WorldWideScience

Sample records for surface air-exposed si

  1. Surface potential distribution and airflow performance of different air-exposed electrode plasma actuators at different alternating current/direct current voltages

    International Nuclear Information System (INIS)

    Yang, Liang; Yan, Hui-Jie; Qi, Xiao-Hua; Hua, Yue; Ren, Chun-Sheng

    2015-01-01

    Asymmetric surface dielectric barrier discharge (SDBD) plasma actuators have been intensely studied for a number of years due to their potential applications for aerodynamic control. In this paper, four types of actuators with different configurations of exposed electrode are proposed. The SDBD actuators investigated are driven by dual-power supply, referred to as a fixed AC high voltage and an adjustable DC bias. The effects of the electrode structures on the dielectric surface potential distribution, the electric wind velocity, and the mean thrust production are studied, and the dominative factors of airflow acceleration behavior are revealed. The results have shown that the actions of the SDBD actuator are mainly dependent on the geometry of the exposed electrode. Besides, the surface potential distribution can effectively affect the airflow acceleration behavior. With the application of an appropriate additional DC bias, the surface potential will be modified. As a result, the performance of the electric wind produced by a single SDBD can be significantly improved. In addition, the work also illustrates that the actuators with more negative surface potential present better mechanical performance

  2. Fe3Si surface coating on SiFe steel

    International Nuclear Information System (INIS)

    Schneeweiss, O.; Pizurova, N.; Jiraskova, Y.; Zak, T.; Cornut, B.

    2000-01-01

    Fe 3 Si layers were prepared using chemical vapor deposition of Si on the surface of Go steel and its subsequent heat treatment. The changes in the structure and phase composition after different heat treatment conditions have been analyzed. The coating is characterized by high hardness, good corrosion resistance, high electrical resistivity, and the spin texture which differs from the steel substrate

  3. On the structure of Si(100) surface

    DEFF Research Database (Denmark)

    Back, Seoin; Schmidt, Johan Albrecht; Ji, Hyunjun

    2013-01-01

    We revisit a dangling theoretical question of whether the surface reconstruction of the Si(100) surface would energetically favor the symmetric or buckled dimers on the intrinsic potential energy surfaces at 0 K. This seemingly simple question is still unanswered definitively since all existing...... of the electron-electron correlation as well as proper multireference wave functions when exploring the extremely delicate potential energy surfaces of the reconstructed Si(100) surface. (C) 2013 AIP Publishing LLC....

  4. Electrical conduction of Si/indium tin oxide/Si junctions fabricated by surface activated bonding

    Science.gov (United States)

    Liang, Jianbo; Ogawa, Tomoki; Hara, Tomoya; Araki, Kenji; Kamioka, Takefumi; Shigekawa, Naoteru

    2018-02-01

    The electrical properties of n+-Si//indium tin oxide (ITO)/n+-Si, n+-Si//ITO/p+-Si, and p+-Si//ITO/n+-Si junctions fabricated by surface activated bonding (SAB) were investigated. The current-voltage (I-V) characteristics of n+-Si//ITO/n+-Si, n+-Si//ITO/p+-Si, and p+-Si//ITO/n+-Si junctions showed excellent linear properties. The interface resistances of n+-Si//ITO/n+-Si, n+-Si//ITO/p+-Si, and p+-Si//ITO/n+-Si junctions were found to be 0.030, 0.025, and 0.029 Ω·cm2, respectively, which are lower than required for concentrator photovoltaics. The interface resistances of all the junctions increased with increasing annealing temperature. The degradation of the interface resistance is lower in n+-Si//ITO/n+-Si junctions than in n+-Si//ITO/p+-Si and p+-Si//ITO/n+-Si junctions, when the annealing temperature is higher than 100 °C. These results demonstrate that the ITO thin film as an intermediate layer has high potential application for the connection of subcells in the fabrication of tandem solar cells.

  5. SiO adsorption on a p(2 × 2) reconstructed Si(1 0 0) surface

    NARCIS (Netherlands)

    Violanda, M.|info:eu-repo/dai/nl/304840262; Rudolph, H.|info:eu-repo/dai/nl/304830496

    2009-01-01

    We have investigated the adsorption mechanism of SiO molecule incident on a clean Si(1 0 0) p(2 × 2) reconstructed surface using density functional theory based methods. Stable adsorption geometries of SiO on Si surface, as well as their corresponding activation and adsorption energies are

  6. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)

    OpenAIRE

    Abe Shunsuke; Handa Hiroyuki; Takahashi Ryota; Imaizumi Kei; Fukidome Hirokazu; Suemitsu Maki

    2010-01-01

    Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD) and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111)/Si(111) is Si-terminated before the graphitization, and ...

  7. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111/Si(111

    Directory of Open Access Journals (Sweden)

    Abe Shunsuke

    2010-01-01

    Full Text Available Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111 thin films on Si(111 has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111/Si(111 is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001 proceeds.

  8. Fermi surfaces of YRu2Si2 and LaRu2Si2

    International Nuclear Information System (INIS)

    Settai, R.; Ikezawa, H.; Toshima, H.; Takashita, M.; Ebihara, T.; Sugawara, H.; Kimura, T.; Motoki, K.; Onuki, Y.

    1995-01-01

    We have measured the de Haas-van Alphen effect of YRu 2 Si 2 and LaRu 2 Si 2 to clarify the Fermi surfaces and cyclotron masses. Main hole-Fermi surfaces of both compounds with a distorted ellipsoid shape are similar, occupying about half of the Brillouin zone. The small hole-Fermi surfaces with the shape of a rugby ball are three in number for LaRu 2 Si 2 , and one for YRu 2 Si 2 . An electron-Fermi surface consists of a doughnut like shape for LaRu 2 Si 2 , while a cylinder along the [001] direction and a multiply-connected shape exist for YRu 2 Si 2 . The cyclotron masses of YRu 2 Si 2 are a little larger than those of LaRu 2 Si 2 . ((orig.))

  9. 3C-SiC nanocrystal growth on 10° miscut Si(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Deokar, Geetanjali, E-mail: gitudeo@gmail.com [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); D' Angelo, Marie; Demaille, Dominique [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Cavellin, Catherine Deville [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil F-94010 (France)

    2014-04-01

    The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO{sub 2} thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO{sub 2} atmosphere. The influence of the atomic steps at the vicinal SiO{sub 2}/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO{sub 2} pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth. - Highlights: • Synthesis of 3C-SiC nanocrystals epitaxied on miscut-Si using a simple technique • Evidence of domain matching epitaxy at the SiC/Si interface • SiC growth proceeds along the (001) plane of host Si. • Substantial enhancement of the SiC nanocrystal density due to the miscut • Effect of the process parameters (CO{sub 2} pressure and annealing duration)

  10. Kinetics and thermodynamics of Si(111) surface nitridation in ammonia

    Science.gov (United States)

    Mansurov, Vladimir G.; Malin, Timur V.; Galitsyn, Yurij G.; Shklyaev, Alexander A.; Zhuravlev, Konstantin S.

    2016-05-01

    Kinetics and thermodynamics of Si(111) surface nitridation under an ammonia flux at different substrate temperatures are investigated by reflection high-energy electron diffraction. Two different stages of the nitridation process were revealed. The initial stage is the fast (within few seconds) formation of ordered two-dimensional SiN phase, occuring due to the topmost active surface Si atom (Sisurf) interaction with ammonia molecules. It is followed by the late stage consisting in the slow (within few minutes) amorphous Si3N4 phase formation as a result of the interaction of Si atoms in the lattice site (Siinc) with chemisorbed ammonia molecules. It was found that the ordered SiN phase formation rate decreases, as the temperature increases. The kinetic model of the initial stage was developed, in which the ordered SiN phase formation is the two-dimensional phase transition in the lattice gas with SiN cells. The enthalpy of the active surface Si atom generation on the clean Si(111) surface was estimated to be about 1.5 eV. In contrast, the amorphous Si3N4 phase formation is the normal (thermally activated) chemical process with the first-order kinetics, whose activation energy and pre-exponential factor are 2.4 eV and 108 1/s, respectively.

  11. Reactions between monolayer Fe and Si(001) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Hasegawa, M.; Kobayashi, N.; Hayashi, N. [Electrotechnical Lab., Tsukuba, Ibaraki (Japan)

    1997-03-01

    Reactions between 1.5 monolayer(ML) Fe deposited on Si(001)-2x1 and -dihydride surfaces were studied in situ by reflection high-energy electron diffraction and time-of-flight ion scattering spectrometry with the use of 25 keV H ions. The reactions between Fe and Si which were successively deposited on Si(001)-dihydride surface were also studied. After the room temperature deposition Fe reacted with Si(001)-2x1 substrate resulting in the formation of polycrystalline Fe5Si3. By annealing to 560-650degC composite heteroepitaxial layer of both type A and type B {beta}-FeSi2 was formed. On the dihydride surface polycrystalline Fe was observed after 1.5ML Fe deposition at room temperature, and reaction between Fe and Si(001)-dihydride surface is not likely at room temperature. We observed 3D rough surface when we deposited only Fe layer on the dihydride surface and annealed above 700degC. The hydrogen termination of Si(001) surface prevents the deposited Fe from diffusing into the substrate below 500degC, however the annealing above 710degC leads to the diffusion. We obtained 2D ordered surface, which showed 3x3 RHEED pattern as referenced to the primitive unreconstructed Si(001) surface net, when we deposited 2.5ML Fe and 5.8ML Si successively onto Si(001)-dihydride surface and annealed to 470degC. (author)

  12. Effect of PECVD SiNx/SiOy Nx –Si interface property on surface passivation of silicon wafer

    International Nuclear Information System (INIS)

    Jia Xiao-Jie; Zhou Chun-Lan; Zhou Su; Wang Wen-Jing; Zhu Jun-Jie

    2016-01-01

    It is studied in this paper that the electrical characteristics of the interface between SiO y N x /SiN x stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiO y N x layer on interface parameters, such as interface state density Di t and fixed charge Q f , and the surface passivation quality of silicon are observed. Capacitance–voltage measurements reveal that inserting a thin SiO y N x layer between the SiN x and the silicon wafer can suppress Q f in the film and D it at the interface. The positive Q f and D it and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiO y N x film increasing. Prepared by deposition at a low temperature and a low ratio of N 2 O/SiH 4 flow rate, the SiO y N x /SiN x stacks result in a low effective surface recombination velocity (S eff ) of 6 cm/s on a p-type 1 Ω·cm–5 Ω·cm FZ silicon wafer. The positive relationship between S eff and D it suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. (paper)

  13. Surface engineering of SiC via sublimation etching

    International Nuclear Information System (INIS)

    Jokubavicius, Valdas; Yazdi, Gholam R.; Ivanov, Ivan G.; Niu, Yuran; Zakharov, Alexei; Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa

    2016-01-01

    Highlights: • Comparison of 6H-, 4H- and 3C-SiC sublimation etching. • Effects of Si-C and Si-C-Ta chemical systems on etching mechanisms. • Effect of etching ambient on surface reconstruction. • Application of etched 4H-SiC surface for the growth of graphene nanoribbons is illustrated. - Abstract: We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10 −5 mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  14. Surface engineering of SiC via sublimation etching

    Energy Technology Data Exchange (ETDEWEB)

    Jokubavicius, Valdas, E-mail: valjo@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden); Yazdi, Gholam R.; Ivanov, Ivan G. [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden); Niu, Yuran; Zakharov, Alexei [Max Lab, Lund University, S-22100 Lund (Sweden); Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden)

    2016-12-30

    Highlights: • Comparison of 6H-, 4H- and 3C-SiC sublimation etching. • Effects of Si-C and Si-C-Ta chemical systems on etching mechanisms. • Effect of etching ambient on surface reconstruction. • Application of etched 4H-SiC surface for the growth of graphene nanoribbons is illustrated. - Abstract: We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10{sup −5} mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  15. Second harmonic generation spectroscopy on Si surfaces and interfaces

    DEFF Research Database (Denmark)

    Pedersen, Kjeld

    2010-01-01

    Optical second harmonic generation (SHG) spectroscopy studies of Si(111) surfaces and interfaces are reviewed for two types of systems: (1) clean 7 x 7 and root 3 x root 3-Ag reconstructed surfaces prepared under ultra-high vacuum conditions where surface states are excited and (2) interfaces...... in silicon-on-insulator (SOI) structures and thin metal films on Si surfaces where several interfaces contribute to the SHG. In all the systems resonances are seen at interband transitions near the bulk critical points E-1 and E-2. On the clean surfaces a number of resonances appear below the onset of bulk...

  16. Cu diffusion across a clean Si(111) surface

    CERN Document Server

    Dolbak, A E; Olshanetskij, B Z

    2001-01-01

    Cu diffusion across a clean Si(111) surface has been studied by the Auger electron spectroscopy and the low energy electron diffraction. It has been established that enhanced copper density areas with noticeable boundaries manifest themselves and a Si(111) - 5 x 5 - Cu surface phase is formed as a result of diffusion. It has been shown that the copper transport along Si(111) surface goes on according to a solid state spreading process, which is known as the unwinding carpet mechanism. The temperature dependence for the Cu diffusion coefficients D sub C sub u on the Si(111) surface is obtained and this dependence takes the form: D sub C sub u = 10 sup 4 exp(-1.9/kT) cm sup 2 /s

  17. On the wettability diversity of C/SiC surface: Comparison of the ground C/SiC surface and ablated C/SiC surface from three aspects

    Science.gov (United States)

    Wu, M. L.; Ren, C. Z.; Xu, H. Z.

    2016-11-01

    The coefficient of thermal conductivity was influenced by the wetting state of material. The wetting state usually depends on the surface wettability. C/SiC is a promising ceramic composites with multi-components. The wettability of C/SiC composites is hard to resort to the classical wetting theory directly. So far, few investigations focused on C/SiC surface wettability diversity after different material removal processes. In this investigation, comparative studies of surface wettability of ground C/SiC surface and laser-ablated C/SiC surface were carried out through apparent contact angle (APCA) measurements. The results showed that water droplets easily reached stable state on ground C/SiC surface; while the water droplets rappidly penetrated into the laser-ablated C/SiC surface. In order to find out the reason for wettability distinctions between the ground C/SiC surface and the laser-ablated C/SiC surface, comparative studies on the surface micro-structure, surface C-O-Si distribution, and surface C-O-Si weight percentage were carried out. The results showed that (1) A large number of micro cracks in the fuzzy pattern layer over laser-ablated C/SiC surfaces easily destoried the surface tension of water droplets, while only a few cracks existed over the ground C/SiC surfaces. (2) Chemical components (C, O, Si) were non-uniformly distributed on ground C/SiC surfaces, while the chemical components (C, O, Si) were uniformly distributed on laser-ablated C/SiC surfaces. (3) The carbon weight percentage on ground C/SiC surfaces were higher than that on laser-ablated C/SiC surfaces. All these made an essential contribution to the surface wettability diversity of C/SiC surface. Although more investigations about the quantitative influence of surface topography and surface chemical composition on composites wettability are still needed, the conslusion can be used in application: the wettability of C/SiC surface can be controlled by different material removal process

  18. Roughness evolution of Si surfaces upon Ar ion erosion

    NARCIS (Netherlands)

    de Rooij-Lohmann, Vita; Kozhevnikov, I. V.; Peverini, L.; Ziegler, E.; Cuerno, R.; F. Bijkerk,; Yakshin, A. E.

    2010-01-01

    We studied the roughness evolution of Si surfaces upon Ar ion erosion in real time. Following the theory of surface kinetic roughening, a model proposed by Majaniemi was used to obtain the value of the dynamic scaling exponent beta from our data. The model was found to explain both the observed

  19. Impact of organic overlayers on a-Si:H/c-Si surface potential

    KAUST Repository

    Seif, Johannes P.

    2017-04-11

    Bilayers of intrinsic and doped hydrogenated amorphous silicon, deposited on crystalline silicon (c-Si) surfaces, simultaneously provide contact passivation and carrier collection in silicon heterojunction solar cells. Recently, we have shown that the presence of overlaying transparent conductive oxides can significantly affect the c-Si surface potential induced by these amorphous silicon stacks. Specifically, deposition on the hole-collecting bilayers can result in an undesired weakening of contact passivation, thereby lowering the achievable fill factor in a finished device. We test here a variety of organic semiconductors of different doping levels, overlaying hydrogenated amorphous silicon layers and silicon-based hole collectors, to mitigate this effect. We find that these materials enhance the c-Si surface potential, leading to increased implied fill factors. This opens opportunities for improved device performance.

  20. Room temperature wafer direct bonding of smooth Si surfaces recovered by Ne beam surface treatments

    Science.gov (United States)

    Kurashima, Yuichi; Maeda, Atsuhiko; Takagi, Hideki

    2013-06-01

    We examined the applicability of a Ne fast atom beam (FAB) to surface activated bonding of Si wafers at room temperature. With etching depth more than 1.5 nm, the bonding strength comparable to Si bulk strength was attained. Moreover, we found the improvement of the bonding strength by surface smoothing effect of the Ne FAB. Silicon surface roughness decreased from 0.40 to 0.17 nm rms by applying a Ne FAB of 30 nm etching depth. The bonding strength between surfaces recovered by Ne FAB surface smoothing was largely improved and finally became equivalent to Si bulk strength.

  1. Laser composite surfacing of stainless steel with SiC

    Science.gov (United States)

    Dutta Majumdar, J.; Chandra, B. Ramesh; Nath, A. K.; Manna, I.

    2006-07-01

    In the present study, an attempt has been made to improve wear resistance of AISI 304 stainless steel by laser composite surfacing with SiC. Laser processing has been carried out by pre-deposition of Fe + SiC powders (in the ratio of 85:15 and thickness of 100 m) on AISI 304 stainless steel substrate and subsequently, melting it using a 2 kW continuous wave CO2 laser. Following laser processing, a detailed characterization and evaluation of mechanical/electrochemical properties of the composite layer were undertaken to study the influence of laser processing on the characteristics and properties of the composite layer. Microstructure of the composite layer consisted of uniformly dispersed SiC particles in grain refined -Fe dendrites. Laser composite surfacing led to a significant improvement in microhardness and wear resistance as compared to as-received substrate. However, pitting corrosion property was marginally deteriorated due to laser composite surfacing.

  2. Fluorinated saccharides on the Si(0 0 1) surface

    International Nuclear Information System (INIS)

    Szwajca, Anna; Rapp, Magdalena; Bilska, Monika; Krzywiecki, Maciej; Koroniak, Henryk

    2013-01-01

    The attachment of saccharide molecules directly to silicon surface has been for the first time. Oxygen free silicon surface was functionalized with monosacharides thanks to UV irradiation in acetonitryl solution (254 nm). Selected derivatives of pentofuranose were protected at the C-1 and C-2 position. The remaining hydroxyl group at C-3 or C-5 was suitable for direct attachment to H-terminated Si(0 0 1) surface via Si-O-C bonds. The binding energy of the saccharide to the Si surface was investigated by quantum mechanical calculations method. The Parametric Method 5 (PM5) calculations confirmed that the formation of Si-O-C bonds was chemically possible. Synthesis of new fluorinated carbohydrates has been described. The resulting monolayers were characterized by Atomic Force Microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Attenuated Total Reflection (ATR) infrared spectroscopy. The effect of incorporating fluorine atom or CF 3 group into self-assembled monosaccharide monolayers was studied using a water contact angle measurements. The resulting surface wettability of different fluorinated components on one kind of planar substrate enables an answer which of derivative is required for the preparation of the hydrophobic monolayer.

  3. Dimer-flipping-assisted diffusion on a Si(001) surface

    International Nuclear Information System (INIS)

    Zi, J.; Min, B. J.; Lu, Y.; Wang, C. Z.; Ho, K. M.

    2000-01-01

    The binding sites and diffusion pathways of Si adatoms on a c(4x2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car--Parrinello method. A new diffusion pathway along the trough edge driven by dimer flipping is found with a barrier of 0.74 eV, comparable to that of 0.68 eV along the top of the dimer rows

  4. Investigation of the Si(111) surface in uhv: oxidation and the effect of surface phosphorus

    International Nuclear Information System (INIS)

    Tom, H.W.K.; Zhu, X.D.; Shen, Y.R.; Somorjai, G.A.

    1984-06-01

    We have studied the initial stages of oxidation, the segregation of phosphorus, and the effect of phosphorus on oxidation of the Si(111) 7 x 7 surface using optical second-harmonic generation. We have also observed a (√3 x √3)R30 0 LEED pattern for P on Si

  5. Haemocompatibility evaluation of DLC- and SiC-coated surfaces

    Directory of Open Access Journals (Sweden)

    Nurdin N.

    2003-06-01

    Full Text Available Diamond-like carbon (DLC and silicon carbide (SiC coatings are attractive because of low friction coefficient, high hardness, chemical inertness and smooth finish, which they provide to biomedical devices. Silicon wafers (Siwaf and silicone rubber (Sirub plates were coated using plasma-enhanced chemical vapour deposition (PE-CVD techniques. This article describes: 1- the characterization of modified surfaces using attenuated total reflection-Fourier transform infrared spectroscopy (ATR/FTIR and contact angle measurements, 2- the results of three in-vitro haemocompatibility assays. Coated surfaces were compared to uncoated materials and various substrates such as polymethylmethacrylate (PMMA, polyethylene (LDPE, polydimethylsiloxane (PDMS and medical steel (MS. Thrombin generation, blood platelet adhesion and complement convertase activity tests revealed the following classification, from the most to the least heamocompatible surface: Sirub/ DLC-Sirub/ DLC-Siwaf/ LDPE/ PDMS/ SiC-Siwaf/ Siwaf/ PMMA/ MS. The DLC coating surfaces delayed the clotting time, tended to inhibit the platelet and complement convertase activation, whereas SiC-coated silicon wafer can be considered as thrombogenic. This study has taken into account three events of the blood activation: coagulation, platelet activation and inflammation. The response to those events is an indicator of the in vitro haemocompatibility of the different surfaces and it allows us to select biomaterials for further in vivo blood contacting investigations.

  6. MarsSI: Martian surface data processing information system

    Science.gov (United States)

    Quantin-Nataf, C.; Lozac'h, L.; Thollot, P.; Loizeau, D.; Bultel, B.; Fernando, J.; Allemand, P.; Dubuffet, F.; Poulet, F.; Ody, A.; Clenet, H.; Leyrat, C.; Harrisson, S.

    2018-01-01

    MarsSI (Acronym for Mars System of Information, https://emars.univ-lyon1.fr/MarsSI/, is a web Geographic Information System application which helps managing and processing martian orbital data. The MarsSI facility is part of the web portal called PSUP (Planetary SUrface Portal) developed by the Observatories of Paris Sud (OSUPS) and Lyon (OSUL) to provide users with efficient and easy access to data products dedicated to the martian surface. The portal proposes 1) the management and processing of data thanks to MarsSI and 2) the visualization and merging of high level (imagery, spectral, and topographic) products and catalogs via a web-based user interface (MarsVisu). The portal PSUP as well as the facility MarsVisu is detailed in a companion paper (Poulet et al., 2018). The purpose of this paper is to describe the facility MarsSI. From this application, users are able to easily and rapidly select observations, process raw data via automatic pipelines, and get back final products which can be visualized under Geographic Information Systems. Moreover, MarsSI also contains an automatic stereo-restitution pipeline in order to produce Digital Terrain Models (DTM) on demand from HiRISE (High Resolution Imaging Science Experiment) or CTX (Context Camera) pair-images. This application is funded by the European Union's Seventh Framework Programme (FP7/2007-2013) (ERC project eMars, No. 280168) and has been developed in the scope of Mars, but the design is applicable to any other planetary body of the solar system.

  7. Growth of DySi sub 2 layers on Si surface by high-current Dy-ion implantation

    CERN Document Server

    Cheng, X Q

    2003-01-01

    We report, in this paper, the synthesis of DySi sub 2 layers on Si surfaces by high-current Dy-ion implantation in Si wafers using a metal vapor vacuum arc ion source. It was found that the continuous DySi sub 2 layers could grow at a relatively low formation temperature of 190degC and that the surface morphology varied with the variation of the implantation parameters. The formation mechanism of the equilibrium DySi sub 2 phase as well as the continuous DySi sub 2 layer on Si surface is proposed in terms of ion beam heating and the effect of ion dose on the Dy-ion implantation process. (author)

  8. In-induced stable ordering of stepped Si(553) surface

    Science.gov (United States)

    Chauhan, Amit Kumar Singh; Niazi, Asad; Nair, Lekha; Gupta, Govind

    2015-05-01

    The growth mechanism and adsorbate-induced surface morphology of metal atoms on semiconducting surfaces crucially determines the electronic and physicochemical properties of these metal/semiconductor systems. In this study, we investigate the kinetically controlled growth of indium (In) atoms on the high index stepped Si(553)-7 × 7 surface and the thermal stability of various novel In-induced superstructural phases formed during adsorption/desorption process. Auger electron spectroscopy analysis reveals that In adsorption at room temperature (RT) and at 350 °C, with a controlled incident flux of 0.0016 ML/s, proceeds in the Stranski-Krastanov growth mode where two dimensional (2D)/three dimensional (3D) islands are formed on top of two complete monolayers. At higher substrate temperature up to 450 °C, the growth of In atoms occurs in the form of islands on the bare Si(553) surface, and In coverage is limited to the sub-monolayer regime. During the thermal desorption of the RT grown In/Si(553) system, the In clusters rearrange themselves and an unusual "cluster to layer" transformation occurs on top of the stable monolayer. In situ low energy electron diffraction analysis during adsorption and desorption shows the development of various coverage and temperature dependent In-induced superstructural phases on Si(553) surface, such as: (8 × 2) after annealing at 520 °C with coverage 0.5 ML, (8 × 4) after annealing at 580 °C (∼1 ML coverage) and (553)-7 × 1 + (111)-√3 × √3-R30° at 0.3 ML (630 °C). These adsorbate-induced superstructural phases could potentially be utilized as templates for pattern assisted growth of various exotic 1D/2D structures for optoelectronics and photovoltaic applications.

  9. High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part III: heavy-fluence Co bombardment induced surface topography development

    International Nuclear Information System (INIS)

    Zhang Yanwen; Winzell, Thomas; Zhang Tonghe; Maximov, Ivan A.; Sarwe, Eva-Lena; Graczyk, Mariusz; Montelius, Lars; Whitlow, Harry J.

    1999-01-01

    The surface topography development of Si(1 0 0), Si(1 1 1), oxide/Si and nitride/Si structures under high normal fluence (1x10 16 -2.6x10 18 ions cm -2 ) keV Co metal vapour vacuum arc (MEVVA) irradiation has been investigated by scanning electron microscopy (SEM). The results show that for normal fluences up to ∼10 17 ions cm -2 , the surface topography remains flat. As the fluence increases, pores develop and grow to form a columnar structure. At even higher fluences the columns are eroded to form an acicular structure. Deposition of a silicon dioxide or nitride layer on the Si surface leads to a significant suppression of the onset fluence for the formation of a rough surface. The porous surface could not be transformed to the network of acicular structures or a flat surface by high temperature annealing

  10. Hydrogen generation due to water splitting on Si - terminated 4H-Sic(0001) surfaces

    Science.gov (United States)

    Li, Qingfang; Li, Qiqi; Yang, Cuihong; Rao, Weifeng

    2018-02-01

    The chemical reactions of hydrogen gas generation via water splitting on Si-terminated 4H-SiC surfaces with or without C/Si vacancies were studied by using first-principles. We studied the reaction mechanisms of hydrogen generation on the 4H-SiC(0001) surface. Our calculations demonstrate that there are major rearrangements in surface when H2O approaches the SiC(0001) surface. The first H splitting from water can occur with ground-state electronic structures. The second H splitting involves an energy barrier of 0.65 eV. However, the energy barrier for two H atoms desorbing from the Si-face and forming H2 gas is 3.04 eV. In addition, it is found that C and Si vacancies can form easier in SiC(0001)surfaces than in SiC bulk and nanoribbons. The C/Si vacancies introduced can enhance photocatalytic activities. It is easier to split OH on SiC(0001) surface with vacancies compared to the case of clean SiC surface. H2 can form on the 4H-SiC(0001) surface with C and Si vacancies if the energy barriers of 1.02 and 2.28 eV are surmounted, respectively. Therefore, SiC(0001) surface with C vacancy has potential applications in photocatalytic water-splitting.

  11. In-induced stable ordering of stepped Si(553) surface

    Energy Technology Data Exchange (ETDEWEB)

    Chauhan, Amit Kumar Singh [Physics of Energy Harvesting, (CSIR-NPL) , Dr. K.S. KrishnanRoad, New Delhi -110012 (India); Department of Physics, JMI, New Delhi 110025 (India); Niazi, Asad; Nair, Lekha [Department of Physics, JMI, New Delhi 110025 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting, (CSIR-NPL) , Dr. K.S. KrishnanRoad, New Delhi -110012 (India)

    2015-05-15

    Highlights: • Control growth of In on step Si(553) & thermal stability of novel superstructure. • Influence of temperature on growth modes (SK,VB) under different growth conditions. • In-induced superstructure: (8 × 2), (8 × 4), mixed (553)-7 × 1 + (111)√3 × √3R30° phases. - Abstract: The growth mechanism and adsorbate-induced surface morphology of metal atoms on semiconducting surfaces crucially determines the electronic and physicochemical properties of these metal/semiconductor systems. In this study, we investigate the kinetically controlled growth of indium (In) atoms on the high index stepped Si(553)-7 × 7 surface and the thermal stability of various novel In-induced superstructural phases formed during adsorption/desorption process. Auger electron spectroscopy analysis reveals that In adsorption at room temperature (RT) and at 350 °C, with a controlled incident flux of 0.0016 ML/s, proceeds in the Stranski–Krastanov growth mode where two dimensional (2D)/three dimensional (3D) islands are formed on top of two complete monolayers. At higher substrate temperature up to 450 °C, the growth of In atoms occurs in the form of islands on the bare Si(553) surface, and In coverage is limited to the sub-monolayer regime. During the thermal desorption of the RT grown In/Si(553) system, the In clusters rearrange themselves and an unusual “cluster to layer” transformation occurs on top of the stable monolayer. In situ low energy electron diffraction analysis during adsorption and desorption shows the development of various coverage and temperature dependent In-induced superstructural phases on Si(553) surface, such as: (8 × 2) after annealing at 520 °C with coverage 0.5 ML, (8 × 4) after annealing at 580 °C (∼1 ML coverage) and (553)-7 × 1 + (111)-√3 × √3-R30° at 0.3 ML (630 °C). These adsorbate-induced superstructural phases could potentially be utilized as templates for pattern assisted growth of various exotic 1D/2D structures for

  12. Infrared surface phonon polariton waveguides on SiC Substrate

    Science.gov (United States)

    Yang, Yuchen; Manene, Franklin M.; Lail, Brian A.

    2015-08-01

    Surface plasmon polariton (SPP) waveguides harbor many potential applications at visible and near-infrared (NIR) wavelengths. However, dispersive properties of the metal in the waveguide yields weakly coupled and lossy plasmonic modes in the mid and long wave infrared range. This is one of the major reasons for the rise in popularity of surface phonon polariton (SPhP) waveguides in recent research and micro-fabrication pursuit. Silicon carbide (SiC) is a good candidate in SPhP waveguides since it has negative dielectric permittivity in the long-wave infrared (LWIR) spectral region, indicative that coupling to surface phonon polaritons is realizable. Introducing surface phonon polaritons for waveguiding provides good modal confinement and enhanced propagation length. A hybrid waveguide structure at long-wave infrared (LWIR) is demonstrated in which an eigenmode solver approach in Ansys HFSS was applied. The effect of a three layer configuration i.e., silicon wire on a benzocyclobutene (BCB) dielectric slab on SiC, and the effects of varying their dimensions on the modal field distribution and on the propagation length, is presented.

  13. Surface functionalization and biomedical applications based on SiC

    Energy Technology Data Exchange (ETDEWEB)

    Yakimova, R; Petoral, R M Jr; Yazdi, G R; Vahlberg, C; Spetz, A Lloyd; Uvdal, K [Department of Physics, Chemistry and Biology, Linkoeping University, SE-58183 Linkoeping (Sweden)

    2007-10-21

    The search for materials and systems, capable of operating long term under physiological conditions, has been a strategy for many research groups during the past years. Silicon carbide (SiC) is a material, which can meet the demands due to its high biocompatibility, high inertness to biological tissues and to aggressive environment, and the possibility to make all types of electronic devices. This paper reviews progress in biomedical and biosensor related research on SiC. For example, less biofouling and platelet aggregation when exposed to blood is taken advantage of in a variety of medical implantable materials while the robust semiconducting properties can be explored in surface functionalized bioelectronic devices. (review article)

  14. Surface sputtering in high-dose Fe ion implanted Si

    International Nuclear Information System (INIS)

    Ishimaru, Manabu

    2007-01-01

    Microstructures and elemental distributions in high-dose Fe ion implanted Si were characterized by means of transmission electron microscopy and Rutherford backscattering spectroscopy. Single crystalline Si(0 0 1) substrates were implanted at 350 deg. C with 120 keV Fe ions to fluences ranging from 0.1 x 10 17 to 4.0 x 10 17 /cm 2 . Extensive damage induced by ion implantation was observed inside the substrate below 1.0 x 10 17 /cm 2 , while a continuous iron silicide layer was formed at 4.0 x 10 17 /cm 2 . It was found that the spatial distribution of Fe projectiles drastically changes at the fluence between 1.0 x 10 17 and 4.0 x 10 17 /cm 2 due to surface sputtering during implantation

  15. Pb chains on ordered Si(3 3 5) surface

    International Nuclear Information System (INIS)

    Kisiel, M.; Skrobas, K.; Zdyb, R.; Mazurek, P.; Jalochowski, M.

    2007-01-01

    The electronic band structure of the Si(3 3 5)-Au surface decorated with Pb atoms was studied with angle resolved photoelectron spectroscopy (ARPES) in ultra high vacuum (UHV) conditions. The photoemission spectra were measured in two perpendicular directions, along and across the steps. In the direction parallel to the step edges the ARPES spectra show strongly dispersive electron energy band while in the perpendicular direction there is no electronic dispersion at all. This confirms one-dimensional character of the system. The theoretical band dispersion calculated within a tight-binding model was fitted to that obtained from the experiment

  16. Graphene surface plasmon bandgap based on two dimensional Si gratings

    Directory of Open Access Journals (Sweden)

    Yueke Wang

    2017-11-01

    Full Text Available A graphene/Si system, which is composed of a two-dimensional subwavelength silicon gratings and a graphene sheet, is designed to realize the complete band gap in infrared region for graphene surface plasmons (GSPs theoretically. The complete band gap originates from the strong scatterings, which is caused by the periodical distribution of effective refractive index. The band structure has been calculated using the plane wave expansion method, and full wave numerical simulations are conducted by finite element method. Thanks to the tunable permittivity of graphene, the band structure can be easily tuned, which provides a way to manipulate in-plane GSPs’ propagation.

  17. Plasma processing of the Si(0 0 1) surface for tuning SPR of Au/Si-based plasmonic nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Giangregorio, Maria M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)]. E-mail: michelaria.giangregorio@ba.imip.cnr.it; Losurdo, Maria [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy); Sacchetti, Alberto [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy); Capezzuto, Pio [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy); Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)

    2006-12-15

    Au nanoclusters have been deposited on Si(0 0 1) surfaces by sputtering of a metallic Au target using an Ar plasma. Different wet and dry treatments of the Si(0 0 1) surface, including dipping in HF solution and exposure to H{sub 2} and N{sub 2} plasmas, have been applied and the effects of these treatments on the Au nanoparticles/Si interface, the Au nanoclusters aspect ratio and the surface plasmon resonance (SPR) energy and amplitude are investigated exploiting spectroscopic ellipsometry and atomic force microscopy. It is found that the Au nanoclusters aspect ratio depends on the extent of the Au-Si intermixing. The thicker the Au-Si interface layer, the larger the Au nanoparticles aspect ratio and the red-shift of the SPR peak. Furthermore, SiO{sub 2} and the H{sub 2} plasma treatment inhibit the Si-Au intermixing, while HF-dipping and the N{sub 2} plasma treatment favour Au-Si intermixing, yielding silicide formation which increases the Si wetting by Au.

  18. Experimental and Theoretical Study of the Rotation of Si Ad-dimers on the Si(100) Surface

    DEFF Research Database (Denmark)

    Swartzentruber, B. S.; Smith, A. P.; Jonsson, Hannes

    1996-01-01

    Scanning tunneling microscopy measurements and first principles density functional theory calculations are used to study the rate of the rotational transition of Si ad-dimers on top of the surface dimer rows of Si(100). The rotation rate and the relative population of the two stable orientations ...

  19. Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

    Science.gov (United States)

    Tarasov, I. A.; Visotin, M. A.; Aleksandrovsky, A. S.; Kosyrev, N. N.; Yakovlev, I. A.; Molokeev, M. S.; Lukyanenko, A. V.; Krylov, A. S.; Fedorov, A. S.; Varnakov, S. N.; Ovchinnikov, S. G.

    2017-10-01

    This work investigates the Si/Fe flux ratio (2 and 0.34) influence on the growth of β-FeSi2 polycrystalline thin films on Si(100) substrate at 630 °C. Lattice deformations for the films obtained are confirmed by X-ray diffraction analysis (XRD). The volume unit cell deviation from that of β-FeSi2 single crystal are 1.99% and 1.1% for Si/Fe =2 and Si/Fe =0.34, respectively. Absorption measurements show that the indirect transition ( 0.704 eV) of the Si/Fe =0.34 sample changes to the direct transition with a bandgap value of 0.816 eV for the sample prepared at Si/Fe =2. The absorption spectrum of the Si/Fe =0.34 sample exhibits an additional peak located below the bandgap energy value with the absorption maximum of 0.36 eV. Surface magneto-optic Kerr effect (SMOKE) measurements detect the ferromagnetic behavior of the β-FeSi2 polycrystalline films grown at Si/Fe =0.34 at T=10 K, but no ferromagnetism was observed in the samples grown at Si/Fe =2. Theoretical calculations refute that the cell deformation can cause the emergence of magnetization and argue that the origin of the ferromagnetism, as well as the lower absorption peak, is β-FeSi2 stoichiometry deviations. Raman spectroscopy measurements evidence that the film obtained at Si/Fe flux ratio equal to 0.34 has the better crystallinity than the Si/Fe =2 sample.

  20. Towards modelling the vibrational signatures of functionalized surfaces: carboxylic acids on H-Si(111) surfaces

    Science.gov (United States)

    Giresse Tetsassi Feugmo, Conrard; Champagne, Benoît; Caudano, Yves; Cecchet, Francesca; Chabal, Yves J.; Liégeois, Vincent

    2012-03-01

    In this work, we investigate the adsorption process of two carboxylic acids (stearic and undecylenic) on a H-Si(111) surface via the calculation of structural and energy changes as well as the simulation of their IR and Raman spectra. The two molecules adsorb differently at the surface since the stearic acid simply physisorbs while the undecylenic acid undergoes a chemical reaction with the hydrogen atoms of the surface. This difference is observed in the change of geometry during the adsorption. Indeed, the chemisorption of the undecylenic acid has a bigger impact on the structure than the physisorption of the stearic acid. Consistently, the former is also characterized by a larger value of adsorption energy and a smaller value of the tilting angle with respect to the normal plane. For both the IR and Raman signatures, the spectra of both molecules adsorbed at the surface are in a first approximation the superposition of the spectra of the Si cluster and of the carboxylic acid considered individually. The main deviation from this simple observation is the peak of the stretching Si-H (ν(Si-H)) mode, which is split into two peaks upon adsorption. As expected, the splitting is bigger for the chemisorption than the physisorption. The modes corresponding to atomic displacements close to the adsorption site display a frequency upshift by a dozen wavenumbers. One can also see the disappearance of the peaks associated with the C=C double bond when the undecylenic acid chemisorbs at the surface. The Raman and IR spectra are complementary and one can observe here that the most active Raman modes are generally IR inactive. Two exceptions to this are the two ν(Si-H) modes which are active in both spectroscopies. Finally, we compare our simulated spectra with some experimental measurements and we find an overall good agreement.

  1. Towards modelling the vibrational signatures of functionalized surfaces: carboxylic acids on H-Si(111) surfaces

    International Nuclear Information System (INIS)

    Tetsassi Feugmo, Conrard Giresse; Champagne, Benoît; Liégeois, Vincent; Caudano, Yves; Cecchet, Francesca; Chabal, Yves J

    2012-01-01

    In this work, we investigate the adsorption process of two carboxylic acids (stearic and undecylenic) on a H-Si(111) surface via the calculation of structural and energy changes as well as the simulation of their IR and Raman spectra. The two molecules adsorb differently at the surface since the stearic acid simply physisorbs while the undecylenic acid undergoes a chemical reaction with the hydrogen atoms of the surface. This difference is observed in the change of geometry during the adsorption. Indeed, the chemisorption of the undecylenic acid has a bigger impact on the structure than the physisorption of the stearic acid. Consistently, the former is also characterized by a larger value of adsorption energy and a smaller value of the tilting angle with respect to the normal plane. For both the IR and Raman signatures, the spectra of both molecules adsorbed at the surface are in a first approximation the superposition of the spectra of the Si cluster and of the carboxylic acid considered individually. The main deviation from this simple observation is the peak of the stretching Si-H (ν(Si-H)) mode, which is split into two peaks upon adsorption. As expected, the splitting is bigger for the chemisorption than the physisorption. The modes corresponding to atomic displacements close to the adsorption site display a frequency upshift by a dozen wavenumbers. One can also see the disappearance of the peaks associated with the C=C double bond when the undecylenic acid chemisorbs at the surface. The Raman and IR spectra are complementary and one can observe here that the most active Raman modes are generally IR inactive. Two exceptions to this are the two ν(Si-H) modes which are active in both spectroscopies. Finally, we compare our simulated spectra with some experimental measurements and we find an overall good agreement. (paper)

  2. Metastability of a-SiO{sub x}:H thin films for c-Si surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Serenelli, L., E-mail: luca.serenelli@enea.it [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Martini, L. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Imbimbo, L. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Asquini, R. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Menchini, F.; Izzi, M.; Tucci, M. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy)

    2017-01-15

    Highlights: • a-SiO{sub x}:H film deposition by RF-PECVD is optimized from SiH{sub 4}, CO{sub 2} and H{sub 2} gas mixture. • Metastability of a-SiO{sub x}:H/c-Si passivation is investigated under thermal annealing and UV exposure. • A correlation between passivation metastability and Si−H bonds is found by FTIR spectra. • A metastability model is proposed. - Abstract: The adoption of a-SiO{sub x}:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiN{sub x} on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiO{sub x}:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Si−H and Si−O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm{sup 2}. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiO{sub x}:H/c-Si/a-SiO{sub x}:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiO{sub x} passivation properties, was furthermore considered. In

  3. Research Progress of Optical Fabrication and Surface-Microstructure Modification of SiC

    Directory of Open Access Journals (Sweden)

    Fang Jiang

    2012-01-01

    Full Text Available SiC has become the best candidate material for space mirror and optical devices due to a series of favorable physical and chemical properties. Fine surface optical quality with the surface roughness (RMS less than 1 nm is necessary for fine optical application. However, various defects are present in SiC ceramics, and it is very difficult to polish SiC ceramic matrix with the 1 nm RMS. Surface modification of SiC ceramics must be done on the SiC substrate. Four kinds of surface-modification routes including the hot pressed glass, the C/SiC clapping, SiC clapping, and Si clapping on SiC surface have been reported and reviewed here. The methods of surface modification, the mechanism of preparation, and the disadvantages and advantages are focused on in this paper. In our view, PVD Si is the best choice for surface modification of SiC mirror.

  4. Passivation of surface-nanostructured f-SiC and porous SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang; Ou, Yiyu

    The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

  5. Si surface passivation by SiOx:H films deposited by a low-frequency ICP for solar cell applications

    International Nuclear Information System (INIS)

    Zhou, H P; Wei, D Y; Xu, S; Xiao, S Q; Xu, L X; Huang, S Y; Guo, Y N; Khan, S; Xu, M

    2012-01-01

    Hydrogenated silicon suboxide (SiO x :H) thin films are fabricated by a low-frequency inductively coupled plasma of hydrogen-diluted SiH 4 + CO 2 at a low temperature (100 °C). Introduction of a small amount of oxygen into the film results in a predominantly amorphous structure, wider optical bandgap, increased H content, lower conductivity and higher activation energy. The minority carrier lifetime in the SiO x :H-passivated p-type Si substrate is up to 428 µs with a reduced incubation layer at the interface. The associated surface recombination velocity is as low as 70 cm s -1 . The passivation behaviour dominantly originates from the H-related chemical passivation. The passivation effect is also demonstrated by the excellent photovoltaic performance of the heterojunction solar cell with the SiO x :H-based passivation and emitter layers.

  6. Adsorption of oxygen atom on MoSi{sub 2} (110) surface

    Energy Technology Data Exchange (ETDEWEB)

    Sun, S.P., E-mail: sunshunping@jsut.edu.cn [School of Materials Engineering, Jiangsu University of Technology, Changzhou 213001 (China); Li, X.P.; Wang, H.J. [School of Materials Engineering, Jiangsu University of Technology, Changzhou 213001 (China); Jiang, Y., E-mail: yjiang@csu.edu.cn [School of Materials Science and Engineering, and Key Laboratory for Non-ferrous Materials of Ministry of Education, Central South University, Changsha 410083 (China); Yi, D.Q. [School of Materials Science and Engineering, and Key Laboratory for Non-ferrous Materials of Ministry of Education, Central South University, Changsha 410083 (China)

    2016-09-30

    Highlights: • The adsorption of oxygen atom on MoSi{sub 2} (110) surface was studied systematically. • The stability of MoSi{sub 2} low-index surfaces was also investigated. • The preference adsorption site of MoSi{sub 2} (110) surface for oxygen atom was H site. - Abstract: The adsorption energy, structural relaxation and electronic properties of oxygen atom on MoSi{sub 2} (110) surface have been investigated by first-principles calculations. The energetic stability of MoSi{sub 2} low-index surfaces was analyzed, and the results suggested that MoSi{sub 2} (110) surface had energetically stability. The site of oxygen atom adsorbed on MoSi{sub 2} (110) surface were discussed, and the results indicated that the preference adsorption site of MoSi{sub 2} (110) surface for oxygen atom was H site (hollow position). Our calculated work should help to understand further the interaction between oxygen atoms and MoSi{sub 2} surfaces.

  7. The surface modification of nanoporous SiO x thin films with a monofunctional organosilane

    International Nuclear Information System (INIS)

    Yang, D.-Q.; Meunier, M.; Sacher, E.

    2005-01-01

    The surfaces of nanostructured, porous SiO x /Si (air-oxidized Si) and SiO x thin films, deposited by excimer laser ablation in He and He + O 2 gas ambients, respectively, have been modified by the deposition of a monofunctional organosilane. They were characterized using photoacoustic Fourier-transform infrared (FTIR) X-ray photoelectron (XPS) spectroscopies, and field-emission scanning electron microscopy (FESEM). Photoacoustic FTIR analysis indicates that the organosilane has hydrolyzed to form a silanol, which has chemically reacted with SiO x through its surface silanol (-SiOH) group, to form siloxane (Si-O-Si) structures. An enhanced IR spectral signal is found, due to the expansion and contraction of both the pores of the solid and the gas within them

  8. Surface texture modification of spin-coated SiO2 xerogel thin films ...

    Indian Academy of Sciences (India)

    Condensation reaction: Si–OR + HO–Si → Si–O–Si + ROH. (b). Si–OH + HO–Si → Si–O–Si + H2O. (c). (Brinker and Scherrer 1990). The synthesized porous silica films usually are hydrophilic nature which can absorb moisture under the atmospheric con- dition due to the presence of the polar OH radical on the surface that ...

  9. Radicals and ions controlling by adjusting the antenna-substrate distance in a-Si:H deposition using a planar ICP for c-Si surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, H.P., E-mail: haipzhou@uestc.edu.cn [School of Energy Science and Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Ave., West High-Tech Zone, Chengdu, Sichuan, 611731 (China); Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xu, S., E-mail: shuyan.xu@nie.edu.sg [Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xu, M. [Key Laboratory of Information Materials of Sichuan Province & School of Electrical and Information Engineering, Southwest University for Nationalities, Chengdu, 610041 (China); Xu, L.X.; Wei, D.Y. [Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xiang, Y. [School of Energy Science and Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Ave., West High-Tech Zone, Chengdu, Sichuan, 611731 (China); Xiao, S.Q. [Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122 (China)

    2017-02-28

    Highlights: • A planar ICP was used to grow a-Si:H films for c-Si surface passivation. • The direct- and remote-plasma was compared for high-quality c-Si surface passivation. • The remote ICP with controlled plasma species and ion bombardments is preferable for the surface passivation of c-Si. - Abstract: Being a key issue in the research and fabrication of silicon heterojunction (SHJ) solar cells, crystalline silicon (c-Si) surface passivation is theoretically and technologically intricate due to its complicate dependence on plasma characteristics, material properties, and plasma-material interactions. Here amorphous silicon (a-Si:H) grown by a planar inductively coupled plasma (ICP) reactor working under different antenna-substrate distances of d was used for the surface passivation of low-resistivity p-type c-Si. It is found that the microstructures (i.e., the crystallinity, Si-H bonding configuration etc.) and passivation function on c-Si of the deposited a-Si:H were profoundly influenced by the parameter of d, which primarily determines the types of growing precursors of SiH{sub n}/H contributing to the film growth and the interaction between the plasma and growing surface. c-Si surface passivation is analyzed in terms of the d-dependent a-Si:H properties and plasma characteristics. The controlling of radical types and ion bombardment on the growing surface through adjusting parameter d is emphasized.

  10. Influence of the step properties on submonolayer growth of Ge and Si at the Si(111) surface

    Energy Technology Data Exchange (ETDEWEB)

    Romanyuk, Konstantin

    2009-10-21

    The present work describes an experimental investigation of the influence of the step properties on the submonolayer growth at the Si(111) surface. In particular the influence of step properties on the morphology, shape and structural stability of 2D Si/Ge nanostructures was explored. Visualization, morphology and composition measurements of the 2D SiGe nanostructures were carried out by scanning tunneling microscopy (STM). The formation of Ge nanowire arrays on highly ordered kink-free Si stepped surfaces is demonstrated. The crystalline nanowires with minimal kink densities were grown using Bi surfactant mediated epitaxy. The nanowires extend over lengths larger than 1 {mu}m have a width of 4 nm. To achieve the desired growth conditions for the formation of such nanowire arrays, a modified variant of surfactant mediated epitaxy was explored. It was shown that controlling the surfactant coverage at the surface and/or at step edges modifies the growth properties of surface steps in a decisive way. The surfactant coverage at step edges can be associated with Bi passivation of the step edges. The analysis of island size distributions showed that the step edge passivation can be tuned independently by substrate temperature and by Bi rate deposition. The measurements of the island size distributions for Si and Ge in surfactant mediated growth reveal different scaling functions for different Bi deposition rates on Bi terminated Si(111) surface. The scaling function changes also with temperature. The main mechanism, which results in the difference of the scaling functions can be revealed with data of Kinetic Monte-Carlo simulations. According to the data of the Si island size distributions at different growth temperatures and different Bi deposition rates the change of SiGe island shape and preferred step directions were attributed to the change of the step edge passivation. It was shown that the change of the step edge passivation is followed by a change of the

  11. Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Sołtys, Jakub; Piechota, Jacek; Ptasinska, Maria [Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawińskiego 5a, 02-106 Warsaw (Poland); Krukowski, Stanisław, E-mail: stach@unipress.waw.pl [Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawińskiego 5a, 02-106 Warsaw (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw (Poland)

    2014-08-28

    Ab initio density functional theory simulations were used to investigate the influence of hydrogen intercalation on the electronic properties of single and multiple graphene layers deposited on the SiC(0001) surface (Si-face). It is shown that single carbon layer, known as a buffer layer, covalently bound to the SiC substrate, is liberated after hydrogen intercalation, showing characteristic Dirac cones in the band structure. This is in agreement with the results of angle resolved photoelectron spectroscopy measurements of hydrogen intercalation of SiC-graphene samples. In contrast to that hydrogen intercalation has limited impact on the multiple sheet graphene, deposited on Si-terminated SiC surface. The covalently bound buffer layer is liberated attaining its graphene like structure and dispersion relation typical for multilayer graphene. Nevertheless, before and after intercalation, the four layer graphene preserved the following dispersion relations in the vicinity of K point: linear for (AAAA) stacking, direct parabolic for Bernal (ABAB) stacking and “wizard hat” parabolic for rhombohedral (ABCA) stacking.

  12. Formation and properties of thin films of iron silicides on Si(111) Surface: Ab initio simulation

    Science.gov (United States)

    Kuyanov, I. A.; Alekseev, A. A.; Zotov, A. V.

    2012-03-01

    Density functional theory in the generalized gradient approximation has been used to calculate the total energy and model the atomic and electronic structures of thin FeSi films with CsCl type lattice and γ-FeSi2 films with CaF2 fluorite type lattice on a Si(111) surface. It is shown that, upon the adsorption of two monolayers of iron atoms on Si(111), the most energetically favorable process is the growth of a γ-FeSi2 film with CaF2 type structure. The electronic structure of a silicide film formed upon the adsorption of one monolayer of iron atoms exhibits features that are characteristic of both FeSi and γ-FeSi2. The density of states calculated for the γ-FeSi2 well agrees with the experimental photoemission spectra reported in the literature.

  13. Evolution of kinetically controlled In-induced surface structure on Si(5 5 7) surface

    Energy Technology Data Exchange (ETDEWEB)

    Chauhan, Amit Kumar Singh [Physics of Energy Harvesting, (CSIR-NPL), Dr. K.S. Krishnan Road, New Delhi 110012 (India); Department of Physics, JMI, New Delhi 110025 (India); Eldose, Nirosh M.; Mishra, Monu [Physics of Energy Harvesting, (CSIR-NPL), Dr. K.S. Krishnan Road, New Delhi 110012 (India); Niazi, Asad; Nair, Lekha [Department of Physics, JMI, New Delhi 110025 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting, (CSIR-NPL), Dr. K.S. Krishnan Road, New Delhi 110012 (India)

    2014-09-30

    Highlights: • Evolution of In induced superstructures on Si(5 5 7) surface during RT and HT adsorption/desorption process. • Kinetics is governed by substrate temperature which exhibits various growth modes (FM, SK, VB) under different conditions. • Strain relaxation play significant role in the commencement of desorption/rearrangement of atoms. • A consolidated phase diagram of In/Si(5 5 7) interface has been reported with new √3 × √3-R30° and 4 × 1 phases. - Abstract: This paper introduces issue of kinetically controlled and temperature driven superstructural phase transition of Indium (In) on atomically clean high index Si(5 5 7)-7 × 1 surface. Auger electron spectroscopy analysis reveals that at room-temperature (RT) with a controlled incident flux of 0.002 ML/s; In overlayers evolve through the Frank-van der Merwe growth mode and yield a (1 × 1) diffraction pattern for coverage ≥1 ML. For substrate temperature <500°C, growth of In follows Stranski–Krastanov growth mode while for temperature >500°C island growth is observed. On annealing the In/Si(5 5 7) interface in the temperature range 250–340°C, clusters to two dimensional (2D) layer transformation on top of a stable monolayer is predominated. In-situ RT and HT adsorption and thermal desorption phenomena revealed the formation of coverage and temperature dependent thermally stable In induced superstructural phases such as (4 × 1) at 0.5 ML (520°C), (√3 × √3-R30°) at 0.3 ML (560°C) and (7 × 7) at 0.1 ML (580°C). These indium induced superstructures could be utilized as potential substrate for the growth of various exotic 1D/2D structures.

  14. Adsorption Mechanisms of NH3 on Chlorinated Si(100)-2 x 1 Surface

    International Nuclear Information System (INIS)

    Lee, Hee Soon; Choi, Cheol Ho

    2012-01-01

    The potential energy surfaces of ammonia molecule adsorptions on the symmetrically chlorinated Si(100)- 2 x 1 surface were explored with SIMOMM:MP2/6-31G(d). It was found that the initial nucleophilic attack by ammonia nitrogen to the surface Si forms a S N 2 type transition state, which eventually leads to an HCl molecular desorption. The second ammonia molecule adsorption requires much less reaction barrier, which can be rationalized by the surface cooperative effect. In general, it was shown that the surface Si-Cl bonds can be easily subjected to the substitution reactions by ammonia molecules yielding symmetric surface Si-NH 2 bonds, which can be a good initial template for subsequent surface chemical modifications. The ammonia adsorptions are in general more facile than the corresponding water adsorption, since ammonia is better nucleophile

  15. From Molecules to Surfaces: Radical-Based Mechanisms of Si-S and Si-Se Bond Formation on Silicon.

    Science.gov (United States)

    Buriak, Jillian M; Sikder, Md Delwar H

    2015-08-05

    The derivatization of silicon surfaces can have profound effects on the underlying electronic properties of the semiconductor. In this work, we investigate the radical surface chemistry of silicon with a range of organochalcogenide reagents (comprising S and Se) on a hydride-terminated silicon surface, to cleanly and efficiently produce surface Si-S and Si-Se bonds, at ambient temperature. Using a diazonium-based radical initiator, which induces formation of surface silicon radicals, a group of organochalcogenides were screened for reactivity at room temperature, including di-n-butyl disulfide, diphenyl disulfide, diphenyl diselenide, di-n-butyl sulfide, diphenyl selenide, diphenyl sulfide, 1-octadecanethiol, t-butyl disulfide, and t-butylthiol, which comprises the disulfide, diselenide, thiol, and thioether functionalities. The surface reactions were monitored by transmission mode Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy, and time-of-flight secondary ionization mass spectrometry. Calculation of Si-Hx consumption, a semiquantitative measure of yield of production of surface-bound Si-E bonds (E = S, Se), was carried out via FTIR spectroscopy. Control experiments, sans the BBD diazonium radical initiator, were all negative for any evident incorporation, as determined by FTIR spectroscopy. The functional groups that did react with surface silicon radicals included the dialkyl/diphenyl disulfides, diphenyl diselenide, and 1-octadecanethiol, but not t-butylthiol, diphenyl sulfide/selenide, and di-n-butyl sulfide. Through a comparison with the rich body of literature regarding molecular radicals, and in particular, silyl radicals, reaction mechanisms were proposed for each. Armed with an understanding of the reaction mechanisms, much of the known chemistry within the extensive body of radical-based reactivity has the potential to be harnessed on silicon and could be extended to a range of technologically relevant semiconductor

  16. Potential sputtering from a Si surface by very highly charged ion impact

    International Nuclear Information System (INIS)

    Tona, Masahide; Watanabe, Hirofumi; Takahashi, Satoshi; Nakamura, Nobuyuki; Yoshiyasu, Nobuo; Sakurai, Makoto; Yamada, Chikashi; Ohtani, Shunsuke

    2007-01-01

    We have observed radiation effect in collision of slow highly charged ions with the following target materials; a SiO 2 thin film, a Si(1 1 1)-(7 x 7) surface and a hydrogen terminated Si(1 1 1)-(1 x 1) surface. Secondary ion mass spectrometry and scanning tunneling microscopy revealed some features due to 'potential sputtering'; (a) strong dependence of secondary particle emission on the surface condition, (b) high yield of positive ion emission including cluster fragments and (c) creation of nanometer sized surface structure. The mechanism for the potential sputtering is briefly discussed, based on the 'Coulomb explosion' model

  17. Surface texturing of Si3N4–SiC ceramic tool components by pulsed laser machining

    CSIR Research Space (South Africa)

    Tshabalala, LC

    2016-03-01

    Full Text Available Traditional abrasive techniques such as grinding and lapping have long been used in the surface conditioning of engineering materials. However, in the processing of hard and brittle materials like silicon nitride (Si(sub3)N(sub4)), machining...

  18. Argon ion beam induced surface pattern formation on Si

    Energy Technology Data Exchange (ETDEWEB)

    Hofsäss, H.; Bobes, O.; Zhang, K. [2nd Institute of Physics, Faculty of Physics, University Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany)

    2016-01-21

    The development of self-organized surface patterns on Si due to noble gas ion irradiation has been studied extensively in the past. In particular, Ar ions are commonly used and the pattern formation was analyzed as function of ion incidence angle, ion fluence, and ion energies between 250 eV and 140 keV. Very few results exist for the energy regime between 1.5 keV and 10 keV and it appears that pattern formation is completely absent for these ion energies. In this work, we present experimental data on pattern formation for Ar ion irradiation between 1 keV and 10 keV and ion incidence angles between 50° and 75°. We confirm the absence of patterns at least for ion fluences up to 10{sup 18} ions/cm{sup 2}. Using the crater function formalism and Monte Carlo simulations, we calculate curvature coefficients of linear continuum models of pattern formation, taking into account contribution due to ion erosion and recoil redistribution. The calculations consider the recently introduced curvature dependence of the erosion crater function as well as the dynamic behavior of the thickness of the ion irradiated layer. Only when taking into account these additional contributions to the linear theory, our simulations clearly show that that pattern formation is strongly suppressed between about 1.5 keV and 10 keV, most pronounced at 3 keV. Furthermore, our simulations are now able to predict whether or not parallel oriented ripple patterns are formed, and in case of ripple formation the corresponding critical angles for the whole experimentally studied energies range between 250 eV and 140 keV.

  19. Mechanism of oxidation protection of the Si(001) surface by sub-monolayer Sr template

    Energy Technology Data Exchange (ETDEWEB)

    Fredrickson, Kurt D.; Seo, Hosung; Demkov, Alexander A., E-mail: demkov@physics.utexas.edu [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2016-08-14

    We investigate theoretically the oxidation stability of the Si(001) (2 × 1) reconstructed surface passivated by Sr. Using density functional theory, we find that the Sr surface with ½ monolayer of Sr is protected against oxidation. The presence of Sr delays the oxidation of the surface dimer, and even when the dimer is oxidized, O does not react with the back-bond, preventing the unwanted vertical growth of SiO{sub 2}. We also show that ¼ monolayer of Sr protects the Si surface in a different way. In the presence of ¼ monolayer of Sr, O atoms are attracted to the Sr-Si dimer complexes, thus preventing the formation of SiO{sub 2}.

  20. Enhanced absorption in Au nanoparticles/a-Si:H/c-Si heterojunction solar cells exploiting Au surface plasmon resonance

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, Maria; Giangregorio, Maria M.; Bianco, Giuseppe V.; Sacchetti, Alberto; Capezzuto, Pio; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy)

    2009-10-15

    Au nanoparticles (NPs)/(n-type)a-Si:H/(p-type)c-Si heterojunctions have been deposited combining plasma-enhanced chemical-vapour deposition (PECVD) with Au sputtering. We demonstrate that a density of {proportional_to}1.3 x 10{sup 11} cm{sup -2} of Au nanoparticles with an approximately 20 nm diameter deposited onto (n-type)a-Si:H/(p-type)c-Si heterojunctions enhance performance exploiting the improved absorption of light by the surface plasmon resonance of Au NPs. In particular, Au NPs/(n-type)a-Si:H/(p-type)c-Si show an enhancement of 20% in the short-circuit current, J{sub SC}, 25% in the power output, P{sub max} and 3% in the fill factor, FF, compared to heterojunctions without Au NPs. Structures have been characterized by spectroscopic ellipsometry, atomic force microscopy and current-voltage (I-V) measurements to correlate the plasmon resonance-induced enhanced absorption of light with photovoltaic performance. (author)

  1. Influence of a-Si:H deposition power on surface passivation property and thermal stability of a-Si:H/SiNx:H stacks

    Directory of Open Access Journals (Sweden)

    Hua Li

    2012-06-01

    Full Text Available The effectiveness of hydrogenated amorphous silicon (a-Si:H layers for passivating crystalline silicon surfaces has been well documented in the literature for well over a decade. One limitation of such layers however has arisen from their inability to withstand temperatures much above their deposition temperature without significant degradation. This limitation is of importance particularly with multicrystalline silicon materials where temperatures of at least 400°C are needed for effective hydrogenation of the crystallographic defects such as grain boundaries. To address this limitation, in this work the surface passivation quality and thermal stability of a stack passivating system, combining a layer of intrinsic a-Si:H and a capping layer of silicon nitride (SiNx:H, on p-type crystalline silicon wafers is studied and optimized. In particular the sensitivity of different microwave (MW power levels for underlying a-Si:H layer deposition are examined. Both effective minority carrier lifetime (ζeff measurement and Fourier transform infrared (FTIR spectrometry were employed to study the bonding configurations, passivating quality and thermal stability of the a-Si:H/SiNx:H stacks. It is established that the higher MW power could result in increased as-deposited ζeff and implied Voc (iVoc values, indicating likely improved surface passivation quality, but that this combination degrades more quickly when exposed to prolonged thermal treatments. The more dihydride-rich film composition corresponding to the higher MW power appears to be beneficial for bond restructuring by hydrogen interchanges when exposed to short term annealing, however it also appears more susceptible to providing channels for hydrogen out-effusion which is the likely cause of the poorer thermal stability for prolonged high temperature exposure compared with stacks with underlying a-Si:H deposited with lower MW power.

  2. Structure of the Si(1 1 3) surface studied by surface X-ray diffraction

    International Nuclear Information System (INIS)

    Mizuno, Yoshihito; Akimoto, Koichi; Aoyama, Tomohiro; Suzuki, Hidetoshi; Nakahara, Hitoshi; Ichimiya, Ayahiko; Sumitani, Kazushi; Takahashi, Toshio; Zhang Xiaowei; Sugiyama, Hiroshi; Kawata, Hiroshi

    2004-01-01

    We carried out a grazing incidence X-ray diffraction analysis of the Si(1 1 3) 3 x 1 surface using synchrotron radiation. We compared the experimental structure factors obtained from the integrated intensities of the fractional-order reflections with the calculated structure factors of the dimerized structure model of Ranke. By minimizing the R-factor, we determined the position and the size of the pentagon in the 3 x 1 dimerized structure model of Ranke. In addition, we found that a model with randomly distributed interstitial atoms at the center of the pentagon gives a smaller R-factor value

  3. Preparation and study of the porous Si surfaces obtained by electrochemical method

    Directory of Open Access Journals (Sweden)

    V.G. Lytovchenko

    2017-12-01

    Full Text Available Review of original results concerning electrochemical formation of porous Si layers and investigation of properties inherent to the formed layers has been presented. The results related with observation of changes in pores’ morphology depending on the etching conditions, correlation of morphology of the porous layers with their surface composition, photoluminescence and structural characteristics, catalytic activity of porous Si based MIS structures as well as theoretical modeling of the kinetics and mechanisms of the porous Si growth have been described.

  4. Controlled surface chemistry of diamond/β-SiC composite films for preferential protein adsorption.

    Science.gov (United States)

    Wang, Tao; Handschuh-Wang, Stephan; Yang, Yang; Zhuang, Hao; Schlemper, Christoph; Wesner, Daniel; Schönherr, Holger; Zhang, Wenjun; Jiang, Xin

    2014-02-04

    Diamond and SiC both process extraordinary biocompatible, electronic, and chemical properties. A combination of diamond and SiC may lead to highly stable materials, e.g., for implants or biosensors with excellent sensing properties. Here we report on the controllable surface chemistry of diamond/β-SiC composite films and its effect on protein adsorption. For systematic and high-throughput investigations, novel diamond/β-SiC composite films with gradient composition have been synthesized using the hot filament chemical vapor deposition (HFCVD) technique. As revealed by scanning electron microscopy (SEM), the diamond/β-SiC ratio of the composite films shows a continuous change from pure diamond to β-SiC over a length of ∼ 10 mm on the surface. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) was employed to unveil the surface termination of chemically oxidized and hydrogen treated surfaces. The surface chemistry of the composite films was found to depend on diamond/β-SiC ratio and the surface treatment. As observed by confocal fluorescence microscopy, albumin and fibrinogen were preferentially adsorbed from buffer: after surface oxidation, the proteins preferred to adsorb on diamond rather than on β-SiC, resulting in an increasing amount of proteins adsorbed to the gradient surfaces with increasing diamond/β-SiC ratio. By contrast, for hydrogen-treated surfaces, the proteins preferentially adsorbed on β-SiC, leading to a decreasing amount of albumin adsorbed on the gradient surfaces with increasing diamond/β-SiC ratio. The mechanism of preferential protein adsorption is discussed by considering the hydrogen bonding of the water self-association network to OH-terminated surfaces and the change of the polar surface energy component, which was determined according to the van Oss method. These results suggest that the diamond/β-SiC gradient film can be a promising material for biomedical applications which

  5. Carbon surface diffusion and SiC nanocluster self-ordering

    International Nuclear Information System (INIS)

    Pezoldt, J.; Trushin, Yu.V.; Kharlamov, V.S.; Schmidt, A.A.; Cimalla, V.; Ambacher, O.

    2006-01-01

    The process of the spatial ordering of SiC nanoclusters on the step edges on Si surfaces was studied by means of multi-scale computer simulation. The evolution of cluster arrays on an ideal flat surface and surfaces with terraces of various widths was performed by kinetic Monte Carlo (KMC) simulations based on quantitative studies of potential energy surfaces (PES) by molecular dynamics (MD). PES analysis revealed that certain types of steps act as strong trapping centres for both Si and C adatoms stimulating clusters nucleation. Spatial ordering of the SiC nanoclusters at the terrace edges can be achieved if the parameters of the growth process (substrate temperature, carbon flux) and substrate (steps direction and terrace widths) are adjusted to the surface morphology. Temperature ranges for growth regimes with and without formation of cluster chains were determined. Cluster size distributions and the dependence of optimal terrace width for self ordering on the deposition parameters were obtained

  6. Discrete impurity band from surface danging bonds in nitrogen and phosphorus doped SiC nanowires

    Science.gov (United States)

    Li, Yan-Jing; Li, Shu-Long; Gong, Pei; Li, Ya-Lin; Cao, Mao-Sheng; Fang, Xiao-Yong

    2018-04-01

    The electronic structure and optical properties of the nitrogen and phosphorus doped silicon carbide nanowires (SiCNWs) are investigated using first-principle calculations based on density functional theory. The results show doping can change the type of the band gap and improve the conductivity. However, the doped SiCNWs form a discrete impurity levels at the Fermi energy, and the dispersion degree decreases with the diameter increasing. In order to reveal the root of this phenomenon, we hydrogenated the doped SiCNWs, found that the surface dangling bonds were saturated, and the discrete impurity levels are degeneracy, which indicates that the discrete impurity band of the doped SiCNWs is derived from the dangling bonds. The surface passivation can degenerate the impurity levels. Therefore, both doping and surface passivation can better improve the photoelectric properties of the SiCNWs. The result can provide additional candidates in producing nano-optoelectronic devices.

  7. Surface morphology evolution of amorphous Fe-Si layers upon thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Sun, C M; Tsang, H K; Wong, S P; Ke, N [Department of Electronic Engineering, Chinese University of Hong Kong, Shatin, NT, Hong Kong (China); Hark, S K [Department of Physics, Chinese University of Hong Kong, Shatin, NT, Hong Kong (China)], E-mail: cmsun@ee.cuhk.edu.hk

    2008-04-21

    Changes in the surface morphology of ion-beam-synthesized amorphous Fe-Si layers after rapid thermal annealing (RTA) and furnace annealing (FA) were investigated using atomic force microscopy and transmission electron microscopy. Completely amorphous Fe-Si layers were formed by Fe implantation at a dosage of 5 x 10{sup 15} cm{sup -2} using a metal vapour vacuum arc ion source under 80 kV extraction voltage and cryogenic temperature. After RTA at 850 deg. C, {beta}-FeSi{sub 2} precipitates in Si are completely aggregated from this amorphous Fe-Si layer and the surface of the implanted layer remains flat. To date, no obvious photoluminescence (PL) spectrum has been reported from RTA treated {beta}-FeSi{sub 2} precipitates. However, after annealing at 850 deg. C for 40 s, high-quality {beta}-FeSi{sub 2} precipitates in Si are obtained which clearly show 1.5 {mu}m PL at 80 K for the first time. Even though additional long-term FA at 850 deg. C can enhance PL intensity to a limited extent, the longer thermal treatment induces the outdiffusion of {beta}-FeSi{sub 2} precipitates and degrades the surface flatness.

  8. Optimisation of electronic interface properties of a-Si:H/c-Si hetero-junction solar cells by wet-chemical surface pre-treatment

    International Nuclear Information System (INIS)

    Angermann, H.; Korte, L.; Rappich, J.; Conrad, E.; Sieber, I.; Schmidt, M.; Huebener, K.; Hauschild, J.

    2008-01-01

    The relation between structural imperfections at structured silicon surfaces, energetic distribution of interface state densities, recombination loss at a-Si:H/c-Si interfaces and solar cell characteristics have been intensively investigated using non-destructive, surface sensitive techniques, surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and electron microscopy (SEM). Sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of Si(111) pyramids. Special wet-chemical smoothing and oxide removal procedures for structured substrates were developed, in order to reduce the preparation-induced surface micro-roughness and density of electronically active defects. H-termination and passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological process. We achieved significantly lower micro-roughness, densities of surface states D it (E) and recombination loss at a-Si:H/c-Si interfaces on wafers with randomly distributed pyramids, compared to conventional pre-treatments. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H/c-Si/BSF/Al), the c-Si surface becomes part of the a-Si:H/c-Si interface, whose recombination activity determines cell performance. With textured substrates, the smoothening procedure results in a significant increase of short circuit current, fill factor and efficiency

  9. 4H-SiC surface energy tuning by nitrogen up-take

    Energy Technology Data Exchange (ETDEWEB)

    Pitthan, E., E-mail: eduardo.pitthan@ufrgs.br [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); PGMICRO, UFRGS, 91509-900, Porto Alegre, RS (Brazil); Amarasinghe, V.P. [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); Xu, C.; Gustafsson, T. [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854 (United States); Stedile, F.C. [PGMICRO, UFRGS, 91509-900, Porto Alegre, RS (Brazil); Instituto de Química, UFRGS, 91509-900, Porto Alegre, RS (Brazil); Feldman, L.C. [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854 (United States)

    2017-04-30

    Highlights: • Wettability modification of 4H-SiC as a function of nitrogen adsorption is reported. • SiC surface energy was significantly reduced as nitrogen was incorporated. • Modifications obtained were proved to be inert to etching and stable against time. • Variable control of SiC surface provides new opportunities for biomedical applications. - Abstract: Surface energy modification and surface wettability of 4H silicon carbide (0001) as a function of nitrogen adsorption is reported. The surface wettability is shown to go from primarily hydrophilic to hydrophobic and the surface energy was significantly reduced with increasing nitrogen incorporation. These changes are investigated by x-ray photoelectron spectroscopy and contact angle measurements. The surface energy was quantitatively determined by the Fowkes model and interpreted primarily in terms of the variation of the surface chemistry with nitrogen coverage. Variable control of SiC surface energies with a simple and controllable atomic additive such as nitrogen that is inert to etching, stable against time, and also effective in electrical passivation, can provide new opportunities for SiC biomedical applications, where surface wetting plays an important role in the interaction with the biological interfaces.

  10. Near-surface and bulk behavior of Ag in SiC

    International Nuclear Information System (INIS)

    Xiao, H.Y.; Zhang, Y.; Snead, L.L.; Shutthanandan, V.; Xue, H.Z.; Weber, W.J.

    2012-01-01

    Highlights: ► Ag release from SiC poses problems in safe operation of nuclear reactors. ► Near-surface and bulk behavior of Ag are studied by ab initio and ion beam methods. ► Ag prefers to adsorb on the surface rather than in the bulk SiC. ► At high temperature Ag desorbs from the surface instead of diffusion into bulk SiC. ► Surface diffusion may be a dominating mechanism accounting for Ag release from SiC. - Abstract: The diffusive release of fission products, such as Ag, from TRISO particles at high temperatures has raised concerns regarding safe and economic operation of advanced nuclear reactors. Understanding the mechanisms of Ag diffusion is thus of crucial importance for effective retention of fission products. Two mechanisms, i.e., grain boundary diffusion and vapor or surface diffusion through macroscopic structures such as nano-pores or nano-cracks, remain in debate. In the present work, an integrated computational and experimental study of the near-surface and bulk behavior of Ag in silicon carbide (SiC) has been carried out. The ab initio calculations show that Ag prefers to adsorb on the SiC surface rather than in the bulk, and the mobility of Ag on the surface is high. The energy barrier for Ag desorption from the surface is calculated to be 0.85–1.68 eV, and Ag migration into bulk SiC through equilibrium diffusion process is not favorable. Experimentally, Ag ions are implanted into SiC to produce Ag profiles buried in the bulk and peaked at the surface. High-temperature annealing leads to Ag release from the surface region instead of diffusion into the interior of SiC. It is suggested that surface diffusion through mechanical structural imperfection, such as vapor transport through cracks in SiC coatings, may be a dominating mechanism accounting for Ag release from the SiC in the nuclear reactor.

  11. Pd adsorption on Si(1 1 3) surface: STM and XPS study

    International Nuclear Information System (INIS)

    Hara, Shinsuke; Yoshimura, Masamichi; Ueda, Kazuyuki

    2008-01-01

    Pd-induced surface structures on Si(1 1 3) have been studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). In the initial process of the Pd adsorption below 0.10 ML, Pd silicide (Pd 2 Si) clusters are observed to form randomly on the surface. By increasing the Pd coverage to 0.10 ML, the clusters cover the entire surface, and an amorphous layer is formed. After annealing the Si(1 1 3)-Pd surface at 600 deg. C, various types of islands and chain protrusions appears. The agglomeration, coalescence and crystallization of these islands are observed by using high temperature (HT-) STM. It is also found by XPS that the islands correspond to Pd 2 Si structure. On the basis of these results, evolution of Pd-induced structures at high temperatures is in detail discussed

  12. Desorption dynamics of deuterium molecules from the Si(100)-(3x1) dideuteride surface.

    Science.gov (United States)

    Niida, T; Tsurumaki, H; Namiki, A

    2006-01-14

    We measured polar angle (theta)-resolved time-of-flight spectra of D2 molecules desorbing from the Si(100)-(3x1) dideuteride surface. The desorbing D2 molecules exhibit a considerable translational heating with mean desorption kinetic energies of approximately 0.25 eV, which is mostly independent of the desorption angles for 0 degreesdynamics of deuterium was discussed along the principle of detailed balance to predict their adsorption dynamics onto the monohydride Si surface.

  13. Bioinspired periodic pinecone-shaped Si subwavelength nanostructures for broadband and omnidirectional antireflective surface.

    Science.gov (United States)

    Leem, Jung Woo; Yu, Jae Su

    2012-10-01

    We reported the bioinspired periodic pinecone-shaped silicon (Si) subwavelength nanostructures, which were fabricated by laser interference lithography and inductively coupled plasma etching using thermally dewetted gold (Au) nanoparticles in SiCl4 plasma, on Si substrates for broadband and wide-angle antireflective surface. For the fabricated pinecone-like Si subwavelength nanostructures, antireflection characteristics and wetting behaviors were investigated. The pinecone-shaped Si subwavelength nanostructure with a period of 320 nm for 7 nm of Au film exhibited a relatively low solar weighted reflectance value of 3.5% over a wide wavelength range of 300-1030 nm, maintaining the reflectance values of < 9.9% at a wavelength of 550 nm up to a high incident angle of theta(i) = 70 degrees for non-polarized light. This structure also showed a hydrophobic surface with a water contact angle of theta(c) approximately 102 degrees.

  14. Evolution of kinetically controlled In-induced surface structure on Si(5 5 7) surface

    Science.gov (United States)

    Chauhan, Amit Kumar Singh; Eldose, Nirosh M.; Mishra, Monu; Niazi, Asad; Nair, Lekha; Gupta, Govind

    2014-09-01

    This paper introduces issue of kinetically controlled and temperature driven superstructural phase transition of Indium (In) on atomically clean high index Si(5 5 7)-7 × 1 surface. Auger electron spectroscopy analysis reveals that at room-temperature (RT) with a controlled incident flux of 0.002 ML/s; In overlayers evolve through the Frank-van der Merwe growth mode and yield a (1 × 1) diffraction pattern for coverage ≥1 ML. For substrate temperature 500 °C island growth is observed. On annealing the In/Si(5 5 7) interface in the temperature range 250-340 °C, clusters to two dimensional (2D) layer transformation on top of a stable monolayer is predominated. In-situ RT and HT adsorption and thermal desorption phenomena revealed the formation of coverage and temperature dependent thermally stable In induced superstructural phases such as (4 × 1) at 0.5 ML (520 °C), (√3 × √3-R30°) at 0.3 ML (560 °C) and (7 × 7) at 0.1 ML (580 °C). These indium induced superstructures could be utilized as potential substrate for the growth of various exotic 1D/2D structures.

  15. Localized Surface Plasmon on 6H SiC with Ag Nanoparticles

    DEFF Research Database (Denmark)

    Wei, Yi; Fadil, Ahmed; Ou, Haiyan

    2017-01-01

    Silver (Ag) nanoparticles (NPs) were deposited on the surface of bulk Nitrogen-Boron co-doped 6H silicon carbide (SiC), and the Ag NPs were observed to induce localized surface plasmons (LSP) resonances on the SiC substrate, which was expected to improve the internal quantum efficiency (IQE...... of an Ag nanoparticle on the SiC substrate, it is predicted that when the diameter of the cross section on the xy plane of the Ag nanoparticle is greater than 225 nm, the LSP starts to enhance the PL intensity. With implementation of a 3rd order exponential decay fitting model to the TRPL results...

  16. Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure

    Energy Technology Data Exchange (ETDEWEB)

    Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); Billen, Arne [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Moussa, Alain; Caymax, Matty; Bender, Hugo [Imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); Heyns, Marc [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); Delabie, Annelies [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium)

    2016-10-30

    Highlights: • O{sub 3} or O{sub 2} exposures on H-Si(100) result in O ALs with different surface structures. • Si-EPI on O AL using O{sub 3} process is by direct epitaxial growth mechanism. • Si-EPI on O AL using O{sub 2} process is by epitaxial lateral overgrowth mechanism. • Distortions by O AL, SiH{sub 4} flux rate and Si thickness has an impact on Si-EPI quality. - Abstract: The epitaxial growth of Si layers on Si substrates in the presence of O atoms is generally considered a challenge, as O atoms degrade the epitaxial quality by generating defects. Here, we investigate the growth mechanisms for Si epitaxy on O atomic layers (ALs) with different O-contents and structures. O ALs are deposited by ozone (O{sub 3}) or oxygen (O{sub 2}) exposure on H-terminated Si at 50 °C and 300 °C respectively. Epitaxial Si is deposited by chemical vapor deposition using silane (SiH{sub 4}) at 500 °C. After O{sub 3} exposure, the O atoms are uniformly distributed in Si-Si dimer/back bonds. This O layer still allows epitaxial seeding of Si. The epitaxial quality is enhanced by lowering the surface distortions due to O atoms and by decreasing the arrival rate of SiH{sub 4} reactants, allowing more time for surface diffusion. After O{sub 2} exposure, the O atoms are present in the form of SiO{sub x} clusters. Regions of hydrogen-terminated Si remain present between the SiO{sub x} clusters. The epitaxial seeding of Si in these structures is realized on H-Si regions, and an epitaxial layer grows by a lateral overgrowth mechanism. A breakdown in the epitaxial ordering occurs at a critical Si thickness, presumably by accumulation of surface roughness.

  17. Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

    International Nuclear Information System (INIS)

    Focsa, A.; Slaoui, A.; Charifi, H.; Stoquert, J.P.; Roques, S.

    2009-01-01

    Surface passivation of bare silicon or emitter region is of great importance towards high efficiency solar cells. Nowadays, this is usually accomplished by depositing an hydrogenated amorphous silicon nitride (a-SiNx:H) layer on n + p structures that serves also as an excellent antireflection layer. On the other hand, surface passivation of p-type silicon is better assured by an hydrogenated amorphous silicon (a-Si:H) layer but suffers from optical properties. In this paper, we reported the surface passivation of p-type and n-type silicon wafers by using an a-Si:H/SiNx:H double layer formed at low temperature (50-400 deg. C) with ECR-PECVD technique. We first investigated the optical properties (refraction index, reflectance, and absorbance) and structural properties by FTIR (bonds Si-H, N-H) of the deposited films. The hydrogen content in the layers was determined by elastic recoil detection analysis (ERDA). The passivation effect was monitored by measuring the minority carrier effective lifetime vs. different parameters such as deposition temperature and amorphous silicon layer thickness. We have found that a 10-15 nm a-Si film with an 86 nm thick SiN layer provides an optimum of the minority carriers' lifetime. It increases from an initial value of about 50-70 μs for a-Si:H to about 760 and 800 μs for a-Si:H/SiNx:H on Cz-pSi and FZ-nSi, respectively, at an injection level 2 x 10 15 cm -3 . The effective surface recombination velocity, S eff , for passivated double layer on n-type FZ Si reached 11 cm/s and for FZ-pSi-14 cm/s, and for Cz-pSi-16-20 cm/s. Effect of hydrogen in the passivation process is discussed.

  18. The strain effect in the surface barrier structures prepared on the basis of n-Si and p-Si

    International Nuclear Information System (INIS)

    Mamatkarimov, O.O.; Tuychiev, U.A.

    2004-01-01

    Full text: One of the ways of creation of large deformations in small volume of the semiconductor is the deformation created by a needle. At insignificant change of external influence the large deformation under a needle in small volume of the semiconductor the significant change of electrophysical parameters of the semiconductor in small volume is created. Therefore, in the present work the results of researches of local pressure influence on physical properties of surface barrier structures has been performed on the basis of silicon with Ni and Mn impurity. The relative changes of a direct current made on the basis n-Si and p-Si from a different degree of compensation are given depending on size of local pressure are shown. Change of current in structures Au-Si -Sb with specific resistance of base ρ=80 Ω·cm and ρ=200 Ω·cm are I p /I 0 =3-3.5 times and I P /I ) =2-2.5 times at pressure P=1.6·10 8 Pa respectively. These data show, that in structures received on the basis of initial silicon, change of a direct current with pressure is in inverse proportion to size of resistance of base of the diode. And in structures Au-Si -Sb with specific resistance of base ρ=5·10 2 Ω·cm and ρ=3·10 3 Ω·cm these changes accordingly are I P /I 0 =7 and I P /I 0 =14. Changes of direct current relative to initial value for structures on the basis p-Si with specific resistance ρ=7·10 2 Ω·cm and ρ=4·10 3 Ω·cm) are I P /I 0 =9 and I P /I 0 =16 respectively. The same changes of direct current of structures on the basis P-Si at local pressure are I P /I 0 =2-2.5. The given values I P /I 0 testify that as in structures Au-Si -Sb, and structures Sb-p-Si -Au, unlike structures on the basis of initial silicon, the values I P /I 0 are increased with increase of specific resistance of base of structures

  19. Pt-Si Bifunctional Surfaces for CO and Methanol Electro-Oxidation

    DEFF Research Database (Denmark)

    Permyakova, Anastasia A.; Han, Binghong; Jensen, Jens Oluf

    2015-01-01

    Bimetallic surfaces offer activity benefits derived from synergistic effects among active sites with uniquely different functions, which is particularly important for the development of highly effective heterogeneous catalysts for specific technological applications, such as energy conversion...... and storage. Here we report on Pt-Si bulk samples prepared by arc-melting, for the first time, with high activities toward the electro-oxidation of CO and methanol. Increasing the Si concentration on the surface was correlated with the shifts of onset oxidation potentials to lower values and higher activities...... for CO and methanol electro-oxidation. It is proposed that the reaction on the Pt-Si catalyst could follow a Langmuir-Hinshelwood type of mechanism, where substantially enhanced catalytic activity is attributed to the fine-tuning of the surface Pt-Si atomic structure....

  20. Theoretical reconsideration of antiferromagnetic Fermi surfaces in URu{sub 2}Si{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Yamagami, Hiroshi, E-mail: yamagami@cc.kyoto-su.ac.jp [Department of Physics, Faculty of Science, Kyoto Sangyo University, Kyoto 603-8555 (Japan)

    2011-01-01

    In an itinerant 5f-band model, the antiferromagnetic (AFM) Fermi surfaces of URu{sub 2}Si{sub 2} are reconsidered using a relativistic LAPW method within a local spin-density approximation, especially taking into account the lattice parameters dependent on pressures. The reduction of the z-coordinate of the Si sites results in the effect of flattening the Ru-Si layers of URu{sub 2}Si{sub 2} crystal structure, thus weakening a hybridization/mixing between the U-5f and Ru-4d states in the band structure. Consequently the 5f bands around the Fermi level are more flat in the dispersion with decreasing the z-coordinate, thus producing three closed Fermi surfaces like 'curing-stone', 'rugby-ball' and 'ball'. The origins of de Haas-van Alphen branches can be qualitatively interpreted from the obtained AFM Fermi surfaces.

  1. Theoretical reconsideration of antiferromagnetic Fermi surfaces in URu2Si2

    International Nuclear Information System (INIS)

    Yamagami, Hiroshi

    2011-01-01

    In an itinerant 5f-band model, the antiferromagnetic (AFM) Fermi surfaces of URu 2 Si 2 are reconsidered using a relativistic LAPW method within a local spin-density approximation, especially taking into account the lattice parameters dependent on pressures. The reduction of the z-coordinate of the Si sites results in the effect of flattening the Ru-Si layers of URu 2 Si 2 crystal structure, thus weakening a hybridization/mixing between the U-5f and Ru-4d states in the band structure. Consequently the 5f bands around the Fermi level are more flat in the dispersion with decreasing the z-coordinate, thus producing three closed Fermi surfaces like 'curing-stone', 'rugby-ball' and 'ball'. The origins of de Haas-van Alphen branches can be qualitatively interpreted from the obtained AFM Fermi surfaces.

  2. Scanning electron microscopy of the surfaces of ion implanted SiC

    Science.gov (United States)

    Malherbe, Johan B.; van der Berg, N. G.; Kuhudzai, R. J.; Hlatshwayo, T. T.; Thabethe, T. T.; Odutemowo, O. S.; Theron, C. C.; Friedland, E.; Botha, A. J.; Wendler, E.

    2015-07-01

    This paper gives a brief review of radiation damage caused by particle (ions and neutrons) bombardment in SiC at different temperatures, and its annealing, with an expanded discussion on the effects occurring on the surface. The surface effects were observed using SEM (scanning electron microscopy) with an in-lens detector and EBSD (electron backscatter diffraction). Two substrates were used, viz. single crystalline 6H-SiC wafers and polycrystalline SiC, where the majority of the crystallites were 3C-SiC. The surface modification of the SiC samples by 360 keV ion bombardment was studied at temperatures below (i.e. room temperature), just at (i.e. 350 °C), or above (i.e. 600 °C) the critical temperature for amorphization of SiC. For bombardment at a temperature at about the critical temperature an extra step, viz. post-bombardment annealing, was needed to ascertain the microstructure of bombarded layer. Another aspect investigated was the effect of annealing of samples with an ion bombardment-induced amorphous layer on a 6H-SiC substrate. SEM could detect that this layer started to crystalize at 900 °C. The resulting topography exhibited a dependence on the ion species. EBSD showed that the crystallites forming in the amorphized layer were 3C-SiC and not 6H-SiC as the substrate. The investigations also pointed out the behaviour of the epitaxial regrowth of the amorphous layer from the 6H-SiC interface.

  3. Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates.

    Science.gov (United States)

    López, Gema; Ortega, Pablo R; Voz, Cristóbal; Martín, Isidro; Colina, Mónica; Morales, Anna B; Orpella, Albert; Alcubilla, Ramón

    2013-01-01

    The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300-1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (S eff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450-1000 nm.

  4. Super-hydrophobic surfaces of SiO₂-coated SiC nanowires: fabrication, mechanism and ultraviolet-durable super-hydrophobicity.

    Science.gov (United States)

    Zhao, Jian; Li, Zhenjiang; Zhang, Meng; Meng, Alan

    2015-04-15

    The interest in highly water-repellent surfaces of SiO2-coated SiC nanowires has grown in recent years due to the desire for self-cleaning and anticorrosive surfaces. It is imperative that a simple chemical treatment with fluoroalkylsilane (FAS, CF3(CF2)7CH2CH2Si(OC2H5)3) in ethanol solution at room temperature resulted in super-hydrophobic surfaces of SiO2-coated SiC nanowires. The static water contact angle of SiO2-coated SiC nanowires surfaces was changed from 0° to 153° and the morphology, microstructure and crystal phase of the products were almost no transformation before and after super-hydrophobic treatment. Moreover, a mechanism was expounded reasonably, which could elucidate the reasons for their super-hydrophobic behavior. It is important that the super-hydrophobic surfaces of SiO2-coated SiC nanowires possessed ultraviolet-durable (UV-durable) super-hydrophobicity. Copyright © 2014 Elsevier Inc. All rights reserved.

  5. Surface spins disorder in uncoated and SiO{sub 2} coated maghemite nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Zeb, F. [Nanoscience and Technology Laboratory, International Islamic University, H-10, 44000 Islamabad (Pakistan); Nadeem, K., E-mail: kashif.nadeem@iiu.edu.pk [Nanoscience and Technology Laboratory, International Islamic University, H-10, 44000 Islamabad (Pakistan); Shah, S. Kamran Ali; Kamran, M. [Nanoscience and Technology Laboratory, International Islamic University, H-10, 44000 Islamabad (Pakistan); Gul, I. Hussain [School of Chemical & Materials Engineering, National University of Sciences and Technology (NUST), H-12, 44000 Islamabad, Pakistan (Pakistan); Ali, L. [Materials Research Laboratory, International Islamic University, H-10, 44000 Islamabad (Pakistan)

    2017-05-01

    We studied the surface spins disorder in uncoated and silica (SiO{sub 2}) coated maghemite (γ-Fe{sub 2}O{sub 3}) nanoparticles using temperature and time dependent magnetization. The average crystallite size for SiO{sub 2} coated and uncoated nanoparticles was about 12 and 29 nm, respectively. Scanning electron microscopy (SEM) showed that the nanoparticles are spherical in shape and well separated. Temperature scans of zero field cooled (ZFC)/field cooled (FC) magnetization measurements showed lower average blocking temperature (T{sub B}) for SiO{sub 2} coated maghemite nanoparticles as compared to uncoated nanoparticles. The saturation magnetization (M{sub s}) of SiO{sub 2} coated maghemite nanoparticles was also lower than the uncoated nanoparticles and is attributed to smaller average crystallite size of SiO{sub 2} coated nanoparticles. For saturation magnetization vs. temperature data, Bloch's law (M(T)= M(0).(1− BT{sup b})) was fitted well for both uncoated and SiO{sub 2} coated nanoparticles and yields: B =3×10{sup −7} K{sup -b}, b=2.22 and B=0.0127 K{sup -b}, b=0.57 for uncoated and SiO{sub 2} coated nanoparticles, respectively. Higher value of B for SiO{sub 2} coated nanoparticles depicts decrease in exchange coupling due to enhanced surface spins disorder (broken surface bonds) as compared to uncoated nanoparticles. The Bloch's exponent b was decreased for SiO{sub 2} coated nanoparticles which is due to their smaller average crystallite size or finite size effects. Furthermore, a sharp increase of coercivity at low temperatures (<25 K) was observed for SiO{sub 2} coated nanoparticles which is also due to contribution of increased surface anisotropy or frozen surface spins in these smaller nanoparticles. The FC magnetic relaxation data was fitted to stretched exponential law which revealed slower magnetic relaxation for SiO{sub 2} coated nanoparticles. All these measurements revealed smaller average crystallite size and enhanced surface

  6. Adsorption of carbon monoxide on the Si(111)-7 × 7 surface

    Science.gov (United States)

    Shong, Bonggeun

    2017-05-01

    The adsorption of CO and surface chemistry of Si are well-understood topics in surface science. However, research into the adsorption of CO on the Si(111)-7 × 7 surface is deficient. In this study, the adsorption of CO on Si(111)-7 × 7 is investigated via high-level density functional theory calculations using cluster model. Two adsorption configurations are found to be kinetically and thermodynamically viable: on-top on rest-atoms and back-bond insertion on adatoms, both binding to the surface via C atom. Structural, electronic, and spectroscopic properties of the adsorbates indicate a σ-donating/π-accepting nature of the COsbnd Si bonds in both configurations. The domination of σ-donation in the on-top configuration results in a net positive charge on the on-top adsorbate, and the opposite situation yields a net negative charge on the back-bond insertion adsorbates. Our study provides a detailed understanding of the previous experimental observations of fundamental surface chemical phenomena, suggesting possible applications of Si surface functionalization using CO.

  7. Surface-site-selective study of valence electronic structures of clean Si(100)-2x1 using Si-L23VV Auger electron-Si-2p photoelectron coincidence spectroscopy

    International Nuclear Information System (INIS)

    Kakiuchi, Takuhiro; Nagaoka, Shinichi; Hashimoto, Shogo; Fujita, Narihiko; Tanaka, Masatoshi; Mase, Kazuhiko

    2010-01-01

    Valence electronic structures of a clean Si(100)-2x1 surface are investigated in a surface-site-selective way using Si-L 23 VV Auger electron-Si-2p photoelectron coincidence spectroscopy. The Si-L 23 VV Auger electron spectra measured in coincidence with Si-2p photoelectrons emitted from the Si up-atoms or Si 2nd-layer of Si(100)-2x1 suggest that the position where the highest density of valence electronic states located in the vicinity of the Si up-atoms is shifted by 0.8 eV towards lower binding energy relative to that in the vicinity of the Si 2nd-layer. Furthermore, the valence band maximum in the vicinity of the Si up-atoms is indicated to be shifted by 0.1 eV towards lower binding energy relative to that in the vicinity of the Si 2nd-layer. These results are direct evidence of the transfer of negative charge from the Si 2nd-layer to the Si up-atoms. (author)

  8. Spontaneous dissociation of a conjugated molecule on the Si(100) surface

    DEFF Research Database (Denmark)

    Lin, Rong; Galili, Michael; Quaade, Ulrich

    2002-01-01

    The adsorption mechanism of alpha-sexithiophene (alpha-6T) on the clean Si(100)-(2x1) surface has been investigated using scanning tunneling microscopy (STM) and first principles electronic structure calculations. We find that at submonolayer coverage, the alpha-6T molecules are not stable...... coverage, the STM images show the existence of complete alpha-6T molecules. In addition, results of the adsorption behavior of alpha-6T molecules on the H-passivated Si(100)-(2x1) surface are reported. On this surface the molecules are highly mobile at room temperature due to the weak molecule...

  9. Surface roughness prediction model in end milling of Al/SiC p MMC ...

    African Journals Online (AJOL)

    This research focuses on study and analyses of surface quality improvement in end milling operation of Al/SiCp metal matrix composite. These materials are selected as they are most widely used in automobile and aerospace industry. This research paper develops an improved mathematical model for surface roughness ...

  10. Molecular dynamics simulation of temperature effects on CF3+ etching of Si surface

    NARCIS (Netherlands)

    Ning, J. P.; Lu, X. D.; Zhao, C. L.; Qin, Y. M.; He, P. N.; Bogaerts, A.; Gou, F. J.

    2010-01-01

    Molecular dynamics method was employed to investigate the effects of the reaction layer formed near the surface region on CF3+ etching of Si at different temperatures. The simulation results show that the coverages of F and C are sensitive to the surface temperature. With increasing temperature, the

  11. High-Density modification of H-Terminated Si(111) surfaces using Short-Chain Alkynes

    NARCIS (Netherlands)

    Pujari, Sidharam P.; Filippov, Alexei D.; Gangarapu, Satesh; Zuilhof, Han

    2017-01-01

    H-Si(111)-terminated surfaces were alkenylated via two routes: Through a novel one-step gas-phase hydrosilylation reaction with short alkynes (C3 to C6) and for comparison via a two-step chlorination and Grignard alkenylation process. All modified surfaces were characterized by static water contact

  12. Energy spectroscopy studies of radiation-induced damaged surfaces and interfaces in SiO 2/Si by light charged particles

    Science.gov (United States)

    Zhongquan, Ma; Qi, Guo; Tao, Jin

    1992-09-01

    In this paper, the three different experimental techniques of AES (Auger electron spectroscopy), ARXPS (angle-resolved X-ray photoelectron spectroscopy) and DLTS (deep level transient spectroscopy) with C- V measurements have been applied to study damaged surfaces and interfaces of SiO 2Si in MOS. The defects, appearing at the surface of the dielectric layer and the interface between SiO 2 and Si, induced by energetic electron and/or hydrogen ion (H +) beams, were independently investigated using ARXPS and AES combined with DLTS, respectively. The more intermediate oxidation states, such as Si 1+, Si 2+ and Si 3+, corresponding to Si 2O, SiO and Si 2O 3 clusters formed at the surface and the transition regions, were obtained for the irradiated sample. The changes of the intensity, full width at half maximum (fwhm) and binding energy of each ARXPS spectrum with take-off angle showed that silicon-rich clusters or chains, and about 4.8 Å of an amorphous silicon, actually existed in the outermost surface as a result of preferential sputtering of oxygen by electron ionization and displacement by H +. The Si 2p core-level spectra were analyzed in terms of five chemically shifted components corresponding to the basic Si binding units SiO n with n = 0, 1, ⋯, 4. The concentration of these bonding units as a function of effective depth of emission was essentially in agreement with the random-bonding model. But some separation into a silicon-rich phase was also evident at intermediate stoichiometries and stacks. In addition, more dangling bonds of Si were present overall in the oxide layer, which acted with an amphoteric character and caused the defect states to lie in the lower half of the bandgap.

  13. Dynamic change in the surface and layer structures during epitaxial growth of Si on a Si(111)-7x7 surface

    International Nuclear Information System (INIS)

    Fukaya, Y.; Shigeta, Y.; Maki, K.

    2000-01-01

    In order to investigate the dynamic process during growth of a Si layer on the Si(111)-7x7 surface held at 380 deg. C, the rocking curve of reflection high-energy electron diffraction (RHEED) is continuously measured at 0.5 deg. to 6 deg. at intervals of 0.05 deg. to the glancing angle of the incident electron beam which takes 18 sec. At the initial growth stage, the multilayer islands are grown on the native 7x7 surface with broader Bragg peaks in the rocking curve than those from the native surface. The sharpness of the Bragg peak is subsequently recovered after the thickness of the Si layer reaches 3 BL (1 BL=0.31 nm), at which the growth transforms to layer-by-layer growth. The comparison of the measured rocking curve with the calculated one based on the dynamical theory of RHEED intensity is also performed by optimizing each atomic position in the growing layer so as to minimize the difference between both curves. The space of the double layer of the (111) plane in the multilayer islands expands and is restored to the normal spacing after the growth mode transforms to the layer-by-layer mode. The broadening of the Bragg peaks at the initial growth stage relates to the rearrangement process of a stacking-fault layer in the 7x7 structure on the substrate surface

  14. HREELS study of the adsorption and evolution of diethylamine (DEA) on Si(1 0 0) surfaces

    International Nuclear Information System (INIS)

    Yeninas, S.; Brickman, A.; Craig, J.H.; Lozano, J.

    2008-01-01

    The adsorption of diethylamine (DEA) on Si(1 0 0) at 100 K was investigated using high-resolution electron energy loss spectroscopy (HREELS) and electron stimulated desorption (ESD). The thermal evolution of DEA on Si(1 0 0) was studied using temperature programmed desorption (TPD). Our results demonstrate DEA bonds datively to the Si(1 0 0) surface with no dissociation at 100 K. Thermal desorption of DEA takes place via a β-hydride elimination process leaving virtually no carbon behind. Electronic processing of DEA/Si(1 0 0) at 100 K results in desorption of ethyl groups; however, carbon and nitrogen are deposited on the surface as a result of electron irradiation. Thermal removal of carbon and nitrogen was not possible, indicating the formation of silicon carbide and silicon nitride

  15. Effect of surface passivation by SiN/SiO{sub 2} of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

    Energy Technology Data Exchange (ETDEWEB)

    Gassoumi, Malek, E-mail: malek.gassoumi@fsm.rnu.tn; Mosbahi, Hana; Zaidi, Mohamed Ali [Universite deMonastir, Laboratoire de Micro-Optoelectroniques et Nanostructures, Faculte des Sciences de Monastir (Tunisia); Gaquiere, Christophe [Universite des Sciences et Technologies de Lille, Institut d' Electronique de Microelectronique et de Nanotechnologie IEMN, Departement hyperfrequences et Semiconducteurs (France); Maaref, Hassen [Universite deMonastir, Laboratoire de Micro-Optoelectroniques et Nanostructures, Faculte des Sciences de Monastir (Tunisia)

    2013-07-15

    Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO{sub 2} passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO{sub 2} film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device.

  16. Dynamics of Defects and Dopants in Complex Systems: Si and Oxide Surfaces and Interfaces

    Science.gov (United States)

    Kirichenko, Taras; Yu, Decai; Banarjee, Sanjay; Hwang, Gyeong

    2004-10-01

    Fabrication of forthcoming nanometer scale electronic devices faces many difficulties including formation of extremely shallow and highly doped junctions. At present, ultra-low-energy ion implantation followed by high-temperature thermal annealing is most widely used to fabricate such ultra-shallow junctions. In the process, a great challenge lies in achieving precise control of redistribution and electrical activation of dopant impurities. Native defects (such as vacancies and interstitials) generated during implantation are known to be mainly responsible for the TED and also influence significantly the electrical activation/deactivation. Defect-dopant dynamics is rather well understood in crystalline Si and SiO2. However, little is known about their diffusion and annihilation (or precipitation) at the surfaces and interfaces, despite its growing importance in determining junction profiles as device dimensions get smaller. In this talk, we will present our density functional theory calculation results on the atomic and electronic structure and dynamical behavior of native defects and dopant-defect complexes in disordered/strained Si and oxide systems, such as i) clean and absorbent-modified Si(100) surface and subsurface layers, ii) amorphous-crystalline Si interfaces and iii) amorphous SiO2/Si interfaces. The fundamental understanding and data is essential in developing a comprehensive kinetic model for junction formation, which would contribute greatly in improving current process technologies.

  17. The Stellar Imager (SI) - A Mission to Resolve Stellar Surfaces, Interiors, and Magnetic Activity

    International Nuclear Information System (INIS)

    Christensen-Dalsgaard, Joergen; Carpenter, Kenneth G; Schrijver, Carolus J; Karovska, Margarita

    2011-01-01

    The Stellar Imager (SI) is a space-based, UV/Optical Interferometer (UVOI) designed to enable 0.1 milli-arcsecond (mas) spectral imaging of stellar surfaces and of the Universe in general. It will also probe via asteroseismology flows and structures in stellar interiors. SI will enable the development and testing of a predictive dynamo model for the Sun, by observing patterns of surface activity and imaging of the structure and differential rotation of stellar interiors in a population study of Sun-like stars to determine the dependence of dynamo action on mass, internal structure and flows, and time. SI's science focuses on the role of magnetism in the Universe and will revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes in the Universe. SI is a 'Landmark/Discovery Mission' in the 2005 Heliophysics Roadmap, an implementation of the UVOI in the 2006 Astrophysics Strategic Plan, and a NASA Vision Mission ('NASA Space Science Vision Missions' (2008), ed. M. Allen). We present here the science goals of the SI Mission, a mission architecture that could meet those goals, and the technology development needed to enable this mission. Additional information on SI can be found at: http://hires.gsfc.nasa.gov/si/.

  18. Evolution of interfacial intercalation chemistry on epitaxial graphene/SiC by surface enhanced Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ferralis, Nicola, E-mail: ferralis@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Carraro, Carlo [Department of Chemical and Biomolecular Engineering, University of California, Berkeley, CA 94720 (United States)

    2014-11-30

    Highlights: • H-intercalated epitaxial graphene–SiC interface studied with surface enhanced Raman. • Evolution of graphene and H–Si interface with UV-ozone, annealing and O-exposure. • H–Si interface and quasi-freestanding graphene are retained after UV-ozone treatment. • Enhanced ozonolytic reactivity at the edges of H-intercalated defected graphene. • Novel SERS method for characterizing near-surface graphene–substrate interfaces. - Abstract: A rapid and facile evaluation of the effects of physical and chemical processes on the interfacial layer between epitaxial graphene monolayers on SiC(0 0 0 1) surfaces is essential for applications in electronics, photonics, and optoelectronics. Here, the evolution of the atomic scale epitaxial graphene-buffer-layer–SiC interface through hydrogen intercalation, thermal annealings, UV-ozone etching and oxygen exposure is studied by means of single microparticle mediated surface enhanced Raman spectroscopy (smSERS). The evolution of the interfacial chemistry in the buffer layer is monitored through the Raman band at 2132 cm{sup −1} corresponding to the Si-H stretch mode. Graphene quality is monitored directly by the selectively enhanced Raman signal of graphene compared to the SiC substrate signal. Through smSERS, a simultaneous correlation between optimized hydrogen intercalation in epitaxial graphene/SiC and an increase in graphene quality is uncovered. Following UV-ozone treatment, a fully hydrogen passivated interface is retained, while a moderate degradation in the quality of the hydrogen intercalated quasi-freestanding graphene is observed. While hydrogen intercalated defect free quasi-freestanding graphene is expected to be robust upon UV-ozone, thermal annealing, and oxygen exposure, ozonolytic reactivity at the edges of H-intercalated defected graphene results in enhanced amorphization of the quasi-freestanding (compared to non-intercalated) graphene, leading ultimately to its complete etching.

  19. Evolution of interfacial intercalation chemistry on epitaxial graphene/SiC by surface enhanced Raman spectroscopy

    International Nuclear Information System (INIS)

    Ferralis, Nicola; Carraro, Carlo

    2014-01-01

    Highlights: • H-intercalated epitaxial graphene–SiC interface studied with surface enhanced Raman. • Evolution of graphene and H–Si interface with UV-ozone, annealing and O-exposure. • H–Si interface and quasi-freestanding graphene are retained after UV-ozone treatment. • Enhanced ozonolytic reactivity at the edges of H-intercalated defected graphene. • Novel SERS method for characterizing near-surface graphene–substrate interfaces. - Abstract: A rapid and facile evaluation of the effects of physical and chemical processes on the interfacial layer between epitaxial graphene monolayers on SiC(0 0 0 1) surfaces is essential for applications in electronics, photonics, and optoelectronics. Here, the evolution of the atomic scale epitaxial graphene-buffer-layer–SiC interface through hydrogen intercalation, thermal annealings, UV-ozone etching and oxygen exposure is studied by means of single microparticle mediated surface enhanced Raman spectroscopy (smSERS). The evolution of the interfacial chemistry in the buffer layer is monitored through the Raman band at 2132 cm −1 corresponding to the Si-H stretch mode. Graphene quality is monitored directly by the selectively enhanced Raman signal of graphene compared to the SiC substrate signal. Through smSERS, a simultaneous correlation between optimized hydrogen intercalation in epitaxial graphene/SiC and an increase in graphene quality is uncovered. Following UV-ozone treatment, a fully hydrogen passivated interface is retained, while a moderate degradation in the quality of the hydrogen intercalated quasi-freestanding graphene is observed. While hydrogen intercalated defect free quasi-freestanding graphene is expected to be robust upon UV-ozone, thermal annealing, and oxygen exposure, ozonolytic reactivity at the edges of H-intercalated defected graphene results in enhanced amorphization of the quasi-freestanding (compared to non-intercalated) graphene, leading ultimately to its complete etching

  20. Surface modification of the MoSiON phase shift mask to reduce critical dimension variation

    Science.gov (United States)

    Choo, Hyeokseong; Seo, Dongwan; Lim, Sangwoo

    2013-10-01

    Phase shift masks (PSMs) were introduced to extend the limits of optical lithography. However, cleaning a MoSiON-based PSM pattern with an ammonium hydroxide/hydrogen peroxide mixture (APM), although efficient at cleaning the PSM pattern, etches the PSM layer, inducing changes in the phase angle and transmittance due to the introduction of variation of the critical dimension (CD). In this study, we investigated the effects of plasma treatment and furnace annealing on the etching of the MoSiON PSM in APM. In particular, we found that the etch behavior and surface chemical state after each treatment were correlated. We also compared variations in the CD between patterned PSM layers and blank masks. After O2 or N2 plasma treatment, the top surface of MoSiON had a thicker transition layer with an extreme increase in O, and a huge variation in CD was also observed after APM treatment. However, CD variation of the patterned MoSiON layer was minimal when the sample was first annealed in NH3 ambient gas and then subjected to APM treatment. This phenomenon may be related to an increase in the portion of the SiO2-like state at the top surface of the MoSiON PSM layer and its optimization without a change in the transition layer thickness.

  1. Surface morphology of amorphous germanium thin films following thermal outgassing of SiO{sub 2}/Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Valladares, L. de los Santos, E-mail: ld301@cam.ac.uk [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom); Dominguez, A. Bustamante [Laboratorio de Cerámicos y Nanomateriales, Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, Apartado Postal 14-0149, Lima (Peru); Llandro, J.; Holmes, S. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom); Quispe, O. Avalos [Laboratorio de Cerámicos y Nanomateriales, Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, Apartado Postal 14-0149, Lima (Peru); Langford, R. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom); Aguiar, J. Albino [Laboratório de Supercondutividade e Materiais Avançados, Departamento de Física, Universidade Federal de Pernambuco, 50670-901, Recife (Brazil); Barnes, C.H.W. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom)

    2014-10-15

    Highlights: • Annealing promotes outgassing of SiO{sub 2}/Si wafers. • Outgassing species embed in the a-Ge film forming bubbles. • The density of bubbles obtained by slow annealing is smaller than by rapid annealing. • The bubbles explode after annealing the samples at 800 °C. • Surface migration at higher temperatures forms polycrystalline GeO{sub 2} islands. - Abstract: In this work we report the surface morphology of amorphous germanium (a-Ge) thin films (140 nm thickness) following thermal outgassing of SiO{sub 2}/Si substrates. The thermal outgassing was performed by annealing the samples in air at different temperatures from 400 to 900 °C. Annealing at 400 °C in slow (2 °C/min) and fast (10 °C/min) modes promotes the formation of bubbles on the surface. A cross sectional view by transmission electron microscope taken of the sample slow annealed at 400 °C reveals traces of gas species embedded in the a-Ge film, allowing us to propose a possible mechanism for the formation of the bubbles. The calculated internal pressure and number of gas molecules for this sample are 30 MPa and 38 × 10{sup 8}, respectively. Over an area of 22 × 10{sup −3} cm{sup 2} the density of bubbles obtained at slow annealing (9 × 10{sup 3} cm{sup −2}) is smaller than that at rapid annealing (6.4 × 10{sup 4} cm{sup −2}), indicating that the amount of liberated gas in both cases is only a fraction of the total gas contained in the substrate. After increasing the annealing temperature in the slow mode, bubbles of different diameters (from tens of nanometers up to tens of micrometers) randomly distribute over the Ge film and they grow with temperature. Vertical diffusion of the outgas species through the film dominates the annealing temperature interval 400–600 °C, whereas coalescence of bubbles caused by lateral diffusion is detected after annealing at 700 °C. The bubbles explode after annealing the samples at 800 °C. Annealing at higher temperatures, such as

  2. Surface morphology of amorphous germanium thin films following thermal outgassing of SiO2/Si substrates

    International Nuclear Information System (INIS)

    Valladares, L. de los Santos; Dominguez, A. Bustamante; Llandro, J.; Holmes, S.; Quispe, O. Avalos; Langford, R.; Aguiar, J. Albino; Barnes, C.H.W.

    2014-01-01

    Highlights: • Annealing promotes outgassing of SiO 2 /Si wafers. • Outgassing species embed in the a-Ge film forming bubbles. • The density of bubbles obtained by slow annealing is smaller than by rapid annealing. • The bubbles explode after annealing the samples at 800 °C. • Surface migration at higher temperatures forms polycrystalline GeO 2 islands. - Abstract: In this work we report the surface morphology of amorphous germanium (a-Ge) thin films (140 nm thickness) following thermal outgassing of SiO 2 /Si substrates. The thermal outgassing was performed by annealing the samples in air at different temperatures from 400 to 900 °C. Annealing at 400 °C in slow (2 °C/min) and fast (10 °C/min) modes promotes the formation of bubbles on the surface. A cross sectional view by transmission electron microscope taken of the sample slow annealed at 400 °C reveals traces of gas species embedded in the a-Ge film, allowing us to propose a possible mechanism for the formation of the bubbles. The calculated internal pressure and number of gas molecules for this sample are 30 MPa and 38 × 10 8 , respectively. Over an area of 22 × 10 −3 cm 2 the density of bubbles obtained at slow annealing (9 × 10 3 cm −2 ) is smaller than that at rapid annealing (6.4 × 10 4 cm −2 ), indicating that the amount of liberated gas in both cases is only a fraction of the total gas contained in the substrate. After increasing the annealing temperature in the slow mode, bubbles of different diameters (from tens of nanometers up to tens of micrometers) randomly distribute over the Ge film and they grow with temperature. Vertical diffusion of the outgas species through the film dominates the annealing temperature interval 400–600 °C, whereas coalescence of bubbles caused by lateral diffusion is detected after annealing at 700 °C. The bubbles explode after annealing the samples at 800 °C. Annealing at higher temperatures, such as 900 °C, leads to surface migration of the

  3. Annealing studies of substoichiometric amorphous SiO{sub x} layers for c-Si surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Einsele, F.; Beyer, W.; Rau, U. [IEF-5 Photovoltaik, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany)

    2010-04-15

    We investigate thermal stability of amorphous substoichiometric silicon-oxide alloys with oxygen concentrations from 0 to 10 at-%. Annealing experiments, including effective lifetime measurements, hydrogen effusion, and infrared absorption spectroscopy, yield a surface passivation on p-type float-zone crystalline silicon wafers with maximum effective lifetimes up to 1.5 ms. The thermal stability of the passivation increases with increasing oxygen concentration of the films. For oxygen concentrations above 5%, we observe a decrease of passivation due to the formation of voids in the material, which shows in a low temperature peak of the H effusion spectra. Annealing leads to a structural transition of the material which is accompanied by an increase in effective lifetime. The stretching mode absorptions of Si- O-Si molecular vibrations near 1000 cm{sup -1} shift towards higher wavenumbers, both with increased oxygen concentration and upon annealing of the films. For increased oxygen concentrations, the Si-H stretching modes shift from predominantly 2000 cm{sup -1} to 2090 cm{sup -1}.(copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Role of SiC substrate surface on local tarnishing of deposited silver mirror stacks

    Science.gov (United States)

    Limam, Emna; Maurice, Vincent; Seyeux, Antoine; Zanna, Sandrine; Klein, Lorena H.; Chauveau, Grégory; Grèzes-Besset, Catherine; Savin De Larclause, Isabelle; Marcus, Philippe

    2018-04-01

    The role of the SiC substrate surface on the resistance to the local initiation of tarnishing of thin-layered silver stacks for demanding space mirror applications was studied by combined surface and interface analysis on model stack samples deposited by cathodic magnetron sputtering and submitted to accelerated aging in gaseous H2S. It is shown that suppressing the surface pores resulting from the bulk SiC material production process by surface pretreatment eliminates the high aspect ratio surface sites that are imperfectly protected by the SiO2 overcoat after the deposition of silver. The formation of channels connecting the silver layer to its environment through the failing protection layer at the surface pores and locally enabling H2S entry and Ag2S growth as columns until emergence at the stack surface is suppressed, which markedly delays tarnishing initiation and thereby preserves the optical performance. The results revealed that residual tarnishing initiation proceeds by a mechanism essentially identical in nature but involving different pathways short circuiting the protection layer and enabling H2S ingress until the silver layer. These permeation pathways are suggested to be of microstructural origin and could correspond to the incompletely coalesced intergranular boundaries of the SiO2 layer.

  5. Nanofabrication on a Si surface by slow highly charged ion impact

    International Nuclear Information System (INIS)

    Tona, Masahide; Watanabe, Hirofumi; Takahashi, Satoshi; Nakamura, Nobuyuki; Yoshiyasu, Nobuo; Sakurai, Makoto; Terui, Toshifumi; Mashiko, Shinro; Yamada, Chikashi; Ohtani, Shunsuke

    2007-01-01

    We have observed surface chemical reactions which occur at the impact sites on a Si(1 1 1)-(7 x 7) surface and a highly oriented pyrolytic graphite (HOPG) surface bombarded by highly charged ions (HCIs) by using a scanning tunneling microscope (STM). Crater structures are formed on the Si(1 1 1)-(7 x 7) surface by single I 50+ -impacts. STM-observation for the early step of oxidation on the surface suggests that the impact site is so active that dangling bonds created by HCI impacts are immediately quenched by reaction with residual gas molecules. We show also the selective adsorption of organic molecules at a HCI-induced impact site on the HOPG surface

  6. Topological states in a two-dimensional metal alloy in Si surface: BiAg/Si(111)-4 ×4 surface

    Science.gov (United States)

    Zhang, Xiaoming; Cui, Bin; Zhao, Mingwen; Liu, Feng

    2018-02-01

    A bridging topological state with a conventional semiconductor platform offers an attractive route towards future spintronics and quantum device applications. Here, based on first-principles and tight-binding calculations, we demonstrate the existence of topological states hosted by a two-dimensional (2D) metal alloy in a Si surface, the BiAg/Si(111)-4 ×4 surface, which has already been synthesized experimentally. It exhibits a topological insulating state with an energy gap of 71 meV (˜819 K ) above the Fermi level and a topological metallic state with quasiquantized conductance below the Fermi level. The underlying mechanism leading to the formation of such nontrivial states is revealed by analysis of the "charge-transfer" and "orbital-filtering" effect of the Si substrate. A minimal effective tight-binding model is employed to reveal the formation mechanism of the topological states. Our finding opens opportunities to detect topological states and measure its quantized conductance in a large family of 2D surface metal alloys, which have been or are to be grown on semiconductor substrates.

  7. Adsorption/desorption kinetics of Na atoms on reconstructed Si (111)-7 x 7 surface

    International Nuclear Information System (INIS)

    Chauhan, Amit Kumar Singh; Govind; Shivaprasad, S.M.

    2010-01-01

    Self-assembled nanostructures on a periodic template are fundamentally and technologically important as they put forward the possibility to fabricate and pattern micro/nano-electronics for sensors, ultra high-density memories and nanocatalysts. Alkali-metal (AM) nanostructure grown on a semiconductor surface has received considerable attention because of their simple hydrogen like electronic structure. However, little efforts have been made to understand the fundamental aspects of the growth mechanism of self-assembled nanostructures of AM on semiconductor surfaces. In this paper, we report organized investigation of kinetically controlled room-temperature (RT) adsorption/desorption of sodium (Na) metal atoms on clean reconstructed Si (111)-7 x 7 surface, by X-ray photoelectron spectroscopy (XPS). The RT uptake curve shows a layer-by-layer growth (Frank-vander Merve growth) mode of Na on Si (111)-7 x 7 surfaces and a shift is observed in the binding energy position of Na (1s) spectra. The thermal stability of the Na/Si (111) system was inspected by annealing the system to higher substrate temperatures. Within a temperature range from RT to 350 o C, the temperature induced mobility to the excess Na atoms sitting on top of the bilayer, allowing to arrange themselves. Na atoms desorbed over a wide temperature range of 370 o C, before depleting the Si (111) surface at temperature 720 o C. The acquired valence-band (VB) spectra during Na growth revealed the development of new electronic-states near the Fermi level and desorption leads the termination of these. For Na adsorption up to 2 monolayers, decrease in work function (-1.35 eV) was observed, whereas work function of the system monotonically increases with Na desorption from the Si surface as observed by other studies also. This kinetic and thermodynamic study of Na adsorbed Si (111)-7 x 7 system can be utilized in fabrication of sensors used in night vision devices.

  8. Transport characteristics of minority electrons across surface-activated-bonding based p-Si/n-4H-SiC heterointerfaces

    Science.gov (United States)

    Shigekawa, Naoteru; Shimizu, Sae; Liang, Jianbo; Shingo, Masato; Shiojima, Kenji; Arai, Manabu

    2018-02-01

    We investigate the transport properties of minority electrons across p-Si/n-4H-SiC interfaces fabricated using surface activated bonding. The transport properties along each direction are examined by measuring the photoresponse (PR) of p-Si/n-4H-SiC heterojunctions and characterizing 4H-SiC/Si heterojunction bipolar transistors (HBTs). The photoyield obtained in PR measurements is sensitive to the concentration of acceptors in p-Si and reverse-bias voltages, which indicates that the energy of optically excited electrons in p-Si is first relaxed and then they are driven to n-SiC through the tunneling process. By the postprocess annealing of HBTs, the properties of emitter/base interfaces are improved so that the current gain is drastically increased, which means that the Si/4H-SiC interfaces are in metastable states when the device process is completed. A maximum current gain of >10 is demonstrated.

  9. Disordered electrical potential observed on the surface of SiO2 by electric field microscopy

    International Nuclear Information System (INIS)

    GarcIa, N; Yan Zang; Ballestar, A; Barzola-Quiquia, J; Bern, F; Esquinazi, P

    2010-01-01

    The electrical potential on the surface of ∼300 nm thick SiO 2 grown on single-crystalline Si substrates has been characterized at ambient conditions using electric field microscopy. Our results show an inhomogeneous potential distribution with fluctuations up to ∼0.4 V within regions of 1 μm. The potential fluctuations observed at the surface of these usual dielectric holders of graphene sheets should induce strong variations in the graphene charge densities and provide a simple explanation for some of the anomalous behaviors of the transport properties of graphene.

  10. Desorption dynamics of deuterium molecules from the Si(100)-(3×1) dideuteride surface

    OpenAIRE

    Niida, T; Tsurumaki, Hiroshi; Namiki, Akira

    2006-01-01

    We measured polar angle ()-resolved time-of-flight spectra of D2 molecules desorbing from the Si(100)-(3×1) dideuteride surface. The desorbing D2 molecules exhibit a considerable translational heating with mean desorption kinetic energies of 0.25 eV, which is mostly independent of the desorption angles for 0°30°. The observed desorption dynamics of deuterium was discussed along the principle of detailed balance to predict their adsorption dynamics onto the monohydride Si surface.

  11. Enhanced extraction efficiency of fluorescent SiC by surface nanostructuring

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicius, Valdas; Yakimova, Rositza

    2012-01-01

    Antireflective structures were fabricated on fluorescent 6H-SiC for white LEDs to enhance the extraction efficiency. Average surface reflectance decreased from 22.1% to 5.1% over a broad range, and luminescence intensity was enhanced by 41%.......Antireflective structures were fabricated on fluorescent 6H-SiC for white LEDs to enhance the extraction efficiency. Average surface reflectance decreased from 22.1% to 5.1% over a broad range, and luminescence intensity was enhanced by 41%....

  12. Selective adsorption of toluene-3,4-dithiol on Si(553)-Au surfaces

    Science.gov (United States)

    Suchkova, Svetlana; Hogan, Conor; Bechstedt, Friedhelm; Speiser, Eugen; Esser, Norbert

    2018-01-01

    The adsorption of small organic molecules onto vicinal Au-stabilized Si(111) surfaces is shown to be a versatile route towards controlled growth of ordered organic-metal hybrid one-dimensional nanostructures. Density functional theory is used to investigate the site-specific adsorption of toluene-3,4-dithiol (TDT) molecules onto the clean Si(553)-Au surface and onto a co-doped surface whose steps are passivated by hydrogen. We find that the most reactive sites involve bonding to silicon at the step edge or on the terraces, while gold sites are relatively unfavored. H passivation and TDT adsorption both induce a controlled charge redistribution within the surface layer, causing the surface metallicity, electronic structure, and chemical reactivity of individual adsorption sites to be substantially altered.

  13. Single OR molecule and OR atomic circuit logic gates interconnected on a Si(100)H surface

    International Nuclear Information System (INIS)

    Ample, F; Joachim, C; Duchemin, I; Hliwa, M

    2011-01-01

    Electron transport calculations were carried out for three terminal OR logic gates constructed either with a single molecule or with a surface dangling bond circuit interconnected on a Si(100)H surface. The corresponding multi-electrode multi-channel scattering matrix (where the central three terminal junction OR gate is the scattering center) was calculated, taking into account the electronic structure of the supporting Si(100)H surface, the metallic interconnection nano-pads, the surface atomic wires and the molecule. Well interconnected, an optimized OR molecule can only run at a maximum of 10 nA output current intensity for a 0.5 V bias voltage. For the same voltage and with no molecule in the circuit, the output current of an OR surface atomic scale circuit can reach 4 μA.

  14. Growth of graphene from SiC{0001} surfaces and its mechanisms

    International Nuclear Information System (INIS)

    Norimatsu, Wataru; Kusunoki, Michiko

    2014-01-01

    Graphene, a one-atom-layer carbon material, can be grown by thermal decomposition of SiC. On Si-terminated SiC(0001), graphene nucleates at steps and grows layer-by-layer, and as a result a homogeneous monolayer or bilayer can be obtained. We demonstrate this mechanism both experimentally and theoretically. On the C-face (000 1-bar ), multilayer graphene nucleates not only at steps, but also on the terraces. These differences reflect the distinct differences in the reactivity of these faces. Due to its high quality and structural controllability, graphene on SiC{0001} surfaces will be a platform for high-speed graphene device applications. (paper)

  15. Behind the Nature of Titanium Oxide Excellent Surface Passivation and Carrier Selectivity of c-Si

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym; Crovetto, Andrea; Hansen, Ole

    We present an expanded study of the passivation properties of titanium dioxide (TiO2) on p-type crystalline silicon (c-Si). We report a low surface recombination velocity (16 cm/s) for TiO2 passivation layers with a thin tunnelling oxide interlayer (SiO2 or Al2O3) on p-type crystalline silicon (c......-Si). The TiO2 films were deposited by thermal atomic layer deposition (ALD) at temperatures in the range of 80-300  ̊C using titanium tetrachloride (TiCl4) as Ti precursor and water as the oxidant. The influence of TiO2 thickness (5, 10, 20 nm), presence of additional tunneling interlayer (SiO2 or Al2O3...

  16. Chemical, electronic, and magnetic structure of LaFeCoSi alloy: Surface and bulk properties

    Energy Technology Data Exchange (ETDEWEB)

    Lollobrigida, V. [Dipartimento di Scienze, Università Roma Tre, I-00146 Rome (Italy); Dipartimento di Matematica e Fisica, Università Roma Tre, I-00146 Rome (Italy); Basso, V.; Kuepferling, M.; Coïsson, M.; Olivetti, E. S.; Celegato, F. [Istituto Nazionale di Ricerca Metrologica (INRIM), I-10135 Torino (Italy); Borgatti, F. [CNR, Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), I-40129 Bologna (Italy); Torelli, P.; Panaccione, G. [CNR, Istituto Officina dei Materiali (IOM), Lab. TASC, I-34149 Trieste (Italy); Tortora, L. [Laboratorio di Analisi di Superficie, Dipartimento di Matematica e Fisica, Università Roma Tre, I-00146 Rome (Italy); Dipartimento di Ingegneria Meccanica, Università Tor Vergata, I-00133 Rome (Italy); Stefani, G.; Offi, F. [Dipartimento di Scienze, Università Roma Tre, I-00146 Rome (Italy)

    2014-05-28

    We investigate the chemical, electronic, and magnetic structure of the magnetocaloric LaFeCoSi compound with bulk and surface sensitive techniques. We put in evidence that the surface retains a soft ferromagnetic behavior at temperatures higher than the Curie temperature of the bulk due to the presence of Fe clusters at the surface only. This peculiar magnetic surface effect is attributed to the exchange interaction between the ferromagnetic Fe clusters located at the surface and the bulk magnetocaloric alloy, and it is used here to monitor the magnetic properties of the alloy itself.

  17. Chemical, electronic, and magnetic structure of LaFeCoSi alloy: Surface and bulk properties

    International Nuclear Information System (INIS)

    Lollobrigida, V.; Basso, V.; Kuepferling, M.; Coïsson, M.; Olivetti, E. S.; Celegato, F.; Borgatti, F.; Torelli, P.; Panaccione, G.; Tortora, L.; Stefani, G.; Offi, F.

    2014-01-01

    We investigate the chemical, electronic, and magnetic structure of the magnetocaloric LaFeCoSi compound with bulk and surface sensitive techniques. We put in evidence that the surface retains a soft ferromagnetic behavior at temperatures higher than the Curie temperature of the bulk due to the presence of Fe clusters at the surface only. This peculiar magnetic surface effect is attributed to the exchange interaction between the ferromagnetic Fe clusters located at the surface and the bulk magnetocaloric alloy, and it is used here to monitor the magnetic properties of the alloy itself.

  18. A Low O/Si Ratio on the Surface of Mercury: Evidence for Silicon Smelting?

    Science.gov (United States)

    McCubbin, Francis M.; Vander Kaaden, Kathleen E.; Peplowski, Patrick N.; Bell, Aaron S.; Nittler, Larry R.; Boyce, Jeremy W.; Evans, Larry G.; Keller, Lindsay P.; Elardo, Stephen M.; McCoy, Timothy J.

    2017-10-01

    Data from the Gamma-Ray Spectrometer (GRS) that flew on the MErcury Surface, Space ENvironment, GEochemistry, and Ranging spacecraft indicate that the O/Si weight ratio of Mercury's surface is 1.2 ± 0.1. This value is lower than any other celestial surface that has been measured by GRS and suggests that 12-20% of the surface materials on Mercury are composed of Si-rich, Si-Fe alloys. The origin of the metal is best explained by a combination of space weathering and graphite-induced smelting. The smelting process would have been facilitated by interaction of graphite with boninitic and komatiitic parental liquids. Graphite entrained at depth would have reacted with FeO components dissolved in silicate melt, resulting in the production of up to 0.4-0.9 wt % CO from the reduction of FeO to Fe0—CO production that could have facilitated explosive volcanic processes on Mercury. Once the graphite-entrained magmas erupted, the tenuous atmosphere on Mercury prevented the buildup of CO over the lavas. The partial pressure of CO would have been sufficiently low to facilitate reaction between graphite and SiO2 components in silicate melts to produce CO and metallic Si. Although exotic, Si-rich metal as a primary smelting product is hypothesized on Mercury for three primary reasons: (1) low FeO abundances of parental magmas, (2) elevated abundances of graphite in the crust and regolith, and (3) the presence of only a tenuous atmosphere at the surface of the planet within the 3.5-4.1 Ga timespan over which the planet was resurfaced through volcanic processes.

  19. Effect of surface morphology and densification on the infrared emissivity of C/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Fuyuan, E-mail: wangfy1986@gmail.com; Cheng, Laifei; Zhang, Qing, E-mail: zhangqing@nwpu.edu.cn; Zhang, Litong

    2014-09-15

    Highlights: • The cauliflower-like microstructure improved the infrared emissivity multiply. • The infrared emissivity decreased continually with the improving surface flatness. • The densification process boosted the infrared emissivity. - Abstract: The effects of surface morphology and densification on the infrared emissivity of 2D C/SiC composites were investigated in 6–16 μm from 1000 °C to 1600 °C. As the sample surface was polished, the reflection and scattering for the electromagnetic waves of thermal radiation were reduced, causing a sustained decrease in the infrared emissivity. The space-variant polarizations caused by the cauliflower-like microstructure were enervated in the smooth surface, which enhanced the reduction trendy in the infrared emissivity. In densification process, the increasing SiC content and the growing amount of the cauliflower-like microstructure on sample surface improved the infrared emissivity of C/SiC composites, while the decreasing porosity decreased it. Due to the greater positive effects on the thermal radiation during the densification process, the infrared emissivity of C/SiC composites increased successively with density.

  20. Self-trapping nature of Tl nanoclusters on the Si(111)-7x7 surface

    International Nuclear Information System (INIS)

    Hwang, C G; Kim, N D; Lee, G; Shin, S Y; Kim, J S; Chung, J W

    2008-01-01

    We have studied properties of thallium (Tl) nanoclusters formed on the Si(111)-7x7 surface at room temperature (RT) by utilizing photoemission spectroscopy (PES) and high-resolution electron-energy-loss spectroscopy (HREELS) combined with first principles calculations. Our PES data reveal that the surface states stemming from the Si substrate remain quite inert with Tl adsorption producing no Tl-induced state until saturation at Tl coverage θ=0.21 monolayers. Such a behavior, in sharp contrast with the extremely reactive surface states upon the formation of Na or Li nanoclusters, together with the presence of a unique Tl-induced loss peak in HREELS spectra suggests no strong Si-Tl bonding, and is well understood in terms of gradual filling of Si dangling bonds with increasing θ. Our calculation further indicates the presence of several metastable atomic structures of Tl nanoclusters at RT rapidly transforming from one to another faster than 10 10 flippings per second. We thus conclude that the highly mobile Tl atoms form self-trapped nanoclusters within the attractive basins of the Si substrate at RT with several metastable phases. The mobile and multi-phased nature of Tl nanoclusters not only accounts for all the existing experimental observations available at present, but also provides an example of self-trapping of atoms in a nanometre-scale region

  1. Behaviour of total surface charge in SiO2-Si system under short-pulsed ultraviolet irradiation cycles characterised by surface photo voltage technique

    International Nuclear Information System (INIS)

    Kang, Ban-Hong; Lee, Wah-Pheng; Yow, Ho-Kwang; Tou, Teck-Yong

    2009-01-01

    Effects of time-accumulated ultraviolet (UV) irradiation and surface treatment on thermally oxidized p-type silicon wafers were investigated by using the surface photo voltage (SPV) technique via the direct measurement of the total surface charge, Q SC . The rise and fall times of Q sc curves, as a function of accumulated UV irradiation, depended on the thermal oxide thickness. A simple model was proposed to explain the time-varying characteristics of Q sc based on the UV-induced bond breaking of SiOH and SiH, and photoemission of bulk electrons to wafer surface where O 2 - charges were formed. While these mechanisms resulted in charge variations and hence in Q sc , these could be removed by rinsing the silicon wafers in de-ionized water followed by spin-dry or blow-dry by an ionizer fan. Empirical parameters were used in the model simulations and curve-fitting of Q SC . The simulated results suggested that initial changes in the characteristic behaviour of Q sc were mainly due to the net changes in the positive and negative charges, but subsequently were dominated by the accumulation of O 2 - during the UV irradiation.

  2. Self-activated, self-limiting reactions on Si surfaces

    DEFF Research Database (Denmark)

    Morgen, Per; Hvam, Jeanette; Bahari, Ali

    , and the temperatures vary from room temperature to 10000C.The growth is in these cases self-limiting, with the optimal oxide thickness around 0.7-0.8 nm, at 5000C, and up to a few nm for nitride. The self-limiting oxide case was recently predicted by Alex Demkov in a structural optimization to minimise the total...... energy of an oxide system, which happened for an ordered structure, at a thickness of 0.7-0.8 nm. Thus this thin oxide structure has definite crystalline features. We have closely monitored the reaction kinetics with normal x-ray induced photoelectron spectroscopies, and also the structure, composition...... and electrical properties of the system, with surface sensitive, high resolution core level photoelectron spectroscopy. The growth kinetics is well fitted by a Hill function, with parameters, which give information about the character of the process. This function describes a self-activated process. Thus...

  3. Silver-coated Si nanograss as highly sensitive surface-enhanced Raman spectroscopy substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Jing; Kuo, Huei Pei; Hu, Min; Li, Zhiyong; Williams, R.S. [Hewlett-Packard Laboratories, Information and Quantum Systems Laboratory, Palo Alto, CA (United States); Ou, Fung Suong [Hewlett-Packard Laboratories, Information and Quantum Systems Laboratory, Palo Alto, CA (United States); Rice University, Department of Applied Physics, Houston, TX (United States); Stickle, William F. [Hewlett-Packard Company, Advanced Diagnostic Lab, Corvallis, OR (United States)

    2009-09-15

    We created novel surface-enhanced Raman spectroscopy (SERS) substrates by metalization (Ag) of Si nanograss prepared by a Bosch process which involves deep reactive ion etching of single crystalline silicon. No template or lithography was needed for making the Si nanograss, thus providing a simple and inexpensive method to achieve highly sensitive large-area SERS substrates. The dependence of the SERS effect on the thickness of the metal deposition and on the surface morphology and topology of the substrate prior to metal deposition was studied in order to optimize the SERS signals. We observed that the Ag-coated Si nanograss can achieve uniform SERS enhancement over large area ({proportional_to}1 cm x 1 cm) with an average EF (enhancement factor) of 4.2 x 10{sup 8} for 4-mercaptophenol probe molecules. (orig.)

  4. Static and dynamic buckling of reconstructions at triple steps on Si(111) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Zhachuk, R., E-mail: zhachuk@gmail.com; Teys, S. [Institute of Semiconductor Physics, pr. Lavrentyeva 13, Novosibirsk 630090 (Russian Federation); Coutinho, J. [Department of Physics and I3N, University of Aveiro, Campus Santiago, 3810-193 Aveiro (Portugal); Rayson, M. J. [Department of Chemistry, University of Surrey, Guildford GU2 7XH (United Kingdom); Briddon, P. R. [School of Electrical, Electronic and Computer Engineering, Newcastle University, Newcastle Upon Tyne NE1 7RU (United Kingdom)

    2014-10-27

    Triple steps on Si(111) surfaces are popular building blocks for bottom-up nanostructure assembly, conferring size uniformity and precise positioning of growing nanostructures. In this work, we employ the Si(7 7 10) regular stepped surface as model system to study the triple steps by scanning tunneling microscopy (STM) and large-scale first-principles calculations. We find a surprising cohabitation of reconstruction elements at the step edge that either buckles statically or dynamically at room temperature. The driving force for the observed sequence of buckling patterns is traced back to Coulomb interactions involving charged adatoms and rest-atoms lying on a mini-terrace. These results reconcile the Si(111) triple step model with the experimental STM data.

  5. Isotopic effects in vibrational relaxation dynamics of H on a Si(100) surface

    Science.gov (United States)

    Bouakline, F.; Lorenz, U.; Melani, G.; Paramonov, G. K.; Saalfrank, P.

    2017-10-01

    In a recent paper [U. Lorenz and P. Saalfrank, Chem. Phys. 482, 69 (2017)], we proposed a robust scheme to set up a system-bath model Hamiltonian, describing the coupling of adsorbate vibrations (system) to surface phonons (bath), from first principles. The method is based on an embedded cluster approach, using orthogonal coordinates for system and bath modes, and an anharmonic phononic expansion of the system-bath interaction up to second order. In this contribution, we use this model Hamiltonian to calculate vibrational relaxation rates of H-Si and D-Si bending modes, coupled to a fully H(D)-covered Si(100)-( 2 × 1 ) surface, at zero temperature. The D-Si bending mode has an anharmonic frequency lying inside the bath frequency spectrum, whereas the H-Si bending mode frequency is outside the bath Debye band. Therefore, in the present calculations, we only take into account one-phonon system-bath couplings for the D-Si system and both one- and two-phonon interaction terms in the case of H-Si. The computation of vibrational lifetimes is performed with two different approaches, namely, Fermi's golden rule, and a generalized Bixon-Jortner model built in a restricted vibrational space of the adsorbate-surface zeroth-order Hamiltonian. For D-Si, the Bixon-Jortner Hamiltonian can be solved by exact diagonalization, serving as a benchmark, whereas for H-Si, an iterative scheme based on the recursive residue generation method is applied, with excellent convergence properties. We found that the lifetimes obtained with perturbation theory, albeit having almost the same order of magnitude—a few hundred fs for D-Si and a couple of ps for H-Si—, are strongly dependent on the discretized numerical representation of the bath spectral density. On the other hand, the Bixon-Jortner model is free of such numerical deficiencies, therefore providing better estimates of vibrational relaxation rates, at a very low computational cost. The results obtained with this model clearly show

  6. Equilibrium shapes and surface selection of nanostructures in 6H-SiC

    Science.gov (United States)

    Kondo, Sosuke; Parish, Chad M.; Koyanagi, Takaaki; Katoh, Yutai

    2017-04-01

    The equilibrium shape of 6H-SiC nanostructures and their surfaces were studied by analyzing nano-void (˜10 nm) shapes, which were introduced in monocrystalline 6H-SiC by high-temperature neutron irradiation, using transmission electron microscopy. The nano-voids were determined to be irregular icosahedrons truncated with six { 1 ¯ 100 }, twelve { 1 ¯ 103 }, one smaller top-basal, and one larger bottom-basal planes, which suggests that { 1 ¯ 100 } and { 1 ¯ 103 } are the next stable surface class after the basal planes. The relatively frequent absence of the { 1 ¯ 100 } surface in the nano-voids indicated that the ( 1 ¯ 10 3 ¯ ) surface type is energetically rather stable. These non-basal surfaces were found not to be atomically flat due to the creation of nanofacets with half unit-cell height in the c-axis. The { 1 ¯ 100 } and { 1 ¯ 103 } surfaces were classified as two and four face types according to their possible nanofacets and surface termination, respectively. We also discuss the surface energy difference between the ( 1 ¯ 10 3 ¯ ) and ( 1 ¯ 103 ) face types in relation to the energy balance within the equilibrium, but irregular, polyhedron, in which the ( 1 ¯ 103 ) surface had double the surface energy of the ( 1 ¯ 10 3 ¯ ) surface (˜3900 erg/cm2).

  7. A surface-mediated siRNA delivery system developed with chitosan/hyaluronic acid-siRNA multilayer films through layer-by-layer self-assembly

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Lijuan [Shanghai Key Laboratory of Magnetic Resonance, East China Normal University, Shanghai 200062 (China); Suzhou Novovita Bio-products Co., Ltd., Suzhou 215300 (China); Wu, Changlin, E-mail: Ph.Dclwu1314@sina.cn [Shanghai Key Laboratory of Magnetic Resonance, East China Normal University, Shanghai 200062 (China); Suzhou Novovita Bio-products Co., Ltd., Suzhou 215300 (China); Liu, Guangwan [Suzhou Novovita Bio-products Co., Ltd., Suzhou 215300 (China); Liao, Nannan [Shanghai Key Laboratory of Magnetic Resonance, East China Normal University, Shanghai 200062 (China); Suzhou Novovita Bio-products Co., Ltd., Suzhou 215300 (China); Zhao, Fang; Yang, Xuxia; Qu, Hongyuan [Suzhou Novovita Bio-products Co., Ltd., Suzhou 215300 (China); Peng, Bo [Shanghai Key Laboratory of Magnetic Resonance, East China Normal University, Shanghai 200062 (China); Chen, Li [Shanghai Key Laboratory of Magnetic Resonance, East China Normal University, Shanghai 200062 (China); Suzhou Novovita Bio-products Co., Ltd., Suzhou 215300 (China); Yang, Guang [Shanghai Key Laboratory of Magnetic Resonance, East China Normal University, Shanghai 200062 (China)

    2016-12-15

    Highlights: • We prepared Chitosan/Hyaluronic acid-siRNA multilayer as carrier to effectively load and protect siRNAs. • The stability and integrity of the siRNA was verified in the siRNA-loaded films. • The siRNA-loaded films showed good cells adhesion and gene silencing effect in eGFP-HEK 293T cells. • This is a new type of surface-mediated non-viral multilayer films. - Abstract: siRNA delivery remains highly challenging because of its hydrophilic and anionic nature and its sensitivity to nuclease degradation. Effective siRNA loading and improved transfection efficiency into cells represents a key problem. In our study, we prepared Chitosan/Hyaluronic acid-siRNA multilayer films through layer-by-layer self-assembly, in which siRNAs can be effectively loaded and protected. The construction process was characterized by FTIR, {sup 13}C NMR (CP/MAS), UV–vis spectroscopy, and atomic force microscopy (AFM). We presented the controlled-release performance of the films during incubation in 1 M NaCl solution for several days through UV–vis spectroscopy and polyacrylamide gel electrophoresis (PAGE). Additionally, we verified the stability and integrity of the siRNA loaded on multilayer films. Finally, the biological efficacy of the siRNA delivery system was evaluated via cells adhesion and gene silencing analyses in eGFP-HEK 293T cells. This new type of surface-mediated non-viral multilayer films may have considerable potential in the localized and controlled-release delivery of siRNA in mucosal tissues, and tissue engineering application.

  8. Impact of surface morphology of Si substrate on performance of Si/ZnO heterojunction devices grown by atomic layer deposition technique

    International Nuclear Information System (INIS)

    Hazra, Purnima; Singh, Satyendra Kumar; Jit, Satyabrata

    2015-01-01

    In this paper, the authors have investigated the structural, optical, and electrical characteristics of silicon nanowire (SiNW)/zinc oxide (ZnO) core–shell nanostructure heterojunctions and compared their characteristics with Si/ZnO planar heterojunctions to investigate the effect of surface morphology of Si substrate in the characteristics of Si/ZnO heterojunction devices. In this work, ZnO thin film was conformally deposited on both p-type 〈100〉 planar Si substrate and substrate with vertically aligned SiNW arrays by atomic layer deposition (ALD) method. The x-ray diffraction spectra show that the crystalline structures of Si/ZnO heterojunctions are having (101) preferred orientation, whereas vertically oriented SiNW/ZnO core–shell heterojunctions are having (002)-oriented wurtzite crystalline structures. The photoluminescence (PL) spectra of Si/ZnO heterojunctions show a very sharp single peak at 377 nm, corresponding to the bandgap of ZnO material with no other defect peaks in visible region; hence, these devices can have applications only in UV region. On the other hand, SiNW/ZnO heterojunctions are having band-edge peak at 378 nm along with a broad emission band, spreading almost throughout the entire visible region with a peak around 550 nm. Therefore, ALD-grown SiNW/ZnO heterojunctions can emit green and red light simultaneously. Reflectivity measurement of the heterojunctions further confirms the enhancement of visible region peak in the PL spectra of SiNW/ZnO heterojunctions, as the surface of the SiNW/ZnO heterojunctions exhibits extremely low reflectance ( 20%). The current–voltage characteristics of both Si/ZnO and SiNW/ZnO heterojunctions are measured with large area ohmic contacts on top and bottom of the structure to compare the electrical characteristics of the devices. Due to large surface to-volume ratio of SiNW/ZnO core–shell heterojunction devices, the output current rating is about 130 times larger compared to their planar

  9. The nanostructure and microstructure of SiC surface layers deposited by MWCVD and ECRCVD

    Science.gov (United States)

    Dul, K.; Jonas, S.; Handke, B.

    2017-12-01

    Scanning electron microscopy (SEM) and Atomic force microscopy (AFM) have been used to investigate ex-situ the surface topography of SiC layers deposited on Si(100) by Microwave Chemical Vapour Deposition (MWCVD) -S1,S2 layers and Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) - layers S3,S4, using silane, methane, and hydrogen. The effects of sample temperature and gas flow on the nanostructure and microstructure have been investigated. The nanostructure was described by three-dimensional surface roughness analysis based on digital image processing, which gives a tool to quantify different aspects of surface features. A total of 13 different numerical parameters used to describe the surface topography were used. The scanning electron image (SEM) of the microstructure of layers S1, S2, and S4 was similar, however, layer S3 was completely different; appearing like grains. Nonetheless, it can be seen that no grain boundary structure is present in the AFM images.

  10. Optical characterization of gold chains and steps on the vicinal Si(557) surface: Theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Hogan, Conor [Consiglio Nazionale delle Ricerche, Istituto di Struttura della Materia, via Fosso del Cavaliere 100, 00133 Rome (Italy); Department of Physics and European Theoretical Spectroscopy Facility (ETSF), University of Rome ' ' Tor Vergata' ' , Via della Ricerca Scientifica 1, 00133 Rome (Italy); McAlinden, Niall; McGilp, John F. [School of Physics, Trinity College Dublin, Dublin 2 (Ireland)

    2012-06-15

    We present a joint experimental-theoretical study of the reflectance anisotropy of clean and gold-covered Si(557), a vicinal surface of Si(111) upon which gold forms quasi-one-dimensional (1D) chains parallel to the steps. By means of first-principles calculations, we analyse the close relationship between the various surface structural motifs and the optical properties. Good agreement is found between experimental and computed spectra of single-step models of both clean and Au-adsorbed surfaces. Spectral fingerprints of monoatomic gold chains and silicon step edges are identified. The role of spin-orbit coupling (SOC) on the surface optical properties is examined, and found to have little effect. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Effect of input power and gas pressure on the roughening and selective etching of SiO2/Si surfaces in reactive plasmas

    International Nuclear Information System (INIS)

    Zhong, X. X.; Huang, X. Z.; Tam, E.; Ostrikov, K.; Colpo, P.; Rossi, F.

    2010-01-01

    We report on the application low-temperature plasmas for roughening Si surfaces which is becoming increasingly important for a number of applications ranging from Si quantum dots to cell and protein attachment for devices such as 'laboratory on a chip' and sensors. It is a requirement that Si surface roughening is scalable and is a single-step process. It is shown that the removal of naturally forming SiO 2 can be used to assist in the roughening of the surface using a low-temperature plasma-based etching approach, similar to the commonly used in semiconductor micromanufacturing. It is demonstrated that the selectivity of SiO 2 /Si etching can be easily controlled by tuning the plasma power, working gas pressure, and other discharge parameters. The achieved selectivity ranges from 0.4 to 25.2 thus providing an effective means for the control of surface roughness of Si during the oxide layer removal, which is required for many advance applications in bio- and nanotechnology.

  12. Low energy ion beam modification of Cu/Ni/Si(100) surface

    Indian Academy of Sciences (India)

    1569–1573. c Indian Academy of Sciences. Low energy ion beam modification of Cu/Ni/Si(100) surface. S K PARIDAa, V R R MEDICHERLAa,∗. , D K MISHRAa, S CHOUDHARYb, V SOLANKIb and. SHIKHA VARMAb. aDepartment of Physics, Institute of Technical Education & Research, Siksha 'O' Anusandhan University,.

  13. Low energy ion beam modification of Cu/Ni/Si(100) surface

    Indian Academy of Sciences (India)

    Abstract. Cu/Ni bilayer has been prepared by thermal evaporation of pure Cu and Ni metals onto Si(100) sur- face in high vacuum; it was sputtered using argon ion beam in ultra-high vacuum. The ion beam-induced surface and interface modification was investigated using X-ray photoelectron spectroscopy and atomic force ...

  14. Temperature suppression of STM-induced desorption of hydrogen on Si(100) surfaces

    DEFF Research Database (Denmark)

    Thirstrup, C.; Sakurai, M.; Nakayama, T.

    1999-01-01

    The temperature dependence of hydrogen (H) desorption from Si(100) H-terminated surfaces by a scanning tunneling microscope (STM) is reported for negative sample bias. It is found that the STM induced H desorption rate (R) decreases several orders of magnitude when the substrate temperature...... Science B.V. All rights reserved....

  15. Simulation and Measurement of Angle Resolved Reflectance from Black Si Surfaces

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Wu, Kaiyu; Schmidt, Michael Stenbæk

    2015-01-01

    In this work angle-resolved reflectance from nanostructured Si surfaces realized by maskless RIE texturing has been simulated and measured. The simulation and experimental measurement data show the same trend. Experimentally a total reflectance below 1% for incident angles below 30o and specular...

  16. Light trapping in a-Si/c-Si heterojunction solar cells by embedded ITO nanoparticles at rear surface

    Science.gov (United States)

    Dhar, Sukanta; Mandal, Sourav; Mitra, Suchismita; Ghosh, Hemanta; Mukherjee, Sampad; Banerjee, Chandan; Saha, Hiranmoy; Barua, A. K.

    2017-12-01

    The advantages of the amorphous silicon (a-Si)/crystalline silicon (c-Si) hetero junction technology are low temperature (<200 °C) processing and fewer process steps to fabricate the device. In this work, we used indium tin oxide (ITO) nanoparticles embedded in amorphous silicon material at the rear side of the crystalline wafer. The nanoparticles were embedded in silicon to have higher scattering efficiency, as has been established by simulation studies. It has been shown that significant photocurrent enhancements (32.8 mA cm‑2 to 35.1 mA cm‑2) are achieved because of high scattering and coupling efficiency of the embedded nanoparticles into the silicon device, leading to an increase in efficiency from 13.74% to 15.22%. In addition, we have observed a small increase in open circuit voltage. This may be due to the surface passivation during the ITO nanoparticle formation with hydrogen plasma treatment. We also support our experimental results by simulation, with the help of a commercial finite-difference time-domain (FDTD) software solution.

  17. Surface Floating 2D Bands in Layered Nonsymmorphic Semimetals: ZrSiS and Related Compounds

    Energy Technology Data Exchange (ETDEWEB)

    Topp, Andreas; Queiroz, Raquel; Grüneis, Andreas; Müchler, Lukas; Rost, Andreas W.; Varykhalov, Andrei; Marchenko, Dmitry; Krivenkov, Maxim; Rodolakis, Fanny; McChesney, Jessica L.; Lotsch, Bettina V.; Schoop, Leslie M.; Ast, Christian R.

    2017-12-01

    In this work, we present a model of the surface states of nonsymmorphic semimetals. These are derived from surface mass terms that lift the high degeneracy imposed in the band structure by the nonsymmorphic bulk symmetries. Reflecting the reduced symmetry at the surface, the bulk bands are strongly modified. This leads to the creation of two-dimensional floating bands, which are distinct from Shockley states, quantum well states or topologically protected surface states. We focus on the layered semimetal ZrSiS to clarify the origin of its surface states. We demonstrate an excellent agreement between DFT calculations and ARPES measurements and present an effective four-band model in which similar surface bands appear. Finally, we emphasize the role of the surface chemical potential by comparing the surface density of states in samples with and without potassium coating. Our findings can be extended to related compounds and generalized to other crystals with nonsymmorphic symmetries.

  18. A novel growth mode of alkane films on a SiO2 surface

    DEFF Research Database (Denmark)

    Mo, H.; Taub, H.; Volkmann, U.G.

    2003-01-01

    Synchrotron X-ray specular scattering measurements confirm microscopically a structural model recently inferred by very-high-resolution ellipsometry of a solid dotriacontane (n-C32H66 or C32) film formed by adsorption from solution onto a SiO2 surface. Sequentially, one or two layers adsorb on th...... previously for shorter alkanes deposited from the vapor phase onto solid surfaces....

  19. Surface passivation of n-type c-Si wafers by a-Si/SiO2/SiNx stack with <1 cm/s effective surface recombination velocity

    Science.gov (United States)

    Herasimenka, Stanislau Y.; Tracy, Clarence J.; Sharma, Vivek; Vulic, Natasa; Dauksher, William J.; Bowden, Stuart G.

    2013-10-01

    The passivation quality of an a-Si/SiO2/SiNx (aSON) stack deposited by conventional PECVD at corona charging of SiNx is presented. textured n-type Czochralski (CZ) substrates. It was shown that very good passivation can be achieved using 60 ms on 5000 Ω-cm and 20.9 ms on 1.7 Ω-cm mirror polished float zone (FZ) material passivated with aSON stacks.

  20. Surface Disordered Ge–Si Core–Shell Nanowires as Efficient Thermoelectric Materials

    DEFF Research Database (Denmark)

    Markussen, Troels

    2012-01-01

    Ge–Si core–shell nanowires with surface disorder are shown to be very promising candidates for thermoelectric applications. In atomistic calculations we find that surface roughness decreases the phonon thermal conductance significantly. On the contrary, the hole states are confined to the Ge core...... and are thereby shielded from the surface disorder, resulting in large electronic conductance values even in the presence of surface disorder. This decoupling of the electronic and phonon transport is very favorable for thermoelectric purposes, giving rise to promising room temperature figure of merits ZT > 2...

  1. Decreased bacteria activity on Si3N4 surfaces compared with PEEK or titanium

    Directory of Open Access Journals (Sweden)

    Puckett S

    2012-09-01

    Full Text Available Deborah Gorth,1 Sabrina Puckett,1 Batur Ercan,1 Thomas J Webster,1 Mohamed Rahaman,2 B Sonny Bal31School of Engineering and Department of Orthopaedics, Brown University, Providence, RI, 2Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO, 3Department of Orthopaedic Surgery, School of Medicine, University of Missouri, Columbia, MO, USAAbstract: A significant need exists for orthopedic implants that can intrinsically resist bacterial colonization. In this study, three biomaterials that are used in spinal implants – titanium (Ti, poly-ether-ether-ketone (PEEK, and silicon nitride (Si3N4 – were tested to understand their respective susceptibility to bacterial infection with Staphylococcus epidermidis, Staphlococcus aureus, Pseudomonas aeruginosa, Escherichia coli and Enterococcus. Specifically, the surface chemistry, wettability, and nanostructured topography of respective biomaterials, and the effects on bacterial biofilm formation, colonization, and growth were investigated. Ti and PEEK were received with as-machined surfaces; both materials are hydrophobic, with net negative surface charges. Two surface finishes of Si3N4 were examined: as-fired and polished. In contrast to Ti and PEEK, the surface of Si3N4 is hydrophilic, with a net positive charge. A decreased biofilm formation was found, as well as fewer live bacteria on both the as-fired and polished Si3N4. These differences may reflect differential surface chemistry and surface nanostructure properties between the biomaterials tested. Because protein adsorption on material surfaces affects bacterial adhesion, the adsorption of fibronectin, vitronectin, and laminin on Ti, PEEK, and Si3N4 were also examined. Significantly greater amounts of these proteins adhered to Si3N4 than to Ti or PEEK. The findings of this study suggest that surface properties of biomaterials lead to differential adsorption of physiologic proteins, and that this

  2. Comparison of structural re-organisations observed on pre-patterned vicinal Si(1 1 1) and Si(1 0 0) surfaces during heat treatment

    International Nuclear Information System (INIS)

    Kraus, A.; Neddermeyer, H.; Wulfhekel, W.; Sander, D.; Maroutian, T.; Dulot, F.; Martinez-Gil, A.; Hanbuecken, M.

    2004-01-01

    The creation of distinct, periodically structured vicinal Si(1 1 1) and (1 0 0) substrates has been studied using scanning tunnelling microscopy at various temperatures. The vicinal Si(1 1 1) and (1 0 0) surfaces transform under heat treatment in a self-organised way into flat and stepped regions. Optical and electron beam lithography is used to produce a regular hole pattern on the surfaces, which interferes with the temperature-driven morphological changes. The step motions are strongly influenced by this pre-patterning. Pre-patterned Si(1 1 1) surfaces transform into regular one-dimensional (1D) and two-dimensional (2D) morphologies, which consist of terraces and arrangements of step bunches and facets. On pre-patterned Si(1 0 0) substrates different re-organisations were observed where checkerboard-like 2D structures are obtained

  3. Low temperature Si processing integrating surface preparation, homoepitaxial growth, and SiO2 deposition into an untrahigh vacuum compatible chamber

    Science.gov (United States)

    Fountain, G. G.; Rudder, R. A.; Hattangady, S. V.; Vitkavage, D. J.; Markunas, R. J.

    1988-09-01

    Integration of low temperature Si processing steps using interconnected ultra-high (UHV) systems addresses two concerns of the semiconductor industry, low temperature processing and control of wafer environment between processing steps. We report results from a single remote plasma enhanced chemical vapor deposition (RPECVD) reactor with UHV capability. In situ surface preparations using a 300°C hydrogen plasma treatment have been successful in reconstructing Si(100) surfaces. SiO2 layers deposited on these surfaces at 250°C have resulted in MOS capacitors with minimum interface state densities of 1.8×1010 cm-2 eV-1. Homoepitaxial Si epitaxy originally nucleated at 520°C renucleated for growth temperatures as low at 235°C. This work clearly demonstrates the versatility and potential for the RPECVD process to become a member of a low temperature, integrated silicon processing facility.

  4. Growth rate and surface morphology of 4H-SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions

    Science.gov (United States)

    Mitani, Takeshi; Komatsu, Naoyoshi; Takahashi, Tetsuo; Kato, Tomohisa; Fujii, Kuniharu; Ujihara, Toru; Matsumoto, Yuji; Kurashige, Kazuhisa; Okumura, Hajime

    2014-09-01

    The growth rate and surface morphology of 4H-SiC crystals prepared by solution growth with Si1-xCrx and Si1-x-yCrxAly (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H-SiC crystals was suppressed using Si1-x-yCrxAly solvents even under highly supersaturated conditions where the growth rate exceeded 760 μm/h. Conversely, trench-like defects were observed in crystals grown with Si1-xCrx solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1-x-yCrxAly solvents was maintained at lower levels than that obtained using Si1-xCrx solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects.

  5. Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing.

    Science.gov (United States)

    Ye, Chao; Ran, Guang; Zhou, Wei; Shen, Qiang; Feng, Qijie; Lin, Jianxin

    2017-10-25

    Single crystal 6H-SiC wafers with 4° off-axis [0001] orientation were irradiated with carbon ions and then annealed at 900 °C for different time periods. The microstructure and surface morphology of these samples were investigated by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Ion irradiation induced SiC amorphization, but the surface was smooth and did not have special structures. During the annealing process, the amorphous SiC was recrystallized to form columnar crystals that had a large amount of twin structures. The longer the annealing time was, the greater the amount of recrystallized SiC would be. The recrystallization volume fraction was accorded with the law of the Johnson-Mehl-Avrami equation. The surface morphology consisted of tiny pieces with an average width of approximately 30 nm in the annealed SiC. The volume shrinkage of irradiated SiC layer and the anisotropy of newly born crystals during annealing process produced internal stress and then induced not only a large number of dislocation walls in the non-irradiated layer but also the initiation and propagation of the cracks. The direction of dislocation walls was perpendicular to the growth direction of the columnar crystal. The longer the annealing time was, the larger the length and width of the formed crack would be. A quantitative model of the crack growth was provided to calculate the length and width of the cracks at a given annealing time.

  6. Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing

    Directory of Open Access Journals (Sweden)

    Chao Ye

    2017-10-01

    Full Text Available Single crystal 6H-SiC wafers with 4° off-axis [0001] orientation were irradiated with carbon ions and then annealed at 900 °C for different time periods. The microstructure and surface morphology of these samples were investigated by grazing incidence X-ray diffraction (GIXRD, scanning electron microscopy (SEM, and transmission electron microscopy (TEM. Ion irradiation induced SiC amorphization, but the surface was smooth and did not have special structures. During the annealing process, the amorphous SiC was recrystallized to form columnar crystals that had a large amount of twin structures. The longer the annealing time was, the greater the amount of recrystallized SiC would be. The recrystallization volume fraction was accorded with the law of the Johnson–Mehl–Avrami equation. The surface morphology consisted of tiny pieces with an average width of approximately 30 nm in the annealed SiC. The volume shrinkage of irradiated SiC layer and the anisotropy of newly born crystals during annealing process produced internal stress and then induced not only a large number of dislocation walls in the non-irradiated layer but also the initiation and propagation of the cracks. The direction of dislocation walls was perpendicular to the growth direction of the columnar crystal. The longer the annealing time was, the larger the length and width of the formed crack would be. A quantitative model of the crack growth was provided to calculate the length and width of the cracks at a given annealing time.

  7. Surface hardening of 30CrMnSiA steel using continuous electron beam

    Science.gov (United States)

    Fu, Yulei; Hu, Jing; Shen, Xianfeng; Wang, Yingying; Zhao, Wansheng

    2017-11-01

    30CrMnSiA high strength low alloy (HSLA) carbon structural steel is typically applied in equipment manufacturing and aerospace industries. In this work, the effects of continuous electron beam treatment on the surface hardening and microstructure modifications of 30CrMnSiA are investigated experimentally via a multi-purpose electron beam machine Pro-beam system. Micro hardness value in the electron beam treated area shows a double to triple increase, from 208 HV0.2 on the base metal to 520 HV0.2 on the irradiated area, while the surface roughness is relatively unchanged. Surface hardening parameters and mechanisms are clarified by investigation of the microstructural modification and the phase transformation both pre and post irradiation. The base metal is composed of ferrite and troostite. After continuous electron beam irradiation, the micro structure of the electron beam hardened area is composed of acicular lower bainite, feathered upper bainite and part of lath martensite. The optimal input energy density for 30CrMnSiA steel in this study is of 2.5 kJ/cm2 to attain the proper hardened depth and peak hardness without the surface quality deterioration. When the input irradiation energy exceeds 2.5 kJ/cm2 the convective mixing of the melted zone will become dominant. In the area with convective mixing, the cooling rate is relatively lower, thus the micro hardness is lower. The surface quality will deteriorate. Chemical composition and surface roughness pre and post electron beam treatment are also compared. The technology discussed give a picture of the potential of electron beam surface treatment for improving service life and reliability of the 30CrMnSiA steel.

  8. Scanning tunneling microscopy of initial nitridation processes on oxidized Si(100) surface with radical nitrogen

    CERN Document Server

    Takahashi, R; Ikeda, H; Sakashita, M; Sakai, A; Yasuda, Y; Nakatsuka, O; Zaima, S

    2003-01-01

    We have investigated the initial nitridation processes on oxidized Si(100) with radical nitrogen at a substrate temperature of 850degC using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). It is found that the thin oxide layer suppresses the changes of original Si step structures during nitridation, and this effect critically depends on the growth conditions of the oxide layer. Comparison of the nitride island morphology to the case of the clean surface suggests that the migration of the precursor during nitridation is suppressed by the oxygen in the layer. (author)

  9. Adsorption and dissociation of oxygen molecules on Si(111)-(7×7) surface

    International Nuclear Information System (INIS)

    Niu, Chun-Yao; Wang, Jian-Tao

    2013-01-01

    The adsorption and dissociation of O 2 molecules on Si(111)-(7×7) surface have been studied by first-principles calculations. Our results show that all the O 2 molecular species adsorbed on Si(111)-(7×7) surface are unstable and dissociate into atomic species with a small energy barrier about 0.1 eV. The single O 2 molecule adsorption tends to form an ins×2 or a new metastable ins×2* structure on the Si adatom sites and the further coming O 2 molecules adsorb on those structures to produce an ad-ins×3 structure. The ad-ins×3 structure is indeed highly stable and kinetically limited for diving into the subsurface layer to form the ins×3-tri structure by a large barrier of 1.3 eV. Unlike the previous views, we find that all the ad-ins, ins×2, and ad-ins×3 structures show bright images, while the ins×2*, ins×3, and ins×3-tri structures show dark images. The proposed oxidation pathways and simulated scanning tunneling microscope images account well for the experimental results and resolve the long-standing confusion and issue about the adsorption and reaction of O 2 molecules on Si(111) surface

  10. SiO mass spectrometry and Si-2p photoemission spectroscopy for the study of oxidation reaction dynamics of Si(001) surface by supersonic O sub 2 molecular beams under 1000K

    CERN Document Server

    Teraoka, Y; Moritani, K

    2003-01-01

    The Si sup 1 sup 8 O desorption yield was measured in the Si(001) surface temperature region from 900K to 1300K at the sup 1 sup 8 O sub 2 incident energies of 0.7eV, 2.2eV and 3.3eV. The Si sup 1 sup 8 O desorption yield in a surface temperature region higher than 1000K increased with increasing incident energy, indicating the incident-energy-induced oxidation and the variation of angular distribution of Si sup 1 sup 8 O desorption. Inversely, the Si sup 1 sup 8 O desorption yield decreased with increasing incident energy in the region from 900K to 1000K, indicating the coexistence of the passive and the active oxidation. In order to clarify the reaction mechanisms of the later phenomenon, real-time in-situ Si-2p photoemission spectroscopy has been performed. The obtained Si-2p spectra showed the variation of the oxide-nuclei quality from the sub-oxide-rich structure to the SiO sub 2 -rich structure. The formation of the SiO sub 2 structure suppresses the SiO desorption due to the enhanced O sub 2 sticking a...

  11. Formation and coarsening of near-surface Ga nanoparticles on SiN{sub x}

    Energy Technology Data Exchange (ETDEWEB)

    Canniff, J. C.; Jeon, S.; Huang, S.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2015-06-15

    We have investigated the formation and coarsening of near-surface Ga nanoparticles (NPs) in SiN{sub x} using Ga{sup +} focused-ion-beam-irradiation of SiN{sub x}, followed by rapid thermal annealing. For surfaces with minimal curvature, diffusive growth is apparent, leading to nearly close packed arrays with NP diameters as small as 3 nm and densities as high as ∼4 × 10{sup 12} cm{sup −2}. The diffusive flux increases with annealing temperature, leading to NP coarsening by Ostwald ripening. For surfaces with increased curvature, diffusion towards the valleys also increases during annealing, leading to Ga NP coalescence and a bi-modal distribution of NP sizes.

  12. Influence of the growth-surface on the incorporation of phosphorus in SiC

    International Nuclear Information System (INIS)

    Rauls, E.; Gerstmann, U.; Frauenheim, Th.

    2005-01-01

    Phosphorus is a common and desired n-type dopant of SiC, but it turned out that doping by diffusion or during growth is rarely successful. To avoid the efforts and the creation of damage if ion implantation is used instead, these techniques were, though, highly desirable. In this work, we have investigated theoretically the experimental observation that phosphorus obviously hardly diffuses into the material. Not the diffusivity of the dopant but its addiction to occupy a three-fold coordinated surface site are critical, together with the way the surface affects the bulk migration barriers of the dopants. Whereas the most common growth direction for 4H-SiC, the polar silicon terminated (0001) surface, seems to be least appropriate for the incorporation of phosphorus atoms, growth along the nonpolar [112-bar 0] provides a good possibility to achieve efficient P-doping during growth

  13. Thermal and UV Hydrosilylation of Alcohol-Based Bifunctional Alkynes on Si (111) surfaces: How surface radicals influence surface bond formation

    OpenAIRE

    Khung, Y. L.; Ngalim, S. H.; Scaccabarozi, A.; Narducci, D.

    2015-01-01

    Using two different hydrosilylation methods, low temperature thermal and UV initiation, silicon (111) hydrogenated surfaces were functionalized in presence of an OH-terminated alkyne, a CF3-terminated alkyne and a mixed equimolar ratio of the two alkynes. XPS studies revealed that in the absence of premeditated surface radical through low temperature hydrosilylation, the surface grafting proceeded to form a Si-O-C linkage via nucleophilic reaction through the OH group of the alkyne. This led ...

  14. Investigation of hafnium silicide nanostructures on a Si(100) surface by means of photoelectron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Fluechter, C.R.; Weier, D. [Experimentelle Physik 1 - Universitaet Dortmund, (Germany); DELTA - Universitaet Dortmund, Maria-Goeppert-Mayer-Str. 2, D 44227 (Germany); Siervo, A. de; Landers, R. [Laboratorio Nacional de Luz Sincrotron, C.P. 6192, (Brazil); Schuermann, M.; Beimborn, A.; Schoenbohm, F.; Dreiner, S.; Westphal, C. [Experimentelle Physik 1 - Universitaet Dortmund, (Germany); Carazzolle, M.F.; Kleiman, G.G. [Inst. de Fisica - Universidade Estadual de Campinas, (Brazil)

    2007-07-01

    Ultrathin films of hafnium were deposited on a silicon sample and annealed at 750 C forming rectangular shaped hafnium silicide islands on the surface. This silicidation process causes the thermal instability of HfO{sub 2} films on silicon substrates. The latter system is under investigation in the field of high-k dielectrics to replace the system SiO{sub 2}/Si(100) in MOSFET devices. We investigated the structure of the HfSi{sub 2} island for different initial film thicknesses of hafnium by means of atomic force microscopy, photoelectron spectroscopy and photoelectron diffraction. Synchrotron light in the soft X-ray regime (h{nu}=180 eV) was used for excitation. The resulting diffraction patterns were compared to calculated patterns of model structures by an R-factor analysis. As a result, we propose a modified zirconium silicide model to describe the structure of the system.

  15. Competing interactions of noble metals and fullerenes with the Si(111)7x7 surface

    International Nuclear Information System (INIS)

    O'Shea, J.N.; Phillips, M.A.; Taylor, M.D.R.; Beton, P.H.; Moriarty, P.; Kanai, M.; Dennis, T.S.J.; Dhanak, V.R.

    2004-01-01

    Full text: Synchrotron-based photoelectron spectroscopy (PES) has been used to investigate the interaction of atomic gold and silver with a covalently bound C 60 -monolayer adsorbed on Si(111)7x7. In contrast to the relatively benign interaction of silver with the C 60 /Si(111)7x7 surface, core-level photoemission data reveal a strong interaction of the gold with the underlying silicon despite the presence of a chemisorbed fullerene monolayer. The Si 2p PES data exhibit dramatic changes consistent with the formation of a gold silicide, which is also evident from the corresponding Au 4f spectra. Valence band photoemission also reveals the absence of appreciable density of states at the Fermi level following the adsorption of either metal, indicating a negligible transfer of electrons from the adsorbed metal to the C 60 cage

  16. Fabrication and surface passivation of porous 6H-SiC by atomic layer deposited films

    DEFF Research Database (Denmark)

    Lu, Weifang; Ou, Yiyu; Petersen, Paul Michael

    2016-01-01

    Porous 6H-SiC samples with different thicknesses were fabricated through anodic etching in diluted hydrofluoric acid. Scanning electron microscope images show that the dendritic pore formation in 6HSiC is anisotropic, which has different lateral and vertical formation rates. Strong photoluminesce......Porous 6H-SiC samples with different thicknesses were fabricated through anodic etching in diluted hydrofluoric acid. Scanning electron microscope images show that the dendritic pore formation in 6HSiC is anisotropic, which has different lateral and vertical formation rates. Strong...... above the 6H-SiC crystal band gap, which suggests that the strong photoluminescence is ascribed to surface state produced during the anodic etching....

  17. Continuously tunable monomode mid-infrared vertical external cavity surface emitting laser on Si

    Science.gov (United States)

    Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Hobrecker, F.; Zogg, H.

    2010-10-01

    A tunable PbTe based mid-infrared vertical external cavity surface emitting laser is described. The active part is a ˜1 μm thick PbTe layer grown epitaxially on a Bragg mirror on the Si-substrate. The cavity is terminated with a curved Si/SiO Bragg top mirror and pumped optically with a 1.55 μm laser. Cavity length is <100 μm in order that only one longitudinal mode is supported. By changing the cavity length, up to 5% wavelength continuous and mode-hop free tuning is achieved at fixed temperature. The total tuning extends from 5.6 to 4.7 μm at 100-170 K operation temperature.

  18. Decalin-assisted light emitting porous Si formation and its optical, surface and morphological properties

    Science.gov (United States)

    Karatutlu, Ali; Istengir, Sumeyra; Cosgun, Sedat; Seker, Isa; Unal, Bayram

    2017-11-01

    In this research paper, light emitting porous silicon (Lep-Si) samples were fabricated by a surfactant-mediated chemical stain etching solution in order to form homogenous luminescent nanostructures at room temperature. As an industrially important solvent, decalin (decahydronaphtalene) was used as a surfactant in the HF/HNO3 solutions in order to control the etching process. Morphological, surface and optical properties of the Lep-Si samples were examined using atomic force microscopy, X-ray photoelectron spectroscopy, photoluminescence (PL) spectroscopy, and laser scanning confocal microscopy (LSCM) techniques. These characterization techniques were correlated with the various etching times including depth dependent luminescence profiles for the first time. We report the optimum conditions for production of the most efficient Lep-Si using decalin (decahydronaphtalene) and possible structural origins of light emission using the depth dependent luminescence measurements.

  19. Infrared studies of gold nanochains on the Si(557) stepped surface

    Energy Technology Data Exchange (ETDEWEB)

    Vu Hoang, Chung; Klevenz, Markus; Lovrincic, Robert; Skibbe, Olaf; Neubrech, Frank; Pucci, Annemarie [Kirchhoff-Institut fuer Physik der Universitaet Heidelberg (Germany)

    2008-07-01

    Gold nanochains on Si(557) will be fabricated under ultra high vacuum conditions. The terraces of the stepped surface serve as one-dimensional diffusion channels, which leads to the formation of parallel monoatomic chains. Due to the appearance of metallic chains an anisotropic change of the conductivity of the substrate surface can be expected. The chain growth process and conductivity dependence versus gold composition will be investigated in-situ by using transmittance infrared spectroscopy (IRS) with light polarized parallel and perpendicular to the chains, respectively. IRS is a well-established method to observe conductivity changes on surfaces. The temperature dependent behaviour of gold chains will be studied as well.

  20. Heavy ion induced disorder introduction in the surface and at shallow depths in Si

    International Nuclear Information System (INIS)

    Roosendaal, H.E.; Weick, M.; Hubbes, H.H.; Lutz, H.O.

    1979-01-01

    Disorder in a Si lattice has been produced by bombardment with 220 and 290 keV C + , N + , Ne + and Ar + ions. The production of surface disorder is compared with the disorder production at shallow depths. For random incidence of the damaging projectiles, the surface disorder has been found to scale with the disorder at shallow depths (380 to 800 A). For channeling incidence, a Z 1 dependent reduction of the surface disorder is observed. This reduction is much smaller than that for the disorder in the depth interval 380 to 800 A. (author)

  1. Disentangling surface, bulk, and space-charge-layer conductivity in Si(111)-(7x7)

    DEFF Research Database (Denmark)

    Wells, J.W.; Kallehauge, J.F.; Hansen, Torben Mikael

    2006-01-01

    A novel approach for extracting genuine surface conductivities is presented and illustrated using the unresolved example of Si(111)-(7x7). Its temperature-dependent conductivity was measured with a microscopic four point probe between room temperature and 100 K. At room temperature the measured......), irrespective of bulk doping. This abrupt transition is interpreted as the switching from bulk to surface conduction, an interpretation which is supported by a numerical model for the measured four point probe conductance. The value of the surface conductance is considerably lower than that of a good metal....

  2. Composition and structure of Si-doped NiTi with a complex surface profile

    Science.gov (United States)

    Slabodchikov, Vladimir A.; Ovchinnikov, Stanislav V.; Kuznetsov, Vladimir M.

    2017-12-01

    The paper presents Auger spectroscopy and electron microscopy data on the elemental composition and structure of NiTi specimens with blind holes doped with Si through plasma immersion ion implantation. The data demonstrate how silicon is distributed through the depth of NiTi from its front surface and along the side of its hole. The upper layer formed upon treatment is shown to be amorphous, and its thickness measuring several tens of nanometers is about two times larger on the side surface of the hole than on the front surface.

  3. Particulate silica and Si recycling in the surface waters of the Eastern Equatorial Pacific

    DEFF Research Database (Denmark)

    Adjou, Mohamed; Tréguer, Paul; Dumousseaud, Cynthia

    2011-01-01

    The distributions of biogenic and lithogenic silica concentrations and net silica production rates in the upper 120 m of the Eastern Equatorial Pacific (EEP) were examined in December 2004, on two transects situated at 110°W (4°N to 3°S) and along the equator (110°W to 140°W). Lithogenic silica (l......-rich waters the biogenic silica (bSiO2) concentrations were generally low, falling between 100 and 180 nmol Si l-1 in the upper 50 m and decreasing to less than 50 nmol Si l-1 below ~90 m. Estimates of net bSiO2 production rates revealed that the rate of production exceeded that of dissolution in the upper...... euphotic layer (0-40 m) along 110°W with net production extending somewhat deeper (60-100 m) to the west along the equator. Net production rates in the surface layer were low, ranging between 5 and 40 nmol Si l-1 d-1, consistent with previous observations that diatoms are small contributors to autotrophic...

  4. Optical Properties of DLC:SiOx and Ag Multilayer Films: Surface Plasmon Resonance Effect

    Directory of Open Access Journals (Sweden)

    Arvydas ČIEGIS

    2016-11-01

    Full Text Available Diamond like carbon films containing silicon (DLC:SiOx and „conventional“ hydrogenated diamond like carbon (DLC films were deposited by direct ion beam using anode layer ion source. Ag films were grown by unbalanced direct current magnetron sputtering. Structure of DLC:SiOx films was investigated by Raman scattering spectroscopy. In the case of DLC:SiOx film deposited on Ag layer surface enhanced Raman scattering effect was observed. Optical properties of the different diamond like carbon and silver multilayers were studied. Annealing effects were investigated. Influence of the thickness of the diamond like carbon and Ag layers was investigated. Position of the plasmonic absorbance peak maximum of DLC:SiOx and multilayers in all cases was redshifted in comparison with “conventional” diamond like nanocomposite films containing silver nanoclusters. It was explained by increase of the Ag nanoparticle size and/or increased probability of the oxidation of the embedded Ag due to the higher amount of oxygen in DLC:SiOx film in comparison with “conventional” diamond like carbon film.DOI: http://dx.doi.org/10.5755/j01.ms.22.4.13194

  5. Mono-Fluorinated Alkyne-Derived SAMs on Oxide-Free Si(III) Surfaces: Preparation, Characterization and Tuning of the Si Workfunction

    NARCIS (Netherlands)

    Pujari, S.P.; Andel, van E.; Yaffe, O.; Cahen, D.; Weidner, T.; Rijn, van C.J.M.; Zuilhof, H.

    2013-01-01

    Organic monolayers derived from ¿-fluoro-1-alkynes of varying carbon chain lengths (C(10)-C(18)) were prepared on Si(111) surfaces, resulting in changes of the physical and electronic properties of the surface. Analysis of the monolayers using XPS, Infrared Reflection Absorption Spectroscopy,

  6. Interface States Densities Effect at SiO2/ Polysilicon and SiO2/ Monosilicon Surfaces on N-polysilicon /Oxide/ P-Monosilicon Capacitance

    Directory of Open Access Journals (Sweden)

    H. Dib

    2014-05-01

    Full Text Available the interface states have a very significant role in the components containing MOS structures. In this paper we study the interface states densities effect at SiO2/ N-polysilicon and SiO2/ P- monosilicon surfaces on metal/polysilicon /oxide/ monosilicon capacitance. The numerical solution of poisson's equation and the determination of the charge variation in the structure induced by application of external bias (Vg allow simulating the capacitance-voltage MSPOS characteristics. The results show that the interface states at SiO2/ polysilicon and SiO2/ monosilicon surfaces translate the CT (V curve about positive voltage and cause the increase of the minimum value of capacitance. The effect of interface states on C (V curves is neglected for the polysilicon doping concentration in order to 1019 cm-3. For this doping level, the C (V curves are identical to the C (V of the monocristalline MOS structure.

  7. High resolution electron energy loss spectroscopy of clean and hydrogen covered Si(001) surfaces: first principles calculations.

    Science.gov (United States)

    Patterson, C H

    2012-09-07

    Surface phonons, conductivities, and loss functions are calculated for reconstructed (2×1), p(2×2) and c(4×2) clean Si(001) surfaces, and (2×1) H and D covered Si(001) surfaces. Surface conductivities perpendicular to the surface are significantly smaller than conductivities parallel to the surface. The surface loss function is compared to high resolution electron energy loss measurements. There is good agreement between calculated loss functions and experiment for H and D covered surfaces. However, agreement between experimental data from different groups and between theory and experiment is poor for clean Si(001) surfaces. Formalisms for calculating electron energy loss spectra are reviewed and the mechanism of electron energy losses to surface vibrations is discussed.

  8. Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide

    International Nuclear Information System (INIS)

    Liao, Baochen; Hoex, Bram; Aberle, Armin G.; Bhatia, Charanjit S.; Chi, Dongzhi

    2014-01-01

    In this work, we demonstrate that thermal atomic layer deposited (ALD) titanium oxide (TiO x ) films are able to provide a—up to now unprecedented—level of surface passivation on undiffused low-resistivity crystalline silicon (c-Si). The surface passivation provided by the ALD TiO x films is activated by a post-deposition anneal and subsequent light soaking treatment. Ultralow effective surface recombination velocities down to 2.8 cm/s and 8.3 cm/s, respectively, are achieved on n-type and p-type float-zone c-Si wafers. Detailed analysis confirms that the TiO x films are nearly stoichiometric, have no significant level of contaminants, and are of amorphous nature. The passivation is found to be stable after storage in the dark for eight months. These results demonstrate that TiO x films are also capable of providing excellent passivation of undiffused c-Si surfaces on a comparable level to thermal silicon oxide, silicon nitride, and aluminum oxide. In addition, it is well known that TiO x has an optimal refractive index of 2.4 in the visible range for glass encapsulated solar cells, as well as a low extinction coefficient. Thus, the results presented in this work could facilitate the re-emergence of TiO x in the field of high-efficiency silicon wafer solar cells.

  9. Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide

    Science.gov (United States)

    Liao, Baochen; Hoex, Bram; Aberle, Armin G.; Chi, Dongzhi; Bhatia, Charanjit S.

    2014-06-01

    In this work, we demonstrate that thermal atomic layer deposited (ALD) titanium oxide (TiOx) films are able to provide a—up to now unprecedented—level of surface passivation on undiffused low-resistivity crystalline silicon (c-Si). The surface passivation provided by the ALD TiOx films is activated by a post-deposition anneal and subsequent light soaking treatment. Ultralow effective surface recombination velocities down to 2.8 cm/s and 8.3 cm/s, respectively, are achieved on n-type and p-type float-zone c-Si wafers. Detailed analysis confirms that the TiOx films are nearly stoichiometric, have no significant level of contaminants, and are of amorphous nature. The passivation is found to be stable after storage in the dark for eight months. These results demonstrate that TiOx films are also capable of providing excellent passivation of undiffused c-Si surfaces on a comparable level to thermal silicon oxide, silicon nitride, and aluminum oxide. In addition, it is well known that TiOx has an optimal refractive index of 2.4 in the visible range for glass encapsulated solar cells, as well as a low extinction coefficient. Thus, the results presented in this work could facilitate the re-emergence of TiOx in the field of high-efficiency silicon wafer solar cells.

  10. Fabrication and Surface Properties of Composite Films of SAM/Pt/ZnO/SiO 2

    KAUST Repository

    Yao, Ke Xin

    2008-12-16

    Through synthetic architecture and functionalization with self-assembled monolayers (SAMs), complex nanocomposite films of SAM/Pt/ZnO/SiO2 have been facilely prepared in this work. The nanostructured films are highly uniform and porous, showing a wide range of tunable wettabilities from superhydrophilicity to superhydrophobicity (water contact angles: 0° to 170°). Our approach offers synthetic flexibility in controlling film architecture, surface topography, coating texture, crystallite size, and chemical composition of modifiers (e.g., SAMs derived from alkanethiols). For example, wettability properties of the nanocomposite films can be finely tuned with both inorganic phase (i.e., ZnO/SiO2 and Pt/ZnO/SiO2) and organic phase (i.e., SAMs on Pt/ZnO/SiO2). Due to the presence of catalytic components Pt/ZnO within the nanocomposites, surface reactions of the organic modifiers can further take place at room temperature and elevated temperatures, which provides a means for SAM formation and elimination. Because the Pt/ZnO forms an excellent pair of metal-semiconductors for photocatalysis, the anchored SAMs can also be modified or depleted by UV irradiation (i.e., the films possess self-cleaning ability). Potential applications of these nanocomposite films have been addressed. Our durability tests also confirm that the films are thermally stable and structurally robust in modification- regeneration cycles. © 2008 American Chemical Society.

  11. Facile and efficient synthesis of the surface tantalum hydride (≡SiO)2TaIIIH and tris-siloxy tantalum (≡SiO)3TaIII starting from novel tantalum surface species (≡SiO)TaMe4 and (≡SiO)2TaMe 3

    KAUST Repository

    Chen, Yin

    2014-03-10

    By grafting of TaMe5 (1) on the surface of silica partially dehydroxylated at 500 C (silica500), a mixture of (≡SiO)TaMe4 (2a; major, 65 ± 5%) and (≡SiO) 2TaMe3 (2b; minor, 35 ± 5%) was produced, which has been characterized by microanalysis, IR, and SS NMR (1H, 13C, 1H-13C HETCOR, proton double and triple quantum). After grafting, these surface organometallic compounds are more stable than the precursor TaMe5. Treatment of 2a,b with water and H 2 resulted in the formation of methane in amount of 3.6 ± 0.2 and 3.4 ± 0.2 mol/grafted Ta, respectively. 2a,b react with H2 (800 mbar) to form (≡SiO)2TaH. After (≡SiO) 2TaH was heated to 500 C under hydrogen or vacuum, [(≡SiO) 3Ta][≡SiH] was produced, and the structure was confirmed by IR, NMR, and EXAFS. Considering the difficulty of the previous preparation method, these syntheses represent a facile and convenient way to prepare tantalum surface species (≡SiO)2TaH and (≡SiO)3Ta via the intermediate of the new surface organometallic precursors: (≡SiO)TaMe4/(≡SiO)2TaMe3. (≡SiO)2TaH and (≡SiO)3Ta exhibit equal reactivities in alkane metathesis and ethylene polymerization in comparison to those in previous reports. © 2014 American Chemical Society.

  12. Surface modification and its role in the preparation of FeSi gradient alloys with good magnetic property and ductility

    Science.gov (United States)

    Yu, Haiyuan; Bi, Xiaofang

    2018-04-01

    Realization of the effective Si penetration at a lower processing temperature is a challenge, but of significance in reducing the strict requirements for the equipment and realizing cost-cutting in production. In this work, we have modified the surface microstructure of Fe-3 wt%Si alloy by using surface mechanical attrition treatment. The modified surface microstructure is characteristic of nanocrystalline, which is found to significantly enhance the efficiency of subsequent Si penetration into the alloy, and successively leading to the decrease of penetration temperature up to 200 °C. As a consequence, the Si gradient distribution across thickness can be readily controlled by changing penetration time, and FeSi alloys with various gradients are prepared by chemical vapor deposition along with subsequent annealing process. The dependence of magnetic and mechanical properties on Si gradient for demonstrates that the increase of Si gradient reduces core losses, especially at higher frequencies, and meanwhile improves ductility of FeSi alloys as well. The mechanism underlying the effect of Si gradient is clarified by combining magnetostriction measurement and domain structure observations. This work provides a facile and effective way for achieving gradient FeSi alloys with good magnetic property and ductility.

  13. Preparation of thin Si:H films in an inductively coupled plasma reactor and analysis of their surface roughness

    International Nuclear Information System (INIS)

    Zhao Wenfeng; Chen Junfang; Meng Ran; Wang Yang; Wang Hui; Guo Chaofeng; Xue Yongqi

    2010-01-01

    An important concern in the deposition of Si:H films is to obtain smooth surfaces. Herein, we deposit the thin Si:H films using Ar-diluted SiH 4 as feedstock gas in an inductively coupled plasma reactor. And we carry a real-time monitor on the deposition process by using optical emission spectrum technology in the vicinity of substrate and diagnose the Ar plasma radial distribution by Langmuir probe. Surface detecting by AFM and surface profilometry in large scale shows that the thin Si:H films have small surface roughness. Distributions of both the ion density and the electron temperature are homogeneous at h = 0.5 cm. Based on these experimental results, it can be proposed inductively coupled plasma reactor is fit to deposit the thin film in large scale. Also, Ar can affect the reaction process and improve the thin Si:H films characteristics.

  14. Magnetic-field-dependent morphology of self-organized Fe on stepped Si(111) surfaces

    International Nuclear Information System (INIS)

    Cougo dos Santos, M.; Geshev, J.; Pereira, L. G.; Schmidt, J. E.

    2009-01-01

    The present work reports on Fe thin films grown on vicinal Si(111) substrates via rf magnetron sputtering. The dependencies of the growth mode and magnetic properties of the obtained iron nanostructures on both crystallographic surface orientation and on the direction of the very weak stray magnetic field from the magnetron gun were studied. Scanning tunneling microscopy images showed strong dependence of the Fe grains' orientation on the stray field direction in relation to the substrate's steps demonstrating that, under appropriately directed magnetic field, Si surfaces can be used as templates for well-defined self-assembled iron nanostructures. Magneto-optical Kerr effect hysteresis loops showed an easy-axis coercivity almost one order of magnitude smaller for the film deposited with stray field applied along the steps, accompanied with a change in the magnetization reversal mode. Phenomenological models involving coherent rotation and/or domain-wall unpinning were used for the interpretation of these results.

  15. Electronic transport through Si nanowires: Role of bulk and surface disorder

    DEFF Research Database (Denmark)

    Markussen, Troels; Rurali, R.; Brandbyge, Mads

    2006-01-01

    on the situation a preferable method can be identified. Several numerical results are presented to illustrate the relative merits of the two methods. Our calculations of relaxed atomic structures and their conductance properties are based on density functional theory without introducing adjustable parameters. Two...... specific models of disorder are considered: Unpassivated, surface reconstructed SiNW's are perturbed by random on-site (Anderson) disorder whereas defects in hydrogen passivated wires are introduced by randomly removed H atoms. The unpassivated wires are very sensitive to disorder in the surface whereas...... bulk disorder has almost no influence. For the passivated wires, the scattering by the hydrogen vacancies is strongly energy dependent and for relatively long SiNW's (L > 200 nm) the resistance changes from the Ohmic to the localization regime within a 0.1-eV shift of the Fermi energy. This high...

  16. Model, First-Principle Calculation of Ammonia Dissociation on Si(100 Surface. Importance of Proton Tunneling

    Directory of Open Access Journals (Sweden)

    Marek Z. Zgierski

    2003-06-01

    Full Text Available Abstract: The dissociation of an ammonia molecule on a cluster of Si atoms simulating the 100 silicon crystal structure with two Si dimers has been investigated by means of the DFT and an approximate instanton methods. The model corresponds to the low coverage limit of the surface. Absolute rate constants of two different dissociation paths are evaluated together with deuterium isotope effects. It is demonstrated that, even at room temperatures, the process is dominated by tunneling and that dissociation to a silicon atom of the adjacent dimer, rather than a silicon within the same dimer, is the prevailing mechanism. This leads to creation of a metastable structure which will slowly decay through a two-step hydrogen atom migration towards the absolute minimum on the potential energy surface corresponding to the NH2 group and the hydrogen atom residing in the same dimer.

  17. Si+ ion implantation reduces the bacterial accumulation on the Ti6Al4V surface

    International Nuclear Information System (INIS)

    Gallardo-Moreno, A M; Pacha-Olivenza, M A; Perera-Nunez, J; Gonzalez-Carrasco, J L; Gonzalez-Martin, M L

    2010-01-01

    Ti6Al4V is one of the most commonly used biomaterials in orthopedic applications due to its interesting mechanical properties and reasonable biocompatibility. Nevertheless, after the implantation, microbial adhesion to its surface can provoke severe health problems associated to the development of biofilms and subsequent infectious processes. This work shows a modification of the Ti6Al4V surface by Si+ ion implantation which reduces the bacterial accumulation under shear forces. Results have shown that the number of bacteria remaining on the surface at the end of the adhesion experiments decreased for silicon-treated surface. In general, the new surface also behaved as less adhesive under in vitro flow conditions. Since no changes are observed in the electrical characteristics between the control and implanted samples, differences are likely related to small changes observed in hydrophobicity.

  18. Surface Property and Stability of Transparent Superhydrophobic Coating Based on SiO2-Polyelectrolyte Multilayer

    Directory of Open Access Journals (Sweden)

    Sunisa JINDASUWAN

    2016-05-01

    Full Text Available Artificial superhydrophobic films were deposited onto a glass slide by performing layer-by-layer deposition of 3.5 bilayers of poly(allylamine hydrochloride/ poly(acrylic acid polyelectrolyte, followed by a layer of SiO2 nanoparticles of various amounts to enhance the surface roughness and a fluorosilane to reduce the surface free energy. Higher SiO2 content incorporated into the films resulted in rougher surface and higher water contact angle. The total surface free energy determined by using the Owens-Wendt equation dramatically decreased from 31.46 mJ·m-2 for the film having the relatively flat surface to only 1.16 mJ·m-2 for the film having the highest surface roughness of 60.2 ± 1.1 nm. All the films were optically transparent and had excellent adhesion based on the peel test. Indoor and accelerated weathering tests revealed good weathering stability.DOI: http://dx.doi.org/10.5755/j01.ms.22.2.12952

  19. Benchmarking surface signals when growing GaP on Si in CVD ambients

    Energy Technology Data Exchange (ETDEWEB)

    Doescher, Henning

    2010-10-26

    The present work investigates the formation of GaP films prepared on Si(100) surfaces and their anti-phase disorder in metalorganic vapor phase epitaxy (MOVPE) ambients. GaP films grown on Si(100) substrates served as a lattice matched model system for the crucial III-V/Si(100) interface to form silicon-based quasi substrates. A variety of surface-sensitive methods was required to establish suitable silicon substrate preparation and subsequent GaP growth free of anti-phase domains (APDs) by analyzing the substrate surface, the interface and the epitaxial films resulting from the heteroepitaxial nucleation process. Thorough investigations in the MOVPE ambients and an appropriate improvement of the equipment and of the VPE preparation process of the substrates led to clean Si(100) surfaces free of oxygen and other contaminants, as was evidenced by Xray photoelectron spectroscopy. Predominantly double-layer stepped Si(100) surfaces, as a prerequisite for subsequent III-V integration, were obtained for 0.1 , 2 and 6 misorientation in [011] direction. In contrast to standard preparation in ultra-high vacuum (UHV), the double-layer steps on 0.1 and 2 samples featured dimers oriented perpendicular to the step edges, contradicting well-established results with and without hydrogen coverage obtained in UHV. This striking difference was attributed to the presence of hydrogen as a process gas in the MOVPE environment leading to a silicon surface covered by monohydrides after substrate preparation, as was determined by Fourier-transform infrared spectroscopy (FTIR), while reflectance anisotropy spectroscopy (RAS) showed the absence of hydrogen termination at higher temperatures. On these substrates, optical in situ spectroscopy was established as a method for the quantitative evaluation of the APD content in GaP heteroepitaxy. The analysis required a detailed understanding of the GaP(100) surface reconstructions, which have been described theoretically in the literature and

  20. Plasma-polymerized SiOx deposition on polymer film surfaces for preparation of oxygen gas barrier polymeric films

    International Nuclear Information System (INIS)

    Inagaki, N.

    2003-01-01

    SiOx films were deposited on surfaces of three polymeric films, PET, PP, and Nylon; and their oxygen gas barrier properties were evaluated. To mitigate discrepancies between the deposited SiOx and polymer film, surface modification of polymer films was done, and how the surface modification could contribute to was discussed from the viewpoint of apparent activation energy for the permeation process. The SiOx deposition on the polymer film surfaces led to a large decrease in the oxygen permeation rate. Modification of polymer film surfaces by mans of the TMOS or Si-COOH coupling treatment in prior to the SiOx deposition was effective in decreasing the oxygen permeation rate. The cavity model is proposed as an oxygen permeation process through the SiOx-deposited Nylon film. From the proposed model, controlling the interface between the deposited SiOx film and the polymer film is emphasized to be a key factor to prepare SiOx-deposited polymer films with good oxygen gas barrier properties. (author)

  1. Structural origin of Si-2p core-level shifts from Si(100)-c[4x2] surface: A spectral x-ray photoelectron diffraction study

    Energy Technology Data Exchange (ETDEWEB)

    Chen, X.; Tonner, B.P. [Univ. of Wisconsin, Milwaukee, WI (United States); Denlinger, J. [Univ. of Wisconsin, Milwaukee, WI (United States)][Ernest Orlando Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    The authors have performed angle-resolved x-ray photoelectron diffraction (XPD) from a Si(100)-c(4x2) surface to study the structural origin of Si-2p core-level shifts. In the experiment, the highly resolved surface Si-2p core-level spectra were measured as a fine grid of hemisphere and photon energies, using the SpectroMicroscopy Facility {open_quotes}ultraESCA{close_quotes} instrument. By carefully decomposing the spectra into several surface peaks, the authors are able to obtain surface-atom resolved XPD patterns. Using a multiple scattering analysis, they derived a detailed atomic model for the Si(100)-c(4x2) surface. In this model, the asymmetric dimers were found tilted by 11.5 plus/minus 2.0 degrees with bond length of 2.32 plus/minus 0.05{angstrom}. By matching model XPD patterns to experiment, the authors can identify which atoms in the reconstructed surface are responsible for specific photoemission lines in the 2p spectrum.

  2. Scanning tunneling microscopy of monoatomic gold chains on vicinal Si(335) surface: experimental and theoretical study

    Energy Technology Data Exchange (ETDEWEB)

    Krawiec, M.; Kwapinski, T.; Jalochowski, M. [Institute of Physics and Nanotechnology Center, M. Curie-Sklodowska University, pl. M. Curie-Sklodowskiej 1, 20-031 Lublin (Poland)

    2005-02-01

    We study electronic and topographic properties of the Si(335) surface, containing Au wires parallel to the steps. We use scanning tunneling microscopy (STM) supplemented by reflection of high energy electron diffraction (RHEED) technique. The STM data show the space and voltage dependent oscillations of the distance between STM tip and the surface which can be explained within one band tight binding Hubbard model. We calculate the STM current using nonequilibrium Keldysh Green function formalism. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Direct methods determination of the Si(111)-(6x6)Au surface structure

    DEFF Research Database (Denmark)

    Grozea, D.; Landree, E.; Marks, L.D.

    1998-01-01

    The atomic structure of the Au 6 x 6 on Si(111) phase has been determined using direct methods and surface X-ray diffraction data. This surface structure is very complicated, with 14 independent gold atoms, relaxations in 24 independent silicon sites and three partially occupied gold sites. In one...... the gold structures in the coverage range 0.8-1.5 monolayers as pseudo-glasses with strong short-range order but varying degrees of long-range order. (C) 1998 Elsevier Science B.V. All rights reserved....

  4. Alkane metathesis with the tantalum methylidene [(≡SiO)Ta(=CH2)Me2]/[(≡SiO)2Ta(=CH2)Me] generated from well-defined surface organometallic complex [(≡SiO)TaVMe4

    KAUST Repository

    Chen, Yin

    2015-01-21

    By grafting TaMe5 on Aerosil700, a stable, well-defined, silica-supported tetramethyl tantalum(V) complex, [(≡SiO)TaMe4], is obtained on the silica surface. After thermal treatment at 150 °C, the complex is transformed into two surface tantalum methylidenes, [(≡SiO)2Ta(=CH2)Me] and [(≡SiO)Ta(=CH2)Me2], which are active in alkane metathesis and comparable to the previously reported [(≡SiO)2TaHx]. Here we present the first experimental study to isolate and identify a surface tantalum carbene as the intermediate in alkane metathesis. A systematic experimental study reveals a new reasonable pathway for this reaction.

  5. A surface-mediated siRNA delivery system developed with chitosan/hyaluronic acid-siRNA multilayer films through layer-by-layer self-assembly

    Science.gov (United States)

    Wu, Lijuan; Wu, Changlin; Liu, Guangwan; Liao, Nannan; Zhao, Fang; Yang, Xuxia; Qu, Hongyuan; Peng, Bo; Chen, Li; Yang, Guang

    2016-12-01

    siRNA delivery remains highly challenging because of its hydrophilic and anionic nature and its sensitivity to nuclease degradation. Effective siRNA loading and improved transfection efficiency into cells represents a key problem. In our study, we prepared Chitosan/Hyaluronic acid-siRNA multilayer films through layer-by-layer self-assembly, in which siRNAs can be effectively loaded and protected. The construction process was characterized by FTIR, 13C NMR (CP/MAS), UV-vis spectroscopy, and atomic force microscopy (AFM). We presented the controlled-release performance of the films during incubation in 1 M NaCl solution for several days through UV-vis spectroscopy and polyacrylamide gel electrophoresis (PAGE). Additionally, we verified the stability and integrity of the siRNA loaded on multilayer films. Finally, the biological efficacy of the siRNA delivery system was evaluated via cells adhesion and gene silencing analyses in eGFP-HEK 293T cells. This new type of surface-mediated non-viral multilayer films may have considerable potential in the localized and controlled-release delivery of siRNA in mucosal tissues, and tissue engineering application.

  6. Bistable Si dopants in the GaAs (1 1 0) surface

    International Nuclear Information System (INIS)

    Smakman, E P; Koenraad, P M

    2015-01-01

    In this review, recent work is discussed on bistable Si dopants in the GaAs (1 1 0) surface, studied by scanning tunneling microscopy (STM). The bistability arises because the dopant atom can switch between a positive and a negative charge state, which are associated with two different lattice configurations. Manipulation of the Si atom charge configuration is achieved by tuning the local band bending with the STM tip. Furthermore, illuminating the sample with a laser also influences the charge state, allowing the operation of the dopant atom as an optical switch. The switching dynamics without illumination is investigated in detail as a function of temperature, lateral tip position, and applied tunneling conditions. A physical model is presented that independently describes the thermal and quantum tunneling contributions to the switching frequency and charge state occupation of a single Si atom. The basic functionality of a memory cell is demonstrated employing a single bistable Si dopant as the active element, using the STM tip as a gate to write and read the information. (topical review)

  7. Real-time observation of initial stages of thermal oxidation on Si(001) surface by using synchrotron radiation photoemission spectroscopy

    CERN Document Server

    Yoshigoe, A; Moritani, K

    2003-01-01

    Real-time observation of initial stages of thermal oxidation processes on the Si(001) surface using O sub 2 gas (1x10 sup - sup 4 Pa) was performed by means of the O-1s and Si-2p photoemission spectroscopy with synchrotron radiation. From the analysis of the time evolution of oxygen uptake curves on the basis of the reaction kinetics model, the oxide-layer growth depending on the surface temperature was categorized by the Langmuir adsorption and the auto-catalytic reaction models, respectively. It was found that the oxidation rates increased with increasing the surface temperature. The time evolution of Si oxidation states depending on the surface temperature was well monitored. We found that the surface temperature enhanced the diffusion and/or migration of adsorbed oxygen and the bulk Si atom. (author)

  8. Morphology and chemical termination of HF-etched Si{sub 3}N{sub 4} surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Li-Hong; Debenedetti, William J. I.; Peixoto, Tatiana; Gokalp, Sumeyra; Shafiq, Natis; Veyan, Jean-François; Chabal, Yves J., E-mail: chabal@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Michalak, David J.; Hourani, Rami [Components Research, Intel Corporation, Hillsboro, Oregon 97124 (United States)

    2014-12-29

    Several reports on the chemical termination of silicon nitride films after HF etching, an important process in the microelectronics industry, are inconsistent claiming N-H{sub x}, Si-H, or fluorine termination. An investigation combining infrared and x-ray photoelectron spectroscopies with atomic force and scanning electron microscopy imaging reveals that under some processing conditions, salt microcrystals are formed and stabilized on the surface, resulting from products of Si{sub 3}N{sub 4} etching. Rinsing in deionized water immediately after HF etching for at least 30 s avoids such deposition and yields a smooth surface without evidence of Si-H termination. Instead, fluorine and oxygen are found to terminate a sizeable fraction of the surface in the form of Si-F and possibly Si-OH bonds. The relatively unique fluorine termination is remarkably stable in both air and water and could lead to further chemical functionalization pathways.

  9. Simulation, microstructure and microhardness of the nano-SiC coating formed on Al surface via laser shock processing

    International Nuclear Information System (INIS)

    Cui, C.Y.; Cui, X.G.; Zhao, Q.; Ren, X.D.; Zhou, J.Z.; Liu, Z.; Wang, Y.M.

    2014-01-01

    Highlights: • Nano-SiC coating is successfully fabricated on pure Al surface via LSPC. • Movement states of the nano-SiC particles are analyzed by FEM. • Formation mechanism of the nano-SiC coating is put forward and discussed. • Microhardness of the Al is significantly improved due to the nano-SiC coating. - Abstract: A novel method, laser shock processing coating (LSPC), has been developed to fabricate a particle-reinforced coating based on laser shock processing (LSP). In this study, a nano-SiC coating is successfully prepared on pure Al surface via LSPC. The surface and cross section morphologies as well as the compositions of nano-SiC coating are investigated. Moreover, a finite element method (FEM) is employed to clarify the formation process of nano-SiC coating. On the basis of the above analyzed results, a possible formation mechanism of the nano-SiC coating is tentatively put forward and discussed. Furthermore, the nano-SiC coating shows superior microhardness over the Al substrate

  10. Dissociative scattering of low-energy SiF{sub 3}{sup +} and SiF{sup +} ions (5-200 eV) on Cu(100) surface

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, Hiroyuki; Baba, Yuji; Sasaki, T.A. [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    1997-03-01

    Dissociative scattering of molecular SiF{sub 3}{sup +} and SiF{sup +} ions from a Cu(100) single crystal surface has been investigated in the incident energy range from 5 eV to 200 eV with a scattering angle of 77deg. The scattered ion intensity of dissociative ions and parent molecular ions were measured as a function of incident ion energy. The observed data show that onset energies of dissociation for SiF{sub 3}{sup +} and SiF{sup +} ions are 30 eV and 40 eV, respectively. The obtained threshold energies are consistent with a impulsive collision model where the dissociation of incident ion is caused by vibrational excitation during collision. (author)

  11. Thermal and UV Hydrosilylation of Alcohol-Based Bifunctional Alkynes on Si (111) surfaces: How surface radicals influence surface bond formation

    Science.gov (United States)

    Khung, Y. L.; Ngalim, S. H.; Scaccabarozi, A.; Narducci, D.

    2015-06-01

    Using two different hydrosilylation methods, low temperature thermal and UV initiation, silicon (111) hydrogenated surfaces were functionalized in presence of an OH-terminated alkyne, a CF3-terminated alkyne and a mixed equimolar ratio of the two alkynes. XPS studies revealed that in the absence of premeditated surface radical through low temperature hydrosilylation, the surface grafting proceeded to form a Si-O-C linkage via nucleophilic reaction through the OH group of the alkyne. This led to a small increase in surface roughness as well as an increase in hydrophobicity and this effect was attributed to the surficial etching of silicon to form nanosize pores (~1-3 nm) by residual water/oxygen as a result of changes to surface polarity from the grafting. Furthermore in the radical-free thermal environment, a mix in equimolar of these two short alkynes can achieve a high contact angle of ~102°, comparable to long alkyl chains grafting reported in literature although surface roughness was relatively mild (rms = ~1 nm). On the other hand, UV initiation on silicon totally reversed the chemical linkages to predominantly Si-C without further compromising the surface roughness, highlighting the importance of surface radicals determining the reactivity of the silicon surface to the selected alkynes.

  12. Surface photovoltage investigation of gold chains on Si(111) by two-photon photoemission

    Energy Technology Data Exchange (ETDEWEB)

    Otto, Sebastian; Biedermann, Kerstin; Fauster, Thomas [Lehrstuhl fuer Festkoerperphysik, Universitaet Erlangen-Nuernberg, Staudtstr. 7, D-91058 Erlangen (Germany)

    2011-07-01

    We present surface photovoltage measurements on Si(111)-(7 x 7) with monoatomic gold chains. The gold coverage was varied between zero and 0.6 ML, where the Si(111)-(5 x 2)-Au reconstruction covers the surface completely. During the two-photon photoemission experiments the p- or n-doped samples were illuminated by infrared (IR, E{sub IR}=1.55 eV) and ultraviolet (UV, E{sub UV}=4.65 eV) laser pulses. For all coverages the photovoltage was determined for sample temperatures of 90 K and 300 K by variation of the IR and UV laser power. P-doped as well as n-doped Si(111) wafers show a linear dependence of the photovoltage on gold coverage. This stands in contrast to scanning tunneling spectroscopy measurements, which show a coverage-independent photovoltage over a wide coverage range for n-doped wafers. While for p-doped wafers our experimentally determined photovoltage is in agreement with previous reports, for n-doped wafers the observed values are lower than expected.

  13. Mössbauer spectroscopy study of surfactant sputtering induced Fe silicide formation on a Si surface

    Energy Technology Data Exchange (ETDEWEB)

    Beckmann, C.; Zhang, K. [2nd Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Hofsäss, H., E-mail: hans.hofsaess@phys.uni-goettingen.de [2nd Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Brüsewitz, C.; Vetter, U. [2nd Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Bharuth-Ram, K. [Physics Department, Durban University of Technology, Durban 4001 (South Africa)

    2015-12-01

    Highlights: • We study the formation of self-organized nanoscale dot and ripple patterns on Si. • Patterns are created by keV noble gas ion irradiation and simultaneous {sup 57}Fe co-deposition. • Ion-induced phase separation and the formation of a-FeSi{sub 2} is identified as relevant process. - Abstract: The formation of Fe silicides in surface ripple patterns, generated by erosion of a Si surface with keV Ar and Xe ions and simultaneous co-deposition of Fe, was investigated with conversion electron Mössbauer spectroscopy, atomic force microscopy and Rutherford backscattering spectrometry. For the dot and ripple patterns studied, we find an average Fe concentration in the irradiated layer between 6 and 25 at.%. The Mössbauer spectra clearly show evidence of the formation of Fe disilicides with Fe content close to 33 at.%, but very little evidence of the formation of metallic Fe particles. The results support the process of ion-induced phase separation toward an amorphous Fe disilicide phase as pattern generation mechanism. The observed amorphous phase is in agreement with thermodynamic calculations of amorphous Fe silicides.

  14. Computational study of the adsorption of methanol, formic acid, and formaldehyde on the β-SiC(100)-3x2 surface

    Science.gov (United States)

    Adhikari, Lekh; Casey, Sean

    2009-11-01

    The absorption of methanol, formic acid, and formaldehyde on the Si-rich β-SiC(100)-(3x2) surface has been studied using density functional theory (DFT) computational methods and small clusters to model the surface reactivity. A single cluster dimer model is used to calculate energies after the interaction of adsorbates on the surface. The dissociative adsorption of methanol on the SiC(100)-3x2 surface is predicted to take place facilely, giving rise to Si-OCH3 and Si-H surface species and followed a path similar to that predicted for Si(100)-2x1 surface. The reaction is highly exothermic and predicted to occur with essentially no barrier. Formaldehyde is also predicted to adsorb with essentially no barrier on the SiC(100)-3x2 surface with formation of a 4-member ring on the surface. This adsorption is also exothermic and similar to the corresponding Si(100)-2x1 surface. This result shows that the carbonyl group can undergo cycloaddition onto the SiC(100) surface. Formic acid is also predicted to undergo dissociative chemisorption on the SiC(100) surface with the formation of Si-OCOH and Si-H surface species. This process is also highly exothermic (-283.1 kJ/mol) and essentially barrierless.

  15. Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements

    Science.gov (United States)

    Angermann, Heike

    2014-09-01

    The field-modulated surface photovoltage (SPV) method, a very surface sensitive technique, was utilized to determine electronic interface properties on wet-chemically oxidized and etched silicon (Si) interfaces. The influence of preparation-induced surface micro-roughness and un-stoichiometric oxides on the resulting the surface charge, energetic distribution Dit(E), and density Dit,min of rechargeable states was studied by simultaneous, spectroscopic ellipsometry (SE) measurements on polished Si(111) and Si(100) substrates. Based on previous findings and new research, a study of conventional and newly developed wet-chemical oxidation methods was established, correlating the interactions between involved oxidizing and etching solutions and the initial substrate morphology to the final surface conditioning. It is shown, which sequences of wet-chemical oxidation and oxide removal, have to be combined in order to achieve atomically smooth, hydrogen terminated surfaces, as well as ultra-thin oxide layers with low densities of rechargeable states on flat, saw damage etched, and textured Si substrates, as commonly applied in silicon device and solar cell manufacturing. These conventional strategies for wet-chemical pre-treatment are mainly based on concentrated solutions. Therefore, special attention was put on the development of more environmentally acceptable processes, utilizing e.g. hot pure water with low contents of oxygen or hydrochloric acid, and of ozone, working at ambient temperatures. According to our results, these methods could be a high quality and low cost alternative to current approaches with liquid chemicals for the preparation of hydrophobic Si substrate surfaces and ultra-thin passivating oxide layers. As demonstrated for selected examples, the effect of optimized wet-chemical pre-treatments can be preserved during subsequent soft plasma enhanced chemical vapor depositions of Si oxides (SiOx), or amorphous materials such as Si (a-Si:H), Si nitride (a-Si

  16. Graphitization of boron predeposited 6H-SiC(0 0 0 1) surface

    International Nuclear Information System (INIS)

    Okonogi, Yuta; Aoki, Yuki; Hirayama, Hiroyuki

    2012-01-01

    Highlights: ► We have tried to dope the B atoms into epitaxial graphene during the graphene growing process. ► The B induced changes in the surface were characterized by low-energy electron microscopy, auger electron spectroscopy, atomic force microscopy, and scanning tunneling icroscopy. ► No obvious B atoms doping evidence into the graphene was observed. - Abstract: We examined the substitutional doping of B atoms into epitaxial graphene on the SiC(0 0 0 1) surface. B atoms were deposited on the SiC(0 0 0 1) surface in advance of the growth of graphene. The B-induced changes in the surface morphology and chemical composition were characterized at the four thermal treatment stages in the growth of graphene (at 1120, 1370, 1520, and 1770 K) by low-energy electron diffraction (LEED), auger electron spectroscopy (AES), atomic force microscopy (AFM), and scanning tunneling microscopy (STM). The B atoms were found to hinder the formation of a spatially uniform graphene layer. However, local deformation of the graphene lattice, which should be observed if B atoms are successfully doped substitutionally, was not observed in STM.

  17. One-dimensional silicon nanolines in the Si(001):H surface

    Science.gov (United States)

    Bianco, F.; Köster, S. A.; Longobardi, M.; Owen, J. H. G.; Bowler, D. R.; Renner, Ch.

    2013-12-01

    We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the monohydride Si(001):H surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect free endotaxial structure of huge aspect ratio; it can grow micrometer long at a constant width of exactly four Si dimers (1.54 nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities, from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunnelling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long sought after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality.

  18. One-dimensional silicon nanolines in the Si(001):H surface

    Energy Technology Data Exchange (ETDEWEB)

    Bianco, F.; Köster, S. A.; Longobardi, M.; Owen, J. H.G.; Renner, Ch. [Department of Condensed Matter Physics, NCCR MaNEP, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva 4 (Switzerland); Bowler, D. R. [Department of Physics and Astronomy, University College London, Gower St, London WC1E 6BT, UK and London Centre for Nanotechnology, 17-19 Gordon St, London WC1H 0AH (United Kingdom)

    2013-12-04

    We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the monohydride Si(001):H surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect free endotaxial structure of huge aspect ratio; it can grow micrometer long at a constant width of exactly four Si dimers (1.54 nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities, from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunnelling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long sought after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality.

  19. Bonding of Si wafers by surface activation method for the development of high efficiency high counting rate radiation detectors

    International Nuclear Information System (INIS)

    Kanno, Ikuo; Yamashita, Makoto; Onabe, Hideaki

    2006-01-01

    Si wafers with two different resistivities ranging over two orders of magnitude were bonded by the surface activation method. The resistivities of bonded Si wafers were measured as a function of annealing temperature. Using calculations based on a model, the interface resistivities of bonded Si wafers were estimated as a function of the measured resistivities of bonded Si wafers. With thermal treatment from 500degC to 900degC, all interfaces showed high resistivity, with behavior that was close to that of an insulator. Annealing at 1000degC decreased the interface resistivity and showed close to ideal bonding after thermal treatment at 1100degC. (author)

  20. Short Term CO2 Enrichment Increases Carbon Sequestration of Air-Exposed Intertidal Communities of a Coastal Lagoon

    Directory of Open Access Journals (Sweden)

    Amrit K. Mishra

    2018-01-01

    Full Text Available In situ production responses of air-exposed intertidal communities under CO2 enrichment are reported here for the first time. We assessed the short-term effects of CO2 on the light responses of the net community production (NCP and community respiration (CR of intertidal Z. noltei and unvegetated sediment communities of Ria Formosa lagoon, when exposed to air. NCP and CR were measured in situ in summer and winter, under present and CO2 enriched conditions using benthic chambers. Within chamber CO2 evolution measurements were carried out by a series of short-term incubations (30 min using an infra-red gas analyser. Liner regression models fitted to the NCP-irradiance responses were used to estimate the seasonal budgets of air-exposed, intertidal production as determined by the daily and seasonal variation of incident photosynthetic active radiation. High CO2 resulted in higher CO2 sequestration by both communities in both summer and winter seasons. Lower respiration rates of both communities under high CO2 further contributed to a potential negative climate feedback, except in winter when the CR of sediment community was higher. The light compensation points (LCP (light intensity where production equals respiration of Z. noltei and sediment communities also decreased under CO2 enriched conditions in both seasons. The seasonal community production of Z. noltei was 115.54 ± 7.58 g C m−2 season−1 in summer and 29.45 ± 4.04 g C m−2 season−1 in winter and of unvegetated sediment was 91.28 ± 6.32 g C m−2 season−1 in summer and 25.83 ± 4.01 g C m−2 season−1 in winter under CO2 enriched conditions. Future CO2 conditions may increase air-exposed seagrass production by about 1.5-fold and unvegetated sediments by about 1.2-fold.

  1. Roughening instability and ion-induced viscous relaxation of SiO2 surfaces

    International Nuclear Information System (INIS)

    Mayer, T.M.; Chason, E.; Howard, A.J.

    1994-01-01

    We characterize the development of nanometer scale topography (roughness) on SiO 2 surfaces as a result of low energy, off-normal ion bombardment, using in situ energy dispersive x-ray reflectivity and atomic force microscopy. Surfaces roughen during sputtering by heavy ions (Xe), with roughness increasing approximately linearly with ion fluence up to 10 17 cm -2 . A highly coherent ripple structure with wavelength of 30 nm and oriented with the wave vector parallel to the direction of incidence is observed after Xe sputtering at 1 keV. Lower frequency, random texture is also observed. Subsequent light ion (H, He) bombardment smoothens preroughened surfaces. The smoothing kinetics are first order with ion fluence and strongly dependent on ion energy in the range 0.2--1 eV. We present a linear model to account for the experimental observations which includes roughening both by random stochastic processes and by development of a periodic surface instability due to sputter yield variations with surface curvature which leads to ripple development. Smoothing occurs via ion bombardment induced viscous flow and surface diffusion. From the smoothing kinetics with H and He irradiation we measure the radiation enhanced viscosity of SiO 2 and find values on the order of 1--20x10 12 N s m -2 . The viscous relaxation per ion scales as the square root of the ion induced displacements in the film over the range of the ion penetration, suggesting short-lived defects with a bimolecular annihilation mechanism. The surface instability mechanism accounts for the ripple formation, while inclusion of stochastic roughening produces the random texture and reproduces the observed linear roughening kinetics and the magnitude of the overall roughness

  2. Adsorption of selenium atoms at the Si(1 1 1)-7 x 7 surface: A combination of scanning tunnelling microscopy and density functional theory studies

    International Nuclear Information System (INIS)

    Wu, S.Q.; Zhou Yinghui; Wu Qihui; Pakes, C.I.; Zhu Zizhong

    2011-01-01

    Graphical abstract: A selenium atom, which adsorbs at site close to a Si adatom and bonds with this Si adatom and one of its backbonding Si atoms on the Si(1 1 1)-7 x 7 surface, will break the Si-Si bond and consequently disorder the Si reconstruction surface. Research highlights: → STM and DFT are used to study the adsorption properties of Se atoms on a Si surface. → The adsorption site of Se atom on the Si surface has been identified. → The electronic effect of Se atom on the adsorbed Si surface has been ivestigaed. → The Se atom weakens the bond between two Si atom bonding with the Se atom. - Abstract: The adsorption of selenium (Se) atoms at the Si(1 1 1)-7 x 7 surface has been investigated using both scanning tunnelling microscopy (STM) and density functional theory calculations. A single Se atom prefers to adsorb at sites close to a Si adatom and bonds with this Si adatom and one of its backbonding Si atoms. The adsorption sites are referred to as A*-type sites in this article. The density of the conduction band (empty states) of the Si adatom increases as a result of the adsorption of a Se atom, which causes the Si adatom to become brighter in the empty state STM images. At the same time, the adsorption of the Se atom weakens the bonding between the Si adatom and its backbonding Si atom due to the charge transfer from them to the Se atom, and consequently destructs the ordered Si(1 1 1)-7 x 7 surface with increasing Se coverage.

  3. Influence of deuterium on kinetics of methane isotope exchange with surface deuteroxy groups of Pt/SiO2 catalysts

    International Nuclear Information System (INIS)

    Musoyan, L.M.; Aliev, R.K.

    1990-01-01

    Reaction of isotope methane exchange with surface deuteroxy groups of 2 % Pt/SiO 2 catalyst was studied. It is shown that preliminarily chemisorbed deuterium does not decelerate the exchange reaction, but changes its mechanism. Activation energy of exchange on clean surface is equal to 25 kJ/mol; it grows in the presence of deuterium on the surface

  4. Metal-like Band Structures of Ultrathin Si {111} and {112} Surface Layers Revealed through Density Functional Theory Calculations.

    Science.gov (United States)

    Tan, Chih-Shan; Huang, Michael H

    2017-09-04

    Density functional theory calculations have been performed on Si (100), (110), (111), and (112) planes with tunable number of planes for evaluation of their band structures and density of states profiles. The purpose is to see whether silicon can exhibit facet-dependent properties derived from the presence of a thin surface layer having different band structures. No changes have been observed for single to multiple layers of Si (100) and (110) planes with a consistent band gap between the valence band and the conduction band. However, for 1, 2, 4, and 5 Si (111) and (112) planes, metal-like band structures were obtained with continuous density of states going from the valence band to the conduction band. For 3, 6, and more Si (111) planes, as well as 3 and 6 Si (112) planes, the same band structure as that seen for Si (100) and (110) planes has been obtained. Thus, beyond a layer thickness of five Si (111) planes at ≈1.6 nm, normal semiconductor behavior can be expected. The emergence of metal-like band structures for the Si (111) and (112) planes are related to variation in Si-Si bond length and bond distortion plus 3s and 3p orbital electron contributions in the band structure. This work predicts possession of facet-dependent electrical properties of silicon with consequences in FinFET transistor design. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Electrical properties of Al foil/n-4H-SiC Schottky junctions fabricated by surface-activated bonding

    Science.gov (United States)

    Morita, Sho; Liang, Jianbo; Matsubara, Moeko; Dhamrin, Marwan; Nishio, Yoshitaka; Shigekawa, Naoteru

    2018-02-01

    We fabricate 17-µm-thick Al foil/n-4H-SiC Schottky junctions by surface-activated bonding. Their current–voltage and capacitance–voltage characteristics are compared with those of Schottky junctions fabricated by evaporating Al layers on n-4H-SiC epilayers. We find that the ideality factor of Al foil/SiC junctions is larger than that of conventional junctions, which is due to the irradiation of the fast atom beam (FAB) of Ar. The ideality factor of Al foil/SiC junctions is improved by annealing at 400 °C. We also find that the Schottky barrier height is increased by FAB irradiation, which is likely to be due to the negative charges formed at SiC surfaces.

  6. Effect of nano-Si3N4 surface treatment on the tribological performance of epoxy composite

    Directory of Open Access Journals (Sweden)

    2010-03-01

    Full Text Available To overcome the disadvantages generated by the loose nano-partilce agglomerates dispersed in polymer composites, a chemical grafting method was applied to modify nano-Si3N4 by covalently bonding glycidyl methacrylate (GMA onto the particles. The tribological behavior of the epoxy composite filled with nano-Si3N4 or GMA treated Si3N4 (Si3N4-g-PGMA was studied using a ring-on-block wear tester under dry sliding, and the worn surface of the filled epoxy composite and the surface roughness of the composites after the sliding wear test were investigated by SEM (scanning electron microscopy and AFM (atomic force microscopy, respectively. In comparison to the composites filled with untreated nano-Si3N4 particles, the composites with the grafted Sinano-3N4 exhibit improved sliding wear resistance and reduced friction coefficient owing to the chemical bonding at the filler/matrix interface.

  7. Initial oxidation processes of Si(001) surfaces by supersonic O2 molecular beams. Different oxidation mechanisms for clean and partially-oxidized surfaces

    International Nuclear Information System (INIS)

    Teraoka, Yuden; Yoshigoe, Akitaka

    2002-01-01

    Potential energy barriers for dissociative chemisorption of O 2 molecules on Si(001) clean surfaces were investigated using supersonic O 2 molecular beams and photoemission spectroscopy. Relative initial sticking probabilities of O 2 molecules and the saturated oxygen amount on the Si(001) surface were measured as a function of incident energy of O 2 molecules. Although the probability was independent on the incident energy in the region larger than 1 eV, the saturated oxygen amount was dependent on the incident energy without energy thresholds. An Si-2p photoemission spectrum of the Si(001) surface oxidized by thermal O 2 gas revealed the oxygen insertion into dimer backbond sites. These facts indicate that a reaction path of the oxygen insertion into dimer backbonds through bridge sites is open for the clean surface oxidation, and the direct chemisorption probability at the backbonds is negligibly small comparing with that at the bridge sites. (author)

  8. Reaction paths of alane dissociation on the Si(0 0 1) surface

    Science.gov (United States)

    Smith, Richard; Bowler, David R.

    2018-03-01

    Building on our earlier study, we examine the kinetic barriers to decomposition of alane, AlH3, on the Si(0 0 1) surface, using the nudged elastic band approach within density functional theory. We find that the initial decomposition to AlH with two H atoms on the surface proceeds without a significant barrier. There are several pathways available to lose the final hydrogen, though these present barriers of up to 1 eV. Incorporation is more challenging, with the initial structures less stable in several cases than the starting structures, just as was found for phosphorus. We identify a stable route for Al incorporation following selective surface hydrogen desorption (e.g. by scanning tunneling microscope tip). The overall process parallels PH3, and indicates that atomically precise acceptor doping should be possible.

  9. New bonding configuration on Si(111) and Ge(111) surfaces induced by the adsorption of alkali metals

    DEFF Research Database (Denmark)

    Lottermoser, L.; Landemark, E.; Smilgies, D.M.

    1998-01-01

    The structure of the (3×1) reconstructions of the Si(111) and Ge(111) surfaces induced by adsorption of alkali metals has been determined on the basis of surface x-ray diffraction and low-energy electron diffraction measurements and density functional theory. The (3×1) surface results primarily f...... from the substrate reconstruction and shows a new bonding configuration consisting of consecutive fivefold and sixfold Si (Ge) rings in 〈11̅ 0〉 projection separated by channels containing the alkali metal atoms. © 1998 The American Physical Society......The structure of the (3×1) reconstructions of the Si(111) and Ge(111) surfaces induced by adsorption of alkali metals has been determined on the basis of surface x-ray diffraction and low-energy electron diffraction measurements and density functional theory. The (3×1) surface results primarily...

  10. Block copolymer-templated chemistry on Si, Ge, InP, and GaAs surfaces.

    Science.gov (United States)

    Aizawa, Masato; Buriak, Jillian M

    2005-06-29

    Patterning of semiconductor surfaces is an area of intense interest, not only for technological applications, such as molecular electronics, sensing, cellular recognition, and others, but also for fundamental understanding of surface reactivity, general control over surface properties, and development of new surface reactivity. In this communication, we describe the use of self-assembling block copolymers to direct semiconductor surface chemistry in a spatially defined manner, on the nanoscale. The proof-of-principle class of reactions evaluated here is galvanic displacement, in which a metal ion, M+, is reduced to M0 by the semiconductor, including Si, Ge, InP, and GaAs. The block copolymer chosen has a polypyridine block which binds to the metal ions and brings them into close proximity with the surface, at which point they undergo reaction; the pattern of resulting surface chemistry, therefore, mirrors the nanoscale structure of the parent block copolymer. This chemistry has the added advantage of forming metal nanostructures that result in an alloy or intermetallic at the interface, leading to strongly bound metal nanoparticles that may have interesting electronic properties. This approach has been shown to be very general, functioning on a variety of semiconductor substrates for both silver and gold deposition, and is being extended to organic and inorganic reactions on a variety of conducting, semiconducting, and insulating substrates.

  11. Modification of wetting properties of SiOx surfaces by Ar implantation

    International Nuclear Information System (INIS)

    Chasse, M.; Ross, G.G.

    2002-01-01

    The aim of this experiment is to better understand the mechanism leading to the modification of the wetting properties of insulating (quartz) and non-insulating (Si) surfaces by ion and atom implantation. Coupons of quartz and silicon (with its native oxide layer) have been irradiated by means of 3 keV Ar ions and atoms with a fluence of 1.8x10 16 Ar/cm 2 . Some exposures to Ar ions have been performed under oxygen partial pressure (∼5x10 -5 Torr). The samples have been characterized before and after implantation by means of contact angle hysteresis measurements, Rutherford backscattering spectroscopy (RBS) and angle resolved X-ray photoelectron spectroscopy (ARXPS). Irradiation with argon ions or atoms has produced a more hydrophilic surface immediately after implantation. Ar depth profiling by means of RBS has shown that 4% of implanted (atoms and ions) Ar has been retained in quartz, while 13% and 21% of Ar has been retained in silicon after Ar implantation with and without oxygen partial pressure, respectively. However, no difference in the depth distribution has been measured. Characterization by means of ARXPS has shown a noticeable change in the composition of the quartz and silicon oxide surfaces (implantation of Si under an O 2 partial pressure producing a thicker oxide layer) which can explain the differences in the reported Ar retention. In general, the irradiation have removed a large portion of oxygen present in the pre-existing carbonaceous layer on the surface of the samples. The ion beam irradiation has been more efficient than atom beam to both, increase the wettability of the quartz surfaces and enhance the concentration of the carbonaceous layer in 'dispersed islands' on the surfaces

  12. Modification of wetting properties of SiO x surfaces by Ar implantation

    Science.gov (United States)

    Chassé, M.; Ross, G. G.

    2002-06-01

    The aim of this experiment is to better understand the mechanism leading to the modification of the wetting properties of insulating (quartz) and non-insulating (Si) surfaces by ion and atom implantation. Coupons of quartz and silicon (with its native oxide layer) have been irradiated by means of 3 keV Ar ions and atoms with a fluence of 1.8×10 16 Ar/cm 2. Some exposures to Ar ions have been performed under oxygen partial pressure (˜5×10 -5 Torr). The samples have been characterized before and after implantation by means of contact angle hysteresis measurements, Rutherford backscattering spectroscopy (RBS) and angle resolved X-ray photoelectron spectroscopy (ARXPS). Irradiation with argon ions or atoms has produced a more hydrophilic surface immediately after implantation. Ar depth profiling by means of RBS has shown that 4% of implanted (atoms and ions) Ar has been retained in quartz, while 13% and 21% of Ar has been retained in silicon after Ar implantation with and without oxygen partial pressure, respectively. However, no difference in the depth distribution has been measured. Characterization by means of ARXPS has shown a noticeable change in the composition of the quartz and silicon oxide surfaces (implantation of Si under an O 2 partial pressure producing a thicker oxide layer) which can explain the differences in the reported Ar retention. In general, the irradiation have removed a large portion of oxygen present in the pre-existing carbonaceous layer on the surface of the samples. The ion beam irradiation has been more efficient than atom beam to both, increase the wettability of the quartz surfaces and enhance the concentration of the carbonaceous layer in "dispersed islands" on the surfaces.

  13. Formation of Micro-Cones on a Surface of Ni/Si Structure By Nd:Yag Laser Radiation

    OpenAIRE

    Medvids, A; Karabko, A; Onufrijevs, P; Daukšta, E; Pikulins, A; Dostanko, A

    2009-01-01

    For formation of micro-cones on a surface of a semiconductor very often are used femtosecond laser induced plasma [1] or chemical vapor depositions with catalytic metal on Si [2]. We propose another method for formation of micro-cones by basic frequency of microsecond Nd:YAG on Ni/Si structure. It was observed self-organization of cone-like microstructures on a surface of Si with Ni covered layer with thickness 30 nm by Nd:YAG laser beam at threshold intensity 3.15 MW/cm2. The structural and...

  14. Evidence for a gold trimer on the Si(111)-√{ 21} ×√{ 21}-(Ag + Au) surface

    Science.gov (United States)

    Takahashi, Toshio; Yamaguchi, Yudai; Shirasawa, Tetsuroh; Voegeli, Wolfgang; Tajiri, Hiroo

    2018-02-01

    The structure of the Si(111)-√{ 21} ×√{ 21}-(Ag + Au) surface is studied using surface X-ray diffraction and fluorescence yield measurements. The fluorescence measurements indicate that there are three gold atoms in the unit cell. From the analysis of the diffraction data, it is shown that the gold atoms form a trimer with an interatomic distance of 2.8 Å and that the sides of the trimer are almost parallel to the Si(111)-1 × 1 fundamental vectors, similar to that in the Si(111)-√{ 3} ×√{ 3}-Au structure.

  15. AES study of the reaction between a thin Fe-film and β-SiC (100) surface

    International Nuclear Information System (INIS)

    Mizokawa, Yusuke; Nakanishi, Shigemitsu; Miyase, Sunao

    1989-01-01

    The solid state reaction between thin Fe-films and β-SiC(100) in UHV has been studied using AES. Even at room temperature, the reaction between the thin Fe-film and SiC occurred and formed Fe-silicide and graphite with a minor product of Fe-carbide (Fe 3 C). The reaction proceeded with an increase of Fe-coverage to some extent. With annealing of 15 A-Fe-film/SiC below 540degC, the Fe-silicide formation was accelerated, but because the amount of available Fe was small, the dissolved carbon atoms were forced to form not the Fe-carbide but the graphite phase. Above 640degC, the Fe-silicide started to decompose and the carbon atoms diffused to the surface and formed surface graphite layers. With annealing at 1080degC, the free-Si segregats at the surface and formed Si-Si bonds, as well as the Si-C bonds consuming the surface graphite phase. (author)

  16. "Kinetics of the adsorption of atomic oxygen (N2O) on the Si(001)2x1 surface as revealed by the change in the surface conductance"

    NARCIS (Netherlands)

    Wormeester, Herbert; Keim, Enrico G.; van Silfhout, Arend

    1992-01-01

    The adsorption behaviour of N2O on the Si(001)2 × 1 surface at 300 K substrate temperature has been investigated by measuring in situ the surface conductance during the reaction process. For comparison we monitored in the same way the adsorption of O2 on the same surface which ultimately leads to

  17. Enhanced protein loading on a planar Si(111)-H surface with second generation NTA

    Science.gov (United States)

    Liu, Xiang; Han, Huan-Mei; Liu, Hong-Bo; Xiao, Shou-jun

    2010-08-01

    A Si(111)-H surface was modified via a direct reaction between Si-H and 1-undecylenic acid (UA) under microwave irradiation to form molecular monolayers with terminal carboxyl groups. After esterifying carboxylic acid being esterified with N-hydroxysuccinimide (NHS), aminobutyl nitrilotriacetic acid (ANTA) was bound to the silicon surface through amidation (pH = 8.0) between its primary amino group and NHS-ester, producing nitrilotriacetic acid (NTA) anions. Then hexa-histidine tagged thioredoxin-urodilatin (his-tagged protein) and FITC-labeled hexa-histidine tagged thioredoxin-urodilatin (FITC-his-tagged protein) can be anchored after NTA was coordinated with Ni 2+. Furthermore, the NTA-terminated chip was acidified with 0.1 M HCl and subsequently esterified with NHS and then amidated with ANTA again to produce a second generation NTA. Thus the surface density of nitrilotriacetic acid anions was improved and resultantly that of anchored proteins was also enhanced through the iterative reactions. Both multiple transmission-reflection infrared spectroscopy (MTR-IR) and fluorescence scanning measurements demonstrated a proximate 1.63 times of anchored proteins on the second generation NTA/Ni 2+ as that on the first generation NTA/Ni 2+ monolayer.

  18. Mechanism of bonding and debonding using surface activated bonding method with Si intermediate layer

    Science.gov (United States)

    Takeuchi, Kai; Fujino, Masahisa; Matsumoto, Yoshiie; Suga, Tadatomo

    2018-04-01

    Techniques of handling thin and fragile substrates in a high-temperature process are highly required for the fabrication of semiconductor devices including thin film transistors (TFTs). In our previous study, we proposed applying the surface activated bonding (SAB) method using Si intermediate layers to the bonding and debonding of glass substrates. The SAB method has successfully bonded glass substrates at room temperature, and the substrates have been debonded after heating at 450 °C, in which TFTs are fabricated on thin glass substrates for LC display devices. In this study, we conducted the bonding and debonding of Si and glass in order to understand the mechanism in the proposed process. Si substrates are also successfully bonded to glass substrates at room temperature and debonded after heating at 450 °C using the proposed bonding process. By the composition analysis of bonding interfaces, it is clarified that the absorbed water on the glass forms interfacial voids and cause the decrease in bond strength.

  19. Deposition of phospholipid layers on SiO{sub 2} surface modified by alkyl-SAM islands

    Energy Technology Data Exchange (ETDEWEB)

    Tero, R.; Takizawa, M.; Li, Y.J.; Yamazaki, M.; Urisu, T

    2004-11-15

    Formation of the supported planar bilayer of dipalmitoylphosphatidylcholine (DPPC) on SiO{sub 2} surfaces modified with the self-assembled monolayer (SAM) of octadecyltrichlorosilane (OTS) has been investigated by atomic force microscopy (AFM). DPPC was deposited by the fusion of vesicles on SiO{sub 2} surfaces with OTS-SAM islands of different sizes and densities. The DPPC bilayer membrane formed self-organizingly on the SiO{sub 2} surface with small and sparse OTS islands, while did not when the OTS islands were larger and denser. The relative size between the vesicles and the SiO{sub 2} regions is the critical factor for the formation of the DPPC bilayer membrane.

  20. Surface layer determination for the Si spheres of the Avogadro project

    Science.gov (United States)

    Busch, I.; Azuma, Y.; Bettin, H.; Cibik, L.; Fuchs, P.; Fujii, K.; Krumrey, M.; Kuetgens, U.; Kuramoto, N.; Mizushima, S.

    2011-04-01

    For the accurate determination of the Avogadro constant, two 28Si spheres were produced, whose macroscopic density, in addition to other values, must be determined. To make a contribution to the new definition of the kilogram, a relative standard uncertainty of less than 2 × 10-8 has to be achieved. Each silicon surface is covered by a surface layer (SL). Consequently, correction parameters for the SL are determined to be applied to the mass and volume determination of the enriched spheres. With the use of a large set of surface analysing techniques, the structure of the SL is investigated. An unexpected metallic contamination existing on the sphere surface enlarges the uncertainty contribution of the correction parameters above the originally targeted value of 1 × 10-8. In the framework of this investigation this new obstacle is resolved in two ways. A new combination of analytical methods is applied to measure the SL mass mSL and the thickness dSL, including this new contamination, with an uncertainty of u(mSL) = 14.5 µg and 14.4 µg, respectively, and u(dSL) = 0.33 nm and 0.32 nm for the 28Si spheres AVO28-S5 and AVO28-S8, respectively. In the second part of the work, the chemical composition of these metallic contaminations is found to be Cu, Ni and Zn silicide compounds. For the removal of this contamination, a special procedure is developed, tested and applied to the spheres to produce the originally expected surface structure on the spheres. After the application of this new procedure the use of x-ray reflectometry directly at the spheres will be possible. It is expected to reduce the uncertainty contribution due to the SL down to 1 × 10-8.

  1. Influence of Group-III-metal and Ag adsorption on the Ge growth on Si(111) and its vicinal surface

    Energy Technology Data Exchange (ETDEWEB)

    Speckmann, Moritz

    2011-12-15

    In the framework of this thesis the surfactant-mediated heteroepitaxial growth of Ge on different Si surfaces has been investigated by means of low-energy electron microscopy, low-energy electron diffraction, spot-profile analysing low-energy electron diffraction, X-ray standing waves, grazing-incidence X-ray diffraction, x-ray photoemission electron microscopy, X-ray photoemission spectroscopy, scanning tunneling microscopy, scanning electron microscopy, transmission electron microscopy, and density functional theory calculations. As surfactants gallium, indium, and silver were used. The adsorption of Ga or In on the intrinsically faceted Si(112) surface leads to a smoothing of the surface and the formation of (N x 1) reconstructions, where a mixture of building blocks of different sizes is always present. For both adsorbates the overall periodicity on the surface is strongly dependent on the deposition temperature and the coverage. For the experimental conditions chosen here, the periodicities are in the range of 5.2{<=}N{<=}6.5 and 3.4{<=}N{<=}3.7 for Ga and In, respectively. The (N x 1) unit cells of Ga/Si(112) and In/Si(112) are found to consist of adsorbate atoms on terrace and step-edge sites, forming two atomic chains along the [110] direction. In the Ga-induced structures two Ga-vacancies per unit cell (one in the terrace and one in the step-edge site) are found and a continuous vacancy line on the surface is formed. In the In/Si(112) structure only one vacancy per unit cell in the step-edge site exists and, thus, a continuous adsorbate chain on the terrace sites is present. The adsorption of Ga or In on Si(112) strongly influences the subsequent Ge growth. Ge deposition on the Ga-terminated Si(112) surface leads to the formation of Ge nanowires, which are elongated along the Ga chains and reach lengths of up to 2000 nm for a growth temperature of 600 C. On In-covered Si(112), both small dash-like Ge islands and triangularly shaped islands are found, where

  2. Influence of the pre-adsorption of group III metals on the growth of Ge nanostructures on vicinal Si surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Speckmann, Moritz; Schmidt, Thomas; Flege, Jan Ingo; Heidmann, Inga; Hoecker, Jan; Wilkens, Torsten; Falta, Jens [Institute of Solid State Physics, University of Bremen (Germany)

    2010-07-01

    The employment of metals as surfactants (surface active agents) is a promising approach to influence the growth of Ge nanostructures on Si surfaces. Especially for group III and group V elements an enhanced or suppressed Stranski-Krastanov growth behaviour is found, respectively. For all group III metal on silicon systems presented in this study we observe a drastic change of the surface morphology after adsorption of a few monolayers. For the investigations we used a variety of surface sensitive techniques, e.g., scanning tunneling microscopy (STM), spot profile analysing low-energy electron diffraction (SPA-LEED), low-energy electron microscopy (LEEM), and X-ray standing waves (XSW). On the one hand, the adsorption of Ga and In leads to a smoothening of the intrinsically unstable Si(112) surface and the development of 1D metal chains. But on the other hand, the stable Si(113) is decomposed into a regular array of nanofacets after adsorption of Ga. For all cases shown here the possibility of growing highly anisotropic Ge Islands is demonstrated (Ga/Si(113),Ga/Si(112),In/Si(112)).

  3. AlSiTiN and AlSiCrN multilayer coatings: Effects of structure and surface composition on tribological behavior under dry and lubricated conditions

    Energy Technology Data Exchange (ETDEWEB)

    Faga, Maria Giulia; Gautier, Giovanna [National Research Council (CNR), Imamoter, Strada delle Cacce 73, 10135, Torino (Italy); Cartasegna, Federico [Clean NT Lab, Environment Park S.p.A., Via Livorno 60, 10144, Torino (Italy); Priarone, Paolo C. [Politecnico di Torino, Department of Management and Production Engineering, Corso Duca degli Abruzzi 24, 10129, Torino (Italy); Settineri, Luca, E-mail: luca.settineri@polito.it [Politecnico di Torino, Department of Management and Production Engineering, Corso Duca degli Abruzzi 24, 10129, Torino (Italy)

    2016-03-01

    Graphical abstract: - Highlights: • The demand for high performance nanostructured coatings has been increasing. • AlSiTiN and AlSiCrN nanocomposite coatings were deposited by PVD technique. • Coatings were analyzed in terms of structure, hardness and adhesion. • Tribological properties under dry and lubricated conditions were studied. • The effects of surface and bulk properties on friction evolution were assessed. - Abstract: Nanocomposite coatings have been widely studied over the last years because of their high potential in several applications. The increased interest for these coatings prompted the authors to study the tribological properties of two nanocomposites under dry and lubricated conditions (applying typical MQL media), in order to assess the influence of the surface and bulk properties on friction evolution. To this purpose, multilayer and nanocomposite AlSiTiN and AlSiCrN coatings were deposited onto tungsten carbide-cobalt (WC-Co) samples. Uncoated WC-Co materials were used as reference. Coatings were analyzed in terms of hardness and adhesion. The structure of the samples was assessed by X-ray diffraction (XRD), while the surface composition was studied by XPS analysis. Friction tests were carried out under both dry and lubricated conditions using an inox ball as counterpart. Both coatings showed high hardness and good adhesion to the substrate. As far as the friction properties are concerned, in dry conditions the surface properties affect the sliding contact at the early beginning, while bulk structure and tribolayer formation determine the main behavior. Only AlSiTiN coating shows a low and stable coefficient of friction (COF) under dry condition, while the use of MQL media results in a rapid stabilization of the COF for all the materials.

  4. HPDL Remelting of Anodised Al-Si-Cu Cast Alloys Surfaces

    Directory of Open Access Journals (Sweden)

    K. Labisz

    2012-12-01

    Full Text Available The results of the investigations of the laser remelting of the AlSi9Cu4 cast aluminium alloy with the anodised and non-anodised surfacelayer and hardness changes have been presented in this paper. The surface layer of the tested aluminium samples was remelted with thelaser of a continuous work. The power density was from 8,17•103 W/cm2 to 1,63•104 W/cm2. The metallographic tests were conducted inform of light microscope investigations of the received surface layer. The main goal of the investigation was to find the relation betweenthe laser beam power and its power density falling on a material, evaluating the shape and geometry of the remelted layers and theirhardness. As the substrate material two types of surfaces of the casted AlSi9Cu4 alloy were applied – the non–treated as cast surface aswell the anodized surface. As a device for this type of surface laser treatment the High Power Diode Laser was applied with a maximumpower of 2.2 kW and the dimensions of the laser beam focus of 1.8 x 6.8 mm. By mind of such treatment it is also possible to increasehardness as well eliminate porosity and develop metallurgical bonding at the coating-substrate interface. Suitable operating conditions forHPDL laser treatment were finally determined, ranging from 1.0 to 2.0 kW. Under such conditions, taking into account the absorptionvalue, the effects of laser remelting on the surface shape and roughness were studied. The results show that surface roughness is reducedwith increasing laser power by the remelting process only for the non-anodised samples, and high porosity can be found in the with highpower remelted areas. The laser influence increases with the heat input of the laser processing as well with the anodisation of the surface,because of the absorption enhancement ensured through the obtained alumina layer.

  5. Stabilization of the ceria ι-phase (Ce7O12) surface on Si(111)

    Science.gov (United States)

    Wilkens, H.; Schuckmann, O.; Oelke, R.; Gevers, S.; Schaefer, A.; Bäumer, M.; Zoellner, M. H.; Schroeder, T.; Wollschläger, J.

    2013-03-01

    In this work a 250 nm CeO2(111) film grown on a hex-Pr2O3(0001)/Si(111) system is annealed at 660 °C for 30 min to form the ι bulk phase of Ce7O12 as controlled by x-ray photoelectron spectroscopy. The (111) surface of the stabilized ι phase is characterized via high-resolution low-energy electron diffraction. The ι-phase surface exhibits a (√7 ×√7 )R19.1° superstructure with two mirror domains. This structure is attributed to a periodic ordering of oxygen vacancies compared to the fluorite structure of CeO2.

  6. Understanding the growth mechanism of graphene on Ge/Si(001) surfaces

    Science.gov (United States)

    Dabrowski, J.; Lippert, G.; Avila, J.; Baringhaus, J.; Colambo, I.; Dedkov, Yu S.; Herziger, F.; Lupina, G.; Maultzsch, J.; Schaffus, T.; Schroeder, T.; Kot, M.; Tegenkamp, C.; Vignaud, D.; Asensio, M.-C.

    2016-01-01

    The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD and molecular beam epitaxy (MBE) growth of graphene on the technologically relevant Ge(001)/Si(001) substrate from ethene (C2H4) precursor and describe the physical properties of the films as well as we discuss the surface reaction and diffusion processes that may be responsible for the observed behavior. Using nano angle resolved photoemission (nanoARPES) complemented by transport studies and Raman spectroscopy as well as density functional theory (DFT) calculations, we report the direct observation of massless Dirac particles in monolayer graphene, providing a comprehensive mapping of their low-hole doped Dirac electron bands. The micrometric graphene flakes are oriented along two predominant directions rotated by 30° with respect to each other. The growth mode is attributed to the mechanism when small graphene “molecules” nucleate on the Ge(001) surface and it is found that hydrogen plays a significant role in this process. PMID:27531322

  7. Ozone Oxidation of Self-Assembled Monolayers on SiOx-Coated Zinc Selenide Surfaces

    Science.gov (United States)

    McIntire, T. M.; Ryder, O. S.; Finlayson-Pitts, B. J.

    2008-12-01

    Airborne particles are important for visibility, human health, climate, and atmospheric reactions. Atmospheric particles contain a significant fraction of organics and such compounds present on airborne particles are susceptible to oxidation by atmospheric oxidants, such as OH, ozone, halogen atoms, and nitrogen trioxide. Oxidized organics associated with airborne particles are thought to be polar, hygroscopic species with enhanced cloud-nucleating properties. Oxide layers on silicon, or SiO2-coated substrates, act as models of environmentally relevant surfaces such as dust particles upon which organics adsorb. We have shown previously that ozone oxidation of unsaturated self-assembled monolayers (SAMs) on silicon attenuated total reflectance (ATR) crystals leads to the formation of carbonyl groups and micron-sized, hydrophobic organic aggregates surrounded by carbon depleted substrate that do not have increased water uptake as previously assumed. Reported here are further ATR-FTIR studies of the oxidation of alkene SAMs on ZnSe and SiO2-coated ZnSe. These substrates have the advantage that they transmit below 1500 cm-1, allowing detection of additional product species. These experiments show that the loss of C=C and formation of carbonyl groups is also accompanied by formation of a peak at 1110 cm-1, attributed to the secondary ozonide. Details concerning the products and mechanism of ozonolysis of alkene SAMs on surfaces based on these new data are presented and the implications for the oxidation of alkenes on airborne dust particles are discussed.

  8. Fabrication of Surface Level Cu/Si Cp Nano composites by Friction Stir Processing Route

    International Nuclear Information System (INIS)

    Srinivasan, R. C.; Karunanithi, M.

    2015-01-01

    Friction stir processing (FSP) technique has been successfully employed as low energy consumption route to prepare copper based surface level nano composites reinforced with nano sized silicon carbide particles (Si Cp). The effect of FSP parameters such as tool rotational speed, processing speed, and tool tilt angle on microstructure and microhardness was investigated. Single pass FSP was performed based on Box-Behnken design at three factors in three levels. A cluster of blind holes 2 mm in diameter and 3 mm in depth was used as particulate deposition technique in order to reduce the agglomeration problem during composite fabrication. K-type thermocouples were used to measure temperature histories during FSP. The results suggest that the heat generation during FSP plays a significant role in deciding the microstructure and microhardness of the surface composites. Microstructural observations revealed a uniform dispersion of nano sized Si Cp without any agglomeration problem and well bonded with copper matrix at different process parameter combinations. X-ray diffraction study shows that no intermetallic compound was produced after processing. The microhardness of nano composites was remarkably enhanced and about 95% more than that of copper matrix

  9. Fabrication of Surface Level Cu/SiCp Nanocomposites by Friction Stir Processing Route

    Directory of Open Access Journals (Sweden)

    Cartigueyen Srinivasan

    2015-01-01

    Full Text Available Friction stir processing (FSP technique has been successfully employed as low energy consumption route to prepare copper based surface level nanocomposites reinforced with nanosized silicon carbide particles (SiCp. The effect of FSP parameters such as tool rotational speed, processing speed, and tool tilt angle on microstructure and microhardness was investigated. Single pass FSP was performed based on Box-Behnken design at three factors in three levels. A cluster of blind holes 2 mm in diameter and 3 mm in depth was used as particulate deposition technique in order to reduce the agglomeration problem during composite fabrication. K-type thermocouples were used to measure temperature histories during FSP. The results suggest that the heat generation during FSP plays a significant role in deciding the microstructure and microhardness of the surface composites. Microstructural observations revealed a uniform dispersion of nanosized SiCp without any agglomeration problem and well bonded with copper matrix at different process parameter combinations. X-ray diffraction study shows that no intermetallic compound was produced after processing. The microhardness of nanocomposites was remarkably enhanced and about 95% more than that of copper matrix.

  10. Occupied and unoccupied electronic states on vicinal Si(111) surfaces decorated with monoatomic gold chains; Besetzte und unbesetzte elektronische Zustaende vizinaler Si(111)-Oberflaechen mit atomaren Goldketten

    Energy Technology Data Exchange (ETDEWEB)

    Biedermann, Kerstin

    2012-07-12

    In this work, the occupied and unoccupied electronic states of vicinal Si(111)-Au surfaces were investigated. The research focused on amending the experimental electronic band structure by two-photon photoemission and laser-based photoemission and bringing it in line with theoretical band structure calculations. This work dealt with the Si(553)-Au, the Si(111)-(5x2)-Au and the Si(557)-Au surface. Angle-resolved UV-photoelectron spectroscopy gave access to the occupied part of the band structure and thus to the energetic position, the dispersion and the symmetry of the occupied states. Bichromatic two-photon photoemission, however, revealed information about the energetics and, in addition, about the dynamics of unoccupied states on a femtosecond timescale. Notably, the selective polarization of the laser pulses allowed for distinguishing and classifying many of the states with respect to their symmetry. All three surfaces exhibited both surface and bulk states in the occupied part of the band structure. They could be clearly identified and separated from surface contributions by means of tight-binding calculations of the bulk band structure of silicon and by comparison to each other. An added similarity of these surfaces are the one-dimensional Rashba-split gold states, which definitely show dispersion along the chains but not perpendicular to them. All surfaces exhibit states which can easily be assigned to the gold chains. Additional features, however, cannot be attributed clearly to the characteristics of the complex surface reconstruction in all cases. An assignment to surface states was only successfully accomplished for Si(553)-Au. The primary emphasis of this photoemission study was on the Si(553)-Au surface, which shows the smallest defect density in comparison to the other surfaces and hence exhibits the sharpest peaks in the experimental spectra. In accordance with ab-initio band structure calculations this surface also displays, in addition to one

  11. Evidence of surface loss as ubiquitous limiting damping mechanism in SiN micro- and nanomechanical resonators

    DEFF Research Database (Denmark)

    Villanueva, Luis Guillermo; Schmid, Silvan

    2014-01-01

    Silicon nitride (SiN) micro- and nanomechanical resonators have attracted a lot of attention in various research fields due to their exceptionally high quality factors (Qs). Despite their popularity, the origin of the limiting loss mechanisms in these structures has remained controversial....... In this Letter we propose an analytical model combining acoustic radiation loss with intrinsic loss. The model accurately predicts the resulting mode-dependent Qs of low-stress silicon-rich and high-stress stoichiometric SiN membranes. The large acoustic mismatch of the low-stress membrane to the substrate seems......, and cantilevers) SiN resonators extracted from literature, suggesting surface loss as ubiquitous damping mechanism in thin SiN resonators with Qsurf=βh and β=6×1010±4×1010  m−1. Based on the intrinsic loss the maximal achievable Qs and Qf products for SiN membranes and strings are outlined....

  12. Effect of air-exposed biocathode on the performance of a Thauera-dominated membraneless single-chamber microbial fuel cell (SCMFC).

    Science.gov (United States)

    Yang, Nuan; Zhan, Guoqiang; Wu, Tingting; Zhang, Yanyan; Jiang, Qinrui; Li, Daping; Xiang, Yuanying

    2018-04-01

    To investigate the effect of air-exposed biocathode (AEB) on the performance of single-chamber microbial fuel cell (SCMFC), wastewater quality, bioelectrochemical characteristics and the electrode biofilms were researched. It was demonstrated that exposing the biocathode to air was beneficial to nitrogen removal and current generation. In Test 1 of 95% AEB, removal rates of ammonia, total nitrogen (TN) and chemical oxygen demand (COD) reached 99.34%±0.11%, 99.34%±0.10% and 90.79%±0.12%, respectively. The nitrogen removal loading rates were 36.38gN/m 3 /day. Meanwhile, current density and power density obtained at 0.7A/m 3 and 104mW/m 3 respectively. Further experiments on open-circuit (Test 2) and carbon source (Test 3) indicated that this high performance could be attributed to simultaneous biological nitrification/denitrification and aerobic denitrification, as well as bioelectrochemical denitrification. Results of community analysis demonstrated that both microbial community structures on the surface of the cathode and in the liquid of the chamber were different. The percentage of Thauera, identified as denitrifying bacteria, maintained at a high level of over 50% in water, but decreased gradually in the AEB. Moreover, the genus Nitrosomonas, Alishewanella, Arcobacter and Rheinheimera were significantly enriched in the AEB, which might contribute to both enhancement of nitrogen removal and electricity generation. Copyright © 2017. Published by Elsevier B.V.

  13. D2 dissociative adsorption on and associative desorption from Si(100): Dynamic consequences of an ab initio potential energy surface

    DEFF Research Database (Denmark)

    Luntz, A. C.; Kratzer, Peter

    1996-01-01

    favors the symmetric one. Under the conditions of many experiments, either could dominate. The calculations show quite weak dynamic coupling to the Si lattice for both paths, i.e., weak surface temperature dependences to dissociation and small energy loss to the lattice upon desorption......Dynamical calculations are reported for D-2 dissociative chemisorption on and associative desorption from a Si(100) surface. These calculations use the dynamically relevant effective potential which is based on an ab initio potential energy surface for the ''pre-paired'' species. Three coordinates...

  14. Surface passivation of nano-textured fluorescent SiC by atomic layer deposited TiO2

    DEFF Research Database (Denmark)

    Lu, Weifang; Ou, Yiyu; Jokubavicius, Valdas

    2016-01-01

    Nano-textured surfaces have played a key role in optoelectronic materials to enhance the light extraction efficiency. In this work, morphology and optical properties of nano-textured SiC covered with atomic layer deposited (ALD) TiO2 were investigated. In order to obtain a high quality surface...

  15. Buffer-eliminated, charge-neutral epitaxial graphene on oxidized 4H-SiC (0001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Sirikumara, Hansika I., E-mail: hansi.sirikumara@siu.edu; Jayasekera, Thushari, E-mail: thushari@siu.edu [Department of Physics, Southern Illinois University, Carbondale, Illinois 62901 (United States)

    2016-06-07

    Buffer-eliminated, charge-neutral epitaxial graphene (EG) is important to enhance its potential in device applications. Using the first principles Density Functional Theory calculations, we investigated the effect of oxidation on the electronic and structural properties of EG on 4H-SiC (0001) surface. Our investigation reveals that the buffer layer decouples from the substrate in the presence of both silicate and silicon oxy-nitride at the interface, and the resultant monolayer EG is charge-neutral in both cases. The interface at 4H-SiC/silicate/EG is characterized by surface dangling electrons, which opens up another route for further engineering EG on 4H-SiC. Dangling electron-free 4H-SiC/silicon oxy-nitride/EG is ideal for achieving charge-neutral EG.

  16. Nanopatterning on silicon surface using atomic force microscopy with diamond-like carbon (DLC-coated Si probe

    Directory of Open Access Journals (Sweden)

    Zhou Jingfang

    2011-01-01

    Full Text Available Abstract Atomic force microscope (AFM equipped with diamond-like carbon (DLC-coated Si probe has been used for scratch nanolithography on Si surfaces. The effect of scratch direction, applied tip force, scratch speed, and number of scratches on the size of the scratched geometry has been investigated. The size of the groove differs with scratch direction, which increases with the applied tip force and number of scratches but decreases slightly with scratch speed. Complex nanostructures of arrays of parallel lines and square arrays are further fabricated uniformly and precisely on Si substrates at relatively high scratch speed. DLC-coated Si probe has the potential to be an alternative in AFM-based scratch nanofabrication on hard surfaces.

  17. Real-time monitoring of initial thermal oxidation on Si(001) surfaces by synchrotron radiation photoemission spectroscopy

    CERN Document Server

    Yoshigoe, A; Teraoka, Y

    2003-01-01

    The thermal oxidation of Si(001) surfaces at 860 K, 895 K, 945 K and 1000 K under the O sub 2 pressure of 1 x 10 sup - sup 4 Pa has been investigated by time-resolved photoemission measurements with synchrotron radiation. Based on time evolution analyses by reaction kinetics models, it was found that the oxidation at 860 K, 895 K and 945 K has progressed with the Langmuir adsorption type, whereas the oxidation at 1000 K has showed the character of the two-dimensional island growth involving SiO desorption. The oxidation rates increases with increasing surface temperature in the passive oxidation condition. The time evolution of each Si oxidation state (Si sup n sup + : n = 1, 2, 3, 4) derived from the Si-2p core-level shifts has also been analyzed. The results revealed that the thermal energy contribution to the migration process of the adsorbed oxygen and the emission of the bulk silicon atoms. Thus, the fraction of the Si sup 4 sup + bonding state, i.e. SiO sub 2 structure, was increased. (author)

  18. Ab initio study of the adsorption of antimony and arsenic on the Si(110) surface

    International Nuclear Information System (INIS)

    Huitzil-Tepanecatl, Arely; Cocoletzi, Gregorio H.; Takeuchi, Noboru

    2010-01-01

    We have performed first principles total energy calculations to investigate the adsorption of Sb and As adatoms on the Si(110) surface using a (2 x 3) supercell. The energetics and atomic structures have been investigated in four atomic configurations. One structure is obtained by placing 1/3 of a monolayer (ML) of Sb (As) atoms on the Si(110) surface. The other three geometries are obtained by depositing 1 ML of Sb (As) atoms on the surface. In the first case the structure is formed by four trimers, in the second case the geometry is formed by zigzag atomic chains and in the third case the structure contains 'microfacets'. The energetics results of the Sb adsorption show that for low coverage the tetrahedrons formed by the adsorption of 1/3 ML is the most stable configuration, while in the monolayer region the zigzag atomic chain is the most stable structure. However, the total energies of the trimer and microfacet structures are slightly higher, indicating that under some conditions, they may be formed. In an experimental report it has been suggested that the adsorption of 1/3 and 1 ML of Sb corresponds to the low and high coverage in the experiments of Zotov et al. [A. V. Zotov, V. G. Lifshifts, and A. N. Demidchik, Surf. Sci. 274, L583 (1992)]. On the other hand, our results of the As adsorption show that for low coverage, the tetrahedrons in the adsorption of 1/3 ML also give the most stable configuration. However, at the 1 ML coverage, a structure formed by microfacets is the most stable structure, in agreement with previous results.

  19. Ab initio study of the adsorption of antimony and arsenic on the Si(110) surface

    Energy Technology Data Exchange (ETDEWEB)

    Huitzil-Tepanecatl, Arely [Postgrado en Fisica Aplicada, Facultad de Ciencias Fisico-Matematicas, BUAP, Apartado Postal 52, Puebla 72000 (Mexico); Cocoletzi, Gregorio H., E-mail: cocoletz@sirio.ifuap.buap.m [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Km. 107 Carretera Tijuana-Ensenada, Codigo Postal 22860, Apartado Postal 2732 Ensenada, Baja California (Mexico); Centro de Nanociencia y Nanotecnologia, Universidad Nacional Autonoma de Mexico, Apartado Postal 2681, Ensenada, Baja California, 22800 (Mexico); Instituto de Fisica, Universidad Autonoma de Puebla, Apartado Postal J-48, Puebla 72570 (Mexico); Takeuchi, Noboru [Centro de Nanociencia y Nanotecnologia, Universidad Nacional Autonoma de Mexico, Apartado Postal 2681, Ensenada, Baja California, 22800 (Mexico)

    2010-10-29

    We have performed first principles total energy calculations to investigate the adsorption of Sb and As adatoms on the Si(110) surface using a (2 x 3) supercell. The energetics and atomic structures have been investigated in four atomic configurations. One structure is obtained by placing 1/3 of a monolayer (ML) of Sb (As) atoms on the Si(110) surface. The other three geometries are obtained by depositing 1 ML of Sb (As) atoms on the surface. In the first case the structure is formed by four trimers, in the second case the geometry is formed by zigzag atomic chains and in the third case the structure contains 'microfacets'. The energetics results of the Sb adsorption show that for low coverage the tetrahedrons formed by the adsorption of 1/3 ML is the most stable configuration, while in the monolayer region the zigzag atomic chain is the most stable structure. However, the total energies of the trimer and microfacet structures are slightly higher, indicating that under some conditions, they may be formed. In an experimental report it has been suggested that the adsorption of 1/3 and 1 ML of Sb corresponds to the low and high coverage in the experiments of Zotov et al. [A. V. Zotov, V. G. Lifshifts, and A. N. Demidchik, Surf. Sci. 274, L583 (1992)]. On the other hand, our results of the As adsorption show that for low coverage, the tetrahedrons in the adsorption of 1/3 ML also give the most stable configuration. However, at the 1 ML coverage, a structure formed by microfacets is the most stable structure, in agreement with previous results.

  20. Core-shell Si/Cu nanocomposites synthesized by self-limiting surface reaction as anodes for lithium ion batteries

    Science.gov (United States)

    Xu, Kaiqi; Zhang, Zhizhen; Su, Wei; Huang, Xuejie

    Core-shell Si/Cu nanocomposites were synthesized via a flexible self-limiting surface reaction without extra reductant for the first time. The nano Si was uniformly coated with Cu nanoparticles with a diameter of 5-10nm, which can enhance the electronic conductivity of the nanocomposites and buffer the huge volume change during charge/discharge owing to its high ductility. Benefited from the unique structure, the Si/Cu nanocomposites exhibited a good electrochemical performance as anodes for lithium ion batteries, which exhibited a capacity retention of 656mAh/g after 50 cycles and a coulombic efficiency of more than 99%.

  1. Topographical characterization of Ar-bombarded Si(1 1 1) surfaces by atomic force microscopy

    CERN Document Server

    Niebieskikwiat, D G; Pregliasco, G R; Gayone, J E; Grizzi, O; Sanchez, E A

    2002-01-01

    We used atomic force microscopy to study the topographical changes induced on Si(1 1 1) surfaces by 10-22 keV Ar sup + bombardment. The irradiation was carried on normal to the surface with doses in the 1-60x10 sup 1 sup 6 ions/cm sup 2 range. We observed a first generation of blisters at a critical dose around 3x10 sup 1 sup 6 ions/cm sup 2 , which flakes off at 19x10 sup 1 sup 6 ions/cm sup 2 , and a second generation of smaller blisters between 35 and 45x10 sup 1 sup 6 ions/cm sup 2. Measurements of the mean surface height show that at low irradiation doses the surface inflates because of voids produced by Ar sup + implantation. For doses greater than 20x10 sup 1 sup 6 Ar sup + /cm sup 2 the height decreases linearly because of sputtering, with a slope corresponding to a sputtering yield of 1.4. Finally, we present electron spectra produced during grazing proton bombardment of samples whose topography has been modified by Ar irradiation.

  2. Potential sputtering of protons from hydrogen- and H sub 2 O-terminated Si(1 0 0) surfaces with slow highly charged ions

    CERN Document Server

    Kuroki, K; Yamazaki, Y

    2003-01-01

    A potential sputtering mechanism of hydrogen has been studied for impacts of slow highly charged Xe sup q sup + ions (<5 keV, q=4-12) on well-defined H-terminated and water-saturated Si(1 0 0) surfaces. It was found that the sputtering yields of protons were proportional to q supgamma (gamma approx 5) for both the Si(1 0 0)2x1-H and Si(1 0 0)1x1-H surfaces, although the absolute yield for the Si(1 0 0)1x1-H surface was 10 times larger than that for the Si(1 0 0)2x1-H surface, i.e. the sputtering efficiency per one H-Si bond for the Si(1 0 0)1x1-H surface is five times larger that for the Si(1 0 0)2x1-H surface. The proton sputtering efficiency from a H-O-Si bond was extracted from measurements of the water-saturated surface, which was approx 8 times larger than the H-Si bond of the Si(1 0 0)2x1-H surface. An effective distance of the proton from its substrate was proposed to be the key parameter to govern the yield, which also influences the energy distributions of sputtered protons. These findings are con...

  3. Effect of La surface treatments on corrosion resistance of A3xx.x/SiCp composites in salt fog

    International Nuclear Information System (INIS)

    Pardo, A.; Merino, M.C.; Arrabal, R.; Merino, S.; Viejo, F.; Coy, A.E.

    2006-01-01

    The influence of the SiC p proportion and the matrix concentration of four aluminium metal matrix composites (A360/SiC/10p, A360/SiC/20p, A380/SiC/10p, A380/SiC/20p) modified by lanthanum-based conversion or electrolysis coating was evaluated in neutral salt fog according to ASTM B 117. Lanthanum-based conversion coatings were obtained by immersion in 50 deg. C solution of La(III) salt and lanthanum electrolysis treatments were performed in ethylene glycol mono-butyl ether solution. These treatments preferentially covered cathodic areas such as intermetallic compounds, Si eutectic and SiC p . The kinetic of the corrosion process was studied on the basis of gravimetric tests. Both coating microstructure and nature of corrosion products were analyzed by scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDS) and low angle X-ray diffraction (XRD) before and after accelerated testing to determine the influence of microstructural changes on corrosion behaviour during exposure to the corrosive environment. The corrosion process was more influenced by the concentration of alloy elements in the matrix than by the proportion of SiC p reinforcement. Both conversion and electrolysis surface treatments improved the behaviour to salt fog corrosion in comparison with original composites without treatment. Additionally, electrolysis provided a higher degree of protection than the conversion treatment because the coating was more extensive

  4. Properties of the c-Si/Al2O3 interface of ultrathin atomic layer deposited Al2O3 layers capped by SiNx for c-Si surface passivation

    Science.gov (United States)

    Schuldis, D.; Richter, A.; Benick, J.; Saint-Cast, P.; Hermle, M.; Glunz, S. W.

    2014-12-01

    This work presents a detailed study of c-Si/Al2O3 interfaces of ultrathin Al2O3 layers deposited with atomic layer deposition (ALD), and capped with SiNx layers deposited with plasma-enhanced chemical vapor deposition. A special focus was the characterization of the fixed charge density of these dielectric stacks and the interface defect density as a function of the Al2O3 layer thickness for different ALD Al2O3 deposition processes (plasma-assisted ALD and thermal ALD) and different thermal post-deposition treatments. Based on theoretical calculations with the extended Shockley-Read-Hall model for surface recombination, these interface properties were found to explain well the experimentally determined surface recombination. Thus, these interface properties provide fundamental insights into to the passivation mechanisms of these Al2O3/SiNx stacks, a stack system highly relevant, particularly for high efficiency silicon solar cells. Based on these findings, it was also possible to improve the surface passivation quality of stacks with thermal ALD Al2O3 by oxidizing the c-Si surface prior to the Al2O3 deposition.

  5. AlSiTiN and AlSiCrN multilayer coatings: Effects of structure and surface composition on tribological behavior under dry and lubricated conditions

    Science.gov (United States)

    Faga, Maria Giulia; Gautier, Giovanna; Cartasegna, Federico; Priarone, Paolo C.; Settineri, Luca

    2016-03-01

    Nanocomposite coatings have been widely studied over the last years because of their high potential in several applications. The increased interest for these coatings prompted the authors to study the tribological properties of two nanocomposites under dry and lubricated conditions (applying typical MQL media), in order to assess the influence of the surface and bulk properties on friction evolution. To this purpose, multilayer and nanocomposite AlSiTiN and AlSiCrN coatings were deposited onto tungsten carbide-cobalt (WC-Co) samples. Uncoated WC-Co materials were used as reference. Coatings were analyzed in terms of hardness and adhesion. The structure of the samples was assessed by X-ray diffraction (XRD), while the surface composition was studied by XPS analysis. Friction tests were carried out under both dry and lubricated conditions using an inox ball as counterpart. Both coatings showed high hardness and good adhesion to the substrate. As far as the friction properties are concerned, in dry conditions the surface properties affect the sliding contact at the early beginning, while bulk structure and tribolayer formation determine the main behavior. Only AlSiTiN coating shows a low and stable coefficient of friction (COF) under dry condition, while the use of MQL media results in a rapid stabilization of the COF for all the materials.

  6. Surface and magnetic characteristics of Ni-Mn-Ga/Si (100) thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S. Vinodh; Pandyan, R. Kodi; Mahendran, M., E-mail: manickam-mahendran@tce.edu, E-mail: perialangulam@gmail.com [Smart Materials Lab, Department of Physics, Thiagarajar College of Engineering, Madurai – 625 015 (India); Raja, M. Manivel [Defence Metallurgical Research Laboratory, Hyderabad – 500 058 (India); Pandi, R. Senthur [School of Advanced Sciences, VIT University, Vellore – 632 014 (India)

    2016-05-23

    Polycrystalline Ni-Mn-Ga thin films have been deposited on Si (100) substrate with different film thickness. The influence of film thickness on the phase structure and magnetic domain of the films has been examined by scanning electron microscope, atomic force microscopy and magnetic force microscopy. Analysis of structural parameters indicates that the film at lower thickness exhibits the coexistence of both austenite and martensite phase, whereas at higher thickness L1{sub 2} cubic non magnetic phase is noticed. The grains size and the surface roughness increase along with the film thickness and attain the maximum of 45 nm and 34.96 nm, respectively. At lower film thickness, the magnetic stripe domain is found like maze pattern with dark and bright images, while at higher thickness the absence of stripe domains is observed. The magnetic results reveal that the films strongly depend on their phase structure and microstructure which influence by the film thickness.

  7. Immobilization of simulated reducing agent at the surface of SiO2 fillers in dental composite resins.

    Science.gov (United States)

    Shibata, Satoki; Hirata, Isao; Nomura, Yuji; Shirai, Kenichi; Fujitani, Morioki; Shintani, Hideaki; Okazaki, Masayuki

    2007-07-01

    To reduce the leachability of reducing agents from composite resins, immobilization of a simulated reducing agent at the surface of SiO2 fillers was examined. SiO2 plates were immersed in 2% 3-aminopropyltriethoxy silane/ethanol solution, and then immersed in dimethyl sulfoxide with 0.25 wt% 4-dimethyl amino benzoic acid (DMABA), 2.0 wt% 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide hydrochloride, and 0.5 wt% N-hydroxysuccinimide. Wide-scan spectrum of X-ray photoelectron spectroscopy did not detect carbon contamination. However, narrow scan detected an O=C-N peak at 399.8 eV, suggesting that DMABA could be immobilized on silane-coupled SiO2 plates. Further, surface plasmon resonance analysis indicated the adsorption of MMA at the surface of reducing agent-immobilized plate.

  8. Site-specific Pt deposition and etching on electrically and thermally isolated SiO2 micro-disk surfaces

    International Nuclear Information System (INIS)

    Saraf, Laxmikant V

    2010-01-01

    Electrically and thermally isolated surfaces are crucial for improving the detection sensitivity of microelectronic sensors. The site-specific in situ growth of Pt nano-rods on thermally and electrically isolated SiO 2 micro-disks using wet chemical etching and a focused ion/electron dual beam (FIB-SEM) is demonstrated. Fabrication of an array of micro-cavities on top of a micro-disk is also demonstrated. The FIB source is utilized to fabricate through-holes in the micro-disks. Due to the amorphous nature of SiO 2 micro-disks, the Ga implantation possibly modifies through-hole sidewall surface chemistry rather than affecting its transport properties. Some sensor design concepts based on micro-fabrication of SiO 2 micro-disks utilizing thermally and electrically isolated surfaces are discussed from the viewpoint of applications in photonics and bio-sensing.

  9. Influence of surface oxidation on the radiative properties of ZrB{sub 2}-SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Li, Ning, E-mail: lncaep@163.com [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang, 621900 (China); Xing, Pifeng; Li, Cui [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang, 621900 (China); Wang, Peng [School of Material Science and Engineering, Shandong University of Technology, Zibo 255049 (China); Jin, Xinxin [College of Materials Science and Engineering, Harbin University of Science and Technology, Harbin 150040 (China); Zhang, Xinghong [Science and Technology on Advanced Composites in Special Environments Laboratory, Harbin Institute of Technology, Harbin 150001 (China)

    2017-07-01

    Highlights: • Surface component affected radiative properties of ZrB{sub 2}-SiC composites significantly. • Emissivity in long-wave range gradually increased with the thickness of oxide scale. • The surface temperature had a little effect on radiative properties of composites. • Influence of surface roughness on emissivity could be negligible. • Covering the surface with glass is a method for improving radiative properties. - Abstract: The spectral emissivities of ZrB{sub 2}-20 vol.% SiC composites with various surface components of ZrB{sub 2}/SiC (ZS1), silica-rich glass (ZS2) and porous zirconia (ZS3) were measured using infrared spectrometer in the wavelength range from 2.5 to 25.0 μm. The relationship between surface oxidation (associated with surface component, thickness of oxide scale, testing temperature as well as roughness) and the radiative properties of ZrB{sub 2}-SiC composites were investigated systematically. Surface component affected the radiative properties of composites significantly. The total emissivity of ZS1 varied from 0.22 to 0.81 accompanied with surface oxidation in the temperature range 300–900 °C. The emissivity of ZS2 was about 1.5 times as that of ZS3 under the same testing conditions. The oxide scale on specimen surface enhanced the radiative properties especially in terms of short-wave range, and the emissivity in the long-wave range gradually increased with the thickness of oxide scale within a certain range. The influence of testing temperature and surface roughness was also investigated. The testing temperature had a little effect on radiative properties, whereas effect of surface roughness could be negligible.

  10. Electrophoretic Deposition of Cu-SiO2 Coatings by DC and Pulsed DC for Enhanced Surface-Mechanical Properties

    Science.gov (United States)

    Maharana, H. S.; Lakra, Suprabha; Pal, S.; Basu, A.

    2016-01-01

    The present study explored the possibilities of improvement in the surface-mechanical properties of electrodeposited Cu-SiO2 composite coating and its underlying mechanism. Composite coatings were developed using SiO2-dispersed acidic copper sulfate electrolyte by direct current and pulse-current electro-codeposition techniques with variation of pulse frequencies at a fixed duty cycle. X-ray diffraction analysis of the coatings revealed information regarding the presence of various phases and crystallographic orientations of the deposited Cu matrix. Scanning electron microscopy and energy dispersive x-ray spectroscopy techniques were used to investigate the surface morphology and chemical composition of the coatings, respectively, and it was observed that SiO2 particles were uniformly distributed in the composite coatings. Surface roughness was found to be reduced with the increasing pulse frequency. The Vickers microhardness and ball-on-plate wear study showed improvement in surface-mechanical properties due to the formation of fine Cu matrix, dispersion strengthening due to homogeneously distributed SiO2 particles, and the preferred orientation of the Cu matrix. Marginal decrease in electrical conductivity with the increasing SiO2 content and pulse frequency was observed from the four-probe electrical conductivity measurement technique.

  11. ZnO nanocrystals on SiO2/Si surfaces thermally cleaned in ultrahigh vacuum and characterized using spectroscopic photoemission and low energy electron microscopy

    International Nuclear Information System (INIS)

    Ericsson, Leif K. E.; Magnusson, Kjell O.; Zakharov, Alexei A.

    2010-01-01

    Thermal cleaning in ultrahigh vacuum of ZnO nanocrystals distributed on SiO 2 /Si surfaces has been studied using spectroscopic photoemission and low energy electron microscopy (SPELEEM). This study thus concern weakly bound ZnO nanocrystals covering only 5%-10% of the substrate. Chemical properties, crystallinity, and distribution of nanocrystals are used to correlate images acquired with the different techniques showing excellent correspondence. The nanocrystals are shown to be clean enough after thermal cleaning at 650 deg. C to be imaged by LEEM and x-ray PEEM as well as chemically analyzed by site selective x-ray photoelectron spectroscopy (μ-XPS). μ-XPS shows a sharp Zn 3d peak and resolve differences in O 1s states in oxides. The strong LEEM reflections together with the obtained chemical information indicates that the ZnO nanocrystals were thermally cleaned, but do not indicate any decomposition of the nanocrystals. μ-XPS was also used to determine the thickness of SiO 2 on Si. This article is the first to our knowledge where the versatile technique SPELEEM has been used to characterize ZnO nanocrystals.

  12. Fabrication of Si surface pattern by Ar beam irradiation and annealing method

    International Nuclear Information System (INIS)

    Zhang, J.; Momota, S.; Maeda, K.; Terauchi, H.; Furuta, M.; Kawaharamura, T.; Nitta, N.; Wang, D.

    2012-01-01

    The fabrication process of crater structures on Si crystal has been studied by an irradiation of Ar beam and a thermal annealing at 600 °C. The fabricated surface was measured by field emission scanning electron microscope and atomic force microscope. The results have shown the controllability of specifications of crater formation such as density, diameter and depth by changing two irradiation parameters, fluence and energy of Ar ions. By changing the fluence over a range of 1 ∼ 10 × 10 16 /cm 2 , we could control a density of crater 0 ∼ 39 counts/100μm 2 . By changing the energy over a range of 90 ∼ 270 keV, we could control a diameter and a depth of crater in 0.8 ∼ 4.1μm and 99 ∼ 229nm, respectively. The present result is consistent with the previously proposed model that the crater structure would be arising from an exfoliated surface layer of silicon. The present result has indicated the possibility of the crater production phenomena as a hopeful method to fabricate the surface pattern on a micro-nano meter scale.

  13. Potassium ions in SiO2: electrets for silicon surface passivation

    Science.gov (United States)

    Bonilla, Ruy S.; Wilshaw, Peter R.

    2018-01-01

    This manuscript reports an experimental and theoretical study of the transport of potassium ions in thin silicon dioxide films. While alkali contamination was largely researched in the context of MOSFET instability, recent reports indicate that potassium ions can be embedded into oxide films to produce dielectric materials with permanent electric charge, also known as electrets. These electrets are integral to a number of applications, including the passivation of silicon surfaces for optoelectronic devices. In this work, electric field assisted migration of ions is used to rapidly drive K+ into SiO2 and produce effective passivation of silicon surfaces. Charge concentrations of up to ~5  ×  1012 e cm‑2 have been achieved. This charge was seen to be stable for over 1500 d, with decay time constants as high as 17 000 d, producing an effectively passivated oxide–silicon interface with SRV  <  7 cm s‑1, in 1 Ω cm n-type material. This level of charge stability and passivation effectiveness has not been previously reported. Overall, this is a new and promising methodology to enhance surface passivation for the industrial manufacture of silicon optoelectronic devices.

  14. Ab initio investigation of the passivation effect of the acrylonitrile molecule on the Si(100)-(2 × 1) surface

    Energy Technology Data Exchange (ETDEWEB)

    Usanmaz, D., E-mail: demetusanmaz@gmail.com [Physics Program, Middle East Technical University, Northern Cyprus Campus, Kalkanlı, Güzelyurt, KKTC, Mersin 10 (Turkey); Srivastava, G.P. [School of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL (United Kingdom)

    2014-08-17

    Highlights: • Different bonding configurations of acrylonitrile molecule on the Si(2 × 1) surface based on reported experimental results have been investigated. • The acrylonitrile molecule has the minimum energy configuration at the on-top adsorption site. • The adsorption of the acrylonitrile molecule passivates the Si(2 × 1) surface both chemically as well as electronically. • The resulting surface structure is passivated both chemically as well as electronically. - Abstract: Based on pseudopotentials and the density functional theory, we have investigated the atomic geometry and electronic structure of the acrylonitrile molecule adsorbed on the Si(100)-(2 × 1) surface. By considering different bonding configurations based on reported experimental results, we have investigated several possible geometries. Our total energy results suggest that the acrylonitrile molecule has the minimum energy configuration at the on-top adsorbtion site. The electronic surface properties of the most stable structure have been discussed. Our results show that the adsorption of this molecule fully passivates the Si(001)(2 × 1) surface.

  15. Tailoring the nickel nanoparticles anchored on the surface of Fe3O4@SiO2 spheres for nanocatalysis

    Science.gov (United States)

    Ding, Lei; Zhang, Min; Zhang, Yanwei; Yang, Jinbo; Zheng, Jing; Hayat, Tasawar; Alharbi, Njud S.; Xu, Jingli

    2017-08-01

    Herein, we report an efficient and universal strategy for synthesizing a unique triple-shell structured Fe3O4@SiO2@C-Ni hybrid composite. Firstly, the Fe3O4 cores were synthesized by hydrothermal reaction, and sequentially coated with SiO2 and a thin layer of nickel-ion-doped resin-formaldehyde (RF-Ni2+) using an extended Stöber method. This was followed by carbonization to produce the Fe3O4@SiO2@C-Ni nanocomposites with metallic nickel nanoparticles embedded in an RF-derived thin graphic carbon layer. Interestingly, the thin SiO2 spacer layer between RF-Ni2+ and Fe3O4 plays a critical role on adjusting the size and density of the nickel nanoparticles on the surface of Fe3O4@SiO2 nanospheres. The detailed tailoring mechanism is explicitly discussed, and it is shown that the iron oxide core can react with the nickel nanoparticles without the SiO2 spacer layer, and the size and density of the nickel nanoparticles can be effectively controlled when the SiO2 layer exits. The multifunctional composites exhibit a significantly enhanced catalytic performance in the reduction of 4-nitrophenol (4-NP).

  16. Ab initio potential energy surface and vibration-rotation energy levels of silicon dicarbide, SiC2.

    Science.gov (United States)

    Koput, Jacek

    2016-10-05

    The accurate ground-state potential energy surface of silicon dicarbide, SiC2 , has been determined from ab initio calculations using the coupled-cluster approach. Results obtained with the conventional and explicitly correlated coupled-cluster methods were compared. The core-electron correlation, higher-order valence-electron correlation, and scalar relativistic effects were taken into account. The potential energy barrier to the linear SiCC configuration was predicted to be 1782 cm(-1) . The vibration-rotation energy levels of the SiC2 , (29) SiC2 , (30) SiC2 , and SiC(13) C isotopologues were calculated using a variational method. The experimental vibration-rotation energy levels of the main isotopologue were reproduced to high accuracy. In particular, the experimental energy levels of the highly anharmonic vibrational ν3 mode of SiC2 were reproduced to within 6.7 cm(-1) , up to as high as the v3  = 16 state. © 2016 Wiley Periodicals, Inc.

  17. Two-dimensional Ag/SiO2 and Cu/SiO2 nanocomposite surface-relief grating couplers and their vertical input coupling properties

    Science.gov (United States)

    Wang, Jun; Mu, Xiaoyu; Wang, Gang; Liu, Changlong

    2017-11-01

    By etching two SiO2 optical waveguide slabs separately implanted with 90 keV Ag ions and 60 keV Cu ions at the same dose of 6 × 1016 cm-2, two-dimensional Ag/SiO2 and Cu/SiO2 nanocomposite surface-relief grating couplers with 600-nm periodicity and 100-nm thickness were fabricated, and their structural and vertical input coupling properties were investigated. Experimental results revealed that the two couplers could convert light beams at wavelengths of 620-880 nm into guided waves with different efficiencies, highlighting the special importance of metal nanoparticles (NPs). Further discussions also revealed that owing to the introduction of periodically distributed metal NPs, the periodical phase modification of the transmitted beam was enhanced drastically, and the nanocomposite veins could behave as efficient light scatterers. As a result, the two couplers were much larger in coupling efficiency than the NP-free one with identical morphological parameters. The above findings may be useful to construct thin and short but efficient surface-relief grating couplers on glass optical waveguides.

  18. Influence of SiO2/Al2O3 Molar Ratio on Phase Composition and Surfaces Quality of Aluminum Silicate Sanitary Glazes in the SiO2-Al2O3-CaO-Na2O System

    Directory of Open Access Journals (Sweden)

    Leśniak M.

    2016-12-01

    Full Text Available This paper presents the results of research on aluminum silicate sanitary glazes in the SiO2-Al2O3-CaO-Na2O system with different SiO2/Al2O3 molar ratio. XRD, SEM-EDS and FITR measurement indicated that SiO2/Al2O3 molar ratio has a significant impact on the phase composition of the obtained glazes. Glass-ceramic glazes were obtained that consisted of both the glass phase and pseudowollastonite (Ca3[SiO3]3 or anorthite (Ca[Al2Si2O8] crystals. Subsequently, the influence of phase composition on surface quality (roughness was examined for the obtained samples. On the basis of the conducted examination of glaze surface roughness was observed that glazes of extreme SiO2/Al2O3 molar ratio are characterized with greatest surface roughness when compared to other glazes.

  19. Experimental investigation on densification behavior and surface roughness of AlSi10Mg powders produced by selective laser melting

    Science.gov (United States)

    Wang, Lin-zhi; Wang, Sen; Wu, Jiao-jiao

    2017-11-01

    Effects of laser energy density (LED) on densities and surface roughness of AlSi10Mg samples processed by selective laser melting were studied. The densification behaviors of the SLM manufactured AlSi10Mg samples at different LEDs were characterized by a solid densitometer, an industrial X-ray and CT detection system. A field emission scanning electron microscope, an automatic optical measuring system, and a surface profiler were used for measurements of surface roughness. The results show that relatively high density can be obtained with the point distance of 80-105 μm and the exposure time of 140-160 μs. The LED has an important influence on the surface morphology of the forming part, too high LED may lead to balling effect, while too low LED tends to produce defects, such as porosity and microcrack, and then affect surface roughness and porosities of the parts finally.

  20. High-resolution, high-linearity temperature sensor using surface acoustic wave device based on LiNbO3/SiO2/Si substrate

    Directory of Open Access Journals (Sweden)

    Xiang-Guang Tian

    2016-09-01

    Full Text Available A high-resolution and high-linearity surface acoustic wave (SAW temperature sensor, consisting of a SAW resonator device fabricated on novel X-cut LiNbO3/SiO2/Si piezoelectric substrate and a resonance frequency readout chip using standard 180 nm CMOS technology, is presented for the first time. High temperature performance substrate LiNbO3/SiO2/Si is prepared mainly by ion implantation and wafer bonding at first. RF SAW device with resonance frequency near 900 MHz is designed and fabricated on the substrate. Traditional probe method using network analyzer and the readout chip method are both implemented to characterize the fabricated SAW device. Further measurement of temperature using resonance frequency shift of SAW device demonstrates the feasibility of the combined system as a portable SAW temperature sensor. The obtained frequency-temperature relation of the fabricated device is almost linear. The frequency resolution of the readout chip is 733 Hz and the corresponding temperature accuracy is 0.016 ° C. Resolution of the sensor in this work is superior to most of the commercial temperature measurement sensors. Theory analysis and finite element simulation are also presented to prove the mechanism and validity of using SAW device for temperature detection applications. We conclude that the high-linearity frequency-temperature relation is achieved by the offset between high-order coefficients of LiNbO3 and SiO2 with opposite signs. This work offers the possibility of temperature measuring in ultra-high precision sensing and control applications.

  1. Structural And Energetic Changes of Si (100 Surface With Fluorine in Presence of Water – A Density Functional Study

    Directory of Open Access Journals (Sweden)

    Takeo Ebina

    2001-05-01

    Full Text Available Abstract: We report density functional electronic structure calculations to monitor the change in the surface characteristics of the Si (100-2x1 surface after fluorination followed by interaction with water. Embedded finite silicon clusters are used to model an extended Si (100-2x1 surface. Two high symmetry pathways and subsequent adsorption sites were examined: (i adsorption of an fluorine atom directing onto a silicon dangling bond to form a monocoordinated fluorine atom (ii adsorption of a fluorine atom directing on top of silicon dimer to form a bridging dicoordinated fluorine atom. However, in the later case we find that no barrier exists for the bridging fluorine atom to slide towards silicon dimer dangling bond to form more stable mono coordinated Si-F bond. We calculated activation barriers and equilibrium surface configuration as a function of fluorine coverage upto 2.0 ML. We compared the stability of the fluorinated surface. The results were compared with existing experimental and theoretical results. The reaction of water with HF treated Si surface is monitored. It produces, as a first step, the exchange of Si-F with water to form Si-OH groups reducing the concentration of the fluorine on the surface, followed by a rapture of Si-Si bonds and finally the Si-O-Si bridge formation in the lattice.

  2. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    International Nuclear Information System (INIS)

    Kaushik, Priya Darshni; Ivanov, Ivan G.; Lin, Pin-Cheng; Kaur, Gurpreet; Eriksson, Jens; Lakshmi, G.B.V.S.; Avasthi, D.K.; Gupta, Vinay; Aziz, Anver; Siddiqui, Azher M.; Syväjärvi, Mikael; Yazdi, G. Reza

    2017-01-01

    Highlights: • For the first time the gas sensing application of SHI irradiated epitaxial graphene on SiC is explored. • Surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles. • Existence of an optimal fluence which maximize the gas sensing response towards NO 2 and NH 3 gases. - Abstract: In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 10 13 ions/cm 2 ). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and spintronic

  3. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    Energy Technology Data Exchange (ETDEWEB)

    Kaushik, Priya Darshni, E-mail: kaushik.priyadarshni@gmail.com [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Ivanov, Ivan G.; Lin, Pin-Cheng [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Kaur, Gurpreet [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Eriksson, Jens [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Lakshmi, G.B.V.S. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Avasthi, D.K. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Amity Institute of Nanotechnology, Noida 201313 (India); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Aziz, Anver; Siddiqui, Azher M. [Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Syväjärvi, Mikael [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Yazdi, G. Reza, E-mail: yazdi@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden)

    2017-05-01

    Highlights: • For the first time the gas sensing application of SHI irradiated epitaxial graphene on SiC is explored. • Surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles. • Existence of an optimal fluence which maximize the gas sensing response towards NO{sub 2} and NH{sub 3} gases. - Abstract: In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 10{sup 13} ions/cm{sup 2}). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and

  4. Vibrational properties of the Au-(√{3 }×√{3 } )/Si(111) surface reconstruction

    Science.gov (United States)

    Halbig, B.; Liebhaber, M.; Bass, U.; Geurts, J.; Speiser, E.; Räthel, J.; Chandola, S.; Esser, N.; Krenz, M.; Neufeld, S.; Schmidt, W. G.; Sanna, S.

    2018-01-01

    The vibrational properties of the Au-induced (√{3 }×√{3 })R 30∘ reconstruction of the Si(111) surface are investigated by polarized surface Raman spectroscopy and density-functional theory. The Raman measurements are performed in situ at room temperature as well as 20 K, and they reveal the presence of vibrational eigenmodes in the spectral range from 20 to 450 cm-1. In particular, two peaks of E symmetry at 75 and 183 cm-1 dominate the spectra. No substantial difference between room- and low-temperature spectra is observed, suggesting that the system does not undergo a phase transition down to 20 K. First-principles calculations are performed based on the structural models discussed in the literature. The thermodynamically stable conjugate honeycomb-chained-trimer model (CHCT) [Surf. Sci. 275, L691 (1992), 10.1016/0039-6028(92)90785-5] leads to phonon eigenvalues compatible with the experimental observations in the investigated spectral range. On the basis of the phonon eigenfrequencies, symmetries, and Raman intensities, we assign the measured spectral features to the calculated phonon modes. The good agreement between measured and calculated modes provides a strong argument in favor of the CHCT model.

  5. Performance enhancement in a-Si:H/μc-Si:H tandem solar cells with periodic microstructured surfaces.

    Science.gov (United States)

    Shen, Xiangqian; Wang, Qingkang; Wangyang, Peihua; Huang, Kun; Chen, Le; Liu, Daiming

    2015-04-01

    Here we report on an efficient light-coupling scheme with a periodic microstructured surface to enhance the performance of thin film silicon solar cells. The centerpiece of the surface structure is the hemispherical pit arrays (HPAs), which are fabricated using an inexpensive and scalable process. The integration of HPAs into micromorph tandem thin film silicon solar cells leads to superior broadband reflection suppression properties. With this design, the reflection losses of the tandem cell are reduced to only 1.5%. We demonstrate an efficiency increase from 11.67% to 12.23% compared to a conventional cell with a flat surface, with a 4.6% increase in short circuit current density. The surface microstructures reported here can be applied to a variety of photovoltaic devices to further improve their performance.

  6. Surface texturing of Si3N4–SiC ceramic tool components by pulsed laser machining

    CSIR Research Space (South Africa)

    Tshabalala, LC

    2016-03-01

    Full Text Available Article Type: Full Length Article Keywords: silicon nitride; pulsed laser machining; surface texturing; material removal; roughness Corresponding Author: Mrs. Lerato Criscelda Tshabalala, MTech Corresponding Author's Institution: Tshwane... show the material response to various laser parameters (pulse energy and pulse overlap). For this article, we only focused on profiling the material removal depth, scan width, material removal rates and the surface roughness after using two...

  7. Ethers on Si(001): A prime example for the common ground between surface science and molecular organic chemistry

    KAUST Repository

    Pecher, Lisa

    2017-09-15

    Using computational chemistry, we show that the adsorption of ether molecules on Si(001) under ultra-high vacuum conditions can be understood with textbook organic chemistry. The two-step reaction mechanism of (1) dative bond formation between the ether oxygen and a Lewis acidic surface atom and (2) a nucleophilic attack of a nearby Lewis basic surface atom is analysed in detail and found to mirror the acid-catalysed ether cleavage in solution. The O-Si dative bond is found to be the strongest of its kind and reactivity from this state defies the Bell-Evans-Polanyi principle. Electron rearrangement during the C-O bond cleavage is visualized using a newly developed bonding analysis method, which shows that the mechanism of nucleophilic substitutions on semiconductor surfaces is identical to molecular chemistry SN2 reactions. Our findings thus illustrate how the fields of surface science and molecular chemistry can mutually benefit and unexpected insight can be gained.

  8. Simple method for coating Si (1 0 0) surfaces with ferritin monolayers-Iron oxide quantum dots

    International Nuclear Information System (INIS)

    Papadopoulos, Georgios; Anetakis, Constantine; Gravalidis, Christoforos; Kassavetis, Spiros; Vouroutzis, Nikolaos; Frangis, Nikolaos; Logothetidis, Stergios

    2011-01-01

    With the goal to develop iron oxide quantum dots we developed a simple method to spread horse spleen ferritin monolayers on a Si (1 0 0) surface. Application of atomic force microscopy and spectroscopic ellipsometry showed the existence of regions with dense ferritin monolayers. Application of transmission electron microscopy identified the core of the spread ferritin as FeO nanocrystals.

  9. Controlled amino-functionalization by electrochemical reduction of bromo and nitro azobenzene layers bound to Si(111) surfaces

    NARCIS (Netherlands)

    Ullien, D.; Thüne, P.C.; Jager, W.F.; Sudhölter, E.J.R.; De Smet, L.C.P.M.

    2014-01-01

    4-Nitrobenzenediazonium (4-NBD) and 4-bromobenzenediazonium (4-BBD) salts were grafted electrochemically onto H-terminated, p-doped silicon (Si) surfaces. Atomic force microscopy (AFM) and ellipsometry experiments clearly showed layer thicknesses of 2–7 nm, which indicate multilayer formation.

  10. Effect of Pad Surface Roughness on SiO2 Removal Rate in Chemical Mechanical Polishing with Ceria Slurry

    Science.gov (United States)

    Yoshida, Masato; Ono, Hiroshi; Nishiyama, Masaya; Ashizawa, Toranosuke; Doi, Toshiro

    2006-02-01

    The effect of pad surface roughness on SiO2 removal rate was investigated using four different slurries containing ceria (CeO2) powders of different crystallite sizes and mean particle sizes. A clear maximum was observed in the dependence of removal rate on pad surface roughness. The four ceria slurries showed a peak in blanket wafer removal rate against pad surface roughness Ra. The peak moved toward larger Ra values with decreasing ceria crystallite size. The removal rate was strongly influenced not only by pad surface roughness but also by the crystallite size of ceria in the slurry.

  11. Microstructures induced by excimer laser surface melting of the SiC{sub p}/Al metal matrix composite

    Energy Technology Data Exchange (ETDEWEB)

    Qian, D.S., E-mail: Daishu.qian@postgrad.manchester.ac.uk; Zhong, X.L.; Yan, Y.Z.; Hashimoto, T.; Liu, Z.

    2017-08-01

    Highlights: • Microstructural analysis of the excimer laser-melted SiC{sub p}/AA2124;. • Analytical, FEM, and SPH simulation of the laser-material interaction;. • Mechanism of the formation of the laser-induced microstructure. - Abstract: Laser surface melting (LSM) was carried out on the SiC{sub p}/Al metal matrix composite (MMC) using a KrF excimer laser with a fluence of 7 J/cm{sup 2}. The re-solidification microstructure was characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM) equipped with energy dispersive X-ray detector, and X-ray diffraction (XRD) analysis. It was found that a 2.5 μm thick melted layer was formed in the near-surface region, in which dissolution of the intermetallics and removal of the SiC particles occurred. The thermal and material response upon laser irradiation was simulated using three models, i.e. analytical model, finite element model (FEM) and smoothed-particle hydrodynamics (SPH) model. The effect of SiC particles on the LSM process, the mechanism of the SiC removal and the re-solidification microstructures in the melted layer were discussed. The simulation results were in good agreement with the experimental results and contributed to the generic understanding of the re-solidification microstructures induced by ns-pulsed lasers.

  12. Crystalline and lattice matched Ba0.7Si0.3O layers on plane and vicinal Si(001) surfaces

    International Nuclear Information System (INIS)

    Zachariae, J.

    2006-01-01

    In this work the low temperature growth conditions of epitaxial and lattice-matched Ba 0.7 Sr 0.3 O layers on Si(100) were investigated using the combination of low energy electron diffraction (LEED), x-ray photoemission (XPS) and electron energy loss spectroscopy (EELS). With these methods crystallinity, stoichiometry and electronic structure of both occupied and unoccupied levels were studied as a function of layer thickness. Oxide layers were generated by evaporating the metals in oxygen ambient pressure with the sample at room temperature. Perfect crystallinity and lattice matching was only obtained starting with a preadsorbed monolayer (ML) of Sr or Ba at a concentration close to one monolayer. The XPS analysis shows that Ba 0.7 Sr 0.3 O as a high-K gate dielectric offers an adequate band gap, an appropriate band alignment and a atomically sharp interface to the Si(001) substrate. No silicide and silicate species, or SiO 2 formation at the interface after oxidation were found. To show that Ba 0.7 Sr 0.3 O is really appropriate to replace SiO 2 as a gate dielectric, first C-V and I-V curves of MOS-diodes with SrO, BaO and Ba 0.7 Sr 0.3 O as gateoxide were measured under ambient conditions. Besides other results, it turns out that the measured dielectric constant of Ba 0.7 Sr 0.3 O conforms with the expected value of ε ∼ 25 - 30. Exploring ways for self-organized structuring of insulating films, the possibility to produce replicas of step trains, given by a vicinal Si(001)-4 [110] surface, in layers of crystalline and perfectly lattice matched Ba 0.7 Sr 0.3 O were investigated. For this purpose high-resolution spot profile analyses in low-energy electron diffraction (SPA-LEED) both on flat Si(001) and on vicinal Si(001)-4 [110] were carried out. The G(S) analysis of these mixed oxide layers reveals a strong influence of local compositional fluctuations of Sr and Ba ions and their respective scattering phases, which appears as an unphysically large variation

  13. Thermoelectric energy conversion in layered structures with strained Ge quantum dots grown on Si surfaces

    Science.gov (United States)

    Korotchenkov, Oleg; Nadtochiy, Andriy; Kuryliuk, Vasyl; Wang, Chin-Chi; Li, Pei-Wen; Cantarero, Andres

    2014-03-01

    The efficiency of the energy conversion devices depends in many ways on the materials used and various emerging cost-effective nanomaterials have promised huge potentials in highly efficient energy conversion. Here we show that thermoelectric voltage can be enhanced by a factor of 3 using layer-cake growth of Ge quantum dots through thermal oxidation of SiGe layers stacked in SiO2/Si3N4 multilayer structure. The key to achieving this behavior has been to strain the Ge/Si interface by Ge dots migrating to Si substrate. Calculations taking into account the carrier trapping in the dot with a quantum transmission into the neighboring dot show satisfactory agreement with experiments above ≈200 K. The results may be of interest for improving the functionality of thermoelectric devices based on Ge/Si.

  14. Development of Ge/NbSi detectors for EDELWEISS-II with identification of near-surface events

    International Nuclear Information System (INIS)

    Juillard, A.; Marnieros, S.; Dolgorouky, Y.; Berge, L.; Collin, S.; Fiorucci, S.; Lalu, F.; Dumoulin, L.

    2006-01-01

    The actual limitation of Ge ionization heat cryogenic detectors for direct WIMP detection such as EDELWEISS arises from incomplete charge collection for near-surface events. We present results on Ge/NbSi detectors that are fitted with segmented electrodes and two NbSi Anderson insulator thermometric layers. Three such bolometers were studied in the low-background cryostat of the EDELWEISS collaboration in the LSM: analysis of the athermal signals allows us to identify and reject events occurring in the first millimeter under the electrodes

  15. A layered Dirac system candidate: Fermi surface and anomalous Berry phase in ZrSiSe

    Science.gov (United States)

    Chiu, Yu-Che; Chen, Kuan-Wen; Graf, David; Zhou, Qiong; Martin, Thomas J.; Chan, Julia Y.; Johannes, Michelle; Baumbach, Ryan E.; Balicas, Luis

    ZrSiSe was recently claimed to correspond to a novel type of nodal Dirac system. We synthesized single crystals through a combination of solid state reaction and chemical vapor transport. The as-grown single crystals display residual resistivities on the order of 100 nOhmcm at 2K yielding a resistivity ratio surpassing 200. Magnetoresistance (MR) measurements reveal a non-saturating increase in the resistivity by a factor of 500000% under fields up to 35 Tesla. De Haas van Alphen measurements under high magneticfields reveal a Fermi surface that is more complex than previously reported, although its geometry generally agrees with band structure calculations that indicate Dirac-like dispersion in the bulk around the Fermi energy. The charge carrier effective masses extracted from Lifshitz-Kosevich (LK) fits to the amplitude of quantum oscillations were found to range between 0.08me to 0.5me where me is the free electron mass. Fittings of the oscillatory signal to the LK formalism further reveal the existence of cyclotron orbits displaying non-trivial Berry phases approaching pi, which is consistent with the expectations from band structure calculations. funded by DOE, NSF, NHMFL.

  16. Optically abrupt localized surface plasmon resonances in si nanowires by mitigation of carrier density gradients.

    Science.gov (United States)

    Chou, Li-Wei; Boyuk, Dmitriy S; Filler, Michael A

    2015-02-24

    Spatial control of carrier density is critical for engineering and exploring the interactions of localized surface plasmon resonances (LSPRs) in nanoscale semiconductors. Here, we couple in situ infrared spectral response measurements and discrete dipole approximation (DDA) calculations to show the impact of axially graded carrier density profiles on the optical properties of mid-infrared LSPRs supported by Si nanowires synthesized by the vapor-liquid-solid technique. The region immediately adjacent to each intentionally encoded resonator (i.e., doped segment) can exhibit residual carrier densities as high as 10(20) cm(-3), which strongly modifies both near- and far-field behavior. Lowering substrate temperature during the spacer segment growth reduces this residual carrier density and results in a spectral response that is indistinguishable from nanowires with ideal, atomically abrupt carrier density profiles. Our experiments have important implications for the control of near-field plasmonic phenomena in semiconductor nanowires, and demonstrate methods for determining and controlling axial dopant profile in these systems.

  17. The technique for determination of surface contamination by uranium on U3Si2-Al plate-type fuel elements

    International Nuclear Information System (INIS)

    Li Shulan; He Fengqi; Wang Qingheng; Han Jingquan

    1993-04-01

    The NDT method for determining the surface contamination by uranium on U 3 Si 2 -Al plate-type fuel elements, the process of standard specimen preparation and the graduation curve are described. The measurement results of U 3 Si 2 -Al plate-type fuel elements show that the alpha counting method to measure the surface contamination by uranium on fuel plate is more reliable. The UB-1 type surface contamination meter, which was recently developed, has many advantages such as high sensitivity to determine the uranium pollution, short time in measuring, convenience for operation, and the minimum detectable amount of uranium is 5 x 10 -10 g/cm 2 . The measuring device is controlled by a microcomputer. Besides data acquisition and processing, it has functions of statistics, output data on terminal or to printer and alarm. The procedures of measurement are fully automatic. All of these will meet the measuring needs in batch process

  18. Novel microstructural growth in the surface of Inconel 625 by the addition of SiC under electron beam melting

    Science.gov (United States)

    Ahmad, M.; Ali, G.; Ahmed, Ejaz; Haq, M. A.; Akhter, J. I.

    2011-06-01

    Electron beam melting is being used to modify the microstructure of the surfaces of materials due to its ability to cause localized melting and supercooling of the melt. This article presents an experimental study on the surface modification of Ni-based superalloy (Inconel 625) reinforced with SiC ceramic particles under electron beam melting. Scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction techniques have been applied to characterize the resulted microstructure. The results revealed growth of novel structures like wire, rod, tubular, pyramid, bamboo and tweezers type morphologies in the modified surface. In addition to that fibrous like structure was also observed. Formation of thin carbon sheet has been found at the regions of decomposed SiC. Electron beam modified surface of Inconel 625 alloy has been hardened twice as compared to the as-received samples. Surface hardening effect may be attributed to both the formation of the novel structures as well as the introduction of Si and C atom in the lattice of Inconel 625 alloy.

  19. Mono-fluorinated alkyne-derived SAMs on oxide-free Si(111) surfaces: preparation, characterization and tuning of the Si workfunction.

    Science.gov (United States)

    Pujari, Sidharam P; van Andel, Esther; Yaffe, Omer; Cahen, David; Weidner, Tobias; van Rijn, Cees J M; Zuilhof, Han

    2013-01-15

    Organic monolayers derived from ω-fluoro-1-alkynes of varying carbon chain lengths (C(10)-C(18)) were prepared on Si(111) surfaces, resulting in changes of the physical and electronic properties of the surface. Analysis of the monolayers using XPS, Infrared Reflection Absorption Spectroscopy, ellipsometry and static water contact angle measurements provided information regarding the monolayer thickness, the tilt angle, and the surface coverage. Additionally, PCFF molecular mechanics studies were used to obtain information on the optimal packing density and the layer thickness, which were compared to the experimentally found data. From the results, it can be concluded that the monolayers derived from longer chain lengths are more ordered, possess a lower tilt angle, and have a higher surface coverage than monolayers derived from shorter chains. We also demonstrate that by substitution of an H by F atom in the terminal group, it is possible to controllably modify the surface potential and energy barrier for charge transport in a full metal/monolayer-semiconductor (MOMS) junction.

  20. Volume labeling with Alexa Fluor dyes and surface functionalization of highly sensitive fluorescent silica (SiO2) nanoparticles.

    Science.gov (United States)

    Wang, Wei; Nallathamby, Prakash D; Foster, Carmen M; Morrell-Falvey, Jennifer L; Mortensen, Ninell P; Doktycz, Mitchel J; Gu, Baohua; Retterer, Scott T

    2013-11-07

    A new synthesis approach is described that allows the direct incorporation of fluorescent labels into the volume or body of SiO2 nanoparticles. In this process, fluorescent Alexa Fluor dyes with different emission wavelengths were covalently incorporated into the SiO2 nanoparticles during their formation by the hydrolysis of tetraethoxysilane. The dye molecules were homogeneously distributed throughout the SiO2 nanoparticles. The quantum yields of the Alexa Fluor volume-labeled SiO2 nanoparticles were much higher than nanoparticles labeled using conventional organic dyes. The size of the resulting nanoparticles was controlled using microemulsion reaction media with sizes in the range of 20-100 nm and a polydispersity of <15%. In comparison with conventional surface tagged particles created by post-synthesis modification, this process maintains the physical and surface chemical properties that have the most pronounced effect on colloidal stability and interactions with their surroundings. These volume-labeled nanoparticles have proven to be extremely robust, showing excellent signal strength, negligible photobleaching, and minimal loss of functional organic components. The native or "free" surface of the volume-labeled particles can be altered to achieve a specific surface functionality without altering fluorescence. Their utility was demonstrated for visualizing the association of surface-modified fluorescent particles with cultured macrophages. Differences in particle agglomeration and cell association were clearly associated with differences in observed nanoparticle toxicity. The capacity to maintain particle fluorescence while making significant changes to surface chemistry makes these particles extremely versatile and useful for studies of particle agglomeration, uptake, and transport in environmental and biological systems.

  1. Prediction of the Strain Response of Poly-AlN/(100Si Surface Acoustic Wave Resonator and Experimental Analysis

    Directory of Open Access Journals (Sweden)

    Shuo Chen

    2016-04-01

    Full Text Available The strain sensitivity of the Aluminum Nitride (AlN/Silicon (Si surface acoustic wave resonator (SAWR is predicted based on a modeling method introduced in this work, and further compared with experimental results. The strain influence on both the period of the inter-digital transducer (IDT and the sound velocity is taken into consideration when modeling the strain response. From the modeling results, AlN and Si have opposite responses to strain; hence, for the AlN/Si-based SAWR, both a positive and a negative strain coefficient factor can be achieved by changing the thickness of the AlN layer, which is confirmed by strain response testing based on a silicon cantilever structure with two AlN configurations (1 μm and 3 μm in thickness, respectively.

  2. Prediction of the Strain Response of Poly-AlN/(100)Si Surface Acoustic Wave Resonator and Experimental Analysis.

    Science.gov (United States)

    Chen, Shuo; You, Zheng

    2016-04-27

    The strain sensitivity of the Aluminum Nitride (AlN)/Silicon (Si) surface acoustic wave resonator (SAWR) is predicted based on a modeling method introduced in this work, and further compared with experimental results. The strain influence on both the period of the inter-digital transducer (IDT) and the sound velocity is taken into consideration when modeling the strain response. From the modeling results, AlN and Si have opposite responses to strain; hence, for the AlN/Si-based SAWR, both a positive and a negative strain coefficient factor can be achieved by changing the thickness of the AlN layer, which is confirmed by strain response testing based on a silicon cantilever structure with two AlN configurations (1 μm and 3 μm in thickness, respectively).

  3. Al-Si alloy point contact formation and rear surface passivation for silicon solar cells using double layer porous silicon

    International Nuclear Information System (INIS)

    Moumni, Besma; Ben Jaballah, Abdelkader; Bessais, Brahim

    2012-01-01

    Lowering the rear surface recombination velocities by a dielectric layer has fascinating advantages compared with the standard fully covered Al back-contact silicon solar cells. In this work the passivation effect by double layer porous silicon (PS) (wide band gap) and the formation of Al-Si alloy in narrow p-type Si point contact areas for rear passivated solar cells are analysed. As revealed by Fourier transform infrared spectroscopy, we found that a thin passivating aluminum oxide (Al 2 O 3 ) layer is formed. Scanning electron microscopy analysis performed in cross sections shows that with bilayer PS, liquid Al penetrates into the openings, alloying with the Si substrate at depth and decreasing the contact resistivity. At the solar cell level, the reduction in the contact area and resistivity leads to a minimization of the fill factor losses.

  4. Reduction mechanisms of ethylene carbonate on si anodes of lithium-ion batteries: effects of degree of lithiation and nature of exposed surface.

    Science.gov (United States)

    Martinez de la Hoz, Julibeth M; Leung, Kevin; Balbuena, Perla B

    2013-12-26

    Ab initio molecular dynamics simulations are used to identify mechanisms of reduction of ethylene carbonate on Si surfaces at various degrees of lithiation, where the low-coordinated surface Si atoms are saturated with O, OH, or H functional groups. The lowest Si content surfaces are represented by quasi-amorphous LiSi4 and LiSi2; intermediate lithiation is given by LiSi crystalline facets, and the highest Li content is studied through Li13Si4 surfaces. It is found that ethylene carbonate (EC) reduction mechanisms depend significantly on the degree of lithiation of the surface. On LiSi surfaces EC is reduced according to two different two-electron mechanisms (one simultaneous and one sequential), which are independent of specific surface functionalization or nature of exposed facets. On the less lithiated surfaces, the simultaneous two-electron reduction is found more frequently. In that mechanism, the EC reduction is initiated by the formation of a C-Si bond that allows adsorption of the intact molecule to the surface and is followed by electron transfer and ring-opening. Strongly lithiated Li13Si4 surfaces are found to be highly reactive. Reduction of adsorbed EC molecules occurs via a four-electron mechanism yielding as reduction products CO(2-) and O(C2H4)O(2-). Direct transfer of two electrons to EC molecules in liquid phase is also possible, resulting in the presence of O(C2H4)OCO(2-) anions in the liquid phase.

  5. Possible scenarios for SiS formation in the interstellar medium: Electronic structure calculations of the potential energy surfaces for the reactions of the SiH radical with atomic sulphur and S2

    Science.gov (United States)

    Rosi, Marzio; Mancini, Luca; Skouteris, Dimitrios; Ceccarelli, Cecilia; Faginas Lago, Noelia; Podio, Linda; Codella, Claudio; Lefloch, Bertrand; Balucani, Nadia

    2018-03-01

    In this Letter we report on the first characterization of the reactions SiH + S and SiH + S2 by means of electronic structure calculations of the stationary points along the reactive potential energy surfaces. According to our calculations, both reactions are barrierless and can lead to the formation of SiS (a species observed in interstellar objects) for which there are no convincing formation routes in current astrochemical models. Furthermore, we have verified that SiS2 cannot be considered an interstellar reservoir of sulphur because it is easily attacked by the abundant H atoms.

  6. DEPENDENCE OF THE SURFACE-ENHANCED RAMAN SCATTERING SIGNAL ON THE SHAPE OF SILVER NANOSTRUCTURES GROWN IN THE SiO2 /n-Si POROUS TEMPLATE

    Directory of Open Access Journals (Sweden)

    D. V. Yakimchuk

    2017-01-01

    Full Text Available Surface-enhanced Raman scattering is a powerful method used in chemoand biosensorics. The aim of this work was to determine the relationship between the signal of Surface-enhanced Raman scattering and the shape of silver nanostructures under the influence of laser radiation with different power.Plasmonic nanostructures were synthesized in silicon dioxide pores on monocrystalline silicon n-type substrate. The pores were formed using ion-track technology and selective chemical etching. Silver deposition was carried out by galvanic displacement method. Synthesis time was chosen as a parameter that allows controlling the shape of a silver deposit in the pores of silicon dioxide on the surface of single-crystal n-silicon during electrodeless deposition. Deposition time directly effects on the shape of metal nanostructures.Analysis of the dynamics of changing the morphology of the metal deposit showed that as the deposition time increases, the metal evolves from individual metallic crystallites within the pores at a short deposition time to dendritic-like nanostructures at a long time. The dependence of the intensity of Surface-enhanced Raman scattering spectra on the shape of the silver deposit is studied at the powers of a green laser (λ = 532 nm from 2.5 μW to 150 μW on the model dye analyte Rodamin 6G. The optimum shape of the silver deposit and laser power is analyzed from this point of view design of active surfaces for Surface-enhanced Raman scattering with nondestructive control of small concentrations of substances.The silver nanostructures obtained in porous template SiO2 on n-type silicon substrate could be used as plasmon-active surfaces for nondestructive investigations of substances with low concentrations at low laser powers. 

  7. Thermal switching of the electrical conductivity of Si(111)(√3x√3)Ag due to a surface phase transition

    International Nuclear Information System (INIS)

    Wells, J W; Kallehauge, J F; Hofmann, Ph

    2007-01-01

    The temperature-dependent surface conductivity of the Si(111)(√3x√3)Ag surface was measured using a microscopic four-point probe. The conductivity was found to undergo a sharp increase of about three orders of magnitude when the system was heated above about 220 K. This strong conductivity change is reversible and attributed to the phase transition which is generally believed to occur on this surface. It is also shown that, in order to find the true surface conductivity, it is necessary to separate it from the contribution of the bulk and space charge layer. In this work, this is achieved by using a finite-element model. A percolating network of Ag islands on Si(111) was also studied and a much simpler behaviour (compared to that of Si(111))(√3x√3)Ag) was found. The temperature-dependent conductivity of this system was found to display typical metallic behaviour. The absolute value of the conductivity is comparable to the value expected by modelling the Ag film as exhibiting the bulk Ag transport properties

  8. Near-surface recrystallization of the amorphous implanted layer of ion implanted 6H-SiC

    Science.gov (United States)

    Kuhudzai, R. J.; van der Berg, N. G.; Malherbe, J. B.; Hlatshwayo, T. T.; Theron, C. C.; Buys, A. V.; Botha, A. J.; Wendler, E.; Wesch, W.

    2014-08-01

    The recrystallization and subsequent crystal growth during annealing of amorphous surface layers on 6H-SiC produced by ion implantation is investigated. Amorphous surface layers were produced by ion implantation of 360 keV ions of iodine, silver, xenon, cesium and strontium into single crystalline 6H-silicon carbide samples. The ion fluence for all the implantations were in the order of 1016 cm-2. Vacuum annealing of the damaged silicon carbide samples was then performed. The microstructure of SiC surfaces before and after annealing was investigated using a high resolution field emission scanning electron microscope (SEM). SEM analysis was complimented by Atomic Force Microscopy (AFM). SEM images acquired by an in-lens detector using an accelerating voltage of 2 kV show nano-crystallites developed for all implanted samples after annealing. Larger and more faceted crystallites along with elongated thin crystallites were observed for iodine and xenon implanted 6H-SiC. Crystallites formed on surfaces implanted with strontium and cesium were smaller and less faceted. Strontium, silver and cesium implanted samples also exhibited more cavities on the surface. AFM was used to evaluate the effect of annealing on the surface roughness. For all the amorphous surfaces which were essentially featureless, the root mean square (rms) roughness was approximately 1 nm. The roughness increased to approximately 17 nm for the iodine implanted sample after annealing with the surface roughness below this value for all the other samples. AFM also showed that the largest crystals grew to heights of about 17, 20, 45, 50 and 65 nm for Sr, Cs, Ag, Xe and I implanted samples after annealing at 1200 °C for 5 h respectively. SEM images and AFM analysis suggest that iodine is more effective in promoting crystal growth during the annealing of bombardment-induced amorphous SiC layers than the rest of the ions we implanted. In samples of silicon carbide co-implanted with iodine and silver, few

  9. Comparative Study of Catalytic Oxidation of Ethanol to Acetaldehyde Using Fe(III Dispersed on Sb2O5 Grafted on SiO2 and on Untreated SiO2 Surfaces

    Directory of Open Access Journals (Sweden)

    Benvenutti Edilson V.

    1998-01-01

    Full Text Available Fe(III was supported on Sb(V oxide grafted on the silica gel surface and directly on the silica gel surface using ion-exchange and impregnation processes producing Fe/Sb/SiO2 and Fe/SiO2, respectively. The catalytic conversion of ethanol to acetaldehyde was much more efficient using Fe/Sb/SiO2 than Fe/SiO2 as catalyst. This higher efficiency of the former catalyst takes into account two aspects: a the new phase FeSbO4 formed when Fe/Sb/SiO2 is heat treated and, b it is higher dispersion on the matrix.

  10. Surface morphology and dislocation characteristics near the surface of 4H-SiC wafer using multi-directional scanning transmission electron microscopy.

    Science.gov (United States)

    Sato, Takahiro; Orai, Yoshihisa; Suzuki, Yuya; Ito, Hiroyuki; Isshiki, Toshiyuki; Fukui, Munetoshi; Nakamura, Kuniyasu; Schamp, C T

    2017-10-01

    To improve the reliability of silicon carbide (SiC) electronic power devices, the characteristics of various kinds of crystal defects should be precisely understood. Of particular importance is understanding the correlation between the surface morphology and the near surface dislocations. In order to analyze the dislocations near the surface of 4H-SiC wafers, a dislocation analysis protocol has been developed. This protocol consists of the following process: (1) inspection of surface defects using low energy scanning electron microscopy (LESEM), (2) identification of small and shallow etch pits using KOH low temperature etching, (3) classification of etch pits using LESEM, (4) specimen preparation of several hundred nanometer thick sample using the in-situ focused ion beam micro-sampling® technique, (5) crystallographic analysis using the selected diffraction mode of the scanning transmission electron microscope (STEM), and (6) determination of the Burgers vector using multi-directional STEM (MD-STEM). The results show a correlation between the triangular terrace shaped surface defects and an hexagonal etch pit arising from threading dislocations, linear shaped surface defects and elliptical shaped etch pits arising from basal plane dislocations. Through the observation of the sample from two orthogonal directions via the MD-STEM technique, a basal plane dislocation is found to dissociate into an extended dislocation bound by two partial dislocations. A protocol developed and presented in this paper enables one to correlate near surface defects of a 4H-SiC wafer with the root cause dislocations giving rise to those surface defects. © The Author 2017. Published by Oxford University Press on behalf of The Japanese Society of Microscopy. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

  11. The Si(100)-Sb 2x1 and Ge(100) 2x1 surfaces: A multi-technique study

    International Nuclear Information System (INIS)

    Richter, M.

    1993-08-01

    The electronic and geometric structures of the clean and Sb terminated Si(100)2x1 and Ge(100)-2x1 surfaces have been investigated using a multi-technique approach. Low energy electron diffraction (LEED), scanning tunneling microscopy (STM), surface extended X-ray absorption fine structure (SEXAFS) spectroscopy and angle-integrated core-level photoemission electron spectroscopy (PES) were employed to measure the surface symmetry, defect structure, relevant bond lengths, atomic coordination and electronic structure. By employing a multi-technique approach, it is possible to correlate changes in the geometric structure to specific features of the core-level lineshape of the substrate. This allows for the assignment of components of the core-level lineshape to be assigned to specific surface and near-surface atoms

  12. Production of stable superhydrophilic surfaces on 316L steel by simultaneous laser texturing and SiO2 deposition

    Science.gov (United States)

    Rajab, Fatema H.; Liu, Zhu; Li, Lin

    2018-01-01

    Superhydrophilic surfaces with liquid contact angles of less than 5 ° have attracted much interest in practical applications including self-cleaning, cell manipulation, adhesion enhancement, anti-fogging, fluid flow control and evaporative cooling. Standard laser metal texturing method often result in unstable wetting characteristics, i.e. changing from super hydrophilic to hydrophobic in a few days or weeks. In this paper, a simple one step method is reported for fabricating a stable superhydrophilic metallic surface that lasted for at least 6 months. Here, 316L stainless steel substrates were textured using a nanosecond laser with in-situ SiO2 deposition. Morphology and chemistry of laser-textured surfaces were characterised using SEM, XRD, XPS and an optical 3D profiler. Static wettability analysis was carried out over a period of 6 months after the laser treatment. The effect of surface roughness on wettability was also studied. Results showed that the wettability of the textured surfaces could be controlled by changing the scanning speed of laser beam and number of passes. The main reason for the realisation of the stable superhydrophilic surface is the combination of the melted glass particles mainly Si and O with that of stainless steel in the micro-textured patterns. This study presents a useful method

  13. [(≡SiO)TaV (=CH2)Cl2], the first tantalum methylidene species prepared and identified on the silica surface

    KAUST Repository

    Chen, Yin

    2013-11-01

    A novel surface tantalum methylidene [(≡SiO)TaV (=CH 2)Cl2] was obtained via thermal decomposition of the well-defined surface species [(≡SiO)TaVCl2Me 2]. This first surface tantalum methylidene ever synthesized has been fully characterized and the kinetics of the a-hydrogen abstraction reaction has also been investigated in the heterogeneous system. © 2013 Elsevier B.V. All rights reserved.

  14. Surface-biofunctionalized multicore/shell CdTe@SiO(2) composite particles for immunofluorescence assay.

    Science.gov (United States)

    Jing, Lihong; Li, Yilin; Ding, Ke; Qiao, Ruirui; Rogach, Andrey L; Gao, Mingyuan

    2011-12-16

    Strongly fluorescent multicore/shell structured CdTe@SiO(2) composite particles of ∼ 50 nm were synthesized via the reverse microemulsion method by using CdTe quantum dots co-stabilized by thioglycolic acid and thioglycerol. The optical stability of the CdTe@SiO(2) composite particles in a wide pH range, under prolonged UV irradiation in pure water, or in different types of physiological buffers was systematically investigated. Towards immunofluorescence assay, both poly(ethylene glycol) (PEG) and carboxyl residues were simultaneously grafted on the surface of the silanol-terminated CdTe@SiO(2) composite particles upon further reactions with silane reagents bearing a PEG segment and carboxyl group, respectively, in order to suppress the nonspecific interactions of the silica particles with proteins and meanwhile introduce reactive moieties to the fluorescent particles. Agarose gel electrophoresis, dynamic light scattering and conventional optical spectroscopy were combined to investigate the effectiveness of the surface modifications. Via the surface carboxyl residue, various antibodies were covalently conjugated to the fluorescent particles and the resultant fluorescent probes were used in detecting cancer cells through both direct fluorescent antibody and indirect fluorescent antibody assays, respectively.

  15. Accessing the application of in situ cosmogenic 14C to surface exposure dating of amorphous SiO2

    Science.gov (United States)

    Cesta, J. M.; Goehring, B. M.; Ward, D. J.

    2017-12-01

    We assess the feasibility and utility of in situ cosmogenic 14C as a geochronometer for landforms composed of amorphous SiO2 through the comparison of 14C surface exposure ages to independently determined eruption ages on Obsidian Dome, California. Landforms composed of amorphous SiO2 phases are difficult to date by conventional cosmogenic nuclide methods due to several complications that may arise (e.g., inability to remove meteoric contamination). The onset of an increased understanding of production rates and analytical measurement of in situ 14C in SiO2 provides an opportunity to address this limitation. Obsidian Dome is a 600-year-old phreatomagmatic dome of the Mono-Inyo Craters located in Inyo County, California, and consists of vesicular pumice, obsidian, and rhyolite. Exposure ages from eight obsidian and banded pumice and obsidian surface samples range from 3947 ± 678 to 914 ± 134 years, all significantly older than the accepted radiocarbon age of 650-550 years. δ13C values for the samples range between +2.65‰ and +1.34‰ and show a negative correlation with CO2 yield. The `too old' exposure ages coupled with this negative correlation between δ13C and CO2 yield suggests the incorporation of an atmospheric component of 14C. Measurement of 14C concentrations in shielded, subsurface samples will assist in isolating the atmospheric 14C component and aid in correcting the surface exposure ages.

  16. Effect of hydrogen plasma treatment on the surface morphology, microstructure and electronic transport properties of nc-Si:H

    International Nuclear Information System (INIS)

    Dutta, P.; Paul, S.; Galipeau, D.; Bommisetty, V.

    2010-01-01

    Hydrogenated nanocrystalline silicon (nc-Si:H) films, deposited by reactive radio-frequency sputtering with 33% hydrogen dilution in argon at 200 o C, were treated with low-power hydrogen plasma at room temperature at various power densities (0.1-0.5 W/cm 2 ) and durations (10 s-10 min). Plasma treatment reduced the surface root mean square roughness and increased the average grain size. This was attributed to the mass transport of Si atoms on the surface by surface and grain boundary diffusion. Plasma treatment under low power density (0.1 W/cm 2 ) for short duration (10 s) caused a significant enhancement of crystalline volume fraction and electrical conductivity, compared to as-deposited film. While higher power (0.5 W/cm 2 ) hydrogen plasma treatment for longer durations (up to 10 min) caused moderate improvement in crystalline fraction and electrical properties; however, the magnitude of improvement is not significant compared to low-power (0.1 W/cm 2 )/short-duration (10 s) plasma exposure. The results indicate that low-power hydrogen plasma treatment at room temperature can be an effective tool to improve the structural and electrical properties of nc-Si:H.

  17. Surface-biofunctionalized multicore/shell CdTe@SiO2 composite particles for immunofluorescence assay

    Science.gov (United States)

    Jing, Lihong; Li, Yilin; Ding, Ke; Qiao, Ruirui; Rogach, Andrey L.; Gao, Mingyuan

    2011-12-01

    Strongly fluorescent multicore/shell structured CdTe@SiO2 composite particles of ~ 50 nm were synthesized via the reverse microemulsion method by using CdTe quantum dots co-stabilized by thioglycolic acid and thioglycerol. The optical stability of the CdTe@SiO2 composite particles in a wide pH range, under prolonged UV irradiation in pure water, or in different types of physiological buffers was systematically investigated. Towards immunofluorescence assay, both poly(ethylene glycol) (PEG) and carboxyl residues were simultaneously grafted on the surface of the silanol-terminated CdTe@SiO2 composite particles upon further reactions with silane reagents bearing a PEG segment and carboxyl group, respectively, in order to suppress the nonspecific interactions of the silica particles with proteins and meanwhile introduce reactive moieties to the fluorescent particles. Agarose gel electrophoresis, dynamic light scattering and conventional optical spectroscopy were combined to investigate the effectiveness of the surface modifications. Via the surface carboxyl residue, various antibodies were covalently conjugated to the fluorescent particles and the resultant fluorescent probes were used in detecting cancer cells through both direct fluorescent antibody and indirect fluorescent antibody assays, respectively.

  18. X-ray diffraction and surface acoustic wave analysis of BST/Pt/TiO{sub 2}/SiO{sub 2}/Si thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mseddi, Souhir; Hedi Ben Ghozlen, Mohamed [Laboratoire de Physique des Materiaux, Faculte des Sciences de Sfax, Universite de Sfax, 3018 Sfax (Tunisia); Njeh, Anouar [Unite de Physique, Informatique et Matematiques, Faculte des Sciences de Gafsa, Universite de Gafsa, 2112 Gafsa (Tunisia); Schneider, Dieter [Fraunhofer-Institut fuer Material- und Strahltechnologie, Winterbergstrasse 28, 1277 Dresden (Germany); Fuess, Hartmut [Institute of Materials Science, University of Technology, Petersenstr.23, 64287 Darmstadt (Germany)

    2011-11-15

    High dielectric constant and electrostriction property of (Ba, Sr)Ti0{sub 3} (BST) thin films result in an increasing interest for dielectric devices and microwave acoustic resonator. Barium strontium titanate (Ba{sub 0.645}Sr{sub 0.355}TiO{sub 3}) films of about 300 nm thickness are grown on Pt(111)/TiO{sub 2}/SiO{sub 2}/Si(001) substrates by rf magnetron sputtering deposition techniques. X-ray diffraction is applied for the microstructural characterization. The BST films exhibit a cubic perovskite structure with a dense and smooth surface. A laser acoustic waves (LA-waves) technique is used to generate surface acoustic waves (SAW) propagating in the BST films. Young's modulus E and the Poisson ratio {nu} of TiO{sub 2,} Pt and BST films in different propagation directions are derived from the measured dispersion curves. Estimation of BST elastics constants are served in SAW studies. Impact of stratification process on SAW, propagating along [100] and [110] directions of silicon substrate, has been interpreted on the basis of ordinary differential equation (ODE) and stiffness matrix method (SMM). A good agreement is observed between experimental and calculated dispersion curves. The performed calculations are strongly related to the implemented crystallographic data of each layer. Dispersion curves are found to be sensitive to the SAW propagation direction and the stratification process for the explored frequency ranges 50-250 MHz, even though it corresponds to a wave length clearly higher than the whole films thickness.

  19. Well-Defined Surface Species [(≡Si - O -)W(=O)Me3] Prepared by Direct Methylation of [(≡Si - O -)W(=O)Cl3], a Catalyst for Cycloalkane Metathesis and Transformation of Ethylene to Propylene

    KAUST Repository

    Hamieh, Ali Imad Ali

    2015-04-03

    The silica-supported tungsten oxo-trimethyl complex [(≡Si - O -)W(=O)Me3] was synthesized using a novel SOMC synthetic approach. By grafting the inexpensive stable compound WOCl4 on the surface of silica, partially dehydroxylated at 700 °C (SiO2-700), a well-defined monopodal surface complex [(≡Si - O -)W(=O)Cl3] was produced. The supported complex directly methylated with ZnMe2 and transformed into [(≡Si - O -)W(=O)Me3], which we fully characterized by microanalysis, IR, mass balance and SS NMR (1H, 13C, 1H-13C HETCOR, 1H-1H DQ and TQ). [(≡Si - O)W(=O)Me3] has two conformational isomers on the surface at room temperature. The conversion of one to the other was observed at 318 K by variable-temperature 13C CP/MAS and 1H spin echo MAS solid-state NMR; this was also confirmed by NMR and DFT calculations. [(≡Si - O)W(=O)Me3] was found to be active in cyclooctane metathesis and to have a wide distribution range in ring-contracted and ring-expanded products. In addition, [(≡Si - O)W(=O)Me3] proved to be highly active for selective transformation of ethylene to propylene compared to other silica-supported organometallic complexes. (Chemical Equation Presented). © 2015 American Chemical Society.

  20. Surface properties of SiO2 with and without H2O2 treatment as gate dielectrics for pentacene thin-film transistor applications

    Science.gov (United States)

    Hung, Cheng-Chun; Lin, Yow-Jon

    2018-01-01

    The effect of H2O2 treatment on the surface properties of SiO2 is studied. H2O2 treatment leads to the formation of Si(sbnd OH)x at the SiO2 surface that serves to reduce the number of trap states, inducing the shift of the Fermi level toward the conduction band minimum. H2O2 treatment also leads to a noticeable reduction in the value of the SiO2 capacitance per unit area. The effect of SiO2 layers with H2O2 treatment on the behavior of carrier transports for the pentacene/SiO2-based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards negative gate-source voltages is due to the reduced number of trap states in SiO2 near the pentacene/SiO2 interface. The existence of a hydrogenated layer between pentacene and SiO2 leads to a change in the pentacene-SiO2 interaction, increasing the value of the carrier mobility.

  1. Improvement of mechanical robustness of the superhydrophobic wood surface by coating PVA/SiO2 composite polymer

    Science.gov (United States)

    Liu, Feng; Wang, Shuliang; Zhang, Ming; Ma, Miaolian; Wang, Chengyu; Li, Jian

    2013-09-01

    Improvement of the robustness of superhydrophobic surfaces is crucial for the purpose of achieving commercial applications of these surfaces in such various areas as self-cleaning, water repellency and corrosion resistance. We have investigated a fabrication of polyvinyl alcohol (PVA)/silica (SiO2) composite polymer coating on wooden substrates with super repellency toward water, low sliding angles, low contact angle hysteresis, and relatively better mechanical robustness. The composite polymer slurry, consisting of well-mixing SiO2 particles and PVA, is prepared simply and subsequently coated over wooden substrates with good adhesion. In this study, the mechanical robustness of superhydrophobic wood surfaces was evaluated. The effect of petaloid structures of the composite polymer on robustness was investigated using an abrasion test and the results were compared with those of superhydrophobic wood surfaces fabricated by other processes. The produced wood surfaces exhibited promising superhydrophobic properties with a contact angle of 159̊ and a sliding angle of 4̊, and the relatively better mechanical robustness.

  2. Surface reactivity and hydroxyapatite formation on Ca5MgSi3O12 ceramics in simulated body fluid

    Science.gov (United States)

    Xu, Jian; Wang, Yaorong; Huang, Yanlin; Cheng, Han; Seo, Hyo Jin

    2017-11-01

    In this work, the new calcium-magnesium-silicate Ca5MgSi3O12 ceramic was made via traditional solid-state reaction. The bioactivities were investigated by immerging the as-made ceramics in simulated body fluid (SBF) for different time at body temperature (37 °C). Then the samples were taken to measure X-ray powder diffraction (XRD), Scanning electron microscopy (SEM), X-ray energy-dispersive spectra (EDS), and Fourier transform infrared spectroscopy (FT-IR) measurements. The bone-like hydroxyapatite nanoparticles formation was observed on the ceramic surfaces after the immersion in SBF solutions. Ca5MgSi3O12 ceramics possess the Young's modulus and the bending strength and of 96.3 ± 1.2 GPa and 98.7 ± 2.3 MPa, respectively. The data suggest that Ca5MgSi3O12 ceramics can quickly induce HA new layers after soaking in SBF. Ca5MgSi3O12 ceramics are potential to be used as biomaterials for bone-tissue repair. The cell adherence and proliferation experiments are conducted confirming the reliability of the ceramics as a potential candidate.

  3. Graphene as a transparent conducting and surface field layer in planar Si solar cells

    Science.gov (United States)

    2014-01-01

    This work presents an experimental and finite difference time domain (FDTD) simulation-based study on the application of graphene as a transparent conducting layer on a planar and untextured crystalline p-n silicon solar cell. A high-quality monolayer graphene with 97% transparency and 350 Ω/□ sheet resistance grown by atmospheric pressure chemical vapor deposition method was transferred onto planar Si cells. An increase in efficiency from 5.38% to 7.85% was observed upon deposition of graphene onto Si cells, which further increases to 8.94% upon SiO2 deposition onto the graphene/Si structure. A large increase in photon conversion efficiency as a result of graphene deposition shows that the electronic interaction and the presence of an electric field at the graphene/Si interface together play an important role in this improvement and additionally lead to a reduction in series resistance due to the conducting nature of graphene. PMID:25114642

  4. Effect of turning parameters on surface roughness of A356/5% SiC composite produced by electromagnetic stir casting

    Energy Technology Data Exchange (ETDEWEB)

    Dwivedi, S. P.; Kumar, Sudhir; Kumar, Ajay [Noida Institute of Engineering Technology, U.P (India)

    2012-12-15

    In the present investigation, A356 alloy 5 wt% SiC composite is fabricated by electromagnetic stir casting process. An attempt has been made to investigate the effect of CNC lathe process parameters like cutting speed, depth of cut, and feed rate on surface roughness during machining of A356 alloy 5 wt% SiC particulate metal-matrix composites in dry condition. Response surface methodology (Box Behnken Method) is chosen to design the experiments. The results reveal that cutting speed increases surface roughness decreases, whereas depth of cut and feed increase surface roughness increase. Optimum values of speed (190 m/min), feed (0.14 mm/rev) and depth of cut (0.20 mm) during turning of A356 alloy 5 wt% SiC composites to minimize the surface roughness (3.15>m) have been find out. The mechanical properties of A356 alloy 5 wt% SiC were also analyzed.

  5. Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

    International Nuclear Information System (INIS)

    Dingemans, G.; Hoex, B.; Sanden, M. C. M. van de; Kessels, W. M. M.; Engelhart, P.; Seguin, R.; Einsele, F.

    2009-01-01

    The thermal and ultraviolet (UV) stability of crystalline silicon (c-Si) surface passivation provided by atomic layer deposited Al 2 O 3 was compared with results for thermal SiO 2 . For Al 2 O 3 and Al 2 O 3 /a-SiN x :H stacks on 2 Ω cm n-type c-Si, ultralow surface recombination velocities of S eff eff 800 deg. C) used for screen printed c-Si solar cells. Effusion measurements revealed the loss of hydrogen and oxygen during firing through the detection of H 2 and H 2 O. Al 2 O 3 also demonstrated UV stability with the surface passivation improving during UV irradiation.

  6. Electronic structure of Si(1 1 1)2 sq root 7x3-(Pb,Sn) surface

    CERN Document Server

    Yuhara, J; Yoshimoto, O; Nakamura, D; Soda, K; Kamada, M

    2003-01-01

    An Si(1 1 1)2 sq root 7x3-(Pb,Sn) surface was studied by means of scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy (ARPES) to identify its electronic structure. The dispersion relationships along the [1 0 1-bar] direction and [1-bar 2 1-bar] direction were obtained by ARPES and two surface states of S1 and S2 were clearly observed on the 2 sq root 7x3-(Pb,Sn) surface. There was no surface band across the Fermi level and the dispersion of both surface states S1 and S2 were rather flat. The S1 band had peaks at GAMMA and K points, and the S2 band had a maximum at M point. The periodicity of S1 band did not match both 2 sq root 7x3 and 1x1 surface Brillouin zones. STM images of the 2 sq root 7x3-(Pb,Sn) surface showed bright spot arrays and continuous bright lines that exhibit 1D charge density wave along [1 0 1-bar] direction for both empty and filled states. The 2 sq root 7x3-(Pb,Sn) surface intrinsically has domain boundary. The surface states S1 and S2 seem to correspond to t...

  7. Effect of surface reactions on steel, Al2O3 and Si3N4counterparts on their tribological performance with polytetrafluoroethylene filled composites

    NARCIS (Netherlands)

    Shen, J.T.; Top, M.; Ivashenko, O.; Rudolf, P.; Pei, Yutao T.; De Hosson, J.Th.M.

    2015-01-01

    The influence of surface reactions on the tribo-performance of steel, Al2O3 and Si3N4 balls sliding against polytetrafluoroethylene/SiO2/epoxy composites was investigated. Al2O3 ball were found to exhibit the best tribo-performance, namely a low coefficient of friction and the lowest wear rates of

  8. Competition between surface modification and abrasive polishing: a method of controlling the surface atomic structure of 4H-SiC (0001)

    Science.gov (United States)

    Deng, Hui; Endo, Katsuyoshi; Yamamura, Kazuya

    2015-03-01

    The surface atomic step-terrace structure of 4H-SiC greatly affects its performance in power device applications. On the basis of the crystal structure of 4H-SiC, we propose the generation mechanism of the a-b-a*-b* type, a-b type and a-a type step-terrace structures. We demonstrate that the step-terrace structure of SiC can be controlled by adjusting the balance between chemical modification and physical removal in CeO2 slurry polishing. When chemical modification plays the main role in the polishing of SiC, the a-b-a*-b* type step-terrace structure can be generated. When the roles of physical removal and chemical modification have similar importance, the a-b-a*-b* type step-terrace structure changes to the a-b type. When physical removal is dominant, the uniform a-a type step-terrace structure can be generated.

  9. Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor

    Directory of Open Access Journals (Sweden)

    Bo Zhang

    2014-01-01

    Full Text Available Ge nanocrystals (Ge-ncs embedded in a SiO2 superlattice structure were prepared by magnetron cosputtering and postdeposition annealing. The formation of spherical nanocrystals was confirmed by transmission electron microscopy and their growth process was studied by a combination of spectroscopic techniques. The crystallinity volume fraction of Ge component was found to increase with crystallite size, but its overall low values indicated a coexistence of crystalline and noncrystalline phases. A reduction of Ge-O species was observed in the superlattice during thermal annealing, accompanied by a transition from oxygen-deficient silicon oxide to silicon dioxide. A growth mechanism involving phase separation of Ge suboxides (GeOx was then proposed to explain these findings and supplement the existing growth models for Ge-ncs in SiO2 films. Further analysis of the bonding structure of Ge atoms suggested that Ge-ncs are likely to have a core-shell structure with an amorphous-like surface layer, which is composed of GeSiO ternary complex. The surface layer thickness was extracted to be a few angstroms and equivalent to several atomic layer thicknesses.

  10. Morphology and grain structure evolution during epitaxial growth of Ag films on native-oxide-covered Si surface

    International Nuclear Information System (INIS)

    Hur, Tae-Bong; Kim, Hong Koo; Perello, David; Yun, Minhee; Kulovits, Andreas; Wiezorek, Joerg

    2008-01-01

    Epitaxial nanocrystalline Ag films were grown on initially native-oxide-covered Si(001) substrates using radio-frequency magnetron sputtering. Mechanisms of grain growth and morphology evolution were investigated. An epitaxially oriented Ag layer (∼5 nm thick) formed on the oxide-desorbed Si surface during the initial growth phase. After a period of growth instability, characterized as kinetic roughening, grain growth stagnation, and increase of step-edge density, a layer of nanocrystalline Ag grains with a uniform size distribution appeared on the quasi-two-dimensional layer. This hierarchical process of film formation is attributed to the dynamic interplay between incoming energetic Ag particles and native oxide. The cyclic interaction (desorption and migration) of the oxide with the growing Ag film is found to play a crucial role in the characteristic evolution of grain growth and morphology change involving an interval of grain growth stagnation

  11. Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots

    Science.gov (United States)

    Makarovsky, Oleg; Turyanska, Lyudmila; Mori, Nobuya; Greenaway, Mark; Eaves, Laurence; Patané, Amalia; Fromhold, Mark; Lara-Avila, Samuel; Kubatkin, Sergey; Yakimova, Rositsa

    2017-09-01

    We report a simultaneous increase of carrier concentration, mobility and photoresponsivity when SiC-grown graphene is decorated with a surface layer of colloidal PbS quantum dots, which act as electron donors. The charge on the ionised dots is spatially correlated with defect charges on the SiC-graphene interface, thus enhancing both electron carrier density and mobility. This charge-correlation model is supported by Monte Carlo simulations of electron transport and used to explain the unexpected 3-fold increase of mobility with increasing electron density. The enhanced carrier concentration and mobility give rise to Shubnikov-de Haas oscillations in the magnetoresistance, which provide an estimate of the electron cyclotron mass in graphene at high densities and Fermi energies up to 1.2  ×  1013 cm-2 and 400 meV, respectively.

  12. A problem finding in calibration of Si(Au) surface-barrier semiconductor detector and a simple resolved method

    International Nuclear Information System (INIS)

    Song Zhangyong; Ruan Fangfang; Lu Rongchun; Chinese Academy of Sccience, Beijing; Yang Zhihu; Tan Jilian; Shao Caojie; Cai Xiaohong; Zhang Hongqiang; Shao Jianxiong; Cui Ying; Xie Jiangshan; Gao Zhimin

    2007-01-01

    In calibration of Si(Au) surface-barrier semiconductor detector, we find the peak-channel of 241 Am standard radioactive source shift with the position and the size of incident window. The reason may be result from the non-uniformity of Au-layer plated on Si-layer, because it may increase the probability of electron-vacancy pair recombination, but the exact reason is not clear. Dut to this problem is disadvantage to heavy ion-atom impact experiment; we resolve it by fixing up the position and the size of incident window and calibrating two sets of spectrometers, which placed symmetrically in the target room. Thus, this two set of apparatus can measure the back-scattered ions simultaneously in ion-atom impact experiment. We could obtain reliable experimental results by comparing with the two back-scattering spectra. (authors)

  13. Epitaxial ferromagnetic Fe3Si on GaAs(111)A with atomically smooth surface and interface

    International Nuclear Information System (INIS)

    Liu, Y. C.; Hung, H. Y.; Kwo, J.; Chen, Y. W.; Lin, Y. H.; Cheng, C. K.; Hong, M.; Tseng, S. C.; Hsu, C. H.; Chang, M. T.; Lo, S. C.

    2015-01-01

    Single crystal ferromagnetic Fe 3 Si(111) films were grown epitaxially on GaAs(111)A by molecular beam epitaxy. These hetero-structures possess extremely low surface roughness of 1.3 Å and interfacial roughness of 1.9 Å, measured by in-situ scanning tunneling microscope and X-ray reflectivity analyses, respectively, showing superior film quality, comparing to those attained on GaAs(001) in previous publications. The atomically smooth interface was revealed by the atomic-resolution Z (atomic number)-contrast scanning transmission electron microscopy (STEM) images using the correction of spherical aberration (Cs)-corrected electron probe. Excellent crystallinity and perfect lattice match were both confirmed by high resolution x-ray diffraction. Measurements of magnetic property for the Fe 3 Si/GaAs(111) yielded a saturation moment of 990 emu/cm 3 with a small coercive field ≤1 Oe at room temperature

  14. Modular PbSrS/PbS mid-infrared vertical external cavity surface emitting laser on Si

    Science.gov (United States)

    Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Zogg, H.; Cao, D.; Kobayashi, S.; Yokoyama, T.; Ishida, A.

    2011-07-01

    A mid-infrared vertical external cavity surface emitting laser (VECSEL) based on undoped PbS is described herein. A 200 nm-thick PbS active layer embedded between PbSrS cladding layers forms a double heterostructure. The layers are grown on a lattice and thermal expansion mismatched Si-substrate. The substrate is placed onto a flat bottom Bragg mirror again grown on a Si substrate, and the VECSEL is completed with a curved top mirror. Pumping is done optically with a 1.55 μm laser diode. This leads to an extremely simple modular fabrication process. Lasing wavelengths range from 3-3.8 μm at 100-260 K heat sink temperature. The lowest threshold power is ˜210 mWp and highest output power is ˜250 mWp. The influence of the different recombination mechanism as well as free carrier absorption on the threshold power is modeled.

  15. PbSe quantum well mid-infrared vertical external cavity surface emitting laser on Si-substrates

    Science.gov (United States)

    Fill, M.; Khiar, A.; Rahim, M.; Felder, F.; Zogg, H.

    2011-05-01

    Mid-infrared vertical external cavity surface emitting lasers based on PbSe/PbSrSe multi-quantum-well structures on Si-substrates are realized. A modular design allows growing the active region and the bottom Bragg mirror on two different Si-substrates, thus facilitating comparison between different structures. Lasing is observed from 3.3 to 5.1 μm wavelength and up to 52 °C heat sink temperature with 1.55 μm optical pumping. Simulations show that threshold powers are limited by Shockley-Read recombination with lifetimes as short as 0.1 ns. At higher temperatures, an additional threshold power increase occurs probably due to limited carrier diffusion length and carrier leakage, caused by an unfavorable band alignment.

  16. Evolution of Si-2N2Nb island configuration on NbN (0 0 1) surface: A first-principles calculation

    International Nuclear Information System (INIS)

    Ren, Yuan; Xia, Qing; Zhang, Chao; Liu, Xuejie; Li, Zhi; Zhang, Fucheng

    2015-01-01

    Graphical abstract: - Highlights: • We investigate the separation and gathering of Nb, Si and N atom around come to NbN grain. • The adsorption and diffusion of single atom around 2N2Nb island were calculated by DFT. • The adsorption behavior of Si-2N2Nb island on NbN (0 0 1) surface were investigated. • The evolution of Si-2N2Nb island on NbN (0 0 1) were calculated by nudged elastic band. - Abstract: The separation and aggregation of Nb, Si, and N atoms around the NbN grain during the deposition of the Nb–Si–N nanocomposite film were discussed. The evolution behavior of the 2N2Nb island and the adsorption and diffusion energy of Nb, Si, and N atoms around the island on the NbN (0 0 1) surface were investigated using the first-principles method based on density functional theory. Results indicated that the most stable configuration of the Nb–Si–N island was the combination of Nb and N atoms to form the island and the possible aggregation of the Si atom to diagonal Nb atom outside the island. Substitution solid solution was eventually formed, in which the Nb atom of the 2N2Nb island was replaced by the Si atom during deposition. However, the Si atom was easily replaced by the Nb atom at the site with abundant Nb atoms. The diffusion energy of the evolution from Nb-2N1Nb1Si to Si-2N2Nb was 1.58 eV, and the total energy of the configuration decreased. Moreover, the interface of Si and NbN grains tended to separate. The highest energy adsorption sites for Nb, Si, N atoms adsorbed on the NbN (0 0 1) surface around the 2N2Nb island were P3, P1, and P2, respectively. The adsorption energies of Nb, Si, and N atoms on the NbN (0 0 1) surface around the 2N2Nb island were 7.3067, 5.3521, and 6.7113 eV, respectively, and their diffusion energies around the 2N2Nb island were 2.62, 1.35, and 5.094 eV, respectively. The low adsorption and diffusion energies of active Si atoms promoted the distribution of Nb and N atoms during deposition. Furthermore, the Nb

  17. siRNA-loaded liposomes: Inhibition of encystment of Acanthamoeba and toxicity on the eye surface.

    Science.gov (United States)

    Faber, Kathrin; Zorzi, Giovanni K; Brazil, Nathalya T; Rott, Marilise B; Teixeira, Helder F

    2017-09-01

    Current treatments for Acanthamoeba keratitis are unspecific. Because of the presence of the resilient cyst form of the parasite, the infection is persistent. Silencing the key protein of cyst formation, glycogen phosphorylase, has shown potential for reducing encystment processes of the Acanthamoeba trophozoite. However, a suitable carrier to protect and deliver siRNA sequences is still needed. DOPE:DSPE-PEG liposomes were prepared by three different techniques and used to associate a therapeutic siRNA sequence. Liposomes prepared by film hydration followed by membrane extrusion were considered the most adequate ones with average size of 250 nm and zeta potential of +45 mV, being able to associate siRNA for at least 24 hr in culture medium. siRNA-liposomes could inhibit up to 66% of the encystment process. Cell viability studies demonstrated MTT reduction capacity higher than 80% after 3 hr incubation with this formulation. After 24 hr of incubation, LDH activity ranged for both the formulations from around 4% to 40%. In vivo tolerance studies in mice showed no macroscopic alteration in the eye structures up to 24 hr after eight administrations during 1 day. Histological studies showed regular tissue architecture without any morphological alteration. Overall, these results suggest that the formulations developed are a promising new strategy for the treatment of ocular keratitis caused by Acanthamoeba spp. © 2017 John Wiley & Sons A/S.

  18. Study on the sweep gas effect on the surface of Li{sub 4}SiO{sub 4} by means of work function measurement

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Atsushi; Yamaguchi, Kenji; Yamawaki, Michio [Tokyo Univ. (Japan)

    1998-03-01

    In the establishment of fuel cycle of tritium, it is important to make research on how the sweep gas composition affects the surface properties of breeder materials and the release of tritium from the surface of them. In this study, the change of contact potential difference (CPD) between Li{sub 4}SiO{sub 4} and Pt was measured in various gas compositions with a high temperature Kelvin probe. The work function change of Li{sub 4}SiO{sub 4} was obtained from the measured CPD and the work function change of Pt which was estimated from blank tests. From the results, the effect of oxygen deficient layer near the surface of Li{sub 4}SiO{sub 4} was observed, and the effect of OH{sup -} at the surface of Li{sub 4}SiO{sub 4} was considered. (author)

  19. Surface functionalized SiO2nanoparticles with cationic polymers via the combination of mussel inspired chemistry and surface initiated atom transfer radical polymerization: Characterization and enhanced removal of organic dye.

    Science.gov (United States)

    Huang, Qiang; Liu, Meiying; Mao, Liucheng; Xu, Dazhuang; Zeng, Guangjian; Huang, Hongye; Jiang, Ruming; Deng, Fengjie; Zhang, Xiaoyong; Wei, Yen

    2017-08-01

    Monodispersed SiO 2 particles functionalized with cationic polymers poly-((3-acrylamidopropyl)trimethylammonium chloride) (PAPTCl) were prepared using mussel inspired surface modification strategy and surface initiated atom transfer radical polymerization (SI-ATRP). Fourier transform infrared spectroscopy, transmission electron microscope, thermogravimetric analysis, X-ray photoelectron spectroscopy, and zeta potential were employed to characterize these SiO 2 samples. The adsorption performance of the functionalized SiO 2 (donated as SiO 2 -PDA-PAPTCl) towards anionic organic dye Congo red (CR) was investigated to evaluate their potential environmental applications. We demonstrated that the surface of SiO 2 particles can be successfully functionalized with cationic PAPTCl. The adsorption capability of as-prepared SiO 2 was found to increases from 28.70 and 106.65mg/g after surface grafted with cationic polymers. The significant enhancement in the adsorption capability of SiO 2 -PDA-PAPTCl is mainly attributed to the introduction of cationic polymers. More importantly, this strategy is expected to be promising for fabrication of many other functional polymer nanocomposites for environmental applications due to the universality of mussel inspired chemistry and well designability and good monomer adaptability of SI-ATRP. Copyright © 2017 Elsevier Inc. All rights reserved.

  20. Formation of SiO2 film by chemical vapor deposition enhanced by atomic species extracted from a surface-wave generated plasma

    Science.gov (United States)

    Okada, H.; Baba, M.; Furukawa, M.; Yamane, K.; Sekiguchi, H.; Wakahara, A.

    2017-01-01

    In this study, we have investigated SiO2 deposition by chemical vapor deposition enhanced by neutral oxygen at the ground state extracted from a surface-wave generated plasma proposed by our group at 350°C using hexamethyldisilane (HMDS) as a precursor. Good properties of deposited SiO2 having refractive index of n = 1.45-1.46 have been confirmed by ellipsometry. Stoichiometric SiO2 was also confirmed by X-ray photoelectron spectroscopy (XPS) with single peak of Si 2p and O 1s. High quality SiO2 film deposition was also confirmed by Fourier transform infrared spectrometer (FT-IR) analysis indicating formation of chemical bonding in SiO2 with no unwanted bonds due to -OH or -CH3 groups.

  1. Silane effects on the surface morphology and abrasion resistance of transparent SiO2/UV-curable resin nano-composites

    International Nuclear Information System (INIS)

    Hsiang, Hsing-I.; Chang, Yu-Lun; Chen, Chi-Yu; Yen, Fu-Su

    2011-01-01

    Transparent ultraviolet curable nano-composite coatings consisting of nano-sized SiO 2 and acrylate resin have been developed to improve the abrasion resistance of organic polymers. The nano-sized SiO 2 particles were surface-modified using various amounts of 3-methacryloxypropyltrimethoxysilane. The 3-methacryloxypropyltrimethoxysilane concentration effects on the surface morphology and abrasion resistance of the transparent SiO 2 /ultraviolet-curable resin nano-composites were investigated using scanning electron microscopy, atomic force microscopy, and ultraviolet-visible spectrophotometer. The results showed that as the 3-methacryloxypropyltrimethoxysilane/SiO 2 weight ratio increased from 0.2 to 0.6, the dispersion, compatibility and cross-linking density between the 3-methacryloxypropyltrimethoxysilane-modified SiO 2 particles and acrylate resin were improved, leading to an increase in abrasion resistance. However, as the 3-methacryloxypropyltrimethoxysilane/SiO 2 weight ratio was increased to 1.5, the additional 3-methacryloxypropyltrimethoxysilane may exceed that needed to fill the pores with the probability of SiO 2 nano-particles existing on the coating surface was lower than that for samples with a 3-methacryloxypropyltrimethoxysilane/SiO 2 weight ratio of 0.6. This produced a decrease in abrasion resistance.

  2. Structural and electronic analysis of Hf on Si(1 1 1) surface studied by XPS, LEED and XPD

    Energy Technology Data Exchange (ETDEWEB)

    Carazzolle, M.F. [Experimentelle Physik 1, Universitaet Dortmund, Otto-Hahn-Str. 4, D44221 Dortmund (Germany); Instituto de Fisica, Universidade Estadual de Campinas, C.P. 6165, 13083-970 Campinas, SP (Brazil)], E-mail: mcarazzo@ifi.unicamp.br; Schuermann, M.; Fluechter, C.R.; Weier, D. [Experimentelle Physik 1, Universitaet Dortmund, Otto-Hahn-Str. 4, D44221 Dortmund (Germany); Berges, U. [Experimentelle Physik 1, Universitaet Dortmund, Otto-Hahn-Str. 4, D44221 Dortmund (Germany); DELTA, Universitaet Dortmund, Maria-Goeppert-Mayer-Str. 2, D44227 Dortmund (Germany); Siervo, A. de [Laboratorio Nacional de Luz Sincrotron, C.P. 6192, 13084-971 Campinas, SP (Brazil); Landers, R. [Instituto de Fisica, Universidade Estadual de Campinas, C.P. 6165, 13083-970 Campinas, SP (Brazil); Laboratorio Nacional de Luz Sincrotron, C.P. 6192, 13084-971 Campinas, SP (Brazil); Kleiman, G.G. [Instituto de Fisica, Universidade Estadual de Campinas, C.P. 6165, 13083-970 Campinas, SP (Brazil); Westphal, C. [Experimentelle Physik 1, Universitaet Dortmund, Otto-Hahn-Str. 4, D44221 Dortmund (Germany); DELTA, Universitaet Dortmund, Maria-Goeppert-Mayer-Str. 2, D44227 Dortmund (Germany)

    2007-05-15

    In this work, we present a systematic electronic and structural study of the Hf-silicide formation upon annealing on Si(1 1 1) surface. The electronic structure and surface composition were determined by X-ray photoelectron spectroscopy (XPS) and angle-resolved X-ray photoelectron spectroscopy (ARXPS). To determine the atomic structure of the surface alloy we used low energy electron diffraction (LEED) and angle-resolved photoelectron diffraction (XPD). It was possible to verify that, after 600 deg. C annealing, there is alloy formation and after 700 deg. C the Hf diffusion process is predominant. Using LEED and XPD measurements we detected the ordered island formation simultaneously with alloy formation.

  3. Surface enhanced 316L/SiC nano-composite coatings via laser cladding and following cold-swaging process

    Science.gov (United States)

    Li, Yuhang; Gao, Shiyou

    2017-10-01

    Cold-swaging is one of a cold deformation processes, and ceramic-reinforcement nano-composite coatings can effectively improve the performance of metal matrix surface. Therefore, the two processes are innovatively combined to further improve the surface properties of the metal matrix in this paper. The microstructure and surface properties of the laser cladding 316L + 10 wt% SiC nano-composite coatings were examined through designed experiments after cold-swaging by self-developed hydraulic machine. Furthermore, the coatings were compared with those without cold-swaging coatings at the same time. The result shows that the cold-swaging process can further enhance the tensile strength, micro-hardness and the wear resistance of the composite coating. This study can be used as a reference for further strengthening of laser cladding nano-composite coatings in future research.

  4. Deposition and characterization of binary Al2O3/SiO2 coating layers on the surfaces of rutile TiO2 and the pigmentary properties

    International Nuclear Information System (INIS)

    Zhang Yunsheng; Yin Hengbo; Wang Aili; Ren Min; Gu Zhuomin; Liu Yumin; Shen Yutang; Yu Longbao; Jiang Tingshun

    2010-01-01

    Binary Al 2 O 3 /SiO 2 -coated rutile TiO 2 composites were prepared by a liquid-phase deposition method starting from Na 2 SiO 3 .9H 2 O and NaAlO 2 . The chemical structure and morphology of binary Al 2 O 3 /SiO 2 coating layers were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, TG-DSC, Zeta potential, powder X-ray diffraction, and transmission electron microscopy techniques. Binary Al 2 O 3 /SiO 2 coating layers both in amorphous phase were formed at TiO 2 surfaces. The silica coating layers were anchored at TiO 2 surfaces via Si-O-Ti bonds and the alumina coating layers were probably anchored at the SiO 2 -coated TiO 2 surfaces via Al-O-Si bonds. The formation of continuous and dense binary Al 2 O 3 /SiO 2 coating layers depended on the pH value of reaction solution and the alumina loading. The binary Al 2 O 3 /SiO 2 -coated TiO 2 composites had a high dispersibility in water. The whiteness and brightness of the binary Al 2 O 3 /SiO 2 -coated TiO 2 composites were higher than those of the naked rutile TiO 2 and the SiO 2 -coated TiO 2 samples. The relative light scattering index was found to depend on the composition of coating layers.

  5. White light emission from fluorescent SiC with porous surface

    DEFF Research Database (Denmark)

    Lu, Weifang; Ou, Yiyu; Fiordaliso, Elisabetta Maria

    2017-01-01

    the bulk fuorescent SiC layer. A high color rendering index of 81.1 has been achieved. Photoluminescence spectra in porous layers fabricated in both commercial n-type and lab grown N-B co-doped 6H-SiC show two emission peaks centered approximately at 460nm and 530nm. Such bluegreen emission phenomenon can......, the photoluminescence intensity from the porous layer was signifcant enhanced by a factor of more than 12. Using a porous layer of moderate thickness (~10µm), high-quality white light emission was realized by combining the independent emissions of blue-green emission from the porous layer and yellow emission from...

  6. Fabrication of a single layer graphene by copper intercalation on a SiC(0001) surface

    International Nuclear Information System (INIS)

    Yagyu, Kazuma; Tochihara, Hiroshi; Tomokage, Hajime; Suzuki, Takayuki; Tajiri, Takayuki; Kohno, Atsushi; Takahashi, Kazutoshi

    2014-01-01

    Cu atoms deposited on a zero layer graphene grown on a SiC(0001) substrate, intercalate between the zero layer graphene and the SiC substrate after the thermal annealing above 600 °C, forming a Cu-intercalated single layer graphene. On the Cu-intercalated single layer graphene, a graphene lattice with superstructure due to moiré pattern is observed by scanning tunneling microscopy, and specific linear dispersion at the K ¯ point as well as a characteristic peak in a C 1s core level spectrum, which is originated from a free-standing graphene, is confirmed by photoemission spectroscopy. The Cu-intercalated single layer graphene is found to be n-doped

  7. Multilayer epitaxial graphene grown on the SiC (000- 1) surface; structure and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Sprinkle, M.; Hicks, J.; Tejeda, A.; Taleb-Ibrahimi, A.; Le Fevre, P.; Bertran, F.; Tinkey, H.; Clark, M.C.; Soukiassian, P.; Martinotti, D.; Hass, J.; Conrad, E.H. (CNRS-UMR); (CEAS); (GIT)

    2010-10-22

    We review the progress towards developing epitaxial graphene as a material for carbon electronics. In particular, we discuss improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's (MEG's) electronic properties. Although graphene grown on both polar faces of SiC will be discussed, our discussions will focus on graphene grown on the (000{bar 1}) C-face of SiC. The unique properties of C-face MEG have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal stacked graphite sample. The origins of multilayer graphene's electronic behaviour are its unique highly ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that leads to each sheet behaving like isolated graphene planes.

  8. Trace element analysis on Si wafer surfaces by TXRF at the ID32 ESRF undulator beamline.

    Science.gov (United States)

    Ortega, L; Comin, F; Formoso, V; Stierle, A

    1998-05-01

    Synchrotron radiation total-reflection X-ray fluorescence (SR-TXRF) has been applied to the impurity analysis of Si wafers using a third-generation synchrotron radiation undulator source. A lower limit of detectability (LLD) for Ni atoms of 17 fg (1.7 x 10(8) atoms cm(-2)) has been achieved with an optical set-up based on an Si(111) double-crystal monochromator and a horizontal sample geometry. These first results are very promising for synchrotron radiation trace element analysis since we estimate that it is possible to lower the LLD by a factor of about 25 by employing appropriate optics and detectors. The use of a crystal monochromator opens new possibilities to perform absorption and scattering experiments (NEXAFS and X-ray standing-wave methods) for chemical and structural analysis of ultratrace elements.

  9. Surface adhesion study of La2O3 thin film on Si and glass substrate for micro-flexography printing

    Science.gov (United States)

    Hassan, S.; Yusof, M. S.; Embong, Z.; Maksud, M. I.

    2017-01-01

    Adhesive property can be described as an interchangeably with some ink and substance which was applied to one surface of two separate items that bonded together. Lanthanum oxide (La2O3) has been used as a rare earth metal candidate as depositing agent or printing ink. This metal deposit was embedded on Silica (Si) wafer and glass substrate using Magnetron Sputtering technique. The choose of Lanthanum oxide as a target is due to its wide application in producing electronic devices such as thin film battery and printed circuit board. The La2O3 deposited on the surface of Si wafer and glass substrate was then analyzed using Angle Resolve X-Ray Photoelectron Spectroscopy (ARXPS). The position for each synthetic component in the narrow scan of Lanthanum (La) 3d and O 1s are referred to the electron binding energy (eV). This research will focus on 3 narrow scan regions which are C 1s, O 1s and La 3d. Further discussion of the spectrum evaluation will be discussed in detail. Here, it is proposed that from the adhesive and surface chemical properties of La is the best on glass substrate which suitable as an alternative medium for micro-flexography printing technique in printing multiple fine solid lines at nano scale. Hence, this paper will describe the capability of this particular metal as rare earth metal in a practice of micro-flexography printing.

  10. Effect of laser surface treatment on the quality of microstructure in recycled Al-Zn-Si cast alloy

    Directory of Open Access Journals (Sweden)

    Eva Tillová

    2014-06-01

    Full Text Available Recycled Al-Zn-Si casting alloys can often be used in new cast products for mechanical engineering, in hydraulic castings, textile machinery parts, cable car components or big parts without heat treatment. Improved mechanical properties and favourable of recycled microstructure of Al-alloys can often significantly increase the lifetime of casting and reduce costs for fuel and reduction of environmental loading. The paper is focused on using one of possible technologies that provide increased mechanical properties of recycled aluminium cast alloys for automotive industry, and that is laser surface hardening. For study was used recycled AlZn10Si8Mg cast alloy. The effect of laser beam Nd: YAG lasers BLS 720 was evaluated with the laser power 50 W and 80 W on the surface of samples. The final microstructure of aluminium alloys depend on the laser process parameters. The changes of microstructure as a grain refinement of the microstructure after laser surface hardening was observed by using classical techniques of etching and deep etching with concentrated HCl. Microstructure was evaluated on an optical microscope Neophot 32 and SEM

  11. The effects of surface conditions on electronic transportation mechanism of Al/SnO2/p-Si/Al structure

    International Nuclear Information System (INIS)

    Karadeniz, S.

    2001-01-01

    In the present work it was aimed to determine the effect of surface states on the electronic conductivity of Al/SnO 2 /p-Si/Al structure. In order to realize that goal, the Al/SnO 2 /p-Si/Al diodes were prepared p-types, 0.8 Ω-cm resistivity from single crystalline silicon of orientation (111). A spraying system was established in order to produce SnO 2 thin films. The morphology of SnO 2 thin films were measured by means of Atomic Force Microscope (AFM). The physical parameters which effected on the electronical conductivity of the structures were determined. The forward current-voltage (I-V) measurements were performed in the temperature range of 173-313 K. The reverse capacitance-voltage (C-V) characteristics were measured at 100 Hz, 1 kHz,10 kHz, 100 kHz, 500 kHz and 1 MHz frequencies at the same temperature range. The energy profile of the surface states effecting on diodes were determined by using high-low frequency capacitance method, Chattopadhyay method and the relation between surface states and ideality factor

  12. Back-angle anomaly {sup 16}O + {sup 28}Si and phenomenological effective surface potential

    Energy Technology Data Exchange (ETDEWEB)

    Saad, S.S.; Darwish, N.Z.; El-Sharkawy [Tanta Univ. (Egypt). Dept. of Physics

    1995-01-01

    The connection between the equations of classical hydrodynamics describing the flow of a liquid and the quantum-mechanical Schrodinger equation is discussed. A non-linear form of the latter is derived. The non-linearity of the Schrodinger equation is approximated by a phenomenological potential which is used to compute the differential cross-section (d{sigma}/d{Omega}) for the elastic scattering of {sup 16}O on {sup 28}Si. (author).

  13. Back-angle anomaly 16O + 28Si and phenomenological effective surface potential

    International Nuclear Information System (INIS)

    Saad, S.S.; Darwish, N.Z.; El-Sharkawy

    1995-01-01

    The connection between the equations of classical hydrodynamics describing the flow of a liquid and the quantum-mechanical Schrodinger equation is discussed. A non-linear form of the latter is derived. The non-linearity of the Schrodinger equation is approximated by a phenomenological potential which is used to compute the differential cross-section (dσ/dΩ) for the elastic scattering of 16 O on 28 Si. (author)

  14. Surface damage on polycrystalline $\\beta$-SiC by xenon ion irradiation at high fluence

    OpenAIRE

    Baillet, J.; Gavarini, S.; Millard-Pinard, N.; Garnier, V.; Peaucelle, C.; Jaurand, X.; Duranti, A.; Bernard, C.; Rapegno, R.; Cardinal, S.; Escobar-Sawa, L; De Echave, T.; Lanfant, B.; Leconte, Y.

    2018-01-01

    International audience; Nano-grained $\\beta$-silicon carbide ($\\beta$-SiC) pellets were prepared by Spark Plasma Sintering (SPS). These were implanted at room temperature with 800 keV xenon at ion fluences of 5.10$^{15}$ and 1.10$^{17}$ cm$^{-2}$. Microstructural modifications were studied by electronic microscopy (TEM and SEM) and xenon profiles were determined by Rutherford Backscattering Spectroscopy (RBS). A complete amorphization of the implanted area associated with a significant oxidat...

  15. THz photoconductivity in light-emitting surface-oxidized Si nanocrystals: the role of large particles

    Czech Academy of Sciences Publication Activity Database

    Zajac, Vít; Němec, Hynek; Kadlec, Christelle; Kůsová, Kateřina; Pelant, Ivan; Kužel, Petr

    2014-01-01

    Roč. 16, Sep (2014), "093013-1"-"093013-25" ISSN 1367-2630 R&D Projects: GA ČR GPP204/12/P235; GA ČR GA13-12386S Institutional support: RVO:68378271 Keywords : ultrafast photoconductivity * Si nanocrystals * charge carrier transport * terahertz spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.558, year: 2014

  16. Characterization of Si(1 1 1)√(3)×√(3)-(Au,In) surface by optical second-harmonic generation

    International Nuclear Information System (INIS)

    Ignatovich, K.V.; Zotov, A.V.; Saranin, A.A.

    2012-01-01

    We investigated the change of optical second harmonic generation (SHG) intensity in the course of Si(1 1 1)√(3)×√(3)-(Au,In) surface formation and during subsequent In island growth on this surface. The Si(1 1 1)√(3)×√(3)-(Au,In) surface is essentially a modified Si(1 1 1)-α-√(3)×√(3)-Au surface in which the domain-wall network (characteristic of the original surface) is completely eliminated due to In adsorption. This surface shows up as the one having homogeneous highly ordered atomic structure. Its formation is accompanied by the extremely high (namely, tenfold) increase of the SHG signal. It was recognized that this increase is associated with an extraordinary high long-range atomic ordering of the Si(1 1 1)√(3)×√(3)-(Au,In) surface, while its other peculiar features, developing the 2D electron gas system and occurrence of the 2D gas of mobile adatoms on it, produce minor effects. Growth of random In islands on Si(1 1 1)√(3)×√(3)-(Au,In) at RT In deposition leads to the decrease of SHG signal indicating its sensitivity to the surface inhomogeneity not only in atomic scale but in the mesascopic scale also.

  17. Thermally processed titanium oxides film on Si(0 0 1) surface studied with scanning tunneling microscopy/spectroscopy

    International Nuclear Information System (INIS)

    Aoki, T.; Shudo, K.; Sato, K.; Ohno, S.; Tanaka, M.

    2010-01-01

    Thermal structural changes of TiO x films built on a Si(0 0 1) surface were investigated at the nanometer scale with scanning tunneling microscopy. Electronic properties of individual clusters were classified by means of scanning tunneling spectroscopy. The differential conductance (dI/dV) near the Fermi energy showed that nano-clusters were transformed from semiconducting Ti-silicates into metallic Ti-silicides after heating to 970 K. Peaks of normalized differential conductance (dI/dV/(I/V)) of the clusters shifted after heating to about 1070 K, indicating exclusion of oxygen from the clusters.

  18. Theoretical study on the initial reaction mechanisms of ansa-metallocene zirconium precursor on hydroxylated Si(1 0 0) surface.

    Science.gov (United States)

    Zhou, Guangfen; Ren, Jie; Zhang, Shaowen

    2016-05-01

    The initial reaction mechanisms for depositing ZrO2 thin films using ansa-metallocene zirconium (Cp2CMe2)ZrMe2 precursor were studied by density functional theory (DFT) calculations. The (Cp2CMe2)ZrMe2 precursor could be absorbed on the hydroxylated Si(1 0 0) surface via physisorption. Possible reaction pathways of (Cp2CMe2)ZrMe2 were proposed. For each reaction, the activation energies and reaction energies were compared, and stationary points along the reaction pathways were shown. In addition, the influence of dispersion effects on the reactions was evaluated by non-local dispersion corrected DFT calculations.

  19. Mechanic studies of monolayer formation on H-Si(111) surfaces

    NARCIS (Netherlands)

    Rijksen, B.M.G.

    2012-01-01

    Covalently attached organic monolayers on silicon surfaces form thermally and chemically stable platforms for (bio)functionalization of the surface. Recent advances in monolayer formation – yielding increases in monolayer quality and the complete exclusion of oxygen at modified surfaces – have

  20. Surface enhanced Raman spectroscopy in nanofibers mats of SiO2-TiO2-Ag

    Directory of Open Access Journals (Sweden)

    José Hafid Roque-Ruiz

    Full Text Available Surface-enhanced Raman scattering (SERS is a powerful tool with high potential for detection of dilute analytes. Nanofibers functionalized by metal nanostructures and particles are exploited as effective flexible substrates for SERS analysis. SERS-active substrates of silice-titania-silver (SiO2-TiO2-Ag nanofibers were prepared using a simple approach involving electrospinning. We report a simple method for quantitative SERS analysis using SiO2-TiO2-Ag nanofibers as the SERS substrate. Precursors SiO2 and TiO2 were synthetized through the sol-gel method and then incorporated into a polymeric PVP matrix; later they were processed by coaxial electrospinning to obtain fibers with an average diameter of 250 nm. The SiO2-TiO2-Ag structure was demonstrated by Raman, XRD, IR, SEM and EDX. Through infrared spectroscopy it was possible to evaluate the thermal evolution of the sol-gel process. The Titania phase transformation was observed around 800 °C and the hydroxyl group loss was detected between 500 and 800 °C. The presence of two Titania phases, anatase and rutile were analized with DRX. Using Pyridine (1 nM as probe molecule the SERS effect of the scaffold was evaluated and it was determined that the vibration modes 8a, 8b, and 15 were the most amplified signals with a 3 orders of magnitude factor. With this it was concluded that the Silica-Titania-Silver Scaffold is a feasible as a SERS enhancer. Keywords: Electrospinning, Sol-gel, SERS

  1. Surface enhanced Raman spectroscopy in nanofibers mats of SiO2-TiO2-Ag

    Science.gov (United States)

    Roque-Ruiz, José Hafid; Martínez-Máynez, Héctor; Zalapa-Garibay, Manuela Alejandra; Arizmendi-Moraquecho, Ana; Farias, Rurik; Reyes-López, Simón Yobanny

    Surface-enhanced Raman scattering (SERS) is a powerful tool with high potential for detection of dilute analytes. Nanofibers functionalized by metal nanostructures and particles are exploited as effective flexible substrates for SERS analysis. SERS-active substrates of silice-titania-silver (SiO2-TiO2-Ag) nanofibers were prepared using a simple approach involving electrospinning. We report a simple method for quantitative SERS analysis using SiO2-TiO2-Ag nanofibers as the SERS substrate. Precursors SiO2 and TiO2 were synthetized through the sol-gel method and then incorporated into a polymeric PVP matrix; later they were processed by coaxial electrospinning to obtain fibers with an average diameter of 250 nm. The SiO2-TiO2-Ag structure was demonstrated by Raman, XRD, IR, SEM and EDX. Through infrared spectroscopy it was possible to evaluate the thermal evolution of the sol-gel process. The Titania phase transformation was observed around 800 °C and the hydroxyl group loss was detected between 500 and 800 °C. The presence of two Titania phases, anatase and rutile were analized with DRX. Using Pyridine (1 nM) as probe molecule the SERS effect of the scaffold was evaluated and it was determined that the vibration modes 8a, 8b, and 15 were the most amplified signals with a 3 orders of magnitude factor. With this it was concluded that the Silica-Titania-Silver Scaffold is a feasible as a SERS enhancer.

  2. Surface reconstruction switching induced by tensile stress of DB steps: From Ba/Si(0 0 1)- 2 × 3 to Ba/Si(0 0 1)-4° off- 3 × 2

    Science.gov (United States)

    Kim, Hidong; Lkhagvasuren, Altaibaatar; Zhang, Rui; Seo, Jae M.

    2018-05-01

    The alkaline-earth metal adsorption on Si(0 0 1) has attracted much interest for finding a proper template in the growth of high- κ and crystalline films. Up to now on the flat Si(0 0 1) surface with double domains and single-layer steps, the adsorbed Ba atoms are known to induce the 2 × 3 structure through removing two Si dimers and adding a Ba atom per unit cell in each domain. In the present investigation, the Si(0 0 1)-4° off surface with DB steps and single domains has been employed as a substrate and the reconstruction at the initial stage of Ba adsorption has been investigated by scanning tunneling microscopy and synchrotron photoemission spectroscopy. On this vicinal and single domain terrace, a novel 3 × 2 structure rotated by 90° from the 2 × 3 structure has been found. Such a 3 × 2 structure turns out to be formed by adding a Ba atom and a Si dimer per unit cell. This results from the fact that the adsorbed Ba2+ ions with a larger ionic radius relieve tensile stress on the original Si dimers exerted by the rebonded atoms at the DB step.

  3. Modification of Semiconductor Surfaces through Si-N Linkages by Wet-Chemistry Approaches and Modular Functionalization of Zinc Oxide Surfaces for Chemical Protection of Material Morphology

    Science.gov (United States)

    Gao, Fei

    Semiconductor substrates are widely used in many applications. Multiple practical uses involving these materials require the ability to tune their physical and chemical properties to adjust those to a specific application. In recent years, surface and interface reactions have affected dramatically device fabrication and material design. Novel surface functionalization techniques with diverse chemical approaches make the desired physical, thermal, electrical, and mechanical properties attainable. Meanwhile, the modified surface can serve as one of the most important key steps for further assembly process in order to make novel devices and materials. In the following chapters, novel chemical approaches to the functionalization of silicon and zinc oxide substrates will be reviewed and discussed. The specific functionalities including amines, azides, and alkynes on surfaces of different materials will be applied to address subsequent attachment of large molecules and assembly processes. This research is aimed to develop new strategies for manipulating the surface properties of semiconductor materials in a controlled way. The findings of these investigations will be relevant for future applications in molecular and nanoelectronics, sensing, and solar energy conversion. The ultimate goals of the projects are: 1) Preparation of an oxygen-and carbon-free silicon surface based exclusively on Si-N linkages for further modification protocols.. This project involves designing the surface reaction of hydrazine on chlorine-terminated silicon surface, introduction of additional functional group through dehydrohalogenation condensation reaction and direct covalent attachment of C60. 2) Demonstrating alternative method to anchor carbon nanotubes to solid substrates directly through the carbon cage.. This project targets surface modification of silicon and gold substrates with amine-terminated organic monolayers and the covalent attachment of nonfunctionalized and carboxylic acid

  4. Controlled amino-functionalization by electrochemical reduction of bromo and nitro azobenzene layers bound to Si(111) surfaces.

    Science.gov (United States)

    Ullien, Daniela; Thüne, Peter C; Jager, Wolter F; Sudhölter, Ernst J R; de Smet, Louis C P M

    2014-09-28

    4-Nitrobenzenediazonium (4-NBD) and 4-bromobenzenediazonium (4-BBD) salts were grafted electrochemically onto H-terminated, p-doped silicon (Si) surfaces. Atomic force microscopy (AFM) and ellipsometry experiments clearly showed layer thicknesses of 2-7 nm, which indicate multilayer formation. Decreasing the diazonium salt concentration and the reaction time resulted in a smaller layer thickness, but did not prevent the formation of multilayers. It was demonstrated, mainly by X-ray photoelectron spectroscopy (XPS), that the diazonium salts not only react with the H-terminated Si surface, but also with electrografted phenyl groups via azo-bond formation. These azo bonds can be electrochemically reduced at Ered = -1.5 V, leading to the corresponding amino groups. This reduction resulted in a modest decrease in layer thickness, and did not yield monolayers. This indicates that other coupling reactions, notably a biphenyl coupling, induced by electrochemically produced phenyl radicals, take place as well. In addition to the azo functionalities, the nitro functionalities in electrografted layers of 4-NBD were independently reduced to amino functionalities at a lower potential (Ered = -2.1 V). The presence of amino functionalities on fully reduced layers, both from 4-NBD- and 4-BBD-modified Si, was shown by the presence of fluorine after reaction with trifluoroacetic anhydride (TFAA). This study shows that the electrochemical reduction of azo bonds generates amino functionalities on layers produced by electrografting of aryldiazonium derivatives. In this way multifunctional layers can be formed by employing functional aryldiazonium salts, which is believed to be very practical in the fabrication of sensor platforms, including those made of multi-array silicon nanowires.

  5. Atomic force microscopy measurements of topography and friction on dotriacontane films adsorbed on a SiO2 surface

    DEFF Research Database (Denmark)

    Trogisch, S.; Simpson, M.J.; Taub, H.

    2005-01-01

    We report comprehensive atomic force microscopy (AFM) measurements at room temperature of the nanoscale topography and lateral friction on the surface of thin solid films of an intermediate-length normal alkane, dotriacontane (n-C32H66), adsorbed onto a SiO2 surface. Our topographic and frictional...... their location. Above a minimum size, the bulk particles are separated from islands of perpendicularly oriented molecules by regions of exposed parallel layers that most likely extend underneath the particles. We find that the lateral friction is sensitive to the molecular orientation in the underlying...... crystalline film and can be used effectively with topographic measurements to resolve uncertainties in the film structure. We measure the same lateral friction on top of the bulk particles as on the perpendicular layers, a value that is about 2.5 times smaller than on a parallel layer. Scans on top...

  6. Benchmarking of dimensional accuracy and surface roughness for AlSi10Mg part by selective laser melting (SLM)

    Science.gov (United States)

    Kamarudin, K.; Wahab, M. S.; Raus, A. A.; Ahmed, Aqeel; Shamsudin, S.

    2017-04-01

    Selective Laser Melting (SLM) is an advance Additive Manufacturing (AM) procedure that a component is manufactured in a layer by layer manner by melting the top surface of a powder bed with a high intensity laser according to sliced 3D CAD data. AlSi10Mg alloy is a traditional cast alloy that is often used for die-casting. Because of its good mechanical and other properties, this alloy has been widely used in the automotive industry. In this study the SLM process is characterized according to these requirements for mould manufacturing application and find the feasibility for manufacturing it by examining the surface roughness and dimensional accuracy of the benchmark produced through SLM process at constant parameters. The benchmark produced by SLM shows the potential of SLM in a manufacturing application particularly in moulds.

  7. Surface properties and field emission characteristics of chemical vapor deposition diamond grown on Fe/Si substrates

    International Nuclear Information System (INIS)

    Hirakuri, Kenji; Yokoyama, Takahiro; Enomoto, Hirofumi; Mutsukura, Nobuki; Friedbacher, Gernot

    2001-01-01

    Electron field emission characteristics of diamond grains fabricated on iron dot-patterned silicon (Fe/Si) substrates at different methane concentrations have been investigated. The characteristics of the samples could be improved by control of the methane concentration during diamond fabrication. Etching treatment of the as-grown diamond has enhanced the emission properties both with respect to current and threshold voltage. In order to study the influence of etching effects on the field emission characteristics, the respective surfaces were studied by Raman spectroscopy, Auger electron spectroscopy, and electron spectroscopy for chemical analysis (ESCA). ESCA revealed intensive graphite and FeO x peaks on the sample surface grown at high methane concentration. For the etched samples, the peaks of diamond and silicon carbide were observed, and the peaks of nondiamond carbon disappeared. The experimental results show that the etching process removes graphitic and nondiamond carbon components. [copyright] 2001 American Institute of Physics

  8. Dimensional Accuracy and Surface Roughness Analysis for AlSi10Mg Produced by Selective Laser Melting (SLM

    Directory of Open Access Journals (Sweden)

    Kamarudin K.

    2016-01-01

    Full Text Available Selective Laser Melting (SLM is an Additive Manufacturing (AM technique that built 3D part in a layer-by-layer method by melting the top surface layer of a powder bed with a high intensity laser according to sliced 3D CAD data. AlSi10Mg alloy is a traditional cast alloy that is broadly used for die-casting process and used in automotive industry due its good mechanical properties. This paper seeks to investigate the requirement SLM in rapid tooling application. The feasibility study is done by examining the surface roughness and dimensional accuracy as compared to the benchmark part produced through the SLM process with constant parameters. The benchmark produced by SLM shows the potential of SLM in a manufacturing application particularly in moulds.

  9. Reaction of Tri-methylaluminum on Si (001) Surface for Initial Aluminum Oxide Thin-Film Growth

    International Nuclear Information System (INIS)

    Kim, Dae Hee; Kim, Dae Hyun; Jeong, Yong Chan; Seo, Hwa Il; Kim, Yeong Cheol

    2010-01-01

    We studied the reaction of tri-methylaluminum (TMA) on hydroxyl (OH)-terminated Si (001) surfaces for the initial growth of aluminum oxide thin-films using density functional theory. TMA was adsorbed on the oxygen atom of OH due to the oxygen atom's lone pair electrons. The adsorbed TMA reacted with the hydrogen atom of OH to produce a di-methylaluminum group (DMA) and methane with an energy barrier of 0.50 eV. Low energy barriers in the range of 0 - 0.11 eV were required for DMA migration to the inter-dimer, intra-dimer, and inter-row sites on the surface. A unimethylaluminum group (UMA) was generated at each site with low energy barriers in the range of 0.21 - 0.25 eV. Among the three sites, the inter-dimer site was the most probable for UMA formation

  10. ARPES view on surface and bulk hybridization phenomena in the antiferromagnetic Kondo lattice CeRh2Si2.

    Science.gov (United States)

    Patil, S; Generalov, A; Güttler, M; Kushwaha, P; Chikina, A; Kummer, K; Rödel, T C; Santander-Syro, A F; Caroca-Canales, N; Geibel, C; Danzenbächer, S; Kucherenko, Yu; Laubschat, C; Allen, J W; Vyalikh, D V

    2016-03-18

    The hybridization between localized 4f electrons and itinerant electrons in rare-earth-based materials gives rise to their exotic properties like valence fluctuations, Kondo behaviour, heavy-fermions, or unconventional superconductivity. Here we present an angle-resolved photoemission spectroscopy (ARPES) study of the Kondo lattice antiferromagnet CeRh2Si2, where the surface and bulk Ce-4f spectral responses were clearly resolved. The pronounced 4f (0) peak seen for the Ce terminated surface gets strongly suppressed in the bulk Ce-4f spectra taken from a Si-terminated crystal due to much larger f-d hybridization. Most interestingly, the bulk Ce-4f spectra reveal a fine structure near the Fermi edge reflecting the crystal electric field splitting of the bulk magnetic 4f (1)5/2 state. This structure presents a clear dispersion upon crossing valence states, providing direct evidence of f-d hybridization. Our findings give precise insight into f-d hybridization penomena and highlight their importance in the antiferromagnetic phases of Kondo lattices.

  11. Incident energy dependence of scattering behavior of water molecules on Si (100) and graphite surfaces

    Science.gov (United States)

    Kihara, G.; Kotsubo, Y.; Yoshimoto, Y.; Kinefuchi, I.; Takagi, S.

    2016-11-01

    The interaction between water molecules and solid surfaces has a great impact on water vapor flows in nanostructures. We conduct molecular beam scattering experiments covering the incident energy range corresponding to the thermal energy at room temperature to investigate the scattering behavior of water molecules on silicon and graphite surfaces. The incident energy dependence of the scattering distributions exhibits opposite trends on these surfaces. Molecular dynamics simulations reveal that the difference is caused by the inertia effect of the incident molecules and the surface corrugations.

  12. Surface roughness prediction model in end milling of Al/SiCp MMC ...

    African Journals Online (AJOL)

    user

    Keywords: Surface roughness (Ra), Response surface method (RSM), End milling, Metal matrix composites. DOI: http://dx.doi.org/10.4314/ijest.v3i6.7. 1. Introduction. The recent advancements in the CNC machine tool technology and the wide availability in manufacturing of mechanical components made it possible to ...

  13. Visible-light attachment of Si-C linked functionalized organic monolayers on silicon surfaces

    NARCIS (Netherlands)

    Smet, de L.C.P.M.; Pukin, A.V.; Sun, Q.Y.; Eves, B.J.; Lopinski, G.P.; Visser, G.M.; Zuilhof, H.; Sudhölter, E.J.R.

    2005-01-01

    Organic monolayers on hydrogen-terminated silicon surfaces were prepared under extremely mild conditions using visible light and analyzed by a variety of surface-sensitive techniques: (angle-resolved) X-ray photoelectron spectroscopy (ARXPS), scanning tunneling microscopy (STM), high-resolution

  14. FY1995 study on the low energy reaction of Si surface with halogen atoms and positive and negative ions; 1995 nendo harogen genshi, sei/fu ion to Si hyomen hanno no teisonshoka kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    For the damageless fabrication of nanometer-electronics devices, low energy and damage-free surface reactions have been investigated as follows. (1) Negative ion etching of silicon has been investigated in SF{sub 6} and Cl{sub 2} plasma. (2) To establish the self-limiting reaction process which is necessary to realize the atomically layer-by-layer etching, the initial reaction of fluorine (F) atoms and F{sub 2} molecules with hydrogen (H)-terminated Si (111) has been studied. In both SF{sub 6} and Cl{sub 2} plasma etching, the etching reactivity of negative ions was proved to be higher than those of positive ions, since negative ions are atomical like the radical. A notch-free etching of n+ poly-silicon with 0.3{mu}m L and S pattern was successfully obtained by an alternative irradiation of positive and negative ions in SF{sub 6} plasma. For SiO{sub 2} and other oxide etching with negative ions the high rate was observed but not with high selectivity. Negative ion-assisted Si oxidation was found to be one order faster than radical and thermal oxidations. Based on the ATR and XPS measurements, F atom/H-terminated Si(111) surface reaction has been revealed. First F radicals penetrates just underneath of the Si-H bond, generating the B{sub 2} peak. Further exposure appear the B{sub 3} peak which arises from the bonding of a F atom with a Si-H bond at the five-coordination state. However, more exposure of F atoms caused higher order SiF{sub x}(x=l,2,3) products. Hence, F{sub 2} gas which was less reactive than F atoms was investigated. It was found out that the exposure of 5 % F{sub 2}/He to H-terminated Si (111) reached a plateau value at 5{sub x}10{sup 5} L where terminated H atoms quite disappeared. The SiF monolayer corresponded exactly to an atomic layer of Si(111) was formed. This indicates that the self-limiting process for the Si/F system has been realized first. (NEDO)

  15. Highly active surface-enhanced Raman scattering (SERS) substrates based on gold nanoparticles infiltrated into SiO{sub 2} inverse opals

    Energy Technology Data Exchange (ETDEWEB)

    Ankudze, Bright; Philip, Anish [Department of Chemistry, University of Eastern Finland, P.O. Box 111, F1-80101, Joensuu (Finland); Pakkanen, Tuula T., E-mail: Tuula.Pakkanen@uef.fi [Department of Chemistry, University of Eastern Finland, P.O. Box 111, F1-80101, Joensuu (Finland); Matikainen, Antti; Vahimaa, Pasi [Institute of Photonics, University of Eastern Finland, P.O. Box 111, F1-80101, Joensuu (Finland)

    2016-11-30

    Highlights: • SERS substrates prepared by infiltration of nanoparticles into SiO{sub 2} inverse opal. • The SERS substrate gives an enhancement factor of 10{sup 7} for 4-aminothiophenol. • The sensitivity of the substrate is mainly attributed to gold nanoparticle clusters. - Abstract: SiO{sub 2} inverse opal (IO) films with embedded gold nanoparticles (AuNPs) for surface-enhanced Raman scattering (SERS) application are reported. SiO{sub 2} IO films were loaded with AuNPs by a simple infiltration in a single cycle to form Au-SiO{sub 2} IOs. The optical property and the morphology of the Au-SiO{sub 2} IO substrates were characterized; it was observed that they retained the Bragg diffraction of SiO{sub 2} IO and the localized surface plasmon resonance (LSPR) of AuNPs. The SERS property of the Au-SiO{sub 2} IO substrates were studied with methylene blue (MB) and 4-aminothiophenol (4-ATP). The SERS enhancement factors were 10{sup 7} and 10{sup 6} for 4-ATP and MB, respectively. A low detection limit of 10{sup −10} M for 4-ATP was also obtained with the Au-SiO{sub 2} IO substrate. A relative standard deviation of 18.5% for the Raman signals intensity at 1077 cm{sup −1} for 4-ATP shows that the Au-SiO{sub 2} IO substrates have good signal reproducibility. The results of this study indicate that the Au-SiO{sub 2} IO substrates can be used in sensing and SERS applications.

  16. Covalently attached organic monolayers on SiC and SixN4 surfaces: Formation using UV light at room temperature

    NARCIS (Netherlands)

    Rosso, M.; Giesbers, M.; Arafat, A.; Schroën, C.G.P.H.; Zuilhof, H.

    2009-01-01

    We describe the formation of alkyl monolayers on silicon carbide (SiC) and silicon-rich silicon nitride (SixN4) surfaces, using UV irradiation in the presence of alkenes. Both the surface preparation and the monolayer attachment were carried out under ambient conditions. The stable coatings obtained

  17. The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS

    Science.gov (United States)

    Tengeler, Sven; Kaiser, Bernhard; Ferro, Gabriel; Chaussende, Didier; Jaegermann, Wolfram

    2018-01-01

    The (001) surface of cubic silicon carbide (3C SiC) after cleaning, Ar sputtering and three different wet chemical etching procedures was thoroughly investigated via (angle resolved) XPS, HREELS, and LEED. While Ar sputtering was found to be unsuitable for surface preparation, all three employed wet chemical etching procedures (piranha/NH4F, piranha/HF, and RCA) provide a clean surface. HF as oxide removal agent tends to result in fluorine traces on the sample surface, despite thorough rinsing. All procedures yield a 1 × 1 Si-OH/C-H terminated surface. However, the XPS spectra reveal some differences in the resulting surface states. NH4F for oxide removal produces a flat band situation, whereas the other two procedures result in a slight downward (HF) or upward (RCA) band bending. Because the band bending is small, it can be concluded that the number of unsaturated surface defects is low.

  18. Controlled in situ formation of polyacrylamide hydrogel on PET surface via SI-ARGET-ATRP for wound dressings

    Energy Technology Data Exchange (ETDEWEB)

    Nazari Pour, Sedigheh [Department of Chemistry, Faculty of Science, University of Manitoba, Winnipeg, Canada R3T 2N2 (Canada); Ghugare, Shivkumar V. [Department of Textile Science, Faculty of Human Ecology, University of Manitoba, Winnipeg, Canada R3T 2N2 (Canada); Wiens, Richard; Gough, Kathleen [Department of Chemistry, Faculty of Science, University of Manitoba, Winnipeg, Canada R3T 2N2 (Canada); Liu, Song, E-mail: Song.Liu@umanitoba.ca [Department of Chemistry, Faculty of Science, University of Manitoba, Winnipeg, Canada R3T 2N2 (Canada); Department of Textile Science, Faculty of Human Ecology, University of Manitoba, Winnipeg, Canada R3T 2N2 (Canada); Department of Biosystems Engineering, Faculty of Engineering, University of Manitoba, Winnipeg, Canada R3T 2N2 (Canada)

    2015-09-15

    Graphical abstract: - Highlights: • We grow poly(acrylamide) (PAM) hydrgol from a polymer surface in a controlled way. • Divinyl crosslinker doesn't compromise the control chain growth feature of ARGET-ATRP. • ATR-FTIR-FPA images (spatial resolution 220 nm) reveal a uniform grafting of PAM. • PAM grafted wound dressing can be dual functional: low-adherent and antibacterial. - Abstract: Well-defined polyacrylamide (PAM) hydrogel was synthesized on the surface of poly(ethylene terephthalate) (PET) film via surface-initiated activators regenerated by electron transfer atom transfer radical polymerization (SI-ARGET-ATRP). Following the deposition of an ATRP initiator (2-bromoisobutyrylbromide) on PET film, PAM hydrogel was grafted from the functionalized PET surface via ARGET-ATRP. XPS and FTIR-ATR confirmed that PAM hydrogel was successfully grafted on the PET surface. Results from AFM, SEM, and FTIR-FPA microscopic investigations showed that PAM hydrogel uniformly covers the surface of PET film. The grafting yield increases linearly with increasing reaction time, indicating that the growth of PAM hydrogel on the surface of PET is well controlled. In a cell adhesion assay, PAM hydrogel grafted PET films (PAM hydrogel-g-PET) showed low adhesion to keratinocyte cells. To impart PAM hydrogel-g-PET with antibacterial function, AgNPs were self-assembled along the amide side chains of PAM hydrogel. AgNPs loaded-PAM hydrogel-g-PET shows 99% reduction in the number of multidrug-resistant Pseudomonas aeruginosa within 3 h contact.

  19. Controlled in situ formation of polyacrylamide hydrogel on PET surface via SI-ARGET-ATRP for wound dressings

    International Nuclear Information System (INIS)

    Nazari Pour, Sedigheh; Ghugare, Shivkumar V.; Wiens, Richard; Gough, Kathleen; Liu, Song

    2015-01-01

    Graphical abstract: - Highlights: • We grow poly(acrylamide) (PAM) hydrgol from a polymer surface in a controlled way. • Divinyl crosslinker doesn't compromise the control chain growth feature of ARGET-ATRP. • ATR-FTIR-FPA images (spatial resolution 220 nm) reveal a uniform grafting of PAM. • PAM grafted wound dressing can be dual functional: low-adherent and antibacterial. - Abstract: Well-defined polyacrylamide (PAM) hydrogel was synthesized on the surface of poly(ethylene terephthalate) (PET) film via surface-initiated activators regenerated by electron transfer atom transfer radical polymerization (SI-ARGET-ATRP). Following the deposition of an ATRP initiator (2-bromoisobutyrylbromide) on PET film, PAM hydrogel was grafted from the functionalized PET surface via ARGET-ATRP. XPS and FTIR-ATR confirmed that PAM hydrogel was successfully grafted on the PET surface. Results from AFM, SEM, and FTIR-FPA microscopic investigations showed that PAM hydrogel uniformly covers the surface of PET film. The grafting yield increases linearly with increasing reaction time, indicating that the growth of PAM hydrogel on the surface of PET is well controlled. In a cell adhesion assay, PAM hydrogel grafted PET films (PAM hydrogel-g-PET) showed low adhesion to keratinocyte cells. To impart PAM hydrogel-g-PET with antibacterial function, AgNPs were self-assembled along the amide side chains of PAM hydrogel. AgNPs loaded-PAM hydrogel-g-PET shows 99% reduction in the number of multidrug-resistant Pseudomonas aeruginosa within 3 h contact

  20. Drag reduction in reservoir rock surface: Hydrophobic modification by SiO{sub 2} nanofluids

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Yong-Li, E-mail: yylhill@163.com [College of Chemistry & Chemical Engineering, Xi’an Shiyou University, Xi’an 710065 (China); Cui, Ming-Yue; Jiang, Wei-Dong; He, An-Le; Liang, Chong [Langfang Branch of Research Institute of Petroleum Exploration & Development, Langfang 065007 (China)

    2017-02-28

    Graphical abstract: The micro-nanoscale hierarchical structures at the sandstone core surface are constructed by adsorption of the modified silica nanoparticles, which leads to the effect of drag reduction to improve the low injection rate in ultra-low permeability reservoirs. - Highlights: • A micro-nanoscale hierarchical structure is formed at the reservoir rock surface. • An inversion has happened from hydrophilic into hydrophobic modified by nanofluids. • The effect of drag reduction to improve the low injection rate is realized. • The mechanism of drag reduction induced from the modified core surface was unclosed. - Abstract: Based on the adsorption behavior of modified silica nanoparticles in the sandstone core surface, the hydrophobic surface was constructed, which consists of micro-nanoscale hierarchical structure. This modified core surface presents a property of drag reduction and meets the challenge of high injection pressure and low injection rate in low or ultra-low permeability reservoir. The modification effects on the surface of silica nanoparticles and reservoir cores, mainly concerning hydrophobicity and fine structure, were determined by measurements of contact angle and scanning electron microscopy. Experimental results indicate that after successful modification, the contact angle of silica nanoparticles varies from 19.5° to 141.7°, exhibiting remarkable hydrophobic properties. These modified hydrophobic silica nanoparticles display a good adsorption behavior at the core surface to form micro-nanobinary structure. As for the wettability of these modified core surfaces, a reversal has happened from hydrophilic into hydrophobic and its contact angle increases from 59.1° to 105.9°. The core displacement experiments show that the relative permeability for water has significantly increased by an average of 40.3% via core surface modification, with the effects of reducing injection pressure and improving injection performance of water

  1. Drag reduction in reservoir rock surface: Hydrophobic modification by SiO2 nanofluids

    International Nuclear Information System (INIS)

    Yan, Yong-Li; Cui, Ming-Yue; Jiang, Wei-Dong; He, An-Le; Liang, Chong

    2017-01-01

    Graphical abstract: The micro-nanoscale hierarchical structures at the sandstone core surface are constructed by adsorption of the modified silica nanoparticles, which leads to the effect of drag reduction to improve the low injection rate in ultra-low permeability reservoirs. - Highlights: • A micro-nanoscale hierarchical structure is formed at the reservoir rock surface. • An inversion has happened from hydrophilic into hydrophobic modified by nanofluids. • The effect of drag reduction to improve the low injection rate is realized. • The mechanism of drag reduction induced from the modified core surface was unclosed. - Abstract: Based on the adsorption behavior of modified silica nanoparticles in the sandstone core surface, the hydrophobic surface was constructed, which consists of micro-nanoscale hierarchical structure. This modified core surface presents a property of drag reduction and meets the challenge of high injection pressure and low injection rate in low or ultra-low permeability reservoir. The modification effects on the surface of silica nanoparticles and reservoir cores, mainly concerning hydrophobicity and fine structure, were determined by measurements of contact angle and scanning electron microscopy. Experimental results indicate that after successful modification, the contact angle of silica nanoparticles varies from 19.5° to 141.7°, exhibiting remarkable hydrophobic properties. These modified hydrophobic silica nanoparticles display a good adsorption behavior at the core surface to form micro-nanobinary structure. As for the wettability of these modified core surfaces, a reversal has happened from hydrophilic into hydrophobic and its contact angle increases from 59.1° to 105.9°. The core displacement experiments show that the relative permeability for water has significantly increased by an average of 40.3% via core surface modification, with the effects of reducing injection pressure and improving injection performance of water

  2. Symmetry induced peculiar Rashba effect on thallium adsorbed Si(1 1 1) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Sakamoto, Kazuyuki, E-mail: kazuyuki_sakamoto@faculty.chiba-u.jp [Department of Nanomaterials Science, Chiba University, Chiba 263-8522 (Japan); Oda, Tatsuki [Institute of Science and Engineering, Kanazawa University, Kanazawa 920-1192 (Japan); Kimura, Akio [Graduate School of Science, Hiroshima University, Higashi-Hiroshima 739-8526 (Japan); Takeichi, Yasuo [Institute for Solid State Physics, The University of Tokyo, Chiba 277-8581 (Japan); Fujii, Jun [TASC Laboratory, IOM-CNR, SS 14, km 163.5, I-34012 Trieste (Italy); Uhrberg, R.I.G. [Department of Physics, Chemistry, and Biology, Linköping University, S-581 83 Linköping (Sweden); Donath, Markus [Physikalisches Institut, Westfälische Wilhelms-Universität Münster, 48149 Münster (Germany); Yeom, Han Woong [Center for Low Dimensional Electronic Symmetry and Department of Physics, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)

    2015-05-15

    The geometric symmetry of the surface plays an important role for the spin–orbit-induced spin texture of two-dimensional electronic states. This article reviews the peculiar Rashba spins induced by a C{sub 3} symmetry, including the completely spin polarized surface states with the polarization vector oriented perpendicular to the surface, i.e. a direction that is not expected in a typical Rashba system. This review also describes that this peculiar Rashba situation has possibility to suppress backscattering and therefore to greatly improve the efficiency of spin transport, which is an essential issue in the development of high-performance semiconductor spintronic devices.

  3. Nanocrystalline-Si-dot multi-layers fabrication by chemical vapor deposition with H-plasma surface treatment and evaluation of structure and quantum confinement effects

    Directory of Open Access Journals (Sweden)

    Daisuke Kosemura

    2014-01-01

    Full Text Available 100-nm-thick nanocrystalline silicon (nano-Si-dot multi-layers on a Si substrate were fabricated by the sequential repetition of H-plasma surface treatment, chemical vapor deposition, and surface oxidation, for over 120 times. The diameter of the nano-Si dots was 5–6 nm, as confirmed by both the transmission electron microscopy and X-ray diffraction analysis. The annealing process was important to improve the crystallinity of the nano-Si dot. We investigated quantum confinement effects by Raman spectroscopy and photoluminescence (PL measurements. Based on the experimental results, we simulated the Raman spectrum using a phenomenological model. Consequently, the strain induced in the nano-Si dots was estimated by comparing the experimental and simulated results. Taking the estimated strain value into consideration, the band gap modulation was measured, and the diameter of the nano-Si dots was calculated to be 5.6 nm by using PL. The relaxation of the q ∼ 0 selection rule model for the nano-Si dots is believed to be important to explain both the phenomena of peak broadening on the low-wavenumber side observed in Raman spectra and the blue shift observed in PL measurements.

  4. Development and Experimental Study of Surface-Electrical Discharge Diamond Grinding of Al-10 wt%SiC Composite

    Science.gov (United States)

    Agrawal, Shyam Sunder; Yadava, Vinod

    2016-01-01

    As silicon carbide possesses small fracture toughness, it is difficult to grind because it leads to cracking. Metal matrix composites can be machined using electrical discharge machining (EDM) but the process is slow. Electrical discharge diamond grinding (EDDG), which consists of diamond grinding and EDM with a rotating disk which enhanced material removal rate (MRR) and produce better surface finish. This paper describes the machining characteristic of Al-SiC composite using EDDG in surface grinding configuration which is called as surface-electrical discharge diamond grinding (S-EDDG). A chain of experiments were performed on S-EDDG set up by mounting newly self designed and fabricated set up on conventional die sinking EDM machine using the approach of one parameter-at-a-time concept. Surface roughness (Ra) and MRR are taken as output parameters as both are important outcome in the manufacturing process and they materialize a major division in the manufacturing system. The effects of current, wheel speed and depth of cut is analyzed on MRR and Ra. Finally, optimization have been done through weighted principal component analysis.

  5. Repeatable change in electrical resistance of Si surface by mechanical and electrical nanoprocessing.

    Science.gov (United States)

    Miyake, Shojiro; Suzuki, Shota

    2014-01-01

    The properties of mechanically and electrically processed silicon surfaces were evaluated by atomic force microscopy (AFM). Silicon specimens were processed using an electrically conductive diamond tip with and without vibration. After the electrical processing, protuberances were generated and the electric current through the silicon surface decreased because of local anodic oxidation. Grooves were formed by mechanical processing without vibration, and the electric current increased. In contrast, mechanical processing with vibration caused the surface to protuberate and the electrical resistance increased similar to that observed for electrical processing. With sequential processing, the local oxide layer formed by electrical processing can be removed by mechanical processing using the same tip without vibration. Although the electrical resistance is decreased by the mechanical processing without vibration, additional electrical processing on the mechanically processed area further increases the electrical resistance of the surface.

  6. An improved process for the surface modification of SiO2 nanoparticles

    KAUST Repository

    Livi, Sébastien

    2012-01-01

    A phosphonium ionic liquid is used as an activator of silanol groups to improve the surface functionalization of silica nanoparticles with fluorosilanes in supercritical CO 2. © 2012 The Royal Society of Chemistry.

  7. Investigation of the ({radical}3 x {radical}3)R30{sup o}-Cu{sub 2}Si/Cu(1 1 1) surface alloy using DFT

    Energy Technology Data Exchange (ETDEWEB)

    Shuttleworth, I.G., E-mail: shuttleworth.ian@gmail.com [Jubail University College, Jubail Industrial City, 31961 (Saudi Arabia)

    2011-05-15

    The electronic structure of the FCC, HCP and 2-fold bridge phases of the ({radical}3 x {radical}3)R30{sup o}-Cu{sub 2}Si/Cu(1 1 1) surface alloy have been investigated using LCAO-DFT. Analysis of the total electron density, partial density-of-states (PDOS) and crystal orbital overlap population (COOP) curves for the system have shown a surprising similarity between the intra- and inter-layer Si-Cu bond for each phase. Low hybridization between the Si 3s and 3p orbitals results in a low directionality of the Si-Cu bond within each of phase. The Si 3s orbitals are shown to form covalent bonds with their surrounding Cu atoms whereas the Si 3p and 3d orbitals are shown to form combinations of covalent and metallic bonds. The Si-Cu interaction is shown clearly to extend to the second layer of the alloy in deference to previous studies of Si/Cu alloys.

  8. Critical Surface Parameters for the Oxidative Coupling of Methane over the Mn-Na-W/SiO2 Catalyst.

    Science.gov (United States)

    Hayek, Naseem S; Lucas, Nishita S; Warwar Damouny, Christine; Gazit, Oz M

    2017-11-22

    The work here presents a thorough evaluation of the effect of Mn-Na-W/SiO 2 catalyst surface parameters on its performance in the oxidative coupling of methane (OCM). To do so, we used microporous dealuminated β-zeolite (Zeo), or mesoporous SBA-15 (SBA), or macroporous fumed silica (Fum) as precursors for catalyst preparation, together with Mn nitrate, Mn acetate and Na 2 WO 4 . Characterizing the catalysts by inductively coupled plasma-optical emission spectroscopy, N 2 physisorption, X-ray diffraction, high-resolution scanning electron microscopy-energy-dispersive spectroscopy, X-ray photoelectron spectroscopy, and catalytic testing enabled us to identify critical surface parameters that govern the activity and C 2 selectivity of the Mn-Na-W/SiO 2 catalyst. Although the current paradigm views the phase transition of silica to α-cristobalite as the critical step in obtaining dispersed and stable metal sites, we show that the choice of precursors is equally or even more important with respect to tailoring the right surface properties. Specifically, the SBA-based catalyst, characterized by relatively closed surface porosity, demonstrated low activity and low C 2 selectivity. By contrast, for the same composition, the Zeo-based catalyst showed an open surface pore structure, which translated up to fourfold higher activity and enhanced selectivity. By varying the overall composition of the Zeo catalysts, we show that reducing the overall W concentration reduces the size of the Na 2 WO 4 species and increases the catalytic activity linearly as much as fivefold higher than the SBA catalyst. This linear dependence correlates well to the number of interfaces between the Na 2 WO 4 and Mn 2 O 3 species. Our results combined with prior studies lead us to single out the interface between Na 2 WO 4 and Mn 2 O 3 as the most probable active site for OCM using this catalyst. Synergistic interactions between the various precursors used and the phase transition are discussed in

  9. Si(111)-sq root 21 x sq root 21 -(Ag+Cs) surface studied by scanning tunneling microscopy and angle-resolved photoemission spectroscopy

    CERN Document Server

    Liu, C; Morikawa, H; Okino, H; Hasegawa, S; Okuda, T; Kinoshita, T

    2003-01-01

    Scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) were used to study the atomic and electronic structures of the Si(111)-sq root 21 x sq root 21-(Ag + Cs) surface (sq root 21-Cs in short), which was induced by depositing caesium atoms on the Si(111)-sq root 3 x sq root 3-Ag surface at room temperature (RT). Compared with previously reported STM images of noble-metal induced sq root 21 x sq root 21 phases including the Si(111)-sq root 21 x sq root 21-(Ag+Ag) and Si(111)-sq root 21 x sq root 21-(Ag+Au) surfaces (sq root 21-Ag and sq root 21-Au, respectively), the sq root 21-Cs surface displayed quite different features in STM images. The ARPES data of the sq root 21-Cs surface revealed an intrinsic dispersive surface-state band, together with a non-dispersive one near the Fermi level, which was also different from those of the sq root 21-Ag and sq root 21-Au surfaces. These results strongly suggest different atomic arrangements between Cs- and noble-metal induced sq root ...

  10. Characteristics of epoxy resin/SiO2 nanocomposite insulation: effects of plasma surface treatment on the nanoparticles.

    Science.gov (United States)

    Yan, Wei; Phung, B T; Han, Zhao Jun; Ostrikov, Kostya

    2013-05-01

    The present study compares the effects of two different material processing techniques on modifying hydrophilic SiO2 nanoparticles. In one method, the nanoparticles undergo plasma treatment by using a custom-developed atmospheric-pressure non-equilibrium plasma reactor. With the other method, they undergo chemical treatment which grafts silane groups onto their surface and turns them into hydrophobic. The treated nanoparticles are then used to synthesize epoxy resin-based nanocomposites for electrical insulation applications. Their characteristics are investigated and compared with the pure epoxy resin and nanocomposite fabricated with unmodified nanofillers counterparts. The dispersion features of the nanoparticles in the epoxy resin matrix are examined through scanning electron microscopy (SEM) images. All samples show evidence that the agglomerations are smaller than 30 nm in their diameters. This indicates good dispersion uniformity. The Weibull plot of breakdown strength and the recorded partial discharge (PD) events of the epoxy resin/plasma-treated hydrophilic SiO2 nanocomposite (ER/PTI) suggest that the plasma-treated specimen yields higher breakdown strength and lower PD magnitude as compared to the untreated ones. In contrast, surprisingly, lower breakdown strength is found for the nanocomposite made by the chemically treated hydrophobic particles, whereas the PD magnitude and PD numbers remain at a similar level as the plasma-treated ones.

  11. Integrated ZnO Nano-Electron-Emitter with Self-Modulated Parasitic Tunneling Field Effect Transistor at the Surface of the p-Si/ZnO Junction

    Science.gov (United States)

    Cao, Tao; Luo, Laitang; Huang, Yifeng; Ye, Bing; She, Juncong; Deng, Shaozhi; Chen, Jun; Xu, Ningsheng

    2016-01-01

    The development of high performance nano-electron-emitter arrays with well reliability still proves challenging. Here, we report a featured integrated nano-electron-emitter. The vertically aligned nano-emitter consists of two segments. The top segment is an intrinsically lightly n-type doped ZnO nano-tip, while the bottom segment is a heavily p-type doped Si nano-pillar (denoted as p-Si/ZnO nano-emitter). The anode voltage not only extracted the electron emission from the emitter apex but also induced the inter-band electron tunneling at the surface of the p-Si/ZnO nano-junction. The designed p-Si/ZnO emitter is equivalent to a ZnO nano-tip individually ballasted by a p-Si/ZnO diode and a parasitic tunneling field effect transistor (TFET) at the surface of the p-Si/ZnO junction. The parasitic TFET provides a channel for the supply of emitting electron, while the p-Si/ZnO diode is benefit for impeding the current overloading and prevent the emitters from a catastrophic breakdown. Well repeatable and stable field emission current were obtained from the p-Si/ZnO nano-emitters. High performance nano-emitters was developed using diamond-like-carbon coated p-Si/ZnO tip array (500 × 500), i.e., 178 μA (4.48 mA/cm2) at 75.7 MV/m. PMID:27654068

  12. Growth of CdTe on Si(100) surface by ionized cluster beam technique: Experimental and molecular dynamics simulation

    Energy Technology Data Exchange (ETDEWEB)

    Araghi, Houshang, E-mail: araghi@aut.ac.ir [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Zabihi, Zabiholah [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Nayebi, Payman [Department of Physics, College of Technical and Engineering, Saveh Branch, Islamic Azad University, Saveh (Iran, Islamic Republic of); Ehsani, Mohammad Mahdi [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of)

    2016-10-15

    II–VI semiconductor CdTe was grown on the Si(100) substrate surface by the ionized cluster beam (ICB) technique. In the ICB method, when vapors of solid materials such as CdTe were ejected through a nozzle of a heated crucible into a vacuum region, nanoclusters were created by an adiabatic expansion phenomenon. The clusters thus obtained were partially ionized by electron bombardment and then accelerated onto the silicon substrate at 473 K by high potentials. The cluster size was determined using a retarding field energy analyzer. The results of X-ray diffraction measurements indicate the cubic zinc blende (ZB) crystalline structure of the CdTe thin film on the silicon substrate. The CdTe thin film prepared by the ICB method had high crystalline quality. The microscopic processes involved in the ICB deposition technique, such as impact and coalescence processes, have been studied in detail by molecular dynamics (MD) simulation.

  13. Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces

    International Nuclear Information System (INIS)

    Portavoce, A; Kammler, M; Hull, R; Reuter, M C; Ross, F M

    2006-01-01

    We investigate the fundamental mechanism by which self-assembled Ge islands can be nucleated at specific sites on Si(001) using ultra-low-dose focused ion beam (FIB) pre-patterning. Island nucleation is controlled by a nanotopography that forms after the implantation of Ga ions during subsequent thermal annealing of the substrate. This nanotopography evolves during the annealing stage, changing from a nanoscale annular depression associated with each focused ion beam spot to a nanoscale pit, and eventually disappearing (planarizing). The correspondence of Ge quantum dot nucleation sites to the focused ion beam features requires a growth surface upon which the nanotopography is preserved. A further key observation is that the Ge wetting layer thickness is reduced in patterned regions, allowing the formation of islands on the templated regions without nucleation elsewhere. These results provide routes to the greatly enhanced design and control of quantum dot distributions and dimensions

  14. The electrical, elemental, optical, and surface properties of Si-doped ZnO thin films prepared by thermionic vacuum arc

    Science.gov (United States)

    Mohammadigharehbagh, Reza; Özen, Soner; Yudar, Hafizittin Hakan; Pat, Suat; Korkmaz, Şadan

    2017-09-01

    The purpose of this work is to study the properties of Si-doped ZnO (SZO) thin films, which were prepared using the non-reactive thermionic vacuum arc technique. The analysis of the elemental, optical, and surface properties of ZnO:Si thin films was carried out using energy dispersive x-ray spectroscopy, UV-VIS spectrophotometry, atomic force microscopy, and scanning electron microscopy, respectively. The current-voltage measurement was employed in order to study the electrical properties of the films. The effect of Si doping on the physical properties of ZnO films was investigated. The film thicknesses were measured as 55 and 35 nm for glass and PET substrates, respectively. It was clearly observed from the x-ray diffraction results that the Si and ZnO peaks were present in the coated SZO films for all samples. The morphological studies showed that the deposited surfaces are homogenous, dense, and have a uniform surface, with the existence of some cracks only on the glass substrate. The elemental composition has confirmed the existence of Zn, Si, and O elements within the prepared films. Using a UV-VIS spectrophotometer, the optical parameters such as transmittance, absorbance, refractive index, and reflectance were calculated. It should be noted that the transparency and refractive indices obtained from the measurements decrease with increasing Si concentration. The obtained optical bandgap values using transmittance spectra were determined to be 3.74 and 3.84 eV for the glass and PET substrates, respectively. An increase in the bandgap results demonstrates that the Si doping concentration is comparable to the pure ZnO thin films. The current versus voltage curves revealed the ohmic nature of the films. Subsequently, the development and fabrication of excellent transparent conducting electrodes enabled the appropriate use of Si-doped ZnO thin films.

  15. Influence of chemical additives on the surface reactivity of Si in KOH solution

    NARCIS (Netherlands)

    Philipsen, H.G.G.; Kelly, J.J.

    2009-01-01

    It is known that the electrochemistry of silicon in alkaline solution is closely linked to the anisotropic etching of the semiconductor. In this work the influence of two commonly used additives, hydrogen peroxide and isopropyl alcohol, on the surface chemistry of silicon in KOH solution was

  16. Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation

    Science.gov (United States)

    Liao, B.; Stangl, R.; Ma, F.; Mueller, T.; Lin, F.; Aberle, A. G.; Bhatia, C. S.; Hoex, B.

    2013-09-01

    We demonstrate that by using a water (H2O)-based thermal atomic layer deposited (ALD) aluminum oxide (Al2O3) film, excellent surface passivation can be attained on planar low-resistivity silicon wafers. Effective carrier lifetime values of up to 12 ms and surface recombination velocities as low as 0.33 cm s-1 are achieved on float-zone wafers after a post-deposition thermal activation of the Al2O3 passivation layer. This post-deposition activation is achieved using an industrial high-temperature firing process which is commonly used for contact formation of standard screen-printed silicon solar cells. Neither a low-temperature post-deposition anneal nor a silicon nitride capping layer is required in this case. Deposition temperatures in the 100-400 °C range and peak firing temperatures of about 800 °C (set temperature) are investigated. Photoluminescence imaging shows that the surface passivation is laterally uniform. Corona charging and capacitance-voltage measurements reveal that the negative fixed charge density near the AlOx/c-Si interface increases from 1.4 × 1012 to 3.3 × 1012 cm-2 due to firing, while the midgap interface defect density reduces from 3.3 × 1011 to 0.8 × 1011 cm-2 eV-1. This work demonstrates that direct firing activation of thermal ALD Al2O3 is feasible, which could be beneficial for solar cell manufacturing.

  17. Peierls instability as the insulating origin of the Na/Si(111)-(3 × 1) surface with a Na coverage of 2/3 monolayers

    Science.gov (United States)

    Kang, Myung Ho; Kwon, Se Gab; Jung, Sung Chul

    2018-03-01

    Density functional theory (DFT) calculations are used to investigate the insulating origin of the Na/Si(111)-(3 × 1) surface with a Na coverage of 2/3 monolayers. In the coverage definition, one monolayer refers to one Na atom per surface Si atom, so this surface contains an odd number of electrons (i.e., three Si dangling-bond electrons plus two Na electrons) per 3 × 1 unit cell. Interestingly, this odd-electron surface has been ascribed to a Mott-Hubbard insulator to account for the measured insulating band structure with a gap of about 0.8 eV. Here, we instead propose a Peierls instability as the origin of the experimental band gap. The concept of Peierls instability is fundamental in one-dimensional metal systems but has not been taken into account in previous studies of this surface. Our DFT calculations demonstrate that the linear chain structure of Si dangling bonds in this surface is energetically unstable with respect to a × 2 buckling modulation, and the buckling-induced band gap of 0.79 eV explains well the measured insulating nature.

  18. Structural study of SiC(0 0 0 1)3x3 surface by surface X-ray diffraction

    International Nuclear Information System (INIS)

    Aoyama, T.; Akimoto, K.; Ichimiya, A.; Hisada, Y.; Mukainakano, S.; Emoto, T.; Tajiri, H.; Takahashi, T.; Sugiyama, H.; Zhang, X.; Kawata, H.

    2003-01-01

    Surface structure of 6H-SiC(0 0 0 1)3x3 reconstruction has been studied by grazing incidence X-ray diffraction with synchrotron radiation. We compared the Patterson map obtained from experimental structure factors with calculated Patterson maps estimated from the models that had been proposed. As the result, the calculated Patterson maps of Kulakov et al.'s [Surf. Sci. 346 (1996) 49] and Starke and coworkers' models [Phys. Rev. Lett. 80 (1998) 758; Phys. Rev. B 58 (1998) 10806; Surf. Rev. Lett. 6 (1999) 1129; Appl. Surf. Sci. 162-163 (2000) 9; Phys. Rev. B 62 (2000) 10335] are relatively in good agreement with experimental one. Therefore, we conclude that there is high possibility that either Kulakov et al.'s or Starke and coworkers' models are reasonable as the actual 3x3 structure

  19. Structural study of SiC(0 0 0 1)3x3 surface by surface X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Aoyama, T.; Akimoto, K.; Ichimiya, A.; Hisada, Y.; Mukainakano, S.; Emoto, T.; Tajiri, H.; Takahashi, T.; Sugiyama, H.; Zhang, X.; Kawata, H

    2003-06-30

    Surface structure of 6H-SiC(0 0 0 1)3x3 reconstruction has been studied by grazing incidence X-ray diffraction with synchrotron radiation. We compared the Patterson map obtained from experimental structure factors with calculated Patterson maps estimated from the models that had been proposed. As the result, the calculated Patterson maps of Kulakov et al.'s [Surf. Sci. 346 (1996) 49] and Starke and coworkers' models [Phys. Rev. Lett. 80 (1998) 758; Phys. Rev. B 58 (1998) 10806; Surf. Rev. Lett. 6 (1999) 1129; Appl. Surf. Sci. 162-163 (2000) 9; Phys. Rev. B 62 (2000) 10335] are relatively in good agreement with experimental one. Therefore, we conclude that there is high possibility that either Kulakov et al.'s or Starke and coworkers' models are reasonable as the actual 3x3 structure.

  20. Sharp transition from ripple patterns to a flat surface for ion beam erosion of Si with simultaneous co-deposition of iron

    Directory of Open Access Journals (Sweden)

    K. Zhang

    2012-09-01

    Full Text Available We investigate pattern formation on Si by sputter erosion under simultaneous co-deposition of Fe atoms, both at off-normal incidence, as function of the Fe surface coverage. The patterns obtained for 5 keV Xe ion irradiation at 30° incidence angle are analyzed with atomic force microscopy. Rutherford backscattering spectroscopy of the local steady state Fe content of the Fe-Si surface layer allows a quantitative correlation between pattern type and Fe coverage. With increasing Fe coverage the patterns change, starting from a flat surface at low coverage (1.8×1016 Fe/cm2. Our results confirm the observations by Macko et al. for 2 keV Kr ion irradiation of Si with Fe co-deposition. In particular, we also find a sharp transition from pronounced ripple patterns with large amplitude (rms roughness ∼ 18 nm to a rather flat surface (rms roughness ∼ 0.5 nm. Within this transition regime, we also observe the formation of pill bug structures, i.e. individual small hillocks with a rippled structure on an otherwise rather flat surface. The transition occurs within a very narrow regime of the steady state Fe surface coverage between 1.7 and 1.8×1016 Fe/cm2, where the composition of the mixed Fe-Si surface layer of about 10 nm thickness reaches the stoichiometry of FeSi2. Phase separation towards amorphous iron silicide is assumed as the major contribution for the pattern formation at lower Fe coverage and the sharp transition from ripple patterns to a flat surface.

  1. Impact of dielectric parameters on the reflectivity of 3C–SiC wafers with a rough surface morphology in the reststrahlen region

    Energy Technology Data Exchange (ETDEWEB)

    Engelbrecht, J.A.A., E-mail: Japie.Engelbrecht@nmmu.ac.za [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Janzén, E.; Henry, A. [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Rooyen, I.J. van [Fuel Performance and Design Department, Idaho National Laboratory, PO Box 1625, Idaho Falls, ID 83415-6188 (United States)

    2014-04-15

    A layer-on-substrate model is used to obtain the infrared reflectance for 3C–SiC with a rough surface morphology. The effect of varying dielectric parameters of the “damaged layer” on the observed reflectivity of the 3C–SiC in the reststrahlen region is assessed. Different simulated reflectance spectra are obtained to those if the dielectric parameters of the “substrate” were varied. Most notable changes in the shape of the simulated reststrahlen peak are observed for changes in the high frequency dielectric constant, the phonon damping constant, the phonon frequencies and “thickness” of damaged surface layer.

  2. Impact of dielectric parameters on the reflectivity of 3C–SiC wafers with a rough surface morphology in the reststrahlen region

    International Nuclear Information System (INIS)

    Engelbrecht, J.A.A.; Janzén, E.; Henry, A.; Rooyen, I.J. van

    2014-01-01

    A layer-on-substrate model is used to obtain the infrared reflectance for 3C–SiC with a rough surface morphology. The effect of varying dielectric parameters of the “damaged layer” on the observed reflectivity of the 3C–SiC in the reststrahlen region is assessed. Different simulated reflectance spectra are obtained to those if the dielectric parameters of the “substrate” were varied. Most notable changes in the shape of the simulated reststrahlen peak are observed for changes in the high frequency dielectric constant, the phonon damping constant, the phonon frequencies and “thickness” of damaged surface layer.

  3. Influence of the Localization of Ge Atoms within the Si(001(4 × 2 Surface Layer on Semicore One-Electron States

    Directory of Open Access Journals (Sweden)

    Olha I. Tkachuk

    2016-03-01

    Full Text Available Adsorption complexes of germanium on the reconstructed Si(001(4 × 2 surface have been simulated by the Si96Ge2Н84 cluster. For Ge atoms located on the surface layer, DFT calculations (B3LYP/6-31G** of their 3d semicore-level energies have shown a clear-cut correlation between the 3d5/2 chemical shifts and mutual arrangement of Ge atoms. Such a shift is positive when only one Ge atom penetrates into the crystalline substrate, while being negative for both penetrating Ge atoms. We interpret these results in terms of the charge distribution in clusters under consideration.

  4. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    Science.gov (United States)

    Kaushik, Priya Darshni; Ivanov, Ivan G.; Lin, Pin-Cheng; Kaur, Gurpreet; Eriksson, Jens; Lakshmi, G. B. V. S.; Avasthi, D. K.; Gupta, Vinay; Aziz, Anver; Siddiqui, Azher M.; Syväjärvi, Mikael; Yazdi, G. Reza

    2017-05-01

    In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 1013 ions/cm2). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and spintronic applications.

  5. Tunable wideband-directive thermal emission from SiC surface using bundled graphene sheets

    Science.gov (United States)

    Inampudi, Sandeep; Mosallaei, Hossein

    2017-09-01

    Coherent thermal radiation emitters based on diffraction gratings inscribed on surface of a polar material, such as silicon carbide, always possess high angular dispersion resulting in wideband-dispersive or monochromatic-directive emission. In this paper, we identify roots of the high angular dispersion as the rapid surface phonon polariton (SPhP) resonance of the material surface and the misalignment of the dispersion curve of the diffraction orders of the grating with respect to light line. We minimize the rapid variation of SPhP resonance by compensating the material dispersion using bundled graphene sheets and mitigate the misalignment by a proper choice of the grating design. Utilizing a modified form of rigorous coupled wave analysis to simultaneously incorporate atomic-scale graphene sheets and bulk diffraction gratings, we accurately compute the emissivity profiles of the composite structure and demonstrate reduction in the angular dispersion of thermal emission from as high as 30∘ to as low as 4∘ in the SPhP dominant wavelength range of 11-12 μ m . In addition, we demonstrate that the graphene sheets via their tunable optical properties allow a fringe benefit of dynamical variation of the angular dispersion to a wide range.

  6. Adsorption and combing of DNA on HOPG surfaces of bulk crystals and nanosheets: application to the bridging of DNA between HOPG/Si heterostructures

    International Nuclear Information System (INIS)

    Rose, F; Martin, P; Fujita, H; Kawakatsu, H

    2006-01-01

    Controlled and reproducible combing of λ-phage DNA molecules can be realized in predetermined orientations on highly oriented pyrolitic graphite (HOPG) surfaces. Observations by atomic force microscopy (AFM) show that DNA adsorption onto HOPG surfaces leads to different hierarchical organizations such as balls, networks, films, and fractal structures. HOPG nanosheets (3.5-100 nm thick) were created by simply rubbing a HOPG crystal onto a silicon oxide surface, and then patterned with a focused ion beam (FIB) to fabricate HOPG/Si heterostructures (arrays of silicon micropillars and microtracks decorated on their top surface with HOPG nanosheets). The surface reactivity of HOPG nanosheets toward DNA is found to be the same as of HOPG bulk crystals. Finally, combing is used to attach and suspend bundles of approximately 20-50 DNA molecules between HOPG/Si heterostructures

  7. Wear-triggered self-healing behavior on the surface of nanocrystalline nickel aluminum bronze/Ti3SiC2 composites

    Science.gov (United States)

    Zhai, Wenzheng; Lu, Wenlong; Zhang, Po; Wang, Jian; Liu, Xiaojun; Zhou, Liping

    2018-04-01

    Self-healing can protect materials from diverse damages, but is intrinsically difficult in metals. This paper demonstrates a potential method through a simultaneous decomposition and oxidation of Ti3SiC2 to achieve healing of stress cracking on the surface of nickel aluminum bronze (NAB)/Ti3SiC2 nanocrystalline composites during fretting wear. At the finest nanocrystalline materials, a crack recovery would be attained at 76.5%. The repetitive fretting wear leads to a modest amount of 'flowability' of Ti3SiC2 toward the crack, facilitating crack recovery. Along with the wear-triggered self-healing, the NAB/Ti3SiC2 shows an improved tribological performance with the stable decreased friction torque due to the formation of lubrication TiO2 oxide.

  8. Preparation of crosslinked polysiloxane/SiO{sub 2} nanocomposite via in-situ condensation and its surface modification on cotton fabrics

    Energy Technology Data Exchange (ETDEWEB)

    Hao, Lifen, E-mail: haolifen@sust.edu.cn [College of Chemistry and Chemical Engineering, Shaanxi University of Science and Technology, Xi' an, Shaanxi 710021 (China); Zibo Dahuanjiu Polygrace Tannery Group Co. Ltd., Zibo, Shandong 256400 (China); Gao, Tingting [College of Chemistry and Chemical Engineering, Shaanxi University of Science and Technology, Xi' an, Shaanxi 710021 (China); Xu, Wei [College of Resource and Environment, Shaanxi University of Science and Technology, Xi' an, Shaanxi 710021 (China); Zibo Dahuanjiu Polygrace Tannery Group Co. Ltd., Zibo, Shandong 256400 (China); Wang, Xuechuan [College of Resource and Environment, Shaanxi University of Science and Technology, Xi' an, Shaanxi 710021 (China); Yang, Shuqin; Liu, Xiangguo [Zibo Dahuanjiu Polygrace Tannery Group Co. Ltd., Zibo, Shandong 256400 (China)

    2016-05-15

    Highlights: • We used a two-step method to fabricate novel crosslinked polysiloxane/SiO{sub 2} nanocomposite (CLPS-SiO{sub 2}). • Superhydrophobic surface on cotton fiber can be conveniently constructed by CLPS-SiO{sub 2}. • Color and softness of the CLPS-SiO{sub 2} treated fabric would not be influenced at all. • The CLPS-SiO{sub 2} treated fabric possessed good washing durability. - Abstract: Novel crosslinked polysiloxane/SiO{sub 2} nanocomposite (CLPS-SiO{sub 2}) was successfully prepared via the in-situ condensation reaction of silica sols and crosslinked polysiloxane with end-capped triethoxysilane in solvent, which was firstly fabricated through the modification of our previously developed crosslinked polysiloxane with end-capped epoxy groups using aminopropyltriethoxysilane (APTES) and noted as APTES-CLPS. Chemical structures and thermal properties of the as-prepared resultants were characterized by Fourier transform infrared spectroscopy (FTIR), nuclear magnetic resonance spectra ({sup 1}H/{sup 13}C NMR) and thermogravimetric analysis (TGA). CLPS-SiO{sub 2} was applied as surface modification agent to treat cotton fabrics. Film morphologies and surface properties were examined with scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), contact angle measurements, and other instruments. FTIR and NMR confirmed structure of the products. CLPS-SiO{sub 2} showed better thermal stability than APTES-CLPS due to anchor of the nanosilica. APTES-CLPS could deposit a smooth film on cotton fiber surface. Besides, CLPS-SiO{sub 2} also coated the fibers with many nano-scaled tubercles beneath this smooth film by SEM. However, the APTES-CLPS film and the CLPS-SiO{sub 2} film on silicon-wafer were never homogeneous and had a few low or high peaks. The root mean square roughness (Rq) of APTES-CLPS film reached to 0.441 nm in 2 × 2 μm{sup 2} scanning field and at 5 nm data scale. Owing to the incorporation of

  9. A global ab initio potential energy surface for the X{sup  2}A{sup ′} ground state of the Si + OH → SiO + H reaction

    Energy Technology Data Exchange (ETDEWEB)

    Dayou, Fabrice, E-mail: fabrice.dayou@obspm.fr [Laboratoire d' Etude du Rayonnement et de la Matière en Astrophysique (UMR 8112 du CNRS), Observatoire de Paris-Meudon, Université Pierre et Marie Curie, 92195 Meudon Cedex (France); Duflot, Denis; Rivero-Santamaría, Alejandro; Monnerville, Maurice [Laboratoire de Physique des Lasers, Atomes et Molécules (UMR 8523 du CNRS), Université Lille I Sciences et Technologies, 59655 Villeneuve d' Ascq Cedex (France)

    2013-11-28

    We report the first global potential energy surface (PES) for the X{sup  2}A{sup ′} ground electronic state of the Si({sup 3}P) + OH(X{sup 2}Π) → SiO(X{sup 1}Σ{sub g}{sup +}) + H({sup 2}S) reaction. The PES is based on a large number of ab initio energies obtained from multireference configuration interaction calculations plus Davidson correction (MRCI+Q) using basis sets of quadruple zeta quality. Corrections were applied to the ab initio energies in the reactant channel allowing a proper description of long-range interactions between Si({sup 3}P) and OH(X{sup 2}Π). An analytical representation of the global PES has been developed by means of the reproducing kernel Hilbert space method. The reaction is found barrierless. Two minima, corresponding to the SiOH and HSiO isomers, and six saddle points, among which the isomerization transition state, have been characterized on the PES. The vibrational spectra of the SiOH/HSiO radicals have been computed from second-order perturbation theory and quantum dynamics methods. The structural, energetic, and spectroscopic properties of the two isomers are in good agreement with experimental data and previous high quality calculations.

  10. Ultra-high vacuum scanning tunnelling microscopy investigation of free radical adsorption to the Si(111)-7 x 7 surface

    Energy Technology Data Exchange (ETDEWEB)

    Guisinger, Nathan P; Elder, Shaun P; Yoder, Nathan L; Hersam, Mark C [Materials Science and Engineering Department, Northwestern University, 2220 Campus Drive, Evanston, IL 60208-3108 (United States)

    2007-01-31

    Room-temperature ultra-high vacuum (UHV) scanning tunnelling microscopy (STM) has been employed to investigate free radical chemistry on the Si(111)-7 x 7 surface with atomic-scale spatial resolution. In particular, due to its single-site binding mechanism and extensive previous study on the Si(100)-2 x 1 surface, the nitroxyl free radical 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO) was explored. UHV STM imaging of isolated molecules revealed that TEMPO covalently reacts with adatom dangling bonds with high affinity. By monitoring TEMPO adsorption as a function of surface coverage, TEMPO was also found to preferentially bind to centre adatom sites at the initial stages of adsorption. On the other hand, as the surface coverage increased, TEMPO molecules adsorbed to centre adatoms and corner adatoms approached a ratio of 1:1. At all surface coverage levels, TEMPO showed minimal preference for binding to either the faulted or unfaulted half of the unit cell. Consequently, upon saturation, the TEMPO adlayer exhibited long-range ordering and preserved the underlying 7 x 7 surface reconstruction. This study provides fundamental insight into free radical surface chemistry and suggests a direct pathway for forming nearly perfectly ordered organic adlayers on the Si(111)-7 x 7 surface.

  11. The use of a well-defined surface organometallic complex as a probe molecule: [(≡SiO)TaVCl2Me2] shows different isolated silanol sites on the silica surface

    KAUST Repository

    Chen, Yin

    2014-01-01

    TaVCl2Me3 reacts with silica(700) and produces two different [(≡SiO)TaVCl2Me2] surface organometallic species, suggesting a heterogeneity of the highly dehydroxylated silica surface, which was studied with a combined experimental and theoretical approach. This journal is © the Partner Organisations 2014.

  12. Investigations of the corrosion behaviour of the Si-containing stainless steel 1.4361 with combined surface analysis, electrochemistry and radionuclide technique

    International Nuclear Information System (INIS)

    Maar-Stumm, M.

    1990-03-01

    The present work aimed at detailed information on the corrosion behaviour and particularly the corrosion mechanism of the steel 1.4361 in concentrated nitric acid by use of a combination of electrochemical methods, radionuclide technique and surface analysis. For comparison steel samples corroded by other methods were investigated by surface analysis, too. At the beginning of the corrosion in nitric acid Fe and Ni are dissolved preferentially. Cr and Si are enriched in the surface region. A primary corrosion layer is formed which is equivalent to the oxidic overlayer of atmospherically oxidized samples. It consists of the oxides of chromium and iron mixed up with glass-like SiO 2 . Ni does not contribute to the formation of the oxidic overlayer. On top of this primary corrosion layer there is an isolating gel-like SiO 2 -layer with a thickness depending on strength and duration of the corrosive attack. Its mechanical stability decreases with increasing layer thickness. At the boundary to the primary corrosion layer this gel-like SiO 2 -layer is closed, mechanically stable and conducting. Samples corroded under the standardized conditions of the Huey-test show a similar structure of the overlayer with the exception that the primary corrosion layer consists only of glass-like SiO 2 . The combination of several methods revealed detailed information about mass loss and structure of the overlayer at different electrode potentials. (orig./MM) [de

  13. Deposition of SiC x H y O z thin film on epoxy resin by nanosecond pulsed APPJ for improving the surface insulating performance

    Science.gov (United States)

    Qing, XIE; Haofan, LIN; Shuai, ZHANG; Ruixue, WANG; Fei, KONG; Tao, SHAO

    2018-02-01

    Non-thermal plasma surface modification for epoxy resin (EP) to improve the insulation properties has wide application prospects in gas insulated switchgear and gas insulated transmission line. In this paper, a pulsed Ar dual dielectrics atmospheric-pressure plasma jet (APPJ) was used for SiC x H y O z thin film deposition on EP samples. The film deposition was optimized by varying the treatment time while other parameters were kept at constants (treatment distance: 10 mm, precursor flow rate: 0.6 l min-1, maximum instantaneous power: 3.08 kW and single pulse energy: 0.18 mJ). It was found that the maximum value of flashover voltages for negative and positive voltage were improved by 18% and 13% when the deposition time was 3 min, respectively. The flashover voltage reduced as treatment time increased. Moreover, all the surface conductivity, surface charge dissipation rate and surface trap level distribution reached an optimal value when thin film deposition time was 3 min. Other measurements, such as atomic force microscopy and scanning electron microscope for EP surface morphology, Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy for EP surface compositions, optical emission spectra for APPJ deposition process were carried out to better understand the deposition processes and mechanisms. The results indicated that the original organic groups (C-H, C-C, C=O, C=C) were gradually replaced by the Si containing inorganic groups (Si-O-Si and Si-OH). The reduction of C=O in ester group and C=C in p-substituted benzene of the EP samples might be responsible for shallowing the trap level and then enhancing the flashover voltage. However, when the plasma treatment time was longer than 3 min, the significant increase of the surface roughness might increase the trap level depth and then deteriorate the flashover performance.

  14. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks

    Science.gov (United States)

    Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

    2015-03-01

    In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 1012 to 1 × 1012 cm-2 eV-1, the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 1012 cm-2 for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

  15. Dynamics of surface-migration: Electron-induced reaction of 1,2-dihaloethanes on Si(100)

    Science.gov (United States)

    Huang, Kai; MacLean, Oliver; Guo, Si Yue; McNab, Iain R.; Ning, Zhanyu; Wang, Chen-Guang; Ji, Wei; Polanyi, John C.

    2016-10-01

    Scanning Tunneling Microscopy was used to investigate the electron-induced reaction of 1,2-dibromoethane (DBE) and 1,2-dichloroethane (DCE) on Si(100).We observed a long-lived physisorbed molecular state of DBE at 75 K and of DCE at 110 K. As a result we were able to characterize by experiment and also by ab initio theory the dynamics of ethylene production in the electron-induced surface-reaction of these physisorbed species. For both DBE and DCE the ethylene product was observed to migrate across the surface. In the case of DBE the recoil of the ethylene favored the silicon rows, migrating by an average distance of 22 Å, and up to 100 Å. Trajectory calculations were performed for this electron-induced reaction, using an 'Impulsive Two-State' model involving an anionic excited state and a neutral ground-potential. The model agreed with experiment in reproducing both migration and desorption of the ethylene product. The computed migration exhibited a 'ballistic' launch and subsequent 'bounces', thereby accounting for the observed long-range migratory dynamics.

  16. High Performance of PEDOT:PSS/n-Si Solar Cells Based on Textured Surface with AgNWs Electrodes

    Science.gov (United States)

    Jiang, Xiangyu; Zhang, Pengbo; Zhang, Juan; Wang, Jilei; Li, Gaofei; Fang, Xiaohong; Yang, Liyou; Chen, Xiaoyuan

    2018-02-01

    Hybrid heterojunction solar cells (HHSCs) have gained extensive research and attention due to simple device structure and low-cost technological processes. Here, HHSCs are presented based on a highly transparent conductive polymer poly(3,4ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) directly spin-coated on an n-type crystalline silicon with microscale surface textures, which are prepared by traditional chemical etching. We have studied interface properties between PEDOT:PSS and textured n-Si by varying coating conditions. Final power conversion efficiency (PCE) could arrive at 8.54% by these simple solution-based fabrication processes. The high conversion efficiency is attributed to the fully conformal contact between PEDOT:PSS film and textured silicon. Furthermore, the reflectance of the PEDOT:PSS layer on textured surface is analyzed by changing film thickness. In order to improve the performance of the device, silver nanowires were employed as electrodes because of its better optical transmittance and electrical conductivity. The highest PCE of 11.07% was achieved which displayed a 29.6% enhancement compared with traditional silver electrodes. These findings imply that the combination of PEDOT:PSS film and silver nanowire transparent electrodes pave a promising way for realizing high-efficiency and low-cost solar cells.

  17. [Research on the Relationship between Surface Structure and Fluorescence Intensity of Ca(1-x)Al2Si2O8 : Eu(x)].

    Science.gov (United States)

    He, Xiao; Zhang, Li-sheng; Zu, En-dong; Yang, Xiao-yun; Dong, Kun

    2016-01-01

    Ca(1-x)Al2Si2O8 : Eu(x)(x = 0, 0.01, 0.05, 0.15) were synthesized by solid-state reaction respectively at 1 150, 1 250 1350 and 1 450 degrees C. With X-ray diffraction(XRD), Raman spectroscopy(Raman), photoluminescence spectroscopy(PL) and X-ray fluorescence spectrometer(XRF), the relationship between surface structure and fluorescence intensity of Ca(1-x) Al2Si2O8: Eu(x) were studied. XRD and Raman results show that, CaAl2Si2O8 anorthite single-phase has formed gradually along with the temperature rising in the process of synthesis. Raman spectroscopy is clear that when the Eu doping amount is the same, Si-O amorphous phase disappear gradually and the CaAl2Si2O8 phase form gradually with the temperature increases. As the temperature increases, vibration peaks position silicon oxygen tetrahedron shift to lower wave number. When 1 450 degrees C, the temperature is too high to destroy the structure of silicon oxygen tetrahedron. At the same time, there is a broadening amorphous peak appears in Raman spectroscopy. The procedure of Al to replace Si is hindered with Eu doped in. It is the result that the peak at 1 620 cm(-1) decreases after the first increases. The change of surface structure associated with the scattering amount of Eu. PL and XRF results show that: as the temperature increases, the amount of Eu atom scattering on the material surface increases gradually, this change lead to the fluorescence intensity raise. Therefore, there is proportional relationship between the fluorescence intensity of the samples and the number of samples per unit surface area of Eu atoms.

  18. Ab initio molecular dynamics study of ethylene adsorption onto Si(001) surface: short-time Fourier transform analysis of structural coordinate autocorrelation function.

    Science.gov (United States)

    Lee, Yung Ting; Lin, Jyh Shing

    2013-12-05

    The reaction dynamics of ethylene adsorption onto the Si(001) surface have been studied by combining density functional theory-based molecular dynamics simulations with molecular adsorption sampling scheme for investigating all kinds of reaction pathways and corresponding populations. Based on the calculated results, three possible reaction pathways--the indirect adsorption, the direct adsorption, and the repelling reaction--have been found. First, the indirect adsorption, in which the ethylene (C2H(4(ads))) forms the π-bonded C2H(4(ads)) with the buckled-down Si atom to adsorb on the Si(001) surface and then turns into the di-σ-bonded C2H(4(ads)), is the major reaction pathway. The short-time Fourier transform analysis of structural coordinate autocorrelation function is performed to further investigate the evolution of different vibrational modes along this indirect reaction pathway. This analysis illustrates that the Infrared (IR) inactive peak of the C=C stretching mode of the π-bonded C2 H4(ads) shifts to the IR inactive peak of the C-C stretching mode of di-σ-bonded C2H(4(ads)), which is in a good agreement with the IR inactive peak of the C=C stretching mode vanished in the vibrational spectrum at 150 K (Nagao et al., J. Am. Chem. Soc. 2004, 126, 9922). Second, the direct adsorption, in which the di-σ-bonded C2H(4(ads)) is formed directly with the Si intradimer or the Si interdimer on the Si(001) surface, is the less significant reaction pathway. This reaction pathway leads to the C-C stretching mode and the C-H stretching mode of the di-σ-bonded C2H(4(ads)) appeared in the vibrational spectra at 48 and 150 K, respectively (Nagao et al., J. Am. Chem. Soc. 2004, 126, 9922). Finally, the repelling reaction, in which the C2H(4(g)) first interacts with the Si dimer and then is repelled by Si atoms, is the least important reaction pathway. Consequently, neither the π-bonded C2H(4(ads)) nor the di-σ-bonded C2H(4(ads)) is formed on the Si(001) surface

  19. SERS activity of Ag decorated nanodiamond and nano-β-SiC, diamond-like-carbon and thermally annealed diamond thin film surfaces.

    Science.gov (United States)

    Kuntumalla, Mohan Kumar; Srikanth, Vadali Venkata Satya Siva; Ravulapalli, Satyavathi; Gangadharini, Upender; Ojha, Harish; Desai, Narayana Rao; Bansal, Chandrahas

    2015-09-07

    In the recent past surface enhanced Raman scattering (SERS) based bio-sensing has gained prominence owing to the simplicity and efficiency of the SERS technique. Dedicated and continuous research efforts have been made to develop SERS substrates that are not only stable, durable and reproducible but also facilitate real-time bio-sensing. In this context diamond, β-SiC and diamond-like-carbon (DLC) and other related thin films have been promoted as excellent candidates for bio-technological applications including real time bio-sensing. In this work, SERS activities of nanodiamond, nano-β-SiC, DLC, thermally annealed diamond thin film surfaces were examined. DLC and thermally annealed diamond thin films were found to show SERS activity without any metal nanostructures on their surfaces. The observed SERS activities of the considered surfaces are explained in terms of the electromagnetic enhancement mechanism and charge transfer resonance process.

  20. STM imagery and density functional calculations of C60 fullerene adsorption on the 6H-SiC(0001)-3×3 surface

    Science.gov (United States)

    Ovramenko, T.; Spillebout, F.; Bocquet, F. C.; Mayne, A. J.; Dujardin, G.; Sonnet, Ph.; Stauffer, L.; Ksari, Y.; Themlin, J.-M.

    2013-04-01

    Scanning tunneling microscopy (STM) studies of the fullerene C60 molecule adsorbed on the silicon carbide SiC(0001)-3×3 surface, combined with density functional theory (DFT) calculations, show that chemisorption of individual C60 molecules occurs through the formation of one bond to one silicon adatom only in contrast to multiple bond formation on other semiconducting surfaces. We observe three stable adsorption sites with respect to the Si adatoms of the surface unit cell. Comprehensive DFT calculations give different adsorption energies for the three most abundant sites showing that van der Waals forces between the C60 molecule and the neighboring surface atoms need to be considered. The C60 molecules are observed to form small clusters even at low coverage indicating the presence of a mobile molecular precursor state and nonnegligible intermolecular interactions.

  1. Adsorptive kinetic mechanism of heavy metal cations on the surface of graphite oxide and its SiO2 composite

    Science.gov (United States)

    Sheet, Imtithal; Kabbani, Ahmad; Holail, Hanafy

    2017-02-01

    Nanomaterials have gained great attention because of their novel size- and shape-dependent properties, large specific surface area and high reaction activity. Moreover, nanomaterials have a wide range of applications, as in the technological and environmental challenges in the areas of solar energy conversion, catalysis, medicine, and water treatments. In the present study, nanostructured graphite oxide, silica/graphite oxide composites and silica nanoparticles were used for the removal of the heavy metal ions from aqueous solutions by a batch adsorption method and the adsorptive kinetic mechanism of heavy metal cations on the surface of graphite oxide and its SiO2 composite was evaluated. The experimental results revealed a strong adsorption of the metal cations on the surface of graphite oxide, this is reflected in the shifts in wave numbers after adsorption with nanostructured graphite oxide and the big shift in wave numbers (Δv¯) for nickel ions reflects chemosorption type of adsorption. This is confirmed by the coherence between Δv¯, removal percentage and crystal field stabilization energy (CFSE). Silica/ GO (2:3) composite showed the greatest removal percentage at different concentrations compared to pure graphite oxide and silica nanoparticles. The higher removal percentage of nickel ions by silica /GO composite (2:3) was observed at 180 min contact time and basic pH. The kinetic studies showed that silica/ GO (2:3) composite had rapid adsorption rate and efficiency and it was found to follow first order rate expression or an exponential decay of the metal cations from water study.

  2. Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation

    International Nuclear Information System (INIS)

    Liao, B; Stangl, R; Ma, F; Mueller, T; Lin, F; Aberle, A G; Bhatia, C S; Hoex, B

    2013-01-01

    We demonstrate that by using a water (H 2 O)-based thermal atomic layer deposited (ALD) aluminum oxide (Al 2 O 3 ) film, excellent surface passivation can be attained on planar low-resistivity silicon wafers. Effective carrier lifetime values of up to 12 ms and surface recombination velocities as low as 0.33 cm s −1 are achieved on float-zone wafers after a post-deposition thermal activation of the Al 2 O 3 passivation layer. This post-deposition activation is achieved using an industrial high-temperature firing process which is commonly used for contact formation of standard screen-printed silicon solar cells. Neither a low-temperature post-deposition anneal nor a silicon nitride capping layer is required in this case. Deposition temperatures in the 100–400 °C range and peak firing temperatures of about 800 °C (set temperature) are investigated. Photoluminescence imaging shows that the surface passivation is laterally uniform. Corona charging and capacitance–voltage measurements reveal that the negative fixed charge density near the AlO x /c-Si interface increases from 1.4 × 10 12 to 3.3 × 10 12 cm −2 due to firing, while the midgap interface defect density reduces from 3.3 × 10 11 to 0.8 × 10 11 cm −2 eV −1 . This work demonstrates that direct firing activation of thermal ALD Al 2 O 3 is feasible, which could be beneficial for solar cell manufacturing. (paper)

  3. Effect of Si on the oxidation reaction of α-Ti(0 0 0 1) surface: ab initio molecular dynamics study.

    Science.gov (United States)

    Bhattacharya, Somesh Kr; Sahara, Ryoji; Ueda, Kyosuke; Narushima, Takayuki

    2017-01-01

    We present our ab initio molecular dynamics (MD) study of the effect of Si on the oxidation of α-Ti(0   0   0   1) surfaces. We varied the Si concentration in the first layer of the surface from 0 to 25 at.% and the oxygen coverage ( θ ) on the surface was varied up to 1 monolayer (ML). The MD was performed at 300, 600 and 973 K. For θ  = 0.5 ML, oxygen penetration into the slab was not observed after 16 ps of MD at 973 K while for θ  > 0.5 ML, oxygen penetration into the Ti slab was observed even at 300 K. From Bader charge analysis, we confirmed the formation of the oxide layer on the surface of the Ti slab. At higher temperatures, the Si atoms diffused from the first layer to the interior of the slab, while the Ti atoms moved from second layer to the first layer. The pair correlation function shows the formation of a disordered Ti-O network during the initial stage of oxidation. Si was found to have a strong influence on the penetration of oxygen in the Ti slab at high temperatures.

  4. The Establishment, Plotting and Statistic– Mathematical Interpretation of the Liquidus Surface from the Phase Equilibrium Diagram of the Ternary System Al-Cu-Si

    Directory of Open Access Journals (Sweden)

    Florentina A. Cziple

    2006-10-01

    Full Text Available The paper forwards the conclusions of a survey performed on a mathematical model of the phase equilibrium from the ternary system Al-Cu-Si. The author presents the calculus of the statistic equation of the liquidus surface model from this diagram, the plotting and statistical-mathematical interpretation of the results obtained.

  5. Anomalous structural evolution and √ 3 x√ 3 reconstruction of a clean Si(111) surface observed after thermal desorption of thallium

    Czech Academy of Sciences Publication Activity Database

    Kocán, P.; Krejčí, Ondřej; Tochihara, H.

    2015-01-01

    Roč. 33, č. 2 (2015), "021408-1"-"021408-8" ISSN 0734-2101 Institutional support: RVO:68378271 Keywords : surface structure * Si(111) * thallium * LEED * STM Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.724, year: 2015

  6. A 0-D flame wrinkling equation to describe the turbulent flame surface evolution in SI engines

    Science.gov (United States)

    Richard, Stéphane; Veynante, Denis

    2015-03-01

    The current development of reciprocating engines relies increasingly on system simulation for both design activities and conception of algorithms for engine control. These numerical simulation tools require high computational efficiencies, as calculations have to be performed in times close to real-time. Then, they are today mainly based on simple empirical laws to describe the combustion processes in the cylinders. However, with the rapid evolution of emission regulations and fuel formulation, more and more physics is expected in combustion models. A solution consists in reducing 3-D combustion models to build 0-dimensional models that are both CPU-efficient and based on physical quantities. This approach has been used in a previous work to reduce the 3-D ECFM (Extended Coherent Flame Model), leading to the so-called CFM1D. A key feature of the latter is to be based on a 0-D equation for the flame wrinkling derived from the 3-D equation for the flame surface density. The objective of this paper is to present in details the theoretical derivation of the wrinkling equation and the underlying modeling assumptions as well. Academic validations are performed against experimental data for several turbulence intensities and fuels. Finally, the proposed model is applied to engine simulations for a wide range of operating conditions. Comparisons are successfully conducted between in-cylinder measurements and the model predictions, highlighting the interest of reducing 3-D CFD models for calculations performed in the context of system simulation.

  7. Compact Surface Plasmon Resonance System with Au/Si Schottky Barrier.

    Science.gov (United States)

    Tsukagoshi, Takuya; Kuroda, Yuta; Noda, Kentaro; Binh-Khiem, Nguyen; Kan, Tetsuo; Shimoyama, Isao

    2018-01-30

    Ethanol concentration was quantified by the use of a compact surface plasmon resonance (SPR) system, which electrically detects hot electrons via a Schottky barrier. Although it is well known that SPR can be used as bio/chemical sensors, implementation is not necessarily practical, due to the size and cost impediments associated with a system with variable wavelength or angle of incidence. However, scanning capability is not a prerequisite if the objective is to use SPR in a sensor. It is possible to build a small, inexpensive SPR sensor if the optics have no moving parts and a Schottky barrier is used for electrical current detection in place of a photodetector. This article reports on the design and performance of such a novel SPR sensor, and its application for quantifying ethanol concentration. As the concentration of ethanol is increased, the change in the angle dependence of the SPR current is observed. This change can be understood as a superposition of contributions of SPR coupled with the +3rd- and -3rd-order diffraction. Moreover, real-time monitoring of ethanol concentration was demonstrated using the proposed SPR system.

  8. Surface thermography using dual channel imaging based on the blue and red emission of Ba3MgSi2O8:Eu2+, Mn2+

    Science.gov (United States)

    Hashemi, A.; Gast, J.; Ali, A.; Osvet, A.; Vetter, A.; Stern, E.; Batentschuk, M.; Brabec, C. J.

    2017-12-01

    In this investigation, we present a surface temperature determination method based on the luminescence characteristics of Ba3MgSi2O8:Eu2+, Mn2+. Simple optics utilizing only one RGB scientific CMOS camera makes this measurement technique easily applicable. Four different imaging methods were developed and are presented together with the corresponding calibration curves. We successfully utilized the methods to take a surface temperature distribution image on glass plates with a point heat source between them.

  9. TEM investigation of the surface layer structure [111]{sub B2} of the single NiTi crystal modified by the Si-ion beam implantation

    Energy Technology Data Exchange (ETDEWEB)

    Girsova, S. L., E-mail: girs@ispms.tsc.ru; Poletika, T. M., E-mail: poletm@ispms.tsc.ru [Institute of Strength Physics and Materials Science SB RAS, Tomsk, 634055 (Russian Federation); Meisner, S. N., E-mail: msn@ispms.tsc.ru; Meisner, L. L., E-mail: llm@ispms.tsc.ru [Institute of Strength Physics and Materials Science SB RAS, Tomsk, 634055 (Russian Federation); National Research Tomsk State University, Tomsk, 634050 (Russian Federation)

    2015-10-27

    The study was carried on for the single NiTi crystals subjected to the Si-ion beam implantation. Using the transmission electron microscopy technique (TEM), the surface layer structure [111]{sub B2} was examined for the treated material. The modified near-surface sublayers were found to have different composition. Thus the uppermost sublayer contained mostly oxides; the lower-lying modified sublayer material was in an amorphous state and the thin underlying sublayer had a defect structure.

  10. Tip-force induced surface deformation in the layered commensurate tellurides NbA xTe 2 (A = Si, Ge) during atomic force microscopy measurements

    Science.gov (United States)

    Bengel, H.; Cantow, H.-J.; Magonov, S. N.; Monconduit, L.; Evain, M.; Whangbo, M.-H.

    1994-12-01

    The Te-atom surfaces of commensurate layered tellurides NbA xTe 2 ( A = Si, x = {1}/{2}; A = Ge, x = {1}/{3}, {2}/{5}, {3}/{7}) were examined by atomic force microscopy (AFM) at different applied forces. Although the bulk crystal structures show a negligible height corrugation in the surface Te-atom sheets, the AFM images exhibit dark linear patterns that become strongly pronounced at high applied forces (several hundreds nN). This feature comes about because the tip-sample force interactions induce a surface corrugation according to the local hardness variation of the surface.

  11. Adsorption mechanism of H2O molecule on the Li4SiO4 (0 1 0) surface from first principles

    Science.gov (United States)

    Kong, Xianggang; Yu, You; Ma, Shenggui; Gao, Tao; Xiao, Chengjian; Chen, Xiaojun

    2018-01-01

    The adsorption and dissociation behaviors of molecular H2O on the Li4SiO4 (0 1 0) surface have been systematically studied by first-principles calculations. It is found that the adsorbed H2O molecule mainly interacts with the O and Li atoms of the surface, that is, H atom bonds with O atoms of the surface while O atom bonds with the surface Li atoms due to the hydrogen bond effect. According to the different adsorption energies and vibrational frequencies of H2O, different adsorption types can be classified. These results may explain the origin of multiple desorption peaks in TDS experiments.

  12. Dynamic secondary ion mass spectroscopy of Au nanoparticles on Si wafer using Bi3+ as primary ion coupled with surface etching by Ar cluster ion beam: The effect of etching conditions on surface structure

    Science.gov (United States)

    Park, Eun Ji; Choi, Chang Min; Kim, Il Hee; Kim, Jung-Hwan; Lee, Gaehang; Jin, Jong Sung; Ganteför, Gerd; Kim, Young Dok; Choi, Myoung Choul

    2018-01-01

    Wet-chemically synthesized Au nanoparticles were deposited on Si wafer surfaces, and the secondary ions mass spectra (SIMS) from these samples were collected using Bi3+ with an energy of 30 keV as the primary ions. In the SIMS, Au cluster cations with a well-known, even-odd alteration pattern in the signal intensity were observed. We also performed depth profile SIMS analyses, i.e., etching the surface using an Ar gas cluster ion beam (GCIB), and a subsequent Bi3+ SIMS analysis was repetitively performed. Here, two different etching conditions (Ar1600 clusters of 10 keV energy or Ar1000 of 2.5 keV denoted as "harsh" or "soft" etching conditions, respectively) were used. Etching under harsh conditions induced emission of the Au-Si binary cluster cations in the SIMS spectra of the Bi3+ primary ions. The formation of binary cluster cations can be induced by either fragmentation of Au nanoparticles or alloying of Au and Si, increasing Au-Si coordination on the sample surface during harsh GCIB etching. Alternatively, use of the soft GCIB etching conditions resulted in exclusive emission of pure Au cluster cations with nearly no Au-Si cluster cation formation. Depth profile analyses of the Bi3+ SIMS combined with soft GCIB etching can be useful for studying the chemical environments of atoms at the surface without altering the original interface structure during etching.

  13. Searching for stable Si(n)C(n) clusters: combination of stochastic potential surface search and pseudopotential plane-wave Car-Parinello simulated annealing simulations.

    Science.gov (United States)

    Duan, Xiaofeng F; Burggraf, Larry W; Huang, Lingyu

    2013-07-22

    To find low energy Si(n)C(n) structures out of hundreds to thousands of isomers we have developed a general method to search for stable isomeric structures that combines Stochastic Potential Surface Search and Pseudopotential Plane-Wave Density Functional Theory Car-Parinello Molecular Dynamics simulated annealing (PSPW-CPMD-SA). We enhanced the Sunders stochastic search method to generate random cluster structures used as seed structures for PSPW-CPMD-SA simulations. This method ensures that each SA simulation samples a different potential surface region to find the regional minimum structure. By iterations of this automated, parallel process on a high performance computer we located hundreds to more than a thousand stable isomers for each Si(n)C(n) cluster. Among these, five to 10 of the lowest energy isomers were further optimized using B3LYP/cc-pVTZ method. We applied this method to Si(n)C(n) (n = 4-12) clusters and found the lowest energy structures, most not previously reported. By analyzing the bonding patterns of low energy structures of each Si(n)C(n) cluster, we observed that carbon segregations tend to form condensed conjugated rings while Si connects to unsaturated bonds at the periphery of the carbon segregation as single atoms or clusters when n is small and when n is large a silicon network spans over the carbon segregation region.

  14. In vitro cytotoxicity of SiO2 or ZnO nanoparticles with different sizes and surface charges on U373MG human glioblastoma cells

    Directory of Open Access Journals (Sweden)

    Kim JE

    2014-12-01

    Full Text Available Jung-Eun Kim,1,* Hyejin Kim,1,* Seong Soo A An,2 Eun Ho Maeng,3 Meyoung-Kon Kim,4 Yoon-Jae Song1 1Department of Life Science, 2Department of Bionano Technology, Gachon University, Seongnam-Si, South Korea; 3Korea Testing and Research Institute, Seoul, South Korea; 4Department of Biochemistry and Molecular Biology, Korea University Medical School and College, Seoul, South Korea *These authors contributed equally to this work Abstract: Silicon dioxide (SiO2 and zinc oxide (ZnO nanoparticles are widely used in various applications, raising issues regarding the possible adverse effects of these metal oxide nanoparticles on human cells. In this study, we determined the cytotoxic effects of differently charged SiO2 and ZnO nanoparticles, with mean sizes of either 100 or 20 nm, on the U373MG human glioblastoma cell line. The overall cytotoxicity of ZnO nanoparticles against U373MG cells was significantly higher than that of SiO2 nanoparticles. Neither the size nor the surface charge of the ZnO nanoparticles affected their cytotoxicity against U373MG cells. The 20 nm SiO2 nanoparticles were more toxic than the 100 nm nanoparticles against U373MG cells, but the surface charge had little or no effect on their cytotoxicity. Both SiO2 and ZnO nanoparticles activated caspase-3 and induced DNA fragmentation in U373MG cells, suggesting the induction of apoptosis. Thus, SiO2 and ZnO nanoparticles appear to exert cytotoxic effects against U373MG cells, possibly via apoptosis. Keyword: apoptosis

  15. SiGe nano-heteroepitaxy on Si and SiGe nano-pillars.

    Science.gov (United States)

    Mastari, Marouane; Charles, Matthew; Bogumilowicz, Yann; Thai, Quang Minh; Pimenta Barros, Patricia; Argoud, Maxime; Papon, Anne-Marie; Gergaud, Patrice; Landru, Didier; Kim, Youngpil; Hartmann, Jean Michel

    2018-04-12

    In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial Reduced Pressure-Chemical Vapour Deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometer-sized templates for the epitaxy of Si and SiGe nano-pillars. Results showed highly selective and uniform processes for the epitaxial growth of Si and SiGe nano-pillars. 200 nm thick SiGe layers were grown on Si and SiGe nano-pillars and characterized by AFM, XRD and TEM. Smooth SiGe surfaces and full strain relaxation were obtained in the 650-700°C range for 2D SiGe layers grown either on Si or SiGe nano-pillars. © 2018 IOP Publishing Ltd.

  16. Correlating the silicon surface passivation to the nanostructure of low-temperature a-Si:H after rapid thermal annealing

    Science.gov (United States)

    Macco, Bart; Melskens, Jimmy; Podraza, Nikolas J.; Arts, Karsten; Pugh, Christopher; Thomas, Owain; Kessels, Wilhelmus M. M.

    2017-07-01

    Using an inductively coupled plasma, hydrogenated amorphous silicon (a-Si:H) films have been prepared at very low temperatures (advantage of the low-temperature approach is the facile suppression of undesired epitaxial growth. The correlation between the a-Si:H nanostructure and the activation of a-Si:H/c-Si interface passivation, upon annealing, has been studied in detail. This yields a structural model that qualitatively describes the different processes that take place in the a-Si:H films during annealing. The presented experimental findings and insights can prove to be useful in the further development of very thin a-Si:H passivation layers for use in silicon heterojunction solar cells.

  17. Anodes for Lithium-Ion Batteries Based on Type I Silicon Clathrate Ba8Al16Si30- Role of Processing on Surface Properties and Electrochemical Behavior.

    Science.gov (United States)

    Zhao, Ran; Bobev, Svilen; Krishna, Lakshmi; Yang, Ting; Weller, J Mark; Jing, Hangkun; Chan, Candace K

    2017-11-29

    Type I silicon clathrates based on Ba 8 Al y Si 46-y (8 lithium-ion batteries and display electrochemical properties that are distinct from those found in conventional silicon anodes. Processing steps such as ball-milling (typically used to reduce the particle size) and acid/base treatment (used to remove nonclathrate impurities) may modify the clathrate surface structure or introduce defects, which could affect the observed electrochemical properties. In this work, we perform a systematic investigation of Ba 8 Al y Si 46-y clathrates with y ≈ 16, i.e, having a composition near Ba 8 Al 16 Si 30 , which perfectly satisfies the Zintl condition. The roles of ball-milling and acid/base treatment were investigated using electrochemical, X-ray diffraction, electron microscopy, X-ray photoelectron and Raman spectroscopy analysis. The results showed that acid/base treatment removed impurities from the synthesis, but also led to formation of a surface oxide layer that inhibited lithiation. Ball-milling could remove the surface oxide and result in the formation of an amorphous surface layer, with the observed charge storage capacity correlated with the thickness of this amorphous layer. According to the XRD and electrochemical analysis, all lithiation/delithiation processes are proposed to occur in single phase reactions at the surface with no discernible changes to the crystal structure in the bulk. Electrochemical impedance spectroscopy results suggest that the mechanism of lithiation is through surface-dominated, Faradaic processes. This suggests that for off-stoichiometric clathrates, as we studied in our previous work, Li + insertion at defects or vacancies on the framework may be the origin of reversible Li cycling. However, for clathrates Ba 8 Al y Si 46-y with y ≈ 16, Li insertion in the structure is unfavorable and low capacities are observed unless amorphous surface layers are introduced by ball-milling.

  18. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks

    OpenAIRE

    Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

    2015-01-01

    In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-S...

  19. Coverage dependent desorption dynamics of deuterium on Si(100) surfaces: interpretation with a diffusion-promoted desorption model.

    Science.gov (United States)

    Matsuno, T; Niida, T; Tsurumaki, H; Namiki, A

    2005-01-08

    We studied coverage dependence of time-of-flight (TOF) spectra of D2 molecules thermally desorbed from the D/Si(100) surface. The mean translational energies Et of desorbed D2 molecules were found to increase from 0.20+/-0.05 eV to 0.40+/-0.04 eV as the desorption coverage window was decreased from 1.0 ML> or =thetaD> or =0.9 ML to 0.2 ML> or =thetaD> or =0 ML, being consistent with the kinetics switch predicted in the interdimer mechanism. The measured TOF spectra were deconvoluted into 2H, 3H, and 4H components by a curve fitting method along the principle of detailed balance. As a result, it turned out that the desorption kinetics changes from the 4H to the 3H situation at high coverage above thetaD=0.9 ML, while the 2H desorption is dominant for a quite wide coverage region up to thetaD=0.8 ML. A dynamic desorption mechanism by which the desorption is promoted by D-atom diffusion to dangling bonds was proposed. 2005 American Institute of Physics.

  20. Structure determination of the Si(001)-(2 x 1)-H reconstruction by surface X-ray diffraction: Weakening of the dimer bond by the addition of hydrogen

    DEFF Research Database (Denmark)

    Lauridsen, E.M.; Baker, J.; Nielsen, M.

    2000-01-01

    The atomic structure of the monohydride Si(001)-(2 x 1)-H reconstruction has been investigated by surface X-ray diffraction. Atomic relaxations down to the eighth layer have been determined. The bond length of the hydrogenated silicon dimers was found to be 2.47 +/- 0.02 Angstrom. which is longer...... than the dimer bond of the clean (2 x 1)-reconstructed Si(001) surface and also 5% longer than the bulk bond length of 2.35 Angstrom. The differences to the (2 x 1) structure of the clean surface are discussed in terms of the elimination of the weak pi-bond character of the dimer bond by the addition...

  1. Initial stages of high-temperature CaF2/Si(001) epitaxial growth studied by surface X-ray diffraction.

    Science.gov (United States)

    Suturin, Sergey M; Sokolov, Nikolai S; Banshchikov, Aleksander G; Kyutt, Reginald N; Sakata, Osami; Shimura, Takayoshi; Harada, Jimpei; Tabuchi, Masao; Takeda, Yoshikazu

    2011-04-01

    Surface X-ray diffraction was applied to study structure of the fluorite-silicon interface forming upon epitaxial growth of CaF2 on Si(001) surface kept at 750 degrees C. Samples with CaF2 coverage of 1.5-4 (110)-monolayers were grown and in-situ characterized using synchrotron radiation. The 3 x 1-like surface reconstruction was observed in agreement with the previous studies by electron diffraction. Interestingly, a well pronounced splitting of the fractional x 1/3 reflections was revealed. This splitting was ascribed to the effect of antiphase domain boundaries in the row-like structure of the interface layer. The in-plane integrated intensities were used to reconstruct two-dimensional atomic structure of the high-temperature CaF2/Si(001) interface.

  2. Ultra-high adsorption capacity of MgO/SiO2composites with rough surfaces for Congo red removal from water.

    Science.gov (United States)

    Hu, Mengqing; Yan, Xinlong; Hu, Xiaoyan; Zhang, Jiajin; Feng, Rui; Zhou, Min

    2018-01-15

    Due to its high isoelectric point, relative safety and low environmental toxicity, magnesium oxide has attracted much attention for its role in the removal of toxic dyes from wastewater. Herein, MgO-SiO 2 composites with rough surfaces were synthesized by a one-step method. The as-prepared composites were characterized for the adsorption of Congo red from water using adsorption kinetics and isotherms. The adsorption capacity of the 20% MgO-SiO 2 sample could be as high as ∼4000mg/g at 25°C, which is the highest value reported to date. The adsorption process of Congo red on the as-synthesized samples obeyed the Langmuir adsorption model. The MgO-SiO 2 composite sample could be regenerated by calcination, and the regeneration efficiency remained for up to 5 cycles of the regeneration. Copyright © 2017 Elsevier Inc. All rights reserved.

  3. Constructing Fluorine-Free and Cost-Effective Superhydrophobic Surface with Normal-Alcohol-Modified Hydrophobic SiO2 Nanoparticles.

    Science.gov (United States)

    Ye, Hui; Zhu, Liqun; Li, Weiping; Liu, Huicong; Chen, Haining

    2017-01-11

    Superhydrophobic coatings have drawn much attention in recent years for their wide potential applications. However, a simple, cost-effective, and environmentally friendly approach is still lacked. Herein, a promising approach using nonhazardous chemicals was proposed, in which multiple hydrophobic functionalized silica nanoparticles (SiO 2 NPs) were first prepared as core component, through the efficient reaction between amino group containing SiO 2 NPs and the isocyanate containing hydrophobic surface modifiers synthesized by normal alcohols, followed by simply spraying onto various substrates for superhydrophobic functionalization. Furthermore, to further improve the mechanical durability, an organic-inorganic composite superhydrophobic coating was fabricated by incorporating cross-linking agent (polyisocyanate) into the mixture of hydrophobic-functionalized SiO 2 NPs and hydroxyl acrylic resin. The hybrid coating with cross-linked network structures is very stable with excellent mechanical durability, self-cleaning property and corrosion resistance.

  4. Surface structure and electronic states of epitaxial β-FeSi.sub.2./sub.(100)/Si(001) thin films: Combined quantitative LEED, ab initio DFT, and STM study

    Czech Academy of Sciences Publication Activity Database

    Romanyuk, Olexandr; Hattori, K.; Someta, M.; Daimon, H.

    2014-01-01

    Roč. 90, č. 15 (2014), "155305-1"-"155305-9" ISSN 1098-0121 Grant - others:AVČR(CZ) M100101201; Murata Science Foundation(JP) Project n. 00295 Institutional support: RVO:68378271 Keywords : iron silicide * LEED I-V * DFT * STM * surface reconstruction * surface states Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  5. RHEED studies of the nucleation, growth, and mobility of Ag atoms on the Si(111)7 x 7 surface

    Energy Technology Data Exchange (ETDEWEB)

    Roos, Kelly Ryan [Iowa State Univ., Ames, IA (United States)

    1993-07-01

    The low temperature and flux dependent growth of ultrathin Ag films on the Si(111)7x7 surface is studied with Reflection High-Energy Electron Diffraction (RHEED). The grazing incidence geometry of RHEED allows for an incident molecular beam normal to the surface, and makes it an ideal surface probe for studying ultrathin film growth in real time. Short-lived oscillations in the diffracted intensity are observed during Ag deposition at 150 K, indicating quasi-layer-by-layer growth mediated by adatom mobility. When the 150 K growth is performed over a wide range of deposition rates F, the peak intensity is observed to scale, i.e. I(Ft) depends only on the total amount deposited, which implies thermally activated diffusion is absent at 150 K. Scaling is not obeyed at higher temperatures (T≥473 K) for the growth of the √3x√3 R30° (√3) superstructure. Testing for scaling of the diffracted intensity constitutes a new experimental method which can be applied generally to determine if thermal diffusion is active at a particular temperature. Scaling is consistent with a constant diffusion length R0, independent of substrate temperature and deposition rate. The presence of a non-thermal diffusion mechanism (responsible for the constant diffusion length R0) is confirmed by monitoring the flux dependence of the √3 superstructure growth during deposition at T≥473 K. At these temperatures the total diffusion length R is given by R=R0+(4Dt)1/2, where (4Dt)1/2 is the thermal component. A non-zero intercept R0 is found by plotting the peak intensity Ip1/2 (a measure of the average domain size) vs. deposition rate F-1/2 (F-1 is proportional to the available diffusion time.) From the FWHM of a low coverage (0.2 ML) √3 spot, an estimation of 50 Å is made for a lower bound of the magnitude of R0.

  6. RHEED studies of the nucleation, growth, and mobility of Ag atoms on the Si(111)7 x 7 surface

    International Nuclear Information System (INIS)

    Roos, K.R.

    1993-07-01

    The low temperature and flux dependent growth of ultrathin Ag films on the Si(111)7x7 surface is studied with Reflection High-Energy Electron Diffraction (RHEED). The grazing incidence geometry of RHEED allows for an incident molecular beam normal to the surface, and makes it an ideal surface probe for studying ultrathin film growth in real time. Short-lived oscillations in the diffracted intensity are observed during Ag deposition at 150 K, indicating quasi-layer-by-layer growth mediated by adatom mobility. When the 150 K growth is performed over a wide range of deposition rates F, the peak intensity is observed to scale, i.e. I(Ft) depends only on the total amount deposited, which implies thermally activated diffusion is absent at 150 K. Scaling is not obeyed at higher temperatures (T≥473 K) for the growth of the √3x√3 R30 degrees (√3) superstructure. Testing for scaling of the diffracted intensity constitutes a new experimental method which can be applied generally to determine if thermal diffusion is active at a particular temperature. Scaling is consistent with a constant diffusion length R 0 , independent of substrate temperature and deposition rate. The presence of a non-thermal diffusion mechanism (responsible for the constant diffusion length R 0 ) is confirmed by monitoring the flux dependence of the √3 superstructure growth during deposition at T≥473 K. At these temperatures the total diffusion length R is given by R=R 0 +(4Dt) 1/2 , where (4Dt) 1/2 is the thermal component. A non-zero intercept R 0 is found by plotting the peak intensity I p 1/2 (a measure of the average domain size) vs. deposition rate F -1/2 (F -1 is proportional to the available diffusion time.) From the FWHM of a low coverage (0.2 ML) √3 spot, an estimation of 50 angstrom is made for a lower bound of the magnitude of R 0

  7. Fabrication and enhanced photocatalytic properties of Pt@SiO2@TiO2 composites by surface plasma resonance from Pt nanoparticles

    Science.gov (United States)

    Zhang, Fangfang; Liu, Wei; Liu, Yousong; Wang, Junyi; Ji, Guangbin

    2015-02-01

    Pt@SiO2@TiO2 composites with an average diameter of about 120 nm were synthesized by an aqueous method. Morphology, microstructure, and light absorption performance of as-prepared samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and UV-Vis diffuse reflectance spectroscopy. The results indicate that 5-nm-thick SiO2 interlayer coated on the Pt nanoparticles were used to separate the Pt from the TiO2. The covering SiO2 layer between Pt nanoparticles and TiO2 layer present a wide spectral response. The enhanced photocatalytic efficiency under both the full spectrum and visible light can be attributed to the existence of Pt nanoparticles and interlayer SiO2. The coupling processes between TiO2 and plasmon were presented and the mechanism was discussed. The localized surface plasmon resonance effect of Pt nanoparticles is the main reason for the enhanced photocatalytic activity of the composite Pt@SiO2@TiO2.

  8. Atomic force microscopy investigation of surface roughness generated between SiO2 micro-pits in CHF3/Ar plasma

    Science.gov (United States)

    Rad, Maryam Alsadat; Ibrahim, Kamarulazizi; Mohamed, Khairudin

    2012-05-01

    The present paper investigates the surface roughness generated by reactive ion etching (RIE) on the location between silicon dioxide (SiO2) micro-pits structures. The micro-pit pattern on polymethyl methacrylate (PMMA) mask was created by an electron beam lithography tool. By using PMMA as a polymer resist mask layer for pattern transfer in RIE process, the carbon (C) content in etching process is increased, which leads to decrease of F/C ratio and causes domination of polymerization reactions. This leads to high surface roughness via self-organized nanostructure features generated on SiO2 surface which was analyzed using atomic force microscopy (AFM) technique. The etching chemistry of CHF3 plasma on PMMA masking layer and SiO2 is analyzed to explain the polymerization. The surface root-mean-square (RMS) roughness below 1 nm was achieved by decreasing the RF power to 150 W and process pressure lower than 10 mTorr.

  9. Collective evolution of submicron hillocks during the early stages of anisotropic alkaline wet chemical etching of Si(1 0 0) surfaces

    Science.gov (United States)

    Sana, P.; Vázquez, Luis; Cuerno, Rodolfo; Sarkar, Subhendu

    2017-11-01

    We address experimentally the large-scale dynamics of Si(1 0 0) surfaces during the initial stages of anisotropic wet (KOH) chemical etching, which are characterized through atomic force microscopy. These systems are known to lead to the formation of characteristic pyramids, or hillocks, of typical sizes in the nanometric/micrometer scales, thus with the potential for a large number of applications that can benefit from the nanotexturing of Si surfaces. The present pattern formation process is very strongly disordered in space. We assess the space correlations in such a type of rough surface and elucidate the existence of a complex and rich morphological evolution, featuring at least three different regimes in just 10 min of etching. Such a complex time behavior cannot be consistently explained within a single formalism for dynamic scaling. The pyramidal structure reveals itself as the basic morphological motif of the surface throughout the dynamics. A detailed analysis of the surface slope distribution with etching time reveals that the texturing process induced by the KOH etching is rather gradual and progressive, which accounts for the dynamic complexity. The various stages of the morphological evolution can be accurately reproduced by computer-generated surfaces composed by uncorrelated pyramidal structures. To reach such an agreement, the key parameters are the average pyramid size, which increases with etching time, its distribution and the surface coverage by the pyramidal structures.

  10. Closing the scale gap between land surface parameterizations and GCMs with a new scheme, SiB3-Bins

    Science.gov (United States)

    Baker, I. T.; Sellers, P. J.; Denning, A. S.; Medina, I.; Kraus, P.; Haynes, K. D.; Biraud, S. C.

    2017-03-01

    The interaction of land with the atmosphere is sensitive to soil moisture (W). Evapotranspiration (ET) reacts to soil moisture in a nonlinear way, f(W), as soils dry from saturation to wilt point. This nonlinear behavior and the fact that soil moisture varies on scales as small as 1-10 m in nature, while numerical general circulation models (GCMs) have grid cell sizes on the order of 1 to 100s of kilometers, makes the calculation of grid cell-average ET problematic. It is impractical to simulate the land in GCMs on the small scales seen in nature, so techniques have been developed to represent subgrid scale heterogeneity, including: (1) statistical-dynamical representations of grid subelements of varying wetness, (2) relaxation of f(W), (3) moderating f(W) with approximations of catchment hydrology, (4) "tiling" the landscape into vegetation types, and (5) hyperresolution. Here we present an alternative method for representing subgrid variability in W, one proven in a conceptual framework where landscape-scale W is represented as a series of "Bins" of increasing wetness from dry to saturated. The grid cell-level f(W) is defined by the integral of the fractional area of the wetness bins and the value of f(W) associated with each. This approach accounts for the spatiotemporal dynamics of W. We implemented this approach in the SiB3 land surface parameterization and then evaluated its performance against a control, which assumes a horizontally uniform field of W. We demonstrate that the Bins method, with a physical basis, attenuates unrealistic jumps in model state and ET seen in the control runs.

  11. Self-formation of a nanonet of fluorinated carbon nanowires on the Si surface by combined etching in fluorine-containing plasma

    Science.gov (United States)

    Amirov, I. I.; Gorlachev, E. S.; Mazaletskiy, L. A.; Izyumov, M. O.; Alov, N. V.

    2018-03-01

    In this work, we report a technique of the self-formation of a nanonet of fluorinated carbon nanowires on the Si surface using a combined etching in fluorine-containing C4F8/Ar and SF6 plasmas. Using scanning electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy, we show that after the etching of Si in the C4F8/Ar plasma, a fluorinated carbon film of nanometer-scale thickness is formed on its surface and its formation accelerates at elevated temperatures. After a subsequent short-term etching in the SF6 plasma, the film is modified into a nanonet of self-formed fluorinated carbon nanowires.

  12. Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth

    Directory of Open Access Journals (Sweden)

    Xingfang Liu

    2015-09-01

    Full Text Available Nano-textured 4H–SiC homoepitaxial layers (NSiCLs were grown on 4H–SiC(0001 substrates using a low pressure chemical vapor deposition technique (LPCVD, and subsequently were subjected to high temperature treatments (HTTs for investigation of their surface morphology evolution and graphene growth. It was found that continuously distributed nano-scale patterns formed on NSiCLs which were about submicrons in-plane and about 100 nanometers out-of-plane in size. After HTTs under vacuum, pattern sizes reduced, and the sizes of the remains were inversely proportional to the treatment time. Referring to Raman spectra, the establishment of multi-layer graphene (MLG on NSiCL surfaces was observed. MLG with sp2 disorders was obtained from NSiCLs after a high temperature treatment under vacuum at 1700 K for two hours, while MLG without sp2 disorders was obtained under Ar atmosphere at 1900 K.

  13. Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth

    Science.gov (United States)

    Liu, Xingfang; Chen, Yu; Sun, Changzheng; Guan, Min; Zhang, Yang; Zhang, Feng; Sun, Guosheng; Zeng, Yiping

    2015-01-01

    Nano-textured 4H–SiC homoepitaxial layers (NSiCLs) were grown on 4H–SiC(0001) substrates using a low pressure chemical vapor deposition technique (LPCVD), and subsequently were subjected to high temperature treatments (HTTs) for investigation of their surface morphology evolution and graphene growth. It was found that continuously distributed nano-scale patterns formed on NSiCLs which were about submicrons in-plane and about 100 nanometers out-of-plane in size. After HTTs under vacuum, pattern sizes reduced, and the sizes of the remains were inversely proportional to the treatment time. Referring to Raman spectra, the establishment of multi-layer graphene (MLG) on NSiCL surfaces was observed. MLG with sp2 disorders was obtained from NSiCLs after a high temperature treatment under vacuum at 1700 K for two hours, while MLG without sp2 disorders was obtained under Ar atmosphere at 1900 K. PMID:28347079

  14. Fabrication of ZIF-8@SiO2 Micro/Nano Hierarchical Superhydrophobic Surface on AZ31 Magnesium Alloy with Impressive Corrosion Resistance and Abrasion Resistance.

    Science.gov (United States)

    Wu, Cuiqing; Liu, Qi; Chen, Rongrong; Liu, Jingyuan; Zhang, Hongsen; Li, Rumin; Takahashi, Kazunobu; Liu, Peili; Wang, Jun

    2017-03-29

    Superhydrophobic coatings are highly promising for protecting material surfaces and for wide applications. In this study, superhydrophobic composites, comprising a rhombic-dodecahedral zeolitic imidazolate framework (ZIF-8@SiO 2 ), have been manufactured onto AZ31 magnesium alloy via chemical etching and dip-coating methods to enhance stability and corrosion resistance. Herein, we report on a simple strategy to modify hydrophobic hexadecyltrimethoxysilan (HDTMS) on ZIF-8@SiO 2 to significantly improve the property of repelling water. We show that various liquids can be stable on its surface and maintain a contact angle higher than 150°. The morphologies and chemical composition were characterized by means of scanning electron microscopy (SEM) and Fourier transform infrared spectroscopy (FI-IR). In addition, the anticorrosion and antiattrition properties of the film were assessed by electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization and HT, respectively. Such a coating shows promising potential as a material for large-scale fabrication.

  15. Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

    International Nuclear Information System (INIS)

    Ghandi, R.; Kolahdouz, M.; Hallstedt, J.; Wise, R.; Wejtmans, Hans; Radamson, H.H.

    2008-01-01

    In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si 1-x Ge x (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers

  16. Structural, surface potential and optical studies of AlGaN based double heterostructures irradiated by 120 MeV Si{sup 9+} swift heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Arivazhagan, P., E-mail: arivazhaganau2008@gmail.com [Crystal Growth Centre, Anna University, Chennai, 600 025 (India); Ramesh, R.; Balaji, M. [Crystal Growth Centre, Anna University, Chennai, 600 025 (India); Asokan, K. [Inter-University Accelerator Centre (IUAC), New Delhi (India); Baskar, K. [Crystal Growth Centre, Anna University, Chennai, 600 025 (India)

    2016-09-15

    The Al{sub 0.33}Ga{sub 0.77}N/Al{sub 0.14}Ga{sub 0.86}N based double heterostructure was irradiated using Si{sup 9+} ion at room temperature (RT) and liquid nitrogen temperature (LNT) with four dissimilar ion fluence. The effect of Si{sup 9+} ion irradiation in dislocation densities and in-plane strain of GaN layer were discussed. The in-plane strain values of Al{sub x}Ga{sub 1-x}N layers were calculated from asymmetric reciprocal space mapping (RSM). The surface modification and the variation in phase shift on Al{sub 0.33}Ga{sub 0.77}N surfaces due to the irradiation were measured by Electrostatic Force Microscopy (EFM). The capacitance of the tip-sample system was determined from EFM. The band edge emissions of heterostructures were measured by the room temperature phototluminescence (PL) and the shift in the Al{sub 0.14}Ga{sub 0.86}N active layer emission peaks towards the low energy side at low fluence ion irradiation has been noted. - Highlights: • Effects of Si{sup 9+} ion irradiation on AlGaN double heterostructures were investigated. • Dislocation densities of GaN reduced at liquid nitrogen temperature irradiation. • Variation in phase shift on Al{sub 0.33}Ga{sub 0.77}N surfaces was measured by EFM. • Capacitance per unit area values of AFM tip-sample surface system were calculated. • Si{sup 9+} irradiations play an important role to tune the energy gap in Al{sub 0.14}Ga{sub 0.86}N.

  17. Positron annihilation study of the electronic structure of URu.sub.2./sub.Si.sub.2./sub.: Fermi surface and hidden order parameter

    Czech Academy of Sciences Publication Activity Database

    Biasini, M.; Rusz, Ján; Mills, A.

    2009-01-01

    Roč. 79, č. 8 (2009), 085115/1-085115/10 ISSN 1098-0121 Institutional research plan: CEZ:AV0Z10100520 Keywords : positron annihilation * 2D-ACAR * URu 2 Si 2 * density functional theory * hidden order * Fermi surface Subject RIV: BE - Theoretical Physics Impact factor: 3.475, year: 2009 http://prb.aps.org/abstract/PRB/v79/i8/e085115

  18. Photoelectron diffraction of C6H8/Si(001) : A model case for photoemission study of organic molecules adsorbed on silicon surfaces

    Science.gov (United States)

    Gunnella, R.; Shimomura, M.; D'Amico, F.; Abukawa, T.; Kono, S.

    2006-06-01

    The core-level photoemission of 1,4-cyclohexadiene molecules on the quasi-single-domain 2×1-Si(001) surface below the saturation condition was studied. Taking advantage of core-level-shift photoelectron diffraction of the C 1s core level, the details of the surface structure were found. The model was essentially constituted by an unbuckled (planar) molecule chemisorbed on the surface, inclined at an angle of about 18° with respect to the surface normal, keeping one double bond unsaturated. An accurate analysis of the line shape parameters of the strongly asymmetric C 1s core level was mandatory for the structural study. Conversely, the success of the structural determination represented a confirmation of the correct deconvolution procedure. Such a feedback loop was decisive in reducing the indeterminacy affecting the analysis of core-level photoemission in the case of complex molecules adsorbed on surfaces.

  19. Spectroscopic characterization of a single dangling bond on a bare Si(100)- c ( 4 × 2 ) surface for n - and p -type doping

    KAUST Repository

    Mantega, M.

    2012-07-19

    We investigate the charging state of an isolated single dangling bond formed on an unpassivated Si(100) surface with c(4×2) reconstruction, by comparing scanning tunneling microscopy and spectroscopy analysis with density functional theory calculations. The dangling bond is created by placing a single hydrogen atom on the bare surface with the tip of a scanning tunneling microscope. The H atom passivates one of the dimer dangling bonds responsible for the surface one-dimensional electronic structure. This leaves a second dangling at the reacted surface dimer which breaks the surface periodicity. We consider two possible H adsorption configurations for both the neutral and the doped situation (n- and p-type). In the case of n-doping we find that the single dangling bond state is doubly occupied and the most stable configuration is that with H bonded to the bottom Si atom of the surface dimer. In the case of p-doping the dangling bond is instead empty and the configuration with the H attached to the top atom of the dimer is the most stable. Importantly the two configurations have different scattering properties and phase shift fingerprints. This might open up interesting perspectives for fabricating a switching device by tuning the doping level or by locally charging the single dangling bond state. © 2012 American Physical Society.

  20. Ultra-high sensitive substrates for surface enhanced Raman scattering, made of 3 nm gold nanoparticles embedded on SiO2 nanospheres

    Science.gov (United States)

    Phatangare, A. B.; Dhole, S. D.; Dahiwale, S. S.; Bhoraskar, V. N.

    2018-05-01

    The surface properties of substrates made of 3 nm gold nanoparticles embedded on SiO2 nanospheres enabled fingerprint detection of thiabendazole (TBZ), crystal violet (CV) and 4-Aminothiophenol (4-ATP) at an ultralow concentration of ∼10-18 M by surface enhanced Raman spectroscopy (SERS). Gold nanoparticles of an average size of ∼3 nm were synthesized and simultaneously embedded on SiO2 nanospheres by the electron irradiation method. The substrates made from the 3 nm gold nanoparticles embedded on SiO2 nanospheres were successfully used for recording fingerprint SERS spectra of TBZ, CV and 4-ATP over a wide range of concentrations from 10-6 M to 10-18 M using 785 nm laser. The unique features of these substrates are roughness near the surface due to the inherent structural defects of 3 nm gold nanoparticles, nanogaps of ≤ 1 nm between the embedded nanoparticles and their high number. These produced an abundance of nanocavities which act as active centers of hot-spots and provided a high electric field at the reporter molecules and thus an enhancement factor required to record the SERS spectra at ultra low concentration of 10-18 M. The SERS spectra recorded by the substrates of 4 nm and 6 nm gold nanoparticles are discussed.

  1. Studies on the polycrystalline silicon/SiO2 stack as front surface field for IBC solar cells by two-dimensional simulations

    International Nuclear Information System (INIS)

    Jiang Shuai; Jia Rui; Tao Ke; Hou Caixia; Sun Hengchao; Li Yongtao; Yu Zhiyong

    2017-01-01

    Interdigitated back contact (IBC) solar cells can achieve a very high efficiency due to its less optical losses. But IBC solar cells demand for high quality passivation of the front surface. In this paper, a polycrystalline silicon/SiO 2 stack structure as front surface field to passivate the front surface of IBC solar cells is proposed. The passivation quality of this structure is investigated by two dimensional simulations. Polycrystalline silicon layer and SiO 2 layer are optimized to get the best passivation quality of the IBC solar cell. Simulation results indicate that the doping level of polycrystalline silicon should be high enough to allow a very thin polycrystalline silicon layer to ensure an effective passivation and small optical losses at the same time. The thickness of SiO 2 should be neither too thin nor too thick, and the optimal thickness is 1.2 nm. Furthermore, the lateral transport properties of electrons are investigated, and the simulation results indicate that a high doping level and conductivity of polycrystalline silicon can improve the lateral transportation of electrons and then the cell performance. (paper)

  2. Surface characterization of U(AlxSi1-x)3 alloy and its interaction with O2 and H2O, at room temperature

    Science.gov (United States)

    Matmor, M.; Cohen, S.; Rafailov, G.; Vaknin, M.; Shamir, N.; Gouder, T.; Zalkind, S.

    2018-02-01

    Surface characterization and the interactions of U(AlxSi1-x)3 alloy (x = 0.57) with oxygen and water vapor were studied, utilizing X-Ray Photoelectron Spectroscopy and Direct Recoil Spectrometry, at room temperature. The U 4f spectrum of U(AlxSi1-x)3 alloy exhibits weak correlation satellites, suggesting an itinerant description of the U 5f states for this compound. The Al and Si 2p lines are chemically shifted to lower binding energies. Exposing the alloy to oxygen and water vapor results in oxidation of mainly the uranium and aluminum components, while silicon is only slightly oxidized. Oxygen was found to be a stronger oxidizer than water vapor and the trend is consistent with the more negative enthalpies of formation of metal oxides produced by the O2 reaction, as compared to H2O. During oxygen exposure, fast oxidation occurs by oxide islands nucleation and lateral growth, followed by oxidation of the sub-surface, up to ∼4 nm, at 1000 L exposure. Water initially reacts with the surface by full dissociation and oxide islands formation, which is then covered by hydroxides. Only a minor increase in the oxide thickness of up to ∼2.5 nm, was observed after coalescence.

  3. Photoemission and low energy electron microscopy study on the formation and nitridation of indium droplets on Si (111)7 × 7 surfaces

    International Nuclear Information System (INIS)

    Qi, B.; Ólafsson, S.; Göthelid, M.; Gislason, H.P.; Agnarsson, B.

    2013-01-01

    The formation and nitridation of indium (In) droplets on Si (111)7 × 7, with regard to In droplet epitaxy growth of InN nanostructures, were studied using a spectroscopic photoemission and low energy electron microscopy, for the In coverages from 0.07 to 2.3 monolayer (ML). The results reveal that the In adatoms formed well-ordered clusters while keeping the Si (111)7 × 7 surface periodicity at 0.07 ML and a single √(3)×√(3) phase at 0.3 ML around 440–470 °C. At 0.82 ML, owing to the presence of structurally defect areas beside the 7 × 7 domains, 3-D In droplets evolved concomitantly with the formation of 4 × 1-In cluster chains, accompanied by a transition in surface electric property from semiconducting to metallic. Further increasing the In to 2.3 ML led to a moderate increase in number density and an appreciable lateral growth of the droplets, as well as the multi-domain In phases. Upon nitridation with NH 3 at ∼ 480 °C, besides the nitridation of the In droplets, the N radicals also dissociated the In-Si bonds to form Si-N. This caused a partial disintegration of the ordered In phase and removal of the In adatoms between the In droplets. - Highlights: ► Formation and nitridation of indium (In) droplets on Si (111) were studied. ► In droplets evolved with the 4 × 1-In cluster chains at 0.82 monolayer (ML). ► In droplets grow in density and lateral size with In coverage increased to 2.3 ML. ► The multi-domain In phases were formed at 2.3 ML. ► Nitridation of In droplets is accompanied by a disintegration of layering In phase

  4. Applicability of magic angle for angle-resolved X-ray photoelectron spectroscopy of corrugated SiO.sub.2./sub./Si surfaces: Monte Carlo calculations

    Czech Academy of Sciences Publication Activity Database

    Olejník, Kamil; Zemek, Josef

    2008-01-01

    Roč. 602, - (2008), s. 2581-2586 ISSN 0039-6028 R&D Projects: GA ČR GA202/06/0459 Institutional research plan: CEZ:AV0Z10100521 Keywords : photoelectron spectroscopy * surface roughness * Monte Carlo calculations * magic angle * overlayer thickness Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.731, year: 2008

  5. Selective Dispersive Solid Phase Extraction of Ser-traline Using Surface Molecularly Imprinted Polymer Grafted on SiO2/Graphene Oxide

    Directory of Open Access Journals (Sweden)

    Faezeh Khalilian

    2017-01-01

    Full Text Available A surface molecularly imprinted dispersive solid phase extraction coupled with liquid chromatography–ultraviolet detection is proposed as a selective and fast clean-up technique for the determination of sertraline in biological sample. Surface sertraline-molecular imprinted polymer was grafted and synthesized on the SiO2/graphene oxide surface. Firstly SiO2 was coated on synthesized graphene oxide sheet using sol-gel technique. Prior to polymerization, the vinyl group was incorporated on to the surface of SiO2/graphene oxide to direct selective polymerization on the surface. Methacrylic acid, ethylene glycol dimethacrylate and ethanol were used as monomer, cross-linker and progen, respectively. Non-imprinted polymer was also prepared for comparing purposes. The properties of the molecular imprinted polymer were characterized using field emission-scanning electron microscopy and Fourier transform infrared spectroscopy methods. The surface molecular imprinted polymer was utilized as an adsorbent of dispersive solid phase extraction for separation and preconcentration of sertraline. The effects of the different parameters influencing the extraction efficiency, such as sample pH were investigated and optimized. The specificity of the molecular imprinted polymer over the non-imprinted polymer was examined in absence and presence of competitive drugs. Sertraline calibration curve showed linearity in the ranges 1–500 µg L-1. The limits of detection and quantification under optimized conditions were obtained 0.2 and 0.5 µg L-1. The within-day and between-day relative standard deviations (n=3 were 4.3 and 7.1%, respectively. Furthermore, the relative recoveries for spiked biological samples were above 92%.

  6. Formation of InN atomic-size wires by simple N adsorption on the In/Si(111)–(4 × 1) surface

    International Nuclear Information System (INIS)

    Guerrero-Sánchez, J.; Takeuchi, Noboru

    2016-01-01

    Highlights: • N atoms on the surface form bonds with two In atoms and one Si atom. • Surface formation energy calculations show two stable structures with formation of InN atomic-size wires. • Projected density of states shows a tendency to form In−N and Si−N bonds on the surface. • Charge density corroborates the covalent character of the In−N bonds. - Abstract: We have carried out first principles total energy calculations to study the formation of InN atomic-size wires on the In/Si(111)–(4 × 1) surface. In its most favorable adsorption site, a single N atom forms InN arrangements. The deposit of 0.25 monolayers (MLs) of N atoms, result in the breaking of one of the original In chains and the formation of an InN atomic size wire. Increasing the coverage up to 0.5 ML of N atoms results in the formation of two of those wires. Calculated surface formation energies show that for N-poor conditions the most stable configuration is the original In/Si(111)–(4 × 1) surface with no N atoms. Increasing the N content, and in a reduced range of chemical potential, the formation of an InN wire is energetically favorable. Instead, from intermediate to N-rich conditions, two InN atomic wires are more stable. Projected density of states calculations have shown a trend to form covalent bonds between the In−p and N−p orbitals in these stable models.

  7. The first-principle study of N2O gas interaction on the surface of pristine and Si-, Ga-, SiGa-doped of armchair boron phosphide nanotube using DFT method

    Directory of Open Access Journals (Sweden)

    M Rezaei-Sameti

    2016-12-01

    Full Text Available In present research,  the electrical, structural, quantum and Nuclear Magnetic Resonance (NMR parameters of interaction of N2O gas on the B and P sites of pristine, Ga-, Si- and SiGa-doped (4,4 armchair models of boron phosphide nanotubes (BPNTs are investigated by using density functional theory (DFT.  For this purpose, seven models for adsorption of N2O gas on the exterior surfaces of BPNTs have been considered and then all structures are optimized by B3LYP level of theory and 6–31G (d base set. The optimized structures are used to calculate the electrical, structural, quantum and NMR parameters. The computational results revealed that the adsorption energy of all studied models of BPNTs is negative; all processes are exothermic and favorable in thermodynamic approach. When N2O gas is adsorbed from its O atom head on the B site of nanotube, N2O gas is dissociated to O atom and N2 molecule. The adsorption energy of this process is more than those of other models and more stable than other models. In A, B and C models, the global hardness decreases significantly from original values and so the activity of nanotube increases from original state. On the other hand, the electrophilicity index (ω, electronic chemical potential (μ, electronegativity (χ and global softness (S of the A, B and C models increase significantly from original value and CSI values of the C model are larger than those of other models. The results demonstrate that the Ga-, Si- and SiGa- doped BPNTs are good candidates to adsorb N2O and make N2O gas sensor

  8. vapor phase lubrication of SiO2 surfaces via adsorption of short chain linear alcohols & a sum frequency generation vibration spectroscopy study of crystalline cellulose in biomass

    Science.gov (United States)

    Barnette, Anna Lorraine

    The use of silicon oxide with its native oxide layer for the fabrication of microelectromechanical systems (MEMS) with contacting sliding parts requires the need for innovative lubrication methods to extend device lifetimes. The most promising method to date involves the equilibrium vapor phase lubrication (VPL) of MEMS using short chain linear alcohols in ambient conditions. Still, some questions remain regarding the effectiveness of this lubrication method, these include (1) whether or not the adsorbed n-alcohol molecules are the primary lubricant and (2) is this lubrication method effective in humid environments. This study investigates the vapor phase lubrication of SiO2 surfaces using short chain linear alcohols, more specifically n-propanol and n-pentanol. Macro-scale ball-on-flat tribometer tests are used to evaluate the lubriciousness of n-pentanol vapor under a series of contact loads/ pressures. Wear reduction of the SiO2 surfaces is achieved when there is complete coverage of the SiO2 surfaces with the adsorbed n-pentanol molecules. This occurs when the partial pressure relative to the saturation pressure (P/Psat) of n-pentanol was kept above 20% P/Psat which corresponds to approximately monolayer coverage of the SiO2 surface. In contrast to the lubricious effect of n-pentanol vapor, water vapor proves to enhance wear of the SiO2 surfaces when compared to dry (low moisture) conditions. This study also demonstrates that the primary lubrication method of the SiO 2 surfaces is most likely the adsorbed n-pentanol molecules and not the tribochemical reaction species produced during the sliding contact. Although this reaction species is always present within the wear tested regions, the production of the tribochemical reaction species is enhanced when more severe wear is observed. So, the adsorbed n-pentanol molecules are the primary method of lubrication. The effectiveness of the lubrication method in environments containing water vapor is also investigated

  9. Sol-Gel SiO2-CaO-P2O5 biofilm with surface engineered for medical application

    Directory of Open Access Journals (Sweden)

    Sonia Regina Federman

    2007-06-01

    Full Text Available Sol-gel film in the SiO2-CaO-P2O5 system was prepared from TEOS, TEP, alcohol and hydrated calcium nitrate in an acidic medium. The coatings were deposited on stainless steel using the dip-coating technique. After deposition, the composite was submitted to heat treatment, at different temperatures and exposure times to investigate the influence of such parameters on the surface morphology of the composite. The coated surfaces were characterized by AFM, SEM and FTIR. The present study showed that the formation of different textures (an important parameter in implant fixation could be controlled by temperature and time of heat treatment.

  10. Electric field dependent structural and vibrational properties of the Si(100)-H(2 x 1) surface and its implications for STM induced hydrogen desorption

    DEFF Research Database (Denmark)

    Stokbro, Kurt

    1999-01-01

    We report a first principles study of the structure and the vibrational properties of the Si(100)-H(2 x 1) surface in an electric field. The calculated vibrational parameters are used to model the vibrational modes in the presence of the electric field corresponding to a realistic scanning...... tunneling microscopy tip-surface geometry. We find that local one-phonon excitations have short lifetimes (10 ps at room temperature) due to incoherent lateral diffusion, while diffusion of local multi-phonon excitations are suppressed due to anharmonic frequency shifts and have much longer lifetimes (10 ns...... in the desorption process. (C) 1999 Elsevier Science B.V. All rights reserved....

  11. Gate-controlled diodes for characterization of the Si-SiO sub 2 interface with respect to surface effects of silicon detectors

    CERN Document Server

    Becker, C; Lichau, C; Wuebben, T; Wüstenfeld, J; Wunstorf, R

    2000-01-01

    In future high-energy physics experiments silicon detectors with a high spatial resolution will be used for tracking close to the interaction point. Besides crystal damage, the surface damage caused by ionizing irradiation is very important for the long-term performance of these devices. Therefore, systematic characterization of surface effects is necessary. For these investigations we designed a test field consistent of MOS structures and gate-controlled diodes to be produced with different vendors. A new gate-controlled diode with different current and capacitance measurement options will be introduced and first results of parameters evaluated on the unirradiated device as well as after irradiation with low energetic electrons, neutrons and charged hadrons will be presented. The gate-controlled diode with new features has been shown to be a powerful tool to investigate the oxide and interface quality before and after irradiation.

  12. The structure and mechanical properties of AlMg5Si2Mn alloy after surface alloying by the use of fiber laser

    Science.gov (United States)

    Pakieła, Wojciech; Tanski, Tomasz; Pawlyta, Mirosława; Pakieła, Katarzyna; Brytan, Zbigniew; Sroka, Marek

    2018-03-01

    Laser surface treatment is successfully applied to increase hardness as well as corrosion and wear resistance in light alloys such as aluminum or magnesium. The laser surface remelting also can be used to repair superficial cracks, voids or porosity caused by the mechanical impact, metallurgical process as well as the corrosive environment on the surface of the aluminum alloy. The purpose of this paper was to investigate the influence of a fiber laser surface treatment on the structure and properties of the EN AC AlMg5Si2Mn alloy. The goal of this investigation was to increase the hardness and improve tribological properties of the aluminum alloy surface as a result of the conducted laser surface treatment. During laser processing, the top surface of the aluminum alloy was enriched with Cr and Ni particles. The grain size of the applied particles was approximately about 60-130 m. The Cr-Ni powder has been introduced in the molten pool using vacuum feeder at a constant rate of 4.5 g/min. For surface remelting we used square laser beam at a size 3 × 3 mm and with the power of 3.0 kW. The linear laser scan rate of the beam was set at 0.5 m/min. Argon was used to protect the liquid metal alloy during surface treatment. Application of the laser treatment on aluminum alloy has enabled to obtain much harder as well as better wear resistant material compared to the untreated EN AC AlMg5Si2Mn.

  13. The interaction of C60 on Si(111 7x7 studied by Supersonic Molecular Beams: interplay between precursor kinetic energy and substrate temperature in surface activated processes.

    Directory of Open Access Journals (Sweden)

    Lucrezia eAversa

    2015-06-01

    Full Text Available Buckminsterfullerene (C60 is a molecule fully formed of carbon that can be used, owing to its electronic and mechanical properties, as clean precursor for the growth of carbon-based materials, ranging from -conjugated systems (graphenes to synthesized species, e.g. carbides such as silicon carbide (SiC. To this goal, C60 cage rupture is the main physical process that triggers material growth. Cage breaking can be obtained either thermally by heating up the substrate to high temperatures (630°C, after C60 physisorption, or kinetically by using Supersonic Molecular Beam Epitaxy (SuMBE techniques. In this work, aiming at demonstrating the growth of SiC thin films by C60 supersonic beams, we present the experimental investigation of C60 impacts on Si(111 7x7 kept at 500°C for translational kinetic energies ranging from 18 to 30 eV. The attained kinetically activated synthesis of SiC submonolayer films is probed by in-situ surface electron spectroscopies (XPS and UPS. Furthermore, in these experimental conditions the C60-Si(111 7×7 collision has been studied by computer simulations based on a tight-binding approximation to Density Functional Theory, DFT. Our theoretical and experimental findings point towards a kinetically driven growth of SiC on Si, where C60 precursor kinetic energy plays a crucial role, while temperature is relevant only after cage rupture to enhance Si and carbon reactivity. In particular, we observe a counterintuitive effect in which for low kinetic energy (below 22 eV, C60 bounces back without breaking more effectively at high temperature due to energy transfer from excited phonons. At higher kinetic energy (22 < K < 30 eV, for which cage rupture occurs, temperature enhances reactivity without playing a major role in the cage break. These results are in good agreement with ab-initio molecular dynamics simulations. SuMBE is thus a technique able to drive materials growth at low temperature regime.

  14. Surface anisotropy change of CoFe{sub 2}O{sub 4} nanoparticles depending on thickness of coated SiO{sub 2} shell

    Energy Technology Data Exchange (ETDEWEB)

    Coskun, Mustafa [Hacettepe University, Department of Physics Engineering (Turkey); Can, Musa Mutlu, E-mail: musamutlucan@gmail.com [Nanotechnology Research and Application Center, Sabanc Latin-Small-Letter-Dotless-I University, Faculty of Engineering and Natural Sciences (Turkey); Coskun, Oezlem Duyar; Korkmaz, Mustafa; F Latin-Small-Letter-Dotless-I rat, Tezer [Hacettepe University, Department of Physics Engineering (Turkey)

    2012-10-15

    We systematically investigated the effective surface anisotropy of CoFe{sub 2}O{sub 4} nanoparticles dependant on the thickness of SiO{sub 2} shell. XRD (X-ray powder diffraction) patterns and TEM (transmission electron microscopy) micrographs were used to investigate the structure of particles and thickness of SiO{sub 2} shell, respectively. The thicknesses of SiO{sub 2} shell with 5.41 nm on CoFe{sub 2}O{sub 4} nanoparticles were increased up to 14.04 {+-} 0.05 nm by changing the amount of added TEOS by, 0.10, 0.25, 0.50, 1.00, 1.50, and 2.50 mL. The increase of the SiO{sub 2} thickness shell decreased the effective anisotropy due to decline the effectiveness of the dipolar magnetostatic interactions, determined from Vogel-Fulcher equation, between the particles. The declines in the Keff values stabled at around 3.76 {+-} 0.11 Multiplication-Sign 10{sup 5} J/m{sup 3} for TEOS amount higher than 1.5 mL.

  15. Surface anisotropy change of CoFe2O4 nanoparticles depending on thickness of coated SiO2 shell

    International Nuclear Information System (INIS)

    Coşkun, Mustafa; Can, Musa Mutlu; Coşkun, Özlem Duyar; Korkmaz, Mustafa; Fırat, Tezer

    2012-01-01

    We systematically investigated the effective surface anisotropy of CoFe 2 O 4 nanoparticles dependant on the thickness of SiO 2 shell. XRD (X-ray powder diffraction) patterns and TEM (transmission electron microscopy) micrographs were used to investigate the structure of particles and thickness of SiO 2 shell, respectively. The thicknesses of SiO 2 shell with 5.41 nm on CoFe 2 O 4 nanoparticles were increased up to 14.04 ± 0.05 nm by changing the amount of added TEOS by, 0.10, 0.25, 0.50, 1.00, 1.50, and 2.50 mL. The increase of the SiO 2 thickness shell decreased the effective anisotropy due to decline the effectiveness of the dipolar magnetostatic interactions, determined from Vogel–Fulcher equation, between the particles. The declines in the Keff values stabled at around 3.76 ± 0.11 × 10 5 J/m 3 for TEOS amount higher than 1.5 mL.

  16. Effect of Si Content on Oxide Formation on Surface of Molten Fe-Cr-C Alloy Bath During Oxygen Top Blowing

    Science.gov (United States)

    Mihara, Ryosuke; Gao, Xu; Kim, Sun-joong; Ueda, Shigeru; Shibata, Hiroyuki; Seok, Min Oh; Kitamura, Shin-ya

    2018-02-01

    Using a direct observation experimental method, the oxide formation behavior on the surface of Fe-Cr-5 mass pct C-Si alloy baths during decarburization by a top-blown Ar-O2 mixture was studied. The effects of the initial Si and Cr content of the alloy, temperature, and oxygen feed ratio on oxide formation were investigated. The results showed that, for alloys without Si, oxide particles, unstable oxide films, and stable oxide films formed sequentially. The presence of Si in the alloy changed the formation behavior of stable oxide film, and increased the crucial C content when stable oxide film started to form. Increasing the temperature, decreasing the initial Cr content, and increasing the ratio of the diluting gas decreased the critical C content at which a stable oxide film started to form. In addition, the P CO and a_{{{Cr}2 {O}3 }} values at which oxides started to form were estimated using Hilty's equation and the equilibrium relation to understand the formation conditions and the role of each parameter in oxide formation.

  17. Real time nanoscale structural evaluation of gold structures on Si (100) surface using in-situ transmission electron microscopy

    International Nuclear Information System (INIS)

    Rath, A.; Juluri, R. R.; Satyam, P. V.

    2014-01-01

    Transport behavior of gold nanostructures on Si(100) substrate during annealing under high vacuum has been investigated using in-situ real time transmission electron microscopy (TEM). A comparative study has been done on the morphological changes due to annealing under different vacuum environments. Au thin films of thickness ∼2.0 nm were deposited on native oxide covered silicon substrate by using thermal evaporation system. In-situ real time TEM measurements at 850 °C showed the isotropic growth of rectangular/square shaped gold-silicon alloy structures. During the growth, it is observed that the alloying occurs in liquid phase followed by transformation into the rectangular shapes. For similar system, ex-situ annealing in low vacuum (10 −2 millibars) at 850 °C showed the spherical gold nanostructures with no Au-Si alloy formation. Under low vacuum annealing conditions, the rate of formation of the oxide layer dominates the oxide desorption rate, resulting in the creation of a barrier layer between Au and Si, which restricts the inter diffusion of Au in to Si. This work demonstrates the important role of interfacial oxide layer on the growth of nanoscale Au-Si alloy structures during the initial growth. The time dependent TEM images are presented to offer a direct insight into the fundamental dynamics of the sintering process at the nanoscale

  18. Evolvement of cell-substrate interaction over time for cells cultivated on a 3-aminopropyltriethoxysilane (γ-APTES) modified silicon dioxide (SiO2) surface

    Science.gov (United States)

    Hsu, Chung-Ping; Hsu, Po-Yen; Wu, You-Lin; Hsu, Wan-Yun; Lin, Jing-Jenn

    2012-09-01

    Since cell-substrate interaction is directly related to the traction force of the cell, the cell property can be judged from the imprint it leaves on the soft substrate surface onto which the cell is cultured. In this letter, the evolvement of the cell-substrate interaction over time was observed by cultivating cells on a 3-aminopropyltriethoxysilane (γ-APTES) modified silicon dioxide (SiO2) surface for different periods of time. The cell-substrate interaction property as a function of time can then be found from the post-cell-removal surface morphology profiles determined by atomic force microscopy (AFM). Different surface morphology profiles were found between normal cells and cancer cells. It was found that the cancer cells tend to form deeper trenches along the circumference of the imprints, while the normal cells do not. In addition, our results indicated that normal cells involve cell-substrate interaction mechanisms that are different from those for cancer cells.

  19. Time-resolved two-photon photoemission at the Si(001)-surface. Hot electron dynamics and two-dimensional Fano resonance; Zeitaufgeloeste Zweiphotonen-Photoemission an der Si(001)-Oberflaeche. Dynamik heisser Elektronen und zweidimensionaler Fano-Effekt

    Energy Technology Data Exchange (ETDEWEB)

    Eickhoff, Christian

    2010-10-27

    By combining ultrafast laser excitation with energy-, angle- and time-resolved twophoton photoemission (2PPE), the electronic properties of bulk silicon and the Si(001) surface are investigated in this thesis. A custom-built laser- and UHV-systemequipped with a display type 2D-CCD-detector gives new insight into the relaxation dynamics of excited carriers on a femtosecond timescale. The bandgap between occupied valence bands and unoccupied conduction bands characteristically influences the dynamics of excited electrons in the bulk, as well as in surface states and resonances. For the electron-phonon interaction this leads to the formation of a bottleneck during the relaxation of hot electrons in the conduction band, which maintains the elevated electronic temperature for several picoseconds. During relaxation, excited electrons also scatter from the conduction band into the unoccupied dangling-bond surface state D{sub down}. Depending on the excitation density this surface recombination is dominated by electron-electron- or electron-phonon scattering. The relaxation of the carriers in the D{sub down}-band is again slowed down by the formation of a bottleneck in electron-phonon coupling. Furthermore, the new laser system has allowed detection of the Rydberg-like series of image-potential resonances on the Si(001)-surface. It is shown that the lifetime of these image-potential resonances in front of the semiconducting surface exhibits the same behavior as those in front of metallic surfaces. Moreover the electron-phonon coupling in the first image-potential resonance was investigated and compared to the D{sub down}-surface state. For the first time, Fano-type lineprofiles are demonstrated and analyzed in a 2PPEprocess on a surface. Tuning the photon energy of the pump-laser across the resonance between the occupied dangling-bond state D{sub up}, and the unoccupied image-potential resonance n=1, reveals a clear intensity variation that can be successfully described

  20. 4f-derived Fermi surfaces of CeRu2(Si1-xGex)2 near the quantum critical point: resonant soft-X-ray ARPES study.

    Science.gov (United States)

    Okane, T; Ohkochi, T; Takeda, Y; Fujimori, S-i; Yasui, A; Saitoh, Y; Yamagami, H; Fujimori, A; Matsumoto, Y; Sugi, M; Kimura, N; Komatsubara, T; Aoki, H

    2009-05-29

    Angle-resolved photoelectron spectroscopy in the Ce 3d-->4f excitation region was measured for the paramagnetic state of CeRu2Si2, CeRu2(Si0.82Ge0.18)2, and LaRu2Si2 to investigate the changes of the 4f electron Fermi surfaces around the quantum critical point. While the difference of the Fermi surfaces between CeRu2Si2 and LaRu2Si2 was experimentally confirmed, a strong 4f-electron character was observed in the band structures and the Fermi surfaces of CeRu2Si2 and CeRu2(Si0.82Ge0.18)2, consequently indicating a delocalized nature of the 4f electrons in both compounds. The absence of Fermi surface reconstruction across the critical composition suggests that SDW quantum criticality is more appropriate than local quantum criticality in CeRu2(Si1-xGex)2.

  1. Physical mechanism of surface roughening of the radial Ge-core/Si-shell nanowire heterostructure and thermodynamic prediction of surface stability of the InAs-core/GaAs-shell nanowire structure.

    Science.gov (United States)

    Cao, Y Y; Ouyang, G; Wang, C X; Yang, G W

    2013-02-13

    As a promising and typical semiconductor heterostructure at the nanoscale, the radial Ge/Si NW heterostructure, that is, the Ge-core/Si-shell NW structure, has been widely investigated and used in various nanodevices such as solar cells, lasers, and sensors because of the strong changes in the band structure and increased charge carrier mobility. Therefore, to attain high quality radial semiconductor NW heterostructures, controllable and stable epitaxial growth of core-shell NW structures has become a major challenge for both experimental and theoretical evaluation. Surface roughening is usually undesirable for the epitaxial growth of high quality radial semiconductor NW heterostructures, because it would destroy the core-shell NW structures. For example, the surface of the Ge-core/Si-shell NWs always exhibits a periodic modulation with island-like morphologies, that is, surface roughening, during epitaxial growth. Therefore, the physical understanding of the surface roughening behavior during the epitaxial growth of core-shell NW structures is essential and urgent for theoretical design and experimentally controlling the growth of high quality radial semiconductor NW heterostructures. Here, we proposed a quantitative thermodynamic theory to address the physical process of epitaxial growth of core-shell NW structures and surface roughening. We showed that the transformation from the Frank-van der Merwe mode to the Stranski-Krastanow mode during the epitaxial growth of radial semiconductor NW heterostructures is the physical origin of surface roughening. We deduced the thermodynamic criterion for the formation of the surface roughening and the phase diagram of growth and showed that the radius of the NWs and the thickness of the shell layer can not only determine the formation of the surface roughening in a core-shell NW structure, but also control the periodicity and amplitude of the surface roughness. The agreement between the theoretical results and the

  2. Minimization of spurious strains by using a Si bent-perfect-crystal monochromator: neutron surface strain scanning of a shot-peened sample

    International Nuclear Information System (INIS)

    Rebelo Kornmeier, Joana; Hofmann, Michael; Gibmeier, Jens

    2011-01-01

    Neutron strain measurements are critical at the surface. When scanning close to a sample surface, aberration peak shifts arise due to geometrical and divergence effects. These aberration peak shifts can be of the same order as the peak shifts related to residual strains. In this study it will be demonstrated that by optimizing the horizontal bending radius of a Si (4 0 0) monochromator, the aberration peak shifts from surface effects can be strongly reduced. A stress-free sample of fine-grained construction steel, S690QL, was used to find the optimal instrumental conditions to minimize aberration peak shifts. The optimized Si (4 0 0) monochromator and instrument settings were then applied to measure the residual stress depth gradient of a shot-peened SAE 4140 steel sample to validate the effectiveness of the approach. The residual stress depth profile is in good agreement with results obtained by x-ray diffraction measurements from an international round robin test (BRITE-EURAM-project ENSPED). The results open very promising possibilities to bridge the gap between x-ray diffraction and conventional neutron diffraction for non-destructive residual stress analysis close to surfaces

  3. Effect of Surface Morphology and Dispersion Media on the Properties of PEDOT:PSS/n-Si Hybrid Solar Cell Containing Functionalized Graphene

    Directory of Open Access Journals (Sweden)

    Pham Van Trinh

    2017-01-01

    Full Text Available We present the results on the effect of surface morphology and dispersion media on the properties of PEDOT:PSS/n-Si hybrid solar cell containing functionalized graphene (Gr. The hybrid solar cells based on SiNWs showed higher power conversion efficiency (PCE compared to the planar based cells due to suppressing the carrier recombination and improving carrier transport efficiency. The PCE of hybrid solar cells could be improved by adding Gr into PEDOT:PSS. Different solvents including deionized (DI water, ethylene glycol (EG, and isopropyl alcohol (IPA were used as media for Gr dispersion. The best performance was obtained for the cell containing Gr dispersed in EG with a measured PCE of 7.33% and nearly 13% and 16% enhancement in comparison with the cells using Gr dispersed in IPA and DI water, respectively. The increase in PCE is attributed to improving the carrier-mobility, electrical conductivity, PEDOT crystallinity, and ordering.

  4. High-resolution ellipsometric study of an n-alkane film, dotriacontane, adsorbed on a SiO2 surface

    DEFF Research Database (Denmark)

    Volkmann, U.G.; Pino, M.; Altamirano, L.A.

    2002-01-01

    to the interface. At still higher coverages and at temperatures below the bulk melting point at T-b=341 K, solid bulk particles coexist on top of the "perpendicular film." For higher temperatures in the range T-bT-s, a uniformly thick fluid film wets to the parallel film phase. This structure of the alkane/SiO2...

  5. Chemisorption of acetophenone on Si(111)-7 × 7. Polar aromatic molecule on electronically complex surface

    Czech Academy of Sciences Publication Activity Database

    Krejčí, Ondřej; Matvija, P.; Zimmermann, P.; Sobotík, P.; Ošt'ádal, I.; Kocán, P.

    2016-01-01

    Roč. 120, č. 17 (2016), s. 9200-9206 ISSN 1932-7447 Institutional support: RVO:68378271 Keywords : attachment * atoms * cycloaddition * adsorption * Si(001) * states * STM Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.536, year: 2016

  6. Comparative investigation of the c(2 Multiplication-Sign 2)-Si/Cu(0 1 1) and ({radical}3 Multiplication-Sign {radical}3)R30 Degree-Sign -Cu{sub 2}Si/Cu(1 1 1) surface alloys using DFT

    Energy Technology Data Exchange (ETDEWEB)

    Shuttleworth, I.G., E-mail: shuttleworth.ian@gmail.com [Jubail University College, Jubail Industrial City 31961 (Saudi Arabia)

    2012-02-01

    The electronic structure of the c(2 Multiplication-Sign 2)-Si/Cu(0 1 1) surface alloy has been investigated and compared to the structures seen in the three phases of the ({radical}3 Multiplication-Sign {radical}3)R30 Degree-Sign Cu{sub 2}Si/Cu(1 1 1) system, using LCAO-DFT. The weighted surface energy increase between the alloyed Cu(0 1 1) and Cu(1 1 1) surfaces is 126.7 meV/Si atom. This increase in energy for the (0 1 1) system when compared to the (1 1 1) system is assigned to the transition from a hexagonal to a rectangular local bonding environment for the Si ion cores, with the hexagonal environment being energetically more favorable. The Si 3s state is shown to interact covalently with the Cu 4s and 4p states whereas the Si 3p state, and to a lesser extent the Si 3d state, forms a mixture of covalent and metallic bonds with the Cu states. The Cu 4s and 4p states are shown to be altered by approximately the same amount by both the removal of Cu ion cores and the inclusion of Si ion cores during the alloying of the Cu(0 1 1) surface. However, the Cu 3d states in the surface and second layers of the alloy are shown to be more significantly altered during the alloying process by the removal of Cu ion cores from the surface layer rather than by the addition of Si ion cores. This is compared to the behavior of the Cu 3d states in the surface and second layers of the each phase of the ({radical}3 Multiplication-Sign {radical}3)R30 Degree-Sign -Cu{sub 2}Si/Cu(1 1 1) alloy and consequently the loss of Cu-Cu periodicity during alloying of the Cu(0 1 1) surface is conjectured as the driving force for changes to the Cu 3d states. The accompanying changes to the Cu 4s and 4p states in both the c(2 Multiplication-Sign 2)-Si/Cu(0 1 1) and ({radical}3 Multiplication-Sign {radical}3)R30 Degree-Sign -Cu{sub 2}Si/Cu(1 1 1) alloys are quantified and compared. The study concludes with a brief quantitative study of changes in the bond order of the Cu-Cu bonds during alloying of

  7. First principles-based adsorption comparison of group IV elements (C, Si, Ge, and Sn) on Au(111)/Ag(111) surface

    International Nuclear Information System (INIS)

    Chakraborty, Sudip; Rajesh, Ch.

    2012-01-01

    We have reported a first-principle investigation of the structural properties of monomer and dimer for group IV elements (C, Si, Ge, and Sn) adsorbed on the Au(111) and Ag(111) surfaces. The calculations were performed by means of a plane wave based pseudopotential method under the framework of density functional theory. The results reveal the preference of adatom to be adsorbed on the hexagonal closed packed site of the metal (111) surfaces with strong binding energy. The structures introduce interlayer forces in the adsorbate. The strong bonding with the surface atoms is a result of p–d hybridization. The adsorption energy follows a sequence as one goes down in the group IV elements which imply that the interaction of the group IV elements with Au/Ag is decreasing as the atomic number increases.

  8. Supramolecular self-assembly on the B-Si(111)-(√3x√3) R30° surface: From single molecules to multicomponent networks

    Science.gov (United States)

    Makoudi, Younes; Jeannoutot, Judicaël; Palmino, Frank; Chérioux, Frédéric; Copie, Guillaume; Krzeminski, Christophe; Cleri, Fabrizio; Grandidier, Bruno

    2017-09-01

    Understanding the physical and chemical processes in which local interactions lead to ordered structures is of particular relevance to the realization of supramolecular architectures on surfaces. While spectacular patterns have been demonstrated on metal surfaces, there have been fewer studies of the spontaneous organization of supramolecular networks on semiconductor surfaces, where the formation of covalent bonds between organics and adatoms usually hamper the diffusion of molecules and their subsequent interactions with each other. However, the saturation of the dangling bonds at a semiconductor surface is known to make them inert and offers a unique way for the engineering of molecular patterns on these surfaces. This review describes the physicochemical properties of the passivated B-Si(111)-(√3x√3) R30° surface, that enable the self-assembly of molecules into a rich variety of extended and regular structures on silicon. Particular attention is given to computational methods based on multi-scale simulations that allow to rationalize the relative contribution of the dispersion forces involved in the self-assembled networks observed with scanning tunneling microscopy. A summary of state of the art studies, where a fine tuning of the molecular network topology has been achieved, sheds light on new frontiers for exploiting the construction of supramolecular structures on semiconductor surfaces.

  9. Multilayer epitaxial graphene grown on the (SiC 000 1-bar ) surface; structure and electronic properties

    International Nuclear Information System (INIS)

    Sprinkle, M; Hicks, J; Tinkey, H; Clark, M C; Hass, J; Conrad, E H; Tejeda, A; Taleb-Ibrahimi, A; Le Fevre, P; Bertran, F; Soukiassian, P; Martinotti, D

    2010-01-01

    We review the progress towards developing epitaxial graphene as a material for carbon electronics. In particular, we discuss improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's (MEG's) electronic properties. Although graphene grown on both polar faces of SiC will be discussed, our discussions will focus on graphene grown on the (0 0 0 1-bar ) C-face of SiC. The unique properties of C-face MEG have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal stacked graphite sample. The origins of multilayer graphene's electronic behaviour are its unique highly ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that leads to each sheet behaving like isolated graphene planes.

  10. Synchrotron radiation induced TXRF of low Z elements on Si wafer surfaces at SSRL-comparison of excitation geometries and condition

    International Nuclear Information System (INIS)

    Streli, C.; Wobrauschek, P.; Kregsamer, P.; Pepponi, G.; Pianetta, P.; Pahlke, S.; Fabry, L.

    2000-01-01

    The determination of low Z elements, like Na and Al at ultra trace levels on Si wafer surfaces is demanded by semiconductor industry. SR-TXRF is a promising method to fulfill the task, if a special energy dispersive detector with an ultra thin window is used. Synchrotron radiation is the ideal suited excitation source for TXRF of low Z elements due to its intensive, natural collimated and linear polarized radiation with wide spectral range down to low energies even below 1 keV. TXRF offers some advantages for wafer surface analysis like nondestructive investigation and mapping capability. Experiments have been performed at SSRL beamline 3-4, a bending magnet beamline using white (<3 keV) and monochromatic radiation, as well as on beamline 3-3, using a crystal monochromator as well as a multilayer monochromator. A comparison of excitation detection geometries was performed, using a sidelooking detector with vertical positioned wafer as well as a downlooking detector with a horizontally arranged wafer. The advantages and disadvantages of the various geometries and excitation conditions are presented and the results compared. Detection limits are in the 100 fg range for Na, determined with droplet samples on Si wafer surfaces. (author)

  11. Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N2 plasma prior to SiN passivation

    Science.gov (United States)

    Liu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Yeop Majlis, Burhanuddin; Biswas, Dhrubes; Chang, Edward Yi

    2016-01-01

    An effective surface cleaning technique is demonstrated for the GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) passivation process. In this study, dilute HF solution and in situ N2 plasma treatments were adopted to remove the native oxide and recover the nitrogen-vacancy defects at the GaN surface before device passivation. To investigate the correlation between the properties of the SiN/GaN interface and the device performance, the GaN MIS-HEMTs were characterized using current-voltage (I-V) measurement, capacitance-voltage (C-V) measurement, and X-ray photoelectron spectroscopy (XPS) analysis. With the application of this surface treatment technique, the device exhibits improved I-V characteristics with low leakage current, low dynamic ON-resistance, and good C-V response with a steep slope. Overall, the results reveal that the oxide-related bonds and nitrogen-vacancy defects at the SiN/GaN interface are the root cause of the GaN MIS-HEMTs performance degradation.

  12. QCM and AFM Study of atomic scale polishing and roughening of surfaces exposed to nanoparticle suspensions of diamond, Al2O3 and SiO2.

    Science.gov (United States)

    Krim, Jacqueline; Acharya, Biplav; Chestnut, Melanie; Marek, Antonin; Shendarova, Olga; Smirnov, Alex

    The addition of nanoparticles to conventional automotive lubricants is known in many cases to result in increased energy efficiency, but the atomic scale mechanisms leading to the increased efficiency are yet to be established. To explore this issue, we studied surface uptake and nanotribological properties of nanoparticle suspensions of diamond, Al2O3 and SiO2 dispersed in water and/or oil (PAO6) in real time by means of an in situ Quartz Crystal Microbalance (QCM) technique, with a focus on the impact of the suspension on the surface roughness and texture of the QCM electrode and how the results compared to macroscopic reductions in friction and increased energy efficiency for the same materials' combinations. The frequency and dissipative properties (mechanical resistance) of QCM's with both gold and nickel surface electrodes were first studied for immersed samples upon addition of the nanoparticles. Nanodiamonds resulted in an increased mechanical resistance while the addition of Al2O3 and SiO2 nanoparticles resulted in a decreased resistance, indicating a reduced resistance of the fluid to the motion of the QCM. Atomic Force Microscope (AFM) measurements were then performed on the QCM electrodes after exposure to the suspensions, to explore potential polishing and/or roughening effects. The results are closely linked to the macroscopic friction and wear attributes. Work supported by NSF.

  13. Ternary hybrid polymeric nanocomposites through grafting of polystyrene on graphene oxide-TiO{sub 2} by surface initiated atom transfer radical polymerization (SI-ATRP)

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Arvind; Bansal, Ankushi; Behera, Babita; Jain, Suman L.; Ray, Siddharth S., E-mail: ssray@iip.res.in

    2016-04-01

    A ternary hybrid of graphene oxide-titania-polystyrene (GO-TiO{sub 2}-PS) nanocomposite is developed where polystyrene composition is regulated by controlling growth of polymer chains and nanoarchitectonics is discussed. Graphene Oxide-TiO{sub 2} (GO-TiO{sub 2}) nanocomposite is prepared by in-situ hydrothermal method and the surface is anchored with α-bromoisobutyryl bromide to activate GO-TiO{sub 2} as initiator for polymerization. In-situ grafting of polystyrene through surface initiated atom transfer radical polymerization (SI- ATRP) on this Br-functionalized nano-composite initiator yields GO-TiO{sub 2}-PS ternary hybrid. Varying the monomer amount and keeping the concentration of initiator constant, polystyrene chain growth is regulated with narrow poly-dispersivity to achieve desired composition. This composite is well characterized by various analytical techniques like FTIR, XRD, DSC, SEM, TEM, and TGA. - Highlights: • Nanocomposite of ternary hybrid of GO-TiO{sub 2} with polystyrene. • PS is surface grafted on GO-TiO{sub 2}. • Polymer chain lengths are well regulated by SI-ATRP living polymerization. • Thermal stability of this hybrid is relatively high.

  14. Synthesis of surface molecular imprinting polymer on SiO{sub 2}-coated CdTe quantum dots as sensor for selective detection of sulfadimidine

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Zhiping; Ying, Haiqin; Liu, Yanyan [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Xu, Wanzhen, E-mail: xwz09@ujs.edu.cn [School of the Environment and Safety Engineering, Jiangsu University, Zhenjiang 212013 (China); Yang, Yanfei; Luan, Yu [Zhenjiang Institute for Drug Control of Jiangsu Province, Zhenjiang 212003 (China); Lu, Yi; Liu, Tianshu [Zhenjiang Entry-Exit Inspection Quarantine Bureau, Zhenjiang 212008 (China); Yu, Shui [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Yang, Wenming, E-mail: ywm@ujs.edu.cn [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China)

    2017-05-15

    Highlights: • Surface molecular imprinting technology and SiO{sub 2}-coated CdTe QDs were combined to prepare a novel fluorescent sensor for selective detection of sulfadimidine. • The relative fluorescent intensity weakened in a linear way with the increasing concentration of sulfadimidine in the range of 10–60 μmol L{sup −1}. • The practical application of the fluorescent MIP sensor was evaluated by means of analyzing sulfadimidine in the real milk samples. The recoveries were at the range of 90.3–99.6% and the relative standard deviation ranged from 1.9 to 3.1%. - Abstract: This paper demonstrates a facile method to synthesize surface molecular imprinting polymer (MIP) on SiO{sub 2}-coated CdTe QDs for selective detection of sulfadimidine (SM{sub 2}). The fluorescent MIP sensor was prepared using cadmium telluride quantum dots (CdTe QDs) as the material of fluorescent signal readout, sulfadimidine as template molecule, 3-aminopropyltriethoxysilane (APTES) as functional monomer and tetraethyloxysilane (TEOS) as cross-linking agent. The CdTe cores were embed in the silicon shells by a sol-gel reaction and then the molecular imprinting layers were immobilized on the surface of the SiO{sub 2}-coated CdTe QDs. Under the optimized conditions, the relative fluorescent intensity weakened in a linear way with the increasing concentration of sulfadimidine in the range of 10–60 μmol L{sup −1}. The practical application of the fluorescent MIP sensor was evaluated by means of analyzing sulfadimidine in the real milk samples. The recoveries were at the range of 90.3–99.6% and the relative standard deviation (RSD) ranged from 1.9 to 3.1%, which indicates the successful synthesis of the fluorescent MIP sensor. This sensor provides an alternative solution for selective determination of sulfadimidine from real milk samples.

  15. The effects of silane-SiO2 nanocomposite films on Candida albicans adhesion and the surface and physical properties of acrylic resin denture base material.

    Science.gov (United States)

    Yodmongkol, Sirasa; Chantarachindawong, Rojcharin; Thaweboon, Sroisiri; Thaweboon, Boonyanit; Amornsakchai, Taweechai; Srikhirin, Toemsak

    2014-12-01

    Polysiloxane has been used as a coupling material in restorative dental materials for several decades. However, few studies are available on the application of polysiloxane in other dental prosthesis functions. The purpose of this study was to investigate the effects of silane-SiO2 nanocomposite films on Candida albicans adhesion and the surface and physical properties of acrylic resin denture base materials. Specimens were separated into 2 groups, uncoated and coated. They were coated with a film by using the dip-coating method. Specimens were incubated with Candida albicans 10(7) cells/mL for 1 hour, and the adherent cells were counted under an optical microscope. The following surface properties were measured: surface chemical composition with Fourier-transform infrared spectrometry, surface roughness with a surface profiler, surface energy with the sessile drop method, and surface hardness with a microhardness tester. The physical properties, including water sorption, water solubility, ultimate flexural strength, and flexural modulus, were evaluated according to International Organization for Standardization 20795-1 requirements. The adhesion of Candida albicans and the surface properties of the specimens were investigated after cleaning with effervescent tablets and brushing. An MTT assay was used to evaluate the coated specimens. The results were statistically analyzed with the Mann-Whitney U test (α=.05). A significant reduction in Candida albicans adhesion (P=.002) was observed before cleaning. In addition, the surface energy was comparable (P=.100), the surface hardness increased significantly (P=.008), and the surface roughness remained unchanged (P=.310). After cleaning with effervescent tablets, a significant decrease in Candida albicans adhesion (P=.002) and in surface roughness (P=.008) was observed; however, similar surface energies were measured (P=.100). After cleaning with a toothbrush, the adhesion of Candida albicans was significantly higher on

  16. Effect of additional sample bias in Meshed Plasma Immersion Ion Deposition (MPIID) on microstructural, surface and mechanical properties of Si-DLC films

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Mingzhong [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); School of Materials Science & Engineering, Jiamusi University, Jiamusi 154007 (China); Tian, Xiubo, E-mail: xiubotian@163.com [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); Li, Muqin [School of Materials Science & Engineering, Jiamusi University, Jiamusi 154007 (China); Gong, Chunzhi [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); Wei, Ronghua [Southwest Research Institute, San Antonio, TX 78238 (United States)

    2016-07-15

    Highlights: • A novel Meshed Plasma Immersion Ion Deposition is proposed. • The deposited Si-DLC films possess denser structures and high deposition rate. • It is attributed to ion bombardment of the deposited films. • The ion energy can be independently controlled by an additional bias (novel set up). - Abstract: Meshed Plasma Immersion Ion Deposition (MPIID) using cage-like hollow cathode discharge is a modified process of conventional PIID, but it allows the deposition of thick diamond-like carbon (DLC) films (up to 50 μm) at a high deposition rate (up to 6.5 μm/h). To further improve the DLC film properties, a new approach to the MPIID process is proposed, in which the energy of ions incident to the sample surface can be independently controlled by an additional voltage applied between the samples and the metal meshed cage. In this study, the meshed cage was biased with a pulsed DC power supply at −1350 V peak voltage for the plasma generation, while the samples inside the cage were biased with a DC voltage from 0 V to −500 V with respect to the cage to study its effect. Si-DLC films were synthesized with a mixture of Ar, C{sub 2}H{sub 2} and tetramethylsilane (TMS). After the depositions, scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectrons spectroscopy (XPS), Raman spectroscopy and nanoindentation were used to study the morphology, surface roughness, chemical bonding and structure, and the surface hardness as well as the modulus of elasticity of the Si-DLC films. It was observed that the intense ion bombardment significantly densified the films, reduced the surface roughness, reduced the H and Si contents, and increased the nanohardness (H) and modulus of elasticity (E), whereas the deposition rate decreased slightly. Using the H and E data, high values of H{sup 3}/E{sup 2} and H/E were obtained on the biased films, indicating the potential excellent mechanical and tribological properties of the films. In this

  17. Surface coating of siRNA-peptidomimetic nano-self-assemblies with anionic lipid bilayers: Enhanced gene silencing and reduced adversed effects in vitro

    DEFF Research Database (Denmark)

    Zeng, Xianghui; de Groot, A. M.; Sijts, Alice

    2015-01-01

    giving rise to net anionic liposomes. These complexes and the corresponding liposomes were optimized towards efficient gene silencing and low adverse effects. The optimal anionic liposomes mediated a high silencing effect, which was comparable to that of the control (cationic Lipofectamine 2000), and did...... not display any noticeable cytotoxicity and immunogenicity in vitro. In contrast, the corresponding nanocomplexes mediated a reduced silencing effect with a more narrow safety window. The surface coating with anionic lipid bilayers led to partial decomplexation of the siRNA–peptidomimetic nanocomplex core...

  18. Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si

    Energy Technology Data Exchange (ETDEWEB)

    Halder, Nripendra N. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Biswas, Pranab; Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Dhabal Das, Tushar; Das, Sanat Kr.; Chattopadhyay, S. [Department of Electronic Science, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009 (India); Biswas, D. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

    2014-01-28

    A detailed analysis of photoluminescence (PL) from InP quantum dots (QDs) grown on Si has been carried out to understand the effect of substrate/host material in the luminescence and carrier escape process from the surface quantum dots. Such studies are required for the development of monolithically integrated next generation III-V QD based optoelectronics with fully developed Si microelectronics. The samples were grown by atmospheric pressure metalorganic chemical vapor deposition technique, and the PL measurements were made in the temperature range 10–80 K. The distribution of the dot diameter as well as the dot height has been investigated from atomic force microscopy. The origin of the photoluminescence has been explained theoretically. The band alignment of InP/Si heterostructure has been determined, and it is found be type II in nature. The positions of the conduction band minimum of Si and the 1st excited state in the conduction band of InP QDs have been estimated to understand the carrier escape phenomenon. A blue shift with a temperature co-efficient of 0.19 meV/K of the PL emission peak has been found as a result of competitive effect of different physical processes like quantum confinement, strain, and surface states. The corresponding effect of blue shift by quantum confinement and strain as well as the red shift by the surface states in the PL peaks has been studied. The origin of the luminescence in this heterojunction is found to be due to the recombination of free excitons, bound excitons, and a transition from the 1st electron excited state in the conduction band (e{sub 1}) to the heavy hole band (hh{sub 1}). Monotonic decrease in the PL intensity due to increase of thermally escaped carriers with temperature has been observed. The change in barrier height by the photogenerated electric-field enhanced the capture of the carriers by the surface states rather than their accumulation in the QD excited state. From an analysis of the dependence of

  19. Initial Adsorption of Fe on an Ethanol-Saturated Si(111)7 × 7 Surface: Statistical Analysis in Scanning Tunneling Microscopy

    Science.gov (United States)

    Yang, Haoyu; Hattori, Ken

    2018-03-01

    We studied the initial stage of iron deposition on an ethanol-saturated Si(111)7 × 7 surface at room temperature using scanning tunneling microscopy (STM). The statistical analysis of the Si adatom height at empty states for Si(111)-C2H5OH before and after the Fe deposition showed different types of adatoms: type B (before the deposition) and type B' (after the deposition) assigned to bare adatoms, type D and type D' to C2H5O-terminated adatoms, and type E' to adatoms with Fe. The analysis of the height distribution revealed the protection of the molecule termination for the Fe capture at the initial stage. The analysis also indicated the preferential capture of a single Fe atom to a bare center-adatom rather than a bare corner-adatom which remain after the C2H5OH saturation, but no selectivity was observed in faulted and unfaulted half unit-cells. This is the first STM-based report proving that a remaining bare adatom, but not a molecule-terminated adatom, captures a metal.

  20. Morphological stability of 4H-SiC crystals in solution growth on {0001} and {1 1 ̅0m } surfaces

    Science.gov (United States)

    Mitani, Takeshi; Komatsu, Naoyoshi; Hayashi, Yuichiro; Kato, Tomohisa; Okumura, Hajime

    2017-06-01

    For solution growth of 4H-SiC, the surface morphology of the crystals grown on {0001 } and {1 1 ̅0m } (m=0‒4, 10 and 20) surfaces was systematically investigated. For short-term growth for 30 min on {0001 } and {1 1 ̅0m } (m=0 and 2) seeds, the height of the macrosteps was less than 400 nm, and terraces having the same crystallographic orientation as the seeds were formed. In contrast, the growth surfaces on {1 1 ̅0m } (m=4, 10 and 20) seeds became rough owing to the surface reconstruction with the {1 1 ̅02 } and {0001} planes, suggesting the morphological stability of the {1 1 ̅0m } (m=0 and 2) planes. Long-term morphological stability was examined by bulk growth experiments for 24 h. A smooth growth surface was obtained on both (1 ̅10 1 ̅) and (1 ̅10 2 ̅) seeds. Surface roughening owing to the macrostep faceting was observed for the long-term growth on (000 1 ̅) and (1 1 ̅00) seeds, whereas smooth step-terrace surfaces were obtained for the short-term growth on these planes. We also found that surface roughening tended to increase in the step-flow directions in which the angle formed by the original growth surface and a faceted slope of large macrosteps is large. Among the (1 ̅10 m ̅) (m=1 and 2) planes, growth on a (1 ̅10 1 ̅) plane exhibited the smoothest surface even after long-term growth with several millimeters in thickness.

  1. Effect of 100 MeV Ag{sup +7} ion irradiation on the bulk and surface magnetic properties of Co–Fe–Si thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hysen, T., E-mail: hysenthomas@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Department of Physics, Christian College, Chengannur, Kerala 689 122 (India); Geetha, P. [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Al-Harthi, Salim; Al-Omari, I.A. [Department of Physics, College of Science, Sultan Qaboos University, Al Khod 123 (Oman); Lisha, R. [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Ramanujan, R.V. [School of Materials Science and Engineering, Nanyang Technological University, Singapore 639 798 (Singapore); Sakthikumar, D. [Graduate School of Interdisciplinary New Science, Toyo University, Kawagoe (Japan); Avasthi, D.K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Anantharaman, M.R., E-mail: mra@cusat.ac.in [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India)

    2014-12-15

    Thin films of Co–Fe–Si were vacuum evaporated on pre-cleaned float glass substrates employing thermal evaporation. The films were subsequently irradiated with 100 MeV Ag{sup +7} ions at fluences of 1×10{sup 11}, 1×10{sup 12} and 1×10{sup 13} ions/cm{sup 2}. The pristine and irradiated samples were subjected to surface analysis using Atomic Force Microscopy (AFM), Vibrating Sample Magnetometry (VSM) and Magneto Optic Kerr Effect (MOKE) measurements. The as deposited film has a root mean square roughness (Rq) of 8.9 nm and an average roughness of (Ra) 5.6 nm. Irradiation of the as deposited films with 100 MeV Ag{sup 7+} ions modifies the surface morphology. Irradiating with ions at fluences of 1×10{sup 11} ions/cm{sup 2} smoothens the mesoscopic hill-like structures, and then, at 1×10{sup 12} ions/cm{sup 2} new surface structures are created. When the fluence is further increased to 1×10{sup 13} ions/cm{sup 2} an increase in the surface roughness is observed. The MOKE loop of as prepared film indicated a squareness ratio of 0.62. As the film is irradiated with fluences of 1×10{sup 11} ions/cm{sup 2}, 1×10{sup 12} ions/cm{sup 2} and 1×10{sup 13} ions/cm{sup 2} the squareness ratio changes to 0.76, 0.8 and 0.86 respectively. This enhancement in squareness ratio towards 1 is a typical feature when the exchange interaction starts to dominates the inherent anisotropies in the system. The variation in surface magnetisation is explained based on the variations in surface roughness with swift heavy ion (SHI) irradiation. - Highlights: • We have irradiated thermally evaporated Co–Fe–Si thin films on glass substrate with 100 MeV Ag{sup +7} ions using the 15 UD Pelletron Accelerator at IUAC, New Delhi, India. • Surface morphology and magnetic characteristics of the films can be altered with ion irradiation. • It was observed that the variation in surface magnetic properties correlates well with the changes in surface morphology, further reiterating the

  2. Deconvoluting the effects of surface chemistry and nanoscale topography: Pseudomonas aeruginosa biofilm nucleation on Si-based substrates.

    Science.gov (United States)

    Zhang, Jing; Huang, Jinglin; Say, Carmen; Dorit, Robert L; Queeney, K T

    2018-06-01

    The nucleation of biofilms is known to be affected by both the chemistry and topography of the underlying substrate, particularly when topography includes nanoscale (topography vs. chemistry is complicated by concomitant variation in both as a result of typical surface modification techniques. Analyzing the behavior of biofilm-forming bacteria exposed to surfaces with systematic, independent variation of both topography and surface chemistry should allow differentiation of the two effects. Silicon surfaces with reproducible nanotopography were created by anisotropic etching in deoxygenated water. Surface chemistry was varied independently to create hydrophilic (OH-terminated) and hydrophobic (alkyl-terminated) surfaces. The attachment and proliferation of Psuedomonas aeruginosa to these surfaces was characterized over a period of 12 h using fluorescence and confocal microscopy. The number of attached bacteria as well as the structural characteristics of the nucleating biofilm were influenced by both surface nanotopography and surface chemistry. In general terms, the presence of both nanoscale features and hydrophobic surface chemistry enhance bacterial attachment and colonization. However, the structural details of the resulting biofilms suggest that surface chemistry and topography interact differently on each of the four surface types we studied. Copyright © 2018 Elsevier Inc. All rights reserved.

  3. Nanotextured Si surfaces derived from block-copolymer self-assembly with superhydrophobic, superhydrophilic, or superamphiphobic properties

    DEFF Research Database (Denmark)

    Telecka, Agnieszka; Li, Tao; Ndoni, Sokol

    2018-01-01

    , or high aspect ratio nano-hoodoo features (overhang profile structures) with a diameter below 100 nm. The surfaces are finally functionalized with either hydrophobic surface chemistry by self-assembly from the precursor perfluorodecyltrichlorosilane (FDTS), or hydrophilic surface chemistry obtained...

  4. Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation

    Science.gov (United States)

    Zheng, Xue-Feng; Fan, Shuang; Chen, Yong-He; Kang, Di; Zhang, Jian-Kun; Wang, Chong; Mo, Jiang-Hui; Li, Liang; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

    2015-02-01

    The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor (HEMT) becomes one of the most important reliability issues with the downscaling of feature size. In this paper, the research results show that the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in the range from 298 K to 423 K. Three possible transport mechanisms are proposed and examined to explain the generation of reverse surface leakage current. By comparing the experimental data with the numerical transport models, it is found that neither Fowler-Nordheim tunneling nor Frenkel-Poole emission can describe the transport of reverse surface leakage current. However, good agreement is found between the experimental data and the two-dimensional variable range hopping (2D-VRH) model. Therefore, it is concluded that the reverse surface leakage current is dominated by the electron hopping through the surface states at the barrier layer. Moreover, the activation energy of surface leakage current is extracted, which is around 0.083 eV. Finally, the SiN passivated HEMT with a high Al composition and a thin AlGaN barrier layer is also studied. It is observed that 2D-VRH still dominates the reverse surface leakage current and the activation energy is around 0.10 eV, which demonstrates that the alteration of the AlGaN barrier layer does not affect the transport mechanism of reverse surface leakage current in this paper. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206), the New Experiment Development Funds for Xidian University, China (Grant No. SY1213), the 111 Project, China (Grant No. B12026), the Scientific Research Foundation for the Returned Overseas Chinese Scholars

  5. In situ photoemission spectroscopy using synchrotron radiation for O2 translational kinetic energy induced oxidation processes of partially-oxidized Si(001) surfaces

    International Nuclear Information System (INIS)

    Teraoka, Yuden; Yoshigoe, Akitaka

    2001-01-01

    The influence of translational kinetic energy of incident O 2 molecules for the passive oxidation process of partially-oxidized Si(001) surfaces has been studied by photoemission spectroscopy. The translational kinetic energy of O 2 molecules was controlled up to 3 eV by a supersonic seed beam technique using a high temperature nozzle. Two translational kinetic energy thresholds (1.0 eV and 2.6 eV) were found out in accordance with the first-principles calculation for the oxidation of clean surfaces. Si-2p photoemission spectra measured in representative translational kinetic energies revealed that the translational kinetic energy dependent oxidation of dimers and the second layer (subsurface) backbonds were caused by the direct dissociative chemisorption of O 2 molecules. Moreover, the difference in chemical bonds for oxygen atoms was found out to be as low and high binding energy components in O-1s photoemission spectra. Especially, the low binding energy component increased with increasing the translational kinetic energy that indicates the translational kinetic energy induced oxidation in backbonds. (author)

  6. Textured surface boron-doped ZnO transparent conductive oxides on polyethylene terephthalate substrates for Si-based thin film solar cells

    International Nuclear Information System (INIS)

    Chen Xinliang; Lin Quan; Ni Jian; Zhang Dekun; Sun Jian; Zhao Ying; Geng Xinhua

    2011-01-01

    Textured surface boron-doped zinc oxide (ZnO:B) thin films were directly grown via low pressure metal organic chemical vapor deposition (LP-MOCVD) on polyethylene terephthalate (PET) flexible substrates at low temperatures and high-efficiency flexible polymer silicon (Si) based thin film solar cells were obtained. High purity diethylzinc and water vapors were used as source materials, and diborane was used as an n-type dopant gas. P-i-n silicon layers were fabricated at ∼ 398 K by plasma enhanced chemical vapor deposition. These textured surface ZnO:B thin films on PET substrates (PET/ZnO:B) exhibit rough pyramid-like morphology with high transparencies (T ∼ 80%) and excellent electrical properties (Rs ∼ 10 Ω at d ∼ 1500 nm). Finally, the PET/ZnO:B thin films were applied in flexible p-i-n type silicon thin film solar cells (device structure: PET/ZnO:B/p-i-n a-Si:H/Al) with a high conversion efficiency of 6.32% (short-circuit current density J SC = 10.62 mA/cm 2 , open-circuit voltage V OC = 0.93 V and fill factor = 64%).

  7. Improving surface smoothness and photoluminescence of CdTe(1 1 1)A on Si(1 1 1) substrates grown by molecular beam epitaxy using Mn atoms

    International Nuclear Information System (INIS)

    Wang, Jyh-Shyang; Tsai, Yu-Hsuan; Chen, Chang-Wei; Dai, Zi-Yuan; Tong, Shih-Chang; Yang, Chu-Shou; Wu, Chih-Hung; Yuan, Chi-Tsu; Shen, Ji-Lin

    2014-01-01

    Highlights: • CdTe(1 1 1)A epilayers were grown on Si(1 1 1) substrates by molecular beam epitaxy. • We report an enhanced growth using Mn atoms. • The significant improvements in surface quality and optical properties were found. - Abstract: This work demonstrates an improvement of the molecular beam epitaxial growth of CdTe(1 1 1)A epilayer on Si(1 1 1) substrates using Mn atoms. The reflection high-energy electron diffraction patterns show that the involvement of some Mn atoms in the growth of CdTe(1 1 1)A is even more effective than the use of a buffer layer with a smooth surface for forming good CdTe(1 1 1)A epilayers. 10 K Photoluminescence spectra show that the incorporation of only 2% Mn significantly reduced the intensity of defect-related emissions and considerably increased the integral intensity of exciton-related emissions by a large factor of about 400

  8. Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure

    Directory of Open Access Journals (Sweden)

    Chien-Yu Li

    2018-01-01

    Full Text Available In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H2 plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the AlxOx guard ring structure deposited by the atomic layer deposition (ALD at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the AlxOx guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V, a low reverse leakage current density (≤72 μA/mm2@100 V, and a Schottky barrier height of 1.074 eV.

  9. Saddle-like topological surface states on the T T'X family of compounds (T , T' = Transition metal, X =Si , Ge)

    Science.gov (United States)

    Singh, Bahadur; Zhou, Xiaoting; Lin, Hsin; Bansil, Arun

    2018-02-01

    Topological nodal-line semimetals are exotic conductors that host symmetry-protected conducting nodal lines in their bulk electronic spectrum and nontrivial drumhead states on the surface. Based on first-principles calculations and an effective model analysis, we identify the presence of topological nodal-line semimetal states in the low crystalline symmetric T T'X family of compounds (T ,T' = transition metal, X = Si or Ge) in the absence of spin-orbit coupling (SOC). Taking ZrPtGe as an exemplar system, we show that owing to small lattice symmetry this material harbors a single nodal line on the ky=0 plane with large energy dispersion and unique drumhead surface state with a saddlelike energy dispersion. When the SOC is included, the nodal line gaps out and the system transitions to a strong topological insulator state with Z2=(1 ;000 ) . The topological surface state evolves from the drumhead surface state via the sharing of its saddlelike energy dispersion within the bulk energy gap. These features differ remarkably from those of the currently known topological surface states in topological insulators such as Bi2Se3 with Dirac-cone-like energy dispersions.

  10. Investigation on Selective Laser Melting AlSi10Mg Cellular Lattice Strut: Molten Pool Morphology, Surface Roughness and Dimensional Accuracy

    Directory of Open Access Journals (Sweden)

    Xuesong Han

    2018-03-01

    Full Text Available AlSi10Mg inclined struts with angle of 45° were fabricated by selective laser melting (SLM using different scanning speed and hatch spacing to gain insight into the evolution of the molten pool morphology, surface roughness, and dimensional accuracy. The results show that the average width and depth of the molten pool, the lower surface roughness and dimensional deviation decrease with the increase of scanning speed and hatch spacing. The upper surface roughness is found to be almost constant under different processing parameters. The width and depth of the molten pool on powder-supported zone are larger than tha