometry: a matched-pair MRI comparison of patients with and without isolated patellar cartilage defects.

Science.gov (United States)

Mehl, Julian; Feucht, Matthias J; Bode, Gerrit; Dovi-Akue, David; Südkamp, Norbert P; Niemeyer, Philipp

2016-03-01

To compare the geometry of the patellofemoral joint on magnetic resonance images (MRI) between patients with isolated cartilage defects of the patella and a gender- and age-matched control group of patients without patellar cartilage defects. A total of 43 patients (17 female, 26 male) with arthroscopically verified grade III and IV patellar cartilage defects (defect group) were compared with a matched-pair control group of patients with isolated traumatic rupture of the anterior cruciate ligament without cartilage defects of the patellofemoral joint. Preoperative MRI images were analysed retrospectively with regard to patellar geometry (width, thickness, facet angle), trochlear geometry (dysplasia according to Dejour, sulcus angle, sulcus depth, lateral condyle index, trochlea facet asymmetry, lateral trochlea inclination) and patellofemoral alignment (tibial tuberosity-trochlear groove distance, patella height, lateral patella displacement, lateral patellofemoral angle, patella tilt, congruence angle). In addition to the comparison of group values, the measured values were compared to normal values reported in the literature, and the frequency of patients with pathologic findings was compared between both groups. The defect group demonstrated a significantly higher proximal chondral sulcus angle (p patellofemoral joint. In particular, a flat and shallow trochlea, trochlea dysplasia and patella alta seem to contribute to the development of patellar cartilage defects, which must be taken into consideration when planning to do surgical cartilage repair at the patella. III.

In-plane confinement and waveguiding of surface acoustic waves through line defects in pillars-based phononic crystal

Directory of Open Access Journals (Sweden)

Abdelkrim Khelif

2011-12-01

Full Text Available We present a theoretical analysis of an in-plane confinement and a waveguiding of surface acoustic waves in pillars-based phononic crystal. The artificial crystal is made up of cylindrical pillars placed on a semi-infinite medium and arranged in a square array. With a well-chosen of the geometrical parameters, this pillars-based system can display two kinds of complete band gaps for guided waves propagating near the surface, a low frequency gap based on locally resonant mode of pillars as well as a higher frequency gap appearing at Bragg scattering regime. In addition, we demonstrate a waveguiding of surface acoustic wave inside an extended linear defect created by removing rows of pillars in the perfect crystal. We discuss the transmission and the polarization of such confined mode appearing in the higher frequency band gap. We highlight the strong similarity of such defect mode and the Rayleigh wave of free surface medium. An efficient finite element analysis is used to simulate the propagation of guided waves through silicon pillars on a silicon substrate.

III-V semiconductors for photoelectrochemical applications: surface preparation and characterization

Energy Technology Data Exchange (ETDEWEB)

Fertig, Dominic; Schaechner, Birgit; Calvet, Wofram; Kaiser, Bernhard; Jaegermann, Wolfram [TU Darmstadt, Fachbereich Materialwissenschaft, Fachgebiet Oberflaechenforschung (Germany)

2011-07-01

III-V semiconductors are promising reference systems for photoelectrochemical energy conversion. Therefore we have studied the influence of different acids and acidic solutions on the etching of p-doped gallium-arsenide and gallium-phosphide single crystal surfaces. From our experiments we conclude, that etching with HCl and subsequent annealing up to 450 C gives the best results for the removal of the carbonates and the oxides without affecting the quality of the sample. By treating the surfaces with ''piranha''-solution (H{sub 2}SO{sub 4}:H{sub 2}O{sub 2}:H{sub 2}O/7:2:1), the creation of an oxide layer with well defined thickness can be achieved. For the creation of an efficient photoelectrochemical cell, Pt nanoparticles have been deposited from solution. These surfaces are then characterized by photoelectron spectroscopy and AFM. Further electrochemical measurements try to correlate the effect of the surface cleaning and the Pt deposition on the photoactivity of the GaAs- and GaP-semiconductors.

Lumber defect detection by ultrasonics

Science.gov (United States)

K. A. McDonald

1978-01-01

Ultrasonics, the technology of high-frequency sound, has been developed as a viable means for locating most defects In lumber for use in digital form in decision-making computers. Ultrasonics has the potential for locating surface and internal defects in lumber of all species, green or dry, and rough sawn or surfaced.

Strained interface defects in silicon nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Lee, Benjamin G.; Stradins, Paul [National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO (United States); Hiller, Daniel; Zacharias, Margit [IMTEK - Faculty of Engineering, Albert-Ludwigs-University Freiburg (Germany); Luo, Jun-Wei; Beard, Matthew C. [Chemical and Materials Science, National Renewable Energy Laboratory, Golden, CO (United States); Semonin, Octavi E. [Chemical and Materials Science, National Renewable Energy Laboratory, Golden, CO (United States); Department of Physics, University of Colorado, Boulder, CO (United States)

2012-08-07

The surface of silicon nanocrystals embedded in an oxide matrix can contain numerous interface defects. These defects strongly affect the nanocrystals' photoluminescence efficiency and optical absorption. Dangling-bond defects are nearly eliminated by H{sub 2} passivation, thus decreasing absorption below the quantum-confined bandgap and enhancing PL efficiency by an order of magnitude. However, there remain numerous other defects seen in absorption by photothermal deflection spectroscopy; these defects cause non-radiative recombination that limits the PL efficiency to <15%. Using atomistic pseudopotential simulations, we attribute these defects to two specific types of distorted bonds: Si-Si and bridging Si-O-Si bonds between two Si atoms at the nanocrystal surface. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Discrimination of defects in III-V semiconductors by positron lifetime distribution

CERN Document Server

Chen, Z Q; Wang, S J

2000-01-01

In this paper, the numerical Laplace inversion technique and maximum entropy method are utilized to extract continuous positron lifetime distribution in semiconductors. The result is used to discriminate the native vacancy-type defects in as-grown GaAs and In P with different conduction type. Direct evidence of shallow positron traps were also observed in ion-implanted p-In P. It is demonstrated that the lifetime distribution can give us more detailed information on the native defects.

Prevention of burn-on defect on surface of hydroturbine blade casting of ultra-low-carbon refining stainless steel

Directory of Open Access Journals (Sweden)

Li Ling

2008-08-01

Full Text Available The burn-on sand is common surface defect encountered in CO2-cured silicate-bonded sand casting of hydroturbine blade of ultra-low-carbon martensitic stainless steel, its feature, causes and prevention measures are presented in this paper. Experiments showed that the burn-on defect is caused by oxidization of chromium in the molten steel at high temperature and can be effectively eliminated by using chromium-corundum coating.

Imaging of surfaces and defects of crystals. Progress report, May 1, 1978--April 30, 1979

International Nuclear Information System (INIS)

Cowley, J.M.

1979-04-01

The possibility of obtaining electron diffraction patterns from very small specimen regions combined with high resolution imaging by use of scanning transmission electron microscopy (STEM) allows the detailed study of small nuclei of reaction products or of crystal defects. The capabilities of this method have been extended by the design and construction of a TV system for the viewing and recording of microdiffraction patterns from our STEM instrument so that clear patterns can be obtained from regions as small as 10A in diameter. This system has been applied to the study of initial stages of oxidation of chromium films, revealing the presence of very small oxide nuclei and identifying these crystals as having a previously unsuspected spinel structure. The further stages of growth of oxides on chromium are being investigated. Initial results have also been obtained on the surface structure of oxides such as MgO. The extension of previous work on the diffraction from, and imaging of crystal surfaces by the use of medium-to-low energy electrons (15 to 1 keV) has allowed a much more complete understanding of the contrast-producing mechanisms. Application to the study of pyrolytic graphite surfaces has given a clear picture of the mosaic structure and defect distribution and provided a basis for the more reliable and quantitative general use of these techniques in surface structure analysis

Time Localisation of Surface Defects on Optical Discs

DEFF Research Database (Denmark)

Odgaard, Peter Fogh; Wickerhauser, M.V.

Many have experienced problems with their Compact Disc player when a disc with a scratch or a finger print is tried played. One way to improve the playability of discs with such a defect, is to locate the defect in time and then handle it in a special way. As a consequence this time localisation...

Time Localisation of Surface Defects on Optical Discs

DEFF Research Database (Denmark)

Odgaard, Peter Fogh; Wickerhauser, M.V.

2004-01-01

Many have experienced problems with their Compact Disc Player when a disc with a scratch or a fingerprint is tried played. One way to improve the playability of discs with such a defect, is to locate the defect in time and then handle it in a special way. As a consequence this time localization...

The Effect of Growth Temperature and V/III Flux Ratio of MOCVD Antimony Based Semiconductors on Growth Rate and Surface Morphology

Directory of Open Access Journals (Sweden)

Ramelan Ari Handono

2017-01-01

Full Text Available Epitaxial Alx Ga1-x Sb layers on GaSb and GaAs substrates have been grown by atmospheric pressure metalorganic chemical vapor deposition using TMAl, TMGa and TMSb. Nomarski microscope and a profiler were employed to examine the surface morphology and growth rate of the samples. We report the effect of growth temperature and V/III flux ratio on growth rate and surface morphology. Growth temperatures in the range of 520°C and 680°C and V/III ratios from 1 to 5 have been investigated. A growth rate activation energy of 0.73 eV was found. At low growth temperatures between 520 and 540°C, the surface morphology is poor due to antimonide precipitates associated with incomplete decomposition of the TMSb. For layers grown on GaAs at 580°C and 600°C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580°C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-type conductivity with smooth surface morphology

Anomalous Quasiparticle Symmetries and Non-Abelian Defects on Symmetrically Gapped Surfaces of Weak Topological Insulators.

Science.gov (United States)

Mross, David F; Essin, Andrew; Alicea, Jason; Stern, Ady

2016-01-22

We show that boundaries of 3D weak topological insulators can become gapped by strong interactions while preserving all symmetries, leading to Abelian surface topological order. The anomalous nature of weak topological insulator surfaces manifests itself in a nontrivial action of symmetries on the quasiparticles; most strikingly, translations change the anyon types in a manner impossible in strictly 2D systems with the same symmetry. As a further consequence, screw dislocations form non-Abelian defects that trap Z_{4} parafermion zero modes.

Speciation of Am(III)/Eu(III) sorbed on γ-alumina. Effect of metal ion concentration

International Nuclear Information System (INIS)

Kumar, S.; Tomar, B.S.; Godbole, S.V.

2013-01-01

The present paper describes the speciation of Am(III)/Eu(III) sorbed on γ-alumina, and its evolution with changing metal ion concentration, studied using batch sorption experiment, time resolved fluorescence spectroscopy (TRFS), extended X-ray absorption fine structure (EXAFS) and surface Complexation modeling (SCM). Though numerous studies exist in the literature on the speciation of trivalent actinides and lanthanides on alumina surface, the mechanism of sorption at high metal ion concentrations is not yet fully understood. Batch sorption experiments of Am(III) on γ-alumina under varying condition of pH (3-10), ionic strength (0.005-0.1 M NaClO 4 ) and metal ion concentration (10 -7 -10 -4 M) were performed. Higher metal ion concentration was achieved by the addition of Eu(III) considering it as an analogue of Am(III). Time resolved fluorescence spectroscopy (TRFS) study of Eu(III) sorbed on γ-alumina at the metal ion concentration of 5.0 x 10 -5 M was carried out over pH 4 to 7. TRFS showed the presence of two surface species, with distinctly different fluorescence decay life times. The shorter lifetime value and its changing pattern with pH indicate the surface species corresponding to this component to be monodentate species > AlOAm 2+ and its hydrolyzed forms. The sorbed Eu 3+ species corresponding to the longer lifetime value has 2-3 water molecules in its first coordination sphere and is multidentate in its binding on alumina surface. Extended X-ray absorption fine structure (EXAFS) measurement of Eu:γ-Al 2 O 3 sorption systems at pH 6.18 and 7.15 corroborate the existence of two surface complexes. Further it suggests the edge sharing bidentate binding of Eu on AlO 6 octahedra as the co-ordination mode of the higher lifetime component. Surface Complexation Modeling (SCM) of Am(III)/Eu(III) sorption onto γ-alumina at pH ≤7 has been carried out using these two surface species. 2-pK surface complexation modeling coupled with constant capacitance model

Surface defect free growth of a spin dimer TlCuCl{sub 3} compound crystals and investigations on its optical and magnetic properties

Energy Technology Data Exchange (ETDEWEB)

Ryu, Gihun, E-mail: G.Ryu@fkf.mpg.de [Max Planck Institute for Solid State Research, Heisenbergstraße 1, 70569 Stuttgart (Germany); Son, Kwanghyo [Max Planck Institute for Intelligent Systems, Heisenbergstraße 3, 70569 Stuttgart (Germany)

2016-05-15

A defect-free high quality single crystal of spin dimer TlCuCl{sub 3} compound is firstly synthesized at the optimal growth temperature using the vertical Bridgman method. In this study, we clearly found that the cupric chloride is easily decomposed into the Cl{sup −} deficient composition at ≥470 °C. The Cl{sup −}- related gas phase at the high temperature region also always gives rise to a pinhole-like surface defect at the surface of crystal. Therefore, we clearly verified an exotic anisotropic magnetic behavior (anisotropic ratio of M{sub b}/M{sub (201)} at 2 K, 7 T=10) using the defect-free TlCuCl{sub 3} crystals in this three-dimensional spin dimer TlCuCl{sub 3} compound, relatively stronger magnetic ordering in the H//b than that of H//(201) direction at above the transition magnetic field. - Graphical abstract: A single crystal of spin dimer TlCuCl{sub 3} compound with a defect free is successfully synthesized on the basis of TG/DTA result. We newly found that this cupric chloride compound is easily decomposed into the Cl{sup −} deficient composition at ≥470 °C and Cl{sup −} related gas phases also give rise to the defects like a pinhole on the surface of TlCuCl{sub 3} crystal. Using the crystals with a surface defect free, we also clearly verified the crystal structure of spin dimer TlCuCl{sub 3} compound.

Sorption of trace amounts of gallium (III) on iron (III) oxide

International Nuclear Information System (INIS)

Music, S.; Gessner, M.; Wolf, R.H.H.

1979-01-01

The sorption of trace amounts of gallium(III) on iron(III) oxide has been studied as a function of pH. Optimum conditions have been found for the preconcentration of traces of gallium(III) by iron(III) oxide. The influence of surface active substances and of complexing agents on the sorption of trace amounts of gallium(III) on iron(III) oxide has been also studied. (orig.) [de

Sorption of trace amounts of gallium (III) on iron (III) oxide

Energy Technology Data Exchange (ETDEWEB)

Music, S; Gessner, M; Wolf, R H.H. [Institut Rudjer Boskovic, Zagreb (Yugoslavia)

1979-01-01

The sorption of trace amounts of gallium(III) on iron(III) oxide has been studied as a function of pH. Optimum conditions have been found for the preconcentration of traces of gallium(III) by iron(III) oxide. The influence of surface active substances and of complexing agents on the sorption of trace amounts of gallium(III) on iron(III) oxide has been also studied.

On the influence of extrinsic point defects on irradiation-induced point-defect distributions in silicon

International Nuclear Information System (INIS)

Vanhellemont, J.; Romano-Rodriguez, A.

1994-01-01

A semi-quantitative model describing the influence of interfaces and stress fields on {113}-defect generation in silicon during 1-MeV electron irradiation, is further developed to take into account also the role of extrinsic point defects. It is shown that the observed distribution of {113}-defects in high-flux electron-irradiated silicon and its dependence on irradiation temperature and dopant concentration can be understood by taking into account not only the influence of the surfaces and interfaces as sinks for intrinsic point defects but also the thermal stability of the bulk sinks for intrinsic point defects. In heavily doped silicon the bulk sinks are related with pairing reactions of the dopant atoms with the generated intrinsic point defects or related with enhanced recombination of vacancies and self-interstitials at extrinsic point defects. The obtained theoretical results are correlated with published experimental data on boron-and phosphorus-doped silicon and are illustrated with observations obtained by irradiating cross-section transmission electron microscopy samples of wafer with highly doped surface layers. (orig.)

Optical and Temporal Carrier Dynamics Investigations of III-Nitrides for Semiconductor Lighting

KAUST Repository

Ajia, Idris A.

2018-01-01

In the first part of this dissertation, the effects of some important types of crystal defects present in III-nitride structures are investigated. Here, two types of defects are studied in two different III-nitride-based light emitting structures. The first defects of interest are V-pit defects in InGaN/GaN multiple quantum well (MQW) blue LEDs, where their contribution to the high-efficiency of such LEDs is discussed. In addition, the effect of these defects on the efficiency droop phenomenon in these LEDs is elucidated. Secondly, the optical effects of grain boundary defects in AlN-rich AlGaN/AlGaN MQWs is studied. In this study, it is shown that grain boundary defects may result in abnormal carrier localization behavior in these deep ultraviolet (UV) structures. While both defects are treated individually, it is evident from these studies that threading dislocation (TD) defects are an underlying contributor to the more undesirable outcomes of the said defects. In the second part, the dissertation reports on the carrier dynamics of III-nitride LED structures grown on emerging substrates—as possible efficiency enhancing techniques—aimed at mitigating the effects of TD defects. Thus, the carrier dynamics of GaN/AlGaN UV MQWs grown, for the first time, on (2̅01) – oriented β-Ga2O3 is studied. It is shown to be a candidate substrate for highly efficient vertical UV devices. Finally, results from the carrier dynamics investigation of an AlGaN/AlGaN MQW LED structure homoepitaxially grown on AlN substrate are discussed, where it is shown that its high-efficiency is sustained at high temperatures through the thermal redistribution of carriers to highly efficient recombination sites.

Predicting internal red oak (Quercus rubra) log defect features using surface defect defect measurements

Science.gov (United States)

R. Edward. Thomas

2013-01-01

Determining the defects located within a log is crucial to understanding the tree/log resource for efficient processing. However, existing means of doing this non-destructively requires the use of expensive x-ray/CT (computerized tomography), MRI (magnetic resonance imaging), or microwave technology. These methods do not lend themselves to fast, efficient, and cost-...

Electronic structure of surface-supported bis(phthalocyaninato) terbium(III) single molecular magnets.

Science.gov (United States)

Vitali, Lucia; Fabris, Stefano; Conte, Adriano Mosca; Brink, Susan; Ruben, Mario; Baroni, Stefano; Kern, Klaus

2008-10-01

The electronic structure of isolated bis(phthalocyaninato) terbium(III) molecules, a novel single-molecular-magnet (SMM), supported on the Cu(111) surface has been characterized by density functional theory and scanning tunneling spectroscopy. These studies reveal that the interaction with the metal surface preserves both the molecular structure and the large spin magnetic moment of the metal center. The 4f electron states are not perturbed by the adsorption while a strong molecular/metal interaction can induce the suppression of the minor spin contribution delocalized over the molecular ligands. The calculations show that the inherent spin magnetic moment of the molecule is only weakly affected by the interaction with the surface and suggest that the SMM character might be preserved.

Magnetite Fe3O4 (111) Surfaces: Impact of Defects on Structure, Stability, and Electronic Properties

KAUST Repository

Noh, Jung Hyun

2015-08-04

We present a comprehensive investigation, via first-principles density functional theory (DFT) calculations, of various surface terminations of magnetite, Fe3O4 (111), a major iron oxide which has also a number of applications in electronics and spintronics. We compare the thermodynamic stability and electronic structure among the different surfaces terminations. Interestingly, we find that surfaces modified with point defects and adatoms can be more stable than bulk-like terminations. These surfaces show different surface chemistry, electronic structures and distinctive spin polarization features near the Fermi level from those previously considered in the literature. Our studies provide an atomic level insight for magnetite surfaces, which is a necessary step to understanding their interfaces with organic layers in OLED and spintronic devices.

Magnetite Fe3O4 (111) Surfaces: Impact of Defects on Structure, Stability, and Electronic Properties

KAUST Repository

Noh, Jung Hyun; Osman, Osman I; Aziz, Saadullah G.; Winget, Paul; Bredas, Jean-Luc

2015-01-01

We present a comprehensive investigation, via first-principles density functional theory (DFT) calculations, of various surface terminations of magnetite, Fe3O4 (111), a major iron oxide which has also a number of applications in electronics and spintronics. We compare the thermodynamic stability and electronic structure among the different surfaces terminations. Interestingly, we find that surfaces modified with point defects and adatoms can be more stable than bulk-like terminations. These surfaces show different surface chemistry, electronic structures and distinctive spin polarization features near the Fermi level from those previously considered in the literature. Our studies provide an atomic level insight for magnetite surfaces, which is a necessary step to understanding their interfaces with organic layers in OLED and spintronic devices.

Defect formation energies and homogeneity ranges of rock salt-, pyrite-, chalcopyrite- and molybdenite-type compound semiconductors

Energy Technology Data Exchange (ETDEWEB)

Fiechter, S. [Hahn-Meitner-Institut, Glienicker Strasse 100, Berlin D-14109 (Germany)

2004-07-01

Employing the generalisation of Van Vechten's cavity model, formation energies of neutral point defects in pyrites (FeS{sub 2}, RuS{sub 2}), chalcopyrites (II-IV-V{sub 2} and I-III-VI{sub 2}) as well as molybdenites (MoS{sub 2}, WS{sub 2}) have been estimated. As input parameters the fundamental band gaps, work functions, electron affinities, surface energies, coordination numbers, covalent or ionic radii and unit cell parameters were used. The values calculated for tetrahedrally and octahedrally coordinated compounds agreed well with measured values. The data obtained can be used to calculate point defect concentrations and homogeneity ranges as a function of partial pressure and temperature. Introducing charged vacancies, the conductivity type can be predicted.

Thermal etching of silver: Influence of rolling defects

Energy Technology Data Exchange (ETDEWEB)

Ollivier, M., E-mail: o.maelig@imperial.ac.uk [Department of Materials, Imperial College London, SW7 2AZ (United Kingdom); Harker, R.M. [AWE Aldermaston, Aldermaston, Reading RG7 4PR (United Kingdom); Chater, R.J.; Gourlay, C.M. [Department of Materials, Imperial College London, SW7 2AZ (United Kingdom)

2016-08-15

Silver is well known to be thermally etched in an oxygen-rich atmosphere and has been extensively studied in the laboratory to understand thermal etching and to limit its effect when this material is used as a catalyst. Yet, in many industrial applications the surface of rolled silver sheets is used without particular surface preparation. Here, it is shown by combining FIB-tomography, FIB-SIMS and analytical SEM that the kinetics of thermal etch pitting are significantly faster on rolled Ag surfaces than on polished surfaces. This occurs due to range of interacting phenomena including (i) the reaction of subsurface carbon-contamination with dissolved oxygen to form pores that grow to intersect the surface, (ii) surface reconstruction around corrosion pits and surface scratches, and (iii) sublimation at low pressure and high temperature. A method to identify subsurface pores is developed to show that the pores have (111) and (100) internal facets and may be filled with a gas coming from the chemical reaction of oxygen and carbon contamination. - Highlights: Thermal etching of industrial silver sheets vs. polished silver sheets Effect of annealing atmosphere on the thermal etching of silver: surface and subsurface characterization Link between etch pitting and defects induced by rolling. FIB-tomography coupled with EBSD for determining crystal planes of the facets of subsurface pores. FIB-SIMS characterization to probe the gas confined inside subsurface pores.

An approach to determine a critical size for rolling contact fatigue initiating from rail surface defects

NARCIS (Netherlands)

Li, Z.; Zhao, X.; Dollevoet, R.P.B.J.

2016-01-01

A methodology for the determination of a critical size of surface defects, above which RCF can initiate, has been developed and demonstrated with its application to the passive type of squats under typical Dutch railway loading conditions. Such a methodology is based on stress evaluation of

Electron scattering by native defects in III-V nitrides and their alloys

International Nuclear Information System (INIS)

Hsu, L.; Walukiewicz, W.

1996-03-01

We have calculated the electron mobilities in GaN and InN taking into consideration scattering by short range potentials, in addition to all standard scattering mechanisms. These potentials are produced by the native defects which are responsible for the high electron concentrations in nominally undoped nitrides. Comparison of the calculated mobilities with experimental data shows that scattering by short range potentials is the dominant mechanism limiting the electron mobilities in unintentionally doped nitrides with large electron concentrations. In the case of Al x Ga 1-x N alloys, the reduction in the electron concentration due to the upward shift of the conduction band relative to the native defect level can account for the experimentally measured mobilities. Resonant scattering is shown to be important when the defect and Fermi levels are close in energy

On the use of the plasma in III-V semiconductor processing

Energy Technology Data Exchange (ETDEWEB)

Bruno, G.; Capezzuto, P.; Losurdo, M. [C.N.R.-Centro di Studio per la Chimica dei Plasmi Dipartimento di Chimica-Universita di Bari via Orabona, 4-70126 Bari (Italy)

1996-03-01

The manufacture of usable devices based on III-V semiconductor materials is a complex process requiring epilayer growth, anisotropic etching, defect passivation, surface oxidation and substrate preparation processes. The combination of plasma based methods with metalorganic chemical vapor deposition (MOCVD) offers some real advantages: {ital in} {ital situ} production and preactivation of PH{sub 3} and sample preparation using H-atom. The detailed understanding and use of the plasma (using mass spectrometry, optical emission spectroscopy, laser reflectance interferometry and spectroscopic ellipsometry) as applied to InP material is discussed. {copyright} {ital 1996 American Institute of Physics.}

High-Performance Quantum Dot Thin-Film Transistors with Environmentally Benign Surface Functionalization and Robust Defect Passivation.

Science.gov (United States)

Jung, Su Min; Kang, Han Lim; Won, Jong Kook; Kim, JaeHyun; Hwang, ChaHwan; Ahn, KyungHan; Chung, In; Ju, Byeong-Kwon; Kim, Myung-Gil; Park, Sung Kyu

2018-01-31

The recent development of high-performance colloidal quantum dot (QD) thin-film transistors (TFTs) has been achieved with removal of surface ligand, defect passivation, and facile electronic doping. Here, we report on high-performance solution-processed CdSe QD-TFTs with an optimized surface functionalization and robust defect passivation via hydrazine-free metal chalcogenide (MCC) ligands. The underlying mechanism of the ligand effects on CdSe QDs has been studied with hydrazine-free ex situ reaction derived MCC ligands, such as Sn 2 S 6 4- , Sn 2 Se 6 4- , and In 2 Se 4 2- , to allow benign solution-process available. Furthermore, the defect passivation and remote n-type doping effects have been investigated by incorporating indium nanoparticles over the QD layer. Strong electronic coupling and solid defect passivation of QDs could be achieved by introducing electronically active MCC capping and thermal diffusion of the indium nanoparticles, respectively. It is also noteworthy that the diffused indium nanoparticles facilitate charge injection not only inter-QDs but also between source/drain electrodes and the QD semiconductors, significantly reducing contact resistance. With benign organic solvents, the Sn 2 S 6 4- , Sn 2 Se 6 4- , and In 2 Se 4 2- ligand based QD-TFTs exhibited field-effect mobilities exceeding 4.8, 12.0, and 44.2 cm 2 /(V s), respectively. The results reported here imply that the incorporation of MCC ligands and appropriate dopants provide a general route to high-performance, extremely stable solution-processed QD-based electronic devices with marginal toxicity, offering compatibility with standard complementary metal oxide semiconductor processing and large-scale on-chip device applications.

Mathematical Modeling of Radiant Heat Transfer in Mirror Systems Considering Deep Reflecting Surface Defects

Directory of Open Access Journals (Sweden)

V. V. Leonov

2014-01-01

Full Text Available When designing large-sized mirror concentrating systems (MCS for high-temperature solar power plants, one must have at disposal reasonably reliable and economical methods and tools, making it possible to analyze its characteristics, to predict them depending on the operation conditions and accordingly to choose the most suitable system for the solution of particular task.Experimental determination of MCS characteristics requires complicated and expensive experimentation, having significant limitations on interpretation of the results, as well as limitations imposed due to the size of the structure. Therefore it is of particular interest to develop a mathematical model capable of estimating power characteristics of MCS considering the influence of operating conditions, design features, roughness and other surface defects.For efficient solution of the tasks the model must ensure simulation of solar radiant flux as well as simulation of geometrical and optical characteristics of reflection surface and their interaction. In this connection a statistical mathematical model of radiation heat exchange based on use of Monte Carlo methods and Finite Element Method was developed and realized in the software complex, making it possible to determine main characteristics of the MCS.In this paper the main attention is given to definition of MCS radiation characteristics with account for deep reflecting surface defects (cavities, craters. Deep cavities are not typical for MCS, but their occurrence is possible during operation as a result of erosion or any physical damage. For example, for space technology it is primarily micrometeorite erosion.

Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces.

Science.gov (United States)

Gruber, J; Zhou, X W; Jones, R E; Lee, S R; Tucker, G J

2017-05-21

We investigate the formation of extended defects during molecular-dynamics (MD) simulations of GaN and InGaN growth on (0001) and ([Formula: see text]) wurtzite-GaN surfaces. The simulated growths are conducted on an atypically large scale by sequentially injecting nearly a million individual vapor-phase atoms towards a fixed GaN surface; we apply time-and-position-dependent boundary constraints that vary the ensemble treatments of the vapor-phase, the near-surface solid-phase, and the bulk-like regions of the growing layer. The simulations employ newly optimized Stillinger-Weber In-Ga-N-system potentials, wherein multiple binary and ternary structures are included in the underlying density-functional-theory training sets, allowing improved treatment of In-Ga-related atomic interactions. To examine the effect of growth conditions, we study a matrix of >30 different MD-growth simulations for a range of In x Ga 1-x N-alloy compositions (0 ≤  x  ≤ 0.4) and homologous growth temperatures [0.50 ≤  T/T * m ( x ) ≤ 0.90], where T * m ( x ) is the simulated melting point. Growths conducted on polar (0001) GaN substrates exhibit the formation of various extended defects including stacking faults/polymorphism, associated domain boundaries, surface roughness, dislocations, and voids. In contrast, selected growths conducted on semi-polar ([Formula: see text]) GaN, where the wurtzite-phase stacking sequence is revealed at the surface, exhibit the formation of far fewer stacking faults. We discuss variations in the defect formation with the MD growth conditions, and we compare the resulting simulated films to existing experimental observations in InGaN/GaN. While the palette of defects observed by MD closely resembles those observed in the past experiments, further work is needed to achieve truly predictive large-scale simulations of InGaN/GaN crystal growth using MD methodologies.

Novel (1 × 1)-reconstructions and native defects of TiO{sub 2} anatase (101) surface

Energy Technology Data Exchange (ETDEWEB)

Wang, Qinggao, E-mail: wangqinggao1984@126.com [Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Department of Physics and Electrical Engineering, Anyang Normal University, Anyang, Henan Province 455000 (China); Ren, Fengzhu [Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Dong, Huafeng [School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006 (China); Wang, Yuanxu, E-mail: wangyx@henu.edu.cn [Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004 (China)

2017-05-31

Highlights: • Acceptor energy levels are induced by O interstitials; corresponding to a transition of indirect-to-direct band gap and a narrowing of band gap. • The Fermi levels of defected and reconstructed TiO{sub 2} anatse (101) can be modulated in a wide range. - Abstract: In this paper, reconstructions and native defects of TiO{sub 2} anatase (101) surface are studied using the state-of-the-art theoretical method. We find that O interstitials are dominated defects at an oxidization environment. These O interstitials induce acceptor energy levels, corresponding to an indirect-direct band transition and a bandgap narrowing. And thus, the experimental result that an O-rich anatase TiO{sub 2} has the higher photocatalytic activity can be understood. The formation of O vacancies and Ti interstitials becomes feasible at a reduced condition, and reconstructed TiO{sub 2} anatase (101)-(1 × 1) structures present with increasing reduction degree. Furthermore, the Fermi levels of defected and reconstructed TiO{sub 2} anatse (101) can be modulated in a wide range (i.e., nearly the whole band gap), which are different from those of TiO{sub 2} rutile (110).

Defect Detectability Improvement for Conventional Friction Stir Welds

Science.gov (United States)

Hill, Chris

2013-01-01

This research was conducted to evaluate the effects of defect detectability via phased array ultrasound technology in conventional friction stir welds by comparing conventionally prepped post weld surfaces to a machined surface finish. A machined surface is hypothesized to improve defect detectability and increase material strength.

Defect Characterization in Semiconductors with Positron Annihilation Spectroscopy

Science.gov (United States)

Tuomisto, Filip

Positron annihilation spectroscopy is an experimental technique that allows the selective detection of vacancy defects in semiconductors, providing a means to both identify and quantify them. This chapter gives an introduction to the principles of the positron annihilation techniques and then discusses the physics of some interesting observations on vacancy defects related to growth and doping of semiconductors. Illustrative examples are selected from studies performed in silicon, III-nitrides, and ZnO.

Substrate effects on the formation of flat Ag films on (110) surfaces of III-V compound semiconductors

International Nuclear Information System (INIS)

Chao, K.; Zhang, Z.; Ebert, P.; Shih, C.K.

1999-01-01

Ag films grown at 135 K on (110) surfaces of III-V compound semiconductors and annealed at room temperature are investigated by scanning tunneling microscopy and low-energy electron diffraction. Ag films on Ga-V semiconductors are well ordered, atomically flat, and exhibit a specific critical thickness, which is a function of the substrate material. Films grown on In-V semiconductors are still rather flat, but significantly more disordered. The (111) oriented Ag films on III-arsenides and III-phosphides exhibit a clear twofold superstructure. Films on III-antimonides exhibit threefold low-energy electron diffraction images. The morphology of the Ag films can be explained on the basis of the electronic growth mechanism. copyright 1999 The American Physical Society

Optical properties and defect levels in a surface layer found on CuInSe{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Abulfotuh, F.; Wangensteen, T.; Ahrenkiel, R.; Kazmerski, L.L. [National Renewable Energy Lab., Golden, CO (United States)

1996-05-01

In this paper the authors have used photoluminescence (PL) and wavelength scanning ellipsometry (WSE) to clarify the relationship among the electro-optical properties of copper indium diselenide (CIS) thin films, the type and origin of dominant defect states, and device performance. The PL study has revealed several shallow acceptor and donor levels dominating the semiconductor. PL emission from points at different depths from the surface of the CIS sample has been obtained by changing the angle of incidence of the excitation laser beam. The resulting data were used to determine the dominant defect states as a function of composition gradient at the surface of the chalcopyrite compound. The significance of this type of measurement is that it allowed the detection of a very thin layer with a larger bandgap (1.15-1.26 eV) than the CIS present on the surface of the CIS thin films. The presence of this layer has been correlated by several groups to improvement of the CIS cell performance. An important need that results from detecting this layer on the surface of the CIS semiconductor is the determination of its thickness and optical constants (n, k) as a function of wavelength. The thickness of this surface layer is about 500 {Angstrom}.

Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

International Nuclear Information System (INIS)

Zhao, W.; Steidl, M.; Paszuk, A.; Brückner, S.; Dobrich, A.; Supplie, O.; Kleinschmidt, P.; Hannappel, T.

2017-01-01

Highlights: • We investigate the Si(111) surface prepared in CVD ambient at 1000 °C in 950 mbar H_2. • UHV-based XPS, LEED, STM and FTIR as well as ambient AFM are applied. • After processing the Si(111) surface is free of contamination and atomically flat. • The surface exhibits a (1 × 1) reconstruction and monohydride termination. • Wet-chemical pretreatment and homoepitaxy are required for a regular step structure. - Abstract: For well-defined heteroepitaxial growth of III-V epilayers on Si(111) substrates the atomic structure of the silicon surface is an essential element. Here, we study the preparation of the Si(111) surface in H_2-based chemical vapor ambient as well as its atomic structure after contamination-free transfer to ultrahigh vacuum (UHV). Applying complementary UHV-based techniques, we derive a complete picture of the atomic surface structure and its chemical composition. X-ray photoelectron spectroscopy measurements after high-temperature annealing confirm a Si surface free of any traces of oxygen or other impurities. The annealing in H_2 ambient leads to a monohydride surface termination, as verified by Fourier-transform infrared spectroscopy. Scanning tunneling microscopy confirms a well ordered, atomically smooth surface, which is (1 × 1) reconstructed, in agreement with low energy electron diffraction patterns. Atomic force microscopy reveals a significant influence of homoepitaxy and wet-chemical pretreatment on the surface morphology. Our findings show that wet-chemical pretreatment followed by high-temperature annealing leads to contamination-free, atomically flat Si(111) surfaces, which are ideally suited for subsequent III-V heteroepitaxy.

Formation of Ti(III) and Ti(IV) states in Ti{sub 3}O{sub 5} nano- and microfibers obtained from hydrothermal annealing of C-doped TiO{sub 2} on Si

Energy Technology Data Exchange (ETDEWEB)

Stem, Nair, E-mail: nairstem@hotmail.com [Laboratório de Sistemas Integráveis (LSI), Escola Politécnica, Universidade de São Paulo, Av. Prof. Luciano Gualberto 158, 05508900 São Paulo, SP (Brazil); Souza, Michele L.; Araújo de Faria, Dalva Lúcia Araújo [Laboratório de Espectroscopia Molecular (LEM), Instituto de Química, Universidade de São Paulo, Av. Prof. Lineu Prestes 748, 05508900 São Paulo, SP (Brazil); Santos Filho, Sebastião G. dos [Laboratório de Sistemas Integráveis (LSI), Escola Politécnica, Universidade de São Paulo, Av. Prof. Luciano Gualberto 158, 05508900 São Paulo, SP (Brazil)

2014-05-02

In this work, it is investigated the formation of Ti(III) and Ti(IV) states at the surface and in the bulk of the Ti{sub 3}O{sub 5} material grown as meshes of nano- and micro-fibers obtained from hydrothermal annealing of C-doped TiO{sub 2} on Si. The topography and distribution of the fibers in the meshes were characterized by atomic force microscopy. When the fiber distribution was more compact, a higher photoluminescence signal at 850 nm (1.46 eV) was obtained, indicating the presence of a higher number of defects corresponding to the Ti(III) sites. From X-ray photoelectron spectroscopy, it was obtained a Ti(III)/Ti(IV) ratio much lower than the expected value for the Ti{sub 3}O{sub 5} phase (2 Ti(III): 1 Ti(IV)). The discrepancy was mainly attributed to the reaction of surface Ti(III) states of the Ti{sub 3}O{sub 5} fibers with water during the hydrothermal annealing, resulting in surface Ti(IV) with -OH radicals. On the other hand, X-ray photoelectron spectroscopy also indicated that substitutional and interstitial carbon atoms coexist, elemental carbon exists in the samples due to the co-deposition process and, as a result, the carbon inside of the TiO{sub 2} rutile lattice is acting as one of the precursors for the formation of Ti{sub 3}O{sub 5}. - Highlights: • Ti(III) states are detected inside of Ti{sub 3}O{sub 5} nano- and microfibers. • Ti(IV) states are predominantly detected on the surface of Ti{sub 3}O{sub 5} nano- and microfibers. • Photoluminescence at 850 nm for Ti{sub 3}O{sub 5} is due to defects associated to Ti(III). • Rutile possibly changes to C2/m Ti{sub 3}O{sub 5} during the hydrothermal annealing of C-doped TiO{sub 2}.

Electron transport in ethanol & methanol absorbed defected graphene

Science.gov (United States)

Dandeliya, Sushmita; Srivastava, Anurag

2018-05-01

In the present paper, the sensitivity of ethanol and methanol molecules on surface of single vacancy defected graphene has been investigated using density functional theory (DFT). The changes in structural and electronic properties before and after adsorption of ethanol and methanol were analyzed and the obtained results show high adsorption energy and charge transfer. High adsorption happens at the active site with monovacancy defect on graphene surface. Present work confirms that the defected graphene increases the surface reactivity towards ethanol and methanol molecules. The presence of molecules near the active site affects the electronic and transport properties of defected graphene which makes it a promising choice for designing methanol and ethanol sensor.

Influence of defects on the adhesion of transition metals on non-polar MgO(001) surface: comparative theoretical analysis

International Nuclear Information System (INIS)

Zhukovskii, Yu.F.; Kotomin, E.A.

2004-01-01

Full text: First principles simulations were performed for noble (Ag) and transition (Cu) atoms adsorbed on regular and defective MgO(001) substrate [1]. Both metal atoms and surface O vacancies (F s centers) were distributed uniformly with one Ag (Cu) atom or F 2 defect per 2x2 surface supercell. Surface O 2- ions are the energetically more preferable for metal atom adsorption on a regular substrate as compared to Mg 2+ ions. The nature of the interaction between Ag or Cu adatoms and a defectless MgO substrate is physisorption (despite the difference in the adsorption energies: 0.62 eV vs. 0.39 eV per Cu and Ag adatom, respectively). Above the F s centers, metal atoms are bounded much stronger as compared with the regular O 2- sites (2.4 eV vs. 2.1 eV per Cu and Ag adatoms, respectively). This is accompanied by a substantial charge transfer towards each adatom (Δq Cu = 0.41 e and Δq Ag = 0.32 e) as well as a formation of partly covalent Me-F s bonds across the interface (Mulliken bond populations p Cu-F s = 0.25 e and p Ag-F s = 0.33 e). Thus, adsorption of transition metal atom on the defective MgO(001) substrate clearly indicates a strong electrostatic bonding because of the considerable interfacial charge redistribution. [1] Yu.F. Zhukovskii, E.A. Kotomin, and G. Borstel, Adsorption of single Ag and Cu atoms on regular and defective MgO(001) substrates: an ab initio study - Vacuum, 73 (2004) in press

An incomplete trafficking defect to the cell-surface leads to paradoxical thrombocytosis for human and murine MPL P106L.

Science.gov (United States)

Favale, Fabrizia; Messaoudi, Kahia; Varghese, Leila N; Boukour, Siham; Pecquet, Christian; Gryshkova, Vitalina; Defour, Jean Philippe; Albu, Roxana-Irina; Bluteau, Olivier; Ballerini, Paola; Leverger, Guy; Plo, Isabelle; Debili, Najet; Raslova, Hana; Favier, Remi; Constantinescu, Stefan N; Vainchenker, William

2016-12-29

The mechanisms behind the hereditary thrombocytosis induced by the thrombopoietin (THPO) receptor MPL P106L mutant remain unknown. A complete trafficking defect to the cell surface has been reported, suggesting either weak constitutive activity or nonconventional THPO-dependent mechanisms. Here, we report that the thrombocytosis phenotype induced by MPL P106L belongs to the paradoxical group, where low MPL levels on platelets and mature megakaryocytes (MKs) lead to high serum THPO levels, whereas weak but not absent MPL cell-surface localization in earlier MK progenitors allows response to THPO by signaling and amplification of the platelet lineage. MK progenitors from patients showed no spontaneous growth and responded to THPO, and MKs expressed MPL on their cell surface at low levels, whereas their platelets did not respond to THPO. Transduction of MPL P106L in CD34 + cells showed that this receptor was more efficiently localized at the cell surface on immature than on mature MKs, explaining a proliferative response to THPO of immature cells and a defect in THPO clearance in mature cells. In a retroviral mouse model performed in Mpl -/- mice, MPL P106L could induce a thrombocytosis phenotype with high circulating THPO levels. Furthermore, we could select THPO-dependent cell lines with more cell-surface MPL P106L localization that was detected by flow cytometry and [ 125 I]-THPO binding. Altogether, these results demonstrate that MPL P106L is a receptor with an incomplete defect in trafficking, which induces a low but not absent localization of the receptor on cell surface and a response to THPO in immature MK cells. © 2016 by The American Society of Hematology.

Breakdown, fractoemission, diffusion: role of defects in dielectrics

International Nuclear Information System (INIS)

Vigouroux, J.P.; Serruys, Y.

1987-01-01

During the surface analysis of dielectric materials, the impinging ionising particles induce point defects localised in the band gap and build an electrical charge. The electric field created by the charged defects modifies the physico-chemical properties of surface and bulk. We show that the fundamental study of defects allows a better understanding of technological phenomena such as dielectric breakdown, fracture and diffusion [fr

Deep-level defects in semiconductors: studies by magnetic resonance

International Nuclear Information System (INIS)

Ammerlaan, C.A.J.

1983-01-01

This work is divided into two parts. In the first one, the following topics are discussed: paramagnetic centers in semiconductors, principles of magnetic resonance, spin-Hamiltonian, g-tensor, hyperfine interaction, magnetic resonance spectrometer. In the second part it is dicussed defects studied by magnetic resonance including vacancy and divacancy in silicon, iron in silicon, nitrogen in diamond and antisite defects in III-V compounds. (A.C.A.S.) [pt

Lattice defects in semiconducting Hg/1-x/Cd/x/Te alloys. III - Defect structure of undoped Hg0.6Cd0.4Te

Science.gov (United States)

Vydyanath, H. R.; Donovan, J. D.; Nelson, D. A.

1981-01-01

Hall effect measurements were carried out on undoped Hg0.6Cd0.4Te crystals quenched to room temperature subsequent to equilibration at temperatures varying from 450 to 720 C under various partial pressures of Hg. The variation of the hole concentration as a function of the partial pressure of Hg indicates that the native acceptor defects are doubly ionized. Native donor defects are found to be negligible in concentration and the p-type to n-type conversion is shown to be due to residual donors and not due to native donor defects. Thermodynamic constant for the incorporation of the doubly ionized native acceptor defect has been established.

Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

Energy Technology Data Exchange (ETDEWEB)

Zhao, W.; Steidl, M.; Paszuk, A. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Brückner, S. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Helmholtz-Zentrum Berlin, Institut für Solare Brennstoffe, 14109 Berlin (Germany); Dobrich, A. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Supplie, O. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Helmholtz-Zentrum Berlin, Institut für Solare Brennstoffe, 14109 Berlin (Germany); Kleinschmidt, P. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Hannappel, T., E-mail: thomas.hannappel@tu-ilmenau.de [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Helmholtz-Zentrum Berlin, Institut für Solare Brennstoffe, 14109 Berlin (Germany)

2017-01-15

Highlights: • We investigate the Si(111) surface prepared in CVD ambient at 1000 °C in 950 mbar H{sub 2}. • UHV-based XPS, LEED, STM and FTIR as well as ambient AFM are applied. • After processing the Si(111) surface is free of contamination and atomically flat. • The surface exhibits a (1 × 1) reconstruction and monohydride termination. • Wet-chemical pretreatment and homoepitaxy are required for a regular step structure. - Abstract: For well-defined heteroepitaxial growth of III-V epilayers on Si(111) substrates the atomic structure of the silicon surface is an essential element. Here, we study the preparation of the Si(111) surface in H{sub 2}-based chemical vapor ambient as well as its atomic structure after contamination-free transfer to ultrahigh vacuum (UHV). Applying complementary UHV-based techniques, we derive a complete picture of the atomic surface structure and its chemical composition. X-ray photoelectron spectroscopy measurements after high-temperature annealing confirm a Si surface free of any traces of oxygen or other impurities. The annealing in H{sub 2} ambient leads to a monohydride surface termination, as verified by Fourier-transform infrared spectroscopy. Scanning tunneling microscopy confirms a well ordered, atomically smooth surface, which is (1 × 1) reconstructed, in agreement with low energy electron diffraction patterns. Atomic force microscopy reveals a significant influence of homoepitaxy and wet-chemical pretreatment on the surface morphology. Our findings show that wet-chemical pretreatment followed by high-temperature annealing leads to contamination-free, atomically flat Si(111) surfaces, which are ideally suited for subsequent III-V heteroepitaxy.

Defect identification in semiconductors with positron annihilation: experiment and theory

Science.gov (United States)

Tuomisto, Filip

2015-03-01

Positron annihilation spectroscopy is a very powerful technique for the detection, identification and quantification of vacancy-type defects in semiconductors. In the past decades, it has been used to reveal the relationship between opto-electronic properties and specific defects in a wide variety of materials - examples include parasitic yellow luminescence in GaN, dominant acceptor defects in ZnO and broad-band absorption causing brown coloration in natural diamond. In typical binary compound semiconductors, the selective sensitivity of the technique is rather strongly limited to cation vacancies that possess significant open volume and suitable charge (negative of neutral). On the other hand, oxygen vacancies in oxide semiconductors are a widely debated topic. The properties attributed to oxygen vacancies include the inherent n-type conduction, poor p-type dopability, coloration (absorption), deep level luminescence and non-radiative recombination, while the only direct experimental evidence of their existence has been obtained on the crystal surface. We will present recent advances in combining state-of-the-art positron annihilation experiments and ab initio computational approaches. The latter can be used to model both the positron lifetime and the electron-positron momentum distribution - quantities that can be directly compared with experimental results. We have applied these methods to study vacancy-type defects in III-nitride semiconductors (GaN, AlN, InN) and oxides such as ZnO, SnO2, In2O3andGa2O3. We will show that cation-vacancy-related defects are important compensating centers in all these materials when they are n-type. In addition, we will show that anion (N, O) vacancies can be detected when they appear as complexes with cation vacancies.

Study on on-machine defects measuring system on high power laser optical elements

Science.gov (United States)

Luo, Chi; Shi, Feng; Lin, Zhifan; Zhang, Tong; Wang, Guilin

2017-10-01

The influence of surface defects on high power laser optical elements will cause some harm to the performances of imaging system, including the energy consumption and the damage of film layer. To further increase surface defects on high power laser optical element, on-machine defects measuring system was investigated. Firstly, the selection and design are completed by the working condition analysis of the on-machine defects detection system. By designing on processing algorithms to realize the classification recognition and evaluation of surface defects. The calibration experiment of the scratch was done by using the self-made standard alignment plate. Finally, the detection and evaluation of surface defects of large diameter semi-cylindrical silicon mirror are realized. The calibration results show that the size deviation is less than 4% that meet the precision requirement of the detection of the defects. Through the detection of images the on-machine defects detection system can realize the accurate identification of surface defects.

Point defects in nickel

International Nuclear Information System (INIS)

Peretto, P.

1969-01-01

The defects in electron irradiated nickel (20 deg. K) or neutron irradiated nickel (28 deg. K) are studied by simultaneous analysis using the magnetic after-effect, electron microscopy and electrical resistivity recovery. We use zone refined nickel (99.999 per cent) which, for some experiments, is alloyed with a small amount of iron (for example 0.1 per cent Fe). The temperature dependant electrical recovery may be divided in four stages. The sub-stages I B (31 deg. K), I C (42 deg. K), I D (from to 57 deg. K) and I E (62 deg. K) of stage I are due to the disappearance of single interstitials into vacancies. The interstitial defect has a split configuration with a migration energy of about 0.15 eV. In the close pair which disappears in stage I B the interstitial is found to be in a 3. neighbour position whilst in stage I D it is near the direction from the vacancy. In stage I E there is no longer any interaction between the interstitial and the vacancy. The stage II is due to more complicated interstitial defects: di-interstitials for stage II B (84 deg. K) and larger and larger interstitial loops for the following sub-stages. The loops may be seen by electron microscopy. Impurities can play the role of nucleation centers for the loops. Stages III A (370 deg. K) and III B (376 deg. K) are due to two types of di-vacancies. During stage IV (410 deg. K) the single vacancies migrate. Vacancy type loops and interstitial type loops grow concurrently and disappear at about 800 deg. K as observed by electron microscopy. (author) [fr

Nucleation and growth kinetics for intercalated islands during deposition on layered materials with isolated pointlike surface defects

International Nuclear Information System (INIS)

Han, Yong; Lii-Rosales, A.; Zhou, Y.; Wang, C.-J.

2017-01-01

Theory and stochastic lattice-gas modeling is developed for the formation of intercalated metal islands in the gallery between the top layer and the underlying layer at the surface of layered materials. Our model for this process involves deposition of atoms, some fraction of which then enter the gallery through well-separated pointlike defects in the top layer. Subsequently, these atoms diffuse within the subsurface gallery leading to nucleation and growth of intercalated islands nearby the defect point source. For the case of a single point defect, continuum diffusion equation analysis provides insight into the nucleation kinetics. However, complementary tailored lattice-gas modeling produces a more comprehensive and quantitative characterization. We analyze the large spread in nucleation times and positions relative to the defect for the first nucleated island. We also consider the formation of subsequent islands and the evolution of island growth shapes. The shapes reflect in part our natural adoption of a hexagonal close-packed island structure. As a result, motivation and support for the model is provided by scanning tunneling microscopy observations of the formation of intercalated metal islands in highly-ordered pyrolytic graphite at higher temperatures.

Extrusion product defects: a statistical study

International Nuclear Information System (INIS)

Qamar, S.Z.; Arif, A.F.M.; Sheikh, A.K.

2003-01-01

In any manufacturing environment, defects resulting in rework or rejection are directly related to product cost and quality, and indirectly linked with process, tooling and product design. An analysis of product defects is therefore integral to any attempt at improving productivity, efficiency and quality. Commercial aluminum extrusion is generally a hot working process and consists of a series of different but integrated operations: billet preheating and sizing, die set and container preheating, billet loading and deformation, product sizing and stretching/roll-correction, age hardening, and painting/anodizing. Product defects can be traced back to problems in billet material and preparation, die and die set design and maintenance, process variable aberrations (ram speed, extrusion pressure, container temperature, etc), and post-extrusion treatment (age hardening, painting/anodizing, etc). The current paper attempts to analyze statistically the product defects commonly encountered in a commercial hot aluminum extrusion setup. Real-world rejection data, covering a period of nine years, has been researched and collected from a local structural aluminum extrusion facility. Rejection probabilities have been calculated for all the defects studied. The nine-year rejection data have been statistically analyzed on the basis of (i) an overall breakdown of defects, (ii) year-wise rejection behavior, (iii) breakdown of defects in each of three cost centers: press, anodizing, and painting. (author)

Density functional study the interaction of oxygen molecule with defect sites of graphene

Energy Technology Data Exchange (ETDEWEB)

Qi Xuejun [State Key Laboratory of Coal Combustion, Wuhan 430074 (China); Guo Xin, E-mail: guoxin@mail.hust.edu.cn [State Key Laboratory of Coal Combustion, Wuhan 430074 (China); Zheng Chuguang [State Key Laboratory of Coal Combustion, Wuhan 430074 (China)

2012-10-15

Highlights: Black-Right-Pointing-Pointer The defect sites existed on the graphite surface create active sites and enhance the reactivity of carbonaceous material. Black-Right-Pointing-Pointer Oxygen molecule more favor chemisorbed on the graphene surface contains defect sites than the perfect surface. Black-Right-Pointing-Pointer The single active oxygen atom adsorbed on the defect surfaces, it completely insert into the surface. - Abstract: The present article reports a theoretical study of oxygen interacted with graphene surface containing defect sites on the atomic level by employing the density functional theory combined with the graphene cluster model. It was founded that oxygen molecule prefers to be chemisorbed on the graphene surface containing defect sites compared to the perfect surface. The adsorption energy of O{sub 2} on the double defect site is about 2.5 times as large as that on the perfect graphene surface. Moreover, the oxygen molecule interacts with S-W defect site gives rise to stable epoxy structure, which pulling the carbon atom outward from the original site in the direction perpendicular to the surface. If the oxygen molecule is adsorbed on the single vacancy site, two C-O bonds are formed on the graphene surface. However, when the oxygen molecule is chemisorbed on the double vacancy site, the oxygen atoms substitute the missing carbon atom's position in the carbon plane and form a hexagonal structure on the graphene network. The results indicate that single active oxygen atom approaches the defect site, it's completely adsorbed in the plane and high energy is released. In all cases, the interaction of an oxygen atom with defect surface involves an exothermic process. The defect site creates active sites on the surface of graphene and produces catalytic effects during the process of oxidation of carbonaceous materials.

Structural integrity evaluation of SG tube with surface wear-type defects

International Nuclear Information System (INIS)

Kim, Jong Min; Huh, Nam Su; Chang, Yoon Suk; Kim, Young Jin; Hwang, Seong Sik; Kim, Joung Soo

2006-01-01

During the last two decades, several guidelines have been developed and used for assessing the integrity of a defective Steam Generator (SG) tube that is generally caused by stress corrosion cracking or wall-thinning phenomenon. However, as some of SG tubes are also failed due to fretting and so on, alternative failure estimation schemes are required for relevant defects. In this paper, parametric three-dimensional Finite Element (FE) analyses are carried out under internal pressure condition to simulate the failure behavior of SG tubes with different defect configurations; elliptical wear, tapered and flat wear type defects. Maximum pressures based on material strengths are obtained from more than a hundred FE results to predict the failure of SG tube. After investigating the effect of key parameters such as defect depth, defect length and wrap angle, simplified failure estimation equations are proposed in relation to the equivalent stress at the deepest point in wear region. Comparison of failure pressures predicted by the proposed estimation scheme with corresponding burst test data showed a good agreement

Trapping of point defects and segregation at the free surfaces of a metal sheet under irradiation

International Nuclear Information System (INIS)

Sarce, Alicia

2003-01-01

The migration of irradiation produced vacancies and interstitials to the free surfaces of a sheet of thickness d (pure metal and binary alloys AB of hcp structure) is calculated. For alloys, the irradiation temperature when no segregation exists (critical temperature) is obtained. The anisotropy of the diffusion of point defects in the hcp lattice is explicitly included in the calculations. (author)

Oxygen-vacancy defects on BaTiO3 (001) surface: a quantum chemical study

International Nuclear Information System (INIS)

Duque, Carlos; Stashans, Arvids

2003-01-01

A quantum-chemical study of technologically important BaTiO 3 crystal and oxygen-vacancy defects on its (001) surface is reported in the present work. The computations are made using a quantum-chemical method developed for periodic systems (crystals), which is based on the Hartree-Fock theory. The atomic rearrangement due to the surface creation is obtained for a pure BaTiO 3 by means of the periodic large unit cell (LUC) model and using an automated geometry optimisation procedure. The same technique is employed to study the electronic and structural properties of the material due to the presence of an O vacancy and F centre (two electrons trapped in an oxygen vacancy). The computations are carried out for both cubic and tetragonal lattices

Correlation between bulk- and surface chemistry of Cr-tanned leather and the release of Cr(III) and Cr(VI).

Science.gov (United States)

Hedberg, Yolanda S; Lidén, Carola; Odnevall Wallinder, Inger

2014-09-15

About 1-3% of the adult general population in Europe is allergic to chromium (Cr). The assessment of the potential release of Cr(III) and Cr(VI) from leather is hence important from a human health and environmental risk perspective. The Cr(VI) content in leather was recently restricted in the European Union. The aim of this study was to assess possible correlations between the bulk and surface chemistry of leather, released Cr(III) and Cr(VI), and capacities of co-released leather specific species to reduce and complex released Cr. Four differently tanned leathers were characterized by scanning electron microscopy with energy dispersive spectroscopy, X-ray photoelectron spectroscopy, attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, and the diphenylcarbazide colorimetric method. Their characteristics were compared with results on Cr(III) and Cr(VI) release into artificial sweat (ASW, pHleather-specific species were shown to reduce Cr(VI), both in ASW and in PB. Their reduction capacities correlated with findings of the surface content of Cr and of released Cr. Leather samples without this capacity, and with less aromatic surface groups visible by ATR-FTIR, revealed Cr(VI) both at the surface and in solution (PB). Copyright © 2014 The Authors. Published by Elsevier B.V. All rights reserved.

Mirror-smooth surfaces and repair of defects in superconducting RF cavities by mechanical polishing

Energy Technology Data Exchange (ETDEWEB)

Cooper, C. A. [Fermilab; Cooley, L. D. [Fermilab

2012-11-22

Mechanical techniques for polishing the inside surface of niobium superconducting radio-frequency (SRF) cavities have been systematically explored. By extending known techniques to fine polishing, mirror-like finishes were produced, with <15 nm RMS (root mean square) roughness over 1 mm2 scan area. This is an order of magnitude less than the typical roughness produced by the electropolishing of niobium cavities. The extended mechanical polishing (XMP) process was applied to several SRF cavities which exhibited equator defects that caused quench at <20 MV m-1 and were not improved by further electropolishing. Cavity optical inspection equipment verified the complete removal of these defects, and minor acid processing, which dulled the mirror finish, restored performance of the defective cells to the high gradients and quality factors measured for adjacent cells when tested with other harmonics. This innate repair feature of XMP could be used to increase manufacturing yield. Excellent superconducting properties resulted after initial process optimization, with quality factor Q of 3 × 1010 and accelerating gradient of 43 MV m-1 being attained for a single-cell TESLA cavity, which are both close to practical limits. Several repaired nine-cell cavities also attained Q > 8 × 109 at 35 MV m-1, which is the specification for the International Linear Collider. Future optimization of the process and pathways for eliminating requirements for acid processing are also discussed.

Interface formation between hydrocarbon ring molecules and III-V semiconductor surfaces

Energy Technology Data Exchange (ETDEWEB)

Passmann, Regina

2008-08-15

In this work a systematical study to investigate the adsorption structures of small hydrocarbon ring shaped molecules on III-V semiconductor surfaces with Photo-Emission Spectroscopy (PES), Reflectance Anisotropy Spectroscopy (RAS), Scanning Tunneling Microscopy (STM) as well as Low Electron Energy Diffraction (LEED) was performed. To investigate the influence of the surface structure in detail the surface dimer configuration to the adsorption process of organic molecules GaAs(001) surfaces, the c(4 x 4), the (2 x 4) and the (4 x 2) have been investigated as well as the adsorption of cyclopentene on the InP(001)(2 x 4) reconstructed surface. In the direct comparison it is shown that cyclopentene bonds to the InP(001)(2 x 4) surface via a cycloaddition like reaction. During this adsorption the double bond splits which is in contrast to the adsorption of cyclopentene on the GaAs(001) surfaces. Therefrom it is concluded that the surface geometry has an influence on the resulting adsorption structure. In order to investigate the influence of the intra-molecular double bonds, cyclopentene (one double bond), 1,4-cyclohexadiene (two double bonds) and benzene (three double bonds) were used for the characterization of the interface formation. With the investigations on the GaAs(001) reconstructed surfaces it was shown that a dependency of the bonding configuration on the intra-molecular double bonds exists. During the adsorption of cyclopentene no evidence was found that the double bond has to be involved in the interface formation while during the adsorption of 1,4-cyclohexadiene and benzene the double bonds are involved. Furthermore it was found that a bonding to As atoms of the surface is more likely than a bonding to Ga atoms. (orig.)

Interface formation between hydrocarbon ring molecules and III-V semiconductor surfaces

International Nuclear Information System (INIS)

Passmann, Regina

2008-01-01

In this work a systematical study to investigate the adsorption structures of small hydrocarbon ring shaped molecules on III-V semiconductor surfaces with Photo-Emission Spectroscopy (PES), Reflectance Anisotropy Spectroscopy (RAS), Scanning Tunneling Microscopy (STM) as well as Low Electron Energy Diffraction (LEED) was performed. To investigate the influence of the surface structure in detail the surface dimer configuration to the adsorption process of organic molecules GaAs(001) surfaces, the c(4 x 4), the (2 x 4) and the (4 x 2) have been investigated as well as the adsorption of cyclopentene on the InP(001)(2 x 4) reconstructed surface. In the direct comparison it is shown that cyclopentene bonds to the InP(001)(2 x 4) surface via a cycloaddition like reaction. During this adsorption the double bond splits which is in contrast to the adsorption of cyclopentene on the GaAs(001) surfaces. Therefrom it is concluded that the surface geometry has an influence on the resulting adsorption structure. In order to investigate the influence of the intra-molecular double bonds, cyclopentene (one double bond), 1,4-cyclohexadiene (two double bonds) and benzene (three double bonds) were used for the characterization of the interface formation. With the investigations on the GaAs(001) reconstructed surfaces it was shown that a dependency of the bonding configuration on the intra-molecular double bonds exists. During the adsorption of cyclopentene no evidence was found that the double bond has to be involved in the interface formation while during the adsorption of 1,4-cyclohexadiene and benzene the double bonds are involved. Furthermore it was found that a bonding to As atoms of the surface is more likely than a bonding to Ga atoms. (orig.)

Atomic structure of surface defects in alumina studied by dynamic force microscopy: strain-relief-, translation- and reflection-related boundaries, including their junctions

International Nuclear Information System (INIS)

Simon, G H; König, T; Heinke, L; Lichtenstein, L; Heyde, M; Freund, H-J

2011-01-01

We present an extensive atomic resolution frequency modulation dynamic force microscopy study of ultrathin aluminium oxide on a single crystalline NiAl(110) surface. One-dimensional surface defects produced by domain boundaries have been resolved. Images are presented for reflection domain boundaries (RDBs), four different types of antiphase domain boundaries, a nucleation-related translation domain boundary and also domain boundary junctions. New structures and aspects of the boundaries and their network are revealed and merged into a comprehensive picture of the defect arrangements. The alumina film also covers the substrate completely at the boundaries and their junctions and follows the structural building principles found in its unit cell. This encompasses square and rectangular groups of surface oxygen sites. The observed structural elements can be related to the electronic signature of the boundaries and therefore to the electronic defects associated with the boundaries. A coincidence site lattice predicted for the RDBs is in good agreement with experimental data. With Σ = 19 it can be considered to be of low-sigma type, which frequently coincides with special boundary properties. Images of asymmetric RDBs show points of good contact alternating with regions of nearly amorphous disorder in the oxygen sublattice. (paper)

Round robin tests of the PISC III programme on defective steam generators tubes

International Nuclear Information System (INIS)

Birac, C.; Herkenrath, H.; Crutzen, S.; Miyake, Y.; Maciga, G.

1991-11-01

The PISC III actions are intended to extend the results and methodologies of the previous PISC exercises, i.e. the assessment of the capabilities of the various examination techniques when used on real or realistic flaws in real components under real conditions of inspection. Being aware of the industrial problems that the degradation of steam generator tubes can create, the PISC III management board decided to include in the PISC III programme a special action on steam generator tubes testing (SGT). (author)

Point defects and defect clusters examined on the basis of some fundamental experiments

International Nuclear Information System (INIS)

Zuppiroli, L.

1975-01-01

On progressing from the centre of the defect to the surface the theoretical approach to a point defect passes from electronic theories to elastic theory. Experiments by which the point defect can be observed fall into two categories. Those which detect long-range effects: measurement of dimensional variations in the sample; measurement of the mean crystal parameter variation; elastic X-ray scattering near the nodes of the reciprocal lattice (Huang scattering). Those which detect more local effects: low-temperature resistivity measurement; positron capture and annihilation; local scattering far from the reciprocal lattice nodes. Experiments involving both short and long-range effects can always be found. This is the case for example with the dechanneling of α particles by defects. Certain of the experimental methods quoted above apply also to the study of point defect clusters. These methods are illustrated by some of their most striking results which over the last twenty years have refined our knowledge of point defects and defect clusters: length and crystal parameter measurements; diffuse X-ray scattering; low-temperature resistivity measurements; ion emission microscopy; electron microscopy; elastoresistivity [fr

Eddy Current Testing for Detecting Small Defects in Thin Films

Science.gov (United States)

Obeid, Simon; Tranjan, Farid M.; Dogaru, Teodor

2007-03-01

Presented here is a technique of using Eddy Current based Giant Magneto-Resistance sensor (GMR) to detect surface and sub-layered minute defects in thin films. For surface crack detection, a measurement was performed on a copper metallization of 5-10 microns thick. It was done by scanning the GMR sensor on the surface of the wafer that had two scratches of 0.2 mm, and 2.5 mm in length respectively. In another experiment, metal coatings were deposited over the layers containing five defects with known lengths such that the defects were invisible from the surface. The limit of detection (resolution), in terms of defect size, of the GMR high-resolution Eddy Current probe was studied using this sample. Applications of Eddy Current testing include detecting defects in thin film metallic layers, and quality control of metallization layers on silicon wafers for integrated circuits manufacturing.

Pile-up and defective pulse rejection by pulse shape discrimination in surface barrier detectors

International Nuclear Information System (INIS)

Sjoeland, K.A.; Kristiansson, P.

1994-01-01

A technique to reject pile-up pulses and defective tail pulses from surface barrier detectors by the use of pulse shape discrimination is demonstrated. The electronic implementation of the pulse shape discrimination is based upon the zero crossing technique and for data reduction multiparameter techniques are used. The characteristic τ value for pile-up rejection is shown to be less than 56 ns. Its effect on detection limits from tail reduction in Particle Elastic Scattering Analysis (PESA) and pile-up peak suppression is discussed. ((orig.))

Bone compositional study during healing of subcritical calvarial defects in rats by Raman spectroscopy

Science.gov (United States)

Ahmed, Rafay; Wing Lun Law, Alan; Cheung, Tsz Wing; Lau, Condon

2017-07-01

Subcritical calvarial defects are important to study bone regeneration during healing. In this study 1mm calvarial defects were created using trephine in the parietal bones of Sprague-Dawley rats (n=7) that served as in vivo defects. Subjects were sacrificed after 7 days and the additional defects were created on the harvested skull with the same method to serve as control defects. Raman spectroscopy is established to investigate mineral/matrix ratio, carbonate/phosphate ratio and crystallinity of three different surfaces; in vivo defects, control defects and normal surface. Results show 21% and 23% decrease in mineral/matrix after 7 days of healing from surface to in vivo and control to in vivo defects, respectively. Carbonate to phosphate ratio was found to be increased by 39% while crystallinity decreased by 26% in both surface to in vivo and control to in vivo defects. This model allows to study the regenerated bone without mechanically perturbing healing surface.

Probing and Manipulating the Interfacial Defects of InGaAs Dual-Layer Metal Oxides at the Atomic Scale.

Science.gov (United States)

Wu, Xing; Luo, Chen; Hao, Peng; Sun, Tao; Wang, Runsheng; Wang, Chaolun; Hu, Zhigao; Li, Yawei; Zhang, Jian; Bersuker, Gennadi; Sun, Litao; Pey, Kinleong

2018-01-01

The interface between III-V and metal-oxide-semiconductor materials plays a central role in the operation of high-speed electronic devices, such as transistors and light-emitting diodes. The high-speed property gives the light-emitting diodes a high response speed and low dark current, and they are widely used in communications, infrared remote sensing, optical detection, and other fields. The rational design of high-performance devices requires a detailed understanding of the electronic structure at this interface; however, this understanding remains a challenge, given the complex nature of surface interactions and the dynamic relationship between the morphology evolution and electronic structures. Herein, in situ transmission electron microscopy is used to probe and manipulate the structural and electrical properties of ZrO 2 films on Al 2 O 3 and InGaAs substrate at the atomic scale. Interfacial defects resulting from the spillover of the oxygen-atom conduction-band wavefunctions are resolved. This study unearths the fundamental defect-driven interfacial electric structure of III-V semiconductor materials and paves the way to future high-speed and high-reliability devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Third programme for the inspection of steel components (PISC III): an introduction

International Nuclear Information System (INIS)

Crutzen, S.

1988-01-01

The purpose of the Third Programme for the Inspection of Steel Components PISC III is to amplify, verify and validate aspects revealed by the PISC II work. To do this the programme is to consider real defects, real geometries in real surroundings, and complementary laboratory exercises and validation of mathematical models. A description is given of the motivation and objectives of PISC III, terms of reference for PISC III and the programme for PISC III. (U.K.)

Making progress with PISC III

International Nuclear Information System (INIS)

Crutzen, S.; Nichols, R.; McDonald, N.

1989-01-01

The thirdphase of the Programme for the Inspection of Steel Components (PISC III) was begun in 1986 with the aim of assessing inspection capability and reliability for actual defects in full scale components under realistic nuclear power plant conditions. It is organized by the OECD Nuclear Energy Agency and the Ispra Joint Research Centre of the European Communities Commission. The objectives and status of each of the seven areas of PISC III are given. The areas are: real contaminated structures; full scale vessel tests; nozzles and dissimilar metal welds; austenitic steel testing; steam generator integrity testing; mathematical modelling of non-destructive examination; and human reliability studies. (U.K.)

Low-temperature electron irradiation induced defects in gallium arsenide: bulk and surface acoustic wave studies

International Nuclear Information System (INIS)

Brophy, M.J. Jr.

1985-01-01

Irradiation of GaAs with 2.25 to 2.5 MeV electrons at temperatures below 190 K produces two peaks in ultrasonic attenuation versus temperature. The defects responsible for both peaks have trigonal symmetry and were observed in n-type and semi-insulating GaAs with bulk and surface acoustic waves (SAW) respectively. Bulk waves at eight frequencies between 9 and 130 MHz and SAW at 73 and 145 MHz were used. The reorientation kinetics of both peaks follow the Arrhenius law. The annealing of both peaks was studied with isochronal and isothermal anneals in the temperature range 200 to 335 K. Peak I anneals with a spectrum of activation energies in the range 0.7-1.1 eV between 220 and 335 K. Peak II anneals with a single activation energy of about 1.1 eV above 300K. The different annealing characteristics indicate that these peaks represent two distinct defects. The annealing above 300 K has not been seen in electrical resistivity measurements, but was observed in earlier length change experiments. Irradiation of GaAs:Cr produces no Cr-radiation defect complexes. The attenuation peak associated with Cr 2+ decrease with electron dose, but starts to recover at 150 K

Effect of thermal treatment on the density of radiation-induced defects in dielectrics and on the semiconductor surface of silicon MDS structures

International Nuclear Information System (INIS)

Daliev, Kh.S.; Lebedev, A.A.; Ehkke, V.; 3425000DD)

1987-01-01

Isochronous annealing of radiation defects formed under MIS structure irradiation by γ-quanta at the presence of shift stress on a metal electrode is studied. Complex measurements of non-stationary capacitance spectroscopy and volt-farad characteristics (VFC) have shown that a built-in charge and volumetric states (VS) of the dielectric are annealed at 250 deg C, fast surface states (SS) - at 350 deg C, and the characteristic radiation defect in the Si-SiO 2 transition layer is completely annealed only at 400 deg C. Additional VS and SS occurring in the structures at positive shift on the metal electrode under radiation are annealed at 120 deg C, the kinetics of defect annealing at higher temperatures is independent from shift polarity. SS density calculated by VFC is determined in reality by recharging not only SS but some VS of the dielectric in the range of width of the order of 3.5 nm from the surface of the semiconductor

Thermoluminescence and cathodoluminescence studies of calcite and MgO: surface defects and heat treatment

International Nuclear Information System (INIS)

Goeksu, H.Y.; Brown, L.M.

1988-01-01

Some of the problems which preclude accurate thermoluminescence (TL) dating of geologically formed calcite stem from different sample pre-treatment procedures, such as grinding, drilling or pre-heating. It has long been known that grinding can introduce spurious TL in calcite, but there have been wide differences of opinion as to the magnitude of the influence and its importance. Therefore, various grinding and acid-washing procedures have been suggested to avoid spurious thermoluminescence. Various models have been developed to explain the mechanism. We have studied the changes in thermoluminescence (TL) and cathodoluminescence (CL) properties as well as in the spectral composition of the glow from calcite and MgO due to surface defects and heat treatment. It is found that both laboratory heat treatment and surface indents give rise to changes in TL efficiency. (author)

Correlation between bulk- and surface chemistry of Cr-tanned leather and the release of Cr(III) and Cr(VI)

Energy Technology Data Exchange (ETDEWEB)

Hedberg, Yolanda S., E-mail: yolanda@kth.se [KTH Royal Institute of Technology, School of Chemical Science and Engineering, Department of Chemistry, Division of Surface and Corrosion Science, SE-10044 Stockholm (Sweden); Institute of Environmental Medicine, Karolinska Institutet, Box 210, SE-17177 Stockholm (Sweden); Lidén, Carola, E-mail: carola.liden@ki.se [Institute of Environmental Medicine, Karolinska Institutet, Box 210, SE-17177 Stockholm (Sweden); Odnevall Wallinder, Inger, E-mail: ingero@kth.se [KTH Royal Institute of Technology, School of Chemical Science and Engineering, Department of Chemistry, Division of Surface and Corrosion Science, SE-10044 Stockholm (Sweden)

2014-09-15

Graphical abstract: - Highlights: • Released reducing/complexing leather-specific species can reduce released Cr(VI). • No co-released species enable the formation of Cr(VI) in solution. • The major Cr species released from leather in phosphate buffer was Cr(III) (>82%). • No Cr(VI) was released into artificial sweat. - Abstract: About 1–3% of the adult general population in Europe is allergic to chromium (Cr). The assessment of the potential release of Cr(III) and Cr(VI) from leather is hence important from a human health and environmental risk perspective. The Cr(VI) content in leather was recently restricted in the European Union. The aim of this study was to assess possible correlations between the bulk and surface chemistry of leather, released Cr(III) and Cr(VI), and capacities of co-released leather specific species to reduce and complex released Cr. Four differently tanned leathers were characterized by scanning electron microscopy with energy dispersive spectroscopy, X-ray photoelectron spectroscopy, attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, and the diphenylcarbazide colorimetric method. Their characteristics were compared with results on Cr(III) and Cr(VI) release into artificial sweat (ASW, pH < 6.5) and phosphate buffer (PB, pH 7.5–8.0), measured by means of spectrophotometry and atomic absorption spectroscopy. Co-released leather-specific species were shown to reduce Cr(VI), both in ASW and in PB. Their reduction capacities correlated with findings of the surface content of Cr and of released Cr. Leather samples without this capacity, and with less aromatic surface groups visible by ATR-FTIR, revealed Cr(VI) both at the surface and in solution (PB)

Theory of differential and integral scattering of laser radiation by a dielectric surface taking a defect layer into account

NARCIS (Netherlands)

Azarova, VV; Dmitriev, VG; Lokhov, YN; Malitskii, KN

The differential and integral light scattering by dielectric surfaces is studied theoretically taking a thin nearsurface defect layer into account. The expressions for the intensities of differential and total integral scattering are found by the Green function method. Conditions are found under

Surface defect chemistry and oxygen exchange kinetics in La2-xCaxNiO4+δ

Science.gov (United States)

Tropin, E. S.; Ananyev, M. V.; Farlenkov, A. S.; Khodimchuk, A. V.; Berenov, A. V.; Fetisov, A. V.; Eremin, V. A.; Kolchugin, A. A.

2018-06-01

Surface oxygen exchange kinetics and diffusion in La2-xCaxNiO4+δ (x = 0; 0.1; 0.3) have been studied by the isotope exchange method with gas phase equilibration in the temperature range of 600-800 °C and oxygen pressure range 0.13-2.5 kPa. Despite an enhanced electrical conductivity of La2-xCaxNiO4+δ theirs oxygen surface exchange (k*) and oxygen tracer diffusion (D*) coefficients were significantly lower in comparison with La2NiO4+δ. The rates of the elementary stages of oxygen exchange have been calculated. Upon Ca doping the change of the rate-determining stage was observed. The surface of the oxides was found to be inhomogeneous towards oxygen exchange process according to the recently developed model. The reasons of such inhomogeneity are discussed as well as Ca influence on the surface defect chemistry and oxygen surface exchange and diffusivity.

Application of pulsed flash thermography method for specific defect estimation in aluminum

Directory of Open Access Journals (Sweden)

Tomić Ljubiša D.

2015-01-01

Full Text Available Nondestructive thermal examination can uncover the presence of defects via temperature distribution profile anomalies that are created on the surface as a result of a defect. There are many factors that affect the temperature distribution map of the surface being tested by Infrared Thermography. Internal defect properties such as thermal conductivity, heat capacity and defect depth, play an important role in the temperature behavior of the pixels or regions being analyzed. Also, it is well known that other external factors such as the convection heat transfer, variations on the surface emissivity and ambient radiation reflectivity can affect the thermographic signal received by the infrared camera. In this paper we considered a simple structure in the form of flat plate covered with several defects, whose surface we heated with a uniform heat flux impulse. We conducted a theoretical analysis and experimental test of the method for case of defects on an aluminum surface. First, experiments were conducted on surfaces with intentionally created defects in order to determine conditions and boundaries for application of the method. Experimental testing of the pulsed flash thermography (PFT method was performed on simulated defects on an aluminum test plate filled with air and organic compound n-hexadecane, hydrocarbon that belongs to the Phase Change Materials (PCMs. Study results indicate that it is possible, using the PFT method, to detect the type of material inside defect holes, whose presence disturbs the homogeneous structure of aluminum.

The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

International Nuclear Information System (INIS)

Wang, H; Jiang, D S; Zhu, J J; Zhao, D G; Liu, Z S; Wang, Y T; Zhang, S M; Yang, H

2009-01-01

The effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 °C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 °C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved

In-situ determination of electronic surface and volume defect density of amorphous silicon (a-Si:H) and silicon alloys

International Nuclear Information System (INIS)

Siebke, F.

1992-07-01

The density of localized gap states in the bulk and in the near-surface region of amorphous hydrogenated silicon (a-Si:H) was measured for non oxidized undoped, B-doped and P-doped samples as well as for films with low carbon (C) and germanium (Ge) content. Also the influence of light soaking on the bulk and surface density of states was investigated. The samples were prepared by rf glow discharge in an UHV-system at substrate temperatures between 100degC and 400degC and transferred to the analysis chamber by a vacuum lock. We combined the constant photocurrent method (CPM) and the total-yield photoelectron spectroscopy (TY) to obtain in-situ information about the defect densities. While the first method yields information about the density of states in the bulk, the other method obtains the density of occupied states in the near-surface region. The mean information depth of the TY-measurements is limited by the escape lenght of photoelectrons and can be estimated to 5 nm. In addition to the defect density the position of the Fermi energy was determined for the bulk by dark conductivity measurements and at the surface using a calibrated Kelvin probe. (orig.)

DX centers in III-V semiconductors under hydrostatic pressure

International Nuclear Information System (INIS)

Wolk, J.A.

1992-11-01

DX centers are deep level defects found in some III-V semiconductors. They have persistent photoconductivity and large difference between thermal and optical ionization energies. Hydrostatic pressure was used to study microstructure of these defects. A new local vibrational mode (LVM) was observed in hydrostatically stressed, Si-doped GaAs. Corresponding infrared absorption peak is distinct from the Si Ga shallow donor LVM peak, which is the only other LVM peak observed in our samples, and is assigned to the Si DX center. Analysis of the relative intensities of the Si DX LVM and the Si shallow donor LVM peaks, combined with Hall effect and resistivity indicate that the Si DX center is negatively charged. Frequency of this new mode provides clues to the structure of this defect. A pressure induced deep donor level in S-doped InP was also discovered which has the properties of a DX center. Pressure at which the new defect becomes more stable than the shallow donor is 82 kbar. Optical ionization energy and energy dependence of the optical absorption cross section was measured for this new effect. Capture barrier from the conduction band into the DX state were also determined. That DX centers can be formed in InP by pressure suggests that DX states should be common in n-type III-V semiconductors. A method is suggested for predicting under what conditions these defects will be the most stable form of the donor impurity

Intrinsic thermal expansion of crystal defects

International Nuclear Information System (INIS)

Ganne, J.-P.

1981-02-01

Although the phenomenon of thermal expansion has long been known, the intrinsic thermal expansion coefficient (ITEC) βsub(d) of a point defect, derived from its formation volume vsub(d), has never been measured directly. The differential dilatometer by interferometry built by ASTY and GILDER is described. It has allowed βsub(d) to be measured for several defects. Vacancies and small interstitial loops were produced in aluminium by low temperature (20 K) fast neutron irradiation followed by an anneal up to the beginning of stage III (160 K). The very high value of the measured ratio βsub(d)/β 0 (12+-4) is comparable with a lattice statics calculated (42) value (11.5 0 [fr

A Black Phosphate Conversion Coating on Steel Surface Using Antimony(III)-Tartrate as an Additive

Science.gov (United States)

Li, Feng; Wang, Guiping

2016-05-01

A novel black phosphate conversion coating was formed on steel surface through a Zn-Mn phosphating bath containing mainly ZnO, H3PO4, Mn(H2PO4)2, and Ca(NO3)2, where antimony(III)-tartrate was used as the blackening agent of phosphatization. The surface morphology and composition of the coating were characterized by scanning electron microscopy, energy dispersion spectroscopy, and x-ray photoelectron spectroscopy. Corrosion resistance of the coating was studied by potentiodynamic polarization curves and electrochemical impedance spectroscopy. The pH value of the solution had significant influence on the formation and corrosion resistance of the coating. The experimental results indicated that the Sb plays a vital role in the blackening of phosphate conversion coating. The optimal concentration of antimony(III)-tartrate in the phosphating bath used in this experiment was 1.0 g L-1, as higher values reduced the corrosion resistance of the coating. In addition, by saponification and oil seals, the corrosion duration of the black phosphate coating in a copper sulfate spot test can be as long as 20 min.

First-Principles Investigations of Defects in Minerals

Science.gov (United States)

Verma, Ashok K.

2011-07-01

The ideal crystal has an infinite 3-dimensional repetition of identical units which may be atoms or molecules. But real crystals are limited in size and they have disorder in stacking which as called defects. Basically three types of defects exist in solids: 1) point defects, 2) line defects, and 3) surface defects. Common point defects are vacant lattice sites, interstitial atoms and impurities and these are known to influence strongly many solid-state transport properties such as diffusion, electrical conduction, creep, etc. In thermal equilibrium point defects concentrations are determined by their formation enthalpies and their movement by their migration barriers. Line and surface defects are though absent from the ideal crystal in thermal equilibrium due to higher energy costs but they are invariably present in all real crystals. Line defects include edge-, screw- and mixed-dislocations and their presence is essential in explaining the mechanical strength and deformation of real crystals. Surface defects may arise at the boundary between two grains, or small crystals, within a larger crystal. A wide variety of grain boundaries can form in a polycrystal depending on factors such growth conditions and thermal treatment. In this talk we will present our first-principles density functional theory based defect studies of SiO2 polymorphs (stishovite, CaCl2-, α-PbO2-, and pyrite-type), Mg2SiO4 polymorphs (forsterite, wadsleyite and ringwoodite) and MgO [1-3]. Briefly, several native point defects including vacancies, interstitials, and their complexes were studied in silica polymorphs upto 200 GPa. Their values increase by a factor of 2 over the entire pressure range studied with large differences in some cases between different phases. The Schottky defects are energetically most favorable at zero pressure whereas O-Frenkel pairs become systematically more favorable at pressures higher than 20 GPa. The geometric and electronic structures of defects and migrating

A density functional study of NO{sub 2} adsorption on perfect and defective MgO (1 0 0) and Li/MgO (1 0 0) surfaces

Energy Technology Data Exchange (ETDEWEB)

Eid, Kh.M., E-mail: Khaled_eid@edu.asu.edu.eg [Physics Department, Faculty of Education, Ain Shams University, P.O. Box 11757, Cairo (Egypt); Ammar, H.Y. [Physics Department, Faculty of Education, Ain Shams University, P.O. Box 11757, Cairo (Egypt); Department of Physics, Faculty of Science, Najran University, Najran (Saudi Arabia)

2012-07-15

The density functional theory (DFT) in combination with embedded cluster model have been used to study the adsorption of nitrogen dioxide molecule (NO{sub 2}) on Li atom deposited on the surfaces of metal oxide MgO (1 0 0) on both anionic (O{sup 2-}) and defect (F{sub s} and F{sub s}{sup +}-centers) sites. The adsorption energy (E{sub ads}) of NO{sub 2} molecule (N-down as well as O-down) in different positions on O{sup -2}, F{sub s} and F{sub s}{sup +}-sites is considered. The geometrical optimizations have been done for the additive materials and MgO substrate surfaces. The formation energies have been evaluated for F{sub s} and F{sub s}{sup +} of MgO substrate surfaces. The ionization potential (IP) and electron affinity (eA) for defect free and defect containing surfaces have been calculated. The adsorption properties of NO{sub 2} are analyzed in terms of the adsorption energy, the electron donation (basicity), the elongation of N-O bond length and the atomic charges on adsorbed materials. The densities of states (DOS) have been calculated and used for examining the adsorption properties. The NO{sub 2} molecule is dissociated due to the interaction with the defective substrate surface (F{sub s}-site) producing an oxygen atom strongly chemisorbed to the vacancy of the substrate and gaseous NO far away from the surface. The presence of the Li atom increases the surface chemistry of the anionic O{sup 2-}-site of MgO substrate surfaces (converted from physisorption to chemisorption). On the other hand, the presence of the Li atom decreases the surface chemistry of the F{sub s} and F{sub s}{sup +}-sites of MgO substrate surfaces. Generally, the NO{sub 2} molecule is strongly adsorbed (chemisorption) on the MgO substrate surfaces containing F{sub s} and F{sub s}{sup +}-centers.

PREFACE: The International Workshop on Positron Studies of Defects 2014

Science.gov (United States)

Sugita, Kazuki; Shirai, Yasuharu

2016-01-01

The International Workshop on Positron Studies of Defects 2014 (PSD-14) was held in Kyoto, Japan from 14-19 September, 2014. The PSD Workshop brought together positron scientists interested in studying defects to an international platform for presenting and discussing recent results and achievements, including new experimental and theoretical methods in the field. The workshop topics can be characterized as follows: • Positron studies of defects in semiconductors and oxides • Positron studies of defects in metals • New experimental methods and equipment • Theoretical calculations and simulations of momentum distributions, positron lifetimes and other characteristics for defects • Positron studies of defects in combination with complementary methods • Positron beam studies of defects at surfaces, interfaces, in sub-surface regions and thin films • Nanostructures and amorphous materials

Electrochemical deposition on surface nanometric defects: Thermodynamics and grand canonical Monte Carlo simulations

International Nuclear Information System (INIS)

Luque, Noelia B.; Reinaudi, Luis; Serra, Pablo; Leiva, Ezequiel P.M.

2009-01-01

A thermodynamic analysis is performed on electrochemical metal deposition in the cavity of a foreign substrate. In particular, the deposition of Cu and Ag in nanometer-sized holes on Au(1 1 1) is studied by means of off-lattice atomistic Grand Canonical Monte Carlo simulations, using embedded atom method potentials. The present simulation conditions emulate experiments of electrochemical metal deposition in nanocavities, as performed in the literature. Depending on the system, remarkable differences are found in the way in which the defects are decorated, as well as in their energetics. When the interaction of the adsorbate atoms with the substrate is less favorable than the bulk interaction of the adsorbate, clusters are found that grow stepwise over the level of the surface. In the opposite case, the filling of the cavity occurs stepwise, without the occurrence of cluster growth above the surface level. The results of the simulations present a good qualitative agreement with experimental results from the literature

Annotated bibliography for liquid metal surface tensions of groups III-A, IV-A, and V-A metals

International Nuclear Information System (INIS)

Murtha, M.J.; Burnet, G.

1976-04-01

An annotated bibliography has been prepared which includes summaries of 82 publications dating from 1920 and dealing with the measurement of the surface tensions of Groups III-A, IV-A, and V-A metals in the liquid state. The bibliography is organized by key element investigated, and contains a tabulation of correlations for surface tension as a function of temperature. A brief discussion dealing with variables and methods has been included

Cellular structure formed by ion-implantation-induced point defect

International Nuclear Information System (INIS)

Nitta, N.; Taniwaki, M.; Hayashi, Y.; Yoshiie, T.

2006-01-01

The authors have found that a cellular defect structure is formed on the surface of Sn + ion implanted GaSb at a low temperature and proposed its formation mechanism based on the movement of the induced point defects. This research was carried out in order to examine the validity of the mechanism by clarifying the effect of the mobility of the point defects on the defect formation. The defect structure on the GaSb surfaces implanted at cryogenic temperature and room temperature was investigated by scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM) observation. In the sample implanted at room temperature, the sponge-like structure (a pileup of voids) was formed and the cellular structure, as observed at a low temperature, did not develop. This behavior was explained by the high mobility of the vacancies during implantation at room temperature, and the proposed idea that the defect formation process is dominated by the induced point defects was confirmed

Detection of paint polishing defects

Science.gov (United States)

Rebeggiani, S.; Wagner, M.; Mazal, J.; Rosén, B.-G.; Dahlén, M.

2018-06-01

Surface finish plays a major role on perceived product quality, and is the first thing a potential buyer sees. Today end-of-line repairs of the body of cars and trucks are inevitably to secure required surface quality. Defects that occur in the paint shop, like dust particles, are eliminated by manual sanding/polishing which lead to other types of defects when the last polishing step is not performed correctly or not fully completed. One of those defects is known as ‘polishing roses’ or holograms, which are incredibly hard to detect in artificial light but are clearly visible in sunlight. This paper will present the first tests with a measurement set-up newly developed to measure and analyse polishing roses. The results showed good correlations to human visual evaluations where repaired panels were estimated based on the defects’ intensity, severity and viewing angle.

Electronic Structure of the Perylene / Zinc Oxide Interface: A Computational Study of Photoinduced Electron Transfer and Impact of Surface Defects

KAUST Repository

Li, Jingrui

2015-07-29

The electronic properties of dye-sensitized semiconductor surfaces consisting of pery- lene chromophores chemisorbed on zinc oxide via different spacer-anchor groups, have been studied at the density-functional-theory level. The energy distributions of the donor states and the rates of photoinduced electron transfer from dye to surface are predicted. We evaluate in particular the impact of saturated versus unsaturated aliphatic spacer groups inserted between the perylene chromophore and the semiconductor as well as the influence of surface defects on the electron-injection rates.

Electronic Structure of the Perylene / Zinc Oxide Interface: A Computational Study of Photoinduced Electron Transfer and Impact of Surface Defects

KAUST Repository

Li, Jingrui; Li, Hong; Winget, Paul; Bredas, Jean-Luc

2015-01-01

The electronic properties of dye-sensitized semiconductor surfaces consisting of pery- lene chromophores chemisorbed on zinc oxide via different spacer-anchor groups, have been studied at the density-functional-theory level. The energy distributions of the donor states and the rates of photoinduced electron transfer from dye to surface are predicted. We evaluate in particular the impact of saturated versus unsaturated aliphatic spacer groups inserted between the perylene chromophore and the semiconductor as well as the influence of surface defects on the electron-injection rates.

Polydispersity-driven topological defects as order-restoring excitations.

Science.gov (United States)

Yao, Zhenwei; Olvera de la Cruz, Monica

2014-04-08

The engineering of defects in crystalline matter has been extensively exploited to modify the mechanical and electrical properties of many materials. Recent experiments on manipulating extended defects in graphene, for example, show that defects direct the flow of electric charges. The fascinating possibilities offered by defects in two dimensions, known as topological defects, to control material properties provide great motivation to perform fundamental investigations to uncover their role in various systems. Previous studies mostly focus on topological defects in 2D crystals on curved surfaces. On flat geometries, topological defects can be introduced via density inhomogeneities. We investigate here topological defects due to size polydispersity on flat surfaces. Size polydispersity is usually an inevitable feature of a large variety of systems. In this work, simulations show well-organized induced topological defects around an impurity particle of a wrong size. These patterns are not found in systems of identical particles. Our work demonstrates that in polydispersed systems topological defects play the role of restoring order. The simulations show a perfect hexagonal lattice beyond a small defective region around the impurity particle. Elasticity theory has demonstrated an analogy between the elementary topological defects named disclinations to electric charges by associating a charge to a disclination, whose sign depends on the number of its nearest neighbors. Size polydispersity is shown numerically here to be an essential ingredient to understand short-range attractions between like-charge disclinations. Our study suggests that size polydispersity has a promising potential to engineer defects in various systems including nanoparticles and colloidal crystals.

Defect-mediated magnetism of transition metal doped zinc oxide thin films

Science.gov (United States)

Roberts, Bradley Kirk

Magnetism in transition metal doped wide band-gap materials is of interest to further the fundamental science of materials and future spintronics applications. Large inter-dopant separations require mediation of ferromagnetism by some method; carrier-mediated mechanisms are typically applicable to dilute magnetic semiconductors with low Curie temperatures. Dilute magnetic oxides, commonly with poor conductivity and TC above room temperature, cannot be described within this theory. Recent experiment and theory developments suggest that ferromagnetic exchange in these materials can be mediated by defects. This research includes experimental results justifying and developing this approach. Thin films of Cr doped ZnO (band gap ˜3.3 eV) were deposited with several processing variations to enhance the effects of either 0-dimensional (vacancy, hydrogen-related defect) or two-dimensional defects (surface/interface) and thereby affect magnetism and conductivity. We observe surface magnetism in dielectric thin films of oxygen-saturated ZnO:Cr with spontaneous magnetic moment and conductance dropping approximately exponentially with increasing thickness. Uniform defect concentrations would not result in such magnetic ordering behavior indicating that magnetism is mediated either by surface defects or differing concentrations of point defects near the surface. Polarized neutron reflectivity profiling confirms a magnetically active region of ˜8 nm at the film surface. Hydrogen is notoriously present as a defect and carrier dopant in ZnO, and artificial introduction of hydrogen in dielectric ZnO:Cr films results in varying electronic and magnetic behavior. Free carriers introduced with hydrogen doping are not spin-polarized requiring an alternative explanation for ferromagnetism. We find from positron annihilation spectroscopy measurements that hydrogen doping increases the concentration of an altered VZn-related defect (a preliminary interpretation) throughout the film, which

GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction

Energy Technology Data Exchange (ETDEWEB)

Orzali, Tommaso, E-mail: tommaso.orzali@sematech.org; Vert, Alexey; O' Brien, Brendan; Papa Rao, Satyavolu S. [SEMATECH, 257 Fuller Rd Suite 2200, Albany, New York 12203 (United States); Herman, Joshua L.; Vivekanand, Saikumar [College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, 251 Fuller Road, Albany, New York 12203 (United States); Hill, Richard J. W. [Now at Micron Technologies, 8000 S Federal Way, Boise, Idaho 83716 (United States); Karim, Zia [AIXTRON, Inc., 1139 Karlstad Dr., Sunnyvale, California 94089 (United States)

2015-09-14

The Aspect Ratio Trapping technique has been extensively evaluated for improving the quality of III-V heteroepitaxial films grown on Si, due to the potential for terminating defects at the sidewalls of SiO{sub 2} patterned trenches that enclose the growth region. However, defects propagating along the trench direction cannot be effectively confined with this technique. We studied the effect of the trench bottom geometry on the density of defects of GaAs fins, grown by metal-organic chemical vapor deposition on 300 mm Si (001) wafers inside narrow (<90 nm wide) trenches. Plan view and cross sectional Scanning Electron Microscopy and Transmission Electron Microscopy, together with High Resolution X-Ray Diffraction, were used to evaluate the crystal quality of GaAs. The prevalent defects that reach the top surface of GaAs fins are (111) twin planes propagating along the trench direction. The lowest density of twin planes, ∼8 × 10{sup 8 }cm{sup −2}, was achieved on “V” shaped bottom trenches, where GaAs nucleation occurs only on (111) Si planes, minimizing the interfacial energy and preventing the formation of antiphase boundaries.

Mixed nano/micro-sized calcium phosphate composite and EDTA root surface etching improve availability of graft material in intrabony defects: an in vivo scanning electron microscopy evaluation.

Science.gov (United States)

Gamal, Ahmed Y; Iacono, Vincent J

2013-12-01

The use of nanoparticles of graft materials may lead to breakthrough applications for periodontal regeneration. However, due to their small particle size, nanoparticles may be eliminated from periodontal defects by phagocytosis. In an attempt to improve nanoparticle retention in periodontal defects, the present in vivo study uses scanning electron microscopy (SEM) to evaluate the potential of micrograft particles of β-tricalcium phosphate (β-TCP) to enhance the binding and retention of nanoparticles of hydroxyapatite (nHA) on EDTA-treated and non-treated root surfaces in periodontal defects after 14 days of healing. Sixty patients having at least two hopeless periodontally affected teeth designated for extraction were randomly divided into four treatment groups (15 patients per group). Patients in group 1 had selected periodontal intrabony defects grafted with nHA of particle size 10 to 100 nm. Patients in group 2 were treated in a similar manner but had the affected roots etched for 2 minutes with a neutral 24% EDTA gel before grafting of the associated vertical defects with nHA. Patients in group 3 had the selected intrabony defects grafted with a composite graft consisting of equal volumes of nHA and β-TCP (particle size 63 to 150 nm). Patients in group 4 were treated as in group 3 but the affected roots were etched with neutral 24% EDTA as in group 2. For each of the four groups, one tooth was extracted immediately, and the second tooth was extracted after 14 days of healing for SEM evaluation. Fourteen days after surgery, all group 1 samples were devoid of any nanoparticles adherent to the root surfaces. Group 2 showed root surface areas 44.7% covered by a single layer of clot-blended grafted particles 14 days following graft application. After 14 days, group 3 samples appeared to retain fibrin strands devoid of grafted particles. Immediately extracted root samples of group 4 had adherent graft particles that covered a considerable area of the root surfaces

Modelling Eu(III) speciation in a Eu(III)/PAHA/α-Al2O3 ternary system

International Nuclear Information System (INIS)

Janot, Noemie; Reiller, Pascal E.; Benedetti, Marc F.

2013-01-01

In this work, modelling of Eu(III) speciation in a ternary system, i.e., in presence of purified Aldrich humic acid (PAHA) and α-Al 2 O 3 , is presented. First, the mineral surface charge is measured by potentiometric titrations and then described using the CD-MUSIC model. This model is also used to describe Eu(III) binding to the α-Al 2 O 3 surface at different pH values, ionic strength and mineral concentrations. Time resolved luminescence spectroscopy (TRLS) is then used to study the binding of Eu(III) to PAHA at pH 4 with different humic acid concentrations. The spectra are used to calculate a spectroscopic 'titration curve', used to determine Eu(III)/PAHA binding parameters in the NICA-Donnan model. Following a previous study (Janot et al., Water Res. 46, 731-740), modelling of the ternary system is based upon the definition of two PAHA pools where one fraction remains in solution and the other is adsorbed onto the mineral surface, with each possessing different proton and metal binding parameters. The modification of protonation behaviour for both fractions is examined using spectrophotometric titrations of the non adsorbed PAHA fraction at different organic/mineral ratios. These data are then used to describe Eu(III) interactions in the ternary system: Eu(III) re-partitioning in the ternary system is calculated for different pH, ionic strength and PAHA concentrations, and results are compared to experimental observations. The model is in good agreement with experimental data, except at high PAHA fractionation rates. Results show that organic complexation dominates over a large pH range, with the predominant species existing as the surface-bound fraction. Above pH 8, Eu(III) seems to be mostly complexed to the mineral surface, which is in agreement with previous spectroscopic observations (Janot et al., Environ. Sci. Technol. 45, 3224-3230). (authors)

A Simple Small Size and Low Cost Sensor Based on Surface Plasmon Resonance for Selective Detection of Fe(III

Directory of Open Access Journals (Sweden)

Nunzio Cennamo

2014-03-01

Full Text Available A simple, small size, and low cost sensor based on a Deferoxamine Self Assembled Monolayer (DFO-SAM and Surface Plasmon Resonance (SPR transduction, in connection with a Plastic Optical Fiber (POF, has been developed for the selective detection of Fe(III. DFO-SAM sensors based on appropriate electrochemical techniques can be frequently found in the scientific literature. In this work, we present the first example of a DFO-SAM sensor based on SPR in an optical fiber. The SPR sensing platform was realized by removing the cladding of a plastic optical fiber along half the circumference, spin coating a buffer of Microposit S1813 photoresist on the exposed core, and finally sputtering a thin gold film. The hydroxamate siderophore deferoxamine (DFO, having high binding affinity for Fe(III, is then used in its immobilized form, as self-assembled monolayer on the gold layer surface of the POF sensor. The results showed that the DFO-SAM-POF-sensor was able to sense the formation of the Fe(III/DFO complex in the range of concentrations between 1 μm and 50 μm with a linearity range from 0 to 30 μm of Fe(III. The selectivity of the sensor was also proved by interference tests.

A simple small size and low cost sensor based on surface plasmon resonance for selective detection of Fe(III).

Science.gov (United States)

Cennamo, Nunzio; Alberti, Giancarla; Pesavento, Maria; D'Agostino, Girolamo; Quattrini, Federico; Biesuz, Raffaela; Zeni, Luigi

2014-03-07

A simple, small size, and low cost sensor based on a Deferoxamine Self Assembled Monolayer (DFO-SAM) and Surface Plasmon Resonance (SPR) transduction, in connection with a Plastic Optical Fiber (POF), has been developed for the selective detection of Fe(III). DFO-SAM sensors based on appropriate electrochemical techniques can be frequently found in the scientific literature. In this work, we present the first example of a DFO-SAM sensor based on SPR in an optical fiber. The SPR sensing platform was realized by removing the cladding of a plastic optical fiber along half the circumference, spin coating a buffer of Microposit S1813 photoresist on the exposed core, and finally sputtering a thin gold film. The hydroxamate siderophore deferoxamine (DFO), having high binding affinity for Fe(III), is then used in its immobilized form, as self-assembled monolayer on the gold layer surface of the POF sensor. The results showed that the DFO-SAM-POF-sensor was able to sense the formation of the Fe(III)/DFO complex in the range of concentrations between 1 μm and 50 μm with a linearity range from 0 to 30 μm of Fe(III). The selectivity of the sensor was also proved by interference tests.

Surface Oxidation of the High-Strength Steels Electrodeposited with Cu or Fe and the Resultant Defect Formation in Their Coating during the Following Galvanizing and Galvannealing Processes

Science.gov (United States)

Choi, Yun-Il; Beom, Won-Jin; Park, Chan-Jin; Paik, Doojin; Hong, Moon-Hi

2010-12-01

This study examined the surface oxidation of high-strength steels electrodeposited with Cu or Fe and the resultant defect formation in their coating during the following galvanizing and galvannealing processes. The high-strength steels were coated with an Cu or Fe layer by the electroplating method. Then, the coated steels were annealed in a reducing atmosphere, dipped in a molten zinc, and finally transformed into galvannealed steels through the galvannealing process. The formation of Si and Mn oxides on the surface of the high-strength steel was effectively suppressed, and the density of surface defects on the galvanized steel was significantly reduced by the pre-electrodeposition of Cu and Fe. This effect was more prominent for the steels electrodeposited at higher cathodic current densities. The finer electrodeposit layer formed at higher cathodic current density on the steels enabled the suppression of partial surface oxidation by Mn or Si and better wetting of Zn on the surface of the steels in the following galvanizing process. Furthermore, the pre-electrodeposited steels exhibited a smoother surface without surface cracks after the galvannealing process compared with the untreated steel. The diffusion of Fe and Zn in the Zn coating layer in the pre-electrodeposited steels appears to occur more uniformly during the galvannealing process due to the low density of surface defects induced by oxides.

XAS signatures of Am(III) adsorbed onto magnetite and maghemite

DEFF Research Database (Denmark)

Finck, N.; Radulescu, L.; Schild, D.

2016-01-01

Trivalent americium was adsorbed on magnetite and maghemite under similar chemical conditions and the local environment probed by EXAFS spectroscopy. In both samples, partially hydrated Am(III) binds the surface but slightly different surface complexes were identified. On Fe3O4, Am(III) forms...... monomeric tridentate surface complexes similar to that reported for Pu(III) at the (111) surface. In contrast, the lower number of detected Fe atoms may suggest that Am(III) forms monomeric bidentate surface complexes on γ-Fe2O3. Alternatively, the lower Fe coordination number can also be due...

Defect reduction of patterned media templates and disks

Science.gov (United States)

Luo, Kang; Ha, Steven; Fretwell, John; Ramos, Rick; Ye, Zhengmao; Schmid, Gerard; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2010-05-01

Imprint lithography has been shown to be an effective technique for the replication of nano-scale features. Acceptance of imprint lithography for manufacturing will require a demonstration of defect levels commensurate with cost-effective device production. This work summarizes the results of defect inspections of hard disks patterned using Jet and Flash Imprint Lithography (J-FILTM). Inspections were performed with optical based automated inspection tools. For the hard drive market, it is important to understand the defectivity of both the template and the imprinted disk. This work presents a methodology for automated pattern inspection and defect classification for imprint-patterned media. Candela CS20 and 6120 tools from KLA-Tencor map the optical properties of the disk surface, producing highresolution grayscale images of surface reflectivity and scattered light. Defects that have been identified in this manner are further characterized according to the morphology. The imprint process was tested after optimizing both the disk cleaning and adhesion layers processes that precede imprinting. An extended imprint run was performed and both the defect types and trends are reported.

Hydrophilic/hydrophobic surface modification impact on colloid lithography: Schottky-like defects, dislocation, and ideal distribution

Science.gov (United States)

Burtsev, Vasilii; Marchuk, Valentina; Kugaevskiy, Artem; Guselnikova, Olga; Elashnikov, Roman; Miliutina, Elena; Postnikov, Pavel; Svorcik, Vaclav; Lyutakov, Oleksiy

2018-03-01

Nano-spheres lithography is actually considered as a powerful tool to manufacture various periodic structures with a wide potential in the field of nano- and micro-fabrication. However, during self-assembling of colloid microspheres, various defects and mismatches can appear. In this work the size and quality of single-domains of closed-packed polystyrene (PS), grown up on thin Au layers modified by hydrophilic or hydrophobic functional groups via diazonium chemistry was studied. The effects of the surface modification on the quality and single-domain size of polystyrene (PS) microspheres array were investigated and discussed. Modified surfaces were characterized using the AFM and wettability tests. PS colloidal suspension was deposited using the drop evaporation method. Resulted PS microspheres array was characterized using the SEM, AFM and confocal microscopy technique.

Natural defects and defects created by ionic implantation in zinc tellurium

International Nuclear Information System (INIS)

Roche, J.P.; Dupuy, M.; Pfister, J.C.

1977-01-01

Various defects have been studied in ZnTe crystals by transmission electron microscope and by scanning electron microscope in cathodo-luminescence mode: grain boundaries, sub-grain boundaries, twins. Ionic implants of boron (100 keV - 2x10 14 and 10 15 ions cm -2 ) were made on these crystals followed by isochrone annealing (30 minutes) of zinc under partial pressure at 550, 650 and 750 0 C. The nature of the defects was determined by transmission electron microscope: these are interstitial loops (b=1/3 ) the size of which varies between 20 A (non-annealed sample) and 180A (annealed at 750 0 C). The transmission electron microscope was also used to make concentration profiles of defects depending on depth. It is found that for the same implant (2x10 14 ions.cm -2 ), the defect peak moves towards the exterior of the crystal as the annealing temperature rises (400 - 1000 and 7000 A for the three annealings). These results are explained from a model which allows for the coalescence of defects and considers the surface of the sample as being the principal source of vacancies. During the annealings, the migration of vacancies brings about the gradual annihilation of the implant defects. The adjustment of certain calculation parameters on the computer result in giving 2 eV as energy value for the formation of vacancies [fr

Interpretation of recovery stage III in gold. [Electron irradiation

Energy Technology Data Exchange (ETDEWEB)

Seeger, A.; Frank, W. (Max-Planck-Institut fuer Metallforschung, Stuttgart (Germany, F.R.). Inst. fuer Physik; Stuttgart Univ. (Germany, F.R.). Inst. fuer Theoretische und Angewandte Physik)

1983-05-01

The paper compares a recent investigation of Stage-III recovery on electron-irradiated gold by Sonnenberg and Dedek with earlier work on cold-worked or quenched gold. The experimental results of Sonnenberg and Dedek are found to be in excellent agreement with those of Schuele, Seeger, Schumacher, and King, who showed that in Au Stage III is due to the migration of an elementary intrinsic point defect with migration enthalpy Hsup(III) = (0.71 +- 0.02)eV. Since the monovacancy migration enthalpy Hsub(IVsup(M)) = (0.83 +- 0.02)eV obtained by Schuele et al. has been confirmed by other workers and independent techniques, it is concluded that Hsup(III) represents the migration enthalpy of isolated self-interstitials.

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

International Nuclear Information System (INIS)

Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

2015-01-01

We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J th ) of ∼3.5 kA/cm 2 , compared to the ITO VCSEL J th of 8 kA/cm 2 . The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

Energy Technology Data Exchange (ETDEWEB)

Leonard, J. T., E-mail: jtleona01@gmail.com; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2015-08-31

We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J{sub th}) of ∼3.5 kA/cm{sup 2}, compared to the ITO VCSEL J{sub th} of 8 kA/cm{sup 2}. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.

Enhanced healing of rabbit segmental radius defects with surface-coated calcium phosphate cement/bone morphogenetic protein-2 scaffolds

Energy Technology Data Exchange (ETDEWEB)

Wu, Yi; Hou, Juan; Yin, ManLi [Engineering Research Center for Biomedical Materials of Ministry of Education, East China University of Science and Technology, Shanghai 200237 (China); Wang, Jing, E-mail: biomatwj@163.com [Engineering Research Center for Biomedical Materials of Ministry of Education, East China University of Science and Technology, Shanghai 200237 (China); Liu, ChangSheng, E-mail: csliu@sh163.net [Engineering Research Center for Biomedical Materials of Ministry of Education, East China University of Science and Technology, Shanghai 200237 (China); The State Key Laboratory of Bioreactor Engineering, East China University of Science and Technology, Shanghai 200237 (China); Key Laboratory for Ultrafine Materials of Ministry of Education, East China University of Science and Technology, Shanghai 200237 (China)

2014-11-01

Large osseous defects remain a difficult clinical problem in orthopedic surgery owing to the limited effective therapeutic options, and bone morphogenetic protein-2 (BMP-2) is useful for its potent osteoinductive properties in bone regeneration. Here we build a strategy to achieve prolonged duration time and help inducting new bone formation by using water-soluble polymers as a protective film. In this study, calcium phosphate cement (CPC) scaffolds were prepared as the matrix and combined with sodium carboxymethyl cellulose (CMC-Na), hydroxypropylmethyl cellulose (HPMC), and polyvinyl alcohol (PVA) respectively to protect from the digestion of rhBMP-2. After being implanted in the mouse thigh muscles, the surface-modified composite scaffolds evidently induced ectopic bone formation. In addition, we further evaluated the in vivo effects of surface-modified scaffolds in a rabbit radius critical defect by radiography, three dimensional micro-computed tomographic (μCT) imaging, synchrotron radiation-based micro-computed tomographic (SRμCT) imaging, histological analysis, and biomechanical measurement. The HPMC-modified CPC scaffold was regarded as the best combination for segmental bone regeneration in rabbit radius. - Highlights: • A simple surface-coating method was used to fabricate composite scaffolds. • Growth factor was protected from rapid depletion via superficial coating. • Significant promotion of bone regeneration was achieved. • HPMC-modification displayed optimal effect of bone regeneration.

Surface Charge-Transfer Doping of Graphene Nanoflakes Containing Double-Vacancy (5-8-5) and Stone-Wales (55-77) Defects through Molecular Adsorption.

Science.gov (United States)

Shakourian-Fard, Mehdi; Jamshidi, Zahra; Kamath, Ganesh

2016-10-18

The adsorption of six electron donor-acceptor (D/A) organic molecules on various sizes of graphene nanoflakes (GNFs) containing two common defects, double-vacancy (5-8-5) and Stone-Wales (55-77), are investigated by means of ab initio DFT [M06-2X(-D3)/cc-pVDZ]. Different D/A molecules adsorb on a defect graphene (DG) surface with binding energies (ΔE b ) of about -12 to -28 kcal mol -1 . The ΔE b values for adsorption of molecules on the Stone-Wales GNF surface are higher than those on the double vacancy GNF surface. Moreover, binding energies increase by about 10 % with an increase in surface size. The nature of cooperative weak interactions is analyzed based on quantum theory of atoms in molecules, noncovalent interactions plot, and natural bond order analyses, and the dominant interaction is compared for different molecules. Electron density population analysis is used to explain the n- and p-type character of defect graphene nanoflakes (DGNFs) and also the change in electronic properties and reactivity parameters of DGNFs upon adsorption of different molecules and with increasing DGNF size. Results indicate that the HOMO-LUMO energy gap (E g ) of DGNFs decreases upon adsorption of molecules. However, by increasing the size of DGNFs, the E g and chemical hardness of all complexes decrease and the electrophilicity index increases. Furthermore, the values of the chemical potential of acceptor-DGNF complexes decrease with increasing size, whereas those of donor-DGNF complexes increase. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Immobilization of ionophore and surface characterization studies of the titanium(III) ion in a PVC-membrane sensor.

Science.gov (United States)

Rezayi, Majid; Heng, Lee Yook; Kassim, Anuar; Ahmadzadeh, Saeid; Abdollahi, Yadollah; Jahangirian, Hossein

2012-01-01

Novel ionophores comprising various hydroxide and amine structures were immobilized onto poly(vinyl chloride) (PVC) matrices, and these were examined to determine Ti(III) selectivity. To predict the selectivity of Ti(III), a PVC membrane was used to investigate the binding of Ti(III) to c-methylcalix[4]resorcinarene (CMCR). The study showed that the chelating ligand, CMCR, was coordinated selectively to Ti(III) at eight coordination sites involving the oxygen atoms at the interface of the membrane/solution. The membrane was prepared, based on CMCR as an ionophore, sodium tetrakis(4-fluorophenyl) borate (NaTFPB) as a lipophilic ionic additive, and dioctylphthalate (DOP) as a plasticizer. The immobilization of the ionophore and surface characterization studies revealed that the performance of CMCR-immobilized PVC was equivalent to that of mobile ionophores in supported liquid membranes (SLMs). The strengths of the ion-ionophore (CMCR-Ti(OH)(OH(2))(5) (2+)) interactions and the role of ionophores on membranes were studied via UV-Vis, Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM) and and X-ray diffraction (XRD).

Application of eddy current inversion technique to the sizing of defects in Inconel welds with rough surfaces

International Nuclear Information System (INIS)

Yusa, Noritaka; Machida, Eiji; Janousek, Ladislav; Rebican, Mihai; Chen, Zhenmao; Miya, Kenzo

2005-01-01

This paper evaluates the applicability of eddy current inversion techniques to the sizing of defects in Inconel welds with rough surfaces. For this purpose, a plate Inconel weld specimen, which models the welding of a stub tube in a boiling water nuclear reactor is fabricated, and artificial notches machined into the specimen. Eddy current inspections using six different eddy current probes are conducted and efficiencies were evaluated for the six probes for weld inspection. It is revealed that if suitable probes are applied, an Inconel weld does not cause large noise levels during eddy current inspections even though the surface of the weld is rough. Finally, reconstruction of the notches is performed using eddy current signals measured using the uniform eddy current probe that showed the best results among the six probes in this study. A simplified configuration is proposed in order to consider the complicated configuration of the welded specimen in numerical simulations. While reconstructed profiles of the notches are slightly larger than the true profiles, quite good agreements are obtained in spite of the simple approximation of the configuration, which reveals that eddy current testing would be an efficient non-destructive testing method for the sizing of defects in Inconel welds

The steam generator programme of PISC III

International Nuclear Information System (INIS)

Birac, C.; Herkenrath, H.

1990-12-01

The PISC III Actions are intended to extend the results and methodologies of the previous PISC excercises, i.e. the validation of the capabilities of the various examination techniques when used on real defects in real components under real conditions of inspection. Being aware of the important safety role that steam generator tubes play as barrier between primary and secondary cooling system and of the industrial problems that the degradation of these tubes can create, the PISC III Management Board agreed to include in the PISC III Programme a special Action on Steam Generator Tubes Testing (SGT). It was decided to organize the programme in three phases, including Round Robin Tests (RRT): - capability tests on loose tubes, - capability tests on transportable mock-ups, - reliability tests on fixed mock-ups including some interesting SURRY tubes

Effects of Titanium Mesh Surfaces-Coated with Hydroxyapatite/β-Tricalcium Phosphate Nanotubes on Acetabular Bone Defects in Rabbits

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Thuy-Duong Thi Nguyen

2017-07-01

Full Text Available The management of severe acetabular bone defects in revision reconstructive orthopedic surgery is challenging. In this study, cyclic precalcification (CP treatment was used on both nanotube-surface Ti-mesh and a bone graft substitute for the acetabular defect model, and its effects were assessed in vitro and in vivo. Nanotube-Ti mesh coated with hydroxyapatite/β-tricalcium phosphate (HA/β-TCP was manufactured by an anodizing and a sintering method, respectively. An 8 mm diameter defect was created on each acetabulum of eight rabbits, then treated by grafting materials and covered by Ti meshes. At four and eight weeks, postoperatively, biopsies were performed for histomorphometric analyses. The newly-formed bone layers under cyclic precalcified anodized Ti (CP-AT meshes were superior with regard to the mineralized area at both four and eight weeks, as compared with that under untreated Ti meshes. Active bone regeneration at 2–4 weeks was stronger than at 6–8 weeks, particularly with treated biphasic ceramic (p < 0.05. CP improved the bioactivity of Ti meshes and biphasic grafting materials. Moreover, the precalcified nanotubular Ti meshes could enhance early contact bone formation on the mesh and, therefore, may reduce the collapse of Ti meshes into the defect, increasing the sufficiency of acetabular reconstruction. Finally, cyclic precalcification did not affect bone regeneration by biphasic grafting materials in vivo.

Coenzyme Q10 defects may be associated with a deficiency of Q10-independent mitochondrial respiratory chain complexes

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Konstantina Fragaki

Full Text Available BACKGROUND: Coenzyme Q10 (CoQ10 or ubiquinone deficiency can be due either to mutations in genes involved in CoQ10 biosynthesis pathway, or to mutations in genes unrelated to CoQ10 biosynthesis. CoQ10 defect is the only oxidative phosphorylation disorder that can be clinically improved after oral CoQ10 supplementation. Thus, early diagnosis, first evoked by mitochondrial respiratory chain (MRC spectrophotometric analysis, then confirmed by direct measurement of CoQ10 levels, is of critical importance to prevent irreversible damage in organs such as the kidney and the central nervous system. It is widely reported that CoQ10 deficient patients present decreased quinone-dependent activities (segments I + III or G3P + III and II + III while MRC activities of complexes I, II, III, IV and V are normal. We previously suggested that CoQ10 defect may be associated with a deficiency of CoQ10-independent MRC complexes. The aim of this study was to verify this hypothesis in order to improve the diagnosis of this disease. RESULTS: To determine whether CoQ10 defect could be associated with MRC deficiency, we quantified CoQ10 by LC-MSMS in a cohort of 18 patients presenting CoQ10-dependent deficiency associated with MRC defect. We found decreased levels of CoQ10 in eight patients out of 18 (45 %, thus confirming CoQ10 disease. CONCLUSIONS: Our study shows that CoQ10 defect can be associated with MRC deficiency. This could be of major importance in clinical practice for the diagnosis of a disease that can be improved by CoQ10 supplementation.

Reduction in Defect Content of ODS Alloys

Energy Technology Data Exchange (ETDEWEB)

Ritherdon, J

2001-05-15

The work detailed within this report is a continuation of earlier work carried out under contract number 1DX-SY382V. The earlier work comprises a literature review of the sources and types of defects found principally in Fe-based ODS alloys as well as experimental work designed to identify defects in the prototype ODS-Fe{sub 3}Al alloy, deduce their origins and to recommend methods of defect reduction. The present work is an extension of the experimental work already reported and concentrates on means of reduction of defects already identified rather than the search for new defect types. This report also includes results gathered during powder separation trials, conducted by the University of Groningen, Netherlands and coordinated by the University of Liverpool, involving the separation of different metallic powders in terms of their differing densities. The scope and objectives of the present work were laid out in the technical proposal ''Reduction in Defect Content in ODS Alloys-III''. All the work proposed in the ''Statement of Work'' section of the technical proposal has been carried out and all work extra to the ''Statement of Work'' falls within the context of an ODS-Fe{sub 3}Al alloy of improved overall quality and potential creep performance in the consolidated form. The outturn of the experimental work performed is reported in the following sections.

Unusual case of failure to thrive: Type III Bartter syndrome.

Science.gov (United States)

Agrawal, S; Subedi, K; Ray, P; Rayamajhi, A

2016-09-01

Bartter syndrome Type III is a rare autosomal recessive disorder resulting from an inherited defect in the thick ascending limb of the loop of henle of the nephrons in kidney. The typical clinical manifestations in childhood are failure to thrive and recurrent episodes of vomiting. Typical laboratory findings which help in the diagnosis are hypokalemic metabolic alkalosis, hypomagnesemia and hypercalciuria. We report a case of Type III Bartter syndrome not responding to repeated conventional treatment of failure to thrive.

Congenital heart defects in oculodentodigital dysplasia: Report of two cases.

Science.gov (United States)

Izumi, Kosuke; Lippa, Andrew M; Wilkens, Alisha; Feret, Holly A; McDonald-McGinn, Donna M; Zackai, Elaine H

2013-12-01

Oculodentodigital dysplasia is caused by mutations in the GJA1 gene. Oculodentodigital dysplasia presents with a spectrum of clinical features including craniofacial, ocular, dental, and limb anomalies. Although recent findings implicate the major role of GJA1 during cardiac organogenesis, congenital heart defects are infrequently reported in oculodentodigital dysplasia. Here we report on two patients with GJA1 mutations presenting with cardiac malformations and type III syndactyly. Patient 1 presented with pulmonary atresia, an intact septum, right ventricular hypoplasia and tricuspid stenosis. The infant had a small nose, thin columella and bilateral 4-5 syndactyly of the fingers. A de novo c.226C>T (p.Arg76Cys) mutation was identified. Patient 2 presented at 6 months with a ventricular septal defect. The child had hypoplastic alae nasi with a thin columella and bilateral 4-5 syndactyly of the digits. A de novo missense mutation, c.145C>G (p.Gln49Glu) was found. Our two patients underscore the importance of cardiac evaluations as part of the initial workup for patients with findings of oculodentodigital dysplasia. Conversely, those patients with type III syndactyly and congenital heart defect should be screened for GJA1 mutations. © 2013 Wiley Periodicals, Inc.

Surface damage versus defect microstructures in He and H ion co-implanted Si{sub 3}N{sub 4}/Si

Energy Technology Data Exchange (ETDEWEB)

Zhu, F. [School of Science, Tianjin University, Tianjin 300072 (China); Liu, C.L., E-mail: liuchanglong@tju.edu.cn [School of Science, Tianjin University, Tianjin 300072 (China); Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics Faculty of Science, Tianjin 300072 (China); Gao, Y.J.; Wang, Z.; Wang, J. [School of Science, Tianjin University, Tianjin 300072 (China)

2012-09-01

Cz n-type Si (1 0 0) wafers with a top Si{sub 3}N{sub 4} layer of about 170 nm in thickness were sequentially implanted with 40 keV He ions at a fluence of 5 Multiplication-Sign 10{sup 16}/cm{sup 2} and 35 keV H ions at fluences of 1 Multiplication-Sign 10{sup 15}, 5 Multiplication-Sign 10{sup 15} and 1 Multiplication-Sign 10{sup 16}/cm{sup 2}, respectively. Creation and evolution of surface damage as well as micro-defects have been studied. Our results clearly show that production of surface damage depends strongly on both the H implant fluence and annealing temperature. Only blistering or localized exfoliation of the top Si{sub 3}N{sub 4} layer has been observed for post H implantation at fluences of 1 Multiplication-Sign 10{sup 15} and 5 Multiplication-Sign 10{sup 15}/cm{sup 2} upon 800 Degree-Sign C annealing. However, serious surface exfoliation has been found for the 1 Multiplication-Sign 10{sup 16}/cm{sup 2} H co-implanted samples after annealing at 450 Degree-Sign C and above. The exfoliation occurs at a depth of about 360 nm from the surface, which is obviously larger than the He or H ion range. Moreover, the exfoliated craters show clear two-step structures. Cross-sectional transmission electron microscopy (XTEM) observations reveal formation of micro-cracks in Si bulk and along the original interface, which is mainly responsible for the observed surface phenomena. The formation mechanism of micro-cracks has been discussed in combination of He and H implant-induced defects, impurities as well as their interactions upon annealing.

Scanning tip measurement for identification of point defects

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Raineri Vito

2011-01-01

Full Text Available Abstract Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS were used to measure the electrical properties of Au/silicon Schottky junctions. Spreading resistance and scanning probe capacitance microscopy (SCM were applied to measure local electrical properties. Using a preamplifier the sensitivity of DLTS was increased satisfactorily to measure transients of the scanning tip semiconductor junction. In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth. These defects deteriorated the Schottky junction characteristic. Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface. The defect transients in this area were measured both in macroscopic Schottky junctions and by scanning tip DLTS and were detected by bias modulation frequency dependence in SCM.

Absorption and atom mobility in electric field: point defect role in glasses

International Nuclear Information System (INIS)

Serruys, Y.; Vigouroux, J.P.

1986-10-01

During the surface analysis of dielectric materials, the impinging ionising particles induce point defects localised in the band gap and build an electrical charge. The electric field created by the charged defects modifies the physico-chemical properties of surface and bulk. We show that the fundamental study of defects allows a better understanding of technological phenomena such as dielectric breakdown, fracture and diffusion [fr

Early Umbilical Cord Blood-Derived Stem Cell Transplantation Does Not Prevent Neurological Deterioration in Mucopolysaccharidosis Type III

NARCIS (Netherlands)

Welling, Lindsey; Marchal, Jan Pieter; van Hasselt, Peter; van der Ploeg, Ans T; Wijburg, Frits A; Boelens, Jaap Jan

2015-01-01

Mucopolysaccharidosis type III (MPS III), or Sanfilippo disease, is a neurodegenerative lysosomal storage disease (LSD) caused by defective lysosomal degradation of heparan sulfate (HS). No effective disease-modifying therapy is yet available. In contrast to some other neuronopathic LSDs, bone

Altering graphene line defect properties using chemistry

Science.gov (United States)

Vasudevan, Smitha; White, Carter; Gunlycke, Daniel

2012-02-01

First-principles calculations are presented of a fundamental topological line defect in graphene that was observed and reported in Nature Nanotech. 5, 326 (2010). These calculations show that atoms and smaller molecules can bind covalently to the surface in the vicinity of the graphene line defect. It is also shown that the chemistry at the line defect has a strong effect on its electronic and magnetic properties, e.g. the ferromagnetically aligned moments along the line defect can be quenched by some adsorbates. The strong effect of the adsorbates on the line defect properties can be understood by examining how these adsorbates affect the boundary-localized states in the vicinity of the Fermi level. We also expect that the line defect chemistry will significantly affect the scattering properties of incident low-energy particles approaching it from graphene.

Modeling of 3-dimensional defects in integrated circuits

NARCIS (Netherlands)

Pineda de Gyvez, J.; Dani, S.M.

1992-01-01

Although the majority of defects found in manufacturing lines have predominantly 2-Dimensional effects, there are many situations in which 2D defect models do not suffice, e.g. tall layer bulks disrupting the continuity of subsequent layers, abrupt surface topologies, extraneous materials embedded

Investigations on in situ diagnostics by an infrared camera to distinguish between the plasma facing tiles with carbonaceous surface layer and defect in the underneath junction

International Nuclear Information System (INIS)

Cai, Laizhong; Gauthier, Eric; Corre, Yann; Liu, Jian

2013-01-01

Both a deposition surface layer and a delamination underneath junction existing on plasma facing components (PFCs) can result in abnormal high surface temperature under normal heating conditions. The tile with delamination has to be replaced to prevent from a critical failure (complete delamination) during plasma operation while the carbon deposit can be removed without any repairing. Therefore, distinguishing in situ deposited tiles and junction defect tiles is crucial to avoid the critical failure without unwanted shutdown. In this paper, the thermal behaviors of junction defect tiles and carbon deposit tiles are simulated numerically. A modified time constant method is then introduced to analyze the thermal behaviors of deposited tiles and junction defect tiles. The feasibility of discrimination by analyzing the thermal behaviors of tiles is discussed and the requirements of this method for discrimination are described. Finally, the time resolution requirement of IR cameras to do the discrimination is mentioned

Syndromes, Disorders and Maternal Risk Factors Associated with Neural Tube Defects (III

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Chih-Ping Chen

2008-06-01

Full Text Available Fetuses with neural tube defects (NTDs may be associated with syndromes, disorders, and maternal and fetal risk factors. This article provides a comprehensive review of syndromes, disorders, and maternal and fetal risk factors associated with NTDs, such as omphalocele, OEIS (omphalocele-exstrophy-imperforate anus-spinal defects complex, pentalogy of Cantrell, amniotic band sequence, limb-body wall complex, Meckel syndrome, Joubert syndrome, skeletal dysplasia, diabetic embryopathy, and single nucleotide polymorphisms in genes of glucose metabolism. NTDs associated with syndromes, disorders, and maternal and fetal risk factors are a rare but important cause of NTDs. The recurrence risk and the preventive effect of maternal folic acid intake in NTDs associated with syndromes, disorders and maternal risk factors may be different from those of nonsyndromic multi facto rial NTDs. Perinatal identification of NTDs should alert the clinician to the syndromes, disorders, and maternal and fetal risk factors associated with NTDs, and prompt a thorough etiologic investigation and genetic counseling. [Taiwan J Obstet Cynecol 2008;47(2:131-140

Additive manufacturing for in situ repair of osteochondral defects

International Nuclear Information System (INIS)

Cohen, Daniel L; Lipton, Jeffrey I; Bonassar, Lawrence J; Lipson, Hod

2010-01-01

Tissue engineering holds great promise for injury repair and replacement of defective body parts. While a number of techniques exist for creating living biological constructs in vitro, none have been demonstrated for in situ repair. Using novel geometric feedback-based approaches and through development of appropriate printing-material combinations, we demonstrate the in situ repair of both chondral and osteochondral defects that mimic naturally occurring pathologies. A calf femur was mounted in a custom jig and held within a robocasting-based additive manufacturing (AM) system. Two defects were induced: one a cartilage-only representation of a grade IV chondral lesion and the other a two-material bone and cartilage fracture of the femoral condyle. Alginate hydrogel was used for the repair of cartilage; a novel formulation of demineralized bone matrix was used for bone repair. Repair prints for both defects had mean surface errors less than 0.1 mm. For the chondral defect, 42.8 ± 2.6% of the surface points had errors that were within a clinically acceptable error range; however, with 1 mm path planning shift, an estimated ∼75% of surface points could likely fall within the benchmark envelope. For the osteochondral defect, 83.6 ± 2.7% of surface points had errors that were within clinically acceptable limits. In addition to implications for minimally invasive AM-based clinical treatments, these proof-of-concept prints are some of the only in situ demonstrations to-date, wherein the substrate geometry was unknown a priori. The work presented herein demonstrates in situ AM, suggests potential biomedical applications and also explores in situ-specific issues, including geometric feedback, material selection and novel path planning techniques.

Automated Diagnosis and Classification of Steam Generator Tube Defects

International Nuclear Information System (INIS)

Garcia, Gabe V.

2004-01-01

A major cause of failure in nuclear steam generators is tube degradation. Tube defects are divided into seven categories, one of which is intergranular attack/stress corrosion cracking (IGA/SCC). Defects of this type usually begin on the outer surface of the tubes and propagate both inward and laterally. In many cases these defects occur at or near the tube support plates. Several different methods exist for the nondestructive evaluation of nuclear steam generator tubes for defect characterization

Efficiency of defect specific maintenance od steam generator tubes: the case of ODSCC

International Nuclear Information System (INIS)

Cizelj, L.; Dvorsek, T.

1996-01-01

The outside diameter stress corrosion cracking at tube support plates became the dominating ageing mechanism in steam generators tubes made of Inconel 600. A variety of maintenance approaches were developed and implemented worldwide to deal with this mechanism. Despite different philosophical and physical backgrounds implemented, all of the applied approaches satisfy the relevant regulatory requirements. For our purpose, the maintenance approach consist of: (1) inspection of tubes, (2) accepting or rejecting the defective tube and (3) plugging of rejected tubes. The problem of selecting an optimal maintenance approach is raised in the paper. Consequently, a method comparing the efficiency of applicable maintenance approaches is proposed. The efficiency is defined by three parameters: (a) number of plugged tubes, (b) probability of steam generator tube rupture and (c) predicted accidental leak rates through the defects. An original probabilistic model is proposed to quantify the probability of tube rupture, while procedures available in literature were used to define the accidental leak rates. The numerical example considers the data from Krsko NPP (Westinghouse 632 MWe). The maintenance approaches analyzed include: (i) no repair at all, (ii) traditional defect depth (40%) based maintenance, (iii) alternate plugging criterion (bobbin coil voltage as defined by EPRI and U.S. NRC) and (iv) combined traditional and alternate approach. Advantages of the defect specific approaches (iii) and (iv) over the traditional one (defect depth) are clearly shown. A brief discussion on the optimization of safe life of steam generator is given. (author)

Infrared studies of defects formed during postirradiation anneals of Czochralski silicon

Science.gov (United States)

Londos, C. A.; Sarlis, N. V.; Fytros, L. G.

1998-10-01

This article reports on defect studies of neutron-irradiated Czochralski-grown silicon (Cz-Si) material by means of infrared spectroscopy. In particular, the investigation was focused on the evolution of the 828 cm-1 well-known band of A-center, due to isochronal anneals from room temperature (RT) up to ≈700 °C. The strength of the VO band begins to increase above ≈200 gradually up to 300 °C (stage I); then, it begins to decrease up to ≈400 °C (stage II), where upon it stabilizes up to ≈550 °C (stage III). Upon re-irradiation under exactly the same conditions and repeating the annealing process, the increase of the VO signal in stage I disappears. The phenomenon is ascribed to the existence of defect aggregates labeled as Xi centers which are correlated with (impurity-defect) clusters that compete with Oi in capturing vacancies. The presence of Xi centers is related to the thermal annealings performed. Comparison of the evolution of VO (828 cm-1) and VO2 (887 cm-1) bands between irradiated and re-irradiated materials, during stage II, is made and the results are discussed in the framework of established reaction patterns. The stabilization of the amplitude of the 828 cm-1 line in stage III is examined. The prevailing aspect is that a portion of A-centers in neutron-irradiated Si acquires larger thermal stability by relaxing in the vicinity of larger defects.

A study on the healing process of bone defect-examination of healing stages of bone defect in the irradiated mandibular rim by microradiography and autoradiography

International Nuclear Information System (INIS)

Shimoyama, Tetsuo

1980-01-01

The mandibular rim of 150 female Donryu strain rats was exposed to 2000 rads (B group) or to 3000 rads (C group), and a bone defect of 1 x 1 x 2 mm in size was formed in the madibular rim. Cure process of this bone defect was observed periodically by microradiography and autoradiography using 45 Ca as a tracer, compared with that in the control group (A group, non-irradiated). Irradiated rats having bone defects recovered smoothly. Microradiographic findings of the A group showed that new bone was formed on the surface of the perosteum of the mandible on the 7th days after the irradiation. Bone defects in all rats were repaired completely by the 49th days after the irradiation. Microradiographic findings of the B and C groups showed that new bone was formed on the tongue side surface of the periosteum of the mandible in the early stage after the irradiation. However, after that, osteogenesis became slower, and the edge of bone defects or a part of the mandible became smaller. Bone defects were not repaired and became larger. These findings were more marked in the C group than in the B group. Autoradiographic findings showed marked uptake of 45 Ca into new bone in the A group. Rats of which bone defects were repaired showed the uptake of 45 Ca in accordance with the shape of the mandibular rim. The edge of bone defect of the B and C groups where new bone was not formed was destroyed since the 14th day after the irradiation. There were some cases in which the uptake of 45 Ca into the surface of the periosteum of the mandible near bone defect was observed even when bone defect was enlarged. (Tsunoda, M.)

Estimates of point defect production in α-quartz using molecular dynamics simulations

Science.gov (United States)

Cowen, Benjamin J.; El-Genk, Mohamed S.

2017-07-01

Molecular dynamics (MD) simulations are performed to investigate the production of point defects in α-quartz by oxygen and silicon primary knock-on atoms (PKAs) of 0.25-2 keV. The Wigner-Seitz (WS) defect analysis is used to identify the produced vacancies, interstitials, and antisites, and the coordination defect analysis is used to identify the under and over-coordinated oxygen and silicon atoms. The defects at the end of the ballistic phase and the residual defects, after annealing, increase with increased PKA energy, and are statistically the same for the oxygen and silicon PKAs. The WS defect analysis results show that the numbers of the oxygen vacancies and interstitials (VO, Oi) at the end of the ballistic phase is the highest, followed closely by those of the silicon vacancies and interstitials (VSi, Sii). The number of the residual oxygen and silicon vacancies and interstitials are statistically the same. In addition, the under-coordinated OI and SiIII, which are the primary defects during the ballistic phase, have high annealing efficiencies (>89%). The over-coordinated defects of OIII and SiV, which are not nearly as abundant in the ballistic phase, have much lower annealing efficiencies (PKA energy.

Defect detectability of eddy current testing for underwater laser beam welding

International Nuclear Information System (INIS)

Ueno, Souichi; Kobayashi, Noriyasu; Ochiai, Makoto; Kasuya, Takashi; Yuguchi, Yasuhiro

2011-01-01

We clarified defect detectability of eddy current testing (ECT) as a surface inspection technique for underwater laser beam welding works of dissimilar metal welding (DMW) of reactor vessel nozzle. The underwater laser beam welding procedure includes groove caving as a preparation, laser beam welding in the grooves and welded surface grinding as a post treatment. Therefore groove and welded surface inspections are required in the underwater condition. The ECT is a major candidate as this inspection technique because a penetrant testing is difficult to perform in the underwater condition. Several kinds of experiments were curried out using a cross coil an ECT probe and ECT data acquisition system in order to demonstrate the ECT defect detectability. We used specimens, simulating groove and DMW materials at an RV nozzle, with electro-discharge machining (EDM) slits over it. Additionally, we performed a detection test for artificial stress corrosion cracking (SCC) defects. From these experimental results, we confirmed that an ECT was possible to detect EDM slits 0.3 mm or more in depth and artificial SCC defects 0.02 mm to 0.48 mm in depth on machined surface. Furthermore, the underwater ECT defect detectability is equivalent to that in air. We clarified an ECT is sufficiently usable as a surface inspection technique for underwater laser beam welding works. (author)

III-Nitride Membranes for Thermal Bio-Sensing and Solar Hydrogen Generation

KAUST Repository

Elafandy, Rami Tarek Mahmoud

2017-09-01

III-nitride nanostructures have generated tremendous scientific and technological interests in studying and engineering their low dimensional physics phenomena. Among these, 2D planar, free standing III-nitride nanomembranes are unrivalled in their scalability for high yield manufacture and can be mechanically manipulated. Due to the increase in their surface to volume ratio and the manifestation of quantum phenomena, these nanomembranes acquire unique physical properties. Furthermore, III-nitride membranes are chemically stable and biocompatible. Finally, nanomembranes are highly flexible and can follow curvilinear surfaces present in biological systems. However, being free-standing, requires especially new techniques for handling nanometers or micrometers thick membrane devices. Furthermore, effectively transferring these membrane devices to other substrates is not a direct process which requires the use of photoresists, solvents and/or elastomers. Finally, as the membranes are transferred, they need to be properly attached for subsequent device fabrications, which often includes spin coating and rinsing steps. These engineering complications have impeded the development of novel devices based on III-nitride membranes. In this thesis, we demonstrate the versatility of III-nitride membranes where we develop a thermal bio-sensor nanomembrane and solar energy photo-anode membrane. First, we present a novel preparation technique of nanomembranes with new characteristics; having no threading dislocation cores. We then perform optical characterization to reveal changes in their defect densities compared to the bulk crystal. We also study their mechanical properties where we successfully modulate their bandgap emission by 55 meV through various external compressive and tensile strain fields. Furthermore, we characterize the effect of phonon-boundary scattering on their thermal properties where we report a reduction of thermal conductivity from 130 to 9 W/mK. We employ

Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Science.gov (United States)

Deng, Gaoqiang; Zhang, Yuantao; Yu, Ye; Yan, Long; Li, Pengchong; Han, Xu; Chen, Liang; Zhao, Degang; Du, Guotong

2018-04-01

In this paper, N-polar GaN films with different V/III ratios were grown on vicinal C-face SiC substrates by metalorganic chemical vapor deposition. During the growth of N-polar GaN film, the V/III ratio was controlled by adjusting the molar flow rate of ammonia while keeping the trimethylgallium flow rate unchanged. The influence of the V/III ratio on the surface morphology of N-polar GaN film has been studied. We find that the surface root mean square roughness of N-polar GaN film over an area of 20 × 20 μm2 can be reduced from 8.13 to 2.78 nm by optimization of the V/III ratio. Then, using the same growth conditions, N-polar InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) were grown on the rough and the smooth N-polar GaN templates, respectively. Compared with the LED grown on the rough N-polar GaN template, dramatically improved interface sharpness and luminescence uniformity of the InGaN/GaN MQWs are achieved for the LED grown on the smooth N-polar GaN template.

Calculating the optical properties of defects and surfaces in wide band gap materials

Science.gov (United States)

Deák, Peter

2018-04-01

The optical properties of a material critically depend on its defects, and understanding that requires substantial and accurate input from theory. This paper describes recent developments in the electronic structure theory of defects in wide band gap materials, where the standard local or semi-local approximations of density functional theory fail. The success of the HSE06 screened hybrid functional is analyzed in case of Group-IV semiconductors and TiO2, and shown that it is the consequence of error compensation between semi-local and non-local exchange, resulting in a proper derivative discontinuity (reproduction of the band gap) and a total energy which is a linear function of the fractional occupation numbers (removing most of the electron self-interaction). This allows the calculation of electronic transitions with accuracy unseen before, as demonstrated on the single-photon emitter NV(-) center in diamond and on polaronic states in TiO2. Having a reliable tool for electronic structure calculations, theory can contribute to the understanding of complicated cases of light-matter interaction. Two examples are considered here: surface termination effects on the blinking and bleaching of the light-emission of the NV(-) center in diamond, and on the efficiency of photocatalytic water-splitting by TiO2. Finally, an outlook is presented for the application of hybrid functionals in other materials, as, e.g., ZnO, Ga2O3 or CuGaS2.

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

KAUST Repository

Leonard, J. T.

2016-03-01

We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

KAUST Repository

Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Shen, Chao; Margalith, T.; Ng, Tien Khee; Denbaars, S. P.; Ooi, Boon S.; Speck, J. S.; Nakamura, S.

2016-01-01

We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

Effect of He+ fluence on surface morphology and ion-irradiation induced defect evolution in 7075 aluminum alloys

Science.gov (United States)

Ni, Kai; Ma, Qian; Wan, Hao; Yang, Bin; Ge, Junjie; Zhang, Lingyu; Si, Naichao

2018-02-01

The evolution of microstructure for 7075 aluminum alloys with 50 Kev helium ions irradiation were studied by using optical microscopy (OM), scanning electron microscopy (SEM), x-ray diffraction (XRD) and transmission electron microscopy (TEM). The fluences of 1 × 1015, 1 × 1016 and 1 × 1017 ions cm-2 were selected, and irradiation experiments were conducted at room temperatures. The transmission process of He+ ions was simulated by using SRIM software, including distribution of ion ranges, energy losses and atomic displacements. Experimental results show that irradiated pits and micro-cracks were observed on irradiation sample surface, and the size of constituent particles (not including Mg2Si) decreased with the increasing dose. The x-ray diffraction results of the pair of peaks is better resolved in irradiated samples might indicate that the stressed structure consequence due to crystal defects (vacancies and interstitials) after He+ implantation. TEM observation indicated that the density of MgZn2 phase was significantly reduced after helium ion irradiation which is harmful to strength. Besides, the development of compressive stress produced a large amount of dislocation defects in the 1015 ions cm-2 sample. Moreover, higher fluence irradiation produced more dislocations in sample. At fluence of 1016 ions cm-2, dislocation wall formed by dislocation slip and aggregation in the interior of grains, leading to the refinement of these grains. As fluence increased to 1017 ions cm-2, dislocation loops were observed in pinned dislocation. Moreover, dislocation as effective defect sink, irradiation-induced vacancy defects aggregated to these sinks, and resulted in the formation of helium bubbles in dislocation.

Positron annihilation spectroscopy in defects of semiconductors

International Nuclear Information System (INIS)

Fujinami, Masanori

2002-01-01

Interaction of positron and defects, application to research of defects of semiconductor and defects on the surface of semiconductor are explained. Cz (Czochralski)-Si single crystal with 10 18 cm -3 impurity oxygen was introduced defects by electron irradiation and the positron lifetime was measured at 90K after annealing. The defect size and recovery temperature were determined by the lifetime measurement. The distribution of defects in the depth direction is shown by S-E curve. The chemical state analysis is possible by CBS (Coincidence Doppler Broadening) spectra. The application to silicon-implanted (100 keV, 2x10 15 cm -2 ) silicon and oxygen-implanted (180 keV, 2x10 15 cm -2 ) silicon are stated. On the oxygen-implanted silicon, the main product was V2 after implantation, V 6 O 2 at 600degC and V 10 O 6 at 800degC. (S.Y.)

Ambient-temperature diffusion and gettering of Pt atoms in GaN with surface defect region under 60Co gamma or MeV electron irradiation

Science.gov (United States)

Hou, Ruixiang; Li, Lei; Fang, Xin; Xie, Ziang; Li, Shuti; Song, Weidong; Huang, Rong; Zhang, Jicai; Huang, Zengli; Li, Qiangjie; Xu, Wanjing; Fu, Engang; Qin, G. G.

2018-01-01

Generally, the diffusion and gettering of impurities in GaN needs high temperature. Calculated with the ambient-temperature extrapolation value of the high temperature diffusivity of Pt atoms in GaN reported in literature, the time required for Pt atoms diffusing 1 nm in GaN at ambient temperature is about 19 years. Therefore, the ambient-temperature diffusion and gettering of Pt atoms in GaN can hardly be observed. In this work, the ambient-temperature diffusion and gettering of Pt atoms in GaN is reported for the first time. It is demonstrated by use of secondary ion mass spectroscopy that in the condition of introducing a defect region on the GaN film surface by plasma, and subsequently, irradiated by 60Co gamma-ray or 3 MeV electrons, the ambient-temperature diffusion and gettering of Pt atoms in GaN can be detected. It is more obvious with larger irradiation dose and higher plasma power. With a similar surface defect region, the ambient-temperature diffusion and gettering of Pt atoms in GaN stimulated by 3 MeV electron irradiation is more marked than that stimulated by gamma irradiation. The physical mechanism of ambient-temperature diffusion and gettering of Pt atoms in a GaN film with a surface defect region stimulated by gamma or MeV electron irradiation is discussed.

Amino acids interacting with defected carbon nanotubes: ab initio calculations

Directory of Open Access Journals (Sweden)

M. Darvish Ganji

2016-09-01

Full Text Available The adsorption of a number of amino acids on a defected single-walled carbon nanotube (SWCNT is investigated by using the density-functional theory (DFT calculations. The adsorption energies and equilibrium distances are calculated for various configurations such as amino acid attaching to defect sites heptagon, pentagon and hexagon in defective tube and also for several molecular orientations with respect to the nanotube surface. The results showed that amino acids prefer to be physisorbed on the outer surface of the defected nanotube with different interaction strength following the hierarchy histidine > glycine > phenylalanine > cysteine. Comparing these findings with those obtained for perfect SWCNTs reveals that the adsorption energy of the amino acids increase for adsorption onto defected CNTs. The adsorption nature has also been evaluated by means of electronics structures analysis within the Mulliken population and DOS spectra for the interacting entities.

Automated defect location and sizing by advanced ultrasonic techniques

International Nuclear Information System (INIS)

Murgatroyd, R.A.

1983-01-01

From this assessment of advanced automated defect location and sizing techniques it is concluded that, 1. Pulse-echo techniques, when used at high sensitivity, are capable of detecting all known defects in the test weldments inspected; 2. Search sensitivity has a marked influence on defect detection at both 1 and 2 MHz, and it is considered that 20% DAC is the highest amplitude threshold level which could be prudently adopted at the search stage; 3. The important through-thickness dimension of deeply buried defects in the height range 5 to 50mm can be sized to an estimated accuracy of +2mm using the Silk technique and that applying a SAFT-type algorithm to the data gives good lateral positioning of defects; 4. The 70 0 longitudinal wave twin-crystal technique has proved to be a highly effective method of detecting underclad cracks. A 70 0 shear wave, pulse-echo technique and a 0 0 longitudinal wave twin crystal method also give good detection results in the near surface region; 5. The Silk technique has been effective in sizing defects in the height range 5 to 35mm in the near-surface region

Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides

KAUST Repository

Mumthaz Muhammed, Mufasila

2018-01-01

performance due to dislocation defects, remains an obstacle to their further improvement. In this dissertation, I present a significant enhancement of III-nitride devices based on emerging materials. A promising substrate, (-201)-oriented β-Ga2O3 with unique

Coupling of carbon monoxide molecules over oxygen-defected UO2(111) single crystal and thin film surfaces.

Science.gov (United States)

Senanayake, S D; Waterhouse, G I N; Idriss, H; Madey, Theodore E

2005-11-22

While coupling reactions of carbon-containing compounds are numerous in organometallic chemistry, they are very rare on well-defined solid surfaces. In this work we show that the reductive coupling of two molecules of carbon monoxide to C2 compounds (acetylene and ethylene) could be achieved on oxygen-defected UO2(111) single crystal and thin film surfaces. This result allows in situ electron spectroscopic investigation of a typical organometallic reaction such as carbon coupling and extends it to heterogeneous catalysis and solids. By using high-resolution photoelectron spectroscopy (HRXPS) it was possible to track the changes in surface states of the U and O atoms as well as identify the intermediate of the reaction. Upon CO adsorption U cations in low oxidation states are oxidized to U4+ ions; this was accompanied by an increase of the O-to-U surface ratios. The HRXPS C 1s lines show the presence of adsorbed species assigned to diolate species (-OCH=CHO-) that are most likely the reaction intermediate in the coupling of two CO molecules to acetylene and ethylene.

Coupling of Carbon Monoxide Molecules over Oxygen Defected UO2 (111) Single Crystal and Thin Film Surfaces

International Nuclear Information System (INIS)

Senanayake, S.; Waterhouse, G.; Idriss, H.; Madey, T.

2005-01-01

While coupling reactions of carbon-containing compounds are numerous in organometallic chemistry, they are very rare on well-defined solid surfaces. In this work we show that the reductive coupling of two molecules of carbon monoxide to C 2 compounds (acetylene and ethylene) could be achieved on oxygen-defected UO 2 (111) single crystal and thin film surfaces. This result allows in situ electron spectroscopic investigation of a typical organometallic reaction such as carbon coupling and extends it to heterogeneous catalysis and solids. By using high-resolution photoelectron spectroscopy (HRXPS) it was possible to track the changes in surface states of the U and O atoms as well as identify the intermediate of the reaction. Upon CO adsorption U cations in low oxidation states are oxidized to U 4+ ions; this was accompanied by an increase of the O-to-U surface ratios. The HRXPS C 1s lines show the presence of adsorbed species assigned to diolate species (-OCH=CHO-) that are most likely the reaction intermediate in the coupling of two CO molecules to acetylene and ethylene

Calculations of the optical properties for FA1:Ag+ centers and CN interactions at the regular and defect sites of the LiI (0 0 1) surface: First principle calculations

International Nuclear Information System (INIS)

Abdel Aal, S.

2007-01-01

The optical properties of the F A1 :Ag + color centers and CN interactions at the flat, edge and corner surfaces of LiI (0 0 1) were investigated by using quantum mechanical configuration interaction singles (CIS) and density functional theory (DFT) ab initio methods. Clusters of variable sizes were embedded in the simulated Coulomb fields that closely approximate the Madelung fields of the host surfaces, and the nearest-neighbor ions to the defect site were allowed to relax to equilibrium in order to calculate the optical properties. The sensitivity of the calculated transition energies (Stokes shifts) of F A1 :Ag + centers as well as related optical properties such as optical-optical conversion efficiency, relaxed excited states of the defect-containing surface, orientational destruction of the point defect, recording sensitivity, and the Glasner-Tompkins empirical rule, to the coordination number of the surface ion and artificial polarization were examined. The dependance of the adsorption energies of CN at LiI (0 0 1) surface, the coadsorption of CN, and the charge transfer reactions between CN and the paramagnetic iodine vacancy on the coordination number and artificial polarization effects were also clarified

Light-emitting diode assessment of dentinal defects: the role of presumed extraction forces

Directory of Open Access Journals (Sweden)

Marcelo Santos Coelho

2017-07-01

Full Text Available Objectives The evaluation of iatrogenic dentinal defects in extracted teeth may be influenced by extraction forces and prolonged dry times. The purpose of this study was to compare the presence of dentinal defects in freshly extracted, periodontally compromised teeth with those in a group of teeth with uncontrolled extraction forces and storage time. Materials and Methods The experimental group consisted of eighteen roots obtained from teeth extracted due to periodontal reasons with class II or III mobility. They were kept in saline and sectioned within 1 hour following extraction. The control group consisted of matched root types obtained from an anonymous tooth collection, consistent with previous dentinal defect studies. The slices were obtained at 3, 6, and 9 mm from the apex. The imaging process exposed all specimens to no more than 60 seconds of dry time. The × 12.8 magnification was used for the 9 mm slices and × 19.2 magnification for the 3 mm and 6 mm slices under light-emitting diode (LED transillumination. The root canal spaces and periodontal tissues were masked to minimize extraneous factors that might influence the evaluators. Chi-square test was used for statistical analysis. Results Dentinal defects were detected in 17% of the experimental group teeth, compared to 61% of control teeth (p = 0.015. Conclusions LED transillumination assessment of freshly extracted roots with class II or III mobility showed smaller number of dentinal defects than roots with uncontrolled storage time and extraction forces. The use of freshly extracted roots with mobility should be considered for future dental defect assessment studies.

First-principles study of native defects in bulk Sm2CuO4 and its (001) surface structure

Science.gov (United States)

Zheng, Fubao; Zhang, Qinfang; Meng, Qiangqiang; Wang, Baolin; Song, Fengqi; Yunoki, Seiji; Wang, Guanghou

2018-04-01

Using the first-principles calculations based on the density functional theory, we have studied the bulk defect formation and surface structures of Sm2CuO4. To ensure the accuracy of calculations, the spin order of Cu atoms is rechecked and it is the well-known nearest-neighbor antiferromagnetic ground state, which can be attributed to the hole-mediated superexchange through the strong pdσ hybridization interaction between Cu dx2-y2 electron and the neighboring oxygen px (or py) electron. Under each present experimental condition, the Sm vacancy has a very high formation energy and is unlikely to be stable. The Cu vacancy is a shallow acceptor, which is preferred under O-rich conditions, whereas the O vacancy is a donor and energetically favorable under O-poor conditions. To construct its (001) surface structure, CuOO, CuO, and Cu terminated surfaces are found to be most favorable under different experimental conditions. The stable surface structures are always accompanied by significant surface atomic reconstructions and electron charge redistribution, which are intimately correlated to each other.

In situ probing of the evolution of irradiation-induced defects in copper

International Nuclear Information System (INIS)

Li, N.; Hattar, K.; Misra, A.

2013-01-01

Through in situ Cu 3+ ion irradiation at room temperature in a transmission electron microscope (TEM), we have investigated the evolution of defect clusters as a function of the radiation dose at different distances from the 3 {1 1 2} incoherent twin boundary (ITB) in Cu. Post in situ ion irradiation, high resolution TEM was used to explore the types of defects, which are composed of a high-density of vacancy stacking fault tetrahedra (SFT) and sparsely distributed interstitial Frank loops. During irradiation, defect clusters evolve through four stages: (i) incubation, (ii) non-interaction, (iii) interaction and (iv) saturation; and the corresponding density was observed to initially increase with irradiation dose and then approach saturation. No obvious denuded zone is observed along the 3 {1 1 2} ITB and the configuration of defects at the boundary displays as truncated SFTs. Several defect evolution models have been proposed to explain the observed phenomena

A laser optical method for detecting corn kernel defects

Energy Technology Data Exchange (ETDEWEB)

Gunasekaran, S.; Paulsen, M. R.; Shove, G. C.

1984-01-01

An opto-electronic instrument was developed to examine individual corn kernels and detect various kernel defects according to reflectance differences. A low power helium-neon (He-Ne) laser (632.8 nm, red light) was used as the light source in the instrument. Reflectance from good and defective parts of corn kernel surfaces differed by approximately 40%. Broken, chipped, and starch-cracked kernels were detected with nearly 100% accuracy; while surface-split kernels were detected with about 80% accuracy. (author)

Curvature-induced defect unbinding and dynamics in active nematic toroids

Science.gov (United States)

Ellis, Perry W.; Pearce, Daniel J. G.; Chang, Ya-Wen; Goldsztein, Guillermo; Giomi, Luca; Fernandez-Nieves, Alberto

2018-01-01

Nematic order on curved surfaces is often disrupted by the presence of topological defects, which are singular regions in which the orientational order is undefined. In the presence of force-generating active materials, these defects are able to migrate through space like swimming microorganisms. We use toroidal surfaces to show that despite their highly chaotic and non-equilibrium dynamics, pairs of defects unbind and segregate in regions of opposite Gaussian curvature. Using numerical simulations, we find that the degree of defect unbinding can be controlled by tuning the system activity, and even suppressed in strongly active systems. Furthermore, by using the defects as active microrheological tracers and quantitatively comparing our experimental and theoretical results, we are able to determine material properties of the active nematic. Our results illustrate how topology and geometry can be used to control the behaviour of active materials, and introduce a new avenue for the quantitative mechanical characterization of active fluids.

The stability boundary of group-III transition metal diboride ScB 2 (0 0 0 1) surfaces

Science.gov (United States)

Zhao, Hui; Qin, Na

2012-01-01

Experimental observations and theoretical investigations exhibit that a group-IV(V) transition metal diboride (0 0 0 1) surface is terminated with a 1 × 1 TM(B) layer. As to a group-III transition metal diboride, we have investigated the stability boundary of ScB2 (0 0 0 1) surfaces using first principles total energy plane-wave pseudopotential method based on density functional theory. The Mulliken charge population analysis shows that Sc atoms in the second layer cannot provide B atoms in the first layer with sufficient electrons to form a complete graphene-like boron layer. We also found that the charge transfer between the first and the second layer for the B-terminated surface is more than that for Sc-terminated surface. It elucidates the reason that the outermost interlayer spacing contract more strongly in the B-terminated surface than in the Sc-terminated surface. The surface energies of both terminated ScB2 (0 0 0 1) surfaces as a function of the chemical potential of B are also calculated to check the relative stability of the two surface structures.

Subsurface defects structural evolution in nano-cutting of single crystal copper

International Nuclear Information System (INIS)

Wang, Quanlong; Bai, Qingshun; Chen, Jiaxuan; Sun, Yazhou; Guo, Yongbo; Liang, Yingchun

2015-01-01

Highlights: • An innovative analysis method is adopted to analyze nano-cutting process accurately. • A characteristic SFT and stair-rod dislocation are found in subsurface defect layer. • The formation mechanism of stair-rod dislocation is investigated. • The local atomic structure of subsurface defects is introduced. - Abstract: In this work, molecular dynamics simulation is performed to study the subsurface defects structural distribution and its evolution during nano-cutting process of single crystal copper. The formation mechanism of chip and machined surface is interviewed by analyzing the dislocation evolution and atomic migration. The centro-symmetry parameter and spherical harmonics method are adopted to characterize the distribution and evolution of the subsurface defect structures and local atomic structures. The results show that stacking faults, dislocation loops, “V-shaped” dislocation loops, and plenty of point defects are formed during the machined surface being formed in shear-slip zone. In subsurface damage layers, stair-rod dislocation, stacking fault tetrahedra, atomic cluster defect, and vacancy defect are formed. And the formation mechanism of stair-rod dislocation is investigated by atomic-scale structure evolution. The local atomic structures of subsurface defects are icosahedrons, hexagonal close packed, body-centered cubic, and defect face center cubic, and the variations of local atomic structures are investigated

Subsurface defects structural evolution in nano-cutting of single crystal copper

Energy Technology Data Exchange (ETDEWEB)

Wang, Quanlong [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Bai, Qingshun [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Chen, Jiaxuan, E-mail: wangquanlong0@hit.edu.cn [Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Sun, Yazhou [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Guo, Yongbo [Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Liang, Yingchun [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China)

2015-07-30

Highlights: • An innovative analysis method is adopted to analyze nano-cutting process accurately. • A characteristic SFT and stair-rod dislocation are found in subsurface defect layer. • The formation mechanism of stair-rod dislocation is investigated. • The local atomic structure of subsurface defects is introduced. - Abstract: In this work, molecular dynamics simulation is performed to study the subsurface defects structural distribution and its evolution during nano-cutting process of single crystal copper. The formation mechanism of chip and machined surface is interviewed by analyzing the dislocation evolution and atomic migration. The centro-symmetry parameter and spherical harmonics method are adopted to characterize the distribution and evolution of the subsurface defect structures and local atomic structures. The results show that stacking faults, dislocation loops, “V-shaped” dislocation loops, and plenty of point defects are formed during the machined surface being formed in shear-slip zone. In subsurface damage layers, stair-rod dislocation, stacking fault tetrahedra, atomic cluster defect, and vacancy defect are formed. And the formation mechanism of stair-rod dislocation is investigated by atomic-scale structure evolution. The local atomic structures of subsurface defects are icosahedrons, hexagonal close packed, body-centered cubic, and defect face center cubic, and the variations of local atomic structures are investigated.

Cariogenic properties of Streptococcus mutans clinical isolates with sortase defects.

Science.gov (United States)

Lapirattanakul, Jinthana; Takashima, Yukiko; Tantivitayakul, Pornpen; Maudcheingka, Thaniya; Leelataweewud, Pattarawadee; Nakano, Kazuhiko; Matsumoto-Nakano, Michiyo

2017-09-01

In Streptococcus mutans, a Gram-positive pathogen of dental caries, several surface proteins are anchored by the activity of sortase enzyme. Although various reports have shown that constructed S. mutans mutants deficient of sortase as well as laboratory reference strains with a sortase gene mutation have low cariogenic potential, no known studies have investigated clinical isolates with sortase defects. Here, we examined the cariogenic properties of S. mutans clinical isolates with sortase defects as well as caries status in humans harboring such defective isolates. Sortase-defective clinical isolates were evaluated for biofilm formation, sucrose-dependent adhesion, stress-induced dextran-dependent aggregation, acid production, and acid tolerance. Additionally, caries indices of subjects possessing such defective isolates were determined. Our in vitro results indicated that biofilm with a lower quantity was formed by sortase-defective as compared to non-defective isolates. Moreover, impairments of sucrose-dependent adhesion and stress-induced dextran-dependent aggregation were found among the isolates with defects, whereas no alterations were seen in regard to acid production or tolerance. Furthermore, glucan-binding protein C, a surface protein anchored by sortase activity, was predominantly detected in culture supernatants of all sortase-defective S. mutans isolates. Although the sortase-defective isolates showed lower cariogenic potential because of a reduction in some cariogenic properties, deft/DMFT indices revealed that all subjects harboring those isolates had caries experience. Our findings suggest the impairment of cariogenic properties in S. mutans clinical isolates with sortase defects, though the detection of these defective isolates seemed not to imply low caries risk in the subjects harboring them. Copyright © 2017 Elsevier Ltd. All rights reserved.

Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects.

Science.gov (United States)

Lu, Juan; Fan, Zhi-Qiang; Gong, Jian; Chen, Jie-Zhi; ManduLa, Huhe; Zhang, Yan-Yang; Yang, Shen-Yuan; Jiang, Xiang-Wei

2018-02-21

The effects of the staggered double vacancies, hydrogen (H), 3d transition metals, for example cobalt, and semiconductor covalent atoms, for example, germanium, nitrogen, phosphorus (P) and silicon adsorption on the transport properties of monolayer phosphorene were studied using density functional theory and non-equilibrium Green's function formalism. It was observed that the performance of the phosphorene tunnel field effect transistors (TFETs) with an 8.8 nm scaling channel length could be improved most effectively, if the adatoms or vacancies were introduced at the source channel interface. For H and P doped devices, the upper limit of on-state currents of phosphorene TFETs were able to be quickly increased to 2465 μA μm -1 and 1652 μA μm -1 , respectively, which not only outperformed the pristine sample, but also met the requirements for high performance logic applications for the next decade in the International Technology Roadmap for Semiconductors (ITRS). It was proved that the defect-induced band gap states make the effective tunneling path between the conduction band (CB) and valence band (VB) much shorter, so that the carriers can be injected easily from the left electrode, then transfer to the channel. In this regard, the tunneling properties of phosphorene TFETs can be manipulated using surface defects. In addition, the effects of spin polarization on the transport properties of doped phosphorene TFETs were also rigorously considered, H and P doped TFETs could achieve a high ON current of 1795 μA μm -1 and 1368 μA μm -1 , respectively, which is closer to realistic nanodevices.

Modelling NDE pulse-echo inspection of misorientated planar rough defects using an elastic finite element method

Energy Technology Data Exchange (ETDEWEB)

Pettit, J. R.; Lowe, M. J. S. [UK Research Centre for NDE, Imperial College London, Exhibition Road, London, SW7 2AZ (United Kingdom); Walker, A. E. [Rolls-Royce Nuclear, PO BOX 2000, Derby, DE21 7XX (United Kingdom)

2015-03-31

Pulse-echo ultrasonic NDE examination of large pressure vessel forgings is a design and construction code requirement in the power generation industry. Such inspections aim to size and characterise potential defects that may have formed during the forging process. Typically these defects have a range of orientations and surface roughnesses which can greatly affect ultrasonic wave scattering behaviour. Ultrasonic modelling techniques can provide insight into defect response and therefore aid in characterisation. However, analytical approaches to solving these scattering problems can become inaccurate, especially when applied to increasingly complex defect geometries. To overcome these limitations a elastic Finite Element (FE) method has been developed to simulate pulse-echo inspections of embedded planar defects. The FE model comprises a significantly reduced spatial domain allowing for a Monte-Carlo based approach to consider multiple realisations of defect orientation and surface roughness. The results confirm that defects aligned perpendicular to the path of beam propagation attenuate ultrasonic signals according to the level of surface roughness. However, for defects orientated away from this plane, surface roughness can increase the magnitude of the scattered component propagating back along the path of the incident beam. This study therefore highlights instances where defect roughness increases the magnitude of ultrasonic scattered signals, as opposed to attenuation which is more often assumed.

III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Kunert, B.; Guo, W.; Mols, Y.; Pantouvaki, M.; Van Campenhout, J.; Langer, R.; Barla, K. [imec, Kapeldreef 75, 3001 Heverlee (Belgium); Tian, B.; Wang, Z.; Shi, Y.; Van Thourhout, D. [Photonics Research Group, Ghent University, Technologiepark-Zwijnaarde 15, 9052 Gent (Belgium)

2016-08-29

We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO{sub 2}) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL.

The role of surface and deep-level defects on the emission of tin oxide quantum dots

International Nuclear Information System (INIS)

Kumar, Vinod; Kumar, Vijay; Som, S; Ntwaeaborwa, O M; Swart, H C; Neethling, J H; Lee, Mike

2014-01-01

This paper reports on the role of surface and deep-level defects on the blue emission of tin oxide quantum dots (SnO 2 QDs) synthesized by the solution-combustion method at different combustion temperatures. X-ray diffraction studies showed the formation of a single rutile SnO 2 phase with a tetragonal lattice structure. High resolution transmission electron microscopy studies revealed an increase in the average dot size from 2.2 to 3.6 nm with an increase of the combustion temperature from 350 to 550 °C. A decrease in the band gap value from 3.37 to 2.76 eV was observed with the increase in dot size due to the quantum confinement effect. The photoluminescence emission was measured for excitation at 325 nm and it showed a broad blue emission band for all the combustion temperatures studied. This was due to the creation of various oxygen and tin vacancies/defects as confirmed by x-ray photoelectron spectroscopy data. The origin of the blue emission in the SnO 2 QDs is discussed with the help of an energy band diagram. (paper)

Influence of casting defects on fatigue strength of an investment cast Ti-6Al-4V alloy

Directory of Open Access Journals (Sweden)

Léopold Gaëlle

2014-06-01

Full Text Available The influence of casting defects on fatigue strength of an investment cast Ti-6Al-4V alloy is investigated. The most common of these defects are: pinhole, linear defect and inclusion. Each of them is currently defined by its size, morphology and position from the surface but is different from each other for a same type. An experimental campaign is defined with different types of defect. The first part of the campaign is focused on the influence of an artificial and spherical defect, considering two different surface conditions. It is shown that fatigue behaviour of this alloy is very sensitive to the surface condition of this artificial defect despite stress concentrations at the tip of the defect. The second part of the campaign is focused on casting defects: reduction of fatigue life is quantified and it is shown that an electro-discharge machined defect cannot be representative of pinhole.

The role of point defects and defect complexes in silicon device processing. Summary report and papers

Energy Technology Data Exchange (ETDEWEB)

Sopori, B.; Tan, T.Y.

1994-08-01

This report is a summary of a workshop hold on August 24--26, 1992. Session 1 of the conference discussed characteristics of various commercial photovoltaic silicon substrates, the nature of impurities and defects in them, and how they are related to the material growth. Session 2 on point defects reviewed the capabilities of theoretical approaches to determine equilibrium structure of defects in the silicon lattice arising from transitional metal impurities and hydrogen. Session 3 was devoted to a discussion of the surface photovoltaic method for characterizing bulk wafer lifetimes, and to detailed studies on the effectiveness of various gettering operations on reducing the deleterious effects of transition metals. Papers presented at the conference are also included in this summary report.

Density Functional Theory Study on Defect Feature of AsGaGaAs in Gallium Arsenide

Directory of Open Access Journals (Sweden)

Deming Ma

2015-01-01

Full Text Available We investigate the defect feature of AsGaGaAs defect in gallium arsenide clusters in detail by using first-principles calculations based on the density functional theory (DFT. Our calculations reveal that the lowest donor level of AsGaGaAs defect on the gallium arsenide crystal surface is 0.85 eV below the conduction band minimum, while the lowest donor level of the AsGaGaAs defect inside the gallium arsenide bulk is 0.83 eV below the bottom of the conduction band, consistent with gallium arsenide EL2 defect level of experimental value (Ec-0.82 eV. This suggests that AsGaGaAs defect is one of the possible gallium arsenide EL2 deep-level defects. Moreover, our results also indicate that the formation energies of internal AsGaGaAs and surface AsGaGaAs defects are predicted to be around 2.36 eV and 5.54 eV, respectively. This implies that formation of AsGaGaAs defect within the crystal is easier than that of surface. Our results offer assistance in discussing the structure of gallium arsenide deep-level defect and its effect on the material.

Spectroscopy and control of near-surface defects in conductive thin film ZnO

KAUST Repository

Kelly, Leah L; Racke, David A; Schulz, Philip; Li, Hong; Winget, Paul; Kim, Hyungchul; Ndione, Paul; Sigdel, Ajaya K; Bredas, Jean-Luc; Berry, Joseph J; Graham, Samuel; Monti, Oliver L A

2016-01-01

The electronic structure of inorganic semiconductor interfaces functionalized with extended π-conjugated organic molecules can be strongly influenced by localized gap states or point defects, often present at low concentrations and hard to identify spectroscopically. At the same time, in transparent conductive oxides such as ZnO, the presence of these gap states conveys the desirable high conductivity necessary for function as electron-selective interlayer or electron collection electrode in organic optoelectronic devices. Here, we report on the direct spectroscopic detection of a donor state within the band gap of highly conductive zinc oxide by two-photon photoemission spectroscopy. We show that adsorption of the prototypical organic acceptor C60 quenches this state by ground-state charge transfer, with immediate consequences on the interfacial energy level alignment. Comparison with computational results suggests the identity of the gap state as a near-surface-confined oxygen vacancy.

Spectroscopy and control of near-surface defects in conductive thin film ZnO

KAUST Repository

Kelly, Leah L

2016-02-12

The electronic structure of inorganic semiconductor interfaces functionalized with extended π-conjugated organic molecules can be strongly influenced by localized gap states or point defects, often present at low concentrations and hard to identify spectroscopically. At the same time, in transparent conductive oxides such as ZnO, the presence of these gap states conveys the desirable high conductivity necessary for function as electron-selective interlayer or electron collection electrode in organic optoelectronic devices. Here, we report on the direct spectroscopic detection of a donor state within the band gap of highly conductive zinc oxide by two-photon photoemission spectroscopy. We show that adsorption of the prototypical organic acceptor C60 quenches this state by ground-state charge transfer, with immediate consequences on the interfacial energy level alignment. Comparison with computational results suggests the identity of the gap state as a near-surface-confined oxygen vacancy.

Protective capping and surface passivation of III-V nanowires by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Dhaka, Veer, E-mail: veer.dhaka@aalto.fi; Perros, Alexander; Kakko, Joona-Pekko; Haggren, Tuomas; Lipsanen, Harri [Department of Micro- and Nanosciences, Micronova, Aalto University, P.O. Box 13500, FI-00076 (Finland); Naureen, Shagufta; Shahid, Naeem [Research School of Physics & Engineering, Department of Electronic Materials Engineering, Australian National University, Canberra ACT 2601 (Australia); Jiang, Hua; Kauppinen, Esko [Department of Applied Physics and Nanomicroscopy Center, Aalto University, P.O. Box 15100, FI-00076 (Finland); Srinivasan, Anand [School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, S-164 40 Kista (Sweden)

2016-01-15

Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al{sub 2}O{sub 3}, GaN, and TiO{sub 2} were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al{sub 2}O{sub 3}. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al{sub 2}O{sub 3} layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al{sub 2}O{sub 3} provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

Protective capping and surface passivation of III-V nanowires by atomic layer deposition

Directory of Open Access Journals (Sweden)

Veer Dhaka

2016-01-01

Full Text Available Low temperature (∼200 °C grown atomic layer deposition (ALD films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP nanowires (NWs, and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL at low temperatures (15K, and the best passivation was achieved with a few monolayer thick (2Å film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures.

Science.gov (United States)

Ng, Wing H; Lu, Yao; Liu, Huiyun; Carmalt, Claire J; Parkin, Ivan P; Kenyon, Anthony J

2018-02-23

Inorganic semiconductors such as III-V materials are very important in our everyday life as they are used for manufacturing optoelectronic and microelectronic components with important applications span from energy harvesting to telecommunications. In some applications, these components are required to operate in harsh environments. In these cases, having waterproofing capability is essential. Here we demonstrate design and control of the wettability of indium phosphide based multilayer material (InP/InGaAs/InP) using re-entrant structures fabricated by a fast electron beam lithography technique. This patterning technique enabled us to fabricate highly uniform nanostructure arrays with at least one order of magnitude shorter patterning times compared to conventional electron beam lithography methods. We reduced the surface contact fraction significantly such that the water droplets may be completely removed from our nanostructured surface. We predicted the wettability of our patterned surface by modelling the adhesion energies between the water droplet and both the patterned surface and the dispensing needle. This is very useful for the development of coating-free waterproof optoelectronic and microelectronic components where the coating may hinder the performance of such devices and cause problems with semiconductor fabrication compatibility.

Ultrasonic defect detection method for socket welding joint

International Nuclear Information System (INIS)

Tominaga, Masaaki; Matsuo, Toshiyuki; Ueno, Akihiro; Watanabe, Kunimichi; Kawamata, Kunio.

1995-01-01

The present invention provides a method of detecting defects over a wide range of a socket weld portion of various kinds of pipelines used, for example, in a nuclear power plant. Namely, an inclined probe is disposed to a jig for detecting defects by ultrasonic waves. This is rotated at least by one turn along the peripheral surface of the material to be detected such as weld tube joints. Defects of weld portion of the material can be detected automatically by using ultrasonic waves during the rotation. The inclined probe for detecting defects by ultrasonic waves comprises a transmission portion having a planar transmittance oscillator disposed to a wedge on the transmission side and a receiving portion comprising a planar receiving oscillator disposed to a wedge on the receiving side. With such a constitution, ultrasonic waves are emitted from the transmission portion to the defect detection portion in the welded portion. If a defect is present, defective echo is reflected to the receiving portion disposed ahead of the probe. Since the defective echo changes depending on the height of the detective portion, the estimation of the height of the defect can be facilitated. (I.S.)

Six-dimensional Origin of $\\mathcal{N}=4$ SYM with Duality Defects

CERN Document Server

Assel, Benjamin

2016-12-14

We study the topologically twisted compactification of the 6d $(2,0)$ M5-brane theory on an elliptically fibered K\\"ahler three-fold preserving two supercharges. We show that upon reducing on the elliptic fiber, the 4d theory is $\\mathcal{N}=4$ Super-Yang Mills, with varying complexified coupling $\\tau$, in the presence of defects. For abelian gauge group this agrees with the so-called duality twisted theory, and we determine a non-abelian generalization to $U(N)$. When the elliptic fibration is singular, the 4d theory contains 3d walls (along the branch-cuts of $\\tau$) and 2d surface defects, around which the 4d theory undergoes $SL(2,\\mathbb{Z})$ duality transformations. Such duality defects carry chiral fields, which from the 6d point of view arise as modes of the two-form $B$ in the tensor multiplet. Each duality defect has a flavor symmetry associated to it, which is encoded in the structure of the singular elliptic fiber above the defect. Generically 2d surface defects will intersect in points in 4d, wh...

Defect generation/passivation by low energy hydrogen implant for silicon solar cells

International Nuclear Information System (INIS)

Sopori, B.L.; Zhou, T.Q.; Rozgonyi, G.A.

1990-01-01

Low energy ion implant is shown to produce defects in silicon. These defects include surface damage, hydrogen agglomeration, formation of platelets with (111) habit plane and decoration of dislocations. Hydrogen also produces an inversion type of surface on boron doped silicon. These effects indicate that a preferred approach for passivation is to incorporate hydrogen from the back side of the cell. A backside H + implant technique is described. The results show that degree of passivation differs for various devices. A comparison of the defect structures of hydrogenated devices indicates that the structure and the distribution of defects in the bulk of the material plays a significant role in determining the degree of passivation

Ultrasonic defect characterization using parametric-manifold mapping

Science.gov (United States)

Velichko, A.; Bai, L.; Drinkwater, B. W.

2017-06-01

The aim of ultrasonic non-destructive evaluation includes the detection and characterization of defects, and an understanding of the nature of defects is essential for the assessment of structural integrity in safety critical systems. In general, the defect characterization challenge involves an estimation of defect parameters from measured data. In this paper, we explore the extent to which defects can be characterized by their ultrasonic scattering behaviour. Given a number of ultrasonic measurements, we show that characterization information can be extracted by projecting the measurement onto a parametric manifold in principal component space. We show that this manifold represents the entirety of the characterization information available from far-field harmonic ultrasound. We seek to understand the nature of this information and hence provide definitive statements on the defect characterization performance that is, in principle, extractable from typical measurement scenarios. In experiments, the characterization problem of surface-breaking cracks and the more general problem of elliptical voids are studied, and a good agreement is achieved between the actual parameter values and the characterization results. The nature of the parametric manifold enables us to explain and quantify why some defects are relatively easy to characterize, whereas others are inherently challenging.

Substrate and coating defect planarization strategies for high-laser-fluence multilayer mirrors

International Nuclear Information System (INIS)

Stolz, Christopher J.; Wolfe, Justin E.; Mirkarimi, Paul B.; Folta, James A.; Adams, John J.; Menor, Marlon G.; Teslich, Nick E.; Soufli, Regina; Menoni, Carmen S.; Patel, Dinesh

2015-01-01

Planarizing or smoothing over nodular defects in multilayer mirrors can be accomplished by a discrete deposit-and-etch process that exploits the angle-dependent etching rate of optical materials. Typically, nodular defects limit the fluence on mirrors irradiated at 1064 nm with 10 ns pulse lengths due to geometrically- and interference-induced light intensification. Planarized hafina/silica multilayer mirrors have demonstrated > 125 J/cm 2 laser resistance for single-shot testing and 50 J/cm 2 for multi-shot testing for nodular defects originating on the substrate surface. Two planarization methods were explored: thick planarization layers on the substrate surface and planarized silica layers throughout the multilayer in which only the silica layers that are below one half of the incoming electric field value are etched. This paper also describes the impact of planarized defects that are buried within the multilayer structure compared to planarized substrate particulate defects. - Highlights: • Defect planarization significantly improves multilayer mirror laser resistance • Substrate and coating defects have both been effectively planarized • Single and multishot laser resistance improvement was demonstrated

Study of defect characteristics essential for NDT testing methods ET, UT and RT

International Nuclear Information System (INIS)

Wirdelius, H.; Oesterberg, Elena

2000-10-01

This paper presents results from a literature review of defect characteristics essential for nondestructive testing (NDT). Most of the major NDT methods are included in the study - ultrasonic testing (UT), radiography (RT) and eddy current testing (ET). The study was performed by means of searching in scientific databases, technical journals, conference proceedings etc. Mainly the following databases were used: CHANS (Chalmers database), INSPEC, NTIS, Ei Compendex, World Surface Coating Abs, METADEX, JICST-Eplus, Aerospace database, Pascal, Eng Materials, SciSearch and Weldasearch. It is concluded that for eddy current testing, the defect geometry, the defect size and the defect orientation influence the outcome signal. A number of investigations address the relationships between the defect parameters like defect depth, length and width and the outcome signal parameters like amplitude, phase and signal shape. Also the phenomena of the electrical contacts between the defect surfaces (for a crack) was studied. Defect parameters that are essential to the quality of ultrasonic testing are defect position in the object (includes the depth), orientation, size, crack surface roughness, closure and tip radius. This investigation has been focused on those parameters that are not that easy to reconstruct and only briefly discussed the influence on the signal response due to defect position, orientation and size. When it comes to radiographic techniques, the most important defect related parameters that influence the quality are the difference in radio opacity of the specimen and defect and the angle between the volumetric extension of the defect and the direction of projection. The defect gape and the morphology of the crack are also very essential parameters. A very simple model of the detectability as a function of depth, width and misorientation (angle to the radiation beam) has been validated and to some extent also verified in a number of papers. Even for defects with

Positron annihilation spectroscopy in defects of semiconductors

CERN Document Server

Fujinami, M

2002-01-01

Interaction of positron and defects, application to research of defects of semiconductor and defects on the surface of semiconductor are explained. Cz (Czochralski)-Si single crystal with 10 sup 1 sup 8 cm sup - sup 3 impurity oxygen was introduced defects by electron irradiation and the positron lifetime was measured at 90K after annealing. The defect size and recovery temperature were determined by the lifetime measurement. The distribution of defects in the depth direction is shown by S-E curve. The chemical state analysis is possible by CBS (Coincidence Doppler Broadening) spectra. The application to silicon-implanted (100 keV, 2x10 sup 1 sup 5 cm sup - sup 2) silicon and oxygen-implanted (180 keV, 2x10 sup 1 sup 5 cm sup - sup 2) silicon are stated. On the oxygen-implanted silicon, the main product was V2 after implantation, V sub 6 O sub 2 at 600degC and V sub 1 sub 0 O sub 6 at 800degC. (S.Y.)

Influence of cover defects on the attenuation of radon with earthen covers

International Nuclear Information System (INIS)

Kalkwarf, D.R.; Mayer, D.W.

1983-11-01

Experimental and theoretical evaluations of radon flux through laboratory-scale defective soil columns are presented together with a survey of literature on the formation and prevention of defects in soil covers. This report focuses on air-filled, centimeter-scale defects that are most probable in earthen covers for attenuating radon emission from uranium-mill tailings. Examples include shirnkage and erosion cracks, erosion piping, animal burrows and air channels formed by the biodegradation of vegetation roots. Calculations based on mathematical models indicate that collections of defects which could increase the radon flux from an earthen cover by a factor of two would be easily detected by visual inspection. However, these models ignore air-turbulence in the defect and drying of the soil around the defect. Laboratory measurements showed that turbulent diffusion of radon occurred through defects as narrow as 0.3 cm when subjected to a transverse air velocity of 1 to 6 miles per hour at the surface. Both turbulence and more-rapid drying of soil can accelerate radon flux to the cover surface. Consequently, recommended methods to inhibit defect formation should be applied. 29 references, 3 figures, 5 tables

Theoretical Investigation on Single-Wall Carbon Nanotubes Doped with Nitrogen, Pyridine-Like Nitrogen Defects, and Transition Metal Atoms

Directory of Open Access Journals (Sweden)

Michael Mananghaya

2012-01-01

Full Text Available This study addresses the inherent difficulty in synthesizing single-walled carbon nanotubes (SWCNTs with uniform chirality and well-defined electronic properties through the introduction of dopants, topological defects, and intercalation of metals. Depending on the desired application, one can modify the electronic and magnetic properties of SWCNTs through an appropriate introduction of imperfections. This scheme broadens the application areas of SWCNTs. Under this motivation, we present our ongoing investigations of the following models: (i (10, 0 and (5, 5 SWCNT doped with nitrogen (CNxNT, (ii (10, 0 and (5, 5 SWCNT with pyridine-like defects (3NV-CNxNT, (iii (10, 0 SWCNT with porphyrine-like defects (4ND-CNxNT. Models (ii and (iii were chemically functionalized with 14 transition metals (TMs: Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Pd, Ag, Pt and Au. Using the spin-unrestricted density functional theory (DFT, stable configurations, deformations, formation and binding energies, the effects of the doping concentration of nitrogen, pyridine-like and porphyrine-like defects on the electronic properties were all examined. Results reveal that the electronic properties of SWCNTs show strong dependence on the concentration and configuration of nitrogen impurities, its defects, and the TMs adsorbed.

Identification of the gallium vacancy-oxygen pair defect in GaN

International Nuclear Information System (INIS)

Son, N. T.; Hemmingsson, C. G.; Janzen, E.; Paskova, T.; Evans, K. R.; Usui, A.; Morishita, N.; Ohshima, T.; Isoya, J.; Monemar, B.

2009-01-01

Cation vacancies like V Ga , V Al and their complexes with oxygen are predicted to be abundant in III-nitrides and to play an important role in nonradiative recombination. Appearing in triple or double negatively charged states, they are not paramagnetic and have not so far been detected by magnetic resonance even under illumination. In this Brief Report, we demonstrate an efficient way to make cation vacancy defects in GaN detectable by electron paramagnetic resonance and present our identification of the V Ga O N pair in GaN which is the model material for the III-nitrides and their alloys.

Defect study of Cu2ZnSn(SxSe1-x)4 thin film absorbers using photoluminescence and modulated surface photovoltage spectroscopy

Science.gov (United States)

Lin, Xianzhong; Ennaoui, Ahmed; Levcenko, Sergiu; Dittrich, Thomas; Kavalakkatt, Jaison; Kretzschmar, Steffen; Unold, Thomas; Lux-Steiner, Martha Ch.

2015-01-01

Defect states in Cu2ZnSn(SxSe1-x)4 thin films with x = 0.28, 0.36, and 1 were studied by combining photoluminescence (PL) and modulated surface photovoltage (SPV) spectroscopy. A single broad band emission in the PL spectra was observed and can be related to quasi-donor-acceptor pair transitions. The analysis of the temperature dependent quenching of the PL band (x = 0.28, 0.36, and 1) and SPV (x = 0.28) signals resulted in activation energies below 150 meV for PL and about 90 and 300 meV for SPV. Possible intrinsic point defects that might be associated with these observed activation energies are discussed.

Mean Glenoid Defect Size and Location Associated With Anterior Shoulder Instability

Science.gov (United States)

Gottschalk, Lionel J.; Bois, Aaron J.; Shelby, Marcus A.; Miniaci, Anthony; Jones, Morgan H.

2017-01-01

Background: There is a strong correlation between glenoid defect size and recurrent anterior shoulder instability. A better understanding of glenoid defects could lead to improved treatments and outcomes. Purpose: To (1) determine the rate of reporting numeric measurements for glenoid defect size, (2) determine the consistency of glenoid defect size and location reported within the literature, (3) define the typical size and location of glenoid defects, and (4) determine whether a correlation exists between defect size and treatment outcome. Study Design: Systematic review; Level of evidence, 4. Methods: PubMed, Ovid, and Cochrane databases were searched for clinical studies measuring glenoid defect size or location. We excluded studies with defect size requirements or pathology other than anterior instability and studies that included patients with known prior surgery. Our search produced 83 studies; 38 studies provided numeric measurements for glenoid defect size and 2 for defect location. Results: From 1981 to 2000, a total of 5.6% (1 of 18) of the studies reported numeric measurements for glenoid defect size; from 2001 to 2014, the rate of reporting glenoid defects increased to 58.7% (37 of 63). Fourteen studies (n = 1363 shoulders) reported defect size ranges for percentage loss of glenoid width, and 9 studies (n = 570 shoulders) reported defect size ranges for percentage loss of glenoid surface area. According to 2 studies, the mean glenoid defect orientation was pointing toward the 3:01 and 3:20 positions on the glenoid clock face. Conclusion: Since 2001, the rate of reporting numeric measurements for glenoid defect size was only 58.7%. Among studies reporting the percentage loss of glenoid width, 23.6% of shoulders had a defect between 10% and 25%, and among studies reporting the percentage loss of glenoid surface area, 44.7% of shoulders had a defect between 5% and 20%. There is significant variability in the way glenoid bone loss is measured, calculated

THz Imaging as a Method to Detect Defects of Aeronautical Coatings

Science.gov (United States)

Catapano, I.; Soldovieri, F.; Mazzola, L.; Toscano, C.

2017-10-01

Ice adhesion over critical aircraft surfaces is a serious potential hazard that runs the risk of causing accidents. To face this issue, the design and diagnostics of new multifunctional coatings with icephobic and aesthetical properties are demanded. In particular, diagnostic tools, capable of characterizing coating surface finishing and its defects, are needed. In this paper, terahertz (THz) imaging is considered as a high-resolution diagnostic tool useful for contactless surveys providing information on surface defects and material inner structure. Therefore, two composite specimens, one covered by a classical commercial livery coating and the other one by a new multifunctional coating with icephobic properties, are investigated by THz surveys carried out in normal environmental conditions of pressure and temperature. The results, obtained by processing the raw data properly, corroborate that THz imaging allows us to detect variations of the coating thickness, to localize hidden anomalies as well as to characterize surface defects at millimetric scale.

Evaluation of condyle defects using different reconstruction protocols of cone-beam computed tomography

International Nuclear Information System (INIS)

Bastos, Luana Costa; Campos, Paulo Sergio Flores; Ramos-Perez, Flavia Maria de Moraes; Pontual, Andrea dos Anjos; Almeida, Solange Maria

2013-01-01

This study was conducted to investigate how well cone-beam computed tomography (CBCT) can detect simulated cavitary defects in condyles, and to test the influence of the reconstruction protocols. Defects were created with spherical diamond burs (numbers 1013, 1016, 3017) in superior and / or posterior surfaces of twenty condyles. The condyles were scanned, and cross-sectional reconstructions were performed with nine different protocols, based on slice thickness (0.2, 0.6, 1.0 mm) and on the filters (original image, Sharpen Mild, S9) used. Two observers evaluated the defects, determining their presence and location. Statistical analysis was carried out using simple Kappa coefficient and McNemar’s test to check inter- and intra-rater reliability. The chi-square test was used to compare the rater accuracy. Analysis of variance (Tukey's test) assessed the effect of the protocols used. Kappa values for inter- and intra-rater reliability demonstrate almost perfect agreement. The proportion of correct answers was significantly higher than that of errors for cavitary defects on both condyle surfaces (p < 0.01). Only in identifying the defects located on the posterior surface was it possible to observe the influence of the 1.0 mm protocol thickness and no filter, which showed a significantly lower value. Based on the results of the current study, the technique used was valid for identifying the existence of cavities in the condyle surface. However, the protocol of a 1.0 mm-thick slice and no filter proved to be the worst method for identifying the defects on the posterior surface. (author)

Evaluation of condyle defects using different reconstruction protocols of cone-beam computed tomography

Energy Technology Data Exchange (ETDEWEB)

Bastos, Luana Costa; Campos, Paulo Sergio Flores, E-mail: bastosluana@ymail.com [Universidade Federal da Bahia (UFBA), Salvador, BA (Brazil). Fac. de Odontologia. Dept. de Radiologia Oral e Maxilofacial; Ramos-Perez, Flavia Maria de Moraes [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil). Fac. de Odontologia. Dept. de Clinica e Odontologia Preventiva; Pontual, Andrea dos Anjos [Universidade Federal de Pernambuco (UFPE), Camaragibe, PE (Brazil). Fac. de Odontologia. Dept. de Radiologia Oral; Almeida, Solange Maria [Universidade Estadual de Campinas (UNICAMP), Piracicaba, SP (Brazil). Fac. de Odontologia. Dept. de Radiologia Oral

2013-11-15

This study was conducted to investigate how well cone-beam computed tomography (CBCT) can detect simulated cavitary defects in condyles, and to test the influence of the reconstruction protocols. Defects were created with spherical diamond burs (numbers 1013, 1016, 3017) in superior and / or posterior surfaces of twenty condyles. The condyles were scanned, and cross-sectional reconstructions were performed with nine different protocols, based on slice thickness (0.2, 0.6, 1.0 mm) and on the filters (original image, Sharpen Mild, S9) used. Two observers evaluated the defects, determining their presence and location. Statistical analysis was carried out using simple Kappa coefficient and McNemar’s test to check inter- and intra-rater reliability. The chi-square test was used to compare the rater accuracy. Analysis of variance (Tukey's test) assessed the effect of the protocols used. Kappa values for inter- and intra-rater reliability demonstrate almost perfect agreement. The proportion of correct answers was significantly higher than that of errors for cavitary defects on both condyle surfaces (p < 0.01). Only in identifying the defects located on the posterior surface was it possible to observe the influence of the 1.0 mm protocol thickness and no filter, which showed a significantly lower value. Based on the results of the current study, the technique used was valid for identifying the existence of cavities in the condyle surface. However, the protocol of a 1.0 mm-thick slice and no filter proved to be the worst method for identifying the defects on the posterior surface. (author)

Defects and defect processes in nonmetallic solids

CERN Document Server

Hayes, W

2004-01-01

This extensive survey covers defects in nonmetals, emphasizing point defects and point-defect processes. It encompasses electronic, vibrational, and optical properties of defective solids, plus dislocations and grain boundaries. 1985 edition.

Detection of Defects of BGA by Tomography Imaging

Directory of Open Access Journals (Sweden)

Tetsuhiro SUMIMOTO

2005-08-01

Full Text Available To improve a cost performance and the reliability of PC boards, an inspection of BGA is required in the surface mount process. Types of defects at BGA solder joints are solder bridges, missing connections, solder voids, open connections and miss-registrations of parts. As we can find mostly solder bridges in these defects, we pick up this to detect solder bridge in a production line. The problems of image analysis for the detection of defects at BGA solder joints are the detection accuracy and image processing time according to a line speed of production. To get design data for the development of the inspection system, which can be used easily in the surface mount process, it is important to develop image analysis techniques based on the X-ray image data. We attempt to detect the characteristics of the defects of BGA based on an image analysis. Using the X-ray penetration equipment, we have captured images of an IC package to search an abnormal BGA. Besides, in order to get information in detail of an abnormal BGA, we tried to capture the tomographic images utilizing the latest imaging techniques.

ARIES-III divertor engineering design

International Nuclear Information System (INIS)

Wong, C.P.C.; Schultz, K.R.; Cheng, E.T.; Grotz, S.; Hasan, M.A.; Najmabadi, F.; Sharafat, S.; Herring, J.S.; Valenti, M.; Steiner, D.

1992-01-01

This paper reports the engineering design of the ARIES-III double- null divertor. The divertor coolant tubes are made from W-3Re alloy and cooled by subcooled flow boiling of organic coolant. A coating of 4 mm thick tungsten is plasma sprayed onto the divertor surface. This W layer can withstand the thermal deposition of a few disruptions. At a maximum surface heat flux of 5.4 MW/m 2 , a conventional divertor design can be used. The divertor surface is contoured to have a constant heat flux of 5.4 MW/m 2 . The net erosion of the W-surface was found to be negligible at about 0.1 mm/year. After 3 years of operation, the W-3Re alloy ARIES-III divertor can be disposed of as Class A waste. In order to control the prompt dose release at site boundary to less than 200 Rem, isotopic tailoring of the W-alloy will be needed

ARIES-III divertor engineering design

Energy Technology Data Exchange (ETDEWEB)

Wong, C.P.C.; Schultz, K.R. [General Atomics, San Diego, CA (United States); Cheng, E.T. [TSI Research, Solana Beach, CA (United States); Grotz, S.; Hasan, M.A.; Najmabadi, F.; Sharafat, S. [California Univ., Los Angeles, CA (United States). Dept. of Mechanical, Aerospace and Nuclear Engineering; Brooks, J.N.; Ehst, D.A.; Sze, D.K. [Argonne National Lab., IL (United States); Herring, J.S. [EG and G Idaho, Inc., Idaho Falls, ID (United States); Valenti, M.; Steiner, D. [Rensselaer Polytechnic Inst., Troy, NY (United States). Plasma Dynamics Lab.

1992-01-01

This paper reports the engineering design of the ARIES-III double- null divertor. The divertor coolant tubes are made from W-3Re alloy and cooled by subcooled flow boiling of organic coolant. A coating of 4 mm thick tungsten is plasma sprayed onto the divertor surface. This W layer can withstand the thermal deposition of a few disruptions. At a maximum surface heat flux of 5.4 MW/m{sup 2}, a conventional divertor design can be used. The divertor surface is contoured to have a constant heat flux of 5.4 MW/m{sup 2}. The net erosion of the W-surface was found to be negligible at about 0.1 mm/year. After 3 years of operation, the W-3Re alloy ARIES-III divertor can be disposed of as Class A waste. In order to control the prompt dose release at site boundary to less than 200 Rem, isotopic tailoring of the W-alloy will be needed.

Skull defect reconstruction based on a new hybrid level set.

Science.gov (United States)

Zhang, Ziqun; Zhang, Ran; Song, Zhijian

2014-01-01

Skull defect reconstruction is an important aspect of surgical repair. Historically, a skull defect prosthesis was created by the mirroring technique, surface fitting, or formed templates. These methods are not based on the anatomy of the individual patient's skull, and therefore, the prosthesis cannot precisely correct the defect. This study presented a new hybrid level set model, taking into account both the global optimization region information and the local accuracy edge information, while avoiding re-initialization during the evolution of the level set function. Based on the new method, a skull defect was reconstructed, and the skull prosthesis was produced by rapid prototyping technology. This resulted in a skull defect prosthesis that well matched the skull defect with excellent individual adaptation.

Stability of defects in monolayer MoS_2 and their interaction with O_2 molecule: A first-principles study

International Nuclear Information System (INIS)

Zhao, B.; Shang, C.; Qi, N.; Chen, Z.Y.; Chen, Z.Q.

2017-01-01

Highlights: • Defects can exist steadily in monolayer MoS_2 and break surface chemical inertness. • Activated surfaces are beneficial to the adsorption of O_2 through the introduction of defect levels. • Adsorbed O_2 on defective surface can dissociate with low activation energy barrier. • Defective system may be a potential substrate to design MoS_2-based gas sensor or catalysts. - Abstract: The stability of various defects in monolayer MoS_2, as well as their interactions with free O_2 molecules were investigated by density functional theory (DFT) calculations coupled with the nudged elastic band (NEB) method. The defects including S vacancy (monosulfur and disulfue vacancies), antisite defect (Mo_S) and external Mo atom can exist steadily in monolayer MoS_2, and introduce defect levels in these defective systems, which breaks the surface chemical inertness and significantly enhances the adsorption capacity for free O_2. The adsorption energy calculations and electronic properties analysis suggest that there is a strong interaction between O_2 molecule and defective system. The adsorbed O_2 on the defective surface can dissociate with a lower activation energy barrier, which produce two active oxygen atoms. Especially, two Mo atoms can occupy one Mo lattice site, and adsorbed O_2 on the top of the Mo atom can then dissociate directly with the lowest activation energy barrier. Hence, our work may provide useful information to design MoS_2-based gas sensor or catalysts.

Defect Chemistry of Oxides for Energy Applications.

Science.gov (United States)

Schweke, Danielle; Mordehovitz, Yuval; Halabi, Mahdi; Shelly, Lee; Hayun, Shmuel

2018-05-31

Oxides are widely used for energy applications, as solid electrolytes in various solid oxide fuel cell devices or as catalysts (often associated with noble metal particles) for numerous reactions involving oxidation or reduction. Defects are the major factors governing the efficiency of a given oxide for the above applications. In this paper, the common defects in oxide systems and external factors influencing the defect concentration and distribution are presented, with special emphasis on ceria (CeO 2 ) based materials. It is shown that the behavior of a variety of oxide systems with respect to properties relevant for energy applications (conductivity and catalytic activity) can be rationalized by general considerations about the type and concentration of defects in the specific system. A new method based on transmission electron microscopy (TEM), recently reported by the authors for mapping space charge defects and measuring space charge potentials, is shown to be of potential importance for understanding conductivity mechanisms in oxides. The influence of defects on gas-surface reactions is exemplified on the interaction of CO 2 and H 2 O with ceria, by correlating between the defect distribution in the material and its adsorption capacity or splitting efficiency. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigation on the effect of temperature excursion on the helium defects of tungsten surface by using compact plasma device

International Nuclear Information System (INIS)

Takamura, S.; Miyamoto, T.; Tomida, Y.; Minagawa, T.; Ohno, N.

2011-01-01

The effects of temperature excursion on the helium defects of tungsten surface have been investigated by using compact plasma device AIT-PID (Aichi Institute of Technology - Plasma Irradiation Device). An initial stage of bubble formation has been identified with an order of smaller (sub-micron) bubbles and holes than those in the past in which the micron size is the standard magnitude. The radiation cooling has been detected when a blacking of tungsten surface coming from nanostructure formation is proceeding due to an increase in the emissivity. The temperature increase to the domain (∼1600 K) in bubble/hole formation from that in nanostructure formation has been found to bring a constriction in diameter and a reduction in length of fiber-form nanostructure.

The approach to analysis of significance of flaws in ASME section III and section XI

International Nuclear Information System (INIS)

Cowan, A.

1979-01-01

ASME III Appendix G and ASME XI Appendix A describe linear elastic fracture mechanics methods to assess the significance of defects in thick-walled pressure vessels for nuclear reactor systems. The assessment of fracture toughness, Ksub(Ic), is based upon recommendations made by a Task Group of the USA Pressure Vessel Research Committee and is dependent upon correlations with drop weight and Charpy V-notch data to give a lower bound of fracture toughness Ksub(IR). The methods used in the ASME Appendices are outlined noting that, whereas ASME III Appendix G defines a procedure for obtaining allowable pressure vessel loadings for normal service in the presence of a defect, ASME XI Appendix A defines methods for assessing the significance of defects (found by volumetric inspection) under normal and emergency and faulted conditions. The methods of analysis are discussed with respect to material properties, flaw characterisation, stress analysis and recommended safety factors; a short discussion is given on the applicability of the data and methods to other materials and non-nuclear structures. (author)

Packing defects into ordered structures

DEFF Research Database (Denmark)

Bechstein, R.; Kristoffersen, Henrik Høgh; Vilhelmsen, L.B.

2012-01-01

. With the help of density functional theory calculations we develop a complete structural model for the entire strand and demonstrate these adstructures to be more stable than an equivalent amount of bulk defects such as Ti interstitials. We argue that strands can form particularly easy on stepped surfaces......We have studied vicinal TiO2(110) surfaces by high-resolution scanning tunneling microscopy and density functional theory calculations. On TiO2 surfaces characterized by a high density of ⟨11̅ 1⟩ steps, scanning tunneling microscopy reveals a high density of oxygen-deficient strandlike adstructures...

Modelling water vapour permeability through atomic layer deposition coated photovoltaic barrier defects

Energy Technology Data Exchange (ETDEWEB)

Elrawemi, Mohamed, E-mail: Mohamed.elrawemi@hud.ac.uk [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom); Blunt, Liam; Fleming, Leigh [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom); Bird, David, E-mail: David.Bird@uk-cpi.com [Centre for Process Innovation Limited, Sedgefield, County Durham (United Kingdom); Robbins, David [Centre for Process Innovation Limited, Sedgefield, County Durham (United Kingdom); Sweeney, Francis [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom)

2014-11-03

Transparent barrier films such as Al{sub 2}O{sub 3} used for prevention of oxygen and/or water vapour permeation are the subject of increasing research interest when used for the encapsulation of flexible photovoltaic modules. However, the existence of micro-scale defects in the barrier surface topography has been shown to have the potential to facilitate water vapour ingress, thereby reducing cell efficiency and causing internal electrical shorts. Previous work has shown that small defects (≤ 3 μm lateral dimension) were less significant in determining water vapour ingress. In contrast, larger defects (≥ 3 μm lateral dimension) seem to be more detrimental to the barrier functionality. Experimental results based on surface topography segmentation analysis and a model presented in this paper will be used to test the hypothesis that the major contributing defects to water vapour transmission rate are small numbers of large defects. The model highlighted in this study has the potential to be used for gaining a better understanding of photovoltaic module efficiency and performance. - Highlights: • A model of water vapour permeation through barrier defects is presented. • The effect of the defects on the water vapour permeability is investigated. • Defect density correlates with water vapour permeability. • Large defects may dominate the permeation properties of the barrier film.

Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide

International Nuclear Information System (INIS)

Wampler, William R.; Myers, Samuel M.

2015-01-01

A model is presented for recombination of charge carriers at evolving displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with the details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers, and defects within a representative spherically symmetric cluster of defects. The initial radial defect profiles within the cluster were determined through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to displacement damage from energetic particle irradiation

Acrolein coupling on reduced TiO 2(1 1 0): The effect of surface oxidation and the role of subsurface defects

Science.gov (United States)

Benz, Lauren; Haubrich, Jan; Quiller, Ryan G.; Friend, Cynthia M.

2009-04-01

Reactions of acrolein, water, and oxygen with the vacuum-reduced surface of TiO 2(1 1 0) are reported in a temperature programmed reaction study of the interaction of an aldehydic pollutant with a reducible metal oxide. A total of 25% of the acrolein that binds to the surface is converted to products. Notably, carbon-carbon coupling occurs with 86% selectivity for formation of C 6 products: C 6H 8, identified as 1,3-cyclohexadiene, in a peak at 500 K and benzene immediately thereafter at 530 K. Acrolein is evolved from the surface in three peaks: a peak independent of coverage at 495 K, attributed to decomposition of an intermediate that is partly converted to C 6H 8; a coverage-dependent peak that shifts from 370 K (low coverage) to 260 K (high coverage), which is attributed to adsorption at 5-fold coordinated Ti sites; and a multilayer state at 160 K. Water and acrolein compete for 5-fold coordinated titanium sites when dosed sequentially. The addition of water also opens a new reaction pathway, leading to the hydrogenation of acrolein to form propanal. Water has no effect on the yield of 1,3-cyclohexadiene. Exposure of the surface to oxygen prior to acrolein dosing quenches the evolution of acrolein at 495 K and concurrently eliminates the coupling. From these results, we propose that reduced subsurface defects such as titanium ion interstitials play a role in the reactions observed here. The notion that subsurface defects may contribute to the reactivity of organic molecules over reducible oxide substrates may prove to be general.

Vacancy defect and defect cluster energetics in ion-implanted ZnO

Science.gov (United States)

Dong, Yufeng; Tuomisto, F.; Svensson, B. G.; Kuznetsov, A. Yu.; Brillson, Leonard J.

2010-02-01

We have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spectroscopies to determine the energy levels of Zn vacancies and vacancy clusters in bulk ZnO crystals. Doppler broadening-measured transformation of Zn vacancies to vacancy clusters with annealing shifts defect energies significantly lower in the ZnO band gap. Zn and corresponding O vacancy-related depth distributions provide a consistent explanation of depth-dependent resistivity and carrier-concentration changes induced by ion implantation.

Defect testing of large aperture optics based on high resolution CCD camera

International Nuclear Information System (INIS)

Cheng Xiaofeng; Xu Xu; Zhang Lin; He Qun; Yuan Xiaodong; Jiang Xiaodong; Zheng Wanguo

2009-01-01

A fast testing method on inspecting defects of large aperture optics was introduced. With uniform illumination by LED source at grazing incidence, the image of defects on the surface of and inside the large aperture optics could be enlarged due to scattering. The images of defects were got by high resolution CCD camera and microscope, and the approximate mathematical relation between viewing dimension and real dimension of defects was simulated. Thus the approximate real dimension and location of all defects could be calculated through the high resolution pictures. (authors)

Controlled Defects of Zinc Oxide Nanorods for Efficient Visible Light Photocatalytic Degradation of Phenol

Directory of Open Access Journals (Sweden)

Jamal Al-Sabahi

2016-03-01

Full Text Available Environmental pollution from human and industrial activities has received much attention as it adversely affects human health and bio-diversity. In this work we report efficient visible light photocatalytic degradation of phenol using supported zinc oxide (ZnO nanorods and explore the role of surface defects in ZnO on the visible light photocatalytic activity. ZnO nanorods were synthesized on glass substrates using a microwave-assisted hydrothermal process, while the surface defect states were controlled by annealing the nanorods at various temperatures and were characterized by photoluminescence and X-ray photoelectron spectroscopy. High performance liquid chromatography (HPLC was used for the evaluation of phenol photocatalytic degradation. ZnO nanorods with high surface defects exhibited maximum visible light photocatalytic activity, showing 50% degradation of 10 ppm phenol aqueous solution within 2.5 h, with a degradation rate almost four times higher than that of nanorods with lower surface defects. The mineralization process of phenol during degradation was also investigated, and it showed the evolution of different photocatalytic byproducts, such as benzoquinone, catechol, resorcinol and carboxylic acids, at different stages. The results from this study suggest that the presence of surface defects in ZnO nanorods is crucial for its efficient visible light photocatalytic activity, which is otherwise only active in the ultraviolet region.

Treatment of open tibial fracture with bone defect caused by high velocity missiles: A case report

Directory of Open Access Journals (Sweden)

Golubović Zoran

2013-01-01

Full Text Available Introduction .Tibia fracture caused by high velocity missiles is mostly comminuted and followed by bone defect which makes their healing process extremely difficult and prone to numerous complications. Case Outline. A 34-year-old male was wounded at close range by a semi-automatic gun missile. He was wounded in the distal area of the left tibia and suffered a massive defect of the bone and soft tissue. After the primary treatment of the wound, the fracture was stabilized with an external fixator type Mitkovic, with convergent orientation of the pins. The wound in the medial region of the tibia was closed with the secondary stitch, whereas the wound in the lateral area was closed with the skin transplant after Thiersch. Due to massive bone defect in the area of the rifle-missile wound six months after injury, a medical team placed a reconstructive external skeletal fixator type Mitkovic and performed corticotomy in the proximal metaphyseal area of the tibia. By the method of bone transport (distractive osteogenesis, the bone defect of the tibia was replaced. After the fracture healing seven months from the secondary surgery, the fixator was removed and the patient was referred to physical therapy. Conclusion. Surgical treatment of wounds, external fixation, performing necessary debridement, adequate antibiotic treatment and soft and bone tissue reconstruction are essential in achieving good results in patients with the open tibial fracture with bone defect caused by high velocity missiles. Reconstruction of bone defect can be successfully treated by reconstructive external fixator Mitkovic. [Projekat Ministarstva nauke Republike Srbije, br. III 41017 i br. III 41004

Separation of Cr(III) from Cr(VI) by Triton X-100 cerium(IV) phosphate as a surface active ion exchanger

International Nuclear Information System (INIS)

El-Azony, K.M.; Ismail Aydia, M.; El-Mohty, A.A.

2011-01-01

Triton X-100 cerium(IV) phosphate (TX-100CeP) was synthesized and characterized by using IR, X-ray, TGA/DT and the elemental analysis. The chemical stability of TX-100CeP versus the different concentrations of HCl acid was studied before and after its exposure to the radiation dose (30 K Gray). The effect of HCl concentration on separation of Cr(III) from Cr(VI) by using TX-100CeP as surface active ion exchanger was also studied. A novel method was achieved for the quantifying of Cr(III) and Cr(VI) ions by using the high-performance liquid chromatography (HPLC) at wavelength 650 nm, a stationary phase consists of reversed phase column (Nucleosil phenyl column; 250 x 4.6 mm, 5 μm), and a mobile phase consists of 0.001 M di-(2-ethylhexyl) phosphoric acid (DEHPA) in methanol:water (70:30 v/v). The retention times were 7.0 and 8.5 min, for the Cr(III) and Cr(VI), respectively. The exchange capacity of Cr(III) was quantified (2.1 meq/g) onto the TX-100CeP. (author)

Determining the dimension of subsurface defects by active infrared thermography – experimental research

Directory of Open Access Journals (Sweden)

S. Grys

2018-03-01

Full Text Available This paper presents research into a method of processing thermal images aimed at detecting and characterizing material defects, or non-uniformities, of the internal structure of materials. Active thermography was chosen as the NDT method. Hidden defects were revealed by analysing the temperature field of the tested material's front surface which was externally excited with heating lamps. Background removal and image segmentation were applied to the last thermogram in the sequence recorded at the end of the heating phase. The paper focuses on the quality of determining lateral dimensions of subsurface flaws in a polymethylmethacrylate slab with bottom holes drilled to imitate flaws. The following accuracy-affecting factors were taken into account: defect depth, emissivity of the inspected surface as an input, user-set parameter for the IR camera, type of filtering used to eliminate the effect of non-uniformity when heating the object surface with an external source, and global and local thresholding as a segmentation method used for defect detection and sizing.

Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices

Science.gov (United States)

Brillson, L. J.; Foster, G. M.; Cox, J.; Ruane, W. T.; Jarjour, A. B.; Gao, H.; von Wenckstern, H.; Grundmann, M.; Wang, B.; Look, D. C.; Hyland, A.; Allen, M. W.

2018-03-01

Wide-bandgap semiconductors are now leading the way to new physical phenomena and device applications at nanoscale dimensions. The impact of defects on the electronic properties of these materials increases as their size decreases, motivating new techniques to characterize and begin to control these electronic states. Leading these advances have been the semiconductors ZnO, GaN, and related materials. This paper highlights the importance of native point defects in these semiconductors and describes how a complement of spatially localized surface science and spectroscopy techniques in three dimensions can characterize, image, and begin to control these electronic states at the nanoscale. A combination of characterization techniques including depth-resolved cathodoluminescence spectroscopy, surface photovoltage spectroscopy, and hyperspectral imaging can describe the nature and distribution of defects at interfaces at both bulk and nanoscale surfaces, their metal interfaces, and inside nanostructures themselves. These features as well as temperature and mechanical strain inside wide-bandgap device structures at the nanoscale can be measured even while these devices are operating. These advanced capabilities enable several new directions for describing defects at the nanoscale, showing how they contribute to device degradation, and guiding growth processes to control them.

From HADES to PARADISE-atomistic simulation of defects in minerals

Energy Technology Data Exchange (ETDEWEB)

Parker, Stephen C; Cooke, David J; Kerisit, Sebastien; Marmier, Arnaud S; Taylor, Sarah L; Taylor, Stuart N [Department of Chemistry, University of Bath, Bath BA2 7AY (United Kingdom)

2004-07-14

The development of the HADES code by Michael Norgett in the 1970s enabled, for the first time, the routine simulation of point defects in inorganic solids at the atomic scale. Using examples from current research we illustrate how the scope and applications of atomistic simulations have widened with time and yet still follow an approach readily identifiable with this early work. Firstly we discuss the use of the Mott-Littleton methodology to study the segregation of various isovalent cations to the (00.1) and (01.2) surfaces of haematite ({alpha}-Fe{sub 2}O{sub 3}). The results show that the size of the impurities has a considerable effect on the magnitude of the segregation energy. We then extend these simulations to investigate the effect of the concentration of the impurities at the surface on the segregation process using a supercell approach. We consider next the effect of segregation to stepped surfaces illustrating this with recent work on segregation of La{sup 3+} to CaF{sub 2} surfaces, which show enhanced segregation to step edges. We discuss next the application of lattice dynamics to modelling point defects in complex oxide materials by applying this to the study of hydrogen incorporation into {beta}-Mg{sub 2}SiO{sub 4}. Finally our attention is turned to a method for considering the surface energy of physically defective surfaces and we illustrate its approach by considering the low index surfaces of {alpha}-Al{sub 2}O{sub 3}.

Manganese-incorporated iron(III) oxide-graphene magnetic nanocomposite: synthesis, characterization, and application for the arsenic(III)-sorption from aqueous solution

Energy Technology Data Exchange (ETDEWEB)

Nandi, Debabrata; Gupta, Kaushik; Ghosh, Arup Kumar [Presidency University, Department of Chemistry and Biochemistry (India); De, Amitabha [Saha Institute of Nuclear Physics, Chemical Science Division (India); Banerjee, Sangam [Saha Institute of Nuclear Physics, Surface Physics Division (India); Ghosh, Uday Chand, E-mail: ucghosh@yahoo.co.in [Presidency University, Department of Chemistry and Biochemistry (India)

2012-12-15

High specific surface area of graphene (GR) has gained special scientific attention in developing magnetic GR nanocomposite aiming to apply for the remediation of diverse environmental problems like point-of-use water purification and simultaneous separation of contaminants applying low external magnetic field (<1.0 T) from ground water. Fabrication of magnetic manganese-incorporated iron(III) oxide (Mn{sub x}{sup 2+}Fe{sub 2-x}{sup 3+}O{sub 4}{sup 2-}) (IMBO)-GR nanocomposite is reported by exfoliating the GR layers. Latest microscopic, spectroscopic, powder X-ray diffraction, BET surface area, and superconducting quantum interference device characterizations showed that the material is a magnetic nanocomposite with high specific surface area (280 m{sup 2} g{sup -1}) and pore volume (0.3362 cm{sup 3} g{sup -1}). Use of this composite for the immobilization of carcinogenic As(III) from water at 300 K and pH {approx}7.0 showed that the nanocomposite has higher binding efficiency with As(III) than the IMBO owing to its high specific surface area. The composite showed almost complete (>99.9 %) As(III) removal ({<=}10 {mu}g L{sup -1}) from water. External magnetic field of 0.3 T efficiently separated the water dispersed composite (0.01 g/10 mL) at room temperature (300 K). Thus, this composite is a promising material which can be used effectively as a potent As(III) immobilizer from the contaminated groundwater (>10 {mu}g L{sup -1}) to improve drinking water quality.

Observation of defects evolution in electronic materials

Science.gov (United States)

Jang, Jung Hun

Advanced characterization techniques have been used to obtain a better understanding of the microstructure of electronic materials. The structural evolution, especially defects, has been investigated during the film growth and post-growth processes. Obtaining the relation between the defect evolution and growth/post-growth parameters is very important to obtain highly crystalline films. In this work, the growth and post-growth related defects in GaN, ZnO, strained-Si/SiGe films have been studied using several advanced characterization techniques. First of all, the growth of related defects in GaN and p-type ZnO films have been studied. The effect of growth parameters, such as growth temperature, gas flow rate, dopants used during the deposition, on the crystalline quality of the GaN and ZnO layers was investigated by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). In GaN films, it was found that the edge and mixed type threading dislocations were the dominant defects so that the only relevant figure of merit (FOM) for the crystalline quality should be the FWHM value of o-RC of the surface perpendicular plane which could be determined by a grazing incidence x-ray diffraction (GIXD) technique as shown in this work. The understanding of the relationship between the defect evolution and growth parameters allowed for the growth of high crystalline GaN films. For ZnO films, it was found that the degree of texture and crystalline quality of P-doped ZnO films decreased with increasing the phosphorus atomic percent. In addition, the result from the x-ray diffraction line profile analysis showed that the 0.5 at % P-doped ZnO film showed much higher microstrain than the 1.0 at % P-doped ZnO film, which indicated that the phosphorus atoms were segregated with increasing P atomic percentage. Finally, post-growth related defects in strained-Si/SiGe films were investigated. Postgrowth processes used in this work included high temperature N2

Effects of local defect growth in direct-drive cryogenic implosions on OMEGA

Energy Technology Data Exchange (ETDEWEB)

Igumenshchev, I. V.; Shmayda, W. T.; Harding, D. R.; Sangster, T. C. [Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299 (United States); Goncharov, V. N. [Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299 (United States); Department of Mechanical Engineering, University of Rochester, Rochester, New York 14623 (United States); Meyerhofer, D. D. [Laboratory for Laser Energetics, University of Rochester, 250 East River Road, Rochester, New York 14623-1299 (United States); Department of Mechanical Engineering, University of Rochester, Rochester, New York 14623 (United States); Department of Physics and Astronomy, University of Rochester, Rochester, New York 14623 (United States)

2013-08-15

Spherically symmetric, low-adiabat (adiabat α ≲ 3) cryogenic direct-drive-implosion experiments on the OMEGA laser [T. R. Boehly et al., Opt. Commun. 133, 495 (1995)] yield less than 10% of the neutrons predicted in one-dimensional hydrodynamic simulations. Two-dimensional hydrodynamic simulations suggest that this performance degradation can be explained assuming perturbations from isolated defects of submicron to tens-of-micron scale on the outer surface or inside the shell of implosion targets. These defects develop during the cryogenic filling process and typically number from several tens up to hundreds for each target covering from about 0.2% to 1% of its surface. The simulations predict that such defects can significantly perturb the implosion and result in the injection of about 1 to 2 μg of the hot ablator (carbon-deuterium) and fuel (deuterium-tritium) materials from the ablation surface into the targets. Both the hot mass injection and perturbations of the shell reduce the final shell convergence ratio and implosion performance. The injected carbon ions radiatively cool the hot spot, reducing the fuel temperature, and further reducing the neutron yield. The negative effect of local defects can be minimized by decreasing the number and size of these defects and/or using more hydrodynamically stable implosion designs with higher shell adiabat.

Stereomicroscopic evaluation of dentinal defects induced by new rotary system: "ProTaper NEXT".

Science.gov (United States)

Shori, Deepa Deepak; Shenoi, Pratima Ramakrishna; Baig, Arshia R; Kubde, Rajesh; Makade, Chetana; Pandey, Swapnil

2015-01-01

The objective of this study was to evaluate dentinal defects formed by new rotary system - Protaper next™ (PTN). Sixty single-rooted premolars were selected. All specimens were decoronated and divided into four groups, each group having 15 specimens. Group I specimens were prepared by Hand K-files (Mani), Group II with ProTaper Universal (PT; Dentsply Maillefer), Group III with Hero Shaper (HS; Micro-Mega, Besancon, France), and Group IV with PTN (Dentsply Maillefer). Roots of each specimen were sectioned at 3, 6, and 9mm from the apex and were then viewed under a stereomicroscope to evaluate presence or absence of dentinal defects. In roots prepared with hand files (HFs) showed lowest percentage of dentinal defects (6.7%); whereas in roots prepared with PT, HS, and PTN it was 40, 66.7, and 26.7%, respectively. There was significant difference between the HS group and the PTN group (P hand instruments induced minimal defects.

Determination of linear defect depths from eddy currents disturbances

Science.gov (United States)

Ramos, Helena Geirinhas; Rocha, Tiago; Pasadas, Dário; Ribeiro, Artur Lopes

2014-02-01

One of the still open problems in the inspection research concerns the determination of the maximum depth to which a surface defect goes. Eddy current testing being one of the most sensitive well established inspection methods, able to detect and characterize different type of defects in conductive materials, is an adequate technique to solve this problem. This paper reports a study concerning the disturbances in the magnetic field and in the lines of current due to a machined linear defect having different depths in order to extract relevant information that allows the determination of the defect characteristics. The image of the eddy currents (EC) is paramount to understand the physical phenomena involved. The EC images for this study are generated using a commercial finite element model (FLUX). The excitation used produces a uniform magnetic field on the plate under test in the absence of defects and the disturbances due to the defects are compared with those obtained from experimental measurements. In order to increase the limited penetration depth of the method giant magnetoresistors (GMR) are used to lower the working frequency. The geometry of the excitation planar coil produces a uniform magnetic field on an area of around the GMR sensor, inducing a uniform eddy current distribution on the plate. In the presence of defects in the material surface, the lines of currents inside the material are deviated from their uniform direction and the magnetic field produced by these currents is sensed by the GMR sensor. Besides the theoretical study of the electromagnetic system, the paper describes the experiments that have been carried out to support the theory and conclusions are drawn for cracks having different depths.

Prosthetic rehabilitation of severe Siebert's Class III defect with modified Andrews bridge system

OpenAIRE

Rathee, Manu; Sikka, Neha; Jindal, Sahil; Kaushik, Ashutosh

2015-01-01

Prosthetic dentistry involves the replacement of missing and contiguous tissues with artificial substitutes to restore and maintain the oral functions, appearance, and health of the patient. The treatment of edentulous areas with ridge defects poses a challenging task for the dentist. Management of such cases involves a wide range of treatment options comprising mainly of surgical interventions and non surgical techniques such as use of removable, fixed or fixed- removable partial dentures. B...

Investigation of shinning Spot Defect on Hot-Dip Galvanized Steel Sheets

International Nuclear Information System (INIS)

Yonggang, Liu; Lei, Cui

2014-01-01

Shinning spot defects on galvanized steel sheets were studied by optical microscope, scanning electron microscope(SEM), Energy Dispersive Spectrometer (EDS) and Laser-Induced Breakdown Spectroscopy Original Position Statistic Distribution Analysis (LIBSOPA) in this study. The research shows that the coating thickness of shinning spot defects which caused by the substrate defect is much lower than normal area, and when skin passed, the shinning spot defect area can not touch with skin pass roll which result in the surface of shinning spot is flat while normal area is rough. The different coating morphologies have different effects on the reflection of light, which cause the shinning spot defects more brighter than normal area

Simulation of surface crack initiation induced by slip localization and point defects kinetics

International Nuclear Information System (INIS)

Sauzay, Maxime; Liu, Jia; Rachdi, Fatima

2014-01-01

Crack initiation along surface persistent slip bands (PSBs) has been widely observed and modelled. Nevertheless, from our knowledge, no physically-based fracture modelling has been proposed and validated with respect to the numerous recent experimental data showing the strong relationship between extrusion and microcrack initiation. The whole FE modelling accounts for: - localized plastic slip in PSBs; - production and annihilation of vacancies induced by cyclic slip. If temperature is high enough, point defects may diffuse in the surrounding matrix due to large concentration gradients, allowing continuous extrusion growth in agreement with Polak's model. At each cycle, the additional atoms diffusing from the matrix are taken into account by imposing an incremental free dilatation; - brittle fracture at the interfaces between PSBs and their surrounding matrix which is simulated using cohesive zone modelling. Any inverse fitting of parameter is avoided. Only experimental single crystal data are used such as hysteresis loops and resistivity values. Two fracture parameters are required: the {111} surface energy which depends on environment and the cleavage stress which is predicted by the universal binding energy relationship. The predicted extrusion growth curves agree rather well with the experimental data published for copper and the 316L steel. A linear dependence with respect to PSB length, thickness and slip plane angle is predicted in agreement with recent AFM measurement results. Crack initiation simulations predict fairly well the effects of PSB length and environment for copper single and poly-crystals. (authors)

A molecular dynamics simulation study of irradiation induced defects in gold nanowire

Science.gov (United States)

Liu, Wenqiang; Chen, Piheng; Qiu, Ruizhi; Khan, Maaz; Liu, Jie; Hou, Mingdong; Duan, Jinglai

2017-08-01

Displacement cascade in gold nanowires was studied using molecular dynamics computer simulations. Primary knock-on atoms (PKAs) with different kinetic energies were initiated either at the surface or at the center of the nanowires. We found three kinds of defects that were induced by the cascade, including point defects, stacking faults and crater at the surface. The starting points of PKAs influence the number of residual point defects, and this consequently affect the boundary of anti-radiation window which was proposed by calculation of diffusion of point defects to the free surface of nanowires. Formation of stacking faults that expanded the whole cross-section of gold nanowires was observed when the PKA's kinetic energy was higher than 5 keV. Increasing the PKA's kinetic energy up to more than 10 keV may lead to the formation of crater at the surface of nanowires due to microexplosion of hot atoms. At this energy, PKAs started from the center of nanowires can also result in the creation of crater because length of cascade region is comparable to diameter of nanowires. Both the two factors, namely initial positions of PKAs as well as the craters induced by higher energy irradiation, would influence the ability of radiation resistance of metal nanowires.

Manganese-incorporated iron(III) oxide–graphene magnetic nanocomposite: synthesis, characterization, and application for the arsenic(III)-sorption from aqueous solution