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Sample records for surface etching occurs

  1. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

    Science.gov (United States)

    Nakazaki, Nobuya; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-12-01

    Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy Ei, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on Ei: one is the roughening mode at low Ei rms) roughness of etched surfaces increases with increasing Ei, exhibiting an almost linear increase with time during etching (t rms surface roughness decreases substantially with Ei down to a low level etch rate versus √{Ei } curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing Ei were found to correspond to changes in the predominant ion flux from feed gas ions Clx+ to ionized etch products SiClx+ caused by the increased etch rates at increased Ei, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.

  2. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

    OpenAIRE

    Nakazaki, Nobuya; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-01-01

    Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl{2} plasmas, as a function of rf bias power or ion incident energy E{i} , by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on E{i} : one is the roughening mode at low E{i}  

  3. Low surface damage dry etched black silicon

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt

    2017-01-01

    Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface...... power, during reactive ion etching at non-cryogenic temperature (-20°C), preserves the reflectivity below 1% and improves the effective minority carrier lifetime due to reduced ion energy. We investigate the effect of the etching process on the surface morphology, light trapping, reflectance......, transmittance, and effective lifetime of bSi. Additional surface passivation using atomic layer deposition of Al2O3 significantly improves the effective lifetime. For n-type wafers, the lifetime reaches 12 ms for polished and 7.5 ms for bSi surfaces. For p-type wafers, the lifetime reaches 800 ls for both...

  4. Copper-assisted, anti-reflection etching of silicon surfaces

    Science.gov (United States)

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  5. Low surface damage dry etched black silicon

    Science.gov (United States)

    Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt; Lindhard, Jonas Michael; Hirsch, Jens; Lausch, Dominik; Schmidt, Michael Stenbæk; Stamate, Eugen; Hansen, Ole

    2017-10-01

    Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface damage that causes significant recombination. Here, we present a process optimization strategy for bSi, where surface damage is reduced and surface passivation is improved while excellent light trapping and low reflectance are maintained. We demonstrate that reduction of the capacitively coupled plasma power, during reactive ion etching at non-cryogenic temperature (-20 °C), preserves the reflectivity below 1% and improves the effective minority carrier lifetime due to reduced ion energy. We investigate the effect of the etching process on the surface morphology, light trapping, reflectance, transmittance, and effective lifetime of bSi. Additional surface passivation using atomic layer deposition of Al2O3 significantly improves the effective lifetime. For n-type wafers, the lifetime reaches 12 ms for polished and 7.5 ms for bSi surfaces. For p-type wafers, the lifetime reaches 800 μs for both polished and bSi surfaces.

  6. Surface engineering of SiC via sublimation etching

    International Nuclear Information System (INIS)

    Jokubavicius, Valdas; Yazdi, Gholam R.; Ivanov, Ivan G.; Niu, Yuran; Zakharov, Alexei; Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa

    2016-01-01

    Highlights: • Comparison of 6H-, 4H- and 3C-SiC sublimation etching. • Effects of Si-C and Si-C-Ta chemical systems on etching mechanisms. • Effect of etching ambient on surface reconstruction. • Application of etched 4H-SiC surface for the growth of graphene nanoribbons is illustrated. - Abstract: We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10 −5 mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  7. Surface engineering of SiC via sublimation etching

    Energy Technology Data Exchange (ETDEWEB)

    Jokubavicius, Valdas, E-mail: valjo@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden); Yazdi, Gholam R.; Ivanov, Ivan G. [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden); Niu, Yuran; Zakharov, Alexei [Max Lab, Lund University, S-22100 Lund (Sweden); Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden)

    2016-12-30

    Highlights: • Comparison of 6H-, 4H- and 3C-SiC sublimation etching. • Effects of Si-C and Si-C-Ta chemical systems on etching mechanisms. • Effect of etching ambient on surface reconstruction. • Application of etched 4H-SiC surface for the growth of graphene nanoribbons is illustrated. - Abstract: We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10{sup −5} mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  8. Micropatterning on cylindrical surfaces via electrochemical etching using laser masking

    International Nuclear Information System (INIS)

    Cho, Chull Hee; Shin, Hong Shik; Chu, Chong Nam

    2014-01-01

    Highlights: • Various micropatterns were fabricated on the cylindrical surface of a stainless steel shaft. • Selective electrochemical dissolution was achieved via a series process of laser masking and electrochemical etching. • Laser masking characteristics on the non-planar surface were investigated. • A uniform mask layer was formed on the cylindrical surface via synchronized laser line scanning with a rotary system. • The characteristics of electrochemical etching on the non-planar surface were investigated. - Abstract: This paper proposes a method of selective electrochemical dissolution on the cylindrical surfaces of stainless steel shafts. Selective electrochemical dissolution was achieved via electrochemical etching using laser masking. A micropatterned recast layer was formed on the surface via ytterbium-doped pulsed fiber laser irradiation. The micropatterned recast layer could be used as a mask layer during the electrochemical etching process. Laser masking condition to form adequate mask layer on the planar surface for etching cannot be used directly on the non-planar surface. Laser masking condition changes depending on the morphological surface. The laser masking characteristics were investigated in order to form a uniform mask layer on the cylindrical surface. To minimize factors causing non-uniformity in the mask layer on the cylindrical surface, synchronized laser line scanning with a rotary system was applied during the laser masking process. Electrochemical etching characteristics were also investigated to achieve deeper etched depth, without collapsing the recast layer. Consequently, through a series process of laser masking and electrochemical etching, various micropatternings were successfully performed on the cylindrical surfaces

  9. Investigation of surface roughness on etched glass surfaces

    International Nuclear Information System (INIS)

    Papa, Z.; Budai, J.; Farkas, B.; Toth, Z.

    2011-01-01

    Roughening the surface of solar cells is a common practice within the photovoltaic industry as it reduces reflectance, and thus enhances the performance of devices. In this work the relationship between reflectance characterized by the haze parameter, surface roughness and optical properties was investigated. To achieve this goal, model samples were prepared by hydrofluoric acid etching of glass for various times and measured by optical microscopy, spectroscopic ellipsometry, scanning electron microscopy, and atomic force microscopy. Our investigation showed that the surface reflectance was decreased not only by the roughening of the surface but also by the modification of the depth profile and lowering of the refractive index of the surface domain of the samples.

  10. The synthesis of flexible zeolite nanofibers by a polymer surface thermal etching process

    Science.gov (United States)

    Ji, Sang Hyun; Cho, Jeong Ho; Jeong, Young Hun; Yun, Jon Do; Yun, Ji Sun

    2017-09-01

    Flexible zeolite nanofibers with high surface area were synthesized by an electrospinning method and a thermal surface partial etching process. The thermal surface partial etching temperature range for maintaining flexibility of zeolite nanofibers was investigated based on thermogravimetric analysis (TGA), and the as-spun zeolite nanofibers were thermal etched at a temperature range from 250 °C to 450 °C. Field emission scanning electron microscope (FE-SEM) and atomic force microscope (AFM) images clearly showed that the polymer surface of the nanofibers was partially etched, and zeolite particles were exposed on the surface of the nanofibers. X-ray diffraction (XRD) results confirmed that a phase change did not occur in the zeolite nanofibers with a thermal etching process. The specific surface area characteristics were analyzed by N2 adsorption/desorption isotherms, and the thermal surface etched zeolite nanofibers at 400 °C had a specific surface area of 816 m2/g similar to the value of zeolite powders.

  11. Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Miao-Rong [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China); University of Chinese Academy of Sciences, 100049 Beijing (China); Hou, Fei; Wang, Zu-Gang; Zhang, Shao-Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China); Changchun University of Science and Technology, 130022 Changchun (China); Pan, Ge-Bo, E-mail: gbpan2008@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China)

    2017-07-15

    Graphical abstract: GaN surface was etched by 0.3 M EDTA-2Na. The proposed complexation dissolution mechanism can be applicable to almost all neutral etchants under the prerequisite of strong light and electric field. - Highlights: • GaN surface was etched by EDTA-2Na. • GaN may be dissolved into EDTA-2Na by forming Ga–EDTA complex. • We propose the complexation dissolution mechanism for the first time. - Abstract: Gallium nitride (GaN) surface was etched by 0.3 M ethylenediamine tetraacetic acid disodium (EDTA-2Na) via photoelectrochemical etching technique. SEM images reveal the etched GaN surface becomes rough and irregular. The pore density is up to 1.9 × 10{sup 9} per square centimeter after simple acid post-treatment. The difference of XPS spectra of Ga 3d, N 1s and O 1s between the non-etched and freshly etched GaN surfaces can be attributed to the formation of Ga–EDTA complex at the etching interface between GaN and EDTA-2Na. The proposed complexation dissolution mechanism can be broadly applicable to almost all neutral etchants under the prerequisite of strong light and electric field. From the point of view of environment, safety and energy, EDTA-2Na has obvious advantages over conventionally corrosive etchants. Moreover, as the further and deeper study of such nearly neutral etchants, GaN etching technology has better application prospect in photoelectric micro-device fabrication.

  12. Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism

    International Nuclear Information System (INIS)

    Zhang, Miao-Rong; Hou, Fei; Wang, Zu-Gang; Zhang, Shao-Hui; Pan, Ge-Bo

    2017-01-01

    Graphical abstract: GaN surface was etched by 0.3 M EDTA-2Na. The proposed complexation dissolution mechanism can be applicable to almost all neutral etchants under the prerequisite of strong light and electric field. - Highlights: • GaN surface was etched by EDTA-2Na. • GaN may be dissolved into EDTA-2Na by forming Ga–EDTA complex. • We propose the complexation dissolution mechanism for the first time. - Abstract: Gallium nitride (GaN) surface was etched by 0.3 M ethylenediamine tetraacetic acid disodium (EDTA-2Na) via photoelectrochemical etching technique. SEM images reveal the etched GaN surface becomes rough and irregular. The pore density is up to 1.9 × 10 9 per square centimeter after simple acid post-treatment. The difference of XPS spectra of Ga 3d, N 1s and O 1s between the non-etched and freshly etched GaN surfaces can be attributed to the formation of Ga–EDTA complex at the etching interface between GaN and EDTA-2Na. The proposed complexation dissolution mechanism can be broadly applicable to almost all neutral etchants under the prerequisite of strong light and electric field. From the point of view of environment, safety and energy, EDTA-2Na has obvious advantages over conventionally corrosive etchants. Moreover, as the further and deeper study of such nearly neutral etchants, GaN etching technology has better application prospect in photoelectric micro-device fabrication.

  13. Dry Etching of Copper Phthalocyanine Thin Films: Effects on Morphology and Surface Stoichiometry

    Directory of Open Access Journals (Sweden)

    Michael J. Brett

    2012-08-01

    Full Text Available We investigate the evolution of copper phthalocyanine thin films as they are etched with argon plasma. Significant morphological changes occur as a result of the ion bombardment; a planar surface quickly becomes an array of nanopillars which are less than 20 nm in diameter. The changes in morphology are independent of plasma power, which controls the etch rate only. Analysis by X-ray photoelectron spectroscopy shows that surface concentrations of copper and oxygen increase with etch time, while carbon and nitrogen are depleted. Despite these changes in surface stoichiometry, we observe no effect on the work function. The absorbance and X-ray diffraction spectra show no changes other than the peaks diminishing with etch time. These findings have important implications for organic photovoltaic devices which seek nanopillar thin films of metal phthalocyanine materials as an optimal structure.

  14. Effect of surface etching and electrodeposition of copper on nitinol

    Science.gov (United States)

    Ramos-Moore, E.; Rosenkranz, A.; Matamala, L. F.; Videla, A.; Durán, A.; Ramos-Grez, J.

    2017-10-01

    Nitinol-based materials are very promising for medical and dental applications since those materials can combine shape memory, corrosion resistance, biocompatibility and antibacterial properties. In particular, surface modifications and coating deposition can be used to tailor and to unify those properties. We report preliminary results on the study of the effect of surface etching and electrodeposition of Copper on Nitinol using optical, chemical and thermal techniques. The results show that surface etching enhances the surface roughness of Nitinol, induces the formation of Copper-based compounds at the Nitinol-Copper interface, reduces the austenitic-martensitic transformations enthalpies and reduces the Copper coating roughness. Further studies are needed in order to highlight the influence of the electrodeposited Copper on the memory shape properties of NiTi.

  15. Superhydrophobic coatings for aluminium surfaces synthesized by chemical etching process

    Directory of Open Access Journals (Sweden)

    Priya Varshney

    2016-10-01

    Full Text Available In this paper, the superhydrophobic coatings on aluminium surfaces were prepared by two-step (chemical etching followed by coating and one-step (chemical etching and coating in a single step processes using potassium hydroxide and lauric acid. Besides, surface immersion time in solutions was varied in both processes. Wettability and surface morphologies of treated aluminium surfaces were characterized using contact angle measurement technique and scanning electron microscopy, respectively. Microstructures are formed on the treated aluminium surfaces which lead to increase in contact angle of the surface (>150°. Also on increasing immersion time, contact angle further increases due to increase in size and depth of microstructures. Additionally, these superhydrophobic coatings show excellent self-cleaning and corrosion-resistant behavior. Water jet impact, floatation on water surface, and low temperature condensation tests assert the excellent water-repellent nature of coatings. Further, coatings are to be found mechanically, thermally, and ultraviolet stable. Along with, these coatings are found to be excellent regeneration ability as verified experimentally. Although aforesaid both processes generate durable and regenerable superhydrophobic aluminium surfaces with excellent self-cleaning, corrosion-resistant, and water-repellent characteristics, but one-step process is proved more efficient and less time consuming than two-step process and promises to produce superhydrophobic coatings for industrial applications.

  16. Etching of GaAs substrates to create As-rich surface

    Indian Academy of Sciences (India)

    WINTEC

    All the procedures except HCl solution. (1 : 1) produce an As-rich surface. Also, none of the etchants except HF–ethanol solution produce Ga or As- rich (oxide free) surfaces. Optical microscopic study shows different etch pits produced due to etching in different solutions. Keywords. Etching; semi-insulating; XPS spectrum.

  17. Oxidation and etching behaviors of the InAs surface in various acidic and basic chemical solutions

    Science.gov (United States)

    Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo

    2017-04-01

    Indium arsenide (InAs) is the candidate of choice as a new channel material for application in future technologies beyond the Si-based electronic devices because it has a much higher electron mobility than silicon. In this study, the oxidation and etching behaviors of InAs (100) in various acidic and basic solutions, such as HF, HCl, H2SO4, NaOH, KOH, and NH4OH, were investigated. In addition, the effect of pH on the oxidation and etching reactions taking place on the InAs surface was studied using solutions with a pH ranging from 1 to 13. It was observed that the oxidation of the InAs surface was hindered in acidic solutions, which was attributed to the dissolution of the oxidized surface layer. In particular, the treatment of the InAs surface using a strongly acidic solution with a pH of less than 3 produced an oxide-free surface due to the predominant etching of the InAs surface. The addition of H2O2 to the acidic solutions greatly increased the etching rate of the InAs surface, which suggests that the oxidation process is the rate-limiting step in the sequence of reactions that occur during the etching of the InAs surface in acidic solutions. The etching of InAs was suppressed in neutral solutions, which resulted in the formation of a relatively thicker oxide layer on the surface, and mild etching of the InAs surface took place in basic solutions. However, in basic solutions, the addition of H2O2 did not significantly contribute to the increase of the oxidation state of the InAs surface; thus, its effect on the etching rate of InAs was smaller than in acidic solutions.

  18. The electronic structure of anodized and etched aluminum alloy surfaces

    Science.gov (United States)

    Mullins, W. M.; Averbach, B. L.

    1988-11-01

    Specimens of 6061 and 5052 aluminum alloys which had been anodized and etched by several commonly used procedures were examined by means of bias-reference X-ray photoelectron spectroscopy (XPS). The spectra were compared with those obtained from single crystals of pure aluminum oxides. The chemical shifts observed from the A12p surface oxide lines were interpreted as differences in the Fermi energy levels relative to those in the bulk oxide crystals, and the Fermi energy levels of the surface oxides were thus determined. Using an earlier experimental correlation obtained for values of the point of zero charge (pzc) with Fermi energy levels in aluminum oxide powders, a value of the pzc of the surface oxide was then determined. The surface exhibited the maximum alkalinity, pzc = 8.9, after a caustic etch, and the maximum acidity, pzc = 3.6, after a phosphoric acid anodizing treatment. The significance of these pzc values in the adhesive bonding of aluminum alloys is discussed.

  19. The Effect of Phosphoric Acid Pre-etching Times on Bonding Performance and Surface Free Energy with Single-step Self-etch Adhesives.

    Science.gov (United States)

    Tsujimoto, A; Barkmeier, W W; Takamizawa, T; Latta, M A; Miyazaki, M

    2016-01-01

    The purpose of this study was to evaluate the effect of phosphoric acid pre-etching times on shear bond strength (SBS) and surface free energy (SFE) with single-step self-etch adhesives. The three single-step self-etch adhesives used were: 1) Scotchbond Universal Adhesive (3M ESPE), 2) Clearfil tri-S Bond (Kuraray Noritake Dental), and 3) G-Bond Plus (GC). Two no pre-etching groups, 1) untreated enamel and 2) enamel surfaces after ultrasonic cleaning with distilled water for 30 seconds to remove the smear layer, were prepared. There were four pre-etching groups: 1) enamel surfaces were pre-etched with phosphoric acid (Etchant, 3M ESPE) for 3 seconds, 2) enamel surfaces were pre-etched for 5 seconds, 3) enamel surfaces were pre-etched for 10 seconds, and 4) enamel surfaces were pre-etched for 15 seconds. Resin composite was bonded to the treated enamel surface to determine SBS. The SFEs of treated enamel surfaces were determined by measuring the contact angles of three test liquids. Scanning electron microscopy was used to examine the enamel surfaces and enamel-adhesive interface. The specimens with phosphoric acid pre-etching showed significantly higher SBS and SFEs than the specimens without phosphoric acid pre-etching regardless of the adhesive system used. SBS and SFEs did not increase for phosphoric acid pre-etching times over 3 seconds. There were no significant differences in SBS and SFEs between the specimens with and without a smear layer. The data suggest that phosphoric acid pre-etching of ground enamel improves the bonding performance of single-step self-etch adhesives, but these bonding properties do not increase for phosphoric acid pre-etching times over 3 seconds.

  20. Polymer masks for structured surface and plasma etching

    International Nuclear Information System (INIS)

    Vital, Alexane; Vayer, Marylène; Sinturel, Christophe; Tillocher, Thomas; Lefaucheux, Philippe; Dussart, Rémi

    2015-01-01

    Graphical abstract: - Highlights: • Sub-micrometric silicon structures were prepared by cryogenic plasma etching. • Polymer templates based on phase-separated films of PS/PLA were used. • Silica structured masks were prepared by filling the polymer templates. • Etching of underlying silicon through silica templates gave original structures. - Abstract: Silica and silicon structures have been prepared at the sub-micrometer length-scale, using laterally phase-separated thin films of poly(styrene) (PS) and poly(lactic acid) (PLA) homopolymer blends. The selective removal of one polymer and the filling of the released space by silica precursor solution led, after calcination, to silica structures on silicon such as arrays of bowl-shape features or pillars, layers with through or non-through cylindrical holes, which has not been observed for some of them. The control of the morphology of the initial polymer film was a key point to achieve such type of structures. Particularly relevant was the use of solvent vapor annealing (vs thermal annealing) of the initial spin-coated films that favored and stabilized laterally phase-separated morphologies. Characteristic dimension of the domains were shown to be coupled with the thickness of the film, thinner films giving smaller domain sizes. Despite a relatively high incompatibility of the two polymers, a macro-phase separation was prevented in all the studied conditions. Sub-micrometric domains were formed, and for the thinner films, nanometric domains as small as 74 nm in size can be obtained. The silica structures formed by the infiltration of the polymer templates were used as hard masks for the cryogenic etching of underlying silicon. New structured surfaces, arrays of silicon pillars which can be plain or hollow at the upper part or arrays of cylindrical holes were formed. A selectivity as high as 21 was obtained using this type of mask for 1.5 μm deep holes having a typical diameter of 200 nm

  1. Changes of the surface composition of glass during reactive and argon ion etching

    International Nuclear Information System (INIS)

    Jech, C.; Bastl, Z.

    1983-01-01

    Removal of a radioactive implant ( 212 Pb + 212 Bi) from the glass surface was measured during reactive (CF 4 ) and argon ion etching and accompanying changes in the surface composition were determined using ESCA. During reactive etch in CF 4 the formation of fluoride (Na, Ca, Mg) surface layer was observed. High etching rate at low pressure of CF 4 can be explained by the combined action of the reactive etch of the silica component and RF sputtering of the residual non-volatile fluorides. (author)

  2. Problems of surface morphology and layer deposition during plasma etching processes. 2

    International Nuclear Information System (INIS)

    Tiller, H.-J.; Krausse, J.; Voigt, R.

    1982-01-01

    The plasma etching of Si in CF 4 -, CF 4 /O 2 - and CF 4 /H 2 plasmas was investigated in dependence on the etching gas, the plasma conditions (pressure, power density) and etching time in different reactors. A roughening of the surface and the formation of a 'semi-amorphous' surface layer with a powder-like morphology was detected by TEM-and RHEED methods. It is supposed that the surface layer has a fundamental consequence as an intermediate state in the etching mechanism. (author)

  3. A 5-year prospective multicenter study of early loaded titanium implants with a sandblasted and acid-etched surface

    NARCIS (Netherlands)

    Cochran, D.L.; Jackson, J.M.; Bernard, J.P.; ten Bruggenkate, C.M.; Buser, D.; Taylor, T.D.; Weingart, D.; Schoolfield, J.D.; Jones, A.A.; Oates, T.W

    2011-01-01

    PURPOSE: For dental implants to be successful, osseointegration must occur, but it is unknown how much time must pass for osseointegration to be established. Preclinical studies suggested that titanium implants with a sandblasted and acid-etched (SLA) surface were more osteoconductive and allowed

  4. Preliminary surface analysis of etched, bleached, and normal bovine enamel

    International Nuclear Information System (INIS)

    Ruse, N.D.; Smith, D.C.; Torneck, C.D.; Titley, K.C.

    1990-01-01

    X-ray photoelectron spectroscopic (XPS) and secondary ion-mass spectroscopic (SIMS) analyses were performed on unground un-pumiced, unground pumiced, and ground labial enamel surfaces of young bovine incisors exposed to four different treatments: (1) immersion in 35% H2O2 for 60 min; (2) immersion in 37% H3PO4 for 60 s; (3) immersion in 35% H2O2 for 60 min, in distilled water for two min, and in 37% H3PO4 for 60 s; (4) immersion in 37% H3PO4 for 60 s, in distilled water for two min, and in 35% H2O2 for 60 min. Untreated unground un-pumiced, unground pumiced, and ground enamel surfaces, as well as synthetic hydroxyapatite surfaces, served as controls for intra-tooth evaluations of the effects of different treatments. The analyses indicated that exposure to 35% H2O2 alone, besides increasing the nitrogen content, produced no other significant change in the elemental composition of any of the enamel surfaces investigated. Exposure to 37% H3PO4, however, produced a marked decrease in calcium (Ca) and phosphorus (P) concentrations and an increase in carbon (C) and nitrogen (N) concentrations in unground un-pumiced specimens only, and a decrease in C concentration in ground specimens. These results suggest that the reported decrease in the adhesive bond strength of resin to 35% H2O2-treated enamel is not caused by a change in the elemental composition of treated enamel surfaces. They also suggest that an organic-rich layer, unaffected by acid-etching, may be present on the unground un-pumiced surface of young bovine incisors. This layer can be removed by thorough pumicing or by grinding. An awareness of its presence is important when young bovine teeth are used in a model system for evaluation of resin adhesiveness

  5. Reactive-ion etching of nylon fabric meshes using oxygen plasma for creating surface nanostructures

    International Nuclear Information System (INIS)

    Salapare, Hernando S.; Darmanin, Thierry; Guittard, Frédéric

    2015-01-01

    Graphical abstract: - Highlights: • Reactive-ion etching (RIE) is employed to nylon 6,6 fabrics to achieve surface texturing and improved wettability. • FTIR spectra of the treated samples exhibited decreased transmittance of amide and carboxylic acid groups due to etching. • Etching is enhanced for higher power plasma treatments and for samples with larger mesh sizes. • Decreased crystallinity was achieved after plasma treatment. • Higher power induced higher negative DC self-bias voltage on the samples that favored anisotropic and aggressive etching. - Abstract: A facile one-step oxygen plasma irradiation in reactive ion etching (RIE) configuration is employed to nylon 6,6 fabrics with different mesh sizes to achieve surface nanostructures and improved wettability for textile and filtration applications. To observe the effects of power and irradiation time on the samples, the experiments were performed using constant irradiation time in varying power and using constant power in varying irradiation times. Results showed improved wettability after the plasma treatment. The FTIR spectra of all the treated samples exhibited decreased transmittance of the amide and carboxylic acid groups due to surface etching. The changes in the surface chemistry are supported by the SEM data wherein etching and surface nanostructures were observed for the plasma-treated samples. The etching of the surfaces is enhanced for higher power plasma treatments. The thermal analysis showed that the plasma treatment resulted in decreased crystallinity. Surface chemistry showed that the effects of the plasma treatment on the samples have no significant difference for all the mesh sizes. However, surface morphology showed that the sizes of the surface cracks are the same for all the mesh sizes but samples with larger mesh sizes exhibited enhanced etching as compared to the samples with smaller mesh sizes. Higher power induced higher negative DC self-bias voltage on the samples that

  6. Evaluation of Acid Etching on Surface Characteristics, Strength and Biological Response of Glass-Infiltrated Zirconia.

    Science.gov (United States)

    Vu, Van Thi; Oh, Gye-Jeong; Lim, Hyun-Pil; Yun, Kwi-Dug; Kim, Ji-Won; Park, Sang-Won

    2018-03-01

    This study evaluated the effect of acid etching on surface characteristics, flexural strength and osteoblast cell response of glass-infiltrated zirconia. Zirconia specimens were divided into six groups: untreated zirconia (Z); glass-infiltrated zirconia (ZG); glass-infiltrated and sandblasted zirconia (ZGS); glass-infiltrated, sandblasted and 5 min acid-etched zirconia (ZGS-E5); glassinfiltrated, sandblasted and 15 min acid-etched zirconia (ZGS-E15); glass-infiltrated, sandblasted and 25 min acid-etched zirconia (ZGS-E25). Surface roughness, biaxial flexural strength and MC3T3-E1 cell proliferation were evaluated. When increasing etching time, surface roughness significantly increased while flexural strength decreased. Cell proliferation rate at day 3 on group ZGS-E15 and ZGS-E25 was significantly higher than that of other groups. Surface roughness and flexural strength of glass-infiltrated zirconia can be controlled by adjusting etching time. Rough surface made by acid etching following glass infiltration significantly enhanced osteoblast cell response. Glass infiltration improved strength of zirconia but severe acid etching slightly reduced strength of zirconia.

  7. Improvement of surface roughness in silicon-on-insulator wafer fabrication using a neutral beam etching

    Science.gov (United States)

    Min, T. H.; Park, B. J.; Kang, S. K.; Gweon, G. H.; Kim, Y. Y.; Yeom, G. Y.

    2009-08-01

    Silicon-on-insulator (SOI) wafers were etched by an energetic chlorine neutral beam obtained by the low-angle forward reflection of an ion beam, and the surface roughness of the etched wafers was compared with that of the SOI wafers etched by an energetic chlorine ion beam. When the ion beam was used to etch the silicon layer of the SOI wafers, the surface roughness was not significantly changed even though the use of higher ion bombardment energy slightly decreased the surface roughness of the SOI wafer. However, when the chlorine neutral beam was used instead of the chlorine ion beam having a similar beam energy, the surface roughness of the SOI wafer was significantly improved compared with that etched by the chlorine ion beam. By etching about 150 nm silicon from the SOI wafer having a 300 nm-thick top silicon layer with the chlorine neutral beam at the energy of 500 eV, the rms surface roughness of 1.5 Å could be obtained with the etch rate of about 750 Å min-1.

  8. Effects of different sulfuric acid etching concentrations on PEEK surface bonding to resin composite.

    Science.gov (United States)

    Chaijareenont, Pisaisit; Prakhamsai, Sasiprapha; Silthampitag, Patcharawan; Takahashi, Hidekazu; Arksornnukit, Mansuang

    2018-01-26

    This study evaluated the effects of surface pretreatment with different concentrations of sulfuric acid etching on surface properties and bonding between Polyetheretherketone (PEEK) and a resin composite. Six groups of surface pretreatment (no pretreatment, etched with 70, 80, 85, 90, and 98% sulfuric acid for 60 s) were treated on PEEK. Surface roughness, scanning electron microscopy (SEM) and atomic force microscopy (AFM) analyses were examined. Shear bond strength (SBS) and cross-sectional observations of the interfaces were performed. One-way ANOVA analysis revealed differences in surface roughness and SBS between groups. The 90 and 98% sulfuric acid etching significantly achieved the highest SBS (psulfuric acid etching were suggested to be the optimal concentration to improve adhesion between PEEK and the resin composite.

  9. Characterization of etch pit formation via the Everson-etching method on CdZnTe crystal surfaces from the bulk to the nanoscale

    International Nuclear Information System (INIS)

    Teague, Lucile C.; Duff, Martine C.; Cadieux, James R.; Soundararajan, Raji; Shick, Charles R.; Lynn, Kelvin G.

    2011-01-01

    A combination of atomic force microscopy, optical microscopy, and mass spectrometry was employed to study CdZnTe crystal surface and used etchant solution following exposure of the CdZnTe crystal to the Everson etch solution. We discuss the results of these studies in relationship to the initial surface preparation methods, the performance of the crystals as radiation spectrometers, the observed etch pit densities, and the chemical mechanism of surface etching. Our results show that the surface features that are exposed to etchants result from interactions with the chemical components of the etchants as well as pre-existing mechanical polishing.

  10. Surface roughening and rippling during plasma etching of silicon: Numerical investigations and a comparison with experiments

    OpenAIRE

    Tsuda, Hirotaka; Nakazaki, Nobuya; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-01-01

    Atomic- or nanometer-scale surface roughening and rippling during Si etching in high-density Cl2 and Cl2/O2 plasmas have been investigated by developing a three-dimensional atomic-scale cellular model (ASCeM-3D), which is a 3D Monte Carlo-based simulation model for plasma-surface interactions and the feature profile evolution during plasma etching. The model took into account the behavior of Cl+ ions, Cl and O neutrals, and etch products and byproducts of SiClx and SiClxOy in microstructures ...

  11. Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation

    Energy Technology Data Exchange (ETDEWEB)

    Aureau, D., E-mail: damien.aureau@chimie.uvsq.fr [Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis, Versailles, 78035 (France); Chaghi, R.; Gerard, I. [Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis, Versailles, 78035 (France); Sik, H.; Fleury, J. [Sagem Defense Sécurité, 72-74, rue de la tour Billy, 95101, Argenteuil Cedex (France); Etcheberry, A. [Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis, Versailles, 78035 (France)

    2013-07-01

    This paper investigates the wet etching of InSb surfaces by two different oxidant agents: Br{sub 2} and H{sub 2}O{sub 2} and the consecutive oxides generation onto the surfaces. The strong dependence between the chemical composition of the etching baths and the nature of the final surface chemistry of this low band-gap III–V semiconductor will be especially highlighted. One aqueous etching solution combined hydrobromic acid and Bromine (HBr–Br{sub 2}:H{sub 2}O) with adjusted concentrations. The other solution combines orthophosphoric and citric acids with hydrogen peroxide (H{sub 3}PO{sub 4}–H{sub 2}O{sub 2}:H{sub 2}O). Depending on its composition, each formulation gave rise to variable etching rate. The dosage of Indium traces in the etching solution by atomic absorption spectroscopy (AAS) gives the kinetic variation of the dissolution process. The variations on etching rates are associated to the properties and the nature of the formed oxides on InSb surfaces. Surface characterization is specifically performed by X-ray photoelectron spectroscopy (XPS). A clear evidence of the differences between the formed oxides is highlighted. Atomic force microscopy is used to monitor the surface morphology and pointed out that very different final morphologies can be reached. This paper presents new results on the strong variability of the InSb oxides in relation with the InSb reactivity toward environment interaction.

  12. Improved thrombogenicity on oxygen etched Ti6Al4V surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Riedel, Nicholas A. [Department of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); Smith, Barbara S. [School of Biomedical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); Williams, John D. [Department of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); Popat, Ketul C., E-mail: ketul.popat@colostate.edu [Department of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); School of Biomedical Engineering, Colorado State University, Fort Collins, CO 80523 (United States)

    2012-07-01

    Thrombus formation on blood contacting biomaterials continues to be a key factor in initiating a critical mode of failure in implantable devices, requiring immediate attention. In the interest of evaluating a solution for one of the most widely used biomaterials, titanium and its alloys, this study focuses on the use of a novel surface oxidation treatment to improve the blood compatibility. This study examines the possibility of using oblique angle ion etching to produce a high quality oxide layer that enhances blood compatibility on medical grade titanium alloy Ti6Al4V. An X-ray photoelectron spectroscopy (XPS) analysis of these oxygen-rich surfaces confirmed the presence of TiO{sub 2} peaks and also indicated increased surface oxidation as well as a reduction in surface defects. After 2 h of contact with whole human plasma, the oxygen etched substrates demonstrated a reduction in both platelet adhesion and activation as compared to bare titanium substrates. The whole blood clotting behavior was evaluated for up to 45 min, showing a significant decrease in clot formation on oxygen etched substrates. Finally, a bicinchoninic acid (BCA) total protein assay and XPS were used to evaluate the degree of key blood serum protein (fibrinogen, albumin, immunoglobulin G) adsorption on the substrates. The results showed similar protein levels for both the oxygen etched and control substrates. These results indicate that oblique angle oxygen etching may be a promising method to increase the thrombogenicity of Ti6Al4V. - Highlights: Black-Right-Pointing-Pointer Oblique angle oxygen ion etching creates a high quality, uniform oxide surface. Black-Right-Pointing-Pointer Oxygen etched substrates showed fewer adhered platelets. Black-Right-Pointing-Pointer Platelet activation was reduced by the improved oxide surface. Black-Right-Pointing-Pointer Oxygen etched substrates exhibited increased whole blood clotting times. Black-Right-Pointing-Pointer Although clotting reductions were

  13. Planarization of the diamond film surface by using the hydrogen plasma etching with carbon diffusion process

    International Nuclear Information System (INIS)

    Kim, Sung Hoon

    2001-01-01

    Planarization of the free-standing diamond film surface as smooth as possible could be obtained by using the hydrogen plasma etching with the diffusion of the carbon species into the metal alloy (Fe, Cr, Ni). For this process, we placed the free-standing diamond film between the metal alloy and the Mo substrate like a metal-diamond-molybdenum (MDM) sandwich. We set the sandwich-type MDM in a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system. The sandwich-type MDM was heated over ca. 1000 .deg. C by using the hydrogen plasma. We call this process as the hydrogen plasma etching with carbon diffusion process. After etching the free-standing diamond film surface, we investigated surface roughness, morphologies, and the incorporated impurities on the etched diamond film surface. Finally, we suggest that the hydrogen plasma etching with carbon diffusion process is an adequate etching technique for the fabrication of the diamond film surface applicable to electronic devices

  14. Occurence of pharmaceuticals in surface water

    Directory of Open Access Journals (Sweden)

    Dajana Gašo-Sokač

    2017-01-01

    Full Text Available Pharmaceuticals constitute a large group of human and veterinary medicinal organic compounds which have long been used throughout the world. According to their therapeutic activity they are classified in several groups: antibiotics, analgesics/antipyretic, CNS (Central nervous system drugs, cardiovascular drugs, endocrinology treatments, diagnostic aid-adsorbable organic halogen compounds. Pharmaceuticals are designed to have a physiological effect on humans and animals in trace concentrations. Pharmaceuticals end up in soil, surface waters and eventually in ground water, which can be used as a source of drinking water, after their excretion (in unmetabolized form or as active metabolites from humans or animals via urine or faeces. The possible fates of pharmaceuticals once they get into the aquatic environment are mainly three: (i ultimately they are mineralized to carbon dioxide and water, (ii the compound does not degrade readily because it is lipophilic and is partially retained in the sedimentation sludge and (iii the compound metabolizes to a more hydrophilic molecule, passes through the wastewater treatment plant and ends up in receiving waters (which are surface waters, mainly rivers. These compounds exhibit the highest persistence in the environment. In recent years, and in particular after the use of the advanced measurement technologies, many pharmaceuticals have been identified worldwide and detected at ng/L levels (trace concentrations in the aquatic environment, and are considered as an emerging environmental problem due to their continuous input and persistence in the aquatic ecosystem even at low concentrations.

  15. Catalytically-etched hexagonal boron nitride flakes and their surface activity

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Do-Hyun, E-mail: nanotube@korea.ac.kr [School of Electrical Engineering, Korea University, 5-ga, Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Lee, Minwoo; Ye, Bora [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of); Jang, Ho-Kyun; Kim, Gyu Tae [School of Electrical Engineering, Korea University, 5-ga, Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Lee, Dong-Jin [New Functional Components Research Team, Korea Institute of Footware & Leather Technology, 152 Danggamseo-ro, Busanjin-gu, Busan 614-100 (Korea, Republic of); Kim, Eok-Soo [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of); Kim, Hong Dae, E-mail: hdkim@kitech.re.kr [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of)

    2017-04-30

    Highlights: • Hexagonal boron nitride flakes are etched at low temperature in air by catalysts. • The presence of transition metal oxides produces an etched structure in the flakes. • Etched surfaces become highly active due to vacancy defects formed in the flakes. - Abstract: Hexagonal boron nitride (h-BN) is a ceramic compound which is thermally stable up to 1000 °C in air. Due to this, it is a very challenging task to etch h-BN under air atmosphere at low temperature. In this study, we report that h-BN flakes can be easily etched by oxidation at 350 °C under air atmosphere in the presence of transition metal (TM) oxide. After selecting Co, Cu, and Zn elements as TM precursors, we simply oxidized h-BN sheets impregnated with the TM precursors at 350 °C in air. As a result, microscopic analysis revealed that an etched structure was created on the surface of h-BN flakes regardless of catalyst type. And, X-ray diffraction patterns indicated that the air oxidation led to the formation of Co{sub 3}O{sub 4}, CuO, and ZnO from each precursor. Thermogravimetric analysis showed a gradual weight loss in the temperature range where the weight of h-BN flakes increased by air oxidation. As a result of etching, pore volume and pore area of h-BN flakes were increased after catalytic oxidation in all cases. In addition, the surface of h-BN flakes became highly active when the h-BN samples were etched by Co{sub 3}O{sub 4} and CuO catalysts. Based on these results, we report that h-BN flakes can be easily oxidized in the presence of a catalyst, resulting in an etched structure in the layered structure.

  16. The interplay between surface charging and microscale roughness during plasma etching of polymeric substrates

    Science.gov (United States)

    Memos, George; Lidorikis, Elefterios; Kokkoris, George

    2018-02-01

    The surface roughness developed during plasma etching of polymeric substrates is critical for a variety of applications related to the wetting behavior and the interaction of surfaces with cells. Toward the understanding and, ultimately, the manipulation of plasma induced surface roughness, the interplay between surface charging and microscale roughness of polymeric substrates is investigated by a modeling framework consisting of a surface charging module, a surface etching model, and a profile evolution module. The evolution of initially rough profiles during plasma etching is calculated by taking into account as well as by neglecting charging. It is revealed, on the one hand, that the surface charging contributes to the suppression of root mean square roughness and, on the other hand, that the decrease of the surface roughness induces a decrease of the charging potential. The effect of charging on roughness is intense when the etching yield depends solely on the ion energy, and it is mitigated when the etching yield additionally depends on the angle of ion incidence. The charging time, i.e., the time required for reaching a steady state charging potential, is found to depend on the thickness of the polymeric substrate, and it is calculated in the order of milliseconds.

  17. Preparing superhydrophobic copper surfaces with rose petal or lotus leaf property using a simple etching approach

    Science.gov (United States)

    Talesh Bahrami, H. R.; Ahmadi, B.; Saffari, H.

    2017-05-01

    A facile chemical etching process is developed to fabricate superhydrophobic copper surfaces. In the first step, cleaned copper surfaces immersed in ferric chloride (FeCl3) solutions with specific concentrations for different times. Etched surfaces exhibit the maximum contact angle of 140°. They have large sliding angle and water droplets stuck to the surface even if they were turned upside down which is well-known as rose petal effect. After stearic acid modification of etched surfaces, their contact angle slightly increased to above 150° and sliding angle decreased to smaller than 10° in some cases, which is same as lotus plant leaves property against water. Inspecting SEM images of etched surfaces reveals that many micro-nano structures forming blossom like buildings with curved petals of nanoscale thicknesses are formed. The micro-nano structures sizes and shapes affecting surface hydrophobicity are regulated by controlling reaction times and etchant solution concentrations. X-ray diffraction (XRD) analysis is done on a sample before and after of the etching process where patterns indicate that the same compositions present on the sample.

  18. Nano-structuring of PTFE surface by plasma treatment, etching, and sputtering with gold

    International Nuclear Information System (INIS)

    Reznickova, Alena; Kolska, Zdenka; Hnatowicz, Vladimir; Svorcik, Vaclav

    2011-01-01

    Properties of pristine, plasma modified, and etched (by water and methanol) polytetrafluoroethylene (PTFE) were studied. Gold nanolayers sputtered on this modified PTFE have been also investigated. Contact angle, measured by goniometry, was studied as a function of plasma exposure and post-exposure aging times. Degradation of polymer chains was examined by etching of plasma modified PTFE in water or methanol. The amount of ablated and etched layer was measured by gravimetry. In the next step the pristine, plasma modified, and etched PTFE was sputtered with gold. Changes in surface morphology were observed using atomic force microscopy. Chemical structure of modified polymers was characterized by X-ray photoelectron spectroscopy (XPS). Surface chemistry of the samples was investigated by electrokinetic analysis. Sheet resistance of the gold layers was measured by two-point technique. The contact angle of the plasma modified PTFE decreases with increasing exposure time. The PTFE amount, ablated by the plasma treatment, increases with the plasma exposure time. XPS measurements proved that during the plasma treatment the PTFE macromolecular chains are degraded and oxidized and new –C–O–C–, –C=O, and –O–C=O groups are created in modified surface layer. Surface of the plasma modified PTFE is weakly soluble in methanol and intensively soluble in water. Zeta potential and XPS shown dramatic changes in PTFE surface chemistry after the plasma exposure, water etching, and gold deposition. When continuous gold layer is formed a rapid decrease of the sheet resistance of the gold layer is observed.

  19. On the topography of sputtered or chemically etched crystals: surface energies minimised

    International Nuclear Information System (INIS)

    Chadderton, L.T.; Cope, J.O.

    1984-01-01

    The sputtering of single or polycrystalline metal surfaces by heavy ions gives rise to the characteristic topographical features of etch pits, ripples, and cones (pyramids). For cones and pyramids, in particular, no completely satisfactory explanation exists as to the origin of the basic geometry. Scanning electron micrographs are shown. It is proposed that for topographical features of both chemical etch and ion beam origin on single crystal surfaces, the presence of facets on cones and pyramids in particular, is due to the minimization of surface energy. (U.K.)

  20. Antireflective grassy surface on glass substrates with self-masked dry etching

    Science.gov (United States)

    Song, Young Min; Park, Gyeong Cheol; Kang, Eun Kyu; Yeo, Chan Il; Lee, Yong Tak

    2013-12-01

    Although recently developed bio-inspired nanostructures exhibit superior optic performance, their practical applications are limited due to cost issues. We present highly transparent glasses with grassy surface fabricated with self-masked dry etch process. Simultaneously generated nanoclusters during reactive ion etch process with simple gas mixture (i.e., CF4/O2) enables lithography-free, one-step nanostructure fabrication. The resulting grassy surfaces, composed of tapered subwavelength structures, exhibit antireflective (AR) properties in 300 to 1,800-nm wavelength ranges as well as improved hydrophilicity for antifogging. Rigorous coupled-wave analysis calculation provides design guidelines for AR surface on glass substrates.

  1. Laser surface pretreatment of 100Cr6 bearing steel – Hardening effects and white etching zones

    Energy Technology Data Exchange (ETDEWEB)

    Buling, Anna, E-mail: a.buling@hs-osnabrueck.de [Faculty of Engineering and Computer Science, University of Applied Sciences, 49009 Osnabrück (Germany); Sändker, Hendrik; Stollenwerk, Jochen [Fraunhofer Institute for Laser Technology ILT, Steinbachstrasse 15, 52074 Aachen (Germany); Krupp, Ulrich; Hamann-Steinmeier, Angela [Faculty of Engineering and Computer Science, University of Applied Sciences, 49009 Osnabrück (Germany)

    2016-08-15

    Highlights: • Laser surface pretreatment of the bearing steel 100Cr6 is performed. • Microstructural changes of the surface are examined by light microscopy and SEM. • Topographical changes are observed using white light interferometry. • Micro-hardness testing show the existence of very hard white etching zones (WEZ). • WEZ are attributed to near-surface reaustenitization and rapid quenching. • Dark etching zones (DEZ) are found at the laser path edges after laser pretreatment. - Abstract: In order to achieve a surface pretreatment of the bearing steel 100Cr6 (1–1.5 wt.% Cr) a laser-based process was used. The obtained modification may result in an optimization of the adhesive properties of the surface with respect to an anticorrosion polymer coating on the basis of PEEK (poly-ether-ether-ketone), which is applied on the steel surface by a laser melting technique. This work deals with the influence of the laser-based pretreatment regarding the surface microstructure and the micro-hardness of the steel, which has been examined by scanning electron microscopy (SEM), light microscopy and automated micro-hardness testing. The most suitable parameter set for the laser-based pretreatment leads to the formation of very hard white etching zones (WEZ) with a thickness of 23 μm, whereas this pretreatment also induces topographical changes. The occurrence of the white etching zones is attributed to near-surface re-austenitization and rapid quenching. Moreover, dark etching zones (DEZ) with a thickness of 32 μm are found at the laser path edges as well as underneath the white etching zones (WEZ). In these areas, the hardness is decreased due to the formation of oxides as a consequence of re-tempering.

  2. Molecular dynamics simulation of temperature effects on CF3+ etching of Si surface

    NARCIS (Netherlands)

    Ning, J. P.; Lu, X. D.; Zhao, C. L.; Qin, Y. M.; He, P. N.; Bogaerts, A.; Gou, F. J.

    2010-01-01

    Molecular dynamics method was employed to investigate the effects of the reaction layer formed near the surface region on CF3+ etching of Si at different temperatures. The simulation results show that the coverages of F and C are sensitive to the surface temperature. With increasing temperature, the

  3. Effect of Surface Treatment on Enamel Cracks after Orthodontic Bracket Debonding: Er,Cr:YSGG Laser-Etching versus Acid-Etching

    OpenAIRE

    Hassanali Ghaffari; Amirhossein Mirhashemi; Tahereh Baherimoghadam; Amir Azmi; Reza Rasooli

    2017-01-01

    Objectives: This study sought to compare enamel cracks after orthodontic bracket debonding in the surfaces prepared with erbium, chromium: yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser and the conventional acid-etching technique.Materials and Methods: This in-vitro experimental study was conducted on 60 sound human premolars extracted for orthodontic purposes. The teeth were randomly divided into two groups (n=30). The teeth in group A were etched with 37% phosphoric acid gel, while the ...

  4. Extremely superhydrophobic surfaces with micro- and nanostructures fabricated by copper catalytic etching.

    Science.gov (United States)

    Lee, Jung-Pil; Choi, Sinho; Park, Soojin

    2011-01-18

    We demonstrate a simple method for the fabrication of rough silicon surfaces with micro- and nanostructures, which exhibited superhydrophobic behaviors. Hierarchically rough silicon surfaces were prepared by copper (Cu)-assisted chemical etching process where Cu nanoparticles having particle size of 10-30 nm were deposited on silicon surface, depending on the period of time of electroless Cu plating. Surface roughness was controlled by both the size of Cu nanoparticles and etching conditions. As-synthesized rough silicon surfaces showed water contact angles ranging from 93° to 149°. Moreover, the hierarchically rough silicon surfaces were chemically modified by spin-coating of a thin layer of Teflon precursor with low surface energy. And thus it exhibited nonsticky and enhanced hydrophobic properties with extremely high contact angle of nearly 180°.

  5. Effect of fluoride pretreatment on primary and permanent tooth surfaces by acid-etching.

    Science.gov (United States)

    Choi, Samjin; Cheong, Youjin; Lee, Gi-Ja; Park, Hun-Kuk

    2010-01-01

    This study observed the effect of fluoride application on a 37% phosphoric acid etching for 20 s of the enamel surfaces of primary and permanent teeth based on a clinical protocol employed in dental hospitals, through atomic force microscopy and scanning electron microscopy. Enamel samples were prepared from 84 exfoliated and noncarious teeth. Primary (groups 1-4) and permanent (groups 5-8) tooth samples were assigned randomly to one of eight groups based on the timing of acid-etching with 37% phosphoric acid after an acidulated phosphate fluoride (APF) treatment. Groups 1 and 5 received no fluoride application. Groups 2-4 and 6-8 were pretreated with fluoride and received acid-etching 2 weeks later (groups 2 and 6), 1 week later (groups 3 and 7), and immediately (groups 4 and 8). The acid-etching process led to a significant increase in roughness (pprimary and permanent tooth surface roughness (p<0.005). An acid-etching procedure 2 weeks after performing an APF pretreatment might be recommended to obtain the maximum enamel adhesion of a resin composite. Copyright © 2010 Wiley Periodicals, Inc.

  6. Surface preparation of FeS[sub 2] via electrochemical etching and interface formation with metals

    Energy Technology Data Exchange (ETDEWEB)

    Bronold, M. (Abt. Solare Energetik, Hahn-Meitner-Inst. Berlin (Germany)); Bueker, K. (Abt. Solare Energetik, Hahn-Meitner-Inst. Berlin (Germany)); Kubala, S. (Abt. Solare Energetik, Hahn-Meitner-Inst. Berlin (Germany)); Pettenkofer, C. (Abt. Solare Energetik, Hahn-Meitner-Inst. Berlin (Germany)); Tributsch, H. (Abt. Solare Energetik, Hahn-Meitner-Inst. Berlin (Germany))

    1993-01-16

    The effect of passing cathodic currents at potentials of hydrogen evolution through differently pretreated n-type pyrite (FeS[sub 2]) electrodes is studied by XPS. It is shown that hydrogen evolution results in an etching of the crystal via dissolution of FeS[sub 2]. Surfaces that are destroyed through sputtering or polishing are restored through this etching procedure. (100) and (111) surfaces behave similar to each other. When depositing gold onto the electrochemically etched surface in ultrahigh vacuum no change of the band bending of the clean surface (650 meV) is observed. An abrupt interface with FeS-like defects in the pyrite is formed. deposition of platinum yields a ternary Pt-Fe-S interlayer between pyrite and metallic Pt. The band bending is reduced by 200 meV during contact formation. Concerning the chemical composition and the electronic structure the etched surfaces behave nearly identical to clean (100) cleavage planes of pyrite. (orig.)

  7. Acid Etching as Surface Treatment Method for Luting of Glass-Ceramic Restorations, part 1: Acids, Application Protocol and Etching Effectiveness

    Directory of Open Access Journals (Sweden)

    Emilija Barjaktarova-Valjakova

    2018-03-01

    CONCLUSION: Acid etching of the bonding surface of glass - ceramic restorations is considered as the most effective treatment method that provides a reliable bond with composite cement. Selective removing of the glassy matrix of silicate ceramics results in a micromorphological three-dimensional porous surface that allows micromechanical interlocking of the luting composite.

  8. Surface roughness of etched composite resin in light of composite repair

    NARCIS (Netherlands)

    Loomans, B.A.C.; Cardoso, M.V.; Opdam, N.J.M.; Roeters, F.J.M.; Munck, J. De; Huysmans, M.C.D.N.J.M.; Meerbeek, B. Van

    2011-01-01

    OBJECTIVES: In search for clinically effective composite repair protocols, the effect of various etching protocols on the surface roughness of composite resins with different filler composition were investigated. METHODS: Of two composite resins (hybrid-filled Clearfil AP-X; nano-filled Filtek

  9. Evolution of patterned and unpatterned surfaces during high temperature annealing and plasma etching

    Science.gov (United States)

    Kwon, Taesoon

    In this thesis we describe experiments designed to probe spontaneous and directed surface evolution during annealing and plasma etching of three materials of high technological interest: silicon, nanoporous silica and photoresist. Vicinal Si(111) surfaces provide a source of steps whose configuration we control via the introduction of a topographic pattern; this is done using combination of photolithography and reactive ion etching. We study the length scale dependence of self-organization of step bunches during annealing at ˜1273°C in ultrahigh vacuum (UHV), resulting from sublimation and diffusion, and the competition between effects due to the intrinsic stiffness of steps and their mutual interactions. We also show the results of numerical simulations on these surfaces based upon a simple model of step motion, which we compare with our experimental observations. Nanoporous silica (NPS) is a heterogeneous material which is of potential use in micro/nanoelectronic applications requiring an insulator with a small dielectric constant. We investigate the stability of the NPS-plasma interface during etching, comparing the tendency for spontaneous pattern formation with the persistence of patterned perturbations. We study samples with various porosity (0˜50 vol.%) under low pressure C4F8/90%Ar plasma etching conditions. Our AFM characterization of unpatterned surfaces shows a monotonic increase in RMS roughness with etching time. Annealing etched NPS surfaces at temperatures over the range from 300˜900°C in UHV as well as in non-oxidizing environment produces no significant relaxation of etching-induced surface roughness. Statistical analysis using a height-height correlation function reveals that NPS surfaces do not show a simple scaling behavior during the technologically-relevant transient time regime. Etching of patterned surfaces reveals a persistent period of approximately 400 nm, which is ˜4 times that which spontaneously appears during etching of

  10. Silicon surface damage caused by reactive ion etching in fluorocarbon gas mixtures containing hydrogen

    International Nuclear Information System (INIS)

    Norstroem, H.; Blom, H.; Ostling, M.; Nylandsted Larsen, A.; Keinonen, J.; Berg, S.

    1991-01-01

    For selective etching of SiO 2 on silicon, gases or gas mixtures containing hydrogen are often used. Hydrogen from the glow discharge promotes the formation of a thin film polymer layer responsible for the selectivity of the etching process. The reactive ion etch (RIE) process is known to create damage in the silicon substrate. The influence of hydrogen on the damage and deactivation of dopants is investigated in the present work. The distribution of hydrogen in silicon, after different etching and annealing conditions have been studied. The influence of the RIE process on the charge carrier concentration in silicon has been investigated. Various analytical techniques like contact resistivity measurements, four point probe measurements, and Hall measurements have been used to determine the influence of the RIE process on the electrical properties of processed silicon wafers. The hydrogen profile in as-etched and post annealed wafers was determined by the 1 H( 15 N,αγ) 12 C nuclear reaction. The depth of the deactivated surface layer is discussed in terms of the impinging hydrogen ion energy, i.e., the possibility of H + ions to pick up an energy equal to the peak-to-peak voltage of the rf signal

  11. Synchrotron radiation induced direct photo-etching and surface modification of PTFE

    International Nuclear Information System (INIS)

    Oshima, Akihiro; Washio, Masakazu

    2003-01-01

    In the first part of this article, we have described and discussed the measurement results of etching rates by direct photo-etching using Synchrotron Radiation (SR) for various kind of crosslinked PTFEs, which were prepared by different crosslinking doses, comparing with the non-crosslinked PTFE. It has been found that the etching rates obtained for crosslinked PTFE were much larger than that of non-crosslinked one. These results are not described by simple consideration such as the G values of main chain scission. We propose that the etching rates should be discussed by the complex mechanism through at least two different steps such as polymer decomposition and fragment desorption. In the second part of the article, we have described and discussed the abnormal reaction induced at the surface region after the SR etching for non-crosslinked PTFE. Through the measurements using DSC and solid state 19 F-NMR, we have confirmed the crosslinking reaction of PTFE even in solid state PTFE. This should be induced by the very high density radical formation in very thin area of PTFE films by SR radiation. (author)

  12. A study on decontamination of TRU, Co, and Mo using plasma surface etching technique

    International Nuclear Information System (INIS)

    Seo, Y.D.; Kim, Y.S.; Paek, S.H.; Lee, K.H.; Jung, C.H.; Oh, W.Z.

    2001-01-01

    Recently dry decontamination/surface-cleaning technology using plasma etching has been focused in the nuclear industry. In this study, the applicability and the effectiveness of this new dry processing technique are experimentally investigated by examining the etching reaction of UO 2 , Co, and Mo in r.f. plasma with the etchant gas of CF 4 /O 2 mixture. UO 2 is chosen as a representing material for uranium and TRU (TRans-Uranic) compounds and metallic Co and Mo are selected because they are the principal contaminants in the spent nuclear components such as valves and pipes made of stainless steel or INCONEL. Results show that in all cases maximum etching rate is achieved when the mole fraction of O 2 to CF 4 /O 2 mixture gas is 20 %, regardless of temperature and r.f. power. (author)

  13. Change of wettability of PTFE surface by sputter etching and excimer laser. Sputter etching oyobi excimer laser ni yoru PTFE hyomen no shinsuika

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, S. (Nitto Denko Corp., Osaka (Japan)); Kubo, U. (Kinki University, Osaka (Japan))

    1994-06-20

    The wettability of PTFE (polytetrafluoroethylene) surfaces was improved by sputter etching and excimer laser irradiation. In sputter etching, the PTFE surface was treated by reactive sputter etching with H2O gas to give active groups on the surface. In laser irradiation, the surface was irradiated in pure water by high-energy KrF excimer laser. As the surface wettability was evaluated with a contact angle to water, the contact angle decreased remarkably in both treatments resulting in a good improvement effect. In sputter etching, various new chemical bonds such as F-C=O, F2C-FC-O, F2C-C-O and C-O were observed because of a decrease in F and incorporation of oxygen. Such chemical bonds could be eliminated by ultraviolet ray irradiation, and the treated surface condition approached the initial condition after irradiation of 200 hours. In laser irradiation, it was suggested that C-F bonds were broken, and OH groups were added to the surface by dissociation of H2O to H and OH. 7 refs., 8 figs., 1 tab.

  14. The Effect of Hydrofluoric Acid Etching Duration on the Surface Micromorphology, Roughness, and Wettability of Dental Ceramics

    Directory of Open Access Journals (Sweden)

    Ravikumar Ramakrishnaiah

    2016-05-01

    Full Text Available The current laboratory study is evaluating the effect of hydrofluoric acid etching duration on the surface characteristics of five silica-based glass ceramics. Changes in the pore pattern, crystal structure, roughness, and wettability were compared and evaluated. Seventy-five rectangularly shaped specimens were cut from each material (IPS e-max™, Dentsply Celtra™, Vita Suprinity™, Vita mark II™, and Vita Suprinity FC™; the sectioned samples were finished, polished, and ultrasonically cleaned. Specimens were randomly assigned into study groups: control (no etching and four experimental groups (20, 40, 80 and 160 s of etching. The etched surfaces’ microstructure including crystal structure, pore pattern, pore depth, and pore width was studied under a scanning electron microscope, and the surface roughness and wettability were analyzed using a non-contact surface profilometer and a contact angle measuring device, respectively. The results were statistically analyzed using one-way analysis of variance (ANOVA and the post hoc Tukey’s test. The results showed a significant change in the pore number, pore pattern, crystal structure, surface roughness, and wettability with increased etching duration. Etching for a short time resulted in small pores, and etching for longer times resulted in wider, irregular grooves. A significant increase in the surface roughness and wettability was observed with an increase in the etching duration. The findings also suggested a strong association between the surface roughness and wettability.

  15. CF3+ etching silicon surface: A molecular dynamics study

    NARCIS (Netherlands)

    Zhao, C.; Lu, X.; He, P.; Zhang, P.; Sun, W.; Zhang, Jingwei; Chen, F.; Gou, F.

    2012-01-01

    In this study, a molecular dynamics simulation method has been employed to investigate CF3 + ions, bombarding Si surface with the energy of 100, 200, 300 and 400 eV and an incident angle of 45 degrees with respect to the normal. The simulation results show that when CF3+ ions approach the Si surface

  16. Nanowall formation by maskless wet-etching on a femtosecond laser irradiated silicon surface

    Science.gov (United States)

    Lee, Siwoo; Jo, Kukhyun; Keum, Hee-sung; Chae, Sangmin; Kim, Yonghyeon; Choi, Jiyeon; Lee, Hyun Hwi; Kim, Hyo Jung

    2018-04-01

    We found that micro-cells surrounded by nanowalls can be formed by a maskless wet-etching process on Si (100) surfaces possessing Laser Induced Periodic Surface Structure (LIPSS) by femtosecond laser irradiation. The LIPSS process could produce periodic one-dimensional micron scale ripples on a Si surface, which could be developed into micro-cells by a subsequent etching process. The solution etching conditions strongly affected both the micro-cell and nanowall shapes such as the height and the thickness of nanowalls. The tetramethylammonium hydroxide solution created thin nanowalls and the resulting micro-cells with a well-flattened bottom while the KOH solution formed thick walls and incomplete micro-cells. The bottoms of micro-cells surrounded by the nanowalls were considerably flat with a 3.10 nm surface roughness. A pentacene layer was deposited on the micro-cells of a Si surface to evaluate the film properties by grazing incidence wide angle x-ray scattering measurements. The pentacene film on the micro-cell Si surface showed a strong film phase, which was comparable to the film phase grown on the atomically flat Si surface.

  17. Investigation of Plasma Etching for Superconducting RF Cavities Surface Preparation. Final Report

    International Nuclear Information System (INIS)

    Vuskovic, Leposava

    2009-01-01

    Our results show that plasma-treated samples are comparable or superior to a BCP sample, both in the size of features and sharpness of the boundaries between individual features at the surface. Plasma treatment of bulk Nb cavities is a promising technique for microwave cavities preparation used in particle acceleration application. Etching rates are sufficiently high to enable efficient removal of mechanically damaged surface layer with high reproducibility. No impurities are deposited on the bulk Nb surface during plasma treatment. Surface topology characteristic are promising for complex cavity geometry, since discharge conforms the profile of the reaction chamber. In view of these experimental results, we propose plasma treatment for producing microwave cavities with high Q factor instead of using bulk Nb treated with wet etching process.

  18. Influence of Pre-etching Times on Fatigue Strength of Self-etch Adhesives to Enamel.

    Science.gov (United States)

    Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Endo, Hajime; Tsuchiya, Kenji; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    To use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence of phosphoric acid pre-etching times prior to application of self-etch adhesives on enamel bonding. Two single-step self-etch universal adhesives (Prime&Bond Elect and Scotchbond Universal), a conventional single-step self-etch adhesive (G-ӕnial Bond), and a conventional two-step self-etch adhesive (OptiBond XTR) were used. The SBS and SFS were obtained with phosphoric acid pre-etching for 3, 10, or 15 s prior to application of the adhesives, and without pre-etching (0 s) as a control. A staircase method was used to determine the SFS with 10 Hz frequency for 50,000 cycles or until failure occurred. The mean demineralization depth for each treated enamel surface was also measured using a profilometer. For all the adhesives, the groups with pre-etching showed significantly higher SBS and SFS than groups without pre-etching. However, there was no significant difference in SBS and SFS among groups with > 3 s of preetching. In addition, although the groups with pre-etching showed significantly deeper demineralization depths than groups without pre-etching, there was no significant difference in depth among groups with > 3 s of pre-etching. Three seconds of phosphoric acid pre-etching prior to application of self-etch adhesive can enhance enamel bonding effectiveness.

  19. Dynamic secondary ion mass spectroscopy of Au nanoparticles on Si wafer using Bi3+ as primary ion coupled with surface etching by Ar cluster ion beam: The effect of etching conditions on surface structure

    Science.gov (United States)

    Park, Eun Ji; Choi, Chang Min; Kim, Il Hee; Kim, Jung-Hwan; Lee, Gaehang; Jin, Jong Sung; Ganteför, Gerd; Kim, Young Dok; Choi, Myoung Choul

    2018-01-01

    Wet-chemically synthesized Au nanoparticles were deposited on Si wafer surfaces, and the secondary ions mass spectra (SIMS) from these samples were collected using Bi3+ with an energy of 30 keV as the primary ions. In the SIMS, Au cluster cations with a well-known, even-odd alteration pattern in the signal intensity were observed. We also performed depth profile SIMS analyses, i.e., etching the surface using an Ar gas cluster ion beam (GCIB), and a subsequent Bi3+ SIMS analysis was repetitively performed. Here, two different etching conditions (Ar1600 clusters of 10 keV energy or Ar1000 of 2.5 keV denoted as "harsh" or "soft" etching conditions, respectively) were used. Etching under harsh conditions induced emission of the Au-Si binary cluster cations in the SIMS spectra of the Bi3+ primary ions. The formation of binary cluster cations can be induced by either fragmentation of Au nanoparticles or alloying of Au and Si, increasing Au-Si coordination on the sample surface during harsh GCIB etching. Alternatively, use of the soft GCIB etching conditions resulted in exclusive emission of pure Au cluster cations with nearly no Au-Si cluster cation formation. Depth profile analyses of the Bi3+ SIMS combined with soft GCIB etching can be useful for studying the chemical environments of atoms at the surface without altering the original interface structure during etching.

  20. Improved surface quality of anisotropically etched silicon {111} planes for mm-scale optics

    International Nuclear Information System (INIS)

    Cotter, J P; Hinds, E A; Zeimpekis, I; Kraft, M

    2013-01-01

    We have studied the surface quality of millimetre-scale optical mirrors produced by etching CZ and FZ silicon wafers in potassium hydroxide to expose the {111} planes. We find that the FZ surfaces have four times lower noise power at spatial frequencies up to 500 mm −1 . We conclude that mirrors made using FZ wafers have higher optical quality. (technical note)

  1. Inductively Coupled Plasma-Induced Electrical Damage on HgCdTe Etched Surface at Cryogenic Temperatures

    Science.gov (United States)

    Liu, L. F.; Chen, Y. Y.; Ye, Z. H.; Hu, X. N.; Ding, R. J.; He, L.

    2018-03-01

    Plasma etching is a powerful technique for transferring high-resolution lithographic patterns into HgCdTe material with low etch-induced damage, and it is important for fabricating small-pixel-size HgCdTe infrared focal plane array (IRFPA) detectors. P- to n-type conversion is known to occur during plasma etching of vacancy-doped HgCdTe; however, it is usually unwanted and its removal requires extra steps. Etching at cryogenic temperatures can reduce the etch-induced type conversion depth in HgCdTe via the electrical damage mechanism. Laser beam-induced current (LBIC) is a nondestructive photoelectric characterization technique which can provide information regarding the vertical and lateral electrical field distribution, such as defects and p-n junctions. In this work, inductively coupled plasma (ICP) etching of HgCdTe was implemented at cryogenic temperatures. For an Ar/CH4 (30:1 in SCCM) plasma with ICP input power of 1000 W and RF-coupled DC bias of ˜ 25 V, a HgCdTe sample was dry-etched at 123 K for 5 min using ICP. The sample was then processed to remove a thin layer of the plasma-etched region while maintaining a ladder-like damaged layer by continuously controlling the wet chemical etching time. Combining the ladder etching method and LBIC measurement, the ICP etching-induced electrical damage depth was measured and estimated to be about 20 nm. The results indicate that ICP etching at cryogenic temperatures can significantly suppress plasma etching-induced electrical damage, which is beneficial for defining HgCdTe mesa arrays.

  2. Surface Roughening of Polystyrene and Poly(methyl methacrylate in Ar/O2 Plasma Etching

    Directory of Open Access Journals (Sweden)

    Amy E. Wendt

    2010-12-01

    Full Text Available Selectively plasma-etched polystyrene-block-poly(methyl methacrylate (PS-b-PMMA diblock copolymer masks present a promising alternative for subsequent nanoscale patterning of underlying films. Because mask roughness can be detrimental to pattern transfer, this study examines roughness formation, with a focus on the role of cross-linking, during plasma etching of PS and PMMA. Variables include ion bombardment energy, polymer molecular weight and etch gas mixture. Roughness data support a proposed model in which surface roughness is attributed to polymer aggregation associated with cross-linking induced by energetic ion bombardment. In this model, RMS roughness peaks when cross-linking rates are comparable to chain scissioning rates, and drop to negligible levels for either very low or very high rates of cross-linking. Aggregation is minimal for very low rates of cross-linking, while very high rates produce a continuous cross-linked surface layer with low roughness. Molecular weight shows a negligible effect on roughness, while the introduction of H and F atoms suppresses roughness, apparently by terminating dangling bonds. For PS etched in Ar/O2 plasmas, roughness decreases with increasing ion energy are tentatively attributed to the formation of a continuous cross-linked layer, while roughness increases with ion energy for PMMA are attributed to increases in cross-linking from negligible to moderate levels.

  3. Dry Etch Black Silicon with Low Surface Damage: Effect of Low Capacitively Coupled Plasma Power

    DEFF Research Database (Denmark)

    Iandolo, Beniamino; Plakhotnyuk, Maksym; Gaudig, Maria

    2017-01-01

    Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we pr...... carrier lifetime thanks to reduced ion energy. Surface passivation using atomic layer deposition of Al2O3 improves the effective lifetime to 7.5 ms and 0.8 ms for black silicon n- and p-type wafers, respectively.......Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we...... present a RIE optimization leading to reduced surface damage while retaining excellent light trapping and low reflectivity. In particular, we demonstrate that the reduction of the capacitively coupled power during reactive ion etching preserves a reflectance below 1% and improves the effective minority...

  4. Surface morphology and electronic structure of halogen etched InAs (1 1 1)

    Energy Technology Data Exchange (ETDEWEB)

    Eassa, N., E-mail: nashwa.eassa@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Murape, D.M. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Betz, R. [Department of Chemistry, Nelson Mandela Metropolitan University (South Africa); Neethling, J.H.; Venter, A.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2012-05-15

    The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H{sub 2}O, Br-methanol and I-ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {l_brace}1 1 1{r_brace} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.

  5. Performance of a universal adhesive on etched and non-etched surfaces: Do the results match the expectations?

    Energy Technology Data Exchange (ETDEWEB)

    Grégoire, Geneviève, E-mail: genevieve.gregoire@univ-tlse3.fr [Department of Biomaterials, Faculty of Odontology, University Toulouse III, 31062 Toulouse (France); Sharrock, Patrick, E-mail: patrick.sharrock@gmail.com [CNRS UMR 5302, University Toulouse III, Mines-Albi, 81013 Albi (France); Prigent, Yann, E-mail: prigent@chimie.ups-tlse.fr [Institut de Chimie de Toulouse (ICT) – FR 2599, Faculté des Sciences et de l' Ingénierie, University Toulouse III, 31062 Toulouse (France)

    2016-09-01

    A universal adhesive was applied to human dentin in both the etched and rinsed state and the normal non etched state, to compare the resulting properties and detect any significant differences. The study focused on observations of the hybrid layer by scanning electron microscopy and on fluid permeation measurements as a function of time. Spectroscopic characterizations included infrared and differential calorimetric curves of the samples. The results obtained show non-statistically significant fluid permeability between the two sample types. Both the etched and rinsed samples and the non-etched ones showed similar homogeneous hybrid layers that reduced the fluid flow, and corresponded to well spread polymer coatings. The infrared results illustrated the spectra obtained on going from the outside adhesive layer to the inside portion of the dentin-polymer interface and did not reveal any intermediate zone resembling demineralized collagen that would be water saturated and not infiltrated with adhesive. The Differential Scanning Calorimetry (DSC) curves corresponded to the curves obtained with ethanol wet bonding in that free water (melting at 0 °C) was removed by the universal adhesive, and that no collagen melting was observed for the non-etched samples. The Diffusion-Ordered Spectroscopy Nuclear Magnetic Resonance (DOSY NMR) spectrum of the virgin adhesive showed the presence of water and ethanol solvents and indicated that several monomer or prepolymer molecules were present with multiple acrylic functional groups with diffusion coefficients related to molecular weights. Overall, the results show that universal adhesive can be used in the milder self-etch mode and that more aggressive etch and rinse procedure can be reserved for the occasions with sclerotic dentin or enamel regions more difficult to treat.

  6. Adaptive wettability-enhanced surfaces ordered on molded etched substrates using shrink film

    International Nuclear Information System (INIS)

    Jayadev, Shreshta; Pegan, Jonathan; Dyer, David; McLane, Jolie; Lim, Jessica; Khine, Michelle

    2013-01-01

    Superhydrophobic surfaces in nature exhibit desirable properties including self-cleaning, bacterial resistance, and flight efficiency. However, creating such intricate multi-scale features with conventional fabrication approaches is difficult, expensive, and not scalable. By patterning photoresist on pre-stressed shrink-wrap film, which contracts by 95% in surface area when heated, such features over large areas can be obtained easily. Photoresist serves as a dry etch mask to create complex and high-aspect ratio microstructures in the film. Using a double-shrink process, we introduce adaptive wettability-enhanced surfaces ordered on molded etched (AWESOME) substrates. We first create a mask out of the children’s toy ‘Shrinky-Dinks’ by printing dots using a laserjet printer. Heating this thermoplastic sheet causes the printed dots to shrink to a fraction of their original size. We then lithographically transfer the inverse pattern onto photoresist-coated shrink-wrap polyolefin film. The film is then plasma etched. After shrinking, the film serves as a high-aspect ratio mold for polydimethylsiloxane, creating a superhydrophobic surface with water contact angles >150° and sliding angles <10°. We pattern a microarray of ‘sticky’ spots with a dramatically different sliding angle compared to that of the superhydrophobic region, enabling microtiter-plate type assays without the need for a well plate. (paper)

  7. Effect of Surface Treatment on Enamel Cracks After Orthodontic Bracket Debonding: Er,Cr:YSGG Laser-Etching Versus Acid-Etching.

    Science.gov (United States)

    Ghaffari, Hassanali; Mirhashemi, Amirhossein; Baherimoghadam, Tahereh; Azmi, Amir; Rasooli, Reza

    2017-09-01

    This study sought to compare enamel cracks after orthodontic bracket debonding in the surfaces prepared with erbium, chromium: yttrium-scandium-galliumgarnet (Er,Cr:YSGG) laser and the conventional acid-etching technique. This in-vitro experimental study was conducted on 60 sound human premolars extracted for orthodontic purposes. The teeth were randomly divided into two groups (n=30). The teeth in group A were etched with 37% phosphoric acid gel, while the teeth in group B were subjected to Er,Cr:YSGG laser irradiation (gold handpiece, MZ8 tip, 50Hz, 4.5W, 60μs, 80% water and 60% air). Orthodontic brackets were bonded to the enamel surfaces and were then debonded in both groups. The samples were inspected under a stereomicroscope at ×38 magnification to assess the number and length of enamel cracks before bonding and after debonding. Independent-samples t-test was used to compare the frequency of enamel cracks in the two groups. Levene's test was applied to assess the equality of variances. No significant difference was noted in the frequency or length of enamel cracks between the two groups after debonding (P>0.05). Despite the same results of the frequency and length of enamel cracks in the two groups and by considering the side effects of acid-etching (demineralization and formation of white spot lesions), Er,Cr:YSGG laser may be used as an alternative to acid-etching for enamel surface preparation prior to bracket bonding.

  8. Plasma etching to enhance the surface insulating stability of alumina for fusion applications

    Directory of Open Access Journals (Sweden)

    M. Malo

    2016-12-01

    Full Text Available A significant increase in the surface electrical conductivity of alumina, considered one of the most promising insulating materials for numerous applications in fusion devices, has been observed during ion bombardment in vacuum due to oxygen loss by preferential sputtering. Although this is expected to cause serious limitations to insulating components functionality, recent studies showed it is possible to restore the damaged lattice by oxygen reincorporation during thermal treatments in air. These studies also revealed a correlation between conductivity and ion beam induced luminescence, which is being used to monitor surface electrical conductivity degradation and help qualify the post irradiation recovery. Work now carried out for Wesgo alumina considers oxygen implantation and plasma etching as additional methods to improve recovered layer depth and quality. Both conductivity and luminescence results indicate the potential use of plasma etching not only for damage recovery, but also as a pre-treatment to enhance material stability during irradiation.

  9. Influence of pH, bleaching agents, and acid etching on surface wear of bovine enamel

    Science.gov (United States)

    Soares, Ana Flávia; Bombonatti, Juliana Fraga Soares; Alencar, Marina Studart; Consolmagno, Elaine Cristina; Honório, Heitor Marques; Mondelli, Rafael Francisco Lia

    2016-01-01

    ABSTRACT Development of new materials for tooth bleaching justifies the need for studies to evaluate the changes in the enamel surface caused by different bleaching protocols. Objective The aim of this study was to evaluate the bovine dental enamel wear in function of different bleaching gel protocols, acid etching and pH variation. Material and Methods Sixty fragments of bovine teeth were cut, obtaining a control and test areas. In the test area, one half received etching followed by a bleaching gel application, and the other half, only the bleaching gel. The fragments were randomly divided into six groups (n=10), each one received one bleaching session with five hydrogen peroxide gel applications of 8 min, activated with hybrid light, diode laser/blue LED (HL) or diode laser/violet LED (VHL) (experimental): Control (C); 35% Total Blanc Office (TBO35HL); 35% Lase Peroxide Sensy (LPS35HL); 25% Lase Peroxide Sensy II (LPS25HL); 15% Lase Peroxide Lite (LPL15HL); and 10% hydrogen peroxide (experimental) (EXP10VHL). pH values were determined by a pHmeter at the initial and final time periods. Specimens were stored, subjected to simulated brushing cycles, and the superficial wear was determined (μm). ANOVA and Tukey´s tests were applied (α=0.05). Results The pH showed a slight decrease, except for Group LPL15HL. Group LPS25HL showed the highest degree of wear, with and without etching. Conclusion There was a decrease from the initial to the final pH. Different bleaching gels were able to increase the surface wear values after simulated brushing. Acid etching before bleaching increased surface wear values in all groups. PMID:27008254

  10. Effect of Cl2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Bouchoule, S.; Vallier, L.; Patriarche, G.; Chevolleau, T.; Cardinaud, C.

    2012-01-01

    A Cl 2 -HBr-O 2 /Ar inductively coupled plasma (ICP) etching process has been adapted for the processing of InP-based heterostructures in a 300-mm diameter CMOS etching tool. Smooth and anisotropic InP etching is obtained at moderate etch rate (∼600 nm/min). Ex situ x-ray energy dispersive analysis of the etched sidewalls shows that the etching anisotropy is obtained through a SiO x passivation mechanism. The stoichiometry of the etched surface is analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. It is observed that Cl 2 -based ICP etching results in a significantly P-rich surface. The phosphorous layer identified on the top surface is estimated to be ∼1-1.3-nm thick. On the other hand InP etching in HBr/Ar plasma results in a more stoichiometric surface. In contrast to the etched sidewalls, the etched surface is free from oxides with negligible traces of silicon. Exposure to ambient air of the samples submitted to Cl 2 -based chemistry results in the complete oxidation of the P-rich top layer. It is concluded that a post-etch treatment or a pure HBr plasma step may be necessary after Cl 2 -based ICP etching for the recovery of the InP material.

  11. Surface changes of biopolymers PHB and PLLA induced by Ar+ plasma treatment and wet etching

    Science.gov (United States)

    Slepičková Kasálková, N.; Slepička, P.; Sajdl, P.; Švorčík, V.

    2014-08-01

    Polymers, especially group of biopolymers find potential application in a wide range of disciplines due to their biodegradability. In biomedical applications these materials can be used as a scaffold or matrix. In this work, the influence of the Ar+ plasma treatment and subsequent wet etching (acetone/water) on the surface properties of polymers were studied. Two biopolymers - polyhydroxybutyrate with 8% polyhydroxyvalerate (PHB) and poly-L-lactic acid (PLLA) were used in these experiments. Modified surface layers were analyzed by different methods. Surface wettability was characterized by determination of water contact angle. Changes in elemental composition of modified surfaces were performed by X-ray Photoelectron Spectroscopy (XPS). Surface morphology and roughness was examined using Atomic Force Microscopy (AFM). Gravimetry method was used to study the mass loss. It was found that the modification from both with plasma and wet etching leads to dramatic changes of surface properties (surface chemistry, morphology and roughness). Rate of changes of these features strongly depends on the modification parameters.

  12. Model polymer etching and surface modification by a time modulated RF plasma jet: role of atomic oxygen and water vapor

    International Nuclear Information System (INIS)

    Luan, P; Knoll, A J; Wang, H; Oehrlein, G S; Kondeti, V S S K; Bruggeman, P J

    2017-01-01

    The surface interaction of a well-characterized time modulated radio frequency (RF) plasma jet with polystyrene, poly(methyl methacrylate) and poly(vinyl alcohol) as model polymers is investigated. The RF plasma jet shows fast polymer etching but mild chemical modification with a characteristic carbonate ester and NO formation on the etched surface. By varying the plasma treatment conditions including feed gas composition, environment gaseous composition, and treatment distance, we find that short lived species, especially atomic O for Ar/1% O 2 and 1% air plasma and OH for Ar/1% H 2 O plasma, play an essential role for polymer etching. For O 2 containing plasma, we find that atomic O initiates polymer etching and the etching depth mirrors the measured decay of O atoms in the gas phase as the nozzle-surface distance increases. The etching reaction probability of an O atom ranging from 10 −4 to 10 −3 is consistent with low pressure plasma research. We also find that adding O 2 and H 2 O simultaneously into Ar feed gas quenches polymer etching compared to adding them separately which suggests the reduction of O and OH density in Ar/O 2 /H 2 O plasma. (letter)

  13. Removal torque and histomorphometric evaluation of bioceramic grit-blasted/acid-etched and dual acid-etched implant surfaces: an experimental study in dogs.

    Science.gov (United States)

    Marin, Charles; Granato, Rodrigo; Suzuki, Marcelo; Gil, Jose N; Piattelli, Adriano; Coelho, Paulo G

    2008-10-01

    Surface modifications to dental implants have been used in an attempt to accelerate the osseointegration process. The objective of this study was to biomechanically/histomorphometrically evaluate a bioceramic grit-blasted and acid-etched surface (BGB/AA; test) versus a dual acid-etched implant surface (control) in a beagle dog model. Control and BGB/AA implants were subjected to a series of physicochemical characterization tools, including scanning electron microscopy (SEM), atomic force microscopy (AFM), and auger photoelectron spectroscopy (APS). The animal model included the placement of 72 implants along the proximal tibiae of six beagle dogs, which remained in place for 2 or 4 weeks. After euthanization, half of the specimens were biomechanically tested (removal torque), and the other half was non-decalcified processed to slides of approximately 30 microm thickness for histomorphologic and histomorphometric (percentage of bone-to-implant contact [%BIC]) evaluation. Analysis of variance at the 95% confidence level and the Tukey post hoc test were used for multiple comparisons. SEM and AFM showed that surface microtextures were qualitatively and quantitatively different and that the BGB/AA surface presented higher submicrometer average roughness values (R(a)) and root mean square (RMS) values compared to control surfaces. Ca and P were detected at the BGB/AA surface by APS. Higher degrees of bone organization were observed along the perimeter of the BGB/AA surface compared to control, despite the non-significant differences in %BIC between the surfaces (P >0.25). Significantly higher removal torque was observed for the BGB/AA implants at both time periods (P BGB/AA surface compared to the dual-acid etched surface.

  14. Synchrotron photoemission spectroscopy study of ammonium hydroxide etching to prepare well-ordered GaAs(1 0 0) surfaces

    International Nuclear Information System (INIS)

    Lebedev, Mikhail V.; Ensling, David; Hunger, Ralf; Mayer, Thomas; Jaegermann, Wolfram

    2004-01-01

    Synchrotron-induced photoelectron spectroscopy was used to investigate the native-oxide-covered GaAs(1 0 0) surface and changes induced by etching with aqueous ammonia solution and by annealing in vacuum. The etching step removes arsenic and gallium oxides from the surface and the surface gets covered by elemental arsenic and tiny amounts of gallium suboxide. The surface oxygen content is reduced by an order of magnitude after etching, whereas the surface carbon content is somewhat increased. Annealing of this surface at 450 deg. C results in the disappearance of elemental arsenic and a considerable decrease in surface carbon and oxygen contents. The valence band spectra exhibit clear features typical for As-terminated GaAs(1 0 0) surfaces, as also obtained after As decapping

  15. Characterization of electric discharge machining, subsequent etching and shot-peening as a surface treatment for orthopedic implants

    Science.gov (United States)

    Stráský, Josef; Havlíková, Jana; Bačáková, Lucie; Harcuba, Petr; Mhaede, Mansour; Janeček, Miloš

    2013-09-01

    Presented work aims at multi-method characterization of combined surface treatment of Ti-6Al-4V alloy for biomedical use. Surface treatment consists of consequent use of electric discharge machining (EDM), acid etching and shot peening. Surface layers are analyzed employing scanning electron microscopy and energy dispersive X-ray spectroscopy. Acid etching by strong Kroll's reagent is capable of removing surface layer of transformed material created by EDM. Acid etching also creates partly nanostructured surface and significantly contributes to the enhanced proliferation of the bone cells. The cell growth could be positively affected by the superimposed bone-inspired structure of the surface with the morphological features in macro-, micro- and nano-range. Shot peening significantly improves poor fatigue performance after EDM. Final fatigue performance is comparable to benchmark electropolished material without any adverse surface effect. The proposed three-step surface treatment is a low-cost process capable of producing material that is applicable in orthopedics.

  16. Effect of surface etching on the oxidation behavior of plasma chromizing-treated AISI440B stainless steel

    Science.gov (United States)

    Meng, T. X.; Guo, Q.; Xi, W.; Ding, W. Q.; Liu, X. Z.; Lin, N. M.; Yu, S. W.; Liu, X. P.

    2018-03-01

    Double glow plasma surface alloying was applied to prepare chromizing layer in the surface of AISI440B stainless steel. Prior to chromizing, the stainless steel was etched by microwave plasma chemical vapor deposition to change the surface morphology and composition, and then heated for chromizing at 950 °C for 3 h. The cyclical oxidation of steel after chromizing was carried out at 900 °C for 100 h. Scanning electron microscopy, glow discharge optical emission spectrometer and X-ray diffractometer were used to characterize microstructure, composition and phase structure of alloyed and oxidized samples. The results show that the surface was composed of the Cr-rich top layer and Cr23C6, Cr7C3 and {Cr,Fe}7C3 below layer after chromizing. The bonding between the chromizing layer and the substrate after etching treatment was obviously strengthened. AISI440B steel shows a poor oxidation resistance and the weight gain oxidized for 100 h was up to 31.1 mg/cm2. Weight gains for chromizing and etching + chromizing treated samples were 0.67 mg/cm2 and 8 mg/cm2, respectively. Both oxidized surfaces of chromizing and etching + chromizing were composed of Cr2O3, but the oxide scale of etching + chromizing treated samples was more compact than that of samples without etching.

  17. Torque Analysis of a Triple Acid-Etched Titanium Implant Surface

    Science.gov (United States)

    Pontes, Ana Emília Farias; de Toledo, Cássio Torres; Garcia, Valdir Gouveia; Ribeiro, Fernando Salimon; Sakakura, Celso Eduardo

    2015-01-01

    The present study aimed to evaluate the removal torque of titanium implants treated with triple acid etching. Twenty-one rats were used in this study. For all animals, the tibia was prepared with a 2 mm drill, and a titanium implant (2 × 4 mm) was inserted after treatment using the subtraction method of triple acid etching. The flaps were sutured. Seven animals were killed 14, 28, and 63 days after implant installation, and the load necessary for removing the implant from the bone was evaluated by using a torque meter. The torque values were as follows: 3.3 ± 1.7 Ncm (14 days), 2.2 ± 1.3 Ncm (28 days), and 6.7 ± 1.4 Ncm (63 days). The torque value at the final healing period (63 days) was statistically significantly different from that at other time points tested (ANOVA, p = 0.0002). This preliminary study revealed that treatment with triple acid etching can create a promising and efficient surface for the process of osseointegration. PMID:26543898

  18. Ultrastructure of the surface of dental enamel with molar incisor hypomineralization (MIH) with and without acid etching.

    Science.gov (United States)

    Bozal, Carola B; Kaplan, Andrea; Ortolani, Andrea; Cortese, Silvina G; Biondi, Ana M

    2015-01-01

    The aim of the present work was to analyze the ultrastructure and mineral composition of the surface of the enamel on a molar with MIH, with and without acid etching. A permanent tooth without clinical MIH lesions (control) and a tooth with clinical diagnosis of mild and moderate MIH, with indication for extraction, were processed with and without acid etching (H3PO4 37%, 20") for observation with scanning electron microscope (SEM) ZEISS (Supra 40) and mineral composition analysis with an EDS detector (Oxford Instruments). The control enamel showed normal prismatic surface and etching pattern. The clinically healthy enamel on the tooth with MIH revealed partial loss of prismatic pattern. The mild lesion was porous with occasional cracks. The moderate lesion was more porous, with larger cracks and many scales. The mineral composition of the affected surfaces had lower Ca and P content and higher O and C. On the tooth with MIH, even on normal looking enamel, the demineralization does not correspond to an etching pattern, and exhibits exposure of crystals with rods with rounded ends and less demineralization in the inter-prismatic spaces. Acid etching increased the presence of cracks and deep pores in the adamantine structure of the enamel with lesion. In moderate lesions, the mineral composition had higher content of Ca, P and Cl. Enamel with MIH, even on clinically intact adamantine surfaces, shows severe alterations in the ultrastructure and changes in ionic composition, which affect the acid etching pattern and may interfere with adhesion.

  19. Effect of Surface Treatment on Enamel Cracks after Orthodontic Bracket Debonding: Er,Cr:YSGG Laser-Etching versus Acid-Etching

    Directory of Open Access Journals (Sweden)

    Hassanali Ghaffari

    2017-12-01

    Full Text Available Objectives: This study sought to compare enamel cracks after orthodontic bracket debonding in the surfaces prepared with erbium, chromium: yttrium-scandium-gallium-garnet (Er,Cr:YSGG laser and the conventional acid-etching technique.Materials and Methods: This in-vitro experimental study was conducted on 60 sound human premolars extracted for orthodontic purposes. The teeth were randomly divided into two groups (n=30. The teeth in group A were etched with 37% phosphoric acid gel, while the teeth in group B were subjected to Er,Cr:YSGG laser irradiation (gold handpiece, MZ8 tip, 50Hz, 4.5W, 60µs, 80% water and 60% air. Orthodontic brackets were bonded to the enamel surfaces and were then debonded in both groups. The samples were inspected under a stereomicroscope at ×38 magnification to assess the number and length of enamel cracks before bonding and after debonding. Independent-samples t-test was used to compare the frequency of enamel cracks in the two groups. Levene’s test was applied to assess the equality of variances.Results: No significant difference was noted in the frequency or length of enamel cracks between the two groups after debonding (P>0.05.Conclusions: Despite the same results of the frequency and length of enamel cracks in the two groups and by considering the side effects of acid-etching (demineralization and formation of white spot lesions, Er,Cr:YSGG laser may be used as an alternative to acid-etching for enamel surface preparation prior to bracket bonding.  

  20. Analysis of naturally etched surface of brass sheathing from a nineteenth-century shipwreck

    Directory of Open Access Journals (Sweden)

    Ashkenazi D.

    2018-01-01

    Full Text Available The Akko Tower Wreck is ently the remains of a 25-m-long merchant brig, dated to the first half of the nineteenth century. During the 2015 underwater excavation, a piece of brass sheet was retrieved from the shipwreck and its surface and bulk were examined by metallurgical analyses. The examinations revealed a unique example of almost two hundred years’ natural etching, which took place in the sea underwater environment. The surface of the sheet was covered with different copper and zinc oxides, which were identified by XRD analysis. Observation of the naturally etched surface with multi-focal light microscopy and SEM-EDS analysis indicated a microstructure of annealed α-brass, similar to that of its bulk. S-OES chemical analysis of the bulk revealed a composition of 65.0 wt% Cu, 34.4 wt% Zn and 0.6 wt% Pb. Based on the thickness of the sheet and its good state of preservation, it is suggested that it was used as sheathing to protect the hull against marine organisms, and to improve the sailing qualities of the ship. The results provide further information about the Akko Tower shipwreck; and expand our knowledge regarding the corrosion processes and preservation of brass during a long burial period in marine environments.

  1. Investigation of acid-etched CO2 laser ablated enamel surfaces using polarization sensitive optical coherence tomography

    Science.gov (United States)

    Nahm, Byung J.; Kang, Hobin; Chan, Kenneth; Fried, Daniel

    2012-01-01

    A carbon dioxide laser operating at the highly absorbed wavelength of 9.3μm with a pulse duration of 10-15μs is ideally suited for caries removal and caries prevention. The enamel thermally modified by the laser has enhanced resistance to acid dissolution. This is an obvious advantage for caries prevention; however, it is often necessary to etch the enamel surface to increase adhesion to composite restorative materials and such surfaces may be more resistant to etching. The purpose of the study was to non-destructively measure the susceptibility of laser-ablated enamel surfaces to acid dissolution before and after acid-etching using Polarization Sensitive Optical Coherence Tomography (PS-OCT). PS-OCT was used to acquire images of bovine enamel surfaces after exposure to laser irradiation at ablative fluence, acid-etching, and a surface softened dissolution model. The integrated reflectivity from lesion and the lesion depth were measured using PS-OCT. Samples were also sectioned for examination by Polarized Light Microscopy (PLM). PS-OCT images showed that acid-etching greatly accelerated the formation of subsurface lesions on both laser-irradiated and non-irradiated surfaces (Plaser modified enamel layer after 5-10 seconds.

  2. Dry Phosphorus silicate glass etching and surface conditioning and cleaning for multi-crystalline silicon solar cell processing

    International Nuclear Information System (INIS)

    Kagilik, Ahmed S.

    2014-01-01

    As an alternative to the wet chemical etching method, dry chemical etching processes for Phosphorus silicate glass [PSG} layer removal using Trifluormethane/Sulfur Hexafluoride (CHF 3 / SF 6 ) gas mixture in commercial silicon-nitride plasma enhanced chemical vapour deposition (SiN-PECVD) system is applied. The dependence of the solar cell performance on the etching temperature is investigated and optimized. It is found that the SiN-PECVD system temperature variation has a significant impact on the whole solar cell characteristics. A dry plasma cleaning treatment of the Si wafer surface after the PSG removal step is also investigated and developed. The cleaning step is used to remove the polymer film which is formed during the PSG etching using both oxygen and hydrogen gases. By applying an additional cleaning step, the polymer film deposited on the silicon wafer surface after PSG etching is eliminated. The effect of different plasma cleaning conditions on solar cell performance is investigated. After optimization of the plasma operating conditions, the performance of the solar cell is improved and the overall gain in efficiency of 0.6% absolute is yielded compared to a cell without any further cleaning step. On the other hand, the best solar cell characteristics can reach values close to that achieved by the conventional wet chemical etching processes demonstrating the effectiveness of the additional O 2 /H 2 post cleaning treatment.(author)

  3. Aqueous bromine etching of InP: a specific surface chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Causier, A.; Bouttemy, M.; Gerard, I.; Aureau, D.; Vigneron, J.; Etcheberry, A. [Institut Lavoisier de Versailles, Versailles-Saint-Quentin University, UMR CNRS 8180, 45 Av. des Etats-Unis, 78035 Versailles (France)

    2012-06-15

    The n -InP behaviour in HBr (0.1-1.0 M)/Br{sub 2} (1.25 x 10{sup -2}M) aqueous solutions is studied by AAS, XPS and SEM-FEG. Indium AAS-titrations of the HBr/Br{sub 2} solutions demonstrate that InP undergoes an etching mechanism whatever the HBr/Br{sub 2} formulation. The etching process is always linear with time but its rate depends on the HBr concentration. XPS analyses permit to link the apparent slow-down of the dissolution process when decreasing the HBr molarity from 1.0 M to 0.1 M to the presence of a mixed (In,P){sub ox} oxide layer on the surface. Therefore, the dissolution process of InP in HBr/Br{sub 2} solution appears to be ruled by the surface chemical state (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Synthesis and characterization of hybrid micro/nano-structured NiTi surfaces by a combination of etching and anodizing

    International Nuclear Information System (INIS)

    Huan, Z; Fratila-Apachitei, L E; Apachitei, I; Duszczyk, J

    2014-01-01

    The purpose of this study was to generate hybrid micro/nano-structures on biomedical nickel–titanium alloy (NiTi). To achieve this, NiTi surfaces were firstly electrochemically etched and then anodized in fluoride-containing electrolyte. With the etching process, the NiTi surface was micro-roughened through the formation of micropits uniformly distributed over the entire surface. Following the subsequent anodizing process, self-organized nanotube structures enriched in TiO 2 could be superimposed on the etched surface under specific conditions. Furthermore, the anodizing treatment significantly reduced water contact angles and increased the surface free energy compared to the surfaces prior to anodizing. The results of this study show for the first time that it is possible to create hybrid micro/nano-structures on biomedical NiTi alloys by combining electrochemical etching and anodizing under controlled conditions. These novel structures are expected to significantly enhance the surface biofunctionality of the material when compared to conventional implant devices with either micro- or nano-structured surfaces. (paper)

  5. Synthesis and characterization of hybrid micro/nano-structured NiTi surfaces by a combination of etching and anodizing.

    Science.gov (United States)

    Huan, Z; Fratila-Apachitei, L E; Apachitei, I; Duszczyk, J

    2014-02-07

    The purpose of this study was to generate hybrid micro/nano-structures on biomedical nickel-titanium alloy (NiTi). To achieve this, NiTi surfaces were firstly electrochemically etched and then anodized in fluoride-containing electrolyte. With the etching process, the NiTi surface was micro-roughened through the formation of micropits uniformly distributed over the entire surface. Following the subsequent anodizing process, self-organized nanotube structures enriched in TiO2 could be superimposed on the etched surface under specific conditions. Furthermore, the anodizing treatment significantly reduced water contact angles and increased the surface free energy compared to the surfaces prior to anodizing. The results of this study show for the first time that it is possible to create hybrid micro/nano-structures on biomedical NiTi alloys by combining electrochemical etching and anodizing under controlled conditions. These novel structures are expected to significantly enhance the surface biofunctionality of the material when compared to conventional implant devices with either micro- or nano-structured surfaces.

  6. Morphology and chemical termination of HF-etched Si{sub 3}N{sub 4} surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Li-Hong; Debenedetti, William J. I.; Peixoto, Tatiana; Gokalp, Sumeyra; Shafiq, Natis; Veyan, Jean-François; Chabal, Yves J., E-mail: chabal@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Michalak, David J.; Hourani, Rami [Components Research, Intel Corporation, Hillsboro, Oregon 97124 (United States)

    2014-12-29

    Several reports on the chemical termination of silicon nitride films after HF etching, an important process in the microelectronics industry, are inconsistent claiming N-H{sub x}, Si-H, or fluorine termination. An investigation combining infrared and x-ray photoelectron spectroscopies with atomic force and scanning electron microscopy imaging reveals that under some processing conditions, salt microcrystals are formed and stabilized on the surface, resulting from products of Si{sub 3}N{sub 4} etching. Rinsing in deionized water immediately after HF etching for at least 30 s avoids such deposition and yields a smooth surface without evidence of Si-H termination. Instead, fluorine and oxygen are found to terminate a sizeable fraction of the surface in the form of Si-F and possibly Si-OH bonds. The relatively unique fluorine termination is remarkably stable in both air and water and could lead to further chemical functionalization pathways.

  7. Bi-stage time evolution of nano-morphology on inductively coupled plasma etched fused silica surface caused by surface morphological transformation

    Science.gov (United States)

    Jiang, Xiaolong; Zhang, Lijuan; Bai, Yang; Liu, Ying; Liu, Zhengkun; Qiu, Keqiang; Liao, Wei; Zhang, Chuanchao; Yang, Ke; Chen, Jing; Jiang, Yilan; Yuan, Xiaodong

    2017-07-01

    In this work, we experimentally investigate the surface nano-roughness during the inductively coupled plasma etching of fused silica, and discover a novel bi-stage time evolution of surface nano-morphology. At the beginning, the rms roughness, correlation length and nano-mound dimensions increase linearly and rapidly with etching time. At the second stage, the roughening process slows down dramatically. The switch of evolution stage synchronizes with the morphological change from dual-scale roughness comprising long wavelength underlying surface and superimposed nano-mounds to one scale of nano-mounds. A theoretical model based on surface morphological change is proposed. The key idea is that at the beginning, etched surface is dual-scale, and both larger deposition rate of etch inhibitors and better plasma etching resistance at the surface peaks than surface valleys contribute to the roughness development. After surface morphology transforming into one-scale, the difference of plasma resistance between surface peaks and valleys vanishes, thus the roughening process slows down.

  8. Surface chemistry of InP ridge structures etched in Cl{sub 2}-based plasma analyzed with angular XPS

    Energy Technology Data Exchange (ETDEWEB)

    Bouchoule, Sophie, E-mail: sophie.bouchoule@lpn.cnrs.fr; Cambril, Edmond; Guilet, Stephane [Laboratoire de Photonique et Nanostructure (LPN)—UPR20, CNRS, Route de Nozay, 91460 Marcoussis (France); Chanson, Romain; Pageau, Arnaud; Rhallabi, Ahmed; Cardinaud, Christophe, E-mail: christophe.cardinaud@cnrs-imn.fr [Institut des matériaux Jean Rouxel (IMN), UMR6502, Université de Nantes, CNRS, 44322 Nantes (France)

    2015-09-15

    Two x-ray photoelectron spectroscopy configurations are proposed to analyze the surface chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled plasma (ICP). Either a classical or a grazing configuration allows to retrieve information about the surface chemistry of the bottom surface and sidewalls of the etched features. The procedure is used to study the stoichiometry of the etched surface as a function of ridge aspect ratio for Cl{sub 2}/Ar and Cl{sub 2}/H{sub 2} plasma chemistries. The results show that the bottom surface and the etched sidewalls are P-rich, and indicate that the P-enrichment mechanism is rather chemically driven. Results also evidence that adding H{sub 2} to Cl{sub 2} does not necessarily leads to a more balanced surface stoichiometry. This is in contrast with recent experimental results obtained with the HBr ICP chemistry for which fairly stoichiometric surfaces have been obtained.

  9. Effects of etching time on the bottom surface morphology of ultrathin porous alumina membranes for use as masks

    Science.gov (United States)

    Yang, Sun A.; Choi, Yong Chan; Bu, Sang Don

    2012-11-01

    We investigated the effect of etching time on the bottom surface morphologies of ultrathin porous alumina membranes (UT-PAMs) anodized in oxalic and phosphoric acid. The morphology of the bottom surface clearly changed and a unique surface undulation was observed during the etching process. Such an undulation regarding the bottom surface is attributed to the different etching rates between the dome-shaped barrier layer and the hexagonal cell walls. The results suggest that the bottom morphology of UT-PAMs formed after the barrier layer is opened significantly affects the contact area of the bottom side with the substrate. During the initial stage of the opening process for the barrier layer, the porous section will contact the substrate rather than the walls. However, as the etching time increases, the height of the porous section becomes considerably lower than that of the walls, which means that the walls will contact the substrate with a gap between the pores and the substrate. Based on our experimental results, we propose a possible schematic diagram describing the effects of UT-PAMs with differently-shaped bottom surfaces on the shapes of fabricated nanodots when the UT-PAMs are used as masks.

  10. Coating and dispersion of ceramic nanoparticles by UV-ozone etching assisted surface-initiated living radical polymerization.

    Science.gov (United States)

    Arita, Toshihiko

    2010-10-01

    Commercially available unmodified ceramic nanoparticles (NPs) in dry powder state were surface-modified and dispersed in almost single-crystal size. The surface-initiated living radical polymerization after just UV-ozone soft etching enables one to graft polymers onto the surface of ceramic NPs and disperse them in solvents. Furthermore, a number of NPs were dispersed with single-crystal sizes. The technique developed here could be applied to almost all ceramic NPs including metal nitrides.

  11. Ionic self-assembly of porphyrin nanostructures on the surface of charge-altered track-etched membranes

    CSIR Research Space (South Africa)

    Mongwaketsi, N

    2010-01-01

    Full Text Available and Sn(IV) tetrakis(4-pyridyl)porphyrin were used to synthesize ionic self-assembled porphyrin nanorods. The track-etched membranes surface charge was changed from negative to positive using polyethyleneimine. The porphyrin nanorods were either filtered...

  12. Micro-morphology of single crystalline silicon surfaces during anisotropic wet chemical etching in KOH: velocity source forests

    NARCIS (Netherlands)

    van Veenendaal, E.; Sato, K.; Shikida, M.; Shikida, M.; Nijdam, A.J.; van Suchtelen, J.

    2001-01-01

    For silicon etched in KOH the micro-morphology of any surface, no matter the crystallographic orientation, is defined by some sort of persistent corrugations. As a matter of principle, the occurrence of these corrugations is incompatible with the classical kinematic wave theory for the evolution of

  13. The influence of the chemical and physical component of the plasma etching of the surface of gallium arsenide on the etching rate in the chloride plasma of the combined discharge

    Science.gov (United States)

    Klimin, V. S.; Tominov, R. V.; Eskov, A. V.; Krasnoborodko, S. Y.; Ageev, O. A.

    2017-11-01

    In this paper, experimental studies were carried out on the formation of a microrelief on the surface of gallium arsenide substrates. The surface was modified by the method of plasma etching. Etching was carried out in a medium of chloride gas. In the work, the etching rates of the surface of gallium arsenide depend on the power of the inductively coupled plasma source. The etching rate of gallium arsenide was 28.2 nm / min, 24.9 nm / min, 27.8 nm / min, at inductively coupled plasma power values of 200 W, 400 W and 600 W. In the same work, the patterns of etching rate of gallium arsenide surface Taking into account the capacity of the capacitive plasma and the voltage of the shift. The etching rate of gallium arsenide was 516.7 nm / min, 559.5 nm / min, 603.3 nm / min, with capacitive plasma power values of 10 W, 35 W and 70 W, respectively. These results can be used to form a modified surface for the subsequent epitaxial growth of quantum dots based on gallium arsenide.

  14. Design of an oval-form cathode for the precision etching process of e-paper surface

    International Nuclear Information System (INIS)

    Pa, P.S.

    2009-01-01

    A newly designed oval-form cathode using electroetching for indium-tin-oxide (ITO) microstructure removal from the surface of e-paper polymer PET films is presented. Through ultra-precise microstructural etching, the semiconductor industry can effectively reclaim defective products, thereby reducing production costs. The design features for the ITO removal process and the tool design of oval-form cathodes are of significant interest. A smaller oval-form cathode minor axis, a higher cathode rotational speed, a higher concentration, or a higher electrolyte temperature corresponds to a higher ITO etching rate.

  15. Wafer Surface Charge Reversal as a Method of Simplifying Nanosphere Lithography for Reactive Ion Etch Texturing of Solar Cells

    Directory of Open Access Journals (Sweden)

    Daniel Inns

    2007-01-01

    Full Text Available A simplified nanosphere lithography process has been developed which allows fast and low-waste maskings of Si surfaces for subsequent reactive ion etching (RIE texturing. Initially, a positive surface charge is applied to a wafer surface by dipping in a solution of aluminum nitrate. Dipping the positive-coated wafer into a solution of negatively charged silica beads (nanospheres results in the spheres becoming electrostatically attracted to the wafer surface. These nanospheres form an etch mask for RIE. After RIE texturing, the reflection of the surface is reduced as effectively as any other nanosphere lithography method, while this batch process used for masking is much faster, making it more industrially relevant.

  16. Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Dunaev, A. V., E-mail: dunaev-80@mail.ru; Murin, D. B.; Pivovarenok, S. A. [Ivanovo State University of Chemistry and Technology (Russian Federation)

    2016-02-15

    The quality of the surface of a semiconductor structure after plasma-chemical etching in plasma of HCl/Ar, HCl/Cl{sub 2}, HCl/H{sub 2} mixtures, and freon R12 plasma is studied. It is shown that the optimal combination of the etch rate and surface roughness is achieved in the hydrogen chloride and argon mixture. In mixtures with hydrogen, the etch rates are too low for high surface quality; in mixtures with chlorine, the surface roughness exceeds technologically acceptable values due to high etch rates. The high-frequency discharge in freon R12 can be effectively used to etch semiconductors, providing technologically acceptable interaction rates, while retaining a uniform and clean surface.

  17. Surface modification of Y3Al5O12:Ce3+ phosphor by hydrofluoric acid wet etching

    International Nuclear Information System (INIS)

    He, Zhijiang; Cheng, Weihai; Li, Zebin; Liu, Ying; Ou, Qiongrong; Liang, Rongqing

    2013-01-01

    The surface of Y 3 Al 5 O 12 :Ce 3+ phosphor prepared by solid-state reaction was modified by hydrofluoric acid wet etching. The SEM pictures show that the edge-angles-rich surface of the phosphor particles becomes smooth and the XRD spectra show that the surface crystallinity is improved after modification for more than 3 h. Consequently, the photoluminescence emission from phosphor particles with smooth surface presents a higher quantum yield (increased by 5.5%) than that without modification, and a lower backscattering light by the smoothed phosphor particles is also found, which suggests better surface characteristics of light absorption, transparency and crystallinity. -- Highlights: ► HF wet etching way is introduced to modify the YAG phosphor surface for the first time. ► The surface with riched edge angles has become smooth. ► The photoluminescence emission intensity is increased by 5.5%. ► The backscattering light intensity is obviously decreased. ► The wet etching method with HF is appropriate for mass process

  18. Biomimetic hydrophobic surface fabricated by chemical etching method from hierarchically structured magnesium alloy substrate

    International Nuclear Information System (INIS)

    Liu, Yan; Yin, Xiaoming; Zhang, Jijia; Wang, Yaming; Han, Zhiwu; Ren, Luquan

    2013-01-01

    As one of the lightest metal materials, magnesium alloy plays an important role in industry such as automobile, airplane and electronic product. However, magnesium alloy is hindered due to its high chemical activity and easily corroded. Here, inspired by typical plant surfaces such as lotus leaves and petals of red rose with super-hydrophobic character, the new hydrophobic surface is fabricated on magnesium alloy to improve anti-corrosion by two-step methodology. The procedure is that the samples are processed by laser first and then immersed and etched in the aqueous AgNO 3 solution concentrations of 0.1 mol/L, 0.3 mol/L and 0.5 mol/L for different times of 15 s, 40 s and 60 s, respectively, finally modified by DTS (CH 3 (CH 2 ) 11 Si(OCH 3 ) 3 ). The microstructure, chemical composition, wettability and anti-corrosion are characterized by means of SEM, XPS, water contact angle measurement and electrochemical method. The hydrophobic surfaces with microscale crater-like and nanoscale flower-like binary structure are obtained. The low-energy material is contained in surface after DTS treatment. The contact angles could reach up to 138.4 ± 2°, which hydrophobic property is both related to the micro–nano binary structure and chemical composition. The results of electrochemical measurements show that anti-corrosion property of magnesium alloy is improved. Furthermore, our research is expected to create some ideas from natural enlightenment to improve anti-corrosion property of magnesium alloy while this method can be easily extended to other metal materials.

  19. Biomimetic hydrophobic surface fabricated by chemical etching method from hierarchically structured magnesium alloy substrate

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yan; Yin, Xiaoming; Zhang, Jijia [Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun 130022 (China); Wang, Yaming [Institute for Advanced Ceramics, Harbin Institute of Technology, Harbin 150001 (China); Han, Zhiwu, E-mail: zwhan@jlu.edu.cn [Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun 130022 (China); Ren, Luquan [Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun 130022 (China)

    2013-09-01

    As one of the lightest metal materials, magnesium alloy plays an important role in industry such as automobile, airplane and electronic product. However, magnesium alloy is hindered due to its high chemical activity and easily corroded. Here, inspired by typical plant surfaces such as lotus leaves and petals of red rose with super-hydrophobic character, the new hydrophobic surface is fabricated on magnesium alloy to improve anti-corrosion by two-step methodology. The procedure is that the samples are processed by laser first and then immersed and etched in the aqueous AgNO{sub 3} solution concentrations of 0.1 mol/L, 0.3 mol/L and 0.5 mol/L for different times of 15 s, 40 s and 60 s, respectively, finally modified by DTS (CH{sub 3}(CH{sub 2}){sub 11}Si(OCH{sub 3}){sub 3}). The microstructure, chemical composition, wettability and anti-corrosion are characterized by means of SEM, XPS, water contact angle measurement and electrochemical method. The hydrophobic surfaces with microscale crater-like and nanoscale flower-like binary structure are obtained. The low-energy material is contained in surface after DTS treatment. The contact angles could reach up to 138.4 ± 2°, which hydrophobic property is both related to the micro–nano binary structure and chemical composition. The results of electrochemical measurements show that anti-corrosion property of magnesium alloy is improved. Furthermore, our research is expected to create some ideas from natural enlightenment to improve anti-corrosion property of magnesium alloy while this method can be easily extended to other metal materials.

  20. Etch rate and surface morphology of polycrystalline beta-silicon carbide using chlorine trifluoride gas

    OpenAIRE

    Habuka, Hitoshi; Oda, S.; Fukai, Y.; Fukae, K.; Takeuchi, T.; Aihara, M.

    2006-01-01

    Etch rates of polycrystalline beta-silicon carbide (SiC) substrate in a wide range from less than one to more than 10 mu m/min are obtained using chlorine trifluoride gas in ambient nitrogen at 673-973 K and atmospheric pressure in a horizontal reactor. Over the chlorine trifluoride gas concentrations of 10-100% used in this study, the etch rate increases at the substrate temperatures between 673 and 773 K. Additionally, the etch rate at temperatures higher than 773 K is independent of the su...

  1. Silicon etch process

    International Nuclear Information System (INIS)

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  2. Field evidences of secondary surface ruptures occurred during the ...

    Indian Academy of Sciences (India)

    Some rock slides of several tens of meters in size that obviously require significantly high ground shaking were also developed on steep fault scarps. The orientation of the principal stress tensor as deduced from the surface rupture of the Eskisehir earthquake displays clear inconsistency with the geometry of prominent ...

  3. Field evidences of secondary surface ruptures occurred during the ...

    Indian Academy of Sciences (India)

    The orientation of the principal stress tensor as deduced from the surface rupture of the Eskisehir earthquake ... history extended back to late Oligocene exhuma- tion of the Uludag massif (Okay et al 2008) and the ensuing ... accepted this view estimating stress directions from slip measurements in the main bounding faults.

  4. Field evidences of secondary surface ruptures occurred during the ...

    Indian Academy of Sciences (India)

    Surface rupture and source fault of the 20 February 1956 Eskişehir earthquake have been a matter of debate that potentially contributes towards the understanding of the active deformation and seismic risk in the highly populated NW Anatolia. Field observations on the two fault segments (namely Kavacık and Uludere ...

  5. Histomorphometric evaluation of a dual acid-etched vs. a chemically modified hydrophilic dual acid-etched implant surface. An experimental study in dogs.

    Science.gov (United States)

    de Jesus, Rainde Naiara Rezende; Stavropoulos, Andreas; Oliveira, Maiolino Thomaz Fonseca; Soares, Priscilla Barbosa Ferreira; Moura, Camilla Christian Gomes; Zanetta-Barbosa, Darceny

    2017-05-01

    The aim of this preclinical in vivo study was to compare histologically and histomorphometrically osseointegration of dual acid-etched vs. hydrophilic implants. Two pairs of implants (Neodent, Curitiba, Brazil), with same macrogeometry but different surface technology (i) dual acid-etched surface (SAE) treatment with hydrochloric and sulfuric acid followed by microwave treatment and insertion in isotonic saline solution to increase hydrophilicity (SAE-HD) (test, n = 12); (ii) dual SAE (control, n = 12) were installed bilaterally in the proximal tibia of six beagle dogs. Histologic and histomorphometric evaluation was performed after 2 and 4 weeks in vivo, on non-decalcified sections. Percentages of bone-to-implant contact (BIC) and bone density (BD) were estimated and tested for significant differences with the Wilcoxon signed-rank test for paired samples (P < 0.05). In general, new bone formation along and in contact with the implant surface could be observed irrespective of the experimental group and observation period. Most of the bone was woven but small quantities of lamellar bone, mainly in close proximity to the cortex could also be observed. BIC at 2 weeks was 19.57 ± 13.57 and 20.33 ± 7.99 (P = 0.75), and at 4 weeks was 42.80 ± 14.48 and 40.25 ± 9.45 (P = 0.65) for SAE-HD and SAE implants respectively. BD at 2 weeks was 24.85 ± 16.31 and 25.66 ± 8.59 (P = 0.35) and at 4 weeks 44.13 ± 6.46 and 40.13 ± 6.46 (P = 0.25) for SAE-HD and SAE implants respectively. Bone-to-implant contact and BD increased with time in both SAE-HD and SAE implants. No significant differences were observed between the two different implant surfaces for any of the evaluated parameters and at any observation time-point. © 2016 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

  6. A process of glassy carbon etching without the micro masking effect for the fabrication of a mold with a high-quality surface

    Science.gov (United States)

    Youn, Sung-Won; Ueno, Akihisa; Takahashi, Masaharu; Maeda, Ryutaro

    2009-12-01

    The surface quality of a mold is one of the major factors in imprint lithography as it determines the final surface quality and the minimum size of the replicated patterns. This paper describes a process for O2-based reactive ion etching (RIE) of glassy carbon (GC) without encountering any micro masking effect. Glassy carbon, because of its attractive properties such as its surface inertness, thermal stability and extraordinary hardness, has drawn much interest as a mold material for high-temperature imprinting on glasses and metals. Etch profiles with highly smooth surfaces free of micro masking effects were achieved by adding SF6 to the etching gas. The fraction of SF6 in the gas mixture (ranging from 0.1 to 0.6) showed little change in the quality of the etched surface, but it did lead to a proportional decrease in the etch rate of GC. A reasonable GC etch rate (115-120 nm min-1) and a smooth etch surface were obtained using SF6 at a fraction 0.2 or below. Using electron beam lithography (EBL), and processing under the established SF6/O2 RIE conditions, GC molds were fabricated and successfully applied to thermal imprinting onto glass and metals.

  7. Influence of duration of phosphoric acid pre-etching on bond durability of universal adhesives and surface free-energy characteristics of enamel.

    Science.gov (United States)

    Tsujimoto, Akimasa; Barkmeier, Wayne W; Takamizawa, Toshiki; Watanabe, Hidehiko; Johnson, William W; Latta, Mark A; Miyazaki, Masashi

    2016-08-01

    The purpose of this study was to evaluate the influence of duration of phosphoric acid pre-etching on the bond durability of universal adhesives and the surface free-energy characteristics of enamel. Three universal adhesives and extracted human molars were used. Two no-pre-etching groups were prepared: ground enamel; and enamel after ultrasonic cleaning with distilled water for 30 s to remove the smear layer. Four pre-etching groups were prepared: enamel pre-etched with phosphoric acid for 3, 5, 10, and 15 s. Shear bond strength (SBS) values of universal adhesive after no thermal cycling and after 30,000 or 60,000 thermal cycles, and surface free-energy values of enamel surfaces, calculated from contact angle measurements, were determined. The specimens that had been pre-etched showed significantly higher SBS and surface free-energy values than the specimens that had not been pre-etched, regardless of the aging condition and adhesive type. The SBS and surface free-energy values did not increase for pre-etching times of longer than 3 s. There were no significant differences in SBS values and surface free-energy characteristics between the specimens with and without a smear layer. The results of this study suggest that phosphoric acid pre-etching of enamel improves the bond durability of universal adhesives and the surface free-energy characteristics of enamel, but these bonding properties do not increase for phosphoric acid pre-etching times of longer than 3 s. © 2016 Eur J Oral Sci.

  8. Surface changes of biopolymers PHB and PLLA induced by Ar{sup +} plasma treatment and wet etching

    Energy Technology Data Exchange (ETDEWEB)

    Slepičková Kasálková, N. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Slepička, P., E-mail: petr.slepicka@vscht.cz [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Sajdl, P. [Department of Power Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Švorčík, V. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic)

    2014-08-01

    Polymers, especially group of biopolymers find potential application in a wide range of disciplines due to their biodegradability. In biomedical applications these materials can be used as a scaffold or matrix. In this work, the influence of the Ar{sup +} plasma treatment and subsequent wet etching (acetone/water) on the surface properties of polymers were studied. Two biopolymers – polyhydroxybutyrate with 8% polyhydroxyvalerate (PHB) and poly-L-lactic acid (PLLA) were used in these experiments. Modified surface layers were analyzed by different methods. Surface wettability was characterized by determination of water contact angle. Changes in elemental composition of modified surfaces were performed by X-ray Photoelectron Spectroscopy (XPS). Surface morphology and roughness was examined using Atomic Force Microscopy (AFM). Gravimetry method was used to study the mass loss. It was found that the modification from both with plasma and wet etching leads to dramatic changes of surface properties (surface chemistry, morphology and roughness). Rate of changes of these features strongly depends on the modification parameters.

  9. Revealing the surface pattern of medieval pattern welded iron objects - etching tests conducted on reconstructed composites

    Czech Academy of Sciences Publication Activity Database

    Thiele, Á.; Hošek, Jiří; Haramza, M.; Török, B.

    2014-01-01

    Roč. 25, č. 1 (2014), s. 18-24 ISSN 1805-7241 R&D Projects: GA ČR GAP405/12/2289 Institutional support: RVO:67985912 Keywords : etching * pattern welding * phosphoric iron * archaeometallurgy Subject RIV: AC - Archeology, Anthropology, Ethnology

  10. The deconvolution of sputter-etching surface concentration measurements to determine impurity depth profiles

    International Nuclear Information System (INIS)

    Carter, G.; Katardjiev, I.V.; Nobes, M.J.

    1989-01-01

    The quasi-linear partial differential continuity equations that describe the evolution of the depth profiles and surface concentrations of marker atoms in kinematically equivalent systems undergoing sputtering, ion collection and atomic mixing are solved using the method of characteristics. It is shown how atomic mixing probabilities can be deduced from measurements of ion collection depth profiles with increasing ion fluence, and how this information can be used to predict surface concentration evolution. Even with this information, however, it is shown that it is not possible to deconvolute directly the surface concentration measurements to provide initial depth profiles, except when only ion collection and sputtering from the surface layer alone occur. It is demonstrated further that optimal recovery of initial concentration depth profiles could be ensured if the concentration-measuring analytical probe preferentially sampled depths near and at the maximum depth of bombardment-induced perturbations. (author)

  11. Chemical etching of Tungsten thin films for high-temperature surface acoustic wave-based sensor devices

    Energy Technology Data Exchange (ETDEWEB)

    Spindler, M., E-mail: m.spindler@ifw-dresden.de [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany); Herold, S.; Acker, J. [BTU Cottbus – Senftenberg, Faculty of Sciences, P.O. Box 101548, 01968 Senftenberg (Germany); Brachmann, E.; Oswald, S.; Menzel, S.; Rane, G. [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany)

    2016-08-01

    Surface acoustic wave devices are widely used as wireless sensors in different application fields. Recent developments aimed to utilize those devices as temperature sensors even in the high temperature range (T > 300 °C) and in harsh environmental conditions. Therefore, conventional materials, which are used for the substrate and for the interdigital transducer finger electrodes such as multilayers or alloys based on Al or Cu have to be exchanged by materials, which fulfill some important criteria regarding temperature related effects. Electron beam evaporation as a standard fabrication method is not well applicable for depositing high temperature stable electrode materials because of their very high melting points. Magnetron sputtering is an alternative deposition process but is also not applicable for lift-off structuring without any further improvement of the structuring process. Due to a relatively high Ar gas pressure of about 10{sup −1} Pa, the sidewalls of the photoresist line structures are also covered by the metallization, which subsequently prevents a successful lift-off process. In this study, we investigate the chemical etching of thin tungsten films as an intermediate step between magnetron sputtering deposition of thin tungsten finger electrodes and the lift-off process to remove sidewall covering for a successful patterning process of interdigital transducers. - Highlights: • We fabricated Tungsten SAW Electrodes by magnetron sputtering technology. • An etching process removes sidewall covering of photoresist, which allows lift-off. • Tungsten etching rates based on a hydrogen peroxide solutions were determined.

  12. Surface-Micromachined Neural Sensors with Integrated Double Side Recordings on Dry-Etch Benzocyclobutene(BCB) Substrate.

    Science.gov (United States)

    Zhu, Haixin; He, Jiping; Kim, Bruce

    2005-01-01

    a neural sensor with novel structure and capable of double side recordings has been designed and fabricated using surface micromachining technique. Dry-etch Benzocyclobutene (BCB) was selected as the substrate and packaging material for its excellent electrical, mechanical and thermal properties. Positive photoresist (AZ4620) was used as the sacrificial layer during the formation of backside recording sites, and the lift-off process combined with BCB dry etch technique was developed to open the recording sites on the backside. The finished device has intracortical recording sites on both sides, and also epidural recording sites on the front side. The total channel number doubled compared to that of single side electrode structure. Three dry-etch BCB layers were applied to insulate the front side conduction traces from the backside trace layer, and package the entire devices. The developed process shows reliable and high fabrication yield, and results suggest that this newly developed neural sensor could improve the performance and efficiency of neural recording.

  13. Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

    Energy Technology Data Exchange (ETDEWEB)

    Leonard, J. T., E-mail: jtleona01@gmail.com; Yonkee, B. P.; Cohen, D. A.; Megalini, L.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Lee, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2016-01-18

    We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to selectively remove the multi-quantum well (MQW) region outside the aperture area, defined by an opaque metal mask. This PEC aperture (PECA) creates an air-gap in the passive area of the device, allowing one to achieve efficient electrical confinement within the aperture, while simultaneously achieving a large index contrast between core of the device (the MQW within the aperture) and the lateral cladding of the device (the air-gap formed by the PEC etch), leading to strong lateral confinement. Scanning electron microscopy and focused ion-beam analysis is used to investigate the precision of the PEC etch technique in defining the aperture. The fabricated single mode PECA VCSEL shows a threshold current density of ∼22 kA/cm{sup 2} (25 mA), with a peak output power of ∼180 μW, at an emission wavelength of 417 nm. The near-field emission profile shows a clearly defined single linearly polarized (LP) mode profile (LP{sub 12,1}), which is in contrast to the filamentary lasing that is often observed in III-nitride VCSELs. 2D mode profile simulations, carried out using COMSOL, give insight into the different mode profiles that one would expect to be displayed in such a device. The experimentally observed single mode operation is proposed to be predominantly a result of poor current spreading in the device. This non-uniform current spreading results in a higher injected current at the periphery of the aperture, which favors LP modes with high intensities near the edge of the aperture.

  14. Microtensile bond strength of etch and rinse versus self-etch adhesive systems.

    Science.gov (United States)

    Hamouda, Ibrahim M; Samra, Nagia R; Badawi, Manal F

    2011-04-01

    The aim of this study was to compare the microtensile bond strength of the etch and rinse adhesive versus one-component or two-component self-etch adhesives. Twelve intact human molar teeth were cleaned and the occlusal enamel of the teeth was removed. The exposed dentin surfaces were polished and rinsed, and the adhesives were applied. A microhybride composite resin was applied to form specimens of 4 mm height and 6 mm diameter. The specimens were sectioned perpendicular to the adhesive interface to produce dentin-resin composite sticks, with an adhesive area of approximately 1.4 mm(2). The sticks were subjected to tensile loading until failure occurred. The debonded areas were examined with a scanning electron microscope to determine the site of failure. The results showed that the microtensile bond strength of the etch and rinse adhesive was higher than that of one-component or two-component self-etch adhesives. The scanning electron microscope examination of the dentin surfaces revealed adhesive and mixed modes of failure. The adhesive mode of failure occurred at the adhesive/dentin interface, while the mixed mode of failure occurred partially in the composite and partially at the adhesive/dentin interface. It was concluded that the etch and rinse adhesive had higher microtensile bond strength when compared to that of the self-etch adhesives. Copyright © 2010 Elsevier Ltd. All rights reserved.

  15. Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with silicon selectivity

    Science.gov (United States)

    Shoeb, Juline

    Plasma-surface interactions are very important in the fabrication of the nm-sized features of integrated circuits. Plasma processes are employed to produce high-resolution patterns in many of the thin layers of silicon integrated circuits and to remove masking layers while maintaining high selectivity. Integrated plasma processes consisting of sequential steps such as etch, clean and surface modification, are used in semiconductor industries. The surface in contact with the process plasma is exposed to the fluxes of neutrals, ions, molecules, electrons and photons. Modeling of surface reaction mechanisms requires the determination of the characterizations of fluxes (e.g. composition, magnitude, energy and angle) and development of the reaction mechanisms of the processes such as adsorption, reflection, bond breaking and etch product evolution, while reproducing the experimental results. When modeling the reaction mechanism for an entirely new material, the experimental data is often fragmentary. Therefore, fundamental principles such as bond energies and volatility of the etch products must be considered to develop the mechanism. In this thesis, results from a computational investigation of porous low-k SiCOH etching in fluorocarbon plasmas, damage during cleaning of CFx polymer etch residue in Ar/O2 and He/H2 plasmas, NH3 plasma pore sealing and low-k degradation due to water uptake, will be discussed. The plasma etching of HfO2 gate-stacks is also computationally investigated with an emphasis on the selectivity between HfO2 and Si.

  16. Formation of Micro- and Nanostructures on the Nanotitanium Surface by Chemical Etching and Deposition of Titania Films by Atomic Layer Deposition (ALD

    Directory of Open Access Journals (Sweden)

    Denis V. Nazarov

    2015-12-01

    Full Text Available In this study, an integrated approach was used for the preparation of a nanotitanium-based bioactive material. The integrated approach included three methods: severe plastic deformation (SPD, chemical etching and atomic layer deposition (ALD. For the first time, it was experimentally shown that the nature of the etching medium (acidic or basic Piranha solutions and the etching time have a significant qualitative impact on the nanotitanium surface structure both at the nano- and microscale. The etched samples were coated with crystalline biocompatible TiO2 films with a thickness of 20 nm by Atomic Layer Deposition (ALD. Comparative study of the adhesive and spreading properties of human osteoblasts MG-63 has demonstrated that presence of nano- and microscale structures and crystalline titanium oxide on the surface of nanotitanium improve bioactive properties of the material.

  17. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications

    KAUST Repository

    Alias, Mohd Sharizal

    2015-12-22

    The high optical gain and absorption of organic–inorganic hybrid perovskites have attracted attention for photonic device applications. However, owing to the sensitivity of organic moieties to solvents and temperature, device processing is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability and marginal surface damage compared to focused-ion beam (FIB) etching without precursors. Utilizing the GAFIB etching, we fabricated a uniform and periodic submicron perovskite subwavelength grating (SWG) absorber with broadband absorption and nanoscale precision. Our results demonstrate the use of FIB as a submicron patterning tool and a means of providing surface treatment (after FIB patterning to minimize optical loss) for perovskite photonic nanostructures. The SWG absorber can be patterned on perovskite solar cells to enhance the device efficiency through increasing light trapping and absorption.

  18. Mask-free surface structuring of micro- and nanocrystalline diamond films by reactive ion plasma etching

    Czech Academy of Sciences Publication Activity Database

    Domonkos, Mária; Ižák, Tibor; Babchenko, Oleg; Varga, Marián; Hruška, Karel; Kromka, Alexander

    2014-01-01

    Roč. 6, č. 7 (2014), s. 780-784 ISSN 2164-6627 R&D Projects: GA ČR GAP108/12/0910; GA ČR GAP108/12/0996; GA MPO FR-TI2/736 Institutional support: RVO:68378271 Keywords : micro- and nanocrystalline diamond * capacitively coupled plasma * reactive ion etching * nanostructuring * scanning electron microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism

  19. Surface effect of ultraviolet radiation on electrochemically etched alpha-particle tracks in PADC

    International Nuclear Information System (INIS)

    Ng, F.M.F.; Tse, K.C.C.; Nikezic, D.; Dai, Junfeng; Zhao, Ziqiang; Yu, K.N.

    2008-01-01

    The size of alpha-particle tracks on electrochemically etched ultraviolet-irradiated polyallyldiglycol carbonate (PADC) films were studied. PADC films were first irradiated with 3 MeV alpha particles and then pre-etched chemically using aqueous 6.25 N NaOH solution for 2 h. The films were then exposed to incoherent broad-band ultraviolet (UV) radiation provided by a mercury lamp for different durations up to 2 h. The films were then electrochemically etched in a 6.25 N NaOH solution, with an a.c. voltage of about 1200 V eff and a frequency of 5 kHz, for 2 h at room temperature. The mean sizes of the tracks (or trees) were measured and were found to increase for short UV exposures and decrease for prolonged UV exposures. The results can be explained by the dominance of chain scission at the beginning of UV exposure and the dominance of cross linking for prolonged UV exposure. This explanation is further supported by results from X-ray photo-electron spectroscopy (XPS). Here, the C-O-C bonds decrease for short UV exposures, which is explained by scission of the polymer chains, and increase again for prolonged UV exposure, which indicates cross linking. From nano-indentation measurements, the hardness and the reduced modulus increase monotonically with the UV irradiation. Apparently, these quantities only characterize the amount of cross linking, and do not give information on the initial scission process

  20. Collective evolution of submicron hillocks during the early stages of anisotropic alkaline wet chemical etching of Si(1 0 0) surfaces

    Science.gov (United States)

    Sana, P.; Vázquez, Luis; Cuerno, Rodolfo; Sarkar, Subhendu

    2017-11-01

    We address experimentally the large-scale dynamics of Si(1 0 0) surfaces during the initial stages of anisotropic wet (KOH) chemical etching, which are characterized through atomic force microscopy. These systems are known to lead to the formation of characteristic pyramids, or hillocks, of typical sizes in the nanometric/micrometer scales, thus with the potential for a large number of applications that can benefit from the nanotexturing of Si surfaces. The present pattern formation process is very strongly disordered in space. We assess the space correlations in such a type of rough surface and elucidate the existence of a complex and rich morphological evolution, featuring at least three different regimes in just 10 min of etching. Such a complex time behavior cannot be consistently explained within a single formalism for dynamic scaling. The pyramidal structure reveals itself as the basic morphological motif of the surface throughout the dynamics. A detailed analysis of the surface slope distribution with etching time reveals that the texturing process induced by the KOH etching is rather gradual and progressive, which accounts for the dynamic complexity. The various stages of the morphological evolution can be accurately reproduced by computer-generated surfaces composed by uncorrelated pyramidal structures. To reach such an agreement, the key parameters are the average pyramid size, which increases with etching time, its distribution and the surface coverage by the pyramidal structures.

  1. Site-specific Pt deposition and etching on electrically and thermally isolated SiO2 micro-disk surfaces

    International Nuclear Information System (INIS)

    Saraf, Laxmikant V

    2010-01-01

    Electrically and thermally isolated surfaces are crucial for improving the detection sensitivity of microelectronic sensors. The site-specific in situ growth of Pt nano-rods on thermally and electrically isolated SiO 2 micro-disks using wet chemical etching and a focused ion/electron dual beam (FIB-SEM) is demonstrated. Fabrication of an array of micro-cavities on top of a micro-disk is also demonstrated. The FIB source is utilized to fabricate through-holes in the micro-disks. Due to the amorphous nature of SiO 2 micro-disks, the Ga implantation possibly modifies through-hole sidewall surface chemistry rather than affecting its transport properties. Some sensor design concepts based on micro-fabrication of SiO 2 micro-disks utilizing thermally and electrically isolated surfaces are discussed from the viewpoint of applications in photonics and bio-sensing.

  2. Effect of surface area and air-drying distance on shear bond strength of etch-and-rinse adhesive

    Directory of Open Access Journals (Sweden)

    Farid Mohammed Sabry El-Askary

    2012-10-01

    Full Text Available We evaluated the effects of air-drying distance and bond surface area on the shear bond strength of a 2-step etch-and-rinse adhesive. A total of 120 bovine anterior teeth were equally divided into 6 main groups based on bonding surface area. The main groups were divided into sub-groups (n = 5 according to air-drying distance. The shear strength was determined using a universal testing machine at a crosshead speed of 0.5 mm/min. The averaged results were subjected to two-way ANOVA and Tukey's test (α = 0.05. Two-way ANOVA testing identified no significant cross-product interactions (p > 0.05, but the main factors of area (p < 0.0001 and air-drying distance (p < 0.00001 significantly affected the mean bond strength. Shorter air-drying distances improved bond strength, and increased surface area decreased the bond strength.

  3. High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

    Science.gov (United States)

    Chan, Silvia H.; Keller, Stacia; Tahhan, Maher; Li, Haoran; Romanczyk, Brian; DenBaars, Steven P.; Mishra, Umesh K.

    2016-06-01

    This paper reports high two-dimensional electron gas mobility attained from the regrowth of the AlGaN gating layer on ex situ GaN surfaces. To repair etch-damaged GaN surfaces, various pretreatments were conducted via metalorganic chemical vapor deposition, followed by a regrown AlGaN/GaN mobility test structure to evaluate the extent of recovery. The developed treatment process that was shown to significantly improve the electron mobility consisted of a N2 + NH3 pre-anneal plus an insertion of a 4 nm or thicker GaN interlayer prior to deposition of the AlGaN gating layer. Using the optimized process, a high electron mobility transistor (HEMT) device was fabricated which exhibited a high mobility of 1450 cm2 V-1 s-1 (R sh = 574 ohm/sq) and low dispersion characteristics. The additional inclusion of an in situ Al2O3 dielectric into the regrowth process for MOS-HEMTs still preserved the transport properties near etch-impacted areas.

  4. High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

    International Nuclear Information System (INIS)

    Chan, Silvia H; DenBaars, Steven P; Keller, Stacia; Tahhan, Maher; Li, Haoran; Romanczyk, Brian; Mishra, Umesh K

    2016-01-01

    This paper reports high two-dimensional electron gas mobility attained from the regrowth of the AlGaN gating layer on ex situ GaN surfaces. To repair etch-damaged GaN surfaces, various pretreatments were conducted via metalorganic chemical vapor deposition, followed by a regrown AlGaN/GaN mobility test structure to evaluate the extent of recovery. The developed treatment process that was shown to significantly improve the electron mobility consisted of a N 2  + NH 3 pre-anneal plus an insertion of a 4 nm or thicker GaN interlayer prior to deposition of the AlGaN gating layer. Using the optimized process, a high electron mobility transistor (HEMT) device was fabricated which exhibited a high mobility of 1450 cm 2 V −1 s −1 (R sh  = 574 ohm/sq) and low dispersion characteristics. The additional inclusion of an in situ Al 2 O 3 dielectric into the regrowth process for MOS-HEMTs still preserved the transport properties near etch-impacted areas. (paper)

  5. Dry Etching

    DEFF Research Database (Denmark)

    Stamate, Eugen; Yeom, Geun Young

    2016-01-01

    for the higher processing rates in FPDs, high-density plasma processing tools that can handle larger-area substrate uniformly are more intensively studied especially for the dry etching of polysilicon thin films. In the case of FPD processing, the current substrate size ranges from 730 × 920 mm (fourth...... etching requirements, and advantages of dry etching over wet processing. Current status and future trends are also presented....

  6. Tantalum etching in fluorocarbon/oxygen rf glow discharges

    International Nuclear Information System (INIS)

    Martz, J.C.; Hess, D.W.; Anderson, W.E.

    1990-01-01

    Etch rates of tantalum in tetrafluoromethane-oxygen and hexafluoroethane-oxygen rf glow discharges were measured in situ as functions of pressure, reactor residence time, temperature, and applied plasma power. A dramatic increase in the etch rate was observed as the pressure increased. In addition, two distinct temperature regimes occurred in Arrhenius plots. Such data suggest strong effects due to heat of reaction in the Ta/CF 4 -O 2 etch system. The observed etch-rate pressure dependence can be explained by assuming first-order kinetics for the reaction of fluorine atoms with tantalum. Evidence for etch-rate quenching at high pressures due to an increase in the deposition of an inhibiting fluorocarbon surface layer is presented

  7. Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Joglekar, S.; Azize, M.; Palacios, T. [Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States); Beeler, M.; Monroy, E. [Université Grenoble-Alpes, 38000 Grenoble (France); CEA Grenoble, INAC-PHELIQS, 38000 Grenoble (France)

    2016-07-25

    Ohmic contacts fabricated by regrowth of n{sup +} GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend upon the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends.

  8. A study on etching of UO2, Co, and Mo surface with R.F. plasma using CF4 and O2

    International Nuclear Information System (INIS)

    Kim, Yong Soo; Seo, Yong Dae

    2003-01-01

    Recently dry decontamination/surface-cleaning technology using plasma etching has been focused in the nuclear industry. In this study, the applicability of this new dry processing technique are experimentally investigated by examining the etching reaction of UO 2 , Co, and Mo in r.f. plasma with the etchant gas of CF 4 /O 2 mixture. UO 2 is chosen as a representing material for uranium and TRU (TRans-Uranic) compounds while metallic Co and Mo are selected because they are the principal contaminants in the used metallic nuclear components such as valves and pipes made of stainless steel or Inconel. Results show that in all cases maximum etching rate is achieved when the mole fraction of O 2 in CF 4 /O 2 mixture gas is 20%, regardless of temperature and r.f. power. In case of UO 2 , the highest etching reaction rate is greater than 1000 monolayers/min. at 370 .deg. C under 150 W r.f. power which is equivalent to 0.4 μm/min. As for Co, etching reaction begins to take place significantly when the temperature exceeds 350 .deg. C. Maximum etching rate achieved at 380 .deg. C is 0.06 μm/min. Mo etching reaction takes place vigorously even at relatively low temperature and the reaction rate increases drastically with increasing temperature. Highest etching rate at 380 .deg. C is 1.9 μm /min. According to OES (Optical Emission Spectroscopy) and AES (Auger Electron Spectroscopy) analysis, primary reaction seems to be a fluorination reaction, but carbonyl compound formation reaction may assist the dominant reaction, especially in case of Co and Mo. Through this basic study, the feasibility and the applicability of plasma decontamination technique are demonstrated

  9. Electrical field-induced faceting of etched features using plasma etching of fused silica

    Science.gov (United States)

    Huff, M.; Pedersen, M.

    2017-07-01

    This paper reports a previously unreported anomaly that occurs when attempting to perform deep, highly anisotropic etches into fused silica using an Inductively-Coupled Plasma (ICP) etch process. Specifically, it was observed that the top portion of the etched features exhibited a substantially different angle compared to the vertical sidewalls that would be expected in a typical highly anisotropic etch process. This anomaly has been termed as "faceting." A possible explanation of the mechanism that causes this effect and a method to eradicate it has been developed. Additionally, the method to eliminate the faceting is demonstrated. It is theorized that this faceting is a result of the interaction of the electro-potential electrical fields that surround the patterned nickel layers used as a hard mask and the electrical fields directing the high-energy ions from the plasma to the substrate surface. Based on this theory, an equation for calculating the minimum hard mask thickness required for a desired etch depth into fused silica to avoid faceting was derived. As validation, test samples were fabricated employing hard masks of thicknesses calculated based on the derived equation, and it was found that no faceting was observed on these samples, thereby demonstrating that the solution performed as predicted. Deep highly anisotropic etching of fused silica, as well as other forms of silicon dioxide, including crystalline quartz, using plasma etching, has an important application in the fabrication of several MEMS, NEMS, microelectronic, and photonic devices. Therefore, a method to eliminate faceting is an important development for the accurate control of the dimensions of deep and anisotropic etched features of these devices using ICP etch technology.

  10. Bone Response to Two Dental Implants with Different Sandblasted/Acid-Etched Implant Surfaces: A Histological and Histomorphometrical Study in Rabbits

    OpenAIRE

    Scarano, Antonio; Piattelli, Adriano; Quaranta, Alesandro; Lorusso, Felice

    2017-01-01

    Background Scientific evidence in the field of implant dentistry of the past 20 years established that titanium rough surfaces have shown improved osseointegration rates. In a majority of dental implants, the surface microroughness was obtained by grit blasting and/or acid etching. The aim of the study was to evaluate in vivo two different highly hydrophilic surfaces at different experimental times. Methods Calcium-modified (CA) and SLActive surfaces were evaluated and a total of 18 implants ...

  11. Bone Response to Two Dental Implants with Different Sandblasted/Acid-Etched Implant Surfaces: A Histological and Histomorphometrical Study in Rabbits

    OpenAIRE

    Scarano, Antonio; Piattelli, Adriano; Quaranta, Alesandro; Lorusso, Felice

    2017-01-01

    Background. Scientific evidence in the field of implant dentistry of the past 20 years established that titanium rough surfaces have shown improved osseointegration rates. In a majority of dental implants, the surface microroughness was obtained by grit blasting and/or acid etching. The aim of the study was to evaluate in vivo two different highly hydrophilic surfaces at different experimental times. Methods. Calcium-modified (CA) and SLActive surfaces were evaluated and a total of 18 implant...

  12. The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS

    Science.gov (United States)

    Tengeler, Sven; Kaiser, Bernhard; Ferro, Gabriel; Chaussende, Didier; Jaegermann, Wolfram

    2018-01-01

    The (001) surface of cubic silicon carbide (3C SiC) after cleaning, Ar sputtering and three different wet chemical etching procedures was thoroughly investigated via (angle resolved) XPS, HREELS, and LEED. While Ar sputtering was found to be unsuitable for surface preparation, all three employed wet chemical etching procedures (piranha/NH4F, piranha/HF, and RCA) provide a clean surface. HF as oxide removal agent tends to result in fluorine traces on the sample surface, despite thorough rinsing. All procedures yield a 1 × 1 Si-OH/C-H terminated surface. However, the XPS spectra reveal some differences in the resulting surface states. NH4F for oxide removal produces a flat band situation, whereas the other two procedures result in a slight downward (HF) or upward (RCA) band bending. Because the band bending is small, it can be concluded that the number of unsaturated surface defects is low.

  13. Self-formation of a nanonet of fluorinated carbon nanowires on the Si surface by combined etching in fluorine-containing plasma

    Science.gov (United States)

    Amirov, I. I.; Gorlachev, E. S.; Mazaletskiy, L. A.; Izyumov, M. O.; Alov, N. V.

    2018-03-01

    In this work, we report a technique of the self-formation of a nanonet of fluorinated carbon nanowires on the Si surface using a combined etching in fluorine-containing C4F8/Ar and SF6 plasmas. Using scanning electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy, we show that after the etching of Si in the C4F8/Ar plasma, a fluorinated carbon film of nanometer-scale thickness is formed on its surface and its formation accelerates at elevated temperatures. After a subsequent short-term etching in the SF6 plasma, the film is modified into a nanonet of self-formed fluorinated carbon nanowires.

  14. Preparation of multifunctional Al-Mg alloy surface with hierarchical micro/nanostructures by selective chemical etching processes

    Science.gov (United States)

    Shi, Tian; Kong, Jianyi; Wang, Xingdong; Li, Xuewu

    2016-12-01

    A superamphiphobic aluminum magnesium alloy surface with enhanced anticorrosion behavior has been prepared in this work via a simple and low-cost method. By successively polishing, etching and boiling treatments, the multifunctional hierarchical binary structures composed of the labyrinth-like concave-convex microstructures and twisty nanoflakes have been prepared. Results indicate that a superhydrophobic contact angle of 160.5° and superoleophobic contact angle larger than 150° as well as low adhesive property to liquids are achieved after such structures being modified with fluoroalkyl-silane. Furthermore, the anticorrosion behaviors in seawater of as-prepared samples are characterized by electrochemical tests including the impedance spectroscopies, equivalent circuits fittings and polarization curves. It is found that the hierarchical micro/nanostructures accompanying with the modified coating are proved to possess the maximal coating coverage rate of 90.0% larger than microstructures of 85.9%, nanostructures of 83.8% and bare polished surface of 67.1% suggesting the optimal anticorrosion. Finally, a great potential application in concentrators for surface-enhanced Raman scattering (SERS) analysis of toxic and pollutive ions on the superamphiphobic surface is also confirmed. This work has wider significance in extending further applications of alloys in engineering and environmental detecting fields.

  15. Hybrid and fully-etched surface implants in periodontally healthy patients: A comparative retrospective study on marginal bone loss.

    Science.gov (United States)

    Spinato, Sergio; Bernardello, Fabio; Sassatelli, Paolo; Zaffe, Davide

    2017-08-01

    Human studies on implants with the same design but with different surfaces are lacking at the present time. The aim of this study was to compare the survival rate of and marginal bone loss (MBL) around 2 types of implants with the same design, but with different surfaces: fully "sandblasted and double-etched" (SDE) implants and hybrid (H) implants, with an apical SDE-surface and a coronal machined-surface. The SDE- and H-surfaces were previously analyzed under SEM and profilometer. Implants were placed in partially edentulous periodontally healthy patients requiring single implant-restoration, in either mandible or maxilla, with cement-retained prosthetic restoration. Twelve months after prosthetic loading, MBL in relation to prosthetic abutment height (AH), calculated radiographically, was statistically analyzed. SEM and profilometer analyses revealed no differences between the SDE-surfaces of either SDE- or H-implants. Transverse ridges and grooves characterized the machined portion of H-implants, clearly influencing the profilometer analysis. In 75 patients, 37 SDE and 38 H-implants were placed and all functioned completely after 12 months. In both SDE- and H-groups, MBL had a significant inverse relationship with AH, with greater intercept and negative slope for SDE-group and intersection of the 2 regression lines at AH = 2 mm. A 100% survival rate was recorded for SDE- and H-implants placed in pristine bone of periodontally healthy patients; MBL was limited and similar in both SDE- and H-groups; the higher the prosthetic AH, the lesser the MBL around implants; H-implants could reduce bone loss most effectively with abutments lower than 2 mm, realistically exploitable on thin biotypes; SDE-implants could reduce bone loss most effectively with abutments greater than 2 mm, realistically exploitable on thick biotypes. © 2017 Wiley Periodicals, Inc.

  16. Micro-shear bond strength and surface micromorphology of a feldspathic ceramic treated with different cleaning methods after hydrofluoric acid etching

    Science.gov (United States)

    STEINHAUSER, Henrique Caballero; TURSSI, Cecília Pedroso; FRANÇA, Fabiana Mantovani Gomes; do AMARAL, Flávia Lucisano Botelho; BASTING, Roberta Tarkany

    2014-01-01

    Objective The aim of this study was to evaluate the effect of feldspathic ceramic surface cleaning on micro-shear bond strength and ceramic surface morphology. Material and Methods Forty discs of feldspathic ceramic were prepared and etched with 10% hydrofluoric acid for 2 minutes. The discs were randomly distributed into five groups (n=8): C: no treatment, S: water spray + air drying for 1 minute, US: immersion in ultrasonic bath for 5 minutes, F: etching with 37% phosphoric acid for 1 minute, followed by 1-minute rinse, F+US: etching with 37% phosphoric acid for 1 minute, 1-minute rinse and ultrasonic bath for 5 minutes. Composite cylinders were bonded to the discs following application of silane and hydrophobic adhesive for micro-shear bond strength testing in a universal testing machine at 0.5 mm/min crosshead speed until failure. Stereomicroscopy was used to classify failure type. Surface micromorphology of each treatment type was evaluated by scanning electron microscopy at 500 and 2,500 times magnification. Results One-way ANOVA test showed no significant difference between treatments (p=0.3197) and the most common failure types were cohesive resin cohesion followed by adhesive failure. Micro-shear bond strength of the feldspathic ceramic substrate to the adhesive system was not influenced by the different surface cleaning techniques. Absence of or less residue was observed after etching with hydrofluoric acid for the groups US and F+US. Conclusions Combining ceramic cleaning techniques with hydrofluoric acid etching did not affect ceramic bond strength, whereas, when cleaning was associated with ultrasound, less residue was observed. PMID:24676577

  17. Influence of warm air-drying on enamel bond strength and surface free-energy of self-etch adhesives.

    Science.gov (United States)

    Shiratsuchi, Koji; Tsujimoto, Akimasa; Takamizawa, Toshiki; Furuichi, Tetsuya; Tsubota, Keishi; Kurokawa, Hiroyasu; Miyazaki, Masashi

    2013-08-01

    We examined the effect of warm air-drying on the enamel bond strengths and the surface free-energy of three single-step self-etch adhesives. Bovine mandibular incisors were mounted in self-curing resin and then wet ground with #600 silicon carbide (SiC) paper. The adhesives were applied according to the instructions of the respective manufacturers and then dried in a stream of normal (23°C) or warm (37°C) air for 5, 10, and 20 s. After visible-light irradiation of the adhesives, resin composites were condensed into a mold and polymerized. Ten samples per test group were stored in distilled water at 37°C for 24 h and then the bond strengths were measured. The surface free-energies were determined by measuring the contact angles of three test liquids placed on the cured adhesives. The enamel bond strengths varied according to the air-drying time and ranged from 15.8 to 19.1 MPa. The trends for the bond strengths were different among the materials. The value of the γS⁺ component increased slightly when drying was performed with a stream of warm air, whereas that of the γS⁻ component decreased significantly. These data suggest that warm air-drying is essential to obtain adequate enamel bond strengths, although increasing the drying time did not significantly influence the bond strength. © 2013 Eur J Oral Sci.

  18. Spectroscopic Ellipsometry Measurements of Wurtzite Gallium Nitride Surfaces as a Function of Buffered Oxide Etch Substrate Submersion

    Science.gov (United States)

    Szwejkowski, Chester; Constantin, Costel; Duda, John; Hopkins, Patrick; Optical Studies of GaN interfaces Collaboration

    2013-03-01

    Gallium nitride (GaN) is considered the most important semiconductor after the discovery of silicon. Understanding the optical properties of GaN surfaces is imperative in determining the utility and applicability of this class of materials to devices. In this work, we present preliminary results of spectroscopic ellipsometry measurements as a function of surface root mean square (RMS). We used commercially available 5mm x 5mm, one side polished GaN (3-7 μm)/Sapphire (430 μm) substrates that have a wurtzite crystal structure and they are slightly n-type doped. The GaN substrates were cleaned with Acetone (20 min)/Isopropanol(20 min)/DI water (20 min) before they were submerged into Buffered Oxide Etch (BOE) for 10s - 60s steps. This BOE treatment produced RMS values of 1-30 nm as measured with an atomic force microscope. Preliminary qualitative ellipsometric measurements show that the complex refractive index and the complex dielectric function decrease with an increase of RMS. More measurements need to be done in order to provide explicit quantitative results. This work was supported by the 4-VA Collaborative effort between James Madison University and University of Virginia.

  19. Surface crack formation on rails at grinding induced martensite white etching layers

    DEFF Research Database (Denmark)

    Rasmussen, Carsten Jørn; Fæster, Søren; Dhar, Somrita

    2017-01-01

    The connection between profile grinding of rails, martensite surface layers and crack initiation has been investigated using visual inspection, optical microscopy and 3D X-ray computerized tomography. Newly grinded rails were extracted and found to be covered by a continuous surface layer...... of martensite with varying thickness formed by the grinding process. Worn R350HT and R200 rails were extracted from the Danish rail network as they had transverse bands resembling grinding marks on the running surface. The transverse bands were shown to consist of martensite which had extensive crack formation...

  20. Effect of oxygen inhibition in two-step self-etch systems on surface free energy and dentin bond strength with a chemically cured resin composite.

    Science.gov (United States)

    Yamaji, Ayumi; Tsujimoto, Akimasa; Asaoka, Tetsui; Matsuyoshi, Saki; Tsuchiya, Kenji; Takamizawa, Toshiki; Miyazaki, Masashi

    2014-09-01

    We compared the surface free energies and dentin bond strengths of two-step self-etch systems with and without an oxygen-inhibited layer. The adhesives were applied to self-etching primer-treated dentin surfaces of bovine incisors, after which the teeth were light-irradiated and the oxygen-inhibited layer was left intact or removed with ethanol. We determined surface free energies (γS) and their components by measuring the contact angles of three test liquids placed on the cured adhesives. We also measured the dentin bond strengths of chemically cured resin composite to the adhesives, with and without the oxygen-inhibited layer. For all surfaces, the estimated surface tension component, γS(LW), was relatively constant. The Lewis base (γS(-)) component decreased significantly when the oxygen-inhibited layer was removed, whereas the Lewis acid (γS(+)) component slightly increased. The dentin bond strengths of the two-step self-etch systems did not significantly differ in relation to the presence of the oxygen-inhibited layer. Although the surface free energy of the adhesive was affected by the presence of the oxygen-inhibited layer, no changes in dentin bond strength were detected.

  1. Mechanism behind dry etching of Si assisted by pulsed visible laser

    Science.gov (United States)

    Peck, Jason A.; Ruzic, David N.

    2017-11-01

    Poly-Si films were etched using a 13.56 MHz capacitively coupled plasma source while simultaneously being exposed to a pulsed Nd:YAG laser using 266 and 532 nm lines, with Gaussian pulse durations of 100 Hz and 7 ns. For a fluorocarbon etch recipe of 50:8 sccm Ar:C4F8 with varying O2, a minimum laser intensity for the etch onset was necessary to overcome CFx polymer deposition. This etch onset occurred at 6 ± 1 mJ/cm2/pulse; beyond this onset, the etch rate increased linearly with laser intensity. Null results of laser etch enhancement using continuous wave diode sources demonstrated the necessity of the instantaneous application of the pulsed Nd:YAG source. To determine the mechanism of laser etch enhancement at 532 nm, highly doped Si samples were tested, with varying optical absorption depths while keeping the photon energy constant. It was shown that at phosphorus contents of 1019 cm-3 and 1021 cm-3, 532 nm etch enhancement trends were 1.7× and 3.7× higher than those on intrinsic Si, showing that instantaneous surface heating was key in desorbing involatile etch products. Further investigation of the surface fluorine content via X-ray photon spectroscopy showed that distinct desorption stages occurred for increasing pulse energy—trends which aligned very well with SiFx desorption promoted by steady-state wafer heating. Gas arrival/surface saturation experiments with varying pressures and pulse rates showed that, in straightforward etching discharges such as Ar/SF6, laser removal per pulse plateaus when the pulse rate is lower than the rate of surface saturation, while in fluorocarbon-rich etch chemistries such as Ar/C4F8/O2 mixtures, a minimum pulse rate must be maintained to overcome the CFx polymer layer being deposited.

  2. Surface pH and bond strength of a self-etching primer/adhesive system to intracoronal dentin after application of hydrogen peroxide bleach with sodium perborate.

    Science.gov (United States)

    Elkhatib, Hanadi; Nakajima, Masatoshi; Hiraishi, Noriko; Kitasako, Yuichi; Tagami, Junji; Nomura, Satoshi

    2003-01-01

    This study compared the dentin bond strength of a self-etching primer/adhesive system with dentin surface pH with or without bleaching and observed the morphological changes in bleached dentin treated with a self-etching primer. Dentin disks were prepared from the coronal-labial region of 32 human anterior teeth. The pulpal surfaces of the dentin disks were polished with 600-grit SiC paper under running water. The dentin surfaces on all specimens were bleached with a mixture of 30% hydrogen peroxide and sodium perborate in 100% humidity at 37 degrees C for one week. The bleaching agent was then rinsed off with water for 5, 15 or 30 seconds. All specimens were stored in water at 37 degrees C. Half of the five-second rinsing specimens were stored in water for an additional week. Dentin surface pH with or without bleaching was examined using a pH-imaging microscope (SCHEM-100). A self-etching primer/adhesive system (Clearfil SE Bond) was applied to bleached or unbleached dentin according to the manufacturer's instructions. After 24-hour water storage, the bonded specimens were prepared for microtensile testing. Microtensile bond strength (microTBS) to dentin was measured using a universal-testing machine (EZ test, Shimadzu, Japan) at a crosshead speed of 1.0 mm/minute. Data were analyzed by one-way ANOVA and Scheffe's test (alpha=0.05). The pH values of the dentin surfaces of the 5 and 15 second rinsing groups were significantly higher than the control group (ppH values to the control group (ppH value of the dentin surface and decreased the bond strength of the self-etching primer/adhesive system. One-week water storage after bleaching recovered the surface pH and the microTBS to dentin.

  3. A study on the fabrication of superhydrophobic iron surfaces by chemical etching and galvanic replacement methods and their anti-icing properties

    Energy Technology Data Exchange (ETDEWEB)

    Li, Kunquan, E-mail: likunquan1987@gmail.com; Zeng, Xingrong, E-mail: psxrzeng@gmail.com; Li, Hongqiang, E-mail: hqli1979@gmail.com; Lai, Xuejun, E-mail: msxjlai@scut.edu.cn

    2015-08-15

    Graphical abstract: - Highlights: • Superhydrophobic iron surfaces were prepared by etching and replacement method. • The fabrication process was simple, time-saving and inexpensive. • Galvanic replacement method was more favorable to create roughness on iron surface. • The superhydrophobic iron surface showed excellent anti-icing properties. - Abstract: Hierarchical structures on iron surfaces were constructed by means of chemical etching by hydrochloric acid (HCl) solution or the galvanic replacement by silver nitrate (AgNO{sub 3}) solution. The superhydrophobic iron surfaces were successfully prepared by subsequent hydrophobic modification with stearic acid. The superhydrophobic iron surfaces were characterized by Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and water contact angle (WCA). The effects of reactive concentration and time on the microstructure and the wetting behavior were investigated. In addition, the anti-icing properties of the superhydrophobic iron surfaces were also studied. The FTIR study showed that the stearic acid was chemically bonded onto the iron surface. With the HCl concentration increase from 4 mol/L to 8 mol/L, the iron surface became rougher with a WCA ranging from 127° to 152°. The AgNO{sub 3} concentration had little effect on the wetting behavior, but a high AgNO{sub 3} concentration caused Ag particle aggregates to transform from flower-like formations into dendritic crystals, owing to the preferential growth direction of the Ag particles. Compared with the etching method, the galvanic replacement method on the iron surface more favorably created roughness required for achieving superhydrophobicity. The superhydrophobic iron surface showed excellent anti-icing properties in comparison with the untreated iron. The icing time of water droplets on the superhydrophobic surface was delayed to 500 s, which was longer than that of 295 s for

  4. Characterization of surface electrochemical reactions used in electrochemical atomic layer epitaxy and digital etching

    Science.gov (United States)

    Sorenson, Thomas Allen

    Surface analytical techniques have been used to characterize electrochemical reactions to be used in semiconductor processing technologies. Studies have been performed using UHV-EC methodology to determine conditions for the surface limited dissolution of CdTe(100). Electrochemical conditions were identified which resulted in the reduction of the top layer of tellurium atoms, leaving behind a cadmium enriched surface. Attempts to find an electrochemical potential for the oxidative dissolution of the cadmium surface were complicated by the simultaneous oxidation of the compound CdTe. In situ scanning tunneling microscopy has also been used to characterize the formation of tellurium atomic layers formed on Au(111) and Au(100) by underpotential deposition. On Au(100), the following sequence of surface structures was observed prior to bulk electrodeposition: a p(2x2), a (2x✓10), a (2x4), and a (✓2x✓5). The transitions between these structures was observed by STM and mechanisms for the phase transitions are presented. The results are correlated to UHV-EC studies of tellurium UPD on Au(100). On Au(111), the following sequence of structures was observeḑ: a (✓3 x✓3), a (✓7x✓13), and a (3x3). The (✓3x✓3) was shown to exist with a network of domain walls, forming long range triangular and diamond shaped superstructures. Conversion of the (✓3x✓3) to higher coverage structure resulted in roughening of the underlying Au surface and a mechanism is hypothesized to explain this transition. The STM results are also correlated to low energy electron diffraction (LEED) results obtained by UHV-EC studies. The surface structures formed by reductive UPD of the chalcogenide elements and Se on both Au(100) and Au(111) are compared. Both elements initially resulted in structures consisting of isolated atoms separated by distances close to the reported van der Waals diameter. Higher coverage structures resulted in interatomic chalcogenide bonding and the structures

  5. Dependence of surface smoothing, sputtering and etching phenomena on cluster ion dosage

    CERN Document Server

    Song, J H; Choi, W K

    2002-01-01

    The dependence of surface smoothing and sputtering phenomena of Si (1 0 0) solid surfaces irradiated by CO sub 2 cluster ions on cluster-ion dosage was investigated using an atomic force microscope. The flux and total ion dosage of impinging cluster ions at the acceleration voltage of 50 kV were fixed at 10 sup 9 ions/cm sup 2 s and were scanned from 5x10 sup 1 sup 0 to 5x10 sup 1 sup 3 ions/cm sup 2 , respectively. The density of hillocks induced by cluster ion impact was gradually increased with the dosage up to 5x10 sup 1 sup 1 ions/cm sup 2 , which caused that the irradiated surface became rough from 0.4 to 1.24 nm in root-mean-square roughness (sigma sub r sub m sub s). At the boundary of the ion dosage of 10 sup 1 sup 2 ions/cm sup 2 , the density of the induced hillocks was decreased and sigma sub r sub m sub s was about 1.21 nm, not being deteriorated further. At the dosage of 5x10 sup 1 sup 3 ions/cm sup 2 , the induced hillocks completely disappeared and the surface became very flat as much as sigma...

  6. Bond strength with various etching times on young permanent teeth

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.N.; Lu, T.C. (School of Dentistry, National Defense Medical Center, Taipei, Taiwan (China))

    1991-07-01

    Tensile bond strengths of an orthodontic resin cement were compared for 15-, 30-, 60-, 90-, or 120-second etching times, with a 37% phosphoric acid solution on the enamel surfaces of young permanent teeth. Fifty extracted premolars from 9- to 16-year-old children were used for testing. An orthodontic composite resin was used to bond the bracket directly onto the buccal surface of the enamel. The tensile bond strengths were tested with an Instron machine. Bond failure interfaces between bracket bases and teeth surfaces were examined with a scanning electron microscope and calculated with mapping of energy-dispersive x-ray spectrometry. The results of tensile bond strength for 15-, 30-, 60-, or 90-second etching times were not statistically different. For the 120-second etching time, the decrease was significant. Of the bond failures, 43%-49% occurred between bracket and resin interface, 12% to 24% within the resin itself, 32%-40% between resin and tooth interface, and 0% to 4% contained enamel fragments. There was no statistical difference in percentage of bond failure interface distribution between bracket base and resin, resin and enamel, or the enamel detachment. Cohesive failure within the resin itself at the 120-second etching time was less than at other etching times, with a statistical significance. To achieve good retention, to decrease enamel loss, and to reduce moisture contamination in the clinic, as well as to save chairside time, a 15-second etching time is suggested for teenage orthodontic patients.

  7. Effects of surface hydration state and application method on the bond strength of self-etching adhesives to cut enamel.

    Science.gov (United States)

    Caneppele, Taciana Marco Ferraz; Torres, Carlos Rocha Carlos; Sassaki, Alan; Valdetaro, Fernanda; Fernandes, Ricardo Silva; Prieto de Freitas, Carolina; Batista, Graziela Ribeiro

    2012-02-01

    To evaluate the effect of surface hydration state and application method on the microtensile bond strength of one-step self-etching adhesives systems to cut enamel. One hundred ninety-five bovine teeth were used. The enamel on the buccal side was flattened with 600-grit SiC paper. For the control group, 15 teeth received Adper Single Bond 2, applied according to manufacturer's recommendations. The other specimens were divided into three groups according to the adhesive system used: Futura Bond M (FM; Voco), Clearfil S3 Bond (CS; Kuraray), and Optibond All in One (OA; Kerr). For each group, two hydration states were tested: D: blown dry with air; W: the excess of water was removed with absorbent paper. Two application methods were tested: P (passive): the adhesive was simply left on the surface; A (active): the adhesive was rubbed with an applicator point. A coat of Grandio composite resin (Voco) was applied on the surface. The teeth were sectioned to obtain enamel-resin sticks (1 x 1 mm), which underwent microtensile bond testing. The data in MPa were submitted to a three-way ANOVA and Tukey's test (α = 5%). The ANOVA showed significant differences for application method and the type of adhesive, but not for hydration state. For the application method, the results of Tukey's test were: P: 31.46 (± 7.09)a; A: 34.04 (± 7.19)b. For the type of adhesive, the results were: OA: 31.29 (± 7.05)a; CS: 32.28 (± 7.14)a; FM: 34.68 (± 7.17)b; different lower-case letters indicate statistically significant differences. Active application improved the bond strength to cut enamel. The adhesive Futurabond M showed the highest bond strength to cut enamel.

  8. From acid etching treatments to tribocorrosive properties of dental implants: do some experimental results on surface treatments have an influence on the tribocorrosion behaviour of dental implants?

    International Nuclear Information System (INIS)

    Geringer, Jean; Demanget, Nicolas; Pellier, Julie

    2013-01-01

    Surface treatments of dental implants aim at promoting osseointegration, i.e. the anchorage of the metallic part. Titanium-, grade II–V, based material is used as a bulk material for dental implants. For promoting the anchorage of this metallic biomaterial in human jaw, some strategies have been applied for improving the surface state, i.e. roughness, topography and coatings. A case study, experimental study, is described with the method of acid etching on titanium grade 4, CpTi. The main goal is to find the right proportion in a mixture of two acids in order to obtain the best surface state. Finally, a pure theoretical prediction is quite impossible and some experimental investigations are necessary to improve the surface state. The described acid etching is compared with some other acid etching treatments and some coatings available on dental implants. Thus, the discussion is focused on the tribocorrosion behaviour of titanium-based materials. The purpose of the coating is that the lifetime under tribocorrosion is limited. Moreover, the surgery related to the implantation has a huge impact on the stability of dental implants. Thus, the performance of dental implants depends on factors related to surgery (implantation) that are difficult to predict from the biomaterial characteristics. From the tribocorrosion point of view, i.e. during the mastication step, the titanium material is submitted to some deleterious factors that cause the performance of dental implants to decrease. (paper)

  9. From acid etching treatments to tribocorrosive properties of dental implants: do some experimental results on surface treatments have an influence on the tribocorrosion behaviour of dental implants?

    Science.gov (United States)

    Geringer, Jean; Demanget, Nicolas; Pellier, Julie

    2013-10-01

    Surface treatments of dental implants aim at promoting osseointegration, i.e. the anchorage of the metallic part. Titanium-, grade II-V, based material is used as a bulk material for dental implants. For promoting the anchorage of this metallic biomaterial in human jaw, some strategies have been applied for improving the surface state, i.e. roughness, topography and coatings. A case study, experimental study, is described with the method of acid etching on titanium grade 4, CpTi. The main goal is to find the right proportion in a mixture of two acids in order to obtain the best surface state. Finally, a pure theoretical prediction is quite impossible and some experimental investigations are necessary to improve the surface state. The described acid etching is compared with some other acid etching treatments and some coatings available on dental implants. Thus, the discussion is focused on the tribocorrosion behaviour of titanium-based materials. The purpose of the coating is that the lifetime under tribocorrosion is limited. Moreover, the surgery related to the implantation has a huge impact on the stability of dental implants. Thus, the performance of dental implants depends on factors related to surgery (implantation) that are difficult to predict from the biomaterial characteristics. From the tribocorrosion point of view, i.e. during the mastication step, the titanium material is submitted to some deleterious factors that cause the performance of dental implants to decrease.

  10. Standard Methods of Analysis of Sulfochromate Etch Solution Used in Surface Preparation of Aluminum

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2012-01-01

    1.1 These methods offer a means for controlling the effectiveness of the etchant which is normally used for preparing the surface of aluminum alloys for subsequent adhesive bonding. As the etchant reacts with the aluminum, hexavalent chromium is converted to trivalent chromium; a measure of the two and the difference can be used to determine the amount of dichromate used. 1.2 The sulfochromate solution can be replenished by restoring the sodium dichromate and the sulfuric acid to the original formulation levels. The lower limit of usefulness will vary depending upon solution storage, adhesives used, critical nature of bond capability, variety of metals processed, etc. and should be determined. Replenishment will be limited to the number of times the chemical ingredients can be restored and maintained to the required levels and should be determined by the user. Sludge collecting in the bottom of a tank should be minimized by periodic removal of sludge. For some applications, the hexavalent chromium should not ...

  11. Industrial ion source technology. [for ion beam etching, surface texturing, and deposition

    Science.gov (United States)

    Kaufman, H. R.

    1977-01-01

    Plasma probe surveys were conducted in a 30-cm source to verify that the uniformity in the ion beam is the result of a corresponding uniformity in the discharge-chamber plasma. A 15 cm permanent magnet multipole ion source was designed, fabricated, and demonstrated. Procedures were investigated for texturing a variety of seed and surface materials for controlling secondary electron emission, increasing electron absorption of light, and improved attachment of biological tissue for medical implants using argon and tetrafluoromethane as the working gases. The cross section for argon-argon elastic collisions in the ion-beam energy range was calculated from interaction potentials and permits calculation of beam interaction effects that can determine system pumping requirements. The data also indicate that different optimizations of ion-beam machines will be advantageous for long and short runs, with 1 mA-hr/cm being the rough dividing line for run length. The capacity to simultaneously optimize components in an ion-beam machine for a single application, a capacity that is not evident in competitive approaches such as diode sputtering is emphasized.

  12. Bio-inspired low frictional surfaces having micro-dimple arrays prepared with honeycomb patterned porous films as wet etching masks.

    Science.gov (United States)

    Saito, Y; Yabu, H

    2015-01-27

    Some kinds of snakes have micro-dimple arrays on their skins and show low frictional properties. Cost-effective and simple preparation methods of surfaces having micro-dimple arrays without burrs have been required. In this study, micro-dimple arrays were successfully prepared on aluminum plates and pipes by using honeycomb patterned porous films as wet etching masks. Resulting surfaces having 5 and 8 μm dimple diameters show low frictional coefficients compared with polished surfaces at a fluid lubrication regime.

  13. Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface

    International Nuclear Information System (INIS)

    Wang Liancheng; Guo Enqing; Liu Zhiqiang; Yi Xiaoyan; Wang Guohong

    2011-01-01

    Low resistance and thermally stable n-type contacts to N-polar GaN are essentially important for vertical light emitting diodes (VLEDs). The electrical characteristics of VLEDs with n-type contacts on a roughened and flat N-polar surface have been compared. VLEDs with contacts deposited on a roughened surface exhibit lower leakage currents yet a higher operating voltage. Based on this, a new scheme by depositing metallization contacts on a selectively wet-etching roughened surface has been developed. Excellent electrical and optical characteristics have been achieved with this method. An aging test further confirmed its stability. (semiconductor devices)

  14. Effects of Dextrose and Lipopolysaccharide on the Corrosion Behavior of a Ti-6Al-4V Alloy with a Smooth Surface or Treated with Double-Acid-Etching

    Science.gov (United States)

    Faverani, Leonardo P.; Assunção, Wirley G.; de Carvalho, Paulo Sérgio P.; Yuan, Judy Chia-Chun; Sukotjo, Cortino; Mathew, Mathew T.; Barao, Valentim A.

    2014-01-01

    Diabetes and infections are associated with a high risk of implant failure. However, the effects of such conditions on the electrochemical stability of titanium materials remain unclear. This study evaluated the corrosion behavior of a Ti-6Al-4V alloy, with a smooth surface or conditioned by double-acid-etching, in simulated body fluid with different concentrations of dextrose and lipopolysaccharide. For the electrochemical assay, the open-circuit-potential, electrochemical impedance spectroscopy, and potentiodynamic test were used. The disc surfaces were characterized by scanning electron microscopy and atomic force microscopy. Their surface roughness and Vickers microhardness were also tested. The quantitative data were analyzed by Pearson's correlation and independent t-tests (α = 0.05). In the corrosion parameters, there was a strong lipopolysaccharide correlation with the Ipass (passivation current density), Cdl (double-layer capacitance), and Rp (polarization resistance) values (pTi-6Al-4V alloy with surface treatment by double-acid-etching. The combination of dextrose and lipopolysaccharide was correlated with the Icorr (corrosion current density) and Ipass (pTi-6Al-4V alloy decreased (pTi-6Al-4V alloy increased (pTi-6Al-4V alloy by increasing the surface thickness mainly in the group associated with dextrose and lipopolysaccharide. The combination of dextrose and lipopolysaccharide affected the corrosion behavior of the Ti-6Al-4V alloy surface treated with double-acid-etching. However, no dose-response corrosion behavior could be observed. These results suggest a greater susceptibility to corrosion of titanium implants in diabetic patients with associated infections. PMID:24671257

  15. Impact of electron irradiation on particle track etching response in ...

    Indian Academy of Sciences (India)

    Scan- ning electron microscopy of etched samples further revealed the surface damage in these irradiated. PADCs. Keywords. 2 MeV electron; 140 MeV. ¾. Si; PADC; dose-dependent track registration properties; bulk etch-rate; etching response; critical angle of etching; detection efficiency; scanning electron microscopy.

  16. Dry etching of polydimethylsiloxane using microwave plasma

    Science.gov (United States)

    Hwang, Sung Jin; Oh, Dong Joon; Jung, Phill Gu; Lee, Sang Min; Go, Jeung Sang; Kim, Joon-Ho; Hwang, Kyu-Youn; Ko, Jong Soo

    2009-09-01

    This paper presents a new polydimethylsiloxane (PDMS) dry-etching method that uses microwave plasma. The applicability of the method for fabricating microstructures and removing residual PDMS is also verified. The etch rate of PDMS was dominantly influenced by the gas flux ratio of CF4/O2 and the microwave power. While the PDMS etch rate increased as the flux ratio of CF4 was increased, the etch rate decreased as the flux ratio of O2 was increased. The maximum etch rate of 4.31 µm min-1 was achieved when mixing oxygen (O2) and tetrafluoromethane (CF4) at a 1:2 ratio at 800 W power. The PDMS etch rate almost linearly increased with the microwave power. The ratio of the vertical etch rate to the lateral etch rate was in a range of 1.14-1.64 and varied with the gas fluxes. In consideration of potential applications of the proposed PDMS etching method, array-type PDMS microwells and network-type microprotrusion structures were fabricated. The contact angle was dramatically increased from 104° (non-etched PDMS surface) to 148° (etched PDMS surface) and the surface was thereby modified to be superhydrophobic. In addition, a thin PDMS skin that blocked holes and PDMS residues affixed in nickel microstructures was successively removed.

  17. Optical and structural properties of porous zinc oxide fabricated via electrochemical etching method

    International Nuclear Information System (INIS)

    Ching, C.G.; Lee, S.C.; Ooi, P.K.; Ng, S.S.; Hassan, Z.; Hassan, H. Abu; Abdullah, M.J.

    2013-01-01

    Highlights: • Hillock like porous structure zinc oxide was obtained via electrochemical etching. • Anisotropic dominance etching process by KOH etchant. • Reststrahlen features are sensitive to multilayer porous structure. • Determination of porosity from IR reflectance spectrum. -- Abstract: We investigated the optical and structural properties of porous zinc oxide (ZnO) thin film fabricated by ultraviolet light-assisted electrochemical etching. This fabrication process used 10 wt% potassium hydroxide solution as an electrolyte. Hillock-like porous ZnO films were successfully fabricated according to the field emission scanning electron microscopy results. The cross-sectional study of the sample indicated that anisotropic-dominated etching process occurred. However, the atomic force microscopic results showed an increase in surface roughness of the sample after electrochemical etching. A resonance hump induced by the porous structure was observed in the infrared reflectance spectrum. Using theoretical modeling technique, ZnO porosification was verified, and the porosity of the sample was determined

  18. Characterization of Ag-porous silicon nanostructured layer formed by an electrochemical etching of p-type silicon surface for bio-application

    Science.gov (United States)

    Naddaf, M.; Al-Mariri, A.; Haj-Mhmoud, N.

    2017-06-01

    Nanostructured layers composed of silver-porous silicon (Ag-PS) have been formed by an electrochemical etching of p-type (1 1 1) silicon substrate in a AgNO3:HF:C2H5OH solution at different etching times (10 min-30 min). Scanning electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDS) results reveal that the produced layers consist of Ag dendrites and a silicon-rich porous structure. The nanostructuring nature of the layer has been confirmed by spatial micro-Raman scattering and x-ray diffraction techniques. The Ag dendrites exhibit a surface-enhanced Raman scattering (SERS) spectrum, while the porous structure shows a typical PS Raman spectrum. Upon increasing the etching time, the average size of silicon nanocrystallite in the PS network decreases, while the average size of Ag nanocrystals is slightly affected. In addition, the immobilization of prokaryote Salmonella typhimurium DNA via physical adsorption onto the Ag-PS layer has been performed to demonstrate its efficiency as a platform for detection of biological molecules using SERS.

  19. Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

    Directory of Open Access Journals (Sweden)

    Kun-Dar Li

    2018-02-01

    Full Text Available To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

  20. Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

    Science.gov (United States)

    Li, Kun-Dar; Miao, Jin-Ru

    2018-02-01

    To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

  1. Influence of light intensity on surface-free energy and dentin bond strength of single-step self-etch adhesives.

    Science.gov (United States)

    Nojiri, Kie; Tsujimoto, Akimasa; Suzuki, Takayuki; Shibasaki, Syo; Matsuyoshi, Saki; Takamizawa, Toshiki; Miyazaki, Masashi

    2015-01-01

    In this study, we investigated the influence of light intensity on the surface-free energy and dentin bond strength of single-step selfetch adhesives. The adhesives were applied to the dentin surfaces of bovine mandibular incisors and cured with light intensities of 0 (no irradiation), 200, 400, and 600 mW/cm(2). Surface-free energies were determined by measuring the contact angles of three test liquids placed on the cured adhesives. Dentin bond strengths of the specimens were also measured. Polymerization with a higher light intensity resulted in a lower surface-free energy of the cured adhesives. The greatest bond strength was achieved when a light intensity of 400 mW/cm(2) or greater was used. Our data suggest that the surface-free energy and dentin bond strength of single-step self-etch adhesives are affected by light intensity of the curing unit.

  2. A study on the fabrication of superhydrophobic iron surfaces by chemical etching and galvanic replacement methods and their anti-icing properties

    Science.gov (United States)

    Li, Kunquan; Zeng, Xingrong; Li, Hongqiang; Lai, Xuejun

    2015-08-01

    Hierarchical structures on iron surfaces were constructed by means of chemical etching by hydrochloric acid (HCl) solution or the galvanic replacement by silver nitrate (AgNO3) solution. The superhydrophobic iron surfaces were successfully prepared by subsequent hydrophobic modification with stearic acid. The superhydrophobic iron surfaces were characterized by Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and water contact angle (WCA). The effects of reactive concentration and time on the microstructure and the wetting behavior were investigated. In addition, the anti-icing properties of the superhydrophobic iron surfaces were also studied. The FTIR study showed that the stearic acid was chemically bonded onto the iron surface. With the HCl concentration increase from 4 mol/L to 8 mol/L, the iron surface became rougher with a WCA ranging from 127° to 152°. The AgNO3 concentration had little effect on the wetting behavior, but a high AgNO3 concentration caused Ag particle aggregates to transform from flower-like formations into dendritic crystals, owing to the preferential growth direction of the Ag particles. Compared with the etching method, the galvanic replacement method on the iron surface more favorably created roughness required for achieving superhydrophobicity. The superhydrophobic iron surface showed excellent anti-icing properties in comparison with the untreated iron. The icing time of water droplets on the superhydrophobic surface was delayed to 500 s, which was longer than that of 295 s for untreated iron. Meanwhile, the superhydrophobic iron surface maintained superhydrophobicity after 10 icing and de-icing cycles in cold conditions.

  3. Role of chamber dimension in fluorocarbon based deposition and etching of SiO2 and its effects on gas and surface-phase chemistry

    International Nuclear Information System (INIS)

    Joseph, E. A.; Zhou, B.-S.; Sant, S. P.; Overzet, L. J.; Goeckner, M. J.

    2008-01-01

    It is well understood that chamber geometry is an influential factor governing plasma processing of materials. Simple models suggest that a large fraction of this influence is due to changes in basic plasma properties, namely, density, temperature, and potential. However, while such factors do play an important role, they only partly describe the observed differences in process results. Therefore, to better elucidate the role of chamber geometry in this work, the authors explore the influence of plasma chemistry and its symbiotic effect on plasma processing by decoupling the plasma density, temperature, and potential from the plasma-surface (wall) interactions. Specifically, a plasma system is used with which the authors can vary the chamber dimension so as to vary the plasma-surface interaction directly. By varying chamber wall diameter, 20-66 cm, and source-platen distance, 4-6 cm, the etch behavior of SiO 2 (or the deposition behavior of fluorocarbon polymer) and the resulting gas-phase chemistry change significantly. Results from in situ spectroscopic ellipsometry show significant differences in etch characteristics, with etch rates as high as 350 nm/min and as low as 75 nm/min for the same self-bias voltage. Fluorocarbon deposition rates are also highly dependent on chamber dimension and vary from no net deposition to deposition rates as high as 225 nm/min. Etch yields, however, remain unaffected by the chamber size variations. From Langmuir probe measurements, it is clear that chamber geometry results in significant shifts in plasma properties such as electron and ion densities. Indeed, such measurements show that on-wafer processes are limited at least in part by ion flux for high energy reactive ion etch. However, in situ multipass Fourier transform infrared spectroscopy reveals that the line-averaged COF 2 , SiF 4 , CF 2 , and CF 3 gas-phase densities are also dependent on chamber dimension at high self-bias voltage and also correlate well to the CF x

  4. The fabrication and hydrophobic property of micro-nano patterned surface on magnesium alloy using combined sparking sculpture and etching route

    International Nuclear Information System (INIS)

    Wu, Yunfeng; Wang, Yaming; Liu, Hao; Liu, Yan; Guo, Lixin; Jia, Dechang; Ouyang, Jiahu; Zhou, Yu

    2016-01-01

    Highlights: • A hydrophobic micro-nano roughness surface on magnesium was fabricated. • Micro-nano structure derives from duplicating ‘over growth’ regions by MAO. • 7–9 μm micro-scale big pores insetting with nano-scale fine pores were fabricated. • Hydrophobicity of micro-nano surface was improved by chemical decoration and stearic treatment. - Abstract: Magnesium alloy with micro-nano structure roughness surface, can serve as the loading reservoirs of medicine capsule and industrial lubricating oil, or mimic ‘lotus leaf’ hydrophobic surface, having the potential applications in medical implants, automobile, aerospace and electronic products, etc. Herein, we propose a novel strategy to design a micro-nano structure roughness surface on magnesium alloy using combined microarc sparking sculpture and etching in CrO 3 aqueous solution. A hydrophobic surface (as an applied example) was further fabricated by chemical decorating on the obtained patterned magnesium alloy surface to enhance the corrosion resistance. The results show that the combined micro-nano structure of 7–9 μm diameter big pores insetting with nano-scale fine pores was duplicated after etched the sparking sculptured ‘over growth’ oxide regions towards the magnesium substrate. The micro-nano structure surface was chemically decorated using AgNO 3 and stearic acid, which enables the contact angle increased from 60° to 146.8°. The increasing contact angle is mainly attributed to the micro-nano structure and the chemical composition. The hydrophobic surface of magnesium alloy improved the corrosion potential from −1.521 V of the bare magnesium to −1.274 V. Generally, the sparking sculpture and then etching route demonstrates a low-cost, high-efficacy method to fabricate a micro-nano structure hydrophobic surface on magnesium alloy. Furthermore, our research on the creating of micro-nano structure roughness surface and the hydrophobic treatment can be easily extended to the

  5. The fabrication and hydrophobic property of micro-nano patterned surface on magnesium alloy using combined sparking sculpture and etching route

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yunfeng [Institute for Advanced Ceramics, Harbin Institute of Technology, Harbin 150001 (China); Wang, Yaming, E-mail: wangyaming@hit.edu.cn [Institute for Advanced Ceramics, Harbin Institute of Technology, Harbin 150001 (China); Liu, Hao [Institute for Advanced Ceramics, Harbin Institute of Technology, Harbin 150001 (China); Liu, Yan [Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun 130022 (China); Guo, Lixin; Jia, Dechang; Ouyang, Jiahu; Zhou, Yu [Institute for Advanced Ceramics, Harbin Institute of Technology, Harbin 150001 (China)

    2016-12-15

    Highlights: • A hydrophobic micro-nano roughness surface on magnesium was fabricated. • Micro-nano structure derives from duplicating ‘over growth’ regions by MAO. • 7–9 μm micro-scale big pores insetting with nano-scale fine pores were fabricated. • Hydrophobicity of micro-nano surface was improved by chemical decoration and stearic treatment. - Abstract: Magnesium alloy with micro-nano structure roughness surface, can serve as the loading reservoirs of medicine capsule and industrial lubricating oil, or mimic ‘lotus leaf’ hydrophobic surface, having the potential applications in medical implants, automobile, aerospace and electronic products, etc. Herein, we propose a novel strategy to design a micro-nano structure roughness surface on magnesium alloy using combined microarc sparking sculpture and etching in CrO{sub 3} aqueous solution. A hydrophobic surface (as an applied example) was further fabricated by chemical decorating on the obtained patterned magnesium alloy surface to enhance the corrosion resistance. The results show that the combined micro-nano structure of 7–9 μm diameter big pores insetting with nano-scale fine pores was duplicated after etched the sparking sculptured ‘over growth’ oxide regions towards the magnesium substrate. The micro-nano structure surface was chemically decorated using AgNO{sub 3} and stearic acid, which enables the contact angle increased from 60° to 146.8°. The increasing contact angle is mainly attributed to the micro-nano structure and the chemical composition. The hydrophobic surface of magnesium alloy improved the corrosion potential from −1.521 V of the bare magnesium to −1.274 V. Generally, the sparking sculpture and then etching route demonstrates a low-cost, high-efficacy method to fabricate a micro-nano structure hydrophobic surface on magnesium alloy. Furthermore, our research on the creating of micro-nano structure roughness surface and the hydrophobic treatment can be easily

  6. Effect of input power and gas pressure on the roughening and selective etching of SiO2/Si surfaces in reactive plasmas

    International Nuclear Information System (INIS)

    Zhong, X. X.; Huang, X. Z.; Tam, E.; Ostrikov, K.; Colpo, P.; Rossi, F.

    2010-01-01

    We report on the application low-temperature plasmas for roughening Si surfaces which is becoming increasingly important for a number of applications ranging from Si quantum dots to cell and protein attachment for devices such as 'laboratory on a chip' and sensors. It is a requirement that Si surface roughening is scalable and is a single-step process. It is shown that the removal of naturally forming SiO 2 can be used to assist in the roughening of the surface using a low-temperature plasma-based etching approach, similar to the commonly used in semiconductor micromanufacturing. It is demonstrated that the selectivity of SiO 2 /Si etching can be easily controlled by tuning the plasma power, working gas pressure, and other discharge parameters. The achieved selectivity ranges from 0.4 to 25.2 thus providing an effective means for the control of surface roughness of Si during the oxide layer removal, which is required for many advance applications in bio- and nanotechnology.

  7. Moth eye-inspired anti-reflective surfaces for improved IR optical systems & visible LEDs fabricated with colloidal lithography and etching.

    Science.gov (United States)

    Chan, Lesley W; Morse, Daniel E; Gordon, Michael J

    2018-03-16

    Near- and sub-wavelength photonic structures are used by numerous organisms (e.g., insects, cephalopods, fish, birds) to create vivid and often dynamically-tunable colors, as well as create, manipulate, or capture light for vision, communication, crypsis, photosynthesis, and defense. This review introduces the physics of moth eye (ME)-like, biomimetic nanostructures and discusses their application to reduce optical losses and improve efficiency of various optoelectronic devices, including photodetectors, photovoltaics, imagers, and light emitting diodes. Light-matter interactions at structured and heterogeneous surfaces over different length scales are discussed, as are the various methods used to create ME-inspired surfaces. Special interest is placed on a simple, scalable, and tunable method, namely colloidal lithography with plasma dry etching, to fabricate ME-inspired nanostructures in a vast suite of materials. Anti-reflective surfaces and coatings for IR devices and enhancing light extraction from visible light emitting diodes (LEDs) are highlighted. © 2018 IOP Publishing Ltd.

  8. Selective Plasma Etching of Polymeric Substrates for Advanced Applications

    Directory of Open Access Journals (Sweden)

    Harinarayanan Puliyalil

    2016-06-01

    Full Text Available In today’s nanoworld, there is a strong need to manipulate and process materials on an atom-by-atom scale with new tools such as reactive plasma, which in some states enables high selectivity of interaction between plasma species and materials. These interactions first involve preferential interactions with precise bonds in materials and later cause etching. This typically occurs based on material stability, which leads to preferential etching of one material over other. This process is especially interesting for polymeric substrates with increasing complexity and a “zoo” of bonds, which are used in numerous applications. In this comprehensive summary, we encompass the complete selective etching of polymers and polymer matrix micro-/nanocomposites with plasma and unravel the mechanisms behind the scenes, which ultimately leads to the enhancement of surface properties and device performance.

  9. Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching

    Directory of Open Access Journals (Sweden)

    Iatsunskyi I. R.

    2013-12-01

    Full Text Available The author suggests to use the etching method MacEtch (metal-assisted chemical etching for production of micro- and nanostructures of porous silicon. The paper presents research results on the morphology structures obtained at different parameters of deposition and etching processes. The research has shown that, depending on the parameters of deposition of silver particles and silicon wafers etching, the obtained surface morphology may be different. There may be both individual crater-like pores and developed porous or macroporous surface. These results indicate that the MacEtch etching is a promising method for obtaining micro-porous silicon nanostructures suitable for effective use in gas sensors and biological object sensors.

  10. Role of surface-reaction layer in HBr/fluorocarbon-based plasma with nitrogen addition formed by high-aspect-ratio etching of polycrystalline silicon and SiO2 stacks

    Science.gov (United States)

    Iwase, Taku; Matsui, Miyako; Yokogawa, Kenetsu; Arase, Takao; Mori, Masahito

    2016-06-01

    The etching of polycrystalline silicon (poly-Si)/SiO2 stacks by using VHF plasma was studied for three-dimensional NAND fabrication. One critical goal is achieving both a vertical profile and high throughput for multiple-stack etching. While the conventional process consists of multiple steps for each stacked layer, in this study, HBr/fluorocarbon-based gas chemistry was investigated to achieve a single-step etching process to reduce process time. By analyzing the dependence on wafer temperature, we improved both the etching profile and rate at a low temperature. The etching mechanism is examined considering the composition of the surface reaction layer. X-ray photoelectron spectroscopy (XPS) analysis revealed that the adsorption of N-H and Br was enhanced at a low temperature, resulting in a reduced carbon-based-polymer thickness and enhanced Si etching. Finally, a vertical profile was obtained as a result of the formation of a thin and reactive surface-reaction layer at a low wafer temperature.

  11. In vitro study of 3D PLGA/n-HAp/β-TCP composite scaffolds with etched oxygen plasma surface modification in bone tissue engineering

    Energy Technology Data Exchange (ETDEWEB)

    Roh, Hee-Sang [Department of Dental Materials, School of Dentistry, Chosun University, 309 Pilmun-daero, Dong-gu, Gwangju 61452 (Korea, Republic of); Jung, Sang-Chul [Department of Environmental Engineering, Sunchon National University, 255 Jungang-ro, Sunchon 57922 (Korea, Republic of); Kook, Min-Suk [Department of Oral and Maxillofacial Surgery, School of Dentistry, Chonnam National University, 77 Yongbong-ro, Buk-gu, Gwangju 61186 (Korea, Republic of); Kim, Byung-Hoon, E-mail: kim5055@chosun.ac.kr [Department of Dental Materials, School of Dentistry, Chosun University, 309 Pilmun-daero, Dong-gu, Gwangju 61452 (Korea, Republic of)

    2016-12-01

    Highlights: • PLGA and PLGA/n-HAp/β-TCP scaffolds were successfully fabricated by 3D printing. • Oxygen plasma etching increases the wettability and surface roughness. • Bioceramics and oxygen plasma etching and could be used to improve the cell affinity. - Abstract: Three-dimensional (3D) scaffolds have many advantageous properties for bone tissue engineering application, due to its controllable properties such as pore size, structural shape and interconnectivity. In this study, effects on oxygen plasma surface modification and adding of nano-hydroxyapatite (n-HAp) and β-tricalcium phosphate (β-TCP) on the 3D PLGA/n-HAp/β-TCP scaffolds for improving preosteoblast cell (MC3T3-E1) adhesion, proliferation and differentiation were investigated. The 3D PLGA/n-HAp/β-TCP scaffolds were fabricated by 3D Bio-Extruder equipment. The 3D scaffolds were prepared with 0°/90° architecture and pore size of approximately 300 μm. In addition 3D scaffolds surface were etched by oxygen plasma to enhance the hydrophilic property and surface roughness. After oxygen plasma treatment, the surface chemistry and morphology were investigated by Fourier transform infrared spectroscopy, scanning electron microscopy, and atomic force microscopy. And also hydrophilic property was measured by contact angle. The MC3T3-E1 cell proliferation and differentiation were investigated by MTT assay and ALP activity. In present work, the 3D PLGA/HAp/beta-TCP composite scaffold with suitable structure for the growth of osteoblast cells was successfully fabricated by 3D rapid prototyping technique. The surface hydrophilicity and roughness of 3D scaffold increased by oxygen plasma treatment had a positive effect on cell adhesion, proliferation, and differentiation. Furthermore, the differentiation of MC3T3-E1 cell was significantly enhanced by adding of n-HAp and β-TCP on 3D PLGA scaffold. As a result, combination of bioceramics and oxygen plasma treatment showed a synergistic effect on

  12. Bone Response to Two Dental Implants with Different Sandblasted/Acid-Etched Implant Surfaces: A Histological and Histomorphometrical Study in Rabbits

    Directory of Open Access Journals (Sweden)

    Antonio Scarano

    2017-01-01

    Full Text Available Background. Scientific evidence in the field of implant dentistry of the past 20 years established that titanium rough surfaces have shown improved osseointegration rates. In a majority of dental implants, the surface microroughness was obtained by grit blasting and/or acid etching. The aim of the study was to evaluate in vivo two different highly hydrophilic surfaces at different experimental times. Methods. Calcium-modified (CA and SLActive surfaces were evaluated and a total of 18 implants for each type of surface were positioned into the rabbit articular femoral knee-joint in a split model experiment, and they were evaluated histologically and histomorphometrically at 15, 30, and 60 days of healing. Results. Bone-implant contact (BIC at the two-implant surfaces was significantly different in favor of the CA surface at 15 days (p=0.027, while SLActive displayed not significantly higher values at 30 (p=0.51 and 60 days (p=0.061. Conclusion. Both implant surfaces show an intimate interaction with newly formed bone.

  13. Bone Response to Two Dental Implants with Different Sandblasted/Acid-Etched Implant Surfaces: A Histological and Histomorphometrical Study in Rabbits.

    Science.gov (United States)

    Scarano, Antonio; Piattelli, Adriano; Quaranta, Alesandro; Lorusso, Felice

    2017-01-01

    Scientific evidence in the field of implant dentistry of the past 20 years established that titanium rough surfaces have shown improved osseointegration rates. In a majority of dental implants, the surface microroughness was obtained by grit blasting and/or acid etching. The aim of the study was to evaluate in vivo two different highly hydrophilic surfaces at different experimental times. Calcium-modified (CA) and SLActive surfaces were evaluated and a total of 18 implants for each type of surface were positioned into the rabbit articular femoral knee-joint in a split model experiment, and they were evaluated histologically and histomorphometrically at 15, 30, and 60 days of healing. Bone-implant contact (BIC) at the two-implant surfaces was significantly different in favor of the CA surface at 15 days ( p = 0.027), while SLActive displayed not significantly higher values at 30 ( p = 0.51) and 60 days ( p = 0.061). Both implant surfaces show an intimate interaction with newly formed bone.

  14. Etch Defect Characterization and Reduction in Hard-Mask-Based Al Interconnect Etching

    International Nuclear Information System (INIS)

    Lee, H.J.; Hung, C.L.; Leng, C.H.; Lian, N.T.; Young, L.W.

    2009-01-01

    This paper identifies the defect adders, for example, post hard-mask etch residue, post metal etch residue, and blocked etch metal island and investigates the removal characteristics of these defects within the oxide-masked Al etching process sequence. Post hard-mask etch residue containing C atom is related to the hardening of photoresist after the conventional post-RIE ashing at 275 degree C. An in situ O 2 -based plasma ashing on RIE etcher was developed to prevent the photoresist hardening from the high-ashing temperature; followed wet stripping could successfully eliminate such hardened polymeric residue. Post metal etch residue was caused from the attack of the Al sidewall by Cl atoms, and too much CHF 3 addition in the Al main etch step passivated the surface of Al resulting in poor capability to remove the Al-containing residue. The lower addition of CHF 3 in the Al main etch step would benefit from the residue removal. One possibility of blocked etch metal island creating was due to the micro masking formed on the opening of Ti N during the hard-mask patterning. We report that an additional Ti N surface pretreatment with the Ar/CHF 3 /N 2 plasmas could reduce the impact of the micro masking residues on blocked metal etch.

  15. A String Model Etching Algorithm

    Science.gov (United States)

    1979-10-18

    simulator, and especially to T. Van Duzer , who has provided continuous encouragement, suggestions, and computer funds. References [1] A.R...Neureuther, R.E. Jewett, P.I. Hagouel and T. Van Duzer , "Surface Etching Simula- tion and Applications in IC Processing", Kodak Microelectronics Seminar

  16. Effects of dry etching on GaAs

    International Nuclear Information System (INIS)

    Pang, S.W.; Lincoln, G.A.; McClelland, R.W.; DeGraff, P.D.; Geis, M.W.; Piacentini, W.J.

    1983-01-01

    A number of dry etching techniques have been developed and their ability to produce anisotropic etch profiles has been demonstrated. In addition to etch anisotropy, an important consideration for device and circuit fabrication is whether a sample suffers radiation damage by exposure to ions, electrons, or ultraviolet light during etching. In this study we evaluate the degree of radiation damage induced in GaAs by ion-beam etching with Ar, reactive-ion etching with CF 4 and CHF 3 , and ion-beam-assisted etching with Ar and Cl 2 . In addition, we propose and demonstrate processing techniques which can be used after dry etching to reduce the effects of radiation damage. GaAs samples were etched under a variety of etching conditions. The degree of radiation damage caused by etching was determined by evaluating Schottky diodes fabricated on the etched surfaces and by using deep level transient spectroscopy to characterize trapping centers. It was found that the barrier heights and breakdown voltages of Schottky diodes were changed after etching. Also, an increase in the density of traps was observed. Variations in the etching conditions had a strong effect on the measured characteristics of the samples

  17. Laser etching as an alternative

    International Nuclear Information System (INIS)

    Dreyfus, R.W.; Kelly, R.

    1989-01-01

    Atoms and molecules are removed from surfaces by intense laser beams. This fact has been known almost since the discovery of the laser. Within the present overall area of interest, namely understanding ion-beam-induced sputtering, it is equally important both to contrast laser etching to ion sputtering and to understand the underlying physics taking place during laser etching. Beyond some initial broad observations, the specific discussion is limited to, and aimed at, two areas: (i) short wavelength, UV, laser-pulse effects and (ii) energy fluences sufficiently small that only monolayers (and not microns) of material are removed per pulse. 38 refs.; 13 figs.; 5 tabs

  18. Mixed nano/micro-sized calcium phosphate composite and EDTA root surface etching improve availability of graft material in intrabony defects: an in vivo scanning electron microscopy evaluation.

    Science.gov (United States)

    Gamal, Ahmed Y; Iacono, Vincent J

    2013-12-01

    The use of nanoparticles of graft materials may lead to breakthrough applications for periodontal regeneration. However, due to their small particle size, nanoparticles may be eliminated from periodontal defects by phagocytosis. In an attempt to improve nanoparticle retention in periodontal defects, the present in vivo study uses scanning electron microscopy (SEM) to evaluate the potential of micrograft particles of β-tricalcium phosphate (β-TCP) to enhance the binding and retention of nanoparticles of hydroxyapatite (nHA) on EDTA-treated and non-treated root surfaces in periodontal defects after 14 days of healing. Sixty patients having at least two hopeless periodontally affected teeth designated for extraction were randomly divided into four treatment groups (15 patients per group). Patients in group 1 had selected periodontal intrabony defects grafted with nHA of particle size 10 to 100 nm. Patients in group 2 were treated in a similar manner but had the affected roots etched for 2 minutes with a neutral 24% EDTA gel before grafting of the associated vertical defects with nHA. Patients in group 3 had the selected intrabony defects grafted with a composite graft consisting of equal volumes of nHA and β-TCP (particle size 63 to 150 nm). Patients in group 4 were treated as in group 3 but the affected roots were etched with neutral 24% EDTA as in group 2. For each of the four groups, one tooth was extracted immediately, and the second tooth was extracted after 14 days of healing for SEM evaluation. Fourteen days after surgery, all group 1 samples were devoid of any nanoparticles adherent to the root surfaces. Group 2 showed root surface areas 44.7% covered by a single layer of clot-blended grafted particles 14 days following graft application. After 14 days, group 3 samples appeared to retain fibrin strands devoid of grafted particles. Immediately extracted root samples of group 4 had adherent graft particles that covered a considerable area of the root surfaces

  19. Influence of Etching Mode on Enamel Bond Durability of Universal Adhesive Systems.

    Science.gov (United States)

    Suzuki, T; Takamizawa, T; Barkmeier, W W; Tsujimoto, A; Endo, H; Erickson, R L; Latta, M A; Miyazaki, M

    2016-01-01

    The purpose of this study was to determine the enamel bond durability of three universal adhesives in different etching modes through fatigue testing. The three universal adhesives used were Scotchbond Universal, Prime&Bond Elect universal dental adhesive, and All-Bond Universal light-cured dental adhesive. A single-step self-etch adhesive, Clearfil S 3 Bond Plus was used as a control. The shear bond strength (SBS) and shear fatigue strength (SFS) to human enamel were evaluated in total-etch mode and self-etch mode. A stainless steel metal ring with an internal diameter of 2.4 mm was used to bond the resin composite to the flat-ground (4000-grit) tooth surfaces for determination of both SBS and SFS. For each enamel surface treatment, 15 specimens were prepared for SBS and 30 specimens for SFS. The staircase method for fatigue testing was then used to determine the SFS of the resin composite bonded to the enamel using 10-Hz frequencies for 50,000 cycles or until failure occurred. Scanning electron microscopy was used to observe representative debonded specimen surfaces and the resin-enamel interfaces. A two-way analysis of variance and the Tukey post hoc test were used for analysis of the SBS data, whereas a modified t-test with Bonferroni correction was used for the SFS data. All adhesives in total-etch mode showed significantly higher SBS and SFS values than those in self-etch mode. Although All-Bond Universal in self-etch mode showed a significantly lower SBS value than the other adhesives, there was no significant difference in SFS values among the adhesives in this mode. All adhesives showed higher SFS:SBS ratios in total-etch mode than in self-etch mode. With regard to the adhesive systems used in this study, universal adhesives showed higher enamel bond strengths in total-etch mode. Although the influence of different etching modes on the enamel-bonding performance of universal adhesives was found to be dependent on the adhesive material, total-etch mode

  20. Modeling Surface Processes Occurring on Moons of the Outer Solar System

    Science.gov (United States)

    Umurhan, O. M.; White, O. L.; Moore, J. M.; Howard, A. D.; Schenk, P.

    2016-12-01

    A variety of processes, some with familiar terrestrial analogs, are known to take place on moon surfaces in the outer solar system. In this talk, we discuss the observed features of mass wasting and surface transport seen on both Jupiter's moon Calisto and one of Saturn's Trojan moons Helene. We provide a number of numerical models using upgraded version of MARSSIM in support of several hypotheses suggested on behalf of the observations made regarding these objects. Calisto exhibits rolling plains of low albedo materials surrounding relatively high jutting peaks harboring high albedo deposits. Our modeling supports the interpretation that Calisto's surface is a record of erosion driven by the sublimation of CO2 and H2O contained in the bedrock. Both solar insolation and surface re-radiation drives the sublimation leaving behind debris which we interpret to be the observed darkened regolith and, further, the high albedo peaks are water ice deposits on surface cold traps. On the other hand, the 45 km scale Helene, being a milligravity environment, exhibits mysterious looking streaks and grooves of very high albedo materials extending for several kilometers with a down-sloping grade of 7o-9o. Helene's cratered terrain also shows evidence of narrowed septa. The observed surface features suggest some type of advective processes are at play in this system. Our modeling lends support to the suggestion that Helene's surface materials behave as a Bingham plastic material - our flow modeling with such rheologies can reproduce the observed pattern of streakiness depending upon the smoothness of the underlying bedrock; the overall gradients observed; and the narrowed septa of inter-crater regions.

  1. Photochemical etching of GaAs using synchrotron radiation

    Energy Technology Data Exchange (ETDEWEB)

    Terakado, Shingo; Nishino, Jun-ichi; Morigami, Mitsuaki; Harada, Mitsuaki; Suzuki, Shigeo (SANYO Electric Co. Ltd., Tsukuba, Ibaraki (Japan). Tsukuba Research Center); Tanaka, Kenichiro; Chikawa, Jun-ichi

    1990-05-01

    The photochemical etching of gallium arsenide by chlorine was investigated using synchrotron radiation. At the substrate temperatures above 25degC, both the irradiated and nonirradiated regions were uniformly etched. In case of substrate temperatures below -25degC, highly selective etching was observed in the irradiated region. We considered that at low temperatures, etching reaction caused by gas-phase excitation is suppressed and photochemical surface reaction becomes dominant. (author).

  2. In Vivo Assessment of Bone Ingrowth Potential of Three-Dimensional E-Beam Produced Implant Surfaces and the Effect of Additional Treatment by Acid Etching and Hydroxyapatite Coating

    NARCIS (Netherlands)

    Biemond, J.E.; Hannink, G.; Jurrius, A.M.G.; Verdonschot, Nicolaas Jacobus Joseph; Buma, P.

    2012-01-01

    The bone ingrowth potential of three-dimensional E-beam-produced implant surfaces was examined by histology and compared to a porous plasma-sprayed control. The effects of acid etching and a hydroxyapatite (HA) coating were also evaluated by histology. Specimens were implanted in the distal femur of

  3. Etch pits on caprolactam

    Science.gov (United States)

    van der Heijden, A. E. D. M.; Geertman, R. M.

    1992-09-01

    As an extension of the results on the morphology, we investigated the defect structure of solution-grown caprolactam crystals by means of slight etching in cyclohexane and subsequent microscopic observation of the resulting etch pits on the 200, 110, and faces. In case of the face (which is a cleavage plane), we confirmed that the etch pits are formed around dislocation lines by performing an "etch-and-match" experiment. Information is obtained on morphology and density of etch pits, the presence of grain boundaries, as well as qualitative information on the inclination of the dislocation lines.

  4. SU-8 etching in inductively coupled oxygen plasma

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted; Keller, Stephan Sylvest; Jensen, Flemming

    2013-01-01

    Structuring or removal of the epoxy based, photo sensitive polymer SU-8 by inductively coupled plasma reactive ion etching (ICP-RIE) was investigated as a function of plasma chemistry, bias power, temperature, and pressure. In a pure oxygen plasma, surface accumulation of antimony from the photo......-initiator introduced severe roughness and reduced etch rate significantly. Addition of SF6 to the plasma chemistry reduced the antimony surface concentration with lower roughness and higher etch rate as an outcome. Furthermore the etch anisotropy could be tuned by controlling the bias power. Etch rates up to 800 nm...

  5. Early bone response to machined, sandblasting acid etching (SLA) and novel surface-functionalization (SLAffinity) titanium implants: characterization, biomechanical analysis and histological evaluation in pigs.

    Science.gov (United States)

    Chiang, Hsi-Jen; Hsu, Heng-Jui; Peng, Pei-Wen; Wu, Ching-Zong; Ou, Keng-Liang; Cheng, Han-Yi; Walinski, Christopher J; Sugiatno, Erwan

    2016-02-01

    The purpose of the present study was to examine early tissue response and osseointegration in the animal model. The surface morphologies of SLAffinity were characterized using scanning electron microscopy and atomic force microscopy. The microstructures were examined by X-ray diffraction, and hardness was measured by nanoindentation. Moreover, the safety and toxicity properties were evaluated using computer-aided programs and cell cytotoxicity assays. In the animal model, implants were installed in the mandibular canine-premolar area of 12 miniature pigs. Each pig received three implants: machine, sandblasted, large grit, acid-etched, and SLAffinity-treated implants. The results showed that surface treatment did affect bone-to-implant contact (BIC) significantly. At 3 weeks, the SLAffinity-treated implants were found to present significantly higher BIC values than the untreated implants. The SLAffinity treatments enhanced osseointegration significantly, especially at early stages of bone tissue healing. As described above, the results of the present study demonstrate that the SLAffinity treatment is a reliable surface modification method. © 2015 Wiley Periodicals, Inc.

  6. LDRD final report : on the development of hybrid level-set/particle methods for modeling surface evolution during feature-scale etching and deposition processes

    International Nuclear Information System (INIS)

    McBride, Cory L.; Schmidt, Rodney Cannon; Musson, Lawrence Cale

    2005-01-01

    Two methods for creating a hybrid level-set (LS)/particle method for modeling surface evolution during feature-scale etching and deposition processes are developed and tested. The first method supplements the LS method by introducing Lagrangian marker points in regions of high curvature. Once both the particle set and the LS function are advanced in time, minimization of certain objective functions adjusts the LS function so that its zero contour is in closer alignment with the particle locations. It was found that the objective-minimization problem was unexpectedly difficult to solve, and even when a solution could be found, the acquisition of it proved more costly than simply expanding the basis set of the LS function. The second method explored is a novel explicit marker-particle method that we have named the grid point particle (GPP) approach. Although not a LS method, the GPP approach has strong procedural similarities to certain aspects of the LS approach. A key aspect of the method is a surface rediscretization procedure--applied at each time step and based on a global background mesh--that maintains a representation of the surface while naturally adding and subtracting surface discretization points as the surface evolves in time. This method was coded in 2-D, and tested on a variety of surface evolution problems by using it in the ChISELS computer code. Results shown for 2-D problems illustrate the effectiveness of the method and highlight some notable advantages in accuracy over the LS method. Generalizing the method to 3D is discussed but not implemented

  7. Wavelength dependent laser-induced etching of Cr–O doped GaAs ...

    Indian Academy of Sciences (India)

    Administrator

    The laser induced etching of semi-insulating GaAs 〈100〉 is carried out to create porous structure ... Keywords. Laser-induced etching; intermediate state; nanostructure; SEM; AFM. 1. Introduction. Laser-induced etching, an improved etching process, is very ... into the properties and applications of GaAs, the surface.

  8. Particle precipitation in connection with KOH etching of silicon

    DEFF Research Database (Denmark)

    Nielsen, Christian Bergenstof; Christensen, Carsten; Pedersen, Casper

    2004-01-01

    This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show...... that the precipitation is independent of KOH etching time, but that the amount of deposited material varies with dopant type and dopant concentration. The experiments also suggest that the precipitation occurs when the silicon wafers are removed from the KOH etching solution and not during the etching procedure. When...

  9. Correlation between grain orientation and the shade of color etching

    International Nuclear Information System (INIS)

    Szabo, Peter J.; Kardos, I.

    2010-01-01

    Color etching is an extremely effective metallographic technique not only for making grains well visible, but also for making them distinguishable for automated image analyzers. During color etching, a thin film is formed on the surface of the specimen. The thickness of this layer is in the order of magnitude of the visible light and since both the metal-film boundary and the film surface reflect light, an interference occurs. A wavelength-component of the white line is eliminated and its complementary color will be seen on the surface. As the thickness changes, the colors also change grain by grain. The thickness of the film is dependent on several factors, mostly on the type of the phase. However, different color shades can be observed on the surfaces of single phase materials, which phenomenon is caused by the different crystallographic orientations of the grains. This paper shows a combined color etching electron backscatter diffraction (EBSD) investigation of cast iron. An area of the surface of a gray cast iron specimen was etched. Colors were characterized by their luminescence and their red, green and blue intensity. An EBSD orientation map was taken from the same area and the orientations of the individual grains were determined. Results showed that a strong correlation was found between the luminescence and the R, G, B intensity of the color and the angle between the specimen normal and the direction, while such correlation was not observed between the color parameters and the and directions, respectively. This indicates that film thickness is sensitive to the direction of the crystal.

  10. Characterization of electric discharge machining, subsequent etching and shot-peening as a surface treatment for orthopedic implants

    Czech Academy of Sciences Publication Activity Database

    Stráský, J.; Havlíková, Jana; Bačáková, Lucie; Harcuba, P.; Mhaede, M.; Janeček, M.

    2013-01-01

    Roč. 213, Sep 15 (2013), s. 73-78 ISSN 0169-4332 R&D Projects: GA ČR(CZ) GAP107/12/1025 Institutional support: RVO:67985823 Keywords : Ti-6A1-4V * surface treatment * cell proliferation * orthopedics Subject RIV: JG - Metallurgy Impact factor: 2.538, year: 2013

  11. Dry etching method for compound semiconductors

    Science.gov (United States)

    Shul, Randy J.; Constantine, Christopher

    1997-01-01

    A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

  12. The Materials Chemistry of Atomic Oxygen with Applications to Anisotropic Etching of Submicron Structures in Microelectronics and the Surface Chemistry Engineering of Porous Solids

    Science.gov (United States)

    Koontz, Steve L.; Leger, Lubert J.; Wu, Corina; Cross, Jon B.; Jurgensen, Charles W.

    1994-01-01

    Neutral atomic oxygen is the most abundant component of the ionospheric plasma in the low Earth orbit environment (LEO; 200 to 700 kilometers altitude) and can produce significant degradation of some spacecraft materials. In order to produce a more complete understanding of the materials chemistry of atomic oxygen, the chemistry and physics of O-atom interactions with materials were determined in three radically different environments: (1) The Space Shuttle cargo bay in low Earth orbit (the EOIM-3 space flight experiment), (2) a high-velocity neutral atom beam system (HVAB) at Los Alamos National Laboratory (LANL), and (3) a microwave-plasma flowing-discharge system at JSC. The Space Shuttle and the high velocity atom beam systems produce atom-surface collision energies ranging from 0.1 to 7 eV (hyperthermal atoms) under high-vacuum conditions, while the flowing discharge system produces a 0.065 eV surface collision energy at a total pressure of 2 Torr. Data obtained in the three different O-atom environments referred to above show that the rate of O-atom reaction with polymeric materials is strongly dependent on atom kinetic energy, obeying a reactive scattering law which suggests that atom kinetic energy is directly available for overcoming activation barriers in the reaction. General relationships between polymer reactivity with O atoms and polymer composition and molecular structure have been determined. In addition, vacuum ultraviolet photochemical effects have been shown to dominate the reaction of O atoms with fluorocarbon polymers. Finally, studies of the materials chemistry of O atoms have produced results which may be of interest to technologists outside the aerospace industry. Atomic oxygen 'spin-off' or 'dual use' technologies in the areas of anisotropic etching in microelectronic materials and device processing, as well as surface chemistry engineering of porous solid materials are described.

  13. Effects of rhBMP-2 on Sandblasted and Acid Etched Titanium Implant Surfaces on Bone Regeneration and Osseointegration: Spilt-Mouth Designed Pilot Study

    Directory of Open Access Journals (Sweden)

    Nam-Ho Kim

    2015-01-01

    Full Text Available This study was conducted to evaluate effects of rhBMP-2 applied at different concentrations to sandblasted and acid etched (SLA implants on osseointegration and bone regeneration in a bone defect of beagle dogs as pilot study using split-mouth design. Methods. For experimental groups, SLA implants were coated with different concentrations of rhBMP-2 (0.1, 0.5, and 1 mg/mL. After assessment of surface characteristics and rhBMP-2 releasing profile, the experimental groups and untreated control groups (n = 6 in each group, two animals in each group were placed in split-mouth designed animal models with buccal open defect. At 8 weeks after implant placement, implant stability quotients (ISQ values were recorded and vertical bone height (VBH, mm, bone-to-implant contact ratio (BIC, %, and bone volume (BV, % in the upper 3 mm defect areas were measured. Results. The ISQ values were highest in the 1.0 group. Mean values of VBH (mm, BIC (%, and BV (% were greater in the 0.5 mg/mL and 1.0 mg/mL groups than those in 0.1 and control groups in buccal defect areas. Conclusion. In the open defect area surrounding the SLA implant, coating with 0.5 and 1.0 mg/mL concentrations of rhBMP-2 was more effective, compared with untreated group, in promoting bone regeneration and osseointegration.

  14. Thermal history-based etching

    Science.gov (United States)

    Simpson, John T.

    2017-11-28

    A method for adjusting an etchability of a first borosilicate glass by heating the first borosilicate glass; combining the first borosilicate glass with a second borosilicate glass to form a composite; and etching the composite with an etchant. A material having a protrusive phase and a recessive phase, where the protrusive phase protrudes from the recessive phase to form a plurality of nanoscale surface features, and where the protrusive phase and the recessive phase have the same composition.

  15. Plasma etching an introduction

    CERN Document Server

    Manos, Dennis M

    1989-01-01

    Plasma etching plays an essential role in microelectronic circuit manufacturing. Suitable for researchers, process engineers, and graduate students, this book introduces the basic physics and chemistry of electrical discharges and relates them to plasma etching mechanisms. Throughout the volume the authors offer practical examples of process chemistry, equipment design, and production methods.

  16. High haze textured surface B-doped ZnO-TCO films on wet-chemically etched glass substrates for thin film solar cells

    Science.gov (United States)

    Xinliang, Chen; Jieming, Liu; Jia, Fang; Ze, Chen; Ying, Zhao; Xiaodan, Zhang

    2016-08-01

    Textured glass substrates with crater-like feature sizes of ˜5-30 μm were obtained using the chemical etching method through adjusting the treatment round (R). Pyramid-like boron-doped zinc oxide (ZnO:B) films with feature sizes of ˜300-800 nm were deposited on the etched glass substrates by the metal organic chemical deposition (MOCVD) technique using water, diethylzinc and 1%-hydrogen-diluted diborane. The ZnO:B films on the etched glass with micro/nano double textures presented a much stronger light-scattering capability than the conventional ZnO:B on the flat glass and their electrical properties changed little. Typical etched glass-3R/ZnO:B exhibited a high root mean square (RMS) roughness of ˜160 nm. The haze values at the wavelengths of 550 nm and 850 nm for etched glass-3R/ZnO:B sample were 61% and 42%, respectively. Finally, the optimized etched glass/ZnO:B was applied in the silicon (Si) based thin film solar cells. The high haze etched glass/ZnO:B substrates have potential merits for thin film solar cells. Project supported by the State Key Development Program for Basic Research of China (Nos. 2011CBA00706, 2011CBA00707), the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan (No. 13JCZDJC26900), the Tianjin Major Science and Technology Support Project (No. 11TXSYGX22100), the National High Technology Research and Development Program of China (No. 2013AA050302), and the Fundamental Research Funds for the Central Universities (No. 65010341).

  17. Methods of etching a substrate

    International Nuclear Information System (INIS)

    Cosmo, J.J.; Gambino, R.J.; Harper, J.M.E.

    1979-01-01

    The invention relates to a method of etching a substrate. The substrate is located opposite a target electrode in a vacuum chamber, and the surface of the target electrode is bombarded with energetic particles of atomic dimensions. The target electrode is an intermetallic composition (compound, alloy or finely divided homogeneous mixture) of two metals A and B such that upon bombardment the electrode emits negative ions of metal B which have sufficient energy to produce etching of the substrate. Many target materials are exemplified. Typically the metal A has an electronegativity XA and metal B has an electronegativity XB such that Xb - Xa is greater than about 2.55 electron volts, with the exception of combinations of metals having a fractional ionicity Q less than about 0.314. The source of the energetic particles may be an ionised gas in the vacuum chamber. The apparatus and its mode of operation are described in detail. (U.K.)

  18. In vitro bonding effectiveness of three different one-step self-etch adhesives with additional enamel etching.

    Science.gov (United States)

    Batra, Charu; Nagpal, Rajni; Tyagi, Shashi Prabha; Singh, Udai Pratap; Manuja, Naveen

    2014-08-01

    To evaluate the effect of additional enamel etching on the shear bond strength of three self-etch adhesives. Class II box type cavities were made on extracted human molars. Teeth were randomly divided into one control group of etch and rinse adhesive and three test groups of self-etch adhesives (Clearfil S3 Bond, Futurabond NR, Xeno V). The teeth in the control group (n = 10) were treated with Adper™ Single Bond 2. The three test groups were further divided into two subgroups (n = 10): (i) self-etch adhesive was applied as per the manufacturer's instructions; (ii) additional etching of enamel surfaces was done prior to the application of self-etch adhesives. All cavities were restored with Filtek Z250. After thermocycling, shear bond strength was evaluated using a Universal testing machine. Data were analyzed using anova independent sample's 't' test and Dunnett's test. The failure modes were evaluated with a stereomicroscope at a magnification of 10×. Additional phosphoric acid etching of the enamel surface prior to the application of the adhesive system significantly increased the shear bond strength of all the examined self-etch adhesives. Additional phosphoric acid etching of enamel surface significantly improved the shear bond strength. © 2013 Wiley Publishing Asia Pty Ltd.

  19. Methods for increasing the etching uniformity of ion beam multiple mask

    Science.gov (United States)

    Zhang, Xiaobo; Xiong, Ying; Liu, Qiang; Tian, Yangchao

    2009-05-01

    With uniform illumination, multi-step diffractive optical elements (DOE) are fabricated with ion beam multiple mask etching technology. According to the technical process of ion beam multiple mask etching on DOE, a distribution of surface error based on LKJ-150 ion beam etching machine is presented. Numerical analysis indicates that the surface distribution of etching error results in lower performance of multi-step DOE, which consumedly reduces the uniformity of target field with uniform illumination. After each etching process, the sample i.e, multi-step DOE fabricated by LKJ-150 ion beam etching machine is measured. Through measurement data, we get the etching error. On the basis of etching error, the mask can be made. Numerical analysis shows this method can reduce the impact of surface error on the performance of DOE and increase the etching uniformity of. ion beam multiple mask

  20. Controllable process of nanostructured GaN by maskless inductively coupled plasma (ICP) etching

    International Nuclear Information System (INIS)

    Zhao, Yanfei; Wang, Hu; Shen, Yang; Huang, Zengli; Zhang, Jian; Dingsun, An; Zhang, Wei; Li, Jiadong

    2017-01-01

    This work improved the anisotropically etching profile of GaN with Cl 2 ICP by adjusting etching pressure and gas flow. High etching rate is achieved by lowering pressure and gas flow instead of increasing etching power. High etching power is unfavorable because it may cause physical damages on the surface. In addition, it is noticed that the material of the carrier, used for holding samples during etching, has significant effects on the morphology and profile of the etched GaN surface. A smooth and large-area GaN surface was achieved by proper ICP etching with a big piece of Si carrier; whereas, with other kinds of carriers, various nano-structures were formed on the GaN surfaces after etching. In fact, it is the etching resistance of carrier materials that impacts the surface profile of etched GaN. Needle-like and grass-like nanostructures on etched GaN surfaces were observed with Al and sapphire carriers, of which the process is very similar to RIE-grass or black-silicon technology. This controllable maskless dry-etching process for the GaN nanostructured surface may show more potential applications in GaN devices. (paper)

  1. Controllable process of nanostructured GaN by maskless inductively coupled plasma (ICP) etching

    Science.gov (United States)

    Zhao, Yanfei; Wang, Hu; Zhang, Wei; Li, Jiadong; Shen, Yang; Huang, Zengli; Zhang, Jian; Dingsun, An

    2017-11-01

    This work improved the anisotropically etching profile of GaN with Cl2 ICP by adjusting etching pressure and gas flow. High etching rate is achieved by lowering pressure and gas flow instead of increasing etching power. High etching power is unfavorable because it may cause physical damages on the surface. In addition, it is noticed that the material of the carrier, used for holding samples during etching, has significant effects on the morphology and profile of the etched GaN surface. A smooth and large-area GaN surface was achieved by proper ICP etching with a big piece of Si carrier; whereas, with other kinds of carriers, various nano-structures were formed on the GaN surfaces after etching. In fact, it is the etching resistance of carrier materials that impacts the surface profile of etched GaN. Needle-like and grass-like nanostructures on etched GaN surfaces were observed with Al and sapphire carriers, of which the process is very similar to RIE-grass or black-silicon technology. This controllable maskless dry-etching process for the GaN nanostructured surface may show more potential applications in GaN devices.

  2. Dry etching for microelectronics

    CERN Document Server

    Powell, RA

    1984-01-01

    This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

  3. Etching in microsystem technology

    CERN Document Server

    Kohler, Michael

    2008-01-01

    Microcomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p

  4. Dry etched SiO2 Mask for HgCdTe Etching Process

    Science.gov (United States)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  5. Comparison of Self-Etch Primers with Conventional Acid Etching System on Orthodontic Brackets.

    Science.gov (United States)

    Zope, Amit; Zope-Khalekar, Yogita; Chitko, Shrikant S; Kerudi, Veerendra V; Patil, Harshal Ashok; Bonde, Prasad Vasudeo; Jaltare, Pratik; Dolas, Siddhesh G

    2016-12-01

    The self-etching primer system consists of etchant and primer dispersed in a single unit. The etching and priming are merged as a single step leading to fewer stages in bonding procedure and reduction in the number of steps that also reduces the chance of introduction of error, resulting in saving time for the clinician. It also results in smaller extent of enamel decalcification. To compare the Shear Bond Strength (SBS) of orthodontic bracket bonded with Self-Etch Primers (SEP) and conventional acid etching system and to study the surface appearance of teeth after debonding; etching with conventional acid etch and self-etch priming, using stereomicroscope. Five Groups (n=20) were created randomly from a total of 100 extracted premolars. In a control Group A, etching of enamel was done with 37% phosphoric acid and bonding of stainless steel brackets with Transbond XT (3M Unitek, Monrovia, California). Enamel conditioning in left over four Groups was done with self-etching primers and adhesives as follows: Group B-Transbond Plus (3M Unitek), Group C Xeno V+ (Dentsply), Group D-G-Bond (GC), Group E-One-Coat (Coltene). The Adhesive Remnant Index (ARI) score was also evaluated. Additionally, the surface roughness using profilometer were observed. Mean SBS of Group A was 18.26±7.5MPa, Group B was 10.93±4.02MPa, Group C was 6.88±2.91MPa while of Group D was 7.78±4.13MPa and Group E was 10.39±5.22MPa respectively. In conventional group ARI scores shows that over half of the adhesive was remaining on the surface of tooth (score 1 to 3). In self-etching primer groups ARI scores show that there was no or minor amount of adhesive remaining on the surface of tooth (score 4 and 5). SEP produces a lesser surface roughness on the enamel than conventional etching. However, statistical analysis shows significant correlation (p<0.001) of bond strength with surface roughness of enamel. All groups might show clinically useful SBS values and Transbond XT can be successfully used

  6. Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

    International Nuclear Information System (INIS)

    Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

    2016-01-01

    Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10 17 cm −3 is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10 17 cm −3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

  7. Dry Ice Etches Terrain

    Science.gov (United States)

    2007-01-01

    [figure removed for brevity, see original site] Figure 1 Every year seasonal carbon dioxide ice, known to us as 'dry ice,' covers the poles of Mars. In the south polar region this ice is translucent, allowing sunlight to pass through and warm the surface below. The ice then sublimes (evaporates) from the bottom of the ice layer, and carves channels in the surface. The channels take on many forms. In the subimage shown here (figure 1) the gas from the dry ice has etched wide shallow channels. This region is relatively flat, which may be the reason these channels have a different morphology than the 'spiders' seen in more hummocky terrain. Observation Geometry Image PSP_003364_0945 was taken by the High Resolution Imaging Science Experiment (HiRISE) camera onboard the Mars Reconnaissance Orbiter spacecraft on 15-Apr-2007. The complete image is centered at -85.4 degrees latitude, 104.0 degrees East longitude. The range to the target site was 251.5 km (157.2 miles). At this distance the image scale is 25.2 cm/pixel (with 1 x 1 binning) so objects 75 cm across are resolved. The image shown here has been map-projected to 25 cm/pixel . The image was taken at a local Mars time of 06:57 PM and the scene is illuminated from the west with a solar incidence angle of 75 degrees, thus the sun was about 15 degrees above the horizon. At a solar longitude of 219.6 degrees, the season on Mars is Northern Autumn.

  8. Silicon dioxide etching yield measurements with inductively coupled fluorocarbon plasmas

    International Nuclear Information System (INIS)

    Chae, Heeyeop; Vitale, Steven A.; Sawin, Herbert H.

    2003-01-01

    Oxide etching yield has been measured directly with inductively coupled fluorocarbon plasmas. The yields measurement technique of this work can provide useful information for feature profile evolution modeling, which is essential to understand various issues in oxide etching such as reactive ion etching (RIE) lag, inverse RIE lag, etch stop, microtrenching, bowing, etc. Etching and deposition yields per ion were measured using quartz crystal microbalance (QCM) as a function of ion bombardment energy, ion-to-neutral flux ratio, and ion-impinging angle. C 2 HF 5 , C 2 F 6 , C 2 H 4 F 2 , and C 4 F 8 were used for the oxide etching. Oxide etching mechanism with those gases is complex because etching and deposition are involved at the same time. In highly selective processes fluorocarbon deposition plays important role in determining etching characteristics. Two fluorocarbon deposition mechanisms are identified in this work: neutral deposition and ion-enhanced deposition. The low-energy ions are believed to enhance the deposition rates by creating active sites and fluorocarbon neutrals deposit on the active sites with higher sticking probability. A surface kinetic model is suggested to explain the ion-enhanced mechanism and shows good agreement with experimental data. Angular yield measurement shows that when fluorocarbon deposition is relatively severe, etching yield decreases significantly as the incident angle increases and deposit fluorocarbon at a high incident angle above 60 deg. C

  9. Post-Synthetic Anisotropic Wet-Chemical Etching of Colloidal Sodalite ZIF Crystals.

    Science.gov (United States)

    Avci, Civan; Ariñez-Soriano, Javier; Carné-Sánchez, Arnau; Guillerm, Vincent; Carbonell, Carlos; Imaz, Inhar; Maspoch, Daniel

    2015-11-23

    Controlling the shape of metal-organic framework (MOF) crystals is important for understanding their crystallization and useful for myriad applications. However, despite the many advances in shaping of inorganic nanoparticles, post-synthetic shape control of MOFs and, in general, molecular crystals remains embryonic. Herein, we report using a simple wet-chemistry process at room temperature to control the anisotropic etching of colloidal ZIF-8 and ZIF-67 crystals. Our work enables uniform reshaping of these porous materials into unprecedented morphologies, including cubic and tetrahedral crystals, and even hollow boxes, by an acid-base reaction and subsequent sequestration of leached metal ions. Etching tests on these ZIFs reveal that etching occurs preferentially in the crystallographic directions richer in metal-ligand bonds; that, along these directions, the etching rate tends to be faster on the crystal surfaces of higher dimensionality; and that the etching can be modulated by adjusting the pH of the etchant solution. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Monitoring bone morphogenetic protein-2 and -7, soluble receptor activator of nuclear factor-κB ligand and osteoprotegerin levels in the peri-implant sulcular fluid during the osseointegration of hydrophilic-modified sandblasted acid-etched and sandblasted acid-etched surface dental implants.

    Science.gov (United States)

    Dolanmaz, D; Saglam, M; Inan, O; Dundar, N; Alniacık, G; Gursoy Trak, B; Kocak, E; Hakki, S S

    2015-02-01

    The implant surface plays a major role in the biological response to titanium dental implants. The aim of this study was to investigate levels of soluble receptor activator of nuclear factor-κB ligand (sRANKL), osteoprotegerin (OPG), bone morphogenetic protein-2 (BMP-2) and -7 (BMP-7) in the peri-implant crevicular fluid (PICF) of different implants during the osseointegration period. Forty-seven patients (22 females and 25 males, mean age 47.34 ± 10.11) were included in this study. Forty-seven implants from two implant systems (group A1 (sandblasted acid-etched [SLA]-16), group A2 (hydrophilic-modified SLA [SLActive]-16), and group B (sandblasted acid-etched [SLA]-15) were placed using standard surgical protocols. PICF samples, plaque index, gingival index and probing depth measurements were obtained at 1 and 3 mo after surgery. PICF levels of sRANKL, OPG, BMP-2/-7 were analyzed by ELISA. No complications were observed during the healing period. No significant differences were observed in the PICF levels of sRANKL, OPG, BMP-2 and BMP-7 for all groups at any time point (p > 0.05). A significant decrease was observed in BMP-2 levels in group A1 (p implants reflects the degree of peri-implant inflammation, rather than differences in the implant surfaces. © 2014 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

  11. Determination of etching parameters for pulsed XeF2 etching of silicon using chamber pressure data

    Science.gov (United States)

    Sarkar, Dipta; Baboly, M. G.; Elahi, M. M.; Abbas, K.; Butner, J.; Piñon, D.; Ward, T. L.; Hieber, Tyler; Schuberth, Austin; Leseman, Z. C.

    2018-04-01

    A technique is presented for determination of the depletion of the etchant, etched depth, and instantaneous etch rate for Si etching with XeF2 in a pulsed etching system in real time. The only experimental data required is the pressure data collected temporally. Coupling the pressure data with the knowledge of the chemical reactions allows for the determination of the etching parameters of interest. Using this technique, it is revealed that pulsed etching processes are nonlinear, with the initial etch rate being the highest and monotonically decreasing as the etchant is depleted. With the pulsed etching system introduced in this paper, the highest instantaneous etch rate of silicon was recorded to be 19.5 µm min-1 for an initial pressure of 1.2 Torr for XeF2. Additionally, the same data is used to determine the rate constant for the reaction of XeF2 with Si; the reaction is determined to be second order in nature. The effect of varying the exposed surface area of Si as well as the effect that pressure has on the instantaneous etch rate as a function of time is shown applying the same technique. As a proof of concept, an AlN resonator is released using XeF2 pulses to remove a sacrificial poly-Si layer.

  12. Advanced dry etching studies for micro- and nano-systems

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted

    and even contaminate the surface with metal flakes after resist removal. Ion beam etching has also been used for etching of steel without any problems with redeposition. For steel the etch rate was low which reduced the selectivity to the photo resist. Sapphire, a crystal of aluminum oxide, has a very low...... sputter rate limiting the applicability of ion beam etching. Structuring of sapphire is however interesting for fabrication of prepatterned substrates for gallium nitride epitaxial growth, among others. Such a substrate needs a certain structure height which can be obtained by introducing reactive ion....... However, just generating an oxygen plasma does not result in a controllable etch and may give rise to a poor surface for later use. It may be necessary to introduce other gases such as SF6 to reduce surface roughness. Roughness can also be introduced by the mask in the form of redeposition of material...

  13. Reactive ion etching of microphotonic structures

    International Nuclear Information System (INIS)

    Du, J.; Glasscock, J.; Vanajek, J.; Savvides, N.

    2004-01-01

    Full text: Fabrication of microphotonic structures such as planar waveguides and other periodic structures based on silicon technology has become increasingly important due to the potential for integration of planar optical devices. We have fabricated various periodic microstructures on silicon wafers using standard optical lithography and reactive ion etching (RIE). For optical applications the surface roughness and the sidewall angle or steepness of microstructures are the most critical factors. In particular, sidewall roughness of the etched waveguide core accounts for most of the optical propagation loss. We show that by varying the main RIE parameters such as gas pressure, RF power and CF 4 /Ar/O 2 gas composition it is possible to produce microstructures with near-vertical sidewalls and very smooth surfaces. In addition to plasma etching conditions, poor edge quality of the mask often causes sidewall roughness. We employed Ni/Cr metal masks in these experiments for deep etching, and used Ar + ion milling instead of wet chemical etching to open the mask. This improves the edge quality of the mask and ultimately results in smooth sidewalls

  14. Microstructural changes in White Etching Cracks (WECs) and their relationship with those in Dark Etching Region (DER) and White Etching Bands (WEBs) due to Rolling Contact Fatigue (RCF)

    OpenAIRE

    Smelova, Viktorija; Schwedt, Alexander; Wang, Ling; Holweger, Walter; Mayer, Joachim

    2017-01-01

    Substantial microstructural changes, such as Dark Etching Region (DER), White Etching Bands (WEBs) and White Etching Cracks (WECs), can occur in typical bearing steels such as AISI 52100 and 4320 due to Rolling Contact Fatigue (RCF). Although it has been reported that DER and WEBs typically appear in bearings over extended rolling cycles (>100 × 106) as a result of material deterioration under high-stress RCF while WECs are found to occur in much earlier of bearing’s life (<20% the calc...

  15. Wafer scale oblique angle plasma etching

    Science.gov (United States)

    Burckel, David Bruce; Jarecki, Jr., Robert L.; Finnegan, Patrick Sean

    2017-05-23

    Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.

  16. Selectively-etched nanochannel electrophoretic and electrochemical devices

    Science.gov (United States)

    Surh, Michael P [Livermore, CA; Wilson, William D [Pleasanton, CA; Barbee, Jr., Troy W.; Lane, Stephen M [Oakland, CA

    2006-06-27

    Nanochannel electrophoretic and electrochemical devices having selectively-etched nanolaminates located in the fluid transport channel. The normally flat surfaces of the nanolaminate having exposed conductive (metal) stripes are selectively-etched to form trenches and baffles. The modifications of the prior utilized flat exposed surfaces increase the amount of exposed metal to facilitate electrochemical redox reaction or control the exposure of the metal surfaces to analytes of large size. These etched areas variously increase the sensitivity of electrochemical detection devices to low concentrations of analyte, improve the plug flow characteristic of the channel, and allow additional discrimination of the colloidal particles during cyclic voltammetry.

  17. The plasma etching methods for minimizing mask CD variation by cleaning process

    Science.gov (United States)

    Shin, Hyun D.; Jeong, Soo K.; Jung, Ho Y.; Kim, Sang P.; Yim, Dong G.

    2012-11-01

    There has been a growing demand for more precise Mask CD MTT (Critical Dimension Mean to Target) control by shrinking the semiconductor device. Generally, The CD MTT is determined by patterning process such as writing, develop, and etch. But, additional CD MTT variation often occurs by cleaning process after patterning process. As a result, it is important to preserve the CD MTT for minimizing CD variation by cleaning process. The cleaning process of photomask is becoming more critical for 32nm node and below because the size of defect and SRAF pattern is in the same range. In order to achieve high first cleaning pass yields, intensive cleaning method depending on media not physical force is still essential to photomask manufacturing and these cleaning processes bring about considerable CD MTT change. Therefore, it is necessary to increase the durability of MoSi material of attenuated HTPSM (Half Tone Phase Shift Mask) by the new surface treatment method. In this study, we presented the plasma etching technique for Cr strip etch in the 2nd process of the attenuated HTPSM for minimizing CD variation by cleaning process. Diverse dry etching processes are investigated to improve the durability of the MoSi patterns. In order to evaluate the surface modification of the MoSi film, surface compositions are analyzed by XPS (X-ray Photoelectron Spectroscopy), TOF-SIMS (Time of Flight Secondary Ion Mass Spectrometry), and EELS (Electron Energy Loss Spectroscopy). The variation of CD MTT and optical properties are also evaluated by CD SEM and AIMS (Aerial Image Measurement System), respectively. The XPS analysis shows that sidewall passivation films are formed during the main etch process and then modified at the over etch step and additional in-situ O2 plasma treatment. The concentration of the MoO3 is increased when over etch step and in-situ O2 plasma treatment are added. The difference of CD shift between initial measurement and 2nd measurement after cleaning process

  18. Unveiling the wet chemical etching characteristics of polydimethylsiloxane film for soft micromachining applications

    International Nuclear Information System (INIS)

    Kakati, A; Maji, D; Das, S

    2017-01-01

    Micromachining of a polydimethylsiloxane (PDMS) microstructure by wet chemical etching is explored for microelectromechanical systems (MEMS) and microfluidic applications. A 100 µ m thick PDMS film was patterned with different microstructure designs by wet chemical etching using a N-methyl-2-pyrrolidone (C 16 H 36 FN) and tetra-n-butylammonium fluoride (C 5 H 9 NO) mixture solution with 3:1 volume ratio after lithography for studying etching characteristics. The patterning parameters, such as etch rate, surface roughness, pH of etchant solution with time, were thoroughly investigated. A detailed study of surface morphology with etching time revealed nonlinear behaviour of the PDMS surface roughness and etch rate. A maximum rate of 1.45 µ m min −1 for 10 min etching with surface roughness of 360 nm was achieved. A new approach of wet chemical etching with pH controlled doped etchant was introduced for lower surface roughness of etched microstructures, and a constant etch rate during etching. Variation of the etching rate and surface roughness by pH controlled etching was performed by doping 5–15 gm l −1 of silicic acid (SiO 2xH2 O) into the traditional etchant solution. PDMS etching by silicic acid doped etchant solution showed a reduction in surface roughness from 400 nm to 220 nm for the same 15 µ m etching. This study is beneficial for micromachining of various MEMS and microfluidic structures such as micropillars, microchannels, and other PDMS microstructures. (paper)

  19. Overlapping double etch technique for evaluation of metallic alloys to stress corrosion cracking

    Science.gov (United States)

    Steeves, Arthur F.; Stewart, James C.

    1981-01-01

    A double overlapping etch zone technique for evaluation of the resistance of metallic alloys to stress corrosion cracking. The technique involves evaluating the metallic alloy along the line of demarcation between an overlapping double etch zone and single etch zone formed on the metallic alloy surface.

  20. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  1. Crystal growth vs. conventional acid etching: A comparative evaluation of etch patterns, penetration depths, and bond strengths

    Directory of Open Access Journals (Sweden)

    Devanna Raghu

    2008-01-01

    Full Text Available The present study was undertaken to investigate the effect on enamel surface, penetration depth, and bond strength produced by 37% phosphoric acid and 20% sulfated polyacrylic acid as etching agents for direct bonding. Eighty teeth were used to study the efficacy of the etching agents on the enamel surface, penetration depth, and tensile bond strength. It was determined from the present study that a 30 sec application of 20% sulfated polyacrylic acid produced comparable etching topography with that of 37% phosphoric acid applied for 30 sec. The 37% phosphoric acid dissolves enamel to a greater extent than does the 20% sulfated polyacrylic acid. Instron Universal testing machine was used to evaluate the bond strengths of the two etching agents. Twenty percent sulfated polyacrylic acid provided adequate tensile bond strength. It was ascertained that crystal growth can be an alternative to conventional phosphoric acid etching as it dissolves lesser enamel and provides adequate tensile bond strength.

  2. Effect of an Indirect Composite Resin Surface Treatment with Two Types of Lasers: Nd: YAG, Er:YAG and Acid Etching on the Microshear Bond Strength of a Resin Cement

    Directory of Open Access Journals (Sweden)

    AR Daneshkazemi

    2014-04-01

    Conclusion: The two Er:YAG and Nd: YAG lasers increased the bond strength. Though etching alone had no significant effect, the application of the laser Nd:YAG with etching increased the bond strength.

  3. Tin etching from metallic and oxidized scandium thin films

    Directory of Open Access Journals (Sweden)

    M. Pachecka

    2017-08-01

    Full Text Available The role of oxide on Sn adhesion to Sc surfaces was studied with in-situ ellipsometry, X-ray photoelectron spectroscopy and secondary electron microscopy. Sn etching with hydrogen radicals was performed on metallic Sc, metallic Sc with a native oxide, and a fully oxidized Sc layer. The results show that Sn adsorbs rather weakly to a non-oxidized Sc surface, and is etched relatively easily by atomic hydrogen. In contrast, the presence of native oxide on Sc allows Sn to adsorb more strongly to the surface, slowing the etching. Furthermore, thinner layers of scandium oxide result in weaker Sn adsorption, indicating that the layer beneath the oxide plays a significant role in determining the adsorption strength. Unexpectedly, for Sn on Sc2O3, and, to a lesser extent, for Sn on Sc, the etch rate shows a variation over time, which is explained by surface restructuring, temperature change, and hydrogen adsorption saturation.

  4. Realization of Ultraflat Plastic Film Using Dressed-Photon-Phonon-Assisted Selective Etching of Nanoscale Structures

    Directory of Open Access Journals (Sweden)

    Takashi Yatsui

    2015-01-01

    Full Text Available We compared dressed-photon-phonon (DPP etching to conventional photochemical etching and, using a numerical analysis of topographic images of the resultant etched polymethyl methacrylate (PMMA substrate, we determined that the DPP etching resulted in the selective etching of smaller scale structures in comparison with the conventional photochemical etching. We investigated the wavelength dependence of the PMMA substrate etching using an O2 gas. As the dissociation energy of O2 is 5.12 eV, we applied a continuous-wave (CW He-Cd laser (λ= 325 nm, 3.81 eV for the DPP etching and a 5th-harmonic Nd:YAG laser (λ= 213 nm, 5.82 eV for the conventional photochemical etching. From the obtained atomic force microscope images, we confirmed a reduction in surface roughness, Ra, in both cases. However, based on calculations involving the standard deviation of the height difference function, we confirmed that the conventional photochemical etching method etched the larger scale structures only, while the DPP etching process selectively etched the smaller scale features.

  5. Etch characteristics of BCB film using inductively coupled plasma

    International Nuclear Information System (INIS)

    Kang, Pil Seung; Kim, Dong Pyo; Kim, Kyoung Tae; Kim, Chang Il; Kim, Sang Gi

    2003-01-01

    The etching characteristics and mechanism of BCB thin films were investigated as a function of CF 4 /O 2 mixing ratio in ICP system. Maximum etch rate of 830 nm/min is obtained at the mixture of O 2 /CF 4 (=80%/20%). OES actinometry results showed that volume density of oxygen atoms fallows the same extreme behavior with the BCB etch rate, while the density of fluorine atoms changes monotonously. Therefore chemical destruction of BCB by oxygen atoms was proposed as the dominant etch mechanism. XPS analysis showed that the addition of CF 4 to O 2 helps to volatilize silicon atoms containing in BCB but leads to the formation of F-containing polymer layer. The profile of etched BCB film was close to 90 .deg. and the surface was clean

  6. The mechanism of selective corrugation removal by KOH anisotropic wet etching

    International Nuclear Information System (INIS)

    Shikida, M; Inagaki, N; Sasaki, H; Amakawa, H; Fukuzawa, K; Sato, K

    2010-01-01

    The mechanism of selective corrugation removal by anisotropic wet etching—which reduces a periodic corrugation, called 'scalloping', formed on the sidewalls of microstructures by the Bosch process in deep reactive-ion etching (D-RIE)—was investigated. In particular, the corrugation-removal mechanism was analyzed by using the etching rate distribution pattern, and two equations for predicting the corrugation-removal time by the etching were derived. A Si{1 0 0} wafer was first etched by D-RIE at a depth of 29.4 µm (60 cycles) to form the corrugation on the sidewall surface. The height and pitch of the corrugation were 196 and 494 nm, respectively. Selective removal of the corrugation by using 50% KOH (40 °C) was experimentally tried. The corrugation formed on Si{1 0 0} sidewall surfaces was gradually reduced in size as the etching progressed, and it was completely removed after 5 min of etching. Similarly, the corrugation formed on a Si{1 1 0} sidewall surface was also selectively removed by KOH etching (etching time: 3 min). The roughness value of the sidewall surface was reduced from 17.6 nm to a few nanometers by the etching. These results confirm that the corrugation-removal mechanism using anisotropic wet etching can be explained in terms of the distribution pattern of etching rate

  7. Ga+ beam lithography for nanoscale silicon reactive ion etching

    Science.gov (United States)

    Henry, M. D.; Shearn, M. J.; Chhim, B.; Scherer, A.

    2010-06-01

    By using a dry etch chemistry which relies on the highly preferential etching of silicon, over that of gallium (Ga), we show resist-free fabrication of precision, high aspect ratio nanostructures and microstructures in silicon using a focused ion beam (FIB) and an inductively coupled plasma reactive ion etcher (ICP-RIE). Silicon etch masks are patterned via Ga + ion implantation in a FIB and then anisotropically etched in an ICP-RIE using fluorinated etch chemistries. We determine the critical areal density of the implanted Ga layer in silicon required to achieve a desired etch depth for both a Pseudo Bosch (SF6/C4F8) and cryogenic fluorine (SF6/O2) silicon etching. High fidelity nanoscale structures down to 30 nm and high aspect ratio structures of 17:1 are demonstrated. Since etch masks may be patterned on uneven surfaces, we utilize this lithography to create multilayer structures in silicon. The linear selectivity versus implanted Ga density enables grayscale lithography. Limits on the ultimate resolution and selectivity of Ga lithography are also discussed.

  8. Metal-assisted etch combined with regularizing etch

    Energy Technology Data Exchange (ETDEWEB)

    Yim, Joanne; Miller, Jeff; Jura, Michael; Black, Marcie R.; Forziati, Joanne; Murphy, Brian; Magliozzi, Lauren

    2018-03-06

    In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.

  9. Effects of Etch-and-Rinse and Self-etch Adhesives on Dentin MMP-2 and MMP-9

    Science.gov (United States)

    Mazzoni, A.; Scaffa, P.; Carrilho, M.; Tjäderhane, L.; Di Lenarda, R.; Polimeni, A.; Tezvergil-Mutluay, A.; Tay, F.R.; Pashley, D.H.; Breschi, L.

    2013-01-01

    Auto-degradation of collagen matrices occurs within hybrid layers created by contemporary dentin bonding systems, by the slow action of host-derived matrix metalloproteinases (MMPs). This study tested the null hypothesis that there are no differences in the activities of MMP-2 and -9 after treatment with different etch-and-rinse or self-etch adhesives. Tested adhesives were: Adper Scotchbond 1XT (3M ESPE), PQ1 (Ultradent), Peak LC (Ultradent), Optibond Solo Plus (Kerr), Prime&Bond NT (Dentsply) (all 2-step etch-and-rinse adhesives), and Adper Easy Bond (3M ESPE), Tri-S (Kuraray), and Xeno-V (Dentsply) (1-step self-etch adhesives). MMP-2 and -9 activities were quantified in adhesive-treated dentin powder by means of an activity assay and gelatin zymography. MMP-2 and MMP-9 activities were found after treatment with all of the simplified etch-and-rinse and self-etch adhesives; however, the activation was adhesive-dependent. It is concluded that all two-step etch-and-rinse and the one-step self-etch adhesives tested can activate endogenous MMP-2 and MMP-9 in human dentin. These results support the role of endogenous MMPs in the degradation of hybrid layers created by these adhesives. PMID:23128110

  10. Development of chemically assisted etching method for GaAs-based optoelectronic devices

    International Nuclear Information System (INIS)

    Gaillard, M.; Rhallabi, A.; Elmonser, L.; Talneau, A.; Pommereau, F.; Pagnod-Rossiaux, Ph.; Bouadma, N.

    2005-01-01

    Chemically assisted ion beam etching of GaAs-based materials using Cl 2 reactive gas was has been experimentally and theoretically examined. The primary effort was the design of an etching system for high reproducibility and improved throughput. Characteristics of the etching process, i.e., etch rate, etch profiles, and surface morphology as a function of etching parameters, i.e., substrate temperature, Cl 2 flow rate, ion current density, and energy are reported. In addition, we have analyzed the etched surfaces qualitatively by Auger electron spectroscopy, and quantitatively by atomic force microscopy. The developed process yielded stoichiometric and smooth GaAs surfaces. Moreover, in order to understand the mechanism of the Cl 2 etching reaction with GaAs, a simulation of the etch profile evolution with time as function of etching parameters was carried out. Simulations were compared with experimentally derived data and were found to be in good agreement. Finally, the developed process was successfully applied to the fabrication of ridge waveguides GaAs/GaAlAs lasers with cw optical characteristics similar to wet chemical etched lasers

  11. Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas.

    Science.gov (United States)

    Li, Yang; Wang, Cong; Yao, Zhao; Kim, Hong-Ki; Kim, Nam-Young

    2014-01-01

    In this work, the inductively coupled plasma etching technique was applied to etch the barium titanate thin film. A comparative study of etch characteristics of the barium titanate thin film has been investigated in fluorine-based (CF4/O2, C4F8/O2 and SF6/O2) plasmas. The etch rates were measured using focused ion beam in order to ensure the accuracy of measurement. The surface morphology of etched barium titanate thin film was characterized by atomic force microscope. The chemical state of the etched surfaces was investigated by X-ray photoelectron spectroscopy. According to the experimental result, we monitored that a higher barium titanate thin film etch rate was achieved with SF6/O2 due to minimum amount of necessary ion energy and its higher volatility of etching byproducts as compared with CF4/O2 and C4F8/O2. Low-volatile C-F compound etching byproducts from C4F8/O2 were observed on the etched surface and resulted in the reduction of etch rate. As a result, the barium titanate films can be effectively etched by the plasma with the composition of SF6/O2, which has an etch rate of over than 46.7 nm/min at RF power/inductively coupled plasma (ICP) power of 150/1,000 W under gas pressure of 7.5 mTorr with a better surface morphology.

  12. Orientation Dependent Directed Etching of Aluminum

    International Nuclear Information System (INIS)

    Lee, Dong Nyung; Seo, Jong Hyun

    2009-01-01

    The direct-current electroetching of high purity aluminum in hot aqueous-chloride solution produces a high density of micrometer-wide tunnels whose walls are made up of the |100| planes and penetrate aluminum in the directions at rates of micrometer per second. In the process of the alternating-current pitting of aluminum, cathodic polarization plays an important role in the nucleation and growth of the pits during the subsequent polarization. The direct-current tunnel etching and alternating-current etching of aluminum are basically related to the formation of poorly crystallized or amorphous passive films. If the passive film forms on the wall, a natural misfit exists between the film and the aluminum substrate, which in turn gives rise to stress in both the film and the substrate. Even though the amorphous films do not have directed properties, their stresses are influenced by the substrate orientation. the films on elastically soft substrate are likely to be less stressed and more stable than those on elastically hard substrate. The hardest and softest planes of aluminum are the |111| and |100| planes, respectively. Therefore, the films on the |111| substrates are most likely to be attacked, and those on the |100| substrates, are least likely to be attacked. For the tunnel etching, it follows that the tunnel walls tend to be made of four closely packed |111| planes in order to minimize the surface energy, which gives rise to the tunnel etching

  13. Study on high-speed deep etching of GaN film by UV laser ablation

    Science.gov (United States)

    Zhang, J.; Sugioka, K.; Wada, S.; Tashiro, H.; Midorikawa, K.

    1998-06-01

    High-speed deep etching of GaN thin films by UV (266 nm) laser ablation followed by a treatment in HCl solution, was achieved. The etch rate was as high as 50 nm/pulse. Scanning electron microscopy and scanning probe microscopy measurement results indicate that the surface of the etched films was structurally well-defined and cleanly patterned. Micro-photoluminescence measurements of ablated samples revealed no severe damage to the optical properties or the crystal structure. In addition, coupling with VUV (133-184 nm) laser beams, the etch quality of GaN was markedly improved. The etch rate was 55 nm/pulse

  14. Histologic Evaluation of Human Pulp Response to Total Etch and Self Etch Adhesive Systems

    OpenAIRE

    Malekipour, Mohammad Reza; Razavi, Sayed Mohammad; Khazaei, Saber; Kazemi, Shantia; Behnamanesh, Maryam; Shirani, Farzaneh

    2013-01-01

    Background To investigate pulp response to the application of two types adhesive systems (total-etch and self-etch) in human premolar teeth. Materials and Methods Cavities limited to enamel walls in all margins with 2.5 mm depth were prepared on buccal surfaces of thirty three human premolars. The cavities were treated with the following adhesive. Single Bond (SB) and Prompt L-Pop (PLP). The teeth were extracted after 30 days and prepared due to histological technique. Results Pulp responses ...

  15. Binding of p-mercaptobenzoic acid and adenine to gold-coated electroless etched silicon nanowires studied by surface-enhanced Raman scattering.

    Science.gov (United States)

    Mohaček-Grošev, Vlasta; Gebavi, Hrvoje; Bonifacio, Alois; Sergo, Valter; Daković, Marko; Bajuk-Bogdanović, Danica

    2018-04-10

    Modern diagnostic tools ever aim to reduce the amount of analyte and the time needed for obtaining the result. Surface-enhanced Raman spectroscopy is a method that could satisfy both of these requirements, provided that for each analyte an adequate substrate is found. Here we demonstrate the ability of gold-sputtered silicon nanowires (SiNW) to bind p-mercaptobenzoic acid in 10 -3 , 10 -4 and 10 -5 M and adenine in 30 and 100μM concentrations. Based on the normal mode analysis, presented here for the first time, the binding of p-mercaptobenzoic acid is deduced. The intensity enhancement of the 1106cm -1 band is explained by involvement of the CS stretching deformation, and the appearance of the broad 300cm -1 band attributed to SAu stretching mode. Adenine SERS spectra demonstrate the existence of the 7H tautomer since the strongest band observed is at 736cm -1 . The adenine binding is likely to occur in several ways, because the number of observed bands in the 1200-1600cm -1 interval exceeds the number of observed bands in the normal Raman spectrum of the free molecule. Copyright © 2018 Elsevier B.V. All rights reserved.

  16. A spin-on photosensitive polymeric etch protection mask for anisotropic wet etching of silicon

    International Nuclear Information System (INIS)

    Dalvi-Malhotra, J; Zhong, X F; Planje, C; Yess, K; Brand, G

    2008-01-01

    Newly developed photosensitive etch protection materials have key advantages over standard photoresists typically used in today's MEMS applications. Using these new materials eliminates the need for silicon nitride (SiN) masks deposited via CVD processes, which require significant investments in processing equipment, utilize extreme processing conditions and contribute to an overall decrease in throughput. This new technology will enhance throughput by reducing the number of process steps and simplify the process flow with minimal impact on overall undercut performance. The polymeric coating serves as a SiN mask replacement for etching silicon substrates in alkaline anisotropic etchants such as KOH and TMAH. The undercut performance observed is larger than that of SiN when etched in KOH, but when alternative alkaline etchants such as TMAH are used, the undercut is identical (1–2% with respect to etch depth). Various factors, such as primer bake, topcoat final cure temperature, etchant concentration and substrate surface conditions, have all been shown to affect undercut results. An additional advantage of this new technology is that it can be easily reworked/removed by solvents, plasma etch, Nano-Strip®, Piranha and RCA cleaning solutions depending on where the removal takes place in the process

  17. Observation of etch pits in Fe-36wt%Ni Invar alloy

    Science.gov (United States)

    Lu, Dong-zhu; Wu, Min-jie

    2014-07-01

    To indirectly investigate the dislocation behavior of Fe-36wt%Ni Invar alloy by the etch pit method, polished Invar specimens were etched by a solution containing 4 g copper sulfate, 20 mL hydrochloric acid, and 20 mL deionized water for 2 min. Etch pits in the etched surfaces were observed. All the etch pits in one specific grain exhibited similar shapes, which are closely related to the grain orientations. These etch pits were characterized as dislocation etch pits. It was observed that etch pits arranged along grain boundaries, gathered at grain tips and strip-like etch pit clusters passed through a number of grains in the pure Invar specimens. After the addition of a small amount of alloying elements, the identification of a single dislocation etch pit is challenging compared with the pure Invar alloy. Thus, the observation of etch pits facilitates the investigation on the dislocation behavior of the pure Invar alloy. In addition, alloying elements may affect the densities and sizes of etch pits.

  18. Optimization of silver-assisted nano-pillar etching process in silicon

    Science.gov (United States)

    Azhari, Ayu Wazira; Sopian, Kamaruzzaman; Desa, Mohd Khairunaz Mat; Zaidi, Saleem H.

    2015-12-01

    In this study, a respond surface methodology (RSM) model is developed using three-level Box-Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert® software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H2O2), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H2O2 concentration and etching time. The predicted model is in good agreement with the experimental data where R2 is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant concentration or the etching time. This lack of uniformity could be attributed to the surface condition of the wafer. Optimization of the process parameters show adequate accuracy of the model with acceptable percentage errors of 6%, 59%, 1.8%, 38% and 61% for determination of the height, separation, size, the pore size and the etching rate respectively.

  19. Microtensile bond strength of etch-and-rinse and self-etch adhesives to artificially created carious dentin.

    Science.gov (United States)

    Erhardt, Maria Carolina Guilherme; Lobo, Maristela Maia; Goulart, Marcelo; Coelho-de-Souza, Fabio Herrmann; Valentino, Thiago Assuncao; Pisani-Proenca, Jatyr; Conceicao, Ewerton Nocchi; Pimenta, Luiz Andre Freire

    2014-01-01

    This article evaluates a pH-cycling model for simulation of caries-affected and caries-infected dentin (CAD and CID, respectively) surfaces, by comparing the bond strength of an etch-and-rinse and a self-etch adhesive system. For both adhesives, bonding to sound dentin (SD) showed that the microtensile bond strength (μTBS) values of SD, CAD, and CID were SD > CAD > CID (P self-etch bonding, as lower μTBS values were attained in CAD and CID.

  20. High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

    Science.gov (United States)

    Yeh, Chia-Pin; Lisker, Marco; Kalkofen, Bodo; Burte, Edmund P.

    2016-08-01

    Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal process conditions. The surface of the samples after etching was found to be clean under SEM inspection. It was also shown that the etch rate of iridium could be enhanced at higher process temperature and, at the same time, very high etching selectivity between aluminum etching mask and iridium could be achieved.

  1. High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

    Directory of Open Access Journals (Sweden)

    Chia-Pin Yeh

    2016-08-01

    Full Text Available Reactive ion etching (RIE technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal process conditions. The surface of the samples after etching was found to be clean under SEM inspection. It was also shown that the etch rate of iridium could be enhanced at higher process temperature and, at the same time, very high etching selectivity between aluminum etching mask and iridium could be achieved.

  2. ATMS software: Fuzzy Hough Transform in a hybrid algorithm for counting the overlapped etched tracks and orientation recognition

    International Nuclear Information System (INIS)

    Khayat, O.; Ghergherehchi, M.; Afarideh, H.; Durrani, S.A.; Pouyan, Ali A.; Kim, Y.S.

    2013-01-01

    A computer program named ATMS written in MATLAB and running with a friendly interface has been developed for recognition and parametric measurements of etched tracks in images captured from the surface of Solid State Nuclear Track Detectors. The program, using image analysis tools, counts the number of etched tracks and depending on the current working mode classifies them according to their radii (small object removal) or their axis (non-perpendicular or non-circular etched tracks), their mean intensity value and their orientation through the minor and major axes. Images of the detectors' surfaces are input to the code, which generates text and figure files as output, including the number of counted etched tracks with the associated track parameters, histograms and a figure showing edge and center of detected etched tracks. ATMS code is running hierarchically as calibration, testing and measurement modes to demonstrate the reliability, repeatability and adaptability. Fuzzy Hough Transform is used for the estimation of the number of etched tracks and their parameters, providing results even in cases that overlapping and orientation occur. ATMS code is finally converted to a standalone file which makes it able to run out of MATLAB environment. - Highlights: ► Presenting a novel code named ATMS for nuclear track measurements. ► Execution in three modes for generality, adaptability and reliability. ► Using Fuzzy Hough Transform for overlapping detection and orientation recognition. ► Using DFT as a filter for noise removal process in track images. ► Processing the noisy track images and demonstration of the presented code

  3. A comparison of orthodontic bracket shear bond strength on enamel deproteinized by 5.25% sodium hypochlorite using total etch and self-etch primer

    Science.gov (United States)

    Ongkowidjaja, F.; Soegiharto, B. M.; Purbiati, M.

    2017-08-01

    The shear bond strength (SBS) can be increased by removing protein pellicles from the enamel surface by deproteinization using 5.25% sodium hypochlorite (NaOCl). The SBS of a self-etch primer is lower than that of a total etch primer; nonetheless, it prevents white spot lesions. This study aimed to assess the SBS of the Anyetch (AE) total etch primer and FL-Bond II Shofu (FL) self-etch primer after enamel deproteinization using 5.25% NaOCl. Forty eight human maxillary first premolars were extracted, cleaned, and divided into four groups. In group A, brackets were bonded to the enamel without deproteinization before etching (A1: 10 teeth using total etch primer (AE); A2: 10 teeth using self-etch primer (FL)). In group B, brackets were bonded to the enamel after deproteinization with 5.25% NaOCl before etching (B1: 10 teeth using total etch primer (AE); B2: 10 teeth using self-etch primer (FL)). Brackets were bonded using Transbond XT, stored in artificial saliva for 24 h at 37°C, mounted on acrylic cylinders, and debonded using a Shimadzu AG-5000 universal testing machine. There were no significant differences in SBS between the total etch (AE) groups (p > 0.05) and between the self-etch (FL) groups (p > 0.05). There were significant differences in SBS between groups A and B. The mean SBS for groups A1, A2, B1, and B2 was 12.91±3.99, 4.46±2.47, 13.06±3.66, and 3.62±2.36 MPa, respectively. Deproteinization using NaOCl did not affect the SBS of the total etch primer (AE) group; it reduced the SBS of the self-etch primer (FL) group, but not with a statistically significant difference.

  4. Etching Effects During the Chemical Vapor Deposition of (100) Diamond

    Energy Technology Data Exchange (ETDEWEB)

    Battaile, C.C.; Srolovitz, D.J.; Oleinik, I.I.; Pettifor, D.G.; Sutton, A.P.; Harris, S.J.; Butler, J.E.

    1999-08-02

    Current theories of CVD growth on (100) diamond are unable to account for the numerous experimental observations of slow-growing, locally smooth (100)(2x1) films. In this paper they use quantum mechanical calculations of diamond surface thermochemistry and atomic-scale kinetic Monte Carlo simulations of deposition to investigate the efficacy of preferential etching as a mechanism that can help to reconcile this discrepancy. This etching mechanism allows for the removal of undercoordinated carbon atoms from the diamond surface. In the absence of etching, simulated growth on the (100)(2x1) surface is faster than growth on the (110) and (111) surfaces, and the (100) surface is atomically rough. When etching is included in the simulations, the (100) growth rates decrease to values near those observed experimentally, while the rates of growth on the other surfaces remain largely unaffected and similar to those observed experimentally. In addition, the etching mechanism promotes the growth of smooth (100) surface regions in agreement with numerous scanning probe studies.

  5. Etching technology for chromatography microchannels

    NARCIS (Netherlands)

    Tjerkstra, R.W.; de Boer, Meint J.; Berenschot, Johan W.; Gardeniers, Johannes G.E.; van den Berg, Albert; Elwenspoek, Michael Curt

    1997-01-01

    Half-circular channels, to be used for gas chromatography, were etched isotropically using a mixture of HF, HNO3 and H2O. Two wafers with half-circular channels were bonded on top of each other to yield channels with a circular cross-section. During etching the so-called `loading effect' was

  6. Naturally occurring mutations in large surface genes related to occult infection of hepatitis B virus genotype C.

    Directory of Open Access Journals (Sweden)

    Hong Kim

    Full Text Available Molecular mechanisms related to occult hepatitis B virus (HBV infection, particularly those based on genotype C infection, have rarely been determined thus far in the ongoing efforts to determine infection mechanisms. Therefore, we aim to elucidate the mutation patterns in the surface open reading frame (S ORF underlying occult infections of HBV genotype C in the present study. Nested PCRs were applied to 624 HBV surface antigen (HBsAg negative Korean subjects. Cloning and sequencing of the S ORF gene was applied to 41 occult cases and 40 control chronic carriers. Forty-one (6.6% of the 624 Korean adults with HBsAg-negative serostatus were found to be positive for DNA according to nested PCR tests. Mutation frequencies in the three regions labeled here as preS1, preS2, and S were significantly higher in the occult subjects compared to the carriers in all cases. A total of two types of deletions, preS1 deletions in the start codon and preS2 deletions as well as nine types of point mutations were significantly implicated in the occult infection cases. Mutations within the "a" determinant region in HBsAg were found more frequently in the occult subjects than in the carriers. Mutations leading to premature termination of S ORF were found in 16 occult subjects (39.0% but only in one subject from among the carriers (2.5%. In conclusion, our data suggest that preS deletions, the premature termination of S ORF, and "a" determinant mutations are associated with occult infections of HBV genotype C among a HBsAg-negative population. The novel mutation patterns related to occult infection introduced in the present study can help to broaden our understanding of HBV occult infections.

  7. Etching of germanium-tin using ammonia peroxide mixture

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  8. Relationship between deprotection and film thickness loss during plasma etching of positive tone chemically amplified resists

    International Nuclear Information System (INIS)

    Mahorowala, A.P.; Medeiros, D.R.

    2001-01-01

    Positive tone chemically amplified (CA) resists have demonstrated the sensitivity, contrast, and resolution necessary to print state-of-the-art subwavelength features using 248 nm and more recently 193 nm lithography. These materials are also being considered for printing sub-100 nm features with 157 nm and next-generation lithography technologies such as extreme ultraviolet and electron beam projection lithography. The basis for solubility differential and image formation in these resists is the acid catalyzed deprotection of labile protecting groups of an inherently base soluble polymer. The deprotection is effected by the photochemical generation of strong acid during the exposure process. Such acid-catalyzed deprotection reactions can also occur in unexposed resist areas when etched in a plasma. This can be due to UV exposure, high-energy ion bombardment, elevated substrate temperatures, or interaction of the resist surface with plasma species to form acidic moieties. Deprotection has been associated with resist mass loss and film shrinkage during plasma etching, leaving inadequate masking material for the entire etch step. In this article, we report the film thickness loss of several unexposed CA resists as a function of etch time in a variety of plasmas and correlate these data with film composition, monitored by Fourier transform infrared spectroscopy. These results are compared with theoretical predictions based on generally accepted deprotection mechanisms. Our findings indicate that the 'acidic' nature of certain plasmas such as Cl 2 /O 2 can result in deprotection in the resist film, even in the absence of a photoacid generator. Additionally, the data suggest that the nature of the resist polymer and, in turn, the identity of the deprotection products directly influence resist mass loss and etch rate linearity, both of which can be controlled by careful selection of resist materials

  9. Influence of water storage on fatigue strength of self-etch adhesives.

    Science.gov (United States)

    Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Scheidel, Donal D; Watanabe, Hidehiko; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    2015-12-01

    The purpose of this study was to determine enamel and dentin bond durability after long-term water storage using self-etch adhesives. Two single step self-etch adhesives (SU, Scotchbond Universal and GB, G-ӕnial Bond) and a two-step self-etch adhesive (OX, OptiBond XTR) were used. The shear bond strength (SBS) and shear fatigue strength (FS) of the enamel and dentin were obtained with and without phosphoric acid pre-etching prior to application of the adhesives. The specimens were stored in distilled water at 37 °C for 24 h, 6 months, and one year. A staircase method was used to determine the FS using a frequency of 10 Hz for 50,000 cycles or until failure occurred. The SBS and FS of enamel bonds were significantly higher with pre-etching, when compared to no pre-etching for the same water storage period. The FS of dentin bonds with pre-etching tended to decrease relative to no pre-etching at the same storage period. For the one year storage period, SU and GB with pre-etching showed significantly lower FS values than the groups without pre-etching. The influence of water storage on FS of the self-etch adhesives was dependent on the adhesive material, storage period and phosphoric acid pre-etching of the bonding site. Phosphoric acid pre-etching of enamel improves the effectiveness of self-etch adhesive systems. Inadvertent contact of phosphoric acid on dentin appears to reduce the ability of self-etch adhesives to effectively bond resin composite materials. Copyright © 2015 Elsevier Ltd. All rights reserved.

  10. Improved metal assisted chemical etching method for uniform, vertical and deep silicon structure

    International Nuclear Information System (INIS)

    Miao, Bin; Ding, Xiangzhen; Wu, Dongmin; Li, Jiadong; Zhang, Jian; Wu, Yihui; Lu, Wenhui

    2017-01-01

    This paper presents a preliminary result about ultra-deep etched microstructures on 〈1 0 0〉 silicon wafer based on metal assisted chemical etching (MaCE). Honeycomb hole arrays with 50 µ m width were successfully etched, as deep as 280 µ m. The porous defects on the patterned surface and the lateral etching on the sidewall were effectively suppressed by optimizing the etchant solution. The results in this paper indicate that 〈1 0 0〉 silicon can be etched vertically with smooth sidewalls by an etchant solution containing ethanol, instead of the conventional aqueous-based solution. This improved method of MaCE has potential application in large-scale Si etching as a supplementary method to the expensive and complicated dry etching method. (paper)

  11. Self-assembled monolayer resists and nanoscale lithography of silicon dioxide thin films by chemically enhanced vapor etching (CEVE)

    Science.gov (United States)

    Pan, M.; Yun, M.; Kozicki, M. N.; Whidden, T. K.

    1996-10-01

    We report on the use of electron-beam exposed monolayers of undecylenic acid in the etch rate enhancement of silicon dioxide films in HF vapor for the formation of nanoscale features in the oxide. Variations of the etching characteristics with electron beam parameters are examined and the results analyzed in terms of proposed models of the etching mechanism. Apparent variations in the relative concentrations of etch initiator with the thermal history of the samples prior to etching provides support for the dominant etch initiator within this system as the carboxylic acid moiety bound at the oxide surface. Other variations in the etching characteristics are discussed in terms of differences in localized concentrations of hydrocarbon crosslinks and the effect that this has upon the etch initiation. The process has been employed in the production of features in silicon dioxide surface masks with sizes down to 50 nm.

  12. Inductively coupled plasma etching of poly-SiC in SF6 chemistries

    Science.gov (United States)

    Kuah, S. H.; Wood, P. C.

    2005-07-01

    A study was made to find a low-cost and robust etching solution for silicon carbide (SiC) using a commercially available inductively coupled plasma etching tool. Sulfur hexafluoride (SF6) was selected because of its high degree of F dissociation and nonhazardous nature. A parametric study of the etching characteristics of poly-SiC in inductively coupled plasma (ICP) SF6 chemistries was performed. Etch chemistry was found to greatly affect etch rate, selectivity, and the postetch surface condition. Etch rates as high as 5884 A˚/min were achieved with high SiC/Cr selectivity (36) using a SF6/CF4/He gas mixture, but the etched surface was relatively rough (134 A˚ rms). He addition was found to increase the SiC etch rate, and this effect is believed to be caused by increased ionization of SF6 in the plasma and the resulting increases in the SF3+ and fluorine (F) radical concentrations. The formation of pillar-like structures and sidewall deposition was observed on the etched SiC surfaces under some conditions. These unwanted etch byproducts exhibited a high concentration of chromium (Cr) and fluorine. However, an argon (Ar) plasma preclean of the substrate, high ICP, and/or bias powers, and CF4 addition reduced the pillar formation significantly.

  13. Effect of additional etching and ethanol-wet bonding on the dentin bond strength of one-step self-etch adhesives.

    Science.gov (United States)

    Ahn, Joonghee; Jung, Kyoung-Hwa; Son, Sung-Ae; Hur, Bock; Kwon, Yong-Hoon; Park, Jeong-Kil

    2015-02-01

    This study examined the effects of additional acid etching on the dentin bond strength of one-step self-etch adhesives with different compositions and pH. The effect of ethanol wetting on etched dentin bond strength of self-etch adhesives was also evaluated. Forty-two human permanent molars were classified into 21 groups according to the adhesive types (Clearfil SE Bond [SE, control]; G-aenial Bond [GB]; Xeno V [XV]; Beauti Bond [BB]; Adper Easy Bond [AE]; Single Bond Universal [SU]; All Bond Universal [AU]), and the dentin conditioning methods. Composite resins were placed on the dentin surfaces, and the teeth were sectioned. The microtensile bond strength was measured, and the failure mode of the fractured specimens was examined. The data were analyzed statistically using two-way ANOVA and Duncan's post hoc test. In GB, XV and SE (pH ≤ 2), the bond strength was decreased significantly when the dentin was etched (p 0.05). In AU (pH = 3.2), additional etching increased the bond strength significantly (p self-etch adhesives. Ethanol wetting on etched dentin could create a stronger bonding performance of one-step self-etch adhesives for acid etched dentin.

  14. Etch bias inversion during EUV mask ARC etch

    Science.gov (United States)

    Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

    2017-07-01

    The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

  15. Predicting synergy in atomic layer etching

    Energy Technology Data Exchange (ETDEWEB)

    Kanarik, Keren J. [Lam Research Corp., Fremont, CA (United States); Tan, Samantha [Lam Research Corp., Fremont, CA (United States); Yang, Wenbing [Lam Research Corp., Fremont, CA (United States); Kim, Taeseung [Lam Research Corp., Fremont, CA (United States); Lill, Thorsten [Lam Research Corp., Fremont, CA (United States); Kabansky, Alexander [Lam Research Corp., Fremont, CA (United States); Hudson, Eric A. [Lam Research Corp., Fremont, CA (United States); Ohba, Tomihito [Lam Research Corp., Fremont, CA (United States); Nojiri, Kazuo [Lam Research Corp., Fremont, CA (United States); Yu, Jengyi [Lam Research Corp., Fremont, CA (United States); Wise, Rich [Lam Research Corp., Fremont, CA (United States); Berry, Ivan L. [Lam Research Corp., Fremont, CA (United States); Pan, Yang [Lam Research Corp., Fremont, CA (United States); Marks, Jeffrey [Lam Research Corp., Fremont, CA (United States); Gottscho, Richard A. [Lam Research Corp., Fremont, CA (United States)

    2017-03-27

    Atomic layer etching (ALE) is a multistep process used today in manufacturing for removing ultrathin layers of material. In this article, the authors report on ALE of Si, Ge, C, W, GaN, and SiO2 using a directional (anisotropic) plasma-enhanced approach. The authors analyze these systems by defining an “ALE synergy” parameter which quantifies the degree to which a process approaches the ideal ALE regime. This parameter is inspired by the ion-neutral synergy concept introduced in the 1979 paper by Coburn and Winters. ALE synergy is related to the energetics of underlying surface interactions and is understood in terms of energy criteria for the energy barriers involved in the reactions. Synergistic behavior is observed for all of the systems studied, with each exhibiting behavior unique to the reactant–material combination. By systematically studying atomic layer etching of a group of materials, the authors show that ALE synergy scales with the surface binding energy of the bulk material. This insight explains why some materials are more or less amenable to the directional ALE approach. Furthermore, they conclude that ALE is both simpler to understand than conventional plasma etch processing and is applicable to metals, semiconductors, and dielectrics.

  16. GaAs/AlGaAs ridge lasers with etched mirrors formed by an inductively coupled plasma reactor

    Science.gov (United States)

    Horst, S. C.; Agarwala, S.; King, O.; Fitz, J. L.; Smith, S. D.

    1997-09-01

    Etched mirrors for semiconductor lasers are necessary for optoelectronic integrated circuit applications. This letter reports on the use of an inductively coupled plasma (ICP) reactor to create etched mirrors on GaAs/AlGaAs ridge lasers. Etch chemistries consisting of boron trichloride and chlorine were used to achieve both smooth and vertical mirror surfaces. Optical measurements indicate that devices fabricated with ICP etched mirrors are comparable to devices formed by cleaved mirrors.

  17. The grand challenges of plasma etching: a manufacturing perspective

    International Nuclear Information System (INIS)

    Lee, Chris G N; Kanarik, Keren J; Gottscho, Richard A

    2014-01-01

    Plasma etching has been enabling nano-electronic fabrication since the 1980s; during this time, transistor size has shrunk by nearly two orders of magnitude, starting at 1.0 µm in the mid 80s to ∼0.01 µm today. The manufacturing of these devices requires overcoming a series of challenges, ranging from continuous innovation on device integration to extend Moore's law to breaking tradeoffs on the perennial challenge of aspect ratio-dependent etching. In this paper, we will review four key areas in etch manufacturing: uniformity, defects, surface precision and ‘sticky’/non-volatile etch materials. In the uniformity section, we will discuss the challenges for microscopic uniformity, such as localized feature dimension variations; macroscopic uniformity, such as performance at the extreme edge of the wafer; and repeatable uniformity, meaning wafer-to-wafer, lot-to-lot and chamber-to-chamber performance. While defect management is successful with in situ plasma cleans, one must be cognizant of the choice of clean chemistry. In surface precision, we look at the approach of atomic layer etching and how it can be successful in a manufacturing environment. Finally, in the non-volatile material section, we review technology drivers for DRAM (dynamic random access memory) and NAND flash memory in the microelectronics Si industry, with focus on the utilization of such materials and what it means to etch equipment manufacturers. (topical review)

  18. Nano silver-catalyzed chemical etching of polycrystalline silicon wafer for solar cell application

    Directory of Open Access Journals (Sweden)

    S. R. Chen

    2016-03-01

    Full Text Available Silver nanoparticles were deposited on the surface of polycrystalline silicon wafer via vacuum thermal evaporation and metal-catalyzed chemical etching (MCCE was conducted in a HF-H2O2 etching system. Treatment of the etched silicon wafer with HF transformed the textured structure on the surface from nanorods into nanocones. An etching time of 30 s and treatment with HF resulted in nanocones with uniform size distribution and a reflectivity as low as 1.98% across a spectral range from 300 to 1000 nm.

  19. Chemical etching of copper foils for single-layer graphene growth by chemical vapor deposition

    Science.gov (United States)

    Yoshihara, Naoki; Noda, Masaru

    2017-10-01

    Chemical etching on copper surface is essential as a pre-treatment for single-layer graphene growth by chemical vapor deposition (CVD). Here, we investigated the effect of chemical etching treatment on copper foils for single-layer graphene CVD growth. The chemical etching conditions, such as the type of chemical etchants and the treatment time, were found to strongly influence the graphene domain size. Moreover, a drastic change in the layer structure of graphene sheets, which was attributed to the surface morphology of the etched copper foil, was confirmed by graphene transmittance and Raman mapping measurements.

  20. Inductive couple plasma reactive ion etching characteristics of TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Garay, Adrian Adalberto; Hwang, Su Min; Chung, Chee Won, E-mail: cwchung@inha.ac.kr

    2015-07-31

    Changes in the inductively coupled plasma reactive ion etching characteristics of TiO{sub 2} thin films in response to the addition of HBr, Cl{sub 2} and C{sub 2}F{sub 6} to Ar gas were investigated. As the HBr, Cl{sub 2} and C{sub 2}F{sub 6} concentration increased, the etch rate increased; however, the etch profile degree of anisotropy followed a different trend. As HBr concentration increased, the greatest anisotropic etch profile was obtained at 100% HBr, while the greatest anisotropic etch profile was obtained at concentrations of 25% when etching was conducted under C{sub 2}F{sub 6} and Cl{sub 2}. Field emission scanning electron microscopy revealed that 25% C{sub 2}F{sub 6} generated the greatest vertical etch profile; hence, etch parameters were varied at this concentration. The effects of rf power, dc-bias voltage and gas pressure on the etch rate and etch profile were also investigated. The etch rate and degree of anisotropy in the etch profile increased with increasing rf power and dc-bias voltage and decreasing gas pressure. X-ray photoelectron spectroscopy analysis of the films etched under a C{sub 2}F{sub 6}/Ar gas mixture revealed the existence of etch byproducts containing F (i.e. TiF{sub x}) over the film. C{sub x}F{sub y} compounds were not detected on the film surface, probably due to contamination with atmospheric carbon. - Highlights: • Reactive ion etching of TiO{sub 2} films under HBr, C{sub 2}F{sub 6}, and Cl{sub 2} gases was studied. • Etch rate and etch profile of TiO{sub 2} films were investigated under each gas chemistry. • The highest degree of anisotropy was achieved at 25% C{sub 2}F{sub 6}/Ar. • Strong etch conditions at 25% C{sub 2}F{sub 6}/Ar increased etch rate and degree of anisotropy. • X-ray photoelectron spectroscopy revealed the existence of F-containing etch residues.

  1. Influence of Application Time and Etching Mode of Universal Adhesives on Enamel Adhesion.

    Science.gov (United States)

    Sai, Keiichi; Takamizawa, Toshiki; Imai, Arisa; Tsujimoto, Akimasa; Ishii, Ryo; Barkmeier, Wayne W; Latta, Mark A; Miyazaki, Masashi

    2018-01-01

    To investigate the influence of application time and etching mode of universal adhesives on enamel adhesion. Five universal adhesives, Adhese Universal, Bondmer Lightless, Clearfil Universal Bond Quick, G-Premio Bond, and Scotchbond Universal, were used. Bovine incisors were prepared and divided into four groups of ten teeth each. SBS, Ra, and SFE were determined after the following procedures: 1. self-etch mode with immediate air blowing after application (IA); 2. self-etch mode with prolonged application time (PA); 3. etch-and-rinse mode with IA; 4. etch-and-rinse mode with PA. After 24-h water storage, the bonded assemblies were subjected to shear bond strength (SBS) tests. For surface roughness (Ra) and surface free energy (SFE) measurements, the adhesives were simply applied to the enamel and rinsed with acetone and water before the measurements were carried out. Significantly higher SBS and Ra values were obtained with etch-and-rinse mode than with self-etch mode regardless of the application time or type of adhesive. Although most adhesives showed decreased SFE values with increased application time in self-etch mode, SFE values in etch-and-rinse mode were dependent on the adhesive type and application time. Etching mode, application time, and type of adhesive significantly influenced the SBS, Ra, and SFE values.

  2. Etching technology for chromatography microchannels

    OpenAIRE

    Tjerkstra, R.W.; de Boer, Meint J.; Berenschot, Johan W.; Gardeniers, Johannes G.E.; van den Berg, Albert; Elwenspoek, Michael Curt

    1997-01-01

    Half-circular channels, to be used for gas chromatography, were etched isotropically using a mixture of HF, HNO3 and H2O. Two wafers with half-circular channels were bonded on top of each other to yield channels with a circular cross-section. During etching the so-called `loading effect' was encountered: the etch rate depends on the local structure density. To solve this, extra structures were placed around the channels to create an equal structure density over the wafer and so prevent irregu...

  3. Influence of Different Etching Modes on Bond Strength to Enamel using Universal Adhesive Systems.

    Science.gov (United States)

    Diniz, Ana Cs; Bandeca, Matheus C; Pinheiro, Larissa M; Dos Santosh Almeida, Lauber J; Torres, Carlos Rg; Borges, Alvaro H; Pinto, Shelon Cs; Tonetto, Mateus R; De Jesus Tavarez, Rudys R; Firoozmand, Leily M

    2016-10-01

    The adhesive systems and the techniques currently used are designed to provide a more effective adhesion with reduction of the protocol application. The objective of this study was to evaluate the bond strength of universal adhesive systems on enamel in different etching modes (self-etch and total etch). The mesial and distal halves of 52 bovine incisors, healthy, freshly extracted, were used and divided into seven experimental groups (n = 13). The enamel was treated in accordance with the following experimental conditions: FUE-Universal System - Futurabond U (VOCO) with etching; FUWE - Futurabond U (VOCO) without etching; SB-Total Etch System - Single Bond 2 (3M); SBUE-Universal System - Single Bond Universal (3M ESPE) with etching; SBUWE - Single Bond Universal (3M ESPE) without etching; CLE-Self-etch System - Clearfil SE Bond (Kuraray) was applied with etching; CLWE - Clearfil SE Bond (Kuraray) without etching. The specimens were made using the composite spectrum TPH (Dentsply) and stored in distilled water (37 ± 1°C) for 1 month. The microshear test was performed using the universal testing machine EMIC DL 2000 with the crosshead speed of 0.5 mm/minute. The bond strength values were analyzed using statistical tests (Kruskal-Wallis test and Mann-Whitney test) with Bonferroni correction. There was no statistically significant difference between groups (p adhesive interface revealed that most failures occurred between the interface composite resin and adhesive. The universal adhesive system used in dental enamel varies according to the trademark, and the previous enamel etching for universal systems and the self-etch both induced greater bond strength values. Selective enamel etching prior to the application of a universal adhesive system is a relevant strategy for better performance bonding.

  4. Postoperative sensitivity of self etch versus total etch adhesive.

    Science.gov (United States)

    Yousaf, Ajmal; Aman, Nadia; Manzoor, Manzoor Ahmed; Shah, Jawad Ali; Dilrasheed

    2014-06-01

    To compare postoperative sensitivity following composite restoration placed in supra gingival class-V cavities using self etch adhesive and total etch adhesive. A randomized clinical trial. Operative Dentistry Department of Armed Forces Institute of Dentistry, Rawalpindi, from July to December 2009. A total of 70 patients having class-V supra gingival carious lesions were divided into two groups. Classes-V cavities not exceeding 3 mm were prepared. One treatment group was treated with self etch adhesive (adhe SE one Ivoclar) and the control group was treated with total-etch adhesive (Eco-Etch Ivoclar) after acid etching with 37% phosphoric acid. Light cured composite (Te-Econom Ivoclar) restoration was placed for both groups and evaluated for postoperative sensitivity immediately after restoration, after 24 hours and after one week. Data was recorded on visual analogue scale. Comparison of sensitivity between the two treatment groups on application cold stimulus after 24 hours of restoration showed significant difference; however, no statistically significant difference was observed at baseline, immediately after restoration and at 1 week follow-up with cold stimulus or compressed air application. Less postoperative sensitivity was observed at postoperative 24 hours assessment in restoration placed using SE adhesives compared to TE adhesives. Thus, the use of SE adhesives may be helpful in reducing postoperative sensitivity during 24 hours after restoration placement.

  5. Masking considerations in chemically assisted ion beam etching of GaAs/AlGaAs laser structures

    International Nuclear Information System (INIS)

    Behfar-Rad, A.; Wong, S.S.; Davis, R.J.; Wolf, E.D.; Cornell Univ., Ithaca, NY

    1989-01-01

    The use of photoresist, Cr, and SiO 2 as etch masks for GaAs/AlGaAs structures in chemically assisted ion beam etching is reported. The optimized etch with a photoresist mask results in a high degree of anisotropy and smooth sidewalls. However, the etched surface contains undesirable features. The etch with a Cr mask is also highly anisotropic, and the etched surface is free of features. The drawback with Cr masks is that the sidewalls are rough. Vertical and smooth sidewalls as well as a featureless surface are obtained with a SiO 2 mask. The SiO 2 mask has been employed to etch the facets of monolithic GaAs/AlGaAs-based laser structures

  6. Pattern inspection of etched multilayer EUV mask

    Science.gov (United States)

    Iida, Susumu; Hirano, Ryoichi; Amano, Tsuyoshi; Watanabe, Hidehiro

    2015-10-01

    Patterned mask inspection for an etched multilayer (ML) EUV mask was investigated. In order to optimize the mask structure from the standpoint of not only a pattern inspection by using a projection electron microscope (PEM), but also by considering the other fabrication processes using electron beam (EB) techniques such as CD metrology and mask repair, we employed a conductive layer between the ML and substrate. By measuring the secondary electron emission coefficients (SEECs) of the candidate materials for conductive layer, we evaluated the image contrast and the influence of charging effect. In the cases of 40-pair-ML, 16 nm sized extrusion and intrusion defects were found to be detectable more than 10 sigma in hp 44 nm, 40 nm, and 32 nm line and space (L/S) patterns. Reducing 40-pair-ML to 20-pair-ML degraded the image contrast and the defect detectability. However, by selecting B4C as a conductive layer, 16 nm sized defects remained detectable. These defects were also detected after the etched part was refilled with Si. Moreover, the simulation shows a high sensitivity for detecting the residual-type defects (etching residues). A double layer structure with 2.5-nm-thik B4C on metal film used as a conductive layer was found to have sufficient conductivity and also was found to be free from the surface charging effect and influence of native oxide.

  7. Shapes of agglomerates in plasma etching reactors

    International Nuclear Information System (INIS)

    Huang, F.Y.; Kushner, M.J.

    1997-01-01

    Dust particle contamination of wafers in reactive ion etching (RIE) plasma tools is a continuing concern in the microelectronics industry. It is common to find that particles collected on surfaces or downstream of the etch chamber are agglomerates of smaller monodisperse spherical particles. The shapes of the agglomerates vary from compact, high fractal dimension structures to filamentary, low fractal dimension structures. These shapes are important with respect to the transport of particles in RIE tools under the influence electrostatic and ion drag forces, and the possible generation of polarization forces. A molecular dynamics simulation has been developed to investigate the shapes of agglomerates in plasma etching reactors. We find that filamentary, low fractal dimension structures are generally produced by smaller (<100s nm) particles in low powered plasmas where the kinetic energy of primary particles is insufficient to overcome the larger Coulomb repulsion of a compact agglomerate. This is analogous to the diffusive regime in neutral agglomeration. Large particles in high powered plasmas generally produce compact agglomerates of high fractal dimension, analogous to ballistic agglomeration of neutrals. copyright 1997 American Institute of Physics

  8. Effect of different blood contaminated adherent surface treatments on shear bond strength of compomer and composite resin to dentin, using a self etching adhesive

    Directory of Open Access Journals (Sweden)

    Mortazavi V.

    2005-06-01

    Full Text Available Statement of Problem: Blood contamination is a common problem in dentistry that can decrease bond strength dramatically which may be affected by methods of decontamination as well. Purpose: The aim of this study was to evaluate and compare the influence of blood contamination on shear bond strength of composite and compomer to dentin using Prompt L-Pop as an adhesive system. Also, to assess the effectiveness of different surface treatments on the bond strength. Materials and Methods: In this experimental study, 120 molar teeth were sectioned to provide flat occlusal dentinal surfaces. Specimens were embedded in acrylic resin with the flat surface exposed. The dentinal expose surfaces were polished to 600 grit. The teeth were randomly divided into five groups of twelve specimens (F1–F5 for compomer material and five other groups (Z1- Z5 for composite resin. After application of Promt L-Pop to dentinal surfaces of specimens, the surfaces in all groups, except for F1 and Z1, (as controls were contaminated with human blood and then one of the following surface treatments was applied. Groups F2 and Z2 without any treatment, groups F3 and Z3 rinsing with water, groups F4 and Z4 rinsing with water and reapplication of adhesive, groups F5 and Z5 rinsing with NaOCl and using Prompt L-Pop again. Restorative materials were applied to treated surfaces using plastic molds. After thermocycling, shear bond strengths, mode of failures and morphology of dentin-material interfaces were evaluated. The data were statistically analyzed using Factorial analysis of Variance, One-Way ANOVA, Duncan, T-student and Chi-Square tests with P<0.05 as the limit of significance. Results: Compomer showed statistically significant higher bond strength in comparison to composite (P<0.001. Duncan test showed significant differences between all compomer groups, except between groups F4 and F5, and between all composite groups except for groups Z1 and Z4 and for groups Z2 and Z3

  9. Effect of Hydrofluoric Acid Etching Time on Titanium Topography, Chemistry, Wettability, and Cell Adhesion.

    Directory of Open Access Journals (Sweden)

    R Zahran

    Full Text Available Titanium implant surface etching has proven an effective method to enhance cell attachment. Despite the frequent use of hydrofluoric (HF acid, many questions remain unresolved, including the optimal etching time and its effect on surface and biological properties. The objective of this study was to investigate the effect of HF acid etching time on Ti topography, surface chemistry, wettability, and cell adhesion. These data are useful to design improved acid treatment and obtain an improved cell response. The surface topography, chemistry, dynamic wetting, and cell adhesiveness of polished Ti surfaces were evaluated after treatment with HF acid solution for 0, 2; 3, 5, 7, or 10 min, revealing a time-dependent effect of HF acid on their topography, chemistry, and wetting. Roughness and wetting increased with longer etching time except at 10 min, when roughness increased but wetness decreased. Skewness became negative after etching and kurtosis tended to 3 with longer etching time. Highest cell adhesion was achieved after 5-7 min of etching time. Wetting and cell adhesion were reduced on the highly rough surfaces obtained after 10-min etching time.

  10. Surfactant-enhanced control of track-etch pore morphology

    International Nuclear Information System (INIS)

    Apel', P.Yu.; Blonskaya, I.V.; Didyk, A.Yu.; Dmitriev, S.N.; Orelovich, O.L.; Samojlova, L.I.; Vutsadakis, V.A.; Root, D.

    2000-01-01

    The influence of surfactants on the process of chemical development of ion tracks in polymers is studied. Based on the experimental data, a mechanism of the surfactant effect on the track-etch pore morphology is proposed. In the beginning of etching the surfactant is adsorbed on the surface and creates a layer that is quasi-solid and partially protects the surface from the etching agent. However, some etchant molecules diffuse through the barrier and react with the polymer surface. This results in the formation of a small hole at the entrance to the ion track. After the hole has attained a few annometers in diameter, the surfactant molecules penetrate into the track and cover its walls. Further diffusion of the surfactant into the growing pore is hindered. The adsorbed surfactant layer is not permeable for large molecules. In contrast, small alkali molecules and water molecules diffuse into the track and provide the etching process enlarging the pore. At this stage the transport of the surfactant into the pore channel can proceed only due to the lateral diffusion in the adsorbed layer. The volume inside the pore is free of surfactant molecules and grows at a higher rate than pore entrance. After a more prolonged etching the bottle-like (or 'cigar-like') pore channels are formed. The bottle-like shape of the pore channels depends on the etching conditions such as alkali and surfactant concentration, temperature, and type of the surfactant. The use of surfactants enables one to produce track-etch membranes with improved flow rate characteristics compared with those having cylindrical pores with the same nominal pore diameters

  11. Adhesion of Porphyromonas gingivalis and Tannerella forsythia to dentin and titanium with sandblasted and acid etched surface coated with serum and serum proteins - An in vitro study.

    Science.gov (United States)

    Eick, Sigrun; Kindblom, Christian; Mizgalska, Danuta; Magdoń, Anna; Jurczyk, Karolina; Sculean, Anton; Stavropoulos, Andreas

    2017-03-01

    To evaluate the adhesion of selected bacterial strains incl. expression of important virulence factors at dentin and titanium SLA surfaces coated with layers of serum proteins. Dentin- and moderately rough SLA titanium-discs were coated overnight with human serum, or IgG, or human serum albumin (HSA). Thereafter, Porphyromonas gingivalis, Tannerella forsythia, or a six-species mixture were added for 4h and 24h. The number of adhered bacteria (colony forming units; CFU) was determined. Arg-gingipain activity of P. gingivalis and mRNA expressions of P. gingivalis and T. forsythia proteases and T. forsythia protease inhibitor were measured. Coating specimens never resulted in differences exceeding 1.1 log10 CFU, comparing to controls, irrespective the substrate. Counts of T. forsythia were statistically significantly higher at titanium than dentin, the difference was up to 3.7 log10 CFU after 24h (p=0.002). No statistically significant variation regarding adhesion of the mixed culture was detected between surfaces or among coatings. Arg-gingipain activity of P. gingivalis was associated with log10 CFU but not with the surface or the coating. Titanium negatively influenced mRNA expression of T. forsythia protease inhibitor at 24h (p=0.026 uncoated, p=0.009 with serum). The present findings indicate that: a) single bacterial species (T. forsythia) can adhere more readily to titanium SLA than to dentin, b) low expression of T. forsythia protease inhibitor may influence the virulence of the species on titanium SLA surfaces in comparison with teeth, and c) surface properties (e.g. material and/or protein layers) do not appear to significantly influence multi-species adhesion. Copyright © 2016 Elsevier Ltd. All rights reserved.

  12. One-step substrate nanofabrication and patterning of nanoparticles by lithographically controlled etching

    Energy Technology Data Exchange (ETDEWEB)

    Bianchi, M; Limones Herrero, D; Valle, F; Biscarini, F; Cavallini, M [CNR, Institute of Nanostructured Materials, Via P Gobetti 101, 40129 Bologna (Italy); Greco, P [SCRIBA Nanotecnologie S.r.l., Via P Gobetti 52/3, 40129 Bologna (Italy); Ingo, G M; Kaciulis, S, E-mail: m.cavallini@bo.ismn.cnr.it [CNR, Institute of Nanostructured Materials, 00015 Monterotondo Stazione, Roma (Italy)

    2011-09-02

    We propose an integrated top-down and bottom-up approach to single-step nanofabrication of complex nanostructures made of different materials. The process, termed lithographically controlled etching (LCE), starts with a drop of an etching solution cast on the surface to be patterned. By placing a polymeric mold on the substrate, the stamp protrusions come into contact with the surface, thus protecting it, whereas the surface beneath the mold recesses is exposed to a thin layer of etching solution, allowing the surface to be etched. By dispersing nanoparticles into the etching solution, these can be deposited and self-organize in the recesses on the substrate as these are excavated. We demonstrate here the fabrication of complex structures and nanowires 30 nm wide. Moreover, by exploiting capillary forces, it is possible to deposit nanoparticles at precise positions with respect to optically addressable microstructures, thus realizing a multiscale functional pattern.

  13. One-step substrate nanofabrication and patterning of nanoparticles by lithographically controlled etching

    International Nuclear Information System (INIS)

    Bianchi, M; Limones Herrero, D; Valle, F; Biscarini, F; Cavallini, M; Greco, P; Ingo, G M; Kaciulis, S

    2011-01-01

    We propose an integrated top-down and bottom-up approach to single-step nanofabrication of complex nanostructures made of different materials. The process, termed lithographically controlled etching (LCE), starts with a drop of an etching solution cast on the surface to be patterned. By placing a polymeric mold on the substrate, the stamp protrusions come into contact with the surface, thus protecting it, whereas the surface beneath the mold recesses is exposed to a thin layer of etching solution, allowing the surface to be etched. By dispersing nanoparticles into the etching solution, these can be deposited and self-organize in the recesses on the substrate as these are excavated. We demonstrate here the fabrication of complex structures and nanowires 30 nm wide. Moreover, by exploiting capillary forces, it is possible to deposit nanoparticles at precise positions with respect to optically addressable microstructures, thus realizing a multiscale functional pattern.

  14. Comparison between universal adhesives and two-step self-etch adhesives in terms of dentin bond fatigue durability in self-etch mode.

    Science.gov (United States)

    Tsujimoto, Akimasa; Barkmeier, Wayne W; Takamizawa, Toshiki; Watanabe, Hidehiko; Johnson, William W; Latta, Mark A; Miyazaki, Masashi

    2017-06-01

    This aim of this study was to compare universal adhesives and two-step self-etch adhesives in terms of dentin bond fatigue durability in self-etch mode. Three universal adhesives - Clearfil Universal, G-Premio Bond, and Scotchbond Universal Adhesive - and three-two-step self-etch adhesives - Clearfil SE Bond, Clearfil SE Bond 2, and OptiBond XTR - were used. The initial shear bond strength and shear fatigue strength of resin composite bonded to adhesive on dentin in self-etch mode were determined. Scanning electron microscopy observations of fracture surfaces after bond strength tests were also made. The initial shear bond strength of universal adhesives was material dependent, unlike that of two-step self-etch adhesives. The shear fatigue strength of Scotchbond Universal Adhesive was not significantly different from that of two-step self-etch adhesives, unlike the other universal adhesives. The shear fatigue strength of universal adhesives differed depending on the type of adhesive, unlike those of two-step self-etch adhesives. The results of this study encourage the continued use of two-step self-etch adhesive over some universal adhesives but suggest that changes to the composition of universal adhesives may lead to a dentin bond fatigue durability similar to that of two-step self-etch adhesives. © 2017 Eur J Oral Sci.

  15. Morphological Evaluation of the Adhesive/Enamel interfaces of Two-step Self-etching Adhesives and Multimode One-bottle Self-etching Adhesives.

    Science.gov (United States)

    Sato, Takaaki; Takagaki, Tomohiro; Matsui, Naoko; Hamba, Hidenori; Sadr, Alireza; Nikaido, Toru; Tagami, Junji

    To evaluate the acid-base resistant zone (ABRZ) at the adhesive/enamel interface of self-etching adhesives with or without prior phosphoric acid etching. Four adhesives were used in 8 groups: Clearfil SE Bond (SEB), Optibond XTR (XTR), Scotchbond Universal Adhesive (SBU), and Clearfil BOND SE ONE (ONE) without prior phosphoric-acid etching, and each adhesive with phosphoric acid etching for 10 s (P-SEB, P-XTR, P-SBU and P-ONE, respectively). After application of self-etching adhesives on ground enamel surfaces of human teeth, a flowable composite was placed. For observation of the acid-base resistant zone (ABRZ), the bonded interface was exposed to demineralizing solution (pH 4.5) for 4.5 h, followed by 5% NaOCl with ultrasonication for 20 min. After the acid-base challenge, morphological attributes of the interface were observed using SEM. ABRZ formation was confirmed in all groups. The funnel-shaped erosion beneath the interface was present in SBU and ONE, where nearly 10 to 15 μm of enamel was dissolved. With phosphoric acid etching, the ABRZs were obviously thicker compared with no phosphoric acid etching. Enamel beneath the bonding interface was more susceptible to acid dissolution in SBU and ONE. In the case of the one-bottle self-etching adhesives and universal adhesives that intrinsically have higher pH values, enamel etching should be recommended to improve the interfacial quality.

  16. The high surface energy of NiO {110} facets incorporated into TiO{sub 2} hollow microspheres by etching Ti plate for enhanced photocatalytic and photoelectrochemical activity

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jian; Cui, Hongzhi, E-mail: cuihongzhi1965@163.com; Song, Xiaojie; Wei, Na; Tian, Jian, E-mail: jiantian@sdust.edu.cn

    2017-02-28

    Highlights: • NiO/TiO{sub 2} hollow microspheres were fabricated by etching Ti plate. • The incorporated NiO nanoparticles exposed high surface energy {110} facets. • The p–n junction catalysts improved photoelectrochemical and photocatalytic activity. • Using this synthesis strategy, other mixed semiconducting metal oxide microspheres. - Abstract: We present a rational design for the controllable synthesis of NiO/TiO{sub 2} hollow microspheres (NTHMs) with Ti plate via a one-pot template-free synthesis strategy. Specifically, to enhance the formation of hollow microspheres, part of the titanium source is provided by the Ti plate. The hollow spherical NiO/TiO{sub 2} particles possess unique microstructural characteristics, namely, a higher specific surface area (∼65.82 m{sup 2} g{sup −1}), a larger mesoporous structure (∼7.79 nm), and hierarchical nanoarchitectures connected with mesopores within the shell (monodispersed size of ∼1 μm and shell thickness of ∼80 nm). In addition, as a cocatalyst for improved catalytic activity, the incorporated NiO nanoparticles with exposed high surface energy {110} facets displayed an outstanding performance. It has been proven that this facile nanostructure possesses remarkably high photoelectrochemical and photocatalytic activities. The main mechanism for enhancement of photocatalytic activity is attributed to the construction of p-n junctions with an inner electric field between TiO{sub 2} and NiO, which can dramatically enhance the separation efficiency of the photogenerated electron-hole pairs. This strategy could be applied to fabricate mixed metal oxide hollow microspheres toward the photoelectrochemical catalysis.

  17. Effect of process parameters on sidewall damage in deep silicon etch

    International Nuclear Information System (INIS)

    Meng, Lingkuan; Yan, Jiang

    2015-01-01

    Sidewall damage caused in deep reactive ion silicon etch was investigated by varying etch cycle time, bias power, etch pressure and SF 6 flow rate using the Bosch process in a uniquely designed, inductively coupled plasma reactor. The effects of these process parameters on the etch profile and sidewall angle were also studied for high density metal–insulator–metal capacitor structure. By choosing the proper etch cycle time of 2 s, it was observed that the sidewall damage was very sensitive to these etch process parameters. As bias power increased, the sidewall damage increased gradually. Especially, at the bias power of 500 W, a dual bowing shape with severe sidewall damage was seen, which might be due to a combination of two mechanisms: the formation of a redeposition region and a secondary ion etch effect. With increasing pressure, the sidewall damage was not always located in a specific depth range but distributed along almost the whole trench sidewall. An etch pressure below 80 mTorr was favorably recommended for reducing the extent of the sidewall damage. In addition, we found that an appropriate SF 6 flow rate was also very beneficial to the realization of a smooth trench sidewall when it was controlled within an appropriate range. Based on these investigations, an acceptable etch condition could be selected to achieve a nearly vertical etch profile as well as a smooth sidewall surface. (paper)

  18. Etching behaviour of alpha-recoil tracks in natural dark mica studied via artificial ion tracks

    International Nuclear Information System (INIS)

    Lang, M.; Glasmacher, U.A.; Neumann, R.; Wagner, G.A.

    2003-01-01

    Alpha-recoil tracks (ARTs) created by the α-decay of U, Th, and their daughter nuclei, are used by a new dating method to determine the formation age of dark mica bearing Quaternary and Neogene volcanic rocks and the cooling age of plutonic and metamorphic rocks [Chem. Geol. 166 (2000) 127, Science 155 (1967) 1103]. The age equation combines the volumetric density of ARTs with the U and Th contents. Etching latent ARTs (diameter 30-100 nm) in the mica mineral phlogopite by HF and measuring the areal density of triangular etch pits by optical and scanning force microscopy (SFM) leads to a linear growth of ART areal density versus etching time. The ART volume density is a function of the slope of the areal density and the etching rate (v eff ). Therefore, the determination of v eff is essential for the calculation of an age value. To determine the etching parameters such as etching efficiency and v eff , phlogopite samples were irradiated with 80 keV Au ions. Irradiated surfaces were etched with 4% HF at 23±2 deg. C during successive time intervals and after each interval studied with SFM. The etching rate v eff was determined by different techniques. To evaluate the threshold of etchability, the energy losses of the Au ions and α-recoil nuclei in phlogopite were calculated with the SRIM00 code. The etching efficiency of the Au ion tracks was then used to predict the corresponding etching efficiency of the natural radioactive nuclei

  19. Study of the roughness in a photoresist masked, isotropic, SF6-based ICP silicon etch

    DEFF Research Database (Denmark)

    Larsen, Kristian Pontoppidan; Petersen, Dirch Hjorth; Hansen, Ole

    2006-01-01

    In this paper we study the etching behavior and the resulting roughness in photoresist-masked isotropic silicon plasma etch performed in an inductively coupled plasma (ICP) etcher using SF6. We report detailed observations of the resulting roughness for various etching parameters, covering......: pressure from 2.5 to 70 mTorr, SF6 flow rate from 50 to 300 sccm, platen power from 0 to 16 W, and ICP power from 1000 to 3000 W. Etch processes with a normalized roughness below 0.005 were found at low pressure, p = 10 mTorr, while larger normalized roughness, above 0.02, occurred at higher pressures, p...

  20. Ion track etching revisited: I. Correlations between track parameters in aged polymers

    Science.gov (United States)

    Fink, D.; Muñoz H., G.; García A., H.; Vacik, J.; Hnatowicz, V.; Kiv, A.; Alfonta, L.

    2018-04-01

    Some yet poorly understood problems of etching of pristine and swift heavy ion track-irradiated aged polymers were treated, by applying conductometry across the irradiated foils during etching. The onset times of etchant penetration across pristine foils, and the onset times of the different etched track regimes in irradiated foils were determined for polymers of various proveniences, fluences and ages, as well as their corresponding etching speeds. From the results, correlations of the parameters with each other were deduced. The normalization of these parameters enables one to compare irradiated polymer foils of different origin and treatment with one another. In a number of cases, also polymeric gel formation and swelling occur which influence the track etching behaviour. The polymer degradation during aging influences the track etching parameters, which differ from each other on both sides of the foils. With increasing sample age, these differences increase.

  1. Fabrication of ordered nanoporous anodic alumina prepatterned by mold-assisted chemical etching

    Directory of Open Access Journals (Sweden)

    Leu Ing-Chi

    2011-01-01

    Full Text Available Abstract In this article, a simple and cost-effective method to create patterned nanoindentations on Al surface via mold-assisted chemical etching process is demonstrated. This report shows the reaction-diffusion method which formed nanoscale shallow etch pits by the absorption/liberation behaviors of chemical etchant in poly(dimethylsiloxane stamp. During subsequent anodization, it was possible to obtain the ordered nanopore arrays with 277 nm pitch that were guided by the prepatterned etch pits. The prepatterned etch pits obtained can guide the growth of AAO nanopores during anodization and facilitate the preparation of ordered nanopore arrays.

  2. Low-Roughness Plasma Etching of HgCdTe Masked with Patterned Silicon Dioxide

    Science.gov (United States)

    Ye, Z. H.; Hu, W. D.; Yin, W. T.; Huang, J.; Lin, C.; Hu, X. N.; Ding, R. J.; Chen, X. S.; Lu, W.; He, L.

    2011-08-01

    A novel mask technique utilizing patterned silicon dioxide films has been exploited to perform mesa etching for device delineation and electrical isolation of HgCdTe third-generation infrared focal-plane arrays (IRFPAs). High-density silicon dioxide films were deposited at temperature of 80°C, and a procedure for patterning and etching of HgCdTe was developed by standard photolithography and wet chemical etching. Scanning electron microscopy (SEM) showed that the surfaces of inductively coupled plasma (ICP) etched samples were quite clean and smooth. Root-mean-square (RMS) roughness characterized by atomic force microscopy (AFM) was less than 1.5 nm. The etching selectivity between a silicon dioxide film and HgCdTe in the samples masked with patterned silicon dioxide films was greater than 30:1. These results show that the new masking technique is readily available and promising for HgCdTe mesa etching.

  3. Optimization of silver-assisted nano-pillar etching process in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Azhari, Ayu Wazira, E-mail: ayuwazira@unimap.edu.my [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi, Selangor 43650 (Malaysia); School of Environmental Engineering, Universiti Malaysia Perlis, 01000, Kangar, Perlis (Malaysia); Sopian, Kamaruzzaman [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi, Selangor 43650 (Malaysia); Desa, Mohd Khairunaz Mat [School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Nibong Tebal, Pulau Pinang, 14300 (Malaysia); Zaidi, Saleem H. [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi, Selangor 43650 (Malaysia)

    2015-12-01

    Graphical abstract: - Highlights: • Statistical analysis for synthesis of nano-pillar in crystalline Si substrates is presented. • Model is in good agreement with experimental for the etching rate and lateral etching respectively. • Optimum values for all parameters in fabrication of nanostructured Si are attained. - Abstract: In this study, a respond surface methodology (RSM) model is developed using three-level Box–Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert{sup ®} software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H{sub 2}O{sub 2}), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H{sub 2}O{sub 2} concentration and etching time. The predicted model is in good agreement with the experimental data where R{sup 2} is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant

  4. Site-controlled fabrication of silicon nanotips by indentation-induced selective etching

    Science.gov (United States)

    Jin, Chenning; Yu, Bingjun; Liu, Xiaoxiao; Xiao, Chen; Wang, Hongbo; Jiang, Shulan; Wu, Jiang; Liu, Huiyun; Qian, Linmao

    2017-12-01

    In the present study, the indentation-induced selective etching approach is proposed to fabricate site-controlled pyramidal nanotips on Si(100) surface. Without any masks, the site-controlled nanofabrication can be realized by nanoindentation and post etching in potassium hydroxide (KOH) solution. The effect of indentation force and etching time on the formation of pyramidal nanotips was investigated. It is found that the height and radius of the pyramidal nanotips increase with the indentation force or etching time, while long-time etching can lead to the collapse of the tips. The formation of pyramidal tips is ascribed to the anisotropic etching of silicon and etching stop of (111) crystal planes in KOH aqueous solution. The capability of this fabrication method was further demonstrated by producing various tip arrays on silicon surface by selective etching of the site-controlled indent patterns, and the maximum height difference of these tips is less than 10 nm. The indentation-induced selective etching provides a new strategy to fabricate well site-controlled tip arrays for multi-probe SPM system, Si nanostructure-based sensors and high-quality information storage.

  5. Study of surfactant-added TMAH for applications in DRIE and wet etching-based micromachining

    Science.gov (United States)

    Tang, B.; Shikida, M.; Sato, K.; Pal, P.; Amakawa, H.; Hida, H.; Fukuzawa, K.

    2010-06-01

    In this paper, etching anisotropy is evaluated for a number of different crystallographic orientations of silicon in a 0.1 vol% Triton-X-100 added 25 wt% tetramethylammonium hydroxide (TMAH) solution using a silicon hemisphere. The research is primarily aimed at developing advanced applications of wet etching in microelectromechanical systems (MEMS). The etching process is carried out at different temperatures in the range of 61-81 °C. The etching results of silicon hemisphere and different shapes of three-dimensional structures in {1 0 0}- and {1 1 0}-Si surfaces are analyzed. Significantly important anisotropy, different from a traditional etchant (e.g. pure KOH and TMAH), is investigated to extend the applications of the wet etching process in silicon bulk micromachining. The similar etching behavior of exact and vicinal {1 1 0} and {1 1 1} planes in TMAH + Triton is utilized selectively to remove the scalloping from deep reactive-ion etching (DRIE) etched profiles. The direct application of the present research is demonstrated by fabricating a cylindrical lens with highly smooth etched surface finish. The smoothness of a micro-lens at different locations is measured qualitatively by a scanning electron microscope and quantitatively by an atomic force microscope. The present paper provides a simple and effective fabrication method of the silicon micro-lens for optical MEMS applications.

  6. Femtosecond laser etching of dental enamel for bracket bonding.

    Science.gov (United States)

    Kabas, Ayse Sena; Ersoy, Tansu; Gülsoy, Murat; Akturk, Selcuk

    2013-09-01

    The aim is to investigate femtosecond laser ablation as an alternative method for enamel etching used before bonding orthodontic brackets. A focused laser beam is scanned over enamel within the area of bonding in a saw tooth pattern with a varying number of lines. After patterning, ceramic brackets are bonded and bonding quality of the proposed technique is measured by a universal testing machine. The results are compared to the conventional acid etching method. Results show that bonding strength is a function of laser average power and the density of the ablated lines. Intrapulpal temperature changes are also recorded and observed minimal effects are observed. Enamel surface of the samples is investigated microscopically and no signs of damage or cracking are observed. In conclusion, femtosecond laser exposure on enamel surface yields controllable patterns that provide efficient bonding strength with less removal of dental tissue than conventional acid-etching technique.

  7. Comparative study of smear layer removal by different etching modalities and Er:YAG laser irradiation on the root surface: a scanning electron microscopy study

    International Nuclear Information System (INIS)

    Theodoro, Leticia Helena

    2001-01-01

    The aim of this study was to compare the effects of citric acid, EDTA, citric acid with tetracycline, and Er:YAG laser to smear layer removal on the root surface after scaling with manual instruments by SEM. Thirty specimens (n=30) of root surface before scaling were divided into 6 groups (n=5). The Control Group (G1) was not treated; Group 2 (G2) was conditioned with citric acid gel 24%, pH1, during 2 minutes; Group 3 (G3) was conditioned with EDTA gel 24%, pH 7, during 2 minutes; Group 4 (G4) was conditioned with citric acid and tetracycline gel 50%, pH1 during 2 minutes; Group 5 (G5) was irradiated with Er:YAG laser (2.94 μm), 47 mJ/10 Hz, focused, under water spray during 15 seconds and fluence of 0.58 J/cm 2 ; Group 6 (G6) was irradiated with Er:YAG laser (2.94μm), 83 mJ/10 Hz, focused, under water spray during 15 seconds and fluence of 1.03 J/cm 2 . The micrographic were analyzed by scores and following the statistical analysis with Kruskal Wallis (p<0.05) H=20,31. The G1 was significantly different of all groups (28.0); the G2 (13.4), G3 (11.7), and G4 (13.6) showed no difference in relation to G5 (20.3) and G6 (6.0), but the G6 was significantly different from G5. From the results, it can be conclude that: 1) there was intensity smear layer after scaling and root planing; 2) all treatments were effective to smear layer remove with significantly difference to G2, G3, G4, G5 and G6; G2, G3 and G4 were not statistically different from G5 and G6; 3) G6 was more effective in the smear layer remotion in relation to G5 and both presented irregular root surface. (author)

  8. The effect of ArF laser irradiation (193 nm) on the photodegradation and etching properties of alpha-irradiated CR-39 detectors

    Energy Technology Data Exchange (ETDEWEB)

    Shakeri Jooybari, B. [Department of Energy Engineering and Physics, Amirkabir University of Technology, P.O. Box 15875-4413, Tehran, Islamic Republic of Iran (Iran, Islamic Republic of); Nuclear Science and Technology Research Institute (NSRT), Tehran, Islamic Republic of Iran (Iran, Islamic Republic of); Ghergherehchi, M. [College of Information and Technology/ school of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon (Korea, Republic of); Afarideh, H., E-mail: hafarideh@aut.ac.ir [Department of Energy Engineering and Physics, Amirkabir University of Technology, P.O. Box 15875-4413, Tehran, Islamic Republic of Iran (Iran, Islamic Republic of); Lamehi-Rachti, M. [Nuclear Science and Technology Research Institute (NSRT), Tehran, Islamic Republic of Iran (Iran, Islamic Republic of)

    2015-01-01

    The effects of ArF laser irradiation (λ=193nm) at various fluences (energy dose or energy density) on the etching properties of pre-exposed (laser + alpha) CR-39 detectors were studied. First, UV–Vis and Fourier transform infrared (FTIR) spectra were acquired for non-laser-irradiated and laser-irradiated samples to detect the influence of the ArF laser on the chemical modification of the CR-39. Changes observed in the spectra indicated that the predominant process that occurred upon ArF laser irradiation was a bond-scission process. Thereafter, the mean track and bulk etching parameters were experimentally measured in ArF-laser-irradiated CR-39 detectors exposed to an alpha source ({sup 241}Am, E = 5.49 MeV). Inhomogeneous regions in the laser-irradiated side of the CR-39 demonstrated a variable etching rate on only the front side of the CR-39 detector. New equations are also presented for the average bulk etching rate for these inhomogeneous regions (front side). The mean bulk and track etching rates and the mean track dimensions increased in a fluence range of 0–37.03 mJ/cm{sup 2} because of photodegradation and the scission of chemical bonds, which are the predominant processes in this range. When the fluence was increased from 37.03 to 123.45 mJ/cm{sup 2}, the bulk and track etching rates and the track dimensions slowly decreased because of the formation of cross-linked structures on the CR-39 surface. The behavior of the bulk and track etching rates and the track dimensions appears to be proportional to the dose absorbed on the detector surface. It was observed that as the etching time was increased, the bulk and track etching rates and the track dimensions of the laser-irradiated samples decreased because of the shallow penetration depth of the 193 nm laser and the reduction in the oxygen penetration depth.

  9. Investigation on etch characteristics of nanometer-sized magnetic tunnel junction stacks using a HBr/Ar plasma.

    Science.gov (United States)

    Kim, Eun Ho; Xiao, Yu Bin; Kong, Seon Mi; Chung, Chee Won

    2011-07-01

    The etch characteristics of CoFeB magnetic films and magnetic-tunnel-junction (MTJ) stacks masked with Ti films were investigated using an inductively coupled plasma reactive ion etching in a HBr/Ar gas mix. The etch rate, etch selectivity, and etch profile of the CoFeB films were obtained as a function of the HBr concentration. As the HBr gas was added to Ar, the etch rate of the CoFeB films, and the etch selectivity to the Ti hard mask, gradually decreased, but the etch profile of the CoFeB films was improved. The effects of the HBr concentration and etch parameters on the etch profile of the MTJ stacks with a nanometer-sized 70 x 100 nm2 pattern were explored. At 10% HBr concentration, low ICP RF power, and low DC-bias voltage, better etch profiles of the MTJ stacks were obtained without redeposition. It was confirmed that the protective layer containing hydrogen, and the surface bombardment of the Ar ions, played a key role in obtaining a steep sidewall angle in the etch profile. Fine-pattern transfer of the MTJ stacks with a high degree of anisotropy was achieved using a HBr/Ar gas chemistry.

  10. Light coupling and light trapping in alkaline etched multicrystalline silicon wafers for solar cells

    NARCIS (Netherlands)

    Hylton, J.D.

    2006-01-01

    The reflection reducing and light trapping properties of alkaline etched multicrystalline silicon wafers are investigated experimentally. Following an overview of various chemical texturisation methods and their effect upon the surface morphology, a high concentration saw-damage etch and a low

  11. Study on inductively coupled plasma etching induced damage of InSb

    Science.gov (United States)

    Wang, Liwen; Si, Junjie; Zhang, Guodong; Cheng, Caijing; Geng, Dongfeng

    2014-11-01

    InSb is an important Ⅲ-Ⅴnarrow gap compound semiconductor material. It is widely used in optoelectronic devices manufacture especially mid-wave infrared detectors. With the application of ICP etching in large-scale InSb IRFPA detectors fabrication process, the influence of ICP etching induced damage on InSb IRFPA devices has been paid more attention. Surface states which reflect the characteristics of semiconductor surface play an important role in the study on etching damage of semiconductor materials. In this paper, the surface state density on three InSb samples: one sample without etching, one sample etched by ICP and another sample wet etched by lactic acid/nitric acid etchant after ICP etching, is tested and calculated by quasi-static C-V method. The characterization and removal of ICP etching induced damage are investigated. Furthermore, the method of testing and calculating the distribution of surface state density has been presented detailedly in this paper. This work plays a significant role in the development of large-scale InSb IRFPA detectors.

  12. Cryo-Etched Black Silicon for Use as Optical Black

    Science.gov (United States)

    Yee, Karl Y.; White, Victor E.; Mouroulis, Pantazis; Eastwood, Michael L.

    2011-01-01

    Stray light reflected from the surface of imaging spectrometer components in particular, the spectrometer slit degrade the image quality. A technique has been developed for rapid, uniform, and cost-effective black silicon formation based on inductively coupled plasma (ICP) etching at cryogenic temperatures. Recent measurements show less than 1-percent total reflectance from 350 2,500 nm of doped black silicon formed in this way, making it an excellent option for texturing of component surfaces for reduction of stray light. Oxygen combines with SF6 + Si etch byproducts to form a passivation layer atop the Si when the etch is performed at cryogenic temperatures. Excess flow of oxygen results in micromasking and the formation of black silicon. The process is repeatable and reliable, and provides control over etch depth and sidewall profile. Density of the needles can be controlled to some extent. Regions to be textured can be patterned lithographically. Adhesion is not an issue as the nanotips are part of the underlying substrate. This is in contrast to surface growth/deposition techniques such as carbon nanotubes (CNTs). The black Si surface is compatible with wet processing, including processing with solvents, the textured surface is completely inorganic, and it does not outgas. In radiometry applications, optical absorbers are often constructed using gold black or CNTs. This black silicon technology is an improvement for these types of applications.

  13. Inductively coupled plasma etching of GaAs in Cl2/Ar, Cl2/Ar/O2 chemistries with photoresist mask

    Science.gov (United States)

    Liu, Kai; Ren, Xiao-min; Huang, Yong-qing; Cai, Shi-wei; Duan, Xiao-feng; Wang, Qi; Kang, Chao; Li, Jun-shuai; Chen, Qing-tao; Fei, Jia-rui

    2015-11-01

    In this paper, we proposed our recent works on inductively coupled plasma (ICP) etching of GaAs in Cl2/Ar and Cl2/Ar/O2 chemistry for pattern structure transferring and analyzed their etching mechanism. It is proposed that the etching rate reduction due to introduction of extra Cl2 and additional O2 in the plasma chemistry is resulted from their influences on all ICP etching process aspects. Moreover, with results presented here, it shows that by introducing O2 into plasma chemistry, the etched GaAs surface roughness will be optimized and the etching ratio of photoresist to GaAs will be tuned.

  14. Inactivation of lipoprotein lipase occurs on the surface of THP-1 macrophages where oligomers of angiopoietin-like protein 4 are formed

    International Nuclear Information System (INIS)

    Makoveichuk, Elena; Sukonina, Valentina; Kroupa, Olessia; Thulin, Petra; Ehrenborg, Ewa; Olivecrona, Thomas; Olivecrona, Gunilla

    2012-01-01

    Highlights: ► Lipoprotein lipase (LPL) activity is controlled by ANGPTL4 in THP-1 macrophages. ► Both LPL and ANGPTL4 bind to THP-1 macrophages in a heparin-releasable fashion. ► Only monomers of ANGPTL4 are present within THP-1 macrophages. ► Covalent oligomers of ANGPTL4 appear on cell surface and in medium. ► Inactivation of LPL coincide with ANGPTL4 oligomer formation on cell surfaces. -- Abstract: Lipoprotein lipase (LPL) hydrolyzes triglycerides in plasma lipoproteins causing release of fatty acids for metabolic purposes in muscles and adipose tissue. LPL in macrophages in the artery wall may, however, promote foam cell formation and atherosclerosis. Angiopoietin-like protein (ANGPTL) 4 inactivates LPL and ANGPTL4 expression is controlled by peroxisome proliferator-activated receptors (PPAR). The mechanisms for inactivation of LPL by ANGPTL4 was studied in THP-1 macrophages where active LPL is associated with cell surfaces in a heparin-releasable form, while LPL in the culture medium is mostly inactive. The PPARδ agonist GW501516 had no effect on LPL mRNA, but increased ANGPTL4 mRNA and caused a marked reduction of the heparin-releasable LPL activity concomitantly with accumulation of inactive, monomeric LPL in the medium. Intracellular ANGPTL4 was monomeric, while dimers and tetramers of ANGPTL4 were present in the heparin-releasable fraction and medium. GW501516 caused an increase in the amount of ANGPTL4 oligomers on the cell surface that paralleled the decrease in LPL activity. Actinomycin D blocked the effects of GW501516 on ANGPTL4 oligomer formation and prevented the inactivation of LPL. Antibodies against ANGPTL4 interfered with the inactivation of LPL. We conclude that inactivation of LPL in THP-1 macrophages primarily occurs on the cell surface where oligomers of ANGPTL4 are formed.

  15. Inactivation of lipoprotein lipase occurs on the surface of THP-1 macrophages where oligomers of angiopoietin-like protein 4 are formed

    Energy Technology Data Exchange (ETDEWEB)

    Makoveichuk, Elena; Sukonina, Valentina; Kroupa, Olessia [Department of Medical Biosciences, Physiological Chemistry Umea University, SE-901 87 Umea (Sweden); Thulin, Petra; Ehrenborg, Ewa [Atherosclerosis Research Unit, Department of Medicine, Karolinska Institutet, SE-171 76 Stockholm (Sweden); Olivecrona, Thomas [Department of Medical Biosciences, Physiological Chemistry Umea University, SE-901 87 Umea (Sweden); Olivecrona, Gunilla, E-mail: Gunilla.Olivecrona@medbio.umu.se [Department of Medical Biosciences, Physiological Chemistry Umea University, SE-901 87 Umea (Sweden)

    2012-08-24

    Highlights: Black-Right-Pointing-Pointer Lipoprotein lipase (LPL) activity is controlled by ANGPTL4 in THP-1 macrophages. Black-Right-Pointing-Pointer Both LPL and ANGPTL4 bind to THP-1 macrophages in a heparin-releasable fashion. Black-Right-Pointing-Pointer Only monomers of ANGPTL4 are present within THP-1 macrophages. Black-Right-Pointing-Pointer Covalent oligomers of ANGPTL4 appear on cell surface and in medium. Black-Right-Pointing-Pointer Inactivation of LPL coincide with ANGPTL4 oligomer formation on cell surfaces. -- Abstract: Lipoprotein lipase (LPL) hydrolyzes triglycerides in plasma lipoproteins causing release of fatty acids for metabolic purposes in muscles and adipose tissue. LPL in macrophages in the artery wall may, however, promote foam cell formation and atherosclerosis. Angiopoietin-like protein (ANGPTL) 4 inactivates LPL and ANGPTL4 expression is controlled by peroxisome proliferator-activated receptors (PPAR). The mechanisms for inactivation of LPL by ANGPTL4 was studied in THP-1 macrophages where active LPL is associated with cell surfaces in a heparin-releasable form, while LPL in the culture medium is mostly inactive. The PPAR{delta} agonist GW501516 had no effect on LPL mRNA, but increased ANGPTL4 mRNA and caused a marked reduction of the heparin-releasable LPL activity concomitantly with accumulation of inactive, monomeric LPL in the medium. Intracellular ANGPTL4 was monomeric, while dimers and tetramers of ANGPTL4 were present in the heparin-releasable fraction and medium. GW501516 caused an increase in the amount of ANGPTL4 oligomers on the cell surface that paralleled the decrease in LPL activity. Actinomycin D blocked the effects of GW501516 on ANGPTL4 oligomer formation and prevented the inactivation of LPL. Antibodies against ANGPTL4 interfered with the inactivation of LPL. We conclude that inactivation of LPL in THP-1 macrophages primarily occurs on the cell surface where oligomers of ANGPTL4 are formed.

  16. Effect of active pretreatment of self-etching primers on the ultramorphology of intact primary and permanent tooth enamel.

    Science.gov (United States)

    Cehreli, Sevi Burcak; Eminkahyagil, Neslihan

    2006-01-01

    The objective of this study was to evaluate the ultramorphological changes after agitated and nonagitated application of self-etching primer systems on unground primary and permanent enamel. Five self-etching primer systems were used: (1) Clearfil SE Bond; (2) Clearfil Protect Bond; (3) Adper Prompt; (4) Xeno III; and (5) nonrinse conditioner (NRC). Noncarious human primary and permanent incisors were collected and stored frozen until used. Intact labial surfaces were divided into 2 halves, applying the self-etching primers with (active application) and without (inactive agitation) using a microbrush within the times recommended by the manufacturers. Treated surfaces were further processed for ultramorphological evaluation under scanning electron microscope (SEM). All tested self-etching systems produced weaker etch patterns and less dissolution of enamel surface compared with acid-etched samples in both primary and permanent teeth. Except for NRC and Adper Prompt, agitation of the surface did not increase the etching efficacy. Clearfil SE Bond and Clearfil Protect Bond resulted in similar morphological features following application in either mode. While agitation of self-etching primers may improve etching efficacy, this effect appears to be dependent on the material used. Phosphoric acid produces well-defined etching patterns on intact primary and permanent enamel.

  17. Morphogenesis of respiratory syncytial virus in human primary nasal ciliated epithelial cells occurs at surface membrane microdomains that are distinct from cilia

    International Nuclear Information System (INIS)

    Jumat, Muhammad Raihan; Yan, Yan; Ravi, Laxmi Iyer; Wong, Puisan; Huong, Tra Nguyen; Li, Chunwei; Tan, Boon Huan; Wang, De Yun; Sugrue, Richard J.

    2015-01-01

    The distribution of cilia and the respiratory syncytial virus (RSV) nucleocapsid (N) protein, fusion (F) protein, attachment (G) protein, and M2-1 protein in human ciliated nasal epithelial cells was examined at between 1 and 5 days post-infection (dpi). All virus structural proteins were localized at cell surface projections that were distinct from cilia. The F protein was also trafficked into the cilia, and while its presence increased as the infection proceeded, the N protein was not detected in the cilia at any time of infection. The presence of the F protein in the cilia correlated with cellular changes in the cilia and reduced cilia function. At 5 dpi extensive cilia loss and further reduced cilia function was noted. These data suggested that although RSV morphogenesis occurs at non-cilia locations on ciliated nasal epithelial cells, RSV infection induces changes in the cilia body that leads to extensive cilia loss. - Highlights: • Respiratory syncytial virus (RSV) infects nasal ciliated epithelial cells. • Virus morphogenesis occurs within filamentous projections distinct from cilia. • The RSV N protein was not detected in the cilia at any time during infection. • Trafficking of the F protein into the cilia occurred early in infection. • Presence of the F protein in cilia correlated with impaired cilia function

  18. Morphogenesis of respiratory syncytial virus in human primary nasal ciliated epithelial cells occurs at surface membrane microdomains that are distinct from cilia

    Energy Technology Data Exchange (ETDEWEB)

    Jumat, Muhammad Raihan [School of Biological Sciences, Nanyang Technological University, 60 Nanyang Drive, Singapore 637551 (Singapore); Yan, Yan [Department of Otolaryngology, Yong Loo Lin School of Medicine, National University Health System, National University of Singapore, Singapore 119228 (Singapore); Ravi, Laxmi Iyer [School of Biological Sciences, Nanyang Technological University, 60 Nanyang Drive, Singapore 637551 (Singapore); Wong, Puisan [Detection and Diagnostics Laboratory, DSO National Laboratories, 27 Medical Drive, Singapore 117510 (Singapore); Huong, Tra Nguyen [School of Biological Sciences, Nanyang Technological University, 60 Nanyang Drive, Singapore 637551 (Singapore); Li, Chunwei [Department of Otolaryngology, Yong Loo Lin School of Medicine, National University Health System, National University of Singapore, Singapore 119228 (Singapore); Tan, Boon Huan [Detection and Diagnostics Laboratory, DSO National Laboratories, 27 Medical Drive, Singapore 117510 (Singapore); Wang, De Yun [Department of Otolaryngology, Yong Loo Lin School of Medicine, National University Health System, National University of Singapore, Singapore 119228 (Singapore); Sugrue, Richard J., E-mail: rjsugrue@ntu.edu.sg [School of Biological Sciences, Nanyang Technological University, 60 Nanyang Drive, Singapore 637551 (Singapore)

    2015-10-15

    The distribution of cilia and the respiratory syncytial virus (RSV) nucleocapsid (N) protein, fusion (F) protein, attachment (G) protein, and M2-1 protein in human ciliated nasal epithelial cells was examined at between 1 and 5 days post-infection (dpi). All virus structural proteins were localized at cell surface projections that were distinct from cilia. The F protein was also trafficked into the cilia, and while its presence increased as the infection proceeded, the N protein was not detected in the cilia at any time of infection. The presence of the F protein in the cilia correlated with cellular changes in the cilia and reduced cilia function. At 5 dpi extensive cilia loss and further reduced cilia function was noted. These data suggested that although RSV morphogenesis occurs at non-cilia locations on ciliated nasal epithelial cells, RSV infection induces changes in the cilia body that leads to extensive cilia loss. - Highlights: • Respiratory syncytial virus (RSV) infects nasal ciliated epithelial cells. • Virus morphogenesis occurs within filamentous projections distinct from cilia. • The RSV N protein was not detected in the cilia at any time during infection. • Trafficking of the F protein into the cilia occurred early in infection. • Presence of the F protein in cilia correlated with impaired cilia function.

  19. Texture-Etched SnO2 Glasses Applied to Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Bing-Rui Wu

    2014-01-01

    Full Text Available Transparent electrodes of tin dioxide (SnO2 on glasses were further wet-etched in the diluted HCl:Cr solution to obtain larger surface roughness and better light-scattering characteristic for thin-film solar cell applications. The process parameters in terms of HCl/Cr mixture ratio, etching temperature, and etching time have been investigated. After etching process, the surface roughness, transmission haze, and sheet resistance of SnO2 glasses were measured. It was found that the etching rate was increased with the additions in etchant concentration of Cr and etching temperature. The optimum texture-etching parameters were 0.15 wt.% Cr in 49% HCl, temperature of 90°C, and time of 30 sec. Moreover, silicon thin-film solar cells with the p-i-n structure were fabricated on the textured SnO2 glasses using hot-wire chemical vapor deposition. By optimizing the texture-etching process, the cell efficiency was increased from 4.04% to 4.39%, resulting from the increment of short-circuit current density from 14.14 to 15.58 mA/cm2. This improvement in cell performances can be ascribed to the light-scattering effect induced by surface texturization of SnO2.

  20. Tin etching from metallic and oxidized scandium thin films

    NARCIS (Netherlands)

    Pachecka, Malgorzata; Lee, Christopher James; Sturm, J.M.; Bijkerk, Frederik

    The role of oxide on Sn adhesion to Sc surfaces was studied with in-situ ellipsometry, X-ray photoelectron spectroscopy and secondary electron microscopy. Sn etching with hydrogen radicals was performed on metallic Sc, metallic Sc with a native oxide, and a fully oxidized Sc layer. The results show

  1. Electrochemistry in anisotropic etching of silicon in alkaline solutions

    NARCIS (Netherlands)

    Nguyen, Q.D.

    2007-01-01

    Etching is the process of using an acidic or caustic chemical to cut into unprotected areas of a particular material. Initially used in the 15th century for decorating plate armor and sword blades, the metal surface (typically steel or copper) was first covered with a wax-like material. Part of the

  2. Plasma etching of benzocyclobutene in CF4/O2 and SF6/O2 plasmas

    International Nuclear Information System (INIS)

    Kim, G.S.; Steinbruechel, C.

    2006-01-01

    Results for the reactive ion etching and patterning of benzocyclobutene (BCB) in CF 4 /O 2 and SF 6 /O 2 plasmas in a parallel-plate reactor with Langmuir probe and optical emission diagnostics are reported. The behavior of the O atom concentration [O] is similar in both plasmas, showing a strong maximum at a concentration of about 70% O 2 . The F atom concentration [F] has a maximum at 30% O 2 in CF 4 /O 2 , but the etch rate has a maximum at 70% O 2 . In SF 6 /O 2 , by contrast, [F] and the etch rate increase continuously as the SF 6 content is increased, and the highest etch rate is obtained with pure SF 6 . Also, BCB etched in pure SF 6 gives a very smooth surface. Patterning is performed using two different masks: a conventional hard mask with Si oxide as the top layer and a different type of mask with BCB itself as the top layer. The anisotropy of the etching is evaluated in terms of the plasma conditions and type of masking. The aspect ratio dependence of the etch rate is investigated up to an aspect ratio of 2.5. The results are discussed in terms of possible etch mechanisms and their differences between SF 6 /O 2 and C 4 /O 2 plasmas. A simple model is used to show how the latter mask reduces the dependence of the etch rate on the aspect ratio

  3. Etching mechanism of niobium in coaxial Ar/Cl2 radio frequency plasma

    Energy Technology Data Exchange (ETDEWEB)

    Upadhyay, Janardan [Old Dominion Univ., Norfolk, VA (United States); Im, Do [Old Dominion Univ., Norfolk, VA (United States); Popovic, Svetozar [Old Dominion Univ., Norfolk, VA (United States); Valente-Feliciano, Anne -Marie [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Phillips, H. Larry [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Vuskovic, Leposova [Old Dominion Univ., Norfolk, VA (United States)

    2015-03-18

    The understanding of the Ar/Cl2 plasma etching mechanism is crucial for the desired modification of inner surface of the three dimensional niobium (Nb) superconductive radio frequency cavities. Uniform mass removal in cylindrical shaped structures is a challenging task because the etch rate varies along the direction of gas flow. The study is performed in the asymmetric coaxial radio-frequency (rf) discharge with two identical Nb rings acting as a part of the outer electrode. The dependence of etch rate uniformity on pressure, rf power, dc bias, Cl2 concentration, diameter of the inner electrode, temperature of the outer cylinder, and position of the samples in the structure is determined. Furthermore, to understand the plasma etching mechanisms, we have studied several factors that have important influence on the etch rate and uniformity, which include the plasma sheath potential, Nb surface temperature, and the gas flow rate.

  4. Nanostructured porous silicon by laser assisted electrochemical etching

    Science.gov (United States)

    Li, J.; Lu, C.; Hu, X. K.; Yang, Xiujuan; Loboda, A. V.; Lipson, R. H.

    2009-08-01

    Nanostructured porous silicon (pSi) was fabricated by combining electrochemical etching with 355 nm laser processing. pSi prepared in this way proves to be an excellent substrate for desorption/ionization on silicon (DIOS) mass spectrometry (MS). Surfaces prepared by electrochemical etching and laser irradiation exhibit strong quantum confinement as evidenced by the observation of a red shift in the Si Raman band at ~520-500 cm-1. The height of the nanostructured columns produced by electrochemical etching and laser processing is on the order of microns compared with tens of nanometers obtained without laser irradiation. The threshold for laser desorption and ionization of 12 mJ/cm2 using the pSi substrates prepared in this work is lower than that obtained for conventional matrix assisted laser desorption ionization (MALDI)-MS using a standard matrix compound such as [alpha]-cyano-4-hydroxycinnamic acid (CHCA; 30 mJ/cm2). Furthermore, the substrates prepared by etching and laser irradiation appear to resist laser damage better than those prepared by etching alone. These results enhance the capability of pSi for the detection of small molecular weight analytes by DIOS-MS.

  5. Adiabatic tapered optical fiber fabrication in two step etching

    Science.gov (United States)

    Chenari, Z.; Latifi, H.; Ghamari, S.; Hashemi, R. S.; Doroodmand, F.

    2016-01-01

    A two-step etching method using HF acid and Buffered HF is proposed to fabricate adiabatic biconical optical fiber tapers. Due to the fact that the etching rate in second step is almost 3 times slower than the previous droplet etching method, terminating the fabrication process is controllable enough to achieve a desirable fiber diameter. By monitoring transmitted spectrum, final diameter and adiabaticity of tapers are deduced. Tapers with losses about 0.3 dB in air and 4.2 dB in water are produced. The biconical fiber taper fabricated using this method is used to excite whispering gallery modes (WGMs) on a microsphere surface in an aquatic environment. So that they are suitable to be used in applications like WGM biosensors.

  6. Extreme wettability of nanostructured glass fabricated by non-lithographic, anisotropic etching

    Science.gov (United States)

    Yu, Eusun; Kim, Seul-Cham; Lee, Heon Ju; Oh, Kyu Hwan; Moon, Myoung-Woon

    2015-01-01

    Functional glass surfaces with the properties of superhydrophobicity/or superhydrohydrophilicity, anti-condensation or low reflectance require nano- or micro-scale roughness, which is difficult to fabricate directly on glass surfaces. Here, we report a novel non-lithographic method for the fabrication of nanostructures on glass; this method introduces a sacrificial SiO2 layer for anisotropic plasma etching. The first step was to form nanopillars on SiO2 layer-coated glass by using preferential CF4 plasma etching. With continuous plasma etching, the SiO2 pillars become etch-resistant masks on the glass; thus, the glass regions covered by the SiO2 pillars are etched slowly, and the regions with no SiO2 pillars are etched rapidly, resulting in nanopatterned glass. The glass surface that is etched with CF4 plasma becomes superhydrophilic because of its high surface energy, as well as its nano-scale roughness and high aspect ratio. Upon applying a subsequent hydrophobic coating to the nanostructured glass, a superhydrophobic surface was achieved. The light transmission of the glass was relatively unaffected by the nanostructures, whereas the reflectance was significantly reduced by the increase in nanopattern roughness on the glass. PMID:25791414

  7. Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMS

    Science.gov (United States)

    Rao, A. V. Narasimha; Swarnalatha, V.; Pal, P.

    2017-12-01

    Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structures using silicon bulk micromachining. The use of Si{110} in MEMS is inevitable when a microstructure with vertical sidewall is to be fabricated using wet anisotropic etching. In most commonly employed etchants (i.e. TMAH and KOH), potassium hydroxide (KOH) exhibits higher etch rate and provides improved anisotropy between Si{111} and Si{110} planes. In the manufacturing company, high etch rate is demanded to increase the productivity that eventually reduces the cost of end product. In order to modify the etching characteristics of KOH for the micromachining of Si{110}, we have investigated the effect of hydroxylamine (NH2OH) in 20 wt% KOH solution. The concentration of NH2OH is varied from 0 to 20% and the etching is carried out at 75 °C. The etching characteristics which are studied in this work includes the etch rates of Si{110} and silicon dioxide, etched surface morphology, and undercutting at convex corners. The etch rate of Si{110} in 20 wt% KOH + 15% NH2OH solution is measured to be four times more than that of pure 20 wt% KOH. Moreover, the addition of NH2OH increases the undercutting at convex corners and enhances the etch selectivity between Si and SiO2.

  8. Fabrication of ultra-high aspect ratio (>160:1) silicon nanostructures by using Au metal assisted chemical etching

    Science.gov (United States)

    Li, Hailiang; Ye, Tianchun; Shi, Lina; Xie, Changqing

    2017-12-01

    We present a facile and effective approach for fabricating high aspect ratio, dense and vertical silicon nanopillar arrays, using a combination of metal etching following electron-beam lithography and Au metal assisted chemical etching (MacEtch). Ti/Au nanostructures used as catalysts in MacEtch are formed by single layer resist-based electron-beam exposure followed by ion beam etching. The effects of MacEtch process parameters, including half period, etching time, the concentrations of H2O2 and HF, etching temperature and drying method are systematically investigated. Especially, we demonstrate an enhancement of etching quality by employing cold MacEtch process, and an enhancement in preventing the collapse of high aspect ratio nanostructures by employing low surface tension rinse liquid and natural evaporation in the drying stage. Using an optimized MacEtch process, vertical silicon nanopillar arrays with a period of 250 nm and aspect ratio up to 160:1 are realized. Our results should be instructive for exploring the achievable aspect ratio limit in silicon nanostructures and may find potential applications in photovoltaic devices, thermoelectric devices and x-ray diffractive optics.

  9. Effect of thermocycling on the durability of etch-and-rinse and self-etch adhesives on dentin.

    Science.gov (United States)

    Sangwichit, Ketkamon; Kingkaew, Ruksaphon; Pongprueksa, Pong; Senawongse, Pisol

    2016-01-01

    The objective was to compare bond strengths of adhesives with/without thermocycling and to analyze the micromorphology of resindentin interfaces. Flat dentin surfaces were prepared and divided into eight groups to bond with four etch-and-rinse adhesives (Optibond FL, Adper Scotchbond Multi-Purpose, Optibond Solo Plus, and Single Bond 2) and four self-etch adhesives (Clearfil SE Bond, Adper SE Plus, Clearfil S(3) Bond and Adper Easy Bond). Specimens were further divided into two subgroups subjected for with/without thermocycling and then subjected to both micro-tensile test and resin-dentin interface evaluation. The results revealed that there were significant differences in bond strength between the groups with and without thermocycling for all etch-and-rinse groups and for the Adper Easy Bond self-etch group (p<0.01). Clearfil SE Bond demonstrated highly durable bond strengths. Furthermore, more silver ion uptake was observed at the resin-dentin interfaces for all etch-and-rinse adhesives and Adper SE Plus and Adper Easy Bond after thermocycling.

  10. Characterization of deep wet etching of fused silica glass for single cell and optical sensor deposition

    International Nuclear Information System (INIS)

    Zhu, Haixin; Holl, Mark; Ray, Tathagata; Bhushan, Shivani; Meldrum, Deirdre R

    2009-01-01

    The development of a high-throughput single-cell metabolic rate monitoring system relies on the use of transparent substrate material for a single cell-trapping platform. The high optical transparency, high chemical resistance, improved surface quality and compatibility with the silicon micromachining process of fused silica make it very attractive and desirable for this application. In this paper, we report the results from the development and characterization of a hydrofluoric acid (HF) based deep wet-etch process on fused silica. The pin holes and notching defects of various single-coated masking layers during the etching are characterized and the most suitable masking materials are identified for different etch depths. The dependence of the average etch rate and surface roughness on the etch depth, impurity concentration and HF composition are also examined. The resulting undercut from the deep HF etch using various masking materials is also investigated. The developed and characterized process techniques have been successfully implemented in the fabrication of micro-well arrays for single cell trapping and sensor deposition. Up to 60 µm deep micro-wells have been etched in a fused silica substrate with over 90% process yield and repeatability. To our knowledge, such etch depth has never been achieved in a fused silica substrate by using a non-diluted HF etchant and a single-coated masking layer at room temperature

  11. Resin replica in enamel deproteinization and its effect on acid etching.

    Science.gov (United States)

    Espinosa, Roberto; Valencia, Roberto; Uribe, Mario; Ceja, Israel; Cruz, J; Saadia, Marc

    2010-01-01

    The goal of this in vitro study was to identify the topographical features of deproteinized (NaOCl) and etched with phosphoric acid (H3PO4) enamel surface, compared to phosphoric acid surface alone with a Resin Replica model. Ten extracted lower first and second permanent molars were polished with pumice and water, and then divided into 3 equal buccal sections having similar physical and chemical properties. The enamel surfaces of each group were subjected to the following treatments: Group A: Acid Etching with H3PO4 37% for 15 seconds. Group B: Sodium Hypochlorite (NaOCl) 5.25% for 60 seconds followed by Acid Etching with H3PO4 37% for 15 seconds. Group C; No treatment (control). All the samples were treated as follow: Adhesive and resin were applied to all groups after A, B and C treatment were performed; Then enamel/dentin decalcification and deproteinization and topographic SEM Resin Replica assessment were used to identify resin tags enamel surface quality penetration. Showed that group B reached an area of 7.52 mm of the total surface, with a 5.68 mm2 (73%) resin tag penetration equivalent type I and II etching pattern, 1.71 mm2 (26%) equivalent to type III etching pattern and 0.07 mm2 (1%) unaffected surface. Followed by group A with 7.48 mm2 of the total surface, with a 3.47 mm2 (46 %)resin tag penetration equivalent to type I and II etching pattern, 3.30 mm2 (45%)equivalent to type III etching pattern and 0.71 mm2, and (9%) unaffected surface. Group C did not show any resin tag penetration. A significant statistical diference (P enamel is deproteinizated with 5.25% NaOCl for 1 minute prior H3PO4, the surface and topographical features of the replica resin penetration surface increases significantly with type I-II etching pattern.

  12. Modified TMAH based etchant for improved etching characteristics on Si{1 0 0} wafer

    Science.gov (United States)

    Swarnalatha, V.; Narasimha Rao, A. V.; Ashok, A.; Singh, S. S.; Pal, P.

    2017-08-01

    Wet bulk micromachining is a popular technique for the fabrication of microstructures in research labs as well as in industry. However, increasing the throughput still remains an active area of research, and can be done by increasing the etching rate. Moreover, the release time of a freestanding structure can be reduced if the undercutting rate at convex corners can be improved. In this paper, we investigate a non-conventional etchant in the form of NH2OH added in 5 wt% tetramethylammonium hydroxide (TMAH) to determine its etching characteristics. Our analysis is focused on a Si{1 0 0} wafer as this is the most widely used in the fabrication of planer devices (e.g. complementary metal oxide semiconductors) and microelectromechanical systems (e.g. inertial sensors). We perform a systematic and parametric analysis with concentrations of NH2OH varying from 5% to 20% in step of 5%, all in 5 wt% TMAH, to obtain the optimum concentration for achieving improved etching characteristics including higher etch rate, undercutting at convex corners, and smooth etched surface morphology. Average surface roughness (R a), etch depth, and undercutting length are measured using a 3D scanning laser microscope. Surface morphology of the etched Si{1 0 0} surface is examined using a scanning electron microscope. Our investigation has revealed a two-fold increment in the etch rate of a {1 0 0} surface with the addition of NH2OH in the TMAH solution. Additionally, the incorporation of NH2OH significantly improves the etched surface morphology and the undercutting at convex corners, which is highly desirable for the quick release of microstructures from the substrate. The results presented in this paper are extremely useful for engineering applications and will open a new direction of research for scientists in both academic and industrial laboratories.

  13. SEM investigation of composite restoration adaptation to enamel after use of total etch and self etch adhesive system

    Directory of Open Access Journals (Sweden)

    Dačić Stefan

    2009-01-01

    Full Text Available Introduction Quality and durability of enamel/composite interface essentially depend on an adhesive restorative system. Objective The aim of this study was to evaluate the quality of marginal adaptation of composite adhesive systems to enamel by scanning electron microscopy (SEM, and to analyze the morphology of the enamel surface along margins of composite restorations, following exposure to cariogenic solution. Methods The study material included 56 extracted human third molars. Class V cavities were prepared with margins at enamel. Cavities were restored with Single Bond/Z250 and Single Bond/Filtek flow, using the total etch adhesive system, and Prompt-L-Pop/Z250 and Prompt-L-Pop/Filtek flow, using the self etch adhesive system. After the restorative procedure, the restorations were submitted to demineralization during 7 and 28 days. Samples were stored in a cariogenic solution (lactic acid, pH 4.5; 0.1 M at 37°C or in deionized water (the control group. The margins of restorations and perimarginal enamel were examined by scanning electron microscope (SEM. The gap formations around restoration were measured on cervical, occlusal and approximate margins. Results The usage of the total etch adhesive system showed statistically significant lower marginal gap width around composite restoration, compared with the self etch system (p<0.01. The SEM examination also showed perimarginal enamel zones presenting several signs of demineralization and erosion (alteration of rods, porosities after acting of a cariogenic solution, in both adhesive methods. Less alteration was found on the enamel surfaces not included in the perimarginal zone. Conclusion Treating the cavity with 35% phosphoric acid in the total etch system significantly improved the adaptation of the composite resins to enamel, compared with the self etch treatment. Stronger demineralization of the perimarginal enamel in a cariogenic solution was observed around all restorations in both

  14. Etching patterns on the micro‐ and nanoscale

    DEFF Research Database (Denmark)

    Michael-Lindhard, Jonas; Herstrøm, Berit; Stöhr, Frederik

    2014-01-01

    Dry etching is widely used for realizing micro‐ and nanostructured devices in various materials. Here, theavailable dry etching techniques and their capabilities at DTU‐Danchip are presented. What sets the dry etching apart from the traditional wet etching in which a chemical agent dissolved...... and polymer injection molding. High precision patterns of, for instance microfluidic devices, are etched intosilicon which is then electroplated with nickel that will serve as a stamp in the polymer injection molding tool where thousands of devices may be replicated. In addition to silicon and its derived...

  15. Comparative Evaluation of the Etching Pattern of Er,Cr:YSGG & Acid Etching on Extracted Human Teeth-An ESEM Analysis

    Science.gov (United States)

    Mazumdar, Dibyendu; Ranjan, Shashi; Krishna, Naveen Kumar; Kole, Ravindra; Singh, Priyankar; Lakiang, Deirimika; Jayam, Chiranjeevi

    2016-01-01

    Introduction Etching of enamel and dentin surfaces increases the surface area of the substrate for better bonding of the tooth colored restorative materials. Acid etching is the most commonly used method. Recently, hard tissue lasers have been used for this purpose. Aim The aim of the present study was to evaluate and compare the etching pattern of Er,Cr:YSGG and conventional etching on extracted human enamel and dentin specimens. Materials and Methods Total 40 extracted non-diseased teeth were selected, 20 anterior and 20 posterior teeth each for enamel and dentin specimens respectively. The sectioned samples were polished by 400 grit Silicon Carbide (SiC) paper to a thickness of 1.0 ± 0.5 mm. The enamel and dentin specimens were grouped as: GrE1 & GrD1 as control specimens, GrE2 & GrD2 were acid etched and GrE3 & GrD3 were lased. Acid etching was done using Conditioner 36 (37 % phosphoric acid) according to manufacturer instructions. Laser etching was done using Er,Cr:YSGG (Erbium, Chromium : Ytrium Scandium Gallium Garnet) at power settings of 3W, air 70% and water 20%. After surface treatment with assigned agents the specimens were analyzed under ESEM (Environmental Scanning Electron Microscope) at X1000 and X5000 magnification. Results Chi Square and Student “t” statistical analysis was used to compare smear layer removal and etching patterns between GrE2-GrE3. GrD2 and GrD3 were compared for smear layer removal and diameter of dentinal tubule opening using the same statistical analysis. Chi-square test for removal of smear layer in any of the treated surfaces i.e., GrE2-E3 and GrD2-D3 did not differ significantly (p>0.05). While GrE2 showed predominantly type I etching pattern (Chi-square=2.78, 0.050.10) and GrE3 showed type III etching (Chi-square=4.50, p<0.05). The tubule diameters were measured using GSA (Gesellschaft fur Softwareentwicklung und Analytik, Germany) image analyzer and the ‘t’ value of student ‘t’ test was 18.10 which was a

  16. Effects of a power and photon energy of incident light on near-field etching properties

    Science.gov (United States)

    Yatsui, T.; Saito, H.; Nishioka, K.; Leuschel, B.; Soppera, O.; Nobusada, K.

    2017-12-01

    We developed a near-field etching technique for realizing an ultra-flat surfaces of various materials and structures. To elucidate the near-field etching properties, we have investigated the effects of power and the photon energy of the incident light. First, we established theoretically that an optical near-field with photon energy lower than the absorption edge of the molecules can induce molecular vibrations. We used nanodiamonds to study the power dependence of the near-field etching properties. From the topological changes of the nanodiamonds, we confirmed the linear-dependence of the etching volume with the incident power. Furthermore, we studied the photon energy dependence using TiO2 nanostriped structures, which revealed that a lower photon energy results in a lower etching rate.

  17. Hybrid mask for deep etching

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-08-10

    Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during semiconductor manufacturing for deep reactive etches. Such a manufacturing process may include depositing a first mask material on a substrate; depositing a second mask material on the first mask material; depositing a third mask material on the second mask material; patterning the third mask material with a pattern corresponding to one or more trenches for transfer to the substrate; transferring the pattern from the third mask material to the second mask material; transferring the pattern from the second mask material to the first mask material; and/or transferring the pattern from the first mask material to the substrate.

  18. Non-Lithographic Silicon Micromachining Using Inkjet and Chemical Etching

    Directory of Open Access Journals (Sweden)

    Sasha Hoshian

    2016-12-01

    Full Text Available We introduce a non-lithographical and vacuum-free method to pattern silicon. The method combines inkjet printing and metal assisted chemical etching (MaCE; we call this method “INKMAC”. A commercial silver ink is printed on top of a silicon surface to create the catalytic patterns for MaCE. The MaCE process leaves behind a set of silicon nanowires in the shape of the inkjet printed micrometer scale pattern. We further show how a potassium hydroxide (KOH wet etching process can be used to rapidly etch away the nanowires, producing fully opened cavities and channels in the shape of the original printed pattern. We show how the printed lines (width 50–100 µm can be etched into functional silicon microfluidic channels with different depths (10–40 µm with aspect ratios close to one. We also used individual droplets (minimum diameter 30 µm to produce cavities with a depth of 60 µm and an aspect ratio of two. Further, we discuss using the structured silicon substrate as a template for polymer replication to produce superhydrophobic surfaces.

  19. Survival of Dicor glass-ceramic dental restorations over 14 years: Part I. Survival of Dicor complete coverage restorations and effect of internal surface acid etching, tooth position, gender, and age.

    Science.gov (United States)

    Malament, K A; Socransky, S S

    1999-01-01

    There are no long-term data on Dicor glass-ceramic restoration survival in the human oral cavity and the effect that different technical and clinical variables have on survival. This prospective study examined the relationship of different clinical parameters on the survival of Dicor glass-ceramic restorations in the human oral cavity. A total of 417 subjects (from 17 to 91 years of age) participated. All subjects required single unit fixed prosthodontics in any area of the mouth and/or 3-unit fixed partial dentures or cantilevered anterior restorations. They were offered the option of a gold or conventional metal-ceramic restoration, or a Dicor restoration with potentially improved esthetic results, better wear characteristics, and diminished oral plaque accumulation. Overall survival of the restorations was determined and the effect of various clinical parameters evaluated with Kaplan-Meier survival curves. Log rank tests were used to determine statistically significant differences among parameters. For the 1444 units placed, 188 failures were recorded. Total time at risk for the units was 7319 years providing an estimated risk of 2.45% per year. Probabilities of survival of "typical" acid-etched Dicor and nonacid-etched Dicor restorations were 76% and 50%, respectively, at 14.1 years (P <.001). Probabilities of survival of typical acid-etched and nonacid-etched Dicor complete coverage restorations were virtually identical to those observed in the full data set. There was a 2.2 times greater risk of failure associated with the use of nonacid-etched Dicor complete coverage than acid-etched restorations (P <.01). Complete coverage restoration survival was highest in the incisor region and decreased to the molars in both arches. Second molars showed the highest failure rate. No complete coverage restorations failed on lateral incisors during the entire study. Probability of survival of a typical acid-etched Dicor complete coverage restoration in male subjects was 71

  20. Plasmoids for etching and deposition

    Science.gov (United States)

    Pothiraja, Ramasamy; Bibinov, Nikita; Awakowicz, Peter

    2014-11-01

    In this manuscript we show fascinating properties of plasmoids, which are known to be self-sustained plasma entities, and can exist without being in contact with any power supply. Plasmoids are produced in a filamentary discharge in a Ar/CH4 mixture with a high production rate of about 105 s-1. It is observed that plasmoids etch the solid amorphous hydrocarbon film with high efficiency. Energy density of the plasmoid, which is estimated on the basis of glowing area of plasmoids in the photographic image and sublimation enthalpy of the etched hydrocarbon film, amounts to about 90 J m-3. This value is much lower than the energy density of observed ball lightning (natural plasmoid). A very surprising property is an attraction between plasmoids, and the formation of plasmoid-groups. Because of this attractive force, carbon material, which is collected in plasmoids by etching of the hydrocarbon film or by propagation through a methane/argon gas mixture, is compressed into crystals.

  1. Quadrilateral Micro-Hole Array Machining on Invar Thin Film: Wet Etching and Electrochemical Fusion Machining.

    Science.gov (United States)

    Choi, Woong-Kirl; Kim, Seong-Hyun; Choi, Seung-Geon; Lee, Eun-Sang

    2018-01-19

    Ultra-precision products which contain a micro-hole array have recently shown remarkable demand growth in many fields, especially in the semiconductor and display industries. Photoresist etching and electrochemical machining are widely known as precision methods for machining micro-holes with no residual stress and lower surface roughness on the fabricated products. The Invar shadow masks used for organic light-emitting diodes (OLEDs) contain numerous micro-holes and are currently machined by a photoresist etching method. However, this method has several problems, such as uncontrollable hole machining accuracy, non-etched areas, and overcutting. To solve these problems, a machining method that combines photoresist etching and electrochemical machining can be applied. In this study, negative photoresist with a quadrilateral hole array pattern was dry coated onto 30-µm-thick Invar thin film, and then exposure and development were carried out. After that, photoresist single-side wet etching and a fusion method of wet etching-electrochemical machining were used to machine micro-holes on the Invar. The hole machining geometry, surface quality, and overcutting characteristics of the methods were studied. Wet etching and electrochemical fusion machining can improve the accuracy and surface quality. The overcutting phenomenon can also be controlled by the fusion machining. Experimental results show that the proposed method is promising for the fabrication of Invar film shadow masks.

  2. Using an energized oxygen micro-jet for improved graphene etching by focused electron beam

    International Nuclear Information System (INIS)

    Kim, Songkil; Henry, Mathias; Fedorov, Andrei G.

    2015-01-01

    We report on an improved Focused Electron Beam Induced Etching (FEBIE) process, which exploits heated oxygen delivery via a continuous supersonic micro-jet resulting in faster graphene patterning and better etch feature definition. Positioning a micro-jet in close proximity to a graphene surface with minimal jet spreading due to a continuous regime of gas flow at the exit of the 10 μm inner diameter capillary allows for focused exposure of the surface to reactive oxygen at high mass flux and impingement energy of a supersonic gas stream localized to a small etching area exposed to electron beam. These unique benefits of focused supersonic oxygen delivery to the surface enable a dramatic increase in the etch rate of graphene with no parasitic carbon “halo” deposition due to secondary electrons from backscattered electrons (BSE) in the area surrounding the etched regions. Increase of jet temperature via local nozzle heating provides means for enhancing kinetic energy of impinging oxygen molecules, which further speed up the etch, thus minimizing the beam exposure time and required electron dose, before parasitic carbon film deposition due to BSE mediated decomposition of adsorbed hydrocarbon contaminants has a measurable impact on quality of graphene etched features. Interplay of different physical mechanisms underlying an oxygen micro-jet assisted FEBIE process is discussed with support from experimental observations

  3. Using an energized oxygen micro-jet for improved graphene etching by focused electron beam

    Science.gov (United States)

    Kim, Songkil; Henry, Mathias; Fedorov, Andrei G.

    2015-12-01

    We report on an improved Focused Electron Beam Induced Etching (FEBIE) process, which exploits heated oxygen delivery via a continuous supersonic micro-jet resulting in faster graphene patterning and better etch feature definition. Positioning a micro-jet in close proximity to a graphene surface with minimal jet spreading due to a continuous regime of gas flow at the exit of the 10 μm inner diameter capillary allows for focused exposure of the surface to reactive oxygen at high mass flux and impingement energy of a supersonic gas stream localized to a small etching area exposed to electron beam. These unique benefits of focused supersonic oxygen delivery to the surface enable a dramatic increase in the etch rate of graphene with no parasitic carbon "halo" deposition due to secondary electrons from backscattered electrons (BSE) in the area surrounding the etched regions. Increase of jet temperature via local nozzle heating provides means for enhancing kinetic energy of impinging oxygen molecules, which further speed up the etch, thus minimizing the beam exposure time and required electron dose, before parasitic carbon film deposition due to BSE mediated decomposition of adsorbed hydrocarbon contaminants has a measurable impact on quality of graphene etched features. Interplay of different physical mechanisms underlying an oxygen micro-jet assisted FEBIE process is discussed with support from experimental observations.

  4. Influence of different acid etchings on the superficial characteristics of Ti sandblasted with Al2O3

    Directory of Open Access Journals (Sweden)

    Bruno Ramos Chrcanovic

    2013-01-01

    Full Text Available Some implant manufactures use Al2O3 instead TiO2 powder to sandblast the machined dental implant, because Al2O3 powder is commercially more easily available and is cheaper than TiO2 powder. However, Al2O3 powder usually leaves aluminum oxide contamination on the surface, which is potentially toxic. In this work, we subjected Ti discs previously sandblasted with Al2O3 powder to 5 different acid etchings in order to verify which treatment is able to remove incorporated particles of Al2O3 from the surface. One group of samples were only sandblasted and served as control. The samples were analyzed by electron microscopy (SEM, EDS, scanning probe microscopy, and grazing incidence XRD. The control group showed presence of Al2O3 on the surface. Three acid etchings were efficient in removing the alumina from the tested samples. Almost all the tested samples showed higher roughness parameters values than the control samples. Titanium hydride was found in almost all test groups. Moreover, the results suggest that there is no incorporation of the whole Al2O3 particle into the titanium surface after the collision, conversely a particle fragmentation occurs and what remains on the titanium surface are Al2O3 residues.

  5. Role of vibrationally excited HBr in a HBr/He inductively coupled plasma used for etching of silicon

    Science.gov (United States)

    Tinck, Stefan; Bogaerts, Annemie

    2016-06-01

    In this work, the role of vibrationally excited HBr (HBr(vib)) is computationally investigated for a HBr/He inductively coupled plasma applied for Si etching. It is found that at least 50% of all dissociations of HBr occur through HBr(vib). This additional dissociation pathway through HBr(vib) makes the plasma significantly more atomic. It also results in a slightly higher electron temperature (i.e. about 0.2 eV higher compared to simulation results where HBr(vib) is not included), as well as a higher gas temperature (i.e. about 50 K higher than without including HBr(vib)), due to the enhanced Franck-Condon heating through HBr(vib) dissociation, at the conditions investigated. Most importantly, the calculated etch rate with HBr(vib) included in the model is a factor 3 higher than in the case without HBr(vib), due to the higher fluxes of etching species (i.e. H and Br), while the chemical composition of the wafer surface shows no significant difference. Our calculations clearly show the importance of including HBr(vib) for accurate modeling of HBr-containing plasmas.

  6. Degradation of resin-dentin bonds of etch-and-rinse adhesive system to primary and permanent teeth

    Directory of Open Access Journals (Sweden)

    Tathiane Larissa Lenzi

    2012-12-01

    Full Text Available The aim of this in vitro study was to compare the degradation of resin-dentin bonds of an etch-and-rinse adhesive system to primary and permanent teeth. Flat superficial coronal dentin surfaces from 5 primary second molars and 5 permanent third molars were etched with phosphoric acid and bonded with an adhesive system (Adper Single Bond 2, 3M ESPE. Blocks of resin composite (Z250, 3M ESPE were built up and the teeth sectioned to produce bonded sticks with a 0.8 mm² cross-sectional area. The sticks of each tooth were randomly divided and assigned to be subjected to microtensile testing immediately (24 h or after aging by water storage (6 months. Data were analyzed by two-way repeated measures ANOVA and Tukey post hoc test (α = 0.05. Failure mode was evaluated using a stereomicroscope (400×. Microtensile values significantly decreased after the 6 months aging, independent of the dentin substrate. In 24 h, the values obtained to primary dentin were lower compared with permanent dentin. This difference was not maintained after aging. Adhesive/mixed failure was predominant in all experimental groups. In conclusion, degradation of resin-dentin bonds of the etch-and-rinse adhesive system occurred after 6 months of water storage; however, the reduction in bond strength values was higher for permanent teeth.

  7. On the origin of the 2.2-2.3 eV photoluminescence from chemically etched germanium

    CERN Document Server

    Kartopu, G; Karavanskij, V A; Curry, R J; Turan, R; Sapelkin, A V

    2003-01-01

    The photoluminescence (PL) at approx 2.2-2.3 eV from Ge-based nanocrystalline materials is described in the literature as nanocrystal size-independent. We have observed visible luminescence from two different types of stain-etched Ge samples, one prepared after Sendova-Vassileva et al. (Thin Solid Films 255 (1995) 282) in a solution of H sub 2 O sub 2 :HF at 50:1 volume ratio, and the other in a solution of HF:H sub 3 PO sub 4 :H sub 2 O sub 2 at 34:17:1 volume ratio. Energy dispersive X-ray analysis (EDX), Raman and FTIR spectroscopy, and the near edge X-ray absorption structure (XANES), indicate that the chemically etched Ge layers of the former type of samples are composed of non-stoichometric Ge oxides, i.e. GeO sub x (0etched Ge samples comprise 8-9 nm nanocrystals of Ge, surface-covered with mainly oxygen. Photoluminescence occurred at approx 2.3 eV for all samples. The PL behavior of ...

  8. Nanostructural effect of acid-etching and fluoride application on human primary and permanent tooth enamels

    International Nuclear Information System (INIS)

    Cheong, Youjin; Choi, Samjin; Kim, So Jung; Park, Hun-Kuk

    2012-01-01

    This study examined the nanostructural effects of fluoride application and the acid-etching time with respect to the time elapsed after fluoride application on the primary and permanent tooth enamel layers using atomic force microscopy (AFM) and scanning electron microscopy (SEM). 192 non-carious teeth were assigned to sixteen experimental groups (n = 12) including primary (1 to 8) and permanent (9 to 16) teeth, based on the timing of acid-etching with 37% phosphoric acid after an acidulated phosphate fluoride (APF) pre-treatment. The APF pre-treatment led to a decrease in surface roughness in both the primary and permanent teeth. After the APF treatment, the roughness in both primary and permanent teeth increased with the time elapsed. An acid-etching time of 40 s led to increased nanostructural changes in the enamel surfaces compared to the conventional acid-etching time of 20 s. This acid-etching process led to a higher roughness changes in the primary teeth than in the permanent teeth. To obtain proper enamel adhesion of a sealant after APF pre-treatment, it is important to apply acid-etching two weeks after pre-treatment. In addition, the acid-etching time should be prolonged to apply etching more quickly than two weeks, regardless of the primary and permanent teeth. Highlights: ► APF pre-treatment led to decreased surface roughness in the enamel. ► After APF treatment, the more roughness increased with increasing time elapsed. ► Acid-etching should be performed two weeks after fluoride application.

  9. Nanostructural effect of acid-etching and fluoride application on human primary and permanent tooth enamels

    Energy Technology Data Exchange (ETDEWEB)

    Cheong, Youjin [Department of Biomedical Engineering and Healthcare Industry Research Institute, College of Medicine, Kyung Hee University, Seoul (Korea, Republic of); Choi, Samjin [Department of Biomedical Engineering and Healthcare Industry Research Institute, College of Medicine, Kyung Hee University, Seoul (Korea, Republic of); Department of Orthodontics, College of Dental Medicine, Kyung Hee University, Seoul (Korea, Republic of); Kim, So Jung [Department of Pediatric Dentistry, College of Dental Medicine, Kyung Hee University, Seoul (Korea, Republic of); Park, Hun-Kuk, E-mail: sigmoidus@khu.ac.kr [Department of Biomedical Engineering and Healthcare Industry Research Institute, College of Medicine, Kyung Hee University, Seoul (Korea, Republic of); Program of Medical Engineering, Kyung Hee University, Seoul (Korea, Republic of)

    2012-07-01

    This study examined the nanostructural effects of fluoride application and the acid-etching time with respect to the time elapsed after fluoride application on the primary and permanent tooth enamel layers using atomic force microscopy (AFM) and scanning electron microscopy (SEM). 192 non-carious teeth were assigned to sixteen experimental groups (n = 12) including primary (1 to 8) and permanent (9 to 16) teeth, based on the timing of acid-etching with 37% phosphoric acid after an acidulated phosphate fluoride (APF) pre-treatment. The APF pre-treatment led to a decrease in surface roughness in both the primary and permanent teeth. After the APF treatment, the roughness in both primary and permanent teeth increased with the time elapsed. An acid-etching time of 40 s led to increased nanostructural changes in the enamel surfaces compared to the conventional acid-etching time of 20 s. This acid-etching process led to a higher roughness changes in the primary teeth than in the permanent teeth. To obtain proper enamel adhesion of a sealant after APF pre-treatment, it is important to apply acid-etching two weeks after pre-treatment. In addition, the acid-etching time should be prolonged to apply etching more quickly than two weeks, regardless of the primary and permanent teeth. Highlights: Black-Right-Pointing-Pointer APF pre-treatment led to decreased surface roughness in the enamel. Black-Right-Pointing-Pointer After APF treatment, the more roughness increased with increasing time elapsed. Black-Right-Pointing-Pointer Acid-etching should be performed two weeks after fluoride application.

  10. Characterization of selectively etched halloysite nanotubes by acid treatment

    Science.gov (United States)

    Garcia-Garcia, Daniel; Ferri, Jose M.; Ripoll, Laura; Hidalgo, Montserrat; Lopez-Martinez, Juan; Balart, Rafael

    2017-11-01

    Halloysite nanotubes (HNTs) are a type of naturally occurring inorganic nanotubes that are characterized by a different composition between their external and internal walls. The internal walls are mainly composed of alumina whilst external walls are composed of silica. This particular structure offers a dual surface chemistry that allows different selective surface treatments which can be focused on increasing the lumen, increasing porosity, etc. In this work, HNTs were chemically treated with different acids (sulphuric, acetic and acrylic acid), for 72 h at a constant temperature of 50 °C. As per the obtained results, the treatment with sulphuric acid is highly aggressive and the particular shape of HNTs is almost lost, with a remarkable increase in porosity. The BET surface area increases from 52.9 (untreated HNTs) up to 132.4 m2 g-1 with sulphuric acid treatment, thus showing an interesting potential in the field of catalysis. On the other hand, the treatment with acetic acid led to milder effects with a noticeable increase in the lumen diameter that changed from 13.8 nm (untreated HNTs) up to 18.4 nm which the subsequent increase in the loading capacity by 77.8%. The aluminium content was measured by X-ray fluorescence (XRF) and laser induced breakdown spectroscopy (LIBS). The final results using two systems, suggest a good correlation between the acid strength and the aluminium reduction. Consequently, is possible to conclude that new applications for HNTs can be derived from selective etching with acids. Sulphuric acid widens the potential of HNTs in the field of catalysis while weak acids such as acetic and acrylic acids give a controlled and homogeneous lumen increase with the corresponding increase in the loading capacity.

  11. Influence of the wafer biasing frequency upon etching of polymide

    International Nuclear Information System (INIS)

    Sauve, G.; Arnal, Y.; Grenier, R.; Moisan, M.

    1989-01-01

    In the commonly used RF capacitive discharge, the biasing voltage appearing on the wafer results from the discharge operating conditions and cannot be set independently, for example, from the plasma density. In electrodeless high frequency (HF) produced plasmas, independent biasing of the wafer is possible. In particular, one can set the biasing voltage at a frequency different from that of the HF field sustaining the plasma. In that respect, it has been shown that biasing the wafer at 13.56 MHz in a 2.45 GHz microwave sustained plasma can lead to a substantial increase in the etch rate. The influence on etch rate when biasing the wafer at frequencies f that are below and above the ion plasma frequency p i . This experiment is performed in a reactor that was recently developed for the study of the influence of the plasma stimulating frequency (13.56-2450 MHz) upon the etching of polyimide. In such a device, the plasma is sustained by a surface wave. In the present work, the authors are concerned with the etch rate of Ciba-Geigy XU-287 polyimide in an O 2 -CF 4 discharge sustained at a fixed frequency of 200 MHz

  12. Shear Bond Strength of an Etch-and-rinse Adhesive to Er:YAG Laser- and/or Phosphoric Acid-treated Dentin

    Directory of Open Access Journals (Sweden)

    Abdolrahim Davari

    2013-06-01

    Full Text Available Background and aims. Er:YAG laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. The aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following Er:YAG laser and/or phosphoric acid etching. Materials and methods. The roots of 75 sound maxillary premolars were sectioned below the CEJ and the crowns were embedded in auto-polymerizing acrylic resin with the buccal surfaces facing up. The buccal surfaces were ground using a diamond bur and polished until the dentin was exposed; the samples were randomly divided into five groups (n=15 according to the surface treatment: (1 acid etching; (2 laser etching; (3 laser etching followed by acid etching; (4 acid etching followed by laser etching and (5 no acid etching and no laser etching (control group. Composite resin rods (Point 4, Kerr Co were bonded to treated dentin surfaces with an etch-and-rise adhesive system (Optibond FL, Kerr Co and light-cured. After storage for two weeks at 37°C and 100% humidity and then thermocycling, bond strength was measured with a Zwick Universal Testing Machine at a crosshead speed of 1 mm/min. Data was analyzed using parametric and non-parametric tests (P<0.05. Results. Mean shear bond strength for acid etching (20.1±1.8 MPa and acid+laser (15.6±3.5 MPa groups were significantly higher than those for laser+acid (15.6±3.5 MPa, laser etching (14.1±3.4 MPa and control (8.1±2.1 MPa groups. However, there were no significant differences between acid etching and acid+laser groups, and between laser+acid and laser groups. Conclusion. When the cavity is prepared by bur, it is not necessary to etch the dentin surface by Er:YAG laser following acid etching and acid etching after laser etching.

  13. Bond strength of composite to dentin: effect of acid etching and laser irradiation through an uncured self-etch adhesive system

    International Nuclear Information System (INIS)

    Castro, F L A; Carvalho, J G; Andrade, M F; Saad, J R C; Hebling, J; Lizarelli, R F Z

    2014-01-01

    This study evaluated the effect on micro-tensile bond strength (µ-TBS) of laser irradiation of etched/unetched dentin through an uncured self-etching adhesive. Dentinal surfaces were treated with Clearfil SE Bond Adhesive (CSE) either according to the manufacturer’s instructions (CSE) or without applying the primer (CSE/NP). The dentin was irradiated through the uncured adhesive, using an Nd:YAG laser at 0.75 or 1 W power settings. The adhesive was cured, composite crowns were built up, and the teeth were sectioned into beams (0.49 mm 2 ) to be stressed under tension. Data were analyzed using one-way ANOVA and Tukey statistics (α = 5%). Dentin of the fractured specimens and the interfaces of untested beams were observed under scanning electron microscopy (SEM). The results showed that non-etched irradiated surfaces presented higher µ-TBS than etched and irradiated surfaces (p < 0.05). Laser irradiation alone did not lead to differences in µ-TBS (p > 0.05). SEM showed solidification globules on the surfaces of the specimens. The interfaces were similar on irradiated and non-irradiated surfaces. Laser irradiation of dentin through the uncured adhesive did not lead to higher µ-TBS when compared to the suggested manufacturer’s technique. However, this treatment brought benefits when performed on unetched dentin, since bond strengths were higher when compared to etched dentin. (paper)

  14. Bond strength of composite to dentin: effect of acid etching and laser irradiation through an uncured self-etch adhesive system

    Science.gov (United States)

    Castro, F. L. A.; Carvalho, J. G.; Andrade, M. F.; Saad, J. R. C.; Hebling, J.; Lizarelli, R. F. Z.

    2014-08-01

    This study evaluated the effect on micro-tensile bond strength (µ-TBS) of laser irradiation of etched/unetched dentin through an uncured self-etching adhesive. Dentinal surfaces were treated with Clearfil SE Bond Adhesive (CSE) either according to the manufacturer’s instructions (CSE) or without applying the primer (CSE/NP). The dentin was irradiated through the uncured adhesive, using an Nd:YAG laser at 0.75 or 1 W power settings. The adhesive was cured, composite crowns were built up, and the teeth were sectioned into beams (0.49 mm2) to be stressed under tension. Data were analyzed using one-way ANOVA and Tukey statistics (α = 5%). Dentin of the fractured specimens and the interfaces of untested beams were observed under scanning electron microscopy (SEM). The results showed that non-etched irradiated surfaces presented higher µ-TBS than etched and irradiated surfaces (p 0.05). SEM showed solidification globules on the surfaces of the specimens. The interfaces were similar on irradiated and non-irradiated surfaces. Laser irradiation of dentin through the uncured adhesive did not lead to higher µ-TBS when compared to the suggested manufacturer’s technique. However, this treatment brought benefits when performed on unetched dentin, since bond strengths were higher when compared to etched dentin.

  15. Liquid-phase mass transfer in wet etching for printed circuit board

    International Nuclear Information System (INIS)

    Matsumoto, K.; Taniguchi, S.; Kikuchi, A.; Arai, H.

    1999-01-01

    Wet etching of copper foil was studied in an agitated vessel containing aqueous solutions composed Of CuC1 2 and HC1. To confirm the rate-limiting species, dissolution rate of CuC1 plate was measured and compared with that of copper. From those results, it was concluded that CuC1 is precipitated on the solid surface during the etching of copper, and the rate is controlled by the diffusion rate Of CuC1 2 . By the use of observed diffusivity, a mass-transfer model has been developed and applied to the analysis of the pattern etching with cavity formation. (author)

  16. Dry etching technologies for reflective multilayer

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  17. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  18. Room temperature inductively coupled plasma etching of InAs/InSb in BCl 3/Cl 2/Ar

    KAUST Repository

    Sun, Jian

    2012-10-01

    Inductively coupled plasma (ICP) etching of InAs and InSb at room temperature has been investigated using BCl 3/Cl 2/Ar plasma. Specifically, the etch rate and post-etching surface morphology were investigated as functions of the gas composition, ICP power, process pressure, and RF chuck power. An optimized process has been developed, yielding anisotropic etching and very smooth surfaces with roughnesses of 0.25 nm for InAs, and 0.57 nm for InSb, which is comparable with the surface of epi-ready polished wafers. The process provides moderate etching rates of 820 /min for InAs and 2800 /min for InSb, and the micro-masking effect is largely avoided. © 2012 Elsevier B.V. All rights reserved.

  19. Effect of postoperative bleaching on microleakage of etch-and-rinse and self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Vajihesadat Mortazavi

    2011-01-01

    Full Text Available Background: Bleaching the discoloured teeth may affect the tooth/composite interface. The aim of this in vitro experimental study was to evaluate the effect of vital tooth bleaching on microleakage of existent class V composite resin restorations bonded with three dental bonding agents. Methods : Class V cavities were prepared on buccal surfaces of 72 intact, extracted human anterior teeth with gingival margins in dentin and occlusal margins in enamel, and randomly divided into 3 groups. Cavities in the three groups were treated with Scotch bond Multi-Purpose, a total etch system and Prompt L-Pop and iBond, two self-etch adhesives. All teeth were restored with Z250 resin composite material and thermo-cycled. Each group was equally divided into the control and the bleached subgroups (n = 12. The bleached subgroups were bleached with 15% carbamide peroxide gel for 8 hours a day for 15 days. Microleakage scores were evaluated on the incisal and cervical walls. Data were analyzed using Kruskal-Wallis, Mann-Whitney and Bonferroni post-hoc tests (α = 0.05. Results: Bleaching with carbamide peroxide gel significantly increased the microleakage of composite restorations in Prompt L-Pop group at dentinal walls (P = 0.001. Bleaching had no effect on microleakage of restorations in the Scotch bond Multi-Purpose and iBond groups. Conclusion: Vital tooth bleaching with carbamide peroxide gel has an adverse effect on marginal seal of dentinal walls of existent composite resin restorations bonded with prompt L-Pop self-etch adhesive.

  20. Researching the Aluminum Nitride Etching Process for Application in MEMS Resonators

    Directory of Open Access Journals (Sweden)

    Jian Yang

    2015-02-01

    Full Text Available We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO2 is used. The etching rate, selectivity, sidewall angle, bottom surface roughness and microtrench are studied as a function of the gas flow rate, bias power and chamber pressure. The relations among those parameters are reported and theoretical analyses are given. By optimizing the etching parameters, the bottom surface roughness of 1.98 nm and the sidewall angle of 83° were achieved. This etching process can meet the manufacturing requirements of aluminum nitride MEMS resonator.

  1. Etching nano-holes in silicon carbide using catalytic platinum nano-particles

    Science.gov (United States)

    Moyen, E.; Wulfhekel, W.; Lee, W.; Leycuras, A.; Nielsch, K.; Gösele, U.; Hanbücken, M.

    2006-09-01

    The catalytic reaction of platinum during a hydrogen etching process has been used to perform controlled vertical nanopatterning of silicon carbide substrates. A first set of experiments was performed with platinum powder randomly distributed on the SiC surface. Subsequent hydrogen etching in a hot wall reactor caused local atomic hydrogen production at the catalyst resulting in local SiC etching and hole formation. Secondly, a highly regular and monosized distribution of Pt was obtained by sputter deposition of Pt through an Au membrane serving as a contact mask. After the lift-off of the mask, the hydrogen etching revealed the onset of well-controlled vertical patterned holes on the SiC surface.

  2. STUDY ON THE EFFECTS OF ACID ETCHING ON AFFECTED ENAMEL

    Directory of Open Access Journals (Sweden)

    Simona Stoleriu

    2011-12-01

    Full Text Available The purpose of the study was to establish and compare the effects of ortophosphoric and hydrochloric acids on the enamel affected by incipient carious lesions with different evolution. Materials and method. 20 teeth with acute and chronic non-cavitary carious lesions were considered for the study. The teeth were sectioned in two halves through the middle of the non-cavitary lesions. The halves of 5 white spot-type lesions and of 5 brown spot-type ones were analyzed as to their surface roughness, on an atomic force microscope (AFM. 5 halves with white spot-type lesions and 5 halves with brown spot-type ones were subjected to acid etching with 37% ortophosphoric acid (Scotchbond etchant gel, 3M ESPE, and an equal number of samples was subjected to the action of 15% hydrochloric acid (ICON-etch, DMG Dental Products Ltd for 2 min, then washed with water and analyzed by AFM. Results. The initial surface roughness of the enamel was higher in the white spot–type carious lesions, comparatively with the brown spot-type ones. For both types of carious non-cavitary lesions, acid etching with phosphoric and hydrochloric acid significantly increased the surface roughness of the enamel, comparatively with the status of the enamel surface prior to etching. The hydrochloric acid led to a surface roughness significantly higher than in the case of ortophosphoric acid, in both acute and chronic non-cavitary carious lesions. The roughness values obtained through etching with ortophosphoric and hydrochloric acid were higher in the white spot-type carious lesions, comparatively with the brown spot-type ones. Conclusions. Both the 37% ortophosphoric acid and the 15% hydrochloric acid determined a significantly higher surface roughness of the enamel affected by acute and chronic non-cavitary carious lesions. The surface condition of the brown spot-type carious lesions was less significantly modified, comparatively with that of the white spot-type lesions, by the

  3. Enamel deproteinization and its effect on acid etching: an in vitro study.

    Science.gov (United States)

    Espinosa, Roberto; Valencia, Roberto; Uribe, Mario; Ceja, Israel; Saadia, Marc

    2008-01-01

    The goal of this in vitro study was to identify the topographical features of the enamel surface deproteinized and etched with phosphoric acid (H3PO4) compared to phosphoric acid alone. Ten extracted lower first and second permanent molars were polished with pumice and water, and then divided into 4 equal buccal sections having similar physical and chemical properties. The enamel surfaces of each group were subjected to the following treatments: Group A: Acid Etching with H3PO4 37% for 15 seconds. Group AH1: Sodium Hypochlorite (NaOCl) 5.25% for 30 seconds followed by Acid Etching with H3PO4 37% for 15 seconds. Group AH2; Sodium Hypochlorite (NaOCl) 5.25% for 60 seconds followed by Acid Etching with H3PO4 37% for 15 seconds. Results showed that group AH2 etching technique reached an area of 76.6 mm2 of the total surface, with a 71.8 mm2 (94.47%), type 1 and 2 etching pattern, followed by group AH1 with 55.9 mm2 out of 75.12 mm2 (74.1%), and finally group A with only 36.8 mm2 (48.83%) out of an area of 72.7 mm2. A significant statistical difference (P enamel deproteinization with 5.25% NaOCl for 1 minute before H3PO4, etching increases the enamel conditioning surface as well as the quality of the etching pattern.

  4. Isotropic etching of silicon in fluoride containing solutions as a tool for micromachining

    OpenAIRE

    Tjerkstra, R.W.

    1999-01-01

    μTAS is hot in micromechanics today. All μTAS devices contain channels to connect the different components together. Channels can also be used as chromatography columns. Isotropic wet chemical etching of silicon can be a suitable process to construct (hemi)circular channels with very smooth surfaces. Wet etching of silicon can be done chemically, using aqueous solutions of HF and HNO , or electrochemically, using aqueous HF solutions. Both processes suffer from the loading-effect: due to extr...

  5. Enamel Deproteinization using Papacarie and 10% Papain Gel on Shear Bond Strength of Orthodontic Brackets Before and After Acid Etching.

    Science.gov (United States)

    Agarwal, R M; Yeluri, R; Singh, C; Munshi, A K

    2015-01-01

    To suggest Papacarie(®) as a new deproteinizing agent in comparison with indigenously prepared 10% papain gel before and after acid etching that may enhance the quality of the bond between enamel surface and composite resin complex. One hundred and twenty five extracted human premolars were utilized and divided into five groups: In the group 1, enamel surface was etched and primer was applied. In group 2, treatment with papacarie(®) for 60 seconds followed by etching and primer application. In group 3, etching followed by treatment with papacarie(®) for 60 seconds and primer application. In group 4, treatment with 10% papain gel for 60 seconds followed by etching and primer application. In group 5, etching followed by treatment with 10% papain gel for 60 seconds and primer application . After bonding the brackets, the mechanical testing was performed using a Universal testing machine. The failure mode was analyzed using an adhesive remnant index. The etching patterns before and after application of papacarie(®) and 10% papain gel was also evaluated using SEM. The values obtained for shear bond strength were submitted to analysis of variance and Tukey test (p deproteinize the enamel surface before acid etching to enhance the bond strength of orthodontic brackets.

  6. High-aspect ratio micro- and nanostructures enabled by photo-electrochemical etching for sensing and energy harvesting applications

    Science.gov (United States)

    Alhalaili, Badriyah; Dryden, Daniel M.; Vidu, Ruxandra; Ghandiparsi, Soroush; Cansizoglu, Hilal; Gao, Yang; Saif Islam, M.

    2018-03-01

    Photo-electrochemical (PEC) etching can produce high-aspect ratio features, such as pillars and holes, with high anisotropy and selectivity, while avoiding the surface and sidewall damage caused by traditional deep reactive ion etching (DRIE) or inductively coupled plasma (ICP) RIE. Plasma-based techniques lead to the formation of dangling bonds, surface traps, carrier leakage paths, and recombination centers. In pursuit of effective PEC etching, we demonstrate an optical system using long wavelength (λ = 975 nm) infra-red (IR) illumination from a high-power laser (1-10 W) to control the PEC etching process in n-type silicon. The silicon wafer surface was patterned with notches through a lithography process and KOH etching. Then, PEC etching was introduced by illuminating the backside of the silicon wafer to enhance depth, resulting in high-aspect ratio structures. The effect of the PEC etching process was optimized by varying light intensities and electrolyte concentrations. This work was focused on determining and optimizing this PEC etching technique on silicon, with the goal of expanding the method to a variety of materials including GaN and SiC that are used in designing optoelectronic and electronic devices, sensors and energy harvesting devices.

  7. Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching

    International Nuclear Information System (INIS)

    Boukezzata, A.; Keffous, A.; Cheriet, A.; Belkacem, Y.; Gabouze, N.; Manseri, A.; Nezzal, G.; Kechouane, M.; Bright, A.; Guerbous, L.; Menari, H.

    2010-01-01

    In this work, we present the formation of porous layers on hydrogenated amorphous SiC (a-SiC: H) by Ag-assisted photochemical etching using HF/K 2 S 2 O 8 solution under UV illumination at 254 nm wavelength. The amorphous films a-SiC: H were elaborated by d.c. magnetron sputtering using a hot pressed polycrystalline 6H-SiC target. Because of the high resistivity of the SiC layer, around 1.6 MΩ cm and in order to facilitate the chemical etching, a thin metallic film of high purity silver (Ag) has been deposited under vacuum onto the thin a-SiC: H layer. The etched surface was characterized by scanning electron microscopy, secondary ion mass spectroscopy, infrared spectroscopy and photoluminescence. The results show that the morphology of etched a-SiC: H surface evolves with etching time. For an etching time of 20 min the surface presents a hemispherical crater, indicating that the porous SiC layer is perforated. Photoluminescence characterization of etched a-SiC: H samples for 20 min shows a high and an intense blue PL, whereas it has been shown that the PL decreases for higher etching time. Finally, a dissolution mechanism of the silicon carbide in 1HF/1K 2 S 2 O 8 solution has been proposed.

  8. Effect of phosphoric acid etching on the shear bond strength of two self-etch adhesives

    Science.gov (United States)

    SABATINI, Camila

    2013-01-01

    Objective: To evaluate the effect of optional phosphoric acid etching on the shear bond strength (SBS) of two self-etch adhesives to enamel and dentin. Material and Methods: Ninety-six bovine mandibular incisors were ground flat to obtain enamel and dentin substrates. A two-step self-etch adhesive (FL-Bond II) and a one-step self-etch adhesive (BeautiBond) were applied with and without a preliminary acid etching to both the enamel and dentin. The specimens were equally and randomly assigned to 4 groups per substrate (n=12) as follows: FL-Bond II etched; FL-Bond II un-etched; BeautiBond etched; BeautiBond un-etched. Composite cylinders (Filtek Z100) were bonded onto the treated tooth structure. The shear bond strength was evaluated after 24 hours of storage (37ºC, 100% humidity) with a testing machine (Ultra-tester) at a speed of 1 mm/min. The data was analyzed using a two-way ANOVA and post-hoc Tukey's test with a significance level of pself-etch adhesives evaluated while providing improvement on the enamel bond strength only for FL-Bond II. This suggests that the potential benefit that may be derived from an additional etching step with phosphoric acid does not justify the risk of adversely affecting the bond strength to dentin. PMID:23559113

  9. Deep reactive ion etching of fused silica using a single-coated soft mask layer for bio-analytical applications

    International Nuclear Information System (INIS)

    Ray, Tathagata; Zhu, Haixin; Meldrum, Deirdre R

    2010-01-01

    In this note, we present our results from process development and characterization of reactive ion etching (RIE) of fused silica using a single-coated soft masking layer (KMPR® 1025, Microchem Corporation, Newton, MA). The effects of a number of fluorine-radical-based gaseous chemistries, the gas flow rate, RF power and chamber pressure on the etch rate and etching selectivity of fused silica were studied using factorial experimental designs. RF power and pressure were found to be the most important factors in determining the etch rate. The highest fused silica etch rate obtained was about 933 Å min −1 by using SF 6 -based gas chemistry, and the highest etching selectivity between the fused silica and KMPR® 1025 was up to 1.2 using a combination of CF 4 , CHF 3 and Ar. Up to 30 µm deep microstructures have been successfully fabricated using the developed processes. The average area roughness (R a ) of the etched surface was measured and results showed it is comparable to the roughness obtained using a wet etching technique. Additionally, near-vertical sidewalls (with a taper angle up to 85°) have been obtained for the etched microstructures. The processes developed here can be applied to any application requiring fabrication of deep microstructures in fused silica with near-vertical sidewalls. To our knowledge, this is the first note on deep RIE of fused silica using a single-coated KMPR® 1025 masking layer and a non-ICP-based reactive ion etcher. (technical note)

  10. Fabrication of thin vertical mirrors through plasma etch and KOH:IPA polishing for integration into MEMS electrostatic actuators

    Science.gov (United States)

    Huda, M. Q.; Amin, T. M. F.; Ning, Y.; McKinnon, G.; Tulip, J.; Jäger, W.

    2013-03-01

    We developed a process for the fabrication of thin vertical mirrors as integrated structures of MEMS electrostatic actuators. The mirrors can be implemented as a vertical extension of the actuator sidewall, or can be positioned at any movable part of the actuator. The process involves the fabrication of a mesa structure on the handle layer of a silicon-oninsulator (SOI) wafer through deep reactive ion etching (DRIE). The etch/passivation cycles of the DRIE process were optimized to achieve vertical etch profiles with a depth of up to 200 μm with an aspect ratio of 10:1. The DRIE process introduced typical etch scallops with peak-to-valley and rms roughnesses on the order of 100 nm and 30 nm, respectively. A mask layer was used to pattern a 2.1 μm sacrificial oxide layer for the mesa structure. A second mask layer allowed us to define a large etch cavity for handle layer back-etch. The DRIE etched mesa structure was then etched with diluted potassium hydroxide (KOH) in isopropyl alcohol (IPA). Temperature and etch concentration were optimized for the removal of etch scallops without the formation of etch facets. The etch scallops were almost completely removed and mirror quality surfaces were achieved. The developed mesa structures are suitable for integration into actuators that are patterned in the device layer. A third masking layer, aligned through infrared camera, was used to position the thin vertical mirror at the actuator sidewall. The process provides design flexibility in integrating vertical mirrors of adjustable dimensions to movable elements of MEMS structures.

  11. Consequences of atomic layer etching on wafer scale uniformity in inductively coupled plasmas

    Science.gov (United States)

    Huard, Chad M.; Lanham, Steven J.; Kushner, Mark J.

    2018-04-01

    Atomic layer etching (ALE) typically divides the etching process into two self-limited reactions. One reaction passivates a single layer of material while the second preferentially removes the passivated layer. As such, under ideal conditions the wafer scale uniformity of ALE should be independent of the uniformity of the reactant fluxes onto the wafers, provided all surface reactions are saturated. The passivation and etch steps should individually asymptotically saturate after a characteristic fluence of reactants has been delivered to each site. In this paper, results from a computational investigation are discussed regarding the uniformity of ALE of Si in Cl2 containing inductively coupled plasmas when the reactant fluxes are both non-uniform and non-ideal. In the parameter space investigated for inductively coupled plasmas, the local etch rate for continuous processing was proportional to the ion flux. When operated with saturated conditions (that is, both ALE steps are allowed to self-terminate), the ALE process is less sensitive to non-uniformities in the incoming ion flux than continuous etching. Operating ALE in a sub-saturation regime resulted in less uniform etching. It was also found that ALE processing with saturated steps requires a larger total ion fluence than continuous etching to achieve the same etch depth. This condition may result in increased resist erosion and/or damage to stopping layers using ALE. While these results demonstrate that ALE provides increased etch depth uniformity, they do not show an improved critical dimension uniformity in all cases. These possible limitations to ALE processing, as well as increased processing time, will be part of the process optimization that includes the benefits of atomic resolution and improved uniformity.

  12. Plasma etch technologies for the development of ultra-small feature size transistor devices

    International Nuclear Information System (INIS)

    Borah, D; Shaw, M T; Rasappa, S; Farrell, R A; O'Mahony, C; Faulkner, C M; Bosea, M; Gleeson, P; Holmes, J D; Morris, M A

    2011-01-01

    The advances in information and communication technologies have been largely predicated around the increases in computer processor power derived from the constant miniaturization (and consequent higher density) of individual transistors. Transistor design has been largely unchanged for many years and progress has been around scaling of the basic CMOS device. Scaling has been enabled by photolithography improvements (i.e. patterning) and secondary processing such as deposition, implantation, planarization, etc. Perhaps the most important of the secondary processes is the plasma etch methodology whereby the pattern created by lithography is 'transferred' to the surface via a selective etch to remove exposed material. However, plasma etch technologies face challenges as scaling continues. Maintaining absolute fidelity in pattern transfer at sub-16 nm dimensions will require advances in plasma technology (plasma sources, chamber design, etc) and chemistry (etch gases, flows, interactions with substrates, etc). In this paper, we illustrate some of these challenges by discussing the formation of ultra-small device structures from the directed self-assembly of block copolymers (BCPs) where nanopatterns are formed from the micro-phase separation of the system. The polymer pattern is transferred by a double etch procedure where one block is selectively removed and the remaining block acts as a resist pattern for silicon pattern transfer. Data are presented which shows that highly regular nanowire patterns of feature size below 20 nm can be created using etch optimization techniques and in this paper we demonstrate generation of crystalline silicon nanowire arrays with feature sizes below 8 nm. BCP techniques are demonstrated to be applicable from these ultra-small feature sizes to 40 nm dimensions. Etch profiles show rounding effects because etch selectivity in these nanoscale resist patterns is limited and the resist thickness rather low. The nanoscale nature of the

  13. Chemical method for producing smooth surfaces on silicon wafers

    Science.gov (United States)

    Yu, Conrad

    2003-01-01

    An improved method for producing optically smooth surfaces in silicon wafers during wet chemical etching involves a pre-treatment rinse of the wafers before etching and a post-etching rinse. The pre-treatment with an organic solvent provides a well-wetted surface that ensures uniform mass transfer during etching, which results in optically smooth surfaces. The post-etching treatment with an acetic acid solution stops the etching instantly, preventing any uneven etching that leads to surface roughness. This method can be used to etch silicon surfaces to a depth of 200 .mu.m or more, while the finished surfaces have a surface roughness of only 15-50 .ANG. (RMS).

  14. INTERFACIAL FREE-ENERGY CHANGES OCCURRING DURING BSA ADSORPTION IN SOLUTION DROPLETS ON FEP-TEFLON SURFACES AS MEASURED BY ADSA-P

    NARCIS (Netherlands)

    BUSSCHER, HJ; VANDERVEGT, W; SCHAKENRAAD, JM; VANDERMEI, HC

    1991-01-01

    Axisymmetric drop shape analysis by profile (ADSA-P) was employed to determine the interfacial free energy changes occurring during bovine serum albumin (BSA) adsorption from solution droplets on fluoroethylenepropylene-Teflon (FEP-Teflon). 100-mu-l droplets of BSA solutions on FEP-Teflon were

  15. A passive monitor for radon using electrochemical track etch detector

    International Nuclear Information System (INIS)

    Massera, G.E.; Hassib, G.M.; Piesch, E.

    1980-01-01

    A passive, inexpensive monitor for radon detection and dosimetry is described in detail. It consists of a Makrofoil track etch detector inside a diffusion chamber which is sealed by a fibreglass filter through which radon may diffuse while radon daughters and aerosols are retained on the surface of the filter. The α-particle tracks are revealed by etching the Makrofoil in KOH. The lower detection limit of the radon dosimeter is equivalent to a mean dose in the lung of 130 mrem. After an exposure period of 3 months, a mean radon concentration of 0.3 pCi/l can be detected. The instrument is intended for use in a study to measure the long-term radon exposure in buildings in West Germany. (UK)

  16. Ion energy distributions and sidewall profiles in reactive ion etching

    International Nuclear Information System (INIS)

    May, P.W.; Field, D.; Klemperer, D.F.; Song, Y.P.

    1993-01-01

    We present a brief resume of modelling of ion trajectories in radio frequency discharges of interest in reactive ion etching of semiconductors. The procedures for calculating the energies and angles at which ions strike the substrate surface are described. Examples of ion energy distributions (IEDs) and angular distributions (IADs) are given both for low pressure, collisionless-sheath plasmas, and for higher pressure conditions, where collisions significantly modify ion trajectories. Fast neutral particles formed in the sheath by collision processes are also considered. Computer modelling of the evolution of sidewall profiles during etch processes is discussed, and examples are given of profiles calculated using IED and IAD data both at low and high pressures. (orig.)

  17. Investigation of plasma etch induced damage in compound semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Shul, R.J.; Lovejoy, M.L.; Hetherington, D.L.; Rieger, D.J.; Vawter, G.A.; Klem, J.F. [Sandia National Labs., Albuquerque, NM (United States); Melloch, M.R. [Purdue Univ., Lafayette, IN (United States). School of Electrical Engineering

    1993-11-01

    We have investigated the electrical performance of mesa-isolated GaAs pn-junction diodes to determine the plasma-induced damage effects from reactive ion and reactive ion beam etching. A variety of plasma chemistries (SiCl{sub 4}, BCl{sub 3}, BCl{sub 3}/Cl{sub 2}, and Cl{sub 2}) and ion energies ranging from 100 to 400 eV were studied. We have observed that many of the RIE BCl{sub 3}/Cl{sub 2} plasmas and RIBE Cl{sub 2} plasmas yield diodes with low reverse-bias currents that are comparable to the electrical characteristics of wet-chemical-etched devices. The reverse-bias leakage currents are independent of surface morphology and sidewall profiles.

  18. Bulk etching characteristics of CR-39 track detectors in hydroxide solutions

    International Nuclear Information System (INIS)

    Fonseca, E.S. da; Knoefel, T.M.J.; Tavares, O.A.P.

    1983-01-01

    A systematic study of the bulk etch rate of CR-39 track detectors in KOH and NaOH aqueous solutions is presented. A number of unirradiated and non-thermally treated CR-39 samples were chemically attacked in KOH and NaOH solutions of concentration and temperature in the range 2-10 N and 50-90 0 C, respectively. From measurements of the thickness of layers removed as a function of the etching time, the bulk etch rate υ β and the induction time T ο for surface removal were obtained for each etching condition. For both NaOH and KOH solution the activation energy of the process was derived as E = 0.76 ± 0.05 eV. It was observed that the induction time decreases both with increasing normality and temperature of the solution. (author) [pt

  19. Estimation of Ion/Radical Flux from Mask Selectivity and Etching Rate Calibrated by Topography Simulation

    Science.gov (United States)

    Ohmine, Toshimitsu; Deshpande, Vaibhav; Takada, Hideki; Ikeda, Tomoharu; Saito, Hirokazu; Kawai, Fumiaki; Hamada, Kimimori

    2011-08-01

    A simple method for the estimation of ion/radical fluxes in an ion-assisted etching process was developed for SF6/O2/Si etching utilizing the difference in etching mechanism between SiO2 mask and the silicon substrate. It was derived that F coverage of a silicon surface is approximately a linear function of the selectivity of the two materials, from which the incident ion flux and F flux are calculated. The selectivity-to-coverage proportional constant was determined using a topography simulator so that the general trend of etching profiles matched those of the experiment. The obtained fluxes showed reasonable qualitative trends in terms of reactor operational conditions and reactor parameters. The feature profiles simulated by the topography simulator using these flux values were in good agreement with those of scanning electron microscopy (SEM) experimental data over a wide range of operating conditions and machine configurations.

  20. Combined D-optimal design and generalized regression neural network for modeling of plasma etching rate

    Directory of Open Access Journals (Sweden)

    You Hailong

    2014-01-01

    Full Text Available Plasma etching process plays a critical role in semiconductor manufacturing. Because physical and chemical mechanisms involved in plasma etching are extremely complicated, models supporting process control are difficult to construct. This paper uses a 35-run D-optimal design to efficiently collect data under well planned conditions for important controllable variables such as power, pressure, electrode gap and gas flows of Cl2 and He and the response, etching rate, for building an empirical underlying model. Since the relationship between the control and response variables could be highly nonlinear, a generalized regression neural network is used to select important model variables and their combination effects and to fit the model. Compared with the response surface methodology, the proposed method has better prediction performance in training and testing samples. A success application of the model to control the plasma etching process demonstrates the effectiveness of the methods.

  1. Influence of processing parameters on atmospheric pressure plasma etching of polyamide 6 films

    Science.gov (United States)

    Gao, Zhiqiang; Peng, Shujing; Sun, Jie; Yao, Lan; Qiu, Yiping

    2009-06-01

    This study is designed to systematically investigate how various factors, such as treatment duration, output power, oxygen gas flux, jet to substrate distance, and moisture regain, influence atmospheric pressure plasma etching rate of polyamide 6 (PA 6) films. The etching rate increased as the output power, oxygen gas flux, and moisture regain increased. As the treatment time increased, the etching rate increased first and then decreased. When the substrate was too close or too far from the nozzle, the etching rate was almost not measurable. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) show an increased surface roughness after the plasma treatment. X-ray photoelectron spectroscopy (XPS) shows a decreased carbon content and an increased oxygen content after the plasma treatment. T-peel strength shows an improved bonding strength between the PA 6 films and an adhesive tape after the plasma treatment.

  2. Silver ion mediated shape control of platinum nanoparticles: Removal of silver by selective etching leads to increased catalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Grass, Michael E.; Yue, Yao; Habas, Susan E.; Rioux, Robert M.; Teall, Chelsea I.; Somorjai, G.A.

    2008-01-09

    A procedure has been developed for the selective etching of Ag from Pt nanoparticles of well-defined shape, resulting in the formation of elementally-pure Pt cubes, cuboctahedra, or octahedra, with a largest vertex-to-vertex distance of {approx}9.5 nm from Ag-modified Pt nanoparticles. A nitric acid etching process was applied Pt nanoparticles supported on mesoporous silica, as well as nanoparticles dispersed in aqueous solution. The characterization of the silica-supported particles by XRD, TEM, and N{sub 2} adsorption measurements demonstrated that the structure of the nanoparticles and the mesoporous support remained conserved during etching in concentrated nitric acid. Both elemental analysis and ethylene hydrogenation indicated etching of Ag is only effective when [HNO{sub 3}] {ge} 7 M; below this concentration, the removal of Ag is only {approx}10%. Ethylene hydrogenation activity increased by four orders of magnitude after the etching of Pt octahedra that contained the highest fraction of silver. High-resolution transmission electron microscopy of the unsupported particles after etching demonstrated that etching does not alter the surface structure of the Pt nanoparticles. High [HNO{sub 3}] led to the decomposition of the capping agent, polyvinylpyrollidone (PVP); infrared spectroscopy confirmed that many decomposition products were present on the surface during etching, including carbon monoxide.

  3. Reactive species generated during wet chemical etching of silicon in HF/HNO3 mixtures.

    Science.gov (United States)

    Steinert, Marco; Acker, Jörg; Krause, Matthias; Oswald, Steffen; Wetzig, Klaus

    2006-06-15

    The role of intermediate species generated during wet chemical etching of silicon in a HF-rich HF/HNO3 mixture was studied by spectroscopic and analytical methods at 1 degrees C. The intermediate N2O3 was identified by its cobalt blue color and the characteristic features in its UV-vis and Raman spectra. Furthermore, a complex N(III) species (3NO+.NO3-) denoted as [N4O6(2+)] is observed in these solutions. The time-dependent decay of the N(III) intermediates, mainly by their oxidation at the liquid-air interface, serves as a precondition for the study of the etch rate as function of the intermediate concentration measured by Raman spectroscopy. From a linear relationship between etch rate and [N4O6(2+)] concentration, NO+ is considered to be a reactive species in the rate-limiting step. This step is attributed to the oxidation of permanent existing Si-H bonds at the silicon surface by the reactive NO+ species. N2O3 serves as a reservoir for the generation of NO+ leading to a complete coverage of the silicon surface with reactive species at high intermediate concentrations. As long as this condition is valid (plateau region), the etch rate is constant and yields a smooth silicon surface upon completion of the etching. If the N2O3 concentration is insufficient to ensure a coverage of the Si surface by NO+, the etch rate decreases linearly with the N2O3 concentration and results in a roughening of the etched silicon surface (slope region).

  4. No positive effect of Acid etching or plasma cleaning on osseointegration of titanium implants in a canine femoral condyle press-fit model

    DEFF Research Database (Denmark)

    Saksø, Henrik; Jakobsen, Thomas Vestergaard; Mortensen, Mikkel Saksø

    2013-01-01

    Implant surface treatments that improve early osseointegration may prove useful in long-term survival of uncemented implants. We investigated Acid Etching and Plasma Cleaning on titanium implants.......Implant surface treatments that improve early osseointegration may prove useful in long-term survival of uncemented implants. We investigated Acid Etching and Plasma Cleaning on titanium implants....

  5. Performance enhancement of membrane electrode assemblies with plasma etched polymer electrolyte membrane in PEM fuel cell

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Yong-Hun; Yoon, Won-Sub [School of Advanced Materials Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea); Bae, Jin Woo; Cho, Yoon-Hwan; Lim, Ju Wan; Ahn, Minjeh; Jho, Jae Young; Sung, Yung-Eun [World Class University (WCU) program of Chemical Convergence for Energy and Environment (C2E2), School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), 599 Gwanak-Ro, Gwanak-gu, Seoul 151-744 (Korea); Kwon, Nak-Hyun [Fuel Cell Vehicle Team 3, Advanced Technology Center, Corporate Research and Development Division, Hyundai-Kia Motors, 104 Mabuk-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-912 (Korea)

    2010-10-15

    In this work, a surface modified Nafion 212 membrane was fabricated by plasma etching in order to enhance the performance of a membrane electrode assembly (MEA) in a polymer electrolyte membrane fuel cell. Single-cell performance of MEA at 0.7 V was increased by about 19% with membrane that was etched for 10 min compared to that with untreated Nafion 212 membrane. The MEA with membrane etched for 20 min exhibited a current density of 1700 mA cm{sup -2} at 0.35 V, which was 8% higher than that of MEA with untreated membrane (1580 mA cm{sup -2}). The performances of MEAs containing etched membranes were affected by complex factors such as the thickness and surface morphology of the membrane related to etching time. The structural changes and electrochemical properties of the MEAs with etched membranes were characterized by field emission scanning electron microscopy, Fourier transform-infrared spectrometry, electrochemical impedance spectroscopy, and cyclic voltammetry. (author)

  6. A deep etching mechanism for trench-bridging silicon nanowires

    International Nuclear Information System (INIS)

    Tasdemir, Zuhal; Alaca, B Erdem; Wollschläger, Nicole; Österle, Werner; Leblebici, Yusuf

    2016-01-01

    Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping. (paper)

  7. Anisotropic etching of p-Si in HF solution

    International Nuclear Information System (INIS)

    Outemzabet, R.; Benzekour, N.; Gabouze, N.; Kesri, N.; Ait-Hamouda, K.

    2003-01-01

    In situ electrochemical attenuated total reflection Fourier transform infrared spectroscopy has been used to study the etching process on a Si (100), (110) and (111) surface in dilute HF solution. On the other hand I-V characteristic of the p-Si-HF system was used for the interface reactions and kinetics study. Infrared results show that monohydride (SiH) and hydroxyl (Si-OH) species surface concentration depend on the applied potential to the electrode. I-V characteristics show a relative variation in magnitude of the first peak as the substrate orientation is changed. A mechanism of silicon dissolution is proposed (Authors)

  8. Self-etch or etch-and-rinse mode did not affect the microshear bond strength of a universal adhesive to primary dentin.

    Science.gov (United States)

    Thanaratikul, Benjaporn; Santiwong, Busayarat; Harnirattisai, Choltacha

    2016-01-01

    This study evaluated the microshear bond strength (µSBS) of resin composite to primary dentin using a universal adhesive in etchand-rinse mode or self-etch mode. Flat ground dentin surfaces were created on forty extracted human primary incisors and randomly assigned into four groups (n=10): Adper Single Bond II (ASB), Clearfil SE Bond (CSE), Single Bond Universal etch-and-rinse (SBUER) and Single Bond Universal self-etch (SBU-SE). Adhesive was applied on the dentin surface, which was subsequently bonded with a resin composite. The µSBS test was performed using a universal testing machine at a crosshead speed of 1 mm/min. The ASB group generated a lower mean µSBS (19.1±3.4 MPa) than those of the other groups [SBU-ER (24.3±2.7 MPa), SBU-SE (25.1±2.4 MPa), and CSE (25.3±2.7 MPa)]. Adhesive failure was the most common failure mode in each group. In conclusion, SBU used in etch-and-rinse or self-etch mode resulted in similar bond strength to primary dentin.

  9. Neutron-induced modifications on Hostaphan and Makrofol wettability and etching behaviors

    International Nuclear Information System (INIS)

    El-Sayed, D.; El-Saftawy, A.A.; Abd El Aal, S.A.; Fayez-Hassan, M.; Al-Abyad, M.; Mansour, N.A.; Seddik, U.

    2017-01-01

    Understanding the nature of polymers used as nuclear detectors is crucial to enhance their behaviors. In this work, the induced modifications in wettability and etching properties of Hostaphan and Makrofol polymers irradiated by different fluences of thermal neutrons are investigated. The wetting properties are studied by contact angle technique which showed the spread out of various liquids over the irradiated polymers surfaces (wettability enhanced). This wetting behavior is attributed to the induced changes in surface free energy (SFE), morphology, roughness, structure, hardness, and chemistry. SFE values are calculated by three different models and found to increase after neutrons irradiation associated with differences depending on the used model. These differences result from the intermolecular interactions in the liquid/polymer system. Surface morphology and roughness of both polymers showed drastic changes after irradiation. Additionally, surface structure and hardness of pristine and irradiated polymers were discussed and correlated to the surface wettability improvements. The changes in surface chemistry are examined by Fourier transform infrared spectroscopy (FTIR), which indicate an increase in surface polarity due to the formation of polar groups. The irradiated polymers etching characteristics and activation energies are discussed as well. Lastly, it is evident that thermal neutrons show efficiency in improving surface wettability and etching properties of Hostaphan and Makrofol in a controlled way. - Highlights: • Neutrons radiation used to modify Hostaphan and Makrofol polymer wetting behavior. • Tailoring surface structure, topography and chemistry control its wettability. • Bulk etching rate and activation energy improved after neutrons irradiation.

  10. Shear bond strength of self-etch and total-etch bonding systems at different dentin depths

    Directory of Open Access Journals (Sweden)

    Ana Carolina Maito Villela-Rosa

    2011-04-01

    Full Text Available The purpose of this study was to evaluate the dentin shear bond strength of four adhesive systems (Adper Single Bond 2, Adper Prompt L-Pop, Magic Bond DE and Self Etch Bond in regards to buccal and lingual surfaces and dentin depth. Forty extracted third molars had roots removed and crowns bisected in the mesiodistal direction. The buccal and lingual surfaces were fixed in a PVC/acrylic resin ring and were divided into buccal and lingual groups assigned to each selected adhesive. The same specimens prepared for the evaluation of superficial dentin shear resistance were used to evaluate the different depths of dentin. The specimens were identified and abraded at depths of 0.5, 1.0, 1.5 and 2.0 mm. Each depth was evaluated by ISO TR 11405 using an EMIC-2000 machine regulated at 0.5 mm/min with a 200 Kgf load cell. We performed statistical analyses on the results (ANOVA, Tukey and Scheffé tests. Data revealed statistical differences (p < 0.01 in the adhesive and depth variation as well as adhesive/depth interactions. The Adper Single Bond 2 demonstrated the highest mean values of shear bond strength. The Prompt L-Pop product, a self-etching adhesive, revealed higher mean values compared with Magic Bond DE and Self Etch Bond adhesives, a total and self-etching adhesive respectively. It may be concluded that the shear bond strength of dentin is dependent on material (adhesive system, substrate depth and adhesive/depth interaction.

  11. Studies of the confinement at laser-induced backside dry etching using infrared nanosecond laser pulses

    Science.gov (United States)

    Ehrhardt, M.; Lorenz, P.; Bayer, L.; Han, B.; Zimmer, K.

    2018-01-01

    In the present study, laser-induced backside etching of SiO2 at an interface to an organic material using laser pulses with a wavelength of λ = 1064 nm and a pulse length of τ = 7 ns have been performed in order to investigate selected processes involved in etching of the SiO2 at confined ablation conditions with wavelengths well below the band gap of SiO2. Therefore, in between the utilized metallic absorber layer and the SiO2 surface, a polymer interlayer with a thickness between 20 nm to 150 nm was placed with the aim, to separate the laser absorption process in the metallic absorber layer from the etching process of the SiO2 surface due to the provided organic interlayer. The influence of the confinement of the backside etching process was analyzed by the deposition of different thick polymer layers on top of the metallic absorber layer. In particular, it was found that the SiO2 etching depth decreases with higher polymer interlayer thickness. However, the etching depth increases with increasing the confinement layer thickness. SEM images of the laser processed areas show that the absorber and confinement layers are ruptured from the sample surface without showing melting, and suggesting a lift off process of these films. The driving force for the layers lift off and the etching of the SiO2 is probably the generated laser-induce plasma from the confined ablation that provides the pressure for lift off, the high temperatures and reactive organic species that can chemically attack the SiO2 surface at these conditions.

  12. APEX (Aqueous Photochemistry of Environmentally occurring Xenobiotics): a free software tool to predict the kinetics of photochemical processes in surface waters.

    Science.gov (United States)

    Bodrato, Marco; Vione, Davide

    2014-04-01

    The APEX software predicts the photochemical transformation kinetics of xenobiotics in surface waters as a function of: photoreactivity parameters (direct photolysis quantum yield and second-order reaction rate constants with transient species, namely ˙OH, CO₃(-)˙, (1)O₂ and the triplet states of chromophoric dissolved organic matter, (3)CDOM*), water chemistry (nitrate, nitrite, bicarbonate, carbonate, bromide and dissolved organic carbon, DOC), and water depth (more specifically, the optical path length of sunlight in water). It applies to well-mixed surface water layers, including the epilimnion of stratified lakes, and the output data are average values over the considered water column. Based on intermediate formation yields from the parent compound via the different photochemical pathways, the software can also predict intermediate formation kinetics and overall yield. APEX is based on a photochemical model that has been validated against available field data of pollutant phototransformation, with good agreement between model predictions and field results. The APEX software makes allowance for different levels of knowledge of a photochemical system. For instance, the absorption spectrum of surface water can be used if known, or otherwise it can be modelled from the values of DOC. Also the direct photolysis quantum yield can be entered as a detailed wavelength trend, as a single value (constant or average), or it can be defined as a variable if unknown. APEX is based on the free software Octave. Additional applications are provided within APEX to assess the σ-level uncertainty of the results and the seasonal trend of photochemical processes.

  13. Shear bond strength of self-etch and total-etch bonding systems at different dentin depths

    OpenAIRE

    VILLELA-ROSA, Ana Carolina Maito; GONÇALVES, Mariane; ORSI, Iara Augusta; MIANI, Paola Kirsten

    2011-01-01

    The purpose of this study was to evaluate the dentin shear bond strength of four adhesive systems (Adper Single Bond 2, Adper Prompt L-Pop, Magic Bond DE and Self Etch Bond) in regards to buccal and lingual surfaces and dentin depth. Forty extracted third molars had roots removed and crowns bisected in the mesiodistal direction. The buccal and lingual surfaces were fixed in a PVC/acrylic resin ring and were divided into buccal and lingual groups assigned to each selected adhesive. The same sp...

  14. Surfactant-controlled etching of ion track nanopores and its practical applications in membrane technology

    International Nuclear Information System (INIS)

    Apel, P.Yu.; Blonskaya, I.V.; Dmitriev, S.N.; Mamonova, T.I.; Orelovitch, O.L.; Sartowska, B.; Yamauchi, Yu.

    2008-01-01

    The effect of surfactants on chemical development of ion tracks in polymers has been studied. It has been shown that surface-active agents added to an alkaline etching solution adsorb on the polymer surface at the pore entrances. This reduces the etch rate, which leads to the formation of pores tapered toward the surface. Self-assembly of surfactant molecules at the pore entrance creates a barrier for their penetration into the etched-out nanopores, whereas hydroxide ions diffuse freely. Due to this, the internal pore volume grows faster than the pore surface diameter. The ability to control pore shape is demonstrated with the fabrication of profiled nano- and micropores in polyethylene terephthalate, polycarbonate. Some earlier published data on small track-etched pores in polycarbonate (in particular, the pore diameter vs. etching time curves measured conductometrically) have been revised in light of the above findings. Adding surfactants to chemical etchants makes it possible to optimize the structure of track membranes, thus improving their retention and permeation properties. Asymmetric membranes with thin skin retention layers have been produced and their performance studied

  15. Surfactant-controlled etching of ion track nanopores and its practical applications in membrane technology

    Energy Technology Data Exchange (ETDEWEB)

    Apel, P.Yu. [Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation)], E-mail: apel@nrmail.jinr.ru; Blonskaya, I.V.; Dmitriev, S.N.; Mamonova, T.I.; Orelovitch, O.L. [Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Sartowska, B. [Institute of Nuclear Chemistry and Technology, Dorodna Street 16, 03-195 Warsaw (Poland); Yamauchi, Yu. [Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation)

    2008-08-15

    The effect of surfactants on chemical development of ion tracks in polymers has been studied. It has been shown that surface-active agents added to an alkaline etching solution adsorb on the polymer surface at the pore entrances. This reduces the etch rate, which leads to the formation of pores tapered toward the surface. Self-assembly of surfactant molecules at the pore entrance creates a barrier for their penetration into the etched-out nanopores, whereas hydroxide ions diffuse freely. Due to this, the internal pore volume grows faster than the pore surface diameter. The ability to control pore shape is demonstrated with the fabrication of profiled nano- and micropores in polyethylene terephthalate, polycarbonate. Some earlier published data on small track-etched pores in polycarbonate (in particular, the pore diameter vs. etching time curves measured conductometrically) have been revised in light of the above findings. Adding surfactants to chemical etchants makes it possible to optimize the structure of track membranes, thus improving their retention and permeation properties. Asymmetric membranes with thin skin retention layers have been produced and their performance studied.

  16. Crystallographically tilted and partially strain relaxed GaN grown on inclined (111) facets etched on Si(100) substrate

    International Nuclear Information System (INIS)

    Ansah Antwi, K. K.; Soh, C. B.; Wee, Q.; Tan, Rayson J. N.; Tan, H. R.; Yang, P.; Sun, L. F.; Shen, Z. X.; Chua, S. J.

    2013-01-01

    High resolution X-ray diffractometry (HR-XRD), Photoluminescence, Raman spectroscopy, and Transmission electron microscope measurements are reported for GaN deposited on a conventional Si(111) substrate and on the (111) facets etched on a Si(100) substrate. HR-XRD reciprocal space mappings showed that the GaN(0002) plane is tilted by about 0.63° ± 0.02° away from the exposed Si(111) growth surface for GaN deposited on the patterned Si(100) substrate, while no observable tilt existed between the GaN(0002) and Si(111) planes for GaN deposited on the conventional Si(111) substrate. The ratio of integrated intensities of the yellow to near band edge (NBE) luminescence (I YL /I NBE ) was determined to be about one order of magnitude lower in the case of GaN deposited on the patterned Si(100) substrate compared with GaN deposited on the conventional Si(111) substrate. The Raman E 2 (high) optical phonon mode at 565.224 ± 0.001 cm −1 with a narrow full width at half maximum of 1.526 ± 0.002 cm −1 was measured, for GaN deposited on the patterned Si(100) indicating high material quality. GaN deposition within the trench etched on the Si(100) substrate occurred via diffusion and mass-transport limited mechanism. This resulted in a differential GaN layer thickness from the top (i.e., 1.8 μm) of the trench to the bottom (i.e., 0.3 μm) of the trench. Mixed-type dislocation constituted about 80% of the total dislocations in the GaN grown on the inclined Si(111) surface etched on Si(100)

  17. Erbium doped stain etched porous silicon

    International Nuclear Information System (INIS)

    Gonzalez-Diaz, B.; Diaz-Herrera, B.; Guerrero-Lemus, R.; Mendez-Ramos, J.; Rodriguez, V.D.; Hernandez-Rodriguez, C.; Martinez-Duart, J.M.

    2008-01-01

    In this work a simple erbium doping process applied to stain etched porous silicon layers (PSLs) is proposed. This doping process has been developed for application in porous silicon solar cells, where conventional erbium doping processes are not affordable because of the high processing cost and technical difficulties. The PSLs were formed by immersion in a HF/HNO 3 solution to properly adjust the porosity and pore thickness to an optimal doping of the porous structure. After the formation of the porous structure, the PSLs were analyzed by means of nitrogen BET (Brunauer, Emmett and Teller) area measurements and scanning electron microscopy. Subsequently, the PSLs were immersed in a saturated erbium nitrate solution in order to cover the porous surface. Then, the samples were subjected to a thermal process to activate the Er 3+ ions. Different temperatures and annealing times were used in this process. The photoluminescence of the PSLs was evaluated before and after the doping processes and the composition was analyzed by Fourier transform IR spectroscopy

  18. Specific binding of a naturally occurring amyloidogenic fragment of Streptococcus mutans adhesin P1 to intact P1 on the cell surface characterized by solid state NMR spectroscopy.

    Science.gov (United States)

    Tang, Wenxing; Bhatt, Avni; Smith, Adam N; Crowley, Paula J; Brady, L Jeannine; Long, Joanna R

    2016-02-01

    The P1 adhesin (aka Antigen I/II or PAc) of the cariogenic bacterium Streptococcus mutans is a cell surface-localized protein involved in sucrose-independent adhesion and colonization of the tooth surface. The immunoreactive and adhesive properties of S. mutans suggest an unusual functional quaternary ultrastructure comprised of intact P1 covalently attached to the cell wall and interacting with non-covalently associated proteolytic fragments thereof, particularly the ~57-kDa C-terminal fragment C123 previously identified as Antigen II. S. mutans is capable of amyloid formation when grown in a biofilm and P1 is among its amyloidogenic proteins. The C123 fragment of P1 readily forms amyloid fibers in vitro suggesting it may play a role in the formation of functional amyloid during biofilm development. Using wild-type and P1-deficient strains of S. mutans, we demonstrate that solid state NMR (ssNMR) spectroscopy can be used to (1) globally characterize cell walls isolated from a Gram-positive bacterium and (2) characterize the specific binding of heterologously expressed, isotopically-enriched C123 to cell wall-anchored P1. Our results lay the groundwork for future high-resolution characterization of the C123/P1 ultrastructure and subsequent steps in biofilm formation via ssNMR spectroscopy, and they support an emerging model of S. mutans colonization whereby quaternary P1-C123 interactions confer adhesive properties important to binding to immobilized human salivary agglutinin.

  19. Specific binding of a naturally occurring amyloidogenic fragment of Streptococcus mutans adhesin P1 to intact P1 on the cell surface characterized by solid state NMR spectroscopy

    International Nuclear Information System (INIS)

    Tang, Wenxing; Bhatt, Avni; Smith, Adam N.; Crowley, Paula J.; Brady, L. Jeannine; Long, Joanna R.

    2016-01-01

    The P1 adhesin (aka Antigen I/II or PAc) of the cariogenic bacterium Streptococcus mutans is a cell surface-localized protein involved in sucrose-independent adhesion and colonization of the tooth surface. The immunoreactive and adhesive properties of S. mutans suggest an unusual functional quaternary ultrastructure comprised of intact P1 covalently attached to the cell wall and interacting with non-covalently associated proteolytic fragments thereof, particularly the ∼57-kDa C-terminal fragment C123 previously identified as Antigen II. S. mutans is capable of amyloid formation when grown in a biofilm and P1 is among its amyloidogenic proteins. The C123 fragment of P1 readily forms amyloid fibers in vitro suggesting it may play a role in the formation of functional amyloid during biofilm development. Using wild-type and P1-deficient strains of S. mutans, we demonstrate that solid state NMR (ssNMR) spectroscopy can be used to (1) globally characterize cell walls isolated from a Gram-positive bacterium and (2) characterize the specific binding of heterologously expressed, isotopically-enriched C123 to cell wall-anchored P1. Our results lay the groundwork for future high-resolution characterization of the C123/P1 ultrastructure and subsequent steps in biofilm formation via ssNMR spectroscopy, and they support an emerging model of S. mutans colonization whereby quaternary P1-C123 interactions confer adhesive properties important to binding to immobilized human salivary agglutinin

  20. Specific binding of a naturally occurring amyloidogenic fragment of Streptococcus mutans adhesin P1 to intact P1 on the cell surface characterized by solid state NMR spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Wenxing; Bhatt, Avni [University of Florida, Department of Biochemistry and Molecular Biology, College of Medicine (United States); Smith, Adam N. [University of Florida, Department of Chemistry, College of Liberal Arts and Sciences (United States); Crowley, Paula J.; Brady, L. Jeannine, E-mail: jbrady@dental.ufl.edu [University of Florida, Department of Oral Biology, College of Dentistry (United States); Long, Joanna R., E-mail: jrlong@ufl.edu [University of Florida, Department of Biochemistry and Molecular Biology, College of Medicine (United States)

    2016-02-15

    The P1 adhesin (aka Antigen I/II or PAc) of the cariogenic bacterium Streptococcus mutans is a cell surface-localized protein involved in sucrose-independent adhesion and colonization of the tooth surface. The immunoreactive and adhesive properties of S. mutans suggest an unusual functional quaternary ultrastructure comprised of intact P1 covalently attached to the cell wall and interacting with non-covalently associated proteolytic fragments thereof, particularly the ∼57-kDa C-terminal fragment C123 previously identified as Antigen II. S. mutans is capable of amyloid formation when grown in a biofilm and P1 is among its amyloidogenic proteins. The C123 fragment of P1 readily forms amyloid fibers in vitro suggesting it may play a role in the formation of functional amyloid during biofilm development. Using wild-type and P1-deficient strains of S. mutans, we demonstrate that solid state NMR (ssNMR) spectroscopy can be used to (1) globally characterize cell walls isolated from a Gram-positive bacterium and (2) characterize the specific binding of heterologously expressed, isotopically-enriched C123 to cell wall-anchored P1. Our results lay the groundwork for future high-resolution characterization of the C123/P1 ultrastructure and subsequent steps in biofilm formation via ssNMR spectroscopy, and they support an emerging model of S. mutans colonization whereby quaternary P1-C123 interactions confer adhesive properties important to binding to immobilized human salivary agglutinin.

  1. Comparison of shear bond strength of self-etch and self-adhesive cements bonded to lithium disilicate, enamel and dentin.

    Science.gov (United States)

    Naranjo, Jennifer; Ali, Mohsin; Belles, Donald

    2015-11-01

    Comparison of shear bond strength of self-etch and self-adhesive cements bonded to lithium disilicate, enamel and dentin. With several self-adhesive resin cements currently available, there is confusion about which product and technique is optimal for bonding ceramic restorations to teeth. The objective of this study was to compare the shear bond strength of lithium disilicate cemented to enamel and dentin using 5 adhesive cements. 100 lithium disilicate rods were pretreated with 5% hydrofluoric acid, silane, and cemented to 50 enamel and 50 dentin surfaces using five test cements: Variolink II (etch-and-rinse) control group, Clearfil Esthetic (two step self-etch), RelyX Unicem, SpeedCEM, and BifixSE (self-adhesive). All specimens were stored (37 degrees C, 100% humidity) for 24 hours before testing their shear bond strength using a universal testing machine (Instron). Debonded surfaces were observed under a low-power microscope to assess the location and type of failure. The highest bond strength for both enamel and dentin were recorded for Variolink II, 15.1MPa and 20.4MPa respectively, and the lowest were recorded for BifixSE, 0.6MPa and 0.9MPa respectively. Generally, higher bond strengths were found for dentin (7.4MPa) than enamel (5.3MPa). Tukey's post hoc test showed no significant difference between Clearfil Esthetic and SpeedCem (p = 0.059), Unicem and SpeedCem (p = 0.88), and Unicem and BifixSE (p = 0.092). All cements bonded better to lithium disilicate than to enamel or dentin, as all bond failures occurred at the tooth/adhesive interface except for Variolink II. Bond strengths recorded for self-adhesive cements were very low compared to the control "etch and rinse" and self-etch systems. Further improvements are apparently needed in self-adhesive cements for them to replace multistep adhesive systems. The use of conventional etch and rinse cements such as Veriolink II should be preferred for cementing all ceramic restorations over self-adhesive cements

  2. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  3. Atomistic simulations of graphite etching at realistic time scales.

    Science.gov (United States)

    Aussems, D U B; Bal, K M; Morgan, T W; van de Sanden, M C M; Neyts, E C

    2017-10-01

    Hydrogen-graphite interactions are relevant to a wide variety of applications, ranging from astrophysics to fusion devices and nano-electronics. In order to shed light on these interactions, atomistic simulation using Molecular Dynamics (MD) has been shown to be an invaluable tool. It suffers, however, from severe time-scale limitations. In this work we apply the recently developed Collective Variable-Driven Hyperdynamics (CVHD) method to hydrogen etching of graphite for varying inter-impact times up to a realistic value of 1 ms, which corresponds to a flux of ∼10 20 m -2 s -1 . The results show that the erosion yield, hydrogen surface coverage and species distribution are significantly affected by the time between impacts. This can be explained by the higher probability of C-C bond breaking due to the prolonged exposure to thermal stress and the subsequent transition from ion- to thermal-induced etching. This latter regime of thermal-induced etching - chemical erosion - is here accessed for the first time using atomistic simulations. In conclusion, this study demonstrates that accounting for long time-scales significantly affects ion bombardment simulations and should not be neglected in a wide range of conditions, in contrast to what is typically assumed.

  4. Constructing metal-based structures on nanopatterned etched silicon.

    Science.gov (United States)

    Zhang, Xiaojiang; Qiao, Yinghong; Xu, Lina; Buriak, Jillian M

    2011-06-28

    Silicon surfaces with nanoscale etched patterns were obtained using polystyrene-block-poly(4-vinylpyridine) (PS-b-P4VP) block copolymer films as templates, followed by brief immersion in HF(aq). The resulting interfaces were comprised of pseudohexagonal arrays of pits on the silicon, whose shapes depended upon the chosen silicon orientation. The top unetched face of silicon remains capped by the native oxide, and the pit interiors are terminated by Si-H(x). Selective chemical functionalization via these two chemical handles was demonstrated to be a viable approach toward building nanostructured metal oxide and metal features within these silicon pits and on the top face. Using a series of interfacial chemical reactions, including oxidation (of Si-H(x)-terminated regions), hydrosilylation, and alkoxysilane-based chemistry on silicon oxide, the growth of metal-based structures can be spatially controlled. In the first approach, titania nanobowls were grown within the etch pits, and in the second, galvanic displacement was used to produce gold nanoparticles either within the etch pits, on the top silicon face, or both.

  5. Pattern inspection of etched multilayer extreme ultraviolet mask

    Science.gov (United States)

    Iida, Susumu; Hirano, Ryoichi; Amano, Tsuyoshi; Watanabe, Hidehiro

    2016-04-01

    Patterned mask inspection for an etched multilayer (ML) extreme ultraviolet mask was investigated. In order to optimize the mask structure from the standpoint of a pattern inspection the mask structure not only from the standpoint of a pattern inspection by using a projection electron microscope but also by using a projection electron microscope but also by considering the other fabrication processes using electron beam techniques such as critical dimension metrology and mask repair, we employed a conductive layer between the ML and substrate. By measuring the secondary electron emission coefficients of the candidate materials for the conductive layer, we evaluated the image contrast and the influence of the charging effect. In the cases of 40-pair ML, 16-nm-sized extrusion and intrusion defects were found to be detectable more than 10 sigma in half pitch 44, 40, and 32 nm line-and-space patterns. Reducing 40-pair ML to 20-pair ML degraded the image contrast and the defect detectability. However, by selecting B4C as a conductive layer, 16-nm-sized defects and etching residues remained detectable. The 16-nm-sized defects were also detected after the etched part was refilled with Si. A double-layer structure with 2.5-nm-thick B4C on metal film used as a conductive layer was found to have sufficient conductivity and also was found to be free from the surface charging effect and influence of native oxide.

  6. The Langmuir isotherm and the standard model of ion-assisted etching

    International Nuclear Information System (INIS)

    Lieberman, M A

    2009-01-01

    Langmuir is lured to the General Electric Research Laboratory, where he creates a new science-surface chemistry-and christens another-plasma. His atomistic views of gas-surface interactions are extended 65 years later to describe ion-assisted plasma etching, an indispensable process in modern semiconductor device manufacturing.

  7. Etching characteristics of a CR-39 track detector at room temperature in different etching solutions

    International Nuclear Information System (INIS)

    Dajko, G.

    1991-01-01

    Investigations were carried out to discover how the etching characteristics of CR-39 detectors change with varying conditions of the etching process. Measurements were made at room temperature in pure NaOH and KOH solutions; in different alcoholic KOH solutions (PEW solution, i.e. potassium hydroxide, ethyl alcohol, water); and in NaOH and KOH solutions containing different additives. The bulk etching rate of the detector (V B ) and the V (= V T /V B ) function, i.e. track to bulk etch rates ratio, for 6.1 MeV α-particles, were measured systematically. (author)

  8. Effect of phosphoric acid etching on the shear bond strength of two self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Camila SABATINI

    2013-01-01

    Full Text Available Objective To evaluate the effect of optional phosphoric acid etching on the shear bond strength (SBS of two self-etch adhesives to enamel and dentin. Material and Methods Ninety-six bovine mandibular incisors were ground flat to obtain enamel and dentin substrates. A two-step self-etch adhesive (FL-Bond II and a one-step self-etch adhesive (BeautiBond were applied with and without a preliminary acid etching to both the enamel and dentin. The specimens were equally and randomly assigned to 4 groups per substrate (n=12 as follows: FL-Bond II etched; FL-Bond II un-etched; BeautiBond etched; BeautiBond un-etched. Composite cylinders (Filtek Z100 were bonded onto the treated tooth structure. The shear bond strength was evaluated after 24 hours of storage (37°C, 100% humidity with a testing machine (Ultra-tester at a speed of 1 mm/min. The data was analyzed using a two-way ANOVA and post-hoc Tukey's test with a significance level of p<0.05. A field emission scanning electron microscope was used for the failure mode analysis. Results Both adhesives evidenced a significant decrease in the dentin SBS with the use of an optional phosphoric acid-etching step (p<0.05. Preliminary phosphoric acid etching yielded significantly higher enamel SBS for FL-Bond II (p<0.05 only, but not for BeautiBond. FL-Bond II applied to un-etched dentin demonstrated the highest mean bond strength (37.7±3.2 MPa and BeautiBond applied to etched dentin showed the lowest mean bond strength (18.3±6.7 MPa among all tested groups (p<0.05. Conclusion The use of a preliminary acid-etching step with 37.5% phosphoric acid had a significant adverse effect on the dentin bond strength of the self-etch adhesives evaluated while providing improvement on the enamel bond strength only for FL-Bond II. This suggests that the potential benefit that may be derived from an additional etching step with phosphoric acid does not justify the risk of adversely affecting the bond strength to dentin.

  9. Plasma/Neutral-Beam Etching Apparatus

    Science.gov (United States)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  10. Effect of chemical etching on the Cu/Ni metallization of poly (ether ether ketone)/carbon fiber composites

    International Nuclear Information System (INIS)

    Di Lizhi; Liu Bin; Song Jianjing; Shan Dan; Yang Dean

    2011-01-01

    Poly(ether ether ketone)/carbon fiber composites (PEEK/Cf) were chemical etched by Cr 2 O 3 /H 2 SO 4 solution, electroless plated with copper and then electroplated with nickel. The effects of chemical etching time and temperature on the adhesive strength between PEEK/Cf and Cu/Ni layers were studied by thermal shock method. The electrical resistance of some samples was measured. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface composition and functional groups. Scanning electron microscopy (SEM) was performed to observe the surface morphology of the composite, the chemical etched sample, the plated sample and the peeled metal layer. The results indicated that C=O bond increased after chemical etching. With the increasing of etching temperature and time, more and more cracks and partially exposed carbon fibers appeared at the surface of PEEK/Cf composites, and the adhesive strength increased consequently. When the composites were etched at 60 deg. C for 25 min and at 70-80 deg. C for more than 15 min, the Cu/Ni metallization layer could withstand four thermal shock cycles without bubbling, and the electrical resistivity of the metal layer of these samples increased with the increasing of etching temperature and time.

  11. Effect of chemical etching on the Cu/Ni metallization of poly (ether ether ketone)/carbon fiber composites

    Energy Technology Data Exchange (ETDEWEB)

    Di Lizhi; Liu Bin [Tianjin Medical College, Tianjin 300222 (China); Song Jianjing; Shan Dan [School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China); Yang Dean, E-mail: dayang@tju.edu.cn [School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China)

    2011-02-15

    Poly(ether ether ketone)/carbon fiber composites (PEEK/Cf) were chemical etched by Cr{sub 2}O{sub 3}/H{sub 2}SO{sub 4} solution, electroless plated with copper and then electroplated with nickel. The effects of chemical etching time and temperature on the adhesive strength between PEEK/Cf and Cu/Ni layers were studied by thermal shock method. The electrical resistance of some samples was measured. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface composition and functional groups. Scanning electron microscopy (SEM) was performed to observe the surface morphology of the composite, the chemical etched sample, the plated sample and the peeled metal layer. The results indicated that C=O bond increased after chemical etching. With the increasing of etching temperature and time, more and more cracks and partially exposed carbon fibers appeared at the surface of PEEK/Cf composites, and the adhesive strength increased consequently. When the composites were etched at 60 deg. C for 25 min and at 70-80 deg. C for more than 15 min, the Cu/Ni metallization layer could withstand four thermal shock cycles without bubbling, and the electrical resistivity of the metal layer of these samples increased with the increasing of etching temperature and time.

  12. Etching and anti-etching strategy for sensitive colorimetric sensing of H2O2 and biothiols based on silver/carbon nanomaterial.

    Science.gov (United States)

    Hou, Wenli; Liu, Xiaoying; Lu, Qiujun; Liu, Meiling; Zhang, Youyu; Yao, Shouzhuo

    2018-02-01

    In this paper, the colorimetric sensing of H 2 O 2 related molecules and biothiols based on etching and anti-etching strategy was firstly proposed. Ag/carbon nanocomposite (Ag/C NC) was served as the sensing nanoprobe, which was synthesized via carbon dots (C-dots) as the reductant and stabilizer. The characteristic surface plasmon resonance (SPR) absorbance of Ag nanoparticles (AgNPs) was sensitive to the amount of hydrogen peroxide (H 2 O 2 ). It exhibited strong optical responses to H 2 O 2 with the solution colour changing from yellow to nearly colourless, which is resulted from the etching of Ag by H 2 O 2 . The sensing platform was further extended to detect H 2 O 2 related molecules such as lactate in coupling with the specific catalysis oxidation of L-lactate by lactate oxidase (LOx) and formation of H 2 O 2 . It provides wide linear range for detecting H 2 O 2 in 0.1-80μM and 80-220μM with the detection limit as low as 0.03μM (S/N=3). In the presence of biothiols, the etching from the H 2 O 2 can be hampered. Other biothiols exhibit anti-etching effects well. The strategy works well in detecting of typical biothiols including cysteine (Cys), homocysteine (Hcy) and glutathione (GSH). Thus, a simple colorimetric strategy for sensitive detection of H 2 O 2 and biothiols is proposed. It is believed that the colorimetric sensor based on etching and anti-etching strategy can be applied in other systems in chemical and biosensing areas. Copyright © 2017 Elsevier B.V. All rights reserved.

  13. Mineralization of collagen may occur on fibril surfaces: evidence from conventional and high-voltage electron microscopy and three-dimensional imaging

    Science.gov (United States)

    Landis, W. J.; Hodgens, K. J.; Song, M. J.; Arena, J.; Kiyonaga, S.; Marko, M.; Owen, C.; McEwen, B. F.

    1996-01-01

    The interaction between collagen and mineral crystals in the normally calcifying leg tendons from the domestic turkey, Meleagris gallopavo, has been investigated at an ultrastructural level with conventional and high-voltage electron microscopy, computed tomography, and three-dimensional image reconstruction methods. Specimens treated by either aqueous or anhydrous techniques and resin-embedded were appropriately sectioned and regions of early tendon mineralization were photographed. On the basis of individual photomicrographs, stereoscopic pairs of images, and tomographic three-dimensional image reconstructions, platelet-shaped crystals may be demonstrated for the first time in association with the surface of collagen fibrils. Mineral is also observed in closely parallel arrays within collagen hole and overlap zones. The mineral deposition at these spatially distinct locations in the tendon provides insight into possible means by which calcification is mediated by collagen as a fundamental event in skeletal and dental formation among vertebrates.

  14. Separated Type Atmospheric Pressure Plasma Microjets Array for Maskless Microscale Etching

    Directory of Open Access Journals (Sweden)

    Yichuan Dai

    2017-06-01

    Full Text Available Maskless etching approaches such as microdischarges and atmospheric pressure plasma jets (APPJs have been studied recently. Nonetheless, a simple, long lifetime, and efficient maskless etching method is still a challenge. In this work, a separated type maskless etching system based on atmospheric pressure He/O2 plasma jet and microfabricated Micro Electro Mechanical Systems (MEMS nozzle have been developed with advantages of simple-structure, flexibility, and parallel processing capacity. The plasma was generated in the glass tube, forming the micron level plasma jet between the nozzle and the surface of polymer. The plasma microjet was capable of removing photoresist without masks since it contains oxygen reactive species verified by spectra measurement. The experimental results illustrated that different features of microholes etched by plasma microjet could be achieved by controlling the distance between the nozzle and the substrate, additive oxygen ratio, and etch time, the result of which is consistent with the analysis result of plasma spectra. In addition, a parallel etching process was also realized by plasma microjets array.

  15. Structuring of DLC:Ag nanocomposite thin films employing plasma chemical etching and ion sputtering

    Science.gov (United States)

    Tamulevičius, Tomas; Tamulevičienė, Asta; Virganavičius, Dainius; Vasiliauskas, Andrius; Kopustinskas, Vitoldas; Meškinis, Šarūnas; Tamulevičius, Sigitas

    2014-12-01

    We analyze structuring effects of diamond like carbon based silver nanocomposite (DLC:Ag) thin films by CF4/O2 plasma chemical etching and Ar+ sputtering. DLC:Ag films were deposited employing unbalanced reactive magnetron sputtering of silver target with Ar+ in C2H2 gas atmosphere. Films with different silver content (0.6-12.9 at.%) were analyzed. The films (as deposited and exposed to plasma chemical etching) were characterized employing scanning electron microscopy and energy dispersive X-ray analysis (SEM/EDS), optical microscopy, ultraviolet-visible light (UV-VIS) spectroscopy and Fourier transform infrared (FTIR) spectroscopy. After deposition, the films were plasma chemically etched in CF4/O2 mixture plasma for 2-6 min. It is shown that optical properties of thin films and silver nano particle size distribution can be tailored during deposition changing the magnetron current and C2H2/Ar ratio or during following plasma chemical etching. The plasma etching enabled to reveal the silver filler particle size distribution and to control silver content on the surface that was found to be dependent on Ostwald ripening process of silver nano-clusters. Employing contact lithography and 4 μm period mask in photoresist or aluminum the films were patterned employing CF4/O2 mixture plasma chemical etching, direct Ar+ sputtering or combined etching processes. It is shown that different processing recipes result in different final grating structures. Selective carbon etching in CF4/O2 gas mixture with photoresist mask revealed micrometer range lines of silver nanoparticles, while Ar+ sputtering and combined processing employing aluminum mask resulted in nanocomposite material (DLC:Ag) micropatterns.

  16. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF{sub 6} based plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Perros, Alexander; Bosund, Markus; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, Lauri; Huhtio, Teppo; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 Aalto (Finland); Department of Physics, University of Jyvaeskylae, P.O. Box 35, 40014, Jyvaeskylae,Finland (Finland); Department of Micro and Nanosciences, School of Electrical Engineering, Aalto University, P.O. Box 13500, FI-00076, Aalto (Finland)

    2012-01-15

    The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 deg. C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF{sub 6} and O{sub 2} under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film's removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SF{sub x}{sup +} and O{sup +} chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF{sub 6} based plasma etch applications, such as through-wafer etching, or when oxide films are not suitable.

  17. Microleakage of Total-etch and Self-etch adhesives in class V composite cavities

    Directory of Open Access Journals (Sweden)

    Farzin Ebrahimi Sh

    2011-02-01

    Full Text Available "nBackground and Aims: This ex vivo study was done to evaluate the effect of different adhesive systems on microleakage of class V composite restorations."nMaterials and Methods: Thirty extracted human third molar teeth were selected and class V cavities were prepared (3×3×1.5 mm on buccal and lingual surfaces. Then, teeth were divided into 3 groups. Adhesives used in this study were Excite (Ivoclar/Vivadent, AdheSE(Ivoclar/Vivadent and AdheSE-one Ivoclar (Vivadent/Vivadent. After application of adhesives, cavities were restored with a resine composite (InTen-S A1/ Ivoclar, in 3 increments and cured with QTH light curing unit (700 mW/cm. After 24 hours storage of teeth in 370C water, teeth were thermocycled (500 cycles in 5-550C and stored in 1% basic fushin for 24 hours. After that, the specimens were rinsed with running water and mounted in a self-cured acryl. Finally, the specimens were sectioned and maximum depth of dye penetration for each restoration was measured using stereomicroscopy. The results were statistically analyzed with Mann-Whitney U test."nResults: In comparison between enamel and dentin margins in each group, microleakage in enamel margins were less than that of dentin margins. This difference was statistically significant in Excite and AdheSE-one groups (P=0.001, P=0.043. AdheSE showed the least microleakage in dentin margins; however, there was no significant difference between 3 bonding agents (P=0.14. In enamel margins, there were significant differences between 3 bonding agents (P=0.001. Excite showed the lowest microleakage and AdheSE-one had the highest microleakage."nConclusion: The least enamel microleakage was associated with the total-etch and least dentin microleakage was observed in the two-step self-etch adhesive system.

  18. Selectivity on Etching: Creation of High-Energy Facets on Copper Nanocrystals for CO2 Electrochemical Reduction.

    Science.gov (United States)

    Wang, Zhenni; Yang, Guang; Zhang, Zhaorui; Jin, Mingshang; Yin, Yadong

    2016-04-26

    Creating high-energy facets on the surface of catalyst nanocrystals represents a promising method for enhancing their catalytic activity. Herein we show that crystal etching as the reverse process of crystal growth can directly endow nanocrystal surfaces with high-energy facets. The key is to avoid significant modification of the surface energies of the nanocrystal facets by capping effects from solvents, ions, and ligands. Using Cu nanocubes as the starting material, we have successfully demonstrated the creation of high-energy facets in metal nanocrystals by controlled chemical etching. The etched Cu nanocrystals with enriched high-energy {110} facets showed significantly enhanced activity toward CO2 reduction. We believe the etching-based strategy could be extended to the synthesis of nanocrystals of many other catalysts with more active high-energy facets.

  19. Enamel deproteinization before acid etching--a scanning electron microscopic observation.

    Science.gov (United States)

    Ahuja, Bhoomika; Yeluri, Ramakrishna; Baliga, Sudhindra; Munshi, A K

    2010-01-01

    This study was undertaken to evaluate the topographical features of enamel surface deproteinized with sodium hypochlorite (NaOCl) and etched with phosphoric acid (H3PO4) compared to phosphoric acid alone using Scanning Electron Microscopic (SEM) Analysis. 30 enamel blocks of 1 mm2 from ten human sound extracted permanent molars were obtained and treated as under: Group 1 (10 blocks): Enamel surface was etched with 37% H3PO4 gel for 15 seconds. Group 2 (10 blocks): Enamel surface was treated with 5.25% NaOCl for 60 seconds and then etched with 37% H3PO4 gel for 15 seconds. 10 enamel blocks were included in the control group where no treatment was carried out. The samples were subjected to SEM analysis and 5 microphotographs of each sample were obtained at 500X magnification and evaluated for the quality of etching pattern of the enamel in percentage (%) using Auto-CAD 2007 software. Mean values of etching pattern in Group 1 being 55.76% and Group 2 being 53.58%. No significant difference was observed between the two groups. The use of 37% phosphoric acid for 15 seconds still remains the best method for pretreatment of enamel.

  20. Radiological control in a mine with a naturally-occurring radioactive material -NORM: III assessment of removable surface contamination in a pilot plant

    Energy Technology Data Exchange (ETDEWEB)

    Pereira, W.S.; Py Junior, D.A.; Silva, A.C.A.; Garcia Filho, O., E-mail: pereiraws@gmail.com [Industrias Nucleares do Brasil (INB), Pocos de Caldas, MG (Brazil). Unidade de Tratamento de Minerio. Grupo Multidisciplinar de Radioprotecao; Kelecom, A., E-mail: akelecom@id.uff.br [Universidade Federal Fluminense (GETA/LARARA-PLS/UFF), Niteroi, RJ, (Brazil). Grupo de Estudos em Temas Ambientais. Lab. de Radiobiologia e Radiometria; Pereira, J.R.S., E-mail: pereirarsj@gmail.com [Universidade Federal de Alfenas (UNIFAL), Pocos de Caldas, MG (Brazil)

    2013-07-01

    Ore Treatment Unit (OUT) possesses a process laboratory. Considering the uranium ore processing, this laboratory works in close cooperation with the Radiation Protection Service of the Unit. In the year of 2009 a pilot plant for the development of solvent uranium extraction from the phosphate ore of the mine of Santa Quiteria city, in Ceara State, Brazil was developed. In this kind of plant the surface contamination may cause contamination for Occupational Exposed Individuals (OEI). In order to control this kind of contamination and offer a safety work's condition for OEIs, a monitoring program of transferable contamination using swab samples was developed. 162 swabs were made. For the alpha emitters the monitoring results varied from 0.001 Bq cm{sup -2} to 0.014 Bq cm{sup -2}, with average value of 0.002 Bq cm{sup -2}. For beta emitters the results varied from 0.010 Bq cm{sup -2} to 0.031 Bq cm{sup -2} with average equal to 0.011 Bq cm{sup -2}. For alpha emitters, 87.65 % of the results were below 0.004 Bq cm{sup -2}, values that are one order of magnitude smaller than the limit and the maximum value stayed in 35 % of the limit for an object to be considered contaminated. For beta emitters, 90 % of the results were below 0.010 Bq cm{sup -2} that corresponds to 25 % of the limit and 100 % were below 0.031 Bq cm{sup -2} below the limit for an object to be considered contaminated. In both cases any object monitored during the operation, was not considered contaminated, proving the good practices employed in the laboratory, resultant of the good planning of the Radiation Protection Service for the operations' process. (author)

  1. Formation of biaxial texture in metal films by selective ion beam etching

    Energy Technology Data Exchange (ETDEWEB)

    Park, S.J. [Department of Materials Science and Engineering, University of Florida, 106 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611 (United States); Norton, D.P. [Department of Materials Science and Engineering, University of Florida, 106 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611 (United States)]. E-mail: dnort@mse.ufl.edu; Selvamanickam, Venkat [IGC-SuperPower, LLC, 450 Duane Avenue, Schenectady, NY 12304 (United States)

    2006-05-15

    The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature.

  2. Formation of biaxial texture in metal films by selective ion beam etching

    International Nuclear Information System (INIS)

    Park, S.J.; Norton, D.P.; Selvamanickam, Venkat

    2006-01-01

    The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature

  3. Analysis of GaN etching damage by capacitively coupled RF Ar plasma exposure

    International Nuclear Information System (INIS)

    Kawakami, Retsuo; Inaoka, Takeshi; Minamoto, Shingo; Kikuhara, Yasuyuki

    2008-01-01

    GaN etching damage by capacitively-coupled RF Ar plasma exposure is significantly dependent on gas pressure and exposure time. At a low gas pressure (10 mTorr), the N/Ga ratio decreases by the physical etching effect with increasing exposure time, while the GaN surface morphology is smooth. At a high gas pressure (50 mTorr), there are other effects such as UV radiation, by which the GaN surface morphology becomes rough as the exposure time increases from ∼ 60 min

  4. Dentin-smear remains at self-etch adhesive interface.

    Science.gov (United States)

    Mine, Atsushi; De Munck, Jan; Cardoso, Marcio Vivan; Van Landuyt, Kirsten L; Poitevin, André; Van Ende, Annelies; Matsumoto, Mariko; Yoshida, Yasuhiro; Kuboki, Takuo; Yatani, Hirofumi; Van Meerbeek, Bart

    2014-10-01

    The bonding potential of 'mild' self-etch adhesives may be compromised due to smear interference, as they may not dissolve/penetrate the smear layer effectively due to their relatively low acidity. We observed that the thickness of the dentin smear layer differed depending on the surface-preparation methodology used. The interaction of an (ultra-)mild self-etch adhesive (Clearfil S3 Bond, Kuraray Noritake) with human dentin, prepared either using a medium-grit diamond bur ('thick', clinically relevant smear layer) or 600-grit SiC-paper ('thin' smear layer), or just fractured (smear-free), was evaluated using high-resolution transmission electron microscopy (TEM). Non-demineralized/demineralized 30-100nm interfacial cross-sections were prepared following common TEM-specimen processing and diamond-knife ultra-microtomy. The adhesive did not dissolve the bur-cut, nor the SiC-ground smear layer, but impregnated it. Within this 'resin-smear complex', hydroxyapatite was abundantly present. At fractured dentin, this complex was not present, while the actual layer of interaction of the adhesive was limited to about 100nm. Non-demineralized 'ultra-thin' (30-50nm) sections confirmed the interfacial ultra-structure to differ for the three surface-preparation methods. An electron dense band was consistently disclosed at the adhesive interface, most likely representing the documented chemical interaction of the functional monomer 10-MDP with Ca. The dentin surface-preparation method significantly affects the nature of the smear layer and the interaction with the ultra-mild self-etch adhesive. Copyright © 2014 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

  5. Anisotropic etching of silicon for application in micro machine using plasma of SF{sub 6}/CH{sub 4}/O{sub 2}/Ar and SF{sub 6}/CF{sub 4}/O{sub 2}/Ar; Grabado anisotropico de silicio para aplicacion en micromaquinado usando plasmas de SF{sub 6}/CH{sub 4}/O{sub 2}/Ar y SF{sub 6}/CF{sub 4}/O{sub 2}/Ar

    Energy Technology Data Exchange (ETDEWEB)

    Reyes B, C. [Instituto Nacional de Astrofisica, Optica y Electronica, A.P. 51, 72000 Puebla (Mexico); Moshkalyov, S.A.; Swart, J.W. [Centro de Componentes Semiconductores, UNICAMP, 6061 CEP. 13083-970, Campinas, Sao Paulo (Brazil)]. e-mail: creyes@inaoep.mx

    2004-07-01

    We investigated the reactive ion etching of silicon using SF{sub 6}/CH{sub 4}(CF{sub 4})/O{sub 2}/Ar gas mixtures containing fluorine for MEMS applications. Etch rates and anisotropy of etch profiles were examined as a function of gas composition, material of electrode, and RF power. Etch depths were measured using a profilometers, and etch profiles were analyzed by scanning electron microscope. As a mask material, an aluminium film deposited by evaporation, was used. High anisotropy of etching of 0.95 was achieved at etch depths up to 20-30 micrometers and etch rates of approximately 0.3-0.6 {mu}m/min. Highly anisotropic etching is based on a mechanism that enhance the ion bombarding and protects the sidewalls due to polymerization and/or oxidation mechanisms in order to avoid the lateral etch. However, under the anisotropic etching conditions, considerable damages of the etched surfaces (roughness formation), were observed. After etching experiments, wet / dry cleaning procedures were applied to remove surface residues resulting from the reactive ion etching and to improve the etched surface morphology. (Author)

  6. Effect of pre-etching enamel on fatigue of self-etch adhesive bonds

    NARCIS (Netherlands)

    Erickson, R.L.; de Gee, A.J.; Feilzer, A.J.

    2008-01-01

    Objective. A previous study found that the shear bond strength (SBS) to bovine enamel for the self-etching adhesive Adper Prompt-L-Pop (PLP) was 75% of that found with the etch-and-rinse material SingleBond, while the comparative value for the shear fatigue limit (SFL) was only 58% at 10(5) load

  7. Effect of pre-etching on sealing ability of two current self-etching adhesives

    Directory of Open Access Journals (Sweden)

    K Khosravi

    2005-05-01

    Full Text Available Background: We evaluated the effect of phosphoric acid etching on microleakage of two current self-etching adhesives on enamel margins in comparison to a conventional total- etch system. Methods: Sixty buccal class V cavities were made at the cemento-enamel junction with beveled enamel margins of extracted human premolar teeth and randomly divided into five groups (12 specimens in each group. Group 1 was applying with Clearfil SE bond, Group 2 with 35% phosphoric acid etching of enamel margins plus Clearfil SE bond, Group3 with I bond, Group 4 with 35% phosphoric acid etching of enamel margins plus I bond and Group5 with Scotchbond multi-purpose. All groups restored with a composite resins. After 24 hours storage with 100% humidity, the samples were thermocycled, immersed in a dye solution and sectioned buccoligually and enamel margins microleakage were evaluated on a scale of 0 to 2. Results: The differences between Groups 1 & 3 and Groups 3 & 4 were significant (P<0.05 but no significant differences between Groups1 & 2 or 1 & 5 were observed. Conclusion: The findings suggest that all-in-one adhesive systems need pre-etching enamel margins with phosphoric acid for effectively seal. Key words: Self-Etching Adhesives, Microleakage, Enamel, Total-Etch system

  8. An etching mask and a method to produce an etching mask

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention relates to an etching mask comprising silicon containing block copolymers produced by self-assembly techniques onto silicon or graphene substrate. Through the use of the etching mask, nanostructures having long linear features having sub-10 nm width can be produced....

  9. High density plasma etching of ultrananocrystalline diamond films in O2/CF4 and O2/SF6 inductively coupled plasmas

    Science.gov (United States)

    Park, Jong Cheon; Kim, Seong Hak; Kim, Tae Gyu; Kim, Jin Kon; Cho, Hyun; Lee, Byeong Woo

    2015-03-01

    Inductively coupled plasma etching of ultrananocrystalline diamond (UNCD) films was performed in O2/CF4 and O2/SF6 discharges. Higher etch rates were produced for the O2/SF6 discharges and the films etched in the 10O2/5CF4 discharges retained smooth surface morphology similar to the unetched control sample. Al mask showed a good etch selectivity to the UNCD for both plasma chemistries and highly anisotropic pattern transfer with a vertical sidewall profile was achieved.

  10. Pulsed laser-assisted focused electron-beam-induced etching of titanium with XeF2: enhanced reaction rate and precursor transport.

    Science.gov (United States)

    Noh, J H; Fowlkes, J D; Timilsina, R; Stanford, M G; Lewis, B B; Rack, P D

    2015-02-25

    In order to enhance the etch rate of electron-beam-induced etching, we introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. The evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. The increased etch rate is attributed to photothermally enhanced Ti-F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.

  11. Relation between the ion flux, gas phase composition, and wall conditions in chlorine plasma etching of silicon

    International Nuclear Information System (INIS)

    Ullal, Saurabh J.; Kim, Tae Won; Vahedi, Vahid; Aydil, Eray S.

    2003-01-01

    Transients in plasma composition and positive ion flux due to changing chamber wall conditions during Cl 2 plasma etching of Si were studied using multiple plasma and surface diagnostics. In presence of Si and O containing species in the gas phase a glassy silicon oxychloride film coats the chamber walls over a time scale determined by the concentrations of the Si and O containing deposition precursors. This time scale can be a few minutes as in the case of Si etching with Cl 2 plasma, where the concentration of silicon chloride etching products can be high, or hours as in the case of a Cl 2 plasma maintained in absence of Si wafer, where the Si and O can only come from very slow etching of a quartz window. In either case, SiCl x (1≤x≤4) and Cl concentrations in the gas phase and the total ion flux impinging on the wafer surface increase as the chamber walls are coated with this glassy film. The increase in SiCl x and Cl concentrations are primarily due to lower loss probability of these species by recombination on the chamber walls. The ion flux increases primarily due to higher SiCl x concentration in the discharge. During etching of Si, increases in Cl concentration and ion flux through the mechanism described above increases the etching and SiCl x production rates. This strong coupling among the discharge properties, the wall conditions, and etching rate lead to transients in plasma operation

  12. Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes

    Science.gov (United States)

    Yang, Jiancheng; Ahn, Shihyun; Ren, F.; Khanna, Rohit; Bevlin, Kristen; Geerpuram, Dwarakanath; Pearton, S. J.; Kuramata, A.

    2017-04-01

    Bulk, single-crystal Ga2O3 was etched in BCl3/Ar inductively coupled plasmas as a function of ion impact energy. For pure Ar, the etch rate (R) was found to increase with ion energy (E) as predicted from a model of ion enhanced sputtering by a collision-cascade process, R ∝(E0.5 - ETH0.5), where the threshold energy for Ga2O3, ETH, was experimentally determined to be ˜75 eV. When BCl3 was added, the complexity of the ion energy distribution precluded, obtaining an equivalent threshold. Electrically active damage introduced during etching was quantified using Schottky barrier height and diode ideality factor measurements obtained by evaporating Ni/Au rectifying contacts through stencil masks onto the etched surfaces. For low etch rate conditions (˜120 Å min-1) at low powers (150 W of the 2 MHz ICP source power and 15 W rf of 13.56 MHz chuck power), there was only a small decrease in reverse breakdown voltage (˜6%), while the barrier height decreased from 1.2 eV to 1.01 eV and the ideality factor increased from 1.00 to 1.06. Under higher etch rate (˜700 Å min-1) and power (400 W ICP and 200 W rf) conditions, the damage was more significant, with the reverse breakdown voltage decreasing by ˜35%, the barrier height was reduced to 0.86 eV, and the ideality factor increased to 1.2. This shows that there is a trade-off between the etch rate and near-surface damage.

  13. Optimization of HNA etching parameters to produce high aspect ratio solid silicon microneedles

    International Nuclear Information System (INIS)

    Hamzah, A A; Yeop Majlis, B; Yunas, J; Dee, C F; Abd Aziz, N; Bais, B

    2012-01-01

    High aspect ratio solid silicon microneedles with a concave conic shape were fabricated. Hydrofluoric acid–nitric acid–acetic acid (HNA) etching parameters were characterized and optimized to produce microneedles that have long and narrow bodies with smooth surfaces, suitable for transdermal drug delivery applications. The etching parameters were characterized by varying the HNA composition, the optical mask's window size, the etching temperature and bath agitation. An L9 orthogonal Taguchi experiment with three factors, each having three levels, was utilized to determine the optimal fabrication parameters. Isoetch contours for HNA composition with 0% and 10% acetic acid concentrations were presented and a high nitric acid region was identified to produce microneedles with smooth surfaces. It is observed that an increase in window size indiscriminately increases the etch rate in both the vertical and lateral directions, while an increase in etching temperature beyond 35 °C causes the etching to become rapid and uncontrollable. Bath agitation and sample placement could be manipulated to achieve a higher vertical etch rate compared to its lateral counterpart in order to construct high aspect ratio microneedles. The Taguchi experiment performed suggests that a HNA composition of 2:7:1 (HF:HNO 3 :CH 3 COOH), window size of 500 µm and agitation rate of 450 RPM are optimal. Solid silicon microneedles with an average height of 159.4 µm, an average base width of 110.9 µm, an aspect ratio of 1.44, and a tip angle and diameter of 19.2° and 0.38 µm respectively were successfully fabricated. (paper)

  14. Modification of Patterned Nanoporous Gold Thin Film Electrodes via Electro-annealing and Electrochemical Etching

    Science.gov (United States)

    Dorofeeva, Tatiana

    current to np-Au electrodes, which leads coarsening due to a combination of Joule heating and other mechanisms. This method offers the capability to anneal different electrodes to varying degrees of coarsening in one step, by employing electrodes patterns with different cross-sectional areas - easily attained since np-Au can be patterned into arbitrary shapes via photolithography - to control electrode resistivity, thus current density and the amount of electro-annealing of an electrode. A surprising finding was that electro-annealing lead to electrode coarsening at much lower temperatures than conventional thermal treatment, which was attributed to augmented electron-surface atom interactions at high current densities that may in turn enhance surface atom diffusivity. A major advantage of electro-annealing is the ability to monitor the resistance change of the electrode (surrogate for electrode morphology) in real-time and vary the electro-annealing current accordingly to establish a closed-loop electro-annealing configuration. In nanostructured materials, the electrical resistance is often a function of nanostructure, thus changes in resistance can be directly linked to morphological changes of the electrode. Examination of the underlying mechanisms of nanostructure-dependent resistance change revealed that both ligament diameter and grain size play a role in dictating the observed electrode resistance change. The second method relies on electrochemical etching of ligaments to modify electrode morphology in order to maintain both a high effective surface area and large pores for unhindered transport of molecules to/from the ligament surfaces - an important consideration for many physico-chemical processes, such fuel cells, electrochemical sensors, and drug delivery platforms. The advantage of this method over purely chemical approach is that while an entire sample in exposed to the chemical reagent, the etching process does not occur until the necessary electrochemical

  15. The theory of development of surface morphology by sputter erosion processes

    International Nuclear Information System (INIS)

    Carter, G.; Nobes, M.J.

    1984-01-01

    When a surface is bombarded by an energetic ion flux a rich variety of surface structures are observed to develop at the atomic, microscopic and macroscopic scales. Such structures include elevated, with respect to the surrounding surface, features such as mesas or plateaux, ridges, cones and pyramids and depressed features such as etch pits and cavities. These elementary features may be isolated or in profusion and frequently repetitive patterns of coordinated pyramidal structures, etch pits, surface ledges or facets and ripple or wave-like structures occur. The majority of the features arise rather directly from the erosion action of the sputtering process, particularly from differential erosion processes at different surface localities. The authors outline a general approach to sputter erosion induced surface morphology development based on the concept of the surface as an advancing wave. (Auth.)

  16. High Rate Deep Si Etching using Capacitively Coupled Plasma

    Science.gov (United States)

    Sakai, Itsuko; Sakurai, Noriko; Ohiwa, Tokuhisa

    High rate deep Si etching using SF6/O2 gas chemistry by Magnetically-Enhanced Reactive Ion Etch (MERIE) system using a Dipole-Ring Magnet (DRM) is studied. It is capable of etching holes 40 μm in diameter in a Si substrate at etch rates as high as 50 μm/min. It was found that the Si etch reaction is dominated by the density of fluorine radicals, which is realized at high frequency and pressure. In holes with higher aspect ratios, it was found that the Si etch rate at the bottom of holes is determined not only by the supply of fluorine radicals, but is also influenced by an etch-inhibiting effect related to the sidewall of the hole. Using an 8 μm square mask, holes with straight sidewalls were etched to a depth of 60 μm at an etch rate of 24 μm/min.

  17. Tridimensional morphology and kinetics of etch pit on the {l_brace}0 0 0 1{r_brace} plane of sapphire crystal

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Lunyong [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Sun Jianfei, E-mail: jfsun_hit@263.net [Center for Composite Materials, Harbin Institute of Technology, Harbin 150001 (China); Zuo Hongbo; Yuan Zhiyong [Center for Composite Materials, Harbin Institute of Technology, Harbin 150001 (China); Zhou Ji; Xing Dawei [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Han Jiecai [Center for Composite Materials, Harbin Institute of Technology, Harbin 150001 (China)

    2012-08-15

    The tridimensional morphology and etching kinetics of the etch pit on the C-{l_brace}0 0 0 1{r_brace} plane of sapphire crystal ({alpha}-Al{sub 2}O{sub 3}) in molten KOH were studied experimentally. It was shown that the etch pit takes on tridimensional morphologies with triangular symmetry same as the symmetric property of the sapphire crystal. Pits like centric and eccentric triangular pyramid as well as hexagonal pyramid were observed, but the latter is less in density. In-depth analyses show the side walls of the etch pits belong to the {l_brace}1 1{sup Macron} 0 2{sup Macron }{r_brace} family, and the triangular pit contains edges full composed by Al{sup 3+} ions on the etching surface so it is more stable than the hexagonal pit since its edges on the etching surface contains Al{sup 2+} ions. The etch pits developed in a manner of kinematic wave by the step moving with constant speed, which is controlled by the chemical reaction with activation energy of 96.6 kJ/mol between Al{sub 2}O{sub 3} and KOH. - Graphical abstract: Schematic showing the atomic configuration of the predicted side walls of regular triangular pyramid shaped etch pit on the C-{l_brace}0 0 0 1{r_brace} plane of sapphire crystal. Highlights: Black-Right-Pointing-Pointer Observed the tridimensional morphology of etch pits. Black-Right-Pointing-Pointer Figured out the atomic configuration origin of the etch pits. Black-Right-Pointing-Pointer Quantitatively determined the etch rates of the etch pits.

  18. Etching characteristics of Au thin films using inductively coupled Cl2/Ar plasma

    International Nuclear Information System (INIS)

    Chang, Yun Seong; Kim, Dong Pyo; Kim, Chang Il; Sim, Kwee Bo; Chang, Eui Goo

    2003-01-01

    In this study, Au thin films were etched with a Cl 2 /Ar gas combination using inductively coupled plasma. The etch properties were measured for different gas mixing ratios of Cl 2 /(Cl 2 +Ar) while the other process conditions were fixed at a rf power of 700 W, a dc bias voltage of -150 V, a chamber pressure of 15 m Torr and a substrate temperature of 30 .deg. C. The highest etch rate of the Au thin film was 3500 A/min and the selectivity of Au to SiO 2 was 4.4 at a Cl 2 /(CI 2 +Ar) gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is a chemical reaction between Cl and Au. Au-Cl is hard to remove from the surface because of its high melting point. The etching products can be sputtered by Ar ion bombardment. We obtained the clean and steep profile

  19. Influence of stain etching on low minority carrier lifetime areas of multicrystalline silicon for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Montesdeoca-Santana, A. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Fraunhofer Institute for Solar Energy Systems, Laboratory and Servicecenter Gelsenkirchen, Auf der Reihe 2, 45884 Gelsenkirchen (Germany); Gonzalez-Diaz, B. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Departamento de Energia Fotovoltaica, Instituto Tecnologico y de Energias Renovables. Poligono Industrial de Granadilla s/n, 38600 San Isidro-Granadilla de Abona (Spain); Jimenez-Rodriguez, E. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Ziegler, J. [Fraunhofer Institute for Solar Energy Systems, Laboratory- and Servicecenter Gelsenkirchen. Auf der Reihe 2, 45884 Gelsenkirchen (Germany); Velazquez, J.J. [Departamento de Fisica Fundamental y Experimental, Electronica y Sistemas, Universidad de La Laguna. Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Hohage, S.; Borchert, D. [Fraunhofer Institute for Solar Energy Systems, Laboratory and Servicecenter Gelsenkirchen. Auf der Reihe 2, 45884 Gelsenkirchen (Germany); Guerrero-Lemus, R., E-mail: rglemus@ull.es [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain)

    2011-11-15

    Highlights: > An enhanced minority carrier lifetime at extended defects in multicrystalline silicon is observed with the use of HF/HNO{sub 3} stain etching to texture the surface. > FTIR analysis shows no influence of oxide passivation in this effect. > SEM images show a preferential etching at extended defects suggesting smoothing at defects as one of the causes for the reduced recombination activity. > LBIC images show a reduction in IQE at extended defects in HF/HNO{sub 3} textured multicrystalline solar cells. - Abstract: In this work the use of HF/HNO{sub 3} solutions for texturing silicon-based solar cell substrates by stain etching and the influence of texturing on minority carrier lifetimes are studied. Stain etching is currently used to decrease the reflectance and, subsequently improve the photogenerated current of the cells, but also produces nanostructures on the silicon surface. In the textured samples it has been observed that an improvement on the minority carrier lifetime with respect to the samples treated with a conventional saw damage etching process is produced on grain boundaries and defects, and the origin of this effect has been discussed.

  20. Influence of stain etching on low minority carrier lifetime areas of multicrystalline silicon for solar cells

    International Nuclear Information System (INIS)

    Montesdeoca-Santana, A.; Gonzalez-Diaz, B.; Jimenez-Rodriguez, E.; Ziegler, J.; Velazquez, J.J.; Hohage, S.; Borchert, D.; Guerrero-Lemus, R.

    2011-01-01

    Highlights: → An enhanced minority carrier lifetime at extended defects in multicrystalline silicon is observed with the use of HF/HNO 3 stain etching to texture the surface. → FTIR analysis shows no influence of oxide passivation in this effect. → SEM images show a preferential etching at extended defects suggesting smoothing at defects as one of the causes for the reduced recombination activity. → LBIC images show a reduction in IQE at extended defects in HF/HNO 3 textured multicrystalline solar cells. - Abstract: In this work the use of HF/HNO 3 solutions for texturing silicon-based solar cell substrates by stain etching and the influence of texturing on minority carrier lifetimes are studied. Stain etching is currently used to decrease the reflectance and, subsequently improve the photogenerated current of the cells, but also produces nanostructures on the silicon surface. In the textured samples it has been observed that an improvement on the minority carrier lifetime with respect to the samples treated with a conventional saw damage etching process is produced on grain boundaries and defects, and the origin of this effect has been discussed.

  1. Improvement of Plating Characteristics Between Nickel and PEEK by Plasma Treatment and Chemical Etching

    International Nuclear Information System (INIS)

    Lee, Hye W.; Lee, Jong K.; Park, Ki Y.

    2009-01-01

    Surface of PEEK(poly-ether-ether-ketone) was modified by chemical etching, plasma treatment and mechanical grinding to improve the plating adhesion. The plating characteristics of these samples were studied by the contact angle, plating thickness, gloss and adhesion. Chemical etching and plasma treatment increased wettability, adhesion and gloss. The contact angle of as-received PEEK was 61 .deg. . The contact angles of chemical etched, plasma treated or both were improved to the range of 15∼33 .deg. . In the case of electroless plating, the thickest layer without blister was 1.6 μm. The adhesion strengths by chemical etching, plasma treatment or both chemical etching and plasma treatment were 75 kgf/cm 2 , 102 kgf/cm 2 , 113 kgf/cm 2 , respectively, comparing to the 24 kgf/cm 2 of as-received. In the case of mechanically ground PEEKs, the adhesion strengths were higher than those unground, with the sacrifice of surface gloss. The gloss of untreated PEEK were greater than mechanically ground PEEKs. Plating thickness increased linearly with the plating times

  2. Selective etching of injection molded zirconia-toughened alumina: Towards osseointegrated and antibacterial ceramic implants.

    Science.gov (United States)

    Flamant, Quentin; Caravaca, Carlos; Meille, Sylvain; Gremillard, Laurent; Chevalier, Jérôme; Biotteau-Deheuvels, Katia; Kuntz, Meinhard; Chandrawati, Rona; Herrmann, Inge K; Spicer, Christopher D; Stevens, Molly M; Anglada, Marc

    2016-12-01

    Due to their outstanding mechanical properties and excellent biocompatibility, zirconia-toughened alumina (ZTA) ceramics have become the gold standard in orthopedics for the fabrication of ceramic bearing components over the last decade. However, ZTA is bioinert, which hampers its implantation in direct contact with bone. Furthermore, periprosthetic joint infections are now the leading cause of failure for joint arthroplasty prostheses. To address both issues, an improved surface design is required: a controlled micro- and nano-roughness can promote osseointegration and limit bacterial adhesion whereas surface porosity allows loading and delivery of antibacterial compounds. In this work, we developed an integrated strategy aiming to provide both osseointegrative and antibacterial properties to ZTA surfaces. The micro-topography was controlled by injection molding. Meanwhile a novel process involving the selective dissolution of zirconia (selective etching) was used to produce nano-roughness and interconnected nanoporosity. Potential utilization of the porosity for loading and delivery of antibiotic molecules was demonstrated, and the impact of selective etching on mechanical properties and hydrothermal stability was shown to be limited. The combination of injection molding and selective etching thus appears promising for fabricating a new generation of ZTA components implantable in direct contact with bone. Zirconia-toughened alumina (ZTA) is the current gold standard for the fabrication of orthopedic ceramic components. In the present work, we propose an innovative strategy to provide both osseointegrative and antibacterial properties to ZTA surfaces: we demonstrate that injection molding allows a flexible design of surface micro-topography and can be combined with selective etching, a novel process that induces nano-roughness and surface interconnected porosity without the need for coating, avoiding reliability issues. These surface modifications have the

  3. Fabrication of porous boron-doped diamond electrodes by catalytic etching under hydrogen-argon plasma

    Science.gov (United States)

    Shi, Chao; Li, Cuiping; Li, Mingji; Li, Hongji; Dai, Wei; Wu, Yongheng; Yang, Baohe

    2016-01-01

    Porous boron-doped diamond (BDD) was prepared by hydrogen-argon plasma etching using electrodeposited Ni nanoparticles as a catalyst. The etching process and formation mechanism of porous BDD were investigated by changing the etching time from 30 s to 300 s. Pores were produced due to the C atoms around Ni nanoparticles are easy to react with hydrogen plasma and form methane. With the increase of etching time, the pore size increased, the pore density decreased, and the pore depth first increased and then maintained unchanged. The sp2-bonded graphitic carbons existing on the surface of BDD increase with increasing etching time due to the increase of surface area. No preferential etching was observed due to the high energy of argon plasma. The electrochemical behaviors of the pristine and porous BDD electrodes were characterized by cyclic voltammetry (CV), galvanostatic charge-discharge (GCD) and electrochemical impedance spectroscopy (EIS). The results showed that the porous BDD electrode exhibited high specific capacitance, which is attributed to its high electrical conductivity and large specific surface area. The highest specific capacitance of porous BDD electrode is 9.55 mF cm-2, which is 22 times higher than that of pristine BDD electrode. The specific capacitance retention of the porous BDD electrode reduced to 98.2% of the initial capacitance after 500 cycles and then increased to 120.0% after 10,000 cycles. For the first 500 cycles, the reduction of capacitance can be attributed to the dissolution of Ni nanoparticles that attached on the porous BDD surface or buried in the shallow layer. The capacitance increase after 10,000 cycles is due to the better contact of the electrolytic solution with the residual Ni with the increase of cycle number.

  4. Restructured graphene sheets embedded carbon film by oxygen plasma etching and its tribological properties

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Meiling [Key Laboratory of Education Ministry for Modern Design and Rotor-Bearing System, School of Mechanical Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Diao, Dongfeng, E-mail: dfdiao@szu.edu.cn [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China); Yang, Lei [Key Laboratory of Education Ministry for Modern Design and Rotor-Bearing System, School of Mechanical Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Fan, Xue [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China)

    2015-12-01

    Highlights: • Oxygen plasma etching was developed to improve tribological properties of GSEC film. • Etching restructured 3 nm top layer with smaller crystallite size and higher sp{sup 3} fraction. • The etched film had smoother surface, enhanced mechanical properties, longer wear life. • High electrical conductivity and strong magnetism were retained after etching. - Abstract: An oxygen plasma etching technique was introduced for improving the tribological properties of the graphene sheets embedded carbon (GSEC) film in electron cyclotron resonance plasma processing system. The nanostructural changing in the film caused by oxygen plasma etching was examined by transmission electron microscope, Raman spectroscopy and X-ray photoelectron spectroscopy, showing that the 3 nm thick top surface layer was restructured with smaller graphene nanocrystallite size as well as higher sp{sup 3} bond fraction. The surface roughness, mechanical behavior and tribological properties of the original GSEC and oxygen plasma treated GSEC films were compared. The results indicated that after the oxygen plasma treatment, the average roughness decreased from 20.8 ± 1.1 nm to 1.9 ± 0.1 nm, the hardness increased from 2.3 ± 0.1 GPa to 2.9 ± 0.1 GPa, the nanoscratch depth decreased from 64.5 ± 5.4 nm to 9.9 ± 0.9 nm, and the wear life increased from 930 ± 390 cycles to more than 15,000 frictional cycles. The origin of the improved tribological behavior was ascribed to the 3 nm thick graphene nanocrystallite film. This finding can be expected for wide applications in nanoscale surface engineering.

  5. Influence of acid-etching after grit-blasted on osseointegration of titanium dental implants: in vitro and in vivo studies.

    Science.gov (United States)

    Herrero-Climent, M; Lázaro, P; Vicente Rios, J; Lluch, S; Marqués, M; Guillem-Martí, J; Gil, F J

    2013-08-01

    Rough implant surfaces have shown improved osseointegration rates. In a majority of dental implants, the microrough surfaces are obtained by grit blasting and/or acid-etching. The aim of this contribution was to evaluate the effects of acid-etching, after the grit-blasted treatment in titanium dental implants, on surface wettability, surface energy, osteoblast responses and its osseointegration behavior. Four surfaces were studied: as-machined, acid-etched, micro-rough by grit-blasting and the combination grit-blasted surface with acid-etched. The surfaces with increasing roughness show more osteoblastic adhered cells. This effect was most pronounced on samples blasted and blasted with acid-etching. The roughness obtained by grit-blasting is the main factor in comparison with the acid etching treatment in the biological response. These results were confirmed in vivo tests and histological analysis. The results demonstrated that the combination of the grit-blasted and acid-etched accelerated lightly bone regeneration at the different periods of implantation in comparison with the grit-blasted implants.

  6. The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts

    Directory of Open Access Journals (Sweden)

    Florent Ravaux

    2017-06-01

    Full Text Available To achieve low contact resistance between metal and III-V material, transmission-line-model (TLM structures of molybdenum (Mo were fabricated on indium phosphide (InP substrate on the top of an indium gallium arsenide (InGaAs layer grown by molecular beam epitaxy. The contact layer was prepared using a digital etch procedure before metal deposition. The contact resistivity was found to decrease significantly with the cleaning process. High Resolution Transmission & Scanning Electron Microscopy (HRTEM & HRSTEM investigations revealed that the surface roughness of treated samples was increased. Further analysis of the metal-semiconductor interface using Energy Electron Loss Spectroscopy (EELS showed that the amount of oxides (InxOy, GaxOy or AsxOy was significantly decreased for the etched samples. These results suggest that the low contact resistance obtained after digital etching is attributed to the combined effects of the induced surface roughness and oxides removal during the digital etch process.

  7. A Twice Electrochemical-Etching Method to Fabricate Superhydrophobic-Superhydrophilic Patterns for Biomimetic Fog Harvest.

    Science.gov (United States)

    Yang, Xiaolong; Song, Jinlong; Liu, Junkai; Liu, Xin; Jin, Zhuji

    2017-08-18

    Superhydrophobic-superhydrophilic patterned surfaces have attracted more and more attention due to their great potential applications in the fog harvest process. In this work, we developed a simple and universal electrochemical-etching method to fabricate the superhydrophobic-superhydrophilic patterned surface on metal superhydrophobic substrates. The anti-electrochemical corrosion property of superhydrophobic substrates and the dependence of electrochemical etching potential on the wettability of the fabricated dimples were investigated on Al samples. Results showed that high etching potential was beneficial for efficiently producing a uniform superhydrophilic dimple. Fabrication of long-term superhydrophilic dimples on the Al superhydrophobic substrate was achieved by combining the masked electrochemical etching and boiling-water immersion methods. A long-term wedge-shaped superhydrophilic dimple array was fabricated on a superhydrophobic surface. The fog harvest test showed that the surface with a wedge-shaped pattern array had high water collection efficiency. Condensing water on the pattern was easy to converge and depart due to the internal Laplace pressure gradient of the liquid and the contact angle hysteresis contrast on the surface. The Furmidge equation was applied to explain the droplet departing mechanism and to control the departing volume. The fabrication technique and research of the fog harvest process may guide the design of new water collection devices.

  8. Improved Resin–Zirconia Bonding by Room Temperature Hydrofluoric Acid Etching

    Directory of Open Access Journals (Sweden)

    Mun-Hwan Lee

    2015-03-01

    Full Text Available This in vitro study was conducted to evaluate the shear bond strength of “non-self-adhesive” resin to dental zirconia etched with hydrofluoric acid (HF at room temperature and to compare it to that of air-abraded zirconia. Sintered zirconia plates were air-abraded (control or etched with 10%, 20%, or 30% HF for either 5 or 30 min. After cleaning, the surfaces were characterized using various analytical techniques. Three resin cylinders (Duo-Link were bonded to each treated plate. All bonded specimens were stored in water at 37 °C for 24 h, and then half of them were additionally thermocycled 5000 times prior to the shear bond-strength tests (n = 12. The formation of micro- and nano-porosities on the etched surfaces increased with increasing concentration and application time of the HF solution. The surface wettability of zirconia also increased with increasing surface roughness. Higher concentrations and longer application times of the HF solution produced higher bond-strength values. Infiltration of the resin into the micro- and nano-porosities was observed by scanning electron microscopy. This in vitro study suggests that HF slowly etches zirconia ceramic surfaces at room temperature, thereby improving the resin–zirconia bond strength by the formation of retentive sites.

  9. [Clinical evaluation of a two-step etch-and-rinse adhesive and a one-step self-etch adhesive in non-carious cervical lesion].

    Science.gov (United States)

    Tian, Fu-cong; Wang, Xiao-yan; Gao, Xue-jun

    2014-02-18

    To compare the clinical effectiveness of the two-step etch-and-rinse with the one-step self-etch adhesive in non-carious cervical lesions. Fifty patients were selected, each with at least two wedge-shaped defects in the mouth. The paired defects were randomly bonded either with the two-step etch-and-rinse adhesive α or the one-step self-etch adhesive β and then restored with resin composite. The treatment was carried out by one practitioner according to standard procedures. The evaluation was performed by another practitioner according to modified United States Public Health Service (USPHS) criteria at one week, six months and eighteen months after treatment. Chi-square test was used for statistical analysis. Fifty restorations were placed for each group. Forty-eight patients attended the six months recall, with two restorations loss for each group. Forty-four patients attended the eighteen months recall, with accumulative four restorations loss for adhesive α and six restorations loss for adhesive β. The retention rate was 90.0% for group α and 86.4% for group β. Marginal adaptation of three restorations in group α and five restorations in group β were scored Bravo; while for marginal discoloration, two restorations in group α and three restorations in group β were scored Bravo respectively. No secondary caries and post-operative sensitivity occurred for any of the restorations after eighteen months. No significant difference was detected between the groups for any evaluation criteria (P > 0.05). Within the observation period of this study, the two-step etch-and-rinse adhesive and the one-step self-etch adhesive showed similar clinical performance. The long term follow-up is still warranted.

  10. Wavelength dependent laser-induced etching of Cr–O doped GaAs ...

    Indian Academy of Sciences (India)

    Administrator

    sub-bandgap photon illumination the etching process starts vigorously through the mediation of intermediate defect states. The defect states initiate the pits formation and subsequently pore propagation occurs due to asymmetric electric field in the pore. Formation of GaAs nanostructures is observed using scanning electron.

  11. Wavelength dependent laser-induced etching of Cr–O doped GaAs ...

    Indian Academy of Sciences (India)

    2016-08-26

    Aug 26, 2016 ... It is observed that under sub-bandgap photon illumination the etching process starts vigorously through the mediation of intermediate defect states. The defect states initiate the pits formation and subsequently pore propagation occurs due to asymmetric electric field in the pore. Formation of GaAs ...

  12. Wet-etched phononic crystal waveguiding on GaAs

    Science.gov (United States)

    Muzar, Edward; Azodi Aval, Golnaz; Stotz, James A. H.

    2018-01-01

    A wet-etched phononic crystal waveguide in GaAs with approximately two micron deep inclusions is studied both numerically and experimentally for controlled surface acoustic wave propagation. Numerically, the phononic crystal was modelled using the finite element method (FEM) with COMSOL Multiphysics, and the surface displacement of the acoustic waves was measured using optical interferometry. The computed filter response of the phononic crystal confirmed that the phononic crystal was an effective stop band filter in the interval of 400 MHz and 450 MHz. An L1 linear defect waveguide with a stepped funnel entrance design is shown to perform well at a surface acoustic wave frequency of 410.344 MHz and in agreement to simulated results. The phononic crystal waveguide system shows promise for use in acoustic control of GaAs-based quantum nanostructures.

  13. Influence of frequency on shear fatigue strength of resin composite to enamel bonds using self-etch adhesives.

    Science.gov (United States)

    Takamizawa, Toshiki; Scheidel, Donal D; Barkmeier, Wayne W; Erickson, Robert L; Tsujimoto, Akimasa; Latta, Mark A; Miyazaki, Masashi

    2016-09-01

    The purpose of this study was to determine the influence of different frequency rates on of bond durability of self-etch adhesives to enamel using shear fatigue strength (SFS) testing. A two-step self-etch adhesive (OX, OptiBond XTR), and two single step self-etch adhesives (GB, G-ӕnial Bond and SU, Scotchbond Universal) were used in this study. The shear fatigue strength (SFS) to enamel was obtained. A staircase method was used to determine the SFS values with 50,000 cycles or until failure occurred. Fatigue testing was performed at frequencies of 5Hz, 10Hz, and 20Hz. For each test condition, 30 specimens were prepared for the SFS testing. Regardless of the bond strength test method, OX showed significantly higher SFS values than the two single-step self-etch adhesives. For each of the three individual self-etch adhesives, there was no significant difference in SFS depending on the frequency rate, although 20Hz results tended to be higher. Regardless of the self-etch adhesive system, frequencies of 5Hz, 10Hz, and 20Hz produced similar results in fatigue strength of resin composite bonded to enamel using 50,000 cycles or until bond failure. Accelerated fatigue testing provides valuable information regarding the long term durability of resin composite to enamel bonding using self-etch adhesive system. Copyright © 2016 Elsevier Ltd. All rights reserved.

  14. Effect of collagen fibrils removal on shear bond strength of total etch and self etch adhesive systems

    Directory of Open Access Journals (Sweden)

    Pishevar L.

    2009-12-01

    Full Text Available "nBackground and Aim: Sodium hypochlorite can remove the organic phase of the demineralized dentin and it produces direct resin bonding with hydroxyapatite crystals. Therefore, the hydrolytic degradation of collagen fibrils which might affect the bonding durability is removed. The aim of this study was to evaluate the effect of collagen fibrils removal by 10% NaOCl on dentin shear bond strength of two total etch and self etch adhesive systems."nMaterials and Methods: Sixty extracted human premolar teeth were used in this study. Buccal surface of teeth were grounded until dentin was exposed. Then teeth were divided into four groups. According to dentin surface treatment, experimental groups were as follows: Group I: Single Bond (3M according to manufacture instruction, Group II: 10% NaOCl+Single bond (3M, Group III: Clearfil SE Bond (Kuraray according to manufacture instruction, and Group IV: Clearfil SE Bond primer. After that, the specimens were immersed in 50% acetone solution for removing extra monomer. Then the specimens were rinsed and dried. 10% NaOCl was applied and finally adhesive was used. Then composite was bonded to the treated surfaces using a 4 2 mm cylindrical plastic mold. Specimens were thermocycled for 500 cycles (5-55ºC. A shear load was employed by a universal testing machine with a cross head speed of 1mm/min. The data were analyzed for statistical significance with One-way ANOVA, Two-way ANOVA and Tukey HSD post-hoc tests."nResults: The mean shear bond strengths of groups were as follows: Single Bond=16.8±4.2, Clearfil SE Bond=23.7±4.07, Single Bond+NaOCl=10.5±4.34, Clearfil SE Bond+NaOCl=23.3±3.65 MPa. Statistical analysis revealed that using 10% NaOCl significantly decreased the shear bond strength in Single Bond group (P=0.00, but caused no significant difference in the shear bond strength in Clearfil SE Bond group (P=0.99."nConclusion: Based on the results of this study, NaOCl treatment did not improve the bond

  15. Assessment of Microshear Bond Strength: Self-Etching Sealant versus Conventional Sealant.

    Directory of Open Access Journals (Sweden)

    Mina Biria

    2014-04-01

    Full Text Available Recently, self-etching fissure sealants have been introduced to reduce technical sensitivity; however, their efficacy should be assessed. The aim of this study was to assess of the microshear bond strength of self-etching and conventional fissure sealants.Thirty non-carious third molars were randomly divided into three groups (N=10. Microcylinders of Concise fissure sealant were bonded to prepared buccal and lingual surfaces using the two following procedures. In the first group, phosphoric acid was used to prepare the substrate; whereas in group two, Concise was used in combination with Prompt L-Pop. In group 3, a self-etching fissure sealant (Enamel Loc was utilized per se. After 24 hours, the samples were subjected to 500 rounds of thermocycling and shear bond testing using a microtensile tester machine with a crosshead speed of 0.5mm/min. Data were analyzed using one-way repeated measure ANOVA and Bonferroni Post HOC tests (SPSS version 16.THE MEAN AND STANDARD DEVIATION OF MICROSHEAR BOND STRENGTH OF THE GROUPS WERE AS FOLLOWS: Group 1: Concise+ etching (14.59 ± 1.19 MPa, Group 2: Concise+Prompt L-Pop (12.86 ± 1.98 MPa, and Group 3: Enamel Loc (5.59 ± 0.72 MPa. One-way ANOVA revealed that all the differences were significant and the conventional sealant exhibited the highest mean bond strength.Conventional sealant using phosphoric acid etch application prior to fissure sealant application demonstrated more bond strength in comparison with that of self-etch bonding and self-etch sealant.

  16. Influence of different smear layers on bond durability of self-etch adhesives.

    Science.gov (United States)

    Takamizawa, Toshiki; Barkmeier, Wayne W; Sai, Keiichi; Tsujimoto, Akimasa; Imai, Arisa; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    2018-02-01

    The purpose of this study was to determine the influence of different smear layers on enamel and dentin bond durability of various types of self-etch adhesives. Two universal adhesives, Scotchbond Universal (SU) and Prime & Bond elect (PE); a conventional single-step self-etch adhesive, G-ænial Bond (GB); and two two-step self-etch adhesives, Optibond XTR (OX) and Clearfil SE Bond (SE) were used in this study. Shear bond strengths (SBS) and shear fatigue strengths (SFS) to human enamel and dentin were determined with different smear layer conditions. The prepared specimens were divided into three groups. The bonding surfaces were prepared by grinding with either (1) #180, (2) #600, or (3) #4000-SiC papers before making the bonded assemblies. For each group, 15 specimens were prepared for the SBS and 30 specimens for the SFS. The two-step self-etch adhesives showed significantly higher SFS values than the single-step self-etch adhesives, regardless of the smear layer condition or substrate. Although most of the tested adhesives showed no significant differences in enamel SFS values among the smear layer groups, SU, GB, and SE showed significantly lower SFS values in the #180 in dentin groups than the #600 and #4000 groups. The influence of different smear layer conditions on bond durability was adhesive dependent. Furthermore, the smear layers generated on different substrates also influenced the bond quality of the self-etch adhesives. Smear layer conditions of enamel and dentin influence the bond durability of universal adhesives and conventional single and two-step self-etch adhesives. Copyright © 2017 The Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

  17. Effect of ceramic etching protocols on resin bond strength to a feldspar ceramic.

    Science.gov (United States)

    Bottino, M A; Snellaert, A; Bergoli, C D; Özcan, M; Bottino, M C; Valandro, L F

    2015-01-01

    This study sought to evaluate the resin microtensile bond strength (MTBS) stability of a leucite-reinforced ceramic after different ceramic etching protocols. The microtensile test had 40 ceramic blocks (5×5×6 mm) assigned to five groups (n=8), in accordance with the following surface etching protocols: NE nonetched (control); 9HF: hydrofluoric (HF) acid etching (9%HF)+wash/dry; 4HF: 4%HF+wash/dry; 5HF: 5%HF+wash/dry; and 5HF+N: 5%HF+neutralizer+wash/dry+ultrasonic-cleaning. Etched ceramic surfaces were treated with a silane agent. Next, resin cement blocks were built on the prepared ceramic surface and stored for 24 hours in distilled water at 37°C. The specimens were then sectioned to obtain microtensile beams (32/block), which were randomly assigned to the following conditions, nonaged (immediate test) and aged (water storage for 150 days plus 12,000 thermal cycles), before the microtensile test. Bond strength data were submitted to one-way analysis of variance and Tukey test (α=0.05). Additional ceramic samples were subjected to the different ceramic etching protocols and evaluated using a scanning electron microscope (n=2) and atomic force microscopy (n=2). Aging led to a statistically significant decrease in the MTBS for all groups, except the untreated one (NE). Among the groups submitted to the same aging conditions, the untreated (NE) revealed inferior MTBS values compared to the 9HF and 4HF groups. The 5HF and 5HF+N groups had intermediate mean values, being statistically similar to the higher values presented by the 9HF and 4HF groups and to the lower value associated with the NE group. The neutralization procedure did not enhance the ceramic/resin cement bond strength. HF acid etching is a crucial step in resin/ceramic bonding.

  18. Depth of Etch Comparison Between Self-limiting and Traditional Etchant Systems

    Science.gov (United States)

    2016-06-18

    a shallow layer of enamel is removed by etching. In this manner, plaque, surface and sub -surface cuticles are effectively removed from the site to...tissue and resin. Second, the remaining enamel surface is rendered porous by the acid solution. It is into this porous region that the resin can...using a Gausian filter in a 7x7 pixel size and then height cut level provided further noise reduction which eliminated signals above 65500 and

  19. Are self-etch adhesive systems effective in the retention of occlusal sealants? A systematic review and meta-analysis.

    Science.gov (United States)

    Botton, Graziela; Morgental, Caroline Sonego; Scherer, Maitê Munhoz; Lenzi, Tathiane Larissa; Montagner, Anelise Fernandes; Rocha, Rachel de Oliveira

    2016-11-01

    Occlusal sealants are an effective method for caries prevention, although the effectiveness of different application strategies has not been established yet. This systematic review compared the retention rate of sealants placed on occlusal surfaces following the use of self-etch adhesive systems and traditional acid etching, with or without the application of adhesive system. Literature searching was carried out until June 2015 in PubMed/MEDLINE, CENTRAL, and ClinicalTrials databases selecting randomized clinical trials that evaluated self-etch adhesive systems associated with pit and fissure sealants in primary or permanent molars comprising retention as outcome. From 683 potentially eligible studies, 10 were selected for full-text analysis and 5 were included in the meta-analysis. Two reviewers independently selected the studies, extracted the data, and assessed the bias risk. Pooled-effect estimates were obtained by comparing the retention failure rate between groups (self-etch systems vs acid etching with or without adhesive systems). Significant difference was found between groups, favoring the control group (prior acid etching) (P self-etch systems show lower retention throughout time than sealants applied in the conventional approach, regardless of the use of adhesive systems. © 2015 BSPD, IAPD and John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

  20. Development of Novel Al-Doped Zinc Oxide Films Fabricated on Etched Glass and Their Application to Solar Cells

    Science.gov (United States)

    Hongsingthong, Aswin; Aino, Akehiro; Sichanugrist, Porponth; Konagai, Makoto; Kuramochi, Hideto; Akiike, Ryo; Iigusa, Hitoshi; Utsumi, Kentaro; Shibutami, Tetsuo

    2012-10-01

    We have successfully developed novel aluminum-doped zinc oxide (AZO-X) films with a high haze ratio by the combined use of an etched glass substrate and wet-etched AZO-X films. The effects of the use of an etched glass substrate and wet-chemical etching on the properties of AZO-X films were investigated. The texture size and rms roughness of these films largely increased with glass surface roughening. Post-treatment using wet chemical etching slightly increased the texture size and rms roughness. The etched glass approach has been found to be a promising method for achieving an AZO-coated glass substrate with a high haze ratio. Using high-haze ratio AZO-X films as the front transparent conductive oxide (TCO) layers in solar cells, we improved the quantum efficiency (QE) of these solar cells particularly in the long-wavelength region. Thus, the AZO-X films deposited on etched glass have a high potential for use as front TCO layers in silicon-based thin-film solar cells.

  1. Deep reactive ion etching of 4H-SiC via cyclic SF6/O2 segments

    Science.gov (United States)

    Luna, Lunet E.; Tadjer, Marko J.; Anderson, Travis J.; Imhoff, Eugene A.; Hobart, Karl D.; Kub, Fritz J.

    2017-10-01

    Cycles of inductively coupled SF6/O2 plasma with low (9%) and high (90%) oxygen content etch segments are used to produce up to 46.6 µm-deep trenches with 5.5 µm-wide openings in single-crystalline 4H-SiC substrates. The low oxygen content segment serves to etch deep in SiC whereas the high oxygen content segment serves to etch SiC at a slower rate, targeting carbon-rich residues on the surface as the combination of carbon-rich and fluorinated residues impact sidewall profile. The cycles work in concert to etch past 30 µm at an etch rate of ~0.26 µm min-1 near room temperature, while maintaining close to vertical sidewalls, high aspect ratio, and high mask selectivity. In addition, power ramps during the low oxygen content segment is used to produce a 1:1 ratio of mask opening to trench bottom width. The effect of process parameters such as cycle time and backside substrate cooling on etch depth and micromasking of the electroplated nickel etch mask are investigated.

  2. Selective etching characteristics of the AgInSbTe phase-change film in laser thermal lithography

    International Nuclear Information System (INIS)

    Li, Hao; Geng, Yongyou; Wu, Yiqun

    2012-01-01

    In the current work, the etching selectivity of the AgInSbTe phase-change film in laser thermal lithography is reported for the first time. Film phase change induced by laser irradiation and etching selectivity to crystalline and amorphous states in different etchants, including hydrochloric acid, sulfuric acid, phosphoric acid, nitric acid, sodium hydroxide, sodium sulfide, ammonium sulfide and ammonium hydroxide, are investigated. The results indicated that ammonium sulfide solvent (2.5 mol/L) had excellent etching selectivity to crystalline and amorphous states of the AgInSbTe film, and the etching characteristics were strongly influenced by the laser power density and laser irradiation time. The etching rate of the crystalline state of the AgInSbTe film was 40.4 nm/min, 20 times higher than that of the amorphous state under optimized irradiation conditions (power density: 6.63 mW/μm 2 and irradiation time: 330 ns), with ammonium sulfide solvent (2.5 mol/L) as etchant. The step profile produced in the selective etching was clear, and smooth surfaces remained both on the step-up and step-down with a roughness of less than 4 nm (10 x 10 μm). The excellent performance of the AgInSbTe phase-change film in selective etching is significant for fabrication of nanostructures with super-resolution in laser thermal lithography. (orig.)

  3. Effects of titanium brush on machined and sand-blasted/acid-etched titanium disc using confocal microscopy and contact profilometry.

    Science.gov (United States)

    Park, Jun-Beom; Jeon, Yongpyo; Ko, Youngkyung

    2015-02-01

    Mechanical techniques, including scaling with metal, plastic, or ultrasonic instruments, rubber cup polishing, air-powder abrasive system and brushing with a conventional or a rotating brush, have been used for the debridement of dental implants. Recently, rotating brushes with titanium bristles (titanium brush) have been introduced for the debridement of implant surface when peri-implant osseous defects occur. The purpose of this study was to evaluate the effects of a titanium brush on machined (MA) and sand-blasted and acid-etched (SA) titanium surfaces using scanning electron microscopy, confocal microscopy and profilometry. Moreover, correlations between the two quantitative evaluation methods (confocal microscopy and contact profilometry) were assessed. Both MA and SA discs were treated with rotating titanium brush at 300 rpm under irrigation for a total of 40 s. Roughness measurements were taken with confocal microscopy and surface profilometry. Then, the MA and SA surfaces were evaluated using scanning electron microscopy to determine the changes of the surface properties. Untreated MA surface demonstrated uniform roughness with circumferential machining marks, and scratch lines over the original surfaces were observed after treatment with the titanium brush. Similarly, the titanium brush produced noticeable changes on the SA titanium surfaces. However, this treatment with titanium brush did not significantly change the roughness parameters, including the arithmetic mean height of the surface (Sa) and the maximum height of the surface (Sz), in both MA and SA surfaces. Correlations between two evaluation methods showed a Pearson correlation coefficient of 0.98 with linear regression R(2) of 0.96. This study showed that the treatment with the titanium brush did not significantly change the roughness parameters, including Sa and Sz, in both MA and SA surfaces. Correlations between confocal microscopy and surface profilometry showed high correlation with a

  4. Characterization of graphite etched with potassium hydroxide and its application in fast-rechargeable lithium ion batteries

    Science.gov (United States)

    Shim, Jae-Hyun; Lee, Sanghun

    2016-08-01

    Surface-modified graphite for application as an anode material in lithium ion batteries was obtained by etching with KOH under mild conditions without high-temperature annealing. The surface of the etched graphite is covered with many nano-sized pores that act as entrances for lithium ions during the charging process. As compared with pristine graphite and other references such as pitch-coated or etched graphite samples with annealing, our non-annealed etched graphite exhibits excellent electrochemical properties, particularly at fast charging rates of over 2.5 C. While avoidance of the trade-off between increase of irreversible capacity and good rate capability has previously been a main concern in highly porous carbonaceous materials, we show that the slightly larger surface area created by the etching does not induce a significant increase of irreversible capacity. This study shows that it is important to limit the size of pores to the nanometer scale for excellent battery performance, which is possible by etching under relatively mild conditions.

  5. Substrate temperature effect on F+ etching of SiC: Molecular dynamics simulation

    NARCIS (Netherlands)

    Lu, X.; Ning, J.; Qin, Y.; Qian, Q.; Chuanwu, Z.; Ying, Y.; Ming, J.; Gou, F.

    2009-01-01

    In this study, we performed molecular dynamics simulations to investigate F+ continuously bombarding SiC surfaces at temperatures of 100, 400, 600 and 800 K with the energy of 150 eV. The simulation results show that the etch rate of Si atoms is more than that of C atoms. With increasing

  6. Gas plasma etching of PEO/PBT segmented block copolymer films

    NARCIS (Netherlands)

    Olde riekerink, M.B.; Claase, M.B.; Engbers, G.H.M.; Grijpma, Dirk W.; Feijen, Jan

    2003-01-01

    A series of poly(ethylene oxide)/poly(butylene terephthalate) (PEO/PBT) segmented block copolymer films was treated with a radio-frequency carbon dioxide (CO2) or with argon (Ar) plasma. The effects of (preferential) etching on surface structure, topography, chemistry, and wettability were studied

  7. Influence of filler existence on microleakage of a self-etch adhesive system

    NARCIS (Netherlands)

    Mirmohammadi, H.; Khosravi, K.; Kashani, K.; Kleverlaan, C.J.; Feilzer, A.J.

    2014-01-01

    Aim: This study evaluated the effect of filler existence in self-etch adhesive resin on the marginal leakage of a class V restoration. Materials and Methods: Class V cavities were prepared and restored with a resin composite on the buccal surfaces of 48 premolars lined with unfilled or filled

  8. Effect of chlorhexidine on the shear bond strength of self-etch ...

    African Journals Online (AJOL)

    The aim of this study was to investigate the effect of chlorhexidine on shear bond strength of self-etch adhesives to dentin. The crowns of 60 sound human premolars were horizontally sectioned to expose the coronal dentin. Dentin surfaces were polished with 320 grit silicon carbide papers, and were randomly divided into 4 ...

  9. Smear layer-deproteinizing improves bonding of one-step self-etch adhesives to dentin.

    Science.gov (United States)

    Thanatvarakorn, Ornnicha; Prasansuttiporn, Taweesak; Thittaweerat, Suppason; Foxton, Richard M; Ichinose, Shizuko; Tagami, Junji; Hosaka, Keiichi; Nakajima, Masatoshi

    2018-03-01

    Smear layer deproteinizing was proved to reduce the organic phase of smear layer covered on dentin surface. It was shown to eliminate hybridized smear layer and nanoleakage expression in resin-dentin bonding interface of two-step self-etch adhesive. This study aimed to investigate those effects on various one-step self-etch adhesives. Four different one-step self-etch adhesives were used in this study; SE One (SE), Scotchbond™ Universal (SU), BeautiBond Multi (BB), and Bond Force (BF). Flat human dentin surfaces with standardized smear layer were prepared. Smear layer deproteinizing was carried out by the application of 50ppm hypochlorous acid (HOCl) on dentin surface for 15s followed by Accel ® (p-toluenesulfinic acid salt) for 5s prior to adhesive application. No surface pretreatment was used as control. Microtensile bond strength (μTBS) and nanoleakage under TEM observation were investigated. The data were analyzed by two-way ANOVA and Tukey's post-hoc test and t-test at the significant level of 0.05. Smear layer deproteinizing significantly improved μTBS of SE, SU, and BB (pself-etch adhesives, resulting in the improving μTBS, eliminating hybridized smear layer and preventing reticular nanoleakage formation in resin-dentin bonding interface. Copyright © 2018 The Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

  10. Oxidative Etching and Metal Overgrowth of Gold Nanorods within Mesoporous Silica Shells

    NARCIS (Netherlands)

    Deng, Tian Song; Van Der Hoeven, Jessi E S; Yalcin, Anil O.; Zandbergen, Henny W.; Van Huis, Marijn A.; Van Blaaderen, Alfons

    2015-01-01

    Composite noble metal-based nanorods for which the surface plasmon resonances can be tuned by composition and geometry are highly interesting for applications in biotechnology, imaging, sensing, optoelectronics, photovoltaics, and catalysis. Here, we present an approach for the oxidative etching and

  11. Selective etching of semicrystalline polymers CF4 gas plasma treatment of poly(ethylene)

    NARCIS (Netherlands)

    Olde riekerink, M.B.; Terlingen, J.G.A.; Terlingen, J.G.A.; Engbers, G.H.M.; Feijen, Jan

    1999-01-01

    A series of poly(ethylene) (PE) films with different degrees of crystallinity was treated with a radio-frequency tetrafluoromethane (CF4) gas plasma (48-49 W, 0.06-0.07 mbar, and continuous vs pulsed treatment). The etching behavior and surface chemical and structural changes of the PE films were

  12. Does Adhesive Resin Application Contribute to Resin Bond Durability on Etched and Silanized Feldspathic Ceramic?

    NARCIS (Netherlands)

    Passos, Sheila Pestana; Valandro, Luiz Felipe; Amaral, Regina; Ozcan, Mutlu; Bottino, Marco Antonio; Kimpara, Estevao Tomomitsu

    2008-01-01

    Purpose: To assess the effect of adhesive application and aging on the bond durability of resin cement to etched and silanized feldspathic ceramic. Materials and Methods: Twenty blocks (6.4 x 6.4 x 4.8 mm) of feldspathic ceramic (Vita VM7) were produced. The ceramic surfaces were conditioned with

  13. A study on test variables effected on grain boundary etching test

    International Nuclear Information System (INIS)

    Baek, Seung Se; Na, Sung Hoon; Yu, Hyo Sun; Lee, Hae Moo

    2001-01-01

    Recently the non-destructive test technique which uses the grain boundary etching characteristics owing to the variation of material structures has been proposed. However, during in-serviced GEM test there are a lot of variables such as the changes of temperature and concentration of etching solution, the roughness condition of surface polished etc.. The purpose of this paper is to investigate the influences of these test variables on GEM test results in order to establish a reliable and sensitive of GEM evaluation technique. The experiments are conducted in various solution temperatures, 10 deg. C, 15 .deg. C, 20 .deg. C, and 25 .deg. C and in 70% and 100% concentrations of that, and in various surface roughnesses polished by no.800, no.2000, and 0.3μm alumina powder. Through the test with variables, it is verified that the decrease of temperature and concentration of etching solution and the coarsened surface roughness by not using polishing cloth and powder induce some badly and/or greatly influences on GEM test results like grain boundary etching width(W GB ) and intersecting point ratio(N i /N o ). Therefore, to get reliable and good GEM test results, it must be prepared the surface of specimen polished by polishing cloth and 0.3μm alumina powder and the saturated picric acid solution having 25 .deg. C and be maintained the constant temperature(25 .deg. C) during GEM test

  14. Micro-diffraction Investigation of Localized Strain in Mesa-etched HgCdTe Photodiodes

    Science.gov (United States)

    Tuaz, Aymeric; Ballet, Philippe; Biquard, Xavier; Rieutord, François

    2017-09-01

    We present an x-ray micro-diffraction investigation of localized strain and lattice disorientation in HgCdTe layers with a submicronic resolution using a synchrotron white beam in Laue configuration. Diffraction peak displacement mapping evidences bending of the crystal planes around mesa-etched photodiodes, with strong dependence upon the processing steps. The etching step by itself does not induce any deformation within the layer, while the passivation step leads to sufficient strain for plastic deformation to occur at the lateral edges of the etching. The annealing step is found to have a healing effect on the layer, which reduces the overall deformation and even re-crystallizes plastically deformed areas of the layer.

  15. DURIP 99 - Instrumentation for Deposition and Etching of Ferromagnetic Nanoparticles

    National Research Council Canada - National Science Library

    Kummel, Andrew

    2000-01-01

    .... Since silver is much more difficult to etch than iron due to the lack of volatile silver halides, this spontaneous coating of Fe by Ag explains the difficulty in etching Fe particles deposited on Ag substrates. (b...

  16. Elements for hard X-ray optics produced by cryogenic plasma etching of silicon

    Science.gov (United States)

    Miakonkikh, Andrey V.; Rogozhin, Alexander E.; Rudenko, Konstantin V.; Lukichev, Vladimir F.; Yunkin, Vyacheslav A.; Snigirev, Anatoly A.

    2016-12-01

    A number of different hard X-ray optics elements such as refractive lenses, refractive bi-lenses and multilens interferometers, mirror interferometers can be made of Silicon. The optical performance of these elements depends on the quality of refracting and reflecting surfaces. Cryogenic deep anisotropic etching was proposed for fabrication of parabolic planar lenses and mirror interferometers. The investigation of sidewall roughness was done by AFM and by optical interferometry. Geometrical parameters of structures were measured by SEM. It was observed that roughness of inner sidewalls of etched structures does not exceed 3 nm/um (RMS) and deviation from vertical profile was within 30 nm along 20 um depth.

  17. Influence of different pre-etching times on fatigue strength of self-etch adhesives to dentin.

    Science.gov (United States)

    Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Suzuki, Takayuki; Scheidel, Donal D; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    2016-04-01

    The purpose of this study was to use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence on dentin bonding of phosphoric acid pre-etching times before the application of self-etch adhesives. Two single-step self-etch universal adhesives [Prime & Bond Elect (EL) and Scotchbond Universal (SU)], a conventional single-step self-etch adhesive [G-aenial Bond (GB)], and a two-step self-etch adhesive [OptiBond XTR (OX)] were used. The SBS and SFS values were obtained with phosphoric acid pre-etching times of 3, 10, or 15 s before application of the adhesives, and for a control without pre-etching. For groups with 3 s of pre-etching, SU and EL showed higher SBS values than control groups. No significant difference was observed for GB among the 3 s, 10 s, and control groups, but the 15 s pre-etching group showed significantly lower SBS and SFS values than the control group. No significant difference was found for OX among the pre-etching groups. Reducing phosphoric acid pre-etching time can minimize the adverse effect on dentin bonding durability for the conventional self-etch adhesives. Furthermore, a short phosphoric acid pre-etching time enhances the dentin bonding performance of universal adhesives. © 2016 Eur J Oral Sci.

  18. Enhancement of Particle Track Etch Rate in CR-39 by UV Exposure

    Science.gov (United States)

    Wiesner, Micah; Ume, Rubab; McLean, James; Sangster, Craig; Regan, Sean

    2015-11-01

    The use of CR-39 plastic as a Solid State Nuclear Track Detector is effective for obtaining data in high-energy particle experiments including inertial confinement fusion. To reveal particle tracks after irradiation, CR-39 is chemically etched at elevated temperatures with NaOH, producing signal pits at the nuclear track sites that are measurable by an optical microscope. CR-39 pieces sometimes also exhibit etch-induced noise, either surface features not caused by nuclear particles. When CR-39 is exposed to high intensity UV light after nuclear irradiation with 5.4 MeV alpha particles and before etching, an increase in etch rates and pit diameters is observed, though UV exposure can also increase noise. We have determined that light from a low pressure mercury vapor lamp (predominantly wavelength 253.7 nm) increases etch rates and pit diameters while causing minimal background noise. Heating CR-39 to elevated temperatures (~80 °C) during UV exposure also improves the signal-to-noise ratio for this process. Surprisingly, initial data from CR-39 irradiated with 3.4 MeV protons and exposed to UV show reduced pit diameters. This material is based in part upon work supported by the Department of Energy National Nuclear Security Administration under Award Number DE-NA0001944.

  19. Temperature Rise Induced by Light Curing Unit Can Shorten Enamel Acid-Etching Time

    Directory of Open Access Journals (Sweden)

    Ahmad Najafi Abrandabadi

    2016-08-01

    Full Text Available Objectives: The aim of this in-vitro study was to assess the thermal effect of light emitting diode (LED light curing unit on the enamel etching time.Materials and Methods: Three treatment groups with 15 enamel specimens each were used in this study: G1: Fifteen seconds of etching, G2: Five seconds of etching, G3: Five seconds of etching plus LED light irradiation (simultaneously. The micro shear bond strength (µSBS of composite resin to enamel was measured.Results: The mean µSBS values ± standard deviation were 51.28±2.35, 40.47±2.75 and 50.00±2.59 MPa in groups 1, 2 and 3, respectively. There was a significant difference between groups 1 and 2 (P=0.013 and between groups 2 and 3 (P=0.032 in this respect, while there was no difference between groups 1 and 3 (P=0.932.Conclusion: Simultaneous application of phosphoric acid gel over enamel surface and light irradiation using a LED light curing unit decreased enamel etching time to five seconds without compromising the µSBS.

  20. Temperature Rise Induced by Light Curing Unit Can Shorten Enamel Acid-Etching Time.

    Science.gov (United States)

    Najafi Abrandabadi, Ahmad; Sheikh-Al-Eslamian, Seyedeh Mahsa; Panahandeh, Narges

    2015-12-01

    The aim of this in-vitro study was to assess the thermal effect of light emitting diode (LED) light curing unit on the enamel etching time. Three treatment groups with 15 enamel specimens each were used in this study: G1: Fifteen seconds of etching, G2: Five seconds of etching, G3: Five seconds of etching plus LED light irradiation (simultaneously). The micro shear bond strength (μSBS) of composite resin to enamel was measured. The mean μSBS values ± standard deviation were 51.28±2.35, 40.47±2.75 and 50.00±2.59 MPa in groups 1, 2 and 3, respectively. There was a significant difference between groups 1 and 2 (P=0.013) and between groups 2 and 3 (P=0.032) in this respect, while there was no difference between groups 1 and 3 (P=0.932). Simultaneous application of phosphoric acid gel over enamel surface and light irradiation using a LED light curing unit decreased enamel etching time to five seconds without compromising the μSBS.

  1. A multi-step electrochemical etching process for a three-dimensional micro probe array

    International Nuclear Information System (INIS)

    Kim, Yoonji; Youn, Sechan; Cho, Young-Ho; Park, HoJoon; Chang, Byeung Gyu; Oh, Yong Soo

    2011-01-01

    We present a simple, fast, and cost-effective process for three-dimensional (3D) micro probe array fabrication using multi-step electrochemical metal foil etching. Compared to the previous electroplating (add-on) process, the present electrochemical (subtractive) process results in well-controlled material properties of the metallic microstructures. In the experimental study, we describe the single-step and multi-step electrochemical aluminum foil etching processes. In the single-step process, the depth etch rate and the bias etch rate of an aluminum foil have been measured as 1.50 ± 0.10 and 0.77 ± 0.03 µm min −1 , respectively. On the basis of the single-step process results, we have designed and performed the two-step electrochemical etching process for the 3D micro probe array fabrication. The fabricated 3D micro probe array shows the vertical and lateral fabrication errors of 15.5 ± 5.8% and 3.3 ± 0.9%, respectively, with the surface roughness of 37.4 ± 9.6 nm. The contact force and the contact resistance of the 3D micro probe array have been measured to be 24.30 ± 0.98 mN and 2.27 ± 0.11 Ω, respectively, for an overdrive of 49.12 ± 1.25 µm.

  2. Anodic etching of p-type cubic silicon carbide

    Science.gov (United States)

    Harris, G. L.; Fekade, K.; Wongchotigul, K.

    1992-01-01

    p-Type cubic silicon carbide was anodically etched using an electrolyte of HF:HCl:H2O. The etching depth was determined versus time with a fixed current density of 96.4 mA/sq cm. It was found that the etching was very smooth and very uniform. An etch rate of 22.7 nm/s was obtained in a 1:1:50 HF:HCl:H2O electrolyte.

  3. Study of the etching mechanism of tantalum thin films by argon actinometry

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sang Hoon; Woo, Sang Gyun; Ju, Sup Youl; Lee, Kyung Jong; Ahn, Jin Ho [Hanyang Univ., Seoul (Korea, Republic of)

    2002-01-01

    The mechanism of etching a tantalum film with pure chlorine plasma was studied using an electron cyclotron resonance plasma system. The emission intensity was measured by using optical emission spectroscopy, and the relative density of Cl radicals was estimated by using Ar actinometry. The chemical reaction between Cl and Ta resulting in the formation of TaCl{sub x} with a low vapor pressure, can proceed only after the removal of the native Ta oxide on the surface. The sputter-assisted dissociation of TaCl{sub x} into TaCl{sub x-1} and atomic Cl plays an important role in Ta etching. The microloading effect can be effectively suppressed by double-step etching and the formation of a passivation layer with a thicker sidewall. Also, 0.15-{mu}m line and space patterns were successfully obtained.

  4. [Study of traction and effect of bonding agents on etched porcelain].

    Science.gov (United States)

    Fernández Bodereau, E

    1990-12-01

    Nowadays many authors suggest the use of porcelain laminate veneer that has come to play an important role in the solution of many esthetic and functional problems. At the moment, it is the alternative treatment to solve some cases with the least dental reduction, the highest fitting and a low cost. To evaluate the tractional resistance done on the porcelain veneer, in which acid etching and connecting agents were applied, I suggest: 1. The resistance of traction carried out on etched porcelain laminate to which an agent of silane join and a resin of connection were applied, was the one that had the best conduct. 2. The tractional resistance carried out on the laminate fronts where a treatment of only silane and resin of connection was applied, was greater where the treatment of silane was employed. 3. The etched with acid both in the adamantine surface and in that of well depurated porcelain, is an important factor to obtain a good retention.

  5. Combining retraction edge lithography and plasma etching for arbitrary contour nanoridge fabrication

    Science.gov (United States)

    Zhao, Yiping; Jansen, Henri; de Boer, Meint; Berenschot, Erwin; Bouwes, Dominique; Gironès, Miriam; Huskens, Jurriaan; Tas, Niels

    2010-09-01

    Edge lithography in combination with fluorine-based plasma etching is employed to avoid the dependence on crystal orientation in single crystal silicon to create monolithic nanoridges with arbitrary contours. This is demonstrated by using a mask with circular structures and Si etching at cryogenic temperature with SF6+O2 plasma mixtures. Initially, the explored etch recipe was used with Cr as the masking material. Although nanoridges with perfect vertical sidewalls have been achieved, Cr causes severe sidewall roughness due to line edge roughness. Therefore, an SU-8 polymer is used instead. Although the SU-8 pattern definition needs further improvement, we demonstrate the possibility of fabricating Si nanoridges of arbitrary contours providing a width below 50 nm and a height between 25 and 500 nm with smooth surface finish. Artifacts in the ridge profile are observed and are mainly caused by the bird's beak phenomenon which is characteristic for the used LOCOS process.

  6. Versatile micropipette technology based on deep reactive ion etching and anodic bonding for biological applications

    International Nuclear Information System (INIS)

    Lopez-Martinez, M J; Campo, E M; Esteve, J; Plaza, J A; Caballero, D; Errachid, A; Fernandez, E

    2009-01-01

    A novel, versatile and robust technology to manufacture transparent micropipettes, suitable for biological applications, is presented here. Up to three deep reactive ion etchings have been included in the manufacturing process, providing highly controlled geometry of reservoirs, connection cavities and inlet ports. Etching processes have been used for the definition of chip and reservoir and for nozzle release. Additionally, special design considerations have been developed to facilitate micro-to-macro fluidic connections. Implementation of anodic bonding to seal a glass substrate to the fluidic structure etched on Si, allowed observation of the flow inside the reservoir. Flow tests have been conducted by filling channels with different fluids. Flow was observed under an optical microscope, both during capillary filling and also during pumping. Dispensing has been demonstrated by functionalizing the surface of an AFM cantilever. Mechanical tests performed by piercing live mouse cells with FIB-sharpened micropipettes suggest the design is sturdy for biological piercing applications

  7. Effect of Current Density on Optical Properties of Anisotropic Photoelectrochemical Etched Silicon (110)

    Science.gov (United States)

    Amirhoseiny, M.; Hassan, Z.; Ng, S. S.

    2012-08-01

    Photoelectrochemical etched Si layers were prepared on n-type (110) oriented silicon wafer. The photoluminescence (PL), Fourier transformed infrared (FTIR) absorption and Raman spectroscopies of etched Si (110) at two different current densities were studied. Both samples showed PL peak in the visible spectral range situated from 650 nm to 750 nm. The corresponding changes in Raman spectra at different current density are discussed. The blue shift in the PL and Raman peaks is consequent of the quantum confinement effect and defect states of surface Si nanocrystallites complexes and hydrogen atoms of the photoelectrochemical etched Si (110) samples. The attenuated total reflection (ATR) results show both hydrogen and oxygen related IR modes in the samples which can be used to explain the PL effect.

  8. Effect of sulfuric acid etching of polyetheretherketone on the shear bond strength to resin cements.

    Science.gov (United States)

    Sproesser, Oliver; Schmidlin, Patrick R; Uhrenbacher, Julia; Roos, Malgorzata; Gernet, Wolfgang; Stawarczyk, Bogna

    2014-10-01

    To examine the influence of etching duration on the bond strength of PEEK substrate in combination with different resin composite cements. In total, 448 PEEK specimens were fabricated, etched with sulfuric acid for 5, 15, 30, 60, 90, 120, and 300 s and then luted with two conventional resin cements (RelyX ARC and Variolink II) and one self-adhesive resin cement (Clearfil SA Cement) (n = 18/subgroup). Non-etched specimens served as the control group. Specimens were stored in distilled water for 28 days at 37°C and shear bond strengths were measured. Data were analyzed nonparametrically using Kruskal-Wallis-H (p sulfuric acid seems to be suitable and effective for PEEK surface pre-treatment, further investigations are required to examine the effect of other adhesive systems and cements.

  9. Special equipment for etching nitrocellulose film

    International Nuclear Information System (INIS)

    Domanus, J.C.

    1983-08-01

    Nitrocellulose film and converter screens used for neutron radiography are described. Difficulties in visualization of radiographs on those films are mentioned. Because there is no equipment for etching nitrocellulose film available on the market Risoe has designed and produced such equipment at an estimated cost of Dkr. 15,000. Design criteria for this equipment are given and its performance described

  10. Transport through track etched polymeric blend membrane

    Indian Academy of Sciences (India)

    Polymer blends of polycarbonate (PC) and polysulphone (PSF) having thickness, 27 m, are prepared by solution cast method. The transport properties of pores in a blend membrane are examined. The pores were produced in this membrane by a track etching technique. For this purpose, a thin polymer membrane was ...

  11. Dopant Selective Reactive Ion Etching of Silicon Carbide

    Science.gov (United States)

    Okojie, Robert (Inventor)

    2016-01-01

    A method for selectively etching a substrate is provided. In one embodiment, an epilayer is grown on top of the substrate. A resistive element may be defined and etched into the epilayer. On the other side of the substrate, the substrate is selectively etched up to the resistive element, leaving a suspended resistive element.

  12. Method of plastic track detector electrochemical etching

    International Nuclear Information System (INIS)

    D'yakov, A.A.

    1984-01-01

    The review of studies dealing with the development of the method for the electro-chemical etching (ECE) of the plastic track detectors on the base of polyethy-leneterephthalate (PET) and polycarbonate (PC) is given. Physical essence of the method, basic parameters of the processes, applied equipment and methods of measurement automation are considered. The advantages of the method over the traditional chemical etching are pointed out. Recommendations on the detector operation modes when detecting fission fragments, α-particles and fast neutrons are given. The ECE method is based on the condition that during chemical etching the high-voltage sound frequency alternating electric field is applied to the detector. In this case the detector serves as an isolating layer betWeen two vessels with etching solution in which high-voltage electrode are submerged. At a fixed electric field potential higher (over than the threshold value) at the end of the etching track cone atree-like discharge spot arises. It is shown that when PET is used for fast neutron detection it is advisable to apply for ECE the PEW solution (15g KOH+40 g C 2 H 2 OH + 45g H 2 O) the field potential should constitute 30 kVxcm -1 at the freqUency of 9 kHz. In the case of fission fragment detection Using ECE and PC the following ECE conditions are recommended: 30% KOH etcher, field potential of 10 kVxcm -1 , 2-4 kHz frequency. It is concluded that the ECE method permits considerably eXtend the sphere of plastic track detector application for detecting ionizing particles,

  13. SEMICONDUCTOR TECHNOLOGY: TaN wet etch for application in dual-metal-gate integration technology

    Science.gov (United States)

    Yongliang, Li; Qiuxia, Xu

    2009-12-01

    Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that TaN is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the TaN surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region.

  14. Effect of MTAD on the shear bond strength of self-etch adhesives to dentin

    Directory of Open Access Journals (Sweden)

    Vajihesadat Mortazavi

    2012-01-01

    Full Text Available Background: As the use of different irrigants to eliminate residual debris and smear layer in the field of endodontic is unavoidable, by considering the effect of irrigants on the bond strength of resin composite restorations, this study was designed to evaluate the effect of a mixture of a tetracycline isomer, an acid, and a detergent (MTAD on the shear bond strength of two self-etch adhesives, Clearfil SE Bond and Adper Prompt L- Pop to dentin. Materials and Methods: The crowns of 80 extracted premolars were transversally sectioned to expose dentin. Flat dentin surfaces were wet abraded with 320-grit abrasive paper and randomly assigned to eight groups according to two self-etch adhesive and four dentin surface treatments: direct application over smear layer (no treatment, etching with 35% phosphoric acid for 15s, 1 min 5.25% NaOCl/1 min MTAD and 20min 1.3% NaOCl/5min MTAD. Shear bond strength was tested 24 h after storage in distilled water at 37°C in incubator. Data were analyzed using one-way ANOVA followed by duncan post-hoc (α=0.05. Results: Phosphoric acid etching prior to SE Bond application significantly decreased the shear bond strength to dentin (P<0.05. Application of MTAD clinical protocol (20min 1.3% NaOCl/5min MTAD did not significantly decrease the shear bond strength of self-etch adhesives to dentin (P=0.745 Conclusions: Based on the results of present investigation, it seems that the use of clinical protocol of 1.3% NaOCl as a root canal irrigant and a 5-min application of MTAD as a final rinse to remove the smear layer has no adverse effect on the shear bond strength of self-etch adhesives to dentin.

  15. Effect of MTAD on the shear bond strength of self-etch adhesives to dentin.

    Science.gov (United States)

    Mortazavi, Vajihesadat; Khademi, Abbasali; Khosravi, Kazem; Fathi, Mohammadhossein; Ebrahimi-Chaharom, Mohammadesmaeil; Shahnaseri, Shirin; Khalighinejad, Navid; Badrian, Hamid

    2012-01-01

    As the use of different irrigants to eliminate residual debris and smear layer in the field of endodontic is unavoidable, by considering the effect of irrigants on the bond strength of resin composite restorations, this study was designed to evaluate the effect of a mixture of a tetracycline isomer, an acid, and a detergent (MTAD) on the shear bond strength of two self-etch adhesives, Clearfil SE Bond and Adper Prompt L- Pop to dentin. The crowns of 80 extracted premolars were transversally sectioned to expose dentin. Flat dentin surfaces were wet abraded with 320-grit abrasive paper and randomly assigned to eight groups according to two self-etch adhesive and four dentin surface treatments: direct application over smear layer (no treatment), etching with 35% phosphoric acid for 15s, 1 min 5.25% NaOCl/1 min MTAD and 20min 1.3% NaOCl/5min MTAD. Shear bond strength was tested 24 h after storage in distilled water at 37°C in incubator. Data were analyzed using one-way ANOVA followed by duncan post-hoc (α=0.05). Phosphoric acid etching prior to SE Bond application significantly decreased the shear bond strength to dentin (P<0.05). Application of MTAD clinical protocol (20min 1.3% NaOCl/5min MTAD) did not significantly decrease the shear bond strength of self-etch adhesives to dentin (P=0.745) Based on the results of present investigation, it seems that the use of clinical protocol of 1.3% NaOCl as a root canal irrigant and a 5-min application of MTAD as a final rinse to remove the smear layer has no adverse effect on the shear bond strength of self-etch adhesives to dentin.

  16. Effect of a plant-based hemostatic agent on microleakage of self-etching adhesives.

    Science.gov (United States)

    Arslan, Soley; Ertaş, Hüseyin; Zorba, Yahya-Orçun

    2013-01-01

    This in vitro study evaluated the effect of Ankaferd Blood Stopper (ABS) contamination on the microleakage of one-step and two-step self-etching adhesives. Class V cavities were prepared at the cemento-enamel junction on both buccal and lingual surfaces of 60 freshly extracted human molars. Teeth were randomly assigned into three groups according to contamination material applied (Group I, no contamination; Group II, blood contamination; Group III, ABS contamination). In contaminated groups, one drop of blood and ABS solution was applied directly to the dentin surface and air-dried. Each group was further divided into two subgroups according to bonding agent used [Group A, Clearfil SE Bond (two-step self-etching adhesive); Group B, Adper Easy One (one-step self-etching adhesive)]. Adhesive materials were applied according to the manufacturers' recommendations. The specimens were restored using a universal microhybrid composite (Arabesk). After thermocycling (5000x, 5°C - 55°C) and immersion in a 0.5% basic fuchsin, dye penetration was evaluated under a stereomicroscope. Statistical analysis was performed with Kruskal-Wallis and Mann-Whitney U tests at p self-etching adhesive was applied to blood- and ABS-contaminated dentin. However, when a two-step self etching adhesive was used, microleakage was observed only following blood contamination, not following ABS contamination. Although, blood contamination before adhesive application resulted in increased microleakage with both one-step and two-step self-etching adhesive systems, ABS contamination did not affect microleakage when a two-step self-ething adhesive system was used.

  17. Comparative Analysis of in vitro Performance of Total-Etch and Self-Etch Adhesives

    Directory of Open Access Journals (Sweden)

    Timur V. Melkumyan

    2016-12-01

    Full Text Available The aim of the study was in vitro assessment of shear bond strength and micro-leakage after application of total-etch and self-etch adhesive systems. Materials and Methods: Four adhesive systems were chosen for assessment of adhesion performance: Contax (DMG, GmbH, Bond Force (Tokuyama Dental Corp. Japan Mfr, Te-Econom Bond (Ivoclar Vivadent, Liechtenstein and Swisstec SL Bond (Coltene, Switzerland. The assessment of bond strength was performed on 20 tooth samples, which were prepared in accordance with the UltraTest technique for shear bond strength (SBS estimation. The test was conducted at a crosshead speed of 1.0 mm/min and results were fixed in kilograms. The assessment of SBS was performed on enamel and dentin separately. Microleakage assessment of self-etch and total-etch adhesive systems was performed on 20 extracted non-carious upper human premolars with immersion in 1% methylene blue solution after thermocycling. Results: Good SBS results and microleakage values on the dentin substrate were obtained after application of the Contax self-etch bonding agent. But the values of bond strength to enamel and the extent of dye penetration within the composite-enamel interface were still better with the total-etch approach.

  18. An area selective and anisotropic etching of Si by synchrotron radiation excitation; Effects of introducing O[sub 2] molecules

    Energy Technology Data Exchange (ETDEWEB)

    Goto, Takashi; Kitamura, Osamu; Terakado, Shingo; Suzuki, Shigeo (Sanyo Electric Co., Ltd., Tsukuba, Ibaraki (Japan). Tsukuba Research Center); Tanaka, Kenichiro

    1992-12-01

    Single crystalline silicon was photochemically etched by synchrotron radiation (SR) in the presence of reactive species produced by microwave discharge. The etching gases were a mixture of SF[sub 6] and Ar. We attempted to introduce O[sub 2] gas in order to increase the area selectivity by protecting the nonirradiated area. It was found that the introduction of O[sub 2] molecules was very effective in depressing the etching of a nonirradiated area resulting in high area selectivity. Also an anisotropic feature of c-Si was obtained by addition of O[sub 2] molecules and submicron patterning was successfully performed using a stencil mask. The effect of O[sub 2] molecules was investigated by the measurement of the spectra of total electron yield and Auger electrons. It seems that the formation of an oxide layer on c-Si surface played an important role in the area-selective etching. (author).

  19. The effect of SF6 addition in a Cl2/Ar inductively coupled plasma for deep titanium etching

    Science.gov (United States)

    Laudrel, E.; Tillocher, T.; Meric, Y.; Lefaucheux, P.; Boutaud, B.; Dussart, R.

    2018-05-01

    Titanium is a material of interest for the biomedical field and more particularly for body implantable devices. Titanium deep etching by plasma was carried out in an inductively coupled plasma with a chlorine-based chemistry for the fabrication of titanium-based microdevices. Bulk titanium etch rate was first studied in Cl2/Ar plasma mixture versus the source power and the self-bias voltage. The plasma was characterized by Langmuir probe and by optical emission spectroscopy. The addition of SF6 in the plasma mixture was investigated. Titanium etch rate was optimized and reached a value of 2.4 µm · min-1. The nickel hard mask selectivity was also enhanced. The etched titanium surface roughness was reduced significantly.

  20. Piezoelectric evaluation of ion beam etched Pb(Zr,Ti)O3 thin films by piezoresponse force microscopy

    International Nuclear Information System (INIS)

    Legrand, C.; Da Costa, A.; Desfeux, R.; Soyer, C.; Remiens, D.

    2007-01-01

    The evolution of piezoelectric properties of Pb(Zr,Ti)O 3 (PZT) thin films after ion beam etching have been investigated at the nanoscale level by piezoelectric force microscopy. A comparison of the piezoelectric properties on etched and unetched films is realized. Piezoelectric contrasts imaging evidences a modification of the domain architecture at the film surface. Local piezoelectric hysteresis loops measurements on grains indicate that the coercive voltage for switching is much higher for the etched films (2.3 V) compared to the unetched ones (1.0 V) while the average piezoelectric activity is slightly lower. The results are explained in terms of grain-damaging during etching and domain-wall pinning

  1. Attachment and spreadout study of 3T3 cells onto PP track etched films

    International Nuclear Information System (INIS)

    Smolko, Eduardo; Mazzei, Ruben; Tadey, Daniel; Lombardo, Daniel

    2001-01-01

    Polymer surface modifications are obtained by the application of radiation treatments and other physico-chemical methods: fission fragment (ff) irradiation and etching. The biocompatibility of the surface is then observed by cell seeding and cell adhesion experiments. Approaches to improvement of the cell adhesion are obtained by different methods: for example, in PS, cell adhesion is improved after ion implantation; in PMMA, after bombarding the polymer, the surface is reconditioned with surfactants and proteins and in PVDF, cell adhesion is assayed on nuclear tracks membranes. In this work, we obtained important cell adhesion improvements in PP films by irradiation with swift heavy ions and subsequent etching of the nuclear tracks. We use BOPP (isotactic -25 μm thickness). Irrradiations were performed with a Cf-252 californium ff source. The source has a heavy ff and a light one, with 160-200 MeV energy divided among them corresponding to ff