High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth
Shen, Chao
2016-08-25
III-nitride LEDs are fundamental components for visible-light communication (VLC). However, the modulation bandwidth is inherently limited by the relatively long carrier lifetime. In this letter, we present the 405 nm emitting superluminescent diode (SLD) with tilted facet design on semipolar GaN substrate, showing a broad emission of ∼9 nm at 20 mW optical power. Owing to the fast recombination (τ<0.35 ns) through the amplified spontaneous emission, the SLD exhibits a significantly large 3-dB bandwidth of 807 MHz. A data rate of 1.3 Gbps with a bit-error rate of 2.9 × 10 was obtained using on-off keying modulation scheme, suggesting the SLD being a high-speed transmitter for VLC applications.
High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth
Shen, Chao; Lee, Changmin; Ng, Tien Khee; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.
2016-01-01
III-nitride LEDs are fundamental components for visible-light communication (VLC). However, the modulation bandwidth is inherently limited by the relatively long carrier lifetime. In this letter, we present the 405 nm emitting superluminescent diode (SLD) with tilted facet design on semipolar GaN substrate, showing a broad emission of ∼9 nm at 20 mW optical power. Owing to the fast recombination (τ<0.35 ns) through the amplified spontaneous emission, the SLD exhibits a significantly large 3-dB bandwidth of 807 MHz. A data rate of 1.3 Gbps with a bit-error rate of 2.9 × 10 was obtained using on-off keying modulation scheme, suggesting the SLD being a high-speed transmitter for VLC applications.
Study on superluminescent diodes using InGaAs-InAs chirped quantum dots
Energy Technology Data Exchange (ETDEWEB)
Han, Il Ki; Heo, Du Chang; Song, Jin Dong; Lee, Jung Il [Korea Institute Science and Technology, Seoul (Korea, Republic of); Lee, Joo In [Korea Research Institute of Standards and Science, Daejeon (Korea, Republic of)
2004-11-15
We have fabricated superluminescent diodes (SLD) by using InGaAs-InAs chirped quantum dots (QD). The spectral bandwidth of the SLD was measured to be 170 nm. These results explain the possibility of QD-based SLD exceeding the performance of multi-quantum well-based ones.
Energy Technology Data Exchange (ETDEWEB)
Ding Ying [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)]. E-mail: yingding@red.semi.ac.cn; Zhou Fan [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Chen Weixi [School of Physics, Peking University, Beijing 100871 (China); Wang Wei [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
2007-01-15
A novel unselective regrowth buried heterostructure (BH) long-wavelength superluminescent diode (SLD), which has a grade-strained bulk InGaAs active region, was developed by metalorganic vapor-phase epitaxy (MOVPE). The 3 dB emission spectrum bandwidth of the SLD is about 65 nm with the range from 1596 to 1661 nm at 90 mA and from 1585 to 1650 nm at 150 mA.An output power of 3.5 mW is obtained at 200 mA injection current under CW operation at room temperature.
Characteristics of chirped quantum dot superluminescent diodes
Energy Technology Data Exchange (ETDEWEB)
Bae, H.C.; Park, H.L. [Department of Physics, Yonsei University, Seoul 120-749 (Korea); You, Y.C. [Department of Information and Communication Engineering, Sungkyunkwan University, Seoul 440-746 (Korea); Han, I.K. [Nano Device Research Center, Korea Institute of Science and Technology, Seoul 130-650 (Korea); Kim, J.S. [Department of Image System Science and Engineering, Pukyong National University, Pusan Department of Image System Science and Engineering, Pukyong National University, Pusan 608-739 (Korea)
2009-04-15
We compared the superluminescent diodes (SLDs) of two types in order to see the effect of embedding another quantum dots (QDs) layer. The insertion of another QDs layer showed a new possibility for a wider spectrum. In addition, through comparing two kinds of SLD structures, the peak positions of the ground state and excited state were observed to be affected differently by band-filling, thermal effect, and the overlap of tails of excited state (ES) gain, according to the wafer structure, and the effect of the cap layer is superior to the carrier non-uniformity. We also revealed the temperature sensitivity of carriers in QDs through measuring characteristic temperature. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Shen, Chao
2016-05-25
A high-brightness, droop-free, and speckle-free InGaN/GaN quantum well blue superluminescent diode (SLD) was demonstrated on a semipolar (2021) GaN substrate. The 447-nm emitting SLD has a broad spectral linewidth of 6.3 nm at an optical power of 123 mW. A peak optical power of 256 mW was achieved at 700 mA CW injection current. By combining YAG:Ce phosphor, SLD-generated white light shows a color-rendering index (CRI) of 68.9 and a correlated color temperature (CCT) of 4340 K. The measured frequency response of the SLD revealed a -3 dB bandwidth of 560 MHz, thus demonstrating the feasibility of the device for both solid-state lighting (SSL) and visible-light communication (VLC) applications. © 2016 Optical Society of America.
Shen, Chao; Ng, Tien Khee; Leonard, John T.; Pourhashemi, Arash; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.; Alyamani, Ahmed Y.; El-desouki, Munir M.; Ooi, Boon S.
2016-01-01
A high-brightness, droop-free, and speckle-free InGaN/GaN quantum well blue superluminescent diode (SLD) was demonstrated on a semipolar (2021) GaN substrate. The 447-nm emitting SLD has a broad spectral linewidth of 6.3 nm at an optical power of 123 mW. A peak optical power of 256 mW was achieved at 700 mA CW injection current. By combining YAG:Ce phosphor, SLD-generated white light shows a color-rendering index (CRI) of 68.9 and a correlated color temperature (CCT) of 4340 K. The measured frequency response of the SLD revealed a -3 dB bandwidth of 560 MHz, thus demonstrating the feasibility of the device for both solid-state lighting (SSL) and visible-light communication (VLC) applications. © 2016 Optical Society of America.
Orthogonal linear polarization tunable-beat ring laser with a superluminescent diode
Energy Technology Data Exchange (ETDEWEB)
Takahashi, Y.; Yoshino, T. [Department of Electronic Engineering, Faculty of Engineering, Gunma University, 1-5-1 Tenjin-cho, Kiryu, Gunma 376 (Japan)
1997-09-01
An orthogonal linear polarization operated ring laser with a superluminescent diode has been demonstrated to generate a tunable optical beat signal. The ring cavity contains a superluminescent diode as the optical gain medium, Faraday rotators, and a variable phase retarder (Babinet-Soleil compensator). By controlling the retarder, we changed the beat frequency in the range from a few tens of megahertz to 100 MHz. {copyright} 1997 Optical Society of America
Emission characteristics of laser and superluminescent diodes with a gradient-index waveguide
Energy Technology Data Exchange (ETDEWEB)
Bazarov, A.E.; Garmash, I.A.; Goldobin, I.S.; Eliukhin, V.A.; Pak, G.T.
1987-05-01
A study is made of the emission characteristics of laser and superluminescent diodes with gradient-index waveguides based on Al(x)Ga(1-x)As solid solutions, operating in the CW mode at room temperature. The coupling coefficients for a single-mode fiber are 25 and 18 percent for laser and superluminescent diodes, respectively, when an interface device consisting of three microlenses is used. 6 references.
Gain optimization method of a DQW superluminescent diode with broad multi-state emission
Dimas, Clara E.
2010-01-01
Optimizing gain through systematic methods of varying current injection schemes analytically is significant to maximize experimentally device yield and evaluation. Various techniques are used to calculate the amplified spontaneous emission (ASE) gain for light emitting devices consisting of single-section and multiple-sections of even length. Recently double quantum well (DQW) superluminescent diodes (SLD) have shown a broad multi-state emission due to mutlielectrodes of non-equal lengths and at high non-equal current densities. In this study, we adopt an improved method utilizing an ASE intensity ratio to calibrate a gain curve based on the sum of the measured ASE spectra to efficiently estimate the gain. Although the laser gain for GaAs/AlGaAs material is well studied, the ASE gain of SLD devices has not been systematically studied particular to further explain the multiple-state emission observed in fabricated devices. In addition a unique gain estimate was achieved where the excited state gain clamps prior to the ground state due to approaching saturation levels. In our results, high current densities in long sectioned active regions achieved sufficient un-truncated gain that show evidence of excited state emission has been observed.
Nearest-IR superluminescent diodes with a 100-nm spectral width
Energy Technology Data Exchange (ETDEWEB)
Il' chenko, S N; Ladugin, M A; Marmalyuk, Aleksandr A; Yakubovich, S D
2012-11-30
This paper presents an experimental study of quantum well superluminescent diodes with an extremely thin (InGa)As active layer. Under cw injection, the output power of such diodes is several milliwatts, with a centre wavelength of 830 nm and emission bandwidth of about 100 nm. (letters)
Yoon, Ki-Hong; Oh, Su Hwan; Kim, Ki Soo; Kwon, O-Kyun; Oh, Dae Kon; Noh, Young-Ouk; Lee, Hyung-Jong
2010-03-15
We presented a hybridly-integrated tunable external cavity laser with 0.8 nm mode spacing 16 channels operating in the direct modulation of 2.5-Gbps for a low-cost source of a WDM-PON system. The tunable laser was fabricated by using a superluminescent diode (SLD) and a polymer Bragg reflector. The maximum output power and the power slope efficiency of the tunable laser were 10.3 mW and 0.132 mW/mA, respectively, at the SLD current of 100 mA and the temperature of 25 degrees C. The directly-modulated tunable laser successfully provided 2.5-Gbps transmissions through 20-km standard single mode fiber. The power penalty of the tunable laser was less than 0.8 dB for 16 channels after a 20-km transmission. The power penalty variation was less than 1.4 dB during the blue-shifted wavelength tuning.
Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes
Liang, De-Chun; An, Qi; Jin, Peng; Li, Xin-Kun; Wei, Heng; Wu, Ju; Wang, Zhan-Guo
2011-10-01
This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAlGaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quantum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.
Broadband superluminescent diodes with bell-shaped spectra emitting in the range from 800 to 900 nm
Energy Technology Data Exchange (ETDEWEB)
Andreeva, E V; Il' ichenko, S N; Kostin, Yu O; Lapin, P I [Superlum Diodes Ltd., Moscow (Russian Federation); Ladugin, M A; Marmalyuk, A A [Open Joint-Stock Company ' M.F. Stel' makh Polyus Research and Development Institute' , Moscow (Russian Federation); Yakubovich, S D [Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)
2013-08-31
Quantum-well superluminescent diodes (SLD) with extremely thin active (AlGa)As and (InGa)As layers and centre wavelengths about 810, 840, 860 and 880 nm are experimentally studied. Their emission spectrum possesses the shape close to Gaussian, its FWHM being 30 – 60 nm depending on the length of the active channel and the level of pumping. Under cw injection, the output power of light-emitting modules based on such SLDs can amount to 1.0 – 25 mW at the output of a single-mode fibre. It is demonstrated that the operation lifetime of these devices exceeds 30000 hours. Based on the light-emitting modules the prototypes of combined BroadLighter series light sources are implemented having a bell-shaped spectrum with the width up to 100 nm. (optical radiation sources)
Visible laser and superluminescent diode based free space and underwater communications
Ooi, Boon S.
2017-01-30
We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.
Visible laser and superluminescent diode based free space and underwater communications
Ooi, Boon S.
2017-01-01
We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.
Kafar, A; Stanczyk, S; Sarzynski, M; Grzanka, S; Goss, J; Targowski, G; Nowakowska-Siwinska, A; Suski, T; Perlin, P
2016-05-02
We demonstrate InGaN/GaN superluminescent diodes with broadened emission spectra fabricated on surface-shaped bulk GaN (0001) substrates. The patterning changes the local vicinal angle linearly along the device waveguide, which results in an indium incorporation profile in InGaN quantum wells. The structure was investigated by microphotoluminescence mapping, showing a shift of central emission wavelength from 413 nm to 430 nm. Spectral full width at half maximum of processed superluminescent diodes is equal to 6.1 nm, while the reference chips show 3.4 nm. This approach may open the path for using nitride devices in applications requiring broad emission spectrum and high beam quality, such as optical coherence tomography.
Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers
Li, L.H.; Rossetti, M.; Fiore, A.; Occhi, L.; Velez, C.
2005-01-01
A superluminescent diode (SLED) using chirped multiple InAs quantum dot (QD) layers as the active region is demonstrated. The fabricated QD SLEDs exhibit a large spectral width up to 121 nm, covering the range 1165-1286 nm.
High-power quantum-dot superluminescent diodes with p-doped active region
Rossetti, M.; Li, L.; Fiore, A.; Occhi, L.; Velez, C.; Mikhrin, S.; Kovsh, A.
2006-01-01
We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Modal gain measurements and light output-current characteristics prove that p-doping is beneficial for achieving higher gain, higher output power, and better temperature stability
High tunability and superluminescence in InAs mid-infrared light emitting diodes
International Nuclear Information System (INIS)
Sherstnev, V.V.; Krier, A.; Hill, G.
2002-01-01
We report on the observation of super luminescence and high spectral current tunability (181 nm) of InAs light emitting diodes operating at 3.0 μm. The source is based on an optical whispering gallery mode which is generated near the edges of the mesa and which is responsible for the superluminescence. (author)
Kredzinski, Lukasz; Connelly, Michael J.
2011-06-01
Optical Coherence Tomography (OCT) is a promising non-invasive imaging technology capable of carrying out 3D high-resolution cross-sectional images of the internal microstructure of examined material. However, almost all of these systems are expensive, requiring the use of complex optical setups, expensive light sources and complicated scanning of the sample under test. In addition most of these systems have not taken advantage of the competitively priced optical components available at wavelength within the main optical communications band located in the 1550 nm region. A comparatively simple and inexpensive full-field OCT system (FF-OCT), based on a superluminescent diode (SLD) light source and anti-stokes imaging device was constructed, to perform 3D cross-sectional imaging. This kind of inexpensive setup with moderate resolution could be easily applicable in low-level biomedical and industrial diagnostics. This paper involves calibration of the system and determines its suitability for imaging structures of biological tissues such as teeth, which has low absorption at 1550 nm.
InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications
Directory of Open Access Journals (Sweden)
Wu Jiang
2010-01-01
Full Text Available Abstract The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100, (210, (311, and (731 substrates. A broad photoluminescence emission peak (~950 nm with a full width at half maximum (FWHM of 48 nm is obtained from the sample grown on (210 substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100 substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311 with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.
Improved emission spectrum from quantum dot superluminescent light emitting diodes
Energy Technology Data Exchange (ETDEWEB)
Li, L.H.; Rossetti, M.; Fiore, A. [Institute of Photonics and Quantum Electronics, Ecole Polytechnique Federale de Lausanne, 1015 Lausanne (Switzerland); Occhi, L.; Velez, C. [EXALOS AG, Technoparkstrasse 1, 8005 Zuerich (Switzerland)
2006-12-15
The size dispersion of InAs quantum dots (QD) was optimized to broaden the photoluminescence (PL) spectrum. A broad PL spectral width up to 96 nm is achieved from a single QD layer with InAs thickness smaller than 2.4 monolayers at a growth temperature of 510 C. QD Superluminescent light emitting diodes with an ultrawide (115 nm), smooth output spectrum are obtained by incorporating this QD layer into chirped stacked structures. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Flat-topped emission centred at 1 250 nm from quantum dot superluminescent diodes
Directory of Open Access Journals (Sweden)
R.A. Hogg
2010-01-01
Full Text Available We present a method for tailoring a broadband and flat-topped emission spectrum in quantum dot superluminescent diodes based upon modification of the dots-in-compositionally-modulated-well (DCMWELL technique. We demonstrate flat-topped emission with 95 nm full width at half maximum (FWHM, centred at 1 250 nm, and with output power in excess of 8 mW.
Single-transverse-mode near-IR superluminescent diodes with cw output power up to 100 mW
Energy Technology Data Exchange (ETDEWEB)
Andreeva, E V; Il' chenko, S N; Kostin, Yu O [Superlum Diodes Ltd., Moscow (Russian Federation); Yakubovich, S D [Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)
2014-10-29
A series of light-emitting modules based on single-mode quantum-well superluminescent diodes with centre emission wavelengths of about 790, 840, 960 and 1060 nm and a cw output power up to 100 mW in free space is developed. A sufficiently long service life of these devices is demonstrated. (lasers)
Single-transverse-mode near-IR superluminescent diodes with cw output power up to 100 mW
International Nuclear Information System (INIS)
Andreeva, E V; Il'chenko, S N; Kostin, Yu O; Yakubovich, S D
2014-01-01
A series of light-emitting modules based on single-mode quantum-well superluminescent diodes with centre emission wavelengths of about 790, 840, 960 and 1060 nm and a cw output power up to 100 mW in free space is developed. A sufficiently long service life of these devices is demonstrated. (lasers)
Quantum dot superluminescent light emitting diodes: Ideal blackbody radiators?
Energy Technology Data Exchange (ETDEWEB)
Blazek, Martin; Elsaesser, Wolfgang [Institute of Applied Physics, Darmstadt University of Technology (Germany); Hopkinson, Mark [Dept. E and E.E, University of Sheffield (United Kingdom); Krakowski, Michel [Alcatel Thales, III-V Lab. (France)
2008-07-01
Quantum dot (QD) superluminescent light emitting diodes (SLEDs) provide large optical bandwidths at desired wavelengths and are therefore promising devices for incoherent light application. The intensity noise behavior of QD SLEDs is of fundamental physical interest as it provides insight into the photon emission process. We performed high precision intensity noise measurements over several decades of optical output power. For low driving currents spontaneous emission leads to Shot Noise. For high currents we find excess noise behavior with Amplified Spontaneous Emission acting as the dominant source of noise. The QD SLEDs' noise can be described as blackbody radiation noise with a limited number of optical modes. It is therefore possible to identify the SLEDs' relevant intensity noise parameters.
Khan, Mohammed Zahed Mustafa; Majid, Mohammed Abdul; Ng, Tien Khee; Ooi, Boon S.
2013-01-01
The demonstration of high power, ultra-low ripple superluminescent diode using multiple quantum-dash-in-a-well layers with variable barrier thickness is reported. The device exhibits >20 mW power, < 0.3dB ripple, and > 80 nm 3dB bandwidth at ~1.55 μm.
Directory of Open Access Journals (Sweden)
A. B. Mukhtubayev
2015-01-01
Full Text Available We have investigated the back reflections influence on the spectrum for optical radiation source of superluminescent diode type and have provided optimal operating conditions of the radiation source. The feature of the research method is the usage of a fiber polarization controller and an optical mirror coated on the end of an optical fiber. The studies were conducted with two sources of optical radiation: ThorLabs superluminescent diode series S5FC1005SXL and LED module ELED-1550-1-E-9-SM1-FA-CW. It was revealed that at the value of back reflections equal to -13 dB relative to the output power source, a negative impact on power and spectral characteristics of the source with an optical power of 2.3 µW is beginning to appear. It was also confirmed that at the increase of the radiation power by increasing the source pumping current, back reflection influence is exhibiting at a lower level of back reflections. The results obtained need to be considered when designing fiber optic sensors in order to eliminate the effect of back reflections on the sources of optical radiation having been studied in this paper.
A novel theoretical model for broadband blue InGaN/GaN superluminescent light emitting diodes
Energy Technology Data Exchange (ETDEWEB)
Moslehi Milani, N. [Photonics-Electronics Group, Aras International Campus, University of Tabriz, Tabriz 51666-14766 (Iran, Islamic Republic of); Mohadesi, V. [Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 51665-163 (Iran, Islamic Republic of); Asgari, A., E-mail: asgari@tabrizu.ac.ir [Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 51665-163 (Iran, Islamic Republic of); School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, WA 6009 (Australia)
2015-02-07
A broadband superluminescent light emitting diode with In{sub 0.2}Ga{sub 0.8}N/GaN multiple quantum wells (MQWs) active region is investigated. The investigation is based on a theoretical model which includes the calculation of electronic states of the structure, rate equations, and the spectral radiation power. Two rate equations corresponding to MQW active region and separate confinement heterostructures layer are solved self-consistently with no-k selection wavelength dependent gain and quasi-Fermi level functions. Our results show that the superluminescence started in a current of ∼120 mA (∼7.5 kA/Cm{sup 2}) at 300 K. The range of peak emission wavelengths for different currents is 423–426 nm and the emission bandwidth is ∼5 nm in the superluminescence regime. A maximum light output power of 7.59 mW is obtained at 600 mA and the peak modal gain as a function of current indicates logarithmic behavior. Also, the comparison of our calculated results with published experimental data is shown to be in good agreement.
Wavelength characteristics of chirped quantum dot superluminescent diodes for broad spectrum
Energy Technology Data Exchange (ETDEWEB)
Bae, Hyung-Chul; Park, Hong-Lee [Yonsei University, Seoul (Korea, Republic of); You, Young-Chae [Sungkyunkwan University, Suwon (Korea, Republic of); Han, Il-Ki [Korea Institute of Science and Technology, Seoul (Korea, Republic of)
2006-04-15
A chirped InAs quantum dot superluminescent diode both with and without a In{sub 0.15}Ga{sub 0.85}As cap layer was fabricated for a broad-band spectrum. This study shows that the cap layer reduces strain and operates as a carrier capturer and that carriers excited by lattice heating also affect the radiative recombination in the quantum dots (QDs) as well as the cap layer through the characteristic temperature (T{sub 0}). In addition, by surveying peaks of each QD layers, the characteristics of carriers in QDs, such as band-filling effect and the thermal effect, were analyzed, in QDs, and a more effective method for creating a wider spectrum is proposed.
International Nuclear Information System (INIS)
Il'chenko, S N; Kostin, Yu O; Kukushkin, I A; Ladugin, M A; Lapin, P I; Lobintsov, A A; Marmalyuk, Aleksandr A; Yakubovich, S D
2011-01-01
We have studied superluminescent diodes (SLDs) and semiconductor optical amplifiers (SOAs) based on an (Al x Ga 1-x )As/GaAs single quantum well structure with an Al content x ∼ 0.1 in a 10-nm-thick active layer. Depending on the length of the active channel, the single-mode fibre coupled cw output power of the SLDs is 1 to 30 mW at a spectral width of about 50 nm. The width of the optical gain band in the active channel exceeds 40 nm. Preliminary operating life tests have demonstrated that the devices are sufficiently reliable. (lasers)
GaN-based superluminescent diodes with long lifetime
Castiglia, A.; Rossetti, M.; Matuschek, N.; Rezzonico, R.; Duelk, M.; Vélez, C.; Carlin, J.-F.; Grandjean, N.
2016-02-01
We report on the reliability of GaN-based super-luminescent light emitting diodes (SLEDs) emitting at a wavelength of 405 nm. We show that the Mg doping level in the p-type layers has an impact on both the device electro-optical characteristics and their reliability. Optimized doping levels allow decreasing the operating voltage on single-mode devices from more than 6 V to less than 5 V for an injection current of 100 mA. Furthermore, maximum output powers as high as 350 mW (for an injection current of 500 mA) have been achieved in continuous-wave operation (CW) at room temperature. Modules with standard and optimized p-type layers were finally tested in terms of lifetime, at a constant output power of 10 mW, in CW operation and at a case temperature of 25 °C. The modules with non-optimized p-type doping showed a fast and remarkable increase in the drive current during the first hundreds of hours together with an increase of the device series resistance. No degradation of the electrical characteristics was observed over 2000 h on devices with optimized p-type layers. The estimated lifetime for those devices was longer than 5000 h.
Majid, Mohammed Abdul
2015-11-12
We report on the first demonstration of InGaP/InAlGaP based orange semiconductor laser (OSL) and yellow superluminescent diode (YSLD) emitting at a wavelength of 608nm and 583nm respectively. The total output power of YSLD is ∼4.5mW which is the highest ever reported power on this material system at room-temperature.
Rossetti, M.; Li, L.; Markus, A.; Fiore, A.; Occhi, L.; Velez, C.; Mikhrin, S.; Krestnikov, I.; Kovsh, A.
2007-01-01
High-power broadband superluminescent diodes (SLDs) emitting in the 1.2-1.3-?m region are demonstrated using InAs-GaAs quantum dots (QDs). The highest output powers of ?30-50 mW are achieved using 18 QD layers with p-doped GaAs spacers. At these high powers the device operates in a regime of broad
Ghost Spectroscopy with Classical Thermal Light Emitted by a Superluminescent Diode
Janassek, Patrick; Blumenstein, Sébastien; Elsäßer, Wolfgang
2018-02-01
We propose and realize the first classical ghost-imaging (GI) experiment in the frequency or wavelength domain, thus performing ghost spectroscopy using thermal light exhibiting photon bunching. The required wavelength correlations are provided by light emitted by spectrally broadband near-infrared amplified spontaneous emission of a semiconductor-based superluminescent diode. They are characterized by wavelength-resolved intensity cross-correlation measurements utilizing two-photon-absorption interferometry. Finally, a real-world spectroscopic application of this ghost spectroscopy with a classical light scheme is demonstrated in which an absorption band of trichloromethane (chloroform) at 1214 nm is reconstructed with a spectral resolution of 10 nm as a proof-of-principle experiment. This ghost-spectroscopy work fills the gap of a hitherto missing analogy between the spatial and the spectral domain in classical GI modalities, with the expectation of contributing towards a broader dissemination of correlated photon ghost modalities, hence paving the way towards more applications which exploit the favorable advantages.
Superluminescent light emitting diodes on naturally survived InGaN/GaN lateral nanowires
Energy Technology Data Exchange (ETDEWEB)
Banerjee, D.; Sankaranarayanan, S.; Khachariya, D.; Nadar, M. B.; Ganguly, S.; Saha, D., E-mail: dipankarsaha@iitb.ac.in [Applied Quantum Mechanics Laboratory, Centre of Excellence in Nanoelectronics, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)
2016-07-18
We demonstrate a method for nanowire formation by natural selection during wet anisotropic chemical etching in boiling phosphoric acid. Nanowires of sub-10 nm lateral dimensions and lengths of 700 nm or more are naturally formed during the wet etching due to the convergence of the nearby crystallographic hexagonal etch pits. These nanowires are site controlled when formed in augmentation with dry etching. Temperature and power dependent photoluminescence characterizations confirm excitonic transitions up to room temperature. The exciton confinement is enhanced by using two-dimensional confinement whereby enforcing greater overlap of the electron-hole wave-functions. The surviving nanowires have less defects and a small temperature variation of the output electroluminescent light. We have observed superluminescent behaviour of the light emitting diodes formed on these nanowires. There is no observable efficiency roll off for current densities up to 400 A/cm{sup 2}.
Kredzinski, Lukasz; Connelly, Michael J.
2012-06-01
Full-field Optical coherence tomography is an en-face interferometric imaging technology capable of carrying out high resolution cross-sectional imaging of the internal microstructure of an examined specimen in a non-invasive manner. The presented system is based on competitively priced optical components available at the main optical communications band located in the 1550 nm region. It consists of a superluminescent diode and an anti-stokes imaging device. The single mode fibre coupled SLD was connected to a multi-mode fibre inserted into a mode scrambler to obtain spatially incoherent illumination, suitable for OCT wide-field modality in terms of crosstalk suppression and image enhancement. This relatively inexpensive system with moderate resolution of approximately 24um x 12um (axial x lateral) was constructed to perform a 3D cross sectional imaging of a human tooth. To our knowledge this is the first 1550 nm full-field OCT system reported.
Energy Technology Data Exchange (ETDEWEB)
Li, Xingji, E-mail: lxj0218@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Liu, Chaoming [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Lan, Mujie; Xiao, Liyi [Center of Micro-electronics, Harbin Institute of Technology, Harbin 150001 (China); Liu, Jianchun; Ding, Dongfa [Beijing Aerospace Times Optical-electronic Technology Co.Ltd, Beijing 100854 (China); Yang, Dezhuang; He, Shiyu [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)
2013-07-11
The degradation of optical power for superluminescent diodes is in situ measured under exposures of protons with various energies (170 keV, 3 MeV and 5 MeV), and 25 MeV carbon ions for several irradiation fluences. Experimental results show that the optical power of the SLDs decreases with increasing fluence. The protons with lower energies cause more degradation in the optical power of SLDs than those with higher energies at a given fluence. Compared to the proton irradiation with various energies, the 25 MeV carbon ions induce more severe degradation to the optical power. To characterize the radiation damage of the SLDs, the displacement doses as a function of chip depth in the SLDs are calculated by SRIM code for the protons and carbon ions. Based on the irradiation testing and calculation results, an approach is given to normalize the equivalence of displacement damage induced by various charged particles in SLDs.
Khan, Mohammed Zahed Mustafa; Alhashim, Hala H.; Ng, Tien Khee; Ooi, Boon S.
2015-01-01
We report on a flat-top and ultrawide emission bandwidth of 125 nm from InGaAsP/InP multiple quantum-well (MQW) superluminescent diode with antireflection coated and tilted ridge-waveguide device configuration. A total output power in excess of 70 mW with an average power spectral density of 0.56 mW/nm and spectral ripple ≤ 1.2 ± 0.5 dB is measured from the device. Wall-plug efficiency and output power as high as 14% and 80 mW, respectively, is demonstrated from this batch of devices. We attribute the broad emission to the inherent inhomogeneity of the electron-heavy-hole (e-hh) and electron-light-hole (e-lh) recombination of the ground state and the first excited state of the MQWs and their simultaneous emission.
Khan, Mohammed Zahed Mustafa
2015-02-01
We report on a flat-top and ultrawide emission bandwidth of 125 nm from InGaAsP/InP multiple quantum-well (MQW) superluminescent diode with antireflection coated and tilted ridge-waveguide device configuration. A total output power in excess of 70 mW with an average power spectral density of 0.56 mW/nm and spectral ripple ≤ 1.2 ± 0.5 dB is measured from the device. Wall-plug efficiency and output power as high as 14% and 80 mW, respectively, is demonstrated from this batch of devices. We attribute the broad emission to the inherent inhomogeneity of the electron-heavy-hole (e-hh) and electron-light-hole (e-lh) recombination of the ground state and the first excited state of the MQWs and their simultaneous emission.
Khan, Mohammed Zahed Mustafa
2013-10-01
We report on the quantitative evidence of simultaneous amplified spontaneous emission from the AlGaInAs/InAs/ InP-based quantum-well (Qwell) and quantum-dashes (Qdash) in a multistack dash-in-an-asymmetric-well superluminescent diode heterostructure. As a result, an emission bandwidth (full width at half-maximum) of 700 nm is achieved, covering entire O-E-S-C-L-U communication bands, and a maximum continuous wave output power of 1.3 mW, from this device structure. This demonstration paves a way to bridge entire telecommunication bands through proper optimization of device gain region, bringing significant advances and impact to a variety of cross-disciplinary field applications. © 2013 Optical Society of America.
Khan, Mohammed Zahed Mustafa; Cha, Dong Kyu; Majid, Mohammed Abdul; Ng, Tien Khee; Ooi, Boon S.
2013-01-01
We report on the quantitative evidence of simultaneous amplified spontaneous emission from the AlGaInAs/InAs/ InP-based quantum-well (Qwell) and quantum-dashes (Qdash) in a multistack dash-in-an-asymmetric-well superluminescent diode heterostructure. As a result, an emission bandwidth (full width at half-maximum) of 700 nm is achieved, covering entire O-E-S-C-L-U communication bands, and a maximum continuous wave output power of 1.3 mW, from this device structure. This demonstration paves a way to bridge entire telecommunication bands through proper optimization of device gain region, bringing significant advances and impact to a variety of cross-disciplinary field applications. © 2013 Optical Society of America.
Khan, Mohammed Zahed Mustafa
2014-08-01
We report on the high-performance characteristics from superluminescent diodes (SLDs) based on four-stack InAs/InGaAlAs chirped-barrier thickness quantum dash (Qdash) in a well structure. The active region exhibits a measured broad gain spectrum of 140 nm, with a peak modal gain of ~41 cm-1. The noncoated two-section gainabsorber broad-area and ridge-waveguide device configuration exhibits an output power of > 20 mW and > 12 mW, respectively. The corresponding -3-dB bandwidths span ~82 nm and ~72 nm, with a small spectral ripple of <; 0.2 dB, related largely to the contribution from dispersive height dash ensembles of the highly inhomogeneous active region. These C-L communication band devices will find applications in various cross-disciplinary fields of optical metrology, optical coherent tomography, etc.
Directory of Open Access Journals (Sweden)
Kai Braun
2015-05-01
Full Text Available Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunneling without optical pumping. A positive, steadily increasing bias voltage induces a step-like rise of the Stokes shifted optical signal emitted from the junction. This emission is strongly attenuated by reversing the applied bias voltage. At high bias voltage, the emission intensity depends non-linearly on the optical pump power. The enhanced emission can be modelled by rate equations taking into account hole injection from the tip (anode into the highest occupied orbital of the closest substrate-bound molecule (lower level and radiative recombination with an electron from above the Fermi level (upper level, hence feeding photons back by stimulated emission resonant with the gap mode. The system reflects many essential features of a superluminescent light emitting diode.
Optimization of Quantum-Dot Molecular Beam Epitaxy for Broad Spectral Bandwidth Devices
Majid, Mohammed Abdul
2012-12-01
The optimization of the key growth parameters for broad spectral bandwidth devices based on quantum dots is reported. A combination of atomic force microscopy, photoluminescence of test samples, and optoelectronic characterization of superluminescent diodes (SLDs) is used to optimize the growth conditions to obtain high-quality devices with large spectral bandwidth, radiative efficiency (due to a reduced defective-dot density), and thus output power. The defective-dot density is highlighted as being responsible for the degradation of device performance. An SLD device with 160 nm of bandwidth centered at 1230 nm is demonstrated.
Optimization of Quantum-Dot Molecular Beam Epitaxy for Broad Spectral Bandwidth Devices
Majid, Mohammed Abdul; Hugues, M.; Vézian, S.; Childs, D. T. D.; Hogg, R. A.
2012-01-01
The optimization of the key growth parameters for broad spectral bandwidth devices based on quantum dots is reported. A combination of atomic force microscopy, photoluminescence of test samples, and optoelectronic characterization of superluminescent diodes (SLDs) is used to optimize the growth conditions to obtain high-quality devices with large spectral bandwidth, radiative efficiency (due to a reduced defective-dot density), and thus output power. The defective-dot density is highlighted as being responsible for the degradation of device performance. An SLD device with 160 nm of bandwidth centered at 1230 nm is demonstrated.
Lifescience Database Archive (English)
Full Text Available SL (Link to library) SLD492 (Link to dictyBase) - - - Contig-U11049-1 SLD492P (Link to Original site) SLD492...F 347 SLD492Z 454 SLD492P 801 - - Show SLD492 Library SL (Link to library) Clone ID SLD492... URL http://dictycdb.biol.tsukuba.ac.jp/CSM/SL/SLD4-D/SLD492Q.Seq.d/ Representative seq. ID SLD492...P (Link to Original site) Representative DNA sequence >SLD492 (SLD492Q) /CSM/SL/SLD4-D/SLD492...nces producing significant alignments: (bits) Value SLD492 (SLD492Q) /CSM/SL/SLD4-D/SLD492
Broadband light sources using InAs quantum dots with InGaAs strain-reducing layers
Energy Technology Data Exchange (ETDEWEB)
Tsuda, Megumi; Inoue, Tomoya; Kita, Takashi; Wada, Osamu [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)
2011-02-15
We fabricated broadband superluminescent diodes (SLDs) for optical coherence tomography (OCT). We used three kinds of quantum dot (QD) layers with different emission peak wavelengths in the active region of SLD. The emission wavelength was controlled by reducing the strain in QDs; by using the In{sub 0.1}Ga{sub 0.9} As strain-reducing layer, the peak wavelength shifted toward the longer-wavelength side, and the photoluminescence peak intensity becomes strong in contrast to QDs on GaAs. By stacking these strain-controlled QD layers, the SLD device shows a broad electroluminescence spectrum with the center wavelength of 1130 nm and the spectral linewidth of approximately 240 nm at the injection of 1A caused by the increased emission intensity from the excited states. This corresponds to an resolution of 2.3 {mu}m in OCT. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Majid, Mohammed A.
2016-03-07
In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ~46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ~4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Majid, Mohammed Abdul; Al-Jabr, Ahmad; Elafandy, Rami T.; Oubei, Hassan M.; Alias, Mohd Sharizal; Alnahhas, Bayan A.; Anjum, Dalaver H.; Ng, Tien Khee; Shehata, Mohamed; Ooi, Boon S.
2016-01-01
In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ~46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ~4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
International Nuclear Information System (INIS)
Willocq, S.
1997-06-01
The authors review recent B physics results obtained in polarized e + e - interactions at the SLC by the SLD experiment. The excellent 3-D vertexing capabilities of SLD are exploited to extract precise B + and B d 0 lifetimes, as well as measurements of the time evolution of B d 0 - (anti B d 0 ) mixing
Energy Technology Data Exchange (ETDEWEB)
Tsubaki, Ippei; Harada, Yukihiro; Kita, Takashi [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)
2012-12-15
Recently, there has been an increasing interest in broadband light sources to develop a biomolecular imaging technique called optical coherence tomography (OCT). We fabricated superluminescent diodes (SLDs) using three kinds of quantum dot (QD) layers with different emission wavelength in the active region. The emission wavelength was controlled by reducing the strain in QDs by using In{sub 0.1}Ga{sub 0.9}As strain-reducing layer. The SLD device showed a broad electroluminescence spectrum with the center wavelength of 1104 nm and the spectral linewidth of 122 nm at the injection of 40 mA, which corresponds to the theoretical axial resolution of 4.4 {mu}m. To estimate the actual resolution of the OCT system using fabricated SLD, we measured the interference signal in the Michelson interferometer. An axial resolution of 5.4 {mu}m, which is close to the theoretical limit, was obtained (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Lifescience Database Archive (English)
Full Text Available SL (Link to library) SLD420 (Link to dictyBase) - - - Contig-U16325-1 SLD420E (Link... to Original site) - - - - - - SLD420E 434 Show SLD420 Library SL (Link to library) Clone ID SLD420 (Link to dict...yBase) Atlas ID - NBRP ID - dictyBase ID - Link to Contig Contig-U16325-1 Original site URL http://dict... 7 Homology vs DNA Score E Sequences producing significant alignments: (bits) Value N ( AF066071 ) Dict...yostelium discoideum SP85 (pspB) gene, comple... 860 0.0 1 ( AC117075 ) Dictyostelium
International Nuclear Information System (INIS)
Breidenbach, M.
1985-10-01
The SLD is a second generation detector for the SLAC Linear Collider (SLC). It is optimized for Z 0 physics and exploration of new physics in the Z 0 energy region. The SLD will have a CCD vertex detector, high resolution drift chambers for momentum measurement, a Cerenkov Ring Imaging Detector for particle identification, and calorimetry based on lead/liquid argon followed by an iron/gas system. The detector covers the full solid angle. 13 refs., 7 figs
SLD physics studies: Proceedings of the SLD physics week
International Nuclear Information System (INIS)
1989-10-01
This report contains papers on the following topics relating to SLD physics: electroweak parameter and QCD tests; heavy quark spectroscopy; B bar B mixing and CP violations; search for supersymmetry; search for technicolor; and search for new quarks, leptons and Z's
Observations of acoustic-wave-induced superluminescence in an argon plasma
International Nuclear Information System (INIS)
Aramyan, A.R.
2003-01-01
It is shown that in an argon discharge plasma it is possible to obtain overpopulation of certain electronic levels of atomic argon under the influence of acoustic waves. When the specified threshold is exceeded, then a superluminescence (in the form of light flashes) from the overpopulated electronic levels of atomic argon is observed
Energy Technology Data Exchange (ETDEWEB)
Schmitt, R.; Froehner, S.; Fodor, S.; Christopoulos, G. [Herz- und Gefaessklinik GmbH, Institut fuer Diagnostische und Interventionelle Radiologie, Bad Neustadt an der Saale (Germany); Kalb, K.H. [Herz- und Gefaessklinik GmbH, Bad Neustadt an der Saale (Germany). Klinik fuer Handchirurgie
2006-08-15
The partial tear of the scapholunate ligament (pre-dynamic stage of SLD) as well as the complete tear (dynamic stage) does not lead to carpal malalignment. However, if the completely ruptured ligament is accompanied by lesions of the extrinsic ligaments, both the scaphoid and the lunate are malaligned already at rest (static stage of SLD). Later, osteoarthritis will develop, beginning in the radioscaphoid compartment, progressing to the midcarpal joint, and ending in a carpal collapse (osteoarthrotic stage of SLD). Dynamic SLD is detectable only in stress views and in cinematography. The high utility of MRI for directly visualizing the injured ligament is emphasized: reparation tissue is focally enhanced at the rupture site by intravenously applied contrast agent; the individual segments of the scapholunate ligament can be visualized in direct MR arthrography, therefore allowing differentiation of partial and complete ligamentous tears. (orig.) [German] Die Teilruptur des Lig. scapholunatum (praedynamisches Stadium) und die isolierte Komplettruptur (dynamisches Stadium) fuehren zu keiner karpalen Gefuegestoerung in Ruhe. Erst wenn die Komplettruptur von Laesionen der extrinsischen Bandstabilisatoren begleitet wird, stehen das Skaphoid und Lunatum bereits in Ruhe in Fehlstellung (statisches Stadium). Spaeter kommt es zur Handgelenkarthrose, zuerst radioskaphoidal, dann mediokarpal mit Ausbildung eines karpalen Kollapses (arthrotisches Stadium). Die dynamische Instabilitaet ist nur mit Stressaufnahmen und kinematographisch nachweisbar. Die MRT vermag das rupturierte Lig. scapholunatum direkt darzustellen: Intravenoes verabreichtes Kontrastmittel reichert sich fokal am Reparationsgewebe der Rupturstelle an; mit der direkten MR-Arthrogaphie koennen die Bandsegmente besser abgegrenzt und Partial- von Komplettrupturen unterschieden werden. (orig.)
International Nuclear Information System (INIS)
Vella, E.
1992-10-01
The liquid argon calorimeter (LAC) of the SLD detector is a parallel plate -- liquid argon sampling calorimeter, used to measure particle energies in Z 0 decays at the Stanford Linear Collider. The LAC module design is based on a unique projective tower structure, in which lead plates and segmented lead tiles serve both as absorbers and electrodes. The LAC front end electronics incorporates several novel features, including extensive multiplexing and optical fiber readout, which take advantage of the low SLC beam crossing frequency. The operational performance of the LAC during the recently completed SLD physics run (which recorded over 10,000 Z 0 events) is discussed
Shen, Chao; Ng, Tien Khee; Lee, Changmin; Leonard, John T.; Nakamura, Shuji; Speck, James S.; Denbaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.
2017-01-01
III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL
Shen, Chao
2017-02-16
III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by the
Energy Technology Data Exchange (ETDEWEB)
Plano, R. [Rutgers Univ., New Brunswick, NJ (United States)
1997-01-01
This talk reviews seven SLD papers, which provide useful, unique, and precise contributions to our understanding of hadron production in the decay of Z{sup 0} produced in e{sup +}e{sup -} collisions. The data were gathered by the SLAC Large Detector (SLD) at the SLAC Linear Collider (SLC). This accelerator/detector is able to systematic advantages including a tiny and stable interaction region combined with a precise high-resolution vertex detector, excellent particle identification, and a high-resolution vertex detector, excellent particle identification, and a highly polarized electron beam. The papers include studies of: (1) factorial and cumulant moments, (2) charged multiplicities produced by b, c, and uds quarks, (3) rapidity gaps, orientations and energy partitions of three-jet events, (4) jet handedness, (5) triple-product correlation in polarized Z{sup 0} decays to three jets, and {pi}{sup {+-}}, K{sup {+-}}, p, K{sup 0}, and {Lambda} production in Z{sup 0} decays. Comparisons are made to LEP results where appropriate.
Physics at the Z pole with SLD
International Nuclear Information System (INIS)
Willocq, S.
1997-06-01
The authors review recent results from a wide physics program in polarized e + e - interactions at the SLC performed by the SLD experiment. Unique and precise measurements of the electroweak parameters A e , A b , A c , and R b provide valuable constraints on the Standard Model. The excellent 3-D vertexing capabilities of SLD are further exploited to extract precise B + and B d 0 lifetimes, as well as measurements of the time evolution of B d 0 - (anti B d 0 ) mixing. Finally, the unique capabilities of the SLC/SLD are used to test QCD in new ways. The authors present results on general properties of particle production in light, c, and b quark events, as well as the first observation of leading particle production in light-quark hemispheres
Identification and characterization of mouse PSF1-binding protein, SLD5
International Nuclear Information System (INIS)
Kong, Lingyu; Ueno, Masaya; Itoh, Machiko; Yoshioka, Katsuji; Takakura, Nobuyuki
2006-01-01
Although most somatic cells cannot proliferate, immature cells proliferate continuously to produce mature cells. Recently, we cloned mouse PSF1 from a hematopoietic stem cell specific cDNA library and reported that PSF1 is indispensable for the proliferation of immature cells. To identify the PSF1-binding protein, we used the yeast two-hybrid system with PSF1 as bait, and identified and cloned SLD5. SLD5 interacted with a central region of PSF1. Tissue distribution of SLD5 was quite similar to that of PSF1. When overexpressed, SLD5 protein was co-localized with PSF1. These data suggest that PSF1 and SLD5 may cooperate in the proliferation of immature cell populations
Physics with polarization at the SLD
International Nuclear Information System (INIS)
Burrows, P.N.
1990-05-01
The SLD detector is nearing completion and will start physics-quality data-taking at the SLC in 1991 with a longitudinally polarized electron beam and unpolarized positron beam. The current status of the detector is reviewed and the rich program of physics measurements possible with polarization and the SLD detector is briefly presented. In particular, the left-right polarization asymmetry, A LR , will be a unique measurement for the next few years and will allow tight bounds to be set upon the mass of the top quark. 14 refs., 1 fig
First results from the SLD silicon calorimeters
International Nuclear Information System (INIS)
Berridge, S.C.; Bugg, W.M.; Kroeger, R.S.; Weidemann, A.W.; White, S.L.
1992-07-01
The small-angle calorimeters of the SLD were successfully operated during the recent SLC engineering run. The Luminosity Monitor and Small-Angle Tagger (LMSAT) covers the angular region between 28 and 68 milliradians from the beam axis, while the Medium-Angle Silicon Calorimeter (MASC) covers the 68--190 milliradian region. Both are silicon-tungsten sampling calorimeters; the LMSAT employs 23 layers of 0.86 X 0 sampling, while the MASC has 10 layers of 1.74 X 0 sampling. We present results from the first run of the SLC with the SLD on beamline
Updated measurement of the tau lifetime at SLD
International Nuclear Information System (INIS)
1996-01-01
We present an updated measurement of the tau lifetime at SLD. 4316 τ-pair events, selected from a 150k Z 0 data sample, are analyzed using three techniques: decay length, impact parameter, and impact parameter difference methods. The measurement benefits from the small and stable interaction region at the SLC and the precision CCD pixel vertex detector of the SLD. The combined result is: τ τ = 288.1 ± 6.1(stat) ± 3.3(syst) fs
Highlights of the SLD Physics Program at the SLAC Linear Collider
International Nuclear Information System (INIS)
Willocq, Stephane
2001-01-01
Starting in 1989, and continuing through the 1990s, high-energy physics witnessed a flowering of precision measurements in general and tests of the standard model in particular, led by e + e - collider experiments operating at the Z 0 resonance. Key contributions to this work came from the SLD collaboration at the SLAC Linear Collider. By exploiting the unique capabilities of this pioneering accelerator and the SLD detector, including a polarized electron beam, exceptionally small beam dimensions, and a CCD pixel vertex detector, SLD produced a broad array of electroweak, heavy-flavor, and QCD measurements. Many of these results are one of a kind or represent the world's standard in precision. This article reviews the highlights of the SLD physics program, with an eye toward associated advances in experimental technique, and the contribution of these measurements to our dramatically improved present understanding of the standard model and its possible extensions
Highlights of the SLD Physics Program at the SLAC Linear Collider
Energy Technology Data Exchange (ETDEWEB)
Willocq, Stephane
2001-09-07
Starting in 1989, and continuing through the 1990s, high-energy physics witnessed a flowering of precision measurements in general and tests of the standard model in particular, led by e{sup +}e{sup -} collider experiments operating at the Z{sup 0} resonance. Key contributions to this work came from the SLD collaboration at the SLAC Linear Collider. By exploiting the unique capabilities of this pioneering accelerator and the SLD detector, including a polarized electron beam, exceptionally small beam dimensions, and a CCD pixel vertex detector, SLD produced a broad array of electroweak, heavy-flavor, and QCD measurements. Many of these results are one of a kind or represent the world's standard in precision. This article reviews the highlights of the SLD physics program, with an eye toward associated advances in experimental technique, and the contribution of these measurements to our dramatically improved present understanding of the standard model and its possible extensions.
Performance of the SLD Warm Iron Calorimeter prototype
International Nuclear Information System (INIS)
Callegari, G.; Piemontese, L.; De Sangro, R.; Peruzzi, I.; Piccolo, M.; Busza, W.; Friedman, J.; Johnson, A.; Kendall, H.; Kistiakowsky, V.
1986-03-01
A prototype hadron calorimeter, of similar design to the Warm Iron Calorimeter (WIC) planned for the SLD experiment, has been built and its performance has been studied in a test beam. The WIC is an iron sampling calorimeter whose active elements are plastic streamer tubes similar to those used for the Mont-Blanc proton decay experiment. The construction and operation of the tubes will be briefly described together with their use in an iron calorimeter - muon tracker. Efficiency, resolution and linearity have been measured in a hadron/muon beam up to 11 GeV. The measured values correspond to the SLD design goals
Drosophila Sld5 is essential for normal cell cycle progression and maintenance of genomic integrity
Energy Technology Data Exchange (ETDEWEB)
Gouge, Catherine A. [Department of Biology, East Carolina University East Carolina University, Greenville, NC 27858 (United States); Christensen, Tim W., E-mail: christensent@ecu.edu [Department of Biology, East Carolina University East Carolina University, Greenville, NC 27858 (United States)
2010-09-10
Research highlights: {yields} Drosophila Sld5 interacts with Psf1, PPsf2, and Mcm10. {yields} Haploinsufficiency of Sld5 leads to M-phase delay and genomic instability. {yields} Sld5 is also required for normal S phase progression. -- Abstract: Essential for the normal functioning of a cell is the maintenance of genomic integrity. Failure in this process is often catastrophic for the organism, leading to cell death or mis-proliferation. Central to genomic integrity is the faithful replication of DNA during S phase. The GINS complex has recently come to light as a critical player in DNA replication through stabilization of MCM2-7 and Cdc45 as a member of the CMG complex which is likely responsible for the processivity of helicase activity during S phase. The GINS complex is made up of 4 members in a 1:1:1:1 ratio: Psf1, Psf2, Psf3, And Sld5. Here we present the first analysis of the function of the Sld5 subunit in a multicellular organism. We show that Drosophila Sld5 interacts with Psf1, Psf2, and Mcm10 and that mutations in Sld5 lead to M and S phase delays with chromosomes exhibiting hallmarks of genomic instability.
Measurement of the polarized forward-backward asymmetry of s-quarks at SLD
International Nuclear Information System (INIS)
Narita, Shinya
1998-03-01
This thesis presents a direct measurement of the parity-violating parameter A s by analyzing the polarized forward-backward asymmetry of s quarks in e + e - → Z 0 → s anti s. The author has used the data taken at the Stanford Linear Accelerator Center (SLAC), from the SLAC Large Detector (SLD), which records the products of e + e - interactions at a center of mass energy √s = 91.2 GeV at the SLAC Linear Collider (SLC). The unique features of the SLC/SLD experimental apparatus provide interesting tests of the electroweak and the QCD physics. The small, stable SLC beam spot, and the precise tracking capability of the SLD allow the isolation of light flavor events. Charged hadrons are identified over wide momentum range with the Cherenkov Ring Imaging Detector (CRID). High momentum charged kaon, Λ 0 /anti Λ 0 , and K s 0 are used to select Z 0 → s anti s events and to identify the s-quark direction. The averaged polarization was 63.0% in 1993 SLD run and 77.3% in 1994--95 run. The author obtained A s = 0.86 ± 0.17(stat.) ± 0.10(syst.). This value is consistent with the prediction from the Standard Model and with the values of A b measurements from SLD and LEP experiments
SLD liquid argon calorimeter prototype test results
International Nuclear Information System (INIS)
Dubois, R.; Eigen, G.; Au, Y.
1985-10-01
The results of the SLD test beam program for the selection of a calorimeter radiator composition within a liquid argon system are described, with emphasis on the study of the use of uranium to obtain equalization of pion and electron responses
Phosphopeptide binding by Sld3 links Dbf4-dependent kinase to MCM replicative helicase activation.
Deegan, Tom D; Yeeles, Joseph Tp; Diffley, John Fx
2016-05-02
The initiation of eukaryotic DNA replication requires the assembly of active CMG (Cdc45-MCM-GINS) helicases at replication origins by a set of conserved and essential firing factors. This process is controlled during the cell cycle by cyclin-dependent kinase (CDK) and Dbf4-dependent kinase (DDK), and in response to DNA damage by the checkpoint kinase Rad53/Chk1. Here we show that Sld3, previously shown to be an essential CDK and Rad53 substrate, is recruited to the inactive MCM double hexamer in a DDK-dependent manner. Sld3 binds specifically to DDK-phosphorylated peptides from two MCM subunits (Mcm4, 6) and then recruits Cdc45. MCM mutants that cannot bind Sld3 or Sld3 mutants that cannot bind phospho-MCM or Cdc45 do not support replication. Moreover, phosphomimicking mutants in Mcm4 and Mcm6 bind Sld3 without DDK and facilitate DDK-independent replication. Thus, Sld3 is an essential "reader" of DDK phosphorylation, integrating signals from three distinct protein kinase pathways to coordinate DNA replication during S phase. © 2016 The Authors. Published under the terms of the CC BY 4.0 license.
Bandgap Engineering of 1300 nm Quantum Dots/Quantum Well Nanostructures Based Devices
Alhashim, Hala H.
2016-05-29
conjunction with anti-reflection coating and tilted ridge-waveguide device configuration. In this regard, we achieved 125 nm linewidth from InGaAsP/InP multiple quantum well (MQW) superluminescent diode with a total output power in excess of 70 mW with an average power spectral density of 0.56 mW/nm, and a spectral ripple of ≤1.2 ± 0.5 dB. The high power and broadband SLD with flat-top emission spectrum is a desirable as optical source for noninvasive biomedical imaging techniques employing low coherence interferometry, for instance, optical coherence tomography (OCT).
Superluminescence of cadmium sulfide crystals under pulse X-ray radiation
International Nuclear Information System (INIS)
Pavlovskaya, N.G.; Tarasov, M.D.; Balakin, V.A.; Varava, V.P.; Lobov, S.I.; Surskij, O.K.; Tsukerman, V.A.
1977-01-01
Studies were made to elucidate luminescence properties of CdS crystal radiated by short pulses of braking x-ray radiation. Such a radiation causes the appearance of superluminescence. The radiation was carried out at 295 and 170 K, the radiation dose being changed from 3600 to 1600 r/pulse. At the temperature of 295 K light luminescence was registered at the wave length of 528 nm and half-width of 15 nm. While the temperature lowers, the radiation shifts to the range of shorter wave lengths, and a decrease of the spectrum half-width is observed. With the increase of radiation dose the decrease of radiation spectrum half-width is observed. Approximate calculations show that to achieve the spectrum narrowing to 1 nm at room temperature it is necessary to increase radiation dose per pulse 5-6 times
Heavy Flavor Fragmentation and Decay at SLD
Energy Technology Data Exchange (ETDEWEB)
Plano, Richard M
1999-02-24
Results on heavy quark fragmentation obtained using the SLD detector at the SLAC Linear Collider are presented. This talk will cover the ratio of vector to pseudoscalar charmed meson production, the inclusive B hadron energy distribution, the inclusive particle production in heavy jets compared to their production in light jets, and charged and neutral B meson lifetimes.
An improved inclusive measurement of Ac using the SLD detector
International Nuclear Information System (INIS)
1998-01-01
The authors report a new measurement of A c using data obtained by SLD in 1993--97. This measurement uses a vertex tag technique, where the selection of a c hemisphere is based on the reconstructed mass of the charm hadron decay vertex. The method uses the 3D vertexting capabilities of SLD's CCD vertex detector and the small and stable SLC beams to obtain a high c-event tagging efficiency and purity of 28% and 81%, respectively. Charged kaons identified by the CRID detector and the charge of the reconstructed vertex provide an efficient quark-antiquark tag. They obtain a preliminary result of A c = 0.650 ± 0.041 ± 0.033
SLD-MOSCNT: A new MOSCNT with step-linear doping profile in the source and drain regions
Tahne, Behrooz Abdi; Naderi, Ali
2017-01-01
In this paper, a new structure, step-linear doping MOSCNT (SLD-MOSCNT), is proposed to improve the performance of basic MOSCNTs. The basic structure suffers from band to band tunneling (BTBT). We show that using SLD profile for source and drain regions increases the horizontal distance between valence and conduction bands at gate to source/drain junction which reduces BTBT probability. SLD performance is compared with other similar structures which have recently been proposed to reduce BTBT such as MOSCNT with lightly-doped drain and source (LDDS), and with double-light doping in source and drain regions (DLD). The obtained results using a nonequilibrium Green’s function (NEGF) method show that the SLD-MOSCNT has the lowest leakage current, power consumption and delay time, and the highest current ratio and voltage gain. The ambipolar conduction in the proposed structure is very low and can be neglected. In addition, these structures can improve short-channel effects. Also, the investigation of cutoff frequency of the different structures shows that the SLD has the highest cutoff frequency. Device performance has been investigated for gate length from 8 to 20 nm which demonstrates all discussions regarding the superiority of the proposed structure are also valid for different channel lengths. This improvement is more significant especially for channel length less than 12 nm. Therefore, the SLD can be considered as a candidate to be used in the applications with high speed and low power consumption.
Polarized source performance in 1992 for SLC--SLD
International Nuclear Information System (INIS)
Schultz, D.; Alley, R.; Clendenin, J.; Frisch, J.; Garden, C.; Hoyt, E.; Klaisner, L.; Kulikov, A.; Prescott, C.; Saez, P.; Tang, H.; Turner, J.; Wicks, M.; Woods, M.; Yeremian, D.; Zolotorev, M.
1993-02-01
In its initial operation, the SLC Polarized Electron Source successfully met the SLC goals for 1992 for intensity and efficiency. However, the stability of the beam at the source was marginal, and the polarization was only ∼28%. The SLC goal to provide > 10,000 Z events for the SLD from polarized electrons was met
The first results from the CRID detector at SLD
International Nuclear Information System (INIS)
Va'vra, J.; Antilogus, P.; Aston, D.; Bienz, T.; Bird, F.; Dasu, S.; Dolinsky, S.; Dunwoodie, W.; hallewell, G.; Kawahara, H.; Kwon, Y.; Leith, D.W.G.S.; Mueller, G.; Muller, D.; Nagamine, T.; Pavel, T.J.; Ratcliff, B.; Rensing, P.; Schultz, D.; Shapiro, S.; Simopoulos, C.; Solodov, E.; Toge, N.; Williams, S.H.; Abe, K.; Hasegawa, K.; Hasegawa, Y.; Suekane, F.; Yuta, H.; Baird, K.; Jacques, P.; Kalelkar, M.; Plano, R.; Stamer, P.; Word, G.; Bean, A.; Caldwell, D.O.; Duboscq, J.; Huber, J.; Lu, A.; Mathys, L.; McHugh, S.; Yellin, S.; David, R.B.; Manly, S.; Snyder, J.; Sforza, M.C.; Coyle, P.; Coyne, D.; Liu, X.; Williams, D.A.; Coller, J.; Shank, J.T.; Whitaker, J.S.; d'Oliveira, A.; Johnson, R.A.; Martinez, J.; Meadows, B.; Nussbaum, M.; Santha, A.K.S.; Sokoloff, M.D.; Stockdale, I.; Turk, J.; Wilson, R.J.
1992-10-01
We report first results from the initial physics run of the Cherenkov Ring Imaging Detector (CRID) in the SLD experiment at the SLC. We describe the experimental conditions, show liquid and gas rings, report the number of photoelectrons per ring, and comment on resolution
Data acquisition system for SLD
International Nuclear Information System (INIS)
Sherden, D.J.
1985-05-01
This paper describes the data acquisition system planned for the SLD detector which is being constructed for use with the SLAC Linear Collider (SLC). An exclusively FASTBUS front-end system is used together with a VAX-based host system. While the volume of data transferred does not challenge the band-width capabilities of FASTBUS, extensive use is made of the parallel processing capabilities allowed by FASTBUS to reduce the data to a size which can be handled by the host system. The low repetition rate of the SLC allows a relatively simple software-based trigger. The principal components and overall architecture of the hardware and software are described
Measurements of Z0 Electroweak Couplings at SLD
International Nuclear Information System (INIS)
Mancinelli, Giampero
1999-01-01
In this paper we report a summary of the results of several electroweak measurements performed by the SLD experiment at the Stanford Linear Collider (SLC). Most of these results are preliminary and are based, unless otherwise indicated, on the full 1993-1998 dataset of 560,000 hadronic Z 0 decays, produced with an average electron beam polarization of 73%
A status report on the SLD data acquisition system
International Nuclear Information System (INIS)
1988-11-01
The basic design of the SLD data acquisition system and its present status are reviewed. Aspects of the design that take particular advantage of the relatively low e + e/sup /minus// cross section and the low beam crossing rate of a linear collider are explained. 14 refs., 8 figs
Precision electroweak physics with the SLD/SLC: The left-right polarization asymmetry
International Nuclear Information System (INIS)
Rowson, P.C.
1994-12-01
Following a brief review of a commonly used general framework for the analysis of radiative corrections and possible new physics, the recent precision results from the SLD/SLC are discussed and used to test the standard electroweak model. In the 1993 SLD/SLC run, the SLD recorded 50,000 Z events produced by the collision of longitudinally polarized electrons on unpolarized positrons at a center-of-mass energy of 91.26 GeV. The luminosity-weighted average polarization of the SLC electron beam was (63.0 ± 1.1)%. We measure the left-right cross-section asymmetry in Z boson production, A LR , to be 0.1628 ± 0.0071 (stat) ± 0.0028 (syst) which determines the effective weak mixing angle to be sin 2 θ W eff = 0.2292 ± 0.0009 (stat) ± 0.0004 (syst). When averaged with our 1992 result, we obtain sin 2 θ W eff = 0.2294 ± 0. 0010. This result differs from analogous LEP results at the level of about 2.5 σ. The world averages of electroweak data are comfortably in agreement with the standard model
International Nuclear Information System (INIS)
Ageeva, N. N.; Bronevoi, I. L.; Krivonosov, A. N.; Stegantsov, S. V.
2006-01-01
Self-modulation of the optical absorption spectrum is observed during the picosecond photogeneration of charge carriers and intense superluminescence in GaAs. As the picosecond delay τ of the probing pulse with respect to the pump pulse is varied in the region of τ < 0, the local points of the absorption intensification (juts) shift along the spectrum (the modulation resembles a running wave). As the value of τ is varied in the vicinity of τ = 0, the juts in the spectrum arise and disappear at approximately fixed photon energies (the modulation resembles a standing wave). At certain photon energies, the dependence of the rate of variation in the absorption coefficient dα/dτ on τ is found to be modulated by pulsations, similarly to the previously observed modulation of the picosecond stimulated emission from GaAs. Presumably, the spectrum self-modulation represents (and, thus, reveals) the modulation of the electron distribution in the conduction band. This modulation is caused by the fact that the evolution of the electron-population depletion at the bottom of the conduction band during superluminescence reflects (due to the electron-phonon interaction) on the population of the upper energy levels in the band
VXD3: The SLD vertex detector upgrade based on a 307 Mpixel CCD system
International Nuclear Information System (INIS)
1995-07-01
The SLD Collaboration is building a new CCD vertex detector (VXD3) comprising 96 3.2 Mpixel CCDs of 13 cm 2 each for a total of 307 million pixels. This system is an upgrade of the Pioneering CCD vertex detector VXD2 which has operated in SLD since 1992. The CCDs of VXD3 are mounted on beryllium ladders in three cylinders, providing three space point measurements along each track of about 5 microns resolution in all three coordinates. The design and construction of VXD3 builds on three years of successful performance of VXD2. Significant improvements are achieved with VXD3 in impact parameters resolution (about a factor of two) and acceptance (∼20%) through optimized geometry and reduced material. New readout electronics have been developed for this system. This new vertex detector will be installed in late 1995 for the future runs of SLD
Dubey, Satish Kumar; Singh Mehta, Dalip; Anand, Arun; Shakher, Chandra
2008-01-01
We demonstrate simultaneous topography and tomography of latent fingerprints using full-field swept-source optical coherence tomography (OCT). The swept-source OCT system comprises a superluminescent diode (SLD) as broad-band light source, an acousto-optic tunable filter (AOTF) as frequency tuning device, and a compact, nearly common-path interferometer. Both the amplitude and the phase map of the interference fringe signal are reconstructed. Optical sectioning of the latent fingerprint sample is obtained by selective Fourier filtering and the topography is retrieved from the phase map. Interferometry, selective filtering, low coherence and hence better resolution are some of the advantages of the proposed system over the conventional fingerprint detection techniques. The present technique is non-invasive in nature and does not require any physical or chemical processing. Therefore, the quality of the sample does not alter and hence the same fingerprint can be used for other types of forensic test. Exploitation of low-coherence interferometry for fingerprint detection itself provides an edge over other existing techniques as fingerprints can even be lifted from low-reflecting surfaces. The proposed system is very economical and compact.
Rice, Ashley; Oprisan, Ana; Oprisan, Sorinel; Rice-Oprisan College of Charleston Team
Nanoparticles of iron oxide have a high surface area and can be controlled by an external magnetic field. Since they have a fast response to the applied magnetic field, these systems have been used for numerous in vivo applications, such as MRI contrast enhancement, tissue repair, immunoassay, detoxification of biological fluids, hyperthermia, drug delivery, and cell separation. We performed three direct imaging experiments in order to investigate the concentration-driven fluctuations using magnetic nanoparticles in the absence and in the presence of magnetic field. Our direct imaging experimental setup involved a glass cell filled with magnetic nanocolloidal suspension and water with the concentration gradient oriented against the gravitational field and a superluminescent diode (SLD) as the light source. Nonequilibrium concentration-driven fluctuations were recorded using a direct imaging technique. We used a dynamic structure factor algorithm for image processing in order to compute the structure factor and to find the power law exponents. We saw evidence of large concentration fluctuations and permanent magnetism. Further research will use the correlation time to approximate the diffusion coefficient for the free diffusion experiment. Funded by College of Charleston Department of Undergraduate Research and Creative Activities SURF grant.
Pulse to pulse monitoring of the SLD detector
International Nuclear Information System (INIS)
Bogart, J.; Huffer, M.; Russell, J.
1993-04-01
The SLAC Linear Collider produces bunches of positrons and polarized electrons which collide at 120 hertz inside the SLD detector. A limited amount of information is collected for each pulse in the modules which do real-time data acquisition. Buffers of approximately ten seconds' worth of this monitor data are periodically delivered to a VAX. The generation and uses of the monitor data will be discussed
The limited streamer tubes system for the SLD warm iron calorimeter
International Nuclear Information System (INIS)
Benvenuti, A.C.; Camanzi, B.; Piemontese, L.; Zucchelli, P.; Calcaterra, A.; De Sangro, R.; De Simone, P.; De Simone, S.; Gallinaro, M.; Peruzzi, I.; Piccolo, M.; Bacchetta, N.; Bisello, D.; Castro, A.; Galvagni, S.; Loreti, M.; Pescara, L.; Wyss, J.; Battiston, R.; Biasini, M.; Bilei, G.M.; Checcucci, B; Mancinelli, G.; Mantovani, G.; Pauluzzi, M.; Santocchia, A.; Servoli, L.; Carpinelli, M.; Castaldi, R.; Cazzola, U.; Dell'Orso, R.; Pieroni, E.; Vannini, C.; Verdini, P.G.; Byers, B.L.; Escalera, J.; Kharakh, D.; Messner, R.L.; Zdarko, R.W.; Johnson, J.R.
1992-01-01
The SLD detector at the Stanford Linear Accelerator Center is a general purpose device for studying e + ε - interaction at the Z 0 . The SLD calorimeter system consists of two parts: a lead Liquid Argon Calorimeter (LAC) with both electromagnetic (22 radiation lengths) and hadronic sections (2.8 absorption lengths) housed inside the coil, and the Warm Ion limited streamer tubes Calorimeter (WIC) outside the coil which uses as radiator the iron of the flux return for the magnetic field. The WIC completes the measurement of the hadronic shower energy (∼85% on average is contained in the LAC) and it provides identification and tracking for muons over 99% of the solid angle. In this note we report on the construction, test and commissioning of such a large system
The data acquisition system for SLD
International Nuclear Information System (INIS)
Sherden, D.J.
1986-10-01
This paper describes the data acquisition system planned for the SLD detector, which is being constructed for use with the SLAC Linear Collider (SLC). Analog electronics, heavily incorporating hybrid and custom VLSI circuitry, is mounted on the detector itself. Extensive use is made of multiplexing through optical fibers to a FASTBUS readout system. The low repetition rate of the SLC allows a relatively simple software-based trigger. Hardware and software processors within the acquisition modules are used to reduce the large volume of data per event and to calibrate the electronics. A farm of microprocessors is used for full reconstruction of a sample of events prior to transmission to the host
International Nuclear Information System (INIS)
Messner, R.
1997-01-01
This report covers preliminary measurements from SLD on heavy quark production at the Z 0 , using 150,000 hadronic Z 0 decays accumulated during the 1993-1995 runs. A measurement of R b with a lifetime double tag is presented. The high electron beam polarization of the SLC is employed in the direct measurement of the parity-violating parameters A b and A c by use of the left-right forward-backward asymmetry. The lifetimes of B + and B 0 mesons have been measured by two analyses. The first identifies semileptonic decays of B mesons with high (p,p t ) leptons; the second analysis isolates a sample of B meson decays with a two-dimensional impact parameter tag and reconstructs the decay length and charge using a topological vertex reconstruction method
Spectral shaping for non-Gaussian source spectra in optical coherence tomography
Tripathi, R; Nassif, N. A.; Nelson, JS; Park, B.H.; de Boer, JF
2002-01-01
We present a digital spectral shaping technique to reduce the sidelobes (ringing) of the axial point-spread function in optical coherence tomography for non-Gaussian-shaped source spectra. The spectra of two superluminescent diodes were combined to generate a spectrum with significant modulation.
Status of ALR measurement at SLD
International Nuclear Information System (INIS)
Ash, W.W.
1993-11-01
The SLD Collaboration is making a precision measurement of the left-right asymmetry (A LR ) at the SLAC Linear Collider, exploiting the significantly improved luminosity and the high electron-beam polarization of over 60%. General features of the polarized source and polarimetry are described. The experimental method is briefly presented, together with the preliminary values of the raw asymmetry, which should lead to a precision in the measurement of sin 2 θ W eff of ±0.0008 ± 0.0005. The collaboration is preparing a proposal for an extended run for one million Z o s with improved polarimetry to reach an ultimate level of δ sin 2 θ W eff = ±0.00025
SLD Identification: A Survey of Methods Used by School Psychologists
Watson, Michael D., Jr.; Simon, Joan B.; Nunnley, Lenora
2016-01-01
IDEA 2004 opened the door for states, and in some cases districts, to choose among three different methods for identifying children with Specific Learning Disabilities (SLDs). This study provides an in-depth look at SLD identification practices in a state that allows school psychologists to use any of the three methods. Eighty-four school…
Energy Technology Data Exchange (ETDEWEB)
Messner, R. [Stanford Univ., CA (United States)
1997-01-01
This report covers preliminary measurements from SLD on heavy quark production at the Z{sup 0}, using 150,000 hadronic Z{sup 0} decays accumulated during the 1993-1995 runs. A measurement of R{sub b} with a lifetime double tag is presented. The high electron beam polarization of the SLC is employed in the direct measurement of the parity-violating parameters A{sub b} and A{sub c} by use of the left-right forward-backward asymmetry. The lifetimes of B{sup +} and B{sup 0} mesons have been measured by two analyses. The first identifies semileptonic decays of B mesons with high (p,p{sub t}) leptons; the second analysis isolates a sample of B meson decays with a two-dimensional impact parameter tag and reconstructs the decay length and charge using a topological vertex reconstruction method.
SLC and SLD: Experimental experience with a linear collider
International Nuclear Information System (INIS)
Breidenbach, M.
1993-08-01
The SLAC Linear Collider (SLC) is the prototype e + e - linear collider. This talk will consist of an introduction to SLC, a description of the strategy for luminosity, a description of the systems for the transport and measurement of the polarized electrons, and a description of the present performance of the SLC and planned upgrades. The detector, SLD, and the status of the polarization asymmetry measurement A LR will be described
Bs Physics at LEP, SLD, and CDF Delta m_s and Delta Gamma_s
Boix, G
2001-01-01
The current status of the experimental knowledge of $\\Bs$ meson physics is reviewed. Results from LEP and CDF on the width difference $\\dgs$ are presented, the corresponding average is found to be in good agreement with the present theoretical estimation. The $\\Bs$ oscillations have not yet been resolved, despite the progress recently achieved by SLD and ALEPH. The world combination, including results from the LEP experiments, SLD and CDF, is presented, together with the expected and observed lower limit on the $\\Bs$ oscillation frequency. A tantalizing hint of an oscillation is observed around $\\dms\\sim17 \\psin$, near future results could increase the significance of this hint.
The SLD Cerenkov Ring Imaging Detector: Progress report
International Nuclear Information System (INIS)
Ashford, V.; Bienz, T.; Bird, F.
1986-10-01
We describe test beam results from a prototype Cerenkov Ring Imaging Detector (CRID) for the SLD experiment at the SLAC Linear Collider (SLC). The system includes both liquid and gas radiators, a long drift box containing gaseous TMAE and a proportional wire chamber with charge division readout. Measurements of the multiplicity and detection resolution of Cerenkov photons, from both radiators are presented. Various design aspects of a new engineering prototype, currently under construction, are discussed and recent R and D results relevant to this effort are reported
Front-end data processing the SLD data acquisition system
International Nuclear Information System (INIS)
Nielsen, B.S.
1986-07-01
The data acquisition system for the SLD detector will make extensive use of parallel at the front-end level. Fastbus acquisition modules are being built with powerful processing capabilities for calibration, data reduction and further pre-processing of the large amount of analog data handled by each module. This paper describes the read-out electronics chain and data pre-processing system adapted for most of the detector channels, exemplified by the central drift chamber waveform digitization and processing system
The SLD Vertex Detector Upgrade (VXD3) and a study of b anti bg events
International Nuclear Information System (INIS)
Dervan, P.J.
1998-04-01
This thesis presents a variety of work concerning the design, construction and use of the SLD's vertex detector. SLD's pioneering 120 Mpixel vertex detector, VXD2, was replaced by VXD3, a 307Mpixel CCD vertex detector in january 1996. The motivation for the up-grade detector and its subsequent construction and testing are described in some detail. This work represents the collaborative work of a large number of people. The authors' work was mainly carried out at EEV on the testing of the CCDs and subsequent ladders. VXD3 was commissioned during the 1996 SLD run and performed very close to design specifications. Monitoring the position of VXD3 is crucial for reconstructing the data in the detector for physics analysis. This was carried out using a capacitive wire position monitoring system. The system indicated that VXD3 was very stable during the whole of the 1996 run, except for known controlled movements. VXD3 was aligned globally for each period in-between these known movements using the tracks from e + e - → Z 0 → hadrons. The structure of three-jet b anti bg events has been studied using hadronic Z 0 decays from the 1993--1995 SLD data. Three-jet final states were selected and the CCD-based vertex detector was used to identify two of the jets as a b or anti b. The distributions of the gluon energy and polar angle with respect to the electron beam direction were examined and were compared with perturbative QCD predictions. It was found that the QCD Parton Shower prediction was needed to describe the data well
Construction and testing of the SLD Cerenkov ring imaging detector
International Nuclear Information System (INIS)
Cavalli-Sforza, M.; Coyle, P.; Coyne, D.; Gagnon, P.; Williams, D.A.; Abe, K.; Hasegawa, K.; Suekane, F.; Yuta, H.
1990-01-01
The authors report on the construction of the Cherenkov Ring Imaging Detector (CRID) for the SLD experiment at the SLAC Linear Collider and the testing of its components. The authors include results from testing the drift boxes, liquid radiator trays, and mirrors for the barrel CRID. The authors also discuss development of the support systems essential for the operation of the CRID: gas and liquid recirculator systems and monitoring
STS-55 MS1/PLC Ross and Payload Specialist Walter work in SL-D2 module
1993-01-01
STS-55 Mission Specialist 1 (MS1) and Payload Commander (PLC) Jerry L. Ross floats near cycle ergometer and Rack 9 Anthrorack (AR) (Human Physiology Laboratory) as German Payload Specialist 1 Ulrich Walter reviews a checklist in front of Rack 11 Experiment Rack. These experiment stations and the crewmembers are in the shirt-sleeve environment of the Spacelab Deutsche 2 (SL-D2) science module onboard the Earth-orbiting Columbia, Orbiter Vehicle (OV) 102. In the background is the SL-D2 aft end cone. Behind Ross and Walter is Rack 12 Experiment Rack with Baroreflex (BA).
Final Results on Heavy Quarks at LEP and SLD
Stocchi, A
2002-01-01
In the last decade, the LEP and SLD experiments played a central role in the study of B hadrons (hadrons containing a b quark). New B hadrons have been observed ($B^0_s$, \\Lambda_b$, $\\Xi_b$ and $B^{**}$) and their production and decay properties have been measured. In this paper we will focus on measurements of the CKM matrix elements: $|V_{cb}|$, $|V_{ub}|$, $|V_{td}|$ and $|V_{ts}|$. We will show how all these measurements, together with theoretical developments, have significantly improved our knowledge on the flavour sector of the Standard Model.
The scanning Compton polarimeter for the SLD experiment
International Nuclear Information System (INIS)
Woods, M.
1996-10-01
For the 1994/95 run of the SLD experiment at SLAC, a Compton polarimeter measured the luminosity-weighted electron beam polarization to be (77.2 ± 0.5)%. This excellent accuracy is achieved by measuring the rate asymmetry of Compton-scattered electrons near the kinematic endpoint. The polarimeter takes data continuously while the electron and positron beams are in collision and achieves a statistical precision of better than 1% in a three minute run. To calibrate the polarimeter and demonstrate its accuracy, many scans are frequently done. These include scans of the laser polarization, the detector position with respect to the kinematic edge, and the laser power
The fluid systems for the SLD Cherenkov ring imaging detector
International Nuclear Information System (INIS)
Abe, K.; Hasegawa, K.; Hasegawa, Y.; Iwasaki, Y.; Suekane, F.; Yuta, H.; Baird, K.; Jacques, P.; Kalelkar, M.; Plano, R.; Stamer, P.; Word, G.; Bean, A.; Caldwell, D.O.; Duboscq, J.; Huber, J.; Lu, A.; Mathys, L.; McHugh, S.; Yellin, S.; Ben-David, R.; Manly, S.; Snyder, J.; Turk, J.; Cavalli-Sforza, M.; Coyle, P.; Coyne, D.; Gagnon, P.; Liu, X.; Schneider, M.; Williams, D.A.; Coller, J.; Shank, J.T.; Whitaker, J.S.; d'Oliveira, A.; Johnson, R.A.; Martinez, J.; Nussbaum, M.; Santha, A.K.S.; Sokoloff, M.D.; Stockdale, I.; Wilson, R.J.
1992-10-01
We describe the design and operation of the fluid delivery, monitor and control systems for the SLD barrel Cherenkov Ring Imaging Detector (CRID). The systems deliver drift gas (C 2 H 6 + TMAE), radiator gas (C 5 F 12 + N 2 ) and radiator liquid (C 6 F 14 ). Measured critical quantities such as electron lifetime in the drift gas and ultra-violet (UV) transparencies of the radiator fluids, together with the operational experience, are also reported
Random laser illumination: an ideal source for biomedical polarization imaging?
Carvalho, Mariana T.; Lotay, Amrit S.; Kenny, Fiona M.; Girkin, John M.; Gomes, Anderson S. L.
2016-03-01
Imaging applications increasingly require light sources with high spectral density (power over spectral bandwidth. This has led in many cases to the replacement of conventional thermal light sources with bright light-emitting diodes (LEDs), lasers and superluminescent diodes. Although lasers and superluminescent diodes appear to be ideal light sources due to their narrow bandwidth and power, however, in the case of full-field imaging, their spatial coherence leads to coherent artefacts, such as speckle, that corrupt the image. LEDs, in contrast, have lower spatial coherence and thus seem the natural choice, but they have low spectral density. Random Lasers are an unconventional type of laser that can be engineered to provide low spatial coherence with high spectral density. These characteristics makes them potential sources for biological imaging applications where specific absorption and reflection are the characteristics required for state of the art imaging. In this work, a Random Laser (RL) is used to demonstrate speckle-free full-field imaging for polarization-dependent imaging in an epi-illumination configuration. We compare LED and RL illumination analysing the resulting images demonstrating that the RL illumination produces an imaging system with higher performance (image quality and spectral density) than that provided by LEDs.
Performance of the SLD Barrel CRID during the 1992 physics data run
International Nuclear Information System (INIS)
Abe, K.; Hasegawa, K.; Hasegawa, Y.; Iwasaki, Y.; Suekane, F.; Toge, N.; Yuta, H.; Baird, K.; Jacques, P.; Kalelkar, M.; Plano, R.; Stamer, P.; Word, G.; Bean, A.; Caldwell, D.O.; Duboscq, J.; Huber, J.; Lu, A.; Mathys, L.; McHugh, S.; Yellin, S.; Ben-David, R.; Manly, S.; Snyder, J.; Turk, J.; Cavalli-Sforza, M.; Colye, P.; Coyne, D.; Liu, X.; Williams, D.A.; Coller, J.; Shank, J.T.; Whitaker, J.S.; d'Oliveira, A.; Johnson, R.A.; Martinez, J.; Meadows, B.; Nussbaum, M.; Santha, A.K.S.; Sokoloff, M.D.; Stockdale, I.; Wilson, R.J.
1992-11-01
The SLD Barrel Cherenkov Ring Imaging Detector was fully operational in the 1992 physics data run. The electron drift velocity and magnetic field deflection of electron trajectories have been measured. Cherenkov rings have been observed from both the liquid and gas radiators. The number and the resolution of the angle of Cherenkov photons have been measured to be approximately equal to design specifications
Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate
Directory of Open Access Journals (Sweden)
Siming Chen
2015-06-01
Full Text Available Direct integration of III–V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III–V materials and Si substrates have fundamentally limited monolithic epitaxy of III–V devices on Si substrates. Here, by using the InAlAs/GaAs strained layer superlattices (SLSs as dislocation filter layers (DFLs to reduce the density of threading dislocations. We firstly demonstrate a Si-based 1.3 µm InAs/GaAs quantum dot (QD laser that lases up to 111 °C, with a low threshold current density of 200 A/cm2 and high output power over 100 mW at room temperature. We then demonstrate the operation of InAs/GaAs QD superluminescent light emitting diodes (SLDs monolithically grown on Si substrates. The fabricated two-section SLD exhibits a 3 dB linewidth of 114 nm, centered at ~1255 nm with a corresponding output power of 2.6 mW at room temperature. Our work complements hybrid integration using wafer bonding and represents a significant milestone for direct monolithic integration of III–V light emitters on Si substrates.
Shen, Chao
2017-04-01
The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the GaN-based LDs, which is free from efficiency droop, outperform LEDs as a viable high-power light source. Conventionally, the InGaN-based LDs are grown on polar, c-plane GaN substrates. However, a relatively low differential gain limited the device performance due to a significant polarization field in the active region. Therefore, the LDs grown on nonpolar m-plane and semipolar (2021)-plane GaN substrates are posed to deliver high-efficiency owing to the entirely or partially eliminated polarization field. To date, the smart lighting and VLC functionalities have been demonstrated based on discrete devices, such as LDs, transverse-transmission modulators, and waveguide photodetectors. The integration of III-nitride photonic components, including the light emitter, modulator, absorber, amplifier, and photodetector, towards the realization of III-nitride photonic integrated circuit (PIC) offers the advantages of small-footprint, high-speed, and low power consumption, which has yet to be investigated. This dissertation presents the design, fabrication, and characterization of the multi-section InGaN laser diodes with integrated functionalities on semipolar (2021)-plane GaN substrates for enabling such photonic integration. The blue-emitting integrated waveguide modulator-laser diode (IWM-LD) exhibits a high modulation efficiency of 2.68 dB/V. A large extinction ratio of 11.3 dB is measured in the violet-emitting IWM-LD. Utilizing an integrated absorber, a high optical power (250mW), droop-free, speckle-free, and large modulation bandwidth (560MHz) blue-emitting superluminescent diode is reported. An integrated short-wavelength semiconductor optical amplifier with the laser diode at ~404 nm is demonstrated with a large gain of 5
Usher, T
2001-01-01
A preliminary 95% C.L. exclusion on the oscillation frequency of B/sub s//sup 0/-B/sub s//sup 0/ mixing is presented by combining three analyses of a sample of 400,000 hadronic Z/sup 0/ decays collected by the SLD experiment at the SLC between 1996 and 1998. All three analyses exploit the large forward-backward asymmetry of polarized Z /sup 0/ to bbdecays, as well as information from the hemisphere opposite that of the reconstructed B decay, to determine the b-hadron flavor at production. The three analyses differ in their reconstruction of the proper time and flavor of the b-hadron at decay. The first analysis performs a full reconstruction of a cascade D/sub s / meson and a partial reconstruction of the b-hadron. In the second analysis, semileptonic decays are selected and the B decay point is reconstructed by vertexing a lepton with a partially reconstructed cascade D meson. The third analysis reconstructs B decay vertices inclusively using a topological technique, with separation between B /sub s//sup 0/ ...
International Nuclear Information System (INIS)
Hoeflich, J.; McShurley, D.; Marshall, D.; Oxoby, G.; Shapiro, S.; Stiles, P.; Spencer, E.
1990-10-01
We describe the front-end electronics for the Cherenkov Ring Imaging Detector (CRID) of the SLD at the Stanford Linear Accelerator Center. The design philosophy and implementation are discussed with emphasis on the low-noise hybrid amplifiers, signal processing and data acquisition electronics. The system receives signals from a highly efficient single-photo electron detector. These signals are shaped and amplified before being stored in an analog memory and processed by a digitizing system. The data from several ADCs are multiplexed and transmitted via fiber optics to the SLD FASTBUS system. We highlight the technologies used, as well as the space, power dissipation, and environmental constraints imposed on the system. 16 refs., 10 figs
International Nuclear Information System (INIS)
Junk, T.R.
1995-11-01
This thesis presents a direct measurement of the parity-violating parameter A b by analyzing the polarized forward-backward asymmetry of b quarks in e + e - → Z 0 → b bar b. Data were taken at the Stanford Linear Accelerator Center (SLAC), with the Stanford Large Detector (SLD), which records the products of e + e - interactions at a center of mass energy √s = 91.2 GeV/c 2 at the SLAC Linear Collider (SLC). The SLC/SLD experimental apparatus provides a unique and ideal environment for measuring electroweak asymmetries. Heavy flavor decays of the Z 0 were identified inclusively by taking advantage of the long lifetime of B hadrons, the small, stable SLC beam spot, and SLD's precise tracking detectors. Two analysis techniques for measuring A b are presented: a binned fit to the left-right forward-backwards asymmetry of tagged events signed with momentum-weighted track charge, and a self-calibrating maximum-likelihood technique using momentum-weighted charge from the two hemispheres in each tagged event. From our 1994-1995 sample of 3.6 pb -1 , having a luminosity-weighted average e - polarization of 77.3%, and our 1993 sample of 1.8 pb -1 , having a luminosity-weighted polarization of 63.1%, we obtain A b = 0.848 ± 0.046(stat.) ± 0.050(syst.)
QCD tests with SLD and polarized beams
Energy Technology Data Exchange (ETDEWEB)
Strauss, M.G. [Univ. of Massachusetts, Amherst, MA (United States)
1994-12-01
The author presents a measurement of the strong coupling {alpha}{sub s} derived from multijet rates using data collected by the SLD experiment at SLAC and find that {alpha}{sub s}(M{sub Z}{sup 2}) = 0.118 {+-} 0.002(stat.) {+-} 0.003(syst.) {+-} 0.010(theory). He presents tests of the flavor independence of strong interactions via preliminary measurements of the ratios {alpha}{sub s}(b)/{alpha}{sub s}(udsc) and {alpha}{sub s}(uds)/{alpha}{sub s}(bc). In addition, the group has measured the difference in charged particle multiplicity between Z{sup 0} {yields} b{bar b} and Z{sup 0} {yields} u{bar u}, d{bar d}, s{bar s} events, and find that it supports the prediction of perturbative QCD that the multiplicity difference be independent of center-of-mass energy. Finally, the group has made a preliminary study of jet polarization using the jet handedness technique.
Measurement of the Z0 → $s\\bar{s}$ Coupling at the SLD
Energy Technology Data Exchange (ETDEWEB)
Staengle, Hermann
1999-11-24
This dissertation presents a direct measurement of the parity-violating coupling of the Z{sup 0} to strange quarks, A{sub s}, derived from e{sup +}e{sup -} collision data containing approximately 550,000 hadronic decays of polarized Z{sup 0} bosons. Data were recorded with the SLC Large Detector (SLD) at the SLAC Linear Collider (SLC) between 1993 and 1998 with an average electron beam polarization of 73% and 74% during the 1993-5 and 1996-8 run periods, respectively. Making use of several unique features of the SLC and SLD, this measurement relies on a new generation particle identification system, the Cherenkov Ring Imaging Detector, to test the Standard Model prediction of universality in the coupling of the Z{sup 0} to down-type quarks. Polarized Z{sup 0} --> s anti-s events are tagged by the presence in each event hemisphere of a high-momentum K {+-}, K{sub s}{sup 0} or Lambda{sup 0}/ anti-Lambda{sup 0} identified using particle identification and/or a mass tag. The background from heavy flavor events is suppressed with the CCD-based vertex detector. The event thrust axis is signed with the strangeness of the tagged particle to point in the direction of the initial s quark. The coupling A{sub s} is derived from a maximum likelihood fit to the polar angle distributions of the tagged s quark measured with left- and right-handed electron beams. To reduce the model dependence of the measurement, the background from u anti-u and d anti-d events as well as the analyzing power of the method for s anti-s events are constrained from the data. We obtain A{sub s} = 0.86 {+-} 0.08(stat.) {+-} 0.05(syst.). The result is consistent with both the Standard Model prediction and previous bottom quark coupling mA{sub b}, measurements performed by SLD and LEP, and therefore supports the predicted universality of the Z{sup 0} to down-type quark couplings.
Analysis and simulation of the SLD WIC [Warm Iron Calorimeter] PADS hybrid preamplifier circuitry
International Nuclear Information System (INIS)
Fox, J.D.; Horelick, D.
1990-10-01
The SLD PADS electronics consist of over 9000 channels of charge-sensitive preamplifiers followed by integrated sample/hold data storage, digitizing, and readout circuitry. This paper uses computer simulation techniques to analyze critical performance parameters of the preamplifier hybrid including its interactions with the detector system. Simulation results are presented and verified with measured performance. 6 refs., 9 figs
Lorentz angle studies for the SLD endcap Cerenkov Ring Imaging Detector
International Nuclear Information System (INIS)
Coyle, P.; Cavalli-Sforza, M.; Coyne, D.
1987-11-01
The design of the endcap Cerenkov Ring Imaging Detectors for SLD requires a detailed understanding of how electrons drift in gases under the influence of crossed electric and magnetic fields. In this report, we present recent measurements of Lorentz angles and drift velocities in gases suitable for the endcap CRID photon detectors. We compare these measurements to predictions from a theoretical model; good agreement is observed. Based on our results we present a design for detectors operating in a 0.6 Tesla transverse magnetic field. 14 refs., 10 figs., 4 tabs
Stress Levels of Kuwaiti Mothers of Children with SLD: Does Work and Educational Status Matter?
Alazemi, Saad S.; Hadadian, Azar; Merbler, John B.; Wang, Cen
2015-01-01
Existing research literature indicates that parents of children with disabilities have higher stress. The purpose of this study was to examine differences in stress levels between mothers in relation to their children with specific learning disabilities (SLD). A sub sample of 91 mothers participated in the study. The outcome of the research…
Expressive map design: OGC SLD/SE++ extension for expressive map styles
Christophe, Sidonie; Duménieu, Bertrand; Masse, Antoine; Hoarau, Charlotte; Ory, Jérémie; Brédif, Mathieu; Lecordix, François; Mellado, Nicolas; Turbet, Jérémie; Loi, Hugo; Hurtut, Thomas; Vanderhaeghe, David; Vergne, Romain; Thollot, Joëlle
2018-05-01
In the context of custom map design, handling more artistic and expressive tools has been identified as a carto-graphic need, in order to design stylized and expressive maps. Based on previous works on style formalization, an approach for specifying the map style has been proposed and experimented for particular use cases. A first step deals with the analysis of inspiration sources, in order to extract `what does make the style of the source', i.e. the salient visual characteristics to be automatically reproduced (textures, spatial arrangements, linear stylization, etc.). In a second step, in order to mimic and generate those visual characteristics, existing and innovative rendering techniques have been implemented in our GIS engine, thus extending the capabilities to generate expressive renderings. Therefore, an extension of the existing cartographic pipeline has been proposed based on the following aspects: 1- extension of the symbolization specifications OGC SLD/SE in order to provide a formalism to specify and reference expressive rendering methods; 2- separate the specification of each rendering method and its parameterization, as metadata. The main contribution has been described in (Christophe et al. 2016). In this paper, we focus firstly on the extension of the cartographic pipeline (SLD++ and metadata) and secondly on map design capabilities which have been experimented on various topographic styles: old cartographic styles (Cassini), artistic styles (watercolor, impressionism, Japanese print), hybrid topographic styles (ortho-imagery & vector data) and finally abstract and photo-realist styles for the geovisualization of costal area. The genericity and interoperability of our approach are promising and have already been tested for 3D visualization.
Component and system tests of the SLD Cerenkov Ring Imaging Detector
International Nuclear Information System (INIS)
Antilogus, P.; Bird, F.; Aston, D.; Dasu, S.; Dunwoodie, W.; Hallewell, G.; Kawahara, H.; Kwon, Y.; Leith, D.; Nagamine, T.; Pavel, T.; Muller, D.; Williams, S.; Bienz, T.; Dolinsky, S.; Solodov, E.; Coyle, P.; Cavalli-Sforza, M.; Coyne, D.; Gagnon, P.; Liu, X.; Williams, D.A.
1990-01-01
The components of the SLD barrel Cerenkov Ring Imaging Detector (CRID) are now built and are being installed. This paper reports on tests of these components, including tests of the fiber optic calibration system, detailed studies of electron drift paths on production drift boxes and detectors, tests of the dynamic gating system and its effect on drift path distortions due to space-charge, and a measurement of the electron lifetime in a production drift box. In addition, the authors report on the UV transmission of recirculated liquid freon and on the effects of CRID construction materials on electron lifetime
Component and system tests of the SLD Cerenkov Ring Imaging Detector
International Nuclear Information System (INIS)
Antilogus, P.; Aston, D.; Bienz, T.; Bird, F.; Dasu, S.; Dolinsky, S.; Dunwoodie, W.; Hallewell, G.; Kawahara, H.; Kwon, Y.; Leith, D.; Muller, D.; Nagamine, T.; Pavel, T.; Ratcliff, B.; Rensing, P.; Schultz, D.; Shapiro, S.; Simopoulos, C.; Solodov, E.; Toge, N.; Va'vra, J.; Williams, S.; Cavalli-Sforza, M.; Coyle, P.; Coyne, D.; Gagnon, P.; Liu, X.; Williams, D.A.; Whitaker, J.S.; Wilson, R.J.; Bean, A.; Caldwell, D.; Duboscq, J.; Huber, J.; Lu, A.; Mathys, L.; McHugh, S.; Witherell, M.; Yellin, S.; D'Oliveira, A.; Johnson, R.A.; Martinez, J.L.; Meadows, B.; Nussbaum, M.; Santha, A.K.S.; Shoup, A.; Stockdale, I.; Baird, K.; Jacques, P.; Kalelkar, M.; Plano, R.; Stamer, P.; Word, G.; Abe, K.; Hasegawa, K.; Suekane, F.; Yuta, H.
1991-02-01
The components of the SLD barrel Cerenkov Ring Imaging Detector (CRID) are now built and are being installed. We report on tests of these, including tests of the fiber optic calibration system, detailed studies of electron drift paths on production drift boxes and detectors, tests of the dynamic gating system and its effect on drift path distortions due to space-charge, and a measurement of the electron lifetime in a production drift box. In addition, we report on the UV transmission of recirculated liquid C 6 F 14 and on the effects of CRID construction materials on electron lifetime. 9 refs., 11 figs
Component and system tests of the SLD Cerenkov Ring Imaging Detector
International Nuclear Information System (INIS)
Antilogus, P.; Aston, D.; Bienz, T.; Bird, F.; Dasu, S.; Dolinsky, S.; Dunwoodie, W.; Hallewell, G.; Kawahara, H.; Kwon, Y.; Leith, D.; Muller, D.; Nagamine, T.; Pavel, T.; Ratcliff, B.; Rensing, P.; Schultz, D.; Shapiro, S.; Simopoulos, C.; Solodov, E.; Toge, N.; Va'vra, J.; Williams, S.; Cavalli-Sforza, M.; Coyle, P.; Coyne, D.; Gagnon, P.; Liu, X.; Williams, D.A.; Whitaker, J.S.; Wilson, R.J.; Bean, A.; Caldwell, D.; Duboscq, J.; Huber, J.; Lu, A.; Mathys, L.; McHugh, S.; Witherell, M.; Yellin, S.; d'Oliveira, A.; Johnson, R.A.; Martinez, J.; Meadows, B.; Nussbaum, M.; Santha, A.K.S.; Shoup, A.; Stockdale, I.; Jacques, P.; Kalelkar, M.; Plano, R.; Stamer, P.; Abe, K.; Hasegawa, K.; Suekane, F.; Yuta, H.
1990-10-01
The components of the SLD barrel Cerenkov Ring Imaging Detector (CRID) are now built and are being installed. We report on tests of these components, including tests of the fiber optic calibration system, detailed studies of electron drift paths on production drift boxes and detectors, tests of the dynamic gating systems and its effect on drift path distortions due to space-charge, and a measurement of the electron lifetime in a production drift box. In addition, we report on the UV transmission of recirculated liquid freon and on the effects of CRID construction materials on electron lifetime. 16 refs., 12 figs
International Nuclear Information System (INIS)
Larsen, R.S.
1985-09-01
The SLD Detector will contain five major electronics subsystems: Vertex, Drift, Liquid Argon Calorimeter, Cerenkov Ring Imaging, and Warm Iron Calorimeter. To implement the approximately 170,000 channels of electronics, extensive miniaturization and heavy use of multiplexing techniques are required. Design criteria for each subsystem, overall system architecture, and the R and D program are described
The analog processing system for the Liquid Argon Calorimeter for SLD at SLAC
International Nuclear Information System (INIS)
Haller, G.M.; Nelson, D.; Freytag, D.R.
1986-09-01
The analog processing system for the Liquid Argon Calorimeter for the SLD project at SLAC is described. Amplification, storage of the analog information, and multiplexing is realized on specially developed hybrids, which will be mounted directly on the detector. This leads to a substantial reduction of the cable plant. Test results for the amplifier and for the sampling and multiplexing hybrid (CDU hybrid) are presented. The latter hybird contains a custom monolithic device, the Calorimeter Data Unit
Energy Technology Data Exchange (ETDEWEB)
Junk, Thomas Robert [Stanford Univ., CA (United States)
1995-11-01
This thesis presents a direct measurement of the parity-violating parameter Ab by analyzing the polarized forward-backward asymmetry of b quarks in e+e- → Z0 → b$\\bar{b}$. Data were taken at the Stanford Linear Accelerator Center (SLAC), with the Stanford Large Detector (SLD), which records the products of e+e- interactions at a center of mass energy √s = 91.2 GeV/c2 at the SLAC Linear Collider (SLC). The SLC/SLD experimental apparatus provides a unique and ideal environment for measuring electroweak asymmetries. Heavy flavor decays of the Z0 were identified inclusively by taking advantage of the long lifetime of B hadrons, the small, stable SLC beam spot, and SLD`s precise tracking detectors. Two analysis techniques for measuring Ab are presented: a binned fit to the left-right forward-backwards asymmetry of tagged events signed with momentum-weighted track charge, and a self-calibrating maximum-likelihood technique using momentum-weighted charge from the two hemispheres in each tagged event. From our 1994-1995 sample of 3.6 pb-1, having a luminosity-weighted average e- polarization of 77.3%, and our 1993 sample of 1.8 pb-1, having a luminosity-weighted polarization of 63.1%, we obtain Ab = 0.848 ± 0.046(stat.) ± 0.050(syst.).
A cryogenic monitor system for the Liquid Argon Calorimeter in the SLD detector
International Nuclear Information System (INIS)
Fox, M.J.; Fox, J.D.
1988-10-01
This paper describes the monitoring electronics system design for the Liquid Argon Calorimeter (LAC) portion of the SLD detector. This system measures temperatures and liquid levels inside the LAC cryostat and transfers the results over a fiber-optic serial link to an external monitoring computer. System requirements, unique design constraints, and detailed analog, digital and software designs are presented. Fault tolerance and the requirement for a single design to work in several different operating environments are discussed. 4 refs., 3 figs., 1 tab
International Nuclear Information System (INIS)
Muller, David
1999-01-01
We present selected results on strong interaction physics from the SLD experiment at the SLAC Linear Collider. We report on several new studies of 3- and 4-jet hadronic Z 0 decays, in which jets are identified as quark, antiquark or gluon. The 3-jet Z 0 --> b anti-bg rate is sensitive to the b-quark mass; prospects for measuring m b are discussed. The gluon energy spectrum is measured over the full kinematic range, providing an improved test of QCD and limits on anomalous b anti-bg couplings. The parity violation in Z 0 --> b anti-bg decays is consistent with electroweak theory plus QCD. New tests of T- and CP-conservation at the bbg vertex are performed. A new measurement of the rate of gluon splitting into b anti-b pairs yields g b anti-b = 0.0031 ± 0.0007 (stat.)± 0.0006 (syst.) (Preliminary). We also present a number of new results on jet fragmentation into identified hadrons. The B hadron energy spectrum is measured over the full kinematic range using a new, inclusive technique, allowing stringent tests of predictions for its shape and a precise measurement of (xB) = 0.714 ± 0.005(stat.) ± 0.007(syst.) (Preliminary). A detailed study of correlations in rapidity y between pairs of identified pi ± , K ± and p/anti-p confirms that strangeness and baryon number are conserved locally, and shows local charge conservation between meson-baryon and strange-nonstrange pairs. Flavor-dependent long-range correlations are observed for all combinations of these hadron species, yielding new information on leading particle production. The first study of correlations using rapidities signed such that y > 0 corresponds to the quark direction provides additional new insights into fragmentation, including the first direct observation of baryon number ordering along the q anti-q axis
Development of a miniature multiple reference optical coherence tomography imaging device
McNamara, Paul M.; O'Riordan, Colm; Collins, Seán.; O'Brien, Peter; Wilson, Carol; Hogan, Josh; Leahy, Martin J.
2016-03-01
Multiple reference optical coherence tomography (MR-OCT) is a new technology ideally suited to low-cost, compact OCT imaging. This modality is an extension of time-domain OCT with the addition of a partial mirror in front of the reference mirror. This enables extended, simultaneous depth scanning with the relatively short sweep of a miniature voice coil motor on which the scanning mirror is mounted. Applications of this technology include biometric security, ophthalmology, personal health monitoring and non-destructive testing. This work details early-stage development of the first iteration of a miniature MR-OCT device. This device utilizes a fiber-coupled input from an off-board superluminescent diode (SLD). Typical dimensions of the module are 40 × 57 mm, but future designs are expected to be more compact. Off-the-shelf miniature optical components, voice coil motors and photodetectors are used, with the complexity of design depending on specific applications. The photonic module can be configured as either polarized or non-polarized and can include balanced detection. The photodetectors are directly connected to a printed circuit board under the module containing a transimpedance amplifier with complimentary outputs. The results shown in this work are from the non-polarized device. Assembly of the photonic modules requires extensive planning. In choosing the optical components, Zemax simulations are performed to model the beam characteristics. The physical layout is modeled using Solidworks and each component is placed and aligned via a well-designed alignment procedure involving an active-alignment pick-and-place assembly system.
Preliminary results on heavy flavor physics at SLD
Energy Technology Data Exchange (ETDEWEB)
Usher, T. [Stanford Univ., CA (United States)
1994-12-01
The author reports on preliminary heavy flavor physics results from the SLD detector at the SLAC Linear Collider. Efficient tagging of b{bar b} events is achieved with an impact parameter technique that takes advantage of the small and stable interaction point of the SLC and all charged tracks in Z{sup 0} decays. This technique is applied to samples of Z{sup 0} events collected during the 1992 and 1993 physics runs. Preliminary measurements of the ratio R{sub b} = {Gamma}(Z{sup 0} {yields} b{bar b})/{Gamma}(Z{sup 0} {yields} hadrons) and the average B hadron lifetime <{tau}{sub B}> are reported. In a sample of 27K Z{sup 0} events, values of R{sub b} = 0.235 {+-} 0.006(stat.) {+-} 0.018(syst.) and <{tau}{sub B}> = 1.53 {+-} 0.006(stat.) {+-} 0.018(syst.) are obtained. In addition, the first measurement of the left-right asymmetry A{sub b} is reported. Using a sample of 38K Z{sup 0} events with a luminosity weighted electron polarization of 62%, the author obtains a preliminary value of A{sub b} = 0.94 {+-} 0.006(stat.) {+-} 0.018(syst.).
A measurement of the tau Michel parameters at SLD
International Nuclear Information System (INIS)
Quigley, J.
1997-05-01
This thesis presents a measurement of the tau Michel parameters. This measurement utilizes the highly polarized SLC electron beam to extract these quantities directly from the measured tau decay spectra using the 1993--95 SLD sample of 4,528 tau pair events. The results are ρ e = 0.71 ± 0.14 ± 0.05, ξ e = 1.16 ± 0.52 ± 0.06, and (ξδ) e = 0.85 ± 0.43 ± 0.08 for tau decays to electrons and ρ μ = 0.54 ± 0.28 - 0.14, η μ = -0.59 ± 0.82 ± 0.45, ξ μ = 0.75 ± 0.50 ± 0.14, and (ξδ) μ = 0.82 ± 0.32 ± 0.07 for tau decays to muons. Combining all leptonic tau decays gives ρ = 0.72 ± 0.09 ± 0.03, ξ = 1.05 ± 0.35 ± 0.04, and Ξδ = 0.88 ± 0.27 ± 0.04. These results agree well with the current world average and the Standard Model
Superluminous Devices Versus Low-Level Laser for Temporomandibular Disorders
Directory of Open Access Journals (Sweden)
Sveshtarov Vasil
2018-03-01
Full Text Available The aim of this study is to compare the pain intensity reduction between the mean radiation doses per session of gallium-aluminum-arsenide (GaAIAs laser with superluminous diodes (SLD in four of the most common pain-related chronic temporomandibular disorders (TMD - local myalgia, myofascial pain, myofascial pain with a referral, and arthralgia. This study was implemented on 124 patients with pain-related temporomandibular disorders according to the DC/TMD criteria. We applied trigger point oriented near-infrared laser (785 nm, 100 s, 8 J/cm2 and SLD cluster sessions (the cluster is composed of 49 SLDs with a combination of visible red (633 nm and infrared (880 nm diodes, 200 mW, 300 s, 8 J/cm2 for the temporomandibular joints and the affected muscles. Patients were evaluated at the start of the treatment, and after the 6th session of combined phototherapy. The pain intensity scores were measured according to the Visual Analogue Scale (VAS. Our results show that the most statistically manifested pain reduction is found for the SLD dose, р = 0,000118, followed by the overall dose (laser plus SLD; р = 0,001031, and the laser dose; р = 0,030942 (ANOVA dispersion analyses. Consequently, it can be concluded that myalgia is better treated through lower doses of red light compared to infrared laser doses because SLDs combine the prooxidative effect of photons with 633 nm wavelength, a large area of exposure, sufficient tissue penetration, and some positive warming thermal impact of the SLD clusters.
Diode pumped solid state laser by two diodes
International Nuclear Information System (INIS)
Li Mingzhong; Zhang Xiaomin; Liang Yue; Man Yongzai; Zhou Pizhang
1995-01-01
A Nd: YLF laser is pumped by home-made quantum well diode lasers. Datum of laser output energy 60 μJ and peak power 120 mw are observed at wavelength 1.047 μm. On the same pumping condition, the output power synchronously pumped by two diodes is higher than the total output power pumped by two diodes separately. The fluctuation is <3%. The results agree with theoretical analysis
Strange meson spectroscopy in K[omega] and K[phi] at 11 GeV/c and Cherenkov ring imaging at SLD
Energy Technology Data Exchange (ETDEWEB)
Kwon, Youngjoon.
1993-01-01
This thesis consists of two independent parts; development of Cherenkov Ring Imaging Detector (CRID) system and analysis of high-statistics data of strange meson reactions from the LASS spectrometer. Part 1: The CRID system is devoted to charged particle identification in the SLAC Large Detector (SLD) to study e[sup +]e[sup [minus
Measurement of the B{sup +} and B{sup 0} lifetimes with topological vertexing at SLD
Energy Technology Data Exchange (ETDEWEB)
Abe, K. [Nagoya Univ. (Japan); Abe, K. [Tohoku Univ., Sendai (Japan); Abt, I. [Univ. of Illinois, Urbana, IL (United States)] [and others; SLD Collaboration
1996-07-01
The lifetimes of the B{sup +} (B{sub u}) and B{sup 0} (B{sub d}) mesons have been measured using a sample of 150,000 hadronic Z{sup 0} decays collected by the SLD experiment at the SLC between 1993 and 1995. The analysis reconstructs the decay length and charge of the B meson using a novel topological technique. This method results in a high statistics sample of 6,033 (3,665) charged (neutral) vertices. The ratio of B{sup +}:B{sup 0} decays in the charged (neutral) sample is 1.8:1 (1:2.3).
Mode locking of an external cavity asymmetric quantum-well GaAs/AlGaAs semiconductor laser
International Nuclear Information System (INIS)
Vasil'ev, Petr P; Kan, H; Ohta, H; Hiruma, T; Tanaka, K A
2006-01-01
A theoretical model of the optical gain in asymmetric GaAs/AlGaAs quantum-well lasers is developed. It is demonstrated that the emission spectrum of asymmetric GaAs/AlGaAs quantum-well lasers is much broader than that of standard quantum-well lasers. The experimental samples of such lasers and superluminescent diodes with the emission bandwidth exceeding 50 nm are fabricated. Wavelength tunable ultrashort pulses with duration of 1-2 ps at repetition rates of 0.4-1 GHz are obtained by active mode locking of an external cavity laser. (lasers)
Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang
2014-01-01
A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...
Directory of Open Access Journals (Sweden)
Karl-Uwe Reusswig
2016-10-01
Full Text Available Temporal separation of DNA replication initiation into licensing and firing phases ensures the precise duplication of the genome during each cell cycle. Cyclin-dependent kinase (CDK is known to generate this separation by activating firing factors and at the same time inhibiting licensing factors but may not be sufficient to ensure robust separation at transitions between both phases. Here, we show that a temporal gap separates the inactivation of firing factors from the re-activation of licensing factors during mitosis in budding yeast. We find that gap size critically depends on phosphorylation-dependent degradation of the firing factor Sld2 mediated by CDK, DDK, Mck1, and Cdc5 kinases and the ubiquitin-ligases Dma1/2. Stable mutants of Sld2 minimize the gap and cause increased genome instability in an origin-dependent manner when combined with deregulation of other replication regulators or checkpoint mechanisms. Robust separation of licensing and firing phases therefore appears indispensable to safeguard genome stability.
The left-right forward-backward asymmetry for B quarks at the SLD
International Nuclear Information System (INIS)
Williams, D.C.
1994-05-01
The left-right asymmetry for b quarks, A b , is precisely predicted by the Weinberg-Salam-Glashow model of particle interactions, now the standard model for high-energy particle physics. As a test of this model, A b is directly measured at the SLC Large Detector (SLD) by taking advantage of the unique polarized electron beam at the Stanford Linear Collider (SLC) and measuring the left-right forward-backward asymmetry of b quarks. To measure the asymmetry, b quarks are identified using muons of high total and transverse momenta. The result for the 1993 data sample of 37,843 hadronic Z's is A b = 0.91 ± 0.19 ± 0.06, where the first error is statistical and the second systematic. This result is in agreement with the standard model prediction of A b = 0.935
International Nuclear Information System (INIS)
Huber, J.S.
1992-01-01
A thesis in two independent halves. Part I. A search for the exclusive semileptonic decay modes D + → bar K ππ + ν e and D + → bar K * πe + ν e are presented using data from the Fermi-lab photoproduction experiment E691. With good sensitivity, the author observes no signals in the channels D + → K - π + π degrees e + ν e and D + → bar K degrees π + π - e + ν e , and set upper limits that represent only a small fraction of the inclusive semileptonic branching ration. The experiment was conducted at the Fermi-lab tagged Photon Laboratory, using a large acceptance spectrometer with silicon microvertex detector to extract a large, clean charm sample. Part II. The physics, design, and results of the Stanford Large Detector (SLD) Cherenkov Ring Imaging Detector (CRID) are described. The physics motivation and performance for the SLD CRID, the principles of Cherenkov detection, and a description of the SLD CRID are combined with a detailed description of the production and testing of the mirrors. In addition, results from the engineering run and cosmic ray tests demonstrate the current status of the system
International Nuclear Information System (INIS)
Bolen, B.D.
1996-07-01
A measurement of the electroweak asymmetry parameter A t is presented using e + E LR - → τ + τ - events from the 1993, 1994--95 data runs at the SLD experiment at SLAC. The analysis takes advantage of the polarized electron beam in the SLAC Linear Collider (SLC) to improve the precision of the analysis over the standard forward-backward asymmetry techniques
Radiation aging studies of CO2 hydrocarbon mixtures for the SLD drift chamber
International Nuclear Information System (INIS)
Venuti, J.P.; Chadwick, G.B.
1988-10-01
The SLD drift chamber requires a 'slow' drifting gas and low diffusion to allow wave form digitization. CO 2 provides this but requires an admixture of a quencher to provide more gain. A test chamber with an 8 sense wire cell, such as will appear in the final chamber, was exposed to an x-ray tube while containing a variety of binary admixtures of Co 2 : 8% isobutane, 8% ethane, and 2% isopropanol. It was determined that adding small fractions of water (≤0.66%) or isopropanol (1--2%) to the Co 2 : 8% ethane, or 8% isobutane extended the useful life of the chamber so that integrated charge collections of /approximately/1 C/cm are permissible. Results and discussions are presented. 10 refs., 7 figs., 1 tab
The left-right forward-backward asymmetry for B quarks at the SLD
Energy Technology Data Exchange (ETDEWEB)
Williams, David C. [Stanford Univ., CA (United States)
1994-05-01
The left-right asymmetry for b quarks, A{sub b}, is precisely predicted by the Weinberg-Salam-Glashow model of particle interactions, now the standard model for high-energy particle physics. As a test of this model, Ab is directly measured at the SLC Large Detector (SLD) by taking advantage of the unique polarized electron beam at the Stanford Linear Collider (SLC) and measuring the left-right forward-backward asymmetry of b quarks. To measure the asymmetry, b quarks are identified using muons of high total and transverse momenta. The result for the 1993 data sample of 37,843 hadronic Z`s is Ab = 0.91 ± 0.19 ± 0.06, where the first error is statistical and the second systematic. This result is in agreement with the standard model prediction of Ab = 0.935.
Energy Technology Data Exchange (ETDEWEB)
Kong, Long; Liu, QingXiang; Li, XiangQiang; Wang, ShaoMeng [College of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China)
2014-05-15
A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.
Directory of Open Access Journals (Sweden)
Long Kong
2014-05-01
Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.
The Pierce-diode approximation to the single-emitter plasma diode
International Nuclear Information System (INIS)
Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I.
2006-01-01
The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations must be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the (ε,η) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions
McClenahan, Charles R.; Weber, Gerald J.; Omalley, Martin W.; Stewart, Joseph; Rinehart, Larry F.; Buttram, Malcolm T.
1990-10-01
A diode employing a thermionic cathode has produced 80 A beams at 200 kV for at least 6 microseconds. Moreover, the diode operates at rates as high as 1 Hz. EGUN simulations of the experimental geometry agree with the experiments. Finally, simulation of a proposed diode geometry predicts a 1 kA, 500 kV beam.
S – C – L triple wavelength superluminescent source based on an ultra-wideband SOA and FBGs
Energy Technology Data Exchange (ETDEWEB)
Ahmad, H; Zulkifli, M Z; Hassan, N A; Muhammad, F D; Harun, S W [Photonics Research Center (Department of Physics), University of Malaya, 50603 Kuala Lumpur (Malaysia)
2013-10-31
We propose and demonstrate a wide-band semiconductor optical amplifier (SOA) based triple-wavelength superluminescent source with the output in the S-, C- and L-band regions. The proposed systems uses an ultra-wideband SOA with an amplification range from 1440 to 1620 nm as the linear gain medium. Three fibre Bragg gratings (FBGs) with centre wavelengths of 1500, 1540 and 1580 nm are used to generate the lasing wavelengths in the S-, Cand L-bands respectively, while a variable optical attenuator is used to finely balance the optical powers of the lasing wavelengths. The ultra-wideband SOA generates an amplified spontaneous emission (ASE) spectrum with a peak power of -33 dBm at the highest SOA drive current, and also demonstrates a down-shift in the centre wavelength of the generated spectrum due to the spatial distribution of the carrier densities. The S-band wavelength is the dominant wavelength at high drive currents, with an output power of -6 dBm as compared to the C- and L-bands, which only have powers of -11 and -10 dBm, respectively. All wavelengths have a high average signal-to-noise ratio more than 60 dB at the highest drive current of 390 mA, and the system also shows a high degree of stability, with power fluctuations of less than 3 dB within 70 min. The proposed system can find many applications where a wide-band and stable laser source is crucial, such as in communications and sensing. (control of laser radiation parameters)
S – C – L triple wavelength superluminescent source based on an ultra-wideband SOA and FBGs
International Nuclear Information System (INIS)
Ahmad, H; Zulkifli, M Z; Hassan, N A; Muhammad, F D; Harun, S W
2013-01-01
We propose and demonstrate a wide-band semiconductor optical amplifier (SOA) based triple-wavelength superluminescent source with the output in the S-, C- and L-band regions. The proposed systems uses an ultra-wideband SOA with an amplification range from 1440 to 1620 nm as the linear gain medium. Three fibre Bragg gratings (FBGs) with centre wavelengths of 1500, 1540 and 1580 nm are used to generate the lasing wavelengths in the S-, Cand L-bands respectively, while a variable optical attenuator is used to finely balance the optical powers of the lasing wavelengths. The ultra-wideband SOA generates an amplified spontaneous emission (ASE) spectrum with a peak power of -33 dBm at the highest SOA drive current, and also demonstrates a down-shift in the centre wavelength of the generated spectrum due to the spatial distribution of the carrier densities. The S-band wavelength is the dominant wavelength at high drive currents, with an output power of -6 dBm as compared to the C- and L-bands, which only have powers of -11 and -10 dBm, respectively. All wavelengths have a high average signal-to-noise ratio more than 60 dB at the highest drive current of 390 mA, and the system also shows a high degree of stability, with power fluctuations of less than 3 dB within 70 min. The proposed system can find many applications where a wide-band and stable laser source is crucial, such as in communications and sensing. (control of laser radiation parameters)
Laterally injected light-emitting diode and laser diode
Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.
2015-06-16
A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.
Strangeonium spectroscopy at 11 GeV/c and Cherenkov Ring Imaging at the SLD
International Nuclear Information System (INIS)
Bienz, T.L.
1990-07-01
This thesis is divided into two sections, which describe portions of the data acquisition system and online software for the Cherenkov Ring Imaging Detector (CRID) for the SLD, and analyses of several low cross section strangeonium channels in data from the LASS spectrometer. The CRID section includes a description of the data acquisition system, determination of the preamplifier gain, and development of an online pulse finding algorithm based on deconvolution. Deconvolution uses knowledge of the preamplifier impulse response to aid in pulse finding. The algorithm is fast and shows good single pulse resolution and excellent double pulse resolution in preliminary tests. The strangeonium analyses are based on data from a 4.1 event/nanobarn exposure of the LASS spectrometer in K - p interactions at 11 GeV/c, and include studies of Ληπ + π - , ΛΚ*Κ*, and Λφφ
Trestman, Grigoriy A
2017-01-01
This Tutorial Text discusses the competent design and skilled use of laser diode drivers (LDDs) and power supplies (PSs) for the electrical components of laser diode systems. It is intended to help power-electronic design engineers during the initial design stages: the choice of the best PS topology, the calculation of parameters and components of the PS circuit, and the computer simulation of the circuit. Readers who use laser diode systems for research, production, and other purposes will also benefit. The book will help readers avoid errors when creating laser systems from ready-made blocks, as well as understand the nature of the "mystical failures" of laser diodes (and possibly prevent them).
Performance of the cold powered diodes and diode leads in the main magnets of the LHC
Willering, G P; Bajko, M; Bednarek, M; Bottura, L; Charifoulline, Z; Dahlerup-Petersen, K; Dib, G; D'Angelo, G; Gharib, A; Grand-Clement, L; Izquierdo Bermudez, S; Prin, H; Roger, V; Rowan, S; Savary, F; Tock, J-Ph; Verweij, A
2015-01-01
During quench tests in 2011 variations in resistance of an order of magnitude were found in the diode by-pass circuit of the main LHC magnets. An investigation campaign was started to understand the source, the occurrence and the impact of the high resistances. Many tests were performed offline in the SM18 test facility with a focus on the contact resistance of the diode to heat sink contact and the diode wafer temperature. In 2014 the performance of the diodes and diode leads of the main dipole bypass systems in the LHC was assessed during a high current qualification test. In the test a current cycle similar to a magnet circuit discharge from 11 kA with a time constant of 100 s was performed. Resistances of up to 600 μΩ have been found in the diode leads at intermediate current, but in general the high resistances decrease at higher current levels and no sign of overheating of diodes has been seen and the bypass circuit passed the test. In this report the performance of the diodes and in particular the co...
Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm
International Nuclear Information System (INIS)
Andreeva, E V; Il'chenko, S N; Lobintsov, A A; Shramenko, M V; Ladugin, M A; Marmalyuk, A A; Yakubovich, S D
2013-01-01
A line of travelling-wave semiconductor optical amplifiers (SOAs) based on heterostructures used for production of broadband superluminescent diodes is developed. The pure small-signal gains of the developed SOA modules are about 25 dB, while the gain bandwidths at a level of –10 dB reach 50 – 100 nm. As a whole, the SOA modules cover the IR spectral range from 750 to 1100 nm. The SOAs demonstrate a high reliability at a single-mode fibre-coupled cw output power up to 50 mW. Examples of application of two of the developed SOA modules as active elements of broadband fast-tunable lasers are presented. (lasers)
Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm
Energy Technology Data Exchange (ETDEWEB)
Andreeva, E V; Il' chenko, S N; Lobintsov, A A; Shramenko, M V [Superlum Diodes Ltd., Moscow (Russian Federation); Ladugin, M A [' Sigm Plyus' Ltd, Moscow (Russian Federation); Marmalyuk, A A [Open Joint-Stock Company M.F. Stel' makh Polyus Research Institute, Moscow (Russian Federation); Yakubovich, S D [Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)
2013-11-30
A line of travelling-wave semiconductor optical amplifiers (SOAs) based on heterostructures used for production of broadband superluminescent diodes is developed. The pure small-signal gains of the developed SOA modules are about 25 dB, while the gain bandwidths at a level of –10 dB reach 50 – 100 nm. As a whole, the SOA modules cover the IR spectral range from 750 to 1100 nm. The SOAs demonstrate a high reliability at a single-mode fibre-coupled cw output power up to 50 mW. Examples of application of two of the developed SOA modules as active elements of broadband fast-tunable lasers are presented. (lasers)
Graphene geometric diodes for terahertz rectennas
International Nuclear Information System (INIS)
Zhu Zixu; Joshi, Saumil; Grover, Sachit; Moddel, Garret
2013-01-01
We demonstrate a new thin-film graphene diode called a geometric diode that relies on geometric asymmetry to provide rectification at 28 THz. The geometric diode is coupled to an optical antenna to form a rectenna that rectifies incoming radiation. This is the first reported graphene-based antenna-coupled diode working at 28 THz, and potentially at optical frequencies. The planar structure of the geometric diode provides a low RC time constant, on the order of 10 −15 s, required for operation at optical frequencies, and a low impedance for efficient power transfer from the antenna. Fabricated geometric diodes show asymmetric current–voltage characteristics consistent with Monte Carlo simulations for the devices. Rectennas employing the geometric diode coupled to metal and graphene antennas rectify 10.6 µm radiation, corresponding to an operating frequency of 28 THz. The graphene bowtie antenna is the first demonstrated functional antenna made using graphene. Its response indicates that graphene is a suitable terahertz resonator material. Applications for this terahertz diode include terahertz-wave and optical detection, ultra-high-speed electronics and optical power conversion. (paper)
Tunable diode-pumped-LNA laser
International Nuclear Information System (INIS)
Cassimi, A.; Hardy, V.; Hamel, J.; Leduc, M.
1987-01-01
Diode-pumped crystals provided recently new compact laser devices. We report the first end pumping of a La x Nd 1-x MgAl 11 O 19 (LNA) crystal using a 200mW diode array (Spectra Diode Lab). We also report the first results obtained with a 1mW diode (SONY). This C.W. laser can be tuned from 1.048μm to 1.086μm. Without selective elements in the cavity, the laser emits around 1.054μm with a threshold of 24mW and a slope efficiency of 4.4% (output mirror of transmission T = 1%) when pumped by the diode array. With the selective elements, the threshold increases to 100mW and we obtain a power of 4mW for a pump power of 200mW
Laser-diode pumped Nd:YAG lasers; Laser diode reiki Nd:YAG lasear
Energy Technology Data Exchange (ETDEWEB)
Yuasa, H.; Akiyama, Y.; Nakayama, M. [Toshiba Corp., Tokyo (Japan)
2000-04-01
Laser-diode pumped Nd:YAG lasers are expected to be applied to laser processing fields such as welding, cutting, drilling, and marking due to their potential for high efficiency and compactness. We are designing and developing laser-diode pumped Nd:YAG lasers using numerical analysis simulation techniques such as ray tracing and thermal analysis. We have succeeded in achieving a laser power of more than 3 kW with 20% efficiency, which is the best ever obtained. In addition, we have developed a laser-diode pumped green laser by second harmonic generation, for precision machining on silicon wafers. (author)
Magnetically insulated H- diodes
International Nuclear Information System (INIS)
Fisher, A.; Bystritskii, V.; Garate, E.; Prohaska, R.; Rostoker, N.
1993-01-01
At the Univ. of California, Irvine, the authors have been studying the production of intense H - beams using pulse power techniques for the past 7 years. Previously, current densities of H - ions for various diode designs at UCI have been a few A/cm 2 . Recently, they have developed diodes similar to the coaxial design of the Lebedev Physical Institute, Moscow, USSR, where current densities of up to 200 A/cm 2 were reported using nuclear activation of a carbon target. In experiments at UCI employing the coaxial diode, current densities of up to 35 A/cm 2 from a passive polyethylene cathode loaded with TiH 2 have been measured using a pinhole camera and CR-39 track recording plastic. The authors have also been working on a self-insulating, annular diode which can generate a directed beam of H - ions. In the annular diode experiments a plasma opening switch was used to provide a prepulse and a current path which self-insulated the diode. These experiments were done on the machine APEX, a 1 MV, 50 ns, 7 Ω pulseline with a unipolar negative prepulse of ∼ 100 kV and 400 ns duration. Currently, the authors are modifying the pulseline to include an external LC circuit which can generate a bipolar, 150 kV, 1 μs duration prepulse (similar prepulse characteristic as in the Lebedev Institute experiments cited above)
Houck, Edward D.
1994-01-01
A fluid transfer system that combines a vortex diode with a jet ejector to transfer liquid from one tank to a second tank by a gas pressurization method having no moving mechanical parts in the fluid system. The vortex diode is a device that has a high resistance to flow in one direction and a low resistance to flow in the other.
Laser Diode Beam Basics, Manipulations and Characterizations
Sun, Haiyin
2012-01-01
Many optical design technical books are available for many years which mainly deal with image optics design based on geometric optics and using sequential raytracing technique. Some books slightly touched laser beam manipulation optics design. On the other hand many books on laser diodes have been published that extensively deal with laser diode physics with little touching on laser diode beam manipulations and characterizations. There are some internet resources dealing with laser diode beams. However, these internet resources have not covered enough materials with enough details on laser diode beam manipulations and characterizations. A technical book concentrated on laser diode beam manipulations and characterizations can fit in to the open and provide useful information to laser diode users. Laser Diode Beam Basics, Manipulations and Characterizations is concentrated on the very practical side of the subject, it only discusses the basic physics and mathematics that are necessary for the readers in order...
Operation and maintenance manual for diode performance analysis program DIODE0
International Nuclear Information System (INIS)
Boyer, W.B.
1977-03-01
This program computes diode performance parameters for the e beam fusion accelerators HYDRA, PROTO I and PROTO II. The program works in conjunction with other programs in the data acquisition facility library. It reads the input data produced by the Tekronix R7012 Transient Digitizers off the disc. It then computes and plots the diode corrected voltages, impedances, powers, and energies
Laser diode package with enhanced cooling
Deri, Robert J [Pleasanton, CA; Kotovsky, Jack [Oakland, CA; Spadaccini, Christopher M [Oakland, CA
2011-09-13
A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.
High power diode pumped solid state lasers
International Nuclear Information System (INIS)
Solarz, R.; Albrecht, G.; Beach, R.; Comaskey, B.
1992-01-01
Although operational for over twenty years, diode pumped solid state lasers have, for most of their existence, been limited to individual diodes pumping a tiny volume of active medium in an end pumped configuration. More recent years have witnessed the appearance of diode bars, packing around 100 diodes in a 1 cm bar which have enabled end and side pumped small solid state lasers at the few Watt level of output. This paper describes the subsequent development of how proper cooling and stacking of bars enables the fabrication of multi kill average power diode pump arrays with irradiances of 1 kw/cm peak and 250 W/cm 2 average pump power. Since typical conversion efficiencies from the diode light to the pumped laser output light are of order 30% or more, kW average power diode pumped solid state lasers now are possible
Powerful infrared emitting diodes
Directory of Open Access Journals (Sweden)
Kogan L. M.
2012-02-01
Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.
Manufacture of axially insulated large-area diodes
International Nuclear Information System (INIS)
Ma Weiyi; Zhou Kungang; Wang Youtian; Zhang Dong; Shan Yusheng; Wang Naiyan
1999-01-01
The author describes the design and construction of the axially insulated large-area diodes used in the 'Heaven-1'. The four axially insulated large-area diodes are connected to the 10 ohm pulse transmission lines via the vacuum feed through tubes. The experimental results with the diodes are given. The diodes can steadily work at the voltage of 650 kV, and the diode current density is about 80 A per cm 2 with a pulse width of 220 ns. The electron beams with a total energy of 25 kJ are obtained
Enhanced vbasis laser diode package
Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack
2014-08-19
A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.
Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit
Cappuccio, Joseph C., Jr.
1988-01-01
Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...
Diode lasers: From laboratory to industry
Nasim, Hira; Jamil, Yasir
2014-03-01
The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.
Studies of cold protection diodes
International Nuclear Information System (INIS)
Carcagno, R.; Zeigler, J.
1990-01-01
The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current IV measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 14 refs., 8 figs., 2 tabs
Studies of cold protection diodes
International Nuclear Information System (INIS)
Carcagno, R.; Zeigler, J.
1990-03-01
The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current 4 measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 11 refs., 8 figs., 2 tabs
Optical polymers for laser medical applications
Sultanova, Nina G.; Kasarova, Stefka N.; Nikolov, Ivan D.
2016-01-01
In medicine, optical polymers are used not only in ophthalmology but in many laser surgical, diagnostic and therapeutic systems. The application in lens design is determined by their refractive and dispersive properties in the considered spectral region. We have used different measuring techniques to obtain precise refractometric data in the visible and near-infrared spectral regions. Dispersive, thermal and other important optical characteristics of polymers have been studied. Design of a plastic achromatic objective, used in a surgical stereo-microscope at 1064 nm laser wavelength, is accomplished. Geometrical and wavefront aberrations are calculated. Another example of application of polymers is the designed all-mirror apochromatic micro-lens, intended for superluminescent diode fiber coupling in medical systems.
Spin-current diode with a ferromagnetic semiconductor
International Nuclear Information System (INIS)
Sun, Qing-Feng; Xie, X. C.
2015-01-01
Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here, we propose a corresponding device in spintronics: the spin-current diode, in which the forward spin current is large but the reversed one is negligible. We show that the lead/ferromagnetic quantum dot/lead system and the lead/ferromagnetic semiconductor/lead junction can work as spin-current diodes. The spin-current diode, a low dissipation device, may have important applications in spintronics, as the conventional charge-current diode does in electronics
Diode, transistor & fet circuits manual
Marston, R M
2013-01-01
Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration
GINS complex protein Sld5 recruits SIK1 to activate MCM helicase during DNA replication.
Joshi, Kiranmai; Shah, Varun Jayeshkumar; Maddika, Subbareddy
2016-12-01
In eukaryotes, proper loading and activation of MCM helicase at chromosomal origins plays a central role in DNA replication. Activation of MCM helicase requires its association with CDC45-GINS complex, but the mechanism of how this complex activates MCM helicase is poorly understood. Here we identified SIK1 (salt-inducible kinase 1), an AMPK related protein kinase, as a molecular link that connects GINS complex with MCM helicase activity. We demonstrated that Sld5 a component of GINS complex interacts with SIK1 and recruits it to the sites of DNA replication at the onset of S phase. Depletion of SIK1 leads to defective DNA replication. Further, we showed that SIK1 phosphorylates MCM2 at five conserved residues at its N-terminus, which is essential for the activation of MCM helicase. Collectively, our results suggest SIK1 as a novel integral component of CMG replicative helicase during eukaryotic DNA replication. Copyright © 2016 Elsevier Inc. All rights reserved.
Focusing experiments with light ion diodes
International Nuclear Information System (INIS)
Johnson, D.L.
1978-01-01
A review of recent experimental and theoretical work at Sandia Laboratories on magnetically insulated single stage ion diodes for inertial confinement fusion experiments is presented. The production, focusing, and numerical simulation of a 0.5 TW annular proton beam using the Proto I dual transmission line generator is described. The modular magnetically insulated ion diode for the Hydra generator is also described along with recent experimental results. A brief description of how an array of modular diodes similar to the Hydra magnetically insulated diode could be used on the EBFA I generator for breakeven fusion experiments is presented
Quaternary InGaAsSb Thermophotovoltaic Diodes
International Nuclear Information System (INIS)
MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi
2006-01-01
In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E G = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of η TPV = 19.7% and PD =0.58 W/cm 2 respectively for a radiator temperature of T radiator = 950 C, diode temperature of T diode = 27 C, and diode bandgap of E G = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is η TPV = 28% and PD = 0.85W/cm 2 at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V OC is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V OC and thus efficiency is limited by extrinsic recombination processes such as through bulk defects
Schulte, B A; Steel, K P
1994-07-01
Mice homozygous for mutations at the viable dominant spotting (Wv) and Steel-dickie (Sld) loci exhibit a similar phenotype which includes deafness. The auditory dysfunction derives from failure of the stria vascularis to develop normally and to generate a high positive endocochlear potential (EP). Because strial function is driven by Na,K-ATPase its expression was investigated in inner ears of Wv/Wv and Sld/Sld mice and their wild-type littermates by immunostaining with antisera against four of the enzyme's subunit isoforms. Wild-type mice from two different genetic backgrounds showed an identical distribution of subunit isoforms among inner ear transport cells. Several epithelial cell types coexpressed the alpha 1 and beta 1 subunits. Vestibular dark cells showed no reactivity for beta 1 but expressed abundant beta 2, whereas, strial marginal cells stained strongly for both beta isoforms. The only qualitative difference between mutant and wild-type mice was the absence of beta 1 subunit in marginal cells of the mutant's stria. However, it is unlikely that this difference accounts for failure of mutants to generate a high EP because the beta 1 subunit is not present in the stria vascularis of either rats or gerbils with normal EP values. Strong immunostaining for Na,K-ATPase in lateral wall fibrocytes of normal mice along with diminished immunoreactivity in the mutants supports the concept that these strategically located transport fibrocytes actively resorb K+ leaked across Reissner's membrane into scala vestibuli or effluxed from hair cells and nerves into scala tympani. It is further speculated that the resorbed K+ normally is siphoned down its concentration gradient into the intrastrial space through gap junctions between fibrocytes and strial basal and intermediate cells where it is recycled back to endolymph via marginal cells. Thus, failure of mutants to generate a positive EP could be explained by the absence of intermediate cells which may form the final
Atomic spectroscopy with diode lasers
International Nuclear Information System (INIS)
Tino, G.M.
1994-01-01
Some applications of semiconductor diode lasers in atomic spectroscopy are discussed by describing different experiments performed with lasers emitting in the visible and in the near-infrared region. I illustrate the results obtained in the investigation of near-infrared transitions of atomic oxygen and of the visible intercombination line of strontium. I also describe how two offset-frequency-locked diode lasers can be used to excite velocity selective Raman transitions in Cs. I discuss the spectral resolution, the accuracy of frequency measurements, and the detection sensitivity achievable with diode lasers. (orig.)
Thermometric characteristics of silicon semiconductor diodes
International Nuclear Information System (INIS)
Bezverkhnyaya, N.S.; Vasil'ev, L.M.; Dmitrevskij, Yu.P.; Mel'nik, Yu.M.
1975-01-01
To substantiate the feasibility of using silicon diodes made by the Soviet industry as detectors of temperature in the 15 - 300 K range, 25 different types of silicon diodes have been investigated. The results obtained for the thermometric characteristics of the diodes are presented in tabular form. It is shown that a stability of readings of up to 0.05 deg can be obtained [ru
Respiratory complications after diode-laser-assisted tonsillotomy.
Fischer, Miloš; Horn, Iris-Susanne; Quante, Mirja; Merkenschlager, Andreas; Schnoor, Jörg; Kaisers, Udo X; Dietz, Andreas; Kluba, Karsten
2014-08-01
Children with certain risk factors, such as comorbidities or severe obstructive sleep apnea syndrome (OSAS) are known to require extended postoperative monitoring after adenotonsillectomy. However, there are no recommendations available for diode-laser-assisted tonsillotomy. A retrospective chart review of 96 children who underwent diode-laser-assisted tonsillotomy (07/2011-06/2013) was performed. Data for general and sleep apnea history, power of the applied diode-laser (λ = 940 nm), anesthesia parameters, the presence of postoperative respiratory complications and postoperative healing were evaluated. After initially uncomplicated diode-laser-assisted tonsillotomy, an adjustment of post-anesthesia care was necessary in 16 of 96 patients due to respiratory failure. Respiratory complications were more frequent in younger children (3.1 vs. 4.0 years, p = 0.049, 95 % CI -1.7952 to -0.0048) and in children who suffered from nocturnal apneas (OR = 5.00, p diode-laser power higher than 13 W could be identified as a risk factor for the occurrence of a postoperative oropharyngeal edema (OR = 3.45, p diode-laser-assisted tonsillotomy. We recommend a reduced diode-laser power (<13 W) to reduce oropharyngeal edema.
Laser diode technology for coherent communications
Channin, D. J.; Palfrey, S. L.; Toda, M.
1989-01-01
The effect of diode laser characteristics on the overall performance capabilities of coherent communication systems is discussed. In particular, attention is given to optical performance issues for diode lasers in coherent systems, measurements of key performance parameters, and optical requirements for coherent single-channel and multichannel communication systems. The discussion also covers limitations imposed by diode laser optical performance on multichannel system capabilities and implications for future developments.
Plasma filled diodes and application to a PEOS
International Nuclear Information System (INIS)
Grossmann, J.M.; Ottinger, P.F.; Drobot, A.T.; Seftor, L.
1985-01-01
Pinched beam diodes generally begin operation at large impedances until the diode has had time to turn on (at which point strong electric fields turn on electric emission at the cathode). Current turn-on is accompanied by a sharp drop in impedance and is accomplished initially through space charge limited flow. As the current increases, the diode impedance will be determined by critical current flow when the electron beam pinches. Eventually the diode shorts out by gap closure as the high density electrode plasmas expand cross the AK gap. After turn-on, then, the diode acts as a low impedance load which is favorable for coupling to a PEOS by allowing for strong insulation of the electron flow from the PEOS to the load. It would be advantageous when using a PEOS to have the impedance of the diode low even at early times. This can be accomplished by introducing a low density plasma in the region between the cathode and the anode. The plasma initially presents the PEOS with a low impedance current path at the load as the switch opens - thereby reducing current losses upstream of the load. As the switch opens, the impedance of the diode can increase as the diode plasma erodes away, and the diode gap opens
Recent advancements in spectroscopy using tunable diode lasers
International Nuclear Information System (INIS)
Nasim, Hira; Jamil, Yasir
2013-01-01
Spectroscopy using tunable diode lasers is an area of research that has gone through a dramatic evolution over the last few years, principally because of new exciting approaches in the field of atomic and molecular spectroscopy. This article attempts to review major recent advancements in the field of diode laser based spectroscopy. The discussion covers the developments made so far in the field of diode lasers and illustrates comprehensively the properties of free-running diode lasers. Since the commercially available free-running diode lasers are not suitable for high-precision spectroscopic studies, various techniques developed so far for converting these free-running diode lasers into true narrow linewidth tunable laser sources are discussed comprehensively herein. The potential uses of diode lasers in different spectroscopic fields and their extensive list of applications have also been included, which may be interesting for the novice and the advanced user as well. (topical review)
Quasi-CW Laser Diode Bar Life Tests
Stephen, Mark A.; Krainak, Michael A.; Dallas, Joseph L.
1997-01-01
NASA's Goddard Space Flight Center is developing technology for satellite-based, high peak power, LIDAR transmitters requiring 3-5 years of reliable operation. Semi-conductor laser diodes provide high efficiency pumping of solid state lasers with the promise of long-lived, reliable operation. 100-watt quasi- CW laser diode bars have been baselined for the next generation laser altimeters. Multi-billion shot lifetimes are required. The authors have monitored the performance of several diodes for billions of shots and investigated operational modes for improving diode lifetime.
Carbon nanotube Schottky diode: an atomic perspective
International Nuclear Information System (INIS)
Bai, P; Li, E; Kurniawan, O; Koh, W S; Lam, K T
2008-01-01
The electron transport properties of semiconducting carbon nanotube (SCNT) Schottky diodes are investigated with atomic models using density functional theory and the non-equilibrium Green's function method. We model the SCNT Schottky diode as a SCNT embedded in the metal electrode, which resembles the experimental set-up. Our study reveals that the rectification behaviour of the diode is mainly due to the asymmetric electron transmission function distribution in the conduction and valence bands and can be improved by changing metal-SCNT contact geometries. The threshold voltage of the diode depends on the electron Schottky barrier height which can be tuned by altering the diameter of the SCNT. Contrary to the traditional perception, the metal-SCNT contact region exhibits better conductivity than the other parts of the diode
Electromagnetic wave analogue of electronic diode
Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.
2010-01-01
An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...
A practical guide to handling laser diode beams
Sun, Haiyin
2015-01-01
This book offers the reader a practical guide to the control and characterization of laser diode beams. Laser diodes are the most widely used lasers, accounting for 50% of the global laser market. Correct handling of laser diode beams is the key to the successful use of laser diodes, and this requires an in-depth understanding of their unique properties. Following a short introduction to the working principles of laser diodes, the book describes the basics of laser diode beams and beam propagation, including Zemax modeling of a Gaussian beam propagating through a lens. The core of the book is concerned with laser diode beam manipulations: collimating and focusing, circularization and astigmatism correction, coupling into a single mode optical fiber, diffractive optics and beam shaping, and manipulation of multi transverse mode beams. The final chapter of the book covers beam characterization methods, describing the measurement of spatial and spectral properties, including wavelength and linewidth meas...
International Nuclear Information System (INIS)
Rix, W.H.; Shannon, J.P.
1991-01-01
This patent describes a diode for generating X-rays and adapted for connection to a source of high electrical energy having a source of high energy electrons and a ground, the diode having a first end from which the X-rays are emitted, a second end and an axis extending between the ends. It comprises: a ring cathode connected to the electron source; an intermediate anode spaced from the ring cathode and with at least a portion of the intermediate anode being disposed between the ring cathode and the diode first end, the intermediate anode hiving means for decelerating electrons to cause the generation of X-rays emitted from the first end; an intermediate cathode disposed radially outwardly of the intermediate anode and connected thereto; and an inverse anode spaced from the intermediate cathode, the inverse and anode being disposed radially outwardly of the intermediate cathode and the inverse anode being positioned between the intermediate cathode and the diode second end
Diode laser based light sources for biomedical applications
DEFF Research Database (Denmark)
Müller, André; Marschall, Sebastian; Jensen, Ole Bjarlin
2013-01-01
Diode lasers are by far the most efficient lasers currently available. With the ever-continuing improvement in diode laser technology, this type of laser has become increasingly attractive for a wide range of biomedical applications. Compared to the characteristics of competing laser systems, diode...... imaging. This review provides an overview of the latest development of diode laser technology and systems and their use within selected biomedical applications....
Diode-Assisted Buck-Boost Voltage-Source Inverters
DEFF Research Database (Denmark)
Gao, Feng; Loh, Poh Chiang; Teodorescu, Remus
2009-01-01
, a number of diode-assisted inverter variants can be designed with each having its own operational principle and voltage gain expression. For controlling them, a generic modulation scheme that can be used for controlling all diode-assisted variants with minimized harmonic distortion and component stress......This paper proposes a number of diode-assisted buck-boost voltage-source inverters with a unique X-shaped diode-capacitor network inserted between the inverter circuitry and dc source for producing a voltage gain that is comparatively higher than those of other buck-boost conversion techniques....... Using the diode-assisted network, the proposed inverters can naturally configure themselves to perform capacitive charging in parallel and discharging in series to give a higher voltage multiplication factor without compromising waveform quality. In addition, by adopting different front-end circuitries...
Ion current reduction in pinched electron beam diodes
International Nuclear Information System (INIS)
Quintenz, J.P.; Poukey, J.W.
1977-01-01
A new version of a particle-in-cell diode code has been written which permits the accurate treatment of higher-current diodes with greater physical dimensions. Using this code, we have studied ways to reduce the ion current in large-aspect-ratio pinched electron beam diodes. In particular, we find that allowing the ions to reflex in such diodes lowers the ion to electron current ratio considerably. In a 3-MV R/d=24 case this ratio was lowered by a factor of 6--8 compared with the corresponding nonreflexing-ion diode, while still producing a superpinched electron beam
Arbitrary waveform generator to improve laser diode driver performance
Fulkerson, Jr, Edward Steven
2015-11-03
An arbitrary waveform generator modifies the input signal to a laser diode driver circuit in order to reduce the overshoot/undershoot and provide a "flat-top" signal to the laser diode driver circuit. The input signal is modified based on the original received signal and the feedback from the laser diode by measuring the actual current flowing in the laser diode after the original signal is applied to the laser diode.
Trap-induced photoconductivity in singlet fission pentacene diodes
Energy Technology Data Exchange (ETDEWEB)
Qiao, Xianfeng, E-mail: qiaoxianfeng@hotmail.com; Zhao, Chen; Chen, Bingbing; Luan, Lin [WuHan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wu Han 430074 (China)
2014-07-21
This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.
GA-DoSLD: Genetic Algorithm Based Denial-of-Sleep Attack Detection in WSN
Directory of Open Access Journals (Sweden)
Mahalakshmi Gunasekaran
2017-01-01
Full Text Available Denial-of-sleep (DoSL attack is a special category of denial-of-service attack that prevents the battery powered sensor nodes from going into the sleep mode, thus affecting the network performance. The existing schemes used for the DoSL attack detection do not provide an optimal energy conservation and key pairing operation. Hence, in this paper, an efficient Genetic Algorithm (GA based denial-of-sleep attack detection (GA-DoSLD algorithm is suggested for analyzing the misbehaviors of the nodes. The suggested algorithm implements a Modified-RSA (MRSA algorithm in the base station (BS for generating and distributing the key pair among the sensor nodes. Before sending/receiving the packets, the sensor nodes determine the optimal route using Ad Hoc On-Demand Distance Vector Routing (AODV protocol and then ensure the trustworthiness of the relay node using the fitness calculation. The crossover and mutation operations detect and analyze the methods that the attackers use for implementing the attack. On determining an attacker node, the BS broadcasts the blocked information to all the other sensor nodes in the network. Simulation results prove that the suggested algorithm is optimal compared to the existing algorithms such as X-MAC, ZKP, and TE2P schemes.
Handheld White Light Interferometer for Measuring Defect Depth in Windows
Youngquist, Robert; Simmons, Stephen; Cox, Robert
2010-01-01
Accurate quantification of defects (scratches and impacts) is vital to the certification of flight hardware and other critical components. The amount of damage to a particular component contributes to the performance, reliability, and safety of a system, which ultimately affects the success or failure of a mission or test. The launch-commit criteria on a Space Shuttle Orbiter window are governed by the depth of the defects that are identified by a visual inspection. This measurement of a defect is not easy to obtain given the environment, size of the defect, and location of the window(s). The determination of depth has typically been performed by taking a mold impression and measuring the impression with an optical profiling instrument. Another method of obtaining an estimate of the depth is by using a refocus microscope. To use a refocus microscope, the surface of the glass and bottom of the defect are, in turn, brought into focus by the operator. The amount of movement between the two points corresponds to the depth of the defect. The refocus microscope requires a skilled operator and has been proven to be unreliable when used on Orbiter windows. White light interferometry was chosen as a candidate to replace the refocus microscope. The White Light Interferometer (WLI) was developed to replace the refocus microscope as the instrument used for measuring the depth of defects in Orbiter windows. The WLI consists of a broadband illumination source, interferometer, detector, motion control, displacement sensor, mechanical housing, and support electronics. The illumination source for the WLI is typically a visible light emitting diode (LED) or a near-infrared superluminescent diode (SLD) with power levels of less than a milliwatt. The interferometer is a Michelson configuration consisting of a 1-in. (2.5-cm) cube beam splitter, a 0.5-in. (1.3-cm) optical window as a movable leg (used to closely match the return intensity of the fixed leg from the window), and a
Silicon monolithic microchannel-cooled laser diode array
International Nuclear Information System (INIS)
Skidmore, J. A.; Freitas, B. L.; Crawford, J.; Satariano, J.; Utterback, E.; DiMercurio, L.; Cutter, K.; Sutton, S.
2000-01-01
A monolithic microchannel-cooled laser diode array is demonstrated that allows multiple diode-bar mounting with negligible thermal cross talk. The heat sink comprises two main components: a wet-etched Si layer that is anodically bonded to a machined glass block. The continuous wave (cw) thermal resistance of the 10 bar diode array is 0.032 degree sign C/W, which matches the performance of discrete microchannel-cooled arrays. Up to 1.5 kW/cm 2 is achieved cw at an emission wavelength of ∼808 nm. Collimation of a diode array using a monolithic lens frame produced a 7.5 mrad divergence angle by a single active alignment. This diode array offers high average power/brightness in a simple, rugged, scalable architecture that is suitable for large two-dimensional areas. (c) 2000 American Institute of Physics
The Beam Characteristics of High Power Diode Laser Stack
Gu, Yuanyuan; Fu, Yueming; Lu, Hui; Cui, Yan
2018-03-01
Direct diode lasers have some of the most attractive features of any laser. They are very efficient, compact, wavelength versatile, low cost, and highly reliable. However, the full utilization of direct diode lasers has yet to be realized. However, the poor quality of diode laser beam itself, directly affect its application ranges, in order to better use of diode laser stack, need a proper correction of optical system, which requires accurate understanding of the diode laser beam characteristics. Diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. Therefore diode laser cladding will open a new field of repairing for the damaged machinery parts which must contribute to recycling of the used machines and saving of cost.
Progress in semiconductor laser diodes: SPIE volume 723
International Nuclear Information System (INIS)
Eichen, E.
1987-01-01
This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes
Radiation effects in semiconductor laser diode arrays
International Nuclear Information System (INIS)
Carson, R.F.
1988-01-01
The effects of radiation events are important for many of the present and future applications that involve optoelectronic components. Laser diodes show a strong resistance to degradation by gamma rays, prompt x-rays and (to a lesser extent), neutrons. This is due to the short carrier lifetime that is associated with stimulated emission and the high current injection conditions that are present in these devices. Radiation-resistant properties should carry over to many of the more recently developed devices such as multi-stripe array and broad area laser diodes. There are, however, additional considerations for radiation tolerance that are introduced by these devices. Arrays and other high power laser diodes have larger active region volumes than lower power single stripe devices. In addition, evanescent field coupling between stripes, the material quality available from newer MOCVD epitaxial growth techniques, and stripe definition methods may all influence the radiation tolerance of the high power laser diode devices. Radiation tests have been conducted on various GaAs-GaAlAs laser diode array and broad area devices. Tests involving total gamma dose have indicated that high power laser diodes and arrays have small degradations in light power output with current input after 4 MRad(Si) of radiation from a Co 60 source. Additional test results involving flash x-rays indicate that high power diode lasers and arrays are tolerant to 10 12 rads(Si)/sec, when observed on microsecond or millisecond time scales. High power diode laser devices were also irradiated with neutrons to a fluence of 10 14 neutrons/cm 2 with some degradation of threshold current level
Microclump effects in magnetically-immersed electron diodes
International Nuclear Information System (INIS)
Olson, C.L.
1998-01-01
Magnetically-immersed electron diodes are being developed to produce needle-like, high-current, electron beams for radiography applications. An immersed diode consists of a needle cathode and a planar anode/bremmstrahlung converter which are both immersed in a strong solenoidal magnetic field (12--50 T); nominal parameters are 10 MV, 40 kA, 0.5 mm radius cathode, and 5--35 cm anode-cathode gaps. A physical picture of normal and abnormal diode behavior is emerging. Normal diode behavior occurs for times 0 ≤ t ≤ τ, where the transition time τ is typically 30 ns; during this time, bipolar space-charge limited flow occurs, which scales well to desired radiography parameters of high dose and small spot size. Abnormal diode behavior occurs for t ≥ τ, which results in substantial increases in spot size and current (impedance reduction). This abnormal behavior appears to be caused by an increase in ion charge in the gap, which may result from poor vacuum, impurity ions undergoing ion-ion stripping collisions during transit, or microclumps undergoing stripping collisions during transit. The potential effects of microclumps on diode behavior are reported here
Electron injection in diodes with field emission
International Nuclear Information System (INIS)
Denavit, J.; Strobel, G.L.
1986-01-01
This paper presents self-consistent steady-state solutions of the space charge, transmitted current, and return currents in diodes with electron injection from the cathode and unlimited field emission of electrons and ions from both electrodes. Time-dependent particle simulations of the diode operation confirm the analytical results and show how these steady states are reached. The results are applicable to thermionic diodes and to photodiodes
Cold cathode diode X-ray source
International Nuclear Information System (INIS)
Cooperstein, G.; Lanza, R.C.; Sohval, A.R.
1983-01-01
A cold cathode diode X-ray source for radiation imaging, especially computed tomography, comprises a rod-like anode and a generally cylindrical cathode, concentric with the anode. The spacing between anode and cathode is so chosen that the diode has an impedance in excess of 100 ohms. The anode may be of tungsten, or of carbon with a tungsten and carbon coating. An array of such diodes may be used with a closely packed array of detectors to produce images of rapidly moving body organs, such as the beating heart. (author)
A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.
A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.
Electromagnetic wave analogue of an electronic diode
International Nuclear Information System (INIS)
Shadrivov, Ilya V; Powell, David A; Kivshar, Yuri S; Fedotov, Vassili A; Zheludev, Nikolay I
2011-01-01
An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of rotation of the polarization state and is also a key component in optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by an extraordinarily strong nonlinear wave propagation effect in the same way as the electronic diode function is provided by the nonlinear current characteristic of a semiconductor junction. The effect exploited in this new electromagnetic diode is an intensity-dependent polarization change in an artificial chiral metamolecule. This microwave effect exceeds a similar optical effect previously observed in natural crystals by more than 12 orders of magnitude and a direction-dependent transmission that differs by a factor of 65.
High-temperature current conduction through three kinds of Schottky diodes
International Nuclear Information System (INIS)
Fei, Li; Xiao-Ling, Zhang; Yi, Duan; Xue-Song, Xie; Chang-Zhi, Lü
2009-01-01
Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I–V–T measurements ranging from 300 to 523 K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
International Nuclear Information System (INIS)
Skagerlund, L.E.
1975-01-01
A diode laser is pumped or pulsed by a repeated capacitive discharge. A capacitor is periodically charged from a dc voltage source via a transformer, the capacitor being discharged through the diode laser via a controlled switching means after one or more charging periods. During a first interval of each charging period the transformer, while unloaded, stores a specific amount of energy supplied from the dc voltage source. During a subsequent interval of the charging period said specific amount of energy is transmitted from the transformer to the capacitor. The discharging of the capacitor takes place during a first interval of a charging period. (auth)
Plasma-filled diode based on the coaxial gun
Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N.
2012-10-01
The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.
Plasma-filled diode based on the coaxial gun.
Zherlitsyn, A A; Kovalchuk, B M; Pedin, N N
2012-10-01
The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.
Plasma-filled diode based on the coaxial gun
International Nuclear Information System (INIS)
Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N.
2012-01-01
The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.
Roy, Dibyendu
2010-01-01
We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...
Developments in lead-salt diode lasers
International Nuclear Information System (INIS)
Partin, D.L.
1985-01-01
Lead-chalcogenide diode lasers are useful as mid-infrared sources (2-1/2 <λ<30 μm), but have generally operated CW below 100K. A new materials system, PbEuSeTe, has been used to fabricate diode lasers operating from 10K (at 6.5 μm wavelength) up to 174K CW (at 4.4 μm) and up to 280K pulsed (at 3.8 μm). These are large optical cavity single quantum well devices grown by molecular beam epitaxy. These are currently the highest diode laser operating temperatures ever achieved at these wavelengths to our knowledge. Single ended output powers as high as 1 mW single mode (5 mW multimode) have been attained from mesa stripe diodes. These characteristics make these devices attractive for long wavelength fiber optic sensor/communications systems. The performance limits of these devices are discussed
Use of epitaxial silicon diodes in photon dosimetry
International Nuclear Information System (INIS)
Pereira, Lilian Nunes
2013-01-01
In this work we report on results obtained with two rad-hard epitaxial (EPI) silicon diodes as on-line dosimeter for diagnostic radiology, mammography and computed tomography, in the 28 kV to 150 kV range. The epitaxial diodes used were processed at University of Hamburg on 50 μm thick epitaxial silicon layer. One sample was not irradiated before using as a dosimeter, while the other received a gamma pre-dose of 200kGy from 60 Co. For comparison, a standard float zone silicon diode was also studied. The samples irradiation was performed using X-ray beams from a Pantak/Seifert generator, model Isovolt 160 HS, previously calibrated with standardized ionization chambers, located at Laboratorio de Calibracao de Instrumentos of IPEN-CNEN/SP. The diode was connected to an electrometer Keithley 6517B in the photovoltaic mode. Irradiations were carried out with the diodes positioned at lm from the X-ray tube (focal spot). The main dosimetric parameters of the EPI samples were evaluated in according to IEC 61674 norm. The calibration coefficients of the diode, in terms of air kerma, were also determined. The repeatability was measured with photon beams of all qualities. The current signals induced showed the diodes are stable, characterized by coefficients of variation less than 0.3%. The current response of the unirradiated EPI diode has been shown to be very linear with dose-rate in the range of 0.8 up to 77.2 mGy/min. A linear relation between charge and dose in the whole energy range was observed for the three samples. It is important to notice that for EPI diodes non energy dependence was observed for mammography beams and until 70kV for radiodiagnostic qualities. The unirradiated diode presented sensitivity higher than the others, showing a decrease of 8% in this parameter after accumulated dose of 49.15 Gy. The dark currents were stable about 0.4 pA during the irradiations, value 10 4 higher than the lowest photocurrents measured. The directional response of both
Diode Laser for Laryngeal Surgery: a Systematic Review.
Arroyo, Helena Hotz; Neri, Larissa; Fussuma, Carina Yuri; Imamura, Rui
2016-04-01
Introduction The diode laser has been frequently used in the management of laryngeal disorders. The portability and functional diversity of this tool make it a reasonable alternative to conventional lasers. However, whether diode laser has been applied in transoral laser microsurgery, the ideal parameters, outcomes, and adverse effects remain unclear. Objective The main objective of this systematic review is to provide a reliable evaluation of the use of diode laser in laryngeal diseases, trying to clarify its ideal parameters in the larynx, as well as its outcomes and complications. Data Synthesis We included eleven studies in the final analysis. From the included articles, we collected data on patient and lesion characteristics, treatment (diode laser's parameters used in surgery), and outcomes related to the laser surgery performed. Only two studies were prospective and there were no randomized controlled trials. Most of the evidence suggests that the diode laser can be a useful tool for treatment of different pathologies in the larynx. In this sense, the parameters must be set depending on the goal (vaporization, section, or coagulation) and the clinical problem. The literature lacks studies on the ideal parameters of the diode laser in laryngeal surgery. The available data indicate that diode laser is a useful tool that should be considered in laryngeal surgeries. Thus, large, well-designed studies correlated with diode compared with other lasers are needed to better estimate its effects.
Plasma-filled diode based on the coaxial gun
Energy Technology Data Exchange (ETDEWEB)
Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N. [Institute of High Current Electronics, 2/3 Academichesky Avenue, 634055 Tomsk (Russian Federation)
2012-10-15
The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of {>=}1 MeV at the current of Almost-Equal-To 100 kA was obtained in the experiments with a plasma-filled diode. The energy of Almost-Equal-To 5 kJ with the peak power of {>=}100 GW dissipated in the diode.
Analytic model of Applied-B ion diode impedance behavior
International Nuclear Information System (INIS)
Miller, P.A.; Mendel, C.W. Jr.
1987-01-01
An empirical analysis of impedance data from Applied-B ion diodes used in seven inertial confinement fusion research experiments was published recently. The diodes all operated with impedance values well below the Child's-law value. The analysis uncovered an unusual unifying relationship among data from the different experiments. The analysis suggested that closure of the anode-cathode gap by electrode plasma was not a dominant factor in the experiments, but was not able to elaborate the underlying physics. Here we present a new analytic model of Applied-B ion diodes coupled to accelerators. A critical feature of the diode model is based on magnetic insulation theory. The model successfully describes impedance behavior of these diodes and supports stimulating new viewpoints of the physics of Applied-B ion diode operation
Current transport mechanisms in mercury cadmium telluride diode
Energy Technology Data Exchange (ETDEWEB)
Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [Institute of Defence Scientists and Technologists, CFEES Complex, Brig. S. K. Majumdar Marg, Delhi 110054 (India); Li, Qing; He, Jiale; Hu, Weida, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); He, Kai; Lin, Chun [Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)
2016-08-28
This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.
High-performance noncontact thermal diode via asymmetric nanostructures
Shen, Jiadong; Liu, Xianglei; He, Huan; Wu, Weitao; Liu, Baoan
2018-05-01
Electric diodes, though laying the foundation of modern electronics and information processing industries, suffer from ineffectiveness and even failure at high temperatures. Thermal diodes are promising alternatives to relieve above limitations, but usually possess low rectification ratios, and how to obtain a high-performance thermal rectification effect is still an open question. This paper proposes an efficient contactless thermal diode based on the near-field thermal radiation of asymmetric doped silicon nanostructures. The rectification ratio computed via exact scattering theories is demonstrated to be as high as 10 at a nanoscale gap distance and period, outperforming the counterpart flat-plate diode by more than one order of magnitude. This extraordinary performance mainly lies in the higher forward and lower reverse radiative heat flux within the low frequency band compared with the counterpart flat-plate diode, which is caused by a lower loss and smaller cut-off wavevector of nanostructures for the forward and reversed scheme, respectively. This work opens new routes to realize high performance thermal diodes, and may have wide applications in efficient thermal computing, thermal information processing, and thermal management.
Compact laser-diode-based femtosecond sources
International Nuclear Information System (INIS)
Brown, C T A; Cataluna, M A; Lagatsky, A A; Rafailov, E U; Agate, M B; Leburn, C G; Sibbett, W
2004-01-01
This paper describes the development of compact femtosecond laser systems that are capable of being directly pumped by laser diodes or are based directly on laser diodes. The paper demonstrates the latest results in a highly efficient vibronic based gain medium and a diode-pumped Yb:KYW laser is reported that has a wall plug efficiency >14%. A Cr 4+ :YAG oscillator is described that generates transform-limited pulses of 81 fs duration at a pulse repetition frequency of >4 GHz. The development of Cr 3+ :LiSAF lasers that can be operated using power supplies based on batteries is briefly discussed. We also present a summary of work being carried out on the generation of fs-pulses from laser diodes and discuss the important issues in this area. Finally, we outline results obtained on the generation of pulses as short as 550 fs directly from a two-section quantum dot laser without any external pulse compression
Proto-I switching and diode studies
International Nuclear Information System (INIS)
Prestwich, K.R.; Miller, P.A.; McDaniel, D.H.; Poukey, J.W.; Widner, M.M.; Goldstein, S.A.
1975-01-01
Proto-I is a 3 MV, 800 kA, 24 ns electron beam accelerator that is under development at Sandia Laboratories. It represents an initial effort to develop a scalable technology that is applicable to accelerators for electron beam driven, inertial confinement fusion studies. Energy is supplied to each of the two diodes from six oil-dielectric Blumlein transmission lines (PFL) operating in parallel. A Marx generator charges three intermediate storage, water-dielectric capacitors which subsequently transfer the stored energy to the PFL. The discharge of the PFL is initiated by the simultaneous closure of 12 triggered oil-dielectric rail switches. Data will be presented on the operation of these multichannel switches. The two diodes have a common anode. Cathode diameters can be varied from 10 to 60 cm. Results of initial diode experiments and comparisons with theory are discussed. Plasma filled diode experiments are also reported, indicating pinch collapse velocities in excess of 10 9 cm/s
Diode laser (980nm) cartilage reshaping
El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.
2011-03-01
Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.
Thermic diode performance characteristics and design manual
Bernard, D. E.; Buckley, S.
1979-01-01
Thermic diode solar panels are a passive method of space and hot water heating using the thermosyphon principle. Simplified methods of sizing and performing economic analyses of solar heating systems had until now been limited to passive systems. A mathematical model of the thermic diode including its high level of stratification has been constructed allowing its performance characteristics to be studied. Further analysis resulted in a thermic diode design manual based on the f-chart method.
Wavelength stabilized multi-kW diode laser systems
Köhler, Bernd; Unger, Andreas; Kindervater, Tobias; Drovs, Simon; Wolf, Paul; Hubrich, Ralf; Beczkowiak, Anna; Auch, Stefan; Müntz, Holger; Biesenbach, Jens
2015-03-01
We report on wavelength stabilized high-power diode laser systems with enhanced spectral brightness by means of Volume Holographic Gratings. High-power diode laser modules typically have a relatively broad spectral width of about 3 to 6 nm. In addition the center wavelength shifts by changing the temperature and the driving current, which is obstructive for pumping applications with small absorption bandwidths. Wavelength stabilization of high-power diode laser systems is an important method to increase the efficiency of diode pumped solid-state lasers. It also enables power scaling by dense wavelength multiplexing. To ensure a wide locking range and efficient wavelength stabilization the parameters of the Volume Holographic Grating and the parameters of the diode laser bar have to be adapted carefully. Important parameters are the reflectivity of the Volume Holographic Grating, the reflectivity of the diode laser bar as well as its angular and spectral emission characteristics. In this paper we present detailed data on wavelength stabilized diode laser systems with and without fiber coupling in the spectral range from 634 nm up to 1533 nm. The maximum output power of 2.7 kW was measured for a fiber coupled system (1000 μm, NA 0.22), which was stabilized at a wavelength of 969 nm with a spectral width of only 0.6 nm (90% value). Another example is a narrow line-width diode laser stack, which was stabilized at a wavelength of 1533 nm with a spectral bandwidth below 1 nm and an output power of 835 W.
Energy Technology Data Exchange (ETDEWEB)
Chartier, P [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires
1970-07-01
In a first part, after a brief review of tunnel diode properties, the paper presents graphic and analytic investigations of series, shunt and compound connected tunnel diode amplifiers. A study of the noise problem is given. In a second part, practical realizations are described and results of measurements of their gain and noise characteristics are presented. (author) [French] Une premiere partie presente, apres une breve revue des proprietes de la diode tunnel, une etude graphique et analytique des amplificateurs a diode tunnel, pour les configurations serie, parallele et serie-parallele. Le bruit de fond y est egalement etudie. La seconde partie decrit quelques realisations pratiques et indique les resultats des mesures effectuees sur le gain et le bruit de fond. (auteur)
Diode Laser Application in Soft Tissue Oral Surgery
Azma, Ehsan; Safavi, Nassimeh
2013-01-01
Introduction: Diode laser with wavelengths ranging from 810 to 980 nm in a continuous or pulsed mode was used as a possible instrument for soft tissue surgery in the oral cavity. Discussion: Diode laser is one of laser systems in which photons are produced by electric current with wavelengths of 810, 940 and 980nm. The application of diode laser in soft tissue oral surgery has been evaluated from a safety point of view, for facial pigmentation and vascular lesions and in oral surgery excision; for example frenectomy, epulis fissuratum and fibroma. The advantages of laser application are that it provides relatively bloodless surgical and post surgical courses with minimal swelling and scarring. We used diode laser for excisional biopsy of pyogenic granuloma and gingival pigmentation. Conclusion: The diode laser can be used as a modality for oral soft tissue surgery PMID:25606331
High Performance Single Nanowire Tunnel Diodes
DEFF Research Database (Denmark)
Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal
NWs were contacted in a NW-FET setup. Electrical measurements at room temperature display typical tunnel diode behavior, with a Peak-to-Valley Current Ratio (PVCR) as high as 8.2 and a peak current density as high as 329 A/cm2. Low temperature measurements show improved PVCR of up to 27.6....... is the tunnel (Esaki) diode, which provides a low-resistance connection between junctions. We demonstrate an InP-GaAs NW axial heterostructure with tunnel diode behavior. InP and GaAs can be readily n- and p-doped, respectively, and the heterointerface is expected to have an advantageous type II band alignment...
Ultrafast photoconductor detector-laser-diode transmitter
International Nuclear Information System (INIS)
Wang, C.L.; Davis, B.A.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.
1987-01-01
We report the results of an experiment in which we used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When we irradiated the neutron-damaged Cr-doped GaAs detector with 17-MeV electron beams, the temporal response was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. We are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip
XUV preionization effects in high power magnetically insulated diodes
International Nuclear Information System (INIS)
Maenchen, J.; Woodworth, J.R.; Foltz, B.W.
1985-01-01
Electrode surface desorption and photoionization by an intense XUV pulse has been shown to dramatically improve a vacuum diode impedance history. The 6-Terawatt Applied-B ion diode experiment on PBFA I is limited by a delay in both diode and ion current initiation. The insulation magnetic field impedes electron crossings which are believed to aid the ion source initiation. The diode is therefore initially a severe overmatch to the accelerator 40-nsec, 2.2-MV, 0.5-ohm pulse. The diode current increases during the pulse, leading to a rapidly falling impedance history. The application of an intense (30 to 50-kW/cm 2 ) XUV flux from an array of sixteen 60-kA spark sources is found to cause immediate diode current flow, resulting in both a greatly improved impedance history and the prompt initiation of an intense higher power ion beam
Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel
2005-01-01
We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current–voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur–gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current–voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current–voltage characteristics, similar to the phenomena in a semiconductor diode. PMID:15956208
Energy Technology Data Exchange (ETDEWEB)
NONE
2006-07-01
The aim of this project has been to develop technological knowledge and a competence platform for utilization of new light emitting diode technology for general lighting purposes. Furthermore the project has aimed at developing a 3 W light diode bulb to replace 15-20 W filament bulbs and halogen spotlights, and thereby demonstrating a large energy conservation potential in the use of LED technology for lighting purposes. (BA)
Experimental observations on long pulse intense ion diode operation
International Nuclear Information System (INIS)
Prono, D.S.; Clark, R.; Prestwich, K.
1976-01-01
An experiment in which a long pulse electron beam diode is converted to a reflex ion diode is reported. The results further substantiate the model of reflex ion diode behavior as well as extend the duration of ion mode operation to greater than 500 nsec
High power diode lasers converted to the visible
DEFF Research Database (Denmark)
Jensen, Ole Bjarlin; Hansen, Anders Kragh; Andersen, Peter E.
2017-01-01
High power diode lasers have in recent years become available in many wavelength regions. However, some spectral regions are not well covered. In particular, the visible spectral range is lacking high power diode lasers with good spatial quality. In this paper, we highlight some of our recent...... results in nonlinear frequency conversion of high power near infrared diode lasers to the visible spectral region....
Phase-change radiative thermal diode
Ben-Abdallah, Philippe; Biehs, Svend-Age
2013-01-01
A thermal diode transports heat mainly in one preferential direction rather than in the opposite direction. This behavior is generally due to the non-linear dependence of certain physical properties with respect to the temperature. Here we introduce a radiative thermal diode which rectifies heat transport thanks to the phase transitions of materials. Rectification coefficients greater than 70% and up to 90% are shown, even for small temperature differences. This result could have important ap...
Crosstalk of HgCdTe LWIR n-on-p diode arrays
International Nuclear Information System (INIS)
Sun Yinghui; Zhang Bo; Yu Meifang; Liao Qingjun; Zhang Yan; Wen Xin; Jiang Peilu; Hu Xiaoning; Dai Ning
2009-01-01
Crosstalk of HgCdTe long-wavelength infrared (LWIR) n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, HgCdTe diode arrays with different diode pitches were frontside illuminated by a He-Ne laser at liquid nitrogen temperature and room temperature. The experimental results show that crosstalk between the nearest neighboring diodes decreases exponentially as the diode pitch increases, and the factors that affect the obtained crosstalk are presented and analyzed. Crosstalk out of the nominal diode area (optically sensitive area) is also measured and discussed.
Linear variable voltage diode capacitor and adaptive matching networks
Larson, L.E.; De Vreede, L.C.N.
2006-01-01
An integrated variable voltage diode capacitor topology applied to a circuit providing a variable voltage load for controlling variable capacitance. The topology includes a first pair of anti-series varactor diodes, wherein the diode power-law exponent n for the first pair of anti-series varactor
Simulations of Large-Area Electron Beam Diodes
Swanekamp, S. B.; Friedman, M.; Ludeking, L.; Smithe, D.; Obenschain, S. P.
1999-11-01
Large area electron beam diodes are typically used to pump the amplifiers of KrF lasers. Simulations of large-area electron beam diodes using the particle-in-cell code MAGIC3D have shown the electron flow in the diode to be unstable. Since this instability can potentially produce a non-uniform current and energy distribution in the hibachi structure and lasing medium it can be detrimental to laser efficiency. These results are similar to simulations performed using the ISIS code.(M.E. Jones and V.A. Thomas, Proceedings of the 8^th) International Conference on High-Power Particle Beams, 665 (1990). We have identified the instability as the so called ``transit-time" instability(C.K. Birdsall and W.B. Bridges, Electrodynamics of Diode Regions), (Academic Press, New York, 1966).^,(T.M. Antonsen, W.H. Miner, E. Ott, and A.T. Drobot, Phys. Fluids 27), 1257 (1984). and have investigated the role of the applied magnetic field and diode geometry. Experiments are underway to characterize the instability on the Nike KrF laser system and will be compared to simulation. Also some possible ways to mitigate the instability will be presented.
Ultrafast photoconductive detector-laser-diode transmitter
International Nuclear Information System (INIS)
Wang, C.L.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.; Davis, B.A.
1987-01-01
The authors report the results of an experiment in which they used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When they irradiated the neutron-damaged Cr-doped Ga/As detector with 17-MeV electron beams, the temporal response of was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. They are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip
Destructive Single-Event Effects in Diodes
Casey, Megan C.; Lauenstein, Jean-Marie; Campola, Michael J.; Wilcox, Edward P.; Phan, Anthony M.; Label, Kenneth A.
2017-01-01
In this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations.
Charles, P H; Cranmer-Sargison, G; Thwaites, D I; Kairn, T; Crowe, S B; Pedrazzini, G; Aland, T; Kenny, J; Langton, C M; Trapp, J V
2014-10-01
Two diodes which do not require correction factors for small field relative output measurements are designed and validated using experimental methodology. This was achieved by adding an air layer above the active volume of the diode detectors, which canceled out the increase in response of the diodes in small fields relative to standard field sizes. Due to the increased density of silicon and other components within a diode, additional electrons are created. In very small fields, a very small air gap acts as an effective filter of electrons with a high angle of incidence. The aim was to design a diode that balanced these perturbations to give a response similar to a water-only geometry. Three thicknesses of air were placed at the proximal end of a PTW 60017 electron diode (PTWe) using an adjustable "air cap". A set of output ratios (ORDet (fclin) ) for square field sizes of side length down to 5 mm was measured using each air thickness and compared to ORDet (fclin) measured using an IBA stereotactic field diode (SFD). kQclin,Qmsr (fclin,fmsr) was transferred from the SFD to the PTWe diode and plotted as a function of air gap thickness for each field size. This enabled the optimal air gap thickness to be obtained by observing which thickness of air was required such that kQclin,Qmsr (fclin,fmsr) was equal to 1.00 at all field sizes. A similar procedure was used to find the optimal air thickness required to make a modified Sun Nuclear EDGE detector (EDGEe) which is "correction-free" in small field relative dosimetry. In addition, the feasibility of experimentally transferring kQclin,Qmsr (fclin,fmsr) values from the SFD to unknown diodes was tested by comparing the experimentally transferred kQclin,Qmsr (fclin,fmsr) values for unmodified PTWe and EDGEe diodes to Monte Carlo simulated values. 1.0 mm of air was required to make the PTWe diode correction-free. This modified diode (PTWeair) produced output factors equivalent to those in water at all field sizes (5-50 mm
Overview on new diode lasers for defense applications
Neukum, Joerg
2012-11-01
Diode lasers have a broad wavelength range, from the visible to beyond 2.2μm. This allows for various applications in the defense sector, ranging from classic pumping of DPSSL in range finders or target designators, up to pumping directed energy weapons in the 50+ kW range. Also direct diode applications for illumination above 1.55μm, or direct IR countermeasures are of interest. Here an overview is given on some new wavelengths and applications which are recently under discussion. In this overview the following aspects are reviewed: • High Power CW pumps at 808 / 880 / 940nm • Pumps for DPAL - Diode Pumped Alkali Lasers • High Power Diode Lasers in the range market.
Self-magnetically insulated ion diode
International Nuclear Information System (INIS)
VanDevender, J.; Quintenz, J.; Leeper, R.; Johnson, D.; Crow, J.
1981-01-01
Light ion diodes for producing 1--100 TW ion beams are required for inertial confinement fusion. The theory, numerical simulations, and experiments on a self-magnetically insulated ion diode are presented. The treatment is from the point of view of a self-magnetically insulated transmission line with an ion loss current and differs from the usual treatment of the pinched electron beam diode. The simulations show that the ratio V/IZ 0 =0.25 in such a structure with voltage V, local total current I, and local vacuum wave impedance Z 0 . The ion current density is enhanced by a factor of approximately 2 over the simple space-charge limited value. The simulation results are verified in an experiment. An analytical theory is then presented for scaling the results to produce a focused beam of protons with a power of up to 10 13 W
Polycrystalline Diamond Schottky Diodes and Their Applications.
Zhao, Ganming
In this work, four-hot-filament CVD techniques for in situ boron doped diamond synthesis on silicon substrates were extensively studied. A novel tungsten filament shape and arrangement used to obtain large-area, uniform, boron doped polycrystalline diamond thin films. Both the experimental results and radiative heat transfer analysis showed that this technique improved the uniformity of the substrate temperature. XRD, Raman and SEM studies indicate that large area, uniform, high quality polycrystalline diamond films were obtained. Schottky diodes were fabricated by either sputter deposition of silver or thermal evaporation of aluminum or gold, on boron doped diamond thin films. High forward current density and a high forward-to-reverse current ratio were exhibited by silver on diamond Schottky diodes. Schottky barrier heights and the majority carrier concentrations of both aluminum and gold contacted diodes were determined from the C-V measurements. Furthermore, a novel theoretical C-V-f analysis of deep level boron doped diamond Schottky diodes was performed. The analytical results agree well with the experimental results. Compressive stress was found to have a large effect on the forward biased I-V characteristics of the diamond Schottky diodes, whereas the effect on the reverse biased characteristics was relatively small. The stress effect on the forward biased diamond Schottky diode was attributed to piezojunction and piezoresistance effects. The measured force sensitivity of the diode was as high as 0.75 V/N at 1 mA forward bias. This result shows that CVD diamond device has potential for mechanical transducer applications. The quantitative photoresponse characteristics of the diodes were studied in the spectral range of 300 -1050 nm. Semi-transparent gold contacts were used for better photoresponse. Quantum efficiency as high as 50% was obtained at 500 nm, when a reverse bias of over 1 volt was applied. The Schottky barrier heights between either gold or
Radiation resistant quench protection diodes for the LHC
International Nuclear Information System (INIS)
Hagedorn, D.; Coull, L.
1994-01-01
The quench protection diodes for the proposed Large Hadron Collider at CERN will be located inside the He-II vessel of the short straight section of one half cell, where they could be exposed to a radiation dose of about 50 kGy and a total neutron fluence of about 10 15 n/cm 2 over 10 years at temperatures of about 2 K. To investigate the influence of irradiation on the electrical characteristics of the diodes, newly developed diodes of thin base region of the diffusion type and of the epitaxial type have been submitted to irradiation tests at liquid nitrogen temperature in a target area of the SPS accelerator at CERN. The degradation of the electrical characteristics of the diodes for a radiation dose up to about 20 kGy and neutron fluence of up to about 5 10 14 n/cm 2 and the effect of carrier injection and thermal annealing after irradiation have been measured. The test results show that only the thin base diodes of the epitaxial type are really radiation resistant. A compromise must be found between required blocking characteristics and radiation resistance. Annealing by carrier injection and occasional warm up to room temperature can extend the service life of irradiated diodes quite substantially
Cryogenic thermometry with a common diode: type BAS16
Rijpma, A.P.; ter Brake, Hermanus J.M.
2006-01-01
Cryogenic test experiments often require a large number of temperatures to be monitored. In order to reduce cost, we investigated the feasibility of low-cost common diodes. We chose the Philips BAS16 diode in a type SOT23 package. By means of Stycast 2850FT, these diodes were glued into alumina
Asymmetric anode and cathode extraction structure fast recovery diode
Xie, Jiaqiang; Ma, Li; Gao, Yong
2018-05-01
This paper presents an asymmetric anode structure and cathode extraction fast and soft recovery diode. The device anode is partial-heavily doped and partial-lightly doped. The P+ region is introduced into the cathode. Firstly, the characteristics of the diode are simulated and analyzed. Secondly, the diode was fabricated and its characteristics were tested. The experimental results are in good agreement with the simulation results. The results show that, compared with the P–i–N diode, although the forward conduction characteristic of the diode is declined, the reverse recovery peak current is reduced by 47%, the reverse recovery time is shortened by 20% and the softness factor is doubled. In addition, the breakdown voltage is increased by 10%. Project supported by the National Natural Science Foundation of China (No. 51177133).
High-power green diode laser systems for biomedical applications
DEFF Research Database (Denmark)
Müller, André
propagation parameters and therefore efficiently increases the brightness of compact and cost-effective diode laser systems. The condition of overlapping beams is an ideal scenario for subsequent frequency conversion. Based on sum-frequency generation of two beam combined diode lasers a 3.2 fold increase...... output power of frequency doubled single emitters is limited by thermal effects potentially resulting in laser degradation and failure. In this work new concepts for power scaling of visible diode laser systems are introduced that help to overcome current limitations and enhance the application potential....... Implementing the developed concept of frequency converted, beam combined diode laser systems will help to overcome the high pump thresholds for ultrabroad bandwidth titanium sapphire lasers, leading towards diode based high-resolution optical coherence tomography with enhanced image quality. In their entirety...
Cryogenic thermometry with a common diode: Type BAS16
Rijpma, A.P.; Brake, ter H.J.M.
2006-01-01
Cryogenic test expts. often require a large no. of temps. to be monitored. In order to reduce cost, we investigated the feasibility of low-cost common diodes. We chose the Philips BAS16 diode in a type SOT23 package. By means of Stycast 2850FT, these diodes were glued into alumina holders. In total,
High Power High Efficiency Diode Laser Stack for Processing
Gu, Yuanyuan; Lu, Hui; Fu, Yueming; Cui, Yan
2018-03-01
High-power diode lasers based on GaAs semiconductor bars are well established as reliable and highly efficient laser sources. As diode laser is simple in structure, small size, longer life expectancy with the advantages of low prices, it is widely used in the industry processing, such as heat treating, welding, hardening, cladding and so on. Respectively, diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. At this power level, it can have many important applications, such as surgery, welding of polymers, soldering, coatings and surface treatment of metals. But there are some applications, which require much higher power and brightness, e.g. hardening, key hole welding, cutting and metal welding. In addition, High power diode lasers in the military field also have important applications. So all developed countries have attached great importance to high-power diode laser system and its applications. This is mainly due their low performance. In this paper we will introduce the structure and the principle of the high power diode stack.
International Nuclear Information System (INIS)
Hwang, Hyun.
1994-08-01
Polarized Z degrees decays into three jets have been detected and measured in the SLAC Large Detector (SLD) experiment operating it the SLAC Linear Collider (SLC). The hadrons from the jets were detected in the SLD liquid argon calorimeter, providing a sensitivity over 98% of the solid angle. The spin of the gluon was tested by studying the scaled jet energies (x 1 , x 2 , x 3 ), the Ellis-Karliner angle (cosθ EK ) and the parameters of event plane orientation (α, α N , β). These measured variables are compared with quantum chromodynamics (QCD) and a scalar gluon model. Good agreement is found between data, and the vector QCD model for the distributions of (x 1 , x 2 , x 3 ) and (cosθ EK ). Two detector prototypes for the GEM detector of the Superconducting Super Collider have been studied: a prototype silicon-tungsten preradiator and a liquid argon hadron calorimeter. The silicon-tungsten preradiator was designed for the GEM detector to distinguish between single photons from Higgs decay and background photon pairs from π degrees decay. This preradiator was tested in a beam at Brookhaven National Laboratory in July, 1992. A lead glass array placed behind the silicon was used to determine energy resolution effects. The results from the test on spatial distributions and energy resolution, including correction for the energy deposited in the preradiator are presented, along with comparisons to EGS simulations. Data from a beam test of the liquid argon prototype was analyzed and compared to CALOR89 simulations. The studies concentrated on energy resolution optimization and electronic noise suppression
Next generation diode lasers with enhanced brightness
Ried, S.; Rauch, S.; Irmler, L.; Rikels, J.; Killi, A.; Papastathopoulos, E.; Sarailou, E.; Zimer, H.
2018-02-01
High-power diode lasers are nowadays well established manufacturing tools in high power materials processing, mainly for tactile welding, surface treatment and cladding applications. Typical beam parameter products (BPP) of such lasers range from 30 to 50 mm·mrad at several kilowatts of output power. TRUMPF offers a product line of diode lasers to its customers ranging from 150 W up to 6 kW of output power. These diode lasers combine high reliability with small footprint and high efficiency. However, up to now these lasers are limited in brightness due to the commonly used spatial and coarse spectral beam combining techniques. Recently diode lasers with enhanced brightness have been presented by use of dense wavelength multiplexing (DWM). In this paper we report on TRUMPF's diode lasers utilizing DWM. We demonstrate a 2 kW and a 4 kW system ideally suited for fine welding and scanner welding applications. The typical laser efficiency is in the range of 50%. The system offers plug and play exchange of the fiber beam delivery cable, multiple optical outputs and integrated cooling in a very compact package. An advanced control system offers flexible integration in any customer's shop floor environment and includes industry 4.0 capabilities (e.g. condition monitoring and predictive maintenance).
High-power direct diode laser output by spectral beam combining
Tan, Hao; Meng, Huicheng; Ruan, Xu; Du, Weichuan; Wang, Zhao
2018-03-01
We demonstrate a spectral beam combining scheme based on multiple mini-bar stacks, which have more diode laser combining elements, to increase the combined diode laser power and realize equal beam quality in both the fast and slow axes. A spectral beam combining diode laser output of 1130 W is achieved with an operating current of 75 A. When a 9.6 X de-magnifying telescope is introduced between the output mirror and the diffraction grating, to restrain cross-talk among diode laser emitters, a 710 W spectral beam combining diode laser output is achieved at the operating current of 70 A, and the beam quality on the fast and slow axes of the combined beam is about 7.5 mm mrad and 7.3 mm mrad respectively. The power reduction is caused by the existence of a couple resonator between the rear facet of the diode laser and the fast axis collimation lens, and it should be eliminated by using diode laser chips with higher front facet transmission efficiency and a fast axis collimation lens with lower residual reflectivity.
Conical pinched electron beam diode for intense ion beam source
International Nuclear Information System (INIS)
Matsukawa, Yoshinobu; Nakagawa, Yoshiro
1982-01-01
For the purpose of improvement of the pinched electron beam diode, the production of an ion beam by a diode with electrodes in a conical shape was studied at low voltage operation (--200 kV). The ion beam is emitted from a small region of the diode apex. The mean ion beam current density near the axis at 12 cm from the diode apex is two or three times that from an usual flat parallel diode with the same dimension and impedance. The brightness and the power brightness at the otigin are 450 MA/cm 2 sr and 0.12 TW/cm 2 sr respectively. (author)
Production of ion beam by conical pinched electron beam diode
International Nuclear Information System (INIS)
Matsukawa, Y.; Nakagawa, Y.
1982-01-01
Some properties of the ion beam produced by pinched electron beam diode having conical shape electrodes and organic insulator anode was studied. Ion energy is about 200keV and the peak diode current is about 30 kA. At 11cm from the diode apex, not the geometrical focus point, concentrated ion beam was obtained. Its density is more than 500A/cm 2 . The mean ion current density within the radius of 1.6cm around the axis from conical diode is two or three times that from an usual pinched electron beam diode with flat parallel electrodes of same dimension and impedance under the same conditions. (author)
Current in heavy-current planar diode with discrete emission surface
International Nuclear Information System (INIS)
Belomyttsev, S.Ya.; Korovin, S.D.; Pegel', I.V
1999-01-01
Dependence of current in a high-current planar diode on the size of emission centres was studied. Essential effect of emission surface microstructure on the current value in the planar diode was demonstrated. It was determined that if the distance between the emitter essentially exceeded their size then current dependence on the ratio of size to the value of the diode gap was an exponential function with 3/2 index. Current dependence on voltage obeyed the exponential law with 3/2 index up to higher voltage values in the planar diode with discrete emission surface in contrast to the case of a planar diode with homogeneous emission surface [ru
Disruptive laser diode source for embedded LIDAR sensors
Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier
2017-02-01
Active imaging based on laser illumination is used in various fields such as medicine, security, defense, civil engineering and in the automotive sector. In this last domain, research and development to bring autonomous vehicles on the roads has been intensified these last years with an emphasis on lidar technology that is probably the key to achieve full automation level. Based on time-of-flight measurements, the profile of objects can be measured together with their location in various conditions, creating a 3D mapping of the environment. To be embedded on a vehicle as advanced driver assistance systems (ADAS), these sensors require compactness, low-cost and reliability, as it is provided by a flash lidar. An attractive candidate, especially with respect to cost reduction, for the laser source integrated in these devices is certainly laser diodes as long as they can provide sufficiently short pulses with a high energy. A recent breakthrough in laser diode and diode driver technology made by Quantel (Les Ulis, France) now allows laser emission higher than 1 mJ with pulses as short as 12 ns in a footprint of 4x5 cm2 (including both the laser diode and driver) and an electrical-to-optical conversion efficiency of the whole laser diode source higher than 25% at this level of energy. The components used for the laser source presented here can all be manufactured at low cost. In particular, instead of having several individual laser diodes positioned side by side, the laser diodes are monolithically integrated on a single semiconductor chip. The chips are then integrated directly on the driver board in a single assembly step. These laser sources emit in the range of 800-1000 nm and their emission is considered to be eye safe when taking into account the high divergence of the output beam and the aperture of possible macro lenses so that they can be used for end consumer applications. Experimental characterization of these state-of-the-art pulsed laser diode sources
Durability of PEDOT: PSS-pentacene Schottky diode
International Nuclear Information System (INIS)
Kang, K S; Lim, H K; Cho, K Y; Han, K J; Kim, Jaehwan
2008-01-01
The durability and failure cause of a polymer Schottky diode made with PEDOT : PSS-pentacene were investigated. A polymer Schottky diode was fabricated by dissolving pentacene in N-methylpyrrolidone (NMP) and mixing with PEDOT : PSS. Pentacene solution having a maximum concentration of approximately 9.7 mmoles was prepared by simply stirring the solution at room temperature for 36 h. As the pentacene concentration increased, the absorption of the broad UV regime increased dramatically. However, absorption peaks of pentacene at 301 and 260 nm were not observed for the PEDOT : PSS-pentacene. A three-layered polymer Schottky diode was fabricated and its current-voltage (I-V) characteristic was evaluated. The current was reduced by 7% in the first 50 min and then stabilized during biased electrical field sweeps. After 500 and 800 min, catastrophic failure occurred. FESEM images revealed that the electrode damage caused catastrophic failure of the Schottky diode. (fast track communication)
Nonimaging concentrators for diode-pumped slab lasers
Lacovara, Philip; Gleckman, Philip L.; Holman, Robert L.; Winston, Roland
1991-10-01
Diode-pumped slab lasers require concentrators for high-average power operation. We detail the properties of diode lasers and slab lasers which set the concentration requirements and the concentrator design methodologies that are used, and describe some concentrator designs used in high-average power slab lasers at Lincoln Laboratory.
Development of a semiconductor neutron dosimeter with a PIN diode
International Nuclear Information System (INIS)
Kim, Seungho; Lee, Namho; Cho, Jaiwan; Youk, Geunuck
2004-01-01
When a Si PIN diode is exposed to fast neutrons, it produces displacement in Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed, and multi PIN diode arrays with various intrinsic layer (I layer) thicknesses and cross sections were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have good characteristics of linearity in a neutron irradiation experiment and give results that the increase of thickness of I layer and the decrease of the cross-section of the PIN diodes improve the sensitivity. Newly developed PIN diodes with a thicker I layer and various cross sections were retested and showed the best neutron sensitivity in the condition that the I layer thickness was similar to the length of a side of the cross-section. On the basis of two test results, final PIN diodes with a rectangular shape were manufactured and the characteristics for neutron detectors were analyzed through the neutron beam test using the on-line electronic dosimetry system. The developed PIN diode shows a good linearity to absorbed dose in the range of 0 to 1,000cGy (Tissue) and its neutron sensitivity is 13 mV/cGy at a constant current of 5 mA, that is three higher than that of similar commercially developed neutron detectors. Moreover the device shows less dependency on the orientation of the neutron beam and a considerable stability in an annealing test for a long period. (author)
Patient dosimetry quality assurance program with a commerical diode system
International Nuclear Information System (INIS)
Lee, P.C.; Sawicka, J.M.; Glasgow, G.P.
1994-01-01
The purpose was to evaluate a commercial silicone diode dosimeter for a patient dosimetry quality assurance program. The diode dosimeter was calibrated against an ion chamber, and percentage depth dose, linearity, anisotrophy, virtual source position, and field size factor studies were performed. Correction factors for lack of full scatter medium in the diode entrance and exit dose measurements were acquired. Dosimetry equations were proposed for calculation of dose delivered at isocenter. Diode dose accuracy and reproducibility were tested on phantom and on four patients. A patient dosimetry quality assurance program based on diode-measured dose was instituted and patient dose data were collected. Diode measured percentage depth dose and field factors agreed to within 3% with those measured with an ion chamber. The diode exhibited less than 1.7% angular dose anisotrophy and less than 0.5% nonlinearity up to 4 Gy. Diode dose measurements in phantom showed that the calculated doses differed from the prescribed dose by less than 1.%; the diode exhibited a daily dose reproducibility of better than 0.2%. On four selected patients, the measured dose reproducibility was 1.5%; the average calculated doses were all within ± 7% of the prescribed doses. For 33 of 40 patients treated with a 6 MW beam, measured doses were within ± 7% of the prescribed doses. For 11 out of 12 patients, a second repeat measurements yielded doses within ± 7% of the prescribed doses. The proposed diode-based patient dosimetry quality assurance program with dose tolerance at ± 7% is simple and feasible. It is capable of detecting certain serious treatment errors such as incorrect daily dose greater than 7%, incorrect wedge use, incorrect photon energy and patient setup errors involving some incorrect source-to-surface-distance vs. source-to-axis-distance treatments. 13 refs., 5 figs., 5 tabs
Laser diagnostics on magnetically insulated flashover pulsed ion diodes
International Nuclear Information System (INIS)
Horioka, K.; Tazima, N.; Fukui, T.; Kasuya, K.
1989-01-01
Our recent experimental results on the characteristics of a flashover-type applied-B magnetically insulated pulsed ion diode are described. The main issues are to investigate the cause of impurity of the extracted beam and to examine the effect of neutral particles on the diode characteristics. In the experiment, our main efforts were placed on laser diagnostics of the diode gap behavior. (author)
Photoluminescence excitation measurements using pressure-tuned laser diodes
Bercha, Artem; Ivonyak, Yurii; Medryk, Radosław; Trzeciakowski, Witold A.; Dybała, Filip; Piechal, Bernard
2015-06-01
Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available.
Photoluminescence excitation measurements using pressure-tuned laser diodes
International Nuclear Information System (INIS)
Bercha, Artem; Ivonyak, Yurii; Mędryk, Radosław; Trzeciakowski, Witold A.; Dybała, Filip; Piechal, Bernard
2015-01-01
Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available
Quaternary InGaAsSb Thermophotovoltaic Diode Technology
International Nuclear Information System (INIS)
M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl
2005-01-01
Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency (η TPV ) and a power density (PD) of η TPV = 19% and PD=0.58 W/cm 2 were measured for T radiator = 950 C and T diode = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be η TPV = 26% and PD = 0.75 W/cm 2 . These limits are extended to η TPV = 30% and PD = 0.85W/cm 2 if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are ∼10
Active stabilization of a diode laser injection lock.
Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep
2016-06-01
We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.
Bayer, Andreas; Unger, Andreas; Köhler, Bernd; Küster, Matthias; Dürsch, Sascha; Kissel, Heiko; Irwin, David A.; Bodem, Christian; Plappert, Nora; Kersten, Maik; Biesenbach, Jens
2016-03-01
The demand for high brightness fiber coupled diode laser devices in the multi kW power region is mainly driven by industrial applications for materials processing, like brazing, cladding and metal welding, which require a beam quality better than 30 mm x mrad and power levels above 3kW. Reliability, modularity, and cost effectiveness are key factors for success in the market. We have developed a scalable and modular diode laser architecture that fulfills these requirements through use of a simple beam shaping concept based on two dimensional stacking of tailored diode bars mounted on specially designed, tap water cooled heat sinks. The base element of the concept is a tailored diode laser bar with an epitaxial and lateral structure designed such that the desired beam quality in slow-axis direction can be realized without using sophisticated beam shaping optics. The optical design concept is based on fast-axis collimator (FAC) and slow-axis collimator (SAC) lenses followed by only one additional focusing optic for efficient coupling into a 400 μm fiber with a numerical aperture (NA) of 0.12. To fulfill the requirements of scalability and modularity, four tailored bars are populated on a reduced size, tap water cooled heat sink. The diodes on these building blocks are collimated simply via FAC and SAC. The building blocks can be stacked vertically resulting in a two-dimensional diode stack, which enables a compact design of the laser source with minimum beam path length. For a single wavelength, up to eight of these building blocks, implying a total of 32 tailored bars, can be stacked into a submodule, polarization multiplexed, and coupled into a 400 μm, 0.12NA fiber. Scalability into the multi kW region is realized by wavelength combining of replaceable submodules in the spectral range from 900 - 1100 nm. We present results of a laser source based on this architecture with an output power of more than 4 kW and a beam quality of 25 mm x mrad.
Common rectifier diodes in temperature measurement applications below 50 K
International Nuclear Information System (INIS)
Jaervelae, J; Stenvall, A; Mikkonen, R
2010-01-01
In this paper we studied the use of common electronic semiconductor diodes in temperature measurements at cryogenic atmosphere. The motivation for this is the high price of calibrated cryogenic temperature sensors since there are some applications, like quench detection, in which a cheaper and a less accurate sensor would suffice. We measured the forward voltage as a function of temperature, V f (T), of several silicon rectifier diodes to determine the accuracy and interchangeability of the diodes. The experimental results confirmed that V f (T) of common rectifier diodes are similar to cryogenic sensor diodes, but the variability between two samples is much larger. The interchangeability of the diodes proved to be poor if absolute temperatures are to be measured. However for sensing changes in temperature they proved to be adequate and thus can be used to measure e.g. quench propagation or sense quench ignition at multiple locations with cheap price.
Design, fabrication and testing of a thermal diode
Swerdling, B.; Kosson, R.
1972-01-01
Heat pipe diode types are discussed. The design, fabrication and test of a flight qualified diode for the Advanced Thermal Control Flight Experiment (ATFE) are described. The review covers the use of non-condensable gas, freezing, liquid trap, and liquid blockage techniques. Test data and parametric performance are presented for the liquid trap and liquid blockage techniques. The liquid blockage technique was selected for the ATFE diode on the basis of small reservoir size, low reverse mode heat transfer, and apparent rapid shut-off.
outcome of diode laser cyclophotocoagulation in neovascular ...
African Journals Online (AJOL)
Duke
including, ruby, ND:YAG, argon, krypton and, more recently, trans scleral cyclophotocoagulation with the diode laser, which has been shown to be more effective with less side effects than the others. The diode laser, 810nm, has. 4,5 greater melanin absorption compared to other lasers. Of the various cyclodestructive laser ...
Power MOSFET-diode-based limiter for high-frequency ultrasound systems.
Choi, Hojong; Kim, Min Gon; Cummins, Thomas M; Hwang, Jae Youn; Shung, K Kirk
2014-10-01
The purpose of the limiter circuits used in the ultrasound imaging systems is to pass low-voltage echo signals generated by ultrasonic transducers while preventing high-voltage short pulses transmitted by pulsers from damaging front-end circuits. Resistor-diode-based limiters (a 50 Ω resistor with a single cross-coupled diode pair) have been widely used in pulse-echo measurement and imaging system applications due to their low cost and simple architecture. However, resistor-diode-based limiters may not be suited for high-frequency ultrasound transducer applications since they produce large signal conduction losses at higher frequencies. Therefore, we propose a new limiter architecture utilizing power MOSFETs, which we call a power MOSFET-diode-based limiter. The performance of a power MOSFET-diode-based limiter was evaluated with respect to insertion loss (IL), total harmonic distortion (THD), and response time (RT). We compared these results with those of three other conventional limiter designs and showed that the power MOSFET-diode-based limiter offers the lowest IL (-1.33 dB) and fastest RT (0.10 µs) with the lowest suppressed output voltage (3.47 Vp-p) among all the limiters at 70 MHz. A pulse-echo test was performed to determine how the new limiter affected the sensitivity and bandwidth of the transducer. We found that the sensitivity and bandwidth of the transducer were 130% and 129% greater, respectively, when combined with the new power MOSFET-diode-based limiter versus the resistor-diode-based limiter. Therefore, these results demonstrate that the power MOSFET-diode-based limiter is capable of producing lower signal attenuation than the three conventional limiter designs at higher frequency operation. © The Author(s) 2014.
Performance of EPI diodes as dosimeters for photon beam radiotherapy
Energy Technology Data Exchange (ETDEWEB)
Santos, Thais C. dos; Bizetto, Cesar A., E-mail: ccbueno@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Neves-Junior, Wellington F.P.; Haddad, Cecilia M.K. [Hospital Sirio Libanes (HSL), Sao Paulo, SP (Brazil); Goncalves, Josemary A.C.; Bueno, Carmen C. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Pontificia Universidade Catolica de Sao Paulo (PUC-SP), SP (Brazil)
2011-07-01
In this work we present the preliminary results about the performance of an epitaxial (EPI) diode as on-line dosimeter for photon beam radiotherapy. The diode used was processed at University of Hamburg on n-type 75 {mu}m thick epitaxial silicon layer grown on a highly doped n-type 300 {mu}m thick Czochralski (Cz) silicon substrate. The measurements were performed with a diode which not received any type of pre-dose. In order to use this device as a dosimeter, it was enclosed in a black polymethylmethacrylate (PMMA) probe. The diode was connected to an electrometer Keithley 6517B in the photovoltaic mode. During all measurements, the diode was held between PMMA plates, placed at 10.0 cm depth and centered in a radiation field of 10 x 10 cm{sup 2}, with the source-to-surface distance (SSD) kept at 100 cm. The short-term repeatability was measured with photon beams of 6 and 18 MV energy by registering five consecutive current signals for the same radiation dose. The current signals induced showed good instantaneous repeatability of the diode, characterized by a smallest coefficient of variation (CV) of 0.21%. Furthermore, the dose-response curves of the diode were quite linear with the highest charge sensitivity achieved of 5.0 {mu}C/Gy. It worth noting that still remains to be investigated the pre-dose influence on epitaxial silicon diode response in radiotherapy photon beam dosimetry, the long term stability and the radiation hardness of these diodes for absorbed doses higher than that investigated in this work. All these studies are under way. (author)
Ampfion-hybrid diode on the Cornell LION accelerator
International Nuclear Information System (INIS)
Rondeau, G.D.; Greenly, J.B.; Hammer, D.A.
1984-01-01
An ampfion hybrid diode, previously run on the HYDRAMITE accelerator at Sandia National Laboratories has recently been installed on the Cornell LION accelerator (1 TW, 1.8 MV, 40 ns pulse). The ampfion hybrid diode is magnetically insulated by means of a field coil in series with the cathode structure of the diode. An epoxy dielectric flashboard on the anode provides an anode plasma to supply the extracted ions. The diode has a geometric focal length of 20 cm. The experiment is equipped with plasma erosion opening switches on the anode stock to eliminate prepulse and improve the generator voltage risetime. Diagnostics include magnetic pickup loops to measure currents in the diode structure and non-neutral beam currents, biased charge collectors, and damage targets. An alpha particle pin hole camera utilizing the p,α reaction of fast (>500 kV) protons on boron or lithium is being developed to measure focus quality and proton current. Plastic track detector will be used to image the alpha particles coming from a boron or lithium target. A second pin hole camera uses a plastic scintillator and light detector to give time resolved focused ion intensity
Active stabilization of a diode laser injection lock
Energy Technology Data Exchange (ETDEWEB)
Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep [Department of Physics, University of Washington, P.O. Box 351560, Seattle, Washington 98195-1560 (United States)
2016-06-15
We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.
Active graphene-silicon hybrid diode for terahertz waves.
Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili
2015-05-11
Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.
Active stabilization of a diode laser injection lock
International Nuclear Information System (INIS)
Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep
2016-01-01
We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.
Molecular diodes in optical rectennas
Duché, David; Palanchoke, Ujwol; Terracciano, Luigi; Dang, Florian-Xuan; Patrone, Lionel; Le Rouzo, Judikael; Balaban, Téodore Silviu; Alfonso, Claude; Charai, Ahmed; Margeat, Olivier; Ackermann, Jorg; Gourgon, Cécile; Simon, Jean-Jacques; Escoubas, Ludovic
2016-09-01
The photo conversion efficiencies of the 1st and 2nd generat ion photovoltaic solar cells are limited by the physical phenomena involved during the photo-conversion processes. An upper limit around 30% has been predicted for a monojunction silicon solar cell. In this work, we study 3rd generation solar cells named rectenna which could direct ly convert visible and infrared light into DC current. The rectenna technology is at odds with the actual photovoltaic technologies, since it is not based on the use of semi-conducting materials. We study a rectenna architecture consist ing of plasmonic nano-antennas associated with rectifying self assembled molecular diodes. We first opt imized the geometry of plasmonic nano-antennas using an FDTD method. The optimal antennas are then realized using a nano-imprint process and associated with self assembled molecular diodes in 11- ferrocenyl-undecanethiol. Finally, The I(V) characterist ics in darkness of the rectennas has been carried out using an STM. The molecular diodes exhibit averaged rect ification ratios of 5.
Spectral perturbations from silicon diode detector encapsulation and shielding in photon fields.
Eklund, Karin; Ahnesjö, Anders
2010-11-01
Silicon diodes are widely used as detectors for relative dose measurements in radiotherapy. The common manufacturing practice is to encapsulate the diodes in plastic for protection and to facilitate mounting in scanning devices. Diodes intended for use in photon fields commonly also have a shield of a high atomic number material (usually tungsten) integrated into the encapsulation to selectively absorb low-energy photons to which silicon diodes would otherwise over-response. However, new response models based on cavity theories and spectra calculations have been proposed for direct correction of the readout from unshielded (e.g., "electron") diodes used in photon fields. This raises the question whether it is correct to assume that the spectrum in a water phantom at the location of the detector cavity is not perturbed by the detector encapsulation materials. The aim of this work is to investigate the spectral effects of typical encapsulations, including shielding, used for clinical diodes. The effects of detector encapsulation of an unshielded and a shielded commercial diode on the spectra at the detector cavity location are studied through Monte Carlo simulations with PENELOPE-2005. Variance reduction based on correlated sampling is applied to reduce the CPU time needed for the simulations. The use of correlated sampling is found to be efficient and to not introduce any significant bias to the results. Compared to reference spectra calculated in water, the encapsulation for an unshielded diode is demonstrated to not perturb the spectrum, while a tungsten shielded diode caused not only the desired decrease in low-energy scattered photons but also a large increase of the primary electron fluence. Measurements with a shielded diode in a 6 MV photon beam proved that the shielding does not completely remove the field-size dependence of the detector response caused by the over-response from low-energy photons. Response factors of a properly corrected unshielded diode
Production of intense negative ion beams in magnetically insulated diodes
International Nuclear Information System (INIS)
Lindenbaum, H.
1988-01-01
Production of intense negative ion beams in magnetically insulated diodes was studied in order to develop an understanding of this process by measuring the ion-beam parameters as a function of diode and cathode plasma conditions in different magnetically insulated diodes. A coral diode, a racetrack diode, and an annular diode were used. The UCI APEX pulse line, with a nominal output of 1MV, 140kA, was used under matched conditions with a pulse length of 50 nsec. Negative-ion intensity and divergence were measured with Faraday cups and CR-39 track detectors. Cathode plasma was produced by passive dielectric cathodes and later, by an independent plasma gun. Negative-ion currents had an intensity of a few A/cm 2 with a divergence ranging between a few tenths milliradians for an active TiH 2 plasma gun and 300 milliradians for a passive polyethelene cathode. Negative ions were usually emitted from a few hot spots on the cathode surface. These hot spots are believed to cause transverse electrical fields in the diode gap responsible for the beam divergence. Mass spectrometry measurements showed that the ion beam consists of mainly H - ions when using a polyethelene or a TiH 2 cathodes, and mainly of negative carbon ions when using a carbon cathode
High performance Schottky diodes based on indium-gallium-zinc-oxide
Energy Technology Data Exchange (ETDEWEB)
Zhang, Jiawei; Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Xin, Qian [School of Physics, Shandong University, Jinan 250100 (China)
2016-07-15
Indium-gallium-zinc-oxide (IGZO) Schottky diodes exhibit excellent performance in comparison with conventional devices used in future flexible high frequency electronics. In this work, a high performance Pt IGZO Schottky diode was presented by using a new fabrication process. An argon/oxygen mixture gas was introduced during the deposition of the Pt layer to reduce the oxygen deficiency at the Schottky interface. The diode showed a high barrier height of 0.92 eV and a low ideality factor of 1.36 from the current–voltage characteristics. Even the radius of the active area was 0.1 mm, and the diode showed a cut-off frequency of 6 MHz in the rectifier circuit. Using the diode as a demodulator, a potential application was also demonstrated in this work.
Stability of high current diode under 100-nanosecond-pulse voltage
International Nuclear Information System (INIS)
Lai Dingguo; Qiu Aici; Zhang Yongmin; Huang Jianjun; Ren Shuqing; Yang Li
2012-01-01
Stability of high current diode under pulse voltage with 80 ns and 34 ns rise time was studied on the flash Ⅱ accelerator. Influence of rise time of diode voltage on startup time and cathode emission uniformity and repeatability of diode impedance was analyzed by comparing the experimental results with numerically simulated results, and the influence mechanism was discussed. The startup time of diode increases with the increasing of rise time of voltage, and the repeatability of diode impedance decreases. Discal plane cathode is prone to emit rays intensely in the center area, the time that plasma covers the surface of the cathode increases and the shielding effect has more impact on cathode emission according to the increase of rise time. Local intense emission on the cathode increases expansion speed of plasma and reduces the effective emission area. The stability of characteristic impedance of diode under a pulse voltage with slow rise time is decreased by the combined action of expansion speed of plasma and the effective emission area. (authors)
High brightness diode lasers controlled by volume Bragg gratings
Glebov, Leonid
2017-02-01
Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.
Impedance characteristics of the Bz diode on the LION accelerator
International Nuclear Information System (INIS)
Meyerhofer, D.D.; Horioka, K.; Kusse, B.; Rondeau, G.; Struckman, C.
1987-01-01
The LION accelerator at Cornell University is being used to study the characteristics of the applied B/sub z/, or 'barrel' diode. This 0.8 TW, 4 ohm, ion accelerator has the ability to take several shots per day, and hence alloys systematic scans to be performed. An important result of a recent series of experiments is that the diode impedance remains relatively constant, decaying only slowly, during the 50 nsec pulse. When the diode is operated with a 4.5 mm gap and a 21 kG insulating magnetic field, the typical diode parameters, are a voltage of 1 MV and a total current of 250 kA, leading to a diode impedance of 4 ohms and power of 0.25 TW. The diode impedance decays with a 100 nsec time constant. The ion beams have peak currents of roughly 125 kA and typical impedances of Bohms, which decays with a time constant of 25 nsec. The Child-Langmuir gap was approximately 2 mm and closed with a velocity of roughly 2X10/sup 6/ cm/sec. Current experimental work is aimed at characterizing the impedance of the B/sub z/ diode as a function of the applied magnetic field, the A-K gap, the anode curvature, and the anode groove parameters. In addition, the effect of changing the voltage rise with a plasma opening switch and of adding an electron limiter is examined. The ion beam quality is examined at the focus of the barrel diode with a swept Thomson parabola and various Rutherford scattering diagnostics
High efficiency and broadband acoustic diodes
Fu, Congyi; Wang, Bohan; Zhao, Tianfei; Chen, C. Q.
2018-01-01
Energy transmission efficiency and working bandwidth are the two major factors limiting the application of current acoustic diodes (ADs). This letter presents a design of high efficiency and broadband acoustic diodes composed of a nonlinear frequency converter and a linear wave filter. The converter consists of two masses connected by a bilinear spring with asymmetric tension and compression stiffness. The wave filter is a linear mass-spring lattice (sonic crystal). Both numerical simulation and experiment show that the energy transmission efficiency of the acoustic diode can be improved by as much as two orders of magnitude, reaching about 61%. Moreover, the primary working band width of the AD is about two times of the cut-off frequency of the sonic crystal filter. The cut-off frequency dependent working band of the AD implies that the developed AD can be scaled up or down from macro-scale to micro- and nano-scale.
Design concepts for PBFA-II's applied-B ion diode
International Nuclear Information System (INIS)
Rovang, D.C.
1985-01-01
The lithium ion diode to be used at the center of Particle Beam Fusion Accelerator-II (PBFA-II) at Sandia National Laboratories is an applied-B ion diode. The center section of the PBFA-II accelerator is where the electrical requirements of the accelerator, the design requirements of the diode, and the operational requirements must all be satisfied simultaneously for a successful experiment. From an operational standpoint, the ion diode is the experimental hub of the accelerator and needs to be easily and quickly installed and removed. Because of the physical size and geometry of the PBFA-II center section, achieving the operational requirements has presented an interesting design challenge. A discussion of the various design requirements and the proposed concepts for satisfying them is presented
Zener diode controls switching of large direct currents
1965-01-01
High-current zener diode is connected in series with the positive input terminal of a dc supply to block the flow of direct current until a high-frequency control signal is applied across the zener diode. This circuit controls the switching of large dc signals.
Dose rate and SDD dependence of commercially available diode detectors
International Nuclear Information System (INIS)
Saini, Amarjit S.; Zhu, Timothy C.
2004-01-01
The dose-rate dependence of commercially available diode detectors was measured under both high instantaneous dose-rate (pulsed) and low dose rate (continuous, Co-60) radiation. The dose-rate dependence was measured in an acrylic miniphantom at a 5-cm depth in a 10x10 cm 2 collimator setting, by varying source-to-detector distance (SDD) between at least 80 and 200 cm. The ratio of a normalized diode reading to a normalized ion chamber reading (both at SDD=100 cm) was used to determine diode sensitivity ratio for pulsed and continuous radiation at different SDD. The inverse of the diode sensitivity ratio is defined as the SDD correction factor (SDD CF). The diode sensitivity ratio increased with increasing instantaneous dose rate (or decreasing SDD). The ratio of diode sensitivity, normalized to 4000 cGy/s, varied between 0.988 (1490 cGy/s)-1.023 (38 900 cGy/s) for unirradiated n-type Isorad Gold, 0.981 (1460 cGy/s)-1.026 (39 060 cGy/s) for unirradiated QED Red (n type), 0.972 (1490 cGy/s)-1.068 (38 900 cGy/s) for preirradiated Isorad Red (n type), 0.985 (1490 cGy/s)-1.012 (38 990 cGy/s) for n-type Pt-doped Isorad-3 Gold, 0.995 (1450 cGy/s)-1.020 (21 870 cGy/s) for n-type Veridose Green, 0.978 (1450 cGy/s)-1.066 (21 870 cGy/s) for preirradiated Isorad-p Red, 0.994 (1540 cGy/s)-1.028 (17 870 cGy/s) for p-type preirradiated QED, 0.998 (1450 cGy/s)-1.003 (21 870 cGy/s) for the p-type preirradiated Scanditronix EDP20 3G , and 0.998 (1490 cGy/s)-1.015 (38 880 cGy/s) for Scanditronix EDP10 3G diodes. The p-type diodes do not always show less dose-rate dependence than the n-type diodes. Preirradiation does not always reduce diode dose-rate dependence. A comparison between the SDD dependence measured at the surface of a full scatter phantom and that in a miniphantom was made. Using a direct adjustment of radiation pulse height, we concluded that the SDD dependence of diode sensitivity can be explained by the instantaneous dose-rate dependence if sufficient buildup is
Application of AXUV diode detectors at ASDEX Upgrade
Bernert, M.; Eich, T.; Burckhart, A.; Fuchs, J. C.; Giannone, L.; Kallenbach, A.; McDermott, R. M.; Sieglin, B.
2014-03-01
In the ASDEX Upgrade tokamak, a radiation measurement for a wide spectral range, based on semiconductor detectors, with 256 lines of sight and a time resolution of 5μs was recently installed. In combination with the foil based bolometry, it is now possible to estimate the absolutely calibrated radiated power of the plasma on fast timescales. This work introduces this diagnostic based on AXUV (Absolute eXtended UltraViolet) n-on-p diodes made by International Radiation Detectors, Inc. The measurement and the degradation of the diodes in a tokamak environment is shown. Even though the AXUV diodes are developed to have a constant sensitivity for all photon energies (1 eV-8 keV), degradation leads to a photon energy dependence of the sensitivity. The foil bolometry, which is restricted to a time resolution of less than 1 kHz, offers a basis for a time dependent calibration of the diodes. The measurements of the quasi-calibrated diodes are compared with the foil bolometry and found to be accurate on the kHz time scale. Therefore, it is assumed, that the corrected values are also valid for the highest time resolution (200 kHz). With this improved diagnostic setup, the radiation induced by edge localized modes is analyzed on fast timescales.
Application of AXUV diode detectors at ASDEX Upgrade
International Nuclear Information System (INIS)
Bernert, M.; Eich, T.; Burckhart, A.; Fuchs, J. C.; Giannone, L.; Kallenbach, A.; McDermott, R. M.; Sieglin, B.
2014-01-01
In the ASDEX Upgrade tokamak, a radiation measurement for a wide spectral range, based on semiconductor detectors, with 256 lines of sight and a time resolution of 5μs was recently installed. In combination with the foil based bolometry, it is now possible to estimate the absolutely calibrated radiated power of the plasma on fast timescales. This work introduces this diagnostic based on AXUV (Absolute eXtended UltraViolet) n-on-p diodes made by International Radiation Detectors, Inc. The measurement and the degradation of the diodes in a tokamak environment is shown. Even though the AXUV diodes are developed to have a constant sensitivity for all photon energies (1 eV-8 keV), degradation leads to a photon energy dependence of the sensitivity. The foil bolometry, which is restricted to a time resolution of less than 1 kHz, offers a basis for a time dependent calibration of the diodes. The measurements of the quasi-calibrated diodes are compared with the foil bolometry and found to be accurate on the kHz time scale. Therefore, it is assumed, that the corrected values are also valid for the highest time resolution (200 kHz). With this improved diagnostic setup, the radiation induced by edge localized modes is analyzed on fast timescales
Light Converting Inorganic Phosphors for White Light-Emitting Diodes
Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi
2010-01-01
White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incand...
InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications
Bhapkar, Udayan V.; Li, Yongjun; Mattauch, Robert J.
1992-01-01
This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.
Directory of Open Access Journals (Sweden)
Jin Lan (兰金
2015-12-01
Full Text Available A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound states in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. Our findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.
Seven-laser diode end-pumped Nd
International Nuclear Information System (INIS)
Berger, J.; Welch, D.F.; Streifer, W.; Scifres, D.R.; Smith, J.J.; Hoffman, H.J.; Peisley, D.; Radecki, D.
1988-01-01
End pumping of solid-state lasers by single semiconductor laser diode arrays (LDAs) is efficient, but the maximum pump power is limited by the source brightness and matching the TEM/sub 00/ Nd:YAG cavity mode. To increase the output power from a solid-state Nd:YAG laser, one option is to employ a multiplicity of LDA to provide more pump power than is available from a single source. The authors report herein a 660-mW cw TEM/sub 00/ Nd:YAG laser, end-pumped by seven LDA, with bundled optical fibers coupling the light from each diode to the Nd:YAG rod end. The maximum electrical-to-optical conversion efficiency attained was 4.7% at 560-mW Nd:YAG output power. The LDAs (SDL-2430-C, 100 μm wide) were mounted on separate thermoelectric coolers to tune emission wavelength to the Nd:YAG absorption bands. The diodes were operated at their rated output power (50,000 h mean time to failure). The 110/125-μm diam 0.37-N.A. fibers were butt coupled to the lasers and glued together into a hexagonal close pack. The authors have obtained the highest average power demonstrated to date in the TEM/sub 00/ mode from a Nd:YAG laser, reliably end-pumped by multiple laser diodes with good efficiency
Vortex Diode Analysis and Testing for Fluoride Salt-Cooled High-Temperature Reactors
International Nuclear Information System (INIS)
Yoder, Graydon L. Jr.; Elkassabgi, Yousri M.; De Leon, Gerardo I.; Fetterly, Caitlin N.; Ramos, Jorge A.; Cunningham, Richard Burns
2012-01-01
Fluidic diodes are presently being considered for use in several fluoride salt-cooled high-temperature reactor designs. A fluidic diode is a passive device that acts as a leaky check valve. These devices are installed in emergency heat removal systems that are designed to passively remove reactor decay heat using natural circulation. The direct reactor auxiliary cooling system (DRACS) uses DRACS salt-to-salt heat exchangers (DHXs) that operate in a path parallel to the core flow. Because of this geometry, under normal operating conditions some flow bypasses the core and flows through the DHX. A flow diode, operating in reverse direction, is-used to minimize this flow when the primary coolant pumps are in operation, while allowing forward flow through the DHX under natural circulation conditions. The DRACSs reject the core decay heat to the environment under loss-of-flow accident conditions and as such are a reactor safety feature. Fluidic diodes have not previously been used in an operating reactor system, and therefore their characteristics must be quantified to ensure successful operation. This report parametrically examines multiple design parameters of a vortex-type fluidic diode to determine the size of diode needed to reject a particular amount of decay heat. Additional calculations were performed to size a scaled diode that could be tested in the Oak Ridge National Laboratory Liquid Salt Flow Loop. These parametric studies have shown that a 152.4 mm diode could be used as a test article in that facility. A design for this diode is developed, and changes to the loop that will be necessary to test the diode are discussed. Initial testing of a scaled flow diode has been carried out in a water loop. The 150 mm diode design discussed above was modified to improve performance, and the final design tested was a 171.45 mm diameter vortex diode. The results of this testing indicate that diodicities of about 20 can be obtained for diodes of this size. Experimental
Electron dosimetry in irradiation processing with rad-hard diodes
International Nuclear Information System (INIS)
Santos, Thais Cavalheri dos
2012-01-01
This work had the aim of the development of dosimetric systems based on Si special diodes, resistant to radiation damage to online monitoring of irradiation processing using 1.5 MeV electrons energy and for relative dosimetry and clinical electron beam scanning within an energy range of 6 MeV up to 21 MeV. The diodes used were produced by Float Zone standard (FZ), Magnetic Czochralski (MCz) and epitaxy growth (EPI) methods. In order to use the diodes as detectors, they were fixed on alumina base to allow the connection of the polarization electrodes and the signals extraction. After the diode assembly on the base, each one was housed in a black acrylic probe with aluminized Mylar® window and LEMO® connector. With the devices operating in photovoltaic mode, the integration of the current signals as a function of irradiation time allowed obtain the charge produced in the sensitive volume of each diode irradiated. The electron accelerator used for high doses irradiation was the DC 1500/25/4 JOB 188 of the 1.5 MeV installed at the Radiation Technology Center of the IPEN/CNEN-SP. The current profile as function of exposure time, the response repeatability, the sensitivity as function of absorbed dose and the dose response curve were studied for each device. In comparison to FZ diode, we observed a greater decrease in the sensitivity for MCz diode, and good repeatability in both cases. Also, the increasing of the charge with the absorbed dose was well fitted by a second order polynomial function. In the EPI diode characterization, this one exhibited repeatability better than CTA dosimeters applied routinely in radiation processing. The above results indicate the potential use of these radiation hardness Si diodes in online dosimetry to high doses applications. For low doses irradiation were used the linear accelerators KD2 and Primus, both manufactured by Siemens and located at Sirio-Libanes Hospital. The diodes responses were evaluated for electron beams within the
Method and system for homogenizing diode laser pump arrays
Bayramian, Andy J
2013-10-01
An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.
International Nuclear Information System (INIS)
Chen, Wei-Chung; Hsu, Po-Ching; Chien, Chih-Wei; Chang, Kuei-Ming; Hsu, Chao-Jui; Chang, Ching-Hsiang; Lee, Wei-Kai; Chou, Wen-Fang; Wu, Chung-Chih; Hsieh, Hsing-Hung
2014-01-01
In this work, we report successful implementation of room-temperature-processed flexible n-InGaZnO/p-Cu 2 O heterojunction diodes on polyethylene naphthalate (PEN) plastic substrates using the sputtering technique. Using n-type InGaZnO and p-type Cu 2 O films deposited by sputtering at room temperature, flexible n-InGaZnO/p-Cu 2 O heterojunction diodes were successfully fabricated on PEN plastic substrates. The didoes on PEN substrates exhibited a low apparent turn-on voltage of 0.44 V, a high rectification ratio of up to 3.4 × 10 4 at ±1.2 V, a high forward current of 1 A cm −2 around 1 V and a decent ideality factor of 1.4, similar to the characteristics of n-InGaZnO/p-Cu 2 O diodes fabricated on glass substrates. The characterization of the frequency response of the room-temperature-processed flexible n-InGaZnO/p-Cu 2 O heterojunction diode rectifiers indicated that they are capable of high-frequency operation up to 27 MHz, sufficient for high-frequency (13.56 MHz) applications. Preliminary bending tests on diode characteristics and rectifier frequency responses indicate their promise for applications in flexible electronics. (paper)
A novel diode laser system for photodynamic therapy
DEFF Research Database (Denmark)
Samsøe, E.; Andersen, P. E.; Petersen, P.
2001-01-01
In this paper a novel diode laser system for photodynamic therapy is demonstrated. The system is based on linear spatial filtering and optical phase conjugate feedback from a photorefractive BaTiO3 crystal. The spatial coherence properties of the diode laser are significantly improved. The system...
Effect of laser-diode light on growth of Lactuca sativa L
International Nuclear Information System (INIS)
Yamazaki, A.; Tsuchiya, H.; Miyajima, H.; Honma, T.; Kan, H.
2000-01-01
Development of an effective, high-power, low-cost, artificial light source for use in plant-growing facilities would be very beneficial for plant production. Recently, the laser-diode lamp was proposed as a new type of light source for plant production. The advantages of the laser-diode lamp over conventional light sources are its high electrical-to-optical power conversion efficiency, low thermal radiation, easy set-up for high power and pulse irradiation, small weight and small volume for mounting, and selectivity for proper wavelength. Because laser light itself differs from the light sources presently used in plant growing, we confirmed the possibility of growing plants under the laser-diode light using lettuces. Lettuce seedlings with 5-6 leaves were grown under a laser-diode lamp panel with 30 pieces of high-power and high-efficiency AlGaInP laser-diodes. The power of each laser-diode lamp was 500 mW, and the wavelength was 680 nm, which was efficient for photosynthesis. The lettuce plants were able to grow under the laser-diode light. However, plants were lighter and had thinner leaves than those grown under high-pressure sodium lamps. (author)
Mis-diode as a low-energy X- and γ-ray spectrometer
International Nuclear Information System (INIS)
Konova, A.
1980-01-01
Considered are main peculiarities of apparata called MIS-diods having metal-thin isolating semiconductor structure and used as detectors of low-energy gamma and X-ray radiation. Discussed are advantages of tunnel MIS-diods based on non-primitive carriers. Presented are results of experimental measurements carried out using system of metal-silion oxide-silicon with the oxide layer width of 10-25 A (silicon with acceptor concentration of 10 19 m -3 ). Data presented show that MIS-diods can be considered as diods with p-n - transition in which n + - region is an inversion layer near the semiconductor surface, and further a leant region is situated. When voltage is applied only the depth of the leant region changes. In case of high quality diods the leakage currents are very small. Results of the investigation performed show that MIS-diods with oxide film wiolth of 10-22 A (the film covering p-silicon with high specific resistance) can be used as spectrometers of low-energy photons having particularly high energetic solution at room temperature. An advantage of new diods is the reverse current significantly lower in comparison with that of usual detectors with the Schottky barrier
Ion channelling analysis of pre-amorphised silicon diodes using a nuclear microprobe
International Nuclear Information System (INIS)
Thornton, J.; Paus, K.C.
1988-01-01
Aligned and random ion channelling analysis was performed on p + n diode structures in silicon, with the Surrey nuclear microprobe. Three different types of diode were investigated, each pre-amorphised by a different ion (Si + , Ge + or Sn + ) before the p + region was formed by BF 2 + implantation. The ion channelling measurements are presented and compared with previously published electrical measurements on these diodes. Relatively large residual disorder and junction leakage currents were found for the Si + pre-amorphised diodes; however, all the diodes were leaky. The results are consistent with dislocation loops within the depletion regions of the diodes causing both the residual disorder and the large leakage currents. Cross-sectional transmission electron microscopy studies support this model. (author)
Fabrication study of GaAs mesa diodes for X-ray detection
Ng, J.S.; Meng, X.; Lees, J.E.; Barnett, A.; Tan, C.H.
2014-01-01
A study of leakage currents using GaAs mesa p-i-n diodes for X-ray photon counting is presented. Different wet chemical etching solution and etch depth were used in the fabrication of these mesa diodes. Low and uniform leakage currents were achieved when the diode fabrication used (i) a combination of main etching solution and finishing etching solution for the etching, and (ii) partially etched mesas. The diodes fabricated using these methods showed well-defined X-ray peaks when illuminated ...
Tapered diode laser pumped 946 nm Nd:YAG laser
DEFF Research Database (Denmark)
Cheng, Haynes Pak Hay; Jensen, Ole Bjarlin; Petersen, Paul Michael
2009-01-01
We successfully implemented a 946 nm Nd:YAG laser based on a 808 nm tapered diode pump laser. The tapered diode is developed at the Ferdinand-Braun-Institute fur Hochstfrequenztechnik in Germany. Figure 2 shows the experimental setup and results of each pump source coupled into a 1.5 mm crystal...... laser, we show that tapered diode laser pumping potentially increase the power of 946 nm lasers by a factor of two and reduce the threshold by a factor of three....
Compact 2100 nm laser diode module for next-generation DIRCM
Dvinelis, Edgaras; Greibus, Mindaugas; TrinkÅ«nas, Augustinas; NaujokaitÄ--, Greta; Vizbaras, Augustinas; Vizbaras, Dominykas; Vizbaras, Kristijonas
2017-10-01
Compact high-power 2100 nm laser diode module for next-generation directional infrared countermeasure (DIRCM) systems is presented. Next-generation DIRCM systems require compact, light-weight and robust laser modules which could provide intense IR light emission capable of disrupting the tracking sensor of heat-seeking missile. Currently used solid-state and fiber laser solutions for mid-IR band are bulky and heavy making them difficult to implement in smaller form-factor DIRCM systems. Recent development of GaSb laser diode technology greatly improved optical output powers and efficiencies of laser diodes working in 1900 - 2450 nm band [1] while also maintaining very attractive size, weight, power consumption and cost characteristics. 2100 nm laser diode module presented in this work performance is based on high-efficiency broad emitting area GaSb laser diode technology. Each laser diode emitter is able to provide 1 W of CW output optical power with working point efficiency up to 20% at temperature of 20 °C. For output beam collimation custom designed fast-axis collimator and slow-axis collimator lenses were used. These lenses were actively aligned and attached using UV epoxy curing. Total 2 emitters stacked vertically were used in 2100 nm laser diode module. Final optical output power of the module goes up to 2 W at temperature of 20 °C. Total dimensions of the laser diode module are 35 x 25 x 16 mm (L x W x H) with a weight of 28 grams. Finally output beam is bore-sighted to mechanical axes of the module housing allowing for easy integration into next-generation DIRCM systems.
Constant-current regulator improves tunnel diode threshold-detector performance
Cancro, C. A.
1965-01-01
Grounded-base transistor is placed in a tunnel diode threshold detector circuit, and a bias voltage is applied to the tunnel diode. This provides the threshold detector with maximum voltage output and overload protection.
Electrical parameters of metal doped n-CdO/p-Si heterojunction diodes
Energy Technology Data Exchange (ETDEWEB)
Umadevi, P. [Department of Physics, Sri Vidya College of Engineering & Technology, Virudhunagar 626005, Tamilnadu (India); Prithivikumaran, N., E-mail: janavi_p@yahoo.com [Nanoscience Research Lab, Department of Physics, VHNSN College, Virudhunagar 626001, Tamilnadu (India)
2016-11-15
The CdO, Al doped CdO and Cu doped CdO thin films were coated on p-type silicon substrates by sol–gel spin coating method. The structural, surface morphological and electrical properties of undoped, Al and Cu doped CdO films on silicon substrate were studied. The Ag/CdO/p-Si, Ag/Al: CdO/p-Si and Ag/Cu: CdO/p-Si heterojunction diodes were fabricated and the diode parameters such as reverse saturation current, barrier height and ideality factor of the diodes were investigated by current–voltage (I–V)characteristics. The reverse current of the diode was found to increase strongly with the doping. The values of barrier height and ideality factor were decreased by doping with aluminium and copper. Photo response of the heterojunction diodes was studied and it was found that, the heterojunction diode constructed with the doped CdO has larger Photo response than the undoped heterojunction diode.
Photon response of silicon diode neutron detectors
International Nuclear Information System (INIS)
McCall, R.C.; Jenkins, T.M.; Oliver, G.D. Jr.
1976-07-01
The photon response of silicon diode neutron detectors was studied to solve the problem on detecting neutrons in the presence of high energy photons at accelerator neutron sources. For the experiment Si diodes, Si discs, and moderated activation foil detectors were used. The moderated activation foil detector consisted of a commercial moderator and indium foils 2'' in diameter and approximately 2.7 grams each. The moderator is a cylinder of low-density polyethylene 6 1 / 4 '' in diameter by 6 1 / 16 '' long covered with 0.020'' of cadmium. Neutrons are detected by the reaction 115 In (n,γ) 116 In(T/sub 1 / 2 / = 54 min). Photons cannot be detected directly but photoneutrons produced in the moderator assembly can cause a photon response. The Si discs were thin slices of single-crystal Si about 1.4 mils thick and 1'' in diameter which were used as activation detectors, subsequently being counted on a thin-window pancake G.M. counter. The Si diode fast neutron dosimeter 5422, manufactured by AB Atomenergi in Studsvik, Sweden, consists of a superdoped silicon wafer with a base width of 0.050 inches between two silver contacts coated with 2 mm of epoxy. For this experiment, the technique of measuring the percent change of voltage versus dose was used. Good precision was obtained using both unirradiated and preirradiated diodes. All diodes, calibrated against 252 CF in air,were read out 48 hours after irradiation to account for any room temperature annealing. Results are presented and discussed
100 years of the physics of diodes
Zhang, Peng; Valfells, Ágúst; Ang, L. K.; Luginsland, J. W.; Lau, Y. Y.
2017-03-01
The Child-Langmuir Law (CL), discovered a century ago, gives the maximum current that can be transported across a planar diode in the steady state. As a quintessential example of the impact of space charge shielding near a charged surface, it is central to the studies of high current diodes, such as high power microwave sources, vacuum microelectronics, electron and ion sources, and high current drivers used in high energy density physics experiments. CL remains a touchstone of fundamental sheath physics, including contemporary studies of nanoscale quantum diodes and nano gap based plasmonic devices. Its solid state analog is the Mott-Gurney law, governing the maximum charge injection in solids, such as organic materials and other dielectrics, which is important to energy devices, such as solar cells and light emitting diodes. This paper reviews the important advances in the physics of diodes since the discovery of CL, including virtual cathode formation and extension of CL to multiple dimensions, to the quantum regime, and to ultrafast processes. We review the influence of magnetic fields, multiple species in bipolar flow, electromagnetic and time dependent effects in both short pulse and high frequency THz limits, and single electron regimes. Transitions from various emission mechanisms (thermionic-, field-, and photoemission) to the space charge limited state (CL) will be addressed, especially highlighting the important simulation and experimental developments in selected contemporary areas of study. We stress the fundamental physical links between the physics of beams to limiting currents in other areas, such as low temperature plasmas, laser plasmas, and space propulsion.
Compact green-diode-based lasers for biophotonic bioimaging
DEFF Research Database (Denmark)
Jensen, Ole Bjarlin; Hansen, Anders Kragh; Petersen, Paul Michael
2014-01-01
Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers.......Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers....
Design and fabrication of metal-insulator-metal diode for high frequency applications
Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias
2017-02-01
Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.
Electromagnetic particle-in-cell simulations of Applied-B proton diodes
International Nuclear Information System (INIS)
Slutz, S.A.; Seidel, D.B.; Coats, R.S.
1986-01-01
Fully electromagnetic particle-in-cell simulations of Applied-B ion diodes have been performed using the magic code. These calculations indicate that Applied-B diodes can be nearly 100% efficient. Furthermore, the simulations exhibit an impedance relaxation phenomenon due to the buildup of electron space charge near the anode which causes a time-dependent enhancement of the ion emission above the Child--Langmuir value. This phenomenon may at least partially explain the rapidly decreasing impedance that has been observed in Applied-B ion diode experiments. The results of our numerical simulations will be compared to experimental data on Applied-B ion diodes and to analytic theories of their operation
Wideband 4-diode sampling circuit
Wojtulewicz, Andrzej; Radtke, Maciej
2016-09-01
The objective of this work was to develop a wide-band sampling circuit. The device should have the ability to collect samples of a very fast signal applied to its input, strengthen it and prepare for further processing. The study emphasizes the method of sampling pulse shaping. The use of ultrafast pulse generator allows sampling signals with a wide frequency spectrum, reaching several gigahertzes. The device uses a pulse transformer to prepare symmetrical pulses. Their final shape is formed with the help of the step recovery diode, two coplanar strips and Schottky diode. Made device can be used in the sampling oscilloscope, as well as other measurement system.
Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes
Directory of Open Access Journals (Sweden)
Bisewski Damian
2016-09-01
Full Text Available This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.
A transient model of a cesium-barium diode
International Nuclear Information System (INIS)
Luke, J.R.; El-Genk, M.S.
1995-01-01
In this work a transient model of a Cs-Ba diode is developed, and a series of experiments is performed using a diode equipped with Langmuir probes. The Langmuir probe data show that the electron energy distribution is non-Maxwellian at low discharge currents, indicating the presence of an electron beam from the emitter. Experimental results also showed that the plasma properties are non-homogeneous across the 1 mm diode gap; the electron temperature and plasma potential were higher near the emitter and the plasma density was higher near the collector. Experimental evidence is presented to show that the discharge contracts to a filament below the maximum thermal emission current
Direct diode lasers and their advantages for materials processing and other applications
Fritsche, Haro; Ferrario, Fabio; Koch, Ralf; Kruschke, Bastian; Pahl, Ulrich; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang; Eibl, Florian; Kohl, Stefanie; Dobler, Michael
2015-03-01
The brightness of diode lasers is improving continuously and has recently started to approach the level of some solid state lasers. The main technology drivers over the last decade were improvements of the diode laser output power and divergence, enhanced optical stacking techniques and system design, and most recently dense spectral combining. Power densities at the work piece exceed 1 MW/cm2 with commercially available industrial focus optics. These power densities are sufficient for cutting and welding as well as ablation. Single emitter based diode laser systems further offer the advantage of fast current modulation due their lower drive current compared to diode bars. Direct diode lasers may not be able to compete with other technologies as fiber or CO2-lasers in terms of maximum power or beam quality. But diode lasers offer a range of features that are not possible to implement in a classical laser. We present an overview of those features that will make the direct diode laser a very valuable addition in the near future, especially for the materials processing market. As the brightness of diode lasers is constantly improving, BPP of less than 5mm*mrad have been reported with multikW output power. Especially single emitter-based diode lasers further offer the advantage of very fast current modulation due to their low drive current and therefore low drive voltage. State of the art diode drivers are already demonstrated with pulse durations of direct current control allows pulses of several microseconds with hundreds of watts average power. Spot sizes of less than 100 μm are obtained at the work piece. Such a diode system allows materials processing with a pulse parameter range that is hardly addressed by any other laser system. High productivity material ablation with cost effective lasers is enabled. The wide variety of wavelengths, high brightness, fast power modulation and high efficiency of diode lasers results in a strong pull of existing markets, but
Investigation of MIM Diodes for RF Applications
Khan, Adnan
2015-05-01
Metal Insulator Metal (MIM) diodes that work on fast mechanism of tunneling have been used in a number of very high frequency applications such as (Infra-Red) IR detectors and optical Rectennas for energy harvesting. Their ability to operate under zero bias condition as well as the possibility of realizing them through printing makes them attractive for (Radio Frequency) RF applications. However, MIM diodes have not been explored much for RF applications. One reason preventing their widespread RF use is the requirement of a very thin oxide layer essential for the tunneling operation that requires sophisticated nano-fabrication processes. Another issue is that the reliability and stable performance of MIM diodes is highly dependent on the surface roughness of the metallic electrodes. Finally, comprehensive RF characterization has not been performed for MIM diodes reported in the literature, particularly from the perspective of their integration with antennas as well as their rectification abilities. In this thesis, various metal deposition methods such as sputtering, electron beam evaporation, and Atomic Layer Deposition (ALD) are compared in pursuit of achieving low surface roughness. It is worth mentioning here that MIM diodes realized through ALD method have been presented for the first time in this thesis. Amorphous metal alloy have also been investigated in terms of their low surface roughness. Zinc-oxide has been investigated for its suitability as a thin dielectric layer for MIM diodes. Finally, comprehensive RF characterization of MIM diodes has been performed in two ways: 1) by standard S-parameter methods, and 2) by investigating their rectification ability under zero bias operation. It is concluded from the Atomic Force Microscopy (AFM) imaging that surface roughness as low as sub 1 nm can be achieved reliably from crystalline metals such as copper and platinum. This value is comparable to surface roughness achieved from amorphous alloys, which are non
International Nuclear Information System (INIS)
Liu Guozhi
2003-01-01
The energy spectrum of the electron beam generated by low-impedance diode and the influence of external magnetic field on the impedance of diode are studied numerically in this paper. The results show that the beam generated by the diode has an energy spread, even with constant applied voltage. Additionally, external magnetic field has great but reverse influence on the impedance of low-impedance diode, which is, according to the author's analysis, the result of the change of the electron's track due to external magnetic field. If the beam current is less than the critical one for self-pinch, the impedance will be constant with the variation of external magnetic field
Clinical experience with routine diode dosimetry for electron beam radiotherapy
International Nuclear Information System (INIS)
Yaparpalvi, Ravindra; Fontenla, Doracy P.; Vikram, Bhadrasain
2000-01-01
Purpose: Electron beam radiotherapy is frequently administered based on clinical setups without formal treatment planning. We felt, therefore, that it was important to monitor electron beam treatments by in vivo dosimetry to prevent errors in treatment delivery. In this study, we present our clinical experience with patient dose verification using electron diodes and quantitatively assess the dose perturbations caused by the diodes during electron beam radiotherapy. Methods and Materials: A commercial diode dosimeter was used for the in vivo dose measurements. During patient dosimetry, the patients were set up as usual by the therapists. Before treatment, a diode was placed on the patient's skin surface and secured with hypoallergenic tape. The patient was then treated and the diode response registered and stored in the patient radiotherapy system database via our in-house software. A customized patient in vivo dosimetry report showing patient details, expected and measured dose, and percent difference was then generated and printed for analysis and record keeping. We studied the perturbation of electron beams by diodes using film dosimetry. Beam profiles at the 90% prescription isodose depths were obtained with and without the diode on the beam central axis, for 6-20 MeV electron beams and applicator/insert sizes ranging from a 3-cm diameter circular field to a 25 x 25 cm open field. Results: In vivo dose measurements on 360 patients resulted in the following ranges of deviations from the expected dose at the various anatomic sites: Breast (222 patients) -20.3 to +23.5% (median deviation 0%); Head and Neck (63 patients) -21.5 to +14.8% (median -0.7%); Other sites (75 patients) -17.6 to +18.8% (median +0.5%). Routine diode dosimetry during the first treatment on 360 patients (460 treatment sites) resulted in 11.5% of the measurements outside our acceptable ±6% dose deviation window. Only 3.7% of the total measurements were outside ±10% dose deviation. Detailed
Testing of high current by-pass diodes for the LHC magnet quench protection
International Nuclear Information System (INIS)
Berland, V.; Hagedorn, D.; Rodriguez-Mateos, F.
1996-01-01
Within the framework of the Large Hadron Collider (LHC) R and D program, CERN is performing experiments to establish the current carrying capability of irradiated diodes at liquid Helium temperatures for the superconducting magnet protection. Even if the diodes are degraded by radiation dose and neutron fluence, they must be able to support the by-pass current during a magnet quench and the de-excitation of the superconducting magnet ring. During this discharge, the current in the diode reaches a maximum value up to 13 kA and decreased with an exponential time constant of 100 s. Two sets of 75 mm wafer diameter epitaxial diodes, one irradiated and one non-irradiated, were submitted to this experiment. The irradiated diodes have been exposed to radiation in the accelerator environment up to 20 kGy and then annealed at room temperature. After the radiation exposure the diodes had shown a degradation of forward voltage of 50% which reduced to about 14% after the thermal annealing. During the long duration high current tests, one of the diodes was destroyed and the other two irradiated diodes showed a different behavior compared with non-irradiated diodes
Transurethral vaporesection of prostate: diode laser or thulium laser?
Tan, Xinji; Zhang, Xiaobo; Li, Dongjie; Chen, Xiong; Dai, Yuanqing; Gu, Jie; Chen, Mingquan; Hu, Sheng; Bai, Yao; Ning, Yu
2018-05-01
This study compared the safety and effectiveness of the diode laser and thulium laser during prostate transurethral vaporesection for treating benign prostate hyperplasia (BPH). We retrospectively analyzed 205 patients with BPH who underwent a diode laser or thulium laser technique for prostate transurethral vaporesection from June 2016 to June 2017 and who were followed up for 3 months. Baseline characteristics of the patients, perioperative data, postoperative outcomes, and complications were compared. We also assessed the International Prostate Symptom Score (IPSS), quality of life (QoL), maximum flow rate (Q max ), average flow rate (AFR), and postvoid residual volume (PVR) at 1 and 3 months postoperatively to evaluate the functional improvement of each group. There were no significant differences between the diode laser and thulium laser groups related to age, prostate volume, operative time, postoperative hospital stays, hospitalization costs, or perioperative data. The catheterization time was 3.5 ± 0.8 days for the diode laser group and 4.7 ± 1.8 days for the thulium laser group (p diode laser and thulium laser contributes to safe, effective transurethral vaporesection in patients with symptomatic BPH. Diode laser, however, is better than thulium laser for prostate transurethral vaporesection because of its shorter catheterization time. The choice of surgical approach is more important than the choice of laser types during clinical decision making for transurethral laser prostatectomy.
Application of PIN diodes in Physics Research
International Nuclear Information System (INIS)
Ramirez-Jimenez, F. J.; Mondragon-Contreras, L.; Cruz-Estrada, P.
2006-01-01
A review of the application of PIN diodes as radiation detectors in different fields of Physics research is presented. The development and research in semiconductor technology, the use of PIN diodes in particle counting, X-and γ-ray spectroscopy, medical applications and charged particle spectroscopy are considered. Emphasis is made in the activities realized in the different research and development Mexican institutions dealing with this kind of radiation detectors
Laser semiconductor diode integrated with frequency doubler
International Nuclear Information System (INIS)
Tighineanu, I.; Dorogan, V.; Suruceanu, G.
2003-01-01
The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions
Future Solid State Lighting using LEDs and Diode Lasers
DEFF Research Database (Denmark)
Petersen, Paul Michael
2014-01-01
applications. Within the coming years, it is expected that the efficiency of blue laser diodes will approach the efficiency of infrared diode lasers. This will enable high efficiency white light generation with very high lumen per watt values. SSL today is mainly based on phosphor converted blue light emitting......Lighting accounts for 20% of all electrical energy usage. Household lighting and commercial lighting such as public and street lighting are responsible for significant greenhouse gas emissions. Therefore, currently many research initiatives focus on the development of new light sources which shows...... significant savings. Solid state lighting (SSL) based on LEDs is today the most efficient light source for generation of high quality white light. Diode lasers, however, have the potential of being more efficient than LEDs for the generation of white light. A major advantage using diode lasers for solid state...
High performance MIIM diode based on cobalt oxide/titanium oxide
Herner, S. B.; Weerakkody, A. D.; Belkadi, A.; Moddel, G.
2017-05-01
Optical rectennas for infrared energy harvesting commonly incorporate metal/double-insulator/metal diodes. Required diode characteristics include high responsivity and low resistance near zero bias with a sub-micron area, which have not been obtainable simultaneously. Diodes based on a new material set, Co/Co3O4/TiO2/Ti and an area of 0.071 μm2, provide a median maximum responsivity of 4.1 A/W, a median zero-bias responsivity of 1.2 A/W, and a median resistance of 14 kΩ. The highest performing diode has a maximum responsivity of 4.4 A/W, a zero-bias responsivity of 2.2 A/W, and a resistance of 18 kΩ.
Iodine-stabilized single-frequency green InGaN diode laser.
Chen, Yi-Hsi; Lin, Wei-Chen; Shy, Jow-Tsong; Chui, Hsiang-Chen
2018-01-01
A 520-nm InGaN diode laser can emit a milliwatt-level, single-frequency laser beam when the applied current slightly exceeds the lasing threshold. The laser frequency was less sensitive to diode temperature and could be finely tuned by adjusting the applied current. Laser frequency was stabilized onto a hyperfine component in an iodine transition through the saturated absorption spectroscopy. The uncertainty of frequency stabilization was approximately 8×10 -9 at a 10-s integration time. This compact laser system can replace the conventional green diode-pumped solid-state laser and applied as a frequency reference. A single longitudinal mode operational region with diode temperature, current, and output power was investigated.
Modeling of SVM Diode Clamping Three-Level Inverter Connected to Grid
DEFF Research Database (Denmark)
Guo, Yougui; Zeng, Ping; Zhu, Jieqiong
2011-01-01
PLECS is used to model the diode clamping three-level inverter connected to grid and good results are obtained. First the output voltage SVM is described for diode clamping three-level inverter with loads connected to Y. Then the output voltage SVM of diode clamping three-level inverter is simply...... analyzed with loads connected to △. But it will be further researched in the future. Third, PLECS is briefly introduced. Fourth, the modeling of diode clamping three-level inverter is briefly presented with PLECS. Finally, a series of simulations are carried out. The simulation results tell us PLECS...... is very powerful tool to real power circuits and it is very easy to simulate them. They have also verified that SVM control strategy is feasible to control the diode clamping three-level inverter....
Protection Scheme for Modular Multilevel Converters under Diode Open-Circuit Faults
DEFF Research Database (Denmark)
Deng, Fujin; Zhu, Rongwu; Liu, Dong
2018-01-01
devices. The diode open-circuit fault in the submodule (SM) is an important issue for the MMC, which would affect the performance of the MMC and disrupt the operation of the MMC. This paper analyzes the impact of diode open-circuit failures in the SMs on the performance of the MMC and proposes...... a protection scheme for the MMC under diode open-circuit faults. The proposed protection scheme not only can effectively eliminate the possible caused high voltage due to the diode open-circuit fault but also can quickly detect the faulty SMs, which effectively avoids the destruction and protects the MMC....... The proposed protection scheme is verified with a downscale MMC prototype in the laboratory. The results confirm the effectiveness of the proposed protection scheme for the MMC under diode open-circuit faults....
Suitability of integrated protection diodes from diverse semiconductor technologies
van Wanum, Maurice; Lebouille, Tom; Visser, Guido; van Vliet, Frank Edward
2009-01-01
Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are
Planar transistors and impatt diodes with ion implantation
International Nuclear Information System (INIS)
Dorendorf, H.; Glawischnig, H.; Grasser, L.; Hammerschmitt, J.
1975-03-01
Low frequency planar npn and pnp transistors have been developed in which the base and emitter have been fabricated using ion implantation of boron and phosphorus by a drive-in diffusion. Electrical parameters of the transistors are comparable with conventionally produced transistors; the noise figure was improved and production tolerances were significantly reduced. Silicon-impatt diodes for the microwave range were also fabricated with implanted pn junctions and tested for their high frequency characteristics. These diodes, made in an improved upside down technology, delivered output power up to 40 mW (burn out power) at 30 GHz. Reverse leakage current and current carrying capability of these diodes were comparable to diffused structures. (orig.) 891 ORU 892 MB [de
Energy Technology Data Exchange (ETDEWEB)
Charles, P. H., E-mail: paulcharles111@gmail.com [Department of Radiation Oncology, Princess Alexandra Hospital, Ipswich Road, Woolloongabba, Brisbane, Queensland 4102, Australia and School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, GPO Box 2434, Brisbane, Queensland 4001 (Australia); Cranmer-Sargison, G. [Department of Medical Physics, Saskatchewan Cancer Agency, 20 Campus Drive, Saskatoon, Saskatchewan S7L 3P6, Canada and College of Medicine, University of Saskatchewan, 107 Wiggins Road, Saskatoon, Saskatchewan S7N 5E5 (Canada); Thwaites, D. I. [Institute of Medical Physics, School of Physics, University of Sydney, New South Wales 2006 (Australia); Kairn, T. [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, GPO Box 2434, Brisbane, Queensland 4001, Australia and Genesis CancerCare Queensland, The Wesley Medical Centre, Suite 1, 40 Chasely Street, Auchenflower, Brisbane, Queensland 4066 (Australia); Crowe, S. B.; Langton, C. M.; Trapp, J. V. [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, GPO Box 2434, Brisbane, Queensland 4001 (Australia); Pedrazzini, G. [Genesis CancerCare Queensland, The Wesley Medical Centre, Suite 1, 40 Chasely Street, Auchenflower, Brisbane, Queensland 4066 (Australia); Aland, T.; Kenny, J. [Epworth Radiation Oncology, 89 Bridge Road, Richmond, Melbourne, Victoria 3121 (Australia)
2014-10-15
Purpose: Two diodes which do not require correction factors for small field relative output measurements are designed and validated using experimental methodology. This was achieved by adding an air layer above the active volume of the diode detectors, which canceled out the increase in response of the diodes in small fields relative to standard field sizes. Methods: Due to the increased density of silicon and other components within a diode, additional electrons are created. In very small fields, a very small air gap acts as an effective filter of electrons with a high angle of incidence. The aim was to design a diode that balanced these perturbations to give a response similar to a water-only geometry. Three thicknesses of air were placed at the proximal end of a PTW 60017 electron diode (PTWe) using an adjustable “air cap”. A set of output ratios (OR{sub Det}{sup f{sub c}{sub l}{sub i}{sub n}}) for square field sizes of side length down to 5 mm was measured using each air thickness and compared to OR{sub Det}{sup f{sub c}{sub l}{sub i}{sub n}} measured using an IBA stereotactic field diode (SFD). k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} was transferred from the SFD to the PTWe diode and plotted as a function of air gap thickness for each field size. This enabled the optimal air gap thickness to be obtained by observing which thickness of air was required such that k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} was equal to 1.00 at all field sizes. A similar procedure was used to find the optimal air thickness required to make a modified Sun Nuclear EDGE detector (EDGEe) which is “correction-free” in small field relative dosimetry. In addition, the feasibility of experimentally transferring k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r
Intense pulsed light-ion beam generated by planar type self-magnetically insulated diode
International Nuclear Information System (INIS)
Yoshikawa, T.; Masugata, K.; Ito, M.; Matsui, M.; Yatsui, K.
1984-01-01
New type of ion diode named ''Planar Type Self-Magnetically Insulated Diode'' (PSID) has been developed. By using a 1.5-mm-thick-polyethylene sheet as an anode surface, we have obtained Vsub(d) (diode voltage) -- 886 kV, Isub(d) (diode current) -- 180 kA, and Isub(i) (net ion current) -- 52 kA, yielding the diode efficiency of ion production to be -- 30 %. Multiple-shots operation (more than 40 shots) has been possible with good reproducibility in such a relatively high powers above. (author)
In vivo dosimetry with silicon diodes in total body irradiation
International Nuclear Information System (INIS)
Oliveira, F.F.; Amaral, L.L.; Costa, A.M.; Netto, T.G.
2014-01-01
The aim of this work is the characterization and application of silicon diode detectors for in vivo dosimetry in total body irradiation (TBI) treatments. It was evaluated the diode response with temperature, dose rate, gantry angulations and field size. A maximum response variation of 2.2% was obtained for temperature dependence. The response variation for dose rate and angular was within 1.2%. For field size dependence, the detector response increased with field until reach a saturation region, where no more primary radiation beam contributes for dose. The calibration was performed in a TBI setup. Different lateral thicknesses from one patient were simulated and then the calibration factors were determined by means of maximum depth dose readings. Subsequent to calibration, in vivo dosimetry measurements were performed. The response difference between diode readings and the prescribed dose for all treatments was below 4%. This difference is in agreement as recommended by the International Commission on Radiation Units and Measurements (ICRU), which is ±5%. The present work to test the applicability of a silicon diode dosimetry system for performing in vivo dose measurements in TBI techniques presented good results. These measurements demonstrated the value of diode dosimetry as a treatment verification method and its applicability as a part of a quality assurance program in TBI treatments. - Highlights: ► Characterization of a silicon diode dosimetry system. ► Application of the diodes for in vivo dosimetry in total body irradiation treatments. ► Implementation of in vivo dosimetry as a part of a quality assurance program in radiotherapy
Direct-current polarization characteristics of various AlGaAs laser diodes
Fuhr, P. L.
1984-01-01
Polarization characteristics of AlGaAs laser diodes having various device geometries have been measured. Measurements were performed with the laser diodes operating under dc conditions. Results show that laser diodes having different device geometries have optical outputs that exhibit varying degrees of polarization purity. Implications of this result, with respect to incoherent polarization-beam combining, are addressed.
Characterization of High-power Quasi-cw Laser Diode Arrays
Stephen, Mark A.; Vasilyev, Aleksey; Troupaki, Elisavet; Allan, Graham R.; Kashem, Nasir B.
2005-01-01
NASA s requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance and comprehensive characterization data of Quasi-CW, High-power, laser diode arrays is presented.
V-shaped resonators for addition of broad-area laser diode arrays
Liu, Bo; Liu, Yun; Braiman, Yehuda Y.
2012-12-25
A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.
Tunable high-power narrow-linewidth green external-cavity GaN diode laser
DEFF Research Database (Denmark)
Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael
2016-01-01
A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system.......A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system....
Investigation on a radiation tolerant betavoltaic battery based on Schottky barrier diode
International Nuclear Information System (INIS)
Liu Yebing; Hu Rui; Yang Yuqing; Wang Guanquan; Luo Shunzhong; Liu Ning
2012-01-01
An Au–Si Schottky barrier diode was studied as the energy conversion device of betavoltaic batteries. Its electrical performance under radiation of Ni-63 and H-3 sources and radiation degradation under Am-241 were investigated and compared with those of the p–n junction. The results show that the Schottky diode had a higher I sc and harder radiation tolerance but lower V oc than the p–n junction. The results indicated that the Schottky diode can be a promising candidate for energy conversion of betavoltaic batteries. - Highlights: ► The Schottky diode was used as the converter of the betavoltaic battery. ► The radiation damage of converter was accelerated by using alpha particles. ► The Schottky diode has higher radiation resistance than that of the p–n junction. ► The Schottky diode could still be a promising converter of the betavoltaic battery.
Simplified atom trap using a single microwave modulated diode laser
International Nuclear Information System (INIS)
Newbury, N.R.; Myatt, C.J.; Wieman, C.E.
1993-01-01
We have demonstrated microwave modulation of a diode laser which is operated with optical feedback from a diffraction grating. By directly modulating the diode laser current at frequencies up to 6.8 GHz, we observed 2-30% of the laser power in a single sideband for 20mW of microwave power. Using such a diode laser modulated at 6.6GHz, we have trapped 87 Rb in a vapor cell. With 10mW of microwave power, the number of trapped atoms was only 15% smaller than the number obtained using two lasers in the conventional manner. A microwave modulated diode laser should also be useful for driving stimulated Raman transitions between the hyperfine levels of Rb or Cs
A Measurement of the Parity Violating Parameter Ab with a Muon Tag at the SLD
Energy Technology Data Exchange (ETDEWEB)
Bellodi, Giulia
2001-02-12
We present a direct measurement of the parity violation parameter A{sub b}, derived from the left-right forward-backward asymmetry of b quarks tagged via muons from semileptonic decays. The value of A{sub b} is extracted using a maximum likelihood fit to the differential cross section for fermion production. The novelty of this measurement consists in the use of topological vertexing information alongside the more traditional decay kinematics to discriminate among the different sources of tagged leptons. The small and stable SLC beam spot and the CCD based vertex detector are used to reconstruct secondary decay vertices and to provide precise kinematic information and a highly efficient and pure B mass tag. A multivariate approach has been used, with a total of 4 tagging variables, whose correlation with each other has been taken into account. The final result has been cross-checked both with a classical cut-and-count method and combining all the information into a neural net. Based on the full SLD dataset of 550K Z{sup 0} events with highly polarized electron beams, this measurement represents an improvement of a factor of 2 with respect to the previously published result (1993-1995 only and with no vertexing information). The statistical sensitivity achieved is around 4% for A{sub b}, making this a world-class single measurement. An estimate of A{sub c} has been simultaneously derived from a common fit, with a precision of about 10%.
Gamma and electron high dose dosimetry with rad-hard Si diodes
International Nuclear Information System (INIS)
Pascoalino, Kelly Cristina da Silva
2014-01-01
In this work the main dosimetric characteristics of rad-hard Float Zone (FZ) and magnetic Czochralski (MCz) diodes to electrons (1.5 MeV) and gamma ( 60 Co) radiation are evaluated. The dosimetric system proposed is based on electrical current measurements due to radiation interactions on the devices. The batch response uniformity was studied for the n-type FZ diodes irradiated with gamma rays. The coefficient of variation of the current measurement was about 1.25% at 5 kGy of accumulated dose. A sensitivity decrease with the increase of the accumulated dose (Total Ionizing Dose - TID) was observed for both FZ and MCz diodes. For gamma irradiation, these effect is more pronounced for n-type or smaller resistivity diodes. Two types of dosimetric probe were used on the electron irradiation procedures, one of them specially designed to avoid the deterioration of the electrical contacts and the diodes metallization. The sensitivity of the preirradiated FZ and MCz diodes fell about 10% and 40%, respectively, during electron irradiation at 1.25 MGy of accumulated dose. The effect of electron radiation damage on the electrical properties of the diodes was studied by the means of leakage current and capacitance measurements as a function of bias voltage. The leakage current increases with the accumulated dose but does not contributes significantly to the current signal, since the diodes are operated in photovoltaic mode, without bias voltage. For the MCz diode no change in the full depletion voltage was observed, which indicates its higher tolerance to radiation-induced damage, as expected. During electron irradiation the temperature increases and in order to determine its influence for the current signals, the leakage current values were extrapolated up to 35 °C. The contribution does not exceed 0.1% for FZ and MCz diodes. The effect of the radiation type, electrons or gamma rays, on the pre dose procedures was analyzed for the FZ n-type device and was observed that the
DFB laser diodes for sensing applications using photoacoustic spectroscopy
International Nuclear Information System (INIS)
Koeth, J; Fischer, M; Legge, M; Seufert, J; Roessner, K; Groninga, H
2010-01-01
We present typical device characteristics of novel DFB laser diodes which are employed in various sensing applications including high resolution photoacoustic spectroscopy. The laser diodes discussed are based on a genuine fabrication technology which allows for the production of ultra stable devices within a broad spectral range from 760 nm up to 3000 nm wavelength. The devices exhibit narrow linewidths down to <1 MHz which makes them ideally suited for all photoacoustic sensing applications where a high spectral purity is required. As an example we will focus on a typical medical application where these diodes are used for breath analysis using photoacoustic spectroscopy.
Simulated electron affinity tuning in metal-insulator-metal (MIM) diodes
Mistry, Kissan; Yavuz, Mustafa; Musselman, Kevin P.
2017-05-01
Metal-insulator-metal diodes for rectification applications must exhibit high asymmetry, nonlinearity, and responsivity. Traditional methods of improving these figures of merit have consisted of increasing insulator thickness, adding multiple insulator layers, and utilizing a variety of metal contact combinations. However, these methods have come with the price of increasing the diode resistance and ultimately limiting the operating frequency to well below the terahertz regime. In this work, an Airy Function Transfer Matrix simulation method was used to observe the effect of tuning the electron affinity of the insulator as a technique to decrease the diode resistance. It was shown that a small increase in electron affinity can result in a resistance decrease in upwards of five orders of magnitude, corresponding to an increase in operating frequency on the same order. Electron affinity tuning has a minimal effect on the diode figures of merit, where asymmetry improves or remains unaffected and slight decreases in nonlinearity and responsivity are likely to be greatly outweighed by the improved operating frequency of the diode.
Diode lasers and their applications in spectrometry
International Nuclear Information System (INIS)
Pavone, F.S.
1997-01-01
The impact of semiconductor diode laser in different fields ranging from communications to spectroscopy is becoming huge and pushes the research into developing sources satisfying the different requirements. For applications related to trace gas detection, the low amplitude noise in the light source of semiconductor diode laser is sufficient to obtain interesting results. Trace gas of molecular species as methane is interesting for different reason: it plays an important role in both radiative transport an photochemistry in the atmosphere
Zener Diode Compact Model Parameter Extraction Using Xyce-Dakota Optimization.
Energy Technology Data Exchange (ETDEWEB)
Buchheit, Thomas E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wilcox, Ian Zachary [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandoval, Andrew J [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Reza, Shahed [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
2017-12-01
This report presents a detailed process for compact model parameter extraction for DC circuit Zener diodes. Following the traditional approach of Zener diode parameter extraction, circuit model representation is defined and then used to capture the different operational regions of a real diode's electrical behavior. The circuit model contains 9 parameters represented by resistors and characteristic diodes as circuit model elements. The process of initial parameter extraction, the identification of parameter values for the circuit model elements, is presented in a way that isolates the dependencies between certain electrical parameters and highlights both the empirical nature of the extraction and portions of the real diode physical behavior which of the parameters are intended to represent. Optimization of the parameters, a necessary part of a robost parameter extraction process, is demonstrated using a 'Xyce-Dakota' workflow, discussed in more detail in the report. Among other realizations during this systematic approach of electrical model parameter extraction, non-physical solutions are possible and can be difficult to avoid because of the interdependencies between the different parameters. The process steps described are fairly general and can be leveraged for other types of semiconductor device model extractions. Also included in the report are recommendations for experiment setups for generating optimum dataset for model extraction and the Parameter Identification and Ranking Table (PIRT) for Zener diodes.
Development and testing of immersed-Bz diodes with cryogenic anodes
International Nuclear Information System (INIS)
Bruner, Nichelle Lee; Cordova, Steve Ray; Oliver, Bryan Velten; Portillo, Salvador; Cooper, Graham; Puetz, Elizabeth A.; Johnston, Mark D.; Hahn, Kelly Denise; McLean, John; Molina, Isidro; Droemer, Darryl W.; Welch, Dale R.; Rovang, Dean Curtis; Van De Valde, David M.; Gregerson, Darryl; Maenchen, John Eric; O'Malley, John
2005-01-01
Sandia National Laboratories is investigating and developing high-dose, high-brightness flash radiographic sources. The immersed-B z diode employs large-bore, high-field solenoid magnets to help guide and confine an intense electron beam from a needle-like cathode 'immersed' in the axial field of the magnet. The electron beam is focused onto a high-atomic-number target/anode to generate an intense source of bremsstrahlung X-rays. Historically, these diodes have been unable to achieve high dose (> 500 rad (at) m) from a small spot (< 3 mm diameter). It is believed that this limitation is due in part to undesirable effects associated with the interaction of the electron beam with plasmas formed at either the anode or the cathode. Previous research concentrated on characterizing the behavior of diodes, which used untreated, room temperature (RT) anodes. Research is now focused on improving the diode performance by modifying the diode behavior by using cryogenic anodes that are coated in-situ with frozen gases. The objective of these cryogenically treated anodes is to control and limit the ion species of the anode plasma formed and hence the species of the counter-streaming ions that can interact with the electron beam. Recent progress in the development, testing and fielding of the cryogenically cooled immersed diodes at Sandia is described.
Thermal diode made by nematic liquid crystal
Energy Technology Data Exchange (ETDEWEB)
Melo, Djair, E-mail: djfmelo@gmail.com [Instituto de Física, Universidade Federal de Alagoas, Av. Lourival Melo Mota, s/n, 57072-900 Maceió, AL (Brazil); Fernandes, Ivna [Instituto de Física, Universidade Federal de Alagoas, Av. Lourival Melo Mota, s/n, 57072-900 Maceió, AL (Brazil); Moraes, Fernando [Departamento de Física, CCEN, Universidade Federal da Paraíba, Caixa Postal 5008, 58051-900, João Pessoa, PB (Brazil); Departamento de Física, Universidade Federal Rural de Pernambuco, 52171-900 Recife, PE (Brazil); Fumeron, Sébastien [Institut Jean Lamour, Université de Lorraine, BP 239, Boulevard des Aiguillettes, 54506 Vandoeuvre les Nancy (France); Pereira, Erms [Escola Politécnica de Pernambuco, Universidade de Pernambuco, Rua Benfíca, 455, Madalena, 50720-001 Recife, PE (Brazil)
2016-09-07
This work investigates how a thermal diode can be designed from a nematic liquid crystal confined inside a cylindrical capillary. In the case of homeotropic anchoring, a defect structure called escaped radial disclination arises. The asymmetry of such structure causes thermal rectification rates up to 3.5% at room temperature, comparable to thermal diodes made from carbon nanotubes. Sensitivity of the system with respect to the heat power supply, the geometry of the capillary tube and the molecular anchoring angle is also discussed. - Highlights: • An escaped radial disclination as a thermal diode made by a nematic liquid crystal. • Rectifying effects comparable to those caused by carbon and boron nitride nanotubes. • Thermal rectification increasing with radius and decreasing with height of the tube. • Asymmetric BCs cause rectification from the spatial asymmetry produced by the escape. • Symmetric BCs provide rectifications smaller than those yields by asymmetric BCs.
Maximum time-dependent space-charge limited diode currents
Energy Technology Data Exchange (ETDEWEB)
Griswold, M. E. [Tri Alpha Energy, Inc., Rancho Santa Margarita, California 92688 (United States); Fisch, N. J. [Princeton Plasma Physics Laboratory, Princeton University, Princeton, New Jersey 08543 (United States)
2016-01-15
Recent papers claim that a one dimensional (1D) diode with a time-varying voltage drop can transmit current densities that exceed the Child-Langmuir (CL) limit on average, apparently contradicting a previous conjecture that there is a hard limit on the average current density across any 1D diode, as t → ∞, that is equal to the CL limit. However, these claims rest on a different definition of the CL limit, namely, a comparison between the time-averaged diode current and the adiabatic average of the expression for the stationary CL limit. If the current were considered as a function of the maximum applied voltage, rather than the average applied voltage, then the original conjecture would not have been refuted.
An all-silicon passive optical diode.
Fan, Li; Wang, Jian; Varghese, Leo T; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M; Qi, Minghao
2012-01-27
A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.
The electron irradiation effects in different structures of diodes
International Nuclear Information System (INIS)
Li Quanfen; Wang Jiaxu
1993-01-01
This paper describes the different electron irradiation effects in different structures of diodes and the different results produced by different irradiation ways. From this work, we can know how to choose proper manufacture arts and comprehensive factors according to the structures of diodes and the irradiation conditions
The danger of semiconductor laser diode radiation to the human eye
International Nuclear Information System (INIS)
Nier, J.
1977-01-01
The UVV 'Laserstrahlen' (laser beam regulation) sets maximum permissible values for radiation exposure that must not be exceeded on the cornea or skin (wavelength range 200 to 1400nm; cornea values: Normal pulsed operation 5 x 10 -7 Ws/cm 2 , continuous operation (>0.1s)5 x 10 -6 W/cm 2 ). Especially laser diodes emitting in the near infrared invite careless handling, of which this paper warns by a detailed illustration of the danger involved and by numerical examples. Data are given on two commercial laser diodes, a continuous operation diode (continuous power 5mW) and a pulse diode (peak pwer 1W, pulse duration 0.2μs), as well as data on aperture angles and geometrical dimensions. Critical cornea and skin distances are distinguished below which the exposure of cornea and skin in the axis of the emission beam is dangerous. For the unfavourable conditions of focussing with a lens (f = 4cm), the following critical cornea distances are obtained: Continuous diode 2.5 km; pulse diode 23.5m. Calculation formulas for special cases are given. (orig.) 891 MG [de
Controlling the emission wavelength in group III-V semiconductor laser diodes
Ooi, Boon S.
2016-12-29
Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.
Pseudo-diode based on protonic/electronic hybrid oxide transistor
Fu, Yang Ming; Liu, Yang Hui; Zhu, Li Qiang; Xiao, Hui; Song, An Ran
2018-01-01
Current rectification behavior has been proved to be essential in modern electronics. Here, a pseudo-diode is proposed based on protonic/electronic hybrid indium-gallium-zinc oxide electric-double-layer (EDL) transistor. The oxide EDL transistors are fabricated by using phosphorous silicate glass (PSG) based proton conducting electrolyte as gate dielectric. A diode operation mode is established on the transistor, originating from field configurable proton fluxes within the PSG electrolyte. Current rectification ratios have been modulated to values ranged between ˜4 and ˜50 000 with gate electrode biased at voltages ranged between -0.7 V and 0.1 V. Interestingly, the proposed pseudo-diode also exhibits field reconfigurable threshold voltages. When the gate is biased at -0.5 V and 0.3 V, threshold voltages are set to ˜-1.3 V and -0.55 V, respectively. The proposed pseudo-diode may find potential applications in brain-inspired platforms and low-power portable systems.
Thermal sensor based zinc oxide diode for low temperature applications
Energy Technology Data Exchange (ETDEWEB)
Ocaya, R.O. [Department of Physics, University of the Free State (South Africa); Al-Ghamdi, Ahmed [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589 (Saudi Arabia); El-Tantawy, F. [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt); Center of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Farooq, W.A. [Department of Physics and Astronomy, College of Science, King Saud University, Riyadh (Saudi Arabia); Yakuphanoglu, F., E-mail: fyhan@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589 (Saudi Arabia); Department of Physics, Faculty of Science, Firat University, Elazig, 23169 (Turkey)
2016-07-25
The device parameters of Al/p-Si/Zn{sub 1-x}Al{sub x}O-NiO/Al Schottky diode for x = 0.005 were investigated over the 50 K–400 K temperature range using direct current–voltage (I–V) and impedance spectroscopy. The films were prepared using the sol–gel method followed by spin-coating on p-Si substrate. The ideality factor, barrier height, resistance and capacitance of the diode were found to depend on temperature. The calculated barrier height has a mean. Capacitance–voltage (C–V) measurements show that the capacitance decreases with increasing frequency, suggesting a continuous distribution of interface states over the surveyed 100 kHz to 1 MHz frequency range. The interface state densities, N{sub ss}, of the diode were calculated and found to peak as functions of bias and temperature in two temperature regions of 50 K–300 K and 300 K–400 K. A peak value of approximately 10{sup 12}/eV cm{sup 2} was observed around 0.7 V bias for 350 K and at 3 × 10{sup 12}/eVcm{sup 2} around 2.2 V bias for 300 K. The relaxation time was found to average 4.7 μs over all the temperatures, but showing its lowest value of 1.58 μs at 300 K. It is seen that the interface states of the diode is controlled by the temperature. This suggests that Al/p-Si/Zn1-xAlxO-NiO/Al diode can be used as a thermal sensors for low temperature applications. - Highlights: • Al/pSi/Zn1-xAlxO-NiO/Al Schottky diode was fabricated by sol gel method. • The interface state density of the diode is controlled by the temperature. • Zinc oxide based diode can be used as a thermal sensor for low temperature applications.
Popp, A.; Wendel, M.; Knels, L.; Knuschke, P.; Mehner, M.; Koch, T.; Boller, D.; Koch, P.; Koch, E.
2005-08-01
A compact common path Fourier domain optical coherence tomography (FD-OCT) system based on a broadband superluminescence diode is used for biomedical imaging. The epidermal thickening of human skin after exposure to ultraviolet radiation is measured to proof the feasibility of FD-OCT for future substitution of invasive biopsies in a long term study on natural UV skin protection. The FD-OCT system is also used for imaging lung parenchyma. FD-OCT images of a formalin fixated lung show the same alveolar structure as scanning electron microscopy images. In the ventilated and blood-free perfused isolated rabbit lung FD-OCT is used for real-time cross-sectional image capture of alveolar mechanics throughout tidal ventilation. The alveolar mechanics changing from alternating recruitment-derecruitment at zero positive end-expiratory pressure (PEEP) to persistent recruitment after applying a PEEP of 5 cm H2O is observed in the OCT images.
DEFF Research Database (Denmark)
Fercher, A.F.; Andersen, Peter E.
2017-01-01
Optical coherence tomography (OCT) is a technique that is used to peer inside a body noninvasively. Tissue structure defined by tissue absorption and scattering coefficients, and the speed of blood flow, are derived from the characteristics of light remitted by the body. Singly backscattered light...... detected by partial coherence interferometry (PCI) is used to synthesize the tomographic image coded in false colors. A prerequisite of this technique is a low time-coherent but high space-coherent light source, for example, a superluminescent diode or a supercontinuum source. Alternatively, the imaging...... technique can be realized by using ultrafast wavelength scanning light sources. For tissue imaging, the light source wavelengths are restricted to the red and near-infrared (NIR) region from about 600 to 1300 nm, the so-called therapeutic window, where absorption (μa ≈ 0.01 mm−1) is small enough. Transverse...
A new fabrication technique for back-to-back varactor diodes
Smith, R. Peter; Choudhury, Debabani; Martin, Suzanne; Frerking, Margaret A.; Liu, John K.; Grunthaner, Frank A.
1992-01-01
A new varactor diode process has been developed in which much of the processing is done from the back of an extremely thin semiconductor wafer laminated to a low-dielectric substrate. Back-to-back BNN diodes were fabricated with this technique; excellent DC and low-frequency capacitance measurements were obtained. Advantages of the new technique relative to other techniques include greatly reduced frontside wafer damage from exposure to process chemicals, improved capability to integrate devices (e.g. for antenna patterns, transmission lines, or wafer-scale grids), and higher line yield. BNN diodes fabricated with this technique exhibit approximately the expected capacitance-voltage characteristics while showing leakage currents under 10 mA at voltages three times that needed to deplete the varactor. This leakage is many orders of magnitude better than comparable Schottky diodes.
Dosimetric properties characterization of silicon diodes used in photon beam radiotherapy
International Nuclear Information System (INIS)
Bizetto, Cesar Augusto
2013-01-01
In the current work it was studied the performance of epitaxial (EPI) and float zone (FZ) silicon diodes as on-line dosimeters for megavoltage (EPI diode) and orthovoltage (EPI and FZ diode) photon beam radiotherapy. In order to be used as dosimeters the diodes were enclosed in black polymethylmethacrylate (PMMA) probes. The devices were then connected, on photovoltaic mode, to an electrometer Keithley® 6517B to allow measurements of the photocurrent. The irradiations were performed with 6 and 18 MV photon beams (Siemens Primus® linear accelerator), 6 and 15 MV (Novalis TX®) and 10, 25, 30 and 50 kV of a Pantak / Seifert X ray radiation device. During the measurements with the Siemens Primus the diodes were held between PMMA plates placed at 10.0 cm depth. When using Novalis TX® the devices were held between solid water plates placed at 50 cm depth. In both cases the diodes were centered in a radiation field of 10 x 10 cm 2 , with the source-to-surface distance (SSD) kept at 100 cm. In measurements with orthovoltage photon beams the diodes were placed 50.0 cm from the tube in a radiation field of 8 cm diameter. The dose-rate dependency was studied for 6 and 15 MV (varying the dose-rate from 100 to 600 monitor units per minute) and for the 50 kV beam by varying the current tube from 2 to 20 mA. All devices showed linear response with dose rate and, within uncertainties the charge collected is independent of dose rate. The current signals induced showed good instantaneous repeatability of the diodes, characterized by coefficients of variation of current (CV) smaller than 1.14% (megavoltage beams) and 0.15% for orthovoltage beams and coefficients of variation of charge (CV) smaller than 1.84% (megavoltage beams) and 1.67% (orthovoltage beams). The dose response curves were quite linear with linear correlation coefficients better than 0.9999 for all diodes. (author)
Foil-less plasma-filled diode for HPM generator
International Nuclear Information System (INIS)
Eltchaninov, A A; Kovalchuk, B M; Kurkan, I K; Zherlitsyn, A A
2014-01-01
Plasma-filled diode regarded as perspective source of electron beam feeding HPM generator of GW power level, comparing to conventional explosive emission vacuum diode. Electron beam generation occurs in plasma double layer, where plasma boundary plays as an anode. It allows cancelling the usage of anode foils or grids in HPM generators with the virtual cathode, which could limit its life time to few shots. The presence of ions in the e-beam drift space could raise the limiting current for a drift space, but it could affect to microwave generation also. Sectioned plasma-filled diode with beam current of about 100 kA, electron beam energy of about 0.5 MV and beam current density of 1-10 kA/cm 2 was realized. Cylindrical transport channel with the diameter of 200 mm and the length of about 30 cm was attached to the diode. Beam current measurements in a drift space were performed. Computer simulations of electron beam transport with the presence of ions were carried out with the 2.5D axisymmetric version of PiC-code KARAT. Obtained results would help optimizing electrodynamic system of HPM generator subjected to the presence of ions
Thermometric Property of a Diode.
Inman, Fred W.; Woodruff, Dan
1995-01-01
Presents a simple way to implement the thermometric property of a semiconductor diode to produce a thermometer with a nearly linear dependence upon temperature over a wide range of temperatures. (JRH)
Electrically driven surface plasmon light-emitting diodes
DEFF Research Database (Denmark)
Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke
We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....
Pulse power applications of silicon diodes in EML capacitive pulsers
Dethlefsen, Rolf; McNab, Ian; Dobbie, Clyde; Bernhardt, Tom; Puterbaugh, Robert; Levine, Frank; Coradeschi, Tom; Rinaldi, Vito
1993-01-01
Crowbar diodes are used for increasing the energy transfer from capacitive pulse forming networks. They also prevent voltage reversal on the energy storage capacitors. 52 mm diameter diodes with a 5 kV reverse blocking voltage, rated 40 kA were successfully used for the 32 MJ SSG rail gun. An uprated diode with increased current capability and a 15 kV reverse blocking voltage has been developed. Transient thermal analysis has predicted the current ratings for different pulse length. Analysis verification is obtained from destructive testing.
Study of PIN diode energy traps created by neutrons
International Nuclear Information System (INIS)
Sopko, V; Dammer, J; Sopko, B; Chren, D
2013-01-01
Characterization of radiation defects is still ongoing and finds greater application in the increasing radiation doses on semiconductor detectors in experiments. Studying the changes of silicon PIN diode for high doses of radiation is the fundamental motivation for our measurements. In this article we describe the behavior of the PIN diode and development of the disorder caused by neutrons from a 252Cf and doses up to 8 Gy. The calibration curve for PIN diode shows the effect of disorders as the changes of the voltampere characteristics depending on the dose of neutron irradiation. The measured values for defects are in good agreement with created energy traps.
Electron collector and ion species experiments on the LION extractor ion diode
International Nuclear Information System (INIS)
Rondeau, G.; Greenly, J.B.; Hammer, D.A.; Horioka, K.; Meyerhofer, D.D.
1987-01-01
Studies of the effects of an electron collector on the electron flow in an ion diode and on diode impedance history are being done with an extractor geometry ion diode (B/sub r/ magnetic insulation field) on the LION accelerator (1.5 MV, 4Ω, 40 ns). The collector is a flux-penetrable metal protrusion on the inner radius of the anode that collects electrons. This device increases the diode operating impedance particularly during the later part of the pulse when the diode impedance collapses without the collector. In the present set of experiments, several thin wires are inserted into the anode and allowed to protrude a few millimeters into the A-K gap. These wires are damaged by the electron flow during the pulse and by measuring the length of the remaining wire, the distance of the electron layer from the anode can be inferred. The ion current density is also measured in three radial locations across the diode, giving a measure, through the Child-Langmuir law, of the effective gap spacing between the anode and the electron sheath. A simple model is proposed to account for the scaling of ion current density with the diode voltage observed in the experiment
Spherical distribution structure of the semiconductor laser diode stack for pumping
International Nuclear Information System (INIS)
Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei
2011-01-01
A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)
In Vivo Diode Dosimetry for Imrt Treatments Generated by Pinnacle Treatment Planning System
International Nuclear Information System (INIS)
Alaei, Parham; Higgins, Patrick D.; Gerbi, Bruce J.
2009-01-01
Dose verification using diodes has been proposed and used for intensity modulated radiation therapy (IMRT) treatments. We have previously evaluated diode response for IMRT deliveries planned with the Eclipse/Helios treatment planning system. The Pinnacle treatment planning system generates plans that are delivered in a different fashion than Eclipse. Whereas the Eclipse-generated segments are delivered in organized progression from one side of each field to the other, Pinnacle-generated segments are delivered in a much more randomized fashion to different areas within the field. This makes diode measurements at a point more challenging because the diode may be exposed fully or partially to multiple small segments during one single field's treatment as opposed to being exposed to very few segments scanning across the diode during an Eclipse-generated delivery. We have evaluated in vivo dosimetry for Pinnacle-generated IMRT plans and characterized the response of the diode to various size segments on phantom. We present results of patient measurements on approximately 300 fields, which show that 76% of measurements agree to within 10% of the treatment-plan generated calculated doses. Of the other 24%, about 11% are within 15% of the calculated dose. Comparison of these with phantom measurements indicates that many of the discrepancies are due to diode positioning on patients and increased diode response at short source-to-surface distances (SSDs), with the remainder attributable to other factors such as segment size and partial irradiation of the diode
International Nuclear Information System (INIS)
Mizuno, K.; Ono, S.; Suzuki, T.; Daiku, Y.
1982-01-01
Schottky diode detectors are widely used as fast, sensitive submillimeter detectors in plasma physics, radio astronomy, frequency standards and so on. In this paper, the research on submillimeter Schottky diodes at Tohoku University is described. A brief description is given on the theoretical examination of diode parameters for video detection in design and on the fabrication of n/n + GaAs Schottky diode chips. Antennas for Schottky barrier diodes are discussed. Three types of antenna structures have been proposed, and used for whisker-contacted Schottky diodes so far. These are compared with each other for their frequency response and gain. The bicone type antenna is promising because of its larger frequency response, but the optimum design for this type of antenna has not yet sufficiently been obtained. As the application of Schottky barrier diodes, the intensity modulation of submillimeter laser and a quasi-optically coupled harmonic mixer have been studied. The modulation degree of about 4 % for HCN laser output has been so far obtained at the maximum modulation frequency of 2 GHz. Since 1976, a quasi-optically coupled harmonic mixer has been used with a Schottky diode in harmonic mixing between microwaves, millimeter waves, and submillimeter waves. (Wakatsuki, Y.)
Investigation of thermometrical characteristics of p+–n-GaP diodes
Directory of Open Access Journals (Sweden)
Sypko N. I.
2008-12-01
Full Text Available The method of reception of p+–n-diode epitaxial structures of GaP from liquid phase is developed. In the temperature range of 80—520 K thermometric and current-voltage characteristics of test models of diode temperature sensors are measured and their basic technical parameters are determined. Perspectivity of developed GaP-diodes application as sensitive elements of high-temperature sensor is shown.
Extremely high-brightness kW-class fiber coupled diode lasers with wavelength stabilization
Huang, Robin K.; Chann, Bien; Glenn, John D.
2011-06-01
TeraDiode has produced ultra-high brightness fiber-coupled direct diode lasers. A fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Higher brightness fiber-coupled diode lasers, including a module with 418 W of power coupled to a 100 μm, 0.15 NA fiber, have also been demonstrated.
Origin of Negative Capacitance in Bipolar Organic Diodes
Niu, Quan; Crǎciun, N. Irina; Wetzelaer, Gert-Jan A. H.; Blom, Paul W. M.
2018-03-01
Negative differential capacitance (NC) occurring at low frequencies in organic light-emitting diodes (OLEDs) is a poorly understood phenomenon. We study the origin of the NC effect by systematically varying the number of electron traps in OLEDs based on the polymeric semiconductor poly(p -phenylene vinylene). Increasing the electron trap density enhances the NC effect. The magnitude and observed decrease of the relaxation time is consistent with the (inverse) rate of trap-assisted recombination. The absence of NC in a nearly trap-free light-emitting diode unambiguously shows that trap-assisted recombination is the responsible mechanism for the negative contribution to the capacitance in bipolar organic diodes. Our results reveal that the NC effect can be exploited to quantitatively determine the number of traps in organic semiconductors in a nondestructive fashion.
Response of STFZ diode as on-line gamma dosimeter in radiation processing
International Nuclear Information System (INIS)
Camargo, Fabio de; Goncalves, Josemary A.C.; Pascoalino, Kelly C.; Bueno, Carmen C.; Tuominen, Eija; Tuovinen, Esa; Haerkoenen, Jaakko
2009-01-01
In this work, it is presented the results obtained with this rad-hard STFZ silicon diode as a high-dose gamma dosimeter. This device is a p + /n/n + junction diode, made on FZ Si wafer manufactured by Okmetic Oyj., Vantaa, Finland and processed by the Microelectronics Center of Helsinki University of Technology. The results obtained about the photocurrent registered and total charge accumulated on the diode as a function of the total absorbed dose are presented. The diodes' response showed a significant saturation effect for total absorbed doses higher than approximately 15 kGy. To reduce this effect, some STFZ samples have been pre-irradiated with gamma rays at accumulated dose of 700 kGy in order to saturate the trap production in the diode's sensitive volume. (author)
International Nuclear Information System (INIS)
Anthony, T.R.; Cline, H.E.
1977-01-01
A deep diode atomic battery is made from a bulk semiconductor crystal containing three-dimensional arrays of columnar and lamellar P-N junctions. The battery is powered by gamma rays and x-ray emission from a radioactive source embedded in the interior of the semiconductor crystal
DEFF Research Database (Denmark)
Flindt, Christian; Sørensen, A. S.; Lukin, M. D.
2007-01-01
We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of t...
Relativistic properties of spherical diodes with a radial electron flux
International Nuclear Information System (INIS)
Chetvertkov, V.I.
1987-01-01
Forward and backward electron diodes with concentric spherical electrodes (inner cathode, outer anode or vice versa) are considered under the assumption that the emission is limited by the space charge and the guiding magnetic field is predominantly radial within a region of solid angle α f < 4π bounding the electron flux. The Poisson equations for the relativistic factor γ are solved for generalized model dependences. Ultrarelativistic and new nonrelativistic solutions are found, and analytic approximations to the solution near the cathode are used to carry out numerical calculations. The characteristics of forward and backward diodes turn out to be related to the exact solutions for a planar diode. Accurate approximations are found for calculating the diode parameters in a wide range of voltages; they can also be used to check the validity of the 3/2 laws and the ultrarelativistic solutions
Personal neutron diode dosemeter
International Nuclear Information System (INIS)
Barthe, J.; Lahaye, T.; Moiseev, T.; Portal, G.
1993-01-01
The control and management of neutron doses, received by workers in nuclear power or research facilities, requires a knowledge of cumulated dose equivalent or dose equivalent rate in real time. Individual dosemeters so far developed for this purpose are scarce and not very satisfactory. Passive dosemeters such as TLD systems based on the albedo effect, nuclear emulsions or solid track detectors, do not give sufficiently accurate measurements. Furthermore, the increase in the quality factor and the more restrictive new ICRP recommendations diminish the maximum admissible threshold making currently used systems obsolete. Other than bubble dosemeter systems, based on thermodynamic effects of a superheated gel, no simple electronic device is available at the present time. The development of diode based dosimetric gamma badges, having a size similar to that of credit cards, has stimulated us to design and develop a personal neutron dosemeter based on a double diode system. The results obtained are very encouraging and practical models should become available in the near future. (author)
Fine tuning power diodes with irradiation
International Nuclear Information System (INIS)
Tarneja, K.S.; Bartko, J.; Johnson, J.E.
1976-01-01
Diodes of a particular type are fine tuned with irradiation to optimize the reverse recovery time while minimizing forward voltage drop and providing more uniform electrical characcteristics. The initial and desired minority carrier lifetimes in the anode region of the type are determined as a function of forward voltage drop and reverse recovery time, and the minority carrier radiation damage factor is determined for a desired type of diode and radiation source. The radiation dosage to achieve the desired carrier lifetime with the radiation source is thereafter determined from the function 1/tau = 1/tau 0 + K phi, where tau is the desired minority carrier lifetime, tau 0 is the initial minority carrier lifetime, K is the determined minority carrier radiation damage factor and phi is the radiation dosage. A major surface and preferably the major surface adjoining the anode region of the diodes is then irradiated with the radiation source to the determined radiation dosage. Preferably, the radiation dosage is between about 1 X 10 12 and 5 X 10 13 e/cm 2 , with electron radiation of intensity between 1 and 3 MeV
0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology
International Nuclear Information System (INIS)
MW Dashiell; JF Beausang; G Nichols; DM Depoy; LR Danielson; H Ehsani; KD Rahner; J Azarkevich; P Talamo; E Brown; S Burger; P Fourspring; W Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Marinelli; D Donetski; S Anikeev; G Belenky; S Luryi; DR Taylor; J Hazel
2004-01-01
Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm 2 multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm 2 respectively at operating at temperatures of T radiator = 950 C and T diode = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and ∼0.85 W/cm 2 could be attained under the above operating temperatures
Efficient and bright organic light-emitting diodes on single-layer graphene electrodes
Li, Ning; Oida, Satoshi; Tulevski, George S.; Han, Shu-Jen; Hannon, James B.; Sadana, Devendra K.; Chen, Tze-Chiang
2013-08-01
Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and has limited bendability for future flexible applications. Here we use single-layer graphene as an alternative flexible transparent conductor, yielding white organic light-emitting diodes with brightness and efficiency sufficient for general lighting. The performance improvement is attributed to the device structure, which allows direct hole injection from the single-layer graphene anode into the light-emitting layers, reducing carrier trapping induced efficiency roll-off. By employing a light out-coupling structure, phosphorescent green organic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white organic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m-2 with colour rendering index of 85. The power efficiency of white organic light-emitting diodes reaches 80 lm W-1 at 3,000 cd m-2, comparable to the most efficient lighting technologies.
Electron sheath collapse in an applied-B ion diode
International Nuclear Information System (INIS)
Grechikha, A.V.
1996-01-01
The effect of the electron sheath collapse in an applied-B ion diode due to the presence of the resistive anode plasma layer was found. This effect is more damaging at higher diode voltages and may be responsible for the parasitic load effect observed in the experiments. (author). 4 figs., 2 refs
Electron sheath collapse in an applied-B ion diode
Energy Technology Data Exchange (ETDEWEB)
Grechikha, A V [Forschungszentrum Karlsruhe (Germany). Institut fuer Neutronenphysik und Reaktortechnik
1997-12-31
The effect of the electron sheath collapse in an applied-B ion diode due to the presence of the resistive anode plasma layer was found. This effect is more damaging at higher diode voltages and may be responsible for the parasitic load effect observed in the experiments. (author). 4 figs., 2 refs.
Computer Processing Of Tunable-Diode-Laser Spectra
May, Randy D.
1991-01-01
Tunable-diode-laser spectrometer measuring transmission spectrum of gas operates under control of computer, which also processes measurement data. Measurements in three channels processed into spectra. Computer controls current supplied to tunable diode laser, stepping it through small increments of wavelength while processing spectral measurements at each step. Program includes library of routines for general manipulation and plotting of spectra, least-squares fitting of direct-transmission and harmonic-absorption spectra, and deconvolution for determination of laser linewidth and for removal of instrumental broadening of spectral lines.
Temperature issues with white laser diodes, calculation and approach for new packages
Lachmayer, Roland; Kloppenburg, Gerolf; Stephan, Serge
2015-01-01
Bright white light sources are of significant importance for automotive front lighting systems. Today's upper class systems mainly use HID or LED light sources. As a further step laser diode based systems offer a high luminance, efficiency and allow the realization of new dynamic and adaptive light functions and styling concepts. The use of white laser diode systems in automotive applications is still limited to laboratories and prototypes even though announcements of laser based front lighting systems have been made. But the environment conditions for vehicles and other industry sectors differ from laboratory conditions. Therefor a model of the system's thermal behavior is set up. The power loss of a laser diode is transported as thermal flux from the junction layer to the diode's case and on to the environment. Therefor its optical power is limited by the maximum junction temperature (for blue diodes typically 125 - 150 °C), the environment temperature and the diode's packaging with its thermal resistances. In a car's headlamp the environment temperature can reach up to 80 °C. While the difference between allowed case temperature and environment temperature is getting small or negative the relevant heat flux also becomes small or negative. In early stages of LED development similar challenges had to be solved. Adapting LED packages to the conditions in a vehicle environment lead to today's efficient and bright headlights. In this paper the need to transfer these results to laser diodes is shown by calculating the diodes lifetimes based on the presented model.
Organic light emitting diode with surface modification layer
Basil, John D.; Bhandari, Abhinav; Buhay, Harry; Arbab, Mehran; Marietti, Gary J.
2017-09-12
An organic light emitting diode (10) includes a substrate (12) having a first surface (14) and a second surface (16), a first electrode (32), and a second electrode (38). An emissive layer (36) is located between the first electrode (32) and the second electrode (38). The organic light emitting diode (10) further includes a surface modification layer (18). The surface modification layer (18) includes a non-planar surface (30, 52).
Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications
Khan, A.A.; Jayaswal, Gaurav; Gahaffar, F.A.; Shamim, Atif
2017-01-01
For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.
Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications
Khan, A.A.
2017-07-27
For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.
Infrared diode laser spectroscopy
Czech Academy of Sciences Publication Activity Database
Civiš, Svatopluk; Cihelka, Jaroslav; Matulková, Irena
2010-01-01
Roč. 18, č. 4 (2010), s. 408-420 ISSN 1230-3402 R&D Projects: GA AV ČR IAA400400705 Institutional research plan: CEZ:AV0Z40400503 Keywords : FTIR spectroscopy * absorption spectroscopy * laser diodes Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.027, year: 2010
Non-Reciprocal Geometric Wave Diode by Engineering Asymmetric Shapes of Nonlinear Materials
Energy Technology Data Exchange (ETDEWEB)
Ren, Jie [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Li, Nianbei [Tongji Univ., Shanghai Shi (China)
2014-02-18
Unidirectional nonreciprocal transport is at the heart of many fundamental problems and applications in both science and technology. Here we study how to design the novel wave diode devices to realize the non-reciprocal wave propagations. Analytical results reveal that such non-reciprocal wave propagation can be purely induced by asymmetric geometry in nonlinear materials. The detailed numerical simulations are performed for a more realistic geometric wave diode model with typical asymmetric shape, where good non-reciprocal wave diode effect has been demonstrated. The results open a way for making wave diodes efficiently simply through shape engineering.
Performance enhancement of polymer Schottky diode by doping pentacene
International Nuclear Information System (INIS)
Kang, K.S.; Chen, Y.; Lim, H.K.; Cho, K.Y.; Han, K.J.; Kim, Jaehwan
2009-01-01
Schottky diodes have been fabricated using pentacene-doped poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) as a semiconducting material. To understand the fundamental properties of the pentacene-doped PEDOT:PSS, ultraviolet visible (UV) absorption spectroscopy was employed. It was found that a significant amount of pentacene can dissolve in n-methylpyrrolidone solvent. No characteristic absorption peak of pentacene was observed in the UV-visible spectra of PEDOT:PSS films doped with pentacene,. However, the absorption intensity of the doped PEDOT:PSS films increased as the pentacene concentration increased in particular in the UV region. The atomic force microscope images show that the surface roughnesses of PEDOT:PSS films increased as the pentacene concentration increased. Three-layer Schottky diodes comprising Al/PEDOT:PSS/Au or Al/PEDOT:PSS-pentacene/Au were fabricated. The maximum forward currents of non-doped and doped Schottky diodes were 4.8 and 440 μA/cm 2 at 3.3 MV/m, respectively. The forward current increased nearly two orders of magnitude for Schottky diode doped with 11.0 wt.% of pentacene.
Anode plasma dynamics in the self-magnetic-pinch diode
Directory of Open Access Journals (Sweden)
Nichelle Bruner
2011-02-01
Full Text Available The self-magnetic-pinch diode is being developed as an intense electron beam source for pulsed-power-driven x-ray radiography. In high-power operation, the beam electrons desorb contaminants from the anode surface from which positive ions are drawn to the cathode. The counterstreaming electrons and ions establish an equilibrium current. It has long been recognized, however, that expanding electrode plasmas can disrupt this equilibrium and cause rapid reduction of the diode impedance and the radiation pulse. Recently developed numerical techniques, which enable simultaneous modeling of particle currents with 10^{13} cm^{-3} densities to plasmas of near solid density, are applied to a model of the self-magnetic-pinch diode which includes the formation and evolution of anode surface plasmas. Two mechanisms are shown to cause rapid impedance loss, anode plasma expansion into the anode-cathode (A-K gap, and increased ion space-charge near the cathode surface. The former mechanism dominates for shorter A-K gaps, while the latter dominates for longer gaps. Model results qualitatively reproduce the time-dependent impedances measured for this diode.
Gate Modulation of Graphene-ZnO Nanowire Schottky Diode.
Liu, Ren; You, Xu-Chen; Fu, Xue-Wen; Lin, Fang; Meng, Jie; Yu, Da-Peng; Liao, Zhi-Min
2015-05-06
Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increases quickly with sweeping Vg towards the negative value, while decreases slowly towards the positive Vg. Our results are helpful to understand the fundamental mechanism of the electric transport in graphene-semiconductor Schottky diode.
Study of 4H-SiC junction barrier Schottky diode using field guard ring termination
International Nuclear Information System (INIS)
Feng-Ping, Chen; Yu-Ming, Zhang; Hong-Liang, Lü; Yi-Men, Zhang; Jian-Hua, Huang
2010-01-01
This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Quench protection diodes for the large hadron collider LHC at CERN
International Nuclear Information System (INIS)
Hagedorn, D.; Naegele, W.
1992-01-01
For the quench protection of the main ring dipole and quadrupole magnets for the proposed Large Hadron Collider at CERN two lines of approach have been pursued for the realization of a suitable high current by-pass element and liquid helium temperature. Two commercially available diodes of the HERA type connected in parallel can easily meet the requirements if a sufficient good current sharing is imposed by current balancing elements. Design criteria for these current balancing elements are derived from individual diode characteristics. Single diode elements of thin base region, newly developed in industry, have been successfully tested. The results are promising and, if the diodes can be made with reproducible characteristics, they will provide the preferred solution especially in view of radiation hardness
Experiments on high-power ion beam generation in self-insulated diodes
International Nuclear Information System (INIS)
Bystritskii, V.M.; Glyshko, Yu.A.; Sinerbrjukhov, A.A.; Kharlov, A.V.
1991-01-01
Experimental results are given on high-power ion beams (HPIB) generation in a vacuum spherical focusing diode with self-magnetic insulation, obtained from the nanosecond accelerator PARUS with 0.2-TW power and 60-ns pulse duration for a matched load. When the passive plasma source of the ions was used, the efficiency of the HPIB generation was measured to be as high as 20% for 700-kV diode voltage and 10-kA/cm 2 beam density in the focal plane. The application of a coaxial plasma opening switch (POS) prior to the diode resulted in a factor-of-1.8 increase in the diode power in comparison with a match operation in the absence of a POS. (author)
Integrated power conditioning for laser diode arrays
International Nuclear Information System (INIS)
Hanks, R.L.; Kirbie, H.C.; Newton, M.A.; Farhoud, M.S.
1995-01-01
This compact modulator has demonstated its ability to efficiently and accurately drive a laser diode array. The addition of the crowbar protection circuit is an invaluable addition to the integrated system and is capable of protecting the laser diode array against severe damage. We showed that the correlation between measured data and simulation indicates that our modulator model is valid and can be used as a tool in the design of future systems. The spectrometer measurements that we conducted underline the imprtance of current regulation to stable laser operation
Operation of AC Adapters Visualized Using Light-Emitting Diodes
Regester, Jeffrey
2016-01-01
A bridge rectifier is a diamond-shaped configuration of diodes that serves to convert alternating current(AC) into direct current (DC). In our world of AC outlets and DC electronics, they are ubiquitous. Of course, most bridge rectifiers are built with regular diodes, not the light-emitting variety, because LEDs have a number of disadvantages. For…
Junction depth dependence of breakdown in silicon detector diodes
International Nuclear Information System (INIS)
Beck, G.A.; Carter, A.A.; Carter, J.R.; Greenwood, N.M.; Lucas, A.D.; Munday, D.J.; Pritchard, T.W.; Robinson, D.; Wilburn, C.D.; Wyllie, K.
1996-01-01
The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction.We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage,in reasonable agreement with previous studies of junction breakdown. (orig.)
Directory of Open Access Journals (Sweden)
Stanković Koviljka
2009-01-01
Full Text Available The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.
Ion diode diagnostics to resolve beam quality issues
Energy Technology Data Exchange (ETDEWEB)
Bluhm, H; Buth, L; Hoppe, P [Forschungszentrum Karlsruhe (Germany). Institut fuer Neutronenphysik und Reaktortechnik; and others
1997-12-31
Various diagnostic methods and instruments are under development at the Forschungszentrum Karlsruhe to measure important physical quantities in the accelerating gap of high power diodes on KALIF with a high spatial and temporal resolution. The methods include optical spectroscopy, refractive index measurements, dispersion interferometry, and high resolution energy analysis. The setup of these diagnostic tools and the first results obtained for applied and self-magnetically insulated diodes are presented. (author). 6 figs., 5 refs.
The All Boron Carbide Diode Neutron Detector: Experiment and Modeling Approach
International Nuclear Information System (INIS)
Sabirianov, Ildar F.; Brand, Jennifer I.; Fairchild, Robert W.
2008-01-01
Boron carbide diode detectors, fabricated from two different polytypes of semiconducting boron carbide, will detect neutrons in reasonable agreement with theoretical expectations. The performance of the all boron carbide neutron detector differs, as expected, from devices where a boron rich neutron capture layer is distinct from the diode charge collection region (i.e. a conversion layer solid state detector). Diodes were fabricated from natural abundance boron (20% 10 B and 80% 11 B.) directly on the metal substrates and metal contacts applied to the films as grown. The total boron depth was on the order of 2 microns. This is clearly not a conversion-layer configuration. The diodes were exposed to thermal neutrons generated from a paraffin moderated plutonium-beryllium source in moderated and un-moderated, as well as shielded and unshielded experimental configurations, where the expected energy peaks at at 2.31 MeV and 2.8 MeV were clearly observed, albeit with some incomplete charge collection typical of thinner diode structures. The results are compared with other boron based thin film detectors and literature models. (authors)
Investigation of Power Flow from a Plasma Opening Switch to an Electron Beam Diode
National Research Council Canada - National Science Library
Black, D
1999-01-01
...) and an electron-beam (e-beam) diode load. The parameters that were varied independently in this set of experiments were the conduction time, the e-beam diode anode-cathode (A-K) gap (diode impedance...
Extraction of diode parameters of silicon solar cells under high illumination conditions
International Nuclear Information System (INIS)
Khan, Firoz; Baek, Seong-Ho; Park, Yiseul; Kim, Jae Hyun
2013-01-01
Graphical abstract: We have developed an analytical method to determine the diode parameters of concentrator solar cells under high illumination conditions. The determined values of diode parameters have been used to compute the theoretical values of performance parameters. The computed values of the open circuit voltage, curve factor, and efficiency obtained using diode parameters determined with this method showed good agreement (<2% discrepancy) with their experimental values in the temperature range 298–323 K. Highlights: • An analytical method to extract the diode parameters of concentrated Si solar cells. • This method uses single I–V curve under high illumination conditions. • The theoretical values of performance parameters have been computed. • Theoretical values of parameters matched within 2% discrepancy limit. • This method gives best results among the methods used in this work. - Abstract: An analytical method has been developed to extract all four diode parameters, namely the shunt resistance, series resistance, diode ideality factor, and reverse saturation current density, using a single J–V curve, based on one exponential model of silicon solar cells under high illumination conditions. The slope of the J–V curve (dV/dJ) at a short circuit condition is used to determine the value of the shunt resistance. The slope of the J–V curve at an open circuit condition together with the short circuit current density, open circuit voltage, current density, and voltage at maximum power point have been used to determine the values of the series resistance, diode ideality factor, and reverse saturation current density. The determined values of the diode parameters have been used to compute the theoretical values of the open circuit voltage, curve factor, and efficiency of the solar cell. The theoretical J–V curves matched well with the corresponding experimental curves. This method is applied to determine the diode parameters of concentrator
Diode laser spectroscopy of oxygen electronic band at 760 nm
International Nuclear Information System (INIS)
Lucchesini, A.; De Rosa, M.; Gozzini, S.
1998-01-01
Collisional broadening and shift coefficients have been obtained by analyzing the line shapes of oxygen absorptions in the 760 nm electronic band. By using a diode laser spectrometer with commercially available etherostructure Al x Ga 1-x As diode lasers operating in 'free-running mode', line shape parameters have been collected at room temperature by varying the gas pressure. A systematic study has been carried on seven absorption lines by scanning the diode laser emission wavelength around the gas resonances. The weak absorption lines have been detected by using the wavelength modulation (WM) spectroscopy technique with second-harmonic detection
Frequency-comb-assisted broadband precision spectroscopy with cascaded diode lasers
DEFF Research Database (Denmark)
Liu, Junqiu; Brasch, Victor; Pfeiffer, Martin H. P.
2016-01-01
Frequency-comb-assisted diode laser spectroscopy, employing both the accuracy of an optical frequency comb and the broad wavelength tuning range of a tunable diode laser, has been widely used in many applications. In this Letter, we present a novel method using cascaded frequency agile diode lasers......, which allows us to extend the measurement bandwidth to 37.4 THz (1355-1630 nm) at megahertz resolution with scanning speeds above 1 THz/s. It is demonstrated as a useful tool to characterize a broadband spectrum for molecular spectroscopy, and in particular it enables us to characterize the dispersion...
Investigations of shot reproducibility for the SMP diode at 4.5 MV.
Energy Technology Data Exchange (ETDEWEB)
Bennett, Nichelle [National Security Technologies, LLC, Las Vegas, NV (United States); Crain, Marlon D. [National Security Technologies, LLC, Las Vegas, NV (United States); Droemer, Darryl W. [National Security Technologies, LLC, Las Vegas, NV (United States); Gignac, Raymond Edward [National Security Technologies, LLC, Las Vegas, NV (United States); Lare, Gregory A. [National Security Technologies, LLC, Las Vegas, NV (United States); Molina, Isidro [National Security Technologies, LLC, Las Vegas, NV (United States); Obregon, Rafael [National Security Technologies, LLC, Las Vegas, NV (United States); Smith, Chase C. [National Security Technologies, LLC, Las Vegas, NV (United States); Wilkins, Frank Lee [National Security Technologies, LLC, Las Vegas, NV (United States); Welch, Dale Robert [Voss Scientific, LLC, Albuquerque, NM (United States); Cordova, Steve Ray; Gallegos, M.; Johnston, Mark D.; Kiefer, Mark Linden; Leckbee, Joshua J.; Nielsen, Daniel Scott; Oliver, Bryan Velten; Renk, Timothy Jerome; Romero, Tobias; Webb, Timothy Jay; Ziska, Derek Raymond
2013-11-01
In experiments conducted on the RITS-6 accelerator, the SMP diode exhibits sig- ni cant shot-to-shot variability. Speci cally, for identical hardware operated at the same voltage, some shots exhibit a catastrophic drop in diode impedance. A study is underway to identify sources of shot-to-shot variations which correlate with diode impedance collapse. To remove knob emission as a source, only data from a shot series conducted with a 4.5-MV peak voltage are considered. The scope of this report is limited to sources of variability which occur away from the diode, such as power ow emission and trajectory changes, variations in pulsed power, dustbin and transmission line alignment, and di erent knob shapes. We nd no changes in the transmission line hardware, alignment, or hardware preparation methods which correlate with impedance collapse. However, in classifying good versus poor shots, we nd that there is not a continuous spectrum of diode impedance behavior but that the good and poor shots can be grouped into two distinct impedance pro les. This result forms the basis of a follow-on study focusing on the variability resulting from diode physics. 3
Features of current-voltage characteristic of nonequilibrium trench MOS barrier Schottky diode
Mamedov, R. K.; Aslanova, A. R.
2018-06-01
The trench MOS barrier Schottky diodes (TMBS diode) under the influence of the voltage drop of the additional electric field (AEF) appearing in the near-contact region of the semiconductor are in a nonequilibrium state and their closed external circuit flows currents in the absence of an external voltage. When an external voltage is applied to the TMBS diode, the current transmission is described by the thermionic emission theory with a specific feature. Both forward and reverse I-V characteristics of the TMBS diode consist of two parts. In the initial first part of the forward I-V characteristic there are no forward currents, but reverse saturation currents flow, in its subsequent second part the currents increase exponentially with the voltage. In the initial first part of the reverse I-V characteristic, the currents increase in an abrupt way and in the subsequent second part the saturation currents flow under the action of the image force. The mathematical expressions for forward and reverse I-V characteristic of the TMBS diode and also narrow or nanostructure Schottky diode are proposed, which are in good agreement with the results of experimental and calculated I-V characteristics.
Ultra-high brightness wavelength-stabilized kW-class fiber coupled diode laser
Huang, Robin K.; Chann, Bien; Glenn, John D.
2011-03-01
TeraDiode has produced a fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Further advances of these ultra-bright lasers are also projected.
Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode
Navarro, Dondee; Herrera, Fernando; Zenitani, Hiroshi; Miura-Mattausch, Mitiko; Yorino, Naoto; Jürgen Mattausch, Hans; Takusagawa, Mamoru; Kobayashi, Jun; Hara, Masafumi
2018-04-01
A compact model applicable for both Schottky barrier diode (SBD) and junction barrier Schottky diode (JBS) structures is developed. The SBD model considers the current due to thermionic emission in the metal/semiconductor junction together with the resistance of the lightly doped drift layer. Extension of the SBD model to JBS is accomplished by modeling the distributed resistance induced by the p+ implant developed for minimizing the leakage current at reverse bias. Only the geometrical features of the p+ implant are necessary to model the distributed resistance. Reproduction of 4H-SiC SBD and JBS current-voltage characteristics with the developed compact model are validated against two-dimensional (2D) device-simulation results as well as measurements at different temperatures.
Efficient thermal diode with ballistic spacer
Chen, Shunda; Donadio, Davide; Benenti, Giuliano; Casati, Giulio
2018-03-01
Thermal rectification is of importance not only for fundamental physics, but also for potential applications in thermal manipulations and thermal management. However, thermal rectification effect usually decays rapidly with system size. Here, we show that a mass-graded system, with two diffusive leads separated by a ballistic spacer, can exhibit large thermal rectification effect, with the rectification factor independent of system size. The underlying mechanism is explained in terms of the effective size-independent thermal gradient and the match or mismatch of the phonon bands. We also show the robustness of the thermal diode upon variation of the model's parameters. Our finding suggests a promising way for designing realistic efficient thermal diodes.
Pulsed diode source of polarized ions
International Nuclear Information System (INIS)
Katzenstein, J.; Rostoker, N.
1983-01-01
The advantages of polarized nuclei for fusion reactors have recently been described. We propose a pulsed source of polarized nuclei that consists of an ion diode with a polarized anode. With magnetic resonance techniques the nuclear spins of the protons of solid NH 3 can be made about 90 to 95% polarized. This material would be used for the anode. The diode would be pulsed with a voltage of 1-200K-volts for 1-2 μ sec. Flashover of the anode produces a surface plasma from which the polarized protons would be extracted to form a beam. Depolarization could be detected by comparing reaction cross sections and/or distribution of reaction products with similar results for unpolarized beams
Non-laminar flow model for the impedance of a rod-pinch diode
International Nuclear Information System (INIS)
Ottinger, Paul F.; Schumer, Joseph W.; Strasburg, Sean D.; Swanekamp, Stephen B.; Oliver, Bryan V.
2002-01-01
A previous laminar flow model for the rod-pinch diode is extended to include a transverse pressure term to study the effects of non-laminar flow. The non-laminar nature of the flow has a significant impact on the diode impedance. Results show that the introduction of the transverse pressure decreases the diode impedance predicted by the model bringing it into better agreement with experimental data
Performance measurements of hybrid PIN diode arrays
International Nuclear Information System (INIS)
Jernigan, J.G.; Arens, J.F.; Collins, T.; Herring, J.; Shapiro, S.L.; Wilburn, C.D.
1990-05-01
We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format having 10 x 64 pixels, each 120 μm square, and the other format having 256 x 256 pixels, each 30 μm square. In both cases, the thickness of the PIN diode layer is 300 μm. Measurements of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 13 figs
Determination of QW laser diode degradation based on the emission spectrum
Directory of Open Access Journals (Sweden)
Bliznyuk Vladimir
2017-01-01
Full Text Available The possibility of laser diodes degradation control by monitoring of their spectrum is shown. For red and infra-red laser diodes, the time dependence of the radiation spectrum width was obtained.
Diode-pumped Tm:YAP/YVO4 intracavity Raman laser
International Nuclear Information System (INIS)
Zhao, Jiaqun; Zhou, Xiaofeng; Wang, Guodong; Cheng, Ping; Xu, Feng
2017-01-01
The laser performance based on YVO 4 Raman conversion in a diode-pumped actively Q-switched Tm:YAP laser is demonstrated for the first time. With an incident diode power of 10.9 W and a pulse repetition rate of 1 kHz, the average output powers for the first Stokes laser at 2.4 μm is about 270 mW. (paper)
Interference phenomenon determines the color in an organic light emitting diode
Granlund, Thomas; Pettersson, Leif A. A.; Anderson, Mats R.; Inganäs, Olle
1997-06-01
We report on electroluminescence from two-layer organic diodes made of poly(3-methyl-4-octylthiophene) and 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,2,4-oxadiazole films between electrodes of indium tin oxide and Ca/Al. The diodes emitted light in the green-blue range; the electroluminescence spectra varied between diodes with different thicknesses of the polymer and molecular layers. The optical phenomena were simulated with a model accounting for interference effects; simulated results showed that the electroluminescence from the organic diode can be due neither to luminescence of the polymer nor of the molecular layer. These model simulations, together with electrochemical measurements, can be interpreted as evidence for an indirect optical transition at the polymer/molecule interface that only occurs in a strong electric field. We label this transition an electroplex.
Directory of Open Access Journals (Sweden)
Rajesh Kinhikar
2012-01-01
Full Text Available Introduction: The new diode Isorad was validated for intensity modulated radiotherapy (IMRT and the observations during the validation are reported. Materials and Methods: The validation includes intrinsic precision, post-irradiation stability, dose linearity, dose-rate effect, angular response, source to surface (SSD dependence, field size dependence, and dose calibration. Results: The intrinsic precision of the diode was more than 1% (1 σ. The linearity found in the whole range of dose analyzed was 1.93% (R 2 = 1. The minimum and maximum variation in the measured and calculated dose were found to be 0.78% (with 25 MU at ioscentre and 4.8% (with 1000 MU at isocentre, respectively. The maximal variation in angular response with respect to arbitrary angle 0° found was 1.31%. The diode exhibited a 51.7% and 35% decrease in the response in the 35 cm and 20 cm SSD range, respectively. The minimum and the maximum variation in the measured dose from the diode and calculated dose were 0.82% (5 cm × 5 cm and 3.75% (30 cm × 30 cm, respectively. At couch 270°, the response of the diode was found to vary maximum by 1.4% with 60 gantry angle. Mean variation between measured dose with diode and planned dose by TPS was found to be 1.3% (SD 0.75 for IMRT patient-specific quality assurance. Conclusion: For the evaluation of IMRT, use of cylindrical diode is strongly recommended.
Diode-laser-illuminated automotive lamp systems
Marinelli, Michael A.; Remillard, Jeffrey T.
1998-05-01
We have utilized the high brightness of state-of-the-art diode laser sources, and a variety of emerging optical technologies to develop a new class of thin, uniquely styled automotive brake and signal lamps. Using optics based on thin (5 mm) plastic sheets, these lamps provide appearance and functional advantages not attainable with traditional automotive lighting systems. The light is coupled into the sheets using a 1 mm diameter glass fiber, and manipulated using refraction and reflection from edges, surfaces, and shaped cut-outs. Light can be extracted with an efficiency of approximately 50% and formed into a luminance distribution that meets the Society of Automotive Engineers (SAE) photometric requirements. Prototype lamps using these optics have been constructed and are less than one inch in thickness. Thin lamps reduce sheet metal costs, complexity, material usage, weight, and allow for increased trunk volume. In addition, these optics enhance lamp design flexibility. When the lamps are not energized, they can appear body colored, and when lighted, the brightness distribution across the lamp can be uniform or structured. A diode laser based brake lamp consumes seven times less electrical power than one using an incandescent source and has instant on capability. Also, diode lasers have the potential to be 10-year/150,000 mile light sources.
Organic light emitting diode with light extracting electrode
Energy Technology Data Exchange (ETDEWEB)
Bhandari, Abhinav; Buhay, Harry
2017-04-18
An organic light emitting diode (10) includes a substrate (20), a first electrode (12), an emissive active stack (14), and a second electrode (18). At least one of the first and second electrodes (12, 18) is a light extracting electrode (26) having a metallic layer (28). The metallic layer (28) includes light scattering features (29) on and/or in the metallic layer (28). The light extracting features (29) increase light extraction from the organic light emitting diode (10).
Active Stabilization of a Diode Laser Injection Lock
Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep
2016-01-01
We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudde...
An analysis of transient thermal properties for high power GaN-based laser diodes
Energy Technology Data Exchange (ETDEWEB)
Kim, Jae Min; Kim, Seungtaek; Kang, Sung Bok; Kim, Young Jin; Jeong, Hoon; Lee, Kyeongkyun; Kim, Jongseok [Korea Institute of Industrial Technology, 35-3 Hongcheon-Ri, Ipjang-Myeon, Cheonan, Chungnam 331-825 (Korea); Lee, Sangdon; Suh, Dongsik [QSI Co., Ltd., 315-9 Cheonheung-Ri, Sungger-Eup, Cheonan, Chungnam 330-836 (Korea); Yi, Jeong Hoon; Choi, Yoonho; Jung, Seok Gu; Noh, Minsoo [LG Electronics Advanced Research Institute, 16 Woomyeon-Dong, Seocho-Gu, Seoul 137-724 (Korea)
2010-07-15
Thermal properties of 405 nm GaN-based laser diodes were investigated by employing a transient heating response method based on the temperature dependence of diode forward voltage. Thermal resistances of materials consisting of packaged laser diodes were differentiated in transient thermal response curves at a current below threshold current. With a current above threshold current, no significant change in thermal resistances and difference between junction-up and junction-down laser diodes was observed at pulses shorter than 3 sec. From an analysis with long current injections, thermal resistance of a packaged laser diode with a junction-up bonding was {proportional_to}45 C/W which was higher than that of a junction-down bonded laser diode by {proportional_to}10 C/W. Further analyses based on parameters obtained from voltage recovery curves indicated that the time constant for cooling is directly related to the thermal resistance and thermal capacitance of a laser diode package. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Savary, F; Bednarek, M J; Dahlerup-Petersen, K; D'Angelo, G; Dib, G; Giloux, C; Grand-Clement, L; Izquierdo Bermudez, S; Moron-Ballester, R; Prin, H; Roger, V; Verweij, A; Willering, G
2014-01-01
The LHC main superconducting circuits are composed of up to 154 series-connected dipole magnets and 51 series-connected quadrupole magnets. These magnets operate at 1.9 K in superfluid helium at a nominal current of 11.85 kA. Cold diodes are connected in parallel to each magnet in order to bypass the current in case of a quench in the magnet while ramping down the current in the entire circuit. Both the diodes and the diode leads should therefore be capable of conducting this exponentially decaying current with time constants of up to 100 s. The diode stacks consist of the diodes and their heat sinks, and are essential elements of the protection system from which extremely high reliability is expected. The electrical resistance of 24 diode leads was measured in the LHC machine during operation. Unexpectedly high resistances of the order of 40 μΩ were measured at a few locations, which triggered a comprehensive review of the diode behaviour and of the associated current leads and bolted contacts. In this pap...
Resonance ionization mass spectrometry using tunable diode lasers
International Nuclear Information System (INIS)
Shaw, R.W.; Young, J.P.; Smith, D.H.
1990-01-01
Tunable semiconductor diode lasers will find many important applications in atomic spectroscopy. They exhibit the desirable attributes of lasers: narrow bandwidth, tunability, and spatial coherence. At the same time, they possess few of the disadvantages of other tunable lasers. They require no alignment, are simple to operate, and are inexpensive. Practical laser spectroscopic instruments can be envisioned. The authors have applied diode lasers to resonance ionization mass spectrometry (RIMS) of some of the lanthanide elements. Sub-Doppler resolution spectra have been recorded and have been used for atomic hyperfine structure analysis. Isotopically-selective ionization has been accomplished, even in cases where photons from a broadband dye laser are part of the overall ionization process and where the isotopic spectral shift is very small. A convenient RIMS instrument for isotope ratio measurements that employs only diode lasers, along with electric field ionization, should be possible
Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode.
Kumar, Ashutosh; Kashid, Ranjit; Ghosh, Arindam; Kumar, Vikram; Singh, Rajendra
2016-03-01
Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes. The ideality factor of graphene/GaN and Ni/GaN diodes are measured to be 1.33 and 1.51, respectively, which is suggestive of comparatively higher thermionic emission current in graphene/GaN diode. The barrier height values for graphene/GaN diode obtained using thermionic emission model and Richardson plots are found to be 0.60 and 0.72 eV, respectively, which are higher than predicted barrier height ∼0.40 eV as per the Schottky-Mott model. The higher barrier height is attributed to hole doping of graphene due to graphene-Au interaction which shifts the Fermi level in graphene by ∼0.3 eV. The magnitude of flicker noise of graphene/GaN Schottky diode increases up to 175 K followed by its decrease at higher temperatures. This indicates that diffusion currents and barrier inhomogeneities dominate the electronic transport at lower and higher temperatures, respectively. The exfoliated graphene/GaN diode is found to have lower level of barrier inhomogeneities than conventional Ni/GaN diode, as well as earlier reported graphene/GaN diode fabricated using chemical vapor deposited graphene. The lesser barrier inhomogeneities in graphene/GaN diode results in lower flicker noise by 2 orders of magnitude as compared to Ni/GaN diode. Enhanced thermionic emission current, lower level of inhomogeneities, and reduced flicker noise suggests that graphene-GaN Schottky diodes may have the underlying trend for replacing metal-GaN Schottky diodes.
Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel
2005-06-01
We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current-voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur-gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current-voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current-voltage characteristics, similar to the phenomena in a semiconductor diode. Author contributions: F.E., H.B.W., and M.M. designed research; M.E., R.O., M.K., M.F., F.E., H.B.W., and M.M. performed research; M.E., R.O., M.K., M.F., C.v.H., F.W., F.E., H.B.W., and M.M. contributed new reagents/analytic tools; M.E., R.O., M.K., C.v.H., F.E., H.B.W., and M.M. analyzed data; and F.E., H.B.W., and M.M. wrote the paper.This paper was submitted directly (Track II) to the PNAS office.Abbreviations: A, acceptor; D, donor; MCB, mechanically controlled break junction.Data deposition: The atomic coordinates have been deposited in the Cambridge Structural Database, Cambridge Crystallographic Data Centre, Cambridge CB2 1EZ, United Kingdom (CSD reference no. 241632).
Diode temperature sensor array for measuring and controlling micro scale surface temperature
International Nuclear Information System (INIS)
Han, Il Young; Kim, Sung Jin
2004-01-01
The needs of micro scale thermal detecting technique are increasing in biology and chemical industry. For example, thermal finger print, Micro PCR(Polymer Chain Reaction), TAS and so on. To satisfy these needs, we developed a DTSA(Diode Temperature Sensor Array) for detecting and controlling the temperature on small surface. The DTSA is fabricated by using VLSI technique. It consists of 32 array of diodes(1,024 diodes) for temperature detection and 8 heaters for temperature control on a 8mm surface area. The working principle of temperature detection is that the forward voltage drop across a silicon diode is approximately proportional to the inverse of the absolute temperature of diode. And eight heaters (1K) made of poly-silicon are added onto a silicon wafer and controlled individually to maintain a uniform temperature distribution across the DTSA. Flip chip packaging used for easy connection of the DTSA. The circuitry for scanning and controlling DTSA are also developed
Simulation studies of current transport in metal-insulator-semiconductor Schottky barrier diodes
International Nuclear Information System (INIS)
Chand, Subhash; Bala, Saroj
2007-01-01
The current-voltage characteristics of Schottky diodes with an interfacial insulator layer are analysed by numerical simulation. The current-voltage data of the metal-insulator-semiconductor Schottky diode are simulated using thermionic emission diffusion (TED) equation taking into account an interfacial layer parameter. The calculated current-voltage data are fitted into ideal TED equation to see the apparent effect of interfacial layer parameters on current transport. Results obtained from the simulation studies shows that with mere presence of an interfacial layer at the metal-semiconductor interface the Schottky contact behave as an ideal diode of apparently high barrier height (BH), but with same ideality factor and series resistance as considered for a pure Schottky contact without an interfacial layer. This apparent BH decreases linearly with decreasing temperature. The effects giving rise to high ideality factor in metal-insulator-semiconductor diode are analysed. Reasons for observed temperature dependence of ideality factor in experimentally fabricated metal-insulator-semiconductor diodes are analysed and possible mechanisms are discussed
The Pierce diode with an external circuit: II, Non-uniform equilibria
International Nuclear Information System (INIS)
Lawson, W.S.
1987-01-01
The non-uniform (non-linear) equilibria of the classical (short circuit) Pierce diode and the extended (series RLC external circuit) Pierce diode are described theoretically, and explored via computer simulation. It is found that most equilibria are correctly predicted by theory, but that the continuous set of equilibria of the classical Pierce diode at α = 2π are not observed. The stability characteristics of the non-uniform equilibria are also worked out, and are consistent with the simulations. 8 refs., 22 figs., 3 tabs
Experimental evidence of energetic neutrals production in an ion diode
Energy Technology Data Exchange (ETDEWEB)
Pushkarev, A.I., E-mail: aipush@mail.ru; Isakova, Y.I.; Khaylov, I.P.
2015-01-15
The paper presents several experimental proofs of the formation of energetic charge-exchange neutrals in a self-magnetically insulated ion diode with a graphite cathode. The energetic neutrals are thought to be produced as a result of charge exchange process between accelerated ions and stationary neutral molecules. The experiments have been carried out using both a diode with externally applied magnetic insulation (single-pulse mode: 100 ns, 250–300 kV) and a diode with self-magnetic insulation (double-pulse mode: 300–500 ns, 100–150 kV (negative pulse); 120 ns, 250–300 kV (positive pulse)). The motivation for looking at the neutral component of the ion beam came when we compared two independent methods to measure the energy density of the beam. A quantitative comparison of infrared measurements with signals from Faraday cups and diode voltage was made to assess the presence of neutral atoms in the ion beam. As another proof of charge-exchange effects in ion diode we present the results of statistical analysis of diode performance. It was found that the shot-to shot variation of the energy density in a set of 50–100 shots does not exceed 11%, whilst the same variation for ion current density was 20–30%; suggesting the presence of neutrals in the beam. Moreover, the pressure in the zone of ion beam energy dissipation exceeds the results stated in cited references. The difference between our experimental data and results stated by other authors we attribute to the presence of a low-energy charge-exchange neutral component in the ion beam.
Electrical and optical response of a laser diode to transient ionizing radiation
International Nuclear Information System (INIS)
Baggio, J.; Brisset, C.; Sommer, J.L.; D'hose, C.; Lalande, P.; Leray, J.L.; Musseau, O.
1996-01-01
The authors have studied transient irradiation effects on the optical and electrical responses of a laser diode. The influence of dose rate, ranging from 10 9 to 10 12 rad(Si)/s, has been investigated through a complete experimental study. Dose rate vulnerability of the laser diode has been observed. Electrical and optical transient responses are determined by the dose rate, the diode structure, and its operating point
Operational characteristics and analysis of the immersed-Bz diode on RITS-3.
Energy Technology Data Exchange (ETDEWEB)
Bruner, Nichelle " Nicki"
2006-02-01
The immersed-B{sub z} diode is being developed as a high-brightness, flash x-ray radiography source. This diode is a foil-less electron-beam diode with a long, thin, needle-like cathode inserted into the bore of a solenoid. The solenoidal magnetic field guides the electron beam emitted from the cathode to the anode while maintaining a small beam radius. The electron beam strikes a thin, high-atomic-number anode and produces bremsstrahlung. We report on an extensive series of experiments where an immersed-B{sub z} diode was fielded on the RITS-3 pulsed power accelerator, a 3-cell inductive voltage generator that produced peak voltages between 4 and 5 MV, {approx}140 kA of total current, and power pulse widths of {approx}50 ns. The diode is a high impedance device that, for these parameters, nominally conducts {approx}30 kA of electron beam current. Diode operating characteristics are presented and two broadly characterized operating regimes are identified: a nominal operating regime where the total diode current is characterized as classically bipolar and an anomalous impedance collapse regime where the total diode current is in excess of the bipolar limit and up to the full accelerator current. The operating regimes are approximately separated by cathode diameters greater than {approx}3 mm for the nominal regime and less than {approx} 3 mm for the anomalous impedance collapse regime. This report represents a compilation of data taken on RITS-3. Results from key parameter variations are presented in the main body of the report and include cathode diameter, anode-cathode gap, and anode material. Results from supporting parameter variations are presented in the appendices and include magnetic field strength, prepulse, pressure and accelerator variations.
Operational characteristics and analysis of the immersed-Bz diode on RITS-3
International Nuclear Information System (INIS)
Bruner, Nichelle
2006-01-01
The immersed-B z diode is being developed as a high-brightness, flash x-ray radiography source. This diode is a foil-less electron-beam diode with a long, thin, needle-like cathode inserted into the bore of a solenoid. The solenoidal magnetic field guides the electron beam emitted from the cathode to the anode while maintaining a small beam radius. The electron beam strikes a thin, high-atomic-number anode and produces bremsstrahlung. We report on an extensive series of experiments where an immersed-B z diode was fielded on the RITS-3 pulsed power accelerator, a 3-cell inductive voltage generator that produced peak voltages between 4 and 5 MV, ∼140 kA of total current, and power pulse widths of ∼50 ns. The diode is a high impedance device that, for these parameters, nominally conducts ∼30 kA of electron beam current. Diode operating characteristics are presented and two broadly characterized operating regimes are identified: a nominal operating regime where the total diode current is characterized as classically bipolar and an anomalous impedance collapse regime where the total diode current is in excess of the bipolar limit and up to the full accelerator current. The operating regimes are approximately separated by cathode diameters greater than ∼3 mm for the nominal regime and less than ∼ 3 mm for the anomalous impedance collapse regime. This report represents a compilation of data taken on RITS-3. Results from key parameter variations are presented in the main body of the report and include cathode diameter, anode-cathode gap, and anode material. Results from supporting parameter variations are presented in the appendices and include magnetic field strength, prepulse, pressure and accelerator variations
AlGaN-based laser diodes for the short-wavelength ultraviolet region
International Nuclear Information System (INIS)
Yoshida, Harumasa; Kuwabara, Masakazu; Yamashita, Yoji; Takagi, Yasufumi; Uchiyama, Kazuya; Kan, Hirofumi
2009-01-01
We have demonstrated the room-temperature operation of GaN/AlGaN and indium-free AlGaN multiple-quantum-well (MQW) laser diodes under the pulsed-current mode. We have successfully grown low-dislocation-density AlGaN films with AlN mole fractions of 20 and 30% on sapphire substrates using the hetero-facet-controlled epitaxial lateral overgrowth (hetero-FACELO) method. GaN/AlGaN and AlGaN MQW laser diodes have been fabricated on the low-dislocation-density Al 0.2 Ga 0.8 N and Al 0.3 Ga 0.7 N films, respectively. The GaN/AlGaN MQW laser diodes lased at a peak wavelength ranging between 359.6 and 354.4 nm. A threshold current density of 8 kA cm -2 , an output power as high as 80 mW and a differential external quantum efficiency (DEQE) of 17.4% have been achieved. The AlGaN MQW laser diodes lased at a peak wavelength down to 336.0 nm far beyond the GaN band gap. For the GaN/AlGaN MQW laser diodes, the modal gain coefficient and the optical internal loss are estimated to be 4.7±0.6 cm kA -1 and 10.6±2.7 cm -1 , respectively. We have observed that the characteristic temperature T 0 ranges from 132 to 89 K and DEQE shows an almost stable tendency with increase of temperature. A temperature coefficient of 0.049 nm K -1 is also found for the GaN/AlGaN MQW laser diode. The results for the AlGaN-based laser diodes grown on high-quality AlGaN films presented here will be essential for the future development of laser diodes emitting much shorter wavelengths.
Direct diode lasers with comparable beam quality to fiber, CO2, and solid state lasers
Huang, Robin K.; Chann, Bien; Burgess, James; Kaiman, Michael; Overman, Robert; Glenn, John D.; Tayebati, Parviz
2012-03-01
TeraDiode has produced kW-class ultra-high brightness fiber-coupled direct diode lasers. A fiber-coupled direct diode laser with a power level of 2,040 W from a 50 μm core diameter, 0.15 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.75 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 2-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers.
Hybrid simulation of electrode plasmas in high-power diodes
International Nuclear Information System (INIS)
Welch, Dale R.; Rose, David V.; Bruner, Nichelle; Clark, Robert E.; Oliver, Bryan V.; Hahn, Kelly D.; Johnston, Mark D.
2009-01-01
New numerical techniques for simulating the formation and evolution of cathode and anode plasmas have been successfully implemented in a hybrid code. The dynamics of expanding electrode plasmas has long been recognized as a limiting factor in the impedance lifetimes of high-power vacuum diodes and magnetically insulated transmission lines. Realistic modeling of such plasmas is being pursued to aid in understanding the operating characteristics of these devices as well as establishing scaling relations for reliable extrapolation to higher voltages. Here, in addition to kinetic and fluid modeling, a hybrid particle-in-cell technique is described that models high density, thermal plasmas as an inertial fluid which transitions to kinetic electron or ion macroparticles above a prescribed energy. The hybrid technique is computationally efficient and does not require resolution of the Debye length. These techniques are first tested on a simple planar diode then applied to the evolution of both cathode and anode plasmas in a high-power self-magnetic pinch diode. The impact of an intense electron flux on the anode surface leads to rapid heating of contaminant material and diode impedance loss.
International Nuclear Information System (INIS)
Gautier-Thianche, Emmmanuelle
1998-01-01
We study sandwich type semiconducting polymer light emitting diodes; anode/polymer/cathode. ITO is selected as anode, this polymer is a blend of a commercially available polymer with a high hole transport ability: polyvinyl-carbazole and a laser dye: coumarin-515. Magnesium covered with silver is chosen for the anode. We study the influence of polymer thickness and coumarin doping ratio on electroluminescence spectrum, electric characteristics and quantum efficiency. An important drawback is that diodes lifetime remains low. In the second part of our study we determine degradations causes with X-Ray reflectivity experiments. It may be due to ITO very high roughness. We realize a new type of planar electroluminescent device: a channel type electroluminescent device in which polymer layer is inserted into an aluminium channel. Such a device is by far more stable than using classical sandwich structures with the same polymer composition: indeed, charges are generated by internal-field ionization and there is no injection from the electrode to the polymer. This avoids electrochemical reactions at electrodes, thus reducing degradations routes. (author) [fr
Computer-assisted experiments with a laser diode
Energy Technology Data Exchange (ETDEWEB)
Kraftmakher, Yaakov, E-mail: krafty@mail.biu.ac.il [Department of Physics, Bar-Ilan University, Ramat-Gan 52900 (Israel)
2011-05-15
A laser diode from an inexpensive laser pen (laser pointer) is used in simple experiments. The radiant output power and efficiency of the laser are measured, and polarization of the light beam is shown. The h/e ratio is available from the threshold of spontaneous emission. The lasing threshold is found using several methods. With a data-acquisition system, the measurements are possible in a short time. The frequency response of the laser diode is determined in the range 10-10{sup 7} Hz. The experiments are suitable for undergraduate laboratories and for classroom demonstrations on semiconductors.
Computer-assisted experiments with a laser diode
International Nuclear Information System (INIS)
Kraftmakher, Yaakov
2011-01-01
A laser diode from an inexpensive laser pen (laser pointer) is used in simple experiments. The radiant output power and efficiency of the laser are measured, and polarization of the light beam is shown. The h/e ratio is available from the threshold of spontaneous emission. The lasing threshold is found using several methods. With a data-acquisition system, the measurements are possible in a short time. The frequency response of the laser diode is determined in the range 10-10 7 Hz. The experiments are suitable for undergraduate laboratories and for classroom demonstrations on semiconductors.
Equilibrium double layers in extended Pierce diodes
International Nuclear Information System (INIS)
Ciubotariu-Jassy, C.I.
1992-01-01
The extended Pierce diode is similar to the standard (or classical) Pierce diode, but has passive circuit elements in place of the short circuit between the electrodes. This device is important as an approximation to real bounded plasma systems. It consists of two parallel plane electrodes (an emitter located at x=0 and a collector located at x=l) and a collisionless cold electron beam travelling between them. The electrons are neutralized by a background of comoving massive ions. This situation is analysed in this paper and new equilibrium double layer (DL) plasma structures are obtained. (author) 6 refs., 3 figs
Diode and method of making the same
Energy Technology Data Exchange (ETDEWEB)
Dickerson, Jeramy Ray; Wierer, Jr., Jonathan; Kaplar, Robert; Allerman, Andrew A.
2018-03-13
A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor element over the second semiconductor layer. The third semiconductor layer additionally includes a second semiconductor element over the second semiconductor layer, wherein the second semiconductor element surrounds the first semiconductor element. Further, the third semiconductor layer includes a third semiconductor element over the second semiconductor element. Furthermore, a hole concentration of the second semiconductor element is less than a hole concentration of the first semiconductor element.
Effect of cathode and anode plasma motion on current characteristics of pinch diode
International Nuclear Information System (INIS)
Yang Hailiang; Qiu Aici; Sun Jianfeng; Li Jingya; He Xiaoping; Tang Junping; Li Hongyu; Wang Haiyang; Huang Jianjun; Ren Shuqing; Yang Li; Zou Lili
2005-01-01
The preliminary research results for the effect of cathode and anode plasma motion on current characteristics of the pinch ion diode on FLASH II accelerator are reported. The structure and principle of pinch reflex ion beam diode are introduced. The time dependent evolution of electron and ion flow in large aspect-ratio relativistic diodes is studied by analytic models. The equation of Child-langmuir, weak focused-flow, strong focused-flow and parapotential flow are corrected to reduce the diode A-C gap caused by the motion of cathode and anode plasma. The diode current and ion current are calculated with these corrected equations, and the results are consistent with the experimental data. The methods of increasing ion current and efficiency are also presented. The high power ion beam peak current about 160 kA with a peak energy about 500 keV was produced using water-dielectric transmission-line generators with super-pinch reflex ion diodes on FLASH II accelerator at Northwest Institute of Nuclear Technology (NINT). (authors)
Quantitative Detection of Combustion Species using Ultra-Violet Diode Lasers
Pilgrim, J. S.; Peterson, K. A.
2001-01-01
Southwest Sciences is developing a new microgravity combustion diagnostic based on UV diode lasers. The instrument will allow absolute concentration measurements of combustion species on a variety of microgravity combustion platforms including the Space Station. Our approach uses newly available room temperature UV diode lasers, thereby keeping the instrument compact, rugged and energy efficient. The feasibility of the technique was demonstrated by measurement of CH radicals in laboratory flames. Further progress in fabrication technology of UV diode lasers at shorter wavelengths and higher power will result in detection of transient species in the deeper UV. High sensitivity detection of combustion radicals is provided with wavelength modulation absorption spectroscopy.
Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes
Aydin, H.; Bacaksiz, C.; Yagmurcukardes, N.; Karakaya, C.; Mermer, O.; Can, M.; Senger, R. T.; Sahin, H.; Selamet, Y.
2018-01-01
We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1‧:3″-terphenyl-5‧ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1‧:3‧1‧-terphenyl-5‧ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current-voltage (I-V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)-V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (Rs) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π-π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.
Particle beam dynamics in a magnetically insulated coaxial diode
International Nuclear Information System (INIS)
Korenev, V.G.; Magda, I.I.; Sinitsin, V.G.
2015-01-01
The dynamics of charged particle beams emitted from a cathode into a smooth coaxial diode with magnetic insulation is studied with the aid of 3-D PIC simulation. The processes controlling space charge formation and its evolution in the diode are modeled for geometries typical of high-voltage millimeter wave magnetrons that are characterized by very high values of emission currents, hence high space charge densities.
High temperature semiconductor diode laser pumps for high energy laser applications
Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel
2018-02-01
Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.
Distributed-feedback single heterojunction GaAs diode laser
International Nuclear Information System (INIS)
Scifres, D.R.; Burnham, R.D.; Streifer, W.
1974-01-01
Laser operation of single-heterojunction GaAl As/GaAs diode lasers using a periodic structure within the gain medium of the device, thereby obviating the need for carefully cleaved end crystal faces to produce feedback, is reported. By varying the grating period, wavelengths from 8430 to 8560 A were observed. The threshold current densities were of the same order as for normal single heterojunction diode lasers. Some advantages in output wavelengths were observed over lasers with cleared faces. (U.S.)
Determination of reference data of REB diodes by using a numerical method for different applications
International Nuclear Information System (INIS)
Sinman, S.; Sinman, A.
1982-01-01
In this study, some reference data of a REB diode are presented functionally. These given characteristics are consisted of the computational results. Generally the numerical scheme depends upon the essential parameters of the charged transmission line and Child-Langmuir's diode model. By this system, further the correlation functions, some other definite functions such as the voltage of transmission line Vsub(L)(t), the diode voltage Vsub(d)(t), the diode current Isub(d)(t), the diode impedance Rsub(d)(t), the diode input power Wsub(d)(t), the dissipated energy Usub(d)(t), the efficiency phi, the beam density nsub(b)(t), the relativistic beam energy Usub(b)(t), and the intrinsic impedance Zsub(int)(t) have also been investigated. (author)
Features of space-charge-limited emission in foil-less diodes
Energy Technology Data Exchange (ETDEWEB)
Wu, Ping; Yuan, Keliang; Liu, Guozhi [Department of Engineering Physics, Tsinghua University, Beijing 100084 (China); Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi' an 710024 (China); Sun, Jun [Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi' an 710024 (China)
2014-12-15
Space-charge-limited (SCL) current can always be obtained from the blade surface of annular cathodes in foil-less diodes which are widely used in O-type relativistic high power microwave generators. However, there is little theoretical analysis regarding it due to the mathematical complexity, and almost all formulas about the SCL current in foil-less diodes are based on numerical simulation results. This paper performs an initial trial in calculation of the SCL current from annular cathodes theoretically under the ultra-relativistic assumption and the condition of infinitely large guiding magnetic field. The numerical calculation based on the theoretical research is coherent with the particle-in-cell (PIC) simulation result to some extent under a diode voltage of 850 kV. Despite that the theoretical research gives a much larger current than the PIC simulation (41.3 kA for the former and 9.7 kA for the latter), which is induced by the ultra-relativistic assumption in the theoretical research, they both show the basic characteristic of emission from annular cathodes in foil-less diodes, i.e., the emission enhancement at the cathode blade edges, especially at the outer edge. This characteristic is confirmed to some extent in our experimental research of cathode plasma photographing under the same diode voltage and a guiding magnetic field of 4 T.
International Nuclear Information System (INIS)
Streifer, W.
1988-01-01
This paper discusses the principles of operation of III-V semiconductor diode lasers, the use of distributed feedback, and high power laser arrays. The semiconductor laser is a robust, miniature, versatile device, which directly converts electricity to light with very high efficiency. Applications to pumping solid-state lasers and to fiber optic and point-to-point communications are reviewed
Radiation monitoring with CVD diamonds and PIN diodes at BaBar
Energy Technology Data Exchange (ETDEWEB)
Bruinsma, M. [University of California Irvine, Irvine, CA 92697 (United States); Burchat, P. [Stanford University, Stanford, CA 94305-4060 (United States); Curry, S. [University of California Irvine, Irvine, CA 92697 (United States)], E-mail: scurry@slac.stanford.edu; Edwards, A.J. [Stanford University, Stanford, CA 94305-4060 (United States); Kagan, H.; Kass, R. [Ohio State University, Columbus, OH 43210 (United States); Kirkby, D. [University of California Irvine, Irvine, CA 92697 (United States); Majewski, S.; Petersen, B.A. [Stanford University, Stanford, CA 94305-4060 (United States)
2007-12-11
The BaBar experiment at the Stanford Linear Accelerator Center has been using two polycrystalline chemical vapor deposition (pCVD) diamonds and 12 silicon PIN diodes for radiation monitoring and protection of the Silicon Vertex Tracker (SVT). We have used the pCVD diamonds for more than 3 years, and the PIN diodes for 7 years. We will describe the SVT and SVT radiation monitoring system as well as the operational difficulties and radiation damage effects on the PIN diodes and pCVD diamonds in a high-energy physics environment.
The Effect of Diode Laser With Different Parameters on Root Fracture During Irrigation Procedure.
Karataş, Ertuğrul; Arslan, Hakan; Topçuoğlu, Hüseyin Sinan; Yılmaz, Cenk Burak; Yeter, Kübra Yesildal; Ayrancı, Leyla Benan
2016-06-01
The aim of this study is to compare the effect of a single diode laser application and agitation of EDTA with diode laser with different parameters at different time intervals on root fracture. Ninety mandibular incisors were instrumented except the negative control group. The specimens were divided randomly into 10 groups according to final irrigation procedure: (G1) non-instrumented; (G2) distilled water; (G3) 15% EDTA; (G4) ultrasonically agitated EDTA; (G5) single 1.5W/100 Hz Diode laser; (G6) single 3W/100 Hz Diode laser; (G7) 1.5W/100 Hz Diode laser agitation of EDTA for 20 s; (G8) 1.5W/100 Hz Diode laser agitation of EDTA for 40 s; (G9) 3W/100 Hz Diode laser agitation of EDTA for 20 s; and (G10) 3W/100 Hz Diode laser agitation of EDTA for 40 s. The specimens were filled, mounted in acrylic resin, and compression strength test was performed on each specimen. Statistical analysis was carried out using one way ANOVA and Tukey's post hoc tests (P = 0.05). The statistical analysis revealed that there were statistically significant differences among the groups (P Laser-agitated irrigation with a 3W/100 Hz Diode laser for both 20 s and 40 s decreased the fracture resistance of teeth. Copyright © 2015 International Center for Artificial Organs and Transplantation and Wiley Periodicals, Inc.
Advancements of ultra-high peak power laser diode arrays
Crawford, D.; Thiagarajan, P.; Goings, J.; Caliva, B.; Smith, S.; Walker, R.
2018-02-01
Enhancements of laser diode epitaxy in conjunction with process and packaging improvements have led to the availability of 1cm bars capable of over 500W peak power at near-infrared wavelengths (770nm to 1100nm). Advances in cooler design allow for multi-bar stacks with bar-to-bar pitches as low as 350μm and a scalable package architecture enabled a single diode assembly with total peak powers of over 1MegaWatt of peak power. With the addition of micro-optics, overall array brightness greater than 10kW/cm2 was achieved. Performance metrics of barbased diode lasers specifically engineered for high peak power and high brightness at wavelengths and pulse conditions commonly used to pump a variety of fiber and solid-state materials are presented.
Controlling the emission wavelength in group III-V semiconductor laser diodes
Ooi, Boon S.; Majid, Mohammed Abdul; Afandy, Rami; Aljabr, Ahmad
2016-01-01
Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III
Influence of the anisotropy on the performance of D-band SiC IMPATT diodes
Chen, Qing; Yang, Lin'an; Wang, Shulong; Zhang, Yue; Dai, Yang; Hao, Yue
2015-03-01
Numerical simulation has been made to predict the RF performance of direction and direction p+/n/n-/n+ (single drift region) 4H silicon carbide (4H-SiC) impact-ionization-avalanche-transit-time (IMPATT) diodes for operation at D-band frequencies. We observed that the output performance of 4H-SiC IMPATT diode is sensitive to the crystal direction of the one-dimensional current flow. The simulation results show that direction 4H-SiC IMPATT diode provides larger breakdown voltage for its lower electron and hole ionization rates and higher dc-to-rf conversion efficiency (η) for its higher ratio of drift zone voltage drop (VD) to breakdown voltage (VB) compared with those for direction 4H-SiC IMPATT diode, which lead to higher-millimeter-wave power output for direction 4H-SiC IMPATT compared to direction. However, the quality factor Q for the direction 4H-SiC IMPATT diode is lower than that of direction, which implies that the direction 4H-SiC IMPATT diode exhibits better stability and higher growth rate of microwave oscillation compared with direction 4H-SiC IMPATT diode.
Role of noise in the diode-laser spectroscopy of the spectral line profile
International Nuclear Information System (INIS)
Nadezhdinskii, Aleksandr I; Plotnichenko, V V; Ponurovskii, Ya Ya; Spiridonov, Maksim V
2000-01-01
Questions concerning precise measurements of the spectral-line-profile parameters by diode-laser spectroscopic methods were examined. The instrumental function of a distributed-feedback diode laser (λ =1.53 μm), consisting of the additive contributions of the noise due to spontaneous emission, frequency fluctuations, and intensity fluctuations, was investigated. An analytical formula was obtained for the spectrum of the diode-laser field formed by frequency fluctuations. The spectral density g 0 of the frequency fluctuations, determining the width of the central part of the emission line profile of a diode laser, was found by two independent methods (by fitting to a Doppler-broadened absorption line profile and by finding the intensity of the residual radiation and the saturated-absorption line width). The parameters Ω and Γ of the spectral density of the frequency fluctuations, coupled to the relaxation oscillations and determining the wing of the diode-laser emission line profile, were determined experimentally. By taking into account the instrumental function of the diode laser, involving successive convolution with the recorded emission spectra, it was possible to reproduce correctly the spectral line profile and to solve accurately the problem of the 'optical zero'. The role of the correlation between the intensity noise and the diode-laser frequency was considered. (laser applications and other topics in quantum electronics)
Contribution of the backstreaming ions to the self-magnetic pinch (SMP) diode current
Mazarakis, Michael G.; Bennett, Nichelle; Cuneo, Michael E.; Fournier, Sean D.; Johnston, Mark D.; Kiefer, Mark L.; Leckbee, Joshua J.; Nielsen, Dan S.; Oliver, Bryan V.; Sceiford, Matthew E.; Simpson, Sean C.; Renk, Timothy J.; Ruiz, Carlos L.; Webb, Timothy J.; Ziska, Derek; Droemer, Darryl W.; Gignac, Raymond E.; Obregon, Robert J.; Wilkins, Frank L.; Welch, Dale R.
2018-04-01
The results presented here were obtained with a self-magnetic pinch (SMP) diode mounted at the front high voltage end of the RITS accelerator. RITS is a Self-Magnetically Insulated Transmission Line (MITL) voltage adder that adds the voltage pulse of six 1.3 MV inductively insulated cavities. The RITS driver together with the SMP diode has produced x-ray spots of the order of 1 mm in diameter and doses adequate for the radiographic imaging of high area density objects. Although, through the years, a number of different types of radiographic electron diodes have been utilized with SABER, HERMES III and RITS accelerators, the SMP diode appears to be the most successful and simplest diode for the radiographic investigation of various objects. Our experiments had two objectives: first to measure the contribution of the back-streaming ion currents emitted from the anode target and second to try to evaluate the energy of those ions and hence the Anode-Cathode (A-K) gap actual voltage. In any very high voltage inductive voltage adder utilizing MITLs to transmit the power to the diode load, the precise knowledge of the accelerating voltage applied on the A-K gap is problematic. This is even more difficult in an SMP diode where the A-K gap is very small (˜1 cm) and the diode region very hostile. The accelerating voltage quoted in the literature is from estimates based on the measurements of the anode and cathode currents of the MITL far upstream from the diode and utilizing the para-potential flow theories and inductive corrections. Thus, it would be interesting to have another independent measurement to evaluate the A-K voltage. The diode's anode is made of a number of high-Z metals in order to produce copious and energetic flash x-rays. It was established experimentally that the back-streaming ion currents are a strong function of the anode materials and their stage of cleanness. We have measured the back-streaming ion currents emitted from the anode and propagating
International Nuclear Information System (INIS)
1976-01-01
The liquid diode is designed for a flowmeter chamber which has an inlet and an outlet duct, and a flow chamber with a cross-section which is greater than inlet. In the space between the inlet and outlet are two screens with a number of spheres, which may be of different sizes and weights. The screen on the inlet side is smaller than that at the outlet, so that the spheres are able to block the inlet under reverse flow conditions, but do not block the outlet. The system functions as a non-return valve. (G.C.)
Measurements of Γ(ZO → b bar b)/Γ(ZO → hadrons) using the SLD
International Nuclear Information System (INIS)
Neal, H.A. Jr. II.
1995-07-01
The quantity R b = Γ(Z o →b bar b)/Γ(Z o → hadrons) is a sensitive measure of corrections to the Zbb vertex. The precision necessary to observe the top quark mass dependent corrections is close to being achieved. LEP is already observing a 1.8σ deviation from the Standard Model prediction. Knowledge of the top quark mass combined with the observation of deviations from the Standard Model prediction would indicate new physics. Models which include charged Higgs or light SUSY particles yield predictions for R b appreciably different from the Standard Model. In this thesis two independent methods are used to measure R b . One uses a general event tag which determines R b from the rate at which events are tagged as Z o → b bar b in data and the estimated rates at which various flavors of events are tagged from the Monte Carlo. The second method reduces the reliance on the Monte Carlo by separately tagging each hemisphere as containing a b-decay. The rates of single hemisphere tagged events and both hemisphere tagged events are used to determine the tagging efficiency for b-quarks directly from the data thus eliminating the main sources of systematic error present in the event tag. Both measurements take advantage of the unique environment provided by the SLAC Linear Collider (SLC) and the SLAC Large Detector (SLD). From the event tag a result of R b = 0.230±0.004 statistical ±0.013 systematic is obtained. The higher precision hemisphere tag result obtained is R b = 0.218±0.004 statistical ±0.004 systematic ±0.003 Rc
Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes
International Nuclear Information System (INIS)
Tabe, Michiharu; Tan, Hoang Nhat; Mizuno, Takeshi; Muruganathan, Manoharan; Anh, Le The; Mizuta, Hiroshi; Nuryadi, Ratno; Moraru, Daniel
2016-01-01
We study low-temperature transport properties of two-dimensional (2D) Si tunnel diodes, or Si Esaki diodes, with a lateral layout. In ordinary Si Esaki diodes, interband tunneling current is severely limited because of the law of momentum conservation, while nanoscale Esaki diodes may behave differently due to the dopants in the narrow depletion region, by atomistic effects which release such current limitation. In thin-Si lateral highly doped pn diodes, we find clear signatures of interband tunneling between 2D-subbands involving phonon assistance. More importantly, the tunneling current is sharply enhanced in a narrow voltage range by resonance via a pair of a donor- and an acceptor-atom in the pn junction region. Such atomistic behavior is recognized as a general feature showing up only in nanoscale tunnel diodes. In particular, a donor-acceptor pair with deeper ground-state energies is likely to be responsible for such a sharply enhanced current peak, tunable by external biases.
Development of a high and low impedance diode testing facility at AWE Aldermaston
International Nuclear Information System (INIS)
Sinclair, M.; Aedy, Ch.; Cooper, G.
2005-01-01
To meet the future resolution targets for radiography of hydrodynamic experiments is creating a dedicated Diode Research Facility. To perform low impedance diode research, the X-ray simulator Eros has been acquired. To drive the high impedance diodes the EMU machine will be co-located with Eros. The co-located of machines will facilitate the sharing of plasma and X-ray diagnostics [ru
Electron beam characterization of a combined diode rf electron gun
Directory of Open Access Journals (Sweden)
R. Ganter
2010-09-01
Full Text Available Experimental and simulation results of an electron gun test facility, based on pulsed diode acceleration followed by a two-cell rf cavity at 1.5 GHz, are presented here. The main features of this diode-rf combination are: a high peak gradient in the diode (up to 100 MV/m obtained without breakdown conditioning, a cathode shape providing an electrostatic focusing, and an in-vacuum pulsed solenoid to focus the electron beam between the diode and the rf cavity. Although the test stand was initially developed for testing field emitter arrays cathodes, it became also interesting to explore the limits of this electron gun with metallic photocathodes illuminated by laser pulses. The ultimate goal of this test facility is to fulfill the requirements of the SwissFEL project of Paul Scherrer Institute [B. D. Patterson et al., New J. Phys. 12, 035012 (2010NJOPFM1367-263010.1088/1367-2630/12/3/035012]; a projected normalized emittance below 0.4 μm for a charge of 200 pC and a bunch length of less than 10 ps (rms. A normalized projected emittance of 0.23 μm with 13 pC has been measured at 5 MeV using a Gaussian laser longitudinal intensity distribution on the photocathode. Good agreements with simulations have been obtained for different electron bunch charge and diode geometries. Emittance measurements at a bunch charge below 1 pC were performed for different laser spot sizes in agreement with intrinsic emittance theory [e.g. 0.54 μm/mm of laser spot size (rms for Cu at 274 nm]. Finally, a projected emittance of 1.25+/-0.2 μm was measured with 200 pC and 100 MV/m diode gradient.
Spectral beam combining of diode lasers with high efficiency
DEFF Research Database (Denmark)
Müller, André; Vijayakumar, Deepak; Jensen, Ole Bjarlin
2012-01-01
Based on spectral beam combining we obtain 16 W of output power, combining two 1063 nm DBR-tapered diode lasers. The spectral separation within the combined beam can be used for subsequent sum-frequency generation.......Based on spectral beam combining we obtain 16 W of output power, combining two 1063 nm DBR-tapered diode lasers. The spectral separation within the combined beam can be used for subsequent sum-frequency generation....
Effect of inductance between middle and outer cylinders on diode voltage of pulse forming line
International Nuclear Information System (INIS)
Liu Jinliang; Wang Xinxin
2008-01-01
Based on the experimental device of the water spiral pulse forming line(PFL) type electron beam accelerator, the effect of inductance between the middle and outer cylinders of PFL on diode voltage is theoretically and experimentally studied in this paper. The formulae are introduced, with which the effect of inductance on diode voltage is calculated. In addition, the diode voltage waveform is simulated through the Pspice software. The theoretical and simulated results agree well with the experimental results, which show that large inductance between middle and outer cylinders can shorten the waveform flat part of diode voltage, increase waveform rise time and reduce the diode peak voltage. When the inductance is smaller than 200 nH, a nearly square voltage waveform can be obtained in field-emission diode. (authors)
Local mechanical stress relaxation of Gunn diodes irradiated by protons
International Nuclear Information System (INIS)
Gradoboev, A V; Tesleva, E P
2017-01-01
The aim of the work is studying the impact of Gunn diodes thermocompression bonding conditions upon their resistance to being radiated with protons of various energies. It was established that the tough conditions of Gunn diodes thermocompression bonding results in local mechanic stresses introduced into the active layer of the device, reduction of electron mobility because of the faults introduction and, subsequently, to reduction of operating current, power of UHF generation, percentage of qualitative units production and general reduction of production efficiency of the devices with required characteristics. Irradiation of Gunn diodes produced under the tough conditions of thermocompression bonding with protons which energy is (40–60) MeV with an absorbed dose of (1–6)·10 2 Gy does not practically reduce the radiation resistance of Gunn diodes produced with application of the given technique. This technique can be recommended for all semiconductor devices on the base of GaAs, which parameters depend significantly upon the mobility of the electrons, to increase the efficiency of production. (paper)
Temperature effect on protection diode for plasma-process induced charging damage
Wang, Zhichun; Scarpa, A.; Smits, Sander M.; Kuper, F.G.; Salm, Cora
2002-01-01
In this paper, the leakage current of different drain-well diodes for plasma-charging protection has been simulated at high temperature. The simulation shows that the high ambient temperature, especially during plasma deposition process, enormously enhances the efficacy of the protection diodes in
Plasma-filled diode experiments on PBFA-II
International Nuclear Information System (INIS)
Renk, T.J.; Rochau, G.E.; McDaniel, D.H.; Moore, W.B.; Zuchowski, N.; Padilla, R.
1987-01-01
The PBFA-II accelerator is designed to use a Plasma Opening Switch (POS) for pulse shaping and voltage multiplication using inductive storage. The vacuum section of the machine consists of a set of short magnetically insulated transmission lines (MITLs) that both act as a voltage adder for series stacking of the pulses out of the 72 parallel plate water lines, and as a 100 nH (total) storage inductor upstream of a biconically shaped POS region. There are two POS plasma injection areas, located above and below an equatorial load, which has consisted of either a short circuit, a blade (electron beam) diode, or an Applied B magnetically insulated ion diode. The POS is designed to conduct up to 6 MA, and open into a 5 ohm diode load in 10 ns or less. Under these conditions, the voltage at the load is predicted to exceed 24 MV. Initial POS experiments using these loads have produced 1) opening times of typically 20 ns or longer, 2) poor current transfer efficiency (less than 50%) when load impedances averaged 2 ohms or more, and 3) differential switch opening in azimuthal segments of the power feed, thought to be caused by poor plasma uniformity across the flashboard plasma source. One possible explanation for 2) is that efficient transfer out of the POS requires that the current carried to the load be magnetically insulated, or else considerable energy will be deposited in the feed region between the POS and load. This had indeed been observed. The problem is further exacerbated by the longer current turn-on times that occur when an ion diode is used as the load
Ion production and bipolar fluxes in a high-current plasma-filled diode
International Nuclear Information System (INIS)
Ivanenkov, G.V.
1982-01-01
The model and the evolution of behaviour of binary layers (BL) in expanding plasma of high current plasma-filled diode are described. The model estimates ion current and the laws of plasma expansion at the stage of BL intensive growth. The density range (10 12 -10 15 cm -3 ) is determined in which diode impedance growth takes place in connection with BL appearance. The density of ion current at the outlet of diode is 10 A/cm 2
Diode-Pumped Thulium (Tm)/Holmium (Ho) Composite Fiber 2.1-Micrometers Laser
2015-09-01
Schematic of the 800-nm diode pumped Tm/Ho composite fiber laser 8 Under quasi-continuous wave (Q- CW ) pumping conditions of 1-ms duration and a...Fig. 9 (Top) Schematic of the 800-nm diode -pumped Tm/Ho composite fiber laser with outcoupler. (Left) Q- CW laser performance of the Tm/Ho composite...ARL-TR-7452 ● SEP 2015 US Army Research Laboratory Diode -Pumped Thulium (Tm)/Holmium (Ho) Composite Fiber 2.1-μm Laser by G
The effects of design parameters on vortex diode pump performance, 2
International Nuclear Information System (INIS)
Yoshitomi, Hideki; Koizumi, Tadao; Muroyama, Kenichi; Wada, Tsutomu.
1989-01-01
A fluidic pump with two vortex diodes is a new technology for transporting dangerous corrosive fluids without the use of moving parts. The pump can be connected with the discharge tank through series and cascade connections. In the previous report, we described the fundamentals and design criteria of the pump for the series connection case. This study has been performed with the same object as the previous work for the case of cascade connection. First, we present the basic pump characteristics with some dimensionless performance factors by analyzing the pump model. Then, the effects of the cylinder volumetric coefficient, driving pressure, suction-diode-to-delivery-diode-passage-area ratio and reverse-flow-to-forward-flow-resistance ratio of the vortex diode are investigated. As a result, the characteristic difference between series and cascade connections is clarified. Basic ways to decide the value of each performance factor are suggested. (author)
Diode Laser Excision of Oral Benign Lesions.
Mathur, Ena; Sareen, Mohit; Dhaka, Payal; Baghla, Pallavi
2015-01-01
Lasers have made tremendous progress in the field of dentistry and have turned out to be crucial in oral surgery as collateral approach for soft tissue surgery. This rapid progress can be attributed to the fact that lasers allow efficient execution of soft tissue procedures with excellent hemostasis and field visibility. When matched to scalpel, electrocautery or high frequency devices, lasers offer maximum postoperative patient comfort. Four patients agreed to undergo surgical removal of benign lesions of the oral cavity. 810 nm diode lasers were used in continuous wave mode for excisional biopsy. The specimens were sent for histopathological examination and patients were assessed on intraoperative and postoperative complications. Diode laser surgery was rapid, bloodless and well accepted by patients and led to complete resolution of the lesions. The excised specimen proved adequate for histopathological examination. Hemostasis was achieved immediately after the procedure with minimal postoperative problems, discomfort and scarring. We conclude that diode lasers are rapidly becoming the standard of care in contemporary dental practice and can be employed in procedures requiring excisional biopsy of oral soft tissue lesions with minimal problems in histopathological diagnosis.
Optimum design for 12 MeV linear induction accelerator diode
International Nuclear Information System (INIS)
Yu Haijun; Shi Jinshui; Li Qin; He Guorong; Ma Bing; Wang Jingsheng; Wang Liping
2001-01-01
A series of optimization designs of electron diode in 12 Mev linear induction accelerator are studied by using numerical simulation code MAGIC and experiment method in order to improve the electron beam quality. MAGIC code solves the Maxwell equations in the presence of charged particle, electron field distribution on cathode surface which influences electron emission is given, the optimum diode is obtained by comparing the results of experiment in 12 MeV linear induction accelerator. The author also gives SEM analysis and experiment comparison of velvet emission. Finally, emitted current I e = 8.52 kA, beam current I 8 ≥ 3.0 kA, targeted current I 0 ≥ 2.30 kA with optimum diode are obtained
Diode-pumped glass laser (10 J X 10 HZ) development
International Nuclear Information System (INIS)
Tadashi Kanabe; Toshiyuki Kawashima; Masanobu Yamanaka; Masahiro Nakatsuka; Yasukazu Izawa; Takeshi Kanzaki; Hirofumi Kan; Sadao Nakai
2002-01-01
A high-energy, high beam quality, diode-pumped 1053-nm Nd:phosphate glass laser amplifier has been demonstrated in order to verify the conceptual design of HALNA (High Average-power Laser for Nuclear-fusion Application): a diode-pumped solid-state laser based on a water-cooled zig-zag slab optical geometry. This amplifier yielded 8.5 J output energy per pulse at 0.5 Hz in a 20 ns pulse of two times the diffraction limit beam quality with an optical-to-optical conversion efficiency of 10.9%. The experimental results revealed that the primary requirements for the IFE driver, such as diode-pumping, energy storage and extraction efficiencies, and beam quality have been fulfilled
Response of CMS avalanche photo-diodes to low energy neutrons
Brown, R. M.; Deiters, K.; Ingram, Q.; Renker, D.
2012-12-01
The response of the Avalanche Photo-diodes (APDs) installed in the CMS detector at the LHC to neutrons from 241AmBe and 252Cf sources is reported. Signals in size equivalent to those of up to 106 photo-electrons with the nominal APD gain are observed. Measurements with an APD with the protective epoxy coating removed and with the source placed behind the APD show that there is an important response due to recoil protons from neutron interactions with the hydrogen in the epoxy, in addition to signals from neutron interactions with the silicon of the diode. The effective gain of these signals is much smaller than the diode's nominal gain.
Diode laser-pumped Ho:YLF laser
International Nuclear Information System (INIS)
Hemmati, H.
1987-01-01
The author reports laser action in Ho:YLF at 2.06 μm following optical pumping with a cw diode laser array. Diode laser-pumped Nd-YAG and Ho:YAG have been reported recently. Lasers with a wavelength of 2 μm have medical and optical communication applications. The diode laser light is focused with a 60-mm focal length lens onto the YLF crystal. A high-reflectivity mirror with 100-mm radius of curvature was used as the output coupler. The lasing threshold was at 5 mWof incident power. This is higher than expected considering that a high reflector was used as the output coupler. However, a more uniform cooling of the crystal is expected to lower the lasing threshold. With 100 mW of pump power coupled into the crystal, --20 mW of 2-μm radiation was observed from this unoptimized setup. The 2-μm laser output is highly sensitive to output coupler alignment, YLF crystal temperature, and pump laser wavelength. The 20% optical conversion efficiency achieved in his preliminary measurements is expected to be improved by better crystal cooling, proper matching of laser wavelength to crystal absorption, variations in the concentration of Ho and sensitizers and use of a proper output coupler. A study of the parameters mentioned above and the effect of crystal temperature on the laser output is under way
Fluctuations of the peak current of tunnel diodes in multi-junction solar cells
International Nuclear Information System (INIS)
Jandieri, K; Baranovskii, S D; Stolz, W; Gebhard, F; Guter, W; Hermle, M; Bett, A W
2009-01-01
Interband tunnel diodes are widely used to electrically interconnect the individual subcells in multi-junction solar cells. Tunnel diodes have to operate at high current densities and low voltages, especially when used in concentrator solar cells. They represent one of the most critical elements of multi-junction solar cells and the fluctuations of the peak current in the diodes have an essential impact on the performance and reliability of the devices. Recently we have found that GaAs tunnel diodes exhibit extremely high peak currents that can be explained by resonant tunnelling through defects homogeneously distributed in the junction. Experiments evidence rather large fluctuations of the peak current in the diodes fabricated from the same wafer. It is a challenging task to clarify the reason for such large fluctuations in order to improve the performance of the multi-junction solar cells. In this work we show that the large fluctuations of the peak current in tunnel diodes can be caused by relatively small fluctuations of the dopant concentration. We also show that the fluctuations of the peak current become smaller for deeper energy levels of the defects responsible for the resonant tunnelling.
Modification of diode characteristics by electron back-scatter from high-atomic-number anodes
International Nuclear Information System (INIS)
Mosher, D.; Cooperstein, G.; Rose, D.V.; Swanekamp, S.B.
1996-01-01
In high-power vacuum diodes with high-atomic-number anodes, back-scattered electrons alter the vacuum space charge and resulting electron and ion currents. Electron multiple back-scattering was studied through equilibrium solutions of the Poisson equation for 1-dimensional, bipolar diodes in order to predict their early-time behavior. Before ion turn-on, back-scattered electrons from high-Z anodes suppress the diode current by about 10%. After ion turn-on in the same diodes, electron back-scatter leads to substantial enhancements of both the electron and ion currents above the Child-Langmuir values. Current enhancements with ion flow from low-Z anodes are small. (author). 5 figs., 7 refs
Modification of diode characteristics by electron back-scatter from high-atomic-number anodes
Energy Technology Data Exchange (ETDEWEB)
Mosher, D; Cooperstein, G [Naval Research Laboratory, Washington, DC (United States); Rose, D V; Swanekamp, S B [JAYCOR, Vienna, VA (United States)
1997-12-31
In high-power vacuum diodes with high-atomic-number anodes, back-scattered electrons alter the vacuum space charge and resulting electron and ion currents. Electron multiple back-scattering was studied through equilibrium solutions of the Poisson equation for 1-dimensional, bipolar diodes in order to predict their early-time behavior. Before ion turn-on, back-scattered electrons from high-Z anodes suppress the diode current by about 10%. After ion turn-on in the same diodes, electron back-scatter leads to substantial enhancements of both the electron and ion currents above the Child-Langmuir values. Current enhancements with ion flow from low-Z anodes are small. (author). 5 figs., 7 refs.
Ultra-narrow band diode lasers with arbitrary pulse shape modulation (Conference Presentation)
Ryasnyanskiy, Aleksandr I.; Smirnov, Vadim; Mokhun, Oleksiy; Glebov, Alexei L.; Glebov, Leon B.
2017-03-01
Wideband emission spectra of laser diode bars (several nanometers) can be largely narrowed by the usage of thick volume Bragg gratings (VBGs) recorded in photo-thermo-refractive glass. Such narrowband systems, with GHz-wide emission spectra, found broad applications for Diode Pumped Alkali vapor Lasers, optically pumped rare gas metastable lasers, Spin Exchange Optical Pumping, atom cooling, etc. Although the majority of current applications of narrow line diode lasers require CW operation, there are a variety of fields where operation in a different pulse mode regime is necessary. Commercial electric pulse generators can provide arbitrary current pulse profiles (sinusoidal, rectangular, triangular and their combinations). The pulse duration and repetition rate however, have an influence on the laser diode temperature, and therefore, the emitting wavelength. Thus, a detailed analysis is needed to understand the correspondence between the optical pulse profiles from a diode laser and the current pulse profiles; how the pulse profile and duty cycle affects the laser performance (e.g. the wavelength stability, signal to noise ratio, power stability etc.). We present the results of detailed studies of the narrowband laser diode performance operating in different temporal regimes with arbitrary pulse profiles. The developed narrowband (16 pm) tunable laser systems at 795 nm are capable of operating in different pulse regimes while keeping the linewidth, wavelength, and signal-to-noise ratio (>20 dB) similar to the corresponding CW modules.
3.1 W narrowband blue external cavity diode laser
Peng, Jue; Ren, Huaijin; Zhou, Kun; Li, Yi; Du, Weichuan; Gao, Songxin; Li, Ruijun; Liu, Jianping; Li, Deyao; Yang, Hui
2018-03-01
We reported a high-power narrowband blue diode laser which is suitable for subsequent nonlinear frequency conversion into the deep ultraviolet (DUV) spectral range. The laser is based on an external cavity diode laser (ECDL) system using a commercially available GaN-based high-power blue laser diode emitting at 448 nm. Longitudinal mode selection is realized by using a surface diffraction grating in Littrow configuration. The diffraction efficiency of the grating was optimized by controlling the polarization state of the laser beam incident on the grating. A maximum optical output power of 3.1 W in continuous-wave operation with a spectral width of 60 pm and a side-mode suppression ratio (SMSR) larger than 10 dB at 448.4 nm is achieved. Based on the experimental spectra and output powers, the theoretical efficiency and output power of the subsequent nonlinear frequency conversion were calculated according to the Boyd- Kleinman theory. The single-pass conversion efficiency and output power is expected to be 1.9×10-4 and 0.57 mW, respectively, at the 3.1 W output power of the ECDL. The high-power narrowband blue diode laser is very promising as pump source in the subsequent nonlinear frequency conversion.
Spin-polarized light-emitting diodes based on organic bipolar spin valves
Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham
2017-10-25
Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.
High-brightness tapered laser diodes with photonic crystal structures
Li, Yi; Du, Weichuan; Kun, Zhou; Gao, Songxin; Ma, Yi; Tang, Chun
2018-02-01
Beam quality of tapered laser diodes is limited by higher order lateral mode. On purpose of optimizing the brightness of tapered laser diodes, we developed a novel design of tapered diodes. This devices based on InGaAs/AlGaAs asymmetry epitaxial structure, containing higher order lateral mode filtering schemes especially photonic crystal structures, which fabricated cost effectively by using standard photolithography and dry etch processes. Meanwhile, the effects of photonic crystal structures on mode control are also investigated theoretically by FDBPM (Finite-Difference Beam Propagation Method) calculation. We achieved a CW optical output power of 6.9W at 940nm for a single emitter with 4 mm cavity length. A nearly diffraction limited beam of M2 ≍1.9 @ 0.5W has been demonstrated, and a highest brightness of β =75MW/(cm2 ·sr) was reached.
Comparison of laser diode response to pulsed electrical and radiative excitations
International Nuclear Information System (INIS)
Baggio, J.; Rainsant, J.M.; D'hose, C.; Lalande, P.; Musseau, O.; Leray, J.L.
1996-01-01
The authors have studied the electrical and optical response of two laser diodes under transient irradiation. Both diodes exhibit a positive photocurrent, which adds to the bias current, and a decrease of the optical power until extinction when dose rate is increased. Direct carrier generation in the laser cavity is a second order phenomena. The diode overall response is driven by both the substrate photocurrent and the transient conduction of current confinement regions, which decrease the net current density in the cavity and switches-off the laser emission. This behavior is in good agreement with pulsed electrical characterizations and 2D simulations
Thick and large area PIN diodes for hard X-ray astronomy
Ota, N; Sugizaki, M; Kaneda, M; Tamura, T; Ozawa, H; Kamae, T; Makishima, K; Takahashi, T; Tashiro, M; Fukazawa, Y; Kataoka, J; Yamaoka, K; Kubo, S; Tanihata, C; Uchiyama, Y; Matsuzaki, K; Iyomoto, N; Kokubun, M; Nakazawa, T; Kubota, A; Mizuno, T; Matsumoto, Y; Isobe, N; Terada, Y; Sugiho, M; Onishi, T; Kubo, H; Ikeda, H; Nomachi, M; Ohsugi, T; Muramatsu, M; Akahori, H
1999-01-01
Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm sup 2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.
[Gas pipeline leak detection based on tunable diode laser absorption spectroscopy].
Zhang, Qi-Xing; Wang, Jin-Jun; Liu, Bing-Hai; Cai, Ting-Li; Qiao, Li-Feng; Zhang, Yong-Ming
2009-08-01
The principle of tunable diode laser absorption spectroscopy and harmonic detection technique was introduced. An experimental device was developed by point sampling through small multi-reflection gas cell. A specific line near 1 653. 7 nm was targeted for methane measurement using a distributed feedback diode laser as tunable light source. The linearity between the intensity of second harmonic signal and the concentration of methane was determined. The background content of methane in air was measured. The results show that gas sensors using tunable diode lasers provide a high sensitivity and high selectivity method for city gas pipeline leak detection.
High power diode lasers emitting from 639 nm to 690 nm
Bao, L.; Grimshaw, M.; DeVito, M.; Kanskar, M.; Dong, W.; Guan, X.; Zhang, S.; Patterson, J.; Dickerson, P.; Kennedy, K.; Li, S.; Haden, J.; Martinsen, R.
2014-03-01
There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT's released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.
Directory of Open Access Journals (Sweden)
Sangram Bana
2016-11-01
Full Text Available In order to predict the performance of a PV system, a reliable and accurate simulation design of PV systems before being installed is a necessity. The present study concerns the development of single and double diode model of solar PV system and ensures the best suited model under specific environmental condition for accurate performance prediction. The information provided in the manufacturers’ data sheet is not sufficient for developing a Simulink based single and double diode models of PV module. These parameters are crucial to predict accurate performance of a PV module. These parameters of the proposed solar PV models have been calculated using an efficient iterative technique. This paper compares the simulation results of both the models with manufacturer’s data sheet to investigate the accuracy and validity. A MATLAB/Simulink based comparative performance analysis of these models under inconsistent atmospheric conditions and the effect of variations in model parameters has been carried out. Despite the simplicity, these models are highly sensitive and respond to a slight variation in temperature and insolation. It is observed that double diode PV model is more accurate under low intensity insolation or shading condition. The performance evaluation of the models under present study will be helpful to understand the I-V curves, which will enable us in predicting the solar PV system power production under variable input conditions.
Photoresponse of poly(para-phenylenevinylene) light-emitting diodes
International Nuclear Information System (INIS)
Wei, X.; Raikh, M.; Vardeny, Z.V.; Yang, Y.; Moses, D.
1994-01-01
We have studied the photoresponses of poly(para-phenylene vinylene) (PPV) light-emitting diodes (LED's) with PPV derivatives sandwiched between tin oxide (ITO) and metals including calcium, aluminum, and copper. Under illumination all diodes exhibit relatively large photoconductive I(V) responses which cross the dark I(V) curve at a forward-bias voltage V 0 that scales with the difference in work functions between the ITO and metal electrodes, the open-circuit voltage saturates at V 0 and is temperature independent, and the enhanced electroluminescence intensity of the illuminated LED's correlates with the photocurrent
Degradation of light emitting diodes: a proposed methodology
International Nuclear Information System (INIS)
Koh, Sau; Vam Driel, Willem; Zhang, G.Q.
2011-01-01
Due to their long lifetime and high efficacy, light emitting diodes have the potential to revolutionize the illumination industry. However, self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode. In this research, a methodology to investigate the degradation of the LED emitter has been proposed. The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters. (semiconductor devices)
High-efficiency diode-pumped femtosecond Yb:YAG ceramic laser
DEFF Research Database (Denmark)
Zhou, Binbin; Wei, Z.Y.; Zou, Y.W.
2010-01-01
A highly efficient diode-end-pumped femtosecond Yb:yttrium aluminum garnet (YAG) ceramic laser was demonstrated. Pumped by a 968 nm fiber-coupled diode laser, 1.9 W mode-locked output power at a repetition rate of 64.27 MHz was obtained with 3.5 W absorbed pump power, corresponding to a slope...... efficiency of 76%. Our measurement showed that the pulse duration was 418 fs with the central wavelength of 1048 nm....
Portable Diode Laser Diagnostic System for Collaborative Research on Air-Breathing Combustion
National Research Council Canada - National Science Library
Hanson, Ronald
2003-01-01
This equipment grant focused on four areas: (1) portable diode laser sensors with new fiber-coupled diode lasers and the support equipment to provide higher power with extended wavelength tuning range and speed; (2...
Wang, Song
2017-05-10
Thermal diodes, or devices that transport thermal energy asymmetrically, analogous to electrical diodes, hold promise for thermal energy harvesting and conservation, as well as for phononics or information processing. The junction of a phase change material and phase invariant material can form a thermal diode; however, there are limited constituent materials available for a given target temperature, particularly near ambient. In this work, we demonstrate that a micro and nanoporous polystyrene foam can house a paraffin-based phase change material, fused to PMMA, to produce mechanically robust, solid-state thermal diodes capable of ambient operation with Young\\'s moduli larger than 11.5 MPa and 55.2 MPa above and below the melting transition point, respectively. Moreover, the composites show significant changes in thermal conductivity above and below the melting point of the constituent paraffin and rectification that is well-described by our previous theory and the Maxwell–Eucken model. Maximum thermal rectifications range from 1.18 to 1.34. We show that such devices perform reliably enough to operate in thermal diode bridges, dynamic thermal circuits capable of transforming oscillating temperature inputs into single polarity temperature differences – analogous to an electrical diode bridge with widespread implications for transient thermal energy harvesting and conservation. Overall, our approach yields mechanically robust, solid-state thermal diodes capable of engineering design from a mathematical model of phase change and thermal transport, with implications for energy harvesting.
Large area electron beam diode development
International Nuclear Information System (INIS)
Helava, H.; Gilman, C.M.; Stringfield, R.M.; Young, T.
1983-01-01
A large area annular electron beam diode has been tested at Physics International Co. on the multi-terawatt PITHON generator. A twelve element post hole convolute converted the coaxial MITL into a triaxial arrangement of anode current return structures both inside and outside the cathode structure. The presence of both inner and outer current return paths provide magnetic pressure balance for the beam, as determined by diode current measurements. X-ray pinhole photographs indicated uniform emission with intensity maxima between the post positions. Current losses in the post hole region were negligible, as evidenced by the absence of damage to the aluminum hardware. Radial electron flow near the cathode ring however did damage the inner anode cylinder between the post positions. Cutting away these regions prevented further damage of the transmission lines
Characterization of diode-laser stacks for high-energy-class solid state lasers
Pilar, Jan; Sikocinski, Pawel; Pranowicz, Alina; Divoky, Martin; Crump, P.; Staske, R.; Lucianetti, Antonio; Mocek, Tomas
2014-03-01
In this work, we present a comparative study of high power diode stacks produced by world's leading manufacturers such as DILAS, Jenoptik, and Quantel. The diode-laser stacks are characterized by central wavelength around 939 nm, duty cycle of 1 %, and maximum repetition rate of 10 Hz. The characterization includes peak power, electrical-to-optical efficiency, central wavelength and full width at half maximum (FWHM) as a function of diode current and cooling temperature. A cross-check of measurements performed at HiLASE-IoP and Ferdinand-Braun-Institut (FBH) shows very good agreement between the results. Our study reveals also the presence of discontinuities in the spectra of two diode stacks. We consider the results presented here a valuable tool to optimize pump sources for ultra-high average power lasers, including laser fusion facilities.
Focusing studies of an applied Br extraction diode on the LION accelerator
International Nuclear Information System (INIS)
Struckman, C.K.; Kusse, B.R.; Rondeau, G.
1990-01-01
The LION Accelerator, 1.5 MV, 4 Ω, is being used to study the characteristics of an applied B r extraction diode. The diode utilizes both an inner and outer cathode and has been observed to operate at high ion current efficiencies compared to previous extraction diodes. Typical efficiencies were measured to be ∼80% which compares very favorably with the efficiencies seen in applied B z diodes. In this paper, the authors report the results of a series of experiments examining the role of the inner cathode in electron loss and ion emission. In addition, operation with an argon gas cell is reported. The ion beam appears to be space-charge neutralized by the gas cell foil alone, and current neutralized when the gas cell pressure is above 100 mT
Pin Diode Detector For Radiation Field Monitoring In A Current Mode
International Nuclear Information System (INIS)
Beck, A.; Wengrowicz, U.; Kadmon, Y.; Tirosh, D.; Osovizky, A.; Vulasky, E.; Tal, N.
1999-01-01
Thus paper presents calculations and tests made for a detector based on a bare Pin diode and a Pin diode coupled to a plastic scintillator. These configurations have a variety of applications in radiation field monitoring. For example, the Positron Emission Tomography (PET) technology which becomes an established diagnostic imaging modality. Flour-18 is one of the major isotopes being used by PET imaging. The PET method utilizes short half life β + radioisotopes which, by annihilation, produce a pair of high energy photons (511 keV). Fluoro-deoxyglucose producers are required to meet federal regulations and licensing requirements. Some of the regulations are related to the production in chemistry modules regarding measuring the Start Of Synthesis (SOS) activity and verifying the process repeatability. Locating a radiation detector based on Pin diode inside the chemistry modules is suitable for this purpose. The dimensions of a Pin diode based detector can be small, with expected linearity over several scale decades
Solid Sampling with a Diode Laser for Portable Ambient Mass Spectrometry.
Yung, Yeni P; Wickramasinghe, Raveendra; Vaikkinen, Anu; Kauppila, Tiina J; Veryovkin, Igor V; Hanley, Luke
2017-07-18
A hand-held diode laser is implemented for solid sampling in portable ambient mass spectrometry (MS). Specifically, a pseudocontinuous wave battery-powered surgical laser diode is employed for portable laser diode thermal desorption (LDTD) at 940 nm and compared with nanosecond pulsed laser ablation at 2940 nm. Postionization is achieved in both cases using atmospheric pressure photoionization (APPI). The laser ablation atmospheric pressure photoionization (LAAPPI) and LDTD-APPI mass spectra of sage leaves (Salvia officinalis) using a field-deployable quadrupole ion trap MS display many similar ion peaks, as do the mass spectra of membrane grown biofilms of Pseudomonas aeruginosa. These results indicate that LDTD-APPI method should be useful for in-field sampling of plant and microbial communities, for example, by portable ambient MS. The feasibility of many portable MS applications is facilitated by the availability of relatively low cost, portable, battery-powered diode lasers. LDTD could also be coupled with plasma- or electrospray-based ionization for the analysis of a variety of solid samples.
Characteristics of silicon diodes as patient dosemeters in external radiation therapy
International Nuclear Information System (INIS)
Nilsson, B.; Sorcini, B.
1988-01-01
Silicon diodes connected to an integrating instrument that are used to measure the entrance dose on patients undergoing radiation therapy have been investigated with special emphasis on practical clinical aspects. The variation of the diode response for different photon qualities with different field sizes and different irradiation situations including oblique fields, wedges, blocking filters giving different electron contamination have been measured. The diode response for the different situations met in clinical practice when using various electron energies have also been examined. The results from measurements for patients treated with high energy are presented. The study has shown that if the mean value of all measured entrance doses with the diode on a patient differ more than ±3% from the presented absorbed dose for 60 Co gamma radiation, a correction of the given dose should be made. The corresponding figure for high energy X-rays is ±5%. 23 refs.; 6 figs.; 5 tabs
A new design of pulsed laser diode driver system for multistate quantum key distribution
Abdullah, M. S.; Jamaludin, M. Z.; Witjaksono, G.; Mokhtar, M. H. H.
2011-07-01
In this paper, we describe a new design of laser diode driver system based on MOSFET current mirror and digital signal controller (DSC). The system is designed to emit stream pairs of photons from three semiconductor laser diodes. The DSC is able to switch between the three laser diodes at constant rate. The duty cycle is maintained at 1% in order to reduce its thermal effect and thus prolong the laser diodes' life cycles. The MOSFET current mirror circuits are capable of delivering constant modulation current with peak current up to 58 mA to each laser diode. This laser driver system will allow the generating biphotons automatically with qubit rate around 8-13% for μ less than or equal to 1, thus making it practical for six-states quantum key distribution implementation.
Electronic and interface state density properties of Cu/n-Si MIS-type diode
Energy Technology Data Exchange (ETDEWEB)
Yakuphanoglu, Fahrettin [Physics Department, Firat University, Elazig 23169 (Turkey)]. E-mail: fyhanoglu@firat.edu.tr
2007-05-01
Electronic and interface-state density properties of the Cu/n-Si diode were investigated by current-voltage and capacitance-voltage (C-V) analyses. The electronic parameters such as barrier height, ideality factor and series resistance of the diode were determined by performing different plots. The barrier height, ideality factor and series resistance values of the diode were found to be 0.69 eV, 5.31 and 7.63 k{omega}, respectively. The obtained ideality factor confirms that the Cu/n-Si device has a metal-insulator-semiconductor (MIS) configuration. The conductance mechanism of the Cu/n-Si diode is in agreement with typical of hopping conduction in polycrystalline and amorphous materials. The interface state density of the diode was found to vary from 1.45x10{sup 13} (eV{sup -1} cm{sup 2}) at E {sub C}-0.45 eV to 0.88x10{sup 13} (eV{sup -1} cm{sup 2}) at E {sub C}-0.66 eV.
Schmitt, S W; Brönstrup, G; Shalev, G; Srivastava, S K; Bashouti, M Y; Döhler, G H; Christiansen, S H
2014-07-21
Vertically aligned silicon nanowire (SiNW) diodes are promising candidates for the integration into various opto-electronic device concepts for e.g. sensing or solar energy conversion. Individual SiNW p-n diodes have intensively been studied, but to date an assessment of their device performance once integrated on a silicon substrate has not been made. We show that using a scanning electron microscope (SEM) equipped with a nano-manipulator and an optical fiber feed-through for tunable (wavelength, power using a tunable laser source) sample illumination, the dark and illuminated current-voltage (I-V) curve of individual SiNW diodes on the substrate wafer can be measured. Surprisingly, the I-V-curve of the serially coupled system composed of SiNW/wafers is accurately described by an equivalent circuit model of a single diode and diode parameters like series and shunting resistivity, diode ideality factor and photocurrent can be retrieved from a fit. We show that the photo-carrier collection efficiency (PCE) of the integrated diode illuminated with variable wavelength and intensity light directly gives insight into the quality of the device design at the nanoscale. We find that the PCE decreases for high light intensities and photocurrent densities, due to the fact that considerable amounts of photo-excited carriers generated within the substrate lead to a decrease in shunting resistivity of the SiNW diode and deteriorate its rectification. The PCE decreases systematically for smaller wavelengths of visible light, showing the possibility of monitoring the effectiveness of the SiNW device surface passivation using the shown measurement technique. The integrated device was pre-characterized using secondary ion mass spectrometry (SIMS), TCAD simulations and electron beam induced current (EBIC) measurements to validate the properties of the characterized material at the single SiNW diode level.
High Power Diode Lasers with External Feedback: Overview and Prospects
DEFF Research Database (Denmark)
Chi, Mingjun; Petersen, Paul Michael
2012-01-01
In summary, different external-cavity feedback techniques to improve the spatial beam quality and narrow the linewidth of the output beam from both BALs and TDLs are presented. Broad-area diode laser system with external-cavity feedback around 800 nm can produce several Watts of output power...... with a good beam quality. Tapered diode laser systems with external-cavity feedback around 800 and 1060 nm can deliver more than 2 W output power with diffraction-limited beam quality and can be operated in single-longitudinal mode. These high-brightness, narrow linewidth, and tunable external-cavity diode...... lasers emerge as the next generation of compact lasers that have the potential of replacing conventional high power laser systems in many existing applications....
Response of the diode scanditronix EFD-3D high-dose per pulse
International Nuclear Information System (INIS)
Sendon del Rio, J. R.; Polo Cezon, R.; Ayala Lazaro, R.; Garcia Hernandez, M. J.; San Miguel Avedillo, F.; Gomez Cores, S.; Jimenez Rojas, R.; Lopez Bote, M. A.
2015-01-01
We check that the sensitivity of a diode type p-ES-3G size decreases with increasing pulse electron beam in the range between 0.6 and 6 0.0 cGy / pulse. This effect stems from the detector, since we have isolated the saturation effects associated with electrometer, and its magnitude varies between similar but different nominal diodes sensitivities. We recommend evaluate the response of diode-electrometer set in the size range of working pulse, before use in an accelerator relative dosimetry. (Author)
Kumar, Ashutosh; Heilmann, M.; Latzel, Michael; Kapoor, Raman; Sharma, Intu; Göbelt, M.; Christiansen, Silke H.; Kumar, Vikram; Singh, Rajendra
2016-01-01
The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained. PMID:27282258
11.72 sq cm SiC Wafer-scale Interconnected 64 kA PiN Diode
2012-01-30
drop of 10.3 V. The dissipated energy was 382 J and the calculated action exceeded 1.7 MA2 -s. Preliminary development of high voltage interconnection...scale diode action (surge current integral), a key reliability parameter, exceeded 1.7 MA2 -s. Figure 6: The wafer-scale interconnected diode...scale diode was 382 J and the calculated action exceeded 1.7 MA2 -sec. High voltage operation of PiN diodes, thyristors, and other semiconductor