WorldWideScience

Sample records for superior sic characteristics

  1. Air Superiority Fighter Characteristics.

    Science.gov (United States)

    1998-06-05

    many a dispute could have been deflated into a single paragraph if the disputants had just dared to define their terms.7 Aristotle ...meaningful. This section will expand on some key ideology concepts. The phrase "air superiority fighter" may bring to mind visions of fighter... biographies are useful in garnering airpower advocate theories as well as identifying key characteristics. Air campaign results, starting with World

  2. DC characteristics of the SiC Schottky diodes

    National Research Council Canada - National Science Library

    W Janke; A Hapka; M Oleksy

    2011-01-01

      DC characteristics of the SiC Schottky diodes The isothermal and non-isothermal characteristics of silicon carbide Schottky diodes in the wide range of currents and ambient temperatures are investigated in this paper...

  3. Detail study of SiC MOSFET switching characteristics

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig

    2014-01-01

    This paper makes detail study of the latest SiC MOSFETs switching characteristics in relation to gate driver maximum current, gate resistance, common source inductance and parasitic switching loop inductance. The switching performance of SiC MOSFETs in terms of turn on and turn off voltage...... and current are presented. Switching losses analysis is made according to the experiment results. The switching characteristics study and switching losses analysis could give some guidelines of gate driver IC and gate resistance selection, switching losses estimation and circuit design of SiC MOSFETs....

  4. Anomalous forward I-V characteristics of Ti/Au SiC Schottky barrier diodes

    Energy Technology Data Exchange (ETDEWEB)

    Morrison, D.J.; Wright, N.G.; Johnson, C.M.; O' Neill, A.G. [Newcastle upon Tyne Univ. (UK). Dept. of Electr. and Electron. Eng.; Hilton, K.P.; Uren, M.J. [Defence Evaluation Research Agency, Malvern, Worcestershire (United Kingdom)

    1999-07-30

    The aim of this study was to improve the adhesion of Au Schottky contacts to SiC. In order to do this, before the deposition of the Au layer, a thin layer of Ti was deposited. However, this resulted in an anomalous step in the forward bias electrical characteristic for some diodes. An equivalent circuit model is introduced to explain this irregularity in terms of two barrier heights. PSPICE is used to simulate this model. Simulated and experimental data are in good agreement over the temperature range 25 to 250 C. (orig.)

  5. Synthesis and characteristics of SiC whiskers with "rosary bead" morphology

    Institute of Scientific and Technical Information of China (English)

    Xian Jia; Xiaomei Ling

    2004-01-01

    SiC whiskers with ″rosary bead″ morphology were synthesized using suitable silicon source and carbon source through solid reaction at the temperature above 1537 K. The diameter and length of the SiC whiskers were about 0.1-1.0 μm and 20-100 μm,respectively. The largest diameter of their enlarged ends of the whiskers was about 0.2-1.0 μm, and it gradually and smoothly decreased to the size of the plain part of the whiskers. The results of X-ray diffraction analysis show that the crystalline structure of the obtained SiC whiskers is β-SiC. It is considered that the SiC whiskers grow via a vapor-solid mechanism.

  6. Characteristics of SiC neutron sensor spectrum unfolding process based on Bayesian inference

    Energy Technology Data Exchange (ETDEWEB)

    Cetnar, Jerzy; Krolikowski, Igor [Faculty of Energy and Fuels AGH - University of Science and Technology, Al. Mickiewicza 30, 30-059 Krakow (Poland); Ottaviani, L. [IM2NP, UMR CNRS 7334, Aix-Marseille University, Case 231 -13397 Marseille Cedex 20 (France); Lyoussi, A. [CEA, DEN, DER, Instrumentation Sensors and Dosimetry Laboratory, Cadarache, F-13108 St-Paul-Lez-Durance (France)

    2015-07-01

    This paper deals with SiC detector signal interpretation in neutron radiation measurements in mixed neutron gamma radiation fields, which is called the detector inverse problem or the spectrum unfolding, and it aims in finding a representation of the primary radiation, based on the measured detector signals. In our novel methodology we resort to Bayesian inference approach. In the developed procedure the resultant spectra is unfolded form detector channels reading, where the estimated neutron fluence in a group structure is obtained with its statistical characteristic comprising of standard deviation and correlation matrix. In the paper we present results of unfolding process for case of D-T neutron source in neutron moderating environment. Discussions of statistical properties of obtained results are presented as well as of the physical meaning of obtained correlation matrix of estimated group fluence. The presented works has been carried out within the I-SMART project, which is part of the KIC InnoEnergy R and D program. (authors)

  7. Surface characteristics and corrosion behaviour of WE43 magnesium alloy coated by SiC film

    Science.gov (United States)

    Li, M.; Cheng, Y.; Zheng, Y. F.; Zhang, X.; Xi, T. F.; Wei, S. C.

    2012-01-01

    Amorphous SiC film has been successfully fabricated on the surface of WE43 magnesium alloy by plasma enhanced chemical vapour deposition (PECVD) technique. The microstructure and elemental composition were analyzed by transmission electron microscopy (TEM), glancing angle X-ray diffraction (GAXRD) and X-ray photoelectron spectroscopy (XPS), respectively. The immersion test indicated that SiC film could efficiently slow down the degradation rate of WE43 alloy in simulated body fluid (SBF) at 37 ± 1 °C. The indirect toxicity experiment was conducted using L929 cell line and the results showed that the extraction medium of SiC coated WE43 alloys exhibited no inhibitory effect on L929 cell growth. The in vitro hemocompatibility of the samples was investigated by hemolysis test and blood platelets adhesion test, and it was found that the hemolysis rate of the coated WE43 alloy decreased greatly, and the platelets attached on the SiC film were slightly activated with a round shape. It could be concluded that SiC film prepared by PECVD made WE43 alloy more appropriate to biomedical application.

  8. Surface characteristics and corrosion behaviour of WE43 magnesium alloy coated by SiC film

    Energy Technology Data Exchange (ETDEWEB)

    Li, M. [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Cheng, Y., E-mail: chengyan@pku.edu.cn [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Zheng, Y.F. [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Department of Advanced Materials and Nanotechnology, College of Engineering, Peking University, Beijing 100871 (China); Zhang, X.; Xi, T.F. [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Wei, S.C. [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Department of Oral and Maxillofacial Surgery, School and Hospital of Stomatology, Peking University, Beijing 100871 (China)

    2012-01-15

    Amorphous SiC film has been successfully fabricated on the surface of WE43 magnesium alloy by plasma enhanced chemical vapour deposition (PECVD) technique. The microstructure and elemental composition were analyzed by transmission electron microscopy (TEM), glancing angle X-ray diffraction (GAXRD) and X-ray photoelectron spectroscopy (XPS), respectively. The immersion test indicated that SiC film could efficiently slow down the degradation rate of WE43 alloy in simulated body fluid (SBF) at 37 {+-} 1 Degree-Sign C. The indirect toxicity experiment was conducted using L929 cell line and the results showed that the extraction medium of SiC coated WE43 alloys exhibited no inhibitory effect on L929 cell growth. The in vitro hemocompatibility of the samples was investigated by hemolysis test and blood platelets adhesion test, and it was found that the hemolysis rate of the coated WE43 alloy decreased greatly, and the platelets attached on the SiC film were slightly activated with a round shape. It could be concluded that SiC film prepared by PECVD made WE43 alloy more appropriate to biomedical application.

  9. Dissimilar joint characteristics of SiC and WC-Co alloy by laser brazing

    Science.gov (United States)

    Nagatsuka, K.; Sechi, Y.; Nakata, K.

    2012-08-01

    SiC and WC-Co alloys were joined by laser brazing with an active braze metal. The braze metal based on eutectic Ag-Cu alloy with additional Ti as an active element ranging from 0 to 2.8 mass% was sandwiched by the SiC block and WC-Co alloy plate. The brazing was carried out by selective laser beam irradiation on the WC-Co alloy plate. The content of Ti in the braze metal was required to exceed 0.6 mass% in order to form a brazed joint with a measurable shear strength. The shear strength increased with increasing Ti content up to 2.3 mass%Ti and decreased with a higher content.

  10. High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate

    Science.gov (United States)

    Ze-Zhao, He; Ke-Wu, Yang; Cui, Yu; Qing-Bin, Liu; Jing-Jing, Wang; Jia, Li; Wei-Li, Lu; Zhi-Hong, Feng; Shu-Jun, Cai

    2016-06-01

    In this paper, high temperature direct current (DC) performance of bilayer epitaxial graphene device on SiC substrate is studied in a temperature range from 25 °C to 200 °C. At a gate voltage of -8 V (far from Dirac point), the drain-source current decreases obviously with increasing temperature, but it has little change at a gate bias of +8 V (near Dirac point). The competing interactions between scattering and thermal activation are responsible for the different reduction tendencies. Four different kinds of scatterings are taken into account to qualitatively analyze the carrier mobility under different temperatures. The devices exhibit almost unchanged DC performances after high temperature measurements at 200 °C for 5 hours in air ambience, demonstrating the high thermal stabilities of the bilayer epitaxial graphene devices. Project supported by the National Natural Science Foundation of China (Grant No. 61306006).

  11. AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers

    Indian Academy of Sciences (India)

    T R Lenka; A K Panda

    2012-07-01

    In this paper, a new gate-recessed AlGaN/GaN-based high electron mobility transistor (HEMT) on SiC substrate is proposed and its DC as well as microwave characteristics are discussed for Si3N4 and SiO2 passivation layers using technology computer aided design (TCAD). THe two-dimensional electron gas (2DEG) transport properties are discussed by solving Schödinger and Poison equations self-consistently resulting in various subbands having electron eigenvalues. From DC characteristics, the saturation drain currents are measured to be 600 mA/mm and 550 mA/mm for Si3N4 and SiO2 passivation layers respectively. Apart from DC, small-signal AC analysis has been done using two-port network for various microwwave parameters. The extrinsic transconductance parameters are measured to be 131.7 mS/mm at a gate voltage of $V_{gs} = -0.35$ V and 114.6 mS/mm at a gate voltage of $V_{gs} = -0.4$ V for Si3N4 and SiO2 passivation layers respectively. The current gain cut-off frequencies $(f_{t})$ are measured t be 27.1 GHz and 23.97 GHz in unit-gain-point method at a gate voltage of -0.4 V for Si3N4 and SiO2 passivation layers respectively. Similarly, the power gain cut-off frequencied $(f_{max})$ are measured to be 41 GHz and 38.5 GHz in unit-gain-point method at a gate voltage of -0.1 V for Si3N4 and SiO2 passivation layers respectively. Furthermore, the maximum frequency of oscillation or unit power gain (MUG = 1) cut-off frequencies for Si3N4 and SiO2 passivation layers are measured to be 32 GHz and 28 GHz respectively from MUG curves and the unit current gain, $|h_{21}| = 1$ cut-off frequencies are measured to be 140 GHz and 75 GHz for Si3N4 and SiO2 passivation layers respectively from the $abs |h_{21}|$ curves. HEMT with Si3N4 passivation layer giver better results than HEMT with SiO2 passivation layer.

  12. A Comparative Study of Thermal Conductivity and Tribological Behavior of Squeeze Cast A359/AlN and A359/SiC Composites

    Science.gov (United States)

    Shalaby, Essam. A. M.; Churyumov, Alexander. Yu.; Besisa, Dina. H. A.; Daoud, A.; Abou El-khair, M. T.

    2017-07-01

    A comparative study of thermal and wear behavior of squeeze cast A359 alloy and composites containing 5, 10 and 15 wt.% AlN and SiC particulates was investigated. It was pointed out that A359/AlN composites have a superior thermal conductivity as compared to A359 alloy or even to A359/SiC composites. Composites wear characteristics were achieved by pins-on-disk instrument over a load range of 20-60 N and a sliding speed of 2.75 m/s. Results showed that A359/AlN and A359/SiC composites exhibited higher wear resistance values compared to A359 alloy. Moreover, A359/AlN composites showed superior values of wear resistance than A359/SiC composites at relatively high loads. Friction coefficients and contact surface temperature for A359/AlN specimens decreased as AlN content increased, while they increased for A359/SiC. Investigations of worn surfaces revealed that A359/AlN composites were covered up by aluminum nitrides and iron oxides, which acted as smooth layers. However, A359/SiC composites were mainly covered only by iron oxides. The superior thermal conductivity and the significant wear resistance of the developed A359/AlN composites provided a high durable material suitable for industrial applications.

  13. Analysis of clinical characteristics of 96 patients with acute superior mesenteric venous thrombosis

    Directory of Open Access Journals (Sweden)

    Wen-hui LIU

    2015-06-01

    Full Text Available Objective To investigate the clinical characteristics of patients suffering from acute superior mesenteric venous thrombosis (ASMVT. Methods Clinical data of 96 ASMVT patients admitted to the PLA General Hospital from January 2000 to December 2013 were retrospectively analyzed. Clinical characteristics and death-associated risk factors were studied, and the influence of treatment strategy and thrombosis location on patients' outcome were analyzed. Results The patients were divided into survival group (n=83 and death group (n=13 according to the outcome. The mean age was 46.9 years old, and the ratio of male/female was 3:1. Thirty-nine patients presented isolated superior mesenteric venous thrombosis (SMVT and fiftyseven patients presented combined SMVT. In the death group, higher incidence of severe acute pancreatitis and isolated SMVT were found than the survival group (P<0.01, P=0.004. The patients were again divided into laparotomy group, interventional thrombolysis group, and conservative treatment group according to treatment modality. The interval between symptom onset and treatment was shorter, the incidence of isolated SMVT and mortality rate were higher in the laparotomy group compared with those in interventional thrombolysis group and conservative treatment group. There was no death in the conservative treatment group. In comparison with the combined SMVT group, more patients in the isolated SMVT group presented peritoneal signs and less with history of splenectomy (P<0.001, P=0.002. The proportion of patients with laparotomy and bowel necrosis in the isolated SMVT group was higher than those in the combined SMVT group (P=0.023, P=0.012. Conclusions Patients with isolated SMVT are more likely to have peritoneal signs and bowel necrosis, surgical treatment is mandatory. Patients with combined SMVT often have a history of splenectomy. ASMVT patients with severe pancreatitis may present higher mortality rate. DOI: 10.11855/j

  14. A Study on Fretting Wear Property of CVD SiC and Sintered SiC

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Hyun-Jin; Jang, Ki-Nam; An, Ji-Hyeong; Kim, Kyu-Tae [Dongguk University, Gyeongju (Korea, Republic of)

    2015-10-15

    Silicon Carbide is broadly used as high temperature structure material because of its high temperature tolerance and superior mechanical properties. After the Fukushima nuclear power plant accident, SiC proposed as one of the alternative materials for LWR fuel cladding to provide enhanced safety margin. Grid-to-rod fretting wear-induced fuel failure is known to occur due to flow-induced vibration of the reactor core and grid to- rod gap. In this paper, wear tests for CVD SiC plate and sintered SiC tube were performed with two types of spacer grids. Wear test of corroded and non-corroded CVD SiC plates indicate that wear resistance of corroded specimen is lower than one of non-corroded specimen in contrast with zirconium alloy cladding tube. It may be affected by rough surface of corroded specimen caused by grain boundary attack.

  15. A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps

    Energy Technology Data Exchange (ETDEWEB)

    Aroutiounian, V.M. [Yerevan State University, Al. Manoukian Str. 1, 375025 Yerevan (Armenia)]. E-mail: kisahar@ysu.am; Avetisyan, G.A. [Yerevan State University, Al. Manoukian Str. 1, 375025 Yerevan (Armenia); Buniatyan, V.V. [State Engineering University of Armenia, 105 Teryan Str., 375009 Yerevan (Armenia); Soukiassian, P.G. [Commissariat a l' Energie Atomique, Laboratoire Surfaces et Interfaces de Materiaux, Avances associe a l' Universite de Paris-Sud/Orsay, DSM-DRECAM-SPCSI, Batiment 462, Saclay, 91191 Gif sur Yvette Cedex (France); Buniatyan, Vaz.V. [State Engineering University of Armenia, 105 Teryan Str., 375009 Yerevan (Armenia)

    2006-05-30

    Noise characteristics of silicon carbide Schottky barrier field effect transistors (MESFET) are examined for the case of the operation in small-signal regime and the presence of deep impurity levels and electron traps in the band gap of the channel. A new model of calculations of noise is suggested. It is shown that the noise measure of the short channel MESFET can be decreased within certain high frequency range.

  16. Effect of SiC particle size on the microstructure and properties of cold-sprayed Al/SiCp composite coating

    Science.gov (United States)

    Yu, Min; Hua, Junwei

    2017-07-01

    The Al5056/SiC composite coatings were prepared by cold spraying. Experimental results show that the SiC content in the composite coating deposited with the SiC powder having an average size of 67 μm (Al5056/SiC-67) is similar to that deposited with the SiC powder having an average size of 27 μm (Al5056/SiC-27). The microhardness and cohesion strength of Al5056/SiC-67 coating are higher than those of the Al5056/SiC-27 coating. In addition, the Al5056/SiC-67 coating having a superior wear resistance because of the coarse SiC powder with a superior kinetic energy contributes to the deformation resistance of the matrix Al5056 particles.

  17. Mechanical Characteristics and Crack-Healing of ZIRCONIA(ZrO{sub 2}) Composite Ceramics with SiC and TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Nam, Ki Woo [Pukyong National Univ., Busan (Korea, Republic of)

    2016-03-15

    This study evaluated the mechanical properties and crack-healing abilities of zirconia composite ceramics. The six kinds of specimens used were: partially stabilized zirconia (Z) and five zirconia composite (ZS, ZST1, ZST2, ZST3, and ZST5) with SiC and TiO{sub 2}. There was not a large difference between the Vickers hardness of the six types of zirconia ceramics. The bending strength of the ZS specimen degraded rapidly, but the zirconia specimens with TiO{sub 2}(ZST1, ZST2, ZST3, and ZST5) showed improved strength. Therefore, it was determined that the bending strength is affected by the crystallization, which is due to the addition of SiC and TiO{sub 2}. From the crack-healing conditions having the highest bending strength, monolithic zirconia retained its cracks, while the specimens of four types with SiC healed their cracks.

  18. Wetting and reaction characteristics of crystalline and amorphous SiO2 derived rice-husk ash and SiO2/SiC substrates with Al-Si-Mg alloys

    Science.gov (United States)

    Bahrami, A.; Pech-Canul, M. I.; Gutiérrez, C. A.; Soltani, N.

    2015-12-01

    A study of the wetting behavior of three substrate types (SiC, SiO2-derived RHA and SiC/SiO2-derived RHA) by two Al-Si-Mg alloys using the sessile drop method has been conducted, using amorphous and crystalline SiO2 in the experiment. Mostly, there is a transition from non-wetting to wetting contact angles, being the lowest θ values achieved with the alloy of high Mg content in contact with amorphous SiO2. The observed wetting behavior is attributed to the deposited Mg on the substrates. A strong diffusion of Si from the SiC/Amorphous RHA substrate into the metal drop explains the free Si segregated at the drop/substrate interface and drop surface. Although incorporation of both SiO2-derived RHA structures into the SiC powder compact substrates increases the contact angles in comparison with the SiC substrate alone, the still observed acute contact angles in RHA/SiC substrates make them promising for fabrication of composites with high volume fraction of reinforcement by the pressureless infiltration technique. The observed wetting characteristics, with decrease in surface tension and contact angles is explained by surface related phenomena. Based on contact angle changes, drop dimensions and surface tension values, as well as on the interfacial elemental mapping, and XRD analysis of substrates, some wetting and reaction pathways are proposed and discussed.

  19. The characteristics of action potential and nonselective cation current of cardiomyocytes in rabbit superior vena cava

    Institute of Scientific and Technical Information of China (English)

    WANG Pan; YANG XinChun; LIU XiuLan; BAO RongFeng; LIU TaiFeng

    2008-01-01

    As s special focus in initiating and maintaining atrial fibrillation (AF), cardiomyocytes in superior vena cavs (SVC) have distinctive electrophysiological characters. In this study, we found that comparing with the right atrial (RA) cardiomyoctyes, the SVC cardiomyoctyes had longer APD90 at the different basic cycle lengths; the conduction block could be observed on both RA and SVC cardiomyoctyes. A few of SVC cardiomyoctyes showed slow response action potentials with automatic activity and some others showed early afterdepolarization (EAD) spontaneously. Further more, we found that there are nonselective cation current (INs) in both SVC and RA cardiomyocytes. The peak density of INs in SVC cardiomyocytes was smaller than that in RA cardiomyocytes. Removal of extracellular divalent cation and glucose could increase INs in SVC cardiomyocytes. The agonist or the antagonist of INs may increase or decrease APD. To sum up, some SVC cardiomyocytes possess the ability of spontaneous activity; the difference of transmembrane action potentials between SVC and RA cardiomyocytes is partly because of the different density of INs between them; the agonist or the antagonist of INs can increase or decrease APD leading to the enhancement or reduction of EAD genesis in SVC cardiomyocytes. INs in rabbit myocytes is fairly similar to TRPC3 current in electrophysiological property, which might play an important role in the mechanisms of AF.

  20. Receiver-Operating-Characteristic Analysis Reveals Superiority of Scale-Dependent Wavelet and Spectral Measures for Assessing Cardiac Dysfunction

    CERN Document Server

    Thurner, S; Lowen, S B; Teich, M C; Thurner, Stefan; Feurstein, Markus C.; Lowen, Steven B.; Teich, Malvin C.

    1998-01-01

    Receiver-operating-characteristic (ROC) analysis was used to assess the suitability of various heart rate variability (HRV) measures for correctly classifying electrocardiogram records of varying lengths as normal or revealing the presence of heart failure. Scale-dependent HRV measures were found to be substantially superior to scale-independent measures (scaling exponents) for discriminating the two classes of data over a broad range of record lengths. The wavelet-coefficient standard deviation at a scale near 32 heartbeat intervals, and its spectral counterpart near 1/32 cycles per interval, provide reliable results using record lengths just minutes long. A jittered integrate-and-fire model built around a fractal Gaussian-noise kernel provides a realistic, though not perfect, simulation of heartbeat sequences.

  1. Mechanical characteristics of microwave sintered silicon carbide

    Indian Academy of Sciences (India)

    S Mandal; A Seal; S K Dalui; A K Dey; S Ghatak; A K Mukhopadhyay

    2001-04-01

    The present work deals with the sintering of SiC with a low melting additive by microwave technique. The mechanical characteristics of the products were compared with that of conventionally sintered products. The failure stress of the microwave sintered products, in biaxial flexure, was superior to that of the products made by conventional sintering route in ambient condition. In firing of products by conventionally sintered process, SiC grain gets oxidized producing SiO2 (∼ 32 wt%) and deteriorates the quality of the product substantially. Partially sintered silicon carbide by such a method is a useful material for a varieties of applications ranging from kiln furniture to membrane material.

  2. Rapid Isolation of the Trichoderma Strain with Higher Degrading Ability of a Filter Paper and Superior Proliferation Characteristics Using Avicel Plates and the Double-Layer Selection Medium

    Science.gov (United States)

    Toyama, Hideo; Nakano, Megumi; Satake, Yuuki; Toyama, Nobuo

    The cost of cellulase is still a problem for bioethanol production. As the cellulase of Trichoderma reesei is applicable for producing ethanol from cellulosic materials, the cellulase productivity of this fungus should be increased. Therefore, we attempted to develop a system to isolate the strain with higher degrading ability of a filter paper and superior proliferation characteristics among the conidia treated with the mitotic arrester, colchicine. When green mature conidia of T. reesei RUT C-30 were swollen, autopolyploidized, and incubated in the double-layer selection medium containing Avicel, colonies appeared on the surface earlier than the original strain. When such colonies and the original colony were incubated on the Avicel plates, strain B5, one of the colonies derived from the colchicinetreated conidia, showed superior proliferation characteristics. Moreover, when strain B5 and the original strain were compared in the filter paper degrading ability and the cellulose hydrolyzing activity, strain B5 was also superior to the original strain. It was suspected that superior proliferation characteristics of strain B5 reflects higher filter paper degrading ability. Thus, we concluded that the Trichoderma strain with higher degrading ability of a filter paper and superior proliferation characteristics can be isolated using Avicel plates and the double-layer selection medium.

  3. Rapid isolation of the Trichoderma strain with higher degrading ability of a filter paper and superior proliferation characteristics using avicel plates and the double-layer selection medium.

    Science.gov (United States)

    Toyama, Hideo; Nakano, Megumi; Satake, Yuuki; Toyama, Nobuo

    2008-03-01

    The cost of cellulase is still a problem for bioethanol production. As the cellulase of Trichoderma reesei is applicable for producing ethanol from cellulosic materials, the cellulase productivity of this fungus should be increased. Therefore, we attempted to develop a system to isolate the strain with higher degrading ability of a filter paper and superior proliferation characteristics among the conidia treated with the mitotic arrester, colchicine. When green mature conidia of T. reesei RUT C-30 were swollen, autopolyploidized, and incubated in the double-layer selection medium containing Avicel, colonies appeared on the surface earlier than the original strain. When such colonies and the original colony were incubated on the Avicel plates, strain B5, one of the colonies derived from the colchicine-treated conidia, showed superior proliferation characteristics. Moreover, when strain B5 and the original strain were compared in the filter paper degrading ability and the cellulose hydrolyzing activity, strain B5 was also superior to the original strain. It was suspected that superior proliferation characteristics of strain B5 reflects higher filter paper degrading ability. Thus, we concluded that the Trichoderma strain with higher degrading ability of a filter paper and superior proliferation characteristics can be isolated using Avicel plates and the double-layer selection medium.

  4. EFFECTS OF INDIVIDUAL CHARACTERISTICS AND ORGANIZATIONAL CONTEXT ON SUPERIORS' USE OF CONFLICT STYLES AND SUBORDINATES' SATISFACTION WITH SUPERVISION

    Directory of Open Access Journals (Sweden)

    Lee Kim Lian

    2008-01-01

    Full Text Available Data from 139 respondents from major industries showed that subordinates were more satisfied with their superiors' supervision through the exercise of integrating, compromising and obliging styles. On the contrary, subordinates who perceived their superiors as primarily using dominating and avoiding styles viewed them as incompetent in supervision and thus lowering their level of satisfaction with supervision. Among the conflict handling styles, integrating was most correlated with organic structure. The organic structure was found to be positively correlated with subordinates' satisfaction. These results implied that organic structure can be a potent force in maintaining organizational stability. The exercise of dominating style was found to be only marginally correlated with superior's age. Superior rank in lower hierarchy level was found to have a negative impact, albeit marginally on the exercise of dominating style. The present results also seemed to suggest that subordinates tend to be less satisfied with superiors with wider span of control.

  5. SICs and Algebraic Number Theory

    Science.gov (United States)

    Appleby, Marcus; Flammia, Steven; McConnell, Gary; Yard, Jon

    2017-08-01

    We give an overview of some remarkable connections between symmetric informationally complete measurements (SIC-POVMs, or SICs) and algebraic number theory, in particular, a connection with Hilbert's 12th problem. The paper is meant to be intelligible to a physicist who has no prior knowledge of either Galois theory or algebraic number theory.

  6. Advanced SiC composites for fusion applications

    Energy Technology Data Exchange (ETDEWEB)

    Snead, L.L.; Schwarz, O.J. [Oak Ridge National Lab., TN (United States)

    1995-04-01

    This is a short review of the motivation for and progress in the development of ceramic matrix composites for fusion. Chemically vapor infiltrated silicon carbide (SiC) composites have been fabricated from continuous fibers of either SiC or graphite and tested for strength and thermal conductivity. Of significance is the the Hi-Nicalon{trademark} SiC based fiber composite has superior unirradiated properties as compared to the standard Nicalon grade. Based on previous results on the stability of the Hi-Nicalon fiber, this system should prove more resistant to neutron irradiation. A graphite fiber composite has been fabricated with very good mechnical properties and thermal conductivity an order of magnitude higher than typical SiC/SiC composites.

  7. Influence of series resistance and cooling conditions on I-V characteristics of SiC merged PiN Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hapka, Aneta, E-mail: hapka@ie.tu.koszalin.pl [Department of Electronics and Computer Science, Koszalin University of Technology, J. J. Sniadeckich 2, Koszalin, Postal Code: 75-453 (Poland); Janke, Wlodzimierz; Krasniewski, Jaroslaw [Department of Electronics and Computer Science, Koszalin University of Technology, J. J. Sniadeckich 2, Koszalin, Postal Code: 75-453 (Poland)

    2012-09-01

    The paper presents the exemplary electro-thermal models of merged PiN Schottky diode - a diode with the parallel PiN junction, protecting the device against the uncontrolled voltage rise, causing so-called thermal runaway. In the presented models, the conductivity modulation effect in the PiN junction is taken into account. The influence of the PiN junction on the non-isothermal I-V characteristics of MPS diodes, for various cooling conditions, is discussed. It is shown, that the thermal runaway is possible, in spite of presence of protecting PiN junction.

  8. Solution processed, hybrid 2D/3D MoS2/Si heterostructures with superior junction characteristics.

    Science.gov (United States)

    Mukherjee, Subhrajit; Biswas, Souvik; Das, Soumen; Ray, Samit K

    2017-02-03

    We report a theoretical and experimental investigation of the hybrid heterostructure interfaces between atomically thin MoS2 nanocrystals (NCs) on Si platform for their potential applications towards next generation electrical and optical devices. Mie theory based numerical analysis and COMSOL simulations based on finite element method (FEM) have been utilized to study the optical absorption characteristics and light matter interactions in variable sized MoS2 NCs. The size dependent absorption characteristics and the enhancement of electric field of the heterojunction in the UV-visible spectral range agree well with the experimental results. A lithography-free, wafer scale, 2D materials on a 3D substrate hybrid vertical heterostructure has been fabricated using colloidal n-MoS2 NCs on p-Si. The fabricated p-n heterojunction exhibited excellent junction characteristics with a high rectification ratio suitable for voltage clipper and rectifier applications. The current-voltage characteristics of the devices under illumination have been performed in the temperature range of 10-300 K. The device exhibits a high photo-to-dark current ratio of ~3 x 103 and a responsivity comparable to a commercial Si photodetector. The excellent heterojunction characteristics demonstrate the great potential of MoS2 NCs based hybrid electronic and optoelectronic devices in near future.

  9. Al2O3绝缘栅SiC MIS结构基本特性的研究%Fundamental characteristics of SiC MIS structure with Al2O3 as gate dielectric

    Institute of Scientific and Technical Information of China (English)

    刘莉; 杨银堂; 马晓华

    2011-01-01

    采用原子层淀积(ALD)方法在4H-SiC(0001)8°N-/N+外延层上制备了超薄(~4 nm)Al2O3绝缘栅高介电常数SiC MIS电容.通过对Al2O3介质膜以及Al2O3/SiC界面微结构和电学特性分析表明,实验所得Al2O3介质膜具有较好的体特性和界面特性,Al2O3薄膜的击穿电场为25MV/cm,并且在可以接受的界面态密度(2×1013 cm-2)下具有较小的栅泄漏电流(8 MV/cm电场下漏电流密度为l×10-3A/cm-2).电流-电压测试分析表明,在FN隧穿条件下,SiC/A12O3之间的势垒高度为1.4 eV,已达到制作SiC MISFET器件的要求.同时,在整个栅压区域也受Frenkel-Poole和Schottkv机制的共同影响.%SiC MIS structure with ultra-thin Al2O3 as gate dielectric deposited by atomic layer deposition (ALD) on epitaxial layer of 4H-SiC(0001)8°N-/N+ substrate is fabricated.The microstructure and electrical characteristics analysis on the film and Al2O3/SiC interface has shown that Al2O3 deposited has a good bulk characteristics and a good quality between Al2O3 and SiC.The breakdown electrical field of Al2O3 film is 25 MV/cm; the MIS capacitor has a fairly low gate leakage current (current density of 1×10-3A/cm-2 with a electric field of 8 MV/cm) under acceptable interface effective charge (2× 1013 cm-2).Current-voltage measurement and analysis has shown that when the gate leakage current mechanism is dominated by FN tunneling, the barrier height of SiC/Al2O3 is 1.4 eV,which can meet the requirement of SiC MISFET devices.Besides this, the gate leakage current is co-influenced by both of Frenkel-Poole mechanism and Schottky emission.

  10. The characteristics of action potential and nonselec-tive cation current of cardiomyocytes in rabbit superior vena cava

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    As a special focus in initiating and maintaining atrial fibrillation (AF), cardiomyocytes in superior vena cava (SVC) have distinctive electrophysiological characters. In this study, we found that comparing with the right atrial (RA) cardiomyoctyes, the SVC cardiomyoctyes had longer APD90 at the different basic cycle lengths; the conduction block could be observed on both RA and SVC cardiomyoctyes. A few of SVC cardiomyoctyes showed slow response action potentials with automatic activity and some others showed early afterdepolarization (EAD) spontaneously. Further more, we found that there are nonselective cation current (INs) in both SVC and RA cardiomyocytes. The peak density of INs in SVC cardiomyocytes was smaller than that in RA cardiomyocytes. Removal of extracellular divalent cation and glucose could increase INs in SVC cardiomyocytes. The agonist or the antagonist of INs may in-crease or decrease APD. To sum up, some SVC cardiomyocytes possess the ability of spontaneous activity; the difference of transmembrane action potentials between SVC and RA cardiomyocytes is partly because of the different density of INs between them; the agonist or the antagonist of INs can in-crease or decrease APD leading to the enhancement or reduction of EAD genesis in SVC cardiomyo-cytes. INs in rabbit myocytes is fairly similar to TRPC3 current in electrophysiological property, which might play an important role in the mechanisms of AF.

  11. Highly Reversible and Superior Li-Storage Characteristics of Layered GeS2 and Its Amorphous Composites.

    Science.gov (United States)

    Sung, Geon-Kyu; Jeon, Ki-Joon; Park, Cheol-Min

    2016-11-02

    A layered GeS2 material was assessed as an electrode material in the fabrication of superior rechargeable Li-ion batteries. The electrochemical Li insertion/extraction behavior of the GeS2 electrode was investigated from extended X-ray absorption measurements as well as by cyclic voltammetry and differential capacity plots to better understand its Li insertion/extraction behavior. Using the Li insertion/extraction reaction mechanism of the GeS2 electrode, an interesting amorphous GeS2-based composite was developed and tested for use as a high-performance electrode. Interestingly, the amorphous GeS2-based composite electrode exhibited highly reversible discharging and charging reactions, which were attributed to a conversion/recombination reaction. The amorphous GeS2-based composite electrode exhibited highly reversible and outstanding electrochemical performances, a highly reversible capacity (first charge capacity: 1298 mAh g(-1)) with a high first Coulombic efficiency (83.3%), rapid rate capability (ca. 800 mAh g(-1) at a high current rate of 700 mA g(-1)), and long capacity retention over 180 cycles with high capacity (1100 mAh g(-1)) thanks to its interesting electrochemical reaction mechanism. Overall, this layered GeS2 and its amorphous GeS2/C composite are novel alternative anode materials for the potential mass production of rechargeable Li-ion batteries with excellent performance.

  12. Fat saturation in dynamic breast MRI at 3 Tesla: is the Dixon technique superior to spectral fat saturation? A visual grading characteristics study

    Energy Technology Data Exchange (ETDEWEB)

    Clauser, P. [University of Udine, Azienda Ospedaliero-Universitaria ' ' S.Maria della Misericordia' ' , Institute of Diagnostic Radiology, Udine (Italy); Medical University of Vienna, Department of Biomedical Imaging and Image-guided interventions, Division of Molecular and Gender Imaging, Vienna (Austria); Pinker, K.; Helbich, T.H.; Kapetas, P.; Bernathova, M.; Baltzer, P.A.T. [Medical University of Vienna, Department of Biomedical Imaging and Image-guided interventions, Division of Molecular and Gender Imaging, Vienna (Austria)

    2014-09-15

    To intra-individually compare the diagnostic image quality of Dixon and spectral fat suppression at 3 T. Fifty consecutive patients (mean age 55.1 years) undergoing 3 T breast MRI were recruited for this prospective study. The image protocol included pre-contrast and delayed post-contrast spectral and Dixon fat-suppressed T1w series. Two independent blinded readers compared spectral and Dixon fat-suppressed series by evaluating six ordinal (1 worst to 5 best) image quality criteria (image quality, delineation of anatomical structures, fat suppression in the breast and axilla, lesion delineation and internal enhancement). Breast density and size were assessed. Data analysis included Spearman's rank correlation coefficient and visual grading characteristics (VGC) analysis. Four examinations were excluded; 48 examinations in 46 patients were evaluated. In VGC analysis, the Dixon technique was superior regarding image quality criteria analysed (P < 0.01). Smaller breast size and lower breast density were significantly (P < 0.01) correlated with impaired spectral fat suppression quality. No such correlation was identified for the Dixon technique, which showed reconstruction-based water-fat mixups leading to insufficient image quality in 20.8 %. The Dixon technique outperformed spectral fat suppression in all evaluated criteria (P < 0.01). Non-diagnostic examinations can be avoided by fat and water image reconstruction. The superior image quality of the Dixon technique can improve breast MRI interpretation. (orig.)

  13. 中国特色社会主义的两大现实优越性%Two Realistic Superiorities of the Socialism with Chinese Characteristics

    Institute of Scientific and Technical Information of China (English)

    竟辉

    2016-01-01

    With innovating the theoretical form of Marxism,the socialism with Chinese characteristics is a practical form of scientific socialism in contemporary China.The socialism with Chinese characteristics is very different from the Soviet Union socialism and the western capitalism,and it has two strong realistic superiorities.On the one hand,the socialism with Chinese characteristics adheres to the basic principles of scientific socialism and demonstrates the necessity and im-portance of one country’s socialist construction and reform based on the practice at home and abroad.At the same time, based on the basic national conditions of the socialist primary stage in our country,the socialism with Chinese character-istics has chosen and perfected the system of socialist market economy in the progress of Marxist sinicization,so it’s su-perior to the Soviet Union socialist model.On the other hand,the socialism with Chinese characteristics innovates the de-velopment pattern of human society and interprets the unity and diversity of world civilization development in the perspec-tive of contrasting the eastern and western culture.At the same time,based on analyzing the inside and outside dilemma of the western capitalist countries’current development,the socialism with Chinese characteristics has firmly established a “people-oriented”and “harmony”governing philosophy and injected a new vitality to the whole world civilization,so it’s also superior to the capitalist system of Western society.%中国特色社会主义创新了马克思主义的理论形式,是科学社会主义在当代中国的实践形态。它与苏联社会主义模式和西方资本主义制度有着重大区别,具有强大的现实优越性。一方面,它既坚持科学社会主义的基本原则,又从国内外实际出发论证了一国独立自主进行社会主义建设和改革的必要性与重要性,在不断推进马克思主义中国化的同时,立足于我国社

  14. Photoluminescence origin of nanocrystalline SiC films

    Institute of Scientific and Technical Information of China (English)

    LIU Ji-wen; LI Juan; LI Yan-hui; LI Chang-ling; ZHAO Yan-ping; ZHAO Jie; XU Jing-jun

    2005-01-01

    The nanocrystalline SiC films were prepared on Si (111) substrates by rf magnetron sputtering and then annealed at 800℃ and 1 000℃ for 30 minutes in a vacuum annealing system. The crystal structure and crystallization of as-annealed SiC films were determined by the Fourier transform infrared (FTIR) absorption spectra and the X-ray diffraction (XRD) analysis. Measurement of photoluminescence (PL) of the nanocrystalline SiC (nc-SiC) films shows that the blue light with 473 nm and 477 nm wavelengths emitted at room temperature and that the PL peak shifts to shorter wavelength side and the PL intensity becomes stronger as the annealing temperature decreases. The time-resolved spectrum of the PL at 477 nm exhibits a bi-exponential decay process with lifetimes of 600 ps and 5 ns and a characteristic of the direct band gap.The strong blue light emission with short PL lifetimes suggests that the quantum confinement effect of the SiC nanocrystals resulted in the radiative recombination of the direct optical transitions.

  15. Performance of bulk SiC radiation detectors

    CERN Document Server

    Cunningham, W; Lamb, G; Scott, J; Mathieson, K; Roy, P; Bates, R; Thornton, P; Smith, K M; Cusco, R; Glaser, M; Rahman, M

    2002-01-01

    SiC is a wide-gap material with excellent electrical and physical properties that may make it an important material for some future electronic devices. The most important possible applications of SiC are in hostile environments, such as in car/jet engines, within nuclear reactors, or in outer space. Another area where the material properties, most notably radiation hardness, would be valuable is in the inner tracking detectors of particle physics experiments. Here, we describe the performance of SiC diodes irradiated in the 24 GeV proton beam at CERN. Schottky measurements have been used to probe the irradiated material for changes in I-V characteristics. Other methods, borrowed from III-V research, used to study the irradiated surface include atomic force microscope scans and Raman spectroscopy. These have been used to observe the damage to the materials surface and internal lattice structure. We have also characterised the detection capabilities of bulk semi-insulating SiC for alpha radiation. By measuring ...

  16. Fabrication and Properties of Ti3SiC2/SiC Composites

    Institute of Scientific and Technical Information of China (English)

    YIN Hongfeng; FAN Qiang; REN Yun; ZHANG Junzhan

    2008-01-01

    Ti3SiC2/SiC composites were fabricated by reactive hot pressing method. Effects of hot pressing temperature, the content and panicle size of SiC on phase composition, densification, mechanical properties and behavior of stress-strain of the composites were investigated. The results showed that:(1)Hot-pressing temperature influenced the phase composition of Ti3SiC2/SiC composites. The flexural strength and fracture toughness of composites increased with hot pressing temperature.(2)It became more difficult for the composites to densify when the content of SiC in composites increased. It need be sintered at higher temperature to get denser composite. The flexural strength and fracture toughness of composites increased when the content of SiC added in composites increased. However, when the content of SiC reached 50 wt%, the flexural strength and fracture toughness of composites decreased due to high content of pore in composites.(3)When the content of SiC was same, Ti3SiC2/SiC composites were denser while the particle size of SiC added in composites is 12.8μm compared with the composites that the particle size of SiC added is 3μm.The flexural strength and fracture toughness of composites increased with the increase of particle size of SiC added in composites.(4)Ti3SiC2/SiC composites were non-brittle fracture at room temperature.

  17. Polycrystalline SiC as source material for the growth of fluorescent SiC layers

    DEFF Research Database (Denmark)

    Kaiser, M.; Hupfer, T.; Jokubavicus, V.;

    2013-01-01

    Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport...

  18. A Novel DBC Layout for Current Imbalance Mitigation in SiC MOSFET Multichip Power Modules

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig; Beczkowski, Szymon

    2016-01-01

    This paper proposes a novel Direct Bonded Copper (DBC) layout for mitigating the current imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared to the traditional layout, the proposed DBC layout significantly reduces the circuit mismatch and current coupling effect......, which consequently improves the current sharing among the paralleled SiC MOSFET dies in power module. Mathematic analysis and circuit model of the DBC layout are presented to elaborate on the superior features of the proposed DBC layout. Simulation and experimental results further verify the theoretical...

  19. A Novel DBC Layout for Current Imbalance Mitigation in SiC MOSFET Multichip Power Modules

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig; Beczkowski, Szymon

    2016-01-01

    This letter proposes a novel direct bonded copper (DBC) layout for mitigating the current imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared to the traditional layout, the proposed DBC layout significantly reduces the circuit mismatch and current coupling effect......, which consequently improves the current sharing among the paralleled SiC MOSFET dies in power module. Mathematic analysis and circuit model of the DBC layout are presented to elaborate the superior features of the proposed DBC layout. Simulation and experimental results further verify the theoretical...

  20. SiC multi-layer protective coating on carbon obtained by thermionic vacuum arc method

    Science.gov (United States)

    Ciupina, V.; Lungu, C. P.; Vladoiu, R.; Epure, T.-D.; Prodan, G.; Roşca, C.; Porosnicu, C.; Jepu, I.; Belc, M.; Prodan, M.; Stanescu, I. M.; Stefanov, C.; Contulov, M.; Mandes, A.; Dinca, V.; Vasile, E.; Zarovschi, V.; Nicolescu, V.

    2013-09-01

    SiC single-layer or multi-layer on C used to improve the oxidation resistance and tribological properties of C have been obtained by Thermionic Vacuum Arc (TVA) method. The 200nm thickness carbon thin films was deposed on glass or Si substrate and then 100÷500 nm thickness SiC successively layers on carbon thin film was deposed. The microstructure and mechanical characteristics of as-prepared SiC coating were investigated by Transmission Electron Microscopy (TEM, STEM), Energy Dispersive X-Ray Spectroscopy (EDS), Electron Scattering Chemical Analysis (ESCA) and tribological techniques. Samples containing SiC single-layer or multi-layer coating on carbon were investigated up to 1000°C. The results of thermal treatments reveals the increase of oxidation resistance with increase of the number of SiC layers. The mechanism of oxidation protection is based on the reaction between SiC and elemental oxygen resulting SiO2 and CO. The tribological behavior of SiC coatings was evaluated with a tribometer with ball-on-disk configuration from CSM device with 6mm diameter sapphire ball, sliding speed in dry conditions being 0.2m/s, with normal contact loads of 0.5N, 1N, 1.5N and 2N, under unlubricated conditions. The friction coefficient on SiC was compared with the friction coefficient on uncoated carbon layer. Electrical surface resistance of SiC coating on carbon at different temperatures was measured comparing the potential drop on the sample with the potential drop on a series standard resistance in constant mode.

  1. Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results...... of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations...

  2. Synergistically toughening effect of SiC whiskers and nanoparticles in Al2O3-based composite ceramic cutting tool material

    Science.gov (United States)

    Liu, Xuefei; Liu, Hanlian; Huang, Chuanzhen; Wang, Limei; Zou, Bin; Zhao, Bin

    2016-06-01

    In recent decades, many additives with different characteristics have been applied to strengthen and toughen Al2O3-based ceramic cutting tool materials. Among them, SiC whiskers and SiC nanoparticles showed excellent performance in improving the material properties. While no attempts have been made to add SiC whiskers and SiC nanoparticles together into the ceramic matrix and the synergistically toughening effects of them have not been studied. An Al2O3-SiCw-SiCnp advanced ceramic cutting tool material is fabricated by adding both one-dimensional SiC whiskers and zero-dimensional SiC nanoparticles into the Al2O3 matrix with an effective dispersing and mixing process. The composites with 25 vol% SiC whiskers and 25 vol% SiC nanoparticles alone are also investegated for comparison purposes. Results show that the Al2O3-SiCw-SiCnp composite with both 20 vol% SiC whiskers and 5 vol% SiC nanoparticles additives have much improved mechanical properties. The flexural strength of Al2O3-SiCw-SiCnp is 730±95 MPa and fracture toughness is 5.6±0.6 MPa·m1/2. The toughening and strengthening mechanisms of SiC whiskers and nanoparticles are studied when they are added either individually or in combination. It is indicated that when SiC whiskers and nanoparticles are added together, the grains are further refined and homogenized, so that the microstructure and fracture mode ratio is modified. The SiC nanoparticles are found helpful to enhance the toughening effects of the SiC whiskers. The proposed research helps to enrich the types of ceramic cutting tool and is benefit to expand the application range of ceramic cutting tool.

  3. Synergistically toughening effect of SiC whiskers and nanoparticles in Al2O3-based composite ceramic cutting tool material

    Science.gov (United States)

    Liu, Xuefei; Liu, Hanlian; Huang, Chuanzhen; Wang, Limei; Zou, Bin; Zhao, Bin

    2016-09-01

    In recent decades, many additives with different characteristics have been applied to strengthen and toughen Al2O3-based ceramic cutting tool materials. Among them, SiC whiskers and SiC nanoparticles showed excellent performance in improving the material properties. While no attempts have been made to add SiC whiskers and SiC nanoparticles together into the ceramic matrix and the synergistically toughening effects of them have not been studied. An Al2O3-SiCw-SiCnp advanced ceramic cutting tool material is fabricated by adding both one-dimensional SiC whiskers and zero-dimensional SiC nanoparticles into the Al2O3 matrix with an effective dispersing and mixing process. The composites with 25 vol% SiC whiskers and 25 vol% SiC nanoparticles alone are also investegated for comparison purposes. Results show that the Al2O3-SiCw-SiCnp composite with both 20 vol% SiC whiskers and 5 vol% SiC nanoparticles additives have much improved mechanical properties. The flexural strength of Al2O3-SiCw-SiCnp is 730±95 MPa and fracture toughness is 5.6±0.6 MPa·m1/2. The toughening and strengthening mechanisms of SiC whiskers and nanoparticles are studied when they are added either individually or in combination. It is indicated that when SiC whiskers and nanoparticles are added together, the grains are further refined and homogenized, so that the microstructure and fracture mode ratio is modified. The SiC nanoparticles are found helpful to enhance the toughening effects of the SiC whiskers. The proposed research helps to enrich the types of ceramic cutting tool and is benefit to expand the application range of ceramic cutting tool.

  4. Analysis on partial thermal resistances of packaged SiC schottky barrier diodes at elevated temperatures

    Science.gov (United States)

    Kim, Taehwa; Funaki, Tsuyoshi

    2016-04-01

    This paper investigates the temperature dependence of partial thermal resistances of a packaged SiC schottky barrier diode (SBD) for high temperature applications. Transient thermal resistances of the packaged SiC SBD were measured and characterized in temperature range from 27 to 275 °C. The partial thermal resistances were extracted and analyzed using the cumulative and differential thermal structure functions. The extracted partial thermal resistances were compared to the results from the finite difference thermal model, and both results were in good agreement. The temperature dependence of the partial thermal resistance of the SiC device and the Si3N4 substrate contributes to the overall thermal characteristics variation of the packaged SiC SBD.

  5. Research Progress on Preparation for Biomass-based SiC Ceramic

    Directory of Open Access Journals (Sweden)

    CUI He-shuai

    2017-08-01

    Full Text Available Silicon carbide (SiC ceramics prepared by the conventional process has excellent properties and wide application prospects, but the increased cost of high-temperature preparation process restricts its further development. In contrast, the abundant porous structure of biomass makes itself to be ideal replacement of SiC ceramic prepared at low temperature. This paper reviewed the structure characteristics, preparation methods, pyrolysis mechanism and influence parameters of biomass-based SiC ceramic, and eventually explored the current problems and development trends of the pretreatment of carbon source and silicon source, the pyrolysis process and the application research on the preparation for biomass-based SiC ceramic.

  6. Sporadic SICs and the Normed Division Algebras

    Science.gov (United States)

    Stacey, Blake C.

    2017-08-01

    Symmetric informationally complete quantum measurements, or SICs, are mathematically intriguing structures, which in practice have turned out to exhibit even more symmetry than their definition requires. Recently, Zhu classified all the SICs whose symmetry groups act doubly transitively. I show that lattices of integers in the complex numbers, the quaternions and the octonions yield the key parts of these symmetry groups.

  7. Fluorescent SiC with pseudo-periodic moth-eye structures

    DEFF Research Database (Denmark)

    Ou, Yiyu; Aijaz, Imran; Ou, Haiyan

    2012-01-01

    material much superior to the phosphors in terms of high color rendering index value and long lifetime. The light extraction efficiency of the fluorescent SiC based all semiconductor LED light sources is usually low due to the large refractive index difference between the semiconductor and air. In order...... to enhance the extraction efficiency, we present a simple method to fabricate the pseudo-periodic moth-eye structures on the surface of the fluorescent SiC. A thin gold layer is deposited on the fluorescent SiC first. Then the thin gold layer is treated by rapid thermal processing. After annealing, the thin...... gold layer turns into discontinuous nano-islands. The average size of the islands is dependent on the annealing condition which could be well controlled. By using the reactive-ion etching, pseudo-periodic moth-eye structures would be obtained using the gold nano-islands as a mask layer. Reactive...

  8. SiC nanowires: material and devices

    Science.gov (United States)

    Zekentes, K.; Rogdakis, K.

    2011-04-01

    SiC nanowires are of high interest since they combine the physical properties of SiC with those induced by their low dimensionality. For this reason, a large number of scientific studies have been dedicated to their fabrication and characterization as well as to their application in devices. SiC nanowires' growth involving different growth mechanisms and configurations was the main theme for the large majority of these studies. Various physical characterization methods have been employed for evaluating SiC nanowire quality. SiC nanowires with narrow-diameter (channel material. On the other hand, the grown nanowires are suitable for field-emission applications and to be used as reinforcing material in composite structures as well as for increasing the hydrophobicity of Si surfaces. All these aspects are examined in detail in different sections of this paper.

  9. POWDER INJECTION MOLDING OF SIC FOR THERMAL MANAGEMENT V

    Directory of Open Access Journals (Sweden)

    Valmikanathan Onbattuvelli

    2012-06-01

    Full Text Available Silicon carbide (SiC exhibits many functional properties that are relevant to applications in electronics, aerospace, defense and automotive industries. However, the successful translation of these properties into final applications lies in the net-shaping of ceramics into fully dense microstructures. Increasing the packing density of the starting powders is one effective route to achieve high sintered density and dimensional precision. The present paper presents an in-depth study on the effects of nanoparticle addition on the powder injection molding process (PIM of SiC powder-polymer mixtures. In particular, bimodal mixtures of nanoscale and sub-micrometer particles are found to have significantly increased powder packing characteristics (solids loading in the powder-polymer mixtures. The influence of nanoparticle addition on the multi-step PIM process is examined. The above results provide new perspectives which could impact a wide range of materials, powder processing techniques and applications.

  10. Effect of Ductile Agents on the Dynamic Behavior of SiC3D Network Composites

    Science.gov (United States)

    Zhu, Jingbo; Wang, Yangwei; Wang, Fuchi; Fan, Qunbo

    2016-10-01

    Co-continuous SiC ceramic composites using pure aluminum, epoxy, and polyurethane (PU) as ductile agents were developed. The dynamic mechanical behavior and failure mechanisms were investigated experimentally using the split Hopkinson pressure bar (SHPB) method and computationally by finite element (FE) simulations. The results show that the SiC3D/Al composite has the best overall performance in comparison with SiC3D/epoxy and SiC3D/PU composites. FE simulations are generally consistent with experimental data. These simulations provide valuable help in predicting mechanical strength and in interpreting the experimental results and failure mechanisms. They may be combined with micrographs for fracture characterizations of the composites. We found that interactions between the SiC phase and ductile agents under dynamic compression in the SHPB method are complex, and that interfacial condition is an important parameter that determines the mechanical response of SiC3D composites with a characteristic interlocking structure during dynamic compression. However, the effect of the mechanical properties of ductile agents on dynamic behavior of the composites is a second consideration in the production of the composites.

  11. Lateral boron distribution in polycrystalline SiC source materials

    DEFF Research Database (Denmark)

    Linnarsson, M. K.; Kaiser, M.; Liljedahl, R.

    2013-01-01

    Polycrystalline SiC containing boron and nitrogen are used in growth of fluorescent SiC for white LEDs. Two types of doped polycrystalline SiC have been studied in detail with secondary ion mass spectrometry: sintered SiC and poly-SiC prepared by sublimation in a physical vapor transport setup...

  12. From SICs and MUBs to Eddington

    CERN Document Server

    Bengtsson, Ingemar

    2011-01-01

    This is a survey of some very old knowledge about Mutually Unbiased Bases (MUB) and Symmetric Informationally Complete POVMs (SIC). In prime dimensions the former are closely tied to an elliptic normal curve symmetric under the Heisenberg group, while the latter are believed to be orbits under the Heisenberg group in all dimensions. In dimensions 3 and 4 the SICs are understandable in terms of elliptic curves, but a general statement escapes us. The geometry of the SICs in 3 and 4 dimensions is discussed in some detail.

  13. Acoustic Response of Laminated SiC Ceramics

    Science.gov (United States)

    Esquivel-Sirvent, Raul; Noguez, Cecilia

    1996-03-01

    We present a theoretical calculation of the reflectivity of compressional elastic waves propagating through a laminated structure made of alternate layers of SiC and porous SiC. During fabrication, defects like variation of the period of the structure or variations in the porosity, can be present. By calculating the reflectivity spectra, we can assess the feasibility of using acoustic measuring techniques to characterize these laminated structures. Our results show that, for an ordered structure where the period and porosity of the laminated structure is constant, the reflectivity spectra starts showing the characteristic band structure of waves propagating in infinite superlattices. To simulate fabrication defects, first the period of the structure is changed by randomly varing the thickness of the porous layers. The reflectivity shows that variations in the period induce strong changes in the reflectivity spectra (i.e transmission is enhanced). In comparison, when the period remains constant and the porosity of the SiC porous layers is varied randomly, we observe that even when the porosity changes randomly by up to 50%, the reflectivity spectra does not show significant changes. Finally the case when both period and porosity are varied and when one of the porous layers is missing from the structure will also be discussed.

  14. Effects of SiC amount on phase compositions and properties of Ti3SiC2-based composites

    Institute of Scientific and Technical Information of China (English)

    蔡艳芝; 殷小玮; 尹洪峰

    2015-01-01

    The phase compositions and properties of Ti3SiC2-based composites with SiC addition of 5%−30% in mass fraction fabricated by in-situ reaction and hot pressing sintering were studied. SiC addition effectively prevented TiC synthesis but facilitated SiC synthesis. The Ti3SiC2/TiC−SiC composite had better oxidation resistance when SiC added quantity reached 20% but poorer oxidation resistance with SiC addition under 15%than Ti3SiC2/TiC composite at higher temperatures. There were more than half of the original SiC and a few Ti3SiC2 remaining in Ti3SiC2/TiC−SiC with 20% SiC addition, but all constituents in Ti3Si2/TiC composite were oxidized after 12 h in air at 1500 °C. The oxidation scale thickness of TS30, 1505.78μm, was near a half of that of T, 2715μm, at 1500 °C for 20 h. Ti3SiC2/TiC composite had a flexural strength of 474 MPa, which was surpassed by Ti3SiC2/TiC−SiC composites when SiC added amount reached 15%. The strength reached the peak of 518 MPa at 20%SiC added amount.

  15. Experimental determination of grain density function of AZ91/SiC composite with different mass fractions of SiC and undercoolings using heterogeneous nucleation model

    Directory of Open Access Journals (Sweden)

    J. Lelito

    2011-02-01

    Full Text Available The grain density, Nv, in the solid state after solidification of AZ91/SiC composite is a function of maximum undercooling, ΔT, of a liquid alloy. This type of function depends on the characteristics of heterogeneous nucleation sites and number of SiC present in the alloy. The aim of this paper was selection of parameters for the model describing the relationship between the grain density of primary phase and undercooling. This model in connection with model of crystallisation, which is based on chemical elements diffusion and grain interface kinetics, can be used to predict casting quality and its microstructure. Nucleation models have parameters, which exact values are usually not known and sometimes even their physical meaning is under discussion. Those parameters can be obtained after mathematical analysis of the experimental data. The composites with 0, 1, 2, 3 and 4wt.% of SiC particles were prepared. The AZ91 alloy was a matrix of the composite reinforcement SiC particles. This composite was cast to prepare four different thickness plates.They were taken from the region near to the thermocouple, to analyze the undercooling for different composites and thickness plates and its influence on the grain size. The microstructure and thermal analysis gave set of values that connect mass fraction of SiC particles, and undercooling with grain size. These values were used to approximate nucleation model adjustment parameters. Obtained model can be very useful in modelling composites microstructure.

  16. Lat.SIC - roum şi

    Directory of Open Access Journals (Sweden)

    Maria Iliescu

    1991-12-01

    Full Text Available In Jatina populară şi tîrzie ET 'şi' începe să fie întărit prin SIC 'astfel'. Locutiunea ET SIC putea avea sensurile 'şi astfel', 'şi apoi', 'şi imediat', 'şi deasemenea' sau nu mai şi'. Cu timpul s-a pierdut uneori determinantul ET şi SIC singur a inceput să exprime sensurile de mai sus. Astfel se explică etimologia şi accepţiunile rom. şi, conjunctie şi adverb. Se remană de asemenea că evoluţie semantica a lui SIC în română asta pînă la un punct identică cu cea din franceza veche.

  17. High Power Silicon Carbide (SiC) Power Processing Unit Development

    Science.gov (United States)

    Scheidegger, Robert J.; Santiago, Walter; Bozak, Karin E.; Pinero, Luis R.; Birchenough, Arthur G.

    2015-01-01

    NASA GRC successfully designed, built and tested a technology-push power processing unit for electric propulsion applications that utilizes high voltage silicon carbide (SiC) technology. The development specifically addresses the need for high power electronics to enable electric propulsion systems in the 100s of kilowatts. This unit demonstrated how high voltage combined with superior semiconductor components resulted in exceptional converter performance.

  18. SiC Conversion Coating Prepared from Silica-Graphite Reaction

    Directory of Open Access Journals (Sweden)

    Back-Sub Sung

    2017-01-01

    Full Text Available The β-SiC conversion coatings were successfully synthesized by the SiO(v-graphite(s reaction between silica powder and graphite specimen. This paper is to describe the effects on the characteristics of the SiC conversion coatings, fabricated according to two different reaction conditions. FE-SEM, FE-TEM microstructural morphologies, XRD patterns, pore size distribution, and oxidation behavior of the SiC-coated graphite were investigated. In the XRD pattern and SAD pattern, the coating layers showed cubic SiC peak as well as hexagonal SiC peak. The SiC coatings showed somewhat different characteristics with the reaction conditions according to the position arrangement of the graphite samples. The SiC coating on graphite, prepared in reaction zone (2, shows higher intensity of beta-SiC main peak (111 in XRD pattern as well as rather lower porosity and smaller main pore size peak under 1 μm.

  19. High efficiency battery converter with SiC devices for residential PV systems

    DEFF Research Database (Denmark)

    Pham, Cam; Teodorescu, Remus; Kerekes, Tamas

    2013-01-01

    The demand for high efficiency and higher power density is a challenge for Si-based semiconductors due to the physical characteristics of material. These can be overcome by employing wide-band-gap materials like SiC. This paper compares a second generator SiC MOSFETs against a normally-on Trench ...... JFETs and theirs performances in a high efficiency battery converter for residential photovoltaic systems. The prototypes are 3 kW converters with more than 98% efficiency and high simplicity and power density....

  20. 1700 V SiC Schottky diodes scaled to 25 A

    Energy Technology Data Exchange (ETDEWEB)

    Peters, D.; Dohnke, K.O.; Hecht, C.; Stephani, D. [SiCED Electronics Development Ltd., Erlangen (Germany)

    2001-07-01

    This paper reports on a study of SiC Schottky diodes focused on high current rating and high blocking voltage: 25 A / 1200 V and 1700V, resp. With an active area of 10 mm{sup 2} we successfully explored new ground for SiC devices. The device concept, fabrication process, yield aspects and measured results of static and dynamic characteristics as well as the temperature behavior are described. The reverse currents are very low (<500 {mu}A) even at 125 C and their temperature dependence is lower than expected by thermionic emission since tunneling mechanisms through the Schottky barrier rule the current transport at high blocking voltages. (orig.)

  1. Design, preparation and microwave absorbing properties of resin matrix composites reinforced by SiC fibers with different electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Haitao, E-mail: xzddlht@163.com [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073 (China); Science and Technology on Scramjet Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073 (China); Cheng, Haifeng; Tian, Hao [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

    2014-01-15

    Highlights: • SSMASs have better microwave absorbing properties in smaller thickness. • SSMASs can be realized by SiC fibers with different electrical resistivity. • Resistivity of SiC fibers can be regulated by adjusting surface characteristics. • The bandwidth of SSMASs at reflectivity below −10 dB can reach 11.6 GHz. -- Abstract: One kind of sandwich structure microwave absorbing structures (SSMASs) derived from Salisbury absorbers is reported. The impedance characteristics of SSMASs are analyzed, and the mechanisms of broadening microwave absorbing bandwidth are interpreted by Smith chart. In order to realize SSMASs, high electrical resistivity SiC fibers with Si–C–O surface layers and low electrical resistivity SiC fibers with pyrocarbon surface layers are employed and analyzed by SEM, XPS, AES and HRTEM. The conductive model of SiC fibers with pyrocarbon layers is built and electrical resistivity simulation is done. The SSMASs are fabricated by employing plain woven SiC fiber fabrics with high and low electrical resistivity as reinforcements of dielectric layers and lossy layer, respectively. The microwave absorbing properties of SSMASs are measured and compared with simulated results. The results show that the experimental and simulated results are in good agreement, the SSMASs have better wideband microwave absorbing properties, and the microwave absorbing bandwidth at reflectivity below −10 dB can reach 11.6 GHz.

  2. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States)] [and others

    1997-04-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on identification of the most effective joining methods for scale-up to large tube assemblies, including joining using SiC produced in situ from chemical precursors. During FY 1996, a new microwave applicator was designed, fabricated and tested that provides the capability for vacuum baking of the specimens and insulation and for processing under inert environment. This applicator was used to join continuous fiber-reinforced (CFCC) SiC/SiC composites using a polymer precursor to form a SiC interlayer in situ.

  3. Influence of Ni-P Coated SiC and Laser Scan Speed on the Microstructure and Mechanical Properties of IN625 Metal Matrix Composites

    Science.gov (United States)

    Sateesh, N. H.; Kumar, G. C. Mohan; Krishna, Prasad

    2015-12-01

    Nickel based Inconel-625 (IN625) metal matrix composites (MMCs) were prepared using pre-heated nickel phosphide (Ni-P) coated silicon carbide (SiC) reinforcement particles by Direct Metal Laser Sintering (DMLS) additive manufacturing process under inert nitrogen atmosphere to obtain interface influences on MMCs. The distribution of SiC particles and microstructures were characterized using optical and scanning electron micrographs, and the mechanical behaviours were thoroughly examined. The results clearly reveal that the interface integrity between the SiC particles and the IN625 matrix, the mixed powders flowability, the SiC ceramic particles and laser beam interaction, and the hardness, and tensile characteristics of the DMLS processed MMCs were improved effectively by the use of Ni-P coated SiC particles.

  4. Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

    Science.gov (United States)

    Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Iannello, Christopher J.; Del Castillo, Linda Y.; Fitzpatrick, Fred D.; Mojarradi, Mohammad M.; Chen, Yuan

    2016-01-01

    Silicon carbide (SiC) power devices have demonstrated many performance advantages over their silicon (Si) counterparts. As the inherent material limitations of Si devices are being swiftly realized, wide-band-gap (WBG) materials such as SiC have become increasingly attractive for high power applications. In particular, SiC power metal oxide semiconductor field effect transistors' (MOSFETs) high breakdown field tolerance, superior thermal conductivity and low-resistivity drift regions make these devices an excellent candidate for power dense, low loss, high frequency switching applications in extreme environment conditions. In this paper, a novel power processing unit (PPU) architecture is proposed utilizing commercially available 4H-SiC power MOSFETs from CREE Inc. A multiphase straight boost converter topology is implemented to supply up to 10 kilowatts full-scale. High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) characterization is performed to evaluate the long-term reliability of both the gate oxide and the body diode of the SiC components. Finally, susceptibility of the CREE SiC MOSFETs to damaging effects from heavy-ion radiation representative of the on-orbit galactic cosmic ray environment are explored. The results provide the baseline performance metrics of operation as well as demonstrate the feasibility of a hard-switched PPU in harsh environments.

  5. Effect of reinforcement of AL-6063 with SiC on mechanical behavior and microstructure of metal matrix composites

    Directory of Open Access Journals (Sweden)

    M. K. Aravindan

    2014-03-01

    Full Text Available A phrase heard often in recent years, advanced composite materials like Al/SiC metal matrix composite is gradually becoming very important materials in auto and aerospace industries due to their superior properties. The present study examines the mechanical properties of aluminum (Al-6063/SiC Silicon carbide reinforced particles metal-matrix composites (MMCs by varying weight fractions of SiC. For this (Al-6063/SiC reinforced particles MMCs are fabricated by stir casting method at air atmosphere . The MMCs are prepared in the form of bars with varying the reinforced particles by weight fraction ranging from 2 %, 4 %, 6 %, 8 % and 10 %. The reinforced particles size of SiC is varying between 25-40 microns. The microstructure study shows that the distribution of particles becomes better with increasing weight fraction of SiC. The Mechanical properties like, Ultimate tensile strength (MPa, % Elongation, Hardness (HRB, Yield Strength (N.m are investigated on prepared specimens of MMCs. It was observed that the hardness of the composite is increased gradually from 2-6 % and drastically from 8-10%. The tensile strength and ultimate break load are increased with rising of reinforced weight fraction and the improvement varies between 15.8- 27 % and 2-15 % respectively.

  6. Vacuum brazing of high volume fraction SiC particles reinforced aluminum matrix composites

    Science.gov (United States)

    Cheng, Dongfeng; Niu, Jitai; Gao, Zeng; Wang, Peng

    2015-03-01

    This experiment chooses A356 aluminum matrix composites containing 55% SiC particle reinforcing phase as the parent metal and Al-Si-Cu-Zn-Ni alloy metal as the filler metal. The brazing process is carried out in vacuum brazing furnace at the temperature of 550°C and 560°C for 3 min, respectively. The interfacial microstructures and fracture surfaces are investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy spectrum analysis (EDS). The result shows that adequacy of element diffusion are superior when brazing at 560°C, because of higher activity and liquidity. Dislocations and twins are observed at the interface between filler and composite due to the different expansion coefficient of the aluminum alloy matrix and SiC particles. The fracture analysis shows that the brittle fracture mainly located at interface of filler and composites.

  7. 29 CFR 510.21 - SIC codes.

    Science.gov (United States)

    2010-07-01

    ... 29 Labor 3 2010-07-01 2010-07-01 false SIC codes. 510.21 Section 510.21 Labor Regulations Relating to Labor (Continued) WAGE AND HOUR DIVISION, DEPARTMENT OF LABOR REGULATIONS IMPLEMENTATION OF THE MINIMUM WAGE PROVISIONS OF THE 1989 AMENDMENTS TO THE FAIR LABOR STANDARDS ACT IN PUERTO RICO...

  8. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I. [FM Technologies, Inc., Fairfax, VA (United States); Black, W.M. [George Mason Univ., Fairfax, VA (United States)] [and others

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  9. Universal Converter Using SiC

    Energy Technology Data Exchange (ETDEWEB)

    Dallas Marckx; Brian Ratliff; Amit Jain; Matthew Jones

    2007-01-01

    The grantee designed a high power (over 1MW) inverter for use in renewable and distributed energy systems, such as PV cells, fuel cells, variable speed wind turbines, micro turbines, variable speed gensets and various energy storage methods. The inverter uses 10,000V SiC power devices which enable the use of a straight-forward topology for medium voltage (4,160VAC) without the need to cascade devices or topologies as is done in all commercial, 4,160VAC inverters today. The use of medium voltage reduces the current by nearly an order of magnitude in all current carrying components of the energy system, thus reducing size and cost. The use of SiC not only enables medium voltage, but also the use of higher temperatures and switching frequencies, further reducing size and cost. In this project, the grantee addressed several technical issues that stand in the way of success. The two primary issues addressed are the determination of real heat losses in candidate SiC devices at elevated temperature and the development of high temperature packaging for SiC devices.

  10. Passive SiC irradiation temperature monitor

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.

    1996-04-01

    A new, improved passive irradiation temperature monitoring method was examined after an irradiation test at 627{degrees}C. The method is based on the analysis of thermal diffusivity changes during postirradiation annealing of polycrystalline SiC. Based on results from this test, several advantages for using this new method rather than a method based on length or lattice parameter changes are given.

  11. Rapid manufacturing of SiC molds with micro-sized holes using abrasive water jet

    Institute of Scientific and Technical Information of China (English)

    Bo-Sung SHIN; Kang-Su PARK; Yeon-Kyoung BAHK; Sun-Ki PARK; Jung-Han LEE; Jeung-Sang GO; Myung-Chang KANG; Chae-Moon LEE

    2009-01-01

    Silicon carbide (SIC) is highly wear resistant with good mechanical properties, including high temperature strength, excellent chemical resistance, and high thermal conductivity and thermal shock resistance. SiC molds, which can be produced with diverse microstructural features, are now widely used in glass molding owing to their excellent characteristics, and also have potential applicability in IT industries. SiC molds are traditionally fabricated by silicon micromachining or dicing. The fabrication cost of silicon micromachining is very high, however, because several expensive masks are needed. Furthermore, the fabrication time is very long. Meanwhile, it is difficult to make micro-patterned molds with arbitrary shapes using dicing saws. Abrasive water jet (AWJ) is widely applied to cut and drill very brittle, soft and fibrous materials. It offers high energy density, the absence of a heat affected zone(HAZ), high performance, and an environment friendly process. In spite of these advantages, micro-hole drilling via conventional AWJ processing suffers from notable shortcomings. We proposed a new abrasive supplying method of AWJ. The proposed method reduces frosting phenomena, and provides micro-machining of AWJ. The characteristics of a hole machined was investigated by the proposed AWJ process according to the ratio of water and abrasives. With the optimal experimental conditions, 3 × 3 array SiC molds with the diameter of 700 μm and depth of 900 μm were successfully manufactured.

  12. EFFECT OF SiC PARTICLE SIZE ON THE MATERIAL AND MECHANICAL PROPERTIES OF MULLITE BONDED SiC CERAMICS PROCESSED BY INFILTRATION TECHNIQUE

    National Research Council Canada - National Science Library

    Sanchita Baitalik; Nijhuma Kayal; Dey Atanu; Chakrabarti Omprakash

    2014-01-01

    The influence of SiC particles size on the bonding phase content, microstructure, SiC oxidation degree, flexural strength, porosity and pore size distribution of mullitebonded porous SiC ceramics were...

  13. SiC纤维表面去碳处理对PIP-SiCf/SiC复合材料力学性能以及界面影响%Effects of Carbon Coating Removal of SiC Fiber on Mechanical Properties and Interface Characteristics of 2D-SiCf/SiC Composites

    Institute of Scientific and Technical Information of China (English)

    刘海韬; 程海峰; 王军; 唐耿平; 周旺; 郑文伟

    2011-01-01

    采用强度测试、SEM、HRTEM等分析测试手段对纤维表面去碳前后SiC纤维强度、复合材料力学性能、纤维表面形貌、复合材料断口形貌以及复合材料界面特征进行分析表征.结果表明,去碳处理后,纤维表面的固有缺陷暴露出来,纤维强度下降约15%,但由其制备的复合材料强度下降只有原纤维制备复合材料的1/6;复合材料断口非常平整,纤维增韧效果差.分析表明,由于去碳后纤维表面缺陷增多,界面的物理结合增强以及由于基体开裂导致的纤维物理损伤加剧;去碳处理后纤维表面化学反应活性中心明显增加,导致界面化学结合和纤维化学损伤加剧.过强的界面结合和低的纤维就位强度使复合材料力学性能严重恶化.%The SiC fiber tensile strength and mechanical properties of 2D-SiCf/SiC composites, the fiber surface morphology, composite fracture surface morphology and composite interface characteristics before and after removing carbon coating were analyzed and characterized by bundle tensile test, three-point bending test, SEM and HRTEM.The results show that inherent defects on the surface of SiC fiber are exposed after the carbon coating removal, and the tensile strength of SiC fiber decreases by about 1 5%.The flexural strength of 2D-SiCf/SiC composites after the carbon coating removal is only 30 MPa, which is the 1/6 times of that of composites prepared by the original fiber.The fracture surface of 2D-SiCr/SiC composites after the carbon coating removal is very even, which proves the fiber reinforced effects to be poor.The analyzed results indicate that because of the increase of defects after the carbon coating removal, the interfacial physical bonding strength and the fiber physical damage will all increase.At the same time, after the carbon coating removal,the chemical action active centers and the oxygen contents on the fiber surface will increase, the situation of that will bring about the

  14. Synthesis of High Purity SiC Powder for High-resistivity SiC Single Crystals Growth

    Institute of Scientific and Technical Information of China (English)

    Li WANG; Xiaobu HU; Xiangang XU; Shouzheng JIANG; Lina NING; Minhua JIANG

    2007-01-01

    High purity silicon carbide (SiC) powder was synthesized in-situ by chemical reaction between silicon and carbon powder. In order to ensure that the impurity concentration of the resulting SiC powder is suitable for high-resistivity SiC single crystal growth, the preparation technology of SiC powder is different from that of SiC ceramic. The influence of the shape and size of carbon particles on the morphology and phase composition of the obtained SiC powder were discussed. The phase composition and morphology of the products were investigated by X-ray diffraction, Raman microspectroscopy and scanning electron microscopy. The results show that the composition of resulting SiC by in-situ synthesis from Si/C mixture strongly depends on the nature of the carbon source, which corresponds to the particle size and shape, as well as the preparation temperature. In the experimental conditions, flake graphite is more suitable for the synthesis of SiC powder than activated carbon because of its relatively smaller particle size and flake shape, which make the conversion more complete. The major phase composition of the full conversion products is β-SiC, with traces of α-SiC.Glow discharge mass spectroscopy measurements indicated that SiC powder synthesized with this chemical reaction method can meet the purity demand for the growth of high-resistivity SiC single crystals.

  15. Immunochemical faecal occult blood tests have superior stability and analytical performance characteristics over guaiac-based tests in a controlled in vitro study.

    LENUS (Irish Health Repository)

    Lee, Chun Seng

    2011-06-01

    The aims of this study were (1) to determine the measurement accuracy of a widely used guaiac faecal occult blood test (gFOBT) compared with an immunochemical faecal occult blood test (iFOBT) during in vitro studies, including their analytical stability over time at ambient temperature and at 4°C; and (2) to compare analytical imprecision and other characteristics between two commercially available iFOBT methods.

  16. Tensile Characteristics of Bond of Stainless Steel Overlay Weld after Absorption of Hydrogen : Study on a Stainless Steel Overlay Welding Process for Superior Resistance to Disbonding (Report 4)

    OpenAIRE

    Akiyoshi, FUJI; Etsuo, KUDO; Tomoyuki, TAKAHASHI; The Japan Steel Works, Ltd., Muroran Plant

    1987-01-01

    The tensile characteristics of the bond of the disbanding-resistant overlay weld after absorption of hydrogen were studied and compared with those of the conventional overlay weld. It was found that the tensile strength of the bond of the conventional overlay weld was lower than that of the disbanding-resistant overlay weld. This is due to existence of the coarse planar grains in first layer overlay weld metal adjacent to the bond. The coarse planar grains strongly reduce the resistance to hy...

  17. Point Defects in SiC

    Science.gov (United States)

    Zvanut, Mary Ellen

    2004-03-01

    Production of high frequency, high power electronic devices using wide bandgap semiconductors has spurred renewed interest in point defects in SiC. Recent electron paramagnetic resonance (EPR) spectroscopy studies focus on centers in as-grown high purity semi-insulating substrates because intrinsic defects are thought to compensate unavoidable shallow centers, thus creating the high resistivity required. The EPR studies address the chemical/structural composition of the defects, the defect level (energy with respect to a band edge with which the defect can accept or release an electron) and thermal stability. Thus far, the positively charged carbon vacancy, the Si vacancy, a carbon-vacancy/carbon antisite pair, and several as yet-unidentified centers have been observed in as-grown electronic-grade 4H-SiC [1-3]. The talk will review the types of defects recently identified in SiC and discuss their possible relationship to compensation. The photo-induced EPR experiments used to determine defect levels will be discussed, with a particular focus on the carbon vacancy. The use of high frequency EPR to resolve the many different types of centers in SiC will also be covered. Finally, the presentation will review the thermal stability of the intrinsic defects detected in as-grown 4H SiC. 1. M. E. Zvanut and V. V. Konovalov, Appl. Phys. Lett. 80, 410 (2002). 2. N.T. Son, Z. Zolnai, and E. Janzen, Phys. Rev. B64, 2452xx (2003). 3. W.E. Carlos, E.R. Glaser, and B.V. Shanabrook, in Proceedings of the 22nd conference on Defects in Semiconductors, Aarhus, Denmark, July 2003.

  18. SiC Schottky diode electrothermal macromodel

    OpenAIRE

    Masana Nadal, Francisco

    2010-01-01

    This paper presents a SiC Schottky diode model including static, dynamic and thermal features implemented as separate parameterized blocks constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources. The parameters for each block are easy to extract, even from readily available diode data sheet information. The model complexity is low thus allowing reasonably long simulation times to cope with the rather slow self heating process and yet accurate enough for practical purposes.

  19. Characterization and Comparison of Planar and Trench Silicon Carbide (SiC) Power MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhiqiang [ORNL; Chinthavali, Madhu Sudhan [ORNL; Campbell, Steven L [ORNL

    2016-01-01

    This paper presents a comprehensive evaluation and experimental comparison of silicon carbide power MOSFETs through double pulse test. First, a universal hardware platform is designed and developed to test power semiconductor devices with various device packages and measuring requirements. Using the developed platform, the static characteristics and switching performance of the two types of SiC MOSFETs (one planar and one trench type) are evaluated under different case temperatures from 25 oC to 175 oC. Based on the evaluation data, a comparison of both SiC MOSFETs is conducted in terms of their on-state resistance, switching loss, and temperature dependent behavior. It is found that the latest trench SiC MOSFETs present similar switching loss while much lower conduction loss compared to existing commercial planar SiC MOSFETs. Moreover, the trench devices show a nearly temperature independent switching loss, which is beneficial to suppress the potential thermal runaway issue under high temperature continuous operation.

  20. Guard-ring termination for high-voltage SiC Schottky barrier diodes; Guard ring shutan kozo wo sonaeta kotaiatsu SiC Schottky barrier diode

    Energy Technology Data Exchange (ETDEWEB)

    Ueno, K.; Urushidani, T.; Seki, Y. [Fuji Electric Corporate Research and Development, Ltd., Kanagawa (Japan)

    1996-03-10

    Silicon carbide (SiC) has been attracting attention as a material for power devices, and has already demonstrated its favorable characteristics in Schottky barrier diodes (SBD) with gold or platinum. However, few researchers have discussed the device terminal structures, and the authors propose a simple, efficient guard-ring terminal structure. The SBD of SiC is prepared, with Al/Ti as the Schottky metals. The Al/Ti electrode forms a Schottky barrier with the n-type drift region, and an ohmic contact with the p-type region, i.e., guard-ring region. Resistance of this structure to voltage is determined by that of the mesa section of the p-n junction, and the mesa structure is formed by selective oxidation. The SBD shows a break-down voltage of 550V, which is roughly twice as high as that of an SBD having no guard-ring structure. 7 refs., 3 figs.

  1. Graphene nanoribbons anchored to SiC substrates

    Science.gov (United States)

    Le, Nam B.; Woods, Lilia M.

    2016-09-01

    Graphene nanoribbons are quasi-one-dimensional planar graphene allotropes with diverse properties dependent on their width and types of edges. Graphene nanoribbons anchored to substrates is a hybrid system, which offers novel opportunities for property modifications as well as experimental control. Here we present electronic structure calculations of zigzag graphene nanoribbons chemically attached via the edges to the Si or C terminated surfaces of a SiC substrate. The results show that the edge characteristics are rather robust and the properties are essentially determined by the individual nanoribbon. While the localized spin polarization of the graphene nanoribbon edge atoms is not significantly affected by the substrate, secondary energy gaps in the highest conduction and lowest valence region may emerge in the anchored structures. The van der Waals interaction together with the electrostatic interactions due to the polarity of the surface bonds are found to be important for the structure parameters and energy stability.

  2. Enhanced cycle stability of micro-sized Si/C anode material with low carbon content fabricated via spray drying and in situ carbonization

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dingsheng; Gao, Mingxia, E-mail: gaomx@zju.edu.cn; Pan, Hongge; Liu, Yongfeng; Wang, Junhua; Li, Shouquan; Ge, Hongwei

    2014-08-01

    Highlights: • Micro-sized Si/C composites were fabricated via. spray drying and carbonization. • Multi-morphology carbon was formed in the Si/C composites. • Si/C composite with 5.6 wt.% C provides significant improved cycling stability. • Multi-morphology carbon plays effective role in improving the electrochemical property. • The method provides potential for mass production of superior Si-based anode materials. - Abstract: Micro-sized Si/C composites with in situ introduced carbon of multi-morphology were fabricated via spray drying a suspension of commercial micro-sized Si and citric acid followed by a carbonization. Different ratios of Si to citric acid were used to optimize the composition and structure of the composites and thus the electrochemical performance. Carbon flakes including crooked and flat ones were well dispersed in between the Si particles, forming Si/C composites. Floc-like carbon layers and carbon fragments were also found to cover partially the Si particles. The Si/C composite with a low carbon content of 5.6 wt.% provides an initial reversible capacity of 2700 mA h/g and a capacity of 1860 mA h/g after 60 cycles at a current density of 100 mA/g as anode material for lithium-ion batteries (LIBs), which are much higher than those of pristine Si and the Si/C composites with higher carbon content. The mechanism of the enhancement of electrochemical performance of the micro-sized Si/C composite is discussed. The fabrication method and the structure design of the composites offer valuable potential in developing adaptable Si-based anode materials for industrial applications.

  3. Investigation on the Luminescent Properties of SiC

    Institute of Scientific and Technical Information of China (English)

    WANG Qiang; LI Yu-guo; SHI Li-wei; SHUN Hai-bo; XUE Cheng-shan

    2003-01-01

    Silicon carbide (SiC) is an excellent microelectronic material used to fabricate high frequency, high temperature,high power and non-volatile memory devices.But due to its indirect band gap,SiC based LED can't emit light so efficiently as GaN based LED, so people are eager to seek effective means to improve its luminescence efficiency. Amorphous SiC, porous crystalline SiC, nanometer SiC produced by CVD methods and porous SiC formed by ion implantation are investigated, and great progresses have been gained during the latest few years,which make SiC a promising material for developing OEIC.

  4. Mechanical Spectroscopy of MgB2 Containing Sic / Spektroskopia Mechaniczna MgB2 Zawierającego Sic

    Directory of Open Access Journals (Sweden)

    Silva M.R.

    2015-12-01

    Full Text Available The compound magnesium diboride (MgB2 has been well-known since the 1950s; however, its superconducting properties were unknown. Intrinsic characteristics of MgB2 make this material a promising candidate for technological applications, although the low value of the irreversibility field and the decrease in critical current density with the increase in the magnetic field considerably reduce its utility. The present work aimed to study the effect of carbon-based doping on anelastic properties of MgB2 as measured by mechanical spectroscopy. The samples were prepared by using the powder-intube method. The samples were made with 5, 7.5, and 10 wt.% of silicon carbide (SiC. The results reveal complex mechanical loss spectra caused by the interaction between point defects and surface defects in the crystalline lattice of MgB2.

  5. SiC Power MOSFET with Improved Gate Dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Sbrockey, Nick M; Tompa, Gary S; Spencer, Michael G; Chandrashekhar, Chandra MVS

    2010-08-23

    In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

  6. Graphene on SiC(0001 inspected by dynamic atomic force microscopy at room temperature

    Directory of Open Access Journals (Sweden)

    Mykola Telychko

    2015-04-01

    Full Text Available We investigated single-layer graphene on SiC(0001 by atomic force and tunneling current microscopy, to separate the topographic and electronic contributions from the overall landscape. The analysis revealed that the roughness evaluated from the atomic force maps is very low, in accord with theoretical simulations. We also observed that characteristic electron scattering effects on graphene edges and defects are not accompanied by any out-of-plane relaxations of carbon atoms.

  7. 500?C SiC JFET Driver Circuits and Packaging Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In the proposed development, SiC JFET control circuitry and normally-off SiC JFET power switch will be integrated in a single SiC chip that will provide digital...

  8. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Diffusion of Fission Product Surrogates

    Energy Technology Data Exchange (ETDEWEB)

    Henager, Charles H.; Jiang, Weilin

    2014-11-01

    MAX phases, such as titanium silicon carbide (Ti3SiC2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti3SiC2 has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti3SiC2. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti3SiC2, SiC, and a dual-phase nanocomposite of Ti3SiC2/SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti3SiC2 implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti3SiC2 occurs during ion implantation at 873 K. Cs in Ti3SiC2 is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti3SiC2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.

  9. SiC nanoparticles cyto- and genotoxicity to Hep-G2 cells

    Energy Technology Data Exchange (ETDEWEB)

    Barillet, Sabrina; Jugan, Mary-Line; Simon-Deckers, Angelique; Carriere, Marie [Laboratoire Pierre Suee, CEA-CNRS UMR9956, IRAMIS, CEA Saclay, 91191 Gif sur Yvette (France)], E-mail: marie.carriere@cea.fr; Leconte, Yann; Herlin-Boime, Nathalie; Mayne-l' Hermite, Martine; Reynaud, Cecile [Laboratoire Francis Perrin, CEA-CNRS URA2453, IRAMIS, CEA Saclay, 91191 Gif sur Yvette (France)

    2009-05-01

    While emerging nanotechnologies have seen significant development in recent years, knowledge on exposure levels as well as data on toxicity of nanoparticles are still quite limited. Indeed, there is a general agreement that development of nanotechnologies may lead to considerable dissemination of nanoparticles in the environment. Nevertheless, questions relative to toxicity versus innocuousness of such materials still remain. Our present study has thus been carried out with the purpose of assessing some aspects of toxicological capacities of three kinds of nano-sized particles: TiO{sub 2} and SiC nanoparticles, as well as multi-walled carbon nanotubes (CNT). In order to address the question of their potential toxicity toward living cells, we chose several cellular models. Assuming inhalation as the most probable exposure scenario, we used A549 alveolar epithelial cells as a model for mammalian primary target organ (lung). Furthermore, we considered that nanoparticles that would deposit into the pulmonary system may be translocated to the circulatory system. Thus, we decided to study the effect of nanoparticles on potentially secondary target organs: liver (WIF-B9, Can-10, HepG2) and kidneys (NRK-52E, LLC-PK1). Herein, we will focus our attention on results obtained on the HepG2 cell line exposed to SiC nanoparticles. Scarce literature exists on SiC nanotoxicology. According to the authors that have already carried out studies on this particular nanoparticle, it would seem that SiC nanoparticles do not induce cytotoxicity. That is one of the reasons of the potential use of these nanoparticles as biological labels [1]. We thus were interested in acquiring more data on biological effects induced by SiC nanoparticles. Furthermore, one of the particular aspects of the present study lies in the fact that we tried to specify the influence of physico-chemical characteristics of nanoparticles on toxicological endpoints (cytotoxicity and genotoxicity)

  10. High-voltage (> 1 kV) SiC Schottky barrier diodes with low on-resistance

    Energy Technology Data Exchange (ETDEWEB)

    Kimoto, Tsunenobu; Urushidani, Tatsuo; Kobayashi, Sota; Matsunami, Hiroyuki (Kyoto Univ. (Japan). Dept. of Electrical Engineering)

    1993-12-01

    Au/6H-SiC Schottky barrier diodes with high blocking voltages were successfully fabricated using layers grown by step-controlled epitaxy. A breakdown voltage over 1,100 V could be achieved, which is the highest ever reported for silicon carbide (SiC) Schottky barrier diodes. These high-voltage SiC rectifiers had specific on-resistances lower than the theoretical limits of Si rectifiers by more than one order of magnitude. The specific on-resistance increased with temperature according to T[sup 2.0] dependence. The diodes showed good characteristics at temperature as high as 400 C.

  11. Superior Hiking Trail

    Data.gov (United States)

    Minnesota Department of Natural Resources — Superior Hiking Trail main trail, spurs, and camp spurs for completed trail throughout Cook, Lake, St. Louis and Carlton counties. These data were collected with...

  12. Bathymetry of Lake Superior

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Bathymetry of Lake Superior has been compiled as a component of a NOAA project to rescue Great Lakes lake floor geological and geophysical data and make it more...

  13. Superior Hiking Trail Facilities

    Data.gov (United States)

    Minnesota Department of Natural Resources — Superior Hiking Trail main trail, spurs, and camp spurs for completed trail throughout Cook, Lake, St. Louis and Carlton counties. These data were collected with...

  14. Possibility of a 2D SiC monolayer formation on Mg(0001) and MgO(111) substrates

    Science.gov (United States)

    Kuzubov, A. A.; Eliseeva, N. S.; Krasnov, P. O.; Tomilin, F. N.; Fedorov, A. S.; Tolstaya, A. V.

    2013-08-01

    The geometrical characteristics of a 2D SiC monolayer on Mg(0001) and MgO(111) plates regarded as potential materials for growing two-dimensional silicon carbide were studied. The most favorable positions of the atoms of 2D SiC on the substrates were determined. In the 2D SiC/Mg(0001) system, unlike in 2D SiC/MgO(111), the deviation of the carbon atom from the silicon carbide monolayer was insignificant (0.08 Å). Consequently, magnesium can be used as a substrate for growing two-dimensional silicon carbide. The use of MgO(111) is not recommended because of a significant distortion of the 2D SiC surface.

  15. Advances in wide bandgap SiC for optoelectronics

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

    2014-01-01

    Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication...

  16. Challenges in Switching SiC MOSFET without Ringing

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig

    2014-01-01

    Switching SiC MOSFET without ringing in high frequency applications is important for meeting the EMI (ElectroMagnetic Interference) standard. Achieving a clean switching waveform of SiC MOSFET without additional components is becoming a challenge. In this paper, the switching oscillation mechanis...

  17. Prospects for SiC electronics and sensors

    Directory of Open Access Journals (Sweden)

    Nick G. Wright

    2008-01-01

    Full Text Available There has been substantial international research effort in the development of SiC electronics over the last ten years. With promising applications in power electronics, hostile-environment electronics, and sensors, there is considerable industrial interest in SiC as a material for electronics. However, issues relating to crystal growth and the difficulties of material processing have restricted SiC devices to relatively limited use to date. The eventual success of SiC as an electronic technology will depend on the close interplay of research in fundamental material science with progress in design of electronic devices and packaging. We review the current status of SiC electronics from a materials perspective – highlighting current difficulties and future opportunities for progress.

  18. Epitaxial sic devices for radiation dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Bruzzi, M; Menichelli, D.; Pini, S.; Sciortino, S. [INFN, Firenze (Italy); Firenze Univ., Firenze (Italy). Dipartimento di Energetica; Bucciolini, M. [INFN, Firenze (Italy); Firenze Univ., Firenze (Italy). Dipartimento di Fisiopatologia Clinica; Nava, F. [Modena Univ., Modena (Italy). Dipartimento di Fisica; INFN, Bologna (Italy)

    2002-07-01

    The current response of SiC on-line dosimeters to {gamma}-radiation from{sup 60}Co and {sup 167}Cs {gamma}-sources, X-photons and 22MeV electrons from linear accelerator has been investigated. The devices used are 4H-SiC epitaxial n-type layer deposited onto a 4H-SiC n{sup +} type substrate wafer doped with nitrogen. Single-pad Schottky contacts have been produced by deposition of a 1000A gold film on the epitaxial layer and ohmic contacts have been deposited on the rear substrate side. The detector has been then embedded in epoxy resin and studied in the dose and dose-rate ranges 0.1-1 Gy 0.1-10Gy/min. A signal response comparable to that of silicon standard dosimeters has been measured with the unbiased SiC device. The released charge and induced current have been observed to increase linearly respectively with the dose and dose-rate. A preliminary study on the changes in the sensibility of the device after a {gamma}-rays accumulated dose up to 10kGy is also presented.

  19. Growth and characterization of cubic SiC single-crystal films on Si

    Science.gov (United States)

    Powell, J. Anthony; Matus, L. G.; Kuczmarski, Maria A.

    1987-01-01

    Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.

  20. Modeling and design of a monolithically integrated power converter on SiC

    Science.gov (United States)

    Yu, L. C.; Sheng, K.; Zhao, J. H.

    2008-10-01

    To fully explore the high temperature and high power density potential of the 4H-SiC material, not only power devices need to be fabricated on SiC, but also the circuitries for signal generation/processing, gate driver and control. In this paper, static and dynamic characteristics of SiC lateral JFET (LJFET) devices are numerically simulated and compact circuit models developed. Based on these models, analog and digital integrated circuits functional blocks such as OPAMP, gate driver and logic gates are then designed and simulated. Finally, a fully integrated power converter including pulse-width-modulation circuit, over-temperature protection circuit and a power boost converter is designed and simulated. The converter has an input of 200 V and an output voltage of 400 V, 2.5 A, operating at 1 kW and 5 MHz.

  1. Ubiquitous interstellar diamond and SiC in primitive chondrites - Abundances reflect metamorphism

    Science.gov (United States)

    Huss, Gary R.

    1990-01-01

    It is shown here that interstellar diamond and SiC were incorporated into all groups of chondrite meteorites. Abundances rapidly go to zero with increasing metamorphic grade, suggesting that metamorphic destruction is responsible for the apparent absence of these grains in most chondrites. In unmetamorphosed chondrites, abundances normalized to matrix content are similar for different classes. Diamond samples from chondrites of different classes have remarkably similar noble-gas constants and isotropic compositions, although constituent diamonds may have come from many sources. SiC seems to be more diverse, partly because grains are large enough to measure individually, but average characteristics seem to be similar from meteorite to meteorite. These observations suggest that various classes of chondritic meteorites sample the same solar system-wide reservoir of interstellar grains.

  2. Superior sulcus tumors (Pancoast tumors).

    Science.gov (United States)

    Marulli, Giuseppe; Battistella, Lucia; Mammana, Marco; Calabrese, Francesca; Rea, Federico

    2016-06-01

    Superior Sulcus Tumors, frequently termed as Pancoast tumors, are a wide range of tumors invading the apical chest wall. Due to its localization in the apex of the lung, with the potential invasion of the lower part of the brachial plexus, first ribs, vertebrae, subclavian vessels or stellate ganglion, the superior sulcus tumors cause characteristic symptoms, like arm or shoulder pain or Horner's syndrome. The management of superior sulcus tumors has dramatically evolved over the past 50 years. Originally deemed universally fatal, in 1956, Shaw and Paulson introduced a new treatment paradigm with combined radiotherapy and surgery ensuring 5-year survival of approximately 30%. During the 1990s, following the need to improve systemic as well as local control, a trimodality approach including induction concurrent chemoradiotherapy followed by surgical resection was introduced, reaching 5-year survival rates up to 44% and becoming the standard of care. Many efforts have been persecuted, also, to obtain higher complete resection rates using appropriate surgical approaches and involving multidisciplinary team including spine surgeon or vascular surgeon. Other potential treatment options are under consideration like prophylactic cranial irradiation or the addition of other chemotherapy agents or biologic agents to the trimodality approach.

  3. In Situ Growth of Core-Sheath Heterostructural SiC Nanowire Arrays on Carbon Fibers and Enhanced Electromagnetic Wave Absorption Performance.

    Science.gov (United States)

    Yan, Liwen; Hong, Changqing; Sun, Boqian; Zhao, Guangdong; Cheng, Yehong; Dong, Shun; Zhang, Dongyang; Zhang, Xinghong

    2017-02-22

    Large-scale core-sheath heterostructural SiC nanowires were facilely grown on the surface of carbon fibers using a one-step chemical vapor infiltration process. The as-synthesized SiC nanowires consist of single crystalline SiC cores with a diameter of ∼30 nm and polycrystalline SiC sheaths with an average thickness of ∼60 nm. The formation mechanisms of core-sheath heterostructural SiC nanowires (SiCnws) were discussed in detail. The SiCnws-CF shows strong electromagnetic (EM) wave absorption performance with a maximum reflection loss value of -45.98 dB at 4.4 GHz. Moreover, being coated with conductive polymer polypyrrole (PPy) by a simple chemical polymerization method, the SiCnws-CF/PPy nanocomposites exhibited superior EM absorption abilities with maximum RL value of -50.19 dB at 14.2 GHz and the effective bandwidth of 6.2 GHz. The SiCnws-CF/PPy nanocomposites in this study are very promising as absorber materials with strong electromagnetic wave absorption performance.

  4. PERSISTENT LEFT SUPERIOR VENACAVA

    Directory of Open Access Journals (Sweden)

    Devinder Singh

    2014-05-01

    Full Text Available A Persistent Left Superior Venacava (PLSVC is the most common variation of the thoracic venous system and rare congenital vascular anomaly and is prevalent in 0.3% of the population. It may be associated with other cardiovascular abnormalities including atrial septal defect, bicuspid aortic valve, coarctation of aorta, coronary sinus ostial atresia, and cor triatriatum. Incidental rotation of a dilated coronary sinus on echocardiography should raise the suspicion of PLSVC. The diagnosis should be confirmed by saline contrast echocardiography. Condition is usually asymptomatic. Here we present a rare case of persistent left superior vena cava presented in OPD with dyspnoea & palpitations.

  5. Active Oxidation of SiC

    Science.gov (United States)

    Jacobson, Nathan S.; Myers,Dwight L.; Harder, Bryan J.

    2011-01-01

    The high temperature oxidation of silicon carbide occurs in either a passive or active mode, depending on temperature and oxygen potential. Passive oxidation forms a protective oxide film which limits attack of the SiC:SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g.) Active oxidation forms a volatile oxide and leads to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g). The transition points and rates of active oxidation are a major issue. Previous studies are reviewed and the leading theories of passive/active transitions summarized. Comparisons are made to the active/passive transitions in pure Si, which are relatively well-understood. Critical questions remain about the difference between the active-to-passive transition and passive-to-active transition. For Si, Wagner [2] points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. This suggests a significant oxygen potential difference between these two transitions and our experiments confirm this. For Si, the initial stages of active oxidation are characterized by the formation of SiO(g) and further oxidation to SiO2(s) as micron-sized rods, with a distinctive morphology. SiC shows significant differences. The active-to-passive and the passive-to-active transitions are close. The SiO2 rods only appear as the passive film breaks down. These differences are explained in terms of the reactions at the SiC/SiO2 interface. In order to understand the breakdown of the passive film, pre-oxidation experiments are conducted. These involve forming dense protective scales of 0.5, 1, and 2 microns and then subjecting the samples with these scales to a known active oxidation environment. Microstructural studies show that SiC/SiO2 interfacial reactions lead to a breakdown of the scale with a distinct morphology.

  6. Irradiation damage of SiC semiconductor device (I)

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Yeon; Kim, Weon Ju

    2000-09-01

    This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10{sup 16} N{sup +} ions/cm{sup 2} and 3.6 x 10{sup 17} e/cm{sup 2} and 1.08 x 10{sup 18} e/cm{sup 2} , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix.

  7. The effect of the substrate temperature and the acceleration potential drop on the structural and physical properties of SiC thin films deposed by TVA method

    Science.gov (United States)

    Ciupina, Victor; Lungu, Cristian P.; Vladoiu, Rodica; Prodan, Gabriel C.; Antohe, Stefan; Porosnicu, Corneliu; Stanescu, Iuliana; Jepu, Ionut; Iftimie, Sorina; Prodan, Madalina; Mandes, Aurelia; Dinca, Virginia; Vasile, Eugeniu; Zarovski, Valeriu; Nicolescu, Virginia

    2014-08-01

    Crystalline Si-C thin films were prepared at substrate temperature between 200°C and 1000°C using Thermionic Vacuum Arc (TVA) method. To increase the acceleration potential drop a negative bias voltage up to -1000V was applied on the substrate. The 200nm thickness carbon thin films was deposed on glass and Si substrate and then 200-500 nm thickness Si-C layer on carbon thin films was deposed. Transmission Electron Microscopy (TEM), High Resolution Transmission Electron Microscopy (HRTEM), X-Ray Photoelectron Spectroscopy (XPS), and electrical conductivity measurement technique characterized the structure and physical characteristics of as-prepared SiC coating. At a constant acceleration potential drop, the electrical conductivity of the Si-C films deposed on C, increase with increasing of substrate temperature. On the other part, significant increases in the acceleration potential drop at constant substrate temperature lead to a variation of the crystallinity and electrical conductivity of the SiC coatings XPS analysis was performed using a Quantera SXM equipment, with monochromatic AlKα radiation at 1486.6eV. Electrical conductivity of the Si-C coating on carbon at different temperatures was measured comparing the potential drop on the sample with the potential drop on a series standard resistance in constant mode.

  8. Compatibility of SiC and SiC Composites with Molten Lead

    Energy Technology Data Exchange (ETDEWEB)

    H Tunison

    2006-03-07

    The choice of structural material candidates to contain Lead at 1000 C are limited in number. Silicon carbide composites comprise one choice of possible containment materials. Short term screening studies (120 hours) were undertaken to study the behavior of Silicon Carbide, Silicon Nitride, elemental Silicon and various Silicon Carbide fiber composites focusing mainly on melt infiltrated composites. Isothermal experiments at 1000 C utilized graphite fixtures to contain the Lead and material specimens under a low oxygen partial pressure environment. The corrosion weight loss values (grams/cm{sup 2} Hr) obtained for each of the pure materials showed SiC (monolithic CVD or Hexoloy) to have the best materials compatibility with Lead at this temperature. Increased weight loss values were observed for pure Silicon Nitride and elemental Silicon. For the SiC fiber composite samples those prepared using a SiC matrix material performed better than Si{sub 3}N{sub 4} as a matrix material. Composites prepared using a silicon melt infiltration process showed larger corrosion weight loss values due to the solubility of silicon in lead at these temperatures. When excess silicon was removed from these composite samples the corrosion performance for these material improved. These screening studies were used to guide future long term exposure (both isothermal and non-isothermal) experiments and Silicon Carbide composite fabrication work.

  9. The anatomical characteristics and clinical application of the lateral superior genicular artery perforator iliotibial band flap%膝上外侧动脉穿支髂胫束皮瓣的解剖特点与临床应用

    Institute of Scientific and Technical Information of China (English)

    高建明; 徐达传; 储旭东; 郭峰; 卢绪; 骆宇春; 刘云鹏

    2010-01-01

    Objective To discuss anatomical characteristics and clinical results of the lateral superior genicular artery perforator iliotibial band flap. Methods From September 1999 to July 2009, the origin,course, branches and distribution of the lateral superior genicular artery and blood supply of iliotibial band were observed on 40 sides adult lower limbs perfused with red latax. Five perforator iliotibial band and 4 perforator iliotibial band flaps of 9 cases were treated with anastomosis of lateral superior genicular artery perforating rami. Results The lateral superior genicular artery of 35 cases (80%) originates from the popliteal artery. Its originated external diameter was (1.8 ± 0.4) mm. It divides into ascending branch and descending branch, and they gives off septofascio-cutaneous perforator, or anatomoses the lateral uppermost genicular artery in the vastus lateralis muscle, and then formes the musculocutaneous perforator of iliotibial band. The originated external diameter of the larger perforator of iliotibial bands was ( 1.0 ± 0.2) mm and they provides for the skin and iliotibial band of lateral superior genicular area. Nine cases, including 5 cases of simple Achilles tendon defects, two cases of achilles tendon defects with skin defects, and 2 cases of lower extremity and foot soft tissue defects were treated with transplantation of the vascularized iliotibial band (flap) with perforator vascular anastomoses. All cases were followed up 6 - 92 months. The results showed significant improvement in "heel test" and Thompson sign in the rerupture of the Achilles tendon occurred. Four perforator iliotibial band flaps survived well. Conclusion The lateral superior genicular artery perforator iliotibial band flap is a practical, simple and new donor in the reconstruction of soft tissue and composite defects.%目的 探讨膝上外侧动脉穿支髂胫束皮瓣的解剖学基础与临床应用效果.方法 自1999年9月至2009年7月,在40侧经动脉灌注红

  10. Challenges in Switching SiC MOSFET without Ringing

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig

    2014-01-01

    Switching SiC MOSFET without ringing in high frequency applications is important for meeting the EMI (ElectroMagnetic Interference) standard. Achieving a clean switching waveform of SiC MOSFET without additional components is becoming a challenge. In this paper, the switching oscillation mechanism...... is analysed in detail. According to the analysis, the optimal circuit design to minimize the parasitic parametric is introduced for a clean switching waveform. Experiment results show the clean switching waveform of SiC MOSFET. Guidelines are established for circuit design....

  11. Bubble formation in oxide scales on SiC

    Science.gov (United States)

    Mieskowski, D. M.; Mitchell, T. E.; Heuer, A. H.

    1984-01-01

    The oxidation of alpha-SiC single crystals and sintered alphaand beta-SiC polycrystals has been investigated at elevated temperatures. Bubble formation is commonly observed in oxide scales on polycrystalline SiC, but is rarely found on single-crystal scales; bubbles result from the preferential oxidation of C inclusions, which are abundant in SiC polycrystals. The absence of bubbles on single crystals, in fact, implies that diffusion of the gaseous species formed on oxidation, CO (or possibly SiO), controls the rate of oxidation of SiC.

  12. SiC MOSFETs based split output half bridge inverter

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig; Beczkowski, Szymon

    2014-01-01

    Body diode of SiC MOSFETs has a relatively high forward voltage drop and still experiences reverse recovery phenomenon. Half bridge with split output aims to decouple both the body diode and junction capacitance of SiC MOSFETs, therefore achieving a reduced switching loss in a bridge configuration....... This paper makes the current commutation mechanism and efficiency analysis of half bridge with split output based on SiC MOSFETs. Current commutation process analysis is illustrated together with LTspice simulation and afterwards, verified by the experimental results of a double pulse test circuit with split...

  13. Bubble formation in oxide scales on SiC

    Science.gov (United States)

    Mieskowski, D. M.; Mitchell, T. E.; Heuer, A. H.

    1984-01-01

    The oxidation of alpha-SiC single crystals and sintered alphaand beta-SiC polycrystals has been investigated at elevated temperatures. Bubble formation is commonly observed in oxide scales on polycrystalline SiC, but is rarely found on single-crystal scales; bubbles result from the preferential oxidation of C inclusions, which are abundant in SiC polycrystals. The absence of bubbles on single crystals, in fact, implies that diffusion of the gaseous species formed on oxidation, CO (or possibly SiO), controls the rate of oxidation of SiC.

  14. Biomorphous SiC ceramics prepared from cork oak as precursor

    Science.gov (United States)

    Yukhymchuk, V. O.; Kiselov, V. S.; Valakh, M. Ya.; Tryus, M. P.; Skoryk, M. A.; Rozhin, A. G.; Kulinich, S. A.; Belyaev, A. E.

    2016-04-01

    Porous ceramic materials of SiC were synthesized from carbon matrices obtained via pyrolysis of natural cork as precursor. We propose a method for the fabrication of complex-shaped porous ceramic hardware consisting of separate parts prepared from natural cork. It is demonstrated that the thickness of the carbon-matrix walls can be increased through their impregnation with Bakelite phenolic glue solution followed by pyrolysis. This decreases the material's porosity and can be used as a way to modify its mechanical and thermal characteristics. Both the carbon matrices (resulted from the pyrolysis step) and the resultant SiC ceramics are shown to be pseudomorphous to the structure of initial cork. Depending on the synthesis temperature, 3C-SiC, 6H-SiC, or a mixture of these polytypes, could be obtained. By varying the mass ratio of initial carbon and silicon components, stoichiometric SiC or SiC:C:Si, SiC:C, and SiC:Si ceramics could be produced. The structure, as well as chemical and phase composition of the prepared materials were studied by means of Raman spectroscopy and scanning electron microscopy.

  15. Characteristics of the Temporal and Spatial Distribution of China’s Superiority Olympic Events%我国奥运优势项目时空演变发展特征研究

    Institute of Scientific and Technical Information of China (English)

    张晓林; 任德利; 袁锋

    2015-01-01

    In the present project,we looked at the number of gold medals that China has won at the Olympic Sum-mer and Winter Games,the places of origin of the gold medalists,and the characteristics of the temporal and spatial distribution of the gold-winning sports events. Temporally,we found a wave-like upward pattern in the number of gold medals,and that superiority events are mainly distributed among six events,i. e. ,weightlifting,gymnastics div-ing,shooting,table tennis and badminton, in four major subgroups of events:the speed-and-power-demanding, the difficulty-and-beauty-demanding,the accuracy-demanding,and the net events,the first subgroup being based on fit-ness and the latter three on skill. The superiority Olympic events have contributed 74. 6%of all gold medals won by China at the Olympic Games,with an uneven regional distribution,showing a difference in quality longitudinally and one in quantity latitudinally. These events are distributed over three regions,which are rated as strong,fairly strong and weak respectively. For the comprehensive upgrade of China’s competitiveness in the Olympic events,we suggest deepening the priority development strategy,seizing the opportunity for national coordinated regional development to promote coordinated regional development of competitive sports,working for an even distribution and development of the superiority Olympic events,and broadening development paths.%利用文献资料法、数理统计法与比较研究法等,对我国所参加的历届夏季奥运会与冬季奥运会所获金牌数量、金牌运动员籍贯以及金牌项目的时空分布特征进行研究。结果表明:我国奥运会金牌总数在时间分布上呈现波浪式前进态势;我国奥运优势项目主要分布在体能主导类的快速力量性,技能主导类的表现难美性、表现准确性、隔网对抗性四大亚项群的举重、体操与跳水、射击、乒乓球与羽毛球六个项目;奥运优势

  16. SiC Avalanche Photodiodes and Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Aymont Technology, Inc. (Aymont) will demonstrate the feasibility of SiC p-i-n avalanche photodiodes (APD) arrays. Aymont will demonstrate 4 x 4 arrays of 2 mm2 APDs...

  17. Microwave joining of SiC ceramics and composites

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, I.; Silberglitt, R.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States); Katz, J.D. [Los Alamos National Lab., NM (United States)

    1997-04-01

    Potential applications of SiC include components for advanced turbine engines, tube assemblies for radiant burners and petrochemical processing and heat exchangers for high efficiency electric power generation systems. Reliable methods for joining SiC are required in order to cost-effectively fabricate components for these applications from commercially available shapes and sizes. This manuscript reports the results of microwave joining experiments performed using two different types of SiC materials. The first were on reaction bonded SiC, and produced joints with fracture toughness equal to or greater than that of the base material over an extended range of joining temperatures. The second were on continuous fiber-reinforced SiC/SiC composite materials, which were successfully joined with a commercial active brazing alloy, as well as by using a polymer precursor.

  18. An Extension of SIC Predictions to the Wiener Coactive Model.

    Science.gov (United States)

    Houpt, Joseph W; Townsend, James T

    2011-06-01

    The survivor interaction contrasts (SIC) is a powerful measure for distinguishing among candidate models of human information processing. One class of models to which SIC analysis can apply are the coactive, or channel summation, models of human information processing. In general, parametric forms of coactive models assume that responses are made based on the first passage time across a fixed threshold of a sum of stochastic processes. Previous work has shown that that the SIC for a coactive model based on the sum of Poisson processes has a distinctive down-up-down form, with an early negative region that is smaller than the later positive region. In this note, we demonstrate that a coactive process based on the sum of two Wiener processes has the same SIC form.

  19. Synthesis of micro-sized interconnected Si-C composites

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Donghai; Yi, Ran; Dai, Fang

    2016-02-23

    Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

  20. Avalanche robustness of SiC Schottky diode

    OpenAIRE

    Dchar, Ilyas; Buttay, Cyril; Morel, Hervé

    2016-01-01

    International audience; Reliability is one of the key issues for the application of Silicon carbide (SiC) diode in high power conversion systems. For instance, in high voltage direct current (HVDC) converters, the devices can be submitted to high voltage transients which yield to avalanche. This paper presents the experimental evaluation of SiC diodes submitted to avalanche, and shows that the energy dissipation in the device can increase quickly and will not be uniformly distributed across t...

  1. Electrical Characterization of Defects in SiC Schottky Barriers

    Science.gov (United States)

    Schnabel, C. M.; Tabib-Azar, M.; Raffaelle, R. P.; Su, H. B.; Dudley, M.; Neudeck, P. G.; Bailey, S.

    2005-01-01

    We have been investigating the effect of screw dislocation and other structural defects on the electrical properties of SiC. SiC is a wide-bandgap semiconductor that is currently received much attention due to its favorable high temperature behavior and high electric field breakdown strength. Unfortunately, the current state-of-the-art crystal growth and device processing methods produce material with high defect densities, resulting in a limited commercial viability

  2. Preparation of SiC Fiber Reinforced Nickel Matrix Composite

    Institute of Scientific and Technical Information of China (English)

    Lu Zhang; Nanlin Shi; Jun Gong; Chao Sunt

    2012-01-01

    A method of preparing continuous(Al+Al2O3)-coated SiC fiber reinforced nickel matrix composite was presented,in which the diffusion between SiC fiber and nickel matrix could be prevented.Magnetron sputtering is used to deposit Ni coating on the surface of the(Al+Al2O3)-coated SiC fiber in preparation of the precursor wires.It is shown that the deposited Ni coating combines well with the(Al+Al2O3) coating and has little negative effect on the tensile strength of(Al+Al2O3)-coated SiC fiber.Solid-state diffusion bonding process is employed to prepare the(Al+Al2O3)-coated SiC fiber reinforced nickel matrix with 37% fibers in volume.The solid-state diffusion bonding process is optimized and the optimum parameters are temperature of 870,pressure of 50 MPa and holding time of 2 h.Under this condition,the precursor wires can diffuse well,composite of full density can be formed and the(Al+Al2O3) coating is effective to restrict the reaction between SiC fiber and nickel matrix.

  3. Scalable in situ growth of SnO{sub 2} nanoparticle chains on SiC ultrathin fibers via a facile sol–gel-flame method

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yingde, E-mail: wyd502@163.com [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha PR 410073 (China); Wang, Bing [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha PR 410073 (China); Lei, Yongpeng, E-mail: lypkd@163.com [College of Basic Education, National University of Defense Technology, Changsha PR 410073 (China); Wu, Nan; Han, Cheng; Gou, Yanzi [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha PR 410073 (China); Fang, Dong [College of Materials Science and Engineering, Wuhan Textile University, Wuhan PR 430074 (China)

    2015-04-30

    Highlights: • SnO{sub 2} nanoparticle chains/SiC fibers were in situ prepared by sol–gel-flame method. • The composite fibers with hierarchical structure formed a flexible mat. • The flexible mats showed superior electrical and optical properties. • Such composite fibers mat can be easily scalable synthesized. - Abstract: SnO{sub 2} nanoparticle chains (SNPCs) were controllably in situ grown on the electrospun SiC ultrathin fibers (SUFs) by a scalable sol–gel-flame method to form a flexible mat. While bulk SnO{sub 2} was obtained by relatively slow pyrolysis in conventional horizontal tube furnace. The effect of process parameters on the microstructure and morphology of SNPCs/SUFs mats was discussed. I–V characteristics of the SNPCs/SUFs mats revealed a nonlinear curve, indicating the formation of Schottky-type junctions. The composite fibers mats also exhibited broad and strong emission bands between 400 and 650 nm. This may be attributed to the existence of a large amount of oxygen vacancies and defects in SNPCs caused by the fast pyrolysis process. Such composite fibers mats may have great potentials in high-temperature gas sensors, light-emitting diodes and lithium-ion storages, etc.

  4. Radiometric flight results from the HyperSpectral Imager for Climate Science (HySICS)

    Science.gov (United States)

    Kopp, Greg; Smith, Paul; Belting, Chris; Castleman, Zach; Drake, Ginger; Espejo, Joey; Heuerman, Karl; Lanzi, James; Stuchlik, David

    2017-04-01

    Long-term monitoring of the Earth-reflected solar spectrum is necessary for discerning and attributing changes in climate. High radiometric accuracy enables such monitoring over decadal timescales with non-overlapping instruments, and high precision enables trend detection on shorter timescales. The HyperSpectral Imager for Climate Science (HySICS) is a visible and near-infrared spatial/spectral imaging spectrometer intended to ultimately achieve ˜ 0.2 % radiometric accuracies of Earth scenes from space, providing an order-of-magnitude improvement over existing space-based imagers. On-orbit calibrations from measurements of spectral solar irradiances acquired by direct views of the Sun enable radiometric calibrations with superior long-term stability than is currently possible with any manmade spaceflight light source or detector. Solar and lunar observations enable in-flight focal-plane array (FPA) flat-fielding and other instrument calibrations. The HySICS has demonstrated this solar cross-calibration technique for future spaceflight instrumentation via two high-altitude balloon flights. The second of these two flights acquired high-radiometric-accuracy measurements of the ground, clouds, the Earth's limb, and the Moon. Those results and the details of the uncertainty analyses of those flight data are described.

  5. Continuous SiC fiber, CVI SiC matrix composites for nuclear applications: Properties and irradiation effects

    Energy Technology Data Exchange (ETDEWEB)

    Katoh, Yutai, E-mail: katohy@ornl.gov [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Ozawa, Kazumi; Shih, Chunghao; Nozawa, Takashi [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Shinavski, Robert J. [Hyper-Therm High Temperature Composites, Inc., Huntington Beach, CA (United States); Hasegawa, Akira [Tohoku University, Sendai, Miyagi-ken (Japan); Snead, Lance L. [Oak Ridge National Laboratory, Oak Ridge, TN (United States)

    2014-05-01

    Silicon carbide (SiC) continuous fiber-reinforced, SiC-matrix composites (SiC/SiC composites) are industrially available materials that are promising for applications in nuclear environments. The SiC/SiC composites consisting of near-stoichiometric SiC fibers, stoichiometric and fully crystalline SiC matrices, and the pyrocarbon (PyC) or multilayered PyC/SiC interphase between the fiber and the matrix are considered particularly resistant to very high radiation environments. This paper provides a summary compilation of the properties of these composites, specifically those with the chemically vapor-infiltrated (CVI) SiC matrices, including newly obtained results. The properties discussed are both in unirradiated condition and after neutron irradiation to intermediate fluence levels (most data are for <∼10 displacement per atom) at 300–1300 °C.

  6. Effect of SiC reinforcement on the deformation and fracture micromechanisms of Al-Li alloys

    Science.gov (United States)

    Poza; Llorca

    1999-11-01

    The effect of SiC reinforcement on the microstructure of a naturally aged 8090 Al alloy as well as on the deformation and fracture micromechanisms was investigated. To this end, the microstructural characteristics (grain and reinforcement morphology, precipitate structure) were determined in the unreinforced alloy and in the composite reinforced with 15 vol.% SiC particles. The materials were tested under monotonic tension and fully reversed cyclic deformation and then carefully analysed through scanning and transmission electron microscopy to find the dominant deformation and failure processes for each material and loading condition. It was found that the dispersion of the SiC particles restrained the formation of elongated grains during extrusion and inhibited the precipitation of Al3Li. As a result, the plastic deformation in the composite was homogeneous, while strain localization in slip bands was observed in the unreinforced alloy specimens tested in tension and in fatigue. The unreinforced alloy failed by transgranular shear along the slip bands during monotonic deformation, whereas fracture was initiated by grain boundary delamination, promoted by the stress concentrations induced by the slip bands, during cyclic deformation. The fracture of the composite was precipitated by the progressive fracture of the SiC reinforcements during monotonic and cyclic deformation.

  7. The impact resistance of SiC and other mechanical properties of SiC and Si3N4

    Science.gov (United States)

    Bradt, R. C.

    1984-01-01

    Studies focused on the impact and mechanical behavior of SiC and Si3N4 at high temperatures are summarized. Instrumented Charpy impact testing is analyzed by a compliance method and related to strength; slow crack growth is related to processing, and creep is discussed. The transient nature of flaw populations during oxidation under load is emphasized for both SiC and Si3N4.

  8. Contabilidad Financiera Superior

    OpenAIRE

    Ipiñazar Petralanda, Izaskun

    2013-01-01

    Duración (en horas): De 31 a 40 horas. Destinatario: Estudiante y Docente A través de este material se presentan las pautas necesarias para implementar un aprendizaje basado en problemas en la asignatura de Contabilidad Financiera Superior dentro de los temas “Constitución de S.A. y S.R.L.” (Tema 2), “Ampliaciones de Capital” (Tema 3) y “Reducciones de Capital” (Tema 4). En primer lugar se presentan las guías generales de la asignatura, y a continuación, las diferentes activida...

  9. Contabilidad Financiera Superior

    OpenAIRE

    Ipiñazar Petralanda, Izaskun

    2013-01-01

    Duración (en horas): De 31 a 40 horas. Destinatario: Estudiante y Docente A través de este material se presentan las pautas necesarias para implementar un aprendizaje basado en problemas en la asignatura de Contabilidad Financiera Superior dentro de los temas “Constitución de S.A. y S.R.L.” (Tema 2), “Ampliaciones de Capital” (Tema 3) y “Reducciones de Capital” (Tema 4). En primer lugar se presentan las guías generales de la asignatura, y a continuación, las diferentes activida...

  10. /SiC Composite to Titanium Alloy

    Science.gov (United States)

    Hernandez, X.; Jiménez, C.; Mergia, K.; Yialouris, P.; Messoloras, S.; Liedtke, V.; Wilhelmi, C.; Barcena, J.

    2014-08-01

    In view of aerospace applications, an innovative structure for joining a Ti alloy to carbon fiber reinforced silicon carbide has been developed. This is based on the perforation of the CMC material, and this procedure results in six-fold increase of the shear strength of the joint compared to the unprocessed CMC. The joint is manufactured using the active brazing technique and TiCuAg as filler metal. Sound joints without defects are produced and excellent wetting of both the composite ceramic and the metal is observed. The mechanical shear tests show that failure occurs always within the ceramic material and not at the joint. At the CMC/filler, Ti from the filler metal interacts with the SiC matrix to form carbides and silicides. In the middle of the filler region depletion of Ti and formation of Ag and Cu rich regions are observed. At the filler/Ti alloy interface, a layered structure of the filler and Ti alloy metallic elements is formed. For the perforation to have a significant effect on the improvement of the shear strength of the joint appropriate geometry is required.

  11. Statistics of superior records

    Science.gov (United States)

    Ben-Naim, E.; Krapivsky, P. L.

    2013-08-01

    We study statistics of records in a sequence of random variables. These identical and independently distributed variables are drawn from the parent distribution ρ. The running record equals the maximum of all elements in the sequence up to a given point. We define a superior sequence as one where all running records are above the average record expected for the parent distribution ρ. We find that the fraction of superior sequences SN decays algebraically with sequence length N, SN˜N-β in the limit N→∞. Interestingly, the decay exponent β is nontrivial, being the root of an integral equation. For example, when ρ is a uniform distribution with compact support, we find β=0.450265. In general, the tail of the parent distribution governs the exponent β. We also consider the dual problem of inferior sequences, where all records are below average, and find that the fraction of inferior sequences IN decays algebraically, albeit with a different decay exponent, IN˜N-α. We use the above statistical measures to analyze earthquake data.

  12. Frenillo labial superior doble

    Directory of Open Access Journals (Sweden)

    Carlos Albornoz López del Castillo

    Full Text Available El frenillo labial superior doble no sindrómico es una anomalía del desarrollo que no hemos encontrado reportada en la revisión bibliográfica realizada. Se presenta una niña de 11 años de edad que fue remitida al servicio de Cirugía Maxilofacial del Hospital "Eduardo Agramonte Piña", de Camagüey, por presentar un frenillo labial superior doble de baja inserción. Se describen los síntomas clínicos asociados a esta anomalía y el tratamiento quirúrgico utilizado para su solución: una frenectomía y plastia sobre la banda muscular frénica anormal que provocaba exceso de tejido en la mucosa labial. Consideramos muy interesante la descripción de este caso, por no haber encontrado reporte similar en la literatura revisada.

  13. Synthesis and Characterization of SiC Reinforced HE-30 Al Alloy Particulate MMCs

    Directory of Open Access Journals (Sweden)

    Pradyumna Phutane

    2013-06-01

    Full Text Available Metal matrix composites have evoked a keen interest in recent times for potential applications in many areas, especially aerospace & automotive industries owing to their superior strength to weight ratio. A particle reinforced metal matrix composite consists of uniform distribution of strengthening ceramic particles embedded within metal matrix. Manufacturing of aluminum alloy based composites via stir casting is one of the prominent and economical routes for processing of metal matrix composites. An attempt has been made to synthesize HE-30 Al Alloy-SiC particulate metal matrix composite by liquid metallurgy route. Micro-structural characterization revealed fairly uniform distribution of SiC particles in the matrix. The prepared composite was subjected to the mechanical testing as per ASTM standards. The mechanical tests revealed an increase in hardness and tensile strength of the developed composites over the base metal alloy.

  14. Structure of MMCs with SiC Particles after Gas-tungsten Arc Welding

    Directory of Open Access Journals (Sweden)

    Przełożyńska E.

    2015-12-01

    Full Text Available The gas-tungsten arc (GTA welding behaviors of a magnesium matrix composite reinforced with SiC particles were examined in terms of microstructure characteristics and process efficiencies. This study focused on the effects of the GTAW process parameters (like welding current in the range of 100/200 A on the size of the fusion zone (FZ. The analyses revealed the strong influence of the GTA welding process on the width and depth of the fusion zone and also on the refinement of the microstructure in the fusion zone. Additionally, the results of dendrite arm size (DAS measurements were presented.

  15. Comparative Study of Monolayer and Bilayer Epitaxial Graphene Field-Effect Transistors on SiC Substrates

    Institute of Scientific and Technical Information of China (English)

    Ze-Zhao He; Ke-Wu Yang; Cui Yu; Qing-Bin Liu; Jing-Jing Wang; Xu-Bo Song; Ting-Ting Han

    2016-01-01

    Monolayer and bilayer graphenes have generated tremendous excitement as the potentially useful electronic materials due to their unique features.We report on monolayer and bilayer epitaxial graphene field-effect transistors (GFETs) fabricated on SiC substrates.Compared with monolayer GFETs,the bilayer GFETs exhibit a significant improvement in dc characteristics,including increasing current density IDS,improved transconductance gm,reduced sheet resistance Ron,and current saturation.The improved electrical properties and tunable bandgap in the bilayer graphene lead to the excellent dc performance of the bilayer GFETs.Furthermore,the improved dc characteristics enhance a better rf performance for bilayer graphene devices,demonstrating that the quasifree-standing bilayer graphene on SiC substrates has a great application potential for the future graphene-based electronics.

  16. SiC protective coating for photovoltaic retinal prosthesis

    Science.gov (United States)

    Lei, Xin; Kane, Sheryl; Cogan, Stuart; Lorach, Henri; Galambos, Ludwig; Huie, Philip; Mathieson, Keith; Kamins, Theodore; Harris, James; Palanker, Daniel

    2016-08-01

    Objective. To evaluate plasma-enhanced, chemically vapor deposited (PECVD) amorphous silicon carbide (α-SiC:H) as a protective coating for retinal prostheses and other implantable devices, and to study their failure mechanisms in vivo. Approach. Retinal prostheses were implanted in rats sub-retinally for up to 1 year. Degradation of implants was characterized by optical and scanning electron microscopy. Dissolution rates of SiC, SiN x and thermal SiO2 were measured in accelerated soaking tests in saline at 87 °C. Defects in SiC films were revealed and analyzed by selectively removing the materials underneath those defects. Main results. At 87 °C SiN x dissolved at 18.3 ± 0.3 nm d-1, while SiO2 grown at high temperature (1000 °C) dissolved at 0.104 ± 0.008 nm d-1. SiC films demonstrated the best stability, with no quantifiable change after 112 d. Defects in thin SiC films appeared primarily over complicated topography and rough surfaces. Significance. SiC coatings demonstrating no erosion in accelerated aging test for 112 d at 87 °C, equivalent to about 10 years in vivo, can offer effective protection of the implants. Photovoltaic retinal prostheses with PECVD SiC coatings exhibited effective protection from erosion during the 4 month follow-up in vivo. The optimal thickness of SiC layers is about 560 nm, as defined by anti-reflective properties and by sufficient coverage to eliminate defects.

  17. Thermal shock tests of $beta;-sic pellets prepared from laser synthesized nanoscale sic powders

    Science.gov (United States)

    Donato, A.; Borsella, E.; Botti, S.; Martelli, S.; Nannetti, C. A.; Mancini, M. R.; Morjan, I.

    1996-10-01

    Nanoscale SiC powders, produced by laser synthesis from gaseous precursors, have been successfully used to prepare sintered pellets. All the sintered samples showed the low temperature β-SiC structures and presented an enhanced thermal conductivity (> 20%) with respect to materials prepared from commercial powders. Samples hardness and toughness, comparable with commercial products, confirmed the good samples quality. The thermal shock tests have been performed by irradiating the pellets with a Nd-YAG pulsed laser (pulse duration and energy: 0.25 μs and 0.18 J or 0.4 ms and 0.65 J). The laser fluence (power density) was increased by reducing the spot size, up to the appearance of a visible surface damage. The threshold values for the structural damage were quantified using a heat flux parameter φ abs√ tp. The measured threshold value rose from ca. 20 MW/m 2 √s for the best materials prepared from commercial SiC powders to ca. 24 MW/m 2√s for the newly developed β-SiC.

  18. Fabrication, Characterization and Thermo-physical Prop erty Evaluation of SiC Nanofluids for Heat Transfer Applications

    Institute of Scientific and Technical Information of China (English)

    Nader Nikkam; Mohsin Saleemi; Ehsan B Haghighi; Morteza Ghanbarpour; Rahmatollah Khodabandeh; Mamoun Muhammed; Bjorn Palm; Muhammet S Toprak

    2014-01-01

    Nanofluids (NFs) are nanotechnology-based colloidal suspensions fabricated by suspending nanoparticles (NPs) in a base liquid. These fluids have shown potential to improve the heat transfer prop-erties of conventional heat transfer fluids. In this study we report in detail on fabrication, characterization and thermo-physical property evaluation of SiC NFs, prepared using SiC NPs with different crystal structures, for heat transfer applications. For this purpose, a series of SiC NFs containing SiC NPs with different crys-tal structure (α-SiC and β-SiC) were fabricated in a water (W)/ethylene glycol (EG) mixture (50/50 wt%ratio). Physicochemical properties of NPs/NFs were characterized by using various techniques, such as pow-der X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fouriertransform infrared spectroscopy (FTIR), dynamic light scattering (DLS) and Zeta potential analysis. Thermo-physical properties including thermal conductivity (TC) and viscosity for NFs containing SiC particles (α- and β- phase) weremeasured. The results show among all suspensions NFs fabricated with α-SiC particles have more favorable thermo-physical properties compared to the NFs fabricated with β-SiC.The observed dif-ference is attributed to combination of several factors, including crystal structure (β- vs. α-), sample purity, and residual chemicals exhibited on SiCNFs. A TC enhancement of ∼20% while 14% increased viscosity were obtained for NFs containing 9 wt%of particular type ofα-SiC NPs indicating promising capability of this kind of NFs for further heat transfer characteristics investigation.

  19. Principal component analysis for major economic characteristics of Carya illinoensis and selection of superior cultivars%美国山核桃主要经济性状的主成分分析及良种选择

    Institute of Scientific and Technical Information of China (English)

    杨建华; 李淑芳; 范志远; 习学良; 邹伟烈; 刘娇; 潘莉

    2011-01-01

    Based on a specimen correlation matrix, eight major economic characteristics, including fruit shape coefficient, average nut weight, shell thickness of the nut, kernel ratio, kernel weight, kernel fat content, protein content, and fruit yield per square meter of projected tree crown area, for 12 cultivars of Carya illinoensis were determined using a principal component analysis. Results according to more than 83.99% of the cumulative variance, showed that the three principal components and their functional equations were: kernel ratio, average nut weight, kernel fat content. Key principal component values of various cultivars were: kernel ratio(43.329%). Superior cultivars were determined as average nut weight with the results being similar to a practical phenotype. [Ch, 1 fig. 4 tab. 6 ref.]%应用主成分分析法,由样本相关矩阵出发,时12个美国山核桃Carya illinoensis样本的8个主要经济性状[坚果果形系数、平均坚果质量、坚果壳厚、坚果出仁率、核仁质量、核仁脂肪、蛋白质、单位面积(m2)树冠投影面积产果量]进行分析,以性状的累积方差贡献率达到83.99%为标准,确定了3个反映美国山核桃主要经济性状的主成分及其主成分的函数式,并通过计算样本的重要主成分值,对供试样本进行比较,进而选择综合经济性状优良的样本,其结果与品种的实际表现相符.表明用主成分分析法可以对美国山核桃主要经济性状进行综合评选.

  20. X-ray fluorescence microtomography of SiC shells

    Energy Technology Data Exchange (ETDEWEB)

    Ice, G.E.; Chung, J.S. [Oak Ridge National Lab., TN (United States); Nagedolfeizi, M. [Univ. of Tennessee, Knoxville, TN (United States)

    1997-04-01

    TRISCO coated fuel particles contain a small kernel of nuclear fuel encapsulated by alternating layers of C and SiC. The TRISCO coated fuel particle is used in an advanced fuel designed for passive containment of the radioactive isotopes. The SiC layer provides the primary barrier for radioactive elements in the kernel. The effectiveness of this barrier layer under adverse conditions is critical to containment. The authors have begun the study of SiC shells from TRISCO fuel. They are using the fluorescent microprobe beamline 10.3.1. The shells under evaluation include some which have been cycled through a simulated core melt-down. The C buffer layers and nuclear kernels of the coated fuel have been removed by laser drilling through the SiC and then exposing the particle to acid. Elements of interest include Ru, Sb, Cs, Ce and Eu. The radial distribution of these elements in the SiC shells can be attributed to diffusion of elements in the kernel during the melt-down. Other elements in the shells originate during the fabrication of the TRISCO particles.

  1. Hysteresis in the Active Oxidation of SiC

    Science.gov (United States)

    Jacobson, Nathan S.; Harder, Bryan J.; Myers, Dwight L.

    2011-01-01

    Si and SiC show both passive oxidation behavior where a protective film of SiO2 forms and active oxidation behavior where a volatile suboxide SiO(g) forms. The active-to-passive and passive-to-active oxidation transitions are explored for both Si and SiC. Si shows a dramatic difference between the P(O2) for the two transitions of 10-4 bar. The active-to-passive transition is controlled by the condition for SiO2/Si equilibrium and the passive-to-active transition is controlled by the decomposition of SiO2. In the case of SiC, the P(O2) for these transitions are much closer. The active-to-passive transition appears to be controlled by the condition for SiO2/SiC equilibrium. The passive-to-active transition appears to be controlled by the interfacial reaction of SiC and SiO2 and subsequent generation of gases at the interface which leads to scale breakdown.

  2. TRISO coated fuel particles with enhanced SiC properties

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Honorato, E.; Tan, J.; Meadows, P.J. [Materials Science Centre, School of Materials, University of Manchester, Grosvenor St., Manchester M1 7HS (United Kingdom); Marsh, G. [Nexia Solutions Ltd., Spingfields, PR4 0XJ (United Kingdom); Xiao, P., E-mail: ping.xiao@manchester.ac.u [Materials Science Centre, School of Materials, University of Manchester, Grosvenor St., Manchester M1 7HS (United Kingdom)

    2009-07-15

    The silicon carbide (SiC) layer used for the formation of TRISO coated fuel particles is normally produced at 1500-1650 deg. C via fluidized bed chemical vapor deposition from methyltrichlorosilane in a hydrogen environment. In this work, we show the deposition of SiC coatings with uniform grain size throughout the coating thickness, as opposed to standard coatings which have larger grain sizes in the outer sections of the coating. Furthermore, the use of argon as the fluidizing gas and propylene as a carbon precursor, in addition to hydrogen and methyltrichlorosilane, allowed the deposition of stoichiometric SiC coatings with refined microstructure at 1400 and 1300 deg. C. The deposition of SiC at lower deposition temperatures was also advantageous since the reduced heat treatment was not detrimental to the properties of the inner pyrolytic carbon which generally occurs when SiC is deposited at 1500 deg. C. The use of a chemical vapor deposition coater with four spouts allowed the deposition of uniform and spherical coatings.

  3. Evaluation of Fracture Stress for the SiC Layer of TRISO-Coated Fuel Particles by A Modified Crush Testing

    Energy Technology Data Exchange (ETDEWEB)

    Byun, Thak Sang [ORNL; Kim, Jin Weon [ORNL; Miller, James Henry [ORNL; Snead, Lance Lewis [ORNL; Hunn, John D [ORNL

    2010-01-01

    Fracture stress data for the chemical vapor deposition (CVD) SiC coatings of tri-isotropic (TRISO) carbon/silicon carbide coated fuel particles were obtained using a newly developed testing and evaluation method, and their relationship with microstructure investigated. A crush testing technique using a blanket foil at load-transferring contact has been developed for hemispherical shell SiC specimens based on finite element (FE) analysis results. Mean fracture stress varied with test material in the range of 330 650 MPa, and was connected to the combined characteristics of inner surface roughness and porosity.

  4. Electronic-structure origin of the anisotropic thermopower of nanolaminated Ti3SiC2 determined by polarized x-ray spectroscopy and Seebeck measurements

    DEFF Research Database (Denmark)

    Magnuson, Martin; Mattesini, Maurizio; Van Nong, Ngo

    2012-01-01

    Nanolaminated materials exhibit characteristic magnetic, mechanical, and thermoelectric properties, with large contemporary scientific and technological interest. Here we report on the anisotropic Seebeck coefficient in nanolaminated Ti3SiC2 single-crystal thin films and trace the origin to aniso...

  5. La或N掺杂SiC纳米线的制备、场发射性能及第一性原理计算%Preparation, Field Emission Characteristics and First-Principles Calculations of La-Doped or N-Doped SiC Nanowires

    Institute of Scientific and Technical Information of China (English)

    李镇江; 马凤麟; 张猛; 宋冠英; 孟阿兰

    2015-01-01

    La-and N-doped SiC nanowires were prepared using a vapor-phase doping method and chemical vapor deposition method, respectively. The morphologies, element analysis, and crystal structures of the products were characterized by field emission scanning electron microscope (FE-SEM), transmission electron microscope (TEM), selected area electron diffraction (SAED), high-resolution transmission electron microscope (HRTEM), X-ray energy dispersive spectrum (EDS), and X-ray diffraction (XRD). The field emission properties of the nanowires doped with different elements were tested by field emission measurements, and the results show that the turn on field (Eto) and threshold field (Ethr) of La-doped SiC nanowires are 1.2 and 5.2 V∙μm-1, and those of N-doped SiC nanowires are 0.9 and 4.0 V∙μm-1, respectively, these values are clearly lower than those of 2.3 and 6.6 V∙μm-1 for undoped SiC nanowires. In addition, the density of states (DOS) and band structures of undoped, N-doped, and La-doped, SiC nanowires were also calculated using Castep of material studio on the basis of the first-principles. The results of the theoretical calculations suggest that the narrower gap may be attributed to the impurity energy level (La 5d or N 2p) generated near the Fermi level. Because of the narrower gap, electrons transfer from the valence band maximum (VBM) to conduction band minimum (CBM) need less energy, and this enhances the field emission property.%采用化学气相沉积法和气相掺杂法,分别制备了La或N掺杂的SiC纳米线.利用场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)、选区电子衍射(SAED)、高分辨透射电子显微镜(HRTEM)、X射线能量色散谱(EDS)分析和X射线衍射(XRD)等测试手段对两种产物的微观形貌、元素组成和物相结构进行了系统表征.以合成产物作为阴极,对其场发射性能进行测试,结果表明:SiC纳米线的开启电场值和阈值电场值由未掺杂的2.3

  6. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Thermal and Mechanical Properties

    Energy Technology Data Exchange (ETDEWEB)

    Henager, Charles H.; Alvine, Kyle J.; Roosendaal, Timothy J.; Shin, Yongsoon; Nguyen, Ba Nghiep; Borlaug, Brennan A.; Jiang, Weilin

    2014-04-01

    SiC-polymers (pure polycarbosilane and polycarbosilane filled with SiC-particles) are being combined with Si and TiC powders to create a new class of polymer-derived ceramics for consideration as advanced nuclear materials in a variety of applications. Compared to pure SiC these materials have increased fracture toughness with only slightly reduced thermal conductivity. Future work with carbon nanotube (CNT) mats will be introduced with the potential to increase the thermal conductivity and the fracture toughness. At present, this report documents the fabrication of a new class of monolithic polymer derived ceramics, SiC + SiC/Ti3SiC2 dual phase materials. The fracture toughness of the dual phase material was measured to be significantly greater than Hexoloy SiC using indentation fracture toughness testing. However, thermal conductivity of the dual phase material was reduced compared to Hexoloy SiC, but was still appreciable, with conductivities in the range of 40 to 60 W/(m K). This report includes synthesis details, optical and scanning electron microscopy images, compositional data, fracture toughness, and thermal conductivity data.

  7. Structural Properties of Liquid SiC during Rapid Solidification

    Directory of Open Access Journals (Sweden)

    WanJun Yan

    2013-01-01

    Full Text Available The rapid solidification of liquid silicon carbide (SiC is studied by molecular dynamic simulation using the Tersoff potential. The structural properties of liquid and amorphous SiC are analyzed by the radial distribution function, angular distribution function, coordination number, and visualization technology. Results show that both heteronuclear and homonuclear bonds exist and no atomic segregation occurs during solidification. The bond angles of silicon and carbon atoms are distributed at around 109° and 120°, respectively, and the average coordination number is <4. Threefold carbon atoms and fourfold silicon atoms are linked together by six typical structures and ultimately form a random network of amorphous structure. The simulated results help understand the structural properties of liquid and amorphous SiC, as well as other similar semiconductor alloys.

  8. Thermochemistry and growth mechanism of SiC nanowires

    Science.gov (United States)

    Chen, Jianjun; Ding, Lijuan; Xin, Lipeng; Zeng, Fan; Chen, Jun

    2017-09-01

    The chemical reaction thermodynamics and a novel two-stage growth mechanism of SiC nanowires synthesized by carbothermal reduction reactions were investigated based on the Si-C-O systems over a wide temperature range (1050 ≤ T ≤ 2000 K). The carbothermal reduction reaction process involves the fast formation of gaseous SiO and CO crucial intermediates, and the further carbon reduction of SiO to SiC. The relationship between the free energy changes and temperature at different pressures was also discussed. Some fundamental data in the work can help to analyze the thermochemistry of the carbothermal reduction reaction in the Si-C-O system, which is beneficial to optimize the temperature, pressure and the input precursors for controlling the SiC nanowire growth.

  9. Role of atomic terraces and steps in the electron transport properties of epitaxial graphene grown on SiC

    Directory of Open Access Journals (Sweden)

    H. Kuramochi

    2012-03-01

    Full Text Available Thermal decomposition of vicinal SiC substrates with self-organized periodic nanofacets is a promising method to produce large graphene sheets toward the commercial exploitation of graphene's superior electronic properties. The epitaxial graphene films grown on vicinal SiC comprise two distinct regions of terrace and step; and typically exhibit anisotropic electron transport behavior, although limited areas in the graphene film showed ballistic transport. To evaluate the role of terraces and steps in electron transport properties, we compared graphene samples with terrace and step regions grown on 4H-SiC(0001. Arrays of field effect transistors were fabricated on comparable graphene samples with their channels parallel or perpendicular to the nanofacets to identify the source of measured reduced mobility. Minimum conductivity and electron mobility increased with the larger proportional terrace region area; therefore, the terrace region has superior transport properties to step regions. The measured electron mobility in the terrace region, ∼1000 cm2/Vs, is 10 times larger than that in the step region, ∼100 cm2/Vs. We conclusively determine that parasitic effects originate in regions of graphene that grow over step edges in 4H-SiC(0001.

  10. Sobredentadura total superior implantosoportada

    Directory of Open Access Journals (Sweden)

    Luis Orlando Rodríguez García

    2010-06-01

    Full Text Available Se presenta un caso de un paciente desdentado total superior, rehabilitado en la consulta de implantología de la Clínica "Pedro Ortiz" del municipio Habana del Este en Ciudad de La Habana, Cuba, en el año 2009, mediante prótesis sobre implantes osteointegrados, técnica que se ha incorporado a la práctica estomatológica en Cuba como alternativa al tratamiento convencional en los pacientes desdentados totales. Se siguió un protocolo que comprendió una fase quirúrgica, procedimiento con o sin realización de colgajo y carga precoz o inmediata. Se presenta un paciente masculino de 56 años de edad, que acudió a la consulta multidisciplinaria, preocupado, porque se le habían elaborado tres prótesis en los últimos dos años y ninguna reunía los requisitos de retención que él necesitaba para sentirse seguro y cómodo con las mismas. El resultado final fue la satisfacción total del paciente, con el mejoramiento de la calidad estética y funcional.

  11. Detection Simulation of SiC Semiconductor Detector

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hong Yeop; Kim, Jeong Dong; Lee, Yong Deok; Kim, Ho Dong [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-10-15

    In a high radiation environment, it has received attention as a material for detecting radiation (neutron). As the field of application of a SIC neutron detector, the semiconductor detector used in cosmic rays was proposed by Ruddy. Recently, X-ray and low-energy gamma ray spectrometry with SiC detectors has been reported. Its usability has recently been being proved in neutron dose surveillance in BNCT (Boron-Capture Neutron Therapy), thermal neutron detection in a waste drum, nuclear material surveillance, and fast neutron detection. In addition, in 2006, an experiment was actually performed by Natsume on spent nuclear fuel. SIC is suitable for radiation surveillance in a complex radiation field emitted from spent nuclear fuel and the pyropocess process. In the radiation field of spent nuclear fuel, neutrons and gamma rays are generated. In this research, the performance of a SiC detector made at KAERI was evaluated to obtain a discriminated neutron signal. First, using neutron ({sup 252}Cf), alpha ({sup 241}Am), and gamma ({sup 60}Co) sources, a SiC semi- conductor detector was tested. The energy spectrum in a complex radiation field was simulated using the MCNPX 2.5. Finally, the experimental results by Ruddy were compared with the simulation results. Research result, whether the SiC semiconductor detector operating or not was confirmed through the simulation according to the neutron, gamma. The simulation results were similar to those of Ruddy. A further study is underway to investigate the discriminated neutron signal of a complex radiation field.

  12. Packaging Technology for SiC High Temperature Electronics

    Science.gov (United States)

    Chen, Liang-Yu; Neudeck, Philip G.; Spry, David J.; Meredith, Roger D.; Nakley, Leah M.; Beheim, Glenn M.; Hunter, Gary W.

    2017-01-01

    High-temperature environment operable sensors and electronics are required for long-term exploration of Venus and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500 C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors in relevant environments. This talk will discuss a ceramic packaging system developed for high temperature electronics, and related testing results of SiC integrated circuits at 500 C facilitated by this high temperature packaging system, including the most recent progress.

  13. Plasma synthesis and characterization of ultrafine SiC

    Energy Technology Data Exchange (ETDEWEB)

    Vogt, G.J.; Phillips, D.S.; Taylor, T.N.

    1986-01-01

    Ultrafine SiC powders have been prepared by gas phase synthesis from silane and methane in an argon thermal rf-plasma. Bulk properties of the powders were determined by elemental analysis, x-ray diffractin, helium pycnometry, and BET surface area measurements. The near-surface composition and structure of the particles were examined by x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). In addition to free silicon and carbon particles in the powders, free carbon and various silicon/carbon/oxygen species were found on the surface of the SiC particles.

  14. Development of CVD Mullite Coatings for SiC Fibers

    Energy Technology Data Exchange (ETDEWEB)

    Sarin, V.K.; Varadarajan, S.

    2000-03-15

    A process for depositing CVD mullite coatings on SiC fibers for enhanced oxidation and corrosion, and/or act as an interfacial protective barrier has been developed. Process optimization via systematic investigation of system parameters yielded uniform crystalline mullite coatings on SiC fibers. Structural characterization has allowed for tailoring of coating structure and therefore properties. High temperature oxidation/corrosion testing of the optimized coatings has shown that the coatings remain adherent and protective for extended periods. However, preliminary tests of coated fibers showed considerable degradation in tensile strength.

  15. On the band gap variation in SiC polytypes

    Energy Technology Data Exchange (ETDEWEB)

    Haeringen, W. van; Bobbert, P.A.; Backes, W.H. [Technische Univ. Eindhoven (Netherlands). Dept. of Physics

    1997-07-01

    Electronic band gaps of SiC polytypes are reproduced within an interface matching technique of electronic wave functions. Essential features resulting from this treatment are introduced in a one-dimensional model, leading to a transparent description of the electronic band gap variation among polytypes. It is discussed in what sense the polytypes of SiC are exceptional in showing a relatively strong band gap variation, contrary to e.g. polytypes of ZnS and hypothetical polytypes made up from Si, C or AlAs. (orig.) 36 refs.

  16. On the Band Gap Variation in SiC Polytypes

    Science.gov (United States)

    van Haeringen, W.; Bobbert, P. A.; Backes, W. H.

    1997-07-01

    Electronic band gaps of SiC polytypes are reproduced within an interface matching technique of electronic wave functions. Essential features resulting from this treatment are introduced in a one-dimensional model, leading to a transparent description of the electronic band gap variation among polytypes. It is discussed in what sense the polytypes of SiC are exceptional in showing a relatively strong band gap variation, contrary to e.g. polytypes of ZnS and hypothetical polytypes made up from Si, C or AlAs.

  17. First-principle Calculation of the Properties of Ti3SiC2

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The electronic and structural properties for Ti3SiC2 were studied using the first-principle calculation method. By using the calculated band structure and density of states, the high electrical conductivity of Ti3SiC2 are explained.The bonding character of Ti3SiC2 is analyzed in the map of charge density distribution.

  18. Influence of microstructure on hydrothermal corrosion of chemically vapor processed SiC composite tubes

    Science.gov (United States)

    Kim, Daejong; Lee, Ho Jung; Jang, Changheui; Lee, Hyeon-Geun; Park, Ji Yeon; Kim, Weon-Ju

    2017-08-01

    Multi-layered SiC composites consisting of monolithic SiC and a SiCf/SiC composite are one of the accident tolerant fuel cladding concepts in pressurized light water reactors. To evaluate the integrity of the SiC fuel cladding under normal operating conditions of a pressurized light water reactor, the hydrothermal corrosion behavior of multi-layered SiC composite tubes was investigated in the simulated primary water environment of a pressurized water reactor without neutron fluence. The results showed that SiC phases with good crystallinity such as Tyranno SA3 SiC fiber and monolithic SiC deposited at 1200 °C had good corrosion resistance. However, the SiC phase deposited at 1000 °C had less crystallinity and severely dissolved in water, particularly the amorphous SiC phase formed along grain boundaries. Dissolved hydrogen did not play a significant role in improving the hydrothermal corrosion resistance of the CVI-processed SiC phases containing amorphous SiC, resulting in a significant weight loss and reduction of hoop strength of the multi-layered SiC composite tubes after corrosion.

  19. P-N junction and metal contact reliability of SiC diode in high temperature (873 K) environment

    Science.gov (United States)

    Chand, R.; Esashi, M.; Tanaka, S.

    2014-04-01

    This paper reports the high temperature test results of SiC p-n junction diode up to 873 K. No significant change in diode series resistance (Rs) and a diode ideality factor of 1.02 were confirmed in air. We used the 4H-SiC diode which had a contact pad area of 300 μm × 300 μm and a junction area of 220 μm × 220 μm. Ohmic contact on both p and n (i.e. front and back) sides were made by Ni, because nickel silicide (NiSi) provides good ohmic contact for high temperature applications. The electrical contact pads of the SiC diode were made by sputter-depositing Ni or Pt on the NiSi ohmic contact. High temperature aging tests at 673 K, 773 K and 873 K were carried out in air, and the forward current-voltage (I-V) characteristics of the SiC diodes were measured at different time intervals to observe change in the junction and series resistance. Stable p-n junction characteristic and constant series resistance were confirmed for the Pt-metalized diodes at 673 K, 773 K and 873 K. However, the Ni-metallized diodes showed marginal increase in series resistance due to the oxidation of Ni metal contacts.

  20. Long SiC nanowires synthesized from off-gases of the polycarbosilane-derived SiC preparation

    Energy Technology Data Exchange (ETDEWEB)

    Li, Gong-Yi; Li, Xiao-Dong; Wang, Hao [National University of Defense Technology, State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace and Materials Engineering, Changsha (China); Liu, Lin [Wuhan Mechanical Technology College, Wuhan (China)

    2010-02-15

    In this communication, we report on the attempt to make full use of the off-gases from polycarbosilane-derived SiC preparation, and we successfully synthesized long SiC nanowires in large areas with Fe(NO{sub 3}){sub 3} as catalyst. The nanowires have diameters of about 80-300 nm and lengths of millimeters, and they are identified as single crystals {beta}-SiC along the left angle 111 right angle direction. The VLS mechanism was employed to interpret the nanowire growth. (orig.)

  1. Performance Evaluation of Split Output Converters with SiC MOSFETs and SiC Schottky Diodes

    OpenAIRE

    Yan, Qingzeng; Yuan, Xibo; Geng, Yiwen; Charalambous, Apollo; Wu, Xioajie

    2017-01-01

    The adoption of silicon carbide (SiC) MOSFETS and SiC Schottky diodes in power converters promises a further improvement of the attainable power density and system efficiency, while it is restricted by several issues caused by the ultra-fast switching, such as phase-leg shoot-through (‘crosstalk’ effect), high turn-on losses, electromagnetic interference (EMI), etc. This paper presents a split output converter which can overcome the limitations of the standard two-level voltage source convert...

  2. Avaliação da geração de microtrincas do aço rápido ABNT M2 no processo EDM com adição de SiC = Evaluation of microcrack formation of ABNT M2 high speed steel in the EDM process, with addition of silicon carbide powder

    Directory of Open Access Journals (Sweden)

    Jean Robert Pereira Rodrigues

    2008-07-01

    Full Text Available É sabido que a Usinagem por Descargas Elétricas (EDM é um processo térmico em que pode haver temperaturas muito elevadas (superiores a 1.200°C na região de usinagem. Consequentemente é fácil de entender o fato de as peças usinadas por EDM apresentarem camadas superficiais endurecidas, refundidas e com elevado número de microtrincas superficiais. A formação de microtrincas está associada com o desenvolvimento de altas tensões térmicas que excedem a tensão máxima de resistência do material. Além disso, as microtrincas superficiais penetram em profundidade com extensões que dependem da energia de descarga. O trabalho proposto tem por objetivo estudar o efeito da adição de pó de SiC em vários fluidos dielétricos, sobre a geração de microtrincas superficiais, no aço rápido ABNT M2, durante a usinagem por descargas elétricas. Os resultados apresentados mostramredução da quantidade de microtrincas nas superfícies usinadas, quando se adiciona pó de SiC ao dielétrico, quando comparadas com as usinadas com EDM convencional.It is known that Electrical Discharge Machining (EDM is a thermal process in which extremely high temperatures (in excess of 1200°C can occur in the machining area. Consequently, it is easy tounderstand that during each electric discharge, high temperatures are generated, causing local fusion or even evaporation of the machined material. In each discharge, a crater is formed in the material and a small crater is formed in the electrode. Of every meltedmaterial produced in each discharge, only 15% or less is removed using dielectric fluid. The remaining melted material solidifies, forming a wrinkled surface. The characteristics of theobtained surface – overlap of craters, globules of sullage, chimneys, bubbles (formed when the gases arrested are liberated through the resolidified material – are revealed through an analysis using a scanning electron microscope. The proposed work has as its objective

  3. Conducted EMI in Inverters with SiC Transistors

    NARCIS (Netherlands)

    Gong, X.

    2013-01-01

    Conducted EMI in Inverters with SiC Transistors Electromagnetic Interference (EMI) is the main side effect accompanied with the fast voltage and current switching transients in power electronics applications. Compliance of the Electromagnetic Compatibility (EMC) standard is prescribed for any power

  4. Conducted EMI in Inverters with SiC Transistors

    NARCIS (Netherlands)

    Gong, X.

    2013-01-01

    Conducted EMI in Inverters with SiC Transistors Electromagnetic Interference (EMI) is the main side effect accompanied with the fast voltage and current switching transients in power electronics applications. Compliance of the Electromagnetic Compatibility (EMC) standard is prescribed for any power

  5. -SiC nanocomposite coatings synthesized by co-electrodeposition

    Science.gov (United States)

    Masoudi, Mehran; Hashim, Mansor; Kamari, Halimah Mohamed

    2014-08-01

    In the present work, Ni-Al2O3, Ni-SiC and novel Ni-Al2O3-SiC metal matrix composite (MMC) coatings were electrodeposited onto pure copper samples using a modified Watt's nickel electroplating bath containing nano alumina and silicon carbide particles with an average particle size of 50 nm. The composition, crystalline structure and surface morphology of the deposits were characterized by X-ray diffractometry (XRD), energy-dispersive X-ray spectroscopy (EDS) and field emission scanning electron microscopy (FESEM). The results indicated that Ni-Al2O3-SiC hybrid composite films with an acceptable homogeneity and granular structure having 9.2 and 7.7 % vol. Al2O3 and SiC nanoparticles, respectively were developed successfully. The nanoparticles incorporated in the nickel layer effectively increased the micro hardness and wear resistance owing to dispersion and grain-refinement strengthening, changing the nickel matrix morphology as well as the texture and preferred grain growth direction from to the close-packed . The oxidation resistance of the Ni-Al2O3-SiC hybrid composite coatings was measured to be approximately 41 % greater than the unreinforced Ni deposit and almost 30 % better than the Ni-Al2O3 composite coatings.

  6. Saturn V Stage I (S-IC) Overview

    Science.gov (United States)

    Interbartolo, Michael

    2009-01-01

    Objectives include: a) Become familiar with the Saturn V Stage I (S-IC) major structural components: Forward Skirt, Oxidizer Tank, Intertank, Fuel Tank, and Thrust Structure. b) Gain a general understanding of the Stage I subsystems: Fuel, Oxidizer, Instrumentation, Flight Control, Environmental Control, Electrical, Control Pressure, and Ordinance.

  7. Advanced Capacitor with SiC for High Temperature Applications

    Science.gov (United States)

    Tsao, B. H.; Ramalingam, M. L.; Bhattacharya, R. S.; Carr, Sandra Fries

    1994-07-01

    An advanced capacitor using SiC as the dielectric material has been developed for high temperature, high power, and high density electronic components for aircraft and aerospace application. The conventional capacitor consists of a large number of metallized polysulfone films that are arranged in parallel and enclosed in a sealed metal case. However, problems with electrical failure, thermal failure, and dielectric flow were experienced by Air Force suppliers for the component and subsystem for lack of suitable properties of the dielectric material. The high breakdown electrical field, high thermal conductivity, and high temperature operational resistance of SiC compared to similar properties of the conventional ceramic and polymer capacitor would make it a better choice for a high temperature, and high power capacitor. The quality of the SiC film was evaluated. The electrical parameters, such as the capacitance, dissipation factor, equivalent series resistance, and dielectric withstand voltage, were evaluated. The prototypical capacitors are currently being fabricated using SiC film.

  8. Fission-product SiC reaction in HTGR fuel

    Energy Technology Data Exchange (ETDEWEB)

    Montgomery, F.

    1981-07-13

    The primary barrier to release of fission product from any of the fuel types into the primary circuit of the HTGR are the coatings on the fuel particles. Both pyrolytic carbon and silicon carbide coatings are very effective in retaining fission gases under normal operating conditions. One of the possible performance limitations which has been observed in irradiation tests of TRISO fuel is chemical interaction of the SiC layer with fission products. This reaction reduces the thickness of the SiC layer in TRISO particles and can lead to release of fission products from the particles if the SiC layer is completely penetrated. The experimental section of this report describes the results of work at General Atomic concerning the reaction of fission products with silicon carbide. The discussion section describes data obtained by various laboratories and includes (1) a description of the fission products which have been found to react with SiC; (2) a description of the kinetics of silicon carbide thinning caused by fission product reaction during out-of-pile thermal gradient heating and the application of these kinetics to in-pile irradiation; and (3) a comparison of silicon carbide thinning in LEU and HEU fuels.

  9. Microstructural characteristics and properties in centrifugal casting of SiC_p/Zl104 composite

    Institute of Scientific and Technical Information of China (English)

    WANG Kai; XUE Han-song; ZOU Mao-hua; LIU Chang-ming

    2009-01-01

    The microstructural characteristics and Brinell hardness of a cylinder produced by centrifugal casting were investigated using 20% (volume fraction) SiC_p/Zl104 composites.Macrostructure and XRD analysis show that most of SiC particles segregate to the external circumference of the cylinder,the other SiC particles maintain in the inner circumference of the cylinder,and a free particle zone is left in the middle circumference of the cylinder.Microstructural characteristics and quantitative assessment of SiC particles show that most of congregated SiC particles in 20%SiC_p/Zl104 composites are dispersed by centrifugal force,and the other congregated SiC particles and most of alumina oxide are segregated to the inner circumference of the cylinder.The SiC particles in aluminum melt can promote the refinement of primary α(Al) during solidification,and fine primary α(Al) grains can also promote the uniform distribution of SiC particles.Brinell hardness of SiC_p/Zl104 composites is connected with not only the volume fraction of SiC particles,but also the distribution of SiC particles in matrix alloy.

  10. First principle identification of SiC monolayer as an efficient catalyst for CO oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Sinthika, S., E-mail: ranjit.t@res.srmuniv.ac.in, E-mail: sinthika90@gmail.com; Thapa, Ranjit, E-mail: ranjit.t@res.srmuniv.ac.in, E-mail: sinthika90@gmail.com [SRM Research Institute, SRM University, Kattankulathur 603203, Tamil Nadu (India); Reddy, C. Prakash [Department of Physics and Nanotechnology, SRM University, Kattankulathur 603203, Tamil Nadu (India)

    2015-06-24

    Using density functional theory, we investigated the electronic properties of SiC monolayer and tested its catalytic activity toward CO oxidation. The planar nature of a SiC monolayer is found to stable and is a high band gap semiconductor. CO interacts physically with SiC surface, whereas O{sub 2} is adsorbed with moderate binding. CO oxidation on SiC monolayer prefers the Eley Rideal mechanism over the Langmuir Hinshelwood mechanism, with an easily surmountable activation barrier during CO{sub 2} formation. Overall metal free SiC monolayer can be used as efficient catalyst for CO oxidation.

  11. Si3N4/SiC nanocomposite powder from a preceramic polymeric network based on poly(methylsilane as the SiC precursor

    Directory of Open Access Journals (Sweden)

    Maurício F. Gozzi

    2001-01-01

    Full Text Available Si3N4/SiC nanocomposite powders were obtained from a preceramic polymeric network based on poly(methylsilane as the in situ quasi-stoichiometric SiC source. These powders were constituted of nanosized SiC particles homogeneously distributed in the Si3N4 particulate matrix. beta-SiC whiskers were grown at 1400 °C in the pores of the matrix. At 1600 °C, the alpha -> beta Si3N4 phase transition took place, but no elemental silicon from Si3N4 decomposition was detected, evidencing the protective effect of the SiC phase.

  12. SiC polytypes and doping nature effects on electrical properties of ZnO-SiC Schottky diodes

    OpenAIRE

    Rebaoui, Z.; Bouiajra, W.B.; Abboun Abid, M.; Saidane, A.; Jameel, D.; HENINI, M.; Felix, J. F.

    2017-01-01

    Electrical properties of ZnO/SiC Schottky diodes with two SiC polytypes and N and P doping are investigated. Characterization was performed through I–V and C–V–f measurements. Schottky barrier height (Φb), ideality factor (n), and series resistance (Rs) were extracted from forward I–V characteristics. (Φb), carrier’s concentrations (Nd-Na) and (Rs) frequency dependence were extracted from C–V–f characteristics. The extracted n values suggest that current transport is dominated by interface ge...

  13. PhySIC: a veto supertree method with desirable properties.

    Science.gov (United States)

    Ranwez, Vincent; Berry, Vincent; Criscuolo, Alexis; Fabre, Pierre-Henri; Guillemot, Sylvain; Scornavacca, Celine; Douzery, Emmanuel J P

    2007-10-01

    This paper focuses on veto supertree methods; i.e., methods that aim at producing a conservative synthesis of the relationships agreed upon by all source trees. We propose desirable properties that a supertree should satisfy in this framework, namely the non-contradiction property (PC) and the induction property (PI). The former requires that the supertree does not contain relationships that contradict one or a combination of the source topologies, whereas the latter requires that all topological information contained in the supertree is present in a source tree or collectively induced by several source trees. We provide simple examples to illustrate their relevance and that allow a comparison with previously advocated properties. We show that these properties can be checked in polynomial time for any given rooted supertree. Moreover, we introduce the PhySIC method (PHYlogenetic Signal with Induction and non-Contradiction). For k input trees spanning a set of n taxa, this method produces a supertree that satisfies the above-mentioned properties in O(kn(3) + n(4)) computing time. The polytomies of the produced supertree are also tagged by labels indicating areas of conflict as well as those with insufficient overlap. As a whole, PhySIC enables the user to quickly summarize consensual information of a set of trees and localize groups of taxa for which the data require consolidation. Lastly, we illustrate the behaviour of PhySIC on primate data sets of various sizes, and propose a supertree covering 95% of all primate extant genera. The PhySIC algorithm is available at http://atgc.lirmm.fr/cgi-bin/PhySIC.

  14. Effects of surface oxide species and contents on SiC slurry viscosity

    Institute of Scientific and Technical Information of China (English)

    NING Shufan; LI Hongyan; CHEN Wei; LIU Bin; CHEN Shoutian

    2005-01-01

    The disadvantageous effects of colloidal SiO2 layer and micro-content of metal oxide adsorbed on SiC powder surface on SiC slurry stable dispersion were studied, and the novel method to avoid this disadvantage was proposed. By acidwashing, on the one hand, because the maximum Zeta potential of SiC powder increases to 72.49 mV with the decreasing content of metal oxide adsorbed on the SiC powder surface, the repulsion force between SiC powders that dispersed in slurry is enhanced, thus the SiC powder can be fully dispersed in slurry. On the other hand, after HF acidwashing, with the OH- group adsorbed on SiC powder surface destroyed and replaced by the F- ion, the hydrogen bond adsorbed on the OH-group is also destroyed. Therefore, the surface property of the SiC powder is changed from hydrophilic to hydrophobic;H2O that adsorbed on SiC powder surface is released and can flow freely, and it actually increases the content of the effective flow phase in the slurry. These changes of SiC powder surface property can be proved by XPS and FTIR analysis. Fivolume fraction of SiC powder in the slurry is maximized to 61.5 vol.%.

  15. Crack Propagation Behaviors of Multi-Layered SiC Composite Tubes

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Daejong; Lee, Donghee; Lee, Hyeon-Geun; Park, Ji Yeon; Kim, Weon-Ju [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2015-10-15

    SiC composite cladding has various advantages compared to current Zr alloy cladding in terms of accident resistance and neutron economy. However, its brittle properties and corresponding low reliability make it difficult for a use of SiC ceramics as cladding materials. In this study, fracture behaviors of several SiC composite cladding tubes, particularly crack propagation behavior were evaluated using an acoustic emission method. AE analysis is a useful tool for examination of the multi-layered SiC composite with complex structure which provides information of crack propagation. Failure of an inner monolith SiC in the triplex SiC composite tube will cause significant problems such as hermeticity, degradation of SiC{sub f}/SiC. Duplex SiC composite might be the alternative.

  16. Preparation and mechanical properties of SiC/2024 composite by semisolid casting

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A SiC/2024 composite was made by semisolid casting. The wetting between SiC and Al matrix is improved by treating SiC particles at a high temperature, coating K2ZrF6, and adding Mg to the Al melt. An effective way to remove the gas around SiC particles was also found. Microsturctures were observed under optical microscope (OM) and scanning electron microscopy (SEM). The results show that SiC particles and Al matrix are well bonded and no gaps or cavities around the particles are observed. SiC particles distribute homogeneously in the Al matrix. The existence of SiC particles results in the increase of wear resistance and strength.

  17. Effect of SiC Nanoparticles on Bond Strength of Cold Roll Bonded IF Steel

    Science.gov (United States)

    Jamaati, Roohollah; Toroghinejad, Mohammad Reza; Edris, Hossein

    2013-11-01

    In this study, cold roll bonding process characteristics of IF steel strips, such as bond strength, threshold deformation, undulation of peeling force, and peeled surface, in the presence of SiC nanoparticles were examined and compared to those of an IF steel strip without nanoparticles. The bond strength was evaluated by the peeling test and scanning electron microscopy. It was found that when the thickness reduction was increased, the peeling force of IF steel strips improved. The results also indicated that the presence of silicon carbide nanoparticles decreased the bond strength of IF steel strips when compared to the strips without nanoparticles for the same thickness reduction. When the thickness reduction was increased, the undulation of average peeling force values increased at a constant nanoparticle content. Also, the strips without nanoparticles had a lower undulation value as compared to the strips with SiC nanoparticles. In addition, in the presence of silicon carbide, when the nanoparticles' content was increased, the undulation of average peeling force values decreased at a constant thickness reduction. Finally, it was found that the bond strength of IF steel strips was less than that of aluminum and copper strips. This was attributed to their crystal structure.

  18. Semi-transparent SiC Schottky diodes for X-ray spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Lees, J.E. [Space Research Centre, Department of Physics and Astronomy, Michael Atiyah Building, University of Leicester, Leicester LE1 7RH (United Kingdom)]. E-mail: lee@star.le.ac.uk; Bassford, D.J. [Space Research Centre, Department of Physics and Astronomy, Michael Atiyah Building, University of Leicester, Leicester LE1 7RH (United Kingdom); Fraser, G.W. [Space Research Centre, Department of Physics and Astronomy, Michael Atiyah Building, University of Leicester, Leicester LE1 7RH (United Kingdom); Horsfall, A.B. [Semiconductor Technology Group, School of Electrical, Electronic and Computer Engineering, Merz Court, University of Newcastle, Newcastle NE1 7RU (United Kingdom); Vassilevski, K.V. [Semiconductor Technology Group, School of Electrical, Electronic and Computer Engineering, Merz Court, University of Newcastle, Newcastle NE1 7RU (United Kingdom); Wright, N.G. [Semiconductor Technology Group, School of Electrical, Electronic and Computer Engineering, Merz Court, University of Newcastle, Newcastle NE1 7RU (United Kingdom); Owens, A. [Office of Science Payload and Advanced Concepts, European Space Agency ESTEC SCI-A, Postbus 299, 2200AG Noordwijk (Netherlands)

    2007-07-21

    We describe a novel SiC Schottky diode architecture. The semi-transparent SiC Schottky diode has an 'ultra-thin' (18 nm Ni/Ti) Schottky contact, a gold annular overlayer and a gold corner-contact pad. We show that the new architecture exhibits the same essential characteristics as a more conventional 'thick-contact' Schottky diode ({>=}100 nm). Such diodes will have a higher efficiency for low-energy (<5 keV) X-rays than that of conventional structures combined with minimal self-fluorescence from the electrode materials. We present X-ray spectra from {sup 55}Fe, {sup 109}Cd and {sup 241}Am radioactive sources that show these diodes can be used for spectroscopy with promising energy resolution (1.47 keV FWHM at 22 keV) at room temperature (23 {sup o}C). The reduction in contact thickness, however, does reduce the barrier height of the new diodes in comparison to those fabricated using the conventional process, and requires a trade-off between the low-energy detection threshold and the noise in the detector.

  19. LOW ACTIVATION JOINING OF SIC/SIC COMPOSITES FOR FUSION APPLICATIONS: MODELING DUAL-PHASE MICROSTRUCTURES AND DISSIMILAR MATERIAL JOINTS

    Energy Technology Data Exchange (ETDEWEB)

    Henager, Charles H.; Nguyen, Ba Nghiep; Kurtz, Richard J.; Ferraris, M.; Katoh, Y.

    2016-03-31

    Finite element continuum damage models (FE-CDM) have been developed to simulate and model dual-phase joints and cracked joints for improved analysis of SiC materials in nuclear environments. This report extends the analysis from the last reporting cycle by including results from dual-phase models and from cracked joint models.

  20. Synthesis of whiskers of SiC microwave assisted; Sintesis de whiskers de SiC asistida por microondas

    Energy Technology Data Exchange (ETDEWEB)

    Garza-Mendez, F. J.; Vanegas, A. J.; Vazquez, B. A.; Garza-Paz, J.

    2013-06-01

    We developed a new process for the synthesis of SiC whiskers assisted by microwaves; this is based on the mixture of silica xerogels and graphite powder. As energy source were used microwaves of 2.45 GHz and 1.0 kW of power RMS. On the other hand, mesoporous silica was synthesized via sol-gel, the precursors used were TEOS/H{sub 2}O and ethanol. Through analysis of the BET is determined the value of average pore size (3.0 nm) and the surface area (1090 m2/g).By mean of X-Ray diffraction it was demonstrated that the silica obtained is an amorphous solid and, the powders obtained in the microwave synthesis are {beta}-SiC. Synthesized SiC powders were observed using a SEM in secondary electron mode, it was observed that this powders consists of SiC whiskers. The effect of microwaves on the synthesis of whiskers of SiC is discussed in the present work. (Author) 19 refs.

  1. 半导体用高纯超细SiC粉体的表面改性%Surface Modification of High Ultrafine SiC Powders for Semiconductor Manufacturing

    Institute of Scientific and Technical Information of China (English)

    李星; 铁生年

    2011-01-01

    The modified SiC powders was prepared by organics coating method.The coupling agent was used as bridge to connet the SiC powders and the organic polymers.Sodium polyacrylate as a dispersion functional layer was formed on the surface of SiC powders by graft polymerization reaction.Zeta potential of SiC powders was tested and the effect of suface modification on the dispersion and fluidity of SiC slurry was discussed.The results showed that the SiC powders treated by modification did not change the phase structure of original SiC powder, it just changed the colloidal properties in water, reunion reduced and dispersion property improved of SiC powders.Compared with the original SiC powders, the surface characteristics of the modified SiC powders occurred a great change and zeta potential improved.The dispersion stabilization of SiC slurry increased remarkably and viscosity decreased.%通过偶联剂预处理、接枝聚合丙烯酸钠两步法对SiC粉体进行表面改性,制备聚丙烯酸钠接枝改性SiC粉体,并对改性粉体进行表征,测试SiC粉体的zeta电位,讨论改性对SiC粉体料浆分散稳定性和流动性的影响.结果表明:SiC微粉经表面改性后并未改变原始SiC微粉的物相结构,只是改变其在水中的胶体性质;微粉团聚现象减少,分散性得到改善;改性SiC微粉与原始SiC微粉相比,表面特性发生很大变化,zeta电位值显著提高,悬浮液的分散稳定性得到明显改善,且黏度降低.

  2. Substrate temperature effect on the SiC passivation layer synthesized by an RF magnetron sputtering method

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Jae Keun; Joung, Yeun-Ho [School of Electrical Engineering, Hanbat National University, Daejeon 305-719 (Korea, Republic of); Park, Young [Korea Railroad Research Institute, Uiwang 437-757 (Korea, Republic of); Choi, Won Seok, E-mail: wschoi@hanbat.ac.kr [School of Electrical Engineering, Hanbat National University, Daejeon 305-719 (Korea, Republic of)

    2011-08-01

    This paper describes amorphous silicon carbide (a-SiC) film as an alternative material to silicon nitride (SiN) and silicon oxide (SiO{sub 2}) for the passivation layer of solar cells. We deposited the film on p-type silicon (100) wafers and glass substrates by RF magnetron sputtering using a SiC (99%) target. Structural and optical properties of the films were investigated according to the process temperature (room temperature, 300 deg. C, 400 deg. C, 500 deg. C and 600 deg. C). The structural properties were analyzed by Raman microscopy and XPS (X-ray Photoelectron Spectroscopy). The XPS showed that the content of SiC in the film is increased when the substrate temperature is higher. The optical properties of the films were examined by UV-visible spectroscopy and Ellipsometer. The optical characteristic measurement showed that the lowest refractive index of the film is 2.65. Also, using carrier lifetime measurement, we investigated the performance of SiC as the passivation layer. At the substrate temperature of 600 deg. C, we obtained a highest carrier lifetime of 7.5 {mu}s.

  3. Electroluminescence of Zn{sub 2}GeO{sub 4}:Mn through SiC whisker electric field enhancement

    Energy Technology Data Exchange (ETDEWEB)

    Wagstaff, Brandon, E-mail: wagstabj@mcmaster.ca [McMaster University, Department of Engineering Physics, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4L8 (Canada); Kitai, Adrian, E-mail: kitaia@mcmaster.ca [McMaster University, Department of Engineering Physics, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4L8 (Canada); McMaster University, Department of Materials Science and Engineering, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4L8 (Canada)

    2015-11-15

    Alternating current (AC) electroluminescence of thin film oxide phosphors is well known. However in this work electroluminescence of bulk oxide powder phosphors is achieved. A new type of AC Electroluminescent (ACEL) device has been created and developed by integrating SiC whiskers into a phosphor matrix composed of manganese-activated zinc germanate (Zn{sub 2}GeO{sub 4}:Mn{sup 2+}). The conductive SiC whiskers enhance the average electric field in specific regions of the phosphor such that localized breakdown of the phosphor occurs, thus emitting green light. This field enhancement allows light emission to occur in thick film oxide powder phosphors and is notably the first time that bright and reasonably efficient electroluminescence of zinc germanate has been observed without using expensive thin film deposition techniques. Light emission has been achieved in thick pressed pellets using surface-deposited electrodes and the brightness-voltage characteristics of light emission are shown to be consistent with field emission of carriers from the embedded whiskers. - Highlights: • A new electroluminescent phosphor, Zn{sub 2}GeO{sub 4}Mn{sup 2+}+SiC whiskers, is proposed. • A procedure is described to fabricate a solid sample of this composite material. • Under an AC voltage, green light is emitted only in samples containing the SiC whiskers. • A brightness of 25 Cd/m{sup 2} and efficiency of 0.25 Lm/W is observed 9.6×10{sup 6} V/m. • This is notably the first time that ACEL has been observed in bulk Zn{sub 2}GeO{sub 4}Mn{sup 2+}.

  4. Pd/CeO2/SiC Chemical Sensors

    Science.gov (United States)

    Lu, Weijie; Collins, W. Eugene

    2005-01-01

    The incorporation of nanostructured interfacial layers of CeO2 has been proposed to enhance the performances of Pd/SiC Schottky diodes used to sense hydrogen and hydrocarbons at high temperatures. If successful, this development could prove beneficial in numerous applications in which there are requirements to sense hydrogen and hydrocarbons at high temperatures: examples include monitoring of exhaust gases from engines and detecting fires. Sensitivity and thermal stability are major considerations affecting the development of high-temperature chemical sensors. In the case of a metal/SiC Schottky diode for a number of metals, the SiC becomes more chemically active in the presence of the thin metal film on the SiC surface at high temperature. This increase in chemical reactivity causes changes in chemical composition and structure of the metal/SiC interface. The practical effect of the changes is to alter the electronic and other properties of the device in such a manner as to degrade its performance as a chemical sensor. To delay or prevent these changes, it is necessary to limit operation to a temperature CeO2 films is based partly on the observation that nanostructured materials in general have potentially useful electrical properties, including an ability to enhance the transfer of electrons. In particular, nanostructured CeO2, that is CeO2 with nanosized grains, has shown promise for incorporation into hightemperature electronic devices. Nanostructured CeO2 films can be formed on SiC and have been shown to exhibit high thermal stability on SiC, characterized by the ability to withstand temperatures somewhat greater than 700 C for limited times. The exchanges of oxygen between CeO2 and SiC prevent the formation of carbon and other chemical species that are unfavorable for operation of a SiC-based Schottky diode as a chemical sensor. Consequently, it is anticipated that in a Pd/CeO2/SiC Schottky diode, the nanostructured interfacial CeO2 layer would contribute to

  5. Astrocyte-Dependent Slow Inward Currents (SICs) Participate in Neuromodulatory Mechanisms in the Pedunculopontine Nucleus (PPN)

    Science.gov (United States)

    Kovács, Adrienn; Pál, Balázs

    2017-01-01

    Slow inward currents (SICs) are known as excitatory events of neurons caused by astrocytic glutamate release and consequential activation of neuronal extrasynaptic NMDA receptors. In the present article we investigate the role of these astrocyte-dependent excitatory events on a cholinergic nucleus of the reticular activating system (RAS), the pedunculopontine nucleus (PPN). It is well known about this and other elements of the RAS, that they do not only give rise to neuromodulatory innervation of several areas, but also targets neuromodulatory actions from other members of the RAS or factors providing the homeostatic drive for sleep. Using slice electrophysiology, optogenetics and morphological reconstruction, we revealed that SICs are present in a population of PPN neurons. The frequency of SICs recorded on PPN neurons was higher when the soma of the given neuron was close to an astrocytic soma. SICs do not appear simultaneously on neighboring neurons, thus it is unlikely that they synchronize neuronal activity in this structure. Occurrence of SICs is regulated by cannabinoid, muscarinic and serotonergic neuromodulatory mechanisms. In most cases, SICs occurred independently from tonic neuronal currents. SICs were affected by different neuromodulatory agents in a rather uniform way: if control SIC activity was low, the applied drugs increased it, but if SIC activity was increased in control, the same drugs lowered it. SICs of PPN neurons possibly represent a mechanism which elicits network-independent spikes on certain PPN neurons; forming an alternative, astrocyte-dependent pathway of neuromodulatory mechanisms. PMID:28203147

  6. Effects of SiC on Properties of Cu-SiC Metal Matrix Composites

    Science.gov (United States)

    Efe, G. Celebi; Altinsoy, I.; Ipek, M.; Zeytin, S.; Bindal, C.

    2011-12-01

    This paper was focused on the effects of particle size and distribution on some properties of the SiC particle reinforced Cu composites. Copper powder produced by cementation method was reinforced with SiC particles having 1 and 30 μm particle size and sintered at 700 °C. SEM studies showed that SiC particles dispersed in copper matrix homogenously. The presence of Cu and SiC components in composites were verified by XRD analysis technique. The relative densities of Cu-SiC composites determined by Archimedes' principle are ranged from 96.2% to 90.9% for SiC with 1 μm particle size, 97.0 to 95.0 for SiC with 30 μm particle size. Measured hardness of sintered compacts varied from 130 to 155 HVN for SiC having 1 μm particle size, 188 to 229 HVN for SiC having 1 μm particle size. Maximum electrical conductivity of test materials was obtained as 80.0% IACS (International annealed copper standard) for SiC with 1 μm particle size and 83.0% IACS for SiC with 30 μm particle size.

  7. Creep behavior for advanced polycrystalline SiC fibers

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Kohyama, Akira [Kyoto Univ. (Japan)] [and others

    1997-04-01

    A bend stress relaxation (BSR) test has been utilized to examine irradiation enhanced creep in polycrystalline SiC fibers which are under development for use as fiber reinforcement in SiC/SiC composite. Qualitative, S-shaped 1hr BSR curves were compared for three selected advanced SiC fiber types and standard Nicalon CG fiber. The temperature corresponding to the middle of the S-curve (where the BSR parameter m = 0.5) is a measure of a fiber`s thermal stability as well as it creep resistance. In order of decreasing thermal creep resistance, the measured transition temperatures were Nicalon S (1450{degrees}C), Sylramic (1420{degrees}C), Hi-Nicalon (1230{degrees}C) and Nicalon CG (1110{degrees}C).

  8. Surface engineering of SiC via sublimation etching

    Science.gov (United States)

    Jokubavicius, Valdas; Yazdi, Gholam R.; Ivanov, Ivan G.; Niu, Yuran; Zakharov, Alexei; Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa

    2016-12-01

    We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10-5 mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  9. Nucleation and growth of polycrystalline SiC

    DEFF Research Database (Denmark)

    Kaiser, M.; Schimmel, S.; Jokubavicius, V.

    2014-01-01

    R polytypes. It is found that pyrolytic graphite results in enhanced texturing of the nucleating gas species. Reducing the pressure leads to growth of the crystallites until a closed polycrystalline SiC layer containing voids with a rough surface is developed. Bulk growth was conducted at 35 mbar Ar...... pressure at 2250°C in diffusion limited mass transport regime generating a convex shaped growth form of the solid-gas interface leading to lateral expansion of virtually [001] oriented crystallites. Growth at 2350°C led to the stabilization of 6H polytypic grains. The micropipe density in the bulk strongly......The nucleation and bulk growth of polycrystalline SiC in a 2 inch PVT setup using isostatic and pyrolytic graphite as substrates was studied. Textured nucleation occurs under near-thermal equilibrium conditions at the initial growth stage with hexagonal platelet shaped crystallites of 4H, 6H and 15...

  10. Progress of d0 magnetism in SiC

    Science.gov (United States)

    Wang, Yutian; Liu, Chenguang; Zhang, Yuming

    2017-03-01

    The properties of defect-induced ferromagnetism ({{{d}}}0 magnetism) in SiC belong to carbon-based material which has been systematically investigated after graphite. In this paper, we reviewed our research progress about {{{d}}}0 magnetism in two aspects, i.e., magnetic source and magnetic coupling mechanism. The {{{V}}}{{Si}} {{{V}}}{{C}} divacancies have been evidenced as the probable source of {{{d}}}0 magnetism in SiC. To trace the ferromagnetic source in microscopic and electronic view, the p electrons of the nearest-neighbor carbon atoms, which are around the {{{V}}}{{Si}} {{{V}}}{{C}} divacancies, are sourced. For magnetic coupling mechanism, a higher divacancy concentration leads to stronger paramagnetic interaction but not stronger ferromagnetic coupling. So the {{{d}}}0 magnetism can probably be explained as a local effect which is incapable of scaling up with the volume.

  11. Excited States of the divacancy in SiC

    Science.gov (United States)

    Bockstedte, Michel; Garratt, Thomas; Ivady, Viktor; Gali, Adam

    2014-03-01

    The divacancy in SiC - a technologically mature material that fulfills the necessary requirements for hosting defect based quantum computing - is a good candidate for implementing a solid state quantum bit. Its ground state is isovalent to the NV center in diamond as demonstrated by density functional theory (DFT). Furthermore, coherent manipulation of divacancy spins in SiC has been demonstrated. The similarities to NV might indicate that the same inter system crossing (ICS) from the high to the low spin state is responsible for its spin-dependent fluorescent signal. By DFT and a DFT-based multi-reference hamiltonian we analyze the excited state spectrum of the defects. In contrast to the current picture of the spin dynamics of the NV center, we predict that a static Jahn-Teller effect in the first excited triplet states governs an ICS both with the excited and ground state of the divacancy.

  12. Evaluation of SiC schottky diodes using pressure contacts

    OpenAIRE

    Ortiz Gonzalez, Jose; Alatise, Olayiwola; Aliyu, Attahir; Rajaguru, Pushparajah; Castellazzi, Alberto; Ran, Li; Mawby, Philip; Bailey, Chris

    2017-01-01

    The thermomechanical reliability of SiC power devices and modules is increasingly becoming of interest especially for high power applications where power cycling performance is critical. Press-pack assemblies are a trusted and reliable packaging solution that has traditionally been used for high power thyristor- based applications in FACTS/HVDC, although press-pack IGBTs have become commercially available more recently. These press-pack IGBTs require anti-parallel PiN diodes for enabling reve...

  13. The influence of precursor structure on the development of porosity in polymer-derived SiC

    Energy Technology Data Exchange (ETDEWEB)

    Nebo, J.F. [Univ. of New Mexico, Albuquerque, NM (United States). Center for Micro-Engineered Ceramics; Scotto, C.S. [Sandia National Labs., Albuquerque, NM (United States). Advanced Materials Lab.; Bennett, C.A. [Univ. of Toledo, OH (United States). Dept. of Chemical Engineering; Brinker, C.J. [Univ. of New Mexico, Albuquerque, NM (United States). Center for Micro-Engineered Ceramics]|[Sandia National Labs., Albuquerque, NM (United States). Advanced Materials Lab.

    1996-07-01

    Polymer-based routes to ceramic oxides take advantage of precursor chemistry and structure to produce materials with a range of pore sizes. Polymer precursor routes to non-oxide ceramics offer products with superior thermal and chemical stability in many cases. Polymethylsilane (PMS), a versatile cross linked SiC precursor, [(MeHSi){sub x}(MeSi){sub y}], was synthesized using published procedures to yield fluid precursors with a low (20--40%) degree of cross linking. Unique, highly cross linked (60--70%), solid polymers were produced under reaction conditions which carefully conserve the volatile monomer. These two polymers were converted to SiC to determine the relative importance of the various contributions to porosity, and to assess the role of precursor structure on porosity development in non-oxides. Initial results indicate that precursor structure has little effect on porosity. The development of the porosity appears to be dominated by high temperature thermochemistry and/or microstructural changes.

  14. Improving breakdown voltage and self-heating effect for SiC LDMOS with double L-shaped buried oxide layers

    Science.gov (United States)

    Bao, Meng-tian; Wang, Ying

    2017-02-01

    In this paper, a SiC LDMOS with double L-shaped buried oxide layers (DL-SiC LDMOS) is investigated and simulated. The DL-SiC LDMOS consists of two L-shaped buried oxide layers and two SiC windows. Using 2-D numerical simulation software, Atlas, Silvaco TCAD, the breakdown voltage, and the self-heating effect are discussed. The double-L shaped buried oxide layers and SiC windows in the active area can introduce an additional electric field peak and make the electric field distribution more uniform in the drift region. In addition, the SiC windows, which connect the active area to the substrate, can facilitate heat dissipation and reduce the maximum lattice temperature of the device. Compared with the BODS structure, the DL-SiC LDMOS and BODS structures have the same device parameters, except of the buried oxide layers. The simulation results of DL-SiC LDMOS exhibits outstanding characteristics including an increase of the breakdown voltage by 32.6% to 1220 V, and a low maximum lattice temperature (535 K) at room temperature.

  15. Atmospheric pressure growth of graphene on SiC(0001)

    Science.gov (United States)

    Seyller, Thomas

    2009-03-01

    Graphene, a single monolayer of sp^2-bonded carbon, is a very unique 2-dimensional electron gas system with electronic properties fundamentally different to other 2DEG systems [1]. Several production routes exist for graphene. Among them, the solid-state decomposition of hexagonal silicon carbide (SiC) surfaces [2] is particularly attractive for the development of graphene based electronics [3,4]. The first part of the presentation gives a brief summary of recent studies on the structural and electronic properties of graphene and few-layer graphene grown on SiC(0001) under ultra-high vacuum (UHV) conditions. The second part of the talk is devoted to recent progress in the growth of large domain graphene films on SiC(0001) in Ar atmosphere. It is shown that growth in Ar ambient leads to a significant improvement of the surface morphology and domain size as well as carrier mobility. [4pt] [1] A.H. Castro Neto, et al., Reviews of Modern Physics, in print (arXiv:0709.1163v2); and references therein. [0pt] [2] A. Charrier, et al., J. Appl. Phys. 92 (2002) 2479. [0pt] [3] C. Berger et al., J. Phys. Chem. B 108 (2004) 19912; C. Berger, et al., Science 312 (2006) 1191. [0pt] [4] A.K. Geim and K.S. Novoselov, Nature Mat. 6 (2007) 183.

  16. A study of SiC decomposition under laser irradiation

    Science.gov (United States)

    Adelmann, B.; Hellmann, R.

    2017-06-01

    In this experimental study we investigate the laser induced thermal decomposition of 4H-Sic under ambient conditions using fiber laser. Using a unique two-color pyrometer setup, we measure the temporal evolution of the temperature in the irradiated zone and determine the decomposition rate for various laser power levels. We find that the temporal evolution of the temperature in the irradiated area exhibits an initial heating phase up to about 1300 K, being characterized by an unaffected SiC surface. Upon an expeditious temperature increase, a decomposition phase follows with temperatures above 1700 K, being accompanied by carbonization of the SiC surface. The decomposed volume depends linearly on the duration of the decomposition phase and increases linearly with laser power. The temperature evaluation of the decomposition speed reveals an Arrhenius-type behavior allowing the calculation of the activation energy for the decomposition under ambient conditions to 613 kJ/mol in the temperature range between 2140 and 2420 K.

  17. Synchronistic preparation of fibre-like SiC and cubic-ZrO{sub 2}/SiC composite from zircon via carbothermal reduction process

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Youguo; Liu, Yangai [School of Materials Science and Technology, China University of Geosciences (Beijing), Beijing 100083 (China); Huang, Zhaohui, E-mail: huang118@cugb.edu.cn [School of Materials Science and Technology, China University of Geosciences (Beijing), Beijing 100083 (China); Fang, Minghao [School of Materials Science and Technology, China University of Geosciences (Beijing), Beijing 100083 (China); Hu, Xiaozhi [School of Mechanical and Chemical Engineering, University of Western Australia, Perth, WA 6009 (Australia); Yin, Li; Huang, Juntong [School of Materials Science and Technology, China University of Geosciences (Beijing), Beijing 100083 (China)

    2013-01-15

    Graphical abstract: Display Omitted Highlights: ► Zircon carbothermal reduction was carried out in a tailor-made device at high-temperature air atmosphere. ► Fibre-like SiC and cubic-ZrO{sub 2}/SiC composite were obtained synchronically. ► Zirconium and silicon in zircon ore was initial separated. ► [SiO{sub 4}] was mutated to fibre-like SiC, while [ZrO{sub 8}] was transformed to cubic ZrO{sub 2}. ► The SiC were surprisingly enriched in the reducing atmosphere charred coal particles layers by gas–solid reaction. -- Abstract: Fibre-like SiC and cubic-ZrO{sub 2}/SiC composite were prepared respectively from zircon with yttrium oxide addition via carbothermal reduction process at 1600 °C for 4 h in an air atmosphere furnace, where the green samples were immerged in charred coal particles inside a high-temperature enclosed corundum crucible. The reaction products were characterized by XRD, XRF, XPS and SEM. The results indicate that ZrO{sub 2} in the products was mainly existed in the form of cubic phase. The reacted samples mainly contain cubic ZrO{sub 2}, β-SiC and trace amounts of zircon, with the SiC accounting for 14.8 wt%. Furthermore, a large quantity of fibre-like SiC was surprisingly found to concentrate in the charred coal particles layers around the samples. This study obtains fibre-like SiC and cubic-ZrO{sub 2}/SiC composite synchronically from zircon via carbothermal reduction process, which also bring a value-added high-performance application for natural zircon.

  18. Low-energy SiC2H6+ and SiC3H9+ ion beam productions by the mass-selection of fragments produced from hexamethyldisilane for SiC film formations

    Directory of Open Access Journals (Sweden)

    Satoru Yoshimura

    2016-12-01

    Full Text Available We have been attempting to produce low-energy ion beams from fragments produced through the decomposition of hexamethyldisilane (HMD for silicon carbide (SiC film formations. We mass-selected SiC2H6+ and SiC3H9+ ions from fragments produced from HMD, and finally produced low-energy SiC2H6+ and SiC3H9+ ion beams. The ion energy was approximately 100 eV. Then, the ion beams were irradiated to Si(100 substrates. The temperature of the Si substrate was 800°C during the ion irradiation. The X-ray diffraction and Raman spectroscopy of the substrates obtained following SiC2H6+ ion irradiation demonstrated the occurrence of 3C-SiC deposition. On the other hand, the film deposited by the irradiation of SiC3H9+ ions included diamond-like carbon in addition to 3C-SiC.

  19. A Light-Activated SiC Darlington Transistor Using SiCGe as Base Layer

    Institute of Scientific and Technical Information of China (English)

    CHEN Zhi-Ming(陈治明); PU Hong-Bin(蒲红斌); Fred R.BEYETTE Jr

    2003-01-01

    If a Darlington transistor is triggered by the photocurrent output from an individual photodiode, the electromagnetic interference (EMI) problem may still exist because the direct input of the Darlington is an actually electronic signal To eliminate the EMI problem completely, we propose an absolutely light-activated Darlington transistor made of SiC, in which p-SiCGe/n-SiC heterojunction is employed to produce a base current by means of optical illumination. Performance of the novel light-activated power switch was simulated using MEDICI tools,which has shown that the light-activated device has very good switching characteristics especially for a triggering light intensity greater than 0.23 W/cm2. For a relatively weak light, the device can be switched to the ON state only for a higher bias voltage.

  20. Optimization of Thermal Neutron Converter in SiC Sensors for Spectral Radiation Measurements

    Energy Technology Data Exchange (ETDEWEB)

    Krolikowski, Igor; Cetnar, Jerzy [Department of Nuclear Energy, Faculty of Energy and Fuels at AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Cracow (Poland); Issa, Fatima; Ferrone, Raffaello; Ottaviani, Laurent [IM2NP, UMR CNRS 7334, Aix-Marseille University, Case 231, 13397 Marseille Cedex 20 (France); Szalkai, Dora; Klix, Axel [KIT- Karlsruhe Institute of Technology, Institute of Neutron Physics and Reactor Technology, Karlsruhe 76344 (Germany); Vermeeren, Ludo [SCK-CEN, Boeretang 200, B-2400 Mol (Belgium); Lyoussi, Abdalla [CEA, DEN, DER, Instrumentation Sensors and Dosimetry Laboratory, Cadarache, F-13108 St-Paul-Lez-Durance (France); Saenger, Richard [Etudes et Productions Schlumberger, Clamart (France)

    2015-07-01

    Optimization of the neutron converter in SiC sensors is presented. The sensors are used for spectral radiation measurements of thermal and fast neutrons and optionally gamma ray at elevated temperature in harsh radiation environment. The neutron converter, which is based on 10B, allows to detect thermal neutrons by means of neutron capture reaction. Two construction of the sensors were used to measure radiation in experiments. Sensor responses collected in experiments have been reproduced by the computer tool created by authors, it allows to validate the tool. The tool creates the response matrix function describing the characteristic of the sensors and it was used for detailed analyses of the sensor responses. Obtained results help to optimize the neutron converter in order to increase thermal neutron detection. Several enhanced construction of the sensors, which includes the neutron converter based on {sup 10}B or {sup 6}Li, were proposed. (authors)

  1. Vertically cross-linked and porous CoNi2S4 nanosheets-decorated SiC nanowires with exceptional capacitive performance as a free-standing electrode for asymmetric supercapacitors

    Science.gov (United States)

    Zhao, Jian; Li, Zhenjiang; Zhang, Meng; Meng, Alan; Li, Qingdang

    2016-11-01

    In this paper, a simple, low-cost and mild hydrothermal technology of growing vertically cross-linked ternary nickel cobalt sulfides nanosheets (CoNi2S4 NSs) with porous characteristics on SiC nanowires (SiC NWs) supporters with outstanding resistances to oxidation and corrosion, good conductivity and large specific surface area deposited directly on carbon cloth (CC) is successfully developed, forming a new family of free-standing advanced hybrid electrode for asymmetric supercapacitors (ASCs). Such integrated electrode (SiC NWs@CoNi2S4 NSs) manifests intriguing electrochemical characteristics such as high specific capacity (231.1 mA h g-1 at 2 A g-1) and rate capability due to the synergistic effect of SiC NWs and CoNi2S4 NSs with unique morphology. Additionally, an asymmetric supercapacitor is also assembled via using this special hybrid architectures as positive electrode and activated carbon (AC) on Ni foam (NF) as negative electrode, and it can yield a high energy density of 57.8 W h kg-1 with a power density of 1.6 kW kg-1 and long cycling lifespan. This study constitutes an emerging attractive strategy to reasonably design and fabricate novel SiC NWs-based nanostructured electrodes with enhanced capacity, which holds great potential to be the candidate of electrode materials for environmentally benign as well as high-performance energy storage devices.

  2. Tribological Performance and Lubrication Mechanism of Alkylimidazolium Dialkyl Phosphates Ionic Liquids as Lubricants for Si3N4-Ti3SiC2 Contacts

    Directory of Open Access Journals (Sweden)

    Hai-zhong Wang

    2014-01-01

    Full Text Available The tribological performance of Si3N4-Ti3SiC2 contacts lubricated by alkylimidazolium dialkyl phosphates ionic liquids (ILs was investigated using an Optimol SRV-IV oscillating reciprocating friction and wear tester at room temperature (25°C and 100°C. Glycerol and tributyl phosphate (TBP were also selected as lubricants for Si3N4-Ti3SiC2 contacts to study the tribological properties under the same experimental conditions for comparison. Results show that the alkylimidazolium dialkyl phosphates ILs were effective in reducing the friction and wear for Si3N4-Ti3SiC2contacts, and their performance is superior to that of glycerol and TBP. The SEM/EDS and XPS results reveal that the excellent tribological endurance of alkylimidazolium dialkyl phosphates ILs is mainly attributed to the high load-carrying capacity of the ILs and the formation of surface protective films consisting of TiO2, SiOx, titanium phosphate, amines, and nitrogen oxides by the tribochemical reactions.

  3. FTIR-ATR analysis of SiC(000 anti 1) and SiC(0001) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tsuchida, H.; Kamata, I.; Izumi, K. [Central Research Inst. of Electric Power Industry, Yokosuka (Japan)

    1998-06-01

    Recently developed SiC wafers with large diameter have been utilized to investigate the chemical state of the SiC surfaces by Fourier-transformed infrared attenuated total reflection (FTIR-ATR) spectroscopy with high sensitivity. The ex-situ ATR spectroscopy equipped with a Ge prism was used to study the chemisorbed species on 6H-SiC(000 anti 1) and (0001) surface after the chemical treatment and after the heat treatment in hydrogen. We obtained clear absorption bands attributable to hydrides on the surfaces. The polarity dependencies of Si-H and C-H stretch modes between the 6H-SiC(000 anti 1) and (0001) were discussed. (orig.) 10 refs.

  4. Adsorption of formaldehyde (HCOH) molecule on the SiC sheet: A first-principles study

    Science.gov (United States)

    Wang, Lizhi

    2012-06-01

    We investigated the adsorption of HCOH molecule on the SiC sheet using density functional theory (DFT) calculations. It is found that the C atom of the SiC sheet is the active adsorption site and the HCOH molecule prefers to the C atom rather than the O and H atoms close to the SiC sheet. The calculated charge-transfer, electronic density difference image and the densities of states (DOS) show that the HCOH molecule could be firmly adsorbed by the SiC sheet and the electronic properties of the SiC sheet are affected by the adsorption of HCOH molecule. The SiC sheet would be promising candidate to detect the HCOH gas.

  5. Effect of oxygen content on tensile strength of polymer-derived SiC fibers

    Institute of Scientific and Technical Information of China (English)

    楚增勇; 冯春祥; 宋永才; 王应德; 李效东; 肖加余

    2002-01-01

    Air-curing is usually applied to the polymer-derived SiC fibers and, as a result, oxygen is embedded to the material. An effective relationship between oxygen content of the SiC fibers and mass gain of their precursor fibers was established. Results also showed that oxygen content has a great influence on the mechanical properties and excellent tensile strength is usually obtained at the oxygen content of 12%~13%, similar to the density of SiC fibers. Oxygen content has a positive effect on the ceramic yield, and thus, is good to the density and tensile strength; while, oxygen content is also negative to volume content of SiC phase and crystallization of the SiC fibers, and thus, detrimental to the density and tensile strength. Both of the two effects result in the peak behavior of the tensile strength of SiC fibers.

  6. A Method to Adjust Dielectric Property of SiC Powder in the GHz Range

    Institute of Scientific and Technical Information of China (English)

    Xiaolei Su; Jie Xu; Zhimin Li; Junbo Wang; Xinhai He; Chong Fu; Wancheng Zhou

    2011-01-01

    The SiC powders by Al or N doping have been synthesized by combustion synthesis, using Al powder and NH4Cl powder as the dopants and polytetrafluoroethylene as the chemical activator. Characterization by X-ray diffraction, Raman spectrometer, scanning electron microscopy and energy dispersive spectrometer demonstrates the formation of Al doped SiC, N doped SiC and the Al and N co-doped SiC solid solution powders, respectively. The electric permittivities of prepared powders have been determined in the frequency range of 8.2-12.4 GHz. It indicates that the electric permittivities of the prepared SiC powders have been improved by the pure Al or N doping and decrease by the Al and N co-doping. The paper presents a method to adjust dielectric property of SiC powders in the GHz range.

  7. SEM analysis of ion implanted SiC

    Energy Technology Data Exchange (ETDEWEB)

    Malherbe, Johan B., E-mail: johan.malherbe@up.ac.za [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Berg, N.G. van der; Botha, A.J.; Friedland, E.; Hlatshwayo, T.T.; Kuhudzai, R.J. [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Wendler, E.; Wesch, W. [Institut für Festkörperphysik, Friedrich-Schiller-Universität, 07743 Jena (Germany); Chakraborty, P. [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Silveira, E.F. da [Physics Department, Pontifícia Universidade Católica do Rio de Janeiro, Rio de Janeiro (Brazil)

    2013-11-15

    SiC is a material used in two future energy production technologies, firstly as a photovoltaic layer to harness the UV spectrum in high efficient power solar cells, and secondly as a diffusion barrier material for radioactive fission products in the fuel elements of the next generation of nuclear power plants. For both applications, there is an interest in the implantation of reactive and non-reactive ions into SiC and their effects on the properties of the SiC. In this study 360 keV Ag{sup +}, I{sup +} and Xe{sup +} ions were separately implanted into 6H–SiC and in polycrystalline SiC at various substrate temperatures. The implanted samples were also annealed in vacuum at temperatures ranging from 900 °C to 1600 °C for various times. In recent years, there had been significant advances in scanning electron microscopy (SEM) with the introduction of an in-lens detector combined with field emission electron guns. This allows defects in solids, such as radiation damage created by the implanted ions, to be detected with SEM. Cross-sectional SEM images of 6H–SiC wafers implanted with 360 keV Ag{sup +} ions at room temperature and at 600 °C and then vacuum annealed at different temperatures revealed the implanted layers and their thicknesses. A similar result is shown of 360 keV I{sup +} ions implanted at 600 °C into 6H–SiC and annealed at 1600 °C. The 6H–SiC is not amorphized but remained crystalline when implanting at 600 °C. There are differences in the microstructure of 6H–SiC implanted with silver at the two temperatures as well as with reactive iodine ions. Voids (bubbles) are created in the implanted layers into which the precipitation of silver and iodine can occur after annealing of the samples. The crystallinity of the substrate via implantation temperature caused differences in the distribution and size of the voids. Implantation of xenon ions in polycrystalline SiC at 350 °C does not amorphize the substrate as is the case with room

  8. SiC Optically Modulated Field-Effect Transistor

    Science.gov (United States)

    Tabib-Azar, Massood

    2009-01-01

    An optically modulated field-effect transistor (OFET) based on a silicon carbide junction field-effect transistor (JFET) is under study as, potentially, a prototype of devices that could be useful for detecting ultraviolet light. The SiC OFET is an experimental device that is one of several devices, including commercial and experimental photodiodes, that were initially evaluated as detectors of ultraviolet light from combustion and that could be incorporated into SiC integrated circuits to be designed to function as combustion sensors. The ultraviolet-detection sensitivity of the photodiodes was found to be less than desired, such that it would be necessary to process their outputs using high-gain amplification circuitry. On the other hand, in principle, the function of the OFET could be characterized as a combination of detection and amplification. In effect, its sensitivity could be considerably greater than that of a photodiode, such that the need for amplification external to the photodetector could be reduced or eliminated. The experimental SiC OFET was made by processes similar to JFET-fabrication processes developed at Glenn Research Center. The gate of the OFET is very long, wide, and thin, relative to the gates of typical prior SiC JFETs. Unlike in prior SiC FETs, the gate is almost completely transparent to near-ultraviolet and visible light. More specifically: The OFET includes a p+ gate layer less than 1/4 m thick, through which photons can be transported efficiently to the p+/p body interface. The gate is relatively long and wide (about 0.5 by 0.5 mm), such that holes generated at the body interface form a depletion layer that modulates the conductivity of the channel between the drain and the source. The exact physical mechanism of modulation of conductivity is a subject of continuing research. It is known that injection of minority charge carriers (in this case, holes) at the interface exerts a strong effect on the channel, resulting in amplification

  9. 9 kV, 1 cm x 1 cm SiC Super GTO Technology Development For Pulse Power

    Science.gov (United States)

    2009-06-01

    capacitor C1, and inductor, L1. C1 consists of 60 Electronics Power Ring polypropylene capacitors . L1 is a single turn inductor providing a total circuit...Characteristics The schematic circuit diagram for turn measurements is shown in Figure 9 with a load resistor of 10 Ω and a capacitor of 3 µF...PiN diode, D1, with snubber capacitor and resistor, a CREE 6 kV, 0.25 cm 2 SiC PiN antiparallel diode, a series resonant circuit composed of

  10. Enhancement of electric field properties of Pt/nanoplatelet MoO{sub 3}/SiC Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Yu, J; Shafiei, M; Wlodarski, W; Kalantar-zadeh, K [Sensor Technology Laboratory, School of Electrical and Computer Engineering, RMIT University, Melbourne (Australia); Li, Y X, E-mail: j.yu@student.rmit.edu.a [Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai (China)

    2010-01-20

    A comprehensive investigation of the electric field enhancement on a novel reverse biased Schottky contact induced by nanoplateleted morphology is presented. The phenomenon that causes the enhancement of the electric field in nanoplatelets is discussed and the equations describing it are derived. Pt/nanoplatelet MoO{sub 3}/SiC Schottky diode based devices are fabricated to show the dependence of the current voltage (I-V) characteristics to the enhanced electric field at different temperatures. The devices are used as sensors as they were exposed to 1% hydrogen (H{sub 2}) gas to show the effect of free carrier density change.

  11. Strength and conductivity of unidirectional copper composites reinforced by continuous SiC fibers

    Science.gov (United States)

    Kimmig, S.; Allen, I.; You, J. H.

    2013-09-01

    A SiC long fiber-reinforced copper composite offers a beneficial combination of high strength and high thermal conductivity at elevated temperatures. Both properties make the composite a promising material for the heat sink of high-heat-flux components. In this work, we developed a novel Cu/SiCf composite using the Sigma fiber. Based on HIP technique, a metallurgical process was established for fabricating high quality specimens using a TiC interface coating. Extensive tensile tests were conducted on the unidirectionally reinforced composite at 20 °C and 300 °C for a wide range of fiber volume fraction (Vf). In this paper, a large amount of test data is presented. The transversal thermal conductivity varies from 260 to 130 W/mK at 500 °C as Vf is increased from 13% to 37%. The tensile strength reached up to 1246 MPa at 20 °C for Vf = 37.6%, where the fracture strain was limited to 0.8%. The data of both elastic modulus and ultimate strength exhibited a good agreement with the rule-of-mixture predictions indicating a high quality of the materials. The strength of the composite with the Sigma fibers turned out to be superior to those of the SCS6 fibers at 300 °C, although the SCS6 fiber actually has a higher strength than the Sigma fiber. The fractographic pictures of tension test and fiber push-out test manifested a sufficient interfacial bonding. Unidirectional copper composite reinforced by long SiC fibers was fabricated using the Sigma SM1140+ fiber for a wide range of fiber volume fraction from 14% to 40%. Extensive tensile tests were carried out at RT and 300 °C. The data of ultimate strength as well as elastic modulus exhibited a good agreement with the rule-of-mixture predictions indicating a high quality of the materials. In terms of the tensile strength, the Cu/Sigma composite turned out to be superior to the previous Cu/SCS6 composite at 300 °C, while comparable at RT, although the SCS6 fiber has a higher strength than the Sigma fiber. Such a

  12. 75 FR 28542 - Superior Resource Advisory Committee

    Science.gov (United States)

    2010-05-21

    ... orient the new Superior Resource Advisory Committee members on their roles and responsibilities. DATES... of the roles and responsibilities of the Superior Resource Advisory Committee members; Election of... Forest Service Superior Resource Advisory Committee AGENCY: Forest Service, USDA. ACTION: Notice...

  13. [The superior laryngeal nerve and the superior laryngeal artery].

    Science.gov (United States)

    Lang, J; Nachbaur, S; Fischer, K; Vogel, E

    1987-01-01

    Length, diameter and anastomoses of the nervus vagus and its ganglion inferius were measured 44 halved heads. On the average, 8.65 fiber bundles of the vagus nerve leave the retro-olivary area. In the area of the jugular foramen is the near superior ganglion of the 10th cranial nerve. In this area were found 1.48 (mean value) anastomoses with the 9th cranial nerve. 11.34 mm below the margo terminalis sigmoidea branches off the ramus internus of the accessory nerve which has a length of 9.75 mm. Further anastomoses with the 10th cranial nerve were found. The inferior ganglion of the 10th nerve had a length of 25.47 mm and a diameter of 3.46 mm. Five mm below the ganglion the 10th nerve had a width of 2.9 and a thickness of 1.5 mm. The mean length of the superior sympathetic ganglion was 26.6 mm, its width 7.2 and its thickness 3.4 mm. In nearly all specimens anastomoses of the superior sympathetic ganglion with the ansa cervicalis profunda and the inferior ganglion of the 10th cranial nerve were found. The superior laryngeal nerve branches off about 36 mm below the margo terminalis sigmoidea. The width of this nerve was 1.9 mm, its thickness 0.8 mm on the right and 1.0 mm on the left side. The division in the internal and external rami was found about 21 mm below its origin. Between the n. vagus and thyreohyoid membrane the ramus internus had a length of 64 mm, the length of external ramus between the vagal nerve and the inferior pharyngeal constrictor muscle was 89 mm. Its mean length below the thyreopharyngeal part was 10.7 mm, 8.6 branchlets to the cricothyroid muscle were counted. The superior laryngeal artery had its origin in 80% of cases in the superior thyroideal artery, in 6.8% this vessel was a branch of the external carotid artery. Its average outer diameter was 1.23 mm on the right side and 1.39 mm on the left. The length of this vessel between its origin and the thyreohyoid membrane was 34 mm. In 7% on the right side and in 13% on the left, the superior

  14. Review of data on irradiation creep of monolithic SiC

    Energy Technology Data Exchange (ETDEWEB)

    Garner, F.A.; Youngblood, G.E.; Hamilton, M.L. [Pacific Northwest National Laboratory, Richland, WA (United States)

    1996-04-01

    An effort is now underway to design an irradiation creep experiment involving SiC composites to SiC fibers. In order to successfully design such an experiment, it is necessary to review and assess the available data for monolithic SiC to establish the possible bounds of creep behavior for the composite. The data available show that monolithic SiC will indeed creep at a higher rate under irradiation compared to that of thermal creep, and surprisingly, it will do so in a temperature-dependant manner that is typical of metals.

  15. New Possibilities of Power Electronic Structures Using SiC Technology

    OpenAIRE

    2006-01-01

    This paper is dedicated to the recent unprecedented boom of SiC electronic technology. The contribution deals with brief survey of those properties. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are given for several large-scale applications on the end of the contribution. The basic properties of SiC material have been discussed already on the begin...

  16. Fabrication and Measurements of Hoop Strength of a Multi-Layered SiC Composite

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Daejong; Lee, Jongmin; Kim, Weon Ju; Park, Ji Yeon [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-10-15

    In this study, the influence of the winding patterns of the SiC fiber on the fiber volume fraction and hoop strength were investigated. Silicon carbide has a low neutron absorption cross section, a high melting point, and low chemical interaction, making it possible to use as fuel cladding in light water reactors. A multi-layered SiC composite tube as the LWR fuel cladding is composed of the monolith SiC inner layer, SiC/SiC composite intermediate layer, and monolith SiC outer layer.

  17. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Annual Report

    Energy Technology Data Exchange (ETDEWEB)

    Henager, Charles H. [pnnl; Alvine, Kyle J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Roosendaal, Timothy J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Shin, Yongsoon [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Nguyen, Ba Nghiep; Borlaug, Brennan A. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Jiang, Weilin [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Arreguin, Shelly A. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2015-01-15

    A new dual-phase nanocomposite of Ti₃SiC₂/SiC is being synthesized using preceramic polymers, ceramic powders, and carbon nanotubes (CNTs) designed to be suitable for advanced nuclear reactors and perhaps as fuel cladding. The material is being designed to have superior fracture toughness compared to SiC, adequate thermal conductivity, and higher density than SiC/SiC composites. This annual report summarizes the progress towards this goal and reports progress in understanding certain aspects of the material behavior but some shortcomings in achieving full density or in achieving adequate incorporation of CNTs. The measured thermal conductivity is adequate and falls into an expected range based on SiC and Ti₃SiC₂. Part of this study makes an initial assessment for Ti₃SiC₂ as a barrier to fission product transport. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti₃SiC₂, SiC, and a synthesized at PNNL. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti₃SiC₂ occurs during ion implantation at 873 K. Cs in Ti₃SiC₂ is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti₃SiC₂ as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Progress is reported in thermal conductivity modeling of SiC-based materials that is relevant to this research, as is progress in modeling the effects of CNTs on fracture strength of SiC-based materials.

  18. Small Incision Cataract Surgery (SICS with Clear Corneal Incision and SICS with Scleral Incision – A Comparative Study

    Directory of Open Access Journals (Sweden)

    Md Shafiqul Alam

    2014-01-01

    Full Text Available Background: Age related cataract is the leading cause of blindness and visual impairment throughout the world. With the advent of microsurgical facilities simple cataract extraction surgery has been replaced by small incision cataract surgery (SICS with posterior chamber intra ocular lens implant, which can be done either with clear corneal incision or scleral incision. Objective: To compare the post operative visual outcome in these two procedures of cataract surgery. Materials and method: This comparative study was carried out in the department of Ophthalmology, Delta Medical College & Hospital, Dhaka, Bangladesh, during the period of January 2010 to December 2012. Total 60 subjects indicated for age related cataract surgery irrespective of sex with the age range of 40-80 years with predefined inclusion and exclusion criteria were enrolled in the study. Subjects were randomly and equally distributed in 2 groups; Group A for SICS with clear corneal incision and group B for SICS with scleral incision. Post operative visual out come was evaluated by determining visual acuity and astigmatism in different occasions and was compared between groups. Statistical analysis was done by SPSS for windows version12. Results: The highest age incidence (43.3% was found between 61 to 70 years of age group. Among study subjects 40 were male and 20 were female. Preoperative visual acuity and astigmatism were evenly distributed between groups. Regarding postoperative unaided visual outcome, 6/12 or better visual acuity was found in 19.98% cases in group A and 39.6% cases in group B at 1st week. At 6th week 6/6 vision was found in 36.3% in Group A and 56.1% in Group B and 46.2% in group A and 66% in group B without and with correction respectively. With refractive correction, 6/6 vision was attained in 60% subjects of group A and 86.67% of group B at 8th week. Post operative visual acuity was statistically significant in all occasions. Postoperative astigmatism of

  19. Microplastic flow in SIC/AL composites

    Energy Technology Data Exchange (ETDEWEB)

    Shi, N. [Los Alamos National Lab., NM (United States); Arsenault, R.J. [Univ. of Maryland, College Park, MD (United States)

    1995-12-31

    Experimentally it has been determined that if a composite containing a reinforcement which has a different (in general lower) thermal coefficient of expansion as compared to the matrix, then upon cooling from the processing or annealing temperature, plastic relaxation of the misfit strain will occur. Also, experimentally it has been shown that as the size of the reinforcement is increased, i.e., from small spheres to large spheres, there is a decrease in the summation of the effective plastic strain in the matrix. In other words there is a decrease in the average dislocation density in the matrix. However, if the shape of the reinforcement is changed from spherical to short fiber to continuous filament, then the dislocation density increases. This experimental data is obtained at a constant volume fraction. A very simple model of plastic relaxation based on prismatic punching of dislocations from the interface can account for the decrease in the dislocation density with an increase reinforcement size, and the increase in dislocation density when changing the shape from a sphere to a continuous filament. A FEM analysis of the shape factor is also capable of predicting the correct trend. However, at present the continuum mechanics methods that have been investigated can not predict the size dependence. A simple model to explain the size effect in Al{sub 2}O{sub 3}/NiAl composites based on the deformation characteristics of NiAl will be discussed.

  20. Multi-response optimization of process parameters using Taguchi method and grey relational analysis during turning AA 7075/SiC composite in dry and spray cooling environments

    OpenAIRE

    Mishra, P. C.; D. K. Das; M. Ukamanal; B. C. Routara; Sahoo, A.K.

    2015-01-01

    Turning experiments were carried out on AA 7075/SiC composite workpiece in dry and spray cooling environments based on L16 Taguchi design of experiments. Multiple performance optimization of process parameters was performed using grey relational analysis. The performance characteristics considered were average surface roughness, cutting tool temperature and material removal rate. Uncoated carbide inserts were used for machining the workpiece in a high speed precision lathe. A grey relational ...

  1. Metallographic Characteristics of Stainless Steel Overlay Weld with Resistance to Hydrogen-Induced Disbonding : Study on a Stainless Steel Overlay Welding Process for Superior Resistance to Disbonding (Report 3)

    OpenAIRE

    Akiyoshi, FUJI; Etsuo, KUDO; Tomoyuki, TAKAHASHI; The Japan Steel Works, Ltd., Muroran Plant

    1986-01-01

    The metallographic characteristics of the disbanding resistant stainless steel overlay weld were studied and compared with those of the conventional overlay weld. It was found that the first layer overlay weld metal of the disbanding resistant overlay weld consisted of austenite and martensite after regular post-weld heat treatment. A coarse planar grain, which strongly affects the disbanding resistance of over-lay welds, scarcely existed in the disbanding resistant overlay weld. A higher wel...

  2. What are Millian Qualitative Superiorities?

    Directory of Open Access Journals (Sweden)

    Jonathan Riley

    2008-04-01

    Full Text Available In an article published in Prolegomena 2006, Christoph Schmidt-Petri has defended his interpretation and attacked mine of Mill’s idea that higher kinds of pleasure are superior in quality to lower kinds, regardless of quantity. Millian qualitative superiorities as I understand them are infinite superiorities. In this paper, I clarify my interpretation and show how Schmidt-Petri has misrepresented it and ignored the obvious textual support for it. As a result, he fails to understand how genuine Millian qualitative superiorities determine the novel structure of Mill’s pluralistic utilitarianism, in which a social code of justice that distributes equal rights and duties takes absolute priority over competing considerations. Schmidt-Petri’s own interpretation is a non-starter, because it does noteven recognize that Mill is talking about different kinds of pleasant feelings, such that the higher kinds are intrinsically more valuable than the lower. I conclude by outlining why my interpretation is free of any metaphysical commitment to the “essence” of pleasure.

  3. Isolated superior mesenteric artery dissection

    Directory of Open Access Journals (Sweden)

    Lalitha Palle

    2010-01-01

    Full Text Available Isolated superior mesenteric artery (SMA dissection without involvement of the aorta and the SMA origin is unusual. We present a case of an elderly gentleman who had chronic abdominal pain, worse after meals. CT angiography, performed on a 64-slice CT scanner, revealed SMA dissection with a thrombus. A large artery of Drummond was also seen. The patient was managed conservatively.

  4. The effect of structural defects in SiC particles on the static & dynamic mechanical response of a 15 volume percent SiC/6061-Al matrix composite

    Energy Technology Data Exchange (ETDEWEB)

    Vaidya, R.U.; Song, S.G.; Zurek, A.K.; Gray, G.T. III

    1995-09-01

    Static and Dynamic mechanical tests, and microstructural examinations performed on a SiC particle reinforced 6061-Al matrix composite indicated that particle cracking significantly affected the strength, strain hardening, and failure mechanism of the composite. Cracks were observed to nucleate and propagate on stacking faults and interfaces between the various phases within the reinforcing SiC particles. Planar defects were the predominant artifacts seen in the SiC particles. Partial dislocations were also observed bounding the stacking faults within the reinforcement phase.

  5. Estudio de la protección del refuerzo de partículas de SiC mediante barreras activas por sol-gel en materiales compuestos de matriz de aluminio

    Directory of Open Access Journals (Sweden)

    Ureña, A.

    2004-04-01

    Full Text Available A microcrystalline, homogeneous and transparent sol – gel silica coating has been developed to avoid the degradation and improve the wettability of aluminium matrix composites reinforced with SiC particles. Composite aluminium matrix samples have been made by cold powder compaction, and the coating efficiency has been checked by melting the samples several temperature and times. The coating reduces the appearance of Al4C3, showing that the degradation resistance of the new material is much higher than that of the uncovered SiC particles composite one.

    Con objeto de prevenir la degradación y mejorar la mojabilidad de los materiales compuestos de matriz de aluminio reforzados con partículas de SiC se ha desarrollado un recubrimiento microcristalino, homogéneo y transparente de SiO2 obtenido por el método sol-gel. La eficacia del recubrimiento como barrera se ha comprobado realizando ensayos de fusión a diferentes tiempos y temperaturas sobre pastillas de material compuesto de matriz de aluminio obtenidas por compactación en frío de polvos. El recubrimiento limita la formación de Al4C3, lo que indica que la resistencia a la degradación del nuevo material es muy superior a la del fabricado con partículas de SiC sin recubrir.

  6. A escrita no Ensino Superior

    Directory of Open Access Journals (Sweden)

    Maria Conceição Pillon Christofoli

    2013-01-01

    Full Text Available http://dx.doi.org/10.5902/198464445865 O presente artigo trata de apresentar resultados oriundos de pesquisa realizada no Ensino Superior, enfocando a escrita em contextos universitários. Depoimentos por parte dos acadêmicos evidenciam certa resistência ao ato de escrever, o que acaba muitas vezes distanciando o sujeito da produção de um texto. Assim sendo, mesmo que parciais, os resultados até então analisados dão conta de que: pressuposto 1 – há ruptura da ideia de coerência entre o que pensamos, o que conseguimos escrever, o que entende nosso interlocutor; pressuposto 2 – a autocorreção de textos como exercício de pesquisa é imprescindível para a qualificação da escrita; pressuposto 3 – os diários de aula representam rico instrumento para a qualificação da escrita no Ensino Superior; pressuposto 4 – há necessidade de que o aluno do Ensino Superior escreva variados tipos de escrita, ainda que a universidade cumpra com seu papel, enfatizando a escrita acadêmica; pressuposto 5 – o trabalho com a escrita no Ensino Superior deve enfatizar os componentes básicos da expressão escrita: o código escrito e a composição da escrita. Palavras-chave: Escrita; Ensino Superior; formação de professores.

  7. Low Activation Joining of SiC/SiC Composites for Fusion Applications: Modeling Thermal and Irradiation-induced Swelling Effects on Integrity of Ti3SiC2/SiC Joint

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.; Ferraris, M.; Katoh, Yutai

    2017-03-31

    This work developed a continuum damage mechanics model that incorporates thermal expansion combined with irradiation-induced swelling effects to study the origin of cracking observed in recent irradiation experiments. Micromechanical modeling using an Eshelby-Mori-Tanaka approach was used to compute the thermoelastic properties of the Ti3SiC2/SiC joint needed for the model. In addition, a microstructural dual-phase Ti3SiC2/SiC model was developed to determine irradiation-induced swelling of the composite joint at a given temperature resulting from differential swelling of SiC and the Ti3SiC2 MAX phase. Three cases for the miniature torsion hourglass (THG) specimens containing a Ti3SiC2/SiC joint were analyzed corresponding to three irradiation temperatures: 800oC, 500oC, and 400oC.

  8. TCAD simulation for alpha-particle spectroscopy using SIC Schottky diode.

    Science.gov (United States)

    Das, Achintya; Duttagupta, Siddhartha P

    2015-12-01

    There is a growing requirement of alpha spectroscopy in the fields context of environmental radioactive contamination, nuclear waste management, site decommissioning and decontamination. Although silicon-based alpha-particle detection technology is mature, high leakage current, low displacement threshold and radiation hardness limits the operation of the detector in harsh environments. Silicon carbide (SiC) is considered to be excellent material for radiation detection application due to its high band gap, high displacement threshold and high thermal conductivity. In this report, an alpha-particle-induced electron-hole pair generation model for a reverse-biased n-type SiC Schottky diode has been proposed and verified using technology computer aided design (TCAD) simulations. First, the forward-biased I-V characteristics were studied to determine the diode ideality factor and compared with published experimental data. The ideality factor was found to be in the range of 1.4-1.7 for a corresponding temperature range of 300-500 K. Next, the energy-dependent, alpha-particle-induced EHP generation model parameters were optimised using transport of ions in matter (TRIM) simulation. Finally, the transient pulses generated due to alpha-particle bombardment were analysed for (1) different diode temperatures (300-500 K), (2) different incident alpha-particle energies (1-5 MeV), (3) different reverse bias voltages of the 4H-SiC-based Schottky diode (-50 to -250 V) and (4) different angles of incidence of the alpha particle (0°-70°).The above model can be extended to other (wide band-gap semiconductor) device technologies useful for radiation-sensing application. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  9. Feasibility study of a SiC sandwich neutron spectrometer

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Jian, E-mail: caepwujian@163.com [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Lei, Jiarong, E-mail: jiarong_lei@163.com [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Jiang, Yong; Chen, Yu; Rong, Ru; Zou, Dehui; Fan, Xiaoqiang [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Chen, Gang; Li, Li; Bai, Song [Nanjing Electronic Devices Institute, Nanjing 210016 (China)

    2013-04-21

    Semiconductor sandwich neutron spectrometers are suitable for in-pile measurements of fast reactor spectra thanks to their compact and relatively simple design. We have assembled and tested a sandwich neutron spectrometer based on 4H-silicon carbide (4H-SiC) Schottky diodes. The SiC diodes detect neutrons via neutron-induced charged particles (tritons and alpha particles) produced by {sup 6}Li(n,α){sup 3}H reaction. {sup 6}LiF neutron converter layers are deposited on the front surface of Schottky diodes by magnetron sputtering. The responses of SiC diodes to charged particles were investigated with an {sup 241}Am alpha source. A sandwich neutron spectrometer was assembled with two SiC Schottky diodes selected based on the charged-particle-response experimental results. The low-energy neutron response of the sandwich spectrometer was measured in the neutron field of the Chinese Fast Burst Reactor-II (CFBR-II). Spectra of alpha particles and tritons from {sup 6}Li(n,α){sup 3}H reaction were obtained with two well-resolved peaks. The energy resolution of the sum spectrum was 8.8%. The primary experimental results confirmed the 4H-SiC sandwich neutron spectrometer's feasibility. -- Highlights: ► Sandwich neutron spectrometer employing 4H-SiC as a detecting material has been developed for the first time. ► {sup 6}LiF neutron converter has been deposited on the surface of 4H-SiC Schottky diode. ► Preliminary testing results obtained with the 4H-SiC sandwich neutron spectrometer are presented.

  10. Ultra High Temperature (UHT) SiC Fiber (Phase 2)

    Science.gov (United States)

    Dicarlo, James A.; Jacobson, Nathan S.; Lizcano, Maricela; Bhatt, Ramakrishna T.

    2015-01-01

    Silicon-carbide fiber-reinforced silicon-carbide ceramic matrix composites (SiCSiC CMC) are emerginglightweight re-usable structural materials not only for hot section components in gas turbine engines, but also for controlsurfaces and leading edges of reusable hypersonic vehicles as well as for nuclear propulsion and reactor components. Ithas been shown that when these CMC are employed in engine hot-section components, the higher the upper usetemperature (UUT) of the SiC fiber, the more performance benefits are accrued, such as higher operating temperatures,reduced component cooling air, reduced fuel consumption, and reduced emissions. The first generation of SiCSiC CMC with a temperature capability of 2200-2400F are on the verge of being introduced into the hot-section components ofcommercial and military gas turbine engines.Today the SiC fiber type currently recognized as the worlds best in terms ofthermo-mechanical performance is the Sylramic-iBN fiber. This fiber was previously developed by the PI at NASA GRC using patented processes to improve the high-cost commercial Sylramic fiber, which in turn was derived from anotherlow-cost low-performance commercial fiber. Although the Sylramic-iBN fiber shows state-of-the art creep and rupture resistance for use temperatures above 2550oF, NASA has shown by fundamental creep studies and model developmentthat its microstructure and creep resistance could theoretically be significantly improved to produce an Ultra HighTemperature (UHT) SiC fiber.This Phase II Seedling Fund effort has been focused on the key objective of effectively repeating the similar processes used for producing the Sylramic-iBN fiber using a design of experiments approach to first understand the cause of the less than optimum Sylramic-iBN microstructure and then attempting to develop processconditions that eliminate or minimize these key microstructural issues. In so doing, it is predicted that that theseadvanced process could result in an UHT SiC

  11. Silicon assistant carbothermal reduction for SiC powders

    Institute of Scientific and Technical Information of China (English)

    Kezhi Li; Jian Wei; Hejun Li; Chuang Wang; Gengsheng Jiao

    2008-01-01

    The silicon assistant method to increase the reaction yield of carbothermal reduction of silica at a lower temperature is reported. The effect of silicon on the carbothermal reduction process has been investigated in detail. Compared with traditional reduction, the introduction of silicon can change the reaction path and further increase the conversion of silicon carbide at a lower temperature. It is considered that the assistant reduction consists of three steps: vaporizing and melting of silicon, formation of silicon monoxide, and synthesis of silicon carbide. The morphology of the synthesized SiC powders through the silicon assistant method can be affected apparently by the experimental temperature.

  12. Construction Progress of the S-IC Test Stand

    Science.gov (United States)

    1961-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo shows the construction progress of the test stand as of August 14, 1961. Water gushing in from the disturbance of a natural spring contributed to constant water problems during the construction process. It was necessary to pump water from the site on a daily basis and is still pumped from the site today. The equipment is partially submerged in the water emerging from the spring.

  13. 10kV SiC MOSFET split output power module

    DEFF Research Database (Denmark)

    Beczkowski, Szymon; Li, Helong; Uhrenfeldt, Christian

    2015-01-01

    The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical...

  14. Control of SiC Based Front-End Rectifier under Unbalanced Supply Voltage

    DEFF Research Database (Denmark)

    Maheshwari, Ramkrishan; Trintis, Ionut; Gohil, Ghanshyamsinh Vijaysinh

    2015-01-01

    A voltage source converter is used as a front end converter typically. In this paper, a converter which is realized using SiC MOSFET is considered. Due to SiC MOSFET, a switching frequency more than 50 kHz can be achieved. This can help increasing the current control loop bandwidth, which...

  15. Characterisation of 10 kV 10 A SiC MOSFET

    DEFF Research Database (Denmark)

    Eni, Emanuel-Petre; Incau, Bogdan Ioan; Munk-Nielsen, Stig

    2015-01-01

    The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting...

  16. Using of the Modern Semiconductor Devices Based on the SiC

    Directory of Open Access Journals (Sweden)

    Pavel Drabek

    2008-01-01

    Full Text Available This paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide inthe power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties incomparison with current using power semiconductor devices ((IGBT, MOSFET, CoolFET transistors.

  17. A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules

    DEFF Research Database (Denmark)

    Reigosa, Paula Diaz; Iannuzzo, Francesco; Luo, Haoze

    2017-01-01

    to the experimental results, two different failure mechanisms have been identified, both reducing the short-circuit capability of SiC power modules with respect to discrete SiC devices. Based on such failure mechanisms, two short-circuit safety criteria have been formulated: 1) the short...

  18. Synthesis of SiC from rice husk in a plasma reactor

    Indian Academy of Sciences (India)

    S K Singh; B C Mohanty; S Basu

    2002-11-01

    A new route for production of SiC from rice husk is reported by employing thermal plasma technique. The formation of -SiC is observed in a short time of 5 min. The samples are characterized by XRD and SEM.

  19. Development of Simulink-Based SiC MOSFET Modeling Platform for Series Connected Devices

    DEFF Research Database (Denmark)

    Tsolaridis, Georgios; Ilves, Kalle; Reigosa, Paula Diaz

    2016-01-01

    A new MATLAB/Simulink-based modeling platform has been developed for SiC MOSFET power modules. The modeling platform describes the electrical behavior f a single 1.2 kV/ 350 A SiC MOSFET power module, as well as the series connection of two of them. A fast parameter initialization is followed...

  20. Deposition of thin ultrafiltration membranes on commercial SiC microfiltration tubes

    DEFF Research Database (Denmark)

    Facciotti, Marco; Boffa, Vittorio; Magnacca, Giuliana;

    2014-01-01

    Porous SiC based materials present high mechanical, chemical and thermal robustness, and thus have been largely applied to water-filtration technologies. In this study, commercial SiC microfiltration tubes with nominal pore size of 0.04 m were used as carrier for depositing thin aluminium oxide...

  1. The effect of Cs{sup +} ions on codeposition of SiC particles with nickel

    Energy Technology Data Exchange (ETDEWEB)

    Rudnik, Ewa, E-mail: erudnik@agh.edu.pl [AGH University of Science and Technology, Faculty of Non-Ferrous Metals, Department of Physical Chemistry and Metallurgy of Non-Ferrous Metals, Laboratory of Physical Chemistry and Electrochemistry, Al. Mickiewicza 30, 30-059 Cracow (Poland); Burzynska, Lidia; Gut, Marcin [AGH University of Science and Technology, Faculty of Non-Ferrous Metals, Department of Physical Chemistry and Metallurgy of Non-Ferrous Metals, Laboratory of Physical Chemistry and Electrochemistry, Al. Mickiewicza 30, 30-059 Cracow (Poland)

    2011-04-15

    Research highlights: {yields} The papers describes electrodeposition of SiC particles with nickel matrix in the presence of cesium ions. {yields} Correlations among the Cs{sup +} concentration in the bath, kinetics of the cathodic process, SiC content in the deposits as well as adsorption of Ni{sup 2+} ions on SiC were found. {yields} Microhardness of the Ni/SiC deposits was also determined. - Abstract: Electrodeposition of SiC particles (technical powder) with nickel matrix in the presence of cesium ions (0-37.6 mM) was investigated. The influence of Cs{sup +} concentration on cathodic polarization curves was determined in galvanostatic and potentiodynamic measurements. The presence of Cs{sup +} in the solution enhanced in some extent adsorption of Ni{sup 2+} ions on SiC, but preferential cesium adsorption occurred simultaneously. The last phenomenon resulted in cesium incorporation in the composite coating. The particle content in the deposits (16-24 vol%) was governed by the amount of nickel ions adsorbed on SiC. Structure of the composite coatings was studied by microscopic observations. At highest Cs{sup +} concentrations, incorporation of small SiC grains was inhibited. Microhardness of deposits (390-800 HV) was directly dependent on the SiC content in the coatings.

  2. Broadband Antireflection and Light Extraction Enhancement in Fluorescent SiC with Nanodome Structures

    DEFF Research Database (Denmark)

    Ou, Yiyu; Zhu, Xiaolong; Jokubavicius, Valdas

    2014-01-01

    We demonstrate a time-efficient and low-cost approach to fabricate Si3N4 coated nanodome structures in fluorescent SiC. Nanosphere lithography is used as the nanopatterning method and SiC nanodome structures with Si3N4 coating are formed via dry etching and thin film deposition process. By using...

  3. MAX Phase Modified SiC Composites for Ceramic-Metal Hybrid Cladding Tubes

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Yang-Il; Kim, Sun-Han; Park, Dong-Jun; Park, Jeong-Hwan; Park, Jeong-Yong; Kim, Hyun-Gil; Koo, Yang-Hyun [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2015-05-15

    A metal-ceramic hybrid cladding consists of an inner zirconium tube, and an outer SiC fiber-matrix SiC ceramic composite with surface coating as shown in Fig. 1 (left-hand side). The inner zirconium allows the matrix to remain fully sealed even if the ceramic matrix cracks through. The outer SiC composite can increase the safety margin by taking the merits of the SiC itself. In addition, the outermost layer prevents the dissolution of SiC during normal operation. On the other hand, a ceramic-metal hybrid cladding consists of an outer zirconium tube, and an inner SiC ceramic composite as shown in Fig. 1 (right-hand side). The outer zirconium protects the fuel rod from a corrosion during reactor operation, as in the present fuel claddings. The inner SiC composite, additionally, is designed to resist the severe oxidation under a postulated accident condition of a high-temperature steam environment. Reaction-bonded SiC was fabricated by modifying the matrix as the MAX phase. The formation of Ti{sub 3}SiC{sub 2} was investigated depending on the compositions of the preform and melt. In most cases, TiSi{sub 2} was the preferential phase because of its lowest melting point in the Ti-Si-C system. The evidence of Ti{sub 3}SiC{sub 2} was the connection with the pressurizing.

  4. Tribo-mechanical behaviour of SiC filled glass-epoxy composites at ...

    African Journals Online (AJOL)

    Tribo-mechanical behaviour of SiC filled glass-epoxy composites at elevated temperatures. ... Username, Password, Remember me, or Register ... For instance, the introduction of ceramics such (SiC, Al2O3, TiC, etc.) as within the matrix ...

  5. Development of nanoporous TiO2 and SiC membranes for membrane filtration

    DEFF Research Database (Denmark)

    König, Katja; Vigna, Erika; Farsi, Ali

    reverse osmosis membranes by ceramic counterparts would provide higher fluxes and allow more efficient cleaning of the membranes. The aim of this work was to prepare defect-free nanoporous ceramic (TiO2 and SiC) layers on macroporous SiC supports by using electrophoretic deposition and dip...

  6. Pensamiento Superior y Desarrollo Territorial

    Directory of Open Access Journals (Sweden)

    Víctor Manuel Racancoj Alonzo

    2015-04-01

    Full Text Available Esta reflexión pretende explicar el papel, fundamental, que juega el pensamiento superior, en la formulación y la práctica de modelos de desarrollo territorial local; para que contribuyan de forma sustantiva, en la transformación de las condiciones socioeconómicas adversas que hoy viven comunidades indígenas y rurales de muchos países, como Guatemala, situación que puede resumirse en altos índices de pobreza y desnutrición. Pero, el pensamiento superior, debe ser competencia de la población con pertenencia a lo local, pues si y solo si esta condición existe, se dará validez y viabilidad al desarrollo territorial. Para alcanzar competencias de pensamiento superior, en los espacios locales, se tiene que superar obstáculos en el modelo de universidad, que hoy estamos familiarizados a ver y pensar; modelos que tienen las características de: herencia colonial, disfunción con la problemática económica, cultural, social y política de la sociedad y la negación de los saberes ancestrales.

  7. Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique

    Science.gov (United States)

    Bao, Jianfeng; Norimatsu, Wataru; Iwata, Hiroshi; Matsuda, Keita; Ito, Takahiro; Kusunoki, Michiko

    2016-11-01

    Graphene has a negative thermal expansion coefficient; that is, when heated, the graphene lattice shrinks. On the other hand, the substrates typically used for graphene growth, such as silicon carbide, have a positive thermal expansion coefficient. Hence, on cooling graphene on SiC, graphene expands but SiC shrinks. This mismatch will physically break the atomic bonds between graphene and SiC. We have demonstrated that a graphenelike buffer layer on SiC can be converted to a quasifreestanding monolayer graphene by a rapid-cooling treatment. The decoupling of graphene from the SiC substrate was actually effective for reducing the electric carrier scattering due to interfacial phonons. In addition, the rapidly cooled graphene obtained in this way was of high-quality, strain-free, thermally stable, and strongly hole doped. This simple, classical, but quite novel technique for obtaining quasifreestanding graphene could open a new path towards a viable graphene-based semiconductor industry.

  8. A Novel SiC Foam Valve Tray for Distillation Columns

    Institute of Scientific and Technical Information of China (English)

    张吕鸿; 刘学宽; 李鑫钢; 高鑫; 隋红; 张劲松; 杨振明; 田冲; 李洪

    2013-01-01

    The novel SiC foam valve tray was made of thin slices of SiC foam material with a high specific surface area. Hydrodynamic performances of the novel SiC foam valve tray were studied with air-water system at atmos-pheric pressure. These performance parameters included pressure drop, entrainment, weeping and clear liquid height. The mass transfer efficiency of the SiC foam valve tray was measured in laboratory plate column. Compared with the F1 float valve tray, the dry pressure drop was decreased about 25%, the entrainment rate was about 70%lower at high gas load, the weeping was much better, and the mass transfer efficiency was far higher. Thus, the overall performance of the novel SiC foam valve tray was better than that of F1 float valve tray.

  9. Preparation of Ti3SiC2 with Aluminum by Means of Spark Plasma Sintering

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Polycrystalline bulk Ti3SiC2 material with a high purity and density was fabricated by spark plasma sintering from the elemental powder mixture with starting composition of Ti3Si1-xAlxC2,where x=0.05-0.2.X-ray diffraction patterns and scanning electron microscopy photographs of the fully dense samples show that a proper addition of aluminum promotes the formation,and accelerates the crystal growth rate of Ti3SiC2,consequently results in a high purity of the prepared samples.The synthesized Ti3SiC2 is in plane-shape with a size of about 10-25μm in the elongated dimension.Solid solution of aluminum decreases the thermal stability of Ti3SiC2,and lowers the temperature of Ti3SiC2 decomposeing to be 1300 ℃.

  10. Coating of SiC Powder with Nano YAG Phase

    Institute of Scientific and Technical Information of China (English)

    Zhang Ning; Cai Qingkui; Ru Hongqiang; Li Ying; Qiu Guanming; Sun Xudong

    2005-01-01

    SiC-YAG(Y3Al5O12) ceramic composite powders were prepared by co-precipitation coating method. Mechanism of co-precipitation coating of SiC powders with Y3+ and Al3+ precursors was investigated. If the concentration of [OH-] ion in the solution is controlled within the range between critical values for heterogeneous nucleation and homogeneous nucleation, Y3+ and Al3+ precipitation precursors can be coated on the surface of SiC particles. Y3+ and Al3+ precipitation precursors transform into YAG phase after calcining at 1000 ℃ without the formation of YAM and YAP phases. The formation temperature of YAG phase is about 600 ℃ lower than that of conventional powder mixing method. The effect of pH value of the solution and precipitant titration rate on coating quality of SiC-YAG composite powders was also studied. The results show that co-precipitation coating can be realized at a final pH of 9 and a precipitant titration rate of 5 ml·min-1.

  11. Crystal growth and characterization of fluorescent SiC

    DEFF Research Database (Denmark)

    Wellmann, P.; Kaiser, M.; Hupfer, T.

    of the phosphorous into the SiC substrate to make an all semiconductor white LED. In recent years, due to the improvement of the crystalline quality of SiC by the so called fast sublimation growth process (FSGP), high room temperature internal quantum efficiencies of the yellow donor acceptor pair luminescence of 6H......-SiC co-doped with nitrogen and boron has been achieved [1][2]. The source is the rate determining step, and is expected to be determining the fluorescent properties by introducing dopants to the layer from the source. The optimization process of the polycrystalline, co-doped SiC:B,N source material...... and its impact on the FSPG epitaxial process, in particular the influence on the brightness of the is presented. In particular, the doping properties of the poly-SiC source material influence on the brightness of the fluorescent 6H-SiC. In addition we have investigated how the grain orientation...

  12. Creep behavior for advanced polycrystalline SiC fibers

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Kohyama, Akira [Kyoto Univ. (Japan)] [and others

    1997-08-01

    A bend stress relaxation (BSR) test is planned to examine irradiation enhanced creep in polycrystalline SiC fibers which are under development for use as fiber reinforcement in SiC/SiC composite. Baseline 1 hr and 100 hr BSR thermal creep {open_quotes}m{close_quotes} curves have been obtained for five selected advanced SiC fiber types and for standard Nicalon CG fiber. The transition temperature, that temperature where the S-shaped m-curve has a value 0.5, is a measure of fiber creep resistance. In order of decreasing thermal creep resistance, with the 100 hr BSR transition temperature given in parenthesis, the fibers ranked: Sylramic (1261{degrees}C), Nicalon S (1256{degrees}C), annealed Hi Nicalon (1215{degrees}C), Hi Nicalon (1078{degrees}C), Nicalon CG (1003{degrees}C) and Tyranno E (932{degrees}C). The thermal creep for Sylramic, Nicalon S, Hi Nicalon and Nicalon CG fibers in a 5000 hr irradiation creep BSR test is projected from the temperature dependence of the m-curves determined during 1 and 100 hr BSR control tests.

  13. Cohort profile: the Social Inequality in Cancer (SIC) cohort study.

    Science.gov (United States)

    Nordahl, Helene; Hvidtfeldt, Ulla Arthur; Diderichsen, Finn; Rod, Naja Hulvej; Osler, Merete; Frederiksen, Birgitte Lidegaard; Prescott, Eva; Tjønneland, Anne; Lange, Theis; Keiding, Niels; Andersen, Per Kragh; Andersen, Ingelise

    2014-12-01

    The Social Inequality in Cancer (SIC) cohort study was established to determine pathways through which socioeconomic position affects morbidity and mortality, in particular common subtypes of cancer. Data from seven well-established cohort studies from Denmark were pooled. Combining these cohorts provided a unique opportunity to generate a large study population with long follow-up and sufficient statistical power to develop and apply new methods for quantification of the two basic mechanisms underlying social inequalities in cancer-mediation and interaction. The SIC cohort included 83 006 participants aged 20-98 years at baseline. A wide range of behavioural and biological risk factors such as smoking, physical inactivity, alcohol intake, hormone replacement therapy, body mass index, blood pressure and serum cholesterol were assessed by self-administered questionnaires, physical examinations and blood samples. All participants were followed up in nationwide demographic and healthcare registries. For those interested in collaboration, further details can be obtained by contacting the Steering Committee at the Department of Public Health, University of Copenhagen, at inan@sund.ku.dk.

  14. A Kochen–Specker inequality from a SIC

    Energy Technology Data Exchange (ETDEWEB)

    Bengtsson, Ingemar [Stockholms Universitet, Fysikum, S-10691 Stockholm (Sweden); Blanchfield, Kate, E-mail: kate@fysik.su.se [Stockholms Universitet, Fysikum, S-10691 Stockholm (Sweden); Cabello, Adán [Departamento de Física Aplicada II, Universidad de Sevilla, E-41012 Sevilla (Spain); Stockholms Universitet, Fysikum, S-10691 Stockholm (Sweden)

    2012-01-09

    Yu and Oh (eprint) have given a state-independent proof of the Kochen–Specker theorem in three dimensions using only 13 rays. The proof consists of showing that a non-contextual hidden variable theory necessarily leads to an inequality that is violated by quantum mechanics. We give a similar proof making use of 21 rays that constitute a SIC (symmetric informationally-complete positive operator-valued measure) and a complete set of MUB (mutually unbiased bases). A theory-independent inequality is also presented using the same 21 rays, as required for experimental tests of contextuality. -- Highlights: ► We find a state-independent Kochen–Specker inequality in dimension 3 with 21 rays. ► The rays constitute a SIC (9 rays) and a complete set of MUB (12 rays). ► Orthogonalities among the rays produce the Hesse configuration. ► The rays also give a state-independent non-contextual hidden variable inequality. ► We show that both inequalities are violated by quantum mechanics.

  15. Microstructure characterization of SiC nanowires as reinforcements in composites

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Ronghua [Department of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Yang, Wenshu, E-mail: yws001003@163.com [Department of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wu, Ping [Northwest Institute of Nuclear Technology, Xi' an, 710024 (China); Hussain, Murid [Department of Chemical Engineering, COMSATS Institute of Information Technology, M.A. Jinnah Building, Defence Road, Off Raiwind Road, Lahore 54000 (Pakistan); Xiu, Ziyang; Wu, Gaohui; Wang, Pingping [Department of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2015-05-15

    SiC nanowires have been rarely investigated or explored along their axial direction by transmission electron microscopy (TEM). Here we report the investigation of the cross-section microstructure of SiC nanowires by embedding them into Al matrix. Morphology of SiC nanowires was cylindrical with smooth surface or bamboo shape. Cubic (3C-SiC) and hexagonal structure (2H-SiC) phases were detected by X-ray diffraction (XRD) analysis. High density stacking faults were observed in both the cylindrical and bamboo shaped nanowires which were perpendicular to their axial direction. Selected area electron diffraction (SAED) patterns of the cylindrical and bamboo shaped SiC nanowires both in the perpendicular and parallel direction to the axial direction were equivalent in the structure. After calculation and remodeling, it has been found that the SAED patterns were composed of two sets of diffraction patterns, corresponding to 2H-SiC and 3C-SiC, respectively. Therefore, it could be concluded that the SiC nanowires are composed of a large number of small fragments that are formed by hybrid 3C-SiC and 2H-SiC structures. - Graphical abstract: Display Omitted - Highlights: • Cross-section microstructure of SiC nanowires was observed in Al composite. • Cylindrical with smooth surface or bamboo shape SiC nanowires were found. • The cylindrical and bamboo shaped SiC nanowires were equivalent in structure. • Structure of SiC nanowires was remodeled. • SiC nanowires are composed of hybrid 3C-SiC and 2H-SiC structures.

  16. Studies on zooplankton of Lago Paione Superiore

    Directory of Open Access Journals (Sweden)

    Patrizia COMOLI

    1999-08-01

    Full Text Available We report here the results of a three year study on the zooplankton of Lago Paione Superiore, an acid sensitive lake above the tree line in the Italian Alps. The research was carried out within MOLAR, an EC-founded Project on “Measuring and Modeling the dynamic response of remote mountain lakes ecosystems to environmental change”. This study comes after a series of investigations on the effects of acidification, in which we documented the changes occurred with decreasing water pHs, by comparing the recent situation with that in the literature of the 40s, and reconstructed the beginning of anthropogenic disturbance through an analysis of the past cladocera assemblages archived in the lake sediments. A characteristic pattern in seasonal periodicity is a transition from a community dominated by small zooplankton (August to a community where the large particle-feeder Daphnia longispina dominates. This is a typical pattern observed in fishless, copepod-cladocera lakes. Regardless from which food is able to exploit, Daphnia population of Lago Paione Superiore is composed by well-fed organisms, visually rich in lipids, able to produce more than one generation/ year of parthenogenetic females at density levels which are rather high in an oligotrophic high mountain lake.

  17. Mnemonic Training Reshapes Brain Networks to Support Superior Memory

    NARCIS (Netherlands)

    Dresler, M.; Shirer, W.R.; Konrad, B.N.; Muller, N.C.J.; Wagner, I.; Fernandez, G.S.E.; Czisch, M.; Greicius, M.D.

    2017-01-01

    Memory skills strongly differ across the general population; however, little is known about the brain characteristics supporting superior memory performance. Here we assess functional brain network organization of 23 of the world's most successful memory athletes and matched controls with fMRI

  18. SiC MOSFET体二极管反向恢复特性研究%Research on Reverse Recovery Behavior of the Body Diode of SiC MOSFET

    Institute of Scientific and Technical Information of China (English)

    史孟; 彭咏龙; 李亚斌; 江涛

    2016-01-01

    The structure characteristics of the new power device SiC MOSFET and the mechanism of the reverse re-covery of the body diode are analyzed in detail, and the calculation process of the voltage and current of the reverse recovery process is derived. At the same time, a double pulse test platform is built, and the effects of the most common external factors, such as varied turn-off voltage, forward current and series parasitic inductance, on the reverse recovery behavior of the body diode of SiC MOSFET is analyzed by the methods of experiment and simula-tion. In addition, the reverse recovery performances of the body diode of SiC MOSFET, Si MOSFET and fast recov-ery diode are compared at the same voltage level. Related research results show that the body diode of SiC MOSFET can be used as a continuous flow channel in the converter without anti-paralleling a fast recovery diode, which has a certain reference value for practical engineering applications.%详细分析了新型功率器件SiC MOSFET的结构特点及其寄生体二极管的反向恢复机理,推导了反向恢复过程的电压与电流计算;同时,搭建了双脉冲实验测试平台,通过实验和仿真的方法,测试了不同关断电压、正向导通电流和串联寄生电感这些最常见的外部因素对SiC MOSFET寄生体二极管反向恢复特性的影响;此外,对比测试了同电压等级的SiC MOSFET、 Si MOSFET寄生体二极管和快恢复二极管的反向恢复性能。相关结果表明SiC MOSFET寄生体二极管可以作为变换器中的续流通道而不必额外再单独反并联快恢复二极管,对实际工程应用有一定的借鉴意义。

  19. ANATOMIC RESEARCH OF SUPERIOR CLUNIAL NERVE TRAUMA

    Institute of Scientific and Technical Information of China (English)

    1999-01-01

    In order to find the mechanism of superior clunial nerve (SCN) trauma, we dissected and revealed SCN from 12 corpses (24 sides). Combining 100 sides of SCN trauma, we inspected the course of SCN, the relation between SCN and it's neighbour tissues with the situation of SCN when being subjected to force. We found that the following special anatomic characteristics and mechanical elements such as the course of SCN, it's turning angles, the bony fibrous tube at the iliac crest, the posterior layer of the lumbodorsal fascia and SCN neighbour adipose tissue, are the causes of external force inducing SCN trauma. The anatomic revealment is the guidance of SCN trauma treatment with edged needle.

  20. Detection and analysis of particles with failed SiC in AGR-1 fuel compacts

    Energy Technology Data Exchange (ETDEWEB)

    Hunn, John D., E-mail: hunnjd@ornl.gov [Oak Ridge National Laboratory (ORNL), P.O. Box 2008, Oak Ridge, TN 37831-6093 (United States); Baldwin, Charles A.; Gerczak, Tyler J.; Montgomery, Fred C.; Morris, Robert N.; Silva, Chinthaka M. [Oak Ridge National Laboratory (ORNL), P.O. Box 2008, Oak Ridge, TN 37831-6093 (United States); Demkowicz, Paul A.; Harp, Jason M.; Ploger, Scott A. [Idaho National Laboratory (INL), P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States)

    2016-09-15

    Highlights: • Cesium release was used to detect SiC failure in HTGR fuel. • Tristructural-isotropic particles with SiC failure were isolated by gamma screening. • SiC failure was studied by X-ray tomography and SEM. • SiC degradation was observed after irradiation and subsequent safety testing. - Abstract: As the primary barrier to release of radioactive isotopes emitted from the fuel kernel, retention performance of the SiC layer in tristructural isotropic (TRISO) coated particles is critical to the overall safety of reactors that utilize this fuel design. Most isotopes are well-retained by intact SiC coatings, so pathways through this layer due to cracking, structural defects, or chemical attack can significantly contribute to radioisotope release. In the US TRISO fuel development effort, release of {sup 134}Cs and {sup 137}Cs are used to detect SiC failure during fuel compact irradiation and safety testing because the amount of cesium released by a compact containing one particle with failed SiC is typically ten or more times higher than that released by compacts without failed SiC. Compacts with particles that released cesium during irradiation testing or post-irradiation safety testing at 1600–1800 °C were identified, and individual particles with abnormally low cesium retention were sorted out with the Oak Ridge National Laboratory (ORNL) Irradiated Microsphere Gamma Analyzer (IMGA). X-ray tomography was used for three-dimensional imaging of the internal coating structure to locate low-density pathways through the SiC layer and guide subsequent materialography by optical and scanning electron microscopy. All three cesium-releasing particles recovered from as-irradiated compacts showed a region where the inner pyrocarbon (IPyC) had cracked due to radiation-induced dimensional changes in the shrinking buffer and the exposed SiC had experienced concentrated attack by palladium; SiC failures observed in particles subjected to safety testing were

  1. In situ toughened SiC ceramics with Al-B-C additions and oxide-coated SiC platelet/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Cao, J. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

    1996-12-01

    This work aimed at fabrication and characterization of high toughness SiC ceramics through the applications of in situ toughening and SiC platelet reinforcement. The processing-microstructure-property relations of hot pressed SiC with Al, B, and C additions (designated as ABC-SiC) were investigated. Through a liquid phase sintering mechanism, dense SiC was obtained by hot pressing at a temperature as low as 1,700 C with 3 wt% Al, 0.6 wt% B, and 2 wt% C additions. These sintering aids also enhanced the {beta}-to-{alpha} (3C-to-4H) phase transformation, which promoted SiC grains to grow into plate-like shapes. Under optimal processing conditions, the microstructure exhibited high-aspect-ratio plate-shaped grains with a thin (< 1 nm) Al-containing amorphous grain boundary film. The mechanical properties of the toughened SiC and the composites were evaluated in comparison with a commercial Hexoloy SiC under identical test conditions. The C-curve behavior was examined using the strength-indentation load relationship and compared with that directly measured using precracked compact tension specimens. The in situ toughened ABC-SiC exhibited much improved flaw tolerance and a significantly rising R-curve behavior. A steady-state toughness in excess of 9 MPam{sup 1/2} was recorded for the ABC-SiC in comparison to a single valued toughness below 3 MPam{sup 1/2} for the Hexoloy. Toughening in the ABC-SiC was mainly attributed to grain bridging and subsequent pullout of the plate-shaped grains. The high toughness ABC-SiC exhibited a bend strength of 650 MPa with a Weibull modulus of 19; in comparison, the commercial SiC showed a bend strength of 400 MPa with a Weibull modulus of 6. Higher fracture toughness was also achieved by the reinforcement of SiC platelets, encapsulated with alumina, yttria, or silica, in a SiC matrix.

  2. Entidades fiscalizadoras superiores y accountability

    OpenAIRE

    Estela Moreno, María

    2016-01-01

    OBJETIVOS DE LA TESIS: El objetivo general del trabajo es establecer el nivel de eficacia de las Entidades Fiscalizadoras Superiores (EFS) como agencia asignada y herramienta de accountability horizontal, a través de la valoración de su diseño institucional y de la calidad de sus productos finales, los informes de auditoría, estableciéndose los siguientes objetivos específicos: 1. Relevar las nociones de accountability, actualizando el Estado del Arte de la cuestión. 2. Analizar la ...

  3. The sentence superiority effect revisited.

    Science.gov (United States)

    Snell, Joshua; Grainger, Jonathan

    2017-11-01

    A sentence superiority effect was investigated using post-cued word-in-sequence identification with the rapid parallel visual presentation (RPVP) of four horizontally aligned words. The four words were presented for 200ms followed by a post-mask and cue for partial report. They could form a grammatically correct sentence or were formed of the same words in a scrambled agrammatical sequence. Word identification was higher in the syntactically correct sequences, and crucially, this sentence superiority effect did not vary as a function of the target's position in the sequence. Cloze probability measures for words at the final, arguably most predictable position, revealed overall low values that did not interact with the effects of sentence context, suggesting that these effects were not driven by word predictability. The results point to a level of parallel processing across multiple words that enables rapid extraction of their syntactic categories. These generate a sentence-level representation that constrains the recognition process for individual words, thus facilitating parallel word processing when the sequence is grammatically sound. Copyright © 2017 Elsevier B.V. All rights reserved.

  4. Comparing SiC switching power devices: MOSFET, NPN transistor and GTO thyristor

    Science.gov (United States)

    Huang, Alex Q.; Zhang, Bo

    2000-02-01

    This paper for the first time systematically analyzed the operation mechanism of SiC NPN transistors. Theoretical device figure-of-merits for switching power devices based on the conduction loss and switching loss were developed. The on-state loss and the switching loss of 4.5-kV SiC switching power devices (MOSFET, NPN transistor and GTO thyristor) were then compared by using theoretical and numerical calculations. Special emphasis is placed on comparing the total power loss of the devices at a given current density. Theoretical analyses and simulation results show that GTO thyristors have a large switching loss due to the long current tail at turn-off, hence restricting its maximum operation frequency. High voltage SiC MOSFETs have a large on-state power dissipation at high current levels due to the resistive nature of the drift region, restricting their applications at high current densities. SiC NPN transistors have a comparable switching loss as that of SiC MOSFETs, but at the same time, SiC NPN transistors have the lowest on-state loss. This study indicates that SiC NPN transistor is the most attractive switching power device at 4.5 kV.

  5. Application of rapid milling technology for fabrication of SiC nanoparticles.

    Science.gov (United States)

    Kim, Jong-Woong; Shim, Jae-Shik; Kwak, Min-Gi; Hong, Sung-Jei; Cho, Hyun-Min

    2013-09-01

    SiC nanoparticles were successfully fabricated by a high energy ball milling method, so that can be used in the printed electronics to make SiC thin film patterns. Here we utilized the waste of Si sludge for making the SiC nanoparticles. In order to achieve uniform thin film from the nanoparticle ink, fine sized SiC nanoparticles less than 100 nm has to be uniformly dispersed. In this study, we employed the ultra apex milling (UAM) system for particle comminution and dispersion. We investigated the effects of milling parameters, e.g., size of ZrO2 bead and milling time. The size of the SiC particles reached about 103 nm after 4 hours of UAM, when the ZrO2 beads of 50 microm were used. Then SiC ink was formulated with organic solvents and a dispersing agent. A specially designed pattern was printed by an ink-jet printer for evaluating the feasibility of the SiC nanoparticle inks.

  6. Additive Manufacturing of SiC Based Ceramics and Ceramic Matrix Composites

    Science.gov (United States)

    Halbig, Michael Charles; Singh, Mrityunjay

    2015-01-01

    Silicon carbide (SiC) ceramics and SiC fiber reinforcedSiC ceramic matrix composites (SiCSiC CMCs) offer high payoff as replacements for metals in turbine engine applications due to their lighter weight, higher temperature capability, and lower cooling requirements. Additive manufacturing approaches can offer game changing technologies for the quick and low cost fabrication of parts with much greater design freedom and geometric complexity. Four approaches for developing these materials are presented. The first two utilize low cost 3D printers. The first uses pre-ceramic pastes developed as feed materials which are converted to SiC after firing. The second uses wood containing filament to print a carbonaceous preform which is infiltrated with a pre-ceramic polymer and converted to SiC. The other two approaches pursue the AM of CMCs. The first is binder jet SiC powder processing in collaboration with rp+m (Rapid Prototyping+Manufacturing). Processing optimization was pursued through SiC powder blending, infiltration with and without SiC nano powder loading, and integration of nanofibers into the powder bed. The second approach was laminated object manufacturing (LOM) in which fiber prepregs and laminates are cut to shape by a laser and stacked to form the desired part. Scanning electron microscopy was conducted on materials from all approaches with select approaches also characterized with XRD, TGA, and bend testing.

  7. Effect of Ti and Si interlayer materials on the joining of SiC ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Yang Il; Park, Jung Hwan; Kim, Hyun Gil; Park, Dong Jun; Park, Jeong Yong; Kim, Weon Ju [LWR Fuel Technology Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-08-15

    SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ∼0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ∼100 MPa. The joint interface consisted of TiSi{sub 2}, Ti{sub 3}SiC{sub 2}, and SiC phases formed by a diffusion reaction of Ti and Si.

  8. Tribological Behavior ofTi3SiC2-based Material

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The wear and friction properties of Ti3SiC2-based materials were studied using the pin-on-disc method. The friction coefficient of Ti3SiC2-based material was not very sensitive to normal load, the steady state value, μ, increased from 0.4 to 0.5 when the normal load increased from 7.7 N to 14.7 N. The wear volume for Ti3SiC2 disc increased with increasing normal load or sliding distance in the tests. The average wear rate of Ti3SiC2-based material was 9.9×10-5 mm3/Nm. The debris on the Ti3SiC2 disc was essentially made up of Ti3SiC2 and steel pin materials,while the debris on the steel sliders was generally pi.n material. The wear mechanism was concluded as the fracture and delamination of Ti3SiC2-based materials followed by adhesive wear of steel sliders.

  9. Preparation and Microstructure of Cu/Ti3SiC2 Nanocomposite

    Institute of Scientific and Technical Information of China (English)

    GU Wan-li; SHENG Wen-bin; CHEN Zong-min

    2006-01-01

    Mixed micron-sized Cu/Ti3SiC2 (vol5%) powder was mechanically milled using agate balls and zirconia balls separately. Then followed an examination of it with the FEI-SEM. The experimental results show that, distributed homogenously in Cu matrix, the Ti3SiC2 particles have a size of about 30-50 nm after milled with agate balls for 8 h, while it remains approximately unchanged after milled with zirconia balls. The microstructure of the mixture at different ball-milling stages was also studied. Bulks of Cu/Ti3SiC2 nano-composite were fabricated by hot pressing nano-sized Cu/Ti3SiC2 powder at the temperature of 1 073 K under 100 MPa. Then came an investigation of the effects of the particle size and agglomerate state of Ti3SiC2 as well as the microstructure of Cu/Ti3SiC2 nano-composite. It was found that the nano-sized Ti3SiC2 particles distribute evenly in copper.

  10. Electronic properties of MoS{sub 2} on monolayer, bilayer and bulk SiC: A density functional theory study

    Energy Technology Data Exchange (ETDEWEB)

    Zan, Wenyan; Geng, Wei [State Key Laboratory of Applied Organic Chemistry, Department of Chemistry, Lanzhou University, Lanzhou 730000 (China); Liu, Huanxiang [School of Pharmacy, Lanzhou University, Lanzhou 730000 (China); Yao, Xiaojun, E-mail: xjyao@lzu.edu.cn [State Key Laboratory of Applied Organic Chemistry, Department of Chemistry, Lanzhou University, Lanzhou 730000 (China)

    2016-05-05

    The structure and electronic properties of MoS{sub 2} and SiC (single-layer SiC, double layer SiC, C-terminated SiC and Si-terminated SiC) composites were investigated by using density functional theory calculations. The calculation results show that the electronic properties of MoS{sub 2} are modified at different levels by combining with different thickness of SiC. The heterostructures (MoS{sub 2}/C-terminated SiC and MoS{sub 2}/Si-terminated SiC) possess larger binding energies than MoS{sub 2}/single-layer SiC and MoS{sub 2}/bilayer SiC, suggesting the higher stability for MoS{sub 2}/C-terminated SiC and MoS{sub 2}/Si-terminated SiC composites. It is found that charge transfer is from SiC to MoS{sub 2} in these heterostructures. MoS{sub 2}/single-layer SiC, MoS{sub 2}/double-layer SiC and MoS{sub 2}/C-terminated SiC are semiconductors, whereas MoS{sub 2}/Si-terminated SiC has no gap. - Highlights: • The structure and electronic properties of MoS{sub 2}/SiC composites were investigated. • The electronic property of MoS{sub 2} can be modulated by SiC with different thickness. • The MoS{sub 2}/Si-terminated SiC has higher stability than MoS{sub 2}/C-terminated SiC.

  11. Sensing Performance Study of SiC, a Wide Bandgap Semiconductor Material Platform for Surface Plasmon Resonance Sensor

    Directory of Open Access Journals (Sweden)

    Wei Du

    2015-01-01

    Full Text Available The sensing properties of a surface plasmon resonance (SPR based waveguide sensor on a wide bandgap semiconductor, silicon carbide (SiC, were studied. Compared to other waveguide sensors, the large bandgap energy of SiC material allows the sensor to operate in the visible and near infrared wavelength range, while the SPR effect by a thin gold film is expected to improve the sensitivity. The confinement factor of the sensor at various wavelengths of the incident light and refractive index of the analyte were investigated using an effective index method. Since the change of analyte type and concentration is reflected by the change of refractive index, the sensing performance can be evaluated by the shift of resonant wavelength from the confinement factor spectrum at different refractive index. The results show that the shift of resonant wavelength demonstrates linear characteristics. A sensitivity of 1928 nm/RIU (refractive index unit shift could be obtained from the refractive index of 1.338~1.348 which attracts research interests because most biological analytes are in this range.

  12. Rectified photocurrent in a planar ITO/graphene/ITO photodetector on SiC by local irradiation of ultraviolet light

    Science.gov (United States)

    Yang, Junwei; Guo, Liwei; Huang, Jiao; Mao, Qi; Guo, Yunlong; Jia, Yuping; Peng, Tonghua; Chen, Xiaolong

    2017-10-01

    A rectified photocurrent behaviour is demonstrated in a simple planar structure of ITO-graphene-ITO formed on a SiC substrate when an ultraviolet (UV) light is locally incident on one of the edges between the graphene and ITO electrode. The photocurrent has similar characteristics as those of a vertical structure graphene/semiconductor junction photodiode, but is clearly different from those found in a planar structure metal–graphene–metal device. Furthermore, the device behaves multi-functionally as a photodiode with sensitive UV photodetection capability (responsivity of 11.7 mA W‑1 at 0.3 V) and a self-powered UV photodetector (responsivity of 4.4 mA W‑1 at zero bias). Both features are operative in a wide dynamic range and with a fast speed of response in about gigahertz. The linear I–V behaviour with laser power at forward bias and cutoff at reverse bias leads to a conceptual photodiode, which is compatible with modern semiconductor planar device architecture. This paves a potential way to realize ultrafast graphene planar photodiodes for monolithic integration of graphene-based devices on the same SiC substrate.

  13. Demonstration of SiC Pressure Sensors at 750 C

    Science.gov (United States)

    Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

    2014-01-01

    We report the first demonstration of MEMS-based 4H-SiC piezoresistive pressure sensors tested at 750 C and in the process confirmed the existence of strain sensitivity recovery with increasing temperature above 400 C, eventually achieving near or up to 100% of the room temperature values at 750 C. This strain sensitivity recovery phenomenon in 4H-SiC is uncharacteristic of the well-known monotonic decrease in strain sensitivity with increasing temperature in silicon piezoresistors. For the three sensors tested, the room temperature full-scale output (FSO) at 200 psig ranged between 29 and 36 mV. Although the FSO at 400 C dropped by about 60%, full recovery was achieved at 750 C. This result will allow the operation of SiC pressure sensors at higher temperatures, thereby permitting deeper insertion into the engine combustion chamber to improve the accurate quantification of combustor dynamics.

  14. Relativistic energies for the SiC radical

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Chun-Sheng [Southwest Petroleum University, State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation, Chengdu (China); Shui, Zheng-Wei [Southwest Petroleum University, School of Vocational and Technical Education, Nanchong (China)

    2015-11-15

    The analytical solutions of the Dirac equation with the modified Rosen-Morse potential energy model have been explored. Under the condition of the spin symmetry, we present the bound state energy equation. In the nonrelativistic limit, the relativistic energy equation becomes the nonrelativistic energy form deduced within the framework of the Schroedinger equation. We find that the relativistic effect of the relative motion of the ions leads to a little decrease in the vibrational energies when the vector potential is equal to the scalar potential for the electronic ground state of the SiC radical, while to an increase in those if the vector potential is greater than the scalar potential. (orig.)

  15. Incorporation of oxygen in SiC implanted with hydrogen

    Science.gov (United States)

    Barcz, A.; Jakieła, R.; Kozubal, M.; Dyczewski, J.; Celler, G. K.

    2015-12-01

    Oxygen accumulation at buried implantation-damage layers was studied after post-implantation annealing of hydrogen- or deuterium-implanted 4H-SiC. In this study H+ or 2H+ implantation was carried out at energies E, from 200 keV to 1 MeV, to fluences D, ranging from 2 × 1016/cm2 to 1 × 1017/cm2. For comparison, the implantation was also done into float-zone (FZ) and Czochralski (CZ) silicon wafers. Post-implantation annealing at temperatures from 400 °C to 1150 °C was performed either in pure argon or in a water vapor. Characterization methods included SIMS, RBS and TEM. At sufficiently high doses, hydrogen implantation into semiconductors leads to the irreversible formation of a planar zone of microcavities, bubbles and other extended defects located at the maximum of deposited energy. This kind of highly perturbed layer, containing large amounts of agglomerated hydrogen is known to efficiently getter a number of impurities. Oxygen was detected in both CZ and FZ silicon subjected to Smart-Cut™ processing. We have identified, by SIMS profiling, a considerable oxygen peak situated at the interface between the SiC substrate and a layer implanted with 1 × 1017 H ions/cm2 and heated to 1150 °C in either H2O vapor or in a nominally pure Ar. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, the objective of the present study was to identify the source and possible transport mechanism of oxygen species to the cavity band. Through the analysis of several implants annealed at various conditions, we conclude that, besides diffusion from the bulk or from surface oxides, an alternative path for oxygen agglomeration is migration of gaseous O2 or H2O from the edge of the sample through the porous layer.

  16. Characteristics of A356/SiC{sub p} and A390/SiC{sub p} composites

    Energy Technology Data Exchange (ETDEWEB)

    Goo, Byeong Choon [Korea Railroad Research Institute, Uiwang (Korea, Republic of); Kim, Myung Ho [Inha Univ., Incheon (Korea, Republic of)

    2012-07-15

    Aluminum alloy matrix composites reinforced with SiC particles (AMC) are potential materials applicable to weight reduction of friction materials. We developed two AMC: A356/SiC and A390/SiC. 30{mu}m and 60{mu}m SiC particles with volume fraction of 20% were dispersed in the matrix of A356 and A390 alloys. When the temperature of the liquid alloy was higher than that of the melting point, SIC particles floated up to the surface because of the low viscosity, high surface tension and interfacial energy. To mix the ceramic particles, the aluminum alloy was in the mushy state near the solidus temperature, 610 .deg. C for A356 and 645 .deg. C for A390. Metallurgical, mechanical and tribological characteristics of the manufactured composites were evaluated.

  17. High temperature flow behaviour of SiC reinforced lithium aluminosilicate composites

    Indian Academy of Sciences (India)

    Santanu Das; V S R Murthy; G S Murty

    2001-04-01

    The compressive flow behaviour of lithium aluminosilicate (LAS) glass, with and without SiC particulate reinforcements, was studied. The LAS glass crystallized to spodumene during high-temperature testing. The flow behaviour of LAS glass changed from Newtonian to non-Newtonian due to the presence of crystalline phase. Further, with the addition of 40 vol.% SiC additions, the strain rate sensitivity of flow stress decreased. While the activation energy for flow in LAS was 300 kJ/mole, it increased to 995 kJ/mole with the addition of 40 vol.% SiC reinforcements.

  18. Effects of SiC and MgO on aluminabased ceramic foams filters

    Directory of Open Access Journals (Sweden)

    CAO Da-li

    2007-11-01

    Full Text Available Alumina-based foam ceramic filters were fabricated by using alumina, SiC, magnesia powder as major materials. It has been found that this ceramic filter has a uniform macrostructure for filtering molten metals. The influences of SiC and magnesia content, the sintering temperatures on ceramic properties were discussed. Aluminabased foam ceramic filters containing 2.2 mass% magnesia and 7.6 mass% SiC has a compressive strength of 1.36 MPa and a thermal shock resistance of 5 times. Its main phases after 1 hour sintering at 1 500 consist of alumina, silicon carbide, spinel and mullite.

  19. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices (Invited)

    Science.gov (United States)

    Neudeck, Philip G.

    1999-01-01

    As illustrated by the invited paper at this conference and other works, SiC wafers and epilayers contain a variety of crystallographic imperfections, including micropipes, closed-core screw dislocations, grain boundaries, basal plane dislocations, heteropolytypic inclusions, and surfaces that are often damaged and contain atomically rough features like step bunching and growth pits or hillocks. Present understanding of the operational impact of various crystal imperfections on SiC electrical devices is reviewed, with an emphasis placed on high-field SiC power devices and circuits.

  20. High Speed Lapping of SiC Ceramic Material with Solid (Fixed) Abrasives

    Institute of Scientific and Technical Information of China (English)

    ZHANG Wei; YANG Xin-hong; SHANG Chun-min; HU Xiao-yong; HU Zhong-hui

    2005-01-01

    An experimental investigation is carried out to machine SiC ceramic material through the method of high speed plane lapping with solid(fixed) abrasives after the critical condition of brittle-ductile transition is theoretically analyzed. The results show that the material removal mechanism and the surface roughness are chiefly related to the granularity of abrasives for brittle materials such as SiC ceramic. It is easily realized to machine SiC ceramic in the ductile mode using W3.5 grit and a high efficiency, low cost and smooth surface with a surface roughness of Ra 2.4nm can be achieved.

  1. Exposure of epitaxial graphene on SiC(0001) to atomic hydrogen.

    Science.gov (United States)

    Guisinger, Nathan P; Rutter, Gregory M; Crain, Jason N; First, Phillip N; Stroscio, Joseph A

    2009-04-01

    Graphene films on SiC exhibit coherent transport properties that suggest the potential for novel carbon-based nanoelectronics applications. Recent studies suggest that the role of the interface between single layer graphene and silicon-terminated SiC can strongly influence the electronic properties of the graphene overlayer. In this study, we have exposed the graphitized SiC to atomic hydrogen in an effort to passivate dangling bonds at the interface, while investigating the results utilizing room temperature scanning tunneling microscopy.

  2. A route to strong p-doping of epitaxial graphene on SiC

    KAUST Repository

    Cheng, Yingchun

    2010-11-09

    The effects of Au intercalation on the electronic properties of epitaxialgraphenegrown on SiC{0001} substrates are studied using first principles calculations. A graphenemonolayer on SiC{0001} restores the shape of the pristine graphene dispersion, where doping levels between strongly n-doped and weakly p-doped can be achieved by altering the Au coverage. We predict that Au intercalation between the two C layers of bilayer graphenegrown on SiC{0001} makes it possible to achieve a strongly p-doped graphene state, where the p-doping level can be controlled by means of the Au coverage.

  3. The intensive terahertz electroluminescence induced by Bloch oscillations in SiC natural superlattices.

    Science.gov (United States)

    Sankin, Vladimir; Andrianov, Alexandr; Petrov, Alexey; Zakhar'in, Alexey; Lepneva, Ala; Shkrebiy, Pavel

    2012-10-09

    : We report on efficient terahertz (THz) emission from high-electric-field-biased SiC structures with a natural superlattice at liquid helium temperatures. The emission spectrum demonstrates a single line, the maximum of which shifts linearly with increases in bias field. We attribute this emission to steady-state Bloch oscillations of electrons in the SiC natural superlattice. The properties of the THz emission agree fairly with the parameters of the Bloch oscillator regime, which have been proven by high-field electron transport studies of SiC structures with natural superlattices.

  4. Kronig-Penney-like description for band gap variation in SiC polytypes

    Science.gov (United States)

    Backes, W. H.; de Nooij, F. C.; Bobbert, P. A.; van Haeringen, W.

    1996-02-01

    A one-dimensional Kronig-Penney-like model for envelope wave functions is presented to explain the band gap variation of SiC polytypes. In this model the envelope functions obey discontinuous boundary conditions. The electronic band gaps of cubic and several hexagonal and rhombohedral SiC polytypes are calculated. The polytypic superlattices are assumed to be stackings of differently sized and orientated cubic SiC segments. The empirical Choyke-Hamilton-Patrick relation is understood and deviating trends for small hexagonalities and rhombohedral modifications are predicted.

  5. Thermoelastic stresses in SiC single crystals grown by the physical vapor transport method

    Institute of Scientific and Technical Information of China (English)

    Zibing Zhang; Jing Lu; Qisheng Chen; V.Prasad

    2006-01-01

    A finite element-based thermoelastic anisotropic stress model for hexagonal silicon carbide polytype is developed for the calculation of thermal stresses in SiC crystals grown by the physical vapor transport method.The composite structure of the growing SiC crystal and graphite lid is considered in the model.The thermal expansion match between the crucible lid and SiC crystal is studied for the first time.The influence of thermal stress on the dislocation density and crystal quality iS discussed.

  6. 78 FR 21116 - Superior Supplier Incentive Program

    Science.gov (United States)

    2013-04-09

    ... Department of the Navy Superior Supplier Incentive Program AGENCY: Department of the Navy, DoD. ACTION... policy that will establish a Superior Supplier Incentive Program (SSIP). Under the SSIP, contractors that..., performance, quality, and business relations would be granted Superior Supplier Status (SSS). Contractors...

  7. superior en México

    Directory of Open Access Journals (Sweden)

    César Mureddu Torres

    2008-01-01

    Full Text Available El presente artículo desarrolla algunos de los retos que ha traído consigo el acceso a la información existente en la red de Internet y lo que ello supone. Se abordan principalmente las consecuencias de la presencia actual de una sociedad llamada del conocimiento, si se mantiene la confusión entre conocimiento e información. Por ello, la sola gestión de la información no puede ser tomada como definitoria respecto a la función de educación superior confiada a las universidades. Hacerlo sería cometer un error aún más grave que la confusión teórica entre los términos mencionados.

  8. D-region ion-neutral coupled chemistry (Sodankylä Ion Chemistry, SIC) within the Whole Atmosphere Community Climate Model (WACCM 4) - WACCM-SIC and WACCM-rSIC

    Science.gov (United States)

    Kovács, Tamás; Plane, John M. C.; Feng, Wuhu; Nagy, Tibor; Chipperfield, Martyn P.; Verronen, Pekka T.; Andersson, Monika E.; Newnham, David A.; Clilverd, Mark A.; Marsh, Daniel R.

    2016-09-01

    This study presents a new ion-neutral chemical model coupled into the Whole Atmosphere Community Climate Model (WACCM). The ionospheric D-region (altitudes ˜ 50-90 km) chemistry is based on the Sodankylä Ion Chemistry (SIC) model, a one-dimensional model containing 307 ion-neutral and ion recombination, 16 photodissociation and 7 photoionization reactions of neutral species, positive and negative ions, and electrons. The SIC mechanism was reduced using the simulation error minimization connectivity method (SEM-CM) to produce a reaction scheme of 181 ion-molecule reactions of 181 ion-molecule reactions of 27 positive and 18 negative ions. This scheme describes the concentration profiles at altitudes between 20 km and 120 km of a set of major neutral species (HNO3, O3, H2O2, NO, NO2, HO2, OH, N2O5) and ions (O2+, O4+, NO+, NO+(H2O), O2+(H2O), H+(H2O), H+(H2O)2, H+(H2O)3, H+(H2O)4, O3-, NO2-, O-, O2, OH-, O2-(H2O), O2-(H2O)2, O4-, CO3-, CO3-(H2O), CO4-, HCO3-, NO2-, NO3-, NO3-(H2O), NO3-(H2O)2, NO3-(HNO3), NO3-(HNO3)2, Cl-, ClO-), which agree with the full SIC mechanism within a 5 % tolerance. Four 3-D model simulations were then performed, using the impact of the January 2005 solar proton event (SPE) on D-region HOx and NOx chemistry as a test case of four different model versions: the standard WACCM (no negative ions and a very limited set of positive ions); WACCM-SIC (standard WACCM with the full SIC chemistry of positive and negative ions); WACCM-D (standard WACCM with a heuristic reduction of the SIC chemistry, recently used to examine HNO3 formation following an SPE); and WACCM-rSIC (standard WACCM with a reduction of SIC chemistry using the SEM-CM method). The standard WACCM misses the HNO3 enhancement during the SPE, while the full and reduced model versions predict significant NOx, HOx and HNO3 enhancements in the mesosphere during solar proton events. The SEM-CM reduction also identifies the important ion-molecule reactions that affect the partitioning of

  9. Fracture strength and principal stress fields during crush testing of the SiC layer in TRISO-coated fuel particles

    Science.gov (United States)

    Davis, Brian C.; Ward, Logan; Butt, Darryl P.; Fillery, Brent; Reimanis, Ivar

    2016-08-01

    Diametrical compression testing is an important technique to evaluate fracture properties of the SiC layer in TRISO-coated nuclear fuel particles. This study was conducted to expand the understanding and improve the methodology of the test. An analytic solution and multiple FEA models are used to determine the development of the principal stress fields in the SiC shell during a crush test. An ideal fracture condition where the diametrical compression test best mimics in-service internal pressurization conditions was discovered. For a small set of empirical data points, results from different analysis methodologies were input to an iterative Weibull equation set to determine characteristic strength (332.9 MPa) and Weibull modulus (3.80). These results correlate well with published research. It is shown that SiC shell asphericity is currently the limiting factor of greatest concern to obtaining repeatable results. Improvements to the FEA are the only apparent method for incorporating asphericity and improving accuracy.

  10. Synthesis of MWCNTs Using Monometallic and Bimetallic Combinations of Fe, Co and Ni Catalysts Supported on Nanometric SiC via TCVD

    Directory of Open Access Journals (Sweden)

    F. Shahi

    2015-04-01

    Full Text Available Nanometric Carbid Silicon (SiC supported monometallic and bimetallic catalysts containing Fe, Co, Ni transition metals were prepared by wet impregnation method. Multiwall carbon nanotubes (MWCNTs were synthesized over the prepared catalysts from catalytic decomposition of acetylene at 850°C by thermal chemical vapor deposition (TCVD technique. The synthesized nanomaterials (catalysts and CNTs were characterized by X-ray diffraction (XRD, Scanning Electron Microscopy (SEM, Transmission Electron Microscopy (TEM and Raman spectroscopy. In this paper, using of nanometric SiC powder as catalyst support was examined and the effect of applied catalyst type on characteristics of grown CNTs was investigated. The results revealed that iron, cobalt and nickel are in oxide, cobalt ferrite (CoFe2O4 and nickel ferrite (NiFe2O4 forms and nanometric SiC powder can be applied as an appropriate catalyst support in CNT growth process. It was observed that the produced CNTs on bimetallic Fe-Co possess smaller average diameter, less amorphous carbon and denser morphology compared to other binary metallic combinations. It was found that the catalytic activity of bimetallic composition decreased in the order of Fe-Co> Fe-Ni> Co-Ni. Furthermore, the monometallic Fe catalyst has the most catalytic activity compared to monometallic Co and Ni catalysts.

  11. Isolated abscess in superior rectus muscle in a child

    Directory of Open Access Journals (Sweden)

    Sushank Ashok Bhalerao

    2015-01-01

    Full Text Available Pyomyositis is a primary bacterial infection of striated muscles nearly always caused by Staphylococcus aureus. Development of the intramuscular abscess involving the extra-ocular muscles (EOMs remains an extremely rare process. We herein present a case of isolated EOM pyomyositis involving superior rectus muscle in a 2-year male child who was referred with complaints of swelling in left eye (LE and inability to open LE since last 1-month. Orbital computed tomography (CT scan showed a well-defined, hypo-dense, peripheral rim-enhancing lesion in relation to left superior rectus muscle suggestive of left superior rectus abscess. The abscess was drained through skin approach. We concluded that pyomyositis of EOM should be considered in any patient presenting with acute onset of orbital inflammation and characteristic CT or magnetic resonance imaging features. Management consists of incision and drainage coupled with antibiotic therapy.

  12. Is Personalized Communication Superior? Personalization and Consumers’ Characteristics

    NARCIS (Netherlands)

    Maslowska, E.; Smit, E.G.; van den Putte, B.

    2011-01-01

    Personalized communication has become a very popular marketing strategy, but the research on its effectiveness is still limited. This study examined the effectiveness of personalized digital newsletters in terms of increased attention, evaluation, attitude, and intention. Participants (N = 124) were

  13. Superior calcium homeostasis of extraocular muscles.

    Science.gov (United States)

    Zeiger, Ulrike; Mitchell, Claire H; Khurana, Tejvir S

    2010-11-01

    Extraocular muscles (EOMs) are a unique group of skeletal muscles with unusual physiological properties such as being able to undergo rapid twitch contractions over extended periods and escape damage in the presence of excess intracellular calcium (Ca(2+)) in Duchenne's muscular dystrophy (DMD). Enhanced Ca(2+) buffering has been proposed as a contributory mechanism to explain these properties; however, the mechanisms are not well understood. We investigated mechanisms modulating Ca(2+) levels in EOM and tibialis anterior (TA) limb muscles. Using Fura-2 based ratiometric Ca(2+) imaging of primary myotubes we found that EOM myotubes reduced elevated Ca(2+) ˜2-fold faster than TA myotubes, demonstrating more efficient Ca(2+) buffering. Quantitative PCR (qPCR) and western blotting revealed higher expression of key components of the Ca(2+) regulation system in EOM, such as the cardiac/slow isoforms sarcoplasmic Ca(2+)-ATPase 2 (Serca2) and calsequestrin 2 (Casq2). Interestingly EOM expressed monomeric rather than multimeric forms of phospholamban (Pln), which was phosphorylated at threonine 17 (Thr17) but not at the serine 16 (Ser16) residue. EOM Pln remained monomeric and unphosphorylated at Ser16 despite protein kinase A (PKA) treatment, suggesting differential signalling and modulation cascades involving Pln-mediated Ca(2+) regulation in EOM. Increased expression of Ca(2+)/SR mRNA, proteins, differential post-translational modification of Pln and superior Ca(2+) buffering is consistent with the improved ability of EOM to handle elevated intracellular Ca(2+) levels. These characteristics provide mechanistic insight for the potential role of superior Ca(2+) buffering in the unusual physiology of EOM and their sparing in DMD.

  14. Fabrication of mullite-bonded porous SiC ceramics from multilayer-coated SiC particles through sol-gel and in-situ polymerization techniques

    Science.gov (United States)

    Ebrahimpour, Omid

    In this work, mullite-bonded porous silicon carbide (SiC) ceramics were prepared via a reaction bonding technique with the assistance of a sol-gel technique or in-situ polymerization as well as a combination of these techniques. In a typical procedure, SiC particles were first coated by alumina using calcined powder and alumina sol via a sol-gel technique followed by drying and passing through a screen. Subsequently, they were coated with the desired amount of polyethylene via an in-situ polymerization technique in a slurry phase reactor using a Ziegler-Natta catalyst. Afterward, the coated powders were dried again and passed through a screen before being pressed into a rectangular mold to make a green body. During the heating process, the polyethylene was burnt out to form pores at a temperature of about 500°C. Increasing the temperature above 800°C led to the partial oxidation of SiC particles to silica. At higher temperatures (above 1400°C) derived silica reacted with alumina to form mullite, which bonds SiC particles together. The porous SiC specimens were characterized with various techniques. The first part of the project was devoted to investigating the oxidation of SiC particles using a Thermogravimetric analysis (TGA) apparatus. The effects of particle size (micro and nano) and oxidation temperature (910°C--1010°C) as well as the initial mass of SiC particles in TGA on the oxidation behaviour of SiC powders were evaluated. To illustrate the oxidation rate of SiC in the packed bed state, a new kinetic model, which takes into account all of the diffusion steps (bulk, inter and intra particle diffusion) and surface oxidation rate, was proposed. Furthermore, the oxidation of SiC particles was analyzed by the X-ray Diffraction (XRD) technique. The effect of different alumina sources (calcined Al2O 3, alumina sol or a combination of the two) on the mechanical, physical, and crystalline structure of mullite-bonded porous SiC ceramics was studied in the

  15. Switching Investigations on a SiC MOSFET in a TO-247 Package

    DEFF Research Database (Denmark)

    Anthon, Alexander; Hernandez Botella, Juan Carlos; Zhang, Zhe

    2014-01-01

    This paper deals with the switching behavior of a SiC MOSFET in a TO-247 package. Based on simulations, critical parasitic inductances in the circuit layout are analyzed and their effect on the switching losses highlighted. Especially the common source inductance, a critical parameter in a TO-247...... package, has a major influence on the switching energy. Crucial design guidelines for an improved double pulse test circuit are introduced which are used for practical investigations on the switching behavior. Switching energies of a SiC MOSFET in a TO-247 package is measured depending on varying gate...... resistance and loop inductances. With total switching energy of 340.24 μJ, the SiC MOSFET has more than six times lower switching losses than a regular Si IGBT. Implementing the SiC switches in a 3 kW T-Type inverter topology, efficiency improvements of 0.8 % are achieved and maximum efficiency of 97...

  16. Selective Growth of Graphene by Pulsed Laser Annealing Ion Implanted SiC

    Science.gov (United States)

    Berke, Kara; Wang, Xiaotie; Rudawski, Nick; Venkatachalam, Dinesh; Fridmann, Joel; Gila, Brent; Ren, Fan; Elliman, Rob; Hebard, Arthur; Appleton, Bill

    2014-03-01

    We report a method for site-selective graphene growth on SiC for direct nano-scale patterning of graphene. Crystalline SiC was implanted with Si and C ions to amorphize the sample surface, then subjected to pulsed laser annealing (PLA); graphene growth occurred only where ions were implanted. PLA parameters including the fluence, number of pulses, and annealing environment were investigated to optimize the growth process. Our previous work involving Au, Cu, and Ge implants in SiC suggested that both the implanted species and surface amorphization affect graphene growth. In this work, we show that surface amorphization alone, without the presence of foreign ionic species, can be used with PLA to create site-selective graphene growth on SiC. Samples were characterized using Raman spectroscopy and cross-sectional transmission electron microscopy. also affiliated with Raith USA, Incorporated.

  17. Numerical design of SiC bulk crystal growth for electronic applications

    Science.gov (United States)

    Wejrzanowski, T.; Grybczuk, M.; Tymicki, E.; Kurzydlowski, K. J.

    2014-10-01

    Presented study concerns numerical simulation of Physical Vapor Transport (PVT) growth of bulk Silicon Carbide (SiC) crystals. Silicon Carbide is a wide band gap semiconductor, with numerous applications due to its unique properties. Wider application of SiC is limited by high price and insufficient quality of the product. Those problems can be overcame by optimizing SiC production methods. Experimental optimization of SiC production is expensive because it is time consuming and requires large amounts of energy. Numerical modeling allows to learn more about conditions inside the reactor and helps to optimize the process at much lower cost. In this study several simulations of processes with different reactor geometries were presented along with discussion of reactor geometry influence on obtained monocrystal shape and size.

  18. Fabrication of SiC nanowire thin-film transistors using dielectrophoresis

    Institute of Scientific and Technical Information of China (English)

    Dai Zhenqing; Zhang Liying; Chen Changxin; Qian Bingjian; Xu Dong; Chen Haiyan; Wei Liangming; Zhang Yafei

    2012-01-01

    The selection of solvents for SiC nanowires (NWs) in a dielectrophoretic process is discussed theoretically and experimentally.From the viewpoints of dielectrophoresis force and torque,volatility,as well as toxicity,isopropanol (IPA) is considered as a proper candidate.By using the dielectrophoretic process,SiC NWs are aligned and NW thin films are prepared.The densities of the aligned SiC NWs are 2 μm-1,4 μm-1,6 μm-1,which corresponds to SiC NW concentrations of 0.1 μg/μL,0.3μg/μL and 0.5 μg/μL,respectively.Thin-film transistors are fabricated based on the aligned SiC NWs of 6 μm-1.The mobility of a typical device is estimated to be 13.4 cm2/(V.s).

  19. SUPERPOLISHED SI COATED SIC OPTICS FOR RAPID MANUFACTURE OF LARGE APERTURE UV AND EUV TELESCOPES Project

    Data.gov (United States)

    National Aeronautics and Space Administration — SSG/Tinsley proposes an innovative optical manufacturing process that will allow the advancement of state-of-the-art Silicon Carbide (SiC) mirrors for large aperture...

  20. Ultra-Lightweight, High Efficiency Silicon-Carbide (SIC) Based Power Electronic Converters Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This Small Business of Innovation Research Phase I proposal seeks to investigate and prove the feasibility of developing highly efficient, ultra-lightweight SiC...

  1. Large area SiC coating technology of RBSC for semiconductor processing component

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Yeon; Kim, Weon Ju

    2001-06-01

    As the semiconductor process is developed for the larger area wafer and the larger-scale integration, the processing fixtures are required to have excellent mechanical and high temperature properties. This highlights the importance of silicon carbide-based materials as a substitute for quartz-based susceptors. In this study, SiC coating technology on reaction sintered (RS) SiC with thickness variation of +/- 10% within a diameter of 8 inch by low pressure chemical vapor deposition has been developed for making a plate type SiC fixture such as heater, baffle, etc., with a diameter of 12 inch. Additionally, a state of art on fabrication technology and products of the current commercial SiC fixtures has been described.

  2. Carbon Nanotube (CNT) and Carbon Fiber Reinforced SiC Optical Components Project

    Data.gov (United States)

    National Aeronautics and Space Administration — M Cubed has developed and patented technology to make carbon fiber reinforced SiC composites and components. In addition, the feasibility of doubling the toughness...

  3. Visible Blind SiC Array with Low Noise Readout Project

    Data.gov (United States)

    National Aeronautics and Space Administration — To date, we have (i) designed and fabricated both common cathode and common anode SiC detector arrays; (ii) designed and fabricated the detector packaging (FPA), and...

  4. Optical properties in 1D photonic crystal structure using Si/C60 multilayers

    Institute of Scientific and Technical Information of China (English)

    Chen Jing; Tang Jiyu; Han Peide; Chen Junfang

    2009-01-01

    The feasibility of using Si/C60 mulfilayer films as one-dimensional(1D)photonie band gap crystals was investigated by theoretical calculations using a transfer matrix method(TMM).The response has been studied both within and out of the periodic plane of Si/C60 multilayers.It is found that Si/C60 multilayer films show incomplete photonic band gap(PBG)behavior in the visible frequency range.The fabricated Si/C60 multilayers with two pairs of 70 am C60 and 30 nm Si layers exhibit a PBG at central wavelength of about 600 nm.and the highest reflectivity call reach 99%.As a consequence,this photonic crystal may be important for fabricating a photonic crystal with an incomplete band gap in the visible frequency range.

  5. Identification of -SiC surrounded by relatable surrounding diamond medium using weak Raman surface phonons

    Indian Academy of Sciences (India)

    Mohan Kumar Kuntumalla; Harish Ojha; Vadali Venkata Satya Siva Srikanth

    2013-11-01

    It is difficult to detect -SiC using micro-Raman scattering, if it is surrounded by carbon medium. Here, -SiC is identified in the presence of a relatable surrounding diamond medium using subtle, but discernible Raman surface phonons. In this study, diamond/-SiC nanocomposite thin film system is considered in which nanosized -SiC crystallites are surrounded by a relatable nanodiamond medium that leads to the appearance of a weak Raman surface phonon band at about 855 cm-1. Change in the nature of the surrounding material structure and its volume content when relatable, will affect the resultant Raman response of -SiC phase as seen in the present case of diamond/-SiC nanocomposite thin films.

  6. Decentralized Nonlinear Controller Based SiC Parallel DC-DC Converter Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal is aimed at demonstrating the feasibility of a Decentralized Control based SiC Parallel DC-DC Converter Unit (DDCU) with targeted application for...

  7. Breakthrough in Power Electronics from SiC: May 25, 2004 - May 31, 2005

    Energy Technology Data Exchange (ETDEWEB)

    Marckx, D. A.

    2006-03-01

    This report explores the premise that silicon carbide (SiC) devices would reduce substantially the cost of energy of large wind turbines that need power electronics for variable speed generation systems.

  8. Hybrid surface structures for efficiency enhancement of fluorescent SiC for white LED application

    DEFF Research Database (Denmark)

    Ou, Yiyu; Xiong, Meng; Lu, Weifang

    Hybrid structures contain structures in both micro- and nano-meter scale have been fabricated on fluorescent SiC by applying a fast fabrication method. Luminescence efficiency of f-SiC was enhanced significantly compared with normal nanostructures....

  9. Toxicity assessment of SiC nanofibers and nanorods against bacteria.

    Science.gov (United States)

    Szala, Mateusz; Borkowski, Andrzej

    2014-02-01

    In the present study, evidence of the antibacterial effects of silicon carbide (SiC) nanofibers (NFSiC) and nanorods (NRSiC) obtained by combustion synthesis has been presented. It has been shown that the examined bacteria, Pseudomonas putida, could bind to the surface of the investigated SiC nanostructures. The results of respiration measurements, dehydrogenase activity measurements, and evaluation of viable bacteria after incubation with NFSiC and NRSiC demonstrated that the nanostructures of SiC affect the growth and activity of the bacteria examined. The direct count of bacteria stained with propidium iodide after incubation with SiC nanostructures revealed that the loss of cell membrane integrity could be one of the main effects leading to the death of the bacteria.

  10. Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) Power Processing Unit (PPU) for Hall Effect...

  11. Ultra-Lightweight, High Efficiency Silicon-Carbide (SIC) Based Power Electronic Converters Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In Phase I of this project, APEI, Inc. proved the feasibility of creating ultra-lightweight power converters (utilizing now emerging silicon carbide [SiC] power...

  12. Synthesis of One-Dimensional SiC Nanostructures from a Glassy Buckypaper

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Mengning; Star, Alexander

    2013-02-21

    A simple and scalable synthetic strategy was developed for the fabrication of one-dimensional SiC nanostructures - nanorods and nanowires. Thin sheets of single-walled carbon nanotubes (SWNTs) were prepared by vacuum filtration and were washed repeatedly with sodium silicate (Na₂SiO₃) solution. The resulting “glassy buckypaper” was heated at 1300 - 1500 °C under Ar/H₂ to allow a solid state reaction between C and Si precursors to form a variety of SiC nanostructures. The morphology and crystal structures of SiC nanorods and nanowires were characterized using scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), energy dispersive xray spectroscopy (EDX), electron diffraction (ED) and x-ray diffraction (XRD) techniques. Furthermore, electrical conductance measurements were performed on SiC nanorods, demonstrating their potential applications in high-temperature sensors and control systems.

  13. Current Status in Layered Ternary Carbide Ti3SiC2, a Review

    Institute of Scientific and Technical Information of China (English)

    H.B.Zhang; Y.W.Bao; Y.C.Zhou

    2009-01-01

    This article provides a review of current research activities that concentrate on Ti3SiC2. We begin with an overview of the crystal and electronic structures, which are the basis to understand this material. Followings are the synthetic strategies that have been exploited to achieve, and the formation mechanism of Ti3SiC2. Then we devote much attentions to the mechanical properties and oxidation/hot corrosion behaviors of Ti3SiC2 as well as some advances achieved recently. At the end of this paper, we elaborate on some new discoveries in the Ti3SiC2 system, and also give a brief discussion focused on the "microstructure -property" relationship.

  14. Study of indentation induced cracks in MoSi2-reaction bonded SiC ceramics

    Indian Academy of Sciences (India)

    O P Chakrabarti; P K Das; S Mondal

    2001-04-01

    MoSi2–RBSC composite samples were prepared by infiltration of Si–2 at.% Mo melt into a preform of commercial SiC and petroleum coke powder. The infiltrated sample had a density > 92% of the theoretical density (TD) and microstructurally contained SiC, MoSi2, residual Si and unreacted C. The material was tested for indentation fracture toughness at room temperature with a Vicker’s indenter and KIC was found to be 4.42 MPa√m which is around 39% higher than the conventional RBSC material. Enhancement in indentation fracture toughness is explained in terms of bowing of propagating cracks through MoSi2/SiC interface which is under high thermal stress arising from the thermal expansion mismatch between MoSi2 and SiC.

  15. Light and heavy element isotopic compositions of mainstream SiC grains.

    Energy Technology Data Exchange (ETDEWEB)

    Amari, S.; Clayton, R. N.; Davis, A. M.; Lewis, R. S.; Pellin, M. J.

    1999-02-03

    Although a variety of types of pre-solar SiC grains have been classified by their C, N, and Si isotopic composition, the majority of such grains are so-called mainstream grains and are believed to have come from asymptotic giant branch stars [1]. We have previously reported the Mo isotopic compositions of presolar SiC grains whose C, N, and Si isotopic compositions were not known [2]. Since most presolar SiC grains fall in the mainstream group, we assumed that these grains were mainstream. The excellent match of the Mo isotopic data with expectations for nucleosynthesis in AGB stars was consistent with this identification. In order to better understand the distribution of isotopic compositions in presolar grains, we have begun to measure heavy element isotopic compositions of presolar SiC grains of known C, N and Si isotopic composition.

  16. Light extraction efficiency enhancement for fluorescent SiC based white light-emitting diodes

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

    fluorescent Boron-Nitrogen co-doped 6H SiC is optimized in terms of source material, growth condition, dopant concentration, and carrier lifetime by using photoluminescence, pump-probe spectroscopy etc. The internal quantum efficiency is measured and the methods to increase the efficiency have been explored......Fluorescent SiC based white light-emitting diodes(LEDs) light source, as an innovative energy-efficient light source, would even have longer lifetime, better light quality and eliminated blue-tone effect, compared to the current phosphor based white LED light source. In this paper, the yellow....... At a device level, the focus is on improving the light extraction efficiency due to the rather high refractive index of SiC by nanostructuring the surface of SiC. Both periodic nanostructures made by e-beam lithography and nanosphere lithography and random nanostructures made by self-assembled Au nanosphere...

  17. FABRICATION AND MATERIAL ISSUES FOR THE APPLICATION OF SiC COMPOSITES TO LWR FUEL CLADDING

    Directory of Open Access Journals (Sweden)

    WEON-JU KIM

    2013-08-01

    Full Text Available The fabrication methods and requirements of the fiber, interphase, and matrix of nuclear grade SiCf/SiC composites are briefly reviewed. A CVI-processed SiCf/SiC composite with a PyC or (PyC-SiCn interphase utilizing Hi-Nicalon Type S or Tyranno SA3 fiber is currently the best combination in terms of the irradiation performance. We also describe important material issues for the application of SiC composites to LWR fuel cladding. The kinetics of the SiC corrosion under LWR conditions needs to be clarified to confirm the possibility of a burn-up extension and the cost-benefit effect of the SiC composite cladding. In addition, the development of end-plug joining technology and fission products retention capability of the ceramic composite tube would be key challenges for the successful application of SiC composite cladding.

  18. High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications

    Energy Technology Data Exchange (ETDEWEB)

    Whitaker, Mr. Bret [APEI, Inc.; Cole, Mr. Zach [APEI, Inc.; Passmore, Mr. Brandon [APEI, Inc.; Mcnutt, Tyler [APEI, Inc.; Lostetter, Dr. Alex [APEI, Inc.; Ericson, Milton Nance [ORNL; Frank, Steven [ORNL; Britton Jr, Charles L [ORNL; Marlino, Laura D [ORNL; Mantooth, Alan [University of Arkansas; Francis, Matt [APEI, Inc.; Lamichhane, Ranjan [APEI, Inc.; Shepherd, Paul [APEI, Inc.; Glover, Michael [APEI, Inc.

    2014-01-01

    This paper presents a high-temperature capable intelligent power module that contains SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter (Fig. 1) to determine the performance of the module in a system level application. The converter was operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The peak efficiency was found to be 97.5% at 2.9 kW.

  19. Conversion of wood flour/SiO2/phenolic composite to porous SiC ceramic containing SiC whiskers

    Directory of Open Access Journals (Sweden)

    Li Zhong

    2013-01-01

    Full Text Available A novel wood flour/SiO2/phenolic composite was chosen to be converted into porous SiC ceramic containing SiC whiskers via carbothermal reduction. At 1550°C the composite is converted into porous SiC ceramic with pore diameters of 10~40μm, and consisting of β-SiC located at the position of former wood cell walls. β-SiC wire-like whiskers of less than 50 nm in diameter and several tens to over 100 μm in length form within the pores. The surface of the resulting ceramic is coated with β-SiC necklace-like whiskers with diameters of 1~2μm.

  20. PERFORMANCE STUDY OF TOOL MATERIALS AND OPTIMIZATION OF PROCESS PARAMETERS DURING EDM ON ZrB2-SiC COMPOSITE THROUGH PARTICLE SWARM OPTIMIZATION ALGORITHM

    Directory of Open Access Journals (Sweden)

    S.SIVASANKAR

    2013-01-01

    Full Text Available This paper deals with optimization of EDM of ZrB2-SiC composite using Particle swarm optimization (PSO. In this work ZrB2 with different volume proportions of SiC (15, 20, 25 and 30% are selected as workpiece. ZrB2– SiC ultra high temperature ceramics exhibited an excellent thermal-oxidative and configurationally stable under supersonic conditions, which suggests they are potential candidates for leading edges. Results indicate that ZrB2–SiC can maintain the high oxidation resistance coupled with configurationally stable at temperatures lower than that point which results in significant softening and degradation of the oxide scale, and that point will bethe temperature limit for UHTC.It is a candidate for high temperature aerospace applications such as hypersonic flight or rocket propulsion systems. To expand its area of applications, machining is mandatory. Due to high strength and hardness of ZrB2 mechanical machining is very difficult or even impossible. Electrical discharge machining is promising technology to machine ceramic components of complex shape with high-dimensional accuracy and good surface roughness. In this investigation the influence of SiC over the machinability is carriedout. Input parameters are pulse on time, pulse off time and tool materials (graphite, titanium niobium, tantalum and tungsten. Pulse on time and pulse off time are kept at three different levels. Objective is to maximize the material removal rate (MRR and to minimize the roundness, surface roughness (SR, tool wear rate (TWR,Overcut and taper angle during EDM of hot pressed ZrB2-SiC composite. In general Desirability Functional Analysis (DFA is used to combine multiple quality characteristics into a single performance statistics. While combining the quality characteristics, weight should be assigned to each response. For this problem, unequalweights are assigned using particle swarm optimization (PSO. Interaction of pulse on time with tool material is

  1. Escuela Superior de Palos Verdes

    Directory of Open Access Journals (Sweden)

    Neutra, Richard J.

    1965-02-01

    Full Text Available Before initiating the building operations for the «Palos Verdes» School, the site was divided into two large horizontal surfaces, at different levels. The lower one served to accommodate the playing fields, a car park, the physical training building, and shop and ancillary buildings. On the higher of these two surfaces, and to the West of the access road, there is a car park and also the building and plot of ground devoted to agricultural technology, as well as the literary studies and general purpose buildings. As a complement to these, there is a series of blocks, arranged in parallel rows, which house the administrative offices, the art school, the craft's school, the general classrooms, and those devoted to higher education. The fascinating aspect of this school is the outstanding penetration of the architect's mind into the essential function of the project. Its most evident merit is the sense of comradeship and harmony that permeates the whole architectural manifold.Antes de construir el complejo escolar «Palos Verdes» se comenzó por crear, en el terreno, dos grandes mesetas a niveles diferentes. Sobre el inferior se organizaron: los campos de juegos, de deportes, un aparcamiento, el edificio para educación física y los destinados a tiendas y servicios. Sobre la meseta superior, al oeste de la vía de acceso, se dispuso un aparcamiento y el edificio y campo para adiestramiento agrícola; al este, otro aparcamiento, el edificio dedicado a materias literarias, y el destinado a usos múltiples. Completan las instalaciones de la escuela una serie de bloques paralelos: la administración, la escuela de arte, las clases de trabajos manuales, las aulas de enseñanzas generales, y las de los cursos superiores. Lo fascinante de este complejo escolar es la perfecta y magistral compenetración del arquitecto con el tema proyectado, y su mayor mérito, la sensación de cordialidad y armonía con el ambiente.

  2. Morphological control of porous SiC templated by As-synthesized form of mesoporous silica.

    Science.gov (United States)

    Selvan, Sakthivel Tamil; Aldeyab, Salem S; Zaidi, S M Javaid; Arivuoli, Dakshinamoorthy; Ariga, Katsuhiko; Mori, Toshiyuki; Vinu, Ajayan

    2011-08-01

    Porous silicon carbide with fiber like morphology was successfully prepared via a hard templating approach using as-synthesized form of mesoporous silica SBA-15 as template and sucrose as carbon precursor. The obtained materials have been characterized by various sophisticated techniques such as XRD, nitrogen adsorption, HRTEM, HRSEM, FT-IR and TGA. The XRD and the nitrogen adsorption results revealed that the materials are highly crystalline and exhibit porous structure with excellent textural characteristics. It has been demonstrated that the morphology of the materials can be finely controlled from rod shaped morphology to fiber like nanostructures by the simple adjustment of the reaction time from 5 to 12 h at the reaction temperature of 1300 degrees C. The reaction time of 12 h at 1300 degrees C was found to be the best condition to obtain highly crystalline nanofiber like morphology. The obtained materials display beautiful nanofiber morphology which has the diameter of 20 to 60 nm and a length of 7 to 10 microm which is much longer than the previously reported SiC nanofibers.

  3. Optimization of tribological performance of SiC embedded composite coating via Taguchi analysis approach

    Science.gov (United States)

    Maleque, M. A.; Bello, K. A.; Adebisi, A. A.; Akma, N.

    2017-03-01

    Tungsten inert gas (TIG) torch is one of the most recently used heat source for surface modification of engineering parts, giving similar results to the more expensive high power laser technique. In this study, ceramic-based embedded composite coating has been produced by precoated silicon carbide (SiC) powders on the AISI 4340 low alloy steel substrate using TIG welding torch process. A design of experiment based on Taguchi approach has been adopted to optimize the TIG cladding process parameters. The L9 orthogonal array and the signal-to-noise was used to study the effect of TIG welding parameters such as arc current, travelling speed, welding voltage and argon flow rate on tribological response behaviour (wear rate, surface roughness and wear track width). The objective of the study was to identify optimal design parameter that significantly minimizes each of the surface quality characteristics. The analysis of the experimental results revealed that the argon flow rate was found to be the most influential factor contributing to the minimum wear and surface roughness of the modified coating surface. On the other hand, the key factor in reducing wear scar is the welding voltage. Finally, a convenient and economical Taguchi approach used in this study was efficient to find out optimal factor settings for obtaining minimum wear rate, wear scar and surface roughness responses in TIG-coated surfaces.

  4. Investigation on the Short Circuit Safe Operation Area of SiC MOSFET Power Modules

    DEFF Research Database (Denmark)

    Reigosa, Paula Diaz; Luo, Haoze; Iannuzzo, Francesco

    2016-01-01

    This paper gives a better insight of the short circuit capability of state-of-the-art SiC MOSFET power modules rated at 1.2 kV by highlighting the physical limits under different operating conditions. Two different failure mechanisms have been identified, both reducing the short-circuit capability......) of the studied SiC MOSFET power modules is formulated based on the two proposed criteria....

  5. drs (Distantly Related sic) Gene Polymorphisms among emm12-Type Streptococcus pyogenes Isolates

    OpenAIRE

    Brandt, Claudia M.; Haase, Gerhard; Spellerberg, Barbara; Holland, Regina; Lütticken, Rudolf

    2003-01-01

    Twenty-eight emm12-type Streptococcus pyogenes isolates from patients with invasive and noninvasive infections or from asymptomatic carriers were genetically typed. Sequencing of drs (distantly related sic [streptococcal inhibitor of complement]) genes identified two novel alleles and revealed a polymorphism for drs similar to that of sic. No association was observed between the five different drs alleles and the five restriction patterns of the vir regulon for the isolates studied. These dat...

  6. Passivation of surface-nanostructured f-SiC and porous SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang; Ou, Yiyu

    The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

  7. Powder metallurgical processing of a SiC particle reinforced Al-6wt.%Fe alloy

    OpenAIRE

    Staniek, G.; Lehnert, F.; Peters, M; Bunk, W.; Kaysser, W.

    1993-01-01

    Discontinuously reinforced aluminum alloys for elevated temperatures with a matrix hardened by intermetallic phases generally have to be produced by powder metallurgy because of their high content of alloying elements. The objective of this investigation was the evaluation of powder metallurgical processing for an A16Fe powder alloy containing various fractions and volume contents of SiC particles. During processing, the effect of powder mixing on SiC particle distribution in the extruded pro...

  8. SiC nanocrystals as Pt catalyst supports for fuel cell applications

    DEFF Research Database (Denmark)

    Dhiman, Rajnish; Morgen, Per; Skou, E.M.

    2013-01-01

    A robust catalyst support is pivotal to Proton Exchange Membrane Fuel Cells (PEMFCs) to overcome challenges such as catalyst support corrosion, low catalyst utilization and overall capital cost. SiC is a promising candidate material which could be applied as a catalyst support in PEMFCs. Si...... based catalysts (BASF & HISPEC). These promising results signal a new era of SiC based catalysts for fuel cell applications. © The Royal Society of Chemistry 2013....

  9. Characterization and functionalization by sol–gel route of SiC foams

    OpenAIRE

    Mollicone, Jessica; Ansart, Florence; Lenormand, Pascal; Duployer, Benjamin; Tenailleau, Christophe; Jérôme VICENTE (LEREPS-GRES)

    2014-01-01

    International audience; Ceramic foam materials are commonly used for various applications, including catalyst supports or solar receivers. SiC foams are good candidates for the latter application as solar receivers. Its efficiency is directly related to the geometry, which can be evidenced by X-ray microtomography, and optical properties of the receiver. A promising route to add functionalities with homogenous and adhering oxide coatings onto complex SiC foams in a single step process is prop...

  10. Laser annealing of sputter-deposited -SiC and -SiCN films

    Indian Academy of Sciences (India)

    M A Fraga; M Massi; I C Oliveira; F D Origo; W Miyakawa

    2011-12-01

    This work describes the laser annealing of -SiC and -SiCN films deposited on (100) Si and quartz substrates by RF magnetron sputtering. Two samples of -SiCN thin films were produced under different N2/Ar flow ratios. Rutherford backscattering spectroscopy (RBS), Raman analysis and Fourier transform infrared spectrometry (FTIR) techniques were used to investigate the composition and bonding structure of as-deposited and laser annealed SiC and SiCN films.

  11. Manufacturing: SiC Power Electronics for Variable Frequency Motor Drives

    Energy Technology Data Exchange (ETDEWEB)

    Horowitz, Kelsey A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Bench Reese, Samantha R [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Remo, Timothy W [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2017-08-15

    This brochure, published as an annual research highlight of the Clean Energy Manufacturing Analysis Center (CEMAC), summarizes CEMAC analysis of silicon carbide (SiC) power electronics for variable frequency motor drives. The key finding presented is that variations in manufacturing expertise, yields, and access to existing facilities impact regional costs and manufacturing location decisions for SiC ingots, wafers, chips, and power modules more than do core country-specific factors such as labor and electricity costs.

  12. Scalable SiC Power Switches for Applications in More Electric Vehicles (Preprint)

    Science.gov (United States)

    2007-06-01

    AFRL-PR-WP-TP-2007-237 SCALABLE SiC POWER SWITCHES FOR APPLICATIONS IN MORE ELECTRIC VEHICLES (PREPRINT) Michael S. Mazzola, Douglas Seale...SWITCHES FOR APPLICATIONS IN MORE ELECTRIC VEHICLES (PREPRINT) 5c. PROGRAM ELEMENT NUMBER 63175C 5d. PROJECT NUMBER 1168 5e. TASK NUMBER 13 6...Standard Form 298 (Rev. 8-98) Prescribed by ANSI Std. Z39-18 1 Scalable SiC Power Switches for Applications in More Electric Vehicles Abstract

  13. Evaluation of surface recombination of SiC for development of bipolar devices

    Science.gov (United States)

    Kato, Masashi

    2016-09-01

    Ultra-high voltage power devices are employed for management of power networks. Si-based semiconductor devices have been developed for such the power devices. Maximum breakdown voltages of Si devices are of the order of kV. When the voltage in the power network was higher than the breakdown voltage of the devices, the devices were connected in series. The series connection introduces high resistance and power loss. To overcome this series resistance problem, it has been suggested that utilization of silicon carbide (SiC) devices. SiC has much higher breakdown electric field than Si, and thus high voltage in the power networks can be managed by SiC device without the series connection. Therefore, development of ultra-high voltage SiC device will decrease resistance and power loss in the power networks. However, there are several difficulties to develop ultra-high voltage SiC devices. One of the difficulties is control of the carrier lifetime. In fact, ultra-high voltage devices are fabricated with bipolar structure, and, in the bipolar devices, the carrier lifetime is highly influential on resistance and power loss. The carrier lifetime is limited by several factors, and one of the most important factors is the surface recombination. Therefore, evaluation and control of the surface recombination is essential to develop ultra-high voltage SiC devices. In this paper, we will report evaluation techniques for the surface recombination of SiC. In addition, dependence of the surface recombination on surface treatments, crystal faces and temperature are shown. The evaluated surface recombination velocities will support development of ultra-high voltage SiC devices.

  14. Mechanical Behavior of Sic Fiber-Sic Matrix Composite and Correlation to In Situ Fiber Properites at Room and High Temperatures

    Institute of Scientific and Technical Information of China (English)

    Shuqi Guo; Yutaka Kagawa

    2000-01-01

    @@ Tensile mechanical properties of PIP-processed 2D, plain-woven fabric. BN-coated Hi-NicalonTM SiC fiber-reinforced SiC matrix composite at room temperature (298 K), 1400 and 1600 K in air have been studied.Young's modulus and tensile strength of the composite decrease with the increase of test temperature, especially at 1600 K a considerable reduction is observed. The tensile strength is found to be consistent with the value predicted by a global load sharing model, based on the actual in situ fiber strength properties which are obtained by a fracture mirror method.

  15. Elaboration and characterization of luminescent porous SiC microparticles/poly vinyl alcohol thin films

    Science.gov (United States)

    Kaci, S.; Mansouri, H.; Bozetine, I.; Keffous, A.; Guerbous, L.; Siahmed, Y.; Aissiou, S.

    2017-02-01

    In this study, Morphological, optical and photoluminescence characterizations of nanostructured SiC micropowder embedded in PVA matrix and deposited as thin films on glass substrates are reported. we prepared the porous SiC microparticles/PVA thin films by spin coating method. The average size of SiC microparticles were 7 μm. An electroless method was used for producing porous silicon carbide powder under UV irradiation. Silver nanoparticles coated SiC powder was formed by polyol process. The etchant was composed of aqueous HF and different oxidants. Various porous morphologies were obtained and studied as a function of oxidant type, etching time, and wavelength of irradiation. We concluded that the chemical etching conditions of SiC powder seems to have a large impact on the resulting properties. We noticed that the best photoluminescence property was achieved when SiC powder was etched in HF/K2S2O8 at reaction temperature of 80 °C for t = 40min and under UV light of 254 nm.

  16. Electronic Structure and Chemical Bond of Ti3SiC2 and Adding Al Element

    Institute of Scientific and Technical Information of China (English)

    MIN Xinmin; LU Ning; MEI Bingchu

    2006-01-01

    The relation among electronic structure, chemical bond and property of Ti3SiC2 and Al-doped was studied by density function and discrete variation (DFT-DVM) method. When Al element is added into Ti3SiC2, there is a less difference of ionic bond, which does not play a leading role to influent the properties. After adding Al, the covalent bond of Al and the near Ti becomes somewhat weaker, but the covalent bond of Al and the Si in the same layer is obviously stronger than that of Si and Si before adding. Therefore, in preparation of Ti3SiC2, adding a proper quantity of Al can promote the formation of Ti3SiC2. The density of state shows that there is a mixed conductor character in both of Ti3SiC2 and adding Al element. Ti3SiC2 is with more tendencies to form a semiconductor. The total density of state near Fermi lever after adding Al is larger than that before adding, so the electric conductivity may increase after adding Al.

  17. Si/C hybrid nanostructures for Li-ion anodes: An overview

    Science.gov (United States)

    Terranova, Maria Letizia; Orlanducci, Silvia; Tamburri, Emanuela; Guglielmotti, Valeria; Rossi, Marco

    2014-01-01

    This review article summarizes recent and increasing efforts in the development of novel Li ion cell anode nanomaterials based on the coupling of C with Si. The rationale behind such efforts is based on the fact that the Si-C coupling realizes a favourable combination of the two materials properties, such as the high lithiation capacity of Si and the mechanical and conductive properties of C, making Si/C hybrid nanomaterials the ideal candidates for innovative and improved Li-ion anodes. Together with an overview of the methodologies proposed in the last decade for material preparation, a discussion on relationship between organization at the nanoscale of the hybrid Si/C systems and battery performances is given. An emerging indication is that the enhancement of the batteries efficiency in terms of mass capacity, energy density and cycling stability, resides in the ability to arrange Si/C bi-component nanostructures in pre-defined architectures. Starting from the results obtained so far, this paper aims to indicate some emerging directions and to inspire promising routes to optimize fabrication of Si/C nanomaterials and engineering of Li-ion anodes structures. The use of Si/C hybrid nanostructures could represents a viable and effective solution to the foreseen limits of present lithium ion technology.

  18. U.S. Department of Energy Accident Resistant SiC Clad Nuclear Fuel Development

    Energy Technology Data Exchange (ETDEWEB)

    George W. Griffith

    2011-10-01

    A significant effort is being placed on silicon carbide ceramic matrix composite (SiC CMC) nuclear fuel cladding by Light Water Reactor Sustainability (LWRS) Advanced Light Water Reactor Nuclear Fuels Pathway. The intent of this work is to invest in a high-risk, high-reward technology that can be introduced in a relatively short time. The LWRS goal is to demonstrate successful advanced fuels technology that suitable for commercial development to support nuclear relicensing. Ceramic matrix composites are an established non-nuclear technology that utilizes ceramic fibers embedded in a ceramic matrix. A thin interfacial layer between the fibers and the matrix allows for ductile behavior. The SiC CMC has relatively high strength at high reactor accident temperatures when compared to metallic cladding. SiC also has a very low chemical reactivity and doesn't react exothermically with the reactor cooling water. The radiation behavior of SiC has also been studied extensively as structural fusion system components. The SiC CMC technology is in the early stages of development and will need to mature before confidence in the developed designs can created. The advanced SiC CMC materials do offer the potential for greatly improved safety because of their high temperature strength, chemical stability and reduced hydrogen generation.

  19. Velcro-Inspired SiC Fuzzy Fibers for Aerospace Applications.

    Science.gov (United States)

    Hart, Amelia H C; Koizumi, Ryota; Hamel, John; Owuor, Peter Samora; Ito, Yusuke; Ozden, Sehmus; Bhowmick, Sanjit; Syed Amanulla, Syed Asif; Tsafack, Thierry; Keyshar, Kunttal; Mital, Rahul; Hurst, Janet; Vajtai, Robert; Tiwary, Chandra Sekhar; Ajayan, Pulickel M

    2017-04-05

    The most recent and innovative silicon carbide (SiC) fiber ceramic matrix composites, used for lightweight high-heat engine parts in aerospace applications, are woven, layered, and then surrounded by a SiC ceramic matrix composite (CMC). To further improve both the mechanical properties and thermal and oxidative resistance abilities of this material, SiC nanotubes and nanowires (SiCNT/NWs) are grown on the surface of the SiC fiber via carbon nanotube conversion. This conversion utilizes the shape memory synthesis (SMS) method, starting with carbon nanotube (CNT) growth on the SiC fiber surface, to capitalize on the ease of dense surface morphology optimization and the ability to effectively engineer the CNT-SiC fiber interface to create a secure nanotube-fiber attachment. Then, by converting the CNTs to SiCNT/NWs, the relative morphology, advantageous mechanical properties, and secure connection of the initial CNT-SiC fiber architecture are retained, with the addition of high temperature and oxidation resistance. The resultant SiCNT/NW-SiC fiber can be used inside the SiC ceramic matrix composite for a high-heat turbo engine part with longer fatigue life and higher temperature resistance. The differing sides of the woven SiCNT/NWs act as the "hook and loop" mechanism of Velcro but in much smaller scale.

  20. SiC fibre by chemical vapour deposition on tungsten filament

    Indian Academy of Sciences (India)

    R V Krishnarao; J Subrahmanyam; S Subbarao

    2001-06-01

    A CVD system for the production of continuous SiC fibre was set up. The process of SiC coating on 19 m diameter tungsten substrate was studied. Methyl trichloro silane (CH3SiCl3) and hydrogen reactants were used. Effect of substrate temperature (1300–1500°C) and concentration of reactants on the formation of SiC coating were studied. SiC coatings of negligible thickness were formed at very low flow rates of hydrogen (5 × 10–5 m3/min) and CH3SiCl3 (1.0 × 10–4 m3/min of Ar). Uneven coatings and brittle fibres were formed at very high concentrations of CH3SiCl3 (6 × 10–4 m3/min of Ar). The flow rates of CH3SiCl3 and hydrogen were adjusted to get SiC fibre with smooth surface. The structure and morphology of SiC fibres were evaluated.

  1. Feasibility study on the application of carbide (ZrC, SiC) for VHTR

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Yeon; Kim, Weon Ju; Jung, Choong Hwan; Ryu, Woo Seog; Kim, Si Hyeong; Jang, Moon Hee; Lee, Young Woo

    2006-08-15

    A feasibility study on the coating process of ZrC for the TRISO nuclear fuel and applications of SiC as high temperature materials for the core components has performed to develop the fabrication process for the advanced ZrC TRISO fuels and the high temperature structural components for VHTR, respectively. In the case of ZrC coating, studies were focused on the comparisons of the developed coating processes for screening of our technology, the evaluations of the reactions parameters for a ZrC deposition by the thermodynamic calculations and the preliminary coating experiments by the chloride process. With relate to SiC ceramics, our interesting items are as followings; an analysis of applications and specifications of the SiC components and collections of the SiC properties and establishments of data base. For these purposes, applications of SiC ceramics for the GEN-IV related components as well as the fusion reactor related ones were reviewed. Additionally, the on-going activities with related to the ZrC clad and the SiC composites discussed in the VHTR GIF-PMB, were reviewed to make the further research plans at the section 1 in chapter 3.

  2. Packaging Technologies for 500C SiC Electronics and Sensors

    Science.gov (United States)

    Chen, Liang-Yu

    2013-01-01

    Various SiC electronics and sensors are currently under development for applications in 500C high temperature environments such as hot sections of aerospace engines and the surface of Venus. In order to conduct long-term test and eventually commercialize these SiC devices, compatible packaging technologies for the SiC electronics and sensors are required. This presentation reviews packaging technologies developed for 500C SiC electronics and sensors to address both component and subsystem level packaging needs for high temperature environments. The packaging system for high temperature SiC electronics includes ceramic chip-level packages, ceramic printed circuit boards (PCBs), and edge-connectors. High temperature durable die-attach and precious metal wire-bonding are used in the chip-level packaging process. A high temperature sensor package is specifically designed to address high temperature micro-fabricated capacitive pressure sensors for high differential pressure environments. This presentation describes development of these electronics and sensor packaging technologies, including some testing results of SiC electronics and capacitive pressure sensors using these packaging technologies.

  3. Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET

    Directory of Open Access Journals (Sweden)

    Frederick Ojiemhende Ehiagwina

    2016-09-01

    Full Text Available Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si.  A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on-state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.

  4. A SiC MOSFET Based Inverter for Wireless Power Transfer Applications

    Energy Technology Data Exchange (ETDEWEB)

    Onar, Omer C [ORNL; Chinthavali, Madhu Sudhan [ORNL; Campbell, Steven L [ORNL; Ning, Puqi [Chinese Academy of Sciences (CAS); White, Cliff P [ORNL; Miller (JNJ), John M. [JNJ-Miller PLC

    2014-01-01

    In a wireless power transfer (WPT) system, efficiency of the power conversion stages is crucial so that the WPT technology can compete with the conventional conductive charging systems. Since there are 5 or 6 power conversion stages, each stage needs to be as efficient as possible. SiC inverters are crucial in this case; they can handle high frequency operation and they can operate at relatively higher temperatures resulting in reduces cost and size for the cooling components. This study presents the detailed power module design, development, and fabrication of a SiC inverter. The proposed inverter has been tested at three center frequencies that are considered for the WPT standardization. Performance of the inverter at the same target power transfer level is analyzed along with the other system components. In addition, another SiC inverter has been built in authors laboratory by using the ORNL designed and developed SiC modules. It is shown that the inverter with ORNL packaged SiC modules performs simular to that of the inverter having commercially available SiC modules.

  5. On the Mechanical Properties of Hybrid Aluminium 7075 Matrix Composite Material Reinforced with SiC and TiC Produced by Powder Metallurgy Method

    Directory of Open Access Journals (Sweden)

    S. Pradeep Devaneyan

    2017-01-01

    Full Text Available Metal matrix composites are widely used in components of various components of industrial equipment because of their superior material properties like high stiffness to weight ratio and high impact strength and fracture toughness while compared to the conventional material. Due to the concepts of high strength to low weight ratio, Al 7075 was extensively applied in aircraft engine and wings. Even if Al 7075 has higher hardness, higher strength, excellent wear resistance, and high-temperature corrosion protection, it is in need of further enhancement of properties for increasing its applicability. This paper presents the mechanical behavior of aluminium 7075 reinforced with Silicon Carbide (SiC and Titanium Carbide (TiC through powder metallurgy route. These specimens were produced by powder metallurgy method. The hybrid composite was made by Al 7075 alloy as the matrix with Silicon Carbide and Titanium Carbide as reinforcement. Silicon Carbide and Titanium Carbide are mixed in different weight ratio based on the design matrix formulated through a statistical tool, namely, Response Surface Methodology (RSM. Enhanced mechanical properties have been obtained with 90% of Al 7075, 4% of TiC, and 8% of SiC composition in the composite. Coefficient of friction appears to be more which has been determined by ring compression test.

  6. Incorporation of oxygen in SiC implanted with hydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Barcz, A., E-mail: barcz@ite.waw.pl [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Institute of Electron Technology, 02-668 Warsaw (Poland); Jakieła, R. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Kozubal, M. [Institute of Electron Technology, 02-668 Warsaw (Poland); Dyczewski, J. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Celler, G.K. [Institute for Advanced Materials, Devices, and Nanotechnology (IAMDN)/Department of Materials Science and Engineering, Rutgers University, New Brunswick, NJ 08901 (United States)

    2015-12-15

    Oxygen accumulation at buried implantation-damage layers was studied after post-implantation annealing of hydrogen- or deuterium-implanted 4H–SiC. In this study H{sup +} or {sup 2}H{sup +} implantation was carried out at energies E, from 200 keV to 1 MeV, to fluences D, ranging from 2 × 10{sup 16}/cm{sup 2} to 1 × 10{sup 17}/cm{sup 2}. For comparison, the implantation was also done into float-zone (FZ) and Czochralski (CZ) silicon wafers. Post-implantation annealing at temperatures from 400 °C to 1150 °C was performed either in pure argon or in a water vapor. Characterization methods included SIMS, RBS and TEM. At sufficiently high doses, hydrogen implantation into semiconductors leads to the irreversible formation of a planar zone of microcavities, bubbles and other extended defects located at the maximum of deposited energy. This kind of highly perturbed layer, containing large amounts of agglomerated hydrogen is known to efficiently getter a number of impurities. Oxygen was detected in both CZ and FZ silicon subjected to Smart-Cut™ processing. We have identified, by SIMS profiling, a considerable oxygen peak situated at the interface between the SiC substrate and a layer implanted with 1 × 10{sup 17} H ions/cm{sup 2} and heated to 1150 °C in either H{sub 2}O vapor or in a nominally pure Ar. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, the objective of the present study was to identify the source and possible transport mechanism of oxygen species to the cavity band. Through the analysis of several implants annealed at various conditions, we conclude that, besides diffusion from the bulk or from surface oxides, an alternative path for oxygen agglomeration is migration of gaseous O{sub 2} or H{sub 2}O from the edge of the sample through the porous layer.

  7. Resonant optical spectroscopy and coherent control of C r4 + spin ensembles in SiC and GaN

    Science.gov (United States)

    Koehl, William F.; Diler, Berk; Whiteley, Samuel J.; Bourassa, Alexandre; Son, N. T.; Janzén, Erik; Awschalom, David D.

    2017-01-01

    Spins bound to point defects are increasingly viewed as an important resource for solid-state implementations of quantum information and spintronic technologies. In particular, there is a growing interest in the identification of new classes of defect spin that can be controlled optically. Here, we demonstrate ensemble optical spin polarization and optically detected magnetic resonance (ODMR) of the S = 1 electronic ground state of chromium (C r4 + ) impurities in silicon carbide (SiC) and gallium nitride (GaN). Spin polarization is made possible by the narrow optical linewidths of these ensembles (73% of the overall optical emission is contained with the defects' zero-phonon lines. These characteristics make this semiconductor-based, transition metal impurity system a promising target for further study in the ongoing effort to integrate optically active quantum states within common optoelectronic materials.

  8. Sobredentadura total superior implantosoportada Superior total overdenture on implants

    Directory of Open Access Journals (Sweden)

    Luis Orlando Rodríguez García

    2010-06-01

    Full Text Available Se presenta un caso de un paciente desdentado total superior, rehabilitado en la consulta de implantología de la Clínica "Pedro Ortiz" del municipio Habana del Este en Ciudad de La Habana, Cuba, en el año 2009, mediante prótesis sobre implantes osteointegrados, técnica que se ha incorporado a la práctica estomatológica en Cuba como alternativa al tratamiento convencional en los pacientes desdentados totales. Se siguió un protocolo que comprendió una fase quirúrgica, procedimiento con o sin realización de colgajo y carga precoz o inmediata. Se presenta un paciente masculino de 56 años de edad, que acudió a la consulta multidisciplinaria, preocupado, porque se le habían elaborado tres prótesis en los últimos dos años y ninguna reunía los requisitos de retención que él necesitaba para sentirse seguro y cómodo con las mismas. El resultado final fue la satisfacción total del paciente, con el mejoramiento de la calidad estética y funcional.This is the case of a total maxilla edentulous patient seen in consultation of the "Pedro Ortíz" Clinic Implant of Habana del Este municipality in 2009 and con rehabilitation by prosthesis over osteointegration implants added to stomatology practice in Cuba as an alternative to conventional treatment in patients totally edentulous. We follow a protocol including a surgery or surgical phase, technique without or with flap creation and early or immediate load. This is a male patient aged 56 came to our multidisciplinary consultation worried because he had three prostheses in last two years and any fulfilled the requirements of retention to feel safe and comfortable with prostheses. The final result was the total satisfaction of rehabilitated patient improving its aesthetic and functional quality.

  9. Electronic Structure of SiC(310)Twin Boundary Doped With B,N,Al and Ti

    Institute of Scientific and Technical Information of China (English)

    YE Yajing; ZHANG Litong; SU Kehe; CHENG Laifei; XU Yongdong

    2009-01-01

    Doping of boron,nitrogen,aluminum and titanium in the SiC(310)twin boundary was investigated,and the first-principle calculation was used to analyze the underlying mechanism of excellent creep resistance and strength of Sylramic and Tyranno SA SiC fibers.The electronic struc-tures were also analyzed and compared.The results of Mulliken overlap populations,electron density differences and density of states reveal that doping of B or N atom reinforces SiC GBs bonding, however,doping of Al or Ti atom weakens SiC GBs bonding.The reinforced SiC GBs will largely prevent atoms from sliding near GBs.The experimental results would be one of the reasons which lead to the reinforcement of either creep resistance or the strength of SiC fibers.

  10. Microwave Absorption Properties of Ni-Foped SiC Powders in the 2-18 GHz Frequency Range

    Science.gov (United States)

    Jin, Hai-Bo; Li, Dan; Cao, Mao-Sheng; Dou, Yan-Kun; Chen, Tao; Wen, Bo; Simeon, Agathopoulos

    2011-03-01

    Ni-doped SiC powder with improved dielectric and microwave absorption properties was prepared by self-propagating high-temperature synthesis (SHS). The XRD analysis of the as-synthesized powders suggests that Ni is accommodated in the sites of Si in the lattice of SiC, which shrinks in the presence of Ni. The experimental results show an improvement in the dielectric properties of the Ni-doped SiC powder in the frequency range of 2-18 GHz. The bandwidth of the reflection loss below -10 dB is broadened from 3.04 (for pure SiC) to 4.56 GHz (for Ni-doped SiC), as well as the maximum reflection loss of produced powders from 13.34 to 22.57 dB, indicating that Ni-doped SiC could be used as an effective microwave absorption material.

  11. Microwave Absorption Properties of Ni-Foped SiC Powders in the 2-18 GHz Frequency Range

    Institute of Scientific and Technical Information of China (English)

    JIN Hai-Bo; LI Dan; CAO Mao-Sheng; DOU Yan-Kun; CHEN Tao; WEN Bo; Simeon Agathopoulos

    2011-01-01

    Ni-doped SiC powder with improved dielectric and microwave absorption properties was prepared by selfpropagating high-temperature synthesis(SHS). The XRD analysis of the asynthesized powders suggests that Ni is accommodated in the sites of Si in the lattice of SiC, which shrinks in the presence of Ni. The experimental results show an improvement in the dielectric properties of the Ni-doped SiC powder in the frequency range of 2-18 GHz. The bandwidth of the reflection loss below-10 dB is broadened from 3.04(for pure SiC) to 4.56 GHz (for Ni-doped SiC), as well as the maximum reflection loss of produced powders from 13.34 to 22.57dB, indicating that Ni-doped SiC could be used as an effective microwave absorption material.

  12. Amplifiers dedicated for large area SiC photodiodes

    Science.gov (United States)

    Doroz, P.; Duk, M.; Korwin-Pawlowski, M. L.; Borecki, M.

    2016-09-01

    Large area SiC photodiodes find applications in optoelectronic sensors working at special conditions. These conditions include detection of UV radiation in harsh environment. Moreover, the mentioned sensors have to be selective and resistant to unwanted signals. For this purpose, the modulation of light at source unit and the rejection of constant current and low frequency component of signal at detector unit are used. The popular frequency used for modulation in such sensor is 1kHz. The large area photodiodes are characterized by a large capacitance and low shunt resistance that varies with polarization of the photodiode and can significantly modify the conditions of signal pre-amplification. In this paper two pre-amplifiers topology are analyzed: the transimpedance amplifier and the non-inverting voltage to voltage amplifier with negative feedback. The feedback loops of both pre-amplifiers are equipped with elements used for initial constant current and low frequency signals rejections. Both circuits are analyzed and compared using simulation and experimental approaches.

  13. Development of Cu Reinforced SiC Particulate Composites

    Science.gov (United States)

    Singh, Harshpreet; Kumar, Lailesh; Nasimul Alam, Syed

    2015-02-01

    This paper presents the results of Cu-SiCp composites developed by powder metallurgy route and an attempt has been made to make a comparison between the composites developed by using unmilled Cu powder and milled Cu powder. SiC particles as reinforcement was blended with unmilled and as-milled Cu powderwith reinforcement contents of 10, 20, 30, 40 vol. % by powder metallurgy route. The mechanical properties of pure Cu and the composites developed were studied after sintering at 900°C for 1 h. Density of the sintered composites were found out based on the Archimedes' principle. X-ray diffraction of all the composites was done in order to determine the various phases in the composites. Scanning electron microscopy (SEM) and EDS (electron diffraction x-ray spectroscopy) was carried out for the microstructural analysis of the composites. Vickers microhardness tester was used to find out the hardness of the samples. Wear properties of the developed composites were also studied.

  14. MuSIC: delivering the world's most intense muon beam

    CERN Document Server

    Cook, S; Edmonds, A; Fukuda, M; Hatanaka, K; Hino, Y; Kuno, Y; Lancaster, M; Mori, Y; Ogitsu, T; Sakamoto, H; Sato, A; Tran, N H; Truong, N M; Wing, M; Yamamoto, A; Yoshida, M

    2016-01-01

    A new muon beamline, muon science innovative channel (MuSIC), was set up at the Research Centre for Nuclear Physics (RCNP), Osaka University, in Osaka, Japan, using the 392 MeV proton beam impinging on a target. The production of an intense muon beam relies on the efficient capture of pions, which subsequently decay to muons, using a novel superconducting solenoid magnet system. After the pion-capture solenoid the first $36^\\circ$ of the curved muon transport line was commissioned and the muon flux was measured. In order to detect muons, a target of either copper or magnesium was placed to stop muons at the end of the muon beamline. Two stations of plastic scintillators located upstream and downstream from the muon target were used to reconstruct the decay spectrum of muons. In a complementary method to detect negatively-charged muons, the X-ray spectrum yielded by muonic atoms in the target were measured in a germanium detector. Measurements, at a proton beam current of 6 pA, yielded $(10.4 \\pm 2.7) \\times 1...

  15. Matrix-grain-bridging contributions to the toughness of SiC composites with alumina-coated SiC platelets

    Energy Technology Data Exchange (ETDEWEB)

    Cao, J.J.; He, Y.; MoberlyChan, W.J.; De Jonghe, L.C. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Science Div.

    1996-05-01

    Silicon carbide composites were fabricated through the incorporation of alumina-coated SiC platelets into a SiC matrix. Mechanical properties were evaluated in direct comparison with a commercial Hexoloy SiC. The fracture toughness of the composite, with a fine grained {beta}-SiC matrix, was twice that of the commercial material. The alumina-coating on the platelets provided a weak interface to promote crack deflection and platelet bridging, as well as easing densification of the composites. On the other hand, a three-fold increase in fracture toughness (9.1 MPa {radical}m) of an in situ toughened monolithic SiC was achieved by processing at higher temperatures, promoting the {beta}-to-{alpha} phase transformation and forming a microstructure containing high-aspect-ration plate-shaped grains. Efforts were made to combine the effects of coated-platelets reinforcement and in situ toughening in the matrix. Moderate high toughness (8 MPa {radical}m) was achieved by coupled toughening. The contribution of matrix-grain-bridging, however, was limited by the processing temperature at which the oxide coating was stable.

  16. Characterization of high-dose and high-energy implanted gate and source diode and analysis of lateral spreading of p gate profile in high voltage SiC static induction transistors

    Science.gov (United States)

    Onose, Hidekatsu; Kobayashi, Yutaka; Onuki, Jin

    2017-03-01

    The effect of the p gate dose on the characteristics of the gate-source diode in SiC static induction transistors (SIT) was investigated. It was found that a dose of 1.5 × 1014 cm-2 yields a pn junction breakdown voltage higher than 60 V and good forward characteristics. A normally on SiC SIT was fabricated and demonstrated. A blocking voltage higher than 2.0 kV at a gate-source voltage of -50 V and on-resistance of 70 mΩ cm2 were obtained. Device simulations were performed to investigate the effect of the lateral spreading. By comparing the measured I-V curves with simulation results, the lateral spreading factor was estimated to be about 0.5. The lateral spreading detrimentally affected the electrical properties of the SIT made using implantations at energies higher than 1 MeV.

  17. Method for increasing -SiC yield on solid state reaction of coal fly ash and activated carbon powder

    Indian Academy of Sciences (India)

    Sulardjaka; Jamasri; M W Wildan; Kusnanto

    2011-07-01

    A novel process for increasing -SiC yield on solid state reaction of coal fly ash and micro powder activated carbon powder has been proposed. -SiC powder was synthesized at temperature 1300°C for 2 h under vacuum condition with 1 l/min argon flow. Cycling synthesis process has been developed for increasing -SiC yield on solid state reaction of coal fly ash and activated carbon powder. Synthesized products were analyzed by XRD with Cu-K radiation, FTIR spectrometer and SEM fitted with EDAX. The results show that the amount of relative -SiC is increased with the number of cycling synthesis.

  18. Uniformity's influence of silica xerogel on synthesis efficiency of SiC nanorods by carbothermal reduction

    Energy Technology Data Exchange (ETDEWEB)

    Huynh Thi Ha; Nguyen Thi Thu Ha; Phan Viet Phong; Dao Tran Cao; Le Quang Huy; Nguyen The Quynh [Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Cau Giay Distr., Hanoi (Viet Nam); Cao Tuan Anh [Institute of Physics, Vietnam Academy of Science and Technology, 10 Dao Tan Street, Badinh Distr., Hanoi (Viet Nam)], E-mail: haht@ims.vast.ac.vn

    2009-09-01

    Silica xerogels containing nanocarbon were milled for several hours before the carbothermal reduction processing. The formation of SiC nanorods was investigated at different annealing temperatures. It is shown that the formation temperature of SiC nanorods can be decreased if the powder size of milled silica xerogels is lower than 100 nm. The morphology, structure and production efficiency of synthesized SiC were determined by scanning electron microscopy SEM, X-ray diffraction XRD and thermo-gravimetric analysis TGA measurements. It is evident that production efficiency of synthesized SiC nanorods clearly depends on uniformity of precursor materials.

  19. Experimental Investigation of Mechanical and Thermal properties of sisal fibre reinforced composite and effect of sic filler material

    Science.gov (United States)

    Surya Teja, Malla; Ramana, M. V.; Sriramulu, D.; Rao, C. J.

    2016-09-01

    With a view of exploring the potential use of natural recourses, we made an attempt to fabricate sisal fibre polymer composites by hand lay-up method. Natural fiber composites are renewable, cheap and biodegradable. Their easy availability, lower density, higher specific properties, lower cost, satisfactory mechanical and thermal properties, non-corrosive nature, makes them an attractive ecological alternative to glass, carbon or other man-made synthetic fibers. In this work, the effect of SiC on mechanical and thermal properties of natural sisal fiber composites are investigated. The composite has been made with and without SiC incorporating natural sisal fiber with polyester as bonding material. The experimental outcomes exhibited that the tensile strength of composite with 10%SiC 2.53 times greater than that of composite without SiC. The impact strength of composite with 10% SiC is 1.73 times greater than that of composite without SiC plain polyester. Thermal properties studied include thermal conductivity, specific heat capacity, thermal diffusivity, thermal degradation and stability. Three different samples with 0%, 5%, 10% SiC powder are considered. With the addition of SiC filler powder, thermal conductivity increases, specific heat capacity gradually increases then decreases, thermal diffusivity increases and thermal stability improves with Sic powder.

  20. The streptococcal inhibitor of complement (SIC) protects Streptococcus pyogenes from bacteriocin-like inhibitory substance (BLIS) from Streptococcus salivarius.

    Science.gov (United States)

    Minami, Masaaki; Ohmori, Daisuke; Tatsuno, Ichiro; Isaka, Masanori; Kawamura, Yoshiaki; Ohta, Michio; Hasegawa, Tadao

    2009-09-01

    Streptococcus salivarius inhibits the growth of Streptococcus pyogenes in vitro. Streptococcus pyogenes has various virulence factors, including the streptococcus inhibitor of complement (SIC). Although SIC inhibits the activity of the peptides LL-37 and NAP1, the relationship between SIC and the bacteriocin-like inhibitory substance (BLIS) has not been elucidated. Here, we evaluated whether S. salivarius BLIS affects S. pyogenes SIC. We created three deltasic mutant strains from three S. pyogenes strains and performed deferred antagonism assays. The test strains were BLIS-positive S. salivarius JCM5707 and BLIS-negative S. salivarius NCU12. Deferred antagonism assays with JCM5707 showed that the inhibitory zones in the three deltasic mutant strains were wider than those in the three wild-type strains. Streptococcus pyogenes was cultured in BLIS-containing broth and the change in SIC in the supernatant was assessed by two-dimensional gel electrophoresis (2-DE). The 2-DE analysis of S. pyogenes exoproteins with the JCM5707 supernatant showed reduced SIC compared with those without the JCM5707 supernatant. Changes in sic mRNA levels affected by S. salivarius BLIS were evaluated by a reverse transcriptase-PCR. The sic mRNA level was affected more by the BLIS-positive S. salivarius than by the BLIS-negative strain. Our result indicates that SIC plays a role in the inhibition of S. salivarius BLIS.

  1. Wear Behaviour of Al-6061/SiC Metal Matrix Composites

    Science.gov (United States)

    Mishra, Ashok Kumar; Srivastava, Rajesh Kumar

    2016-06-01

    Aluminium Al-6061 base composites, reinforced with SiC particles having mesh size of 150 and 600, which is fabricated by stir casting method and their wear resistance and coefficient of friction has been investigated in the present study as a function of applied load and weight fraction of SiC varying from 5, 10, 15, 20, 25, 30, 35 and 40 %. The dry sliding wear properties of composites were investigated by using Pin-on-disk testing machine at sliding velocity of 2 m/s and sliding distance of 2000 m over a various loads of 10, 20 and 30 N. The result shows that the reinforcement of the metal matrix with SiC particulates up to weight percentage of 35 % reduces the wear rate. The result also show that the wear of the test specimens increases with the increasing load and sliding distance. The coefficient of friction slightly decreases with increasing weight percentage of reinforcements. The wear surfaces are examined by optical microscopy which shows that the large grooved regions and cavities with ceramic particles are found on the worn surface of the composite alloy. This indicates an abrasive wear mechanism, which is essentially a result of hard ceramic particles exposed on the worn surfaces. Further, it was found from the experimentation that the wear rate decreases linearly with increasing weight fraction of SiC and average coefficient of friction decreases linearly with increasing applied load, weight fraction of SiC and mesh size of SiC. The best result has been obtained at 35 % weight fraction and 600 mesh size of SiC.

  2. Diffusion of Ag, Au and Cs implants in MAX phase Ti3SiC2

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Weilin; Henager, Charles H.; Varga, Tamas; Jung, Hee Joon; Overman, Nicole R.; Zhang, Chonghong; Gou, Jie

    2015-05-16

    MAX phases (M: early transition metal; A: elements in group 13 or 14; X: C or N), such as titanium silicon carbide (Ti3SiC2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti3SiC2 has been considered as a possible fuel cladding material. This study reports on the diffusivities of fission product surrogates (Ag and Cs) and a noble metal Au (with diffusion behavior similar to Ag) in this ternary compound at elevated temperatures, as well as in dual-phase nanocomposite of Ti3SiC2/3C-SiC and polycrystalline CVD 3C-SiC for behavior comparisons. Samples were implanted with Ag, Au or Cs ions and characterized with various methods, including x-ray diffraction, electron backscatter diffraction, energy dispersive x-ray spectroscopy, Rutherford backscattering spectrometry, helium ion microscopy, and transmission electron microscopy. The results show that in contrast to immobile Ag in 3C-SiC, there is a significant outward diffusion of Ag in Ti3SiC2 within the dual-phase nanocomposite during Ag ion implantation at 873 K. Similar behavior of Au in polycrystalline Ti3SiC2 was also observed. Cs out-diffusion and release from Ti3SiC2 occurred during post-implantation thermal annealing at 973 K. This study suggests caution and further studies in consideration of Ti3SiC2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures.

  3. A study on the high densification process of CVI SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Doo Jin; Son, Ji Hye; Jun, Jin O. [Yonsei University, Seoul (Korea)

    2002-03-01

    A novel process called in-situ whisker growing and matrix filling was designed to overcome the problem of conventional ICVI process which make composites porous. Fiber reinforced SiC matrix composites were successfully fabricated by the process in the present study. Methyltrichlorosilane(CH{sub 3}SiCl{sub 3},MTS) was chosen as a source precursor of SiC. Hydrogen was used as a dilute gas for the in-situ whisker growing process and nitrogen was used as a dilute gas for the SiC matrix filling process. In order to increase the fracture toughness of the composites, the fibers were coated with a thin pyrolytic carbon layer at 1000 .deg. C before ICVI process. In case of the monolithic SiC-SiC composites, SiC whisker was grown at the temperature of 1100 .deg. C with the input gas ratio of 15. SiC-SiC composites obtained by the suggested process were denser than the composites obtained by conventional ICVI process. Also, in case of the stacked SiC-SiC composites, SiC whisker was grown at the temperature of 1100 .deg. C with the input gas ratio of 20 and 30. In addition, the SiC whisker was also grown at 1150 .deg.C with the input gas ratio of 20. The optimum condition of the in-situ whisker growing for the following matrix filling process is 1100 .deg. C, {alpha}=20, and 2hr. The designed process, in-situ whisker growing and matrix filling, was confirmed as a novel process which can fabricate high density fiber reinforced SiC matrix composites. 40 refs., 24 figs., 7 tabs. (Author)

  4. Effect of SiC particles on microarc oxidation process of magnesium matrix composites

    Science.gov (United States)

    Wang, Y. Q.; Wang, X. J.; Gong, W. X.; Wu, K.; Wang, F. H.

    2013-10-01

    SiC particles are an important reinforced phase in metal matrix composites. Their effect on the microarc oxidation (MAO, also named plasma electrolytic oxidation-PEO) process of SiCp/AZ91 Mg matrix composites (MMCs) was studied and the mechanism was revealed. The corrosion resistance of MAO coating was also investigated. Voltage-time curves during MAO were recorded to study the barrier film status on the composites. Scanning electron microscopy was used to characterize the existing state of SiC particles in MAO. Energy dispersive X-ray spectrometry and X-ray photoelectron spectroscopy were used to analyze the chemical composition of the coating. Corrosion resistance of the bare and coated composites was evaluated by potentiodynamic polarization curves in 3.5% NaCl solution. Results showed that the integrality and electrical insulation properties of the barrier film on the composites were destroyed by the SiC particles. Consequently, the sparking discharge at the early stage of MAO was inhibited, and the growth efficiency of the MAO coating decreased with the increase in the volume fraction of SiC particles. SiC particles did not exist stably during MAO; they were oxidized or partially oxidized into SiO2 before the overall sparking discharge. The transformation from semi-conductive SiC to insulating SiO2 by oxidation restrained the current leakage at the original SiC positions and then promoted sparking discharge and coating growth. The corrosion current density of SiCp/AZ91 MMCs was reduced by two orders of magnitude after MAO treatment. However, the corrosion resistances of the coated composites were lower than that of the coated alloy.

  5. Effect of SiC particles on microarc oxidation process of magnesium matrix composites

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y.Q., E-mail: qiuorwang@hrbeu.edu.cn [Corrosion and Protection Laboratory, Education Ministry Key Laboratory of Superlight Materials and Surface Technology, Harbin Engineering University, Harbin 150001 (China); Wang, X.J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Gong, W.X. [Corrosion and Protection Laboratory, Education Ministry Key Laboratory of Superlight Materials and Surface Technology, Harbin Engineering University, Harbin 150001 (China); Wu, K. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wang, F.H. [Corrosion and Protection Laboratory, Education Ministry Key Laboratory of Superlight Materials and Surface Technology, Harbin Engineering University, Harbin 150001 (China); State Key Laboratory for Corrosion and Protection, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

    2013-10-15

    SiC particles are an important reinforced phase in metal matrix composites. Their effect on the microarc oxidation (MAO, also named plasma electrolytic oxidation-PEO) process of SiC{sub p}/AZ91 Mg matrix composites (MMCs) was studied and the mechanism was revealed. The corrosion resistance of MAO coating was also investigated. Voltage–time curves during MAO were recorded to study the barrier film status on the composites. Scanning electron microscopy was used to characterize the existing state of SiC particles in MAO. Energy dispersive X-ray spectrometry and X-ray photoelectron spectroscopy were used to analyze the chemical composition of the coating. Corrosion resistance of the bare and coated composites was evaluated by potentiodynamic polarization curves in 3.5% NaCl solution. Results showed that the integrality and electrical insulation properties of the barrier film on the composites were destroyed by the SiC particles. Consequently, the sparking discharge at the early stage of MAO was inhibited, and the growth efficiency of the MAO coating decreased with the increase in the volume fraction of SiC particles. SiC particles did not exist stably during MAO; they were oxidized or partially oxidized into SiO{sub 2} before the overall sparking discharge. The transformation from semi-conductive SiC to insulating SiO{sub 2} by oxidation restrained the current leakage at the original SiC positions and then promoted sparking discharge and coating growth. The corrosion current density of SiC{sub p}/AZ91 MMCs was reduced by two orders of magnitude after MAO treatment. However, the corrosion resistances of the coated composites were lower than that of the coated alloy.

  6. SiC JFET Transistor Circuit Model for Extreme Temperature Range

    Science.gov (United States)

    Neudeck, Philip G.

    2008-01-01

    A technique for simulating extreme-temperature operation of integrated circuits that incorporate silicon carbide (SiC) junction field-effect transistors (JFETs) has been developed. The technique involves modification of NGSPICE, which is an open-source version of the popular Simulation Program with Integrated Circuit Emphasis (SPICE) general-purpose analog-integrated-circuit-simulating software. NGSPICE in its unmodified form is used for simulating and designing circuits made from silicon-based transistors that operate at or near room temperature. Two rapid modifications of NGSPICE source code enable SiC JFETs to be simulated to 500 C using the well-known Level 1 model for silicon metal oxide semiconductor field-effect transistors (MOSFETs). First, the default value of the MOSFET surface potential must be changed. In the unmodified source code, this parameter has a value of 0.6, which corresponds to slightly more than half the bandgap of silicon. In NGSPICE modified to simulate SiC JFETs, this parameter is changed to a value of 1.6, corresponding to slightly more than half the bandgap of SiC. The second modification consists of changing the temperature dependence of MOSFET transconductance and saturation parameters. The unmodified NGSPICE source code implements a T(sup -1.5) temperature dependence for these parameters. In order to mimic the temperature behavior of experimental SiC JFETs, a T(sup -1.3) temperature dependence must be implemented in the NGSPICE source code. Following these two simple modifications, the Level 1 MOSFET model of the NGSPICE circuit simulation program reasonably approximates the measured high-temperature behavior of experimental SiC JFETs properly operated with zero or reverse bias applied to the gate terminal. Modification of additional silicon parameters in the NGSPICE source code was not necessary to model experimental SiC JFET current-voltage performance across the entire temperature range from 25 to 500 C.

  7. The Application of Spectral Characteristic Space Method to the Alteration Information Extraction of Lake Superior-Type Iron Deposit%基于光谱特征空间的苏必利尔湖型铁矿高光谱遥感蚀变信息提取方法

    Institute of Scientific and Technical Information of China (English)

    黄爽; 陈圣波; 周超; 査逢丽; 路鹏; 黄唯实

    2015-01-01

    The field study of overseas iron ore deposits is difficult because of its remote location.The spectral characteristic was used to extract alteration information in view of the limitation of the traditional methods in this paper,aiming to explore altera-tion information extraction from hyperspectral images for the Lake Superior type iron ore to facilitate overseas prospecting.A two-dimensional spectral characteristic space takes on an anisotropic feature in associated distribution of two principal bands af-ter principal component analysis.The distribution is usually combined by oval clusters.The scatter points were enclosed in oval clusters of alteration information,and the mean spectra of abnormal scatter points were matched with mineral spectra from United States Geological Survey(USGS)spectral library by means of spectral feature fitting to ensure the type of alteration minerals.Spectral characteristic space method was described with the instance of Lake Superior-type iron deposit—Aguas Clar-as iron area in Brazil.Hematite,chlorite and other minerals were extracted in this study.It is found that the type and distribu-tion of extracted altered minerals were consistent well with geological condition.%由于境外铁矿床位置偏远,现场研究困难,旨在探讨苏必利尔湖型铁矿的高光谱遥感蚀变信息提取方法,为境外找矿提供依据。鉴于传统蚀变信息提取方法的局限性,研究了在二维光谱特征空间中提取蚀变信息的方法。高光谱影像经主成分变换后,包含较多地物信息的两个主成分的二维光谱特征空间体现了各向异性的特点,不同地物的聚类常呈类似椭圆分布。在蚀变信息的聚类椭圆中圈定散点,并应用波谱特征拟合,将异常散点的平均光谱与美国地质调查局(United States Geological Sur-vey,USGS)光谱库中的矿物光谱匹配,确定蚀变矿物类型。以苏必利尔湖型铁矿———巴西 Aguas Claras 铁矿区为例,提取了

  8. Oxidation of SiC Fiber-Reinforced SiC Matrix Composites with a BN Interphase

    Science.gov (United States)

    Opila, Elizabeth; Boyd, Meredith K.

    2010-01-01

    SiC-fiber reinforced SiC matrix composites with a BN interphase were oxidized in reduced oxygen partial pressures of oxygen to simulate the environment for hypersonic vehicle leading edge applications. The constituent fibers as well as composite coupons were oxidized in oxygen partial pressures ranging from 1000 ppm O2 to 5% O2 balance argon. Exposure temperatures ranged from 816 C to 1353 C (1500 F to 2450 F). The oxidation kinetics of the coated fibers were monitored by thermogravimetric analysis (TGA). An initial rapid transient weight gain was observed followed by parabolic kinetics. Possible mechanisms for the transient oxidation are discussed. One edge of the composite coupon seal coat was ground off to simulate damage to the composite which allowed oxygen ingress to the interior of the composite. Oxidation kinetics of the coupons were characterized by scanning electron microscopy since the weight changes were minimal. It was found that sealing of the coupon edge by silica formation occurred. Differences in the amount and morphology of the sealing silica as a function of time, temperature and oxygen partial pressure are discussed. Implications for use of these materials for hypersonic vehicle leading edge materials are summarized.

  9. High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications

    Energy Technology Data Exchange (ETDEWEB)

    Whitaker, Mr. Bret [APEI, Inc.; Cole, Mr. Zach [APEI, Inc.; Passmore, Mr. Brandon [APEI, Inc.; Martin, Daniel [APEI, Inc.; Mcnutt, Tyler [APEI, Inc.; Lostetter, Dr. Alex [APEI, Inc.; Ericson, Milton Nance [ORNL; Frank, Steven Shane [ORNL; Britton Jr, Charles L [ORNL; Marlino, Laura D [ORNL; Mantooth, Alan [University of Arkansas; Francis, Dr. Matt [University of Arkansas; Lamichhane, Ranjan [University of Arkansas; Shepherd, Dr. Paul [University of Arkansas; Glover, Dr. Michael [University of Arkansas

    2014-01-01

    This paper presents the testing results of an all-silicon carbide (SiC) intelligent power module (IPM) for use in future high-density power electronics applications. The IPM has high-temperature capability and contains both SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter to showcase the performance of the module in a system level application. The converter was initially operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The efficiency of the converter was then evaluated experimentally and optimized by increasing the overdrive voltage on the SiC gate driver ICs. Overall a peak efficiency of 97.7% was measured at 3.0 kW output. The converter s switching frequency was then increased to 500 kHz to prove the high frequency capability of the power module was then pushed to its limits and operated at a switching frequency of 500 kHz. With no further optimization of components, the converter was able to operate under these conditions and showed a peak efficiency of 95.0% at an output power of 2.1 kW.

  10. Paso superior en una ladera

    Directory of Open Access Journals (Sweden)

    Bender, O.

    1965-07-01

    Full Text Available The Redwood highway, through the Californian forest, runs on a viaduct, as it crosses a mountain slope of about 45° inclination. The firm ground is fairly deep, and as an additional constructional difficulty, it was necessary to respect the natural beauty of the countryside. A structure of portal frames were built, forming a number of short spans. These spans were bridged with metal girders, on which a 19 m wide deck was placed. The columns are hollow and have a transversal cross beam, to join each pair. There was difficulty in excavating the foundations for the columns, as it was necessary to dig through the soft top soil, and also prevent this soil from hurting the trunks of the forest trees. Another significant difficulty in the construction of this viaduct was the access to the working site, since there were no suitable platforms from which to operate the appropriate machinery. This made it necessary to do a lot of the work by manual operation. As one of the edges of the deck is very close to the mountain side, a supporting beam was erected on this side. It was made of concrete, on metal piles. The formwork for the deck structure was placed on the concrete stems of the supporting piles.La autopista denominada Redwood (California salva, con un paso superior, la ladera de un bosque cuya pendiente es del 1/1. El terreno firme se halla a bastante profundidad, añadiéndose, a los naturales problemas de la construcción, el imperativo de respetar la belleza agreste del paraje. La solución adoptada consiste en una estructura porticada, con varios tramos de pequeñas luces, salvados con vigas metálicas, sobre los que se coloca la losa del tablero, de 19 m de anchura total. Los soportes están constituidos por pórticos de dos montantes huecos (con bases de hormigón en masa por debajo del suelo, hasta el firme coronados por un cabezal. La perforación de pozos para el hormigonado de los montantes presentaba la dificultad de atravesar el terreno

  11. 微波合成 SiC 模拟放射性石墨固化的可行性研究∗%Study on Simulate Immoblization of Radioactive Graphite as SiC Using Microwave Route

    Institute of Scientific and Technical Information of China (English)

    林鹏程; 任雪潭; 刘艳春

    2015-01-01

    笔者针对放射性石墨处理现状,提出一种简单、低成本的放射性石墨固化工艺。该工艺采用固相反应原理,利用石墨的吸波特性在微波场中实现放射性石墨的快速固化处理。以纳米碳粉和超细硅粉为原料,经球磨混合均匀后在微波场中进行合成实验,并采用 XRD、SEM 对所得到的物料进行了物相表征,成功合成出绿色 SiC 粉体,该工艺可用于放射性石墨的固化处理。%This article mainly introduced the treatment of radioactive graphite in recent years,and proposed a simple and eco-nomical process to solidify radioactive graphitebased a solid-phase reaction principle,and the microwave absorbing charac-teristics of graphitein the microwave field.The raw materials are nano carbon powder and silica power,after mixing in a ball mill the mixtureswere treated in microwave field.The obtained materials were characterized by theXRD,SEM means, the results indicate the green SiC powder can be synthesized,the process can be used to the handling of radioactive graph-ite.

  12. Pseudodisplacements of superior vena cava catheter in the persistent left superior vena cava

    Energy Technology Data Exchange (ETDEWEB)

    Jantsch, H.; Draxler, V.; Muhar, U.; Schlemmer, M.; Waneck, R.

    1983-01-01

    Pseudodisplacement of a left sided superior vena cava catheter in a persistent superior vena cava may be expected in adults in 0,37% and in a group of children with congenital heart disease in 2,5%. Embryology, anatomy and clinical implications is discussed on the basis of our own cases. The vena cava superior sinistra persitents is depending on a sufficient calibre a suitable vessel for a superior cava catheter.

  13. Thermal conductivity analysis of SiC ceramics and fully ceramic microencapsulated fuel composites

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyeon-Geun, E-mail: hglee@kaeri.re.kr [Korea Atomic Energy Research Institute, 989-111 Daedeok-daero, Yuseong-gu, Daejeon (Korea, Republic of); Kim, Daejong [Korea Atomic Energy Research Institute, 989-111 Daedeok-daero, Yuseong-gu, Daejeon (Korea, Republic of); Lee, Seung Jae [KEPCO Nuclear Fuel, 242, Daedeok-daero, Yuseong-gu, Daejeon (Korea, Republic of); Park, Ji Yeon; Kim, Weon-Ju [Korea Atomic Energy Research Institute, 989-111 Daedeok-daero, Yuseong-gu, Daejeon (Korea, Republic of)

    2017-01-15

    Highlights: • Thermal conductivity of SiC ceramics and FCM pellets was measured and discussed. • Thermal conductivity of FCM pellets was analyzed by the Maxwell-Eucken equation. • Effective thermal conductivity of TRISO particles applied in this study was assumed. - Abstract: The thermal conductivity of SiC ceramics and FCM fuel composites, consisting of a SiC matrix and TRISO coated particles, was measured and analyzed. SiC ceramics and FCM pellets were fabricated by hot press sintering with Al{sub 2}O{sub 3} and Y{sub 2}O{sub 3} sintering additives. Several factors that influence thermal conductivity, specifically the content of sintering additives for SiC ceramics and the volume fraction of TRISO particles and the matrix thermal conductivity of FCM pellets, were investigated. The thermal conductivity values of samples were analyzed on the basis of their microstructure and the arrangement of TRISO particles. The thermal conductivity of the FCM pellets was compared to that predicted by the Maxwell-Eucken equation and the thermal conductivity of TRISO coated particles was calculated. The thermal conductivity of FCM pellets in various sintering conditions was in close agreement to that predicted by the Maxwell-Eucken equation with the fitted thermal conductivity value of TRISO particles.

  14. In-Situ Observation of SiC Bulk Single Crystal Growth by XRD System

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    In-situ analysis for SiC bulk single crystal growth was reported using vertical X-ray diffractometer system. A furnace for SiC sublimation growth combined with the XRD system which possessed three kinds of functions including topography, rocking curve measurement and crystal growth rate monitoring was developed. These functions could contribute as a powerful tool finding the optimum growth condition by dynamic observation in the crucible. In this study, the in-situ X-ray topographs succeeded to capture dynamic elongation of defects and dislocation generated in the SiC growing crystals. The in-situ rocking curve measurement reviled appearance of mosaic structure in the SiC crystal grown with high growth rate. The in-situ growth rate monitoring also succeeded very precisely using the direct X-ray beam absorption. On the base of findings and facts obtained by the in-situ observations, the importance for the SiC growth was discussed.

  15. Investigation on The Properties of Fe-Si3N4 Bonded SiC Composite

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yong; FENG Di; PENG Dayan

    2005-01-01

    The mechanical properties of pressureless sintering Fe-Si3N4 bonded SiC and Si3 N4 bonded SiC with same manufacture process have been compared in this paper.The oxidizing mechanism of Fe-Si3 N4 bonded SiC ceramic matrix composite has been investigated especially through TG-DSC (thermo gravimetric analysis-differential scanning calorimeter) experiment. During oxidation procedure the main reaction is the oxidation of SiC and Si3N4, SiO2 which form protecting film to prevent further oxidizing. And residual iron in the samples become Fe2 O3 and Fe3O4, the oxidation kinetics at 1100 ~ 1300℃ of re-Si3 N4 bonded SiC has been studied especially. The weight gain per unit area at initial stage changes according to beeline rule, in the middle according to conic, and in the last oxidation period follows parabola rule.

  16. Highly flexible and robust N-doped SiC nanoneedle field emitters

    KAUST Repository

    Chen, Shanliang

    2015-01-23

    Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm-1, 1.55 V μm-1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. © 2015 Nature Publishing Group All rights reserved.

  17. X-ray fluorescence microtomography on a SiC nuclear fuel shell

    Energy Technology Data Exchange (ETDEWEB)

    Naghedolfeizi, M.; Chung, J.S.; Ice, G.E. [Oak Ridge National Lab., TN (United States). Metals and Ceramics Div.; Yun, W.B.; Cai, Z.; Lai, B. [Argonne National Lab., IL (United States). Advanced Photon Source

    1998-12-31

    TRISO fuel particles contain a small kernel of nuclear fuel encapsulated by alternating layers of C and a barrier layer of SiC. The TRISO fuel particle is used in an advanced nuclear fuel where the SiC shell provides the primary barrier for radioactive elements in the kernel. The performance of this barrier is key to containment. The authors have used x-ray fluorescence microtomography to measure the trace element distribution in a SiC shell. Prior to the measurements the nuclear fuel and C layers were leached from the particle. The shell was then encapsulated by kapton tape to simplify handling. The shell was mounted on a glass fiber and measurements were made with an {approximately} 1 x 3 {micro}m{sup 2} x-ray probe on beamline 2-ID at the APS. The distribution of trace elements in the SiC shell was reconstructed after correcting the data for artifacts arising from absorption and scattering off the kapton tape. The observed trace elements are distributed in small < 1 {micro}m regions through the SiC shell. The trace elements can be attributed to radiation enhanced diffusion of elements in the kernel or to trace elements introduced during fabrication. X-ray fluorescence microtomography is an ideal tool for this work because it is a penetrating nondestructive probe sensitive to trace elements in a low Z matrix and because it provides a picture of the elemental distribution in the shell.

  18. Ag Transport Through Non-Irradiated and Irradiated SiC

    Energy Technology Data Exchange (ETDEWEB)

    Szlufarska, Izabela [Univ. of Wisconsin, Madison, WI (United States); Morgan, Dane [Univ. of Wisconsin, Madison, WI (United States); Blanchard, James [Univ. of Wisconsin, Madison, WI (United States)

    2016-01-11

    Silicon carbide is the main barrier to diffusion of fission products in the current design of TRistuctural ISOtropic (TRISO) coated fuel particles, and Ag is one of the few fission products that have been shown to escape through this barrier. Because the SiC coating in TRISO is exposed to radiation throughout the lifetime of the fuel, understanding of how radiation changes the transport of the fission products is essential for the safety of the reactor. The goals of this project are: (i) to determine whether observed variation in integral release measurements of Ag through SiC can be explained by differences in grain size and grain boundary (GB) types among the samples; (2) to identify the effects of irradiation on diffusion of Ag through SiC; (3) to discover phenomena responsible for significant solubility of Ag in polycrystalline SiC. To address these goals, we combined experimental analysis of SiC diffusion couples with modeling studies of diffusion mechanisms through bulk and GBs of this material. Comparison between results obtained for pristine and irradiated samples brings in insights into the effects of radiation on Ag transport.

  19. Molecular systems biology of Sic1 in yeast cell cycle regulation through multiscale modeling.

    Science.gov (United States)

    Barberis, Matteo

    2012-01-01

    Cell cycle control is highly regulated to guarantee the precise timing of events essential for cell growth, i.e., DNA replication onset and cell division. Failure of this control plays a role in cancer and molecules called cyclin-dependent kinase (Cdk) inhibitors (Ckis) exploit a critical function in cell cycle timing. Here we present a multiscale modeling where experimental and computational studies have been employed to investigate structure, function and temporal dynamics of the Cki Sic1 that regulates cell cycle progression in Saccharomyces cerevisiae. Structural analyses reveal molecular details of the interaction between Sic1 and Cdk/cyclin complexes, and biochemical investigation reveals Sic1 function in analogy to its human counterpart p27(Kip1), whose deregulation leads to failure in timing of kinase activation and, therefore, to cancer. Following these findings, a bottom-up systems biology approach has been developed to characterize modular networks addressing Sic1 regulatory function. Through complementary experimentation and modeling, we suggest a mechanism that underlies Sic1 function in controlling temporal waves of cyclins to ensure correct timing of the phase-specific Cdk activities.

  20. Creep deformation of grain boundary in a highly crystalline SiC fibre.

    Science.gov (United States)

    Shibayama, Tamaki; Yoshida, Yutaka; Yano, Yasuhide; Takahashi, Heishichiro

    2003-01-01

    Silicon carbide (SiC) matrix composites reinforced by SiC fibres (SiC/SiC composites) are currently being considered as alternative materials in high Ni alloys for high-temperature applications, such as aerospace components, gas-turbine energy-conversion systems and nuclear fusion reactors, because of their high specific strength and fracture toughness at elevated temperatures compared with monolithic SiC ceramics. It is important to evaluate the creep properties of SiC fibres under tensile loading in order to determine their usefulness as structural components. However, it would be hard to evaluate creep properties by monoaxial tensile properties when we have little knowledge on the microstructure of crept specimens, especially at the grain boundary. Recently, a simple fibre bend stress relaxation (BSR) test was introduced by Morscher and DiCarlo to address this problem. Interpretation of the fracture mechanism at the grain boundary is also essential to allow improvement of the mechanical properties. In this paper, effects of stress applied by BSR test on microstructural evolution in advanced SiC fibres, such as Tyranno-SA including small amounts of Al, are described and discussed along with the results of microstructure analysis on an atomic scale by using advanced microscopy.

  1. Analysis of charge loss in nonvolatile memory with multi-layered SiC nanocrystals

    Science.gov (United States)

    Lee, Dong Uk; Lee, Tae Hee; Kim, Eun Kyu; Shin, Jin-Wook; Cho, Won-Ju

    2009-08-01

    A nonvolatile memory device with multilayered SiC nanocrystals for long-term data storage was fabricated, and its electrical properties were analyzed. The average size and density of the SiC nanocrystals, which were formed between the tunnel and control oxide layers, were approximately 5 nm and 2×1012 cm-2, respectively. The memory window of nonvolatile memory with the multilayer of SiC nanocrystals was about 2.5 V after program and erase voltages of ±12 V were applied for 500 ms, and then it was maintained at about 1.1 V for 105 s at 75 °C. The activation energy estimated from charge losses of 25% to 50% increased from 0.03 to 0.30 eV, respectively. The charge loss could be caused by a Pool-Frenkel current of holes and electrons between the SiC quantum dots and the carrier charge traps around the SiC nanocrystals embedded in SiO2 or the degradation effect of the tunnel oxide by stress induced leakage current.

  2. Pulmonary retention of ceramic fibers in silicon carbide (SiC) workers.

    Science.gov (United States)

    Dufresne, A; Loosereewanich, P; Armstrong, B; Infante-Rivard, C; Perrault, G; Dion, C; Massé, S; Bégin, R

    1995-05-01

    The fibrous inorganic content of post-mortem lung material obtained from 15 men who worked in the primary silicon carbide (SiC) industry was evaluated. Five men had neither lung fibrosis nor lung cancer (NFNC), six had lung fibrosis (LF), and four had lung fibrosis and lung cancer (LFLC). The workers had 23 to 32 years of exposure. Mean duration of exposure was 23.4 (SD 6.9) years in the NFNC group, 28.8 (SD 5.5) in the LF, and 32.3 (SD 9.0) in the LFLC group. Concentrations of SiC ceramic fibers and other fibrous minerals and angular particles were determined by transmission electron microscopy and energy dispersive spectroscopy. The geometric mean and geometric standard deviation lung concentrations of SiC ceramic fibers 0.1). Pulmonary retention of SiC fibers > or = 5 microns showed an excess in LF and LFLC cases combined versus NFNC that approached statistical significance (Mann-Whitney, p = 0.06). There was a somewhat greater difference for lung retention of ferruginous bodies between NFNC and either LF or LFLC cases (Mann-Whitney, p = 0.02). SiC fibers > or = 5 microns and angular particles containing Si and especially ferruginous bodies were found at higher concentrations in LF and LFLC than in NFNC cases.

  3. Epitaxy relationships between Ge-islands and SiC(0 0 0 1)

    Energy Technology Data Exchange (ETDEWEB)

    Ait-Mansour, K. [Faculte des Sciences, LPSE, UMR CNRS 7014, 4, rue des Freres Lumiere, 68093 Mulhouse, Cedex (France)]. E-mail: k.ait-mansour@uha.fr; Dentel, D. [Faculte des Sciences, LPSE, UMR CNRS 7014, 4, rue des Freres Lumiere, 68093 Mulhouse, Cedex (France); Kubler, L. [Faculte des Sciences, LPSE, UMR CNRS 7014, 4, rue des Freres Lumiere, 68093 Mulhouse, Cedex (France); Diani, M. [Departement de Physique, Faculte des Sciences et Techniques, LSGM, BP 416, Tanger, Maroc (Morocco); Bischoff, J.L. [Faculte des Sciences, LPSE, UMR CNRS 7014, 4, rue des Freres Lumiere, 68093 Mulhouse, Cedex (France); Bolmont, D. [Faculte des Sciences, LPSE, UMR CNRS 7014, 4, rue des Freres Lumiere, 68093 Mulhouse, Cedex (France)

    2005-03-15

    Reflection high-energy electron diffraction (RHEED) has been used to determine epitaxy relationships and in-plane orientations between Ge and SiC(0 0 0 1). Three monolayers of Ge have been deposited at 500 deg. C on a graphitized SiC (6{radical}3 x 6{radical}3)R30 deg. reconstructed surface, this surface supporting epitaxial Ge island growth in a Volmer-Weber mode. Nucleation of relaxed Ge-islands gives rise to transmission electron diffraction patterns allowing to deduce that pure Ge grows according to only one epitaxy relationship Ge{l_brace}1 1 1{r_brace}//SiC(0 0 0 1). These {l_brace}1 1 1{r_brace}-Ge-islands have two in-plane orientations, a preferential one, Ge<-1-12>//SiC<1-100> and a minority one, Ge<-1-12>//SiC<10-10>, deduced one from the other by a 30 deg. rotation around the <1 1 1>-Ge (or [0 0 0 1]-SiC) growth axis. Due to the three-fold symmetry of the {l_brace}1 1 1{r_brace}-Ge plane, each in-plane orientation is degenerated into two twin orientations, differing by a 180 deg. angle around Ge<111>.

  4. Pore Formation Process of Porous Ti3SiC2 Fabricated by Reactive Sintering

    Directory of Open Access Journals (Sweden)

    Huibin Zhang

    2017-02-01

    Full Text Available Porous Ti3SiC2 was fabricated with high purity, 99.4 vol %, through reactive sintering of titanium hydride (TiH2, silicon (Si and graphite (C elemental powders. The reaction procedures and the pore structure evolution during the sintering process were systematically studied by X-ray diffraction (XRD and scanning electron microscope (SEM. Our results show that the formation of Ti3SiC2 from TiH2/Si/C powders experienced the following steps: firstly, TiH2 decomposed into Ti; secondly, TiC and Ti5Si3 intermediate phases were generated; finally, Ti3SiC2 was produced through the reaction of TiC, Ti5Si3 and Si. The pores formed in the synthesis procedure of porous Ti3SiC2 ceramics are derived from the following aspects: interstitial pores left during the pressing procedure; pores formed because of the TiH2 decomposition; pores formed through the reactions between Ti and Si and Ti and C powders; and the pores produced accompanying the final phase synthesized during the high temperature sintering process.

  5. Cortical projections to the superior colliculus in tree shrews (Tupaia belangeri).

    Science.gov (United States)

    Baldwin, Mary K L; Wei, Haiyang; Reed, Jamie L; Bickford, Martha E; Petry, Heywood M; Kaas, Jon H

    2013-05-01

    The visuomotor functions of the superior colliculus depend not only on direct inputs from the retina, but also on inputs from neocortex. As mammals vary in the areal organization of neocortex, and in the organization of the number of visual and visuomotor areas, patterns of corticotectal projections vary. Primates in particular have a large number of visual areas projecting to the superior colliculus. As tree shrews are close relatives of primates, and they are also highly visual, we studied the distribution of cortical neurons projecting to the superior colliculus by injecting anatomical tracers into the colliculus. Since projections from visuotopically organized visual areas are expected to match the visuotopy of the superior colliculus, injections at different retinotopic locations in the superior colliculus provide information about the locations and organization of topographic areas in extrastriate cortex. Small injections in the superior colliculus labeled neurons in locations within areas 17 (V1) and 18 (V2) that are consistent with the known topography of these areas and the superior colliculus. In addition, the separate locations of clusters of labeled cells in temporal visual cortex provide evidence for five or more topographically organized areas. Injections that included deeper layers of the superior colliculus also labeled neurons in medial frontal cortex, likely in premotor cortex. Only occasional labeled neurons were observed in somatosensory or auditory cortex. Regardless of tracer injection location, we found that, unlike primates, a substantial projection to the superior colliculus from posterior parietal cortex is not a characteristic of tree shrews.

  6. Superiority in value and the repugnant conclusion

    DEFF Research Database (Denmark)

    Jensen, Karsten Klint

    2007-01-01

    James Griffin has considered a weak form of superiority in value a possible remedy to the Repugnant Conclusion. In this paper, I demonstrate that, in a context where value is additive, this weaker form collapses into a stronger form of superiority. And in a context where value is non-additive, weak...... superiority does not amount to a radical value difference at all. I then spell out the consequences of these results for different interpretations of Griffin's suggestion regarding population ethics. None of them comes out very successful, but perhaps they nevertheless retain some interest....

  7. Low Shear Strength and Shear-Induced Failure in Ti3SiC2

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Shear strength and shear-induced Hertzian contact damage in Ti3SiC2 were investigated using double-notched-beamspecimen and steel spherical indenter, respectively. The shear strength of 40 MPa that was only about 10% of bendingstrength was obtained for this novel ceramic. The SEM fractograph of specimens failed in shear test indicated acombination of intergranular and transgranular fracture. Under a contact load, plastic indent without cone crackcould be formed on the surface of Ti3SiC2 sample. Optical observation on side view showed half-circle cracks aroundthe damage zone below the indent, and the crack shape was consistent with the contrail of the principal shearingstress. The low shear strength and the shearing-activated intergranular sliding were confirmed being the key factorsfor failure in Ti3SiC2.

  8. Development of a PSpice Modeling Platform for SiC Power MOSFET Modules

    DEFF Research Database (Denmark)

    Ceccarelli, Lorenzo; Iannuzzo, Francesco; Nawaz, Muhammad

    2017-01-01

    The aim of this work is to present a PSpice implementation for a well-established and compact physics-based SiC MOSFET model, including a fast, experimental-based parameter extraction procedure in a MATLAB GUI environment. The model, originally meant for single-die devices, has been used to simul......The aim of this work is to present a PSpice implementation for a well-established and compact physics-based SiC MOSFET model, including a fast, experimental-based parameter extraction procedure in a MATLAB GUI environment. The model, originally meant for single-die devices, has been used...... to simulate the performance of high current rating (above 100 A), multi-chip SiC MOSFET modules, both for static and switching behavior. Therefore, the simulation results have been validated experimentally in a wide range of operating conditions, including high temperatures, gate resistance and stray elements...

  9. Microporous layer based on SiC for high temperature proton exchange membrane fuel cells

    Science.gov (United States)

    Lobato, Justo; Zamora, Héctor; Cañizares, Pablo; Plaza, Jorge; Rodrigo, Manuel Andrés

    2015-08-01

    This work reports the evaluation of Silicon Carbide (SiC) for its application in microporous layers (MPL) of HT-PEMFC electrodes and compares results with those obtained using conventional MPL based on Vulcan XC72. Influence of the support load on the MPL prepared with SiC was evaluated, and the MPL were characterized by XRD, Hg porosimetry and cyclic voltammetries. In addition, a short lifetest was carried out to evaluate performance in accelerated stress conditions. Results demonstrate that SiC is a promising alternative to carbonaceous materials because of its higher electrochemical and thermal stability and the positive effect on mass transfer associated to its different pore size distribution. Ohmic resistance is the most significant challenge to be overcome in further studies.

  10. The diffusion welding of 7075Al-3%SiC particles reinforced composites

    Science.gov (United States)

    Aydin, M.; Gürler, R.; Türker, M.

    2009-02-01

    A group of 3% SiC particle reinforced Al-7075 alloys was diffusion joined at 560°C between 1 h and 2 h durations under 2 MPa applied pressure in a vacuum of 2 × 10-3 Pa. Optical microscopy and SEM-EDS studies were used to characterise the weldment and the fracture surfaces of all samples investigated. A non-planar interface formation was observed at the bond interface. The maximum shear strength of 137 MPa was obtained with the composite 7075-3% SiC joined for two hours, which is 92% of the shear strength of the parent material. The fracture surface of the 7075-3% SiC composites displayed a non-planar fracture surfaces with some plastic deformation.

  11. Surface Oxidation of Al2O3/SiC Nanocomposite: Phase Transformation and Microstructure

    Institute of Scientific and Technical Information of China (English)

    Cai Shu; Peng Zhenzhen; Feng Jie; Lu Feng

    2005-01-01

    The surface oxidation behavior of pressureless sintered Al2O3/SiC nanocomposite was studied from 1000 to 1400 ℃ for more than 10 h in air. Weight gain during the process of heat treatment was measured by TG analysis. Phase transformation and microstructure changes of these specimens due to oxidation were investigated with X-ray diffraction (XRD), SEM and EDX technology. Thermogravimetric analysis show that the weight gain as a result of oxidation of SiC become significant above 1200 ℃. In the range of 1000~1300 ℃, the SiC grits are usually coated with a layer of amorphous silica after oxidation. Above 1300 ℃, the amorphous silica reacted with alumina matrix and formed mullite or crystallized into cristobalite. The rate of oxidation depends on the formation of dense cristobalite film. Large amount of needle-like mullite and alumina crystals are formed on the surface after oxidation at 1400 ℃.

  12. Al4SiC4 wurtzite crystal: Structural, optoelectronic, elastic, and piezoelectric properties

    Directory of Open Access Journals (Sweden)

    L. Pedesseau

    2015-12-01

    Full Text Available New experimental results supported by theoretical analyses are proposed for aluminum silicon carbide (Al4SiC4. A state of the art implementation of the density functional theory is used to analyze the experimental crystal structure, the Born charges, the elastic properties, and the piezoelectric properties. The Born charge tensor is correlated to the local bonding environment for each atom. The electronic band structure is computed including self-consistent many-body corrections. Al4SiC4 material properties are compared to other wide band gap wurtzite materials. From a comparison between an ellipsometry study of the optical properties and theoretical results, we conclude that the Al4SiC4 material has indirect and direct band gap energies of about 2.5 eV and 3.2 eV, respectively.

  13. Investigation of reactivity between SiC and Nb-1Zr in planned irradiation creep experiments

    Energy Technology Data Exchange (ETDEWEB)

    Lewinsohn, C.A.; Hamilton, M.L.; Jones, R.H.

    1997-08-01

    Thermodynamic calculations and diffusion couple experiments showed that SiC and Nb-1Zr were reactive at the upper range of temperatures anticipated in the planned irradiation creep experiment. Sputter-deposited aluminum oxide (Al{sub 2}O{sub 3}) was selected as a diffusion barrier coating. Experiments showed that although the coating coarsened at high temperature it was an effective barrier for diffusion of silicon from SiC into Nb-1Zr. Therefore, to avoid detrimental reactions between the SiC composite and the Nb-1Zr pressurized bladder during the planned irradiation creep experiment, a coating of Al{sub 2}O{sub 3} will be required on the Nb-1Zr bladder.

  14. Pseudo Dirac dispersion in Mn-intercalated graphene on SiC

    KAUST Repository

    Kahaly, M. Upadhyay

    2013-07-01

    The atomic and electronic structures of bulk C6Mn, bulk C 8Mn, and Mn-intercalated graphene on SiC(0 0 0 1) and SiC(0001̄) are investigated by density functional theory. We find for both configurations of Mn-intercalated graphene a nonmagnetic state, in agreement with the experimental situation for SiC(0 0 0 1), and explain this property. The electronic structures around the Fermi energy are dominated by Dirac-like cones at energies consistent with data from angular resolved photoelectron spectroscopy [Gao et al., ACS Nano. 6 (2012) 6562]. However, our results demonstrate that the corresponding states trace back to hybridized Mn d orbitals, and not to the graphene. © 2013 Elsevier B.V. All rights reserved.

  15. Layered SiC sheets: a potential catalyst for oxygen reduction reaction.

    Science.gov (United States)

    Zhang, P; Xiao, B B; Hou, X L; Zhu, Y F; Jiang, Q

    2014-01-22

    The large-scale practical application of fuel cells cannot come true if the high-priced Pt-based electrocatalysts for oxygen reduction reaction (ORR) cannot be replaced by other efficient, low-cost, and stable electrodes. Here, based on density functional theory (DFT), we exploited the potentials of layered SiC sheets as a novel catalyst for ORR. From our DFT results, it can be predicted that layered SiC sheets exhibit excellent ORR catalytic activity without CO poisoning, while the CO poisoning is the major drawback in conventional Pt-based catalysts. Furthermore, the layered SiC sheets in alkaline media has better catalytic activity than Pt(111) surface and have potential as a metal-free catalyst for ORR in fuel cells.

  16. A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs

    DEFF Research Database (Denmark)

    Ceccarelli, Lorenzo; Bahman, Amir Sajjad; Iannuzzo, Francesco

    The purpose of this work is to propose a novel electro-thermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice...... electrical model is capable to estimate the switching behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time (few seconds). The the thermal network elements are extracted from...... the FEM simulation of the DUT’s structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been...

  17. Cl-intercalated graphene on SiC: Influence of van der Waals forces

    KAUST Repository

    Cheng, Yingchun

    2013-01-01

    The atomic and electronic structures of Cl-intercalated epitaxial graphene on SiC are studied by first-principles calculations. By increasing the Cl concentration, doping levels from n-type to slightly p-type are achieved on the SiC(0001) surface, while a wider range of doping levels is possible on the SiC(0001̄) surface. We find that the Cl atoms prefer bonding to the substrate rather than to the graphene. By varying the Cl concentration the doping level can be tailored. Consideration of van der Waals forces improves the distance between the graphene and the substrate as well as the binding energy, but it is not essential for the formation energy. For understanding the doping mechanism the introduction of non-local van der Waals contributions to the exchange correlation functional is shown to be essential. Copyright © EPLA, 2013.

  18. Origin of the high p-doping in F intercalated graphene on SiC

    KAUST Repository

    Cheng, Yingchun

    2011-08-04

    The atomic and electronic structures of F intercalated epitaxialgraphene on a SiC(0001) substrate are studied by first-principles calculations. A three-step fluorination process is proposed. First, F atoms are intercalated between the graphene and the SiC, which restores the Dirac point in the band structure. Second, saturation of the topmost Si dangling bonds introduces p-doping up to 0.37 eV. Third, F atoms bond covalently to the graphene to enhance the p-doping. Our model explains the highly p-doped state of graphene on SiC after fluorination [A. L. Walter et al., Appl. Phys. Lett. 98, 184102 (2011)].

  19. Methods for growth of relatively large step-free SiC crystal surfaces

    Science.gov (United States)

    Neudeck, Philip G. (Inventor); Powell, J. Anthony (Inventor)

    2002-01-01

    A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.

  20. Layered SiC Sheets: A Potential Catalyst for Oxygen Reduction Reaction

    Science.gov (United States)

    Zhang, P.; Xiao, B. B.; Hou, X. L.; Zhu, Y. F.; Jiang, Q.

    2014-01-01

    The large-scale practical application of fuel cells cannot come true if the high-priced Pt-based electrocatalysts for oxygen reduction reaction (ORR) cannot be replaced by other efficient, low-cost, and stable electrodes. Here, based on density functional theory (DFT), we exploited the potentials of layered SiC sheets as a novel catalyst for ORR. From our DFT results, it can be predicted that layered SiC sheets exhibit excellent ORR catalytic activity without CO poisoning, while the CO poisoning is the major drawback in conventional Pt-based catalysts. Furthermore, the layered SiC sheets in alkaline media has better catalytic activity than Pt(111) surface and have potential as a metal-free catalyst for ORR in fuel cells.

  1. Friction stir spot welding of 2024-T3 aluminum alloy with SiC nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Paidar, Moslem; Sarab, Mahsa Laali [Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2016-01-15

    In this study, the Friction stir spot welding (FSSW) of 2024-T3 aluminum alloy with 1.6 mm thickness was investigated. The effects of the silicon carbide (SiC) nanoparticles on the metallurgical and mechanical properties were discussed. The effects of particles on tension shear and wear tests were also investigated. The process was conducted at a constant rotational speed of 1000 rpm. Results showed that adding SiC nanoparticles to the weld during FSSW had a major effect on the mechanical properties. In fact, the addition of nanoparticles as barriers prevented grain growth in the Stir zone (SZ). The data obtained in the tensile-shear and wear tests showed that tensile-shear load and wear resistance increased with the addition of SiC nanoparticles, which was attributed to the fine grain size produced in the SZ.

  2. Scalable nanostructuring on polymer by a SiC stamp: optical and wetting effects

    DEFF Research Database (Denmark)

    Argyraki, Aikaterini; Lu, Weifang; Petersen, Paul Michael;

    2015-01-01

    surface. The reflectance of SiC can be reduced down to 0.5% when the ~600nm nanostructures are applied on the surface (bare surface reflectance 25%). The texture of the green SiC color is changed when the different nanostructures are apparent. The ~600nm SiC nanostructures are replicated on polymer...... from 68 (bare) to 123 (nanostructured) degrees. The optical effect on the polymer surface can be maximized by applying a thin aluminum (Al) layer coating on the nanostructures (bare polymer reflectance 11%, nanostructured polymer reflectance 5%, Al coated nanostructured polymer reflectance 3......A method for fabricating scalable antireflective nanostructures on polymer surfaces (polycarbonate) is demonstrated. The transition from small scale fabrication of nanostructures to a scalable replication technique can be quite challenging. In this work, an area per print corresponding to a 2-inch...

  3. Heavy ion-induced damage in SiC Schottky barrier diode

    Energy Technology Data Exchange (ETDEWEB)

    Kamezawa, C. [Japan Aerospace Exploration Agency, Tsukuba Space Center, 2-1-1 Sengen, Ibaraki 305-8505 (Japan)]. E-mail: kamezawa.chihiro@jaxa.jp; Sindou, H. [Japan Aerospace Exploration Agency, Tsukuba Space Center, 2-1-1 Sengen, Ibaraki 305-8505 (Japan); Hirao, T. [Japan Atomic Energy Research Institute, Gunma 370-1292 (Japan); Ohyama, H. [Kumamoto National College of Technology, Kumamoto 861-1102 (Japan); Kuboyama, S. [Japan Aerospace Exploration Agency, Tsukuba Space Center, 2-1-1 Sengen, Ibaraki 305-8505 (Japan)

    2006-04-01

    Silicon carbide (SiC) is a very promising material for future electronic devices. Also it is an attractive material for space applications, that require long-term endurance and higher efficiency, where tolerance to space radiations is a major problem. In this study, we have performed some irradiation examinations and evaluations on a commercial SiC Schottky barrier diode by looking at the damage caused by ion incidence using heavy ions. Ions of Xe, Kr, Ar, Ne, and N, with specific energies, were used in the irradiation process. Sudden breakdown condition at higher bias voltage and gradual damage created by heavy ion incidence were confirmed. The collected charge spectra were also obtained and revealed mechanisms that resulted to permanent damage. The observed anomalous charge collection was an essential factor for the susceptibility. This indicates a problem that need to be solved in the future for SiC space application.

  4. Fabrication Of Al 2024/SiC Nanocomposite with Al and Cu Pure Coatings

    Directory of Open Access Journals (Sweden)

    P. Melali

    2015-06-01

    Full Text Available Composites find an important place as new advanced materials in last decades; those especially produced with nanoparticles reinforcements, attracts researchers and a number of researches were executed on this topic. In this study, Al-base 2024 alloy composites reinforced with SiC nanoparticles were fabricated and the effects of two different coating materials were investigated. Coatings were pure Al and Cu powder with constant grain particle size. The results show that the Al coating has impacts on grain size and the interface layer between reinforcement and matrix. The mechanism of formation of interface layer between SiC nanoparticles and the Al-base 2024 matrix with reinforced with Cu coated SiC particles is quite different.

  5. ToF-MEIS stopping measurements in thin SiC films

    Energy Technology Data Exchange (ETDEWEB)

    Linnarsson, M.K., E-mail: marga@kth.se [KTH Royal Institute of Technology, School of Information and Communication Technology, Integrated Circuits and Devices, P.O. Box E229, SE-16440 Kista-Stockhom (Sweden); Khartsev, S. [KTH Royal Institute of Technology, School of Information and Communication Technology, Integrated Circuits and Devices, P.O. Box E229, SE-16440 Kista-Stockhom (Sweden); Primetzhofer, D.; Possnert, G. [Uppsala University, Ångström Laboratory, Dept. of Physics and Astronomy, Ion Physics, P.O. Box 534, SE-751 21 Uppsala (Sweden); Hallén, A. [KTH Royal Institute of Technology, School of Information and Communication Technology, Integrated Circuits and Devices, P.O. Box E229, SE-16440 Kista-Stockhom (Sweden)

    2014-08-01

    Electronic stopping in thin, amorphous, SiC films has been studied by time-of-flight medium energy ion scattering and conventional Rutherford backscattering spectrometry. Amorphous SiC films (8, 21 and 36 nm) were prepared by laser ablation using a single crystalline silicon carbide target. Two kinds of substrate films, one with a lower atomic mass (carbon) and one with higher atomic mass (iridium) compared to silicon has been used. Monte Carlo simulations have been used to evaluate electronic stopping from the shift in energy for the signal scattered from Ir with and without SiC. The two kinds of samples are used to illustrate the strength and challenges for ToF-MEIS compared to conventional RBS.

  6. The Oxidation Rate of SiC in High Pressure Water Vapor Environments

    Science.gov (United States)

    Opila, Elizabeth J.; Robinson, R. Craig

    1999-01-01

    CVD SiC and sintered alpha-SiC samples were exposed at 1316 C in a high pressure burner rig at total pressures of 5.7, 15, and 25 atm for times up to 100h. Variations in sample emittance for the first nine hours of exposure were used to determine the thickness of the silica scale as a function of time. After accounting for volatility of silica in water vapor, the parabolic rate constants for Sic in water vapor pressures of 0.7, 1.8 and 3.1 atm were determined. The dependence of the parabolic rate constant on the water vapor pressure yielded a power law exponent of one. Silica growth on Sic is therefore limited by transport of molecular water vapor through the silica scale.

  7. Multi-response optimization of process parameters using Taguchi method and grey relational analysis during turning AA 7075/SiC composite in dry and spray cooling environments

    Directory of Open Access Journals (Sweden)

    P. C. Mishra

    2015-09-01

    Full Text Available Turning experiments were carried out on AA 7075/SiC composite workpiece in dry and spray cooling environments based on L16 Taguchi design of experiments. Multiple performance optimization of process parameters was performed using grey relational analysis. The performance characteristics considered were average surface roughness, cutting tool temperature and material removal rate. Uncoated carbide inserts were used for machining the workpiece in a high speed precision lathe. A grey relational grade obtained from grey relational analysis was used to optimize the process parameters. Optimal combination of process parameters was then determined by the Taguchi method using the grey relational grade as the performance index. Experimental results indicated that the turning in spray cooling environment was beneficial compared to that in dry environment for the quality response characteristics under consideration. Analysis of variance showed that feed was the most significant parameter for the multiple performance characteristics during turning in both the environments.

  8. Wetting and Reaction Characteristics of Al2O3/SiC Composite Refractories

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Jing [ORNL; Hemrick, James Gordon [ORNL; Peters, Klaus-Markus [ORNL; Liu, Xingbo [ORNL; Barbero, Ever J [ORNL

    2007-01-01

    The reactive wetting behavior of three types of alumina-silicon carbide composite refractory materials was investigated in contact with molten aluminum (Al) and Al alloy using an optimized sessile drop method at 900oC in a purified Ar-4% H2 atmosphere. The time dependent behavior of contact angle and droplet geometry was monitored and the wetting kinetics was identified. The initial contact angle between the liquid Al/Al alloy and two of the refractory substrates was found to be an obtuse angle, which gradually changed to a 90o angle and then eventually to an acute angle with time. However, the wetting angle for the third refractory substrate was found to stay at an obtuse angle for the entire two-hour duration of the experiment. The difference in wetting properties among three types of refractories is attributed to be due to their microstructural and compositional variations. The significant effect of the alloying magnesium added to the molten Al alloy droplets in regard to the wetting kinetics and the influence on the reaction with the refractory substrates is discussed. The results obtained provide important understanding on the wetting and corrosion mechanisms of alumina and silicon carbide materials in contact with molten aluminum.

  9. Mechanism of Enhancement in Electromagnetic Properties of MgB2 by Nano SiC Doping

    NARCIS (Netherlands)

    Dou, S.X.; Shcherbakova, O.; Yeoh, W.K.; Kim, J.H.; Soltanian, S.; Wang, X.L.; Senatore, C.; Flukiger, R.; Dhallé, M.; Husnjak, O.; Babic, E.

    2007-01-01

    A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances Hc2, while the defects, small grain size, and nanoinclusions induced by C incorporation and lo

  10. Efficiency and Cost Comparison of Si IGBT and SiC JFET Isolated DC/DC Converters

    DEFF Research Database (Denmark)

    Nielsen, Rasmus Ørndrup; Török, Lajos; Munk-Nielsen, Stig

    2013-01-01

    . An efficiency of above 97 % for the SiC JFET and over 90 % for the SI IGBT converter was measured. Cost differences between the two converters have been analyzed, showing that 772 days of operation are needed for the SiC converter costs to break even with the Si IGBT converter costs....

  11. Fluidity and microstructure formation during flow of Al- SiC particle composites

    Science.gov (United States)

    Yarandi, F. M.; Rohatgi, P. K.; Ray, S.

    1993-06-01

    This article presents the results of casting and spiral fluidity in a Al-7 wt% Si alloy reinforced with 10,15, and 20 vol% SiC particles in permanent molds. The fluidity of the Al-SiC slurry increases linearly with temperature up to about 760 °C. Above this temperature, the casting fluidity of the Al-SiC particle slurry does not change significantly with an increase in temperature. In several cases, the fluidity decreased at temperatures above 760 °C. The fluidity of Al-SiC melts containing 9-μm SiC particles decreased with an increase in volume percentage of SiC up to 15 vol% (the range studied), presumably due to an increase in the viscosity of the melt with increasing volume percentage of dispersoid and changes in thermophysical properties of the composite. However, the fluidity of Al-20 vol% SiC of 14-μm particle size is higher than the fluidity of Al-15 vol% SiC 9-μm particles, indicating the role of particle size and surface area in de-creasing fluidity. Composite slurries travel farther in a channel of larger cross sections compared to channels of smaller cross sections under similar conditions. Casting fluidity increases linearly with an in-crease in cross section of the channel. A model has been proposed to calculate the values of fluidity of the composite as a function of particle volume percent, superheat, flow velocity of the melt, and the cross sec-tion of the flow channel. Experimental observations have been compared with the predictions of the model, and some deviations have been attributed to settling and segregation of SiC particles observed through microstructural examination.

  12. Fabrication of SiC Reinforced Zr0{sub 2} Composites via Polymeric Precursor Route

    Energy Technology Data Exchange (ETDEWEB)

    Mistarihi, Qusai M.; Hong, Soon Hyung; Ryu, Ho Jin [KAIST, Daejeon (Korea, Republic of)

    2015-10-15

    This indicates that as a result of the decomposition of the SMP-730 at temperatures less than or equal to 1500 .deg. C, amorphous SiC was formed. This study suggests that a higher compaction pressure followed by an intermediate decomposition temperature of the polymeric precursor and a higher sintering temperature are needed in order to fabricate interconnected SiC-ZrO{sub 2} composites. A. Ortona et al. fabricated ZrB2-SiC composites with SiC phase surrounding the grains of ZrB2 matrix through a polymeric precursor route by using Si and phenol. S. Li et al. measured the thermal conductivity of Al composites reinforced with a continuous phase SiC and SiC particles and found that the difference in the thermal conductivity measured at room temperature was about 70.2 W/m.K. To the best of authors' knowledge, no study has been performed about the fabrication of the connected SiC microstructure to improve the thermophysical properties of oxides. Zirconium dioxide (ZrO{sub 2}) is one of the potential candidates for use as a matrix for inert matrix fuels (IMF) due to its low neutron absorption cross section, chemical stability, and the compatibility with water. Irradiation and chemical stability testes performed on yttria stabilized zirconia (YSZ) and calcium stabilized zirconia (CSZ) have shown that they have a good irradiation and chemical stability. Despite the good irradiation and chemical stability, its low thermal conductivity is considered the main disadvantage of YSZ. Core loading with the YSZ IMF pellets experienced about a 100 K higher center line temperature than the limit specified for UO{sub 2}.

  13. On-chip temperature monitoring of a SiC current limiter

    Energy Technology Data Exchange (ETDEWEB)

    Tournier, D.; Godignon, P.; Millan, J. [Centro Nacional de Microelectronica (CNM), Univ. Autonoma de Barcelona, Bellaterra (Spain); Planson, D.; Chante, J.P. [Centre de Genie Electrique de Lyon (CEGELY) INSA-LYON, UMR 5005 CNRS, Villeurbanne (France); Sarrus, F.; Palma, J.F. de [Ferraz Shawmut, Bonnet de Mure (France)

    2004-07-01

    High voltage and high current potentiality of SiC based devices has been proved, and various devices able to work at high temperature have been reported as well. Nevertheless, packaging is one of the main constrains for high temperature operation of these devices. Up to date, no specific power package has been reported for high temperature operation. Moreover, it is desirable to predict the SiC die temperature to avoid any related failure in order to improve the efficiency of the packaged SiC device. This paper deals with an integrated temperature sensor for SiC current limiting devices. The current limiter is based on a VJFET structure, which capability for dissipating high power density (140 kW/cm{sup 2}), in the limiting state, has been previously demonstrated. Carrier mobility dependence with temperature was extracted from cryogenic measurements. The temperature estimation is based on the measurement of the variation of the electrical resistance (caused by mobility variation) of the sensing device integrated with the current limiter. In this paper we first describe the temperature estimation methodology using various technological solution (from metallic resistor solution to the SiC integrated sensor). Then experimental temperature measurements using an integrated SiC sensor within a packaged current limiting devices will be presented. Electro-thermal measurements on the fabricated devices show that the current limiter is able to work at 205 C under steady state conditions (320 V), without degrading their electrical performances. Finally, perspectives in terms of integration and reliability will be proposed. (orig.)

  14. Proposal of a SiC disposal canister for very deep borehole disposal

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Heui-Joo; Lee, Minsoo; Lee, Jong-Youl; Kim, Kyungsu [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-10-15

    In this paper authors proposed a silicon carbide, SiC, disposal canister for the DBD concept in Korea. A. Kerber et al. first proposed the SiC canister for a geological disposal of HLW, CANDU or HTR spent nuclear fuels. SiC has some drawbacks in welding or manufacturing a large canister. Thus, we designed a double layered disposal canister consisting of a stainless steel outer layer and a SiC inner layer. KAERI has been interested in developing a very deep borehole disposal (DBD) of HLW generated from pyroprocessing of PWR spent nuclear fuel and supported the relevant R and D with very limited its own budget. KAERI team reviewed the DBD concept proposed by Sandia National Laboratories (SNL) and developed its own concept. The SNL concept was based on the steel disposal canister. The authors developed a new technology called cold spray coating method to manufacture a copper-cast iron disposal canister for a geological disposal of high level waste in Korea. With this method, 8 mm thin copper canister with 400 mm in diameter and 1200 mm in height was made. In general, they do not give any credit on the lifetime of a disposal canister in DBD concept unlike the geological disposal. In such case, the expensive copper canister should be replaced with another one. We designed a disposal canister using SiC for DBD. According to an experience in manufacturing a small size canister, the fabrication of a large-size one is a challenge. Also, welding of SiC canister is not easy. Several pathways are being paved to overcome it.

  15. Advantages and Limits of 4H-SIC Detectors for High- and Low-Flux Radiations

    Science.gov (United States)

    Sciuto, A.; Torrisi, L.; Cannavò, A.; Mazzillo, M.; Calcagno, L.

    2017-07-01

    Silicon carbide (SiC) detectors based on Schottky diodes were used to monitor low and high fluxes of photons and ions. An appropriate choice of the epilayer thickness and geometry of the surface Schottky contact allows the tailoring and optimizing the detector efficiency. SiC detectors with a continuous front electrode were employed to monitor alpha particles in a low-flux regime emitted by a radioactive source with high energy (>5.0 MeV) or generated in an ion implanter with sub-MeV energy. An energy resolution value of 0.5% was measured in the high energy range, while, at energy below 1.0 MeV, the resolution becomes 10%; these values are close to those measured with a traditional silicon detector. The same SiC devices were used in a high-flux regime to monitor high-energy ions, x-rays and electrons of the plasma generated by a high-intensity (1016 W/cm2) pulsed laser. Furthermore, SiC devices with an interdigit Schottky front electrode were proposed and studied to overcome the limits of the such SiC detectors in the detection of low-energy (˜1.0 keV) ions and photons of the plasmas generated by a low-intensity (1010 W/cm2) pulsed laser. SiC detectors are expected to be a powerful tool for the monitoring of radioactive sources and ion beams produced by accelerators, for a complete characterization of radiations emitted from laser-generated plasmas at high and low temperatures, and for dosimetry in a radioprotection field.

  16. Fatigue Life and Microstructure after Multiple Remelting of A359 Matrix Composites Reinforced with SiC Particles

    Directory of Open Access Journals (Sweden)

    Klasik A.

    2016-12-01

    Full Text Available The article presents the results of fatigue life tests and microstructure examinations of A359 alloy matrix composites (F3S.10S and F3S.30S containing 10 and 30wt% of SiC particles, subjected to multiple remelting by conventional gravity casting. Mechanical characteristics were determined in a modified low cycle fatigue (MLCF test, enabling rapid estimation of fatigue life and other mechanical parameters in practice of any material. Qualitative and quantitative metallographic examinations were also carried out. The quantitative evaluation of microstructure was performed by computer image analysis. A set of geometrical parameters of the reinforcing particles, pores and eutectic precipitates present in the metal matrix was determined. The relationships between the mechanical parameters, structural characteristics and the number of remelting operations were presented. It was found that up to the fourth remelting, the mechanical characteristics, including fatigue life, are slightly deteriorated but decrease gradually in the subsequent operations of remelting. The observed effect is mainly due to the shrinkage porosity occurring as a result of gravity casting. To eliminate this defect, the use of squeeze casting process was recommended. It has also been shown that multiple remelting can be an easy and economically well-founded alternative to other more expensive recycling methods.

  17. Characteristics of Successful Entrepreneurs.

    Science.gov (United States)

    McClelland, David C.

    1987-01-01

    Comparison of characteristics of 12 average and 12 superior small business people in three developing nations (India, Malawi, and Ecuador) found proactive qualities such as initiative and assertiveness, achievement orientation, and commitment to others characteristic of successful entrepreneurs. Other expected qualities (self-confidence,…

  18. Characteristics of Successful Entrepreneurs.

    Science.gov (United States)

    McClelland, David C.

    1987-01-01

    Comparison of characteristics of 12 average and 12 superior small business people in three developing nations (India, Malawi, and Ecuador) found proactive qualities such as initiative and assertiveness, achievement orientation, and commitment to others characteristic of successful entrepreneurs. Other expected qualities (self-confidence,…

  19. Surface finish effects and the strength-grain size relation in SiC

    Science.gov (United States)

    Cranmer, D. C.; Tressler, R. E.; Bradt, R. C.

    1977-01-01

    The effect of surface finish on the strength-grain size relation was investigated for dense hot-pressed SiC. Failure initiated predominantly via the propagation of extrinsic machining-induced flaws for the range of grain sizes and machining grit sizes studied. These results are consistent with the region of large-grain-size flaw control as delineated by Prochazka and Charles. The severity of machining-induced flaws, relative to the machining grit size, decreased with increasing machining grit size and decreasing SiC grain size.

  20. La théorie des industries culturelles (et informationnelles, composante des SIC

    Directory of Open Access Journals (Sweden)

    Bernard Miège

    2012-09-01

    Full Text Available Inaugurer le Cahier central de la Revue des SIC est certes une forme de reconnaissance, mais cela comporte des obligations, au premier rang desquelles la nécessité d’intéresser des lecteurs a priori pas immédiatement concernés par la thématique.Si la théorie des industries culturelles est devenue progressivement une approche marquante des SIC, en France, en Europe et plus largement encore (avec des dénominations variables et des modalités spécifiques, ce n’est en effet ni en le proclamant ha...

  1. Quasi-Freestanding multilayer graphene films on the carbon face of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Siegel, D. A.; Hwang, C. G.; Fedorov, A. V.; Lanzara, A.

    2010-06-30

    The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking. The band structure of quasi-freestanding AB-bilayers is directly compared with bilayer graphene grown on the Si-face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly freestanding from an electronic point of view, due to the rotations between graphene layers.

  2. drs (Distantly Related sic) Gene Polymorphisms among emm12-Type Streptococcus pyogenes Isolates

    Science.gov (United States)

    Brandt, Claudia M.; Haase, Gerhard; Spellerberg, Barbara; Holland, Regina; Lütticken, Rudolf

    2003-01-01

    Twenty-eight emm12-type Streptococcus pyogenes isolates from patients with invasive and noninvasive infections or from asymptomatic carriers were genetically typed. Sequencing of drs (distantly related sic [streptococcal inhibitor of complement]) genes identified two novel alleles and revealed a polymorphism for drs similar to that of sic. No association was observed between the five different drs alleles and the five restriction patterns of the vir regulon for the isolates studied. These data suggest that drs sequencing may be useful for further differentiation of S. pyogenes isolates with emm12 and identical vir regulon restriction patterns. PMID:12682191

  3. PSpice Modeling Platform for SiC Power MOSFET Modules with Extensive Experimental Validation

    DEFF Research Database (Denmark)

    Ceccarelli, Lorenzo; Iannuzzo, Francesco; Nawaz, Muhammad

    2016-01-01

    The aim of this work is to present a PSpice implementation for a well-established and compact physics-based SiC MOSFET model, including a fast, experimental-based parameter extraction procedure in a MATLAB GUI environment. The model, originally meant for single-die devices, has been used to simul......The aim of this work is to present a PSpice implementation for a well-established and compact physics-based SiC MOSFET model, including a fast, experimental-based parameter extraction procedure in a MATLAB GUI environment. The model, originally meant for single-die devices, has been used...

  4. Preparation of patterned SiC and SiCN microstructures

    Institute of Scientific and Technical Information of China (English)

    WANG; Hao; SUNG; In-kyung; LI; Xiaodong; KIM; Dong-pyo

    2006-01-01

    Patterned SiC and SiCN microstructures were successfully fabricated on the silicon substrates by using polydimethylsiloxane (PDMS) elastometric stamp as template, polycarbosilane (PCS) and polysilazane (PSZ) as preceramic polymers. The preparing process was followed by precursor infiltration, the curing of the precursor, demolding of the template and pyrolysis of the cured preceramic polymer pattern. It shows that the dimensions of the ceramic patterns can be tailored by using the PDMS molds with different dimensions. The produced ceramic microstructures can be potentially applied in high temperature and high pressure environments due to the advanced properties of the SiC and SiCN ceramics.

  5. Quasi-Freestanding multilayer graphene films on the carbon face of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Siegel, D. A.; Hwang, C. G.; Fedorov, A. V.; Lanzara, A.

    2010-06-30

    The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking. The band structure of quasi-freestanding AB-bilayers is directly compared with bilayer graphene grown on the Si-face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly freestanding from an electronic point of view, due to the rotations between graphene layers.

  6. Fabrication of broadband antireflective sub-wavelength structures on fluorescent SiC

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicus, V.; Kaiser, M.

    2013-01-01

    Surface nanocones on 6H-SiC have been developed and demonstrated as an effective method of enhancing the light extraction efficiency from fluorescent SiC layers. The surface reflectance, measured from the opposite direction of light emission, over a broad bandwidth range is significantly suppress...... from 20.5% to 1.0 % after introducing the sub-wavelength structures. An omnidirectional light harvesting enhancement (>91%), is also achieved which promotes fluorescent SiC as a good candidate of wavelength converter for white light-emitting diodes....

  7. Bipolar integrated circuits in SiC for extreme environment operation

    Science.gov (United States)

    Zetterling, Carl-Mikael; Hallén, Anders; Hedayati, Raheleh; Kargarrazi, Saleh; Lanni, Luigia; Malm, B. Gunnar; Mardani, Shabnam; Norström, Hans; Rusu, Ana; Saveda Suvanam, Sethu; Tian, Ye; Östling, Mikael

    2017-03-01

    Silicon carbide (SiC) integrated circuits have been suggested for extreme environment operation. The challenge of a new technology is to develop process flow, circuit models and circuit designs for a wide temperature range. A bipolar technology was chosen to avoid the gate dielectric weakness and low mobility drawback of SiC MOSFETs. Higher operation temperatures and better radiation hardness have been demonstrated for bipolar integrated circuits. Both digital and analog circuits have been demonstrated in the range from room temperature to 500 °C. Future steps are to demonstrate some mixed signal circuits of greater complexity. There are remaining challenges in contacting, metallization, packaging and reliability.

  8. Role of Defects in Swelling and Creep of Irradiated SiC

    Energy Technology Data Exchange (ETDEWEB)

    Szlufarska, Izabela [Univ. of Wisconsin, Madison, WI (United States); Voyles, Paul [Univ. of Wisconsin, Madison, WI (United States); Sridharan, Kumar [Univ. of Wisconsin, Madison, WI (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2016-01-16

    Silicon carbide is a promising cladding material because of its high strength and relatively good corrosion resistance. However, SiC is brittle and therefore SiC-based components need to be carefully designed to avoid cracking and failure by fracture. In design of SiC-based composites for nuclear reactor applications it is essential to take into account how mechanical properties are affected by radiation and temperature, or in other words, what strains and stresses develop in this material due to environmental conditions. While thermal strains in SiC can be predicted using classical theories, radiation-induced strains are much less understood. In particular, it is critical to correctly account for radiation swelling and radiation creep, which contribute significantly to dimensional instability of SiC under radiation. Swelling typically increases logarithmically with radiation dose and saturates at relatively low doses (damage levels of a few dpa). Consequently, swelling-induced stresses are likely to develop within a few months of operation of a reactor. Radiation-induced volume swelling in SiC can be as high as 2%, which is significantly higher than the cracking strain of 0.1% in SiC. Swelling-induced strains will lead to enormous stresses and fracture, unless these stresses can be relaxed via some other mechanism. An effective way to achieve stress relaxation is via radiation creep. Although it has been hypothesized that both radiation swelling and radiation creep are driven by formation of defect clusters, existing models for swelling and creep in SiC are limited by the lack of understanding of specific defects that form due to radiation in the range of temperatures relevant to fuel cladding in light water reactors (LWRs) (<1000°C). For example, defects that can be detected with traditional transmission electron microscopy (TEM) techniques account only for 10-45% of the swelling measured in irradiated SiC. Here, we have undertaken an integrated experimental and

  9. Producing composite materials based on ZrB2, ZrB2-SiC

    Science.gov (United States)

    Mirovoi, Yu A.; Burlachenko, A. G.; Buyakova, S. P.; Sevostiyanova, I. N.; Kulkov, S. N.

    2016-11-01

    The effect of mechanical treatment by planetary ball milling on the properties of hot pressed ZrB2 - SiC ceramics was studied. It has been shown that material densification after mechanical treatment is finished at initial stages of sintering process. Addition of SiC causes a substantial increase in density of the sample to 99% of the theoretical powder containing 20% of silicon carbide, in comparison with samples ZrB2 density not exceeding 76%. It has been shown that all defects which were accumulated during mechanical treatment anneal in hot pressure process and there are no any changes of CDD values in sintered ceramics.

  10. Ab initio quasiparticle energies in 2H, 4H, and 6H SiC

    Science.gov (United States)

    Ummels, R. T. M.; Bobbert, P. A.; van Haeringen, W.

    1998-09-01

    Ab initio quasiparticle energies are calculated for the 2H, 4H, and 6H polytypes of SiC within the GW approximation for the self-energy. The starting point is a calculation within the pseudopotential local-density approximation framework. The calculated fundamental gaps of 3.15, 3.35, and 3.24 eV for 2H, 4H, and 6H SiC, respectively, show very good agreement with experimental data. The energy dependence of the screened interaction is modeled by a plasmon pole model from which the plasmon band structures are obtained.

  11. Millian superiorities and the repugnant conclusion

    DEFF Research Database (Denmark)

    Jensen, Karsten Klint

    2008-01-01

    James Griffin has considered a form of superiority in value that is weaker than lexical priority as a possible remedy to the Repugnant Conclusion. In this article, I demonstrate that, in a context where value is additive, this weaker form collapses into the stronger form of superiority. And in a ......James Griffin has considered a form of superiority in value that is weaker than lexical priority as a possible remedy to the Repugnant Conclusion. In this article, I demonstrate that, in a context where value is additive, this weaker form collapses into the stronger form of superiority...... of these results for different interpretations of Griffin's suggestion regarding population ethics. None of them comes out very successful, but perhaps they nevertheless retain some interest....

  12. Measuring Financial Gains from Genetically Superior Trees

    Science.gov (United States)

    George Dutrow; Clark Row

    1976-01-01

    Planting genetically superior loblolly pines will probably yield high profits.Forest economists have made computer simulations that predict financial gains expected from a tree improvement program under actual field conditions.

  13. Superior mesenteric artery syndrome causing growth retardation

    Directory of Open Access Journals (Sweden)

    Halil İbrahim Taşcı

    2013-03-01

    Full Text Available Superior mesenteric artery syndrome is a rare and lifethreateningclinical condition caused by the compressionof the third portion of the duodenum between the aortaand the superior mesenteric artery’s proximal part. Thiscompression may lead to chronic intermittent, acute totalor partial obstruction. Sudden weight-loss and the relateddecrease in the fat tissue are considered to be the etiologicalreason of acute stenosis. Weight-loss accompaniedby nausea, vomiting, anorexia, epigastric pain, andbloating are the leading complaints. Barium radiographs,computerized tomography, conventional angiography,tomographic and magnetic resonance angiography areused in the diagnosis. There are medical and surgical approachesto treatment. We hereby present the case ofa patient with superior mesenteric artery syndrome withdelayed diagnosis.Key words: superior mesenteric artery syndrome, nausea-vomiting, anorexia

  14. Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

    Science.gov (United States)

    Esakky, Papanasam; Kailath, Binsu J.

    2017-08-01

    HfO2 as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO2/SiC capacitors offer higher sensitivity than SiO2/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO2/SiC interface. Effect of post deposition annealing in N2O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO2/SiC MIS capacitors are reported in this work. N2O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N2 result in formation of Hf silicate at the HfO2/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N2O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO2/SiC capacitors.

  15. Nanomechanical properties of SiC films grown from C{sub 60} precursors using atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Morse, K. [Colorado School of Mines, Golden, CO (United States); Balooch, M.; Hamza, A.V.; Belak, J. [Lawrence Livermore National Lab., CA (United States)

    1994-12-01

    The mechanical properties of SiC films grown via C{sub 60} precursors were determined using atomic force microscopy (AFM). Conventional silicon nitride and modified diamond cantilever AFM tips were employed to determine the film hardness, friction coefficient, and elastic modulus. The hardness is found to be between 26 and 40 GPa by nanoindentation of the film with the diamond tip. The friction coefficient for the silicon nitride tip on the SiC film is about one third that for silicon nitride sliding on a silicon substrate. By combining nanoindentation and AFM measurements an elastic modulus of {approximately}300 GPa is estimated for these SiC films. In order to better understand the atomic scale mechanisms that determine the hardness and friction of SiC, we simulated the molecular dynamics of a diamond indenting a crystalline SiC substrate.

  16. PREPARATION OF LEAD-ACID BATTERY USING ELECTROPLATED RETICULATED SiC AS THE POSITIVE CURRENT COLLECTOR

    Institute of Scientific and Technical Information of China (English)

    Z.M. Zou; X.M. Cao; C. Tian; J.S. Zhang

    2005-01-01

    The possibility of using Pb-electroplated reticulated SiC as the positive current collector for lead-acid batteries was investigated. Reticulated SiC with two aperture sizes (3 and 2mm) were tested as the substrate of positive electrode. It was found that the reticulated SiC has an excellent corrosion resistance in H2SO4 solution, and the Pb layer electroplated on reticulated SiC showed analogous electrochemical behavior to metal Ph. Preliminary test of the battery performance indicated that the utilization efficiency of the positive active mass of new designed batteries are improved compared with the conventional batteries. The improvement could be ascribed to the high specific surface area of the reticulated structured positive current collector, which was further supported by the even better performance of the battery made from a smaller aperture size (2mm) reticulated SiC as the substrate of the positive electrode.

  17. Leiomyosarcoma of the superior vena cava.

    Science.gov (United States)

    de Chaumont, Arthus; Pierret, Charles; de Kerangal, Xavier; Le Moulec, Sylvestre; Laborde, François

    2014-08-01

    Leiomyosarcoma of the superior vena cava is a very rare tumor and only a few cases have been reported, with various techniques of vascular reconstruction. We describe a new case of leiomyosarcoma of the superior vena cava in a 61-year-old woman with extension to the brachiocephalic arterial trunk. Resection and vascular reconstruction were performed using, respectively, polytetrafluoroethylene and polyethylene terephtalate vascular grafts.

  18. Superior mesenteric artery compression syndrome - case report

    OpenAIRE

    Paulo Rocha França Neto; Rodrigo de Almeida Paiva; Antônio Lacerda Filho; Fábio Lopes de Queiroz; Teon Noronha

    2011-01-01

    Superior mesenteric artery syndrome is an entity generally caused by the loss of the intervening mesenteric fat pad, resulting in compression of the third portion of the duodenum by the superior mesenteric artery. This article reports the case of a patient with irremovable metastatic adenocarcinoma in the sigmoid colon, that evolved with intense vomiting. Intestinal transit was carried out, which showed important gastric dilation extended until the third portion of the duodenum, compatible wi...

  19. Solar cells and thin film LED using amorphous SiC. Amorphous SiC wo mochiita taiyou denchi oyobi usumaku LED

    Energy Technology Data Exchange (ETDEWEB)

    Hamakawa, Y. (Osaka Univ., Osaka (Japan). Faculty of Engineering Science)

    1990-03-25

    This paper introduced the photoelectric properties of amorphous SiC (a-SiC), application to highly efficient solar cells, application to wide area emitting elements such as LED (light emitting diode) and application to OEIC (optoelectronic integrated circuit) which is expected in near future. The light sensitizing effect in which photoconductivity of a-SiC:H film increases 2-3 figures by B dopping, was found. Flexible and wide area thin film LED has been able to manufacture by this discovery. In addition, highly efficient conversion rate has been able to get by the technical development such as solar cells made of a-SiC/ a-Si hetrojunction. Further, wide area sollar cells has been able to manufacture on any substrate by the development of TFLED (thin film light emitting diode). The application of TFLED made of SiC to OEIC is also investigated. 18 refs., 15 figs., 2 tabs.

  20. Testing of porous SiC with dense coating under relevant conditions for Flow Channel Insert application

    Energy Technology Data Exchange (ETDEWEB)

    Ordás, N., E-mail: nordas@ceit.es [CEIT and Tecnun (University of Navarra), Manuel de Lardizábal 15, 20018 San Sebastián (Spain); Bereciartu, A.; García-Rosales, C. [CEIT and Tecnun (University of Navarra), Manuel de Lardizábal 15, 20018 San Sebastián (Spain); Moroño, A.; Malo, M.; Hodgson, E.R. [CIEMAT, Avenida Complutense 22, 28040 Madrid (Spain); Abellà, J.; Colominas, S. [Institut Químic de Sarrià, University Ramon Llull, Via Augusta 390, 08017 Barcelona (Spain); Sedano, L. [CIEMAT, Avenida Complutense 22, 28040 Madrid (Spain)

    2014-10-15

    Highlights: • Porous SiC coated by CVD with a dense coating was developed for Flow Channel Inserts (FCI) in dual-coolant blanket concept. • Porous SiC was obtained following the sacrificial template technique, using Al{sub 2}O{sub 3} and Y{sub 2}O{sub 3} as sintering additives. • Flexural strength, thermal and electrical conductivity, and microstructure of uncoated and coated porous SiC are presented. • Adhesion of coating to porous SiC and its corrosion behavior under Pb-17.5Li at 700 °C are shown. - Abstract: Thermally and electrically insulating porous SiC ceramics are attractive candidates for Flow Channel Inserts (FCI) in dual-coolant blanket concepts thanks to its relatively inexpensive manufacturing route. To prevent tritium permeation and corrosion by Pb-15.7 a dense coating has to be applied on the porous SiC. Despite not having structural function, FCI must exhibit sufficient mechanical strength to withstand strong thermal gradients and thermo-electrical stresses during operation. This work summarizes the results on the development of coated porous SiC for FCI. Porous SiC was obtained following the sacrificial template technique, using Al{sub 2}O{sub 3} and Y{sub 2}O{sub 3} as sintering additives and a carbonaceous phase as pore former. Sintering was performed in inert gas at 1850–1950 °C during 15 min to 3 h, followed by oxidation at 650 °C to eliminate the carbonaceous phase. The most promising bulk materials were coated with a ∼30 μm thick dense SiC by CVD. Results on porosity, bending tests, thermal and electrical conductivity are presented. The microstructure of the coating, its adhesion to the porous SiC and its corrosion behavior under Pb-17.5Li are also shown.

  1. Nickel matrix composite electro coatings containing high concentration of incorporated Sic; Rivestimenti lettrolitici compositi a matrice di nichel, a elevata concentrazione di particelli incorporate di SiC

    Energy Technology Data Exchange (ETDEWEB)

    Psarrou, S.; Spyrellis, N. [National Technical University of Athens (Greece)

    1999-08-01

    This paper gives the results of the study on the preparation of nickel matrix composite electro coatings, containing incorporate silicon carbide (SiC) microparticles under either direct current (D.C.) or pulse current (P.C.) conditions. It is proved that the applicability of pulse plating techniques modifies significantly the control of metal electro crystallization procedure. Under specific preparation conditions, the application of pulse current results to Ni/SiC composite coatings with better surface morphology, higher incorporation percentages and more uniform distribution of the insert SiC microparticles in the metallic matrix than the direct current technique. Pulse electrolysis is thus a powerful mean of perturbing the absorption-desorption phenomena occurring at the nickel/electrolyte interface and hence influences the incorporation procedure to a significant grade. [Italian] Questo articolo fornisce i risultati di uno studio condotto sulla preparazione di elettrodepositi compositi a matrice di nichel per incorporazione di microparticelle di carburo di silicio (SiC), ottenuti sia in condizione di corrente diretta (C.D.) sia di corrente a impulsi (C.P.). E' ormai appurato che l'applicazione della tecnica ad impulsi modifica in modo rilevante il controllo della fase di elettrocristallizazione del metallo. La corrente ad impulsi, in particolare e specifiche condizioni operative, porta all'ottenimento di rivestimenti compositi Ni/SiC con migliorata morfologia superficiale, inoltre la percentuale di particelle incorporate e' piu' elevata e la distribuzione di micro particelle inerti di SiC nella matrice metallica e' piu' uniforme rispetto ai codepositi ottenuti con la tecnica a corrente diretta. L'elettrolisi a impulsi e' quindi uno strumento efficace per perturbare i fenomeni di absorbimento-desorbimento che avvengono all'interfaccia nichel/elettrolita e influenza significativamente il meccanismo di

  2. SiC Multi-Chip Power Modules as Power-System Building Blocks

    Science.gov (United States)

    Lostetter, Alexander; Franks, Steven

    2007-01-01

    The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost

  3. TiC/Ti3SiC2复合材料的制备及其性能研究%Preparation and properties of TiC/Ti3SiC2 composites

    Institute of Scientific and Technical Information of China (English)

    贾换; 尹洪峰; 袁蝴蝶; 杨祎诺

    2012-01-01

    以粉末Ti,Si,TiC和炭黑为原料,采用反应热压烧结法制备TiC/Ti3SiC2复合材料.借助XRD和SEM研究TiC含量对TiC/Ti3SiC2复合材料相组成、显微结构及力学特性的影响.结果表明:通过热压烧结可以得到致密度较高的TiC/Ti3SiC2复合材料;引入TiC可以促进Ti3SiC2的生成,当引入TiC的质量分数达30%,TiC/Ti3SiC2复合材料的弯曲强度和断裂韧性分别为406.9 MPa,3.7 MPa·m1/2;复合材料中Ti3SiC2相以穿晶断裂为主,TiC晶粒易产生拔出.%TiC/Ti3SiC2 composites were fabricated by reactive hot pressing sintering method using the mixture powder of Ti, Si, C and TiC as raw material. The effect of TiC content on phase composition, microstructure and mechanical properties of TiC/Ti3SiC2 composites was investigated by X-ray diffraction and scanning electron microscopy. The results demonstrate that dense TiC/ Ti3SiC2 composites can be obtained by hot pressing. The addition of TiC into composites can enhance the formation of TisSiC2. When the additional content of TiC reaches 30% (mass fraction) , the flexural strength and fracture toughness of TiC/Ti3SiC2 composite are 406.9 MPa and 3.7 MPa·m-2, respectively. Ti3SiC2 phase displays intergranular fracture and TiC grain pulls out from Ti3SiC2 matrix when TiC/Ti3SiC2 composite fractures.

  4. Interstellar SiC: Extended Studies of C, N, and SI Isotopes in Small Single Grains

    Science.gov (United States)

    Hoppe, P.; Strebel, R.; Eberhardt, P.; Amari, S.; Lewis, R. S.

    1993-07-01

    In search of grain-size dependent characteristics of interstellar SiC, we have measured the C, N, and Si isotopes in 596 single grains from Murchison separate KJE (average size 1.14 micrometers) [1]. So far, extended studies of single SiC grains from the Murchison K-series were made on separates KJG (average size 3.02 micrometers) and KJH (average size 4.57 micrometers) [2] and a limited dataset was also obtained for separate KJF (average size 1.86 micrometers) [2,3]. As it is the case for the larger grains, most grains from KJE have heavy carbon and light nitrogen. ^12C/^13C ratios vary between 2.3 and 270. The distribution of ^12C/^13C ratios is almost identical to those observed for the larger-grain separates, with most grains having ^12C/^13C ~40-100 (Fig. 1a-c). ^14N/^15N ratios vary between 48 and >10,000. The distribution of ^14N/^15N ratios clearly differs from those observed for the larger-grain separates (Fig. 1d-f). Grains from separate KJE, on the average, have much higher ^14N/^15N ratios. The median value is 2800 compared to 1250 for KJG and 550 for KJH [2]. As is evident from these numbers, there is a clear trend with the typical ^14N/^15N ratio increasing with decreasing grain size. In close agreement with the larger grains, most grains from KJE have delta^29Si ~ -50 to 200 per mil and delta^30Si ~ 0 to 160 per mil, in a three-isotope-plot lying along a line with slope ~1.1. However, there are 12 grains clearly off this line with 10 of them being depleted in ^29Si and enriched in ^30Si. Nine grains were identified as grains X [4], being charaterized by light C, heavy N, and light Si. Five of them, in addition, show a very high nitrogen content, ~5x higher than that of a typical grain from KJE. Furthermore, one grain has the Si-isotopic signature of grains X, but heavy C. While the observed C-isotopic ratios for the majority of the grains can be explained by standard stellar evolution models for AGB-stars [5], the ^14N/^15N ratios > ~2000, as it is

  5. Effect of SiC and GR Reinforcement Particles on the Structure and Functional Properties of Composite Casting E43 MMC Reinforced with SiC Particles

    Directory of Open Access Journals (Sweden)

    Boczkal S.

    2016-03-01

    Full Text Available The aim of the study was to describe the structure of composites based on the AlSi7Mg2Sr0.03 alloy matrix reinforced with SiC particles added in an amount of 10% and with a mixture of SiC and GR particles added in a total amount of 20%. Studies of the composite structure, were carried out by scanning electron microscopy (SEM. Based on the results of chemical analysis in microregions, an increased content of elements such as Mg, O and Si and of the precipitates was observed at the interface. In many places in the examined sample, GR particles formed partly disintegrated conglomerates with well developed boundaries. The effect of the content of particles of the reinforcing phase on the functional properties of the composite was investigated during studies of abrasion. The lowest mass loss of 5,33mg was obtained for the AlSi7Mg2Sr0.03 alloy reinforced with 10% SiC particles.

  6. Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC

    Directory of Open Access Journals (Sweden)

    Chariya Virojanadara

    2013-01-01

    Full Text Available Graphene grown on C-face SiC substrates using two procedures, high and low growth temperature and different ambients, was investigated using Low Energy Electron Microscopy (LEEM, X-ray Photo Electron Electron Microscopy (XPEEM, selected area Low Energy Electron Diffraction (μ-LEED and selected area Photo Electron Spectroscopy (μ-PES. Both types of samples showed formation of μm-sized grains of graphene. The sharp (1 × 1 μ-LEED pattern and six Dirac cones observed in constant energy photoelectron angular distribution patterns from a grain showed that adjacent layers are not rotated relative to each other, but that adjacent grains in general have different azimuthal orientations. Diffraction spots from the SiC substrate appeared in μ-LEED patterns collected at higher energies, showing that the rotation angle between graphene and SiC varied. C 1s spectra collected did not show any hint of a carbon interface layer. A hydrogen treatment applied was found to have a detrimental effect on the graphene quality for both types of samples, since the graphene domain/grain size was drastically reduced. From hydrogen treated samples, μ-LEED showed at first a clear (1 × 1 pattern, but within minutes, a pattern containing strong superstructure spots, indicating the presence of twisted graphene layers. The LEED electron beam was found to induce local desorption of hydrogen. Heating a hydrogenated C-face graphene sample did not restore the quality of the original as-grown sample.

  7. Superior oblique surgery: when and how?

    Directory of Open Access Journals (Sweden)

    Taylan Şekeroğlu H

    2013-08-01

    Full Text Available Hande Taylan Şekeroğlu,1 Ali Sefik Sanac,1 Umut Arslan,2 Emin Cumhur Sener11Department of Ophthalmology, 2Department of Biostatistics, Hacettepe University Faculty of Medicine, Ankara, TurkeyBackground: The purpose of this paper is to review different types of superior oblique muscle surgeries, to describe the main areas in clinical practice where superior oblique surgery is required or preferred, and to discuss the preferred types of superior oblique surgery with respect to their clinical outcomes.Methods: A consecutive nonrandomized retrospective series of patients who had undergone superior oblique muscle surgery as a single procedure were enrolled in the study. The diagnosis, clinical features, preoperative and postoperative vertical deviations in primary position, type of surgery, complications, and clinical outcomes were reviewed. The primary outcome measures were the type of strabismus and the type of superior oblique muscle surgery. The secondary outcome measure was the results of the surgeries.Results: The review identified 40 (20 male, 20 female patients with a median age of 6 (2–45 years. Nineteen patients (47.5% had Brown syndrome, eleven (27.5% had fourth nerve palsy, and ten (25.0% had horizontal deviations with A pattern. The most commonly performed surgery was superior oblique tenotomy in 29 (72.5% patients followed by superior oblique tuck in eleven (27.5% patients. The amount of vertical deviation in the fourth nerve palsy and Brown syndrome groups (P = 0.01 for both and the amount of A pattern in the A pattern group were significantly reduced postoperatively (P = 0.02.Conclusion: Surgery for the superior oblique muscle requires experience and appropriate preoperative evaluation in view of its challenging nature. The main indications are Brown syndrome, fourth nerve palsy, and A pattern deviations. Superior oblique surgery may be effective in terms of pattern collapse and correction of vertical deviations in primary

  8. Orientational and directional selectivities of visual neurons in the superior colliculus of the cat

    Institute of Scientific and Technical Information of China (English)

    李兵; 王磊; 王毅; 刁云程

    1996-01-01

    Based on quantitative analyses of the response characteristics of visual neurons in the superior colliculus to moving optical bar stimuli, it is demonstrated for the first time that the visual neurons in superior colliculus of the cat have, to some extent, orientational selectivity. The significance of this selectivity is discussed in reference to its morphological substrate and physiological functions. In addition, both the directional and orientational selectivities in the superior colliculus are relatively weak when compared with those in the primary visual cortex, and the majority of the neurons prefer upward or downward motion in the visual field.

  9. Study on evaluation system of high & new technology superior enterprises

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    With the globalization of economy and science & technology, high & new technology enterprises have become the point of Chinese economic growth and the important basis for constructing innovative country. By analyzing the characteristics of high & new technology superior enterprises and the influential factors, the evaluation index and method based on Grey Relation Analysis are designed. Some high & new technology enterprises in Heilongjiang province are evaluated and application tactics of evaluation system are proposed. This study provides scientific method and basis for government to obtain development state about high & new technology enterprises and design planning and policies of high & new technology industry.

  10. Water quality of streams tributary to Lakes Superior and Michigan

    Science.gov (United States)

    Zimmerman, Jerome W.

    1968-01-01

    Water quality of streams tributary to Lakes Superior and Michigan was analyzed for 142 stations on 99 streams tributary to Lake Superior and 83 stations on 56 streams tributary to Lake Michigan during 1962-65. Concentrations of aluminum, copper, and iron were not affected greatly by flow or season. Magnesium, calcium, chlorides, total alkalinity, total hardness, and conductivity varied with the flow, temperature, and season; the lowest values were during the spring runoff and heavy rains, and the highest were during low water in late summer and the colder periods of winter. Concentrations of nitrate, silica, and sulfates were lowest in the spring and summer. Concentrations of tanninlike and ligninlike compounds were highest during the spring runoff and other high-water periods, and were lowest during freezeup when surface runoff was minimal. The pH values were highest from June to September and lowest during the spring runoff. Phenolphthalein alkalinity was detected primarily in the summer and coincided occasionally with low flows just before the spring thaw. Total hardness usually was lower in streams tributary to Lake Superior than in streams tributary to Lake Michigan. The total hardness was higher in the streams in Wisconsin than in the streams in Michigan along the west shore of Lake Michigan. It was lowest in the northernmost streams. The water quality of the streams in an area was related to the geological characteristics of the land.

  11. Reliability Assessment of SiC Power MOSFETs From The End User's Perspective

    DEFF Research Database (Denmark)

    Karaventzas, Vasilios Dimitris; Nawaz, Muhammad; Iannuzzo, Francesco

    2016-01-01

    The reliability of commercial Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, and comparative assessment is performed under various test environments. The MOSFETs are tested both regarding the electrical properties of the dies and the packaging...

  12. Photoluminescence topography of fluorescent SiC and its corresponding source crystals

    DEFF Research Database (Denmark)

    Wilhelm, M.; Kaiser, M.; Jokubavicus, V.

    2013-01-01

    The preparation and application of co-doped polycrystalline SiC as source in sublimation growth of fluorescent layers is a complex topic. Photoluminescence topographies of luminescent 6H-SiC layers and their corresponding source crystals have been studied in order to investigate the dependence...

  13. Localized Surface Plasmon on 6H SiC with Ag Nanoparticles

    DEFF Research Database (Denmark)

    Wei, Yi; Fadil, Ahmed; Ou, Haiyan

    2017-01-01

    ) of the emissions of the donor-acceptor pairs of the SiC substrate. Roomtemperature measurements of photoluminescence (PL), transmittance and time-resolved photoluminescence (TRPL) were applied to characterize the LSP resonances. Through the finitedifference time-domain (FDTD) simulation of the LSP resonance...

  14. Synthesis and characterization of AA 6061- Graphene - SiC hybrid nanocomposites processed through microwave sintering

    Science.gov (United States)

    Jauhari, Siddhartha; Prashantha Kumar, H. G.; Xavior, . M. Anthony

    2016-09-01

    As one of the most essential industrial and engineering materials, Aluminum alloy 6061 have been extensively used in automobile industries and many engineering applications due to its impending properties like low density, good structural rigidity, feasibility to incorporate and enhance the strength by addition of various reinforcing materials. The essential criteria in enhancing the properties without sacrificing the ductility is always challenging in Aluminum and its alloys based composites. In the recent years, enormous research has been carried on ceramic based and carbon based reinforcement materials used in Aluminum metal matrix composites. But the combination of both is never tried so far due to lack of processing methods. The current research work is carried out to process, synthesize and perform the characterization of Al 6061 matrix nanocomposites with Graphene of flake size 10 μm and SiC of particle size 10 pm as reinforcement combinations in various proportions (weight percentage) which are carried out through powder metallurgy (PM) approach. The powders are processed through ultrasonic liquid processing method and the mixtures were ball milled by adding SiC particles followed by uniaxial hot compaction. Thus prepared compacts are sintered (conventional and microwave) and mechanical properties like hardness, density are investigated as a function of Graphene and SiC concentrations (weight fraction). Relevant strengthening mechanism involved in the Al6061 - Graphene -SiC composites in comparison with monolithic Al 6061 alloy were discussed.

  15. Study on porosity of ceramic SiC using small angle neutron scattering

    Institute of Scientific and Technical Information of China (English)

    李际周; Y.Ito

    1996-01-01

    The mechanical properties of functional heat-resistant ceramics SiC are significantly influenced by the concentration and idmensions of pores.Small angle neutron scattering measurements for 3 SiC samples with different densities are performed on C1-2 SANS instrument of the University of Tokyo.Two groups of the neutron data are obtained using 8 and 16m of secondary flight path,1 and 0.7 nm of neutron wave lengths,respectively,After deduction of background measurement and transmission correction,both neutron data are linked up with each other,The patterns of neutron data of 3 samples with Q range from 0.028-0.5nm-1 are almost with axial symmetry,showing that the shape of pores is almost spherical.Using Mellin transform,size distributions of pores in 3 samples are obtained.The average size (-19nm)of pores for hot-pressed SiC sample with higher density is smaller than the others (-21nm).It seems to be the reason why the density of hot-pressed SiC sample is higher than not hot-pressed sample.

  16. Conformal Thin Film Packaging for SiC Sensor Circuits in Harsh Environments

    Science.gov (United States)

    Scardelletti, Maximilian C.; Karnick, David A.; Ponchak, George E.; Zorman, Christian A.

    2011-01-01

    In this investigation sputtered silicon carbide annealed at 300 C for one hour is used as a conformal thin film package. A RF magnetron sputterer was used to deposit 500 nm silicon carbide films on gold metal structures on alumina wafers. To determine the reliability and resistance to immersion in harsh environments, samples were submerged in gold etchant for 24 hours, in BOE for 24 hours, and in an O2 plasma etch for one hour. The adhesion strength of the thin film was measured by a pull test before and after the chemical immersion, which indicated that the film has an adhesion strength better than 10(exp 8) N/m2; this is similar to the adhesion of the gold layer to the alumina wafer. MIM capacitors are used to determine the dielectric constant, which is dependent on the SiC anneal temperature. Finally, to demonstrate that the SiC, conformal, thin film may be used to package RF circuits and sensors, an LC resonator circuit was fabricated and tested with and without the conformal SiC thin film packaging. The results indicate that the SiC coating adds no appreciable degradation to the circuits RF performance. Index Terms Sputter, silicon carbide, MIM capacitors, LC resonators, gold etchants, BOE, O2 plasma

  17. SiC lightweight telescopes for advanced space applications. II - Structures technology

    Science.gov (United States)

    Anapol, Michael I.; Hadfield, Peter; Tucker, Theodore

    1992-01-01

    A critical technology area for lightweight SiC-based telescope systems is the structural integrity and thermal stability over spaceborne environmental launch and thermal operating conditions. Note, it is highly desirable to have an inherently athermal design of both SiC mirrors and structure. SSG has developed an 8 inch diameter SiC telescope system for brassboard level optical and thermal testing. The brassboard telescope has demonstrated less than 0.2 waves P-V in the visible wavefront change over +50 C to -200 C temperature range. SSG has also fabricated a SiC truss structural assembly and successfully qualified this hardware at environmental levels greater than 3 times higher than normal Delta, Titan, and ARIES launch loads. SSG is currently developing two SiC telescopes; an 20 cm diameter off-axis 3 mirror re-imaging and a 60 cm aperture on-axis 3 mirror re-imager. Both hardware developments will be tested to flight level environmental, optical, and thermal specifications.

  18. Selected mechanical properties of aluminum composite materials reinforced with SiC particles

    Directory of Open Access Journals (Sweden)

    A. Kurzawa

    2008-07-01

    Full Text Available This work presents the results of research concerning influence of ceramic particles’ content of silicon carbide on selected mechanical properties of type AW-AlCu4Mg2Mn - SiC composite materials. Composites produced of SiC particles with pressure infiltration method of porous preform and subject to hot plastic forming in the form of open die forging were investigated. The experimental samples contained from 5% up to 45% of reinforcing SiC particles of 8÷10μm diameter. Studies of strength properties demonstrated that the best results, in case of tensile strength as well as offset yield strength, might be obtained while applying reinforcement in the amount of 20-25% vol. of SiC. Application of higher than 25% vol. contents of reinforcing particles leads to gradual strength loss. The investigated composites were characterized by very high functional properties, such as hardness and abrasive wear resistance, whose values increase strongly with the increase of reinforcement amount. The presented results of the experiments shall allow for a more precise component selection of composite materials at the stage of planning and design of their properties.

  19. Mission-profile-based stress analysis of bond-wires in SiC power modules

    DEFF Research Database (Denmark)

    Bahman, Amir Sajjad; Iannuzzo, Francesco; Blaabjerg, Frede

    2016-01-01

    This paper proposes a novel mission-profile-based reliability analysis approach for stress on bond wires in Silicon Carbide (SiC) MOSFET power modules using statistics and thermo-mechanical FEM analysis. In the proposed approach, both the operational and environmental thermal stresses are taken i...

  20. Photoelectrochemistry and Etching of SiC: a Comparison with Si

    NARCIS (Netherlands)

    Kelly, J.J.; van Dorp, D.H.; Weyher, J.L.

    2007-01-01

    The anodic electrochemistry and etching of the group IV compound semiconductor SiC was studied in both KOH and acidic fluoride solutions. The results for p-type and n-type electrodes are compared with those obtained for the group IV elemental semiconductor Si. We point out a number of interesting ap

  1. Thermal annealing of SiC thin films with varying stoichiometry

    Energy Technology Data Exchange (ETDEWEB)

    Kuenle, Matthias [Fraunhofer Institute for Solar Energy Systems, Heidenhofstrasse 2, 79110 Freiburg (Germany)], E-mail: matthias.kuenle@ise.fraunhofer.de; Janz, Stefan [Fraunhofer Institute for Solar Energy Systems, Heidenhofstrasse 2, 79110 Freiburg (Germany); Eibl, Oliver [Eberhard-Karls-Universitaet, Tuebingen, Institute for Applied Physics, Auf der Morgenstelle 10, 72076 Tuebingen (Germany); Berthold, Christoph; Presser, Volker; Nickel, Klaus-Georg [Eberhard-Karls-Universitaet, Tuebingen, Institute for Geoscience, Applied Mineralogy, Wilhelmstrasse 56, 72074 Tuebingen (Germany)

    2009-03-15

    Thin films of amorphous hydrogenated silicon carbide (a-SiC:H) with varying stoichiometry of silicon and carbon were prepared by Plasma Enhanced Chemical Vapour Deposition (PECVD). After deposition a subsequent rapid thermal annealing was carried out at 900, 1100 and 1300 deg. C. The as-deposited and annealed SiC thin films were investigated by X-ray diffraction (XRD), cross-section and plane view transmission electron microscopy (TEM), Fourier-Transformed Infrared (FTIR) and Raman spectroscopy. The deposited films were amorphous directly after deposition and became nanocrystalline after annealing at 1300 deg. C. This was verified by XRD measurements. Microvoids were found in all films investigated by TEM. Densification and crystallisation as well as cooling introduced tensile stresses within the annealed SiC film and lead eventually to crack formation in the film. The annealed stoichiometric SiC film shows v-shaped extended defects at the Si-SiC interface likely formed during the annealing at high temperatures. FTIR and Raman spectroscopy showed a strong influence of initial film properties such as hydrogen content and binding structure on the internal structure of the SiC thin films after annealing.

  2. Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) power supply for the Power Processing Unit (PPU) of...

  3. An Investigation of Abrasive Wear Behaviour of Al 2014-SiC Composites

    Science.gov (United States)

    Çalin, Recep; Cilasun, Niyazi Selçuk

    2015-04-01

    In this study, the effects of SiC reinforcement volume fractions on hardness, porosity and abrasive wear behaviour were examined in Al 2014-SiC (composites (MMCs) of 3%, 6% and 12% reinforcement-volume (R-V) ratios produced by melt-stirring. Abrasive wear tests were carried out by 320 mesh Al2O3 abrasive paper and a pin-on-disc wear test apparatus, under 10N, 20N and 30N load, and at 0.2 ms-1 sliding speed. The same specimens were tested by 150, 240 and 320 mesh abrasive paper at 0.2 ms-1 sliding speed, under 10N, 20N and 30N load. After the tests, the microstructures of the worn surfaces were examined with scanning electron microscope (SEM) studies and EDS analyses. Besides, the amount of hardness and porosity of the specimens were identified. It was recorded that the amounts of hardness and porosity increases as the SiC reinforcement in the composite increases. The highest amount of abrasive wear was recorded in the specimens with 3% reinforcements. It was identified that the amount of abrasive wear decreases while the SiC reinforcement in the composite structure increases by volume, and that the amount of porosity and reinforcement volume (R-V) ratio are important parameters in abrasive wear.

  4. Molecular Dynamics Simulations of Atomic H Etching SiC Surface

    NARCIS (Netherlands)

    Sun, W.; Liu, H.; Lin, L.; Zhao, C. L.; Lu, X. D.; He, P. N.; Gou, F.

    2012-01-01

    In this paper, molecular dynamics simulations were performed to study interactions between atomic H and SiC, silicon carbon surfaces were continuously bombarded by atomic H with different energies. The Tersoff-Brenner potentials were implemented. The simulation results show that with increasing

  5. Laser surface alloying of aluminum (AA1200) with Ni and SiC Powders

    CSIR Research Space (South Africa)

    Mabhali, Luyolo AB

    2010-12-01

    Full Text Available An Nd:YAG laser was used for surface alloying of aluminum AA1200. The alloying powder was a mixture of Ni and SiC in different ratios. A study of the microstructures obtained after alloying was conducted using optical and scanning electron...

  6. Laser alloying of Al with mixed Ni, Ti and SiC powders

    CSIR Research Space (South Africa)

    Mabhali, Luyolo AB

    2010-11-01

    Full Text Available Laser alloying of aluminium AA1200 was performed with a 4.4kW Rofin Sinar Nd:YAG laser to improve the surface hardness. Alloying was carried out by depositing Ni, Ti and SiC powders of different weight ratios on the aluminium substrate. The aim...

  7. Laser alloying of AI with mixed Ni, Ti and SiC powders

    CSIR Research Space (South Africa)

    Mabhali, Luyolo AB

    2010-03-01

    Full Text Available Laser alloying of aluminium AA1200 was performed with a 4.4kW Rofin Sinar Nd:YAG laser to improve the surface hardness. Alloying was carried out by depositing Ni, Ti and SiC powders of different weight ratios on the aluminum substrate. The aim...

  8. Analysis of the residual stress in Al2O3-SiC nanocomposites

    Institute of Scientific and Technical Information of China (English)

    王宏志; 高濂; 郭景坤

    1999-01-01

    The residual stress in Al2O3-SiC nanocomposites was measured by the X-ray diffraction method. A mode was established to calculate the residual stress, which accorded with the results measured by the XRD method. The strengthening and toughening mechanism was also discussed.

  9. Omnidirectional luminescence enhancement of fluorescent SiC via pseudoperiodic antireflective subwavelength structures

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicius, Valdas; Yakimova, Rositza;

    2012-01-01

    In the present work, an approach of fabricating pseudoperiodic antireflective subwavelength structures (ARS) on fluorescent SiC by using self-assembled etch mask is demonstrated. By applying the pseudoperiodic (ARS), the average surface reflectance at 6° incidence over the spectral range of 390-7...

  10. Antireflective SiC Surface Fabricated by Scalable Self-Assembled Nanopatterning

    DEFF Research Database (Denmark)

    Ou, Yiyu; Fadil, Ahmed; Ou, Haiyan

    2016-01-01

    An approach for fabricating sub-wavelength antireflective structures on SiC material is demonstrated. A time-efficient scalable nanopatterning method by rapid thermal annealing of thin metal film is applied followed by a dry etching process. Size-dependent optical properties of the antireflective...

  11. CO oxidation catalyzed by silicon carbide (SiC) monolayer: A theoretical study.

    Science.gov (United States)

    Wang, Nan; Tian, Yu; Zhao, Jingxiang; Jin, Peng

    2016-05-01

    Developing metal-free catalysts for CO oxidation has been a key scientific issue in solving the growing environmental problems caused by CO emission. In this work, the potential of the silicon carbide (SiC) monolayer as a metal-free catalyst for CO oxidation was systematically explored by means of density functional theory (DFT) computations. Our results revealed that CO oxidation reaction can easily proceed on SiC nanosheet, and a three-step mechanism was proposed: (1) the coadsorption of CO and O2 molecules, followed by (2) the formation of the first CO2 molecule, and (3) the recovery of catalyst by a second CO molecule. The last step is the rate-determining one of the whole catalytic reaction with the highest barrier of 0.65eV. Remarkably, larger curvature is found to have a negative effect on the catalytic performance of SiC nanosheet for CO oxidation. Therefore, our results suggested that flat SiC monolayer is a promising metal-free catalyst for CO oxidation.

  12. Switching Investigations on a SiC MOSFET in a TO-247 Package

    DEFF Research Database (Denmark)

    Anthon, Alexander; Hernandez Botella, Juan Carlos; Zhang, Zhe;

    2014-01-01

    package, has a major influence on the switching energy. Crucial design guidelines for an improved double pulse test circuit are introduced which are used for practical investigations on the switching behavior. Switching energies of a SiC MOSFET in a TO-247 package is measured depending on varying gate...

  13. Residual stress measurements in an SiC continuous fiber reinforced Ti matrix composite

    NARCIS (Netherlands)

    Willemse, P.F.; Mulder, F.M.; Wei, W.; Rekveldt, M.Th.; Knight, K.S.

    2000-01-01

    During the fabrication of ceramic fiber reinforced metal matrix composites mismatch stresses will be introduced due to differences in thermal expansion coefficients between the matrix and the fibers. Calculations, based on a coaxial cylinder model, [1 and 2] predict that, for a Ti matrix SiC

  14. Temperature dependence of a microstructured SiC coherent thermal source

    Science.gov (United States)

    Hervé, Armande; Drévillon, Jérémie; Ezzahri, Younès; Joulain, Karl; De Sousa Meneses, Domingos; Hugonin, Jean-Paul

    2016-09-01

    By ruling a grating on a polar material that supports surface phonon-polaritons such as silicon carbide (SiC), it is possible to create directional and monochromatic thermal sources. So far, most of the studies have considered only materials with room temperature properties as the ones tabulated in Palik's handbooks. Recently, measurements have provided experimental data of the SiC dielectric function at different temperatures. Here we study, numerically, the effect of the temperature dependence of the dielectric function on the thermal emission of SiC gratings (1D grating, in a first approach), heated at different temperatures. When materials are heated, the position of the grating emissivity peak shifts towards higher wavelength values. A second consequence of the temperature dependence of optical properties is that room temperature designed gratings are not optimal for higher temperatures. However, by modifying the grating parameters, it is possible to find an emission peak, with a maximum of emissivity near 1, for each temperature. We tried first to catch some patterns in the emissivity variation. Then, we obtained a grating, which leads to an optimum emissivity for all available temperature data for SiC.

  15. pH sensitivity of Si-C linked organic monolayers on crystalline silicon surfaces

    NARCIS (Netherlands)

    Faber, Erik Jouwert; Sparreboom, Wouter; Groeneveld, Wilrike; de Smet, Louis C.P.M.; Bomer, Johan G.; Olthuis, Wouter; Zuilhof, Han; Sudholter, Ernst; Sudhölter, Ernst J.R.; Bergveld, Piet; van den Berg, Albert

    2007-01-01

    The electrochemical behaviour of Si-C linked organic monolayers is studied in electrolyte-insulator-Si devices, under conditions normally encountered in potentiomeric biosensors, to gain fundamental knowledge on the behaviour of such Si electrodes under practical conditions. This is done via

  16. 40 CFR 372.23 - SIC and NAICS codes to which this Part applies.

    Science.gov (United States)

    2010-07-01

    ... dresses or gowns, or women's, misses' and girls' dresses cut and sewn from purchased fabric (except... Except facilities primarily engaged in Music copyright authorizing use, Music copyright buying and licensing, and Music publishers working on their own account (previously classified under SIC 8999,...

  17. Few layer graphene synthesis via SiC decomposition at low temperature and low vacuum

    Science.gov (United States)

    Kayali, Emre; Mercan, Elif; Emre Oren, Ersin; Cambaz Buke, Goknur

    2016-04-01

    Based on the large-scale availability and good electrical properties, the epitaxial graphene (EG) on SiC exhibits a big potential for future electronic devices. However, it is still necessary to work continuously on lowering the formation temperature and vacuum values of EG while improving the quality and increasing the lateral size to fabricate high-performance electronic devices at reduced processing costs. In this study, we investigated the effect of the presence of Mo plate and hydrogen atmosphere as well as the vacuum annealing durations on SiC decomposition. Our studies showed that the graphene layers can be produced at lower annealing temperatures (1200 °C) and vacuum values (10-4 Torr) in the presence of Mo plate and hydrogen. For high quality continuous graphene formation, Mo plate should be in contact with SiC. If there is a gap between Mo and SiC, non-wetting oxide droplets on few layer graphene (FLG) are recorded. Moreover, it is found that the morphology of these islands can be controlled by changing the annealing time and atmosphere conditions, and applying external disturbances such as vibration.

  18. SiC MODIFICATIONS TO MELCOR FOR SEVERE ACCIDENT ANALYSIS APPLICATIONS

    Energy Technology Data Exchange (ETDEWEB)

    Brad J. Merrill; Shannon M Bragg-Sitton

    2013-09-01

    The Department of Energy (DOE) Office of Nuclear Energy (NE) Light Water Reactor (LWR) Sustainability Program encompasses strategic research focused on improving reactor core economics and safety margins through the development of an advanced fuel cladding system. The Fuels Pathway within this program focuses on fuel system components outside of the fuel pellet, allowing for alteration of the existing zirconium-based clad system through coatings, addition of ceramic sleeves, or complete replacement (e.g. fully ceramic cladding). The DOE-NE Fuel Cycle Research & Development (FCRD) Advanced Fuels Campaign (AFC) is also conducting research on materials for advanced, accident tolerant fuels and cladding for application in operating LWRs. To aide in this assessment, a silicon carbide (SiC) version of the MELCOR code was developed by substituting SiC in place of Zircaloy in MELCOR’s reactor core oxidation and material property routines. The purpose of this development effort is to provide a numerical capability for estimating the safety advantages of replacing Zr-alloy components in LWRs with SiC components. This modified version of the MELCOR code was applied to the Three Mile Island (TMI-2) plant accident. While the results are considered preliminary, SiC cladding showed a dramatic safety advantage over Zircaloy cladding during this accident.

  19. The SIC Are Dying: New Federal Industry Code on the Way.

    Science.gov (United States)

    Quint, Barbara

    1996-01-01

    Standard Industrial Classification (SIC) codes have structured most federal and many private collections of industry statistics. This article introduces the new industry classification hierarchy called the North American Industry Classification System (NAICS) and its effects on searchers. A sidebar includes sources of information on the new code.…

  20. Modeling and Testing Miniature Torsion Specimens for SiC Joining Development Studies for Fusion

    Energy Technology Data Exchange (ETDEWEB)

    Henager, Charles H.; Nguyen, Ba Nghiep; Kurtz, Richard J.; Roosendaal, Timothy J.; Borlaug, Brennan A.; Ferraris, Monica; Ventrella, Andrea; Katoh, Yutai

    2015-08-19

    The international fusion community has designed a miniature torsion specimen for neutron irradiation studies of joined SiC and SiC/SiC composite materials. Miniature torsion joints based on this specimen design were fabricated using displacement reactions between Si and TiC to produce Ti3SiC2 + SiC joints with CVD-SiC and tested in torsion-shear prior to and after neutron irradiation. However, many of these miniature torsion specimens fail out-of-plane within the CVD-SiC specimen body, which makes it problematic to assign a shear strength value to the joints and makes it difficult to compare unirradiated and irradiated joint strengths to determine the effects of the irradiation. Finite element elastic damage and elastic-plastic damage models of miniature torsion joints are developed that indicate shear fracture is likely to occur within the body of the joined sample and cause out-of-plane failures for miniature torsion specimens when a certain modulus and strength ratio between the joint material and the joined material exists. The model results are compared and discussed with regard to unirradiated and irradiated joint test data for a variety of joint materials. The unirradiated data includes Ti3SiC2 + SiC/CVD-SiC joints with tailored joint moduli, and includes steel/epoxy and CVD-SiC/epoxy joints. The implications for joint data based on this sample design are discussed.

  1. The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer.

    Energy Technology Data Exchange (ETDEWEB)

    Isabella J van Rooyen; Philippus M van Rooyen; Mary Lou Dunzik-Gougar

    2013-08-01

    The unique combination of thermo-mechanical and physiochemical properties of silicon carbide (SiC) provides interest and opportunity for its use in nuclear applications. One of the applications of SiC is as a very thin layer in the TRi-ISOtropic (TRISO) coated fuel particles for high temperature gas reactors (HTGRs). This SiC layer, produced by chemical vapor deposition (CVD), is designed to withstand the pressures of fission and transmutation product gases in a high temperature, radiation environment. Various researchers have demonstrated that macroscopic properties can be affected by changes in the distribution of grain boundary plane orientations and misorientations [1 - 3]. Additionally, various researchers have attributed the release behavior of Ag through the SiC layer as a grain boundary diffusion phenomenon [4 - 6]; further highlighting the importance of understanding the actual grain characteristics of the SiC layer. Both historic HTGR fission product release studies and recent experiments at Idaho National Laboratory (INL) [7] have shown that the release of Ag-110m is strongly temperature dependent. Although the maximum normal operating fuel temperature of a HTGR design is in the range of 1000-1250°C, the temperature may reach 1600°C under postulated accident conditions. The aim of this specific study is therefore to determine the magnitude of temperature dependence on SiC grain characteristics, expanding upon initial studies by Van Rooyen et al, [8; 9].

  2. Whisker-related afferents in superior colliculus.

    Science.gov (United States)

    Castro-Alamancos, Manuel A; Favero, Morgana

    2016-05-01

    Rodents use their whiskers to explore the environment, and the superior colliculus is part of the neural circuits that process this sensorimotor information. Cells in the intermediate layers of the superior colliculus integrate trigeminotectal afferents from trigeminal complex and corticotectal afferents from barrel cortex. Using histological methods in mice, we found that trigeminotectal and corticotectal synapses overlap somewhat as they innervate the lower and upper portions of the intermediate granular layer, respectively. Using electrophysiological recordings and optogenetics in anesthetized mice in vivo, we showed that, similar to rats, whisker deflections produce two successive responses that are driven by trigeminotectal and corticotectal afferents. We then employed in vivo and slice experiments to characterize the response properties of these afferents. In vivo, corticotectal responses triggered by electrical stimulation of the barrel cortex evoke activity in the superior colliculus that increases with stimulus intensity and depresses with increasing frequency. In slices from adult mice, optogenetic activation of channelrhodopsin-expressing trigeminotectal and corticotectal fibers revealed that cells in the intermediate layers receive more efficacious trigeminotectal, than corticotectal, synaptic inputs. Moreover, the efficacy of trigeminotectal inputs depresses more strongly with increasing frequency than that of corticotectal inputs. The intermediate layers of superior colliculus appear to be tuned to process strong but infrequent trigeminal inputs and weak but more persistent cortical inputs, which explains features of sensory responsiveness, such as the robust rapid sensory adaptation of whisker responses in the superior colliculus. Copyright © 2016 the American Physiological Society.

  3. Investigation of the novel 4Hsbnd SiC trench MOSFET with non-uniform doping floating islands

    Science.gov (United States)

    Song, Qingwen; Tang, Xiaoyan; Tian, Ruiyan; Zhang, Yimeng; Guo, Tao; Tang, Guannan; Yang, Shuai; Yuan, Hao; He, Yanjing

    2016-11-01

    In this paper, a novel 4Hsbnd SiC trench metal-oxide-semiconductor field-effect transistor (MOSFET) with non-uniform doping floating islands is proposed, using a Gaussian doping profile in the floating islands. The feature of the non-uniform doping floating island is that the doping concentration of upper part is higher than the lower part. The electric field between the floating island and drift region can be reduced by the decrease in the doping concentration of the lower part. At the same time, the high doping concentration for the upper part of the floating island is utilized, so that gate oxide layer at the sharp corner of the trench gate bottom cannot be broken down in advance. The simulation results indicate that the breakdown voltage of the novel structure can increase by 48%, compared with the structure with the uniform doping (6 × 1017 cm-3) floating island. Furthermore, the switching and gate charge characteristics of the UMOSFETs with uniform and Gaussian doping floating islands have been simulated using two simple switching circuits. The results indicate that changing the doping concentration of the floating islands has no negative effect on the switching characteristics.

  4. Fabrication and characterization of Ti3SiC2–SiC nanocomposite by in situ reaction synthesis of TiC/Si/Al powders

    Indian Academy of Sciences (India)

    Baoyan Liang; Mingzhi Wang; Xiaopu Li; Yunchao Mu

    2011-12-01

    The microstructure and mechanical properties of Ti3SiC2–SiC nanocomposite fabricated by in situ hot pressing (HP) synthesis process were studied. The results show that dense Ti3SiC2–SiC composite contained minor TiSi2 obtained by hot sintering at 1350°C for 1 h. The average grain size of Ti3SiC2 was 4 m in length, and the size of SiC grains is about 100 nm. With its fine microstructure, the Ti3SiC2–SiC nanocomposite shows good mechanical properties.

  5. Electrical Discharge Machining of Al (6351-5% SiC-10% B4C Hybrid Composite: A Grey Relational Approach

    Directory of Open Access Journals (Sweden)

    S. Suresh Kumar

    2014-01-01

    Full Text Available The goal of the present experimental work is to optimize the electrical discharge machining (EDM parameters of aluminum alloy (Al 6351 matrix reinforced with 5 wt.% silicon carbide (SiC and 10 wt.% boron carbide (B4C particles fabricated through the stir casting route. Multiresponse optimization was carried out through grey relational analysis (GRA with an objective to minimize the machining characteristics, namely electrode wear ratio (EWR, surface roughness (SR and power consumption (PC. The optimal combination of input parameters is identified, which shows the significant enhancement in process characteristics. Contributions of each machining parameter to the responses are calculated using analysis of variance (ANOVA. The result shows that the pulse current contributes more (83.94% to affecting the combined output responses.

  6. Elaboration of silicon carbides nano particles (SiC): from the powder synthesis to the sintered ceramic; Elaboration de ceramiques nanostructurees en carbure de silicium (SiC): de la synthese de poudre a la ceramique frittee

    Energy Technology Data Exchange (ETDEWEB)

    Reau, A. [CEA Saclay, Dept. des Materiaux pour le Nucleaire (DEN/DANS/DMN/SRMA), 91 - Gif-sur-Yvette (France)

    2008-07-01

    Materials for the reactor cores of the fourth generation will need materials supporting high temperatures with fast neutrons flux. SiC{sub f}/SiC ceramics are proposed. One of the possible elaboration process is to fill SiC fiber piece with nano particles SiC powder and to strengthen by sintering. The aim of this thesis is to obtain a nano structured SiC ceramic as a reference for the SiC{sub f}/SiC composite development and to study the influence of the fabrication parameters. (A.L.B.)

  7. Epitaxial Growth of beta-Silicon Carbide (SiC) on a Compliant Substrate via Chemical Vapor Deposition (CVD)

    Science.gov (United States)

    Mitchell, Sharanda L.

    1996-01-01

    Many lattice defects have been attributed to the lattice mismatch and the difference in the thermal coefficient of expansion between SiC and silicon (Si). Stacking faults, twins and antiphase boundaries are some of the lattice defects found in these SiC films. These defects may be a partial cause of the disappointing performance reported for the prototype devices fabricated from beta-SiC films. The objective of this research is to relieve some of the thermal stress due to lattice mismatch when SiC is epitaxially grown on Si. The compliant substrate is a silicon membrane 2-4 microns thick. The CVD process includes the buffer layer which is grown at 1360 C followed by a very thin epitaxial growth of SiC. Then the temperature is raised to 1500 C for the subsequent growth of SiC. Since silicon melts at 1415 C, the SiC will be grown on molten Silicon which is absorbed by a porous graphite susceptor eliminating the SiC/Si interface. We suspect that this buffer layer will yield less stressed material to help in the epitaxial growth of SiC.

  8. Chemical reactivity of CVC and CVD SiC with UO{sub 2} at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Chinthaka M., E-mail: silvagw@ornl.gov [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Katoh, Yutai [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Voit, Stewart L. [Fusion and Materials for Nuclear Systems Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Snead, Lance L. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

    2015-05-15

    Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO{sub 2} pellets and evaluated for their potential chemical reaction with UO{sub 2}. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO{sub 2} was observed at comparatively low temperatures of 1100 and 1300 °C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity. However, both CVD and CVC SiCs showed some reaction with UO{sub 2} at a higher temperature (1500 °C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500 °C. Furthermore, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi{sub 2}, and U{sub 3}Si{sub 2} as a result of SiC reaction with UO{sub 2}.

  9. Fabrication and measurement of hoop strength of SiC triplex tube for nuclear fuel cladding applications

    Science.gov (United States)

    Kim, Daejong; Lee, Hyun-Geun; Park, Ji Yeon; Kim, Weon-Ju

    2015-03-01

    The SiC ceramics are under investigation for the fuel cladding in the light water nuclear reactors because of its excellent high temperature strength and corrosion resistance against hot steam under the severe accident conditions. In this study, the SiC triplex tubes consisting of a SiC inner layer, a SiC/PyC/SiC intermediate layer, and a SiC outer layer were fabricated by the chemical vapor processes. The hoop strength and fracture behaviors of the SiC triplex tube were investigated. The SiC triplex tubes fabricated at the high ratio of H2/MTS had a quite high average strength with a relatively small standard deviation. The hoop strength of the composite tubes tends to increase with the volume fraction of the reinforced fibers. The highest fiber volume fraction was obtained using Tyranno SA3-0.8k with the dense winding patterns such as bamboo-like mosaic pattern, which resulted in the high hoop strength compared to other fibers of Tyranno SA3-1.6k and Hi-Nicalon Type S. Hoop strength also increased slightly as the winding angle increased from 45° to 65°. Fracture behaviors of the SiC triplex tube were investigated via the observation of microstructure of the failed samples.

  10. TORC1 coordinates the conversion of Sic1 from a target to an inhibitor of cyclin-CDK-Cks1.

    Science.gov (United States)

    Moreno-Torres, Marta; Jaquenoud, Malika; Péli-Gulli, Marie-Pierre; Nicastro, Raffaele; De Virgilio, Claudio

    2017-01-01

    Eukaryotic cell cycle progression through G1-S is driven by hormonal and growth-related signals that are transmitted by the target of rapamycin complex 1 (TORC1) pathway. In yeast, inactivation of TORC1 restricts G1-S transition due to the rapid clearance of G1 cyclins (Cln) and the stabilization of the B-type cyclin (Clb) cyclin-dependent kinase (CDK) inhibitor Sic1. The latter mechanism remains mysterious but requires the phosphorylation of Sic1-Thr(173) by Mpk1 and inactivation of the Sic1-pThr(173)-targeting phosphatase (PP2A(Cdc55)) through greatwall kinase-activated endosulfines. Here we show that the Sic1-pThr(173) residue serves as a specific docking site for the CDK phospho-acceptor subunit Cks1 that sequesters, together with a C-terminal Clb5-binding motif in Sic1, Clb5-CDK-Cks1 complexes, thereby preventing them from flagging Sic1 for ubiquitin-dependent proteolysis. Interestingly, this functional switch of Sic1 from a target to an inhibitor of cyclin-CDK-Cks1 also operates in proliferating cells and is coordinated by the greatwall kinase, which responds to both Cln-CDK-dependent cell-cycle and TORC1-mediated nutritional cues.

  11. Preparation and characterization of the electrodeposited Cr-Al{sub 2}O{sub 3}/SiC composite coating

    Energy Technology Data Exchange (ETDEWEB)

    Gao Jifeng, E-mail: readlot@tom.com [State Key Laboratory of Mould Technology, Institute of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Suo Jinping, E-mail: jpsuo@yahoo.com.cn [State Key Laboratory of Mould Technology, Institute of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2011-09-01

    To increase the SiC content in Cr-based coatings, Cr-Al{sub 2}O{sub 3}/SiC composite coatings were plated in Cr(VI) baths which contained Al{sub 2}O{sub 3}-coated SiC powders. The Al{sub 2}O{sub 3}-coated SiC composite particles were synthesized by calcining the precursor prepared by heterogeneous deposition method. The transmission electron microscopy analysis of the particles showed that the nano-SiC particle was packaged by alumina. The zeta potential of the particles collected from the bath was up to +23 mV, a favorable condition for the co-deposition of the particles and chromium. Pulse current was used during the electrodeposition. Scanning Electron Microscopy (SEM) indicated that the coating was compact and combined well with the substrate. Energy dispersive X-ray analysis of Cr-Al{sub 2}O{sub 3}/SiC coatings demonstrated that the concentration of SiC in the coating reached about 2.5 wt.%. The corrosion behavior of the composite coating was studied by potentiodynamic polarization and electrochemical impedance spectroscopy techniques. The data obtained suggested that the Al{sub 2}O{sub 3}/SiC particles significantly enhanced the corrosion resistance of the composite coating in 0.05 M HCl solution.

  12. Fabrication and measurement of hoop strength of SiC triplex tube for nuclear fuel cladding applications

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Daejong, E-mail: dkim@kaeri.re.kr; Lee, Hyun-Geun; Park, Ji Yeon; Kim, Weon-Ju

    2015-03-15

    The SiC ceramics are under investigation for the fuel cladding in the light water nuclear reactors because of its excellent high temperature strength and corrosion resistance against hot steam under the severe accident conditions. In this study, the SiC triplex tubes consisting of a SiC inner layer, a SiC/PyC/SiC intermediate layer, and a SiC outer layer were fabricated by the chemical vapor processes. The hoop strength and fracture behaviors of the SiC triplex tube were investigated. The SiC triplex tubes fabricated at the high ratio of H{sub 2}/MTS had a quite high average strength with a relatively small standard deviation. The hoop strength of the composite tubes tends to increase with the volume fraction of the reinforced fibers. The highest fiber volume fraction was obtained using Tyranno SA3-0.8k with the dense winding patterns such as bamboo-like mosaic pattern, which resulted in the high hoop strength compared to other fibers of Tyranno SA3-1.6k and Hi-Nicalon Type S. Hoop strength also increased slightly as the winding angle increased from 45° to 65°. Fracture behaviors of the SiC triplex tube were investigated via the observation of microstructure of the failed samples.

  13. Diffusion of fission products and radiation damage in SiC

    Science.gov (United States)

    Malherbe, Johan B.

    2013-11-01

    A major problem with most of the present nuclear reactors is their safety in terms of the release of radioactivity into the environment during accidents. In some of the future nuclear reactor designs, i.e. Generation IV reactors, the fuel is in the form of coated spherical particles, i.e. TRISO (acronym for triple coated isotropic) particles. The main function of these coating layers is to act as diffusion barriers for radioactive fission products, thereby keeping these fission products within the fuel particles, even under accident conditions. The most important coating layer is composed of polycrystalline 3C-SiC. This paper reviews the diffusion of the important fission products (silver, caesium, iodine and strontium) in SiC. Because radiation damage can induce and enhance diffusion, the paper also briefly reviews damage created by energetic neutrons and ions at elevated temperatures, i.e. the temperatures at which the modern reactors will operate, and the annealing of the damage. The interaction between SiC and some fission products (such as Pd and I) is also briefly discussed. As shown, one of the key advantages of SiC is its radiation hardness at elevated temperatures, i.e. SiC is not amorphized by neutrons or bombardment at substrate temperatures above 350 °C. Based on the diffusion coefficients of the fission products considered, the review shows that at the normal operating temperatures of these new reactors (i.e. less than 950 °C) the SiC coating layer is a good diffusion barrier for these fission products. However, at higher temperatures the design of the coated particles needs to be adapted, possibly by adding a thin layer of ZrC.

  14. Construction Progress of the S-IC Test Stand-Excavation

    Science.gov (United States)

    1961-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In this photo, taken July 13, 1961, progress is made with the excavation and preparation of the S-IC test stand site.

  15. Investigations of Ar ion irradiation effects on nanocrystalline SiC thin films

    Energy Technology Data Exchange (ETDEWEB)

    Craciun, V., E-mail: valentin.craciun@inflpr.ro [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania); Craciun, D.; Socol, G. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania); Behdad, S.; Boesl, B. [Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174 (United States); Himcinschi, C. [Institute of Theoretical Physics, TU Bergakademie Freiberg, Freiberg (Germany); Makino, H. [Research Institute, Kochi University of Technology, Kami, Kochi 782-8502 (Japan); Socol, M. [National Institute for Materials Physics, Bucharest-Magurele (Romania); Simeone, D. [CEA/DEN/DANS/DM2S/SRMA/LA2M-LRC CARMEN CEN, Saclay (France); CNRS/SPMS UMR8785 LRC CARMEN, Ecole Centrale de Paris, 92292 Chatenay Malabry (France)

    2016-06-30

    Highlights: • Thin polycrystalline SiC films grown by the pulsed laser deposition technique were irradiated by 800 keV Ar ions at a dose of 2.6 × 10{sup 14} at/cm{sup 2}. • The SiC films hardness and Young modulus values significantly decreased after irradiation. • Glancing X-ray diffraction investigations showed a partial transformation of the SiC hexagonal phase into the cubic phase. • Smooth PLD grown thin films are excellent for radiation effects investigations using XRR, GIXRD and nanoindentation techniques. - Abstract: The effects of 800 keV Ar ion irradiation on thin nanocrystalline SiC films grown on (100) Si substrates using the pulsed laser deposition (PLD) technique were investigated. On such PLD grown films, which were very dense, flat and smooth, X-ray reflectivity, glancing incidence X-ray diffraction and nanoindentation investigations were easily performed to evaluate changes induced by irradiation on the density, surface roughness, crystalline structure, and mechanical properties. Results indicated that the SiC films retained their crystalline nature, the cubic phase partially transforming into the hexagonal phase, which had a slightly higher lattice parameter then the as-deposited films. Simulations of X-ray reflectivity curves indicated a 3% decrease of the films density after irradiation. Nanoindentation results showed a significant decrease of the hardness and Young's modulus values with respect to those measured on as-deposited films. Raman and X-ray photoelectron spectroscopy investigations found an increase of the C−C bonds and a corresponding decrease of the Si−C bonds in the irradiated area, which could explain the degradation of mechanical properties.

  16. Superior-subordinate relations as organizational processes

    DEFF Research Database (Denmark)

    Asmuss, Birte; Aggerholm, Helle Kryger; Oshima, Sae

    Since the emergence of the practice turn in social sciences (Golsorkhi et al. 2010), studies have shown a number of institutionally relevant aspects as achievements across time and by means of various resources (human and non-human) (Taylor & van Every 2000, Cooren et al. 2006). Such a process view...... on organizational practices relates closely to an increased focus on communication as being constitutive of the organization in general and the superior-subordinate relationship in specific. The current study aims to contribute to this line of research by investigating micro-practices involved in establishing...... superior-subordinate relations in a specific institutionalized setting: performance appraisal interviews (PAIs). While one main task of PAIs is to manage and integrate organizational and employee performance (Fletcher, 2001:473), PAIs are also organizational practices where superior-subordinate relations...

  17. Lake Superior Aquatic Invasive Species Complete Prevention Plan

    Science.gov (United States)

    The Lake Superior Aquatic Invasive Species Complete Prevention Plan is an expression of the best professional judgment of the members of the Lake Superior Task Force as to what is necessary to protect Lake Superior from new aquatic invasive species.

  18. Corrosion and wear behavior of functionally graded Al2024/SiC composites produced by hot pressing and consolidation

    Energy Technology Data Exchange (ETDEWEB)

    Erdemir, Fatih; Canakci, Aykut, E-mail: aykut@ktu.edu.tr; Varol, Temel; Ozkaya, Serdar

    2015-09-25

    Highlights: • Functionally graded Al2024/SiC composites were produced by hot pressing. • Effect of the number of graded layers was investigated on the corrosion behavior. • Functionally graded composites has the most corrosion resistant than composites. • Wear mechanisms of Al2024/SiC composites were explained. - Abstract: Functionally graded Al2024/SiC composites (FGMs) with varying percentage of SiC (30–60%) were produced by hot pressing and consolidation method. The effects of SiC content and number of layers of Al2024/SiC FGMs on the corrosion and wear behaviors were investigated. The microstructures of these composites were characterized by a scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS). The corrosion performances of composites were evaluated by potentiodynamic polarization scans in 3.5% NaCl solution. Corrosion experiments shows that corrosion rate (1109 mpy) of two layered FGMs which containing 50 wt.% SiC were much higher than Al2024 matrix (2569 mpy) and Al2024/50 wt.% SiC composite (2201 mpy). Mechanical properties of these composites were evaluated by microhardness measurements and ball-on-disk wear tests. As the applied load change from 15 to 20 N, the wear rates of the Al2024 increased significantly and wear mechanism transformed from mild to severe wear regime. It has been shown that Al2024/40 wt.% SiC composite has lower wear rate where adhesive and abrasive wear mechanisms play a major role.

  19. Improving the tribological performances of graphite-like carbon films on Si{sub 3}N{sub 4} and SiC by using Si interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yongxin [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Science, Lanzhou 730000 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100039 (China); Wang Liping, E-mail: lpwang@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Science, Lanzhou 730000 (China); Xue Qunji [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Science, Lanzhou 730000 (China)

    2011-09-15

    Si interlayers were used to obtain the excellent tribological performances of graphite-like carbon (GLC) film on silicon nitride (Si{sub 3}N{sub 4}) and silicon carbide (SiC). The microstructure and mechanical characteristics of the as-prepared GLC films with Si interlayers were investigated by scanning electron microscopy, Raman spectroscopy, nanoindention and scratch test. The tribological behaviors of GLC-coated and uncoated Si{sub 3}N{sub 4} and SiC were comparatively studied by a ball-on-disc tribo-meter in both dry and water environments. Results showed that the Si interlayers were dense and bonded well with both the substrates and GLC layers. The as-prepared GLC films exhibited excellent tribological performances in both dry and water environments. More importantly, the stably mild wear without any delamination was obtained in water by using Si interlayer. The mechanisms of friction reduction and anti-wear performances of GLC films on the two ceramics with Si interlayers under different environmental conditions were discussed, as well as the corresponding models were deduced.

  20. Endovascular treatment of superior vena cava syndrome

    DEFF Research Database (Denmark)

    Duvnjak, Stevo; Andersen, Poul Erik

    2011-01-01

    Abstract AIM: The aim of this study was to report our experience with palliative stent treatment of superior vena cava syndrome. METHODS: Between January 2008 and December 2009, 30 patients (mean age 60.7 years) were treated with stents because of stenosed superior vena cava. All patients presented...... there was an immediate clinical improvement with considerable reduction in the edema of upper extremities and head. There was, however, continous dyspnea in five patients (17%) and two patients (7%) had persistent visible collateral venous circulations on the upper chest. There were no stent associated complications...